National Library of Energy BETA

Sample records for thin-film solar cell

  1. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    microcrystalline silicon thin films and solar cells. Journalof a p-i-n thin-film solar cell with front transparent con-microcrystalline silicon thin film solar cells. Solar Energy

  2. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    of a p-i-n thin-film solar cell with front transparent con-for thin-film a-si:h solar cells. Progress in Photovoltaics,in thin-film silicon solar cells. Optics Communications,

  3. Material Development for Highly Processable Thin Film Solar Cells

    E-Print Network [OSTI]

    Bob, Brion

    2014-01-01

    Structuring of Thin-film Solar Cells with a Single Laser1. Background on Thin Film Solar Cells and TransparentCuIn(Se,S)2 thin film solar cells: Secondary phases and

  4. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    to High-Efficiency CZTSSe Thin-film Solar Cells, Proc. IEEEMetal chalcogenide-based thin film solar cells are currentlyof metal chalcogenide thin film solar cells A dissertation

  5. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    Solar Energy Materials and Solar Cells, 86:207–216, 2005. [silicon thin films and solar cells. Journal of Appliedof a p-i-n thin-film solar cell with front transparent con-

  6. Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics

    E-Print Network [OSTI]

    Chung, Choong-Heui

    2012-01-01

    CuIn(Se,S) 2 thin film solar cells: secondary phaseChalcopyrite Thin Film Solar Cells: Materials Chemistry,Chalcopyrite Thin Film Solar Cells: Materials Chemistry,

  7. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    Solar Energy Materials and Solar Cells, 86:207–216, 2005. [silicon thin films and solar cells. Journal of Appliedtrapping in nanostructured solar cells. ACS Nano, 5:10055–

  8. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    for further improvement on CZTS solar cells efficiency.improvement. Figure 6.1 Efficiency progress for hydrazine solution processing CIGS and CZTS thin film solar cells

  9. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    modeling of ? -Si : H solar cells with rough interfaces:of a p-i-n thin-film solar cell with front transparent con-amorphous-silicon-based P-I-N solar cells deposited on rough

  10. Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells

    E-Print Network [OSTI]

    Deceglie, Michael G.

    2014-01-01

    in ultrathin plasmonic solar cells," Optics Express, vol.Bailat, "Thin-film silicon solar cell technology," Progresstrapping in silicon thin film solar cells," Solar Energy,

  11. Band Gap Energy of Chalcopyrite Thin Film Solar Cell Absorbers Determined by Soft X-Ray Emission and Absorption Spectroscopy

    E-Print Network [OSTI]

    Bar, M.

    2010-01-01

    OF CHALCOPYRITE THIN FILM SOLAR CELL ABSORBERS DETERMINED BYchalcopyrite thin film solar cell absorbers significantlyof chalcopyrite thin film solar cell absorbers. excitation

  12. Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells

    E-Print Network [OSTI]

    Deceglie, Michael G.

    2014-01-01

    trapping in silicon thin film solar cells," Solar Energy,textured surfaces in thin-film solar cells," Opt. Express,Design of Plasmonic Thin-Film Solar Cells with Broadband

  13. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    S. Guha, High-Efficiency Cu2ZnSnSe4 Solar Cells with a TiNfurther improvement on CZTS solar cells efficiency. Finally,Route to High-Efficiency CZTSSe Thin-film Solar Cells, Proc.

  14. Polycrystalline Thin-Film Multijunction Solar Cells

    SciTech Connect (OSTI)

    Noufi, R.; Wu, X.; Abu-Shama, J.; Ramanathan, K; Dhere, R.; Zhou, J.; Coutts, T.; Contreras, M.; Gessert, T.; Ward, J. S.

    2005-11-01

    We present a digest of our research on the thin-film material components that comprise the top and bottom cells of three different material systems and the tandem devices constructed from them.

  15. Efficient light trapping structure in thin film silicon solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

  16. Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells

    E-Print Network [OSTI]

    Deceglie, Michael G.

    2014-01-01

    W. Prather, "Thin film solar cell design based on photonicH. A. Atwater, "Design of nanostructured solar cells usingBrongersma, "Design of Plasmonic Thin-Film Solar Cells with

  17. Polycrystalline Thin Film Solar Cell Technologies: Preprint

    SciTech Connect (OSTI)

    Ullal, H. S.

    2008-12-01

    Rapid progress is being made by CdTe and CIGS-based thin-film PV technologies in entering commercial markets.

  18. Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell

    E-Print Network [OSTI]

    Li, Tong; Jiang, Chun

    2010-01-01

    We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

  19. DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS-FILM SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

  20. Dielectric back scattering patterns for light trapping in thin-film Si solar cells

    E-Print Network [OSTI]

    Polman, Albert

    Dielectric back scattering patterns for light trapping in thin-film Si solar cells M. van Lare,1 of dielectric and metallic backscattering patterns in thin-film a-Si:H solar cells. We compare devices for Light Trapping in Thin-Film Silicon Solar Cells", in Proceedings of the 23rd European Photovoltaic Solar

  1. LOSS ANALYSIS OF BACK-CONTACT BACK-JUNCTION THIN-FILM MONOCRYSTALLINE SILICON SOLAR CELLS

    E-Print Network [OSTI]

    LOSS ANALYSIS OF BACK-CONTACT BACK-JUNCTION THIN-FILM MONOCRYSTALLINE SILICON SOLAR CELLS F. Haase losses in back-contact back- junction monocrystalline thin-film silicon solar cells. The cells are made for back-contact back- junction (BC BJ) monocrystalline thin-film silicon solar cells using the PSI process

  2. Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells

    E-Print Network [OSTI]

    Pulfrey, David L.

    Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells D.L. Pulfrey*, J. Dell): pulfrey@ece.ubc.ca ABSTRACT Cadmium telluride thin-film solar cells are now commercially available be attainable. 1. INTRODUCTION Thin film solar cells based on polycrystalline CdTe have been investigated

  3. EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS

    E-Print Network [OSTI]

    Ceder, Gerbrand

    materials for thin film solar cells such as CdTe and CIGS suffer from concerns over resource scarcity (eEARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS Yun Seog Lee 1 conversion efficiencies should be increased. In terms of reducing module cost, thin film solar cells

  4. Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells

    E-Print Network [OSTI]

    Van Stryland, Eric

    Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells Qiumei Bian in the fabrication and assembly of thin film solar cells. Using a femtosecond (fs) laser, we selectively removed a unique scheme to ablate the indium tin-oxide layer for the fabrication of thin film solar cells

  5. Metal-black scattering centers to enhance light harvesting by thin-film solar cells

    E-Print Network [OSTI]

    Peale, Robert E.

    Metal-black scattering centers to enhance light harvesting by thin-film solar cells Deep Panjwania as scattering centers to increase the effective optical thickness of thin-film solar cells. The particular type. Gold-black was deposited on commercial thin-film solar cells using a thermal evaporator in nitrogen

  6. CARRIER COLLECTION IN THIN-FILM CDTE SOLAR CELLS: THEORY AND EXPERIMENT

    E-Print Network [OSTI]

    CARRIER COLLECTION IN THIN-FILM CDTE SOLAR CELLS: THEORY AND EXPERIMENT A.E. Delahoy, Z. Cheng different wavelengths. Keywords: CdTe, thin film solar cell, modeling 1 INTRODUCTION Traditional Si p, Jsc, is independent of voltage, i.e. superposition holds. Thin film CdTe solar cells deviate from

  7. Enhanced efficiency of thin film solar cells using a shifted dual grating plasmonic structure

    E-Print Network [OSTI]

    Levy, Uriel

    Enhanced efficiency of thin film solar cells using a shifted dual grating plasmonic structure Ronen, "Light absorption enhancement in thin-film solar cells using whispering gallery modes in dielectric in thin film solar cells," Appl. Phys. Lett. 99(13), 131114 (2011). 10. H. R. Stuart and D. G. Hall

  8. Light trapping in thin-film solar cells with randomly rough and hybrid

    E-Print Network [OSTI]

    Light trapping in thin-film solar cells with randomly rough and hybrid textures Piotr Kowalczewski. M. Smets, and M. Zeman, "Plasmonic light trapping in thin-film silicon solar cells with improved Lambertian limits in thin film silicon solar cells with 1D and 2D periodic patterns," Opt. Express 20, A224­A

  9. Engineering Gaussian disorder at rough interfaces for light trapping in thin-film solar cells

    E-Print Network [OSTI]

    Engineering Gaussian disorder at rough interfaces for light trapping in thin-film solar cells Piotr A theoretical study of randomly rough interfaces to obtain light trapping in thin-film silicon solar cells of thin-film solar cells. © 2012 Optical Society of America OCIS codes: 040.5350, 050.1950. Reducing

  10. Light trapping in thin-film solar cells via scattering by nanostructured antireflection coatings

    E-Print Network [OSTI]

    Yu, Edward T.

    Light trapping in thin-film solar cells via scattering by nanostructured antireflection coatings X://jap.aip.org/authors #12;Light trapping in thin-film solar cells via scattering by nanostructured antireflection coatings X of nanostructured TiO2 layers fabricated on thin-film solar cells to provide, simultaneously, both antireflection

  11. Mechanics of thin-film transistors and solar cells on flexible substrates

    E-Print Network [OSTI]

    Suo, Zhigang

    Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova a,*, I be minimized throughout the fab- rication process. Amorphous silicon thin-film transistors and solar cells rights reserved. Keywords: Amorphous silicon; Thin-film transistor; Solar cell; Flexible electronics 1

  12. Light trapping regimes in thin-film silicon solar cells with a photonic pattern

    E-Print Network [OSTI]

    Light trapping regimes in thin-film silicon solar cells with a photonic pattern Simone Zanotto a theoretical study of crystalline and amorphous silicon thin-film solar cells with a periodic pattern on a sub. Poortmans and V. Arkhipov (editors), Thin Film Solar Cells (Wiley, Chichester 2006). 4. P. W¨urfel, Physics

  13. BACK CONTACT MONOCRYSTALLINE THIN-FILM SILICON SOLAR CELLS FROM THE POROUS SILICON PROCESS

    E-Print Network [OSTI]

    BACK CONTACT MONOCRYSTALLINE THIN-FILM SILICON SOLAR CELLS FROM THE POROUS SILICON PROCESS F. Haase contact cells. Kraiem et al [7] made a back contact thin film monocrystalline solar cell with cell), Am Ohrberg 1, D-31860 Emmerthal, Germany ABSTRACT We develop a back contact monocrystalline thin-film

  14. ENGINEERED SUBSTRATES FOR THIN-FILM SOLAR CELLS: SCATTERING PROPERTIES OF 1D ROUGHNESS

    E-Print Network [OSTI]

    ENGINEERED SUBSTRATES FOR THIN-FILM SOLAR CELLS: SCATTERING PROPERTIES OF 1D ROUGHNESS S. Del Sorbo, Optical Properties, Substrates, Texturisation, Thin Film Solar Cells 1 MOTIVATION OF THIS WORK The aim of thin film technology is to reduce both the electrical transport losses in the bulk region of a solar

  15. LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle

    E-Print Network [OSTI]

    Sites, James R.

    LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle Physics response map, was developed and used to map defects in thin-film solar cells [4]. Improvements to the two) measurements are providing a direct link between the spatial non-uniformities inherent in thin-film

  16. High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing

    E-Print Network [OSTI]

    Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

    2008-01-01

    One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

  17. Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)

    SciTech Connect (OSTI)

    Gessert, T. A.

    2010-09-01

    Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

  18. DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important contributor to the global energy demand by the mid-21st-century. Cu(In,Ga)Se2 (CIGS) solar cells, which haveDISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler

  19. Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell

    E-Print Network [OSTI]

    Grandidier, Jonathan

    Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell J. Grandidier photocurrent of the solar cell. On a typical thin film amorphous silicon solar cell, a parametric analysis of SiO2 spheres directly placed on top of a-Si [1] and gallium arsenide (GaAs) [3] solar cells. We

  20. Thin film solar cell including a spatially modulated intrinsic layer

    DOE Patents [OSTI]

    Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

    1989-03-28

    One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

  1. Methods for fabricating thin film III-V compound solar cell

    DOE Patents [OSTI]

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  2. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    151 Two-stage thin film deposition process15 Description of thin film depositionProcess Model . . . . 54 Porous Thin-Film Deposition Process

  3. Dual gratings for enhanced light trapping in thin-film solar cells

    E-Print Network [OSTI]

    Dual gratings for enhanced light trapping in thin-film solar cells by a layer-transfer technique, Ireland * christian.schuster@york.ac.uk Abstract: Thin film solar cells benefit significantly from, "Progress and outlook for high-efficiency crystalline silicon solar cells," Sol. Energy Mater. Sol. Cells 65

  4. p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells

    E-Print Network [OSTI]

    p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells Ken K. Chin n substitution of Cd CuCd 0=À #12; #12; play critical roles in p-doping of CdTe in CdS/CdTe thin film solar cells in Fig. 1. As for the CdTe polycrystalline thin film in a CdS/CdTe solar cell, it is still being debated

  5. Focused ion beam specimen preparation for electron holography of electrically biased thin film solar cells

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    solar cells M. Duchamp1 , M. den Hertog2 , R. Imlau1 , C. B. Boothroyd1 , A. Kovács1 , A. H. Tavabi1, biased TEM specimen, thin film solar cell, FIB Thin films of hydrogenated Si (Si:H) can be used as active absorber layers in solar cells deposited on low cost substrates using plasma-enhanced chemical vapour

  6. Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell

    E-Print Network [OSTI]

    to bring down the cost of photovoltaic (PV) solar cells has gained huge momentum, and many strategiesOptimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic

  7. DISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS AND MODULES WITH 2-D-FILM SOLAR CELLS AND MODULES WITH 2-D SIMULATIONS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS-UNIFORMITIES ON THIN-FILM SOLAR CELLS AND MODULES WITH 2-D SIMULATIONS Clean and environmentally friendly photovoltaic

  8. Photonic light trapping and electrical transport in thin-film silicon solar cells

    E-Print Network [OSTI]

    Photonic light trapping and electrical transport in thin-film silicon solar cells Lucio Claudio Keywords: Thin-film solar cells Light trapping Photonic structures Carrier collection Electro-optical simulations Surface recombination a b s t r a c t Efficient solar cells require both strong absorption

  9. METAL BLACKS AS SCATTERING CENTERS TO INCREASE THE EFFICIENCY OF THIN FILM SOLAR CELLS

    E-Print Network [OSTI]

    Peale, Robert E.

    METAL BLACKS AS SCATTERING CENTERS TO INCREASE THE EFFICIENCY OF THIN FILM SOLAR CELLS by DEEP R surface of thin-film solar cells to improve efficiency. The principle is that scattering, which film solar cell. The particular types of particles investigated here are known as "metal-black", well

  10. Thin film cadmium telluride and zinc phosphide solar cells

    SciTech Connect (OSTI)

    Chu, T.

    1984-10-01

    This report describes research performed from June 1982 to October 1983 on the deposition of cadmium telluride films by direct combination of the cadmium and tellurium vapor on foreign substrates. Nearly stoichiometric p-type cadmium telluride films and arsenic-doped p-type films have been prepared reproducibly. Major efforts were directed to the deposition and characterization of heterojunction window materials, indium tin oxide, fluorine-doped tin oxide, cadmium oxide, and zinc oxide. A number of heterojunction solar cells were prepared, and the best thin-film ITO/CdTe solar cells had an AMl efficiency of about 7.2%. Zinc phosphide films were deposited on W/steel substrates by the reaction of zinc and phosphine in a hydrogen flow. Films without intentional doping had an electrical resistivity on the order of 10/sup 6/ ohm-cm, and this resistivity may be reduced to about 5 x 10/sup 4/ ohm-cm by adding hydrogen chloride or hydrogen bromide to the reaction mixture. Lower resistivity films were deposited by adding a controlled amount of silver nitrate solution on to the substrate surface. Major efforts were directed to the deposition of low-resistivity zinc selenide in order to prepare ZnSe/An/sub 3/P/sub 2/ heterojunction thin-film solar cells. However, zinc selenide films deposited by vacuum evaporation and chemical vapor deposition techniques were all of high resistivity.

  11. Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells

    E-Print Network [OSTI]

    Fan, Shanhui

    Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells Nicholas P of solar energy conversion be- cause they use thin films of photoactive material and can be manufactured and photocurrent in flexible organic solar cells. We demonstrate that this enhancement is attributed to a broadband

  12. Studies of thin film hydrogenated silicon solar cells using electron energy-loss spectroscopy in the transmission electron microscope

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    Studies of thin film hydrogenated silicon solar cells using electron energy-loss spectroscopy (TEM) to study n-i-p thin film Si solar cells grown on steel foil or glass substrates. For a solar cell experiment, we study the chemical compositions of defective regions in thin film Si solar cells using energy

  13. Computational analysis of thin film InGaAs/GaAs quantum well solar cells with

    E-Print Network [OSTI]

    Yu, Edward T.

    Computational analysis of thin film InGaAs/GaAs quantum well solar cells with back side light, Austin, TX 78758, USA * ety@ece.utexas.edu Abstract: Simulations of thin film (~2.5 µm thick) InGaAs/GaAs. Roberts, G. Hill, and C. Calder, "Progress in quantum well solar cells," Thin Solid Films 511­512, 76

  14. Semiconductor heterostructures and optimization of light-trapping structures for efficient thin-film solar cells

    E-Print Network [OSTI]

    Yu, Edward T.

    and optimization of light-trapping structures for efficient thin-film solar cells Claiborne O McPheeters1 , Dongzhi elements are integrated for light trapping. Measurements and simulations of GaAs solar cells with less than in their performance. Keywords: quantum-well, quantum-dot, scattering, diffraction, thin-film, GaAs, InAs, photovoltaic

  15. Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a

    E-Print Network [OSTI]

    Alam, Muhammad A.

    Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a J. D. Servaites thin-film solar cell types: hydrogenated amorphous silicon a-Si:H p-i-n cells, organic bulk understanding of thin film solar cell device physics, including important module performance variability issues

  16. Improved red-response in thin film a-Si:H solar cells with soft-imprinted plasmonic back reflectors

    E-Print Network [OSTI]

    Polman, Albert

    Improved red-response in thin film a-Si:H solar cells with soft-imprinted plasmonic back reflectors is a critical component of solar cell development. In typical thin film cells the thickness of the absorbing of photovoltaic power. Thin film Si solar cells using hydrogenated amorphous Si a-Si:H and nano- crystalline Si nc

  17. High Efficiency Thin Film CdTe and a-Si Based Solar Cells Annual Technical Report for the Period

    E-Print Network [OSTI]

    Deng, Xunming

    High Efficiency Thin Film CdTe and a-Si Based Solar Cells Annual Technical Report for the Period This report covers the second year of this subcontract for research on high efficiency CdTe-based thin-film solar cells and on high efficiency a-Si-based thin-film solar cells. The effort on CdTe- based materials

  18. Mode coupling by plasmonic surface scatterers in thin-film silicon solar cells M. van Lare,1

    E-Print Network [OSTI]

    Polman, Albert

    Mode coupling by plasmonic surface scatterers in thin-film silicon solar cells M. van Lare,1 F a completed thin-film a-Si:H solar cell. Current-voltage measurements show a photocurrent enhancement of 10 of Physics. [http://dx.doi.org/10.1063/1.4767997] Thin-film solar cells offer the potential of high photovol

  19. CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION

    E-Print Network [OSTI]

    CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for manufacturing high efficiency silicon thin-film solar cells. Industrially feasible epitaxy systems therefore

  20. Transparent electrode requirements for thin film solar cell modules Michael W. Rowell and Michael D. McGehee*

    E-Print Network [OSTI]

    McGehee, Michael

    Transparent electrode requirements for thin film solar cell modules Michael W. Rowell and Michael D The transparent conductor (TC) layer in thin film solar cell modules has a significant impact on the power to replace conducting oxides in this geometry. Thin film solar cell modules can be manufactured either

  1. Enhancement of optical absorption in thin-film organic solar cells through the excitation of plasmonic modes in metallic gratings

    E-Print Network [OSTI]

    Fan, Shanhui

    Enhancement of optical absorption in thin-film organic solar cells through the excitation.1063/1.3377791 Thin-film organic solar cells OSCs are a promising candidate for low-cost energy conversion.1­6 However 2010 We theoretically investigate the enhancement of optical absorption in thin-film organic solar

  2. Anti-reflection zinc oxide nanocones for higher efficiency thin-film silicon solar cells

    E-Print Network [OSTI]

    Mailoa, Jonathan P

    2012-01-01

    Thin film silicon solar cells, which are commonly made from microcrystalline silicon ([mu]c-Si) or amorphous silicon (a-Si), have been considered inexpensive alternatives to thick polycrystalline silicon (polysilicon) solar ...

  3. Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer 

    E-Print Network [OSTI]

    Lu, Tianlin

    2012-07-16

    Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric ...

  4. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    properties,” Solar Energy Materials and Solar Cells, vol.G. Dhere, Solar Energy Materials and Solar Cells 2006 , 90,devices, Solar Energy Materials and Solar Cells (2012), doi:

  5. TRANSMISSION ELECTRON MICROSCOPY OF THE TEXTURED SILVER BACK REFLECTOR OF A THIN FILM SILICON SOLAR CELL: FROM CRYSTALLOGRAPHY TO OPTICAL ABSORPTION

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    in amorphous, microcrystalline and micromorph thin-film Si solar cells is an important and active field-reflector of thin-film Si solar cells. 1 INTRODUCTION The study of light trapping in thin-film Si solar cells for an optimized back reflector structure in a microcrystalline thin film Si solar cell, when compared with the use

  6. Earth abundant materials for high efficiency heterojunction thin film solar cells

    E-Print Network [OSTI]

    Buonassisi, Tonio

    We investigate earth abundant materials for thin-film solar cells that can meet tens of terawatts level deployment potential. Candidate materials are identified by combinatorial search, large-scale electronic structure ...

  7. Integrated photonic structures for light trapping in thin-film Si solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

  8. CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and...

    Office of Scientific and Technical Information (OSTI)

    No. DE-AC36-99-GO10337 Conference Paper NRELCP-520-37020 January 2005 CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments K. Ramanathan, R.N....

  9. Efficiency calculations of thin-film GaAs solar cells on Si substrates

    SciTech Connect (OSTI)

    Yamaguchi, M.; Amano, C.

    1985-11-01

    Dislocation effect upon the efficiency of single-crystal thin-film AlGaAs-GaAs heteroface solar cells on Si substrates is analyzed. Solar-cell properties are calculated based on a simple model; in the model, dislocations act as recombination centers to reduce the minority-carrier diffusion length in each layer and increase the space-charge layer recombination current. Numerical analysis is also carried out to optimize thin-film AlGaAs-GaAs heteroface solar-cell structures. The fabrication of thin-film AlGaAs-GaAs heteroface solar cells with a practical efficiency larger than 18% on Si substrates appears possible if the dislocation density in the thin-film GaAs layer is less than 10/sup 6/ cm/sup -2/.

  10. A Review of Thin Film Crystalline Silicon for Solar Cell Applications. Part 1 : Native Substrates.

    E-Print Network [OSTI]

    . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 5.5 Epilift process - Centre for Sustainable Energy Systems, ANU Systems Engineering Department, The Australian National University, ACT 0200, Australia. Email : michelleA Review of Thin Film Crystalline Silicon for Solar Cell Applications. Part 1 : Native Substrates

  11. Technological assessment of light-trapping technology for thin-film Si solar cell

    E-Print Network [OSTI]

    Susantyoko, Rahmat Agung

    2009-01-01

    The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was analyzed from the technology, market, and ...

  12. Volumetric plasmonic resonator architecture for thin-film solar cells Mustafa Akin Sefunc,a

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Volumetric plasmonic resonator architecture for thin-film solar cells Mustafa Akin Sefunc,a Ali; published online 4 March 2011 We propose and demonstrate a design concept of volumetric plasmonic resonators

  13. Identification, Characterization, and Implications of Shadow Degradation in Thin Film Solar Cells

    E-Print Network [OSTI]

    Alam, Muhammad A.

    cells [4]. The problem of shadowing of solar panels has been studied for quite some time; however of a solar cell, showing the dark and light current components. (b) The series connection in a solar panelIdentification, Characterization, and Implications of Shadow Degradation in Thin Film Solar Cells

  14. High Efficiency Thin Film CdTe and a-Si Based Solar Cells Final Technical Report for the Period

    E-Print Network [OSTI]

    Deng, Xunming

    High Efficiency Thin Film CdTe and a-Si Based Solar Cells Final Technical Report for the PeriodTe-based thin-film solar cells and on high efficiency a-Si-based thin-film solar cells. Phases I and II have-SiGe bottom cells. · Studied the sputter deposition of ITO films for the top electrode on a-Si cells and found

  15. Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells

    E-Print Network [OSTI]

    Rockett, Angus

    Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A conversion efficiency of solar cells made from this material [1]. One of the special qualities of the CIGS improve the solar cell performance. In many of the different CIGS fabrication techniques, an in depth

  16. Extended light scattering model incorporating coherence for thin-film silicon solar cells

    E-Print Network [OSTI]

    Lenstra, Arjen K.

    Extended light scattering model incorporating coherence for thin-film silicon solar cells Thomas film solar cells. The model integrates coherent light propagation in thin layers with a direct, non efficiency spectra of state-of-the-art microcrystalline silicon solar cells. The simulations agree very well

  17. LAYER TRANSFER OF LARGE AREA MACROPOROUS SILICON FOR MONOCRYSTALLINE THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    LAYER TRANSFER OF LARGE AREA MACROPOROUS SILICON FOR MONOCRYSTALLINE THIN-FILM SOLAR CELLS Marco-based solar cells is approximately 200 µm with a kerf loss of about 100 µm caused by wire sawing. However, lower wafer thicknesses are sufficient for achieving high solar cell efficiencies exceeding 20 % [1

  18. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    Solar Energy Materials and Solar Cells 2006 , 90, 2181–Solar Energy Materials and Solar Cells, vol. 95, no. 8, pp.Energy Materials and Solar Cells (2012), doi:10.1016/j.

  19. Photon-Electron Harvesting in Thin-Film Flexible Solar Cells

    E-Print Network [OSTI]

    Wu, Shin-Tson

    ) Dr. Debashis Chanda's Group Cost effective and high efficiency solar cells are important in orderPhoton-Electron Harvesting in Thin-Film Flexible Solar Cells Javaneh Boroumand (12:00 PM ­ 12:30 PM-crystalline silicon (c- Si) remained number one material of choice for harnessing solar energy due to natural

  20. Nitrogen-doped cuprous oxide as a p-type hole-transporting layer in thin-film solar cells

    E-Print Network [OSTI]

    Nitrogen-doped cuprous oxide as a p-type hole- transporting layer in thin-film solar cells Yun Seog-transparent tunnel junction to a back-contact. We fabricate Cu2O-based heterojunction thin-film solar cells-factor and power conversion efficiency of the solar cells. Cu2O:N thin-films may also be useful in other

  1. Sputtered Molybdenum Bilayer Back Contact for Copper Indium Diselenide-Based Polycrystalline Thin-Film Solar Cells

    E-Print Network [OSTI]

    Scofield, John H.

    -of-the-art polycrystalline copper indium gallium diselenide solar cells with good results. Thin Solid Films, 260 (1), pp. 26), have emerged as promising polycrystalline thin-film semiconductors for solar cell absorber layers.2 polycrystalline thin-film photovoltaic (PV) technology. 3 Solar cells fabricated at the National Renewable Energy

  2. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    Energy Materials and Solar Cells (2012), doi:10.1016/j.Solar Energy Materials and Solar Cells 2012, [4-4] Q. Guo,Energy Materials and Solar Cells 2011, 95, 1421–1436. [4-18

  3. Efficiency considerations for polycrystalline GaAs thin-film solar cells

    SciTech Connect (OSTI)

    Yamaguchi, M.; Itoh, Y.

    1986-07-01

    The effect of grain boundaries upon the efficiency of polycrystalline GaAs thin-film solar cells is analyzed. Solar-cell properties are calculated on a simple model where grain boundaries act as recombination centers to reduce the minority-carrier diffusion length in the solar cell's active layer and increase the space-charge layer recombination current. An effective diffusion length is expressed in terms of grain size, allowing the calculation of short-circuit current density and open-circuit voltage. Excellent agreement is obtained between theory and experiment. The fabrication of thin-film GaAs solar cells with an efficiency greater than 18% appears to be possible if the grain size in the thin-film GaAs layer with thickness of 3 ..mu..m is larger than 1000 ..mu..m.

  4. Enhanced Efficiency of Light-Trapping Nanoantenna Arrays for Thin Film Solar Cells

    E-Print Network [OSTI]

    Simovski, Constantin R; Voroshilov, Pavel M; Guzhva, Michael E; Belov, Pavel A; Kivshar, Yuri S

    2013-01-01

    We suggest a novel concept of efficient light-trapping structures for thin-film solar cells based on arrays of planar nanoantennas operating far from plasmonic resonances. The operation principle of our structures relies on the excitation of chessboard-like collective modes of the nanoantenna arrays with the field localized between the neighboring metal elements. We demonstrated theoretically substantial enhancement of solar-cell short-circuit current by the designed light-trapping structure in the whole spectrum range of the solar-cell operation compared to conventional structures employing anti-reflecting coating. Our approach provides a general background for a design of different types of efficient broadband light-trapping structures for thin-film solar-cell technologically compatible with large-area thin-film fabrication techniques.

  5. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    Processed Cu(In,Ga)(Se,S)2 Solar Cells,” Advanced Energyfor solution processed CuInSxSe2?x solar cells and itson defect properties,” Solar Energy Materials and Solar

  6. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    Cu(In,Ga)(Se,S)2 Solar Cells,” Advanced Energy Materials,processed CuInSxSe2?x solar cells and its effect on defectEnergy Materials and Solar Cells, vol. 95, no. 8, pp. 2384–

  7. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    3-6,3-7] Chalcopyrite CIGS solar cells, without introducingperformance CISS and CIGS solar cells with efficiencies uptellurium might impede CIGS/CdTe solar cells from reaching

  8. Material Development for Highly Processable Thin Film Solar Cells

    E-Print Network [OSTI]

    Bob, Brion

    2014-01-01

    H. Sudibyo, and D. Hartanto, in Solar Cells - Research andon the Cu 2 (Zn,Sn)Se 4 solar cells open-circuit voltage. ”on the Cu 2 (Zn,Sn)Se 4 solar cells open-circuit voltage. ”

  9. HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa

    E-Print Network [OSTI]

    Romeo, Alessandro

    HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa , Alessio in the fabrication of high efficiency CdTe/CdS thin film solar cells. Usually, it is done first by etching the CdTe/CdS structure causing shunt paths by segregating into the grain boundaries or lowering the cell efficiency

  10. Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells. de Bariloche, Argentina 3 ECN Solar Energy, High Tech Campus, Building 5, 5656 AE Eindhoven energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar

  11. NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-09-01

    Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

  12. Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations

    E-Print Network [OSTI]

    important evaluation criterion for photovoltaic (PV) technology. Therefore, research on novel structuresTowards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping February 2014; published online 3 March 2014) Thin-film solar cells based on silicon have emerged

  13. Light trapping and electrical transport in thin-film solar cells with randomly rough Piotr Kowalczewski, Angelo Bozzola, Marco Liscidini, and Lucio Claudio Andreani

    E-Print Network [OSTI]

    Light trapping and electrical transport in thin-film solar cells with randomly rough textures Piotr solar cells J. Appl. Phys. 105, 094511 (2009); 10.1063/1.3108689 Local versus global absorption in thin-film in thin-film solar cells with randomly rough textures Piotr Kowalczewski,a) Angelo Bozzola, Marco

  14. Response to "Comment on `Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations'" [J. Appl. Phys. 117,

    E-Print Network [OSTI]

    Response to "Comment on `Towards high efficiency thin-film crystalline silicon solar cells high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non.1063/1.4905182 Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non

  15. Bandgap-Graded Cu2Zn(Sn1-xGex)S4 Thin-Film Solar Cells Derived from Metal Chalcogenide Complex Ligand Capped Nanocrystals

    E-Print Network [OSTI]

    Cao, Guozhong

    Bandgap-Graded Cu2Zn(Sn1-xGex)S4 Thin-Film Solar Cells Derived from Metal Chalcogenide ComplexS) thin-film solar cells based on metal chalcogenide complex (MCC) ligand capped nanocrystals (NCs attention as a promising absorber material in thin film-solar cells due to its abundance and nontoxicity

  16. DISORDER ENGINEERING FOR LIGHT-TRAPPING IN THIN-FILM SOLAR CELLS P. Kowalczewski, M. Liscidini, and L.C. Andreani

    E-Print Network [OSTI]

    DISORDER ENGINEERING FOR LIGHT-TRAPPING IN THIN-FILM SOLAR CELLS P. Kowalczewski, M. Liscidini: In this work we focus on randomly rough textures for light-trapping in thin-film silicon solar cells. We use light management is a key to achieve high efficiency thin-film solar cells, and a wide variety of light

  17. Low cost and high performance light trapping structure for thin-film solar cells

    E-Print Network [OSTI]

    Wang, DongLin; Su, Gang

    2015-01-01

    Nano-scaled dielectric and metallic structures are popular light tapping structures in thin-film solar cells. However, a large parasitic absorption in those structures is unavoidable. Most schemes based on such structures also involve the textured active layers that may bring undesirable degradation of the material quality. Here we propose a novel and cheap light trapping structure based on the prism structured SiO2 for thin-film solar cells, and a flat active layer is introduced purposefully. Such a light trapping structure is imposed by the geometrical shape optimization to gain the best optical benefit. By examining our scheme, it is disclosed that the conversion efficiency of the flat a-Si:H thin-film solar cell can be promoted to exceed the currently certified highest value. As the cost of SiO2-based light trapping structure is much cheaper and easier to fabricate than other materials, this proposal would have essential impact and wide applications in thin-film solar cells.

  18. Method of forming particulate materials for thin-film solar cells

    DOE Patents [OSTI]

    Eberspacher, Chris; Pauls, Karen Lea

    2004-11-23

    A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

  19. Novel wide band gap materials for highly efficient thin film tandem solar cells

    SciTech Connect (OSTI)

    Brian E. Hardin, Stephen T. Connor, Craig H. Peters

    2012-06-11

    Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PV�s goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a mixture of solution and physical vapor deposition processing, but these films lacked the p-type doping levels that are required to make decent solar cells. Over the course of the project PLANT PV was able to fabricate efficient CIGS solar cells (8.7%) but could not achieve equivalent performance using AIGS. During the nine-month grant PLANT PV set up a variety of thin film characterization tools (e.g. drive-level capacitance profiling) at the Molecular Foundry, a Department of Energy User Facility, that are now available to both industrial and academic researchers via the grant process. PLANT PV was also able to develop the back end processing of thin film solar cells at Lawrence Berkeley National Labs to achieve 8.7% efficient CIGS solar cells. This processing development will be applied to other types of thin film PV cells at the Lawrence Berkeley National Labs. While PLANT PV was able to study AIGS film growth and optoelectronic properties we concluded that AIGS produced using these methods would have a limited efficiency and would not be commercially feasible. PLANT PV did not apply for the Phase II of this grant.

  20. Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

    DOE Patents [OSTI]

    Wang, Qi; Iwaniczko, Eugene

    2006-10-17

    A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.

  1. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells

    SciTech Connect (OSTI)

    Chu, T.L. )

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  2. Thin-film solar cell fabricated on a flexible metallic substrate

    DOE Patents [OSTI]

    Tuttle, John R.; Noufi, Rommel; Hasoon, Falah S.

    2006-05-30

    A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

  3. Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate

    DOE Patents [OSTI]

    Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

    2006-05-30

    A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

  4. Angular behavior of the absorption limit in thin film silicon solar cells

    E-Print Network [OSTI]

    Naqavi, Ali; Söderström, Karin; Battaglia, Corsin; Paeder, Vincent; Scharf, Toralf; Herzig, Hans Peter; Ballif, Christophe

    2013-01-01

    We investigate the angular behavior of the upper bound of absorption provided by the guided modes in thin film solar cells. We show that the 4n^2 limit can be potentially exceeded in a wide angular and wavelength range using two-dimensional periodic thin film structures. Two models are used to estimate the absorption enhancement; in the first one, we apply the periodicity condition along the thickness of the thin film structure but in the second one, we consider imperfect confinement of the wave to the device. To extract the guided modes, we use an automatized procedure which is established in this work. Through examples, we show that from the optical point of view, thin film structures have a high potential to be improved by changing their shape. Also, we discuss the nature of different optical resonances which can be potentially used to enhance light trapping in the solar cell. We investigate the two different polarization directions for one-dimensional gratings and we show that the transverse magnetic pola...

  5. Real time intelligent process control system for thin film solar cell manufacturing

    SciTech Connect (OSTI)

    George Atanasoff

    2010-10-29

    This project addresses the problem of lower solar conversion efficiency and waste in the typical solar cell manufacturing process. The work from the proposed development will lead toward developing a system which should be able to increase solar panel conversion efficiency by an additional 12-15% resulting in lower cost panels, increased solar technology adoption, reduced carbon emissions and reduced dependency on foreign oil. All solar cell manufacturing processes today suffer from manufacturing inefficiencies that currently lead to lower product quality and lower conversion efficiency, increased product cost and greater material and energy consumption. This results in slower solar energy adoption and extends the time solar cells will reach grid parity with traditional energy sources. The thin film solar panel manufacturers struggle on a daily basis with the problem of thin film thickness non-uniformity and other parameters variances over the deposited substrates, which significantly degrade their manufacturing yield and quality. Optical monitoring of the thin films during the process of the film deposition is widely perceived as a necessary step towards resolving the non-uniformity and non-homogeneity problem. In order to enable the development of an optical control system for solar cell manufacturing, a new type of low cost optical sensor is needed, able to acquire local information about the panel under deposition and measure its local characteristics, including the light scattering in very close proximity to the surface of the film. This information cannot be obtained by monitoring from outside the deposition chamber (as traditional monitoring systems do) due to the significant signal attenuation and loss of its scattering component before the reflected beam reaches the detector. In addition, it would be too costly to install traditional external in-situ monitoring systems to perform any real-time monitoring over large solar panels, since it would require significant equipment refurbishing needed for installation of multiple separate ellipsometric systems, and development of customized software to control all of them simultaneously. The proposed optical monitoring system comprises AccuStrata’s fiber optics sensors installed inside the thin film deposition equipment, a hardware module of different components (beyond the scope of this project) and our software program with iterative predicting capability able to control material bandgap and surface roughness as films are deposited. Our miniature fiber optics monitoring sensors are installed inside the vacuum chamber compartments in very close proximity where the independent layers are deposited (an option patented by us in 2003). The optical monitoring system measures two of the most important parameters of the photovoltaic thin films during deposition on a moving solar panel - material bandgap and surface roughness. In this program each sensor array consists of two fiber optics sensors monitoring two independent areas of the panel under deposition. Based on the monitored parameters and their change in time and from position to position on the panel, the system is able to provide to the equipment operator immediate information about the thin films as they are deposited. This DoE Supply Chain program is considered the first step towards the development of intelligent optical control system capable of dynamically adjusting the manufacturing process “on-the-fly” in order to achieve better performance. The proposed system will improve the thin film solar cell manufacturing by improving the quality of the individual solar cells and will allow for the manufacturing of more consistent and uniform products resulting in higher solar conversion efficiency and manufacturing yield. It will have a significant impact on the multibillion-dollar thin film solar market. We estimate that the financial impact of these improvements if adopted by only 10% of the industry ($7.7 Billion) would result in about $1.5 Billion in savings by 2015 (at the assumed 20% improvement). This can b

  6. Thin film solar cell configuration and fabrication method

    DOE Patents [OSTI]

    Menezes, Shalini

    2009-07-14

    A new photovoltaic device configuration based on an n-copper indium selenide absorber and a p-type window is disclosed. A fabrication method to produce this device on flexible or rigid substrates is described that reduces the number of cell components, avoids hazardous materials, simplifies the process steps and hence the costs for high volume solar cell manufacturing.

  7. Thin film photovoltaic cell

    DOE Patents [OSTI]

    Meakin, John D. (Newark, DE); Bragagnolo, Julio (Newark, DE)

    1982-01-01

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  8. Low-cost, deterministic quasi-periodic photonic structures for light trapping in thin film silicon solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    Light trapping has been an important issue for thin film silicon solar cells because of the low absorption coefficient in the near infrared range. In this paper, we present a photonic structure which combines anodic aluminum ...

  9. Characterization of the Electronic and Chemical Structure at the Thin Film Solar Cell Interfaces: June 2005 -- June 2009

    SciTech Connect (OSTI)

    Heske, C.

    2009-09-01

    Study using photoelectron spectroscopy, inverse photoemission, and X-ray absorption and emission to derive the electronic structure of interfaces in CIGSS and CdTe thin-film solar cells.

  10. PEDOT:PSS emitters on multicrystalline silicon thin-film absorbers for hybrid solar cells

    SciTech Connect (OSTI)

    Junghanns, Marcus; Plentz, Jonathan Andrä, Gudrun; Gawlik, Annett; Höger, Ingmar; Falk, Fritz

    2015-02-23

    We fabricated an efficient hybrid solar cell by spin coating poly(3,4-ethylene-dioxythiophene):polystyrenesulfonate (PEDOT:PSS) on planar multicrystalline Si (mc-Si) thin films. The only 5??m thin Si absorber layers were prepared by diode laser crystallization of amorphous Si deposited by electron beam evaporation on glass. On these absorber layers, we studied the effect of SiO{sub x} and Al{sub 2}O{sub 3} terminated Si surfaces. The short circuit density and power conversion efficiency (PCE) of the mc-Si/Al{sub 2}O{sub 3}/PEDOT:PSS solar cell increase from 20.6 to 25.4?mA/cm{sup 2} and from 7.3% to 10.3%, respectively, as compared to the mc-Si/SiO{sub x}/PEDOT:PSS cell. Al{sub 2}O{sub 3} lowers the interface recombination and improves the adhesion of the polymer film on the hydrophobic mc-Si thin film. Open circuit voltages up to 604?mV were reached. This study demonstrates the highest PCE so far of a hybrid solar cell with a planar thin film Si absorber.

  11. Cross-sectional electrostatic force microscopy of thin-film solar cells

    SciTech Connect (OSTI)

    Ballif, C.; Moutinho, H. R.; Al-Jassim, M. M.

    2001-01-15

    In a recent work, we showed that atomic force microscopy (AFM) is a powerful technique to image cross sections of polycrystalline thin films. In this work, we apply a modification of AFM, namely, electrostatic force microscopy (EFM), to investigate the electronic properties of cleaved II--VI and multijunction thin-film solar cells. We cleave the devices in such a way that they are still working with their nominal photovoltaic efficiencies and can be polarized for the measurements. This allows us to differentiate between surface effects (work function and surface band bending) and bulk device properties. In the case of polycrystalline CdTe/CdS/SnO{sub 2}/glass solar cells, we find a drop of the EFM signal in the area of the CdTe/CdS interface ({+-}50 nm). This drop varies in amplitude and sign according to the applied external bias and is compatible with an n-CdS/p-CdTe heterojunction model, thereby invalidating the possibility of a deeply buried n-p CdTe homojunction. In the case of a triple-junction GaInP/GaAs/Ge device, we observe a variation of the EFM signal linked to both the material work-function differences and to the voltage bias applied to the cell. We attempt a qualitative explanation of the results and discuss the implications and difficulties of the EFM technique for the study of such thin-film devices.

  12. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    future global energy production. Solar electricity represents a direction of great potential toward a renewable,

  13. Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells

    E-Print Network [OSTI]

    Deng, Xunming

    Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc- Si) triple-junction solar cell due to its higher optical in an a-Si based multiple- junction solar cell. 1. INTRODUCTION Narrow bandgap amorphous SiGe (a

  14. THIN FILM SOLAR CELLS AND A REVIEW OF RECENT RESULTS ON GaAs By PAUL RAPPAPORT,

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    154. THIN FILM SOLAR CELLS AND A REVIEW OF RECENT RESULTS ON GaAs By PAUL RAPPAPORT, RCA PHYSIQUE APPLIQUÃ?E TOME 1, SEPTEMBRE 1966, PAGE ' Two of the most urgent requirements of future solar cells are lower cost and lighter weight. Pre- sent cost of solar cells is in the s 200 to $ 400/watt range, which

  15. Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells

    E-Print Network [OSTI]

    Sites, James R.

    1 Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells, Setagaya-ku, Tokyo 157-8572, Japan (Received ) KEYWORDS: ZnS buffer, Cu(In,Ga)Se2, thin-film solar cells alternative to CdS in polycrystalline thin-film Cu(In1-xGax)Se2 (CIGS) solar cells. Cells with efficiency

  16. 22nd European Photovoltaic Solar Energy Conference, Milan, 3-7 September 2007 Cu(InGa)Se2 THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    22nd European Photovoltaic Solar Energy Conference, Milan, 3-7 September 2007 Cu(InGa)Se2 THIN-FILM INTRODUCTION Cu(InGa)Se2-based thin-film solar cells have high conversion-efficiencies (the laboratory record

  17. Thin film GaAs solar cells on glass substrates by epitaxial liftoff

    SciTech Connect (OSTI)

    Lee, X.Y.; Goertemiller, M.; Boroditsky, M.; Ragan, R.; Yablonovitch, E.

    1997-02-01

    In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

  18. Damage mechanisms in thin film solar cells during sputtering deposition of transparent conductive coatings

    SciTech Connect (OSTI)

    Fan Qihua; Liao Xianbo [Department of Physics and Astronomy, University of Toledo, 2801 West Bancroft Street, Toledo, Ohio 43606 (United States); Deng, Michael [Xunlight Corporation, 3145 Nebraska Avenue, Toledo, Ohio 43607 (United States); Deng Xunming [Department of Physics and Astronomy, University of Toledo, 2801 West Bancroft Street, Toledo, Ohio 43606 (United States); Xunlight Corporation, 3145 Nebraska Avenue, Toledo, Ohio 43607 (United States)

    2009-02-01

    Amorphous silicon (a-Si) based thin film solar cell grown on flexible stainless steel substrate is one of the most promising energy conversion devices in the future. This type of solar cell uses a transparent conductive oxide (TCO) film as top electrode. It has been a widely accepted opinion that the radio frequency sputtering deposition of the TCO film produces a higher yield than direct current sputtering, and the reason is not clear. Here we show that the damage to the solar cell during the sputtering process is caused by a reverse bias applied to the n-i-p junction. This reverse bias is related to the characteristics of plasma discharge. The mechanism we reveal may significantly affect the solar cell process.

  19. A Review of Thin Film Silicon for Solar Cell Applications

    E-Print Network [OSTI]

    .4.1 Results for Multilayer Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 11.4.2 Modelling of Multilayer Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 11 may be transfered to large area fabrication are prerequisites. The e

  20. Structural and chemical investigations of CBD-and PVD-CdS buffer layers and interfaces in Cu(In,Ga)Se2-based thin film solar cells

    E-Print Network [OSTI]

    Romeo, Alessandro

    (In,Ga)Se2-based thin film solar cells D. Abou-Rasa,b,*, G. Kostorza , A. Romeob,1 , D. Rudmannb , A Available online 8 December 2004 Abstract It is known that high-efficiency thin film solar cells based on Cu in efficiencies of solar cells with CBD- and PVD-CdS buffer layers can partly be explained by referring

  1. Back contact buffer layer for thin-film solar cells

    DOE Patents [OSTI]

    Compaan, Alvin D.; Plotnikov, Victor V.

    2014-09-09

    A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

  2. Thin film polycrystalline silicon: Promise and problems in displays and solar cells

    SciTech Connect (OSTI)

    Fonash, S.J.

    1995-08-01

    Thin film polycrystalline Si (poly-Si) with its carrier mobilities, potentially good stability, low intragrain defect density, compatibility with silicon processing, and ease of doping activation is an interesting material for {open_quotes}macroelectronics{close_quotes} applications such as TFTs for displays and solar cells. The poly-Si films needed for these applications can be ultra-thin-in the 500{Angstrom} to 1000{Angstrom} thickness range for flat panel display TFTs and in the 4{mu}m to 10{mu}m thickness range for solar cells. Because the films needed for these microelectronics applications can be so thin, an effective approach to producing the films is that of crystallizing a-Si precursor material. Unlike cast materials, poly-Si films made this way can be produced using low temperature processing. Unlike deposited poly-Si films, these crystallized poly-Si films can have grain widths that are much larger than the film thickness and almost atomically smooth surfaces. This thin film poly-Si crystallized from a-Si precursor films, and its promise and problems for TFTs and solar cells, is the focus of this discussion.

  3. Controlling the Texture and Crystallinity of Evaporated Lead Phthalocyanine Thin Films for Near-Infrared Sensitive Solar Cells

    E-Print Network [OSTI]

    Schreiber, Frank

    Controlling the Texture and Crystallinity of Evaporated Lead Phthalocyanine Thin Films for Near-Infrared Sensitive Solar Cells Karolien Vasseur,, Katharina Broch,§ Alexander L. Ayzner, Barry P. Rand, David Cheyns: To achieve organic solar cells with a broadened spectral absorption, we aim to promote the growth of the near

  4. Structural and chemical investigations of CBD-and PVD-CdS buffer layers and interfaces in Cu(In,Ga)Se2-based thin film solar cells

    E-Print Network [OSTI]

    Romeo, Alessandro

    (In,Ga)Se2-based thin film solar cells D. Abou-Rasa,b,*, G. Kostorza , A. Romeob,1 , D. Rudmannb , A.N. Tiwarib,2 a ETH Zu¨rich, Institute of Applied Physics, 8093 Zu¨rich, Switzerland b ETH Zu¨rich, Thin Film Available online 8 December 2004 Abstract It is known that high-efficiency thin film solar cells based on Cu

  5. Copper and Transparent-Conductor Reflectarray Elements on Thin-Film Solar Cell Panels

    E-Print Network [OSTI]

    Dreyer, Philippe; Nicolay, Sylvain; Ballif, Christophe; Perruisseau-Carrier, Julien

    2013-01-01

    This work addresses the integration of reflectarray antennas (RA) on thin film Solar Cell (SC) panels, as a mean to save real estate, weight, or cost in platforms such as satellites or transportable autonomous antenna systems. Our goal is to design a good RA unit cell in terms of phase response and bandwidth, while simultaneously achieving high optical transparency and low microwave loss, to preserve good SC and RA energy efficiencies, respectively. Since there is a trade-off between the optical transparency and microwave surface conductivity of a conductor, here both standard copper and transparent conductors are considered. The results obtained at the unit cell level demonstrates the feasibility of integrating RA on a thin-film SC, preserving for the first time good performance in terms of both SC and RA efficiency. For instance, measurement at X-band demonstrate families of cells providing a phase range larger than 270{\\deg} with average microwave loss of -2.45dB (resp. -0.25dB) and average optical transpa...

  6. A non-resonant dielectric metamaterial for enhancement of thin-film solar cells

    E-Print Network [OSTI]

    Omelyanovich, Mikhail; Simovski, Constantin

    2014-01-01

    Recently, we have suggested dielectric metamaterial composed as an array of submicron dielectric spheres located on top of an amorphous thin-film solar cell. We have theoretically shown that this metamaterial can decrease the reflection and simultaneously can suppress the transmission through the photovoltaic layer because it transforms the incident plane wave into a set of focused light beams. This theoretical concept has been strongly developed and experimentally confirmed in the present paper. Here we consider the metamaterial for oblique angle illumination, redesign the solar cell and present a detailed experimental study of the whole structure. In contrast to our precedent theoretical study we show that our omnidirectional light-trapping structure may operate better than the optimized flat coating obtained by plasma-enhanced chemical vapor deposition.

  7. Plasmonic light trapping in thin-film Si solar cells This article has been downloaded from IOPscience. Please scroll down to see the full text article.

    E-Print Network [OSTI]

    Polman, Albert

    devices, semiconductors containing scarce elements such as CdTe and CuInGaSe2 have entered the marketPlasmonic light trapping in thin-film Si solar cells This article has been downloaded from Plasmonic light trapping in thin-film Si solar cells P Spinelli1 , V E Ferry2 , J van de Groep1 , M van Lare

  8. QUANTIFICATION OF LOSSES IN THIN-FILM CdS/CdTe SOLAR CELLS S.H. Demtsu and J.R. Sites

    E-Print Network [OSTI]

    Sites, James R.

    QUANTIFICATION OF LOSSES IN THIN-FILM CdS/CdTe SOLAR CELLS S.H. Demtsu and J.R. Sites Department of Physics, Colorado State University, Fort Collins, CO 80523, USA ABSTRACT Quantification of solar cell Thin-film CdS/CdTe devices have been studied extensively, but some basic underlying properties

  9. A survey of thin-film solar photovoltaic industry & technologies

    E-Print Network [OSTI]

    Grama, Sorin

    2007-01-01

    A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

  10. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  11. DEVELOPMENT OF A NOVEL PRECURSOR FOR THE PREPARATION BY SELENIZATION OF HIGH EFFICIENCY CuInGaSe2/CdS THIN FILM SOLAR CELLS

    E-Print Network [OSTI]

    Romeo, Alessandro

    /CdS THIN FILM SOLAR CELLS N. Romeo1 , A. Bosio1 , V. Canevari2 , R. Tedeschi1 , S. Sivelli1 , A, Italy 3 Scientific and Technological Department, University of Verona, Italy 4 ETH Zürich Thin Films@phys.ethz.ch ABSTRACT: A novel precursor suitable to prepare uniform CuInGaSe2 thin films on an 1 inch2 area has been

  12. Local Charge Neutrality Condition, Fermi Level, and Carrier Compensation of CdTe Polycrystalline Thin Film in CdS/CdTe Solar Cells

    E-Print Network [OSTI]

    Thin Film in CdS/CdTe Solar Cells Ken K. Chin1 and Su-Huai Wei 2 1 Department of Physics and Apollo Cd vacancies VCd (o/-) and VCd (-/2-) in CdTe thin film), the general formulation of charge neutrality-level and multi-configuration intrinsic/impurity defect states for understanding the performance of CdTe thin film

  13. Universality of Non-Ohmic Shunt Leakage in Thin-Film Solar Cells

    SciTech Connect (OSTI)

    Dongaonkar, S.; Servaites, J. D.; Ford, G. M.; Loser, Stephen; Moore, J.; Gelfand, R. M.; Mohseni, H. W.; Agrawal, R.; Ratner, Mark A.; Marks, Tobin J.; Lundstrom, M. S.; Alam, M. A.

    2010-01-01

    We compare the dark current-voltage (IV) characteristics of three different thin-film solar cell types: hydrogenated amorphous silicon (a-Si:H) p-i-n cells, organic bulk heterojunction (BHJ) cells, and Cu(In,Ga)Se{sub 2} (CIGS) cells. All three device types exhibit a significant shunt leakage current at low forward bias (Vsolar cell diode model. This parasitic shunt current exhibits non-Ohmic behavior, as opposed to the traditional constant shunt resistance model for photovoltaics. We show here that this shunt leakage (I{sub sh} ) , across all three solar cell types considered, is characterized by the following common phenomenological features: (a) voltage symmetry about V=0 , (b) nonlinear (power law) voltage dependence, and (c) extremely weak temperature dependence. Based on this analysis, we provide a simple method of subtracting this shunt current component from the measured data and discuss its implications on dark IV parameter extraction. We propose a space charge limited (SCL) current model for capturing all these features of the shunt leakage in a consistent framework and discuss possible physical origin of the parasitic paths responsible for this shunt current mechanism.

  14. Spin Coated Plasmonic Nanoparticle Interfaces for Photocurrent Enhancement in Thin Film Si Solar Cells

    E-Print Network [OSTI]

    Israelowitz, Miriam; Cong, Tao; Sureshkumar, Radhakrishna

    2013-01-01

    Nanoparticle (NP) arrays of noble metals strongly absorb light in the visible to infrared wavelengths through resonant interactions between the incident electromagnetic field and the metal's free electron plasma. Such plasmonic interfaces enhance light absorption and photocurrent in solar cells. We report a cost effective and scalable room temperature/pressure spin-coating route to fabricate broadband plasmonic interfaces consisting of silver NPs. The NP interface yields photocurrent enhancement (PE) in thin film silicon devices by up to 200% which is significantly greater than previously reported values. For coatings produced from Ag nanoink containing particles with average diameter of 40 nm, an optimal NP surface coverage of 7% was observed. Scanning electron microscopy of interface morphologies revealed that for low surface coverage, particles are well-separated, resulting in broadband PE. At higher surface coverage, formation of particle strings and clusters caused red-shifting of the PE peak and a narro...

  15. Overview and Challenges of Thin Film Solar Electric Technologies

    SciTech Connect (OSTI)

    Ullal, H. S.

    2008-12-01

    In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

  16. Investigation of porous alumina as a self-assembled diffractive element to facilitate light trapping in thin film silicon solar cells

    E-Print Network [OSTI]

    Coronel, Naomi (Naomi Cristina)

    2009-01-01

    Thin film solar cells are currently being investigated as an affordable alternative energy source because of the reduced material cost. However, these devices suffer from low efficiencies, compared to silicon wafer solar ...

  17. Light trapping in thin-film solar cells measured by Raman spectroscopy

    SciTech Connect (OSTI)

    Ledinský, M., E-mail: ledinsky@fzu.cz [Laboratory of Nanostructures and Nanomaterials, Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Cukrovarnická 10, 162 00 Prague (Czech Republic); Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); Moulin, E.; Bugnon, G.; Meillaud, F.; Ballif, C. [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); Ganzerová, K.; Vetushka, A.; Fejfar, A. [Laboratory of Nanostructures and Nanomaterials, Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Cukrovarnická 10, 162 00 Prague (Czech Republic)

    2014-09-15

    In this study, Raman spectroscopy is used as a tool to determine the light-trapping capability of textured ZnO front electrodes implemented in microcrystalline silicon (?c-Si:H) solar cells. Microcrystalline silicon films deposited on superstrates of various roughnesses are characterized by Raman micro-spectroscopy at excitation wavelengths of 442?nm, 514?nm, 633?nm, and 785?nm, respectively. The way to measure quantitatively and with a high level of reproducibility the Raman intensity is described in details. By varying the superstrate texture and with it the light trapping in the ?c-Si:H absorber layer, we find significant differences in the absolute Raman intensity measured in the near infrared wavelength region (where light trapping is relevant). A good agreement between the absolute Raman intensity and the external quantum efficiency of the ?c-Si:H solar cells is obtained, demonstrating the validity of the introduced method. Applications to thin-film solar cells, in general, and other optoelectronic devices are discussed.

  18. DEVELOPMENT OF A NOVEL PRECURSOR FOR THE PREPARATION BY SELENIZATION OF HIGH EFFICIENCY CuInGaSe2/CdS THIN FILM SOLAR CELLS

    E-Print Network [OSTI]

    Romeo, Alessandro

    /CdS THIN FILM SOLAR CELLS N. Romeo1 , A. Bosio1 , V. Canevari2 , R. Tedeschi1 , S. Sivelli1 , A. Solar cells prepared by depositing in sequence on top of the CuInGaSe2 film 60 nm of CdS, 100 nm of pure(InGa)Se2, Thin Films, Selenization 1 INTRODUCTION CuInGaSe2 based solar cells exhibit the highest

  19. Thin film photovoltaic cells

    DOE Patents [OSTI]

    Rothwarf, Allen (Philadelphia, PA)

    1981-01-01

    A solar cell has as its transparent electrical contact a grid made from a non-noble metal by providing a layer of copper oxide between the transparent electrical contact and the absorber-generator.

  20. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  1. Predictive Modeling for Glass-Side Laser Scribing of Thin Film Photovoltaic Cells

    E-Print Network [OSTI]

    Yao, Y. Lawrence

    :F, CdTe, solar cell INTRODUCTION Thin-film solar cell is a promising technology to achieve substrates. Cadmium telluride (CdTe) is the dominant thin film solar cell material in recent years because manufacturing processes in the fabrication of thin film solar cells is monolithic cell isolation and series

  2. New strategy to promote conversion efficiency using high-index nanostructures in thin-film solar cells

    E-Print Network [OSTI]

    Wang, DongLin

    2014-01-01

    Nano-scaled metallic or dielectric structures may provide various ways to trap light into thin-film solar cells for improving the conversion efficiency. In most schemes, the textured active layers are involved into light trapping structures that can provide perfect optical benefits but also bring undesirable degradation of electrical performance. Here we propose a novel approach to design high-performance thin-film solar cells. In our strategy, a flat active layer is adopted for avoiding electrical degradation, and an optimization algorithm is applied to seek for an optimized light trapping structure for the best optical benefit. As an example, we show that the efficiency of a flat a-Si:H thin-film solar cell can be promoted close to the certified highest value. It is also pointed out that, by choosing appropriate dielectric materials with high refractive index (>3) and high transmissivity in wavelength region of 350nm-800nm, the conversion efficiency of solar cells can be further enhanced.

  3. Novel R2R Manufacturable Photonic-Enhanced Thin Film Solar Cells; January 28, 2010 -- January 31, 2011

    SciTech Connect (OSTI)

    Slafer, D.; Dalal, V.

    2012-03-01

    Final subcontract report for PV Incubator project 'Novel R2R Manufacturable Photonic-Enhanced Thin Film Solar Cells.' The goal of this program was to produce tandem Si cells using photonic bandgap enhancement technology developed at ISU and Lightwave Power that would have an NREL-verified efficiency of 7.5% on 0.25 cm{sup 2} area tandem junction cell on plastic substrates. This goal was met and exceeded within the timeframe and budget of the program. On smaller area cells, the efficiency was even higher, {approx}9.5% (not verified by NREL). Appropriate polymers were developed to fabricate photonic and plasmonic devices on stainless steel, Kapton and PEN substrates. A novel photonic-plasmon structure was developed which shows a promise of improving light absorption in thin film cells, a better light absorption than by any other scheme.

  4. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

    DOE Patents [OSTI]

    Mickelsen, Reid A. (Bellevue, WA) [Bellevue, WA; Chen, Wen S. (Seattle, WA) [Seattle, WA

    1985-08-13

    An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

  5. Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2

    DOE Patents [OSTI]

    Mickelsen, R.A.; Chen, W.S.

    1982-06-15

    An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (1) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI[sub 2] chalcopyrite ternary materials which is vacuum deposited in a thin composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns ([approx equal]2.5[mu]m to [approx equal]5.0[mu]m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (2), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, is allowed.

  6. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

    DOE Patents [OSTI]

    Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

    1982-01-01

    An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

  7. Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}

    DOE Patents [OSTI]

    Mickelsen, R.A.; Chen, W.S.

    1985-08-13

    An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

  8. Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light-scattering substrate

    E-Print Network [OSTI]

    Psaltis, Demetri

    Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light://jap.aip.org/about/rights_and_permissions #12;Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light developed substrate that decouples the growth and scattering interfaces are investigated in n-i-p triple-junction

  9. Development of Commercial Technology for Thin Film Silicon Solar Cells on Glass: Cooperative Research and Development Final Report, CRADA Number CRD-07-209

    SciTech Connect (OSTI)

    Sopori, B.

    2013-03-01

    NREL has conducted basic research relating to high efficiency, low cost, thin film silicon solar cell design and the method of making solar cells. Two patents have been issued to NREL in the above field. In addition, specific process and metrology tools have been developed by NREL. Applied Optical Sciences Corp. (AOS) has expertise in the manufacture of solar cells and has developed its own unique concentrator technology. AOS wants to complement its solar cell expertise and its concentrator technology by manufacturing flat panel thin film silicon solar cell panels. AOS wants to take NREL's research to the next level, using it to develop commercially viable flat pane, thin film silicon solar cell panels. Such a development in equipment, process, and metrology will likely produce the lowest cost solar cell technology for both commercial and residential use. NREL's fundamental research capability and AOS's technology and industrial background are complementary to achieve this product development.

  10. High-efficiency, thin-film solar cells. Annual subcontractor report, 1 July 1991--30 June 1992

    SciTech Connect (OSTI)

    Gale, R.P.

    1994-01-01

    This report describes work on a 3-year research program to investigate thin-film GaAs/GaInP cells using the cleavage of lateral epitaxial film for transfer (CLEFT) technique, and to determine the process to enable overgrowth of GaAs films using organometallic chemistry. Application of the CLEFT thin-film technique to GaInP/GaAs solar cells and organometallic overgrowth was investigated. A problem of alloy contamination was identified and controlled, leading to higher quality layers. Solar cell structures were grown and fabricated using previously determined growth parameters for GaAs and GaInP. With the improved materials developed significant improvements were made in solar cell performance. Conditions for in-situ overgrowth by organometallic chemical vapor deposition (OMCVD) were determined and continuous GaAs layers were grown over a separation mask layer. The layers were successfully separated from their substrate using the CLEFT process, demonstrating the application of overgrowth using OM chemistry with HCl.

  11. Simulation of nanostructure-based and ultra-thin film solar cell devices beyond the classical picture

    E-Print Network [OSTI]

    Aeberhard, Urs

    2014-01-01

    In this paper, an optoelectronic device simulation framework valid for arbitrary spatial variation of electronic potentials and optical modes, and for transport regimes ranging from ballistic to diffusive, is used to study non-local photon absorption, photocurrent generation and carrier extraction in ultra-thin film and nanostructure-based solar cell devices at the radiative limit. Among the effects that are revealed by the microscopic approach and which are inaccessible to macroscopic models is the impact of structure, doping or bias induced nanoscale potential variations on the local photogeneration rate and the photocarrier transport regime.

  12. Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics

    E-Print Network [OSTI]

    Chung, Choong-Heui

    2012-01-01

    of a CIGS film of 19.9% efficiency solar cells taken fromCIGS grains of 19.9% efficiency solar cells [5] and currentof a CIGS film of 19.9% efficiency solar cells taken from

  13. Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics

    E-Print Network [OSTI]

    Chung, Choong-Heui

    2012-01-01

    cm 2 ) efficiency CIGS solar cells taken from reference [and 20.3% efficiency CIGS solar cells [6] through the use ofcm 2 ) efficiency CIGS solar cells taken from reference [6].

  14. Multilayer nanoparticle arrays for broad spectrum absorption enhancement in thin film solar cells

    E-Print Network [OSTI]

    Krishnan, Aravind; Krishna, Siva Rama; Khan, Mohammed Zafar Ali

    2013-01-01

    In this paper, we present a theoretical study on the absorption efficiency enhancement of a thin film amorphous Silicon (a-Si) photovoltaic cell over a broad spectrum of wavelengths using multiple nanoparticle arrays. The light absorption efficiency is enhanced in the lower wavelengths by a nanoparticle array on the surface and in the higher wavelengths by another nanoparticle array embedded in the active region. The efficiency at intermediate wavelengths is enhanced by the constructive interference of plasmon coupled light. We optimize this design by tuning the radius of particles in both arrays, the period of the array and the distance between the two arrays. The optimization results in 61.44% increase in total quantum efficiency for a 500 nm thick a-Si substrate.

  15. Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics

    E-Print Network [OSTI]

    Chung, Choong-Heui

    2012-01-01

    and for emerging flexible electronics. Calculations predictto flexible solar cells, displays, and other electronics

  16. Thin film absorber for a solar collector

    DOE Patents [OSTI]

    Wilhelm, William G. (Cutchogue, NY)

    1985-01-01

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  17. Optimization-based design of surface textures for thin-film Si solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    We numerically investigate the light-absorption behavior of thin-film silicon for normal-incident light, using surface textures to enhance absorption. We consider a variety of texture designs, such as simple periodic ...

  18. Light trapping and electrical transport in thin-film solar cells with randomly rough textures

    E-Print Network [OSTI]

    Yet, the central problem of thin-film photovoltaics is to capture and absorb sunlight in a thin active for photovoltaic applica- tions as intrinsically broadband scatterers. In this work, we use rigorous electro

  19. CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar

    E-Print Network [OSTI]

    Sites, James R.

    CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar 1 , Parag 80523 ABSTRACT Copper indium gallium sulfide, CuIn1-xGaxS2 (CIGS2) solar cells prepared with chemical/heterojunction partner/ ZnO/Cr/Ag contact fingers solar cells of area ~0.44 cm 2 were fabricated at FSEC

  20. innovati nNREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells

    E-Print Network [OSTI]

    CIGS solar cells. Their use of the high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials are plentiful. In contrast, CIGS solar cells with wide bandgaps can function at higher efficiencies regardless

  1. Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby

    DOE Patents [OSTI]

    Wu, Xuanzhi (Golden, CO); Sheldon, Peter (Lakewood, CO)

    2000-01-01

    A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

  2. 1. INTRODUCTION Polycrystalline CdTe thin films solar cells have shown long

    E-Print Network [OSTI]

    Romeo, Alessandro

    to the solar panel that can be adapted to any kind of shape and is easy to deploy in space. We have developed ~12% efficiency (AM1.5) CdTe solar cells on glass substrates with a vacuum deposition process [3 in the "superstrate" or "substrate" configuration (see figure 1). High efficiency CdTe solar cells are generally grown

  3. Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells

    E-Print Network [OSTI]

    Deceglie, Michael G.

    2014-01-01

    Accounting for Localized Defects in the OptoelectronicH solar cells. Explicitly accounting for local variations inthe importance of accounting for defect geometry, and that

  4. Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization

    E-Print Network [OSTI]

    Bielecki, Anthony

    2013-01-01

    Katagiri, Cu2ZnSnS4 thin film solar cells, Thin Solid FilmsIndium Galenide Films Thin-film solar cells are created bycandidate for thin- film solar cells. CIGS solar cell

  5. Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations

    SciTech Connect (OSTI)

    Bozzola, A. Kowalczewski, P.; Andreani, L. C.

    2014-03-07

    Thin-film solar cells based on silicon have emerged as an alternative to standard thick wafers technology, but they are less efficient, because of incomplete absorption of sunlight, and non-radiative recombinations. In this paper, we focus on the case of crystalline silicon (c-Si) devices, and we present a full analytic electro-optical model for p-n junction solar cells with Lambertian light trapping. This model is validated against numerical solutions of the drift-diffusion equations. We use this model to investigate the interplay between light trapping, and bulk and surface recombination. Special attention is paid to surface recombination processes, which become more important in thinner devices. These effects are further amplified due to the textures required for light trapping, which lead to increased surface area. We show that c-Si solar cells with thickness of a few microns can overcome 20% efficiency and outperform bulk ones when light trapping is implemented. The optimal device thickness in presence of light trapping, bulk and surface recombination, is quantified to be in the range of 10–80??m, depending on the bulk quality. These results hold, provided the effective surface recombination is kept below a critical level of the order of 100?cm/s. We discuss the possibility of meeting this requirement, in the context of state-of-the-art techniques for light trapping and surface passivation. We show that our predictions are within the capability of present day silicon technologies.

  6. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991

    SciTech Connect (OSTI)

    Chu, T.L.

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  7. Light trapping in thin film solar cells using textured photonic crystal

    DOE Patents [OSTI]

    Yi, Yasha (Somerville, MA); Kimerling, Lionel C. (Concord, MA); Duan, Xiaoman (Amesbury, MA); Zeng, Lirong (Cambridge, MA)

    2009-01-27

    A solar cell includes a photoactive region that receives light. A photonic crystal is coupled to the photoactive region, wherein the photonic crystal comprises a distributed Bragg reflector (DBR) for trapping the light.

  8. Integration of a 2D Periodic Nanopattern Into Thin Film Polycrystalline Silicon Solar Cells by Nanoimprint Lithography

    E-Print Network [OSTI]

    Abdo, Islam; Deckers, Jan; Depauw, Valérie; Tous, Loic; Van Gestel, Dries; Guindi, Rafik; Gordon, Ivan; Daif, Ounsi El

    2015-01-01

    The integration of two-dimensional (2D) periodic nanopattern defined by nanoimprint lithography and dry etching into aluminum induced crystallization (AIC) based polycrystalline silicon (Poly-Si) thin film solar cells is investigated experimentally. Compared to the unpatterned cell an increase of 6% in the light absorption has been achieved thanks to the nanopattern which, in turn, increased the short circuit current from 20.6 mA/cm2 to 23.8 mA/cm2. The efficiency, on the other hand, has limitedly increased from 6.4% to 6.7%. We show using the transfer length method (TLM) that the surface topography modification caused by the nanopattern has increased the sheet resistance of the antireflection coating (ARC) layer as well as the contact resistance between the ARC layer and the emitter front contacts. This, in turn, resulted in increased series resistance of the nanopatterned cell which has translated into a decreased fill factor, explaining the limited increase in efficiency.

  9. Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor

    DOE Patents [OSTI]

    Dhere, Neelkanth G.; Kadam, Ankur A.

    2009-12-15

    A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS absorber layer formed by a process including selenizing a metal precursor using diethyl selenium to form the CIGSS absorber layer.

  10. NANOCOMPOSITE ENABLED SENSITIZED SOLAR CELL

    E-Print Network [OSTI]

    Phuyal, Dibya

    2012-01-01

    there is a great deal of interest in thin-film solar cells.Thin-film solar cells are made from a variety oflimitation in all thin-film solar cell technologies is that

  11. Core/Shell heterojunction nanowire solar cell fabricated by lithographically patterned nanowire electrodeposition method

    E-Print Network [OSTI]

    Ghosh, Somnath

    2012-01-01

    thin-film solar cellsthin film technology. Thin film solar cells use an averagethinner than the c-Si. Thin film solar cell can be deposited

  12. Effect of In Situ Thermal Annealing Process on Structural, Optical and Electrical Properties of CdS\\CdTe Thin-Film Solar Cells Fabricated by Pulsed Laser Deposition

    E-Print Network [OSTI]

    Al-mebir, Alaa Ayad Khedhair

    2015-08-31

    Cadmium Telluride has long been recognized as the second lowest- cost material after Si in the world photovoltaic market, specifically for thin-film solar cells. The two attractive properties of the CdTe are its nearly ...

  13. Tax Credits Give Thin-Film Solar a Big Boost

    Office of Energy Efficiency and Renewable Energy (EERE)

    California company will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.

  14. (Sr,Ba)(Si,Ge){sub 2} for thin-film solar-cell applications: First-principles study

    SciTech Connect (OSTI)

    Kumar, Mukesh E-mail: mkgarg79@gmail.com; Umezawa, Naoto; Imai, Motoharu

    2014-05-28

    In order to meet the increasing demand for electric power generation from solar energy conversion, the development of efficient light absorber materials has been awaited. To this end, the electronic and optical properties of advanced alkaline-earth-metals disilicides and digermanides (SrSi{sub 2}, BaSi{sub 2}, SrGe{sub 2}, and BaGe{sub 2}) are studied by means of the density functional theory using HSE06 exchange-correlation energy functional. Our calculations show that all these orthorhombic structured compounds have fundamental indirect band gaps in the range E{sub g} ? 0.89–1.25 eV, which is suitable for solar cell applications. The estimated lattice parameters and band gaps are in good agreement with experiments. Our calculations show that the electronic band structures of all four compounds are very similar except in the vicinity of the ?-point. The valence band of these compounds is made up by Si(Ge)-p states, whereas the conduction band is composed of Sr(Ba)-d states. Their band alignments are carefully determined by estimating the work function of each compound using slab model. The optical properties are discussed in terms of the complex dielectric function ?(?)?=??{sub 1}(?)?+?i?{sub 2}(?). The static and high-frequency dielectric constants are calculated, taking into account the ionic contribution. The absorption coefficient ?(?) demonstrates that a low energy dispersion of the conduction band, which results in a flat conduction band minimum, leads to large optical activity in these compounds. Therefore, alkaline-earth-metals disilicides and digermanides possess great potential as light absorbers for applications in thin-film solar cell technologies.

  15. Thin film solar cells using impure polycrystalline silicon M. Rodot (1), M. Barbe (1), J. E. Bouree (1), V. Perraki (*) (1), G. Revel (2),R. Kishore (2) (**), J. L. Pastol (2), R. Mertens (3), M. Caymax (3) and M. Eyckmans

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    687 Thin film solar cells using impure polycrystalline silicon M. Rodot (1), M. Barbe (1), J. E avec les autres aptes à l'utilisation de Si-UMG bon marché. Abstract. 2014 Epitaxial solar cells have and electron diffusion length adequate to produce good solar cells. 10.3 % efficiency cells have been obtained

  16. Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications

    SciTech Connect (OSTI)

    Theodorakos, I.; Zergioti, I.; Tsoukalas, D.; Raptis, Y. S.; Vamvakas, V.

    2014-01-28

    In this work, a picosecond diode pumped solid state laser and a nanosecond Nd:YAG laser have been used for the annealing and the partial nano-crystallization of an amorphous silicon layer. These experiments were conducted as an alternative/complementary to plasma-enhanced chemical vapor deposition method for fabrication of micromorph tandem solar cell. The laser experimental work was combined with simulations of the annealing process, in terms of temperature distribution evolution, in order to predetermine the optimum annealing conditions. The annealed material was studied, as a function of several annealing parameters (wavelength, pulse duration, fluence), as far as it concerns its structural properties, by X-ray diffraction, SEM, and micro-Raman techniques.

  17. High-Efficiency CdTe and CIGS Thin-Film Solar Cells: Highlights and Challenges; Preprint

    SciTech Connect (OSTI)

    Noufi, R.; Zweibel, K.

    2006-05-01

    Thin-film photovoltaic (PV) modules of CdTe and Cu(In,Ga)Se2 (CIGS) have the potential to reach cost-effective PV-generated electricity. These technologies have transitioned from the laboratory to the market place. Pilot production and first-time manufacturing are ramping up to higher capacity and enjoying a flood of venture-capital funding. CIGS solar cells and modules have achieved 19.5% and 13% efficiencies, respectively. Likewise, CdTe cells and modules have reached 16.5% and 10.2% efficiencies, respectively. Even higher efficiencies from the laboratory and from the manufacturing line are only a matter of time. Manufacturing-line yield continues to improve and is surpassing 85%. Long-term stability has been demonstrated for both technologies; however, some failures in the field have also been observed, emphasizing the critical need for understanding degradation mechanisms and packaging options. The long-term potential of the two technologies require R&D emphasis on science and engineering-based challenges to find solutions to achieve targeted cost-effective module performance, and in-field durability. Some of the challenges are common to both, e.g., in-situ process control and diagnostics, thinner absorber, understanding degradation mechanisms, protection from water vapor, and innovation in high-speed processing and module design. Other topics are specific to the technology, such as lower-cost and fast-deposition processes for CIGS, and improved back contact and voltage for CdTe devices.

  18. Modeling of thin-film solar thermoelectric generators

    E-Print Network [OSTI]

    Weinstein, Lee Adragon

    Recent advances in solar thermoelectric generator (STEG) performance have raised their prospect as a potential technology to convert solar energy into electricity. This paper presents an analysis of thin-film STEGs. ...

  19. Cu(In,Ga)Se2 alloys are the leading choice for absorber layers in high-efficiency thin film solar cells due to their direct gap, high absorption

    E-Print Network [OSTI]

    Rockett, Angus

    film solar cells due to their direct gap, high absorption coefficient and excellent thermal stability]/[In+Ga]SubstrateCrystalSample *Negligible amount of Ga diffused into back of film from substrate; not detectable by EDX Device structure GaAs(In,Ga)SePhotoluminescence Excitation Spectroscopy of Cu(In,Ga)Se22 Thin FilmsThin Films Damon Hebert, Julio Soares, Marie Mayer, Angus

  20. CdTe Thin Film Solar Cells and Modules Tutorial; NREL (National Renewable Energy Laboratory)

    SciTech Connect (OSTI)

    Albin, David S.

    2015-06-13

    This is a tutorial presented at the 42nd IEEE Photovoltaics Specialists Conference to cover the introduction, background, and updates on CdTe cell and module technology, including CdTe cell and module structure and fabrication.

  1. Near perfect solar absorption in ultra-thin-film GaAs photonic crystals

    E-Print Network [OSTI]

    John, Sajeev

    Near perfect solar absorption in ultra-thin-film GaAs photonic crystals Sergey Eyderman,*a Alexei voltage of GaAs solar cells. The current world record for high efficiency solar cells is held by thin ultra-thin (GaAs in low-cost solar cells. However, this reduction in the volume

  2. Reliable wet-chemical cleaning of natively oxidized high-efficiency Cu(In,Ga)Se{sub 2} thin-film solar cell absorbers

    SciTech Connect (OSTI)

    Lehmann, Jascha; Lehmann, Sebastian; Lauermann, Iver; Rissom, Thorsten; Kaufmann, Christian A.; Lux-Steiner, Martha Ch.; Bär, Marcus; Sadewasser, Sascha

    2014-12-21

    Currently, Cu-containing chalcopyrite-based solar cells provide the highest conversion efficiencies among all thin-film photovoltaic (PV) technologies. They have reached efficiency values above 20%, the same performance level as multi-crystalline silicon-wafer technology that dominates the commercial PV market. Chalcopyrite thin-film heterostructures consist of a layer stack with a variety of interfaces between different materials. It is the chalcopyrite/buffer region (forming the p-n junction), which is of crucial importance and therefore frequently investigated using surface and interface science tools, such as photoelectron spectroscopy and scanning probe microscopy. To ensure comparability and validity of the results, a general preparation guide for “realistic” surfaces of polycrystalline chalcopyrite thin films is highly desirable. We present results on wet-chemical cleaning procedures of polycrystalline Cu(In{sub 1-x}Ga{sub x})Se{sub 2} thin films with an average x?=?[Ga]/([In]?+?[Ga])?=?0.29, which were exposed to ambient conditions for different times. The hence natively oxidized sample surfaces were etched in KCN- or NH{sub 3}-based aqueous solutions. By x-ray photoelectron spectroscopy, we find that the KCN treatment results in a chemical surface structure which is – apart from a slight change in surface composition – identical to a pristine as-received sample surface. Additionally, we discover a different oxidation behavior of In and Ga, in agreement with thermodynamic reference data, and we find indications for the segregation and removal of copper selenide surface phases from the polycrystalline material.

  3. EFFICIENCY ENHANCEMENT IN THIN-FILM SILICON SOLAR CELLS WITH A PHOTONIC LATTICE

    E-Print Network [OSTI]

    designed antireflection coating. The study and optimization of the PV structure as a function of all into the quasi guided modes of the photonic slab. We compare the efficiency of this structure to that of PV cells layer is over 100 microns, and the cost of the silicon is more than a half of the total cost

  4. Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

    DOE Patents [OSTI]

    Ramanathan, Kannan V. (Lakewood, CA); Contreras, Miguel A. (Golden, CA); Bhattacharya, Raghu N. (Littleton, CA); Keane, James (Lakewood, CA); Noufi, Rommel (Golden, CA)

    1999-01-01

    The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

  5. Manipulating hybrid structures of polymer/a-Si for thin film solar cells

    SciTech Connect (OSTI)

    Peng, Ying; He, Zhiqun, E-mail: zhqhe@bjtu.edu.cn, E-mail: J.I.B.Wilson@hw.ac.uk; Zhang, Zhi; Liang, Chunjun [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Diyaf, Adel; Ivaturi, Aruna; Wilson, John I. B., E-mail: zhqhe@bjtu.edu.cn, E-mail: J.I.B.Wilson@hw.ac.uk [SUPA, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)

    2014-03-10

    A series of uniform polymer/amorphous silicon hybrid structures have been fabricated by means of solution-casting for polymer and radio frequency excited plasma enhanced chemical vapour deposition for amorphous silicon (a-Si:H). Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) functioned as a photoactive donor, while the silicon layer acted as an acceptor. It is found that matching the hole mobility of the polymer to the electron mobility of amorphous silicon is critical to improve the photovoltaic performance from hybrid cells. A three-layer p-i-n structure of ITO/PEDOT:PSS(200?nm)/i-Si(450?nm)/n-Si(200?nm)/Al with a power conversion efficiency of 4.78% under a standard test condition was achieved.

  6. High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas in Substitution of CdCl2

    E-Print Network [OSTI]

    Romeo, Alessandro

    High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas a sufficient conversion efficiency to be considered for an industrial application. The fabrication process observed. Solar cell efficiency obtained with this treatment, close to 16%, is comparable if not larger

  7. ZnO/a-Si Distributed Bragg Reflectors for Light Trapping in Thin Film Solar Cells from Visible to Infrared Range

    E-Print Network [OSTI]

    Chen, Aqing; Zhu, Kaigui

    2015-01-01

    Distributed bragg reflectors (DBRs) consisting of ZnO and amorphous silicon (a-Si) were prepared by magnetron sputtering method for selective light trapping. The quarter-wavelength ZnO/a-Si DBRs with only 6 periods exhibit a peak reflectance of above 99% and have a full width at half maximum that is greater than 347 nm in the range of visible to infrared. The 6-pair reversed quarter-wavelength ZnO/a-Si DBRs also have a peak reflectance of 98%. Combination of the two ZnO/a-Si DBRs leads to a broader stopband from 686 nm to 1354 nm. Using the ZnO/a-Si DBRs as the rear reflector of a-Si thin film solar cells significantly increases the photocurrent in the spectrum range of 400 nm to 1000 nm, in comparison with that of the cells with Al reflector. The obtained results suggest that ZnO/a-Si DBRs are promising reflectors of a-Si thin-film solar cells for light trapping.

  8. The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1

    E-Print Network [OSTI]

    as commercially successful, second generation thin film photovoltaic (PV) products, at a production cost of $0 PV technologies, such as Cu(In,Ga)Se2 (CIGS), which has a lower theoretical limit ~26% but a higher involves Cu impurities. The CdTe thin film uses low cost 5N tellurium, which, either as a byproduct

  9. Theoretical Analysis of Effects of Deep Level, Back Contact, and Absorber Thickness on Capacitance-Voltage Profiling of CdTe Thin-Film Solar Cells

    SciTech Connect (OSTI)

    Li, J. V.; Halverson, A. F.; Sulima, O. V.; Bansal, S.; Burst, J. M.; Barnes, T. M.; Gessert, T. A.; Levi, D. H.

    2012-05-01

    The apparent carrier density profile measured by the capacitance-voltage technique in CdTe thin-film solar cells frequently displays a distinctive U-shape. We show that, even assuming a uniform carrier density, such a U-shape may arise from deep levels, a non-ohmic back-contact, and a thin absorber, which are commonly present in practical CdTe thin-film solar cells. A thin CdTe absorber contributes to the right branch of the U-shape due to a punch-through effect at reverse or zero biases, when the CdTe absorber is nearly fully depleted. A rectifying back-contact contributes to both branches of the U-shape due to voltage sharing with the front junction under a forward bias and early punch-through under a reverse bias. Deep levels contribute to the right branch, but also raise the bottom of the U-shape, leading to an overestimate of carrier density.

  10. Enhanced absorption of thin-film photovoltaic cells using an optical cavity

    E-Print Network [OSTI]

    Hsu, Wei-Chun

    We show via numerical simulations that the absorption and solar energy conversion efficiency of a thin-film photovoltaic (PV) cell can be significantly enhanced by embedding it into an optical cavity. A reflective ...

  11. The Effects of Non-Uniform Electronic Properties on Thin Film Photovoltaics

    E-Print Network [OSTI]

    Brown, Gregory Ferguson

    2011-01-01

    Intensity  in  Thin  Film  Solar  Cells   3.2.1   U.  Rau,  EL)  Intensity   in  Thin  Film  Solar  Cells   3.3  properties  of  thin  film  solar  cell   absorbers,  with  

  12. Optimization of Processing and Modeling Issues for Thin-Film Solar Cell Devices; Annual Report, 3 February 1997-2 February 1998

    SciTech Connect (OSTI)

    Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Hegedus, S. S.; McCandless, B. E. (IEC, University of Delaware)

    1998-12-08

    This report describes results achieved during phase I of a four-phase subcontract to develop and understand thin-film solar cell technology associated with CuInSe2 and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE long-range efficiency, reliability, and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for developing viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scale equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development of improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to illumination, temperature, and ambient and with respect to device structure and module encapsulation.

  13. Oxidation of In2S3 films to synthetize In2S3(1-x)O3x thin films as a buffer layer in solar cells

    E-Print Network [OSTI]

    Boyer, Edmond

    for fabricating Cd-free CIGS solar cells [1, 2, 3]. One of its advantages is that it can be obtained from solutionOxidation of In2S3 films to synthetize In2S3(1-x)O3x thin films as a buffer layer in solar cells S layers for solar cells. PACS : 68.55.ag Semiconductors, 68.55.J Morphology of films , 68.55.Nq

  14. Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization

    E-Print Network [OSTI]

    Bielecki, Anthony

    2013-01-01

    film solar cells. CIGS solar cell efficiencies have beenCIGS, making it a favorable choice for thin-film solar cells.thin film solar cell [3]. However, use of CIGS has a number

  15. CuInSe2 and its alloys are the leading choice for absorber layers in high-efficiency thin film solar cells due to their direct gap, high absorption coefficient and

    E-Print Network [OSTI]

    Rockett, Angus

    in CuInSe2. Epitaxial CuInSe2 thin films were deposited on GaAs bicrystal substrates using a hybrid film solar cells due to their direct gap, high absorption coefficient and excellent thermal stability epilayers to the GaAs bicrystal substrate. This allows isolation and optical characterization of individual

  16. Modeling of capacitance transients of thin-film solar cells: A valuable tool to gain information on perturbing layers or interfaces

    SciTech Connect (OSTI)

    Lauwaert, Johan Van Puyvelde, Lisanne; Vrielinck, Henk; Lauwaert, Jeroen; Thybaut, Joris W.

    2014-02-03

    Thin-film electronic and photovoltaic devices often comprise, in addition to the anticipated p-n junctions, additional non-ideal ohmic contacts between layers. This may give rise to additional signals in capacitance spectroscopy techniques that are not directly related to defects in the structure. In this paper, we present a fitting algorithm for transient signals arising from such an additional junction. The fitting results are in excellent agreement with the diode characteristics extracted from static measurements on individual components. Finally, the algorithm is applied for determining the barriers associated with anomalous signals reported for selected CuIn{sub 1–x}Ga{sub x}Se{sub 2} and CdTe solar cells.

  17. Design of anti-ring back reflectors for thin-film solar cells based on three-dimensional optical and electrical modeling

    SciTech Connect (OSTI)

    Hsiao, Hui-Hsin; Wu, Yuh-Renn, E-mail: yrwu@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan (China); Chang, Hung-Chun [Graduate Institute of Photonics and Optoelectronics, Graduate Institute of Communication Engineering, and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan (China)

    2014-08-11

    The optical and electrical properties of a photonic-plasmonic nanostructure on the back contact of thin-film solar cells were investigated numerically through the three-dimensional (3D) finite-difference time-domain method and the 3D Poisson and drift-diffusion solver. The focusing effect and the Fabry-Perot resonances are identified as the main mechanisms for the enhancement of the optical generation rate as well as the short circuit current density. However, the surface topography of certain nanopattern structures is found to reduce the internal electrostatic field of the device, thus limiting charge collection. The optimized conditions for both optics and electronics have been analyzed in this paper.

  18. Nanowire-based All Oxide Solar Cells

    E-Print Network [OSTI]

    Yang, Peidong

    2009-01-01

    toxic elements in some thin film solar cells. The principalsolar cell also employing ZnO nanowires and a Cu 2 O thin film.

  19. Thin-film absorber for a solar collector

    SciTech Connect (OSTI)

    Wilhelm, W.G.

    1982-02-09

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  20. Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study

    SciTech Connect (OSTI)

    Sogabe, Tomah Shoji, Yasushi; Tamayo, Efrain; Okada, Yoshitaka; Mulder, Peter; Schermer, John

    2014-09-15

    We report the fabrication of a thin film InAs/GaAs quantum dot solar cell (QD cell) by applying epitaxial lift-off (ELO) approach to the GaAs substrate. We confirmed significant current collection enhancement (?0.91?mA/cm{sup 2}) in the ELO-InAs QD cell within the wavelength range of 700?nm–900?nm when compared to the ELO-GaAs control cell. This is almost six times of the sub-GaAs bandgap current collection (?0.16?mA/cm{sup 2}) from the wavelength range of 900?nm and beyond, we also confirmed the ELO induced resonance cavity effect was able to increase the solar cell efficiency by increasing both the short circuit current and open voltage. The electric field intensity of the resonance cavity formed in the ELO film between the Au back reflector and the GaAs front contact layer was analyzed in detail by finite-differential time-domain (FDTD) simulation. We found that the calculated current collection enhancement within the wavelength range of 700?nm–900?nm was strongly influenced by the size and shape of InAs QD. In addition, we performed concentrated light photovoltaic study and analyzed the effect of intermediate states on the open voltage under varied concentrated light intensity for the ELO-InAs QD cell.

  1. Multi-resonant silver nano-disk patterned thin film hydrogenated amorphous silicon solar cells for Staebler-Wronski effect compensation

    E-Print Network [OSTI]

    Vora, Ankit; Pearce, Joshua M; Bergstrom, Paul L; Güney, Durdu Ö

    2014-01-01

    We study polarization independent improved light trapping in commercial thin film hydrogenated amorphous silicon (a-Si:H) solar photovoltaic cells using a three-dimensional silver array of multi-resonant nano-disk structures embedded in a silicon nitride anti-reflection coating (ARC) to enhance optical absorption in the intrinsic layer (i-a-Si:H) for the visible spectrum for any polarization angle. Predicted total optical enhancement (OE) in absorption in the i-a-Si:H for AM-1.5 solar spectrum is 18.51% as compared to the reference, and producing a 19.65% improvement in short-circuit current density (JSC) over 11.7 mA/cm2 for a reference cell. The JSC in the nano-disk patterned solar cell (NDPSC) was found to be higher than the commercial reference structure for any incident angle. The NDPSC has a multi-resonant optical response for the visible spectrum and the associated mechanism for OE in i-a-Si:H layer is excitation of Fabry-Perot resonance facilitated by surface plasmon resonances. The detrimental Staebl...

  2. Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations

    E-Print Network [OSTI]

    ://dx.doi.org/10.1063/1.4867008] I. INTRODUCTION A central focus of crystalline silicon (c-Si) solar cell research important evaluation criterion for photovoltaic (PV) technology. Therefore, research on novel structures

  3. Nanostructured thin films for solid oxide fuel cells 

    E-Print Network [OSTI]

    Yoon, Jongsik

    2009-05-15

    The goals of this work were to synthesize high performance perovskite based thin film solid oxide fuel cell (TF-SOFC) cathodes by pulsed laser deposition (PLD), to study the structural, electrical and electrochemical properties of these cathodes...

  4. Durham Workshop, Dec 2005Durham Workshop, Dec 2005 Thin Film Metrology UsingThin Film Metrology Using

    E-Print Network [OSTI]

    Greenaway, Alan

    Durham Workshop, Dec 2005Durham Workshop, Dec 2005 Thin Film Metrology UsingThin Film Metrology Modelling to investigate level of aberrations introduced by thin film structure.introduced by thin film Solar Cells Reflectors Solar Cell Covers Security UV Protection Anti-static Gas Temperature Pressure

  5. Supplementary Material Volumetric plasmonic resonator architecture for thin-film solar

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Supplementary Material Volumetric plasmonic resonator architecture for thin-film solar cells for the top resonator and volumetric resonator architectures (Fig. S1). The results confirm that it is possible to obtain a larger enhancement in the absorptivity using the volumetric architecture. We observe

  6. Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells

    DOE Patents [OSTI]

    Noufi, Rommel (Golden, CO); Gabor, Andrew M. (Boulder, CO); Tuttle, John R. (Denver, CO); Tennant, Andrew L. (Denver, CO); Contreras, Miguel A. (Golden, CO); Albin, David S. (Denver, CO); Carapella, Jeffrey J. (Evergreen, CO)

    1995-01-01

    A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.

  7. Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells

    DOE Patents [OSTI]

    Noufi, R.; Gabor, A.M.; Tuttle, J.R.; Tennant, A.L.; Contreras, M.A.; Albin, D.S.; Carapella, J.J.

    1995-08-15

    A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S){sub 2} comprises depositing a first layer of (In,Ga){sub x} (Se,S){sub y} followed by depositing just enough Cu+(Se,S) or Cu{sub x} (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga){sub x} (Se,S){sub y} is deposited first, followed by deposition of all the Cu+(Se,S) or Cu{sub x} (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu{sub x} (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga){sub x} (Se,S){sub y} to go slightly Cu-poor in the final Cu(In,Ga)(Se,S){sub 2} thin film. 5 figs.

  8. Investigation of the Role of Trap States in Solar Cell Reliability using Photothermal Deflection Spectroscopy

    E-Print Network [OSTI]

    Bezryadina, Anna Sergeyevna

    2012-01-01

    cells are also called thin-film solar cells, which currently10-12% [6]. Thin film solar cells are significantly cheaper,and lightweight, thin film solar cells can be rolled out

  9. Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing

    SciTech Connect (OSTI)

    Albin, D.; del Cueto, J.

    2011-03-01

    In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

  10. Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds

    DOE Patents [OSTI]

    Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

    1983-01-01

    Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.

  11. Research on high-efficiency, multiple-gap, multijunction, amorphous-silicon-based alloy thin-film solar cells

    SciTech Connect (OSTI)

    Guha, S. )

    1989-06-01

    This report presents results of research on advancing our understanding of amorphous-silicon-based alloys and their use in small-area multijunction solar cells. The principal objectives of the program are to develop a broad scientific base for the chemical, structural, optical, and electronic properties of amorphous-silicon-based alloys; to determine the optimum properties of these alloy materials as they relate to high-efficiency cells; to determine the optimum device configuration for multijunction cells; and to demonstrate proof-of-concept, multijunction, a-Si-alloy-based solar cells with 18% efficiency under standard AM1.5 global insolation conditions and with an area of at least 1 cm{sup 2}. A major focus of the work done during this reporting period was the optimization of a novel, multiple-graded structure that enhances cell efficiency through band-gap profiling. The principles of the operation of devices incorporating such a structure, computer simulations of those, and experimental results for both single- and multijunction cells prepared by using the novel structure are discussed in detail. 14 refs., 35 figs., 7 tabs.

  12. Photovoltaic mechanisms in polycrystalline thin film silicon solar cells. Final report, 30 June 1979-29 June 1980

    SciTech Connect (OSTI)

    Sopori, B.L.

    1980-11-01

    The objectives of this program were: (1) to develop appropriate measurement techniques to facilitate a quantitative study of the electrical activity of structural defects and at a grain boundary (G.B.) in terms of generation-recombination, barrier height, and G.B. conductivity; (2) to characterize G.B.s in terms of physical properties such as angle of misfit and local stress, and to correlate them with the electrical activity; (3) to determine the influence of solar cell processing on the electrical behavior of structural defects and G.B.s; and (4) to evaluate polycrystalline solar cell performance based on the above study, and to compare it with the experimentally measured performance. Progress is reported in detail. (WHK)

  13. Effect of Dual-Function Nano-Structured Silicon Oxide Thin Film on Multi-Junction Solar Cells

    SciTech Connect (OSTI)

    Yan, B.; Sivec, L.; Yue, G.; Jiang, C. S.; Yang, J.; Guha, S.

    2011-01-01

    We present our recent study of using nano-structured hydrogenated silicon oxide films (nc-SiO{sub x}:H) as a dual-function layer in multi-junction solar cells. The nc-SiO{sub x}:H films were deposited using very high frequency glow discharge of a SiH{sub 4} (or Si{sub 2}H{sub 6}), CO{sub 2}, PH{sub 3}, and H{sub 2} gas mixture. By optimizing deposition parameters, we obtained 'dual function' nc-SiO{sub x}:H material characterized by a conductivity suitable for use as an n layer and optical properties suitable for use as an inter-reflection layer. We tested the nc-SiO{sub x}:H by replacing the normal n-type material in the tunnel junction of a multi-junction structure. The advantage of the dual-function nc-SiO{sub x}:H layer is twofold; one is to simplify the cell structure, and the other is to reduce any optical loss associated with the inter-reflection layer. Quantum efficiency measurements show the gain in top cell current is equal to or greater than the loss in bottom cell current for a-Si:H/nc-Si:H structures. In addition, a thinner a-Si:H top cell with the nc-SiO{sub x}:H n layer improves the top-cell stability, thereby providing higher stabilized solar cell efficiency. We also used the dual-function layer between the middle and the bottom cells in a-Si:H/a-SiGe:H/nc-Si:H triple-junction structures. The gain in the middle cell current is {approx}1.0 mA/cm{sup 2}, leading to an initial active-area efficiency of 14.8%.

  14. Processing-Dependent Growth Mechanisms and Performance Improvement of Kesterite Solar Cells

    E-Print Network [OSTI]

    Hsu, Wan-Ching

    2014-01-01

    Cu2ZnSnS,Se4 Thin-Film Solar Cells Prepared from Binary andW. N. Shafarman, “Thin-film solar cells: device measurementsof CZTSSe Thin-Film Solar Cells with 12.6% Efficiency,” Adv.

  15. Photonic Design: From Fundamental Solar Cell Physics to Computational Inverse Design

    E-Print Network [OSTI]

    Miller, Owen Dennis

    2012-01-01

    design setup for thin-film solar cell. An initial anti-in randomly textured thin-film solar cells,” Optics Express,tion enhancement in thin-film solar cells using whispering

  16. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01

    to integrate thin-film solar cells and batteries (2)methods for thin-film solar cells and batteries (4) Developamorphous silicon thin-film solar cell. Part number TX3-25

  17. Lead selenide nanowire solar cells via LPNE and its new found derivatives

    E-Print Network [OSTI]

    Hujdic, Justin

    2012-01-01

    absorption in a thin film solar cell; An AM1.5 filter solarin a thin film solar cell………………………………………………………………17 Figuregeometries for thin-film solar cells: (a) Light trapping by

  18. Method for producing textured substrates for thin-film photovoltaic cells

    DOE Patents [OSTI]

    Lauf, Robert J. (Oak Ridge, TN)

    1994-01-01

    The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells.

  19. Method for producing textured substrates for thin-film photovoltaic cells

    DOE Patents [OSTI]

    Lauf, Robert J. (Oak Ridge, TN)

    1996-01-01

    The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells.

  20. Method for producing textured substrates for thin-film photovoltaic cells

    DOE Patents [OSTI]

    Lauf, R.J.

    1994-04-26

    The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells. 4 figures.

  1. Method for producing textured substrates for thin-film photovoltaic cells

    DOE Patents [OSTI]

    Lauf, R.J.

    1996-04-02

    The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells. 4 figs.

  2. Use of 2nd and 3rd Level Correlation Analysis for Studying Degradation in Polycrystalline Thin-Film Solar Cells

    SciTech Connect (OSTI)

    Albin, D. S.; del Cueto, J. A.; Demtsu, S. H.; Bansal, S.

    2011-03-01

    The correlation of stress-induced changes in the performance of laboratory-made CdTe solar cells with various 2nd and 3rd level metrics is discussed. The overall behavior of aggregated data showing how cell efficiency changes as a function of open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF) is explained using a two-diode, PSpice model in which degradation is simulated by systematically changing model parameters. FF shows the highest correlation with performance during stress, and is subsequently shown to be most affected by shunt resistance, recombination and in some cases voltage-dependent collection. Large decreases in Jsc as well as increasing rates of Voc degradation are related to voltage-dependent collection effects and catastrophic shunting respectively. Large decreases in Voc in the absence of catastrophic shunting are attributed to increased recombination. The relevance of capacitance-derived data correlated with both Voc and FF is discussed.

  3. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual subcontract report, 20 March 1992--19 March 1993

    SciTech Connect (OSTI)

    Trefny, J.U.; Furtak, T.E.; Wada, N.; Williamson, D.L.; Kim, D.

    1993-08-01

    This report describes progress during the first year of a 3-year program at Colorado School of Mines, based upon earlier studies performed by Ametek Corporation, to develop specific layers of the Ametek n-i-p structure as well as additional studies of several transparent conducting oxides. Thin films of ZnO and ZnO:Al were deposited under various conditions. For the n-layer of the Ametek structure, a dip-coating method was developed for the deposition of CdS films. The authors also present data on the characterization of these films by X-ray diffraction, Raman spectroscopy, scanning tunneling microscopy, small-angle X-ray scattering, and other techniques. They made progress in the electrodeposition of the CdTe i-layer of the Ametek structure. They developed appropriate electrochemical baths and are beginning to understand the role of the many experimental parameters that must be controlled to obtain high-quality films of this material. They explored the possibility of using an electrochemical process for fabricating the ZnTe p-layer. Some preliminary success was achieved, and this step will be pursued in the next phase. Finally, they fabricated a number of ``dot`` solar cells with the structure glass/SnO{sub 2}/CdS/CdTe/Au. Several cells with efficiencies in the range of 5%-6% were obtained, and they are confident, given recent progress, that cells with efficiencies in excess of 10% will be achieved in the near future.

  4. Thin Film Solar Technologies | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EISTJThin Film Solar Technologies Jump to: navigation, search Name: Thin

  5. Novel Materials Development for Polycrystalline Thin-Film Solar Cells: Final Subcontract Report, 26 July 2004--15 June 2008

    SciTech Connect (OSTI)

    Keszler, D. A.; Wager, J. F.

    2008-11-01

    Focus on player interfacial assessment using Schottky barrier and heterojunction theory, and analysis of p-windows for CIGS and CdTe cells.

  6. Solar Energy Materials & Solar Cells 92 (2008) 821829 Modeling the optical properties of WO3 and WO3SiO2 thin films

    E-Print Network [OSTI]

    Thirumalai, Devarajan

    2008-01-01

    Solar Energy Materials & Solar Cells 92 (2008) 821­829 Modeling the optical properties of WO3 the optical response of the films in the near-UV and visible region: two interband transitions for energies E

  7. MEMS-based thin-film fuel cells

    DOE Patents [OSTI]

    Jankowksi, Alan F.; Morse, Jeffrey D.

    2003-10-28

    A micro-electro-mechanical systems (MEMS) based thin-film fuel cells for electrical power applications. The MEMS-based fuel cell may be of a solid oxide type (SOFC), a solid polymer type (SPFC), or a proton exchange membrane type (PEMFC), and each fuel cell basically consists of an anode and a cathode separated by an electrolyte layer. Additionally catalyst layers can also separate the electrodes (cathode and anode) from the electrolyte. Gas manifolds are utilized to transport the fuel and oxidant to each cell and provide a path for exhaust gases. The electrical current generated from each cell is drawn away with an interconnect and support structure integrated with the gas manifold. The fuel cells utilize integrated resistive heaters for efficient heating of the materials. By combining MEMS technology with thin-film deposition technology, thin-film fuel cells having microflow channels and full-integrated circuitry can be produced that will lower the operating temperature an will yield an order of magnitude greater power density than the currently known fuel cells.

  8. Low work function, stable thin films

    DOE Patents [OSTI]

    Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

    2000-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  9. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01

    of thin- film Li-ion batteries under flexural deflection,”thin-film solar cells and batteries (2) Characterizesolar cells and batteries for multifunctional performance (

  10. RANDOM DEPOSITION MODEL OF CDS LAYER IN CDS/CDTE THINFILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    THESIS RANDOM DEPOSITION MODEL OF CDS LAYER IN CDS/CDTE THIN­FILM SOLAR CELLS Submitted by Lei Chen LAYER IN CDS/CDTE THIN­FILM SOLAR CELLS BE AC- CEPTED AS FULFILLING IN PART REQUIREMENTS FOR THE DEGREE MODEL OF CDS LAYER IN CDS/CDTE THIN­FILM SOLAR CELLS Thin­film solar cells are developing dramatically

  11. Optimized Designs and Materials for Nanostructure Based Solar Cells

    E-Print Network [OSTI]

    Shao, Qinghui

    2009-01-01

    the production cost, thin film solar cells with only a fewstate-of-the-art thin film solar cell design and processingintermediate band solar cell,” Thin Solid Films, 511-512,

  12. Fabrication and Characterization of Organic Solar Cells

    E-Print Network [OSTI]

    Yengel, Emre

    2010-01-01

    Cu(InGa)Se-2 thin- film solar cells with ZnSe buffer layers.Stability of CdTe/CdS thin-film solar cells. Sol Energ MatThis so called ‘thin filmsolar cell technology was first

  13. Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization

    E-Print Network [OSTI]

    Bielecki, Anthony

    2013-01-01

    Research, Thin-Film Photovoltaic (PV) Cells Market Analysiscost of photovoltaic systems (such as solar cells) due tosolar cells are created by depositing layers of photovoltaic

  14. Influence of different sulfur to selenium ratios on the structural and electronic properties of Cu(In,Ga)(S,Se){sub 2} thin films and solar cells formed by the stacked elemental layer process

    SciTech Connect (OSTI)

    Mueller, B. J.; Zimmermann, C.; Haug, V. Koehler, T.; Zweigart, S.; Hergert, F.; Herr, U.

    2014-11-07

    In this study, we investigate the effect of different elemental selenium to elemental sulfur ratios on the chalcopyrite phase formation in Cu(In,Ga)(S,Se){sub 2} thin films. The films are formed by the stacked elemental layer process. The structural and electronic properties of the thin films and solar cells are analyzed by means of scanning electron microscopy, glow discharge optical emission spectrometry, X-ray diffraction, X-ray fluorescence, Raman spectroscopy, spectral photoluminescence as well as current-voltage, and quantum efficiency measurements. The influence of different S/(S+Se) ratios on the anion incorporation and on the Ga/In distribution is investigated. We find a homogenous sulfur concentration profile inside the film from the top surface to the bottom. External quantum efficiency measurements show that the band edge of the solar cell device is shifted to shorter wavelength, which enhances the open-circuit voltages. The relative increase of the open-circuit voltage with S/(S+Se) ratio is lower than expected from the band gap energy trend, which is attributed to the presence of S-induced defects. We also observe a linear decrease of the short-circuit current density with increasing S/(S+Se) ratio which can be explained by a reduced absorption. Above a critical S/(S+Se) ratio of around 0.61, the fill factor drops drastically, which is accompanied by a strong series resistance increase which may be attributed to changes in the back contact or p-n junction properties.

  15. Effects of Cu Diffusion from ZnTe:Cu/Ti Contacts on Carrier Lifetime of CdS/CdTe Thin Film Solar Cells: Preprint

    SciTech Connect (OSTI)

    Gessert, T. A.; Metzger, W. K.; Asher, S. E.; Young, M. R.; Johnston, S.; Dhere, R. G.; Duda, A.

    2008-05-01

    We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime in the CdTe layer is affected by Cu diffusion from the contact.

  16. Rapid Deposition Technology Holds the Key for the World's Largest Manufacturer of Thin-Film Solar Modules (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-08-01

    First Solar, Inc. has been collaborating with NREL since 1991, advancing its thin-film cadmium telluride solar technology to grow from a startup company to become one of the world's largest manufacturers of solar modules, and the world's largest manufacturer of thin-film solar modules.

  17. Optimized Designs and Materials for Nanostructure Based Solar Cells

    E-Print Network [OSTI]

    Shao, Qinghui

    2009-01-01

    the-art thin film solar cell design and processing becauseto incorporate into the solar cell design the materials withor conventional tandem solar cell designs. The physical

  18. Light trapping in plasmonic solar cells Albert Polman

    E-Print Network [OSTI]

    Polman, Albert

    light management team #12;Light is poorly absorbed in a thin-film solar cell Solar spectrum absorbed Management #12;Light trapping in a thin-film solar cell Nature Mater. 9, 205 (2010) #12;Back contact thin-film solar cell Optimum = closest packed Experiments so far Pitch (nm) Wavelength(nm) Photocurrent

  19. Simulations of solar cell absorption enhancement using resonant modes

    E-Print Network [OSTI]

    Grandidier, Jonathan

    for enhancing the absorption of thin-film amorphous silicon solar cells using periodic arrangements of resonant,7 Dielectric nanospheres are promising structures for light trapping in planar, thin-film solar cells. It has a thin-film a-Si solar cell structure featuring back reflector and optimized anti-reflection coating. We

  20. EFFECT OF HYDROGEN ON SURFACE TEXTURING AND CRYSTALLIZATION ON A-SI:H THIN FILM IRRADIATED BY EXCIMER LASER

    E-Print Network [OSTI]

    Yao, Y. Lawrence

    -Si:H thin film solar cell applications. Introduction Many industrial solar cells in use today use bulk and instability, thin-film a- Si:H solar cells require a highly efficient light-trapping design to absorb cell applications. In this study, hydrogenated and dehydrogenated amorphous silicon thin films

  1. Thin films of mixed metal compounds

    DOE Patents [OSTI]

    Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  2. Thin-film flat-plate solar collectors for low-cost manufacture and installation

    SciTech Connect (OSTI)

    Andrews, J.W.; Wilhelm, W.G.

    1980-03-01

    A flat-plate solar energy collector design using thin-film plastics in both the absorber and glazing is described. The design approach proceeded in two steps. First, cost constraints on solar collectors were determined using reasonable economic projections. Second, engineering was applied only to those ideas which had hope of falling within those cost boundaries. The use of thin-film plastics appeared most attractive according to these criteria. The nature of the marketing and distribution network can be expected to have a strong impact on the final installed cost of the collector; the proposed design has characteristics which could make possible a reduced price markup.

  3. Modeling and simulation of CuIn{sub 1?x}Ga{sub x}Se{sub 2} based thin film solar cell

    SciTech Connect (OSTI)

    Kumari, S., E-mail: sarita.kumari132@gmail.com; Verma, A. S. [Department of Physics, Banasthali University, Rajasthan-304022 (India); Singh, P.; Gautam, R. [Department of Electronics and Communication, Krishna Institute of Engg. and Tech., Ghaziabad-201206 (India)

    2014-04-24

    In this work, CIGS (Copper Indium Gallium Diselenide) based solar cell structure has been simulated. We have been calculated short circuit current, open circuit voltage and efficiency of the cell. The thickness of the absorption layer is varied from 400 to 3000 nm, keeping the thickness of other layers unchanged. The effect of absorption layer thickness over cell performance has been analyzed and found that the efficiency increases upto 22% until the thickness of the absorption layer reaches around 2000 nm.

  4. Development of high-efficiency, thin-film CdTe solar cells. Final subcontract report, 1 February 1992--30 November 1995

    SciTech Connect (OSTI)

    Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Inst. of Tech., Atlanta, GA (United States)

    1996-01-01

    This report describes work performed by the Georgia Institute of Technology (GIT) to bring the polycrystalline CdTe cell efficiency a step closer to the practically achievable efficiency of 18% through fundamental understanding of detects and loss mechanisms, the role of chemical and heat treatments, and investigation of now process techniques. The objective was addressed by a combination of in-depth characterization, modeling, materials growth, device fabrication, and `transport analyses of Au/Cu/CdTe/CdS/SnO {sub 2} glass front-wall heterojunction solar cells. GiT attempted to understand the loss mechanism(s) in each layer and interface by a step-by-step investigation of this multilayer cell structure. The first step was to understand, quantify, and reduce the reflectance and photocurrent loss in polycrystalline CdTe solar calls. The second step involved the investigation of detects and loss mechanisms associated with the CdTe layer and the CdTe/CdS interface. The third stop was to investigate the effect of chemical and heat treatments on CdTe films and cells. The fourth step was to achieve a better and reliable contact to CdTe solar cells by improving the fundamental understanding. Of the effects of Cu on cell efficiency. Finally, the research involved the investigation of the effect of crystallinity and grain boundaries on Cu incorporation in the CdTe films, including the fabrication of CdTe solar calls with larger CdTe grain size.

  5. Ames Lab 101: Improving Solar Cell Efficiency

    ScienceCinema (OSTI)

    Biswas, Rana

    2012-08-29

    Rana Biswas, a scientist with the Ames Laboratory, discusses his team's research in creating more efficient solar cells and working with Iowa Thin Film to produce these cells.

  6. Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface

    SciTech Connect (OSTI)

    Bar, M.; Wimmer, M.; Wilks, R. G.; Roczen, M.; Gerlach, D.; Ruske, F.; Lips, K.; Rech, B.; Weinhardt, L.; Blum, M.; Pookpanratana, S.; Krause, S.; Zhang, Y.; Heske, C.; Yang, W.; Denlinger, J. D.

    2010-04-30

    The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5+2)nm after SPC could be estimated.

  7. Preparation of W-Ta thin-film thermocouple on diamond anvil cell...

    Office of Scientific and Technical Information (OSTI)

    Preparation of W-Ta thin-film thermocouple on diamond anvil cell for in-situ temperature measurement under high pressure Citation Details In-Document Search Title: Preparation of...

  8. PV prospects: thinPV prospects: thin--film cellsfilm cells Si cell costs

    E-Print Network [OSTI]

    Pulfrey, David L.

    1 PV prospects: thinPV prospects: thin--film cellsfilm cells LECTURE 8 · Si cell costs · optimizing://www.solarbuzz.com/Moduleprices.htm #12;6 Cost of PV modulesCost of PV modules The lowest retail price for a multicrystalline silicon

  9. High-Rate Fabrication of a-Si-Based Thin-Film Solar Cells Using Large-Area VHF PECVD Processes

    SciTech Connect (OSTI)

    Deng, Xunming; Fan, Qi Hua

    2011-12-31

    The University of Toledo (UT), working in concert with it’s a-Si-based PV industry partner Xunlight Corporation (Xunlight), has conducted a comprehensive study to develop a large-area (3ft x 3ft) VHF PECVD system for high rate uniform fabrication of silicon absorber layers, and the large-area VHF PECVD processes to achieve high performance a-Si/a-SiGe or a-Si/nc-Si tandem junction solar cells during the period of July 1, 2008 to Dec. 31, 2011, under DOE Award No. DE-FG36-08GO18073. The project had two primary goals: (i) to develop and improve a large area (3 ft × 3 ft) VHF PECVD system for high rate fabrication of > = 8 Å/s a-Si and >= 20 Å/s nc-Si or 4 Å/s a-SiGe absorber layers with high uniformity in film thicknesses and in material structures. (ii) to develop and optimize the large-area VHF PECVD processes to achieve high-performance a-Si/nc-Si or a-Si/a-SiGe tandem-junction solar cells with >= 10% stable efficiency. Our work has met the goals and is summarized in “Accomplishments versus goals and objectives”.

  10. The impact of oxygen incorporation during intrinsic ZnO sputtering on the performance of Cu(In,Ga)Se{sub 2} thin film solar cells

    SciTech Connect (OSTI)

    Lee, Kkotnim; Ok, Eun-A; Park, Jong-Keuk; Kim, Won Mok; Baik, Young-Joon; Jeong, Jeung-hyun; Kim, Donghwan

    2014-08-25

    We investigated the impact of incorporating 2% oxygen during intrinsic ZnO sputtering on the efficiency of Cu(In,Ga)Se{sub 2} solar cells. The added oxygen not only reduced the optical absorption loss of the Al-doped ZnO overlaying layer but also improved the electronic properties of the underlying CdS/Cu(In,Ga)Se{sub 2} by increasing carrier density, lowering defect level, and increasing diffusion length, eventually enhancing J{sub SC}, V{sub OC}, and fill factor. It was found that the Na doping concentration was significantly increased around the CdS/Cu(In,Ga)Se{sub 2} junction due to the plasma-activated oxygen. The improved electronic properties are better explained by the increased Na concentration than simply the oxygen-related defect passivation.

  11. Nanostructured Thin Film Electrolyte for Thin Film Solid Oxide Fuel Cells 

    E-Print Network [OSTI]

    Cho, Sungmee

    2012-10-19

    Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because they are clean, reliable, and almost entirely pollution-free. SOFCs have flexible fuel selections compared with other fuel cell technologies. The main...

  12. Anode-supported thin-film fuel cells operated in a single chamber configuration 2T-I-12

    E-Print Network [OSTI]

    Haile, Sossina M.

    on the anode, producing a complex response in fuel cell power output. Under optimized gas compositions and flowAnode-supported thin-film fuel cells operated in a single chamber configuration 2T-I-12 Zongping of anode-supported, thin-film, single chamber fuel cells (SCFCs) have been investigated. Cells, in which Ni

  13. DISSERTATION ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE

    E-Print Network [OSTI]

    Sites, James R.

    i DISSERTATION ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT Submitted ENTITLED `ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT' BE ACCEPTED(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT The demand for alternative sources of energy is rapidly

  14. The Design of Organic Polymers and Small Molecules to Improve the Efficiency of Excitonic Solar Cells

    E-Print Network [OSTI]

    Armstrong, Paul Barber

    2010-01-01

    information in hand, thin film solar cells (glass/ITO/PEDOT:in the zoom-in. Thin film solar cells (glass/ITO/PEDOT:PSS/thin film absorbance, are 1.50 eV for both polymers, close to the ideal value for a single layer solar cell.

  15. Simulations of solar cell absorption enhancement using resonant modes of a nanosphere array

    E-Print Network [OSTI]

    Grandidier, Jonathan

    an approach for enhancing the absorption of thin-film amorphous silicon solar cells using periodic for light trapping in planar thin-film solar cells. It has recently been shown that freely propagating finite difference time domain (FDTD) simulations of a nanosphere array above a thin-film a-Si solar cell

  16. Development of an IR-transparent, inverted-grown, thin-film, Al[sub 0. 34]Ga[sub 0. 66]As/GaAs cascade solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R.; Timmons, M.L.; Sharps, P.R.; Colpitts, T.S.; Hills, J.S.; Hancock, J.; Hutchby, J.A. )

    1992-12-01

    Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a fully-processed, inverted-grown, thin film GaAs cell with a 1-sun AM1.5 efficiency of 20.3%. Also, an inverted-grown, thin-film, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiencies of 19.9% and 21% at 1-sun and 7-suns, respectively, has been obtained.

  17. Project Profile: Development and Productization of High-Efficiency, Low-Cost Building-Integrated PV Shingles Using Monocrystalline Silicon Thin-Film Solar Cells

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Solexel-OC team is developing a BIPV roofing shingle product that includes low-profile solar modules and a unique attachment system that will be fastened directly to the roof and incorporates...

  18. Low-Cost Light Weigh Thin Film Solar Concentrators

    Broader source: Energy.gov [DOE]

    This presentation was delivered at the SunShot Concentrating Solar Power (CSP) Program Review 2013, held April 23–25, 2013 near Phoenix, Arizona.

  19. An Unconventional Route to High-Efficiency Dye-Sensitized Solar Cells via Embedding Graphitic Thin Films into TiO2 Nanoparticle

    E-Print Network [OSTI]

    Lin, Zhiqun

    120-750, Korea School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States # Department of Materials Science and Engineering, Iowa State University production due to their high solar energy conversion efficiency as well as relatively low fabrication cost.1

  20. The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact

    SciTech Connect (OSTI)

    Gerlach, D.; Wilks, R. G.; Wimmer, M.; Felix, R.; Gorgoi, M.; Lips, K.; Rech, B.; Wippler, D.; Mueck, A.; Meier, M.; Huepkes, J.; Lozac'h, M.; Ueda, S.; Sumiya, M.; Yoshikawa, H.; Kobayashi, K.; Baer, M.

    2013-07-08

    The electronic structure of the interface between the boron-doped oxygenated amorphous silicon 'window layer' (a-SiO{sub x}:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon ({mu}c-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (-2.87 {+-} 0.27) eV and (-3.37 {+-} 0.27) eV, respectively. A lower tunnel junction barrier height at the {mu}c-Si:H(B)/ZnO:Al interface compared to that at the a-SiO{sub x}:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a {mu}c-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.

  1. EE580 Solar Cells Todd J. Kaiser

    E-Print Network [OSTI]

    Kaiser, Todd J.

    7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 06 · Solar Cell Materials & Structures 1Montana State University: Solar Cells Lecture 6: Solar Cells Solar Cell Technologies · A) Crystalline Silicon · B) Thin Film · C) Group III-IV Cells 2Montana State University: Solar Cells Lecture 6: Solar

  2. Generation of low work function, stable compound thin films by laser ablation

    DOE Patents [OSTI]

    Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

    2001-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  3. Thin film photovoltaic device

    DOE Patents [OSTI]

    Catalano, A.W.; Bhushan, M.

    1982-08-03

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  4. Thin film photovoltaic device

    DOE Patents [OSTI]

    Catalano, Anthony W. (Wilmington, DE); Bhushan, Manjul (Wilmington, DE)

    1982-01-01

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  5. SOLAR CELLS FABRICATED WTH CuInS2 FILMS DEPOSITED USING SINGLE-SOURCE PRECURSORS Michael H. Jin1,3

    E-Print Network [OSTI]

    Scofield, John H.

    report a chalcopyrite thin film solar cell fabrication process established at NASA Glenn Research Center benefit of enabling roll-to-roll processing [3]. The first major thin film solar cell was the "CdS solar, however, remain below 15 % [8]. Several groups have attempted to fabricate thin film solar cells on metal

  6. Fabrication and Characterization of Organic Solar Cells

    E-Print Network [OSTI]

    Yengel, Emre

    2010-01-01

    CdTe/CdS thin-film solar cells. Sol Energ Mat Sol C. 2000;p/n-junction solar cells. Sol Energ Mat Sol C. Wohrle D,

  7. Structure of All-Polymer Solar Cells Impedes Efficiency

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    thin films of semiconducting polymers as a possible alternative to silicon-based solar cells. Such devices would have the advantages of being cheap to produce,...

  8. High-efficiency thin-film cadmium telluride photovoltaic cells. Annual technical report, January 20, 1996--January 19, 1997

    SciTech Connect (OSTI)

    Compaan, A.D.; Bohn, R.G.; Contreras-Puente, G. [Univ. of Toledo, OH (United States)] [Univ. of Toledo, OH (United States)

    1997-08-01

    The University of Toledo photovoltaics group has been instrumental in developing rf sputtering for CDs/CdTe thin-film solar cells. During the third phase of the present contract our work focussed on efforts to determine factors which limit the efficiency in our {open_quotes}all-sputtered{close_quotes} thin-film CdTe solar cells on soda-lime glass. We find that our all-sputtered cells, which are deposited at substantially lower temperature than those by sublimation or vapor deposition, require less aggressive CdCl{sub 2} treatments than do other deposition techniques and this is presumably related to CDs/CdTe interdiffusion. The CDs/CdTe interdiffusion process has been studied by several methods, including photoluminescence and capacitance-voltage measurements. Furthermore, we have deposited special thin bilayer films on quartz and borosilicate glass. Interdiffusion in these thin bilayers have been probed by Rutherford backscattering, with collaborators at Case Western Reserve University, and grazing incidence x-ray scattering (GIXS), with collaborators at the University at Buffalo and Brookhaven National Lab. Also, in order better to understand the properties of the ternary alloy material, we used laser physical vapor deposition to prepare a series of CdS{sub x}Te{sub 1-x} films on borosilicate glass. The composition of the alloy films was determined by wavelength dispersive x-ray spectroscopy at NREL. These films are currently being investigated by us and other groups at NREL and IEC.

  9. Antimony-Doped Tin(II) Sulfide Thin Films

    E-Print Network [OSTI]

    Chakraborty, Rupak

    Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin ...

  10. Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing

    E-Print Network [OSTI]

    properties to further improve the performance of thin-film solar cells using earth- abundant and non) is one of the most reliable materials used in thin-film solar cells, but currently the most efficient CIGS-based solar cells use CdS,1,2 a toxic material, as an n-type buffer layer between the p-type CIGS

  11. Solar Energy Materials & Solar Cells 90 (2006) 34073415 High-efficiency flexible CdTe solar cells

    E-Print Network [OSTI]

    Romeo, Alessandro

    2006-01-01

    Solar Energy Materials & Solar Cells 90 (2006) 3407­3415 High-efficiency flexible CdTe solar cells: Solar cells; Thin films; CdTe; Flexible solar cells; Space solar cells; Solar energy ARTICLE IN PRESS for Renewable Energy Systems and Technology), Department of Electronic and Electrical Engineering, Loughborough

  12. The research field of thin-film photovoltaics of the department of energy-and semiconductor research (EHF) of the institute of physics at the Carl-von-Ossietzky University of Oldenburg

    E-Print Network [OSTI]

    Peinke, Joachim

    The research field of thin-film photovoltaics of the department of energy- and semiconductor and calibration of an optical simulation for thin-film solar cells In recent years, the photovoltaic has become is necessary to let photovoltaic remain economical attractive. Thin-film solar cells on basis of Cu(In,Ga)Se2

  13. Nanoengineered Thin Films for Solid Oxide Fuel Cells 

    E-Print Network [OSTI]

    Su, Qing

    2013-11-21

    Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because of their high energy efficiency, flexible fuel selections and clean energy conversion. To avoid cell cracking and formation of non-conducting compounds...

  14. Photonic Design: From Fundamental Solar Cell Physics to Computational Inverse Design

    E-Print Network [OSTI]

    Miller, Owen Dennis

    2012-01-01

    method to a new solar cell design: a thin-film solar cell incharacterize and design next-generation solar cells. Chapterlies with optical design: The solar cell must be designed

  15. Photovoltaic Polycrystalline Thin-Film Cell Basics | Department...

    Broader source: Energy.gov (indexed) [DOE]

    cells can usually be manufactured in a large-area process, which can be an automated, continuous production process. Finally, they can be deposited on flexible substrate...

  16. Enhancing solar cells with plasmonic nanovoids

    E-Print Network [OSTI]

    Lal, Niraj Narsey

    2012-07-03

    This thesis explores the use of plasmonic nanovoids for enhancing the efficiency of thin-film solar cells. Devices are fabricated inside plasmonically resonant nanostructures, demonstrating a new class of plasmonic photovoltaics. Novel cell...

  17. ENI Renewable and Non-conventional Energy Prize 2012 High-efficiency solar cells based on nanophotonic design

    E-Print Network [OSTI]

    Polman, Albert

    demonstrated ultra-thin silicon solar cells on glass, world-record efficiency thin-film GaAs solar cells to solar cell design are applicable to other solar cell technologies as well, including thin-film CuInSe2ENI Renewable and Non-conventional Energy Prize 2012 High-efficiency solar cells based

  18. Development of a cell culture surface conversion technique using alginate thin film for evaluating effect upon cellular differentiation

    SciTech Connect (OSTI)

    Nakashima, Y.; Tsusu, K.; Minami, K.; Nakanishi, Y.

    2014-06-15

    Here, we sought to develop a cell culture surface conversion technique that would not damage living cells. An alginate thin film, formed on a glass plate by spin coating of sodium alginate solution and dipping into calcium chloride solution, was used to inhibit adhesion of cells. The film could be removed by ethylenediaminetetraacetate (EDTA) at any time during cell culture, permitting observation of cellular responses to conversion of the culture surface in real time. Additionally, we demonstrated the validity of the alginate thin film coating method and the performance of the film. The thickness of the alginate thin film was controlled by varying the rotation speed during spin coating. Moreover, the alginate thin film completely inhibited the adhesion of cultured cells to the culture surface, irrespective of the thickness of the film. When the alginate thin film was removed from the culture surface by EDTA, the cultured cells adhered to the culture surface, and their morphology changed. Finally, we achieved effective differentiation of C2C12 myoblasts into myotube cells by cell culture on the convertible culture surface, demonstrating the utility of our novel technique.

  19. Detailed Balance Analysis and Enhancement of Open-Circuit Voltage in Single-Nanowire Solar Cells

    E-Print Network [OSTI]

    Fan, Shanhui

    of a thin film GaAs cell,20 a thin film GaAs cell with gratings,16 and a cell with a photonic crystal top- voltaics.1-3 Compared with traditional thin-film solar cells,4,5 the advantage of the nanowire cells out such a detailed balance analysis of a single nanowire solar cell, using gallium arsenide (GaAs

  20. Advanced Materials and Nano Technology for Solar Cells

    E-Print Network [OSTI]

    Han, Tao

    2014-01-01

    http://rredc.nrel.gov/solar/spectra/am1.5/ASTMG173/ASTMG173.CdTe and CIGS thin-film solar cells: highlights and4.57) Eduardo Lorenzo (1994). Solar Electricity: Engineering

  1. Method for transferring thermal energy and electrical current in thin-film electrochemical cells

    DOE Patents [OSTI]

    Rouillard, Roger (Beloeil, CA); Domroese, Michael K. (South St. Paul, MN); Hoffman, Joseph A. (Minneapolis, MN); Lindeman, David D. (Hudson, WI); Noel, Joseph-Robert-Gaetan (St-Hubert, CA); Radewald, Vern E. (Austin, TX); Ranger, Michel (Lachine, CA); Sudano, Anthony (Laval, CA); Trice, Jennifer L. (Eagan, MN); Turgeon, Thomas A. (Fridley, MN)

    2003-05-27

    An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

  2. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

    1998-05-19

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

  3. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

    1998-01-01

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  4. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

    1999-01-01

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  5. Thin film heterojunction photovoltaic cells and methods of making the same

    DOE Patents [OSTI]

    Basol, Bulent M. (Los Angeles, CA); Tseng, Eric S. (Los Angeles, CA); Rod, Robert L. (Los Angeles, CA)

    1983-06-14

    A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250.degree. C. and 500.degree. C. for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.

  6. Theory of Current Transients in Planar Semiconductor Devices: Insights and Applications to Organic Solar Cells

    E-Print Network [OSTI]

    Hawks, SA; Finck, BY; Schwartz, BJ

    2015-01-01

    impurity level for organic solar cells: Enhanced first-orderbulk heterojunction solar cells, Adv. Funct. Mater. 21,shunt leakage in thin-film solar cells, J. Appl. Phys. 108,

  7. 554 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 4, NO. 2, MARCH 2014 Light Trapping in Thin Crystalline Si Solar Cells

    E-Print Network [OSTI]

    Polman, Albert

    --Dielectric nanoparticles placed on top of a thin-film solar cell strongly enhance light absorption in the cell over a broad to the fab- rication of thin-film c-Si solar cells on glass substrates by liquid phase crystallization [1 into thin (1­100 m) crystalline Si solar cells patterned with Si nanocylinder arrays on top of the cell. We

  8. General method for simultaneous optimization of light trapping and carrier collection in an ultra-thin film organic photovoltaic cell

    SciTech Connect (OSTI)

    Tsai, Cheng-Chia Grote, Richard R.; Beck, Jonathan H.; Kymissis, Ioannis; Osgood, Richard M.; Englund, Dirk

    2014-07-14

    We describe a general method for maximizing the short-circuit current in thin planar organic photovoltaic (OPV) heterojunction cells by simultaneous optimization of light absorption and carrier collection. Based on the experimentally obtained complex refractive indices of the OPV materials and the thickness-dependence of the internal quantum efficiency of the OPV active layer, we analyze the potential benefits of light trapping strategies for maximizing the overall power conversion efficiency of the cell. This approach provides a general strategy for optimizing the power conversion efficiency of a wide range of OPV structures. In particular, as an experimental trial system, the approach is applied here to a ultra-thin film solar cell with a SubPc/C{sub 60} photovoltaic structure. Using a patterned indium tin oxide (ITO) top contact, the numerically optimized designs achieve short-circuit currents of 0.790 and 0.980?mA/cm{sup 2} for 30?nm and 45?nm SubPc/C{sub 60} heterojunction layer thicknesses, respectively. These values correspond to a power conversion efficiency enhancement of 78% for the 30?nm thick cell, but only of 32% for a 45?nm thick cell, for which the overall photocurrent is actually higher. Applied to other material systems, the general optimization method can elucidate if light trapping strategies can improve a given cell architecture.

  9. Thin-film Sb2Se3 photovoltaics with oriented one-dimensional ribbons and benign

    E-Print Network [OSTI]

    Sargent, Edward H. "Ted"

    to the substrate, and produced Sb2Se3 thin-film solar cells with a certified device efficiency of 5.6%. Our results are one of the major limiting factors for high-efficiency thin-film solar cells. We began with first cells based on inorganic absorbers, such as Si, GaAs, CdTe and Cu(In,Ga)Se2, permit a high device

  10. Growth of nano-and microcrystalline silicon thin films at low temperature by pulsed electron deposition

    E-Print Network [OSTI]

    Zexian, Cao

    in a multi-junction design [4]. The solar cells based on nanocrystalline silicon (nc-Si) films have now in electronic and optoelectronic devices, particularly in the fabrication of solar cells. Noticeably, thin-film silicon solar cells take a larger market share than the single- and polycrystalline silicon solar cells

  11. Enhanced optical absorption in nanopatterned silicon thin films with a nano-cone-hole

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    .6845, 040.5350. The silicon solar cell is presently dominating the solar cell market, owing to its abundant supply, nearly ideal band gap, and mature fabrication process. Most commer- cial silicon solar cells is consumed, leading to a higher cost for the final product [1]. The thin film silicon solar cell

  12. Mechanisms of Zinc Oxide Nanocrystalline Thin Film Formation by Thermal Degradation of Metal-Loaded Hydrogels

    E-Print Network [OSTI]

    electrode in flat- panel displays,1 solar cells, and thin-film transistors.2,3 Other recent reports account as a short-range probe to investigate the first stages of nucleation and the following development of Zn

  13. Intermixing at the absorber-buffer layer interface in thin-film...

    Office of Scientific and Technical Information (OSTI)

    Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S)sub 2 and Cusub 2ZnSn(Se,S)sub 4...

  14. Defect engineering of cuprous oxide thin-films for photovoltaic applications

    E-Print Network [OSTI]

    Lee, Yun Seog

    2013-01-01

    Thin-film solar cells are promising for renewable-energy applications due to their low material usage and inexpensive manufacturing potential, making them compatible with terawatts-level deployment. Cuprous oxide (Cu?O) ...

  15. Introducing Perovskite Solar Cells to Undergraduates In this Viewpoint, we show that it is sufficiently easy and

    E-Print Network [OSTI]

    solar cells based on GaAs (gallium arsenide) single crystals are 29 and over 40% efficient in single 2 decades, solar cells based on thin-film polycrystalline materials, especially CdTe (cadmium. The experiment is suitable for chemistry students to learn about thin-film polycrystalline solar cells, energy

  16. Epitaxial thin films

    DOE Patents [OSTI]

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  17. Final project report - CRADA with United Solar Technologies and Pacific Northwest Laboratory (PNL-021): Thin film materials for low-cost high performance solar concentrators

    SciTech Connect (OSTI)

    Martin, P.M.; Affinito, J.D.; Gross, M.E.; Bennett, W.D.

    1995-03-01

    The objectives of this project were as follows: To develop and evaluate promising low-cost dielectric and polymer-protected thin-film reflective metal coatings to be applied to preformed continuously-curved solar reflector panels to enhance their solar reflectance, and to demonstrate protected solar reflective coatings on preformed solar concentrator panels. The opportunity for this project arose from a search by United Solar Technologies (UST) for organizations and facilities capable of applying reflective coatings to large preformed panels. PNL was identified as being uniquely qualified to participate in this collaborative project.

  18. (Melanin-Sensitized Solar Cell) : 696220016

    E-Print Network [OSTI]

    platinum thin film for counter-electrode, uses solar simulator to measure efficiency at AM 1.5 (100 mW/cm2 (Melanin-Sensitized Solar Cell) : : : 696220016 #12; #12;#12; #12;I PLD the majority dye-sensitized solar cell research all uses the Ruthenium-complex as a light harvester

  19. In-Line Post-Process Scribing for Reducing Cell to Module Efficiency Gap in Monolithic Thin Film Photovoltaics

    E-Print Network [OSTI]

    Dongaonkar, Sourabh

    2013-01-01

    The gap between cell and module efficiency is a major challenge for all photovoltaic (PV) technologies. For monolithic thin film PV modules, a significant fraction of this gap has been attributed to parasitic shunts, and other defects, distributed across the module. In this paper, we show that it is possible to contain or isolate these shunt defects, using the state of the art laser scribing processes, after the fabrication of the series connected module is finished. We discuss three possible alternatives, and quantify the performance gains for each technique. We demonstrate that using these techniques, it is possible to recover up to 50% of the power lost to parasitic shunts, which results in 1-2% (absolute) increase in module efficiencies for typical thin film PV technologies.

  20. Microstructured surface design for omnidirectional antireflection coatings on solar cells

    E-Print Network [OSTI]

    Zhou, Weidong

    Microstructured surface design for omnidirectional antireflection coatings on solar cells Weidong to current crystalline silicon solar cells, as well as future thin film, quantum dot, and organic solar cells for light collection is vital in achieving high performance solar cells.1 An ideal antireflec- tion AR

  1. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    Deposition. Industrial & Engineering Chemistry Research, 50,deposition. Industrial & Engineering Chemistry Research, 48:deposition. Industrial & Engineering Chemistry Research, 50:

  2. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    Bachelor of Science, Chemical Engineering Dalian Universityof Technology Dalian, China 2008–2009 Master of Science,

  3. InGaAsP/InP intrastep quantum wells for enhanced solar energy conversion

    E-Print Network [OSTI]

    Chen, Winnie Victoria

    2012-01-01

    Y. Hioki, “Ceramic Thin Film CdTe Solar Cell,” Jpn. J. Appl.Thin-film CuInSe 2 /CdS heterojunction solar cells,” Appl.the first thin-film amorphous Si solar cells in 1976 [7

  4. Synthesis and Characterization of Functional Nanostructured Zinc Oxide Thin Films

    E-Print Network [OSTI]

    Chow, Lee

    .1149/1.2357098, copyright The Electrochemical Society 65 #12;66 reduced environmental impact and a minimum undesirable inter-temperature thin film growth technique has been developed to fabricate a new generation of smart and functional and structural requirements of their applications in gas sensors and solar cells. The rapid photothermal

  5. FLEXIBLE CdTe SOLAR CELLS BY A LOW TEMPERATURE PROCESS ON ITO/ZnO COATED A. Salavei, I. Rimmaudo, F. Piccinelli1

    E-Print Network [OSTI]

    Romeo, Alessandro

    FLEXIBLE CdTe SOLAR CELLS BY A LOW TEMPERATURE PROCESS ON ITO/ZnO COATED POLYMERS A. Salavei, I will be discussed. Keywords: Flexible Substrate, CdTe, ITO, Laser Processing, Thin Film Solar Cell 1 INTRODUCTION Thin film solar cells deposited on a flexible substrate are easier to integrate in buildings; they also

  6. Microscale solar cells for high concentration on polycrystalline Cu(In,Ga)Se2 Myriam Paire,1,2,3,4,a)

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    thin film solar cell material,7 and efficiencies over 20% were achieved recently. We study CIGS to decrease with illumination. The device described in this letter is a glass/Mo/CIGS/ CdS/ZnO solar cellMicroscale solar cells for high concentration on polycrystalline Cu(In,Ga)Se2 thin films Myriam

  7. Solar Energy Materials & Solar Cells 75 (2003) 307312 Extreme radiation hardness and light-weighted

    E-Print Network [OSTI]

    Woodall, Jerry M.

    2003-01-01

    Solar Energy Materials & Solar Cells 75 (2003) 307­312 Extreme radiation hardness and light-weighted thin-film indium phosphide solar cell and its computer simulation Guohua Lia, *, Qingfen Yanga+ -i-p+ InP solar cell is developed. The total thickness of its epitaxial layer is only 0.22 mm

  8. Control of morphology for enhanced electronic transport in PECVD-grown a-Si : H Thin Films

    E-Print Network [OSTI]

    Castro Galnares, Sebastián

    2010-01-01

    Solar cells have become an increasingly viable alternative to traditional, pollution causing power generation methods. Although crystalline silicon (c-Si) modules make up most of the market, thin films such as hydrogenated ...

  9. Semitransparent ultrathin CdTe solar cells Semitransparent ultrathin CdTe solar cells and durabilityand durability

    E-Print Network [OSTI]

    Rollins, Andrew M.

    Semitransparent ultrathin CdTe solar cells Semitransparent ultrathin CdTe solar cells lines · Thinfilm CIGS--not available in transparent form · Dye sensitized solar thin films· Dye.E. McCandless, W.A. Buchanan. "High throughput processing of CdTe/CdS solar cells with thin absorber

  10. Fabrication of polycrystalline thin films by pulsed laser processing

    DOE Patents [OSTI]

    Mitlitsky, Fred (Livermore, CA); Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Colella, Nicholas J. (Livermore, CA)

    1998-02-03

    A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

  11. Fabrication of polycrystalline thin films by pulsed laser processing

    DOE Patents [OSTI]

    Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

    1998-02-03

    A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

  12. Plasmonic solar cells K.R. Catchpole,1,2*

    E-Print Network [OSTI]

    Polman, Albert

    Plasmonic solar cells K.R. Catchpole,1,2* and A. Polman,1 1 FOM Institute for Atomic and Molecular of increasing the light absorption in thin-film solar cells. Enhancements in photocurrent have been observed for a wide range of semiconductors and solar cell configurations. We review experimental and theoretical

  13. Solar cell efficiency enhancement via light trapping in printable resonant

    E-Print Network [OSTI]

    Grandidier, Jonathan

    Solar cell efficiency enhancement via light trapping in printable resonant dielectric nanosphere, photovoltaics, resonant dielectric structures, solar cells * Corresponding author: e-mail jgrandid for addressing the key challenge of light trapping in thin-film solar cells. We experimentally and theoretically

  14. Investigation of Solar Energy Transfer through Plasmonic Au Nanoparticle-doped Sol-derived TiO? Thin Films in Photocatalysis and Photovoltaics /

    E-Print Network [OSTI]

    Zelinski, Andrew

    2013-01-01

    TiO 2 Thin Films in Photocatalysis and Photovoltaics ATiO 2 Thin Films in Photocatalysis and Photovoltaics by

  15. IEEE Spectrum: Thin-Film Trick Makes Gallium Arsenide Devices Cheap http://spectrum.ieee.org/semiconductors/materials/thinfilm-trick-makes-gallium-arsenide-devices-cheap[5/22/2010 1:39:13 PM

    E-Print Network [OSTI]

    Rogers, John A.

    to man," says Rogers, a materials engineer. Some GaAs solar cells can convert about 40 percent of the sun // MATERIALS NEWS Thin-Film Trick Makes Gallium Arsenide Devices Cheap Rubber-stamping makes creating solarIEEE Spectrum: Thin-Film Trick Makes Gallium Arsenide Devices Cheap http://spectrum.ieee.org

  16. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    a renewable, sustainable, and clean energy future whilerenewable energy sources capable of powering a sustainable future.

  17. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    B. To, R. Noufi, Progress in Photovoltaics: Research andGokmen, D. B. Mitzi, Progress in Photovoltaics: Research andR. Noufi, Progress in Photovoltaics: Research and

  18. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    D. B. Mitzi, Energy & Environmental Science 2012, 5, 7060. [D. B. Mitzi, Energy & Environmental Science 2012, 5, 7060. [precursor inks,” Energy & Environmental Science, vol. 5, no.

  19. Low resistance thin film organic solar cell electrodes

    DOE Patents [OSTI]

    Forrest, Stephen (Princeton, NJ); Xue, Jiangeng (Piscataway, NJ)

    2008-01-01

    A method which lower the series resistance of photosensitive devices includes providing a transparent film of a first electrically conductive material arranged on a transparent substrate; depositing and patterning a mask over the first electrically conductive material, such that openings in the mask have sloping sides which narrow approaching the substrate; depositing a second electrically conductive material directly onto the first electrically conductive material exposed in the openings of the mask, at least partially filling the openings; stripping the mask, leaving behind reentrant structures of the second electrically conductive material which were formed by the deposits in the openings of the mask; after stripping the mask, depositing a first organic material onto the first electrically conductive material in between the reentrant structures; and directionally depositing a third electrically conductive material over the first organic material deposited in between the reentrant structures, edges of the reentrant structures aligning deposition so that the third electrically conductive material does not directly contact the first electrically conductive material, and does not directly contact the second electrically conductive material.

  20. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  1. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  2. Optimization of chemical bath deposited CdS thin films using nitrilotriacetic acid as a complexing agent

    E-Print Network [OSTI]

    Chow, Lee

    thin film solar cells based on CdTe or CIGS [1,2]. CdS has also been used in other applications. The highest efficiencies reported for both CdTe and CIGS solar cells were obtained when chemical bath is known to greatly enhance the performance of CdS windows used in the above mentioned solar cells

  3. Progress in High-Performance PV: Polycrystalline Thin-Film Tandem Cells

    SciTech Connect (OSTI)

    Symko-Davies, M.

    2004-08-01

    The High-Performance Photovoltaic (HiPerf PV) Project was initiated by the U.S. Department of Energy to substantially increase the viability of PV for cost-competitive applications. The goal is that PV will contribute significantly to the U.S. and world energy supply and environmental enhancement in the 21st century. The HiPerf PV Project aims at exploring the ultimate performance limits of existing PV technologies, approximately doubling their sunlight-to-electricity conversion efficiencies during its course, to accelerate and enhance their impact in the marketplace. To accomplish this, the National Center for Photovoltaics (NCPV) directs in-house and subcontracted research in high-performance polycrystalline thin-film and multijunction concentrator devices. This paper will describe progress of the subcontractor and in-house R&D on critical pathways for a PV technology having a high potential to reach cost-competitiveness goals: 25%-efficient, low-cost polycrystalline thin-film tandems for large-area, flat-plate modules.

  4. Low-cost solar collectors using thin-film plastics absorbers and glazings

    SciTech Connect (OSTI)

    Wilhelm, W.G.

    1980-01-01

    The design, fabrication, performance, cost, and marketing of flat plate solar collectors using plastic absorbers and glazings are described. Manufacturing cost breakdowns are given for single-glazed and double-glazed collectors. (WHK)

  5. Light Trapping, Absorption and Solar Energy Harvesting by Artificial...

    Office of Scientific and Technical Information (OSTI)

    Org: USDOE Country of Publication: United States Language: English Subject: 14 SOLAR ENERGY light-trapping, photonic crystals, high-efficiency thin-film solar cells Word Cloud...

  6. Organic solar cells: An overview focusing on active layer morphology Travis L. Benanti & D. Venkataraman*

    E-Print Network [OSTI]

    Venkataraman, Dhandapani "DV"

    Review Organic solar cells: An overview focusing on active layer morphology Travis L. Benanti & D/acceptor blend, morphology, photovoltaic devices, plastic solar cells, thin films Abstract Solar cells heterojunction concept. This review provides an overview of organic solar cells. Topics covered include: a brief

  7. innovati nNREL Designs Promising New Oxides for Solar Cells

    E-Print Network [OSTI]

    innovati nNREL Designs Promising New Oxides for Solar Cells High-efficiency, thin-film solar cells material. The upper TCO contact in a solar cell allows light to reach the absorber material below, which by the TCO to an external circuit, forming the negative terminal of the solar cell. TCOs used in this fashion

  8. Thin film photovoltaic cells having increased durability and operating life and method for making same

    DOE Patents [OSTI]

    Barnett, Allen M. (Newark, DE); Masi, James V. (Wilmington, DE); Hall, Robert B. (Newark, DE)

    1980-12-16

    A solar cell having a copper-bearing absorber is provided with a composite transparent encapsulating layer specifically designed to prevent oxidation of the copper sulfide. In a preferred embodiment, the absorber is a layer of copper sulfide and the composite layer comprises a thin layer of copper oxide formed on the copper sulfide and a layer of encapsulating glass formed on the oxide. It is anticipated that such devices, when exposed to normal operating conditions of various terrestrial applications, can be maintained at energy conversion efficiencies greater than one-half the original conversion efficiency for periods as long as thirty years.

  9. Emerging High-Efficiency Low-Cost Solar Cell Technologies

    E-Print Network [OSTI]

    McGehee, Michael

    J. of Photovoltaics, 2 (2012) p. 303. Si GaAs #12;Why thin film GaAs;Gallium Arsenide · The 1.4 eV band gap is ideal for solar cells. · High quality films are grownEmerging High-Efficiency Low-Cost Solar Cell Technologies Mike McGehee Materials Science

  10. Intermixing at the absorber-buffer layer interface in thin-film solar

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfate Reducing(Journalspectroscopy of aerosols in high-temperature applications.cells: The electronic

  11. Nanostructured columnar heterostructures of TiO2 and Cu2O enabled by a thin-film self-assembly approach: Potential for photovoltaics

    E-Print Network [OSTI]

    Pennycook, Steve

    difficulties and potentially realize higher efficiencies, new approaches such as multi-junction solar cells of planar geometry, single junction thin film solar cells, in particular cadmium telluride (CdTe) and copper (with efficiencies of over 40%) [5], dye sensitized solar cells, bulk heterojunctions and organic cells

  12. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  13. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Cheng, Yang-Tse (Rochester Hills, MI); Poli, Andrea A. (Livonia, MI); Meltser, Mark Alexander (Pittsford, NY)

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  14. Influence of sputtering power on the optical properties of ITO thin films

    SciTech Connect (OSTI)

    K, Aijo John; M, Deepak, E-mail: manju.thankamoni@gmail.com; T, Manju, E-mail: manju.thankamoni@gmail.com [Department of Physics, Sree Sankara College, Kalady P. O., Ernakulam Dist., Kerala (India); Kumar, Vineetha V. [Dept. of Physics, K. E. College, Mannanam, Kottayam Dist., Kerala (India)

    2014-10-15

    Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

  15. Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO), Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

    1998-08-08

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  16. Nanocrystal Solar Cells

    SciTech Connect (OSTI)

    Gur, Ilan

    2006-12-15

    This dissertation presents the results of a research agenda aimed at improving integration and stability in nanocrystal-based solar cells through advances in active materials and device architectures. The introduction of 3-dimensional nanocrystals illustrates the potential for improving transport and percolation in hybrid solar cells and enables novel fabrication methods for optimizing integration in these systems. Fabricating cells by sequential deposition allows for solution-based assembly of hybrid composites with controlled and well-characterized dispersion and electrode contact. Hyperbranched nanocrystals emerge as a nearly ideal building block for hybrid cells, allowing the controlled morphologies targeted by templated approaches to be achieved in an easily fabricated solution-cast device. In addition to offering practical benefits to device processing, these approaches offer fundamental insight into the operation of hybrid solar cells, shedding light on key phenomena such as the roles of electrode-contact and percolation behavior in these cells. Finally, all-inorganic nanocrystal solar cells are presented as a wholly new cell concept, illustrating that donor-acceptor charge transfer and directed carrier diffusion can be utilized in a system with no organic components, and that nanocrystals may act as building blocks for efficient, stable, and low-cost thin-film solar cells.

  17. Multifunctional thin film surface

    DOE Patents [OSTI]

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  18. Rechargeable thin film battery and method for making the same

    DOE Patents [OSTI]

    Goldner, Ronald B.; Liu, Te-Yang; Goldner, Mark A.; Gerouki, Alexandra; Haas, Terry E.

    2006-01-03

    A rechargeable, stackable, thin film, solid-state lithium electrochemical cell, thin film lithium battery and method for making the same is disclosed. The cell and battery provide for a variety configurations, voltage and current capacities. An innovative low temperature ion beam assisted deposition method for fabricating thin film, solid-state anodes, cathodes and electrolytes is disclosed wherein a source of energetic ions and evaporants combine to form thin film cell components having preferred crystallinity, structure and orientation. The disclosed batteries are particularly useful as power sources for portable electronic devices and electric vehicle applications where high energy density, high reversible charge capacity, high discharge current and long battery lifetimes are required.

  19. Mixed ternary heterojunction solar cell

    DOE Patents [OSTI]

    Chen, Wen S. (Seattle, WA); Stewart, John M. (Seattle, WA)

    1992-08-25

    A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI.sub.2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe.sub.2 or CuIn(SSe).sub.2.

  20. Process Development for High Voc CdTe Solar Cells

    SciTech Connect (OSTI)

    Ferekides, C. S.; Morel, D. L.

    2011-05-01

    This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

  1. Fabrication of Yttria stabilized zirconia thin films on porous substrates for fuel cell applications

    E-Print Network [OSTI]

    Leming, Andres

    2003-01-01

    Substrates for Fuel Cell Applications by Andrés Leming B.Substrates for Fuel Cell Applications by Andrés Lemingparticularly useful for fuel cell applications and were not

  2. Effects of Series Resistance and Inductance on Solar Cell Admittance Measurements(a)

    E-Print Network [OSTI]

    Scofield, John H.

    on a variety of 0.43 cm2 area, copper indium gallium diselenide (CIGS) polycrystalline thin film solar cellsEffects of Series Resistance and Inductance on Solar Cell Admittance Measurements(a) John H Energy Materials and Solar Cells on April 17, 1994) Admittance measurements have been performed

  3. NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE

    E-Print Network [OSTI]

    Sites, James R.

    NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE M. Gloeckler, A important complications that are often found in experimental CIGS and CdTe solar cells. 1. INTRODUCTION Numerical modeling of polycrystalline thin-film solar cells is an important strategy to test the viability

  4. Solar Cells from Earth-Abundant Semiconductors with Plasmon-Enhanced Light Absorption

    SciTech Connect (OSTI)

    Atwater, Harry

    2012-04-30

    Progress is reported in these areas: Plasmonic Light Trapping in Thin Film a-Si Solar Cells; Plasmonic Light Trapping in Thin InGaN Quantum Well Solar Cells; and Earth Abundant Cu{sub 2}O and Zn{sub 3}P{sub 2} Solar Cells.

  5. STUDY OF THE EFFECT OF ABSORBER ETCHING ON THE BACK CONTACT PERFORMANCE OF CDTE SOLAR CELLS

    E-Print Network [OSTI]

    Romeo, Alessandro

    STUDY OF THE EFFECT OF ABSORBER ETCHING ON THE BACK CONTACT PERFORMANCE OF CDTE SOLAR CELLS Ivan that has shown a remarkable market success in thin film solar cells. It is well known that deposition and defects are addressed. 2 EXPERIMENTAL CdTe solar cells, in our laboratory, are usually prepared as follows

  6. DISSERTATION Role of the Cu-O Defect in CdTe Solar Cells

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION Role of the Cu-O Defect in CdTe Solar Cells Submitted by Caroline R. Corwine OF THE CU-O DEFECT COMPLEX IN CDTE SOLAR CELLS Thin-film CdTe is one of the leading materials used in photovoltaic (PV) solar cells. One way to improve device performance and stability is through understanding how

  7. Towards an understanding of light activation processes in titanium oxide based inverted organic solar cells

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    solar cells S. Chambon, E. Destouesse, B. Pavageau, L. Hirsch, and G. Wantz Citation: J. Appl. Phys. 112. Related Articles Power losses in bilayer inverted small molecule organic solar cells Appl. Phys. Lett. 101, 233903 (2012) Thin-film encapsulation of inverted indium-tin-oxide-free polymer solar cells by atomic

  8. Angular dependence of light trapping in In0.3Ga0.7As/GaAs quantum-well solar cells

    E-Print Network [OSTI]

    Yu, Edward T.

    Angular dependence of light trapping in In0.3Ga0.7As/GaAs quantum-well solar cells X. H. Li,1 P. C trapping in thin-film solar cells via engineered surface morphology or device geometry, scattering,10 In this paper, we describe and demonstrate thin-film quantum-well solar cells that are grown by molecular beam

  9. Tuning the transport properties of layer-by-layer thin films for fuel cell applications

    E-Print Network [OSTI]

    Ashcraft, James Nathan

    2009-01-01

    The increasing global focus on alternative energy sources has led to a renewed interest in fuel cells. For low power, portable applications, direct methanol fuel cells (DMFCs) are the most promising type of fuel cell. DMFCs ...

  10. Thin films of mixed metal compounds

    DOE Patents [OSTI]

    Mickelsen, R.A.; Chen, W.S.

    1985-06-11

    Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

  11. Development of Thin Film Membrane Assemblies with Novel Nanostructured Electrocatalyst for Next Generation Fuel Cells

    E-Print Network [OSTI]

    Popov, Branko N.

    of the efficiency loss (80%) in a fuel cell arises due to the cathode. Oxygen reduction at the cathode requires Generation Fuel Cells Abstract: While problems related to CO poisoning still exist for the anode, most the largest amount of the catalyst in PEM fuel cells due to its lower activity. This problem needs

  12. Full Spectrum Boost in Nanoparticle Solar Cells UC Davis/Theory: F.Gygi, M.Voros, GTZ

    E-Print Network [OSTI]

    designs are needed GaAs 29% Alta Devices HIT c-Si cell 26% Panasonic, SunPower Thin film CdTe 20Full Spectrum Boost in Nanoparticle Solar Cells UC Davis/Theory: F.Gygi, M.Voros, GTZ UC Davis% First Solar Organic solar cells 12% Sumitomo #12;Solar Energy Conversion: Basics 5 1. No absorption

  13. Dye-sensitized solar cells

    DOE Patents [OSTI]

    Skotheim, T.A.

    1980-03-04

    A low-cost dye-sensitized Schottky barrier solar cell is comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent. 3 figs.

  14. Dye-sensitized solar cells

    DOE Patents [OSTI]

    Skotheim, Terje A. [Berkeley, CA

    1980-03-04

    A low-cost dye-sensitized Schottky barrier solar cell comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent.

  15. The dynamic behavior of thin-film ionic transition metal complex-based light-emitting electrochemical cells

    SciTech Connect (OSTI)

    Meier, Sebastian B., E-mail: sebastian.meier@belectric.com, E-mail: wiebke.sarfert@siemens.com [Department of Materials Science VI: Materials for Electronics and Energy Technology, Friedrich-Alexander-University of Erlangen-Nuremberg, 91058 Erlangen (Germany); Siemens AG, Corporate Technology, CT RTC MAT IEC-DE, 91058 Erlangen (Germany); Hartmann, David; Sarfert, Wiebke, E-mail: sebastian.meier@belectric.com, E-mail: wiebke.sarfert@siemens.com [Siemens AG, Corporate Technology, CT RTC MAT IEC-DE, 91058 Erlangen (Germany); Winnacker, Albrecht [Department of Materials Science VI: Materials for Electronics and Energy Technology, Friedrich-Alexander-University of Erlangen-Nuremberg, 91058 Erlangen (Germany)

    2014-09-14

    Light-emitting electrochemical cells (LECs) have received increasing attention during recent years due to their simple architecture, based on solely air-stabile materials, and ease of manufacture in ambient atmosphere, using solution-based technologies. The LEC's active layer offers semiconducting, luminescent as well as ionic functionality resulting in device physical processes fundamentally different as compared with organic light-emitting diodes. During operation, electrical double layers (EDLs) form at the electrode interfaces as a consequence of ion accumulation and electrochemical doping sets in leading to the in situ development of a light-emitting p-i-n junction. In this paper, we comment on the use of impedance spectroscopy in combination with complex nonlinear squares fitting to derive key information about the latter events in thin-film ionic transition metal complex-based light-emitting electrochemical cells based on the model compound bis-2-phenylpyridine 6-phenyl-2,2´-bipyridine iridium(III) hexafluoridophosphate ([Ir(ppy)?(pbpy)][PF?]). At operating voltages below the bandgap potential of the ionic complex used, we obtain the dielectric constant of the active layer, the conductivity of mobile ions, the transference numbers of electrons and ions, and the thickness of the EDLs, whereas the transient thickness of the p-i-n junction is determined at voltages above the bandgap potential. Most importantly, we find that charge transport is dominated by the ions when carrier injection from the electrodes is prohibited, that ion movement is limited by the presence of transverse internal interfaces and that the width of the intrinsic region constitutes almost 60% of the total active layer thickness in steady state at a low operating voltage.

  16. PROPERTIES OF Cd and Zn PARTIAL ELECTROLYTE TREATED CIGS SOLAR CELLS K. Ramanathan, F.S. Hasoon, S. Smith, A. Mascarenhas, H. Al-Thani, J. Alleman, H.S. Ullal and J. Keane

    E-Print Network [OSTI]

    Sites, James R.

    on the photovoltaic properties of CuInGaSe2 (CIGS) and CuIn- GaSSe2 (CIGSS) thin film absorbers. We find be used to produce efficient photovoltaic cells in CuInSe2 thin films [5]. In this report, we extend provided by Shell Solar Industries (SSI). EXPERIMENTAL CIGS thin films were grown by the three-stage proc

  17. NMR characterization of thin films

    DOE Patents [OSTI]

    Gerald, II, Rex E. (Brookfield, IL); Klingler, Robert J. (Glenview, IL); Rathke, Jerome W. (Homer Glen, IL); Diaz, Rocio (Chicago, IL); Vukovic, Lela (Westchester, IL)

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  18. NMR characterization of thin films

    DOE Patents [OSTI]

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  19. Silicon epitaxy below 200C: Towards thin crystalline solar cells R. Carioua,b

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    . However material still represent more than 40% of the cost of c-Si PV Thin Film Solar Technology IV-Si) technology. Indeed, the learning curve of c-Si solar cells has reached a plateau since 1999 with the 25Silicon epitaxy below 200°C: Towards thin crystalline solar cells R. Carioua,b , R. Ruggeria,c , P

  20. Swiss Federal Laboratories for Materials Science and Technology Advances in Thin Film PV: CIGS & CdTe

    E-Print Network [OSTI]

    Canet, Léonie

    and Photovoltaics Thin film solar cells based on compound semiconductor absorbers: CIGS and CdTe High efficiency: http://www.nrel.gov/ncpv/images/efficiency_chart.jpg 20.4% flexible CIGS solar cell record by Empa #12 solar cells 1µm Substrate Mo CIGS Buffer ZnO/ZnO:Al 15 20 25 30 100 300 500 700 900 Cu [at%] t

  1. Fabrication of Yttria stabilized zirconia thin films on poroussubstrates for fuel cell applications

    SciTech Connect (OSTI)

    Leming, Andres

    2003-06-16

    A process for the deposition of yttria stabilized zirconia (YSZ) films, on porous substrates, has been developed. These films have possible applications as electrolyte membranes in fuel cells. The films were deposited from colloidal suspensions through the vacuum infiltration technique. Films were deposited on both fully sintered and partially sintered substrates. A critical cracking thickness for the films was identified and strategies are presented to overcome this barrier. Green film density was also examined, and a method for improving green density by changing suspension pH and surfactant was developed. A dependence of film density on film thickness was observed, and materials interactions are suggested as a possible cause. Non-shorted YSZ films were obtained on co-fired substrates, and a cathode supported solid oxide fuel cell was constructed and characterized.

  2. Thin film superconductor magnetic bearings

    DOE Patents [OSTI]

    Weinberger, Bernard R. (Avon, CT)

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  3. Photovoltaic Single-Crystalline, Thin-Film Cell Basics | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergy Bills andOrder 422.1, CONDUCTCriticalEnergySilicon Cell BasicsEnergy

  4. Solar photovoltaics is considered as one of the most promising techniques for supplying clean, sustainable and renewable energy. II-VI and III-V semiconductor materials have attracted

    E-Print Network [OSTI]

    for developing economically viable photovoltaic (PV) thin-film solar cells. Using the approach of multilayer semiconductor quantum dots (QDs) and dilute-nitride GaAsN thin films grown by molecular beam epitaxy (MBE spacer layers grown on GaAs substrates, and dilute-nitride GaAsN thin films grown on GaAs substrates

  5. Edge sharpness Dependence of MNP in plasmonic solar cell In this article we show that in a a-Si ultra thin plsmonic solar cell with silver nano-particle, the

    E-Print Network [OSTI]

    Park, Namkyoo

    , and M. L. Brongersma, Design of Plasmonic Thin-Film Solar Cells with Broadband Absorption Enhancements that in a a-Si ultra thin plsmonic solar cell with silver nano-particle, the absorption of the light can Edge sharpness Dependence of MNP in plasmonic solar cell *, , In this article we show

  6. This interactive exhibit is a bean bag tossing game that teaches about the energy of different colors of light and how a solar cell works. Kids

    E-Print Network [OSTI]

    Hochberg, Michael

    is a generalized schematic that could apply to organic or inorganic thin film solar cells. · Directions / Socratic of different colors of light and how a solar cell works. Kids toss colored bean bags at a model solar cell Sequence Hand the child the bean bags. Tell them "The poster shows the layers of a solar cell seen from

  7. Laser Induced Breakdown Spectroscopy and Applications Toward Thin Film Analysis

    E-Print Network [OSTI]

    Owens, Travis Nathan

    2011-01-01

    Organic Thin Films 4.1 Introduction . . . . . . . . . . . .T iO 2 thin films. . . . . . . . . . . . . . . . . . . . .properties of the organic thin films. . . . . . . . .

  8. Direct measurements of band gap grading in polycrystalline CIGS solar cells

    E-Print Network [OSTI]

    Heinrich, M P; Zhang, Y; Kiowski, O; Powalla, M; Lemmer, U; Slobodskyy, A

    2010-01-01

    We present direct measurements of depth-resolved band gap variations of CuIn(1-x)Ga(x)Se2 thin-film solar cell absorbers. A new measurement technique combining parallel measurements of local thin-film interference and spectral photoluminescence was developed for this purpose. We find sample-dependent correlation parameters between measured band gap depth and composition profiles, and emphasize the importance of direct measurements. These results bring a quantitative insight into the electronic properties of the solar cells and open a new way to analyze parameters that determine the efficiency of solar cells.

  9. Direct measurements of band gap grading in polycrystalline CIGS solar cells

    E-Print Network [OSTI]

    M. P. Heinrich; Z-H. Zhang; Y. Zhang; O. Kiowski; M. Powalla; U. Lemmer; A. Slobodskyy

    2010-09-20

    We present direct measurements of depth-resolved band gap variations of CuIn(1-x)Ga(x)Se2 thin-film solar cell absorbers. A new measurement technique combining parallel measurements of local thin-film interference and spectral photoluminescence was developed for this purpose. We find sample-dependent correlation parameters between measured band gap depth and composition profiles, and emphasize the importance of direct measurements. These results bring a quantitative insight into the electronic properties of the solar cells and open a new way to analyze parameters that determine the efficiency of solar cells.

  10. FILM ADHESION IN TRIPLE JUNCTION a-Si SOLAR CELLS ON POLYIMIDE and X. Deng1,2

    E-Print Network [OSTI]

    Deng, Xunming

    FILM ADHESION IN TRIPLE JUNCTION a-Si SOLAR CELLS ON POLYIMIDE SUBSTRATES A. Vijh1,2 , X. Yang1 , W of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous), and the effect of tie coats on film adhesion. INTRODUCTION Amorphous silicon (a-Si) based solar cells

  11. Thin film composite electrolyte

    DOE Patents [OSTI]

    Schucker, Robert C. (The Woodlands, TX)

    2007-08-14

    The invention is a thin film composite solid (and a means for making such) suitable for use as an electrolyte, having a first layer of a dense, non-porous conductive material; a second layer of a porous ionic conductive material; and a third layer of a dense non-porous conductive material, wherein the second layer has a Coefficient of thermal expansion within 5% of the coefficient of thermal expansion of the first and third layers.

  12. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Lauf, Robert J. (Oak Ridge, TN); Hoffheins, Barbara S. (Knoxville, TN); Fleming, Pamela H. (Oak Ridge, TN)

    1994-01-01

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

  13. Thin film ion conducting coating

    DOE Patents [OSTI]

    Goldner, Ronald B. (Lexington, MA); Haas, Terry (Sudbury, MA); Wong, Kwok-Keung (Watertown, MA); Seward, George (Arlington, MA)

    1989-01-01

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  14. Thin film photovoltaic panel and method

    DOE Patents [OSTI]

    Ackerman, Bruce (El Paso, TX); Albright, Scot P. (El Paso, TX); Jordan, John F. (El Paso, TX)

    1991-06-11

    A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

  15. Fundamentals of polycrystalline thin film materials and devices

    SciTech Connect (OSTI)

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. (Delaware Univ., Newark, DE (USA). Inst. of Energy Conversion)

    1991-01-01

    This report presents the results of a one-year research program on polycrystalline thin-film solar cells. The research was conducted to better understand the limitations and potential of solar cells using CuInSe{sub 2} and CdTe by systematically investigating the fundamental relationships linking material processing, material properties, and device behavior. By selenizing Cu and In layers, we fabricated device-quality CuInSe{sub 2} thin films and demonstrated a CuInSe{sub 2} solar cell with 7% efficiency. We added Ga, to increase the band gap of CuInSe{sub 2} devices to increase the open-circuit voltage to 0.55 V. We fabricated and analyzed Cu(InGa)Se{sub 2}/CuInSe{sub 2} devices to demonstrate the potential for combining the benefits of higher V{sub oc} while retaining the current-generating capacity of CuInSe{sub 2}. We fabricated an innovative superstrate device design with more than 5% efficiency, as well as a bifacial spectral-response technique for determining the electron diffusion length and optical absorption coefficient of CuInSe{sub 2} in an operational cell. The diffusion length was found to be greater than 1 {mu}m. We qualitatively modeled the effect of reducing heat treatments in hydrogen and oxidizing treatments in air on the I-V behavior of CuInSe{sub 2} devices. We also investigated post-deposition heat treatments and chemical processing and used them to fabricate a 9.6%-efficient CdTe/CdS solar cell using physical vapor deposition.

  16. GaAs Nanowire Array Solar Cells with Axial p-i-n Junctions Maoqing Yao, Ningfeng Huang, Sen Cong, Chun-Yung Chi, M. Ashkan Seyedi, Yen-Ting Lin, Yu Cao,

    E-Print Network [OSTI]

    Zhou, Chongwu

    into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7-Queisser efficiency limit is to use multijunction solar cells containing several p-n junctions in series.22-26 Each multijunction solar cells consist of sequentially stacked thin films. The lattice constants of the materials

  17. Layer-By-Layer Self-Assembly of CIGS Nanoparticles and Polymers for All-Solution Processable Low-Cost, High-Efficiency Solar Cells

    E-Print Network [OSTI]

    Zhou, Yaoqi

    -Cost, High-Efficiency Solar Cells Tung Ho1 , Robert Vittoe3 , Namratha Kakumanu2 , Sudhir Shrestha2-Purdue University Indianapolis (IUPUI), Indianapolis, IN 46202 Thin film solar cells made from copper indium gallium thereby affecting solar cell efficiency. This research aims to study various polymer materials to replace

  18. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

    1994-11-22

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

  19. Investigation of variation of energy of laser beam on structural, electrical and optical properties of pulsed laser deposited CuO thin films

    SciTech Connect (OSTI)

    Dahiya, V., E-mail: vinitadce@gmail.com; Kumar, A. [Department of Applied Physics, Delhi Technological University, Delhi (India); Kaur, G.; Mitra, A. [Department of Physics, Indian Institute of Technology Roorkee, Roorkee (India)

    2014-04-24

    In this paper, copper oxide (CuO) thin films have been deposited successfully by pulsed laser deposition technique using copper metal as target material. Thin films have been prepared under different energy of laser pulses ranging from 100mJ/pulse to 250 mJ/pulse. These films have been characterized for their structural, electrical and optical properties by using X-Ray Diffractometer (XRD), Four probe method and UV spectroscopy. Morphological and structural studies show that there is increase in crystallite size with the increase in energy of laser beam. Thus resulting in improved crystallinity and degree of orientation of the CuO thin films. Optoelectrical properties show direct relation between conductivity and energy of laser beam. Optical analysis of CuO thin films prepared under different energy of laser beam shows good agreement with structural analysis. The prepared CuO thin films show high absorbance in the UV and visible range and thus are suitable candidate for thin films solar cell application.

  20. Approaches To Integrating A HIgh Penertration Of Solar PV and CPV Onto The Electrical Grid

    E-Print Network [OSTI]

    Hill, Steven Craig

    2013-01-01

    focused systems, multi-junction solar cells are needed whichSolar cells to be used in the CPV system can be single junction silicon cells, thin films or multi-

  1. Influence of Gas Flow Rate for Formation of Aligned Nanorods in ZnO Thin Films for Solar-Driven Hydrogen Production

    SciTech Connect (OSTI)

    Shet, S.; Chen, L.; Tang, H.; Nuggehalli, R.; Wang, H.; Yan, Y.; Turner, J.; Al-Jassim, M.

    2012-04-01

    ZnO thin films have been deposited in mixed Ar/N{sub 2} gas ambient at substrate temperature of 500 C by radiofrequency sputtering of ZnO targets. We find that an optimum N{sub 2}-to-Ar ratio in the deposition ambient promotes the formation of well-aligned nanorods. ZnO thin films grown in ambient with 25% N{sub 2} gas flow rate promoted nanorods aligned along c-axis and exhibit significantly enhanced photoelectrochemical (PEC) response, compared with ZnO thin films grown in an ambient with different N{sub 2}-to-Ar gas flow ratios. Our results suggest that chamber ambient is critical for the formation of aligned nanostructures, which offer potential advantages for improving the efficiency of PEC water splitting for H{sub 2} production.

  2. Atmospheric Pressure Chemical Vapor Deposition of High Silica SiO2-TiO2 Antireflective Thin Films for Glass Based Solar Panels

    SciTech Connect (OSTI)

    Klobukowski, Erik R; Tenhaeff, Wyatt E; McCamy, James; Harris, Caroline; Narula, Chaitanya Kumar

    2013-01-01

    The atmospheric pressure chemical vapor deposition (APCVD) of SiO2-TiO2 thin films employing [[(tBuO)3Si]2O-Ti(OiPr)2], which can be prepared from commercially available materials, results in antireflective thin films on float glass under industrially relevant manufacturing conditions. It was found that while the deposition temperature had an effect on the SiO2:TiO2 ratio, the thickness was dependent on the time of deposition. This study shows that it is possible to use APCVD employing a single source precursor containing titanium and silicon to produce thin films on float glass with high SiO2:TiO2 ratios.

  3. Transparent conducting thin films for spacecraft applications

    SciTech Connect (OSTI)

    Perez-Davis, M.E.; Malave-Sanabria, T.; Hambourger, P.; Rutledge, S.K.; Roig, D.; Degroh, K.K.; Hung, C.

    1994-01-01

    Transparent conductive thin films are required for a variety of optoelectronic applications: automotive and aircraft windows, and solar cells for space applications. Transparent conductive coatings of indium-tin-oxide (ITO)-magnesium fluoride (MgF2) and aluminum doped zinc oxide (AZO) at several dopant levels are investigated for electrical resistivity (sheet resistance), carrier concentration, optical properties, and atomic oxygen durability. The sheet resistance values of ITO-MgF2 range from 10[sup 2] to 10[sup 11] ohms/square, with transmittance of 75 to 86 percent. The AZO films sheet resistances range from 10[sup 7] to 10[sup 11] ohms/square with transmittances from 84 to 91 percent. It was found that in general, with respect to the optical properties, the zinc oxide (ZnO), AZO, and the high MgF2 content ITO-MgF2 samples, were all durable to atomic oxygen plasma, while the low MgF2 content of ITO-MgF2 samples were not durable to atomic oxygen plasma exposure.

  4. ULTRA-LIGHTWEIGHT AMORPHOUS SILICON SOLAR CELLS DEPOSITED OIN 7.5pn-1 THICK STAINLESS STEEL SUBSTRATES

    E-Print Network [OSTI]

    Deng, Xunming

    ULTRA-LIGHTWEIGHT AMORPHOUS SILICON SOLAR CELLS DEPOSITED OIN 7.5pn-1 THICK STAINLESS STEEL specific power for space application, we deposited a-Si thin film solar cells on ultra-thin stainless steel-thin stainless steel (SS) substrates (down to 7.5 pm) for space power applications. In this paper, we report our

  5. Simple flash evaporator for making thin films of compounds

    SciTech Connect (OSTI)

    Hemanadhan, M.; Bapanayya, Ch.; Agarwal, S. C. [Department of Physics, Indian Institute of Technology, Kanpur 208016 (India)

    2010-07-15

    A simple and compact arrangement for flash evaporation is described. It uses a cell phone vibrator for powder dispensing that can be incorporated into a vacuum deposition chamber without any major alterations. The performance of the flash evaporation system is checked by making thin films of the optical memory chalcogenide glass Ge{sub 2}Sb{sub 2}Te{sub 5} (GST). Energy dispersive x-ray analysis shows that the flash evaporation preserves the stoichiometry in thin films.

  6. May 2003 NREL/CP-520-33933 Amorphous and Thin-Film

    E-Print Network [OSTI]

    Deng, Xunming

    May 2003 · NREL/CP-520-33933 Amorphous and Thin-Film Silicon B.P. Nelson, H.A. Atwater, B. von and Thin-Film Silicon Brent P. Nelson,1 Harry A. Atwater,2 Bolko von Roedern,1 Jeff Yang,3 Paul Sims,4 in the Amorphous and Thin-Film Silicon session at the National Center for Photovoltaics and Solar Program Review

  7. DISSERTATION IMPACT OF SECONDARY BARRIERS ON CuIn1-xGaxSe2 SOLAR-CELL

    E-Print Network [OSTI]

    Sites, James R.

    , it is important that red-light J-V of CIS solar cells be distortion-free. It was shown that one approach to reduceDISSERTATION IMPACT OF SECONDARY BARRIERS ON CuIn1-xGaxSe2 SOLAR-CELL OPERATION Submitted by Alexei Impact of Secondary Barriers on CuIn1-xGaxSe2 Solar-Cell Operation Thin-film solar cells based on CuInSe2

  8. Vertically Aligned Nanocomposite Thin Films 

    E-Print Network [OSTI]

    Bi, Zhenxing

    2012-07-16

    and epitaxial growth ability on given substrates. In the present work, we investigated unique epitaxial two-phase VAN (BiFeO3)x:(Sm2O3)1-x and (La0.7Sr0.3MnO3)x:(Mn3O4)1-x thin film systems by pulsed laser deposition. These VAN thin films exhibit a highly...

  9. Preparation of thin film high temperature superconductors

    SciTech Connect (OSTI)

    VenKatesan, X.X.T.; Li, Q.; Findikoglu, A.; Hemmick, D. . Dept. of Physics); Wu, X.D. ); Inam, A.; Chang, C.C.; Ramesh, R.; Hwang, D.M.; Ravi, T.S.; Etemad, S.; Martinez, J.A.; Wilkens, B. )

    1991-03-01

    This paper addresses fundamental issues in preparing high quality high T{sub c} YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} thin films. The techniques of inverted cylindrical magnetron sputtering and pulsed laser deposition are chosen as successful examples to illustrate how the key problems can be solved. The fabrication of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}/PrBa{sub 2}Cu{sub 3}O{sub 7{minus}x} superlattices where superconductivity in a single unit cell layer of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} was observed demonstrates the state of the art of thin film deposition of high T{sub c} materials. Systematic variations of the deposition parameters result in changes of superconducting and structural properties of the films that correlate with their microwave and infrared characteristics.

  10. Modeling of the electronic transport in multijunction solar cells

    SciTech Connect (OSTI)

    Rau, U.; Goldbach, M.

    1994-12-31

    Simulations of the electrical transport in multijunction thin-film solar cells made from polycrystalline silicon are presented. The authors investigate the effect of the grain size on the efficiency of the multijunction solar cell. Here, they concentrate on micro crystalline material with a high recombination velocity at the grain boundaries of 10{sup 4}cm/s. Typical results of their calculations demonstrate that based on the multijunction design structure consisting of 8 or more layers efficiencies of 14% may be obtained from 12--20 {micro}m thick solar cells.

  11. Conditioning effects on La1-xSrxMnO3-Yttria stabilized Zirconia electrodes for thin-film solid oxide fuel cells

    E-Print Network [OSTI]

    2002-01-01

    x MnO 3 -Yttria Stabilized Zirconia Electrodes for Thin-FilmMnO 3 -yttria stabilized zirconia) were deposited onto dense1.5 h in acetone, using zirconia milling media. The LSM- YSZ

  12. Electron drift-mobility measurements in polycrystalline CuIn1-xGaxSe2 solar cells

    E-Print Network [OSTI]

    Schiff, Eric A.

    .1063/1.3692165] The chalcopyrite alloys CuIn1ÀxGaxSe2 (CIGS) are the basis of very promising thin film solar cells, with solar con conduction band states.8,9 Empirical optimization of CIGS for solar cells thus appears to have led to lowElectron drift-mobility measurements in polycrystalline CuIn1-xGaxSe2 solar cells S. A. Dinca, E. A

  13. Quantification of thin film crystallographic orientation using X-ray diffraction with an area detector

    SciTech Connect (OSTI)

    Baker, Jessica L; Jimison, Leslie H; Mannsfeld, Stefan; Volkman, Steven; Yin, Shong; Subramanian, Vivek; Salleo, Alberto; Alivisatos, A Paul; Toney, Michael F

    2010-02-19

    As thin films become increasingly popular (for solar cells, LEDs, microelectronics, batteries), quantitative morphological information is needed to predict and optimize the film's electronic, optical and mechanical properties. This quantification can be obtained quickly and easily with X-ray diffraction using an area detector and synchrotron radiation in two simple geometries. In this paper, we describe a methodology for constructing complete pole figures for thin films with fiber texture (isotropic in-plane orientation). We demonstrate this technique on semicrystalline polymer films, self-assembled nanoparticle semiconductor films, and randomly-packed metallic nanoparticle films. This method can be immediately implemented to help understand the relationship between film processing and microstructure, enabling the development of better and less expensive electronic and optoelectronic devices.

  14. Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

    SciTech Connect (OSTI)

    Tadanaga, Kiyoharu, E-mail: tadanaga@chem.osakafu-u.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Duran, Alicia; Aparacio, Mario [Instituto de Cerámica y Vidrio, Consejo Superior de Investigaciones Científicas, Kelsen 5 (Campus de Cantoblanco), Madrid, 28049 (Spain)

    2014-05-01

    Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.

  15. Polycrystalline Silicon Solar Cells Fabricated by Pulsed Rapid Thermal Annealing of Amorphous Silicon 

    E-Print Network [OSTI]

    Lee, I-Syuan

    2014-05-07

    effect were also investigated. It has been demonstrated that a 30 nm thick amorphous silicon could be transformed into polycrystalline with 70%-80% of crystalline volume fraction in a short time. The thin-film polycrystalline silicon solar cells were...

  16. Amorphous Si Thin Film Based Photocathodes with High Photovoltage for Efficient Hydrogen Production

    E-Print Network [OSTI]

    Javey, Ali

    Amorphous Si Thin Film Based Photocathodes with High Photovoltage for Efficient Hydrogen Production for solar hydrogen production. With platinum as prototypical cocatalyst, a photocurrent onset potential of 0 for solar hydrogen production. KEYWORDS: Water splitting, hydrogen production, photochemistry, high

  17. Towards 3D mapping of BO? octahedron rotations at perovskite thin film heterointerfaces, unit cell by unit cell

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    He, Qian; Ishikawa, Ryo; Lupini, Andrew R.; Qiao, Liang; Moon, Eun Ju; Ovchinnikov, Oleg S.; May, Steven J.; Biegalski, Michael D.; Borisevich, Albina Y.

    2015-07-15

    The rich functionalities in the ABO? perovskite oxides originate, at least in part, from the ability of the corner-connected BO? octahedral network to host a large variety of cations through distortions and rotations. Characterizing these rotations, which have significant impact on both fundamental aspects of materials behavior and possible applications, remains a major challenge. In this work, we have developed a unique method to investigate BO? rotation patterns in complex oxides ABO? with unit cell resolution at heterointerfaces, where novel properties often emerge. Our method involves column shape analysis in ABF-STEM images of the ABO? heterointerfaces taken in specific orientations.more »The rotating phase of BO? octahedra can be identified for all three spatial dimensions without the need of case-by-case simulation. In several common rotation systems, quantitative measurements of all three rotation angles are now possible. Using this method, we examined interfaces between perovskites with distinct tilt systems as well as interfaces between tilted and untilted perovskites, identifying an unusual coupling behavior at the CaTiO?/LSAT interface. We believe this unique method will significantly improve our knowledge of the complex oxide heterointerfaces.« less

  18. Solar cells

    DOE Patents [OSTI]

    Peumans, Peter; Uchida, Soichi; Forrest, Stephen R.

    2013-06-18

    Organic photosensitive optoelectronic devices are disclosed. The devises are thin-film crystalline organic optoelectronic devices capable of generating a voltage when exposed to light, and prepared by a method including the steps of: depositing a first organic layer over a first electrode; depositing a second organic layer over the first organic layer; depositing a confining layer over the second organic layer to form a stack; annealing the stack; and finally depositing a second electrode over the second organic layer.

  19. Recent improvements in materials for thin GaAs and multibandgap solar cells

    SciTech Connect (OSTI)

    Benner, J.P.

    1985-05-01

    The High Efficiency Concepts Program at SERI supports research on III-V compound semiconductors with the objective of achieving the maximum attainable photovoltaic conversion efficiencies for terrestrial solar electric power. The outcome of this research may also affect the future of space photovoltaic cells. While the interest in thin-film, high-efficiency solar cells for terrestrial applications is driven principally by consideration of system costs, such cells would also improve the power density of space power arrays.

  20. Microstructure of amorphous indium oxide and tin oxide thin films

    SciTech Connect (OSTI)

    Rauf, I.A.; Brown, L.M. (Univ. of Cambridge (United Kingdom))

    1994-03-15

    Indium oxide, tin oxide, and some other doped and undoped oxide semiconductors show an interesting and technologically important combination of properties. They have high luminous transparency, good electrical conductivity and high infrared reflectivity. Numerous techniques for depositing these materials have been developed and have undergone a number of changes during last two decades. An understanding of the basic physics of these materials has begun to dawn. Most of the literature on transparent conducting oxides consists of studying the dependence of the properties on the composition, preparation conditions, such as deposition rate, substrate temperature or post-deposition heat treatment. In this paper the authors have employed the transmission electron microscopy to study the microstructure of reactively evaporated, electron beam evaporated, ion-beam sputtered amorphous indium oxide and reactively evaporated amorphous tin oxide thin films. These films, which have received little attention in the past, can have enormous potential as transparent conductive coatings on heat-sensitive substrates and inexpensive solar cells.

  1. Thin film-coated polymer webs

    DOE Patents [OSTI]

    Wenz, Robert P. (Cottage Grove, MN); Weber, Michael F. (Shoreview, MN); Arudi, Ravindra L. (Woodbury, MN)

    1992-02-04

    The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

  2. Semiconductor-nanocrystal/conjugated polymer thin films

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Oakland, CA); Dittmer, Janke J. (Munich, DE); Huynh, Wendy U. (Munich, DE); Milliron, Delia (Berkeley, CA)

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  3. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    SciTech Connect (OSTI)

    Dutta, P. Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V.; Zheng, N.; Ahrenkiel, P.; Martinez, J.

    2014-09-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ?10{sup 7?}cm{sup ?2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300?cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  4. Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby

    DOE Patents [OSTI]

    Gonzalez, Franklin N. (Gainesville, FL); Neugroschel, Arnost (Gainesville, FL)

    1984-02-14

    A new solar cell structure is provided which will increase the efficiency of polycrystalline solar cells by suppressing or completely eliminating the recombination losses due to the presence of grain boundaries. This is achieved by avoiding the formation of the p-n junction (or other types of junctions) in the grain boundaries and by eliminating the grain boundaries from the active area of the cell. This basic concept can be applied to any polycrystalline material; however, it will be most beneficial for cost-effective materials having small grains, including thin film materials.

  5. Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer

    E-Print Network [OSTI]

    .1063/1.4789855] The toxicity of Cd and the scarcity of Te, In, and Ga used in CdTe and Cu(In,Ga)S2 (CIGS) thin-film solar cellsEnhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfideS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar cells were made

  6. Integration of subwavelength optical nanostructures for improved antireflection performance of mechanically flexible GaAs solar cells

    E-Print Network [OSTI]

    Yu, Edward T.

    to produce mechanically flexible, low-cost, light-weight, and high-efficiency GaAs thin-film solar cells of mechanically flexible GaAs solar cells fabricated by epitaxial lift-off Xiaohan Li a,n , Ping-Chun Li a , Li Ji bilayer antireflection coatings, respectively, with epitaxial lift-off single-junction GaAs solar cells

  7. Long-wave instabilities and saturation in thin film equations

    E-Print Network [OSTI]

    Pugh, Mary

    to shorter wavelengths which then dissipate the energy. The nonlinearity in the KS equation is advective.2) The equation arises as an interface model in bio-fluids [15], solar convec- tion [19], and binary alloys [48Long-wave instabilities and saturation in thin film equations A. L. Bertozzi Department

  8. Longwave instabilities and saturation in thin film equations

    E-Print Network [OSTI]

    Pugh, Mary

    then dissipate the energy. The nonlinearity in the KS equation is advective, and a#ects the dy­ namics di.2) The equation arises as an interface model in bio­fluids [15], solar convec­ tion [19], and binary alloys [48Long­wave instabilities and saturation in thin film equations A. L. Bertozzi Department

  9. The Ohio State University Readies for its Encore at the Solar...

    Broader source: Energy.gov (indexed) [DOE]

    in the entire history of Solar Decathlon to have a roof covered entirely in thin film solar cells. Walter explained that since the competition's limits on roof size were...

  10. The novel usage of spectroscopic ellipsometry for the development of amorphous Si solar cells

    E-Print Network [OSTI]

    Park, Byungwoo

    :H/mc-Si:H double junction or a-Si:H/a-SiGe:H/mc-Si:H triple junction are being researched. In the multi-junctionThe novel usage of spectroscopic ellipsometry for the development of amorphous Si solar cells Seung May 2010 Keywords: a-Si:H Thin film Si solar cell Spectroscopic ellipsometry (SE) a b s t r a c t We

  11. ZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY M.A. Contreras, 2

    E-Print Network [OSTI]

    Sites, James R.

    ZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY 1 M.A. Contreras, 2 T. Nakada, 2 M analysis between this type of solar cell and the slightly more efficient ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell for conversion efficiency above 20% in thin-film polycrystalline solar cells. It quantifies the gains in current

  12. Analysis of chemically deposited CdSe and CdS thin films

    E-Print Network [OSTI]

    Osuji, R U

    2002-01-01

    We have successfully deposited quality polycrystalline thin films of CdSe and CdS on Corning 7059 glass slides by the electroless chemical bath technique at room temperature (~27 $^\\circ$C). X-ray analysis confirmed the successful deposition of CdSe and CdS thin films. Our grown CdSe film thickness ranged from 0.10 $\\mu$m. to 0.80 $\\pm$ 0.01 $\\mu$m and the CdS film thickness ranged from 0.10 $\\mu$m to 1.00 $\\pm$ 0.01 $\\mu$m. The scanning electron micrograph of the films reveals uniform film surface. The energy gaps, $E_g$ determined for our CdSe and CdS films have average values of 1.70 $\\pm$ 0.04 eV and 2.15 $\\pm$ 0.04 eV respectively. The films have high absorbance in the 0.35 $\\mu$m - 0.85 $\\mu$m range. These qualities make them suitable for use in thin film solar cell technology.

  13. Nanocrystal Solar Cells

    E-Print Network [OSTI]

    Gur, Ilan

    2006-01-01

    Nov, 2005). Chapter 4 Hybrid solar cells with 3-dimensionalinorganic nanocrystal solar cells 5.1 Introduction In recentoperation of organic based solar cells and distinguish them

  14. Nanocrystal Solar Cells

    E-Print Network [OSTI]

    Gur, Ilan

    2006-01-01

    nanocrystal-polymer solar cells The full potential of hybridto reach the full potential of polymer blend solar cells.solar cells described here offer several potential

  15. Rechargeable thin-film electrochemical generator

    DOE Patents [OSTI]

    Rouillard, Roger (Beloeil, CA); Domroese, Michael K. (South St. Paul, MN); Hoffman, Joseph A. (Minneapolis, MN); Lindeman, David D. (Hudson, WI); Noel, Joseph-Robert-Gaetan (St-Hubert, CA); Radewald, Vern E. (Austin, TX); Ranger, Michel (Lachine, CA); Sudano, Anthony (Laval, CA); Trice, Jennifer L. (Eagan, MN); Turgeon, Thomas A. (Fridley, MN)

    2000-09-15

    An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

  16. Rechargeable thin-film lithium batteries

    SciTech Connect (OSTI)

    Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

    1993-09-01

    Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

  17. COMPARISON OF TRAP STATES BETWEEN CIGSS/CdS/ZnO AND Cd PE CIGSS/ZnO CELLS P.K. Johnson, A.O. Pudov, J.R. Sites

    E-Print Network [OSTI]

    Sites, James R.

    (CIGS) thin films were treated in Cd solutions (Cd PE treatment) yielded solar cells with efficiencies surface can produce a cell comparable to the best CdS/CIGS cells. We extend this work to include CIGSS Defects - 3 1. INTRODUCTION Polycrystalline CIGS thin film photovoltaic cells are known for their high

  18. Numerical analysis for high-efficiency GaAs solar cells fabricated on Si substrates

    SciTech Connect (OSTI)

    Yamaguchi, M.; Amano, C.; Itoh, Y.

    1989-07-15

    This paper describes some recent developments in GaAs thin-film solar cells fabricated on Si substrates by metalorganic chemical vapor deposition and numerically analyzes them.GaAs solar cells with efficiency of more than 18% are successfully fabricated on Si substrates by reducing the dislocation density. Photovoltaic properties of GaAs/Si cells are analyzed by considering the effect of nonuniform dislocation distribution on recombination properties of GaAs thin films on Si substrates. Numerical analysis shows that the effect of majority-carrier trapping must be considered. High efficiency GaAs solar cells with total-area efficiency of over 20% on Si substrates can be realized if dislocation density can be reduced to less than 5/times/10/sup 5/ cm/sup /minus/2/.

  19. Properties of zirconia thin films deposited by laser ablation

    SciTech Connect (OSTI)

    Cancea, V. N.; Filipescu, M.; Colceag, D.; Dinescu, M.; Mustaciosu, C.

    2013-11-13

    Zirconia thin films have been deposited by laser ablation of a ceramic ZrO{sub 2} target in vacuum or in oxygen background at 0.01 mbar. The laser beam generated by an ArF laser (?=193 nm, ?=40 Hz) has been focalized on the target through a spherical lens at an incident angle of 45°. The laser fluence has been established to a value from 2.0 to 3.4 Jcm{sup ?2}. A silicon (100) substrate has been placed parallel to the target, at a distance of 4 cm, and subsequently has been heated to temperatures ranging between 300 °C and 600 °C. Thin films morphology has been characterized by atomic force microscopy and secondary ion mass spectrometry. Biocompatibility of these thin films has been assessed by studying the cell attachment of L929 mouse fibroblasts.

  20. Structural and electrochemical characterization of two proton conducting oxide thin films for a microfabricated solid oxide fuel cell

    E-Print Network [OSTI]

    Capozzoli, Peter M

    2006-01-01

    The use of proton conducting oxide materials as an electrolyte offers the potential to reduce the operating temperature of a solid oxide fuel cell (SOFC), leading to improved thermal management and material compatibility. ...

  1. Microstructure, residual stress, and mechanical properties of thin film materials for a microfabricated solid oxide fuel cell

    E-Print Network [OSTI]

    Quinn, David John, Sc. D. Massachusetts Institute of Technology

    2006-01-01

    The microstructure and residual stress of sputter-deposited films for use in microfabricated solid oxide fuel cells are presented. Much of the work focuses on the characterization of a candidate solid electrolyte: Yttria ...

  2. Potential of Thin Films for use in Charged Particle Tracking Detectors

    E-Print Network [OSTI]

    J. Metcalfe; I. Mejia; J. Murphy; M. Quevedo; L. Smith; J. Alvarado; B. Gnade; H. Takai

    2014-11-06

    Thin Film technology has widespread applications in everyday electronics, notably Liquid Crystal Display screens, solar cells, and organic light emitting diodes. We explore the potential of this technology as charged particle radiation tracking detectors for use in High Energy Physics experiments such as those at the Large Hadron Collider or the Relativistic Heavy Ion Collider. Through modern fabrication techniques, a host of semiconductor materials are available to construct thin, flexible detectors with integrated electronics with pixel sizes on the order of a few microns. We review the material properties of promising candidates, discuss the potential benefits and challenges associated with this technology, and review previously demonstrated applicability as a neutron detector.

  3. BORON CONCENTRATION MEASUREMENTS AT THE I/P INTERFACE IN NIP A-SI SOLAR CELLS B.B. Van Aken1

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    , bulk plasmon energy using EELS 1 INTRODUCTION Roll-to-roll production of thin film Si solar cells has Solar Energy, P.O. Box 1, NL-1755 ZG Petten, the Netherlands 2 Center for Electron Nanoscopy, Technical, Forschungszentrum Jülich, D-52425 Jülich, Germany 4 CEA-Leti, MINATEC Campus, 17 rue des Martyrs, FR-38054 Grenoble

  4. Absorptive carbon nanotube electrodes: Consequences of optical interference loss in thin film solar cells

    E-Print Network [OSTI]

    Tait, Jeffrey G.; Volder, Michaël F. L. De; Cheyns, David; Heremans, Paul; Rand, Barry P.

    2015-03-19

    . View Article Online DOI: 10.1039/C5NR01119A 7 Materials and Methods The CNT ink used in these experiments was a MWCNT hydrocarbon suspension (Electra Colour™ - CNTBlack) provided by Owen Research. Patterned glass/ITO substrates were purchased from... Picoscan PicoSPM LE scanning probe microscope operated in tapping mode. Kelvin probe measurements were carried out with a Veeco Multimode AFM operated in lift mode at a height of 25 nm and temperature of 333 K. A gold coated Si tip (MikroMasch NSC36/Cr...

  5. High efficiency low cost thin film silicon solar cell design and method for making

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Denver, CO)

    1999-01-01

    A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

  6. High efficiency low cost thin film silicon solar cell design and method for making

    DOE Patents [OSTI]

    Sopori, B.L.

    1999-04-27

    A semiconductor device is described having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer. 9 figs.

  7. High efficiency, low cost, thin film silicon solar cell design and method for making

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Denver, CO)

    2001-01-01

    A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

  8. Industrial Upscaling of CdTe/CdS Thin Film Solar Cells , A. Bosioa

    E-Print Network [OSTI]

    Romeo, Alessandro

    of the module will be 60x120 cm2 and the production capacity of the line should be around 15 MW/year. Keywords contact is done with a layer containing a small amount of Cu. Due to the good photovoltaic properties

  9. CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield MunicipalTechnical Report:Speeding accessby a contractorEnergy, science, and7451 Clean EnergyNational

  10. New Selection Metric for Design of Thin-Film Solar Cell Absorber Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJessework usesofPublications64 2.251 2.211 2.196EnergySpectroscopic Limited

  11. Communications to the Editor Thin-Film Differential Scanning

    E-Print Network [OSTI]

    Allen, Leslie H.

    -mail: L-ALLEN9@uiuc.edu. Figure 1. MEMS-based calorimetric sensor for TDSC (not to scale). Volume 35. In this paper we demonstrate a recently developed MEMS-based thin-film differential scanning calorimetry (TDSC a microfabricated sensor shown in Figure 1 as a calorimetric cell. The sensor consists of a Si3Nx membrane supported

  12. Nanocrystal Solar Cells

    E-Print Network [OSTI]

    Gur, Ilan

    2006-01-01

    will enable optimal solar cell efficiencies in multiple bandlow cost, high efficiency hybrid solar cells. 4.6 Conclusioncosts and improving efficiencies of solar photovoltaic

  13. Preparation of CIGS-based solar cells using a buffered electrodeposition bath

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath (Littleton, CO)

    2007-11-20

    A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

  14. ORNL, Industry Collaboration Puts Spotlight on Solar T DOING...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for thin-film copper indium gallium di- selenide, a direct-bandgap material for solar cells. Ferro Corpora- tion (Independence, Ohio) is creating inks and pastes to be used for...

  15. Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization

    E-Print Network [OSTI]

    Bielecki, Anthony

    2013-01-01

    kesterite solar cell, Solar Energy Materials & Solar Cellsprecursor thin lms, Solar Energy Materials & Solar Cells [such as solar cells) due to lower material, energy, and

  16. Investigation of Solar Energy Transfer through Plasmonic Au Nanoparticle-doped Sol-derived TiO? Thin Films in Photocatalysis and Photovoltaics /

    E-Print Network [OSTI]

    Zelinski, Andrew

    2013-01-01

    20 Solar Energy Conversion Throughmeasurements. 2 Solar Energy Conversion Through PlasmonicsPlasmon Enhanced Solar-to-Fuel Energy Conversion. Nano Lett.

  17. Application of Single Wall Carbon Nanotubes as Transparent Electrodes in Cu(In,Ga)Se2-Based Solar Cells: Preprint

    SciTech Connect (OSTI)

    Contreras, M.; Barnes, T.; van de Lagemaat, J.; Rumbles, G.; Coutts, T. J.; Weeks, C.; Glatkowski, P.; Levitsky, I.; Peltola, J.

    2006-05-01

    We present a new thin-film solar cell structure in which the traditional transparent conductive oxide electrode (ZnO) is replaced by a transparent conductive coating consisting of a network of bundled single-wall carbon nanotubes. Optical transmission properties of these coatings are presented in relation to their electrical properties (sheet resistance), along with preliminary solar cell results from devices made using CuIn1-xGaxSe2 thin-film absorber materials. Achieving an energy conversion efficiency of >12% and a quantum efficiency of {approx}80% demonstrate the feasibility of the concept. A discussion of the device structures will be presented considering the physical properties of the new electrodes comparing current-voltage results from the new solar cell structure and those from standard ZnO/CdS/Cu(In,Ga)Se2/Mo solar cells.

  18. Nanopillar Photovoltaics: Photon Management and Junction Engineering for Next-Generation Solar Cells

    E-Print Network [OSTI]

    Mariani, Giacomo

    2013-01-01

    for efficient photovoltaic cells, Nat. Nanotechnol. 6, 568-for efficient photovoltaic cells, Nat. Nanotechnol. 6, 568-trapping in thin-film photovoltaic cells, Opt. Express 8,

  19. Thin film buried anode battery

    DOE Patents [OSTI]

    Lee, Se-Hee (Lakewood, CO); Tracy, C. Edwin (Golden, CO); Liu, Ping (Denver, CO)

    2009-12-15

    A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

  20. Predicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se2/CdS) solar cell interfaces and implications for improving performance

    E-Print Network [OSTI]

    Goddard III, William A.

    Predicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se2/CdS) solar cell (2014) Predicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se2/CdS) solar cell ZnO sputtering on the performance of Cu(In,Ga)Se2 thin film solar cells Appl. Phys. Lett. 105, 083906

  1. DIRECT EVIDENCE OF MG-ZN-P ALLOY FORMATION IN MG/ZN3P2 SOLAR CELLS Gregory M. Kimball

    E-Print Network [OSTI]

    Kimball, Gregory

    Te, CIGS, a-Si) for thin film photovoltaics. The record solar energy conversion efficiency for Zn3P2 cellsDIRECT EVIDENCE OF MG-ZN-P ALLOY FORMATION IN MG/ZN3P2 SOLAR CELLS Gregory M. Kimball 1 , Nathan S indicate that high efficiency should be realizable by optimization of Mg treatment in Mg/Zn3P2 solar cells

  2. Thin Film Encapsulation Methods for Large Area MEMS Packaging

    E-Print Network [OSTI]

    Mahajerin, Armon

    2012-01-01

    P. J. French, “Robust Wafer-Level Thin-Film Encapsulation ofThe Elastic Properties of Thin- Film Silicon Nitride,” IEEELPCVD Silicon Nitride Thin Films at Cryogenic Temperatures,”

  3. Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO); Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

    1998-03-24

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  4. CURRENT NEWS Sandwich Solar Cells May See Off Silicon

    E-Print Network [OSTI]

    Rogers, John A.

    to manufacture thin films of GaAs that also allowed versatility in the types of devices they could multiple layers of the material on a single wafer, creating a layered, "pancake" stack of GaAs thin films the photovoltaic (PV) cells are based on silicon. However, alternatives such as GaAs and other compound

  5. Atomistic surface erosion and thin film growth modelled over...

    Office of Scientific and Technical Information (OSTI)

    Atomistic surface erosion and thin film growth modelled over realistic time scales Citation Details In-Document Search Title: Atomistic surface erosion and thin film growth...

  6. Institute of Photo Electronic Thin Film Devices and Technology...

    Open Energy Info (EERE)

    Institute of Photo Electronic Thin Film Devices and Technology of Nankai University Jump to: navigation, search Name: Institute of Photo-Electronic Thin Film Devices and Technology...

  7. Solvothermal Thin Film Deposition of Electron Blocking Layers...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solvothermal Thin Film Deposition of Electron Blocking Layers Home > Research > ANSER Research Highlights > Solvothermal Thin Film Deposition of Electron Blocking Layers...

  8. High Temperature Thin Film Polymer Dielectric Based Capacitors...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Temperature Thin Film Polymer Dielectric Based Capacitors for HEV Power Electronic Systems High Temperature Thin Film Polymer Dielectric Based Capacitors for HEV Power Electronic...

  9. A Sensitivity Analysis of a Thin Film Conductivity Estimation...

    Office of Scientific and Technical Information (OSTI)

    Conference: A Sensitivity Analysis of a Thin Film Conductivity Estimation Method Citation Details In-Document Search Title: A Sensitivity Analysis of a Thin Film Conductivity...

  10. Multilayer Thin-Film Thermoelectric Materials for Vehicle Applications...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Multilayer Thin-Film Thermoelectric Materials for Vehicle Applications Multilayer Thin-Film Thermoelectric Materials for Vehicle Applications 2004 Diesel Engine Emissions Reduction...

  11. Semiconductor-nanocrystal/conjugated polymer thin films (Patent...

    Office of Scientific and Technical Information (OSTI)

    Semiconductor-nanocrystalconjugated polymer thin films Citation Details In-Document Search Title: Semiconductor-nanocrystalconjugated polymer thin films You are accessing a...

  12. Zinc oxide thin film acoustic sensor

    SciTech Connect (OSTI)

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah [Department of Physics , College of Science, Al-Mustansiriyah University, Baghdad (Iraq); Mansour, Hazim Louis [Department of Physics , College of Education, Al-Mustansiriyah University, Baghdad (Iraq)

    2013-12-16

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  13. Role of Polycrystalline Thin-Film PV Technologies in Competitive PV Module Markets: Preprint

    SciTech Connect (OSTI)

    von Roedern, B.; Ullal, H. S.

    2008-05-01

    This paper discusses the developments in thin-film PV technologies and provides an outlook on future commercial module efficiencies achievable based on today's knowledge about champion cell performance.

  14. NREL: News - NREL Solar Research Gains Two R&D 100 Awards

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Gains Two R&D 100 Awards July 17, 2008 An ultra-light, highly efficient solar cell and use of ink-jet printing to manufacture thin-film photovoltaics-both developed at...

  15. Nanocrystal Solar Cells

    E-Print Network [OSTI]

    Gur, Ilan

    2006-01-01

    basic bilayer CdTe/CdSe solar cells described above. Figurecomplete CdTe/CdSe nanocrystal solar cell (B). gap variationlength for CdSe-P3HT hybrid solar cells. (b) Current-voltage

  16. Nanocrystal Solar Cells

    E-Print Network [OSTI]

    Gur, Ilan

    2006-01-01

    of organic based solar cells and distinguish them from theirNov, 2005). Chapter 4 Hybrid solar cells with 3-dimensionalinorganic nanocrystal solar cells 5.1 Introduction In recent

  17. Nanocrystal Solar Cells

    E-Print Network [OSTI]

    Gur, Ilan

    2006-01-01

    inorganic nanocrystal solar cells 5.1 Introduction In recentoperation of organic based solar cells and distinguish themThe organic donor-acceptor solar cell relies on a type II

  18. Nanocrystal Solar Cells

    E-Print Network [OSTI]

    Gur, Ilan

    2006-01-01

    of organic based solar cells and distinguish them from theirinorganic nanocrystal solar cells 5.1 Introduction In recentNov, 2005). Chapter 4 Hybrid solar cells with 3-dimensional

  19. Nanocrystal Solar Cells

    E-Print Network [OSTI]

    Gur, Ilan

    2006-01-01

    Nov, 2005). Chapter 4 Hybrid solar cells with 3-dimensional5 All-inorganic nanocrystal solar cells 5.1 Introduction Inoperation of organic based solar cells and distinguish them

  20. NREL Designs Promising New Oxides for Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-04-01

    High-efficiency, thin-film solar cells require electrical contacts with high electrical conductivity, and the top contact must also have high optical transparency. This need is currently met by transparent conducting oxides (TCOs), which conduct electricity but are 90% transparent to visible light. Scientists at the National Renewable Energy Laboratory (NREL) have derived three key design principles for selecting promising materials for TCO contacts. NREL's application of these design principles has resulted in a 10,000-fold improvement in conductivity for one TCO material.

  1. Shielding superconductors with thin films

    E-Print Network [OSTI]

    Posen, Sam; Catelani, Gianluigi; Liepe, Matthias U; Sethna, James P

    2015-01-01

    Determining the optimal arrangement of superconducting layers to withstand large amplitude AC magnetic fields is important for certain applications such as superconducting radiofrequency cavities. In this paper, we evaluate the shielding potential of the superconducting film/insulating film/superconductor (SIS') structure, a configuration that could provide benefits in screening large AC magnetic fields. After establishing that for high frequency magnetic fields, flux penetration must be avoided, the superheating field of the structure is calculated in the London limit both numerically and, for thin films, analytically. For intermediate film thicknesses and realistic material parameters we also solve numerically the Ginzburg-Landau equations. It is shown that a small enhancement of the superheating field is possible, on the order of a few percent, for the SIS' structure relative to a bulk superconductor of the film material, if the materials and thicknesses are chosen appropriately.

  2. Final Report: Sintered CZTS Nanoparticle Solar Cells on Metal Foil; July 26, 2011 - July 25, 2012

    SciTech Connect (OSTI)

    Leidholm, C.; Hotz, C.; Breeze, A.; Sunderland, C.; Ki, W.; Zehnder, D.

    2012-09-01

    This is the final report covering 12 months of this subcontract for research on high-efficiency copper zinc tin sulfide (CZTS)-based thin-film solar cells on flexible metal foil. Each of the first three quarters of the subcontract has been detailed in quarterly reports. In this final report highlights of the first three quarters will be provided and details will be given of the final quarter of the subcontract.

  3. Structural and Optical Investigations of GaN-Si Interface for a Heterojunction Solar Cell

    SciTech Connect (OSTI)

    Williams, Joshua J.; Jeffries, April M.; Bertoni, Mariana I.; Williamson, Todd L.; Bowden, Stuart G.; Honsberg, Christiana B.

    2014-06-08

    In recent years the development of heterojunction silicon based solar cells has gained much attention, lea largely by the efforts of Panasonic’s HIT cell. The success of the HIT cell prompts the scientific exploration of other thin film layers, besides the industrially accepted amorphous silicon. In this paper we report upon the use of gallium nitride, grown by MBE at “low temperatures” (~200°C), on silicon wafers as one possible candidate for making a heterojunction solar cell; the first approximation of band alignments between GaN and Si; and the material quality as determined by X-ray diffraction.

  4. Structural characterization of thin film photonic crystals

    SciTech Connect (OSTI)

    Subramania, G.; Biswas, R.; Constant, K.; Sigalas, M. M.; Ho, K. M.

    2001-06-15

    We quantitatively analyze the structure of thin film inverse-opal photonic crystals composed of ordered arrays of air pores in a background of titania. Ordering of the sphere template and introduction of the titania background were performed simultaneously in the thin film photonic crystals. Nondestructive optical measurements of backfilling with high refractive index liquids, angle-resolved reflectivity, and optical spectroscopy were combined with band-structure calculations. The analysis reveals a thin film photonic crystal structure with a very high filling fraction (92{endash}94%) of air and a substantial compression along the c axis ({similar_to}22{endash}25%).

  5. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  6. Permanent laser conditioning of thin film optical materials

    DOE Patents [OSTI]

    Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

    1995-12-05

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

  7. Permanent laser conditioning of thin film optical materials

    DOE Patents [OSTI]

    Wolfe, C. Robert (Palo Alto, CA); Kozlowski, Mark R. (Pleasanton, CA); Campbell, John H. (Livermore, CA); Staggs, Michael (Tracy, CA); Rainer, Frank (Livermore, CA)

    1995-01-01

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

  8. Status of High Performance PV: Polycrystalline Thin-Film Tandems

    SciTech Connect (OSTI)

    Symko-Davies, M.

    2005-02-01

    The High-Performance Photovoltaic (HiPerf PV) Project was initiated by the U.S. Department of Energy to substantially increase the viability of photovoltaics (PV) for cost-competitive applications so that PV can contribute significantly to our energy supply and our environment. The HiPerf PV Project aims at exploring the ultimate performance limits of existing PV technologies, approximately doubling their sunlight-to-electricity conversion efficiencies during its course. This work includes bringing thin-film cells and modules toward 25% and 20% efficiencies, respectively, and developing multijunction concentrator cells and modules able to convert more than one-third of the sun's energy to electricity (i.e., 33% efficiency). This paper will address recent accomplishments of the NREL in-house research effort involving polycrystalline thin-film tandems, as well as the research efforts under way in the subcontracted area.

  9. Analytical determination of critical crack size in solar cells

    SciTech Connect (OSTI)

    Chen, C.P.

    1988-05-01

    Although solar cells usually have chips and cracks, no material specifications concerning the allowable crack size on solar cells are available for quality assurance and engineering design usage. Any material specifications that the cell manufacturers use were developed for cosmetic reasons that have no technical basis. Therefore, the Applied Solar Energy Corporation (ASEC) has sponsored a continuing program for the fracture mechanics evaluation of GaAs. Fracture mechanics concepts were utilized to develop an analytical model that can predict the critical crack size of solar cells. This model indicates that the edge cracks of a solar cell are more critical than its surface cracks. In addition, the model suggests that the material specifications on the allowable crack size used for Si solar cells should not be applied to GaAs solar cells. The analytical model was applied to Si and GaAs solar cells, but it would also be applicable to the semiconductor wafers of other materials, such as a GaAs thin film on a Ge substrate, using appropriate input data.

  10. Solar Cell Nanotechnology Final Technical Report

    SciTech Connect (OSTI)

    Das, Biswajit

    2014-05-07

    The objective of this project is to develop a low cost nonlithographic nanofabrication technology for the fabrication of thin film porous templates as well as uniform arrays of semiconductor nanostructures for the implementation of high efficiency solar cells. Solar cells based on semiconductor nanostructures are expected to have very high energy conversion efficiencies due to the increased absorption coefficients of semiconductor nanostructures. In addition, the thin film porous template can be used for optimum surface texturing of solar cells leading to additional enhancement in energy conversion efficiency. An important requirement for these applications is the ability to synthesize nanostructure arrays of different dimensions with good size control. This project employed nanoporous alumina templates created by the anodization of aluminum thin films deposited on glass substrates for the fabrication of the nanostructures and optimized the process parameters to obtain uniform pore diameters. An additional requirement is uniformity or regularity of the nanostructure arrays. While constant current anodization was observed to provide controlled pore diameters, constant voltage anodization was needed for regularity of the nanostructure arrays. Thus a two-step anodization process was investigated and developed in this project for improving the pore size distribution and pore periodicity of the nanoporous alumina templates. CdTe was selected to be the active material for the nanowires, and the process for the successful synthesis of CdTe nanowires was developed in this project. Two different synthesis approaches were investigated in this project, electrochemical and electrophoretic deposition. While electrochemical synthesis was successfully employed for the synthesis of nanowires inside the pores of the alumina templates, the technique was determined to be non-optimum due to the need of elevated temperature that is detrimental to the structural integrity of the nanoporous alumina templates. In order to eliminate this problem, electrophoretic deposition was selected as the more appropriate technique, which involves the guided deposition of semiconductor nanoparticles in the presence of ultrasonic energy to form the crystalline nanowires. Extensive experimental research was carried out to optimize the process parameters for formation of crystalline nanowires. It was observed that the environmental bath temperature plays a critical role in determining the structural integrity of the nanowires and hence their lengths. Investigation was carried out for the formation of semitransparent ohmic contacts on the nanowires to facilitate photocurrent spectroscopy measurements as well as for solar cell implementation. Formation of such ohmic contacts was found to be challenging and a process involving mechanical and electrochemical polishing was developed to facilitate such contacts. The use of nanoporous alumina templates for the surface texturing of mono- and multi-crystalline solar cells was extensively investigated by electrochemical etching of the silicon through the pores of the nanoporous templates. The processes for template formation as well as etching were optimized and the alumina/silicon interface was investigated using capacitance-voltage characterization. The process developed was found to be viable for improving solar cell performance.

  11. Nanomechanical properties of hydrated organic thin films

    E-Print Network [OSTI]

    Choi, Jae Hyeok

    2007-01-01

    Hydrated organic thin films are biological or synthetic molecularly thin coatings which impart a particular functionality to an underlying substrate and which have discrete water molecules associated with them. Such films ...

  12. Thin film production method and apparatus

    DOE Patents [OSTI]

    Loutfy, Raouf O. (Tucson, AZ); Moravsky, Alexander P. (Tucson, AZ); Hassen, Charles N. (Tucson, AZ)

    2010-08-10

    A method for forming a thin film material which comprises depositing solid particles from a flowing suspension or aerosol onto a filter and next adhering the solid particles to a second substrate using an adhesive.

  13. A thin film transistor driven microchannel device 

    E-Print Network [OSTI]

    Lee, Hyun Ho

    2005-02-17

    THIN FILM TRANSISTOR DRIVEN MICROCHANNEL DEVICE FOR PROTEIN AND DNA ELECTROPHORESIS A Dissertation by HYUN HO LEE Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements... for the degree of DOCTOR OF PHILOSOPHY December 2004 Major Subject: Chemical Engineering A THIN FILM TRANSISTOR DRIVEN MICROCHANNEL DEVICE FOR PROTEIN AND DNA ELECTROPHORESIS A Dissertation by HYUN HO LEE Submitted to Texas A...

  14. Thermal Management of Solar Cells

    E-Print Network [OSTI]

    Saadah, Mohammed Ahmed

    2013-01-01

    cell. The solar cell’s power conversion efficiency, ? is theEfficiency ..5 Thermal Managements of SolarTemperature on Efficiency Photons incident on a solar cell

  15. Optoelectronic simulation of GaAs solar cells with angularly selective filters

    SciTech Connect (OSTI)

    Kraus, Tobias Höhn, Oliver; Hauser, Hubert; Bläsi, Benedikt

    2014-02-07

    We discuss the influence of angularly selective filters on thin film gallium arsenide solar cells. For this reason, the detailed balance model was refined to fit our needs with respect to Auger recombination, reflection, transmission, and realistic absorption. For calculating real systems, an approach was made to include optical effects of angularly selective filters into electron-hole dynamic equations implemented in PC1D, a one dimensional solar cell calculation tool. With this approach, we find a relative V{sub oc} increase of 5% for an idealized 100?nm GaAs cell, including Auger recombination.

  16. An all-inorganic type-II heterojunction array with nearly full solar spectral response based on ZnO/ZnSe core/shell nanowires

    E-Print Network [OSTI]

    Nasipuri, Asis

    on inorganic or organic materials, such as silicon-based thin film solar cells,2 multi-junction solar cells,3 architecture. 1. Introduction Solar cells have been a subject of great interest due to the growing awareness and dye-sensitized solar cells (DSSCs).4 Nevertheless, most of them suffer from either high cost

  17. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

    1999-02-09

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  18. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

    1997-10-07

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  19. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, S.P.; Chamberlin, R.

    1999-02-09

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

  20. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, S.P.; Chamberlin, R.

    1997-10-07

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

  1. Optical and electronic properties of highly stable and textured hydrogenated ZnO:Al thin films

    SciTech Connect (OSTI)

    Hwang, Younghun, E-mail: younghh@ulsan.ac.kr [Basic Science Research Institute, University of Ulsan, Ulsan 680-749 (Korea, Republic of)] [Basic Science Research Institute, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Kim, Hyungmin [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of)] [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Um, Youngho, E-mail: yhum@ulsan.ac.kr [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of)] [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Park, Hyoyeol [Semiconductor Applications, Ulsan College, Ulsan 680-749 (Korea, Republic of)] [Semiconductor Applications, Ulsan College, Ulsan 680-749 (Korea, Republic of)

    2012-09-15

    Highlights: ? We investigate the impact of hydrogen treatment at high temperature of ZnO:Al film. ? Electrical properties of the ZnO:Al films improved due to hydrogen annealing. ? Optical properties of the ZnO:Al films enhanced due to hydrogen annealing. ? ZnO:Al film properties strongly depend on the hydrogen treatment temperature. -- Abstract: We have experimentally investigated the effects of hydrogen-annealing on the structural, electrical, and optical properties of Al-doped ZnO (ZnO:Al) thin films prepared by RF magnetron sputtering at room temperature. From the X-ray diffraction observations, the orientation of ZnO:Al films was found to be a c-axis in the hexagonal structure. We found that intentionally incorporated hydrogen plays an important role in n-type conduction as a donor, improving free carrier concentration and electrical stability. We simultaneously obtained improved optical transmission and enhanced absorption edge of the ZnO:Al film due to hydrogen-annealing. Our experimental data suggest the hydrogen-annealing process as an important role in the enhancement of electrical and optical properties, which is promising as a back reflector material for thin-film solar cells.

  2. NATURE MATERIALS | VOL 13 | MARCH 2014 | www.nature.com/naturematerials 233 hotovoltaic devices --which convert abundant, free solar

    E-Print Network [OSTI]

    Sargent, Edward H. "Ted"

    that provide a nanoparticle-size-dependent band- gap -- offer an avenue to tandem and multi-junction solar the simultaneous combination of low cost and high efficiency. Si-based solar cells1 , vapour-phase-processed thin-film solar cells such as CdS/CdTe (ref. 2) and next-generation solution- processed solar cells based

  3. Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier

    SciTech Connect (OSTI)

    Ip, Alexander H.; Labelle, André J.; Sargent, Edward H.

    2013-12-23

    Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells.

  4. CIBS Solar Cell Development Final Scientific/Technical Report

    SciTech Connect (OSTI)

    Exstrom, Christopher L.; Soukup, Rodney J.; Ianno, Natale J.

    2011-09-28

    Efforts to fabricate and study a new photovoltaic material, copper indium boron diselenide (CuInxB1-xSe2 or CIBS), were undertaken. Attempts to prepare CIBS using sputtering deposition techniques resulted in segregation of boron from the rest of elements in the material. CIBS nanocrystals were prepared from the reaction of elemental Se with CuCl, InCl3, and boric acid in solution, but the product material quickly decomposed upon heating that was required in attempts to convert the nanocrystals into a thin film. The investigation of the reasons for the lack of CIBS material stability led to new structure-property studies of closely-related photovoltaic systems as well as studies of new solar cell materials and processing methods that could enhance the development of next-generation solar technologies. A detailed compositional study of CuIn1-xAlxSe2 (CIAS, a system closely related to CIBS) revealed a non-linear correlation between crystal lattice size and the Al/(In+Al) ratios with dual-phase formation being observed. A new nanocrystal-to-thin-film processing method was developed for the preparation of CuIn1-xGaxSe2 (CIGS) thin films in which colloidal Se particles are sprayed in contact with CuIn1-xGaxS2 nanoparticles and heated in an argon atmosphere with no other Se source in the system. The process is non-vacuum and does not require toxic gases such as Se vapor or H2Se. Expertise gained from these studies was applied to new research in the preparation of thin-film pyrite FeS2, an attractive earth-abundant candidate material for next-generation photovoltaics. Three methods successfully produced pure pyrite FeS2 films: sulfurization of sputtered Fe films, chemical bath deposition, and sulfurization of Fe2O3 sol-gel precursors. The last method produced pinhole-free films that may be viable for device development. Nickel, platinum, and possibly carbon would appear to serve as good ohmic contact materials. While CdS has a reasonable conduction band energy match to serve as an n-type buffer material in a pyrite FeS2-based solar cell, the less toxic SnS2 is being explored for this purpose.

  5. Improved Electrodes and Electrolytes for Dye-Based Solar Cells

    SciTech Connect (OSTI)

    Harry R. Allcock; Thomas E. Mallouk; Mark W. Horn

    2011-10-26

    The most important factor in limiting the stability of dye-sensitized solar cells is the use of volatile liquid solvents in the electrolytes, which causes leakage during extended operation especially at elevated temperatures. This, together with the necessary complex sealing of the cells, seriously hampers the industrial-scale manufacturing and commercialization feasibilities of DSSCs. The objective of this program was to bring about a significant improvement in the performance and longevity of dye-based solar cells leading to commercialization. This had been studied in two ways first through development of low volatility solid, gel or liquid electrolytes, second through design and fabrication of TiO2 sculptured thin film electrodes.

  6. Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

    DOE Patents [OSTI]

    Brinker, Charles Jeffrey (Albuquerque, NM); Prakash, Sai Sivasankaran (Minneapolis, MN)

    1999-01-01

    A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

  7. Nanocrystal Solar Cells

    E-Print Network [OSTI]

    Gur, Ilan

    2006-01-01

    to create low-cost solar cells with performance andachieving stable and low-cost solar energy conversion.of large-scale solar power at low costs (1). The most

  8. Oxynitride Thin Film Barriers for PV Packaging

    SciTech Connect (OSTI)

    Glick, S. H.; delCueto, J. A.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2005-11-01

    Dielectric thin-film barrier and adhesion-promoting layers consisting of silicon oxynitride materials (SiOxNy, with various stoichiometry) were investigated. For process development, films were applied to glass (TCO, conductive SnO2:F; or soda-lime), polymer (PET, polyethylene terephthalate), aluminized soda-lime glass, or PV cell (a-Si, CIGS) substrates. Design strategy employed de-minimus hazard criteria to facilitate industrial adoption and reduce implementation costs for PV manufacturers or suppliers. A restricted process window was explored using dilute compressed gases (3% silane, 14% nitrous oxide, 23% oxygen) in nitrogen (or former mixtures, and 11.45% oxygen mix in helium and/or 99.999% helium dilution) with a worst-case flammable and non-corrosive hazard classification. Method employed low radio frequency (RF) power, less than or equal to 3 milliwatts per cm2, and low substrate temperatures, less than or equal to 100 deg C, over deposition areas less than or equal to 1000 cm2. Select material properties for barrier film thickness (profilometer), composition (XPS/FTIR), optical (refractive index, %T and %R), mechanical peel strength and WVTR barrier performance are presented.

  9. The interplay between spatially separated ferromagnetic and superconducting thin films 

    E-Print Network [OSTI]

    Sullivan, Isaac John

    2013-02-22

    characterized. 26 CHAPTER III THE SC/FM THIN FILM MULTILAYER The fabrication and characterization of the SC/FM film couples comprised the most de- manding and arduous work during the tenure of my thesis project. Many special parts were designed... EXPERIMENTAL DETAILS A. Ferromagnetic Thin Films 1. Film Preparation 2. Film Characterization B. Superconducting Thin Films 1. Film Preparation III THE SC/FM THIN FILM MULTILAYER . A. SC/FM Thin Film Multilayer Preparation B. SC/FM Thin Film Multilayer...

  10. Fundamental Materials Research and Advanced Process Development for Thin-Film CIS-Based Photovoltaics: Final Technical Report, 2 October 2001 - 30 September 2005

    SciTech Connect (OSTI)

    Anderson, T. J.; Li, S. S.; Crisalle, O. D.; Craciun, V.

    2006-09-01

    The objectives for this thin-film copper-indium-diselenide (CIS) solar cell project cover the following areas: Develop and characterize buffer layers for CIS-based solar cell; grow and characterize chemical-bath deposition of Znx Cd1-xS buffer layers grown on CIGS absorbers; study effects of buffer-layer processing on CIGS thin films characterized by the dual-beam optical modulation technique; grow epitaxial CuInSe2 at high temperature; study the defect structure of CGS by photoluminescence spectroscopy; investigate deep-level defects in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy; conduct thermodynamic modeling of the isothermal 500 C section of the Cu-In-Se system using a defect model; form alpha-CuInSe2 by rapid thermal processing of a stacked binary compound bilayer; investigate pulsed non-melt laser annealing on the film properties and performance of Cu(In,Ga)Se2 solar cells; and conduct device modeling and simulation of CIGS solar cells.

  11. NANOCOMPOSITE ENABLED SENSITIZED SOLAR CELL

    E-Print Network [OSTI]

    Phuyal, Dibya

    2012-01-01

    Solar Energy Materials and Solar Cells 93(10): 1728-1723,Solar Energy Materials and Solar Cells 92(8) 39. Sima, C.Y. , Warta, W. , Dunlop, E.D. Solar Cell efficiency tables (

  12. NANOCOMPOSITE ENABLED SENSITIZED SOLAR CELL

    E-Print Network [OSTI]

    Phuyal, Dibya

    2012-01-01

    glass contact Solar Energy Materials and Solar Cells 93(10):cells. Solar Energy Materials and Solar Cells 92(8) 39.potential of these materials for solar energy conversion,

  13. Thin film dielectric composite materials

    SciTech Connect (OSTI)

    Jia, Quanxi; Gibbons, Brady J.; Findikoglu, Alp T.; Park, Bae Ho

    2002-01-01

    A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

  14. Spatial localization of excitons and charge carriers in hybrid perovskite thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Simpson, Mary Jane; Doughty, Benjamin; Yang, Bin; Xiao, Kai; Ma, Ying -Zhong

    2015-07-21

    The fundamental photophysics underlying the remarkably high power conversion efficiency of organic-inorganic hybrid perovskite-based solar cells has been increasingly studied using complementary spectroscopic techniques. The spatially heterogeneous polycrystalline morphology of the photoactive layers owing to the presence of distinct crystalline grains has been generally neglected in optical measurements and therefore the reported results are typically averaged over hundreds or even thousands of such grains. Here, we apply femtosecond transient absorption microscopy to spatially and temporally probe ultrafast electronic excited-state dynamics in pristine methylammonium lead tri-iodide (CH3NH3PbI3) thin films and composite structures. We found that the electronic excited-state relaxation kinetics aremore »extremely sensitive to the sample location probed, which was manifested by position-dependent decay timescales and transient signals. As a result, analysis of transient absorption kinetics acquired at distinct spatial positions enabled us to identify contributions of excitons and free charge carriers.« less

  15. Tungsten-doped thin film materials

    DOE Patents [OSTI]

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  16. Mesoscale morphologies in polymer thin films.

    SciTech Connect (OSTI)

    Ramanathan, M.; Darling, S. B. (Center for Nanoscale Materials)

    2011-06-01

    In the midst of an exciting era of polymer nanoscience, where the development of materials and understanding of properties at the nanoscale remain a major R&D endeavor, there are several exciting phenomena that have been reported at the mesoscale (approximately an order of magnitude larger than the nanoscale). In this review article, we focus on mesoscale morphologies in polymer thin films from the viewpoint of origination of structure formation, structure development and the interaction forces that govern these morphologies. Mesoscale morphologies, including dendrites, holes, spherulites, fractals and honeycomb structures have been observed in thin films of homopolymer, copolymer, blends and composites. Following a largely phenomenological level of description, we review the kinetic and thermodynamic aspects of mesostructure formation outlining some of the key mechanisms at play. We also discuss various strategies to direct, limit, or inhibit the appearance of mesostructures in polymer thin films as well as an outlook toward potential areas of growth in this field of research.

  17. Thin Film Transistors On Plastic Substrates

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

    2004-01-20

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

  18. Vibration welding system with thin film sensor

    DOE Patents [OSTI]

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  19. Organic Tandem Solar Cells: Design and Formation

    E-Print Network [OSTI]

    Chen, Chun-Chao

    2015-01-01

    grids,? Solar Energy Materials and Solar Cells, 2011, 95(5),layer,? Solar Energy Materials and Solar Cells, 2013, 113,thickness,? Solar Energy Materials and Solar Cells, 2013,

  20. Organic Tandem Solar Cells: Design and Formation

    E-Print Network [OSTI]

    Chen, Chun-Chao

    2015-01-01

    grids,? Solar Energy Materials and Solar Cells, 2011, 95(5),thickness,? Solar Energy Materials and Solar Cells, 2013,analysis,? Solar Energy Materials and Solar Cells, [130] J.