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1

Thin film photovoltaic cell  

DOE Patents (OSTI)

A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

Meakin, John D. (Newark, DE); Bragagnolo, Julio (Newark, DE)

1982-01-01T23:59:59.000Z

2

Thin film photovoltaic device  

DOE Patents (OSTI)

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

Catalano, A.W.; Bhushan, M.

1982-08-03T23:59:59.000Z

3

Thin film photovoltaic device  

DOE Patents (OSTI)

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

Catalano, Anthony W. (Wilmington, DE); Bhushan, Manjul (Wilmington, DE)

1982-01-01T23:59:59.000Z

4

Thin Film Photovoltaics - Programmaster.org  

Science Conference Proceedings (OSTI)

Thin Film Structures for Energy Efficient Systems: Thin Film Photovoltaics ... Full- inorganic Heterojunction Ink-printed Solar Cells: Seigo Ito1; 1University of Hyogo ... electrochemical impedance spectroscopy (EIS) measurements were used for ...

5

Enhanced Thin Film Organic Photovoltaic Devices  

A novel structure design for thin film organic photovoltaic (OPV) devices provides a system for increasing the optical absorption in the active layer. ...

6

Thin-Film Photovoltaic Industry  

Science Conference Proceedings (OSTI)

This report presents an overview of the thin-film (TF) photovoltaic (PV) industry as of the third quarter of 2012, a time in the midst of very rapid changes.  The TFPV industry has seen significantly greater investment in the past 5 to 10 years than in any previous time and up until recently it seemed that this investment was on track to make TFPV a much larger player in the overall PV market.  However, market dynamics have conspired to dim TFPV’s near-term prospects and ...

2012-11-30T23:59:59.000Z

7

SunShot Initiative: Thin Film Photovoltaics Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Film Photovoltaics Research Thin Film Photovoltaics Research to someone by E-mail Share SunShot Initiative: Thin Film Photovoltaics Research on Facebook Tweet about SunShot Initiative: Thin Film Photovoltaics Research on Twitter Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Google Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Delicious Rank SunShot Initiative: Thin Film Photovoltaics Research on Digg Find More places to share SunShot Initiative: Thin Film Photovoltaics Research on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Thin Film Photovoltaics Research The U.S. Department of Energy (DOE) supports research and development of

8

NREL: Photovoltaics Research - Polycrystalline Thin-Film Materials...  

NLE Websites -- All DOE Office Websites (Extended Search)

in the area of polycrystalline thin-film materials and devices. Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

9

Thin film photovoltaic panel and method  

DOE Patents (OSTI)

A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

Ackerman, Bruce (El Paso, TX); Albright, Scot P. (El Paso, TX); Jordan, John F. (El Paso, TX)

1991-06-11T23:59:59.000Z

10

NREL: Photovoltaics Research - Thin Film Photovoltaic Partnership Project  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed the United States to attain world leadership in this area of solar technology. Three national R&D teams focused on thin-film semiconductor materials: amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS) and its alloys. The Module Reliability Team and Environmental Health and Safety Team were crosscutting. The teams comprised researchers from the solar industry, academia, and NREL who focused their efforts on improving materials, devices, and manufacturing processes-all

11

Solar photovoltaic technology: The thin film option  

DOE Green Energy (OSTI)

Photovoltaics (PV) the direct conversion of sunlight to electricity was first discovered by scientists at the Bell Labs in 1954. In the late 1960's and 1970's most of the solar cell technology has been used for space applications to power satellites. The main work horse for the PV technology has been crystalline silicon (Si) solar cells. Over the past 15 years this has led to cost reduction from $35/kWh to about $0.30/kWh at the present time. Demonstrated reliability of 20 years or more has resulted in acceptance by several utilities. However, cost reductions in crystalline Si solar cells have been limited by the cost of wafering of ingots and the attendant loss of material. A number of Si sheet solar cells are also being investigated. In the past decade the emphasis of the research and development effort has been focused on thin film solar cells, which have the potential for generating power at much lower cost of $1-2/Wp. Thin film solar cells that are presently being investigated and are generating global attention are: amorphous silicon (a-Si:H), cadmium telluride (CdTe), and copper indium diselenide (CuInSe/sub 2,/ or CIS). In the past few years, considerable progress has been; made by all three of these thin film solar cells. This paper reviews the current status and future potential of these exiting thin film solar cell technologies.

Ullal, H.S.; Zweibel, K.; Sabisky, E.S.; Surek, T.

1988-01-01T23:59:59.000Z

12

Thin film photovoltaic device with multilayer substrate  

DOE Patents (OSTI)

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Catalano, Anthony W. (Rushland, PA); Bhushan, Manjul (Wilmington, DE)

1984-01-01T23:59:59.000Z

13

Photovoltaic Polycrystalline Thin-Film Cell Basics | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Polycrystalline Thin-Film Cell Basics Polycrystalline Thin-Film Cell Basics Photovoltaic Polycrystalline Thin-Film Cell Basics August 20, 2013 - 2:36pm Addthis Polycrystalline thin-film cells are made of many tiny crystalline grains of semiconductor materials. The materials used in these cells have properties that are different from those of silicon. Thin-film cells have many advantages over their thick-film counterparts. For example, they use much less material. The cell's active area is usually only 1 to 10 micrometers thick, whereas thick films typically are 100 to 300 micrometers thick. Also, thin-film cells can usually be manufactured in a large-area process, which can be an automated, continuous production process. Finally, they can be deposited on flexible substrate materials. The term thin film comes from the method used to deposit the film, not from

14

A survey of thin-film solar photovoltaic industry & technologies  

E-Print Network (OSTI)

A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

Grama, Sorin

2007-01-01T23:59:59.000Z

15

The state of the art of thin-film photovoltaics  

DOE Green Energy (OSTI)

Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

Surek, T.

1993-10-01T23:59:59.000Z

16

Polycrystalline Thin Film Used in Photovoltaics  

Energy.gov (U.S. Department of Energy (DOE))

Polycrystalline thin-film cells are made of many tiny crystalline grains of semiconductor materials. The materials used in these cells have properties that are different from those of silicon.

17

NREL: Energy Analysis - Crystalline Silicon and Thin Film Photovoltaic  

NLE Websites -- All DOE Office Websites (Extended Search)

Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Assessment Harmonization Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics (Fact Sheet) Cover of the Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics factsheet Download the Fact Sheet Over the last 30 years, hundreds of life cycle assessments (LCAs) have been conducted and published for a variety of residential and utility-scale solar photovoltaic (PV) systems with wide-ranging results. The inconsistencies in these results can be attributed to the technologies evaluated-such as differing system designs, real-world versus conceptual systems, or technology improvements over time-and life cycle assessment methods and assumptions. To better understand greenhouse gas (GHG) emissions from commercial

18

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b  

E-Print Network (OSTI)

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b , Ounsi of an absorbing planar photonic crystal within a thin film photovoltaic cell. The devices are based on a stack with large areas. Keywords: Photonic crystal, Photovoltaic solar cell, Thin film solar cell, Hydrogenated

Paris-Sud XI, Université de

19

Thin film photovoltaic device and process of manufacture  

DOE Patents (OSTI)

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Albright, S.P.; Chamberlin, R.

1997-10-07T23:59:59.000Z

20

Thin film photovoltaic device and process of manufacture  

DOE Patents (OSTI)

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

1997-10-07T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Thin film photovoltaic device and process of manufacture  

DOE Patents (OSTI)

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Albright, S.P.; Chamberlin, R.

1999-02-09T23:59:59.000Z

22

Thin film photovoltaic device and process of manufacture  

DOE Patents (OSTI)

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

1999-02-09T23:59:59.000Z

23

Thin film cadmium telluride photovoltaic cells  

DOE Green Energy (OSTI)

This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

Compaan, A.; Bohn, R. (Toledo Univ., OH (United States))

1992-04-01T23:59:59.000Z

24

SPUTTERED THIN FILM PHOTOVOLTAICS - Home - Energy ...  

for photovoltaic (PV) applications .These processes result in films with better unif ormity over ... ultimately resulting in a more efficient solar ce ...

25

Polycrystalline thin-film technology: Recent progress in photovoltaics  

DOE Green Energy (OSTI)

Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe{sub 2}), cadmium telluride (CdTe), and thin-film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin-film CuInSe{sub 2}, has made some rapid advances in terms of high efficiency and long-term reliability. For CuInSe{sub 2} power modules, a world record has been reported on a 0.4-m{sup 2} module with an aperture-area efficiency of 10.4% and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe{sub 2} modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 cm{sup 2}. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10%; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

1991-12-01T23:59:59.000Z

26

Polycrystalline Thin Film Photovoltaics: From the Laboratory to Solar Fields; Preprint  

DOE Green Energy (OSTI)

We review the status of commercial polycrystalline thin-film solar cells and photovoltaic (PV) modules, including current and projected commercialization activities.

von Roedern, B.; Ullal, H. S.; Zweibel, K.

2006-05-01T23:59:59.000Z

27

Single-Crystalline Thin Film Used in Photovoltaics  

Energy.gov (U.S. Department of Energy (DOE))

Single-crystalline thin films are made from gallium arsenide (GaAs), a compound semiconductor that is a mixture of gallium and arsenic.

28

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network (OSTI)

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells thin film work. The most pressing current need is to determine how to extend cell life, particularly

Paris-Sud XI, Université de

29

Data mining and statistical techniques for characterizing the performance of thin-film photovoltaic modules  

Science Conference Proceedings (OSTI)

A method for characterizing the performance ratio of thin-film photovoltaic modules based on the use of data mining and statistical techniques is developed. In general, this parameter changes when modules are working in outdoor conditions depending on ... Keywords: Data mining, Performance ratio, Photovoltaic modules, Solar spectral distribution, Statistical models

Rafael Moreno Sáez, Mariano Sidrach-De-Cardona, Llanos Mora-López

2013-12-01T23:59:59.000Z

30

Method and apparatus for increasing the durability and yield of thin film photovoltaic devices  

DOE Patents (OSTI)

Thin film photovoltaic cells having a pair of semiconductor layers between an opaque and a transparent electrical contact are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device.

Phillips, James E. (Newark, DE); Lasswell, Patrick G. (Newark, DE)

1987-01-01T23:59:59.000Z

31

Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint  

DOE Green Energy (OSTI)

We report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. In CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.

Ullal, H. S.; von Roedern, B.

2007-09-01T23:59:59.000Z

32

2 Thin Films Prepared by Sequential Evaporation for Photovoltaic  

Science Conference Proceedings (OSTI)

The defects of Cu-Se di-vacancies are formed in Cu(In,Ga)Se2 thin films and influence to the solar cell performance. In this study, we have fabricated Cu(In ...

33

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1996-01-01T23:59:59.000Z

34

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells. 4 figs.

Lauf, R.J.

1996-04-02T23:59:59.000Z

35

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

36

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells. 4 figures.

Lauf, R.J.

1994-04-26T23:59:59.000Z

37

Thin Film Materials and Processing Techniques for a Next Generation Photovoltaic Device: Cooperative Research and Development Final Report, CRADA Number CRD-12-470  

DOE Green Energy (OSTI)

This research extends thin film materials and processes relevant to the development and production of a next generation photovoltaic device.

van Hest, M.

2013-08-01T23:59:59.000Z

38

Photovoltaic Single-Crystalline, Thin-Film Cell Basics | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Single-Crystalline, Thin-Film Cell Basics Single-Crystalline, Thin-Film Cell Basics Photovoltaic Single-Crystalline, Thin-Film Cell Basics August 20, 2013 - 2:50pm Addthis Single-crystalline thin films are made from gallium arsenide (GaAs), a compound semiconductor that is a mixture of gallium and arsenic. Gallium arsenide (GaAs) is a compound semiconductor, a mixture of gallium and arsenic. Gallium is a byproduct of the smelting of other metals, notably aluminum and zinc, and it is rarer than gold. Arsenic is not rare, but it is poisonous. Gallium arsenide has been developed for use in solar cells at about the same time that it has been developed for light-emitting diodes, lasers, and other electronic devices that use light. GaAs solar cells offer several benefits: The GaAs bandgap is 1.43 eV-nearly ideal for single-junction solar

39

Method and apparatus for increasing the durability and yield of thin film photovoltaic devices  

DOE Patents (OSTI)

Thin film photovoltaic cells having a pair of semiconductor layers between an opaque and a transparent electrical contact are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device. 10 figs.

Phillips, J.E.; Lasswell, P.G.

1987-02-03T23:59:59.000Z

40

Advances in thin-film solar cells for lightweight space photovoltaic power  

SciTech Connect

The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuInSe2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuInSe2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

Landis, G.A.; Bailey, S.G.; Flood, D.J.

1989-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

The Potential for Thin-Film Photovoltaic Cells  

Science Conference Proceedings (OSTI)

In this paper the potential for photovoltaic power generation is considered in terms of the photovoltaic generation facilities and the facflities for manufacturing the cell material. Significant quantities of electricity require very-large-scale manufacturing ...

T. W. Fraser Russell; Vikram L. Dalal

1981-08-01T23:59:59.000Z

42

Energy Basics: Polycrystalline Thin Film Used in Photovoltaics  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Energy Basics Renewable Energy Printable Version Share this resource Biomass Geothermal Hydrogen Hydropower Ocean Solar Photovoltaics Cells Systems Concentrating Solar...

43

Energy Basics: Single-Crystalline Thin Film Used in Photovoltaics  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Energy Basics Renewable Energy Printable Version Share this resource Biomass Geothermal Hydrogen Hydropower Ocean Solar Photovoltaics Cells Systems Concentrating Solar...

44

High-Efficiency Photovoltaics at Thin Film Costs  

Time (Years) 0-+ 5. 10. 15. 20. 25. Opportunity. Technology. ... • 15 years renewable energy business development ... High-Efficiency Photovoltaics at ...

45

Interim qualification tests and procedures for terrestrial photovoltaic thin-film flat-plate modules  

DOE Green Energy (OSTI)

This document provides recommended procedures and specifications for qualification tests that are structured to evaluate terrestrial thin-film flat-plate photovoltaic nonconcentrating modules intended for power generation applications. The qualification tests provided in this document are designed to evaluate flat-plate thin-film photovoltaic (PV) module design performance and susceptibility to known failure mechanisms. Emphasis is placed on testing and evaluating module performance characteristics and design features that will affect possible degradation of module performance and physical properties resulting from solar exposure, environmental weathering, mechanical loading, corrosion, and module shadowing. Because of limited thin-film module field operation experience and the evolutionary nature of new thin-film module material technologies and designs, these tests should not be considered definitive or complete, nor do they provide a basis to predict 30-year field life. Current understanding of failure and degradation mechanisms and the relationship between accelerated tests and field reliability is not sufficient to allow accurate estimation of life-expectancy, nor are the cycling tests given in this document considered to be equivalent to a full 30-year field exposure. However, the test and evaluation procedures given in this document provide a common approach for conducting qualification tests. Acceptable results from these tests should provide reasonable assurance that the modules that pass these tests will perform reliably in the field but for an unspecified period of time. 8 refs., 6 figs.

DeBlasio, R.; Mrig, L.; Waddington, D.

1990-01-01T23:59:59.000Z

46

Partially-disordered photonic-crystal thin films for enhanced and robust photovoltaics  

E-Print Network (OSTI)

We present a general framework for the design of thin-film photovoltaics based on a partially-disordered photonic crystal that has both enhanced absorption for light trapping and reduced sensitivity to the angle and polarization of incident radiation. The absorption characteristics of different lattice structures are investigated as an initial periodic structure is gradually perturbed. We find that an optimal amount of disorder controllably introduced into a multi-lattice photonic crystal causes the characteristic narrow-band, resonant peaks to be broadened resulting in a device with enhanced and robust performance ideal for typical operating conditions of photovoltaic applications.

Oskooi, Ardavan; Tanaka, Yoshinori; Shigeta, Hiroaki; Kawakami, Yoichi; Noda, Susumu

2012-01-01T23:59:59.000Z

47

High efficiency thin-film multiple-gap photovoltaic device  

SciTech Connect

A photovoltaic device includes at least two solar cells made from Group IV elements or their alloys in the amorphous state mounted on a substrate. The outermost or first cell has a larger bandgap than the second cell. Various techniques are utilized to improve the efficiency of the device.

Dalal, Vikram L. (Newark, DE)

1983-01-01T23:59:59.000Z

48

Low Cost Thin Film Building-Integrated Photovoltaic Systems  

DOE Green Energy (OSTI)

The goal of the program is to develop 'LOW COST THIN FILM BUILDING-INTEGRATED PV SYSTEMS'. Major focus was on developing low cost solution for the commercial BIPV and rooftop PV market and meet DOE LCOE goal for the commercial market segment of 9-12 cents/kWh for 2010 and 6-8 cents/kWh for 2015. We achieved the 2010 goal and were on track to achieve the 2015 goal. The program consists of five major tasks: (1) modules; (2) inverters and BOS; (3) systems engineering and integration; (4) deployment; and (5) project management and TPP collaborative activities. We successfully crossed all stage gates and surpassed all milestones. We proudly achieved world record stable efficiencies in small area cells (12.56% for 1cm2) and large area encapsulated modules (11.3% for 800 cm2) using a triple-junction amorphous silicon/nanocrystalline silicon/nanocrystalline silicon structure, confirmed by the National Renewable Energy Laboratory. We collaborated with two inverter companies, Solectria and PV Powered, and significantly reduced inverter cost. We collaborated with three universities (Syracuse University, University of Oregon, and Colorado School of Mines) and National Renewable Energy Laboratory, and improved understanding on nanocrystalline material properties and light trapping techniques. We jointly published 50 technical papers in peer-reviewed journals and International Conference Proceedings. We installed two 75kW roof-top systems, one in Florida and another in New Jersey demonstrating innovative designs. The systems performed satisfactorily meeting/exceeding estimated kWh/kW performance. The 50/50 cost shared program was a great success and received excellent comments from DOE Manager and Technical Monitor in the Final Review.

Dr. Subhendu Guha; Dr. Jeff Yang

2012-05-25T23:59:59.000Z

49

Thin-film cadmium telluride photovoltaics: ES and H issues, solutions, and perspectives  

SciTech Connect

Photovoltaics (PV) is a growing business worldwide, with new technologies evolving towards potentially large-volume production. PV use produces no emissions, thus offsetting many potential environmental problems. However, the new PV technologies also bring unfamiliar environment, safety, and health (ES and H) challenges that require innovative solutions. This is a summary of the issues, solutions, and perspectives associated with the use of cadmium in one of the new and important PV technologies: thin-film, cadmium telluride (CdTe) PV, which is being developed and commercialized by several companies including Solar Cells Inc. (Toledo, Ohio), BP Solar (Fairfield, California), and Matsushita (Japan). The principal ES and H issue for thin-film cadmium telluride PV is the potential introduction of cadmium--a toxic heavy metal--into the air or water. The amount of cadmium in thin-film PV, however, is quite small--one nickel cadmium flashlight battery has about as much cadmium (7 g) as a square meter of PV module using current technology--and a typical cordless power tool will have 5--10 batteries. CdTe modules are also very well sealed, limiting the chance of release. Nonetheless, minimizing the amount of cadmium in cadmium telluride modules and preventing the introduction of that cadmium into the environment is a top priority for National Renewable Energy Laboratory researchers and cadmium telluride PV manufacturers.

Zweibel, K. [National Renewable Energy Lab., Golden, CO (US); Moskowitz, P.; Fthenakis, V. [Brookhaven National Lab., Upton, NY (US)

1998-02-01T23:59:59.000Z

50

Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint  

DOE Green Energy (OSTI)

The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

2011-09-01T23:59:59.000Z

51

Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe  

Science Conference Proceedings (OSTI)

The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.

Gessert, T. A.

2012-01-01T23:59:59.000Z

52

Environmental and health aspects of copper-indium-diselenide thin-film photovoltaic modules  

DOE Green Energy (OSTI)

Copper-indium-diselenide (CIS) is a semiconductor compound that can be used to produce thin-film photovoltaic modules. There is on-going research being conducted by various federal agencies and private industries to demonstrate the commercial viability of this material. Because this is a new technology, and because scant information about the health and environmental hazards associated with the use of this material is available, studies have been initiated to characterize the environmental mobility and environmental toxicology of this compound. The objective of these studies is to identify the environmental and health hazards associated with the production, use, and disposal of CIS thin-film photovoltaic modules. The program includes both experimental and theoretical components. Theoretical studies are being undertaken to estimate material flows through the environment for a range of production options as well as use and disposal scenarios. The experimental programs characterize the physical, chemical e.g. leachability and biological parameters e.g. EC{sub 50} in daphnia and algae, and feeding studies in rats.

Steinberger, H. [Fraunhofer Inst. for Solid State Technology, Munich (Germany); Thumm, W.; Freitag, R. [GSF-Inst. of Ecological Chemistry, Oberschleissheim (Germany); Moskowitz, P.D. [Brookhaven National Lab., Upton, NY (United States); Chapin, R. [National Inst. of Environmental Health Sciences, Research Triangle Park, NC (United States)

1994-12-31T23:59:59.000Z

53

Thin film heterojunction photovoltaic cells and methods of making the same  

DOE Patents (OSTI)

A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250.degree. C. and 500.degree. C. for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.

Basol, Bulent M. (Los Angeles, CA); Tseng, Eric S. (Los Angeles, CA); Rod, Robert L. (Los Angeles, CA)

1983-06-14T23:59:59.000Z

54

Commercial production of thin-film CdTe photovoltaic modules. 1995 annual report  

DOE Green Energy (OSTI)

This report presents a general overview of progress made in Golden Photon Inc.`s commercial production of thin-film CdTe photovoltaic modules. It describes the improvement in the number of batch runs processed through substrate deposition, all inter-connection, and encapsulation process steps; a progressive increase in the total number of panels processed each month; an improvement in cumulative process yields; and the continual attention given to modifying operating parameters of each major process step. The report also describes manpower status and staffing issues. The description of the status of subcontract progress includes engineering design; process improvement and development; cost improvement and raw materials; environment, safety, and health; and manufacturing cost and productivity optimization. Milestones and deliverables are also described.

Brog, T.K. [Golden Photon, Inc., CO (United States)

1997-02-01T23:59:59.000Z

55

Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module  

SciTech Connect

We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

2013-06-01T23:59:59.000Z

56

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts  

DOE Patents (OSTI)

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Jansen, Kai W. (Lawrenceville, NJ); Maley, Nagi (Exton, PA)

2000-01-01T23:59:59.000Z

57

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts  

DOE Patents (OSTI)

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Jansen, Kai W. (Lawrenceville, NJ); Maley, Nagi (Exton, PA)

2001-01-01T23:59:59.000Z

58

Functional requirements for component films in a solar thin-film photovoltaic/thermal panel  

SciTech Connect

The functional requirements of the component films of a solar thin-film photovoltaic/thermal panel were considered. Particular emphasis was placed on the new functions, that each layer is required to perform, in addition to their pre-existing functions. The cut-off wavelength of the window layer, required for solar selectivity, can be achieved with charge carrier concentrations typical of photovoltaic devices, and thus does not compromise electrical efficiency. The upper (semiconductor) absorber layer has a sufficiently high thermal conductivity that there is negligible temperature difference across the film, and thus negligible loss in thermal performance. The lower (cermet) absorber layer can be fabricated with a high ceramic content, to maintain high solar selectivity, without significant increase in electrical resistance. A thin layer of molybdenum-based cermet at the top of this layer can provide an Ohmic contact to the upper absorber layer. A layer of aluminium nitride between the metal substrate and the back metal contact can provide electrical isolation to avoid short-circuiting of series-connected cells, while maintaining a thermal path to the metal substrate and heat extraction systems. Potential problems of differential contraction of heated films and substrates were identified, with a recommendation that fabrication processes, which avoid heating, are preferable. (author)

Johnston, David [Power and Energy Research Group, School of Engineering, Northumbria University, Ellison Place, Newcastle upon Tyne NE1 8ST (United Kingdom)

2010-03-15T23:59:59.000Z

59

Production of thin-film photovoltaic cells: health and environmental effects  

SciTech Connect

Health and safety hazards in production of major thin-film photovoltaic cells are identified and characterized for their potential to cause health effects. These hazards are identified by examining process data, control technology availability, biomedical effects, and environmental standards. Quantitative estimates of material inputs and outputs and control costs were made on the basis of preliminary engineering designs of hypothetical facilities capable of manufacturing 10 MWp photovoltaic cells a year. The most significant potential hazards are associated with toxic and explosive gases. Emissions of toxic gases during normal operation can be controlled using available control technology. Accidental release of stored gases, however, will pose significant risks to both workers and the public, as atmospheric dispersion computer studies indicate. Possible release preventing options and release control options are examined. Explosive and flammable gases may present significant occupational safety hazards; gas handling systems will need to be carefully designed. High voltages and radio frequency equipment also require close attention for their potential to present occupational hazards. 10 refs., 2 figs., 5 tabs.

Fthenakis, V.M.; Moskowitz, P.D.

1985-10-01T23:59:59.000Z

60

Lessons Learned from the Photovoltaic Manufacturing Technology/PV Manufacturing R&D and Thin Film PV Partnership Projects  

DOE Green Energy (OSTI)

As the U.S. Department of Energy's (DOE's) Solar Energy Technologies Program initiates new cost-shared solar energy R&D under the Solar America Initiative (SAI), it is useful to analyze the experience gained from cost-shared R&D projects that have been funded through the program to date. This report summarizes lessons learned from two DOE-sponsored photovoltaic (PV) projects: the Photovoltaic Manufacturing Technology/PV Manufacturing R&D (PVMaT/PVMR&D) project and the Thin-Film PV Partnership project. During the past 10-15 years, these two projects have invested roughly $330 million of government resources in cost-shared R&D and leveraged another $190 million in private-sector PV R&D investments. Following a description of key findings and brief descriptions of the PVMaT/PVMR&D and Thin-Film PV Partnership projects, this report presents lessons learned from the projects.

Margolis, R.; Mitchell, R.; Zweibel, K.

2006-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Biaxial texturing of inorganic photovoltaic thin films using low energy ion beam irradiation during growth  

SciTech Connect

We describe our efforts to control the grain boundary alignment in polycrystalline thin films of silicon by using a biaxially textured template layer of CaF{sub 2} for photovoltaic device applications. We have chosen CaF{sub 2} as a candidate material due to its close lattice match with silicon and its suitability as an ion beam assisted deposition (mAD) material. We show that the CaF{sub 2} aligns biaxially at a thickness of {approx}10 nm and, with the addition of an epitaxial CaF{sub 2} layer, has an in-plane texture of {approx}15{sup o}. Deposition of a subsequent layer of Si aligns on the template layer with an in-plane texture of 10.8{sup o}. The additional improvement of in-plane texture is similar to the behavior observed in more fully characterized IBAD materials systems. A germanium buffer layer is used to assist in the epitaxial deposition of Si on CaF{sub 2} template layers and single crystal substrates. These experiments confirm that an mAD template can be used to biaxially orient polycrystalline Si.

Groves, Jaes R [Los Alamos National Laboratory; De Paula, Raymond F [Los Alamos National Laboratory; Hayes, Garrett H [STANFORD UNIV.; Li, Joel B [STANFORD UNIV.; Hammond, Robert H [STANFORD UNIV.; Salleo, Alberto [STANFORD UNIV.; Clemens, Bruce M [STANFORD UNIV.

2010-01-01T23:59:59.000Z

62

The Effects of Non-Uniform Electronic Properties on Thin Film Photovoltaics  

E-Print Network (OSTI)

World  Conf.  Photovoltaic   Energy  Conversion  (2003),  Conference  on  Photovoltaic  Energy  Conversion,  May  17 th  European  Photovoltaic  Solar  Energy  Conference,  

Brown, Gregory Ferguson

2011-01-01T23:59:59.000Z

63

In-Line Post-Process Scribing for Reducing Cell to Module Efficiency Gap in Monolithic Thin Film Photovoltaics  

E-Print Network (OSTI)

The gap between cell and module efficiency is a major challenge for all photovoltaic (PV) technologies. For monolithic thin film PV modules, a significant fraction of this gap has been attributed to parasitic shunts, and other defects, distributed across the module. In this paper, we show that it is possible to contain or isolate these shunt defects, using the state of the art laser scribing processes, after the fabrication of the series connected module is finished. We discuss three possible alternatives, and quantify the performance gains for each technique. We demonstrate that using these techniques, it is possible to recover up to 50% of the power lost to parasitic shunts, which results in 1-2% (absolute) increase in module efficiencies for typical thin film PV technologies.

Dongaonkar, Sourabh

2013-01-01T23:59:59.000Z

64

Polycrystalline Thin Film Photovoltaics: From the Laboratory to Solar Fields (Presentation)  

SciTech Connect

The conclusions of this report are that: (1) many issues how thin-film solar cells work remain unresolved, requiring further fundamental R and D effort; (2) commercial thin-film PV module production reached 29% in 2005 in the US, indicating much more rapid growth than crystalline Si PV; (3) commercial module performance is increasing based on current knowledge, more R and D will lead to further improvement; and (4) stability of thin-film modules is acceptable ({le} 1% per year power loss) if the right manufacturing processes are used for manufacturing.

von Roedern, B.; Ullal, H.; Zweibel, K.

2006-05-01T23:59:59.000Z

65

Thin-film CdTe and CuInSe{sub 2} photovoltaic technologies  

DOE Green Energy (OSTI)

Total-area conversion efficiency of 15%--15.8% have been achieved for thin-film CdTe and CIS solar cells. Modules with power output of 5--53 W have been demonstrated by several groups world-wide. Critical processes and reaction pathways for achieving excellent PV devices have been eluciated. Research, development and technical issues have been identified, which could result in potential improvements in device and module performance. A 1-kW thin-film CdTe array has been installed and is being tested. Multimegawatt thin-film CdTe manufacturing plants are expected to be completed in 1-2 years.

Ullal, H.S.; Zweibel, K.; von Roedern, B.G.

1993-08-01T23:59:59.000Z

66

22nd European Photovoltaic Solar Energy Conference, Milan, 3-7 September 2007 Cu(InGa)Se2 THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

22nd European Photovoltaic Solar Energy Conference, Milan, 3-7 September 2007 Cu(InGa)Se2 THIN-FILM SOLAR CELLS: COMPARATIVE LIFE-CYCLE ANALYSIS OF BUFFER LAYERS Vasilis M. Fthenakis and Hyung Chul Kim National Photovoltaic EH&S Research Center Brookhaven National Laboratory Upton, NY 11973, USA ABSTRACT

67

Flexible Ultra Moisture Barrier Film for Thin-Film Photovoltaic Applications  

Science Conference Proceedings (OSTI)

Flexible Thin-film photovoltaic (TFPV) is a low cost alternative to incumbent c-Si PV products as it requires less volume of costly semiconductor materials and it can potentially reduce installation cost. Among the TFPV options, copper indium gallium diselenide (CIGS) has the highest efficiency and is believed to be one of the most attractive candidates to achieve PV cost reduction. However, CIGS cells are very moisture sensitive and require module water vapor transmission rate (WVTR) of less than 1x10-4 gram of water per square meter per day (g-H2O/m2/day). Successful development and commercialization of flexible transparent ultra moisture barrier film is the key to enable flexible CIGS TFPV products, and thus enable ultimate PV cost reduction. At DuPont, we have demonstrated at lab scale that we can successfully make polymer-based flexible transparent ultra moisture barrier film by depositing alumina on polymer films using atomic layer deposition (ALD) technology. The layer by layer ALD approach results in uniform and amorphous structure which effectively reduces pinhole density of the inorganic coating on the polymer, and thus allow the fabrication of flexible barrier film with WVTR of 10-5 g-H2O/m2/day. Currently ALD is a time-consuming process suitable only for high-value, relatively small substrates. To successfully commercialize the ALD-on-plastic technology for the PV industry, there is the need to scale up this technology and improve throughput. The goal of this contract work was to build a prototype demonstrating that the ALD technology could be scaled-up for commercial use. Unfortunately, the prototype failed to produce an ultra-barrier film by the close of the project.

David M. Dean

2012-10-30T23:59:59.000Z

68

Defect engineering of cuprous oxide thin-films for photovoltaic applications  

E-Print Network (OSTI)

Thin-film solar cells are promising for renewable-energy applications due to their low material usage and inexpensive manufacturing potential, making them compatible with terawatts-level deployment. Cuprous oxide (Cu?O) ...

Lee, Yun Seog

2013-01-01T23:59:59.000Z

69

Stability Issues of Transparent Conducting Oxides (TCOs) for Thin-Film Photovoltaics (Presentation)  

DOE Green Energy (OSTI)

Study of stability issues of TCOs for thin-film PV, including degradation of optical, electrical, and structural properties of TCOs in damp heat and required encapsulation to prevent moisture egress.

Pern, J.

2008-12-01T23:59:59.000Z

70

Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems  

E-Print Network (OSTI)

21st European Photovoltaic Solar Energy Conference, Dresden,21st European Photovoltaic Solar Energy Conference, Dresden,International Energy Agency Photovoltaic Power System

Zhang, Teresa Weirui

2011-01-01T23:59:59.000Z

71

Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems  

E-Print Network (OSTI)

microcrystalline- silicon photovoltaic cell, B) range ofpayback of roof mounted photovoltaic cells. Boustead, I. andmicrocrystalline-silicon photovoltaic cell, B) range of

Zhang, Teresa Weirui

2011-01-01T23:59:59.000Z

72

Photovoltaic material and device measurements workshop: focus on polycrystalline thin film cells  

DOE Green Energy (OSTI)

The general purpose of the workshop was to accelerate the development of thin film solar cells by improving the versatility and reliability of material and device measurement techniques. Papers were presented under the following sessions: structural/chemical session; optical/electro-optical session; charge transport session; and poster session. Each paper was processed for EDB.

None

1979-01-01T23:59:59.000Z

73

Direct Thin Film Path to Low Cost, Large Area III-V Photovoltaics  

A team of Berkeley Lab researchers has invented the first vapor-liquid-solid (VLS) growth technology yielding III-V photovoltaics. The photovoltaics ...

74

Semiconductor-nanocrystal/conjugated polymer thin films  

DOE Patents (OSTI)

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Alivisatos, A. Paul (Oakland, CA); Dittmer, Janke J. (Munich, DE); Huynh, Wendy U. (Munich, DE); Milliron, Delia (Berkeley, CA)

2010-08-17T23:59:59.000Z

75

High-efficiency thin-film cadmium telluride photovoltaic cells. Annual technical report, January 20, 1996--January 19, 1997  

DOE Green Energy (OSTI)

The University of Toledo photovoltaics group has been instrumental in developing rf sputtering for CDs/CdTe thin-film solar cells. During the third phase of the present contract our work focussed on efforts to determine factors which limit the efficiency in our {open_quotes}all-sputtered{close_quotes} thin-film CdTe solar cells on soda-lime glass. We find that our all-sputtered cells, which are deposited at substantially lower temperature than those by sublimation or vapor deposition, require less aggressive CdCl{sub 2} treatments than do other deposition techniques and this is presumably related to CDs/CdTe interdiffusion. The CDs/CdTe interdiffusion process has been studied by several methods, including photoluminescence and capacitance-voltage measurements. Furthermore, we have deposited special thin bilayer films on quartz and borosilicate glass. Interdiffusion in these thin bilayers have been probed by Rutherford backscattering, with collaborators at Case Western Reserve University, and grazing incidence x-ray scattering (GIXS), with collaborators at the University at Buffalo and Brookhaven National Lab. Also, in order better to understand the properties of the ternary alloy material, we used laser physical vapor deposition to prepare a series of CdS{sub x}Te{sub 1-x} films on borosilicate glass. The composition of the alloy films was determined by wavelength dispersive x-ray spectroscopy at NREL. These films are currently being investigated by us and other groups at NREL and IEC.

Compaan, A.D.; Bohn, R.G.; Contreras-Puente, G. [Univ. of Toledo, OH (United States)

1997-08-01T23:59:59.000Z

76

High-efficiency, thin-film cadmium telluride photovoltaic cells. Annual subcontract report, 20 January 1994--19 January 1995  

DOE Green Energy (OSTI)

This report describes work performed to develop and optimize the process of radio frequency (RF) sputtering for the fabrication of thin-film solar cells on glass. The emphasis is on CdTe-related materials including CdTe, CdS, ZnTe, and ternary alloy semiconductors. Pulsed laser physical vapor deposition (LPVD) was used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. For the sputtering work, a two-gun sputtering chamber was implemented, with optical access for monitoring temperature and growth rate. We studied the optical and electrical properties of the plasmas produced by two different kinds of planar magnetron sputter guns with different magnetic field configurations and strengths. Using LPVD, we studied alloy semiconductors such as CdZnTe and heavily doped semiconductors such as ZnTe:Cu for possible incorporation into graded band gap CdTe-based photovoltaic devices.

Compaan, A.D.; Bohn, R.G.; Rajakarunanayake, Y. [Toledo Univ., OH (United States)

1995-08-01T23:59:59.000Z

77

Synthetic Metals 143 (2004) 283287 Construction of a photovoltaic device by deposition of thin films  

E-Print Network (OSTI)

. A photovoltaic cell is constructed by depositing polythiocyanogen on nanocrystalline films of n-TiO2 followed; Photovoltaic cell 1. Introduction Conducting polymers are extensively studied as potential materials technology become a great advantage. Many attempts have been made to construct photovoltaic cells

Matsik, Steven G.

78

Thin films: Past, present, future  

DOE Green Energy (OSTI)

This report describes the characteristics of the thin film photovoltaic modules necessary for an acceptable rate of return for rural areas and underdeveloped countries. The topics of the paper include a development of goals of cost and performance for an acceptable PV system, a review of current technologies for meeting these goals, issues and opportunities in thin film technologies.

Zweibel, K.

1995-04-01T23:59:59.000Z

79

Thin film cadmium telluride photovoltaic cells. Annual subcontract report, 23 July 1990--31 October 1991  

DOE Green Energy (OSTI)

This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

Compaan, A.; Bohn, R. [Toledo Univ., OH (United States)

1992-04-01T23:59:59.000Z

80

Material Needs for Thin-Film and Concentrator Photovoltaic Modules (Presentation)  

DOE Green Energy (OSTI)

This presentation describes the ongoing needs (manufacturability, availability, low cost, performance, and reliability) that drive the development of new photovoltaic materials.

Kurtz, S.

2009-12-04T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

High-throughput manufacturing of thin-film CdS/CdTe photovoltaic modules. Annual subcontract report, 16 September 1996--15 January 1998  

DOE Green Energy (OSTI)

Cadmium telluride (CdTe) is recognized as one of the leading materials for low-cost photovoltaic modules. Solar Cells, Inc., has developed this technology and is scaling its pilot production capabilities to a multi-megawatt level. The Photovoltaic Manufacturing Technology (PVMaT) subcontract supports these efforts. Activities during the third phase of the program concentrated on process development, equipment design and testing, quality assurance, ES and H programs, and large-scale next-generation coating-system prototype development. These efforts broadly addressed the issues of the manufacturing process for producing thin-film, monolithic CdS/CdTe photovoltaic modules.

Sandwisch, D.W. [Solar Cells, Inc., Toledo, OH (United States)

1998-08-01T23:59:59.000Z

82

Processing Materials Devices and Diagnostics for Thin Film Photovoltaics: Fundamental and Manufacturability Issues; Final Report, 5 September 2001 - 31 May 2008  

NLE Websites -- All DOE Office Websites (Extended Search)

20-45545 20-45545 April 2009 Processing Materials Devices and Diagnostics for Thin Film Photovoltaics: Fundamental and Manufacturability Issues Final Report 1 March 2005 - 30 November 2008 R.W. Birkmire, W.N. Shafarman, E. Eser, S.S. Hegedus, B.E. McCandless, K.D. Dobson, and S. Bowden University of Delaware Newark, Delaware National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, Colorado 80401-3393 303-275-3000 * www.nrel.gov NREL is a national laboratory of the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy Operated by the Alliance for Sustainable Energy, LLC Contract No. DE-AC36-08-GO28308 Subcontract Report NREL/SR-520-45545 April 2009 Processing Materials Devices and Diagnostics for Thin Film Photovoltaics: Fundamental and

83

Surfactant-Assisted Growth of CdS Thin Films for Photovoltaic Applications  

SciTech Connect

A common non-ionic surfactant, Triton X-100, was used to modify the chemical bath deposition (CBD) of CdS "buffer" layers on Cu(In,Ga)Se2 (CIGS) thin films. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) data demonstrate that films produced with the surfactant have about the same levels of impurities as films grown without it. For thin, ~130 ..ANG.. CdS layers and relative to devices made without the surfactant, average absolute cell efficiencies were increased from 10.5% to 14.8%, or by a relative 41%. Visual inspection of the CdS depositions reveals one possible mechanism of the surfactant's effects: bubbles that form and adhere to the CIGS surface during the CBD reaction are almost completely eliminated with the addition of the TX-100. Thus, pinholes and thin areas in the CdS layers caused by poor wetting of the substrate surface are sharply reduced, leading to large increases in the open circuit voltage in devices produced with the surfactant.

Perkins, C. L.; Hasoon, F. S.

2005-11-01T23:59:59.000Z

84

Surfactant-Assisted Growth of CdS Thin Films for Photovoltaic Applications  

DOE Green Energy (OSTI)

A common non-ionic surfactant, Triton X-100, was used to modify the chemical bath deposition (CBD) of CdS "buffer" layers on Cu(In,Ga)Se2 (CIGS) thin films. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) data demonstrate that films produced with the surfactant have about the same levels of impurities as films grown without it. For thin, ~130 ..ANG.. CdS layers and relative to devices made without the surfactant, average absolute cell efficiencies were increased from 10.5% to 14.8%, or by a relative 41%. Visual inspection of the CdS depositions reveals one possible mechanism of the surfactant's effects: bubbles that form and adhere to the CIGS surface during the CBD reaction are almost completely eliminated with the addition of the TX-100. Thus, pinholes and thin areas in the CdS layers caused by poor wetting of the substrate surface are sharply reduced, leading to large increases in the open circuit voltage in devices produced with the surfactant.

Perkins, C. L.; Hasoon, F. S.

2005-11-01T23:59:59.000Z

85

High-throughput manufacturing of thin-film CdS/CdTe photovoltaic modules. Annual subcontract report, 16 November 1994--15 November 1995  

DOE Green Energy (OSTI)

The objectives of this subcontract are to advance Solar Cells, Inc.`s (SCI`s) photovoltaic manufacturing technologies, reduce module production costs, increase module performance, and provide the groundwork for SCI to expand its commercial production capacities. Activities during the second year of the program concentrated on process development, equipment design and testing, quality assurance, and ES and H programs. These efforts broadly addressed the issues of the manufacturing process for producing thin-film monolithic CdS/CdTe photovoltaic modules.

Sandwisch, D.W. [Solar Cells, Inc., Toledo, OH (United States)

1997-02-01T23:59:59.000Z

86

Nanostructured columnar heterostructures of TiO2 and Cu2O enabled by a thin-film self-assembly approach: Potential for photovoltaics  

Science Conference Proceedings (OSTI)

Significant efforts are being devoted to the development of semiconductor thin film and nanostructured material architectures as components of solar energy harvesting and conversion devices. In particular, nanostructured assemblies with well-defined geometrical shapes have emerged as possible highly efficient and economically viable alternatives to planar junction thin film architectures , , , . However, fabrication of inorganic nanostructures generally requires complicated and multiple step processing techniques, making them less suitable for large-scale manufacturing. Hence, innovative cell architectures and materials processing schemes are essential to large-scale integration and practical viability in photovoltaic devices. Here we present here a new approach towards nanostructured thin film solar cells, by exploiting phase-separated self-assembly , . Through a single-step deposition by rf magnetron sputtering, we demonstrate growth of an epitaxial, composite film matrix formed as self-assembled, well ordered, phase segregated, and oriented p-n type interfacial nanopillars of Cu2O and TiO2. The composite films were structurally characterized to atomic resolution by a variety of analytical tools, and evaluated for preliminary optical properties using absorption measurements. We find nearly atomically distinct Cu2O-TiO2 interfaces (i.e. a p-n junction), and an absorption profile that captures a wide range of the solar spectrum extending from ultraviolet to visible wavelengths. This work opens a novel avenue for development of simple and cost-effective optically active thin film architectures, and offers promise for significantly increased photovoltaic device efficiencies using nanostructured cells that can be optimized for both incident light absorption and carrier collection.

Polat, Ozgur [ORNL; Aytug, Tolga [ORNL; Lupini, Andrew R [ORNL; Paranthaman, Mariappan Parans [ORNL; Ertugrul, Memhet [Ataturk University; Bogorin, Daniela Florentina [ORNL; Meyer III, Harry M [ORNL; Wang, Wei [ORNL; Pennycook, Stephen J [ORNL; Christen, David K [ORNL

2013-01-01T23:59:59.000Z

87

Thin-film photovoltaic partnership -- Apollo{reg{underscore}sign} thin film process development: Phase 1 Technical Report, May 1998--April 1999  

DOE Green Energy (OSTI)

The objective of this Phase 1 subcontract was to establish an efficient production plating system capable of depositing thin-film CdTe and CdS on substrates up to 0.55 m{sup 2}. This baseline would then be used to build on and extend deposition areas to 0.94 m{sup 2} in the next two phases. The following achievements have been demonstrated: {sm{underscore}bullet} Chemical-bath deposition of CdS and electrochemical deposition of CdTe was demonstrated on 0.55 m{sup 2} substrates. The films were characterized using optical and electrical techniques, to increase the understanding of the materials and aid in loss analysis. {sm{underscore}bullet} A stand-alone, prototype CdTe reaction tank was built and commissioned, allowing the BP Solar team to perform full-scale trials as part of this subcontract. {sm{underscore}bullet} BP Solar installed two outdoor systems for reliability and performance testing. {sm{underscore}bullet} The 2-kW, ground-mounted, grid-connected system contains seventy-two 0.43-m{sup 2} Apollo{reg{underscore}sign} module interconnects. {sm{underscore}bullet} Two modules have been supplied to NREL for evaluation on their Performance and Energy Rating Test bed (PERT) for kWh evaluation. {sm{underscore}bullet} BP Solar further characterized the process waste stream with the aim to close-loop the system. Currently, various pieces of equipment are being investigated for suitability of particle and total organic compound removal.

Cunningham, D.W.; Skinner, D.E.

1999-10-26T23:59:59.000Z

88

Final Technical Progress Report: High-Efficiency Low-Cost Thin-Film GaAs Photovoltaic Module Development Program; July 14, 2010 - January 13, 2012  

DOE Green Energy (OSTI)

This is the final technical progress report of the High-Efficiency Low-Cost Thin-Film GaAs Photovoltaic Module Development Program. Alta Devices has successfully completed all milestones and deliverables established as part of the NREL PV incubator program. During the 18 months of this program, Alta has proven all key processes required to commercialize its solar module product. The incubator focus was on back end process steps directed at conversion of Alta's high quality solar film into high efficiency 1-sun PV modules. This report describes all program deliverables and the work behind each accomplishment.

Mattos, L.

2012-03-01T23:59:59.000Z

89

Process Development for CIGS-Based Thin-Film Photovoltaic Modules; Phase I Technical Report, 5 February 1998--4 February 1999  

DOE Green Energy (OSTI)

This report describes work performed by Global Solar Energy (GSE) under Phase I of this subcontract. GSE has initiated an extensive and systematic plan to accelerate the commercialization of thin-film photovoltaics (PV) on copper indium gallium diselenide (CIGS). GSE is developing the technology to deposit and monolithically integrate CIGS photovoltaics on a flexible substrate. CIGS-deposited on flexible substrates can be fabricated into either flexible or rigid modules. Low-cost, rigid PV panels for remote power, bulk/utility, telecommunications, and rooftop applications will be produced by affixing the flexible CIGS to an expensive rigid panel by lamination or adhesive. In the GSE approach, long (up to 700 m) continuous rolls of substrate are processed, as opposed to individual small glass plates. In combination with roll-to-roll processing, GSE is developing evaporation deposition operations that enable low-cost and high-efficiency CIGS modules. Efforts are under way to transition the CIGS deposition process into manufacturing at GSE. CIGS process development is focused on synchronizing the operation of the effusion sources, the Se delivery profile, substrate temperature, and a host of other parameters. GSE has selected an interconnect scheme and procured, installed, and tested the equipment necessary to implement the cell interconnection for thin-film CIGS modules on a polyimide substrate.

Britt, J., Wiedeman, S.; Wendt, R.; Albright, S.

1999-09-13T23:59:59.000Z

90

NREL: Photovoltaics Research - Webmaster  

NLE Websites -- All DOE Office Websites (Extended Search)

Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials, Devices, & Processes Testing & Analysis Facilities National Center for Photovoltaics...

91

Thin film photovoltaic cells  

DOE Patents (OSTI)

A solar cell has as its transparent electrical contact a grid made from a non-noble metal by providing a layer of copper oxide between the transparent electrical contact and the absorber-generator.

Rothwarf, Allen (Philadelphia, PA)

1981-01-01T23:59:59.000Z

92

Heteroepitaxial Si Thin Films Deposited on Flexible Copper ...  

Science Conference Proceedings (OSTI)

Presentation Title, Heteroepitaxial Si Thin Films Deposited on Flexible Copper Substrates for Solar Photovoltaics. Author(s), Daniela Florentina Bogorin, Lee ...

93

Pioneering NREL research has been instrumental in developing cadmium telluride (CdTe) and other thin-film photovoltaic (PV) technologies to the point where they are poised to take off  

E-Print Network (OSTI)

offset the cost of additional manufacturing capacity. In addition, NREL's new Science and Technology near-term manufacturing, building the knowledge and technology base for future manufacturing on. PIX 16735 Thin-Film Manufacturing Process Gives Edge to Photovoltaic Start-Up Abound Solar

94

Thin-film cadmium telluride photovoltaic cells. Final subcontract report, 1 November 1992--1 January 1994  

DOE Green Energy (OSTI)

This report describes work to develop and optimize radio-frequency (rf) sputtering for the deposition of thin films of cadmium telluride (CdTe) and related semiconductors for thin-film solar cells. Pulsed laser physical vapor deposition was also used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. The sputtering work utilized a 2-in diameter planar magnetron sputter gun. The film growth rate by rf sputtering was studied as a function of substrate temperature, gas pressure, and rf power. Complete solar cells were fabricated on tin-oxide-coated soda-lime glass substrates. Currently, work is being done to improve the open-circuit voltage by varying the CdTe-based absorber layer, and to improve the short-circuit current by modifying the CdS window layer.

Compaan, A.D.; Bohn, R.G. [Toledo Univ., OH (United States)

1994-09-01T23:59:59.000Z

95

Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species  

DOE Patents (OSTI)

A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species ("CZTCh" or "CZTSS") with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens.

Teeter, Glenn; Du, Hui; Young, Matthew

2013-08-06T23:59:59.000Z

96

Applications of Passive Thin Films  

DOE Green Energy (OSTI)

The physical properties of thin films affect the performance and durability of nearly every solar energy conversion device. Familiar examples of thin films for solar applications are optical materials and protective coatings. Optimized optical properties are key to cost-effective photothermal conversion where individual components must have high absorptance, reflectance, or transmittance. The protection of sensitive substrates from corrosion and/or erosion is essential to ensure adequate component and system lifetime. Such substrates range from photovoltaic materials operating near room temperature to turbine blade structural alloys in hostile environments at very high temperatures (>1,000 degrees C). Although much has been written on particular categories of thin-film materials for solar energy (for example, absorbers for receiver surfaces), to date no one has provided an overview of the spectrum of applications for passive thin films in solar energy. This work is such an overview and also reviews the material state of the art as described in the current literature. Active thin film devices such as photovoltaics and thermoeleetrics are not discussed.

Call, P. J.

1979-05-01T23:59:59.000Z

97

Characterization of 3D Photovoltaics  

Science Conference Proceedings (OSTI)

... supporting improved processing and design of Second Generation (thin film) and Third Generation (nanostructured) photovoltaic devices. ...

2012-10-02T23:59:59.000Z

98

Photovoltaic Manufacturing Cost and Throughput Improvements for Thin-Film CIGS-Based Modules; Phase II Annual Subcontract Technical Report, July 1999 - August 2000  

DOE Green Energy (OSTI)

Thin-film photovoltaics (PV) has expanded dramatically in the last five years, but commercial use remains limited by performance, cost, and reliability. Of all the thin-film systems, copper indium gallium diselenide (CIGS) has demonstrated the greatest potential for achieving high performance at a low cost. The highest-quality CIGS has been formed by multi-source co-evaporation, a technique pioneered in this country by researchers at NREL. Multi-source co-evaporation is also potentially the fastest and most cost-effective method of CIGS absorber deposition. Global Solar Energy (GSE) has adapted multi-source co-evaporation of CIGS to large-area, roll-to-roll processing on flexible substrates, enabling several manufacturing and product capability advantages. Roll-to-roll processing enables a low-cost, automated continuous manufacturing process. Flexible substrates enable product application in unique, as well as traditional, areas. The primary objectives of the GSE Photovoltaic Manufacturing Technology (PVMaT) subcontract are to reduce cost and expand the production rate of thin-film CIGS-based PV modules on flexible substrates. Improvements will be implemented in monolithic integration, CIGS deposition, contact deposition, and in-situ CIGS control and monitoring. Specific goals of the three-year contract are: - Monolithic Integration - Increase integration speed by developing high-speed, all-laser scribing processes that are more than 100% faster than the baseline process and offer clean, selective scribing; increase capacity and substantially reduce module area losses by insulating materials with high accuracy into laser scribes. - Absorber Deposition - Increase absorber-layer deposition rate by 75% in the large-area, continuous GSE process, increasing throughput and reducing labor and capital costs. Integrate a parallel detector spectroscopic ellipsometer (PDSE) with mathematical algorithms for in-situ control of the CIGS absorber, enabling runs of over 300 meters of moving substrate, while ensuring uniform properties; enhance health and safety by reducing selenium waste generation through modifications to the reactor and Se delivery method. - Back Contact Deposition - Reduce back-contact cost and increase operation yield by using improved back-contact materials.

Wendt, T.G.; Wiedeman, S. (Global Solar Energy, L.L.C.)

2001-03-12T23:59:59.000Z

99

Electrochemical photovoltaic cells CdSe thin film electrodes. Quarterly progress report No. 1, June-August 1979  

DOE Green Energy (OSTI)

The overall objective of this program is to obtain AM1 efficiencies in the range of 10% with electrochemical cells utilizing thin film electrodes. The system currently being investigated is the CdSe/aqueous sulfide-polysulfide system. This report presents the results to date of the initial CdSe deposition parameter study. The key finding has been that the ratio of Se and Cd in the as deposited film has marked effect on the film's chemical, microstructural, optical, and electrical properties as well as I-V performance. In addition, it has been found that electrolyte concentration and compostion can have a strong effect on the I-V performance of a given electrode.

Russak, M.A.; Creter, C.

1979-09-01T23:59:59.000Z

100

Solar Control Thin Films Laboratory  

NLE Websites -- All DOE Office Websites (Extended Search)

Sputtering equipment Solar Control Thin Films Laboratory The Solar Control Thin Films lab develops novel thin film coatings, deposition technologies, and device systems for...

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

High-Efficiency Thin-Film Cadmium Telluride Photovoltaic Cells; Final Subcontract Report, Final Technical Report, 21 January 1994-31 March 1998  

DOE Green Energy (OSTI)

This report describes work performed during the past year by The University of Toledo photovoltaics group. Researchers continued to develop rf sputtering for CdS/CdTe thin-film solar cells and to optimize the post-deposition process steps to match the characteristics of the sputtering process. During the fourth phase of the present contract, we focused on determining factors that limit the efficiency in our ''all-sputtered'' thin-film CdTe solar cells on soda-lime glass. These issues include controlling CdS/CdTe interdiffusion, understanding the properties of the CdS{sub x}Te{sub 1-x} alloy, optimizing process conditions for CdCl{sub 2} treatments, manipulating the influence of ion bombardment during rf sputtering, and understanding the role of copper in quenching photoluminescence and carrier lifetimes in CdTe. To better understand the important CdS/CdTe interdiffusion process, we have continued our collaboration with the University at Buffalo and Brookhaven National Synchrotron Light Source in measurements using grazing-incidence X-rays. Interdiffusion results in the formation of the ternary alloy material CdS{sub x}Te{sub 1-x} at or near the heterojunction, where its properties are critical to the operation of the solar cell. We have placed significant effort on characterizing this alloy, an effort begun in the last phase. A complete set of films spanning the alloy range, prepared by pulsed-laser deposition, has now been characterized by wavelength dispersive X-ray spectroscopy and optical absorption at NREL; by Raman scattering, X-ray diffraction, and electrical measurements in our lab; and by spectroscopic ellipsometry at Brooklyn College. We continued to participate in cooperative activity with the CdTe National Team. We prepared a series of depositions on borosilicate glass substrates having doped SnO{sub 2} layers coated with TiO{sub 2} (prepared by the University of South Florida and Harvard) and similar substrates having a resistive SnO{sub 2} layer on the doped tin oxide (fabricated by Golden Photon). The Golden Photon high-resistivity SnO{sub 2} structure yielded excellent cell performance.

Compaan, A. D.; Bohn, R. G.

1998-12-09T23:59:59.000Z

102

Overview and Challenges of Thin Film Solar Electric Technologies  

DOE Green Energy (OSTI)

In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

Ullal, H. S.

2008-12-01T23:59:59.000Z

103

Sustainable Retrofit of Residential Roofs Using Metal Roofing Panels, Thin-Film Photovoltaic Laminates, and PCM Heat Sink Technology  

DOE Green Energy (OSTI)

During September-October 2009, research teams representing Metal Construction Association (the largest North American trade association representing metal building manufacturers, builders, and material suppliers), CertainTeed (one of the largest U.S. manufacturers of thermal insulation and building envelope materials), Unisolar (largest U.S. producer of amorphous silicone photo-voltaic (PV) laminates), Phase Change Energy (manufacturer of bio-based PCM), and Oak Ridge National Laboratory (ORNL) installed three experimental attics utilizing different roof retrofit strategies in the ORNL campus. The main goal of this project was experimental evaluation of a newly-developed sustainable re-roofing technology utilizing amorphous silicone PV laminates integrated with metal roof and PCM heat sink. The experimental attic with PV laminate was expected to work during the winter time as a passive solar collector with PCM storing solar heat, absorbed during the day, and increasing overall attic air temperature during the night.

Kosny, Jan [ORNL; Miller, William A [ORNL; Childs, Phillip W [ORNL; Biswas, Kaushik [ORNL

2011-01-01T23:59:59.000Z

104

Photovoltaic manufacturing cost and throughput improvements for thin-film CIGS-based modules: Phase 1 technical report, July 1998--July 1999  

DOE Green Energy (OSTI)

The primary objectives of the Global Solar Energy (GSE) Photovoltaic Manufacturing Technology (PVMaT) subcontract are directed toward reducing cost and expanding the production rate of thin-film CuInGaSe{sub 2} (CIGS)-based PV modules on flexible substrates. Improvements will be implemented in monolithic integration, CIGS deposition, contact deposition, and in-situ CIGS control and monitoring. In Phase 1, GSE has successfully attacked many of the highest risk aspects of each task. All-laser, selective scribing processes for CIGS have been developed, and many end-of-contract goals for scribing speed have been exceeded in the first year. High-speed ink-jet deposition of insulating material in the scribes now appears to be a viable technique, again exceeding some end-of-contract goals in the first year. Absorber deposition of CIGS was reduced corresponding to throughput speeds of up to 24-in/min, also exceeding an end-of-contract goal. Alternate back-contact materials have been identified that show potential as candidates for replacement of higher-cost molybdenum, and a novel, real-time monitoring technique (parallel-detector spectroscopic ellipsometry) has shown remarkable sensitivity to relevant properties of the CIGS absorber layer for use as a diagnostic tool. Currently, one of the bilayers has been baselined by GSE for flexible CIGS on polymeric substrates. Resultant back-contacts meet sheet-resistance goals and exhibit much less intrinsic stress than Mo. CIGS has been deposited, and resultant devices are comparable in performance to pure Mo back-contacts. Debris in the chamber has been substantially reduced, allowing longer roll-length between system cleaning.

Wiedeman, S.; Wendt, R.G.

2000-03-01T23:59:59.000Z

105

Fabrication of stable, large-area thin-film CdTe photovoltaic modules. Final subcontract report, May 10, 1991--February 28, 1995  

SciTech Connect

During the period of this subcontract, May 1991 through February 1995, Solar Cells, Inc. has developed and demonstrated a low-cost process to fabricate stable large-area cadmium telluride based thin-film photovoltaic modules. This report summarizes the final phase of the project which is concentrated on process optimization and product life tests. One of the major post-deposition process steps, the CdCl{sub 2} heat treatment, has been experimentally replaced with alternative treatments with vapor chloride or chlorine gas. Material and device qualities associated with alternative treatments are comparable or superior to those with the conventional treatment. Extensive experiments have been conducted to optimize the back-electrode structure in order to ensure long term device stability. Numerous small-area cells and minimodules have been subjected to a variety of stress tests, including but not limited to continuous light soak under open or short circuit or with resistive load, for over 10,000 hours. Satisfactory stability has been demonstrated on 48 cm{sup 2} and 64 cm{sup 2} minimodules under accelerated tests and on 7200 cm{sup 2} large modules under normal operating conditions. The conversion efficiency has also been significantly improved during this period. The total area efficiency of 7200 cm{sup 2} module has reached 8.4%, corresponding to a 60.3W normalized output; the efficiency of 64 cm{sup 2} minimodules and 1.1 cm{sup 2} cells has reached 10.5% (aperture area) and 12.4% (total area), respectively.

Zhou, T.X. [Solar Cells, Inc., Toledo, OH (United States)

1995-06-01T23:59:59.000Z

106

ThinFilms  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Films Thin Films Manufacturing Technologies The Thin Film laboratory provides a variety of vapor deposition processes and facilities for cooperative research and development. Available capabilities include electron beam evaporation, sputter deposition, reactive deposi- tion processes, atomic layer deposition (ALD) and specialized techniques such as focused ion beam induced chemical vapor deposition. Equipment can be reconfigured for prototyping, or it can be dedicated to long-term research, development and manufacturing. Most sputter and evaporative deposition systems are capable of depositing multiple materials. Deposition capabilities and expertise * Deposition of a large variety of thin film mate- rials * Multiple sputter deposition systems - Capable of depositing four materials in a

107

Superhydrophobic Thin Film Coatings  

Exploiting its expertise with thin films and superhydrophobic materials, ORNL has developed a simple, inexpensive way to apply and reliably bond ...

108

CARS of Thin Films  

Science Conference Proceedings (OSTI)

... as a thin film diagnostic. Surface enhanced Raman scattering, SERS, has been used to probe the interfacial region of thin polymer films on metal ...

2012-10-02T23:59:59.000Z

109

Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)  

Science Conference Proceedings (OSTI)

Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

Not Available

2011-06-01T23:59:59.000Z

110

Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)  

DOE Green Energy (OSTI)

This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

Not Available

2013-06-01T23:59:59.000Z

111

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network (OSTI)

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

112

Thin film hydrogen sensor  

DOE Patents (OSTI)

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

Cheng, Yang-Tse (Rochester Hills, MI); Poli, Andrea A. (Livonia, MI); Meltser, Mark Alexander (Pittsford, NY)

1999-01-01T23:59:59.000Z

113

Session J: Thin Film Photovoltaics  

Science Conference Proceedings (OSTI)

Jun 23, 2010... Palit2; Nam Jokerst2; 1University of Wisconsin; 2Duke University .... show that the achievable energy conversion efficiency is 40% under 1 ...

114

Thin film tritium dosimetry  

DOE Patents (OSTI)

The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

Moran, Paul R. (Madison, WI)

1976-01-01T23:59:59.000Z

115

Research on polycrystalline thin-film materials, cells, and modules  

DOE Green Energy (OSTI)

The US Department of Energy (DOE) supports research activities in polycrystalline thin films through the Polycrystalline Thin-Film Program at the Solar Energy Research Institute (SERI). This program includes research and development (R D) in both copper indium diselenide and cadmium telluride thin films for photovoltaic applications. The objective of this program is to support R D of photovoltaic cells and modules that meet the DOE long-term goals of high efficiency (15%--20%), low cost ($50/m{sup 2}), and reliability (30-year life time). Research carried out in this area is receiving increased recognition due to important advances in polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules. These have become the leading thin-film materials for photovoltaics in terms of efficiency and stability. DOE has recognized this potential through a competitive initiative for the development of CuInSe{sub 2} and CdTe modules. This paper focuses on the recent progress and future directions of the Polycrystalline Thin-Film Program and the status of the subcontracted research on these promising photovoltaic materials. 26 refs., 12 figs, 1 tab.

Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

1990-11-01T23:59:59.000Z

116

Recent technological advances in thin film solar cells  

DOE Green Energy (OSTI)

High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

Ullal, H.S.; Zwelbel, K.; Surek, T.

1990-03-01T23:59:59.000Z

117

NREL: Photovoltaics Research - Emerging Technologies Engineering...  

NLE Websites -- All DOE Office Websites (Extended Search)

and the potential benefit of increasing system efficiency. Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

118

Thin Film Nanocomposites for Thermoelectric Applications  

Science Conference Proceedings (OSTI)

Presentation Title, Thin Film Nanocomposites for Thermoelectric Applications ... Abstract Scope, Thin film nanocomposites comprised of refractory metals and ...

119

High throughput manufacturing of thin-film CdTe photovoltaic modules. Annual subcontract report, 16 November 1993--15 November 1994  

DOE Green Energy (OSTI)

This report describes work performed by Solar Cells, Inc. (SCI), under a 3-year subcontract to advance SCI`s PV manufacturing technologies, reduce module production costs, increase module performance, and provide the groundwork for SCI to expand its commercial production capacities. SCI will meet these objectives in three phases by designing, debugging, and operating a 20-MW/year, automated, continuous PV manufacturing line that produces 60-cm {times} 120-cm thin-film CdTe PV modules. This report describes tasks completed under Phase 1 of the US Department of Energy`s PV Manufacturing Technology program.

Sandwisch, D.W. [Solar Cells, Inc., Toledo, OH (United States)

1995-11-01T23:59:59.000Z

120

Surface Treatment of CuInGaSe2 Thin Films and Its Effect on the Photovoltaic Properties of Solar Cells: Preprint  

DOE Green Energy (OSTI)

Solar cells have been fabricated with partial electrolyte treatments of CuInGaSe2 (CIGS) thin-film absorbers in lieu of a CdS layer. Treatment of the absorbers in a containing Cd or Zn solution is shown to produce conditions under which efficient solar cells can be fabricated. A similar effect is also observed in CuInGaSSe2 (CIGSS) graded-bandgap absorbers. These observations can be explained by the ability of Cd and Zn to produce n-type doping or inversion in the surface region. We also provide a brief review of similar work done elsewhere and identify directions for future investigations.

Ramanathan, K.; Hasoon, F.S.; Smith, S.; Young, D.L.; Contreras, M.A.; Johnson, P.K.; Pudov, A.O.; Sites, J.R.

2002-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

NMR characterization of thin films  

SciTech Connect

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

Gerald, II, Rex E. (Brookfield, IL); Klingler, Robert J. (Glenview, IL); Rathke, Jerome W. (Homer Glen, IL); Diaz, Rocio (Chicago, IL); Vukovic, Lela (Westchester, IL)

2008-11-25T23:59:59.000Z

122

Fundamental Materials Research and Advanced Process Development for Thin-Film CIS-Based Photovoltaics: Final Technical Report, 2 October 2001 - 30 September 2005  

DOE Green Energy (OSTI)

The objectives for this thin-film copper-indium-diselenide (CIS) solar cell project cover the following areas: Develop and characterize buffer layers for CIS-based solar cell; grow and characterize chemical-bath deposition of Znx Cd1-xS buffer layers grown on CIGS absorbers; study effects of buffer-layer processing on CIGS thin films characterized by the dual-beam optical modulation technique; grow epitaxial CuInSe2 at high temperature; study the defect structure of CGS by photoluminescence spectroscopy; investigate deep-level defects in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy; conduct thermodynamic modeling of the isothermal 500 C section of the Cu-In-Se system using a defect model; form alpha-CuInSe2 by rapid thermal processing of a stacked binary compound bilayer; investigate pulsed non-melt laser annealing on the film properties and performance of Cu(In,Ga)Se2 solar cells; and conduct device modeling and simulation of CIGS solar cells.

Anderson, T. J.; Li, S. S.; Crisalle, O. D.; Craciun, V.

2006-09-01T23:59:59.000Z

123

Thin-film optical initiator  

DOE Patents (OSTI)

A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

Erickson, Kenneth L. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

124

Thin film superconductor magnetic bearings  

DOE Patents (OSTI)

A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

Weinberger, Bernard R. (Avon, CT)

1995-12-26T23:59:59.000Z

125

Polycrystalline thin films FY 1992 project report  

DOE Green Energy (OSTI)

This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting next-generation'' options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called government/industry partnerships'') that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

Zweibel, K. (ed.)

1993-01-01T23:59:59.000Z

126

Polycrystalline thin films FY 1992 project report  

DOE Green Energy (OSTI)

This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

Zweibel, K. [ed.

1993-01-01T23:59:59.000Z

127

Amorphous Silicon(a-Si: H) Thin Film Based Omnidirectional Control Solar Powered Vehicle  

Science Conference Proceedings (OSTI)

Through the paper, our goal is to drive a car with the help of thin film based solar cell. Mechanical and Electrical parts are assembled thereby. The main objective of this project is to collect maximum solar energy from the solar spectrum and use that ... Keywords: Thin film Photovoltaic, Single p-i-n Junction, Steering Mechanism, H-Bridge, Gear motor

Abdullah Moinuddin; Md. Jahidul Hoque; Jony C. Sarker; Akhter Zia

2012-03-01T23:59:59.000Z

128

Polycrystalline thin-film solar cells and modules  

DOE Green Energy (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

129

Polycrystalline thin-film solar cells and modules  

DOE Green Energy (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

130

Research on amorphous-silicon-based thin-film photovoltaic devices: Semiannual subcontract report, 1 July 1987--31 December 1987  

DOE Green Energy (OSTI)

The objective of this work is to develop 13% (aperture area) efficient, 850-cm/sup 2/ four-terminal hybrid tandem submodules. The module design consists of a copper-indium-diselenide (CIS)-based bottom circuit and a semitransparent, thin-film silicon-hydrogen (TFS)-based top circuit. High-performance, semitransparent TFS devices and submodules were fabricated in which ZnO was used in the front and rear transparent conductors. High-performance CIS devices and submodules were also fabricated; however, the location and nature of the junction are not yet understood. Representative four-terminal hybrid tandem devices and submodules were fabricated from TFS and CIS component circuits. Optical coupling between the circuits was lower than expected, because of reflection losses at key interfaces. Efficiencies obtained for these devices and modules include 14.17% for a four-terminal, 4-cm/sup 2/ tandem cell and 12.3% for a four-terminal, tandem module. 7 refs., 90 figs.

Bottenberg, W.; Mitchell, K.; Wieting, R.

1988-05-01T23:59:59.000Z

131

Density Profiles in Sputtered Molybdenum Thin Films and Their Effects on Sodium Diffusion in Cu(InxGa1-x)Se2 Photovoltaics: Preprint  

DOE Green Energy (OSTI)

Molybdenum (Mo) thin films were sputtered onto soda lime glass (SLG) substrates. The main variable in the deposition parameters, the argon (Ar) pressure pAr, was varied in the range of 6 - 20 mTorr. Ex situ spectroscopic ellipsometry (SE) was performed to find out that the dielectric functions of the Mo films were strongly dependent on pAr, indicating a consistent and significant decrease in the Mo film density pMo with increasing pAr. This trend was confirmed by high-angle-annular-dark-field scanning transmission electron microscopy. Dielectric functions of Mo were then found to be correlated with secondary ion mass spectroscopy profiles of Sodium (Na) in the Cu(InxGa1-x)Se2 (CIGS) layer grown on top of Mo/SLG. Therefore, in situ optical diagnostics can be applied for process monitoring and optimization in the deposition of Mo for CIGS solar cells. Such capability is demonstrated with simulated optical transmission and reflectance of variously polarized incident light, using dielectric functions deduced from SE.

Li, J.; Glynn, S.; Mansfield, L.; Young, M.; Yan, Y.; Contreras, M.; Noufi, R.; Levi, D.; Terry Jr., F. L.

2011-07-01T23:59:59.000Z

132

Thin Films and Interfaces Committee  

Science Conference Proceedings (OSTI)

The Thin Films and Interfaces Committee is part of the Electronic, Magnetic, and Photonic Materials Division;. Our Mission: Promotes knowledge of the science ...

133

Rational Design and Preparation of Organic Semiconductors for use in Field Effect Transistors and Photovoltaic Cells  

E-Print Network (OSTI)

in thin film organic photovoltaic cells (OPVs) is presented.Effect Transistors and Photovoltaic Cells By Clayton EdwardEffect Transistors and Photovoltaic Cells By Clayton Edward

Mauldin, Clayton Edward

2010-01-01T23:59:59.000Z

134

Nanopillar Photovoltaics: Photon Management and Junction Engineering for Next-Generation Solar Cells  

E-Print Network (OSTI)

for efficient photovoltaic cells, Nat. Nanotechnol. 6, 568-for efficient photovoltaic cells, Nat. Nanotechnol. 6, 568-trapping in thin-film photovoltaic cells, Opt. Express 8,

Mariani, Giacomo

2013-01-01T23:59:59.000Z

135

Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)  

DOE Green Energy (OSTI)

Capabilities fact sheet for the National Center for Photovoltaics: Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide that includes scope, core competencies and capabilities, and contact/web information.

Not Available

2011-06-01T23:59:59.000Z

136

Thin film hydrogen sensor  

DOE Green Energy (OSTI)

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

Lauf, Robert J. (Oak Ridge, TN); Hoffheins, Barbara S. (Knoxville, TN); Fleming, Pamela H. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

137

Synthesis of thin films and materials utilizing a gaseous catalyst  

Science Conference Proceedings (OSTI)

A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

2013-10-29T23:59:59.000Z

138

Thin film ion conducting coating  

DOE Patents (OSTI)

Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

Goldner, Ronald B. (Lexington, MA); Haas, Terry (Sudbury, MA); Wong, Kwok-Keung (Watertown, MA); Seward, George (Arlington, MA)

1989-01-01T23:59:59.000Z

139

Vertically Aligned Nanocomposite Thin Films  

E-Print Network (OSTI)

Vertically aligned nanocomposite (VAN) thin films have recently stimulated significant research interest to achieve better material functionality or multifunctionalities. In VAN thin films, both phases grow epitaxially in parallel on given substrates and form a unique nano-checkerboard structure. Multiple strains, including the vertical strain which along the vertical interface and the substrate induced strain which along the film and substrate interface, exist in VAN thin films. The competition of these strains gives a promise to tune the material lattice structure and future more the nanocomposite film physical properties. Those two phases in the VAN thin films are selected based on their growth kinetics, thermodynamic stability and epitaxial growth ability on given substrates. In the present work, we investigated unique epitaxial two-phase VAN (BiFeO3)x:(Sm2O3)1-x and (La0.7Sr0.3MnO3)x:(Mn3O4)1-x thin film systems by pulsed laser deposition. These VAN thin films exhibit a highly ordered vertical columnar structure with good epitaxial quality. The strain of the two phases can be tuned by deposition parameters, e.g. deposition frequency and film composition. Their strain tunability is found to be related directly to the systematic variation of the column widths and domain structures. Their physical properties, such as dielectric loss and ferromagnetisms can be tuned systematically by this variation. The growth morphology, microstructure and material functionalities of VAN thin films can be varied by modifying the phase ratio, substrate orientation or deposition conditions. Systematic study has been done on growing (SrTiO3)0.5:(MgO)0.5 VAN thin films on SrTiO3 and MgO substrates, respectively. The variation of column width demonstrates the substrate induced strain plays another important role in the VAN thin film growth. The VAN thin films also hold promise in achieving porous thin films with ordered nanopores by thermal treatment. We selected (BiFeO3)0.5:(Sm2O3)0.5 VAN thin films as a template and get uniformly distributed bi-layered nanopores. Controllable porosity can be achieved by adjusting the microstructure of VAN (BiFeO3):(Sm2O3) thin films and the annealing parameters. In situ heating experiments within a transmission electron microscope column provide direct observations into the phases transformation, evaporation and structure reconstruction during the annealing. Systematic study in this dissertation demonstrate that the vertically aligned nanocomposite microstructure is a brand new architecture in thin films and an exciting approach that promises tunable material functionalities as well as novel nanostructures.

Bi, Zhenxing

2011-05-01T23:59:59.000Z

140

NIST Hydrogen Storage in Thin Films  

Science Conference Proceedings (OSTI)

Hydrogen Storage Optimization in Thin Film Combinatorial Alloys. ... Magnesium Thin Films," International Journal of Hydrogen Energy, doi:10.1016/j ...

2013-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Thin Film and Nanostructure Processing Group Homepage  

Science Conference Proceedings (OSTI)

... The Thin Film and Nanostructure Processing Group is one of seven ... Deposition of thin films Electrodeposition of metals and alloys Evaporation of ...

2012-10-15T23:59:59.000Z

142

Metals Thin-Films Information at NIST  

Science Conference Proceedings (OSTI)

NIST Home > Metals Thin-Films Information at NIST. Metals Thin-Films Information at NIST. (the links below are a compilation ...

2010-05-24T23:59:59.000Z

143

Optical Characterization of Advanced Thin Films  

Science Conference Proceedings (OSTI)

... Recently, thin films of spun-cast poly(2,5-bis(3-alkylthiophen ... been demonstrated to exhibit exceptional hole mobilities in thin film transistors (TFTs ...

2012-10-02T23:59:59.000Z

144

Thin Film Solar Technologies | Open Energy Information  

Open Energy Info (EERE)

Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon Thin Film Solar Technologies Jump to: navigation, search Name Thin Film Solar Technologies...

145

Interfaces in Nanostructured Functional Oxide Thin Films  

Science Conference Proceedings (OSTI)

The thin film systems include high temperature superconductors (HTS), thin film solid oxide fuel cells (SOFC), and other functional oxide systems. Detailed ...

146

SunShot Initiative: Multijunction III-V Photovoltaics Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Multijunction III-V Photovoltaics Research on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions...

147

CFN | Thin Films Group  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Synthesis and Characterization Facility Materials Synthesis and Characterization Facility Thin-Film Processing Facility Online Manager (FOM) website FOM manual ESR for lab 1L32 (High-Resolution SEM and x-ray microanalysis) CFN Operations Safety Awareness (COSA) form for 1L32 (ESR #1) Technical article on LABE detector (Analytical SEM) Request form for off-hours access (.doc, First time only, renewals done via email) Lab Tool capabilities Primary contact Training schedule Backup contact Booking calendar Booking rules SOP 1L32 Analytical SEM Camino Thurs 10-12 PM Stein FOM yes yes Hitachi S-4800 SEM Stein Tues 1-3 PM Black FOM no yes booking calendar: yes = need to reserve tool time in calendar before using tool booking rules: yes = specific rules exist for reserving tool time SOP = standard operating procedure (basic instructions)

148

Thin Film and nanostructure Processing Staff  

Science Conference Proceedings (OSTI)

Thin Film Nanostructure Staff Directory. John Bonevich, Group Leader. Shari Beauchamp, Office Assistant. STAFF & NRC POSTDOCS. ...

2013-06-11T23:59:59.000Z

149

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Program Manager, Solar Program Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be using technology pioneered at the Department of Energy's National Renewable Energy Lab (NREL). The record-breaking Cadmium-Telluride (CdTe) thin film photovoltaic technology GE has chosen for its solar panels was originally developed more than a decade ago by a team of scientists led by NREL's Xuanzhi Wu, and

150

Status of High Performance PV: Polycrystalline Thin-Film Tandems  

DOE Green Energy (OSTI)

The High-Performance Photovoltaic (HiPerf PV) Project was initiated by the U.S. Department of Energy to substantially increase the viability of photovoltaics (PV) for cost-competitive applications so that PV can contribute significantly to our energy supply and our environment. The HiPerf PV Project aims at exploring the ultimate performance limits of existing PV technologies, approximately doubling their sunlight-to-electricity conversion efficiencies during its course. This work includes bringing thin-film cells and modules toward 25% and 20% efficiencies, respectively, and developing multijunction concentrator cells and modules able to convert more than one-third of the sun's energy to electricity (i.e., 33% efficiency). This paper will address recent accomplishments of the NREL in-house research effort involving polycrystalline thin-film tandems, as well as the research efforts under way in the subcontracted area.

Symko-Davies, M.

2005-02-01T23:59:59.000Z

151

Polycrystalline thin-film module and system performance  

DOE Green Energy (OSTI)

The Module and System Performance and Engineering Project at the National Renewable Energy Laboratory (NREL) conducts in-situ technical evaluations of photovoltaic (PV) modules and systems (arrays). These evaluations on module/array performance and stability are conducted at the NREL Photovoltaic Outdoor Test Facility (OTF) in Golden, CO. The modules and arrays are located at 39.7{degree}N latitude, 105.2{degree}W longitude, and at 1,782 meters elevation. Currently, two polycrystalline thin-film technologies are the focus of the research presented here. The module structures are copper indium diselenide (CIS) from Siemens Solar Industries and cadmium telluride (CdTe) from Solar Cells, Inc. The research team is attempting to correlate individual module performance with array performance for these two polycrystalline thin-film technologies. This is done by looking at module and array performance over time. Also, temperature coefficients are determined at both the module and array level. Results are discussed.

Strand, T.; Kroposki, B.; Hansen, R.; Mrig, L.

1995-11-01T23:59:59.000Z

152

Thin-film Lithium Batteries  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin-Film Battery with Lithium Anode Courtesy of Oak Ridge National Laboratory, Materials Science and Technology Division Thin-Film Lithium Batteries Resources with Additional Information The Department of Energy's 'Oak Ridge National Laboratory (ORNL) has developed high-performance thin-film lithium batteries for a variety of technological applications. These batteries have high energy densities, can be recharged thousands of times, and are only 10 microns thick. They can be made in essentially any size and shape. Recently, Teledyne licensed this technology from ORNL to make batteries for medical devices including electrocardiographs. In addition, new "textured" cathodes have been developed which have greatly increased the peak current capability of the batteries. This greatly expands the potential medical uses of the batteries, including transdermal applications for heart regulation.'

153

Nanostructured Photovoltaics: - Home - Energy Innovation Portal  

Atomic Layer Deposition Thin Film Technology ... Photovoltaic manufacturing is an emerging industry that promises a carbon-free, nearly limitless source of energy ...

154

Thin film-coated polymer webs  

DOE Patents (OSTI)

The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

Wenz, Robert P. (Cottage Grove, MN); Weber, Michael F. (Shoreview, MN); Arudi, Ravindra L. (Woodbury, MN)

1992-02-04T23:59:59.000Z

155

Thin Film Deposition Method for Sensor Manufacturing  

Scientists at Los Alamos National Laboratory (LANL) have developed an innovative method for gas sensor manufacturing using a thin film deposition. The thin film requires very little material and can be applied in high throughput applications.

156

Magnetoelectric Multiferroic Thin Films and Multilayers  

Science Conference Proceedings (OSTI)

Scope, The symposium will cover thin films, single crystals, normal/relaxor ferroelectrics, piezoelectric ceramics, magnetoelectric composites, multiferroic ...

157

Magnetic behaviour of europium epitaxial thin films  

Science Conference Proceedings (OSTI)

... Magnetic behaviour of europium epitaxial thin films. Philippe Mangin, University of Nancy and NCNR. We present the magnetic ...

158

MST: Organizations: Thin Film, Vacuum, and Packaging  

NLE Websites -- All DOE Office Websites (Extended Search)

Processes & Services Electronic Fabrication Manufacturing Process Science & Technology Thin Film, Vacuum, & Packaging Organic Materials Ceramic & Glass Meso Manufacturing &...

159

Sputtered Thin Film Photovoltaics - Energy Innovation Portal  

Biomass and Biofuels; Building Energy Efficiency; Electricity Transmission; ... A sputtering target formed by the method can have an oxygen content of 10 ppm by ...

160

Thin-Film Reliability Trends Toward Improved Stability  

Science Conference Proceedings (OSTI)

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (R{sub d}) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2 {+-} 0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Organic thin film prehistory: looking towards solution phase aggregation |  

NLE Websites -- All DOE Office Websites (Extended Search)

Organic thin film prehistory: looking towards solution phase aggregation Organic thin film prehistory: looking towards solution phase aggregation Wednesday, November 6, 2013 - 3:00pm SLAC, Redtail Hawk Conference Room 108A Christopher Tassone, SSRL Polymer bulk heterojunction (BHJ) solar cells have attracted significant attention in industry and academia because of their potential for achieving large-area, light-weight, and flexible photovoltaic devices through cost-effective solution deposition techniques. These devices consist of a blend of an absorbing polymer and an electron accepting fullerene, the molecular packing and phase segregation of which heavily influence power conversion efficiency by effecting important processes such as exciton splitting, charge transport, and recombination. Understanding and utilization of molecular interactions to predicatively control the

162

Thin-Film Reliability Trends Toward Improved Stability: Preprint  

DOE Green Energy (OSTI)

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (Rd) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2+/-0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-07-01T23:59:59.000Z

163

Magnetron-sputter deposition of Fe{sub 3}S{sub 4} thin films and their conversion into pyrite (FeS{sub 2}) by thermal sulfurization for photovoltaic applications  

SciTech Connect

The authors report on the fabrication of FeS{sub 2} (pyrite) thin films by sulfurizing Fe{sub 3}S{sub 4} that were deposited by direct current magnetron sputtering at room temperature. Under the selected sputtering conditions, Fe{sub 3}S{sub 4} nanocrystal films are obtained and the nanocrystals tend to locally cluster and closely pack into ricelike nanoparticles with an increase in film thickness. Meanwhile, the film tends to crack when the film thickness is increased over {approx}1.3 {mu}m. The film cracking can be effectively suppressed by an introduction of a 3-nm Cu intermediate layer prior to Fe{sub 3}S{sub 4} deposition. However, an introduction of a 3-nm Al intermediate layer tends to enhance the film cracking. By post-growth thermal sulfurization of the Fe{sub 3}S{sub 4} thin films in a tube-furnace, FeS{sub 2} with high phase purity, as determined by using x ray diffraction, is obtained. Optical absorption spectroscopy was employed to characterize the resultant FeS{sub 2} thin films, which revealed two absorption edges at 0.9 and 1.2 eV, respectively. These two absorption edges are assigned to the direct bandgap (0.9 eV) and the indirect allowed transitions (1.2 eV) of FeS{sub 2}, respectively.

Liu Hongfei; Chi Dongzhi [Institute of Materials Research and Engineering (IMRE), A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)

2012-07-15T23:59:59.000Z

164

Photovoltaic  

Science Conference Proceedings (OSTI)

Oct 9, 2012 ... Columnar p-n Heterostructures Formed by a Thin-Film Self-Assembly Approach: Potential for PV Solar Cells: Tolga Aytug1; Daniela Bogorin1; ...

165

Method of producing amorphous thin films  

DOE Patents (OSTI)

Disclosed is a method of producing thin films by sintering which comprises: a. coating a substrate with a thin film of an inorganic glass forming parulate material possessing the capability of being sintered, and b. irridiating said thin film of said particulate material with a laser beam of sufficient power to cause sintering of said material below the temperature of liquidus thereof. Also disclosed is the article produced by the method claimed.

Brusasco, Raymond M. (Livermore, CA)

1992-01-01T23:59:59.000Z

166

Characterization of Micro-, Nano-, and Thin Films  

Science Conference Proceedings (OSTI)

Feb 18, 2010... CdS:In Thin Films Prepared by the Spray-Pyrolysis Technique: Shadia Ikhmayies1; Riyad Ahmad-Bitar1; 1University of Jordan

167

Method of producing amorphous thin films  

DOE Patents (OSTI)

This invention dicloses a method for sintering particulate material (such as silica) with a laser beam to produce amorphous optical thin films on substrates.

Brusasco, R.M.

1991-12-31T23:59:59.000Z

168

Infrared Analysis of Advanced Thin Film Materials  

Science Conference Proceedings (OSTI)

The goals of timely and cost effective integration of these new materials into ... most widely accepted method for production monitoring of transparent thin films.

169

Polycrystalline Thin Film Solar Cell Technologies: Preprint  

DOE Green Energy (OSTI)

Rapid progress is being made by CdTe and CIGS-based thin-film PV technologies in entering commercial markets.

Ullal, H. S.

2008-12-01T23:59:59.000Z

170

Mechanical Properties of Thin Film Metallic Glass  

Science Conference Proceedings (OSTI)

Because of these and other properties, thin film metallic-glasses (TFMGs) are a promising structural material for fabricating the next generation of micro- and ...

171

Textured Ultrafine Grained Al Thin Films  

Science Conference Proceedings (OSTI)

Symposium, Fatigue and Fracture of Thin Films and Nanomaterials. Presentation Title, In-Situ ACOM-TEM Nanomechanical Testing of Textured Ultrafine ...

172

Surface Sensitive Scattering from Thin Films  

Science Conference Proceedings (OSTI)

... Thin films of few tenths of angstroms are becoming the staple of the electronic ... a powerful tool for the basic understanding of the film microstructure. ...

173

Thin Film Structures for Energy Efficient Systems  

Science Conference Proceedings (OSTI)

Thin film based energy generation and storage devices - Small scale ... Dye- sensitized Solar Cells with Anodized Aluminum Alloy-based Counter-electrodes.

174

p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells  

E-Print Network (OSTI)

everything accelerates. ARCO solar produces more than 1 MW PV cells in `80, being the first in the world, the Million Solar Roofs in the US, and many more. Besides these programs, the efficiency of CdTe thin film PV energy source is the photovoltaic (PV) cell, which converts sunlight to electrical current, without any

Bieber, Michael

175

Thin film buried anode battery  

DOE Patents (OSTI)

A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

Lee, Se-Hee (Lakewood, CO); Tracy, C. Edwin (Golden, CO); Liu, Ping (Denver, CO)

2009-12-15T23:59:59.000Z

176

Thin film solar energy collector  

DOE Patents (OSTI)

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

1983-11-22T23:59:59.000Z

177

Thin-film optical initiator - Energy Innovation Portal  

A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film.

178

Thin films of mixed metal compounds  

DOE Patents (OSTI)

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

1985-01-01T23:59:59.000Z

179

Institute of Photo Electronic Thin Film Devices and Technology...  

Open Energy Info (EERE)

Place Tianjin Municipality, China Zip 300071 Sector Solar Product A thin-film solar cell research institute in China. References Institute of Photo-Electronic Thin Film Devices...

180

Daylighting control performance of a thin-film ceramic electrochromic...  

NLE Websites -- All DOE Office Websites (Extended Search)

Daylighting control performance of a thin-film ceramic electrochromic window: Field study results Title Daylighting control performance of a thin-film ceramic electrochromic...

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Breakthroughs in Thin-Film Magnetic Devices Earn NIST ...  

Science Conference Proceedings (OSTI)

... thin films to control magnetism as a foundation for developing better sensors and memory devices. Computer hard drives that use magnetic thin-film ...

2012-12-13T23:59:59.000Z

182

Amorphous and nanocrystalline Mg2Si thin-film electrodes  

NLE Websites -- All DOE Office Websites (Extended Search)

Contact Us Department Contacts Media Contacts Amorphous and nanocrystalline Mg2Si thin-film electrodes Title Amorphous and nanocrystalline Mg2Si thin-film electrodes...

183

Thin-Film/Low-K Dielectric Constant Measurement  

Science Conference Proceedings (OSTI)

... to pursue a very different approach to dielectric thin-film characterization at ... at NIST; DOW will simply deposit and pattern the thin films on pretested ...

2010-10-05T23:59:59.000Z

184

Investigations of CuInSe sub 2 thin films and contacts  

DOE Green Energy (OSTI)

This report describes research into electrical contacts for copper indium diselenide (CuInSe{sub 2}) polycrystalline thin films used for solar cell applications. Molybdenum contacts have historically been the most promising for heterojunction solar cells. This program studied contact stability by investigating thermally induced bilayer reactions between molybdenum and copper, indium, and selenium. Because selenization is widely used to fabricate CuInSe{sub 2} thin films for photovoltaic cells, a second part of the program investigated how the morphologies, phases, and reactions of pre-selenization Cu-In structures are affected by the deposition process and heat treatments. 7 refs., 6 figs.

Nicolet, M.A. (California Inst. of Tech., Pasadena, CA (United States))

1991-10-01T23:59:59.000Z

185

Improved Transparent Conducting Oxides Boost Performance of Thin-Film Solar Cells (Fact Sheet)  

DOE Green Energy (OSTI)

Today?s thin-film solar cells could not function without transparent conducting oxides (TCOs). TCOs act as a window, both protecting the cell and allowing light to pass through to the cell?s active layers. Until recently, TCOs were seen as a necessary, but static, layer of a thin-film photovoltaic (PV) cell. But a group of researchers at the National Renewable Energy Laboratory (NREL) has identified a pathway to producing improved TCO films that demonstrate higher infrared transparency. To do so, they have modified the TCOs in ways that did not seem possible a few years ago.

Not Available

2011-02-01T23:59:59.000Z

186

Aging phenomena in polystyrene thin films  

E-Print Network (OSTI)

The aging behavior is investigated for thin films of atactic polystyrene through measurements of complex electric capacitance. During isothermal aging process the real part of the electric capacitance increases with aging time, while the imaginary part decreases with aging time. This result suggests that the aging time dependence of the real and imaginary parts are mainly associated with change in thickness and dielectric permittivity, respectively. In thin films, the thickness depends on thermal history of aging even above the glass transition. Memory and `rejuvenation' effects are also observed in the thin films.

Koji Fukao; Hiroki Koizumi

2008-01-05T23:59:59.000Z

187

Innovative Thin Films LLC | Open Energy Information  

Open Energy Info (EERE)

Thin Films LLC Thin Films LLC Jump to: navigation, search Name Innovative Thin Films LLC Place Toledo, Ohio Zip 43607 Product Provider of altnernative energy thin film deposition technology. Coordinates 46.440613°, -122.847838° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":46.440613,"lon":-122.847838,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

188

Solid State Thin Film Lithium Microbatteries  

E-Print Network (OSTI)

Solid state thin film lithium microbatteries fabricated by pulsed-laser deposition (PLD) are suggested. During deposition the following process parameters must be considered, which are laser energy and fluence, laser pulse ...

Shi, Z.

189

Superhydrophobic Thin Film Symposium | ornl.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

Connect with ORNL | For Industry | Partnerships | Events and Conferences Superhydrophobic Thin Film Symposium Sep 05 2012 12:00 AM - 05:00 PM Hosted by Oak Ridge Laboratory's...

190

Polycrystalline Thin-Film Multijunction Solar Cells  

DOE Green Energy (OSTI)

We present a digest of our research on the thin-film material components that comprise the top and bottom cells of three different material systems and the tandem devices constructed from them.

Noufi, R.; Wu, X.; Abu-Shama, J.; Ramanathan, K; Dhere, R.; Zhou, J.; Coutts, T.; Contreras, M.; Gessert, T.; Ward, J. S.

2005-11-01T23:59:59.000Z

191

Thin films for geothermal sensing: Final report  

DOE Green Energy (OSTI)

The report discusses progress in three components of the geothermal measurement problem: (1) developing appropriate chemically sensitive thin films; (2) discovering suitably rugged and effective encapsulation schemes; and (3) conducting high temperature, in-situ electrochemical measurements. (ACR)

Not Available

1987-09-01T23:59:59.000Z

192

Photovoltaics  

Energy.gov (U.S. Department of Energy (DOE))

Photovoltaic (PV) materials and devices convert sunlight into electrical energy, and PV cells are commonly known as solar cells. Photovoltaics can literally be translated as light-electricity.

193

Evaluation of the commercial potential of novel organic photovoltaic technologies  

E-Print Network (OSTI)

Photovoltaic cells based on organic semiconducting materials have the potential to compete with the more mature crystalline and thin film based photovoltaic technologies in the future primarily due to the expectation of ...

Barr, Jonathan (Jonathan Allan)

2005-01-01T23:59:59.000Z

194

Tunable Nanocrystalline CZTS for Solar Photovoltaics with No Required Annealing  

Thin-film solar cells are expected to replace the current first generation of solar photovoltaic technology due to their lower manufacturing cost and increased electrical output. Nanocrystal cells, one of the second generation of solar photovoltaics, ...

195

Precise Application of Transparent Conductive Oxide Coatings for Flat Panel Displays and Photovoltaic Cells  

Argonne has developed a new method for applying thin film coatings of transparent conducting oxides (TCOs) to large panel displays and photovoltaic (PV) cells.

196

NREL: Photovoltaics Research - Company Partners in Photovoltaic  

NLE Websites -- All DOE Office Websites (Extended Search)

Company Partners in Photovoltaic Manufacturing R&D Company Partners in Photovoltaic Manufacturing R&D More than 40 private-sector companies partnered with NREL on successful efforts within the PV Manufacturing R&D Project. They included manufacturers of crystalline silicon, thin-film, and concentrator solar technologies. The companies are listed below. Advanced Energy Systems Alpha Solarco ASE Americas AstroPower/GE Energy Boeing Aerospace BP Solar Cronar Crystal Systems Dow Corning Energy Conversion Devices Energy Photovoltaics ENTECH Evergreen Solar First Solar Glasstech Solar Global Photovoltaic Specialists Global Solar Energy Golden Photon Iowa Thin Film Technologies ITN Energy Systems Kopin Mobil Solar Energy Omnion Power Engineering Photon Energy Photovoltaics International PowerLight RWE Schott Solar/Schott Solar

197

Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films  

DOE Patents (OSTI)

A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

Brinker, Charles Jeffrey (Albuquerque, NM); Prakash, Sai Sivasankaran (Minneapolis, MN)

1999-01-01T23:59:59.000Z

198

Silicon Oxynitride Thin Film Barriers for PV Packaging (Poster)  

DOE Green Energy (OSTI)

Dielectric, adhesion-promoting, moisture barriers comprised of silicon oxynitride thin film materials (SiOxNy with various material stoichiometric compositions x,y) were applied to: 1) bare and pre-coated soda-lime silicate glass (coated with transparent conductive oxide SnO2:F and/or aluminum), and polymer substrates (polyethylene terephthalate, PET, or polyethylene napthalate, PEN); plus 2) pre- deposited photovoltaic (PV) cells and mini-modules consisting of amorphous silicon (a-Si) and copper indium gallium diselenide (CIGS) thin-film PV technologies. We used plasma enhanced chemical vapor deposition (PECVD) process with dilute silane, nitrogen, and nitrous oxide/oxygen gas mixtures in a low-power (< or = 10 milliW per cm2) RF discharge at ~ 0.2 Torr pressure, and low substrate temperatures < or = 100(degrees)C, over deposition areas ~ 1000 cm2. Barrier properties of the resulting PV cells and coated-glass packaging structures were studied with subsequent stressing in damp-heat exposure at 85(degrees)C/85% RH. Preliminary results on PV cells and coated glass indicate the palpable benefits of the barriers in mitigating moisture intrusion and degradation of the underlying structures using SiOxNy coatings with thicknesses in the range of 100-200 nm.

del Cueto, J. A.; Glick, S. H.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

2006-10-03T23:59:59.000Z

199

Amorphous carbon thin films for optoelectric device application  

Science Conference Proceedings (OSTI)

Thin films of amorphous carbon (a-C and a-C:H) have been deposited using different carbon precursor materials such as camphor--a natural source, graphite and CH{sub 4}/H{sub 2} mixture by different deposition methods, such as ion beam sputtering, pyrolysis, pulsed laser deposition and r.f. plasma CVD. The films are subjected to various standard characterization techniques in order to tailor the required structural and opto-electrical properties for device applications. The effects of deposition parameters and annealing temperatures on the properties of carbon thin films have been investigated. Both p- and n- type of carbon films have been obtained either through controlling the deposition parameters of a particular method or by doping. Solar cells of various configurations, such as n-C/p-Si, p-C/n-Si and n-C/p-C/p-Si, have been fabricated and their photoresponse characteristics are studied. An efficiency of 1.52% has been obtained, so far, for the cell of configuration n-C/p-C/p-Si. Effects of substrate temperature on the photovoltaic properties are also outlined in brief.

Soga, T.; Jimbo, T.; Krishna, K.M.; Umeno, M.

2000-01-30T23:59:59.000Z

200

Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering  

Science Conference Proceedings (OSTI)

Cuprous oxide (Cu{sub 2}O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu{sub 2}O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu{sub 2}O at temperatures above 250 K, reaching 62 cm{sup 2}/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu{sub 2}O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications.

Lee, Yun Seog; Winkler, Mark T.; Siah, Sin Cheng; Brandt, Riley; Buonassisi, Tonio [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2011-05-09T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Thin film absorber for a solar collector  

SciTech Connect

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, William G. (Cutchogue, NY)

1985-01-01T23:59:59.000Z

202

Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells  

DOE Green Energy (OSTI)

This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

Chu, T.L. (University of South Florida, Tampa, FL (United States))

1992-04-01T23:59:59.000Z

203

Superhydrophobic Thin Film Symposium | ornl.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

Superhydrophobic Thin Film Symposium Superhydrophobic Thin Film Symposium Sep 05 2012 12:00 AM - 05:00 PM Hosted by Oak Ridge Laboratory's Partnerships Directorate and focusing on the recent LDRD Launch project work completed by Dr. Tolga Aytug and Dr. John T. Simpson (ORNL research PI's). Oak Ridge, TN Oak Ridge National Laboratory CONTACT : Email: Cassie Lopez Phone:(865) 576-9294 Add to Calendar SHARE Hosted by Oak Ridge Laboratory's Partnerships Directorate and focusing on the recent LDRD Launch project work completed by Dr. Tolga Aytug and Dr. John T. Simpson (ORNL research PI's). Purpose To share the ORNL Superhydrophonbic Thin Film technology to prospective commercial partners. Date and Time The conference will be held on the morning of Wednesday September 5th at Oak Ridge National Laboratory (ORNL) by Partnerships and Technology

204

Method for synthesizing thin film electrodes  

SciTech Connect

A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

Boyle, Timothy J. (Albuquerque, NM)

2007-03-13T23:59:59.000Z

205

Thin-film rechargeable lithium batteries  

SciTech Connect

Small thin-film rechargeable cells have been fabricated with a lithium phosphorus oxyniuide electrolyte, Li metal anode, and Li{sub 1-x}Mn{sub 2}O{sub 4} as the cathode film. The cathode films were fabricated by several different techniques resulting in both crystalline and amorphous films. These were compared by observing the cell discharge behavior. Estimates have been made for the scale-up of such a thin-film battery to meet the specifications for the electric vehicle application. The specific energy, energy density, and cycle life are expected to meet the USABC mid-term criteria. However, the areas of the thin-films needed to fabricate such a cell are very large. The required areas could be greatly reduced by operating the battery at temperatures near 100{degrees}C or by enhancing the lithium ion transport rate in the cathode material.

Dudney, N.J.; Bates, J.B.; Lubben, D.

1994-11-01T23:59:59.000Z

206

Mesoscale morphologies in polymer thin films.  

Science Conference Proceedings (OSTI)

In the midst of an exciting era of polymer nanoscience, where the development of materials and understanding of properties at the nanoscale remain a major R&D endeavor, there are several exciting phenomena that have been reported at the mesoscale (approximately an order of magnitude larger than the nanoscale). In this review article, we focus on mesoscale morphologies in polymer thin films from the viewpoint of origination of structure formation, structure development and the interaction forces that govern these morphologies. Mesoscale morphologies, including dendrites, holes, spherulites, fractals and honeycomb structures have been observed in thin films of homopolymer, copolymer, blends and composites. Following a largely phenomenological level of description, we review the kinetic and thermodynamic aspects of mesostructure formation outlining some of the key mechanisms at play. We also discuss various strategies to direct, limit, or inhibit the appearance of mesostructures in polymer thin films as well as an outlook toward potential areas of growth in this field of research.

Ramanathan, M.; Darling, S. B. (Center for Nanoscale Materials)

2011-06-01T23:59:59.000Z

207

Photovoltaics  

DOE Green Energy (OSTI)

Summarizes the goals and activities of the DOE Solar Energy Technologies Program efforts within its photovoltaics subprogram.

Not Available

2008-09-01T23:59:59.000Z

208

Solution of thin film magnetization problems in type-II superconductivity  

Science Conference Proceedings (OSTI)

Keywords: critical current, numerical solution, superconductivity, thin film, variational inequality

Leonid Prigozhin

1998-07-01T23:59:59.000Z

209

Thin-film Rechargeable Lithium Batteries  

DOE R&D Accomplishments (OSTI)

Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

Dudney, N. J.; Bates, J. B.; Lubben, D.

1995-06-00T23:59:59.000Z

210

Thin-film rechargeable lithium batteries  

SciTech Connect

Thin-film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin-film battery.

Dudney, N.J.; Bates, J.B.; Lubben, D. [Oak Ridge National Lab., TN (United States). Solid State Div.

1995-06-01T23:59:59.000Z

211

Nanostructured Inorganic Thin Film Enabled Fiber Optic Sensors for ...  

Science Conference Proceedings (OSTI)

... Thin Film Enabled Fiber Optic Sensors for Gas Sensing in Energy and Environmental Systems ... Co-Doped TiO2 Nanoparticles and Thin Films for Enhanced Solar Energy Utilization ... Synthesis of Magnetic Core-TS-1 Zeolite Shell Catalyst.

212

SAW determination of surface area of thin films  

DOE Patents (OSTI)

N.sub.2 adsorption isotherms are measured from thin films on SAW devices. The isotherms may be used to determine the surface area and pore size distribution of thin films.

Frye, Gregory C. (Albuquerque, NM); Martin, Stephen J. (Albuquerque, NM); Ricco, Antonio J. (Albuquerque, NM)

1990-01-01T23:59:59.000Z

213

Using in Situ Thin Film Stress Measurements to Understand ...  

Science Conference Proceedings (OSTI)

Symposium, Nanostructured Materials for Lithium Ion Batteries and for Supercapacitors. Presentation Title, Using in Situ Thin Film Stress Measurements to ...

214

Synthesis and Characterization of Plasma Polymerized Thin Films ...  

Science Conference Proceedings (OSTI)

Presentation Title, Synthesis and Characterization of Plasma Polymerized Thin Films Deposited from Benzene and Hexamethyldisiloxane Using (PECVD) ...

215

Fracture and Delamination in Thin Film Si Electrodes  

Science Conference Proceedings (OSTI)

Symposium, Nanostructured Materials for Lithium Ion Batteries and for Supercapacitors. Presentation Title, Fracture and Delamination in Thin Film Si Electrodes.

216

Magnetic properties of TM/RE bilayer thin films  

Science Conference Proceedings (OSTI)

... Magnetic properties of TM/RE bilayer thin films. I. Zoto University of Alabama. The magnetic recording technology badly ...

217

High-Throughput Thin Film Approach for Screening of Temperature-Pressure-Composition Phase Space  

SciTech Connect

Many solar energy technologies, for example CIGS and CdTe photovoltaics, utilize materials in thin film form. The equilibrium phase diagrams for these and other more novel solar energy materials are not known or are irrelevant because of the non-equilibrium character of the thin film growth processes. We demonstrate a high-throughput thin film approach for screening of temperature-pressure-composition phase diagrams and phase spaces. The examples in focus are novel solar absorbers Cu-N, Cu-O and p-type transparent conductors in the Cr2O3-MnO system. The composition axis of the Cr2O3-MnO phase diagram was screened using a composition spread method. The temperature axis of the Mn-O phase diagram was screened using a temperature spread method. The pressure axes of the Cu-N and Cu-O phase diagrams were screened using rate spread method with the aid of non-equilibrium growth phenomena. Overall these three methods constitute an approach to high-throughput screening of inorganic thin film phase diagrams. This research is supported by U.S. Department of Energy as a part of two NextGen Sunshot projects and an Energy Frontier Research Center.

Zakutayev, A.; Subramaniyan, A.; Caskey, C. M.; Ndione, P. F.; Richards, R. M.; O'Hayre, R.; Ginley, D. S.

2013-01-01T23:59:59.000Z

218

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES  

E-Print Network (OSTI)

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES S. Suresh1 , T.-G. Nieh2 and B.W. Choi2: Mechanical properties; Nano-indentation; Thin films; Copper; Dislocations Introduction Indentation methods films on substrates (e.g., [2,3]) using instrumented indentation. Nano-indentation studies of thin films

Suresh, Subra

219

Investigations of CuInSe2 Thin Films and Contacts: Annual Subcontract Report, 1 January 1990 - 28 February 1991  

DOE Green Energy (OSTI)

This report describes research into electrical contacts for copper indium diselenide (CulnSe2) polycrystalline thin films used for solar cell applications. Molybdenum contacts have historically been the most promising for heterojunction solar cells. This program studied contact stability by investigating thermally induced bilayer reactions between molybdenum and copper, indium, and selenium. Because selenization is widely used to fabricate CulnSe2 thin films for photovoltaic cells, a second part of the program investigated how the morphologies, phases, and reactions of pre-selenization Cu-In structures are affected by the deposition process and heat treatments.

Nicolet, M. A.

1991-10-01T23:59:59.000Z

220

Physical models of thin film polycrystalline solar cells based on measured grain-boundary and electronic-parameter properties. Final report, September 18, 1978-December 31, 1979  

DOE Green Energy (OSTI)

The research has sought the following: to identify and characterize the basic photovoltaic mechanisms that govern the conversion efficiency of polycrystalline thin-film solar cells; to experimentally determine the electronic parameters related to these photovoltaic mechanisms; and to relate these mechanisms and parameters to the conversion efficiency through theoretical physical models developed for engineering design. These objectives are all intimately related. The emphasis of the work has been on polysilicon, although it is building a foundation of understanding useful for similar research in the future on other thin-film materials. Progress is reported. (WHK)

Lindholm, F.A.; Fossum, J.G.; Holloway, P.A.; Neugroschel, A.

1979-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Electrostatic thin film chemical and biological sensor  

DOE Patents (OSTI)

A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

Prelas, Mark A. (Columbia, MO); Ghosh, Tushar K. (Columbia, MO); Tompson, Jr., Robert V. (Columbia, MO); Viswanath, Dabir (Columbia, MO); Loyalka, Sudarshan K. (Columbia, MO)

2010-01-19T23:59:59.000Z

222

Rechargeable thin-film lithium batteries  

SciTech Connect

Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6-{mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin-film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin-film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin-film lithium batteries.

Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, Xiaohua

1993-08-01T23:59:59.000Z

223

Superconducting thin films on potassium tantalate substrates  

DOE Patents (OSTI)

A superconductive system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

Feenstra, Roeland (Oak Ridge, TN); Boatner, Lynn A. (Oak Ridge, TN)

1992-01-01T23:59:59.000Z

224

Packaging material for thin film lithium batteries  

SciTech Connect

A thin film battery including components which are capable of reacting upon exposure to air and water vapor incorporates a packaging system which provides a barrier against the penetration of air and water vapor. The packaging system includes a protective sheath overlying and coating the battery components and can be comprised of an overlayer including metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-metal-ceramic combination.

Bates, John B. (116 Baltimore Dr., Oak Ridge, TN 37830); Dudney, Nancy J. (11634 S. Monticello Rd., Knoxville, TN 37922); Weatherspoon, Kim A. (223 Wadsworth Pl., Oak Ridge, TN 37830)

1996-01-01T23:59:59.000Z

225

Annealed CVD molybdenum thin film surface  

DOE Patents (OSTI)

Molybdenum thin films deposited by pyrolytic decomposition of Mo(CO).sub.6 attain, after anneal in a reducing atmosphere at temperatures greater than 700.degree. C., infrared reflectance values greater than reflectance of supersmooth bulk molybdenum. Black molybdenum films deposited under oxidizing conditions and annealed, when covered with an anti-reflecting coating, approach the ideal solar collector characteristic of visible light absorber and infrared energy reflector.

Carver, Gary E. (Tucson, AZ); Seraphin, Bernhard O. (Tucson, AZ)

1984-01-01T23:59:59.000Z

226

Thin Film Solid Oxide Fuel Cells  

Science Conference Proceedings (OSTI)

A novel solid oxide fuel cell (SOFC) design that can be fabricated entirely using low-temperature, thin-film processing is described. Potential advantages of the cell are reduced materials costs and improved fuel-cell characteristics. The critical design feature is the use of thin (approximately equal to 50 nanometers), catalytically-active oxide layers on a < 10 micrometer thick yttria-stabilized zirconia (YSZ) supported electrolyte to minimize reaction overpotentials and ohmic losses. Doped ceria at th...

1995-03-29T23:59:59.000Z

227

Polycrystalline thin film materials and devices  

DOE Green Energy (OSTI)

Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. (Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion)

1992-10-01T23:59:59.000Z

228

Fabrication Of Multilayered Thin Films Via Spin-Assembly  

NLE Websites -- All DOE Office Websites (Extended Search)

Fabrication Of Multilayered Thin Films Via Spin-Assembly Fabrication Of Multilayered Thin Films Via Spin-Assembly Fabrication Of Multilayered Thin Films Via Spin-Assembly A process of forming multilayer thin film heterostructures. Available for thumbnail of Feynman Center (505) 665-9090 Email Fabrication Of Multilayered Thin Films Via Spin-Assembly A process of forming multilayer thin film heterostructures is disclosed and includes applying a solution including a first water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species onto a substrate to form a first coating layer on the substrate, drying the first coating layer on the substrate, applying a solution including a second water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species

229

Evaluation of Thin-film Interfacial Properties Using Indentation Test  

Science Conference Proceedings (OSTI)

A thin film's reliable question is depend on interfacial characterization, so evaluating interfacial characterization is the most important things in this test. So far ...

230

Ferroelectric Thin Film Capacitors to Enable a Miniaturized Smart L ...  

Science Conference Proceedings (OSTI)

The effects ultra-violet (UV)-assisted processing and compositional grading of BST capacitor thin films will be presented and the material property trade-offs for  ...

231

Thin film techniques for solid oxide fuel cells  

Thin film techniques for solid oxide fuel cells V.E.J. van Dieten and J. Schoonman Laboratory ... ticles stay in the hot temperature region can be ...

232

Electron Beam Evaporator Systems for Thin Film Deposition  

Science Conference Proceedings (OSTI)

The Thin Film and Nanostructure Processing Group has two high-vacuum, electron beam evaporator systems for fabrication of single and multilayer ...

2012-10-23T23:59:59.000Z

233

Layer-by-Layer Assembled Thin Films for Battery Electrolytes  

Science Conference Proceedings (OSTI)

Presentation Title, Layer-by-Layer Assembled Thin Films for Battery Electrolytes ... Abstract Scope, Exponential layer-by-layer (eLBL) assembled battery ...

234

Tungsten-doped thin film materials - Energy Innovation Portal  

A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a ...

235

Thin-Film Ferroelectric Materials for Decoupling and Tunable ...  

Science Conference Proceedings (OSTI)

Symposium, ACerS Richard M. Fulrath Award Symposium. Presentation Title, Thin-Film Ferroelectric Materials for Decoupling and Tunable Capacitors. Author( s) ...

236

Development of Polyimide/SMA Thin-Film Actuator  

Science Conference Proceedings (OSTI)

Symposium, Symposium I: Biomaterials, Smart Materials and Structures. Presentation Title, Development of Polyimide/SMA Thin-Film Actuator. Author(s), Akira ...

237

Integrated Technology of Decoupling BST Thin Film Capacitors  

Science Conference Proceedings (OSTI)

Jun 16, 2007 ... The integration technology of decoupling capacitors, which contain multi-layered Cu wiring and Barium Strontium Titanate (BST) thin film ...

238

How Thin Film Processing Can Contribute to Understanding the ...  

Science Conference Proceedings (OSTI)

Presentation Title, How Thin Film Processing Can Contribute to Understanding the Materials Science of the MAX Phases. Author(s), Per Eklund, Ulf Jansson, ...

239

Fabrication of Solid Oxide Fuel Cells via Thin Film Techniques  

Science Conference Proceedings (OSTI)

We decided to use thin film techniques to solve this problem. Among various methods of lowering the operation temperature for SOFCs, adopting bi-layer ...

240

Lessons Learned in Sputtering TiNi Thin Film  

Science Conference Proceedings (OSTI)

Experimental results have been published in journals and conference proceedings, but as yet TiNi thin film is not commercially available. The author and ...

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

AMORPHOUS THIN FILMS CONSISTING OF TERNARY MgZnCa ...  

Science Conference Proceedings (OSTI)

Jul 20, 2012 ... AMORPHOUS THIN FILMS CONSISTING OF TERNARY MgZnCa-ALLOYS by K. Schlüter, C. Zamponi, U. Schürmann, N. Hort, L. Kienle, K.U. ...

242

Chemistry Chemical Analysis Thin-Films Information at NIST  

Science Conference Proceedings (OSTI)

... Method Can Affect the Use of Block Copolymer Thin Films (10/18 ... NIST Scientists Address 'Wrinkles' in Transparent Film Development (10/02/2012). ...

2010-09-24T23:59:59.000Z

243

NIST Testing Method Quickly Tells Whether Thin Films Are ...  

Science Conference Proceedings (OSTI)

... and emerging technology areas that rely on thin-film advances for ... For films less than 1 micrometer thick, mechanical-property measurements made ...

2013-01-03T23:59:59.000Z

244

Interface Adhesion and Coating Integrity of the Thin Film Au ...  

Science Conference Proceedings (OSTI)

Current scientific emphasis is on process development and optimization of thin film Au-interconnect metallization for the Bi2Te3-based TE module used for the ...

245

Development of Thin-Film Materials Technology for Energy Applications...  

NLE Websites -- All DOE Office Websites (Extended Search)

Development of Thin-Film Materials Technology for Energy Applications: High Temperature Superconductors, etc. Speaker(s): Ronald Reade Date: January 15, 2002 - 12:00pm Location:...

246

Bi-based Piezoelectric Thin Films via Chemical Solution Deposition  

Science Conference Proceedings (OSTI)

BNT-BKT-BMgT thin films showed very promising piezoelectric response with ... Chemical Quantification of Oxide Interfaces Using Energy-dispersive X-ray ...

247

Thermoelectric effect in very thin film Pt/Au thermocouples  

E-Print Network (OSTI)

thin films, the electrical resistivity ratio ? F /? B is BStudies of the electrical resistivity of metallic films [23,calculate the electrical resistivity and the thermoelectric

Salvadori, M.C.; Vaz, A.R.; Teixeira, F.S.; Cattani, M.; Brown, I.G.

2006-01-01T23:59:59.000Z

248

Atmospheric-Pressure Chemical Vapor Deposition of Iron Pyrite Thin Films  

Science Conference Proceedings (OSTI)

Iron pyrite (cubic FeS{sub 2}) is a promising candidate absorber material for earth-abundant thin-film solar cells. In this report, single-phase, large-grain, and uniform polycrystalline pyrite thin films are fabricated on glass and molybdenum-coated glass substrates by atmospheric-pressure chemical vapor deposition (AP-CVD) using the reaction of iron(III) acetylacetonate and tert-butyl disulfide in argon at 300 C, followed by sulfur annealing at 500--550 C to convert marcasite impurities to pyrite. The pyrite-marcasite phase composition depends strongly on the concentration of sodium in the growth substrate and the sulfur partial pressure during annealing. Phase and elemental composition of the films are characterized by X-ray diffraction, Raman spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering spectrometry, and X-ray photoelectron spectroscopy. The in-plane electrical properties are surprisingly insensitive to phase and elemental impurities, with all films showing p-type, thermally activated transport with a small activation energy ({approx}30 meV), a room- temperature resistivity of {approx}1 {Omega} cm, and low mobility. These ubiquitous electrical properties may result from robust surface effects. These CVD pyrite thin films are well suited to fundamental electrical studies and the fabrication of pyrite photovoltaic device stacks.

Berry, Nicholas; Cheng, Ming; Perkins, Craig L.; Limpinsel, Moritz; Hemminger, John C.; Law, Matt (NREL); (UCI)

2012-10-23T23:59:59.000Z

249

Processing approach towards the formation of thin-film Cu(In,Ga)Se2  

DOE Patents (OSTI)

A two-stage method of producing thin-films of group IB-IIIA-VIA on a substrate for semiconductor device applications includes a first stage of depositing an amorphous group IB-IIIA-VIA precursor onto an unheated substrate, wherein the precursor contains all of the group IB and group IIIA constituents of the semiconductor thin-film to be produced in the stoichiometric amounts desired for the final product, and a second stage which involves subjecting the precursor to a short thermal treatment at 420.degree. C.-550.degree. C. in a vacuum or under an inert atmosphere to produce a single-phase, group IB-III-VIA film. Preferably the precursor also comprises the group VIA element in the stoichiometric amount desired for the final semiconductor thin-film. The group IB-IIIA-VIA semiconductor films may be, for example, Cu(In,Ga)(Se,S).sub.2 mixed-metal chalcogenides. The resultant supported group IB-IIIA-VIA semiconductor film is suitable for use in photovoltaic applications.

Beck, Markus E. (Falkensee, DE); Noufi, Rommel (Golden, CO)

2003-01-01T23:59:59.000Z

250

Articles including thin film monolayers and multilayers  

DOE Patents (OSTI)

This invention pertains to thin film assemblies or devices useful as sensors, nonlinear optical materials, and trace material scavengers. It claims a base substrate having an oxide surface layer, and a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate. A metal species may be provided attached to the ligand, and a multifunctional organic ligand may be provided attached to the metal species. A second metal species may be provided attached to the multifunctional ligand.

Li, DeQuan; Swanson, B.I.

1992-12-31T23:59:59.000Z

251

Recent progress in nanostructured multiferroic Bi{sub 2}FeCrO{sub 6} thin films  

Science Conference Proceedings (OSTI)

We report the latest progress on the growth and characterization of Bi{sub 2}FeCrO{sub 6} (BFCO), a recently discovered multiferroic system. BFCO thin films and nanostructures exhibit exceptional multiferroic properties at room temperature. The growth of pure BFCO thin films on STO substrates is possible only in a narrow window of deposition parameters (i.e., Oxygen pressure pO{sub 2}=1.2 Multiplication-Sign 10{sup -2} mbar and around a substrate temperature T{sub S}=680 Degree-Sign C). The epitaxial growth stabilizes the metastable single phase of this material and promotes the Fe/Cr cation ordering in both thin films and nanostructures. This cationic ordering which is responsible for good magnetic properties of BFCO is also at the origin of pronounced photovoltaic (PV) properties observed in the epitaxial films grown on STO substrates. The results indicate that the ferroelectric polarization plays a dominant role in the observed PV effect. - Graphical abstract: (Top) Crystal structure of BFCO thin films deposited on (1 1 1)-oriented SrTiO3:Nb substrates and direct evidence of the presence of cationic ordering Fe/Cr in the films. (Bottom) Control of the crystal orientation and the shape of the epitaxial nanostructures by the orientation of the niobium-doped STO substrates. Highlights: Black-Right-Pointing-Pointer Growth optimization of Bi{sub 2}FeCrO{sub 6} (BFCO) thin films and nanostructures by pulsed laser deposition. Black-Right-Pointing-Pointer Ordered BFCO single phase have been stabilized by epitaxial strain. Black-Right-Pointing-Pointer Arbitrary patterns of heteroepitaxial multiferroic BFCO nanostructures have been fabricated by PLD combined with nanostenciling. Black-Right-Pointing-Pointer Experimental characterizations revealed the excellent multiferroic character of BFCO thin films and nanostructures. Black-Right-Pointing-Pointer Unprecedentedly high power conversion efficiency for ferroelectrics was observed in 125 nm-thick highly ordered BFCO films.Graphical abstract legend.

Nechache, Riad, E-mail: Nechache@emt.inrs.ca [NAST Center and Department of Chemical Science and Technology, University of Rome Tor Vergata Via della Ricerca Sceintifica 1, 00133 Rome Italy (Italy); Centre Energie, Materiaux et Telecommunications, INRS, 1650, boulevard Lionel-Boulet, Varennes, Quebec J3x 1S2 (Canada); Rosei, Federico, E-mail: rosei@emt.inrs.ca [Centre Energie, Materiaux et Telecommunications, INRS, 1650, boulevard Lionel-Boulet, Varennes, Quebec J3x 1S2 (Canada)

2012-05-15T23:59:59.000Z

252

Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization...  

NLE Websites -- All DOE Office Websites (Extended Search)

Solar - AZ Applied Materials - CA Primestar Solar - CO Miasole - CA Power Films - IA AVA Solar - CO Energy PV - NJ Energy PV - NJ Solar Fields - OH Ascent Solar - CO MV Systems -...

253

Energy Basics: Polycrystalline Thin Film Used in Photovoltaics  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

layer on top called the window layer. The window layer's role is to absorb light energy from only the high-energy end of the spectrum. It must be thin enough and have a wide...

254

Energy Basics: Single-Crystalline Thin Film Used in Photovoltaics  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

is not rare, but it is poisonous. Gallium arsenide has been developed for use in solar cells at about the same time that it has been developed for light-emitting diodes,...

255

Pioneering Inkjet Printing Technology Produces Thin-Film Photovoltaics...  

NLE Websites -- All DOE Office Websites (Extended Search)

A major application of these modules-in which the solar absorber can be deposited on virtually any type of material and in any shape-is in the huge building-integrated photo-...

256

Thin-film rechargeable lithium batteries  

SciTech Connect

Rechargeable thin-films batteries with lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. The cathodes include TiS{sub 2}, the {omega} phase of V{sub 2}O{sub 5}, and the cubic spinel Li{sub x}Mn{sub 2}O{sub 4} with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The development of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25 C of 2 {mu}S/cm. Thin-film cells have been cycled at 100% depth of discharge using current densities of 2 to 100 {mu}A/cm{sup 2}. The polarization resistance of the cells is due to the slow insertion rate of Li{sup +} ions into the cathode. Chemical diffusion coefficients for Li{sup +} ions in the three types of cathodes have been estimated from the analysis of ac impedance measurements.

Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

1993-11-01T23:59:59.000Z

257

Rechargeable thin-film lithium batteries  

Science Conference Proceedings (OSTI)

Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

1993-09-01T23:59:59.000Z

258

Spin hall effect in paramagnetic thin films  

E-Print Network (OSTI)

Spintronics, an abbreviation of spin based electronics and also known as magneto electronics, has attracted a lot of interest in recent years. It aims to explore the role of electrons’ spins in building next generation electric devices. Using electrons’ spins rather than electrons’ charges may allow faster, lower energy cost devices. Spin Hall Effect is an important subfield of spintronics. It studies spin current, spin transport, and spin accumulation in paramagnetic systems. It can further understanding of quantum physics, device physics, and may also provide insights for spin injection, spin detection and spin manipulation in the design of the next generation spintronics devices. In this experimental work, two sets of experiments were prepared to detect the Spin Hall Effect in metallic systems. The first set of experiments aims to extract Spin Hall Effect from Double Hall Effect in micrometer size metal thin film patterns. Our experiments proved that the Spin Hall Effect signal was much smaller than the theoretically calculated value due to higher electrical resistivity in evaporated thin films. The second set of experiments employs a multi-step process. It combines micro fabrication and electrochemical method to fabricate a perpendicular ferromagnet rod as a spin injector. Process description and various techniques to improve the measurement sensitivity are presented. Measurement results in aluminum, gold and copper are presented in Chapters III, IV and V. Some new experiments are suggested in Chapters V and VI.

Xu, Huachun

2008-12-01T23:59:59.000Z

259

Apparatus for laser assisted thin film deposition  

DOE Patents (OSTI)

A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

Warner, Bruce E. (Pleasanton, CA); McLean, II, William (Oakland, CA)

1996-01-01T23:59:59.000Z

260

Thin-film Rechargeable Lithium Batteries  

DOE R&D Accomplishments (OSTI)

Rechargeable thin films batteries with lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. The cathodes include TiS{sub 2}, the {omega} phase of V{sub 2}O{sub 5}, and the cubic spinel Li{sub x}Mn{sub 2}O{sub 4} with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The development of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25 C of 2 {mu}S/cm. Thin film cells have been cycled at 100% depth of discharge using current densities of 2 to 100 {mu}A/cm{sup 2}. The polarization resistance of the cells is due to the slow insertion rate of Li{sup +} ions into the cathode. Chemical diffusion coefficients for Li{sup +} ions in the three types of cathodes have been estimated from the analysis of ac impedance measurements.

Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, X.

1993-11-00T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Active superconducting devices formed of thin films  

DOE Patents (OSTI)

Active superconducting devices are formed of thin films of superconductor which include a main conduction channel which has an active weak link region. The weak link region is composed of an array of links of thin film superconductor spaced from one another by voids and selected in size and thickness such that magnetic flux can propagate across the weak link region when it is superconducting. Magnetic flux applied to the weak link region will propagate across the array of links causing localized loss of superconductivity in the links and changing the effective resistance across the links. The magnetic flux can be applied from a control line formed of a superconducting film deposited coplanar with the main conduction channel and weak link region on a substrate. The devices can be formed of any type to superconductor but are particularly well suited to the high temperature superconductors since the devices can be entirely formed from coplanar films with no overlying regions. The devices can be utilized for a variety of electrical components, including switching circuits, amplifiers, oscillators and modulators, and are well suited to microwave frequency applications.

Martens, Jon S. (Madison, WI); Beyer, James B. (Madison, WI); Nordman, James E. (Madison, WI); Hohenwarter, Gert K. G. (Madison, WI)

1991-05-28T23:59:59.000Z

262

Thermal Sensor Arrays for The Combinatorial Analysis of Thin Films  

E-Print Network (OSTI)

Thermal Sensor Arrays for The Combinatorial Analysis of Thin Films A dissertation presented Advisor Author Joost J. Vlassak Patrick J. McCluskey Thermal Sensor Arrays for The Combinatorial Analysis analysis of the thermophysical properties of thin films. The continuous growth of integrated circuits

263

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors  

Science Conference Proceedings (OSTI)

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (?-HfIZO) thin film transistors (TFTs). Co-sputtering-processed ?-HfIZO thin films have shown an amorphous phase in nature. ...

Sheng-Po Chang; San-Syong Shih

2012-01-01T23:59:59.000Z

264

Long-laser-pulse method of producing thin films  

DOE Patents (OSTI)

The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California. This invention relates in general to techniques for producing thin films, and in particular to a method of using pulsed laser to deposit high temperature supercoducting thin films. 5 figs.

Balooch, M.; Olander, D.R.; Russo, R.E.

1990-02-20T23:59:59.000Z

265

Organic thin film transistors with double insulator layers  

Science Conference Proceedings (OSTI)

We have investigated a double-layer structured gate dielectric for the organic thin films transistor (OTFT) with the purpose of improving the performance of the SiO"2 gate insulator. A 50nm PMMA layer was coated on top of the SiO"2 gate insulator as ... Keywords: Mobility, On/off ratio, Organic thin film transistor, PMMA

X. Liu; Y. Bai; L. Chen; F. X. Wei; X. B. Zhang; X. Y. Jiang; Zh. L. Zhang

2007-08-01T23:59:59.000Z

266

Ultrafast thin-film laser-induced breakdown spectroscopy of doped...  

NLE Websites -- All DOE Office Websites (Extended Search)

Ultrafast thin-film laser-induced breakdown spectroscopy of doped oxides Title Ultrafast thin-film laser-induced breakdown spectroscopy of doped oxides Publication Type Journal...

267

A Hyper-Elastic Thin Film Nitinol Flow Diverter for Brain Aneurysms  

Science Conference Proceedings (OSTI)

The thin film Nitinol is sputter deposited with transformation temperatures at or near body temperature (37C). The thin film Nitinol is micromachined using a lift off ...

268

Progress in High-Performance PV: Polycrystalline Thin-Film Tandem Cells  

DOE Green Energy (OSTI)

The High-Performance Photovoltaic (HiPerf PV) Project was initiated by the U.S. Department of Energy to substantially increase the viability of PV for cost-competitive applications. The goal is that PV will contribute significantly to the U.S. and world energy supply and environmental enhancement in the 21st century. The HiPerf PV Project aims at exploring the ultimate performance limits of existing PV technologies, approximately doubling their sunlight-to-electricity conversion efficiencies during its course, to accelerate and enhance their impact in the marketplace. To accomplish this, the National Center for Photovoltaics (NCPV) directs in-house and subcontracted research in high-performance polycrystalline thin-film and multijunction concentrator devices. This paper will describe progress of the subcontractor and in-house R&D on critical pathways for a PV technology having a high potential to reach cost-competitiveness goals: 25%-efficient, low-cost polycrystalline thin-film tandems for large-area, flat-plate modules.

Symko-Davies, M.

2004-08-01T23:59:59.000Z

269

Ultrasonically Sprayed and Inkjet Printed Thin Film Electrodes for Organic Solar Cells  

Science Conference Proceedings (OSTI)

Thin film pi-conjugated poly(3,4ethylenedioxythiophene): poly(styrenesulphonate) (PEDOT:PSS) as a hole transport layer on indium tin oxide is a key element in some of the most efficient organic photovoltaic and light emitting devices to date. Films are typically deposited by spincoating, which is not readily scalable. In this paper we investigate the critical parameters for both inkjet and ultrasonic spray deposition of PEDOT:PSS thin films on commercial indium tin oxide as a potentially scalable approach to contact formation. Inkjet parameters investigated include drop spacing and substrate temperature. Ultrasonic spray coating parameters investigated include substrate temperature and solution flow rate. We also show that the ink viscosity has a Newtonian character, making it well suited for inkjet printing. Films were characterized via optical profilometry, sheet resistance and atomic force microscopy. Optimized inkjet printed and ultrasonic sprayed PEDOT:PSS films were then compared to spincast layers in a prototypical bulk heterojunction photovoltaic device employing a poly(3-hexylthiophene) and [6,6]-PCBM (6,6-phenylC61-butyric acid-methyl ester) blend as the absorber. Practically all three approaches produced devices of comparable efficiency. Efficiencies were 3.6%, 3.5% and 3.3% for spin, spray and inkjet depositions respectively.

Steirer, K. X.; Berry, J. J.; Reese, M. O.; van Hest, M. F. A. M.; Miedaner, A.; Liberatore, M. W.; Collins, R. T.; Ginley, D. S.

2009-01-01T23:59:59.000Z

270

Characterization of lithium phosphorous oxynitride thin films  

DOE Green Energy (OSTI)

Electrical and electrochemical properties of an amorphous thin-film lithium electrolyte, lithium phosphorous oxynitride (Lipon), have been studied with emphasis on the stability window vs Li metal and the behavior of the Li/Lipon interface. Ion conductivity of Lipon exhibits Arrhenius behavior at {minus}26 to +140 C, with a conductivity of 1.7 {times} 10{sup {minus}6}S/cm at 25 C and an activity energy of 0.50 {plus_minus} 0.01 eV. A stability window of 5.5 V was observed with respect to a Li{sup +}/Li reference, and no detectable reaction or degradation was evident at the Li/Lipon interface upon lithium cycling.

Yu, Xiaohua; Bates, J.B.; Jellison, G.E. Jr.

1996-01-01T23:59:59.000Z

271

Thin Film Femtosecond Laser Damage Competition  

SciTech Connect

In order to determine the current status of thin film laser resistance within the private, academic, and government sectors, a damage competition was started at the 2008 Boulder Damage Symposium. This damage competition allows a direct comparison of the current state of the art of high laser resistance coatings since they are tested using the same damage test setup and the same protocol. In 2009 a high reflector coating was selected at a wavelength of 786 nm at normal incidence at a pulse length of 180 femtoseconds. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials and layer count, and spectral results will also be shared.

Stolz, C J; Ristau, D; Turowski, M; Blaschke, H

2009-11-14T23:59:59.000Z

272

Thin films of mixed metal compounds  

DOE Patents (OSTI)

Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

Mickelsen, R.A.; Chen, W.S.

1985-06-11T23:59:59.000Z

273

Thin-film forces in pseudoemulsion films  

SciTech Connect

Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

Bergeron, V.; Radke, C.J. [California Univ., Berkeley, CA (United States). Dept. of Chemical Engineering]|[Lawrence Berkeley Lab., CA (United States)

1991-06-01T23:59:59.000Z

274

Rechargeable thin-film electrochemical generator  

DOE Patents (OSTI)

An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

Rouillard, Roger (Beloeil, CA); Domroese, Michael K. (South St. Paul, MN); Hoffman, Joseph A. (Minneapolis, MN); Lindeman, David D. (Hudson, WI); Noel, Joseph-Robert-Gaetan (St-Hubert, CA); Radewald, Vern E. (Austin, TX); Ranger, Michel (Lachine, CA); Sudano, Anthony (Laval, CA); Trice, Jennifer L. (Eagan, MN); Turgeon, Thomas A. (Fridley, MN)

2000-09-15T23:59:59.000Z

275

Titanium nitride thin films for minimizing multipactoring  

DOE Patents (OSTI)

Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.

Welch, Kimo M. (Mountain View, CA)

1979-01-01T23:59:59.000Z

276

Real time intelligent process control system for thin film solar cell manufacturing  

DOE Green Energy (OSTI)

All solar cell manufacturing processes today suffer from manufacturing inefficiencies that currently lead to lower product quality and lower conversion efficiency, increased product cost and greater material and energy consumption. This results in slower solar energy adoption and extends the time solar cells will reach grid parity with traditional energy sources. The thin film solar panel manufacturers struggle on a daily basis with the problem of thin film thickness non-uniformity and other parameters variances over the deposited substrates, which significantly degrade their manufacturing yield and quality. Optical monitoring of the thin films during the process of the film deposition is widely perceived as a necessary step towards resolving the non-uniformity and non-homogeneity problem. In order to enable the development of an optical control system for solar cell manufacturing, a new type of low cost optical sensor is needed, able to acquire local information about the panel under deposition and measure its local characteristics, including the light scattering in very close proximity to the surface of the film. This information cannot be obtained by monitoring from outside the deposition chamber (as traditional monitoring systems do) due to the significant signal attenuation and loss of its scattering component before the reflected beam reaches the detector. In addition, it would be too costly to install traditional external in-situ monitoring systems to perform any real-time monitoring over large solar panels, since it would require significant equipment refurbishing needed for installation of multiple separate ellipsometric systems, and development of customized software to control all of them simultaneously. The proposed optical monitoring system comprises AccuStrata’s fiber optics sensors installed inside the thin film deposition equipment, a hardware module of different components (beyond the scope of this project) and our software program with iterative predicting capability able to control material bandgap and surface roughness as films are deposited. Our miniature fiber optics monitoring sensors are installed inside the vacuum chamber compartments in very close proximity where the independent layers are deposited (an option patented by us in 2003). The optical monitoring system measures two of the most important parameters of the photovoltaic thin films during deposition on a moving solar panel - material bandgap and surface roughness. In this program each sensor array consists of two fiber optics sensors monitoring two independent areas of the panel under deposition. Based on the monitored parameters and their change in time and from position to position on the panel, the system is able to provide to the equipment operator immediate information about the thin films as they are deposited. This DoE Supply Chain program is considered the first step towards the development of intelligent optical control system capable of dynamically adjusting the manufacturing process “on-the-fly” in order to achieve better performance. The proposed system will improve the thin film solar cell manufacturing by improving the quality of the individual solar cells and will allow for the manufacturing of more consistent and uniform products resulting in higher solar conversion efficiency and manufacturing yield. It will have a significant impact on the multibillion-dollar thin film solar market. We estimate that the financial impact of these improvements if adopted by only 10% of the industry ($7.7 Billion) would result in about $1.5 Billion in savings by 2015 (at the assumed 20% improvement). This can b

George Atanasoff

2010-10-29T23:59:59.000Z

277

Real time intelligent process control system for thin film solar cell manufacturing  

SciTech Connect

This project addresses the problem of lower solar conversion efficiency and waste in the typical solar cell manufacturing process. The work from the proposed development will lead toward developing a system which should be able to increase solar panel conversion efficiency by an additional 12-15% resulting in lower cost panels, increased solar technology adoption, reduced carbon emissions and reduced dependency on foreign oil. All solar cell manufacturing processes today suffer from manufacturing inefficiencies that currently lead to lower product quality and lower conversion efficiency, increased product cost and greater material and energy consumption. This results in slower solar energy adoption and extends the time solar cells will reach grid parity with traditional energy sources. The thin film solar panel manufacturers struggle on a daily basis with the problem of thin film thickness non-uniformity and other parameters variances over the deposited substrates, which significantly degrade their manufacturing yield and quality. Optical monitoring of the thin films during the process of the film deposition is widely perceived as a necessary step towards resolving the non-uniformity and non-homogeneity problem. In order to enable the development of an optical control system for solar cell manufacturing, a new type of low cost optical sensor is needed, able to acquire local information about the panel under deposition and measure its local characteristics, including the light scattering in very close proximity to the surface of the film. This information cannot be obtained by monitoring from outside the deposition chamber (as traditional monitoring systems do) due to the significant signal attenuation and loss of its scattering component before the reflected beam reaches the detector. In addition, it would be too costly to install traditional external in-situ monitoring systems to perform any real-time monitoring over large solar panels, since it would require significant equipment refurbishing needed for installation of multiple separate ellipsometric systems, and development of customized software to control all of them simultaneously. The proposed optical monitoring system comprises AccuStrata’s fiber optics sensors installed inside the thin film deposition equipment, a hardware module of different components (beyond the scope of this project) and our software program with iterative predicting capability able to control material bandgap and surface roughness as films are deposited. Our miniature fiber optics monitoring sensors are installed inside the vacuum chamber compartments in very close proximity where the independent layers are deposited (an option patented by us in 2003). The optical monitoring system measures two of the most important parameters of the photovoltaic thin films during deposition on a moving solar panel - material bandgap and surface roughness. In this program each sensor array consists of two fiber optics sensors monitoring two independent areas of the panel under deposition. Based on the monitored parameters and their change in time and from position to position on the panel, the system is able to provide to the equipment operator immediate information about the thin films as they are deposited. This DoE Supply Chain program is considered the first step towards the development of intelligent optical control system capable of dynamically adjusting the manufacturing process “on-the-fly” in order to achieve better performance. The proposed system will improve the thin film solar cell manufacturing by improving the quality of the individual solar cells and will allow for the manufacturing of more consistent and uniform products resulting in higher solar conversion efficiency and manufacturing yield. It will have a significant impact on the multibillion-dollar thin film solar market. We estimate that the financial impact of these improvements if adopted by only 10% of the industry ($7.7 Billion) would result in about $1.5 Billion in savings by 2015 (at the assumed 20% improvement). This can b

George Atanasoff

2010-10-29T23:59:59.000Z

278

Photovoltaic cells employing zinc phosphide  

DOE Patents (OSTI)

A photovoltaic cell having a zinc phosphide absorber. The zinc phosphide can be a single or multiple crystal slice or a thin polycrystalline film. The cell can be a Schottky barrier, heterojunction or homojunction device. Methods for synthesizing and crystallizing zinc phosphide are disclosed as well as a method for forming thin films.

Barnett, Allen M. (Newark, DE); Catalano, Anthony W. (Wilmington, DE); Dalal, Vikram L. (Newark, DE); Masi, James V. (Wilbraham, MA); Meakin, John D. (Newark, DE); Hall, Robert B. (Newark, DE)

1984-01-01T23:59:59.000Z

279

Processing and modeling issues for thin-film solar cell devices: Annual subcontract report, January 16, 1995 -- January 15, 1996  

DOE Green Energy (OSTI)

The overall mission of the Institute of Energy Conversion is the development of thin film photovoltaic cells, modules, and related manufacturing technology and the education of students and professionals in photovoltaic technology. The objectives of this four-year NREL subcontract are to advance the state of the art and the acceptance of thin film PV modules in the areas of improved technology for thin film deposition, device fabrication, and material and device characterization and modeling, relating to solar cells based on CuInSe{sub 2} and its alloys, on a-Si and its alloys, and on CdTe. In the area of CuInSe{sub 2} and its alloys, EEC researchers have produced CuIn{sub 1-x}GaxSe{sub 2} films by selenization of elemental and alloyed films with H{sub 2}Se and Se vapor and by a wide variety of process variations employing co-evaporation of the elements. Careful design, execution and analysis of these experiments has led to an improved understanding of the reaction chemistry involved, including estimations of the reaction rate constants. Investigation of device fabrication has also included studies of the processing of the Mo, US and ZnO deposition parameters and their influence on device properties. An indication of the success of these procedures was the fabrication of a 15% efficiency CuIn{sub 1-x}GaxSe{sub 2} solar cell.

Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Eser, E.; Hegedus, S.S.; McCandless, B.E.; Meyers, P.V.; Shafarman, W.N. [Univ. of Delaware, Newark, DE (United States)

1996-08-01T23:59:59.000Z

280

Nanostructured Thin Film Electrolyte for Thin Film Solid Oxide Fuel Cells  

E-Print Network (OSTI)

Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because they are clean, reliable, and almost entirely pollution-free. SOFCs have flexible fuel selections compared with other fuel cell technologies. The main disadvantage of SOFCs is their high operating temperature (~1000ºC for conventional SOFCs) which leads to cell cracking and formation of non-conducting compounds at electrolyte/electrode interfaces. Therefore, intermediate temperature SOFCs (ITSOFCs) in the range of 500-700 ºC has attracted extensive research interests. To achieve high cell performance at reduced temperatures, it requires high-catalytic activity, high ionic conductivity, and comparable thermal expansion coefficient (TEC) of the cell components. To address the above issues, the research focuses on two main approaches (i.e., the interlayer approach and the electrolyte approach) in order to improve the overall cell performance. First, the design of a thin layer of a vertically-aligned nanocomposite (VAN) structure as an interlayer between the electrolyte and cathode is demonstrated. The development of the VAN structures consisted of the cathode material as a perovskite or ordered double perovskite structure, La0.5Sr0.5CoO3 (LSCO) or PrBaCo2O5 delta (PBCO), and the electrolyte material as a fluorite structure, Ce0.9Gd0.1O1.95 (CGO or GDC), were achieved for thin film solid oxide fuel cell (TFSOFCs). The VAN structure significantly improves the overall performance of the TFSOFC by increasing the interfacial area between the electrolyte and cathode and also acts as a transition layer that improves adhesion and relieves both thermal stress and lattice strain. Second, microstructural and electrical properties of Gd-doped CeO2 (GDC, Ce0.9Gd0.1O1.95) thin films electrolyte are studied for intermediate temperature solid oxide fuel cells (SOFCs). The GDC thin film electrolytes with different grain sizes and grain morphologies were prepared by varying the deposition parameters such as substrate temperature, oxygen partial pressure, target repetition rate, and laser ablation energy. The electrical property of the GDC thin film is strongly affected by the grain size. Third, bilayer electrolytes composed of a gadolinium-doped CeO2 (GDC) layer (~6 micrometer thickness) and an yttria-stabilized ZrO2 (YSZ) layer with various thicknesses (~330 nm, ~440 nm, and ~1 micrometer) are achieved by a pulsed laser deposition (PLD) technique for thin film solid oxide fuel cells (TFSOFCs). One effective approach is to incorporate YSZ thin film as a blocking layer in between the GDC and anode for preventing chemical reduction of GDC and electrical current leakage. This bilayer approach effectively improves the GDC's chemical/ mechanical stability and reduces the OCV loss under reducing conditions. The results suggest that the YSZ thin film serves as a blocking layer for preventing electrical current leakage in the GDC layer and also provides chemical, mechanical, and structural integrity in the cell, which leads to the overall enhanced performance.

Cho, Sungmee

2011-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Solid State Photovoltaic Research Branch  

DOE Green Energy (OSTI)

This report summarizes the progress of the Solid State Photovoltaic Research Branch of the Solar Energy Research Institute (SERI) from October 1, 1988, through September 30,l 1989. Six technical sections of the report cover these main areas of SERIs in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Laser Raman and Luminescence Spectroscopy. Sections have been indexed separately for inclusion on the data base.

Not Available

1990-09-01T23:59:59.000Z

282

SunShot Initiative: Organic Photovoltaics Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Organic Photovoltaics Research to Organic Photovoltaics Research to someone by E-mail Share SunShot Initiative: Organic Photovoltaics Research on Facebook Tweet about SunShot Initiative: Organic Photovoltaics Research on Twitter Bookmark SunShot Initiative: Organic Photovoltaics Research on Google Bookmark SunShot Initiative: Organic Photovoltaics Research on Delicious Rank SunShot Initiative: Organic Photovoltaics Research on Digg Find More places to share SunShot Initiative: Organic Photovoltaics Research on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Organic Photovoltaics Research Graphic showing the seven layers of an organic PV cell: electrode, donor, acceptor, active layer, PEDOT:PSS, transparent conductive oxide, and glass.

283

Photovoltaic Energy Program Overview Fiscal Year 1996  

DOE Green Energy (OSTI)

Significant activities in the National Photovoltaic Program are reported for each of the three main program elements. In Research and Development, advances in thin-film materials and crystalline silicon materials are described. The Technology Development report describes activities in photovoltaic manufacturing technology, industrial expansion, module and array development, and testing photovoltaic system components. Systems Engineering and Applications projects described include projects with government agencies, projects with utilities, documentation of performance for international applications, and product certification.

NONE

1997-05-01T23:59:59.000Z

284

Tandem photonic-crystal thin films surpassing Lambertian light-trapping limit over broad bandwidth and angular range  

E-Print Network (OSTI)

The maximum absorption of solar radiation over the broadest range of frequencies and incident angles using the thinnest material possible has important applications for renewable-energy generation. Complete random texturing of an optically-thick film's surface to increase the path length of scattered light rays, first proposed nearly thirty years ago, has thus far remained the most effective approach for photon absorption over the widest set of conditions. Recent thin-film nanostructured designs involving resonant wave effects of photons have explored the possibility of superior performance though as of yet no proposal satisfying the dual requirements of enhanced and robust absorption over a large fraction of the solar spectrum has been made. Here using recent advances in computational electrodynamics we describe a general strategy for the design of a silicon thin film applicable to photovoltaic cells based on a quasi-resonant approach to light trapping where two partially-disordered photonic-crystal slabs, s...

Oskooi, Ardavan; Noda, Susumu

2013-01-01T23:59:59.000Z

285

Processing and modeling issues for thin-film solar cell devices. Annual subcontract report, January 16, 1993--January 15, 1994  

DOE Green Energy (OSTI)

The overall objective of the research presented in this report is to advance the development and acceptance of thin-film photovoltaic modules by increasing the understanding of film growth and processing and its relationship to materials properties and solar cell performance. The specific means toward meeting this larger goal include: (1) investigating scalable, cost-effective deposition processes; (2) preparing thin-film materials and device layers and completed cell structures; (3) performing detailed material and device analysis; and (4) participating in collaborative research efforts that address the needs of PV-manufacturers. These objectives are being pursued with CuInSe{sub 2}, CdTe and a-Si based solar cells.

Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Hegedus, S.S.; McCandless, B.E.; Shafarman, W.N.; Yokimcus, T.A. [Institute of Energy Conversion, Newark, DE (United States)

1994-09-01T23:59:59.000Z

286

21-kW Thin-Film PV Technology Validation -- An NREL/Solar Energy Centre of India MOU Cooperative Project  

SciTech Connect

This paper summarizes findings during a one-week (27-31 October 2003) site visit to the Thin-Film Technology Test Bed at India's Solar Energy Centre (SEC) near New Delhi. The U.S. and Indian governments signed a Memorandum of Understanding in March 2000 to undertake a 50-50 cost-shared 21-kW thin-film PV technology validation project to evaluate the performance of thin-film photovoltaic (PV) modules under Indian climatic conditions. This project benefits Indian researchers by giving them experience with cost-effective PV materials, and it benefits the United States because data will be sent to the appropriate U.S. thin-film PV manufacturers for evaluation and analysis. During the visit, NREL personnel engaged in technical discussions regarding thin-film PV technologies with Ministry of Non-Conventional Energy Sources engineers and scientists. Issues included inspecting the newly constructed arrays, discussing better methods of electrically loading the PV arrays, taking I-V traces, and gathering baseline I-V data.

McNutt, P. F.; Ullal, H. S.

2005-01-01T23:59:59.000Z

287

21-kW Thin-Film PV Technology Validation -- An NREL/Solar Energy Centre of India MOU Cooperative Project  

DOE Green Energy (OSTI)

This paper summarizes findings during a one-week (27-31 October 2003) site visit to the Thin-Film Technology Test Bed at India's Solar Energy Centre (SEC) near New Delhi. The U.S. and Indian governments signed a Memorandum of Understanding in March 2000 to undertake a 50-50 cost-shared 21-kW thin-film PV technology validation project to evaluate the performance of thin-film photovoltaic (PV) modules under Indian climatic conditions. This project benefits Indian researchers by giving them experience with cost-effective PV materials, and it benefits the United States because data will be sent to the appropriate U.S. thin-film PV manufacturers for evaluation and analysis. During the visit, NREL personnel engaged in technical discussions regarding thin-film PV technologies with Ministry of Non-Conventional Energy Sources engineers and scientists. Issues included inspecting the newly constructed arrays, discussing better methods of electrically loading the PV arrays, taking I-V traces, and gathering baseline I-V data.

McNutt, P. F.; Ullal, H. S.

2005-01-01T23:59:59.000Z

288

Functionalized multilayer thin films for protection against acutely toxic agents  

E-Print Network (OSTI)

The recently developed practice of spraying polyelectrolyte solutions onto a substrate in order to construct thin films via the Layer-by-Layer (LbL) technique has been further investigated and extended. In this process a ...

Krogman, Kevin Christopher

2009-01-01T23:59:59.000Z

289

Fluorination of amorphous thin-film materials with xenon fluoride  

DOE Patents (OSTI)

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

Weil, Raoul B. (Haifa, IL)

1988-01-01T23:59:59.000Z

290

Properties and sensor performance of zinc oxide thin films  

E-Print Network (OSTI)

Reactively sputtered ZnO thin film gas sensors were fabricated onto Si wafers. The atmosphere dependent electrical response of the ZnO micro arrays was examined. The effects of processing conditions on the properties and ...

Min, Yongki, 1965-

2003-01-01T23:59:59.000Z

291

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of...

292

Biological, Electronic, and Functional Thin Films and Coatings II  

Science Conference Proceedings (OSTI)

Mar 4, 2013 ... Recent Developments in Biological, Electronic, and Functional Thin Films ... Improved Mobility and Transmittance of Room Temperature ... excellent scintillator for numerous applications in lasers, optical lens and radiography.

293

Biological, Electronic, and Functional Thin Films and Coatings I  

Science Conference Proceedings (OSTI)

Mar 4, 2013... scan (PPS) and electrical impedance spectroscopy (EIS). ... Eclipse Active and Passive Solar Control Coatings: Hulya ... In this paper two novel thin film coating systems will be presented for energy conservation solar ...

294

Shock Dynamics in Particle-Laden Thin Films  

E-Print Network (OSTI)

We present theory and experiments for thin film particle-laden flow on an incline. At higher particle concentration and inclination angle, a new phenomenon is observed in which a large particle-rich ridge forms at the ...

Dupuy, B.

2005-04-22T23:59:59.000Z

295

Method for making surfactant-templated thin films  

DOE Patents (OSTI)

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (New Orleans, LA); Fan, Hong You (Albuquerque, NM)

2010-08-31T23:59:59.000Z

296

Method for making surfactant-templated thin films  

DOE Patents (OSTI)

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

2002-01-01T23:59:59.000Z

297

Direct printing of lead zirconate titanate thin films  

E-Print Network (OSTI)

Thus far, use of lead zirconate titanate (PZT) in MEMS has been limited due to the lack of process compatibility with existing MEMS manufacturing techniques. Direct printing of thin films eliminates the need for photolithographic ...

Bathurst, Stephen, 1980-

2008-01-01T23:59:59.000Z

298

Chemical vapor deposition of organosilicon and sacrificial polymer thin films  

E-Print Network (OSTI)

Chemical vapor deposition (CVD) produced films for a wide array of applications from a variety of organosilicon and organic precursors. The structure and properties of thin films were controlled by varying processing ...

Casserly, Thomas Bryan

2005-01-01T23:59:59.000Z

299

Synthesis and Patterning of Calcium and Barium Niobate Thin Films ...  

Science Conference Proceedings (OSTI)

Epitaxial CBN thin films were deposited on MgO and NSTO substrates at 800°C under 1mTorr of oxygen pressure using Pulsed Laser Deposition technique.

300

Initiated chemical vapor deposition of functional polyacrylic thin films  

E-Print Network (OSTI)

Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

Mao, Yu, 1975-

2005-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Deriving Deformation Mechanisms in Nanocrystalline AuCu Thin Films  

Science Conference Proceedings (OSTI)

... in a SEM on nc gold and gold-copper thin films adherent to polymer substrate. .... Lithiation Mechanism of Individual SnO2 Nanowires in a Flooding Geometry.

302

Dry-transfer of chemical vapour deposited nanocarbon thin films  

E-Print Network (OSTI)

equipment and measurement I thank Dr Xiulia Xu, high resolution transmission electron microscopy - Dr Caterina Ducati, Mr Sai Shivareddy and Dr Jamie Warner (Oxford University) and assistance with supercapacitor manufacturing and measurement - Mr (soon... that these thin films behave, in a macroscopic sense, similar to traditional c-axis conductive graphite and deviate toward tunnel dominated conduction with increasing degrees of network disorder. Various MWCNT-based thin film field emitters were considered...

Cole, Matthew Thomas

2012-01-10T23:59:59.000Z

303

Photovoltaic Power Generation  

E-Print Network (OSTI)

This report is an overview of photovoltaic power generation. The purpose of the report is to provide the reader with a general understanding of photovoltaic power generation and how PV technology can be practically applied. There is a brief discussion of early research and a description of how photovoltaic cells convert sunlight to electricity. The report covers concentrating collectors, flat-plate collectors, thin-film technology, and building-integrated systems. The discussion of photovoltaic cell types includes single-crystal, poly-crystalline, and thin-film materials. The report covers progress in improving cell efficiencies, reducing manufacturing cost, and finding economic applications of photovoltaic technology. Lists of major manufacturers and organizations are included, along with a discussion of market trends and projections. The conclusion is that photovoltaic power generation is still more costly than conventional systems in general. However, large variations in cost of conventional electrical power, and other factors, such as cost of distribution, create situations in which the use of PV power is economically sound. PV power is used in remote applications such as communications, homes and villages in developing countries, water pumping, camping, and boating. Gridconnected applications such as electric utility generating facilities and residential rooftop installations make up a smaller but more rapidly expanding segment of PV use. Furthermore, as technological advances narrow the cost gap, more applications are becoming economically feasible at an accelerating rate. iii TABLE OF CONTENTS LIST OF TABLES AND FIGURES ...................................................................................v

Tom Penick; Gale Greenleaf Instructor; Thomas Penick; Bill Louk; Bill Louk

1998-01-01T23:59:59.000Z

304

Oxynitride Thin Film Barriers for PV Packaging  

DOE Green Energy (OSTI)

Dielectric thin-film barrier and adhesion-promoting layers consisting of silicon oxynitride materials (SiOxNy, with various stoichiometry) were investigated. For process development, films were applied to glass (TCO, conductive SnO2:F; or soda-lime), polymer (PET, polyethylene terephthalate), aluminized soda-lime glass, or PV cell (a-Si, CIGS) substrates. Design strategy employed de-minimus hazard criteria to facilitate industrial adoption and reduce implementation costs for PV manufacturers or suppliers. A restricted process window was explored using dilute compressed gases (3% silane, 14% nitrous oxide, 23% oxygen) in nitrogen (or former mixtures, and 11.45% oxygen mix in helium and/or 99.999% helium dilution) with a worst-case flammable and non-corrosive hazard classification. Method employed low radio frequency (RF) power, less than or equal to 3 milliwatts per cm2, and low substrate temperatures, less than or equal to 100 deg C, over deposition areas less than or equal to 1000 cm2. Select material properties for barrier film thickness (profilometer), composition (XPS/FTIR), optical (refractive index, %T and %R), mechanical peel strength and WVTR barrier performance are presented.

Glick, S. H.; delCueto, J. A.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

2005-11-01T23:59:59.000Z

305

Elucidating efficiency losses in cuprous oxide (Cu?O) photovoltaics and identifying strategies for efficiency improvement  

E-Print Network (OSTI)

In this thesis, I fabricated and characterized a series of thin-film cuprous oxide (Cu?O) photovoltaic devices. I constructed several different device designs, using sputtered and electrochemically deposited Cu?O. ...

Brandt, Riley Eric

2013-01-01T23:59:59.000Z

306

An analysis of the photovoltaic value chain for reviewing solar energy policy in Massachusetts  

E-Print Network (OSTI)

We explore the photovoltaic value chain for 1st generation crystalline silicon, 2nd generation thin film and 3rd generation organic/ dye-sensitized PV in an effort to evaluate two levels of policy options intended to create ...

Dean, Ryan, S. B. (Ryan G.) Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

307

Photoelectrochemical properties of spray deposited n-CdSe thin films  

SciTech Connect

Polycrystalline cadmium selenide (CdSe) thin films have been prepared by spraying a mixture of an equimolar aqueous solutions of cadmium chloride and selenourea on preheated fluorine doped tin oxide (FTO) coated glass substrates at different substrate temperatures. The cell configuration n-CdSe/1 M (NaOH + Na{sub 2}S + S)/C is used for studying the capacitance-voltage (C-V) characteristics in dark, current-voltage (I-V) characteristics in dark and under illumination, photovoltaic power output and spectral response characteristics of the as deposited films. Photoelectrochemical study shows that as deposited CdSe thin films exhibits n-type of conductivity. The spectral response characteristics of the films at room temperature show a prominent sharp peak at 725 nm. The measured values of efficiency ({eta}) and fill factor (FF) are found to be 0.50% and 0.44 respectively for film deposited at 300 C. Electrochemical impedance spectroscopy studies show that the CdSe film deposited at 300 C shows better performance in PEC cell. (author)

Yadav, A.A.; Barote, M.A.; Masumdar, E.U. [Thin Film Physics Laboratory, Department of Physics, Electronics and Photonics, Rajarshi Shahu Mahavidyalaya, Latur 413512, Maharashtra (India)

2010-05-15T23:59:59.000Z

308

Thin Film Packaging Solutions for High Efficiency OLED Lighting Products  

Science Conference Proceedings (OSTI)

The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology was characterized as having less than 10% change in transmission during the 15,000 hour test period; (3) demonstrated thin film encapsulation of a phosphorescent OLED device with 1,500 hours of lifetime at 60 C and 80% RH; (4) demonstrated that a thin film laminate encapsulation, in addition to the direct thin film deposition process, of a polymer OLED device was another feasible packaging strategy for OLED lighting. The thin film laminate strategy was developed to mitigate defects, demonstrate roll-to-roll process capability for high volume throughput (reduce costs) and to support a potential commercial pathway that is less dependent upon integrated manufacturing since the laminate could be sold as a rolled good; (5) demonstrated that low cost 'blue' glass substrates could be coated with a siloxane barrier layer for planarization and ion-protection and used in the fabrication of a polymer OLED lighting device. This study further demonstrated that the substrate cost has potential for huge cost reductions from the white borosilicate glass substrate currently used by the OLED lighting industry; (6) delivered four-square feet of white phosphorescent OLED technology, including novel high efficiency devices with 82 CRI, greater than 50 lm/W efficiency, and more than 1,000 hours lifetime in a product concept model shelf; (7) presented and or published more than twenty internal studies (for private use), three external presentations (OLED workshop-for public use), and five technology-related external presentations (industry conferences-for public use); and (8) issued five patent applications, which are in various maturity stages at time of publication. Delivery of thin film encapsulated white phosphorescent OLED lighting technology remains a challenging technical achievement, and it seems that commercial availability of thin, bright, white OLED light that meets market requirements will continue to require research and development effort. However, there will be glass encapsulated white OLED lighting products commercialized in niche markets during the 2008 calendar year. This commercializ

None

2008-06-30T23:59:59.000Z

309

Understanding Thin Film Structure for the Rational Design of  

NLE Websites -- All DOE Office Websites (Extended Search)

Understanding Thin Film Structure for the Rational Design of Understanding Thin Film Structure for the Rational Design of High-performance Organic Semiconductors for Plastic Electronics Organic semiconductors are attracting considerable research interest due to their potential applications in low-cost electronics such as organic light emitting diode (OLED) displays, RF identification tags (RFID), smart cards and electronic paper. The development of p-conjugated materials, which are composed of alternating single and double chemical bonds, are the foundation of these applications. In the past decade research in this field has progressed to the extent that desirable charge transport in the organic semiconductor film in organic thin film transistors (OTFT) can be achieved through molecular design by selective placement of electron-rich, electron-withdrawing, and aromatic groups in different parts of the molecule. Although the electronic properties are easily tuned by molecular design, the molecular packing within the thin film and the film microstructure have a significant influence on the OTFT performance. Despite this importance, this interrelationship between molecular structure, thin film molecular packing and charge transport are only poorly understood.

310

Thin-film absorber for a solar collector  

DOE Green Energy (OSTI)

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, W.G.

1982-02-09T23:59:59.000Z

311

Uncooled thin film pyroelectric IR detector with aerogel thermal isolation  

Science Conference Proceedings (OSTI)

Uncooled pyroelectric IR imaging systems, such as night vision goggles, offer important strategic advantages in battlefield scenarios and reconnaissance surveys. Until now, the current technology for fabricating these devices has been limited by low throughput and high cost which ultimately limit the availability of these sensor devices. We have developed and fabricated an alternative design for pyroelectric IR imaging sensors that utilizes a multilayered thin film deposition scheme to create a monolithic thin film imaging element on an active silicon substrate for the first time. This approach combines a thin film pyroelectric imaging element with a thermally insulating SiO{sub 2} aerogel thin film to produce a new type of uncooled IR sensor that offers significantly higher thermal, spatial, and temporal resolutions at a substantially lower cost per unit. This report describes the deposition, characterization and optimization of the aerogel thermal isolation layer and an appropriate pyroelectric imaging element. It also describes the overall integration of these components along with the appropriate planarization, etch stop, adhesion, electrode, and blacking agent thin film layers into a monolithic structure. 19 refs., 8 figs., 6 tabs.

Ruffner, J.A.; Clem, P.G.; Tuttle, B.A. [and others

1998-01-01T23:59:59.000Z

312

Review of Photovoltaic System Reliability Challenges and Opportunities  

Science Conference Proceedings (OSTI)

The silicon photovoltaic (PV) module has reached mature commercial status, capturing 86% of the global PV module market in 2011, with manufacturers offering very similarly configured, essentially interchangeable product designs. As a result of rapidly declining prices for silicon modules, the competing thin-film (TF) module market is experiencing a hiatus in manufacturing expansion. Many TF companies have curtailed expansion plans and several have actually gone bankrupt. New thin film products will ...

2012-12-05T23:59:59.000Z

313

High Performance Photovoltaic Project Overview  

DOE Green Energy (OSTI)

The High-Performance Photovoltaic (HiPerf PV) Project was initiated by the U.S. Department of Energy to substantially increase the viability of photovoltaics (PV) for cost-competitive applications so that PV can contribute significantly to our energy supply and environment in the 21st century. To accomplish this, the National Center for Photovoltaics (NCPV) directs in-house and subcontracted research in high-performance polycrystalline thin-film and multijunction concentrator devices. In this paper, we describe the recent research accomplishments in the in-house directed efforts and the research efforts under way in the subcontracted area.

Symko-Davies, M.; McConnell, R.

2005-01-01T23:59:59.000Z

314

CIS-based thin film PV technology. Phase 1 annual technical report, September 1995--September 1996  

DOE Green Energy (OSTI)

The primary objective of this subcontract is to establish reliable high-throughput, high-yield thin film deposition processes in order to make CIS a viable option for the next generation of photovoltaics. The primary goals for the project are to deliver a champion prototype 13% efficient large area module and to deliver sets of modules in 1-kW arrays composed of steadily increasing efficiency, reaching 1 kW of 12% efficient large-area modules by the end of the third year, demonstrating performance as well as commercial viability. The focus of the deliverables on large sets of high-performance modules reflects Siemens Solar Industries` commitment to demonstrating a reliable low-cost product. This document reports on progress from September 1995 through September 1996.

Tarrant, D.E.; Gay, R.R. [Siemens Solar Industries, Camarillo, CA (United States)

1997-04-01T23:59:59.000Z

315

XPS and UPS Studies of Thin Film PV Materials Modified by Reactions in Liquids  

DOE Green Energy (OSTI)

Water-based processing steps are ubiquitous in the semiconductor industry, and the field of photovoltaics (PV) is no exception. During chemical bath deposition (CBD) of CdS, complex chemical reactions occurring at surfaces and in solution are poorly understood, yet have been shown to have powerful effects on the performance in terms of reliability and efficiency of finished PV devices. In the past, electron spectroscopic studies of these reactions have been hampered by the conflicting requirements of ultra-high vacuum and exposure of samples to liquid water. In this paper we present initial results from a new tool at NREL that allows one to conduct atmospheric pressure, liquid phase chemical processes on thin film PV materials and subsequent examination via core and valence level electron spectroscopies without exposing samples to air contamination.

Perkins, C. L.; Hasoon, F. S.; Al-Thani, H. A.; Asher, S. E.

2005-01-01T23:59:59.000Z

316

Photovoltaic Cell Material Basics | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Material Basics Material Basics Photovoltaic Cell Material Basics August 19, 2013 - 4:43pm Addthis Although crystalline silicon cells are the most common type, photovoltaic (PV), or solar cells, can be made of many semiconductor materials. Each material has unique strengths and characteristics that influence its suitability for specific applications. For example, PV cell materials may differ based on their crystallinity, bandgap, absorbtion, and manufacturing complexity. Learn more about each of these characteristics below or learn about these solar cell materials: Silicon (Si)-including single-crystalline Si, multicrystalline Si, and amorphous Si Polycrystalline Thin Films-including copper indium diselenide (CIS), cadmium telluride (CdTe), and thin-film silicon Single-Crystalline Thin Films-including high-efficiency material

317

Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991  

DOE Green Energy (OSTI)

This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

Chu, T.L. [University of South Florida, Tampa, FL (United States)

1992-04-01T23:59:59.000Z

318

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

319

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

320

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

322

Low Temperature Chemical Vapor Deposition Of Thin Film Magnets  

DOE Patents (OSTI)

A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

Miller, Joel S. (Salt Lake City, UT); Pokhodnya, Kostyantyn I. (Salt Lake City, UT)

2003-12-09T23:59:59.000Z

323

Ultrafast laser ablation of gold thin film targets  

Science Conference Proceedings (OSTI)

Ultrafast laser ablation of a gold thin film is studied and compared with that of a bulk target, with particular emphasis given to the process of nanoparticles generation. The process is carried out in a condition where a single laser shot removes all the irradiated film spot. The experimental results evidence interesting differences and, in particular, a reduction of the nanoparticles size, and a narrowing of a factor two of their size distribution in the case of ablation of a thin film target, a feature which we relate to a more uniform heating of the target material. We thus show that ultrashort laser ablation of thin films provides a promising way of controlling plume features and nanoparticles size.

Amoruso, S.; Ausanio, G.; Bruzzese, R. [Dipartimento di Scienze Fisiche, Universita degli Studi di Napoli Federico II, Complesso Universitario di Monte S. Angelo, Via Cintia, I-80126 Napoli (Italy); CNR-SPIN, Complesso Universitario di Monte S. Angelo, Via Cintia, I-80126 Napoli (Italy); Nedyalkov, N. N.; Atanasov, P. A. [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsaridradsko shose Boulevard, Sofia 1784 (Bulgaria); Wang, X. [CNR-SPIN, Complesso Universitario di Monte S. Angelo, Via Cintia, I-80126 Napoli (Italy)

2011-12-15T23:59:59.000Z

324

Thin-film rechargeable lithium batteries for implantable devices  

DOE Green Energy (OSTI)

Thin films of LiCoO{sub 2} have been synthesized in which the strongest x-ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin-film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001 %/cycle or less. The reliability and performance of Li-LiCoO{sub 2} thin-film batteries make them attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.

Bates, J.b.; Dudney, N.J.

1997-05-01T23:59:59.000Z

325

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents (OSTI)

A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

Mitlitsky, Fred (Livermore, CA); Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Colella, Nicholas J. (Livermore, CA)

1998-02-03T23:59:59.000Z

326

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents (OSTI)

A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

1998-02-03T23:59:59.000Z

327

Effects of humidity during photoprocessing on thin film metallization adhesion  

SciTech Connect

Humidity effects during photoprocessing on tantalum/chromium/gold thin film networks (TFNs) were investigated. Humidity conditions at various process steps were controlled by placing either desiccant or water in handling containers for the TFNs. The TFNs photoprocessed in humid conditions had a much higher occurrence of metallization failures compared to TFNs processed in dry conditions. Ceramic surface defects were shown to cause pores in the thin films, and these pores enhanced corrosion susceptibility for the films. This study resulted in a desiccated storage process for production of TFNs.

Norwood, D.P.

1980-03-01T23:59:59.000Z

328

Method of improving field emission characteristics of diamond thin films  

DOE Patents (OSTI)

A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

Krauss, Alan R. (Naperville, IL); Gruen, Dieter M. (Downer Grove, IL)

1999-01-01T23:59:59.000Z

329

Integration of Self-Assembled Porous Alumina and Distributed Bragg Reflector for Light Trapping in Si Photovoltaic Devices  

E-Print Network (OSTI)

Light trapping is an important issue for thin film silicon photovoltaic cells due to the limited absorption coefficient for near infrared light. In this letter, we present a photonic structure that combines porous anodic ...

Sheng, Xing

330

Initiated chemical vapor deposition of polymeric thin films : mechanism and applications  

E-Print Network (OSTI)

Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness ...

Chan, Kelvin, Ph. D. Massachusetts Institute of Technology

2005-01-01T23:59:59.000Z

331

Characterization of LiNi?.?Mn?.?O? Thin Film Cathode Prepared by Pulsed Laser Deposition  

E-Print Network (OSTI)

LiNi?.?Mn?.?O? thin films have been grown by pulsed laser deposition (PLD) on stainless steel (SS) substrates. The crystallinity and structure of thin films were investigated by X-ray diffraction (XRD). Microstructure and ...

Xia, Hui

332

High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing  

E-Print Network (OSTI)

One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

333

Orientation of MgO thin films on Si(001) prepared by pulsed laser deposition  

E-Print Network (OSTI)

Pulsed laser deposition method was employed to grow MgO thin films with preferred orientation on bare Si(100) and SiO?/Si(100) substrates. The orientation of MgO thin films was systematically investigated by varying ...

Zhu, Tie-Jun

334

The development of a thin-film rollforming process for pharmaceutical continuous manufacturing  

E-Print Network (OSTI)

In this thesis, a continuous rollforming process for the folding of thin-films was proposed and studied as a key step in the continuous manufacturing of pharmaceutical tablets. HPMC and PEG based polymeric thin-films were ...

Slaughter, Ryan (Ryan R.)

2013-01-01T23:59:59.000Z

335

Thin-film multichip module packages for high-end IBM servers  

Science Conference Proceedings (OSTI)

A new generation of multilevel thin-film packages has been developed for IBM high-end S/390® and AS/400® systems. Thin-film structures in these packages are nonplanar and can be fabricated by either pattern electroplating ...

E. D. Perfecto; A. P. Giri; R. R. Shields; H. P. Longworth; J. R. Pennacchia; M. P. Jeanneret

1998-09-01T23:59:59.000Z

336

Photovoltaics Fact Sheet Harvard Green Campus Initiative  

E-Print Network (OSTI)

at Harvard (the Science Center PV). They provide turnkey services under a design/build contract. Solar DesignSolar Glass Fact Sheet Harvard Green Campus Initiative What is Solar Glass? Solar glass is a type of thin-film or building-integrated photovoltaic (PV) panel. It incorporates amorphous silicon (a type

Paulsson, Johan

337

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

DOE Green Energy (OSTI)

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

338

Development of Y-doped ZnO Thin Films via Novel Ink Jet Printing ...  

Science Conference Proceedings (OSTI)

Synthesis and Characterization of Plasma Polymerized Thin Films Deposited from Benzene and Hexamethyldisiloxane Using (PECVD) Method · Synthesis and ...

339

Some a priori estimates for a singular evolution equation arising in thin-film dynamics  

Science Conference Proceedings (OSTI)

Keywords: finite extinction time, global Harnack inequality, ill-posed problem, porous-medium equation, thin-film dynamics

Stephen H. Davis; Emmanuele DiBenedetto; David J. Diller

1996-05-01T23:59:59.000Z

340

Optimization of laser scribing for thin-film PV modules. Annual technical progress report, 12 April 1995--11 April 1996  

DOE Green Energy (OSTI)

One of the most important aspects in moving from the cell level to the integrated module level in thin-film photovoltaics is to achieve reliable and reproducible cell interconnects having low series resistance and high shunt resistance, and to do this with a minimum of dead area between cells. It is known that mechanical scribing often produces considerable damage (e.g., film tearing) surrounding the scribe. Laser scribing has shown the potential for superior scribe widths and profiles for many of the materials involved with thin-film PV. However, problems arc also known to occur with a heat-affected zone around the scribe, and for some materials and some focus conditions high positive ridges or collars are left along the scribe line. The commercially-available scribing systems have been optimized typically for other applications and other materials such as scribing of crystalline Si. Optimum operation for thin-film PV materials has been investigated by several PV manufacturers but there has been limited discussion of problems or of optimum parameters in the open literature. Furthermore, to our knowledge, there has been little investigation of the applicability, for thin-film PV, of laser systems other than the traditional cw lamp-pumped, Q-switched Nd:YAG.

Compaan, A.D.; Jayamaha, U.; Matulionis, I.; Miller, M.J. [Univ. of Toledo, OH (United States)

1996-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
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341

Time-Resolved Magnetic Flux and AC-Current Distributions in Superconducting YBCO Thin Films and  

E-Print Network (OSTI)

Time-Resolved Magnetic Flux and AC-Current Distributions in Superconducting YBCO Thin Films magnetic field. We study the interaction behavior of YBCO thin films in an ac transport current and a dc the calibrated field profiles. The current density evolution in YBCO thin films is studied by TRMOI as a function

Lewis, Robert Michael

342

Microwave plasma assisted supersonic gas jet deposition of thin film materials  

DOE Patents (OSTI)

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

Schmitt, III, Jerome J. (New Haven, CT); Halpern, Bret L. (Bethany, CT)

1993-01-01T23:59:59.000Z

343

Identification, Characterization, and Implications of Shadow Degradation in Thin Film Solar Cells  

E-Print Network (OSTI)

that the SD is a generic reliability concern for all thin film PV technologies, however, in this paper we, USA Abstract-- We describe a comprehensive study of intrinsic reliability issue arising from partial reliability concern for thin film solar cell. Keywords ­ Thin film solar cells, voltage stress, performance

Alam, Muhammad A.

344

Thin Films and the Systems-Driven Approach  

DOE Green Energy (OSTI)

A systems-driven approach is used to discern tradeoffs between cost and efficiency improvements for various thin-film module technologies and designs. Prospects for reduced system cost via such strategies are enhanced as balance-of-systems costs decline, and some strategies are identified for greater research focus.

Zweibel, K.

2005-01-01T23:59:59.000Z

345

Method for double-sided processing of thin film transistors  

DOE Patents (OSTI)

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Yuan, Hao-Chih (Madison, WI); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI); Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI)

2008-04-08T23:59:59.000Z

346

Front and backside processed thin film electronic devices  

DOE Patents (OSTI)

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Yuan, Hao-Chih (Madison, WI); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI); Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI)

2010-10-12T23:59:59.000Z

347

Method of preparing thin film polymeric gel electrolytes  

DOE Patents (OSTI)

Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

Derzon, Dora K. (Albuquerque, NM); Arnold, Jr., Charles (Albuquerque, NM)

1997-01-01T23:59:59.000Z

348

ITO Thin Films by RF Sputtering for Ethanol Sensing  

Science Conference Proceedings (OSTI)

The sensor for detection of ethanol vapours using RF sputter deposited ITO thin film on glass and Si substrates is reported. The principle of operation is the change of resistance of ITO film on exposure to ethanol vapours. The films were annealed at ... Keywords: Indium Tin Oxide, RF sputtering, ethanol sensor

Sudhir Chandra; H. J. Pandya; A. L. Vyas

2010-07-01T23:59:59.000Z

349

Avalanches through windows: Multiscale visualization in magnetic thin films  

E-Print Network (OSTI)

Avalanches through windows: Multiscale visualization in magnetic thin films Alessandro Magni dynamics, but are strongly dependent on the size of the windows chosen. Here we investigate how to properly sub-window of the entire sample. Usually, windows of varying sizes are used, and the distributions

Sethna, James P.

350

Front and backside processed thin film electronic devices  

Science Conference Proceedings (OSTI)

This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI); Yuan, Hao-Chih (Lakewood, CO); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI)

2012-01-03T23:59:59.000Z

351

Perovskite phase thin films and method of making  

DOE Patents (OSTI)

The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

Boyle, Timothy J. (Albuquerque, NM); Rodriguez, Mark A. (Albuquerque, NM)

2000-01-01T23:59:59.000Z

352

Electroplating of Cu(Ag) thin films for interconnect applications  

Science Conference Proceedings (OSTI)

Electromigration effects in interconnect metallizations cause a need for materials with superior resistance against electromigration failure but with adequate electrical properties. In principle, Cu(Ag) alloys are potential candidates to become an interconnect ... Keywords: Copper-silver alloy thin film, Electrochemical deposition, Interconnect material

S. Strehle; S. Menzel; J. W. Bartha; K. Wetzig

2010-02-01T23:59:59.000Z

353

Nanostructured thin films for solid oxide fuel cells  

E-Print Network (OSTI)

The goals of this work were to synthesize high performance perovskite based thin film solid oxide fuel cell (TF-SOFC) cathodes by pulsed laser deposition (PLD), to study the structural, electrical and electrochemical properties of these cathodes and to establish structure-property relations for these cathodes in order to further improve their properties and design new structures. Nanostructured cathode thin films with vertically-aligned nanopores (VANP) were processed using PLD. These VANP structures enhance the oxygen-gas phase diffusivity, thus improve the overall TF-SOFC performance. La0.5Sr0.5CoO3 (LSCO) and La0.4Sr0.6Co0.8Fe0.2O3 (LSCFO) were deposited on various substrates (YSZ, Si and pressed Ce0.9Gd0.1O1.95 (CGO) disks). Microstructures and properties of the nanostructured cathodes were characterized by transmission electron microscope (TEM), high resolution TEM (HRTEM), scanning electron microscope (SEM) and electrochemical impedance spectroscopy (EIS) measurements. A thin layer of vertically-aligned nanocomposite (VAN) structure was deposited in between the CGO electrolyte and the thin film LSCO cathode layer for TF-SOFCs. The VAN structure consists of the electrolyte and the cathode materials in the composition of (CGO) 0.5 (LSCO) 0.5. The self-assembled VAN nanostructures contain highly ordered alternating vertical columns formed through a one-step thin film deposition using a PLD technique. These VAN structures significantly increase the interface area between the electrolyte and the cathode as well as the area of active triple phase boundary (TPB), thus improving the overall TF-SOFC performance at low temperatures, as low as 400oC, demonstrated by EIS measurements. In addition, the binary VAN interlayer could act as the transition layer that improves the adhesion and relieves the thermal stress and lattice strain between the cathode and the electrolyte. The microstructural properties and growth mechanisms of CGO thin film prepared by PLD technique were investigated. Thin film CGO electrolytes with different grain sizes and crystal structures were prepared on single crystal YSZ substrates under different deposition conditions. The effect of the deposition conditions such as substrate temperature and laser ablation energy on the microstructural properties of these films are examined using XRD, TEM, SEM, and optical microscope. CGO thin film deposited above 500 ºC starts to show epitaxial growth on YSZ substrates. The present study suggests that substrate temperature significantly influences the microstructure of the films especially film grain size.

Yoon, Jongsik

2008-12-01T23:59:59.000Z

354

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells  

DOE Patents (OSTI)

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Ramanathan, Kannan V. (Lakewood, CA); Contreras, Miguel A. (Golden, CA); Bhattacharya, Raghu N. (Littleton, CA); Keane, James (Lakewood, CA); Noufi, Rommel (Golden, CA)

1999-01-01T23:59:59.000Z

355

Thin-film photovoltaic partnership -- CIS-based thin film PV technology: Final technical report, September 1995--December 1998  

DOE Green Energy (OSTI)

Siemens Solar Industries (SSI) achieved outstanding progress toward NREL/DOE goals during this subcontract. The statistical process control methodology was applied, and it demonstrated process reproducibility and yields for a 10-cm {times} 10-cm substrate size baseline process. Based on an understanding of the importance of materials of construction and the physical layout for absorber formation reactors, SSI designed and built a replacement large-area reactor based on a more direct scale-up of the baseline reactor. While designing and building the new large-area reactor, SSI defined and demonstrated new package designs to combine 10-cm {times} 30-cm circuit plates into one package; this allowed SSI to deliver large-area prototype modules to NREL for evaluation, and to introduce the first CIS-based products--5-watt (ST5) and 10-watt (ST10) modules. After completion of the new large-area reactor, all processes were scaled to a 30-cm {times} 120-cm plate size. Subsequently, only large 30-cm {times} 120-cm circuit plates were fabricated for 30-cm {times} 120-cm prototype modules or, after cutting the large circuit plates into smaller circuit plates, for the two new CIS-based products. The scaled process exhibits generally good control for extended periods with periodic shifts in the short-term process average that appears to result from batch-to-batch variability in precursor or base electrode preparation. Similarly, periodic shunting along the laser-scribed pattern lines in the Mo base electrode appears to result from batch-to-batch variability in base electrode preparation. Significant progress was made in understanding transient effects in CIS devices. Transient effects are important for many topics, including accelerated testing, process definition, measurement protocols, process predictability, interpretation of experimental test results, and understanding of device structures. Long-term outdoor stability of CIS continues to be demonstrated at NREL where 30-cm {times} 30-cm and 30-cm {times} 120-cm modules have undergone testing for more than ten years. SSI delivered two sets of upgraded modules for 1-kW arrays to the NREL Outdoor Test Facility. Improvements in efficiency and the temperature coefficient for power were demonstrated for these modules with sulfur incorporated to form a graded (Cu(In,Ga)(Se,S){sub 2}) absorber. The NREL-measured average module efficiency at standard test conditions is 11.4% for the second array, and the efficiency of all modules far exceeds the DOE year 2000 goal of 10% for commercial CIS modules. SSI demonstrated a succession of NREL-confirmed world-record efficiencies culminating in demonstration of an 11.8 %-efficient, large-area, 3,651-cm{sup 2} module.

Tarrant, D.E.; Gay, R.R.

1999-10-26T23:59:59.000Z

356

Photovoltaic Subcontract Program  

DOE Green Energy (OSTI)

This report summarizes the fiscal year (FY) 1992 progress of the subcontracted photovoltaic (PV) research and development (R D) performed under the Photovoltaic Advanced Research and Development Project at the National Renewable Energy Laboratory (NREL)-formerly the Solar Energy Research Institute (SERI). The mission of the national PV program is to develop PV technology for large-scale generation of economically competitive electric power in the United States. The technical sections of the report cover the main areas of the subcontract program: the Crystalline Materials and Advanced Concepts project, the Polycrystalline Thin Films project, Amorphous Silicon Research project, the Photovoltaic Manufacturing Technology (PVMaT) project, PV Module and System Performance and Engineering project, and the PV Analysis and Applications Development project. Technical summaries of each of the subcontracted programs provide a discussion of approaches, major accomplishments in FY 1992, and future research directions.

Not Available

1993-03-01T23:59:59.000Z

357

Categorical Exclusion Determinations: Office of Energy Efficiency...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Categorical Exclusion Determination Prototyping and Development of Commercial Nano-Crystalline and Thin Film Silicon for Photovoltaic Manufacturing CX(s) Applied: A9,...

358

Page not found | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Categorical Exclusion Determination Prototyping and Development of Commercial Nano-Crystalline and Thin Film Silicon for Photovoltaic Manufacturing CX(s) Applied: A9,...

359

Research on advanced photovoltaic manufacturing technology  

DOE Green Energy (OSTI)

This report outlines opportunities for significantly advancing the scale and economy of high-volume manufacturing of high-efficiency photovoltaic (PV) modules. We propose to pursue a concurrent effort to advance existing crystalline silicon module manufacturing technology and to implement thin film CuInSe{sub 2} (CIS) module manufacturing. This combination of commercial-scale manufacturing of high-efficiency crystalline silicon modules and of pilot-scale manufacturing of low-cost thin film CIS technology will support continued, rapid growth of the US PV industry.

Jester, T.; Eberspacher, C. (Siemens Solar Industries, Camarillo, CA (United States))

1991-11-01T23:59:59.000Z

360

Institute of Photo Electronic Thin Film Devices and Technology of Nankai  

Open Energy Info (EERE)

Electronic Thin Film Devices and Technology of Nankai Electronic Thin Film Devices and Technology of Nankai University Jump to: navigation, search Name Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University Place Tianjin Municipality, China Zip 300071 Sector Solar Product A thin-film solar cell research institute in China. References Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University is a company located in Tianjin Municipality, China . References ↑ "Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University"

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

Mickelsen, R.A.; Chen, W.S.

1985-08-13T23:59:59.000Z

362

Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (1) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI[sub 2] chalcopyrite ternary materials which is vacuum deposited in a thin composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns ([approx equal]2.5[mu]m to [approx equal]5.0[mu]m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (2), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, is allowed.

Mickelsen, R.A.; Chen, W.S.

1982-06-15T23:59:59.000Z

363

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

1985-01-01T23:59:59.000Z

364

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

1982-01-01T23:59:59.000Z

365

Photovoltaic Materials  

Science Conference Proceedings (OSTI)

The goal of the current project was to help make the US solar industry a world leader in the manufacture of thin film photovoltaics. The overall approach was to leverage ORNL’s unique characterization and processing technologies to gain a better understanding of the fundamental challenges for solar cell processing and apply that knowledge to targeted projects with industry members. ORNL has the capabilities in place and the expertise required to understand how basic material properties including defects, impurities, and grain boundaries affect the solar cell performance. ORNL also has unique processing capabilities to optimize the manufacturing process for fabrication of high efficiency and low cost solar cells. ORNL recently established the Center for Advanced Thin-film Systems (CATS), which contains a suite of optical and electrical characterization equipment specifically focused on solar cell research. Under this project, ORNL made these facilities available to industrial partners who were interested in pursuing collaborative research toward the improvement of their product or manufacturing process. Four specific projects were pursued with industrial partners: Global Solar Energy is a solar industry leader in full scale production manufacturing highly-efficient Copper Indium Gallium diSelenide (CIGS) thin film solar material, cells and products. ORNL worked with GSE to develop a scalable, non-vacuum, solution technique to deposit amorphous or nanocrystalline conducting barrier layers on untextured stainless steel substrates for fabricating high efficiency flexible CIGS PV. Ferro Corporation’s Electronic, Color and Glass Materials (“ECGM”) business unit is currently the world’s largest supplier of metallic contact materials in the crystalline solar cell marketplace. Ferro’s ECGM business unit has been the world's leading supplier of thick film metal pastes to the crystalline silicon PV industry for more than 30 years, and has had operational cells and modules in the field for 25 years. Under this project, Ferro leveraged world leading analytical capabilities at ORNL to characterize the paste-to-silicon interface microstructure and develop high efficiency next generation contact pastes. Ampulse Corporation is developing a revolutionary crystalline-silicon (c-Si) thin-film solar photovoltaic (PV) technology. Utilizing uniquely-textured substrates and buffer materials from the Oak Ridge National Laboratory (ORNL), and breakthroughs in Hot-Wire Chemical Vapor Deposition (HW-CVD) techniques in epitaxial silicon developed at the National Renewable Energy Laboratory (NREL), Ampulse is creating a solar technology that is tunable in silicon thickness, and hence in efficiency and economics, to meet the specific requirements of multiple solar PV applications. This project focused on the development of a high rate deposition process to deposit Si, Ge, and Si1-xGex films as an alternate to hot-wire CVD. Mossey Creek Solar is a start-up company with great expertise in the solar field. The primary interest is to create and preserve jobs in the solar sector by developing high-yield, low-cost, high-efficiency solar cells using MSC-patented and -proprietary technologies. The specific goal of this project was to produce large grain formation in thin, net-shape-thickness mc-Si wafers processed with high-purity silicon powder and ORNL's plasma arc lamp melting without introducing impurities that compromise absorption coefficient and carrier lifetime. As part of this project, ORNL also added specific pieces of equipment to enhance our ability to provide unique insight for the solar industry. These capabilities include a moisture barrier measurement system, a combined physical vapor deposition and sputtering system dedicated to cadmium-containing deposits, adeep level transient spectroscopy system useful for identifying defects, an integrating sphere photoluminescence system, and a high-speed ink jet printing system. These tools were combined with others to study the effect of defects on the performance of crystalline silicon and

Duty, C.; Angelini, J.; Armstrong, B.; Bennett, C.; Evans, B.; Jellison, G. E.; Joshi, P.; List, F.; Paranthaman, P.; Parish, C.; Wereszczak, A.

2012-10-15T23:59:59.000Z

366

High-Efficiency CdTe and CIGS Thin-Film Solar Cells: Highlights and Challenges  

Science Conference Proceedings (OSTI)

Thin-film photovoltaic (PV) modules of CdTe and Cu(In,Ga)Se{sub 2} (CIGS) have the potential to reach cost-effective PV-generated electricity. These technologies have transitioned from the laboratory to the market place. Pilot production and first-time manufacturing are ramping up to higher capacity and enjoying a flood of venture-capital funding. CIGS solar cells and modules have achieved 19.5% and 13% efficiencies, respectively. Likewise, CdTe cells and modules have reached 16.5% and 10.2% efficiencies, respectively. Even higher efficiencies from the laboratory and from the manufacturing line are only a matter of time. Manufacturing-line yield continues to improve and is surpassing 85%. Long-term stability has been demonstrated for both technologies; however, some failures in the field have also been observed, emphasizing the critical need for understanding degradation mechanisms and packaging options. These two thin-film technologies have a common device/module structure: substrate, base electrode, absorber, junction layer, top electrode, patterning steps for monolithic integration, and encapsulation. The monolithic integration of thin-film solar cells can lead to significant manufacturing cost reduction compared to crystalline Si technology. The CdTe and CIGS modules share common structural elements. In principle, this commonality should lead to similar manufacturing cost per unit area, and thus, the module efficiency becomes the discriminating factor that determines the cost per watt. The long-term potential of the two technologies require R&D emphasis on science and engineering-based challenges to find solutions to achieve targeted cost-effective module performance, and in-field durability. Some of the challenges are common to both, e.g., in-situ process control and diagnostics, thinner absorber, understanding degradation mechanisms, protection from water vapor, and innovation in high-speed processing and module design. Other topics are specific to the technology, such as lower-cost and fast-deposition processes for CIGS, and improved back contact and voltage for CdTe devices.

Noufi, R.; Zweibel, K.

2006-01-01T23:59:59.000Z

367

Thin film transistors and solar cells. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search  

Science Conference Proceedings (OSTI)

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 250 citations and includes a subject term index and title list.)

NONE

1995-01-01T23:59:59.000Z

368

Thin film transistors and solar cells. (Latest citations from the US Patent Bibliographic File with Exemplary Claims). Published Search  

SciTech Connect

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 250 citations and includes a subject term index and title list.)

Not Available

1993-11-01T23:59:59.000Z

369

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making  

DOE Patents (OSTI)

A photovoltaic device is disclosed having a substrate, a layer of Cd[sub 2]SnO[sub 4] disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd[sub 2]SnO[sub 4], and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd[sub 2]SnO[sub 4] layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd[sub 2]SnO[sub 4], and depositing an electrically conductive film onto the thin film of semiconductor materials. 10 figs.

Wu, X.; Coutts, T.J.; Sheldon, P.; Rose, D.H.

1999-07-13T23:59:59.000Z

370

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making  

DOE Patents (OSTI)

A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd.sub.2 SnO.sub.4, and depositing an electrically conductive film onto the thin film of semiconductor materials.

Wu, Xuanzhi (Golden, CO); Coutts, Timothy J. (Lakewood, CO); Sheldon, Peter (Lakewood, CO); Rose, Douglas H. (Golden, CO)

1999-01-01T23:59:59.000Z

371

THIN FILM LITHIUM-BASED BATTERIES AND ELECTROCHROMIC DEVICES ...  

Building Energy Efficiency; Electricity Transmission; ... Hydropower, Wave and Tidal; Industrial Technologies; Solar Photovoltaic; Solar Thermal; ...

372

High-Performance Photovoltaic Project: Identifying Critical Pathways; Kickoff Meeting  

DOE Green Energy (OSTI)

The High Performance Photovoltaic Project held a Kickoff Meeting in October, 2001. This booklet contains the presentations given by subcontractors and in-house teams at that meeting. The areas of subcontracted research under the HiPer project include Polycrystalline Thin Films and Multijunction Concentrators. The in-house teams in this initiative will focus on three areas: (1) High-Performance Thin-Film Team-leads the investigation of tandem structures and low-flux concentrators, (2) High-Efficiency Concepts and Concentrators Team-an expansion of an existing team that leads the development of high-flux concentrators, and (3) Thin-Film Process Integration Team-will perform fundamental process and characterization research, to resolve the complex issues of making thin-film multijunction devices.

Symko-Davis, M.

2001-11-07T23:59:59.000Z

373

Development of high-efficiency, thin-film CdTe solar cells. Annual subcontract report, January 1, 1993--December 31, 1993  

DOE Green Energy (OSTI)

Polycrystalline thin film CdTe solar cells are one of the leading candidates for terrestrial photovoltaic applications. Theoretical calculations project an efficiency of 27% for single crystal, single junction CdTe cells, and the practically achievable efficiency for polycrystalline CdTe cells is 18-20%. Polycrystalline CdTe cells made by different groups show a significant variation in short circuit currents, open circuit voltages, and cell efficiencies. A better understanding of carrier loss and transport mechanism is crucial for explaining these differences, improving the yield, and bridging the gap between current and practically achievable limits in CdTe cell efficiencies. The goal of this program is to improve the understanding of the loss mechanisms in thin film CdS/CdTe solar cells and to improve their efficiency by characterizing the properties of the films as well as the finished devices.

Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Institute of Technology, Atlanta, GA (United States)

1994-09-01T23:59:59.000Z

374

Canrom Photovoltaics Inc | Open Energy Information  

Open Energy Info (EERE)

Canrom Photovoltaics Inc Canrom Photovoltaics Inc Jump to: navigation, search Name Canrom Photovoltaics Inc Place Niagara Falls, New York Zip 14305 Sector Solar Product Developer of a thin-film CdTe based solar electric module. References Canrom Photovoltaics Inc[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Canrom Photovoltaics Inc is a company located in Niagara Falls, New York . References ↑ "Canrom Photovoltaics Inc" Retrieved from "http://en.openei.org/w/index.php?title=Canrom_Photovoltaics_Inc&oldid=343203" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version Permanent link Browse properties

375

Pulsed laser processing of high temperature superconducting thin films  

SciTech Connect

Systematic studies of the effects of pulsed laser deposition processing parameters on plume dynamics and resultant film properties have been performed. Plume angular distributions, cos{sup m}({theta}), were observed to be variable between 1 > m > 10 depending on laser energy density and spot size. Under optimized conditions, epitaxial, superconducting thin films could be grown in-situ on a variety of single-crystal substrates. High quality, 200 nm thick films were obtained at deposition rates approaching 15 nm/sec. Additionally, the patterning of YBa{sub 2}Cu{sub 3}O{sub 7-x} thin films has been achieved by a process which combines thermal oxygen diffusion and laser annealing. This process is performed under relatively mild conditions which allows the structural integrity of the films to be preserved. 9 refs., 6 figs.

Muenchausen, R.E.; Dye, R.C.; Estler, R.C.; Foltyn, S.; Garcia, A.R.; Hubbard, K.M.; Nogar, N.S.; Wu, X.D. (Los Alamos National Lab., NM (USA)); Carim, A.; Mukherjee, A.; Brueck, S.R.J. (New Mexico Univ., Albuquerque, NM (USA))

1990-01-01T23:59:59.000Z

376

Characterization of Thin Films by XAFS: Application to Spintronics Materials  

SciTech Connect

X-ray absorption fine structure (XAFS) has proven very valuable in characterizing thin films. This is illustrated with some examples from the area of diluted magnetic semiconductor (DMS) materials for spintronics applications. A promising route to DMS materials is doping of oxides such as TiO2 and ZnO with magnetic atoms such as Co. These can be grown as epitaxial thin films on various substrates. XAFS is especially valuable for characterizing the dopant atoms. The near edge region is sensitive to the symmetry of the bonding and valence of the dopants, and the extended XAFS can determine the details of the lattice site. XAFS is also valuable for detecting metallic nanoparticles. These can be difficult to detect by other methods, and can give a spurious magnetic signal. The power of XAFS is illustrated by examples from studies on Co doped ZnO films.

Heald, Steve M.; Kaspar, Tiffany C.; Droubay, Timothy; Chambers, Scott A.

2009-10-25T23:59:59.000Z

377

Engineering Thin-Film Oxide Interfaces | Advanced Photon Source  

NLE Websites -- All DOE Office Websites (Extended Search)

Novel Materials Become Multifunctional at the Ultimate Quantum Limit Novel Materials Become Multifunctional at the Ultimate Quantum Limit Outsmarting Flu Viruses How Lead-Free Solder (Mis)Behaves under Stress Dynamics of Polymer Chains Atop Different Materials Priming the Pump in the Fight against Drug-Resistant Tuberculosis Science Highlights Archives: 2013 | 2012 | 2011 | 2010 2009 | 2008 | 2007 | 2006 2005 | 2004 | 2003 | 2002 2001 | 2000 | 1998 | Subscribe to APS Science Highlights rss feed Engineering Thin-Film Oxide Interfaces NOVEMBER 12, 2012 Bookmark and Share LAO thin films on STO substrates are depicted in the top schematics (LAO indicated by blue spheres, STO by green spheres). The top left-hand panel demonstrates a chemically broad interface resulting from conventional growth in a low pressure oxygen environment. In contrast, the top

378

Method for formation of thin film transistors on plastic substrates  

DOE Patents (OSTI)

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

1998-10-06T23:59:59.000Z

379

Thin film battery and method for making same  

DOE Patents (OSTI)

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode. Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between [minus]15 C and 150 C. 9 figs.

Bates, J.B.; Dudney, N.J.; Gruzalski, G.R.; Luck, C.F.

1994-08-16T23:59:59.000Z

380

Electronic processes in thin-film PV materials. Final report  

DOE Green Energy (OSTI)

The electronic and optical processes in an important class of thin-film PV materials, hydrogenated amorphous silicon (a-Si:H) and related alloys, have been investigated using several experimental techniques designed for thin-film geometries. The experimental techniques include various magnetic resonance and optical spectroscopies and combinations of these two spectroscopies. Two-step optical excitation processes through the manifold of silicon dangling bond states have been identifies as important at low excitation energies. Local hydrogen motion has been studied using nuclear magnetic resonance techniques and found to be much more rapid than long range diffusion as measured by secondary ion mass spectroscopy. A new metastable effect has been found in a-Si:H films alloyed with sulfur. Spin-one optically excited states have been unambiguously identified using optically detected electron spin resonance. Local hydrogen bonding in microcrystalline silicon films has been studied using NMR.

Taylor, P.C.; Chen, D.; Chen, S.L. [and others

1998-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Eddy Current Testing for Detecting Small Defects in Thin Films  

SciTech Connect

Presented here is a technique of using Eddy Current based Giant Magneto-Resistance sensor (GMR) to detect surface and sub-layered minute defects in thin films. For surface crack detection, a measurement was performed on a copper metallization of 5-10 microns thick. It was done by scanning the GMR sensor on the surface of the wafer that had two scratches of 0.2 mm, and 2.5 mm in length respectively. In another experiment, metal coatings were deposited over the layers containing five defects with known lengths such that the defects were invisible from the surface. The limit of detection (resolution), in terms of defect size, of the GMR high-resolution Eddy Current probe was studied using this sample. Applications of Eddy Current testing include detecting defects in thin film metallic layers, and quality control of metallization layers on silicon wafers for integrated circuits manufacturing.

Obeid, Simon; Tranjan, Farid M. [Electrical and Computer Engineering Department, UNCC (United States); Dogaru, Teodor [Albany Instruments, 426-O Barton Creek, Charlotte, NC 28262 (United States)

2007-03-21T23:59:59.000Z

382

Thin film battery and method for making same  

SciTech Connect

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

Bates, John B. (Oak Ridge, TN); Dudney, Nancy J. (Knoxville, TN); Gruzalski, Greg R. (Oak Ridge, TN); Luck, Christopher F. (Knoxville, TN)

1994-01-01T23:59:59.000Z

383

Effects of acetylacetone additions on PZT thin film processing  

SciTech Connect

Sol-gel processing methods are frequently used for the fabrication of lead zirconate titanate (PZT) thin films for many electronic applications. Our standard approach for film fabrication utilizes lead acetate and acetic acid modified metal alkoxides of zirconium and titanium in the preparation of our precursor solutions. This report highlights some of our recent results on the effects of the addition of a second chelating ligand, acetylacetone, to this process. The authors discuss the changes in film drying behavior, densification and ceramic microstructure which accompany acetylacetone additions to the precursor solution and relate the observed variations in processing behavior to differences in chemical precursor structure induced by the acetylacetone ligand. Improvements in thin film microstructure, ferroelectric and optical properties are observed when acetylacetone is added to the precursor solution.

Schwartz, R.W.; Assink, R.A.; Dimos, D.; Sinclair, M.B.; Boyle, T.J.; Buchheit, C.D.

1995-02-01T23:59:59.000Z

384

Experimental thin film deposition and surface analysis techniques  

DOE Green Energy (OSTI)

An attempt has been made to present some of the thin-film deposition and surface analysis techniques which may be useful in growing superionic conducting materials. Emphasis is made on the importance of being careful in selecting process parameters and materials in order to produce films with properties outlined in this article. Also, special care should be given to proper consideration of grain boundary effects.

Collins, W.E.; Rambabu, B.

1986-01-01T23:59:59.000Z

385

Preparation of redox polymer cathodes for thin film rechargeable batteries  

DOE Patents (OSTI)

The present invention relates to the manufacture of thin film solid state electrochemical devices using composite cathodes comprising a redox polymer capable of undergoing oxidation and reduction, a polymer solid electrolyte and conducting carbon. The polymeric cathode material is formed as a composite of radiation crosslinked polymer electrolytes and radiation crosslinked redox polymers based on polysiloxane backbones with attached organosulfur side groups capable of forming sulfur-sulfur bonds during electrochemical oxidation.

Skotheim, T.A.; Lee, H.S.; Okamoto, Yoshiyuki.

1994-11-08T23:59:59.000Z

386

Growth and Characterization of Epitaxial Oxide Thin Films  

E-Print Network (OSTI)

of these morphological changes was found to be dependent on a number of factors including deposition rates, flux and energy of bombarding ions, and the average angle of incidence of Glow Discharge Glow Discharge -V (DC) Cathode (Target) Insulation Substrates Anode Vacuum... techniques such as reflected high energy electron diffraction (RHEED) and low energy electron diffraction (LEED) can give valuable information about the initial growth mechanisms and surface structure of the very thin films during growth in an in-situ manner...

Garg, Ashish

387

Optical sensors and multisensor arrays containing thin film electroluminescent devices  

DOE Patents (OSTI)

Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.

Aylott, Jonathan W. (Ann Arbor, MI); Chen-Esterlit, Zoe (Ann Arbor, MI); Friedl, Jon H. (Ames, IA); Kopelman, Raoul (Ann Arbor, MI); Savvateev, Vadim N. (Ames, IA); Shinar, Joseph (Ames, IA)

2001-12-18T23:59:59.000Z

388

Substrates suitable for deposition of superconducting thin films  

DOE Patents (OSTI)

A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

Feenstra, Roeland (Oak Ridge, TN); Boatner, Lynn A. (Oak Ridge, TN)

1993-01-01T23:59:59.000Z

389

Hysteresis in Thin-Film Rechargeable Lithium Batteries  

SciTech Connect

Discharge - charge cycling of thin-film rechargeable lithium batteries with an amorphous or nanocrystalline LiXMn2.Y04 cathode reveals evidence for a true hysteresis in the lithium insertion reaction. This is compared with an apparent hysteresis attributed to a kinetically hindered phase transition near 3 V for batteries with either a crystalline or a nanocrystalline LiJ@Yo4 cathode.

Bates, J.B.; Dudney, N.J.; Evans, C.D.; Hart, F.X.

1999-04-25T23:59:59.000Z

390

Fabrication and testing of thermoelectric thin film devices  

DOE Green Energy (OSTI)

Two thin-film thermoelectric devices are experimentally demonstrated. The relevant thermal loads on the cold junction of these devices are determined. The analytical form of the equation that describes the thermal loading of the device enables one to model the performance based on the independently measured electronic properties of the films forming the devices. This model elucidates which parameters determine device performance, and how they can be used to maximize performance.

Wagner, A.V.; Foreman, R.J.; Summers, L.J.; Barbee, T.W. Jr.; Farmer, J.C. [Lawrence Livermore National Lab., CA (United States). Chemistry and Materials Science Dept.

1996-03-01T23:59:59.000Z

391

Formation of thin-film resistors on silicon substrates  

DOE Patents (OSTI)

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

1988-11-01T23:59:59.000Z

392

Real Time Optics of the Growth of Textured Silicon Films in Photovoltaics: Final Technical Report, 1 August 1999--12 August 2002  

DOE Green Energy (OSTI)

Novel optical instruments, including single and dual rotating-compensator multichannel ellipsometers, have been designed and developed to probe the evolution of the microstructure, spectroscopic optical properties, and other materials characteristics during the fabrication and processing of individual thin films and thin-film structures used in photovoltaic devices. These instruments provide a foundation for next-generation process design/control and metrology in existing and future photovoltaics technologies. In this project, the materials system studied in the greatest detail was thin-film silicon, fabricated at low temperatures by plasma-enhanced chemical vapor deposition. Real-time measurements of such thin films by multichannel ellipsometry have established deposition phase diagrams that provide guiding principles for multistep fabrication of high-performance amorphous (a-Si:H) and microcrystalline (mc-Si:H) solar cells. Such phase diagrams have also served to disprove conventional wisdom in the fabrication of thin-film solar cell structures, thus avoiding future unproductive research efforts.

Collins, R. W.; Wronski, C. R.

2003-10-01T23:59:59.000Z

393

Geometric shape control of thin film ferroelectrics and resulting structures  

DOE Patents (OSTI)

A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

394

Highly dispersed carbon nanotubes in organic media for polymer:fullerene photovoltaic devices  

E-Print Network (OSTI)

Highly dispersed carbon nanotubes in organic media for polymer:fullerene photovoltaic devices Gwang photovoltaic device are fabricated using homogeneously dispersed carbon nanotubes (CNTs) in a polymer and by the fabrica- tion of an organic thin film transistor. An organic solar cell was fabricated from these com

Hong, Soon Hyung

395

A large polarization in Ce-modified bismuth ferrite thin films  

Science Conference Proceedings (OSTI)

Bi{sub 0.95}Ce{sub 0.05}FeO{sub 3} (BCFO) thin films were grown on SrRuO{sub 3}/TiO{sub 2}/SiO{sub 2}/Si(100) substrates via radio frequency sputtering. The BCFO thin film has a (111) orientation with a high phase purity. Improved dielectric behavior is observed for the BCFO thin film as compared with that of pure bismuth ferrite thin film. A large remanent polarization of 2P{sub r} {approx} 183.9 {mu}C/cm{sup 2} is induced in the BCFO thin film, owing to the (111) orientation and the introduction of Ce. The local phase decomposition induced by larger depolarization fields and the oxygen vacancies dominates the fatigue resistance of the BCFO thin film.

Wang Yuanyu [College of Materials Science and Metallurgy Engineering, Guizhou University, Guiyang 550003 (China)

2011-06-15T23:59:59.000Z

396

SunShot Initiative: Photovoltaics Research and Development  

NLE Websites -- All DOE Office Websites (Extended Search)

Research and Research and Development to someone by E-mail Share SunShot Initiative: Photovoltaics Research and Development on Facebook Tweet about SunShot Initiative: Photovoltaics Research and Development on Twitter Bookmark SunShot Initiative: Photovoltaics Research and Development on Google Bookmark SunShot Initiative: Photovoltaics Research and Development on Delicious Rank SunShot Initiative: Photovoltaics Research and Development on Digg Find More places to share SunShot Initiative: Photovoltaics Research and Development on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Photovoltaics Research and Development

397

Microwave plasma assisted supersonic gas jet deposition of thin film materials  

DOE Patents (OSTI)

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

Schmitt, J.J. III; Halpern, B.L.

1993-10-26T23:59:59.000Z

398

Deployable telescope having a thin-film mirror and metering structure  

Science Conference Proceedings (OSTI)

A deployable thin-film mirror telescope comprises a base structure and a metering structure. The base structure houses a thin-film mirror, which can be rolled for stowage and unrolled for deployment. The metering structure is coupled to the base structure and can be folded for stowage and unfolded for deployment. In the deployed state, the unrolled thin-film mirror forms a primary minor for the telescope and the unfolded metering structure positions a secondary minor for the telescope.

Krumel, Leslie J. (Cedar Crest, NM); Martin, Jeffrey W. (Albuquerque, NM)

2010-08-24T23:59:59.000Z

399

Phase identification and control of thin films deposited by co-evaporation of elemental Cu, Zn, Sn, and Se  

Science Conference Proceedings (OSTI)

Kesterite thin films [(i.e., Cu{sub 2}ZnSn(S,Se){sub 4} and related alloys] have been the subject of recent interest for use as an absorber layer for thin film photovoltaics due to their high absorption coefficient (>10{sup 4} cm{sup -1}), their similarity to successful chalcopyrites (like CuInxGa{sub 1-x}Se{sub 2}) in structure, and their earth-abundance. The process window for growing a single-phase kesterite film is narrow. In this work, we have documented, for our 9.15%-efficient kesterite co-evaporation process, (1) how appearance of certain undesirable phases are controlled via choice of processing conditions, (2) several techniques for identification of phases in these films with resolution adequate to discern changes that are important to device performance, and (3) reference measurements for those performing such phase identification. Data from x-ray diffraction, x-ray fluorescence, Raman scattering, scanning electron microscopy, energy dispersive spectroscopy, and current-voltage characterization are presented.

Vora, Nirav; Blackburn, Jeffrey; Repins, Ingrid; Beall, Carolyn; To, Bobby; Pankow, Joel; Teeter, Glenn; Young, Matthew; Noufi, Rommel [National Renewable Energy Laboratory, 1617 Cole Blvd., MS 3219, Golden, Colorado 80401 (United States)

2012-09-15T23:59:59.000Z

400

Phase Identification and Control of Thin Films Deposited by Co-Evaporation of Elemental Cu, Zn, Sn, and Se  

Science Conference Proceedings (OSTI)

Kesterite thin films (i.e., Cu{sub 2}ZnSn(S,Se){sub 4} and related alloys) have been the subject of recent interest for use as an absorber layer for thin film photovoltaics due to their high absorption coefficient (> 10{sup 4} cm{sup -1}), their similarity to successful chalcopyrites (like CuInxGa{sub 1-x}Se{sub 2}) in structure, and their earth-abundance. The process window for growing a single-phase kesterite film is narrow. In this work, we have documented, for our 9.15%-efficient kesterite co-evaporation process, (1) how appearance of certain undesirable phases are controlled via choice of processing conditions, (2) several techniques for identification of phases in these films with resolution adequate to discern changes that are important to device performance, and (3) reference measurements for those performing such phase identification. Data from x-ray diffraction, x-ray fluorescence, Raman scattering, scanning electron microscopy, energy dispersive spectroscopy, and current-voltage characterization are presented.

Vora, N.; Blackburn, J.; Repins, I.; Beall, C.; To, B.; Pankow, J.; Teeter, G.; Young, M.; Noufi, R.

2012-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Effect of Heat Treatment on Cyclic Fatigue Properties of Thin Films of ...  

Science Conference Proceedings (OSTI)

Abstract Scope, Mobile devices, such as cellphones, notebook and tablet computers, have become daily necessities. Small switches made from thin films of ...

402

The Effects of Interfaces on the Ultrafast Irradiation of Thin Films  

Science Conference Proceedings (OSTI)

Presentation Title, The Effects of Interfaces on the Ultrafast Irradiation of Thin Films ... Abstract Scope, The ultrafast laser irradiation of bulk materials is a ...

403

Effects of Different Precursor's Concentration on the Properties of Zinc Oxide Thin Films  

Science Conference Proceedings (OSTI)

Zinc oxide (ZnO) thin films were successfully grown on silicon substrate with different molarities, by a sol-gel method. In the process, the molarities were varied from 0.2-1.0 M and it was found that increasing in molarities had affected the structure of ZnO thin films. The properties of the thin films were characterized and studied by ultraviolet-visible spectroscopy (UV-Vis) and photoluminescence spectrometer (PL). It was found that the molarities affect the optical properties of the resultant ZnO thin films.

Malek, M. F.; Zakaria, N.; Sahdan, M. Z.; Mamat, M. H. [Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Khusaimi, Z. [NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Rusop, M. [Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)

2010-07-07T23:59:59.000Z

404

Electrochemical kinetics of thin film vanadium pentoxide cathodes for lithium batteries  

E-Print Network (OSTI)

Electrochemical experiments were performed to investigate the processing-property-performance relations of thin film vanadium pentoxide cathodes used in lithium batteries. Variations in microstructures were achieved via ...

Mui, Simon C., 1976-

2005-01-01T23:59:59.000Z

405

Thin-Film Fiber Optic Sensors for Power Control and Fault Detection. Final Report  

Science Conference Proceedings (OSTI)

Described is the development of an optical current measurement device, an active power conditioning system, and sol gel type thin films for the detection of magnetic fields.

Duncan, Paul Grems

2003-09-30T23:59:59.000Z

406

Highly Transparent and Conducting ALD of Doped ZnO Thin Films ...  

Science Conference Proceedings (OSTI)

... and Conducting ALD of Doped ZnO Thin Films for TCO Applications · Hybrid Aerogel/Nanorod Functional Materials for Energy and Sensing Applications.

407

Stress Management: X-Rays Reveal Si Thin-Film Defects  

Science Conference Proceedings (OSTI)

Stress Management: X-Rays Reveal Si Thin-Film Defects. ... Advanced Photon Source, and supported in part by the Department of Energy. ...

2011-04-26T23:59:59.000Z

408

Design Method for Light Absorption Enhancement in Ultra-Thin Film ...  

Science Conference Proceedings (OSTI)

ultra-thin film organic solar cells (OSCs) to improve the light absorption. ... In the promising field of solar cells, organic solar cells (OSCs) are advantageous in its ...

409

Minutes of the 2007 Spring Meeting TMS Thin Films and Interfaces ...  

Science Conference Proceedings (OSTI)

Minutes of the 2007 Spring Meeting. TMS Thin Films and Interfaces Committee. Orlando, FL. February 25, 2007. 3:00-4:00 pm. Present: DP Field (Washington ...

410

N-1: Use of Nanostructured Sn Thin Film Anodes for Lithium Ion ...  

Science Conference Proceedings (OSTI)

XRD analyses proved that the thin film was made of nano crystalline Sn particles. The galvanostatic charge discharge results showed that the nano porous Sn ...

411

The Role of Line Defects on the Conductivity of Thin-film Yttria ...  

Science Conference Proceedings (OSTI)

Presentation Title, The Role of Line Defects on the Conductivity of Thin-film Yttria- stabilized Zirconia. Author(s), Edmund Mills, Nigel Browning, Yayoi Takamura, ...

412

Titanium Oxides Thin Film Anodes for All-Solid-State Lithium Ion ...  

Science Conference Proceedings (OSTI)

Metallic lithium is not a suitable anode material for all-solid-state thin film batteries ... Application of Biomass Waste Materials in the Nano Mineral Synthesis.

413

Aging phenomena in PMMA thin films -- memory and rejuvenation effects  

E-Print Network (OSTI)

Aging dynamics in thin films of poly(methyl methacrylate) (PMMA) have been investigated through dielectric measurements for different types of aging processes. The dielectric constant was found to decrease with increasing aging time at an aging temperature in many cases. An increase in the dielectric constant was also observed in the long time region ($\\ge$11h) near the glass transition temperature for thin films with thickness less than 26nm. In the constant rate mode including a temporary stop at a temperature $T_a$, the memory of the aging at $T_a$ was found to be kept and then to be recalled during the subsequent heating process. In the negative temperature cycling process, a strong rejuvenation effect has been observed after the temperature shift from the initial temperature $T_1$ to the second temperature $T_2$($=T_1+\\Delta T$) when $\\Delta T\\approx -20$K. Furthermore, a full memory effect has also been observed for the temperature shift from $T_2$ to $T_1$. This suggests that the aging at $T_1$ is totally independent of that at $T_2$ for $\\Delta T\\approx -20$K. As $|\\Delta T|$ decreases, the independence of the aging between the two temperatures was found to be weaken, $i.e.,$ the effective time, which is a measure of the contribution of the aging at $T_1$ to that at $T_2$, is a decreasing function of $|\\Delta T|$ in the negative region of $\\Delta T$. As the film thickness decreases from 514nm to 26nm, the $|\\Delta T|$ dependence of the effective time was found to become much stronger. The contribution of the aging at $T_2$ to that at $T_1$ disappears more rapidly with increasing $|\\Delta T|$ in thin film geometry than in the bulk state.

Koji Fukao; Aiko Sakamoto

2004-10-23T23:59:59.000Z

414

Epitaxial EuO thin films on GaAs  

SciTech Connect

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57 deg., a significant remanent magnetization, and a Curie temperature of 69 K.

Swartz, A. G.; Ciraldo, J.; Wong, J. J. I.; Li Yan; Han Wei; Lin Tao; Shi, J.; Kawakami, R. K. [Department of Physics and Astronomy, University of California, Riverside, California 92521 (United States); Mack, S.; Awschalom, D. D. [Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106 (United States)

2010-09-13T23:59:59.000Z

415

Thin film solar cell including a spatially modulated intrinsic layer  

SciTech Connect

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

1989-03-28T23:59:59.000Z

416

Method for fabricating thin films of pyrolytic carbon  

DOE Patents (OSTI)

The present invention relates to a method for fabricating ultra-thin films of pyrolytic carbon. Pyrolytic carbon is vapor deposited onto a concave surface of a heated substrate to a total uniform thickness in the range of about 0.1 to 1.0 micrometer. The carbon film on the substrate is provided with a layer of adherent polymeric resin. The resulting composite film of pyrolytic carbon and polymeric resin is then easily separated from the substrate by shrinking the polymeric resin coating with thermally induced forces.

Brassell, Gilbert W. (Lenoir City, TN); Lewis, Jr., John (Oak Ridge, TN); Weber, Gary W. (Amherst, NY)

1982-01-01T23:59:59.000Z

417

Thin-film electrochemical power cells. Final report  

SciTech Connect

Fundamental properties of research cells were correlated with the projected performance of full scale power sources, considering both battery and supercapacitor concepts. In addition to establishing the data base for modelling and performance projections, the program had the additional objective of identifying loss mechanisms and degradation reactions, especially those unique to polymer thin film cell designs. Because of the intrinsic high electrode/electrolyte interface areas, interfacial reactions must be understood. Many applications require power under extreme conditions, and low temperature performance needs to be improved.

Owens, B.B.; Smyrl, W.H.

1991-01-01T23:59:59.000Z

418

Thin Film Absorbers Based on Plasmonic Phase Resonances  

E-Print Network (OSTI)

We demonstrate an efficient double-layer light absorber by exciting plasmonic phase resonances. We show that the addition of grooves can cause mode splitting of the plasmonic waveguide cavity modes and all the new resonant modes exhibit large absorptivity greater than 90%. Some of the generated absorption peaks have wide-angle characteristics. Furthermore, we find that the proposed structure is fairly insensitive to the alignment error between different layers. The proposed plasmonic nano-structure designs may have exciting potential applications in thin film solar cells, thermal emitters, novel infrared detectors, and highly sensitive bio-sensors.

Cui, Yanxia; Xu, Jun; He, Sailing; Fang, Nicholas X

2010-01-01T23:59:59.000Z

419

Pulsed laser deposition of ITO thin films and their characteristics  

SciTech Connect

The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 Multiplication-Sign 10{sup -4} {Omega} cm has been achieved in the ITO films with content of Sn 5 at %.

Zuev, D. A., E-mail: zuewda@yandex.ru; Lotin, A. A.; Novodvorsky, O. A.; Lebedev, F. V.; Khramova, O. D. [Russian Academy of Sciences, Institute on Laser and Information Technologies (Russian Federation); Petuhov, I. A.; Putilin, Ph. N.; Shatohin, A. N.; Rumyanzeva, M. N.; Gaskov, A. M. [Moscow State University, Faculty of Chemistry (Russian Federation)

2012-03-15T23:59:59.000Z

420

Drying radioactive wastewater salts using a thin film dryer  

SciTech Connect

This paper describes the operational experience in drying brines generated at a radioactive wastewater treatment facility. The brines are composed of aqueous ammonium sulfate/sodium sulfate and aqueous sodium nitrate/sodium sulfate, The brine feeds receive pretreatment to preclude dryer bridging and fouling. The dryer products are a distillate and a powder. The dryer is a vertical thin film type consisting of a steam heated cylinder with rotor. Maintenance on the dryer has been minimal. Although many operability problems have had to be overcome, dryer performance can now be said to be highly reliable.

Scully, D.E.

1998-03-19T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Thin film superconductors and process for making same  

DOE Patents (OSTI)

A process for the preparation of oxide superconductors from high-viscosity non-aqueous solution is described. Solutions of lanthanide nitrates, alkaline earth nitrates and copper nitrates in a 1:2:3 stoichiometric ratio, when added to ethylene glycol containing citric acid solutions, have been used to prepare highly viscous non-aqueous solutions of metal mixed nitrates-citrates. Thin films of these compositions are produced when a layer of the viscous solution is formed on a substrate and subjected to thermal decomposition.

Nigrey, P.J.

1988-01-21T23:59:59.000Z

422

Novel thin-film CuInSe sub 2 fabrication  

DOE Green Energy (OSTI)

This report describes research in Rapid Thermal Processing (RTP), a process that allows the formation of CuInSe{sub 2} without the use of H{sub 2}Se. RTP is a well-established method of rapidly achieving temperatures necessary to melt and recrystallize materials such as Si and and silicides. RTP processes can rapidly and uniformly heat large surface areas to hundreds of degrees Celsius. RTP is the most promising method of rapid recrystallization studied to date, being readily scalable from the research to the production level. The approach to the experiment was divided into two sections: (1) fabricating the precursor film and (2) processing the precursor film. The objective of the first phase of the work was to fabricate the thin films by RTP, then fully characterize them, to demonstrate the viability of the process as a method by which to make device-quality CuInSe{sub 2}. The second phase was to demonstrate that material made by this method could be used to make an active photovoltaic device. 24 refs.

Mooney, G.D.; Hermann, A.M. (Colorado Univ., Boulder, CO (United States))

1992-03-01T23:59:59.000Z

423

Using Thin Films to Screen Possible Scintillator Materials  

SciTech Connect

The discovery and optimization of new scintillators has traditionally been a rather slow process due to the difficulties of single crystal growth. This paper discusses the production of polycrystalline scintillator thin films (a few microns thick) which were tested in order to determine what characterizations could be made concerning a material’s ultimate potential as a scintillator prior to pursuing crystal growth. Thin films of CaF2(Eu), CeF3, and CeCl3, all known scintillators, were produced by vapor deposition. The hygroscopic CeCl3 was coated with multiple polymer-aluminum oxide bi-layers. Emission spectra peak wavelengths and decay times agreed with single crystal values. The films were too thin to measure gamma photopeaks, but using alpha energy deposition peaks, one could compare the relative photon yield/MeV between materials. The values obtained appear to give a relevant indication of a material’s light yield potential. The technique also appears useful for quickly determining the proper dopant amount for a given material.

Milbrath, Brian D.; Caggiano, Joseph A.; Engelhard, Mark H.; Joly, Alan G.; Matson, Dean W.; Nachimuthu, Ponnusamy; Olsen, Larry C.

2009-06-30T23:59:59.000Z

424

Sputter deposition for multi-component thin films  

DOE Patents (OSTI)

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

Krauss, Alan R. (Plainfield, IL); Auciello, Orlando (Cary, NC)

1990-01-01T23:59:59.000Z

425

Issue and challenges facing rechargeable thin film lithium batteries  

Science Conference Proceedings (OSTI)

New materials hold the key to fundamental advances in energy conversion and storage, both of which are vital in order to meet the challenge of global warming and the finite nature of fossil fuels. Nanomaterials in particular offer unique properties or combinations of properties as electrodes and electrolytes in a range of energy devices. Technological improvements in rechargeable solid-state batteries are being driven by an ever-increasing demand for portable electronic devices. Lithium batteries are the systems of choice, offering high energy density, flexible, lightweight design and longer lifespan than comparable battery technologies. We present a brief historical review of the development of lithium-based thin film rechargeable batteries highlight ongoing research strategies and discuss the challenges that remain regarding the discovery of nanomaterials as electrolytes and electrodes for lithium batteries also this article describes the possible evolution of lithium technology and evaluates the expected improvements, arising from new materials to cell technology. New active materials under investigation and electrode process improvements may allow an ultimate final energy density of more than 500 Wh/L and 200 Wh/kg, in the next 5-6 years, while maintaining sufficient power densities. A new rechargeable battery technology cannot be foreseen today that surpasses this. This report will provide key performance results for thin film batteries and highlight recent advances in their development.

Patil, Arun; Patil, Vaishali; Shin, Dong Wook; Choi, Ji-Won; Paik, Dong-Soo [Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Yoon, Seok-Jin [Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)], E-mail: sjyoon@kist.re.kr

2008-08-04T23:59:59.000Z

426

Catalyst-infiltrated supporting cathode for thin-film SOFCs  

DOE Green Energy (OSTI)

The fabrication and electrochemical performance of co-fired,LSM-SYSZ [i.e., La0.65Sr0.30MnO3 (LSM) - (Sc2O3)0.1(Y2O3)0.01(ZrO2)0.89] supported thin-film cells were examined using humidified hydrogen as a fuel. Co-firing of bi-layers and tri-layers was successful at 1250 C by optimizing the amount of carbon pore formers. A power density of a factor of 2.5 higher than that recently reported for the same type of cell at 800 C [3] was obtained for a cell with cobalt infiltration into the supporting cathode: the peak power densities were 455, 389, 285, 202, 141mW/cm2 at 800, 750, 700, 650, 600 C, respectively, and in most cases power densities at 0.7V exceeded more than 90 percent of the peak output. Increasing the cathode porosity from 43 to 53 percent improved peak power densities by as much as 1.3, shifting the diffusion limitation to high current densities. Cobalt infiltration into the support improved those by as much as a factor of 2 due to a significant reduction in non-ohmic resistance. These results demonstrate that cobalt catalyst-infiltrated LSM can be effective and low-cost supporting electrodes for reduced temperature, thin film SOFCs.

Yamahara, Keiji; Jacobson, Craig P.; Visco, Steven J.; De Jonghe,Lutgard C.

2004-04-12T23:59:59.000Z

427

Facile synthesis of porous-structured nickel oxide thin film by pulsed laser deposition  

Science Conference Proceedings (OSTI)

Porous-structured nickel oxide (PsNiO) was obtained through the oxidization of a nickel thin film. The nickel thin film was deposited using the pulsed laser deposition (PLD) method on a nickel foil as a substrate. The results show uniform PsNiO after ...

Siamak Pilban Jahromi; Nay Ming Huang; Ahmad Kamalianfar; Hong Ngee Lim; Muhamad Rasat Muhamad; Ramin Yousefi

2012-01-01T23:59:59.000Z

428

Analytical modeling and parameter extraction of top and bottom contact structures of organic thin film transistors  

Science Conference Proceedings (OSTI)

This paper proposes a structure based model of an organic thin film transistor (OTFT) and analyzes its device physics. The analytical model is developed for the top contact structure by mapping the overlap region to the resistance (in the vertical direction) ... Keywords: Analytical modeling, Contact resistance, Organic thin film transistor, Overlap region, Parameter extraction, Top and bottom contact structure, Vertical resistance

Brijesh Kumar, B. K. Kaushik, Y. S. Negi, S. Saxena, G. D. Varma

2013-09-01T23:59:59.000Z

429

Optimization of DC reactive magnetron sputtering deposition process for efficient YSZ electrolyte thin film SOFC  

E-Print Network (OSTI)

thin film SOFC H. Hidalgo1 , A.-L. Thomann1 , T. Lecas1 , J. Vulliet2 , K. Wittmann-Teneze2 , D of 350 mW.cm-2 . Keywords: Anode-Supported SOFC, Thin films, magnetron sputtering, YSZ, electrolyte 1...) into electricity. Among the different technologies [1], solid oxide fuel cells (SOFC) exhibit a high tolerance

430

Study of lithium diffusion in RF sputtered Nickel/Vanadium mixed oxides thin films  

E-Print Network (OSTI)

Study of lithium diffusion in RF sputtered NickelÁ/Vanadium mixed oxides thin films F. Artuso a lithium insertion inside RF sputtered Ni/V mixed oxides thin films have been investigated employing, showed three steps clearly involved in the intercalation mechanism of lithium in the oxide films: (i

Artuso, Florinda

431

Thin-film Lithium Niobate Contour-mode Resonators Renyuan Wang and Sunil A. Bhave  

E-Print Network (OSTI)

Thin-film Lithium Niobate Contour-mode Resonators Renyuan Wang and Sunil A. Bhave School Micro Devices, Inc. Greensboro, North Carolina, USA Abstract--This paper presents Lithium Niobate (LN this platform, we demonstrate, on a black Y136 cut Lithium Niobate thin-film, one-port high-order width

Afshari, Ehsan

432

Photopyroelectric thin?film instrumentation and impulse?response detection. Part I: A theoretical model  

Science Conference Proceedings (OSTI)

Thin?film pyroelectric effect detectors provide a simple means of measuring thermal properties of solid samples. The present work reports a time?delay theoreticalmodel of thin?film pyroelectric detection which enables the recovery of thermal diffusivity and thermal conductivity information from the impulse response of the pyroelectric system.

Joan F. Power; Andreas Mandelis

1987-01-01T23:59:59.000Z

433

High Frequency Characteristicsof NanocompositeThin Film "Supercapacitors" and their Suitability For EmbeddedDecoupling  

E-Print Network (OSTI)

High Frequency Characteristicsof NanocompositeThin Film "Supercapacitors" and their Suitability, the capacitance density would be much lower. Newer capacitor concepts such as supercapacitors can overcome and the suitability of the thin film supercapacitors for high-frequency decoupling applications will be discussed. 1

Swaminathan, Madhavan

434

Hard and elastic amorphous carbon nitride thin films studied by 13 C nuclear magnetic  

E-Print Network (OSTI)

Hard and elastic amorphous carbon nitride thin films studied by 13 C nuclear magnetic resonance bonding of hard and elastic amorphous carbon nitride (a-CNx) thin films was examined using solid-state 13 on Si 001 substrates at 300 °C. Nanoindentation tests reveal a recovery of 80%, a hardness of 5 GPa

Reilly, Anne

435

Thin-Film Active Nano-PWAS for Structural Health Monitoring , Victor Giurgiutiu1  

E-Print Network (OSTI)

Thin-Film Active Nano-PWAS for Structural Health Monitoring Bin Lin1 , Victor Giurgiutiu1 , Amar S be fabricated directly to the structural substrate using thin-film nano technologies (e.g., pulsed-laser deposition, sputtering, chemical vapor deposition, etc.) Because these novel PWAS are made up of nano layers

Giurgiutiu, Victor

436

Analysis of defects at the interface between high-k thin films and (100) silicon  

Science Conference Proceedings (OSTI)

Paramagnetic defects in atomic layer deposition grown aluminium oxide thin films have been studied using electron paramagnetic resonance. Initial spectra indicate the presence of Si-db, P"b"0 and P"b"1 defects, previously observed in Si/SiO"2 structures. ... Keywords: Aluminium oxide, Defects, EPR, High-k, Interfaces, Thin films

B. J. Jones; R. C. Barklie

2005-06-01T23:59:59.000Z

437

Fully Integrated Applications of Thin Films on Low Temperature Cofired Ceramic (LTCC)  

SciTech Connect

Thin film multilayers have previously been introduced on multilayer low temperature cofired ceramic (LTCC), as well as initial thin film capacitors on LTCC. The ruggedness of a multipurpose Ti-Cu-Pt-Au stack for connectivity and RF conductivity has continued to benefit fabrication and reliability in state of-the-art modules, while the capacitors have followed the traditional Metal-Insulator-Metal (MIM) style. The full integration of thin film passives with thin film connectivity traces is presented. Certain passives, such as capacitors, require specifically tailored and separately patterned thin film (multi-)layers, including a dielectric. Different capacitance values are achieved by variation of both the insulator layer thickness and the active area of the capacitor. Other passives, such as filters, require only the conductor - a single thin film multilayer. This can be patterned from the same connectivity thin film material (Ti-Cu-Pt-Au), or a specially tailored thin film material (e.g. Ti-Cu-Au) can be deposited. Both versions are described, including process and integration details. Examples are discussed, ranging from patterning for maximum tolerances, to space and performance-optimized designs. Cross-sectional issues associated with integration are also highlighted in the discussion.

Ambrose Wolf; Ken Peterson; Matt O'Keefe; Wayne Huebner; Bill Kuhn

2012-04-19T23:59:59.000Z

438

Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices  

SciTech Connect

Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

Nastasi, Michael Anthony; Wang, Yongqiang; Fraboni, Beatrice; Cosseddu, Piero; Bonfiglio, Annalisa

2013-06-11T23:59:59.000Z

439

Phase transition on CdSe thin films by changing the volume concentration of Se  

Science Conference Proceedings (OSTI)

In this work CdSe thin films were grown by chemical bath deposition (CBD)6 onto glass substrate with approximately 2000 Å thickness. The samples have been prepared by changing the volume concentration of the solution in the range of 5-45 ... Keywords: CdSe, thin films, chemical bath, phase transitions, semiconductors

M. Rubín; J. I. Cortez; H. Juárez; E. Rosendo; T. Díaz; G. García Salgado; I. Villaverde; R. Lozada-Morales; O. Portillo-Moreno; O. Zelaya-Ngel

2007-07-01T23:59:59.000Z

440

Effect of sputter pressure on stress evolution in Ta thin films during ...  

Science Conference Proceedings (OSTI)

Abstract Scope, Tantalum thin films can be sputtered in two different phases that have ... tantalum thin films using a range of argon sputter gas pressures from 0.3 to 2.2 Pa. ... Load drop and slip step statistics in cast aluminium and magnesium microwires ... Predicting flow curve of dual-phase steels through nanoindentation.

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Electrochromic-photovoltaic film for light-sensitive control of optical transmittance  

DOE Patents (OSTI)

A variable transmittance optical component includes an electrochromic material and a photovoltaic device-type thin film solar cell deposited in a tandem type, monolithic single coating over the component. A bleed resistor of a predetermined value is connected in series across the electrochromic material and photovoltaic device controlling the activation and deactivation of the electrochromic material. The electrical conductivity between the electrochromic material and the photovoltaic device is enhanced by interposing a transparent electrically conductive layer. 5 figures.

Branz, H.M.; Crandall, R.S.; Tracy, C.E.

1994-12-27T23:59:59.000Z

442

Electrochromic-photovoltaic film for light-sensitive control of optical transmittance  

DOE Patents (OSTI)

A variable transmittance optical component includes an electrochromic material and a photovoltaic device-type thin film solar cell deposited in a tandem type, monolithic single coating over the component. A bleed resistor of a predetermined value is connected in series across the electrochromic material and photovoltaic device controlling the activation and deactivation of the electrochromic material. The electrical conductivity between the electrochromic material and the photovoltaic device is enhanced by interposing a transparent electrically conductive layer.

Branz, Howard M. (Boulder, CO); Crandall, Richard S. (Golden, CO); Tracy, C. Edwin (Golden, CO)

1994-01-01T23:59:59.000Z

443

Electrochemical Behavior and Li Diffusion Study of LiCoO? Thin Film Electrodes Prepared by PLD  

E-Print Network (OSTI)

Preferred c-axis oriented LiCoO? thin films were prepared on the SiO?/Si (SOS) substrates by pulsed laser deposition (PLD). Thin film electrodes without carbon and binder are ideal samples to study the electrochemical ...

Xia, H.

444

Solar Thin Films Inc formerly American United Global Inc | Open Energy  

Open Energy Info (EERE)

Films Inc formerly American United Global Inc Films Inc formerly American United Global Inc Jump to: navigation, search Name Solar Thin Films Inc (formerly American United Global Inc) Place New York, New York Zip 10038 Sector Solar Product A US-based solar manufacturing equipment supplier. References Solar Thin Films Inc (formerly American United Global Inc)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Thin Films Inc (formerly American United Global Inc) is a company located in New York, New York . References ↑ "Solar Thin Films Inc (formerly American United Global Inc)" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Thin_Films_Inc_formerly_American_United_Global_Inc&oldid=351338

445

Thin film transistors and solar cells. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search  

SciTech Connect

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

NONE

1996-04-01T23:59:59.000Z

446

Sputter deposition and characterization of lithium cobalt oxide thin films and their applications in thin-film rechargeable lithium batteries  

DOE Green Energy (OSTI)

Li Co oxide thin films were deposited by rf magnetron sputtering of a LiCoO{sub 2} target in a 3:1 Ar/O{sub 2} mixture gas. From proton-induced gamma-ray emission analysis and Rutherford backscattering spectrometry, the average composition of these films was determined to be Li{sub 1.15}CoO{sub 2.16}. X-ray powder diffraction patterns of films annealed in air at 500-700 C were consistent with regular rhombohedral structure of crystalline LiCoO{sub 2}. Discharge curves of thin film lithium cells with amoprohous LiCoO{sub 2} showed no obvious structural transition between 4.2 and 1.5 V. Shape of discharge curves of cells with polycrystalline cathodes were consistent with a two-phase voltage plateau at {similar_to}3.9 V with a relatively large capacity and two additional smaller plateaus at higher voltages. Cells with the 700 C annealed cathodes showed a capacity loss of {similar_to} after 1000 cycles between 4.2 and 3.0 V.

Wang, B.; Bates, J.B.; Luck, C.F.; Sales, B.C.; Zuhr, R.A. [Oak Ridge National Lab., TN (United States); Robertson, J.D. [Kentucky Univ., Lexington, KY (United States). Dept. of Chemistry

1996-01-01T23:59:59.000Z

447

American Photovoltaics | Open Energy Information  

Open Energy Info (EERE)

American Photovoltaics American Photovoltaics Name American Photovoltaics Place Houston, Texas Zip 77002 Sector Solar Product Will manufacture thin-film solar modules Website http://apv-us.com/ Coordinates 29.752554°, -95.3704009° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":29.752554,"lon":-95.3704009,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

448

Photovoltaic Subcontract Program, FY 1991  

DOE Green Energy (OSTI)

This report summarizes the fiscal year (FY) 1991 (October 1, 1990, through September 30, 1991) progress of the subcontracted photovoltaic (PV) research and development (R D) performed under the Photovoltaic Advanced Research and Development Project at the National Renewable Energy Laboratory (NREL) -- formerly the Solar Energy Research Institute (SERI). The mission of the national PV program is to develop PV technology for large-scale generation of economically competitive electric power in the United States. The technical sections of the report cover the main areas of the subcontract program: the Amorphous Silicon Research Project, Polycrystalline Thin Films, Crystalline Silicon Materials Research, High-Efficiency Concepts, the New Ideas Program, the University Participation Program, and the Photovoltaic Manufacturing Technology (PVMaT) project. Technical summaries of each of the subcontracted programs provide a discussion of approaches, major accomplishments in FY 1991, and future research directions.

Not Available

1992-03-01T23:59:59.000Z

449

Overview and Challenges of Thin Film Solar Electric Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

and Challenges of Thin and Challenges of Thin Film Solar Electric Technologies H.S. Ullal Presented at the World Renewable Energy Congress X and Exhibition 2008 Glasgow, Scotland, United Kingdom July 19-25, 2008 Conference Paper NREL/CP-520-43355 December 2008 NOTICE The submitted manuscript has been offered by an employee of the Alliance for Sustainable Energy, LLC (ASE), a contractor of the US Government under Contract No. DE-AC36-08-GO28308. Accordingly, the US Government and ASE retain a nonexclusive royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for US Government purposes. This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any

450

Investigation of multi-layer thin films for energy storage.  

DOE Green Energy (OSTI)

We investigate here the feasibility of increasing the energy density of thin-film capacitors by construction of a multi-layer capacitor device through ablation and redeposition of the capacitor materials using a high-power pulsed ion beam. The deposition experiments were conducted on the RHEPP-1 facility at Sandia National Laboratories. The dielectric capacitor filler material was a composition of Lead-Lanthanum-Zirconium-Titanium oxide (PLZT). The energy storage can be increased by using material of intrinsically high dielectric constant, and constructing many thin layers of this material. For successful device construction, there are a number of challenging requirements including correct stoichiometric and crystallographic composition of the deposited PLZT. This report details some success in satisfying these requirements, even though the attempt at device manufacture was unsuccessful. The conclusion that 900 C temperatures are necessary to reconstitute the deposited PLZT has implications for future manufacturing capability.

Renk, Timothy Jerome; Monson, Todd

2009-01-01T23:59:59.000Z

451

Characterization of Field Exposed Thin Film Modules: Preprint  

DOE Green Energy (OSTI)

Test arrays of thin film modules have been deployed at the Solar Energy Centre near New Delhi, India since 2002-2003. Performances of these arrays were reported by O.S. Sastry [1]. This paper reports on NREL efforts to support SEC by performing detailed characterization of selected modules from the array. Modules were selected to demonstrate both average and worst case power loss over the 8 years of outdoor exposure. The modules characterized included CdTe, CIS and three different types of a-Si. All but one of the a-Si types were glass-glass construction. None of the modules had edge seals. Detailed results of these tests are presented along with our conclusions about the causes of the power loss for each technology.

Wohlgemuth, J. H.; Sastry, O. S.; Stokes, A.; Singh, Y. K.; Kumar, M.

2012-06-01T23:59:59.000Z

452

Post-growth surface smoothing of thin films of diindenoperylene  

Science Conference Proceedings (OSTI)

We applied in situ x-ray reflectivity and ultraviolet photoelectron spectroscopy to study the impact of annealing on low temperature (200 K) deposited organic thin films of diindenoperylene (DIP) on SiO{sub 2} and indium tin oxide (ITO). At 200 K, DIP is crystalline on SiO{sub 2} and amorphous on ITO. Upon heating to room temperature, the roughness of DIP is reduced on both substrates, from 1.5 nm to 0.75 nm (SiO{sub 2}) and from 0.90 nm to 0.45 nm (ITO). The smoothing is accompanied by crystallization of the surface molecules, whereas the bulk structure of the films does not strongly reorganize.

Hinderhofer, A. [Institute for Applied Physics, University of Tuebingen, Auf der Morgenstelle 10, Tuebingen 72076 (Germany); Graduate School of Advanced Integration Science, Chiba University,1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Hosokai, T. [Department of Materials and Science, Iwate University, Ueda 4-3-5, Morioka, Iwate 0208551 (Japan); Yonezawa, K.; Kato, K.; Kera, S.; Ueno, N. [Graduate School of Advanced Integration Science, Chiba University,1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Gerlach, A.; Broch, K.; Frank, C.; Schreiber, F. [Institute for Applied Physics, University of Tuebingen, Auf der Morgenstelle 10, Tuebingen 72076 (Germany); Novak, J. [Institute for Applied Physics, University of Tuebingen, Auf der Morgenstelle 10, Tuebingen 72076 (Germany); European Synchrotron Radiation Facility (ESRF), BP 220, Grenoble 38043 (France)

2012-07-16T23:59:59.000Z

453

Growth study of ion assisted evaporated molybdenum thin films  

Science Conference Proceedings (OSTI)

We reported optimization of ion-to-atom ratios and ion energy for growth of molybdenum thin film on oxidized silicon substrate using ion assisted electron beam evaporation system. The ion-to-atom ratio is varied by independently adjusting the ion current density and deposition rate. The structural characterization of the films is carried out by hard X-ray reflectivity. We observed improvement in film density from 85.5% to 98.2% and film roughness from {approx}2 nm to 0.84nm on {approx}26 nm thick Mo film by optimizing ion parameters. The observed results are discussed considering the effect of kinetic of adatoms during growth of film.

Yadav, P. K.; Nayak, M.; Lodha, G. S.; Rai, S. [X-ray Optics Section, Indus Synchrotrons Utilization Division, Raja Ramanna Centre For Advanced Technology, Indore-452013 (India)

2012-06-25T23:59:59.000Z

454

Ultra-high current density thin-film Si diode  

DOE Patents (OSTI)

A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

Wang; Qi (Littleton, CO)

2008-04-22T23:59:59.000Z

455

Nantong Qiangsheng Photovoltaic Technology Co Ltd QS Solar | Open Energy  

Open Energy Info (EERE)

Nantong Qiangsheng Photovoltaic Technology Co Ltd QS Solar Nantong Qiangsheng Photovoltaic Technology Co Ltd QS Solar Jump to: navigation, search Name Nantong Qiangsheng Photovoltaic Technology Co Ltd (QS Solar) Place Shanghai Municipality, China Zip 200336 Sector Solar Product Chinese amorphous thin-film solar cell maker. References Nantong Qiangsheng Photovoltaic Technology Co Ltd (QS Solar)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Nantong Qiangsheng Photovoltaic Technology Co Ltd (QS Solar) is a company located in Shanghai Municipality, China . References ↑ "[ Nantong Qiangsheng Photovoltaic Technology Co Ltd (QS Solar)]" Retrieved from "http://en.openei.org/w/index.php?title=Nantong_Qiangsheng_Photovoltaic_Technology_Co_Ltd_QS_Solar&oldid=349037

456

Study of a hydrogen-bombardment process for molecular cross-linking within thin films  

SciTech Connect

A low-energy hydrogen bombardment method, without using any chemical additives, has been designed for fine tuning both physical and chemical properties of molecular thin films through selectively cleaving C-H bonds and keeping other bonds intact. In the hydrogen bombardment process, carbon radicals are generated during collisions between C-H bonds and hydrogen molecules carrying {approx}10 eV kinetic energy. These carbon radicals induce cross-linking of neighboring molecular chains. In this work, we focus on the effect of hydrogen bombardment on dotriacontane (C{sub 32}H{sub 66}) thin films as growing on native SiO{sub 2} surfaces. After the hydrogen bombardment, XPS results indirectly explain that cross-linking has occurred among C{sub 32}H{sub 66} molecules, where the major chemical elements have been preserved even though the bombarded thin film is washed by organic solution such as hexane. AFM results show the height of the perpendicular phase in the thin film decreases due to the bombardment. Intriguingly, Young's modulus of the bombarded thin films can be increased up to {approx}6.5 GPa, about five times of elasticity of the virgin films. The surface roughness of the thin films can be kept as smooth as the virgin film surface after thorough bombardment. Therefore, the hydrogen bombardment method shows a great potential in the modification of morphological, mechanical, and tribological properties of organic thin films for a broad range of applications, especially in an aggressive environment.

Liu, Y.; Yang, J. [Department of Mechanical and Materials Engineering, University of Western Ontario, London, Ontario (Canada); Yang, D. Q.; Nie, H.-Y.; Lau, W. M. [Surface Science Western, University of Western Ontario, London, Ontario (Canada)

2011-02-21T23:59:59.000Z

457

High-field magnets using high-critical-temperature superconducting thin films  

DOE Patents (OSTI)

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field.

Mitlitsky, Fred (Livermore, CA); Hoard, Ronald W. (Livermore, CA)

1994-01-01T23:59:59.000Z

458

High-field magnets using high-critical-temperature superconducting thin films  

DOE Patents (OSTI)

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla are disclosed. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field. 4 figures.

Mitlitsky, F.; Hoard, R.W.

1994-05-10T23:59:59.000Z

459

Formation of thin-film high T/sub c/ superconductors by metalorganic deposition  

Science Conference Proceedings (OSTI)

Metalorganic deposition (MOD) is a nonvacuum method of thin-film deposition which allows easy alteration of chemical components and is compatible with thin-film processing. We report the preparation of thin-film superconductors by MOD. Rutherford backscattering spectrometry was used to determine film compositions and thicknesses. Films, approximately 500 nm thick, of YBa/sub 2/Cu/sub 4/O/sub z/ (z undetermined) were deposited on single-crystal SrTiO/sub 3/. A superconducting onset temperature of 90 K was measured with 37 K the zero resistance temperature. Scanning electron microscopy revealed grain sizes approximately 250 nm in diameter.

Hamdi, A.H.; Mantese, J.V.; Micheli, A.L.; Laugal, R.C.O.; Dungan, D.F.; Zhang, Z.H.; Padmanabhan, K.R.

1987-12-21T23:59:59.000Z

460

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof  

DOE Patents (OSTI)

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Perkins, John (Boulder, CO); Van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David (Evergreen, CO); Taylor, Matthew (Golden, CO); Neuman, George A. (Holland, MI); Luten, Henry A. (Holland, MI); Forgette, Jeffrey A. (Hudsonville, MI); Anderson, John S. (Holland, MI)

2010-07-13T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film photovoltaics cxs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Silicon-integrated thin-film structure for electro-optic applications  

DOE Patents (OSTI)

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

McKee, Rodney A. (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

462

Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application  

DOE Patents (OSTI)

A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

Hawkins, G.A.; Clarke, J.

1975-10-31T23:59:59.000Z

463

NREL PV AR&D 11th review meeting, May 13--15, 1992, Denver Marriott City Center, Denver, Colorado. Photovoltaic Advanced Research and Development Project  

DOE Green Energy (OSTI)

This is a collection of abstracts from papers presented at the National Renewable Energy Laboratory (NREL) Photovoltaic (PV) research and development review meeting held May 1992. Subject areas covered include solar cell and solar module manufacturing and development, materials, polycrystalline thin films, applications, amorphous silicon, solar cell performance and testing, crystalline silicon and other photovoltaic and safety perspectives. (GHH)

Not Available

1992-06-01T23:59:59.000Z

464

Device Physics of Thin-Film Polycrystalline Cells and Modules; Final Subcontract Report; 6 December 1993-15 March 1998  

DOE Green Energy (OSTI)

This report describes work performed under this subcontract by Colorado State University (CSU). The results of the subcontract effort included progress in understanding CdTe and Cu(In1-xGax)Se2-based solar cells, in developing additional measurement and analysis techniques at the module level, and in strengthening collaboration within the thin-film polycrystalline solar-cell community. A major part of the CdTe work consisted of elevated-temperature stress tests to determine fabrication and operation conditions that minimize the possibility of long-term performance changes. Other CdTe studies included analysis of the back-contact junction, complete photon accounting, and the tradeoff with thin CdS between photocurrent gain and voltage loss. The Cu(In1-xGax)Se2 studies included work on the role of sodium in enhancing performance, the conditions under which conduction-band offsets affect cell performance, the transient effects of cycling between light and dark conditions, and detailed analysis of several individual series of cells. One aspect of thin-film module analysis has been addressing the differences in approach needed for relatively large individual cells made without grids. Most work, however, focused on analysis of laser-scanning data, including defect signatures, photocurrent/shunting separation, and the effects of forward bias or high-intensity light. Collaborations with other laboratories continued on an individual basis, and starting in 1994, collaboration was through the national R&D photovoltaic teams. CSU has been heavily involved in the structure and logistics of both the CdTe and CIS teams, as well as making frequent technical contributions in both areas.

Sites, J. R. (Department of Physics, Colorado State University, Ft. Collins, Colorado)

1999-05-03T23:59:59.000Z

465

Sputtered Nickel Oxide Thin Film for Efficient Hole Transport Layer in Polymer-Fullerene Bulk-Heterojunction Organic Solar Cell  

SciTech Connect

Bulk-heterojunction (BHJ) organic photovoltaics (OPV) are very promising thin film renewable energy conversion technologies due to low production cost by high-throughput roll-to-roll manufacturing, an expansive list of compatible materials, and flexible device fabrication. An important aspect of OPV device efficiency is good contact engineering. The use of oxide thin films for this application offers increased design flexibility and improved chemical stability. Here we present our investigation of radio frequency magnetron sputtered nickel oxide (NiO{sub x}) deposited from oxide targets as an efficient, easily scalable hole transport layer (HTL) with variable work-function, ranging from 4.8 to 5.8 eV. Differences in HTL work-function were not found to result in statistically significant changes in open circuit voltage (V{sub oc}) for poly(3-hexylthiophene):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (P3HT:PCBM) BHJ device. Ultraviolet photoemission spectroscopy (UPS) characterization of the NiO{sub x} film and its interface with the polymer shows Fermi level alignment of the polymer with the NiO{sub x} film. UPS of the blend also demonstrates Fermi level alignment of the organic active layer with the HTL, consistent with the lack of correlation between V{sub oc} and HTL work-function. Instead, trends in j{sub sc}, V{sub oc}, and thus overall device performance are related to the surface treatment of the HTL prior to active layer deposition through changes in active layer thickness.

Widjonarko, N. E.; Ratcliff, E. L.; Perkins, C. L.; Sigdel, A. K.; Zakutayev, A.; Ndione, P. F.; Gillaspie, D. T.; Ginley, D. S.; Olson, D. C.; Berry, J. J.

2012-03-01T23:59:59.000Z

466

Structural Studies of Al:ZnO Powders and Thin Films | Stanford Synchrotron  

NLE Websites -- All DOE Office Websites (Extended Search)

Structural Studies of Al:ZnO Powders and Thin Films Structural Studies of Al:ZnO Powders and Thin Films Monday, June 18, 2012 - 2:00pm SSRL Main Conference Room 137-322 Dr. Bridget Ingham, Associate Investigator, MacDiarmid Institute for Advanced Materials & Nanotechnology Al-doped ZnO (Al:ZnO) is a promising transparent conducting oxide. We have used complementary synchrotron and laboratory techniques to study the incorporation of Al within the ZnO lattice, and measure its effect on the crystallinity of thin films prepared by sol-gel techniques, with an aim to understand how these properties affect the film conductivity. I will present recent results from Al:ZnO powders and thin films, prepared with varying Al concentrations and calcination temperatures. Solid state 27Al NMR and ex situ X-ray diffraction (XRD) were performed on Al:ZnO

467

Integrated photonic structures for light trapping in thin-film Si solar cells  

E-Print Network (OSTI)

We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

Sheng, Xing

468

Cu(In,Ga)Se2 Thin-Film Concentrator Solar Cells: Preprint  

DOE Green Energy (OSTI)

Presented at the 2001 NCPV Program Review Meeting: CIGS cells were designed for operation under concentrated sunlight. This is first report of polycrystalline thin-film cell with efficiency>20%.

Ward, J.; Ramanathan, K.; Hasoon, F.; Coutts, T.; Keane, J.; Moriarty, T; Noufi, R.

2001-10-01T23:59:59.000Z

469

Structure and Effects of Extended Defects in Polycrystalline Si Thin Films  

DOE Green Energy (OSTI)

The structure and effects of extended defects in rapid deposited polycrystalline Si thin films were studied using a combination of high-resolution transmission electron microscopy and first-principles total energy calculations.

Yan, Y.; Al-Jassim, M. M.; Wang, T. H.; Ciszek, T. F.

2000-01-01T23:59:59.000Z

470

A direct thin-film path towards low-cost large-area III-V ...  

A direct thin-film path towards low-cost large-area III-V ... depending on the surface energy constraints of the nucleation ... scaling all times in ...

471

Integration of pentacene-based thin film transistors via photolithography for low and high voltage applications  

E-Print Network (OSTI)

An organic thin film transistor (OTFT) technology platform has been developed for flexible integrated circuits applications. OTFT performance is tuned by engineering the dielectric constant of the gate insulator and the ...

Smith, Melissa Alyson

2012-01-01T23:59:59.000Z

472

Micro/nano devices fabricated from Cu-Hf thin films  

DOE Patents (OSTI)

An all-metal microdevice or nanodevice such as an atomic force microscope probe is manufactured from a copper-hafnium alloy thin film having an x-ray amorphous microstructure.

Luber, Erik J; Ophus, Colin; Mitlin, David; Olsen, Brian; Harrower, Christopher; Radmilovi, Velimir

2013-06-04T23:59:59.000Z

473

Matrix-assisted pulsed laser thin film deposition by using Nd: YAG laser  

Science Conference Proceedings (OSTI)

Matrix-Assisted Pulsed Laser Evaporation (MAPLE) is a deposition technique, developed from Pulsed Laser Deposition (PLD) especially well suited for producing organic/polymeric thin films, which can take advantage from using Nd:YAG laser. Depending on ...

Francesco Bloisi; Mario Barra; Antonio Cassinese; Luciano Rosario Maria Vicari

2012-01-01T23:59:59.000Z

474

Efficient Föster energy transfer : from phosphorescent organic molecules to J-aggregate thin film  

E-Print Network (OSTI)

This thesis demonstrates the first ever use of Forster resonance energy transfer (FRET) to increase the quantum efficiency of a electrically pumped J-aggregate light emitting device (JLED). J-aggregate thin films are highly ...

Shirasaki, Yasuhiro

2008-01-01T23:59:59.000Z

475

Technological assessment of light-trapping technology for thin-film Si solar cell  

E-Print Network (OSTI)

The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was analyzed from the technology, market, and ...

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

476

Study on the Humidity Susceptibility of Thin-Film CIGS Absorber  

SciTech Connect

The report summarizes the research on the susceptibility of a thermally co-evaporated CuInGaSe2 (CIGS) thin-film absorber to humidity and its consequence on composition, morphology, electrical and electronic properties, and device efficiency.

Pern, F. J.; Egaas, B.; To, B.; Jiang, C. S.; Li, J. V.; Glynn, S.; DeHart, C.

2010-01-01T23:59:59.000Z

477

Earth abundant materials for high efficiency heterojunction thin film solar cells  

E-Print Network (OSTI)

We investigate earth abundant materials for thin-film solar cells that can meet tens of terawatts level deployment potential. Candidate materials are identified by combinatorial search, large-scale electronic structure ...

Buonassisi, Tonio

478

Interaction of stress and magnetic properties in patterned copper-nickel-copper thin films  

E-Print Network (OSTI)

In recent years, the epitaxial Cu/Ni/Cu thin film system has been extensively studied, due to its wide range of perpendicular magnetization. It has proved to be a model system to explore the interactions of strain, surface ...

Friend, Elizabeth, Ph. D. Massachusetts Institute of Technology

2007-01-01T23:59:59.000Z

479

Preparation of thin films by ablation with ANACONDA ion beam generator  

Science Conference Proceedings (OSTI)

Thin films of silicon carbide are produced by using the technology of ion beam evaporation. Various analytical methods are used to analyze film thickness, film composition and crystallization for samples obtained with different target-substrate distances.

Yatsui, K.; Jiang, W. [Nagaoka Univ. of Technology (Japan). Lab. of Beam Technology; Davis, H.A.; Olson, J.C.; Waganaar, W.J.; Rej, D. [Los Alamos National Lab., NM (United States)

1996-12-31T23:59:59.000Z

480

Femtosecond transient absorption studies in cadmium selenide nanocrystal thin films prepared by chemical bath deposition method  

Science Conference Proceedings (OSTI)

Dynamics of photo-excited carrier relaxation processes in cadmium selenide nanocrystal thin films prepared by chemical bath deposition method have been studied by nondegenerate femtosecond transient pump-probe spectroscopy. The carriers were generated ...

M. C. Rath; J. A. Mondal; D. K. Palit; T. Mukherjee; H. N. Ghosh

2007-01-01T23:59:59.000Z

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