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1

Photoluminescence quenching of tris-(8-hydroxyquinoline) aluminum thin films at interfaces with metal oxide films of different conductivities  

E-Print Network [OSTI]

We report a comprehensive study of photoluminescence (PL) quenching of tris-(8-hydroxyquinoline) aluminum (Alq[subscript ]3) at interfaces with thin films of tin oxide (SnO[subscript 2]) using both steady-state and ...

Mei, Jun

2

Direct Measurement of Oxygen Incorporation into Thin Film Oxides...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Measurement of Oxygen Incorporation into Thin Film Oxides at Room Temperature Upon Ultraviolet Phton Irradiation. Direct Measurement of Oxygen Incorporation into Thin Film Oxides...

3

Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces  

SciTech Connect (OSTI)

A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe{sub 2}O{sub 4} films can be grown epitaxially on Si(111) using a Y{sub 2}O{sub 3} buffer layer, and remarkably the Y{sub 2}O{sub 3}/Si(111) interface is stable and remains atomically sharp. CoFe{sub 2}O{sub 4} films present high crystal quality and high saturation magnetization.

Coux, P. de [Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Barcelona (Spain); CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4 (France); Bachelet, R.; Fontcuberta, J.; Sánchez, F., E-mail: fsanchez@icmab.es [Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Barcelona (Spain); Warot-Fonrose, B. [CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4 (France); Skumryev, V. [Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Spain and Dep. de Física, Univ. Autònoma de Barcelona, 08193 Bellaterra (Spain); Lupina, L.; Niu, G.; Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

2014-07-07T23:59:59.000Z

4

CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS  

E-Print Network [OSTI]

CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS by David T. Oliphant. Woolley Dean, College of Physical and Mathematical Sciences #12;ABSTRACT CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS David T. Oliphant Department of Physics and Astronomy

Hart, Gus

5

Electrochromism in copper oxide thin films  

SciTech Connect (OSTI)

Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

Richardson, T.J.; Slack, J.L.; Rubin, M.D.

2000-08-15T23:59:59.000Z

6

Nanostructured thin films for solid oxide fuel cells  

E-Print Network [OSTI]

The goals of this work were to synthesize high performance perovskite based thin film solid oxide fuel cell (TF-SOFC) cathodes by pulsed laser deposition (PLD), to study the structural, electrical and electrochemical properties of these cathodes...

Yoon, Jongsik

2009-05-15T23:59:59.000Z

7

Iron Oxide-Gold Core-Shell Nanoparticles and Thin-Film Assembly...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Oxide-Gold Core-Shell Nanoparticles and Thin-Film Assembly. Iron Oxide-Gold Core-Shell Nanoparticles and Thin-Film Assembly. Abstract: This paper reports findings of an...

8

Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells  

E-Print Network [OSTI]

Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells Qiumei Bian in the fabrication and assembly of thin film solar cells. Using a femtosecond (fs) laser, we selectively removed a unique scheme to ablate the indium tin-oxide layer for the fabrication of thin film solar cells

Van Stryland, Eric

9

Plasticity contributions to interface adhesion in thin-film interconnect structures  

E-Print Network [OSTI]

Plasticity contributions to interface adhesion in thin-film interconnect structures Michael Lanea of plasticity in thin copper layers on the interface fracture resistance in thin-film interconnect structures yield properties together with a plastic flow model for the metal layers were used to predict

Vainchtein, Anna

10

Nitrogen doped zinc oxide thin film  

SciTech Connect (OSTI)

To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

Li, Sonny X.

2003-12-15T23:59:59.000Z

11

Unexpected behaviour of one Pb monolayer deposited on aluminum oxide thin film grown on Ag(111)  

SciTech Connect (OSTI)

Using scanning tunneling microscopy (STM), Auger electron spectroscopy, and low energy electron diffraction, we have observed a surprising complete dissolution at room temperature of one lead monolayer deposited by evaporation on an aluminum oxide thin film (?0.8?nm thick) previously grown on Ag (111). We have observed the quasi-instantaneous diffusion of the lead deposit through the oxide layer to the silver/oxide interface. After the diffusion process, lead atoms form a Moiré superstructure, which is characterized by STM through the oxide layer. This unexpected behavior puts in light the very weak interaction between the aluminum oxide and the silver substrate.

Vizzini, Sébastien, E-mail: sebastien.vizzini@im2np.fr; Bertoglio, M. [IM2NP CNRS, Aix Marseille Université, F-13397 Marseille (France)] [IM2NP CNRS, Aix Marseille Université, F-13397 Marseille (France); Oughaddou, Hamid [Institut des Sciences Moléculaires d'Orsay, ISMO CNRS, Université de Paris, F-91405 Orsay, France and Deptartamento de Physique, Université de Cergy-Pontoise, F-95031 Cergy-Pontoise (France)] [Institut des Sciences Moléculaires d'Orsay, ISMO CNRS, Université de Paris, F-91405 Orsay, France and Deptartamento de Physique, Université de Cergy-Pontoise, F-95031 Cergy-Pontoise (France); Hoarau, J. Y.; Biberian, J. P.; Aufray, B. [CINaM CNRS, Aix Marseille Université, F-13288 Marseille (France)] [CINaM CNRS, Aix Marseille Université, F-13288 Marseille (France)

2013-12-23T23:59:59.000Z

12

High quality transparent conducting oxide thin films  

DOE Patents [OSTI]

A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

Gessert, Timothy A. (Conifer, CO); Duenow, Joel N. (Golden, CO); Barnes, Teresa (Evergreen, CO); Coutts, Timothy J. (Golden, CO)

2012-08-28T23:59:59.000Z

13

Study of lithium diffusion in RF sputtered Nickel/Vanadium mixed oxides thin films  

E-Print Network [OSTI]

Study of lithium diffusion in RF sputtered NickelÁ/Vanadium mixed oxides thin films F. Artuso a lithium insertion inside RF sputtered Ni/V mixed oxides thin films have been investigated employing, showed three steps clearly involved in the intercalation mechanism of lithium in the oxide films: (i

Artuso, Florinda

14

Thin film preparation and interfacial reaction study of solid oxide fuel cell materials  

SciTech Connect (OSTI)

Solid oxide fuel cells (SOFC's) operate at 1000 C and their components are processed at even higher temperatures. It is generally desirable to reduce the operating and processing temperatures of SOFC's to make them competitive with other types of fuel cells and to avoid the interactions and interdiffusion between cell components. This can be achieved by either developing a technology to produce thin film electrolytes, or by developing new electrolyte and electrode materials with reduced interaction, lower interfacial resistance. The synthesis and characterization of (Ce-O2)0.8(Sm01.5)0.2 thin films from polymeric precursors is discussed. The reaction mechanism of the precursors and important parameters for making dense, crack-free films were investigated. The cathode/electrolyte interactions and their expected impact on SOFC performance are addressed. The cathode characteristics and cathode/electrolyte interaction of various perovskites are studied. The impact of interfacial reactions on cell performance is investigated. The electrode characteristics of dense La0.6Sr0.4Co0.2Fe0.8O3 (LSCF) thin film produced by polymeric precursors are presented. The electrode resistance and characteristics of the electrode (dense)/electrolyte interface are studied. The effect of reactions and interdiffusion on interfacial resistance are discussed. A potential method for making dense ZrO2 films at relatively low temperatures by plasma-enhanced chemical vapor deposition is presented. The deposition parameters and characterization of ZrO2 film are reported.

Chen, Chiehcheng.

1992-01-01T23:59:59.000Z

15

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof  

DOE Patents [OSTI]

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Perkins, John (Boulder, CO); Van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David (Evergreen, CO); Taylor, Matthew (Golden, CO); Neuman, George A. (Holland, MI); Luten, Henry A. (Holland, MI); Forgette, Jeffrey A. (Hudsonville, MI); Anderson, John S. (Holland, MI)

2010-07-13T23:59:59.000Z

16

Studies on nickel-tungsten oxide thin films  

SciTech Connect (OSTI)

Nickel-Tungsten oxide (95:5) thin films were prepared by rf sputtering at 200W rf power with various substrate temperatures. X-ray diffraction study reveals the amorphous nature of films. The substrate temperature induced decrease in energy band gap with a maximum transmittance of 71%1 was observed. The Micro-Raman study shows broad peaks at 560 cm{sup ?1} and 1100 cm{sup ?1} correspond to Ni-O vibration and the peak at 860 cm{sup ?1} can be assigned to the vibration of W-O-W bond. Photoluminescence spectra show two peaks centered on 420 nm and 485 nm corresponding to the band edge emission and vacancies created due to the addition of tungsten, respectively.

Usha, K. S. [Department of Physics, Alagappa University, Karaikudi - 630 004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi - 630 004 (India); Sanjeeviraja, C. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi - 630 004 (India)

2014-10-15T23:59:59.000Z

17

Transparent and Conductive Carbon Nanotube Multilayer Thin Films Suitable as an Indium Tin Oxide Replacement  

E-Print Network [OSTI]

Transparent electrodes made from metal oxides suffer from poor flexibility and durability. Highly transparent and electrically conductive thin films based on carbon nanotubes (CNTs) were assembled as a potential indium tin oxide (ITO) replacement...

Park, Yong Tae

2012-07-16T23:59:59.000Z

18

Hybrid deposition of thin film solid oxide fuel cells and electrolyzers  

DOE Patents [OSTI]

The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

1998-05-19T23:59:59.000Z

19

Femtosecond pump-probe studies of reduced graphene oxide thin films  

E-Print Network [OSTI]

The dynamics of photocarriers in reduced graphene oxide thin films is studied by using ultrafast pump-probe spectroscopy. Time dependent differential transmissions are measured with sample temperatures ranging from 9 to 300 K. At each sample...

Ruzicka, Brian Andrew; Werake, Lalani Kumari; Zhao, Hui; Wang, Shuai; Loh, Kian Ping

2010-04-01T23:59:59.000Z

20

Near-infrared photodetector consisting of J-aggregating cyanine dye and metal oxide thin films  

E-Print Network [OSTI]

We demonstrate a near-infrared photodetector that consists of a thin film of the J-aggregating cyanine dye, U3, and transparent metal-oxide charge transport layers. The high absorption coefficient of the U3 film, combined ...

Osedach, Timothy P.

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering  

E-Print Network [OSTI]

Cuprous oxide (Cu[subscript 2]O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu[subscript 2]O thin films deposited by reactive dc magnetron ...

Lee, Yun Seog

22

Defect engineering of cuprous oxide thin-films for photovoltaic applications  

E-Print Network [OSTI]

Thin-film solar cells are promising for renewable-energy applications due to their low material usage and inexpensive manufacturing potential, making them compatible with terawatts-level deployment. Cuprous oxide (Cu?O) ...

Lee, Yun Seog

2013-01-01T23:59:59.000Z

23

Properties and sensor performance of zinc oxide thin films  

E-Print Network [OSTI]

Reactively sputtered ZnO thin film gas sensors were fabricated onto Si wafers. The atmosphere dependent electrical response of the ZnO micro arrays was examined. The effects of processing conditions on the properties and ...

Min, Yongki, 1965-

2003-01-01T23:59:59.000Z

24

Nanostructured ceria based thin films ({<=}1 {mu}m) As cathode/electrolyte interfaces  

SciTech Connect (OSTI)

Gadolinium doped cerium oxide (CGO: Ce{sub 0,9}Gd{sub 0,1}O{sub 2-{delta}}) films were used as an oxygen anion diffusion layer at the cathode/electrolyte interface of Solid Oxide Fuel Cells (SOFCs), between LSCF (lanthanum strontium cobalt ferrite) and YSZ (yttria-stabilized zirconia). Thin ({approx}100 nm) and thick ({approx}700 nm) mesoporous CGO layers were synthesized through a sol-gel process including organic template coupled with the dip-coating method. Structural and microstructural characterizations were performed, highlighting a well-bonded crystalline CGO nanoparticles network which delineates a 3-D inter-connected mesoporous network. Their electrical behaviors were investigated by impedance spectroscopy analysis of YSZ/mesoporous-CGO/LSCF half-cell. Anode-supported SOFCs, operating at 800 Degree-Sign C, with either dense or mesoporous CGO dip-coated interlayers were also fabricated [NiO-YSZ anode/YSZ/CGO/LSCF cathode]. The impact of the mesoporous CGO interlayers on SOFCs performances was investigated by galvanostatic analysis and compared to the behavior of a dense CGO interlayer. The polarization curves revealed an enhancement in the electrical performance of the cell, which is assigned to a decrease of the polarization resistance at the cathode/electrolyte interface. The integrity and connectivity of the CGO nanoparticles bonded network facilitates O{sup 2-} transport across the interface. - Graphical abstract: Thin and thick CGO films have been prepared through a sol-gel process and their potential application as SOFC cathode/electrolyte interlayer in SOFC has been investigated. Highlights: Black-Right-Pointing-Pointer Mesoporous ceria based thin films exhibit interesting performances for Solid Oxide Fuel Cell. Black-Right-Pointing-Pointer Mesoporous films were synthesized through the sol-gel process combined with the dip-coating. Black-Right-Pointing-Pointer Integrity and connectivity of the nanoparticles facilitates O{sup 2-} transport across the interface.

Hierso, J. [Laboratoire de Chimie de la Matiere Condensee de Paris, Universite Paris 6-UMR 7574-College de France, 11 Place Marcelin Berthelot, 75005 Paris (France); Boy, P.; Valle, K. [CEA-Le Ripault, LSCG, BP 15, 37000 Monts (France); Vulliet, J.; Blein, F. [CEA-Le Ripault, LCCA, BP 15, 37000 Monts (France); Laberty-Robert, Ch., E-mail: christel.laberty@upmc.fr [Laboratoire de Chimie de la Matiere Condensee de Paris, Universite Paris 6-UMR 7574-College de France, 11 Place Marcelin Berthelot, 75005 Paris (France); Sanchez, C. [Laboratoire de Chimie de la Matiere Condensee de Paris, Universite Paris 6-UMR 7574-College de France, 11 Place Marcelin Berthelot, 75005 Paris (France)

2013-01-15T23:59:59.000Z

25

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films  

SciTech Connect (OSTI)

Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO{sub 2} film under bipolar pulsed-field operation. High field cycling causes a “wake-up” in virgin “pinched” polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up.

Zhou, Dayu, E-mail: zhoudayu@dlut.edu.cn [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China) [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Xu, Jin [Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian 116023 (China)] [Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian 116023 (China); Li, Qing; Guan, Yan [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China)] [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Cao, Fei; Dong, Xianlin [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)] [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Müller, Johannes [Fraunhofer IPMS-CNT, Koengisbruecker Strasse 180, 01109 Dresden (Germany)] [Fraunhofer IPMS-CNT, Koengisbruecker Strasse 180, 01109 Dresden (Germany); Schenk, Tony; Schröder, Uwe [Namlab gGmbH/TU Dresden, Noethnitzer Strasse 64, 01187 Dresden (Germany)] [Namlab gGmbH/TU Dresden, Noethnitzer Strasse 64, 01187 Dresden (Germany)

2013-11-04T23:59:59.000Z

26

Electrodeposited ruthenium oxide thin films for supercapacitor: Effect of surface treatments  

E-Print Network [OSTI]

Electrodeposited ruthenium oxide thin films for supercapacitor: Effect of surface treatments V Supercapacitor is similar to a regular capacitor in operation; however, it offers a very high capacitance for supercapacitor should be able to get oxidized and reduce reversibility between various oxidation states [1

Chow, Lee

27

Characterization of the Electronic and Chemical Structure at the Thin Film Solar Cell Interfaces: June 2005 -- June 2009  

SciTech Connect (OSTI)

Study using photoelectron spectroscopy, inverse photoemission, and X-ray absorption and emission to derive the electronic structure of interfaces in CIGSS and CdTe thin-film solar cells.

Heske, C.

2009-09-01T23:59:59.000Z

28

Nanostructured Thin Film Electrolyte for Thin Film Solid Oxide Fuel Cells  

E-Print Network [OSTI]

Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because they are clean, reliable, and almost entirely pollution-free. SOFCs have flexible fuel selections compared with other fuel cell technologies. The main...

Cho, Sungmee

2012-10-19T23:59:59.000Z

29

Phase Transformations in Pulsed Laser Deposited Nanocrystalline Tin Oxide Thin Films  

E-Print Network [OSTI]

Phase Transformations in Pulsed Laser Deposited Nanocrystalline Tin Oxide Thin Films Haiyan Fan associated with high pressure. Kaplan et al. found this phase in films grown by deposition of ionized tin. In another study, Shek et al. ob- served o-SnO2 when tin particles with an average size of 6 nm were oxidized

Reid, Scott A.

30

The Electrical and Band-Gap Properties of Amorphous Zinc-Indium-Tin Oxide Thin Films  

E-Print Network [OSTI]

MRSEC The Electrical and Band-Gap Properties of Amorphous Zinc-Indium-Tin Oxide Thin Films D Science & Engineering Center For zinc-indium-tin oxide (ZITO) films, grown by pulsed-laser deposition was replaced by substitution with zinc and tin in equal molar proportions (co-substitution). All ZITO films

Shahriar, Selim

31

Epitaxial thin films  

DOE Patents [OSTI]

Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

2006-04-25T23:59:59.000Z

32

Photo-modulated thin film transistor based on dynamic charge transfer within quantum-dots-InGaZnO interface  

SciTech Connect (OSTI)

The temporal development of next-generation photo-induced transistor across semiconductor quantum dots and Zn-related oxide thin film is reported in this paper. Through the dynamic charge transfer in the interface between these two key components, the responsibility of photocurrent can be amplified for scales of times (?10{sup 4}?A/W 450?nm) by the electron injection from excited quantum dots to InGaZnO thin film. And this photo-transistor has a broader waveband (from ultraviolet to visible light) optical sensitivity compared with other Zn-related oxide photoelectric device. Moreover, persistent photoconductivity effect can be diminished in visible waveband which lead to a significant improvement in the device's relaxation time from visible illuminated to dark state due to the ultrafast quenching of quantum dots. With other inherent properties such as integrated circuit compatible, low off-state current and high external quantum efficiency resolution, it has a great potential in the photoelectric device application, such as photodetector, phototransistor, and sensor array.

Liu, Xiang [Electronic Science and Engineering School, Southeast University, Nanjing (China); National Center for Nanoscience and Technology, Beijing (China); Yang, Xiaoxia; Liu, Mingju [National Center for Nanoscience and Technology, Beijing (China); Tao, Zhi; Wei, Lei, E-mail: lw@seu.edu.cn; Li, Chi, E-mail: lichi@seu.edu.cn; Zhang, Xiaobing; Wang, Baoping [Electronic Science and Engineering School, Southeast University, Nanjing (China); Dai, Qing, E-mail: daiq@nanoctr.cn [National Center for Nanoscience and Technology, Beijing (China); London Center for Nanotechnology, University College London, London WC1H 0AH (United Kingdom); Nathan, Arokia [Electronic Science and Engineering School, Southeast University, Nanjing (China); London Center for Nanotechnology, University College London, London WC1H 0AH (United Kingdom)

2014-03-17T23:59:59.000Z

33

Vibrational spectra of CO adsorbed on oxide thin films: A tool to probe the surface defects and phase changes of oxide thin films  

SciTech Connect (OSTI)

Thin films of iron oxide were grown on Pt(111) single crystals using cycles of physical vapor deposition of iron followed by oxidative annealing in an ultrahigh vacuum apparatus. Two procedures were utilized for film growth of ?15–30 ML thick films, where both procedures involved sequential deposition+oxidation cycles. In procedure 1, the iron oxide film was fully grown via sequential deposition+oxidation cycles, and then the fully grown film was exposed to a CO flux equivalent to 8 × 10{sup ?7} millibars, and a vibrational spectrum of adsorbed CO was obtained using infrared reflection-absorption spectroscopy. The vibrational spectra of adsorbed CO from multiple preparations using procedure 1 show changes in the film termination structure and/or chemical nature of the surface defects—some of which are correlated with another phase that forms (“phase B”), even before enough of phase B has formed to be easily detected using low energy electron diffraction (LEED). During procedure 2, CO vibrational spectra were obtained between deposition+oxidation cycles, and these spectra show that the film termination structure and/or chemical nature of the surface defects changed as a function of sequential deposition+oxidation cycles. The authors conclude that measurement of vibrational spectra of adsorbed CO on oxide thin films provides a sensitive tool to probe chemical changes of defects on the surface and can thus complement LEED techniques by probing changes not visible by LEED. Increased use of vibrational spectra of adsorbed CO on thin films would enable better comparisons between films grown with different procedures and by different groups.

Savara, Aditya, E-mail: savaraa@ornl.gov [Chemical Sciences Division, Oak Ridge National Lab, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831 (United States)

2014-03-15T23:59:59.000Z

34

Junctionless thin-film ferroelectric oxides for photovoltaic energy Farnood K. Rezaie*a  

E-Print Network [OSTI]

, and the conditions for ideal poling. Photovoltaic characterization of KBNNO cells will determine the efficiency, and cell fill factor (FF). Keywords: Bulk photovoltaics, Perovskite oxide, Ferroelectric thin-film, KBNNO. This creates opportunities for innovation in photovoltaic cells and state of the art optoelectronic devices

Peale, Robert E.

35

Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide  

SciTech Connect (OSTI)

This paper proposes the application of gallium oxide (Ga{sub 2}O{sub 3}) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga{sub 2}O{sub 3} films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O{sub 3}) as the reactants. Surface recombination velocities as low as 6.1?cm/s have been recorded with films less than 4.5?nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2?Å/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga{sub 2}O{sub 3} interface has been found to be approximately 0.5?eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9?eV.

Allen, T. G., E-mail: thomas.allen@anu.edu.au; Cuevas, A. [Research School of Engineering, Australian National University, Canberra 0200 (Australia)

2014-07-21T23:59:59.000Z

36

Spin Coated Plasmonic Nanoparticle Interfaces for Photocurrent Enhancement in Thin Film Si Solar Cells  

E-Print Network [OSTI]

Nanoparticle (NP) arrays of noble metals strongly absorb light in the visible to infrared wavelengths through resonant interactions between the incident electromagnetic field and the metal's free electron plasma. Such plasmonic interfaces enhance light absorption and photocurrent in solar cells. We report a cost effective and scalable room temperature/pressure spin-coating route to fabricate broadband plasmonic interfaces consisting of silver NPs. The NP interface yields photocurrent enhancement (PE) in thin film silicon devices by up to 200% which is significantly greater than previously reported values. For coatings produced from Ag nanoink containing particles with average diameter of 40 nm, an optimal NP surface coverage of 7% was observed. Scanning electron microscopy of interface morphologies revealed that for low surface coverage, particles are well-separated, resulting in broadband PE. At higher surface coverage, formation of particle strings and clusters caused red-shifting of the PE peak and a narro...

Israelowitz, Miriam; Cong, Tao; Sureshkumar, Radhakrishna

2013-01-01T23:59:59.000Z

37

Fatigue failure in thin-film polycrystalline silicon is due to subcritical cracking within the oxide layer  

E-Print Network [OSTI]

Fatigue failure in thin-film polycrystalline silicon is due to subcritical cracking within with stress-induced surface oxide thicken- ing and moisture-assisted subcritical cracking in the amor- phous

Ritchie, Robert

38

Solid Electrolyte/Electrode Interfaces: Atomistic Behavior Analyzed Via UHV-AFM, Surface Spectroscopies, and Computer Simulations Computational and Experimental Studies of the Cathode/Electrolyte Interface in Oxide Thin Film Batteries  

SciTech Connect (OSTI)

The goals of the research were to understand the structural, dynamic, and chemical properties of solid electrolyte surfaces and the cathode/electrolyte interface at an atomistic and nanometer level using both computational and experimental techniques.

Garofalini, Stephen H.

2012-03-21T23:59:59.000Z

39

Doped tantalum oxide high K dielectric thin films  

E-Print Network [OSTI]

, it was doped with varying amounts of titanium oxide, aluminum oxide and silicon dioxide. The composite oxide films were deposited by reactive radio frequency (RF) cc-sputtering of two targets in a variety of oxygen and argon feed gas mixtures. The targets used...

Donnelly, Joseph Patrick

2000-01-01T23:59:59.000Z

40

Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier  

SciTech Connect (OSTI)

We demonstrate an enhanced electrical stability through a Ti oxide (TiO{sub x}) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiO{sub x} thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiO{sub x} depend on the surface polarity change and electronic band structure evolution. This result indicates that TiO{sub x} on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters.

Cho, Byungsu [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Samsung Display Co. Ltd., Tangjeong, Chungcheongnam-Do 336-741 (Korea, Republic of); Choi, Yonghyuk; Shin, Seokyoon [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Jeon, Heeyoung [Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Seo, Hyungtak, E-mail: hseo@ajou.ac.kr [Department of Materials Science and Engineering and Energy Systems Research, Ajou University, Suwon 443-739 (Korea, Republic of); Jeon, Hyeongtag, E-mail: hjeon@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

2014-01-27T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Heterojunction thin films based on multifunctional metal oxides for photovoltaic application  

SciTech Connect (OSTI)

Metal oxides based multifunctional heterojunction thin films of ZnO/SnO{sub 2} and ZnO/SnO{sub 2}/CuO QDs were prepared by spin-coating technique. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The optical absorption studies revealed that the film thickness has considerable effect on the band gap values and is found to be in the range of 3.73–3.48 eV. The photoluminescence spectra showed several weak visible emission peaks related to the deep level defects (450-575 nm). Finally, the current density-voltage (J-V) characteristic of ZnO/SnO{sub 2}/CuO QDs (ZSCI) based heterojunction thin film coated on ITO is also reported.

Prabhu, M.; Soundararajan, N.; Ramachandran, K. [School of Physics, Madurai Kamaraj University, Madurai - 625021 (India); Marikkannan, M.; Mayandi, J. [School of Chemistry, Madurai Kamaraj University, Madurai - 625021 (India)

2014-04-24T23:59:59.000Z

42

Nanoengineered Thin Films for Solid Oxide Fuel Cells  

E-Print Network [OSTI]

Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because of their high energy efficiency, flexible fuel selections and clean energy conversion. To avoid cell cracking and formation of non-conducting compounds...

Su, Qing

2013-11-21T23:59:59.000Z

43

Fluorine compounds for doping conductive oxide thin films  

DOE Patents [OSTI]

Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

Gessert, Tim; Li, Xiaonan; Barnes, Teresa M; Torres, Jr., Robert; Wyse, Carrie L

2013-04-23T23:59:59.000Z

44

Superhydrophobic Metal-Oxide Thin Film Coatings - Energy Innovation Portal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium OxideSuminDeposition of Metal FilmsIndustrial

45

Sputtered Nickel Oxide Thin Film for Efficient Hole Transport Layer in Polymer-Fullerene Bulk-Heterojunction Organic Solar Cell  

SciTech Connect (OSTI)

Bulk-heterojunction (BHJ) organic photovoltaics (OPV) are very promising thin film renewable energy conversion technologies due to low production cost by high-throughput roll-to-roll manufacturing, an expansive list of compatible materials, and flexible device fabrication. An important aspect of OPV device efficiency is good contact engineering. The use of oxide thin films for this application offers increased design flexibility and improved chemical stability. Here we present our investigation of radio frequency magnetron sputtered nickel oxide (NiO{sub x}) deposited from oxide targets as an efficient, easily scalable hole transport layer (HTL) with variable work-function, ranging from 4.8 to 5.8 eV. Differences in HTL work-function were not found to result in statistically significant changes in open circuit voltage (V{sub oc}) for poly(3-hexylthiophene):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (P3HT:PCBM) BHJ device. Ultraviolet photoemission spectroscopy (UPS) characterization of the NiO{sub x} film and its interface with the polymer shows Fermi level alignment of the polymer with the NiO{sub x} film. UPS of the blend also demonstrates Fermi level alignment of the organic active layer with the HTL, consistent with the lack of correlation between V{sub oc} and HTL work-function. Instead, trends in j{sub sc}, V{sub oc}, and thus overall device performance are related to the surface treatment of the HTL prior to active layer deposition through changes in active layer thickness.

Widjonarko, N. E.; Ratcliff, E. L.; Perkins, C. L.; Sigdel, A. K.; Zakutayev, A.; Ndione, P. F.; Gillaspie, D. T.; Ginley, D. S.; Olson, D. C.; Berry, J. J.

2012-03-01T23:59:59.000Z

46

Thin film deposition of barium strontium oxide by rf magnetron sputtering  

SciTech Connect (OSTI)

Barium strontium oxide [(BaSr)O] thin films approximately 1 {mu}m in thickness were deposited on tungsten substrates using rf magnetron sputter deposition for thermionic cathode applications. Three substrate temperatures ranging from 25 to 700 deg. C were used in the deposition processes to create oxide films with different surface morphologies and crystalline structures. The films were characterized with scanning electron microscopy and their surface morphologies were correlated to their thermionic emission properties. The results showed that the surface morphology and crystalline structure of the oxide films strongly affected the emission properties. The oxide film deposited at the lowest substrate temperature of 25 deg. C showed a rough surface and a crystalline structure consisting of nanograins. At higher substrate temperatures, the oxide films exhibited smooth surfaces and close-packed crystalline structures with larger grains. The work function of the oxide films was reduced and the emission current density increased as a result of the increase in the growth temperature. The (BaSr)O film made at 700 deg. C exhibited the lowest work function of 1.57 eV and the largest emission current density of 1.60 A/cm{sup 2} at 1198 K under an electrical field of 0.88 V/{mu}m. The emission current density and the work function of the (BaSr)O thin film cathodes were stable over the testing period of 8 h. Compared to the traditional cathode fabrication process, which involves the coating of carbonates followed by an activation process, rf magnetron sputtering has a greater ability to control the deposition parameters, which makes it a valuable alternative technique to fabricate oxide cathodes.

Liu Yan; Day, Christopher M.; Little, Scott A.; Jin, Feng [Department of Physics and Astronomy, Ball State University, Muncie, Indiana 47306 (United States)

2006-11-15T23:59:59.000Z

47

Co-sputtered Aluminum Doped Zinc Oxide Thin Film as Transparent Anode for Organic Light-emitting Diodes  

E-Print Network [OSTI]

Co-sputtered Aluminum Doped Zinc Oxide Thin Film as Transparent Anode for Organic Light and Technology, Clear Water Bay, Kowloon, Hong Kong, China ABSTRACT Aluminum doped zinc oxide (AZO that MTDATA matches better with AZO than CuPc, which served as hole injection layer. Keywords: Aluminum doped

48

Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors  

SciTech Connect (OSTI)

In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Sze, Simon M. [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China)

2014-04-14T23:59:59.000Z

49

Effect of silver incorporation in phase formation and band gap tuning of tungsten oxide thin films  

SciTech Connect (OSTI)

Silver incorporated tungsten oxide thin films are prepared by RF magnetron sputtering technique. The effect of silver incorporation in micro structure evolution, phase enhancement, band gap tuning and other optical properties are investigated using techniques such as x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, and UV-Visible spectroscopy. Effect of silver addition in phase formation and band gap tuning of tungsten oxide thin films are investigated. It is found that the texturing and phase formation improves with enhancement in silver content. It is also found that as the silver incorporation enhances the thickness of the films increases at the same time the strain in the film decreases. Even without annealing the desired phase can be achieved by doping with silver. A broad band centered at the wavelength 437 nm is observed in the absorption spectra of tungsten oxide films of higher silver incorporation and this can be attributed to surface plasmon resonance of silver atoms present in the tungsten oxide matrix. The transmittance of the films is decreased with increase in silver content which can be due to increase in film thickness, enhancement of scattering, and absorption of light caused by the increase of grain size, surface roughness and porosity of films and enhanced absorption due to surface plasmon resonance of silver. It is found that silver can act as the seed for the growth of tungsten oxide grains and found that the grain size increases with silver content which in turn decreases the band gap of tungsten oxide from 3.14 eV to 2.70 eV.

Jolly Bose, R.; Kumar, R. Vinod; Sudheer, S. K.; Mahadevan Pillai, V. P. [Department of Optoelectronics, University of Kerala, Kariyavattom, Thiruvananthapuram, Kerala 695581 (India); Reddy, V. R.; Ganesan, V. [UGC - DAE Consortium for Scientific Research, Khandwa Road, Indore 452017, Madhyapradesh (India)

2012-12-01T23:59:59.000Z

50

Analysis of indium zinc oxide thin films by laser-induced breakdown spectroscopy  

SciTech Connect (OSTI)

We have performed spectroscopic analysis of the plasma generated by Nd:YAG ({lambda} = 266 nm) laser irradiation of thin indium zinc oxide films with variable In content deposited by combinatorial pulsed laser deposition on glass substrates. The samples were irradiated in 5 x 10{sup 4} Pa argon using laser pulses of 5 ns duration and 10 mJ energy. The plasma emission spectra were recorded with an Echelle spectrometer coupled to a gated detector with different delays with respect to the laser pulse. The relative concentrations of indium and zinc were evaluated by comparing the measured spectra to the spectral radiance computed for a plasma in local thermal equilibrium. Plasma temperature and electron density were deduced from the relative intensities and Stark broadening of spectral lines of atomic zinc. Analyses at different locations on the deposited thin films revealed that the In/(In + Zn) concentration ratio significantly varies over the sample surface, from 0.4 at the borders to about 0.5 in the center of the film. The results demonstrate that laser-induced breakdown spectroscopy allows for precise and fast characterization of thin films with variable composition.

Popescu, A. C. [LP3, CNRS - Universite Aix-Marseille, 163 Ave. de Luminy, Marseille 13288 (France); National Institute for Lasers, Plasma and Radiation Physics, Magurele, Ilfov 077125 (Romania); Beldjilali, S. [LP3, CNRS - Universite Aix-Marseille, 163 Ave. de Luminy, Marseille 13288 (France); LPPMCA, Universite des Sciences et de la Technologie d'Oran, BP 1505 El Mnaouer, Oran (Algeria); Socol, G.; Mihailescu, I. N. [National Institute for Lasers, Plasma and Radiation Physics, Magurele, Ilfov 077125 (Romania); Craciun, V. [National Institute for Lasers, Plasma and Radiation Physics, Magurele, Ilfov 077125 (Romania); MAIC, University of Florida, Gainesville, FL 32611 (United States); Hermann, J. [LP3, CNRS - Universite Aix-Marseille, 163 Ave. de Luminy, Marseille 13288 (France)

2011-10-15T23:59:59.000Z

51

Indium doped zinc oxide nanowire thin films for antireflection and solar absorber coating applications  

SciTech Connect (OSTI)

Indium doped ZnO nanowire thin films were prepared by thermal oxidation of Zn-In metal bilayer films at 500°C. The ZnO:In nanowires are 20-100 nm in diameter and several tens of microns long. X-ray diffraction patterns confirm the formation of oxide and indicate that the films are polycrystalline, both in the as deposited and annealed states. The transmission which is <2% for the as deposited Zn-In films increases to >90% for the ZnO:In nanowire films. Significantly, the reflectance for the as deposited films is < 10% in the region between 200 to 1500 nm and < 2% for the nanowire films. Thus, the as deposited films can be used solar absorber coatings while the nanowire films are useful for antireflection applications. The growth of nanowires by this technique is attractive since it does not involve very high temperatures and the use of catalysts.

Shaik, Ummar Pasha [ACRHEM, University of Hyderabad, Hyderabad-500046 (India); Krishna, M. Ghanashyam, E-mail: mgksp@uohyd.ac.in [ACRHEM and School of Physics, University of Hyderabad, Hyderabad-500046 (India)

2014-04-24T23:59:59.000Z

52

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components  

SciTech Connect (OSTI)

There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.

Subramanyam, Guru, E-mail: gsubramanyam1@udayton.edu [Department of Electrical and Computer Engineering, University of Dayton, Dayton, Ohio 45469 (United States); Cole, M. W., E-mail: melanie.w.cole.civ@mail.mil [U.S. Army Research Laboratory, Weapons and Materials Research Directorate, Aberdeen Proving Ground, Maryland 21005 (United States); Sun, Nian X. [Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States); Kalkur, Thottam S. [Department of Electrical and Computer Engineering, University of Colorado, Colorado Springs, Colorado 80918 (United States); Sbrockey, Nick M.; Tompa, Gary S. [Structured Materials Industries, Inc., Piscataway, New Jersey 08854 (United States); Guo, Xiaomei [Boston Applied Technologies, Inc., Woburn, Massachusetts 01801 (United States); Chen, Chonglin [Department of Physics and Astronomy, University of Texas, San Antonio, Texas 78249 (United States); Alpay, S. P.; Rossetti, G. A. [Institute of Materials Science and Materials Science and Engineering Program, University of Connecticut, Storrs, Connecticut 06269 (United States); Dayal, Kaushik [Mechanics, Materials and Computing, Civil and Environmental Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Chen, Long-Qing [Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802 (United States); Schlom, Darrell G. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States); Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States)

2013-11-21T23:59:59.000Z

53

Fatigue failure in thin-film polysilicon is due to subcriticalcracking within the oxide layer  

SciTech Connect (OSTI)

It has been established that microelectromechanical systems (MEMS) created from polycrystalline silicon thin-films are subject to cyclic fatigue. Prior work by the authors has suggested that although bulk silicon is not susceptible to fatigue failure in ambient air, fatigue in micron-scale silicon is a result of a ''reaction-layer'' process, whereby high stresses induce a thickening of the post-release oxide at stress concentrations such as notches, which subsequently undergoes moisture-assisted cracking. However, there exists some controversy regarding the post-release oxide thickness of the samples used in the prior study. In this Letter, we present data from devices from a more recent fabrication run that confirm our prior observations. Additionally, new data from tests in high vacuum show that these devices do not fatigue when oxidation and moisture are suppressed. Each of these observations lends credence to the '''reaction-layer'' mechanism. Recent advances in the design of microelectromechanical systems (MEMS) have increased the demand for more reliable microscale structures. Although silicon is an effective and widely used structural material at the microscale, it is very brittle. Consequently, reliability is a limiting factor for commercial and defense applications. Since the surface to volume ratio of these structural films is very large, classical models for failure modes in bulk materials cannot always be applied. For example, whereas bulk silicon is immune to cyclic fatigue failure thin micron-scale structural films of silicon appear to be highly susceptible. It is clear that at these size scales, surface effects may become dominant in controlling mechanical properties. The main reliability issues for MEMS are stiction, fatigue and wear. Fatigue is important in cases where devices are subjected to a large number of loading cycles with amplitudes below their (single-cycle) fracture stress, which may arise due to vibrations intentionally induced in the structure (i.e. a resonator) or those which arise from the service environment. While the reliability of MEMS has received extensive attention, the physical mechanisms responsible for these failure modes have yet to be conclusively determined. This is particularly true for fatigue, where the mechanisms have been subject to intense debate. Recently we have proposed that the fatigue of micron-scale polysilicon is associated with stress-induced surface oxide thickening and moisture-assisted subcritical cracking in the amorphous SiO{sub 2} oxide layer (''reaction-layer'' fatigue). The mechanism of oxide thickening is as yet unknown, but is likely related to some form of stress-assisted diffusion. Allameh et al. suggest a complementary mechanism involving stress-assisted oxide thickening, caused by dissolution of the surface oxide which forms deep grooves that are sites for crack initiation. Kahn et al. have criticized these mechanisms and proposed that, instead, fatigue is caused by subcritical cracking due to contacting surface asperities in the compressive part of the cycle. To the authors' knowledge, there is no direct experimental observation of such asperity contact. Also, their model cannot explain why micron-scale silicon, and not bulk silicon, is susceptible to fatigue. Moreover, Kahn et al. do not acknowledge the role of stress-induced oxide thickening, which has been observed directly using TEM and indirectly using atomic-force microscope measurements by several investigators, and have questioned whether the materials utilized by Muhlstein et al. and Allameh et al. were representative due to the relatively thick oxide scales. Accordingly, the goal of the present research is to seek a definitive understanding of the physical mechanisms responsible for fatigue in polysilicon structural thin-films. Our approach is to combine on-chip testing methods with electron microscopy by fatiguing thin-film samples and observing them, in an unthinned condition, using high-voltage transmission electron microscopy (HVTEM). Two principal results are found from this work: (1

Alsem, D.H.; Muhlstein, C.L.; Stach, E.A.; Ritchie, R.O.

2005-01-11T23:59:59.000Z

54

Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems  

SciTech Connect (OSTI)

The Al{sub 2}O{sub 3}/GaAs and HfO{sub 2}/GaAs interfaces after atomic layer deposition are studied using in situ monochromatic x-ray photoelectron spectroscopy. Samples are deliberately exposed to atmospheric conditions and interfacial oxide re-growth is observed. The extent of this re-growth is found to depend on the dielectric material and the exposure temperature. Comparisons with previous studies show that ex situ characterization can result in misleading conclusions about the interface reactions occurring during the metal oxide deposition process.

McDonnell, S.; Dong, H.; Hawkins, J. M.; Brennan, B.; Milojevic, M.; Aguirre-Tostado, F. S.; Zhernokletov, D. M.; Hinkle, C. L.; Kim, J.; Wallace, R. M.

2012-04-02T23:59:59.000Z

55

High temperature thermoelectric characterization of III-V semiconductor thin films by oxide bonding  

E-Print Network [OSTI]

-W-N diffusion barrier. A thermoelectric material, thin film ErAs:InGaAlAs metal/semiconductor nanocomposite temperature to 840 K for this material and the results show the thermoelectric power factor multiplied material characterization of semiconductor thin films for thermoelectric power generation, photovoltaic

Bowers, John

56

High-Temperature Thermoelectric Characterization of IIIV Semiconductor Thin Films by Oxide Bonding  

E-Print Network [OSTI]

-temperature thermoelectric charac- terization of thin-film III­V semiconductor materials that suffer from the side- effect-temperature surface passivation, and metallization with a Ti-W-N diffusion barrier. A thermoelectric material, thin-temperature material characterization of semiconductor thin films for thermoelectric power generation, photovoltaic

57

Oxidation behavior of arc evaporated Al-Cr-Si-N thin films  

SciTech Connect (OSTI)

The impact of Al and Si on the oxidation behavior of Al-Cr-(Si)-N thin films synthesized by arc evaporation of powder metallurgically prepared Al{sub x}Cr{sub 1-x} targets with x = Al/(Al + Cr) of 0.5, 0.6, and 0.7 and (Al{sub 0.5}Cr{sub 0.5}){sub 1-z}Si{sub z} targets with Si contents of z = 0.05, 0.1, and 0.2 in N{sub 2} atmosphere was studied in detail by means of differential scanning calorimetry, thermogravimetric analysis (TGA), x-ray diffraction, and Raman spectroscopy. Dynamical measurements in synthetic air (up to 1440 Degree-Sign C) revealed the highest onset temperature of pronounced oxidation for nitride coatings prepared from the Al{sub 0.4}Cr{sub 0.4}Si{sub 0.2} target. Isothermal TGA at 1100, 1200, 1250, and 1300 Degree-Sign C highlight the pronounced improvement of the oxidation resistance of Al{sub x}Cr{sub 1-x}N coatings by the addition of Si. The results show that Si promotes the formation of a dense coating morphology as well as a dense oxide scale when exposed to air.

Tritremmel, Christian; Daniel, Rostislav; Mitterer, Christian; Mayrhofer, Paul H.; Lechthaler, Markus; Polcik, Peter [Christian Doppler Laboratory for Advanced Hard Coatings, Department of Physical Metallurgy and Materials Testing, Montanuniversitaet Leoben, Franz-Josef-Strasse 18, A-8700 Leoben (Austria); Christian Doppler Laboratory for Application Oriented Coating Development, Department of Physical Metallurgy and Materials Testing, Montanuniversitaet Leoben, Franz-Josef-Strasse 18, A-8700 Leoben (Austria); OC Oerlikon Balzers AG, Iramali 18, LI-9496 Balzers (Liechtenstein); PLANSEE Composite Materials GmbH, Siebenbuergerstrasse 23, D-86983 Lechbruck am See (Germany)

2012-11-15T23:59:59.000Z

58

Ferromagnetism in Doped Thin-Film Oxide and Nitride Semiconductors and Dielectrics  

SciTech Connect (OSTI)

The principal goal in the field of high-Tc ferromagnetic semiconductors is the synthesis, characterization and utilization of semiconductors which exhibit substantial carrier spin polarization at and above room temperature. Such materials are of critical importance in the emerging field of semiconductor spintronics. The interaction leading to carrier spin polarization, exchange coupling between the dopant spins and the valence or conduction band, is known to be sufficiently weak in conventional semiconductors, such as GaAs and Si, that magnetic ordering above cryogenic temperatures is essentially impossible. Since the provocative theoretical predictions of Tc above ambient in p-Mn:ZnO and p-Mn:GaN (T. Dietl et al., Science 287 1019 (2000)), and the observation of room-temperature ferromagnetism in Co:TiO2 anatase (Y. Matsumoto et al., Science 291 854 (2001)), there has been a flurry of work in oxides and nitrides doped with transition metals with unpaired d electrons. It has even been claimed that room-temperature ferromagnetism can be obtained in certain d0 transition metals oxides without a dopant. In this Report, the field of transition metal doped oxides and nitrides is critically reviewed and assessed from a materials science perspective. Since much of the field centers around thin film growth, this Report focuses on films prepared not only by conventional vacuum deposition methods, but also by spin coating colloidal nanoparticles.

Chambers, Scott A.

2006-10-01T23:59:59.000Z

59

TAPE CALENDERING MANUFACTURING PROCESS FOR MULTILAYER THIN-FILM SOLID OXIDE FUEL CELLS  

SciTech Connect (OSTI)

This report summarizes the work performed by Hybrid Power Generation Systems, LLC during the Phases I and II under Contract DE-AC26-00NT40705 for the U. S. Department of Energy, National Energy Technology Laboratory (DOE/NETL) entitled ''Tape Calendering Manufacturing Process For Multilayer Thin-Film Solid Oxide Fuel Cells''. The main objective of this project was to develop the manufacturing process based on tape calendering for multilayer solid oxide fuel cells (SOFC's) using the unitized cell design concept and to demonstrate cell performance under specified operating conditions. Summarized in this report is the development and improvements to multilayer SOFC cells and the unitized cell design. Improvements to the multilayer SOFC cell were made in electrochemical performance, in both the anode and cathode, with cells demonstrating power densities of nearly 0.9 W/cm{sup 2} for 650 C operation and other cell configurations showing greater than 1.0 W/cm{sup 2} at 75% fuel utilization and 800 C. The unitized cell design was matured through design, analysis and development testing to a point that cell operation at greater than 70% fuel utilization was demonstrated at 800 C. The manufacturing process for both the multilayer cell and unitized cell design were assessed and refined, process maps were developed, forming approaches explored, and nondestructive evaluation (NDE) techniques examined.

Nguyen Minh; Kurt Montgomery

2004-10-01T23:59:59.000Z

60

Thin film ion conducting coating  

DOE Patents [OSTI]

Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

Goldner, Ronald B. (Lexington, MA); Haas, Terry (Sudbury, MA); Wong, Kwok-Keung (Watertown, MA); Seward, George (Arlington, MA)

1989-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Anti-reflection zinc oxide nanocones for higher efficiency thin-film silicon solar cells  

E-Print Network [OSTI]

Thin film silicon solar cells, which are commonly made from microcrystalline silicon ([mu]c-Si) or amorphous silicon (a-Si), have been considered inexpensive alternatives to thick polycrystalline silicon (polysilicon) solar ...

Mailoa, Jonathan P

2012-01-01T23:59:59.000Z

62

Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer  

E-Print Network [OSTI]

Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric current gain obtained...

Lu, Tianlin

2012-07-16T23:59:59.000Z

63

Oxide Heterogrowth on Ion-exfoliated Thin-film Complex Oxide Substrates  

SciTech Connect (OSTI)

Fabrication of a bilayer HfO{sub 2}/single-crystal LiNbO{sub 3} film is demonstrated using deep high-energy He{sup +} implantation in a LiNbO{sub 3} wafer, followed by HfO{sub 2} atomic layer deposition, and, then, selective etching exfoliation from the bulk LiNbO{sub 3} crystal. The properties and morphology of these exfoliated bilayer films are characterized using a set of thin-film probes. Pre-exfoliation film patterning and one model application, in surface-refractive-index tuning of guided waves in a free-standing LiNbO{sub 3} film, are also demonstrated.

Gang, O.; Chen, T.-L.; Kou, A.; Ofan, A.; Gaathon, O.; Osgood Jr., R.M.; Vanamurthy, L.; Bakhru, S.; Bakhru, H.

2009-11-02T23:59:59.000Z

64

PREFERENTIAL OXIDATION OF CARBON MONOXIDE IN A THIN-FILM CATALYTIC MICROREACTOR: ADVANTAGES AND LIMITATIONS  

E-Print Network [OSTI]

-PBR's favor the reverse water-gas-shift (r-WGS) reaction, thus causing a much narrower range of permissible stream after hydrocarbon fuel reforming and water-gas-shift reactions. This process, referred to as CO;2 ABSTRACT Silicon microreactors with thin-film wall catalyst were adopted for kinetic studies of CO

Besser, Ronald S.

65

Magnetism at spinel thin film interfaces probed through soft x-ray spectroscopy techniques  

E-Print Network [OSTI]

Magnetism at spinel thin ?lm interfaces probed through softachievable in bulk form. Magnetism at the interface regionand the origin of the magnetism from multiple magnetic

Chopdekar, R.V.

2010-01-01T23:59:59.000Z

66

Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique  

SciTech Connect (OSTI)

In this work, the preparation of In{sub 2}O{sub 3}-ZnO thin films by electron beam evaporation technique on glass substrates is reported. Optical and electrical properties of these films were investigated. The effect of dopant amount and annealing temperature on the optical and electrical properties of In{sub 2}O{sub 3}-ZnO thin films was also studied. Different amount of ZnO was used as dopant and the films were annealed at different temperature. The results showed that the most crystalline, transparent and uniform films with lowest resistivity were obtained using 25 wt% of ZnO annealed at 500 {sup o}C.

Keshavarzi, Reza [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Mirkhani, Valiollah, E-mail: mirkhani@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Moghadam, Majid, E-mail: moghadamm@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of) [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Department of Nanotechnology Engineering, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Tangestaninejad, Shahram; Mohammadpoor-Baltork, Iraj [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Fallah, Hamid Reza; Dastjerdi, Mohammad Javad Vahid; Modayemzadeh, Hamed Reza [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)

2011-04-15T23:59:59.000Z

67

Biomimetic thin film deposition  

SciTech Connect (OSTI)

Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

1995-09-01T23:59:59.000Z

68

Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10?nm devices  

SciTech Connect (OSTI)

Three-dimensional (3D) topological insulators (TI) are a new state of quantum matter in which surface states reside in the bulk insulating energy bandgap and are protected by time-reversal symmetry. It is possible to create an energy bandgap as a consequence of the interaction between the conduction band and valence band surface states from the opposite surfaces of a TI thin film, and the width of the bandgap can be controlled by the thin film thickness. The formation of an energy bandgap raises the possibility of thin-film TI-based metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this paper, we explore the performance of MOSFETs based on thin film 3D-TI structures by employing quantum ballistic transport simulations using the effective continuous Hamiltonian with fitting parameters extracted from ab-initio calculations. We demonstrate that thin film transistors based on a 3D-TI structure provide similar electrical characteristics compared to a Si-MOSFET for gate lengths down to 10?nm. Thus, such a device can be a potential candidate to replace Si-based MOSFETs in the sub-10?nm regime.

Akhavan, N. D., E-mail: nima.dehdashti@uwa.edu.au; Jolley, G.; Umana-Membreno, G. A.; Antoszewski, J.; Faraone, L. [Department of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley, WA 6009 (Australia)

2014-08-28T23:59:59.000Z

69

Apparatus and method for characterizing thin film and interfaces using an optical heat generator and detector  

DOE Patents [OSTI]

An optical heat generation and detection system generates a first non-destructive pulsed beam of electromagnetic radiation that is directed upon a sample containing at least one interface between similar or dissimilar materials. The first pulsed beam of electromagnetic radiation, a pump beam (21a), produces a non-uniform temperature change within the sample. A second non-destructive pulsed beam of electromagnetic radiation, a probe beam (21b), is also directed upon the sample. Physical and chemical properties of the materials, and of the interface, are measured by observing changes in a transient optical response of the sample to the probe beam, as revealed by a time dependence of changes in, by example, beam intensity, direction, or state of polarization. The system has increased sensitivity to interfacial properties including defects, contaminants, chemical reactions and delaminations, as compared to conventional non-destructive, non-contact techniques. One feature of this invention is a determination of a Kapitza resistance at the interface, and the correlation of the determined Kapitza resistance with a characteristic of the interface, such as roughness, delamination, the presence of contaminants, etc.

Maris, Humphrey J (Barrington, RI); Stoner, Robert J (Duxbury, MA)

1998-01-01T23:59:59.000Z

70

Interfaces and Free Boundaries, 4 : 2002, 7188 A TOTALVARIATION SURFACE ENERGY MODEL FOR THIN FILMS OF  

E-Print Network [OSTI]

Interfaces and Free Boundaries, 4 : 2002, 71­88 A TOTAL­VARIATION SURFACE ENERGY MODEL FOR THIN to model the energy on surfaces separating regions of di#erent variants. We find that the deformation energy modeled by # ## h |# 2 u| 2 dx, where # is a small positive strain­gradient coe#cient,# h

Luskin, Mitchell

71

X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films  

SciTech Connect (OSTI)

We investigate the correlation between the atomic structures of amorphous zinc-tin-oxide (a-ZTO) thin films grown by atomic layer deposition (ALD) and their electronic transport properties. We perform synchrotron-based X-ray absorption spectroscopy at the K-edges of Zn and Sn with varying [Zn]/[Sn] compositions in a-ZTO thin films. In extended X-ray absorption fine structure (EXAFS) measurements, signal attenuation from higher-order shells confirms the amorphous structure of a-ZTO thin films. Both quantitative EXAFS modeling and X-ray absorption near edge spectroscopy (XANES) reveal that structural disorder around Zn atoms increases with increasing [Sn]. Field- and Hall-effect mobilities are observed to decrease with increasing structural disorder around Zn atoms, suggesting that the degradation in electron mobility may be correlated with structural changes.

Siah, Sin Cheng, E-mail: siahsincheng@gmail.com, E-mail: buonassisi@mit.edu; Lee, Yun Seog; Buonassisi, Tonio, E-mail: siahsincheng@gmail.com, E-mail: buonassisi@mit.edu [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Lee, Sang Woon; Gordon, Roy G. [Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138 (United States); Heo, Jaeyeong [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Shibata, Tomohiro; Segre, Carlo U. [Physics Department and CSRRI, Illinois Institute of Technology, Chicago, Illinois 606016 (United States)

2014-06-16T23:59:59.000Z

72

Dopant Ion Size and Electronic Structure Effects on Transparent Conducting Oxides. Sc-Doped CdO Thin Films  

E-Print Network [OSTI]

-doped CdO (CSO) thin films have been grown on both amorphous glass and single-crystal MgO(100) substrates metallic conductivities, and relatively simple crystal structures.2,4-7 Sn doping of CdO thin films grown with the highest carrier mobilities grown to date.7 In addition, Cd2SnO4, CdIn2O4, and CdO-ZnO thin films have been

Medvedeva, Julia E.

73

MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS  

SciTech Connect (OSTI)

This document summarizes the technical progress from September 2002 to March 2003 for the program, Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells, contract number DE-AC26-00NT40711. The causes have been identified for the unstable open circuit voltage (OCV) and low performance exhibited by the anode-supported lanthanum gallate based cells from the earlier development. Promising results have been obtained in the area of synthesis of electrolyte and cathode powders, which showed excellent sintering and densification at low temperatures. The fabrication of cells using tapecalendering process for anode-supported thin lanthanum gallate electrolyte cells and their performance optimization is in progress.

Jie Guan; Atul Verma; Nguyen Minh

2003-04-01T23:59:59.000Z

74

Enhanced stability against bias-stress of metal-oxide thin film transistors deposited at elevated temperatures  

SciTech Connect (OSTI)

Transparent zinc-tin-oxide (ZTO) thin film transistors (TFTs) have been prepared by DC magnetron sputtering. Compared to reference devices with a channel deposited at room temperature and subsequently annealing at 400 deg. C, a substantially enhanced stability against bias stress is evidenced for devices with in-situ substrate heating during deposition (400 deg. C). A reduced density of sub-gap defect states in TFT channels prepared with in-situ substrate heating is found. Concomitantly, a reduced sensitivity to the adsorption of ambient gases is evidenced for the in-situ heated devices. This finding is of particular importance for an application as driver electronics for organic light emitting diode displays.

Fakhri, M.; Goerrn, P.; Riedl, T. [Institute of Electronic Devices, University of Wuppertal, Rainer-Gruenter-St. 21, 42119 Wuppertal (Germany); Weimann, T.; Hinze, P. [Physikalisch-Technische Bundesanstalt Braunschweig, Bundesallee 100, 38116 Braunschweig (Germany)

2011-09-19T23:59:59.000Z

75

Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties  

SciTech Connect (OSTI)

Thin film capacitors were fabricated by sputtering TiN-Y doped HfO{sub 2}-TiN stacks on silicon substrates. Yttrium was incorporated into the HfO{sub 2} layers by simultaneously sputtering from Y{sub 2}O{sub 3} and HfO{sub 2} sources. Electric polarization and relative permittivity measurements yield distinct ferroelectric properties as a result of low yttrium dopant concentrations in the range of 0.9-1.9 mol. %. Grazing incidence x-ray diffraction measurements show the formation of an orthorhombic phase in this range. Compared to atomic layer deposition films, the highest remanent polarization and the highest relative permittivity were obtained at significantly lower doping concentrations in these sputtered films.

Olsen, T. [NaMLab gGmbH, 01187 Dresden (Germany); Department of Electrical and Computer Engineering, University of Alberta, Edmonton T6G 2V4 (Canada); Schroeder, U.; Mueller, S.; Krause, A.; Martin, D.; Singh, A. [NaMLab gGmbH, 01187 Dresden (Germany); Mueller, J. [Fraunhofer CNT, 01099 Dresden (Germany); Geidel, M. [Institute of Semiconductors and Microsystems, Technische Universitaet Dresden, 01062 Dresden (Germany); Mikolajick, T. [NaMLab gGmbH, 01187 Dresden (Germany); Institute of Semiconductors and Microsystems, Technische Universitaet Dresden, 01062 Dresden (Germany)

2012-08-20T23:59:59.000Z

76

Fabricating superconducting interfaces between artificially grown LaAlO{sub 3} and SrTiO{sub 3} thin films  

SciTech Connect (OSTI)

Realization of a fully metallic two-dimensional electron gas (2DEG) at the interface between artificially grown LaAlO{sub 3} and SrTiO{sub 3} thin films has been an exciting challenge. Here we present for the first time the successful realization of a superconducting 2DEG at interfaces between artificially grown LaAlO{sub 3} and SrTiO{sub 3} thin films. Our results highlight the importance of two factors—the growth temperature and the SrTiO{sub 3} termination. We use local friction force microscopy and transport measurements to determine that in normal growth conditions the absence of a robust metallic state at low temperature in the artificially grown LaAlO{sub 3}/SrTiO{sub 3} interface is due to the nanoscale SrO segregation occurring on the SrTiO{sub 3} film surface during the growth and the associated defects in the SrTiO{sub 3} film. By adopting an extremely high SrTiO{sub 3} growth temperature, we demonstrate a way to realize metallic, down to the lowest temperature, and superconducting 2DEG at interfaces between LaAlO{sub 3} layers and artificially grown SrTiO{sub 3} thin films. This study paves the way to the realization of functional LaAlO{sub 3}/SrTiO{sub 3} superlattices and/or artificial LaAlO{sub 3}/SrTiO{sub 3} interfaces on other substrates.

Li, Danfeng, E-mail: Danfeng.Li@unige.ch; Gariglio, Stefano; Cancellieri, Claudia; Fête, Alexandre; Stornaiuolo, Daniela; Triscone, Jean-Marc [DPMC, University of Geneva, 24 Quai Ernest Ansermet, 1211 Geneva (Switzerland)

2014-01-01T23:59:59.000Z

77

The effect of Ta interface on the crystallization of amorphous phase change material thin films  

SciTech Connect (OSTI)

The crystallization of amorphous GeTe and Ge{sub 2}Sb{sub 2}Te{sub 5} phase change material films, with thickness between 10 and 100?nm, sandwiched between either Ta or SiO{sub 2} layers, was investigated by optical reflectivity. Ta cladding layers were found to increase the crystallization temperature, even for films as thick as 100?nm. X-Ray diffraction investigations of crystallized GeTe films showed a very weak texture in Ta cladded films, in contrast with the strong texture observed for SiO{sub 2} cladding layers. This study shows that crystallization mechanism of phase change materials can be highly impacted by interface effects, even for relatively thick films.

Ghezzi, G. E. [CEA-LETI, MINATEC campus, 17 rue des Martyrs, F 38054 Grenoble (France); LMGP, CNRS Grenoble-INP, MINATEC, 3 parvis Louis Néel, F 38016 Grenoble (France); Noé, P., E-mail: pierre.noe@cea.fr; Marra, M.; Sabbione, C.; Fillot, F.; Bernier, N.; Ferrand, J.; Maîtrejean, S. [CEA-LETI, MINATEC campus, 17 rue des Martyrs, F 38054 Grenoble (France); Hippert, F. [LMGP, CNRS Grenoble-INP, MINATEC, 3 parvis Louis Néel, F 38016 Grenoble (France); LNCMI (CNRS, UJF, UPS, INSA), 25 rue des Martyrs, F 38042 Grenoble Cedex 9 (France)

2014-06-02T23:59:59.000Z

78

Thin film photovoltaic device  

DOE Patents [OSTI]

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

Catalano, A.W.; Bhushan, M.

1982-08-03T23:59:59.000Z

79

Thin film photovoltaic device  

DOE Patents [OSTI]

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

Catalano, Anthony W. (Wilmington, DE); Bhushan, Manjul (Wilmington, DE)

1982-01-01T23:59:59.000Z

80

Lithium intercalation in sputter deposited antimony-doped tin oxide thin films: Evidence from electrochemical and optical measurements  

SciTech Connect (OSTI)

Transparent conducting oxides are used as transparent electrical contacts in a variety of applications, including in electrochromic smart windows. In the present work, we performed a study of transparent conducting antimony-doped tin oxide (ATO) thin films by chronopotentiometry in a Li{sup +}-containing electrolyte. The open circuit potential vs. Li was used to investigate ATO band lineups, such as those of the Fermi level and the ionization potential, as well as the dependence of these lineups on the preparation conditions for ATO. Evidence was found for Li{sup +} intercalation when a current pulse was set in a way so as to drive ions from the electrolyte into the ATO lattice. Galvanostatic intermittent titration was then applied to determine the lithium diffusion coefficient within the ATO lattice. The electrochemical density of states of the conducting oxide was studied by means of the transient voltage recorded during the chronopotentiometry experiments. These measurements were possible because, as Li{sup +} intercalation took place, charge compensating electrons filled the lowest part of the conduction band in ATO. Furthermore, the charge insertion modified the optical properties of ATO according to the Drude model.

Montero, J., E-mail: jose.montero@angstrom.uu.se; Granqvist, C. G.; Niklasson, G. A. [Department of Engineering Sciences, The A°ngström Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala (Sweden); Guillén, C.; Herrero, J. [Department of Energy, Ciemat, Avda. Complutense 40, Ed. 42, E-28040 Madrid (Spain)

2014-04-21T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Growth, microstructure and electrical properties of sputter-deposited hafnium oxide (HfO2) thin films grown using HfO2 ceramic target  

SciTech Connect (OSTI)

Hafnium oxide (HfO?) thin films have been made by radio-frequency (rf) magnetron-sputtering onto Si(100) substrates under varying growth temperature (Ts). HfO? ceramic target has been employed for sputtering while varying the Ts from room temperature to 500?C during deposition. The effect of Ts on the growth and microstructure of deposited HfO? films has been studied using grazing incidence x-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), and high-resolution scanning electron microscopy (HR-SEM) coupled with energy dispersive x-ray spectrometry (EDS). The results indicate that the effect of Ts is significant on the growth, surface and interface structure, morphology and chemical composition of the HfO? films. Structural characterization indicates that the HfO? films grown at Ts<200 ?C are amorphous while films grown at Ts>200 ?C are nanocrystalline. An amorphous-to-crystalline transition occurs at Ts=200 ?C. Nanocrystalline HfO? films crystallized in a monoclinic structure with a (-111) orientation. XPS measurements indicated the high surface-chemical quality and stoichiometric nature of the grown HfO? films. An interface layer (IL) formation occurs due to reaction at the HfO?-Si interface for HfO? films deposited at Ts>200 ?C. The thickness of IL increases with increasing Ts. XPS and EDS at the HfO?-Si cross-section indicate the IL is a (Hf, Si)-O compound. The electrical characterization using capacitance-voltage measurements indicate that the dielectric constant decreases from 25 to 16 with increasing Ts.

Aguirre, B.; Vemuri, R. S.; Zubia, David; Engelhard, Mark H.; Shutthanandan, V.; Kamala Bharathi, K.; Ramana, Chintalapalle V.

2011-01-01T23:59:59.000Z

82

Structural and chemical investigations of CBD-and PVD-CdS buffer layers and interfaces in Cu(In,Ga)Se2-based thin film solar cells  

E-Print Network [OSTI]

(In,Ga)Se2-based thin film solar cells D. Abou-Rasa,b,*, G. Kostorza , A. Romeob,1 , D. Rudmannb , A Available online 8 December 2004 Abstract It is known that high-efficiency thin film solar cells based on Cu; Chemical bath deposition; CdS buffer 1. Introduction The highest efficiencies for thin film solar cells

Romeo, Alessandro

83

Fundamental studies of heterostructured oxide thin film electrocatalysts for oxygen reduction at high temperatures  

E-Print Network [OSTI]

Searching for active and cost-effective catalysts for oxygen electrocatalysis is essential for the development of efficient clean electrochemical energy technologies. Perovskite oxides are active for surface oxygen exchange ...

Crumlin, Ethan J

2012-01-01T23:59:59.000Z

84

Indium-Vanadium Oxides Deposited by Radio Frequency Sputtering: New Thin Film Transparent  

E-Print Network [OSTI]

in many works, metal/vanadium mixed oxides have favorable properties when used as charge storage, 144 (No. 12), 4099. (2) Opara Krasovec, U.; Orel, B.; Reisfeld, R. Electrochem. Solid- State Let

Artuso, Florinda

85

Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in. beta. -SiC thin films  

SciTech Connect (OSTI)

Both inversion- and depletion-mode n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated on ..beta..-SiC thin films grown by chemical-vapor deposition. The inversion-mode devices were made on in situ doped (Al) p-type ..beta..-SiC(100) thin films grown on Si(100) substrates. The depletion-mode MOSFETs were made on n-type ..beta..-SiC(111) thin films grown on the Si(0001) face of a 6H ..cap alpha..-SiC substrates. Stable saturation and low subthreshold currents were achieved at drain-source voltages exceeding 5 and 25 V for the inversion-mode and depletion-mode devices, respectively. The transconductance increased with temperature up to 673 K for the short-gate-length devices, of either mode, and then decreased with further increases in temperature. It is proposed that the transconductances and threshold voltages for the inversion-mode devices are greatly affected by minority-carrier injection from the source. Stable transistor action was observed for both types of devices at temperatures up to 823 K, with the depletion-mode devices operating very well up to 923 K.

Palmour, J.W.; Kong, H.S.; Davis, R.F.

1988-08-15T23:59:59.000Z

86

Investigation of zinc oxide doped with metal impurities for use as thin film conductive phosphors  

E-Print Network [OSTI]

of a viable flat panel display, low voltage, conductive phosphors which emit blue, red, and green light will be required for the field emission technology. This thesis examines zinc oxide (ZnO) based thin ( ) phosphors for such an application. ZnO is a...

Evatt, Steven R.

1994-01-01T23:59:59.000Z

87

Processing and Characterization of P-Type Doped Zinc Oxide Thin Films  

E-Print Network [OSTI]

Applications of zinc oxide (ZnO) for optoelectronic devices, including light emitting diodes, semiconductor lasers, and solar cells have not yet been realized due to the lack of high-quality p-type ZnO. In the research presented herein, pulsed laser...

Myers, Michelle Anne

2013-03-18T23:59:59.000Z

88

Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films  

SciTech Connect (OSTI)

Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50?°C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

Morales-Masis, M., E-mail: monica.moralesmasis@epfl.ch; Ding, L.; Dauzou, F. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Jeangros, Q. [Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Hessler-Wyser, A. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Nicolay, S. [Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland); Ballif, C. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland)

2014-09-01T23:59:59.000Z

89

Formation of thin film Tl-based high-Tc? superconducting oxides from amorphous alloy precursors  

E-Print Network [OSTI]

the size of the A-cation relative to the B-cation leads to the shifting of the B and X ious. Compensating, the perovskite may then twist or lean to one side and may exhibit piezoelectric behavior or become electrically polarized, Other stoichiometric... anisotropic behavior of the supercurrent flow. Unfortunately this unwelcome anisotropic behavior is a common feature in the copper oxide superconductors. Because of the anisotropy in supercurrent flow, the crystal orientation becomes extremely important...

Williams, John Charles

1991-01-01T23:59:59.000Z

90

Strain induced electronic structure changes in magnetic transition metal oxides thin films  

SciTech Connect (OSTI)

We show that the angular dependence of x-ray magnetic circular dichroism (XMCD) is strongly sensitive to strain-induced electronic structure changes in magnetic transition metal oxides. We observe a pronounced dependence of the XMCD spectral shape on the experimental geometry as well as nonvanishing XMCD with distinct spectral features in transverse geometry in compressively strained MnCr{sub 2}O{sub 4} films. The angular dependent XMCD can be described as a sum over an isotropic and anisotropic contribution, the latter linearly proportional to the axial distortion due to strain. The XMCD spectra are well reproduced by atomic multiplet calculations.

van der Laan, G.; Chopdekar, R.V.; Suzuki, Y.; Arenholz, E.

2010-07-08T23:59:59.000Z

91

Iron Oxide-Gold Core-Shell Nanoparticles and Thin-Film Assembly. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFunInfrared LandResponsesIon/Surface Reactions andOctoberOxide Waste Form

92

ATOMIC LAYER DEPOSITION OF TITANIUM OXIDE THIN FILMS ONNANOPOROUS ALUMINA TEMPLATES FOR MEDICAL APPLICATIONS  

SciTech Connect (OSTI)

Nanostructured materials may play a significant role in controlled release of pharmacologic agents for treatment of cancer. Many nanoporous polymer materials are inadequate for use in drug delivery. Nanoporous alumina provides several advantages over other materials for use in controlled drug delivery and other medical applications. Atomic layer deposition was used to coat all the surfaces of the nanoporous alumina membrane in order to reduce the pore size in a controlled manner. Both the 20 nm and 100 nm titanium oxide-coated nanoporous alumina membranes did not exhibit statistically lower viability compared to the uncoated nanoporous alumina membrane control materials. In addition, 20 nm pore size titanium oxide-coated nanoporous alumina membranes exposed to ultraviolet light demonstrated activity against Escherichia coli and Staphylococcus aureus bacteria. Nanostructured materials prepared using atomic layer deposition may be useful for delivering a pharmacologic agent at a precise rate to a specific location in the body. These materials may serve as the basis for 'smart' drug delivery devices, orthopedic implants, or self-sterilizing medical devices.

Brigmon, R.

2009-05-05T23:59:59.000Z

93

pH-Dependent Electron Transfer from Re-bipyridyl Complexes to Metal Oxide Nanocrystalline Thin Films  

E-Print Network [OSTI]

to a dye-sensitized solar cell, in which the rates of charge injection from a molecular excited state-CH2COOH] sensitized TiO2 and ReC1P sensitized SnO2 nanocrystalline thin films using femtosecond

94

Tailoring the index of refraction of nanocrystalline hafnium oxide thin films  

SciTech Connect (OSTI)

Hafnium oxide (HfO{sub 2}) films were grown by sputter-deposition by varying the growth temperature (T{sub s}?=?25–700?°C). HfO{sub 2} films grown at T{sub s}?

Vargas, Mirella [Department of Metallurgical and Materials Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)] [Department of Metallurgical and Materials Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States); Murphy, N. R. [Materials and Manufacturing Directorate (RX), 3005 Hobson Way, Wright-Patterson Air Force Base (WPAFB), Dayton, Ohio 45433 (United States)] [Materials and Manufacturing Directorate (RX), 3005 Hobson Way, Wright-Patterson Air Force Base (WPAFB), Dayton, Ohio 45433 (United States); Ramana, C. V., E-mail: rvchintalapalle@utep.edu [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)

2014-03-10T23:59:59.000Z

95

Optical generation of free charge carriers in thin films of tin oxide  

SciTech Connect (OSTI)

The methods of infrared absorption spectroscopy and Raman spectroscopy are used to study nanocrystalline SnO{sub x} films (1 {<=} x {<=} 2) prepared by thermal oxidation of metallic tin layers. A monotonic decrease in the transmittance of films in the infrared region has been observed as a result of exposure of the films to light with the wavelength of 380 nm at room temperature. The effect is at a maximum for the samples with x Almost-Equal-To 2 and is observed for {approx}10 min after switching off of illumination. The mentioned variations in optical properties, similarly to those observed in the case of heating of the samples in the dark, are accounted for by an increase in the concentration of free charge carriers (electrons) in nanocrystals of tin dioxide. The data of infrared spectroscopy and the Drude model are used to calculate the concentrations of photogenerated charge carriers ({approx}10{sup 19} cm{sup -3}); variations in these concentrations in the course of illumination and after switching off of illumination are determined. Mechanisms of observed photogeneration of charge carriers in SnO{sub x} films and possible applications of this effect to gas sensors are discussed.

Zhurbina, I. A., E-mail: zhurbina@vega.phys.msu.ru; Tsetlin, O. I.; Timoshenko, V. Yu. [Moscow State University (Russian Federation)

2011-02-15T23:59:59.000Z

96

Femtosecond all-optical parallel logic gates based on tunable saturable to reverse saturable absorption in graphene-oxide thin films  

SciTech Connect (OSTI)

A detailed theoretical analysis of ultrafast transition from saturable absorption (SA) to reverse saturable absorption (RSA) has been presented in graphene-oxide thin films with femtosecond laser pulses at 800?nm. Increase in pulse intensity leads to switching from SA to RSA with increased contrast due to two-photon absorption induced excited-state absorption. Theoretical results are in good agreement with reported experimental results. Interestingly, it is also shown that increase in concentration results in RSA to SA transition. The switching has been optimized to design parallel all-optical femtosecond NOT, AND, OR, XOR, and the universal NAND and NOR logic gates.

Roy, Sukhdev, E-mail: sukhdevroy@dei.ac.in; Yadav, Chandresh [Department of Physics and Computer Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282 005 (India)] [Department of Physics and Computer Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282 005 (India)

2013-12-09T23:59:59.000Z

97

Thin film hydrogen sensor  

DOE Patents [OSTI]

A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

1999-03-23T23:59:59.000Z

98

Thin film hydrogen sensor  

DOE Patents [OSTI]

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

Cheng, Yang-Tse (Rochester Hills, MI); Poli, Andrea A. (Livonia, MI); Meltser, Mark Alexander (Pittsford, NY)

1999-01-01T23:59:59.000Z

99

Effect of oxygen partial pressure on microstructural and optical properties of titanium oxide thin films prepared by pulsed laser deposition  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: • Microstructural and optical properties are studied systematically. • The optical properties are studied by UV–visible and photoluminescence. • The PL spectra shows two peaks correspond to bandgap of anatase and rutile. • The maximum refractive index of 2.73 is obtained for rutile phase of titania. - Abstract: Nanocrystalline titanium oxide (TiO{sub 2}) thin films were deposited on silicon (1 0 0) and quartz substrates at various oxygen partial pressures (1 × 10{sup ?5} to 3.5 × 10{sup ?1} mbar) with a substrate temperature of 973 K by pulsed laser deposition. The microstructural and optical properties were characterized using Grazing incidence X-ray diffraction, atomic force microscopy, UV–visible spectroscopy and photoluminescence. The X-ray diffraction studies indicated the formation of mixed phases (anatase and rutile) at higher oxygen partial pressures (3.5 × 10{sup ?2} to 3.5 × 10{sup ?1} mbar) and strong rutile phase at lower oxygen partial pressures (1 × 10{sup ?5} to 3.5 × 10{sup ?3} mbar). The atomic force microscopy studies showed the dense and uniform distribution of nanocrystallites. The root mean square surface roughness of the films increased with increasing oxygen partial pressures. The UV–visible studies showed that the bandgap of the films increased from 3.20 eV to 3.60 eV with the increase of oxygen partial pressures. The refractive index was found to decrease from 2.73 to 2.06 (at 550 nm) as the oxygen partial pressure increased from 1.5 × 10{sup ?4} mbar to 3.5 × 10{sup ?1} mbar. The photoluminescence peaks were fitted to Gaussian function and the bandgap was found to be in the range ?3.28–3.40 eV for anatase and 2.98–3.13 eV for rutile phases with increasing oxygen partial pressure from 1 × 10{sup ?5} to 3.5 × 10{sup ?1} mbar.

Balakrishnan, G., E-mail: bala_physics76@yahoo.co.uk [Department of Mechanical Engineering, Changwon National University, Changwon 641773 (Korea, Republic of); Department of Mechanical Engineering, Bharath University, Chennai 600073 (India); Bandi, Vengala Rao [Department of Physics, Changwon National University, Changwon 641773 (Korea, Republic of); Rajeswari, S.M.; Balamurugan, N. [Department of Physics, PERI Institute of Technology, Chennai 600048 (India); Babu, R. Venkatesh [Department of Mechanical Engineering, Bharath University, Chennai 600073 (India); Song, J.I., E-mail: jisong@changwon.ac.kr [Department of Mechanical Engineering, Changwon National University, Changwon 641773 (Korea, Republic of)

2013-11-15T23:59:59.000Z

100

Thin Film Photovoltaics Research  

Broader source: Energy.gov [DOE]

The U.S. Department of Energy (DOE) supports research and development of four thin-film technologies on the path to achieving cost-competitive solar energy, including:

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Thin film solar energy collector  

DOE Patents [OSTI]

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

1983-11-22T23:59:59.000Z

102

STRESSES AND FAILURE MODES IN THIN FILMS AND MULTILAYERS  

E-Print Network [OSTI]

Stressesin a Thin Film 4 2.3 Stresses in a Multilayer: Layer by Layer Deposition and Release from of the Interface a Bilayer under Residual Stress 30 5.2 Delamination of a Bilayer by Layer Cracking Parallel FOR THIN FILMS UNDER RESIDUAL COMPRESSION 36 6.1 Straight-sided Blisters 36 6.2 Circular Blisters 40 6

Hutchinson, John W.

103

Effect of the substrate temperature on the physical properties of molybdenum tri-oxide thin films obtained through the spray pyrolysis technique  

SciTech Connect (OSTI)

Polycrystalline molybdenum tri-oxide thin films were prepared using the spray pyrolysis technique; a 0.1 M solution of ammonium molybdate tetra-hydrated was used as a precursor. The samples were prepared on Corning glass substrates maintained at temperatures ranging between 423 and 673 K. The samples were characterized through micro Raman, X-ray diffraction, optical transmittance and DC electrical conductivity. The species MoO{sub 3} (H{sub 2}O){sub 2} was found in the sample prepared at a substrate temperature of 423 K. As the substrate temperature rises, the water disappears and the samples crystallize into {alpha}-MoO{sub 3}. The optical gap diminishes as the substrate temperature rises. Two electrical transport mechanisms were found: hopping under 200 K and intrinsic conduction over 200 K. The MoO{sub 3} films' sensitivity was analyzed for CO and H{sub 2}O in the temperature range 160 to 360 K; the results indicate that CO and H{sub 2}O have a reduction character. In all cases, it was found that the sensitivity to CO is lower than that to H{sub 2}O. - Highlights: Black-Right-Pointing-Pointer A low cost technique is used which produces good material. Black-Right-Pointing-Pointer Thin films are prepared using ammonium molybdate tetra hydrated. Black-Right-Pointing-Pointer The control of the physical properties of the samples could be done. Black-Right-Pointing-Pointer A calculation method is proposed to determine the material optical properties. Black-Right-Pointing-Pointer The MoO{sub 3} thin films prepared by spray pyrolysis could be used as gas sensor.

Martinez, H.M. [Grupo de Materiales con Aplicaciones Tecnologicas, Departamento de Fisica Universidad Nacional de Colombia sede Bogota (Colombia)] [Grupo de Materiales con Aplicaciones Tecnologicas, Departamento de Fisica Universidad Nacional de Colombia sede Bogota (Colombia); Torres, J., E-mail: njtorress@unal.edu.co [Grupo de Materiales con Aplicaciones Tecnologicas, Departamento de Fisica Universidad Nacional de Colombia sede Bogota (Colombia); Lopez Carreno, L.D. [Grupo de Materiales con Aplicaciones Tecnologicas, Departamento de Fisica Universidad Nacional de Colombia sede Bogota (Colombia)] [Grupo de Materiales con Aplicaciones Tecnologicas, Departamento de Fisica Universidad Nacional de Colombia sede Bogota (Colombia); Rodriguez-Garcia, M.E. [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Campus Juriquilla, Queretaro, Qro., Mexico (Colombia)] [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Campus Juriquilla, Queretaro, Qro., Mexico (Colombia)

2013-01-15T23:59:59.000Z

104

Structural and electrochemical characterization of two proton conducting oxide thin films for a microfabricated solid oxide fuel cell  

E-Print Network [OSTI]

The use of proton conducting oxide materials as an electrolyte offers the potential to reduce the operating temperature of a solid oxide fuel cell (SOFC), leading to improved thermal management and material compatibility. ...

Capozzoli, Peter M

2006-01-01T23:59:59.000Z

105

Thin film buried anode battery  

DOE Patents [OSTI]

A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

Lee, Se-Hee (Lakewood, CO); Tracy, C. Edwin (Golden, CO); Liu, Ping (Denver, CO)

2009-12-15T23:59:59.000Z

106

APPLIED PHYSICS REVIEWS Erbium implanted thin film photonic materials  

E-Print Network [OSTI]

, phosphosilicate, borosilicate, and soda-lime glasses , ceramic thin films Al2O3, Y2O3, LiNbO3 , and amorphous. Phosphosilicate glass. . . . . . . . . . . . . . . . . . . . . . 7 C. Soda-lime silicate glass Er-doped thin film photonic materials is described. It focuses on oxide glasses pure SiO2

Polman, Albert

107

EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS  

E-Print Network [OSTI]

EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS Yun Seog Lee 1; * Corresponding author: buonassisi@mit.edu; ABSTRACT We investigate earth abundant materials for thin- film solar cuprous oxide (Cu2O) as a prototype candidate for investigation as an absorber layer in thin film solar

Ceder, Gerbrand

108

Thin Film Reliability SEMICONDUCTORS  

E-Print Network [OSTI]

Thin Film Reliability SEMICONDUCTORS Our goal is to develop new ways to evaluate the reliability $250 billion per year. As semiconductor devices become ultra miniaturized, reliability testing becomes-world conditions as possible will enable product designers to better balance performance and reliability

109

Thin film photovoltaic cell  

DOE Patents [OSTI]

A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

Meakin, John D. (Newark, DE); Bragagnolo, Julio (Newark, DE)

1982-01-01T23:59:59.000Z

110

Thin Film Transistors On Plastic Substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

2004-01-20T23:59:59.000Z

111

Fabrication and characterization of high energy density lithium-rich nickel manganese cobalt oxide cathode thin films  

SciTech Connect (OSTI)

This paper reports a method to prepare Li-rich NMC (Li1.2Mn0.55Ni0.15Co0.1O2) thin film cathodes for Li-ion batteries using magnetron sputtering and post-annealing in O2. The use of thin films with no binder and conductive additives enables to study in detail the surface reaction chemistry upon cycling as well as the microstructural changes in the bulk. We show that it is essential to control the deposition pressure to obtain the expected layered(R-3m)-layered(C2/m) structure, thus providing large reversible capacities up to 270 mAh g-1 and voltage profiles close to those expected. This is substantiated by TEM/SAED results showing that the films consist of a layered structure with trigonal symmetry in which Li/TM ordering is achieved. The study of various XPS core levels determines that the surface is comprised of Mn4+, Co3+ and Ni2+ cations inside an O2- framework. The losses mechanisms are studied during long cycling. After 184 cycles, the microstructure does not reveal the presence of Li/TM ordering, which supports that Li2MnO3 conversion is irreversible. In addition, we characterize that the surface chemistry evolves significantly upon cycling. The surface of cycled discharged electrodes is mostly made of inorganic species (LiF, Lix POy Fz , LixPFy), along with small amounts of organic species with C-O and O-C=O groups such as PEO, LiOR and LiCO2R. Moreover, the results support that Ni and Co migrate into the bulk whereas Mn is enriched at the surface. In the case of Mn, the reduction of Mn4+ into Mn3+ is clearly evidenced, as expected from the activation of Li2MnO3 domains.

Baggetto, Loic [ORNL] [ORNL; Mohanty, Debasish [ORNL] [ORNL; Meisner, Roberta Ann [ORNL] [ORNL; Daniel, Claus [ORNL] [ORNL; Wood III, David L [ORNL] [ORNL; Dudney, Nancy J [ORNL] [ORNL; Veith, Gabriel M [ORNL] [ORNL

2014-01-01T23:59:59.000Z

112

Thin-film optical initiator  

DOE Patents [OSTI]

A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

Erickson, Kenneth L. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

113

Oxidation of In2S3 films to synthetize In2S3(1-x)O3x thin films as a buffer layer in solar cells  

E-Print Network [OSTI]

Oxidation of In2S3 films to synthetize In2S3(1-x)O3x thin films as a buffer layer in solar cells S layers for solar cells. PACS : 68.55.ag Semiconductors, 68.55.J Morphology of films , 68.55.Nq the oxidation occurs is strongly dependent on the texture of deposited films. As-grown films deposited

Boyer, Edmond

114

Thin film composite electrolyte  

DOE Patents [OSTI]

The invention is a thin film composite solid (and a means for making such) suitable for use as an electrolyte, having a first layer of a dense, non-porous conductive material; a second layer of a porous ionic conductive material; and a third layer of a dense non-porous conductive material, wherein the second layer has a Coefficient of thermal expansion within 5% of the coefficient of thermal expansion of the first and third layers.

Schucker, Robert C. (The Woodlands, TX)

2007-08-14T23:59:59.000Z

115

Properties of tungsten oxide thin films formed by ion-plasma and laser deposition methods for MOSiC-based hydrogen sensors  

SciTech Connect (OSTI)

Thin-film structures based on gas-sensitive tungsten oxide and catalytic platinum are fabricated by room-temperature deposition on a silicon carbide wafer using pulsed laser and ion-plasma methods. Oxide layer annealing in air to 600 Degree-Sign C caused the formation of microstructured and nanostructured crystalline states depending on the deposition conditions. Structural differences affect the electrical parameters and the stability of characteristics. The maximum response to hydrogen is detected in the structure fabricated by depositing a low-energy laser-induced flow of tungsten atoms in oxygen. The voltage shift of the currentvoltage curves for 2% H{sub 2} in air at 350 Degree-Sign C was 4.6 V at a current of {approx}10 {mu}A. The grown structures' metastability caused a significant decrease in the shift after long-term cyclic testing. The most stable shifts of {approx}2 V at positive bias on the Pt contact were detected for oxide films deposited by ion-plasma sputtering.

Fominski, V. Y., E-mail: vyfominskij@mephi.ru [National Research Nuclear University 'MEPhI' (Russian Federation); Grigoriev, S. N. [Moscow State Technological University 'Stankin' (Russian Federation); Romanov, R. I.; Zuev, V. V.; Grigoriev, V. V. [National Research Nuclear University 'MEPhI' (Russian Federation)

2012-03-15T23:59:59.000Z

116

Thin film hydrogen sensor  

DOE Patents [OSTI]

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

Lauf, Robert J. (Oak Ridge, TN); Hoffheins, Barbara S. (Knoxville, TN); Fleming, Pamela H. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

117

Study of GaN:Eu3+ Thin Films Deposited by Metallorganic  

E-Print Network [OSTI]

as an advantageous architecture for transparent electrodes in optoelectronic devices due primarily to high characteristics of electrodes in optoelectronic devices and in supercapactiors, we introduced oxide thin films

McKittrick, Joanna

118

Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere  

SciTech Connect (OSTI)

The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w???d{sub f}{sup ?}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent ? is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ? increases with film thickness also with a power law according to ????d{sub f}{sup z} with exponents z?=?0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2?+?1 dimensions is discussed for the ITO growth in this work.

Nie, Man, E-mail: man.nie@helmholtz-berlin.de; Mete, Tayfun; Ellmer, Klaus [Department of Solar Fuels and Energy Storage Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D14109 Berlin (Germany)

2014-04-21T23:59:59.000Z

119

Enhancement of conduction noise absorption by hybrid absorbers composed of indium-tin-oxide thin film and magnetic composite sheet on a microstrip line  

SciTech Connect (OSTI)

In order to develop wide-band noise absorbers with a focused design for low frequency performance, this study investigates hybrid absorbers that are composed of conductive indium-tin-oxide (ITO) thin film and magnetic composite sheets. The ITO films prepared via reactive sputtering exhibit a typical value of electrical resistivity of ?10{sup ?4} ? m. Rubber composites with flaky Fe-Si-Al particles are used as the magnetic sheet with a high permeability and high permittivity. For the ITO film with a low surface resistance and covered by the magnetic sheet, approximately 90% power absorption can be obtained at 1?GHz, which is significantly higher than that of the original magnetic sheet or ITO film. The high power absorption of the hybrid absorber is attributed to the enhanced ohmic loss of the ITO film through increased electric field strength bounded by the upper magnetic composite sheet. However, for the reverse layering sequence of the ITO film, the electric field experienced by ITO film is very weak due to the electromagnetic shielding by the under layer of magnetic sheet, which does not result in enhanced power absorption.

Kim, Sun-Hong; Kim, Sung-Soo, E-mail: sskim@chungbuk.ac.kr [Department of Advanced Materials Engineering, Chungbuk National University, Cheongju 361-763 (Korea, Republic of)

2014-05-05T23:59:59.000Z

120

Annealed CVD molybdenum thin film surface  

DOE Patents [OSTI]

Molybdenum thin films deposited by pyrolytic decomposition of Mo(CO).sub.6 attain, after anneal in a reducing atmosphere at temperatures greater than 700.degree. C., infrared reflectance values greater than reflectance of supersmooth bulk molybdenum. Black molybdenum films deposited under oxidizing conditions and annealed, when covered with an anti-reflecting coating, approach the ideal solar collector characteristic of visible light absorber and infrared energy reflector.

Carver, Gary E. (Tucson, AZ); Seraphin, Bernhard O. (Tucson, AZ)

1984-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Electro-oxidized Epitaxial Graphene Channel Field-Effect Transistors with Single-Walled Carbon Nanotube Thin Film  

E-Print Network [OSTI]

Electro-oxidized Epitaxial Graphene Channel Field-Effect Transistors with Single-Walled Carbon on the electronic properties of epitaxial graphene (EG) grown on silicon carbide substrates; we demonstrate the introduction of the reaction medium into the graphene galleries during electro-oxidation. The device

122

Growth of SiC thin films on graphite for oxidation-protective coating J.-H. Boo,a)  

E-Print Network [OSTI]

, it is necessary to improve its resistance to oxidation. SiC is used as a semiconductor material for high of the SiC layers compared to those grown by thermal MOCVD. The mechanical and oxidation-resistant-2101 00 18204-1 I. INTRODUCTION Graphite, with its advantages of high thermal conductiv- ity, low-thermal

Boo, Jin-Hyo

123

Thin film hydrogen sensor  

DOE Patents [OSTI]

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

1994-11-22T23:59:59.000Z

124

Microstructure, residual stress, and mechanical properties of thin film materials for a microfabricated solid oxide fuel cell  

E-Print Network [OSTI]

The microstructure and residual stress of sputter-deposited films for use in microfabricated solid oxide fuel cells are presented. Much of the work focuses on the characterization of a candidate solid electrolyte: Yttria ...

Quinn, David John, Sc. D. Massachusetts Institute of Technology

2006-01-01T23:59:59.000Z

125

Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy Thin Films Studied Using Atom Probe Tomography: Comparison Of Experiments And Simulation  

SciTech Connect (OSTI)

Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxial (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation it is very challenging to characterize by conventional techniques. Therefor laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr0.61Mo0.39, Cr0.77Mo0.23, and Cr0.32V0.68 alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were thus confirmed.

Devaraj, Arun; Kaspar, Tiffany C.; Ramanan, Sathvik; Walvekar, Sarita K.; Bowden, Mark E.; Shutthanandan, V.; Kurtz, Richard J.

2014-11-21T23:59:59.000Z

126

Low Temperature Deposition of Metal Oxide Thin Films in Supercritical Carbon Dioxide using Metal-organic Precursors  

E-Print Network [OSTI]

and are driven by the energy provided by a heated substrate. Both these vacuum-based techniques require in the precursor adsorption, oxidation and by-product desorption. [5] Use of solvation energy may provide a viable. Pressurized CO2 was delivered using an ISCO 260D syringe pump through a high- pressure manifold. Resistive

Gougousi, Theodosia

127

Vertically Aligned Nanocomposite Thin Films  

E-Print Network [OSTI]

and epitaxial growth ability on given substrates. In the present work, we investigated unique epitaxial two-phase VAN (BiFeO3)x:(Sm2O3)1-x and (La0.7Sr0.3MnO3)x:(Mn3O4)1-x thin film systems by pulsed laser deposition. These VAN thin films exhibit a highly...

Bi, Zhenxing

2012-07-16T23:59:59.000Z

128

Modeling and control of thin film surface morphology: application to thin film solar cells  

E-Print Network [OSTI]

of a p-i-n thin-film solar cell with front transparent con-for thin-film a-si:h solar cells. Progress in Photovoltaics,in thin-film silicon solar cells. Optics Communications,

Huang, Jianqiao

2012-01-01T23:59:59.000Z

129

The effect of deposition power on the electrical properties of Al-doped zinc oxide thin films  

SciTech Connect (OSTI)

We investigated the effect on the electronic properties of aluminum (Al)-zinc oxide (ZnO) films by modulating the radio frequency sputtering power. Our experimental results show that increasing the sputtering power increases the Al doping concentration, decreases the resistivity, and also shifts the Zn 2p and O 1s to higher binding energy states. Our local-density approximation (LDA) and LDA+U calculations show that the shift in higher binding energy and resistivity decrease are due to an enhancement of the O 2p-Zn 3d coupling and the modification of the Zn 4s-O 2p interaction in ZnO induced by Al doping.

Chun, B. S.; Choi, Daniel S. [Department of Chemical and Materials Engineering, University of Idaho, Moscow, Idaho 83844-3024 (United States); Wu, H. C.; Shvets, I. V. [CRANN, School of Physics, Trinity College Dublin, Dublin 2 (Ireland); Abid, M. [IPMC, Ecole Polytechnique Federale de Lausanne, Station 3, CH-1015 Lausanne (Switzerland); King Abdullah Institute for Nanotechnology, King Saud University, Riyadh 11451 (Saudi Arabia); Chu, I. C. [Data and Storage R and D Laboratory, Seocho R and D Campus, LG Electronics, Seoul 137-130 (Korea, Republic of); Serrano-Guisan, S. [Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany)

2010-08-23T23:59:59.000Z

130

X-ray photoelectron spectroscopy study of para-substituted benzoic acids chemisorbed to aluminum oxide thin films  

SciTech Connect (OSTI)

A series of para-substituted, halogenated (F, Cl, Br, and I) benzoic acid monolayers were prepared on the native oxide of aluminum surfaces by solution self-assembly and spin-coating techniques. The monolayers were characterized by x-ray photoelectron spectroscopy (XPS) and water contact angles. Several general trends are apparent. First, the polarity of the solvent is critical to monolayer formation. Protic polar solvents produced low coverage monolayers; in contrast, nonpolar solvents produced higher coverage monolayers. Second, solution deposition yields a higher surface coverage than spin coating. Third, the thickness of the monolayers determined from XPS suggests the plane of the aromatic ring is perpendicular to the surface with the carboxylate functional group most likely binding in a bidentate chelating geometry. Fourth, the saturation coverage (?2.7 × 10{sup 14} molecules cm{sup ?2}) is independent of the para-substituent.

Kreil, Justin; Ellingsworth, Edward; Szulczewski, Greg [Department of Chemistry, The University of Alabama, Shelby Hall, 250 Hackberry Lane, Tuscaloosa, Alabama 35487 (United States)] [Department of Chemistry, The University of Alabama, Shelby Hall, 250 Hackberry Lane, Tuscaloosa, Alabama 35487 (United States)

2013-11-15T23:59:59.000Z

131

Studies of solution deposited cerium oxide thin films on textured Ni-alloy substrates for YBCO superconductor  

SciTech Connect (OSTI)

Cerium oxide (CeO{sub 2}) buffer layers play an important role for the development of YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) based superconducting tapes using the rolling assisted biaxially textured substrates (RABiTS) approach. The chemical solution deposition (CSD) approach has been used to grow epitaxial CeO{sub 2} films on textured Ni-3 at.% W alloy substrates with various starting precursors of ceria. Precursors such as cerium acetate, cerium acetylacetonate, cerium 2-ethylhexanoate, cerium nitrate, and cerium trifluoroacetate were prepared in suitable solvents. The optimum growth conditions for these cerium precursors were Ar-4% H{sub 2} gas processing atmosphere, solution concentration levels of 0.2-0.5 M, a dwell time of 15 min, and a process temperature range of 1050-1150 deg. C. X-ray diffraction, AFM, SEM, and optical microscopy were used to characterize the CeO{sub 2} films. Highly textured CeO{sub 2} layers were obtained on Ni-W substrates with both cerium acetate and cerium acetylacetonate as starting precursors. YBCO films with a J {sub c} of 1.5 MA/cm{sup 2} were obtained on cerium acetylacetonate-based CeO{sub 2} films with sputtered YSZ and CeO{sub 2} cap layers.

Stewart, E. [Chemical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6100 (United States); Bhuiyan, M.S. [Chemical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6100 (United States); Sathyamurthy, S. [Chemical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6100 (United States); Paranthaman, M. [Chemical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6100 (United States)]. E-mail: paranthamanm@ornl.gov

2006-06-15T23:59:59.000Z

132

The limits of ultrahigh-resolution x-ray mapping: estimating uncertainties in thin-film and interface structures determined by phase retrieval methods  

SciTech Connect (OSTI)

Capturing subtle details at the sub-Angstrom level is key to understanding the structural basis of many intriguing interfacial phenomena in epitaxial thin films and nanostructures. X-ray phase retrieval methods are ideally suited to this task but the usual approaches for determination of uncertainties, based on refining a parametrized model, are not applicable in this case. Here we describe a method to estimate the uncertainties of the system electron density, obtained by phase retrieval, and of parameters of interest obtained from it. The method is based on the bootstrap approach and it can be generally applied to surface x-ray scattering data. Several examples are given which illustrate the method's utility in determining uncertainties arising from random and systematic errors. The approach also provides a quantitative measure of the validity of structural solutions obtained by phase retrieval methods.

Zhou H.; Pindak R.; Clarke, R.; Steinberg, D.NM.; Yacoby, Y.

2012-04-25T23:59:59.000Z

133

Modeling of capacitance transients of thin-film solar cells: A valuable tool to gain information on perturbing layers or interfaces  

SciTech Connect (OSTI)

Thin-film electronic and photovoltaic devices often comprise, in addition to the anticipated p-n junctions, additional non-ideal ohmic contacts between layers. This may give rise to additional signals in capacitance spectroscopy techniques that are not directly related to defects in the structure. In this paper, we present a fitting algorithm for transient signals arising from such an additional junction. The fitting results are in excellent agreement with the diode characteristics extracted from static measurements on individual components. Finally, the algorithm is applied for determining the barriers associated with anomalous signals reported for selected CuIn{sub 1–x}Ga{sub x}Se{sub 2} and CdTe solar cells.

Lauwaert, Johan, E-mail: Johan.Lauwaert@UGent.be; Van Puyvelde, Lisanne; Vrielinck, Henk [Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, 9000 Gent (Belgium); Lauwaert, Jeroen; Thybaut, Joris W. [Laboratory for Chemical Technology (LCT), Ghent University, Krijgslaan 281-S5, 9000 Gent (Belgium)

2014-02-03T23:59:59.000Z

134

LIQUID PHASE DEPOSITION OF ELECTROCHROMIC THIN FILMS T. J. Richardson and M. D. Rubin  

E-Print Network [OSTI]

1 LIQUID PHASE DEPOSITION OF ELECTROCHROMIC THIN FILMS T. J. Richardson and M. D. Rubin electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared, and readily scalable to larger substrates. Keywords: liquid phase deposition; electrochromic films; thin film

135

Thin film lithium-based batteries and electrochromic devices fabricated with nanocomposite electrode materials  

DOE Patents [OSTI]

Thin-film lithium-based batteries and electrochromic devices (10) are fabricated with positive electrodes (12) comprising a nanocomposite material composed of lithiated metal oxide nanoparticles (40) dispersed in a matrix composed of lithium tungsten oxide.

Gillaspie, Dane T; Lee, Se-Hee; Tracy, C. Edwin; Pitts, John Roland

2014-02-04T23:59:59.000Z

136

Epitaxial Thin Film XRD | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series toESnet4:Epitaxial Thin Film XRD Epitaxial Thin Film XRD Systems

137

Semiconductor-nanocrystal/conjugated polymer thin films  

DOE Patents [OSTI]

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Alivisatos, A. Paul (Oakland, CA); Dittmer, Janke J. (Munich, DE); Huynh, Wendy U. (Munich, DE); Milliron, Delia (Berkeley, CA)

2010-08-17T23:59:59.000Z

138

Low work function, stable thin films  

DOE Patents [OSTI]

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

2000-01-01T23:59:59.000Z

139

Molecular doping for control of gate bias stress in organic thin film transistors  

SciTech Connect (OSTI)

The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface.

Hein, Moritz P., E-mail: hein@iapp.de; Lüssem, Björn; Jankowski, Jens; Tietze, Max L.; Riede, Moritz K. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany)] [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany); Zakhidov, Alexander A. [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)] [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany); Leo, Karl [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany) [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany); Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)

2014-01-06T23:59:59.000Z

140

Thin film polymeric gel electrolytes  

DOE Patents [OSTI]

Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

Derzon, Dora K. (1554 Rosalba St. NE., Albuquerque, Bernalillo County, NM 87112); Arnold, Jr., Charles (3436 Tahoe, NE., Albuquerque, Bernalillo County, NM 87111); Delnick, Frank M. (9700 Fleming Rd., Dexter, MI 48130)

1996-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Thin film polymeric gel electrolytes  

DOE Patents [OSTI]

Novel hybrid thin film electrolytes, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1} cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

Derzon, D.K.; Arnold, C. Jr.; Delnick, F.M.

1996-12-31T23:59:59.000Z

142

Preparation and characterization of TL-based superconducting thin films  

E-Print Network [OSTI]

A simple method for growth of Tl-based superconducting thin films is described. In this method, the precursor was prepared in a vacuum chamber by deposition of Ba, Ca and Cu metals or a Ba-Ca alloy and Cu metal. The precursor was then oxidized...

Wang, Pingshu

1995-01-01T23:59:59.000Z

143

Thin film photovoltaic cells  

DOE Patents [OSTI]

A solar cell has as its transparent electrical contact a grid made from a non-noble metal by providing a layer of copper oxide between the transparent electrical contact and the absorber-generator.

Rothwarf, Allen (Philadelphia, PA)

1981-01-01T23:59:59.000Z

144

Metallic to insulating transition in disordered pulsed laser deposited silicide thin films.  

E-Print Network [OSTI]

??A metal-to-insulating transition has been observed in iron, iron oxide, iron silicide and cobalt silicide thin films when deposited on Si substrate with a native… (more)

Abou Mourad, Houssam

2005-01-01T23:59:59.000Z

145

Apparatus for making cathodo- and photo- luminescent measurements of thin film phosphors  

E-Print Network [OSTI]

the understanding of the thin film phosphor, tungsten doped zinc oxide. Principally, a vacuum system is constructed and provides for both photo-and cathode-phosphor excitations. A measurement capability is then included. Finally, additions are mentioned...

Babuchna, Paul Michael

1998-01-01T23:59:59.000Z

146

Scanning tunneling microscopic studies of SiO2 thin film supported metal nano-clusters  

E-Print Network [OSTI]

This dissertation is focused on understanding heterogeneous metal catalysts supported on oxides using a model catalyst system of SiO2 thin film supported metal nano-clusters. The primary technique applied to this study is scanning tunneling...

Min, Byoung Koun

2005-11-01T23:59:59.000Z

147

In situ synchrotron x-ray studies of dense thin-film strontium-doped lanthanum manganite solid oxide fuel cell cathodes.  

SciTech Connect (OSTI)

Using a model cathode-electrolyte system composed of epitaxial thin-films of La{sub 1-x}Sr{sub x}MnO{sub 3-{delta}} (LSM) on single crystal yttria-stabilized zirconia (YSZ), we investigated changes in the cation concentration profile in the LSM during heating and under applied potential using grazing incidence x-rays. Pulsed laser deposition (PLD) was used to grow epitaxial LSM(011) on YSZ(111). At room temperature, we find that Sr segregates to form Sr enriched nanoparticles and upon heating the sample to 700 C, Sr is slowly reincorporated into the film. We also find different amounts of Sr segregation as the X-ray beam is moved across the sample. The variation in the amount of Sr segregation is greater on the sample that has been subject to 72 hours of applied potential, suggesting that the electrochemistry plays a role in the Sr segregation.

Chang, K. C.; Ingram, B.; Kavaipatti, B.; Yildiz, B.; Hennessy, D.; Salvador, P.; Leyarovski, N.; You, H.; Carnegie Mellon Univ.; Massachusetts Inst. of Tech.

2009-01-01T23:59:59.000Z

148

Preparation of redox polymer cathodes for thin film rechargeable batteries  

DOE Patents [OSTI]

The present invention relates to the manufacture of thin film solid state electrochemical devices using composite cathodes comprising a redox polymer capable of undergoing oxidation and reduction, a polymer solid electrolyte and conducting carbon. The polymeric cathode material is formed as a composite of radiation crosslinked polymer electrolytes and radiation crosslinked redox polymers based on polysiloxane backbones with attached organosulfur side groups capable of forming sulfur-sulfur bonds during electrochemical oxidation.

Skotheim, T.A.; Lee, H.S.; Okamoto, Yoshiyuki.

1994-11-08T23:59:59.000Z

149

Theoretical simulations of protective thin film Fabry-Pérot filters for integrated optical elements of diode pumped alkali lasers (DPAL)  

SciTech Connect (OSTI)

The lifetime of Diode-Pumped Alkali Lasers (DPALs) is limited by damage initiated by reaction of the glass envelope of its gain medium with rubidium vapor. Rubidium is absorbed into the glass and the rubidium cations diffuse through the glass structure, breaking bridging Si-O bonds. A damage-resistant thin film was developed enhancing high-optical transmission at natural rubidium resonance input and output laser beam wavelengths of 780 nm and 795 nm, while protecting the optical windows of the gain cell in a DPAL. The methodology developed here can be readily modified for simulation of expected transmission performance at input pump and output laser wavelengths using different combination of thin film materials in a DPAL. High coupling efficiency of the light through the gas cell was accomplished by matching the air-glass and glass-gas interfaces at the appropriate wavelengths using a dielectric stack of high and low index of refraction materials selected to work at the laser energies and protected from the alkali metal vapor in the gain cell. Thin films as oxides of aluminum, zirconium, tantalum, and silicon were selected allowing the creation of Fabry-Perot optical filters on the optical windows achieving close to 100% laser transmission in a solid optic combination of window and highly reflective mirror. This approach allows for the development of a new whole solid optic laser.

Quarrie, L., E-mail: Lindsay.Quarrie@l-3com.com, E-mail: lindsay.o.quarrie@gmail.com [New Mexico Institute of Mining and Technology, Department of Materials Engineering, 801 LeRoy Place, Socorro, NM 87801 (United States); Air Force Research Laboratory, AFRL/RDLC Laser CoE, 3550 Aberdeen Avenue SE, Kirtland AFB, NM 87117-5776 (United States)

2014-09-15T23:59:59.000Z

150

Thin-film Lithium Batteries  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism in Layered NbS2 andThe1 MembersStability| EMSLforThin Thin-Film

151

Optical-Fiber-Based, Time-Resolved Photoluminescence Spectrometer for Thin-Film Absorber Characterization and Analysis of TRPL Data for CdS/CdTe Interface: Preprint  

SciTech Connect (OSTI)

We describe the design of a time resolved photoluminescence (TRPL) spectrometer for rapid semiconductor absorber characterization. Simplicity and flexibility is achieved by using single optical fiber to deliver laser pulses and to collect photoluminescence. We apply TRPL for characterization of CdS/CdTe absorbers after deposition, CdCl2 treatment, Cu doping, and back contact formation. Data suggest this method could be applied in various stages of PV device processing. Finally, we show how to analyze TRPL data for CdS/CdTe absorbers by considering laser light absorption depth and intermixing at CdS/CdTe interface.

Kuciauskas, D.; Duenow, J. N.; Kanevce, A.; Li, J. V.; Young, M. R.; Dippo, P.; Levi, D. H.

2012-06-01T23:59:59.000Z

152

Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films and their multilayered structures for photonic applications  

E-Print Network [OSTI]

1 Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films, 35042 Rennes Cedex, France Abstract Amorphous chalcogenide and alumino-silicate thin films were (As40Se60/Ge25Sb5S70) and mixed chalcogenide-oxide layers (As40Se60/alumino-silicate and Ga10Ge15Te75

Boyer, Edmond

153

Oxygen vacancies at the surface of SrTiO{sub 3} thin films  

SciTech Connect (OSTI)

The two-dimensional electron gas (2DEG) observed at the surface of oxide thin films and at the interface between two oxides has been widely discussed, but the mechanism responsible for this behavior is still not well understood. In this work, we study the properties of the SrTiO{sub 3} (001) surface and show that defects are necessary in order to explain this 2DEG. We study the properties of oxygen vacancies at the TiO{sub 2} and SrO terminated surface, and conclude they can explain the metallic behavior experimentally observed. There is a strong tendency for these vacancies to be localized at the surface, where the formation energy is less than 2.92?eV.

Silva, Alexandre R., E-mail: alexandre.silva@univasf.edu.br [Colegiado de Engenharia Mecânica, Universidade Federal do Vale do São Francisco, 48902-300 Juazeiro, BA (Brazil); Centro de Ciências Naturais e Humanas, Universidade Federal do ABC, 09210-580 Santo André, SP (Brazil); Dalpian, Gustavo M., E-mail: gustavo.dalpian@ufabc.edu.br [Centro de Ciências Naturais e Humanas, Universidade Federal do ABC, 09210-580 Santo André, SP (Brazil)

2014-01-21T23:59:59.000Z

154

Adhesion and Thin-Film Module Reliability  

SciTech Connect (OSTI)

Among the infrequently measured but essential properties for thin-film (T-F) module reliability are the interlayer adhesion and cohesion within a layer. These can be cell contact layers to glass, contact layers to the semiconductor, encapsulant to cell, glass, or backsheet, etc. We use an Instron mechanical testing unit to measure peel strengths at 90deg or 180deg and, in some cases, a scratch and tape pull test to evaluate inter-cell layer adhesion strengths. We present peel strength data for test specimens laminated from the three T-F technologies, before and after damp heat, and in one instance at elevated temperatures. On laminated T-F cell samples, failure can occur uniformly at any one of the many interfaces, or non-uniformly across the peel area at more than one interface. Some peel strengths are Lt1 N/mm. This is far below the normal ethylene vinyl acetate/glass interface values of >10 N/mm. We measure a wide range of adhesion strengths and suggest that adhesion measured under higher temperature and relative humidity conditions is more relevant for module reliability.

McMahon, T. J.; Jorgenson, G. J.

2006-01-01T23:59:59.000Z

155

E-Print Network 3.0 - activated aluminum oxide Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a thin film of nickel onto a previously prepared aluminum oxide... of oxidation, reduction, and high-temperature flashes; (b) aluminum thin film deposited over tungsten...

156

Thin films of mixed metal compounds  

DOE Patents [OSTI]

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

1985-01-01T23:59:59.000Z

157

Metal-semiconductor hybrid thin films in field-effect transistors  

SciTech Connect (OSTI)

Metal-semiconductor hybrid thin films consisting of an amorphous oxide semiconductor and a number of aluminum dots in different diameters and arrangements are formed by electron beam lithography and employed for thin-film transistors (TFTs). Experimental and computational demonstrations systematically reveal that the field-effect mobility of the TFTs enhances but levels off as the dot density increases, which originates from variations of the effective channel length that strongly depends on the electric field distribution in a transistor channel.

Okamura, Koshi, E-mail: koshi.okamura@kit.edu; Dehm, Simone [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany)] [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany); Hahn, Horst [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany) [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany); KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt, Petersenstr. 32, 64287 Darmstadt (Germany)

2013-12-16T23:59:59.000Z

158

Synthesis of thin films and materials utilizing a gaseous catalyst  

DOE Patents [OSTI]

A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

2013-10-29T23:59:59.000Z

159

Study of Copper Diffusion Through Ruthenium Thin Film by Photoemission  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide Thin Films.AdministrationAerosol

160

Oxygen Electrocatalysis on Epitaxial La[subscript 0.6]Sr[subscript 0.4]CoO[subscript 3-?] Perovskite Thin Films for Solid Oxide Fuel Cells  

E-Print Network [OSTI]

Hetero-structured interfaces of oxides, which can exhibit reactivity characteristics remarkably different from bulk oxides, are interesting systems to explore in search of highly active fuel cell catalysts for oxygen ...

Crumlin, Ethan J.

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Reduced graphene oxide based silver sulfide hybrid films formed at a liquid/liquid interface  

SciTech Connect (OSTI)

Free-standing, ultra-thin films of silver sulfide and reduced graphene oxide (RGO) based silver sulfide hybrids are prepared at a liquid/liquid interface employing in situ chemical reaction strategy. Ag{sub 2}S and RGO?Ag{sub 2}S hybrid films are characterized by various techniques such as UV-visible and photo luminescence spectroscopy, X-ray diffraction and scanning electron microscopy. The morphology of hybrid films consists of Ag{sub 2}S nanocrystals on RGO surface while Ag{sub 2}S films contains branched network of dendritic structures. RGO?Ag{sub 2}S exhibit interesting optical and electrical properties. The hybrid films absorb in the region 500–650 nm and show emission in the red region. A higher conductance is observed for the hybrid films arising from the RGO component. This simple low cost method can be extended to prepare other RGO based metal sulfides.

Bramhaiah, K., E-mail: jsneena@csmr.res.in; John, Neena S., E-mail: jsneena@csmr.res.in [Centre for Soft Matter Research, P.B. No.1329, Jalahalli, Bangalore-560013 (India)

2014-04-24T23:59:59.000Z

162

BDS thin film damage competition  

SciTech Connect (OSTI)

A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

Stolz, C J; Thomas, M D; Griffin, A J

2008-10-24T23:59:59.000Z

163

Thin film battery and method for making same  

DOE Patents [OSTI]

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

Bates, John B. (Oak Ridge, TN); Dudney, Nancy J. (Knoxville, TN); Gruzalski, Greg R. (Oak Ridge, TN); Luck, Christopher F. (Knoxville, TN)

1994-01-01T23:59:59.000Z

164

Thin film battery and method for making same  

DOE Patents [OSTI]

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode. Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between [minus]15 C and 150 C. 9 figs.

Bates, J.B.; Dudney, N.J.; Gruzalski, G.R.; Luck, C.F.

1994-08-16T23:59:59.000Z

165

TI--CR--AL--O thin film resistors  

DOE Patents [OSTI]

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Jankowski, Alan F. (Livermore, CA); Schmid, Anthony P. (Solana Beach, CA)

2000-01-01T23:59:59.000Z

166

MEMS-based thin-film fuel cells  

DOE Patents [OSTI]

A micro-electro-mechanical systems (MEMS) based thin-film fuel cells for electrical power applications. The MEMS-based fuel cell may be of a solid oxide type (SOFC), a solid polymer type (SPFC), or a proton exchange membrane type (PEMFC), and each fuel cell basically consists of an anode and a cathode separated by an electrolyte layer. Additionally catalyst layers can also separate the electrodes (cathode and anode) from the electrolyte. Gas manifolds are utilized to transport the fuel and oxidant to each cell and provide a path for exhaust gases. The electrical current generated from each cell is drawn away with an interconnect and support structure integrated with the gas manifold. The fuel cells utilize integrated resistive heaters for efficient heating of the materials. By combining MEMS technology with thin-film deposition technology, thin-film fuel cells having microflow channels and full-integrated circuitry can be produced that will lower the operating temperature an will yield an order of magnitude greater power density than the currently known fuel cells.

Jankowksi, Alan F.; Morse, Jeffrey D.

2003-10-28T23:59:59.000Z

167

THE MOTION OF SUPERCONDUCTING VORTICES IN THIN FILMS OF VARYING THICKNESS  

E-Print Network [OSTI]

with superconductor/vacuum interfaces is considered. A vortex is #12;rst shown to intersect such an interface normallyTHE MOTION OF SUPERCONDUCTING VORTICES IN THIN FILMS OF VARYING THICKNESS S.J. CHAPMAN #3; D.R. HERON y MATHEMATICAL INSTITUTE OXFORD OX1 3LB UK Abstract. The interaction of superconducting vortices

Chapman, Jon

168

Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Jeffrey W. Elam,*, David A. Baker, Alex B. F. Martinson,, Michael J. Pellin, and  

E-Print Network [OSTI]

precise coatings to be applied on all exposed surfaces of nanoporous substrates such as aerogels10 using ALD techniques to apply metal oxide coatings onto porous supports such as anodic aluminum oxide

169

Emergent Phenomena at Oxide Interfaces  

SciTech Connect (OSTI)

Transition metal oxides (TMOs) are an ideal arena for the study of electronic correlations because the s-electrons of the transition metal ions are removed and transferred to oxygen ions, and hence the strongly correlated d-electrons determine their physical properties such as electrical transport, magnetism, optical response, thermal conductivity, and superconductivity. These electron correlations prohibit the double occupancy of metal sites and induce a local entanglement of charge, spin, and orbital degrees of freedom. This gives rise to a variety of phenomena, e.g., Mott insulators, various charge/spin/orbital orderings, metal-insulator transitions, multiferroics, and superconductivity. In recent years, there has been a burst of activity to manipulate these phenomena, as well as create new ones, using oxide heterostructures. Most fundamental to understanding the physical properties of TMOs is the concept of symmetry of the order parameter. As Landau recognized, the essence of phase transitions is the change of the symmetry. For example, ferromagnetic ordering breaks the rotational symmetry in spin space, i.e., the ordered phase has lower symmetry than the Hamiltonian of the system. There are three most important symmetries to be considered here. (i) Spatial inversion (I), defined as r {yields} -r. In the case of an insulator, breaking this symmetry can lead to spontaneous electric polarization, i.e. ferroelectricity, or pyroelectricity once the point group belongs to polar group symmetry. (ii) Time-reversal symmetry (T) defined as t {yields} -t. In quantum mechanics, the time-evolution of the wave-function {Psi} is given by the phase factor e{sup -iEt/{h_bar}} with E being the energy, and hence time-reversal basically corresponds to taking the complex conjugate of the wave-function. Also the spin, which is induced by the 'spinning' of the particle, is reversed by time-reversal. Broken T-symmetry is most naturally associated with magnetism, since the spin operator changes sign with T-operation. (iii) Gauge symmetry (G), which is associated with a change in the phase of the wave-function as {Psi} {yields} e{sup i{theta}}{Psi}. Gauge symmetry is connected to the law of charge conservation, and broken G-symmetry corresponds to superconductivity/superfluidity. To summarize, the interplay among these electronic degrees of freedom produces various forms of symmetry breaking patterns of I, T, and G, leading to novel emergent phenomena, which can appear only by the collective behavior of electrons and cannot be expected from individual electrons. Figure 1 shows this schematically by means of several representative phenomena. From this viewpoint, the interfaces of TMOs offer a unique and important laboratory because I is already broken by the structure itself, and the detailed form of broken I-symmetry can often be designed. Also, two-dimensionality usually enhances the effects of electron correlations by reducing their kinetic energy. These two features of oxide interfaces produce many novel effects and functions that cannot be attained in bulk form. Given that the electromagnetic responses are a major source of the physical properties of solids, and new gauge structures often appear in correlated electronic systems, we put 'emergent electromagnetism' at the center of Fig. 1.

Hwang, H.Y.

2012-02-16T23:59:59.000Z

170

Thermal conductivity control by oxygen defect concentration modification in reducible oxides: The case of Pr{sub 0.1}Ce{sub 0.9}O{sub 2??} thin films  

SciTech Connect (OSTI)

We demonstrate the impact on thermal conductivity of varying the concentration of oxygen vacancies and reduced cations in Pr{sub 0.1}Ce{sub 0.9}O{sub 2??} thin films prepared by pulsed laser deposition. The oxygen vacancy concentration is controlled by varying the oxygen partial pressure between 1?×?10{sup ?4} and 1?atm at 650??°C. Corresponding changes in the oxygen non-stoichiometry (?) are monitored by detecting the lattice parameters of the films with high-resolution X-ray diffraction, while the thermal properties are characterized by time-domain thermoreflectance measurements. The films are shown to exhibit a variation in oxygen vacancy content, and in the Pr{sup 3+}/Pr{sup 4+} ratio, corresponding to changes in ? from 0.0027 to 0.0364, leading to a reduction in the thermal conductivity from k?=?6.62?±?0.61 to 3.82?±?0.51?W/m-K, respectively. These values agree well with those predicted by the Callaway and von Baeyer model for thermal conductivity in the presence of point imperfections. These results demonstrate the capability of controlling thermal conductivity via control of anion and cation defect concentrations in a given reducible oxide.

Luckyanova, Maria N.; Chen, Gang, E-mail: gchen2@mit.edu, E-mail: byildiz@mit.edu [Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Chen, Di; Tuller, Harry L. [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Ma, Wen; Yildiz, Bilge, E-mail: gchen2@mit.edu, E-mail: byildiz@mit.edu [Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2014-02-10T23:59:59.000Z

171

Visible spectrometer utilizing organic thin film absorption  

E-Print Network [OSTI]

In this thesis, I modeled and developed a spectrometer for the visible wavelength spectrum, based on absorption characteristics of organic thin films. The device uses fundamental principles of linear algebra to reconstruct ...

Tiefenbruck, Laura C. (Laura Christine)

2004-01-01T23:59:59.000Z

172

Solid State Thin Film Lithium Microbatteries  

E-Print Network [OSTI]

Solid state thin film lithium microbatteries fabricated by pulsed-laser deposition (PLD) are suggested. During deposition the following process parameters must be considered, which are laser energy and fluence, laser pulse ...

Shi, Z.

173

Optical Constants ofOptical Constants of Uranium Nitride Thin FilmsUranium Nitride Thin Films  

E-Print Network [OSTI]

Optical Constants ofOptical Constants of Uranium Nitride Thin FilmsUranium Nitride Thin FilmsDelta--Beta Scatter Plot at 220 eVBeta Scatter Plot at 220 eV #12;Why Uranium Nitride?Why Uranium Nitride? UraniumUranium, uranium,Bombard target, uranium, with argon ionswith argon ions Uranium atoms leaveUranium atoms leave

Hart, Gus

174

Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films  

DOE Patents [OSTI]

A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

Brinker, Charles Jeffrey (Albuquerque, NM); Prakash, Sai Sivasankaran (Minneapolis, MN)

1999-01-01T23:59:59.000Z

175

Thin film solar cell including a spatially modulated intrinsic layer  

DOE Patents [OSTI]

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

1989-03-28T23:59:59.000Z

176

Thin-film electrochemical power cells. Final report  

SciTech Connect (OSTI)

Fundamental properties of research cells were correlated with the projected performance of full scale power sources, considering both battery and supercapacitor concepts. In addition to establishing the data base for modelling and performance projections, the program had the additional objective of identifying loss mechanisms and degradation reactions, especially those unique to polymer thin film cell designs. Because of the intrinsic high electrode/electrolyte interface areas, interfacial reactions must be understood. Many applications require power under extreme conditions, and low temperature performance needs to be improved.

Owens, B.B.; Smyrl, W.H.

1991-01-01T23:59:59.000Z

177

Method of forming particulate materials for thin-film solar cells  

DOE Patents [OSTI]

A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

Eberspacher, Chris; Pauls, Karen Lea

2004-11-23T23:59:59.000Z

178

Thin film absorber for a solar collector  

DOE Patents [OSTI]

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, William G. (Cutchogue, NY)

1985-01-01T23:59:59.000Z

179

Thin film dielectric composite materials  

DOE Patents [OSTI]

A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

Jia, Quanxi (Los Alamos, NM); Gibbons, Brady J. (Los Alamos, NM); Findikoglu, Alp T. (Los Alamos, NM); Park, Bae Ho (Los Alamos, NM)

2002-01-01T23:59:59.000Z

180

Photoresponse of Tb{sup 3+} doped phosphosilicate thin films  

SciTech Connect (OSTI)

Phosphosilicate ceramic was doped with Tb{sup 3+} using sol-gel technique to prepare thin films. The films were prepared by spin coating the phosphosilicate sols on SiO{sub x}/indium-tin-oxide/glass substrates. The photocurrent of the films at 355 nm laser excitation was observed. The photoresponse as a function of applied field and laser energy was linear and showed no sign of saturation. The films exhibited very stable photoresponse under a very high number of laser shots.

Lee, B.L.; Cao, Z. [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering] [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering; Sisk, W.N.; Hudak, J. [Univ. of North Carolina, Charlotte, NC (United States)] [Univ. of North Carolina, Charlotte, NC (United States); Samuels, W.D.; Exarhos, G.J. [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science] [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science

1997-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Tungsten-doped thin film materials  

DOE Patents [OSTI]

A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

2003-12-09T23:59:59.000Z

182

Vibration welding system with thin film sensor  

DOE Patents [OSTI]

A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

2014-03-18T23:59:59.000Z

183

PULSED PLASMA DEPOSITED MALEIC ANHYDRIDE THIN FILMS AS FUNCTIONALISED SURFACES IN COMPOSITE  

E-Print Network [OSTI]

PULSED PLASMA DEPOSITED MALEIC ANHYDRIDE THIN FILMS AS FUNCTIONALISED SURFACES IN COMPOSITE substrate models carbon fibres in composite materials. The substrates are treated with different plasma properties of composite materials are strongly dependent on the integrity of the fibre-matrix interface

184

The interplay between spatially separated ferromagnetic and superconducting thin films  

E-Print Network [OSTI]

Ferromagnetic thin films have been grown via physical vapor deposition utilizing the technique of flash evaporation and characterized by measuring magnetization as a function of magnetic field. An Al thin film was evaporated atop the ferromagnetic...

Sullivan, Isaac John

2013-02-22T23:59:59.000Z

185

Guided Self-Assembly of Gold Thin Films  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Guided Self-Assembly of Gold Thin Films Guided Self-Assembly of Gold Thin Films Print Wednesday, 21 November 2012 12:18 Nanoparticles-man-made atoms with unique optical,...

186

Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by Oxygen-plasma-assisted Molecular Beam Epitaxy. Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by...

187

aluminium thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 21 Thin-Film Metamaterials called Sculptured Thin Films CERN Preprints Summary: Morphology...

188

SINGLE AND DUAL LAYER THIN FILM BULGE TESTING  

E-Print Network [OSTI]

film windows that are used in Next Generation Lithography masks and certain MEMS devices. The bulge testing method measures the mechanical properties of a thin film by isolating it in a thin film window of the system. Figure 6 Dual Layer Thin Film Membrane Window For a dual layer membrane the effective total

Huston, Dryver R.

189

THIN FILM MECHANICS BULGING AND Ph.D Dissertation  

E-Print Network [OSTI]

for the intensive effort in research in materials and processing techniques. Thin film windows are window underneath. The thin film window has such a small thickness to span ratio that it can usually be considered and precision-stretching of thin film windows are examined. Bulge Testing is a method used to evaluate

Huston, Dryver R.

190

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES  

E-Print Network [OSTI]

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES S. Suresh1 , T.-G. Nieh2 and B.W. Choi2: Mechanical properties; Nano-indentation; Thin films; Copper; Dislocations Introduction Indentation methods films on substrates (e.g., [2,3]) using instrumented indentation. Nano-indentation studies of thin films

Suresh, Subra

191

US polycrystalline thin film solar cells program  

SciTech Connect (OSTI)

The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the US Department of Energy's long-term goals by achieving high efficiencies (15%-20%), low-cost ($50/m{sup 2}), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The US Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe{sub 2} and CdTe with subcontracts to start in Spring 1990. 23 refs., 5 figs.

Ullal, H.S.; Zweibel, K.; Mitchell, R.L. (Solar Energy Research Inst., Golden, CO (USA)) [Solar Energy Research Inst., Golden, CO (USA)

1989-11-01T23:59:59.000Z

192

Enhanced Thin Film Organic Photovoltaic Devices  

Energy Innovation Portal (Marketing Summaries) [EERE]

A novel structure design for thin film organic photovoltaic (OPV) devices provides a system for increasing the optical absorption in the active layer. The waveguided structure permits reduction of the active layer thickness, resulting in enhanced charge collection and extraction, leading to improved power conversion efficiency compared to standard OPV devices....

2014-01-10T23:59:59.000Z

193

The catalytic reactivity of thin film crystal surfaces: Annual technical progress report  

SciTech Connect (OSTI)

Research is being conducted on Cu/Pd and Pd/Cu thin films. Work has been completed on the following: Work Function Studies on Epitaxial Cu/Pd Bilayer Films; Kinetics of CO and Oxygen Adsorption on Smooth and Sputtered Epitaxial Pd(lll) Films on Mica; A Simple Model for the Auger Electron Spectroscopy Evaluation of Thin Film Layer Growth Systems in Which Substrate-Overgrowth Mixing Occurs. Work in progress includes: AES of the Growth of Pd on (lll)Cu and Cu on (lll)Pd; Catalysis of the CO Oxidation Reaction on Epitaxial Cu/Pd Bilayer Films; Thermal Desorption Spectroscopy of CO from Various Thin Film Cu/Pd Bilayers; LEED Measurements; Kinetics of Adsorption of CO on Various Cu/Pd Bilayers. 7 figs.

Vook, R.W.

1988-02-15T23:59:59.000Z

194

Titanium and Magnesium Co-Alloyed Hematite Thin Films for Photoelectrochemical Water Splitting  

SciTech Connect (OSTI)

Using a combination of density functional theory calculation and materials synthesis and characterization we examine the properties of charge-compensated Ti and Mg co-alloyed hematite thin films for the application of photoelectrochemical (PEC) water splitting. We find that the charge-compensated co-alloying results in the following effects: (1) It enhances the solubility of Mg and Ti, which leads to reduced electron effective mass and therefore increased electron mobility; (2) It tunes the carrier density and therefore allows the optimization of electrical conductivity; and (3) It reduces the density of charged defects and therefore reduces carrier recombination. As a result, the Ti and Mg co-alloyed hematite thin films exhibit improved water oxidation photocurrent magnitudes as compared to pure hematite thin films. Our results suggest that charge-compensated co-alloying is a plausible approach for engineering hematite for the application of PEC water splitting.

Tang, H.; Yin, W. J.; Matin, M. A.; Wang, H.; Deutsch, T.; Al-Jassim, M. M.; Turner, J. A.; Yan, Y.

2012-04-01T23:59:59.000Z

195

Sputter deposition for multi-component thin films  

DOE Patents [OSTI]

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

Krauss, Alan R. (Plainfield, IL); Auciello, Orlando (Cary, NC)

1990-01-01T23:59:59.000Z

196

Sputter deposition for multi-component thin films  

DOE Patents [OSTI]

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

Krauss, A.R.; Auciello, O.

1990-05-08T23:59:59.000Z

197

THE RATCHETING OF COMPRESSED THERMALLY GROWN THIN FILMS ON DUCTILE SUBSTRATES  

E-Print Network [OSTI]

THE RATCHETING OF COMPRESSED THERMALLY GROWN THIN FILMS ON DUCTILE SUBSTRATES M. Y. HE1 , A. G by oxidation of the substrate. It is shown that, in some circumstances, ratcheting occurs, wherein which ratcheting does not occur. This critical size is related to the expansion mis®t, the substrate

Hutchinson, John W.

198

Realizing high-voltage thin film lateral bipolar transistors on SOI with a collector-tub  

E-Print Network [OSTI]

Realizing high-voltage thin film lateral bipolar transistors on SOI with a collector-tub Sukhendu-dimensional device simulation to examine the effect of a collector tub on the collector breakdown of the SOI based BJTs. This method involves creating a collector tub by etching the buried oxide followed by an n

Kumar, M. Jagadesh

199

Monitoring plasma treatment of thin films by surface plasmon resonance  

SciTech Connect (OSTI)

We report the surface plasmon resonance (SPR) measurements during plasma treatment of thin films by an indigenously designed setup. From the measurements on Al (6.3 nm)/Ag (38 nm) bi-layer at a pressure of 0.02 mbar, the SPR position was found to be shifted by ?20° after a plasma treatment of ?7 h. The formation of oxide layers during plasma oxidation was confirmed by glancing angle x-ray diffraction (GXRD) measurements. Combined analysis of GXRD and SPR data confirmed that while top Al layer enables controlling plasma oxidation of Ag, the setup enables monitoring the same. The setup designed is a first of its kind for in situ SPR studies where creation of low pressure is a prerequisite.

Laha, Ranjit, E-mail: laharanjit@gmail.com [Department of Physics, National Institute of Technology Raipur, 492010 Raipur (India)] [Department of Physics, National Institute of Technology Raipur, 492010 Raipur (India); Manivannan, A. [US Department of Energy, National Energy Technology Laboratory, Morgantown, West Virginia 26507 (United States)] [US Department of Energy, National Energy Technology Laboratory, Morgantown, West Virginia 26507 (United States); Kasiviswanathan, S. [Department of Physics, Indian Institute of Technology Madras, 600036 Chennai (India)] [Department of Physics, Indian Institute of Technology Madras, 600036 Chennai (India)

2014-03-15T23:59:59.000Z

200

Electrochromism in copper oxide thin films  

E-Print Network [OSTI]

by a variety of routes, and electrochromic behavior has beenof Cu x O films, electrochromic devices based onbeen investigated. Unlike electrochromic devices based on

Richardson, Thomas J.; Slack, Jonathan L.; Rubin, Michael D.

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Doping in Zinc Oxide Thin Films  

E-Print Network [OSTI]

potential applications in optoelectronics and spintronics.applications in optoelectronics, such as light emitting

Yang, Zheng

2009-01-01T23:59:59.000Z

202

Order on disorder: Copper phthalocyanine thin films on technical substrates  

SciTech Connect (OSTI)

We have studied the molecular orientation of the commonly used organic semiconductor copper phthalocyanine (CuPC) grown as thin films on the technically relevant substrates indium tin oxide, oxidized Si, and polycrystalline gold using polarization-dependent x-ray absorption spectroscopy, and compare the results with those obtained from single crystalline substrates [Au(110) and GeS(001)]. Surprisingly, the 20{endash}50 nm thick CuPC films on the technical substrates are as highly ordered as on the single crystals. Importantly, however, the molecular orientation in the two cases is radically different: the CuPC molecules stand on the technical substrates and lie on the single crystalline substrates. The reasons for this and its consequences for our understanding of the behavior of CuPC films in devices are discussed. {copyright} 2001 American Institute of Physics.

Peisert, H.; Schwieger, T.; Auerhammer, J. M.; Knupfer, M.; Golden, M. S.; Fink, J.; Bressler, P. R.; Mast, M.

2001-07-01T23:59:59.000Z

203

Polycrystalline thin films FY 1992 project report  

SciTech Connect (OSTI)

This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

Zweibel, K. [ed.

1993-01-01T23:59:59.000Z

204

Electrostatic thin film chemical and biological sensor  

DOE Patents [OSTI]

A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

Prelas, Mark A. (Columbia, MO); Ghosh, Tushar K. (Columbia, MO); Tompson, Jr., Robert V. (Columbia, MO); Viswanath, Dabir (Columbia, MO); Loyalka, Sudarshan K. (Columbia, MO)

2010-01-19T23:59:59.000Z

205

Thin film photovoltaic panel and method  

DOE Patents [OSTI]

A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

Ackerman, Bruce (El Paso, TX); Albright, Scot P. (El Paso, TX); Jordan, John F. (El Paso, TX)

1991-06-11T23:59:59.000Z

206

Influence of Boron doping on the structural, optical and electrical properties of CdO thin films by spray pyrolysis technique  

SciTech Connect (OSTI)

Cadmium oxide and Boron (B) doped Cadmium oxide thin films were deposited using spray pyrolysis technique. The structural, morphological, electrical and optical properties of undoped and B doped CdO films are analyzed by varying the dopant concentration in the solution. The structural study shows the polycrystalline nature and cubic structure of undoped and B doped CdO thin films. Surface morphological study reveals that the grains are spherical in shape. Optical and electrical studies showed n-type semiconducting nature and optical band gap of 2.44 eV of deposited thin films.

Velusamy, P., E-mail: rampap2k@yahoo.co.in; Babu, R. Ramesh, E-mail: rampap2k@yahoo.co.in [Crystal Growth and Thin Films Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli- 620024, Tamil Nadu (India); Ramamurthi, K. [Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur - 603203, Tamil Nadu (India)

2014-04-24T23:59:59.000Z

207

Packaging material for thin film lithium batteries  

DOE Patents [OSTI]

A thin film battery including components which are capable of reacting upon exposure to air and water vapor incorporates a packaging system which provides a barrier against the penetration of air and water vapor. The packaging system includes a protective sheath overlying and coating the battery components and can be comprised of an overlayer including metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-metal-ceramic combination.

Bates, John B. (116 Baltimore Dr., Oak Ridge, TN 37830); Dudney, Nancy J. (11634 S. Monticello Rd., Knoxville, TN 37922); Weatherspoon, Kim A. (223 Wadsworth Pl., Oak Ridge, TN 37830)

1996-01-01T23:59:59.000Z

208

Anomalous Chemical Expansion Behavior of Pr[subscript 0.2]Ce[subscript 0.8]O[subscript 2-?] Thin Films Grown by Pulsed Laser Deposition  

E-Print Network [OSTI]

The chemomechanical and electrical properties of (Pr,Ce)O[subscript 2-?] thin films were studied between 30 and 875°C in air by in situ X-ray diffraction and complex impedance spectroscopy measurements. Reduction/oxidation ...

Kuru, Y.

209

Characterization and control of non-stoichiometry in Pr?.?Ce?.?O?-[d?e?l?t?a?] thin films : correlation with SOFC electrode performance  

E-Print Network [OSTI]

While the properties of functional oxide thin films often depend strongly on oxygen nonstoichiometry (6), there have been few means available for its measurement and control in a reliable and in-situ fashion. In this work, ...

Chen, Di, Ph. D. Massachusetts Institute of Technology

2014-01-01T23:59:59.000Z

210

Channel cracks in atomic-layer and molecular-layer deposited multilayer thin film coatings  

SciTech Connect (OSTI)

Metal oxide thin film coatings produced by atomic layer deposition have been shown to be an effective permeation barrier. The primary failure mode of such coatings under tensile loads is the propagation of channel cracks that penetrate vertically into the coating films. Recently, multi-layer structures that combine the metal oxide material with relatively soft polymeric layers produced by molecular layer deposition have been proposed to create composite thin films with desired properties, including potentially enhanced resistance to fracture. In this paper, we study the effects of layer geometry and material properties on the critical strain for channel crack propagation in the multi-layer composite films. Using finite element simulations and a thin-film fracture mechanics formalism, we show that if the fracture energy of the polymeric layer is lower than that of the metal oxide layer, the channel crack tends to penetrate through the entire composite film, and dividing the metal oxide and polymeric materials into thinner layers leads to a smaller critical strain. However, if the fracture energy of the polymeric material is high so that cracks only run through the metal oxide layers, more layers can result in a larger critical strain. For intermediate fracture energy of the polymer material, we developed a design map that identifies the optimal structure for given fracture energies and thicknesses of the metal oxide and polymeric layers. These results can facilitate the design of mechanically robust permeation barriers, an important component for the development of flexible electronics.

Long, Rong, E-mail: rlongmech@gmail.com [Department of Mechanical Engineering, University of Alberta, Edmonton, Alberta T6G 2G8 (Canada); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Dunn, Martin L. [Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Singapore University of Technology and Design, Singapore 138682 (Singapore)

2014-06-21T23:59:59.000Z

211

Rechargeable thin film battery and method for making the same  

DOE Patents [OSTI]

A rechargeable, stackable, thin film, solid-state lithium electrochemical cell, thin film lithium battery and method for making the same is disclosed. The cell and battery provide for a variety configurations, voltage and current capacities. An innovative low temperature ion beam assisted deposition method for fabricating thin film, solid-state anodes, cathodes and electrolytes is disclosed wherein a source of energetic ions and evaporants combine to form thin film cell components having preferred crystallinity, structure and orientation. The disclosed batteries are particularly useful as power sources for portable electronic devices and electric vehicle applications where high energy density, high reversible charge capacity, high discharge current and long battery lifetimes are required.

Goldner, Ronald B.; Liu, Te-Yang; Goldner, Mark A.; Gerouki, Alexandra; Haas, Terry E.

2006-01-03T23:59:59.000Z

212

Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization  

E-Print Network [OSTI]

Research, Thin-Film Photovoltaic (PV) Cells Market Analysiscost of photovoltaic systems (such as solar cells) due tosolar cells are created by depositing layers of photovoltaic

Bielecki, Anthony

2013-01-01T23:59:59.000Z

213

Institute of Photo Electronic Thin Film Devices and Technology...  

Open Energy Info (EERE)

Technology of Nankai University Place: Tianjin Municipality, China Zip: 300071 Sector: Solar Product: A thin-film solar cell research institute in China. References: Institute...

214

applications thin film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Nikolay 27 Solvent-enhanced dye diffusion in polymer thin films for polymer light-emitting diode application Engineering Websites Summary: Solvent-enhanced dye diffusion in...

215

Low-Cost Light Weigh Thin Film Solar Concentrators  

Broader source: Energy.gov (indexed) [DOE]

Light Weight Thin Film Solar Concentrators PI: Gani B. Ganapathi (JPLCaltech) Other Contributors: L'Garde: Art Palisoc, Gyula Greschik, Koorosh Gidanian JPL: Bill Nesmith,...

216

antibacterial thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Skovlin, Dean Oliver 2012-06-07 138 Uncooled Thin Film Pyroelectric IR Detector with Aerogel Thermal Isolation CiteSeer Summary: Uncooled pyroelectric IR imaging systems, such...

217

acid thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

218

almgb14 thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

219

aggase2 thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

220

ablation thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

aln thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

deposited by the reactive dc magnetron sputtering technique at room, amorphous and polycrystalline GaN thin films have been deposited using the magnetron sputtering...

222

anatase thin film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

223

area thin film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

224

aluminide thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

225

antiferroelectric thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

226

ain thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

227

advanced thin film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

228

arsenide thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

229

Uncooled thin film pyroelectric IR detector with aerogel thermal isolation  

SciTech Connect (OSTI)

A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.

Ruffner, Judith A. (Albuquerque, NM); Bullington, Jeff A. (Albuquerque, NM); Clem, Paul G. (Albuquerque, NM); Warren, William L. (Albuquerque, NM); Brinker, C. Jeffrey (Albuquerque, NM); Tuttle, Bruce A. (Albuquerque, NM); Schwartz, Robert W. (Seneca, SC)

1999-01-01T23:59:59.000Z

230

Thickness Dependency of Thin Film Samaria Doped Ceria for Oxygen...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

High temperature oxygen sensors are widely used for exhaust gas monitoring in automobiles. This particular study explores the use of thin film single crystalline samaria...

231

Long-laser-pulse method of producing thin films  

DOE Patents [OSTI]

A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agen The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.

Balooch, Mehdi (Berkeley, CA); Olander, Donald K. (Berkeley, CA); Russo, Richard E. (Walnut Creek, CA)

1991-01-01T23:59:59.000Z

232

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers  

DOE Patents [OSTI]

A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

Simpson, Lin Jay

2013-12-17T23:59:59.000Z

233

Thin film seeds for melt processing textured superconductors for practical applications  

DOE Patents [OSTI]

A method of fabricating bulk superconducting material such as RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} where R is La or Y comprising depositing a thin epitaxially oriented film of Nd or Sm (123) on an oxide substrate is disclosed. The powder oxides of RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} or oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}, where R is Y or La are heated, in physical contact with the thin film of Nd or Sm (123) on the oxide substrate to a temperature sufficient to form a liquid phase in the oxide or carbonate mixture while maintaining the thin film solid to grow a large single domain 123 superconducting material. Then the material is cooled. The thin film is between 200 {angstrom} and 2000 {angstrom}. A construction prepared by the method is also disclosed.

Veal, B.W.; Paulikas, A.; Balachandran, U.; Zhong, W.

1999-02-09T23:59:59.000Z

234

Thin film seeds for melt processing textured superconductors for practical applications  

DOE Patents [OSTI]

A method of fabricating bulk superconducting material such as RBa.sub.2 Cu.sub.3 O.sub.7-.delta. where R is La or Y comprising depositing a thin epitaxially oriented film of Nd or Sm (123) on an oxide substrate. The powder oxides of RBa.sub.2 Cu.sub.3 O.sub.7-.delta. or oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa.sub.2 Cu.sub.3 O.sub.7-.delta., where R is Y or La are heated, in physical contact with the thin film of Nd or Sm (123) on the oxide substrate to a temperature sufficient to form a liquid phase in the oxide or carbonate mixture while maintaining the thin film solid to grow a large single domain 123 superconducting material. Then the material is cooled. The thin film is between 200 .ANG. and 2000 .ANG.. A construction prepared by the method is also disclosed.

Veal, Boyd W. (Downers Grove, IL); Paulikas, Arvydas (Downers Grove, IL); Balachandran, Uthamalingam (Hinsdale, IL); Zhong, Wei (West Lafayette, IN)

1999-01-01T23:59:59.000Z

235

Thin film photovoltaic device with multilayer substrate  

DOE Patents [OSTI]

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Catalano, Anthony W. (Rushland, PA); Bhushan, Manjul (Wilmington, DE)

1984-01-01T23:59:59.000Z

236

Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics  

E-Print Network [OSTI]

nanowire networks as window layers in thin film solar cells.window layer for fully solution-deposited thin filmITO) thin films by silver nanowire composite window layers

Chung, Choong-Heui

2012-01-01T23:59:59.000Z

237

Synthesis and application perspective of advanced plasma polymerized organic thin films  

E-Print Network [OSTI]

Synthesis and application perspective of advanced plasma polymerized organic thin films I.-S. Bae a November 2005 Abstract Plasma polymerized cyclohexane and ethylcyclohexane organic thin films were rights reserved. Keywords: Plasma polymerization; Ethylcyclohexane and cyclohexane organic thin films

Boo, Jin-Hyo

238

Neutron Compton scattering from hydrogen and perovskite oxide interfaces.  

E-Print Network [OSTI]

??In this thesis we investigate two independent topics: neutron Compton scattering from hydrogen and perovskite oxide interfaces. Part one is an investigation of the scattering… (more)

Lemon, Christopher P.

2010-01-01T23:59:59.000Z

239

Adhesion and Thin-Film Module Reliability: Preprint  

SciTech Connect (OSTI)

Among the infrequently measured but essential properties for thin-film (T-F) module reliability are the interlayer adhesion and cohesion within a layer. These can be cell contact layers to glass, contact layers to the semiconductor, encapsulant to cell, glass, or backsheet, etc. We use an Instron mechanical testing unit to measure peel strengths at 90{sup o} or 180{sup o} and, in some cases, a scratch and tape pull test to evaluate inter-cell layer adhesion strengths. We present peel strength data for test specimens laminated from the three T-F technologies, before and after damp heat, and in one instance at elevated temperatures. On laminated T-F cell samples, failure can occur uniformly at any one of the many interfaces, or non-uniformly across the peel area at more than one interface. Some peel strengths are << 1 N/mm. This is far below the normal Instron mechanical testing unit Instron mechanical testing unit; glass interface values of >10 N/mm. We measure a wide range of adhesion strengths and suggest that adhesion measured under higher temperature and relative humidity conditions is more relevant for module reliability.

McMahon, T. J.; Jorgensen, G. J.

2006-05-01T23:59:59.000Z

240

Influence of oxygen on the interfacial stability of Cu on Co,,0001... thin films Hongmei Wen,1 Matthew Neurock,1,  

E-Print Network [OSTI]

Influence of oxygen on the interfacial stability of Cu on Co,,0001... thin films Hongmei Wen,1 of oxygen, which can impact the quality of film and its properties. Previously we found that oxygen to examine the effects of surface atomic oxygen on the stability of the Cu 111 /Co 0001 interface

Wadley, Haydn

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Method of physical vapor deposition of metal oxides on semiconductors  

DOE Patents [OSTI]

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Norton, David P. (Knoxville, TN)

2001-01-01T23:59:59.000Z

242

Apparatus for laser assisted thin film deposition  

DOE Patents [OSTI]

A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

Warner, B.E.; McLean, W. II

1996-02-13T23:59:59.000Z

243

Apparatus for laser assisted thin film deposition  

DOE Patents [OSTI]

A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

Warner, Bruce E. (Pleasanton, CA); McLean, II, William (Oakland, CA)

1996-01-01T23:59:59.000Z

244

Rechargeable thin-film lithium batteries  

SciTech Connect (OSTI)

Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

1993-09-01T23:59:59.000Z

245

Avalanches through windows: Multiscale visualization in magnetic thin films  

E-Print Network [OSTI]

Avalanches through windows: Multiscale visualization in magnetic thin films Alessandro Magni, Cornell University, Ithaca, NY 14853-2501 Abstract--The dynamics of domain walls motion in thin films dynamics, but are strongly dependent on the size of the windows chosen. Here we investigate how to properly

Sethna, James P.

246

Fracture patterns in thin films and multilayers Alex A. Volinsky  

E-Print Network [OSTI]

Fracture patterns in thin films and multilayers Alex A. Volinsky University of South Florida, excessive residual and externally applied stresses cause film fracture. In the case of tensile stress is the key for causing thin film fracture, either in tension, or compression, it is the influence

Volinsky, Alex A.

247

A survey of thin-film solar photovoltaic industry & technologies  

E-Print Network [OSTI]

A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

Grama, Sorin

2007-01-01T23:59:59.000Z

248

Wave propagation in highly inhomogeneous thin films: exactly solvable models  

E-Print Network [OSTI]

Wave propagation in highly inhomogeneous thin films: exactly solvable models Guillaume Petite(1 of wave propagation in some inhomogeneous thin films with highly space- dependent dielectric constant will show that depending on the type of space dependence, an incident wave can either propagate or tunnel

Boyer, Edmond

249

E-Print Network 3.0 - alumina thin films Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

constant in RF devices. Some unique features of thin-film silica and alumina aerogels have been... aerogel thin films, silica and alumina aerogel cantilevers were...

250

Highly conducting SrMoO{sub 3} thin films for microwave applications  

SciTech Connect (OSTI)

We have measured the microwave resistance of highly conducting perovskite oxide SrMoO{sub 3} thin film coplanar waveguides. The epitaxial SrMoO{sub 3} thin films were grown by pulsed laser deposition and showed low mosaicity and smooth surfaces with a root mean square roughness below 0.3?nm. Layer-by-layer growth could be achieved for film thicknesses up to 400?nm as monitored by reflection high-energy electron diffraction and confirmed by X-ray diffraction. We obtained a constant microwave resistivity of 29???·cm between 0.1 and 20?GHz by refining the frequency dependence of the transmission coefficients. Our result shows that SrMoO{sub 3} is a viable candidate as a highly conducting electrode material for all-oxide microwave electronic devices.

Radetinac, Aldin, E-mail: aldin@oxide.tu-darmstadt.de; Mani, Arzhang; Ziegler, Jürgen; Alff, Lambert; Komissinskiy, Philipp, E-mail: komissinskiy@oxide.tu-darmstadt.de [Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany); Melnyk, Sergiy; Nikfalazar, Mohammad; Zheng, Yuliang; Jakoby, Rolf [Institute for Microwave Engineering and Photonics, TU Darmstadt, Merckstraße 25, 64283 Darmstadt (Germany)

2014-09-15T23:59:59.000Z

251

335Nanostructured ZnO and ZAO transparent thin films by sputteringsurface characterization Corresponding author: M. Suchea, e-mail: mirasuchea@iesl.forth.gr  

E-Print Network [OSTI]

as transparent electrode in solar cells and flat panel displays as well as for the fabrication of gratings Abstract. Zinc oxide (ZnO) and aluminum zinc oxide (ZAO) transparent thin films with different thickness Zinc oxide is one of the earliest discovered metal oxide gas sensing materials. It is an n-type semi

252

Glow discharge plasma deposition of thin films  

DOE Patents [OSTI]

A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

Weakliem, Herbert A. (Pennington, NJ); Vossen, Jr., John L. (Bridgewater, NJ)

1984-05-29T23:59:59.000Z

253

Rechargeable thin-film electrochemical generator  

DOE Patents [OSTI]

An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

Rouillard, Roger (Beloeil, CA); Domroese, Michael K. (South St. Paul, MN); Hoffman, Joseph A. (Minneapolis, MN); Lindeman, David D. (Hudson, WI); Noel, Joseph-Robert-Gaetan (St-Hubert, CA); Radewald, Vern E. (Austin, TX); Ranger, Michel (Lachine, CA); Sudano, Anthony (Laval, CA); Trice, Jennifer L. (Eagan, MN); Turgeon, Thomas A. (Fridley, MN)

2000-09-15T23:59:59.000Z

254

Thin films of mixed metal compounds  

DOE Patents [OSTI]

Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

Mickelsen, R.A.; Chen, W.S.

1985-06-11T23:59:59.000Z

255

Thin Film Femtosecond Laser Damage Competition  

SciTech Connect (OSTI)

In order to determine the current status of thin film laser resistance within the private, academic, and government sectors, a damage competition was started at the 2008 Boulder Damage Symposium. This damage competition allows a direct comparison of the current state of the art of high laser resistance coatings since they are tested using the same damage test setup and the same protocol. In 2009 a high reflector coating was selected at a wavelength of 786 nm at normal incidence at a pulse length of 180 femtoseconds. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials and layer count, and spectral results will also be shared.

Stolz, C J; Ristau, D; Turowski, M; Blaschke, H

2009-11-14T23:59:59.000Z

256

THIN FILM SOLAR CELLS AND A REVIEW OF RECENT RESULTS ON GaAs By PAUL RAPPAPORT,  

E-Print Network [OSTI]

154. THIN FILM SOLAR CELLS AND A REVIEW OF RECENT RESULTS ON GaAs By PAUL RAPPAPORT, RCA been known that non-single- crystals films can be used for solar cells as, for example, in the selenium and copper oxide photo- electric exposnre meter. More recently [1], the cadmium sulfide film-type solar cell

Paris-Sud XI, Université de

257

ZnO transparent thin films for gas sensor applications M. Suchea a,b,, S. Christoulakis a,b  

E-Print Network [OSTI]

in solar cells and flat panel displays as well as for the fabrication of gratings in optoelectronic de analysis of thin films sputtered from a ceramic target has shown a completely different surface behavior of the earliest discovered metal oxide gas sensing materials. It is an n-type semiconductor of wurtzite structure

258

Structure, defects, and strain in silicon-silicon oxide interfaces  

SciTech Connect (OSTI)

The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

Kova?evi?, Goran, E-mail: gkova@irb.hr; Pivac, Branko [Department of Materials Physics, Rudjer Boskovic Institute, Bijeni?ka 56, P.O.B. 180, HR-10002 Zagreb (Croatia)

2014-01-28T23:59:59.000Z

259

Enhanced stimulated emission in ZnO thin films using microdisk top-down structuring  

SciTech Connect (OSTI)

Microdisks were fabricated in zinc oxide (ZnO) thin films using a top-down approach combining electron beam lithography and reactive ion etching. These microdisk structured thin films exhibit a stimulated surface emission between 3 and 7 times higher than that from a reference film depending on the excitation power density. Emission peak narrowing, reduction in lasing threshold and blue-shifting of the emission wavelength were observed along with enhancement in the emitted intensity. Results indicate that this enhancement is due to an increase in the internal quantum efficiency combined with an amplification of the stimulated emission. An analysis in terms of waveguiding is presented in order to explain these effects. These results demonstrate that very significant gains in emission can be obtained through conventional microstructuration without the need for more onerous top-down nanostructuration techniques.

Nomenyo, K.; Kostcheev, S.; Lérondel, G. [Laboratoire de Nanotechnologie et d'Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Gadallah, A.-S. [Laboratoire de Nanotechnologie et d'Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Department of Laser Sciences and Interactions, National Institute of Laser Enhanced Sciences, Cairo University, Giza (Egypt); Rogers, D. J. [Nanovation, 8, route de Chevreuse, 78117 Châteaufort (France)

2014-05-05T23:59:59.000Z

260

Momentum transfer driven textural changes of CeO{sub 2} thin films  

SciTech Connect (OSTI)

The influence of the target erosion depth on the film texture was investigated during DC reactive magnetron sputter deposition of CeO{sub 2} thin films. Three fluxes towards the substrate surface (the relative negative oxygen ion flux, the material flux, and the energy flux) were measured and related to the ongoing erosion of a cerium target. As the deposition rate increased for more eroded targets, both the energy flux and the negative ion flux decreased. Cerium oxide thin films that were deposited at different target erosion states, exhibited a change in preferential crystalline orientation from [200] to [111]. This textural change cannot be explained in terms of the energy per arriving atom concept. Instead, it is shown that the momentum of the high energetic negative ions is an essential condition to clarify the witnessed trends.

Van Steenberge, S., E-mail: sigelinde.vansteenberge@ugent.be; Leroy, W. P.; Depla, D. [Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, 9000 Ghent (Belgium); Hubin, A. [Department of Materials and Chemistry, Vrije Universiteit Brussel, Pleinlaan 2, 1050 Brussels (Belgium)

2014-09-15T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Process for producing Ti-Cr-Al-O thin film resistors  

DOE Patents [OSTI]

Thin films of Ti-Cr-Al-O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti-Cr-Al-O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti-Cr-Al-O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti-Cr-Al-O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Jankowski, Alan F. (Livermore, CA); Schmid, Anthony P. (Solana Beach, CA)

2001-01-01T23:59:59.000Z

262

Flat panel display using Ti-Cr-Al-O thin film  

DOE Patents [OSTI]

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Jankowski, Alan F. (Livermore, CA); Schmid, Anthony P. (Solan Beach, CA)

2002-01-01T23:59:59.000Z

263

Synthesis and characterization of titanium-alloyed hematite thin films for photoelectrochemical water splitting  

SciTech Connect (OSTI)

We have synthesized pure and Ti-alloyed hematite thin films on F doped SnO{sub 2} coated glass substrates by radio frequency magnetron co-sputtering of iron oxide and titanium targets in mixed Ar/O{sub 2} and mixed N{sub 2}/O{sub 2} ambient. We found that the hematite films deposited in the N{sub 2}/O{sub 2} ambient exhibit much poorer crystallinity than the films deposited in the Ar/O{sub 2} ambient. We determined that Ti alloying leads to increased electron carrier concentration and crystallinity, and reduced bandgaps. Moreover, Ti-alloyed hematite thin films exhibited improved photoelectrochemical performance as compared with the pure hematite films: The photocurrents were enhanced and the photocurrent onset shifted to less positive potentials.

Tang Houwen [National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States); University of Denver, Electrical Engineering Department, 2390 S. York Street, Denver, Colorado 80210 (United States); Matin, M. A. [University of Denver, Electrical Engineering Department, 2390 S. York Street, Denver, Colorado 80210 (United States); Wang, Heli; Deutsch, Todd; Al-Jassim, Mowafak; Turner, John; Yan, Yanfa [National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

2011-12-15T23:59:59.000Z

264

Synthesis and Characterization of Titanium-Alloyed Hematite Thin Films for Photoelectrochemical Water Splitting  

SciTech Connect (OSTI)

We have synthesized pure and Ti-alloyed hematite thin films on F doped SnO{sub 2} coated glass substrates by radio frequency magnetron co-sputtering of iron oxide and titanium targets in mixed Ar/O{sub 2} and mixed N{sub 2}/O{sub 2} ambient. We found that the hematite films deposited in the N{sub 2}/O{sub 2} ambient exhibit much poorer crystallinity than the films deposited in the Ar/O{sub 2} ambient. We determined that Ti alloying leads to increased electron carrier concentration and crystallinity, and reduced bandgaps. Moreover, Ti-alloyed hematite thin films exhibited improved photoelectrochemical performance as compared with the pure hematite films: The photocurrents were enhanced and the photocurrent onset shifted to less positive potentials.

Tang, H.; Matin, M. A.; Wang, H.; Deutsch, T.; Al-Jassim, M.; Turner, J.; Yan, Y.

2011-12-15T23:59:59.000Z

265

Structural, magnetic, and electronic properties of GdTiO{sub 3} Mott insulator thin films grown by pulsed laser deposition  

SciTech Connect (OSTI)

We report on the optimization process to synthesize epitaxial thin films of GdTiO{sub 3} on SrLaGaO{sub 4} substrates by pulsed laser deposition. Optimized films are free of impurity phases and are fully strained. They possess a magnetic Curie temperature T{sub C}?=?31.8?K with a saturation magnetization of 4.2??{sub B} per formula unit at 10?K. Transport measurements reveal an insulating response, as expected. Optical spectroscopy indicates a band gap of ?0.7?eV, comparable to the bulk value. Our work adds ferrimagnetic orthotitanates to the palette of perovskite materials for the design of emergent strongly correlated states at oxide interfaces using a versatile growth technique such as pulsed laser deposition.

Grisolia, M. N.; Bruno, F. Y.; Sando, D.; Jacquet, E.; Barthélémy, A.; Bibes, M., E-mail: manuel.bibes@thalesgroup.com [Unité Mixte de Physique, CNRS-Thales, 1 Av. Augustin Fresnel, Campus de l'Ecole Polytechnique, 91120 Palaiseau, France and Université Paris-Sud, 91405 Orsay (France); Zhao, H. J. [Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Chen, X. M. [Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Bellaiche, L. [Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States)

2014-10-27T23:59:59.000Z

266

Focused ion beam specimen preparation for electron holography of electrically biased thin film solar cells  

E-Print Network [OSTI]

, biased TEM specimen, thin film solar cell, FIB Thin films of hydrogenated Si (Si:H) can be used as active for electron holography of a thin film solar cell using conventional lift-out specimen preparation and a homeFocused ion beam specimen preparation for electron holography of electrically biased thin film

Dunin-Borkowski, Rafal E.

267

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

268

Bulge testing of single and dual layer thin films Dryver R. Huston*ab  

E-Print Network [OSTI]

to a thin film window. By comparing the pressure- displacement relation with a mechanical model, the elastic structures, such as the thin film windows that are used in Next Generation Lithography masks and certain MEMS it in a thin film window. Thin film windows are fabricated by removing the thick substrate out from underneath

Huston, Dryver R.

269

Antimony-Doped Tin(II) Sulfide Thin Films  

E-Print Network [OSTI]

Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin ...

Chakraborty, Rupak

270

A Review of Thin Film Silicon for Solar Cell Applications  

E-Print Network [OSTI]

A Review of Thin Film Silicon for Solar Cell Applications May 99 Contents 1 Introduction 3 2 Low 2.2.3 Deposition onto foreign substrates with the intention of improving crystallographic nature Field Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 11

271

Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)  

SciTech Connect (OSTI)

Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

Not Available

2011-06-01T23:59:59.000Z

272

Structural, magnetic, and optical properties of orthoferrite thin films  

E-Print Network [OSTI]

Pulsed laser deposition was used to create thin films of Ce-Fe-O and Y-Fe-O systems. Deposition temperature and ambient oxygen pressure were varied systematically between samples to determine which deposition conditions ...

Supplee, William Wagner

2007-01-01T23:59:59.000Z

273

Modeling of thin-film solar thermoelectric generators  

E-Print Network [OSTI]

Recent advances in solar thermoelectric generator (STEG) performance have raised their prospect as a potential technology to convert solar energy into electricity. This paper presents an analysis of thin-film STEGs. ...

Weinstein, Lee Adragon

274

Fluorination of amorphous thin-film materials with xenon fluoride  

DOE Patents [OSTI]

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

Weil, R.B.

1987-05-01T23:59:59.000Z

275

Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)  

SciTech Connect (OSTI)

This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

Not Available

2013-06-01T23:59:59.000Z

276

Multimonth controlled small molecule release from biodegradable thin films  

E-Print Network [OSTI]

Long-term, localized delivery of small molecules from a biodegradable thin film is challenging owing to their low molecular weight and poor charge density. Accomplishing highly extended controlled release can facilitate ...

Hammond, Paula T.

277

amorphous thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Amorphous Silicon Thin-Film Transistor Pixel.S.A. 1 LG Philips LCD Research and Development Center, An-Yang, 431-080, Korea (Received July 23, 2006; accepted October 31, 2006;...

278

amorphous thin film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Amorphous Silicon Thin-Film Transistor Pixel.S.A. 1 LG Philips LCD Research and Development Center, An-Yang, 431-080, Korea (Received July 23, 2006; accepted October 31, 2006;...

279

Initiated chemical vapor deposition of functional polyacrylic thin films  

E-Print Network [OSTI]

Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

Mao, Yu, 1975-

2005-01-01T23:59:59.000Z

280

al thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

dalek@eee.hku.hk , C. Y. Kwong, T. W. Lau, L. S. M. Lam, and W. K 276 DEFECT-FREE THIN FILM MEMBRANES FOR H2 SEPARATION AND ISOLATION Energy Storage, Conversion and...

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

al thin film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

dalek@eee.hku.hk , C. Y. Kwong, T. W. Lau, L. S. M. Lam, and W. K 276 DEFECT-FREE THIN FILM MEMBRANES FOR H2 SEPARATION AND ISOLATION Energy Storage, Conversion and...

282

Monolithic integration of thin-film coolers with optoelectronic devices  

E-Print Network [OSTI]

Monolithic integration of thin-film coolers with optoelectronic devices Christopher La Barbara, California 93106-9560 Abstract. Active refrigeration of optoelectronic components through the use manuscript received June 30, 2000; accepted for publication June 30, 2000. 1 Introduction Optoelectronic

283

Role of Microstructural Phenomena in Magnetic Thin Films. Final Report  

SciTech Connect (OSTI)

Over the period of the program we systematically varied microstructural features of magnetic thin films in an attempt to better identify the role which each feature plays in determining selected extrinsic magnetic properties. This report summarizes the results.

Laughlin, D. E.; Lambeth, D. N.

2001-04-30T23:59:59.000Z

284

Self-Assembling Process for Fabricating Tailored Thin Films  

ScienceCinema (OSTI)

A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

Sandia

2009-09-01T23:59:59.000Z

285

Self-Assembling Process for Fabricating Tailored Thin Films  

ScienceCinema (OSTI)

A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

None

2010-01-08T23:59:59.000Z

286

Orientational Analysis of Molecules in Thin Films | Stanford...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Orientational Analysis of Molecules in Thin Films Monday, September 17, 2012 - 10:00am SSRL Bldg. 137, room 226 Daniel Kaefer The synchrotron-based X-ray absorption spectroscopy is...

287

National High Magnetic Field Laboratory: Magnetic Thin Films  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

recorded work with magnetic thin films took place in the 1880s and was carried out by German physicist August Kundt. Well known for his research on sound and optics, Kundts...

288

Enabling integration of vapor-deposited polymer thin films  

E-Print Network [OSTI]

Initiated Chemical Vapor Deposition (iCVD) is a versatile, one-step process for synthesizing conformal and functional polymer thin films on a variety of substrates. This thesis emphasizes the development of tools to further ...

Petruczok, Christy D. (Christy Danielle)

2014-01-01T23:59:59.000Z

289

Method for making surfactant-templated thin films  

DOE Patents [OSTI]

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (New Orleans, LA); Fan, Hong You (Albuquerque, NM)

2010-08-31T23:59:59.000Z

290

Method for making surfactant-templated thin films  

DOE Patents [OSTI]

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

2002-01-01T23:59:59.000Z

291

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network [OSTI]

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

292

Laser Induced Breakdown Spectroscopy and Applications Toward Thin Film Analysis  

E-Print Network [OSTI]

on the surface. Ultrafast laser pulses are shorter than thethe advantages of ultrafast laser pulses for thin film LIBS,each time. While ultrafast laser pulses are effective in

Owens, Travis Nathan

2011-01-01T23:59:59.000Z

293

ag thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

MgO, Ref. 21 Marcon, Marco 2 Multi-level surface enhanced Raman scattering using AgOx thin film Physics Websites Summary: by applying laser-direct writing (LDW) technique on...

294

Functionalized multilayer thin films for protection against acutely toxic agents  

E-Print Network [OSTI]

The recently developed practice of spraying polyelectrolyte solutions onto a substrate in order to construct thin films via the Layer-by-Layer (LbL) technique has been further investigated and extended. In this process a ...

Krogman, Kevin Christopher

2009-01-01T23:59:59.000Z

295

Direct printing of lead zirconate titanate thin films  

E-Print Network [OSTI]

Thus far, use of lead zirconate titanate (PZT) in MEMS has been limited due to the lack of process compatibility with existing MEMS manufacturing techniques. Direct printing of thin films eliminates the need for photolithographic ...

Bathurst, Stephen, 1980-

2008-01-01T23:59:59.000Z

296

AP-XPS Measures MIEC Oxides in Action  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

H2O electrolysis and H2 oxidation, dense thin-film CeO2-x electrodes with Au current collectors were deposited onto YSZ electrolytes with a thin-film Pt counter electrode. The...

297

Recent technological advances in thin film solar cells  

SciTech Connect (OSTI)

High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

Ullal, H.S.; Zwelbel, K.; Surek, T.

1990-03-01T23:59:59.000Z

298

Nonlinear viscoelastic characterization of thin films using dynamic mechanical analysis  

E-Print Network [OSTI]

NONLINEAR VISCOELASTIC CHARACTERIZATION OF THIN FILMS USING DYNAMIC MECHANICAL ANALYSIS A Thesis by DEBBIE FLOWERS PAYNE Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements... for the degree of MASTER OF SCIENCE AUGUST 1993 Major Subject: Aerospace Engineering NONLINEAR VISCOELASTIC CHARACTERIZATION OF THIN FILMS USING DYNAMIC MECHANICAL ANALYSIS A Thesis by DEBBIE FLOWERS PAYNE Approved as to style and content by: Thomas W...

Payne, Debbie Flowers

1993-01-01T23:59:59.000Z

299

Growth and characterization of Pt-protected Gd5Si4 thin films  

SciTech Connect (OSTI)

Successful growth and characterization of thin films of giant magnetocaloric Gd5(SixGe1?x)4 were reported in the literature with limited success. The inherent difficulty in producing this complex material makes it difficult to characterize all the phases present in the thin films of this material. Therefore, thin film of binary compound of Gd5Si4 was deposited by pulsed laser deposition. It was then covered with platinum on the top of the film to protect against any oxidation when the film was exposed to ambient conditions. The average film thickness was measured to be approximately 350?nm using a scanning electron microscopy, and the composition of the film was analyzed using energy dispersive spectroscopy. X-ray diffraction analysis indicates the presence of Gd5Si4 orthorhombic structure along with Gd5Si3 secondary phase. The transition temperature of the film was determined from magnetic moment vs. temperature measurement. The transition temperature was between 320 and 345?K which is close to the transition temperature of the bulk material. Magnetic moment vs. magnetic field measurement confirmed that the film was ferromagnetic below 342?K.

Hadimani, R. L.; Mudryk, Y.; Prost, T. E.; Pecharsky, V. K.; Gschneidner, K. A.; Jiles, D. C.

2014-05-07T23:59:59.000Z

300

Surface smoothing effect of an amorphous thin film deposited by atomic layer deposition on a surface with nano-sized roughness  

SciTech Connect (OSTI)

Previously, Lau (one of the authors) pointed out that the deposition of an amorphous thin film by atomic layer deposition (ALD) on a substrate with nano-sized roughness probably has a surface smoothing effect. In this letter, polycrystalline zinc oxide deposited by ALD onto a smooth substrate was used as a substrate with nano-sized roughness. Atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) were used to demonstrate that an amorphous aluminum oxide thin film deposited by ALD can reduce the surface roughness of a polycrystalline zinc oxide coated substrate.

Lau, W. S., E-mail: liuweicheng@zju.edu.cn; Wan, X.; Xu, Y.; Wong, H. [Zhejiang University, Department of Information Science and Electronic Engineering, No. 38 Zheda Road, Hangzhou 310027 (China)] [Zhejiang University, Department of Information Science and Electronic Engineering, No. 38 Zheda Road, Hangzhou 310027 (China); Zhang, J. [Zhejiang University, Department of Materials Science and Engineering, No. 38 Zheda Road, Hangzhou 310027 (China)] [Zhejiang University, Department of Materials Science and Engineering, No. 38 Zheda Road, Hangzhou 310027 (China); Luo, J. K. [Zhejiang University, Department of Information Science and Electronic Engineering, No. 38 Zheda Road, Hangzhou 310027 (China) [Zhejiang University, Department of Information Science and Electronic Engineering, No. 38 Zheda Road, Hangzhou 310027 (China); Institute of Renewable Energy and Environment Technology, Bolton University, Deane Road, Bolton BL3 5 AB (United Kingdom)

2014-02-15T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Picoseconds-Laser Modification of Thin Films  

SciTech Connect (OSTI)

The interaction of a Nd:YAG laser, pulse duration of 40 ps, with a titanium nitride (TiN) and tungsten-titanium (W-Ti) thin films deposited at silicon was studied. The peak intensity on targets was up to 1012 W/cm2. Results have shown that the TiN surface was modified, by the laser beam, with energy density of {>=}0.18 J/cm2 ({lambda}laser= 532 nm) as well as of 30.0 J/cm2 ({lambda}laser= 1064 nm). The W-Ti was surface modified with energy density of 5.0 J/cm2 ({lambda}laser= 532 nm). The energy absorbed from the Nd:YAG laser beam is partially converted to thermal energy, which generates a series of effects such as melting, vaporization of molten materials, dissociation and ionization of the vaporized material, appearance of plasma, etc. The following morphological changes of both targets were observed: (i) The appearance of periodic microstructures, in the central zone of the irradiated area, for laser irradiation at 532 nm. Accumulation of great number of laser pulses caused film ablation and silicon modification. (ii) Hole formation on the titanium nitride/silicon target was registered at 1064 nm. The process of the Nd:YAG laser interaction with both targets was accompanied by plasma formation above the target.

Gakovic, Biljana; Trtica, Milan [Institute of Nuclear Sciences 'VINCA' 522, 11001 Belgrade (Serbia and Montenegro); Batani, Dimitri; Desai, Tara; Redaelli, Renato [Dipartimento di Fisica 'G. Occhialini', Universita' degli Studi Milano-Bicocca, Piazza della Scienza 3, Milan 20126 (Italy)

2006-04-07T23:59:59.000Z

302

Controlled nanostructuration of polycrystalline tungsten thin films  

SciTech Connect (OSTI)

Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l'Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d'Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

2013-05-07T23:59:59.000Z

303

Josephson junction in a thin film  

SciTech Connect (OSTI)

The phase difference {phi}(y) for a vortex at a line Josephson junction in a thin film attenuates at large distances as a power law, unlike the case of a bulk junction where it approaches exponentially the constant values at infinities. The field of a Josephson vortex is a superposition of fields of standard Pearl vortices distributed along the junction with the line density {phi}'(y)/2{pi}. We study the integral equation for {phi}(y) and show that the phase is sensitive to the ratio l/{Lambda}, where l={lambda}{sub J}{sup 2}/{lambda}{sub L}, {Lambda}=2{lambda}{sub L}{sup 2}/d, {lambda}{sub L}, and {lambda}{sub J} are the London and Josephson penetration depths, and d is the film thickness. For l<<{Lambda}, the vortex ''core'' of the size l is nearly temperature independent, while the phase ''tail'' scales as l{Lambda}/y{sup 2}={lambda}{sub J}2{lambda}{sub L}/d/y{sup 2}; i.e., it diverges as T{yields}T{sub c}. For l>>{Lambda}, both the core and the tail have nearly the same characteristic length l{Lambda}.

Kogan, V. G.; Dobrovitski, V. V.; Clem, J. R.; Mawatari, Yasunori; Mints, R. G.

2001-04-01T23:59:59.000Z

304

In situ self-assembled organic interface layers for the controlled growth of oligothiophene thin films on ferroelectric Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}  

SciTech Connect (OSTI)

We introduce an in situ vacuum procedure for the optimal preparation and analysis of self-assembled monolayers (SAMs) as used in organic molecular electronics on ferroelectric lead zirconate titanate (PZT) substrates. Excellent ordering of oligothiophene semiconductor layers is heavily promoted through the presence of an interfacial bi-functional SAM layer that binds to both the oxidic PZT surface and the organic semiconductor molecules. The described method can be extended to other material combinations, featuring a variety of substrate materials and molecular functionalities.

Milde, P., E-mail: Peter.Milde@iapp.de; Zerweck-Trogisch, U.; Eng, L. M. [Institute of Applied Photophysics, Technische Universität Dresden, D-01062 Dresden (Germany)] [Institute of Applied Photophysics, Technische Universität Dresden, D-01062 Dresden (Germany); Schönfelder, R.; Koitzsch, A. [Institute for Solid State Research, IFW-Dresden, P.O. Box 270116, DE-01171 Dresden (Germany)] [Institute for Solid State Research, IFW-Dresden, P.O. Box 270116, DE-01171 Dresden (Germany); Haubner, K.; Jaehne, E. [Institute of Macromolecular Chemistry and Textile Chemistry, Technische Universität Dresden, D-01062 Dresden (Germany)] [Institute of Macromolecular Chemistry and Textile Chemistry, Technische Universität Dresden, D-01062 Dresden (Germany)

2013-12-07T23:59:59.000Z

305

Enhanced electrochromic property of nickel hydroxide thin films prepared by anodic deposition  

SciTech Connect (OSTI)

Nickel hydroxide and nickel oxide thin films have received much attention as electrochromic (EC) materials, particularly as the materials for a complementary counterlayer against an EC tungsten oxide layer in smart window systems. Nickel hydroxide thin films were prepared onto transparent conductive tin oxide (NESA) substrates by potentiostatic electrolysis of a nickel amine complex solution at various potentials (0.6 to 1.5 V vs. Ag/AgCl). Nickel hydroxide thin film (F0.7) obtained at relatively lower anodic potential (0.7 V) showed enhanced electrochromism between colorless and dark brown in a sodium borate buffer solution at pH 12; the absorption spectrum in the colored (oxidized) state was broadened in the visible and near-infrared region compared with the nickel hydroxide films prepared at the higher anodic potential (1.1 V). characterization of the films revealed that crystal structure of F0.7 is assigned to [alpha]-Ni(OH)[sub 2], and that its electrochromism is based on the reversible oxidation to hexagonal [gamma][sub 2]-2NiO[sub 2] [center dot] NiOOH structure. Composite nickel hydroxide film, i.e., by the electrolytic deposition at 1.1 V followed by that at 0.7 V, showed electrochromic property similar to F0.7 and its durability in repeated redox cycles were much improved in comparison with that of F0.7. Electrochromic properties in switching performance of this composite nickel hydroxide film were investigated.

Chigane, Masaya; Ishikawa, Masami (Osaka Municipal Technical Research Inst. (Japan). Dept. of Inorganic Chemistry)

1994-12-01T23:59:59.000Z

306

Buried anode lithium thin film battery and process for forming the same  

DOE Patents [OSTI]

A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

Lee, Se-Hee; Tracy, C. Edwin; Liu, Ping

2004-10-19T23:59:59.000Z

307

Thin Film Packaging Solutions for High Efficiency OLED Lighting Products  

SciTech Connect (OSTI)

The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology was characterized as having less than 10% change in transmission during the 15,000 hour test period; (3) demonstrated thin film encapsulation of a phosphorescent OLED device with 1,500 hours of lifetime at 60 C and 80% RH; (4) demonstrated that a thin film laminate encapsulation, in addition to the direct thin film deposition process, of a polymer OLED device was another feasible packaging strategy for OLED lighting. The thin film laminate strategy was developed to mitigate defects, demonstrate roll-to-roll process capability for high volume throughput (reduce costs) and to support a potential commercial pathway that is less dependent upon integrated manufacturing since the laminate could be sold as a rolled good; (5) demonstrated that low cost 'blue' glass substrates could be coated with a siloxane barrier layer for planarization and ion-protection and used in the fabrication of a polymer OLED lighting device. This study further demonstrated that the substrate cost has potential for huge cost reductions from the white borosilicate glass substrate currently used by the OLED lighting industry; (6) delivered four-square feet of white phosphorescent OLED technology, including novel high efficiency devices with 82 CRI, greater than 50 lm/W efficiency, and more than 1,000 hours lifetime in a product concept model shelf; (7) presented and or published more than twenty internal studies (for private use), three external presentations (OLED workshop-for public use), and five technology-related external presentations (industry conferences-for public use); and (8) issued five patent applications, which are in various maturity stages at time of publication. Delivery of thin film encapsulated white phosphorescent OLED lighting technology remains a challenging technical achievement, and it seems that commercial availability of thin, bright, white OLED light that meets market requirements will continue to require research and development effort. However, there will be glass encapsulated white OLED lighting products commercialized in niche markets during the 2008 calendar year. This commercializ

None

2008-06-30T23:59:59.000Z

308

Uncooled thin film pyroelectric IR detector with aerogel thermal isolation  

SciTech Connect (OSTI)

Uncooled pyroelectric IR imaging systems, such as night vision goggles, offer important strategic advantages in battlefield scenarios and reconnaissance surveys. Until now, the current technology for fabricating these devices has been limited by low throughput and high cost which ultimately limit the availability of these sensor devices. We have developed and fabricated an alternative design for pyroelectric IR imaging sensors that utilizes a multilayered thin film deposition scheme to create a monolithic thin film imaging element on an active silicon substrate for the first time. This approach combines a thin film pyroelectric imaging element with a thermally insulating SiO{sub 2} aerogel thin film to produce a new type of uncooled IR sensor that offers significantly higher thermal, spatial, and temporal resolutions at a substantially lower cost per unit. This report describes the deposition, characterization and optimization of the aerogel thermal isolation layer and an appropriate pyroelectric imaging element. It also describes the overall integration of these components along with the appropriate planarization, etch stop, adhesion, electrode, and blacking agent thin film layers into a monolithic structure. 19 refs., 8 figs., 6 tabs.

Ruffner, J.A.; Clem, P.G.; Tuttle, B.A. [and others

1998-01-01T23:59:59.000Z

309

Physical properties of erbium implanted tungsten oxide films deposited by reactive dual magnetron sputtering  

E-Print Network [OSTI]

of erbium implanted tungsten oxide films deposited byDual magnetron sputtering; tungsten oxide films; Er ionoptical waveguides [3,5]. Tungsten oxide (WO 3 ) thin films

Mohamed, Sodky H.; Anders, Andre

2006-01-01T23:59:59.000Z

310

Properties of zirconia thin films deposited by laser ablation  

SciTech Connect (OSTI)

Zirconia thin films have been deposited by laser ablation of a ceramic ZrO{sub 2} target in vacuum or in oxygen background at 0.01 mbar. The laser beam generated by an ArF laser (?=193 nm, ?=40 Hz) has been focalized on the target through a spherical lens at an incident angle of 45°. The laser fluence has been established to a value from 2.0 to 3.4 Jcm{sup ?2}. A silicon (100) substrate has been placed parallel to the target, at a distance of 4 cm, and subsequently has been heated to temperatures ranging between 300 °C and 600 °C. Thin films morphology has been characterized by atomic force microscopy and secondary ion mass spectrometry. Biocompatibility of these thin films has been assessed by studying the cell attachment of L929 mouse fibroblasts.

Cancea, V. N. [Department of Physics, University of Craiova, Craiova 200585 (Romania); Filipescu, M.; Colceag, D.; Dinescu, M. [Department of Lasers, National Institute for Laser, Plasma and Radiation Physics, Magurele 077125 (Romania); Mustaciosu, C. [Horia Hulubei National Institute of Physics and Nuclear Engineering, Magurele, Bucharest (Romania)

2013-11-13T23:59:59.000Z

311

Polycrystalline thin-film solar cells and modules  

SciTech Connect (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

312

Polycrystalline thin-film solar cells and modules  

SciTech Connect (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

313

Shape variation of micelles in polymer thin films  

SciTech Connect (OSTI)

The equilibrium properties of block copolymer micelles confined in polymer thin films are investigated using self-consistent field theory. The theory is based on a model system consisting of AB diblock copolymers and A homopolymers. Two different methods, based on the radius of gyration tensor and the spherical harmonics expansion, are used to characterize the micellar shape. The results reveal that the morphology of micelles in thin films depends on the thickness of the thin films and the selectivity of the confining surfaces. For spherical (cylindrical) micelles, the spherical (cylindrical) symmetry is broken by the presence of the one-dimensional confinement, whereas the top-down symmetry is broken by the selectivity of the confining surfaces. Morphological transitions from spherical or cylindrical micelles to cylinders or lamella are predicted when the film thickness approaches the micellar size.

Zhou, Jiajia, E-mail: zhou@uni-mainz.de; Shi, An-Chang, E-mail: shi@mcmaste.ca [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)] [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)

2014-01-14T23:59:59.000Z

314

Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications  

SciTech Connect (OSTI)

Graphical abstract: The degradation tendency extracted by CP technique was almost the same in both the bulk-type and TFT-type cells. - Highlights: • D{sub it} is directly investigated from bulk-type and TFT-type CTF memory. • Charge pumping technique was employed to analyze the D{sub it} information. • To apply the CP technique to monitor the reliability of the 3D NAND flash. - Abstract: The energy distribution and density of interface traps (D{sub it}) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 10{sup 12} cm{sup ?2} eV{sup ?1} to 3.66 × 10{sup 13} cm{sup ?2} eV{sup ?1} due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for D{sub it} of the TFT-type cells was similar to those of bulk-type cells.

An, Ho-Myoung; Kim, Hee-Dong; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

2013-12-15T23:59:59.000Z

315

Surface plasmon coupled emission studies on engineered thin film hybrids of nano ??Al{sub 2}O{sub 3} on silver  

SciTech Connect (OSTI)

We report the first time engineering and fabrication of a novel thin film hybrid of nano ?-alumina doped in a polyvinyl alcohol (PVA) matrix along with rhodamine b (Rh.B) on a silver thin film. Silver films of 50 nm thickness on glass slides were fabricated by thermal evaporation. Nano ?-alumina was synthesized through the combustion route and characterized by XRD. The ?-alumina was dispersed in the PVA-Rh.B matrix by tip sonication. The resultant solution was spin coated on the Ag thin film at 3000 rpm to generate an overcoat of ?30 nm. We have designed and constructed an opto-mechanical setup for performing the SPCE studies. Excitation with a 532 nm continuous laser, led to the coupling of the energy of Rh.B emission to the surface plasmon modes of silver. The emission @ 580 nm was recorded using an Ocean Optics(copyright, serif) fiber optic spectrometer. Calculation of the ratio of signal intensity between the directional SPCE and isotropic fluorescence gives us the factor of signal enhancements which SPCE offers. We report an '8 fold' signal enhancement attributed to SPCE arising from the metal oxide doped thin film hybrid. We observed only a '5 fold' signal enhancement in the case of a thin film hybrid without ?-alumina. The emission was also 92% P-polarized which is in coherence with the theory of SPCE. The greater degree of signal enhancement observed in the ?-alumina doped thin film substrate can be attributed to the surface roughness which alumina offers to silver, which along with the porous nature of alumina enables a greater degree of adsorption of Rh.B which results in a higher emission intensity. Computational modeling was also performed, based on surface plasmon resonance (SPR) calculations to provide theoretical background to observed experimental data. The ?-alumina thin film hybrid can be extended as an economical sensing platform towards the high sensitive detection of analytes.

Mulpur, Pradyumna; Chunduri, Avinash; Rattan, Tanu Mimani; Kamisetti, Venkataramaniah [Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthi Nilayam, Andhra Pradesh, India 515134 (India); Lingam, Kiran; Rao, Apparao M. [Department of Physics and Astronomy, 202C Kinard Laboratory, Clemson University, Clemson, SC 29634 (United States)

2014-01-28T23:59:59.000Z

316

Method of improving field emission characteristics of diamond thin films  

DOE Patents [OSTI]

A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

Krauss, Alan R. (Naperville, IL); Gruen, Dieter M. (Downer Grove, IL)

1999-01-01T23:59:59.000Z

317

Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell  

E-Print Network [OSTI]

We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

Li, Tong; Jiang, Chun

2010-01-01T23:59:59.000Z

318

Method of improving field emission characteristics of diamond thin films  

DOE Patents [OSTI]

A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.

Krauss, A.R.; Gruen, D.M.

1999-05-11T23:59:59.000Z

319

A comparison of thick film and thin film traffic stripes  

E-Print Network [OSTI]

Striys. . . Pigmented Bitusmn Stripes . Asphalt %uilt-Upa Striye vith Pigmented Portland Cement Mortar Cover Course 38 . ~ 41 Thin Film Stripes Used for Comparison Results of Comparing Thick Film Stripes and Thin Film Paint Stripes . ~ ~ ~ ~ ~ 43... was aspbaltio oonorets. The pavement in Test Areas 2y 3p and 4 vas portland cesmnh ooncrete, Two test areas (3 and 4) vere located in such manner as to provide uninterrupted flow of traffic over tbs entire length of the test area. The other two test areas (1...

Keese, Charles J

1952-01-01T23:59:59.000Z

320

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents [OSTI]

A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

1998-02-03T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents [OSTI]

A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

Mitlitsky, Fred (Livermore, CA); Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Colella, Nicholas J. (Livermore, CA)

1998-02-03T23:59:59.000Z

322

Study of Martensitic Phase transformation in a NiTiCu Thin Film...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Phase transformation in a NiTiCu Thin Film Shape Memory Alloy Using Photoelectron Emission Microscopy. Study of Martensitic Phase transformation in a NiTiCu Thin Film Shape...

323

Tax Credits Give Thin-Film Solar a Big Boost | Department of...  

Broader source: Energy.gov (indexed) [DOE]

Thin-Film Solar a Big Boost October 18, 2010 - 2:00pm Addthis MiaSol will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery...

324

The development of a thin-film rollforming process for pharmaceutical continuous manufacturing  

E-Print Network [OSTI]

In this thesis, a continuous rollforming process for the folding of thin-films was proposed and studied as a key step in the continuous manufacturing of pharmaceutical tablets. HPMC and PEG based polymeric thin-films were ...

Slaughter, Ryan (Ryan R.)

2013-01-01T23:59:59.000Z

325

PID Failure of c-Si and Thin-Film Modules and Possible Correlation...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents...

326

Epoxy/Single Walled Carbon Nanotube Nanocomposite Thin Films for Composites Reinforcement  

E-Print Network [OSTI]

This work is mainly focused upon the preparation, processing and evaluation of mechanical and material properties of epoxy/single walled carbon nanotube (SWCNT) nanocomposite thin films. B-staged epoxy/SWCNT nanocomposite thin films at 50% of cure...

Warren, Graham

2010-07-14T23:59:59.000Z

327

Characterization of LiNi?.?Mn?.?O? Thin Film Cathode Prepared by Pulsed Laser Deposition  

E-Print Network [OSTI]

LiNi?.?Mn?.?O? thin films have been grown by pulsed laser deposition (PLD) on stainless steel (SS) substrates. The crystallinity and structure of thin films were investigated by X-ray diffraction (XRD). Microstructure and ...

Xia, Hui

328

High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing  

E-Print Network [OSTI]

One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

329

Adsorption of iso-/n-butane on an Anatase Thin Film: A Molecular...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

iso-n-butane on an Anatase Thin Film: A Molecular Beam Scattering and TDS Study. Adsorption of iso-n-butane on an Anatase Thin Film: A Molecular Beam Scattering and TDS Study....

330

Influence of samaria doping on the resistance of ceria thin films...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

doping on the resistance of ceria thin films and its implications to the planar oxygen sensing devices. Influence of samaria doping on the resistance of ceria thin films and...

331

Generation of low work function, stable compound thin films by laser ablation  

DOE Patents [OSTI]

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

2001-01-01T23:59:59.000Z

332

Carrier Dynamics in a-Fe2O3 (0001) Thin Films and Single Crystals...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Carrier Dynamics in a-Fe2O3 (0001) Thin Films and Single Crystals Probed by Femtosecond Transient Absorption and Reflectivity. Carrier Dynamics in a-Fe2O3 (0001) Thin Films and...

333

Two-color Laser Desorption of Nanostructured MgO Thin Films....  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Two-color Laser Desorption of Nanostructured MgO Thin Films. Two-color Laser Desorption of Nanostructured MgO Thin Films. Abstract: Neutral magnesium atom emission from...

334

Initiated chemical vapor deposition of polymeric thin films : mechanism and applications  

E-Print Network [OSTI]

Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness ...

Chan, Kelvin, Ph. D. Massachusetts Institute of Technology

2005-01-01T23:59:59.000Z

335

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

SciTech Connect (OSTI)

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

336

The origin of white luminescence from silicon oxycarbide thin films  

SciTech Connect (OSTI)

Silicon oxycarbide (SiC{sub x}O{sub y}) is a promising material for achieving strong room-temperature white luminescence. The present work investigated the mechanisms for light emission in the visible/ultraviolet range (1.5–4.0?eV) from chemical vapor deposited amorphous SiC{sub x}O{sub y} thin films, using a combination of optical characterizations and electron paramagnetic resonance (EPR) measurements. Photoluminescence (PL) and EPR studies of samples, with and without post-deposition passivation in an oxygen and forming gas (H{sub 2} 5 at.?% and N{sub 2} 95 at.?%) ambient, ruled out typical structural defects in oxides, e.g., Si-related neutral oxygen vacancies or non-bridging oxygen hole centers, as the dominant mechanism for white luminescence from SiC{sub x}O{sub y}. The observed intense white luminescence (red, green, and blue emission) is believed to arise from the generation of photo-carriers by optical absorption through C-Si-O related electronic transitions, and the recombination of such carriers between bands and/or at band tail states. This assertion is based on the realization that the PL intensity dramatically increased at an excitation energy coinciding with the E{sub 04} band gaps of the material, as well as by the observed correlation between the Si-O-C bond density and the PL intensity. An additional mechanism for the existence of a blue component of the white emission is also discussed.

Nikas, V.; Gallis, S., E-mail: sgalis@us.ibm.com; Huang, M.; Kaloyeros, A. E. [College of Nanoscale Sciences and Engineering, State University of New York, Albany, New York 12203 (United States); Nguyen, A. P. D.; Stesmans, A.; Afanas'ev, V. V. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium)

2014-02-10T23:59:59.000Z

337

INTERFACE SCIENCE 12, 259266, 2004 c 2004 Kluwer Academic Publishers. Manufactured in The Netherlands.  

E-Print Network [OSTI]

in The Netherlands. Analysis of Bulk and Interface Phenomena in CdTe/CdS Thin-Film Solar Cells M. TERHEGGEN, H

Romeo, Alessandro

338

Enhanced quantum efficiency of amorphous silicon thin film solar cells with the inclusion of a rear-reflector thin film  

SciTech Connect (OSTI)

We investigated the growth mechanism of amorphous silicon thin films by implementing hot-wire chemical vapor deposition and fabricated thin film solar cell devices. The fabricated cells showed efficiencies of 7.5 and 8.6% for the samples without and with the rear-reflector decomposed by sputtering, respectively. The rear-reflector enhances the quantum efficiency in the infrared spectral region from 550 to 750?nm. The more stable quantum efficiency of the sample with the inclusion of a rear-reflector than the sample without the rear-reflector due to the bias effect is related to the enhancement of the short circuit current.

Park, Seungil [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Yong Ji, Hyung; Jun Kim, Myeong; Hyeon Peck, Jong [Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Kim, Keunjoo, E-mail: kimk@chonbuk.ac.kr [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2014-02-17T23:59:59.000Z

339

Barium ferrite thin film media with perpendicular c-axis orientation and small grain size  

E-Print Network [OSTI]

Barium ferrite thin film media with perpendicular c-axis orientation and small grain size Zailong, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 Barium ferrite thin films with perpendicular c conditions. The c-axis orientation of barium ferrite thin films is most sensitive to the oxygen partial

Laughlin, David E.

340

An integrated thin-film thermo-optic waveguide beam deflector Suning Tang,a)  

E-Print Network [OSTI]

An integrated thin-film thermo-optic waveguide beam deflector Suning Tang,a) Bulang Li, and Xinghua for publication 16 February 2000 We have demonstrated the operation of a thin-film thermo-optical beam deflector in a three-layer optical planar waveguide. The fabricated waveguide beam deflector consists of a thin-film Si

Chen, Ray

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b  

E-Print Network [OSTI]

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b , Ounsi of an absorbing planar photonic crystal within a thin film photovoltaic cell. The devices are based on a stack with large areas. Keywords: Photonic crystal, Photovoltaic solar cell, Thin film solar cell, Hydrogenated

Paris-Sud XI, Université de

342

Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova*  

E-Print Network [OSTI]

1 Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova* , I be minimized throughout the fabrication process. Amorphous silicon thin-film transistors and solar cells, thin-film transistor, solar cell, flexible electronics Phone: (609) 258-4626, Fax: (609) 258-3585, E

343

Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells  

E-Print Network [OSTI]

Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells D.L. Pulfrey*, J. Dell): pulfrey@ece.ubc.ca ABSTRACT Cadmium telluride thin-film solar cells are now commercially available be attainable. 1. INTRODUCTION Thin film solar cells based on polycrystalline CdTe have been investigated

Pulfrey, David L.

344

LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle  

E-Print Network [OSTI]

LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle Physics response map, was developed and used to map defects in thin-film solar cells [4]. Improvements to the two) measurements are providing a direct link between the spatial non-uniformities inherent in thin-film

Sites, James R.

345

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

Sites, James R.

346

Plasmonic enhancement of thin-film solar cells using gold-black C.J. Fredricksena  

E-Print Network [OSTI]

Plasmonic enhancement of thin-film solar cells using gold-black coatings C.J. Fredricksena , D. R thin-film amorphous-silicon solar cells enhance the short-circuit current by 20% over a broad spectrum and locally enhance the field strength. Keywords: plasmonics, thin-film, solar cell, metallic nanoparticles

Peale, Robert E.

347

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell  

E-Print Network [OSTI]

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic­4]. In this context, a basic idea is to periodically texture the metallic back reflector of a thin-film solar cell

348

DETERMINING OPTICAL CONSTANTS OF URANIUM NITRIDE THIN FILMS IN THE EXTREME  

E-Print Network [OSTI]

DETERMINING OPTICAL CONSTANTS OF URANIUM NITRIDE THIN FILMS IN THE EXTREME ULTRAVIOLET (1.6-35 NM deposition and characterization of reactively-sputtered uranium nitride thin films. I also report optical.1 Application 1 1.2 Optical Constants 2 1.3 Project Focus 7 2 Uranium Nitride Thin Films 8 2.1 Sputtering 8 2

Hart, Gus

349

Josephson junction in a thin film V. G. Kogan, V. V. Dobrovitski, and J. R. Clem  

E-Print Network [OSTI]

Josephson junction in a thin film V. G. Kogan, V. V. Dobrovitski, and J. R. Clem Ames Laboratory The phase difference (y) for a vortex at a line Josephson junction in a thin film attenuates at large was normal to the film faces unlike traditional thin-film large- area Josephson junctions in which

Mints, Roman G.

350

Metal-black scattering centers to enhance light harvesting by thin-film solar cells  

E-Print Network [OSTI]

Metal-black scattering centers to enhance light harvesting by thin-film solar cells Deep Panjwania as scattering centers to increase the effective optical thickness of thin-film solar cells. The particular type. Gold-black was deposited on commercial thin-film solar cells using a thermal evaporator in nitrogen

Peale, Robert E.

351

Microwave plasma assisted supersonic gas jet deposition of thin film materials  

DOE Patents [OSTI]

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

Schmitt, III, Jerome J. (New Haven, CT); Halpern, Bret L. (Bethany, CT)

1993-01-01T23:59:59.000Z

352

Low-Cost, Fiber-Optic Hydrogen Gas Detector Using Guided-Wave, Surface-Plasmon Resonance in Chemochromic Thin Films  

SciTech Connect (OSTI)

Low-cost, hydrogen-gas-leak detectors are needed for many hydrogen applications, such as hydrogen-fueled vehicles where several detectors may be required in different locations on each vehicle. A fiber-optic leak detector could be inherently safer than conventional detectors, because it would remove all detector electronics from the vicinity of potential leaks. It would also provide freedom from electromagnetic interference, a serious problem in fuel-cell-powered electric vehicles. This paper describes the design of a fiber-optic, surface-plasmon-resonance hydrogen detector, and efforts to make it more sensitive, selective, and durable. Chemochromic materials, such as tungsten oxide and certain Lanthanide hydrides, can reversibly react with hydrogen in air while exhibiting significant changes in their optical properties. Thin films of these materials applied to a sensor at the end of an optical fiber have been used to detect low concentrations of hydrogen gas in air. The coatings include a thin silver layer in which the surface plasmon is generated, a thin film of the chemochromic material, and a catalytic layer of palladium that facilitates the reaction with hydrogen. The film thickness is chosen to produce a guided-surface plasmon wave along the interface between the silver and the chemochromic material. A dichroic beam-splitter separates the reflected spectrum into a portion near the resonance and a portion away from the resonance, and directs these two portions to two separate photodiodes. The electronic ratio of these two signals cancels most of the fiber transmission noise and provides a stable hydrogen signal.

Benson, D. K.; Tracy, C. E.; Lee, S-H. (National Renewable Energy Laboratory); Hishmeh, G. A.; Haberman, D. P. (DCH Technologies, Valencia, CA); Ciszek, P. A. (Evergreen Solar, Waltham, MA)

1998-10-20T23:59:59.000Z

353

Integrated thin film batteries on silicon  

E-Print Network [OSTI]

Monolithic integration has been implemented successfully in complementary metal oxide semiconductor (CMOS) technology and led to improved device performance, increased reliability, and overall cost reduction. The next ...

Ariel, Nava

2005-01-01T23:59:59.000Z

354

Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices  

SciTech Connect (OSTI)

SiOnyx has developed an enhanced thin film silicon photovoltaic device with improved efficiency. Thin film silicon solar cells suffer from low material absorption characteristics resulting in poor cell efficiencies. SiOnyx’s approach leverages Black Silicon, an advanced material fabricated using ultrafast lasers. The laser treated films show dramatic enhancement in optical absorption with measured values in excess of 90% in the visible spectrum and well over 50% in the near infrared spectrum. Thin film Black Silicon solar cells demonstrate 25% higher current generation with almost no impact on open circuit voltage as compared with representative control samples. The initial prototypes demonstrated an improvement of nearly 2 percentage points in the suns Voc efficiency measurement. In addition we validated the capability to scale this processing technology to the throughputs (< 5 min/m2) required for volume production using state of the art commercially available high power industrial lasers. With these results we clearly demonstrate feasibility for the enhancement of thin film solar cells with this laser processing technique.

Martin U. Pralle; James E. Carey

2010-07-31T23:59:59.000Z

355

Stress and Moisture Effects on Thin Film Buckling Delamination  

E-Print Network [OSTI]

­2 GPa compres- sive residual stresses were sputter deposited on top of thin (below 100 nm) copper superlayer with com- pressive residual stress was sputter deposited on top of the films in order to help Mechanics 2006 Abstract Deposition processes control the properties of thin films; they can also introduce

Volinsky, Alex A.

356

Thin film cracking and ratcheting caused by temperature cycling  

E-Print Network [OSTI]

Thin film cracking and ratcheting caused by temperature cycling M. Huang and Z. Suo Mechanical caused by ratcheting in an adjacent ductile layer. For example, on a silicon die directly attached corners. Aided by cycling temperature, the shear stresses cause ratcheting in the aluminum pads

Suo, Zhigang

357

Perovskite phase thin films and method of making  

DOE Patents [OSTI]

The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

Boyle, Timothy J. (Albuquerque, NM); Rodriguez, Mark A. (Albuquerque, NM)

2000-01-01T23:59:59.000Z

358

Quasi-Reversible Oxygen Exchange of Amorphous IGZO Thin Films  

E-Print Network [OSTI]

MRSEC Quasi-Reversible Oxygen Exchange of Amorphous IGZO Thin Films NSF Grant # 1121262 A. U. Adler of varying oxygen partial pressure. Oxygen exchange was confirmed by 18O tracer diffusion (time of carrier content vs. pO2) analysis should be applicable for studying the underlying carrier generation

Shahriar, Selim

359

Critical fields in ferromagnetic thin films: Identification of four regimes  

E-Print Network [OSTI]

Critical fields in ferromagnetic thin films: Identification of four regimes Rub´en Cantero­film elements is a paradigm for a multi­scale pattern­forming system. On one hand, there is a material length functional ceases to be positive definite. The degenerate subspace consists of the "unstable modes

Otto, Felix

360

Method of preparing thin film polymeric gel electrolytes  

DOE Patents [OSTI]

Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

Derzon, Dora K. (Albuquerque, NM); Arnold, Jr., Charles (Albuquerque, NM)

1997-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Method of preparing thin film polymeric gel electrolytes  

DOE Patents [OSTI]

Novel hybrid thin film electrolyte is described, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1}cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

Derzon, D.K.; Arnold, C. Jr.

1997-11-25T23:59:59.000Z

362

Method for double-sided processing of thin film transistors  

DOE Patents [OSTI]

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Yuan, Hao-Chih (Madison, WI); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI); Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI)

2008-04-08T23:59:59.000Z

363

Front and backside processed thin film electronic devices  

DOE Patents [OSTI]

This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI); Yuan, Hao-Chih (Lakewood, CO); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI)

2012-01-03T23:59:59.000Z

364

Front and backside processed thin film electronic devices  

DOE Patents [OSTI]

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Yuan, Hao-Chih (Madison, WI); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI); Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI)

2010-10-12T23:59:59.000Z

365

Chemical analysis of thin films at Sandia National Laboratories  

SciTech Connect (OSTI)

The characterization of thin films produced by chemical and physical vapor deposition requires special analytical techniques. When the average compositions of the films are required, dissolution of the thin films and measurement of the concentrations of the solubilized species is the appropriate analytical approach. In this report techniques for the wet chemical analysis of thin films of Si:Al, P/sub 2/O/sub 5/:SiO/sub 2/, B/sub 2/O/sub 3/:SiO/sub 2/, TiB/sub x/ and TaB/sub x/ are described. The analyses are complicated by the small total quantities of these analytes present in the films, the refractory characters of these analytes, and the possibility of interferences from the substrates on which the films are deposited. Etching conditions are described which dissolve the thin films without introducing interferences from the substrates. A chemical amplification technique and inductively coupled plasma atomic emission spectrometry are shown to provide the sensitivity required to measure the small total quantities (micrograms to milligrams) of analytes present. Also the chemical analysis data has been used to calibrate normal infrared absorption spectroscopy to give fast estimates of the phosphorus and/or boron dopant levels in thin SiO/sub 2/ films.

Tallant, D.R.; Taylor, E.L.

1980-05-01T23:59:59.000Z

366

Micromachined thin-film gas flow sensor for microchemical reactors  

E-Print Network [OSTI]

Micromachined thin-film gas flow sensor for microchemical reactors W C Shin and R S Besser New applications not practical before such as highly compact, non-invasive pressure sensors, accelerometers and gas power consumption, fast response, and low-cost batch production [1-4]. Spurred by the development

Besser, Ronald S.

367

Thin Films and the Systems-Driven Approach  

SciTech Connect (OSTI)

A systems-driven approach is used to discern tradeoffs between cost and efficiency improvements for various thin-film module technologies and designs. Prospects for reduced system cost via such strategies are enhanced as balance-of-systems costs decline, and some strategies are identified for greater research focus.

Zweibel, K.

2005-01-01T23:59:59.000Z

368

Long-wave models of thin film fluid dynamics  

E-Print Network [OSTI]

Centre manifold techniques are used to derive rationally a description of the dynamics of thin films of fluid. The derived model is based on the free-surface $\\eta(x,t)$ and the vertically averaged horizontal velocity $\\avu(x,t)$. The approach appears to converge well and has significant differences from conventional depth-averaged models.

A. J. Roberts

1994-11-04T23:59:59.000Z

369

Atomic and Electronic Structure of Polar Oxide Interfaces  

SciTech Connect (OSTI)

In this project we developed fundamental understanding of atomic and electronic mechanisms for stabilization of polar oxide interfaces. An integrated experimental and theoretical methodology was used to develop knowledge on this important new class of ionic materials with limited dimensionality, with implications for multiple branches of the basic and applied energy sciences.

Gajdardziska-Josifovska, Marija [University of Wisconsin Milwaukee] [University of Wisconsin Milwaukee

2014-01-17T23:59:59.000Z

370

Polycrystalline thin-film technology: Recent progress in photovoltaics  

SciTech Connect (OSTI)

Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe{sub 2}), cadmium telluride (CdTe), and thin-film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin-film CuInSe{sub 2}, has made some rapid advances in terms of high efficiency and long-term reliability. For CuInSe{sub 2} power modules, a world record has been reported on a 0.4-m{sup 2} module with an aperture-area efficiency of 10.4% and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe{sub 2} modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 cm{sup 2}. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10%; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

1991-12-01T23:59:59.000Z

371

Enhancement in figure-of-merit with superlattices structures for thin-film thermoelectric devices  

SciTech Connect (OSTI)

Thin-film superlattice (SL) structures in thermoelectric materials are shown to be a promising approach to obtaining an enhanced figure-of-merit, ZT, compared to conventional, state-of-the-art bulk alloyed materials. In this paper the authors describe experimental results on Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures, relevant to thermoelectric cooling and power conversion, respectively. The short-period Bi{sub 2}Te{sub 3} and Si/Ge SL structures appear to indicate reduced thermal conductivities compared to alloys of these materials. From the observed behavior of thermal conductivity values in the Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} SL structures, a distinction is made where certain types of periodic structures may correspond to an ordered alloy rather than an SL, and therefore, do not offer a significant reduction in thermal conductivity values. The study also indicates that SL structures, with little or weak quantum-confinement, also offer an improvement in thermoelectric power factor over conventional alloys. They present power factor and electrical transport data in the plane of the SL interfaces to provide preliminary support for the arguments on reduced alloy scattering and impurity scattering in Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures. These results, though tentative due to the possible role of the substrate and the developmental nature of the 3-{omega} method used to determine thermal conductivity values, suggest that the short-period SL structures potentially offer factorial improvements in the three-dimensional figure-of-merit (ZT3D) compared to current state-of-the-art bulk alloys. An approach to a thin-film thermoelectric device called a Bipolarity-Assembled, Series-Inter-Connected Thin-Film Thermoelectric Device (BASIC-TFTD) is introduced to take advantage of these thin-film SL structures.

Venkatasubramanian, R.; Colpitts, T.

1997-07-01T23:59:59.000Z

372

Electrically Modulated Thin Film Dynamics Controlling Bubble Manipulation in Microfluidic Confinement  

E-Print Network [OSTI]

Thin film dynamics and associated instability mechanisms have triggered a wide range of scientific innovations, as attributed to their abilities of creating fascinating patterns over small scales. Here, we demonstrate a new thin film instability phenomenon governed by electro-mechanics and hydrodynamics over interfacial scales in a narrow fluidic confinement. We first bring out the essential physics of this instability mechanism, in consideration with the fact that under the action of axial electrical field in a confined microfluidic environment, perturbations may be induced on the interfaces of thin corner films formed adjacent to the walls of a microchannel, leading to the inception of ordered lateral structures. A critical electric field exists beyond which these structures from the walls of the confinement intermingle to evolve into localized gas pockets in the form of bubbles. These bubbles do not remain static with further changes in electric field, but undergo a sequence of elongation-deformation-breakup episode in a dynamically evolving manner. By elucidating the complex interplay of electro-hydrodynmic forces and surface tension, we offer further insights into a new paradigm of interfacial instability mediated controlled microbubble manipulation for on-chip applications, bearing far-ranging scientific and technological consequences in executing designed fluidic operations in confined miniaturized environment.

Debapriya Chakraborty; Suman Chakraborty

2014-12-03T23:59:59.000Z

373

Tailoring the coercivity in ferromagnetic ZnO thin films by 3d and 4f elements codoping  

SciTech Connect (OSTI)

Cluster free, Co (3d) and Eu (4f) doped ZnO thin films were prepared using ion implantation technique accompanied by post annealing treatments. Compared with the mono-doped ZnO thin films, the samples codoped with Co and Eu exhibit a stronger magnetization with a giant coercivity of 1200?Oe at ambient temperature. This was further verified through x-ray magnetic circular dichroism analysis, revealing the exchange interaction between the Co 3d electrons and the localized carriers induced by Eu{sup 3+} ions codoping. The insight gained with modulating coercivity in magnetic oxides opens up an avenue for applications requiring non-volatility in spintronic devices.

Lee, J. J.; Xing, G. Z., E-mail: guozhong.xing@unsw.edu.au; Yi, J. B.; Li, S. [School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052 (Australia)] [School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052 (Australia); Chen, T. [Department of Physics, The Chinese University of Hong Kong, Shatin (Hong Kong)] [Department of Physics, The Chinese University of Hong Kong, Shatin (Hong Kong); Ionescu, M. [Australian Nuclear Science and Technology Organization, Sydney, New South Wales 2234 (Australia)] [Australian Nuclear Science and Technology Organization, Sydney, New South Wales 2234 (Australia)

2014-01-06T23:59:59.000Z

374

nomalous Interface and Surface Strontium Segregation in (La1-ySry)2CoO4 /La1-xSrxCoO3- Heterostructured Thin Films  

SciTech Connect (OSTI)

Heterostructured materials have shown unusual physiochemical properties at the interfaces such as two dimensional electron gas systems, high-temperature superconductivity, and enhanced catalysis. Here we report the first atomic-scale evidence of the microscopic structure of a perovskite/Ruddlesden-Popper heterostructure (having La1-xSrxCoO3- /(La1-ySry)2CoO4 ), and anomalous strontium segregation at the interface and in the Ruddlesden-Popper structure using direct X-ray methods combined with ab initio calculations. The remarkably enhanced activity of such heterostructured surfaces relative to bulk perovskite and Ruddlesden-Popper oxides previously shown for oxygen electrocatalysis at elevated temperatures can be attributed to reduced thermodynamic penalty of oxygen vacancies in the oxide structure associated with Sr segregation observed in the heterostructure. Our findings provide insights for the design of highly active catalysts for energy conversion and storage applications.

Feng, Zhenxing [Massachusetts Institute of Technology (MIT)] [Massachusetts Institute of Technology (MIT); Yacoby, Yuzhak [Massachusetts Institute of Technology (MIT)] [Massachusetts Institute of Technology (MIT); Gadre, Milind [Massachusetts Institute of Technology (MIT)] [Massachusetts Institute of Technology (MIT); Lee, Yueh-Lin [Massachusetts Institute of Technology (MIT)] [Massachusetts Institute of Technology (MIT); Hong, W. [Harvard University] [Harvard University; Zhou, Hua [Argonne National Laboratory (ANL)] [Argonne National Laboratory (ANL); Biegalski, Michael D [ORNL] [ORNL; Christen, Hans M [ORNL] [ORNL; Adler, Stuart [University of Washington] [University of Washington; Morgan, Dane [University of Wisconsin, Madison] [University of Wisconsin, Madison; Shao-Horn, Yang [Massachusetts Institute of Technology (MIT)] [Massachusetts Institute of Technology (MIT)

2014-01-01T23:59:59.000Z

375

Metal oxide films on metal  

DOE Patents [OSTI]

A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

Wu, Xin D. (Los Alamos, NM); Tiwari, Prabhat (Los Alamos, NM)

1995-01-01T23:59:59.000Z

376

Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: • The resistive switching characteristics of WN{sub x} thin films. • Excellent CMOS compatibility WN{sub x} films as a resistive switching material. • Resistive switching mechanism revealed trap-controlled space charge limited conduction. • Good endurance and retention properties over 10{sup 5} cycles, and 10{sup 5} s, respectively - Abstract: We report the resistive switching (RS) characteristics of tungsten nitride (WN{sub x}) thin films with excellent complementary metal-oxide-semiconductor (CMOS) compatibility. A Ti/WN{sub x}/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WN{sub x} films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >10{sup 5} cycles and a long retention time of >10{sup 5} s.

Hong, Seok Man; Kim, Hee-Dong; An, Ho-Myoung; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr

2013-12-15T23:59:59.000Z

377

E-Print Network 3.0 - aluminum oxide doping Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Porous Aluminum Oxide Film Formed on an Electrically Insulating... Carolina 29208, USA Thin films of porous anodic aluminum oxide have been prepared on an electrically......

378

Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters?  

SciTech Connect (OSTI)

In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100?°C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford backscattering spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.

Podhorodecki, A., E-mail: artur.p.podhorodecki@pwr.wroc.pl; Golacki, L. W.; Zatryb, G.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Wang, J.; Jadwisienczak, W. [School of EECS, Ohio University, Stocker Center 363, Athens, Ohio 45701 (United States); Fedus, K. [Institute of Physics, Nicholas Copernicus University, Grudziadzka 5/7, 87-100 Torun (Poland); Wojcik, J.; Wilson, P. R. J.; Mascher, P. [Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, 1280 Main St. W, Hamilton, Ontario L8S4L7 (Canada)

2014-04-14T23:59:59.000Z

379

First-principles study of compensation mechanisms in negatively charged LaGaO3/MgAl2O4 interfaces  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

Thin film oxide heterostructures with a bound charge at the interface require electrical compensation, which can involve redistribution of mobile charge carriers. We explore a model LaGaO3(001)//MgAl2O4(001) heterostructure with nominally negatively charged interfaces using first-principles methods and a Poisson-Boltzmann equation. We find that charge compensation by oxygen vacancies with quadratically decaying concentration away from the interface is more favorable than electronic redistribution. These vacancies have a potential to enhance ionic conductivity along the interfaces.

Rébola, Alejandro; Fong, Dillon D.; Eastman, Jeffrey A.; Ö?üt, Serdar; Zapol, Peter

2013-06-01T23:59:59.000Z

380

Buffer layer for thin film structures  

DOE Patents [OSTI]

A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

2010-06-15T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Buffer layer for thin film structures  

DOE Patents [OSTI]

A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

2006-10-31T23:59:59.000Z

382

Superhydrophobic Thin Film Symposium | ornl.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium OxideSuminDeposition of Metal

383

Thin film photovoltaic device and process of manufacture  

DOE Patents [OSTI]

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

1999-02-09T23:59:59.000Z

384

Thin film photovoltaic device and process of manufacture  

DOE Patents [OSTI]

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

1997-10-07T23:59:59.000Z

385

Thin film photovoltaic device and process of manufacture  

DOE Patents [OSTI]

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Albright, S.P.; Chamberlin, R.

1997-10-07T23:59:59.000Z

386

Thin film photovoltaic device and process of manufacture  

DOE Patents [OSTI]

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Albright, S.P.; Chamberlin, R.

1999-02-09T23:59:59.000Z

387

Thin-Film Reliability Trends Toward Improved Stability: Preprint  

SciTech Connect (OSTI)

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (Rd) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2+/-0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-07-01T23:59:59.000Z

388

Method for formation of thin film transistors on plastic substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

1998-10-06T23:59:59.000Z

389

Method for formation of thin film transistors on plastic substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

1998-10-06T23:59:59.000Z

390

Thin-Film Reliability Trends Toward Improved Stability  

SciTech Connect (OSTI)

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (R{sub d}) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2 {+-} 0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-01-01T23:59:59.000Z

391

Strain mapping on gold thin film buckling and siliconblistering  

SciTech Connect (OSTI)

Stress/Strain fields associated with thin film buckling induced by compressive stresses or blistering due to the presence of gas bubbles underneath single crystal surfaces are difficult to measure owing to the microscale dimensions of these structures. In this work, we show that micro Scanning X-ray diffraction is a well suited technique for mapping the strain/stress tensor of these damaged structures.

Goudeau, P.; Tamura, N.; Parry, G.; Colin, J.; Coupeau, C.; Cleymand, F.; Padmore, H.

2005-09-01T23:59:59.000Z

392

Optical sensors and multisensor arrays containing thin film electroluminescent devices  

DOE Patents [OSTI]

Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.

Aylott, Jonathan W. (Ann Arbor, MI); Chen-Esterlit, Zoe (Ann Arbor, MI); Friedl, Jon H. (Ames, IA); Kopelman, Raoul (Ann Arbor, MI); Savvateev, Vadim N. (Ames, IA); Shinar, Joseph (Ames, IA)

2001-12-18T23:59:59.000Z

393

Fabrication and testing of thermoelectric thin film devices  

SciTech Connect (OSTI)

Two thin-film thermoelectric devices are experimentally demonstrated. The relevant thermal loads on the cold junction of these devices are determined. The analytical form of the equation that describes the thermal loading of the device enables one to model the performance based on the independently measured electronic properties of the films forming the devices. This model elucidates which parameters determine device performance, and how they can be used to maximize performance.

Wagner, A.V.; Foreman, R.J.; Summers, L.J.; Barbee, T.W. Jr.; Farmer, J.C. [Lawrence Livermore National Lab., CA (United States). Chemistry and Materials Science Dept.

1996-03-01T23:59:59.000Z

394

Substrates suitable for deposition of superconducting thin films  

DOE Patents [OSTI]

A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

Feenstra, Roeland (Oak Ridge, TN); Boatner, Lynn A. (Oak Ridge, TN)

1993-01-01T23:59:59.000Z

395

Formation of thin-film resistors on silicon substrates  

DOE Patents [OSTI]

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

1988-11-01T23:59:59.000Z

396

Thin film adhesion by nanoindentation-induced superlayers. Final report  

SciTech Connect (OSTI)

This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

Gerberich, William W.; Volinsky, A.A.

2001-06-01T23:59:59.000Z

397

Electrical properties of quench-condensed thin film  

E-Print Network [OSTI]

cryopump is used for high vacuum pumping. Materials to be evaporated (evaporant) are held by evaporation sources, like a crucible, boat or wire coil. Tungsten wire is commonly used as an evaporation source for materials like aluminum, nickel, chromium... films were evaporated at room temperature with NRC 3114 commercial thermal evaporator. We deposited aluminum and nickel thin films in a form of bar with shadow mask. A commercial tungsten basket was used for the evaporation source. The evaporation...

Lee, Kyoungjin

2009-05-15T23:59:59.000Z

398

Impact of environmental conditions on the chemical surface properties of Cu(In,Ga)(S,Se){sub 2} thin-film solar cell absorbers  

SciTech Connect (OSTI)

Environmentally driven aging effects play a crucial role in thin-film solar cells based on Cu(In,Ga)(S,Se){sub 2}, both for long-term stability and short air exposure during production. For a better understanding of such effects, Cu(In,Ga)(S,Se){sub 2} absorber surfaces were investigated by x-ray photoelectron and Auger electron spectroscopy after exposure to different environmental conditions. Identical absorbers were stored in a nitrogen atmosphere, in damp heat, and under ambient conditions for up to 14 days. We find varying degrees of diffusion of sulfur, copper, and sodium towards the surface, with potential impact on the electronic surface structure (band gap) and the properties of the interface to a buffer layer in a solar cell device. Furthermore, we observe an oxidation (in decreasing order) of indium, copper, and selenium (but no oxidation of sulfur). And finally, varying amounts of carbon- and oxygen-containing adsorbates are found. In particular, the findings suggest that, for ambient air exposure, sodium carbonate is formed at the surface.

Hauschild, D., E-mail: dirk.hauschild@physik.uni-wuerzburg.de, E-mail: l.weinhardt@kit.edu; Meyer, F. [Experimental Physics VII, University of Würzburg, Am Hubland, 97074 Würzburg (Germany); Pohlner, S.; Lechner, R.; Dietmüller, R.; Palm, J. [AVANCIS GmbH and Co. KG, Otto-Hahn-Ring 6, 81739 Munich (Germany); Heske, C. [Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), Hermann-v.-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology (KIT), Hermann-v.-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Department of Chemistry, University of Nevada, Las Vegas (UNLV), 4505 Maryland Parkway, Las Vegas, Nevada 89154-4003 (United States); Institute for Chemical Technology and Polymer Chemistry, Karlsruhe Institute of Technology (KIT), Engesserstr. 18/20, 76128 Karlsruhe (Germany); Weinhardt, L., E-mail: dirk.hauschild@physik.uni-wuerzburg.de, E-mail: l.weinhardt@kit.edu [Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), Hermann-v.-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology (KIT), Hermann-v.-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Department of Chemistry, University of Nevada, Las Vegas (UNLV), 4505 Maryland Parkway, Las Vegas, Nevada 89154-4003 (United States); Reinert, F. [Experimental Physics VII, University of Würzburg, Am Hubland, 97074 Würzburg (Germany); Karlsruhe Institute of Technology (KIT), Gemeinschaftslabor für Nanoanalytik, 76021 Karlsruhe (Germany)

2014-05-14T23:59:59.000Z

399

Geometric shape control of thin film ferroelectrics and resulting structures  

DOE Patents [OSTI]

A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

400

Growth and characterization of Pt-protected Gd{sub 5}Si{sub 4} thin films  

SciTech Connect (OSTI)

Successful growth and characterization of thin films of giant magnetocaloric Gd{sub 5}(Si{sub x}Ge{sub 1?x}){sub 4} were reported in the literature with limited success. The inherent difficulty in producing this complex material makes it difficult to characterize all the phases present in the thin films of this material. Therefore, thin film of binary compound of Gd{sub 5}Si{sub 4} was deposited by pulsed laser deposition. It was then covered with platinum on the top of the film to protect against any oxidation when the film was exposed to ambient conditions. The average film thickness was measured to be approximately 350?nm using a scanning electron microscopy, and the composition of the film was analyzed using energy dispersive spectroscopy. X-ray diffraction analysis indicates the presence of Gd{sub 5}Si{sub 4} orthorhombic structure along with Gd{sub 5}Si{sub 3} secondary phase. The transition temperature of the film was determined from magnetic moment vs. temperature measurement. The transition temperature was between 320 and 345?K which is close to the transition temperature of the bulk material. Magnetic moment vs. magnetic field measurement confirmed that the film was ferromagnetic below 342?K.

Hadimani, R. L., E-mail: hadimani@iastate.edu; Jiles, D. C. [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Mudryk, Y.; Prost, T. E. [Materials and Engineering Physics Program, Ames Laboratory, U.S. Department of Energy, Ames, Iowa 50011 (United States); Pecharsky, V. K.; Gschneidner, K. A. [Materials and Engineering Physics Program, Ames Laboratory, U.S. Department of Energy, Ames, Iowa 50011 (United States); Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011 (United States)

2014-05-07T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Superhydrophobic Thin Film Coatings - Energy Innovation Portal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium OxideSuminDeposition of Metal FilmsIndustrialSolar

402

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability  

SciTech Connect (OSTI)

Thin-film transistors (TFTs) with a high stability and a high field-effect mobility have been achieved using W-doped indium oxide semiconductors in a low-temperature process (?150?°C). By incorporating WO{sub 3} into indium oxide, TFTs that were highly stable under a negative bias stress were reproducibly achieved without high-temperature annealing, and the degradation of the field-effect mobility was not pronounced. This may be due to the efficient suppression of the excess oxygen vacancies in the film by the high dissociation energy of the bond between oxygen and W atoms and to the different charge states of W ions.

Kizu, Takio; Aikawa, Shinya; Mitoma, Nobuhiko; Shimizu, Maki; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-04-14T23:59:59.000Z

403

Investigation of the magnetic properties of insulating thin films using the longitudinal spin Seebeck effect  

SciTech Connect (OSTI)

The longitudinal spin Seebeck effect is used as a detector for the magnetic properties and switching characteristics of magnetic thin insulating films. We use a 300 nm and a 20?nm thick Yttrium Iron Garnet (YIG, Y{sub 3}Fe{sub 5}O{sub 12}) film prepared by pulsed laser deposition and afterwards coated by platinum for the detection of the thermally excited magnons by the inverse spin Hall effect. The inverse spin Hall signals reveal a magnetic uniaxial anisotropy along the direction of the platinum stripe in the thicker film. For the thin film we find a more isotropic behavior, which is complementarily observed using the magnetoresistance occurring at the platinum/YIG interface. We explain our results on the basis of x-ray diffraction data, which reveal a miscut of the substrate and film surface and an expansion of the YIG lattice. Both findings favor a growth-induced magnetic anisotropy that we observe.

Kehlberger, A., E-mail: kehlberg@uni-mainz.de; Jakob, G.; Kläui, M. [Institute of Physics, University of Mainz, 55099 Mainz (Germany); Onbasli, M. C.; Kim, D. H.; Ross, C. A. [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2014-05-07T23:59:59.000Z

404

Influence of curvature on the device physics of thin film transistors on flexible substrates  

SciTech Connect (OSTI)

Thin film transistors (TFTs) on elastomers promise flexible electronics with stretching and bending. Recently, there have been several experimental studies reporting the behavior of TFTs under bending and buckling. In the presence of stress, the insulator capacitance is influenced due to two reasons. The first is the variation in insulator thickness depending on the Poisson ratio and strain. The second is the geometric influence of the curvature of the insulator-semiconductor interface during bending or buckling. This paper models the role of curvature on TFT performance and brings to light an elegant result wherein the TFT characteristics is dependent on the area under the capacitance-distance curve. The paper compares models with simulations and explains several experimental findings reported in literature.

Amalraj, Rex; Sambandan, Sanjiv, E-mail: sanjiv@iap.iisc.ernet.in [Flexible Electronics Lab, Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012 (India)

2014-10-28T23:59:59.000Z

405

International Conference on Technological Advances of Thin Films & Surface Coatings (Thin Films 2008), Singapore, 13-16 July 2008  

E-Print Network [OSTI]

were examined by XRD, UV-Vis, AFM and SEM. Compared with pure titania, the UV-Vis spectra of some Mn by the degradation of mono-chloroacetic acid in a microwave field using mercury electrodeless discharge lamp. The degradation efficiency of MCAA on some Mn+ doped TiO2 was higher than those of pure TiO2. Thin Films 212 #12;

Cirkva, Vladimir

406

Methods for fabricating thin film III-V compound solar cell  

DOE Patents [OSTI]

The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

2011-08-09T23:59:59.000Z

407

Diamond Magnetometry of Superconducting Thin Films  

E-Print Network [OSTI]

In recent years diamond magnetometers based on the nitrogen-vacancy (NV) center have been of considerable interest for magnetometry applications at the nanoscale. An interesting application which is well suited for NV centers is the study of nanoscale magnetic phenomena in superconducting materials. We employ the magnetic sensitivity of NV centers in diamond to interrogate the magnetic properties of a thin-layer yttrium barium copper oxide (YBCO) superconductor. Using fluorescence-microscopy methods and samples integrated with an NV sensor on a microchip, we measure the temperature of phase transition in the layer to be 70.0(2) K, and the penetration field of vortices to be 46(4) G. We observe the pinning of the vortices in the layer at 65 K, and estimate their density after cooling the sample in a ~ 10 G field to be 0.45(1) \\mu m^{-2}. These measurements are done with a 10 nm thick NV layer, so that high spatial resolution may be enabled in the future. Based on these results, we anticipate that this magnetometer could be useful for imaging the structure and dynamics of vortices. As an outlook, we present a fabrication method for a superconductor chip designed for this purpose.

A. Waxman; H. Schlussel; D. Groswasser; V. M. Acosta; L. -S. Bouchard; D. Budker; R. Folman

2014-02-05T23:59:59.000Z

408

Microwave plasma assisted supersonic gas jet deposition of thin film materials  

DOE Patents [OSTI]

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

Schmitt, J.J. III; Halpern, B.L.

1993-10-26T23:59:59.000Z

409

Studies of Block Copolymer Thin Films and Mixtures with an Ionic Liquid  

E-Print Network [OSTI]

identification of structure and domain size in block copolymer thin films using RSoXS enables a quantitative comparison of the bulk

Virgili, Justin

2009-01-01T23:59:59.000Z

410

Electrochemical kinetics of thin film vanadium pentoxide cathodes for lithium batteries  

E-Print Network [OSTI]

Electrochemical experiments were performed to investigate the processing-property-performance relations of thin film vanadium pentoxide cathodes used in lithium batteries. Variations in microstructures were achieved via ...

Mui, Simon C., 1976-

2005-01-01T23:59:59.000Z

411

E-Print Network 3.0 - active thin films Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Western Ontario a JOINT presentation of the Summary: and conducting thin films for optoelectronic applications from carbon nanotubes and graphene" ABSTRACT: Low... . The interest...

412

Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy  

SciTech Connect (OSTI)

Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructure after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases.

Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zhang, Yanmin; Hu, Ran; Ren, Naifei [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-11-14T23:59:59.000Z

413

Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics  

E-Print Network [OSTI]

Pulsed plasma enhanced chemical vapor deposition has produced organosilicon thin films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Both diethylsilane and ...

Ross, April Denise, 1977-

2005-01-01T23:59:59.000Z

414

Synthesis of nanomesh, thin film nanocomposite, nanocomposite membranes and synthesis of potassium ion selective membrane electrodes  

E-Print Network [OSTI]

Synthesis of nanomesh, thin film nanocomposite, nanocomposite membranes and synthesis of potassium and naofibers, which has potential use in protection of agricultural products from hailing. We developed

Singh, Jayant K.

415

abrasion-resistant thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

416

al-cu-fe thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

417

alendronate-hydroxyapatite thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

418

as2s3 thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

films Engineering Websites Summary: of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from the switching mechanisms of...

419

amorphous silicon thin-film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

amorphous silicon Kanicki, Jerzy 17 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

420

ag-in-se thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Alta Devices Develops World Record Setting Thin-Film Solar Cell  

Office of Energy Efficiency and Renewable Energy (EERE)

EERE supported the development of Alta Devices' thin film Gallium Arsenide photovoltaic technology that set a world record for conversion efficiency.

422

Ge doped HfO{sub 2} thin films investigated by x-ray absorption spectroscopy  

SciTech Connect (OSTI)

The stability of the tetragonal phase of Ge doped HfO{sub 2} thin films on Si(100) was investigated. Hf(Ge)O{sub 2} films with Ge atomic concentrations varying from 0% to 15% were deposited by remote plasma chemical vapor deposition. The atomic structure on the oxide after rapid thermal annealing was investigated by x-ray absorption spectroscopy of the O and Ge K edges and by Rutherford backscattering spectrometry. The authors found that Ge concentrations as low as 5 at. % effectively stabilize the tetragonal phase of 5 nm thick Hf(Ge)O{sub 2} on Si and that higher concentrations are not stable to rapid thermal annealing at temperatures above 750 deg. C.

Miotti, Leonardo; Bastos, Karen P.; Lucovsky, Gerald; Radtke, Claudio; Nordlund, Dennis [Department of Physics, North Carolina State University, Box 8202, Raleigh, North Carolina 27695-8202 (United States); Instituto de Quimica, Universidade Federal do Rio Grande do Sul, 91509-900 Porto Alegre (Brazil); Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States)

2010-07-15T23:59:59.000Z

423

Sol-gel preparation of lead magnesium niobate (PMN) powders and thin films  

DOE Patents [OSTI]

A method of preparing a lead magnesium niobium oxide (PMN), Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}, precursor solution by a solvent method wherein a liquid solution of a lead-complex PMN precursor is combined with a liquid solution of a niobium-complex PMN precursor, the combined lead- and niobium-complex liquid solutions are reacted with a magnesium-alkyl solution, forming a PMN precursor solution and a lead-based precipitate, and the precipitate is separated from the reacted liquid PMN precursor solution to form a precipitate-free PMN precursor solution. This precursor solution can be processed to form both ferroelectric powders and thin films. 3 figs.

Boyle, T.J.

1999-01-12T23:59:59.000Z

424

Sol-Gel Preparation Of Lead Magnesium Ni Obate (Pmn) Powdersand Thin Films  

DOE Patents [OSTI]

A method of preparing a lead magnesium niobium oxide (PMN), Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3, precursor solution by a solvent method wherein a liquid solution of a lead-complex PMN precursor is combined with a liquid solution of a niobium-complex PMN precursor, the combined lead- and niobium-complex liquid solutions are reacted with a magnesium-alkyl solution, forming a PMN precursor solution and a lead-based precipitate, and the precipitate is separated from the reacted liquid PMN precursor solution to form a precipitate-free PMN precursor solution. This precursor solution can be processed to form both ferroelectric powders and thin films.

Boyle, Timothy J. (Albuquerque, NM)

1999-01-12T23:59:59.000Z

425

Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors  

SciTech Connect (OSTI)

We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300?°C exhibit good operation characteristics; while those annealed at ?400?°C show deteriorated ones. Thermal desorption spectra (TDS) of H{sub 2}O indicate that this threshold annealing temperature corresponds to depletion of H{sub 2}O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300–430?°C. A plausible structural model is suggested.

Hanyu, Yuichiro, E-mail: y-hanyu@lucid.msl.titech.ac.jp; Domen, Kay [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan)] [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Nomura, Kenji [Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan)] [Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan); Hiramatsu, Hidenori; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan) [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan); Kumomi, Hideya [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan)] [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan) [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan)

2013-11-11T23:59:59.000Z

426

Magnetism of Complex Oxide Thin Films and Heterostructures  

E-Print Network [OSTI]

Introduction to Frustrated Magnetism, edited by C. Lacroix,Stöhr and H.C. Siegmann, in Magnetism: From Fundamentals to18] J. B. Goodenough, in Magnetism and the Chemical Bond, (

Iwata, Jodi

2012-01-01T23:59:59.000Z

427

Optoelectronics Devices Based on Zinc Oxide Thin Films and Nanostructures  

E-Print Network [OSTI]

is promising for UV optoelectronics, such as photodetectors,for future ZnO optoelectronics. References Ü. Özgür, Ya. I.OF THE DISSERTATION Optoelectronics Devices Based on Zinc

Chu, Sheng

2011-01-01T23:59:59.000Z

428

Characterization of iron oxide thin films for photoelectrochemical hydrogen production.  

E-Print Network [OSTI]

??Solar energy is the most sustainable source of energy available. However, solar applications such as photovoltaic cells represent only a partial solution to weaning our… (more)

George, Kyle Eustace Nelson

2009-01-01T23:59:59.000Z

429

Growth and Characterization of Epitaxial Oxide Thin Films  

E-Print Network [OSTI]

out during past three years has been published as follows: 1. A. Garg, J. A. Leake, and Z. H. Barber, Epitaxial Growth of WO3 Films on SrTiO3 and R- Sapphire, J. Phys.: D, Appl. Phys., 33 (9), 1048 (2000) 2. A. Garg, S. Dunn, and Z. H. Barber, Growth... of these films by 3-D Stranski-Krastanov mode. However, these films did not exhibit any ferroelectric activity. Highly epitaxial (116)-oriented films were deposited on SrTiO3 (110) substrates. These films were also very smooth with root mean square (RMS...

Garg, Ashish

430

Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

shifts, as opposed to charge injection into the dielectric or trapping due to oxygen vacancies. Citation: Rajachidambaram MS, A Pandey, S Vilayur Ganapathy, P Nachimuthu, S...

431

B{sub 4}C thin films for neutron detection  

SciTech Connect (OSTI)

Due to the very limited availability of {sup 3}He, new kinds of neutron detectors, not based on {sup 3}He, are urgently needed. Here, we present a method to produce thin films of {sup 10}B{sub 4}C, with maximized detection efficiency, intended to be part of a new generation of large area neutron detectors. B{sub 4}C thin films have been deposited onto Al-blade and Si wafer substrates by dc magnetron sputtering from {sup nat}B{sub 4}C and {sup 10}B{sub 4}C targets in an Ar discharge, using an industrial deposition system. The films were characterized with scanning electron microscopy, elastic recoil detection analysis, x-ray reflectivity, and neutron radiography. We show that the film-substrate adhesion and film purity are improved by increased substrate temperature and deposition rate. A deposition rate of 3.8 A/s and substrate temperature of 400 deg. C result in films with a density close to bulk values and good adhesion to film thickness above 3 {mu}m. Boron-10 contents of almost 80 at. % are obtained in 6.3 m{sup 2} of 1 {mu}m thick {sup 10}B{sub 4}C thin films coated on Al-blades. Initial neutron absorption measurements agree with Monte Carlo simulations and show that the layer thickness, number of layers, neutron wavelength, and amount of impurities are determining factors. The study also shows the importance of having uniform layer thicknesses over large areas, which for a full-scale detector could be in total {approx}1000 m{sup 2} of two-side coated Al-blades with {approx}1 {mu}m thick {sup 10}B{sub 4}C films.

Hoeglund, Carina [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linkoeping University, SE-581 83 Linkoeping (Sweden); Birch, Jens; Jensen, Jens; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linkoeping University, SE-581 83 Linkoeping (Sweden); Andersen, Ken; Hall-Wilton, Richard [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Bigault, Thierry; Buffet, Jean-Claude; Correa, Jonathan; Esch, Patrick van; Guerard, Bruno; Piscitelli, Francesco [Institute Laue Langevin, Rue Jules Horowitz, FR-380 00 Grenoble (France); Khaplanov, Anton [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Institute Laue Langevin, Rue Jules Horowitz, FR-380 00 Grenoble (France); Vettier, Christian [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); European Synchrotron Radiation Facility, BP 220, FR-380 43 Grenoble Cedex 9 (France); Vollenberg, Wilhelmus [Vacuum, Surfaces and Coatings Group (TE/VSC), CERN, CH-1211 Geneva 23 (Switzerland)

2012-05-15T23:59:59.000Z

432

Durable silver thin film coating for diffraction gratings  

DOE Patents [OSTI]

A durable silver film thin film coated non-planar optical element has been developed to replace Gold as a material for fabricating such devices. Such a coating and resultant optical element has an increased efficiency and is resistant to tarnishing, can be easily stripped and re-deposited without modifying underlying grating structure, improves the throughput and power loading of short pulse compressor designs for ultra-fast laser systems, and can be utilized in variety of optical and spectrophotometric systems, particularly high-end spectrometers that require maximized efficiency.

Wolfe, Jesse D. (Discovery Bay, CA); Britten, Jerald A. (Oakley, CA); Komashko, Aleksey M. (San Diego, CA)

2006-05-30T23:59:59.000Z

433

Oriented niobate ferroelectric thin films for electrical and optical devices  

DOE Patents [OSTI]

Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or cyrstalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

Wessels, Bruce W. (Wilmette, IL); Nystrom, Michael J. (Chicago, IL)

2001-01-01T23:59:59.000Z

434

Control of magnetization reversal in oriented strontium ferrite thin films  

SciTech Connect (OSTI)

Oriented Strontium Ferrite films with the c axis orientation were deposited with varying oxygen partial pressure on Al{sub 2}O{sub 3}(0001) substrate using Pulsed Laser Deposition technique. The angle dependent magnetic hysteresis, remanent coercivity, and temperature dependent coercivity had been employed to understand the magnetization reversal of these films. It was found that the Strontium Ferrite thin film grown at lower (higher) oxygen partial pressure shows Stoner-Wohlfarth type (Kondorsky like) reversal. The relative importance of pinning and nucleation processes during magnetization reversal is used to explain the type of the magnetization reversal with different oxygen partial pressure during growth.

Roy, Debangsu, E-mail: debangsu@physics.iisc.ernet.in; Anil Kumar, P. S. [Department of Physics, Indian Institute of Science, Bangalore 560012 (India)

2014-02-21T23:59:59.000Z

435

Laser-induced metallic nanograined thin films processing  

SciTech Connect (OSTI)

A direct laser writing method for designing metallic nanograined thin films is presented. This method takes advantage of photon conversion within a chemical process localized at the focal point. A computer controlled positioning system allows the control of experimental parameters and spatial resolution of the pattern. Spectroscopic investigations reveal variable attenuation of the optical properties in UV-visible range and a spectral imaging processing algorithm simulated the functionality of these films in visible light. This could be an important step for obtaining neutral density attenuators.

Tosa, Nicoleta, E-mail: nicoleta.tosa@itim-cj.ro, E-mail: florin.toadere@itim-cj.ro; Toadere, Florin, E-mail: nicoleta.tosa@itim-cj.ro, E-mail: florin.toadere@itim-cj.ro; Hojbota, Calin, E-mail: nicoleta.tosa@itim-cj.ro, E-mail: florin.toadere@itim-cj.ro; Tosa, Valer, E-mail: nicoleta.tosa@itim-cj.ro, E-mail: florin.toadere@itim-cj.ro [National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath., 400293 Cluj-Napoca (Romania)] [National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath., 400293 Cluj-Napoca (Romania)

2013-11-13T23:59:59.000Z

436

Electron cyclotron resonance microwave ion sources for thin film processing  

SciTech Connect (OSTI)

Plasmas created by microwave absorption at the electron cyclotron resonance (ECR) are increasingly used for a variety of plasma processes, including both etching and deposition. ECR sources efficiently couple energy to electrons and use magnetic confinement to maximize the probability of an electron creating an ion or free radical in pressure regimes where the mean free path for ionization is comparable to the ECR source dimensions. The general operating principles of ECR sources are discussed with special emphasis on their use for thin film etching. Data on source performance during Cl base etching of Si using an ECR system are presented. 32 refs., 5 figs.

Berry, L.A.; Gorbatkin, S.M.

1990-01-01T23:59:59.000Z

437

Fractal-Mound Growth of Pentacene Thin Films  

E-Print Network [OSTI]

The growth mechanism of pentacene film formation on SiO2 substrate was investigated with a combination of atomic force microscopy measurements and numerical modeling. In addition to the diffusion-limited aggregation (DLA) that has already been shown to govern the growth of the ordered pentacene thin films, it is shown here for the first time that the Schwoebel barrier effect steps in and disrupts the desired epitaxial growth for the subsequent layers, leading to mound growth. The terraces of the growing mounds have a fractal dimension of 1.6, indicating a lateral DLA shape. This novel growth morphology thus combines horizontal DLA-like growth with vertical mound growth.

Serkan Zorba; Yonathan Shapir; Yongli Gao

2006-10-19T23:59:59.000Z

438

Guided Self-Assembly of Gold Thin Films  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr FlickrGuided Self-Assembly of Gold Thin Films Print

439

Guided Self-Assembly of Gold Thin Films  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr FlickrGuided Self-Assembly of Gold Thin Films PrintGuided

440

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells  

DOE Patents [OSTI]

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Ramanathan, Kannan V. (Lakewood, CA); Contreras, Miguel A. (Golden, CA); Bhattacharya, Raghu N. (Littleton, CA); Keane, James (Lakewood, CA); Noufi, Rommel (Golden, CA)

1999-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts  

DOE Patents [OSTI]

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Jansen, Kai W. (Lawrenceville, NJ); Maley, Nagi (Exton, PA)

2001-01-01T23:59:59.000Z

442

Gas sensing properties of magnesium doped SnO{sub 2} thin films in relation to AC conduction  

SciTech Connect (OSTI)

Conducting magnesium doped (0 to 1.5 wt %) tin oxide thin films prepared by Spray Pyrolysis technique achieved detection of 1000 ppm of LPG. The films deposited at 304 °C exhibit an enhanced response at an operating temperature of 350 °C. The microstructural properties are studied by means of X-ray diffraction. AC conductivity measurements are carried out using precision LCR meter to analyze the parameters that affect the variation in sensing. The results are correlated with compositional parameters and the subsequent modification in the charge transport mechanism facilitating an enhanced LPG sensing action.

Deepa, S.; Skariah, Benoy, E-mail: dr.boben1@gmail.com; Thomas, Boben, E-mail: dr.boben1@gmail.com [Research Centre in Physics, Mar Athanasius College, Kothamangalam P.O., Kerala 686 666 (India); Joseph, Anisha [Dept.of Physics, Holy Grace Academy of Engineering for Women, Mala, Kerala 683 102 (India)

2014-01-28T23:59:59.000Z

443

Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor  

E-Print Network [OSTI]

The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

Nominanda, Helinda

2004-01-01T23:59:59.000Z

444

Residual Stress Relaxation and Microstructure in ZnO Thin Films Istem Ozena  

E-Print Network [OSTI]

to be eliminated during deposition. Introduction In this study, the decay of the residual stressesResidual Stress Relaxation and Microstructure in ZnO Thin Films Istem Ozena and Mehmet Ali Gulgunb. a istem@sabanciuniv.edu b m-gulgun@sabanciuniv.edu Keywords: ZnO, thin films, residual stress

Yanikoglu, Berrin

445

NONLINEAR SAW PROPAGATION IN THIN-FILM SYSTEMS WITH RESIDUAL STRESS* R. E. Kumon  

E-Print Network [OSTI]

harmonics. I. INTRODUCTION AND MOTIVATION The thin-film deposition process can create large residualNONLINEAR SAW PROPAGATION IN THIN-FILM SYSTEMS WITH RESIDUAL STRESS* R. E. Kumon National Institute is the residual stress. The effective elas- tic constants and density are given by Ceff ijkl = Cijkl(1 - eres

446

Influence of Ba content on grain size and dynamics of crystallization in barium ferrite thin films  

E-Print Network [OSTI]

Influence of Ba content on grain size and dynamics of crystallization in barium ferrite thin films of the crystallization process, which ultimately determines the grain size, were studied in barium ferrite thin films. Rapid thermal annealing was used to crystallize the amorphous as-deposited barium ferrite films

Laughlin, David E.

447

Thin-film Lithium Niobate Contour-mode Resonators Renyuan Wang and Sunil A. Bhave  

E-Print Network [OSTI]

Thin-film Lithium Niobate Contour-mode Resonators Renyuan Wang and Sunil A. Bhave School Micro Devices, Inc. Greensboro, North Carolina, USA Abstract--This paper presents Lithium Niobate (LN this platform, we demonstrate, on a black Y136 cut Lithium Niobate thin-film, one-port high-order width

Afshari, Ehsan

448

The effect of stress on the dielectric properties of barium strontium titanate thin films  

E-Print Network [OSTI]

The effect of stress on the dielectric properties of barium strontium titanate thin films T. M Barium strontium titanate thin films are being developed as capacitors in dynamic random access memories to their large permittivities, barium strontium titan- ate BST bulk ceramics have long been used to make high

Suo, Zhigang

449

High tunability barium strontium titanate thin films for rf circuit applications  

E-Print Network [OSTI]

High tunability barium strontium titanate thin films for rf circuit applications N. K. Pervez,a) P) Large variations in the permittivity of rf magnetron sputtered thin-film barium strontium titanate have/cm. © 2004 American Institute of Physics. [DOI: 10.1063/1.1818724] Barium strontium titanate (BST) is a solid

York, Robert A.

450

Optimization of High Tunability Barium Strontium Titanate Thin Films Grown by RF Magnetron  

E-Print Network [OSTI]

Optimization of High Tunability Barium Strontium Titanate Thin Films Grown by RF Magnetron Abstract-- Barium strontium titanate is a solid solution perovskite with a field-dependent permittivity.7 MV/cm. I. INTRODUCTION In recent years there has been much interest in thin-film barium strontium

York, Robert A.

451

Discrete Barium Strontium Titanate (BST) Thin-Film Interdigital Varactors on Alumina: Design, Fabrication, Characterization, and  

E-Print Network [OSTI]

Discrete Barium Strontium Titanate (BST) Thin-Film Interdigital Varactors on Alumina: Design, Raleigh, NC-27695-7914, USA. Email:jayeshnath@ieee.org Abstract -- Discrete Barium Strontium Titanate (BST, capacitors, BST, ferroelectric, thin-film, barium strontium titanate, bandpass filter, IP3, ACPR, temperature

452

Self-similar solutions for a fractional thin film equation governing hydraulic fractures  

E-Print Network [OSTI]

Self-similar solutions for a fractional thin film equation governing hydraulic fractures C. Imbert equation governing hydraulic fractures are constructed. One of the boundary con- ditions, which accounts, 35R11, 35C06 Keywords: Hydraulic fractures, higher order equation, thin films, fractional Laplacian

Boyer, Edmond

453

Rubbery Graft Copolymer Electrolytes for Solid-State, Thin-Film Lithium Batteries  

E-Print Network [OSTI]

Rubbery Graft Copolymer Electrolytes for Solid-State, Thin-Film Lithium Batteries Patrick E. Trapa to be stable over a wide temperature range and voltage window. Solid-state, thin-film batteries comprised triflate-doped POEM-g-PDMS, which exhibited solid-like mechanical behavior, were nearly identical to those

Sadoway, Donald Robert

454

Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices  

DOE Patents [OSTI]

Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

Nastasi, Michael Anthony; Wang, Yongqiang; Fraboni, Beatrice; Cosseddu, Piero; Bonfiglio, Annalisa

2013-06-11T23:59:59.000Z

455

Fully Integrated Applications of Thin Films on Low Temperature Cofired Ceramic (LTCC)  

SciTech Connect (OSTI)

Thin film multilayers have previously been introduced on multilayer low temperature cofired ceramic (LTCC), as well as initial thin film capacitors on LTCC. The ruggedness of a multipurpose Ti-Cu-Pt-Au stack for connectivity and RF conductivity has continued to benefit fabrication and reliability in state of-the-art modules, while the capacitors have followed the traditional Metal-Insulator-Metal (MIM) style. The full integration of thin film passives with thin film connectivity traces is presented. Certain passives, such as capacitors, require specifically tailored and separately patterned thin film (multi-)layers, including a dielectric. Different capacitance values are achieved by variation of both the insulator layer thickness and the active area of the capacitor. Other passives, such as filters, require only the conductor - a single thin film multilayer. This can be patterned from the same connectivity thin film material (Ti-Cu-Pt-Au), or a specially tailored thin film material (e.g. Ti-Cu-Au) can be deposited. Both versions are described, including process and integration details. Examples are discussed, ranging from patterning for maximum tolerances, to space and performance-optimized designs. Cross-sectional issues associated with integration are also highlighted in the discussion.

Ambrose Wolf; Ken Peterson; Matt O'Keefe; Wayne Huebner; Bill Kuhn

2012-04-19T23:59:59.000Z

456

Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films  

E-Print Network [OSTI]

Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films A. Bulusu and D. G. Walker1 Interdisciplinary Program in Material Science Vanderbilt University Nashville on device characteristics of 1D and 2D thin film superlattices whose applications include thermoelectric

Walker, D. Greg

457

High Frequency Characteristicsof NanocompositeThin Film "Supercapacitors" and their Suitability For EmbeddedDecoupling  

E-Print Network [OSTI]

High Frequency Characteristicsof NanocompositeThin Film "Supercapacitors" and their Suitability, the capacitance density would be much lower. Newer capacitor concepts such as supercapacitors can overcome and the suitability of the thin film supercapacitors for high-frequency decoupling applications will be discussed. 1

Swaminathan, Madhavan

458

Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells  

E-Print Network [OSTI]

Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells Nicholas P of solar energy conversion be- cause they use thin films of photoactive material and can be manufactured and photocurrent in flexible organic solar cells. We demonstrate that this enhancement is attributed to a broadband

Fan, Shanhui

459

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network [OSTI]

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

460

Nano-photonic Light Trapping In Thin Film Solar Dennis M. Callahan Jr.  

E-Print Network [OSTI]

Nano-photonic Light Trapping In Thin Film Solar Cells Thesis by Dennis M. Callahan Jr. In Partial. Jeremy Munday for helping me get started on the thin-film GaAs project and for all the time we spent to thank Dr. Jonathan Grandidier for working closely with me for a couple years on the nano sphere solar

Winfree, Erik

Note: This page contains sample records for the topic "thin-film oxide interfaces" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

METAL BLACKS AS SCATTERING CENTERS TO INCREASE THE EFFICIENCY OF THIN FILM SOLAR CELLS  

E-Print Network [OSTI]

METAL BLACKS AS SCATTERING CENTERS TO INCREASE THE EFFICIENCY OF THIN FILM SOLAR CELLS by DEEP R surface of thin-film solar cells to improve efficiency. The principle is that scattering, which film solar cell. The particular types of particles investigated here are known as "metal-black", well

Peale, Robert E.

462

EPMA Instructions for Thin Film Samples General guidelines to reading computer related commands  

E-Print Network [OSTI]

EPMA Instructions for Thin Film Samples General guidelines to reading computer related commands: `Single quote' = menu item, window, or icon "Double quote" = something you type = button you your sample, thin film up, on the dot of epoxy 4. Repeat until all samples are on the puck 5. Flip your

463

Electric Field Induced Sphere-to-Cylinder Transition in Diblock Copolymer Thin Films  

E-Print Network [OSTI]

Electric Field Induced Sphere-to-Cylinder Transition in Diblock Copolymer Thin Films Ting Xu, A. V Manuscript Received June 21, 2004 ABSTRACT: An electric field induced sphere-to-cylinder transition in thin. In the absence of an applied electric field, thin films of the asymmetric diblock copolymer consisted of layers

Ocko, Ben

464

Energy harvesting properties of all-thin-film multiferroic cantilevers Tiberiu-Dan Onuta,1,a)  

E-Print Network [OSTI]

Energy harvesting properties of all-thin-film multiferroic cantilevers Tiberiu-Dan Onuta,1,a) Yi 18 November 2011) We have measured electromagnetic energy harvesting properties of all piezoelectric thin film. The harvested peak power at 1 Oe is 0.7 mW/cm3 (RMS) at the resonant frequency (3.8 k

Rubloff, Gary W.

465

Measuring the fracture toughness of ultra-thin films with application to AlTa coatings  

E-Print Network [OSTI]

1 Measuring the fracture toughness of ultra-thin films with application to AlTa coatings Yong Xiang Abstract An experimental technique is presented for measuring the fracture toughness of brittle thin films with a focused ion beam and the membranes are pressurized until rupture. The fracture stress of the membrane

466

Carbon nanotube thin films with ordered structures Chunsheng Du,a  

E-Print Network [OSTI]

Carbon nanotube thin films with ordered structures Chunsheng Du,a Jeff Yehb and Ning Pan*a Received December 2004 DOI: 10.1039/b414682d Carbon nanotube thin films with ordered structures have been developed properties, carbon nanotubes have aroused a great deal of research interest, and a wider range of potential

Pan, Ning

467

Mathematical Model of Charge and Density Distributions in Interfacial Polymerization of Thin Films  

E-Print Network [OSTI]

Mathematical Model of Charge and Density Distributions in Interfacial Polymerization of Thin Films INTRODUCTION Interfacial polymerization (IP) as a method of prepa- ration of thin film composite (TFC, and waste treatment. IP is also highly suitable for manufacturing polymeric films, such as polyamides

Freger, Viatcheslav "Slava"

468

X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films  

E-Print Network [OSTI]

X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films T. J. Richardsona@lbl.gov Abstract Mixed metal thin films containing magnesium and a first-row transition element exhibit very large and coordination of the magnesium and transition metal atoms during hydrogen absorption were studied using dynamic

469

Extended light scattering model incorporating coherence for thin-film silicon solar cells  

E-Print Network [OSTI]

Extended light scattering model incorporating coherence for thin-film silicon solar cells Thomas film solar cells. The model integrates coherent light propagation in thin layers with a direct, non potential for light trapping in textured thin film silicon solar cells. VC 2011 American Institute

Lenstra, Arjen K.

470

Plasticity in Cu thin films: an experimental investigation of the effect of microstructure  

E-Print Network [OSTI]

Plasticity in Cu thin films: an experimental investigation of the effect of microstructure A thesis Author Joost J. Vlassak Yong Xiang Plasticity in Cu thin films: an experimental investigation is constructed. The elastic-plastic behavior of Cu films is studied with emphasis on the effects

471

High-throughput analysis of thin-film stresses using arrays of micromachined cantilever beams  

E-Print Network [OSTI]

High-throughput analysis of thin-film stresses using arrays of micromachined cantilever beams Hyun-throughput residual stress measurements on thin films by means of micromachined cantilever beams and an array of parallel laser beams. In this technique, the film of interest is deposited onto a silicon substrate

472

Bill Shafarman 1 May 15, 2013 Thin Film Photovoltaics Research at the  

E-Print Network [OSTI]

Bill Shafarman 1 May 15, 2013 Thin Film Photovoltaics Research at the Institute of Energy of Photovoltaics 2. IEC: History and Capabilities 3. Current Research at IEC #12;Bill Shafarman 2 May 15, 2013 Concentrators #12;Bill Shafarman 5 May 15, 2013 Thin Film Photovoltaics Potential for low cost PV using " a

Firestone, Jeremy

473

Comparative study of the mechanical properties of nanostructured thin films on stretchable substrates  

SciTech Connect (OSTI)

Comparative studies of the mechanical behavior between copper, tungsten, and W/Cu nanocomposite based on copper dispersoïd thin films were performed under in-situ controlled tensile equi-biaxial loadings using both synchrotron X-ray diffraction and digital image correlation techniques. The films first deform elastically with the lattice strain equal to the true strain given by digital image correlation measurements. The Cu single thin film intrinsic elastic limit of 0.27% is determined below the apparent elastic limit of W and W/Cu nanocomposite thin films, 0.30% and 0.49%, respectively. This difference is found to be driven by the existence of as-deposited residual stresses. Above the elastic limit on the lattice strain-true strain curves, we discriminate two different behaviors presumably footprints of plasticity and fracture. The Cu thin film shows a large transition domain (0.60% true strain range) to a plateau with a smooth evolution of the curve which is associated to peak broadening. In contrast, W and W/Cu nanocomposite thin films show a less smooth and reduced transition domain (0.30% true strain range) to a plateau with no peak broadening. These observations indicate that copper thin film shows some ductility while tungsten/copper nanocomposites thin films are brittle. Fracture resistance of W/Cu nanocomposite thin film is improved thanks to the high compressive residual stress and the elimination of the metastable ?-W phase.

Djaziri, S. [Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237 Düsseldorf (Germany); Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Renault, P.-O.; Le Bourhis, E.; Goudeau, Ph., E-mail: Philippe.goudeau@univ-poitiers.fr [Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Faurie, D. [LSPM, (UPR 3407 CNRS), Université Paris 13, Institut Galilée, 99 avenue Jean-Baptiste Clément, 93430 Villetaneuse (France); Geandier, G. [Institut Jean Lamour (UMR 3079 CNRS), Université de Lorraine, Parc de Saurupt, CS 50840, 54011 NANCY Cedex (France); Mocuta, C.; Thiaudière, D. [Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette Cedex (France)

2014-09-07T23:59:59.000Z

474

Highly Stable Hysteresis-Free Carbon Nanotube Thin-Film Transistors by Fluorocarbon Polymer Encapsulation  

E-Print Network [OSTI]

Highly Stable Hysteresis-Free Carbon Nanotube Thin-Film Transistors by Fluorocarbon Polymer report hysteresis-free carbon nanotube thin-film transistors (CNT-TFTs) employing a fluorocarbon polymer (Teflon-AF) as an encapsulation layer. Such fluorocarbon encapsulation improves device uniformity

Javey, Ali

475

Electrochemical Behavior and Li Diffusion Study of LiCoO? Thin Film Electrodes Prepared by PLD  

E-Print Network [OSTI]

Preferred c-axis oriented LiCoO? thin films were prepared on the SiO?/Si (SOS) substrates by pulsed laser deposition (PLD). Thin film electrodes without carbon and binder are ideal samples to study the electrochemical ...

Xia, H.

476

Ultrafast Magnetization Dynamics of SrRuO3 Thin Films  

SciTech Connect (OSTI)

Itinerant ferromagnet SrRuO3 has drawn interest from physicists due to its unusual transport and magnetic properties as well as from engineers due to its low resistivity and good lattice-matching to other oxide materials. The exact electronic structure remains a mystery, as well as details of the interactions between magnetic and electron transport properties. This thesis describes the use of time-resolved magneto-optical Kerr spectroscopy to study the ferromagnetic resonance of SrRuO3 thin films, where the ferromagnetic resonance is initiated by a sudden change in the easy axis direction in response to a pump pulse. The rotation of the easy axis is induced by laser heating, taking advantage of a temperature-dependent easy axis direction in SrRuO3 thin films. By measuring the change in temperature of the magnetic system in response to the laser pulse, we find that the specific heat is dominated by magnons up to unusually high temperature, ~;;100 K, and thermal diffusion is limited by a boundary resistance between the film and the substrate that is not consistent with standard phonon reflection and scattering models. We observe a high FMR frequency, 250 GHz, and large Gilbert damping parameter, alpha ~;; 1, consistent with strong spin-orbit coupling. We observe a time-dependent change in the easy axis direction on a ps time-scale, and we find that parameters associated with the change in easy axis, as well as the damping parameter, have a non-monotonic temperature dependence similar to that observed in anomalous Hall measurements.

Langner, Matthew C

2009-05-19T23:59:59.000Z

477

Adsorption and Reaction of C1-C3 Alcohols over CeOx(111) Thin Films  

SciTech Connect (OSTI)

This study reports the interaction of methanol, ethanol, 1-propanol, and 2-propanol with well-ordered CeO{sub 2}(111) thin film surfaces. All of the alcohols adsorb at low temperature by forming alkoxy and hydroxyl species on the surface. On fully oxidized CeO{sub 2}(111), recombination occurs between some of the alkoxys and hydroxyls, resulting in alcohol desorption near 220 K. At the same temperature, some of the surface hydroxyls disproportionate to produce water and the loss of lattice O. The remaining alkoxys react above 550 K. The primary alcohols favor dehydrogenation products (aldehydes). There is a net loss of O from the system, resulting in a reduction of the ceria. The secondary alcohol, 2-propanol, undergoes primarily dehydration, producing propene with no net change in the cerium oxidation state. Reduced CeO{sub x}(111) competes with the gaseous products for available O. Little or no water is produced. The reaction selectivity for the C{sub 2} and C{sub 3} alcohols shifts toward favoring dehydration products. The loss of O from the alcohols leads to oxidation of the reduced ceria. Compared with the oxidized surface, the alkene desorption shifts to lower temperature, whereas the aldehyde desorption shifts to higher temperature. This indicates that, on the reduced surface, it is easier to break the C-O bond but more difficult to break the O-substrate bond.

D Mullins; S Senanayake; T Chen

2011-12-31T23:59:59.000Z

478

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa  

E-Print Network [OSTI]

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa , Alessio in the fabrication of high efficiency CdTe/CdS thin film solar cells. Usually, it is done first by etching the Cd: Back Contact, CdTe, Thin Film 1 INTRODUCTION The back contact in the CdTe/CdS thin film solar cell

Romeo, Alessandro

479

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network [OSTI]

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

480

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a  

E-Print Network [OSTI]

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a J. D. Servaites thin-film solar cell types: hydrogenated amorphous silicon a-Si:H p-i-n cells, organic bulk understanding of thin film solar cell device physics, including important module performance variability issues

Alam, Muhammad A.

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to obtain the most current and comprehensive results.


481

Enhancement of optical absorption in thin-film organic solar cells through the excitation of plasmonic modes in metallic gratings  

E-Print Network [OSTI]

Enhancement of optical absorption in thin-film organic solar cells through the excitation 2010 We theoretically investigate the enhancement of optical absorption in thin-film organic solar.1063/1.3377791 Thin-film organic solar cells OSCs are a promising candidate for low-cost energy conversion.1­6 However

Veronis, Georgios

482

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network [OSTI]

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells Company has had a conti- nuous effort on thin film solar cells for the past four and a half years

Paris-Sud XI, Université de

483

Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High efficiency and junction property  

E-Print Network [OSTI]

Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High-conductor-free organic lead iodide thin film solar cells have been fabricated with a sequential deposition method are comparable to that of the high-efficiency thin-film solar cells. VC 2014 AIP Publishing LLC. [http

Wang, Wei Hua

484

Growth of plasma-polymerized thin films by PECVD method and study on their surface and optical characteristics  

E-Print Network [OSTI]

Growth of plasma-polymerized thin films by PECVD method and study on their surface and optical properties of plasma-polymerized organic thin films with various RF power. AFM data showed that the plasma-polymerized. The surface and optical properties of as-grown plasma-polymerized thin films were analyzed by contact angle

Boo, Jin-Hyo

485

High Seebeck effects from conducting polymer: Poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) based thin-film device with hybrid metal/polymer/metal architecture  

SciTech Connect (OSTI)

Conductive polymers are of particular interest for thermoelectric applications due to their low thermal conductivity and relatively high electrical conductivity. In this study, commercially available conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) was used in a hybrid metal/polymer/metal thin film design in order to achieve a high Seebeck coefficient with the value of 252lV/k on a relatively low temperature scale. Polymer film thickness was varied in order to investigate its influence on the Seebeck effect. The high Seebeck coefficient indicates that the metal/polymer/metal design can develop a large entropy difference in internal energy of charge carriers between high and low-temperature metal electrodes to develop electrical potential due to charge transport in conducting polymer film through metal/polymer interface. Therefore, the metal/polymer/metal structure presents a new design to combine inorganic metals and organic polymers in thin-film form to develop Seebeck devices

Stanford, Michael G [ORNL; Wang, Hsin [ORNL; Ivanov, Ilia N [ORNL; Hu, Bin [University of Tennessee, Knoxville (UTK)

2012-01-01T23:59:59.000Z

486

Coulomb impurity scattering in topological insulator thin films  

SciTech Connect (OSTI)

Inter-surface coupling in thin-film topological insulators can reduce the surface state mobility by an order of magnitude in low-temperature transport measurements. The reduction is caused by a reduction in the group velocity and an increased s{sub z} component of the surface-state spin which weakens the selection rule against large-angle scattering. An intersurface potential splits the degenerate bands into a Rashba-like bandstructure. This reduces the intersurface coupling, it largely restores the selection rule against large angle scattering, and the ring-shaped valence band further reduces backscattering by requiring, on average, larger momentum transfer for backscattering events. The effects of temperature, Fermi level, and intersurface potential on the Coulomb impurity scattering limited mobility are analyzed and discussed.

Yin, Gen; Wickramaratne, Darshana; Lake, Roger K., E-mail: rlake@ee.ucr.edu [Department of Electrical Engineering, University of California, Riverside, California 92521 (United States); Zhao, Yuanyuan [Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, Texas 77204 (United States)

2014-07-21T23:59:59.000Z

487

Gain properties of dye-doped polymer thin films  

E-Print Network [OSTI]

The demonstration of an electrically pumped organic laser remains a major issue of organic optoelectronics for several decades. Nowadays, hybrid pumping seems a promising compromise where the organic material is optically pumped by an electrically pumped inorganic device on chip. This technical solution requires therefore an optimization of the organic gain medium under optical pumping. Here, we report a detailed study of gain features of dye-doped polymer thin films, in particular we introduce the gain efficiency $K$, in order to facilitate comparison between material and experimental conditions. First, we measure the bulk gain by the means of a pump-probe setup, and then present in details several factors which modify the actual gain of the layer, namely the confinement factor, the pump polarization, the molecular anisotropy, and the re-absorption. The usual model to evaluate the gain leads to an overestimation by more than one order of magnitude, which stresses the importance to design the devices accordin...

Gozhyk, I; Rabbani, H; Djellali, N; Forget, S; Chenais, S; Ulysse, C; Brosseau, A; Gauvin, S; Zyss, J; Lebental, M

2014-01-01T23:59:59.000Z

488

Room-temperature magnetoelectric multiferroic thin films and applications thereof  

DOE Patents [OSTI]

The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.

Katiyar, Ram S; Kuman, Ashok; Scott, James F.

2014-08-12T23:59:59.000Z

489

Improvement in electrochromic stability of electrodeposited nickel hydroxide thin film  

SciTech Connect (OSTI)

The electrochromic nickel hydroxide thin film was anodically deposited from an aqueous solution. The effect of solution temperature, postheat-treatment temperature, and addition of cadmium on the electrochromic behavior (color/bleach durability cycle, response time, and coloration efficiency of the nickel hydroxide films in NaOH) were investigated. A significant increase in the color/bleach durability cycle from 500 (for the as-deposited film) to more than 5000 cycles (for the heat-treated film) was observed. The addition of cadmium increased the utilization of the active materials. It was found that the coloration efficiency was 40 cm{sup 2}/C and coloration and bleaching response time were 20 to 30 s and 8 to 10 s, respectively. The change in the electrochromic properties with heat-treatment temperature is discussed based on the physical and electrochemical analysis.

Natarajan, C.; Matsumoto, H.; Nogami, G. [Kyushu Inst. of Tech., Kitakyushu (Japan). Dept. of Electrical Engineering

1997-01-01T23:59:59.000Z

490

Generation of mirage effect by heated carbon nanotube thin film  

SciTech Connect (OSTI)

Mirage effect, a common phenomenon in nature, is a naturally occurring optical phenomenon in which lights are bent due to the gradient variation of refraction in the temperature gradient medium. The theoretical analysis of mirage effect generated by heated carbon nanotube thin film is presented both for gas and liquid. Excellent agreement is demonstrated through comparing the theoretical prediction with published experimental results. It is concluded from the theoretical prediction and experimental observation that the mirage effect is more likely to happen in liquid. The phase of deflected optical beam is also discussed and the method for measurement of thermal diffusivity of medium is theoretically verified. Furthermore, a method for measuring the refractive index of gas by detecting optical beam deflection is also presented in this paper.

Tong, L. H. [Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230026 (China); USTC-CityU Joint Advanced Research Centre, Suzhou, Jiangsu 215123 (China); Lim, C. W., E-mail: bccwlim@cityu.edu.hk [USTC-CityU Joint Advanced Research Centre, Suzhou, Jiangsu 215123 (China); Department of Civil and Architectural Engineering, City University of Hong Kong, Kowloon, Hong Kong, People’s Republic of China and City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057 (China); Li, Y. C. [Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Zhang, Chuanzeng; Quoc Bui, Tinh [Department of Civil Engineering, University of Siegen, Paul-Bonatz-Str. 9-11, D-57076 Siegen (Germany)

2014-06-28T23:59:59.000Z

491

Equiatomic CoPt thin films with extremely high coercivity  

SciTech Connect (OSTI)

In this paper, magnetic and structural properties of near-equiatomic CoPt thin films, which exhibited a high coercivity in the film-normal direction—suitable for perpendicular magnetic recording media applications—are reported. The films exhibited a larger coercivity of about 6.5 kOe at 8?nm. The coercivity showed a monotonous decrease as the film thickness was increased. The transmission electron microscopy images indicated that the as fabricated CoPt film generally consists of a stack of magnetically hard hexagonal-close-packed phase, followed by stacking faults and face-centred-cubic phase. The thickness dependent magnetic properties are explained on the basis of exchange-coupled composite media. Epitaxial growth on Ru layers is a possible factor leading to the unusual observation of magnetically hard hcp-phase at high concentrations of Pt.

Varghese, Binni; Piramanayagam, S. N., E-mail: Prem-SN@dsi.a-star.edu.sg; Yang, Yi; Kai Wong, Seng; Khume Tan, Hang; Kiat Lee, Wee [Data Storage Institute, (A-STAR) Agency for Science, Technology and Research, DSI Building, 5, Engineering Drive 1, Singapore 117608 (Singapore); Okamoto, Iwao [Western Digital Corporation, Singapore 638552 (Singapore)

2014-05-07T23:59:59.000Z

492

Characterization of Field Exposed Thin Film Modules: Preprint  

SciTech Connect (OSTI)

Test arrays of thin film modules have been deployed at the Solar Energy Centre near New Delhi, India since 2002-2003. Performances of these arrays were reported by O.S. Sastry [1]. This paper reports on NREL efforts to support SEC by performing detailed characterization of selected modules from the array. Modules were selected to demonstrate both average and worst case power loss over the 8 years of outdoor exposure. The modules characterized included CdTe, CIS and three different types of a-Si. All but one of the a-Si types were glass-glass construction. None of the modules had edge seals. Detailed results of these tests are presented along with our conclusions about the causes of the power loss for each technology.

Wohlgemuth, J. H.; Sastry, O. S.; Stokes, A.; Singh, Y. K.; Kumar, M.

2012-06-01T23:59:59.000Z