Sample records for thin-film oxide interfaces

  1. Direct Measurement of Oxygen Incorporation into Thin Film Oxides...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Measurement of Oxygen Incorporation into Thin Film Oxides at Room Temperature Upon Ultraviolet Phton Irradiation. Direct Measurement of Oxygen Incorporation into Thin Film Oxides...

  2. Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors Using Molecular Passivation. Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors Using Molecular...

  3. Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

    SciTech Connect (OSTI)

    Coux, P. de [Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Barcelona (Spain); CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4 (France); Bachelet, R.; Fontcuberta, J.; Sánchez, F., E-mail: fsanchez@icmab.es [Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Barcelona (Spain); Warot-Fonrose, B. [CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4 (France); Skumryev, V. [Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Spain and Dep. de Física, Univ. Autònoma de Barcelona, 08193 Bellaterra (Spain); Lupina, L.; Niu, G.; Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

    2014-07-07T23:59:59.000Z

    A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe{sub 2}O{sub 4} films can be grown epitaxially on Si(111) using a Y{sub 2}O{sub 3} buffer layer, and remarkably the Y{sub 2}O{sub 3}/Si(111) interface is stable and remains atomically sharp. CoFe{sub 2}O{sub 4} films present high crystal quality and high saturation magnetization.

  4. Doping in Zinc Oxide Thin Films

    E-Print Network [OSTI]

    Yang, Zheng

    2009-01-01T23:59:59.000Z

    properties of ZnO:Mn thin films were comprehensivelyd exchange in ZnO:Mn DMS thin films. Both the ordinary andspin-obital ferromagnetism in ZnO:Mn DMS thin films.

  5. CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS

    E-Print Network [OSTI]

    Hart, Gus

    CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS by David T. Oliphant. Woolley Dean, College of Physical and Mathematical Sciences #12;ABSTRACT CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS David T. Oliphant Department of Physics and Astronomy

  6. Electrochromism in copper oxide thin films

    SciTech Connect (OSTI)

    Richardson, T.J.; Slack, J.L.; Rubin, M.D.

    2000-08-15T23:59:59.000Z

    Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

  7. Method of producing solution-derived metal oxide thin films

    DOE Patents [OSTI]

    Boyle, Timothy J. (Albuquerque, NM); Ingersoll, David (Albuquerque, NM)

    2000-01-01T23:59:59.000Z

    A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

  8. Nanostructured thin films for solid oxide fuel cells 

    E-Print Network [OSTI]

    Yoon, Jongsik

    2009-05-15T23:59:59.000Z

    The goals of this work were to synthesize high performance perovskite based thin film solid oxide fuel cell (TF-SOFC) cathodes by pulsed laser deposition (PLD), to study the structural, electrical and electrochemical properties of these cathodes...

  9. Molybdenum as a contact material in zinc tin oxide thin film transistors

    SciTech Connect (OSTI)

    Hu, W.; Peterson, R. L., E-mail: blpeters@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

    2014-05-12T23:59:59.000Z

    Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line method. The width-normalized contact resistance between ZTO and sputtered molybdenum is measured to be 8.7 ?-cm, which is 10, 20, and 600 times smaller than that of gold/titanium, indium tin oxide, and evaporated molybdenum electrodes, respectively. The superior contact formed using sputtered molybdenum is due to a favorable work function lineup, an insulator-free interface, bombardment of ZTO during molybdenum sputtering, and trap-assisted tunneling. The transfer length of the sputtered molybdenum/ZTO contact is 0.34??m, opening the door to future radio-frequency sub-micron molybdenum/ZTO thin film transistors.

  10. Microstructure of amorphous indium oxide and tin oxide thin films

    SciTech Connect (OSTI)

    Rauf, I.A.; Brown, L.M. (Univ. of Cambridge (United Kingdom))

    1994-03-15T23:59:59.000Z

    Indium oxide, tin oxide, and some other doped and undoped oxide semiconductors show an interesting and technologically important combination of properties. They have high luminous transparency, good electrical conductivity and high infrared reflectivity. Numerous techniques for depositing these materials have been developed and have undergone a number of changes during last two decades. An understanding of the basic physics of these materials has begun to dawn. Most of the literature on transparent conducting oxides consists of studying the dependence of the properties on the composition, preparation conditions, such as deposition rate, substrate temperature or post-deposition heat treatment. In this paper the authors have employed the transmission electron microscopy to study the microstructure of reactively evaporated, electron beam evaporated, ion-beam sputtered amorphous indium oxide and reactively evaporated amorphous tin oxide thin films. These films, which have received little attention in the past, can have enormous potential as transparent conductive coatings on heat-sensitive substrates and inexpensive solar cells.

  11. Plasticity contributions to interface adhesion in thin-film interconnect structures

    E-Print Network [OSTI]

    Vainchtein, Anna

    Plasticity contributions to interface adhesion in thin-film interconnect structures Michael Lanea of plasticity in thin copper layers on the interface fracture resistance in thin-film interconnect structures yield properties together with a plastic flow model for the metal layers were used to predict

  12. Nitrogen doped zinc oxide thin film

    SciTech Connect (OSTI)

    Li, Sonny X.

    2003-12-15T23:59:59.000Z

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  13. Unexpected behaviour of one Pb monolayer deposited on aluminum oxide thin film grown on Ag(111)

    SciTech Connect (OSTI)

    Vizzini, Sébastien, E-mail: sebastien.vizzini@im2np.fr; Bertoglio, M. [IM2NP CNRS, Aix Marseille Université, F-13397 Marseille (France)] [IM2NP CNRS, Aix Marseille Université, F-13397 Marseille (France); Oughaddou, Hamid [Institut des Sciences Moléculaires d'Orsay, ISMO CNRS, Université de Paris, F-91405 Orsay, France and Deptartamento de Physique, Université de Cergy-Pontoise, F-95031 Cergy-Pontoise (France)] [Institut des Sciences Moléculaires d'Orsay, ISMO CNRS, Université de Paris, F-91405 Orsay, France and Deptartamento de Physique, Université de Cergy-Pontoise, F-95031 Cergy-Pontoise (France); Hoarau, J. Y.; Biberian, J. P.; Aufray, B. [CINaM CNRS, Aix Marseille Université, F-13288 Marseille (France)] [CINaM CNRS, Aix Marseille Université, F-13288 Marseille (France)

    2013-12-23T23:59:59.000Z

    Using scanning tunneling microscopy (STM), Auger electron spectroscopy, and low energy electron diffraction, we have observed a surprising complete dissolution at room temperature of one lead monolayer deposited by evaporation on an aluminum oxide thin film (?0.8?nm thick) previously grown on Ag (111). We have observed the quasi-instantaneous diffusion of the lead deposit through the oxide layer to the silver/oxide interface. After the diffusion process, lead atoms form a Moiré superstructure, which is characterized by STM through the oxide layer. This unexpected behavior puts in light the very weak interaction between the aluminum oxide and the silver substrate.

  14. High quality transparent conducting oxide thin films

    DOE Patents [OSTI]

    Gessert, Timothy A. (Conifer, CO); Duenow, Joel N. (Golden, CO); Barnes, Teresa (Evergreen, CO); Coutts, Timothy J. (Golden, CO)

    2012-08-28T23:59:59.000Z

    A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

  15. Study of lithium diffusion in RF sputtered Nickel/Vanadium mixed oxides thin films

    E-Print Network [OSTI]

    Artuso, Florinda

    Study of lithium diffusion in RF sputtered NickelÁ/Vanadium mixed oxides thin films F. Artuso a lithium insertion inside RF sputtered Ni/V mixed oxides thin films have been investigated employing, showed three steps clearly involved in the intercalation mechanism of lithium in the oxide films: (i

  16. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    DOE Patents [OSTI]

    Perkins, John (Boulder, CO); Van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David (Evergreen, CO); Taylor, Matthew (Golden, CO); Neuman, George A. (Holland, MI); Luten, Henry A. (Holland, MI); Forgette, Jeffrey A. (Hudsonville, MI); Anderson, John S. (Holland, MI)

    2010-07-13T23:59:59.000Z

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  17. Thin film preparation and interfacial reaction study of solid oxide fuel cell materials

    SciTech Connect (OSTI)

    Chen, Chiehcheng.

    1992-01-01T23:59:59.000Z

    Solid oxide fuel cells (SOFC's) operate at 1000 C and their components are processed at even higher temperatures. It is generally desirable to reduce the operating and processing temperatures of SOFC's to make them competitive with other types of fuel cells and to avoid the interactions and interdiffusion between cell components. This can be achieved by either developing a technology to produce thin film electrolytes, or by developing new electrolyte and electrode materials with reduced interaction, lower interfacial resistance. The synthesis and characterization of (Ce-O2)0.8(Sm01.5)0.2 thin films from polymeric precursors is discussed. The reaction mechanism of the precursors and important parameters for making dense, crack-free films were investigated. The cathode/electrolyte interactions and their expected impact on SOFC performance are addressed. The cathode characteristics and cathode/electrolyte interaction of various perovskites are studied. The impact of interfacial reactions on cell performance is investigated. The electrode characteristics of dense La0.6Sr0.4Co0.2Fe0.8O3 (LSCF) thin film produced by polymeric precursors are presented. The electrode resistance and characteristics of the electrode (dense)/electrolyte interface are studied. The effect of reactions and interdiffusion on interfacial resistance are discussed. A potential method for making dense ZrO2 films at relatively low temperatures by plasma-enhanced chemical vapor deposition is presented. The deposition parameters and characterization of ZrO2 film are reported.

  18. Phase Transformations in Pulsed Laser Deposited Nanocrystalline Tin Oxide Thin Films

    E-Print Network [OSTI]

    Reid, Scott A.

    Phase Transformations in Pulsed Laser Deposited Nanocrystalline Tin Oxide Thin Films Haiyan Fan August 20, 2002. Revised Manuscript Received November 11, 2002 Thin SnOx films have been synthesized of reducing gases,1-3 and thin films have been synthesized by various means including evapora- tion,4

  19. Studies on nickel-tungsten oxide thin films

    SciTech Connect (OSTI)

    Usha, K. S. [Department of Physics, Alagappa University, Karaikudi - 630 004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi - 630 004 (India); Sanjeeviraja, C. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi - 630 004 (India)

    2014-10-15T23:59:59.000Z

    Nickel-Tungsten oxide (95:5) thin films were prepared by rf sputtering at 200W rf power with various substrate temperatures. X-ray diffraction study reveals the amorphous nature of films. The substrate temperature induced decrease in energy band gap with a maximum transmittance of 71%1 was observed. The Micro-Raman study shows broad peaks at 560 cm{sup ?1} and 1100 cm{sup ?1} correspond to Ni-O vibration and the peak at 860 cm{sup ?1} can be assigned to the vibration of W-O-W bond. Photoluminescence spectra show two peaks centered on 420 nm and 485 nm corresponding to the band edge emission and vacancies created due to the addition of tungsten, respectively.

  20. Transparent and Conductive Carbon Nanotube Multilayer Thin Films Suitable as an Indium Tin Oxide Replacement 

    E-Print Network [OSTI]

    Park, Yong Tae

    2012-07-16T23:59:59.000Z

    Transparent electrodes made from metal oxides suffer from poor flexibility and durability. Highly transparent and electrically conductive thin films based on carbon nanotubes (CNTs) were assembled as a potential indium tin oxide (ITO) replacement...

  1. Properties of thin film europium oxide by x-ray magnetic circular dichroism Johnathon Holroyda)

    E-Print Network [OSTI]

    Idzerda, Yves

    Properties of thin film europium oxide by x-ray magnetic circular dichroism Johnathon Holroyda Institute of Physics. DOI: 10.1063/1.1688653 I. INTRODUCTION Europium oxide is optically transparent

  2. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

    1998-05-19T23:59:59.000Z

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

  3. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

    1998-01-01T23:59:59.000Z

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  4. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

    1999-01-01T23:59:59.000Z

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  5. Femtosecond pump-probe studies of reduced graphene oxide thin films

    E-Print Network [OSTI]

    Ruzicka, Brian Andrew; Werake, Lalani Kumari; Zhao, Hui; Wang, Shuai; Loh, Kian Ping

    2010-04-01T23:59:59.000Z

    The dynamics of photocarriers in reduced graphene oxide thin films is studied by using ultrafast pump-probe spectroscopy. Time dependent differential transmissions are measured with sample temperatures ranging from 9 to 300 K. At each sample...

  6. Near-infrared photodetector consisting of J-aggregating cyanine dye and metal oxide thin films

    E-Print Network [OSTI]

    Osedach, Timothy P.

    We demonstrate a near-infrared photodetector that consists of a thin film of the J-aggregating cyanine dye, U3, and transparent metal-oxide charge transport layers. The high absorption coefficient of the U3 film, combined ...

  7. Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering

    E-Print Network [OSTI]

    Lee, Yun Seog

    Cuprous oxide (Cu[subscript 2]O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu[subscript 2]O thin films deposited by reactive dc magnetron ...

  8. Defect engineering of cuprous oxide thin-films for photovoltaic applications

    E-Print Network [OSTI]

    Lee, Yun Seog

    2013-01-01T23:59:59.000Z

    Thin-film solar cells are promising for renewable-energy applications due to their low material usage and inexpensive manufacturing potential, making them compatible with terawatts-level deployment. Cuprous oxide (Cu?O) ...

  9. Properties and sensor performance of zinc oxide thin films

    E-Print Network [OSTI]

    Min, Yongki, 1965-

    2003-01-01T23:59:59.000Z

    Reactively sputtered ZnO thin film gas sensors were fabricated onto Si wafers. The atmosphere dependent electrical response of the ZnO micro arrays was examined. The effects of processing conditions on the properties and ...

  10. AN INNOVATIVE TECHNIQUE FOR THIN FILM INTERFACE TOUGHNESS RESEARCH

    SciTech Connect (OSTI)

    Wang, J.J.

    2004-11-01T23:59:59.000Z

    A material configuration of central importance in microelectronics, optoelectronics, and thermal barrier coating technology is a thin or thick film of one material deposited onto a substrate of a different material. Fabrication of such a structure inevitably gives rise to stress in the film due to lattice mismatch, differing coefficients of thermal expansion, chemical reactions, or other physical effects. Therefore, in general, the weakest link in this composite system often resides at the interface between the film and substrate. In order to make multi-layered electronic devices and structural composites with long-term reliability, the fracture behavior of the material interfaces must be known. Unfortunately, none of the state-of-the-art testing methods for evaluating interface fracture toughness is fully conformed to fracture mechanics theory, as is evident from the severe scatter in the existing data and the procedure dependence in film/coating evaluation methods. This project is intended to address the problems associated with this deficiency and offers an innovative testing procedure for the determination of interface fracture toughness applicable to coating materials in general. This new approach and the associated bi-material fracture mechanics development proposed for evaluating interface fracture toughness are described herein. The effort includes development of specimen configuration and related instrumentation set-up, testing procedures, postmortem examination, and analytical evaluation. A spiral notch torsion fracture toughness test system was utilized. The objective of the testing procedure described is to enable the development of new coating materials by providing a reliable method for use in assessing their performance. This innovative technology for measuring interface toughness was demonstrated for oxide scales formed on high-temperature alloys of MA956. The estimated energy release rate (in terms of J-integral) at the interface of the alumina scale and MA956 substrate is 3.7 N-m/m{sup 2}, and the estimated equivalent Mode I fracture toughness is 1.1 MPa {radical}m. This innovative technique is expected to greatly assist the development of coating materials with improved protective capabilities and provide a reliable method for use in assessing material performance.

  11. Formation of thin film Tl-based high-Tc? superconducting oxides from amorphous alloy precursors

    E-Print Network [OSTI]

    Williams, John Charles

    1991-01-01T23:59:59.000Z

    and satisfying. John Charles Williams TABLE OF CONTENTS ABSTRACT. ACKNOWLEDGMENTS. TABLE OF CONTENTS. LIST OF TABLES. LIST OF FIGURES. I. INTRODUCTION. 1v v vu1 A. Properties of Perovskites and Copper-Oxide Superconductors. . . . . . . . . 2 1.... Fundamental Properties. 2. Perovskite Crystal Structure. 3. Perovskite Crystal Structure Modifications 4, Structure of Thallate Superconductors . . B. Thallium-based Thin Film Superconductors. . . . 1. Tl-based Thin Film Production Methods. . . . 2...

  12. Nanostructured ceria based thin films ({<=}1 {mu}m) As cathode/electrolyte interfaces

    SciTech Connect (OSTI)

    Hierso, J. [Laboratoire de Chimie de la Matiere Condensee de Paris, Universite Paris 6-UMR 7574-College de France, 11 Place Marcelin Berthelot, 75005 Paris (France); Boy, P.; Valle, K. [CEA-Le Ripault, LSCG, BP 15, 37000 Monts (France); Vulliet, J.; Blein, F. [CEA-Le Ripault, LCCA, BP 15, 37000 Monts (France); Laberty-Robert, Ch., E-mail: christel.laberty@upmc.fr [Laboratoire de Chimie de la Matiere Condensee de Paris, Universite Paris 6-UMR 7574-College de France, 11 Place Marcelin Berthelot, 75005 Paris (France); Sanchez, C. [Laboratoire de Chimie de la Matiere Condensee de Paris, Universite Paris 6-UMR 7574-College de France, 11 Place Marcelin Berthelot, 75005 Paris (France)

    2013-01-15T23:59:59.000Z

    Gadolinium doped cerium oxide (CGO: Ce{sub 0,9}Gd{sub 0,1}O{sub 2-{delta}}) films were used as an oxygen anion diffusion layer at the cathode/electrolyte interface of Solid Oxide Fuel Cells (SOFCs), between LSCF (lanthanum strontium cobalt ferrite) and YSZ (yttria-stabilized zirconia). Thin ({approx}100 nm) and thick ({approx}700 nm) mesoporous CGO layers were synthesized through a sol-gel process including organic template coupled with the dip-coating method. Structural and microstructural characterizations were performed, highlighting a well-bonded crystalline CGO nanoparticles network which delineates a 3-D inter-connected mesoporous network. Their electrical behaviors were investigated by impedance spectroscopy analysis of YSZ/mesoporous-CGO/LSCF half-cell. Anode-supported SOFCs, operating at 800 Degree-Sign C, with either dense or mesoporous CGO dip-coated interlayers were also fabricated [NiO-YSZ anode/YSZ/CGO/LSCF cathode]. The impact of the mesoporous CGO interlayers on SOFCs performances was investigated by galvanostatic analysis and compared to the behavior of a dense CGO interlayer. The polarization curves revealed an enhancement in the electrical performance of the cell, which is assigned to a decrease of the polarization resistance at the cathode/electrolyte interface. The integrity and connectivity of the CGO nanoparticles bonded network facilitates O{sup 2-} transport across the interface. - Graphical abstract: Thin and thick CGO films have been prepared through a sol-gel process and their potential application as SOFC cathode/electrolyte interlayer in SOFC has been investigated. Highlights: Black-Right-Pointing-Pointer Mesoporous ceria based thin films exhibit interesting performances for Solid Oxide Fuel Cell. Black-Right-Pointing-Pointer Mesoporous films were synthesized through the sol-gel process combined with the dip-coating. Black-Right-Pointing-Pointer Integrity and connectivity of the nanoparticles facilitates O{sup 2-} transport across the interface.

  13. Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors

    SciTech Connect (OSTI)

    Xu, Rui; He, Jian [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Song, Yang [Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Li, Wei [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Zaslavsky, A. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Paine, D. C., E-mail: David-Paine@brown.edu [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2014-09-01T23:59:59.000Z

    We describe an approach to reduce the contact resistance at compositional conducting/semiconducting indium-zinc-oxide (IZO) homojunctions used for contacts in thin film transistors (TFTs). By introducing silver nanoparticles (Ag NPs) at the homojunction interface between the conducting IZO electrodes and the amorphous IZO channel, we reduce the specific contact resistance, obtained by transmission line model measurements, down to ?10{sup ?2?}??cm{sup 2}, ?3 orders of magnitude lower than either NP-free homojunction contacts or solid Ag metal contacts. The resulting back-gated TFTs with Ag NP contacts exhibit good field effect mobility of ?27?cm{sup 2}/V?s and an on/off ratio >10{sup 7}. We attribute the improved contact resistance to electric field concentration by the Ag NPs.

  14. Synthesis and Characterization of Functional Nanostructured Zinc Oxide Thin Films

    E-Print Network [OSTI]

    Chow, Lee

    and development of alternative energy technologies, such as low cost flat-panel solar cells thin film devices and structural requirements of their applications in gas sensors and solar cells. The rapid photothermalV) and GaN (21eV), is of interest for various high tech applications, such as optical devices (1), solar

  15. Electrodeposited ruthenium oxide thin films for supercapacitor: Effect of surface treatments

    E-Print Network [OSTI]

    Chow, Lee

    Electrodeposited ruthenium oxide thin films for supercapacitor: Effect of surface treatments V Supercapacitor is similar to a regular capacitor in operation; however, it offers a very high capacitance for supercapacitor should be able to get oxidized and reduce reversibility between various oxidation states [1

  16. Effect of thermal annealing on the properties of transparent conductive In–Ga–Zn oxide thin films

    SciTech Connect (OSTI)

    Li, Ling [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, China and School of Information Science and Engineering, Shandong University, Jinan 250100 (China); Fan, Lina; Li, Yanhuai; Song, Zhongxiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: chlliu@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049 (China); Liu, Chunliang, E-mail: mafei@mail.xjtu.edu.cn, E-mail: chlliu@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049 (China)

    2014-03-15T23:59:59.000Z

    Amorphous In–Ga–Zn oxide (IGZO) thin films were prepared using radio frequency magnetron sputtering at room temperature. Upon thermal annealing at temperatures even up to 500?°C, the amorphous characteristics were still maintained, but the electronic properties could be considerably enhanced. This could be ascribed to the increased optical band gap and the increased oxygen vacancies, as corroborated by the microstructure characterizations. In addition, the surface became smoother upon thermal annealing, guaranteeing good interface contact between electrode and a-IGZO. The optical transmittance at 400–800?nm exceeded 90% for all samples. All in all, thermal annealing at appropriate temperatures is expected to improve the performances of relevant a-IGZO thin film transistors.

  17. Characterization of the Electronic and Chemical Structure at the Thin Film Solar Cell Interfaces: June 2005 -- June 2009

    SciTech Connect (OSTI)

    Heske, C.

    2009-09-01T23:59:59.000Z

    Study using photoelectron spectroscopy, inverse photoemission, and X-ray absorption and emission to derive the electronic structure of interfaces in CIGSS and CdTe thin-film solar cells.

  18. Nanostructured Thin Film Electrolyte for Thin Film Solid Oxide Fuel Cells

    E-Print Network [OSTI]

    Cho, Sungmee

    2012-10-19T23:59:59.000Z

    Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because they are clean, reliable, and almost entirely pollution-free. SOFCs have flexible fuel selections compared with other fuel cell technologies. The main...

  19. Nanostructured Thin Film Electrolyte for Thin Film Solid Oxide Fuel Cells 

    E-Print Network [OSTI]

    Cho, Sungmee

    2012-10-19T23:59:59.000Z

    Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because they are clean, reliable, and almost entirely pollution-free. SOFCs have flexible fuel selections compared with other fuel cell technologies. The main...

  20. Analytica Chimica Acta 573574 (2006) 913 Metal oxide thin films as sensing layers for ozone detection

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    Analytica Chimica Acta 573­574 (2006) 9­13 Metal oxide thin films as sensing layers for ozone. Their structural, electrical and ozone sensing properties were analyzed. Structural investigations carried out with ultraviolet light and subsequent oxidation in ozone atmosphere at room temperature. © 2006 Elsevier B.V. All

  1. The Electrical and Band-Gap Properties of Amorphous Zinc-Indium-Tin Oxide Thin Films

    E-Print Network [OSTI]

    Shahriar, Selim

    MRSEC The Electrical and Band-Gap Properties of Amorphous Zinc-Indium-Tin Oxide Thin Films D Science & Engineering Center For zinc-indium-tin oxide (ZITO) films, grown by pulsed-laser deposition was replaced by substitution with zinc and tin in equal molar proportions (co-substitution). All ZITO films

  2. Epitaxial thin films

    DOE Patents [OSTI]

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25T23:59:59.000Z

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  3. Vibrational spectra of CO adsorbed on oxide thin films: A tool to probe the surface defects and phase changes of oxide thin films

    SciTech Connect (OSTI)

    Savara, Aditya, E-mail: savaraa@ornl.gov [Chemical Sciences Division, Oak Ridge National Lab, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831 (United States)

    2014-03-15T23:59:59.000Z

    Thin films of iron oxide were grown on Pt(111) single crystals using cycles of physical vapor deposition of iron followed by oxidative annealing in an ultrahigh vacuum apparatus. Two procedures were utilized for film growth of ?15–30 ML thick films, where both procedures involved sequential deposition+oxidation cycles. In procedure 1, the iron oxide film was fully grown via sequential deposition+oxidation cycles, and then the fully grown film was exposed to a CO flux equivalent to 8 × 10{sup ?7} millibars, and a vibrational spectrum of adsorbed CO was obtained using infrared reflection-absorption spectroscopy. The vibrational spectra of adsorbed CO from multiple preparations using procedure 1 show changes in the film termination structure and/or chemical nature of the surface defects—some of which are correlated with another phase that forms (“phase B”), even before enough of phase B has formed to be easily detected using low energy electron diffraction (LEED). During procedure 2, CO vibrational spectra were obtained between deposition+oxidation cycles, and these spectra show that the film termination structure and/or chemical nature of the surface defects changed as a function of sequential deposition+oxidation cycles. The authors conclude that measurement of vibrational spectra of adsorbed CO on oxide thin films provides a sensitive tool to probe chemical changes of defects on the surface and can thus complement LEED techniques by probing changes not visible by LEED. Increased use of vibrational spectra of adsorbed CO on thin films would enable better comparisons between films grown with different procedures and by different groups.

  4. Damp-Heat Induced Degradation of Transparent Conducting Oxides for Thin Film Solar Cells (Presentation)

    SciTech Connect (OSTI)

    Pern, J.; Noufi, R.; Li, X.; DeHart, C.; To, B.

    2008-05-01T23:59:59.000Z

    The objectives are: (1) To achieve a high long-term performance reliability for the thin-film CIGS PV modules with more stable materials, device structure designs, and moisture-resistant encapsulation materials and schemes; (2) to evaluate the DH stability of various transparent conducting oxides (TCOs); (3) to identify the degradation mechanisms and quantify degradation rates; (4) to seek chemical and/or physical mitigation methods, and explore new materials. It's important to note that direct exposure to DH represents an extreme condition that a well-encapsulated thin film PV module may never experience.

  5. Photo-modulated thin film transistor based on dynamic charge transfer within quantum-dots-InGaZnO interface

    SciTech Connect (OSTI)

    Liu, Xiang [Electronic Science and Engineering School, Southeast University, Nanjing (China); National Center for Nanoscience and Technology, Beijing (China); Yang, Xiaoxia; Liu, Mingju [National Center for Nanoscience and Technology, Beijing (China); Tao, Zhi; Wei, Lei, E-mail: lw@seu.edu.cn; Li, Chi, E-mail: lichi@seu.edu.cn; Zhang, Xiaobing; Wang, Baoping [Electronic Science and Engineering School, Southeast University, Nanjing (China); Dai, Qing, E-mail: daiq@nanoctr.cn [National Center for Nanoscience and Technology, Beijing (China); London Center for Nanotechnology, University College London, London WC1H 0AH (United Kingdom); Nathan, Arokia [Electronic Science and Engineering School, Southeast University, Nanjing (China); London Center for Nanotechnology, University College London, London WC1H 0AH (United Kingdom)

    2014-03-17T23:59:59.000Z

    The temporal development of next-generation photo-induced transistor across semiconductor quantum dots and Zn-related oxide thin film is reported in this paper. Through the dynamic charge transfer in the interface between these two key components, the responsibility of photocurrent can be amplified for scales of times (?10{sup 4}?A/W 450?nm) by the electron injection from excited quantum dots to InGaZnO thin film. And this photo-transistor has a broader waveband (from ultraviolet to visible light) optical sensitivity compared with other Zn-related oxide photoelectric device. Moreover, persistent photoconductivity effect can be diminished in visible waveband which lead to a significant improvement in the device's relaxation time from visible illuminated to dark state due to the ultrafast quenching of quantum dots. With other inherent properties such as integrated circuit compatible, low off-state current and high external quantum efficiency resolution, it has a great potential in the photoelectric device application, such as photodetector, phototransistor, and sensor array.

  6. Characterization of a high temperature superconducting oxide thin-film RF SQUID

    SciTech Connect (OSTI)

    Daly, K.P.; Silver, A.H.; Simon, R.W.; Platt, C.E.; Lee, A.E.; Wire, M.S.; Zimmerman, J.E.

    1989-03-01T23:59:59.000Z

    The authors have successfully fabricated and operated RF SQUIDS made from thin-films of the high temperature superconducting oxide ErBa/sub 2/Cu/sub 3/O/sub 7-x/. The ideal triangular quantum interference pattern characteristic of RF SQUIDS is observed. The performance of a particular device, operating between 60 and 65K, is described in detail.

  7. Junctionless thin-film ferroelectric oxides for photovoltaic energy Farnood K. Rezaie*a

    E-Print Network [OSTI]

    Peale, Robert E.

    , and the conditions for ideal poling. Photovoltaic characterization of KBNNO cells will determine the efficiency, and cell fill factor (FF). Keywords: Bulk photovoltaics, Perovskite oxide, Ferroelectric thin-film, KBNNO. This creates opportunities for innovation in photovoltaic cells and state of the art optoelectronic devices

  8. High-Temperature Thermoelectric Characterization of IIIV Semiconductor Thin Films by Oxide Bonding

    E-Print Network [OSTI]

    High-Temperature Thermoelectric Characterization of III­V Semiconductor Thin Films by Oxide Bonding and measurement method utilizing a SiO2­SiO2 covalent bonding technique is presented for high-temperature surface passivation, and metallization with a Ti-W-N diffusion barrier. A thermoelectric material, thin

  9. Naphthacene Based Organic Thin Film Transistor With Rare Earth Oxide

    SciTech Connect (OSTI)

    Konwar, K. [Department of Physics, Digboi College, Digboi-786171, Assam (India); Baishya, B. [Department of Physics, Dibrugarh University, Dibrugarh-786004, Assam (India)

    2010-12-01T23:59:59.000Z

    Naphthacene based organic thin film transistors (OTFTs) have been fabricated using La{sub 2}O{sub 3}, as the gate insulator. All the OTFTs have been fabricated by the process of thermal evaporation in vacuum on perfectly cleaned glass substrates with aluminium as source-drain and gate electrodes. The naphthacene film morphology on the glass substrate has been studied by XRD and found to be polycrystalline in nature. The field effect mobility, output resistance, amplification factor, transconductance and gain bandwidth product of the OTFTs have been calculated by using theoretical TFT model. The highest value of field effect mobility is found to be 0.07x10{sup -3} cm{sup 2}V{sup -1}s{sup -1} for the devices annealed in vacuum at 90 deg. C for 5 hours.

  10. Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

    SciTech Connect (OSTI)

    Allen, T. G., E-mail: thomas.allen@anu.edu.au; Cuevas, A. [Research School of Engineering, Australian National University, Canberra 0200 (Australia)

    2014-07-21T23:59:59.000Z

    This paper proposes the application of gallium oxide (Ga{sub 2}O{sub 3}) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga{sub 2}O{sub 3} films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O{sub 3}) as the reactants. Surface recombination velocities as low as 6.1?cm/s have been recorded with films less than 4.5?nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2?Å/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga{sub 2}O{sub 3} interface has been found to be approximately 0.5?eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9?eV.

  11. Spin Coated Plasmonic Nanoparticle Interfaces for Photocurrent Enhancement in Thin Film Si Solar Cells

    E-Print Network [OSTI]

    Israelowitz, Miriam; Cong, Tao; Sureshkumar, Radhakrishna

    2013-01-01T23:59:59.000Z

    Nanoparticle (NP) arrays of noble metals strongly absorb light in the visible to infrared wavelengths through resonant interactions between the incident electromagnetic field and the metal's free electron plasma. Such plasmonic interfaces enhance light absorption and photocurrent in solar cells. We report a cost effective and scalable room temperature/pressure spin-coating route to fabricate broadband plasmonic interfaces consisting of silver NPs. The NP interface yields photocurrent enhancement (PE) in thin film silicon devices by up to 200% which is significantly greater than previously reported values. For coatings produced from Ag nanoink containing particles with average diameter of 40 nm, an optimal NP surface coverage of 7% was observed. Scanning electron microscopy of interface morphologies revealed that for low surface coverage, particles are well-separated, resulting in broadband PE. At higher surface coverage, formation of particle strings and clusters caused red-shifting of the PE peak and a narro...

  12. Doped tantalum oxide high K dielectric thin films

    E-Print Network [OSTI]

    Donnelly, Joseph Patrick

    2000-01-01T23:59:59.000Z

    , it was doped with varying amounts of titanium oxide, aluminum oxide and silicon dioxide. The composite oxide films were deposited by reactive radio frequency (RF) cc-sputtering of two targets in a variety of oxygen and argon feed gas mixtures. The targets used...

  13. Solid Electrolyte/Electrode Interfaces: Atomistic Behavior Analyzed Via UHV-AFM, Surface Spectroscopies, and Computer Simulations Computational and Experimental Studies of the Cathode/Electrolyte Interface in Oxide Thin Film Batteries

    SciTech Connect (OSTI)

    Garofalini, Stephen H

    2012-03-21T23:59:59.000Z

    The goals of the research were to understand the structural, dynamic, and chemical properties of solid electrolyte surfaces and the cathode/electrolyte interface at an atomistic and nanometer level using both computational and experimental techniques.

  14. INTERFERENCE Interference from Thin Films

    E-Print Network [OSTI]

    La Rosa, Andres H.

    INTERFERENCE Interference from Thin Films Lecture notes La Rosa Portland State University PH-213 through, a sheet of glass #12;Out of phase #12;In phase #12;#12;Interference from thin films Key reasoning for analyzing interference in a thin film: Waves undergo phase shift due to i) reflections at a interface

  15. Heterojunction thin films based on multifunctional metal oxides for photovoltaic application

    SciTech Connect (OSTI)

    Prabhu, M.; Soundararajan, N.; Ramachandran, K. [School of Physics, Madurai Kamaraj University, Madurai - 625021 (India); Marikkannan, M.; Mayandi, J. [School of Chemistry, Madurai Kamaraj University, Madurai - 625021 (India)

    2014-04-24T23:59:59.000Z

    Metal oxides based multifunctional heterojunction thin films of ZnO/SnO{sub 2} and ZnO/SnO{sub 2}/CuO QDs were prepared by spin-coating technique. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The optical absorption studies revealed that the film thickness has considerable effect on the band gap values and is found to be in the range of 3.73–3.48 eV. The photoluminescence spectra showed several weak visible emission peaks related to the deep level defects (450-575 nm). Finally, the current density-voltage (J-V) characteristic of ZnO/SnO{sub 2}/CuO QDs (ZSCI) based heterojunction thin film coated on ITO is also reported.

  16. The solution growth route and characterization of electrochromic tungsten oxide thin films

    SciTech Connect (OSTI)

    Todorovski, Toni [Institute of Chemistry, Faculty of Natural Sciences and Mathematics, Sts. Cyril and Methodius University, PO Box 162, Arhimedova 5, 1000 Skopje (Macedonia, The Former Yugoslav Republic of); Najdoski, Metodija [Institute of Chemistry, Faculty of Natural Sciences and Mathematics, Sts. Cyril and Methodius University, PO Box 162, Arhimedova 5, 1000 Skopje (Macedonia, The Former Yugoslav Republic of)], E-mail: metonajd@iunona.pmf.ukim.edu.mk

    2007-12-04T23:59:59.000Z

    Electrochromic tungsten oxide thin films were prepared by using an aqueous solution of Na{sub 2}WO{sub 4}.2H{sub 2}O and dimethyl sulfate. Various techniques were used for the characterization of the films such as X-ray diffraction, cyclic voltammetry, SEM analysis and VIS-spectroscopy. The thin film durability was tested in an aqueous solution of LiClO{sub 4} (0.1 mol/dm{sup 3}) for about 7000 cycles followed by cyclic voltammetry. No significant changes in the cyclic voltammograms were found, thus proving the high durability of the films. The optical transmittance spectra of coloured and bleached states showed significant change in the transmittance, which makes these films favorable for electrochromic devices.

  17. Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

    SciTech Connect (OSTI)

    Cho, Byungsu [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Samsung Display Co. Ltd., Tangjeong, Chungcheongnam-Do 336-741 (Korea, Republic of); Choi, Yonghyuk; Shin, Seokyoon [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Jeon, Heeyoung [Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Seo, Hyungtak, E-mail: hseo@ajou.ac.kr [Department of Materials Science and Engineering and Energy Systems Research, Ajou University, Suwon 443-739 (Korea, Republic of); Jeon, Hyeongtag, E-mail: hjeon@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2014-01-27T23:59:59.000Z

    We demonstrate an enhanced electrical stability through a Ti oxide (TiO{sub x}) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiO{sub x} thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiO{sub x} depend on the surface polarity change and electronic band structure evolution. This result indicates that TiO{sub x} on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters.

  18. Fluorine compounds for doping conductive oxide thin films

    DOE Patents [OSTI]

    Gessert, Tim; Li, Xiaonan; Barnes, Teresa M; Torres, Jr., Robert; Wyse, Carrie L

    2013-04-23T23:59:59.000Z

    Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

  19. Nanoengineered Thin Films for Solid Oxide Fuel Cells

    E-Print Network [OSTI]

    Su, Qing

    2013-11-21T23:59:59.000Z

    Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because of their high energy efficiency, flexible fuel selections and clean energy conversion. To avoid cell cracking and formation of non-conducting compounds...

  20. Nanoengineered Thin Films for Solid Oxide Fuel Cells 

    E-Print Network [OSTI]

    Su, Qing

    2013-11-21T23:59:59.000Z

    Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because of their high energy efficiency, flexible fuel selections and clean energy conversion. To avoid cell cracking and formation of non-conducting compounds...

  1. Optimal composition of europium gallium oxide thin films for device applications

    SciTech Connect (OSTI)

    Wellenius, P.; Muth, J. F. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Smith, E. R. [Kratos Defense and Security Solutions, Inc., 5030 Bradford Drive, Huntsville, Alabama 35805 (United States); LeBoeuf, S. M. [Valencell, Inc., 920 Main Campus Drive, Raleigh, North Carolina 27615 (United States); Everitt, H. O. [Army Aviation and Missile RD and E Center, Redstone Arsenal, Alabama 35898 (United States) and Department of Physics, Duke University, Durham, North Carolina 27708 (United States)

    2010-05-15T23:59:59.000Z

    Europium gallium oxide (Eu{sub x}Ga{sub 1-x}){sub 2}O{sub 3} thin films were deposited on sapphire substrates by pulsed laser deposition with varying Eu content from x=2.4 to 20 mol %. The optical and physical effects of high europium concentration on these thin films were studied using photoluminescence (PL) spectroscopy, x-ray diffraction (XRD), and Rutherford backscattering spectrometry. PL spectra demonstrate that emission due to the {sup 5}D{sub 0} to {sup 7}F{sub J} transitions in Eu{sup 3+} grows linearly with Eu content up to 10 mol %. Time-resolved PL indicates decay parameters remain similar for films with up to 10 mol % Eu. At 20 mol %, however, PL intensity decreases substantially and PL decay accelerates, indicative of parasitic energy transfer processes. XRD shows films to be polycrystalline and beta-phase for low Eu compositions. Increasing Eu content beyond 5 mol % does not continue to modify the film structure and thus, changes in PL spectra and decay cannot be attributed to structural changes in the host. These data indicate the optimal doping for optoelectronic devices based on (Eu{sub x}Ga{sub 1-x}){sub 2}O{sub 3} thin films is between 5 and 10 mol %.

  2. Nanostructured thin films for solid oxide fuel cells

    E-Print Network [OSTI]

    Yoon, Jongsik

    2009-05-15T23:59:59.000Z

    in order to facilitate rapid mass transport of reactant gas to the reaction site. Numerous doped oxides have been studied for zirconia based SOFCs and the most common materials for cathodes are perovskite-type lanthanum strontium manganite, La 1-x Sr x... Fig.1.3. Schematic diagram of SOFC operating on hydrogen fuel 1.3.1 History of SOFCs Solid oxide electrolytes were first investigated by Emil Baur and his colleague H. Preis in the late 1930s using lanthanum, yttrium, cerium, tungsten...

  3. Quantification of thin film crystallographic orientation using X-ray diffraction with an area detector

    E-Print Network [OSTI]

    Baker, Jessica L

    2010-01-01T23:59:59.000Z

    elastic  properties of Au thin films by X?ray diffraction interface in  polythiophene thin?film transistors.  Nat copper  phthalocyanine thin films evaporated on amorphous 

  4. Sputtered Nickel Oxide Thin Film for Efficient Hole Transport Layer in Polymer-Fullerene Bulk-Heterojunction Organic Solar Cell

    SciTech Connect (OSTI)

    Widjonarko, N. E.; Ratcliff, E. L.; Perkins, C. L.; Sigdel, A. K.; Zakutayev, A.; Ndione, P. F.; Gillaspie, D. T.; Ginley, D. S.; Olson, D. C.; Berry, J. J.

    2012-03-01T23:59:59.000Z

    Bulk-heterojunction (BHJ) organic photovoltaics (OPV) are very promising thin film renewable energy conversion technologies due to low production cost by high-throughput roll-to-roll manufacturing, an expansive list of compatible materials, and flexible device fabrication. An important aspect of OPV device efficiency is good contact engineering. The use of oxide thin films for this application offers increased design flexibility and improved chemical stability. Here we present our investigation of radio frequency magnetron sputtered nickel oxide (NiO{sub x}) deposited from oxide targets as an efficient, easily scalable hole transport layer (HTL) with variable work-function, ranging from 4.8 to 5.8 eV. Differences in HTL work-function were not found to result in statistically significant changes in open circuit voltage (V{sub oc}) for poly(3-hexylthiophene):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (P3HT:PCBM) BHJ device. Ultraviolet photoemission spectroscopy (UPS) characterization of the NiO{sub x} film and its interface with the polymer shows Fermi level alignment of the polymer with the NiO{sub x} film. UPS of the blend also demonstrates Fermi level alignment of the organic active layer with the HTL, consistent with the lack of correlation between V{sub oc} and HTL work-function. Instead, trends in j{sub sc}, V{sub oc}, and thus overall device performance are related to the surface treatment of the HTL prior to active layer deposition through changes in active layer thickness.

  5. Mechanisms of Zinc Oxide Nanocrystalline Thin Film Formation by Thermal Degradation of Metal-Loaded Hydrogels

    E-Print Network [OSTI]

    electrode in flat- panel displays,1 solar cells, and thin-film transistors.2,3 Other recent reports account

  6. Co-sputtered Aluminum Doped Zinc Oxide Thin Film as Transparent Anode for Organic Light-emitting Diodes

    E-Print Network [OSTI]

    Co-sputtered Aluminum Doped Zinc Oxide Thin Film as Transparent Anode for Organic Light and Technology, Clear Water Bay, Kowloon, Hong Kong, China ABSTRACT Aluminum doped zinc oxide (AZO that MTDATA matches better with AZO than CuPc, which served as hole injection layer. Keywords: Aluminum doped

  7. Effect of silver incorporation in phase formation and band gap tuning of tungsten oxide thin films

    SciTech Connect (OSTI)

    Jolly Bose, R.; Kumar, R. Vinod; Sudheer, S. K.; Mahadevan Pillai, V. P. [Department of Optoelectronics, University of Kerala, Kariyavattom, Thiruvananthapuram, Kerala 695581 (India); Reddy, V. R.; Ganesan, V. [UGC - DAE Consortium for Scientific Research, Khandwa Road, Indore 452017, Madhyapradesh (India)

    2012-12-01T23:59:59.000Z

    Silver incorporated tungsten oxide thin films are prepared by RF magnetron sputtering technique. The effect of silver incorporation in micro structure evolution, phase enhancement, band gap tuning and other optical properties are investigated using techniques such as x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, and UV-Visible spectroscopy. Effect of silver addition in phase formation and band gap tuning of tungsten oxide thin films are investigated. It is found that the texturing and phase formation improves with enhancement in silver content. It is also found that as the silver incorporation enhances the thickness of the films increases at the same time the strain in the film decreases. Even without annealing the desired phase can be achieved by doping with silver. A broad band centered at the wavelength 437 nm is observed in the absorption spectra of tungsten oxide films of higher silver incorporation and this can be attributed to surface plasmon resonance of silver atoms present in the tungsten oxide matrix. The transmittance of the films is decreased with increase in silver content which can be due to increase in film thickness, enhancement of scattering, and absorption of light caused by the increase of grain size, surface roughness and porosity of films and enhanced absorption due to surface plasmon resonance of silver. It is found that silver can act as the seed for the growth of tungsten oxide grains and found that the grain size increases with silver content which in turn decreases the band gap of tungsten oxide from 3.14 eV to 2.70 eV.

  8. Electrochemical and electrochromic properties of niobium oxide thin films fabricated by pulsed laser deposition

    SciTech Connect (OSTI)

    Fu, Z.W.; Kong, J.J.; Qin, Q.Z.

    1999-10-01T23:59:59.000Z

    Niobium oxide thin films have been successfully fabricated on the indium-tin oxide coated glasses by pulsed laser deposition in an O{sub 3}/O{sub 2} gas mixture. Films are characterized by X-ray diffraction and Raman spectrometry. Electrochemical and electrochromic properties of Nb{sub 2}O{sub 5} films are examined by cyclic voltammogram and potential step coupled with an in situ charge-coupled device spectrophotometer. The unique characteristics of absorption spectra of Nb{sub 2}O{sub 5} films are observed for the first time, and the optical absorption from the trapped electrons in the surface states plays an important role in the electrochromic phenomenon.

  9. Cathodoluminescence Study of GadoliniumDoped Yttrium Oxide Thin Films Deposited By RadioFrequency Magnetron Sputtering

    E-Print Network [OSTI]

    Fitz-Gerald, James M.

    Cathodoluminescence Study of Gadolinium­Doped Yttrium Oxide Thin Films Deposited By Radio­Frequency (001) substrate using radio­frequency magnetron sputtering. Alternating layers of Y2O3 and Gd wereA/cm2 . Non- radiative decay via thermal pathways is suspected for the observed activator saturation

  10. In situ electro-mechanical experiments and mechanics modeling of tensile cracking in indium tin oxide thin films on polyimide substrates

    E-Print Network [OSTI]

    Li, Teng

    oxide thin films on polyimide substrates Cheng Peng,1 Zheng Jia,2 Dan Bianculli,1 Teng Li,2,a) and Jun thicknesses (200 and 80 nm) deposited on polyimide substrates inside a scanning electron microscope. The crack model, the cohesive toughness and fracture strength of ITO thin films and the ITO/polyimide interfacial

  11. Electrochromic properties of niobium oxide thin films prepared by DC magnetron sputtering

    SciTech Connect (OSTI)

    Yoshimura, Kazuki; Miki, Takeshi; Tanemura, Sakae [National Industrial Research Inst., Nagoya (Japan)

    1997-09-01T23:59:59.000Z

    Niobium oxide electrochromic thin films were prepared by reactive DC magnetron sputtering and their electrochromic properties for Li intercalation and durability were studied. Chronoamperometric analyses revealed that the extended space-charge limited model by Zhang et al. is applicable to Nb{sub 2}O{sub 5} films. Crystallized Nb{sub 2}O{sub 5} films showed excellent electrochromism and stability over many coloration-bleaching cycles. The best performance was obtained for films with a substrate temperature of 500 C and an oxygen flow rate of 10 sccm. Electrochromic materials enable dynamic control of the throughput of radiant energy, and play a significant role in energy-efficient smart windows in order to reduce the cooling and lighting costs of buildings.

  12. Fatigue failure in thin-film polysilicon is due to subcriticalcracking within the oxide layer

    SciTech Connect (OSTI)

    Alsem, D.H.; Muhlstein, C.L.; Stach, E.A.; Ritchie, R.O.

    2005-01-11T23:59:59.000Z

    It has been established that microelectromechanical systems (MEMS) created from polycrystalline silicon thin-films are subject to cyclic fatigue. Prior work by the authors has suggested that although bulk silicon is not susceptible to fatigue failure in ambient air, fatigue in micron-scale silicon is a result of a ''reaction-layer'' process, whereby high stresses induce a thickening of the post-release oxide at stress concentrations such as notches, which subsequently undergoes moisture-assisted cracking. However, there exists some controversy regarding the post-release oxide thickness of the samples used in the prior study. In this Letter, we present data from devices from a more recent fabrication run that confirm our prior observations. Additionally, new data from tests in high vacuum show that these devices do not fatigue when oxidation and moisture are suppressed. Each of these observations lends credence to the '''reaction-layer'' mechanism. Recent advances in the design of microelectromechanical systems (MEMS) have increased the demand for more reliable microscale structures. Although silicon is an effective and widely used structural material at the microscale, it is very brittle. Consequently, reliability is a limiting factor for commercial and defense applications. Since the surface to volume ratio of these structural films is very large, classical models for failure modes in bulk materials cannot always be applied. For example, whereas bulk silicon is immune to cyclic fatigue failure thin micron-scale structural films of silicon appear to be highly susceptible. It is clear that at these size scales, surface effects may become dominant in controlling mechanical properties. The main reliability issues for MEMS are stiction, fatigue and wear. Fatigue is important in cases where devices are subjected to a large number of loading cycles with amplitudes below their (single-cycle) fracture stress, which may arise due to vibrations intentionally induced in the structure (i.e. a resonator) or those which arise from the service environment. While the reliability of MEMS has received extensive attention, the physical mechanisms responsible for these failure modes have yet to be conclusively determined. This is particularly true for fatigue, where the mechanisms have been subject to intense debate. Recently we have proposed that the fatigue of micron-scale polysilicon is associated with stress-induced surface oxide thickening and moisture-assisted subcritical cracking in the amorphous SiO{sub 2} oxide layer (''reaction-layer'' fatigue). The mechanism of oxide thickening is as yet unknown, but is likely related to some form of stress-assisted diffusion. Allameh et al. suggest a complementary mechanism involving stress-assisted oxide thickening, caused by dissolution of the surface oxide which forms deep grooves that are sites for crack initiation. Kahn et al. have criticized these mechanisms and proposed that, instead, fatigue is caused by subcritical cracking due to contacting surface asperities in the compressive part of the cycle. To the authors' knowledge, there is no direct experimental observation of such asperity contact. Also, their model cannot explain why micron-scale silicon, and not bulk silicon, is susceptible to fatigue. Moreover, Kahn et al. do not acknowledge the role of stress-induced oxide thickening, which has been observed directly using TEM and indirectly using atomic-force microscope measurements by several investigators, and have questioned whether the materials utilized by Muhlstein et al. and Allameh et al. were representative due to the relatively thick oxide scales. Accordingly, the goal of the present research is to seek a definitive understanding of the physical mechanisms responsible for fatigue in polysilicon structural thin-films. Our approach is to combine on-chip testing methods with electron microscopy by fatiguing thin-film samples and observing them, in an unthinned condition, using high-voltage transmission electron microscopy (HVTEM). Two principal results are found from this work: (1

  13. High temperature thermoelectric characterization of III-V semiconductor thin films by oxide bonding

    E-Print Network [OSTI]

    Bowers, John

    bonding Je-Hyeong Bahka) , Gehong Zenga) , Joshua M. O. Zide b) , Hong Luc) , Rajeev Singhd) , Di Lianga bonding technique is developed for high temperature thermoelectric characterization of the thin film III-W-N diffusion barrier. A thermoelectric material, thin film ErAs:InGaAlAs metal/semiconductor nanocomposite

  14. Oxidation behavior of arc evaporated Al-Cr-Si-N thin films

    SciTech Connect (OSTI)

    Tritremmel, Christian; Daniel, Rostislav; Mitterer, Christian; Mayrhofer, Paul H.; Lechthaler, Markus; Polcik, Peter [Christian Doppler Laboratory for Advanced Hard Coatings, Department of Physical Metallurgy and Materials Testing, Montanuniversitaet Leoben, Franz-Josef-Strasse 18, A-8700 Leoben (Austria); Christian Doppler Laboratory for Application Oriented Coating Development, Department of Physical Metallurgy and Materials Testing, Montanuniversitaet Leoben, Franz-Josef-Strasse 18, A-8700 Leoben (Austria); OC Oerlikon Balzers AG, Iramali 18, LI-9496 Balzers (Liechtenstein); PLANSEE Composite Materials GmbH, Siebenbuergerstrasse 23, D-86983 Lechbruck am See (Germany)

    2012-11-15T23:59:59.000Z

    The impact of Al and Si on the oxidation behavior of Al-Cr-(Si)-N thin films synthesized by arc evaporation of powder metallurgically prepared Al{sub x}Cr{sub 1-x} targets with x = Al/(Al + Cr) of 0.5, 0.6, and 0.7 and (Al{sub 0.5}Cr{sub 0.5}){sub 1-z}Si{sub z} targets with Si contents of z = 0.05, 0.1, and 0.2 in N{sub 2} atmosphere was studied in detail by means of differential scanning calorimetry, thermogravimetric analysis (TGA), x-ray diffraction, and Raman spectroscopy. Dynamical measurements in synthetic air (up to 1440 Degree-Sign C) revealed the highest onset temperature of pronounced oxidation for nitride coatings prepared from the Al{sub 0.4}Cr{sub 0.4}Si{sub 0.2} target. Isothermal TGA at 1100, 1200, 1250, and 1300 Degree-Sign C highlight the pronounced improvement of the oxidation resistance of Al{sub x}Cr{sub 1-x}N coatings by the addition of Si. The results show that Si promotes the formation of a dense coating morphology as well as a dense oxide scale when exposed to air.

  15. Thin film ion conducting coating

    DOE Patents [OSTI]

    Goldner, Ronald B. (Lexington, MA); Haas, Terry (Sudbury, MA); Wong, Kwok-Keung (Watertown, MA); Seward, George (Arlington, MA)

    1989-01-01T23:59:59.000Z

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  16. TAPE CALENDERING MANUFACTURING PROCESS FOR MULTILAYER THIN-FILM SOLID OXIDE FUEL CELLS

    SciTech Connect (OSTI)

    Nguyen Minh; Kurt Montgomery

    2004-10-01T23:59:59.000Z

    This report summarizes the work performed by Hybrid Power Generation Systems, LLC during the Phases I and II under Contract DE-AC26-00NT40705 for the U. S. Department of Energy, National Energy Technology Laboratory (DOE/NETL) entitled ''Tape Calendering Manufacturing Process For Multilayer Thin-Film Solid Oxide Fuel Cells''. The main objective of this project was to develop the manufacturing process based on tape calendering for multilayer solid oxide fuel cells (SOFC's) using the unitized cell design concept and to demonstrate cell performance under specified operating conditions. Summarized in this report is the development and improvements to multilayer SOFC cells and the unitized cell design. Improvements to the multilayer SOFC cell were made in electrochemical performance, in both the anode and cathode, with cells demonstrating power densities of nearly 0.9 W/cm{sup 2} for 650 C operation and other cell configurations showing greater than 1.0 W/cm{sup 2} at 75% fuel utilization and 800 C. The unitized cell design was matured through design, analysis and development testing to a point that cell operation at greater than 70% fuel utilization was demonstrated at 800 C. The manufacturing process for both the multilayer cell and unitized cell design were assessed and refined, process maps were developed, forming approaches explored, and nondestructive evaluation (NDE) techniques examined.

  17. Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer

    E-Print Network [OSTI]

    Lu, Tianlin

    2012-07-16T23:59:59.000Z

    Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric current gain obtained...

  18. Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer 

    E-Print Network [OSTI]

    Lu, Tianlin

    2012-07-16T23:59:59.000Z

    Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric current gain obtained...

  19. Stability Issues of Transparent Conducting Oxides (TCOs) for Thin-Film Photovoltaics (Presentation)

    SciTech Connect (OSTI)

    Pern, J.

    2008-12-01T23:59:59.000Z

    Study of stability issues of TCOs for thin-film PV, including degradation of optical, electrical, and structural properties of TCOs in damp heat and required encapsulation to prevent moisture egress.

  20. Anti-reflection zinc oxide nanocones for higher efficiency thin-film silicon solar cells

    E-Print Network [OSTI]

    Mailoa, Jonathan P

    2012-01-01T23:59:59.000Z

    Thin film silicon solar cells, which are commonly made from microcrystalline silicon ([mu]c-Si) or amorphous silicon (a-Si), have been considered inexpensive alternatives to thick polycrystalline silicon (polysilicon) solar ...

  1. How Voltage Drops are Manifested by Lithium Ion Configurations at Interfaces and in Thin Films on Battery Electrodes

    E-Print Network [OSTI]

    Leung, Kevin

    2015-01-01T23:59:59.000Z

    Battery electrode surfaces are generally coated with electronically insulating solid films of thickness 1-50 nm. Both electrons and Li+ can move at the electrode-surface film interface in response to the voltage, which adds complexity to the "electric double layer" (EDL). We apply Density Functional Theory (DFT) to investigate how the applied voltage is manifested as changes in the EDL at atomic lengthscales, including charge separation and interfacial dipole moments. Illustrating examples include Li(3)PO(4), Li(2)CO(3), and Li(x)Mn(2)O(4) thin-films on Au(111) surfaces under ultrahigh vacuum conditions. Adsorbed organic solvent molecules can strongly reduce voltages predicted in vacuum. We propose that manipulating surface dipoles, seldom discussed in battery studies, may be a viable strategy to improve electrode passivation. We also distinguish the computed potential governing electrons, which is the actual or instantaneous voltage, and the "lithium cohesive energy" based voltage governing Li content widely...

  2. High-energy helium backscattering for the compositional analysis of thin-film oxide-superconductors

    SciTech Connect (OSTI)

    Hubbard, K.M.; Martin, J.A.; Muenchausen, R.E.; Tesmer, J.R.; Nastasi, M.

    1989-01-01T23:59:59.000Z

    Recent experiments have demonstrated that the broad elastic-scattering resonance for 8.8 MeV helium bombardment of oxygen can be exploited to measure the oxygen content of YBaCuO thin films. A potential difficulty with such measurements is distortion of the backscattering spectrum due to resonant scattering from the substrate elements, which could prevent the accurate integration of peak areas. We have measured the elastic scattering cross sections for Sr and Ti, relative to Gd, with He ions in the energy range of 2.2--8.8 MeV, and a scattering angle of 166/degree/. The results verify that resonant scattering from the substrate does not interfere with the high-energy compositional analysis of YBaCuO films deposited on SrTiO/sub 3/. Scattering cross sections for Ca, measured relative to Ba, have also been determined for application to the analysis of BiSrCaCuO and TlCaBaCuO films. Because of resonant scattering from Ca at beam energies above 6 MeV, two backscattering measurements are required for these materials: one at 8.8 MeV to determine the O content, and one at or below 6 MeV to determine the Ca content. Anticipating a more general applicability of this technique to the analysis of metal-oxide films, data are also presented for a number of elements, as an empirical guideline, which give the beam energies above which scattering cross sections deviate from their Rutherford values, and must be determined experimentally. 10 refs., 6 figs., 4 tabs.

  3. Disorder induced semiconductor to metal transition and modifications of grain boundaries in nanocrystalline zinc oxide thin film

    SciTech Connect (OSTI)

    Singh, Fouran; Kumar, Vinod [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Chaudhary, Babloo [Centre of Excellence in Material Sciences and Nanomaterials, Z. H. College of Engineering and Technology, Aligarh Muslim University, Aligarh, U.P. 202001 (India); Singh, R. G. [Department of Electronic Science, Maharaja Agrasen College, University of Delhi, New Delhi 110096 (India); Kumar, Sanjeev [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Department of Electronic Science, University of Delhi South Campus, New Delhi 110023 (India); Kapoor, A. [Department of Electronic Science, University of Delhi South Campus, New Delhi 110023 (India)

    2012-10-01T23:59:59.000Z

    This paper report on the disorder induced semiconductor to metal transition (SMT) and modifications of grain boundaries in nanocrystalline zinc oxide thin film. Disorder is induced using energetic ion irradiation. It eliminates the possibility of impurities induced transition. However, it is revealed that some critical concentration of defects is needed for inducing such kind of SMT at certain critical temperature. Above room temperature, the current-voltage characteristics in reverse bias attributes some interesting phenomenon, such as electric field induced charge transfer, charge trapping, and diffusion of defects. The transition is explained by the defects induced disorder and strain in ZnO crystallites created by high density of electronic excitations.

  4. Magnetism at spinel thin film interfaces probed through soft x-ray spectroscopy techniques

    E-Print Network [OSTI]

    Chopdekar, R.V.

    2010-01-01T23:59:59.000Z

    Magnetism at spinel thin ?lm interfaces probed through softachievable in bulk form. Magnetism at the interface regionand the origin of the magnetism from multiple magnetic

  5. Dopant Ion Size and Electronic Structure Effects on Transparent Conducting Oxides. Sc-Doped CdO Thin Films

    E-Print Network [OSTI]

    Medvedeva, Julia E.

    O Thin Films Grown by MOCVD Shu Jin,, Yu Yang,, Julia E. Medvedeva,,§ John R. Ireland,| Andrew W. Metz-doped CdO (CSO) thin films have been grown on both amorphous glass and single-crystal MgO(100) substrates) at a Sc doping level of 1.8 atom %. The CSO thin films exhibit an average transmittance >80

  6. Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10?nm devices

    SciTech Connect (OSTI)

    Akhavan, N. D., E-mail: nima.dehdashti@uwa.edu.au; Jolley, G.; Umana-Membreno, G. A.; Antoszewski, J.; Faraone, L. [Department of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley, WA 6009 (Australia)

    2014-08-28T23:59:59.000Z

    Three-dimensional (3D) topological insulators (TI) are a new state of quantum matter in which surface states reside in the bulk insulating energy bandgap and are protected by time-reversal symmetry. It is possible to create an energy bandgap as a consequence of the interaction between the conduction band and valence band surface states from the opposite surfaces of a TI thin film, and the width of the bandgap can be controlled by the thin film thickness. The formation of an energy bandgap raises the possibility of thin-film TI-based metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this paper, we explore the performance of MOSFETs based on thin film 3D-TI structures by employing quantum ballistic transport simulations using the effective continuous Hamiltonian with fitting parameters extracted from ab-initio calculations. We demonstrate that thin film transistors based on a 3D-TI structure provide similar electrical characteristics compared to a Si-MOSFET for gate lengths down to 10?nm. Thus, such a device can be a potential candidate to replace Si-based MOSFETs in the sub-10?nm regime.

  7. X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films

    SciTech Connect (OSTI)

    Siah, Sin Cheng, E-mail: siahsincheng@gmail.com, E-mail: buonassisi@mit.edu; Lee, Yun Seog; Buonassisi, Tonio, E-mail: siahsincheng@gmail.com, E-mail: buonassisi@mit.edu [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Lee, Sang Woon; Gordon, Roy G. [Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138 (United States); Heo, Jaeyeong [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Shibata, Tomohiro; Segre, Carlo U. [Physics Department and CSRRI, Illinois Institute of Technology, Chicago, Illinois 606016 (United States)

    2014-06-16T23:59:59.000Z

    We investigate the correlation between the atomic structures of amorphous zinc-tin-oxide (a-ZTO) thin films grown by atomic layer deposition (ALD) and their electronic transport properties. We perform synchrotron-based X-ray absorption spectroscopy at the K-edges of Zn and Sn with varying [Zn]/[Sn] compositions in a-ZTO thin films. In extended X-ray absorption fine structure (EXAFS) measurements, signal attenuation from higher-order shells confirms the amorphous structure of a-ZTO thin films. Both quantitative EXAFS modeling and X-ray absorption near edge spectroscopy (XANES) reveal that structural disorder around Zn atoms increases with increasing [Sn]. Field- and Hall-effect mobilities are observed to decrease with increasing structural disorder around Zn atoms, suggesting that the degradation in electron mobility may be correlated with structural changes.

  8. Apparatus and method for characterizing thin film and interfaces using an optical heat generator and detector

    DOE Patents [OSTI]

    Maris, H.J.; Stoner, R.J.

    1998-05-05T23:59:59.000Z

    An optical heat generation and detection system generates a first non-destructive pulsed beam of electromagnetic radiation that is directed upon a sample containing at least one interface between similar or dissimilar materials. The first pulsed beam of electromagnetic radiation, a pump beam, produces a non-uniform temperature change within the sample. A second non-destructive pulsed beam of electromagnetic radiation, a probe beam, is also directed upon the sample. Physical and chemical properties of the materials, and of the interface, are measured by observing changes in a transient optical response of the sample to the probe beam, as revealed by a time dependence of changes in, by example, beam intensity, direction, or state of polarization. The system has increased sensitivity to interfacial properties including defects, contaminants, chemical reactions and delaminations, as compared to conventional non-destructive, non-contact techniques. One feature of this invention is a determination of a Kapitza resistance at the interface, and the correlation of the determined Kapitza resistance with a characteristic of the interface, such as roughness, delamination, the presence of contaminants, etc. 31 figs.

  9. Apparatus and method for characterizing thin film and interfaces using an optical heat generator and detector

    DOE Patents [OSTI]

    Maris, Humphrey J (Barrington, RI); Stoner, Robert J (Duxbury, MA)

    1998-01-01T23:59:59.000Z

    An optical heat generation and detection system generates a first non-destructive pulsed beam of electromagnetic radiation that is directed upon a sample containing at least one interface between similar or dissimilar materials. The first pulsed beam of electromagnetic radiation, a pump beam (21a), produces a non-uniform temperature change within the sample. A second non-destructive pulsed beam of electromagnetic radiation, a probe beam (21b), is also directed upon the sample. Physical and chemical properties of the materials, and of the interface, are measured by observing changes in a transient optical response of the sample to the probe beam, as revealed by a time dependence of changes in, by example, beam intensity, direction, or state of polarization. The system has increased sensitivity to interfacial properties including defects, contaminants, chemical reactions and delaminations, as compared to conventional non-destructive, non-contact techniques. One feature of this invention is a determination of a Kapitza resistance at the interface, and the correlation of the determined Kapitza resistance with a characteristic of the interface, such as roughness, delamination, the presence of contaminants, etc.

  10. Enhanced stability against bias-stress of metal-oxide thin film transistors deposited at elevated temperatures

    SciTech Connect (OSTI)

    Fakhri, M.; Goerrn, P.; Riedl, T. [Institute of Electronic Devices, University of Wuppertal, Rainer-Gruenter-St. 21, 42119 Wuppertal (Germany); Weimann, T.; Hinze, P. [Physikalisch-Technische Bundesanstalt Braunschweig, Bundesallee 100, 38116 Braunschweig (Germany)

    2011-09-19T23:59:59.000Z

    Transparent zinc-tin-oxide (ZTO) thin film transistors (TFTs) have been prepared by DC magnetron sputtering. Compared to reference devices with a channel deposited at room temperature and subsequently annealing at 400 deg. C, a substantially enhanced stability against bias stress is evidenced for devices with in-situ substrate heating during deposition (400 deg. C). A reduced density of sub-gap defect states in TFT channels prepared with in-situ substrate heating is found. Concomitantly, a reduced sensitivity to the adsorption of ambient gases is evidenced for the in-situ heated devices. This finding is of particular importance for an application as driver electronics for organic light emitting diode displays.

  11. Top-gate zinc tin oxide thin-film transistors with high bias and environmental stress stability

    SciTech Connect (OSTI)

    Fakhri, M.; Theisen, M.; Behrendt, A.; Görrn, P.; Riedl, T. [Institute of Electronic Devices, University of Wuppertal, Wuppertal 42119 (Germany)

    2014-06-23T23:59:59.000Z

    Top gated metal-oxide thin-film transistors (TFTs) provide two benefits compared to their conventional bottom-gate counterparts: (i) The gate dielectric may concomitantly serve as encapsulation layer for the TFT channel. (ii) Damage of the dielectric due to high-energetic particles during channel deposition can be avoided. In our work, the top-gate dielectric is prepared by ozone based atomic layer deposition at low temperatures. For ultra-low gas permeation rates, we introduce nano-laminates of Al{sub 2}O{sub 3}/ZrO{sub 2} as dielectrics. The resulting TFTs show a superior environmental stability even at elevated temperatures. Their outstanding stability vs. bias stress is benchmarked against bottom-gate devices with encapsulation.

  12. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS

    SciTech Connect (OSTI)

    Jie Guan; Atul Verma; Nguyen Minh

    2003-04-01T23:59:59.000Z

    This document summarizes the technical progress from September 2002 to March 2003 for the program, Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells, contract number DE-AC26-00NT40711. The causes have been identified for the unstable open circuit voltage (OCV) and low performance exhibited by the anode-supported lanthanum gallate based cells from the earlier development. Promising results have been obtained in the area of synthesis of electrolyte and cathode powders, which showed excellent sintering and densification at low temperatures. The fabrication of cells using tapecalendering process for anode-supported thin lanthanum gallate electrolyte cells and their performance optimization is in progress.

  13. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS

    SciTech Connect (OSTI)

    Jie Guan; Nguyen Minh

    2003-10-01T23:59:59.000Z

    This document summarizes the technical progress from April to September 2003 for the program, Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells, contract number DE-AC26-00NT40711. Characteristics of doped lanthanum gallate (LSGMF) powder suitable for thin electrolyte fabrication have been defined. Bilayers with thin LSGMF electrolyte supported on an anode were fabricated and the fabrication process was improved. Preliminary performance was characterized. High performance cathode material Sr{sub 0.5}Sm{sub 0.5}CoO{sub 3} has been down-selected and is being optimized by modifying materials characteristics and processing parameters. The selected cathode exhibited excellent performance with cathode polarization of {approx}0.23 ohm-cm{sup 2} at 600 C.

  14. Effect of tungsten on the electrochromic behaviour of sol-gel dip coated molybdenum oxide thin films

    SciTech Connect (OSTI)

    Dhanasankar, M. [Department of Physics, Kamaraj College of Engineering and Technology, Virudhunagar 626001 (India)] [Department of Physics, Kamaraj College of Engineering and Technology, Virudhunagar 626001 (India); Purushothaman, K.K. [Department of Physics, The Gandhigram Rural Institute - Deemed University, Gandhigram 624302, Tamilnadu (India)] [Department of Physics, The Gandhigram Rural Institute - Deemed University, Gandhigram 624302, Tamilnadu (India); Muralidharan, G., E-mail: muraligru@gmail.com [Department of Physics, The Gandhigram Rural Institute - Deemed University, Gandhigram 624302, Tamilnadu (India)

    2010-05-15T23:59:59.000Z

    The paper describes the results obtained on the performance of Mo oxide and mixed W/Mo oxide thin films for possible electrochromic applications. Mo and W/Mo oxide films were deposited on conductive (FTO) glass substrates using sol-gel dip coating method. The films were annealed at 250 {sup o}C for 30 min. The structure and morphology of Mo and W/Mo oxide films were examined using XRD, SEM and EDS. XRD results indicate the amorphous nature of the Mo and W/Mo oxide films annealed for 30 min. The CV measurements revealed that the films prepared with 10 wt.% of tungsten exhibit maximum anodic/cathodic diffusion coefficient of 24.99/12.71 x 10{sup -11} cm{sup 2}/s. The same film exhibits a maximum transmittance variation ({Delta}T%) of 83.4% at 630 nm and 81.06% at 550 nm with the optical density of 1.00 and 1.13 respectively.

  15. Thin film photovoltaic device

    DOE Patents [OSTI]

    Catalano, Anthony W. (Wilmington, DE); Bhushan, Manjul (Wilmington, DE)

    1982-01-01T23:59:59.000Z

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  16. Thin film photovoltaic device

    DOE Patents [OSTI]

    Catalano, A.W.; Bhushan, M.

    1982-08-03T23:59:59.000Z

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  17. The effect of Ta interface on the crystallization of amorphous phase change material thin films

    SciTech Connect (OSTI)

    Ghezzi, G. E. [CEA-LETI, MINATEC campus, 17 rue des Martyrs, F 38054 Grenoble (France); LMGP, CNRS Grenoble-INP, MINATEC, 3 parvis Louis Néel, F 38016 Grenoble (France); Noé, P., E-mail: pierre.noe@cea.fr; Marra, M.; Sabbione, C.; Fillot, F.; Bernier, N.; Ferrand, J.; Maîtrejean, S. [CEA-LETI, MINATEC campus, 17 rue des Martyrs, F 38054 Grenoble (France); Hippert, F. [LMGP, CNRS Grenoble-INP, MINATEC, 3 parvis Louis Néel, F 38016 Grenoble (France); LNCMI (CNRS, UJF, UPS, INSA), 25 rue des Martyrs, F 38042 Grenoble Cedex 9 (France)

    2014-06-02T23:59:59.000Z

    The crystallization of amorphous GeTe and Ge{sub 2}Sb{sub 2}Te{sub 5} phase change material films, with thickness between 10 and 100?nm, sandwiched between either Ta or SiO{sub 2} layers, was investigated by optical reflectivity. Ta cladding layers were found to increase the crystallization temperature, even for films as thick as 100?nm. X-Ray diffraction investigations of crystallized GeTe films showed a very weak texture in Ta cladded films, in contrast with the strong texture observed for SiO{sub 2} cladding layers. This study shows that crystallization mechanism of phase change materials can be highly impacted by interface effects, even for relatively thick films.

  18. Damp-Heat Induced Degradation of Transparent Conducting Oxides for Thin-Film Solar Cells: Preprint

    SciTech Connect (OSTI)

    Pern, F. J.; Noufi, R.; Li, X.; DeHart, C.; To, B.

    2008-05-01T23:59:59.000Z

    The stability of intrinsic and Al-doped single- and bi-layer ZnO for thin-film CuInGaSe2 solar cells, along with Al-doped Zn1-xMgxO alloy and Sn-doped In2O3 (ITO) and F-doped SnO2, was evaluated by direct exposure to damp heat (DH) at 85oC and 85% relative humidity. The results show that the DH-induced degradation rates followed the order of Al-doped ZnO and Zn1-xMgxO >> ITO > F:SnO2. The degradation rates of Al:ZnO were slower for films of higher thickness, higher substrate temperature in sputter-deposition, and with dry-out intervals. As inferred from the optical micro-imaging showing the initiation and propagation of degrading patterns and regions, the degradation behavior appears similar for all TCOs, despite the obvious difference in the degradation rate. A degradation mechanism is proposed to explain the temporal process involving thermal hydrolysis.

  19. Lithium intercalation in sputter deposited antimony-doped tin oxide thin films: Evidence from electrochemical and optical measurements

    SciTech Connect (OSTI)

    Montero, J., E-mail: jose.montero@angstrom.uu.se; Granqvist, C. G.; Niklasson, G. A. [Department of Engineering Sciences, The A°ngström Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala (Sweden); Guillén, C.; Herrero, J. [Department of Energy, Ciemat, Avda. Complutense 40, Ed. 42, E-28040 Madrid (Spain)

    2014-04-21T23:59:59.000Z

    Transparent conducting oxides are used as transparent electrical contacts in a variety of applications, including in electrochromic smart windows. In the present work, we performed a study of transparent conducting antimony-doped tin oxide (ATO) thin films by chronopotentiometry in a Li{sup +}-containing electrolyte. The open circuit potential vs. Li was used to investigate ATO band lineups, such as those of the Fermi level and the ionization potential, as well as the dependence of these lineups on the preparation conditions for ATO. Evidence was found for Li{sup +} intercalation when a current pulse was set in a way so as to drive ions from the electrolyte into the ATO lattice. Galvanostatic intermittent titration was then applied to determine the lithium diffusion coefficient within the ATO lattice. The electrochemical density of states of the conducting oxide was studied by means of the transient voltage recorded during the chronopotentiometry experiments. These measurements were possible because, as Li{sup +} intercalation took place, charge compensating electrons filled the lowest part of the conduction band in ATO. Furthermore, the charge insertion modified the optical properties of ATO according to the Drude model.

  20. Thin-film interference Aditya Joshi

    E-Print Network [OSTI]

    Packard, Richard E.

    , y, z, t) = Eo sin(kx - t)^y (1) It is worth noting what all the symbols stand for. · Eo is the peak of two important effects that will be explained presently. Figure 1: A thin film of oil floating on water that is incident upon the interface between air (na = 1) and a thin film of oil of thickness `t'(for this oil

  1. Fundamental studies of heterostructured oxide thin film electrocatalysts for oxygen reduction at high temperatures

    E-Print Network [OSTI]

    Crumlin, Ethan J

    2012-01-01T23:59:59.000Z

    Searching for active and cost-effective catalysts for oxygen electrocatalysis is essential for the development of efficient clean electrochemical energy technologies. Perovskite oxides are active for surface oxygen exchange ...

  2. Fabrication and characterization of lithium manganese nickel oxide sputtered thin film cathodes for lithium-ion batteries

    SciTech Connect (OSTI)

    Baggetto, Loic [ORNL] [ORNL; Unocic, Raymond R [ORNL] [ORNL; Dudney, Nancy J [ORNL] [ORNL; Veith, Gabriel M [ORNL] [ORNL

    2012-01-01T23:59:59.000Z

    Li-rich and stoichiometric Li1Mn1.5Ni0.5O4 (LMNO) cathode films have been prepared by magnetron sputtering. Sputtering from a Li stoichiometric target yields Li-rich films composed of spinel, layered and monoclinic phases. Films obtained from a Li deficient target are mostly made of a spinel phase and little layered material. The resulting cathode thin films have good capacity retention and very high rate capability. The reaction mechanism has been investigated by XRD and HRTEM and evidences the reversible formation of a spinel phase, as is also found for the powder samples. The film geometry enables to understand the effect of coatings (ZnO or LiPON). Coating high voltage cathodes reduces the coulombic losses but at the price of rate performance. Nonetheless, these coated sputtered electrode thin films offer a higher rate capability than other LMNO thin films obtained by other physical vapor deposition techniques.

  3. Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in. beta. -SiC thin films

    SciTech Connect (OSTI)

    Palmour, J.W.; Kong, H.S.; Davis, R.F.

    1988-08-15T23:59:59.000Z

    Both inversion- and depletion-mode n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated on ..beta..-SiC thin films grown by chemical-vapor deposition. The inversion-mode devices were made on in situ doped (Al) p-type ..beta..-SiC(100) thin films grown on Si(100) substrates. The depletion-mode MOSFETs were made on n-type ..beta..-SiC(111) thin films grown on the Si(0001) face of a 6H ..cap alpha..-SiC substrates. Stable saturation and low subthreshold currents were achieved at drain-source voltages exceeding 5 and 25 V for the inversion-mode and depletion-mode devices, respectively. The transconductance increased with temperature up to 673 K for the short-gate-length devices, of either mode, and then decreased with further increases in temperature. It is proposed that the transconductances and threshold voltages for the inversion-mode devices are greatly affected by minority-carrier injection from the source. Stable transistor action was observed for both types of devices at temperatures up to 823 K, with the depletion-mode devices operating very well up to 923 K.

  4. Electrochromic properties of nickel oxide thin films prepared by the sol-gel method

    SciTech Connect (OSTI)

    Miki, Takeshi; Yoshimura, Kazuki; Tai, Yutaka; Tazawa, Masato; Jin, P.; Tanemura, Sakae [National Industrial Research Inst., Nagoya (Japan). Multifunctional Material Science Dept.

    1995-12-31T23:59:59.000Z

    Recently electrochromic (EC) device has been attractive as a smart glazing to control heating, cooling and lighting loads of buildings and housing. Among various electrochromic materials, nickel oxide is one of the typical anode type materials. Here, the electrochromic nickel oxide films were prepared onto transparent conducting film on glass substrate by the sol-gel method using an ethylene glycol solution of nickel nitrate hexahydrate. The films produced by the dip-coating method and calcined at 250, 300 and 350 C. The formed films were characterized by their electrochromic behavior in cyclic voltammetry. The formed films showed electrochromic behavior in 1M KOH aqueous solution as electrolytic solution. The cyclic voltammograms were recorded up to 100 cycles for each film. The anodic peak of the coloration reaction appeared at approximately +400 mV, while the cathodic peak of the bleaching reaction occurred at about +200 mV vs. Ag/AgCl. Both the anodic peak and the cathodic peak increased with an increase of the cyclic numbers in voltammograms, whereas these peaks at 100 cycles decreased with an increase of the calcination temperature of nickel oxide films. The calcination gave great influence on the other electrochromic behaviors of nickel oxide films.

  5. Processing and Characterization of P-Type Doped Zinc Oxide Thin Films

    E-Print Network [OSTI]

    Myers, Michelle Anne

    2013-03-18T23:59:59.000Z

    Applications of zinc oxide (ZnO) for optoelectronic devices, including light emitting diodes, semiconductor lasers, and solar cells have not yet been realized due to the lack of high-quality p-type ZnO. In the research presented herein, pulsed laser...

  6. Processing and Characterization of P-Type Doped Zinc Oxide Thin Films 

    E-Print Network [OSTI]

    Myers, Michelle Anne

    2013-03-18T23:59:59.000Z

    Applications of zinc oxide (ZnO) for optoelectronic devices, including light emitting diodes, semiconductor lasers, and solar cells have not yet been realized due to the lack of high-quality p-type ZnO. In the research presented herein, pulsed laser...

  7. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    SciTech Connect (OSTI)

    Morales-Masis, M., E-mail: monica.moralesmasis@epfl.ch; Ding, L.; Dauzou, F. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Jeangros, Q. [Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Hessler-Wyser, A. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Nicolay, S. [Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland); Ballif, C. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland)

    2014-09-01T23:59:59.000Z

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50?°C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  8. Investigation of zinc oxide doped with metal impurities for use as thin film conductive phosphors

    E-Print Network [OSTI]

    Evatt, Steven R.

    1994-01-01T23:59:59.000Z

    . Illustration of planar field emission diode developed by Weichold et al. . . . . . 48 Fig. 29. I-V data from vacuum field emission light emitting diode structure, after Williams, 1994. . . . . . . . . . 49 Fig. 30. Illustration of the oxidized porous silicon... carriers into a forward biased p-n junction will result in light emission if radiative transitions take place [3]. These semiconductors find applications in light emitting diodes. Other phosphors will produce light emission when they are placed...

  9. Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

    DOE Patents [OSTI]

    Auciello, Orlando

    2010-05-11T23:59:59.000Z

    A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

  10. pH-Dependent Electron Transfer from Re-bipyridyl Complexes to Metal Oxide Nanocrystalline Thin Films

    E-Print Network [OSTI]

    to a dye-sensitized solar cell, in which the rates of charge injection from a molecular excited state-CH2COOH] sensitized TiO2 and ReC1P sensitized SnO2 nanocrystalline thin films using femtosecond

  11. ATOMIC LAYER DEPOSITION OF TITANIUM OXIDE THIN FILMS ONNANOPOROUS ALUMINA TEMPLATES FOR MEDICAL APPLICATIONS

    SciTech Connect (OSTI)

    Brigmon, R.

    2009-05-05T23:59:59.000Z

    Nanostructured materials may play a significant role in controlled release of pharmacologic agents for treatment of cancer. Many nanoporous polymer materials are inadequate for use in drug delivery. Nanoporous alumina provides several advantages over other materials for use in controlled drug delivery and other medical applications. Atomic layer deposition was used to coat all the surfaces of the nanoporous alumina membrane in order to reduce the pore size in a controlled manner. Both the 20 nm and 100 nm titanium oxide-coated nanoporous alumina membranes did not exhibit statistically lower viability compared to the uncoated nanoporous alumina membrane control materials. In addition, 20 nm pore size titanium oxide-coated nanoporous alumina membranes exposed to ultraviolet light demonstrated activity against Escherichia coli and Staphylococcus aureus bacteria. Nanostructured materials prepared using atomic layer deposition may be useful for delivering a pharmacologic agent at a precise rate to a specific location in the body. These materials may serve as the basis for 'smart' drug delivery devices, orthopedic implants, or self-sterilizing medical devices.

  12. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, Andre

    2013-01-01T23:59:59.000Z

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). It is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 10-5 cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80percent from 500-1250 nm (including the glass substrate).more »These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.« less

  13. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yuankun [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group; Mendelsberg, Rueben J. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group and Molecular Foundry; Zhu, Jiaqi [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Han, Jiecai [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Anders, Andre [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group

    2013-01-01T23:59:59.000Z

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). It is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 10-5 cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80percent from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

  14. Optical generation of free charge carriers in thin films of tin oxide

    SciTech Connect (OSTI)

    Zhurbina, I. A., E-mail: zhurbina@vega.phys.msu.ru; Tsetlin, O. I.; Timoshenko, V. Yu. [Moscow State University (Russian Federation)

    2011-02-15T23:59:59.000Z

    The methods of infrared absorption spectroscopy and Raman spectroscopy are used to study nanocrystalline SnO{sub x} films (1 {<=} x {<=} 2) prepared by thermal oxidation of metallic tin layers. A monotonic decrease in the transmittance of films in the infrared region has been observed as a result of exposure of the films to light with the wavelength of 380 nm at room temperature. The effect is at a maximum for the samples with x Almost-Equal-To 2 and is observed for {approx}10 min after switching off of illumination. The mentioned variations in optical properties, similarly to those observed in the case of heating of the samples in the dark, are accounted for by an increase in the concentration of free charge carriers (electrons) in nanocrystals of tin dioxide. The data of infrared spectroscopy and the Drude model are used to calculate the concentrations of photogenerated charge carriers ({approx}10{sup 19} cm{sup -3}); variations in these concentrations in the course of illumination and after switching off of illumination are determined. Mechanisms of observed photogeneration of charge carriers in SnO{sub x} films and possible applications of this effect to gas sensors are discussed.

  15. Femtosecond all-optical parallel logic gates based on tunable saturable to reverse saturable absorption in graphene-oxide thin films

    SciTech Connect (OSTI)

    Roy, Sukhdev, E-mail: sukhdevroy@dei.ac.in; Yadav, Chandresh [Department of Physics and Computer Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282 005 (India)] [Department of Physics and Computer Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282 005 (India)

    2013-12-09T23:59:59.000Z

    A detailed theoretical analysis of ultrafast transition from saturable absorption (SA) to reverse saturable absorption (RSA) has been presented in graphene-oxide thin films with femtosecond laser pulses at 800?nm. Increase in pulse intensity leads to switching from SA to RSA with increased contrast due to two-photon absorption induced excited-state absorption. Theoretical results are in good agreement with reported experimental results. Interestingly, it is also shown that increase in concentration results in RSA to SA transition. The switching has been optimized to design parallel all-optical femtosecond NOT, AND, OR, XOR, and the universal NAND and NOR logic gates.

  16. Quasi-Reversible Oxygen Exchange of Amorphous IGZO Thin Films

    E-Print Network [OSTI]

    Shahriar, Selim

    MRSEC Quasi-Reversible Oxygen Exchange of Amorphous IGZO Thin Films NSF Grant # 1121262 A. U. Adler Center In situ electrical properties of a-IGZO thin films were carried out at 200ºC as a function/"defect" structure of amorphous oxide films. In situ conductivity of 70 nm a-IGZO thin film at 200oC measured in van

  17. CFN | Thin Films Group

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials Synthesis and Characterization Facility Thin-Film Processing Facility Online Manager (FOM) website FOM manual ESR for lab 1L32 (High-Resolution SEM and x-ray...

  18. Thin Film Photovoltaics Research

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy (DOE) supports research and development of four thin-film technologies on the path to achieving cost-competitive solar energy, including:

  19. Structural and chemical investigations of CBD-and PVD-CdS buffer layers and interfaces in Cu(In,Ga)Se2-based thin film solar cells

    E-Print Network [OSTI]

    Romeo, Alessandro

    (In,Ga)Se2-based thin film solar cells D. Abou-Rasa,b,*, G. Kostorza , A. Romeob,1 , D. Rudmannb , A Available online 8 December 2004 Abstract It is known that high-efficiency thin film solar cells based on Cu in efficiencies of solar cells with CBD- and PVD-CdS buffer layers can partly be explained by referring

  20. Thin film solar energy collector

    DOE Patents [OSTI]

    Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

    1983-11-22T23:59:59.000Z

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  1. Effect of the substrate temperature on the physical properties of molybdenum tri-oxide thin films obtained through the spray pyrolysis technique

    SciTech Connect (OSTI)

    Martinez, H.M. [Grupo de Materiales con Aplicaciones Tecnologicas, Departamento de Fisica Universidad Nacional de Colombia sede Bogota (Colombia)] [Grupo de Materiales con Aplicaciones Tecnologicas, Departamento de Fisica Universidad Nacional de Colombia sede Bogota (Colombia); Torres, J., E-mail: njtorress@unal.edu.co [Grupo de Materiales con Aplicaciones Tecnologicas, Departamento de Fisica Universidad Nacional de Colombia sede Bogota (Colombia); Lopez Carreno, L.D. [Grupo de Materiales con Aplicaciones Tecnologicas, Departamento de Fisica Universidad Nacional de Colombia sede Bogota (Colombia)] [Grupo de Materiales con Aplicaciones Tecnologicas, Departamento de Fisica Universidad Nacional de Colombia sede Bogota (Colombia); Rodriguez-Garcia, M.E. [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Campus Juriquilla, Queretaro, Qro., Mexico (Colombia)] [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Campus Juriquilla, Queretaro, Qro., Mexico (Colombia)

    2013-01-15T23:59:59.000Z

    Polycrystalline molybdenum tri-oxide thin films were prepared using the spray pyrolysis technique; a 0.1 M solution of ammonium molybdate tetra-hydrated was used as a precursor. The samples were prepared on Corning glass substrates maintained at temperatures ranging between 423 and 673 K. The samples were characterized through micro Raman, X-ray diffraction, optical transmittance and DC electrical conductivity. The species MoO{sub 3} (H{sub 2}O){sub 2} was found in the sample prepared at a substrate temperature of 423 K. As the substrate temperature rises, the water disappears and the samples crystallize into {alpha}-MoO{sub 3}. The optical gap diminishes as the substrate temperature rises. Two electrical transport mechanisms were found: hopping under 200 K and intrinsic conduction over 200 K. The MoO{sub 3} films' sensitivity was analyzed for CO and H{sub 2}O in the temperature range 160 to 360 K; the results indicate that CO and H{sub 2}O have a reduction character. In all cases, it was found that the sensitivity to CO is lower than that to H{sub 2}O. - Highlights: Black-Right-Pointing-Pointer A low cost technique is used which produces good material. Black-Right-Pointing-Pointer Thin films are prepared using ammonium molybdate tetra hydrated. Black-Right-Pointing-Pointer The control of the physical properties of the samples could be done. Black-Right-Pointing-Pointer A calculation method is proposed to determine the material optical properties. Black-Right-Pointing-Pointer The MoO{sub 3} thin films prepared by spray pyrolysis could be used as gas sensor.

  2. Structural and electrochemical characterization of two proton conducting oxide thin films for a microfabricated solid oxide fuel cell

    E-Print Network [OSTI]

    Capozzoli, Peter M

    2006-01-01T23:59:59.000Z

    The use of proton conducting oxide materials as an electrolyte offers the potential to reduce the operating temperature of a solid oxide fuel cell (SOFC), leading to improved thermal management and material compatibility. ...

  3. Thin film buried anode battery

    DOE Patents [OSTI]

    Lee, Se-Hee (Lakewood, CO); Tracy, C. Edwin (Golden, CO); Liu, Ping (Denver, CO)

    2009-12-15T23:59:59.000Z

    A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

  4. Cross-sectional observations by HRTEM of the structure of nickel oxide electrochromic thin films in the as-deposited state and the bleached state

    SciTech Connect (OSTI)

    Yoshimura, Kazuki; Miki, Takeshi; Tanemura, Sakae [National Industrial Research Inst. of Nagoya (Japan). Multifunctional Material Science Dept.] [National Industrial Research Inst. of Nagoya (Japan). Multifunctional Material Science Dept.

    1997-07-01T23:59:59.000Z

    To investigate the microstructure of nickel oxide electrochromic thin films prepared by reactive DC magnetron sputtering, cross-sectional observations of sputtered nickel oxide films have been performed using a high resolution electron microscope. High resolution images were observed for as-deposited and bleached samples. These images show that the surface morphology of these samples is quite different. The bleached sample consists of needle-like microcrystallites, while the as-deposited sample consists of columnar crystals and has a smooth surface. Diffraction patterns indicate that crystallized NiO is the dominant structure in both samples. The fact that no trace of Ni(OH){sub 2} was observed implies that the boundary and the surface of NiO microcrystallites play important roles in the electrochromic reaction.

  5. Impact of thermal strain on the dielectric constant of sputtered barium strontium titanate thin films

    E-Print Network [OSTI]

    York, Robert A.

    thin films were deposited by sputtering on Pt/SiO2 structures using five different host substrates.1063/1.1459482 Oxide thin films remain very attractive to researchers due to their wide range of useful physical properties. Most groups have focused on the fabrication of thin films for op- tical and dielectric

  6. Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

    SciTech Connect (OSTI)

    An, Sungjin; Mativenga, Mallory; Kim, Youngoo; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

    2014-08-04T23:59:59.000Z

    We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%)?+?ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.

  7. NMR characterization of thin films

    DOE Patents [OSTI]

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15T23:59:59.000Z

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  8. NMR characterization of thin films

    DOE Patents [OSTI]

    Gerald, II, Rex E. (Brookfield, IL); Klingler, Robert J. (Glenview, IL); Rathke, Jerome W. (Homer Glen, IL); Diaz, Rocio (Chicago, IL); Vukovic, Lela (Westchester, IL)

    2008-11-25T23:59:59.000Z

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  9. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    SciTech Connect (OSTI)

    Lai, Hsin-Cheng [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Pei, Zingway, E-mail: zingway@dragon.nchu.edu.tw [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Center of Nanoscience and Nanotechnology, National Chung Hsing University, Taichung 40227, Taiwan (China); Jian, Jyun-Ruri; Tzeng, Bo-Jie [Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China)

    2014-07-21T23:59:59.000Z

    In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100?°C. The a-IGZO TFT exhibit a mobility of 5.13?cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4?mm (strain?=?1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10?V for 1500?s. Thus, this technology is suitable for use in flexible displays.

  10. Thin Film Transistors On Plastic Substrates

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

    2004-01-20T23:59:59.000Z

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

  11. Enhanced Superconducting Properties of Iron Chalcogenide Thin Films 

    E-Print Network [OSTI]

    Chen, Li

    2013-07-26T23:59:59.000Z

    . In this thesis, we first optimized pure FeSe thin films by different growth conditions using pulsed laser deposition (PLD) and post-annealing procedures. The microstructure properties of the films including the epitaxial quality, interface structure and secondary...

  12. Thin film photovoltaic cell

    DOE Patents [OSTI]

    Meakin, John D. (Newark, DE); Bragagnolo, Julio (Newark, DE)

    1982-01-01T23:59:59.000Z

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  13. Fabrication and characterization of high energy density lithium-rich nickel manganese cobalt oxide cathode thin films

    SciTech Connect (OSTI)

    Baggetto, Loic [ORNL] [ORNL; Mohanty, Debasish [ORNL] [ORNL; Meisner, Roberta Ann [ORNL] [ORNL; Daniel, Claus [ORNL] [ORNL; Wood III, David L [ORNL] [ORNL; Dudney, Nancy J [ORNL] [ORNL; Veith, Gabriel M [ORNL] [ORNL

    2014-01-01T23:59:59.000Z

    This paper reports a method to prepare Li-rich NMC (Li1.2Mn0.55Ni0.15Co0.1O2) thin film cathodes for Li-ion batteries using magnetron sputtering and post-annealing in O2. The use of thin films with no binder and conductive additives enables to study in detail the surface reaction chemistry upon cycling as well as the microstructural changes in the bulk. We show that it is essential to control the deposition pressure to obtain the expected layered(R-3m)-layered(C2/m) structure, thus providing large reversible capacities up to 270 mAh g-1 and voltage profiles close to those expected. This is substantiated by TEM/SAED results showing that the films consist of a layered structure with trigonal symmetry in which Li/TM ordering is achieved. The study of various XPS core levels determines that the surface is comprised of Mn4+, Co3+ and Ni2+ cations inside an O2- framework. The losses mechanisms are studied during long cycling. After 184 cycles, the microstructure does not reveal the presence of Li/TM ordering, which supports that Li2MnO3 conversion is irreversible. In addition, we characterize that the surface chemistry evolves significantly upon cycling. The surface of cycled discharged electrodes is mostly made of inorganic species (LiF, Lix POy Fz , LixPFy), along with small amounts of organic species with C-O and O-C=O groups such as PEO, LiOR and LiCO2R. Moreover, the results support that Ni and Co migrate into the bulk whereas Mn is enriched at the surface. In the case of Mn, the reduction of Mn4+ into Mn3+ is clearly evidenced, as expected from the activation of Li2MnO3 domains.

  14. Thin-film optical initiator

    DOE Patents [OSTI]

    Erickson, Kenneth L. (Albuquerque, NM)

    2001-01-01T23:59:59.000Z

    A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

  15. Thin film superconductor magnetic bearings

    DOE Patents [OSTI]

    Weinberger, Bernard R. (Avon, CT)

    1995-12-26T23:59:59.000Z

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  16. Functionality Tuning in Vertically Aligned Nanocomposite Thin Films 

    E-Print Network [OSTI]

    Chen, Aiping

    2013-04-04T23:59:59.000Z

    Vertically aligned nanocomposite (VAN) oxide thin films are unique nanostructures with two-phase self-assembled, heteroepitaxially grown on single-crystal substrates. Both phases tend to grow vertically and simultaneously on a given substrate...

  17. Thin film composite electrolyte

    DOE Patents [OSTI]

    Schucker, Robert C. (The Woodlands, TX)

    2007-08-14T23:59:59.000Z

    The invention is a thin film composite solid (and a means for making such) suitable for use as an electrolyte, having a first layer of a dense, non-porous conductive material; a second layer of a porous ionic conductive material; and a third layer of a dense non-porous conductive material, wherein the second layer has a Coefficient of thermal expansion within 5% of the coefficient of thermal expansion of the first and third layers.

  18. Electrochromic properties of manganese oxide (MnO{sub x}) thin films made by electron beam deposition

    SciTech Connect (OSTI)

    Erlandsson, O.; Lindvall, J.; Nguyen Ngoc Toan; Nguyen Van Hung; Vu Thi Bich; Nguyen Nang Dinh [National Inst. of Physics of Vietnam, Hanoi (Viet Nam)

    1993-12-31T23:59:59.000Z

    In recent years, considerable attention has been given to both the theoretical and the experimental investigation of the physical and physico-chemical properties of the chromogenics materials due their favorable and promising applications such as electrochromic devices, energy-efficient smart windows, automobile mirrors and building glazings. Electrochromic MnO{sub x} thin films were prepared by using an electron beam technique followed by annealing post-treatment. Electrochromic properties of the films were studied in three different solutions: 1M LiClO{sub 4} in propylene carbonate, KOH (pH = 10.5) and natrium borate (pH = 9.2). The transmittance spectra of the colored films combined with their cyclic voltammograms have showed that the enhancement of the electrochromic behavior of these films can be attributed to the insertion (or extraction) of the OH{sup {minus}} anions into (or from) the MnO{sub x} films. The best electrochromic efficiency of the films was obtained in the borate electrolyte.

  19. Properties of tungsten oxide thin films formed by ion-plasma and laser deposition methods for MOSiC-based hydrogen sensors

    SciTech Connect (OSTI)

    Fominski, V. Y., E-mail: vyfominskij@mephi.ru [National Research Nuclear University 'MEPhI' (Russian Federation); Grigoriev, S. N. [Moscow State Technological University 'Stankin' (Russian Federation); Romanov, R. I.; Zuev, V. V.; Grigoriev, V. V. [National Research Nuclear University 'MEPhI' (Russian Federation)

    2012-03-15T23:59:59.000Z

    Thin-film structures based on gas-sensitive tungsten oxide and catalytic platinum are fabricated by room-temperature deposition on a silicon carbide wafer using pulsed laser and ion-plasma methods. Oxide layer annealing in air to 600 Degree-Sign C caused the formation of microstructured and nanostructured crystalline states depending on the deposition conditions. Structural differences affect the electrical parameters and the stability of characteristics. The maximum response to hydrogen is detected in the structure fabricated by depositing a low-energy laser-induced flow of tungsten atoms in oxygen. The voltage shift of the currentvoltage curves for 2% H{sub 2} in air at 350 Degree-Sign C was 4.6 V at a current of {approx}10 {mu}A. The grown structures' metastability caused a significant decrease in the shift after long-term cyclic testing. The most stable shifts of {approx}2 V at positive bias on the Pt contact were detected for oxide films deposited by ion-plasma sputtering.

  20. Vertically Aligned Nanocomposite Thin Films 

    E-Print Network [OSTI]

    Bi, Zhenxing

    2012-07-16T23:59:59.000Z

    microstructure is a brand new architecture in thin films and an exciting approach that promises tunable material functionalities as well as novel nanostructures....

  1. Oxidation of In2S3 films to synthetize In2S3(1-x)O3x thin films as a buffer layer in solar cells

    E-Print Network [OSTI]

    Boyer, Edmond

    Oxidation of In2S3 films to synthetize In2S3(1-x)O3x thin films as a buffer layer in solar cells S layers for solar cells. PACS : 68.55.ag Semiconductors, 68.55.J Morphology of films , 68.55.Nq for fabricating Cd-free CIGS solar cells [1, 2, 3]. One of its advantages is that it can be obtained from solution

  2. Metallophthalocyanine thin films : structure and physical properties

    E-Print Network [OSTI]

    Colesniuc, Corneliu Nicolai

    2011-01-01T23:59:59.000Z

    in copper phthalocyanine thin film transistors”, J. Park, J.free phthalocyanine thin films”, F. I. Bohrer, A. Sharoni,copper phthalocyanine thin-film transistors”, R. D. Yang, J.

  3. Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere

    SciTech Connect (OSTI)

    Nie, Man, E-mail: man.nie@helmholtz-berlin.de; Mete, Tayfun; Ellmer, Klaus [Department of Solar Fuels and Energy Storage Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D14109 Berlin (Germany)

    2014-04-21T23:59:59.000Z

    The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w???d{sub f}{sup ?}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent ? is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ? increases with film thickness also with a power law according to ????d{sub f}{sup z} with exponents z?=?0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2?+?1 dimensions is discussed for the ITO growth in this work.

  4. Enhancement of conduction noise absorption by hybrid absorbers composed of indium-tin-oxide thin film and magnetic composite sheet on a microstrip line

    SciTech Connect (OSTI)

    Kim, Sun-Hong; Kim, Sung-Soo, E-mail: sskim@chungbuk.ac.kr [Department of Advanced Materials Engineering, Chungbuk National University, Cheongju 361-763 (Korea, Republic of)

    2014-05-05T23:59:59.000Z

    In order to develop wide-band noise absorbers with a focused design for low frequency performance, this study investigates hybrid absorbers that are composed of conductive indium-tin-oxide (ITO) thin film and magnetic composite sheets. The ITO films prepared via reactive sputtering exhibit a typical value of electrical resistivity of ?10{sup ?4} ? m. Rubber composites with flaky Fe-Si-Al particles are used as the magnetic sheet with a high permeability and high permittivity. For the ITO film with a low surface resistance and covered by the magnetic sheet, approximately 90% power absorption can be obtained at 1?GHz, which is significantly higher than that of the original magnetic sheet or ITO film. The high power absorption of the hybrid absorber is attributed to the enhanced ohmic loss of the ITO film through increased electric field strength bounded by the upper magnetic composite sheet. However, for the reverse layering sequence of the ITO film, the electric field experienced by ITO film is very weak due to the electromagnetic shielding by the under layer of magnetic sheet, which does not result in enhanced power absorption.

  5. Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy Thin Films Studied Using Atom Probe Tomography: Comparison Of Experiments And Simulation

    SciTech Connect (OSTI)

    Devaraj, Arun; Kaspar, Tiffany C.; Ramanan, Sathvik; Walvekar, Sarita K.; Bowden, Mark E.; Shutthanandan, V.; Kurtz, Richard J.

    2014-11-21T23:59:59.000Z

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxial (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation it is very challenging to characterize by conventional techniques. Therefor laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr0.61Mo0.39, Cr0.77Mo0.23, and Cr0.32V0.68 alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were thus confirmed.

  6. Thin films of metal oxide nanoparticles deposited on substrates find applications in various technologies such as sensors, heterogeneous

    E-Print Network [OSTI]

    oven, which restrict the choice of substrates (metal, glass) and can negatively affects their performances (stress induction, oxidation, substrate warping). VALUE PROPOSITION This novel process offers key+ hours in traditional ovens (including ramp up & down) Delivers equal or superior optoelectronic

  7. Microstructure, residual stress, and mechanical properties of thin film materials for a microfabricated solid oxide fuel cell

    E-Print Network [OSTI]

    Quinn, David John, Sc. D. Massachusetts Institute of Technology

    2006-01-01T23:59:59.000Z

    The microstructure and residual stress of sputter-deposited films for use in microfabricated solid oxide fuel cells are presented. Much of the work focuses on the characterization of a candidate solid electrolyte: Yttria ...

  8. Low contact resistivity of metals on nitrogen-doped cuprous oxide (Cu 2O) thin-films

    E-Print Network [OSTI]

    Siah, Sin Cheng

    Forming low-resistivity contacts on cuprous oxide (Cu[subscript 2]O) is an essential step toward demonstrating its suitability as a candidate solar cell material. We measure the contact resistivity of three noble metals ...

  9. Vertically Aligned Nanocomposite Thin Films

    E-Print Network [OSTI]

    Bi, Zhenxing

    2012-07-16T23:59:59.000Z

    and epitaxial growth ability on given substrates. In the present work, we investigated unique epitaxial two-phase VAN (BiFeO3)x:(Sm2O3)1-x and (La0.7Sr0.3MnO3)x:(Mn3O4)1-x thin film systems by pulsed laser deposition. These VAN thin films exhibit a highly...

  10. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01T23:59:59.000Z

    of a p-i-n thin-film solar cell with front transparent con-for thin-film a-si:h solar cells. Progress in Photovoltaics,in thin-film silicon solar cells. Optics Communications,

  11. High-performance amorphous gallium indium zinc oxide thin-film transistors through N{sub 2}O plasma passivation

    SciTech Connect (OSTI)

    Park, Jaechul; Kim, Sangwook; Kim, Changjung; Kim, Sunil; Song, Ihun; Yin, Huaxiang; Kim, Kyoung-Kok; Lee, Sunghoon; Hong, Kiha; Park, Youngsoo [Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin-Si, Gyeonggi-Do 449-712 (Korea, Republic of); Lee, Jaecheol; Jung, Jaekwan; Lee, Eunha [Analytical Engineering Center, Samsung Advanced Institute of Technology, Yongin-Si, Gyeonggi-Do 449-712 (Korea, Republic of); Kwon, Kee-Won [Department of Semiconductor Systems Engineering, Sungkyunkwan University, Suwon-Si, Gyeonggi-Do 440-746 (Korea, Republic of)

    2008-08-04T23:59:59.000Z

    Amorphous-gallium-indium-zinc-oxide (a-GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional a-Si:H TFTs. It has been very difficult to obtain sound TFT characteristics, because the a-GIZO active layer becomes conductive after dry etching the Mo source/drain electrode and depositing the a-SiO{sub 2} passivation layer. To prevent such damages, N{sub 2}O plasma is applied to the back surface of the a-GIZO channel layer before a-SiO{sub 2} deposition. N{sub 2}O plasma-treated a-GIZO TFTs exhibit excellent electrical properties: a field effect mobility of 37 cm{sup 2}/V s, a threshold voltage of 0.1 V, a subthreshold swing of 0.25 V/decade, and an I{sub on/off} ratio of 7.

  12. X-ray photoelectron spectroscopy study of para-substituted benzoic acids chemisorbed to aluminum oxide thin films

    SciTech Connect (OSTI)

    Kreil, Justin; Ellingsworth, Edward; Szulczewski, Greg [Department of Chemistry, The University of Alabama, Shelby Hall, 250 Hackberry Lane, Tuscaloosa, Alabama 35487 (United States)] [Department of Chemistry, The University of Alabama, Shelby Hall, 250 Hackberry Lane, Tuscaloosa, Alabama 35487 (United States)

    2013-11-15T23:59:59.000Z

    A series of para-substituted, halogenated (F, Cl, Br, and I) benzoic acid monolayers were prepared on the native oxide of aluminum surfaces by solution self-assembly and spin-coating techniques. The monolayers were characterized by x-ray photoelectron spectroscopy (XPS) and water contact angles. Several general trends are apparent. First, the polarity of the solvent is critical to monolayer formation. Protic polar solvents produced low coverage monolayers; in contrast, nonpolar solvents produced higher coverage monolayers. Second, solution deposition yields a higher surface coverage than spin coating. Third, the thickness of the monolayers determined from XPS suggests the plane of the aromatic ring is perpendicular to the surface with the carboxylate functional group most likely binding in a bidentate chelating geometry. Fourth, the saturation coverage (?2.7 × 10{sup 14} molecules cm{sup ?2}) is independent of the para-substituent.

  13. Properties of TiO{sub 2}-based transparent conducting oxide thin films on GaN(0001) surfaces

    SciTech Connect (OSTI)

    Kasai, J.; Nakao, S.; Yamada, N. [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Hitosugi, T. [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577 (Japan); Moriyama, M.; Goshonoo, K. [Toyoda Gosei Co., Ltd., Nishikasugai, Aichi 452-8564 (Japan); Hoang, N. L. H. [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Hasegawa, T. [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan)

    2010-03-15T23:59:59.000Z

    Anatase Nb-doped TiO{sub 2} transparent conducting oxide has been formed on GaN(0001) surfaces using a sputtering method. Amorphous films deposited at room temperature were annealed at a substrate temperature of 500 deg. C in vacuum to form single-phase anatase films. Films with a thickness of 170 nm exhibited a resistivity of 8x10{sup -4} {Omega} cm with absorptance less than 5% at a wavelength of 460 nm. Furthermore, the refractive index of the Nb-doped TiO{sub 2} was well matched to that of GaN. These findings indicate that Nb-doped TiO{sub 2} is a promising material for use as transparent electrodes in GaN-based light emitting diodes (LEDs), particularly since reflection at the electrode/GaN boundary can be suppressed, enhancing the external quantum efficiency of blue LEDs.

  14. The effect of deposition power on the electrical properties of Al-doped zinc oxide thin films

    SciTech Connect (OSTI)

    Chun, B. S.; Choi, Daniel S. [Department of Chemical and Materials Engineering, University of Idaho, Moscow, Idaho 83844-3024 (United States); Wu, H. C.; Shvets, I. V. [CRANN, School of Physics, Trinity College Dublin, Dublin 2 (Ireland); Abid, M. [IPMC, Ecole Polytechnique Federale de Lausanne, Station 3, CH-1015 Lausanne (Switzerland); King Abdullah Institute for Nanotechnology, King Saud University, Riyadh 11451 (Saudi Arabia); Chu, I. C. [Data and Storage R and D Laboratory, Seocho R and D Campus, LG Electronics, Seoul 137-130 (Korea, Republic of); Serrano-Guisan, S. [Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany)

    2010-08-23T23:59:59.000Z

    We investigated the effect on the electronic properties of aluminum (Al)-zinc oxide (ZnO) films by modulating the radio frequency sputtering power. Our experimental results show that increasing the sputtering power increases the Al doping concentration, decreases the resistivity, and also shifts the Zn 2p and O 1s to higher binding energy states. Our local-density approximation (LDA) and LDA+U calculations show that the shift in higher binding energy and resistivity decrease are due to an enhancement of the O 2p-Zn 3d coupling and the modification of the Zn 4s-O 2p interaction in ZnO induced by Al doping.

  15. Nanostructured europium oxide thin films deposited by pulsed laser ablation of a metallic target in a He buffer atmosphere

    SciTech Connect (OSTI)

    Luna, H.; Franceschini, D. F.; Prioli, R.; Guimaraes, R. B.; Sanchez, C. M.; Canal, G. P.; Barbosa, M. D. L.; Galvao, R. M. O. [Instituto de Fisica, Universidade Federal do Rio de Janeiro, Cx. Postal 68528, Rio de Janeiro, RJ 21941-972 (Brazil); Instituto de Fisica, Universidade Federal Fluminense, Niteroi, RJ 24210-346 (Brazil); Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, Rua Marques de Sao Vicente 225, 22453-970, Rio de Janeiro, RJ (Brazil); Instituto de Fisica, Universidade Federal Fluminense, Niteroi, RJ 24210-346 (Brazil); Centro Brasileiro de Pesquisas Fisicas, Laboratorio de Plasmas Aplicados, Rua Xavier Sigaud 150, 22290-180, Rio de Janeiro, RJ (Brazil); Instituto de Fisica, Departamento de Fisica Nuclear, Universidade de Sao Paulo, Caixa Postal 66328, 05315-970, Sao Paulo, SP (Brazil); Centro Brasileiro de Pesquisas Fisicas, Laboratorio de Plasmas Aplicados, Rua Xavier Sigaud 150, 22290-180, Rio de Janeiro, RJ (Brazil)

    2010-09-15T23:59:59.000Z

    Nanostrucured europium oxide and hydroxide films were obtained by pulsed Nd:YAG (532 nm) laser ablation of a europium metallic target, in the presence of a 1 mbar helium buffer atmosphere. Both the produced film and the ambient plasma were characterized. The plasma was monitored by an electrostatic probe, for plume expansion in vacuum or in the presence of the buffer atmosphere. The time evolution of the ion saturation current was obtained for several probe to substrate distances. The results show the splitting of the plume into two velocity groups, being the lower velocity profile associated with metal cluster formation within the plume. The films were obtained in the presence of helium atmosphere, for several target-to-substrate distances. They were analyzed by Rutherford backscattering spectrometry, x-ray diffraction, and atomic force microscopy, for as-deposited and 600 deg. C treated-in-air samples. The results show that the as-deposited samples are amorphous and have chemical composition compatible with europium hydroxide. The thermally treated samples show x-ray diffraction peaks of Eu{sub 2}O{sub 3}, with chemical composition showing excess oxygen. Film nanostructuring was shown to be strongly correlated with cluster formation, as shown by velocity splitting in probe current versus time plots.

  16. Modeling of capacitance transients of thin-film solar cells: A valuable tool to gain information on perturbing layers or interfaces

    SciTech Connect (OSTI)

    Lauwaert, Johan, E-mail: Johan.Lauwaert@UGent.be; Van Puyvelde, Lisanne; Vrielinck, Henk [Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, 9000 Gent (Belgium); Lauwaert, Jeroen; Thybaut, Joris W. [Laboratory for Chemical Technology (LCT), Ghent University, Krijgslaan 281-S5, 9000 Gent (Belgium)

    2014-02-03T23:59:59.000Z

    Thin-film electronic and photovoltaic devices often comprise, in addition to the anticipated p-n junctions, additional non-ideal ohmic contacts between layers. This may give rise to additional signals in capacitance spectroscopy techniques that are not directly related to defects in the structure. In this paper, we present a fitting algorithm for transient signals arising from such an additional junction. The fitting results are in excellent agreement with the diode characteristics extracted from static measurements on individual components. Finally, the algorithm is applied for determining the barriers associated with anomalous signals reported for selected CuIn{sub 1–x}Ga{sub x}Se{sub 2} and CdTe solar cells.

  17. Thin film lithium-based batteries and electrochromic devices fabricated with nanocomposite electrode materials

    DOE Patents [OSTI]

    Gillaspie, Dane T; Lee, Se-Hee; Tracy, C. Edwin; Pitts, John Roland

    2014-02-04T23:59:59.000Z

    Thin-film lithium-based batteries and electrochromic devices (10) are fabricated with positive electrodes (12) comprising a nanocomposite material composed of lithiated metal oxide nanoparticles (40) dispersed in a matrix composed of lithium tungsten oxide.

  18. Molecular doping for control of gate bias stress in organic thin film transistors

    SciTech Connect (OSTI)

    Hein, Moritz P., E-mail: hein@iapp.de; Lüssem, Björn; Jankowski, Jens; Tietze, Max L.; Riede, Moritz K. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany)] [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany); Zakhidov, Alexander A. [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)] [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany); Leo, Karl [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany) [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany); Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)

    2014-01-06T23:59:59.000Z

    The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface.

  19. Thin film-coated polymer webs

    DOE Patents [OSTI]

    Wenz, Robert P. (Cottage Grove, MN); Weber, Michael F. (Shoreview, MN); Arudi, Ravindra L. (Woodbury, MN)

    1992-02-04T23:59:59.000Z

    The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

  20. Low work function, stable thin films

    DOE Patents [OSTI]

    Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

    2000-01-01T23:59:59.000Z

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  1. Semiconductor-nanocrystal/conjugated polymer thin films

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Oakland, CA); Dittmer, Janke J. (Munich, DE); Huynh, Wendy U. (Munich, DE); Milliron, Delia (Berkeley, CA)

    2010-08-17T23:59:59.000Z

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  2. Atomic-scale Structural Characterizations of Functional Epitaxial Thin Films

    E-Print Network [OSTI]

    Zhu, Yuanyuan

    2013-06-03T23:59:59.000Z

    ................................................................ 10 1.3.1 Superconducting FeSe0.5Te0.5 epitaxial films........................................ 10 1.3.2 YBa2Cu3O7-x(YBCO) epitaxial thin films and flux-pinning effects ...... 14 1.3.3 Perovskite oxide epitaxial thin films... ...................................... 22 Figure 1.9. (a) Schematic illustration of ABO3 perovskite structure. (b) The corner -sharing oxygen octahedra in perovskite structure. . ................................... 23 Figure 1.10. (a) A HRTEM micrograph,67 (b) a Cs-corrected HRTEM image...

  3. Thin film polymeric gel electrolytes

    DOE Patents [OSTI]

    Derzon, Dora K. (1554 Rosalba St. NE., Albuquerque, Bernalillo County, NM 87112); Arnold, Jr., Charles (3436 Tahoe, NE., Albuquerque, Bernalillo County, NM 87111); Delnick, Frank M. (9700 Fleming Rd., Dexter, MI 48130)

    1996-01-01T23:59:59.000Z

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  4. Thin film polymeric gel electrolytes

    DOE Patents [OSTI]

    Derzon, D.K.; Arnold, C. Jr.; Delnick, F.M.

    1996-12-31T23:59:59.000Z

    Novel hybrid thin film electrolytes, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1} cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

  5. 502 IEEE ELECTRON DEVICE LETTERS, VOL. 19, NO. 12, DECEMBER 1998 High-Performance Polycrystalline SiGe Thin-Film

    E-Print Network [OSTI]

    SiGe Thin-Film Transistors Using Al O Gate Insulators Zhonghe Jin, Hoi S. Kwok, and Man Wong Abstract--The use of aluminum oxide as the gate insulator for low temperature (600 C) polycrystalline SiGe thin that the direct interface between the Al2O3 and the SiGe channel layer is sufficiently passivated to make Al2O3

  6. Thin film photovoltaic cells

    DOE Patents [OSTI]

    Rothwarf, Allen (Philadelphia, PA)

    1981-01-01T23:59:59.000Z

    A solar cell has as its transparent electrical contact a grid made from a non-noble metal by providing a layer of copper oxide between the transparent electrical contact and the absorber-generator.

  7. Large area ceramic thin films on plastics: A versatile route via solution processing

    SciTech Connect (OSTI)

    Kozuka, H.; Yamano, A.; Uchiyama, H.; Takahashi, M. [Faculty of Chemistry, Materials and Bioengineering, Kansai University, 3-3-35 Yamate-cho, Suita, 564-8680 (Japan); Fukui, T.; Yoki, M.; Akase, T. [Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, 564-8680 (Japan)

    2012-01-01T23:59:59.000Z

    A new general route for large area, submicron thick ceramic thin films (crystalline metal oxide thin films) on plastic substrates is presented, where the crystallization of films is guaranteed by a firing process. Gel films are deposited on silicon substrates with a release layer and fired to be ceramic films, followed by transferring onto plastic substrates using adhesives. The ceramic films thus fabricated on plastics exhibit a certain degree of flexibility, implying the possibility of the technique to be applied to high-throughput roll-to-roll processes. Using this technique, we successfully realized transparent anatase thin films that provide high optical reflectance and transparent indium tin oxide thin films that exhibit electrical conductivity on polycarbonate and acrylic resin substrates, respectively. Crystallographically oriented zinc oxide films and patterned zinc oxide films are also demonstrated to be realized on acrylic resin substrates.

  8. Apparatus for making cathodo- and photo- luminescent measurements of thin film phosphors

    E-Print Network [OSTI]

    Babuchna, Paul Michael

    1998-01-01T23:59:59.000Z

    the understanding of the thin film phosphor, tungsten doped zinc oxide. Principally, a vacuum system is constructed and provides for both photo-and cathode-phosphor excitations. A measurement capability is then included. Finally, additions are mentioned...

  9. Thin films and uses

    DOE Patents [OSTI]

    Baskaran, Suresh (Kennewick, WA); Graff, Gordon L. (Kennewick, WA); Song, Lin (Richland, WA)

    1998-01-01T23:59:59.000Z

    The invention provides a method for synthesizing a titanium oxide-containing film comprising the following steps: (a) preparing an aqueous solution of a titanium chelate with a titanium molarity in the range of 0.01M to 0.6M. (b) immersing a substrate in the prepared solution, (c) decomposing the titanium chelate to deposit a film on the substrate. The titanium chelate maybe decomposed acid, base, temperature or other means. A preferred method provides for the deposit of adherent titanium oxide films from C2 to C5 hydroxy carboxylic acids. In another aspect the invention is a novel article of manufacture having a titanium coating which protects the substrate against ultraviolet damage. In another aspect the invention provides novel semipermeable gas separation membranes, and a method for producing them.

  10. Preparation of redox polymer cathodes for thin film rechargeable batteries

    DOE Patents [OSTI]

    Skotheim, T.A.; Lee, H.S.; Okamoto, Yoshiyuki.

    1994-11-08T23:59:59.000Z

    The present invention relates to the manufacture of thin film solid state electrochemical devices using composite cathodes comprising a redox polymer capable of undergoing oxidation and reduction, a polymer solid electrolyte and conducting carbon. The polymeric cathode material is formed as a composite of radiation crosslinked polymer electrolytes and radiation crosslinked redox polymers based on polysiloxane backbones with attached organosulfur side groups capable of forming sulfur-sulfur bonds during electrochemical oxidation.

  11. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01T23:59:59.000Z

    Solar Energy Materials and Solar Cells, 86:207–216, 2005. [silicon thin films and solar cells. Journal of Appliedof a p-i-n thin-film solar cell with front transparent con-

  12. A thin film transistor driven microchannel device

    E-Print Network [OSTI]

    Lee, Hyun Ho

    2005-02-17T23:59:59.000Z

    .1. Principle of Electrophoresis?????????????? 1.2. Capillary and Microchip Electrophoresis????????... 1.3. Electrophoresis of DNA???????????????.. 2. Plasma Thin Film Deposition Process???????????... 2.1. Fundamentals of Plasma?????????????.?? 2.2. Plasma... Phase Chemical Reactions???????????.. 2.3. Plasma Enhanced Chemical Vapor Deposition??????.. 2.4. PECVD Thin Film?????????????????.. 3. Thin Film Transistor??????????????????.. 7 7 12 17 20 20 23 24 25 29 III...

  13. Theoretical simulations of protective thin film Fabry-Pérot filters for integrated optical elements of diode pumped alkali lasers (DPAL)

    SciTech Connect (OSTI)

    Quarrie, L., E-mail: Lindsay.Quarrie@l-3com.com, E-mail: lindsay.o.quarrie@gmail.com [New Mexico Institute of Mining and Technology, Department of Materials Engineering, 801 LeRoy Place, Socorro, NM 87801 (United States); Air Force Research Laboratory, AFRL/RDLC Laser CoE, 3550 Aberdeen Avenue SE, Kirtland AFB, NM 87117-5776 (United States)

    2014-09-15T23:59:59.000Z

    The lifetime of Diode-Pumped Alkali Lasers (DPALs) is limited by damage initiated by reaction of the glass envelope of its gain medium with rubidium vapor. Rubidium is absorbed into the glass and the rubidium cations diffuse through the glass structure, breaking bridging Si-O bonds. A damage-resistant thin film was developed enhancing high-optical transmission at natural rubidium resonance input and output laser beam wavelengths of 780 nm and 795 nm, while protecting the optical windows of the gain cell in a DPAL. The methodology developed here can be readily modified for simulation of expected transmission performance at input pump and output laser wavelengths using different combination of thin film materials in a DPAL. High coupling efficiency of the light through the gas cell was accomplished by matching the air-glass and glass-gas interfaces at the appropriate wavelengths using a dielectric stack of high and low index of refraction materials selected to work at the laser energies and protected from the alkali metal vapor in the gain cell. Thin films as oxides of aluminum, zirconium, tantalum, and silicon were selected allowing the creation of Fabry-Perot optical filters on the optical windows achieving close to 100% laser transmission in a solid optic combination of window and highly reflective mirror. This approach allows for the development of a new whole solid optic laser.

  14. MICROSTRUCTURE STUDY ON THE La0.7Sr0.3MnO3 AND RARE-EARTH OXIDE VERTICALLY ALIGNED NANOCOMPOSITE THIN FILMS

    E-Print Network [OSTI]

    Hazariwala, Harshad

    2011-05-05T23:59:59.000Z

    interfacial area where magnetoelectric coupling in BaTiO3:CoFe2O4 and BiFeO3:NiFe2O4, 3,4 and strain tuning in BiFeO3:Sm2O3 and La0.7Sr0.3MnO3:ZnO have been achieved. 5 In this work, epitaxial La0.7Sr0.3MnO3 and rare-earth oxide nanocomposites have... interfaces. At the beginning of the project, we processed ceramic composite targets by following the standard solid state reaction and analyze the target crystalline properties in order to _______________ This thesis follows the style of Applied Physics...

  15. Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films and their multilayered structures for photonic applications

    E-Print Network [OSTI]

    Boyer, Edmond

    1 Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films, 35042 Rennes Cedex, France Abstract Amorphous chalcogenide and alumino-silicate thin films were (As40Se60/Ge25Sb5S70) and mixed chalcogenide-oxide layers (As40Se60/alumino-silicate and Ga10Ge15Te75

  16. Thin Film Encapsulation Methods for Large Area MEMS Packaging

    E-Print Network [OSTI]

    Mahajerin, Armon

    2012-01-01T23:59:59.000Z

    P. J. French, “Robust Wafer-Level Thin-Film Encapsulation ofThe Elastic Properties of Thin- Film Silicon Nitride,” IEEELPCVD Silicon Nitride Thin Films at Cryogenic Temperatures,”

  17. 3D-2D ASYMPTOTIC ANALYSIS FOR INHOMOGENEOUS THIN FILMS

    E-Print Network [OSTI]

    3D-2D ASYMPTOTIC ANALYSIS FOR INHOMOGENEOUS THIN FILMS plate models, periodic pr* *o- files, and within the context of optimal design for thin films 5. Third application - Optimal design of a thin film 19 6. Final Remarks

  18. Mechanisms for fatigue and wear of polysilicon structural thin films

    E-Print Network [OSTI]

    Alsem, Daniel Henricus

    2006-01-01T23:59:59.000Z

    of single-crystal silicon thin films from 1991 to 2006. Thefor polycrystalline silicon thin films After the initialThis mechanism is specific to thin-film silicon where cracks

  19. Effect of deposition times on structure of Ga-doped ZnO thin films as humidity sensor

    SciTech Connect (OSTI)

    Khalid, Faridzatul Shahira; Awang, Rozidawati [School of Applied Physics, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia)

    2014-09-03T23:59:59.000Z

    Gallium doped zinc oxide (GZO) has good electrical property. It is widely used as transparent electrode in photovoltaic devices, and sensing element in gas and pressure sensors. GZO thin film was prepared using magnetron sputtering. Film deposition times were set at 10, 15, 20, 25 and 30 minutes to get samples of different thickness. X-ray diffraction (XRD) was used to determine the structure of GZO thin films. Structure for GZO thin film is hexagonal wurtzite structure. Morphology and thickness of GZO thin films was observed from FESEM micrographs. Grain size and thickness of thin films improved with increasing deposition times. However, increasing the thickness of thin films occur below 25 minutes only. Electrical properties of GZO thin films were studied using a four-point probe technique. The changes in the structure of the thin films lead to the changed of their electrical properties resulting in the reduction of the film resistance. These thin films properties significantly implying the potential application of the sample as a humidity sensor.

  20. Adhesion and Thin-Film Module Reliability

    SciTech Connect (OSTI)

    McMahon, T. J.; Jorgenson, G. J.

    2006-01-01T23:59:59.000Z

    Among the infrequently measured but essential properties for thin-film (T-F) module reliability are the interlayer adhesion and cohesion within a layer. These can be cell contact layers to glass, contact layers to the semiconductor, encapsulant to cell, glass, or backsheet, etc. We use an Instron mechanical testing unit to measure peel strengths at 90deg or 180deg and, in some cases, a scratch and tape pull test to evaluate inter-cell layer adhesion strengths. We present peel strength data for test specimens laminated from the three T-F technologies, before and after damp heat, and in one instance at elevated temperatures. On laminated T-F cell samples, failure can occur uniformly at any one of the many interfaces, or non-uniformly across the peel area at more than one interface. Some peel strengths are Lt1 N/mm. This is far below the normal ethylene vinyl acetate/glass interface values of >10 N/mm. We measure a wide range of adhesion strengths and suggest that adhesion measured under higher temperature and relative humidity conditions is more relevant for module reliability.

  1. Multilayer Thin-Film Thermoelectric Materials for Vehicle Applications...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Multilayer Thin-Film Thermoelectric Materials for Vehicle Applications Multilayer Thin-Film Thermoelectric Materials for Vehicle Applications 2004 Diesel Engine Emissions Reduction...

  2. Templating Mesoporous Hierarchies in Silica Thin Films Using...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Templating Mesoporous Hierarchies in Silica Thin Films Using the Thermal Degradation of Cellulose Nitrate. Templating Mesoporous Hierarchies in Silica Thin Films Using the Thermal...

  3. High Temperature Thin Film Polymer Dielectric Based Capacitors...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    High Temperature Thin Film Polymer Dielectric Based Capacitors for HEV Power Electronic Systems High Temperature Thin Film Polymer Dielectric Based Capacitors for HEV Power...

  4. Optical-Fiber-Based, Time-Resolved Photoluminescence Spectrometer for Thin-Film Absorber Characterization and Analysis of TRPL Data for CdS/CdTe Interface: Preprint

    SciTech Connect (OSTI)

    Kuciauskas, D.; Duenow, J. N.; Kanevce, A.; Li, J. V.; Young, M. R.; Dippo, P.; Levi, D. H.

    2012-06-01T23:59:59.000Z

    We describe the design of a time resolved photoluminescence (TRPL) spectrometer for rapid semiconductor absorber characterization. Simplicity and flexibility is achieved by using single optical fiber to deliver laser pulses and to collect photoluminescence. We apply TRPL for characterization of CdS/CdTe absorbers after deposition, CdCl2 treatment, Cu doping, and back contact formation. Data suggest this method could be applied in various stages of PV device processing. Finally, we show how to analyze TRPL data for CdS/CdTe absorbers by considering laser light absorption depth and intermixing at CdS/CdTe interface.

  5. Synthesis of thin films and materials utilizing a gaseous catalyst

    DOE Patents [OSTI]

    Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

    2013-10-29T23:59:59.000Z

    A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

  6. A monolithic thin film electrochromic window

    SciTech Connect (OSTI)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. [Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center; Wei, G. [Mobil Solar Energy Corp., Billerica, MA (United States); Yu, P.C. [PPG Industries, Inc., Monroeville, PA (United States)

    1991-12-31T23:59:59.000Z

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  7. Oxygen Electrocatalysis on Epitaxial La[subscript 0.6]Sr[subscript 0.4]CoO[subscript 3-?] Perovskite Thin Films for Solid Oxide Fuel Cells

    E-Print Network [OSTI]

    Crumlin, Ethan J.

    Hetero-structured interfaces of oxides, which can exhibit reactivity characteristics remarkably different from bulk oxides, are interesting systems to explore in search of highly active fuel cell catalysts for oxygen ...

  8. Transparent conducting thin films for spacecraft applications

    SciTech Connect (OSTI)

    Perez-Davis, M.E.; Malave-Sanabria, T.; Hambourger, P.; Rutledge, S.K.; Roig, D.; Degroh, K.K.; Hung, C.

    1994-01-01T23:59:59.000Z

    Transparent conductive thin films are required for a variety of optoelectronic applications: automotive and aircraft windows, and solar cells for space applications. Transparent conductive coatings of indium-tin-oxide (ITO)-magnesium fluoride (MgF2) and aluminum doped zinc oxide (AZO) at several dopant levels are investigated for electrical resistivity (sheet resistance), carrier concentration, optical properties, and atomic oxygen durability. The sheet resistance values of ITO-MgF2 range from 10[sup 2] to 10[sup 11] ohms/square, with transmittance of 75 to 86 percent. The AZO films sheet resistances range from 10[sup 7] to 10[sup 11] ohms/square with transmittances from 84 to 91 percent. It was found that in general, with respect to the optical properties, the zinc oxide (ZnO), AZO, and the high MgF2 content ITO-MgF2 samples, were all durable to atomic oxygen plasma, while the low MgF2 content of ITO-MgF2 samples were not durable to atomic oxygen plasma exposure.

  9. Shielding superconductors with thin films

    E-Print Network [OSTI]

    Posen, Sam; Catelani, Gianluigi; Liepe, Matthias U; Sethna, James P

    2015-01-01T23:59:59.000Z

    Determining the optimal arrangement of superconducting layers to withstand large amplitude AC magnetic fields is important for certain applications such as superconducting radiofrequency cavities. In this paper, we evaluate the shielding potential of the superconducting film/insulating film/superconductor (SIS') structure, a configuration that could provide benefits in screening large AC magnetic fields. After establishing that for high frequency magnetic fields, flux penetration must be avoided, the superheating field of the structure is calculated in the London limit both numerically and, for thin films, analytically. For intermediate film thicknesses and realistic material parameters we also solve numerically the Ginzburg-Landau equations. It is shown that a small enhancement of the superheating field is possible, on the order of a few percent, for the SIS' structure relative to a bulk superconductor of the film material, if the materials and thicknesses are chosen appropriately.

  10. Thin film battery and method for making same

    DOE Patents [OSTI]

    Bates, John B. (Oak Ridge, TN); Dudney, Nancy J. (Knoxville, TN); Gruzalski, Greg R. (Oak Ridge, TN); Luck, Christopher F. (Knoxville, TN)

    1994-01-01T23:59:59.000Z

    Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

  11. Thin film battery and method for making same

    DOE Patents [OSTI]

    Bates, J.B.; Dudney, N.J.; Gruzalski, G.R.; Luck, C.F.

    1994-08-16T23:59:59.000Z

    Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode. Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between [minus]15 C and 150 C. 9 figs.

  12. MEMS-based thin-film fuel cells

    DOE Patents [OSTI]

    Jankowksi, Alan F.; Morse, Jeffrey D.

    2003-10-28T23:59:59.000Z

    A micro-electro-mechanical systems (MEMS) based thin-film fuel cells for electrical power applications. The MEMS-based fuel cell may be of a solid oxide type (SOFC), a solid polymer type (SPFC), or a proton exchange membrane type (PEMFC), and each fuel cell basically consists of an anode and a cathode separated by an electrolyte layer. Additionally catalyst layers can also separate the electrodes (cathode and anode) from the electrolyte. Gas manifolds are utilized to transport the fuel and oxidant to each cell and provide a path for exhaust gases. The electrical current generated from each cell is drawn away with an interconnect and support structure integrated with the gas manifold. The fuel cells utilize integrated resistive heaters for efficient heating of the materials. By combining MEMS technology with thin-film deposition technology, thin-film fuel cells having microflow channels and full-integrated circuitry can be produced that will lower the operating temperature an will yield an order of magnitude greater power density than the currently known fuel cells.

  13. Aging phenomena in polystyrene thin films

    E-Print Network [OSTI]

    Koji Fukao; Hiroki Koizumi

    2008-01-05T23:59:59.000Z

    The aging behavior is investigated for thin films of atactic polystyrene through measurements of complex electric capacitance. During isothermal aging process the real part of the electric capacitance increases with aging time, while the imaginary part decreases with aging time. This result suggests that the aging time dependence of the real and imaginary parts are mainly associated with change in thickness and dielectric permittivity, respectively. In thin films, the thickness depends on thermal history of aging even above the glass transition. Memory and `rejuvenation' effects are also observed in the thin films.

  14. Permanent laser conditioning of thin film optical materials

    DOE Patents [OSTI]

    Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

    1995-12-05T23:59:59.000Z

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

  15. Permanent laser conditioning of thin film optical materials

    DOE Patents [OSTI]

    Wolfe, C. Robert (Palo Alto, CA); Kozlowski, Mark R. (Pleasanton, CA); Campbell, John H. (Livermore, CA); Staggs, Michael (Tracy, CA); Rainer, Frank (Livermore, CA)

    1995-01-01T23:59:59.000Z

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

  16. Thin films and nanolaminates incorporating organic/inorganic Srinivas Manne and Ilhan A Aksay

    E-Print Network [OSTI]

    Aksay, Ilhan A.

    nanolaminates has ranged from fundamental studies of biomineralization to the synthesis of novel materials continued to inspire materials scientists, research involving organic/inorganic interfaces, thin layers in the synthesis and processing of inorganic thin films at organic interfaces and between organic layers

  17. THE MOTION OF SUPERCONDUCTING VORTICES IN THIN FILMS OF VARYING THICKNESS

    E-Print Network [OSTI]

    Chapman, Jon

    with superconductor/vacuum interfaces is considered. A vortex is #12;rst shown to intersect such an interface normallyTHE MOTION OF SUPERCONDUCTING VORTICES IN THIN FILMS OF VARYING THICKNESS S.J. CHAPMAN #3; D.R. HERON y MATHEMATICAL INSTITUTE OXFORD OX1 3LB UK Abstract. The interaction of superconducting vortices

  18. X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films

    E-Print Network [OSTI]

    to decrease with increasing structural disorder around Zn atoms, suggesting that the degradation in electron for photovoltaic applications by reducing interface recombination and improving device performance.12

  19. Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Jeffrey W. Elam,*, David A. Baker, Alex B. F. Martinson,, Michael J. Pellin, and

    E-Print Network [OSTI]

    precise coatings to be applied on all exposed surfaces of nanoporous substrates such as aerogels10 using ALD techniques to apply metal oxide coatings onto porous supports such as anodic aluminum oxide

  20. Nonisostructural complex oxide heteroepitaxy

    SciTech Connect (OSTI)

    Wong, Franklin J., E-mail: fwong@seas.harvard.edu; Ramanathan, Shriram [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)

    2014-07-01T23:59:59.000Z

    The authors present an overview of the fundamentals and representative examples of the growth of epitaxial complex oxide thin films on structurally dissimilar substrates. The authors will delineate how the details of particular crystal structures and symmetry of different oxide surfaces can be employed for a rational approach to the synthesis of nonisostructural epitaxial heterostructures. The concept of oxygen eutaxy can be widely applied. Materials combinations will be split into three categories, and in all cases the films and substrates occur in different crystal structures: (1) common translational and rotational symmetry between the film and substrate planes; (2) translational symmetry mismatch between the substrates and films that is distinct from a simple mismatch in lattice parameters; and (3) rotational symmetry mismatch. In case (1), in principle single-crystalline thin films can be attained despite the films and substrates possessing different crystal structures. In case (2), antiphase boundaries will be prevalent in the thin films. In case (3), thin-film rotational variants that are joined by tilt boundaries will be present. Diffraction techniques to determine crystallographic alignment and epitaxial variants are discussed, and transmission electron microscopy studies to investigate extended defects in the thin films will also be reviewed. The authors end with open problems in this field regarding the structure of oxide interfaces that can be topics for future research.

  1. Solid State Thin Film Lithium Microbatteries

    E-Print Network [OSTI]

    Shi, Z.

    Solid state thin film lithium microbatteries fabricated by pulsed-laser deposition (PLD) are suggested. During deposition the following process parameters must be considered, which are laser energy and fluence, laser pulse ...

  2. Nanomechanical properties of hydrated organic thin films

    E-Print Network [OSTI]

    Choi, Jae Hyeok

    2007-01-01T23:59:59.000Z

    Hydrated organic thin films are biological or synthetic molecularly thin coatings which impart a particular functionality to an underlying substrate and which have discrete water molecules associated with them. Such films ...

  3. Thermal Characterizationof Thin Film Superlattice Micro Refrigerators

    E-Print Network [OSTI]

    on a microscopic scale. Semiconductor lasers or other high power devices could also benefit from monolithic. Low contact resistance is essential for thin film coolers [3]. A 100 nm titanium metal layer was first

  4. Visible spectrometer utilizing organic thin film absorption

    E-Print Network [OSTI]

    Tiefenbruck, Laura C. (Laura Christine)

    2004-01-01T23:59:59.000Z

    In this thesis, I modeled and developed a spectrometer for the visible wavelength spectrum, based on absorption characteristics of organic thin films. The device uses fundamental principles of linear algebra to reconstruct ...

  5. Emergent Phenomena at Oxide Interfaces

    SciTech Connect (OSTI)

    Hwang, H.Y.

    2012-02-16T23:59:59.000Z

    Transition metal oxides (TMOs) are an ideal arena for the study of electronic correlations because the s-electrons of the transition metal ions are removed and transferred to oxygen ions, and hence the strongly correlated d-electrons determine their physical properties such as electrical transport, magnetism, optical response, thermal conductivity, and superconductivity. These electron correlations prohibit the double occupancy of metal sites and induce a local entanglement of charge, spin, and orbital degrees of freedom. This gives rise to a variety of phenomena, e.g., Mott insulators, various charge/spin/orbital orderings, metal-insulator transitions, multiferroics, and superconductivity. In recent years, there has been a burst of activity to manipulate these phenomena, as well as create new ones, using oxide heterostructures. Most fundamental to understanding the physical properties of TMOs is the concept of symmetry of the order parameter. As Landau recognized, the essence of phase transitions is the change of the symmetry. For example, ferromagnetic ordering breaks the rotational symmetry in spin space, i.e., the ordered phase has lower symmetry than the Hamiltonian of the system. There are three most important symmetries to be considered here. (i) Spatial inversion (I), defined as r {yields} -r. In the case of an insulator, breaking this symmetry can lead to spontaneous electric polarization, i.e. ferroelectricity, or pyroelectricity once the point group belongs to polar group symmetry. (ii) Time-reversal symmetry (T) defined as t {yields} -t. In quantum mechanics, the time-evolution of the wave-function {Psi} is given by the phase factor e{sup -iEt/{h_bar}} with E being the energy, and hence time-reversal basically corresponds to taking the complex conjugate of the wave-function. Also the spin, which is induced by the 'spinning' of the particle, is reversed by time-reversal. Broken T-symmetry is most naturally associated with magnetism, since the spin operator changes sign with T-operation. (iii) Gauge symmetry (G), which is associated with a change in the phase of the wave-function as {Psi} {yields} e{sup i{theta}}{Psi}. Gauge symmetry is connected to the law of charge conservation, and broken G-symmetry corresponds to superconductivity/superfluidity. To summarize, the interplay among these electronic degrees of freedom produces various forms of symmetry breaking patterns of I, T, and G, leading to novel emergent phenomena, which can appear only by the collective behavior of electrons and cannot be expected from individual electrons. Figure 1 shows this schematically by means of several representative phenomena. From this viewpoint, the interfaces of TMOs offer a unique and important laboratory because I is already broken by the structure itself, and the detailed form of broken I-symmetry can often be designed. Also, two-dimensionality usually enhances the effects of electron correlations by reducing their kinetic energy. These two features of oxide interfaces produce many novel effects and functions that cannot be attained in bulk form. Given that the electromagnetic responses are a major source of the physical properties of solids, and new gauge structures often appear in correlated electronic systems, we put 'emergent electromagnetism' at the center of Fig. 1.

  6. In situ synchrotron X-ray studies of dense thin-film strontium-doped lanthanum manganite solid oxide fuel cell cathodes

    E-Print Network [OSTI]

    Yildiz, Bilge

    oxide fuel cell cathodes Kee-Chul Chang1 , Brian Ingram2 , Balasubramaniam Kavaipatti3 , Bilge Yildiz4, suggesting that the electrochemistry plays a role in the Sr segregation. INTRODUCTION The solid oxide fuel cell (SOFC) has advantages of high efficiency and fuel-flexibility but is not yet economically

  7. Oxynitride Thin Film Barriers for PV Packaging

    SciTech Connect (OSTI)

    Glick, S. H.; delCueto, J. A.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2005-11-01T23:59:59.000Z

    Dielectric thin-film barrier and adhesion-promoting layers consisting of silicon oxynitride materials (SiOxNy, with various stoichiometry) were investigated. For process development, films were applied to glass (TCO, conductive SnO2:F; or soda-lime), polymer (PET, polyethylene terephthalate), aluminized soda-lime glass, or PV cell (a-Si, CIGS) substrates. Design strategy employed de-minimus hazard criteria to facilitate industrial adoption and reduce implementation costs for PV manufacturers or suppliers. A restricted process window was explored using dilute compressed gases (3% silane, 14% nitrous oxide, 23% oxygen) in nitrogen (or former mixtures, and 11.45% oxygen mix in helium and/or 99.999% helium dilution) with a worst-case flammable and non-corrosive hazard classification. Method employed low radio frequency (RF) power, less than or equal to 3 milliwatts per cm2, and low substrate temperatures, less than or equal to 100 deg C, over deposition areas less than or equal to 1000 cm2. Select material properties for barrier film thickness (profilometer), composition (XPS/FTIR), optical (refractive index, %T and %R), mechanical peel strength and WVTR barrier performance are presented.

  8. Optical Constants ofOptical Constants of Uranium Nitride Thin FilmsUranium Nitride Thin Films

    E-Print Network [OSTI]

    Hart, Gus

    Optical Constants ofOptical Constants of Uranium Nitride Thin FilmsUranium Nitride Thin FilmsDelta--Beta Scatter Plot at 220 eVBeta Scatter Plot at 220 eV #12;Why Uranium Nitride?Why Uranium Nitride? UraniumUranium, uranium,Bombard target, uranium, with argon ionswith argon ions Uranium atoms leaveUranium atoms leave

  9. Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

    DOE Patents [OSTI]

    Brinker, Charles Jeffrey (Albuquerque, NM); Prakash, Sai Sivasankaran (Minneapolis, MN)

    1999-01-01T23:59:59.000Z

    A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

  10. Thin film solar cell including a spatially modulated intrinsic layer

    DOE Patents [OSTI]

    Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

    1989-03-28T23:59:59.000Z

    One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

  11. Thin-film electrochemical power cells. Final report

    SciTech Connect (OSTI)

    Owens, B.B.; Smyrl, W.H.

    1991-01-01T23:59:59.000Z

    Fundamental properties of research cells were correlated with the projected performance of full scale power sources, considering both battery and supercapacitor concepts. In addition to establishing the data base for modelling and performance projections, the program had the additional objective of identifying loss mechanisms and degradation reactions, especially those unique to polymer thin film cell designs. Because of the intrinsic high electrode/electrolyte interface areas, interfacial reactions must be understood. Many applications require power under extreme conditions, and low temperature performance needs to be improved.

  12. Method of forming particulate materials for thin-film solar cells

    DOE Patents [OSTI]

    Eberspacher, Chris; Pauls, Karen Lea

    2004-11-23T23:59:59.000Z

    A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

  13. Thin film absorber for a solar collector

    DOE Patents [OSTI]

    Wilhelm, William G. (Cutchogue, NY)

    1985-01-01T23:59:59.000Z

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  14. MICROSTRUCTURE STUDY ON THE La0.7Sr0.3MnO3 AND RARE-EARTH OXIDE VERTICALLY ALIGNED NANOCOMPOSITE THIN FILMS 

    E-Print Network [OSTI]

    Hazariwala, Harshad

    2011-05-05T23:59:59.000Z

    in multilayer electronic devices. (3) the similar thermal expansion coefficient of CeO2 (9.5?10 -6/K) with STO (10.4?10-6/K) and LSMO (11.5?10-6/K). (4) the refractory character and low reactivity minimizing the interdiffusion during the growth. Those... are alternating with each other, indicating the self-assembly vertically aligned nanostructures. Large lattice mismatch between CeO2 and LSMO (33.2 %) favor the domain matching along out-of-plane interface (2(3) planes of CeO2 matching with 3(4) planes of LSMO...

  15. Thin film superconductors and process for making same

    DOE Patents [OSTI]

    Nigrey, P.J.

    1988-01-21T23:59:59.000Z

    A process for the preparation of oxide superconductors from high-viscosity non-aqueous solution is described. Solutions of lanthanide nitrates, alkaline earth nitrates and copper nitrates in a 1:2:3 stoichiometric ratio, when added to ethylene glycol containing citric acid solutions, have been used to prepare highly viscous non-aqueous solutions of metal mixed nitrates-citrates. Thin films of these compositions are produced when a layer of the viscous solution is formed on a substrate and subjected to thermal decomposition.

  16. Ferroelectric Thin-Film Active Sensors for Structural Health , Victor Giurgiutiu1

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    eliminate the bonding layer to improve the durability issue and reduce the acoustic impedance mismatch-crystal ferroelectrics but the fabrication of ferroelectric thin films on structural materials (steel, aluminum, titanium of approximately 80 nm in diameter and the good interface structures with no inter-diffusion or reaction

  17. Polymer surface and thin film vibrational dynamics of poly,,methyl methacrylate..., polybutadiene,

    E-Print Network [OSTI]

    Sibener, Steven

    Polymer surface and thin film vibrational dynamics of poly,,methyl methacrylate..., polybutadiene atom scattering has been used to investigate the vibrational dynamics at the polymer vacuum interface polymers. The broad multiphonon feature that arises in the inelastic scattering spectra at surface

  18. Vibration welding system with thin film sensor

    DOE Patents [OSTI]

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18T23:59:59.000Z

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  19. Method for synthesizing thin film electrodes

    DOE Patents [OSTI]

    Boyle, Timothy J. (Albuquerque, NM)

    2007-03-13T23:59:59.000Z

    A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

  20. Tungsten-doped thin film materials

    DOE Patents [OSTI]

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09T23:59:59.000Z

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  1. Mesoscale morphologies in polymer thin films.

    SciTech Connect (OSTI)

    Ramanathan, M.; Darling, S. B. (Center for Nanoscale Materials)

    2011-06-01T23:59:59.000Z

    In the midst of an exciting era of polymer nanoscience, where the development of materials and understanding of properties at the nanoscale remain a major R&D endeavor, there are several exciting phenomena that have been reported at the mesoscale (approximately an order of magnitude larger than the nanoscale). In this review article, we focus on mesoscale morphologies in polymer thin films from the viewpoint of origination of structure formation, structure development and the interaction forces that govern these morphologies. Mesoscale morphologies, including dendrites, holes, spherulites, fractals and honeycomb structures have been observed in thin films of homopolymer, copolymer, blends and composites. Following a largely phenomenological level of description, we review the kinetic and thermodynamic aspects of mesostructure formation outlining some of the key mechanisms at play. We also discuss various strategies to direct, limit, or inhibit the appearance of mesostructures in polymer thin films as well as an outlook toward potential areas of growth in this field of research.

  2. Thin film dielectric composite materials

    DOE Patents [OSTI]

    Jia, Quanxi (Los Alamos, NM); Gibbons, Brady J. (Los Alamos, NM); Findikoglu, Alp T. (Los Alamos, NM); Park, Bae Ho (Los Alamos, NM)

    2002-01-01T23:59:59.000Z

    A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

  3. Electrochromic control of thin film light scattering

    SciTech Connect (OSTI)

    Lindstroem, T.; Kullman, L.; Roennow, D.; Ribbing, C.; Granqvist, C.G. [Department of Technology, Uppsala University, P.O. Box 534, S-752 21, Uppsala (Sweden)] [Department of Technology, Uppsala University, P.O. Box 534, S-752 21, Uppsala (Sweden)

    1997-02-01T23:59:59.000Z

    Total and diffuse reflectance spectra were measured on Al surfaces covered with electrochromic W oxide films in colored and bleached states. Vector perturbation theory was used for analyzing the spectra. The diffuse reflectance appeared to originate from correlated (uncorrelated) interface roughness when the W oxide film was fully colored (bleached). Assuming partially correlated interfaces led to agreement between experimental and calculated spectra. The use of an electrochromic film appears a promising method to control the relative contributions of the interfaces to the resulting scattering. {copyright} {ital 1997 American Institute of Physics.}

  4. SAW determination of surface area of thin films

    DOE Patents [OSTI]

    Frye, Gregory C. (Albuquerque, NM); Martin, Stephen J. (Albuquerque, NM); Ricco, Antonio J. (Albuquerque, NM)

    1990-01-01T23:59:59.000Z

    N.sub.2 adsorption isotherms are measured from thin films on SAW devices. The isotherms may be used to determine the surface area and pore size distribution of thin films.

  5. Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization

    E-Print Network [OSTI]

    Bielecki, Anthony

    2013-01-01T23:59:59.000Z

    film solar cells. CIGS solar cell efficiencies have beenCIGS, making it a favorable choice for thin-film solar cells.thin film solar cell [3]. However, use of CIGS has a number

  6. Guided Self-Assembly of Gold Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Guided Self-Assembly of Gold Thin Films Guided Self-Assembly of Gold Thin Films Print Wednesday, 21 November 2012 12:18 Nanoparticles-man-made atoms with unique optical,...

  7. Piezoreslstive graphite/polyimide thin films for micromachining applications

    E-Print Network [OSTI]

    Piezoreslstive graphite/polyimide thin films for micromachining applications A. Bruno Frazier) In this work, graphite/polyimide composite thin films are introduced and characterized for micromachining tetracarboxylic dianhydride+xydianiline/metaphenylene diamine polyimide matrix. The resultant material represents

  8. The interplay between spatially separated ferromagnetic and superconducting thin films

    E-Print Network [OSTI]

    Sullivan, Isaac John

    2013-02-22T23:59:59.000Z

    Ferromagnetic thin films have been grown via physical vapor deposition utilizing the technique of flash evaporation and characterized by measuring magnetization as a function of magnetic field. An Al thin film was evaporated atop the ferromagnetic...

  9. au thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    micro-machine (see S. S. Irudayaraj and A. Emadi 15). In general, magnetic thin-film elements are used in many applications Hadiji, Rejeb 29 Thin Films of Chiral Motors...

  10. Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by Oxygen-plasma-assisted Molecular Beam Epitaxy. Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by...

  11. aluminium thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 21 Thin-Film Metamaterials called Sculptured Thin Films CERN Preprints Summary: Morphology...

  12. Ag Adsorption on Various Silica Thin Films Y. D. Kim, T. Wei, S. Wendt, and D. W. Goodman*

    E-Print Network [OSTI]

    Goodman, Wayne

    ,three-dimensionalmetalgrowthtypicallyoccurs. Defects sites, however, can lead to a much stronger interaction between the oxide and the metal,7 of metals with oxides is central to various technologies such as heterogeneous catalysts, electronic devices of many oxides. Such difficulties can be circumvented with the use of thin films of the oxide, films

  13. 3D-2D ASYMPTOTIC ANALYSIS FOR MICROMAGNETIC THIN FILMS

    E-Print Network [OSTI]

    3D-2D ASYMPTOTIC ANALYSIS FOR MICROMAGNETIC THIN FILMS Classification: 35E99, 35M10, 49J45, 74K35. Keywords: -limit, thin films, micromagnetics, relaxation; 1 1. Introduction In recent years the understanding of thin film behavior has been helped

  14. THIN FILM MECHANICS BULGING AND Ph.D Dissertation

    E-Print Network [OSTI]

    Huston, Dryver R.

    THIN FILM MECHANICS ­BULGING AND STRETCHING Ph.D Dissertation Mechanical Engineering University of Vermont Wolfgang Sauter October 2000 #12;ii Abstract Thin films have experienced revolutionary development for the intensive effort in research in materials and processing techniques. Thin film windows are window

  15. Electrified thin films: Global existence of non-negative solutions

    E-Print Network [OSTI]

    Boyer, Edmond

    Electrified thin films: Global existence of non-negative solutions C. Imbert and A. Mellet February 6, 2012 Abstract We consider an equation modeling the evolution of a viscous liquid thin film equation, Non-local equation, Thin film equation, Non-negative solutions MSC: 35G25, 35K25, 35A01, 35B09 1

  16. MICROSTRUCTURE AND MECHANICAL PROPERTIES OF ELECTROPLATED Cu THIN FILMS

    E-Print Network [OSTI]

    Volinsky, Alex A.

    MICROSTRUCTURE AND MECHANICAL PROPERTIES OF ELECTROPLATED Cu THIN FILMS A.A. Volinsky* , J. Vella size, thin film microstructure and mechanical properties have become critical parameters-K dielectric materials and novel interconnects (Cu). For most reliability tests, knowledge of the thin film

  17. Electrified thin films: Global existence of non-negative solutions

    E-Print Network [OSTI]

    Electrified thin films: Global existence of non-negative solutions C. Imbert and A. Mellet August 31, 2011 Abstract We consider an equation modeling the evolution of a viscous liquid thin film equation, Non-local equation, Thin film equation, Non-negative solutions MSC: 35G25, 35K25, 35A01, 35B09 1

  18. Thin Films for Microelectronics and Photonics: Physics, Mechanics,

    E-Print Network [OSTI]

    Volinsky, Alex A.

    4 Thin Films for Microelectronics and Photonics: Physics, Mechanics, Characterization, USA bUniversity of South Florida, Tampa, FL, USA 4.1. TERMINOLOGY AND SCOPE 4.1.1. Thin Films Thin practice. The term thin films as used here refers to material layers deposited by vapor

  19. Electrified thin films: Global existence of non-negative solutions

    E-Print Network [OSTI]

    Electrified thin films: Global existence of non-negative solutions C. Imbert and A. Mellet February 4, 2011 Abstract We consider an equation modeling the evolution of a viscous liquid thin film equation, Non-local equation, Thin film equation, Non-negative solutions MSC: 35G25, 35K25, 35A01, 35B09 1

  20. SEECOMMENTARYAPPLIEDPHYSICAL The macroscopic delamination of thin films from

    E-Print Network [OSTI]

    Reis, Pedro Miguel

    SEECOMMENTARYAPPLIEDPHYSICAL SCIENCES The macroscopic delamination of thin films from elastic toughness, our analysis suggests a number of design guidelines for the thin films used in flexible fatigue damage, the thin film thickness must be greater than a critical value, which we determine

  1. RisR980(EN) Epitaxy, Thin films and

    E-Print Network [OSTI]

    Risø­R­980(EN) Epitaxy, Thin films and Superlattices Morten Jagd Christensen Risø National of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in structures were investigated. This thesis, "Epitaxy, Thin films and Superlattices", is written in partial

  2. Polymer-Metal Nanocomposites via Polymer Thin Film

    E-Print Network [OSTI]

    Shyamasundar, R.K.

    Polymer-Metal Nanocomposites via Polymer Thin Film T. P. Radhakrishnan School of Chemistry, University of Hyderabad Polymer-metal nanocomposite thin films are versatile materials that not only Chemistry Inside a Polymer Thin Film P. Radhakrishnan School of Chemistry, University of Hyderabad metal

  3. Structural characterization and electronic structure of laser treated TiN thin film

    SciTech Connect (OSTI)

    Soni, Sheetal; Nair, K. G. M.; Phase, D. M.; Gupta, Ratnesh [School of Instrumentation, Devi Ahilya University, Khandwa road, Indore-452001 (India); Material Science Division, Indira Gandhi Center for Atomic Research, Kalpakkam 603 102 (India); UGC-DAE CSR, Indore Center, Khandwa Road, Indore 452 017 (India); School of Instrumentation, Devi Ahilya University, Khandwa road, Indore-452001 (India)

    2012-06-05T23:59:59.000Z

    TiN thin films prepared by laser treatment using Kr-F excimer laser in the controlled atmosphere. The depth distribution and composition of nitrogen and contaminated oxygen have been determined by non-Rutherford proton backscattering using 1.7 MeV Tendetron accelerator. The electronic structure of TiN thin film have been characterized by resonant photoelectron spectroscopy using indus-I synchrotron radiation. Specifically, complex resonance profile that shows the enhancement at 45 eV which is consistent with the resonant photoemission of Ti 3d states involved in the Titanium nitride and oxide.

  4. Influence of sputtering power on the optical properties of ITO thin films

    SciTech Connect (OSTI)

    K, Aijo John; M, Deepak, E-mail: manju.thankamoni@gmail.com; T, Manju, E-mail: manju.thankamoni@gmail.com [Department of Physics, Sree Sankara College, Kalady P. O., Ernakulam Dist., Kerala (India); Kumar, Vineetha V. [Dept. of Physics, K. E. College, Mannanam, Kottayam Dist., Kerala (India)

    2014-10-15T23:59:59.000Z

    Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

  5. Evaporation system and method for gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, Jerome J. (New Haven, CT); Halpern, Bret L. (Bethany, CT)

    1994-01-01T23:59:59.000Z

    A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.

  6. US polycrystalline thin film solar cells program

    SciTech Connect (OSTI)

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L. (Solar Energy Research Inst., Golden, CO (USA)) [Solar Energy Research Inst., Golden, CO (USA)

    1989-11-01T23:59:59.000Z

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the US Department of Energy's long-term goals by achieving high efficiencies (15%-20%), low-cost ($50/m{sup 2}), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The US Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe{sub 2} and CdTe with subcontracts to start in Spring 1990. 23 refs., 5 figs.

  7. Magnetic/metallic thin films and nanostructures

    E-Print Network [OSTI]

    Lewis, Robert Michael

    examples. During the past decade applications of nano-scale magnetic devices to data storage have hadMagnetic/metallic thin films and nanostructures The College of William and MarY;'l Virginia http://www.as.wm.cdu/Faculty/Lukaszcw.html It is widely believed that revolutionary progress can be made as materials and devices are developed to operate

  8. A thin film transistor driven microchannel device 

    E-Print Network [OSTI]

    Lee, Hyun Ho

    2005-02-17T23:59:59.000Z

    perturbation, an amorphous silicon (a-Si:H) thin film transistor (TFT) was connected to the microchannel device. The self-aligned a-Si:H TFT was fabricated with a two-photomask process. The result shows that the attachment of the TFT successfully suppressed...

  9. Realizing high-voltage thin film lateral bipolar transistors on SOI with a collector-tub

    E-Print Network [OSTI]

    Kumar, M. Jagadesh

    Realizing high-voltage thin film lateral bipolar transistors on SOI with a collector-tub Sukhendu-dimensional device simulation to examine the effect of a collector tub on the collector breakdown of the SOI based BJTs. This method involves creating a collector tub by etching the buried oxide followed by an n

  10. THE RATCHETING OF COMPRESSED THERMALLY GROWN THIN FILMS ON DUCTILE SUBSTRATES

    E-Print Network [OSTI]

    Hutchinson, John W.

    THE RATCHETING OF COMPRESSED THERMALLY GROWN THIN FILMS ON DUCTILE SUBSTRATES M. Y. HE1 , A. G by oxidation of the substrate. It is shown that, in some circumstances, ratcheting occurs, wherein which ratcheting does not occur. This critical size is related to the expansion mis®t, the substrate

  11. Silicon Oxynitride Thin Film Barriers for PV Packaging (Poster)

    SciTech Connect (OSTI)

    del Cueto, J. A.; Glick, S. H.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2006-10-03T23:59:59.000Z

    Dielectric, adhesion-promoting, moisture barriers comprised of silicon oxynitride thin film materials (SiOxNy with various material stoichiometric compositions x,y) were applied to: 1) bare and pre-coated soda-lime silicate glass (coated with transparent conductive oxide SnO2:F and/or aluminum), and polymer substrates (polyethylene terephthalate, PET, or polyethylene napthalate, PEN); plus 2) pre- deposited photovoltaic (PV) cells and mini-modules consisting of amorphous silicon (a-Si) and copper indium gallium diselenide (CIGS) thin-film PV technologies. We used plasma enhanced chemical vapor deposition (PECVD) process with dilute silane, nitrogen, and nitrous oxide/oxygen gas mixtures in a low-power (< or = 10 milliW per cm2) RF discharge at ~ 0.2 Torr pressure, and low substrate temperatures < or = 100(degrees)C, over deposition areas ~ 1000 cm2. Barrier properties of the resulting PV cells and coated-glass packaging structures were studied with subsequent stressing in damp-heat exposure at 85(degrees)C/85% RH. Preliminary results on PV cells and coated glass indicate the palpable benefits of the barriers in mitigating moisture intrusion and degradation of the underlying structures using SiOxNy coatings with thicknesses in the range of 100-200 nm.

  12. Monitoring plasma treatment of thin films by surface plasmon resonance

    SciTech Connect (OSTI)

    Laha, Ranjit, E-mail: laharanjit@gmail.com [Department of Physics, National Institute of Technology Raipur, 492010 Raipur (India)] [Department of Physics, National Institute of Technology Raipur, 492010 Raipur (India); Manivannan, A. [US Department of Energy, National Energy Technology Laboratory, Morgantown, West Virginia 26507 (United States)] [US Department of Energy, National Energy Technology Laboratory, Morgantown, West Virginia 26507 (United States); Kasiviswanathan, S. [Department of Physics, Indian Institute of Technology Madras, 600036 Chennai (India)] [Department of Physics, Indian Institute of Technology Madras, 600036 Chennai (India)

    2014-03-15T23:59:59.000Z

    We report the surface plasmon resonance (SPR) measurements during plasma treatment of thin films by an indigenously designed setup. From the measurements on Al (6.3 nm)/Ag (38 nm) bi-layer at a pressure of 0.02 mbar, the SPR position was found to be shifted by ?20° after a plasma treatment of ?7 h. The formation of oxide layers during plasma oxidation was confirmed by glancing angle x-ray diffraction (GXRD) measurements. Combined analysis of GXRD and SPR data confirmed that while top Al layer enables controlling plasma oxidation of Ag, the setup enables monitoring the same. The setup designed is a first of its kind for in situ SPR studies where creation of low pressure is a prerequisite.

  13. Electrochromism in copper oxide thin films

    E-Print Network [OSTI]

    Richardson, Thomas J.; Slack, Jonathan L.; Rubin, Michael D.

    2000-01-01T23:59:59.000Z

    by a variety of routes, and electrochromic behavior has beenof Cu x O films, electrochromic devices based onbeen investigated. Unlike electrochromic devices based on

  14. Doping in Zinc Oxide Thin Films

    E-Print Network [OSTI]

    Yang, Zheng

    2009-01-01T23:59:59.000Z

    = 5.8x10 (cm ) Magnetic Field (Telsa) Sl op e (c) August 19,20 ? A Magnetic Field (Telsa) T = 300 K Oh m T n = 6.25x10 /= 2.7x10 (cm ) Magnetic Field (Telsa) Magnetic Field (Telsa)

  15. Liquid phase deposition synthesis of hexagonal molybdenum trioxide thin films

    SciTech Connect (OSTI)

    Deki, Shigehito; Beleke, Alexis Bienvenu; Kotani, Yuki [Department of Chemical Science and Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokko, Nada, Kobe 657-8501 (Japan); Mizuhata, Minoru, E-mail: mizuhata@kobe-u.ac.j [Department of Chemical Science and Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokko, Nada, Kobe 657-8501 (Japan)

    2009-09-15T23:59:59.000Z

    Hexagonal molybdenum trioxide thin films with good crystallinity and high purity have been fabricated by the liquid phase deposition (LPD) technique using molybdic acid (H{sub 2}MoO{sub 4}) dissolved in 2.82% hydrofluoric acid (HF) and H{sub 3}BO{sub 3} as precursors. The crystal was found to belong to a hexagonal hydrate system MoO{sub 3}.nH{sub 2}O (napprox0.56). The unit cell lattice parameters are a=10.651 A, c=3.725 A and V=365.997 A{sup 3}. Scanning electron microscope (SEM) images of the as-deposited samples showed well-shaped hexagonal rods nuclei that grew and where the amount increased with increase in reaction time. X-ray photon electron spectroscopy (XPS) spectra showed a Gaussian shape of the doublet of Mo 3d core level, indicating the presence of Mo{sup 6+} oxidation state in the deposited films. The deposited films exhibited an electrochromic behavior by lithium intercalation and deintercalation, which resulted in coloration and bleaching of the film. Upon dehydration at about 450 deg. C, the hexagonal MoO{sub 3}.nH{sub 2}O was transformed into the thermodynamically stable orthorhombic phase. - Abstract: SEM photograph of typical h-MoO{sub 3}.nH{sub 2}O thin film nuclei obtained after 36 h at 40 deg. C by the LPD method. Display Omitted

  16. Anomalous Chemical Expansion Behavior of Pr[subscript 0.2]Ce[subscript 0.8]O[subscript 2-?] Thin Films Grown by Pulsed Laser Deposition

    E-Print Network [OSTI]

    Kuru, Y.

    The chemomechanical and electrical properties of (Pr,Ce)O[subscript 2-?] thin films were studied between 30 and 875°C in air by in situ X-ray diffraction and complex impedance spectroscopy measurements. Reduction/oxidation ...

  17. Characterization and control of non-stoichiometry in Pr?.?Ce?.?O?-[d?e?l?t?a?] thin films : correlation with SOFC electrode performance

    E-Print Network [OSTI]

    Chen, Di, Ph. D. Massachusetts Institute of Technology

    2014-01-01T23:59:59.000Z

    While the properties of functional oxide thin films often depend strongly on oxygen nonstoichiometry (6), there have been few means available for its measurement and control in a reliable and in-situ fashion. In this work, ...

  18. A comparative study of physico-chemical properties of CBD and SILAR grown ZnO thin films

    SciTech Connect (OSTI)

    Jambure, S.B.; Patil, S.J.; Deshpande, A.R.; Lokhande, C.D., E-mail: l_chandrakant@yahoo.com

    2014-01-01T23:59:59.000Z

    Graphical abstract: Schematic model indicating ZnO nanorods by CBD (Z{sub 1}) and nanograins by SILAR (Z{sub 2}). - Highlights: • Simple methods for the synthesis of ZnO thin films. • Comparative study of physico-chemical properties of ZnO thin films prepared by CBD and SILAR methods. • CBD outperforms SILAR method. - Abstract: In the present work, nanocrystalline zinc oxide (ZnO) thin films have been successfully deposited onto glass substrates by simple and economical chemical bath deposition (CBD) and successive ionic layer adsorption reaction (SILAR) methods. These films were further characterized for their structural, optical, surface morphological and wettability properties. The X-ray diffraction (XRD) patterns for both CBD and SILAR deposited ZnO thin films reveal the highly crystalline hexagonal wurtzite structure. From optical studies, band gaps obtained are 2.9 and 3.0 eV for CBD and SILAR deposited thin films, respectively. The scanning electron microscope (SEM) patterns show growth of well defined randomly oriented nanorods and nanograins on the CBD and SILAR deposited samples, respectively. The resistivity of CBD deposited films (10{sup 2} ? cm) is lower than that of SILAR deposited films (10{sup 5} ? cm). Surface wettability studies show hydrophobic nature for both films. From the above results it can be concluded that CBD grown ZnO thin films show better properties as compared to SILAR method.

  19. Electrostatic thin film chemical and biological sensor

    DOE Patents [OSTI]

    Prelas, Mark A. (Columbia, MO); Ghosh, Tushar K. (Columbia, MO); Tompson, Jr., Robert V. (Columbia, MO); Viswanath, Dabir (Columbia, MO); Loyalka, Sudarshan K. (Columbia, MO)

    2010-01-19T23:59:59.000Z

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  20. Polycrystalline thin films FY 1992 project report

    SciTech Connect (OSTI)

    Zweibel, K. [ed.

    1993-01-01T23:59:59.000Z

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  1. Thin film photovoltaic panel and method

    DOE Patents [OSTI]

    Ackerman, Bruce (El Paso, TX); Albright, Scot P. (El Paso, TX); Jordan, John F. (El Paso, TX)

    1991-06-11T23:59:59.000Z

    A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

  2. Packaging material for thin film lithium batteries

    DOE Patents [OSTI]

    Bates, John B. (116 Baltimore Dr., Oak Ridge, TN 37830); Dudney, Nancy J. (11634 S. Monticello Rd., Knoxville, TN 37922); Weatherspoon, Kim A. (223 Wadsworth Pl., Oak Ridge, TN 37830)

    1996-01-01T23:59:59.000Z

    A thin film battery including components which are capable of reacting upon exposure to air and water vapor incorporates a packaging system which provides a barrier against the penetration of air and water vapor. The packaging system includes a protective sheath overlying and coating the battery components and can be comprised of an overlayer including metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-metal-ceramic combination.

  3. PHOTOCATALYTIC GENERATION OF DISSOLVED OXYGEN AND OXYHEMOGLOBIN IN WHOLE BLOOD BASED ON THE INDIRECT INTERACTION OF UV LIGHT WITH A SEMICONDUCTING TITANIUM DIOXIDE THIN FILM

    SciTech Connect (OSTI)

    Gilbert, Richard J.; Carleton, Linda M.; Dasse, Kurt A.; Martin, Peter M.; Williford, Rick E.; Monzyk, Bruce F.

    2007-10-01T23:59:59.000Z

    Most current artificial lung technologies require the delivery of oxygen to the blood via permeable hollow fibers, depending on membrane diffusivity and differential partial pressure to drive gas exchange. We have identified an alternative approach in which dissolved oxygen (DO) is generated directly from the water content of blood through the indirect interaction of UV light with a semi-conducting titanium dioxide thin film. This reaction is promoted by photon absorption and displacement of electrons from the photoactive film, and yields a cascading displacement of electron “holes” to the aqueous interface resulting in the oxidation of water molecules to form DO. Anatase TiO2 (photocatalyst) and ITO (electrically conductive and light transparent) coatings were deposited onto quartz flow-cell plates by DC reactive magnetron sputtering. The crystal structure of the films was evaluated by grazing incidence X-Ray Diffraction (GIXRD), which confirmed that the primary crystal phase of the TiO2 thin film was anatase with a probable rutile secondary phase. Surface topology and roughness were determined by atomic force microscopy, demonstrating a stochastically uniform array of nanocrystallites. UV illumination of the titanium dioxide thin film through the quartz/ITO surface resulted in the rapid increase of DO and oxyhemoglobin in adjacent flowing blood on the opposite TiO2 surface at a rate of 1.28 x 10-5 mmol O2/sec. The rate of oxyhemoglobin generation was linearly proportional to residence time adjacent to the photoactive surface in a flow-through test cell under steady-state conditions. Preliminary biocompatibility for the proposed photocatalytic effect on whole blood demonstrated no increase in the rate of hemolysis or generation of toxic byproducts of photo-oxidation. These results demonstrate the feasibility and safety of employing optoelectronic mechanisms to promote oxygenation of hemoglobin in whole blood, and provide substantiation for the use of this technology as a mechanism for artificial respiratory support.

  4. Modeling of Substrate-Induced Anisotropy in Through-Plane Thermal Behavior of Polymeric Thin Films

    E-Print Network [OSTI]

    Lee, Jeong-Bong

    Modeling of Substrate-Induced Anisotropy in Through-Plane Thermal Behavior of Polymeric Thin Films, Atlanta, Georgia 30332-0269 SYNOPSIS Polymeric thin films are widely used in microelectronic applications properties of isotropic thin films for single layer (thin film rigidly clamped) and bilayer (thin film

  5. Photovoltaic effect of lead-free (Na{sub 0.82}K{sub 0.18}){sub 0.5}Bi{sub 4.5}Ti{sub 4}O{sub 15} ferroelectric thin film using Pt and indium tin oxide top electrodes

    SciTech Connect (OSTI)

    Seok Woo, Won; Sik Won, Sung; Won Ahn, Chang; Chae, Song A; Won Kim, Ill, E-mail: kimiw@mail.ulsan.ac.kr [Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 680-749 (Korea, Republic of); Ullah, Aman [Department of Physics, University of Science and Technology, Bannu, Khyber Pakhtunkhwa (Pakistan)

    2014-01-21T23:59:59.000Z

    We have grown a Bi-layer structure (Na{sub 0.82}K{sub 0.18}){sub 0.5}Bi{sub 4.5}Ti{sub 4}O{sub 15} (NKBiT) ferroelectric thin film on Pt(111)/TiO{sub 2}/SiO{sub 2}/Si(100) substrate by using the chemical solution deposition method and deposited two kinds of thin Pt and indium tin oxide (ITO) top electrodes. The photovoltaic behaviors of Pt/NKBiT/Pt and ITO/NKBit/Pt capacitors were investigated over the wavelength range of 300–500?nm. When NKBiT thin film is illuminated by the corresponding wavelength of the film's energy band gap (E{sub g}), a photocurrent is generated due to the Schottky barrier between electrode and film, and an internal electric field is originated by the depolarization field. The maximum photocurrent density and power conversion efficiency of the ITO/NKBiT/Pt capacitor in the poled-up state are obtained as 45.75?nA/cm{sup 2} and 0.035%, respectively, at 352?nm. The photocurrent density and power conversion efficiency of the ITO/NKBiT/Pt capacitor increased to 3.5 times higher than that of the Pt/NKBiT/Pt capacitor.

  6. Channel cracks in atomic-layer and molecular-layer deposited multilayer thin film coatings

    SciTech Connect (OSTI)

    Long, Rong, E-mail: rlongmech@gmail.com [Department of Mechanical Engineering, University of Alberta, Edmonton, Alberta T6G 2G8 (Canada); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Dunn, Martin L. [Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Singapore University of Technology and Design, Singapore 138682 (Singapore)

    2014-06-21T23:59:59.000Z

    Metal oxide thin film coatings produced by atomic layer deposition have been shown to be an effective permeation barrier. The primary failure mode of such coatings under tensile loads is the propagation of channel cracks that penetrate vertically into the coating films. Recently, multi-layer structures that combine the metal oxide material with relatively soft polymeric layers produced by molecular layer deposition have been proposed to create composite thin films with desired properties, including potentially enhanced resistance to fracture. In this paper, we study the effects of layer geometry and material properties on the critical strain for channel crack propagation in the multi-layer composite films. Using finite element simulations and a thin-film fracture mechanics formalism, we show that if the fracture energy of the polymeric layer is lower than that of the metal oxide layer, the channel crack tends to penetrate through the entire composite film, and dividing the metal oxide and polymeric materials into thinner layers leads to a smaller critical strain. However, if the fracture energy of the polymeric material is high so that cracks only run through the metal oxide layers, more layers can result in a larger critical strain. For intermediate fracture energy of the polymer material, we developed a design map that identifies the optimal structure for given fracture energies and thicknesses of the metal oxide and polymeric layers. These results can facilitate the design of mechanically robust permeation barriers, an important component for the development of flexible electronics.

  7. Long-laser-pulse method of producing thin films

    DOE Patents [OSTI]

    Balooch, Mehdi (Berkeley, CA); Olander, Donald K. (Berkeley, CA); Russo, Richard E. (Walnut Creek, CA)

    1991-01-01T23:59:59.000Z

    A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agen The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.

  8. Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

    DOE Patents [OSTI]

    Ruffner, Judith A. (Albuquerque, NM); Bullington, Jeff A. (Albuquerque, NM); Clem, Paul G. (Albuquerque, NM); Warren, William L. (Albuquerque, NM); Brinker, C. Jeffrey (Albuquerque, NM); Tuttle, Bruce A. (Albuquerque, NM); Schwartz, Robert W. (Seneca, SC)

    1999-01-01T23:59:59.000Z

    A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.

  9. applications thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nikolay 27 Solvent-enhanced dye diffusion in polymer thin films for polymer light-emitting diode application Engineering Websites Summary: Solvent-enhanced dye diffusion in...

  10. Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization

    E-Print Network [OSTI]

    Bielecki, Anthony

    2013-01-01T23:59:59.000Z

    Photovoltaics . . . . . . . . . . . . . . . . . . . . . . .2 ZnSnS 4 (CZTS) thin film photovoltaics is an increasinglyfor Large-Scale Photovoltaics Deployment Environ. Sci.

  11. Thermoelectric effect in very thin film Pt/Au thermocouples

    E-Print Network [OSTI]

    Salvadori, M.C.; Vaz, A.R.; Teixeira, F.S.; Cattani, M.; Brown, I.G.

    2006-01-01T23:59:59.000Z

    TABLE I. Measured thermoelectric power S for samples ofThermoelectric effect in very thin film Pt/Au thermocouplesthickness dependence of the thermoelectric power of Pt films

  12. Rechargeable thin film battery and method for making the same

    DOE Patents [OSTI]

    Goldner, Ronald B.; Liu, Te-Yang; Goldner, Mark A.; Gerouki, Alexandra; Haas, Terry E.

    2006-01-03T23:59:59.000Z

    A rechargeable, stackable, thin film, solid-state lithium electrochemical cell, thin film lithium battery and method for making the same is disclosed. The cell and battery provide for a variety configurations, voltage and current capacities. An innovative low temperature ion beam assisted deposition method for fabricating thin film, solid-state anodes, cathodes and electrolytes is disclosed wherein a source of energetic ions and evaporants combine to form thin film cell components having preferred crystallinity, structure and orientation. The disclosed batteries are particularly useful as power sources for portable electronic devices and electric vehicle applications where high energy density, high reversible charge capacity, high discharge current and long battery lifetimes are required.

  13. active thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    behavior Biotechnology Websites Summary: on elastic polymeric membranes. Further development of such muscular thin films for building actuators). The development of such...

  14. Institute of Photo Electronic Thin Film Devices and Technology...

    Open Energy Info (EERE)

    Place: Tianjin Municipality, China Zip: 300071 Sector: Solar Product: A thin-film solar cell research institute in China. References: Institute of Photo-Electronic Thin...

  15. antibacterial thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Skovlin, Dean Oliver 2012-06-07 138 Uncooled Thin Film Pyroelectric IR Detector with Aerogel Thermal Isolation CiteSeer Summary: Uncooled pyroelectric IR imaging systems, such...

  16. alumina thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

  17. acid thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

  18. Tax Credits Give Thin-Film Solar a Big Boost

    Broader source: Energy.gov [DOE]

    California company will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.

  19. almgb14 thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  20. aggase2 thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  1. ablation thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

  2. aln thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    deposited by the reactive dc magnetron sputtering technique at room, amorphous and polycrystalline GaN thin films have been deposited using the magnetron sputtering...

  3. anatase thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

  4. area thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  5. aluminide thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  6. antiferroelectric thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  7. ain thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  8. advanced thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  9. arsenide thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

  10. Thickness Dependency of Thin Film Samaria Doped Ceria for Oxygen...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    High temperature oxygen sensors are widely used for exhaust gas monitoring in automobiles. This particular study explores the use of thin film single crystalline samaria...

  11. Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

    DOE Patents [OSTI]

    Simpson, Lin Jay

    2013-12-17T23:59:59.000Z

    A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

  12. Method of physical vapor deposition of metal oxides on semiconductors

    DOE Patents [OSTI]

    Norton, David P. (Knoxville, TN)

    2001-01-01T23:59:59.000Z

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  13. Thin film seeds for melt processing textured superconductors for practical applications

    DOE Patents [OSTI]

    Veal, Boyd W. (Downers Grove, IL); Paulikas, Arvydas (Downers Grove, IL); Balachandran, Uthamalingam (Hinsdale, IL); Zhong, Wei (West Lafayette, IN)

    1999-01-01T23:59:59.000Z

    A method of fabricating bulk superconducting material such as RBa.sub.2 Cu.sub.3 O.sub.7-.delta. where R is La or Y comprising depositing a thin epitaxially oriented film of Nd or Sm (123) on an oxide substrate. The powder oxides of RBa.sub.2 Cu.sub.3 O.sub.7-.delta. or oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa.sub.2 Cu.sub.3 O.sub.7-.delta., where R is Y or La are heated, in physical contact with the thin film of Nd or Sm (123) on the oxide substrate to a temperature sufficient to form a liquid phase in the oxide or carbonate mixture while maintaining the thin film solid to grow a large single domain 123 superconducting material. Then the material is cooled. The thin film is between 200 .ANG. and 2000 .ANG.. A construction prepared by the method is also disclosed.

  14. Thin film seeds for melt processing textured superconductors for practical applications

    DOE Patents [OSTI]

    Veal, B.W.; Paulikas, A.; Balachandran, U.; Zhong, W.

    1999-02-09T23:59:59.000Z

    A method of fabricating bulk superconducting material such as RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} where R is La or Y comprising depositing a thin epitaxially oriented film of Nd or Sm (123) on an oxide substrate is disclosed. The powder oxides of RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} or oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}, where R is Y or La are heated, in physical contact with the thin film of Nd or Sm (123) on the oxide substrate to a temperature sufficient to form a liquid phase in the oxide or carbonate mixture while maintaining the thin film solid to grow a large single domain 123 superconducting material. Then the material is cooled. The thin film is between 200 {angstrom} and 2000 {angstrom}. A construction prepared by the method is also disclosed.

  15. Effect of Polarization and Morphology on the Optical Properties of Absorbing Nanoporous Thin Films

    E-Print Network [OSTI]

    Navid, Ashcon; Pilon, Laurent

    2008-01-01T23:59:59.000Z

    TE and TM waves incident on thin films with n c = 4.0, k c =hexagonal mesoporous silica thin films with pore diameter Dabsorbing nanocomposite thin film, graphically depicting the

  16. Charge transport and chemical sensing properties of organic thin-films

    E-Print Network [OSTI]

    Yang, Dengliang

    2007-01-01T23:59:59.000Z

    low Drift in Organic Thin-film Transistor Chemical Sensors”,emitting diodes and thin-film transistors. The electricalLOW DRIFT IN ORGANIC THIN-FILM TRANSISTOR CHEMICAL SENSORS

  17. Distributed Phase Shifter with PyrochloreBismuth Zinc Niobate Thin Films

    E-Print Network [OSTI]

    Park, Jaehoon; Lu, Jiwei; Boesch, Damien; Stemmer, Susanne; York, Robert A

    2006-01-01T23:59:59.000Z

    Bandpass Filter Using Thin-Film Barium-Strontium-Titanate (using Ba x Sr 1 - x TiO 3 thin films," IEEE Microwave GuidedBismuth Zinc Niobate Thin Films," J. Appl. Phys. 97,

  18. Epitaxial Stabilization of a Morphotropic Phase Boundary in Lead-Free Ferroelectric Thin Films

    E-Print Network [OSTI]

    Zeches, Robert James

    2011-01-01T23:59:59.000Z

    1376 (2005). D. L. Smith, Thin-Film Deposition PrinciplesMaterials Science of Thin Films, (Academic Press: San Diego,Laser Deposition of Thin Films, (John Wiley & Sons, Inc. :

  19. Influence of oxygen on the interfacial stability of Cu on Co,,0001... thin films Hongmei Wen,1 Matthew Neurock,1,

    E-Print Network [OSTI]

    Wadley, Haydn

    Influence of oxygen on the interfacial stability of Cu on Co,,0001... thin films Hongmei Wen,1 of oxygen, which can impact the quality of film and its properties. Previously we found that oxygen to examine the effects of surface atomic oxygen on the stability of the Cu 111 /Co 0001 interface

  20. Adhesion and Thin-Film Module Reliability: Preprint

    SciTech Connect (OSTI)

    McMahon, T. J.; Jorgensen, G. J.

    2006-05-01T23:59:59.000Z

    Among the infrequently measured but essential properties for thin-film (T-F) module reliability are the interlayer adhesion and cohesion within a layer. These can be cell contact layers to glass, contact layers to the semiconductor, encapsulant to cell, glass, or backsheet, etc. We use an Instron mechanical testing unit to measure peel strengths at 90{sup o} or 180{sup o} and, in some cases, a scratch and tape pull test to evaluate inter-cell layer adhesion strengths. We present peel strength data for test specimens laminated from the three T-F technologies, before and after damp heat, and in one instance at elevated temperatures. On laminated T-F cell samples, failure can occur uniformly at any one of the many interfaces, or non-uniformly across the peel area at more than one interface. Some peel strengths are << 1 N/mm. This is far below the normal Instron mechanical testing unit Instron mechanical testing unit; glass interface values of >10 N/mm. We measure a wide range of adhesion strengths and suggest that adhesion measured under higher temperature and relative humidity conditions is more relevant for module reliability.

  1. Electrochromic properties of tungsten trioxide thin films prepared by photochemical vapor deposition

    SciTech Connect (OSTI)

    Maruyama, Toshiro; Kanagawa, Tetsuya (Kyoto Univ. (Japan). Dept. of Chemical Engineering)

    1994-09-01T23:59:59.000Z

    Electrochromic tungsten trioxide thin films were prepared by a photochemical vapor deposition. The source material was tungsten carbonyl. A 6 W low pressure mercury lamp was used as a light source. Amorphous tungsten trioxide thin films were obtained at a substrate temperature of 200 C. The UV radiation enhances the oxidation of tungsten, in addition to the acceleration of the deposition of the films. Reduction and oxidation of the films in a 0.3M LiClO[sub 4] propylene carbonate solution resulted in desirable changes in optimal absorption. The bleaching time was short compared to the amorphous CVD film. Coulometry indicated that the coloration efficiency was 222 cm[sup 2]/C.

  2. Highly conducting SrMoO{sub 3} thin films for microwave applications

    SciTech Connect (OSTI)

    Radetinac, Aldin, E-mail: aldin@oxide.tu-darmstadt.de; Mani, Arzhang; Ziegler, Jürgen; Alff, Lambert; Komissinskiy, Philipp, E-mail: komissinskiy@oxide.tu-darmstadt.de [Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany); Melnyk, Sergiy; Nikfalazar, Mohammad; Zheng, Yuliang; Jakoby, Rolf [Institute for Microwave Engineering and Photonics, TU Darmstadt, Merckstraße 25, 64283 Darmstadt (Germany)

    2014-09-15T23:59:59.000Z

    We have measured the microwave resistance of highly conducting perovskite oxide SrMoO{sub 3} thin film coplanar waveguides. The epitaxial SrMoO{sub 3} thin films were grown by pulsed laser deposition and showed low mosaicity and smooth surfaces with a root mean square roughness below 0.3?nm. Layer-by-layer growth could be achieved for film thicknesses up to 400?nm as monitored by reflection high-energy electron diffraction and confirmed by X-ray diffraction. We obtained a constant microwave resistivity of 29???·cm between 0.1 and 20?GHz by refining the frequency dependence of the transmission coefficients. Our result shows that SrMoO{sub 3} is a viable candidate as a highly conducting electrode material for all-oxide microwave electronic devices.

  3. The Electrodeless Discharge Lamps Coated with the Titania Thin Film for Photocatalysis in a Microwave Field

    E-Print Network [OSTI]

    Cirkva, Vladimir

    The Electrodeless Discharge Lamps Coated with the Titania Thin Film for Photocatalysis assisted photocatalysis using TiO2 thin films has been examined. Several factors influencing

  4. A survey of thin-film solar photovoltaic industry & technologies

    E-Print Network [OSTI]

    Grama, Sorin

    2007-01-01T23:59:59.000Z

    A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

  5. Wave propagation in highly inhomogeneous thin films: exactly solvable models

    E-Print Network [OSTI]

    Boyer, Edmond

    Wave propagation in highly inhomogeneous thin films: exactly solvable models Guillaume Petite(1 of wave propagation in some inhomogeneous thin films with highly space- dependent dielectric constant will show that depending on the type of space dependence, an incident wave can either propagate or tunnel

  6. Electrical properties of quench-condensed thin film 

    E-Print Network [OSTI]

    Lee, Kyoungjin

    2009-05-15T23:59:59.000Z

    . The apparatus was shown to operate well for the fabrication of thin films while monitoring the growth in-situ. As a part of the preliminary research, we measured the electrical properties of aluminum thin films at liquid nitrogen temperature by using...

  7. VACUUM PUMPING STUDY OF TITANIUM-ZIRCONIUM-VANADIUM THIN FILMS*

    E-Print Network [OSTI]

    ERL 03-8 VACUUM PUMPING STUDY OF TITANIUM-ZIRCONIUM-VANADIUM THIN FILMS* Yulin Li# and Simon Ho high vacuum. As part of R&D efforts for the proposed Energy Recovery Linac at Cornell, the pumping performance of Titanium- Zirconium-Vanadium (TiZrV) NEG thin films was investigated to provide `engineering

  8. Fundamentals of polycrystalline thin film materials and devices

    SciTech Connect (OSTI)

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. (Delaware Univ., Newark, DE (USA). Inst. of Energy Conversion)

    1991-01-01T23:59:59.000Z

    This report presents the results of a one-year research program on polycrystalline thin-film solar cells. The research was conducted to better understand the limitations and potential of solar cells using CuInSe{sub 2} and CdTe by systematically investigating the fundamental relationships linking material processing, material properties, and device behavior. By selenizing Cu and In layers, we fabricated device-quality CuInSe{sub 2} thin films and demonstrated a CuInSe{sub 2} solar cell with 7% efficiency. We added Ga, to increase the band gap of CuInSe{sub 2} devices to increase the open-circuit voltage to 0.55 V. We fabricated and analyzed Cu(InGa)Se{sub 2}/CuInSe{sub 2} devices to demonstrate the potential for combining the benefits of higher V{sub oc} while retaining the current-generating capacity of CuInSe{sub 2}. We fabricated an innovative superstrate device design with more than 5% efficiency, as well as a bifacial spectral-response technique for determining the electron diffusion length and optical absorption coefficient of CuInSe{sub 2} in an operational cell. The diffusion length was found to be greater than 1 {mu}m. We qualitatively modeled the effect of reducing heat treatments in hydrogen and oxidizing treatments in air on the I-V behavior of CuInSe{sub 2} devices. We also investigated post-deposition heat treatments and chemical processing and used them to fabricate a 9.6%-efficient CdTe/CdS solar cell using physical vapor deposition.

  9. Apparatus for laser assisted thin film deposition

    DOE Patents [OSTI]

    Warner, Bruce E. (Pleasanton, CA); McLean, II, William (Oakland, CA)

    1996-01-01T23:59:59.000Z

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

  10. Rechargeable thin-film lithium batteries

    SciTech Connect (OSTI)

    Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

    1993-09-01T23:59:59.000Z

    Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

  11. Apparatus for laser assisted thin film deposition

    DOE Patents [OSTI]

    Warner, B.E.; McLean, W. II

    1996-02-13T23:59:59.000Z

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

  12. 335Nanostructured ZnO and ZAO transparent thin films by sputteringsurface characterization Corresponding author: M. Suchea, e-mail: mirasuchea@iesl.forth.gr

    E-Print Network [OSTI]

    as transparent electrode in solar cells and flat panel displays as well as for the fabrication of gratings Abstract. Zinc oxide (ZnO) and aluminum zinc oxide (ZAO) transparent thin films with different thickness Zinc oxide is one of the earliest discovered metal oxide gas sensing materials. It is an n-type semi

  13. Electrochemical preparation of poly(methylene blue)/graphene nanocomposite thin films

    SciTech Connect (OSTI)

    Erçar?kc?, Elif; Da?c?, Kader; Topçu, Ezgi; Alanyal?o?lu, Murat, E-mail: malanya@atauni.edu.tr

    2014-07-01T23:59:59.000Z

    Highlights: • Poly(MB)/graphene thin films are prepared by a simple electrochemical approach. • Graphene layers in the film show a broad band in visible region of absorbance spectra. • Morphology of composite films indicates both disordered and ordered regions. • XRD reveals that nanocomposite films include rGO layers after electropolymerization process. • Chemically prepared graphene is better than electrochemically prepared graphene for electrooxidation of nitrite. - Abstract: Poly(methylene blue)/graphene nanocomposite thin films were prepared by electropolymerization of methylene blue in the presence of graphene which have been synthesized by two different methods of a chemical oxidation process and an electrochemical approach. Synthesized nanocomposite thin films were characterized by using cyclic voltammetry, UV–vis. absorption spectroscopy, powder X-ray diffraction, and scanning tunneling microscopy techniques. Electrocatalytical properties of prepared poly(methylene blue)/graphene nanocomposite films were compared toward electrochemical oxidation of nitrite. Under optimized conditions, electrocatalytical effect of nanocomposite films of chemically prepared graphene through electrochemical oxidation of nitrite was better than that of electrochemically prepared graphene.

  14. ZnO transparent thin films for gas sensor applications M. Suchea a,b,, S. Christoulakis a,b

    E-Print Network [OSTI]

    in solar cells and flat panel displays as well as for the fabrication of gratings in optoelectronic de analysis of thin films sputtered from a ceramic target has shown a completely different surface behavior of the earliest discovered metal oxide gas sensing materials. It is an n-type semiconductor of wurtzite structure

  15. Metal and Ceramic Thin Film Growth by Reaction of Alkali Metals with Metal Halides: A New Route for

    E-Print Network [OSTI]

    Zachariah, Michael R.

    or metal oxide ceramic films are easily formed by the introduction of nitrogen or oxygen gases the precursors of sodium metal vapor, titanium tetrachloride (the limiting reagent), and either Ar or N2 gas, salt-free titanium (Ti), titanium nitride (TiN), and titanium silicide (TixSiy) thin films have been

  16. Factors influencing charge capacity of vanadium pentoxide thin films during lithium ion intercalation/deintercalation cycles

    SciTech Connect (OSTI)

    Alamarguy, D.; Castle, J. E.; Ibris, N.; Salvi, A. M. [University of Surrey, Guildford GU2 7XH (United Kingdom); Dipartimento di Chimica, Universita degli Studi della Basilicata, Potenza, Via N. Sauro, 85-85100 (Italy)

    2007-11-15T23:59:59.000Z

    The intercalation of vanadium pentoxide by lithium ions leads to a change in optical properties, a process that is of value in thin-film electrochromic devices. In this study, films of V{sub 2}O{sub 5}, deposited on indium tin oxide (ITO) glass coupons by a sol-gel process, were challenged by increasing numbers of charge-discharge cycles ranging from 72 to 589 full cycles. The samples were characterized by x-ray photoelectron spectroscopy (XPS) and then examined in the deintercalated state by time-of-flight secondary ion mass spectroscopy (SIMS). XPS enabled measurement of the thickness and composition of the solid-electrolyte interface and provided evidence of the residual V{sup 4+} concentration within the top few nanometers of the surface. The SIMS profile gave direct information on the thickness of the films and on the thickness loss caused by rinsing the samples after the electrochemical exposure. Determination, by SIMS, of the concentration of lithium ions has enabled a correction to be made for the amount of inactive material within the electrochemically active region of the film. The SIMS depth profiles for lithium in the four samples are similar, with a marked buildup of Li at the interface with the ITO. This interphase zone had a thickness of {approx}27 nm and was electrochemically inactive, enabling a further correction to be made. Thus, by means of the XPS and the SIMS results the chemistry and thickness of the films could be fully characterized. The remaining inconsistency between capacity (between 35% and 100% of the anticipated charge) and number of cycles is ascribed to edge effects arising from the method used for production of the coupons.

  17. Rechargeable thin-film electrochemical generator

    DOE Patents [OSTI]

    Rouillard, Roger (Beloeil, CA); Domroese, Michael K. (South St. Paul, MN); Hoffman, Joseph A. (Minneapolis, MN); Lindeman, David D. (Hudson, WI); Noel, Joseph-Robert-Gaetan (St-Hubert, CA); Radewald, Vern E. (Austin, TX); Ranger, Michel (Lachine, CA); Sudano, Anthony (Laval, CA); Trice, Jennifer L. (Eagan, MN); Turgeon, Thomas A. (Fridley, MN)

    2000-09-15T23:59:59.000Z

    An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

  18. Glow discharge plasma deposition of thin films

    DOE Patents [OSTI]

    Weakliem, Herbert A. (Pennington, NJ); Vossen, Jr., John L. (Bridgewater, NJ)

    1984-05-29T23:59:59.000Z

    A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

  19. Thin films of mixed metal compounds

    DOE Patents [OSTI]

    Mickelsen, R.A.; Chen, W.S.

    1985-06-11T23:59:59.000Z

    Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

  20. Thin films versus 2D sheets in layered structures: graphene and 2D metallic sheets

    E-Print Network [OSTI]

    Bo E. Sernelius

    2012-09-19T23:59:59.000Z

    We study an interface between two media separated by a strictly 2D sheet. We show how the amplitude reflection coefficient can be modeled by that for an interface where the 2D sheet has been replaced by a film of small but finite thickness. We give the relationship between the 3D dielectric function of the thin film and the 2D dielectric function of the sheet. We choose graphene and a 2D metallic sheet as illustrative examples. This approach turns out to be very useful when treating graphene or graphene like sheets in non-planar structures

  1. Enhanced stimulated emission in ZnO thin films using microdisk top-down structuring

    SciTech Connect (OSTI)

    Nomenyo, K.; Kostcheev, S.; Lérondel, G. [Laboratoire de Nanotechnologie et d'Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Gadallah, A.-S. [Laboratoire de Nanotechnologie et d'Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Department of Laser Sciences and Interactions, National Institute of Laser Enhanced Sciences, Cairo University, Giza (Egypt); Rogers, D. J. [Nanovation, 8, route de Chevreuse, 78117 Châteaufort (France)

    2014-05-05T23:59:59.000Z

    Microdisks were fabricated in zinc oxide (ZnO) thin films using a top-down approach combining electron beam lithography and reactive ion etching. These microdisk structured thin films exhibit a stimulated surface emission between 3 and 7 times higher than that from a reference film depending on the excitation power density. Emission peak narrowing, reduction in lasing threshold and blue-shifting of the emission wavelength were observed along with enhancement in the emitted intensity. Results indicate that this enhancement is due to an increase in the internal quantum efficiency combined with an amplification of the stimulated emission. An analysis in terms of waveguiding is presented in order to explain these effects. These results demonstrate that very significant gains in emission can be obtained through conventional microstructuration without the need for more onerous top-down nanostructuration techniques.

  2. Flat panel display using Ti-Cr-Al-O thin film

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Schmid, Anthony P. (Solan Beach, CA)

    2002-01-01T23:59:59.000Z

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  3. Process for producing Ti-Cr-Al-O thin film resistors

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Schmid, Anthony P. (Solana Beach, CA)

    2001-01-01T23:59:59.000Z

    Thin films of Ti-Cr-Al-O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti-Cr-Al-O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti-Cr-Al-O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti-Cr-Al-O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  4. Biologically Inspired Synthesis Route to Three-Dimensionally Structured Inorganic Thin Films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Schwenzer, Birgit; Morse, Daniel E.

    2008-01-01T23:59:59.000Z

    Inorganic thin films (hydroxide, oxide, and phosphate materials) that are textured on a submicron scale have been prepared from aqueous metal salt solutions at room temperature using vapor-diffusion catalysis. This generic synthesis approach mimics the essential advantages of the catalytic and structure-directing mechanisms observed for the formation of silica skeletons of marine sponges. Chemical composition, crystallinity, and the three-dimensional morphology of films prepared by this method are extremely sensitive to changes in the synthesis conditions, such as concentrations, reaction times, and the presence and nature of substrate materials. Focusing on different materials systems, the reaction mechanism for the formation ofmore »these thin films and the influence of different reaction parameters on the product are explained.« less

  5. Structural, magnetic, and electronic properties of GdTiO{sub 3} Mott insulator thin films grown by pulsed laser deposition

    SciTech Connect (OSTI)

    Grisolia, M. N.; Bruno, F. Y.; Sando, D.; Jacquet, E.; Barthélémy, A.; Bibes, M., E-mail: manuel.bibes@thalesgroup.com [Unité Mixte de Physique, CNRS-Thales, 1 Av. Augustin Fresnel, Campus de l'Ecole Polytechnique, 91120 Palaiseau, France and Université Paris-Sud, 91405 Orsay (France); Zhao, H. J. [Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Chen, X. M. [Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Bellaiche, L. [Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States)

    2014-10-27T23:59:59.000Z

    We report on the optimization process to synthesize epitaxial thin films of GdTiO{sub 3} on SrLaGaO{sub 4} substrates by pulsed laser deposition. Optimized films are free of impurity phases and are fully strained. They possess a magnetic Curie temperature T{sub C}?=?31.8?K with a saturation magnetization of 4.2??{sub B} per formula unit at 10?K. Transport measurements reveal an insulating response, as expected. Optical spectroscopy indicates a band gap of ?0.7?eV, comparable to the bulk value. Our work adds ferrimagnetic orthotitanates to the palette of perovskite materials for the design of emergent strongly correlated states at oxide interfaces using a versatile growth technique such as pulsed laser deposition.

  6. A Free Energy Model for Thin-film Shape Memory Alloys Jordan E. Massad*1

    E-Print Network [OSTI]

    Mechanical & Aerospace Engineering Dept., UCLA, Los Angeles, CA 90095 ABSTRACT Thin-film shape memory alloysA Free Energy Model for Thin-film Shape Memory Alloys Jordan E. Massad*1 , Ralph C. Smith1 and Greg comparison with thin-film NiTi superelastic hysteresis data. Keywords: Shape memory alloy model; thin film

  7. Crystallization and Martensitic Transformation Behavior of NiTi Shape Memory Alloy Thin Films

    E-Print Network [OSTI]

    Crystallization and Martensitic Transformation Behavior of NiTi Shape Memory Alloy Thin Films Alloy Thin Films Abstract The microstructure evolution and shape memory properties of near-equiatomic Ni-Ti thin films were investigated. Ni-Ti thin films sputter-deposited at room tem- perature are usually

  8. DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

  9. LIQUID PHASE DEPOSITION OF ELECTROCHROMIC THIN FILMS T. J. Richardson and M. D. Rubin

    E-Print Network [OSTI]

    , and readily scalable to larger substrates. Keywords: liquid phase deposition; electrochromic films; thin film

  10. AP-XPS Measures MIEC Oxides in Action

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    H2O electrolysis and H2 oxidation, dense thin-film CeO2-x electrodes with Au current collectors were deposited onto YSZ electrolytes with a thin-film Pt counter electrode. The...

  11. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect (OSTI)

    Kova?evi?, Goran, E-mail: gkova@irb.hr; Pivac, Branko [Department of Materials Physics, Rudjer Boskovic Institute, Bijeni?ka 56, P.O.B. 180, HR-10002 Zagreb (Croatia)

    2014-01-28T23:59:59.000Z

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  12. Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4} devices

    SciTech Connect (OSTI)

    Varley, J. B.; Lordi, V. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

    2014-08-14T23:59:59.000Z

    We investigate point defects in the buffer layers CdS and ZnS that may arise from intermixing with Cu(In,Ga)(S,Se){sub 2} (CIGS) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical behavior of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities in the buffer. We find that In and Ga substituted on the cation site act as shallow donors in CdS and tend to enhance the prevailing n-type conductivity at the interface facilitated by Cd incorporation in CIGS, whereas they are deep donors in ZnS and will be less effective dopants. Substitutional In and Ga can favorably form complexes with cation vacancies (A-centers) which may contribute to the “red kink” effect observed in some CIGS-based devices. For CZTS absorbers, we find that Zn and Sn defects substituting on the buffer cation site are electrically inactive in n-type buffers and will not supplement the donor doping at the interface as in CIGS/CdS or ZnS devices. Sn may also preferentially incorporate on the S site as a deep acceptor in n-type ZnS, which suggests possible concerns with absorber-related interfacial compensation in CZTS devices with ZnS-derived buffers. Cu, Na, and K impurities are found to all have the same qualitative behavior, most favorably acting as compensating acceptors when substituting on the cation site. Our results suggest one beneficial role of K and Na incorporation in CIGS or CZTS devices is the partial passivation of vacancy-related centers in CdS and ZnS buffers, rendering them less effective interfacial hole traps and recombination centers.

  13. Clarifying the controversy of the Tg depression in polystyrene thin films

    E-Print Network [OSTI]

    V. M. Boucher; D. Cangialosi; A. Alegría; J. Colmenero

    2011-08-01T23:59:59.000Z

    The glass transition temperature ($T_g$) of polymer thin films has been a subject of controversy in the last two decades. (Pseudo)thermodynamic determinations of $T_g$ generally suggest a significant depression, whereas the molecular mobility is found to be unchanged. The present study clarifies this apparent controversy by assuming that the $T_g$ in thin films is determined not only by the molecular mobility but also by the thickness of the film. This hypothesis is supported by the analysis of literature results on polystyrene thin films showing that the $T_g$ dependence on the cooling rate obtained on samples with different thicknesses can be rescaled onto a master curve. The thickness dependence of $T_g$ is quantitatively captured by an equilibration mechanism based on free volume holes diffusion. This dependence emerges from the ability of thinner films to maintain equilibrium, due to the shorter distance free volume holes have to diffuse to the polymer interface, the molecular motion determining the diffusion coefficient being thickness independent.

  14. Laser Induced Breakdown Spectroscopy and Applications Toward Thin Film Analysis

    E-Print Network [OSTI]

    Owens, Travis Nathan

    2011-01-01T23:59:59.000Z

    on the surface. Ultrafast laser pulses are shorter than thethe advantages of ultrafast laser pulses for thin film LIBS,each time. While ultrafast laser pulses are effective in

  15. Modeling of thin-film solar thermoelectric generators

    E-Print Network [OSTI]

    Weinstein, Lee Adragon

    Recent advances in solar thermoelectric generator (STEG) performance have raised their prospect as a potential technology to convert solar energy into electricity. This paper presents an analysis of thin-film STEGs. ...

  16. Scanned pulsed laser annealing of Cu thin films

    E-Print Network [OSTI]

    Verma, Harsh Anand, 1980-

    2005-01-01T23:59:59.000Z

    As the microelectronics industry has moved to Cu as the conductor material, there has been much research into microstructure control in Cu thin films, primarily because grain sizes affect resistivity. Also with Cu-based ...

  17. Direct printing of lead zirconate titanate thin films

    E-Print Network [OSTI]

    Bathurst, Stephen, 1980-

    2008-01-01T23:59:59.000Z

    Thus far, use of lead zirconate titanate (PZT) in MEMS has been limited due to the lack of process compatibility with existing MEMS manufacturing techniques. Direct printing of thin films eliminates the need for photolithographic ...

  18. Chemical vapor deposition of organosilicon and sacrificial polymer thin films

    E-Print Network [OSTI]

    Casserly, Thomas Bryan

    2005-01-01T23:59:59.000Z

    Chemical vapor deposition (CVD) produced films for a wide array of applications from a variety of organosilicon and organic precursors. The structure and properties of thin films were controlled by varying processing ...

  19. Structure of Molecular Thin Films for Organic Electronics | Stanford...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Organic Electronics Friday, April 6, 2012 - 1:00pm SSRL Conference Room 137-322 Bert Nickel, Physics Faculty and CeNS, Ludwig-Maximilians-University, Mnchen Thin films made out...

  20. The macroscopic delamination of thin films from elastic substrates

    E-Print Network [OSTI]

    Reis, Pedro Miguel

    The wrinkling and delamination of stiff thin films adhered to a polymer substrate have important applications in “flexible electronics.” The resulting periodic structures, when used for circuitry, have remarkable mechanical ...

  1. Flexible, transparent thin film transistors raise hopes for flexible...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the thin-film transistor, fabricated using single-atom-thick layers of graphene and tungsten diselenide, among other materials. The white scale bar shows 5 microns, which is...

  2. Steering and Separating Excitons in Organic Thin Films and Devices...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Steering and Separating Excitons in Organic Thin Films and Devices October 26, 2010 at 3pm36-428 Mark Thompson University of Southern California (USC) thompson abstract: We have...

  3. Structural, magnetic, and optical properties of orthoferrite thin films

    E-Print Network [OSTI]

    Supplee, William Wagner

    2007-01-01T23:59:59.000Z

    Pulsed laser deposition was used to create thin films of Ce-Fe-O and Y-Fe-O systems. Deposition temperature and ambient oxygen pressure were varied systematically between samples to determine which deposition conditions ...

  4. Guided Self-Assembly of Gold Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of...

  5. Orientational Analysis of Molecules in Thin Films | Stanford...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Orientational Analysis of Molecules in Thin Films Monday, September 17, 2012 - 10:00am SSRL Bldg. 137, room 226 Daniel Kaefer The synchrotron-based X-ray absorption spectroscopy is...

  6. Antimony-Doped Tin(II) Sulfide Thin Films

    E-Print Network [OSTI]

    Chakraborty, Rupak

    Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin ...

  7. Method for making surfactant-templated thin films

    DOE Patents [OSTI]

    Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (New Orleans, LA); Fan, Hong You (Albuquerque, NM)

    2010-08-31T23:59:59.000Z

    An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  8. Method for making surfactant-templated thin films

    DOE Patents [OSTI]

    Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

    2002-01-01T23:59:59.000Z

    An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  9. Homogenization studies for optical sensors based on sculptured thin films 

    E-Print Network [OSTI]

    Jamaian, Siti Suhana

    2013-07-01T23:59:59.000Z

    In this thesis we investigate theoretically various types of sculptured thin film (STF) envisioned as platforms for optical sensing. A STF consists of an array of parallel nanowires which can be grown on a substrate using ...

  10. Multimonth controlled small molecule release from biodegradable thin films

    E-Print Network [OSTI]

    Hammond, Paula T.

    Long-term, localized delivery of small molecules from a biodegradable thin film is challenging owing to their low molecular weight and poor charge density. Accomplishing highly extended controlled release can facilitate ...

  11. amorphous thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Amorphous Silicon Thin-Film Transistor Pixel.S.A. 1 LG Philips LCD Research and Development Center, An-Yang, 431-080, Korea (Received July 23, 2006; accepted October 31, 2006;...

  12. amorphous thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Amorphous Silicon Thin-Film Transistor Pixel.S.A. 1 LG Philips LCD Research and Development Center, An-Yang, 431-080, Korea (Received July 23, 2006; accepted October 31, 2006;...

  13. Initiated chemical vapor deposition of functional polyacrylic thin films

    E-Print Network [OSTI]

    Mao, Yu, 1975-

    2005-01-01T23:59:59.000Z

    Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

  14. Functionalized multilayer thin films for protection against acutely toxic agents

    E-Print Network [OSTI]

    Krogman, Kevin Christopher

    2009-01-01T23:59:59.000Z

    The recently developed practice of spraying polyelectrolyte solutions onto a substrate in order to construct thin films via the Layer-by-Layer (LbL) technique has been further investigated and extended. In this process a ...

  15. al thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    dalek@eee.hku.hk , C. Y. Kwong, T. W. Lau, L. S. M. Lam, and W. K 276 DEFECT-FREE THIN FILM MEMBRANES FOR H2 SEPARATION AND ISOLATION Energy Storage, Conversion and...

  16. al thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    dalek@eee.hku.hk , C. Y. Kwong, T. W. Lau, L. S. M. Lam, and W. K 276 DEFECT-FREE THIN FILM MEMBRANES FOR H2 SEPARATION AND ISOLATION Energy Storage, Conversion and...

  17. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-06-01T23:59:59.000Z

    This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

  18. TiNi-based thin films for MEMS applications

    E-Print Network [OSTI]

    Fu, Yongqing

    In this paper, some critical issues and problems in the development of TiNi thin films were discussed, including preparation and characterization considerations, residual stress and adhesion, frequency improvement, fatigue ...

  19. Enabling integration of vapor-deposited polymer thin films

    E-Print Network [OSTI]

    Petruczok, Christy D. (Christy Danielle)

    2014-01-01T23:59:59.000Z

    Initiated Chemical Vapor Deposition (iCVD) is a versatile, one-step process for synthesizing conformal and functional polymer thin films on a variety of substrates. This thesis emphasizes the development of tools to further ...

  20. Efficient light trapping structure in thin film silicon solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

  1. ag thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MgO, Ref. 21 Marcon, Marco 2 Multi-level surface enhanced Raman scattering using AgOx thin film Physics Websites Summary: by applying laser-direct writing (LDW) technique on...

  2. Self-Assembling Process for Fabricating Tailored Thin Films

    ScienceCinema (OSTI)

    None

    2010-01-08T23:59:59.000Z

    A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

  3. Self-Assembling Process for Fabricating Tailored Thin Films

    ScienceCinema (OSTI)

    Sandia

    2009-09-01T23:59:59.000Z

    A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

  4. Nonlinear viscoelastic characterization of thin films using dynamic mechanical analysis

    E-Print Network [OSTI]

    Payne, Debbie Flowers

    1993-01-01T23:59:59.000Z

    NONLINEAR VISCOELASTIC CHARACTERIZATION OF THIN FILMS USING DYNAMIC MECHANICAL ANALYSIS A Thesis by DEBBIE FLOWERS PAYNE Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements... for the degree of MASTER OF SCIENCE AUGUST 1993 Major Subject: Aerospace Engineering NONLINEAR VISCOELASTIC CHARACTERIZATION OF THIN FILMS USING DYNAMIC MECHANICAL ANALYSIS A Thesis by DEBBIE FLOWERS PAYNE Approved as to style and content by: Thomas W...

  5. Recent technological advances in thin film solar cells

    SciTech Connect (OSTI)

    Ullal, H.S.; Zwelbel, K.; Surek, T.

    1990-03-01T23:59:59.000Z

    High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

  6. Evaporation system and method for gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, J.J.; Halpern, B.L.

    1994-10-18T23:59:59.000Z

    A method and apparatus are disclosed for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases. 8 figs.

  7. Enhanced electrochromic property of nickel hydroxide thin films prepared by anodic deposition

    SciTech Connect (OSTI)

    Chigane, Masaya; Ishikawa, Masami (Osaka Municipal Technical Research Inst. (Japan). Dept. of Inorganic Chemistry)

    1994-12-01T23:59:59.000Z

    Nickel hydroxide and nickel oxide thin films have received much attention as electrochromic (EC) materials, particularly as the materials for a complementary counterlayer against an EC tungsten oxide layer in smart window systems. Nickel hydroxide thin films were prepared onto transparent conductive tin oxide (NESA) substrates by potentiostatic electrolysis of a nickel amine complex solution at various potentials (0.6 to 1.5 V vs. Ag/AgCl). Nickel hydroxide thin film (F0.7) obtained at relatively lower anodic potential (0.7 V) showed enhanced electrochromism between colorless and dark brown in a sodium borate buffer solution at pH 12; the absorption spectrum in the colored (oxidized) state was broadened in the visible and near-infrared region compared with the nickel hydroxide films prepared at the higher anodic potential (1.1 V). characterization of the films revealed that crystal structure of F0.7 is assigned to [alpha]-Ni(OH)[sub 2], and that its electrochromism is based on the reversible oxidation to hexagonal [gamma][sub 2]-2NiO[sub 2] [center dot] NiOOH structure. Composite nickel hydroxide film, i.e., by the electrolytic deposition at 1.1 V followed by that at 0.7 V, showed electrochromic property similar to F0.7 and its durability in repeated redox cycles were much improved in comparison with that of F0.7. Electrochromic properties in switching performance of this composite nickel hydroxide film were investigated.

  8. Chemical dynamics and bonding at gas/semiconductor and oxide/semiconductor interfaces

    E-Print Network [OSTI]

    Bishop, Sarah R.

    2010-01-01T23:59:59.000Z

    applied to alternative semiconductor materials to determinephase oxides and semiconductor surfaces. Both experimentalunderstanding of the oxide/semiconductor interface. The

  9. Picoseconds-Laser Modification of Thin Films

    SciTech Connect (OSTI)

    Gakovic, Biljana; Trtica, Milan [Institute of Nuclear Sciences 'VINCA' 522, 11001 Belgrade (Serbia and Montenegro); Batani, Dimitri; Desai, Tara; Redaelli, Renato [Dipartimento di Fisica 'G. Occhialini', Universita' degli Studi Milano-Bicocca, Piazza della Scienza 3, Milan 20126 (Italy)

    2006-04-07T23:59:59.000Z

    The interaction of a Nd:YAG laser, pulse duration of 40 ps, with a titanium nitride (TiN) and tungsten-titanium (W-Ti) thin films deposited at silicon was studied. The peak intensity on targets was up to 1012 W/cm2. Results have shown that the TiN surface was modified, by the laser beam, with energy density of {>=}0.18 J/cm2 ({lambda}laser= 532 nm) as well as of 30.0 J/cm2 ({lambda}laser= 1064 nm). The W-Ti was surface modified with energy density of 5.0 J/cm2 ({lambda}laser= 532 nm). The energy absorbed from the Nd:YAG laser beam is partially converted to thermal energy, which generates a series of effects such as melting, vaporization of molten materials, dissociation and ionization of the vaporized material, appearance of plasma, etc. The following morphological changes of both targets were observed: (i) The appearance of periodic microstructures, in the central zone of the irradiated area, for laser irradiation at 532 nm. Accumulation of great number of laser pulses caused film ablation and silicon modification. (ii) Hole formation on the titanium nitride/silicon target was registered at 1064 nm. The process of the Nd:YAG laser interaction with both targets was accompanied by plasma formation above the target.

  10. Controlled nanostructuration of polycrystalline tungsten thin films

    SciTech Connect (OSTI)

    Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l'Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d'Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

    2013-05-07T23:59:59.000Z

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  11. Vertically aligned biaxially textured molybdenum thin films

    SciTech Connect (OSTI)

    Krishnan, Rahul [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Riley, Michael [Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lee, Sabrina [US Army Armament Research, Development and Engineering Center, Benet Labs, Watervliet, New York 12189 (United States); Lu, Toh-Ming [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2011-09-15T23:59:59.000Z

    Vertically aligned, biaxially textured molybdenum nanorods were deposited using dc magnetron sputtering with glancing flux incidence (alpha = 85 degrees with respect to the substrate normal) and a two-step substrate-rotation mode. These nanorods were identified with a body-centered cubic crystal structure. The formation of a vertically aligned biaxial texture with a [110] out-of-plane orientation was combined with a [-110] in-plane orientation. The kinetics of the growth process was found to be highly sensitive to an optimum rest time of 35 seconds for the two-step substrate rotation mode. At all other rest times, the nanorods possessed two separate biaxial textures each tilted toward one flux direction. While the in-plane texture for the vertical nanorods maintains maximum flux capture area, inclined Mo nanorods deposited at alpha = 85 degrees without substrate rotation display a [-1-1-4] in-plane texture that does not comply with the maximum flux capture area argument. Finally, an in situ capping film was deposited with normal flux incidence over the biaxially textured vertical nanorods resulting in a thin film over the porous nanorods. This capping film possessed the same biaxial texture as the nanorods and could serve as an effective substrate for the epitaxial growth of other functional materials.

  12. High-efficiency micro-energy generation based on free-carrier-modulated ZnO:N piezoelectric thin films

    SciTech Connect (OSTI)

    Lee, Eunju; Park, Jaedon; Yim, Munhyuk; Jeong, Sangbeom; Yoon, Giwan, E-mail: gwyoon@kaist.ac.kr [Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

    2014-05-26T23:59:59.000Z

    The free-carrier-modulated ZnO:N thin film-based flexible nanogenerators (NZTF-FNGs) are proposed and experimentally demonstrated. The suggested flexible nanogenerators (FNGs) are fabricated using N-doped ZnO thin films (NZTFs) as their piezoelectric active elements, which are deposited by a radio frequency magnetron sputtering technique with an N{sub 2}O reactive gas as an in situ dopant source. Considerable numbers of N atoms are uniformly incorporated into NZTFs overall during their growth, which would enable them to significantly compensate the unintentional background free electron carriers both in the bulk and at the surface of ZnO thin films (ZTFs). This N-doping approach is found to remarkably enhance the performance of NZTF-FNGs, which shows output voltages that are almost two orders of magnitude higher than those of the conventionally grown ZnO thin film-based FNGs. This is believed to be a result of both substantial screening effect suppression in the ZTF bulk and more reliable Schottky barrier formation at the ZTF interfaces, which is all mainly caused by the N-compensatory doping process. Furthermore, the NZTF-FNGs fabricated are verified via charging tests to be suitable for micro-energy harvesting devices.

  13. Singular Limits for Thin Film Superconductors in Strong Magnetic Fields - Maan Field Model for Thin Films

    E-Print Network [OSTI]

    Stan Alama; Lia Bronsard; Bernardo Galvão-Sousa

    2012-09-17T23:59:59.000Z

    We consider singular limits of the three-dimensional Ginzburg-Landau functional for a superconductor with thin-film geometry, in a constant external magnetic field. The superconducting domain has characteristic thickness on the scale $\\eps>0$, and we consider the simultaneous limit as the thickness $\\eps\\rightarrow 0$ and the Ginzburg-Landau parameter $\\kappa\\rightarrow\\infty$. We assume that the applied field is strong (on the order of $\\eps^{-1}$ in magnitude) in its components tangential to the film domain, and of order $\\log\\kappa$ in its dependence on $\\kappa$. We prove that the Ginzburg-Landau energy $\\Gamma$-converges to an energy associated with a two-obstacle problem, posed on the planar domain which supports the thin film. The same limit is obtained regardless of the relationship between $\\eps$ and $\\kappa$ in the limit. Two illustrative examples are presented, each of which demonstrating how the curvature of the film can induce the presence of both (positively oriented) vortices and (negatively oriented) antivortices coexisting in a global minimizer of the energy.

  14. In situ self-assembled organic interface layers for the controlled growth of oligothiophene thin films on ferroelectric Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}

    SciTech Connect (OSTI)

    Milde, P., E-mail: Peter.Milde@iapp.de; Zerweck-Trogisch, U.; Eng, L. M. [Institute of Applied Photophysics, Technische Universität Dresden, D-01062 Dresden (Germany)] [Institute of Applied Photophysics, Technische Universität Dresden, D-01062 Dresden (Germany); Schönfelder, R.; Koitzsch, A. [Institute for Solid State Research, IFW-Dresden, P.O. Box 270116, DE-01171 Dresden (Germany)] [Institute for Solid State Research, IFW-Dresden, P.O. Box 270116, DE-01171 Dresden (Germany); Haubner, K.; Jaehne, E. [Institute of Macromolecular Chemistry and Textile Chemistry, Technische Universität Dresden, D-01062 Dresden (Germany)] [Institute of Macromolecular Chemistry and Textile Chemistry, Technische Universität Dresden, D-01062 Dresden (Germany)

    2013-12-07T23:59:59.000Z

    We introduce an in situ vacuum procedure for the optimal preparation and analysis of self-assembled monolayers (SAMs) as used in organic molecular electronics on ferroelectric lead zirconate titanate (PZT) substrates. Excellent ordering of oligothiophene semiconductor layers is heavily promoted through the presence of an interfacial bi-functional SAM layer that binds to both the oxidic PZT surface and the organic semiconductor molecules. The described method can be extended to other material combinations, featuring a variety of substrate materials and molecular functionalities.

  15. Buried anode lithium thin film battery and process for forming the same

    DOE Patents [OSTI]

    Lee, Se-Hee; Tracy, C. Edwin; Liu, Ping

    2004-10-19T23:59:59.000Z

    A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

  16. Physical properties of erbium implanted tungsten oxide films deposited by reactive dual magnetron sputtering

    E-Print Network [OSTI]

    Mohamed, Sodky H.; Anders, Andre

    2006-01-01T23:59:59.000Z

    of erbium implanted tungsten oxide films deposited byDual magnetron sputtering; tungsten oxide films; Er ionoptical waveguides [3,5]. Tungsten oxide (WO 3 ) thin films

  17. Thin Film Packaging Solutions for High Efficiency OLED Lighting Products

    SciTech Connect (OSTI)

    None

    2008-06-30T23:59:59.000Z

    The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology was characterized as having less than 10% change in transmission during the 15,000 hour test period; (3) demonstrated thin film encapsulation of a phosphorescent OLED device with 1,500 hours of lifetime at 60 C and 80% RH; (4) demonstrated that a thin film laminate encapsulation, in addition to the direct thin film deposition process, of a polymer OLED device was another feasible packaging strategy for OLED lighting. The thin film laminate strategy was developed to mitigate defects, demonstrate roll-to-roll process capability for high volume throughput (reduce costs) and to support a potential commercial pathway that is less dependent upon integrated manufacturing since the laminate could be sold as a rolled good; (5) demonstrated that low cost 'blue' glass substrates could be coated with a siloxane barrier layer for planarization and ion-protection and used in the fabrication of a polymer OLED lighting device. This study further demonstrated that the substrate cost has potential for huge cost reductions from the white borosilicate glass substrate currently used by the OLED lighting industry; (6) delivered four-square feet of white phosphorescent OLED technology, including novel high efficiency devices with 82 CRI, greater than 50 lm/W efficiency, and more than 1,000 hours lifetime in a product concept model shelf; (7) presented and or published more than twenty internal studies (for private use), three external presentations (OLED workshop-for public use), and five technology-related external presentations (industry conferences-for public use); and (8) issued five patent applications, which are in various maturity stages at time of publication. Delivery of thin film encapsulated white phosphorescent OLED lighting technology remains a challenging technical achievement, and it seems that commercial availability of thin, bright, white OLED light that meets market requirements will continue to require research and development effort. However, there will be glass encapsulated white OLED lighting products commercialized in niche markets during the 2008 calendar year. This commercializ

  18. Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

    SciTech Connect (OSTI)

    Ruffner, J.A.; Clem, P.G.; Tuttle, B.A. [and others

    1998-01-01T23:59:59.000Z

    Uncooled pyroelectric IR imaging systems, such as night vision goggles, offer important strategic advantages in battlefield scenarios and reconnaissance surveys. Until now, the current technology for fabricating these devices has been limited by low throughput and high cost which ultimately limit the availability of these sensor devices. We have developed and fabricated an alternative design for pyroelectric IR imaging sensors that utilizes a multilayered thin film deposition scheme to create a monolithic thin film imaging element on an active silicon substrate for the first time. This approach combines a thin film pyroelectric imaging element with a thermally insulating SiO{sub 2} aerogel thin film to produce a new type of uncooled IR sensor that offers significantly higher thermal, spatial, and temporal resolutions at a substantially lower cost per unit. This report describes the deposition, characterization and optimization of the aerogel thermal isolation layer and an appropriate pyroelectric imaging element. It also describes the overall integration of these components along with the appropriate planarization, etch stop, adhesion, electrode, and blacking agent thin film layers into a monolithic structure. 19 refs., 8 figs., 6 tabs.

  19. Surface plasmon coupled emission studies on engineered thin film hybrids of nano ??Al{sub 2}O{sub 3} on silver

    SciTech Connect (OSTI)

    Mulpur, Pradyumna; Chunduri, Avinash; Rattan, Tanu Mimani; Kamisetti, Venkataramaniah [Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthi Nilayam, Andhra Pradesh, India 515134 (India); Lingam, Kiran; Rao, Apparao M. [Department of Physics and Astronomy, 202C Kinard Laboratory, Clemson University, Clemson, SC 29634 (United States)

    2014-01-28T23:59:59.000Z

    We report the first time engineering and fabrication of a novel thin film hybrid of nano ?-alumina doped in a polyvinyl alcohol (PVA) matrix along with rhodamine b (Rh.B) on a silver thin film. Silver films of 50 nm thickness on glass slides were fabricated by thermal evaporation. Nano ?-alumina was synthesized through the combustion route and characterized by XRD. The ?-alumina was dispersed in the PVA-Rh.B matrix by tip sonication. The resultant solution was spin coated on the Ag thin film at 3000 rpm to generate an overcoat of ?30 nm. We have designed and constructed an opto-mechanical setup for performing the SPCE studies. Excitation with a 532 nm continuous laser, led to the coupling of the energy of Rh.B emission to the surface plasmon modes of silver. The emission @ 580 nm was recorded using an Ocean Optics(copyright, serif) fiber optic spectrometer. Calculation of the ratio of signal intensity between the directional SPCE and isotropic fluorescence gives us the factor of signal enhancements which SPCE offers. We report an '8 fold' signal enhancement attributed to SPCE arising from the metal oxide doped thin film hybrid. We observed only a '5 fold' signal enhancement in the case of a thin film hybrid without ?-alumina. The emission was also 92% P-polarized which is in coherence with the theory of SPCE. The greater degree of signal enhancement observed in the ?-alumina doped thin film substrate can be attributed to the surface roughness which alumina offers to silver, which along with the porous nature of alumina enables a greater degree of adsorption of Rh.B which results in a higher emission intensity. Computational modeling was also performed, based on surface plasmon resonance (SPR) calculations to provide theoretical background to observed experimental data. The ?-alumina thin film hybrid can be extended as an economical sensing platform towards the high sensitive detection of analytes.

  20. Polycrystalline thin-film solar cells and modules

    SciTech Connect (OSTI)

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01T23:59:59.000Z

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  1. Polycrystalline thin-film solar cells and modules

    SciTech Connect (OSTI)

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01T23:59:59.000Z

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  2. Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

    DOE Patents [OSTI]

    Miller, Joel S. (Salt Lake City, UT); Pokhodnya, Kostyantyn I. (Salt Lake City, UT)

    2003-12-09T23:59:59.000Z

    A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

  3. Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications

    SciTech Connect (OSTI)

    An, Ho-Myoung; Kim, Hee-Dong; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

    2013-12-15T23:59:59.000Z

    Graphical abstract: The degradation tendency extracted by CP technique was almost the same in both the bulk-type and TFT-type cells. - Highlights: • D{sub it} is directly investigated from bulk-type and TFT-type CTF memory. • Charge pumping technique was employed to analyze the D{sub it} information. • To apply the CP technique to monitor the reliability of the 3D NAND flash. - Abstract: The energy distribution and density of interface traps (D{sub it}) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 10{sup 12} cm{sup ?2} eV{sup ?1} to 3.66 × 10{sup 13} cm{sup ?2} eV{sup ?1} due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for D{sub it} of the TFT-type cells was similar to those of bulk-type cells.

  4. Laser processing of polymer nanocomposite thin films A. T. Sellinger, E. M. Leveugle, K. Gogick, L. V. Zhigilei, and J. M. Fitz-Geralda

    E-Print Network [OSTI]

    Zhigilei, Leonid V.

    that nanocomposite thin films tend to exhibit.6­12 Poly- mer thin films infused with carbon nanotubes CNTs often

  5. Carrier Dynamics in a-Fe2O3 (0001) Thin Films and Single Crystals...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Carrier Dynamics in a-Fe2O3 (0001) Thin Films and Single Crystals Probed by Femtosecond Transient Absorption and Reflectivity. Carrier Dynamics in a-Fe2O3 (0001) Thin Films and...

  6. ZnS Thin Films Deposited by a Spin Successive Ionic Layer Adsorption...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ZnS Thin Films Deposited by a Spin Successive Ionic Layer Adsorption and Reaction Process. ZnS Thin Films Deposited by a Spin Successive Ionic Layer Adsorption and Reaction...

  7. Adsorption of iso-/n-butane on an Anatase Thin Film: A Molecular...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    iso-n-butane on an Anatase Thin Film: A Molecular Beam Scattering and TDS Study. Adsorption of iso-n-butane on an Anatase Thin Film: A Molecular Beam Scattering and TDS Study....

  8. Two-color Laser Desorption of Nanostructured MgO Thin Films....

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Two-color Laser Desorption of Nanostructured MgO Thin Films. Two-color Laser Desorption of Nanostructured MgO Thin Films. Abstract: Neutral magnesium atom emission from...

  9. Epoxy/Single Walled Carbon Nanotube Nanocomposite Thin Films for Composites Reinforcement

    E-Print Network [OSTI]

    Warren, Graham

    2010-07-14T23:59:59.000Z

    This work is mainly focused upon the preparation, processing and evaluation of mechanical and material properties of epoxy/single walled carbon nanotube (SWCNT) nanocomposite thin films. B-staged epoxy/SWCNT nanocomposite thin films at 50% of cure...

  10. Characterization of LiNi?.?Mn?.?O? Thin Film Cathode Prepared by Pulsed Laser Deposition

    E-Print Network [OSTI]

    Xia, Hui

    LiNi?.?Mn?.?O? thin films have been grown by pulsed laser deposition (PLD) on stainless steel (SS) substrates. The crystallinity and structure of thin films were investigated by X-ray diffraction (XRD). Microstructure and ...

  11. Generation of low work function, stable compound thin films by laser ablation

    DOE Patents [OSTI]

    Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

    2001-01-01T23:59:59.000Z

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  12. Study of Martensitic Phase transformation in a NiTiCu Thin Film...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Martensitic Phase transformation in a NiTiCu Thin Film Shape Memory Alloy Using Photoelectron Emission Microscopy. Study of Martensitic Phase transformation in a NiTiCu Thin Film...

  13. The development of a thin-film rollforming process for pharmaceutical continuous manufacturing

    E-Print Network [OSTI]

    Slaughter, Ryan (Ryan R.)

    2013-01-01T23:59:59.000Z

    In this thesis, a continuous rollforming process for the folding of thin-films was proposed and studied as a key step in the continuous manufacturing of pharmaceutical tablets. HPMC and PEG based polymeric thin-films were ...

  14. Layer-by-Layer Assembly of Clay-filled Polymer Nanocomposite Thin Films

    E-Print Network [OSTI]

    Jang, Woo-Sik

    2010-01-14T23:59:59.000Z

    robotic dipping system, for the preparation of these thin films, was built. The robot alternately dips a substrate into aqueous mixtures with rinsing and drying in between. Thin films of sodium montmorillonite clay and cationic polymer were grown...

  15. Influence of samaria doping on the resistance of ceria thin films...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    doping on the resistance of ceria thin films and its implications to the planar oxygen sensing devices. Influence of samaria doping on the resistance of ceria thin films and...

  16. On the room-temperature ferromagnetism of Zn1-xCrxO thin films...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    On the room-temperature ferromagnetism of Zn1-xCrxO thin films deposited by reactive co-sputtering. On the room-temperature ferromagnetism of Zn1-xCrxO thin films deposited by...

  17. Initiated chemical vapor deposition of polymeric thin films : mechanism and applications

    E-Print Network [OSTI]

    Chan, Kelvin, Ph. D. Massachusetts Institute of Technology

    2005-01-01T23:59:59.000Z

    Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness ...

  18. High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing

    E-Print Network [OSTI]

    Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

    2008-01-01T23:59:59.000Z

    One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

  19. Fabrication of polycrystalline thin films by pulsed laser processing

    DOE Patents [OSTI]

    Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

    1998-02-03T23:59:59.000Z

    A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

  20. Method of improving field emission characteristics of diamond thin films

    DOE Patents [OSTI]

    Krauss, A.R.; Gruen, D.M.

    1999-05-11T23:59:59.000Z

    A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.

  1. Fabrication of polycrystalline thin films by pulsed laser processing

    DOE Patents [OSTI]

    Mitlitsky, Fred (Livermore, CA); Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Colella, Nicholas J. (Livermore, CA)

    1998-02-03T23:59:59.000Z

    A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

  2. Far From Threshold Buckling Analysis of Thin Films

    E-Print Network [OSTI]

    Benny Davidovitch; Robert D. Schroll; Dominic Vella; Mokhtar Adda-Bedia; Enrique Cerda

    2010-08-17T23:59:59.000Z

    Thin films buckle easily and form wrinkled states in regions of well defined size. The extent of a wrinkled region is typically assumed to reflect the zone of in-plane compressive stresses prior to buckling, but recent experiments on ultrathin sheets have shown that wrinkling patterns are significantly longer and follow different scaling laws than those predicted by standard buckling theory. Here we focus on a simple setup to show the striking differences between near-threshold buckling and the analysis of wrinkle patterns in very thin films, which are typically far from threshold.

  3. Method of improving field emission characteristics of diamond thin films

    DOE Patents [OSTI]

    Krauss, Alan R. (Naperville, IL); Gruen, Dieter M. (Downer Grove, IL)

    1999-01-01T23:59:59.000Z

    A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

  4. Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell

    E-Print Network [OSTI]

    Li, Tong; Jiang, Chun

    2010-01-01T23:59:59.000Z

    We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

  5. A comparison of thick film and thin film traffic stripes

    E-Print Network [OSTI]

    Keese, Charles J

    1952-01-01T23:59:59.000Z

    Striys. . . Pigmented Bitusmn Stripes . Asphalt %uilt-Upa Striye vith Pigmented Portland Cement Mortar Cover Course 38 . ~ 41 Thin Film Stripes Used for Comparison Results of Comparing Thick Film Stripes and Thin Film Paint Stripes . ~ ~ ~ ~ ~ 43... was aspbaltio oonorets. The pavement in Test Areas 2y 3p and 4 vas portland cesmnh ooncrete, Two test areas (3 and 4) vere located in such manner as to provide uninterrupted flow of traffic over tbs entire length of the test area. The other two test areas (1...

  6. The origin of white luminescence from silicon oxycarbide thin films

    SciTech Connect (OSTI)

    Nikas, V.; Gallis, S., E-mail: sgalis@us.ibm.com; Huang, M.; Kaloyeros, A. E. [College of Nanoscale Sciences and Engineering, State University of New York, Albany, New York 12203 (United States); Nguyen, A. P. D.; Stesmans, A.; Afanas'ev, V. V. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium)

    2014-02-10T23:59:59.000Z

    Silicon oxycarbide (SiC{sub x}O{sub y}) is a promising material for achieving strong room-temperature white luminescence. The present work investigated the mechanisms for light emission in the visible/ultraviolet range (1.5–4.0?eV) from chemical vapor deposited amorphous SiC{sub x}O{sub y} thin films, using a combination of optical characterizations and electron paramagnetic resonance (EPR) measurements. Photoluminescence (PL) and EPR studies of samples, with and without post-deposition passivation in an oxygen and forming gas (H{sub 2} 5 at.?% and N{sub 2} 95 at.?%) ambient, ruled out typical structural defects in oxides, e.g., Si-related neutral oxygen vacancies or non-bridging oxygen hole centers, as the dominant mechanism for white luminescence from SiC{sub x}O{sub y}. The observed intense white luminescence (red, green, and blue emission) is believed to arise from the generation of photo-carriers by optical absorption through C-Si-O related electronic transitions, and the recombination of such carriers between bands and/or at band tail states. This assertion is based on the realization that the PL intensity dramatically increased at an excitation energy coinciding with the E{sub 04} band gaps of the material, as well as by the observed correlation between the Si-O-C bond density and the PL intensity. An additional mechanism for the existence of a blue component of the white emission is also discussed.

  7. Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells

    E-Print Network [OSTI]

    Fan, Shanhui

    Optical Society of America OCIS codes: (310.7005) Transparent conductive coatings; (310.6845) Thin film

  8. Synthesis and microstructural TEM investigation of CaCu{sub 3}Ru{sub 4}O{sub 12} ceramic and thin film

    SciTech Connect (OSTI)

    Brize, Virginie [Universite Francois Rabelais, LEMA, UMR 6157 CNRS-CEA, Parc de Grandmont, 37200 Tours (France); STMicroelectronics, 16 rue P and M Curie, 37001 Tours (France); Autret-Lambert, Cecile, E-mail: cecile.autret-lambert@univ-tours.fr [Universite Francois Rabelais, LEMA, UMR 6157 CNRS-CEA, Parc de Grandmont, 37200 Tours (France); Wolfman, Jerome; Gervais, Monique; Gervais, Francois [Universite Francois Rabelais, LEMA, UMR 6157 CNRS-CEA, Parc de Grandmont, 37200 Tours (France)

    2011-10-15T23:59:59.000Z

    CaCu{sub 3}Ru{sub 4}O{sub 12} (CCRO) is a conductive oxide having the same structure as CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) and close lattice parameters. The later compound is strongly considered for high density parallel plates capacitors application due to its so-called colossal dielectric constant. The need for an electrode inducing CCTO epitaxial growth with a clean and sharp interface is therefore necessary, and CCRO is a good potential candidate. In this paper, the synthesis of monophasic CCRO ceramic is reported, as well as pulsed laser deposition of CCRO thin film onto (001) NdCaAlO{sub 4} substrate. Structural and physical properties of bulk CCRO were studied by transmission electron microscopy and electron spin resonance. CCRO films and ceramic exhibited a metallic behavior down to low temperature. CCRO films were (001) oriented and promoted a CCTO film growth with the same orientation. - Graphical Abstract: Structure of CaCu{sub 3}Ru{sub 4}O{sub 12} showing the RuO{sub 6} octahedra and the square planar environment for Cu{sup 2+}. Highlights: > In this study, we investigate the structural properties and microstructure of ceramics CaCu{sub 3}Ru{sub 4}O{sub 12}. > We study the conduction properties of polycrystalline material. > Then we synthesize the conductive thin film which is deposited on a high K material with the same structure (CaCu{sub 3}Ti{sub 4}O{sub 12}).

  9. EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS

    E-Print Network [OSTI]

    Ceder, Gerbrand

    materials for thin film solar cells such as CdTe and CIGS suffer from concerns over resource scarcity (eEARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS Yun Seog Lee 1 conversion efficiencies should be increased. In terms of reducing module cost, thin film solar cells

  10. A Homogenized Free Energy Model for Hysteresis in Thin-film Shape Memory Alloys

    E-Print Network [OSTI]

    A Homogenized Free Energy Model for Hysteresis in Thin-film Shape Memory Alloys Jordan E. Massad1-8205 Abstract Thin-film shape memory alloys (SMAs) have become excellent candidates for mi- croactuator- lustrate aspects of the model through comparison with thin-film SMA superelastic and shape memory effect

  11. Barium ferrite thin film media with perpendicular c-axis orientation and small grain size

    E-Print Network [OSTI]

    Laughlin, David E.

    Barium ferrite thin film media with perpendicular c-axis orientation and small grain size Zailong, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 Barium ferrite thin films with perpendicular c conditions. The c-axis orientation of barium ferrite thin films is most sensitive to the oxygen partial

  12. Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b , Ounsi of an absorbing planar photonic crystal within a thin film photovoltaic cell. The devices are based on a stack with large areas. Keywords: Photonic crystal, Photovoltaic solar cell, Thin film solar cell, Hydrogenated

  13. Time-Resolved Magnetic Flux and AC-Current Distributions in Superconducting YBCO Thin Films and

    E-Print Network [OSTI]

    Shaw, Leah B.

    Time-Resolved Magnetic Flux and AC-Current Distributions in Superconducting YBCO Thin Films magnetic field. We study the interaction behavior of YBCO thin films in an ac transport current and a dc the calibrated field profiles. The current density evolution in YBCO thin films is studied by TRMOI as a function

  14. Hybrid spectral/finite element analysis of dynamic delamination of patterned thin films

    E-Print Network [OSTI]

    Sottos, Nancy R.

    Hybrid spectral/finite element analysis of dynamic delamination of patterned thin films Phuong Tran Accepted 10 March 2008 Available online 20 March 2008 Keywords: Thin film Adhesion Delamination Dynamic analysis is performed to investigate the dynamic edge delamination of patterned thin films from a substrate

  15. X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films

    E-Print Network [OSTI]

    X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films T. J. Richardsona@lbl.gov Abstract Mixed metal thin films containing magnesium and a first-row transition element exhibit very large of magnesium hydride. Keywords: A. hydrogen storage materials, thin films; C. EXAFS, NEXAFS, X-ray diffraction

  16. Influence of stoichiometry on the dielectric properties of sputtered strontium titanate thin films

    E-Print Network [OSTI]

    York, Robert A.

    Influence of stoichiometry on the dielectric properties of sputtered strontium titanate thin films.1063/1.1598274 INTRODUCTION SrTiO3 thin films have been widely studied for their high dielectric constants and potential temperature superconductors. The dielectric permittivity of SrTiO3 thin films is significantly smaller than

  17. Effects of stretching and cycling on the fatigue behavior of polymer-supported Ag thin films

    E-Print Network [OSTI]

    Effects of stretching and cycling on the fatigue behavior of polymer-supported Ag thin films Gi March 2013 Keywords: Fatigue Thin films Fatigue crack initiation Intergranular failure Ductile fracture on characterizing the mechanical behavior of thin metal films and have observed that metals in thin-film form can

  18. Effects of thickness on the piezoelectric and dielectric properties of lead zirconate titanate thin films

    E-Print Network [OSTI]

    Sottos, Nancy R.

    Lead zirconate titanate PZT thin films with a Zr/Ti ratio of 52/48 were deposited on platinized silicon. Both the piezoelectric properties and the dielectric constants of the PZT thin films were found thin films. The measured changes in properties with thickness were correlated with the residual stress

  19. THIN FILM EPITAXY WITH OR WITHOUT SLOPE SELECTION BO LI AND JIAN-GUO LIU

    E-Print Network [OSTI]

    Soatto, Stefano

    THIN FILM EPITAXY WITH OR WITHOUT SLOPE SELECTION BO LI AND JIAN-GUO LIU Abstract. Two nonlinear diffusion equations for thin film epitaxy, with or without slope se- lection, are studied in this work = - · h 1 + | h|2 + h (1.1) and th = - · 1 - | h|2 h + h (1.2) that model epitaxial growth of thin films

  20. Thin film ZT characterization using transient Harman technique Zhixi Bian, Yan Zhang, Holger Schmidt, Ali Shakouri

    E-Print Network [OSTI]

    Thin film ZT characterization using transient Harman technique Zhixi Bian, Yan Zhang, Holger Street, Santa Cruz, CA 95064 Email: ali@soe.ucsc.edu, phone: (831) 459-3821 Abstract Thin-film to the freedom of tailoring the electron and heat transport. The characterization of these thin films

  1. Mathematical Model of Charge and Density Distributions in Interfacial Polymerization of Thin Films

    E-Print Network [OSTI]

    Freger, Viatcheslav "Slava"

    Mathematical Model of Charge and Density Distributions in Interfacial Polymerization of Thin Films INTRODUCTION Interfacial polymerization (IP) as a method of prepa- ration of thin film composite (TFC- tion. It has been shown that the formation of a thin film occurs very quickly and often results

  2. REVIEW OF SCIENTIFIC INSTRUMENTS 82, 023908 (2011) Calorimetry of epitaxial thin films

    E-Print Network [OSTI]

    Hellman, Frances

    2011-01-01T23:59:59.000Z

    REVIEW OF SCIENTIFIC INSTRUMENTS 82, 023908 (2011) Calorimetry of epitaxial thin films David W 2011; accepted 22 January 2011; published online 24 February 2011) Thin film growth allows. Microcalorimetry and nanocalorimetry techniques exist for the measurements of thin films but rely on an amorphous

  3. Thin film microcalorimeter for heat capacity measurements from 1.5 to 800 K

    E-Print Network [OSTI]

    Hellman, Frances

    Thin film microcalorimeter for heat capacity measurements from 1.5 to 800 K , D. W. Denlinger, E. N for publication 13 January 1994) A new microcalorimeter for measuring heat capacity of thin films in the range 1 silicon nitride membrane as the sample substrate, a Pt thin film resistor for temperatures greater than 40

  4. Microtensile Testing of Free-standing and Supported Metallic Thin Films

    E-Print Network [OSTI]

    Microtensile Testing of Free-standing and Supported Metallic Thin Films A thesis presented by Denis Films Abstract Mechanical properties of free-standing and supported Cu thin films were investi- gated observed experimentally on thin films. As-deposited Cu films with different film thicknesses on compliant

  5. Thin-Film Solid-Phase Extraction To Measure Fugacities of Organic

    E-Print Network [OSTI]

    Gobas, Frank

    Thin-Film Solid-Phase Extraction To Measure Fugacities of Organic Chemicals with Low Volatility organic chemicals ranging in octanol-air partition coefficients from 105.6 to 109.2. Thin films feasibility, equilibration times, reproducibility, and property characteristics of the thin films

  6. Gas Sensing Mechanism in Chemiresistive Cobalt and Metal-Free Phthalocyanine Thin Films

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Gas Sensing Mechanism in Chemiresistive Cobalt and Metal-Free Phthalocyanine Thin Films Forest I-free phthalocyanine (H2- Pc) thin films were investigated with respect to analyte basicity. Chemiresistive sensors However, when Pc thin films are exposed to O2, the films become doped and the conductivity increases

  7. Sculptured thin films and glancing angle deposition: Growth mechanics and applications

    E-Print Network [OSTI]

    Robbie, Kevin

    Sculptured thin films and glancing angle deposition: Growth mechanics and applications K. Robbiea thin films with three dimensional microstructure controlled on the 10 nm scale were fabricated'' columnar thin film microstructure into desired forms ranging from zigzag shaped to helical to four

  8. Determination of refractive index, thickness, and the optical losses of thin films from

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Determination of refractive index, thickness, and the optical losses of thin films from prism­film.4760, 300.1030. 1. Introduction Transparent thin films find wide applications in optics: coating, sensors and optical losses. The optical losses of a thin film have three different origins: sur- face scattering due

  9. Microwave Planar Capacitors Employing Low Loss, High-K, and Tunable BZN Thin Films

    E-Print Network [OSTI]

    York, Robert A.

    Microwave Planar Capacitors Employing Low Loss, High-K, and Tunable BZN Thin Films Jaehoon Park) thin films deposited by RF magnetron sputtering. Device Q factors (QDUT) and capacitances (CDUT) were films can be the alternative to conventional BST thin films. Index Terms -- Dielectric properties

  10. Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films

    E-Print Network [OSTI]

    Tian, Weidong

    Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films Can observed in epitaxial multiferroic BiFeO3 BFO thin films. The forward direction of the rectifying current the switchable diode effect and the ferroelectric resistive switching in epitaxially BFO thin films. BFO thin

  11. Low-Loss, Tunable Microwave Capacitors Using Bismuth Zinc Niobate Thin Films

    E-Print Network [OSTI]

    York, Robert A.

    Low-Loss, Tunable Microwave Capacitors Using Bismuth Zinc Niobate Thin Films Jaehoon Park, Jiwei in the measured frequency range. The results show that BZN thin films have great potential for low loss, tunable microwave devices. Keyword: low loss, thin film, capacitors, dielectric properties, bismuth zinc niobate I

  12. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, III, Jerome J. (New Haven, CT); Halpern, Bret L. (Bethany, CT)

    1993-01-01T23:59:59.000Z

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

  13. Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications

    E-Print Network [OSTI]

    Zheludev, Nikolay

    Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications S: Available online 28 May 2012 Keywords: Remote plasma Atomic layer deposition (ALD) ZnO Thin film transistor of various reactant plasma parameters of remote plasma enhanced ALD (PEALD) on the ZnO thin film properties

  14. DETERMINING OPTICAL CONSTANTS OF URANIUM NITRIDE THIN FILMS IN THE EXTREME

    E-Print Network [OSTI]

    Hart, Gus

    DETERMINING OPTICAL CONSTANTS OF URANIUM NITRIDE THIN FILMS IN THE EXTREME ULTRAVIOLET (1.6-35 NM deposition and characterization of reactively-sputtered uranium nitride thin films. I also report optical.1 Application 1 1.2 Optical Constants 2 1.3 Project Focus 7 2 Uranium Nitride Thin Films 8 2.1 Sputtering 8 2

  15. DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS-FILM SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

  16. Metal-black scattering centers to enhance light harvesting by thin-film solar cells

    E-Print Network [OSTI]

    Peale, Robert E.

    Metal-black scattering centers to enhance light harvesting by thin-film solar cells Deep Panjwania as scattering centers to increase the effective optical thickness of thin-film solar cells. The particular type. Gold-black was deposited on commercial thin-film solar cells using a thermal evaporator in nitrogen

  17. Growth of GaN Thin Films on Silicon Using Single Source Precursors

    E-Print Network [OSTI]

    Boo, Jin-Hyo

    Growth of GaN Thin Films on Silicon Using Single Source Precursors and Development of New We have grown the GaN thin films on silicon substrates using the newly developed single source precursors by thermal MOCVD method. Highly oriented GaN thin films in the [002] direction with hexagonal

  18. Integrated thin film batteries on silicon

    E-Print Network [OSTI]

    Ariel, Nava

    2005-01-01T23:59:59.000Z

    Monolithic integration has been implemented successfully in complementary metal oxide semiconductor (CMOS) technology and led to improved device performance, increased reliability, and overall cost reduction. The next ...

  19. Crystalline Thin Films Formed by Supramolecular Assembly for

    E-Print Network [OSTI]

    Gao, Hongjun

    with crystalline materials.[9] In contrast with small-mole- cule materials, supramolecular materials, which combineCrystalline Thin Films Formed by Supramolecular Assembly for Ultrahigh-Density Data Storage in this digital age, there is an urgent need to develop new technologies and materials. In the past decade

  20. THE ELECTRICAL BEHAVIOR OF SUPERCONDUCTING THIN-FILM MICROBRIDGES

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    19 THE ELECTRICAL BEHAVIOR OF SUPERCONDUCTING THIN-FILM MICROBRIDGES SELF-HEATING below Tc their behavior is found to be dominated by the effects of self-heating. At low voltages near Tc. t Danforth Fellow. electrical behavior of these microbridges is largely dominated by the effects of self-heating

  1. Micromachined thin-film gas flow sensor for microchemical reactors

    E-Print Network [OSTI]

    Besser, Ronald S.

    Micromachined thin-film gas flow sensor for microchemical reactors W C Shin and R S Besser New applications not practical before such as highly compact, non-invasive pressure sensors, accelerometers and gas power consumption, fast response, and low-cost batch production [1-4]. Spurred by the development

  2. Atomic-scale Structural Characterizations of Functional Epitaxial Thin Films 

    E-Print Network [OSTI]

    Zhu, Yuanyuan

    2013-06-03T23:59:59.000Z

    by computer .......................................... 157 7.3.2. Thin films and TEM samples preparation ......................................... 158 7.3.3. Cs-corrected STEM and quantitative image processing .................... 159 7.4 Results... ......................................................................................................... 28 Figure 1.13. HR-STEM micrograph of Graphene (a) before83 and (b) after84 probe CS-correction. ............................................................................................ 29 Figure 2.1. Schematic diagram of the pulsed laser...

  3. Long-wave models of thin film fluid dynamics

    E-Print Network [OSTI]

    A. J. Roberts

    1994-11-04T23:59:59.000Z

    Centre manifold techniques are used to derive rationally a description of the dynamics of thin films of fluid. The derived model is based on the free-surface $\\eta(x,t)$ and the vertically averaged horizontal velocity $\\avu(x,t)$. The approach appears to converge well and has significant differences from conventional depth-averaged models.

  4. Nonlinear viscoelastic characterization of thin films using dynamic mechanical analysis 

    E-Print Network [OSTI]

    Payne, Debbie Flowers

    1993-01-01T23:59:59.000Z

    manner similar to the traditional time temperature superposition principle for linear viscoelastic materials where stress systematically compresses or expands the time scale. From dynamic mechanical testing and analysis, the experimental viscoelastic.... D. Nonlinear Characterization of Thin Film Materials. . . . Nonlinear Viscoelastic Models . Dynamic Mechanical Testing. Summary of Literature Reviewed. 5 5 7 8 III THEORETICAL ANALYSIS . A. B. C. D. Conversion of Experimental Values...

  5. NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES

    E-Print Network [OSTI]

    Suresh, Subra

    on the nano-indentation of polycrystalline Cu thin films, of three different thicknesses) Si substrates. The films were then vacuum-annealed at 475°C for 1 h. The resulting polycrystalline. A diamond Berkovich pyramid indentor with a tip radius, R 50 nm, was used. It is known from nano

  6. Thin Films and the Systems-Driven Approach

    SciTech Connect (OSTI)

    Zweibel, K.

    2005-01-01T23:59:59.000Z

    A systems-driven approach is used to discern tradeoffs between cost and efficiency improvements for various thin-film module technologies and designs. Prospects for reduced system cost via such strategies are enhanced as balance-of-systems costs decline, and some strategies are identified for greater research focus.

  7. Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices

    SciTech Connect (OSTI)

    Martin U. Pralle; James E. Carey

    2010-07-31T23:59:59.000Z

    SiOnyx has developed an enhanced thin film silicon photovoltaic device with improved efficiency. Thin film silicon solar cells suffer from low material absorption characteristics resulting in poor cell efficiencies. SiOnyx’s approach leverages Black Silicon, an advanced material fabricated using ultrafast lasers. The laser treated films show dramatic enhancement in optical absorption with measured values in excess of 90% in the visible spectrum and well over 50% in the near infrared spectrum. Thin film Black Silicon solar cells demonstrate 25% higher current generation with almost no impact on open circuit voltage as compared with representative control samples. The initial prototypes demonstrated an improvement of nearly 2 percentage points in the suns Voc efficiency measurement. In addition we validated the capability to scale this processing technology to the throughputs (< 5 min/m2) required for volume production using state of the art commercially available high power industrial lasers. With these results we clearly demonstrate feasibility for the enhancement of thin film solar cells with this laser processing technique.

  8. Thin film cracking and ratcheting caused by temperature cycling

    E-Print Network [OSTI]

    Suo, Zhigang

    Thin film cracking and ratcheting caused by temperature cycling M. Huang and Z. Suo Mechanical caused by ratcheting in an adjacent ductile layer. For example, on a silicon die directly attached corners. Aided by cycling temperature, the shear stresses cause ratcheting in the aluminum pads

  9. Fabrication and Characterization of Titanium-doped Hydroxyapatite Thin Films

    E-Print Network [OSTI]

    Desai, Amit Y

    . Thin films of titanium-doped hydroxyapatite (HA-Ti) have been deposited onto silicon substrates at three different compositions. With direct current (dc) power to the Ti target of 5, 10, and 15W films with compositions of 0.7, 1.7 and 2.0 at.% titanium...

  10. SAND2003-8146C Symposium on Thin Films

    E-Print Network [OSTI]

    Volinsky, Alex A.

    SAND2003-8146C Symposium on Thin Films ICM-9 9th International Conference on the Mechanical FRACTURE OF THIN GOLD FILMS N. R. Moody, D. P. Adams*, M. J. Cordill**, D. F. Bahr**, A. A. Volinsky of interfacial fracture energies of thin gold films as a function of film thickness is presented in this paper

  11. Perovskite phase thin films and method of making

    DOE Patents [OSTI]

    Boyle, Timothy J. (Albuquerque, NM); Rodriguez, Mark A. (Albuquerque, NM)

    2000-01-01T23:59:59.000Z

    The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

  12. INTERFACIAL STABILITY OF THIN FILM FIBER-OPTIC HYDROGEN SENSORS

    E-Print Network [OSTI]

    INTERFACIAL STABILITY OF THIN FILM FIBER-OPTIC HYDROGEN SENSORS R. Davis Smith, Ping Liu, Se and utility of these sensors, especially in the configuration that is based upon the optical response hydrogen sensors for use as safety monitors wherever hydrogen is used, stored, or produced. Prior work has

  13. Critical fields in ferromagnetic thin films: Identification of four regimes

    E-Print Network [OSTI]

    Otto, Felix

    Critical fields in ferromagnetic thin films: Identification of four regimes Rub´en Cantero­film elements is a paradigm for a multi­scale pattern­forming system. On one hand, there is a material length functional ceases to be positive definite. The degenerate subspace consists of the "unstable modes

  14. Method of preparing thin film polymeric gel electrolytes

    DOE Patents [OSTI]

    Derzon, Dora K. (Albuquerque, NM); Arnold, Jr., Charles (Albuquerque, NM)

    1997-01-01T23:59:59.000Z

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  15. Amorphous silicon thin film transistor as nonvolatile device. 

    E-Print Network [OSTI]

    Nominanda, Helinda

    2008-10-10T23:59:59.000Z

    n-channel and p-channel amorphous-silicon thin-film transistors (a-Si:H TFTs) with copper electrodes prepared by a novel plasma etching process have been fabricated and studied. Their characteristics are similar to those of TFTs with molybdenum...

  16. Method of preparing thin film polymeric gel electrolytes

    DOE Patents [OSTI]

    Derzon, D.K.; Arnold, C. Jr.

    1997-11-25T23:59:59.000Z

    Novel hybrid thin film electrolyte is described, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1}cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

  17. university-logo Numerical stability analysis for thin film flow

    E-Print Network [OSTI]

    Marzuola, Jeremy

    university-logo Numerical stability analysis for thin film flow: toward rigorous verification Blake Barker Indiana University October 2, 2013 B. Rigorous verification #12;university-logo Viscous roll waves (Picture courtesy Neil Balmforth, UBC.) B. Rigorous verification #12;university-logo Viscous roll waves 0 2

  18. Front and backside processed thin film electronic devices

    DOE Patents [OSTI]

    Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI); Yuan, Hao-Chih (Lakewood, CO); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI)

    2012-01-03T23:59:59.000Z

    This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  19. Band gap engineering at a semiconductor - crystalline oxide interface

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Moghadam, Jahangir-Moghadam; Shen, Xuan; Chrysler, Matthew; Ahmadi-Majlan, Kamyar; Su, Dong; Ngai, Joseph H.

    2015-03-01T23:59:59.000Z

    The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZrxTi1-xO? and Ge, in which the band gap of the former is enhanced with Zr content x. We presentmore »structural and electrical characterization of SrZrxTi1-xO?-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.« less

  20. Enhancement of Heat and Mass Transfer in Mechanically Contstrained Ultra Thin Films

    SciTech Connect (OSTI)

    Kevin Drost; Jim Liburdy; Brian Paul; Richard Peterson

    2005-01-01T23:59:59.000Z

    Oregon State University (OSU) and the Pacific Northwest National Laboratory (PNNL) were funded by the U.S. Department of Energy to conduct research focused on resolving the key technical issues that limited the deployment of efficient and extremely compact microtechnology based heat actuated absorption heat pumps and gas absorbers. Success in demonstrating these technologies will reduce the main barriers to the deployment of a technology that can significantly reduce energy consumption in the building, automotive and industrial sectors while providing a technology that can improve our ability to sequester CO{sub 2}. The proposed research cost $939,477. $539,477 of the proposed amount funded research conducted at OSU while the balance ($400,000) was used at PNNL. The project lasted 42 months and started in April 2001. Recent developments at the Pacific Northwest National Laboratory and Oregon State University suggest that the performance of absorption and desorption systems can be significantly enhanced by the use of an ultra-thin film gas/liquid contactor. This device employs microtechnology-based structures to mechanically constrain the gas/liquid interface. This technology can be used to form very thin liquid films with a film thickness less then 100 microns while still allowing gas/liquid contact. When the resistance to mass transfer in gas desorption and absorption is dominated by diffusion in the liquid phase the use of extremely thin films (<100 microns) for desorption and absorption can radically reduce the size of a gas desorber or absorber. The development of compact absorbers and desorbers enables the deployment of small heat-actuated absorption heat pumps for distributed space heating and cooling applications, heat-actuated automotive air conditioning, manportable cooling, gas absorption units for the chemical process industry and the development of high capacity CO{sub 2} absorption devices for CO{sub 2} collection and sequestration. The energy potential energy savings associated with these technologies is estimated to ultimately be 2.88 quads per year. It has become clear that commercial application of these technologies depends on a deeper understanding of the thermal phenomena encountered in a mechanically constrained ultra-thin film device. Our lack of understanding is currently limiting both the performance of these devices and the potential for further size reductions. Barriers to successful commercial applications of the mechanically-constrained ultra-thin film contactors include poorly understood single and two phase flow phenomena in the thin film, the need for improved micromachined contactors and a poor understanding of the phenomena effecting the dimensional stability of the thin film. The research included in this proposal is focused on research associated with resolving and removing these technical barriers to commercialization. The results of the research will significantly advance the prospects for the commercialization of the whole range to technologies that depend on improved gas/liquid contacting.

  1. Enhancement in figure-of-merit with superlattices structures for thin-film thermoelectric devices

    SciTech Connect (OSTI)

    Venkatasubramanian, R.; Colpitts, T.

    1997-07-01T23:59:59.000Z

    Thin-film superlattice (SL) structures in thermoelectric materials are shown to be a promising approach to obtaining an enhanced figure-of-merit, ZT, compared to conventional, state-of-the-art bulk alloyed materials. In this paper the authors describe experimental results on Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures, relevant to thermoelectric cooling and power conversion, respectively. The short-period Bi{sub 2}Te{sub 3} and Si/Ge SL structures appear to indicate reduced thermal conductivities compared to alloys of these materials. From the observed behavior of thermal conductivity values in the Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} SL structures, a distinction is made where certain types of periodic structures may correspond to an ordered alloy rather than an SL, and therefore, do not offer a significant reduction in thermal conductivity values. The study also indicates that SL structures, with little or weak quantum-confinement, also offer an improvement in thermoelectric power factor over conventional alloys. They present power factor and electrical transport data in the plane of the SL interfaces to provide preliminary support for the arguments on reduced alloy scattering and impurity scattering in Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures. These results, though tentative due to the possible role of the substrate and the developmental nature of the 3-{omega} method used to determine thermal conductivity values, suggest that the short-period SL structures potentially offer factorial improvements in the three-dimensional figure-of-merit (ZT3D) compared to current state-of-the-art bulk alloys. An approach to a thin-film thermoelectric device called a Bipolarity-Assembled, Series-Inter-Connected Thin-Film Thermoelectric Device (BASIC-TFTD) is introduced to take advantage of these thin-film SL structures.

  2. Polycrystalline thin-film technology: Recent progress in photovoltaics

    SciTech Connect (OSTI)

    Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

    1991-12-01T23:59:59.000Z

    Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe{sub 2}), cadmium telluride (CdTe), and thin-film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin-film CuInSe{sub 2}, has made some rapid advances in terms of high efficiency and long-term reliability. For CuInSe{sub 2} power modules, a world record has been reported on a 0.4-m{sup 2} module with an aperture-area efficiency of 10.4% and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe{sub 2} modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 cm{sup 2}. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10%; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

  3. Tailoring the coercivity in ferromagnetic ZnO thin films by 3d and 4f elements codoping

    SciTech Connect (OSTI)

    Lee, J. J.; Xing, G. Z., E-mail: guozhong.xing@unsw.edu.au; Yi, J. B.; Li, S. [School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052 (Australia)] [School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052 (Australia); Chen, T. [Department of Physics, The Chinese University of Hong Kong, Shatin (Hong Kong)] [Department of Physics, The Chinese University of Hong Kong, Shatin (Hong Kong); Ionescu, M. [Australian Nuclear Science and Technology Organization, Sydney, New South Wales 2234 (Australia)] [Australian Nuclear Science and Technology Organization, Sydney, New South Wales 2234 (Australia)

    2014-01-06T23:59:59.000Z

    Cluster free, Co (3d) and Eu (4f) doped ZnO thin films were prepared using ion implantation technique accompanied by post annealing treatments. Compared with the mono-doped ZnO thin films, the samples codoped with Co and Eu exhibit a stronger magnetization with a giant coercivity of 1200?Oe at ambient temperature. This was further verified through x-ray magnetic circular dichroism analysis, revealing the exchange interaction between the Co 3d electrons and the localized carriers induced by Eu{sup 3+} ions codoping. The insight gained with modulating coercivity in magnetic oxides opens up an avenue for applications requiring non-volatility in spintronic devices.

  4. Preparation and characterization of spray deposited n-type WO{sub 3} thin films for electrochromic devices

    SciTech Connect (OSTI)

    Sivakumar, R.; Moses Ezhil Raj, A.; Subramanian, B.; Jayachandran, M.; Trivedi, D.C.; Sanjeeviraja, C

    2004-08-03T23:59:59.000Z

    The n-type tungsten oxide (WO{sub 3}) polycrystalline thin films have been prepared at an optimized substrate temperature of 250 deg. C by spray pyrolysis technique. Precursor solution of ammonium tungstate ((NH{sub 4}){sub 2}WO{sub 4}) was sprayed onto the well cleaned, pre-heated fluorine doped tin oxide coated (FTO) and glass substrates with a spray rate of 15 ml/min. The structural, surface morphological and optical properties of the as-deposited WO{sub 3} thin films were studied. Mott-Schottky (M-S) studies of WO{sub 3}/FTO electrodes were conducted in Na{sub 2}SO{sub 4} solution to identify their nature and extract semiconductor parameters. The electrochromic properties of the as-deposited and lithiated WO{sub 3}/FTO thin films were analyzed by employing them as working electrodes in three electrode electrochemical cell using an electrolyte containing LiClO{sub 4} in propylene carbonate (PC) solution.

  5. Metal oxide films on metal

    DOE Patents [OSTI]

    Wu, Xin D. (Los Alamos, NM); Tiwari, Prabhat (Los Alamos, NM)

    1995-01-01T23:59:59.000Z

    A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

  6. Suppressing light reflection from polycrystalline silicon thin films through surface texturing and silver nanostructures

    SciTech Connect (OSTI)

    Akhter, Perveen [Department of Physics, University at Albany-SUNY, Albany, New York 12222 (United States); Huang, Mengbing, E-mail: mhuang@albany.edu; Kadakia, Nirag; Spratt, William; Malladi, Girish; Bakhru, Hassarum [SUNY College of Nanoscale Science and Engineering, Albany, New York 12203 (United States)

    2014-09-21T23:59:59.000Z

    This work demonstrates a novel method combining ion implantation and silver nanostructures for suppressing light reflection from polycrystalline silicon thin films. Samples were implanted with 20-keV hydrogen ions to a dose of 10{sup 17}/cm{sup 2}, and some of them received an additional argon ion implant to a dose of 5?×?10{sup 15} /cm{sup 2} at an energy between 30 and 300?keV. Compared to the case with a single H implant, the processing involved both H and Ar implants and post-implantation annealing has created a much higher degree of surface texturing, leading to a more dramatic reduction of light reflection from polycrystalline Si films over a broadband range between 300 and 1200?nm, e.g., optical reflection from the air/Si interface in the AM1.5 sunlight condition decreasing from ?30% with an untextured surface to below 5% for a highly textured surface after post-implantation annealing at 1000?°C. Formation of Ag nanostructures on these ion beam processed surfaces further reduces light reflection, and surface texturing is expected to have the benefit of diminishing light absorption losses within large-size (>100?nm) Ag nanoparticles, yielding an increased light trapping efficiency within Si as opposed to the case with Ag nanostructures on a smooth surface. A discussion of the effects of surface textures and Ag nanoparticles on light trapping within Si thin films is also presented with the aid of computer simulations.

  7. Electrically Modulated Thin Film Dynamics Controlling Bubble Manipulation in Microfluidic Confinement

    E-Print Network [OSTI]

    Debapriya Chakraborty; Suman Chakraborty

    2014-12-03T23:59:59.000Z

    Thin film dynamics and associated instability mechanisms have triggered a wide range of scientific innovations, as attributed to their abilities of creating fascinating patterns over small scales. Here, we demonstrate a new thin film instability phenomenon governed by electro-mechanics and hydrodynamics over interfacial scales in a narrow fluidic confinement. We first bring out the essential physics of this instability mechanism, in consideration with the fact that under the action of axial electrical field in a confined microfluidic environment, perturbations may be induced on the interfaces of thin corner films formed adjacent to the walls of a microchannel, leading to the inception of ordered lateral structures. A critical electric field exists beyond which these structures from the walls of the confinement intermingle to evolve into localized gas pockets in the form of bubbles. These bubbles do not remain static with further changes in electric field, but undergo a sequence of elongation-deformation-breakup episode in a dynamically evolving manner. By elucidating the complex interplay of electro-hydrodynmic forces and surface tension, we offer further insights into a new paradigm of interfacial instability mediated controlled microbubble manipulation for on-chip applications, bearing far-ranging scientific and technological consequences in executing designed fluidic operations in confined miniaturized environment.

  8. Atomic and Electronic Structure of Polar Oxide Interfaces

    SciTech Connect (OSTI)

    Gajdardziska-Josifovska, Marija [University of Wisconsin Milwaukee] [University of Wisconsin Milwaukee

    2014-01-17T23:59:59.000Z

    In this project we developed fundamental understanding of atomic and electronic mechanisms for stabilization of polar oxide interfaces. An integrated experimental and theoretical methodology was used to develop knowledge on this important new class of ionic materials with limited dimensionality, with implications for multiple branches of the basic and applied energy sciences.

  9. Nanoscale chemical and mechanical characterization of thin films:sum frequency generation (SFG) vibrational spectroscopy at buriedinterfaces

    SciTech Connect (OSTI)

    Kweskin, S.J.

    2006-05-19T23:59:59.000Z

    Sum frequency generation (SFG) surface vibrational spectroscopy was used to characterize interfaces pertinent to current surface engineering applications, such as thin film polymers and novel catalysts. An array of advanced surface science techniques like scanning probe microscopy (SPM), x-ray photoelectron spectroscopy (XPS), gas chromatography (GC) and electron microscopy were used to obtain experimental measurements complementary to SFG data elucidating polymer and catalyst surface composition, surface structure, and surface mechanical behavior. Experiments reported in this dissertation concentrate on three fundamental questions: (1) How does the interfacial molecular structure differ from that of the bulk in real world applications? (2) How do differences in chemical environment affect interface composition or conformation? (3) How do these changes correlate to properties such as mechanical or catalytic performance? The density, surface energy and bonding at a solid interface dramatically alter the polymer configuration, physics and mechanical properties such as surface glass transition, adhesion and hardness. The enhanced sensitivity of SFG at the buried interface is applied to three systems: a series of acrylates under compression, the compositions and segregation behavior of binary polymer polyolefin blends, and the changes in surface structure of a hydrogel as a function of hydration. In addition, a catalytically active thin film of polymer coated nanoparticles is investigated to evaluate the efficacy of SFG to provide in situ information for catalytic reactions involving small mass adsorption and/or product development. Through the use of SFG, in situ total internal reflection (TIR) was used to increase the sensitivity of SFG and provide the necessary specificity to investigate interfaces of thin polymer films and nanostructures previously considered unfeasible. The dynamic nature of thin film surfaces is examined and it is found that the non-equilibrium states contribute to practical applications of acrylates, blends and hydrogels. Lastly, nanoparticle surfaces and the catalytic activity and selectivity of platinum cube nanoparticles are correlated to the surface intermediates in a high pressure flow reactor.

  10. Topological transitions in evaporating thin films

    E-Print Network [OSTI]

    Avraham Klein; Oded Agam

    2012-07-31T23:59:59.000Z

    A thin water film evaporating from a cleaved mica substrate undergoes a first-order phase transition between two values of film thickness. During evaporation, the interface between the two phases develops a fingering instability similar to that observed in the Saffman-Taylor problem. The dynamics of the droplet interface is dictated by an infinite number of conserved quantities: all harmonic moments decay exponentially at the same rate. A typical scenario is the nucleation of a dry patch within the droplet domain. We construct solutions of this problem and analyze the toplogical transition occuring when the boundary of the dry patch meets the outer boundary. We show a duality between Laplacian growth and evaporation, and utilize it to explain the behaviour near the transition. We construct a family of problems for which evaporation and Laplacian growth are limiting cases and show that a necessary condition for a smooth topological transition, in this family, is that all boundaries share the same pressure.

  11. Viscous fingering in volatile thin films

    E-Print Network [OSTI]

    Oded Agam

    2009-02-23T23:59:59.000Z

    A thin water film on a cleaved mica substrate undergoes a first order phase transition between two values of film thickness. By inducing a finite evaporation rate of the water, the interface between the two phases develops a fingering instability similar to that observed in the Saffman-Taylor problem. We draw the connection between the two problems, and construct solutions describing the dynamics of evaporation in this system.

  12. Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

    SciTech Connect (OSTI)

    Hong, Seok Man; Kim, Hee-Dong; An, Ho-Myoung; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

    2013-12-15T23:59:59.000Z

    Graphical abstract: - Highlights: • The resistive switching characteristics of WN{sub x} thin films. • Excellent CMOS compatibility WN{sub x} films as a resistive switching material. • Resistive switching mechanism revealed trap-controlled space charge limited conduction. • Good endurance and retention properties over 10{sup 5} cycles, and 10{sup 5} s, respectively - Abstract: We report the resistive switching (RS) characteristics of tungsten nitride (WN{sub x}) thin films with excellent complementary metal-oxide-semiconductor (CMOS) compatibility. A Ti/WN{sub x}/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WN{sub x} films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >10{sup 5} cycles and a long retention time of >10{sup 5} s.

  13. Oxygen off-stoichiometry and phase separation in EuO thin films

    SciTech Connect (OSTI)

    Altendorf, S. G.; Efimenko, A.; Oliana, V. [II. Physikalisches Institut, Universitaet zu Koeln, Zuelpicher Str. 77, DE-50937 Koeln (Germany); Max Planck Institute for Chemical Physics of Solids, Noethnitzerstr. 40, DE-01187 Dresden (Germany); Kierspel, H. [II. Physikalisches Institut, Universitaet zu Koeln, Zuelpicher Str. 77, DE-50937 Koeln (Germany); Rata, A. D.; Tjeng, L. H. [Max Planck Institute for Chemical Physics of Solids, Noethnitzerstr. 40, DE-01187 Dresden (Germany)

    2011-10-15T23:59:59.000Z

    We report on our study on the influence of the growth conditions on the europium/oxygen stoichiometry, morphology, magnetic properties, and electrical conductivity of EuO thin films. SQUID magnetometry and x-ray photoelectron spectroscopy were utilized as complementary techniques to determine the oxygen content of EuO{sub 1{+-}x} thin films grown by molecular beam epitaxy with and without the employment of the so-called Eu distillation process. We found indications for phase separation to occur in Eu-rich as well as in over-oxidized EuO for films grown at substrate temperatures below the Eu distillation temperature. Only a fraction of the excess Eu contributes to the metal-insulator transition in Eu-rich films grown under these conditions. We also observed that the surfaces of these films were ill defined and may even contain more Eu excess than the film average. Only EuO films grown under distillation conditions are guaranteed to have the same magnetic and electrical properties as stoichiometric bulk EuO, and to have surfaces with the proper Eu/O stoichiometry and electronic structure.

  14. Thin films of gallium arsenide on low-cost substrates. Final technical report, July 5, 1976-December 5, 1978

    SciTech Connect (OSTI)

    Ruth, R.P.; Dapkus, P.D.; Dupuis, R.D.; Johnson, R.E.; Moudy, L.A.; Yang, J.J.; Yingling, R.D.

    1980-03-01T23:59:59.000Z

    The MO-CVD technique was applied to the growth of thin films of GaAs and GaAl As on inexpensive polycrystalline or amorphous substrate materials (primarily glasses and metals) for use in fabrication of large-area low-cost photovoltaic device structures. Trimethylgallium, arsine, and trimethylaluminum are mixed in appropriate concentrations at room temperature in the gaseous state and pyrolyzed at the substrate, which is heated in a vertical reactor chamber to temperatures of 700 to 750/sup 0/C, to produce the desired film composition and properties. Studies of the properties of grain boundaries in polycrystalline GaAs films by the use of transport measurements as a function of temperature indicated that the grain boundary regions are depleted of majority carriers by a large density of neutral traps at the grain boundary interface, causing a barrier to majority carrier flow in the material. Schottky-barrier solar cells of approx. 3 percent efficiency (simulated AM0 illumination, no AR coating) were demonstrated on thin-film polycrystalline GaAs n/n/sup +/ structures on Mo sheet, Mo film/glass, and graphite substrates. Substantial enhancement of average grain size in polycrystalline MO-CVD GaAs films on Mo sheet was obtained by the addition of HCl to the growth atmosphere during deposition. Extensive investigation of polycrystalline thin-film p-n junctions indicated that the forward voltage of such devices is apparently limited to 0.5 to 0.6V. A laboratory-type deposition apparatus for the formation of TiO/sub 2/ antireflection (AR) coatings by pyrolysis of titanium isopropoxide was assembled and tested. Detailed analyses were made of the materials and labor costs involved in the laboratory-scale fabrication of MO-CVD thin-film GaAs solar cells. Details are presented. (WHK)

  15. First-principles study of compensation mechanisms in negatively charged LaGaO3/MgAl2O4 interfaces

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rébola, Alejandro; Fong, Dillon D.; Eastman, Jeffrey A.; Ö?üt, Serdar; Zapol, Peter

    2013-06-01T23:59:59.000Z

    Thin film oxide heterostructures with a bound charge at the interface require electrical compensation, which can involve redistribution of mobile charge carriers. We explore a model LaGaO3(001)//MgAl2O4(001) heterostructure with nominally negatively charged interfaces using first-principles methods and a Poisson-Boltzmann equation. We find that charge compensation by oxygen vacancies with quadratically decaying concentration away from the interface is more favorable than electronic redistribution. These vacancies have a potential to enhance ionic conductivity along the interfaces.

  16. Impact of environmental conditions on the chemical surface properties of Cu(In,Ga)(S,Se){sub 2} thin-film solar cell absorbers

    SciTech Connect (OSTI)

    Hauschild, D., E-mail: dirk.hauschild@physik.uni-wuerzburg.de, E-mail: l.weinhardt@kit.edu; Meyer, F. [Experimental Physics VII, University of Würzburg, Am Hubland, 97074 Würzburg (Germany); Pohlner, S.; Lechner, R.; Dietmüller, R.; Palm, J. [AVANCIS GmbH and Co. KG, Otto-Hahn-Ring 6, 81739 Munich (Germany); Heske, C. [Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), Hermann-v.-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology (KIT), Hermann-v.-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Department of Chemistry, University of Nevada, Las Vegas (UNLV), 4505 Maryland Parkway, Las Vegas, Nevada 89154-4003 (United States); Institute for Chemical Technology and Polymer Chemistry, Karlsruhe Institute of Technology (KIT), Engesserstr. 18/20, 76128 Karlsruhe (Germany); Weinhardt, L., E-mail: dirk.hauschild@physik.uni-wuerzburg.de, E-mail: l.weinhardt@kit.edu [Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), Hermann-v.-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology (KIT), Hermann-v.-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Department of Chemistry, University of Nevada, Las Vegas (UNLV), 4505 Maryland Parkway, Las Vegas, Nevada 89154-4003 (United States); Reinert, F. [Experimental Physics VII, University of Würzburg, Am Hubland, 97074 Würzburg (Germany); Karlsruhe Institute of Technology (KIT), Gemeinschaftslabor für Nanoanalytik, 76021 Karlsruhe (Germany)

    2014-05-14T23:59:59.000Z

    Environmentally driven aging effects play a crucial role in thin-film solar cells based on Cu(In,Ga)(S,Se){sub 2}, both for long-term stability and short air exposure during production. For a better understanding of such effects, Cu(In,Ga)(S,Se){sub 2} absorber surfaces were investigated by x-ray photoelectron and Auger electron spectroscopy after exposure to different environmental conditions. Identical absorbers were stored in a nitrogen atmosphere, in damp heat, and under ambient conditions for up to 14 days. We find varying degrees of diffusion of sulfur, copper, and sodium towards the surface, with potential impact on the electronic surface structure (band gap) and the properties of the interface to a buffer layer in a solar cell device. Furthermore, we observe an oxidation (in decreasing order) of indium, copper, and selenium (but no oxidation of sulfur). And finally, varying amounts of carbon- and oxygen-containing adsorbates are found. In particular, the findings suggest that, for ambient air exposure, sodium carbonate is formed at the surface.

  17. Method for formation of thin film transistors on plastic substrates

    DOE Patents [OSTI]

    Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

    1998-10-06T23:59:59.000Z

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

  18. Eddy Current Testing for Detecting Small Defects in Thin Films

    SciTech Connect (OSTI)

    Obeid, Simon; Tranjan, Farid M. [Electrical and Computer Engineering Department, UNCC (United States); Dogaru, Teodor [Albany Instruments, 426-O Barton Creek, Charlotte, NC 28262 (United States)

    2007-03-21T23:59:59.000Z

    Presented here is a technique of using Eddy Current based Giant Magneto-Resistance sensor (GMR) to detect surface and sub-layered minute defects in thin films. For surface crack detection, a measurement was performed on a copper metallization of 5-10 microns thick. It was done by scanning the GMR sensor on the surface of the wafer that had two scratches of 0.2 mm, and 2.5 mm in length respectively. In another experiment, metal coatings were deposited over the layers containing five defects with known lengths such that the defects were invisible from the surface. The limit of detection (resolution), in terms of defect size, of the GMR high-resolution Eddy Current probe was studied using this sample. Applications of Eddy Current testing include detecting defects in thin film metallic layers, and quality control of metallization layers on silicon wafers for integrated circuits manufacturing.

  19. Method for formation of thin film transistors on plastic substrates

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

    1998-10-06T23:59:59.000Z

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

  20. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, S.P.; Chamberlin, R.

    1999-02-09T23:59:59.000Z

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

  1. Thin-Film Reliability Trends Toward Improved Stability

    SciTech Connect (OSTI)

    Jordan, D. C.; Kurtz, S. R.

    2011-01-01T23:59:59.000Z

    Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (R{sub d}) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2 {+-} 0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

  2. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

    1997-10-07T23:59:59.000Z

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  3. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

    1999-02-09T23:59:59.000Z

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  4. Thin-Film Reliability Trends Toward Improved Stability: Preprint

    SciTech Connect (OSTI)

    Jordan, D. C.; Kurtz, S. R.

    2011-07-01T23:59:59.000Z

    Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (Rd) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2+/-0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

  5. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2010-06-15T23:59:59.000Z

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  6. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2006-10-31T23:59:59.000Z

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  7. Chemical deposition of thin films of lead selenide

    E-Print Network [OSTI]

    Skovlin, Dean Oliver

    1956-01-01T23:59:59.000Z

    LIBRARY A A IN COLLEGE OF TEXAS CHEMICAL DEPOSITIOH OF THIN FILMS OF LEAD SELEHIDE A THESIS DEAN OLIVER SEOVLIH Submitted to the Graduate School of the Agricultural and Mechanical College of Texas in partial fulfillment of the requirements..., the author is indebted for her encouragenent and understanding which wade this study possible. iv I INTRODUCTIOW . I I LITERATURE SURVEY. I II EXP ERIMEHTAL Page 1. Choice of Reagents. 2. The Reaction of DMS and Lead Ritrate in Aqueous Solution. 3...

  8. Experimental thin film deposition and surface analysis techniques

    SciTech Connect (OSTI)

    Collins, W.E.; Rambabu, B.

    1986-01-01T23:59:59.000Z

    An attempt has been made to present some of the thin-film deposition and surface analysis techniques which may be useful in growing superionic conducting materials. Emphasis is made on the importance of being careful in selecting process parameters and materials in order to produce films with properties outlined in this article. Also, special care should be given to proper consideration of grain boundary effects.

  9. Electrical properties of quench-condensed thin film

    E-Print Network [OSTI]

    Lee, Kyoungjin

    2009-05-15T23:59:59.000Z

    cryopump is used for high vacuum pumping. Materials to be evaporated (evaporant) are held by evaporation sources, like a crucible, boat or wire coil. Tungsten wire is commonly used as an evaporation source for materials like aluminum, nickel, chromium... films were evaporated at room temperature with NRC 3114 commercial thermal evaporator. We deposited aluminum and nickel thin films in a form of bar with shadow mask. A commercial tungsten basket was used for the evaporation source. The evaporation...

  10. Formation of thin-film resistors on silicon substrates

    DOE Patents [OSTI]

    Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

    1988-11-01T23:59:59.000Z

    The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

  11. Strain mapping on gold thin film buckling and siliconblistering

    SciTech Connect (OSTI)

    Goudeau, P.; Tamura, N.; Parry, G.; Colin, J.; Coupeau, C.; Cleymand, F.; Padmore, H.

    2005-09-01T23:59:59.000Z

    Stress/Strain fields associated with thin film buckling induced by compressive stresses or blistering due to the presence of gas bubbles underneath single crystal surfaces are difficult to measure owing to the microscale dimensions of these structures. In this work, we show that micro Scanning X-ray diffraction is a well suited technique for mapping the strain/stress tensor of these damaged structures.

  12. Optical sensors and multisensor arrays containing thin film electroluminescent devices

    DOE Patents [OSTI]

    Aylott, Jonathan W. (Ann Arbor, MI); Chen-Esterlit, Zoe (Ann Arbor, MI); Friedl, Jon H. (Ames, IA); Kopelman, Raoul (Ann Arbor, MI); Savvateev, Vadim N. (Ames, IA); Shinar, Joseph (Ames, IA)

    2001-12-18T23:59:59.000Z

    Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.

  13. Substrates suitable for deposition of superconducting thin films

    DOE Patents [OSTI]

    Feenstra, Roeland (Oak Ridge, TN); Boatner, Lynn A. (Oak Ridge, TN)

    1993-01-01T23:59:59.000Z

    A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

  14. Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

    SciTech Connect (OSTI)

    Kizu, Takio; Aikawa, Shinya; Mitoma, Nobuhiko; Shimizu, Maki; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-04-14T23:59:59.000Z

    Thin-film transistors (TFTs) with a high stability and a high field-effect mobility have been achieved using W-doped indium oxide semiconductors in a low-temperature process (?150?°C). By incorporating WO{sub 3} into indium oxide, TFTs that were highly stable under a negative bias stress were reproducibly achieved without high-temperature annealing, and the degradation of the field-effect mobility was not pronounced. This may be due to the efficient suppression of the excess oxygen vacancies in the film by the high dissociation energy of the bond between oxygen and W atoms and to the different charge states of W ions.

  15. Geometric shape control of thin film ferroelectrics and resulting structures

    DOE Patents [OSTI]

    McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN)

    2000-01-01T23:59:59.000Z

    A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

  16. Investigation of the magnetic properties of insulating thin films using the longitudinal spin Seebeck effect

    SciTech Connect (OSTI)

    Kehlberger, A., E-mail: kehlberg@uni-mainz.de; Jakob, G.; Kläui, M. [Institute of Physics, University of Mainz, 55099 Mainz (Germany); Onbasli, M. C.; Kim, D. H.; Ross, C. A. [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2014-05-07T23:59:59.000Z

    The longitudinal spin Seebeck effect is used as a detector for the magnetic properties and switching characteristics of magnetic thin insulating films. We use a 300 nm and a 20?nm thick Yttrium Iron Garnet (YIG, Y{sub 3}Fe{sub 5}O{sub 12}) film prepared by pulsed laser deposition and afterwards coated by platinum for the detection of the thermally excited magnons by the inverse spin Hall effect. The inverse spin Hall signals reveal a magnetic uniaxial anisotropy along the direction of the platinum stripe in the thicker film. For the thin film we find a more isotropic behavior, which is complementarily observed using the magnetoresistance occurring at the platinum/YIG interface. We explain our results on the basis of x-ray diffraction data, which reveal a miscut of the substrate and film surface and an expansion of the YIG lattice. Both findings favor a growth-induced magnetic anisotropy that we observe.

  17. Influence of curvature on the device physics of thin film transistors on flexible substrates

    SciTech Connect (OSTI)

    Amalraj, Rex; Sambandan, Sanjiv, E-mail: sanjiv@iap.iisc.ernet.in [Flexible Electronics Lab, Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012 (India)

    2014-10-28T23:59:59.000Z

    Thin film transistors (TFTs) on elastomers promise flexible electronics with stretching and bending. Recently, there have been several experimental studies reporting the behavior of TFTs under bending and buckling. In the presence of stress, the insulator capacitance is influenced due to two reasons. The first is the variation in insulator thickness depending on the Poisson ratio and strain. The second is the geometric influence of the curvature of the insulator-semiconductor interface during bending or buckling. This paper models the role of curvature on TFT performance and brings to light an elegant result wherein the TFT characteristics is dependent on the area under the capacitance-distance curve. The paper compares models with simulations and explains several experimental findings reported in literature.

  18. Short communication Chemically abrupt interface between Ce oxide and Fe films

    E-Print Network [OSTI]

    Kim, Sehun

    layer barrier. This situation can lead to partial oxidation of the ferromagnetic metals and degradationShort communication Chemically abrupt interface between Ce oxide and Fe films H.G. Lee a,b , D. Lee online 24 May 2005 Abstract A chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation

  19. Methods for fabricating thin film III-V compound solar cell

    DOE Patents [OSTI]

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09T23:59:59.000Z

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  20. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, J.J. III; Halpern, B.L.

    1993-10-26T23:59:59.000Z

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.