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Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Templated dewetting of thin solid films  

E-Print Network (OSTI)

The dewetting of solid metal polycrystalline films to form metal nanoparticles occurs by the nucleation and growth of holes in the film. For typical films on flat substrates, this process is not well-controlled and results ...

Giermann, Amanda L. (Amanda Leah)

2009-01-01T23:59:59.000Z

2

Nanostructured thin films for solid oxide fuel cells  

E-Print Network (OSTI)

The goals of this work were to synthesize high performance perovskite based thin film solid oxide fuel cell (TF-SOFC) cathodes by pulsed laser deposition (PLD), to study the structural, electrical and electrochemical properties of these cathodes...

Yoon, Jongsik

2009-05-15T23:59:59.000Z

3

Solid-state dewetting of continuous and patterned single crystal Ni thin films  

E-Print Network (OSTI)

Solid-state dewetting of thin films is a process through which continuous solid films agglomerate to form islands. This process is driven by capillary forces, often occurring via surface self-diffusion. Solid-state dewetting ...

Ye, Jongpil

2011-01-01T23:59:59.000Z

4

Rubbery Graft Copolymer Electrolytes for Solid-State, Thin-Film Lithium Batteries  

E-Print Network (OSTI)

Rubbery Graft Copolymer Electrolytes for Solid-State, Thin-Film Lithium Batteries Patrick E. Trapa to be stable over a wide temperature range and voltage window. Solid-state, thin-film batteries comprised triflate-doped POEM-g-PDMS, which exhibited solid-like mechanical behavior, were nearly identical to those

Sadoway, Donald Robert

5

Critical confinement and elastic instability in thin solid films  

E-Print Network (OSTI)

When a flexible plate is peeled off a thin and soft elastic film bonded to a rigid support, uniformly spaced fingering patterns develop along their line of contact. While, the wavelength of these patterns depends only on the thickness of the film, their amplitude varies with all material and geometric properties of the film and that of the adhering plate. Here we have analyzed this instability by the regular perturbation technique to obtain the excess deformations of the film over and above the base quantities. Furthermore, by calculating the excess energy of the system we have shown that these excess deformations, associated with the instability, occur for films which are critically confined. We have presented two different experiments for controlling the degree of confinement: by pre-stretching the film and by adjusting the contact width between the film and the plate.

Animangsu Ghatak; Manoj K. Chaudhury

2007-01-11T23:59:59.000Z

6

Block Copolymer Electrolytes Synthesized by Atom Transfer Radical Polymerization for Solid-State, Thin-Film  

E-Print Network (OSTI)

- cessing advantages as it is easily scalable and almost solvent-free. Solid-state, thin-film batteries, 2002. The ideal electrolyte material for a solid-state battery would have the ionic conductivity in solid-state lithium batteries, the purpose of this study was to inves- tigate the feasibility

Sadoway, Donald Robert

7

Design consideration of micro thin film solid-oxide fuel cells  

Science Journals Connector (OSTI)

Miniaturized planar solid-oxide fuel cells (SOFCs) and stacks can be fabricated by thin film deposition and micromachining. Serious thermal stresses, originating in fabrication and during operation, cause thermal–mechanical instability of the constituent thin films. In this paper, the effect of thin film geometry on thermal stress and mechanical stability is evaluated to optimize the structure of a thin film. A novel design of thin circular electrolyte films for SOFCs is presented by using corrugated structures, with which small thermal stresses and a broad design range of structure parameters can be obtained. Thermal transfer analysis shows that heat loss by solid conduction is serious in thin films with a small radius. But thermal convection and radiation dominate heat loss in large thin films with a radius of several millimetres. Scale-dependent thermal characteristics show the importance of film size and packaging in optimization of thermal isolation for micro SOFCs. A novel flip-flop stack configuration for micro SOFCs is presented. This configuration allows multiple cells to share one reaction chamber, helps to obtain uniform flow fields, and simplifies the flow field network for micro fuel cell stacks.

Yanghua Tang; Kevin Stanley; Jonathan Wu; Dave Ghosh; Jiujun Zhang

2005-01-01T23:59:59.000Z

8

Parasitic oscillation suppression in solid state lasers using absorbing thin films  

DOE Patents (OSTI)

A thin absorbing film is bonded onto at least certain surfaces of a solid state laser gain medium. An absorbing metal-dielectric multilayer film is optimized for a broad range of incidence angles, and is resistant to the corrosive/erosive effects of a coolant such as water, used in the forced convection cooling of the film. Parasitic oscillations hamper the operation of solid state lasers by causing the decay of stored energy to amplified rays trapped within the gain medium by total and partial internal reflections off the gain medium facets. Zigzag lasers intended for high average power operation require the ASE absorber.

Zapata, Luis E. (Livermore, CA)

1994-01-01T23:59:59.000Z

9

Z .Thin Solid Films 391 2001 143 148 Submicrosecond range surface heating and temperature  

E-Print Network (OSTI)

Z .Thin Solid Films 391 2001 143 148 Submicrosecond range surface heating and temperature; accepted 22 March 2001 Abstract A method for submicrosecond heating of sensor surfaces and simultaneous as well as photo thermal and scanning force microscopy measurements were performed to optimize the heating

Moritz, Werner

10

Homogeneous, dual layer, solid state, thin film deposition for structural and/or electrochemical characteristics  

DOE Patents (OSTI)

Solid state, thin film, electrochemical devices (10) and methods of making the same are disclosed. An exemplary device 10 includes at least one electrode (14) and an electrolyte (16) deposited on the electrode (14). The electrolyte (16) includes at least two homogenous layers of discrete physical properties. The two homogenous layers comprise a first dense layer (15) and a second porous layer (16).

Pitts, J. Roland; Lee, Se-Hee; Tracy, C. Edwin; Li, Wenming

2014-04-08T23:59:59.000Z

11

Thin-film heterostructure solid oxide fuel cells  

Science Journals Connector (OSTI)

A micro thin-filmsolid oxide fuel cell (TFSOFC) has been designed based on thin-filmdeposition and microlithographic processes. The TFSOFC is composed of a thin-filmelectrolyte grown on a nickel foil substrate and a thin-filmcathodedeposited on the electrolyte. The Ni foil substrate is then processed into a porous anode by photolithographic patterning and etching to develop pores for gas transport into the fuel cell. A La 0.5 Sr 0.5 CoO 3 (LSCO) thin-filmcathode is then deposited on the electrolyte and a porous NiO–YSZ cermet layer is added to the anode to improve the electrode performance. The TFSOFC has stably operated in a temperature ranges as low as 480–570?°C significantly lower than bulk SOFC’s and has yielded a maximum output power density of ?110? mW/cm 2 in that temperature range.

X. Chen; N. J. Wu; L. Smith; A. Ignatiev

2004-01-01T23:59:59.000Z

12

Conditioning effects on La1-xSrxMnO3-Yttria stabilized Zirconia electrodes for thin-film solid oxide fuel cells  

E-Print Network (OSTI)

for Thin-Film Solid Oxide Fuel Cells You-Kee Lee a, *, Jung-performance of a solid oxide fuel cell (SOFC). LSM surfacethe development of solid oxide fuel cells (SOFCs) capable of

2002-01-01T23:59:59.000Z

13

Hybrid deposition of thin film solid oxide fuel cells and electrolyzers  

DOE Patents (OSTI)

The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

1998-05-19T23:59:59.000Z

14

Hybrid deposition of thin film solid oxide fuel cells and electrolyzers  

DOE Patents (OSTI)

The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

1998-01-01T23:59:59.000Z

15

Hybrid deposition of thin film solid oxide fuel cells and electrolyzers  

DOE Patents (OSTI)

The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

1999-01-01T23:59:59.000Z

16

Solid state thin film battery having a high temperature lithium alloy anode  

DOE Patents (OSTI)

An improved rechargeable thin-film lithium battery involves the provision of a higher melting temperature lithium anode. Lithium is alloyed with a suitable solute element to elevate the melting point of the anode to withstand moderately elevated temperatures.

Hobson, David O. (Oak Ridge, TN)

1998-01-01T23:59:59.000Z

17

TAPE CALENDERING MANUFACTURING PROCESS FOR MULTILAYER THIN-FILM SOLID OXIDE FUEL CELLS  

SciTech Connect

This report summarizes the work performed by Hybrid Power Generation Systems, LLC during the Phases I and II under Contract DE-AC26-00NT40705 for the U. S. Department of Energy, National Energy Technology Laboratory (DOE/NETL) entitled ''Tape Calendering Manufacturing Process For Multilayer Thin-Film Solid Oxide Fuel Cells''. The main objective of this project was to develop the manufacturing process based on tape calendering for multilayer solid oxide fuel cells (SOFC's) using the unitized cell design concept and to demonstrate cell performance under specified operating conditions. Summarized in this report is the development and improvements to multilayer SOFC cells and the unitized cell design. Improvements to the multilayer SOFC cell were made in electrochemical performance, in both the anode and cathode, with cells demonstrating power densities of nearly 0.9 W/cm{sup 2} for 650 C operation and other cell configurations showing greater than 1.0 W/cm{sup 2} at 75% fuel utilization and 800 C. The unitized cell design was matured through design, analysis and development testing to a point that cell operation at greater than 70% fuel utilization was demonstrated at 800 C. The manufacturing process for both the multilayer cell and unitized cell design were assessed and refined, process maps were developed, forming approaches explored, and nondestructive evaluation (NDE) techniques examined.

Nguyen Minh; Kurt Montgomery

2004-10-01T23:59:59.000Z

18

Thin Film Solid-State Reactions Forming Carbides as Contact Materials for Carbon-Containing Semiconductors  

SciTech Connect

Metal carbides are good candidates to contact carbon-based semiconductors (SiC, diamond, and carbon nanotubes). Here, we report on an in situ study of carbide formation during the solid-state reaction between thin films. The solid-state reaction was examined between 11 transition metals (W, Mo, Fe, Cr, V, Nb, Mn, Ti, Ta, Zr, and Hf) and an amorphous carbon layer. Capping layers (C or TiN) of different thicknesses were applied to prevent oxidation. Carbide formation is evidenced for nine metals and the phases formed have been identified (for a temperature ranging from 100 to 1100 C). W first forms W{sub 2}C and then WC; Mo forms Mo{sub 2}C; Fe forms Fe{sub 3}C; Cr first forms metastable phases Cr{sub 2}C and Cr{sub 3}C{sub 2-x}, and finally forms Cr{sub 3}C{sub 2}; V forms VC{sub x}; Nb transforms into Nb{sub 2}C followed by NbC; Ti forms TiC; Ta first forms Ta{sub 2}C and then TaC; and Hf transforms into HfC. The activation energy for the formation of the various carbide phases has been obtained by in situ x-ray diffraction.

Leroy,W.; Detavernier, C.; Van Meirhaeghe, R.; Lavoie, C.

2007-01-01T23:59:59.000Z

19

Dendrimer-encapsulated metal nanoparticle thin films on solid surfaces: preparation, characterization, and applications to electrocatalysis  

E-Print Network (OSTI)

Dendrimer-encapsulated nanoparticles (DENs) were prepared, characterized, and immobilized on solid surfaces. The resulting films were applied as electrocatalysts for the oxygen reduction reaction (ORR). First, the synthesis, physical and chemical...

Ye, Heechang

2009-05-15T23:59:59.000Z

20

Solid state thin film battery having a high temperature lithium alloy anode  

DOE Patents (OSTI)

An improved rechargeable thin-film lithium battery involves the provision of a higher melting temperature lithium anode. Lithium is alloyed with a suitable solute element to elevate the melting point of the anode to withstand moderately elevated temperatures. 2 figs.

Hobson, D.O.

1998-01-06T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS  

SciTech Connect

This document summarizes the technical progress from April to September 2003 for the program, Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells, contract number DE-AC26-00NT40711. Characteristics of doped lanthanum gallate (LSGMF) powder suitable for thin electrolyte fabrication have been defined. Bilayers with thin LSGMF electrolyte supported on an anode were fabricated and the fabrication process was improved. Preliminary performance was characterized. High performance cathode material Sr{sub 0.5}Sm{sub 0.5}CoO{sub 3} has been down-selected and is being optimized by modifying materials characteristics and processing parameters. The selected cathode exhibited excellent performance with cathode polarization of {approx}0.23 ohm-cm{sup 2} at 600 C.

Jie Guan; Nguyen Minh

2003-10-01T23:59:59.000Z

22

MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS  

SciTech Connect

This document summarizes the technical progress from September 2002 to March 2003 for the program, Material and Process Development Leading to Economical High-Performance Thin-Film Solid Oxide Fuel Cells, contract number DE-AC26-00NT40711. The causes have been identified for the unstable open circuit voltage (OCV) and low performance exhibited by the anode-supported lanthanum gallate based cells from the earlier development. Promising results have been obtained in the area of synthesis of electrolyte and cathode powders, which showed excellent sintering and densification at low temperatures. The fabrication of cells using tapecalendering process for anode-supported thin lanthanum gallate electrolyte cells and their performance optimization is in progress.

Jie Guan; Atul Verma; Nguyen Minh

2003-04-01T23:59:59.000Z

23

Kinetics of O{sub 2} reduction on a Pt electrode covered with a thin film of solid polymer electrolyte  

SciTech Connect

The kinetics of O{sub 2} reduction on both oxidized and reduced Pt rotating disk surfaces covered with thin films (1 to 15 {micro}m) of recast polybenzimidazole (PBI) or Nafion have been examined in 0.1 M aqueous solutions of H{sub 3}PO{sub 4}, H{sub 2}SO{sub 4}, and HClO{sub 4} at 25.0 C. Polymer films were deposited on a Pt disk electrode by a spin-coating technique. Experiments were performed at different rotation rates and potential scan rates. This investigation was undertaken to establish to what extent the solid polymer electrolyte influences the mechanism and kinetics of O{sub 2} reduction. The number of electrons exchanged per O{sub 2} molecule and kinetic parameters for O{sub 2} reduction (reaction order with respect to O{sub 2}, Tafel slope/transfer coefficient, and exchange current density) are not changed in the presence of the polymer films, indicating that the reaction path and kinetics are not altered in the presence of recast PBI and Nafion films. The diffusion coefficient (D) and concentration (C) of O{sub 2} in recast films were determined by means of linear sweep voltammetry measurements in quiescent solution. The D and C values in polymer films immersed in acidic solutions were found to have different values than those in the solutions. D(O{sub 2}) is about 2.5 times lower in the recast films than in the solutions, whereas C(O{sub 2}) is slightly higher in the film. The largest concentration increase, by a factor of two, was found in PBI film in 0.1 M HClO{sub 4}. Cyclic voltammetric measurements under argon atmosphere have shown that PBI and Nafion recast films are electrochemically stable in the potential range between the onsets of H{sub 2} and O{sub 2} evolution. A decrease in the effective electrocatalyst surface area due to deposition of solid polymer films was 15 to 20%.

Zecevic, S.K.; Wainright, J.S.; Litt, M.H.; Gojkovic, S.L.; Savinell, R.F. [Case Western Reserve Univ., Cleveland, OH (United States)

1997-09-01T23:59:59.000Z

24

ThinFilms  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Films Thin Films Manufacturing Technologies The Thin Film laboratory provides a variety of vapor deposition processes and facilities for cooperative research and development. Available capabilities include electron beam evaporation, sputter deposition, reactive deposi- tion processes, atomic layer deposition (ALD) and specialized techniques such as focused ion beam induced chemical vapor deposition. Equipment can be reconfigured for prototyping, or it can be dedicated to long-term research, development and manufacturing. Most sputter and evaporative deposition systems are capable of depositing multiple materials. Deposition capabilities and expertise * Deposition of a large variety of thin film mate- rials * Multiple sputter deposition systems - Capable of depositing four materials in a

25

Microstructure, residual stress, and mechanical properties of thin film materials for a microfabricated solid oxide fuel cell  

E-Print Network (OSTI)

The microstructure and residual stress of sputter-deposited films for use in microfabricated solid oxide fuel cells are presented. Much of the work focuses on the characterization of a candidate solid electrolyte: Yttria ...

Quinn, David John, Sc. D. Massachusetts Institute of Technology

2006-01-01T23:59:59.000Z

26

Thin film hydrogen sensor  

DOE Patents (OSTI)

A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

1999-03-23T23:59:59.000Z

27

Thin film hydrogen sensor  

DOE Patents (OSTI)

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

Cheng, Yang-Tse (Rochester Hills, MI); Poli, Andrea A. (Livonia, MI); Meltser, Mark Alexander (Pittsford, NY)

1999-01-01T23:59:59.000Z

28

Thin Film Photovoltaics Research  

Energy.gov (U.S. Department of Energy (DOE))

The U.S. Department of Energy (DOE) supports research and development of four thin-film technologies on the path to achieving cost-competitive solar energy, including:

29

Low-temperature solid-phase crystallization of amorphous silicon thin films deposited by rf magnetron sputtering with substrate bias  

SciTech Connect

The crystallization properties of amorphous silicon (a-Si) thin film deposited by rf magnetron sputter deposition with substrate bias have been thoroughly characterized. The crystallization kinetics for films deposited with substrate bias is enhanced relative to unbiased a-Si by films. The enhanced crystallization for substrate biased a-Si films are attributed to ion enhanced nucleation of crystallites during sputter deposition which subsequently grow during the postdeposition anneal. Conversely films sputter deposited without substrate bias have more intrinsic defects and residual oxygen which enhance nucleation and retard growth, respectively, and lead to a large number of small crystallites.

Jun, Seung-Ik; Rack, Philip D.; McKnight, Timothy E.; Melechko, Anatoli V.; Simpson, Michael L. [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996-2200 (United States); Molecular Scale Engineering and Nanoscale Technologies Research Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

2006-07-10T23:59:59.000Z

30

Thin film photovoltaic device  

DOE Patents (OSTI)

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

Catalano, A.W.; Bhushan, M.

1982-08-03T23:59:59.000Z

31

Thin film photovoltaic device  

DOE Patents (OSTI)

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

Catalano, Anthony W. (Wilmington, DE); Bhushan, Manjul (Wilmington, DE)

1982-01-01T23:59:59.000Z

32

Z .Thin Solid Films 392 2001 231 235 Atmospheric pressure chemical vapor deposition of  

E-Print Network (OSTI)

of electrochromic tungsten oxide films Roy G. Gordona,U , Sean Barryb , Jeffrey T. Bartona , Randy N.R. Broomhall oxide, WO , is a coloring layer commonly used in electrochromic windows and displays. Successful: Chemical vapor deposition; Tungsten; Oxides; Electrochromism 1. Introduction Tungsten oxide is a key

33

NMR characterization of thin films  

DOE Patents (OSTI)

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

Gerald, II, Rex E. (Brookfield, IL); Klingler, Robert J. (Glenview, IL); Rathke, Jerome W. (Homer Glen, IL); Diaz, Rocio (Chicago, IL); Vukovic, Lela (Westchester, IL)

2008-11-25T23:59:59.000Z

34

Thin film photovoltaic cell  

DOE Patents (OSTI)

A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

Meakin, John D. (Newark, DE); Bragagnolo, Julio (Newark, DE)

1982-01-01T23:59:59.000Z

35

Modeling and control of thin film surface morphology: application to thin film solar cells  

E-Print Network (OSTI)

materials, thin film solar cell technology stands to benefitThin-film solar cells: Review of materials, technologies and

Huang, Jianqiao

2012-01-01T23:59:59.000Z

36

Thin film hydrogen sensor  

DOE Patents (OSTI)

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

Lauf, Robert J. (Oak Ridge, TN); Hoffheins, Barbara S. (Knoxville, TN); Fleming, Pamela H. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

37

Hybrid Thin Film Deposition System | EMSL  

NLE Websites -- All DOE Office Websites (Extended Search)

Hybrid Thin Film Deposition System Hybrid Thin Film Deposition System Only available at EMSL, the Discovery Deposition System has been customized to be a fully automated...

38

Thin Film Solar Technologies | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Name: Thin Film Solar Technologies Place: South Africa Product: Producers of thin-film copper, indium, gallium, sulphur, selenium modules....

39

CFN | Thin Films Group  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Synthesis and Characterization Facility Materials Synthesis and Characterization Facility Thin-Film Processing Facility Online Manager (FOM) website FOM manual ESR for lab 1L32 (High-Resolution SEM and x-ray microanalysis) CFN Operations Safety Awareness (COSA) form for 1L32 (ESR #1) Technical article on LABE detector (Analytical SEM) Request form for off-hours access (.doc, First time only, renewals done via email) Lab Tool capabilities Primary contact Training schedule Backup contact Booking calendar Booking rules SOP 1L32 Analytical SEM Camino Thurs 10-12 PM Stein FOM yes yes Hitachi S-4800 SEM Stein Tues 1-3 PM Black FOM no yes booking calendar: yes = need to reserve tool time in calendar before using tool booking rules: yes = specific rules exist for reserving tool time SOP = standard operating procedure (basic instructions)

40

Ferromagnetic thin films  

DOE Patents (OSTI)

A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

Krishnan, K.M.

1994-12-20T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface  

SciTech Connect

The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5+2)nm after SPC could be estimated.

Bar, M.; Wimmer, M.; Wilks, R. G.; Roczen, M.; Gerlach, D.; Ruske, F.; Lips, K.; Rech, B.; Weinhardt, L.; Blum, M.; Pookpanratana, S.; Krause, S.; Zhang, Y.; Heske, C.; Yang, W.; Denlinger, J. D.

2010-04-30T23:59:59.000Z

42

Thin-film Lithium Batteries  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin-Film Battery with Lithium Anode Courtesy of Oak Ridge National Laboratory, Materials Science and Technology Division Thin-Film Lithium Batteries Resources with Additional Information The Department of Energy's 'Oak Ridge National Laboratory (ORNL) has developed high-performance thin-film lithium batteries for a variety of technological applications. These batteries have high energy densities, can be recharged thousands of times, and are only 10 microns thick. They can be made in essentially any size and shape. Recently, Teledyne licensed this technology from ORNL to make batteries for medical devices including electrocardiographs. In addition, new "textured" cathodes have been developed which have greatly increased the peak current capability of the batteries. This greatly expands the potential medical uses of the batteries, including transdermal applications for heart regulation.'

43

Low work function, stable thin films  

DOE Patents (OSTI)

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

2000-01-01T23:59:59.000Z

44

Grain-size effects in nanoscaled electrolyte and cathode thin films for solid oxide fuel cells (SOFC).  

E-Print Network (OSTI)

??Due to their high energy conversion efficiencies and low emissions, Solid Oxide Fuel Cells (SOFCs) show promise as a replacement for combustion-based electrical generators at… (more)

Peters, Christoph

2009-01-01T23:59:59.000Z

45

Vertically Aligned Nanocomposite Thin Films  

E-Print Network (OSTI)

nanocomposite oxides have attracted extensive research interest. Nanocomposites consist of nanosized particles embedded in different materials matrix.8 In recent years, high quality nanocrystalline materials have shown novel physical, chemical, magnetic....................................... 9 1.2.3 Physical properties of oxide thin films........................ 12 1.2.3.1 Electrical and optical properties................. 13 1.2.3.2 Magnetism and magnetotransport properties...

Bi, Zhenxing

2012-07-16T23:59:59.000Z

46

Method of lift-off patterning thin films in situ employing phase change resists  

DOE Patents (OSTI)

Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas. The condensed solid film is heated selectively with a patterned stamp to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film. An organic semiconductor film is coated on the patterned resist film and the patterned resist film is heated to cause it to sublime away and to lift off because of the phase change.

Bahlke, Matthias Erhard; Baldo, Marc A; Mendoza, Hiroshi Antonio

2014-09-23T23:59:59.000Z

47

Structural and electrochemical characterization of two proton conducting oxide thin films for a microfabricated solid oxide fuel cell  

E-Print Network (OSTI)

The use of proton conducting oxide materials as an electrolyte offers the potential to reduce the operating temperature of a solid oxide fuel cell (SOFC), leading to improved thermal management and material compatibility. ...

Capozzoli, Peter M

2006-01-01T23:59:59.000Z

48

Thin film buried anode battery  

DOE Patents (OSTI)

A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

Lee, Se-Hee (Lakewood, CO); Tracy, C. Edwin (Golden, CO); Liu, Ping (Denver, CO)

2009-12-15T23:59:59.000Z

49

Thin Solid Films 430 (2003) 125129 0040-6090/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved.  

E-Print Network (OSTI)

for a-Si:H solar cell fabrication. In addition to photovoltaic applications, a-Si:H is also used of amorphous silicon (a-Si:H)-based photovoltaic devices, it is important to deposit high- quality a progress has been made in hydrogenated amorphous silicon (a-Si:H)-based thin film photovoltaic devices

Deng, Xunming

50

Zinc oxide thin film acoustic sensor  

SciTech Connect

This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah [Department of Physics , College of Science, Al-Mustansiriyah University, Baghdad (Iraq); Mansour, Hazim Louis [Department of Physics , College of Education, Al-Mustansiriyah University, Baghdad (Iraq)

2013-12-16T23:59:59.000Z

51

Ceramic Thin Films: Fabrication and Applications  

Science Journals Connector (OSTI)

...SPRAYED CERAMIC COATING, JOURNAL...PB1-XCAXTIO3 THIN-FILM GROWN BY...ELECTRICAL, OPTICAL, AND ELECTRO-OPTIC...fabrication and applications. | Ceramics...controlled optical switches...Ceramic coatings ofalumina...modified by the application of mechanical...material as a thin film cannot only...successive coatings. Although...respect to CVD that the...purposes. Applications of Thin Film Ceramics...

M. Sayer; K. Sreenivas

1990-03-02T23:59:59.000Z

52

Plasmonic Thin-Film Solar Cells  

Science Journals Connector (OSTI)

A combined computational-experimental study optimizing plasmon-enhanced absorption in thin film solar cells presented. We investigate the effect of different geometries where...

Pala, Ragip; White, Justin; Brongersma, Mark

53

Thin film solar energy collector  

DOE Patents (OSTI)

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

1983-11-22T23:59:59.000Z

54

Institute of Photo Electronic Thin Film Devices and Technology...  

Open Energy Info (EERE)

Institute of Photo Electronic Thin Film Devices and Technology of Nankai University Jump to: navigation, search Name: Institute of Photo-Electronic Thin Film Devices and Technology...

55

Thickness Dependency of Thin Film Samaria Doped Ceria for Oxygen...  

NLE Websites -- All DOE Office Websites (Extended Search)

Dependency of Thin Film Samaria Doped Ceria for Oxygen Sensing . Thickness Dependency of Thin Film Samaria Doped Ceria for Oxygen Sensing . Abstract: High temperature oxygen...

56

Direct Measurement of Oxygen Incorporation into Thin Film Oxides...  

NLE Websites -- All DOE Office Websites (Extended Search)

Measurement of Oxygen Incorporation into Thin Film Oxides at Room Temperature Upon Ultraviolet Phton Irradiation. Direct Measurement of Oxygen Incorporation into Thin Film Oxides...

57

Structure-stress-resistivity relationship in WTi alloy ultra-thin and thin films prepared by magnetron sputtering  

Science Journals Connector (OSTI)

WTi thin films were prepared from an alloyed target (W:Ti ? 70:30?at. %) by magnetron sputtering. Body-centered cubic W x T i 1 ? x solid solutions with a { 110 } fiber texture and columnar grains have been produced with 0.75 WTi thin films is about 60 ? 200 ? ? ? ? cm depending on the film thickness and microstructure (sputtering conditions). For both ultra-thin (9.5?nm) and thin (180?nm) films a stress transition from compressive to tensile is observed as the working pressure increases. The process-structure-property relations of the WTi ultra-thin and thin films are discussed in relation with the state of the art.

P.-O. Renault

2013-01-01T23:59:59.000Z

58

High tunability barium strontium titanate thin films for rf circuit applications  

E-Print Network (OSTI)

High tunability barium strontium titanate thin films for rf circuit applications N. K. Pervez,a) P) Large variations in the permittivity of rf magnetron sputtered thin-film barium strontium titanate have/cm. © 2004 American Institute of Physics. [DOI: 10.1063/1.1818724] Barium strontium titanate (BST) is a solid

York, Robert A.

59

Optimization of High Tunability Barium Strontium Titanate Thin Films Grown by RF Magnetron  

E-Print Network (OSTI)

Optimization of High Tunability Barium Strontium Titanate Thin Films Grown by RF Magnetron Abstract-- Barium strontium titanate is a solid solution perovskite with a field-dependent permittivity.7 MV/cm. I. INTRODUCTION In recent years there has been much interest in thin-film barium strontium

York, Robert A.

60

In situ synchrotron x-ray studies of dense thin-film strontium-doped lanthanum manganite solid oxide fuel cell cathodes.  

SciTech Connect

Using a model cathode-electrolyte system composed of epitaxial thin-films of La{sub 1-x}Sr{sub x}MnO{sub 3-{delta}} (LSM) on single crystal yttria-stabilized zirconia (YSZ), we investigated changes in the cation concentration profile in the LSM during heating and under applied potential using grazing incidence x-rays. Pulsed laser deposition (PLD) was used to grow epitaxial LSM(011) on YSZ(111). At room temperature, we find that Sr segregates to form Sr enriched nanoparticles and upon heating the sample to 700 C, Sr is slowly reincorporated into the film. We also find different amounts of Sr segregation as the X-ray beam is moved across the sample. The variation in the amount of Sr segregation is greater on the sample that has been subject to 72 hours of applied potential, suggesting that the electrochemistry plays a role in the Sr segregation.

Chang, K. C.; Ingram, B.; Kavaipatti, B.; Yildiz, B.; Hennessy, D.; Salvador, P.; Leyarovski, N.; You, H.; Carnegie Mellon Univ.; Massachusetts Inst. of Tech.

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Superfast oxygen exchange kinetics on highly epitaxial LaBaCo2O5+? thin films for intermediate temperature solid oxide fuel cells  

Science Journals Connector (OSTI)

Superfast chemical dynamics on highly epitaxial LaBaCo2O5+? (LBCO) heterostructures were systematically studied with symmetric half-cell LBCO/Gd0.2Ce0.8O2 (GCO):Y0.08Zr0.92O2 (YSZ)/LBCO heterostructures on (001) LaAlO3. The electrochemical impedance spectroscopy measurements reveal that the LBCO film electrodes have an ultralow polarization resistance as low as 0.11 ??cm2 at 600 °C in air a superfast surface exchange coefficient of 0.017 cm/s at 600° and an extremely low activation energy value of 0.49 eV. These excellent physical chemistry properties and superfast chemical dynamics on the highly epitaxial LBCO thin films are considered to be somewhat related to the structure entropy of the nano ordered oxygen vacancy structure.

Jian Liu; Gregory Collins; Ming Liu; Chonglin Chen

2013-01-01T23:59:59.000Z

62

BDS thin film damage competition  

SciTech Connect

A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

Stolz, C J; Thomas, M D; Griffin, A J

2008-10-24T23:59:59.000Z

63

MELT-MEDIATED LASER CRYSTALLIZATION OF THIN FILM NITI SHAPE MEMORY ALLOYS  

E-Print Network (OSTI)

matrix displays (e.g. LCD and OLED) as well as the active medium in thin film solar cells [4 of furnace, solid phase crystallization parameters (i.e. annealing temperature and dwell time

Yao, Y. Lawrence

64

SunShot Initiative: Thin Film Photovoltaics Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Film Photovoltaics Research Thin Film Photovoltaics Research to someone by E-mail Share SunShot Initiative: Thin Film Photovoltaics Research on Facebook Tweet about SunShot Initiative: Thin Film Photovoltaics Research on Twitter Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Google Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Delicious Rank SunShot Initiative: Thin Film Photovoltaics Research on Digg Find More places to share SunShot Initiative: Thin Film Photovoltaics Research on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Thin Film Photovoltaics Research The U.S. Department of Energy (DOE) supports research and development of

65

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY  

E-Print Network (OSTI)

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION, A. N. Tiwari Thin Film Physics Group, Laboratory for Solid State Physics, Technopark ETH-Building, Technoparkstr. 1, CH-8005 Zurich, Switzerland ABSTRACT: CdTe/CdS thin £lm solar cells have been grown by closed

Romeo, Alessandro

66

Innovative Thin Films LLC | Open Energy Information  

Open Energy Info (EERE)

Thin Films LLC Thin Films LLC Jump to: navigation, search Name Innovative Thin Films LLC Place Toledo, Ohio Zip 43607 Product Provider of altnernative energy thin film deposition technology. Coordinates 46.440613°, -122.847838° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":46.440613,"lon":-122.847838,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

67

Spatial Frequency Filtering Using Nondelineated Thin Films  

Science Journals Connector (OSTI)

We present a new approach for achieving spatial frequency filtering in the analog domain. Our device, the Thin Film Spatial Filter, is a hybrid structure which combines the strengths of analog VLSI technology with the simplicity of a continuous sheet ...

J. Mcelvain; J. Langan; A. J. Heeger

1997-10-01T23:59:59.000Z

68

Visible spectrometer utilizing organic thin film absorption  

E-Print Network (OSTI)

In this thesis, I modeled and developed a spectrometer for the visible wavelength spectrum, based on absorption characteristics of organic thin films. The device uses fundamental principles of linear algebra to reconstruct ...

Tiefenbruck, Laura C. (Laura Christine)

2004-01-01T23:59:59.000Z

69

Topotaxial growth of Ti{sub 2}AlN by solid state reaction in AlN/Ti(0001) multilayer thin films  

SciTech Connect

The formation of Ti{sub 2}AlN by solid state reaction between layers of wurtzite-AlN and {alpha}-Ti was characterized by in situ x-ray scattering. The sequential deposition of these layers by dual magnetron sputtering onto Al{sub 2}O{sub 3}(0001) at 200 deg. C yielded smooth, heteroepitaxial (0001) oriented films, with abrupt AlN/Ti interfaces as shown by x-ray reflectivity and Rutherford backscattering spectroscopy. Annealing at 400 deg. C led to AlN decomposition and diffusion of released Al and N into the Ti layers, with formation of Ti{sub 3}AlN. Further annealing at 500 deg. C resulted in a phase transformation into Ti{sub 2}AlN(0001) after only 5 min.

Hoeglund, C.; Beckers, M.; Schell, N.; Borany, J. v.; Birch, J.; Hultman, L. [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linkoeping University, S-581 83 Linkoeping (Sweden); GKSS Research Center Geesthacht, Max-Planck-Str. 1, D-21502 Geesthacht (Germany); Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, D-01314 Dresden (Germany); Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linkoeping University, S-581 83 Linkoeping (Sweden)

2007-04-23T23:59:59.000Z

70

Thin-film Rechargeable Lithium Batteries  

DOE R&D Accomplishments (OSTI)

Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

Dudney, N. J.; Bates, J. B.; Lubben, D.

1995-06-00T23:59:59.000Z

71

Thin film absorber for a solar collector  

DOE Patents (OSTI)

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, William G. (Cutchogue, NY)

1985-01-01T23:59:59.000Z

72

Peeling from a patterned thin elastic film  

E-Print Network (OSTI)

Inspired by the observation that many naturally occurring adhesives arise as textured thin films, we consider the displacement controlled peeling of a flexible plate from an incision-patterned thin adhesive elastic layer. We find that crack initiation from an incision on the film occurs at a load much higher than that required to propagate it on a smooth adhesive surface; multiple incisions thus cause the crack to propagate intermittently. Microscopically, this mode of crack initiation and propagation in geometrically confined thin adhesive films is related to the nucleation of cavitation bubbles behind the incision which must grow and coalesce before a viable crack propagates. Our theoretical analysis allows us to rationalize these experimental observations qualitatively and quantitatively and suggests a simple design criterion for increasing the interfacial fracture toughness of adhesive films.

A. Ghatak; L. Mahadevan; J. Y. Chung; M. K. Chaudhury; V. Shenoy

2004-04-29T23:59:59.000Z

73

Method for making thin polypropylene film  

DOE Patents (OSTI)

An economical method is provided for making uniform thickness polypropylene film as thin as 100 Angstroms. A solution of polypropylene dissolved in xylene is formed by mixing granular polypropylene and xylene together in a flask at an elevated temperature. A substrate, such as a glass plate or microscope slide is immersed in the solution. When the glass plate is withdrawn from the solution at a uniform rate, a thin polypropylene film forms on a flat surface area of the glass plate as the result of xylene evaporation. The actual thickness of the polypropylene film is functional of the polypropylene in xylene solution concentration, and the particular withdrawal rate of the glass plate from the solution. After formation, the thin polypropylene film is floated from the glass plate onto the surface of water, from which it is picked up with a wire hoop.

Behymer, R.D.; Scholten, J.A.

1985-11-21T23:59:59.000Z

74

SINGLE AND DUAL LAYER THIN FILM BULGE TESTING  

E-Print Network (OSTI)

film windows that are used in Next Generation Lithography masks and certain MEMS devices. The bulge testing method measures the mechanical properties of a thin film by isolating it in a thin film window of the system. Figure 6 Dual Layer Thin Film Membrane Window For a dual layer membrane the effective total

Huston, Dryver R.

75

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES  

E-Print Network (OSTI)

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES S. Suresh1 , T.-G. Nieh2 and B.W. Choi2: Mechanical properties; Nano-indentation; Thin films; Copper; Dislocations Introduction Indentation methods films on substrates (e.g., [2,3]) using instrumented indentation. Nano-indentation studies of thin films

Suresh, Subra

76

A high performance thin film thermoelectric cooler  

SciTech Connect

Thin film thermoelectric devices with small dimensions have been fabricated using microelectronics technology and operated successfully in the Seebeck mode as sensors or generators. However, they do not operate successfully in the Peltier mode as coolers, because of the thermal bypass provided by the relatively thick substrate upon which the thermoelectric device is fabricated. In this paper a processing sequence is described which dramatically reduces this thermal bypass and facilitates the fabrication of high performance integrated thin film thermoelectric coolers. In the processing sequence a very thin amorphous SiC (or SiO{sub 2}SiN{sub 4}) film is deposited on a silicon substrate using conventional thin film deposition and a membrane formed by removing the silicon substrate over a desired region using chemical etching or micro-machining. Thermoelements are deposited on the membrane using conventional thin film deposition and patterning techniques and configured so that the region which is to be cooled is abutted to the cold junctions of the Peltier thermoelements while the hot junctions are located at the outer peripheral area which rests on the silicon substrate rim. Heat is pumped laterally from the cooled region to the silicon substrate rim and then dissipated vertically through it to an external heat sink. Theoretical calculations of the performance of a cooler described above indicate that a maximum temperature difference of about 40--50K can be achieved with a maximum heat pumping capacity of around 10 milliwatts.

Rowe, D.M.; Min, G.; Volklein, F.

1998-07-01T23:59:59.000Z

77

Photovoltaic Polycrystalline Thin-Film Cell Basics | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Polycrystalline Thin-Film Cell Basics Polycrystalline Thin-Film Cell Basics Photovoltaic Polycrystalline Thin-Film Cell Basics August 20, 2013 - 2:36pm Addthis Polycrystalline thin-film cells are made of many tiny crystalline grains of semiconductor materials. The materials used in these cells have properties that are different from those of silicon. Thin-film cells have many advantages over their thick-film counterparts. For example, they use much less material. The cell's active area is usually only 1 to 10 micrometers thick, whereas thick films typically are 100 to 300 micrometers thick. Also, thin-film cells can usually be manufactured in a large-area process, which can be an automated, continuous production process. Finally, they can be deposited on flexible substrate materials. The term thin film comes from the method used to deposit the film, not from

78

Superhydrophobic Thin Film Symposium | ornl.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

Superhydrophobic Thin Film Symposium Superhydrophobic Thin Film Symposium Sep 05 2012 12:00 AM - 05:00 PM Hosted by Oak Ridge Laboratory's Partnerships Directorate and focusing on the recent LDRD Launch project work completed by Dr. Tolga Aytug and Dr. John T. Simpson (ORNL research PI's). Oak Ridge, TN Oak Ridge National Laboratory CONTACT : Email: Cassie Lopez Phone:(865) 576-9294 Add to Calendar SHARE Hosted by Oak Ridge Laboratory's Partnerships Directorate and focusing on the recent LDRD Launch project work completed by Dr. Tolga Aytug and Dr. John T. Simpson (ORNL research PI's). Purpose To share the ORNL Superhydrophonbic Thin Film technology to prospective commercial partners. Date and Time The conference will be held on the morning of Wednesday September 5th at Oak Ridge National Laboratory (ORNL) by Partnerships and Technology

79

Thin Film Transistors On Plastic Substrates  

DOE Patents (OSTI)

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

2004-01-20T23:59:59.000Z

80

Vibration welding system with thin film sensor  

DOE Patents (OSTI)

A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

2014-03-18T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

SAW determination of surface area of thin films  

DOE Patents (OSTI)

N.sub.2 adsorption isotherms are measured from thin films on SAW devices. The isotherms may be used to determine the surface area and pore size distribution of thin films.

Frye, Gregory C. (Albuquerque, NM); Martin, Stephen J. (Albuquerque, NM); Ricco, Antonio J. (Albuquerque, NM)

1990-01-01T23:59:59.000Z

82

Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown...  

NLE Websites -- All DOE Office Websites (Extended Search)

Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by Oxygen-plasma-assisted Molecular Beam Epitaxy. Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by...

83

Annealed CVD molybdenum thin film surface  

DOE Patents (OSTI)

Molybdenum thin films deposited by pyrolytic decomposition of Mo(CO).sub.6 attain, after anneal in a reducing atmosphere at temperatures greater than 700.degree. C., infrared reflectance values greater than reflectance of supersmooth bulk molybdenum. Black molybdenum films deposited under oxidizing conditions and annealed, when covered with an anti-reflecting coating, approach the ideal solar collector characteristic of visible light absorber and infrared energy reflector.

Carver, Gary E. (Tucson, AZ); Seraphin, Bernhard O. (Tucson, AZ)

1984-01-01T23:59:59.000Z

84

Thin film battery and method for making same  

DOE Patents (OSTI)

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

Bates, John B. (Oak Ridge, TN); Dudney, Nancy J. (Knoxville, TN); Gruzalski, Greg R. (Oak Ridge, TN); Luck, Christopher F. (Knoxville, TN)

1994-01-01T23:59:59.000Z

85

THIN FILM MECHANICS BULGING AND Ph.D Dissertation  

E-Print Network (OSTI)

for the intensive effort in research in materials and processing techniques. Thin film windows are window underneath. The thin film window has such a small thickness to span ratio that it can usually be considered and precision-stretching of thin film windows are examined. Bulge Testing is a method used to evaluate

Huston, Dryver R.

86

Thin-film aerogel thermal conductivity measurements via 3?  

Science Journals Connector (OSTI)

The limiting constraint in a growing number of nano systems is the inability to thermally tune devices. Silica aerogel is widely accepted as the best solid thermal insulator in existence and offers a promising solution for microelectronic systems needing superior thermal isolation. In this study, thin-film silica aerogel films varying in thickness from 250 to 1280 nm were deposited on SiO2 substrates under a variety of deposition conditions. These samples were then thermally characterized using the 3? technique. Deposition processes for depositing the 3? testing mask to the sample were optimized and it was demonstrated that thin-film aerogel can maintain its structure in common fabrication processes for microelectromechanical systems. Results indicate that thin-film silica aerogel can maintain the unique, ultra-low thermal conductivity commonly observed in bulk aerogel, with a directly measured thermal conductivity as low as 0.024 W/m-K at temperature of 295 K and pressure between 0.1 and 1 Pa.

M.L. Bauer; C.M. Bauer; M.C. Fish; R.E. Matthews; G.T. Garner; A.W. Litchenberger; P.M. Norris

2011-01-01T23:59:59.000Z

87

Thin films for solar control applications  

Science Journals Connector (OSTI)

...properly cited. Thin films for solar control applications Sapna Shrestha...performance of vacuum glazing. Solar Energy 81, 8. ( doi:10...mirrors produced by plasma ion assisted deposition. J. Non-Cryst...and cost of vacuum glazing. Solar Energy 55, 151. ( doi:10...

2010-01-01T23:59:59.000Z

88

Enhanced Thin Film Organic Photovoltaic Devices  

A novel structure design for thin film organic photovoltaic (OPV) devices provides a system for increasing the optical absorption in the active layer. The waveguided structure permits reduction of the active layer thickness, resulting in enhanced charge collection and extraction, leading to improved power conversion efficiency compared to standard OPV devices....

2014-01-10T23:59:59.000Z

89

Nuclear Instruments and Methods in Physics Research A 517 (2004) 180188 Spectral identification of thin-film-coated and solid-form  

E-Print Network (OSTI)

Nuclear Instruments and Methods in Physics Research A 517 (2004) 180­188 Spectral identification or solid-form bulk detectors. There have been many attempts to fabricate boron-based solid-form detectors as solid- form bulk detectors. Hence, a method to distinguish between the two devices is necessary

Shultis, J. Kenneth

90

Structural Studies of Al:ZnO Powders and Thin Films | Stanford Synchrotron  

NLE Websites -- All DOE Office Websites (Extended Search)

Structural Studies of Al:ZnO Powders and Thin Films Structural Studies of Al:ZnO Powders and Thin Films Monday, June 18, 2012 - 2:00pm SSRL Main Conference Room 137-322 Dr. Bridget Ingham, Associate Investigator, MacDiarmid Institute for Advanced Materials & Nanotechnology Al-doped ZnO (Al:ZnO) is a promising transparent conducting oxide. We have used complementary synchrotron and laboratory techniques to study the incorporation of Al within the ZnO lattice, and measure its effect on the crystallinity of thin films prepared by sol-gel techniques, with an aim to understand how these properties affect the film conductivity. I will present recent results from Al:ZnO powders and thin films, prepared with varying Al concentrations and calcination temperatures. Solid state 27Al NMR and ex situ X-ray diffraction (XRD) were performed on Al:ZnO

91

Characterization of Solidified Gas Thin Film Targets via Alpha Particle Energy Loss  

E-Print Network (OSTI)

A method is reported for measuring the thickness and uniformity of thin films of solidified gas targets. The energy of alpha particles traversing the film is measured and the energy loss is converted to thickness using the stopping power. The uniformity is determined by measuring the thickness at different positions with an array of sources. Monte Carlo simulations have been performed to study the film deposition mechanism. Thickness calibrations for a TRIUMF solid hydrogen target system are presented.

MUH collaboration; M. C. Fujiwara; G. A. Beer; J. L. Beveridge; J. L. Douglas; T. M. Huber; R. Jacot-Guillarmod; S. K. Kim; P. E. Knowles; A. R. Kunselman; M. Maier; G. M. Marshall; G. R. Mason; F. Mulhauser; A. Olin; C. Petitjean; T. A. Porcelli; J. Zmeskal

1996-10-06T23:59:59.000Z

92

Advanced polycrystalline silicon thin film solar cells using high rate plasma enhanced chemical vapour deposited amorphous silicon on textured glass.  

E-Print Network (OSTI)

??Solid phase crystallized polycrystalline silicon (poly-Si) thin-film solar cell on glass is an emerging Photovoltaics (PV) technology combining the robustness of crystalline Si material with… (more)

Jin, Guangyao

2010-01-01T23:59:59.000Z

93

Universality issues in surface kinetic roughening of thin solid Rodolfo Cuerno Luis Vazquez  

E-Print Network (OSTI)

Universality issues in surface kinetic roughening of thin solid films Rodolfo Cuerno Luis V´azquez Abstract Since publication of the main contributions on the theory of kinetic roughening more than fifteen roughening in many different real systems, and without a clear understanding of the reasons behind

Cuerno, Rodolfo

94

A thin film transistor driven microchannel device  

E-Print Network (OSTI)

= [8] 25 where n = 4 for the ideal case. However, based on experimental results, typical values for n are between 1 and 2.22 In any case, the larger potential drop appears at the smaller electrode. 2.4. PECVD Thin Film Silicon nitride film... can be deposited by a low-pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD). Table II shows a comparison of silicon nitride?s physical properties between two deposition methods. The PECVD silicon...

Lee, Hyun Ho

2005-02-17T23:59:59.000Z

95

Nitrogen doped zinc oxide thin film  

SciTech Connect

To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

Li, Sonny X.

2003-12-15T23:59:59.000Z

96

Thin film photovoltaic panel and method  

DOE Patents (OSTI)

A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

Ackerman, Bruce (El Paso, TX); Albright, Scot P. (El Paso, TX); Jordan, John F. (El Paso, TX)

1991-06-11T23:59:59.000Z

97

Structures for dense, crack free thin films  

DOE Patents (OSTI)

The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

Jacobson, Craig P. (Lafayette, CA); Visco, Steven J. (Berkeley, CA); De Jonghe, Lutgard C. (Lafayette, CA)

2011-03-08T23:59:59.000Z

98

Fracture patterns in thin films and multilayers Alex A. Volinsky  

E-Print Network (OSTI)

Fracture patterns in thin films and multilayers Alex A. Volinsky University of South Florida, excessive residual and externally applied stresses cause film fracture. In the case of tensile stress is the key for causing thin film fracture, either in tension, or compression, it is the influence

Volinsky, Alex A.

99

Fabrication Of Multilayered Thin Films Via Spin-Assembly  

NLE Websites -- All DOE Office Websites (Extended Search)

Fabrication Of Multilayered Thin Films Via Spin-Assembly Fabrication Of Multilayered Thin Films Via Spin-Assembly Fabrication Of Multilayered Thin Films Via Spin-Assembly A process of forming multilayer thin film heterostructures. Available for thumbnail of Feynman Center (505) 665-9090 Email Fabrication Of Multilayered Thin Films Via Spin-Assembly A process of forming multilayer thin film heterostructures is disclosed and includes applying a solution including a first water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species onto a substrate to form a first coating layer on the substrate, drying the first coating layer on the substrate, applying a solution including a second water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species

100

NREL: Photovoltaics Research - Thin Film Photovoltaic Partnership Project  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed the United States to attain world leadership in this area of solar technology. Three national R&D teams focused on thin-film semiconductor materials: amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS) and its alloys. The Module Reliability Team and Environmental Health and Safety Team were crosscutting. The teams comprised researchers from the solar industry, academia, and NREL who focused their efforts on improving materials, devices, and manufacturing processes-all

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Metal Nanoparticles Enhanced Optical Absorption in Thin Film Solar Cells  

Science Journals Connector (OSTI)

The plasmonic enhanced absorption for thin film solar cells with silver nanoparticles (NPs) deposited on top of the amorphous silicon film (a-Si:H) solar cells and embedded inside the...

Xie, Wanlu; Liu, Fang; Qu, Di; Xu, Qi; Huang, Yidong

102

Fluorination of amorphous thin-film materials with xenon fluoride  

DOE Patents (OSTI)

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

Weil, R.B.

1987-05-01T23:59:59.000Z

103

Nanoarrays for Light Management in Thin Film Solar Cells  

Science Journals Connector (OSTI)

We report the use of plasmonic and photonic nanoarray to achieve light management in thin film solar cells. Theoretical and experimental data will be presented.

Ji, Jin; Nasr, Magued B; McCutcheon, Murray W; Herring, Cy

104

Apparatus and Method for Fabricating Thin Film Devices using...  

NLE Websites -- All DOE Office Websites (Extended Search)

method for manufacturing thin-films was developed specifically for fabrication of CdSCdTe photovoltaic modules. However, this innovation should perform excellently for any...

105

Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization  

E-Print Network (OSTI)

Research, Thin-Film Photovoltaic (PV) Cells Market Analysiscost of photovoltaic systems (such as solar cells) due tosolar cells are created by depositing layers of photovoltaic

Bielecki, Anthony

2013-01-01T23:59:59.000Z

106

Partial Shading in Monolithic Thin Film PV Modules: Analysis...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

A. Alam, "Identification, Characterization and Implications of Shadow Degradation in Thin Film Solar Cells," in Reliability Physics Symposium (IRPS), 2011 IEEE International, 2011,...

107

Low-Cost Light Weigh Thin Film Solar Concentrators  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Light Weight Thin Film Solar Concentrators PI: Gani B. Ganapathi (JPLCaltech) Other Contributors: L'Garde: Art Palisoc, Gyula Greschik, Koorosh Gidanian JPL: Bill Nesmith,...

108

Thermochromic Properties of Nanocrystal-based Thin Films | The...  

NLE Websites -- All DOE Office Websites (Extended Search)

Nanocrystal-based Thin Films Functional coatings that can selectively reflect or transmit near-infrared solar radiation while maintiaining high transmittance for visible light can...

109

Polycrystalline?thin?film thermophotovoltaic cells  

Science Journals Connector (OSTI)

Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity portability silent operation absence of moving parts reduced air pollution rapid start?up high power densities potentially high conversion efficiencies choice of a wide range of heat sources employing fossil fuels biomass and even solar radiation are key advantages of TPV cells in comparison with fuel cells thermionic and thermoelectric convertors and heat engines. The potential applications of TPV systems include: remote electricity supplies transportation co?generation electric?grid independent appliances and space aerospace and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000–2000 K) black?body or selective radiators is in the 0.5–0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1?x Ga x As GaSb and Ga1?x In x Sb. Several polycrystalline thin films such as Hg1?x Cd x Te Sn1?x Cd2x Te2 and Pb1?x Cd x Te etc. have great potential for economic large?scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells e.g. 17.1% for CuIn1?x Ga x Se2 and 15.8% for CdTe. The best recombination?state density N t is in the range of 10?15–10?16 cm?3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences possibility of bandgap tailoring and use of selective emitters such as rare earth oxides (erbia holmia yttria) and rare earth?yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto?electronic (infrared detectors lasers and optical communications) technologies. Low bandgaps and larger fluences employed in TPV cells result in very high current densities which make it difficult to collect the current effectively. Techniques for laser and mechanical scribing integral interconnection and multi?junction tandem structures which have been fairly well developed for thin?film PV solar cells could be further refined for enhancing the voltages from TPV modules. Thin?film TPV cells may be deposited on metals or back?surface reflectors. Spectral control elements such as indium?tin oxide or tin oxide may be deposited directly on the TPV convertor. It would be possible to reduce the cost of TPV technologies based on single?crystal materials being developed at present to the range of US$ 2–5 per watt so as to be competitive in small to medium size commercial applications. However a further cost reduction to the range of US ¢ 35–$ 1 per watt to reach the more competitive large?scale residential consumer and hybrid?electric car markets would be possible only with the polycrystalline?thin film TPV cells.

Neelkanth G. Dhere

1996-01-01T23:59:59.000Z

110

Thin film photovoltaic device with multilayer substrate  

DOE Patents (OSTI)

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Catalano, Anthony W. (Rushland, PA); Bhushan, Manjul (Wilmington, DE)

1984-01-01T23:59:59.000Z

111

Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics  

E-Print Network (OSTI)

nanowire networks as window layers in thin film solar cells.window layer for fully solution-deposited thin filmITO) thin films by silver nanowire composite window layers

Chung, Choong-Heui

2012-01-01T23:59:59.000Z

112

Method of improving field emission characteristics of diamond thin films  

DOE Patents (OSTI)

A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

Krauss, Alan R. (Naperville, IL); Gruen, Dieter M. (Downer Grove, IL)

1999-01-01T23:59:59.000Z

113

Method of improving field emission characteristics of diamond thin films  

DOE Patents (OSTI)

A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.

Krauss, A.R.; Gruen, D.M.

1999-05-11T23:59:59.000Z

114

Apparatus for laser assisted thin film deposition  

DOE Patents (OSTI)

A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

Warner, B.E.; McLean, W. II

1996-02-13T23:59:59.000Z

115

Rechargeable thin-film lithium batteries  

SciTech Connect

Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

1993-09-01T23:59:59.000Z

116

Thin-film Rechargeable Lithium Batteries  

DOE R&D Accomplishments (OSTI)

Rechargeable thin films batteries with lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. The cathodes include TiS{sub 2}, the {omega} phase of V{sub 2}O{sub 5}, and the cubic spinel Li{sub x}Mn{sub 2}O{sub 4} with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The development of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25 C of 2 {mu}S/cm. Thin film cells have been cycled at 100% depth of discharge using current densities of 2 to 100 {mu}A/cm{sup 2}. The polarization resistance of the cells is due to the slow insertion rate of Li{sup +} ions into the cathode. Chemical diffusion coefficients for Li{sup +} ions in the three types of cathodes have been estimated from the analysis of ac impedance measurements.

Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, X.

1993-11-00T23:59:59.000Z

117

Experimental characterisations of thin film transmission line losses  

E-Print Network (OSTI)

Experimental characterisations of thin film transmission line losses D. Kim, H. Kim and Y. Eo New frequency-variant losses of planar thin film transmission lines are experimentally investigated in a broad frequency range. The fre- quency-variant transmission line parameters are accurately determined

118

Avalanches through windows: Multiscale visualization in magnetic thin films  

E-Print Network (OSTI)

Avalanches through windows: Multiscale visualization in magnetic thin films Alessandro Magni, Cornell University, Ithaca, NY 14853-2501 Abstract--The dynamics of domain walls motion in thin films dynamics, but are strongly dependent on the size of the windows chosen. Here we investigate how to properly

Sethna, James P.

119

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors  

Science Journals Connector (OSTI)

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (?-HfIZO) thin film transistors (TFTs). Co-sputtering-processed ?-HfIZO thin films have shown an amorphous phase in nature. ...

Sheng-Po Chang; San-Syong Shih

2012-01-01T23:59:59.000Z

120

Microstructure and properties of copper thin films on silicon substrates  

E-Print Network (OSTI)

copper thin films but on an expense of conductivity. This study proposes a technique to deposit high strength and high conductivity copper thin films on different silicon substrates at room temperature. Single crystal Cu (100) and Cu (111) have been grown...

Jain, Vibhor Vinodkumar

2009-05-15T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

APPLIED PHYSICS REVIEWS Erbium implanted thin film photonic materials  

E-Print Network (OSTI)

, phosphosilicate, borosilicate, and soda-lime glasses , ceramic thin films Al2O3, Y2O3, LiNbO3 , and amorphous. Phosphosilicate glass. . . . . . . . . . . . . . . . . . . . . . 7 C. Soda-lime silicate glass Er-doped thin film photonic materials is described. It focuses on oxide glasses pure SiO2

Polman, Albert

122

Advanced Thin Film Thermoelectric Systems forEfficient Air-Conditioner...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Thin Film Thermoelectric Systems forEfficient Air-Conditioners Advanced Thin Film Thermoelectric Systems forEfficient Air-Conditioners Presents recent advances in thermoelectric...

123

Issue and challenges facing rechargeable thin film lithium batteries  

Science Journals Connector (OSTI)

New materials hold the key to fundamental advances in energy conversion and storage, both of which are vital in order to meet the challenge of global warming and the finite nature of fossil fuels. Nanomaterials in particular offer unique properties or combinations of properties as electrodes and electrolytes in a range of energy devices. Technological improvements in rechargeable solid-state batteries are being driven by an ever-increasing demand for portable electronic devices. Lithium batteries are the systems of choice, offering high energy density, flexible, lightweight design and longer lifespan than comparable battery technologies. We present a brief historical review of the development of lithium-based thin film rechargeable batteries highlight ongoing research strategies and discuss the challenges that remain regarding the discovery of nanomaterials as electrolytes and electrodes for lithium batteries also this article describes the possible evolution of lithium technology and evaluates the expected improvements, arising from new materials to cell technology. New active materials under investigation and electrode process improvements may allow an ultimate final energy density of more than 500 Wh/L and 200 Wh/kg, in the next 5–6 years, while maintaining sufficient power densities. A new rechargeable battery technology cannot be foreseen today that surpasses this. This report will provide key performance results for thin film batteries and highlight recent advances in their development.

Arun Patil; Vaishali Patil; Dong Wook Shin; Ji-Won Choi; Dong-Soo Paik; Seok-Jin Yoon

2008-01-01T23:59:59.000Z

124

Thin film adhesion by nanoindentation-induced superlayers. Final report  

SciTech Connect

This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

Gerberich, William W.; Volinsky, A.A.

2001-06-01T23:59:59.000Z

125

Glow discharge plasma deposition of thin films  

DOE Patents (OSTI)

A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

Weakliem, Herbert A. (Pennington, NJ); Vossen, Jr., John L. (Bridgewater, NJ)

1984-05-29T23:59:59.000Z

126

Thin Film Femtosecond Laser Damage Competition  

SciTech Connect

In order to determine the current status of thin film laser resistance within the private, academic, and government sectors, a damage competition was started at the 2008 Boulder Damage Symposium. This damage competition allows a direct comparison of the current state of the art of high laser resistance coatings since they are tested using the same damage test setup and the same protocol. In 2009 a high reflector coating was selected at a wavelength of 786 nm at normal incidence at a pulse length of 180 femtoseconds. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials and layer count, and spectral results will also be shared.

Stolz, C J; Ristau, D; Turowski, M; Blaschke, H

2009-11-14T23:59:59.000Z

127

Method for making surfactant-templated thin films  

DOE Patents (OSTI)

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (New Orleans, LA); Fan, Hong You (Albuquerque, NM)

2010-08-31T23:59:59.000Z

128

Method for making surfactant-templated thin films  

DOE Patents (OSTI)

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

2002-01-01T23:59:59.000Z

129

Josephson junction in a thin film  

SciTech Connect

The phase difference {phi}(y) for a vortex at a line Josephson junction in a thin film attenuates at large distances as a power law, unlike the case of a bulk junction where it approaches exponentially the constant values at infinities. The field of a Josephson vortex is a superposition of fields of standard Pearl vortices distributed along the junction with the line density {phi}'(y)/2{pi}. We study the integral equation for {phi}(y) and show that the phase is sensitive to the ratio l/{Lambda}, where l={lambda}{sub J}{sup 2}/{lambda}{sub L}, {Lambda}=2{lambda}{sub L}{sup 2}/d, {lambda}{sub L}, and {lambda}{sub J} are the London and Josephson penetration depths, and d is the film thickness. For l<<{Lambda}, the vortex ''core'' of the size l is nearly temperature independent, while the phase ''tail'' scales as l{Lambda}/y{sup 2}={lambda}{sub J}2{lambda}{sub L}/d/y{sup 2}; i.e., it diverges as T{yields}T{sub c}. For l>>{Lambda}, both the core and the tail have nearly the same characteristic length l{Lambda}.

Kogan, V. G.; Dobrovitski, V. V.; Clem, J. R.; Mawatari, Yasunori; Mints, R. G.

2001-04-01T23:59:59.000Z

130

Bulge testing of single and dual layer thin films Dryver R. Huston*ab  

E-Print Network (OSTI)

to a thin film window. By comparing the pressure- displacement relation with a mechanical model, the elastic structures, such as the thin film windows that are used in Next Generation Lithography masks and certain MEMS it in a thin film window. Thin film windows are fabricated by removing the thick substrate out from underneath

Huston, Dryver R.

131

Focused ion beam specimen preparation for electron holography of electrically biased thin film solar cells  

E-Print Network (OSTI)

, biased TEM specimen, thin film solar cell, FIB Thin films of hydrogenated Si (Si:H) can be used as active for electron holography of a thin film solar cell using conventional lift-out specimen preparation and a homeFocused ion beam specimen preparation for electron holography of electrically biased thin film

Dunin-Borkowski, Rafal E.

132

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

133

Composition–Structure–Function Diagrams of Ti–Ni–Au Thin Film Shape Memory Alloys  

Science Journals Connector (OSTI)

thin films; annealing; high temperature shape memory alloys; combinatorial materials science; phase transformation ...

Pio John S. Buenconsejo; Alfred Ludwig

2014-11-04T23:59:59.000Z

134

Substrate Effect on the Melting Temperature of Thin Polyethylene Films M. Rafailovich,1,* J. Sokolov,1  

E-Print Network (OSTI)

Substrate Effect on the Melting Temperature of Thin Polyethylene Films Y. Wang,1 M. Rafailovich,1 polyethylene thin films. The Tm decreases with the film thickness decrease when the film is thinner than that the degree of crystal- linity of polyethylene (PE) remained high even in films as thin as 15 nm [5]. A novel

135

Chemical analysis of thin films at Sandia National Laboratories  

SciTech Connect

The characterization of thin films produced by chemical and physical vapor deposition requires special analytical techniques. When the average compositions of the films are required, dissolution of the thin films and measurement of the concentrations of the solubilized species is the appropriate analytical approach. In this report techniques for the wet chemical analysis of thin films of Si:Al, P/sub 2/O/sub 5/:SiO/sub 2/, B/sub 2/O/sub 3/:SiO/sub 2/, TiB/sub x/ and TaB/sub x/ are described. The analyses are complicated by the small total quantities of these analytes present in the films, the refractory characters of these analytes, and the possibility of interferences from the substrates on which the films are deposited. Etching conditions are described which dissolve the thin films without introducing interferences from the substrates. A chemical amplification technique and inductively coupled plasma atomic emission spectrometry are shown to provide the sensitivity required to measure the small total quantities (micrograms to milligrams) of analytes present. Also the chemical analysis data has been used to calibrate normal infrared absorption spectroscopy to give fast estimates of the phosphorus and/or boron dopant levels in thin SiO/sub 2/ films.

Tallant, D.R.; Taylor, E.L.

1980-05-01T23:59:59.000Z

136

Casimir effect for thin films from imperfect materials  

E-Print Network (OSTI)

We propose an approach for investigation of interaction of thin material films with quantum electrodynamic fields. Using main principles of quantum electrodynamics (locality, gauge invariance, renormalizability) we construct a single model for Casimir-like phenomena arising near the film boundary on distances much larger then Compton wavelength of the electron where fluctuations of Dirac fields are not essential. In this model the thin film is presented by a singular background field concentrated on a 2-dimensional surface. All properties of the film material are described by one dimensionless parameter. For two parallel plane films we calculate the photon propagator and the Casimir force, which appears to be dependent on film material and can be both attractive and repulsive. We consider also an interaction of plane film with point charge and straight line current. Here, besides usual results of classical electrodynamics the model predicts appearance of anomalous electric and magnetic fields.

V. N. Markov; Yu. M. Pis'mak

2006-06-04T23:59:59.000Z

137

TI--CR--AL--O thin film resistors  

DOE Patents (OSTI)

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Jankowski, Alan F. (Livermore, CA); Schmid, Anthony P. (Solana Beach, CA)

2000-01-01T23:59:59.000Z

138

Functionalized multilayer thin films for protection against acutely toxic agents  

E-Print Network (OSTI)

The recently developed practice of spraying polyelectrolyte solutions onto a substrate in order to construct thin films via the Layer-by-Layer (LbL) technique has been further investigated and extended. In this process a ...

Krogman, Kevin Christopher

2009-01-01T23:59:59.000Z

139

Laser scribing of CIGS based thin films solar cells  

Science Journals Connector (OSTI)

Laser scribing tests on CIGS based thin films solar cells have been performed. The obtained high quality incisions show that laser scribing is a valuable tool for producing low-cost...

Sozzi, Michele; Menossi, Daniele; Bosio, Alessio; Cucinotta, Annamaria; Romeo, Nicola; Selleri, Stefano

140

Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)  

SciTech Connect

This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

Not Available

2013-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

National High Magnetic Field Laboratory: Magnetic Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

recorded work with magnetic thin films took place in the 1880s and was carried out by German physicist August Kundt. Well known for his research on sound and optics, Kundts...

142

Picosecond laser ablation of nano-sized WTi thin film  

Science Journals Connector (OSTI)

Interaction of an Nd:YAG laser, operating at 532 nm wavelength and pulse duration of 40 ps, with tungsten-titanium (WTi) thin film (thickness, 190 nm)...2...were found to be sufficient for modification of the WTi

S. Petrovi?; B. Gakovi?; D. Peruško; T. Desai; D. Batani; M. ?ekada…

2009-08-01T23:59:59.000Z

143

Quasi-Reversible Oxygen Exchange of Amorphous IGZO Thin Films  

E-Print Network (OSTI)

Center In situ electrical properties of a-IGZO thin films were carried out at 200ºC as a function of carrier content vs. pO2) analysis should be applicable for studying the underlying carrier generation

Shahriar, Selim

144

Flexible, transparent thin film transistors raise hopes for flexible...  

NLE Websites -- All DOE Office Websites (Extended Search)

screens and displays. Virtually all flat-screen TVs and smartphones are made up of thin film transistors today; they form the basis of both LEDs and LCDs (liquid crystal...

145

Role of Microstructural Phenomena in Magnetic Thin Films. Final Report  

SciTech Connect

Over the period of the program we systematically varied microstructural features of magnetic thin films in an attempt to better identify the role which each feature plays in determining selected extrinsic magnetic properties. This report summarizes the results.

Laughlin, D. E.; Lambeth, D. N.

2001-04-30T23:59:59.000Z

146

Self-Assembling Process for Fabricating Tailored Thin Films  

ScienceCinema (OSTI)

A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

Sandia

2009-09-01T23:59:59.000Z

147

Self-Assembling Process for Fabricating Tailored Thin Films  

ScienceCinema (OSTI)

A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

None

2010-01-08T23:59:59.000Z

148

Initiated chemical vapor deposition of functional polyacrylic thin films  

E-Print Network (OSTI)

Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

Mao, Yu, 1975-

2005-01-01T23:59:59.000Z

149

Direct printing of lead zirconate titanate thin films  

E-Print Network (OSTI)

Thus far, use of lead zirconate titanate (PZT) in MEMS has been limited due to the lack of process compatibility with existing MEMS manufacturing techniques. Direct printing of thin films eliminates the need for photolithographic ...

Bathurst, Stephen, 1980-

2008-01-01T23:59:59.000Z

150

A Review of Thin Film Silicon for Solar Cell Applications  

E-Print Network (OSTI)

A Review of Thin Film Silicon for Solar Cell Applications May 99 Contents 1 Introduction 3 2 Low 2.2.3 Deposition onto foreign substrates with the intention of improving crystallographic nature Field Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 11

151

Peeling Back the Layers of Thin Film Structure and Chemistry  

NLE Websites -- All DOE Office Websites (Extended Search)

July 10, 2014 Bookmark and Share The layer-by-layer analysis of the concentration of strontium within a 40-angstrom thick (La, Sr)CoO thin film applied to a SiTiO3 substrate....

152

Thin diamond films provide new material for micro-machines |...  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin diamond films provide new material for micro-machines By Jared Sagoff * July 31, 2014 Tweet EmailPrint ARGONNE, Ill. - Airbags, inkjet printers and video projectors may not...

153

Modeling of thin-film solar thermoelectric generators  

E-Print Network (OSTI)

Recent advances in solar thermoelectric generator (STEG) performance have raised their prospect as a potential technology to convert solar energy into electricity. This paper presents an analysis of thin-film STEGs. ...

Weinstein, Lee Adragon

154

Monolithic integration of thin-film coolers with optoelectronic devices  

E-Print Network (OSTI)

Monolithic integration of thin-film coolers with optoelectronic devices Christopher La Barbara, California 93106-9560 Abstract. Active refrigeration of optoelectronic components through the use manuscript received June 30, 2000; accepted for publication June 30, 2000. 1 Introduction Optoelectronic

155

Enabling integration of vapor-deposited polymer thin films  

E-Print Network (OSTI)

Initiated Chemical Vapor Deposition (iCVD) is a versatile, one-step process for synthesizing conformal and functional polymer thin films on a variety of substrates. This thesis emphasizes the development of tools to further ...

Petruczok, Christy D. (Christy Danielle)

2014-01-01T23:59:59.000Z

156

Properties and sensor performance of zinc oxide thin films  

E-Print Network (OSTI)

Reactively sputtered ZnO thin film gas sensors were fabricated onto Si wafers. The atmosphere dependent electrical response of the ZnO micro arrays was examined. The effects of processing conditions on the properties and ...

Min, Yongki, 1965-

2003-01-01T23:59:59.000Z

157

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network (OSTI)

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

158

Thin, Free-Standing Films For High Resolution Neutron Imaging.  

E-Print Network (OSTI)

??Thin, free-standing boro-phosphosilicate glass (BPSG) films were fabricated at PSU Nanofab to serve as prototype neutron converters for a proposed high resolution neutron imaging system… (more)

Trivelpiece, Cory

2010-01-01T23:59:59.000Z

159

Magnetic Skyrmion Phase in MnSi Thin Films.  

E-Print Network (OSTI)

??Detailed magnetometry and polarized neutron reflectometry studies were conducted on MnSi thin films grown epitaxially on Si(111) substrates. It is demonstrated that with an in-plane… (more)

Wilson, Murray

2013-01-01T23:59:59.000Z

160

Photo-Alignment Behavior of Mesoporous Silica Thin Films Synthesized on a Photo-Cross-Linkable Polymer Film  

Science Journals Connector (OSTI)

Photo-Alignment Behavior of Mesoporous Silica Thin Films Synthesized on a Photo-Cross-Linkable Polymer Film ... Photo-aligning and micropatterning techniques for mesochannels of a silica thin film using a photo-cross-linkable polymer film with a cinnamoyl group are proposed. ... We propose herein a new photo-aligning and micropatterning technique for mesochannels of a silica thin film using a photo-cross-linkable polymer film with a cinnamoyl group. ...

Haruhiko Fukumoto; Shusaku Nagano; Nobuhiro Kawatsuki; Takahiro Seki

2006-02-11T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Thin-film fiber optic hydrogen and temperature sensor system  

DOE Patents (OSTI)

The invention discloses a sensor probe device for monitoring of hydrogen gas concentrations and temperatures by the same sensor probe. The sensor probe is constructed using thin-film deposition methods for the placement of a multitude of layers of materials sensitive to hydrogen concentrations and temperature on the end of a light transparent lens located within the sensor probe. The end of the lens within the sensor probe contains a lens containing a layer of hydrogen permeable material which excludes other reactive gases, a layer of reflective metal material that forms a metal hydride upon absorbing hydrogen, and a layer of semi-conducting solid that is transparent above a temperature dependent minimum wavelength for temperature detection. The three layers of materials are located at the distal end of the lens located within the sensor probe. The lens focuses light generated by broad-band light generator and connected by fiber-optics to the sensor probe, onto a reflective metal material layer, which passes through the semi-conducting solid layer, onto two optical fibers located at the base of the sensor probe. The reflected light is transmitted over fiber optic cables to a spectrometer and system controller. The absence of electrical signals and electrical wires in the sensor probe provides for an elimination of the potential for spark sources when monitoring in hydrogen rich environments, and provides a sensor free from electrical interferences. 3 figs.

Nave, S.E.

1998-07-21T23:59:59.000Z

162

Understanding Thin Film Structure for the Rational Design of  

NLE Websites -- All DOE Office Websites (Extended Search)

Understanding Thin Film Structure for the Rational Design of Understanding Thin Film Structure for the Rational Design of High-performance Organic Semiconductors for Plastic Electronics Organic semiconductors are attracting considerable research interest due to their potential applications in low-cost electronics such as organic light emitting diode (OLED) displays, RF identification tags (RFID), smart cards and electronic paper. The development of p-conjugated materials, which are composed of alternating single and double chemical bonds, are the foundation of these applications. In the past decade research in this field has progressed to the extent that desirable charge transport in the organic semiconductor film in organic thin film transistors (OTFT) can be achieved through molecular design by selective placement of electron-rich, electron-withdrawing, and aromatic groups in different parts of the molecule. Although the electronic properties are easily tuned by molecular design, the molecular packing within the thin film and the film microstructure have a significant influence on the OTFT performance. Despite this importance, this interrelationship between molecular structure, thin film molecular packing and charge transport are only poorly understood.

163

Geometric shape control of thin film ferroelectrics and resulting structures  

DOE Patents (OSTI)

A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

164

Author's personal copy Magnetotransport properties of thin CFe films  

E-Print Network (OSTI)

Author's personal copy Magnetotransport properties of thin C­Fe films J.C. Prestigiacomo a , K The magnetotransport properties of C­Fe films formed by e-beam vapor deposition onto glass substrates are presented, and metastable iron carbide CFe3 [1]. In practice, varying compositions of metastable phases can be trapped via

Adams, Philip W.

165

Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell  

E-Print Network (OSTI)

We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

Li, Tong; Jiang, Chun

2010-01-01T23:59:59.000Z

166

Formation and ferromagnetic properties of FeSi thin films  

SciTech Connect

In this work, the growth and ferromagnetic properties of {epsilon}-FeSi thin film on Si(100) substrate prepared by molecular beam epitaxy are reported. The inter-diffusion of Fe layer on Si(100) substrate at 600 Degree-Sign C results in polycrystalline {epsilon}-FeSi layer. The determined activation energy was 0.044 eV. The modified magnetism from paramagnetic in bulk to ferromagnetic states in {epsilon}-FeSi thin films was observed. The saturated magnetization and coercive field of {epsilon}-FeSi film are 4.6 emu/cm{sup 3} and 29 Oe at 300 K, respectively.

Shin, Yooleemi; Anh Tuan, Duong; Hwang, Younghun; Viet Cuong, Tran; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of)

2013-05-07T23:59:59.000Z

167

Shape variation of micelles in polymer thin films  

SciTech Connect

The equilibrium properties of block copolymer micelles confined in polymer thin films are investigated using self-consistent field theory. The theory is based on a model system consisting of AB diblock copolymers and A homopolymers. Two different methods, based on the radius of gyration tensor and the spherical harmonics expansion, are used to characterize the micellar shape. The results reveal that the morphology of micelles in thin films depends on the thickness of the thin films and the selectivity of the confining surfaces. For spherical (cylindrical) micelles, the spherical (cylindrical) symmetry is broken by the presence of the one-dimensional confinement, whereas the top-down symmetry is broken by the selectivity of the confining surfaces. Morphological transitions from spherical or cylindrical micelles to cylinders or lamella are predicted when the film thickness approaches the micellar size.

Zhou, Jiajia, E-mail: zhou@uni-mainz.de; Shi, An-Chang, E-mail: shi@mcmaste.ca [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)] [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)

2014-01-14T23:59:59.000Z

168

Thin-film transistors based on p-type Cu{sub 2}O thin films produced at room temperature  

SciTech Connect

Copper oxide (Cu{sub 2}O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu{sub 2}O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm{sup 2}/V s and an on/off ratio of 2x10{sup 2}.

Fortunato, Elvira; Figueiredo, Vitor; Barquinha, Pedro; Elamurugu, Elangovan; Goncalves, Goncalo; Martins, Rodrigo [Departamento de Ciencia dos Materiais, CENIMAT/I3N, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, 2829-516 Caparica (Portugal); Barros, Raquel [Departamento de Ciencia dos Materiais, CENIMAT/I3N, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, 2829-516 Caparica (Portugal); Materiais Avancados, INNOVNANO, SA, 7600-095 Aljustrel (Portugal); Park, Sang-Hee Ko; Hwang, Chi-Sun [Electronic and Telecommunications Research Institute, 138 Gajeongro, Yuseong-gu, Daejeon, 305-700 (Korea, Republic of)

2010-05-10T23:59:59.000Z

169

Thin film seeds for melt processing textured superconductors for practical applications  

DOE Patents (OSTI)

A method of fabricating bulk superconducting material such as RBa.sub.2 Cu.sub.3 O.sub.7-.delta. where R is La or Y comprising depositing a thin epitaxially oriented film of Nd or Sm (123) on an oxide substrate. The powder oxides of RBa.sub.2 Cu.sub.3 O.sub.7-.delta. or oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa.sub.2 Cu.sub.3 O.sub.7-.delta., where R is Y or La are heated, in physical contact with the thin film of Nd or Sm (123) on the oxide substrate to a temperature sufficient to form a liquid phase in the oxide or carbonate mixture while maintaining the thin film solid to grow a large single domain 123 superconducting material. Then the material is cooled. The thin film is between 200 .ANG. and 2000 .ANG.. A construction prepared by the method is also disclosed.

Veal, Boyd W. (Downers Grove, IL); Paulikas, Arvydas (Downers Grove, IL); Balachandran, Uthamalingam (Hinsdale, IL); Zhong, Wei (West Lafayette, IN)

1999-01-01T23:59:59.000Z

170

Photoresponse of Tb{sup 3+} doped phosphosilicate thin films  

SciTech Connect

Phosphosilicate ceramic was doped with Tb{sup 3+} using sol-gel technique to prepare thin films. The films were prepared by spin coating the phosphosilicate sols on SiO{sub x}/indium-tin-oxide/glass substrates. The photocurrent of the films at 355 nm laser excitation was observed. The photoresponse as a function of applied field and laser energy was linear and showed no sign of saturation. The films exhibited very stable photoresponse under a very high number of laser shots.

Lee, B.L.; Cao, Z. [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering] [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering; Sisk, W.N.; Hudak, J. [Univ. of North Carolina, Charlotte, NC (United States)] [Univ. of North Carolina, Charlotte, NC (United States); Samuels, W.D.; Exarhos, G.J. [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science] [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science

1997-09-01T23:59:59.000Z

171

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

172

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

173

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

174

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

175

Biocompatibility of Pristine Graphene Monolayers, Nanosheets and Thin Films  

E-Print Network (OSTI)

There is an increasing interest to develop nanoscale biocompatible graphene structures due to their desirable physicochemical properties, unlimited application opportunities and scalable production. Here we report the preparation, characterization and biocompatibility assessment of novel graphene flakes and their enabled thin films suitable for a wide range of biomedical and electronic applications. Graphene flakes were synthesized by a chemical vapour deposition method or a liquid-phase exfoliation procedure and then thin films were prepared by transferring graphene onto glass coverslips. Raman spectroscopy and transmission electron microscopy confirmed a predominantly monolayer and a high crystalline quality formation of graphene. The biocompatibility assessment of graphene thin films and graphene flakes was performed using cultured human lung epithelial cell line A549 employing a multimodal approach incorporating automated imaging, high content screening, real-time impedance sensing in combination with bio...

Conroy, Jennifer; Smith, Ronan J; Rezvani, Ehsan; Duesberg, Georg S; Coleman, Jonathan N; Volkov, Yuri

2014-01-01T23:59:59.000Z

176

Electrochromism in copper oxide thin films  

E-Print Network (OSTI)

by a variety of routes, and electrochromic behavior has beenof Cu x O films, electrochromic devices based onbeen investigated. Unlike electrochromic devices based on

Richardson, Thomas J.; Slack, Jonathan L.; Rubin, Michael D.

2000-01-01T23:59:59.000Z

177

Surface acoustic wave interaction with thin magnetic films  

Science Journals Connector (OSTI)

It has been found that surface acoustic waves(SAW) exhibit a very large interaction with appropriately prepared thin magnetic films through the magnetoelasticeffect. For a 600 Å 90Ni 10Fe thin film the interaction can produce changes in attenuation of 30 dB/cm at 700 MHz by changing from 2 to 12 G a magnetic field applied parallel to the film plane and perpendicular to the SAW.Measurements of the frequency dependence of this large effect yield values for the Gilbert damping constant and the anisotropy field. This interaction has been studied in the series of xNi (1 ? x)Fe alloy films. For x > 80 wt % the magnetoelastic constant ? is negative. It is positive for x Science Foundation under Grant No. ESC 8519695.

Moises Levy; Roy Wiegert

1986-01-01T23:59:59.000Z

178

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents (OSTI)

A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

1998-02-03T23:59:59.000Z

179

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents (OSTI)

A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

Mitlitsky, Fred (Livermore, CA); Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Colella, Nicholas J. (Livermore, CA)

1998-02-03T23:59:59.000Z

180

Thin-film tin oxideâ??ethanol sensor  

Science Journals Connector (OSTI)

Tin Oxide (SnO2) thin films grown on glass substrate at 648 K using direct evaporation method with two gold pads deposited on the top for electrical contacts were exposed to ethanol vapours (200-1000 ppm). The operating temperature of the sensor was optimised. The sensitivity variation of films having different thicknesses was studied. To improve the sensitivity and selectivity further, a thin layer of metal oxide was deposited on the sensor surface to work as a catalytic layer and its effect on the performance of the sensor was studied. The response and recovery times of the sensor were determined.

H.J. Pandya

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Thin film reactions on alloy semiconductor substrates  

SciTech Connect

The interactions between Pt and In{sub .53}Ga{sub .47}As have been studied. In{sub .53}Ga{sub .47}As substrates with 70nm Pt films were encapsulated in SiO{sub 2}, and annealed up to 600{degree}C in flowing forming gas. The composition and morphology of the reaction product phases were studied using x-ray diffraction, Auger depth profiling, and transmission electron microscopy. The reaction kinetics were examined with Rutherford Backscattering. Results show that Pt/In{sub .53}Ga{sub .47}As reacts to form many of the reaction products encountered in the Pt/GaAs and Pt/InP reactions: PtGa, Pt{sub 3}Ga, and PtAs{sub 2}. In addition, a ternary phase, Pt(In:Ga){sub 2}, develops, which is a solid solution between PtIn{sub 2} and PtGa{sub 2}. The amount of Ga in the ternary phase increases with annealing temperature, which causes a decrease in the lattice parameter of the phase. The reaction products show a tendency to form layered structures, especially for higher temperatures and longer annealing times. Unlike the binary case, the PtAs{sub 2}, phase is randomly oriented on the substrate, and is intermingle with a significant amount of Pt(In:Ga){sub 2}. Following Pt/In{sub .53}Ga{sub .47}As reactions, two orientation relationships between the Pt(In:Ga){sub 2} product phase and the substrate were observed, despite the large mismatch with the substrate ({approximately}8%). For many metal/compound semiconductor interactions, the reaction rate is diffusion limited, i.e. exhibits a parabolic dependence on time. An additional result of this study was the development of an In-rich layer beneath the reacted layer. The Auger depth profile showed a substantial increase in the sample at this layer. This is a significant result for the production of ohmic contacts, as the Schottky barrier height in this system lower for higher In concentrations. 216 refs.

Olson, D.A.

1990-11-01T23:59:59.000Z

182

Perovskite phase thin films and method of making  

DOE Patents (OSTI)

The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

Boyle, Timothy J. (Albuquerque, NM); Rodriguez, Mark A. (Albuquerque, NM)

2000-01-01T23:59:59.000Z

183

Two-color Laser Desorption of Nanostructured MgO Thin Films....  

NLE Websites -- All DOE Office Websites (Extended Search)

Two-color Laser Desorption of Nanostructured MgO Thin Films. Two-color Laser Desorption of Nanostructured MgO Thin Films. Abstract: Neutral magnesium atom emission from...

184

Initiated chemical vapor deposition of polymeric thin films : mechanism and applications  

E-Print Network (OSTI)

Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness ...

Chan, Kelvin, Ph. D. Massachusetts Institute of Technology

2005-01-01T23:59:59.000Z

185

Anisotropic dewetting in ultra-thin single-crystal silicon-on-insulator films  

E-Print Network (OSTI)

The single crystal silicon-on-insulator thin film materials system represents both an ideal model system for the study of anisotropic thin film dewetting as well as a technologically important system for the development ...

Danielson, David T. (David Thomas)

2008-01-01T23:59:59.000Z

186

Trend Detection on Thin-Film Solar Cell Technology Using Cluster Analysis and Modified Data Crystallization  

Science Journals Connector (OSTI)

Thin-film solar cell, one of green energies, is growing ... . To detect the potential trends of this technology is essential for companies and relevant industries ... patterns, the potential trends of thin-film solar

Tzu-Fu Chiu; Chao-Fu Hong; Yu-Ting Chiu

2010-01-01T23:59:59.000Z

187

Thin-film solar cells: review of materials, technologies and commercial status  

Science Journals Connector (OSTI)

As apparent from Table 1..., showing the production volume for different manufacturers of these thin-film technologies over the past 3 years, rapidly-growing ... are also increasing rapidly, the thin-film technologies

Martin A. Green

2007-10-01T23:59:59.000Z

188

Quench Properties and Fault Current Limiters of YBCO Thin-Film Superconductors  

Science Journals Connector (OSTI)

We measured the current dependence of quench propagation velocities in strip-shaped YBCO thin films and the current-limiting properties of fault current limiters consisting of a YBCO thin film and ... -300 cm/sec...

Hiroshi Kubota; Yuki Kudo; Mutsuki Yamazaki…

1998-01-01T23:59:59.000Z

189

E-Print Network 3.0 - advanced thin film Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

half of all glass... cells by absorbing light within a specific wavelength. Today's thin-film solar cells could not function... , but static, layer of a thin-film pho- tovoltaic...

190

High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing  

E-Print Network (OSTI)

One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

191

Influence of samaria doping on the resistance of ceria thin films...  

NLE Websites -- All DOE Office Websites (Extended Search)

doping on the resistance of ceria thin films and its implications to the planar oxygen sensing devices. Influence of samaria doping on the resistance of ceria thin films and...

192

Growth of Epitaxial Thin Pd(111) Films on Pt(111) and Oxygen...  

NLE Websites -- All DOE Office Websites (Extended Search)

Growth of Epitaxial Thin Pd(111) Films on Pt(111) and Oxygen-Terminated FeO(111) Surfaces . Growth of Epitaxial Thin Pd(111) Films on Pt(111) and Oxygen-Terminated FeO(111)...

193

Generation of low work function, stable compound thin films by laser ablation  

DOE Patents (OSTI)

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

2001-01-01T23:59:59.000Z

194

Preparation of a semiconductor thin film  

DOE Patents (OSTI)

A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, Martin (TuBingen, DE); Schulz, Douglas L. (Denver, CO); Curtis, Calvin J. (Lakewood, CO); Ginley, David S. (Evergreen, CO)

1998-01-01T23:59:59.000Z

195

Preparation of a semiconductor thin film  

DOE Patents (OSTI)

A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Ginley, D.S.

1998-01-27T23:59:59.000Z

196

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

SciTech Connect

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

197

Highly conductive p-type microcrystalline silicon thin films  

SciTech Connect

In the development of thin film solar cells there is presently an increasing interest in microcrystalline silicon, deposited at low temperatures (200--400 C). The plasma deposition of boron doped microcrystalline films was optimized with respect to crystallinity and doping efficiency. High room temperature conductivities up to 39 Scm{sup {minus}1} were achieved under condition when the energy of positive ions impinging on the growth surface is minimized.

Heintze, M.; Schmitt, M. [Univ. Stuttgart (Germany). Inst. fuer Physikalische Elektronik

1996-12-31T23:59:59.000Z

198

Method for producing high quality thin layer films on substrates  

DOE Patents (OSTI)

A method for producing high quality, thin layer films of inorganic compounds upon the surface of a substrate is disclosed. The method involves condensing a mixture of preselected molecular precursors on the surface of a substrate and subsequently inducing the formation of reactive species using high energy photon or charged particle irradiation. The reactive species react with one another to produce a film of the desired compound upon the surface of the substrate.

Strongin, Myron (Center Moriches, NY); Ruckman, Mark (Middle Island, NY); Strongin, Daniel (Port Jefferson, NY)

1994-01-01T23:59:59.000Z

199

Method for producing high quality thin layer films on substrates  

DOE Patents (OSTI)

A method for producing high quality, thin layer films of inorganic compounds upon the surface of a substrate is disclosed. The method involves condensing a mixture of preselected molecular precursors on the surface of a substrate and subsequently inducing the formation of reactive species using high energy photon or charged particle irradiation. The reactive species react with one another to produce a film of the desired compound upon the surface of the substrate. 4 figures.

Strongin, M.; Ruckman, M.; Strongin, D.

1994-04-26T23:59:59.000Z

200

Fabrication and testing of thermoelectric thin film devices  

SciTech Connect

Two thin-film thermoelectric devices are experimentally demonstrated. The relevant thermal loads on the cold junction of these devices are determined. The analytical form of the equation that describes the thermal loading of the device enables one to model the performance based on the independently measured electronic properties of the films forming the devices. This model elucidates which parameters determine device performance, and how they can be used to maximize performance.

Wagner, A.V.; Foreman, R.J.; Summers, L.J.; Barbee, T.W. Jr.; Farmer, J.C. [Lawrence Livermore National Lab., CA (United States). Chemistry and Materials Science Dept.

1996-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Nonequilibrium behavior of thin polymer films  

Science Journals Connector (OSTI)

The rheological behavior of 100-nm-thick polystyrene films cast from various solvents was examined using an electric field to weakly perturb the free surface of the polymer melt. The effective viscosity and residual stresses of the as-spun films are seen to strongly depend on the properties of the casting solvent and the solvent quality. Both effects are explained in terms of the coil dimension at the solvent-polymer composition at which the film vitrifies. The more compact chains in a near-?-solvent are less entangled and less deformed when quenched to the dry melt compared to the more swollen chains in an athermal solution. Despite chain conformations that are further from equilibrium for the ?-solvent cast chains, these films have reduced stored stresses compared to the chains cast in films from athermal solvents. A more detailed analysis of the data suggests that the formation of a surface-near region with more strongly deformed chains during spin coating. Since thermal equilibration of spin-cast high-molecular-weight films is unpractical, solvent vapor annealing was used to equilibrate films on timescale of a few hours.

Katherine R. Thomas; Alexis Chenneviere; Günter Reiter; Ullrich Steiner

2011-02-28T23:59:59.000Z

202

B{sub 4}C thin films for neutron detection  

SciTech Connect

Due to the very limited availability of {sup 3}He, new kinds of neutron detectors, not based on {sup 3}He, are urgently needed. Here, we present a method to produce thin films of {sup 10}B{sub 4}C, with maximized detection efficiency, intended to be part of a new generation of large area neutron detectors. B{sub 4}C thin films have been deposited onto Al-blade and Si wafer substrates by dc magnetron sputtering from {sup nat}B{sub 4}C and {sup 10}B{sub 4}C targets in an Ar discharge, using an industrial deposition system. The films were characterized with scanning electron microscopy, elastic recoil detection analysis, x-ray reflectivity, and neutron radiography. We show that the film-substrate adhesion and film purity are improved by increased substrate temperature and deposition rate. A deposition rate of 3.8 A/s and substrate temperature of 400 deg. C result in films with a density close to bulk values and good adhesion to film thickness above 3 {mu}m. Boron-10 contents of almost 80 at. % are obtained in 6.3 m{sup 2} of 1 {mu}m thick {sup 10}B{sub 4}C thin films coated on Al-blades. Initial neutron absorption measurements agree with Monte Carlo simulations and show that the layer thickness, number of layers, neutron wavelength, and amount of impurities are determining factors. The study also shows the importance of having uniform layer thicknesses over large areas, which for a full-scale detector could be in total {approx}1000 m{sup 2} of two-side coated Al-blades with {approx}1 {mu}m thick {sup 10}B{sub 4}C films.

Hoeglund, Carina [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linkoeping University, SE-581 83 Linkoeping (Sweden); Birch, Jens; Jensen, Jens; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linkoeping University, SE-581 83 Linkoeping (Sweden); Andersen, Ken; Hall-Wilton, Richard [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Bigault, Thierry; Buffet, Jean-Claude; Correa, Jonathan; Esch, Patrick van; Guerard, Bruno; Piscitelli, Francesco [Institute Laue Langevin, Rue Jules Horowitz, FR-380 00 Grenoble (France); Khaplanov, Anton [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Institute Laue Langevin, Rue Jules Horowitz, FR-380 00 Grenoble (France); Vettier, Christian [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); European Synchrotron Radiation Facility, BP 220, FR-380 43 Grenoble Cedex 9 (France); Vollenberg, Wilhelmus [Vacuum, Surfaces and Coatings Group (TE/VSC), CERN, CH-1211 Geneva 23 (Switzerland)

2012-05-15T23:59:59.000Z

203

B4C thin films for neutron detection  

Science Journals Connector (OSTI)

Due to the very limited availability of 3He new kinds of neutron detectors not based on 3He are urgently needed. Here we present a method to produce thin films of 10B4C with maximized detection efficiency intended to be part of a new generation of large area neutron detectors. B4C thin films have been deposited onto Al-blade and Si wafer substrates by dc magnetron sputtering from natB4C and 10B4C targets in an Ar discharge using an industrial deposition system. The films were characterized with scanning electron microscopy elastic recoil detection analysis x-ray reflectivity and neutron radiography. We show that the film-substrate adhesion and film purity are improved by increased substrate temperature and deposition rate. A deposition rate of 3.8?Å/s and substrate temperature of 400?°C result in films with a density close to bulk values and good adhesion to film thickness above 3 ?m. Boron-10 contents of almost 80 at. % are obtained in 6.3 m2 of 1 ?m thick 10B4C thin films coated on Al-blades. Initial neutron absorption measurements agree with Monte Carlo simulations and show that the layer thickness number of layers neutron wavelength and amount of impurities are determining factors. The study also shows the importance of having uniform layer thicknesses over large areas which for a full-scale detector could be in total ?1000 m2 of two-side coated Al-blades with ?1 ?m thick 10B4C films.

Carina Höglund; Jens Birch; Ken Andersen; Thierry Bigault; Jean-Claude Buffet; Jonathan Correa; Patrick van Esch; Bruno Guerard; Richard Hall-Wilton; Jens Jensen; Anton Khaplanov; Francesco Piscitelli; Christian Vettier; Wilhelmus Vollenberg; Lars Hultman

2012-01-01T23:59:59.000Z

204

Enhanced quantum efficiency of amorphous silicon thin film solar cells with the inclusion of a rear-reflector thin film  

SciTech Connect

We investigated the growth mechanism of amorphous silicon thin films by implementing hot-wire chemical vapor deposition and fabricated thin film solar cell devices. The fabricated cells showed efficiencies of 7.5 and 8.6% for the samples without and with the rear-reflector decomposed by sputtering, respectively. The rear-reflector enhances the quantum efficiency in the infrared spectral region from 550 to 750?nm. The more stable quantum efficiency of the sample with the inclusion of a rear-reflector than the sample without the rear-reflector due to the bias effect is related to the enhancement of the short circuit current.

Park, Seungil [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Yong Ji, Hyung; Jun Kim, Myeong; Hyeon Peck, Jong [Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Kim, Keunjoo, E-mail: kimk@chonbuk.ac.kr [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2014-02-17T23:59:59.000Z

205

An integrated thin-film thermo-optic waveguide beam deflector Suning Tang,a)  

E-Print Network (OSTI)

An integrated thin-film thermo-optic waveguide beam deflector Suning Tang,a) Bulang Li, and Xinghua for publication 16 February 2000 We have demonstrated the operation of a thin-film thermo-optical beam deflector in a three-layer optical planar waveguide. The fabricated waveguide beam deflector consists of a thin-film Si

Chen, Ray

206

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b  

E-Print Network (OSTI)

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b , Ounsi of an absorbing planar photonic crystal within a thin film photovoltaic cell. The devices are based on a stack with large areas. Keywords: Photonic crystal, Photovoltaic solar cell, Thin film solar cell, Hydrogenated

Paris-Sud XI, Université de

207

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network (OSTI)

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell hal-00749873,version1-25Nov shortage until 2010. Research on epitaxial growth for thin film crystalline silicon solar cells has gained

208

Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova*  

E-Print Network (OSTI)

1 Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova* , I be minimized throughout the fabrication process. Amorphous silicon thin-film transistors and solar cells, thin-film transistor, solar cell, flexible electronics Phone: (609) 258-4626, Fax: (609) 258-3585, E

209

EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS  

E-Print Network (OSTI)

EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS Yun Seog Lee 1; * Corresponding author: buonassisi@mit.edu; ABSTRACT We investigate earth abundant materials for thin- film solar cuprous oxide (Cu2O) as a prototype candidate for investigation as an absorber layer in thin film solar

Ceder, Gerbrand

210

LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle  

E-Print Network (OSTI)

LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle Physics response map, was developed and used to map defects in thin-film solar cells [4]. Improvements to the two) measurements are providing a direct link between the spatial non-uniformities inherent in thin-film

Sites, James R.

211

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

Sites, James R.

212

Plasmonic enhancement of thin-film solar cells using gold-black C.J. Fredricksena  

E-Print Network (OSTI)

Plasmonic enhancement of thin-film solar cells using gold-black coatings C.J. Fredricksena , D. R thin-film amorphous-silicon solar cells enhance the short-circuit current by 20% over a broad spectrum and locally enhance the field strength. Keywords: plasmonics, thin-film, solar cell, metallic nanoparticles

Peale, Robert E.

213

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell  

E-Print Network (OSTI)

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic­4]. In this context, a basic idea is to periodically texture the metallic back reflector of a thin-film solar cell

214

Extended light scattering model incorporating coherence for thin-film silicon solar cells  

E-Print Network (OSTI)

Extended light scattering model incorporating coherence for thin-film silicon solar cells Thomas film solar cells. The model integrates coherent light propagation in thin layers with a direct, non potential for light trapping in textured thin film silicon solar cells. VC 2011 American Institute

Lenstra, Arjen K.

215

Metal-black scattering centers to enhance light harvesting by thin-film solar cells  

E-Print Network (OSTI)

Metal-black scattering centers to enhance light harvesting by thin-film solar cells Deep Panjwania as scattering centers to increase the effective optical thickness of thin-film solar cells. The particular type. Gold-black was deposited on commercial thin-film solar cells using a thermal evaporator in nitrogen

Peale, Robert E.

216

Oriented niobate ferroelectric thin films for electrical and optical devices  

DOE Patents (OSTI)

Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or cyrstalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

Wessels, Bruce W. (Wilmette, IL); Nystrom, Michael J. (Chicago, IL)

2001-01-01T23:59:59.000Z

217

Control of magnetization reversal in oriented strontium ferrite thin films  

SciTech Connect

Oriented Strontium Ferrite films with the c axis orientation were deposited with varying oxygen partial pressure on Al{sub 2}O{sub 3}(0001) substrate using Pulsed Laser Deposition technique. The angle dependent magnetic hysteresis, remanent coercivity, and temperature dependent coercivity had been employed to understand the magnetization reversal of these films. It was found that the Strontium Ferrite thin film grown at lower (higher) oxygen partial pressure shows Stoner-Wohlfarth type (Kondorsky like) reversal. The relative importance of pinning and nucleation processes during magnetization reversal is used to explain the type of the magnetization reversal with different oxygen partial pressure during growth.

Roy, Debangsu, E-mail: debangsu@physics.iisc.ernet.in; Anil Kumar, P. S. [Department of Physics, Indian Institute of Science, Bangalore 560012 (India)

2014-02-21T23:59:59.000Z

218

Organic Thin Film Magnet of Nickel-Tetracyanoethylene  

SciTech Connect

Hybrid organic-inorganic materials consisting of a transition metal and an organic compound, TCNE form a unique class of organic magnets denoted by M(TCNE){sub x}(where M = transition metals, and TCNE = tetracyanoethylene). The organic thin film magnet of nickel-tetracyanoethylene, Ni(TCNE){sub x} is deposited on sputtered clean gold substrate using the physical vapor deposition (PVD) technique under ultra high vacuum (UHV) conditions at room temperature. X-ray photoelectron spectroscopy (XPS) has been used to investigate chemical and electronic properties of Ni(TCNE){sub x} film. XPS derived film thickness and stoichiometry are found to be 6 nm and 1:2 ratio between Ni and TCNE resulting Ni(TCNE){sub 2} film, respectively. In addition, XPS results do not show any signature of the presence of pure metallic Ni or Ni-clustering in the Ni(TCNE){sub x} film.

Bhatt, Pramod; Yusuf, S. M. [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

2011-07-15T23:59:59.000Z

219

Stripe Domain-Structures in a Thin Ferromagnetic Film  

E-Print Network (OSTI)

We present a theory of the stripe domain structure in a thin ferromagnetic film with single-ion easy-axis magnetic anisotropy and long-range dipole interactions, for a wide range of temperatures and applied magnetic field. The domains exist...

KASHUBA, AB; Pokrovsky, Valery L.

1993-01-01T23:59:59.000Z

220

Method of preparing thin film polymeric gel electrolytes  

DOE Patents (OSTI)

Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

Derzon, Dora K. (Albuquerque, NM); Arnold, Jr., Charles (Albuquerque, NM)

1997-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Synthesis and Characterization of Functional Nanostructured Zinc Oxide Thin Films  

E-Print Network (OSTI)

.1149/1.2357098, copyright The Electrochemical Society 65 #12;66 reduced environmental impact and a minimum undesirable inter-temperature thin film growth technique has been developed to fabricate a new generation of smart and functional and structural requirements of their applications in gas sensors and solar cells. The rapid photothermal

Chow, Lee

222

Preparation and characterization of TL-based superconducting thin films  

E-Print Network (OSTI)

A simple method for growth of Tl-based superconducting thin films is described. In this method, the precursor was prepared in a vacuum chamber by deposition of Ba, Ca and Cu metals or a Ba-Ca alloy and Cu metal. The precursor was then oxidized...

Wang, Pingshu

2012-06-07T23:59:59.000Z

223

The Elastic Mechanical Response of Supported Thin Polymer Films  

Science Journals Connector (OSTI)

Peter C. Chung , Emmanouil Glynos , and Peter F. Green * ... Johnson, K. L.; Kendall, K.; Roberts, A. D.Surface energy and contact of elastic solids Proc. ... at the value corresponding to strongly interacting films for adsorption energies slightly larger and still of order T. In particular, we predict that the Tg shift can be non-monotonous as a function of the film thickness, in the case of intermediate interaction strength. ...

Peter C. Chung; Emmanouil Glynos; Peter F. Green

2014-12-03T23:59:59.000Z

224

LIQUID PHASE DEPOSITION OF ELECTROCHROMIC THIN FILMS T. J. Richardson and M. D. Rubin  

E-Print Network (OSTI)

1 LIQUID PHASE DEPOSITION OF ELECTROCHROMIC THIN FILMS T. J. Richardson and M. D. Rubin electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared, and readily scalable to larger substrates. Keywords: liquid phase deposition; electrochromic films; thin film

225

Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor  

E-Print Network (OSTI)

The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

Nominanda, Helinda

2012-06-07T23:59:59.000Z

226

Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device  

Science Journals Connector (OSTI)

Abstract Thin films of TiCx/SiC/a-C:H were synthesized on Si substrates using a complex mix of high energy density plasmas and instability accelerated energetic ions of filling gas species, emanated from hot and dense pinched plasma column, in dense plasma focus device. The conventional hollow copper anode of Mather type plasma focus device was replaced by solid titanium anode for synthesis of TiCx/SiC/a-C:H nanocomposite thin films using CH4:Ar admixture of (1:9, 3:7 and 5:5) for fixed 20 focus shots as well as with different number of focus shots with fixed CH4:Ar admixture ratio 3:7. XRD results showed the formation of crystalline TiCx/SiC phases for thin film synthesized using different number of focus shots with CH4:Ar admixture ratio fixed at 3:7. SEM results showed that the synthesized thin films consist of nanoparticle agglomerates and the size of agglomerates depended on the CH4:Ar admixture ratio as well as on the number of focus shots. Raman analysis showed the formation of polycrystalline/amorphous Si, SiC and a-C for different CH4:Ar ratio as well as for different number of focus shots. The XPS analysis confirmed the formation of TiCx/SiC/a-C:H composite thin film. Nanoindentation results showed that the hardness and elastic modulus values of composite thin films increased with increasing number of focus shots. Maximum values of hardness and elastic modulus at the surface of the composite thin film were found to be about 22 and 305 GPa, respectively for 30 focus shots confirming the successful synthesis of hard composite TiCx/SiC/a-C:H coatings.

Z.A. Umar; R.S. Rawat; K.S. Tan; A.K. Kumar; R. Ahmad; T. Hussain; C. Kloc; Z. Chen; L. Shen; Z. Zhang

2013-01-01T23:59:59.000Z

227

Photoconductivity in reactively evaporated copper indium selenide thin films  

SciTech Connect

Copper indium selenide thin films of composition CuInSe{sub 2} with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10{sup ?5} mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe{sub 2} films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (?) of 10{sup 6} cm{sup ?1} at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe{sub 2} thin films indicate its suitability in photovoltaic applications.

Urmila, K. S., E-mail: urmilaks7@gmail.com; Asokan, T. Namitha, E-mail: urmilaks7@gmail.com; Pradeep, B., E-mail: urmilaks7@gmail.com [Solid State Physics Laboratory, Cochin University of Science and Technology, Kochi, Kerala (India); Jacob, Rajani; Philip, Rachel Reena [Thin Film Research Laboratory, Union Christian College, Aluva, Kerala (India)

2014-01-28T23:59:59.000Z

228

Institute of Photo Electronic Thin Film Devices and Technology of Nankai  

Open Energy Info (EERE)

Electronic Thin Film Devices and Technology of Nankai Electronic Thin Film Devices and Technology of Nankai University Jump to: navigation, search Name Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University Place Tianjin Municipality, China Zip 300071 Sector Solar Product A thin-film solar cell research institute in China. References Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University is a company located in Tianjin Municipality, China . References ↑ "Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University"

229

Abstract--In this paper, the propagation characteristics of an enhanced-thickness magnetic nanoparticle thin film are  

E-Print Network (OSTI)

nanoparticle thin film are investigated on high resistivity silicon substrate (10,000 ohm-cm) for the first time up to 60 GHz. Contrary to other thin films, this nanoparticle thin film can achieve a thickness up. Index Terms-- Magnetic thin film, Nanoparticle, Coplanar waveguide, high-permeability materials, FGC I

Tentzeris, Manos

230

Quantum states of neutrons in magnetic thin films  

SciTech Connect

We have studied experimentally and theoretically the interaction of polarized neutrons with magnetic thin films and magnetic multilayers. In particular, we have analyzed the behavior of the critical edges for total external reflection in both cases. For a single film we have observed experimentally and theoretically a simple behavior: the critical edges remain fixed and the intensity varies according to the angle between the polarization axis and the magnetization vector inside the film. For the multilayer case we find that the critical edges for spin-up and spin-down polarized neutrons move toward each other as a function of the angle between the magnetization vectors in adjacent ferromagnetic films. Although the results for multilayers and single thick layers appear to be different, in fact, the same spinor method explains both results. An interpretation of the critical edges behavior for the multilyers as a superposition of ferromagnetic and antifferomagnetic states is given.

Radu, F.; Zabel, H. [Department of Physics, Ruhr-University Bochum, D- 44780 Bochum (Germany); Leiner, V. [Institut fuer Werkstoffforschung WFN, GKSS Forschungszentrum GmbH, 21502 Geesthacht (Germany); Wolff, M. [Department of Physics, Ruhr-University Bochum, D- 44780 Bochum (Germany); Institut Laue-Langevin, F-38042 Grenoble Cedex 9 (France); Ignatovich, V.K. [Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, 141980, Dubna Moscow Region (Russian Federation)

2005-06-01T23:59:59.000Z

231

Thermal Conductivity in Nanocrystalline Ceria Thin Films  

SciTech Connect

The thermal conductivity of nanocrystalline ceria films grown by unbalanced magnetron sputtering is determined as a function of temperature using laser-based modulated thermoreflectance. The films exhibit significantly reduced conductivity compared with stoichiometric bulk CeO2. A variety of microstructure imaging techniques including X-ray diffraction, scanning and transmission electron microscopy, X-ray photoelectron analysis, and electron energy loss spectroscopy indicate that the thermal conductivity is influenced by grain boundaries, dislocations, and oxygen vacancies. The temperature dependence of the thermal conductivity is analyzed using an analytical solution of the Boltzmann transport equation. The conclusion of this study is that oxygen vacancies pose a smaller impediment to thermal transport when they segregate along grain boundaries.

Marat Khafizov; In-Wook Park; Aleksandr Chernatynskiy; Lingfeng He; Jianliang Lin; John J. Moore; David Swank; Thomas Lillo; Simon R. Phillpot; Anter El-Azab; David H. Hurley

2014-02-01T23:59:59.000Z

232

Studies of thin films and surfaces with optical harmonic generation and electron spectroscopy  

SciTech Connect

Optical second harmonic generation (SHG) and sum frequency generation (SFG) were used to study C{sup 60} thin solid films (low energy ED forbidden electronic excitations), and electron spectroscopy was used to study organic overlayers (xylenes) on Pt(111). Theory of SHG from a thin film is described in terms of surface and bulk contributions as well as local and nonlocal contributions to the optical nonlinearities. (1)In situ SHG data on C{sub 60} films during UHV film growth can be described in terms of only nonlocal contributions to both surface and bulk nonlinear susceptibilities. Microscopic origin of SHG response is discussed in terms of electric quadrupole and ED transitions of C{sub 60}. (2)Adsorption and thermal decomposition of ortho- and para-xylene on Pt(111) is studied using HREELS, LEED, AES, and thermal desorption spectroscopy. We have observed preferential decomposition of the methyl groups which leads to distinct decomposition pathways for ortho- and para-xylene on Pt(111).

Wilk, D.E.

1996-01-01T23:59:59.000Z

233

Organic thin film prehistory: looking towards solution phase aggregation |  

NLE Websites -- All DOE Office Websites (Extended Search)

Organic thin film prehistory: looking towards solution phase aggregation Organic thin film prehistory: looking towards solution phase aggregation Wednesday, November 6, 2013 - 3:00pm SLAC, Redtail Hawk Conference Room 108A Christopher Tassone, SSRL Polymer bulk heterojunction (BHJ) solar cells have attracted significant attention in industry and academia because of their potential for achieving large-area, light-weight, and flexible photovoltaic devices through cost-effective solution deposition techniques. These devices consist of a blend of an absorbing polymer and an electron accepting fullerene, the molecular packing and phase segregation of which heavily influence power conversion efficiency by effecting important processes such as exciton splitting, charge transport, and recombination. Understanding and utilization of molecular interactions to predicatively control the

234

Engineering Thin-Film Oxide Interfaces | Advanced Photon Source  

NLE Websites -- All DOE Office Websites (Extended Search)

Novel Materials Become Multifunctional at the Ultimate Quantum Limit Novel Materials Become Multifunctional at the Ultimate Quantum Limit Outsmarting Flu Viruses How Lead-Free Solder (Mis)Behaves under Stress Dynamics of Polymer Chains Atop Different Materials Priming the Pump in the Fight against Drug-Resistant Tuberculosis Science Highlights Archives: 2013 | 2012 | 2011 | 2010 2009 | 2008 | 2007 | 2006 2005 | 2004 | 2003 | 2002 2001 | 2000 | 1998 | Subscribe to APS Science Highlights rss feed Engineering Thin-Film Oxide Interfaces NOVEMBER 12, 2012 Bookmark and Share LAO thin films on STO substrates are depicted in the top schematics (LAO indicated by blue spheres, STO by green spheres). The top left-hand panel demonstrates a chemically broad interface resulting from conventional growth in a low pressure oxygen environment. In contrast, the top

235

NREL: Energy Analysis - Crystalline Silicon and Thin Film Photovoltaic  

NLE Websites -- All DOE Office Websites (Extended Search)

Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Assessment Harmonization Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics (Fact Sheet) Cover of the Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics factsheet Download the Fact Sheet Over the last 30 years, hundreds of life cycle assessments (LCAs) have been conducted and published for a variety of residential and utility-scale solar photovoltaic (PV) systems with wide-ranging results. The inconsistencies in these results can be attributed to the technologies evaluated-such as differing system designs, real-world versus conceptual systems, or technology improvements over time-and life cycle assessment methods and assumptions. To better understand greenhouse gas (GHG) emissions from commercial

236

Thin-Film Reliability Trends Toward Improved Stability  

SciTech Connect

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (R{sub d}) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2 {+-} 0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-01-01T23:59:59.000Z

237

Thin-Film Reliability Trends Toward Improved Stability: Preprint  

SciTech Connect

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (Rd) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2+/-0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-07-01T23:59:59.000Z

238

Method for formation of thin film transistors on plastic substrates  

DOE Patents (OSTI)

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

1998-10-06T23:59:59.000Z

239

Method for formation of thin film transistors on plastic substrates  

DOE Patents (OSTI)

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

1998-10-06T23:59:59.000Z

240

Surface oxidation of Permalloy thin films  

SciTech Connect

The chemical and magnetic structures of oxides on the surface of Permalloy Ni{sub 81}Fe{sub 19} films were investigated as functions of annealing time with x-ray and polarized neutron reflectometry. For annealing times of less than one hour, the oxide consisted of a 1.5-nm-thick layer of NiO on an Fe oxide layer that was in contact with Permalloy. The Fe oxide thickness increases with annealing time with a parabolic rate constant of 10{sup -18} cm{sup 2} s{sup -1} (for an annealing temperature of 373 K). The growth of the oxide layer is limited by the rate at which oxygen appears below the NiO layer. No portion of the oxide region was found to be ferromagnetically ordered for films annealed less than one hour. The growth of the Fe oxide region is well correlated with the measured increase of the second-order magnetic susceptibility for similarly prepared samples.

Fitzsimmons, M. R.; Crawford, T. M. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Silva, T. J. [National Institute of Standards and Technology, Boulder, Colorado 80303 (United States)

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Method for making dense crack free thin films  

DOE Patents (OSTI)

The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

Jacobson, Craig P. (Lafayette, CA); Visco, Steven J. (Berkeley, CA); De Jonghe, Lutgard C. (Lafayette, CA)

2007-01-16T23:59:59.000Z

242

Amorphous silicon thin film transistor as nonvolatile device.  

E-Print Network (OSTI)

particles before loaded into the deposition chamber. 2.2.2. Equipment for Plasma Processes Plasma-Enhanced Chemical Vapor...: Dr. Yue Kuo n-channel and p-channel amorphous-silicon thin-film transistors (a-Si:H TFTs) with copper electrodes prepared by a novel plasma etching process have been fabricated and studied. Their characteristics are similar to those of TFTs...

Nominanda, Helinda

2008-10-10T23:59:59.000Z

243

Ultra-Thin Metal Films for Enhanced Solar Absorption  

E-Print Network (OSTI)

This paper presents modelled results for optical absorption in ultra-thin films of nickel, gold and silver over the solar spectrum. It is found in the case of nickel there is an optimum thickness for maximum solar absorption around 10-13nm. This effect is not observed for gold or silver. It is postulated that this is an interference effect occurring due the particular real and imaginary refractive profile of nickel across the solar spectrum.

Ahmad, N; Teng, M; Cryan, M J

2012-01-01T23:59:59.000Z

244

Synthesis of thin films and materials utilizing a gaseous catalyst  

DOE Patents (OSTI)

A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

2013-10-29T23:59:59.000Z

245

Formation of thin-film resistors on silicon substrates  

DOE Patents (OSTI)

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

1988-11-01T23:59:59.000Z

246

Electric Field Induced Sphere-to-Cylinder Transition in Diblock Copolymer Thin Films  

E-Print Network (OSTI)

Electric Field Induced Sphere-to-Cylinder Transition in Diblock Copolymer Thin Films Ting Xu, A. V Manuscript Received June 21, 2004 ABSTRACT: An electric field induced sphere-to-cylinder transition in thin. In the absence of an applied electric field, thin films of the asymmetric diblock copolymer consisted of layers

Ocko, Ben

247

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network (OSTI)

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell #12;2 1. Introduction: martin.labrune@polytechnique.edu ABSTRACT We report on heterojunction solar cells whose thin intrinsic

248

Electrical characteristics of Ta2O5 thin films deposited by electron beam gun evaporation  

E-Print Network (OSTI)

Electrical characteristics of Ta2O5 thin films deposited by electron beam gun evaporation V films deposited by a simple electron beam gun evaporator. We describe thicknessO5 thin films deposited by a simple electron beam gun evaporator which enables versatility

Eisenstein, Gadi

249

High-throughput analysis of thin-film stresses using arrays of micromachined cantilever beams  

E-Print Network (OSTI)

High-throughput analysis of thin-film stresses using arrays of micromachined cantilever beams Hyun-throughput residual stress measurements on thin films by means of micromachined cantilever beams and an array of parallel laser beams. In this technique, the film of interest is deposited onto a silicon substrate

250

Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films  

DOE Patents (OSTI)

Sr{sub x}Ba{sub 1{minus}x}Nb{sub 2}O{sub 6}, where x is greater than 0.25 and less than 0.75, and KNbO{sub 3} ferroelectric thin films metalorganic chemical vapor deposited on amorphous or crystalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface are disclosed. Such films can be used in electronic, electro-optic, and frequency doubling components. 8 figs.

Wessels, B.W.; Nystrom, M.J.

1998-05-19T23:59:59.000Z

251

Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films  

DOE Patents (OSTI)

Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or crystalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

Wessels, Bruce W. (Wilmette, IL); Nystrom, Michael J. (Germantown, MD)

1998-01-01T23:59:59.000Z

252

Sputter deposition for multi-component thin films  

DOE Patents (OSTI)

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

Krauss, Alan R. (Plainfield, IL); Auciello, Orlando (Cary, NC)

1990-01-01T23:59:59.000Z

253

Sputter deposition for multi-component thin films  

DOE Patents (OSTI)

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

Krauss, A.R.; Auciello, O.

1990-05-08T23:59:59.000Z

254

Decay Processes in the Presence of Thin Superconducting Films  

E-Print Network (OSTI)

In a recent paper [Phys. Rev. Lett. 97, 070401 (2006)] the transition rate of magnetic spin-flip of a neutral two-level atom trapped in the vicinity of a thick superconducting body was studied. In the present paper we will extend these considerations to a situation with an atom at various distances from a dielectric film. Rates for the corresponding electric dipole-flip transition will also be considered. The rates for these atomic flip transitions can be reduced or enhanced, and in some situations they can even be completely suppressed. For a superconducting film or a thin film of a perfect conducting material various analytical expressions are derived that reveals the dependence of the physical parameters at hand.

Per K. Rekdal; Bo-Sture K. Skagerstam

2006-09-20T23:59:59.000Z

255

Spectroscopic ellipsometry characterization of thin-film silicon nitride  

SciTech Connect

We have measured and analyzed the optical characteristics of a series of silicon nitride thin films prepared by plasma-enhanced chemical vapor deposition on silicon substrates for photovoltaic applications. Spectroscopic ellipsometry measurements were made by using a two-channel spectroscopic polarization modulator ellipsometer that measures N, S, and C data simultaneously. The data were fit to a model consisting of air / roughness / SiN / crystalline silicon. The roughness was modeled using the Bruggeman effective medium approximation, assuming 50% SiN, 50% voids. The optical functions of the SiN film were parameterized using a model by Jellison and Modine. All the {Chi}{sup 2} are near 1, demonstrating that this model works extremely well for all SiN films. The measured dielectric functions were used to make optimized SiN antireflection coatings for crystalline silicon solar cells.

Jellison, G.E. Jr.; Modine, F.A. [Oak Ridge National Lab., TN (United States); Doshi, P.; Rohatgi, A. [Georiga Inst. of Technology, Atlanta, GA (United States)

1997-05-01T23:59:59.000Z

256

Order on disorder: Copper phthalocyanine thin films on technical substrates  

SciTech Connect

We have studied the molecular orientation of the commonly used organic semiconductor copper phthalocyanine (CuPC) grown as thin films on the technically relevant substrates indium tin oxide, oxidized Si, and polycrystalline gold using polarization-dependent x-ray absorption spectroscopy, and compare the results with those obtained from single crystalline substrates [Au(110) and GeS(001)]. Surprisingly, the 20{endash}50 nm thick CuPC films on the technical substrates are as highly ordered as on the single crystals. Importantly, however, the molecular orientation in the two cases is radically different: the CuPC molecules stand on the technical substrates and lie on the single crystalline substrates. The reasons for this and its consequences for our understanding of the behavior of CuPC films in devices are discussed. {copyright} 2001 American Institute of Physics.

Peisert, H.; Schwieger, T.; Auerhammer, J. M.; Knupfer, M.; Golden, M. S.; Fink, J.; Bressler, P. R.; Mast, M.

2001-07-01T23:59:59.000Z

257

Long-laser-pulse method of producing thin films  

DOE Patents (OSTI)

A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agen The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.

Balooch, Mehdi (Berkeley, CA); Olander, Donald K. (Berkeley, CA); Russo, Richard E. (Walnut Creek, CA)

1991-01-01T23:59:59.000Z

258

Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy  

SciTech Connect

Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructure after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases.

Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zhang, Yanmin; Hu, Ran; Ren, Naifei [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-11-14T23:59:59.000Z

259

Chemical post-treatment and thermoelectric properties of poly(3,4-ethylenedioxylthiophene):poly(styrenesulfonate) thin films  

SciTech Connect

We report on the modification of the thermoelectric properties of poly(3,4-ethylenedioxylthiophene):poly(styrenesulfonate) (PEDOT:PSS) thin films by means of a simple post treatment of the solid thin films realized by drop-coating. We show that the organic polar solvents, dimethyl sulfoxide and ethylene glycol as secondary dopants for PEDOT:PSS, only affect the film morphology for which a high electrical conductivity is observed. In contrast, ethanolamine (MEA) and ammonia solutions are reduction agents that improve the density of PEDOT chains in the reduced forms (polaron and neutral states), resulting in the trade-off between Seebeck coefficient and electrical conductivity. Furthermore, we show that the nature of amines determines the reduction degree: the nitrogen lone pair electrons in MEA are easier to be donated than those in ammonia solution and will therefore neutralize the PEDOT chains.

Luo, Jinji, E-mail: jinji.luo@zfm.tu-chemnitz.de; Blaudeck, Thomas [Center for Microtechnologies, Technische Universität Chemnitz, Reichenhainer Str. 70, Chemnitz D-09107 (Germany); Billep, Detlef; Otto, Thomas [Fraunhofer Institute for Electro Nano Systems (ENAS), Technologie-Campus 3, Chemnitz D-09107 (Germany); Sheremet, Evgeniya; Rodriguez, Raul D.; Zahn, Dietrich R. T. [Semiconductor Physics, Technische Universität Chemnitz, Reichenhainer Str. 70, Chemnitz D-09107 (Germany); Toader, Marius; Hietschold, Michael [Solid Surfaces Analysis, Technische Universität Chemnitz, Reichenhainer Str. 70, Chemnitz D-09107 (Germany); Gessner, Thomas [Center for Microtechnologies, Technische Universität Chemnitz, Reichenhainer Str. 70, Chemnitz D-09107 (Germany); Fraunhofer Institute for Electro Nano Systems (ENAS), Technologie-Campus 3, Chemnitz D-09107 (Germany)

2014-02-07T23:59:59.000Z

260

Low Temperature Constrained Sintering of Cerium Gadolinium Oxide Films for Solid Oxide Fuel Cell Applications  

E-Print Network (OSTI)

Temperature Solid Oxide Fuel Cells, In: S.C. Singhal and M.solidoxide.html, Tubular Solid Oxide Fuel Cell Technology,Oxide Films for Solid Oxide Fuel Cell Applications by Jason

Nicholas, Jason.D.

2007-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Electrochemical properties of Li[Li{sub 0.2}Mn{sub 0.54}Co{sub 0.13}Ni{sub 0.13}]O{sub 2} cathode thin film by RF sputtering for all-solid-state lithium battery  

SciTech Connect

The Li[Li{sub 0.2}Mn{sub 0.56}Ni{sub 0.13}Co{sub 0.13}]O{sub 2} thin films were prepared by radio frequency magnetron sputtering on Pt/Ti/SiO{sub 2}/Si substrate with target contained a 5% excess of lithium precursor. Thin films were deposited under various deposition conditions such as working pressure, gas ratio of Ar and O{sub 2}, and the temperature of in-situ annealing treatment. The thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The electrochemical property was estimated by a WBC3000 cycler with Li|Li[Li{sub 0.2}Mn{sub 0.54}Ni{sub 0.13}Co{sub 0.13}]O{sub 2} half-type cell at 1C charge/discharge rate. The (0 0 3) and (1 0 4) diffraction peaks which represent layered {alpha}-NaFeO{sub 2} type structure (space group R-3m) were observed. Optimal magnetron sputtering conditions were detected. The 500 Degree-Sign C annealed thin film after deposited at 10 m Torr in Ar:O{sub 2}=3:1 shows a high discharge capacity of around 62 {mu}Ah/cm{sup 2} {mu}m with a high cyclic retention. - Graphical abstract: The Li[Li{sub 0.2}Mn{sub 0.56}Ni{sub 0.13}Co{sub 0.13}]O{sub 2} films is suitable for Lithium thin film battery. The film exhibits great discharge capacity (62 {mu}Ah/cm{sup 2} {mu}m) up to 200 cycles. Highlights: Black-Right-Pointing-Pointer High capacity thin films were deposited by RF magnetron sputtering. Black-Right-Pointing-Pointer Sputtering conditions were optimized by structural and electrochemical analysis. Black-Right-Pointing-Pointer Li[Li{sub 0.2}Mn{sub 0.56}Ni{sub 0.13}Co{sub 0.13}]O{sub 2} thin film shows a high capacity, 62 {mu}Ah/cm{sup 2} {mu}m. Black-Right-Pointing-Pointer The thin film shows an excellent cycling stability up to 200 cycles.

Yim, Haena [Electronic Materials Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of) [Electronic Materials Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of chemical engineering, KyungHee University, Yoingin 449-701 (Korea, Republic of); Yeon Kong, Woo [Electronic Materials Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)] [Electronic Materials Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Chul Kim, Young [Department of chemical engineering, KyungHee University, Yoingin 449-701 (Korea, Republic of)] [Department of chemical engineering, KyungHee University, Yoingin 449-701 (Korea, Republic of); Yoon, Seok-Jin [Electronic Materials Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)] [Electronic Materials Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Choi, Ji-Won, E-mail: jwchoi@kist.re.kr [Electronic Materials Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)] [Electronic Materials Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)

2012-12-15T23:59:59.000Z

262

Solar Thin Films Inc formerly American United Global Inc | Open Energy  

Open Energy Info (EERE)

Films Inc formerly American United Global Inc Films Inc formerly American United Global Inc Jump to: navigation, search Name Solar Thin Films Inc (formerly American United Global Inc) Place New York, New York Zip 10038 Sector Solar Product A US-based solar manufacturing equipment supplier. References Solar Thin Films Inc (formerly American United Global Inc)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Thin Films Inc (formerly American United Global Inc) is a company located in New York, New York . References ↑ "Solar Thin Films Inc (formerly American United Global Inc)" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Thin_Films_Inc_formerly_American_United_Global_Inc&oldid=351338

263

Near-infrared photodetector consisting of J-aggregating cyanine dye and metal oxide thin films  

E-Print Network (OSTI)

We demonstrate a near-infrared photodetector that consists of a thin film of the J-aggregating cyanine dye, U3, and transparent metal-oxide charge transport layers. The high absorption coefficient of the U3 film, combined ...

Osedach, Timothy P.

264

Electrical and optical properties of polycrystalline Ag-doped CdS thin films  

Science Journals Connector (OSTI)

CdS and CdS:Ag thin films were prepared using the spray pyrolysis technique. The prepared films were deposited on glass substrate kept at a temperature of (420±10) °C. The optical and electrical properties hav...

M. A. Khalid; H. A. Jassem

1993-03-01T23:59:59.000Z

265

Strain engineered barium strontium titanate for tunable thin film resonators H. Khassaf,1  

E-Print Network (OSTI)

Strain engineered barium strontium titanate for tunable thin film resonators H. Khassaf,1 N of epitaxial (001) barium strontium titanate (BST) films are computed as functions of composition, misfit

Alpay, S. Pamir

266

Effects of diffusion on lubricant distribution under flying headon thin-film disks  

Science Journals Connector (OSTI)

Lubricants on thin-film disks have large effects on head–disk interface characteristics. They reduce head and disk wear while thick lubricant film increases friction ... in many cases. Lubricant depletion due to

K. Yanagisawa; Y. Kawakubo; M. Yoshino

2005-01-01T23:59:59.000Z

267

400V Class Resistive Fault Current Limiter using YBCO Thin Films  

Science Journals Connector (OSTI)

A resistive fault current limiter with 410 Vrms x 56 Arms was realized by connecting six current limiting elements in series. An element was...3...single crystal and a metal film on AIN. The YBCO thin film was co...

Yuki Kudo; Hiroshi Kubota; Mutsuki Yamazaki…

2000-01-01T23:59:59.000Z

268

Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer  

E-Print Network (OSTI)

Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric current gain obtained...

Lu, Tianlin

2012-07-16T23:59:59.000Z

269

Structural, optical and photocatalytic properties of ZnO thin films and  

E-Print Network (OSTI)

emitting diodes, gas sensors and transparent conducting thin films for solar cells. In this work, Zn an electronic furnace. Fig. 1. Grain size (black) and RMS variations (blue) of 1-6 layered ZnO films vs

270

Low Cost Fabrication of Thin-Film Ceramic Membranes for Nonshrinking...  

NLE Websites -- All DOE Office Websites (Extended Search)

Low Cost Fabrication of Thin-Film Ceramic Membranes for Nonshrinking Substrates Lawrence Berkeley National Laboratory Contact LBL About This Technology Technology Marketing...

271

Advanced Light-Trapping in Thin-Film Silicon Solar Cells  

Science Journals Connector (OSTI)

Light-trapping schemes are essential for high efficiency thin-film Silicon devices. Implementation of various light-trapping/scattering elements will be discussed. An optimum textured...

Wyrsch, Nicolas

272

Emission-angle-dependent photoluminescence of rubrene thin films on silver  

Science Journals Connector (OSTI)

Rubrene layers with thickness comparable to a visible light wavelength on silver thin film exhibit anomalous photoluminescence (PL) spectra that depend strongly on emission angle. The...

Wakamatsu, Takashi

2014-01-01T23:59:59.000Z

273

Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells  

E-Print Network (OSTI)

Thin-film silicon solar cell technology," Progress insolar cells: modeling, materials and device technology.technologies competitive with traditional wafer based solar cells,

Deceglie, Michael G.

2014-01-01T23:59:59.000Z

274

Technological assessment of light-trapping technology for thin-film Si solar cell.  

E-Print Network (OSTI)

??The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was… (more)

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

275

Studies of Block Copolymer Thin Films and Mixtures with an Ionic Liquid  

E-Print Network (OSTI)

identification of structure and domain size in block copolymer thin films using RSoXS enables a quantitative comparison of the bulk

Virgili, Justin

2009-01-01T23:59:59.000Z

276

E-Print Network 3.0 - as2s3 thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

51 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

277

E-Print Network 3.0 - aggase2 thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

42 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

278

E-Print Network 3.0 - ag-in-se thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

36 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

279

E-Print Network 3.0 - alendronate-hydroxyapatite thin films Sample...  

NLE Websites -- All DOE Office Websites (Extended Search)

35 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

280

E-Print Network 3.0 - almgb14 thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

38 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

E-Print Network 3.0 - antibacterial thin films Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

78 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

282

E-Print Network 3.0 - abrasion-resistant thin films Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

73 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

283

E-Print Network 3.0 - al-cu-fe thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

52 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

284

Using Localized Plasmon Resonances to Enhance Absorption Efficiency in Thin-film Organic Solar Cells  

Science Journals Connector (OSTI)

We propose the use of localized surface plasmon modes excited by square metallic gratings to enhance the optical absorption of thin-film organic solar cells. Broadband absorption...

Le, Khai Q; Abass, Aimi; Maes, Bjorn; Bienstman, Peter; Alu, Andrea

285

E-Print Network 3.0 - active thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Western Ontario a JOINT presentation of the Summary: and conducting thin films for optoelectronic applications from carbon nanotubes and graphene" ABSTRACT: Low... . The interest...

286

E-Print Network 3.0 - ag sn thin-film Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

solar... on a conventional metal-oxide transparent electrode. Thin-film optoelectronic devices make ... Source: Cui, Yi - Department of Materials Science and Engineering,...

287

Study of GaN:Eu3+ Thin Films Deposited by Metallorganic  

E-Print Network (OSTI)

as an advantageous architecture for transparent electrodes in optoelectronic devices due primarily to high characteristics of electrodes in optoelectronic devices and in supercapactiors, we introduced oxide thin films

McKittrick, Joanna

288

Design, fabrication and optical characterization of photonic crystal assisted thin film monocrystalline-silicon solar cells  

Science Journals Connector (OSTI)

In this paper, we present the integration of an absorbing photonic crystal within a monocrystalline silicon thin film photovoltaic stack fabricated without epitaxy. Finite difference...

Meng, Xianqin; Depauw, Valérie; Gomard, Guillaume; El Daif, Ounsi; Trompoukis, Christos; Drouard, Emmanuel; Jamois, Cécile; Fave, Alain; Dross, Frédéric; Gordon, Ivan; Seassal, Christian

2012-01-01T23:59:59.000Z

289

Thin-Film Fiber Optic Sensors for Power Control and Fault Detection. Final Report  

SciTech Connect

Described is the development of an optical current measurement device, an active power conditioning system, and sol gel type thin films for the detection of magnetic fields.

Duncan, Paul Grems

2003-09-30T23:59:59.000Z

290

Electrostatic layer-by-layer assembly of hybrid thin films using polyelectrolytes and inorganic nanoparticles.  

E-Print Network (OSTI)

??Polymer/inorganic nanoparticle hybrid thin films, primarily composed of functional inorganic nanoparticles, are of great interest to researchers because of their interesting electronic, photonic, and optical… (more)

Peng, Chunqing

2011-01-01T23:59:59.000Z

291

Robust Thin-Film Generator Based on Segmented Contact-Electrification for Harvesting Wind Energy  

Science Journals Connector (OSTI)

Robust Thin-Film Generator Based on Segmented Contact-Electrification for Harvesting Wind Energy ... energies in a wide range of forms. ...

Xian Song Meng; Guang Zhu; Zhong Lin Wang

2014-05-13T23:59:59.000Z

292

Alta Devices Develops World Record Setting Thin-Film Solar Cell  

Office of Energy Efficiency and Renewable Energy (EERE)

EERE supported the development of Alta Devices' thin film Gallium Arsenide photovoltaic technology that set a world record for conversion efficiency.

293

AN INVESTIGATION OF THE FLUID DYNAMICS ASPECTS OF THIN LIQUID FILM PROTECTION  

E-Print Network (OSTI)

a conservative "design window" for film detachment. Initial observations of film flow around cy- lindricalAN INVESTIGATION OF THE FLUID DYNAMICS ASPECTS OF THIN LIQUID FILM PROTECTION SCHEMES FOR INERTIAL liquid film wall protection systems have been conducted in support of the ARIES-IFE study. Both

California at San Diego, University of

294

Silicon-integrated thin-film structure for electro-optic applications  

DOE Patents (OSTI)

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

McKee, Rodney A. (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

295

Overview and Challenges of Thin Film Solar Electric Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

and Challenges of Thin and Challenges of Thin Film Solar Electric Technologies H.S. Ullal Presented at the World Renewable Energy Congress X and Exhibition 2008 Glasgow, Scotland, United Kingdom July 19-25, 2008 Conference Paper NREL/CP-520-43355 December 2008 NOTICE The submitted manuscript has been offered by an employee of the Alliance for Sustainable Energy, LLC (ASE), a contractor of the US Government under Contract No. DE-AC36-08-GO28308. Accordingly, the US Government and ASE retain a nonexclusive royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for US Government purposes. This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any

296

Combinatorial study of zinc tin oxide thin-film transistors  

SciTech Connect

Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO:SnO{sub 2} ratio of the film varies as a function of position on the sample, from pure ZnO to SnO{sub 2}, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2 to 12 cm{sup 2}/V s, with two peaks in mobility in devices at ZnO fractions of 0.80{+-}0.03 and 0.25{+-}0.05, and on/off ratios as high as 10{sup 7}. Transistors composed predominantly of SnO{sub 2} were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

McDowell, M. G.; Sanderson, R. J.; Hill, I. G. [Dalhousie University, Department of Physics, Halifax, Nova Scotia B3H 3J5 (Canada)

2008-01-07T23:59:59.000Z

297

Thin film solar cell including a spatially modulated intrinsic layer  

DOE Patents (OSTI)

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

1989-03-28T23:59:59.000Z

298

Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint  

SciTech Connect

We report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. In CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.

Ullal, H. S.; von Roedern, B.

2007-09-01T23:59:59.000Z

299

Thin film coating process using an inductively coupled plasma  

DOE Patents (OSTI)

Thin coatings of normally solid materials are applied to target substrates using an inductively coupled plasma. Particles of the coating material are vaporized by plasma heating, and pass through an orifice to a first vacuum zone in which the particles are accelerated to a velocity greater than Mach 1. The shock wave generated in the first vacuum zone is intercepted by the tip of a skimmer cone that provides a second orifice. The particles pass through the second orifice into a second zone maintained at a higher vacuum and impinge on the target to form the coating. Ultrapure coatings can be formed.

Kniseley, Richard N. (Ames, IA); Schmidt, Frederick A. (Ames, IA); Merkle, Brian D. (Ames, IA)

1990-01-30T23:59:59.000Z

300

Critical lines of magnetic semiconductor thin films: Experiment  

Science Journals Connector (OSTI)

The irreversibilities between the field-cooled and zero-field-cooled dc magnetization were used to determine the field and composition dependence of the spin-glass freezing temperature in CdCr2-2x In2x Se4 thin films. The magnetic ordering was confirmed by the temperature dependence of induced magnetization M and unidirectional magnetic anisotropy field Han determined from ferromagnetic resonance data (4.2–120 K). The experimentally determined H-T phase diagram shows two instability lines: the Gabay-Toulouse-type (GT line) and the Almeida-Thouless-type (AT line) for thin films of CdCr2 Se4 :In with reentrant transition and the AT line for CdCr2-2x In2x Se4 in the spin-glass state. The AT and GT lines obey the relation ?=[(n+1)(n+2)/8]1/3 (heff )2/3 and ?=[(n2 +4n+2)/(4(n+2)2 )] (heff )2 , respectively, for the normalized effective field heff =ha +hm . The first term in heff stands for the external magnetic field, while the second is related to the internal field of the infinite ferromagnetic network (long-range ordering). The value of hm determined from the H-T phase diagram was found to be dependent on indium concentration.

M. Lubecka; L. J. Maksymowicz; R. Szymczak; W. Powroz-acutenik

1997-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Dielectric back scattering patterns for light trapping in thin-film Si solar cells  

E-Print Network (OSTI)

Dielectric back scattering patterns for light trapping in thin-film Si solar cells M. van Lare,1 of dielectric and metallic backscattering patterns in thin-film a-Si:H solar cells. We compare devices. Zhu, C.-M. Hsu, Z. Yu, S. Fan, and Y. Cui, "Nanodome solar cells with efficient light management

Polman, Albert

302

Enhancement of photoluminescence due to erbium-doped in CdS thin films  

Science Journals Connector (OSTI)

Cadmium sulfide (CdS) thin films were synthesized by chemical bath ... on glass substrates at 80 °C. The CdS thin films were doped with erbium (Er3+) during the growth process by adding aqueous solutions of Er(NO

O. Zelaya-Angel; S. A. Tomás; P. Rodríguez…

2012-01-01T23:59:59.000Z

303

EPMA Instructions for Thin Film Samples General guidelines to reading computer related commands  

E-Print Network (OSTI)

EPMA Instructions for Thin Film Samples General guidelines to reading computer related commands: `Single quote' = menu item, window, or icon "Double quote" = something you type = button you your sample, thin film up, on the dot of epoxy 4. Repeat until all samples are on the puck 5. Flip your

304

Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell  

E-Print Network (OSTI)

Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell J. Grandidier on top of a solar cell can enhance light absorption and therefore increase its efficiency. Freely photocurrent of the solar cell. On a typical thin film amorphous silicon solar cell, a parametric analysis

Atwater, Harry

305

The effect of stress on the dielectric properties of barium strontium titanate thin films  

E-Print Network (OSTI)

The effect of stress on the dielectric properties of barium strontium titanate thin films T. M Barium strontium titanate thin films are being developed as capacitors in dynamic random access memories to their large permittivities, barium strontium titan- ate BST bulk ceramics have long been used to make high

Suo, Zhigang

306

Discrete Barium Strontium Titanate (BST) Thin-Film Interdigital Varactors on Alumina: Design, Fabrication, Characterization, and  

E-Print Network (OSTI)

Discrete Barium Strontium Titanate (BST) Thin-Film Interdigital Varactors on Alumina: Design, Raleigh, NC-27695-7914, USA. Email:jayeshnath@ieee.org Abstract -- Discrete Barium Strontium Titanate (BST, capacitors, BST, ferroelectric, thin-film, barium strontium titanate, bandpass filter, IP3, ACPR, temperature

307

Self-similar solutions for a fractional thin film equation governing hydraulic fractures  

E-Print Network (OSTI)

Self-similar solutions for a fractional thin film equation governing hydraulic fractures C. Imbert equation governing hydraulic fractures are constructed. One of the boundary con- ditions, which accounts, 35R11, 35C06 Keywords: Hydraulic fractures, higher order equation, thin films, fractional Laplacian

Boyer, Edmond

308

STRAIN SENSING WITH PIEZOELECTRIC ZINC OXIDE THIN FILMS FOR VIBRATION SUPPRESSION IN HARD DISK DRIVES  

E-Print Network (OSTI)

was successfully obtained while the suspension was flying on a disk as in normal drive operation. PreliminarySTRAIN SENSING WITH PIEZOELECTRIC ZINC OXIDE THIN FILMS FOR VIBRATION SUPPRESSION IN HARD DISK This paper describes the integration of thin film ZnO strain sensors onto hard disk drive suspensions

Horowitz, Roberto

309

Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films  

E-Print Network (OSTI)

Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films A. Bulusu and D. G. Walker1 Interdisciplinary Program in Material Science Vanderbilt University Nashville on device characteristics of 1D and 2D thin film superlattices whose applications include thermoelectric

Walker, D. Greg

310

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network (OSTI)

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

311

Nano-photonic Light Trapping In Thin Film Solar Dennis M. Callahan Jr.  

E-Print Network (OSTI)

Nano-photonic Light Trapping In Thin Film Solar Cells Thesis by Dennis M. Callahan Jr. In Partial. Jeremy Munday for helping me get started on the thin-film GaAs project and for all the time we spent to thank Dr. Jonathan Grandidier for working closely with me for a couple years on the nano sphere solar

Winfree, Erik

312

Bi-Sr-Ca-Cu-O thin films grown by flash evaporation and pulsed laser deposition  

E-Print Network (OSTI)

. Thin films were grown by flash evaporation at Texas A&M University, and by pulsed laser deposition (PLD) at the University of Wollongong, Australia. The latter of these techniques is widely used for growing thin films of various compounds. Single...

Ganapathy Subramanian, Santhana

2004-09-30T23:59:59.000Z

313

Measuring the fracture toughness of ultra-thin films with application to AlTa coatings  

E-Print Network (OSTI)

1 Measuring the fracture toughness of ultra-thin films with application to AlTa coatings Yong Xiang Abstract An experimental technique is presented for measuring the fracture toughness of brittle thin films with a focused ion beam and the membranes are pressurized until rupture. The fracture stress of the membrane

314

Carbon nanotube thin films with ordered structures Chunsheng Du,a  

E-Print Network (OSTI)

Carbon nanotube thin films with ordered structures Chunsheng Du,a Jeff Yehb and Ning Pan*a Received December 2004 DOI: 10.1039/b414682d Carbon nanotube thin films with ordered structures have been developed properties, carbon nanotubes have aroused a great deal of research interest, and a wider range of potential

Pan, Ning

315

X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films  

E-Print Network (OSTI)

X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films T. J. Richardsona@lbl.gov Abstract Mixed metal thin films containing magnesium and a first-row transition element exhibit very large and coordination of the magnesium and transition metal atoms during hydrogen absorption were studied using dynamic

316

Synthesis and Screening of Thin Films in the CeCl3-CeBr3 System...  

NLE Websites -- All DOE Office Websites (Extended Search)

Screening of Thin Films in the CeCl3-CeBr3 System for Scintillator Applications. Synthesis and Screening of Thin Films in the CeCl3-CeBr3 System for Scintillator Applications....

317

Theoretical simulations of protective thin film Fabry-Pérot filters for integrated optical elements of diode pumped alkali lasers (DPAL)  

SciTech Connect

The lifetime of Diode-Pumped Alkali Lasers (DPALs) is limited by damage initiated by reaction of the glass envelope of its gain medium with rubidium vapor. Rubidium is absorbed into the glass and the rubidium cations diffuse through the glass structure, breaking bridging Si-O bonds. A damage-resistant thin film was developed enhancing high-optical transmission at natural rubidium resonance input and output laser beam wavelengths of 780 nm and 795 nm, while protecting the optical windows of the gain cell in a DPAL. The methodology developed here can be readily modified for simulation of expected transmission performance at input pump and output laser wavelengths using different combination of thin film materials in a DPAL. High coupling efficiency of the light through the gas cell was accomplished by matching the air-glass and glass-gas interfaces at the appropriate wavelengths using a dielectric stack of high and low index of refraction materials selected to work at the laser energies and protected from the alkali metal vapor in the gain cell. Thin films as oxides of aluminum, zirconium, tantalum, and silicon were selected allowing the creation of Fabry-Perot optical filters on the optical windows achieving close to 100% laser transmission in a solid optic combination of window and highly reflective mirror. This approach allows for the development of a new whole solid optic laser.

Quarrie, L., E-mail: Lindsay.Quarrie@l-3com.com, E-mail: lindsay.o.quarrie@gmail.com [New Mexico Institute of Mining and Technology, Department of Materials Engineering, 801 LeRoy Place, Socorro, NM 87801 (United States); Air Force Research Laboratory, AFRL/RDLC Laser CoE, 3550 Aberdeen Avenue SE, Kirtland AFB, NM 87117-5776 (United States)

2014-09-15T23:59:59.000Z

318

Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication  

SciTech Connect

The effect that direct current (dc) substrate bias has on radio frequency-sputter-deposited amorphous silicon (a-Si) films has been investigated. The substrate bias produces a denser a-Si film with fewer defects compared to unbiased films. The reduced number of defects results in a higher resistivity because defect-mediated conduction paths are reduced. Thin film transistors (TFTs) that were completely sputter deposited were fabricated and characterized. The TFT with the biased a-Si film showed lower leakage (off-state) current, higher on/off current ratio, and higher transconductance (field effect mobility) than the TFT with the unbiased a-Si film.

Jun, Seung-Ik; Rack, Philip D.; McKnight, Timothy E.; Melechko, Anatoli V.; Simpson, Michael L. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996-2200 (United States); Molecular Scale Engineering and Nanoscale Technologies Research Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

2005-09-26T23:59:59.000Z

319

Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications  

Science Journals Connector (OSTI)

This paper describes a systematic approach to analyze the simultaneous impact of various reactant plasma parameters of remote plasma enhanced ALD (PEALD) on the ZnO thin film properties. Particular emphasis is placed on the film stoichiometry which affects the electrical properties of the thin film. Design of Experiment (DOE) is used to study the impact of the oxygen plasma parameters such as the RF power, pressure and plasma time to realize semiconductor quality of ZnO thin film. Based on the optimized plasma condition, staggered bottom-gate \\{TFTs\\} were fabricated and its electrical characteristics were measured.

S.M. Sultan; O.D. Clark; T.B. Masaud; Q. Fang; R. Gunn; M.M.A. Hakim; K. Sun; P. Ashburn; H.M.H. Chong

2012-01-01T23:59:59.000Z

320

Reactions of Disilane on Cu(111): Direct Observation of Competitive Dissociation, Disproportionation, and Thin Film Growth Processes  

Science Journals Connector (OSTI)

Reactions of Disilane on Cu(111): Direct Observation of Competitive Dissociation, Disproportionation, and Thin Film Growth Processes ...

Shrikant P. Lohokare; Benjamin C. Wiegand; Ralph G. Nuzzo

1995-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa  

E-Print Network (OSTI)

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa , Alessio in the fabrication of high efficiency CdTe/CdS thin film solar cells. Usually, it is done first by etching the Cd: Back Contact, CdTe, Thin Film 1 INTRODUCTION The back contact in the CdTe/CdS thin film solar cell

Romeo, Alessandro

322

Comparison of Ag and SiO2 Nanoparticles for Light Trapping Applications in Silicon Thin Film Solar Cells  

Science Journals Connector (OSTI)

Comparison of Ag and SiO2 Nanoparticles for Light Trapping Applications in Silicon Thin Film Solar Cells ... † Department

Martin Theuring; Peng Hui Wang; Martin Vehse; Volker Steenhoff; Karsten von Maydell; Carsten Agert; Alexandre G. Brolo

2014-09-10T23:59:59.000Z

323

Influence of film thickness and In-doping on physical properties of CdS thin films  

Science Journals Connector (OSTI)

Abstract Polycrystalline CdS thin films were deposited on glass substrates by close spaced sublimation technique. Samples of various thicknesses, ranging from 250 to 940 nm were obtained. The optical and electrical properties of pure CdS thin films were studied as a function of film thickness. The resistivity of as-deposited CdS films was in the order of 106–108 ? cm, depending upon the film thickness. In the high temperature region, carriers are transported over the grain boundaries by thermionic emission. Resistivity was reduced to the order of 10?2–101 ? cm by the thermally diffusion of indium into CdS films, without changing the type of carriers. The annealing temperature dependence of structural, optical and electrical properties of In-doped CdS films showed that the samples annealed at 350 °C and 400 °C exhibited better results.

Sajid Butt; Nazar Abbas Shah; Adnan Nazir; Zulfiqar Ali; Asghri Maqsood

2014-01-01T23:59:59.000Z

324

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network (OSTI)

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

325

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a  

E-Print Network (OSTI)

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a J. D. Servaites thin-film solar cell types: hydrogenated amorphous silicon a-Si:H p-i-n cells, organic bulk understanding of thin film solar cell device physics, including important module performance variability issues

Alam, Muhammad A.

326

Enhancement of optical absorption in thin-film organic solar cells through the excitation of plasmonic modes in metallic gratings  

E-Print Network (OSTI)

Enhancement of optical absorption in thin-film organic solar cells through the excitation 2010 We theoretically investigate the enhancement of optical absorption in thin-film organic solar.1063/1.3377791 Thin-film organic solar cells OSCs are a promising candidate for low-cost energy conversion.1­6 However

Veronis, Georgios

327

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network (OSTI)

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells Company has had a conti- nuous effort on thin film solar cells for the past four and a half years

Paris-Sud XI, Université de

328

Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High efficiency and junction property  

E-Print Network (OSTI)

Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High-conductor-free organic lead iodide thin film solar cells have been fabricated with a sequential deposition method are comparable to that of the high-efficiency thin-film solar cells. VC 2014 AIP Publishing LLC. [http

Wang, Wei Hua

329

Finite-element analysis of the deformation of thin Mylar films due to measurement forces.  

SciTech Connect

Significant deformation of thin films occurs when measuring thickness by mechanical means. This source of measurement error can lead to underestimating film thickness if proper corrections are not made. Analytical solutions exist for Hertzian contact deformation, but these solutions assume relatively large geometries. If the film being measured is thin, the analytical Hertzian assumptions are not appropriate. ANSYS is used to model the contact deformation of a 48 gauge Mylar film under bearing load, supported by a stiffer material. Simulation results are presented and compared to other correction estimates. Ideal, semi-infinite, and constrained properties of the film and the measurement tools are considered.

Baker, Michael Sean; Robinson, Alex Lockwood; Tran, Hy D.

2012-01-01T23:59:59.000Z

330

Soft-Chemistry–Based Routes to Epitaxial ?-Quartz Thin Films with Tunable Textures  

Science Journals Connector (OSTI)

...the outer surface (36...migrate to the surface and remain...illustrated by the parabolic dependence...expelled to the surface of the film...macrostructure of a large area in macroporous quartz thin film with...quartz films after 5 hours at...relax internal stresses within the...full width at half-maximum...

A. Carretero-Genevrier; M. Gich; L. Picas; J. Gazquez; G. L. Drisko; C. Boissiere; D. Grosso; J. Rodriguez-Carvajal; C. Sanchez

2013-05-17T23:59:59.000Z

331

Phase-field simulation of strain-induced domain switching in magnetic thin films  

E-Print Network (OSTI)

Phase-field simulation of strain-induced domain switching in magnetic thin films Jia-Mian Hu, G of the Bloch point in a magnetic film with strong uniaxial magnetic anisotropy Low Temp. Phys. 37, 690 (2011) Evolution of magnetic bubble domains in manganite films Appl. Phys. Lett. 99, 042503 (2011) 360° domain wall

Chen, Long-Qing

332

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells  

DOE Patents (OSTI)

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Ramanathan, Kannan V. (Lakewood, CA); Contreras, Miguel A. (Golden, CA); Bhattacharya, Raghu N. (Littleton, CA); Keane, James (Lakewood, CA); Noufi, Rommel (Golden, CA)

1999-01-01T23:59:59.000Z

333

Thin Films Department of Materials Science and Engineering, Carnegie Mellon University  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Films Department of Materials Science and Engineering, Carnegie Mellon University Lu Yan, K.R. Balasubramaniam, Shanling Wang, Hui Du, and Paul Salvador Funded b y: U.S. D epartment o f E nergy, S olid S tate E nergy C onversion A lliance ( SECA) Introduction The oxygen reduction reaction (ORR) takes place in the solid oxide fuel cell (SOFC) cathode and the overall reaction is rather complex; it involves a variety of sub-reactions, such as surface adsorption, dissociation, election transfer, incorporation, and bulk diffusion. Although a considerable amount of effort has been expended in correlating processing / microstructural features to cathode performance, there is unfortunately relatively little known about the fundamental surface properties of oxide surfaces and their relation

334

Properties of ferroelectric/ferromagnetic thin film heterostructures  

SciTech Connect

Ferroelectric/ferromagnetic thin film heterostructures, SrBi{sub 2}Ta{sub 2}O{sub 9}/BaFe{sub 12}O{sub 19} (SBT/BaM), were grown on platinum-coated Si substrates using metal-organic decomposition. X-ray diffraction patterns confirmed that the heterostructures contain only SBT and BaM phases. The microwave properties of these heterostructures were studied using a broadband ferromagnetic resonance (FMR) spectrometer from 35 to 60 GHz, which allowed us to determine gyromagnetic ratio and effective anisotropy field. The FMR linewidth is as low as140 Oe at 58 GHz. In addition, measurements of the effective permittivity of the heterostructures were carried out as a function of bias electric field. All heterostructures exhibit hysteretic behavior of the effective permittivity. These properties indicate that such heterostructures have potential for application in dual electric and magnetic field tunable resonators, filters, and phase shifters.

Chen, Daming, E-mail: chendaming1986@gmail.com [Center for Magnetism and Magnetic Nanostructures, University of Colorado Colorado Springs, 1420 Austin Bluffs Pkwy, Colorado Springs, Colorado 80918 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 Sichuan (China); Harward, Ian; Linderman, Katie; Economou, Evangelos; Celinski, Zbigniew [Center for Magnetism and Magnetic Nanostructures, University of Colorado Colorado Springs, 1420 Austin Bluffs Pkwy, Colorado Springs, Colorado 80918 (United States); Nie, Yan [Center for Magnetism and Magnetic Nanostructures, University of Colorado Colorado Springs, 1420 Austin Bluffs Pkwy, Colorado Springs, Colorado 80918 (United States); School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei 430074 (China)

2014-05-07T23:59:59.000Z

335

Manipulating Josephson junctions in thin-films by nearby vortices  

SciTech Connect

It is shown that a vortex trapped in one of the banks of a planar edge-type Josephson junction in a narrow thin-film superconducting strip can change drastically the dependence of the junction critical current on the applied field, I-c(H). When the vortex is placed at certain discrete positions in the strip middle, the pattern I-c(H) has zero at H = 0 instead of the traditional maximum of '0-type' junctions. The number of these positions is equal to the number of vortices trapped at the same location. When the junction-vortex separation exceeds similar to W, the strip width, I-c(H) is no longer sensitive to the vortex presence. The same is true for any separation if the vortex approaches the strip edges. (C) 2014 Elsevier B.V. All rights reserved.

Kogan, V.G.; Mints, R.G.

2014-07-01T23:59:59.000Z

336

Room-temperature magnetoelectric multiferroic thin films and applications thereof  

DOE Patents (OSTI)

The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.

Katiyar, Ram S; Kuman, Ashok; Scott, James F.

2014-08-12T23:59:59.000Z

337

Characterization of Field Exposed Thin Film Modules: Preprint  

SciTech Connect

Test arrays of thin film modules have been deployed at the Solar Energy Centre near New Delhi, India since 2002-2003. Performances of these arrays were reported by O.S. Sastry [1]. This paper reports on NREL efforts to support SEC by performing detailed characterization of selected modules from the array. Modules were selected to demonstrate both average and worst case power loss over the 8 years of outdoor exposure. The modules characterized included CdTe, CIS and three different types of a-Si. All but one of the a-Si types were glass-glass construction. None of the modules had edge seals. Detailed results of these tests are presented along with our conclusions about the causes of the power loss for each technology.

Wohlgemuth, J. H.; Sastry, O. S.; Stokes, A.; Singh, Y. K.; Kumar, M.

2012-06-01T23:59:59.000Z

338

Asymmetric Reduction of Gold Nanoparticles into Thermoplasmonic Polydimethylsiloxane Thin Films  

Science Journals Connector (OSTI)

This work extends this range to include fabrication and characterization of AuNP-containing asymmetric thin films and shows important advantages relative to uniformly distributed particles via sub-surface introduction of AuNPs at just one interface of a polymer. ... Using a diffusivity of water in PDMS of approximately 2 × 10–9 m2/s,(32) diffusive penetration of water into a semi-infinite PDMS slab would reach approximately 5 cm after 24 h. ... This increase in thermal response relative to previous aqueous, silica, and PDMS samples appears to result from an increase in nanoparticle density relative to insulating PDMS, insulation of the heated layer by a thicker, adjacent gold-free PDMS, and reduction of radiativity of the PDMS relative to planar substrates. ...

Jeremy R. Dunklin; Gregory T. Forcherio; Keith R. Berry, Jr.; D. Keith Roper

2013-08-09T23:59:59.000Z

339

Gain properties of dye-doped polymer thin films  

E-Print Network (OSTI)

The demonstration of an electrically pumped organic laser remains a major issue of organic optoelectronics for several decades. Nowadays, hybrid pumping seems a promising compromise where the organic material is optically pumped by an electrically pumped inorganic device on chip. This technical solution requires therefore an optimization of the organic gain medium under optical pumping. Here, we report a detailed study of gain features of dye-doped polymer thin films, in particular we introduce the gain efficiency $K$, in order to facilitate comparison between material and experimental conditions. First, we measure the bulk gain by the means of a pump-probe setup, and then present in details several factors which modify the actual gain of the layer, namely the confinement factor, the pump polarization, the molecular anisotropy, and the re-absorption. The usual model to evaluate the gain leads to an overestimation by more than one order of magnitude, which stresses the importance to design the devices accordin...

Gozhyk, I; Rabbani, H; Djellali, N; Forget, S; Chenais, S; Ulysse, C; Brosseau, A; Gauvin, S; Zyss, J; Lebental, M

2014-01-01T23:59:59.000Z

340

Generation of mirage effect by heated carbon nanotube thin film  

SciTech Connect

Mirage effect, a common phenomenon in nature, is a naturally occurring optical phenomenon in which lights are bent due to the gradient variation of refraction in the temperature gradient medium. The theoretical analysis of mirage effect generated by heated carbon nanotube thin film is presented both for gas and liquid. Excellent agreement is demonstrated through comparing the theoretical prediction with published experimental results. It is concluded from the theoretical prediction and experimental observation that the mirage effect is more likely to happen in liquid. The phase of deflected optical beam is also discussed and the method for measurement of thermal diffusivity of medium is theoretically verified. Furthermore, a method for measuring the refractive index of gas by detecting optical beam deflection is also presented in this paper.

Tong, L. H. [Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230026 (China); USTC-CityU Joint Advanced Research Centre, Suzhou, Jiangsu 215123 (China); Lim, C. W., E-mail: bccwlim@cityu.edu.hk [USTC-CityU Joint Advanced Research Centre, Suzhou, Jiangsu 215123 (China); Department of Civil and Architectural Engineering, City University of Hong Kong, Kowloon, Hong Kong, People’s Republic of China and City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057 (China); Li, Y. C. [Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Zhang, Chuanzeng; Quoc Bui, Tinh [Department of Civil Engineering, University of Siegen, Paul-Bonatz-Str. 9-11, D-57076 Siegen (Germany)

2014-06-28T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Bioinspired Ceramic Thin Film Processing:? Present Status and Future Perspectives  

Science Journals Connector (OSTI)

23 When considering the preparation of thin films through a chemical route, one should realize that modern chemistry as a major branch of science and industry should be developed to emphasize low consumption of raw materials and energy, low generation of waste, and producer/user friendliness. ... 40,42a,60b The experimental method involves the measurement of surface forces using a surface force apparatus (SFA)61 and atomic force microscopy (AFM),62 which are used for measuring forces between two macroscopic surfaces or between a fine tip and a surface, respectively. ... The result is a hybrid technique combining ease of use and ability to see into cells using optical microscopy with the higher resolution of electron microscopy. ...

Yanfeng Gao; Kunihito Koumoto

2005-07-26T23:59:59.000Z

342

Nitrogen doping in pulsed laser deposited ZnO thin films using dense plasma focus  

Science Journals Connector (OSTI)

Pulsed laser deposition synthesized ZnO thin films, grown at 400 °C substrate temperature in different oxygen gas pressures, were irradiated with 6 shots of pulsed nitrogen ions obtained from 2.94 kJ dense plasma focus to achieve the nitrogen doping in ZnO. Structural, compositional and optical properties of as-deposited and nitrogen ion irradiated ZnO thin films were investigated to confirm the successful doping of nitrogen in irradiated samples. Spectral changes have been seen in the nitrogen irradiated ZnO thin film samples from the low temperature PL measurements. Free electron to acceptor emissions can be observed from the irradiated samples, which hints towards the successful nitrogen doping in films. Compositional analysis by X-ray photoelectron spectroscopy and corresponding shifts in binding energy core peaks of oxygen and nitrogen confirmed the successful use of plasma focus device as a novel source for nitrogen ion doping in ZnO thin films.

S. Karamat; R.S. Rawat; T.L. Tan; P. Lee; S.V. Springham; E. Ghareshabani; R. Chen; H.D. Sun

2011-01-01T23:59:59.000Z

343

Thin Film Encapsulation Methods for Large Area MEMS Packaging  

E-Print Network (OSTI)

penetrated c) Windows in nitride film not clearly visiblea circular window is preferred to minimize film deflection

Mahajerin, Armon

2012-01-01T23:59:59.000Z

344

New frontier in thin film epitaxy and nanostructured materials  

Science Journals Connector (OSTI)

Nanomaterials hold the key to the success of nanotechnology. This review starts with a new paradigm for thin film growth based upon matching of integral multiples of lattice planes across the film-substrate interface. This paradigm of domain matching epitaxy (DME) unifies small as well as large misfit systems utilising the concept of systematic domain variation. By controlling the kinetics of clustering and energetics of interfaces, it is possible to obtain nanoclusters of uniform size and create novel nanostructured materials by design, where relative orientation with respect to matrix can be controlled by DME. In nanostructured materials with unit dimensions 1â??100 nm, science and processing challenges include self-assembly processing, control of interfacial atoms and energetics, quantum confinement issues, nanoscale structure-property correlations. In addition, metastability of interfaces should be controlled for reliability in manufacturing of nanosystems. This paper presents fundamentals of synthesis and processing of nanomaterials, role of interfaces, nanoscale characterisation to establish atomic structure-property correlations and modelling to create novel nanostructured structural, magnetic, photonic and electronic systems with unique and improved properties for next-generation systems with new functionality.

Jagdish Narayan

2009-01-01T23:59:59.000Z

345

ALD and Pulsed CVD of Ruthenium and Ruthenium Dioxide Thin Films From an Amidinate Precursor  

E-Print Network (OSTI)

Narrow window of O2 exposure (e.g. 0.02~0.04 Torr·s @ 325ºC) to obtain high quality pure Ru filmALD and Pulsed CVD of Ruthenium and Ruthenium Dioxide Thin Films From an Amidinate Precursor Xinwei, China Introduction Experimental ALD with O2 Ru metal film Pulsed CVD with NH3+H2 Ru metal film Pulsed

346

COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces  

NLE Websites -- All DOE Office Websites (Extended Search)

COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces Coherent Bragg rod analyses (COBRA) experiments using synchrotron x-rays at Argonne's Advanced Photon Source (MHATT-CAT and PNC-CAT beamlines) directly revealed the sub-angstrom atomic interaction of epitaxial films with substrates. Information on how atoms in the adjoining layers of the film and substrate rearrange to mimic each other may lead to improvements in semiconductor manufacturing and the development of novel heterostructure materials, such as multilayer ferroelectrics, magnetic nanostructures and thin film superconductors. COBRA electron density map of a Gd2O3 film on a gallium arsenide substrate. The peaks correspond to folded Gd atomic positions parallel to the plane of the substrate.

347

The catalytic reactivity of thin film crystal surfaces: Annual technical progress report  

SciTech Connect

Research is being conducted on Cu/Pd and Pd/Cu thin films. Work has been completed on the following: Work Function Studies on Epitaxial Cu/Pd Bilayer Films; Kinetics of CO and Oxygen Adsorption on Smooth and Sputtered Epitaxial Pd(lll) Films on Mica; A Simple Model for the Auger Electron Spectroscopy Evaluation of Thin Film Layer Growth Systems in Which Substrate-Overgrowth Mixing Occurs. Work in progress includes: AES of the Growth of Pd on (lll)Cu and Cu on (lll)Pd; Catalysis of the CO Oxidation Reaction on Epitaxial Cu/Pd Bilayer Films; Thermal Desorption Spectroscopy of CO from Various Thin Film Cu/Pd Bilayers; LEED Measurements; Kinetics of Adsorption of CO on Various Cu/Pd Bilayers. 7 figs.

Vook, R.W.

1988-02-15T23:59:59.000Z

348

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof  

DOE Patents (OSTI)

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Perkins, John (Boulder, CO); Van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David (Evergreen, CO); Taylor, Matthew (Golden, CO); Neuman, George A. (Holland, MI); Luten, Henry A. (Holland, MI); Forgette, Jeffrey A. (Hudsonville, MI); Anderson, John S. (Holland, MI)

2010-07-13T23:59:59.000Z

349

Scanning electrochemical microscope characterization of thin film combinatorial libraries for fuel cell electrode applications  

Science Journals Connector (OSTI)

Pt–Ru combinatorial libraries of potential fuel cell anode catalysts are formed by sequential sputter deposition through masks onto Si wafers. Scanning electrochemical microscopy (SECM) is employed for characterization of electrocatalytic activity. Aspects of using a scanning electrochemical microscope for characterization of an array of thin film fuel cell electrode materials are discussed. It is shown that in applying SECM to library characterization, careful attention must be paid to thin film annealing, specimen topography and tip degradation in order to realize meaningful results. Results from a Pt–Ru thin film library reveal the most active members near the 50 Pt/50 Ru composition.

M Black; J Cooper; P McGinn

2005-01-01T23:59:59.000Z

350

Highly Transparent, Flexible, and Thermally Stable Superhydrophobic ORMOSIL Aerogel Thin Films  

Science Journals Connector (OSTI)

(9, 22) On the other hand, ORMOSIL aerogel thin films produced in this work are highly transparent, do not need any pre or post surface treatments and can be applied on a variety of substrates including glass, wood, and plastics at ambient conditions with common thin-film deposition methods such as spin, dip, and spray coating. ... (b) Photographs of ORMOSIL aerogel thin films coated on glass substrates. ... This makes it possible to coat superhydrophobic aerogels on many different surfaces other than glass, including wood, wall tile, aluminum slab, cotton cloth, and plastics, which enables fast and easy production of large-scale superhydrophobic coatings. ...

Hulya Budunoglu; Adem Yildirim; Mustafa O. Guler; Mehmet Bayindir

2011-01-12T23:59:59.000Z

351

Nanostructured Thin Film Electrolyte for Thin Film Solid Oxide Fuel Cells  

E-Print Network (OSTI)

-aligned nanocomposite (VAN) structure as an interlayer between the electrolyte and cathode is demonstrated. The development of the VAN structures consisted of the cathode material as a perovskite or ordered double perovskite structure, La0.5Sr0.5CoO3 (LSCO) or PrBaCo2O5...

Cho, Sungmee

2012-10-19T23:59:59.000Z

352

Nanostructured silicon thin films deposited by PECVD in the presence of silicon nanoparticles  

SciTech Connect

Nanostructured silicon thin films have been deposited by plasma enhanced chemical vapor deposition at low substrate temperature (100 C) in the presence of silicon nanoparticles. The nanostructure of the films was revealed by transmission electron microscopy, Raman spectroscopy and X-ray diffraction, which showed ordered silicon domains (1--2 nm) embedded in an amorphous silicon matrix. These ordered domains are due to the particles created in the discharge that contribute to the film growth. One consequence of the incorporation of nanoparticles is the accelerated crystallization of the nanostructured silicon thin films when compared to standard a-Si:H, as shown by the electrical characterization during the annealing.

Viera, G.; Cabarrocas, P.R.; Hamma, S.; Sharma, S.N.; Costa, J.; Bertran, E.

1997-07-01T23:59:59.000Z

353

Crystal coherence length effects on the infrared optical response of MgO thin films.  

SciTech Connect

The role of crystal coherence length on the infrared optical response of MgO thin films was investigated with regard to Reststrahlen band photon-phonon coupling. Preferentially (001)-oriented sputtered and evaporated ion-beam assisted deposited thin films were prepared on silicon and annealed to vary film microstructure. Film crystalline coherence was characterized by x-ray diffraction line broadening and transmission electron microscopy. The infrared dielectric response revealed a strong dependence of dielectric resonance magnitude on crystalline coherence. Shifts to lower transverse optical phonon frequencies were observed with increased crystalline coherence. Increased optical phonon damping is attributed to increasing granularity and intergrain misorientation.

Boreman, Glenn D. (University of Central Florida, Orlando, FL); Kotula, Paul Gabriel; Rodriguez, Mark Andrew; Shelton, David J. (University of Central Florida, Orlando, FL); Carroll, James F., III; Sinclair, Michael B.; Ihlefeld, Jon F.; Ginn, James Cleveland, III; Clem, Paul Gilbert; Matias, Vladimir (Los Alamos National Laboratory, Los Alamos, NM)

2010-07-01T23:59:59.000Z

354

Crystal coherence length effects on the infrared optical response of MgO thin films  

SciTech Connect

The role of crystal coherence length on the infrared optical response of MgO thin films was investigated with regard to Reststrahlen band photon-phonon coupling. Preferentially (001)-oriented sputtered and evaporated ion-beam assisted deposited thin films were prepared on silicon and annealed to vary film microstructure. Film crystalline coherence was characterized by x-ray diffraction line broadening and transmission electron microscopy. The infrared dielectric response revealed a strong dependence of dielectric resonance magnitude on crystalline coherence. Shifts to lower transverse optical phonon frequencies were observed with increased crystalline coherence. Increased optical phonon damping is attributed to increasing granularity and intergrain misorientation.

Ihlefeld, J. F.; Ginn, J. C.; Rodriguez, M. A.; Kotula, P. G.; Carroll, J. F. III; Clem, P. G.; Sinclair, M. B. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Shelton, D. J.; Boreman, G. D. [College of Optics and Photonics/CREOL, University of Central Florida, Orlando, Florida 32816 (United States); Matias, V. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

2010-11-08T23:59:59.000Z

355

Interfacial studies of a thin-film Li2Mn4O9 electrode  

NLE Websites -- All DOE Office Websites (Extended Search)

Interfacial studies of a thin-film Li2Mn4O9 electrode Interfacial studies of a thin-film Li2Mn4O9 electrode Title Interfacial studies of a thin-film Li2Mn4O9 electrode Publication Type Journal Article Year of Publication 1999 Authors Kostecki, Robert, Fanping Kong, Yoshiaki Matsuo, and Frank R. McLarnon Journal Electrochimica Acta Volume 45 Pagination 225-233 Keywords interfacial films, manganese oxide electrode Abstract A thin-film spinel Li2Mn4O9 electrode was prepared by spin coating onto a Pt substrate. Spectroscopic ellipsometry, X-ray diffraction and current-sensing atomic force microscopy (CSAFM) were used to characterize interfacial processes and film formation at this electrode in the presence of 1.0 M LiPF6, EC:DMC (1:1 by volume) electrolyte. Prolonged exposure of the film to the electrolyte at ambient temperature resulted in spontaneous decomposition of the spinel to λ-MnO2 without disruption of the original structure. The surface of the resulting λ-MnO2 film exhibited no significant change in morphology, however a thin passive electrode surface layer was detected by the CSAFM probe. This electrode surface layer exhibited insulating properties and most likely contained Li2O, a by-product of Li2Mn4O9 decomposition.

356

Room temperature ferromagnetism in Co defused CdTe nanocrystalline thin films  

SciTech Connect

Nanocrystalline Co defused CdTe thin films were prepared using electron beam evaporation technique by depositing CdTe/Co/CdTe stacked layers with different Co thickness onto glass substrate at 373 K followed by annealing at 573K for 2 hrs. Structural, morphological and magnetic properties of of all the Co defused CdTe thin films has been investigated. XRD pattern of all the films exhibited zinc blende structure with <111> preferential orientation without changing the crystal structure of the films. The grain size of the films increased from 31.5 nm to 48.1 nm with the increase of Co layer thickness from 25nm to 100nm. The morphological studies showed that uniform texture of the films and the presence of Co was confirmed by EDAX. Room temperature magnetization curves indicated an improved ferromagnetic behavior in the films with increase of the Co thickness.

Rao, N. Madhusudhana; Kaleemulla, S.; Begam, M. Rigana [Materials Physics Division, School of Advanced Sciences, VIT University, Vellore - 632 014 (India)

2014-04-24T23:59:59.000Z

357

Flat panel display using Ti-Cr-Al-O thin film  

DOE Patents (OSTI)

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Jankowski, Alan F. (Livermore, CA); Schmid, Anthony P. (Solan Beach, CA)

2002-01-01T23:59:59.000Z

358

Deposition and characterization of polycrystalline silicon films on glass for thin film solar cells  

SciTech Connect

The authors deposit phosphorus-doped, amorphous Si by low pressure chemical vapor deposition and subsequently crystallize the films by furnace annealing at a temperature of 600 C. Optical in-situ monitoring allows one to control the crystallization process. Phosphorus doping leads to faster crystallization and a grain size enhancement with a maximum grain size of 15 {micro}m. Using transmission electron microscopy they find a log-normal grain size distribution in their films. They demonstrate that this distribution not only arises from solid phase crystallization of amorphous Si but also from other crystallization processes based on random nucleation and growth. The log-normal grain size distribution seems to be a general feature of polycrystalline semiconductors.

Bergmann, R.B.; Krinke, J.; Strunk, H.P.; Werner, J.H.

1997-07-01T23:59:59.000Z

359

Photovoltaic Single-Crystalline, Thin-Film Cell Basics | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Single-Crystalline, Thin-Film Cell Basics Single-Crystalline, Thin-Film Cell Basics Photovoltaic Single-Crystalline, Thin-Film Cell Basics August 20, 2013 - 2:50pm Addthis Single-crystalline thin films are made from gallium arsenide (GaAs), a compound semiconductor that is a mixture of gallium and arsenic. Gallium arsenide (GaAs) is a compound semiconductor, a mixture of gallium and arsenic. Gallium is a byproduct of the smelting of other metals, notably aluminum and zinc, and it is rarer than gold. Arsenic is not rare, but it is poisonous. Gallium arsenide has been developed for use in solar cells at about the same time that it has been developed for light-emitting diodes, lasers, and other electronic devices that use light. GaAs solar cells offer several benefits: The GaAs bandgap is 1.43 eV-nearly ideal for single-junction solar

360

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Program Manager, Solar Program Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be using technology pioneered at the Department of Energy's National Renewable Energy Lab (NREL). The record-breaking Cadmium-Telluride (CdTe) thin film photovoltaic technology GE has chosen for its solar panels was originally developed more than a decade ago by a team of scientists led by NREL's Xuanzhi Wu, and

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Femtosecond pump-probe studies of reduced graphene oxide thin films  

E-Print Network (OSTI)

The dynamics of photocarriers in reduced graphene oxide thin films is studied by using ultrafast pump-probe spectroscopy. Time dependent differential transmissions are measured with sample temperatures ranging from 9 to 300 K. At each sample...

Ruzicka, Brian Andrew; Werake, Lalani Kumari; Zhao, Hui; Wang, Shuai; Loh, Kian Ping

2010-04-01T23:59:59.000Z

362

Designing Randomness - The Impact of Textured Surfaces on the Efficiency of Thin-Film Solar Cells  

Science Journals Connector (OSTI)

We analyze experimentally and theoretically light localization at randomly textured ZnO surfaces and light absorption in thin-film amorphous Si deposited conformal on it. Guidance is...

Beckers, Thomas; Bittkau, Karsten; Carius, Reinhard; Fahr, Stephan; Rockstuhl, Carsten; Lederer, Falk

363

Design of plasmonic back structures for efficiency enhancement of thin-film amorphous Si solar cells  

Science Journals Connector (OSTI)

Metallic back structures with one-dimensional periodic nanoridges attached to a thin-film amorphous Si (a-Si) solar cell are numerically studied. At the interfaces between a-Si and...

Bai, Wenli; Gan, Qiaoqiang; Bartoli, Filbert; Zhang, Jing; Cai, Likang; Huang, Yidong; Song, Guofeng

2009-01-01T23:59:59.000Z

364

Plasmonic Back Structures Designed for Efficiency Enhancement of Thin Film Solar Cells  

Science Journals Connector (OSTI)

Metallic back structures with one-dimensional periodic nanoridges attached to thin-film amorphous silicon (a-Si) solar cell are proposed to enhance the cell efficiency in a wide...

Bai, Wenli; Gan, Qiaoqiang; Bartoli, Filbert; Song, Guofeng

365

Nanoscale Materials for Thin Film Cu(In,Ga)Se2 Solar Cells  

Science Journals Connector (OSTI)

Cu(In,Ga)Se2 solar cells show the highest efficiencies of all thin film technologies. Nano-particulate precursor materials could have the potential to lead this technology to...

Ahlswede, Erik

366

Optimization-based design of surface textures for thin-film Si solar cells  

E-Print Network (OSTI)

We numerically investigate the light-absorption behavior of thin-film silicon for normal-incident light, using surface textures to enhance absorption. We consider a variety of texture designs, such as simple periodic ...

Sheng, Xing

367

Polyelectrolyte multilayer thin films with antimicrobial, antifouling and drug releasing properties  

E-Print Network (OSTI)

This thesis work focuses on designing thin polyelectrolyte multilayer (PEM) films via layer-bylayer (LbL) deposition technique with the ability to kill pathogenic bacteria and inactivate human viruses, especially the ...

Wong, Sze Yinn (Sze Yinn Jessie)

2011-01-01T23:59:59.000Z

368

Efficient Föster energy transfer : from phosphorescent organic molecules to J-aggregate thin film  

E-Print Network (OSTI)

This thesis demonstrates the first ever use of Forster resonance energy transfer (FRET) to increase the quantum efficiency of a electrically pumped J-aggregate light emitting device (JLED). J-aggregate thin films are highly ...

Shirasaki, Yasuhiro

2008-01-01T23:59:59.000Z

369

Micro/nano devices fabricated from Cu-Hf thin films  

DOE Patents (OSTI)

An all-metal microdevice or nanodevice such as an atomic force microscope probe is manufactured from a copper-hafnium alloy thin film having an x-ray amorphous microstructure.

Luber, Erik J; Ophus, Colin; Mitlin, David; Olsen, Brian; Harrower, Christopher; Radmilovi, Velimir

2013-06-04T23:59:59.000Z

370

Apparatus for making cathodo- and photo- luminescent measurements of thin film phosphors  

E-Print Network (OSTI)

the understanding of the thin film phosphor, tungsten doped zinc oxide. Principally, a vacuum system is constructed and provides for both photo-and cathode-phosphor excitations. A measurement capability is then included. Finally, additions are mentioned...

Babuchna, Paul Michael

1998-01-01T23:59:59.000Z

371

Unpolarized emissivity of thin oil films over anisotropic Gaussian seas in infrared window regions  

Science Journals Connector (OSTI)

In this paper, we derive the unpolarized infrared (IR) emissivity of thin oil films over anisotropic Gaussian seas from a refined physical surface spectrum model of damping due to...

Pinel, Nicolas; Bourlier, Christophe; Sergievskaya, Irina

2010-01-01T23:59:59.000Z

372

Impurity and back contact effects on CdTe/CdS thin film solar cells.  

E-Print Network (OSTI)

??CdTe/CdS thin film solar cells are the most promising cost-effective solar cells. The goal of this project is to improve the performance for CdS/CdTe devices… (more)

Zhao, Hehong

2008-01-01T23:59:59.000Z

373

Polymeric precursor derived nanocrystalline ZnO thin films using EDTA as chelating agent  

E-Print Network (OSTI)

properties, ZnO has plausible electro-optical applications, such as, solar cells [1, 2], light- emitting diodes [3, 4], UV lasers [5], thin film transistors [6,7], and UV photodetectors [8]. Besides

Mohanty, Saraju P.

374

Transparent and Conductive Carbon Nanotube Multilayer Thin Films Suitable as an Indium Tin Oxide Replacement  

E-Print Network (OSTI)

Transparent electrodes made from metal oxides suffer from poor flexibility and durability. Highly transparent and electrically conductive thin films based on carbon nanotubes (CNTs) were assembled as a potential indium tin oxide (ITO) replacement...

Park, Yong Tae

2012-07-16T23:59:59.000Z

375

Photovoltaics, solar energy materials & thin films-IMRC 2006, Cancun, Mexico: Selected papers  

Science Journals Connector (OSTI)

The International symposium “Photovoltaics, Solar Energy Materials & Thin Films” was held in Cancun, Mexico from 20 to 24 August 2006. More...2 solar cells; and material characterization. A good...2 and the devic...

Xavier Mathew

2007-11-01T23:59:59.000Z

376

Development of CdTe thin film solar cells on flexible foil substrates.  

E-Print Network (OSTI)

??Cadmium telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal band gap of 1.45 eV, its high optical absorption… (more)

Hodges, Deidra Ranel

2009-01-01T23:59:59.000Z

377

CdTe/CdS Thin Film Solar Cells Fabricated on Flexible Substrates.  

E-Print Network (OSTI)

??Cadmium Telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal bandgap of 1.45 eV and its high optical absorption… (more)

Palekis, Vasilios

2011-01-01T23:59:59.000Z

378

Electron-reflector strategy for CdTe thin-film solar cells.  

E-Print Network (OSTI)

??The CdTe thin-film solar cell has a large absorption coefficient and high theoretical efficiency. Moreover, large-area photovoltaic panels can be economically fabricated. These features potentially… (more)

Hsiao, Kuo-Jui

2010-01-01T23:59:59.000Z

379

Strain effect on coercive field of epitaxial barium titanate thin films S. Choudhury,1,a  

E-Print Network (OSTI)

reduced to zero and coercive field electric field re- quired to reduce the net polarization to zero . From of magnitude higher compared to a thin film under zero substrate strain.11 However, some reports show

Chen, Long-Qing

380

Active-head sliders using piezoelectric thin films for flying height control  

Science Journals Connector (OSTI)

This paper describes design and fabrication of a MEMS-based active-head slider using a PZT thin film for flying height control in hard disk drives. A piezoelectric cantilever integrated in the ... air bearing sli...

Kenji Suzuki; Takayuki Akimatsu; Kenji Sasaki; Masayuki Kurita

2005-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Theory of first-order layering transitions in thin helium films  

E-Print Network (OSTI)

Thin liquid He-4 films on graphite show evidence of layered growth with increasing number density via a succession of first-order phase transitions. These so-called ''layering transitions'' separate uniformly covering phases, such as monolayers...

Saslow, WM; Agnolet, Glenn; Campbell, CE; Clements, BE; Krotscheck, E.

1996-01-01T23:59:59.000Z

382

Analysis of potential applications for the templated dewetting of metal thin films  

E-Print Network (OSTI)

Thin films have a high surface-to-volume ratio and are therefore usually morphologically unstable. They tend to reduce their surface energy through transport of mass by diffusion. As a result, they decay into a collection ...

Frantzeskakis, Emmanouil

2005-01-01T23:59:59.000Z

383

E-Print Network 3.0 - ag thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

new range of high... -stability thin-film resistors has been introduced to meet growing market requirements for passive components Source: Berns, Hans-Gerd - HaGe's homepage,...

384

Chemical vapor deposition of conjugated polymeric thin films for photonic and electronic applications  

E-Print Network (OSTI)

(cont.) Conjugated polymers have delocalized electrons along the backbone, facilitating electrical conductivity. As thin films, they are integral to organic semiconductor devices emerging in the marketplace, such as flexible ...

Lock, John P

2005-01-01T23:59:59.000Z

385

Layer-by-Layer Assembly of a pH-Responsive and Electrochromic Thin Film  

E-Print Network (OSTI)

This article summarizes an experiment on thin-film fabrication with layer-by-layer assembly that is appropriate for undergraduate laboratory courses. The purpose of this experiment is to teach students about self-assembly ...

Schmidt, Daniel J.

386

Metallic to insulating transition in disordered pulsed laser deposited silicide thin films.  

E-Print Network (OSTI)

??A metal-to-insulating transition has been observed in iron, iron oxide, iron silicide and cobalt silicide thin films when deposited on Si substrate with a native… (more)

Abou Mourad, Houssam

2005-01-01T23:59:59.000Z

387

Towards Large Area Industrial Cost Competitive Coating for Thin Film Solar Electricity Production  

Science Journals Connector (OSTI)

Thin film PV market faces a struggling situation due to the need of reducing strongly prices, which can be done by increasing efficiency and reducing fabrication costs. Improvement of...

Bermudez, Veronica

388

Earth-Abundant Materials for High-Efficiency Heterojunction Thin Film Solar Cells  

Science Journals Connector (OSTI)

We investigate materials for thin film solar cells that can meet tens of terawatts level deployment potential. As one of the candidates, cuprous oxide (Cu2O) is synthesized and...

Lee, Yun Seog; Bertoni, Mariana; Buonassisi, Tonio

389

Nanotribology: an UHV-SFM study on thin films of AgBr(001)  

Science Journals Connector (OSTI)

We performed scanning force microscopy (SFM) in ultrahigh vacuum (UHV) on AgBr thin films which were in... x tip and AgBr and NaCl, respectively. The two-dimensional histogram r...

R. Lüthi; E. Meyer; H. Haefke; L. Howald; H. -J. Güntherodt

1995-06-01T23:59:59.000Z

390

Thin film lithium-based batteries and electrochromic devices fabricated with nanocomposite electrode materials  

DOE Patents (OSTI)

Thin-film lithium-based batteries and electrochromic devices (10) are fabricated with positive electrodes (12) comprising a nanocomposite material composed of lithiated metal oxide nanoparticles (40) dispersed in a matrix composed of lithium tungsten oxide.

Gillaspie, Dane T; Lee, Se-Hee; Tracy, C. Edwin; Pitts, John Roland

2014-02-04T23:59:59.000Z

391

The bias-stress effect in pentacene organic thin-film transistors  

E-Print Network (OSTI)

Organic thin-film transistors (OTFTs) are promising for flexible large-area electronics. However, the bias-stress effect (BSE) in OTFTs causes operational instability that limits the usefulness of the OTFT technology in a ...

Ryu, Kyungbum

2010-01-01T23:59:59.000Z

392

Evaluation on the thin-film phase change material-based technologies  

E-Print Network (OSTI)

Two potential applications of thin film phase-change materials are considered, non-volatile electronic memories and MEMS (Micro-Electro-Mechanical Systems) actuators. The markets for those two applications are fast growing ...

Guo, Qiang, M. Eng. Massachusetts Institute of Technology

2006-01-01T23:59:59.000Z

393

Polycrystalline silicon thin-film solar cells on glass by ion-assisted deposition.  

E-Print Network (OSTI)

??Polycrystalline silicon (pc-Si, grain size > 1??m, no amorphous tissue) on glass is an interesting material for thin-film solar cells due to the low costs,… (more)

Straub, Axel

2005-01-01T23:59:59.000Z

394

Nanoparticle-based lift-off technique for ultra-thin nanoporous film preparation  

Science Journals Connector (OSTI)

Ultra-thin membrane with nanoscale through hole has great potential in biomedical applications, where precise controllability of porosity, pore size and film thickness is urgently required. The present work propo...

Wei Wang; Yu Zhao; YinHua Lei…

2008-06-01T23:59:59.000Z

395

Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)  

SciTech Connect

Capabilities fact sheet for the National Center for Photovoltaics: Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide that includes scope, core competencies and capabilities, and contact/web information.

Not Available

2011-06-01T23:59:59.000Z

396

Thermal Conductivity of Ordered Mesoporous Nanocrystalline Silicon Thin Films Made from Magnesium Reduction of Polymer-  

E-Print Network (OSTI)

Thermal Conductivity of Ordered Mesoporous Nanocrystalline Silicon Thin Films Made from Magnesium-assembly of mesoporous silica followed by magnesium reduction. The periodic ordering of pores in mesoporous silicon

Pilon, Laurent

397

Electrochemical properties of magnetron sputtered WO{sub 3} thin films  

SciTech Connect

Thin films of tungsten oxide (WO{sub 3}) were deposited on ITO substrates by using RF magnetron sputtering at oxygen and argon atmospheres of 6 Multiplication-Sign 10{sup -2}Pa and 4 Pa respectively. The chemical composition and surface morphology of the WO{sub 3} thin films have been studied by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) respectively. The results indicate that the deposited WO{sub 3} thin films are nearly stoichiometric. The electrochemical performances of the WO{sub 3} thin films have been evaluated by galvonostatic charging/discharging method. The discharge capacity was 15{mu}Ah/cm{sup 2}{mu}m at the initial cycle and faded rapidly in the first few cycles and stabilized at a lesser stage.

Madhavi, V.; Kondaiah, P.; Hussain, O. M.; Uthanna, S. [Department of Physics, Sri Venkateswara University, Tirupati - 517 502 (India)

2013-02-05T23:59:59.000Z

398

Technological assessment of light-trapping technology for thin-film Si solar cell  

E-Print Network (OSTI)

The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was analyzed from the technology, market, and ...

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

399

Integrated photonic structures for light trapping in thin-film Si solar cells  

E-Print Network (OSTI)

We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

Sheng, Xing

400

Kläui Ligand Thin Films for Rapid Plutonium Analysis by Alpha Spectrometry  

Science Journals Connector (OSTI)

Safety Considerations ... To further assess the use of the Kläui ligand thin films for environmental samples, a sample of contaminated Rocky Flats soil (NIST Standard Reference Material 4353A) was analyzed for plutonium. ...

Susan K. Hanson; Alexander H. Mueller; Warren J. Oldham, Jr.

2014-01-07T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Effect of the nitrogen ion energy on the MBE growth of thin gallium nitride films  

Science Journals Connector (OSTI)

The influence of the energy of bombarding nitrogen ions on the growth of thin gallium nitride (GaN) films under molecular beam epitaxy (MBE) conditions has been simulated using the method of balance kinetic eq...

D. V. Kulikov; Yu. V. Trushin; V. S. Kharlamov

2010-03-01T23:59:59.000Z

402

Single Source Electron Beam Evaporation of Bi-Sr-Ca-Cu-O Thin Films  

Science Journals Connector (OSTI)

A modified electron beam evaporation technique for the deposition of BiSrCaCuO thin films has been developed. In contrast to the conventional hearthed electron beam crucible the design in the present study use...

M. Ghanashyam Krishna; G. K. Muralidhar…

1990-01-01T23:59:59.000Z

403

Dimensional dependence of electric resistance of thin TiB2 films  

Science Journals Connector (OSTI)

The dimensional effect of electrical resistance in thin films of TiB2 has been studied. Experimental results were processed within the framework of the Fuchs-Sondheimer theory. This has enabled us to estimate the...

A. S. Dranenko; L. A. Dvorina

404

Photocatalytic performance of TiO2 thin films connected with Cu micro-grid  

Science Journals Connector (OSTI)

Aiming at reducing the recombination of photo-induced carriers in semiconductor photocatalytic process, we prepared TiO2...thin film with its surface modified by a connected Cu micro-grid via a microsphere lithog...

HaiLing Zhu; JunYing Zhang; TianMin Wang…

2009-08-01T23:59:59.000Z

405

Energy collection and charge transfer processes in thin film photocells and photoelectrochemical cells: Final report  

SciTech Connect

The following paragraphs describe accomplishments and significant results for the two lines of research: (1) studies of energy collection and charge transfer processes in thin film systems and (2) solar energy utilization by photosensitized electrode processes at semiconductor electrodes.

Tachikawa, Hiroyasu

1981-12-31T23:59:59.000Z

406

Layer-by-layer assembly of electrically conductive polymer thin films  

E-Print Network (OSTI)

) to deposit layers of carbon black that are pre-stabilized with polyethylenimine (PEI) and poly(acrylic acid) (PAA) (see chemical structures in Fig. 3). The resulting films are thin, flexible, and relatively dense, with a high concentration of carbon black... within the deposition mixtures is described in Chapter III. Materials and Methods Materials Two types of polymers were used to stabilize carbon black for layer-by-layer (LbL) assembly of composite thin films. Poly(acrylic acid) (PAA...

Jan, Chien Sy Jason

2007-09-17T23:59:59.000Z

407

Metal-semiconductor hybrid thin films in field-effect transistors  

SciTech Connect

Metal-semiconductor hybrid thin films consisting of an amorphous oxide semiconductor and a number of aluminum dots in different diameters and arrangements are formed by electron beam lithography and employed for thin-film transistors (TFTs). Experimental and computational demonstrations systematically reveal that the field-effect mobility of the TFTs enhances but levels off as the dot density increases, which originates from variations of the effective channel length that strongly depends on the electric field distribution in a transistor channel.

Okamura, Koshi, E-mail: koshi.okamura@kit.edu; Dehm, Simone [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany)] [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany); Hahn, Horst [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany) [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany); KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt, Petersenstr. 32, 64287 Darmstadt (Germany)

2013-12-16T23:59:59.000Z

408

Vibrational spectra of CO adsorbed on oxide thin films: A tool to probe the surface defects and phase changes of oxide thin films  

SciTech Connect

Thin films of iron oxide were grown on Pt(111) single crystals using cycles of physical vapor deposition of iron followed by oxidative annealing in an ultrahigh vacuum apparatus. Two procedures were utilized for film growth of ?15–30 ML thick films, where both procedures involved sequential deposition+oxidation cycles. In procedure 1, the iron oxide film was fully grown via sequential deposition+oxidation cycles, and then the fully grown film was exposed to a CO flux equivalent to 8 × 10{sup ?7} millibars, and a vibrational spectrum of adsorbed CO was obtained using infrared reflection-absorption spectroscopy. The vibrational spectra of adsorbed CO from multiple preparations using procedure 1 show changes in the film termination structure and/or chemical nature of the surface defects—some of which are correlated with another phase that forms (“phase B”), even before enough of phase B has formed to be easily detected using low energy electron diffraction (LEED). During procedure 2, CO vibrational spectra were obtained between deposition+oxidation cycles, and these spectra show that the film termination structure and/or chemical nature of the surface defects changed as a function of sequential deposition+oxidation cycles. The authors conclude that measurement of vibrational spectra of adsorbed CO on oxide thin films provides a sensitive tool to probe chemical changes of defects on the surface and can thus complement LEED techniques by probing changes not visible by LEED. Increased use of vibrational spectra of adsorbed CO on thin films would enable better comparisons between films grown with different procedures and by different groups.

Savara, Aditya, E-mail: savaraa@ornl.gov [Chemical Sciences Division, Oak Ridge National Lab, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831 (United States)

2014-03-15T23:59:59.000Z

409

Indium doped zinc oxide nanowire thin films for antireflection and solar absorber coating applications  

SciTech Connect

Indium doped ZnO nanowire thin films were prepared by thermal oxidation of Zn-In metal bilayer films at 500°C. The ZnO:In nanowires are 20-100 nm in diameter and several tens of microns long. X-ray diffraction patterns confirm the formation of oxide and indicate that the films are polycrystalline, both in the as deposited and annealed states. The transmission which is <2% for the as deposited Zn-In films increases to >90% for the ZnO:In nanowire films. Significantly, the reflectance for the as deposited films is < 10% in the region between 200 to 1500 nm and < 2% for the nanowire films. Thus, the as deposited films can be used solar absorber coatings while the nanowire films are useful for antireflection applications. The growth of nanowires by this technique is attractive since it does not involve very high temperatures and the use of catalysts.

Shaik, Ummar Pasha [ACRHEM, University of Hyderabad, Hyderabad-500046 (India); Krishna, M. Ghanashyam, E-mail: mgksp@uohyd.ac.in [ACRHEM and School of Physics, University of Hyderabad, Hyderabad-500046 (India)

2014-04-24T23:59:59.000Z

410

Influence of the process parameters on the spray pyrolysis technique, on the synthesis of gadolinium doped-ceria thin film  

SciTech Connect

Graphical abstract: Gas-tight CGO made by spray pyrolysis suitable to be used as SOFC electrolyte. Display Omitted Highlights: ? Dense and crystalline CGO films deposited by spray pyrolysis on various substrates. ? Solvent did not have a strong influence on the film microstructure, defect concentration or thickness. ? The substrate did not have a strong influence on the film microstructure, defect concentration or thickness. ? Films with at least 2.5 ?m of thickness presented high impermeability. ? The films obtained are suitable to use as a SOFC electrolyte. -- Abstract: This work presents the results of a process of optimization applied to gadolinia-doped ceria (Ce{sub 0.8}Gd{sub 0.2}O{sub 1.9?x}, or CGO) thin films, deposited by spray pyrolysis (SP). Spray pyrolysis is a high thermal deposition method that combines material deposition and heat treatment. This combination is advantageous since the post-deposition heat treatment step is not necessary. However, stresses are solidified in the coating during the deposition, which may lead to the initiation of a crack in the coating. The aim of this work was to achieve thin, dense, and continuous CGO coatings, which may be used as gas separation membranes and as a solid state electrochemical interfaces. Dense, flat, low-defect substrates such as silica slides, silicon mono crystal wafers, and porous substrates were used as substrates in this work. Cerium ammonium nitrate and gadolinium acetylacetonate were dissolved in ethanol and butyl carbitol to form a precursor solution that was sprayed on the heated substrates. Process parameters such as solvent composition, deposition rate and different heating regimes were analyzed. The microstructure was analyzed by secondary electron microscopy (SEM) and was found that thin, dense, and defect-free films could be produced on dense and porous substrates. The results obtained show that it is possible to obtain a CGO dense film deposited by spray pyrolysis. X-ray diffraction (XRD) analysis showed that the films were crystalline after the deposition without requiring post-deposition heat treatment. The crystallite size does not vary significantly as a function of the annealing temperature.

Halmenschlager, C.M., E-mail: cibelemh@yahoo.com.br [Laboratory of Materials Ceramic LACER/PPGEM, Federal University of Rio Grande do Sul, Av. Osvaldo Aranha, 99/705C, CEP: 90035-190, Porto Alegre, RS (Brazil); National Research Council, Institute for Fuel Cell Innovation NRC-IFCI, 4250 Wesbrook Mall, V6T 1W5 Vancouver, BC (Canada); Neagu, R. [National Research Council, Institute for Fuel Cell Innovation NRC-IFCI, 4250 Wesbrook Mall, V6T 1W5 Vancouver, BC (Canada)] [National Research Council, Institute for Fuel Cell Innovation NRC-IFCI, 4250 Wesbrook Mall, V6T 1W5 Vancouver, BC (Canada); Rose, L. [National Research Council, Institute for Fuel Cell Innovation NRC-IFCI, 4250 Wesbrook Mall, V6T 1W5 Vancouver, BC (Canada) [National Research Council, Institute for Fuel Cell Innovation NRC-IFCI, 4250 Wesbrook Mall, V6T 1W5 Vancouver, BC (Canada); Department of Materials Engineering, V6T 1Z1 Vancouver, BC (Canada); Malfatti, C.F. [Laboratory of Research in Corrosion LAPEC/PPGEM, Federal University of Rio Grande do Sul, Av. Bento Gonçalves, 9500, Setor 4, Prédio 75/2° Andar, CEP: 91501-970, Campus do Vale, Porto Alegre, RS (Brazil)] [Laboratory of Research in Corrosion LAPEC/PPGEM, Federal University of Rio Grande do Sul, Av. Bento Gonçalves, 9500, Setor 4, Prédio 75/2° Andar, CEP: 91501-970, Campus do Vale, Porto Alegre, RS (Brazil); Bergmann, C.P. [Laboratory of Materials Ceramic LACER/PPGEM, Federal University of Rio Grande do Sul, Av. Osvaldo Aranha, 99/705C, CEP: 90035-190, Porto Alegre, RS (Brazil)] [Laboratory of Materials Ceramic LACER/PPGEM, Federal University of Rio Grande do Sul, Av. Osvaldo Aranha, 99/705C, CEP: 90035-190, Porto Alegre, RS (Brazil)

2013-02-15T23:59:59.000Z

411

Nanoengineered Thin Films for Solid Oxide Fuel Cells  

E-Print Network (OSTI)

, electrolyte and their interface to achieve high performance. First, a bi-layer method has been developed to prepare La0.5Sr0.5CoO3 (LSCO) cathode by combining a pulsed laser deposition (PLD) technique and a screen printing method. It provides a cost...

Su, Qing

2013-11-21T23:59:59.000Z

412

Enhanced stability of a dewetting thin liquid film in a single-frequency vibration field S. Shklyaev,1  

E-Print Network (OSTI)

amplitude equation for the averaged film thickness. We show that there exists a window in the frequencyEnhanced stability of a dewetting thin liquid film in a single-frequency vibration field S; published 31 March 2008 Dynamics of a thin dewetting liquid film on a vertically oscillating substrate

Khenner, Mikhail

413

Thin Film Cracking Modulated by Underlayer Creep by J. Liang, R. Huang, J.H. Prvost, and Z. Suo  

E-Print Network (OSTI)

: subcritical decohesion at the crack tip, and creep in the underlayer. In a thin-film microbridge over for the growth rate per temperature cycle of a channel crack in a brittle film, induced by ratcheting plasticThin Film Cracking Modulated by Underlayer Creep by J. Liang, R. Huang, J.H. Prévost, and Z. Suo

Huang, Rui

414

Bendable single crystal silicon thin film transistors formed by printing on plastic substrates  

E-Print Network (OSTI)

Bendable single crystal silicon thin film transistors formed by printing on plastic substrates E on plastic substrates using an efficient dry transfer printing technique. In these devices, free standing-Si is then transferred, to a specific location and with a controlled orientation, onto a thin plastic sheet

Rogers, John A.

415

May 2003 NREL/CP-520-33933 Amorphous and Thin-Film  

E-Print Network (OSTI)

Roedern, J. Yang, P. Sims, X. Deng, V. Dalal, D. Carlson, and T. Wang Presented at the National and Thin-Film Silicon Brent P. Nelson,1 Harry A. Atwater,2 Bolko von Roedern,1 Jeff Yang,3 Paul Sims,4. (c) "Thin Silicon-on-Ceramic Solar Cells" by Paul Sims. (d

Deng, Xunming

416

Epitaxial Pb(Zr, Ti)O3 thin films with coexisting tetragonal and rhombohedral phases  

Science Journals Connector (OSTI)

Epitaxial Pb(Zr, Ti)O3 thin films having coexisting tetragonal and rhombohedral phases have been successfully fabricated with the film compositions that correspond to the Zr-rich region of the morphotropic phase boundary (MPB). The key to the present success is to quantitatively understand the shift of the MPB under a film stress. The present fabrication has been theoretically justified by superimposing the computed temperature-dependent film stress on the theoretical temperature-stress (T-S) phase diagram and by delineating a probable phase-transition path upon cooling the film from the processing temperature.

S. Hoon Oh and Hyun M. Jang

2001-03-12T23:59:59.000Z

417

Blue photoluminescence in ZnGa{sub 2}O{sub 4} thin-film phosphors  

SciTech Connect

The growth and properties of luminescent ZnGa{sub 2}O{sub 4} thin films using pulsed laser ablation has been investigated. As-deposited films on glass and (100) MgO substrates exhibit blue-white photoluminescence with a broad emission band under ultraviolet excitation. In situ epitaxial films obtained on single crystal (100) MgO substrates possess enhanced luminescent intensity as compared to polycrystalline films on glass substrates. The enhanced luminescence in epitaxial films presumably reflects lower defect densities due to growth on low energy surfaces.

Lee, Yong Eui; Norton, David P.; Park, Chan; Rouleau, Christopher M.

2001-02-01T23:59:59.000Z

418

41.4: Discontinuous Alignment Thin-Film Formation by Self-Organized Dewetting  

E-Print Network (OSTI)

41.4: Discontinuous Alignment Thin-Film Formation by Self-Organized Dewetting Chung-Yung Lee, Man alignment layer [4]. In this paper, we study the formation of a discontinuous alignment film by a dewetting be produced. The alignments produced are robust. Moreover, the processing window is also maximized. 2

419

Analysis of a compressed thin film bonded to a compliant substrate: the energy scaling law  

E-Print Network (OSTI)

of Mathematical Sciences, New York University, kohn@cims.nyu.edu Department of Mathematics, UniversityAnalysis of a compressed thin film bonded to a compliant substrate: the energy scaling law Robert V energy, i.e. the membrane and bending energy of the film plus the elastic energy of the substrate

420

Layer-by-Layer Assembly of Clay-filled Polymer Nanocomposite Thin Films  

E-Print Network (OSTI)

A variety of functional thin films can be produced using the layer-by-layer assembly technique. In this work, assemblies of anionic clay and cationic polymer were studied with regard to film growth and gas barrier properties. A simple, yet flexible...

Jang, Woo-Sik

2010-01-14T23:59:59.000Z

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Daylighting control performance of a thin-film ceramic electrochromic window: field study results  

E-Print Network (OSTI)

1 Daylighting control performance of a thin-film ceramic electrochromic window: field study results-film electrochromic (EC) windows were initiated at the new full-scale Window Systems testbed facility at the Lawrence of this emerging technology. Keywords: Building energy-efficiency; Electrochromic windows; Daylighting; Control

422

DISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

-scale problems such as energy demand, pollution, and environment safety. The cost ($/kWh) is the primaryDISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS AND MODULES WITH 2-D-FILM SOLAR CELLS AND MODULES WITH 2-D SIMULATIONS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS

Sites, James R.

423

A study of plasma modification of low k polyimide thin film  

E-Print Network (OSTI)

. The effect of post metal annealing and a SiN[x] barrier layer between metal and polyimide on the properties of the polyimide film was studied. Plasma-modified, low k (dielectric constant), polyimide thin film has been studied for the future interlayer...

Chung, Taewoo

2002-01-01T23:59:59.000Z

424

Thin film optical waveguide and optoelectronic device integration for fully embedded board level optical interconnects  

E-Print Network (OSTI)

Thin film optical waveguide and optoelectronic device integration for fully embedded board level on to the waveguide film. Measured propagation loss of the waveguide was 0.3dB/cm at 850nm. Keywords: optoelectronic between electronic and optoelectronic components as conventional approaches do, and additionally, real

Chen, Ray

425

Optical approach to thermopower and conductivity measurements in thin-film semiconductors  

SciTech Connect

An optical beam deflection technique is applied to measure the Joule and Peltier heat generated by electric currents through thin-film semiconductors. The method yields a spatially resolved conductivity profile and allows the determination of Peltier coefficients. Results obtained on doped hydrogenated amorphous silicon films are presented.

Dersch, H.; Amer, N.M.

1984-08-01T23:59:59.000Z

426

Mechanical properties of surface modified silica low-k thin films  

Science Journals Connector (OSTI)

The surface modification of sol-gel deposited low-k thin films has been carried out successfully by trimethylchlorosilane (TMCS) using wet chemical treatment method. Ellipsometer is used to determine the thickness of films. The changes in chemical structure ... Keywords: Contact angle, Hydrophobic, Nano-indentation, Sol-gel, Surface modification

Yogesh S. Mhaisagar; Bhavana N. Joshi; Ashok M. Mahajan

2014-02-01T23:59:59.000Z

427

Formation and post-deposition compression of smooth and processable silicon thin films from nanoparticle suspensions  

E-Print Network (OSTI)

nanoparticle suspensions Noah T. Jafferisa) and James C. Sturm Department of Electrical Engineering, Princeton and processable silicon thin-films from single-crystal silicon-nanoparticle suspensions. Single-crystal Si-nanoparticles on printing silicon from nanoparticles has shown much promise.3,4 Ha¨rting et al.4 report screen-printed films

428

Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells  

E-Print Network (OSTI)

of solar energy conversion be- cause they use thin films of photoactive material and can be manufactured achieving complete optical absorption and good carrier transport. A photoactive film thickness of 200 nm charge transport to allow for complete carrier extraction. To address this trade-off, absorption en

Fan, Shanhui

429

Atomic hydrogen interactions with amorphous carbon thin films Bhavin N. Jariwala,1  

E-Print Network (OSTI)

Atomic hydrogen interactions with amorphous carbon thin films Bhavin N. Jariwala,1 Cristian V-scale interactions of H atoms with hydrogenated amorphous carbon a-C:H films were identified using molecular dynamics through a detailed analysis of the MD trajectories. The MD simulations showed that hydrogenation occurs

Ciobanu, Cristian

430

Longitudinal-optical-vibration-induced high transparency of nominally opaque thin films  

Science Journals Connector (OSTI)

It has been theoretically demonstrated that a presence of a very thin cubic crystal film deposited on a substrate can substantially modify infrared optical properties of the structure. The effect is due to excitation of longitudinal-optical vibrations within the film.

R. Dragila and S. Vukovic

1990-02-15T23:59:59.000Z

431

Evolving crack patterns in thin films with the extended finite element method  

E-Print Network (OSTI)

-exist in the film. To describe subcritical crack growth, we prescribe a kinetic law that relates the crack velocity is susceptible to subcritical cracking, obeying a kinetic law that relates the velocity of each crack to its Elsevier Science Ltd. All rights reserved. Keywords: Crack patterns; Subcritical cracking; Thin films

Suo, Zhigang

432

Surface characterization and electronic structure of HgTe nanocrystalline thin films  

Science Journals Connector (OSTI)

Mercury telluride (HgTe) nanocrystalline thin films were synthesized using an electrochemical deposition technique. The surface morphology of the thin films were investigated by atomic force microscopy (AFM) as a function of the film thickness which shows that an increase in film thickness increases the surface roughness. The scaling exponents such as roughness exponent, ? and growth exponent, ? associated with the film growth, determined from surface and power spectral analysis using AFM are found to be 0.88±0.05 and 0.21±0.04 respectively. The shifting of the valence and core levels to higher binding energy as evidenced from x-ray photoelectron spectroscopy, suggest the change in electronic structure of the nano-HgTe films possibly due to the surface roughness.

S. Rath, D. Paramanik, S. N. Sarangi, S. Varma, and S. N. Sahu

2005-11-08T23:59:59.000Z

433

Fabrication of Yttria stabilized zirconia thin films on poroussubstrates for fuel cell applications  

SciTech Connect

A process for the deposition of yttria stabilized zirconia (YSZ) films, on porous substrates, has been developed. These films have possible applications as electrolyte membranes in fuel cells. The films were deposited from colloidal suspensions through the vacuum infiltration technique. Films were deposited on both fully sintered and partially sintered substrates. A critical cracking thickness for the films was identified and strategies are presented to overcome this barrier. Green film density was also examined, and a method for improving green density by changing suspension pH and surfactant was developed. A dependence of film density on film thickness was observed, and materials interactions are suggested as a possible cause. Non-shorted YSZ films were obtained on co-fired substrates, and a cathode supported solid oxide fuel cell was constructed and characterized.

Leming, Andres

2003-06-16T23:59:59.000Z

434

November 20, 2002 A. R. Raffray, et al., Thin Liquid Wall Behavior under IFE Cyclic Operation 1 Thin Liquid Wall Behavior under IFE Cyclic Operation  

E-Print Network (OSTI)

by solid blanket at the back for high efficiency · Major issues: ­ Film establishment and coverage · Film · Film Establishment and Coverage ­ Wetted wall ­ Forced film flow · Film Condensation · Aerosol Thin film dynamics ÿ Condensation ÿ Aerosol formation and behavior ÿ These are assessed here with Pb

Raffray, A. René

435

Titanium nitride thin films deposited by reactive pulsed-laser ablation in RF plasma  

Science Journals Connector (OSTI)

Titanium nitride thin films were deposited on Si (100) substrates by pulsed laser ablation of a titanium target in a N2 atmosphere (gas pressure approx. 10 Pa) using a doubled frequency Nd:YAG laser (532 nm) also assisted by a 13.56-MHz radio frequency (RF) plasma. Deposition was carried out at various substrate temperatures ranging from 373 up to 873 K and films were analyzed by X-ray diffractometry, scanning electron microscopy and optical emission spectroscopy. A comparison between the ‘normal’ pulsed laser deposition (PLD) and the RF plasma-assisted PLD showed the influence of the plasma on the structural characteristics of the thin films.

A. Giardini; V. Marotta; S. Orlando; G.P. Parisi

2002-01-01T23:59:59.000Z

436

Method of preparing high-temperature-stable thin-film resistors  

DOE Patents (OSTI)

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Raymond, L.S.

1980-11-12T23:59:59.000Z

437

Investigation of hexadecanethiol self-assembled monolayers on cadmium tin oxide thin films  

Science Journals Connector (OSTI)

This study reports the use of variable angle reflectance Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy to investigate the formation of a 1-hexadecanethiol adlayer on cadmium tin oxide (CTO) thin film surfaces. These adlayers appear to be robust, ordered monolayers. The optical and electronic properties of CTO thin films chemically vapor deposited onto glass substrates were also investigated. The reflectance of the CTO films was dependent upon the incident angle of the impinging radiation and revealed a reflectance decrease indicative of a plasma frequency in the mid-IR using p-polarized radiation.

Crissy L. Rhodes; Scott H. Brewer; Jaap Folmer; Stefan Franzen

2008-01-01T23:59:59.000Z

438

Method of preparing high-temperature-stable thin-film resistors  

DOE Patents (OSTI)

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Raymond, Leonard S. (Tucson, AZ)

1983-01-01T23:59:59.000Z

439

Growth and characterization of Pt-protected Gd5Si4 thin films  

SciTech Connect

Successful growth and characterization of thin films of giant magnetocaloric Gd5(SixGe1?x)4 were reported in the literature with limited success. The inherent difficulty in producing this complex material makes it difficult to characterize all the phases present in the thin films of this material. Therefore, thin film of binary compound of Gd5Si4 was deposited by pulsed laser deposition. It was then covered with platinum on the top of the film to protect against any oxidation when the film was exposed to ambient conditions. The average film thickness was measured to be approximately 350?nm using a scanning electron microscopy, and the composition of the film was analyzed using energy dispersive spectroscopy. X-ray diffraction analysis indicates the presence of Gd5Si4 orthorhombic structure along with Gd5Si3 secondary phase. The transition temperature of the film was determined from magnetic moment vs. temperature measurement. The transition temperature was between 320 and 345?K which is close to the transition temperature of the bulk material. Magnetic moment vs. magnetic field measurement confirmed that the film was ferromagnetic below 342?K.

Hadimani, R. L.; Mudryk, Y.; Prost, T. E.; Pecharsky, V. K.; Gschneidner, K. A.; Jiles, D. C.

2014-05-07T23:59:59.000Z

440

1 000 000 "C/s thin film electrical heater: ln situ resistivity measurements of Al and Ti/Si thin films during ultra rapid thermal annealing  

E-Print Network (OSTI)

introduce a new technique for rapidly heating (10' "C/s) thin films using an electrical thermal annealing- ently, most commercial RTA systems use radiation-heating techniques via tungsten-halogen lamps. These systems typi- cally have a maximum heating rate of 100-300 "C/s. We introduce an alternative methodfor

Allen, Leslie H.

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films  

SciTech Connect

Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2? = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (?E) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, ?. The value of n and k increases with the increase of substrate temperature.

Kumar, B. Rajesh, E-mail: rajphyind@gmail.com [Department of Physics, Sri Venkateswara University, Tirupati - 517 502, A.P, India and Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India); Hymavathi, B.; Rao, T. Subba [Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India)

2014-01-28T23:59:59.000Z

442

Structural and Magnetic Properties of Epitaxial MnSi(111) Thin Films.  

E-Print Network (OSTI)

??MnSi(111) films were grown on Si(111) substrates by solid phase epitaxy (SPE) and molecular beam epitaxy (MBE) to determine their magnetic structures. A lattice mismatch… (more)

Karhu, Eric

2012-01-01T23:59:59.000Z

443

A novel integrated structure of thin film GaN LED with ultra-low thermal resistance  

Science Journals Connector (OSTI)

This study proposes a novel packaging structure for vertical thin-GaN LED applications by integration of LED chip and silicon-based packaging process. The vertical thin film LED is...

Wen, Shih-Yi; Hu, Hung-Lieh; Tsai, Yao-Jun; Hsu, Chen-Peng; Lin, Re-Ching; Horng, Ray Hua

2014-01-01T23:59:59.000Z

444

Effects of Counterions on Nano-confined DNA Thin Films  

E-Print Network (OSTI)

DNA molecules spin-coated on amorphous quartz substrates are shown to form stable films. Electron density profiles (EDPs) along the film depth show that film prepared from aqueous solution of DNA exhibits layering of the molecules in three stacks parallel to the substrate whereas film prepared from counterion added solution does not have layering but have smaller thickness and enhanced surface roughness, although both films have 'liquid-like' height-height correlations. We explain these results by a model of film of a 'liquid' comprising of rod-like molecules where the counterion concentration in the liquid determines the rod length.

Nupur Biswas; Sreeja Chakraborty; Alokmay Datta; Munna Sarkar; Mrinmay K. Mukhopadhyay; Mrinal K. Bera; Hideki Seto

2014-04-03T23:59:59.000Z

445

Decomposition mechanisms in thermally-aged thin-film explosives  

SciTech Connect

The isothermal decomposition of nitrocellulose (NC) has been examined using two substantially different experimental techniques, involving both confined and unconfined samples. The confined isothermal aging technique involved confined thin-film samples heated to temperatures of 150 to 170{degrees}C, for 1 to 72 hours. Condensed-phase chemistry was monitored real-time using FTIR. Results indicated that the first step in decomposition was scission of the O-NO{sub 2} bond and subsequent formation of carbonyl and hydroxyl products. Scission of the O-NO{sub 2} bond appeared to occur by a first-order reaction. The Arrhenius expression for the first-order reaction rate constant was evaluated from the experimental data. The unconfined rapid isothermal decomposition technique involved both high speed-photography and time-of-flight mass spectrometry (TOFMS). Mass spectra obtained from experiments at 420{degrees}C indicated that NO{sub 2} formation and, therefore, scission of the O-NO{sub 2} bond occurred by a first order reaction, the rate constant for which was evaluated from the experimental data. The rate constant for global pseudo-first order decomposition of NC at 450{degrees}C was also estimated from high speed photography results. Rate constants at 420 and 450{degrees}C were predicted using the Arrhenius expression developed from the confined isothermal aging results and were in good agreement with the rate constants obtained at those temperatures in the unconfined rapid decomposition experiments using TOFMS and high-speed photography. Results from these substantially different measurements gave consistent results over a temperature range of about 300{degrees}C, in which reaction rates vary by nine orders of magnitude, and indicate that the two experimental techniques being developed have good potential for studying condensed-phase decomposition of energetic materials.

Erickson, K.L.; Trott, W.M.; Renlund, A.M.

1994-10-01T23:59:59.000Z

446

The origin of white luminescence from silicon oxycarbide thin films  

SciTech Connect

Silicon oxycarbide (SiC{sub x}O{sub y}) is a promising material for achieving strong room-temperature white luminescence. The present work investigated the mechanisms for light emission in the visible/ultraviolet range (1.5–4.0?eV) from chemical vapor deposited amorphous SiC{sub x}O{sub y} thin films, using a combination of optical characterizations and electron paramagnetic resonance (EPR) measurements. Photoluminescence (PL) and EPR studies of samples, with and without post-deposition passivation in an oxygen and forming gas (H{sub 2} 5 at.?% and N{sub 2} 95 at.?%) ambient, ruled out typical structural defects in oxides, e.g., Si-related neutral oxygen vacancies or non-bridging oxygen hole centers, as the dominant mechanism for white luminescence from SiC{sub x}O{sub y}. The observed intense white luminescence (red, green, and blue emission) is believed to arise from the generation of photo-carriers by optical absorption through C-Si-O related electronic transitions, and the recombination of such carriers between bands and/or at band tail states. This assertion is based on the realization that the PL intensity dramatically increased at an excitation energy coinciding with the E{sub 04} band gaps of the material, as well as by the observed correlation between the Si-O-C bond density and the PL intensity. An additional mechanism for the existence of a blue component of the white emission is also discussed.

Nikas, V.; Gallis, S., E-mail: sgalis@us.ibm.com; Huang, M.; Kaloyeros, A. E. [College of Nanoscale Sciences and Engineering, State University of New York, Albany, New York 12203 (United States); Nguyen, A. P. D.; Stesmans, A.; Afanas'ev, V. V. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium)

2014-02-10T23:59:59.000Z

447

Substrate effects on the growth of MGCL2 thin films  

SciTech Connect

The dependence of the overlayer growth on the underlying substrate is illustrated in this study of MgCl{sub 2} thin films on the following substrates: Pd(111), Pt(111), Pd(100) and Rh(111). On Pd(111) and Pt(111), the TPD of the deposited MgCl{sub 2} showed a significant substrate-adsorbate interaction as evidenced by a monolayer desorption feature. The interaction was further attested by the formation of two monolayers LEED patterns -- Pd(111)-(4x4)-MgCl{sub 2} and Pd(111)-({radical}13 x {radical}13)-R 13.9{degrees}-MgCl{sub 2}. Also, on Pd(111) and Pt(111), a multilayer coverage pattern was grown, MgCl{sub 2} (1 x 1). When Pd(100) was used as the substrate, the monolayer desorption feature disappeared from the TPD as well as the two monolayer patterns seen on Pd(111), but a MgCl{sub 2} (1 x 1) pattern with multiple rotated domains was created as the multilayer coverage. This difference resulted from the fact that the Pd(100) does not possess the correct angle for the (0001) face of the MgCl{sub 2}. To preserve this angle, the deposition of MgCl{sub 2} was performed on Rh(111) and the reconstructed face of Pt(100). Again, evidence of the strong substrate-adsorbate interaction was gone. The buckling of Pt(100)`s surface layer caused this result. For the Rh(111), the lattice match was not preserved with the angle.

Roberts, J.G.; Fairbrother, D.H.; Somorjai, G.A. [Univ. of California, Berkeley, CA (United States); [Lawrence Berkeley National Lab., CA (United States)

1997-12-31T23:59:59.000Z

448

Effect of Fe-ion implantation doping on structural and optical properties of CdS thin films  

Science Journals Connector (OSTI)

We report on effects of Fe implantation doping-induced changes in structural, optical, morphological, and vibrational properties of cadmium sulfide thin films. Films were implanted with 90 keV Fe+ ions at room te...

S. Chandramohan; A. Kanjilal; S. N. Sarangi; S. Majumder…

2010-06-01T23:59:59.000Z

449

A quantitative model for interpreting nanometer scale hardness measurements of thin films  

SciTech Connect

A model was developed to determine hardness of thin films from hardness versus depth curves, given film thickness and substrate hardness. The model is developed by dividing the measured hardness into film and substrate contributions based on the projected areas of both the film and substrate under the indenter. The model incorporates constraints on the deformation of the film by the surrounding material in the film, the substrate, and friction at the indenter/film and film/substrate interfaces. These constraints increase the pressure that the film can withstand and account for the increase in measured hardness as the indenter approaches the substrate. The model is evaluated by fitting the predicted hardness versus depth curves obtained from titanium and Ta{sub 2}O{sub 5} films of varying thicknesses on sapphire substrates. The model is also able to describe experimental data for Ta{sub 2}O{sub 5} films on sapphire with a carbon layer between the film and the substrate by a reduction in the interfacial strength from that obtained for a film without an interfacial carbon layer.

Poisl, W.H.; Fabes, B.D. [Arizona Univ., Tucson, AZ (United States). Dept. of Materials Science and Engineering; Oliver, W.C. [Oak Ridge National Lab., TN (United States)

1993-09-01T23:59:59.000Z

450

Synthesis and characterization of titanium-alloyed hematite thin films for photoelectrochemical water splitting  

SciTech Connect

We have synthesized pure and Ti-alloyed hematite thin films on F doped SnO{sub 2} coated glass substrates by radio frequency magnetron co-sputtering of iron oxide and titanium targets in mixed Ar/O{sub 2} and mixed N{sub 2}/O{sub 2} ambient. We found that the hematite films deposited in the N{sub 2}/O{sub 2} ambient exhibit much poorer crystallinity than the films deposited in the Ar/O{sub 2} ambient. We determined that Ti alloying leads to increased electron carrier concentration and crystallinity, and reduced bandgaps. Moreover, Ti-alloyed hematite thin films exhibited improved photoelectrochemical performance as compared with the pure hematite films: The photocurrents were enhanced and the photocurrent onset shifted to less positive potentials.

Tang Houwen [National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States); University of Denver, Electrical Engineering Department, 2390 S. York Street, Denver, Colorado 80210 (United States); Matin, M. A. [University of Denver, Electrical Engineering Department, 2390 S. York Street, Denver, Colorado 80210 (United States); Wang, Heli; Deutsch, Todd; Al-Jassim, Mowafak; Turner, John; Yan, Yanfa [National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

2011-12-15T23:59:59.000Z

451

Synthesis and Characterization of Titanium-Alloyed Hematite Thin Films for Photoelectrochemical Water Splitting  

SciTech Connect

We have synthesized pure and Ti-alloyed hematite thin films on F doped SnO{sub 2} coated glass substrates by radio frequency magnetron co-sputtering of iron oxide and titanium targets in mixed Ar/O{sub 2} and mixed N{sub 2}/O{sub 2} ambient. We found that the hematite films deposited in the N{sub 2}/O{sub 2} ambient exhibit much poorer crystallinity than the films deposited in the Ar/O{sub 2} ambient. We determined that Ti alloying leads to increased electron carrier concentration and crystallinity, and reduced bandgaps. Moreover, Ti-alloyed hematite thin films exhibited improved photoelectrochemical performance as compared with the pure hematite films: The photocurrents were enhanced and the photocurrent onset shifted to less positive potentials.

Tang, H.; Matin, M. A.; Wang, H.; Deutsch, T.; Al-Jassim, M.; Turner, J.; Yan, Y.

2011-12-15T23:59:59.000Z

452

Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique  

SciTech Connect

In this work, the preparation of In{sub 2}O{sub 3}-ZnO thin films by electron beam evaporation technique on glass substrates is reported. Optical and electrical properties of these films were investigated. The effect of dopant amount and annealing temperature on the optical and electrical properties of In{sub 2}O{sub 3}-ZnO thin films was also studied. Different amount of ZnO was used as dopant and the films were annealed at different temperature. The results showed that the most crystalline, transparent and uniform films with lowest resistivity were obtained using 25 wt% of ZnO annealed at 500 {sup o}C.

Keshavarzi, Reza [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Mirkhani, Valiollah, E-mail: mirkhani@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Moghadam, Majid, E-mail: moghadamm@sci.ui.ac.ir [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of) [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Department of Nanotechnology Engineering, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Tangestaninejad, Shahram; Mohammadpoor-Baltork, Iraj [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Chemistry Department, Catalysis Division, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of); Fallah, Hamid Reza; Dastjerdi, Mohammad Javad Vahid; Modayemzadeh, Hamed Reza [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)] [Department of Physics, University of Isfahan, Isfahan 81746-73441 (Iran, Islamic Republic of)

2011-04-15T23:59:59.000Z

453

Multimonth controlled small molecule release from biodegradable thin films  

Science Journals Connector (OSTI)

...phosphate, pH 7.4. For (chitosan/PGA-TriEG-Diclof) n films, 2 mg/mL chitosan in 100 mM sodium acetate...with a COX fluorescent inhibitor screening assay kit...The films studied, (chitosan/PGA-TriEG-Diclof...activity (i.e., no inhibitor). Total film loadings...

Bryan B. Hsu; Myoung-Hwan Park; Samantha R. Hagerman; Paula T. Hammond

2014-01-01T23:59:59.000Z

454

Classical limit of the Casimir interaction for thin films with applications to graphene  

E-Print Network (OSTI)

The Casimir interaction between two thin material films, between a film and a thick plate and between two films deposited on substrates is considered at large separations (high temperatures) which correspond to the classical limit. It is shown that the free energy of the classical Casimir interaction between two insulating films with no free charge carriers and between an insulating film and a material plate depends on film thicknesses and decreases with separation more rapidly than the classical limit for two thick plates. The free energy of thin films characterized by the metallic-type dielectric permittivity decreases as the second power of separation, i.e., demonstrates the standard classical limit. The obtained results shed light on the possibility to describe dispersion interaction between two graphene sheets and between a graphene sheet and a material plate by modeling graphene as a thin film possessing some dielectric permittivity. It is argued that the most reliable results are obtained by describing the reflection properties on graphene by means of the polarization tensor in (2+1)-dimensional space-time.

G. L. Klimchitskaya; V. M. Mostepanenko

2013-12-23T23:59:59.000Z

455

Single pulse excimer laser nanostructuring of thin silicon films: Nanosharp cones formation and a heat transfer problem  

SciTech Connect

We present analytical and computer modeling along with an experiment on the formation of sharp conical tips on monocrystalline silicon thin films, silicon-on-insulator, subjected to irradiation by single 25 ns pulses from a KrF excimer laser focused into a spot several micrometers in diameter. These fabricated structures have heights of about 1 {mu}m and apical radii of curvature of several tens of nanometers. We offer a simplified analytical model for the formation of these structures. The computer simulation includes two-dimensional time-dependant heat transfer and phase transformations in Si films on SiO{sub 2} substrates that result from the laser irradiation (the Stefan problem). It is shown that upon irradiation and initial melting, the liquid/solid interface remains mainly parallel to the surface of the film. After the laser pulse, the molten material self-cools and resolidifies. The solid/liquid interface moves predominately laterally toward the center of the irradiated spot, forming an almost vertical front. We discuss the relation between the dynamics of the melting/freezing front movement and the displacement of material in the irradiated spot.

Eizenkop, Julia; Avrutsky, Ivan; Auner, Gregory; Georgiev, Daniel G.; Chaudhary, Vipin [Department of Electrical and Computer Engineering, Wayne State University, Detroit, Michigan 48202 (United States); Department of Electrical Engineering and Computer Science, University of Toledo, Toledo, Ohio 43606-3390 (United States); Department of Computer Science and Engineering, The State University of New York, Buffalo, New York 14260 (United States)

2007-05-01T23:59:59.000Z

456

Thin film heterojunction photovoltaic cells and methods of making the same  

DOE Patents (OSTI)

A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250.degree. C. and 500.degree. C. for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.

Basol, Bulent M. (Los Angeles, CA); Tseng, Eric S. (Los Angeles, CA); Rod, Robert L. (Los Angeles, CA)

1983-06-14T23:59:59.000Z

457

Tax Credits Give Thin-Film Solar a Big Boost | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Tax Credits Give Thin-Film Solar a Big Boost Tax Credits Give Thin-Film Solar a Big Boost Tax Credits Give Thin-Film Solar a Big Boost October 18, 2010 - 2:00pm Addthis MiaSolé will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.| Photo courtesy of MiaSolé MiaSolé will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.| Photo courtesy of MiaSolé Lorelei Laird Writer, Energy Empowers What are the key facts? MiaSolé adding more than ten times its current manufacturing capacity Company expects to double or triple its workforce with expansion Expansion is funded by $101 million in Recovery Act tax credit For MiaSolé, a relative newcomer to the solar energy market, 2010 has been

458

Highly photosensitive properties of CdS thin films doped with boron in high doping levels  

Science Journals Connector (OSTI)

We report the photosensitive properties of CdS thin films doped with boron at high doping levels. Boron-doped CdS thin films were successfully prepared through the chemical bath deposition (CBD) method. The photosensitive properties of the boron-doped CdS thin films were significantly affected by the molar ratio of boric acid (H3BO3) to cadmium acetate (CdAc2) (0.001, 0.1, 0.15, and 0.25) and by NH3 concentration (7 and 14 M). As the H3BO3/CdAc2 molar ratio increased, dark sheet resistance rapidly increased, and the boron-doped CdS thin film exhibited the highest room temperature photosensitivity (?1×106 at 0.15–0.25 H3BO3/CdAc2 molar ratio). The photosensitive properties of the boron-doped CdS thin films were much higher than those previously reported in boron-doped CdS systems.

Kiran Kumar Challa; Edoardo Magnone; Eui-Tae Kim

2012-01-01T23:59:59.000Z

459

Electrochromic properties of iron oxide thin films prepared by chemical vapor deposition  

SciTech Connect

Iron oxide thin films were prepared by chemical vapor deposition. The source material was iron (III) acetylacetonate. The Fe{sub 2}O{sub 3} films were produced at a substrate temperature above 200 C. The films deposited at a substrate temperature above 300 C were polycrystalline {beta}-Fe{sub 2}O{sub 3}. Reduction and oxidation of the amorphous films in a 0.3 M LiClO{sub 4} propylene carbonate solution caused desirable changes in optical absorption. Coulometry indicated that the coloration efficiency was 6.0 to 6.5 cm{sup 2}/C.

Maruyama, Toshiro; Kanagawa, Tetsuya [Kyoto Univ. (Japan). Dept. of Chemical Engineering

1996-05-01T23:59:59.000Z

460

Electronic specific heat and magnetic susceptibility in bismuth thin films under three-dimensional quantization  

Science Journals Connector (OSTI)

Three-dimensional quantization of the energy spectrum of electrons or holes can be realized in semimetal bismuth by applying a magnetic field perpendicular to the bismuth thin film. Numerical calculations were made of the energy (of the charge carriers), electronic specific heat, electronic magnetization, and magnetic susceptibility in three-dimensionally quantized bismuth films. The nonparabolic, ellipsoidal electronic band model for bismuth was used and the films were perpendicular to the trigonal axis. The aforementioned thermodynamical quantities were systematically evaluated as functions of temperature, film thickness, and magnetic field intensity.

H. T. Chu and Xiao-di Qi

1989-09-15T23:59:59.000Z

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461

Investigation of the optical properties of MoS{sub 2} thin films using spectroscopic ellipsometry  

SciTech Connect

Spectroscopic ellipsometry (SE) characterization of layered transition metal dichalcogenide (TMD) thin films grown by vapor phase sulfurization is reported. By developing an optical dispersion model, the extinction coefficient and refractive index, as well as the thickness of molybdenum disulfide (MoS{sub 2}) films, were extracted. In addition, the optical band gap was obtained from SE and showed a clear dependence on the MoS{sub 2} film thickness, with thinner films having a larger band gap energy. These results are consistent with theory and observations made on MoS{sub 2} flakes prepared by exfoliation, showing the viability of vapor phase derived TMDs for optical applications.

Yim, Chanyoung; O'Brien, Maria; Winters, Sinéad [School of Chemistry, Trinity College Dublin, Dublin 2 (Ireland); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); McEvoy, Niall [Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); Mirza, Inam; Lunney, James G. [Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); School of Physics, Trinity College Dublin, Dublin 2 (Ireland); Duesberg, Georg S., E-mail: duesberg@tcd.ie [School of Chemistry, Trinity College Dublin, Dublin 2 (Ireland); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); Advanced Materials and BioEngineering Research (AMBER) Centre, Trinity College Dublin, Dublin 2 (Ireland)

2014-03-10T23:59:59.000Z

462

Characterization of sputter deposited thin film scandate cathodes for miniaturized thermionic converter applications  

SciTech Connect

We have successfully developed a method for fabricating scandate-based thermionic emitters in thin film form. The primary goal of our effort is to develop thin film emitters that exhibit low work function, high intrinsic electron emissivity, minimum thermal activation properties and that can be readily incorporated into a microgap converter. Our approach has been to incorporate BaSrO into a Sc{sub 2}O{sub 3} matrix using rf sputtering to produce thin films. Diode testing has shown the resulting films to be electron emissive at temperatures as low as 900 K with current densities of 0.1 mA{center_dot}cm{sup {minus}2} at 1100 K and saturation voltages. We calculate an approximate maximum work function of 1.8 eV and an apparent emission constant (Richardson{close_quote}s constant, A{sup {asterisk}}) of 36 mA{center_dot}cm{sup {minus}2}{center_dot}K{sup {minus}2}. Film compositional and structural analysis shows that a significant surface and subsurface alkaline earth hydroxide phase can form and probably explains the limited utilization and stability of Ba and its surface complexes. The flexibility inherent in sputter deposition suggests alternate strategies for eliminating undesirable phases and optimizing thin film emitter properties. {copyright} {ital 1999 American Institute of Physics.}

Zavadil, K.R.; Ruffner, J.H.; King, D.B. [Sandia National Laboratories, Materials Processing Sciences Center, Albuquerque, New Mexico 87185-0340 (United States)

1999-01-01T23:59:59.000Z

463

Characterization of Sputter Deposited Thin Film Scandate Cathodes for Miniaturized Thermionic Converter Applications  

SciTech Connect

We have successfully developed a method for fabricating scandate-based thermionic emitters in thin film form. The primary goal of our effort is to develop thin film emitters that exhibit low work fimction, high intrinsic electron emissivity, minimum thermal activation properties and that can be readily incorporated into a microgap converter. Our approach has been to incorporate BaSrO into a SqOq matrix using rf sputtering to produce thin films. Diode testing has shown the resulting films to be electron emissive at temperatures as low as 900 K with current densities of 0.1 mA.cm-2 at 1100 K and saturation voltages. We calculate an approximate maximum work function of 1.8 eV and an apparent emission constant (Richardson's constant, A*) of 36 mA.cm-2.K-2. Film compositional and structural analysis shows that a significant surface and subsurface alkaline earth hydroxide phase can form and probably explains the limited utilization and stability of Ba and its surface complexes. The flexibility inherent in sputter deposition suggests alternate strategies for eliminating undesirable phases and optimizing thin film emitter properties.

King, D.B.; Ruffner, J.H.; Zavadil, K.R.

1998-12-14T23:59:59.000Z

464

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films  

SciTech Connect

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

2008-01-01T23:59:59.000Z

465

Titanium and Magnesium Co-Alloyed Hematite Thin Films for Photoelectrochemical Water Splitting  

SciTech Connect

Using a combination of density functional theory calculation and materials synthesis and characterization we examine the properties of charge-compensated Ti and Mg co-alloyed hematite thin films for the application of photoelectrochemical (PEC) water splitting. We find that the charge-compensated co-alloying results in the following effects: (1) It enhances the solubility of Mg and Ti, which leads to reduced electron effective mass and therefore increased electron mobility; (2) It tunes the carrier density and therefore allows the optimization of electrical conductivity; and (3) It reduces the density of charged defects and therefore reduces carrier recombination. As a result, the Ti and Mg co-alloyed hematite thin films exhibit improved water oxidation photocurrent magnitudes as compared to pure hematite thin films. Our results suggest that charge-compensated co-alloying is a plausible approach for engineering hematite for the application of PEC water splitting.

Tang, H.; Yin, W. J.; Matin, M. A.; Wang, H.; Deutsch, T.; Al-Jassim, M. M.; Turner, J. A.; Yan, Y.

2012-04-01T23:59:59.000Z

466

Enhanced Efficiency of Light-Trapping Nanoantenna Arrays for Thin Film Solar Cells  

E-Print Network (OSTI)

We suggest a novel concept of efficient light-trapping structures for thin-film solar cells based on arrays of planar nanoantennas operating far from plasmonic resonances. The operation principle of our structures relies on the excitation of chessboard-like collective modes of the nanoantenna arrays with the field localized between the neighboring metal elements. We demonstrated theoretically substantial enhancement of solar-cell short-circuit current by the designed light-trapping structure in the whole spectrum range of the solar-cell operation compared to conventional structures employing anti-reflecting coating. Our approach provides a general background for a design of different types of efficient broadband light-trapping structures for thin-film solar-cell technologically compatible with large-area thin-film fabrication techniques.

Simovski, Constantin R; Voroshilov, Pavel M; Guzhva, Michael E; Belov, Pavel A; Kivshar, Yuri S

2013-01-01T23:59:59.000Z

467

Adaptation of thin-film photovoltaic technology for use in space  

SciTech Connect

The anticipated deployment of large numbers of satellites in low earth orbit (LEO) for global telecommunications networks renews interest in producing solar power systems that are lightweight, robust, resistant to radiation damage, and relatively inexpensive. Promising near term thin-film candidates are amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). The authors discuss the modifications that are necessary to adapt terrestrial thin-film technology for use in space. The authors characterize expected module performance and present results of tests performed on sample cells. They consider the possibility of achieving aggressive cost, weight, and performance targets through the use of thin-film photovoltaic (PV) technology.

Fairbanks, E.S.; Gates, M.T. [Boeing Commercial Space Co., Seattle, WA (United States)

1997-12-31T23:59:59.000Z

468

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

469

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1996-01-01T23:59:59.000Z

470

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells. 4 figures.

Lauf, R.J.

1994-04-26T23:59:59.000Z

471

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells. 4 figs.

Lauf, R.J.

1996-04-02T23:59:59.000Z

472

Depinning of Atomically Thin Kr Films on Gold  

Science Journals Connector (OSTI)

We have employed the quartz-crystal microbalance technique to measure the sliding friction of krypton films physisorbed on gold. By slowly increasing the amplitude of the substrate oscillations, we have observed a sharp transition from a film locked to the substrate to a sliding one. This transistion is characterized by hysteresis both in dissipation and inertial mass as the amplitude is decreased. Finally, the dependence of this transition on film coverage has been studied in some detail.

L. Bruschi; A. Carlin; G. Mistura

2002-01-14T23:59:59.000Z

473

Photovoltaic effect in transition metal modified polycrystalline BiFeO3 thin films  

Science Journals Connector (OSTI)

We report photovoltaic (PV) effect in multiferroic Bi0.9Sm0.1Fe0.95Co0.05O3 (BSFCO) thin films. Transition metal modified polycrystalline BiFeO3 (BFO) thin films have been deposited on Pt/TiO2/SiO2/Si substrate successfully through pulsed laser deposition (PLD). PV response is observed under illumination both in sandwich and lateral electrode configurations. The open-circuit voltage (Voc) and the short-circuit current density (Jsc) of the films in sandwich electrode configuration under illumination are measured to be 0.9 V and ?0.051 µA cm?2. Additionally, we report piezoresponse for BSFCO films, which confirms ferroelectric piezoelectric behaviour.

Venkata Sreenivas Puli; Dhiren Kumar Pradhan; Rajesh Kumar Katiyar; Indrani Coondoo; Neeraj Panwar; Pankaj Misra; Douglas B Chrisey; J F Scott; Ram S Katiyar

2014-01-01T23:59:59.000Z

474

Structure determination of thin CoFe films by anomalous x-ray diffraction  

SciTech Connect

This work reports on the investigation of structure-property relationships in thin CoFe films grown on MgO. Because of the very similar scattering factors of Fe and Co, it is not possible to distinguish the random A2 (W-type) structure from the ordered B2 (CsCl-type) structure with commonly used x-ray sources. Synchrotron radiation based anomalous x-ray diffraction overcomes this problem. It is shown that as grown thin films and 300 K post annealed films exhibit the A2 structure with a random distribution of Co and Fe. In contrast, films annealed at 400 K adopt the ordered B2 structure.

Gloskovskii, Andrei; Stryganyuk, Gregory; Ouardi, Siham [Institut fuer Anorganische und Analytische Chemie, Johannes Gutenberg-Universitaet, 55099 Mainz (Germany); Fecher, Gerhard H.; Felser, Claudia [Institut fuer Anorganische und Analytische Chemie, Johannes Gutenberg-Universitaet, 55099 Mainz (Germany); Max Planck Institute for Chemical Physics of Solids, D-01187 Dresden (Germany); Hamrle, Jaroslav; Pistora, Jaromir [Department of Physics and Nanotechnology Centre, VSB-Technical University of Ostrava, 70833 Ostrava (Czech Republic); Bosu, Subrojati; Saito, Kesami; Sakuraba, Yuya; Takanashi, Koki [Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577 (Japan)

2012-10-01T23:59:59.000Z

475

Molecular orientation in soft matter thin films studied by resonant soft X-ray reflectivity  

SciTech Connect

We present a technique to study depth profiles of molecular orientation in soft matter thin films with nanometer resolution. The method is based on dichroism in resonant soft X-ray reflectivity using linear s- and p-polarization. It combines the chemical sensitivity of Near-Edge X-ray Absorption Fine Structure spectroscopy to specific molecular bonds and their orientation relative to the polarization of the incident beam with the precise depth profiling capability of X-ray reflectivity. We demonstrate these capabilities on side chain liquid crystalline polymer thin films with soft X-ray reflectivity data at the carbon K edge. Optical constants of the anisotropic refractive index ellipsoid were obtained from a quantitative analysis using the Berreman formalism. For films up to 50 nm thickness we find that the degree of orientation of the long axis exhibits no depth variation and isindependent of the film thickness.

Mezger, Markus; Jerome, Blandine; Kortright, Jeffrey B.; Valvidares, Manuel; Gullikson, Eric; Giglia, Angelo; Mahne, Nicola; Nannarone, Stefano

2011-01-12T23:59:59.000Z

476

Simulation of electrical conduction in thin polycrystalline metallic films: Impact of microstructure  

SciTech Connect

We examine the impact of microstructural features on the electrical conductivity of a thin metallic film using Monte Carlo simulation. In particular, we obtain the dependence of the conductivity (in the absence of surface scattering) on average grain size and electron scattering mechanisms, the latter parametrized by a transmission coefficient, for a model polycrystal generated by a Voronoi tessellation. We find that the conductivity can be described in limiting cases in terms of either a simplified hopping model or a trapping model. Finally, we compare our results with the Mayadas-Shatzkes model of grain-boundary scattering and with experimental resistivity measurements for polycrystalline copper thin films.

Rickman, J. M. [Department of Materials Science and Engineering and Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015 (United States)] [Department of Materials Science and Engineering and Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015 (United States); Barmak, K. [Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 (United States)] [Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 (United States)

2013-10-07T23:59:59.000Z

477

Rapid Deposition Technology Holds the Key for the World's Largest Manufacturer of Thin-Film Solar Modules (Fact Sheet)  

SciTech Connect

First Solar, Inc. has been collaborating with NREL since 1991, advancing its thin-film cadmium telluride solar technology to grow from a startup company to become one of the world's largest manufacturers of solar modules, and the world's largest manufacturer of thin-film solar modules.

Not Available

2013-08-01T23:59:59.000Z

478

CdS quantum dot sensitized nanocrystalline Gd-doped TiO2 thin films for photoelectrochemical solar cells  

Science Journals Connector (OSTI)

CdS quantum dot sensitized Gd-doped TiO2 nanocrystalline thin films have been prepared by chemical method. X-ray diffraction analysis reveals that TiO2 and Gd-doped TiO2...nanocrystalline thin films are of anatas...

A. Ranjitha; N. Muthukumarasamy…

2013-08-01T23:59:59.000Z

479

Deposition of TiO2 thin films by atmospheric plasma post-discharge assisted injection MOCVD  

E-Print Network (OSTI)

Deposition of TiO2 thin films by atmospheric plasma post-discharge assisted injection MOCVD C Keywords : Injection MOCVD, Atmospheric Plasma, titanium oxide, anatase, PECVD Abstract TiO2 thin films combines remote Atmospheric Pressure (AP) Plasma with Pulsed Injection Metallorganic Chemical Vapour

Boyer, Edmond

480

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-film CdTe Caroline R. Corwine,1  

E-Print Network (OSTI)

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-film CdTe Caroline R. Corwine Laboratory, Golden, CO 80401 ABSTRACT Polycrystalline thin-film CdTe is one of the leading materials used various process steps alter defect states in the CdTe layer. Low-temperature photoluminescence (PL

Sites, James R.

Note: This page contains sample records for the topic "thin solid films" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Growth and ferromagnetic resonance of yttrium iron garnet thin films on Yiyan Sun, Young-Yeal Song, and Mingzhong Wu  

E-Print Network (OSTI)

doped TbMnO3 thin films grown by pulsed laser deposition J. Appl. Phys. 112, 033914 (2012) Structural. Phys. Lett. 101, 033910 (2012) Ge2Sb2Te5 phase-change films on polyimide substrates by pulsed laser and two thin cladding layers. The cladding layers were high entropy alloy nitrides (HEAN) and served

482

Dielectric and ferroelectric properties of c-axis oriented strontium bismuth tantalate thin films applied transverse electric fields  

E-Print Network (OSTI)

Dielectric and ferroelectric properties of c-axis oriented strontium bismuth tantalate thin films and ferroelectric properties of c-axis oriented epitaxial strontium bismuth tantalate SBT thin films were American Institute of Physics. DOI: 10.1063/1.2205351 I. INTRODUCTION Strontium bismuth tantalate SBT has

Tonouchi, Masayoshi

483

Small-sized Mach-Zehnder Interferometer Optical Switch Using Thin Film Ge2Sb2Te5 Phase-change Material  

Science Journals Connector (OSTI)

Small-sized Mach-Zehnder Interferometer optical switch using Ge2Sb2Te5 thin films was fabricated. Two thin films of 1-?m-square were sufficient for switching. The switching...

Moriyama, Takumi; Kawashima, Hitoshi; Kuwahara, Masashi; Wang, Xiaomin; Asakura, Hideaki; Tsuda, Hiroyuki

484

Growth of superconducting Hg-1212 very-thin films  

E-Print Network (OSTI)

High quality epitaxial HgBa2CaCu2O6+delta (Hg- High 1212) films with thickness less than 100 nm have been successfully synthesized using cation-exchange process. The films show the superconducting transition up to similar to 118 K which is close...

Wu, Judy; Xie, Y. Y.; Kang, B. W.; Gapud, A. A.; Aytug, T.; Fang, L.

1999-06-01T23:59:59.000Z

485

Tungsten oxide (WO{sub 3}) thin films for application in advanced energy systems  

SciTech Connect

Inherent processes in coal gasification plants produce hazardous hydrogen sulfide (H{sub 2}S), which must be continuously and efficiently detected and removed before the fuel is used for power generation. An attempt has been made in this work to fabricate tungsten oxide (WO{sub 3}) thin films by radio-frequency reactive magnetron-sputter deposition. The impetus being the use of WO{sub 3} films for H{sub 2}S sensors in coal gasification plants. The effect of growth temperature, which is varied in the range of 30-500 deg. C, on the growth and microstructure of WO{sub 3} thin films is investigated. Characterizations made using scanning electron microscopy (SEM) and x-ray diffraction (XRD) indicate that the effect of temperature is significant on the microstructure of WO{sub 3} films. XRD and SEM results indicate that the WO{sub 3} films grown at room temperature are amorphous, whereas films grown at higher temperatures are nanocrystalline. The average grain-size increases with increasing temperature. WO{sub 3} films exhibit smooth morphology at growth temperatures {<=}300 deg. C while relatively rough at >300 deg. C. The analyses indicate that the nanocrystalline WO{sub 3} films grown at 100-300 deg. C could be the potential candidates for H{sub 2}S sensor development for application in coal gasification systems.

Gullapalli, S. K.; Vemuri, R. S.; Manciu, F. S.; Enriquez, J. L.; Ramana, C. V. [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States); Department of Physics, University of Texas at El Paso, El Paso, Texas 79968 (United States); Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)

2010-07-15T23:59:59.000Z

486

Ion beam assisted sputter deposition of ZnO for silicon thin-film solar cells  

Science Journals Connector (OSTI)

Ion beam assisted deposition (IBAD) is a promising technique for improving the material quality of ZnO-based thin films. The operation of an auxiliary Ar+ ion source during deposition of ZnO?:?Ga thin films by dc magnetron sputtering led to an improvement in crystalline texture, especially at low temperatures due to momentum transfer from the ions to the growing film. Etching of IBAD-ZnO?:?Ga films in diluted HCl revealed crater-like surface structures with crater diameters of up to 600 nm. These structures are usually achieved after deposition at high substrate temperatures. This is an indication that the grain structure was remarkably changed by bombarding these films during deposition in terms of increasing the compactness of the ZnO?:?Ga films. Subsequent annealing procedures led to an improvement in the electrical and optical properties. Hydrogenated microcrystalline silicon (µc-Si?:?H) solar cells exhibited enhanced efficiency as compared to cells on other low-temperature sputtered reference ZnO films. This improvement was ascribed to light trapping by the modified etching behaviour of the IBAD-ZnO?:?Ga films as well as improved transparency after the vacuum annealing step.

M Warzecha; D Köhl; M Wuttig; J Hüpkes

2014-01-01T23:59:59.000Z

487

Geometric structures of thin film: Pt on Pd(110) and NiO on Ni(100)  

SciTech Connect

This thesis is divided into 3 papers: dynamical low-energy electron- diffraction investigation of lateral displacements in topmost layer of Pd(110); determination of (1{times}1) and (1{times}2) structures of Pt thin films on Pd(110) by dynamical low-energy electron-diffraction analysis; and structural determination of a NiO(111) film on Ni(100) by dynamical low-energy electron-diffraction analysis.

Warren, O.L.

1993-07-01T23:59:59.000Z

488

Miniature pulsed vacuum arc plasma gun and apparatus for thin-film fabrication  

DOE Patents (OSTI)

A miniature (dime-size in cross-section) vapor vacuum arc plasma gun is described for use in an apparatus to produce thin films. Any conductive material can be layered as a film on virtually any substrate. Because the entire apparatus can easily be contained in a small vacuum chamber, multiple dissimilar layers can be applied without risk of additional contamination. The invention has special applications in semiconductor manufacturing. 8 figs.

Brown, I.G.; MacGill, R.A.; Galvin, J.E.; Ogletree, D.F.; Salmeron, M.

1998-11-24T23:59:59.000Z

489

Miniature pulsed vacuum arc plasma gun and apparatus for thin-film fabrication  

DOE Patents (OSTI)

A miniature (dime-size in cross-section) vapor vacuum arc plasma gun is described for use in an apparatus to produce thin films. Any conductive material can be layered as a film on virtually any substrate. Because the entire apparatus can easily be contained in a small vacuum chamber, multiple dissimilar layers can be applied without risk of additional contamination. The invention has special applications in semiconductor manufacturing.

Brown, Ian G. (Berkeley, CA); MacGill, Robert A. (Richmond, CA); Galvin, James E. (Emmeryville, CA); Ogletree, David F. (El Cerrito, CA); Salmeron, Miquel (El Cerrito, CA)

1998-01-01T23:59:59.000Z

490

Adsorbed films of three-patch colloids: Continuous and discontinuous transitions between thick and thin films  

E-Print Network (OSTI)

We investigate numerically the role of spatial arrangement of the patches on the irreversible adsorption of patchy colloids on a substrate. We consider spherical three-patch colloids and study the dependence of the kinetics on the opening angle between patches. We show that growth is suppressed below and above minimum and maximum opening angles, revealing two absorbing phase transitions between thick and thin film regimes. While the transition at the minimum angle is continuous, in the Directed Percolation class, that at the maximum angle is clearly discontinuous. For intermediate values of the opening angle, a rough colloidal network in the Kardar-Parisi-Zhang universality class grows indefinitely. The nature of the transitions was analyzed in detail by considering bond flexibility, defined as the dispersion of the angle between the bond and the center of the patch. For the range of flexibilities considered we always observe two phase transitions. However, the range of opening angles where growth is sustained increases with flexibility. At a tricritical flexibility, the discontinuous transition becomes continuous. The practical implications of our findings and the relation to other nonequilibrium transitions are discussed.

C. S. Dias; N. A. M. Araújo; M. M. Telo da Gama

2014-05-30T23:59:59.000Z

491

Nanoscale Thin Film Electrolytes for Clean Energy Applications...  

NLE Websites -- All DOE Office Websites (Extended Search)

systems can be used as electrolytes to develop solid oxide fuel cells for clean energy production and to prevent air pollution by developing efficient, reliable oxygen sensors....

492

Channel cracks in atomic-layer and molecular-layer deposited multilayer thin film coatings  

SciTech Connect

Metal oxide thin film coatings produced by atomic layer deposition have been shown to be an effective permeation barrier. The primary failure mode of such coatings under tensile loads is the propagation of channel cracks that penetrate vertically into the coating films. Recently, multi-layer structures that combine the metal oxide material with relatively soft polymeric layers produced by molecular layer deposition have been proposed to create composite thin films with desired properties, including potentially enhanced resistance to fracture. In this paper, we study the effects of layer geometry and material properties on the critical strain for channel crack propagation in the multi-layer composite films. Using finite element simulations and a thin-film fracture mechanics formalism, we show that if the fracture energy of the polymeric layer is lower than that of the metal oxide layer, the channel crack tends to penetrate through the entire composite film, and dividing the metal oxide and polymeric materials into thinner layers leads to a smaller critical strain. However, if the fracture energy of the polymeric material is high so that cracks only run through the metal oxide layers, more layers can result in a larger critical strain. For intermediate fracture energy of the polymer material, we developed a design map that identifies the optimal structure for given fracture energies and thicknesses of the metal oxide and polymeric layers. These results can facilitate the design of mechanically robust permeation barriers, an important component for the development of flexible electronics.

Long, Rong, E-mail: rlongmech@gmail.com [Department of Mechanical Engineering, University of Alberta, Edmonton, Alberta T6G 2G8 (Canada); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Dunn, Martin L. [Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Singapore University of Technology and Design, Singapore 138682 (Singapore)

2014-06-21T23:59:59.000Z

493

Modelling approaches to the dewetting of evaporating thin films of nanoparticle suspensions  

E-Print Network (OSTI)

We review recent experiments on dewetting thin films of evaporating colloidal nanoparticle suspensions (nanofluids) and discuss several theoretical approaches to describe the ongoing processes including coupled transport and phase changes. These approaches range from microscopic discrete stochastic theories to mesoscopic continuous deterministic descriptions. In particular, we describe (i) a microscopic kinetic Monte Carlo model, (ii) a dynamical density functional theory and (iii) a hydrodynamic thin film model. Models (i) and (ii) are employed to discuss the formation of polygonal networks, spinodal and branched structures resulting from the dewetting of an ultrathin 'postcursor film' that remains behind a mesoscopic dewetting front. We highlight, in particular, the presence of a transverse instability in the evaporative dewetting front, which results in highly branched fingering structures. The subtle interplay of decomposition in the film and contact line motion is discussed. Finally, we discuss a simple thin film model (iii) of the hydrodynamics on the mesoscale. We employ coupled evolution equations for the film thickness profile and mean particle concentration. The model is used to discuss the self-pinning and depinning of a contact line related to the 'coffee-stain' effect. In the course of the review we discuss the advantages and limitations of the different theories, as well as possible future developments and extensions.

U. Thiele; I. Vancea; A. J. Archer; M. J. Robbins; L. Frastia; A. Stannard; E. Pauliac-Vaujour; C. P. Martin; M. O. Blunt; P. J. Moriarty

2010-01-15T23:59:59.000Z

494

Thin Film Materials and Processing Techniques for a Next Generation Photovoltaic Device: Cooperative Research and Development Final Report, CRADA Number CRD-12-470  

SciTech Connect

This research extends thin film materials and processes relevant to the development and production of a next generation photovoltaic device.

van Hest, M.

2013-08-01T23:59:59.000Z

495

Guided optical modes in randomly textured ZnO thin films imaged by near-field scanning optical K. Bittkau* and R. Carius  

E-Print Network (OSTI)

relevance. In particular, when designing thin-film solar cells and light emitting diodes LEDs , ran- domly

Peinke, Joachim

496

Low energy muons as probes of thin films and surfaces  

Science Journals Connector (OSTI)

Polarized muons with kinetic energies of a few eV (epithermal ?+...) can be generated by slowing down energetic muons in appropriate moderators consisting of a thin ... on a substrate. The availability of polariz...

E. Morenzoni

1997-07-01T23:59:59.000Z

497

Formation of thin walled ceramic solid oxide fuel cells  

DOE Patents (OSTI)

To reduce thermal stress and improve bonding in a high temperature monolithic solid oxide fuel cell (SOFC), intermediate layers are provided between the SOFC's electrodes and electrolyte which are of different compositions. The intermediate layers are comprised of a blend of some of the materials used in the electrode and electrolyte compositions. Particle size is controlled to reduce problems involving differential shrinkage rates of the various layers when the entire structure is fired at a single temperature, while pore formers are provided in the electrolyte layers to be removed during firing for the formation of desired pores in the electrode layers. Each layer includes a binder in the form of a thermosetting acrylic which during initial processing is cured to provide a self-supporting structure with the ceramic components in the green state. A self-supporting corrugated structure is thus formed prior to firing, which the organic components of the binder and plasticizer removed during firing to provide a high strength, high temperature resistant ceramic structure of low weight and density.

Claar, Terry D. (Tisle, IL); Busch, Donald E. (Hinsdale, IL); Picciolo, John J. (Lockport, IL)

1989-01-01T23:59:59.000Z

498

Method for fabricating thin films of pyrolytic carbon  

DOE Patents (OSTI)

The present invention relates to a method for fabricating ultrathin films of pyrolytic carbon. Pyrolytic carbon is vapor deposited onto a concave surface of a heated substrate to a total uniform thickness in the range of about 0.1 to 1.0 micrometer. The carbon film on the substrate is provided with a layer of adherent polymeric resin. The resulting composite film of pyrolytic carbon and polymeric resin is then easily separated from the substrate by shrinking the 10 polymeric resin coating with thermally induced forces.

Brassell, G.W.; Lewis, J. Jr.; Weber, G.W.

1980-03-13T23:59:59.000Z

499

{ital In situ} studies of morphology, strain, and growth modes of a molecular organic thin film  

SciTech Connect

We use grazing incidence x-ray scattering to study the molecular structure and morphology of thin ({lt}70 ML) crystalline films of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on Au(111) surfaces as a function of film thickness, substrate temperature, and growth rate. Although the first two PTCDA monolayers grow in a layer-by-layer fashion, the film evolution beyond the second monolayer depends strongly upon the growth conditions resulting in low-temperature [i.e., nonequilibrium (NEQ)] and high-temperature [equilibrium (EQ)] growth regimes. In the NEQ regime, the films roughen monotonically with increasing film thickness, but retain a well-defined film thickness. Furthermore, we find that these films have a lattice strain which is independent of film thickness. In the EQ regime, the film acquires a three-dimensional morphology for thicknesses {gt}2 ML, and the lattice strain decreases rapidly with increasing thickness. We also show that the transition between the NEQ and EQ regimes is sharp and depends upon the balance between the growth rate and substrate temperature. These results suggest that the PTCDA/Au(111) system is thermodynamically described by incomplete wetting, and that strain and kinetics play an important role in determining molecular organic film characteristics. {copyright} {ital 1997} {ital The American Physical Society}

Fenter, P. [Princeton Materials Institute and Department of Physics, Princeton University, Princeton, New Jersey 08540 (United States)] [Princeton Materials Institute and Department of Physics, Princeton University, Princeton, New Jersey 08540 (United States); Schreiber, F. [Princeton Materials Institute and Department of Chemistry, Princeton University, Princeton, New Jersey 08540 (United States)] [Princeton Materials Institute and Department of Chemistry, Princeton University, Princeton, New Jersey 08540 (United States); Zhou, L. [Department of Physics, Princeton University, Princeton, New Jersey 08540 (United States)] [Department of Physics, Princeton University, Princeton, New Jersey 08540 (United States); Eisenberger, P. [Princeton Materials Institute, Princeton University, Princeton, New Jersey 08540 (United States)] [Princeton Materials Institute, Princeton University, Princeton, New Jersey 08540 (United States); [Lamont Doherty Labs, Columbia University, New York, New York 10027 (United States); Forrest, S.R. [Princeton Materials Institute, Princeton University, Princeton, New Jersey 08540 (United States)] [Princeton Materials Institute, Princeton University, Princeton, New Jersey 08540 (United States); [Center for Photonic and Optoelectronic Engineering, Princeton University, Princeton, New Jersey 08540 (United States); [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540 (United States)

1997-08-01T23:59:59.000Z

500

Quantitative Determination of Dielectric Thin-Film Properties Using Infrared Emission Spectroscopy  

SciTech Connect

We have completed an experimental study to investigate the use of infrared emission spectroscopy (IRES) for the quantitative analysis of borophosphosilicate glass (BPSG) thin films on silicon monitor wafers. Experimental parameters investigated included temperatures within the range used in the microelectronics industry to produce these films; hence the potential for using the IRES technique for real-time monitoring of the film deposition process has been evaluated. The film properties that were investigated included boron content, phosphorus content, film thickness, and film temperature. The studies were conducted over two temperature ranges, 125 to 225 *C and 300 to 400 *C. The later temperature range includes realistic processing temperatures for the chemical vapor deposition (CVD) of the BPSG films. Partial least squares (PLS) multivariate calibration methods were applied to spectral and film property calibration data. The cross-validated standard errors of prediction (CVSEP) fi-om the PLS analysis of the IRES spectraof21 calibration samples each measured at 6 temperatures in the 300 to 400 "C range were found to be 0.09 wt. `?40 for B, 0.08 wt. `%0 for P, 3.6 ~m for film thickness, and 1.9 *C for temperature. By lowering the spectral resolution fi-om 4 to 32 cm-l and decreasing the number of spectral scans fi-om 128 to 1, we were able to determine that all the film properties could be measured in less than one second to the precision required for the manufacture and quality control of integrated circuits. Thus, real-time in-situ monitoring of BPSG thin films formed by CVD deposition on Si monitor wafers is possible with the methods reported here.

Franke, J.E.; Haaland, D.M.; Niemczyk, T.M.; Zhang, S.

1998-10-14T23:59:59.000Z