National Library of Energy BETA

Sample records for thin-film oxide interfaces

  1. Zinc oxide thin film acoustic sensor

    SciTech Connect (OSTI)

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah [Department of Physics , College of Science, Al-Mustansiriyah University, Baghdad (Iraq); Mansour, Hazim Louis [Department of Physics , College of Education, Al-Mustansiriyah University, Baghdad (Iraq)

    2013-12-16

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  2. Thin film hydrous metal oxide catalysts

    DOE Patents [OSTI]

    Dosch, Robert G. (Albuquerque, NM); Stephens, Howard P. (Albuquerque, NM)

    1995-01-01

    Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  3. Multiferroic oxide thin films and heterostructures

    SciTech Connect (OSTI)

    Lu, Chengliang E-mail: Tao.Wu@kaust.edu.sa; Hu, Weijin; Wu, Tom E-mail: Tao.Wu@kaust.edu.sa; Tian, Yufeng

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  4. Nanostructured thin films for solid oxide fuel cells 

    E-Print Network [OSTI]

    Yoon, Jongsik

    2009-05-15

    The goals of this work were to synthesize high performance perovskite based thin film solid oxide fuel cell (TF-SOFC) cathodes by pulsed laser deposition (PLD), to study the structural, electrical and electrochemical properties of these cathodes...

  5. Engineering Gaussian disorder at rough interfaces for light trapping in thin-film solar cells

    E-Print Network [OSTI]

    Engineering Gaussian disorder at rough interfaces for light trapping in thin-film solar cells Piotr A theoretical study of randomly rough interfaces to obtain light trapping in thin-film silicon solar cells of thin-film solar cells. © 2012 Optical Society of America OCIS codes: 040.5350, 050.1950. Reducing

  6. Molybdenum as a contact material in zinc tin oxide thin film transistors

    SciTech Connect (OSTI)

    Hu, W.; Peterson, R. L., E-mail: blpeters@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

    2014-05-12

    Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line method. The width-normalized contact resistance between ZTO and sputtered molybdenum is measured to be 8.7 ?-cm, which is 10, 20, and 600 times smaller than that of gold/titanium, indium tin oxide, and evaporated molybdenum electrodes, respectively. The superior contact formed using sputtered molybdenum is due to a favorable work function lineup, an insulator-free interface, bombardment of ZTO during molybdenum sputtering, and trap-assisted tunneling. The transfer length of the sputtered molybdenum/ZTO contact is 0.34??m, opening the door to future radio-frequency sub-micron molybdenum/ZTO thin film transistors.

  7. Microstructure of amorphous indium oxide and tin oxide thin films

    SciTech Connect (OSTI)

    Rauf, I.A.; Brown, L.M. (Univ. of Cambridge (United Kingdom))

    1994-03-15

    Indium oxide, tin oxide, and some other doped and undoped oxide semiconductors show an interesting and technologically important combination of properties. They have high luminous transparency, good electrical conductivity and high infrared reflectivity. Numerous techniques for depositing these materials have been developed and have undergone a number of changes during last two decades. An understanding of the basic physics of these materials has begun to dawn. Most of the literature on transparent conducting oxides consists of studying the dependence of the properties on the composition, preparation conditions, such as deposition rate, substrate temperature or post-deposition heat treatment. In this paper the authors have employed the transmission electron microscopy to study the microstructure of reactively evaporated, electron beam evaporated, ion-beam sputtered amorphous indium oxide and reactively evaporated amorphous tin oxide thin films. These films, which have received little attention in the past, can have enormous potential as transparent conductive coatings on heat-sensitive substrates and inexpensive solar cells.

  8. Molecular Dynamics Simulation of Thin Films with Rough and Asymmetric Interfaces

    E-Print Network [OSTI]

    Walker, D. Greg

    Molecular Dynamics Simulation of Thin Films with Rough and Asymmetric Interfaces N.A. Roberts with the use of interfaces and shows that pristine, imperfect and asymmetric interfaces in thin films can interface whose features are of the order of the phonon wavelength. At a constant temperature difference

  9. RF sputtered piezoelectric zinc oxide thin film for transducer applications

    E-Print Network [OSTI]

    Tang, William C

    parameters that could influence the quality of the resulting films include RF power, the ratio of argon depen- dency of the c-axis zinc oxide growth in radio-frequency sputtering system. Different deposition on the piezoelectric and crystalline qualities of the ZnO thin films. Experimental results showed that the multilayer

  10. Physics of thin-film ferroelectric oxides DPMC, University of Geneva, CH-1211, Geneva 4, Switzerland

    E-Print Network [OSTI]

    Wu, Zhigang

    Physics of thin-film ferroelectric oxides M. Dawber* DPMC, University of Geneva, CH-1211, Geneva 4 of thin-film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film form. The authors introduce the current state of development in the application

  11. Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells

    E-Print Network [OSTI]

    Van Stryland, Eric

    Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells Qiumei Bian in the fabrication and assembly of thin film solar cells. Using a femtosecond (fs) laser, we selectively removed a unique scheme to ablate the indium tin-oxide layer for the fabrication of thin film solar cells

  12. Plasticity contributions to interface adhesion in thin-film interconnect structures

    E-Print Network [OSTI]

    Vainchtein, Anna

    Plasticity contributions to interface adhesion in thin-film interconnect structures Michael Lanea of plasticity in thin copper layers on the interface fracture resistance in thin-film interconnect structures yield properties together with a plastic flow model for the metal layers were used to predict

  13. Nitrogen doped zinc oxide thin film

    SciTech Connect (OSTI)

    Li, Sonny X.

    2003-12-15

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  14. Unexpected behaviour of one Pb monolayer deposited on aluminum oxide thin film grown on Ag(111)

    SciTech Connect (OSTI)

    Vizzini, Sébastien, E-mail: sebastien.vizzini@im2np.fr; Bertoglio, M. [IM2NP CNRS, Aix Marseille Université, F-13397 Marseille (France)] [IM2NP CNRS, Aix Marseille Université, F-13397 Marseille (France); Oughaddou, Hamid [Institut des Sciences Moléculaires d'Orsay, ISMO CNRS, Université de Paris, F-91405 Orsay, France and Deptartamento de Physique, Université de Cergy-Pontoise, F-95031 Cergy-Pontoise (France)] [Institut des Sciences Moléculaires d'Orsay, ISMO CNRS, Université de Paris, F-91405 Orsay, France and Deptartamento de Physique, Université de Cergy-Pontoise, F-95031 Cergy-Pontoise (France); Hoarau, J. Y.; Biberian, J. P.; Aufray, B. [CINaM CNRS, Aix Marseille Université, F-13288 Marseille (France)] [CINaM CNRS, Aix Marseille Université, F-13288 Marseille (France)

    2013-12-23

    Using scanning tunneling microscopy (STM), Auger electron spectroscopy, and low energy electron diffraction, we have observed a surprising complete dissolution at room temperature of one lead monolayer deposited by evaporation on an aluminum oxide thin film (?0.8?nm thick) previously grown on Ag (111). We have observed the quasi-instantaneous diffusion of the lead deposit through the oxide layer to the silver/oxide interface. After the diffusion process, lead atoms form a Moiré superstructure, which is characterized by STM through the oxide layer. This unexpected behavior puts in light the very weak interaction between the aluminum oxide and the silver substrate.

  15. High quality transparent conducting oxide thin films

    DOE Patents [OSTI]

    Gessert, Timothy A. (Conifer, CO); Duenow, Joel N. (Golden, CO); Barnes, Teresa (Evergreen, CO); Coutts, Timothy J. (Golden, CO)

    2012-08-28

    A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

  16. Study of lithium diffusion in RF sputtered Nickel/Vanadium mixed oxides thin films

    E-Print Network [OSTI]

    Artuso, Florinda

    Study of lithium diffusion in RF sputtered NickelÁ/Vanadium mixed oxides thin films F. Artuso a lithium insertion inside RF sputtered Ni/V mixed oxides thin films have been investigated employing, showed three steps clearly involved in the intercalation mechanism of lithium in the oxide films: (i

  17. Intermixing at the absorber-buffer layer interface in thin-film...

    Office of Scientific and Technical Information (OSTI)

    Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S)sub 2 and Cusub 2ZnSn(Se,S)sub 4...

  18. The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact

    SciTech Connect (OSTI)

    Gerlach, D.; Wilks, R. G.; Wimmer, M.; Felix, R.; Gorgoi, M.; Lips, K.; Rech, B.; Wippler, D.; Mueck, A.; Meier, M.; Huepkes, J.; Lozac'h, M.; Ueda, S.; Sumiya, M.; Yoshikawa, H.; Kobayashi, K.; Baer, M.

    2013-07-08

    The electronic structure of the interface between the boron-doped oxygenated amorphous silicon 'window layer' (a-SiO{sub x}:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon ({mu}c-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (-2.87 {+-} 0.27) eV and (-3.37 {+-} 0.27) eV, respectively. A lower tunnel junction barrier height at the {mu}c-Si:H(B)/ZnO:Al interface compared to that at the a-SiO{sub x}:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a {mu}c-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.

  19. Optimization and Characterization of RF Sputtered Piezoelectric Zinc Oxide Thin Film for

    E-Print Network [OSTI]

    Tang, William C

    Oxide (ZnO) thin films had been found to have unique piezoelectric effect for the applicationsOptimization and Characterization of RF Sputtered Piezoelectric Zinc Oxide Thin Film for Transducer Applications Yu-Hsiang Hsu, John Lin, and William C. Tang* Department of Biomedical Engineering University

  20. Role of oxide thickening in fatigue crack initiation in LIGA nickel MEMS thin films

    E-Print Network [OSTI]

    Shan, Wanliang

    Role of oxide thickening in fatigue crack initiation in LIGA nickel MEMS thin films W.L. Shan a 2012 Accepted 16 October 2012 Available online 24 October 2012 Keywords: LIGA Ni MEMS thin films Oxide micro-electro-mechanical-systems (MEMS) structures. & 2012 Elsevier B.V. All rights reserved. 1

  1. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    DOE Patents [OSTI]

    Perkins, John (Boulder, CO); Van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David (Evergreen, CO); Taylor, Matthew (Golden, CO); Neuman, George A. (Holland, MI); Luten, Henry A. (Holland, MI); Forgette, Jeffrey A. (Hudsonville, MI); Anderson, John S. (Holland, MI)

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  2. Studies on nickel-tungsten oxide thin films

    SciTech Connect (OSTI)

    Usha, K. S. [Department of Physics, Alagappa University, Karaikudi - 630 004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi - 630 004 (India); Sanjeeviraja, C. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi - 630 004 (India)

    2014-10-15

    Nickel-Tungsten oxide (95:5) thin films were prepared by rf sputtering at 200W rf power with various substrate temperatures. X-ray diffraction study reveals the amorphous nature of films. The substrate temperature induced decrease in energy band gap with a maximum transmittance of 71%1 was observed. The Micro-Raman study shows broad peaks at 560 cm{sup ?1} and 1100 cm{sup ?1} correspond to Ni-O vibration and the peak at 860 cm{sup ?1} can be assigned to the vibration of W-O-W bond. Photoluminescence spectra show two peaks centered on 420 nm and 485 nm corresponding to the band edge emission and vacancies created due to the addition of tungsten, respectively.

  3. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

    1998-05-19

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

  4. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

    1998-01-01

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  5. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

    1999-01-01

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  6. Near-infrared photodetector consisting of J-aggregating cyanine dye and metal oxide thin films

    E-Print Network [OSTI]

    Osedach, Timothy P.

    We demonstrate a near-infrared photodetector that consists of a thin film of the J-aggregating cyanine dye, U3, and transparent metal-oxide charge transport layers. The high absorption coefficient of the U3 film, combined ...

  7. Magneto-optical and multiferroic oxide thin films, integrated nonreciprocal photonic devices and multiferroic memory devices

    E-Print Network [OSTI]

    Onbas??l?, Mehmet Cengiz

    2015-01-01

    Complex oxide thin films offer unique functionalities which can potentially extend the utility of current storage, processing and optical isolator technologies. In this thesis, we present three categories of studies on ...

  8. Femtosecond pump-probe studies of reduced graphene oxide thin films

    E-Print Network [OSTI]

    Ruzicka, Brian Andrew; Werake, Lalani Kumari; Zhao, Hui; Wang, Shuai; Loh, Kian Ping

    2010-04-01

    The dynamics of photocarriers in reduced graphene oxide thin films is studied by using ultrafast pump-probe spectroscopy. Time dependent differential transmissions are measured with sample temperatures ranging from 9 to 300 K. At each sample...

  9. Defect engineering of cuprous oxide thin-films for photovoltaic applications

    E-Print Network [OSTI]

    Lee, Yun Seog

    2013-01-01

    Thin-film solar cells are promising for renewable-energy applications due to their low material usage and inexpensive manufacturing potential, making them compatible with terawatts-level deployment. Cuprous oxide (Cu?O) ...

  10. Surface spectroscopic characterization of oxide thin films and bimetallic model catalysts 

    E-Print Network [OSTI]

    Wei, Tao

    2009-05-15

    Oxide thin films and bimetallic model catalysts have been studied using metastable impact electron spectroscopy (MIES), ultraviolet photoelectron spectroscopy (UPS), low energy ion scattering spectroscopy (LEISS), X – ray photoelectron spectroscopy...

  11. Properties and sensor performance of zinc oxide thin films

    E-Print Network [OSTI]

    Min, Yongki, 1965-

    2003-01-01

    Reactively sputtered ZnO thin film gas sensors were fabricated onto Si wafers. The atmosphere dependent electrical response of the ZnO micro arrays was examined. The effects of processing conditions on the properties and ...

  12. Formation of thin film Tl-based high-Tc? superconducting oxides from amorphous alloy precursors 

    E-Print Network [OSTI]

    Williams, John Charles

    1991-01-01

    FORMATION OF THIN FILM Tl-BASED HIGH-Tc SUPERCONDUCTING OXIDES FROM AMORPHOUS ALLOY PRECURSORS A Thesis JOHN CHARLES WILLIAMS Submitted to the Once of Graduate Studies of Texas A&M University in partial fulfillment of the requirements... for the degree of MASTER OF SCIENCE December 1991 Major Subject: Physics FORMATION OF THIN FILM Tl BASED HIGH Tc SUPERCONDUCTING OXIDES FROM AMORPHOUS ALLOY PRECURSORS A Thesis JOHN CHARLES WILLIAMS Approved as to style and content by: Donald G. Naugle...

  13. Growth and Oxidation of Thin Film Al(2)Cu

    SciTech Connect (OSTI)

    SON,KYUNG-AH; MISSERT,NANCY A.; BARBOUR,J. CHARLES; HREN,J.J.; COPELAND,ROBERT GUILD; MINOR,KENNETH G.

    2000-01-18

    Al{sub 2}Cu thin films ({approx} 382 nm) are fabricated by melting and resolidifying Al/Cu bilayers in the presence of a {micro} 3 nm Al{sub 2}O{sub 3} passivating layer. X-ray Photoelectron Spectroscopy (XPS) measures a 1.0 eV shift of the Cu2p{sub 3/2} peak and a 1.6 eV shift of the valence band relative to metallic Cu upon Al{sub 2}Cu formation. Scanning Electron microscopy (SEM) and Electron Back-Scattered Diffraction (EBSD) show that the Al{sub 2}Cu film is composed of 30-70 {micro}m wide and 10-25 mm long cellular grains with (110) orientation. The atomic composition of the film as estimated by Energy Dispersive Spectroscopy (EDS) is 67 {+-} 2% Al and 33 {+-} 2% Cu. XPS scans of Al{sub 2}O{sub 3}/Al{sub 2}Cu taken before and after air exposure indicate that the upper Al{sub 2}Cu layers undergo further oxidation to Al{sub 2}O{sub 3} even in the presence of {approx} 5 nm Al{sub 2}O{sub 3}. The majority of Cu produced from oxidation is believed to migrate below the Al{sub 2}O{sub 3} layers, based upon the lack of evidence for metallic Cu in the XPS scans. In contrast to Al/Cu passivated with Al{sub 2}O{sub 3}, melting/resolidifying the Al/Cu bilayer without Al{sub 2}O{sub 3} results in phase-segregated dendritic film growth.

  14. Nanostructured ceria based thin films ({<=}1 {mu}m) As cathode/electrolyte interfaces

    SciTech Connect (OSTI)

    Hierso, J. [Laboratoire de Chimie de la Matiere Condensee de Paris, Universite Paris 6-UMR 7574-College de France, 11 Place Marcelin Berthelot, 75005 Paris (France); Boy, P.; Valle, K. [CEA-Le Ripault, LSCG, BP 15, 37000 Monts (France); Vulliet, J.; Blein, F. [CEA-Le Ripault, LCCA, BP 15, 37000 Monts (France); Laberty-Robert, Ch., E-mail: christel.laberty@upmc.fr [Laboratoire de Chimie de la Matiere Condensee de Paris, Universite Paris 6-UMR 7574-College de France, 11 Place Marcelin Berthelot, 75005 Paris (France); Sanchez, C. [Laboratoire de Chimie de la Matiere Condensee de Paris, Universite Paris 6-UMR 7574-College de France, 11 Place Marcelin Berthelot, 75005 Paris (France)

    2013-01-15

    Gadolinium doped cerium oxide (CGO: Ce{sub 0,9}Gd{sub 0,1}O{sub 2-{delta}}) films were used as an oxygen anion diffusion layer at the cathode/electrolyte interface of Solid Oxide Fuel Cells (SOFCs), between LSCF (lanthanum strontium cobalt ferrite) and YSZ (yttria-stabilized zirconia). Thin ({approx}100 nm) and thick ({approx}700 nm) mesoporous CGO layers were synthesized through a sol-gel process including organic template coupled with the dip-coating method. Structural and microstructural characterizations were performed, highlighting a well-bonded crystalline CGO nanoparticles network which delineates a 3-D inter-connected mesoporous network. Their electrical behaviors were investigated by impedance spectroscopy analysis of YSZ/mesoporous-CGO/LSCF half-cell. Anode-supported SOFCs, operating at 800 Degree-Sign C, with either dense or mesoporous CGO dip-coated interlayers were also fabricated [NiO-YSZ anode/YSZ/CGO/LSCF cathode]. The impact of the mesoporous CGO interlayers on SOFCs performances was investigated by galvanostatic analysis and compared to the behavior of a dense CGO interlayer. The polarization curves revealed an enhancement in the electrical performance of the cell, which is assigned to a decrease of the polarization resistance at the cathode/electrolyte interface. The integrity and connectivity of the CGO nanoparticles bonded network facilitates O{sup 2-} transport across the interface. - Graphical abstract: Thin and thick CGO films have been prepared through a sol-gel process and their potential application as SOFC cathode/electrolyte interlayer in SOFC has been investigated. Highlights: Black-Right-Pointing-Pointer Mesoporous ceria based thin films exhibit interesting performances for Solid Oxide Fuel Cell. Black-Right-Pointing-Pointer Mesoporous films were synthesized through the sol-gel process combined with the dip-coating. Black-Right-Pointing-Pointer Integrity and connectivity of the nanoparticles facilitates O{sup 2-} transport across the interface.

  15. Synthesis and Characterization of Functional Nanostructured Zinc Oxide Thin Films

    E-Print Network [OSTI]

    Chow, Lee

    .1149/1.2357098, copyright The Electrochemical Society 65 #12;66 reduced environmental impact and a minimum undesirable inter-temperature thin film growth technique has been developed to fabricate a new generation of smart and functional and structural requirements of their applications in gas sensors and solar cells. The rapid photothermal

  16. Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors

    SciTech Connect (OSTI)

    Xu, Rui; He, Jian [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Song, Yang [Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Li, Wei [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Zaslavsky, A. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Paine, D. C., E-mail: David-Paine@brown.edu [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2014-09-01

    We describe an approach to reduce the contact resistance at compositional conducting/semiconducting indium-zinc-oxide (IZO) homojunctions used for contacts in thin film transistors (TFTs). By introducing silver nanoparticles (Ag NPs) at the homojunction interface between the conducting IZO electrodes and the amorphous IZO channel, we reduce the specific contact resistance, obtained by transmission line model measurements, down to ?10{sup ?2?}??cm{sup 2}, ?3 orders of magnitude lower than either NP-free homojunction contacts or solid Ag metal contacts. The resulting back-gated TFTs with Ag NP contacts exhibit good field effect mobility of ?27?cm{sup 2}/V?s and an on/off ratio >10{sup 7}. We attribute the improved contact resistance to electric field concentration by the Ag NPs.

  17. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

    SciTech Connect (OSTI)

    Zhou, Dayu, E-mail: zhoudayu@dlut.edu.cn [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China) [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Xu, Jin [Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian 116023 (China)] [Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian 116023 (China); Li, Qing; Guan, Yan [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China)] [School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Cao, Fei; Dong, Xianlin [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)] [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Müller, Johannes [Fraunhofer IPMS-CNT, Koengisbruecker Strasse 180, 01109 Dresden (Germany)] [Fraunhofer IPMS-CNT, Koengisbruecker Strasse 180, 01109 Dresden (Germany); Schenk, Tony; Schröder, Uwe [Namlab gGmbH/TU Dresden, Noethnitzer Strasse 64, 01187 Dresden (Germany)] [Namlab gGmbH/TU Dresden, Noethnitzer Strasse 64, 01187 Dresden (Germany)

    2013-11-04

    Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO{sub 2} film under bipolar pulsed-field operation. High field cycling causes a “wake-up” in virgin “pinched” polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up.

  18. Nanostructured Thin Film Electrolyte for Thin Film Solid Oxide Fuel Cells 

    E-Print Network [OSTI]

    Cho, Sungmee

    2012-10-19

    Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because they are clean, reliable, and almost entirely pollution-free. SOFCs have flexible fuel selections compared with other fuel cell technologies. The main...

  19. Characterization of the Electronic and Chemical Structure at the Thin Film Solar Cell Interfaces: June 2005 -- June 2009

    SciTech Connect (OSTI)

    Heske, C.

    2009-09-01

    Study using photoelectron spectroscopy, inverse photoemission, and X-ray absorption and emission to derive the electronic structure of interfaces in CIGSS and CdTe thin-film solar cells.

  20. Analytica Chimica Acta 573574 (2006) 913 Metal oxide thin films as sensing layers for ozone detection

    E-Print Network [OSTI]

    2006-01-01

    Analytica Chimica Acta 573­574 (2006) 9­13 Metal oxide thin films as sensing layers for ozone. Their structural, electrical and ozone sensing properties were analyzed. Structural investigations carried out with ultraviolet light and subsequent oxidation in ozone atmosphere at room temperature. © 2006 Elsevier B.V. All

  1. Metal Oxide Thin Films Deposited from Metal Organic Precursors in Supercritical CO2 Solutions

    E-Print Network [OSTI]

    Gougousi, Theodosia

    Metal Oxide Thin Films Deposited from Metal Organic Precursors in Supercritical CO2 Solutions and oxidizing agents are delivered in liquid and supercritical CO2. A cyclic deposition process is presented properties of supercritical CO2 can aid in the delivery of precursors and in the removal of byproducts

  2. Epitaxial thin films

    DOE Patents [OSTI]

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  3. Nitrogen-doped cuprous oxide as a p-type hole-transporting layer in thin-film solar cells

    E-Print Network [OSTI]

    Nitrogen-doped cuprous oxide as a p-type hole- transporting layer in thin-film solar cells Yun Seog-transparent tunnel junction to a back-contact. We fabricate Cu2O-based heterojunction thin-film solar cells-factor and power conversion efficiency of the solar cells. Cu2O:N thin-films may also be useful in other

  4. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    SciTech Connect (OSTI)

    Kumar, B. Rajesh; Rao, T. Subba

    2014-10-15

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup ?4} ? cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  5. PREFERENTIAL OXIDATION OF CARBON MONOXIDE IN A THIN-FILM CATALYTIC MICROREACTOR: ADVANTAGES AND LIMITATIONS

    E-Print Network [OSTI]

    Besser, Ronald S.

    PREFERENTIAL OXIDATION OF CARBON MONOXIDE IN A THIN-FILM CATALYTIC MICROREACTOR: ADVANTAGES stream after hydrocarbon fuel reforming and water-gas-shift reactions. This process, referred to as CO intermediate, which enhances the catalytic activity at temperatures below 200°C. With the same catalyst system

  6. Photo-modulated thin film transistor based on dynamic charge transfer within quantum-dots-InGaZnO interface

    SciTech Connect (OSTI)

    Liu, Xiang; Yang, Xiaoxia; Liu, Mingju; Tao, Zhi; Wei, Lei Li, Chi Zhang, Xiaobing; Wang, Baoping; Dai, Qing; Nathan, Arokia

    2014-03-17

    The temporal development of next-generation photo-induced transistor across semiconductor quantum dots and Zn-related oxide thin film is reported in this paper. Through the dynamic charge transfer in the interface between these two key components, the responsibility of photocurrent can be amplified for scales of times (?10{sup 4}?A/W 450?nm) by the electron injection from excited quantum dots to InGaZnO thin film. And this photo-transistor has a broader waveband (from ultraviolet to visible light) optical sensitivity compared with other Zn-related oxide photoelectric device. Moreover, persistent photoconductivity effect can be diminished in visible waveband which lead to a significant improvement in the device's relaxation time from visible illuminated to dark state due to the ultrafast quenching of quantum dots. With other inherent properties such as integrated circuit compatible, low off-state current and high external quantum efficiency resolution, it has a great potential in the photoelectric device application, such as photodetector, phototransistor, and sensor array.

  7. Naphthacene Based Organic Thin Film Transistor With Rare Earth Oxide

    SciTech Connect (OSTI)

    Konwar, K. [Department of Physics, Digboi College, Digboi-786171, Assam (India); Baishya, B. [Department of Physics, Dibrugarh University, Dibrugarh-786004, Assam (India)

    2010-12-01

    Naphthacene based organic thin film transistors (OTFTs) have been fabricated using La{sub 2}O{sub 3}, as the gate insulator. All the OTFTs have been fabricated by the process of thermal evaporation in vacuum on perfectly cleaned glass substrates with aluminium as source-drain and gate electrodes. The naphthacene film morphology on the glass substrate has been studied by XRD and found to be polycrystalline in nature. The field effect mobility, output resistance, amplification factor, transconductance and gain bandwidth product of the OTFTs have been calculated by using theoretical TFT model. The highest value of field effect mobility is found to be 0.07x10{sup -3} cm{sup 2}V{sup -1}s{sup -1} for the devices annealed in vacuum at 90 deg. C for 5 hours.

  8. Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

    SciTech Connect (OSTI)

    Ge, Jisheng

    1996-01-08

    This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

  9. Spin Coated Plasmonic Nanoparticle Interfaces for Photocurrent Enhancement in Thin Film Si Solar Cells

    E-Print Network [OSTI]

    Israelowitz, Miriam; Cong, Tao; Sureshkumar, Radhakrishna

    2013-01-01

    Nanoparticle (NP) arrays of noble metals strongly absorb light in the visible to infrared wavelengths through resonant interactions between the incident electromagnetic field and the metal's free electron plasma. Such plasmonic interfaces enhance light absorption and photocurrent in solar cells. We report a cost effective and scalable room temperature/pressure spin-coating route to fabricate broadband plasmonic interfaces consisting of silver NPs. The NP interface yields photocurrent enhancement (PE) in thin film silicon devices by up to 200% which is significantly greater than previously reported values. For coatings produced from Ag nanoink containing particles with average diameter of 40 nm, an optimal NP surface coverage of 7% was observed. Scanning electron microscopy of interface morphologies revealed that for low surface coverage, particles are well-separated, resulting in broadband PE. At higher surface coverage, formation of particle strings and clusters caused red-shifting of the PE peak and a narro...

  10. Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals

    SciTech Connect (OSTI)

    Nonaka, Yusuke; Kurosawa, Yoichi; Komatsu, Yoshihiro; Ishihara, Noritaka; Oota, Masashi; Nakashima, Motoki; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei; Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi; Yamauchi, Jun

    2014-04-28

    In–Ga–Zn oxide (IGZO) is a next-generation semiconductor material seen as an alternative to silicon. Despite the importance of the controllability of characteristics and the reliability of devices, defects in IGZO have not been fully understood. We investigated defects in IGZO thin films using electron spin resonance (ESR) spectroscopy. In as-sputtered IGZO thin films, we observed an ESR signal which had a g-value of g?=?2.010, and the signal was found to disappear under thermal treatment. Annealing in a reductive atmosphere, such as N{sub 2} atmosphere, generated an ESR signal with g?=?1.932 in IGZO thin films. The temperature dependence of the latter signal suggests that the signal is induced by delocalized unpaired electrons (i.e., conduction electrons). In fact, a comparison between the conductivity and ESR signal intensity revealed that the signal's intensity is related to the number of conduction electrons in the IGZO thin film. The signal's intensity did not increase with oxygen vacancy alone but also with increases in both oxygen vacancy and hydrogen concentration. In addition, first-principle calculation suggests that the conduction electrons in IGZO may be generated by defects that occur when hydrogen atoms are inserted into oxygen vacancies.

  11. Electrical and optical properties of sputtered amorphous vanadium oxide thin films

    SciTech Connect (OSTI)

    Podraza, N. J. [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Gauntt, B. D. [Materials Characterization Department, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Motyka, M. A.; Horn, M. W. [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Dickey, E. C. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2012-04-01

    Amorphous vanadium oxide (VO{sub x}) is a component found in composite nanocrystalline VO{sub x} thin films. These types of composite films are used as thermistors in pulsed biased uncooled infrared imaging devices when containing face centered cubic vanadium monoxide phase crystallites, and substantial fractions of amorphous material in the composite are necessary to optimize device electrical properties. Similarly, optoelectronic devices exploiting the metal-to-semiconductor transition contain the room-temperature monoclinic or high-temperature (>68 deg. C) rutile vanadium dioxide phase. Thin films of VO{sub x} exhibiting the metal-to-semiconductor transition are typically polycrystalline or nanocrystalline, implying that significant amounts of disordered, amorphous material is present at grain boundaries or surrounding the crystallites and can impact the overall optical or electronic properties of the film. The performance of thin film material for either application depends on both the nature of the crystalline and amorphous components, and in this work we seek to isolate and study amorphous VO{sub x}. VO{sub x} thin films were deposited by pulsed dc reactive magnetron sputtering to produce amorphous materials with oxygen contents {>=}2, which were characterized electrically by temperature dependent current-voltage measurements and optically characterized by spectroscopic ellipsometry. Film resistivity, thermal activation energy, and complex dielectric function spectra from 0.75 to 6.0 eV were used to identify the impact of microstructural variations including composition and density.

  12. An (ultra) high-vacuum compatible sputter source for oxide thin film growth

    SciTech Connect (OSTI)

    Mayr, Lukas; Köpfle, Norbert; Auer, Andrea; Klötzer, Bernhard; Penner, Simon [Institute for Physical Chemistry, University of Innsbruck, Innrain 52a, A-6020 Innsbruck (Austria)] [Institute for Physical Chemistry, University of Innsbruck, Innrain 52a, A-6020 Innsbruck (Austria)

    2013-09-15

    A miniaturised CF-38 mountable sputter source for oxide and metal thin film preparation with enhanced high-vacuum and ultra-high-vacuum compatibility is described. The all home-built sputtering deposition device allows a high flexibility also in oxidic sputter materials, suitable deposition rates for preparation of films in the nm- and the sub-monolayer regime and excellent reliability and enhanced cleanliness for usage in UHV chambers. For a number of technologically important – yet hardly volatile – materials, the described source represents a significant improvement over thermal deposition techniques like electron-beam- or thermal evaporation, as especially the latter are no adequate tool to prepare atomically clean layers of refractory oxide materials. Furthermore, it is superior to commercially available magnetron sputter devices, especially for applications, where highly reproducible sub-monolayer thin film preparation under very clean UHV conditions is required (e.g., for studying phase boundary effects in catalysis). The device in turn offers the usage of a wide selection of evaporation materials and special target preparation procedures also allow the usage of pressed oxide powder targets. To prove the performance of the sputter-source, test preparations with technologically relevant oxide components, comprising ZrO{sub 2} and yttrium-stabilized ZrO{sub 2}, have been carried out. A wide range of characterization methods (electron microscopy, X-ray photoelectron spectroscopy, low-energy ion scattering, atomic force microscopy, and catalytic testing) were applied to demonstrate the properties of the sputter-deposited thin film systems.

  13. Method of synthesizing a plurality of reactants and producing thin films of electro-optically active transition metal oxides

    DOE Patents [OSTI]

    Tracy, C.E.; Benson, D.K.; Ruth, M.R.

    1985-08-16

    A method of synthesizing a plurality of reactants by inducing a reaction by plasma deposition among the reactants. The plasma reaction is effective for consolidating the reactants and producing thin films of electro-optically active transition metal oxides.

  14. Doped tantalum oxide high K dielectric thin films 

    E-Print Network [OSTI]

    Donnelly, Joseph Patrick

    2000-01-01

    , it was doped with varying amounts of titanium oxide, aluminum oxide and silicon dioxide. The composite oxide films were deposited by reactive radio frequency (RF) cc-sputtering of two targets in a variety of oxygen and argon feed gas mixtures. The targets used...

  15. Solid Electrolyte/Electrode Interfaces: Atomistic Behavior Analyzed Via UHV-AFM, Surface Spectroscopies, and Computer Simulations Computational and Experimental Studies of the Cathode/Electrolyte Interface in Oxide Thin Film Batteries

    SciTech Connect (OSTI)

    Garofalini, Stephen H

    2012-03-21

    The goals of the research were to understand the structural, dynamic, and chemical properties of solid electrolyte surfaces and the cathode/electrolyte interface at an atomistic and nanometer level using both computational and experimental techniques.

  16. Light-induced hysteresis and recovery behaviors in photochemically activated solution-processed metal-oxide thin-film transistors

    SciTech Connect (OSTI)

    Jo, Jeong-Wan; Park, Sung Kyu E-mail: skpark@cau.ac.kr; Kim, Yong-Hoon E-mail: skpark@cau.ac.kr

    2014-07-28

    In this report, photo-induced hysteresis, threshold voltage (V{sub T}) shift, and recovery behaviors in photochemically activated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are investigated. It was observed that a white light illumination caused negative V{sub T} shift along with creation of clockwise hysteresis in electrical characteristics which can be attributed to photo-generated doubly ionized oxygen vacancies at the semiconductor/gate dielectric interface. More importantly, the photochemically activated IGZO TFTs showed much reduced overall V{sub T} shift compared to thermally annealed TFTs. Reduced number of donor-like interface states creation under light illumination and more facile neutralization of ionized oxygen vacancies by electron capture under positive gate potential are claimed to be the origin of the less V{sub T} shift in photochemically activated TFTs.

  17. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect (OSTI)

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  18. Fluorine compounds for doping conductive oxide thin films

    DOE Patents [OSTI]

    Gessert, Tim; Li, Xiaonan; Barnes, Teresa M; Torres, Jr., Robert; Wyse, Carrie L

    2013-04-23

    Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

  19. Nanoengineered Thin Films for Solid Oxide Fuel Cells 

    E-Print Network [OSTI]

    Su, Qing

    2013-11-21

    Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because of their high energy efficiency, flexible fuel selections and clean energy conversion. To avoid cell cracking and formation of non-conducting compounds...

  20. Indium oxide thin film as potential photoanodes for corrosion protection of stainless steel under visible light

    SciTech Connect (OSTI)

    Zhang, Yan; Yu, Jianqiang; Sun, Kai; Zhu, Yukun; Bu, Yuyu; Chen, Zhuoyuan

    2014-05-01

    Graphical abstract: If the conduction band potential of In{sub 2}O{sub 3} is more negative than the corrosion potential of stainless steel, photo-induced electrons will be transferred from In{sub 2}O{sub 3} to the steel, thus shifting the potential of the steel into a corrosion immunity region and preventing the steel from the corrosion. - Highlights: • Indium oxide performed novel application under visible light. • Indium oxide by sol–gel method behaved better photoelectrochemical properties. • Electrons were transferred to stainless steel from indium oxide once light on. - Abstract: This paper reports the photoelectrochemical cathodic protection of 304 stainless steel by In{sub 2}O{sub 3} thin-film under visible-light. The films were fabricated with In{sub 2}O{sub 3} powders, synthesized by both sol–gel (In{sub 2}O{sub 3}-sg) and solid-state (In{sub 2}O{sub 3}-ss) processes. The photo-induced open circuit potential and the photo-to-current efficiency measurements suggested that In{sub 2}O{sub 3} could be a promising candidate material for photoelectrochemical cathodic protection of metallic alloys under visible light. Moreover, the polarization curve experimental results indicated that In{sub 2}O{sub 3}-sg thin-film can mitigate the corrosion potential of 304 stainless steel to much more negative values with a higher photocurrent density than the In{sub 2}O{sub 3}-ss film under visible-light illumination. All the results demonstrated that the In{sub 2}O{sub 3}-sg thin-film provides a better photoelectrochemical cathodic protection for 304 stainless steel than In{sub 2}O{sub 3}-ss thin-film under visible-light illumination. The higher photoelectrochemical efficiency is possibly due to the uniform thin films produced with the smaller particle size of In{sub 2}O{sub 3}-sg, which facilitates the transfer of the photo-induced electrons from bulk to the surface and suppresses the charge recombination of the electrons and holes.

  1. Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications

    E-Print Network [OSTI]

    ,12 binary tran- sition metal oxides (such as NiO,13-15 TiO2,16-18 and ZnO19 ), and even Fe3O4 nanoparticle assemblies.20 Fullerenes, carbon nanotubes, and graphene-based ma- terials have attracted attention as future nonvolatile memory elements.21 Suspended and crossed carbon nanotubes in an array configuration yielded

  2. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    E-Print Network [OSTI]

    Zhu, Yuankun

    2014-01-01

    7. Optical bandgap of the doped CdO thin films as a functionelectrical properties of In-doped CdO thin films fabricatedand transparent Ti-doped CdO films by pulsed laser

  3. Reliable wet-chemical cleaning of natively oxidized high-efficiency Cu(In,Ga)Se{sub 2} thin-film solar cell absorbers

    SciTech Connect (OSTI)

    Lehmann, Jascha; Lehmann, Sebastian; Lauermann, Iver; Rissom, Thorsten; Kaufmann, Christian A.; Lux-Steiner, Martha Ch.; Bär, Marcus; Sadewasser, Sascha

    2014-12-21

    Currently, Cu-containing chalcopyrite-based solar cells provide the highest conversion efficiencies among all thin-film photovoltaic (PV) technologies. They have reached efficiency values above 20%, the same performance level as multi-crystalline silicon-wafer technology that dominates the commercial PV market. Chalcopyrite thin-film heterostructures consist of a layer stack with a variety of interfaces between different materials. It is the chalcopyrite/buffer region (forming the p-n junction), which is of crucial importance and therefore frequently investigated using surface and interface science tools, such as photoelectron spectroscopy and scanning probe microscopy. To ensure comparability and validity of the results, a general preparation guide for “realistic” surfaces of polycrystalline chalcopyrite thin films is highly desirable. We present results on wet-chemical cleaning procedures of polycrystalline Cu(In{sub 1-x}Ga{sub x})Se{sub 2} thin films with an average x?=?[Ga]/([In]?+?[Ga])?=?0.29, which were exposed to ambient conditions for different times. The hence natively oxidized sample surfaces were etched in KCN- or NH{sub 3}-based aqueous solutions. By x-ray photoelectron spectroscopy, we find that the KCN treatment results in a chemical surface structure which is – apart from a slight change in surface composition – identical to a pristine as-received sample surface. Additionally, we discover a different oxidation behavior of In and Ga, in agreement with thermodynamic reference data, and we find indications for the segregation and removal of copper selenide surface phases from the polycrystalline material.

  4. Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

    SciTech Connect (OSTI)

    Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Sze, Simon M. [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China)

    2014-04-14

    In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

  5. Effect of silver incorporation in phase formation and band gap tuning of tungsten oxide thin films

    SciTech Connect (OSTI)

    Jolly Bose, R.; Kumar, R. Vinod; Sudheer, S. K.; Mahadevan Pillai, V. P. [Department of Optoelectronics, University of Kerala, Kariyavattom, Thiruvananthapuram, Kerala 695581 (India); Reddy, V. R.; Ganesan, V. [UGC - DAE Consortium for Scientific Research, Khandwa Road, Indore 452017, Madhyapradesh (India)

    2012-12-01

    Silver incorporated tungsten oxide thin films are prepared by RF magnetron sputtering technique. The effect of silver incorporation in micro structure evolution, phase enhancement, band gap tuning and other optical properties are investigated using techniques such as x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, and UV-Visible spectroscopy. Effect of silver addition in phase formation and band gap tuning of tungsten oxide thin films are investigated. It is found that the texturing and phase formation improves with enhancement in silver content. It is also found that as the silver incorporation enhances the thickness of the films increases at the same time the strain in the film decreases. Even without annealing the desired phase can be achieved by doping with silver. A broad band centered at the wavelength 437 nm is observed in the absorption spectra of tungsten oxide films of higher silver incorporation and this can be attributed to surface plasmon resonance of silver atoms present in the tungsten oxide matrix. The transmittance of the films is decreased with increase in silver content which can be due to increase in film thickness, enhancement of scattering, and absorption of light caused by the increase of grain size, surface roughness and porosity of films and enhanced absorption due to surface plasmon resonance of silver. It is found that silver can act as the seed for the growth of tungsten oxide grains and found that the grain size increases with silver content which in turn decreases the band gap of tungsten oxide from 3.14 eV to 2.70 eV.

  6. Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface

    SciTech Connect (OSTI)

    Bar, M.; Wimmer, M.; Wilks, R. G.; Roczen, M.; Gerlach, D.; Ruske, F.; Lips, K.; Rech, B.; Weinhardt, L.; Blum, M.; Pookpanratana, S.; Krause, S.; Zhang, Y.; Heske, C.; Yang, W.; Denlinger, J. D.

    2010-04-30

    The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5+2)nm after SPC could be estimated.

  7. Heteroepitaxial growth of highly conductive metal oxide RuO{sub 2} thin films by pulsed laser deposition

    SciTech Connect (OSTI)

    Jia, Q.X.; Wu, X.D.; Foltyn, S.R.; Findikoglu, A.T.; Tiwari, P.; Zheng, J.P.; Jow, T.R.

    1995-09-18

    Highly conductive ruthenium oxide (RuO{sub 2}) has been epitaxially grown on LaAlO{sub 3} substrates by pulsed laser deposition. The RuO{sub 2} film is ({ital h}00) oriented normal to the substrate surface. The heteroepitaxial growth of RuO{sub 2} on LaAlO{sub 3} is demonstrated by the strong in-plane orientation of thin films with respect to the major axes of the substrate. High crystallinity of RuO{sub 2} thin films is also determined from Rutherford backscattering channeling measurements. Electrical measurements on the RuO{sub 2} thin films demonstrate a quite low room-temperature resistivity of 35{plus_minus}2 {mu}{Omega} cm at deposition temperatures of above 500 {degree}C. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  8. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  9. Microstructure of cosputter-deposited metal-and oxide-MoS2 solid lubricant thin films

    E-Print Network [OSTI]

    Marks, Laurence D.

    Microstructure of cosputter-deposited metal- and oxide-MoS2 solid lubricant thin films M. R of cosputtering small amounts of Ni (3%, 9%) and SbOx (20%) on the final microstructure of MoS2 lubricant thin performance is discussed. I. INTRODUCTION Sputter-deposited films of MoS2 have been used as solid lubricants

  10. Cathodoluminescence Study of GadoliniumDoped Yttrium Oxide Thin Films Deposited By RadioFrequency Magnetron Sputtering

    E-Print Network [OSTI]

    Fitz-Gerald, James M.

    Cathodoluminescence Study of Gadolinium­Doped Yttrium Oxide Thin Films Deposited By Radio­Frequency (001) substrate using radio­frequency magnetron sputtering. Alternating layers of Y2O3 and Gd wereA/cm2 . Non- radiative decay via thermal pathways is suspected for the observed activator saturation

  11. Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

    SciTech Connect (OSTI)

    Subramanyam, Guru, E-mail: gsubramanyam1@udayton.edu [Department of Electrical and Computer Engineering, University of Dayton, Dayton, Ohio 45469 (United States); Cole, M. W., E-mail: melanie.w.cole.civ@mail.mil [U.S. Army Research Laboratory, Weapons and Materials Research Directorate, Aberdeen Proving Ground, Maryland 21005 (United States); Sun, Nian X. [Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States); Kalkur, Thottam S. [Department of Electrical and Computer Engineering, University of Colorado, Colorado Springs, Colorado 80918 (United States); Sbrockey, Nick M.; Tompa, Gary S. [Structured Materials Industries, Inc., Piscataway, New Jersey 08854 (United States); Guo, Xiaomei [Boston Applied Technologies, Inc., Woburn, Massachusetts 01801 (United States); Chen, Chonglin [Department of Physics and Astronomy, University of Texas, San Antonio, Texas 78249 (United States); Alpay, S. P.; Rossetti, G. A. [Institute of Materials Science and Materials Science and Engineering Program, University of Connecticut, Storrs, Connecticut 06269 (United States); Dayal, Kaushik [Mechanics, Materials and Computing, Civil and Environmental Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Chen, Long-Qing [Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802 (United States); Schlom, Darrell G. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States); Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States)

    2013-11-21

    There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.

  12. Fatigue failure in thin-film polysilicon is due to subcriticalcracking within the oxide layer

    SciTech Connect (OSTI)

    Alsem, D.H.; Muhlstein, C.L.; Stach, E.A.; Ritchie, R.O.

    2005-01-11

    It has been established that microelectromechanical systems (MEMS) created from polycrystalline silicon thin-films are subject to cyclic fatigue. Prior work by the authors has suggested that although bulk silicon is not susceptible to fatigue failure in ambient air, fatigue in micron-scale silicon is a result of a ''reaction-layer'' process, whereby high stresses induce a thickening of the post-release oxide at stress concentrations such as notches, which subsequently undergoes moisture-assisted cracking. However, there exists some controversy regarding the post-release oxide thickness of the samples used in the prior study. In this Letter, we present data from devices from a more recent fabrication run that confirm our prior observations. Additionally, new data from tests in high vacuum show that these devices do not fatigue when oxidation and moisture are suppressed. Each of these observations lends credence to the '''reaction-layer'' mechanism. Recent advances in the design of microelectromechanical systems (MEMS) have increased the demand for more reliable microscale structures. Although silicon is an effective and widely used structural material at the microscale, it is very brittle. Consequently, reliability is a limiting factor for commercial and defense applications. Since the surface to volume ratio of these structural films is very large, classical models for failure modes in bulk materials cannot always be applied. For example, whereas bulk silicon is immune to cyclic fatigue failure thin micron-scale structural films of silicon appear to be highly susceptible. It is clear that at these size scales, surface effects may become dominant in controlling mechanical properties. The main reliability issues for MEMS are stiction, fatigue and wear. Fatigue is important in cases where devices are subjected to a large number of loading cycles with amplitudes below their (single-cycle) fracture stress, which may arise due to vibrations intentionally induced in the structure (i.e. a resonator) or those which arise from the service environment. While the reliability of MEMS has received extensive attention, the physical mechanisms responsible for these failure modes have yet to be conclusively determined. This is particularly true for fatigue, where the mechanisms have been subject to intense debate. Recently we have proposed that the fatigue of micron-scale polysilicon is associated with stress-induced surface oxide thickening and moisture-assisted subcritical cracking in the amorphous SiO{sub 2} oxide layer (''reaction-layer'' fatigue). The mechanism of oxide thickening is as yet unknown, but is likely related to some form of stress-assisted diffusion. Allameh et al. suggest a complementary mechanism involving stress-assisted oxide thickening, caused by dissolution of the surface oxide which forms deep grooves that are sites for crack initiation. Kahn et al. have criticized these mechanisms and proposed that, instead, fatigue is caused by subcritical cracking due to contacting surface asperities in the compressive part of the cycle. To the authors' knowledge, there is no direct experimental observation of such asperity contact. Also, their model cannot explain why micron-scale silicon, and not bulk silicon, is susceptible to fatigue. Moreover, Kahn et al. do not acknowledge the role of stress-induced oxide thickening, which has been observed directly using TEM and indirectly using atomic-force microscope measurements by several investigators, and have questioned whether the materials utilized by Muhlstein et al. and Allameh et al. were representative due to the relatively thick oxide scales. Accordingly, the goal of the present research is to seek a definitive understanding of the physical mechanisms responsible for fatigue in polysilicon structural thin-films. Our approach is to combine on-chip testing methods with electron microscopy by fatiguing thin-film samples and observing them, in an unthinned condition, using high-voltage transmission electron microscopy (HVTEM). Two principal results are found from this work: (1

  13. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    SciTech Connect (OSTI)

    Tripathy, Sumanta K.; Rajeswari, V. P. [Centre for Nano Science and Technology, GVP College of Engineering (Autonomous), Visakhapatnam- 530048 (India)

    2014-01-28

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  14. Misfit strain driven cation inter-diffusion across an epitaxial multiferroic thin film interface

    SciTech Connect (OSTI)

    Sankara Rama Krishnan, P. S.; Munroe, Paul; Nagarajan, V.; Morozovska, Anna N.; Eliseev, Eugene A.; Ramasse, Quentin M.; Kepaptsoglou, Demie; Liang, Wen-I.; Chu, Ying-Hao

    2014-02-07

    Cation intermixing at functional oxide interfaces remains a highly controversial area directly relevant to interface-driven nanoelectronic device properties. Here, we systematically explore the cation intermixing in epitaxial (001) oriented multiferroic bismuth ferrite (BFO) grown on a (001) lanthanum aluminate (LAO) substrate. Aberration corrected dedicated scanning transmission electron microscopy and electron energy loss spectroscopy reveal that the interface is not chemically sharp, but with an intermixing of ?2?nm. The driving force for this process is identified as misfit-driven elastic strain. Landau-Ginzburg-Devonshire-based phenomenological theory was combined with the Sheldon and Shenoy formula in order to understand the influence of boundary conditions and depolarizing fields arising from misfit strain between the LAO substrate and BFO film. The theory predicts the presence of a strong potential gradient at the interface, which decays on moving into the bulk of the film. This potential gradient is significant enough to drive the cation migration across the interface, thereby mitigating the misfit strain. Our results offer new insights on how chemical roughening at oxide interfaces can be effective in stabilizing the structural integrity of the interface without the need for misfit dislocations. These findings offer a general formalism for understanding cation intermixing at highly strained oxide interfaces that are used in nanoelectronic devices.

  15. Polarity compensation in ultra-thin films of complex oxides: The case of a perovskite nickelate

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Middey, S.; Rivero, P.; Meyers, D.; Kareev, M.; Liu, X.; Cao, Y.; Freeland, J. W.; Barraza-Lopez, S.; Chakhalian, J.

    2014-10-29

    We address the fundamental issue of growth of perovskite ultra-thin films under the condition of a strong polar mismatch at the heterointerface exemplified by the growth of a correlated metal LaNiO3 on the band insulator SrTiO3 along the pseudo cubic [111] direction. While in general the metallic LaNiO3 film can effectively screen this polarity mismatch, we establish that in the ultra-thin limit, films are insulating in nature and require additional chemical and structural reconstruction to compensate for such mismatch. A combination of in-situ reflection high-energy electron diffraction recorded during the growth, X-ray diffraction, and synchrotron based resonant X-ray spectroscopy revealmore »the formation of a chemical phase La2Ni2O5 (Ni2+) for a few unit-cell thick films. First-principles layer-resolved calculations of the potential energy across the nominal LaNiO3/SrTiO3 interface confirm that the oxygen vacancies can efficiently reduce the electric field at the interface.« less

  16. Polarity compensation in ultra-thin films of complex oxides: The case of a perovskite nickelate

    SciTech Connect (OSTI)

    Middey, S.; Rivero, P.; Meyers, D.; Kareev, M.; Liu, X.; Cao, Y.; Freeland, J. W.; Barraza-Lopez, S.; Chakhalian, J.

    2014-10-29

    We address the fundamental issue of growth of perovskite ultra-thin films under the condition of a strong polar mismatch at the heterointerface exemplified by the growth of a correlated metal LaNiO3 on the band insulator SrTiO3 along the pseudo cubic [111] direction. While in general the metallic LaNiO3 film can effectively screen this polarity mismatch, we establish that in the ultra-thin limit, films are insulating in nature and require additional chemical and structural reconstruction to compensate for such mismatch. A combination of in-situ reflection high-energy electron diffraction recorded during the growth, X-ray diffraction, and synchrotron based resonant X-ray spectroscopy reveal the formation of a chemical phase La2Ni2O5 (Ni2+) for a few unit-cell thick films. First-principles layer-resolved calculations of the potential energy across the nominal LaNiO3/SrTiO3 interface confirm that the oxygen vacancies can efficiently reduce the electric field at the interface.

  17. Thin film ion conducting coating

    DOE Patents [OSTI]

    Goldner, Ronald B. (Lexington, MA); Haas, Terry (Sudbury, MA); Wong, Kwok-Keung (Watertown, MA); Seward, George (Arlington, MA)

    1989-01-01

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  18. Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer 

    E-Print Network [OSTI]

    Lu, Tianlin

    2012-07-16

    Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric ...

  19. Mechanisms of Zinc Oxide Nanocrystalline Thin Film Formation by Thermal Degradation of Metal-Loaded Hydrogels

    E-Print Network [OSTI]

    electrode in flat- panel displays,1 solar cells, and thin-film transistors.2,3 Other recent reports account as a short-range probe to investigate the first stages of nucleation and the following development of Zn

  20. Anti-reflection zinc oxide nanocones for higher efficiency thin-film silicon solar cells

    E-Print Network [OSTI]

    Mailoa, Jonathan P

    2012-01-01

    Thin film silicon solar cells, which are commonly made from microcrystalline silicon ([mu]c-Si) or amorphous silicon (a-Si), have been considered inexpensive alternatives to thick polycrystalline silicon (polysilicon) solar ...

  1. Thin-film growth of the charge-density-wave oxide Rb0.30MoO3 H. S. J. van der Zant,a)

    E-Print Network [OSTI]

    Thin-film growth of the charge-density-wave oxide Rb0.30MoO3 H. S. J. van der Zant,a) O. C. Mantel 29 April 1996 We report on the thin-film fabrication of a charge-density wave CDW compound. Single-phase epitaxial films of the model CDW oxide Rb0.30MoO3 have been grown by pulsed-laser deposition. Detailed

  2. Structural, Morphological and Optical properties of Sputtered Nickel oxide Thin Films

    SciTech Connect (OSTI)

    Reddy, A. Mallikarjuna; Reddy, A. Sivasankar; Reddy, P. Sreedhara [Department of Physics, Sri Venkateswara University, Tirupati-517 502 (India)

    2011-10-20

    Nickel oxide (NiO) thin films have been deposited by dc reactive magnetron sputtering technique on glass substrates at various substrate temperatures in the range of 303 to 723 K. The influence of substrate temperature on structural, morphological, compositional and optical properties was analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive spectroscopy (EDS) and spectrophotometer studies. The structural properties of the films were strongly influenced by the substrate temperature. From the microstructural studies, fine and uniform grains were grown with RMS roughness of 9.4 nm at substrate temperature of 523 K. The optical results indicated that the optical transmittance of the films increases with increasing substrate temperature up to 523 K, thereafter decreases. The optical band of the films increases with substrate temperature initially, thereafter decreased at higher temperatures. The Highest optical transmittance of 60 % and optical band gap of 3.82 eV was observed in the present study.

  3. Growth and oxidation of thin film Al{sub 2}Cu

    SciTech Connect (OSTI)

    Son, K.A.; Missert, N.A.; Barbour, J.C.; Hren, J.J.; Copeland, R.G.; Minor, K.G.

    1999-11-09

    Al{sub 2}Cu thin films ({approximately}382 nm) are fabricated by melting and resolidifying Al/Cu bilayers in the presence of a {approximately}3 nm Al{sub 2}O{sub 3} passivating layer. X-ray Photoelectron Spectroscopy (XPS) measures a 1.0 eV shift of the Cu2p{sub 3/2} peak and a 1.6 eV shift of the valence band relative to metallic Cu upon Al{sub 2}Cu formation. Scanning Electron Microscopy (SEM) and Electron Back-Scattered Diffraction (EBSD) show that the Al{sub 2}Cu film is composed of 30--70 {mu}m wide and 10--25 mm long cellular grains with (110) orientation. The atomic composition of the film as estimated by Energy Dispersive Spectroscopy (EDS) is 67{+-}2% Al and 33{+-}2% Cu. XPS scans of Al{sub 2}O{sub 3}/Al{sub 2}Cu taken before and after air exposure indicate that the upper Al{sub 2}Cu layers undergo further oxidation to Al{sub 2}O{sub 3} even in the presence of {approximately}5 nm Al{sub 2}O{sub 3}. The majority of Cu produced from oxidation is believed to migrate below the Al{sub 2}O{sub 3} layers, based upon the lack of evidence for metallic Cu in the XPS scans. In contrast to Al/Cu passivated with Al{sub 2}O{sub 3}, melting/resolidifying the Al/Cu bilayer without Al{sub 2}O{sub 3} results in phase-segregated dendritic film growth.

  4. Plasmonic Based Sensing Using an Array of Au-Metal Oxide Thin Films

    SciTech Connect (OSTI)

    Joy, N.; Rogers, Phillip H.; Nandasiri, Manjula I.; Thevuthasan, Suntharampillai; Carpenter, Michael A.

    2012-12-04

    An optical plasmonic-based sensing array has been developed and tested for the selective and sensitive detection of H2, CO, and NO2 at a temperature of 500°C in an oxygen-containing background. The three element sensing array used Au nanoparticles embedded in separate thin films of yttria stabilized zirconia (YSZ), CeO2, and TiO2. A peak in the absorbance spectrum due to a localized surface plasmon resonance (LSPR) on the Au nanoparticles was monitored for each film during gas exposures and showed a blue shift in the peak positions for the reducing gases, H2 and CO, and a red shift for the oxidizing gas NO2. A more in-depth look at the sensing response was performed using the multivariate methods of principal component analysis (PCA) analysis and linear discriminant analysis (LDA) on data from across the entire absorbance spectrum range. Qualitative results from both methods showed good separation between the three analytes for both the full array and the Au-TiO2 sample. Quantification of LDA cluster separation using the Mahalanobis distance showed better cluster separation for the array, but there were some instances with the lowest concentrations where the single Au-TiO2 film had better separation than the array. A second method to quantify cluster separation in LDA space was developed using multidimensional volume analysis of the individual cluster volume, overlapped cluster volume and empty volume between clusters. Compared to the individual sensing elements, the array showed less cluster overlap, smaller cluster volumes, and more space between clusters, all of which were expected for improved separability between the analytes.

  5. How Voltage Drops are Manifested by Lithium Ion Configurations at Interfaces and in Thin Films on Battery Electrodes

    E-Print Network [OSTI]

    Leung, Kevin

    2015-01-01

    Battery electrode surfaces are generally coated with electronically insulating solid films of thickness 1-50 nm. Both electrons and Li+ can move at the electrode-surface film interface in response to the voltage, which adds complexity to the "electric double layer" (EDL). We apply Density Functional Theory (DFT) to investigate how the applied voltage is manifested as changes in the EDL at atomic lengthscales, including charge separation and interfacial dipole moments. Illustrating examples include Li(3)PO(4), Li(2)CO(3), and Li(x)Mn(2)O(4) thin-films on Au(111) surfaces under ultrahigh vacuum conditions. Adsorbed organic solvent molecules can strongly reduce voltages predicted in vacuum. We propose that manipulating surface dipoles, seldom discussed in battery studies, may be a viable strategy to improve electrode passivation. We also distinguish the computed potential governing electrons, which is the actual or instantaneous voltage, and the "lithium cohesive energy" based voltage governing Li content widely...

  6. PROJECT PROFILE: High-resolution Investigations of Transport Limiting Defects and Interfaces in Thin-Film Photovoltaic Devices

    Broader source: Energy.gov [DOE]

    This project will develop the capability of high-resolution transport imaging in photovoltaic (PV) devices, which is useful for improving polycrystalline thin-film PV materials.

  7. Seeking to quantify the ferromagnetic-to-antiferromagnetic interface coupling resulting in exchange bias with various thin-film conformations

    SciTech Connect (OSTI)

    Hsiao, C. H.; Wang, S.; Ouyang, H., E-mail: houyang@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Desautels, R. D.; Lierop, J. van, E-mail: Johan.van.Lierop@umanitoba.ca [Department of Physics and Astronomy, University of Manitoba, Winnipeg, MB R3T 2N2 (Canada); Lin, K. W. [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan (China)

    2014-08-07

    Ni{sub 3}Fe/(Ni, Fe)O thin films with bilayer and nanocrystallite dispersion morphologies are prepared with a dual ion beam deposition technique permitting precise control of nanocrystallite growth, composition, and admixtures. A bilayer morphology provides a Ni{sub 3}Fe-to-NiO interface, while the dispersion films have different mixtures of Ni{sub 3}Fe, NiO, and FeO nanocrystallites. Using detailed analyses of high resolution transmission electron microscopy images with Multislice simulations, the nanocrystallites' structures and phases are determined, and the intermixing between the Ni{sub 3}Fe, NiO, and FeO interfaces is quantified. From field-cooled hysteresis loops, the exchange bias loop shift from spin interactions at the interfaces are determined. With similar interfacial molar ratios of FM-to-AF, we find the exchange bias field essentially unchanged. However, when the interfacial ratio of FM to AF was FM rich, the exchange bias field increases. Since the FM/AF interface ‘contact’ areas in the nanocrystallite dispersion films are larger than that of the bilayer film, and the nanocrystallite dispersions exhibit larger FM-to-AF interfacial contributions to the magnetism, we attribute the changes in the exchange bias to be from increases in the interfacial segments that suffer defects (such as vacancies and bond distortions), that also affects the coercive fields.

  8. Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique

    SciTech Connect (OSTI)

    Keshavarzi, Reza [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Mirkhani, Valiollah, E-mail: mirkhani@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Moghadam, Majid, E-mail: moghadamm@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of) [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Department of Nanotechnology Engineering, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Tangestaninejad, Shahram; Mohammadpoor-Baltork, Iraj [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Fallah, Hamid Reza; Dastjerdi, Mohammad Javad Vahid; Modayemzadeh, Hamed Reza [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)

    2011-04-15

    In this work, the preparation of In{sub 2}O{sub 3}-ZnO thin films by electron beam evaporation technique on glass substrates is reported. Optical and electrical properties of these films were investigated. The effect of dopant amount and annealing temperature on the optical and electrical properties of In{sub 2}O{sub 3}-ZnO thin films was also studied. Different amount of ZnO was used as dopant and the films were annealed at different temperature. The results showed that the most crystalline, transparent and uniform films with lowest resistivity were obtained using 25 wt% of ZnO annealed at 500 {sup o}C.

  9. Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Jeffrey W. Elam,*, David A. Baker, Alex B. F. Martinson,, Michael J. Pellin, and

    E-Print Network [OSTI]

    Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Precursors Jeffrey W: NoVember 8, 2007 This article describes a new atomic layer deposition (ALD) method for preparing,2 sol-gel methods,3 chemical vapor deposition,4 pulsed laser deposition,5 and atomic layer

  10. Apparatus and method for characterizing thin film and interfaces using an optical heat generator and detector

    DOE Patents [OSTI]

    Maris, H.J.; Stoner, R.J.

    1998-05-05

    An optical heat generation and detection system generates a first non-destructive pulsed beam of electromagnetic radiation that is directed upon a sample containing at least one interface between similar or dissimilar materials. The first pulsed beam of electromagnetic radiation, a pump beam, produces a non-uniform temperature change within the sample. A second non-destructive pulsed beam of electromagnetic radiation, a probe beam, is also directed upon the sample. Physical and chemical properties of the materials, and of the interface, are measured by observing changes in a transient optical response of the sample to the probe beam, as revealed by a time dependence of changes in, by example, beam intensity, direction, or state of polarization. The system has increased sensitivity to interfacial properties including defects, contaminants, chemical reactions and delaminations, as compared to conventional non-destructive, non-contact techniques. One feature of this invention is a determination of a Kapitza resistance at the interface, and the correlation of the determined Kapitza resistance with a characteristic of the interface, such as roughness, delamination, the presence of contaminants, etc. 31 figs.

  11. Apparatus and method for characterizing thin film and interfaces using an optical heat generator and detector

    DOE Patents [OSTI]

    Maris, Humphrey J (Barrington, RI); Stoner, Robert J (Duxbury, MA)

    1998-01-01

    An optical heat generation and detection system generates a first non-destructive pulsed beam of electromagnetic radiation that is directed upon a sample containing at least one interface between similar or dissimilar materials. The first pulsed beam of electromagnetic radiation, a pump beam (21a), produces a non-uniform temperature change within the sample. A second non-destructive pulsed beam of electromagnetic radiation, a probe beam (21b), is also directed upon the sample. Physical and chemical properties of the materials, and of the interface, are measured by observing changes in a transient optical response of the sample to the probe beam, as revealed by a time dependence of changes in, by example, beam intensity, direction, or state of polarization. The system has increased sensitivity to interfacial properties including defects, contaminants, chemical reactions and delaminations, as compared to conventional non-destructive, non-contact techniques. One feature of this invention is a determination of a Kapitza resistance at the interface, and the correlation of the determined Kapitza resistance with a characteristic of the interface, such as roughness, delamination, the presence of contaminants, etc.

  12. Top-gate zinc tin oxide thin-film transistors with high bias and environmental stress stability

    SciTech Connect (OSTI)

    Fakhri, M.; Theisen, M.; Behrendt, A.; Görrn, P.; Riedl, T. [Institute of Electronic Devices, University of Wuppertal, Wuppertal 42119 (Germany)

    2014-06-23

    Top gated metal-oxide thin-film transistors (TFTs) provide two benefits compared to their conventional bottom-gate counterparts: (i) The gate dielectric may concomitantly serve as encapsulation layer for the TFT channel. (ii) Damage of the dielectric due to high-energetic particles during channel deposition can be avoided. In our work, the top-gate dielectric is prepared by ozone based atomic layer deposition at low temperatures. For ultra-low gas permeation rates, we introduce nano-laminates of Al{sub 2}O{sub 3}/ZrO{sub 2} as dielectrics. The resulting TFTs show a superior environmental stability even at elevated temperatures. Their outstanding stability vs. bias stress is benchmarked against bottom-gate devices with encapsulation.

  13. Enhanced stability against bias-stress of metal-oxide thin film transistors deposited at elevated temperatures

    SciTech Connect (OSTI)

    Fakhri, M.; Goerrn, P.; Riedl, T. [Institute of Electronic Devices, University of Wuppertal, Rainer-Gruenter-St. 21, 42119 Wuppertal (Germany); Weimann, T.; Hinze, P. [Physikalisch-Technische Bundesanstalt Braunschweig, Bundesallee 100, 38116 Braunschweig (Germany)

    2011-09-19

    Transparent zinc-tin-oxide (ZTO) thin film transistors (TFTs) have been prepared by DC magnetron sputtering. Compared to reference devices with a channel deposited at room temperature and subsequently annealing at 400 deg. C, a substantially enhanced stability against bias stress is evidenced for devices with in-situ substrate heating during deposition (400 deg. C). A reduced density of sub-gap defect states in TFT channels prepared with in-situ substrate heating is found. Concomitantly, a reduced sensitivity to the adsorption of ambient gases is evidenced for the in-situ heated devices. This finding is of particular importance for an application as driver electronics for organic light emitting diode displays.

  14. Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xiao, Zhigang; Kisslinger, Kim

    2015-06-17

    Thin films of hafnium dioxide (HfO2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ring oscillator to test themore »quality of the HfO2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO2 thin film functioned very well as the gate oxide.« less

  15. Thin film photovoltaic device

    DOE Patents [OSTI]

    Catalano, A.W.; Bhushan, M.

    1982-08-03

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  16. Thin film photovoltaic device

    DOE Patents [OSTI]

    Catalano, Anthony W. (Wilmington, DE); Bhushan, Manjul (Wilmington, DE)

    1982-01-01

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  17. Rapid low-temperature processing of metal-oxide thin film transistors with combined far ultraviolet and thermal annealing

    SciTech Connect (OSTI)

    Leppäniemi, J. Ojanperä, K.; Kololuoma, T.; Huttunen, O.-H.; Majumdar, H.; Alastalo, A.; Dahl, J.; Tuominen, M.; Laukkanen, P.

    2014-09-15

    We propose a combined far ultraviolet (FUV) and thermal annealing method of metal-nitrate-based precursor solutions that allows efficient conversion of the precursor to metal-oxide semiconductor (indium zinc oxide, IZO, and indium oxide, In{sub 2}O{sub 3}) both at low-temperature and in short processing time. The combined annealing method enables a reduction of more than 100?°C in annealing temperature when compared to thermally annealed reference thin-film transistor (TFT) devices of similar performance. Amorphous IZO films annealed at 250?°C with FUV for 5?min yield enhancement-mode TFTs with saturation mobility of ?1?cm{sup 2}/(V·s). Amorphous In{sub 2}O{sub 3} films annealed for 15?min with FUV at temperatures of 180?°C and 200?°C yield TFTs with low-hysteresis and saturation mobility of 3.2?cm{sup 2}/(V·s) and 7.5?cm{sup 2}/(V·s), respectively. The precursor condensation process is clarified with x-ray photoelectron spectroscopy measurements. Introducing the FUV irradiation at 160?nm expedites the condensation process via in situ hydroxyl radical generation that results in the rapid formation of a continuous metal-oxygen-metal structure in the film. The results of this paper are relevant in order to upscale printed electronics fabrication to production-scale roll-to-roll environments.

  18. Fatigue failure in thin-film polysilicon is due to subcritical cracking within the oxide layer

    E-Print Network [OSTI]

    Alsem, D.H.; Muhlstein, C.L.; Stach, E.A.; Ritchie, R.O.

    2005-01-01

    and manual fracture: no oxide layer thickening (principalCRACKING WITHIN THE OXIDE LAYER D. H. Alsem, a),b),c) E. A.air with thickened oxide layer around the notch root (

  19. A low temperature amorphous oxide thin film transistor (TFT) backplane technology for flexible organic light emitting diode (OLED) displays has been developed to create 4.1-in. diagonal backplanes. The critical steps in

    E-Print Network [OSTI]

    organic light emitting diode (OLED) displays has been developed to create 4.1-in. diagonal backplanes organic light emitting diode (OLED) displays. Mixed oxide semiconductor thin film transistors (TFT

  20. Electrocatalytic Measurement Methodology of Oxide Catalysts Using a Thin-Film Rotating Disk Electrode

    E-Print Network [OSTI]

    Suntivich, Jin

    Transition-metal oxides can exhibit high electrocatalytic activity for reactions such as the oxygen reduction reaction (ORR) in alkaline media. It is often difficult to measure and compare the activities of oxide catalysts ...

  1. Transparent and Conductive Carbon Nanotube Multilayer Thin Films Suitable as an Indium Tin Oxide Replacement 

    E-Print Network [OSTI]

    Park, Yong Tae

    2012-07-16

    of several methods for carbon nanotube film fabrication: (a) vacuum filtration, (b) air-spraying, (c) transfer printing, and (d) rod coating (reproduced from [91], [92], [37], and [42], respectively). .................................... 16 2.8 (a...) Graphene oxide structure. (b) Deposition of graphene oxide sheet by dip coating and an SEM image of deposited graphene oxide pieces (reproduced from [172]). (c) Photo reduction lithography approach for fabrication of patterns on (PDDA/Graphene Oxide...

  2. Effect of Sputtering Gas environments on the Properties of Aluminum-doped Zinc Oxide Thin Films for Photovoltaic Application

    SciTech Connect (OSTI)

    Chauhan, Ram Narayan; Kumar, Jitendra [Materials Science Programme, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Singh, C.; Anand, R. S. [Electrical Engineering Department, Indian Institute of Technology Kanpur, Kanpur-208016 (India)

    2011-10-20

    Aluminum-doped zinc oxide thin films have been deposited on glass substrates by R.F. sputtering using ZnO(98%)-Al{sub 2}O{sub 3}(2%) target in different sputtering gaseous environments, viz., Ar, Ar/O{sub 2} and Ar/N{sub 2}+H{sub 2} at 80 deg. C. These films have been studied with regard to phase, microstructure, optical absorption and sheet resistance for application in photovoltaic devices as transparent conducting electrodes. The properties of the films are shown to strongly depend on the sputtering gas(es). The films exhibit a wurtzite-type hexagonal structure with the (00.2) preferred orientation, the c-axis perpendicular to the substrate. The intensity of 00.2 diffraction peak and the average crystallite size remain almost the same when the films are prepared under pure Ar or Ar/O{sub 2} environment. However the average crystallite size increases while electrical resistance decreases with introduction of nitrogen and hydrogen in comparison to oxygen in argon. Nevertheless, the optimum value of optical transmittance and sheet resistance of the films deposited in pure argon are found to be 85-96% in the wavelength range 400-800 nm and 65 {Omega}/{open_square}, respectively.

  3. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    E-Print Network [OSTI]

    Zhu, Yuankun

    2014-01-01

    high efficiency multi-junction solar cells that harvest aeffective for multi-junction solar cells which consist ofhigh performance multi-junction solar cells. Cadmium oxide (

  4. Realization of write-once-read-many-times memory device with O{sub 2} plasma-treated indium gallium zinc oxide thin film

    SciTech Connect (OSTI)

    Liu, P. Chen, T. P. Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2014-01-20

    A write-once-read-many-times (WORM) memory devices based on O{sub 2} plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2?V is ?10{sup 9} ? for a device with the radius of 50??m) as a result of the O{sub 2} plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2?V is ?10{sup 3} ? for the radius of 50??m) by applying a voltage pulse (e.g., 10?V/1??s). The WORM device has good data-retention and reading-endurance capabilities.

  5. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    modeling of ? -Si : H solar cells with rough interfaces:of a p-i-n thin-film solar cell with front transparent con-amorphous-silicon-based P-I-N solar cells deposited on rough

  6. Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

    DOE Patents [OSTI]

    Auciello, Orlando

    2010-05-11

    A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

  7. Electron-beam-evaporated thin films of hafnium dioxide for fabricating...

    Office of Scientific and Technical Information (OSTI)

    complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution...

  8. ATOMIC LAYER DEPOSITION OF TITANIUM OXIDE THIN FILMS ONNANOPOROUS ALUMINA TEMPLATES FOR MEDICAL APPLICATIONS

    SciTech Connect (OSTI)

    Brigmon, R.

    2009-05-05

    Nanostructured materials may play a significant role in controlled release of pharmacologic agents for treatment of cancer. Many nanoporous polymer materials are inadequate for use in drug delivery. Nanoporous alumina provides several advantages over other materials for use in controlled drug delivery and other medical applications. Atomic layer deposition was used to coat all the surfaces of the nanoporous alumina membrane in order to reduce the pore size in a controlled manner. Both the 20 nm and 100 nm titanium oxide-coated nanoporous alumina membranes did not exhibit statistically lower viability compared to the uncoated nanoporous alumina membrane control materials. In addition, 20 nm pore size titanium oxide-coated nanoporous alumina membranes exposed to ultraviolet light demonstrated activity against Escherichia coli and Staphylococcus aureus bacteria. Nanostructured materials prepared using atomic layer deposition may be useful for delivering a pharmacologic agent at a precise rate to a specific location in the body. These materials may serve as the basis for 'smart' drug delivery devices, orthopedic implants, or self-sterilizing medical devices.

  9. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, André

    2012-11-26

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10-5 ?cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80% from 500-1250 nmmore »(including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.« less

  10. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    SciTech Connect (OSTI)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, André

    2012-11-26

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10-5 ?cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80% from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

  11. Tailoring the index of refraction of nanocrystalline hafnium oxide thin films

    SciTech Connect (OSTI)

    Vargas, Mirella [Department of Metallurgical and Materials Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)] [Department of Metallurgical and Materials Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States); Murphy, N. R. [Materials and Manufacturing Directorate (RX), 3005 Hobson Way, Wright-Patterson Air Force Base (WPAFB), Dayton, Ohio 45433 (United States)] [Materials and Manufacturing Directorate (RX), 3005 Hobson Way, Wright-Patterson Air Force Base (WPAFB), Dayton, Ohio 45433 (United States); Ramana, C. V., E-mail: rvchintalapalle@utep.edu [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)

    2014-03-10

    Hafnium oxide (HfO{sub 2}) films were grown by sputter-deposition by varying the growth temperature (T{sub s}?=?25–700?°C). HfO{sub 2} films grown at T{sub s}?

  12. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yuankun [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group; Mendelsberg, Rueben J. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group and Molecular Foundry; Zhu, Jiaqi [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Han, Jiecai [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Anders, Andre [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group

    2013-01-01

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). It is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 10-5 cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80percent from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

  13. Impact of annealing on the chemical structure and morphology of the thin-film CdTe/ZnO interface

    SciTech Connect (OSTI)

    Horsley, K. Hanks, D. A.; Weir, M. G.; Beal, R. J.; Wilks, R. G.; Blum, M.; Häming, M.; Hofmann, T.; Weinhardt, L.; and others

    2014-07-14

    To enable an understanding and optimization of the optoelectronic behavior of CdTe-ZnO nanocomposites, the morphological and chemical properties of annealed CdTe/ZnO interface structures were studied. For that purpose, CdTe layers of varying thickness (4–24?nm) were sputter-deposited on 100?nm-thick ZnO films on surface-oxidized Si(100) substrates. The morphological and chemical effects of annealing at 525?°C were investigated using X-ray Photoelectron Spectroscopy (XPS), X-ray-excited Auger electron spectroscopy, energy dispersive X-ray spectroscopy, scanning electron microscopy, and atomic force microscopy. We find a decrease of the Cd and Te surface concentration after annealing, parallel to an increase in Zn and O signals. While the as-deposited film surfaces show small grains (100?nm diameter) of CdTe on the ZnO surface, annealing induces a significant growth of these grains and separation into islands (with diameters as large as 1??m). The compositional change at the surface is more pronounced for Cd than for Te, as evidenced using component peak fitting of the Cd and Te 3d XPS peaks. The modified Auger parameters of Cd and Te are also calculated to further elucidate the local chemical environment before and after annealing. Together, these results suggest the formation of tellurium and cadmium oxide species at the CdTe/ZnO interface upon annealing, which can create a barrier for charge carrier transport, and might allow for a deliberate modification of interface properties with suitably chosen thermal treatment parameters.

  14. Structural and chemical investigations of CBD-and PVD-CdS buffer layers and interfaces in Cu(In,Ga)Se2-based thin film solar cells

    E-Print Network [OSTI]

    Romeo, Alessandro

    (In,Ga)Se2-based thin film solar cells D. Abou-Rasa,b,*, G. Kostorza , A. Romeob,1 , D. Rudmannb , A.N. Tiwarib,2 a ETH Zu¨rich, Institute of Applied Physics, 8093 Zu¨rich, Switzerland b ETH Zu¨rich, Thin Film Available online 8 December 2004 Abstract It is known that high-efficiency thin film solar cells based on Cu

  15. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  16. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Cheng, Yang-Tse (Rochester Hills, MI); Poli, Andrea A. (Livonia, MI); Meltser, Mark Alexander (Pittsford, NY)

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  17. Nanoscale chemical and mechanical characterization of thin films: sum frequency generation (SFG) vibrational spectroscopy at buried interfaces

    E-Print Network [OSTI]

    Kweskin, S.J.

    2006-01-01

    Halverson, D.E. Surface and Interface Analysis 1998 , 26,Polymer Surfaces and Interfaces II; Feast, W. J. ; Munro, H.Hobbins, N.D. Surf. Interface. Anal. 1980 , 2, 5. Briggs, D.

  18. Multifunctional thin film surface

    DOE Patents [OSTI]

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  19. Structural and chemical investigations of CBD-and PVD-CdS buffer layers and interfaces in Cu(In,Ga)Se2-based thin film solar cells

    E-Print Network [OSTI]

    Romeo, Alessandro

    (In,Ga)Se2-based thin film solar cells D. Abou-Rasa,b,*, G. Kostorza , A. Romeob,1 , D. Rudmannb , A Available online 8 December 2004 Abstract It is known that high-efficiency thin film solar cells based on Cu in efficiencies of solar cells with CBD- and PVD-CdS buffer layers can partly be explained by referring

  20. Effect of the substrate temperature on the physical properties of molybdenum tri-oxide thin films obtained through the spray pyrolysis technique

    SciTech Connect (OSTI)

    Martinez, H.M.; Torres, J.; Lopez Carreno, L.D.; Rodriguez-Garcia, M.E.

    2013-01-15

    Polycrystalline molybdenum tri-oxide thin films were prepared using the spray pyrolysis technique; a 0.1 M solution of ammonium molybdate tetra-hydrated was used as a precursor. The samples were prepared on Corning glass substrates maintained at temperatures ranging between 423 and 673 K. The samples were characterized through micro Raman, X-ray diffraction, optical transmittance and DC electrical conductivity. The species MoO{sub 3} (H{sub 2}O){sub 2} was found in the sample prepared at a substrate temperature of 423 K. As the substrate temperature rises, the water disappears and the samples crystallize into {alpha}-MoO{sub 3}. The optical gap diminishes as the substrate temperature rises. Two electrical transport mechanisms were found: hopping under 200 K and intrinsic conduction over 200 K. The MoO{sub 3} films' sensitivity was analyzed for CO and H{sub 2}O in the temperature range 160 to 360 K; the results indicate that CO and H{sub 2}O have a reduction character. In all cases, it was found that the sensitivity to CO is lower than that to H{sub 2}O. - Highlights: Black-Right-Pointing-Pointer A low cost technique is used which produces good material. Black-Right-Pointing-Pointer Thin films are prepared using ammonium molybdate tetra hydrated. Black-Right-Pointing-Pointer The control of the physical properties of the samples could be done. Black-Right-Pointing-Pointer A calculation method is proposed to determine the material optical properties. Black-Right-Pointing-Pointer The MoO{sub 3} thin films prepared by spray pyrolysis could be used as gas sensor.

  1. Structural and electrochemical characterization of two proton conducting oxide thin films for a microfabricated solid oxide fuel cell

    E-Print Network [OSTI]

    Capozzoli, Peter M

    2006-01-01

    The use of proton conducting oxide materials as an electrolyte offers the potential to reduce the operating temperature of a solid oxide fuel cell (SOFC), leading to improved thermal management and material compatibility. ...

  2. Thin film buried anode battery

    DOE Patents [OSTI]

    Lee, Se-Hee (Lakewood, CO); Tracy, C. Edwin (Golden, CO); Liu, Ping (Denver, CO)

    2009-12-15

    A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

  3. Wet chemical synthesis of quantum confined nanostructured tin oxide thin films by successive ionic layer adsorption and reaction technique

    SciTech Connect (OSTI)

    Murali, K.V., E-mail: kvmuralikv@gmail.com [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Nehru Arts and Science College, Kanhangad, Kerala 671314 (India); Ragina, A.J. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Nehru Arts and Science College, Kanhangad, Kerala 671314 (India); Preetha, K.C. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Sree Narayana College, Kannur, Kerala 670007 (India); Deepa, K.; Remadevi, T.L. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Pazhassi Raja N.S.S. College, Mattannur, Kerala 670702 (India)

    2013-09-01

    Graphical abstract: - Highlights: • Quantum confined SnO{sub 2} thin films were synthesized at 80 °C by SILAR technique. • Film formation mechanism is discussed. • Films with snow like crystallite morphology offer high specific surface area. • The blue-shifted value of band gap confirmed the quantum confinement effect. • Present synthesis has advantages – low cost, low temperature and green friendly. - Abstract: Quantum confined nanostructured SnO{sub 2} thin films were synthesized at 353 K using ammonium chloride (NH{sub 4}Cl) and other chemicals by successive ionic layer adsorption and reaction technique. Film formation mechanism is discussed. Structural, morphological, optical and electrical properties were investigated and compared with the as-grown and annealed films fabricated without NH{sub 4}Cl solution. SnO{sub 2} films were polycrystalline with crystallites of tetragonal structure with grain sizes lie in the 5–8 nm range. Films with snow like crystallite morphology offer high specific surface area. The blue-shifted value of band gap of as-grown films confirmed the quantum confinement effect of grains. Refractive index of the films lies in the 2.1–2.3 range. Films prepared with NH{sub 4}Cl exhibit relatively lower resistivity of the order of 10{sup 0}–10{sup ?1} ? cm. The present synthesis has advantages such as low cost, low temperature and green friendly, which yields small particle size, large surface–volume ratio, and high crystallinity SnO{sub 2} films.

  4. NMR characterization of thin films

    DOE Patents [OSTI]

    Gerald, II, Rex E. (Brookfield, IL); Klingler, Robert J. (Glenview, IL); Rathke, Jerome W. (Homer Glen, IL); Diaz, Rocio (Chicago, IL); Vukovic, Lela (Westchester, IL)

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  5. NMR characterization of thin films

    DOE Patents [OSTI]

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  6. Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby

    DOE Patents [OSTI]

    Zhang, Ji-Guang (Golden, CO); Tracy, C. Edwin (Golden, CO); Benson, David K. (Golden, CO); Turner, John A. (Littleton, CO); Liu, Ping (Lakewood, CO)

    2000-01-01

    A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

  7. Effects of low-temperature (120?°C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    SciTech Connect (OSTI)

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae; Oh, Byung Su; Joo, Min-Kyu; Ahn, Seung-Eon

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120?°C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  8. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    SciTech Connect (OSTI)

    Lai, Hsin-Cheng [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Pei, Zingway, E-mail: zingway@dragon.nchu.edu.tw [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Center of Nanoscience and Nanotechnology, National Chung Hsing University, Taichung 40227, Taiwan (China); Jian, Jyun-Ruri; Tzeng, Bo-Jie [Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China)

    2014-07-21

    In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100?°C. The a-IGZO TFT exhibit a mobility of 5.13?cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4?mm (strain?=?1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10?V for 1500?s. Thus, this technology is suitable for use in flexible displays.

  9. Thin film photovoltaic cell

    DOE Patents [OSTI]

    Meakin, John D. (Newark, DE); Bragagnolo, Julio (Newark, DE)

    1982-01-01

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  10. Thin Film Transistors On Plastic Substrates

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

    2004-01-20

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

  11. Thin film superconductor magnetic bearings

    DOE Patents [OSTI]

    Weinberger, Bernard R. (Avon, CT)

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  12. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    151 Two-stage thin film deposition process15 Description of thin film depositionProcess Model . . . . 54 Porous Thin-Film Deposition Process

  13. Laser Induced Breakdown Spectroscopy and Applications Toward Thin Film Analysis

    E-Print Network [OSTI]

    Owens, Travis Nathan

    2011-01-01

    Organic Thin Films 4.1 Introduction . . . . . . . . . . . .T iO 2 thin films. . . . . . . . . . . . . . . . . . . . .properties of the organic thin films. . . . . . . . .

  14. Thin film composite electrolyte

    DOE Patents [OSTI]

    Schucker, Robert C. (The Woodlands, TX)

    2007-08-14

    The invention is a thin film composite solid (and a means for making such) suitable for use as an electrolyte, having a first layer of a dense, non-porous conductive material; a second layer of a porous ionic conductive material; and a third layer of a dense non-porous conductive material, wherein the second layer has a Coefficient of thermal expansion within 5% of the coefficient of thermal expansion of the first and third layers.

  15. Functionality Tuning in Vertically Aligned Nanocomposite Thin Films 

    E-Print Network [OSTI]

    Chen, Aiping

    2013-04-04

    Vertically aligned nanocomposite (VAN) oxide thin films are unique nanostructures with two-phase self-assembled, heteroepitaxially grown on single-crystal substrates. Both phases tend to grow vertically and simultaneously ...

  16. Fatigue failure in thin-film polycrystalline silicon is due to subcritical cracking within the oxide layer

    E-Print Network [OSTI]

    Ritchie, Robert

    the oxide layer D. H. Alsem Department of Materials Science and Engineering, University of California SiO2 oxide layer "reaction-layer" fatigue .1,7,8,18 The mechanism of oxide thickening is as yet

  17. Conditioning effects on La1-xSrxMnO3-Yttria stabilized Zirconia electrodes for thin-film solid oxide fuel cells

    E-Print Network [OSTI]

    2002-01-01

    x MnO 3 -Yttria Stabilized Zirconia Electrodes for Thin-FilmMnO 3 -yttria stabilized zirconia) were deposited onto dense1.5 h in acetone, using zirconia milling media. The LSM- YSZ

  18. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Lauf, Robert J. (Oak Ridge, TN); Hoffheins, Barbara S. (Knoxville, TN); Fleming, Pamela H. (Oak Ridge, TN)

    1994-01-01

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

  19. Oxidation of In2S3 films to synthetize In2S3(1-x)O3x thin films as a buffer layer in solar cells

    E-Print Network [OSTI]

    Boyer, Edmond

    for fabricating Cd-free CIGS solar cells [1, 2, 3]. One of its advantages is that it can be obtained from solutionOxidation of In2S3 films to synthetize In2S3(1-x)O3x thin films as a buffer layer in solar cells S layers for solar cells. PACS : 68.55.ag Semiconductors, 68.55.J Morphology of films , 68.55.Nq

  20. Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere

    SciTech Connect (OSTI)

    Nie, Man, E-mail: man.nie@helmholtz-berlin.de; Mete, Tayfun; Ellmer, Klaus [Department of Solar Fuels and Energy Storage Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D14109 Berlin (Germany)

    2014-04-21

    The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w???d{sub f}{sup ?}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent ? is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ? increases with film thickness also with a power law according to ????d{sub f}{sup z} with exponents z?=?0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2?+?1 dimensions is discussed for the ITO growth in this work.

  1. An approach to simultaneously test multiple devices for high-throughput production of thin film electronics

    E-Print Network [OSTI]

    Kumar, A.; Flewitt, A. J.

    2015-07-28

    of transparent flexible thin-film transistors using amorphous oxide semiconductors.,” Nature, vol. 432, no. 7016, pp. 488–492, 2004. [2] E. Fortunato, P. Barquinha, and R. Martins, “Oxide semiconductor thin-film transistors: a review of recent advances... , M. Lavine, and R. Coontz, “Looking Beyond Silicon,” Science, vol. 327, no. 5973. pp. 1595–1595, 2010. [6] A. J. Flewitt, “Hydrogenated Amorphous Silicon Thin Film Transistors (a Si:H TFTs),” Handbook of Visual Display Technology-Springer, 2012...

  2. Transparent electrode requirements for thin film solar cell modules Michael W. Rowell and Michael D. McGehee*

    E-Print Network [OSTI]

    McGehee, Michael

    Transparent electrode requirements for thin film solar cell modules Michael W. Rowell and Michael D The transparent conductor (TC) layer in thin film solar cell modules has a significant impact on the power to replace conducting oxides in this geometry. Thin film solar cell modules can be manufactured either

  3. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

    1994-11-22

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

  4. Microstructure, residual stress, and mechanical properties of thin film materials for a microfabricated solid oxide fuel cell

    E-Print Network [OSTI]

    Quinn, David John, Sc. D. Massachusetts Institute of Technology

    2006-01-01

    The microstructure and residual stress of sputter-deposited films for use in microfabricated solid oxide fuel cells are presented. Much of the work focuses on the characterization of a candidate solid electrolyte: Yttria ...

  5. Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications

    E-Print Network [OSTI]

    Socratous, Josephine; Banger, Kulbinder K.; Vaynzof, Yana; Sadhanala, Aditya; Brown, Adam D.; Sepe, Alessandro; Steiner, Ullrich; Sirringhaus, Henning

    2015-02-18

    of vehicles or build- ings. [ 3 ] Most of the research so far, has focused on oxides deposited via low- temperature sputtering techniques and a wide range of ternary and quaternary elemental compositions has been explored with InGaZnO (IGZO) being one... annealing temperature. Figure S5 (Supporting Information) shows corroborating electrical data for the quaternary oxide IGZO for different gallium doping. The presence of gallium is known to suppress oxygen vacan- cies due to its strong bond with oxygen...

  6. Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy Thin Films Studied Using Atom Probe Tomography: Comparison Of Experiments And Simulation

    SciTech Connect (OSTI)

    Devaraj, Arun; Kaspar, Tiffany C.; Ramanan, Sathvik; Walvekar, Sarita K.; Bowden, Mark E.; Shutthanandan, V.; Kurtz, Richard J.

    2014-11-21

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxial (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation it is very challenging to characterize by conventional techniques. Therefor laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr0.61Mo0.39, Cr0.77Mo0.23, and Cr0.32V0.68 alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were thus confirmed.

  7. Nanoscale phase separation in epitaxial Cr-Mo and Cr-V alloy thin films studied using atom probe tomography: Comparison of experiments and simulation

    SciTech Connect (OSTI)

    Devaraj, A.; Ramanan, S.; Walvekar, S.; Bowden, M. E.; Shutthanandan, V.; Kaspar, T. C.; Kurtz, R. J.

    2014-11-21

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxy (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However, the presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation, it is very challenging to characterize by conventional techniques. Therefore, laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr{sub 0.61}Mo{sub 0.39}, Cr{sub 0.77}Mo{sub 0.23}, and Cr{sub 0.32}V{sub 0.68} alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus, the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were confirmed.

  8. Substrate heater for thin film deposition

    DOE Patents [OSTI]

    Foltyn, Steve R. (111 Beryl St., Los Alamos, NM 87544)

    1996-01-01

    A substrate heater for thin film deposition of metallic oxides upon a target substrate configured as a disk including means for supporting in a predetermined location a target substrate configured as a disk, means for rotating the target substrate within the support means, means for heating the target substrate within the support means, the heating means about the support means and including a pair of heating elements with one heater element situated on each side of the predetermined location for the target substrate, with one heater element defining an opening through which desired coating material can enter for thin film deposition and with the heating means including an opening slot through which the target substrate can be entered into the support means, and, optionally a means for thermal shielding of the heating means from surrounding environment is disclosed.

  9. Vertically Aligned Nanocomposite Thin Films 

    E-Print Network [OSTI]

    Bi, Zhenxing

    2012-07-16

    and epitaxial growth ability on given substrates. In the present work, we investigated unique epitaxial two-phase VAN (BiFeO3)x:(Sm2O3)1-x and (La0.7Sr0.3MnO3)x:(Mn3O4)1-x thin film systems by pulsed laser deposition. These VAN thin films exhibit a highly...

  10. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    of a p-i-n thin-film solar cell with front transparent con-for thin-film a-si:h solar cells. Progress in Photovoltaics,in thin-film silicon solar cells. Optics Communications,

  11. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    microcrystalline silicon thin films and solar cells. Journalof a p-i-n thin-film solar cell with front transparent con-microcrystalline silicon thin film solar cells. Solar Energy

  12. Nanostructured europium oxide thin films deposited by pulsed laser ablation of a metallic target in a He buffer atmosphere

    SciTech Connect (OSTI)

    Luna, H.; Franceschini, D. F.; Prioli, R.; Guimaraes, R. B.; Sanchez, C. M.; Canal, G. P.; Barbosa, M. D. L.; Galvao, R. M. O. [Instituto de Fisica, Universidade Federal do Rio de Janeiro, Cx. Postal 68528, Rio de Janeiro, RJ 21941-972 (Brazil); Instituto de Fisica, Universidade Federal Fluminense, Niteroi, RJ 24210-346 (Brazil); Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, Rua Marques de Sao Vicente 225, 22453-970, Rio de Janeiro, RJ (Brazil); Instituto de Fisica, Universidade Federal Fluminense, Niteroi, RJ 24210-346 (Brazil); Centro Brasileiro de Pesquisas Fisicas, Laboratorio de Plasmas Aplicados, Rua Xavier Sigaud 150, 22290-180, Rio de Janeiro, RJ (Brazil); Instituto de Fisica, Departamento de Fisica Nuclear, Universidade de Sao Paulo, Caixa Postal 66328, 05315-970, Sao Paulo, SP (Brazil); Centro Brasileiro de Pesquisas Fisicas, Laboratorio de Plasmas Aplicados, Rua Xavier Sigaud 150, 22290-180, Rio de Janeiro, RJ (Brazil)

    2010-09-15

    Nanostrucured europium oxide and hydroxide films were obtained by pulsed Nd:YAG (532 nm) laser ablation of a europium metallic target, in the presence of a 1 mbar helium buffer atmosphere. Both the produced film and the ambient plasma were characterized. The plasma was monitored by an electrostatic probe, for plume expansion in vacuum or in the presence of the buffer atmosphere. The time evolution of the ion saturation current was obtained for several probe to substrate distances. The results show the splitting of the plume into two velocity groups, being the lower velocity profile associated with metal cluster formation within the plume. The films were obtained in the presence of helium atmosphere, for several target-to-substrate distances. They were analyzed by Rutherford backscattering spectrometry, x-ray diffraction, and atomic force microscopy, for as-deposited and 600 deg. C treated-in-air samples. The results show that the as-deposited samples are amorphous and have chemical composition compatible with europium hydroxide. The thermally treated samples show x-ray diffraction peaks of Eu{sub 2}O{sub 3}, with chemical composition showing excess oxygen. Film nanostructuring was shown to be strongly correlated with cluster formation, as shown by velocity splitting in probe current versus time plots.

  13. Effect of Dual-Function Nano-Structured Silicon Oxide Thin Film on Multi-Junction Solar Cells

    SciTech Connect (OSTI)

    Yan, B.; Sivec, L.; Yue, G.; Jiang, C. S.; Yang, J.; Guha, S.

    2011-01-01

    We present our recent study of using nano-structured hydrogenated silicon oxide films (nc-SiO{sub x}:H) as a dual-function layer in multi-junction solar cells. The nc-SiO{sub x}:H films were deposited using very high frequency glow discharge of a SiH{sub 4} (or Si{sub 2}H{sub 6}), CO{sub 2}, PH{sub 3}, and H{sub 2} gas mixture. By optimizing deposition parameters, we obtained 'dual function' nc-SiO{sub x}:H material characterized by a conductivity suitable for use as an n layer and optical properties suitable for use as an inter-reflection layer. We tested the nc-SiO{sub x}:H by replacing the normal n-type material in the tunnel junction of a multi-junction structure. The advantage of the dual-function nc-SiO{sub x}:H layer is twofold; one is to simplify the cell structure, and the other is to reduce any optical loss associated with the inter-reflection layer. Quantum efficiency measurements show the gain in top cell current is equal to or greater than the loss in bottom cell current for a-Si:H/nc-Si:H structures. In addition, a thinner a-Si:H top cell with the nc-SiO{sub x}:H n layer improves the top-cell stability, thereby providing higher stabilized solar cell efficiency. We also used the dual-function layer between the middle and the bottom cells in a-Si:H/a-SiGe:H/nc-Si:H triple-junction structures. The gain in the middle cell current is {approx}1.0 mA/cm{sup 2}, leading to an initial active-area efficiency of 14.8%.

  14. Modeling of capacitance transients of thin-film solar cells: A valuable tool to gain information on perturbing layers or interfaces

    SciTech Connect (OSTI)

    Lauwaert, Johan Van Puyvelde, Lisanne; Vrielinck, Henk; Lauwaert, Jeroen; Thybaut, Joris W.

    2014-02-03

    Thin-film electronic and photovoltaic devices often comprise, in addition to the anticipated p-n junctions, additional non-ideal ohmic contacts between layers. This may give rise to additional signals in capacitance spectroscopy techniques that are not directly related to defects in the structure. In this paper, we present a fitting algorithm for transient signals arising from such an additional junction. The fitting results are in excellent agreement with the diode characteristics extracted from static measurements on individual components. Finally, the algorithm is applied for determining the barriers associated with anomalous signals reported for selected CuIn{sub 1–x}Ga{sub x}Se{sub 2} and CdTe solar cells.

  15. Thin film lithium-based batteries and electrochromic devices fabricated with nanocomposite electrode materials

    DOE Patents [OSTI]

    Gillaspie, Dane T; Lee, Se-Hee; Tracy, C. Edwin; Pitts, John Roland

    2014-02-04

    Thin-film lithium-based batteries and electrochromic devices (10) are fabricated with positive electrodes (12) comprising a nanocomposite material composed of lithiated metal oxide nanoparticles (40) dispersed in a matrix composed of lithium tungsten oxide.

  16. Experimental modeling of intergranular exchange coupling for perpendicular thin film media

    E-Print Network [OSTI]

    Laughlin, David E.

    does exist in the CoCrPt-oxide layer of present perpendicular thin film media, especially for media to quantitatively determine the ferromagnetic ex- change coupling through an oxide layer as a function of ox- ide

  17. Long-wave instabilities and saturation in thin film equations

    E-Print Network [OSTI]

    Pugh, Mary

    to shorter wavelengths which then dissipate the energy. The nonlinearity in the KS equation is advective.2) The equation arises as an interface model in bio-fluids [15], solar convec- tion [19], and binary alloys [48Long-wave instabilities and saturation in thin film equations A. L. Bertozzi Department

  18. Longwave instabilities and saturation in thin film equations

    E-Print Network [OSTI]

    Pugh, Mary

    then dissipate the energy. The nonlinearity in the KS equation is advective, and a#ects the dy­ namics di.2) The equation arises as an interface model in bio­fluids [15], solar convec­ tion [19], and binary alloys [48Long­wave instabilities and saturation in thin film equations A. L. Bertozzi Department

  19. Low work function, stable thin films

    DOE Patents [OSTI]

    Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

    2000-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  20. Thin film-coated polymer webs

    DOE Patents [OSTI]

    Wenz, Robert P. (Cottage Grove, MN); Weber, Michael F. (Shoreview, MN); Arudi, Ravindra L. (Woodbury, MN)

    1992-02-04

    The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

  1. Semiconductor-nanocrystal/conjugated polymer thin films

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Oakland, CA); Dittmer, Janke J. (Munich, DE); Huynh, Wendy U. (Munich, DE); Milliron, Delia (Berkeley, CA)

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  2. Modification of energy band alignment and electric properties of Pt/Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}/Pt thin-film ferroelectric varactors by Ag impurities at interfaces

    SciTech Connect (OSTI)

    Hirsch, S.; Komissinskiy, P., E-mail: komissinskiy@oxide.tu-darmstadt.de; Flege, S.; Li, S.; Rachut, K.; Klein, A.; Alff, L. [Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany)

    2014-06-28

    We report on the effects of Ag impurities at interfaces of parallel-plate Pt/Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}/Pt thin film ferroelectric varactors. Ag impurities occur at the interfaces due to diffusion of Ag from colloidal silver paint used to attach the varactor samples with their back side to the plate heated at 600–750?°C during deposition of Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}. X-ray photoelectron spectroscopy and secondary ion mass spectrometry suggest that amount and distribution of Ag adsorbed at the interfaces depend strongly on the adsorbent surface layer. In particular, Ag preferentially accumulates on top of the Pt bottom electrode. The presence of Ag significantly reduces the barrier height between Pt and Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} leading to an increased leakage current density and, thus, to a severe degradation of the varactor performance.

  3. Preparation and characterization of TL-based superconducting thin films 

    E-Print Network [OSTI]

    Wang, Pingshu

    1995-01-01

    A simple method for growth of Tl-based superconducting thin films is described. In this method, the precursor was prepared in a vacuum chamber by deposition of Ba, Ca and Cu metals or a Ba-Ca alloy and Cu metal. The precursor was then oxidized...

  4. Thin film photovoltaic cells

    DOE Patents [OSTI]

    Rothwarf, Allen (Philadelphia, PA)

    1981-01-01

    A solar cell has as its transparent electrical contact a grid made from a non-noble metal by providing a layer of copper oxide between the transparent electrical contact and the absorber-generator.

  5. Chemical Heterogeneities on La0.6Sr0.4CoO3-Thin FilmsCorrelations to Cathode Surface Activity and Stability

    E-Print Network [OSTI]

    Yildiz, Bilge

    Interfaces, Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, 77. reported pulsed laser deposited (PLD) LSC thin film cathodes on yttria-stabilized zirconia (YSZ

  6. Thin films and uses

    DOE Patents [OSTI]

    Baskaran, Suresh (Kennewick, WA); Graff, Gordon L. (Kennewick, WA); Song, Lin (Richland, WA)

    1998-01-01

    The invention provides a method for synthesizing a titanium oxide-containing film comprising the following steps: (a) preparing an aqueous solution of a titanium chelate with a titanium molarity in the range of 0.01M to 0.6M. (b) immersing a substrate in the prepared solution, (c) decomposing the titanium chelate to deposit a film on the substrate. The titanium chelate maybe decomposed acid, base, temperature or other means. A preferred method provides for the deposit of adherent titanium oxide films from C2 to C5 hydroxy carboxylic acids. In another aspect the invention is a novel article of manufacture having a titanium coating which protects the substrate against ultraviolet damage. In another aspect the invention provides novel semipermeable gas separation membranes, and a method for producing them.

  7. Apparatus for making cathodo- and photo- luminescent measurements of thin film phosphors 

    E-Print Network [OSTI]

    Babuchna, Paul Michael

    1998-01-01

    the understanding of the thin film phosphor, tungsten doped zinc oxide. Principally, a vacuum system is constructed and provides for both photo-and cathode-phosphor excitations. A measurement capability is then included. Finally, additions are mentioned...

  8. Scanning tunneling microscopic studies of SiO2 thin film supported metal nano-clusters 

    E-Print Network [OSTI]

    Min, Byoung Koun

    2005-11-01

    This dissertation is focused on understanding heterogeneous metal catalysts supported on oxides using a model catalyst system of SiO2 thin film supported metal nano-clusters. The primary technique applied to this study is scanning tunneling...

  9. Preparation of redox polymer cathodes for thin film rechargeable batteries

    DOE Patents [OSTI]

    Skotheim, T.A.; Lee, H.S.; Okamoto, Yoshiyuki.

    1994-11-08

    The present invention relates to the manufacture of thin film solid state electrochemical devices using composite cathodes comprising a redox polymer capable of undergoing oxidation and reduction, a polymer solid electrolyte and conducting carbon. The polymeric cathode material is formed as a composite of radiation crosslinked polymer electrolytes and radiation crosslinked redox polymers based on polysiloxane backbones with attached organosulfur side groups capable of forming sulfur-sulfur bonds during electrochemical oxidation.

  10. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    Solar Energy Materials and Solar Cells, 86:207–216, 2005. [silicon thin films and solar cells. Journal of Appliedof a p-i-n thin-film solar cell with front transparent con-

  11. Epitaxial thin film growth of LiH using a liquid-Li atomic template

    SciTech Connect (OSTI)

    Oguchi, Hiroyuki; Ikeshoji, Tamio; Orimo, Shin-ichi; Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro; Kuwano, Hiroki

    2014-11-24

    We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al{sub 2}O{sub 3} substrates indicated polycrystalline films with a LiAlO{sub 2} secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides.

  12. Polycrystalline Thin Film Solar Cell Technologies: Preprint

    SciTech Connect (OSTI)

    Ullal, H. S.

    2008-12-01

    Rapid progress is being made by CdTe and CIGS-based thin-film PV technologies in entering commercial markets.

  13. Theoretical simulations of protective thin film Fabry-Pérot filters for integrated optical elements of diode pumped alkali lasers (DPAL)

    SciTech Connect (OSTI)

    Quarrie, L., E-mail: Lindsay.Quarrie@l-3com.com, E-mail: lindsay.o.quarrie@gmail.com [New Mexico Institute of Mining and Technology, Department of Materials Engineering, 801 LeRoy Place, Socorro, NM 87801 (United States); Air Force Research Laboratory, AFRL/RDLC Laser CoE, 3550 Aberdeen Avenue SE, Kirtland AFB, NM 87117-5776 (United States)

    2014-09-15

    The lifetime of Diode-Pumped Alkali Lasers (DPALs) is limited by damage initiated by reaction of the glass envelope of its gain medium with rubidium vapor. Rubidium is absorbed into the glass and the rubidium cations diffuse through the glass structure, breaking bridging Si-O bonds. A damage-resistant thin film was developed enhancing high-optical transmission at natural rubidium resonance input and output laser beam wavelengths of 780 nm and 795 nm, while protecting the optical windows of the gain cell in a DPAL. The methodology developed here can be readily modified for simulation of expected transmission performance at input pump and output laser wavelengths using different combination of thin film materials in a DPAL. High coupling efficiency of the light through the gas cell was accomplished by matching the air-glass and glass-gas interfaces at the appropriate wavelengths using a dielectric stack of high and low index of refraction materials selected to work at the laser energies and protected from the alkali metal vapor in the gain cell. Thin films as oxides of aluminum, zirconium, tantalum, and silicon were selected allowing the creation of Fabry-Perot optical filters on the optical windows achieving close to 100% laser transmission in a solid optic combination of window and highly reflective mirror. This approach allows for the development of a new whole solid optic laser.

  14. Thin Film Encapsulation Methods for Large Area MEMS Packaging

    E-Print Network [OSTI]

    Mahajerin, Armon

    2012-01-01

    P. J. French, “Robust Wafer-Level Thin-Film Encapsulation ofThe Elastic Properties of Thin- Film Silicon Nitride,” IEEELPCVD Silicon Nitride Thin Films at Cryogenic Temperatures,”

  15. Material Development for Highly Processable Thin Film Solar Cells

    E-Print Network [OSTI]

    Bob, Brion

    2014-01-01

    Structuring of Thin-film Solar Cells with a Single Laser1. Background on Thin Film Solar Cells and TransparentCuIn(Se,S)2 thin film solar cells: Secondary phases and

  16. Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization

    E-Print Network [OSTI]

    Bielecki, Anthony

    2013-01-01

    Katagiri, Cu2ZnSnS4 thin film solar cells, Thin Solid FilmsIndium Galenide Films Thin-film solar cells are created bycandidate for thin- film solar cells. CIGS solar cell

  17. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    to High-Efficiency CZTSSe Thin-film Solar Cells, Proc. IEEEMetal chalcogenide-based thin film solar cells are currentlyof metal chalcogenide thin film solar cells A dissertation

  18. Oxygen vacancies at the surface of SrTiO{sub 3} thin films

    SciTech Connect (OSTI)

    Silva, Alexandre R.; Dalpian, Gustavo M.

    2014-01-21

    The two-dimensional electron gas (2DEG) observed at the surface of oxide thin films and at the interface between two oxides has been widely discussed, but the mechanism responsible for this behavior is still not well understood. In this work, we study the properties of the SrTiO{sub 3} (001) surface and show that defects are necessary in order to explain this 2DEG. We study the properties of oxygen vacancies at the TiO{sub 2} and SrO terminated surface, and conclude they can explain the metallic behavior experimentally observed. There is a strong tendency for these vacancies to be localized at the surface, where the formation energy is less than 2.92?eV.

  19. Effect of deposition times on structure of Ga-doped ZnO thin films as humidity sensor

    SciTech Connect (OSTI)

    Khalid, Faridzatul Shahira; Awang, Rozidawati [School of Applied Physics, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia)

    2014-09-03

    Gallium doped zinc oxide (GZO) has good electrical property. It is widely used as transparent electrode in photovoltaic devices, and sensing element in gas and pressure sensors. GZO thin film was prepared using magnetron sputtering. Film deposition times were set at 10, 15, 20, 25 and 30 minutes to get samples of different thickness. X-ray diffraction (XRD) was used to determine the structure of GZO thin films. Structure for GZO thin film is hexagonal wurtzite structure. Morphology and thickness of GZO thin films was observed from FESEM micrographs. Grain size and thickness of thin films improved with increasing deposition times. However, increasing the thickness of thin films occur below 25 minutes only. Electrical properties of GZO thin films were studied using a four-point probe technique. The changes in the structure of the thin films lead to the changed of their electrical properties resulting in the reduction of the film resistance. These thin films properties significantly implying the potential application of the sample as a humidity sensor.

  20. Thin films of mixed metal compounds

    DOE Patents [OSTI]

    Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  1. Atomistic surface erosion and thin film growth modelled over...

    Office of Scientific and Technical Information (OSTI)

    Atomistic surface erosion and thin film growth modelled over realistic time scales Citation Details In-Document Search Title: Atomistic surface erosion and thin film growth...

  2. Institute of Photo Electronic Thin Film Devices and Technology...

    Open Energy Info (EERE)

    Institute of Photo Electronic Thin Film Devices and Technology of Nankai University Jump to: navigation, search Name: Institute of Photo-Electronic Thin Film Devices and Technology...

  3. Solvothermal Thin Film Deposition of Electron Blocking Layers...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solvothermal Thin Film Deposition of Electron Blocking Layers Home > Research > ANSER Research Highlights > Solvothermal Thin Film Deposition of Electron Blocking Layers...

  4. High Temperature Thin Film Polymer Dielectric Based Capacitors...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Temperature Thin Film Polymer Dielectric Based Capacitors for HEV Power Electronic Systems High Temperature Thin Film Polymer Dielectric Based Capacitors for HEV Power Electronic...

  5. A Sensitivity Analysis of a Thin Film Conductivity Estimation...

    Office of Scientific and Technical Information (OSTI)

    Conference: A Sensitivity Analysis of a Thin Film Conductivity Estimation Method Citation Details In-Document Search Title: A Sensitivity Analysis of a Thin Film Conductivity...

  6. Multilayer Thin-Film Thermoelectric Materials for Vehicle Applications...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Multilayer Thin-Film Thermoelectric Materials for Vehicle Applications Multilayer Thin-Film Thermoelectric Materials for Vehicle Applications 2004 Diesel Engine Emissions Reduction...

  7. Semiconductor-nanocrystal/conjugated polymer thin films (Patent...

    Office of Scientific and Technical Information (OSTI)

    Semiconductor-nanocrystalconjugated polymer thin films Citation Details In-Document Search Title: Semiconductor-nanocrystalconjugated polymer thin films You are accessing a...

  8. Synthesis of thin films and materials utilizing a gaseous catalyst

    DOE Patents [OSTI]

    Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

    2013-10-29

    A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

  9. Oxygen Electrocatalysis on Epitaxial La[subscript 0.6]Sr[subscript 0.4]CoO[subscript 3-?] Perovskite Thin Films for Solid Oxide Fuel Cells

    E-Print Network [OSTI]

    Crumlin, Ethan J.

    Hetero-structured interfaces of oxides, which can exhibit reactivity characteristics remarkably different from bulk oxides, are interesting systems to explore in search of highly active fuel cell catalysts for oxygen ...

  10. Transparent conducting thin films for spacecraft applications

    SciTech Connect (OSTI)

    Perez-Davis, M.E.; Malave-Sanabria, T.; Hambourger, P.; Rutledge, S.K.; Roig, D.; Degroh, K.K.; Hung, C.

    1994-01-01

    Transparent conductive thin films are required for a variety of optoelectronic applications: automotive and aircraft windows, and solar cells for space applications. Transparent conductive coatings of indium-tin-oxide (ITO)-magnesium fluoride (MgF2) and aluminum doped zinc oxide (AZO) at several dopant levels are investigated for electrical resistivity (sheet resistance), carrier concentration, optical properties, and atomic oxygen durability. The sheet resistance values of ITO-MgF2 range from 10[sup 2] to 10[sup 11] ohms/square, with transmittance of 75 to 86 percent. The AZO films sheet resistances range from 10[sup 7] to 10[sup 11] ohms/square with transmittances from 84 to 91 percent. It was found that in general, with respect to the optical properties, the zinc oxide (ZnO), AZO, and the high MgF2 content ITO-MgF2 samples, were all durable to atomic oxygen plasma, while the low MgF2 content of ITO-MgF2 samples were not durable to atomic oxygen plasma exposure.

  11. Shielding superconductors with thin films

    E-Print Network [OSTI]

    Posen, Sam; Catelani, Gianluigi; Liepe, Matthias U; Sethna, James P

    2015-01-01

    Determining the optimal arrangement of superconducting layers to withstand large amplitude AC magnetic fields is important for certain applications such as superconducting radiofrequency cavities. In this paper, we evaluate the shielding potential of the superconducting film/insulating film/superconductor (SIS') structure, a configuration that could provide benefits in screening large AC magnetic fields. After establishing that for high frequency magnetic fields, flux penetration must be avoided, the superheating field of the structure is calculated in the London limit both numerically and, for thin films, analytically. For intermediate film thicknesses and realistic material parameters we also solve numerically the Ginzburg-Landau equations. It is shown that a small enhancement of the superheating field is possible, on the order of a few percent, for the SIS' structure relative to a bulk superconductor of the film material, if the materials and thicknesses are chosen appropriately.

  12. Thin film battery and method for making same

    DOE Patents [OSTI]

    Bates, John B. (Oak Ridge, TN); Dudney, Nancy J. (Knoxville, TN); Gruzalski, Greg R. (Oak Ridge, TN); Luck, Christopher F. (Knoxville, TN)

    1994-01-01

    Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

  13. Characterization of Thin Films by XAFS: Application to Spintronics Materials

    SciTech Connect (OSTI)

    Heald, Steve M.; Kaspar, Tiffany C.; Droubay, Timothy C.; Chambers, Scott A.

    2009-10-25

    X-ray absorption fine structure (XAFS) has proven very valuable in characterizing thin films. This is illustrated with some examples from the area of diluted magnetic semiconductor (DMS) materials for spintronics applications. A promising route to DMS materials is doping of oxides such as TiO2 and ZnO with magnetic atoms such as Co. These can be grown as epitaxial thin films on various substrates. XAFS is especially valuable for characterizing the dopant atoms. The near edge region is sensitive to the symmetry of the bonding and valence of the dopants, and the extended XAFS can determine the details of the lattice site. XAFS is also valuable for detecting metallic nanoparticles. These can be difficult to detect by other methods, and can give a spurious magnetic signal. The power of XAFS is illustrated by examples from studies on Co doped ZnO films.

  14. Thin film battery and method for making same

    DOE Patents [OSTI]

    Bates, J.B.; Dudney, N.J.; Gruzalski, G.R.; Luck, C.F.

    1994-08-16

    Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode. Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between [minus]15 C and 150 C. 9 figs.

  15. TI--CR--AL--O thin film resistors

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Schmid, Anthony P. (Solana Beach, CA)

    2000-01-01

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  16. MEMS-based thin-film fuel cells

    DOE Patents [OSTI]

    Jankowksi, Alan F.; Morse, Jeffrey D.

    2003-10-28

    A micro-electro-mechanical systems (MEMS) based thin-film fuel cells for electrical power applications. The MEMS-based fuel cell may be of a solid oxide type (SOFC), a solid polymer type (SPFC), or a proton exchange membrane type (PEMFC), and each fuel cell basically consists of an anode and a cathode separated by an electrolyte layer. Additionally catalyst layers can also separate the electrodes (cathode and anode) from the electrolyte. Gas manifolds are utilized to transport the fuel and oxidant to each cell and provide a path for exhaust gases. The electrical current generated from each cell is drawn away with an interconnect and support structure integrated with the gas manifold. The fuel cells utilize integrated resistive heaters for efficient heating of the materials. By combining MEMS technology with thin-film deposition technology, thin-film fuel cells having microflow channels and full-integrated circuitry can be produced that will lower the operating temperature an will yield an order of magnitude greater power density than the currently known fuel cells.

  17. Structural characterization of thin film photonic crystals

    SciTech Connect (OSTI)

    Subramania, G.; Biswas, R.; Constant, K.; Sigalas, M. M.; Ho, K. M.

    2001-06-15

    We quantitatively analyze the structure of thin film inverse-opal photonic crystals composed of ordered arrays of air pores in a background of titania. Ordering of the sphere template and introduction of the titania background were performed simultaneously in the thin film photonic crystals. Nondestructive optical measurements of backfilling with high refractive index liquids, angle-resolved reflectivity, and optical spectroscopy were combined with band-structure calculations. The analysis reveals a thin film photonic crystal structure with a very high filling fraction (92{endash}94%) of air and a substantial compression along the c axis ({similar_to}22{endash}25%).

  18. Permanent laser conditioning of thin film optical materials

    DOE Patents [OSTI]

    Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

    1995-12-05

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

  19. Permanent laser conditioning of thin film optical materials

    DOE Patents [OSTI]

    Wolfe, C. Robert (Palo Alto, CA); Kozlowski, Mark R. (Pleasanton, CA); Campbell, John H. (Livermore, CA); Staggs, Michael (Tracy, CA); Rainer, Frank (Livermore, CA)

    1995-01-01

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

  20. 2446 IEEE TRANSACTIONS ON MAGNETICS, VOL. 46, NO. 6, JUNE 2010 Buffer Layers for Highly Ordered L10 FePt-Oxide Thin Film Granular

    E-Print Network [OSTI]

    Laughlin, David E.

    at moderate depo- sition temperatures. In most previous studies, a FePt-Oxide layer is directly deposited on a (001) textured MgO layer. By introducing a buffer layer in between the FePt-oxide layer and the MgO underlayer, we are able to substantially enhance the L10 ordering of the FePt-oxide layer while lowering

  1. Durham Workshop, Dec 2005Durham Workshop, Dec 2005 Thin Film Metrology UsingThin Film Metrology Using

    E-Print Network [OSTI]

    Greenaway, Alan

    Durham Workshop, Dec 2005Durham Workshop, Dec 2005 Thin Film Metrology UsingThin Film Metrology Modelling to investigate level of aberrations introduced by thin film structure.introduced by thin film Solar Cells Reflectors Solar Cell Covers Security UV Protection Anti-static Gas Temperature Pressure

  2. Nanomechanical properties of hydrated organic thin films

    E-Print Network [OSTI]

    Choi, Jae Hyeok

    2007-01-01

    Hydrated organic thin films are biological or synthetic molecularly thin coatings which impart a particular functionality to an underlying substrate and which have discrete water molecules associated with them. Such films ...

  3. Thin film production method and apparatus

    DOE Patents [OSTI]

    Loutfy, Raouf O. (Tucson, AZ); Moravsky, Alexander P. (Tucson, AZ); Hassen, Charles N. (Tucson, AZ)

    2010-08-10

    A method for forming a thin film material which comprises depositing solid particles from a flowing suspension or aerosol onto a filter and next adhering the solid particles to a second substrate using an adhesive.

  4. Polycrystalline Thin-Film Multijunction Solar Cells

    SciTech Connect (OSTI)

    Noufi, R.; Wu, X.; Abu-Shama, J.; Ramanathan, K; Dhere, R.; Zhou, J.; Coutts, T.; Contreras, M.; Gessert, T.; Ward, J. S.

    2005-11-01

    We present a digest of our research on the thin-film material components that comprise the top and bottom cells of three different material systems and the tandem devices constructed from them.

  5. A thin film transistor driven microchannel device 

    E-Print Network [OSTI]

    Lee, Hyun Ho

    2005-02-17

    THIN FILM TRANSISTOR DRIVEN MICROCHANNEL DEVICE FOR PROTEIN AND DNA ELECTROPHORESIS A Dissertation by HYUN HO LEE Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements... for the degree of DOCTOR OF PHILOSOPHY December 2004 Major Subject: Chemical Engineering A THIN FILM TRANSISTOR DRIVEN MICROCHANNEL DEVICE FOR PROTEIN AND DNA ELECTROPHORESIS A Dissertation by HYUN HO LEE Submitted to Texas A...

  6. Nonisostructural complex oxide heteroepitaxy

    SciTech Connect (OSTI)

    Wong, Franklin J. Ramanathan, Shriram

    2014-07-01

    The authors present an overview of the fundamentals and representative examples of the growth of epitaxial complex oxide thin films on structurally dissimilar substrates. The authors will delineate how the details of particular crystal structures and symmetry of different oxide surfaces can be employed for a rational approach to the synthesis of nonisostructural epitaxial heterostructures. The concept of oxygen eutaxy can be widely applied. Materials combinations will be split into three categories, and in all cases the films and substrates occur in different crystal structures: (1) common translational and rotational symmetry between the film and substrate planes; (2) translational symmetry mismatch between the substrates and films that is distinct from a simple mismatch in lattice parameters; and (3) rotational symmetry mismatch. In case (1), in principle single-crystalline thin films can be attained despite the films and substrates possessing different crystal structures. In case (2), antiphase boundaries will be prevalent in the thin films. In case (3), thin-film rotational variants that are joined by tilt boundaries will be present. Diffraction techniques to determine crystallographic alignment and epitaxial variants are discussed, and transmission electron microscopy studies to investigate extended defects in the thin films will also be reviewed. The authors end with open problems in this field regarding the structure of oxide interfaces that can be topics for future research.

  7. Oxynitride Thin Film Barriers for PV Packaging

    SciTech Connect (OSTI)

    Glick, S. H.; delCueto, J. A.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2005-11-01

    Dielectric thin-film barrier and adhesion-promoting layers consisting of silicon oxynitride materials (SiOxNy, with various stoichiometry) were investigated. For process development, films were applied to glass (TCO, conductive SnO2:F; or soda-lime), polymer (PET, polyethylene terephthalate), aluminized soda-lime glass, or PV cell (a-Si, CIGS) substrates. Design strategy employed de-minimus hazard criteria to facilitate industrial adoption and reduce implementation costs for PV manufacturers or suppliers. A restricted process window was explored using dilute compressed gases (3% silane, 14% nitrous oxide, 23% oxygen) in nitrogen (or former mixtures, and 11.45% oxygen mix in helium and/or 99.999% helium dilution) with a worst-case flammable and non-corrosive hazard classification. Method employed low radio frequency (RF) power, less than or equal to 3 milliwatts per cm2, and low substrate temperatures, less than or equal to 100 deg C, over deposition areas less than or equal to 1000 cm2. Select material properties for barrier film thickness (profilometer), composition (XPS/FTIR), optical (refractive index, %T and %R), mechanical peel strength and WVTR barrier performance are presented.

  8. Layered Copper-Based Electrode for High-Dielectric Constant Oxide...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Copper-Based Electrode for High-Dielectric Constant Oxide Thin-Film-Based Devices Technology available for licenisng: A multilayer thin-film device containing copper layers...

  9. Emergent Phenomena at Oxide Interfaces

    SciTech Connect (OSTI)

    Hwang, H.Y.

    2012-02-16

    Transition metal oxides (TMOs) are an ideal arena for the study of electronic correlations because the s-electrons of the transition metal ions are removed and transferred to oxygen ions, and hence the strongly correlated d-electrons determine their physical properties such as electrical transport, magnetism, optical response, thermal conductivity, and superconductivity. These electron correlations prohibit the double occupancy of metal sites and induce a local entanglement of charge, spin, and orbital degrees of freedom. This gives rise to a variety of phenomena, e.g., Mott insulators, various charge/spin/orbital orderings, metal-insulator transitions, multiferroics, and superconductivity. In recent years, there has been a burst of activity to manipulate these phenomena, as well as create new ones, using oxide heterostructures. Most fundamental to understanding the physical properties of TMOs is the concept of symmetry of the order parameter. As Landau recognized, the essence of phase transitions is the change of the symmetry. For example, ferromagnetic ordering breaks the rotational symmetry in spin space, i.e., the ordered phase has lower symmetry than the Hamiltonian of the system. There are three most important symmetries to be considered here. (i) Spatial inversion (I), defined as r {yields} -r. In the case of an insulator, breaking this symmetry can lead to spontaneous electric polarization, i.e. ferroelectricity, or pyroelectricity once the point group belongs to polar group symmetry. (ii) Time-reversal symmetry (T) defined as t {yields} -t. In quantum mechanics, the time-evolution of the wave-function {Psi} is given by the phase factor e{sup -iEt/{h_bar}} with E being the energy, and hence time-reversal basically corresponds to taking the complex conjugate of the wave-function. Also the spin, which is induced by the 'spinning' of the particle, is reversed by time-reversal. Broken T-symmetry is most naturally associated with magnetism, since the spin operator changes sign with T-operation. (iii) Gauge symmetry (G), which is associated with a change in the phase of the wave-function as {Psi} {yields} e{sup i{theta}}{Psi}. Gauge symmetry is connected to the law of charge conservation, and broken G-symmetry corresponds to superconductivity/superfluidity. To summarize, the interplay among these electronic degrees of freedom produces various forms of symmetry breaking patterns of I, T, and G, leading to novel emergent phenomena, which can appear only by the collective behavior of electrons and cannot be expected from individual electrons. Figure 1 shows this schematically by means of several representative phenomena. From this viewpoint, the interfaces of TMOs offer a unique and important laboratory because I is already broken by the structure itself, and the detailed form of broken I-symmetry can often be designed. Also, two-dimensionality usually enhances the effects of electron correlations by reducing their kinetic energy. These two features of oxide interfaces produce many novel effects and functions that cannot be attained in bulk form. Given that the electromagnetic responses are a major source of the physical properties of solids, and new gauge structures often appear in correlated electronic systems, we put 'emergent electromagnetism' at the center of Fig. 1.

  10. Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics

    E-Print Network [OSTI]

    Chung, Choong-Heui

    2012-01-01

    CuIn(Se,S) 2 thin film solar cells: secondary phaseChalcopyrite Thin Film Solar Cells: Materials Chemistry,Chalcopyrite Thin Film Solar Cells: Materials Chemistry,

  11. Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

    DOE Patents [OSTI]

    Brinker, Charles Jeffrey (Albuquerque, NM); Prakash, Sai Sivasankaran (Minneapolis, MN)

    1999-01-01

    A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

  12. Thin film solar cell including a spatially modulated intrinsic layer

    DOE Patents [OSTI]

    Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

    1989-03-28

    One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

  13. Method of forming particulate materials for thin-film solar cells

    DOE Patents [OSTI]

    Eberspacher, Chris; Pauls, Karen Lea

    2004-11-23

    A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

  14. The interplay between spatially separated ferromagnetic and superconducting thin films 

    E-Print Network [OSTI]

    Sullivan, Isaac John

    2013-02-22

    characterized. 26 CHAPTER III THE SC/FM THIN FILM MULTILAYER The fabrication and characterization of the SC/FM film couples comprised the most de- manding and arduous work during the tenure of my thesis project. Many special parts were designed... EXPERIMENTAL DETAILS A. Ferromagnetic Thin Films 1. Film Preparation 2. Film Characterization B. Superconducting Thin Films 1. Film Preparation III THE SC/FM THIN FILM MULTILAYER . A. SC/FM Thin Film Multilayer Preparation B. SC/FM Thin Film Multilayer...

  15. Thin film absorber for a solar collector

    DOE Patents [OSTI]

    Wilhelm, William G. (Cutchogue, NY)

    1985-01-01

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  16. Thin film cadmium telluride and zinc phosphide solar cells

    SciTech Connect (OSTI)

    Chu, T.

    1984-10-01

    This report describes research performed from June 1982 to October 1983 on the deposition of cadmium telluride films by direct combination of the cadmium and tellurium vapor on foreign substrates. Nearly stoichiometric p-type cadmium telluride films and arsenic-doped p-type films have been prepared reproducibly. Major efforts were directed to the deposition and characterization of heterojunction window materials, indium tin oxide, fluorine-doped tin oxide, cadmium oxide, and zinc oxide. A number of heterojunction solar cells were prepared, and the best thin-film ITO/CdTe solar cells had an AMl efficiency of about 7.2%. Zinc phosphide films were deposited on W/steel substrates by the reaction of zinc and phosphine in a hydrogen flow. Films without intentional doping had an electrical resistivity on the order of 10/sup 6/ ohm-cm, and this resistivity may be reduced to about 5 x 10/sup 4/ ohm-cm by adding hydrogen chloride or hydrogen bromide to the reaction mixture. Lower resistivity films were deposited by adding a controlled amount of silver nitrate solution on to the substrate surface. Major efforts were directed to the deposition of low-resistivity zinc selenide in order to prepare ZnSe/An/sub 3/P/sub 2/ heterojunction thin-film solar cells. However, zinc selenide films deposited by vacuum evaporation and chemical vapor deposition techniques were all of high resistivity.

  17. Thin film superconductors and process for making same

    DOE Patents [OSTI]

    Nigrey, P.J.

    1988-01-21

    A process for the preparation of oxide superconductors from high-viscosity non-aqueous solution is described. Solutions of lanthanide nitrates, alkaline earth nitrates and copper nitrates in a 1:2:3 stoichiometric ratio, when added to ethylene glycol containing citric acid solutions, have been used to prepare highly viscous non-aqueous solutions of metal mixed nitrates-citrates. Thin films of these compositions are produced when a layer of the viscous solution is formed on a substrate and subjected to thermal decomposition.

  18. Thin film dielectric composite materials

    SciTech Connect (OSTI)

    Jia, Quanxi; Gibbons, Brady J.; Findikoglu, Alp T.; Park, Bae Ho

    2002-01-01

    A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

  19. Tungsten-doped thin film materials

    DOE Patents [OSTI]

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  20. Mesoscale morphologies in polymer thin films.

    SciTech Connect (OSTI)

    Ramanathan, M.; Darling, S. B. (Center for Nanoscale Materials)

    2011-06-01

    In the midst of an exciting era of polymer nanoscience, where the development of materials and understanding of properties at the nanoscale remain a major R&D endeavor, there are several exciting phenomena that have been reported at the mesoscale (approximately an order of magnitude larger than the nanoscale). In this review article, we focus on mesoscale morphologies in polymer thin films from the viewpoint of origination of structure formation, structure development and the interaction forces that govern these morphologies. Mesoscale morphologies, including dendrites, holes, spherulites, fractals and honeycomb structures have been observed in thin films of homopolymer, copolymer, blends and composites. Following a largely phenomenological level of description, we review the kinetic and thermodynamic aspects of mesostructure formation outlining some of the key mechanisms at play. We also discuss various strategies to direct, limit, or inhibit the appearance of mesostructures in polymer thin films as well as an outlook toward potential areas of growth in this field of research.

  1. Vibration welding system with thin film sensor

    DOE Patents [OSTI]

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  2. Meso-porous ?-Fe{sub 2}O{sub 3} thin films synthesized via the sol-gel process for light-driven water oxidation

    SciTech Connect (OSTI)

    Hamd, Wael; Laberty-Robert, Christel; Sanchez, Clement [Laboratoire de Chimie de la Matiere Condensee de Paris-UMR 7574, Universite Paris 6, College de France, 11 place Marcelin Berthelot 75005, Paris, (France); Cobo, Saioa; Fize, Jennifer; Artero, Vincent [Laboratoire de Chimie et Biologie des Metaux, Universite Grenoble 1, CNRS, CEA, 17 rue des Martyrs 38054, Grenoble Cedex 9, (France); Baldinozzi, Gianguido [SPMS, MFE, CNRS-Ecole Centrale Paris et CEA, DEN, DMN, 91191 Gif-sur-Yvette, (France); Schwartz, Wilfrid; Reymermier, Maryse; Pereira, Alexandre [CEA Institut Liten, DTNM/L2CE, 17 rue des Martyrs 38054, Grenoble Cedex 9, (France); Fontecave, Marc [Laboratoire de Chimie et Biologie des Metaux, Universite Grenoble 1, CNRS, CEA, 17 rue des Martyrs 38054, Grenoble Cedex 9, (France); SPMS, MFE, CNRS-Ecole Centrale Paris et CEA, DEN, DMN, 91191 Gif-sur-Yvette, (France)

    2012-07-01

    This work reports a facile and cost-effective method for synthesizing photoactive ?-Fe{sub 2}O{sub 3} films as well as their performances when used as photoanodes for water oxidation. Transparent ?-Fe{sub 2}O{sub 3} meso-porous films were fabricated by template-directed sol-gel chemistry coupled with the dip-coating approach, followed by annealing at various temperatures from 350 degrees C to 750 degrees C in air. ?-Fe{sub 2}O{sub 3} films were characterized by X-ray diffraction, XPS, FE-SEM and electrochemical measurements. The photoelectrochemical performance of ?-Fe{sub 2}O{sub 3} photoanodes was characterized and optimized through the deposition of Co-based co-catalysts via different methods (impregnation, electro-deposition and photo-electro-deposition). Interestingly, the resulting hematite films heat-treated at relatively low temperature (500 degrees C), and therefore devoid of any extrinsic dopant, achieve light-driven water oxidation under near-to-neutral (pH = 8) aqueous conditions after decoration with a Co catalyst. The onset potential is 0.75 V vs. the reversible hydrogen electrode (RHE), thus corresponding to 450 mV light-induced under potential, although modest photocurrent density values (40 ?Acm{sup -2}) are obtained below 1.23 V vs. RHE. These new materials with a very large interfacial area in contact with the electrolyte and allowing for a high loading of water oxidation catalysts open new avenues for the optimization of photo-electrochemical water splitting. (authors)

  3. Glass Transition Temperature in Polystyrene Supported Thin Films: a SPM-based Investigation of the Role of Molecular Entanglement

    E-Print Network [OSTI]

    Franco Dinelli; Tommaso Sgrilli; Andrea Ricci; Paolo Baschieri; Pasqualantonio Pingue; Manjunath Puttaswamy; Peter Kingshott

    2011-12-07

    The viscoelastic properties of thin polymeric films represent a central issue, especially for nanotechnological applications. In particular, it is highly relevant the dependence of viscoelasticity on the temperature. For polystyrene it is known that the glass transition temperature is dependent on the film thickness. At present, there is wide agreement on the importance of the two interfaces that the films form with the air and with the substrate. The relevance of molecular entanglement has been also stressed for the case of suspended films. However, the role of molecular entanglement on the glass transition temperature of supported films still remains elusive. In order to investigate the viscoelastic properties of thin films on the nanoscale, we have employed a scanning probe microscope suitably modified in order to monitor the indentation of a tip into a polymeric film during a given lapse of time with the application of a constant load. Thin polystyrene films have been prepared on a range of different substrates: native silicon oxide, hydrogen-terminated silicon and polystyrene brushes. In particular, we have considered polystyrene molecules with molecular weight values below and above the critical value for the occurrence of molecular entanglement. We find that, for samples where molecular entanglement can occur accompanied by a strong interaction with the substrate either by means of chemical bonds or physisorption, the glass transition temperature of thin films increases back to values comparable with those of thick films. This phenomenon is envisioned to be of great relevance in those cases where one needs to improve the adhesion and/or to control the viscoelastic properties of thin films.

  4. Conditioning effects on La1-xSrxMnO3-Yttria stabilized Zirconia electrodes for thin-film solid oxide fuel cells

    SciTech Connect (OSTI)

    Lee, You-Kee; Kim, Jung-Yeul; Lee, Young-Ki; Kim, Insoo; Moon, Hee-Soo; Park, Jong-Wan; Jacobson, Craig P.; Visco, Steven J.

    2002-12-06

    Composite cathodes of 50/50 vol percent LSM-YSZ (La1-xSrxMnO3-yttria stabilized zirconia) were deposited onto dense YSZ electrolytes by a colloidal deposition technique. The cathode characteristics were then examined by scanning electron microscopy (SEM) and studied by an impedance spectroscopy (IS). Conditioning effects of the LSM-YSZ cathodes were seen, and remedies for these effects were proposed for improving the performance of a solid oxide fuel cell (SOFC). LSM surface contamination and modification, cathode bonding to the YSZ electrolyte, changing Pt electrode and bonding paste, and curvature of sintered YSZ electrolytes led to some changes in microstructure and variability in cell performances.

  5. EVOLUTION AND REGULARITY RESULTS FOR EPITAXIALLY STRAINED THIN FILMS AND MATERIAL VOIDS

    E-Print Network [OSTI]

    Segatti, Antonio

    EVOLUTION AND REGULARITY RESULTS FOR EPITAXIALLY STRAINED THIN FILMS AND MATERIAL VOIDS PAOLO PIOVANO Abstract. We consider free boundary problems that model the evolution of interfaces, and the surface energy, which has a stabilizing effect. First, we introduce the evolution equation with curvature

  6. Polymer surface and thin film vibrational dynamics of poly,,methyl methacrylate..., polybutadiene,

    E-Print Network [OSTI]

    Sibener, Steven

    Polymer surface and thin film vibrational dynamics of poly,,methyl methacrylate..., polybutadiene atom scattering has been used to investigate the vibrational dynamics at the polymer vacuum interface polymers. The broad multiphonon feature that arises in the inelastic scattering spectra at surface

  7. Femtosecond laser ablation-based mass spectrometry. An ideal tool for stoichiometric analysis of thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    LaHaye, Nicole L.; Kurian, Jose; Diwakar, Prasoon K.; Alff, Lambert; Harilal, Sivanandan S.

    2015-08-19

    An accurate and routinely available method for stoichiometric analysis of thin films is a desideratum of modern materials science where a material’s properties depend sensitively on elemental composition. We thoroughly investigated femtosecond laser ablation-inductively coupled plasma-mass spectrometry (fs-LA-ICP-MS) as an analytical technique for determination of the stoichiometry of thin films down to the nanometer scale. The use of femtosecond laser ablation allows for precise removal of material with high spatial and depth resolution that can be coupled to an ICP-MS to obtain elemental and isotopic information. We used molecular beam epitaxy-grown thin films of LaPd(x)Sb2 and T´-La2CuO4 to demonstrate themore »capacity of fs-LA-ICP-MS for stoichiometric analysis and the spatial and depth resolution of the technique. Here we demonstrate that the stoichiometric information of thin films with a thickness of ~10 nm or lower can be determined. Furthermore, our results indicate that fs-LA-ICP-MS provides precise information on the thin film-substrate interface and is able to detect the interdiffusion of cations.« less

  8. Piezoreslstive graphite/polyimide thin films for micromachining applications

    E-Print Network [OSTI]

    Piezoreslstive graphite/polyimide thin films for micromachining applications A. Bruno Frazier) In this work, graphite/polyimide composite thin films are introduced and characterized for micromachining tetracarboxylic dianhydride+xydianiline/metaphenylene diamine polyimide matrix. The resultant material represents

  9. Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization

    E-Print Network [OSTI]

    Bielecki, Anthony

    2013-01-01

    film solar cells. CIGS solar cell efficiencies have beenCIGS, making it a favorable choice for thin-film solar cells.thin film solar cell [3]. However, use of CIGS has a number

  10. Polymer-Metal Nanocomposites via Polymer Thin Film

    E-Print Network [OSTI]

    Shyamasundar, R.K.

    Polymer-Metal Nanocomposites via Polymer Thin Film T. P. Radhakrishnan School of Chemistry, University of Hyderabad Polymer-metal nanocomposite thin films are versatile materials that not only Chemistry Inside a Polymer Thin Film P. Radhakrishnan School of Chemistry, University of Hyderabad metal

  11. Environmental Aspects of Thin Film Module Production and Product Lifetime

    E-Print Network [OSTI]

    Bergman, Keren

    Impact #12;3 Thin-Film PV -The Triangle of SuccessThin-Film PV -The Triangle of Success Low Cost of Thin Film Module Production and Product Lifetime Vasilis Fthenakis PV Environmental Research Center@bnl.gov web: www.pv.bnl.gov www.clca.columbia.edu #12;2 PV Sustainability CriteriaPV Sustainability Criteria

  12. Ag Adsorption on Various Silica Thin Films Y. D. Kim, T. Wei, S. Wendt, and D. W. Goodman*

    E-Print Network [OSTI]

    Goodman, Wayne

    ,three-dimensionalmetalgrowthtypicallyoccurs. Defects sites, however, can lead to a much stronger interaction between the oxide and the metal,7 of metals with oxides is central to various technologies such as heterogeneous catalysts, electronic devices of many oxides. Such difficulties can be circumvented with the use of thin films of the oxide, films

  13. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    Solar Energy Materials and Solar Cells, 86:207–216, 2005. [silicon thin films and solar cells. Journal of Appliedtrapping in nanostructured solar cells. ACS Nano, 5:10055–

  14. Flexoelectricity in barium strontium titanate thin film

    SciTech Connect (OSTI)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning, E-mail: xjiang5@ncsu.edu [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Shu, Longlong [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Electronic Materials Research Laboratory, International Center for Dielectric Research, Xi'an Jiao Tong University, Xi'an, Shaanxi 710049 (China); Maria, Jon-Paul [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130?nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5??C/m at Curie temperature (?28?°C) and 17.44??C/m at 41?°C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100??C/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  15. ORIGINAL PAPER Nanocrystalline Diamond Thin Films Synthesis

    E-Print Network [OSTI]

    Qin, Qinghua

    -CVD, and Meng [13] prepared NCD thin film on cemented carbide using a high extended DC arc plasma process substrate using direct current plasma jet chemical vapor deposition. A special cooling system was designed of Physics, Australian National University, Canberra, ACT 0200, Australia 123 Plasma Chem Plasma Process

  16. Magnetic/metallic thin films and nanostructures

    E-Print Network [OSTI]

    Lewis, Robert Michael

    examples. During the past decade applications of nano-scale magnetic devices to data storage have hadMagnetic/metallic thin films and nanostructures The College of William and MarY;'l Virginia http://www.as.wm.cdu/Faculty/Lukaszcw.html It is widely believed that revolutionary progress can be made as materials and devices are developed to operate

  17. Influence of sputtering power on the optical properties of ITO thin films

    SciTech Connect (OSTI)

    K, Aijo John; M, Deepak, E-mail: manju.thankamoni@gmail.com; T, Manju, E-mail: manju.thankamoni@gmail.com [Department of Physics, Sree Sankara College, Kalady P. O., Ernakulam Dist., Kerala (India); Kumar, Vineetha V. [Dept. of Physics, K. E. College, Mannanam, Kottayam Dist., Kerala (India)

    2014-10-15

    Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

  18. Evaporation system and method for gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, Jerome J. (New Haven, CT); Halpern, Bret L. (Bethany, CT)

    1994-01-01

    A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.

  19. Silicon Oxynitride Thin Film Barriers for PV Packaging (Poster)

    SciTech Connect (OSTI)

    del Cueto, J. A.; Glick, S. H.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2006-10-03

    Dielectric, adhesion-promoting, moisture barriers comprised of silicon oxynitride thin film materials (SiOxNy with various material stoichiometric compositions x,y) were applied to: 1) bare and pre-coated soda-lime silicate glass (coated with transparent conductive oxide SnO2:F and/or aluminum), and polymer substrates (polyethylene terephthalate, PET, or polyethylene napthalate, PEN); plus 2) pre- deposited photovoltaic (PV) cells and mini-modules consisting of amorphous silicon (a-Si) and copper indium gallium diselenide (CIGS) thin-film PV technologies. We used plasma enhanced chemical vapor deposition (PECVD) process with dilute silane, nitrogen, and nitrous oxide/oxygen gas mixtures in a low-power (< or = 10 milliW per cm2) RF discharge at ~ 0.2 Torr pressure, and low substrate temperatures < or = 100(degrees)C, over deposition areas ~ 1000 cm2. Barrier properties of the resulting PV cells and coated-glass packaging structures were studied with subsequent stressing in damp-heat exposure at 85(degrees)C/85% RH. Preliminary results on PV cells and coated glass indicate the palpable benefits of the barriers in mitigating moisture intrusion and degradation of the underlying structures using SiOxNy coatings with thicknesses in the range of 100-200 nm.

  20. Sputter deposition for multi-component thin films

    DOE Patents [OSTI]

    Krauss, A.R.; Auciello, O.

    1990-05-08

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

  1. Sputter deposition for multi-component thin films

    DOE Patents [OSTI]

    Krauss, Alan R. (Plainfield, IL); Auciello, Orlando (Cary, NC)

    1990-01-01

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

  2. Nanostructured SrTiO3/WO3 Heterojunction Thin Films for Efficient Photoelectrochemical Water

    E-Print Network [OSTI]

    Ehrman, Sheryl H.

    Nanostructured SrTiO3/WO3 Heterojunction Thin Films for Efficient Photoelectrochemical Water transfer and separation of photogenerated charge carriers. Introduction #12;Why SrTiO3 and WO3 Tungsten Oxide (WO3) [Eg :- ~ 2.7 eV] Advantages: Basically n-type in nature due to presence of oxygen vacancies

  3. Doping in Zinc Oxide Thin Films

    E-Print Network [OSTI]

    Yang, Zheng

    2009-01-01

    = 5.8x10 (cm ) Magnetic Field (Telsa) Sl op e (c) August 19,20 ? A Magnetic Field (Telsa) T = 300 K Oh m T n = 6.25x10 /= 2.7x10 (cm ) Magnetic Field (Telsa) Magnetic Field (Telsa)

  4. Doping in Zinc Oxide Thin Films

    E-Print Network [OSTI]

    Yang, Zheng

    2009-01-01

    in optoelectronics and spintronics. 1-4 ZnO has a largedevices 6-8 and spintronics 9-11 and transparent conductingpotential applications in spintronics. 2-7 In the last two

  5. Doping in Zinc Oxide Thin Films

    E-Print Network [OSTI]

    Yang, Zheng

    2009-01-01

    for optoelectronic and spintronic applications. For example,for optoelectronic and spintronic applications. For example,

  6. Doping in Zinc Oxide Thin Films

    E-Print Network [OSTI]

    Yang, Zheng

    2009-01-01

    increased atomic oxygen) density from enhanced plasma power.of plasma power because of the increased atomic oxygenof plasma power because of the increased atomic oxygen

  7. Doping in Zinc Oxide Thin Films

    E-Print Network [OSTI]

    Yang, Zheng

    2009-01-01

    for optoelectronic and spintronic applications. For example,for optoelectronic and spintronic applications. For example,in optoelectronics and spintronics. 1-4 ZnO has a large

  8. Thin film photovoltaic panel and method

    DOE Patents [OSTI]

    Ackerman, Bruce (El Paso, TX); Albright, Scot P. (El Paso, TX); Jordan, John F. (El Paso, TX)

    1991-06-11

    A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

  9. Electrostatic thin film chemical and biological sensor

    DOE Patents [OSTI]

    Prelas, Mark A. (Columbia, MO); Ghosh, Tushar K. (Columbia, MO); Tompson, Jr., Robert V. (Columbia, MO); Viswanath, Dabir (Columbia, MO); Loyalka, Sudarshan K. (Columbia, MO)

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  10. Preparation of thin film high temperature superconductors

    SciTech Connect (OSTI)

    VenKatesan, X.X.T.; Li, Q.; Findikoglu, A.; Hemmick, D. . Dept. of Physics); Wu, X.D. ); Inam, A.; Chang, C.C.; Ramesh, R.; Hwang, D.M.; Ravi, T.S.; Etemad, S.; Martinez, J.A.; Wilkens, B. )

    1991-03-01

    This paper addresses fundamental issues in preparing high quality high T{sub c} YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} thin films. The techniques of inverted cylindrical magnetron sputtering and pulsed laser deposition are chosen as successful examples to illustrate how the key problems can be solved. The fabrication of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}/PrBa{sub 2}Cu{sub 3}O{sub 7{minus}x} superlattices where superconductivity in a single unit cell layer of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} was observed demonstrates the state of the art of thin film deposition of high T{sub c} materials. Systematic variations of the deposition parameters result in changes of superconducting and structural properties of the films that correlate with their microwave and infrared characteristics.

  11. Superconducting thin films on potassium tantalate substrates

    DOE Patents [OSTI]

    Feenstra, Roeland (Oak Ridge, TN); Boatner, Lynn A. (Oak Ridge, TN)

    1992-01-01

    A superconductive system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

  12. Packaging material for thin film lithium batteries

    DOE Patents [OSTI]

    Bates, John B. (116 Baltimore Dr., Oak Ridge, TN 37830); Dudney, Nancy J. (11634 S. Monticello Rd., Knoxville, TN 37922); Weatherspoon, Kim A. (223 Wadsworth Pl., Oak Ridge, TN 37830)

    1996-01-01

    A thin film battery including components which are capable of reacting upon exposure to air and water vapor incorporates a packaging system which provides a barrier against the penetration of air and water vapor. The packaging system includes a protective sheath overlying and coating the battery components and can be comprised of an overlayer including metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-metal-ceramic combination.

  13. Characterization and control of non-stoichiometry in Pr?.?Ce?.?O?-[d?e?l?t?a?] thin films : correlation with SOFC electrode performance

    E-Print Network [OSTI]

    Chen, Di, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    While the properties of functional oxide thin films often depend strongly on oxygen nonstoichiometry (6), there have been few means available for its measurement and control in a reliable and in-situ fashion. In this work, ...

  14. PHOTOCATALYTIC GENERATION OF DISSOLVED OXYGEN AND OXYHEMOGLOBIN IN WHOLE BLOOD BASED ON THE INDIRECT INTERACTION OF UV LIGHT WITH A SEMICONDUCTING TITANIUM DIOXIDE THIN FILM

    SciTech Connect (OSTI)

    Gilbert, Richard J.; Carleton, Linda M.; Dasse, Kurt A.; Martin, Peter M.; Williford, Rick E.; Monzyk, Bruce F.

    2007-10-01

    Most current artificial lung technologies require the delivery of oxygen to the blood via permeable hollow fibers, depending on membrane diffusivity and differential partial pressure to drive gas exchange. We have identified an alternative approach in which dissolved oxygen (DO) is generated directly from the water content of blood through the indirect interaction of UV light with a semi-conducting titanium dioxide thin film. This reaction is promoted by photon absorption and displacement of electrons from the photoactive film, and yields a cascading displacement of electron “holes” to the aqueous interface resulting in the oxidation of water molecules to form DO. Anatase TiO2 (photocatalyst) and ITO (electrically conductive and light transparent) coatings were deposited onto quartz flow-cell plates by DC reactive magnetron sputtering. The crystal structure of the films was evaluated by grazing incidence X-Ray Diffraction (GIXRD), which confirmed that the primary crystal phase of the TiO2 thin film was anatase with a probable rutile secondary phase. Surface topology and roughness were determined by atomic force microscopy, demonstrating a stochastically uniform array of nanocrystallites. UV illumination of the titanium dioxide thin film through the quartz/ITO surface resulted in the rapid increase of DO and oxyhemoglobin in adjacent flowing blood on the opposite TiO2 surface at a rate of 1.28 x 10-5 mmol O2/sec. The rate of oxyhemoglobin generation was linearly proportional to residence time adjacent to the photoactive surface in a flow-through test cell under steady-state conditions. Preliminary biocompatibility for the proposed photocatalytic effect on whole blood demonstrated no increase in the rate of hemolysis or generation of toxic byproducts of photo-oxidation. These results demonstrate the feasibility and safety of employing optoelectronic mechanisms to promote oxygenation of hemoglobin in whole blood, and provide substantiation for the use of this technology as a mechanism for artificial respiratory support.

  15. Epitaxial growth of highly conductive RuO{sub 2} thin films on (100) Si

    SciTech Connect (OSTI)

    Jia, Q.X.; Song, S.G.; Wu, X.D.; Cho, J.H.; Foltyn, S.R.; Findikoglu, A.T.; Smith, J.L.

    1996-02-01

    Conductive RuO{sub 2} thin films have been heteroepitaxially grown by pulsed laser deposition on Si substrates with yttria-stabilized zirconia (YSZ) buffer layers. The RuO{sub 2} thin films deposited under optimized processing conditions are {ital a}-axis oriented normal to the Si substrate surface with a high degree of in-plane alignment with the major axes of the (100) Si substrate. Cross-sectional transmission electron microscopy analysis on the RuO{sub 2}/YSZ/Si multilayer shows an atomically sharp interface between the RuO{sub 2} and the YSZ. Electrical measurements show that the crystalline RuO{sub 2} thin films are metallic over a temperature range from 4.2 to 300 K and are highly conductive with a room-temperature resistivity of 37{plus_minus}2 {mu}{Omega}cm. The residual resistance ratio ({ital R}{sub 300K}/{ital R}{sub 4.2K}) above 5 for our RuO{sub 2} thin films is the highest ever reported for such films on Si substrates. {copyright} {ital 1996 American Institute of Physics.}

  16. Band Gap Energy of Chalcopyrite Thin Film Solar Cell Absorbers Determined by Soft X-Ray Emission and Absorption Spectroscopy

    E-Print Network [OSTI]

    Bar, M.

    2010-01-01

    OF CHALCOPYRITE THIN FILM SOLAR CELL ABSORBERS DETERMINED BYchalcopyrite thin film solar cell absorbers significantlyof chalcopyrite thin film solar cell absorbers. excitation

  17. Polarization of Bi{sub 2}Te{sub 3} thin film in a floating-gate capacitor structure

    SciTech Connect (OSTI)

    Yuan, Hui E-mail: qli6@gmu.edu; Li, Haitao; Zhu, Hao; Zhang, Kai; Baumgart, Helmut; Bonevich, John E.; Richter, Curt A.; Li, Qiliang E-mail: qli6@gmu.edu

    2014-12-08

    Metal-Oxide-Semiconductor (MOS) capacitors with Bi{sub 2}Te{sub 3} thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi{sub 2}Te{sub 3} thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33?eV for separating the electron and hole pairs in the bulk of Bi{sub 2}Te{sub 3}, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent endurance, and the complementary metal–oxide–semiconductor compatibility, the Bi{sub 2}Te{sub 3} embedded MOS structures are very interesting for memory application.

  18. Photovoltaic effect of lead-free (Na{sub 0.82}K{sub 0.18}){sub 0.5}Bi{sub 4.5}Ti{sub 4}O{sub 15} ferroelectric thin film using Pt and indium tin oxide top electrodes

    SciTech Connect (OSTI)

    Seok Woo, Won; Sik Won, Sung; Won Ahn, Chang; Chae, Song A; Won Kim, Ill, E-mail: kimiw@mail.ulsan.ac.kr [Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 680-749 (Korea, Republic of); Ullah, Aman [Department of Physics, University of Science and Technology, Bannu, Khyber Pakhtunkhwa (Pakistan)

    2014-01-21

    We have grown a Bi-layer structure (Na{sub 0.82}K{sub 0.18}){sub 0.5}Bi{sub 4.5}Ti{sub 4}O{sub 15} (NKBiT) ferroelectric thin film on Pt(111)/TiO{sub 2}/SiO{sub 2}/Si(100) substrate by using the chemical solution deposition method and deposited two kinds of thin Pt and indium tin oxide (ITO) top electrodes. The photovoltaic behaviors of Pt/NKBiT/Pt and ITO/NKBit/Pt capacitors were investigated over the wavelength range of 300–500?nm. When NKBiT thin film is illuminated by the corresponding wavelength of the film's energy band gap (E{sub g}), a photocurrent is generated due to the Schottky barrier between electrode and film, and an internal electric field is originated by the depolarization field. The maximum photocurrent density and power conversion efficiency of the ITO/NKBiT/Pt capacitor in the poled-up state are obtained as 45.75?nA/cm{sup 2} and 0.035%, respectively, at 352?nm. The photocurrent density and power conversion efficiency of the ITO/NKBiT/Pt capacitor increased to 3.5 times higher than that of the Pt/NKBiT/Pt capacitor.

  19. Overview and Challenges of Thin Film Solar Electric Technologies

    SciTech Connect (OSTI)

    Ullal, H. S.

    2008-12-01

    In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

  20. Channel cracks in atomic-layer and molecular-layer deposited multilayer thin film coatings

    SciTech Connect (OSTI)

    Long, Rong, E-mail: rlongmech@gmail.com [Department of Mechanical Engineering, University of Alberta, Edmonton, Alberta T6G 2G8 (Canada); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Dunn, Martin L. [Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Singapore University of Technology and Design, Singapore 138682 (Singapore)

    2014-06-21

    Metal oxide thin film coatings produced by atomic layer deposition have been shown to be an effective permeation barrier. The primary failure mode of such coatings under tensile loads is the propagation of channel cracks that penetrate vertically into the coating films. Recently, multi-layer structures that combine the metal oxide material with relatively soft polymeric layers produced by molecular layer deposition have been proposed to create composite thin films with desired properties, including potentially enhanced resistance to fracture. In this paper, we study the effects of layer geometry and material properties on the critical strain for channel crack propagation in the multi-layer composite films. Using finite element simulations and a thin-film fracture mechanics formalism, we show that if the fracture energy of the polymeric layer is lower than that of the metal oxide layer, the channel crack tends to penetrate through the entire composite film, and dividing the metal oxide and polymeric materials into thinner layers leads to a smaller critical strain. However, if the fracture energy of the polymeric material is high so that cracks only run through the metal oxide layers, more layers can result in a larger critical strain. For intermediate fracture energy of the polymer material, we developed a design map that identifies the optimal structure for given fracture energies and thicknesses of the metal oxide and polymeric layers. These results can facilitate the design of mechanically robust permeation barriers, an important component for the development of flexible electronics.

  1. Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization

    E-Print Network [OSTI]

    Bielecki, Anthony

    2013-01-01

    Research, Thin-Film Photovoltaic (PV) Cells Market Analysiscost of photovoltaic systems (such as solar cells) due tosolar cells are created by depositing layers of photovoltaic

  2. Rechargeable thin film battery and method for making the same

    DOE Patents [OSTI]

    Goldner, Ronald B.; Liu, Te-Yang; Goldner, Mark A.; Gerouki, Alexandra; Haas, Terry E.

    2006-01-03

    A rechargeable, stackable, thin film, solid-state lithium electrochemical cell, thin film lithium battery and method for making the same is disclosed. The cell and battery provide for a variety configurations, voltage and current capacities. An innovative low temperature ion beam assisted deposition method for fabricating thin film, solid-state anodes, cathodes and electrolytes is disclosed wherein a source of energetic ions and evaporants combine to form thin film cell components having preferred crystallinity, structure and orientation. The disclosed batteries are particularly useful as power sources for portable electronic devices and electric vehicle applications where high energy density, high reversible charge capacity, high discharge current and long battery lifetimes are required.

  3. Tax Credits Give Thin-Film Solar a Big Boost

    Office of Energy Efficiency and Renewable Energy (EERE)

    California company will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.

  4. Fast lithium-ion conducting thin film electrolytes integrated...

    Office of Scientific and Technical Information (OSTI)

    Fast lithium-ion conducting thin film electrolytes integrated directly on flexible substrates for high power solid-state batteries. Citation Details In-Document Search Title: Fast...

  5. Production and characterization of thin film group IIIB, IVB...

    Office of Scientific and Technical Information (OSTI)

    Production and characterization of thin film group IIIB, IVB and rare earth hydrides by reactive evaporation Citation Details In-Document Search Title: Production and...

  6. Orientational Analysis of Molecules in Thin Films | Stanford...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    crucial if an epitaxial or even crystalline organic growth is desired, if such thin film should serve as template or anchoring unit for further depositiongrowth in a...

  7. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    for further improvement on CZTS solar cells efficiency.improvement. Figure 6.1 Efficiency progress for hydrazine solution processing CIGS and CZTS thin film solar cells

  8. Graphene as tunable contact for high performance thin film transistor

    E-Print Network [OSTI]

    Liu, Yuan

    2015-01-01

    64 Figure 4-5. Air stability of a planar PCBM thin filmfilm. . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . .obtained by annealing 8-nm thick gold thin film. . . . .

  9. Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

    DOE Patents [OSTI]

    Ruffner, Judith A. (Albuquerque, NM); Bullington, Jeff A. (Albuquerque, NM); Clem, Paul G. (Albuquerque, NM); Warren, William L. (Albuquerque, NM); Brinker, C. Jeffrey (Albuquerque, NM); Tuttle, Bruce A. (Albuquerque, NM); Schwartz, Robert W. (Seneca, SC)

    1999-01-01

    A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.

  10. Fabrication of Microporous Thin Films from Polyelectrolyte Multilayers

    E-Print Network [OSTI]

    Barrett, Christopher

    , are established biomaterials finding application as drug delivery systems, enteric coatings for drugs, dental and biomaterial applications. Introduction The fabrication of polyelectrolyte multilayer thin films has received

  11. Thermoelectric effect in very thin film Pt/Au thermocouples

    E-Print Network [OSTI]

    Salvadori, M.C.; Vaz, A.R.; Teixeira, F.S.; Cattani, M.; Brown, I.G.

    2006-01-01

    TABLE I. Measured thermoelectric power S for samples ofThermoelectric effect in very thin film Pt/Au thermocouplesthickness dependence of the thermoelectric power of Pt films

  12. Long-laser-pulse method of producing thin films

    DOE Patents [OSTI]

    Balooch, Mehdi (Berkeley, CA); Olander, Donald K. (Berkeley, CA); Russo, Richard E. (Walnut Creek, CA)

    1991-01-01

    A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agen The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.

  13. Emergent Phenomena at Complex Oxide Interfaces

    E-Print Network [OSTI]

    Yu, Pu

    2011-01-01

    across the polar interfaces of ferroelectric het-films . . . . . . . . . . . . 3 Interface control of bulkdi?erent interfaces. . . . . . . . . . . . . . . . . . . . .

  14. Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

    DOE Patents [OSTI]

    Simpson, Lin Jay

    2013-12-17

    A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

  15. Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light-scattering substrate

    E-Print Network [OSTI]

    Psaltis, Demetri

    Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light://jap.aip.org/about/rights_and_permissions #12;Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light developed substrate that decouples the growth and scattering interfaces are investigated in n-i-p triple-junction

  16. Thin film seeds for melt processing textured superconductors for practical applications

    DOE Patents [OSTI]

    Veal, Boyd W. (Downers Grove, IL); Paulikas, Arvydas (Downers Grove, IL); Balachandran, Uthamalingam (Hinsdale, IL); Zhong, Wei (West Lafayette, IN)

    1999-01-01

    A method of fabricating bulk superconducting material such as RBa.sub.2 Cu.sub.3 O.sub.7-.delta. where R is La or Y comprising depositing a thin epitaxially oriented film of Nd or Sm (123) on an oxide substrate. The powder oxides of RBa.sub.2 Cu.sub.3 O.sub.7-.delta. or oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa.sub.2 Cu.sub.3 O.sub.7-.delta., where R is Y or La are heated, in physical contact with the thin film of Nd or Sm (123) on the oxide substrate to a temperature sufficient to form a liquid phase in the oxide or carbonate mixture while maintaining the thin film solid to grow a large single domain 123 superconducting material. Then the material is cooled. The thin film is between 200 .ANG. and 2000 .ANG.. A construction prepared by the method is also disclosed.

  17. Thin film seeds for melt processing textured superconductors for practical applications

    DOE Patents [OSTI]

    Veal, B.W.; Paulikas, A.; Balachandran, U.; Zhong, W.

    1999-02-09

    A method of fabricating bulk superconducting material such as RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} where R is La or Y comprising depositing a thin epitaxially oriented film of Nd or Sm (123) on an oxide substrate is disclosed. The powder oxides of RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} or oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}, where R is Y or La are heated, in physical contact with the thin film of Nd or Sm (123) on the oxide substrate to a temperature sufficient to form a liquid phase in the oxide or carbonate mixture while maintaining the thin film solid to grow a large single domain 123 superconducting material. Then the material is cooled. The thin film is between 200 {angstrom} and 2000 {angstrom}. A construction prepared by the method is also disclosed.

  18. Innovative Thin Films LLC | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View NewGuam:on Openei |sourceAndInformation ReeseInnovativeThin Films

  19. Tuning the Magnetic and Electronic Properties of FexSi1-x Thin Films for Spintronics

    E-Print Network [OSTI]

    Karel, Julie Elizabeth

    2012-01-01

    x Si 1-x Thin Films for Spintronics By Julie Elizabeth Karelx Si 1-x Thin Films for Spintronics Copyright 2012 by Juliex Si 1-x Thin Films for Spintronics by Julie Elizabeth Karel

  20. Quantification of thin film crystallographic orientation using X-ray diffraction with an area detector

    E-Print Network [OSTI]

    Baker, Jessica L

    2010-01-01

    properties of Au thin films by X?ray diffraction and in in  polythiophene thin?film transistors.  Nat Mater 2006, copper  phthalocyanine thin films evaporated on amorphous 

  1. The Effects of Non-Uniform Electronic Properties on Thin Film Photovoltaics

    E-Print Network [OSTI]

    Brown, Gregory Ferguson

    2011-01-01

    Intensity  in  Thin  Film  Solar  Cells   3.2.1   U.  Rau,  EL)  Intensity   in  Thin  Film  Solar  Cells   3.3  properties  of  thin  film  solar  cell   absorbers,  with  

  2. Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells

    E-Print Network [OSTI]

    Deceglie, Michael G.

    2014-01-01

    trapping in silicon thin film solar cells," Solar Energy,textured surfaces in thin-film solar cells," Opt. Express,Design of Plasmonic Thin-Film Solar Cells with Broadband

  3. Method of physical vapor deposition of metal oxides on semiconductors

    DOE Patents [OSTI]

    Norton, David P. (Knoxville, TN)

    2001-01-01

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  4. Rechargeable thin-film lithium batteries

    SciTech Connect (OSTI)

    Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

    1993-09-01

    Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

  5. VACUUM PUMPING STUDY OF TITANIUM-ZIRCONIUM-VANADIUM THIN FILMS*

    E-Print Network [OSTI]

    ERL 03-8 VACUUM PUMPING STUDY OF TITANIUM-ZIRCONIUM-VANADIUM THIN FILMS* Yulin Li# and Simon Ho, LEPP, Cornell University, Ithaca, NY 14853, USA Abstract* Vacuum pumping via non-evaporable getter (NEG) thin film deposited directly onto the interior of a vacuum chamber is a novel way to achieve extreme

  6. Multilayer thin-film coatings for optical communication systems

    E-Print Network [OSTI]

    Miller, David A. B.

    Multilayer thin-film coatings for optical communication systems Martina Gerken Lichttechnisches-film coatings for optical communication systems are reviewed. Particular emphasis is given to thin-film designs with dispersion related to the photonic crystal superprism effect. A single dispersive coating may be used

  7. A survey of thin-film solar photovoltaic industry & technologies

    E-Print Network [OSTI]

    Grama, Sorin

    2007-01-01

    A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

  8. Photochemical Pattern Transfer and Enhancement of Thin Film Silica

    E-Print Network [OSTI]

    Parikh, Atul N.

    Photochemical Pattern Transfer and Enhancement of Thin Film Silica Mesophases Andrew M. Dattelbaum chemical treatment of the film can selectively remove the mesostructured regions, leading to patterned, hydrophobicity, and structural morphology of the mesoscopic thin film material on a wide range of substrates

  9. Fracture patterns in thin films and multilayers Alex A. Volinsky

    E-Print Network [OSTI]

    Volinsky, Alex A.

    Fracture patterns in thin films and multilayers Alex A. Volinsky University of South Florida, excessive residual and externally applied stresses cause film fracture. In the case of tensile stress is the key for causing thin film fracture, either in tension, or compression, it is the influence

  10. Evolution of the In oxide/Si(lll) interface: Analysis by electron spectroscopies

    E-Print Network [OSTI]

    Shapira, Yoram

    , ranging from solar cells6'7 and optoelectronic devices' to thin-film sensors. High-quality TCO films have been studied on n-type GaAs and n-type InP,14-** but, to the best of our knowledge, not on Si, Austria (Received 29 November 1993; accepted for publication 6 April 1994) The growth of thin In oxide

  11. Fundamentals of polycrystalline thin film materials and devices

    SciTech Connect (OSTI)

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. (Delaware Univ., Newark, DE (USA). Inst. of Energy Conversion)

    1991-01-01

    This report presents the results of a one-year research program on polycrystalline thin-film solar cells. The research was conducted to better understand the limitations and potential of solar cells using CuInSe{sub 2} and CdTe by systematically investigating the fundamental relationships linking material processing, material properties, and device behavior. By selenizing Cu and In layers, we fabricated device-quality CuInSe{sub 2} thin films and demonstrated a CuInSe{sub 2} solar cell with 7% efficiency. We added Ga, to increase the band gap of CuInSe{sub 2} devices to increase the open-circuit voltage to 0.55 V. We fabricated and analyzed Cu(InGa)Se{sub 2}/CuInSe{sub 2} devices to demonstrate the potential for combining the benefits of higher V{sub oc} while retaining the current-generating capacity of CuInSe{sub 2}. We fabricated an innovative superstrate device design with more than 5% efficiency, as well as a bifacial spectral-response technique for determining the electron diffusion length and optical absorption coefficient of CuInSe{sub 2} in an operational cell. The diffusion length was found to be greater than 1 {mu}m. We qualitatively modeled the effect of reducing heat treatments in hydrogen and oxidizing treatments in air on the I-V behavior of CuInSe{sub 2} devices. We also investigated post-deposition heat treatments and chemical processing and used them to fabricate a 9.6%-efficient CdTe/CdS solar cell using physical vapor deposition.

  12. Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells

    E-Print Network [OSTI]

    Deceglie, Michael G.

    2014-01-01

    in ultrathin plasmonic solar cells," Optics Express, vol.Bailat, "Thin-film silicon solar cell technology," Progresstrapping in silicon thin film solar cells," Solar Energy,

  13. The Electrodeless Discharge Lamps Coated with the Titania Thin Film for Photocatalysis in a Microwave Field

    E-Print Network [OSTI]

    Cirkva, Vladimir

    The Electrodeless Discharge Lamps Coated with the Titania Thin Film for Photocatalysis assisted photocatalysis using TiO2 thin films has been examined. Several factors influencing

  14. Stress Evolution Behavior in CoCrPt Alloy Thin Films with varying Pt Concentration

    E-Print Network [OSTI]

    Im, M.-Y.

    2009-01-01

    Stress Evolution Behavior in CoCrPt Alloy Thin Films withmagnetic recording media is to investigate growth stress,since stress inevitably generated during thin film

  15. Highly conducting SrMoO{sub 3} thin films for microwave applications

    SciTech Connect (OSTI)

    Radetinac, Aldin Mani, Arzhang; Ziegler, Jürgen; Alff, Lambert; Komissinskiy, Philipp; Melnyk, Sergiy; Nikfalazar, Mohammad; Zheng, Yuliang; Jakoby, Rolf

    2014-09-15

    We have measured the microwave resistance of highly conducting perovskite oxide SrMoO{sub 3} thin film coplanar waveguides. The epitaxial SrMoO{sub 3} thin films were grown by pulsed laser deposition and showed low mosaicity and smooth surfaces with a root mean square roughness below 0.3?nm. Layer-by-layer growth could be achieved for film thicknesses up to 400?nm as monitored by reflection high-energy electron diffraction and confirmed by X-ray diffraction. We obtained a constant microwave resistivity of 29???·cm between 0.1 and 20?GHz by refining the frequency dependence of the transmission coefficients. Our result shows that SrMoO{sub 3} is a viable candidate as a highly conducting electrode material for all-oxide microwave electronic devices.

  16. The effect of substrate constraint on the martensitic transformation of Ni-Ti thin films

    SciTech Connect (OSTI)

    Mathews, S.A.; Wuttig, M.; Su, Q. [Univ. of Maryland, College Park, MD (United States). Dept. of Materials and Nuclear Engineering

    1996-09-01

    Previous work on an equiatomic alloy of nickel and titanium (nitinol) indicates that the martensitic transformation in thin films may be suppressed by interfacial constraint imposed by the substrate. Ni{sub 50}Ti{sub 50} films were deposited at room temperature on oxidized (100) Si substrates and tested to determine when the martensitic transformation occurred for both attached and free-standing conditions.

  17. Electrochemical preparation of poly(methylene blue)/graphene nanocomposite thin films

    SciTech Connect (OSTI)

    Erçar?kc?, Elif; Da?c?, Kader; Topçu, Ezgi; Alanyal?o?lu, Murat

    2014-07-01

    Highlights: • Poly(MB)/graphene thin films are prepared by a simple electrochemical approach. • Graphene layers in the film show a broad band in visible region of absorbance spectra. • Morphology of composite films indicates both disordered and ordered regions. • XRD reveals that nanocomposite films include rGO layers after electropolymerization process. • Chemically prepared graphene is better than electrochemically prepared graphene for electrooxidation of nitrite. - Abstract: Poly(methylene blue)/graphene nanocomposite thin films were prepared by electropolymerization of methylene blue in the presence of graphene which have been synthesized by two different methods of a chemical oxidation process and an electrochemical approach. Synthesized nanocomposite thin films were characterized by using cyclic voltammetry, UV–vis. absorption spectroscopy, powder X-ray diffraction, and scanning tunneling microscopy techniques. Electrocatalytical properties of prepared poly(methylene blue)/graphene nanocomposite films were compared toward electrochemical oxidation of nitrite. Under optimized conditions, electrocatalytical effect of nanocomposite films of chemically prepared graphene through electrochemical oxidation of nitrite was better than that of electrochemically prepared graphene.

  18. Reactive MD Simulations of Electrochemical Oxide Interfaces at...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    National Laboratory Reactive MD Simulations of Electrochemical Oxide Interfaces at Mesoscale PI Name: Subramanian Sankaranarayanan PI Email: skrssank@anl.gov Institution:...

  19. TEM characterization of nanodiamond thin films.

    SciTech Connect (OSTI)

    Qin, L.-C.; Zhou, D.; Krauss, A. R.; Gruen, D. M.; Chemistry

    1998-05-01

    The microstructure of thin films grown by microwave plasma-enhanced chemical vapor deposition (MPCVD) from fullerene C{sub 60} precursors has been characterized by scanning electron microscopy (SEM), selected-area electron diffraction (SAED), bright-field electron microscopy, high-resolution electron microscopy (HREM), and parallel electron energy loss spectroscopy (PEELS). The films are composed of nanosize crystallites of diamond, and no graphitic or amorphous phases were observed. The diamond crystallite size measured from lattice images shows that most grains range between 3-5 nm, reflecting a gamma distribution. SAED gave no evidence of either sp2-bonded glassy carbon or sp3-bonded diamondlike amorphous carbon. The sp2-bonded configuration found in PEELS was attributed to grain boundary carbon atoms, which constitute 5-10% of the total. Occasionally observed larger diamond grains tend to be highly faulted.

  20. Thin Film Femtosecond Laser Damage Competition

    SciTech Connect (OSTI)

    Stolz, C J; Ristau, D; Turowski, M; Blaschke, H

    2009-11-14

    In order to determine the current status of thin film laser resistance within the private, academic, and government sectors, a damage competition was started at the 2008 Boulder Damage Symposium. This damage competition allows a direct comparison of the current state of the art of high laser resistance coatings since they are tested using the same damage test setup and the same protocol. In 2009 a high reflector coating was selected at a wavelength of 786 nm at normal incidence at a pulse length of 180 femtoseconds. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials and layer count, and spectral results will also be shared.

  1. Glow discharge plasma deposition of thin films

    DOE Patents [OSTI]

    Weakliem, Herbert A. (Pennington, NJ); Vossen, Jr., John L. (Bridgewater, NJ)

    1984-05-29

    A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

  2. Thin films of mixed metal compounds

    DOE Patents [OSTI]

    Mickelsen, R.A.; Chen, W.S.

    1985-06-11

    Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

  3. Rechargeable thin-film electrochemical generator

    DOE Patents [OSTI]

    Rouillard, Roger (Beloeil, CA); Domroese, Michael K. (South St. Paul, MN); Hoffman, Joseph A. (Minneapolis, MN); Lindeman, David D. (Hudson, WI); Noel, Joseph-Robert-Gaetan (St-Hubert, CA); Radewald, Vern E. (Austin, TX); Ranger, Michel (Lachine, CA); Sudano, Anthony (Laval, CA); Trice, Jennifer L. (Eagan, MN); Turgeon, Thomas A. (Fridley, MN)

    2000-09-15

    An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

  4. Strain Induced Magnetism in SrRuO3 Epitaxial Thin Films

    SciTech Connect (OSTI)

    Grutter, A.; Wong, F.; Arenholz, E.; Liberati, M.; Suzuki, Y.

    2010-01-10

    Epitaxial SrRuO{sub 3} thin films were grown on SrTiO{sub 3}, (LaAlO{sub 3}){sub 0.3}(SrAlO{sub 3}){sub 0.7} and LaAlO{sub 3} substrates inducing different biaxial compressive strains. Coherently strained SrRuO{sub 3} films exhibit enhanced magnetization compared to previously reported bulk and thin film values of 1.1-1.6 {micro}{sub B} per formula unit. A comparison of (001) and (110) SrRuO{sub 3} films on each substrate indicates that films on (110) oriented have consistently higher saturated moments than corresponding (001) films. These observations indicate the importance of lattice distortions in controlling the magnetic ground state in this transitional metal oxide.

  5. Metal/Diamond Composite Thin-Film Electrodes: New Carbon Supported Catalytic Electrodes

    SciTech Connect (OSTI)

    Greg M. Swain, PI

    2009-03-10

    The DOE-funded research conducted by the Swain group was focused on (i) understanding structure-function relationships at boron-doped diamond thin-film electrodes, (ii) understanding metal phase formation on diamond thin films and developing electrochemical approaches for producing highly dispersed electrocatalyst particles (e.g., Pt) of small nominal particle size, (iii) studying the electrochemical activity of the electrocatalytic electrodes for hydrogen oxidation and oxygen reduction and (iv) conducting the initial synthesis of high surface area diamond powders and evaluating their electrical and electrochemical properties when mixed with a Teflon binder. (Note: All potentials are reported versus Ag/AgCl (sat'd KCl) and cm{sup 2} refers to the electrode geometric area, unless otherwise stated).

  6. Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

    DOE Patents [OSTI]

    Simpson, Lin Jay

    2015-07-28

    Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metal at or proximate to the pin holes to block further permeation of contaminants through the pin holes.

  7. Flat panel display using Ti-Cr-Al-O thin film

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Schmid, Anthony P. (Solan Beach, CA)

    2002-01-01

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  8. Process for producing Ti-Cr-Al-O thin film resistors

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Schmid, Anthony P. (Solana Beach, CA)

    2001-01-01

    Thin films of Ti-Cr-Al-O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti-Cr-Al-O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti-Cr-Al-O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti-Cr-Al-O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  9. Biologically Inspired Synthesis Route to Three-Dimensionally Structured Inorganic Thin Films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Schwenzer, Birgit; Morse, Daniel E.

    2008-01-01

    Inorganic thin films (hydroxide, oxide, and phosphate materials) that are textured on a submicron scale have been prepared from aqueous metal salt solutions at room temperature using vapor-diffusion catalysis. This generic synthesis approach mimics the essential advantages of the catalytic and structure-directing mechanisms observed for the formation of silica skeletons of marine sponges. Chemical composition, crystallinity, and the three-dimensional morphology of films prepared by this method are extremely sensitive to changes in the synthesis conditions, such as concentrations, reaction times, and the presence and nature of substrate materials. Focusing on different materials systems, the reaction mechanism for the formation ofmore »these thin films and the influence of different reaction parameters on the product are explained.« less

  10. The state of the art of thin-film photovoltaics

    SciTech Connect (OSTI)

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

  11. STRESS-INDUCED PERIODIC FRACTURE PATTERNS IN THIN FILMS Alex A. Volinsky1

    E-Print Network [OSTI]

    Volinsky, Alex A.

    STRESS-INDUCED PERIODIC FRACTURE PATTERNS IN THIN FILMS Alex A. Volinsky1 , Neville R. Moody2 applied stresses in thin films can cause film fracture. In the case of compressive stress thin film stress a network of through- thickness cracks forms in thin films. Excessive biaxial residual stress

  12. Structural, magnetic, and electronic properties of GdTiO{sub 3} Mott insulator thin films grown by pulsed laser deposition

    SciTech Connect (OSTI)

    Grisolia, M. N.; Bruno, F. Y.; Sando, D.; Jacquet, E.; Barthélémy, A.; Bibes, M.; Zhao, H. J.; Chen, X. M.; Bellaiche, L.

    2014-10-27

    We report on the optimization process to synthesize epitaxial thin films of GdTiO{sub 3} on SrLaGaO{sub 4} substrates by pulsed laser deposition. Optimized films are free of impurity phases and are fully strained. They possess a magnetic Curie temperature T{sub C}?=?31.8?K with a saturation magnetization of 4.2??{sub B} per formula unit at 10?K. Transport measurements reveal an insulating response, as expected. Optical spectroscopy indicates a band gap of ?0.7?eV, comparable to the bulk value. Our work adds ferrimagnetic orthotitanates to the palette of perovskite materials for the design of emergent strongly correlated states at oxide interfaces using a versatile growth technique such as pulsed laser deposition.

  13. Ultrafast transient reflectance of epitaxial semiconducting perovskite thin films

    SciTech Connect (OSTI)

    Smolin, S. Y.; Guglietta, G. W.; Baxter, J. B. E-mail: smay@coe.drexel.edu; Scafetta, M. D.; May, S. J. E-mail: smay@coe.drexel.edu

    2014-07-14

    Ultrafast pump-probe transient reflectance (TR) spectroscopy was used to study carrier dynamics in an epitaxial perovskite oxide thin film of LaFeO{sub 3} (LFO) with a thickness of 40 unit cells (16?nm) grown by molecular beam epitaxy on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT). TR spectroscopy shows two negative transients in reflectance with local maxima at ?2.5?eV and ?3.5?eV which correspond to two optical transitions in LFO as determined by ellipsometry. The kinetics at these transients were best fit with an exponential decay model with fast (5–40 ps), medium (?200 ps), and slow (??3?ns) components that we attribute mainly to recombination of photoexcited carriers. Moreover, these reflectance transients did not completely decay within the observable time window, indicating that ?10% of photoexcited carriers exist for at least 3?ns. This work illustrates that TR spectroscopy can be performed on thin (<20?nm) epitaxial oxide films to provide a quantitative understanding of recombination lifetimes, which are important parameters for the potential utilization of perovskite films in photovoltaic and photocatalytic applications.

  14. Microstructure and magnetic properties of FeCo epitaxial thin films grown on MgO single-crystal substrates

    SciTech Connect (OSTI)

    Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-04-01

    FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe{sub 50}Co{sub 50} alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal.

  15. Cross-sectional electrostatic force microscopy of thin-film solar cells

    SciTech Connect (OSTI)

    Ballif, C.; Moutinho, H. R.; Al-Jassim, M. M.

    2001-01-15

    In a recent work, we showed that atomic force microscopy (AFM) is a powerful technique to image cross sections of polycrystalline thin films. In this work, we apply a modification of AFM, namely, electrostatic force microscopy (EFM), to investigate the electronic properties of cleaved II--VI and multijunction thin-film solar cells. We cleave the devices in such a way that they are still working with their nominal photovoltaic efficiencies and can be polarized for the measurements. This allows us to differentiate between surface effects (work function and surface band bending) and bulk device properties. In the case of polycrystalline CdTe/CdS/SnO{sub 2}/glass solar cells, we find a drop of the EFM signal in the area of the CdTe/CdS interface ({+-}50 nm). This drop varies in amplitude and sign according to the applied external bias and is compatible with an n-CdS/p-CdTe heterojunction model, thereby invalidating the possibility of a deeply buried n-p CdTe homojunction. In the case of a triple-junction GaInP/GaAs/Ge device, we observe a variation of the EFM signal linked to both the material work-function differences and to the voltage bias applied to the cell. We attempt a qualitative explanation of the results and discuss the implications and difficulties of the EFM technique for the study of such thin-film devices.

  16. PEDOT:PSS emitters on multicrystalline silicon thin-film absorbers for hybrid solar cells

    SciTech Connect (OSTI)

    Junghanns, Marcus; Plentz, Jonathan Andrä, Gudrun; Gawlik, Annett; Höger, Ingmar; Falk, Fritz

    2015-02-23

    We fabricated an efficient hybrid solar cell by spin coating poly(3,4-ethylene-dioxythiophene):polystyrenesulfonate (PEDOT:PSS) on planar multicrystalline Si (mc-Si) thin films. The only 5??m thin Si absorber layers were prepared by diode laser crystallization of amorphous Si deposited by electron beam evaporation on glass. On these absorber layers, we studied the effect of SiO{sub x} and Al{sub 2}O{sub 3} terminated Si surfaces. The short circuit density and power conversion efficiency (PCE) of the mc-Si/Al{sub 2}O{sub 3}/PEDOT:PSS solar cell increase from 20.6 to 25.4?mA/cm{sup 2} and from 7.3% to 10.3%, respectively, as compared to the mc-Si/SiO{sub x}/PEDOT:PSS cell. Al{sub 2}O{sub 3} lowers the interface recombination and improves the adhesion of the polymer film on the hydrophobic mc-Si thin film. Open circuit voltages up to 604?mV were reached. This study demonstrates the highest PCE so far of a hybrid solar cell with a planar thin film Si absorber.

  17. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect (OSTI)

    Kova?evi?, Goran Pivac, Branko

    2014-01-28

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  18. Multimonth controlled small molecule release from biodegradable thin films

    E-Print Network [OSTI]

    Hammond, Paula T.

    Long-term, localized delivery of small molecules from a biodegradable thin film is challenging owing to their low molecular weight and poor charge density. Accomplishing highly extended controlled release can facilitate ...

  19. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    S. Guha, High-Efficiency Cu2ZnSnSe4 Solar Cells with a TiNfurther improvement on CZTS solar cells efficiency. Finally,Route to High-Efficiency CZTSSe Thin-film Solar Cells, Proc.

  20. Enabling integration of vapor-deposited polymer thin films

    E-Print Network [OSTI]

    Petruczok, Christy D. (Christy Danielle)

    2014-01-01

    Initiated Chemical Vapor Deposition (iCVD) is a versatile, one-step process for synthesizing conformal and functional polymer thin films on a variety of substrates. This thesis emphasizes the development of tools to further ...

  1. MICROSTRUCTURE AND MECHANICAL PROPERTIES OF ELECTROPLATED Cu THIN FILMS

    E-Print Network [OSTI]

    Volinsky, Alex A.

    MICROSTRUCTURE AND MECHANICAL PROPERTIES OF ELECTROPLATED Cu THIN FILMS A.A. Volinsky* , J. Vella microns were electroplated on top of the adhesion-promoting barrier layers on single crystal silicon

  2. The macroscopic delamination of thin films from elastic substrates

    E-Print Network [OSTI]

    Reis, Pedro Miguel

    The wrinkling and delamination of stiff thin films adhered to a polymer substrate have important applications in “flexible electronics.” The resulting periodic structures, when used for circuitry, have remarkable mechanical ...

  3. Guided Self-Assembly of Gold Thin Films

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of...

  4. Fluorination of amorphous thin-film materials with xenon fluoride

    DOE Patents [OSTI]

    Weil, R.B.

    1987-05-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  5. Initiated chemical vapor deposition of functional polyacrylic thin films

    E-Print Network [OSTI]

    Mao, Yu, 1975-

    2005-01-01

    Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

  6. Method for making surfactant-templated thin films

    DOE Patents [OSTI]

    Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (New Orleans, LA); Fan, Hong You (Albuquerque, NM)

    2010-08-31

    An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  7. Chemical vapor deposition of organosilicon and sacrificial polymer thin films

    E-Print Network [OSTI]

    Casserly, Thomas Bryan

    2005-01-01

    Chemical vapor deposition (CVD) produced films for a wide array of applications from a variety of organosilicon and organic precursors. The structure and properties of thin films were controlled by varying processing ...

  8. Direct printing of lead zirconate titanate thin films

    E-Print Network [OSTI]

    Bathurst, Stephen, 1980-

    2008-01-01

    Thus far, use of lead zirconate titanate (PZT) in MEMS has been limited due to the lack of process compatibility with existing MEMS manufacturing techniques. Direct printing of thin films eliminates the need for photolithographic ...

  9. Functionalized multilayer thin films for protection against acutely toxic agents

    E-Print Network [OSTI]

    Krogman, Kevin Christopher

    2009-01-01

    The recently developed practice of spraying polyelectrolyte solutions onto a substrate in order to construct thin films via the Layer-by-Layer (LbL) technique has been further investigated and extended. In this process a ...

  10. Optical and Structural Characterizations of Tin Phthalocvanine Thin Films

    SciTech Connect (OSTI)

    Cherian, Regimol C.; Menon, C. S. [School of Pure and Applied Physics, Mahatma Gandhi University Priyadarshini Hills P.O., Kottayam-686560, Kerala (India)

    2008-04-23

    Phthalocyanines are today regarded as optical materials, which applies to organic dye lasers. The analysis of the optical properties of these thin films enforces the application in the field of thin film optics. Tin phthalocyanine (SnPc) thin films used for the characterization studies are prepared by thermal evaporation technique. The variation of optical band gap with irradiation of heat radiation and post deposition heat treatment are studied from the absorption spectra. Structural properties have been analyzed using the X-ray diffractogram of SnPc powder and thin films. The structure is identified as monoclinic with a = 12.132 A, b = 8.712 A, c = 10.806 A and {beta} = 108.85 deg. The grain size increases with increase of annealing temperature. The SEM images show a rough corrugated surface. Due to heat treatment, crystallites grow into bigger size.

  11. Efficient light trapping structure in thin film silicon solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

  12. TiNi-based thin films for MEMS applications

    E-Print Network [OSTI]

    Fu, Yongqing

    In this paper, some critical issues and problems in the development of TiNi thin films were discussed, including preparation and characterization considerations, residual stress and adhesion, frequency improvement, fatigue ...

  13. Antimony-Doped Tin(II) Sulfide Thin Films

    E-Print Network [OSTI]

    Chakraborty, Rupak

    Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin ...

  14. June 26, 2000 1 Fracture in Thin Films

    E-Print Network [OSTI]

    Suo, Zhigang

    in many technologies. Examples include zirconia coatings as thermal barriers on superalloys in enginesJune 26, 2000 1 Fracture in Thin Films Z. Suo Mechanical and Aerospace Engineering Department

  15. Self-Assembling Process for Fabricating Tailored Thin Films

    ScienceCinema (OSTI)

    None

    2010-01-08

    A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

  16. Self-Assembling Process for Fabricating Tailored Thin Films

    ScienceCinema (OSTI)

    Sandia

    2009-09-01

    A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

  17. Modeling of thin-film solar thermoelectric generators

    E-Print Network [OSTI]

    Weinstein, Lee Adragon

    Recent advances in solar thermoelectric generator (STEG) performance have raised their prospect as a potential technology to convert solar energy into electricity. This paper presents an analysis of thin-film STEGs. ...

  18. Sol-gel-derived Epitaxial Nanocomposite Thin Films with Large...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sol-gel-derived Epitaxial Nanocomposite Thin Films with Large Sharp Magnetoelectric Effect Home Author: B. Liu, T. Sun, J. He, V. P. Dravid Year: 2010 Abstract: Nanostructures of...

  19. Wake and wave resistance on viscous thin films

    E-Print Network [OSTI]

    Ledesma-Alonso, René; Salez, Thomas; Raphaël, Elie

    2015-01-01

    The effect of an external pressure disturbance, being displaced with a constant speed along the free surface of a viscous thin film, is studied theoretically in the lubrication approximation in one- and two-dimensional geometries. In the comoving frame, the imposed pressure field creates a stationary deformation of the interface - a wake - that spatially vanishes in the far region. The shape of the wake and the way it vanishes depend on both the speed and size of the external source and the properties of the film. The wave resistance, namely the force that has to be externally furnished in order to maintain the wake, is analysed in details. For finite-size pressure disturbances, it increases with the speed, up to a certain transition value above which a monotonic decrease occurs. The role of the horizontal extent of the pressure field is studied as well, revealing that for a smaller disturbance the latter transition occurs at higher speed. Eventually, for a Dirac pressure source, the wave resistance either sa...

  20. Simple flash evaporator for making thin films of compounds

    SciTech Connect (OSTI)

    Hemanadhan, M.; Bapanayya, Ch.; Agarwal, S. C. [Department of Physics, Indian Institute of Technology, Kanpur 208016 (India)

    2010-07-15

    A simple and compact arrangement for flash evaporation is described. It uses a cell phone vibrator for powder dispensing that can be incorporated into a vacuum deposition chamber without any major alterations. The performance of the flash evaporation system is checked by making thin films of the optical memory chalcogenide glass Ge{sub 2}Sb{sub 2}Te{sub 5} (GST). Energy dispersive x-ray analysis shows that the flash evaporation preserves the stoichiometry in thin films.

  1. Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

    SciTech Connect (OSTI)

    Krishnaprasad, P. S. E-mail: mkj@cusat.ac.in; Jayaraj, M. K. E-mail: mkj@cusat.ac.in; Antony, Aldrin; Rojas, Fredy

    2015-03-28

    Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ?-2?, ?-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BST thin films show significantly improved tunable performance over polycrystalline thin films.

  2. Investigation of variation of energy of laser beam on structural, electrical and optical properties of pulsed laser deposited CuO thin films

    SciTech Connect (OSTI)

    Dahiya, V., E-mail: vinitadce@gmail.com; Kumar, A. [Department of Applied Physics, Delhi Technological University, Delhi (India); Kaur, G.; Mitra, A. [Department of Physics, Indian Institute of Technology Roorkee, Roorkee (India)

    2014-04-24

    In this paper, copper oxide (CuO) thin films have been deposited successfully by pulsed laser deposition technique using copper metal as target material. Thin films have been prepared under different energy of laser pulses ranging from 100mJ/pulse to 250 mJ/pulse. These films have been characterized for their structural, electrical and optical properties by using X-Ray Diffractometer (XRD), Four probe method and UV spectroscopy. Morphological and structural studies show that there is increase in crystallite size with the increase in energy of laser beam. Thus resulting in improved crystallinity and degree of orientation of the CuO thin films. Optoelectrical properties show direct relation between conductivity and energy of laser beam. Optical analysis of CuO thin films prepared under different energy of laser beam shows good agreement with structural analysis. The prepared CuO thin films show high absorbance in the UV and visible range and thus are suitable candidate for thin films solar cell application.

  3. Evaporation system and method for gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, J.J.; Halpern, B.L.

    1994-10-18

    A method and apparatus are disclosed for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases. 8 figs.

  4. Fabrication of Transparent Capacitive Structure by Self-Assembled Thin Films

    SciTech Connect (OSTI)

    Zhang, Q.; Shing, Y. J.; Hua, Feng; Saraf, Laxmikant V.; Matson, Dean W.

    2008-06-01

    An approach to fabricating transparent electronic devices by using nanomaterial and nanofabrication is presented in this paper. A see-through capacitor is constructed from selfassembled silica nanoparticle layers that are stacked on the transparent substrate. The electrodes are made of indium tin oxide. Unlike the traditional processes used to fabricate such devices, the self-assembly approach enables one to synthesize the thin film layers at lower temperature and cost, and with a broader availability of nanomaterials. The vertical dimension of the selfassembled thin films can be precisely controlled, as well as the molecular order in the thin film layers. The shape of the capacitor is generated by planar micropatterning. The quartz crystal demonstrates the steady growth of the silica nanoparticle multilayer. In addition, because the nanomaterial synthesis and the device fabrication steps are separate, the device is not affected by the harsh conditions required for the material synthesis. A clear pattern is allowed over a large area on the substrate. The prepared capacitive structure has an optical transparency higher than 92% over the visible spectrum. The capacitive impedance is measured at different frequencies and fit the theoretical results. As one of the fundamental components, this type of capacitive structure can serve in the transparent circuits, interactive media and sensors, as well as being applicable to other transparent devices.

  5. Surface smoothing effect of an amorphous thin film deposited by atomic layer deposition on a surface with nano-sized roughness

    SciTech Connect (OSTI)

    Lau, W. S. Wan, X.; Xu, Y.; Wong, H.; Zhang, J.; Luo, J. K.; Institute of Renewable Energy and Environment Technology, Bolton University, Deane Road, Bolton BL3 5 AB

    2014-02-15

    Previously, Lau (one of the authors) pointed out that the deposition of an amorphous thin film by atomic layer deposition (ALD) on a substrate with nano-sized roughness probably has a surface smoothing effect. In this letter, polycrystalline zinc oxide deposited by ALD onto a smooth substrate was used as a substrate with nano-sized roughness. Atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) were used to demonstrate that an amorphous aluminum oxide thin film deposited by ALD can reduce the surface roughness of a polycrystalline zinc oxide coated substrate.

  6. High-efficiency micro-energy generation based on free-carrier-modulated ZnO:N piezoelectric thin films

    SciTech Connect (OSTI)

    Lee, Eunju; Park, Jaedon; Yim, Munhyuk; Jeong, Sangbeom; Yoon, Giwan, E-mail: gwyoon@kaist.ac.kr [Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

    2014-05-26

    The free-carrier-modulated ZnO:N thin film-based flexible nanogenerators (NZTF-FNGs) are proposed and experimentally demonstrated. The suggested flexible nanogenerators (FNGs) are fabricated using N-doped ZnO thin films (NZTFs) as their piezoelectric active elements, which are deposited by a radio frequency magnetron sputtering technique with an N{sub 2}O reactive gas as an in situ dopant source. Considerable numbers of N atoms are uniformly incorporated into NZTFs overall during their growth, which would enable them to significantly compensate the unintentional background free electron carriers both in the bulk and at the surface of ZnO thin films (ZTFs). This N-doping approach is found to remarkably enhance the performance of NZTF-FNGs, which shows output voltages that are almost two orders of magnitude higher than those of the conventionally grown ZnO thin film-based FNGs. This is believed to be a result of both substantial screening effect suppression in the ZTF bulk and more reliable Schottky barrier formation at the ZTF interfaces, which is all mainly caused by the N-compensatory doping process. Furthermore, the NZTF-FNGs fabricated are verified via charging tests to be suitable for micro-energy harvesting devices.

  7. Buried anode lithium thin film battery and process for forming the same

    DOE Patents [OSTI]

    Lee, Se-Hee; Tracy, C. Edwin; Liu, Ping

    2004-10-19

    A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

  8. Conductive atomic force microscopy study of local electronic transport in ZnTe thin films

    SciTech Connect (OSTI)

    Kshirsagar, Sachin D.; Krishna, M. Ghanashyam; Tewari, Surya P.

    2013-02-05

    ZnTe thin films obtained by the electron beam evaporation technique were subjected to thermal annealing at 500 Degree-Sign C for 2 hours. The as deposited films were amorphous but transformed to the crystalline state under influence of the thermal treatment. There is increase in optical absorption due to the heat treatment caused by increase in free carrier concentration. Conductive atomic force microscopy shows the presence of electronic inhomogeneities in the films. This is attributed to local compositional variations in the films. I-V analysis in these systems indicates formation of Schottky junction at the metal semiconductor (M-S) interface.

  9. Chapter 1. Introduction to Thin Film Technologygy Thin films are deposited onto bulk materials (substrates) to achieveThin films are deposited onto bulk materials (substrates) to achieve

    E-Print Network [OSTI]

    Wang, Jianfang

    parts TiN coatings on cutting tools Offer hardness, low friction, and a chemical barrier to alloying on this system. #12;Thin films for multiple properties Cr coatings on automobile parts TiN coatings on cutting tools Impart hardness, metallic luster, and protection against ultraviolet light. Cr coatings on plastic

  10. Thin Film Packaging Solutions for High Efficiency OLED Lighting Products

    SciTech Connect (OSTI)

    None

    2008-06-30

    The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology was characterized as having less than 10% change in transmission during the 15,000 hour test period; (3) demonstrated thin film encapsulation of a phosphorescent OLED device with 1,500 hours of lifetime at 60 C and 80% RH; (4) demonstrated that a thin film laminate encapsulation, in addition to the direct thin film deposition process, of a polymer OLED device was another feasible packaging strategy for OLED lighting. The thin film laminate strategy was developed to mitigate defects, demonstrate roll-to-roll process capability for high volume throughput (reduce costs) and to support a potential commercial pathway that is less dependent upon integrated manufacturing since the laminate could be sold as a rolled good; (5) demonstrated that low cost 'blue' glass substrates could be coated with a siloxane barrier layer for planarization and ion-protection and used in the fabrication of a polymer OLED lighting device. This study further demonstrated that the substrate cost has potential for huge cost reductions from the white borosilicate glass substrate currently used by the OLED lighting industry; (6) delivered four-square feet of white phosphorescent OLED technology, including novel high efficiency devices with 82 CRI, greater than 50 lm/W efficiency, and more than 1,000 hours lifetime in a product concept model shelf; (7) presented and or published more than twenty internal studies (for private use), three external presentations (OLED workshop-for public use), and five technology-related external presentations (industry conferences-for public use); and (8) issued five patent applications, which are in various maturity stages at time of publication. Delivery of thin film encapsulated white phosphorescent OLED lighting technology remains a challenging technical achievement, and it seems that commercial availability of thin, bright, white OLED light that meets market requirements will continue to require research and development effort. However, there will be glass encapsulated white OLED lighting products commercialized in niche markets during the 2008 calendar year. This commercializ

  11. Thin-film absorber for a solar collector

    SciTech Connect (OSTI)

    Wilhelm, W.G.

    1982-02-09

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  12. Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

    SciTech Connect (OSTI)

    Ruffner, J.A.; Clem, P.G.; Tuttle, B.A. [and others

    1998-01-01

    Uncooled pyroelectric IR imaging systems, such as night vision goggles, offer important strategic advantages in battlefield scenarios and reconnaissance surveys. Until now, the current technology for fabricating these devices has been limited by low throughput and high cost which ultimately limit the availability of these sensor devices. We have developed and fabricated an alternative design for pyroelectric IR imaging sensors that utilizes a multilayered thin film deposition scheme to create a monolithic thin film imaging element on an active silicon substrate for the first time. This approach combines a thin film pyroelectric imaging element with a thermally insulating SiO{sub 2} aerogel thin film to produce a new type of uncooled IR sensor that offers significantly higher thermal, spatial, and temporal resolutions at a substantially lower cost per unit. This report describes the deposition, characterization and optimization of the aerogel thermal isolation layer and an appropriate pyroelectric imaging element. It also describes the overall integration of these components along with the appropriate planarization, etch stop, adhesion, electrode, and blacking agent thin film layers into a monolithic structure. 19 refs., 8 figs., 6 tabs.

  13. Ageing effect in spray pyrolysed B:SnO{sub 2} thin films for LPG sensing

    SciTech Connect (OSTI)

    Skariah, Benoy E-mail: dr.boben1@gmail.com; Thomas, Boben E-mail: dr.boben1@gmail.com

    2014-10-15

    For LPG sensing, boron doped (0.2 to 0.8 wt. %) polycrystalline tin oxide thin films are deposited by spray pyrolysis in the temperature range 325 - 430 °C. Sensor response of 56 % is achieved for 1000 ppm of LPG, at an operating temperature of 350 °C. The effects of ageing under ambient conditions on the sensor response are investigated for a storage period of six years. Ageing increases the film resistance but the gas response is lowered. XRD, SEM, FESEM, FTIR and XPS are utilized for structural, morphological and compositional charaterisations.

  14. Detection of saliva-range glucose concentrations using organic thin-film transistors

    SciTech Connect (OSTI)

    Elkington, D.; Belcher, W. J.; Dastoor, P. C.; Zhou, X. J.

    2014-07-28

    We describe the development of a glucose sensor through direct incorporation of an enzyme (glucose oxidase) into the gate of an organic thin film transistor (OTFT). We show that glucose diffusion is the key determinant of the device response time and present a mechanism of glucose sensing in these devices that involves protonic doping of the transistor channel via enzymatic oxidation of glucose. The integrated OTFT sensor is sensitive across 4 decades of glucose concentration; a range that encompasses both the blood and salivary glucose concentration levels. As such, this work acts as a proof-of-concept for low-cost printed biosensors for salivary glucose.

  15. Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

    DOE Patents [OSTI]

    Miller, Joel S. (Salt Lake City, UT); Pokhodnya, Kostyantyn I. (Salt Lake City, UT)

    2003-12-09

    A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

  16. Shape variation of micelles in polymer thin films

    SciTech Connect (OSTI)

    Zhou, Jiajia Shi, An-Chang

    2014-01-14

    The equilibrium properties of block copolymer micelles confined in polymer thin films are investigated using self-consistent field theory. The theory is based on a model system consisting of AB diblock copolymers and A homopolymers. Two different methods, based on the radius of gyration tensor and the spherical harmonics expansion, are used to characterize the micellar shape. The results reveal that the morphology of micelles in thin films depends on the thickness of the thin films and the selectivity of the confining surfaces. For spherical (cylindrical) micelles, the spherical (cylindrical) symmetry is broken by the presence of the one-dimensional confinement, whereas the top-down symmetry is broken by the selectivity of the confining surfaces. Morphological transitions from spherical or cylindrical micelles to cylinders or lamella are predicted when the film thickness approaches the micellar size.

  17. Properties of zirconia thin films deposited by laser ablation

    SciTech Connect (OSTI)

    Cancea, V. N.; Filipescu, M.; Colceag, D.; Dinescu, M.; Mustaciosu, C.

    2013-11-13

    Zirconia thin films have been deposited by laser ablation of a ceramic ZrO{sub 2} target in vacuum or in oxygen background at 0.01 mbar. The laser beam generated by an ArF laser (?=193 nm, ?=40 Hz) has been focalized on the target through a spherical lens at an incident angle of 45°. The laser fluence has been established to a value from 2.0 to 3.4 Jcm{sup ?2}. A silicon (100) substrate has been placed parallel to the target, at a distance of 4 cm, and subsequently has been heated to temperatures ranging between 300 °C and 600 °C. Thin films morphology has been characterized by atomic force microscopy and secondary ion mass spectrometry. Biocompatibility of these thin films has been assessed by studying the cell attachment of L929 mouse fibroblasts.

  18. Surface plasmon coupled emission studies on engineered thin film hybrids of nano ??Al{sub 2}O{sub 3} on silver

    SciTech Connect (OSTI)

    Mulpur, Pradyumna; Chunduri, Avinash; Rattan, Tanu Mimani; Kamisetti, Venkataramaniah [Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthi Nilayam, Andhra Pradesh, India 515134 (India); Lingam, Kiran; Rao, Apparao M. [Department of Physics and Astronomy, 202C Kinard Laboratory, Clemson University, Clemson, SC 29634 (United States)

    2014-01-28

    We report the first time engineering and fabrication of a novel thin film hybrid of nano ?-alumina doped in a polyvinyl alcohol (PVA) matrix along with rhodamine b (Rh.B) on a silver thin film. Silver films of 50 nm thickness on glass slides were fabricated by thermal evaporation. Nano ?-alumina was synthesized through the combustion route and characterized by XRD. The ?-alumina was dispersed in the PVA-Rh.B matrix by tip sonication. The resultant solution was spin coated on the Ag thin film at 3000 rpm to generate an overcoat of ?30 nm. We have designed and constructed an opto-mechanical setup for performing the SPCE studies. Excitation with a 532 nm continuous laser, led to the coupling of the energy of Rh.B emission to the surface plasmon modes of silver. The emission @ 580 nm was recorded using an Ocean Optics(copyright, serif) fiber optic spectrometer. Calculation of the ratio of signal intensity between the directional SPCE and isotropic fluorescence gives us the factor of signal enhancements which SPCE offers. We report an '8 fold' signal enhancement attributed to SPCE arising from the metal oxide doped thin film hybrid. We observed only a '5 fold' signal enhancement in the case of a thin film hybrid without ?-alumina. The emission was also 92% P-polarized which is in coherence with the theory of SPCE. The greater degree of signal enhancement observed in the ?-alumina doped thin film substrate can be attributed to the surface roughness which alumina offers to silver, which along with the porous nature of alumina enables a greater degree of adsorption of Rh.B which results in a higher emission intensity. Computational modeling was also performed, based on surface plasmon resonance (SPR) calculations to provide theoretical background to observed experimental data. The ?-alumina thin film hybrid can be extended as an economical sensing platform towards the high sensitive detection of analytes.

  19. Alignment of benzene thin films on self-assembled monolayers by surface templating Hanqiu Yuan, K.D. Gibson, Daniel R. Killelea 1

    E-Print Network [OSTI]

    Sibener, Steven

    Alignment of benzene thin films on self-assembled monolayers by surface templating Hanqiu Yuan, K Keywords: Self-assembled monolayers Benzene adsorption Surface templating Vapor-phase deposition of the initial interface. In particular, we have examined benzene growth on gold, alkanethiol and phenoxy

  20. Fabrication of polycrystalline thin films by pulsed laser processing

    DOE Patents [OSTI]

    Mitlitsky, Fred (Livermore, CA); Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Colella, Nicholas J. (Livermore, CA)

    1998-02-03

    A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

  1. Fabrication of polycrystalline thin films by pulsed laser processing

    DOE Patents [OSTI]

    Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

    1998-02-03

    A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

  2. Method of improving field emission characteristics of diamond thin films

    DOE Patents [OSTI]

    Krauss, Alan R. (Naperville, IL); Gruen, Dieter M. (Downer Grove, IL)

    1999-01-01

    A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

  3. Effect of current injection into thin-film Josephson junctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kogan, V. G.; Mints, R. G.

    2014-11-11

    New thin-film Josephson junctions have recently been tested in which the current injected into one of the junction banks governs Josephson phenomena. One thus can continuously manage the phase distribution at the junction by changing the injected current. Our method of calculating the distribution of injected currents is also proposed for a half-infinite thin-film strip with source-sink points at arbitrary positions at the film edges. The strip width W is assumed small relative to ?=2?2/d;? is the bulk London penetration depth of the film material and d is the film thickness.

  4. Large area quantitative analysis of nanostructured thin-films

    E-Print Network [OSTI]

    Sliz, Rafal; Eneh, Chibuzor; Suzuki, Yuji; Czajkowski, Jakub; Fabritius, Tapio; Kathirgamanathan, Poopathy; Nathan, Arokia; Myllyla, Risto; Jabbour, Ghassan

    2015-01-09

    of SEM images of quantum dots and InP nanostructured thin-films are provided in the supple- mentary information. 3 Results 3.1 Physical Characterization The AFM and XRD techniques were used to verify the sur- face morphology and provide the reference... research subject for their high applicability in optoelectronics22–24. In addi- tion, self-assembled gold quantum dots and InP-based nanos- tructures were examined. Prior to the analysis, ZnO fabricated thin-films were additionally characterized with AFM...

  5. Method of improving field emission characteristics of diamond thin films

    DOE Patents [OSTI]

    Krauss, A.R.; Gruen, D.M.

    1999-05-11

    A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.

  6. Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell

    E-Print Network [OSTI]

    Li, Tong; Jiang, Chun

    2010-01-01

    We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

  7. Generation of low work function, stable compound thin films by laser ablation

    DOE Patents [OSTI]

    Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

    2001-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  8. The development of a thin-film rollforming process for pharmaceutical continuous manufacturing

    E-Print Network [OSTI]

    Slaughter, Ryan (Ryan R.)

    2013-01-01

    In this thesis, a continuous rollforming process for the folding of thin-films was proposed and studied as a key step in the continuous manufacturing of pharmaceutical tablets. HPMC and PEG based polymeric thin-films were ...

  9. Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells

    E-Print Network [OSTI]

    Deceglie, Michael G.

    2014-01-01

    W. Prather, "Thin film solar cell design based on photonicH. A. Atwater, "Design of nanostructured solar cells usingBrongersma, "Design of Plasmonic Thin-Film Solar Cells with

  10. PID Failure of c-Si and Thin-Film Modules and Possible Correlation...

    Energy Savers [EERE]

    PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents...

  11. Cathodic ALD V2O5 thin films for high-rate electrochemical energy...

    Office of Scientific and Technical Information (OSTI)

    Cathodic ALD V2O5 thin films for high-rate electrochemical energy storage Citation Details In-Document Search Title: Cathodic ALD V2O5 thin films for high-rate electrochemical...

  12. Layer-by-Layer Assembly of Clay-filled Polymer Nanocomposite Thin Films 

    E-Print Network [OSTI]

    Jang, Woo-Sik

    2010-01-14

    robotic dipping system, for the preparation of these thin films, was built. The robot alternately dips a substrate into aqueous mixtures with rinsing and drying in between. Thin films of sodium montmorillonite clay and cationic polymer were grown...

  13. Characterization of Zirconium Phosphate/Polycation Thin Films Grown by Sequential Adsorption Reactions

    E-Print Network [OSTI]

    Characterization of Zirconium Phosphate/Polycation Thin Films Grown by Sequential Adsorption Received April 7, 1997X Monolayer and multilayer thin films consisting of anionic R-zirconium phosphate (R

  14. Engineering Al-based Thin Film Materials for Power Devices and Energy Storage Applications

    E-Print Network [OSTI]

    Perng, Ya-Chuan

    2012-01-01

    O Thin Films as a Solid Electrolyte for 3D Microbatteries,”Li 0.5 La 0.5 )TiO 3 solid electrolyte thin films grown byIonic conductivity in solid electrolytes based on lithium

  15. High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing

    E-Print Network [OSTI]

    Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

    2008-01-01

    One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

  16. Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)

    SciTech Connect (OSTI)

    Gessert, T. A.

    2010-09-01

    Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

  17. Thin film deposition behavior of lubricants as a function of temperature - Lubricant stability maps

    SciTech Connect (OSTI)

    Klaus, E.E.; Wang, J.C.; Duda, J.L. )

    1992-07-01

    The relative rates of evaporation and oxidative or thermal decomposition in lubricants are investigated experimentally at elevated temperatures. Thin films of lubricant are exposed to air at high temperatures, and attention is given to the amount of solid deposit rendered and the amount of evaporated material. The effects of volatility, oxidative stability, and thermal stability are assessed with the help of stability maps for liquid lubricants. The concept of fluid-stability maps based on deposit formation as a function of temperature is shown to be effective. At 200-425 C lubricant deposit formation in the presence of air is a function of lubricant volatility, oxidation rate, the rate of thermal degradation, and the effect of the bearing surface. Some materials are listed that can mitigate the effects of oxidation on lubricant performance which can be used for a range of aerospace applications. 16 refs.

  18. Dissolution dynamics of thin films measured by optical reflectance Christian Punckt and Ilhan A. Aksaya

    E-Print Network [OSTI]

    Aksay, Ilhan A.

    of copper thin films on gold substrates in a mild hydrochloric acid solution. Due to its simplicity, our of corrosion rates of thin films are in high demand for the quan- tification of material degradation measurement of dissolution rates of galvanically corrod- ing copper thin films based on bright field optical

  19. Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells

    E-Print Network [OSTI]

    Pulfrey, David L.

    Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells D.L. Pulfrey*, J. Dell): pulfrey@ece.ubc.ca ABSTRACT Cadmium telluride thin-film solar cells are now commercially available be attainable. 1. INTRODUCTION Thin film solar cells based on polycrystalline CdTe have been investigated

  20. EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS

    E-Print Network [OSTI]

    Ceder, Gerbrand

    materials for thin film solar cells such as CdTe and CIGS suffer from concerns over resource scarcity (eEARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS Yun Seog Lee 1 conversion efficiencies should be increased. In terms of reducing module cost, thin film solar cells

  1. DETERMINING OPTICAL CONSTANTS OF URANIUM NITRIDE THIN FILMS IN THE EXTREME

    E-Print Network [OSTI]

    Hart, Gus

    deposition and characterization of reactively-sputtered uranium nitride thin films. I also report opticalDETERMINING OPTICAL CONSTANTS OF URANIUM NITRIDE THIN FILMS IN THE EXTREME ULTRAVIOLET (1.6-35 NM.1 Application 1 1.2 Optical Constants 2 1.3 Project Focus 7 2 Uranium Nitride Thin Films 8 2.1 Sputtering 8 2

  2. Small-scale thin film experiments provide models for large-scale engineering applications

    E-Print Network [OSTI]

    Reis, Pedro Miguel

    Small-scale thin film experiments provide models for large-scale engineering applicationsMIT's Department of Civil and Environmental Engineering · http://cee.mit.edu Delamination occurs in a thin film blisters occur in a predictable manner. Photo / Donna Coveney, MIT PROBLEM Thin films are omnipresent

  3. Barium ferrite thin film media with perpendicular c-axis orientation and small grain size

    E-Print Network [OSTI]

    Laughlin, David E.

    Barium ferrite thin film media with perpendicular c-axis orientation and small grain size Zailong, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 Barium ferrite thin films with perpendicular c conditions. The c-axis orientation of barium ferrite thin films is most sensitive to the oxygen partial

  4. DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS-FILM SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

  5. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, III, Jerome J. (New Haven, CT); Halpern, Bret L. (Bethany, CT)

    1993-01-01

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

  6. Metal-black scattering centers to enhance light harvesting by thin-film solar cells

    E-Print Network [OSTI]

    Peale, Robert E.

    Metal-black scattering centers to enhance light harvesting by thin-film solar cells Deep Panjwania as scattering centers to increase the effective optical thickness of thin-film solar cells. The particular type. Gold-black was deposited on commercial thin-film solar cells using a thermal evaporator in nitrogen

  7. Predictive Modeling for Glass-Side Laser Scribing of Thin Film Photovoltaic Cells

    E-Print Network [OSTI]

    Yao, Y. Lawrence

    :F, CdTe, solar cell INTRODUCTION Thin-film solar cell is a promising technology to achieve substrates. Cadmium telluride (CdTe) is the dominant thin film solar cell material in recent years because manufacturing processes in the fabrication of thin film solar cells is monolithic cell isolation and series

  8. CARRIER COLLECTION IN THIN-FILM CDTE SOLAR CELLS: THEORY AND EXPERIMENT

    E-Print Network [OSTI]

    CARRIER COLLECTION IN THIN-FILM CDTE SOLAR CELLS: THEORY AND EXPERIMENT A.E. Delahoy, Z. Cheng different wavelengths. Keywords: CdTe, thin film solar cell, modeling 1 INTRODUCTION Traditional Si p, Jsc, is independent of voltage, i.e. superposition holds. Thin film CdTe solar cells deviate from

  9. Enhanced efficiency of thin film solar cells using a shifted dual grating plasmonic structure

    E-Print Network [OSTI]

    Levy, Uriel

    Enhanced efficiency of thin film solar cells using a shifted dual grating plasmonic structure Ronen, "Light absorption enhancement in thin-film solar cells using whispering gallery modes in dielectric in thin film solar cells," Appl. Phys. Lett. 99(13), 131114 (2011). 10. H. R. Stuart and D. G. Hall

  10. Light trapping in thin-film solar cells with randomly rough and hybrid

    E-Print Network [OSTI]

    Light trapping in thin-film solar cells with randomly rough and hybrid textures Piotr Kowalczewski. M. Smets, and M. Zeman, "Plasmonic light trapping in thin-film silicon solar cells with improved Lambertian limits in thin film silicon solar cells with 1D and 2D periodic patterns," Opt. Express 20, A224­A

  11. LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle

    E-Print Network [OSTI]

    Sites, James R.

    LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle Physics response map, was developed and used to map defects in thin-film solar cells [4]. Improvements to the two) measurements are providing a direct link between the spatial non-uniformities inherent in thin-film

  12. LOSS ANALYSIS OF BACK-CONTACT BACK-JUNCTION THIN-FILM MONOCRYSTALLINE SILICON SOLAR CELLS

    E-Print Network [OSTI]

    LOSS ANALYSIS OF BACK-CONTACT BACK-JUNCTION THIN-FILM MONOCRYSTALLINE SILICON SOLAR CELLS F. Haase losses in back-contact back- junction monocrystalline thin-film silicon solar cells. The cells are made for back-contact back- junction (BC BJ) monocrystalline thin-film silicon solar cells using the PSI process

  13. Light trapping in thin-film solar cells via scattering by nanostructured antireflection coatings

    E-Print Network [OSTI]

    Yu, Edward T.

    Light trapping in thin-film solar cells via scattering by nanostructured antireflection coatings X://jap.aip.org/authors #12;Light trapping in thin-film solar cells via scattering by nanostructured antireflection coatings X of nanostructured TiO2 layers fabricated on thin-film solar cells to provide, simultaneously, both antireflection

  14. Mechanics of thin-film transistors and solar cells on flexible substrates

    E-Print Network [OSTI]

    Suo, Zhigang

    Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova a,*, I be minimized throughout the fab- rication process. Amorphous silicon thin-film transistors and solar cells rights reserved. Keywords: Amorphous silicon; Thin-film transistor; Solar cell; Flexible electronics 1

  15. Dielectric back scattering patterns for light trapping in thin-film Si solar cells

    E-Print Network [OSTI]

    Polman, Albert

    Dielectric back scattering patterns for light trapping in thin-film Si solar cells M. van Lare,1 of dielectric and metallic backscattering patterns in thin-film a-Si:H solar cells. We compare devices for Light Trapping in Thin-Film Silicon Solar Cells", in Proceedings of the 23rd European Photovoltaic Solar

  16. Light trapping regimes in thin-film silicon solar cells with a photonic pattern

    E-Print Network [OSTI]

    Light trapping regimes in thin-film silicon solar cells with a photonic pattern Simone Zanotto a theoretical study of crystalline and amorphous silicon thin-film solar cells with a periodic pattern on a sub. Poortmans and V. Arkhipov (editors), Thin Film Solar Cells (Wiley, Chichester 2006). 4. P. W¨urfel, Physics

  17. BACK CONTACT MONOCRYSTALLINE THIN-FILM SILICON SOLAR CELLS FROM THE POROUS SILICON PROCESS

    E-Print Network [OSTI]

    BACK CONTACT MONOCRYSTALLINE THIN-FILM SILICON SOLAR CELLS FROM THE POROUS SILICON PROCESS F. Haase contact cells. Kraiem et al [7] made a back contact thin film monocrystalline solar cell with cell), Am Ohrberg 1, D-31860 Emmerthal, Germany ABSTRACT We develop a back contact monocrystalline thin-film

  18. ENGINEERED SUBSTRATES FOR THIN-FILM SOLAR CELLS: SCATTERING PROPERTIES OF 1D ROUGHNESS

    E-Print Network [OSTI]

    ENGINEERED SUBSTRATES FOR THIN-FILM SOLAR CELLS: SCATTERING PROPERTIES OF 1D ROUGHNESS S. Del Sorbo, Optical Properties, Substrates, Texturisation, Thin Film Solar Cells 1 MOTIVATION OF THIS WORK The aim of thin film technology is to reduce both the electrical transport losses in the bulk region of a solar

  19. Synthesis and microstructural TEM investigation of CaCu{sub 3}Ru{sub 4}O{sub 12} ceramic and thin film

    SciTech Connect (OSTI)

    Brize, Virginie [Universite Francois Rabelais, LEMA, UMR 6157 CNRS-CEA, Parc de Grandmont, 37200 Tours (France); STMicroelectronics, 16 rue P and M Curie, 37001 Tours (France); Autret-Lambert, Cecile, E-mail: cecile.autret-lambert@univ-tours.fr [Universite Francois Rabelais, LEMA, UMR 6157 CNRS-CEA, Parc de Grandmont, 37200 Tours (France); Wolfman, Jerome; Gervais, Monique; Gervais, Francois [Universite Francois Rabelais, LEMA, UMR 6157 CNRS-CEA, Parc de Grandmont, 37200 Tours (France)

    2011-10-15

    CaCu{sub 3}Ru{sub 4}O{sub 12} (CCRO) is a conductive oxide having the same structure as CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) and close lattice parameters. The later compound is strongly considered for high density parallel plates capacitors application due to its so-called colossal dielectric constant. The need for an electrode inducing CCTO epitaxial growth with a clean and sharp interface is therefore necessary, and CCRO is a good potential candidate. In this paper, the synthesis of monophasic CCRO ceramic is reported, as well as pulsed laser deposition of CCRO thin film onto (001) NdCaAlO{sub 4} substrate. Structural and physical properties of bulk CCRO were studied by transmission electron microscopy and electron spin resonance. CCRO films and ceramic exhibited a metallic behavior down to low temperature. CCRO films were (001) oriented and promoted a CCTO film growth with the same orientation. - Graphical Abstract: Structure of CaCu{sub 3}Ru{sub 4}O{sub 12} showing the RuO{sub 6} octahedra and the square planar environment for Cu{sup 2+}. Highlights: > In this study, we investigate the structural properties and microstructure of ceramics CaCu{sub 3}Ru{sub 4}O{sub 12}. > We study the conduction properties of polycrystalline material. > Then we synthesize the conductive thin film which is deposited on a high K material with the same structure (CaCu{sub 3}Ti{sub 4}O{sub 12}).

  20. Integrated thin film batteries on silicon

    E-Print Network [OSTI]

    Ariel, Nava

    2005-01-01

    Monolithic integration has been implemented successfully in complementary metal oxide semiconductor (CMOS) technology and led to improved device performance, increased reliability, and overall cost reduction. The next ...

  1. Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

    SciTech Connect (OSTI)

    Zhang, Yijun; Liu, Ming E-mail: wren@mail.xjtu.edu.cn Ren, Wei E-mail: wren@mail.xjtu.edu.cn; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang E-mail: wren@mail.xjtu.edu.cn

    2015-05-07

    One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe{sub 3}O{sub 4} thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe{sub 3}O{sub 4} thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7?nm, resulting in a superparamagnetic behavior with a blocking temperature of 210?K. After post-annealing in H{sub 2}/Ar at 400?°C, the as-grown ??Fe{sub 2}O{sub 3} sample is reduced to Fe{sub 3}O{sub 4} phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications.

  2. Crystalline Thin Films Formed by Supramolecular Assembly for

    E-Print Network [OSTI]

    Gao, Hongjun

    Crystalline Thin Films Formed by Supramolecular Assembly for Ultrahigh-Density Data Storage with crystalline materials.[9] In contrast with small-mole- cule materials, supramolecular materials, which combine the benefits of polymers with those of organic crystalline systems, have been considered a promising medium

  3. Stress and Moisture Effects on Thin Film Buckling Delamination

    E-Print Network [OSTI]

    Volinsky, Alex A.

    ­2 GPa compres- sive residual stresses were sputter deposited on top of thin (below 100 nm) copperStress and Moisture Effects on Thin Film Buckling Delamination P. Waters & A.A. Volinsky Received, commonly called telephone cords, shown in Fig. 2 for the 1 2m W film on top of a 20 nm diamond-like carbon

  4. Perovskite phase thin films and method of making

    DOE Patents [OSTI]

    Boyle, Timothy J. (Albuquerque, NM); Rodriguez, Mark A. (Albuquerque, NM)

    2000-01-01

    The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

  5. Communications to the Editor Thin-Film Differential Scanning

    E-Print Network [OSTI]

    Allen, Leslie H.

    -mail: L-ALLEN9@uiuc.edu. Figure 1. MEMS-based calorimetric sensor for TDSC (not to scale). Volume 35. In this paper we demonstrate a recently developed MEMS-based thin-film differential scanning calorimetry (TDSC a microfabricated sensor shown in Figure 1 as a calorimetric cell. The sensor consists of a Si3Nx membrane supported

  6. Enhanced Superconducting Properties of Iron Chalcogenide Thin Films 

    E-Print Network [OSTI]

    Chen, Li

    2013-07-26

    phase have been studied and correlated with the superconducting properties. Second, we reported our initial attempt on introducing the flux pinning centers into FeSe_0.5Te_0.5 thin films either under a controlled oxygen atmosphere or with a thin CeO_2...

  7. First observation of temperature dependent lightinduced response of Ge25As10Se65 thin films

    E-Print Network [OSTI]

    Khan, Pritam; Deshpande, Uday; Adarsh, K V

    2015-01-01

    Ge rich ternary chalcogenide glasses (ChG) exhibit photobleaching (PB) when illuminated with bandgap light and such an effect is originating from the combined effect of intrinsic structural changes and photo-oxidation. In a sharp contradict to these previous observations, in this letter, we demonstrate for the first time that Ge rich Ge25As10Se65 ChG thin films exhibit photodarkening (PD) at 20 K and PB at 300 and 420 K for continuous illumination of ~ 3 hours. Strikingly, the temporal evolution of PD/PB show distinct characteristics at the temperatures of illumination and provide valuable information on the light induced structural changes. Further, structure specific far infrared (FIR) absorption measurements give direct evidence of different structural units involved in PD/PB at the contrasting temperatures. By comparing the lightinduced effects in vacuum and air, we conclude that intrinsic structural changes dominate over photo-oxidation in the observed PB in Ge25As10Se65 ChG thin films.

  8. Tensile Lattice Strain Accelerates Oxygen Surface Exchange and Diffusion in La[subscript 1-x]Sr[subscript x]CoO[subscript 3-?] Thin Films

    E-Print Network [OSTI]

    Kubicek, Markus

    The influence of lattice strain on the oxygen exchange kinetics and diffusion in oxides was investigated on (100) epitaxial La[subscript 1–x]Sr[subscript x]CoO[subscript 3??] (LSC) thin films grown by pulsed laser deposition. ...

  9. Enhancement of Heat and Mass Transfer in Mechanically Contstrained Ultra Thin Films

    SciTech Connect (OSTI)

    Kevin Drost; Jim Liburdy; Brian Paul; Richard Peterson

    2005-01-01

    Oregon State University (OSU) and the Pacific Northwest National Laboratory (PNNL) were funded by the U.S. Department of Energy to conduct research focused on resolving the key technical issues that limited the deployment of efficient and extremely compact microtechnology based heat actuated absorption heat pumps and gas absorbers. Success in demonstrating these technologies will reduce the main barriers to the deployment of a technology that can significantly reduce energy consumption in the building, automotive and industrial sectors while providing a technology that can improve our ability to sequester CO{sub 2}. The proposed research cost $939,477. $539,477 of the proposed amount funded research conducted at OSU while the balance ($400,000) was used at PNNL. The project lasted 42 months and started in April 2001. Recent developments at the Pacific Northwest National Laboratory and Oregon State University suggest that the performance of absorption and desorption systems can be significantly enhanced by the use of an ultra-thin film gas/liquid contactor. This device employs microtechnology-based structures to mechanically constrain the gas/liquid interface. This technology can be used to form very thin liquid films with a film thickness less then 100 microns while still allowing gas/liquid contact. When the resistance to mass transfer in gas desorption and absorption is dominated by diffusion in the liquid phase the use of extremely thin films (<100 microns) for desorption and absorption can radically reduce the size of a gas desorber or absorber. The development of compact absorbers and desorbers enables the deployment of small heat-actuated absorption heat pumps for distributed space heating and cooling applications, heat-actuated automotive air conditioning, manportable cooling, gas absorption units for the chemical process industry and the development of high capacity CO{sub 2} absorption devices for CO{sub 2} collection and sequestration. The energy potential energy savings associated with these technologies is estimated to ultimately be 2.88 quads per year. It has become clear that commercial application of these technologies depends on a deeper understanding of the thermal phenomena encountered in a mechanically constrained ultra-thin film device. Our lack of understanding is currently limiting both the performance of these devices and the potential for further size reductions. Barriers to successful commercial applications of the mechanically-constrained ultra-thin film contactors include poorly understood single and two phase flow phenomena in the thin film, the need for improved micromachined contactors and a poor understanding of the phenomena effecting the dimensional stability of the thin film. The research included in this proposal is focused on research associated with resolving and removing these technical barriers to commercialization. The results of the research will significantly advance the prospects for the commercialization of the whole range to technologies that depend on improved gas/liquid contacting.

  10. Pulsed laser deposition and characterization of conductive RuO{sub 2} thin films

    SciTech Connect (OSTI)

    Iembo, A.; Fuso, F.; Arimondo, E.; Ciofi, C.; Pennelli, G.; Curro, G.M.; Neri, F.; Allegrini, M. |

    1997-06-01

    RuO{sub 2} thin films have been produced on silicon-based substrates by {ital in situ} pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO{sub 2}-substrate interface is very thin ({approx}3 nm), since not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.{copyright} {ital 1997 Materials Research Society.}

  11. Tailoring the coercivity in ferromagnetic ZnO thin films by 3d and 4f elements codoping

    SciTech Connect (OSTI)

    Lee, J. J.; Xing, G. Z. Yi, J. B.; Li, S.; Chen, T.; Ionescu, M.

    2014-01-06

    Cluster free, Co (3d) and Eu (4f) doped ZnO thin films were prepared using ion implantation technique accompanied by post annealing treatments. Compared with the mono-doped ZnO thin films, the samples codoped with Co and Eu exhibit a stronger magnetization with a giant coercivity of 1200?Oe at ambient temperature. This was further verified through x-ray magnetic circular dichroism analysis, revealing the exchange interaction between the Co 3d electrons and the localized carriers induced by Eu{sup 3+} ions codoping. The insight gained with modulating coercivity in magnetic oxides opens up an avenue for applications requiring non-volatility in spintronic devices.

  12. Electrically Modulated Thin Film Dynamics Controlling Bubble Manipulation in Microfluidic Confinement

    E-Print Network [OSTI]

    Debapriya Chakraborty; Suman Chakraborty

    2014-12-03

    Thin film dynamics and associated instability mechanisms have triggered a wide range of scientific innovations, as attributed to their abilities of creating fascinating patterns over small scales. Here, we demonstrate a new thin film instability phenomenon governed by electro-mechanics and hydrodynamics over interfacial scales in a narrow fluidic confinement. We first bring out the essential physics of this instability mechanism, in consideration with the fact that under the action of axial electrical field in a confined microfluidic environment, perturbations may be induced on the interfaces of thin corner films formed adjacent to the walls of a microchannel, leading to the inception of ordered lateral structures. A critical electric field exists beyond which these structures from the walls of the confinement intermingle to evolve into localized gas pockets in the form of bubbles. These bubbles do not remain static with further changes in electric field, but undergo a sequence of elongation-deformation-breakup episode in a dynamically evolving manner. By elucidating the complex interplay of electro-hydrodynmic forces and surface tension, we offer further insights into a new paradigm of interfacial instability mediated controlled microbubble manipulation for on-chip applications, bearing far-ranging scientific and technological consequences in executing designed fluidic operations in confined miniaturized environment.

  13. Abstract--In this paper, the propagation characteristics of an enhanced-thickness magnetic nanoparticle thin film are

    E-Print Network [OSTI]

    Tentzeris, Manos

    nanoparticle thin film are investigated on high resistivity silicon substrate (10,000 ohm-cm) for the first time up to 60 GHz. Contrary to other thin films, this nanoparticle thin film can achieve a thickness up to several hundred nanometers, even to micron. The enhanced thickness of this thin film is achieved

  14. Nanoscale chemical and mechanical characterization of thin films:sum frequency generation (SFG) vibrational spectroscopy at buriedinterfaces

    SciTech Connect (OSTI)

    Kweskin, S.J.

    2006-05-19

    Sum frequency generation (SFG) surface vibrational spectroscopy was used to characterize interfaces pertinent to current surface engineering applications, such as thin film polymers and novel catalysts. An array of advanced surface science techniques like scanning probe microscopy (SPM), x-ray photoelectron spectroscopy (XPS), gas chromatography (GC) and electron microscopy were used to obtain experimental measurements complementary to SFG data elucidating polymer and catalyst surface composition, surface structure, and surface mechanical behavior. Experiments reported in this dissertation concentrate on three fundamental questions: (1) How does the interfacial molecular structure differ from that of the bulk in real world applications? (2) How do differences in chemical environment affect interface composition or conformation? (3) How do these changes correlate to properties such as mechanical or catalytic performance? The density, surface energy and bonding at a solid interface dramatically alter the polymer configuration, physics and mechanical properties such as surface glass transition, adhesion and hardness. The enhanced sensitivity of SFG at the buried interface is applied to three systems: a series of acrylates under compression, the compositions and segregation behavior of binary polymer polyolefin blends, and the changes in surface structure of a hydrogel as a function of hydration. In addition, a catalytically active thin film of polymer coated nanoparticles is investigated to evaluate the efficacy of SFG to provide in situ information for catalytic reactions involving small mass adsorption and/or product development. Through the use of SFG, in situ total internal reflection (TIR) was used to increase the sensitivity of SFG and provide the necessary specificity to investigate interfaces of thin polymer films and nanostructures previously considered unfeasible. The dynamic nature of thin film surfaces is examined and it is found that the non-equilibrium states contribute to practical applications of acrylates, blends and hydrogels. Lastly, nanoparticle surfaces and the catalytic activity and selectivity of platinum cube nanoparticles are correlated to the surface intermediates in a high pressure flow reactor.

  15. Atomic and Electronic Structure of Polar Oxide Interfaces

    SciTech Connect (OSTI)

    Gajdardziska-Josifovska, Marija [University of Wisconsin Milwaukee] [University of Wisconsin Milwaukee

    2014-01-17

    In this project we developed fundamental understanding of atomic and electronic mechanisms for stabilization of polar oxide interfaces. An integrated experimental and theoretical methodology was used to develop knowledge on this important new class of ionic materials with limited dimensionality, with implications for multiple branches of the basic and applied energy sciences.

  16. Electrical Modulation of the Local Conduction at Oxide Tubular Interfaces

    SciTech Connect (OSTI)

    Hsieh, Ying-Hui [National Chiao Tung University, Hsinchu, Taiwan] [National Chiao Tung University, Hsinchu, Taiwan; Strelcov, Evgheni [ORNL] [ORNL; Jia-Ming, Liou [National Cheng Kung University, Tainan, Taiwan] [National Cheng Kung University, Tainan, Taiwan; Chia-Ying, Shen [National Chiao Tung University, Hsinchu, Taiwan] [National Chiao Tung University, Hsinchu, Taiwan; Yi-Chun, Chen [National Cheng Kung University, Tainan, Taiwan] [National Cheng Kung University, Tainan, Taiwan; Kalinin, Sergei V [ORNL] [ORNL; Ying-Hao, Chu [National Chiao Tung University, Hsinchu, Taiwan] [National Chiao Tung University, Hsinchu, Taiwan

    2013-01-01

    Hetero-interfaces between complex oxides have sparked considerable interest due to their fascinating physical properties and offer new possibilities for next-generation electronic devices. The key to realize practical applications is the control through external stimulus. In this study, we take the self-assembled BiFeO3-CoFe2O4 hetero-interface as a model system to demonstrate the non-volatile electric control of the local conduction at the complex oxide tubular interface. The fundamental mechanism behind this modulation was explored based on static and dynamic conducting atomic force microscopy. We found the movement of oxygen vacancies in the BiFeO3-CoFe2O4 heterostructure is the key to drive this intriguing behavior. This study delivers a possibility of designing new device for next-generation electronic devices.

  17. Enhancement of ultra-thin film emission using a waveguiding active layer

    E-Print Network [OSTI]

    Aad, R; Bruyant, A; Couteau, C; Lérondel, G

    2013-01-01

    We present a theoretical study on the impact of an active optical layer on the emission properties of an ultrathin luminescent film. While the study can be generalized to any material, we focus here on a simple layered medium composed of a conjugated polymers (CPs) thin film, a zinc oxide layer (ZnO) and a sapphire substrate. The study spreads throughout variable aspects including the effect of the structure parameters on the CP luminescence and radiation pattern and more specifically the influence of the absorption and emission properties of the active layer. Comparing between the passive and active layer cases, the obtained results show that an enhancement of the CP luminescence of more than 20 times can be obtained by using an optically active underlying layer. The results can be explained in terms of photon recycling where the optically active layer acts as a photon reservoir and a secondary light source for the ultra thin film. This general concept is of a special interest for ultra-trace chemosensor.

  18. Understanding strain-induced phase transformations in BiFeO3 thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dixit, Hemant; Beekman, Christianne; Schlepütz, Christian M.; Siemons, Wolter; Yang, Yongsoo; Senabulya, Nancy; Clarke, Roy; Chi, Miaofang; Christen, Hans M.; Cooper, Valentino R.

    2015-05-01

    Experiments demonstrate that under large epitaxial strain a coexisting striped phase emerges in BiFeO? thin films, which comprises a tetragonal-like (T´) and an intermediate S´ polymorph. It exhibits a relatively large piezoelectric response when switching between the coexisting phase and a uniform T´ phase. This strain-induced phase transformation is investigated through a synergistic combination of first-principles theory and experiments. The results show that the S´ phase is energetically very close to the T´ phase, but is structurally similar to the bulk rhombohedral (R) phase. By fully characterizing the intermediate S´ polymorph, it is demonstrated that the flat energy landscape resultingmore »in the absence of an energy barrier between the T´ and S´ phases fosters the above-mentioned reversible phase transformation. This ability to readily transform between the S´ and T´ polymorphs, which have very different octahedral rotation patterns and c/a ratios, is crucial to the enhanced piezoelectricity in strained BiFeO3 films. Additionally, a blueshift in the band gap when moving from R to S´ to T´ is observed. These results emphasize the importance of strain engineering for tuning electromechanical responses or, creating unique energy harvesting photonic structures, in oxide thin film architectures.« less

  19. Thermal annealing of FePt thin films by millisecond plasma arc pulses

    SciTech Connect (OSTI)

    Inaba, Yuki; Torres, Karen; Cole, Amanda; Ott, Ronald D; Klemmer, Timothy; Harrell, J W; Thompson, Gregory

    2009-01-01

    A series of 20 and 100 nm Fe{sub 53}Pt{sub 47} thin films sputter-deposited onto Si substrates have been thermally annealed using a pulsed thermal plasma arc lamp. A series of one, three or five pulses were applied to the thin films with widths of either 50 or 100 ms. The microstructure and magnetic properties of these annealed Fe{sub 53}Pt{sub 47} films are discussed according to the various annealing conditions and A1 to L1{sub 0} phase transformation. Upon pulse annealing, the average in-plane grain size of 15 nm (nearly equivalent for both film thicknesses) was observed to increase to values near 20 nm. In general, increasing the pulse width or number of pulses increased the L1{sub 0} order parameter, tetragonality of the c/a ratio and coercivity of the specimen. The exception to this trend was for five pulses at 100 ms for both film thicknesses, which indicated a reduction of the order parameter and coercivity. This reduction is believed to be a result of the interdiffusion of Fe and Pt into the Si substrate and the formation of iron oxide clusters in the grain boundaries characterized by atom probe tomography.

  20. Oxidation/Reduction Reactions at the Metal Contact-TlBr Interface...

    Office of Scientific and Technical Information (OSTI)

    Conference: OxidationReduction Reactions at the Metal Contact-TlBr Interface: An X-ray Photoelectron Spectroscopy Study Citation Details In-Document Search Title: Oxidation...

  1. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2010-06-15

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  2. Buffer layer for thin film structures

    DOE Patents [OSTI]

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2006-10-31

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  3. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

    1999-02-09

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  4. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

    1997-10-07

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  5. Thin-Film Reliability Trends Toward Improved Stability: Preprint

    SciTech Connect (OSTI)

    Jordan, D. C.; Kurtz, S. R.

    2011-07-01

    Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (Rd) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2+/-0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

  6. Eddy Current Testing for Detecting Small Defects in Thin Films

    SciTech Connect (OSTI)

    Obeid, Simon; Tranjan, Farid M. [Electrical and Computer Engineering Department, UNCC (United States); Dogaru, Teodor [Albany Instruments, 426-O Barton Creek, Charlotte, NC 28262 (United States)

    2007-03-21

    Presented here is a technique of using Eddy Current based Giant Magneto-Resistance sensor (GMR) to detect surface and sub-layered minute defects in thin films. For surface crack detection, a measurement was performed on a copper metallization of 5-10 microns thick. It was done by scanning the GMR sensor on the surface of the wafer that had two scratches of 0.2 mm, and 2.5 mm in length respectively. In another experiment, metal coatings were deposited over the layers containing five defects with known lengths such that the defects were invisible from the surface. The limit of detection (resolution), in terms of defect size, of the GMR high-resolution Eddy Current probe was studied using this sample. Applications of Eddy Current testing include detecting defects in thin film metallic layers, and quality control of metallization layers on silicon wafers for integrated circuits manufacturing.

  7. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, S.P.; Chamberlin, R.

    1999-02-09

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

  8. Thin film photovoltaic device and process of manufacture

    DOE Patents [OSTI]

    Albright, S.P.; Chamberlin, R.

    1997-10-07

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

  9. Method for formation of thin film transistors on plastic substrates

    DOE Patents [OSTI]

    Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

    1998-10-06

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

  10. Method for formation of thin film transistors on plastic substrates

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

    1998-10-06

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

  11. Status of High Performance PV: Polycrystalline Thin-Film Tandems

    SciTech Connect (OSTI)

    Symko-Davies, M.

    2005-02-01

    The High-Performance Photovoltaic (HiPerf PV) Project was initiated by the U.S. Department of Energy to substantially increase the viability of photovoltaics (PV) for cost-competitive applications so that PV can contribute significantly to our energy supply and our environment. The HiPerf PV Project aims at exploring the ultimate performance limits of existing PV technologies, approximately doubling their sunlight-to-electricity conversion efficiencies during its course. This work includes bringing thin-film cells and modules toward 25% and 20% efficiencies, respectively, and developing multijunction concentrator cells and modules able to convert more than one-third of the sun's energy to electricity (i.e., 33% efficiency). This paper will address recent accomplishments of the NREL in-house research effort involving polycrystalline thin-film tandems, as well as the research efforts under way in the subcontracted area.

  12. Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

    SciTech Connect (OSTI)

    Tadanaga, Kiyoharu, E-mail: tadanaga@chem.osakafu-u.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Duran, Alicia; Aparacio, Mario [Instituto de Cerámica y Vidrio, Consejo Superior de Investigaciones Científicas, Kelsen 5 (Campus de Cantoblanco), Madrid, 28049 (Spain)

    2014-05-01

    Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.

  13. Substrates suitable for deposition of superconducting thin films

    DOE Patents [OSTI]

    Feenstra, Roeland (Oak Ridge, TN); Boatner, Lynn A. (Oak Ridge, TN)

    1993-01-01

    A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

  14. A comparison of thick film and thin film traffic stripes 

    E-Print Network [OSTI]

    Keese, Charles J

    1952-01-01

    of this thesis. CONTESTS Introduction ~ ~ ~ ~ ~ 1 Scope and Obfectives Method of Conducting Road Service Tests ~ ~ ~ ~ ~ ~ ~ ~ 7 ~ ~ ~ ~ ~ ~ ~ ~ ~ 8 PART I A Comparison of Paint Films of Various Thicknesses . . . . . . . . ~ ~, ~, ~ 72 App1ioation... of Test Stripes . Results of Thiokness Tests . 13 19 Conclusions 2$ PART II A Comparison of Various Thick Film and Thin Film Traffic Stripes. 26 Paint Stripes Over Adhesive Films Rosin Striping Compounds. . . + ~ . , ~ 29 ~ ~ ~ Preforsmd Plastic...

  15. Fabrication and testing of thermoelectric thin film devices

    SciTech Connect (OSTI)

    Wagner, A.V.; Foreman, R.J.; Summers, L.J.; Barbee, T.W. Jr.; Farmer, J.C. [Lawrence Livermore National Lab., CA (United States). Chemistry and Materials Science Dept.

    1996-03-01

    Two thin-film thermoelectric devices are experimentally demonstrated. The relevant thermal loads on the cold junction of these devices are determined. The analytical form of the equation that describes the thermal loading of the device enables one to model the performance based on the independently measured electronic properties of the films forming the devices. This model elucidates which parameters determine device performance, and how they can be used to maximize performance.

  16. Experimental thin film deposition and surface analysis techniques

    SciTech Connect (OSTI)

    Collins, W.E.; Rambabu, B.

    1986-01-01

    An attempt has been made to present some of the thin-film deposition and surface analysis techniques which may be useful in growing superionic conducting materials. Emphasis is made on the importance of being careful in selecting process parameters and materials in order to produce films with properties outlined in this article. Also, special care should be given to proper consideration of grain boundary effects.

  17. Thin film composition with biological substance and method of making

    DOE Patents [OSTI]

    Campbell, Allison A. (Kennewick, WA); Song, Lin (Richland, WA)

    1999-01-01

    The invention provides a thin-film composition comprising an underlying substrate of a first material including a plurality of attachment sites; a plurality of functional groups chemically attached to the attachment sites of the underlying substrate; and a thin film of a second material deposited onto the attachment sites of the underlying substrate, and a biologically active substance deposited with the thin-film. Preferably the functional groups are attached to a self assembling monolayer attached to the underlying substrate. Preferred functional groups attached to the underlying substrate are chosen from the group consisting of carboxylates, sulfonates, phosphates, optionally substituted, linear or cyclo, alkyl, alkene, alkyne, aryl, alkylaryl, amine, hydroxyl, thiol, silyl, phosphoryl, cyano, metallocenyl, carbonyl, and polyphosphate. Preferred materials for the underlying substrate are selected from the group consisting of a metal, a metal alloy, a plastic, a polymer, a proteic film, a membrane, a glass or a ceramic. The second material is selected from the group consisting of inorganic crystalline structures, inorganic amorphus structures, organic crystalline structures, and organic amorphus structures. Preferred second materials are phosphates, especially calcium phosphates and most particularly calcium apatite. The biologically active molecule is a protein, peptide, DNA segment, RNA segment, nucleotide, polynucleotide, nucleoside, antibiotic, antimicrobal, radioisotope, chelated radioisotope, chelated metal, metal salt, anti-inflamatory, steriod, nonsteriod anti-inflammatory, analgesic, antihistamine, receptor binding agent, or chemotherapeutic agent, or other biologically active material. Preferably the biologically active molecule is an osteogenic factor the compositions listed above.

  18. Thin film composition with biological substance and method of making

    SciTech Connect (OSTI)

    Campbell, A.A.; Song, L.

    1999-09-28

    The invention provides a thin-film composition comprising an underlying substrate of a first material including a plurality of attachment sites; a plurality of functional groups chemically attached to the attachment sites of the underlying substrate; and a thin film of a second material deposited onto the attachment sites of the underlying substrate, and a biologically active substance deposited with the thin-film. Preferably the functional groups are attached to a self assembling monolayer attached to the underlying substrate. Preferred functional groups attached to the underlying substrate are chosen from the group consisting of carboxylates, sulfonates, phosphates, optionally substituted, linear or cyclo, alkyl, alkene, alkyne, aryl, alkylaryl, amine, hydroxyl, thiol, silyl, phosphoryl, cyano, metallocenyl, carbonyl, and polyphosphate. Preferred materials for the underlying substrate are selected from the group consisting of a metal, a metal alloy, a plastic, a polymer, a proteic film, a membrane, a glass or a ceramic. The second material is selected from the group consisting of inorganic crystalline structures, inorganic amorphous structures, organic crystalline structures, and organic amorphous structures. Preferred second materials are phosphates, especially calcium phosphates and most particularly calcium apatite. The biologically active molecule is a protein, peptide, DNA segment, RNA segment, nucleotide, polynucleotide, nucleoside, antibiotic, antimicrobial, radioisotope, chelated radioisotope, chelated metal, metal salt, anti-inflammatory, steroid, nonsteroid anti-inflammatory, analgesic, antihistamine, receptor binding agent, or chemotherapeutic agent, or other biologically active material. Preferably the biologically active molecule is an osteogenic factor consisting of the compositions listed above.

  19. Geometric shape control of thin film ferroelectrics and resulting structures

    DOE Patents [OSTI]

    McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN)

    2000-01-01

    A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

  20. Deuterium phase behavior in thin-film Pd

    SciTech Connect (OSTI)

    Munter, A.E.; Heuser, B.J.

    1998-07-01

    The absorption of deuterium from the gas phase into two Pd thin films 668 {Angstrom} and 1207 {Angstrom} thick was measured at room temperature with {ital in situ} neutron reflectometry. Room-temperature solubility isothermal curves, out-of-plane film expansion, and deuterium depth profiles were determined from fits to the neutron reflectivity data. The measurements demonstrate that the deuterium solubility behavior, both in solid solution and within the two-phase region, is strongly perturbed by the thin-film geometry, consistent with previous solubility measurements in the published literature. The phase behavior investigated here was observed to depend on film thickness and on deuterium cycling through the two-phase region. The 668-{Angstrom} film exhibited the greatest initial phase perturbation and most significant changes upon cycling. Upon repeated cycling, both films approach nearly identical deuterium isothermal solubility and out-of-plane expansion behaviors. The observed equilibrium out-of-plane expansion behavior was consistent with the films expanding under an in-plane clamping constraint imposed by the substrate. The effect of this substrate constraining force is to amplify the out-of-plane expansion beyond that expected in bulk Pd. Taken together, these measurements implicate the film/substrate interfacial clamping interaction as the origin of the perturbed hydrogen phase behavior in thin-film geometry. {copyright} {ital 1998} {ital The American Physical Society}

  1. Reactivity Screening of Anatase TiO2 Nanotube Arrays and Anatase Thin Films: A Surface Chemistry Point of View

    SciTech Connect (OSTI)

    Funk, S.; Hokkanen, B.; Nurkic, T.; Goering, J.; Kadossov, E.; Burghaus, Uwe; Ghicov, A.; Schmuki, P.; Yu, Zhongqing; Thevuthasan, Suntharampillai; Saraf, Laxmikant V.

    2008-09-19

    As a reactivity screening we collected thermal desorption spectroscopy (TDS) data of iso-butane, O2, CO2, and CO adsorbed on ordered TiO2 nanotube (TiNTs) arrays. As a reference system iso-butane adsorption on an anatase TiO2 thin film has been considered as well. The as-grown TiNTs are vertically aligned and amorphous. Polycrystalline (poly.) anatase or poly. anatase/rutile mixed nanotubes are formed by annealing confirmed by x-ray diffraction (XRD) and scanning electron microscopy (SEM). The anatase thin film was grown on SrTiO3(001) and characterized by XRD and atomic force microscopy (AFM). Surprisingly, oxygen distinctly interacts with the TiNTs whereas this process is not observed on fully oxidized single crystal rutile TiO2(110). Desorption temperatures of 110-150 K and 100-120 K were observed for CO2 and CO, respectively, on the TiNTs. Variations in the binding energies of the alkanes on TiNTs and anatase thin films also were present, i.e., a structure-activity relationship (SAR) is evident.

  2. Illumination induced charge separation at tetraphenyl-porphyrin/metal oxide interfaces

    E-Print Network [OSTI]

    Shapira, Yoram

    Illumination induced charge separation at tetraphenyl-porphyrin/metal oxide interfaces Y. Zidon were studied at tetraphenyl-porphyrin H2TPP /metal oxide interfaces by surface photovoltage spectroscopy. The thickness of the depleted Ti and Sn oxide layers was about 2 nm. Acceptorlike interface

  3. Influence of curvature on the device physics of thin film transistors on flexible substrates

    SciTech Connect (OSTI)

    Amalraj, Rex; Sambandan, Sanjiv

    2014-10-28

    Thin film transistors (TFTs) on elastomers promise flexible electronics with stretching and bending. Recently, there have been several experimental studies reporting the behavior of TFTs under bending and buckling. In the presence of stress, the insulator capacitance is influenced due to two reasons. The first is the variation in insulator thickness depending on the Poisson ratio and strain. The second is the geometric influence of the curvature of the insulator-semiconductor interface during bending or buckling. This paper models the role of curvature on TFT performance and brings to light an elegant result wherein the TFT characteristics is dependent on the area under the capacitance-distance curve. The paper compares models with simulations and explains several experimental findings reported in literature.

  4. Multilayer thin film thermoelectrics produced by sputtering

    SciTech Connect (OSTI)

    Wagner, A.V.; Foreman, R.J.; Summers, L.J.; Barbee, T.W. Jr.; Farmer, J.C.

    1995-06-19

    In this work we explore the possibility of achieving bulk electrical properties in single layer sputter deposited films grown epitaxially on (111) oriented BaF{sub 2} substrates. There are a number of sputter deposition parameters that can be varied in order to optimize the film quality. It is important to understand the effect of varying the deposition temperature, Ar sputtering gas pressure, and the substrate bias. We will consider only Bi and Bi{sub 0.86}Sb{sub 0.14} films in this paper. These materials were chosen since they have the same simple structure, two different band gaps and do not change significantly either in physical or electrical properties with small amounts of cross contamination. We will also present our work on multilayer thermoelectrics made of Bi and Bi{sub 0.86}Sb{sub 0.14} layers. There has been considerable interest in this multilayer structure in the literature. Theoretical calculations of the band structure and interface states of these multilayer structures have been made by Mustafaev and Agassi et al. respectively [6,7]. Experimentally Yoshida et al. have examined similar multilayer structures grown by MBE as well as Bi/Sb multilayer samples in which report an anomalous thermoelectric power [8].

  5. Materials and interfaces for catalysis, separation, storage, and environmental applications

    E-Print Network [OSTI]

    Nair, Sankar

    the next generation of catalysts, separation processes, gas and liquid storage technologiesMaterials and interfaces for catalysis, separation, storage, and environmental applications Advanced materials and interfaces (including surfaces, thin films, and membranes) are a key to developing

  6. Methods for fabricating thin film III-V compound solar cell

    DOE Patents [OSTI]

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  7. May 2003 NREL/CP-520-33933 Amorphous and Thin-Film

    E-Print Network [OSTI]

    Deng, Xunming

    May 2003 · NREL/CP-520-33933 Amorphous and Thin-Film Silicon B.P. Nelson, H.A. Atwater, B. von and Thin-Film Silicon Brent P. Nelson,1 Harry A. Atwater,2 Bolko von Roedern,1 Jeff Yang,3 Paul Sims,4 in the Amorphous and Thin-Film Silicon session at the National Center for Photovoltaics and Solar Program Review

  8. Deployable telescope having a thin-film mirror and metering structure

    DOE Patents [OSTI]

    Krumel, Leslie J. (Cedar Crest, NM); Martin, Jeffrey W. (Albuquerque, NM)

    2010-08-24

    A deployable thin-film mirror telescope comprises a base structure and a metering structure. The base structure houses a thin-film mirror, which can be rolled for stowage and unrolled for deployment. The metering structure is coupled to the base structure and can be folded for stowage and unfolded for deployment. In the deployed state, the unrolled thin-film mirror forms a primary minor for the telescope and the unfolded metering structure positions a secondary minor for the telescope.

  9. p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells

    E-Print Network [OSTI]

    p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells Ken K. Chin n substitution of Cd CuCd 0=À #12; #12; play critical roles in p-doping of CdTe in CdS/CdTe thin film solar cells in Fig. 1. As for the CdTe polycrystalline thin film in a CdS/CdTe solar cell, it is still being debated

  10. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, J.J. III; Halpern, B.L.

    1993-10-26

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

  11. DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important contributor to the global energy demand by the mid-21st-century. Cu(In,Ga)Se2 (CIGS) solar cells, which haveDISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler

  12. Electrochromism vs. the Bugs:DevelopingWO3 Thin Film Windows...

    Office of Scientific and Technical Information (OSTI)

    Electrochromism vs. the Bugs:DevelopingWO3 Thin Film Windows toControl Photoactive Biological Systems. Citation Details In-Document Search Title: Electrochromism vs. the...

  13. Nonlinear optical characterization of ZnS thin film synthesized by chemical spray pyrolysis method

    SciTech Connect (OSTI)

    G, Sreeja V; Anila, E. I., E-mail: anilaei@gmail.com; R, Reshmi, E-mail: anilaei@gmail.com; John, Manu Punnan, E-mail: anilaei@gmail.com [Optolectronic and Nanomaterials Research Laboratory, Department of Physics, Union Christian College, Aluva-683 102, Kerala (India); V, Sabitha P; Radhakrishnan, P. [International School of Photonics, CUSAT, Cochin-22 (India)

    2014-10-15

    ZnS thin film was prepared by Chemical Spray Pyrolysis (CSP) method. The sample was characterized by X-ray diffraction method and Z scan technique. XRD pattern showed that ZnS thin film has hexagonal structure with an average size of about 5.6nm. The nonlinear optical properties of ZnS thin film was studied by open aperture Z-Scan technique using Q-switched Nd-Yag Laser at 532nm. The Z-scan plot showed that the investigated ZnS thin film has saturable absorption behavior. The nonlinear absorption coefficient and saturation intensity were also estimated.

  14. Investigation of the optical properties of MoS{sub 2} thin films...

    Office of Scientific and Technical Information (OSTI)

    ellipsometry Spectroscopic ellipsometry (SE) characterization of layered transition metal dichalcogenide (TMD) thin films grown by vapor phase sulfurization is reported. By...

  15. Temperature dependence of the spin relaxation in highly degenerate ZnO thin films

    SciTech Connect (OSTI)

    Prestgard, M. C.; Siegel, G.; Tiwari, A.; Roundy, R.; Raikh, M.

    2015-02-28

    Zinc oxide is considered a potential candidate for fabricating next-generation transparent spintronic devices. However, before this can be achieved, a thorough scientific understanding of the various spin transport and relaxation processes undergone in this material is essential. In the present paper, we are reporting our investigations into these processes via temperature dependent Hanle experiments. ZnO thin films were deposited on c-axis sapphire substrates using a pulsed laser deposition technique. Careful structural, optical, and electrical characterizations of the films were performed. Temperature dependent non-local Hanle measurements were carried out using an all-electrical scheme for spin injection and detection over the temperature range of 20–300?K. From the Hanle data, spin relaxation time in the films was determined at different temperatures. A detailed analysis of the data showed that the temperature dependence of spin relaxation time follows the linear-in-momentum Dyakonov-Perel mechanism.

  16. Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

    SciTech Connect (OSTI)

    Hanyu, Yuichiro, E-mail: y-hanyu@lucid.msl.titech.ac.jp; Domen, Kay [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan)] [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Nomura, Kenji [Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan)] [Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan); Hiramatsu, Hidenori; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan) [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan); Kumomi, Hideya [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan)] [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan) [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Frontier Research Center, Tokyo Institute of Technology, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama (Japan)

    2013-11-11

    We report an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors (TFTs) annealed at 300?°C exhibit good operation characteristics; while those annealed at ?400?°C show deteriorated ones. Thermal desorption spectra (TDS) of H{sub 2}O indicate that this threshold annealing temperature corresponds to depletion of H{sub 2}O desorption from the a-IGZO layer. Hydrogen re-doping by wet oxygen annealing recovers the good TFT characteristic. The hydrogens responsible for this passivation have specific binding energies corresponding to the desorption temperatures of 300–430?°C. A plausible structural model is suggested.

  17. Sol-gel preparation of lead magnesium niobate (PMN) powders and thin films

    DOE Patents [OSTI]

    Boyle, T.J.

    1999-01-12

    A method of preparing a lead magnesium niobium oxide (PMN), Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}, precursor solution by a solvent method wherein a liquid solution of a lead-complex PMN precursor is combined with a liquid solution of a niobium-complex PMN precursor, the combined lead- and niobium-complex liquid solutions are reacted with a magnesium-alkyl solution, forming a PMN precursor solution and a lead-based precipitate, and the precipitate is separated from the reacted liquid PMN precursor solution to form a precipitate-free PMN precursor solution. This precursor solution can be processed to form both ferroelectric powders and thin films. 3 figs.

  18. Sol-Gel Preparation Of Lead Magnesium Ni Obate (Pmn) Powdersand Thin Films

    DOE Patents [OSTI]

    Boyle, Timothy J. (Albuquerque, NM)

    1999-01-12

    A method of preparing a lead magnesium niobium oxide (PMN), Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3, precursor solution by a solvent method wherein a liquid solution of a lead-complex PMN precursor is combined with a liquid solution of a niobium-complex PMN precursor, the combined lead- and niobium-complex liquid solutions are reacted with a magnesium-alkyl solution, forming a PMN precursor solution and a lead-based precipitate, and the precipitate is separated from the reacted liquid PMN precursor solution to form a precipitate-free PMN precursor solution. This precursor solution can be processed to form both ferroelectric powders and thin films.

  19. Effect of molarity on properties of spray pyrolysed SnO{sub 2}:F thin films

    SciTech Connect (OSTI)

    Deepu, D. R., E-mail: kpv@cusat.ac.in; Kartha, C. Sudha, E-mail: kpv@cusat.ac.in; Vijayakumar, K. P., E-mail: kpv@cusat.ac.in [Department of Physics, Cochin University of Science and Technology, Cochin - 682022 (India)

    2014-01-28

    Fluorine doped tin oxide (FTO) thin films were prepared by using automated Chemical Spray Pyrolysis (CSP) machine and the effect of concentration of the precursors on the conductivity and transmittance of the films were studied. The resistivity (?) and mobility (?) are in the range of 10{sup ?3}–10{sup ?4} ?-cm and 8.2–13.5 cm{sup 2}V{sup ?1}s{sup ?1} respectively. The electron density lies between 3.4 × 10{sup 20} and 6.6×10{sup 20} cm{sup ?3}. The film transmittance varies between 70 to 80% and the films shows very good reflectivity in the IR-NIR region. Prepared films can be used as transparent electrodes in photo voltaic and optoelectronic devices.

  20. Damage mechanisms in thin film solar cells during sputtering deposition of transparent conductive coatings

    SciTech Connect (OSTI)

    Fan Qihua; Liao Xianbo [Department of Physics and Astronomy, University of Toledo, 2801 West Bancroft Street, Toledo, Ohio 43606 (United States); Deng, Michael [Xunlight Corporation, 3145 Nebraska Avenue, Toledo, Ohio 43607 (United States); Deng Xunming [Department of Physics and Astronomy, University of Toledo, 2801 West Bancroft Street, Toledo, Ohio 43606 (United States); Xunlight Corporation, 3145 Nebraska Avenue, Toledo, Ohio 43607 (United States)

    2009-02-01

    Amorphous silicon (a-Si) based thin film solar cell grown on flexible stainless steel substrate is one of the most promising energy conversion devices in the future. This type of solar cell uses a transparent conductive oxide (TCO) film as top electrode. It has been a widely accepted opinion that the radio frequency sputtering deposition of the TCO film produces a higher yield than direct current sputtering, and the reason is not clear. Here we show that the damage to the solar cell during the sputtering process is caused by a reverse bias applied to the n-i-p junction. This reverse bias is related to the characteristics of plasma discharge. The mechanism we reveal may significantly affect the solar cell process.

  1. Optoelectronics Devices Based on Zinc Oxide Thin Films and Nanostructures

    E-Print Network [OSTI]

    Chu, Sheng

    2011-01-01

    get the basis of high output power LEDs and lasers, singleget the basis of high output power LEDs and lasers, singleEL spectra. The output power of the LED was characterized to

  2. Cathodic Arc Deposition of Copper Oxide Thin Films

    E-Print Network [OSTI]

    MacGill, R.A.

    2011-01-01

    compatibility. A cathodic arc plasma source with a copperon operating a cathodic arc plasma source with a copperdeposited using a cathodic arc plasma source with a copper

  3. CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS

    E-Print Network [OSTI]

    Hart, Gus

    . Oliphant in its final form and have found that (1) its format, citations, and bibli- ographical style

  4. Oxide-Supported Metal Thin-Film Catalysts: The How

    E-Print Network [OSTI]

    Rappe, Andrew M.

    in a wide variety of industrial chemical processes such as the catalytic treatment of automotive exhaust

  5. Cathodic Arc Deposition of Copper Oxide Thin Films

    E-Print Network [OSTI]

    MacGill, R.A.

    2011-01-01

    can increase the radiation heat transfer considerably andof thermal radiation heat transfer from the inner electrodesof enhanced radiation heat transfer of, e.g. , RF parts in

  6. Cathodic Arc Deposition of Copper Oxide Thin Films

    E-Print Network [OSTI]

    MacGill, R.A.

    2011-01-01

    of enhanced radiation heat transfer of, e.g. , RF parts incan increase the radiation heat transfer considerably andof thermal radiation heat transfer from the inner electrodes

  7. Growth and Characterization of Epitaxial Oxide Thin Films

    E-Print Network [OSTI]

    Garg, Ashish

    Ashish Garg St. John’s College Cambridge A Dissertation submitted for the Degree of Doctor of Philosophy at University of Cambridge December 2001 n; c;;erh;y9' n; c; r;j;h;y9' n; B;>;t;&B;;jy;' n; c; B;;rk:;9r = vy;y;e k&:t;e v;Q;*t; Av; 9n... or other establishment. The content of this dissertation does not exceed 60,000 words. Ashish Garg St. John’s College, Cambridge December 2001 Some of the work carried out during past three years has been published as follows: 1. A. Garg, J. A. Leake, and Z...

  8. Superhydrophobic Metal-Oxide Thin Film Coatings - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With Livermore National Lab onSupercritical CO2Industrial Technologies

  9. Durable silver thin film coating for diffraction gratings

    DOE Patents [OSTI]

    Wolfe, Jesse D. (Discovery Bay, CA); Britten, Jerald A. (Oakley, CA); Komashko, Aleksey M. (San Diego, CA)

    2006-05-30

    A durable silver film thin film coated non-planar optical element has been developed to replace Gold as a material for fabricating such devices. Such a coating and resultant optical element has an increased efficiency and is resistant to tarnishing, can be easily stripped and re-deposited without modifying underlying grating structure, improves the throughput and power loading of short pulse compressor designs for ultra-fast laser systems, and can be utilized in variety of optical and spectrophotometric systems, particularly high-end spectrometers that require maximized efficiency.

  10. High-temperature superconducting thin-film-based electronic devices

    SciTech Connect (OSTI)

    Wu, X.D; Finokoglu, A.; Hawley, M.; Jia, Q.; Mitchell, T.; Mueller, F.; Reagor, D.; Tesmer, J.

    1996-09-01

    This the final report of a one-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project involved optimization of processing of Y123 and Tl-2212 thin films deposited on novel substrates for advanced electronic devices. The Y123 films are the basis for development of Josephson Junctions to be utilized in magnetic sensors. Microwave cavities based on the Tl-2212 films are the basis for subsequent applications as communication antennas and transmitters in satellites.

  11. Thin-Film Material Science and Processing | Materials Science | NREL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S.Week DayDr. JeffreyThermalš ÐÓÔÑ ÒØ ÓworkThin-Film

  12. Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

    DOE Patents [OSTI]

    Ramanathan, Kannan V. (Lakewood, CA); Contreras, Miguel A. (Golden, CA); Bhattacharya, Raghu N. (Littleton, CA); Keane, James (Lakewood, CA); Noufi, Rommel (Golden, CA)

    1999-01-01

    The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

  13. Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

    DOE Patents [OSTI]

    Jansen, Kai W. (Lawrenceville, NJ); Maley, Nagi (Exton, PA)

    2001-01-01

    High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

  14. Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

    DOE Patents [OSTI]

    Jansen, Kai W. (Lawrenceville, NJ); Maley, Nagi (Exton, PA)

    2000-01-01

    High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

  15. Reflection high-energy electron diffraction beam-induced structural and property changes on WO{sub 3} thin films

    SciTech Connect (OSTI)

    Du, Y., E-mail: yingge.du@pnnl.gov; Varga, T. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Zhang, K. H. L.; Chambers, S. A. [Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

    2014-08-04

    Reduction of transition metal oxides can greatly change their physical and chemical properties. Using deposition of WO{sub 3} as a case study, we demonstrate that reflection high-energy electron diffraction (RHEED), a surface-sensitive tool widely used to monitor thin-film deposition processes, can significantly affect the cation valence and physical properties of the films through electron-beam induced sample reduction. The RHEED beam is found to increase film smoothness during epitaxial growth of WO{sub 3}, as well as change the electronic properties of the film through preferential removal of surface oxygen.

  16. Reflection High-Energy Electron Diffraction Beam-Induced Structural and Property Changes on WO3 Thin Films

    SciTech Connect (OSTI)

    Du, Yingge; Zhang, Hongliang; Varga, Tamas; Chambers, Scott A.

    2014-08-08

    Reduction of transition metal oxides can greatly change their physical and chemical properties. Using deposition of WO3 as a case study, we demonstrate that reflection high-energy electron diffraction (RHEED), a surface-sensitive tool widely used to monitor thin-film deposition processes, can significantly affect the cation valence and physical properties of the films through electron-beam induced sample reduction. The RHEED beam is found to increase film smoothness during epitaxial growth of WO3, as well as change the electronic properties of the film through preferential removal of surface oxygen.

  17. Gas sensing properties of magnesium doped SnO{sub 2} thin films in relation to AC conduction

    SciTech Connect (OSTI)

    Deepa, S.; Skariah, Benoy Thomas, Boben; Joseph, Anisha

    2014-01-28

    Conducting magnesium doped (0 to 1.5 wt %) tin oxide thin films prepared by Spray Pyrolysis technique achieved detection of 1000 ppm of LPG. The films deposited at 304 °C exhibit an enhanced response at an operating temperature of 350 °C. The microstructural properties are studied by means of X-ray diffraction. AC conductivity measurements are carried out using precision LCR meter to analyze the parameters that affect the variation in sensing. The results are correlated with compositional parameters and the subsequent modification in the charge transport mechanism facilitating an enhanced LPG sensing action.

  18. Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

    E-Print Network [OSTI]

    Heo, Jaeyeong

    We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, ...

  19. Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor 

    E-Print Network [OSTI]

    Nominanda, Helinda

    2004-01-01

    The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

  20. Synthesis and Characterization of Self-assembled c-axis Oriented Bi2Sr3Co2Oy Thin Films by the Sol gel Method

    SciTech Connect (OSTI)

    Lei H.; Zhu, X.; Tang, X.; Shi, D.; Jian, H.; Yeoh, W.K.; Zhao, B.; Yang, J.; Li, Q.; Zheng, R.; Dou, S.; Sun, Y.

    2011-08-18

    Bi{sub 2}Sr{sub 3}Co{sub 2}Oy thin films are prepared on SrTiO{sub 3} (100), (110) and (111) single crystal substrates using the sol-gel method. All the thin films are c-axis oriented regardless of the orientation of the substrate suggesting self-assembled c-axis orientation, and X-ray photoelectron spectroscopy results give evidence of coexistence of Co{sup 3+} and Co{sup 2+} ions in the derived films. Transmission electronic microscopy observations reveal that all samples are c-axis oriented with no obvious differences for different samples, and the c-axis lattice constant is determined as 15 {angstrom} suggesting the misfit structure. A phenomenological thermodynamic phase diagram for self-assembled c-axis orientation is established for misfit cobaltate-based films using chemical solution deposition. All samples behave like semiconductors due to the coexistence of Co{sup 3+}/Co{sup 2+} ions, and the resistivity at 350 K is 47, 39 and 17 m{Omega} cm for the thin films on SrTiO{sub 3} (100), (110) and (111), respectively, whereas the Seebeck coefficient at 300 K is 97, 89 and 77 {micro}V K{sup -1}. The successful attainment of Bi{sub 2}Sr{sub 3}Co{sub 2}O{sub y} thin films with self-assembled c-axis orientation will provide an effective prototype for investigation of growth mechanisms in complex oxide thin films with a misfit structure.

  1. Comparative study of the mechanical properties of nanostructured thin films on stretchable substrates

    SciTech Connect (OSTI)

    Djaziri, S. [Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237 Düsseldorf (Germany); Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Renault, P.-O.; Le Bourhis, E.; Goudeau, Ph., E-mail: Philippe.goudeau@univ-poitiers.fr [Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Faurie, D. [LSPM, (UPR 3407 CNRS), Université Paris 13, Institut Galilée, 99 avenue Jean-Baptiste Clément, 93430 Villetaneuse (France); Geandier, G. [Institut Jean Lamour (UMR 3079 CNRS), Université de Lorraine, Parc de Saurupt, CS 50840, 54011 NANCY Cedex (France); Mocuta, C.; Thiaudière, D. [Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette Cedex (France)

    2014-09-07

    Comparative studies of the mechanical behavior between copper, tungsten, and W/Cu nanocomposite based on copper dispersoïd thin films were performed under in-situ controlled tensile equi-biaxial loadings using both synchrotron X-ray diffraction and digital image correlation techniques. The films first deform elastically with the lattice strain equal to the true strain given by digital image correlation measurements. The Cu single thin film intrinsic elastic limit of 0.27% is determined below the apparent elastic limit of W and W/Cu nanocomposite thin films, 0.30% and 0.49%, respectively. This difference is found to be driven by the existence of as-deposited residual stresses. Above the elastic limit on the lattice strain-true strain curves, we discriminate two different behaviors presumably footprints of plasticity and fracture. The Cu thin film shows a large transition domain (0.60% true strain range) to a plateau with a smooth evolution of the curve which is associated to peak broadening. In contrast, W and W/Cu nanocomposite thin films show a less smooth and reduced transition domain (0.30% true strain range) to a plateau with no peak broadening. These observations indicate that copper thin film shows some ductility while tungsten/copper nanocomposites thin films are brittle. Fracture resistance of W/Cu nanocomposite thin film is improved thanks to the high compressive residual stress and the elimination of the metastable ?-W phase.

  2. Effects of Process Conditions on Properties of Electroplated Ni Thin Films for Microsystem Applications

    E-Print Network [OSTI]

    Fleck, Norman A.

    Effects of Process Conditions on Properties of Electroplated Ni Thin Films for Microsystem, Southampton SO17 1QJ, United Kingdom The properties of electroplated Ni thin films have been systematically, micromotors, and pneumatic actuators.3-11 Ni and NiFe are the electroplated metals most commonly used for MEMS

  3. Ambient induced degradation and chemically activated recovery in copper phthalocyanine thin film transistors

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Ambient induced degradation and chemically activated recovery in copper phthalocyanine thin film 2009 The electrical degradation aging of copper phthalocyanine CuPc organic thin film transistors OTFTs of Physics. DOI: 10.1063/1.3159885 I. INTRODUCTION The recent demand for low cost, versatile electronic de

  4. Focused ion beam specimen preparation for electron holography of electrically biased thin film solar cells

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    solar cells M. Duchamp1 , M. den Hertog2 , R. Imlau1 , C. B. Boothroyd1 , A. Kovács1 , A. H. Tavabi1, biased TEM specimen, thin film solar cell, FIB Thin films of hydrogenated Si (Si:H) can be used as active absorber layers in solar cells deposited on low cost substrates using plasma-enhanced chemical vapour

  5. Dual gratings for enhanced light trapping in thin-film solar cells

    E-Print Network [OSTI]

    Dual gratings for enhanced light trapping in thin-film solar cells by a layer-transfer technique, Ireland * christian.schuster@york.ac.uk Abstract: Thin film solar cells benefit significantly from, "Progress and outlook for high-efficiency crystalline silicon solar cells," Sol. Energy Mater. Sol. Cells 65

  6. Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell

    E-Print Network [OSTI]

    to bring down the cost of photovoltaic (PV) solar cells has gained huge momentum, and many strategiesOptimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic

  7. Thin-Film Active Nano-PWAS for Structural Health Monitoring , Victor Giurgiutiu1

    E-Print Network [OSTI]

    Giurgiutiu, Victor

    Thin-Film Active Nano-PWAS for Structural Health Monitoring Bin Lin1 , Victor Giurgiutiu1 , Amar S 3 University of Texas Arlington, Arlington, TX 76019 ABSTRACT Structural health monitoring (SHM is to develop the fabrication and optimum design of thin-film nano-PWAS for structural health monitoring

  8. THIN-FILM FLOWS WITH WALL SLIP: AN ASYMPTOTIC ANALYSIS OF HIGHER ORDER GLACIER FLOW MODELS

    E-Print Network [OSTI]

    Fournier, John J.F.

    THIN-FILM FLOWS WITH WALL SLIP: AN ASYMPTOTIC ANALYSIS OF HIGHER ORDER GLACIER FLOW MODELS, Cambridge, CB3 0ET, UK) [Received 6 January 2009. Revise 6 November 2009] Summary Free-surface thin film of the flow. Conversely, membrane or `free film' models are appropriate in situations where there is rapid

  9. Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices

    DOE Patents [OSTI]

    Nastasi, Michael Anthony; Wang, Yongqiang; Fraboni, Beatrice; Cosseddu, Piero; Bonfiglio, Annalisa

    2013-06-11

    Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

  10. Conductive polymer/fullerene blend thin films with honeycomb framework for transparent photovoltaic application

    DOE Patents [OSTI]

    Cotlet, Mircea; Wang, Hsing-Lin; Tsai, Hsinhan; Xu, Zhihua

    2015-04-21

    Optoelectronic devices and thin-film semiconductor compositions and methods for making same are disclosed. The methods provide for the synthesis of the disclosed composition. The thin-film semiconductor compositions disclosed herein have a unique configuration that exhibits efficient photo-induced charge transfer and high transparency to visible light.

  11. DISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS AND MODULES WITH 2-D-FILM SOLAR CELLS AND MODULES WITH 2-D SIMULATIONS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS-UNIFORMITIES ON THIN-FILM SOLAR CELLS AND MODULES WITH 2-D SIMULATIONS Clean and environmentally friendly photovoltaic

  12. Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell

    E-Print Network [OSTI]

    Grandidier, Jonathan

    Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell J. Grandidier photocurrent of the solar cell. On a typical thin film amorphous silicon solar cell, a parametric analysis of SiO2 spheres directly placed on top of a-Si [1] and gallium arsenide (GaAs) [3] solar cells. We

  13. Computational analysis of thin film InGaAs/GaAs quantum well solar cells with

    E-Print Network [OSTI]

    Yu, Edward T.

    Computational analysis of thin film InGaAs/GaAs quantum well solar cells with back side light, Austin, TX 78758, USA * ety@ece.utexas.edu Abstract: Simulations of thin film (~2.5 µm thick) InGaAs/GaAs. Roberts, G. Hill, and C. Calder, "Progress in quantum well solar cells," Thin Solid Films 511­512, 76

  14. Semiconductor heterostructures and optimization of light-trapping structures for efficient thin-film solar cells

    E-Print Network [OSTI]

    Yu, Edward T.

    and optimization of light-trapping structures for efficient thin-film solar cells Claiborne O McPheeters1 , Dongzhi elements are integrated for light trapping. Measurements and simulations of GaAs solar cells with less than in their performance. Keywords: quantum-well, quantum-dot, scattering, diffraction, thin-film, GaAs, InAs, photovoltaic

  15. The peeling behavior of thin films with finite bending stiffness and the implications on gecko adhesion

    E-Print Network [OSTI]

    . This paper assesses the influence of the bending stiffness on thin film peeling and argues that detailedThe peeling behavior of thin films with finite bending stiffness and the implications on gecko the bending stiffness of the spatula has a strong influence on the peeling force which is neglected

  16. Bending tests of carbon nanotube thin-film transistors on flexible Daniel Pham1

    E-Print Network [OSTI]

    Chen, Ray

    Bending tests of carbon nanotube thin-film transistors on flexible substrate Daniel Pham1 , Harish, San Marcos, TX 78666. ABSTRACT Bending tests of carbon nanotube thin-film transistors on flexible substrate have been characterized in this paper. The device channel consisting of dense, aligned, 99% pure

  17. Mixed-mode interfacial adhesive strength of a thin film on an anisotropic substrate

    E-Print Network [OSTI]

    Sottos, Nancy R.

    Mixed-mode interfacial adhesive strength of a thin film on an anisotropic substrate Rajesh Kiteya adhesion strength between a gold (Au) thin film and an anisotropic passivated silicon (Si) substrate delamination remain a major reliability concern as interfacial properties, in particular interfacial adhesion

  18. Growth and characterization of aligned carbon nanotubes from patterned nickel nanodots and uniform thin films

    E-Print Network [OSTI]

    Reed, Mark

    Growth and characterization of aligned carbon nanotubes from patterned nickel nanodots and uniform nanotubes grown on patterned nickel nanodots and uniform thin films by plasma-enhanced chemical vapor on patterned nickel nanodots and uniform thin films is different. During growth of carbon nanotubes, a nickel

  19. Fracture toughness of polycrystalline silicon carbide thin films J. J. Bellante and H. Kahn

    E-Print Network [OSTI]

    Ballarini, Roberto

    Fracture toughness of polycrystalline silicon carbide thin films J. J. Bellante and H. Kahn online 11 February 2005 Thin film polycrystalline silicon carbide poly-SiC doubly clamped microtensile reported, including pressure sensors,2,3 bolometers,4 resonators,5,6 and fuel atomizers;7 these were

  20. Thin-film Lithium Niobate Contour-mode Resonators Renyuan Wang and Sunil A. Bhave

    E-Print Network [OSTI]

    Afshari, Ehsan

    Thin-film Lithium Niobate Contour-mode Resonators Renyuan Wang and Sunil A. Bhave School Micro Devices, Inc. Greensboro, North Carolina, USA Abstract--This paper presents Lithium Niobate (LN this platform, we demonstrate, on a black Y136 cut Lithium Niobate thin-film, one-port high-order width