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Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network [OSTI]

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

2

A Review of Thin Film Silicon for Solar Cell Applications  

E-Print Network [OSTI]

A Review of Thin Film Silicon for Solar Cell Applications May 99 Contents 1 Introduction 3 2 Low 2.2.3 Deposition onto foreign substrates with the intention of improving crystallographic nature Field Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 11

3

Anti-reflection zinc oxide nanocones for higher efficiency thin-film silicon solar cells  

E-Print Network [OSTI]

Thin film silicon solar cells, which are commonly made from microcrystalline silicon ([mu]c-Si) or amorphous silicon (a-Si), have been considered inexpensive alternatives to thick polycrystalline silicon (polysilicon) solar ...

Mailoa, Jonathan P

2012-01-01T23:59:59.000Z

4

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

Ciszek, T.F.

1995-03-28T23:59:59.000Z

5

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

Ciszek, Theodore F. (Evergreen, CO)

1995-01-01T23:59:59.000Z

6

Enabling Thin Silicon Solar Cell Technology  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

cracking problem in silicon cell technology," says Budiman. "The ALS provides us with a light that allows us to measure and characterize molecular stress in a very quantitative...

7

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network [OSTI]

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell hal-00749873,version1-25Nov shortage until 2010. Research on epitaxial growth for thin film crystalline silicon solar cells has gained

8

Extended light scattering model incorporating coherence for thin-film silicon solar cells  

E-Print Network [OSTI]

Extended light scattering model incorporating coherence for thin-film silicon solar cells Thomas film solar cells. The model integrates coherent light propagation in thin layers with a direct, non potential for light trapping in textured thin film silicon solar cells. VC 2011 American Institute

Lenstra, Arjen K.

9

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers  

SciTech Connect (OSTI)

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Antoniadis, H.

2011-03-01T23:59:59.000Z

10

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network [OSTI]

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell #12;2 1. Introduction: martin.labrune@polytechnique.edu ABSTRACT We report on heterojunction solar cells whose thin intrinsic

11

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell  

E-Print Network [OSTI]

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic­4]. In this context, a basic idea is to periodically texture the metallic back reflector of a thin-film solar cell

12

Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010  

SciTech Connect (OSTI)

In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

Kumar, A.; Ravi, K. V.

2011-06-01T23:59:59.000Z

13

A Review of Thin Film Crystalline Silicon for Solar Cell Applications. Part 1 : Native Substrates.  

E-Print Network [OSTI]

A Review of Thin Film Crystalline Silicon for Solar Cell Applications. Part 1 : Native Substrates. Michelle J. Mc Cann, Kylie R. Catchpole, Klaus J. Weber and Andrew W. Blakers Centre for Sustainable Energy Systems Engineering Department, The Australian National University, ACT 0200, Australia. Email : michelle

14

Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells  

E-Print Network [OSTI]

Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells. de Bariloche, Argentina 3 ECN Solar Energy, High Tech Campus, Building 5, 5656 AE Eindhoven energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar

Dunin-Borkowski, Rafal E.

15

Light Trapping for Thin Silicon Solar Cells by Femtosecond Laser Texturing: Preprint  

SciTech Connect (OSTI)

Femtosecond laser texturing is used to create nano- to micron-scale surface roughness that strongly enhances light-trapping in thin crystalline silicon solar cells. Light trapping is crucial for thin solar cells where a single light-pass through the absorber is insufficient to capture the weakly absorbed red and near-infrared photons, especially with an indirect-gap semiconductor absorber layer such as crystalline Si which is less than 20 um thick. We achieve enhancement of the optical absorption from light-trapping that approaches the Yablonovitch limit.

Lee, B. G.; Lin, Y. T.; Sher, M. J.; Mazur, E.; Branz, H. M.

2012-06-01T23:59:59.000Z

16

Low-cost, deterministic quasi-periodic photonic structures for light trapping in thin film silicon solar cells  

E-Print Network [OSTI]

Light trapping has been an important issue for thin film silicon solar cells because of the low absorption coefficient in the near infrared range. In this paper, we present a photonic structure which combines anodic aluminum ...

Sheng, Xing

17

Enhanced quantum efficiency of amorphous silicon thin film solar cells with the inclusion of a rear-reflector thin film  

SciTech Connect (OSTI)

We investigated the growth mechanism of amorphous silicon thin films by implementing hot-wire chemical vapor deposition and fabricated thin film solar cell devices. The fabricated cells showed efficiencies of 7.5 and 8.6% for the samples without and with the rear-reflector decomposed by sputtering, respectively. The rear-reflector enhances the quantum efficiency in the infrared spectral region from 550 to 750?nm. The more stable quantum efficiency of the sample with the inclusion of a rear-reflector than the sample without the rear-reflector due to the bias effect is related to the enhancement of the short circuit current.

Park, Seungil [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Yong Ji, Hyung; Jun Kim, Myeong; Hyeon Peck, Jong [Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Kim, Keunjoo, E-mail: kimk@chonbuk.ac.kr [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2014-02-17T23:59:59.000Z

18

Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light-scattering substrate  

E-Print Network [OSTI]

Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light://jap.aip.org/about/rights_and_permissions #12;Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light require light-trapping schemes that are predominantly based on depositing the solar cells on rough

Psaltis, Demetri

19

Investigation of porous alumina as a self-assembled diffractive element to facilitate light trapping in thin film silicon solar cells  

E-Print Network [OSTI]

Thin film solar cells are currently being investigated as an affordable alternative energy source because of the reduced material cost. However, these devices suffer from low efficiencies, compared to silicon wafer solar ...

Coronel, Naomi (Naomi Cristina)

2009-01-01T23:59:59.000Z

20

Micrometer-Thin Crystalline-Silicon Solar Cells Integrating Numerically Optimized 2-D Photonic Crystals  

E-Print Network [OSTI]

A 2-D photonic crystal was integrated experimentally into a thin-film crystalline-silicon solar cell of 1-{\\mu}m thickness, after numerical optimization maximizing light absorption in the active material. The photonic crystal boosted the short-circuit current of the cell, but it also damaged its open-circuit voltage and fill factor, which led to an overall decrease in performances. Comparisons between modeled and actual optical behaviors of the cell, and between ideal and actual morphologies, show the global robustness of the nanostructure to experimental deviations, but its particular sensitivity to the conformality of the top coatings and the spread in pattern dimensions, which should not be neglected in the optical model. As for the electrical behavior, the measured internal quantum efficiency shows the strong parasitic absorptions from the transparent conductive oxide and from the back-reflector, as well as the negative impact of the nanopattern on surface passivation. Our exemplifying case, thus, illustr...

Depauw, V; Daif, O El; Gomard, G; Lalouat, L; Drouard, E; Trompoukis, C; Fave, A; Seassal, C; Gordon, I

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing  

E-Print Network [OSTI]

One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

22

Black Silicon Solar Thin-film Microcells Integrating Top Nanocone Structures for Broadband and Omnidirectional Light-Trapping  

E-Print Network [OSTI]

Recently developed classes of monocrystalline silicon solar microcells (u-cell) can be assembled into modules with characteristics (i.e., mechanically flexible forms, compact concentrator designs, and high-voltage outputs) that would be impossible to achieve using conventional, wafer-based approaches. In this paper, we describe a highly dense, uniform and non-periodic nanocone forest structure of black silicon (bSi) created on optically-thin (30 um) u-cells for broadband and omnidirectional light-trapping with a lithography-free and high-throughput plasma texturizing process. With optimized plasma etching conditions and a silicon nitride passivation layer, black silicon u-cells, when embedded in a polymer waveguiding layer, display dramatic increases of as much as 65.7% in short circuit current, as compared to a bare silicon device. The conversion efficiency increases from 8% to 11.5% with a small drop in open circuit voltage and fill factor.

Xu, Zhida; Brueckner, Eric P; Li, Lanfang; Jiang, Jing; Nuzzo, Ralph G; Liu, Gang L

2014-01-01T23:59:59.000Z

23

Development of Commercial Technology for Thin Film Silicon Solar Cells on Glass: Cooperative Research and Development Final Report, CRADA Number CRD-07-209  

SciTech Connect (OSTI)

NREL has conducted basic research relating to high efficiency, low cost, thin film silicon solar cell design and the method of making solar cells. Two patents have been issued to NREL in the above field. In addition, specific process and metrology tools have been developed by NREL. Applied Optical Sciences Corp. (AOS) has expertise in the manufacture of solar cells and has developed its own unique concentrator technology. AOS wants to complement its solar cell expertise and its concentrator technology by manufacturing flat panel thin film silicon solar cell panels. AOS wants to take NREL's research to the next level, using it to develop commercially viable flat pane, thin film silicon solar cell panels. Such a development in equipment, process, and metrology will likely produce the lowest cost solar cell technology for both commercial and residential use. NREL's fundamental research capability and AOS's technology and industrial background are complementary to achieve this product development.

Sopori, B.

2013-03-01T23:59:59.000Z

24

Experimental Demonstration of Quasi-Resonant Absorption in Silicon Thin Films for Enhanced Solar Light Trapping  

E-Print Network [OSTI]

We experimentally demonstrate that the addition of partial lattice disorder to a thin-film micro-crystalline silicon photonic crystal results in the controlled spectral broadening of its absorption peaks to form quasi resonances; increasing light trapping over a wide bandwidth while also reducing sensitivity to the angle of incident radiation. Accurate computational simulations are used to design the active-layer photonic crystal so as to maximize the number of its absorption resonances over the broadband interval where micro-crystalline silicon is weakly absorbing before lattice disorder augmented with fabrication-induced imperfections are applied to further boost performance. Such a design strategy may find practical use for increasing the efficiency of thin-film silicon photovoltaics.

Oskooi, Ardavan; Ishizaki, Kenji; Noda, Susumu

2013-01-01T23:59:59.000Z

25

Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars  

E-Print Network [OSTI]

Monocrystalline silicon solar cells, polycrystalline silicon solar cells, and amorphous silicon (thin-film) solar

Tu, Bor-An Clayton

2013-01-01T23:59:59.000Z

26

Modeling and control of thin film surface morphology: application to thin film solar cells  

E-Print Network [OSTI]

of a p-i-n thin-film solar cell with front transparent con-for thin-film a-si:h solar cells. Progress in Photovoltaics,in thin-film silicon solar cells. Optics Communications,

Huang, Jianqiao

2012-01-01T23:59:59.000Z

27

Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013  

SciTech Connect (OSTI)

Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

Ravi, T. S.

2013-05-01T23:59:59.000Z

28

Electrochemical thinning of silicon  

DOE Patents [OSTI]

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

Medernach, John W. (Albuquerque, NM)

1994-01-01T23:59:59.000Z

29

Electrochemical thinning of silicon  

DOE Patents [OSTI]

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

Medernach, J.W.

1994-01-11T23:59:59.000Z

30

Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations  

SciTech Connect (OSTI)

Thin-film solar cells based on silicon have emerged as an alternative to standard thick wafers technology, but they are less efficient, because of incomplete absorption of sunlight, and non-radiative recombinations. In this paper, we focus on the case of crystalline silicon (c-Si) devices, and we present a full analytic electro-optical model for p-n junction solar cells with Lambertian light trapping. This model is validated against numerical solutions of the drift-diffusion equations. We use this model to investigate the interplay between light trapping, and bulk and surface recombination. Special attention is paid to surface recombination processes, which become more important in thinner devices. These effects are further amplified due to the textures required for light trapping, which lead to increased surface area. We show that c-Si solar cells with thickness of a few microns can overcome 20% efficiency and outperform bulk ones when light trapping is implemented. The optimal device thickness in presence of light trapping, bulk and surface recombination, is quantified to be in the range of 1080??m, depending on the bulk quality. These results hold, provided the effective surface recombination is kept below a critical level of the order of 100?cm/s. We discuss the possibility of meeting this requirement, in the context of state-of-the-art techniques for light trapping and surface passivation. We show that our predictions are within the capability of present day silicon technologies.

Bozzola, A., E-mail: angelo.bozzola@unipv.it; Kowalczewski, P.; Andreani, L. C. [Physics Department, University of Pavia and CNISM, via Bassi 6, I-27100 Pavia (Italy)

2014-03-07T23:59:59.000Z

31

Angular behavior of the absorption limit in thin film silicon solar cells  

E-Print Network [OSTI]

We investigate the angular behavior of the upper bound of absorption provided by the guided modes in thin film solar cells. We show that the 4n^2 limit can be potentially exceeded in a wide angular and wavelength range using two-dimensional periodic thin film structures. Two models are used to estimate the absorption enhancement; in the first one, we apply the periodicity condition along the thickness of the thin film structure but in the second one, we consider imperfect confinement of the wave to the device. To extract the guided modes, we use an automatized procedure which is established in this work. Through examples, we show that from the optical point of view, thin film structures have a high potential to be improved by changing their shape. Also, we discuss the nature of different optical resonances which can be potentially used to enhance light trapping in the solar cell. We investigate the two different polarization directions for one-dimensional gratings and we show that the transverse magnetic pola...

Naqavi, Ali; Sderstrm, Karin; Battaglia, Corsin; Paeder, Vincent; Scharf, Toralf; Herzig, Hans Peter; Ballif, Christophe

2013-01-01T23:59:59.000Z

32

Development of Thin Film Silicon Solar Cell Using Inkjet Printed Silicon and Other Inkjet Processes: Cooperative Research and Development Final Report, CRADA Number CRD-07-260  

SciTech Connect (OSTI)

The cost of silicon photovoltaics (Si-PV) can be greatly lowered by developing thin-film crystalline Si solar cells on glass or an equally lower cost substrate. Typically, Si film is deposited by thermal evaporation, plasma enhanced chemical vapor deposition, and sputtering. NREL and Silexos have worked under a CRADA to develop technology to make very low cost solar cells using liquid organic precursors. Typically, cyclopentasilane (CPS) is deposited on a glass substrate and then converted into an a-Si film by UV polymerization followed by low-temperature optical process that crystallizes the amorphous layer. This technique promises to be a very low cost approach for making a Si film.

Sopori, B.

2012-04-01T23:59:59.000Z

33

Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars  

E-Print Network [OSTI]

Monocrystalline silicon solar cells, polycrystalline silicon solar cells, and amorphous silicon (thin-film)

Tu, Bor-An Clayton

2013-01-01T23:59:59.000Z

34

amorphous-nanocrystalline silicon thin: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for manufacturing high...

35

Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices  

SciTech Connect (OSTI)

SiOnyx has developed an enhanced thin film silicon photovoltaic device with improved efficiency. Thin film silicon solar cells suffer from low material absorption characteristics resulting in poor cell efficiencies. SiOnyxs approach leverages Black Silicon, an advanced material fabricated using ultrafast lasers. The laser treated films show dramatic enhancement in optical absorption with measured values in excess of 90% in the visible spectrum and well over 50% in the near infrared spectrum. Thin film Black Silicon solar cells demonstrate 25% higher current generation with almost no impact on open circuit voltage as compared with representative control samples. The initial prototypes demonstrated an improvement of nearly 2 percentage points in the suns Voc efficiency measurement. In addition we validated the capability to scale this processing technology to the throughputs (< 5 min/m2) required for volume production using state of the art commercially available high power industrial lasers. With these results we clearly demonstrate feasibility for the enhancement of thin film solar cells with this laser processing technique.

Martin U. Pralle; James E. Carey

2010-07-31T23:59:59.000Z

36

Thin film solar cells using impure polycrystalline silicon M. Rodot (1), M. Barbe (1), J. E. Bouree (1), V. Perraki (*) (1), G. Revel (2),R. Kishore (2) (**), J. L. Pastol (2), R. Mertens (3), M. Caymax (3) and M. Eyckmans  

E-Print Network [OSTI]

687 Thin film solar cells using impure polycrystalline silicon M. Rodot (1), M. Barbe (1), J. E avec les autres aptes à l'utilisation de Si-UMG bon marché. Abstract. 2014 Epitaxial solar cells have and electron diffusion length adequate to produce good solar cells. 10.3 % efficiency cells have been obtained

Paris-Sud XI, Université de

37

Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint  

SciTech Connect (OSTI)

Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so -- polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.

Goodrich, A.; Woodhouse, M.; Hacke, P.

2012-06-01T23:59:59.000Z

38

Performance of Ultrathin Silicon Solar Microcells with Nanostructures of Relief  

E-Print Network [OSTI]

of the materials. Solar cells based on thin films of amorphous or polycrystalline silicon require sub- stantially, Urbana, Illinois 61801 ABSTRACT Recently developed classes of monocrystalline silicon solar microcells systems that benefit from thin construction and efficient materials utilization. KEYWORDS Nanoimprint

Rogers, John A.

39

High efficiency low cost thin film silicon solar cell design and method for making  

DOE Patents [OSTI]

A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

Sopori, Bhushan L. (Denver, CO)

1999-01-01T23:59:59.000Z

40

High efficiency low cost thin film silicon solar cell design and method for making  

DOE Patents [OSTI]

A semiconductor device is described having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer. 9 figs.

Sopori, B.L.

1999-04-27T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

High efficiency, low cost, thin film silicon solar cell design and method for making  

DOE Patents [OSTI]

A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

Sopori, Bhushan L. (Denver, CO)

2001-01-01T23:59:59.000Z

42

Silicon point contact concentrator solar cells  

SciTech Connect (OSTI)

Experimental results are presented for thin high resistivity concentrator silicon solar cells which use a back-side point-contact geometry. Cells of 130 and 233 micron thickness were fabricated and characterized. The thin cells were found to have efficiencies greater than 22 percent for incident solar intensities of 3 to 30 W/sq cm. Efficiency peaked at 23 percent at 11 W/sq cm measured at 22-25 C. Strategies for obtaining higher efficiencies with this solar cell design are discussed. 8 references.

Sinton, R.A.; Kwark, Y.; Swirhun, S.; Swanson, R.M.

1985-08-01T23:59:59.000Z

43

A survey of thin-film solar photovoltaic industry & technologies  

E-Print Network [OSTI]

A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

Grama, Sorin

2007-01-01T23:59:59.000Z

44

Multi-resonant silver nano-disk patterned thin film hydrogenated amorphous silicon solar cells for Staebler-Wronski effect compensation  

E-Print Network [OSTI]

We study polarization independent improved light trapping in commercial thin film hydrogenated amorphous silicon (a-Si:H) solar photovoltaic cells using a three-dimensional silver array of multi-resonant nano-disk structures embedded in a silicon nitride anti-reflection coating (ARC) to enhance optical absorption in the intrinsic layer (i-a-Si:H) for the visible spectrum for any polarization angle. Predicted total optical enhancement (OE) in absorption in the i-a-Si:H for AM-1.5 solar spectrum is 18.51% as compared to the reference, and producing a 19.65% improvement in short-circuit current density (JSC) over 11.7 mA/cm2 for a reference cell. The JSC in the nano-disk patterned solar cell (NDPSC) was found to be higher than the commercial reference structure for any incident angle. The NDPSC has a multi-resonant optical response for the visible spectrum and the associated mechanism for OE in i-a-Si:H layer is excitation of Fabry-Perot resonance facilitated by surface plasmon resonances. The detrimental Staebl...

Vora, Ankit; Pearce, Joshua M; Bergstrom, Paul L; Gney, Durdu

2014-01-01T23:59:59.000Z

45

Silicon Solar Cell Light-Trapping Using Defect Mode Photonic Kelsey A. Whitesell*a  

E-Print Network [OSTI]

Silicon Solar Cell Light-Trapping Using Defect Mode Photonic Crystals Kelsey A. Whitesell to enhance performance of thin film solar cells because of their unique ability to control light. We show for light trapping in thin film photovoltaics. Keywords: photonic crystals, defect, silicon, solar cell

Atwater, Harry

46

Light harvesting by planar photonic crystal in solar cells: The case of amorphous silicon  

E-Print Network [OSTI]

Light harvesting by planar photonic crystal in solar cells: The case of amorphous silicon Guillaume on light management in silicon thin film solar cells, using photonic crystals (PhC) structures. We by means of optical simulations performed on realistic thin film solar cell stacks. Theoretically

Boyer, Edmond

47

Recent technological advances in thin film solar cells  

SciTech Connect (OSTI)

High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

Ullal, H.S.; Zwelbel, K.; Surek, T.

1990-03-01T23:59:59.000Z

48

Compensated amorphous silicon solar cell  

DOE Patents [OSTI]

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

Devaud, Genevieve (629 S. Humphrey Ave., Oak Park, IL 60304)

1983-01-01T23:59:59.000Z

49

Design and fabrication of photonic crystals in epitaxial free silicon for ultrathin solar cells  

E-Print Network [OSTI]

Design and fabrication of photonic crystals in epitaxial free silicon for ultrathin solar cells photovoltaic solar cell. Optical simulations performed on a complete solar cell revealed that patterning to obtain ultrathin patterned solar cells. Keywords: Photonic crystals; Epitaxial crystalline silicon; Thin

Paris-Sud XI, Université de

50

Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell  

E-Print Network [OSTI]

We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

Li, Tong; Jiang, Chun

2010-01-01T23:59:59.000Z

51

Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova*  

E-Print Network [OSTI]

1 Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova* , I be minimized throughout the fabrication process. Amorphous silicon thin-film transistors and solar cells, thin-film transistor, solar cell, flexible electronics Phone: (609) 258-4626, Fax: (609) 258-3585, E

52

Plasmonic enhancement of thin-film solar cells using gold-black C.J. Fredricksena  

E-Print Network [OSTI]

Plasmonic enhancement of thin-film solar cells using gold-black coatings C.J. Fredricksena , D. R thin-film amorphous-silicon solar cells enhance the short-circuit current by 20% over a broad spectrum and locally enhance the field strength. Keywords: plasmonics, thin-film, solar cell, metallic nanoparticles

Peale, Robert E.

53

Method for processing silicon solar cells  

DOE Patents [OSTI]

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

1997-05-06T23:59:59.000Z

54

Method for processing silicon solar cells  

DOE Patents [OSTI]

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

Tsuo, Y. Simon (Golden, CO); Landry, Marc D. (Lafayette, CO); Pitts, John R. (Lakewood, CO)

1997-01-01T23:59:59.000Z

55

Laser wafering for silicon solar.  

SciTech Connect (OSTI)

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01T23:59:59.000Z

56

Amorphous silicon passivated contacts for diffused junction silicon solar cells  

SciTech Connect (OSTI)

Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopyenergy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

Bullock, J., E-mail: james.bullock@anu.edu.au; Yan, D.; Wan, Y.; Cuevas, A. [Research School of Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Demaurex, B.; Hessler-Wyser, A.; De Wolf, S. [cole Polytechnique Fdrale de Lausanne (EPFL), Institute of micro engineering (IMT), Photovoltaics and Thin Film Electronic Laboratory, Maladire 71, CH-200 Neuchtel (Switzerland)

2014-04-28T23:59:59.000Z

57

Amorphous silicon/crystalline silicon heterojunctions: The future of high-efficiency silicon solar cells  

E-Print Network [OSTI]

;5 Record efficiencies #12;6 Diffused-junction solar cells Diffused-junction solar cell Chemical passivation to ~650 mV #12;7 Silicon heterojunction solar cells a-Si:H provides excellent passivation of c-Si surface Heterojunction solar cell Chemical passivation Chemical passivation #12;8 Voc and silicon heterojunction solar

Firestone, Jeremy

58

Engineering Metal Impurities in Multicrystalline Silicon Solar...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

from inexpensive low-grade silicon. Artist's impression of an intense beam of synchrotron light striking a solar cell and the resulting fluorescence image of the distribution of...

59

amorphous silicon thin: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

values previously Hellman, Frances 6 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

60

Advanced crystallization techniques of ''solar grade'' silicon  

SciTech Connect (OSTI)

Microstructural, electrical and photovoltaic characteristics of polycristalline silicon solar cells fabricated with silicon ingots containing 5, 100 and 500 ppmw iron are reported and discussed. All silicon ingots were grown by the directional solidification technique in graphite or special quartz molds and doped intentionally with iron, in order to evaluate the potentiality of the D.S. technique when employed with solar silicon feedstocks. Results indicate that structural breakdown limits the amount of the ingot which is usable for solar cells fabrication, but also that efficiencies in excess of 10% are obtained using the ''good'' region of the ingot.

Gasparini, M.; Alessandri, M.; Calligarich, C.; Pizzini, S.; Rava, P.; Redaelli, F.; Sardi, L.

1982-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Thin film solar energy collector  

DOE Patents [OSTI]

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

1983-11-22T23:59:59.000Z

62

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a  

E-Print Network [OSTI]

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a J. D. Servaites thin-film solar cell types: hydrogenated amorphous silicon a-Si:H p-i-n cells, organic bulk understanding of thin film solar cell device physics, including important module performance variability issues

Alam, Muhammad A.

63

Flexible Solar-Energy Harvesting System on Plastic with Thin-film LC Oscillators Operating Above ft for  

E-Print Network [OSTI]

Flexible Solar-Energy Harvesting System on Plastic with Thin-film LC Oscillators Operating Above ft- This paper presents an energy-harvesting system consisting of amorphous-silicon (a-Si) solar cells and thin of the energy-harvesting system. The solar module consists of solar cells in series operating at an output

64

ULTRA-LIGHTWEIGHT AMORPHOUS SILICON SOLAR CELLS DEPOSITED OIN 7.5pn-1 THICK STAINLESS STEEL SUBSTRATES  

E-Print Network [OSTI]

ULTRA-LIGHTWEIGHT AMORPHOUS SILICON SOLAR CELLS DEPOSITED OIN 7.5pn-1 THICK STAINLESS STEEL specific power for space application, we deposited a-Si thin film solar cells on ultra-thin stainless steel-thin stainless steel (SS) substrates (down to 7.5 pm) for space power applications. In this paper, we report our

Deng, Xunming

65

Fabricating solar cells with silicon nanoparticles  

DOE Patents [OSTI]

A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

2014-09-02T23:59:59.000Z

66

Integrated photonic structures for light trapping in thin-film Si solar cells  

E-Print Network [OSTI]

We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

Sheng, Xing

67

Texturization of multicrystalline silicon solar cells  

E-Print Network [OSTI]

A significant efficiency gain for crystalline silicon solar cells can be achieved by surface texturization. This research was directed at developing a low-cost, high-throughput and reliable texturing method that can create ...

Li, Dai-Yin

2010-01-01T23:59:59.000Z

68

amorphous silicon solar: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 26 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

69

Arrays of ultrathin silicon solar microcells  

DOE Patents [OSTI]

Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

Rogers, John A; Rockett, Angus A; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

2014-03-25T23:59:59.000Z

70

Manufacture of silicon carbide using solar energy  

DOE Patents [OSTI]

A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

Glatzmaier, Gregory C. (Boulder, CO)

1992-01-01T23:59:59.000Z

71

Compensated amorphous-silicon solar cell  

DOE Patents [OSTI]

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

Devaud, G.

1982-06-21T23:59:59.000Z

72

Three dimensional amorphous silicon/microcrystalline silicon solar cells  

DOE Patents [OSTI]

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

Kaschmitter, J.L.

1996-07-23T23:59:59.000Z

73

Three dimensional amorphous silicon/microcrystalline silicon solar cells  

DOE Patents [OSTI]

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

Kaschmitter, James L. (Pleasanton, CA)

1996-01-01T23:59:59.000Z

74

Deng & Schiff, Amorphous Silicon Based Solar Cells rev. 7/30/2002, Page 1 Amorphous Silicon Based Solar Cells  

E-Print Network [OSTI]

Deng & Schiff, Amorphous Silicon Based Solar Cells rev. 7/30/2002, Page 1 Amorphous Silicon Based Solar Cells Xunming Deng and Eric A. Schiff Table of Contents 1 Overview 3 1.1 Amorphous Silicon: The First Bipolar Amorphous Semiconductor 3 1.2 Designs for Amorphous Silicon Solar Cells: A Guided Tour 6

Deng, Xunming

75

Dual gratings for enhanced light trapping in thin-film solar cells  

E-Print Network [OSTI]

, Ireland * christian.schuster@york.ac.uk Abstract: Thin film solar cells benefit significantly from; (350.6050) Solar energy. References and links 1. M. A. Green, J. Zhao, A. Wang, and S. R. Wenham, "Progress and outlook for high-efficiency crystalline silicon solar cells," Sol. Energy Mater. Sol. Cells 65

76

High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells  

E-Print Network [OSTI]

. Figure 3-1 IV curve of a UT fabricated triple cell, showing 12.7% initial, active-area efficiency. Figure1 High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells PHASE I Annual-junction a-Si Solar Cells with Heavily Doped Thin Interface Layers at the Tunnel Junctions Section 4 High

Deng, Xunming

77

California: TetraCell Silicon Solar Cell Improves Efficiency...  

Energy Savers [EERE]

California: TetraCell Silicon Solar Cell Improves Efficiency, Wins R&D 100 Award California: TetraCell Silicon Solar Cell Improves Efficiency, Wins R&D 100 Award August 16, 2013 -...

78

Coating for Silicon Solar Cell by Using Silvaco Software  

E-Print Network [OSTI]

efficiency of SiO 2/Si3N 4silicon solar cell. The solar cell structure was modelled by using Silvaco software

A. Lennie; H. Abdullah; Z. M. Shila; M. A. Hannan

79

GCL Solar Energy Technology Holdings formerly GCL Silicon aka...  

Open Energy Info (EERE)

GCL Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu Zhongneng Polysilicon Jump to: navigation, search Name: GCL Solar Energy Technology Holdings (formerly GCL...

80

CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS  

E-Print Network [OSTI]

CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS by David T. Oliphant. Woolley Dean, College of Physical and Mathematical Sciences #12;ABSTRACT CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS David T. Oliphant Department of Physics and Astronomy

Hart, Gus

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Thin Silicon MEMS Contact-Stress Sensor  

SciTech Connect (OSTI)

This work offers the first, thin, MEMS contact-stress (CS) sensor capable of accurate in situ measruement of time-varying, contact-stress between two solid interfaces (e.g. in vivo cartilage contact-stress and body armor dynamic loading). This CS sensor is a silicon-based device with a load sensitive diaphragm. The diaphragm is doped to create piezoresistors arranged in a full Wheatstone bridge. The sensor is similar in performance to established silicon pressure sensors, but it is reliably produced to a thickness of 65 {micro}m. Unlike commercial devices or other research efforts, this CS sensor, including packaging, is extremely thin (< 150 {micro}m fully packaged) so that it can be unobtrusively placed between contacting structures. It is built from elastic, well-characterized materials, providing accurate and high-speed (50+ kHz) measurements over a potential embedded lifetime of decades. This work explored sensor designs for an interface load range of 0-2 MPa; however, the CS sensor has a flexible design architecture to measure a wide variety of interface load ranges.

Kotovsky, J; Tooker, A; Horsley, D A

2009-12-07T23:59:59.000Z

82

amorphous silicon thin-film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

amorphous silicon Kanicki, Jerzy 17 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

83

Metal electrode for amorphous silicon solar cells  

DOE Patents [OSTI]

An amorphous silicon solar cell having an N-type region wherein the contact to the N-type region is composed of a material having a work function of about 3.7 electron volts or less. Suitable materials include strontium, barium and magnesium and rare earth metals such as gadolinium and yttrium.

Williams, Richard (Princeton, NJ)

1983-01-01T23:59:59.000Z

84

Development efforts on silicon solar cells  

SciTech Connect (OSTI)

This report presents a summary of the major results from the silicon high-concentration solar cell program at Stanford University from the period 1983--1990. Following a detailed design study, efforts were focused upon experimental verification of the modeled results that predicted 28% efficiencies for a new 500X concentrator solar cell design. A history of the research progress is given detailing the critical experiments that enabled the demonstration of 19.6% cells in 1983, then subsequent improvements culminating in efficiencies over 28% by 1987. In addition to laboratory efficiency improvements, the report details advances in the understanding of the fundamental device physics and modeling of silicon solar cell operation. The latter stages of the program included the development of module-ready cells in large quantity for the EPRI prototype 500X concentrator modules. Several of these 48-cell modules are currently in the field under test.

Sinton, R.A.; Swanson, R.M. (Stanford Univ., CA (United States))

1992-02-01T23:59:59.000Z

85

Enhanced efficiency of thin film solar cells using a shifted dual grating plasmonic structure  

E-Print Network [OSTI]

.5403) Plasmonics; (310.2790) Guided waves. References and links 1. O. Morton, "Solar energy: A new day dawning Society of America OCIS codes: (350.6050) Solar energy; (050.2770) Gratings; (310.0310) Thin films; (250? Silicon valley sunrise," Nature 443(7107), 1922 (2006). 2. M. A. Green and S. Pillai, "Harnessing

Levy, Uriel

86

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES  

E-Print Network [OSTI]

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES S. Suresh1 , T.-G. Nieh2 and B.W. Choi2: Mechanical properties; Nano-indentation; Thin films; Copper; Dislocations Introduction Indentation methods films on substrates (e.g., [2,3]) using instrumented indentation. Nano-indentation studies of thin films

Suresh, Subra

87

Efficiency of silicon solar cells containing chromium  

DOE Patents [OSTI]

Efficiency of silicon solar cells containing about 10.sup.15 atoms/cm.sup.3 of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200.degree. C. to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon material.

Frosch, Robert A. Administrator of the National Aeronautics and Space (New Port Beach, CA); Salama, Amal M. (New Port Beach, CA)

1982-01-01T23:59:59.000Z

88

Origami-enabled deformable silicon solar cells  

SciTech Connect (OSTI)

Deformable electronics have found various applications and elastomeric materials have been widely used to reach flexibility and stretchability. In this Letter, we report an alternative approach to enable deformability through origami. In this approach, the deformability is achieved through folding and unfolding at the creases while the functional devices do not experience strain. We have demonstrated an example of origami-enabled silicon solar cells and showed that this solar cell can reach up to 644% areal compactness while maintaining reasonable good performance upon cyclic folding/unfolding. This approach opens an alternative direction of producing flexible, stretchable, and deformable electronics.

Tang, Rui; Huang, Hai; Liang, Hanshuang; Liang, Mengbing [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Tu, Hongen; Xu, Yong [Electrical and Computer Engineering, Wayne State University, 5050 Anthony Wayne Dr., Detroit, Michigan 48202 (United States); Song, Zeming; Jiang, Hanqing, E-mail: hanqing.jiang@asu.edu [School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States); Yu, Hongyu, E-mail: hongyu.yu@asu.edu [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); School of Earth and Space Exploration, Arizona State University, Tempe, Arizona 85287 (United States)

2014-02-24T23:59:59.000Z

89

Investigating the efficiency of Silicon Solar cells at  

E-Print Network [OSTI]

Investigating the efficiency of Silicon Solar cells at different temperatures and wavelengths to study the characteristics of silicon photovoltaic cells (solar cells). We vary the wavelength of light as well as the temperature of the solar cell to investigate how the open voltage across the cell varies

Attari, Shahzeen Z.

90

Polycrystalline thin-film solar cells and modules  

SciTech Connect (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

91

Polycrystalline thin-film solar cells and modules  

SciTech Connect (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

92

Integrated All-silicon Thin-film Power Electronics on Flexible Sheets For Ubiquitous Wireless Charging Stations based on Solar-energy Harvesting  

E-Print Network [OSTI]

the power inverter circuit. To generate an AC output current, the two solar modules (S1/2) are used to provide embedded power inversion, harvester control, and power amplification. This converts DC outputs from the solar modules to AC power for wireless device charging through patterned capacitive antennas

93

And the Award Goes to... Silicon Ink Solar Technology Supported...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

screen printing process, this silicon ink technology offers a novel path to producing solar cells with higher conversion efficiencies at lower cost. A pair of presenters...

94

And the Award Goes to... Silicon Ink Solar Technology Supported...  

Energy Savers [EERE]

program continues to see from investing in collaborative efforts with solar start-ups that take full advantage of the NREL's expertise and facilities. Innovalight's silicon...

95

High temperature investigations of crystalline silicon solar cell materials  

E-Print Network [OSTI]

Crystalline silicon solar cells are a promising candidate to provide a sustainable, clean energy source for the future. In order to bring about widespread adoption of solar cells, much work is needed to reduce their cost. ...

Hudelson, George David Stephen, III

2009-01-01T23:59:59.000Z

96

27. 5-percent silicon concentrator solar cells  

SciTech Connect (OSTI)

Recent advances in silicon solar cells using the backside point-contact configuration have been extended resulting in 27.5-percent efficiencies at 10 W/sq cm (100 suns, 24 C), making these the most efficient solar cells reported to date. The one-sun efficiencies under an AM1.5 spectrum normalized to 100 mW/sq cm are 22 percent at 24 C based on the design area of the concentrator cell. The improvements reported here are largely due to the incorportation of optical light trapping to enhance the absorption of weakly absorbed near bandgap light. These results approach the projected efficiencies for a mature technology which are 23-24 percent at one sun and 29 percent in the 100-350-sun (10-35 W/sq cm) range. 10 references.

Sinton, R.A.; Kwark, Y.; Gan, J.Y.; Swanson, R.M.

1986-10-01T23:59:59.000Z

97

Hybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong,  

E-Print Network [OSTI]

alternative energy solution. KEYWORDS: Nanotexture, solar cell, heterojunction, conductive polymer, light solar cell.1 Conventional Si solar cells have p-n junctions inside for an efficient extraction of lightHybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong, Erik C. Garnett, Shuang Wang, Zongfu Yu

Cui, Yi

98

Metal catalyst technique for texturing silicon solar cells  

DOE Patents [OSTI]

Textured silicon solar cells and techniques for their manufacture utilizing metal sources to catalyze formation of randomly distributed surface features such as nanoscale pyramidal and columnar structures. These structures include dimensions smaller than the wavelength of incident light, thereby resulting in a highly effective anti-reflective surface. According to the invention, metal sources present in a reactive ion etching chamber permit impurities (e.g. metal particles) to be introduced into a reactive ion etch plasma resulting in deposition of micro-masks on the surface of a substrate to be etched. Separate embodiments are disclosed including one in which the metal source includes one or more metal-coated substrates strategically positioned relative to the surface to be textured, and another in which the walls of the reaction chamber are pre-conditioned with a thin coating of metal catalyst material.

Ruby, Douglas S. (Albuquerque, NM); Zaidi, Saleem H. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

99

Electrical overstress failure in silicon solar cells  

SciTech Connect (OSTI)

A solar-cell electrical-overstress-failure model and the results of experimental measurements of threshold pulsed failure currents on four types of silicon solar cells are presented. The transient EMP field surrounding a lightning stroke has been identified as a potential threat to a photovoltaic array, yet failure analysis of solar cells in a pulsed environment had not previously been reported. Failure in the low-resistivity concentrator cells at pulse widths between 1 ..mu..s and 1 ms occurred initially in the junction. Finger damage in the form of silver melting occurs at currents only slightly greater than that required for junction damage. The result of reverse-bias transient-overstress tests on high-resistivity (10 ..cap omega..cm) cells demonstrated that the predominant failure mode was due to edge currents. These flat-plate cells failed at currents of only 4 to 20 A, which is one or two orders of magnitude below the model predictions. It thus appears that high-resistivity flat-plate cells are quite vulnerable to electrical overstress which could be produced by a variety of mechanisms.

Pease, R.L.; Barnum, J.R.; van Lint, V.A.J.; Vulliet, W.V.; Wrobel, T.F.

1982-11-01T23:59:59.000Z

100

US polycrystalline thin film solar cells program  

SciTech Connect (OSTI)

The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the US Department of Energy's long-term goals by achieving high efficiencies (15%-20%), low-cost ($50/m{sup 2}), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The US Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe{sub 2} and CdTe with subcontracts to start in Spring 1990. 23 refs., 5 figs.

Ullal, H.S.; Zweibel, K.; Mitchell, R.L. (Solar Energy Research Inst., Golden, CO (USA)) [Solar Energy Research Inst., Golden, CO (USA)

1989-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Thin film absorber for a solar collector  

DOE Patents [OSTI]

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, William G. (Cutchogue, NY)

1985-01-01T23:59:59.000Z

102

Microstructured surface design for omnidirectional antireflection coatings on solar cells  

E-Print Network [OSTI]

to current crystalline silicon solar cells, as well as future thin film, quantum dot, and organic solar cells as the precise control of film thick- ness. In solar cell applications, a single layer thin film AR coating, e.g., silicon nitride SiNx thin film for silicon Si solar cells, is often used as a cost effective approach

Zhou, Weidong

103

EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques  

E-Print Network [OSTI]

;3 Screen Printed Solar Cells · Firing the contacts ­ The furnace heats the cell to a high temperature by Efficiency 22 Rear Panel before Lamination 23 Buried Contact Solar Cells · High Efficiency · Laser groved1 EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques Dr. Todd J. Kaiser

Kaiser, Todd J.

104

au crystalline thin: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for manufacturing high...

105

applied type thin: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for manufacturing high...

106

Solar cell structure incorporating a novel single crystal silicon material  

DOE Patents [OSTI]

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

1983-01-01T23:59:59.000Z

107

Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer  

DOE Patents [OSTI]

An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

Carlson, David E. (Yardley, PA)

1982-01-01T23:59:59.000Z

108

Simulation of iron impurity gettering in crystalline silicon solar cells  

E-Print Network [OSTI]

This work discusses the Impurity-to-Efficiency (12E) simulation tool and applet. The 12E simulator models the physics of iron impurity gettering in silicon solar cells during high temperature processing. The tool also ...

Powell, Douglas M. (Douglas Michael)

2012-01-01T23:59:59.000Z

109

Silicon Valley Power- Solar Electric Buy Down Program  

Broader source: Energy.gov [DOE]

Silicon Valley Power (SVP) offers incentives for the installation of new grid-connected solar electric (photovoltaic, or PV) systems. Incentive levels will step down over the life of the program as...

110

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A substrate is described for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3{times}10{sup {minus}3} ohm-cm. 4 figs.

Ciszek, T.F.

1998-07-28T23:59:59.000Z

111

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A substrate for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3.times.10.sup.-3 ohm-cm.

Ciszek, Theodore F. (Evergreen, CO)

1998-01-01T23:59:59.000Z

112

Enabling Thin Silicon Solar Cell Technology  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series toESnet4: Networking for37 East and WestLydia

113

Polyaniline on crystalline silicon heterojunction solar cells Weining Wanga  

E-Print Network [OSTI]

-Si have long been of fundamental interest, and amorphous silicon a-Si:H /c-Si heterojunctions are now is about the current limit achieved with a-Si:H/c-Si heterojunctions. The largest VOC we ob- tained was 0Polyaniline on crystalline silicon heterojunction solar cells Weining Wanga and E. A. Schiff

Schiff, Eric A.

114

Cost-Effective Silicon Wafers for Solar Cells: Direct Wafer Enabling Terawatt Photovoltaics  

SciTech Connect (OSTI)

Broad Funding Opportunity Announcement Project: 1366 is developing a process to reduce the cost of solar electricity by up to 50% by 2020from $0.15 per kilowatt hour to less than $0.07. 1366s process avoids the costly step of slicing a large block of silicon crystal into wafers, which turns half the silicon to dust. Instead, the company is producing thin wafers directly from molten silicon at industry-standard sizes, and with efficiencies that compare favorably with todays state-of-the-art technologies. 1366s wafers could directly replace wafers currently on the market, so there would be no interruptions to the delivery of these products to market. As a result of 1366s technology, the cost of silicon wafers could be reduced by 80%.

None

2010-01-15T23:59:59.000Z

115

Copper doped polycrystalline silicon solar cell  

DOE Patents [OSTI]

Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

Lovelace, Alan M. Administrator of the National Aeronautics and Space (La Canada, CA); Koliwad, Krishna M. (La Canada, CA); Daud, Taher (La Crescenta, CA)

1981-01-01T23:59:59.000Z

116

CHARGE STABILITY IN LPCVD SILICON NITRIDE FOR SURFACE PASSIVATION OF SILICON SOLAR CELLS  

E-Print Network [OSTI]

CHARGE STABILITY IN LPCVD SILICON NITRIDE FOR SURFACE PASSIVATION OF SILICON SOLAR CELLS Yongling Ren, Natalita M Nursam, Da Wang and Klaus J Weber Centre for Sustainable Energy Systems, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 0200, Australia ABSTRACT

117

Low-Cost Light Weigh Thin Film Solar Concentrators  

Broader source: Energy.gov (indexed) [DOE]

Light Weight Thin Film Solar Concentrators PI: Gani B. Ganapathi (JPLCaltech) Other Contributors: L'Garde: Art Palisoc, Gyula Greschik, Koorosh Gidanian JPL: Bill Nesmith,...

118

CURRENT NEWS Sandwich Solar Cells May See Off Silicon  

E-Print Network [OSTI]

CURRENT NEWS Sandwich Solar Cells May See Off Silicon May 24, 2010 A new manufacturing technique of devices using GaAs chips manufactured in multilayer stacks: light sensors, high-speed transistors and solar cells. The authors also provide a detailed cost comparison. Another advantage of the multilayer

Rogers, John A.

119

Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells  

E-Print Network [OSTI]

Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells Kai Zhu a,1 , E Solar, Toano, VA 23168, USA Abstract We report infrared depletion modulation spectra for near an infrared modulation spectroscopy technique that probes the optical spectra of dopants and defects

Schiff, Eric A.

120

E-Print Network 3.0 - amorphous-silicon-based solar cell Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Vol. 609 2000 Materials Research Society Preparation of Microcrystalline Silicon Based Solar Cells at High i-layer Summary: light exposure as do the amorphous silicon-based...

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

NREL Develops ZnSiP2 for Silicon-Based Tandem Solar Cells (Fact Sheet)  

SciTech Connect (OSTI)

Combining an Earth-abundant chalcopyrite with a silicon layer could significantly boost conversion efficiency above that of single-junction silicon solar cells.

Not Available

2014-08-01T23:59:59.000Z

122

Modeling of thin-film solar thermoelectric generators  

E-Print Network [OSTI]

Recent advances in solar thermoelectric generator (STEG) performance have raised their prospect as a potential technology to convert solar energy into electricity. This paper presents an analysis of thin-film STEGs. ...

Weinstein, Lee Adragon

123

Formation of thin-film resistors on silicon substrates  

DOE Patents [OSTI]

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

1988-11-01T23:59:59.000Z

124

Thermal Conductivity of Ordered Mesoporous Nanocrystalline Silicon Thin Films Made from Magnesium Reduction of Polymer-  

E-Print Network [OSTI]

Thermal Conductivity of Ordered Mesoporous Nanocrystalline Silicon Thin Films Made from Magnesium-assembly of mesoporous silica followed by magnesium reduction. The periodic ordering of pores in mesoporous silicon

Pilon, Laurent

125

Transmissive metallic contact for amorphous silicon solar cells  

DOE Patents [OSTI]

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Madan, A.

1984-11-29T23:59:59.000Z

126

Improvement of pin-type amorphous silicon solar cell performance by employing double silicon-carbide p-layer structure  

E-Print Network [OSTI]

Improvement of pin-type amorphous silicon solar cell performance by employing double silicon-carbide Received 30 October 2003; accepted 18 November 2003 We investigated a double silicon-carbide p-layer structure consisting of a undiluted p-type amorphous silicon-carbide (p-a-SiC:H) window layer and a hydrogen

Kim, Yong Jung

127

SLID Interconnected n-in-p Pixel Modules with 75 Micrometer Thin Silicon Sensors  

E-Print Network [OSTI]

The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid

Andricek,L; Macchiolo,A; Moser,H-G; Nisius,R; Richter,R.H; Terzo,S; Weigell,P

2014-01-01T23:59:59.000Z

128

Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demsy and Sajeev John  

E-Print Network [OSTI]

Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demésy and Sajeev://jap.aip.org/about/rights_and_permissions #12;Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demesya

John, Sajeev

129

assisted grown silicon: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

130

acid modified silicone: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

131

athermal silicon microring: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

132

Solar power conversion efficiency in modulated silicon nanowire photonic Alexei Deinega and Sajeev John  

E-Print Network [OSTI]

Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinega://jap.aip.org/about/rights_and_permissions #12;Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinegaa that using only 1 lm of silicon, sculpted in the form of a modulated nanowire photonic crystal, solar power

John, Sajeev

133

Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light-Trapping Nanocone Gratings  

E-Print Network [OSTI]

Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light ABSTRACT: Enhancing the light absorption in ultrathin-film silicon solar cells is important for improving in the back reflector. KEYWORDS: Solar cells, light trapping, antireflection, crystalline silicon, absorption

Fan, Shanhui

134

NREL Success Stories - Quest for Inexpensive Silicon Solar Cells  

ScienceCinema (OSTI)

Scientists at the National Renewable Energy Laboratory (NREL) share their story about a successful partnership with Oak Ridge National Laboratory and the Ampulse Corporation and how support from the US Department of Energy's Technology Commercialization & Deployment Fund has helped it and their silicon solar cell research thrive.

Branz, Howard

2013-05-29T23:59:59.000Z

135

Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells  

E-Print Network [OSTI]

Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells Michael D. Kelzenberg, Daniel B-voltage measurements were made under simulated Air Mass 1.5 global illumination. Photovoltaic spectral response work by our group has shown that macroscopic Si wire arrays (>1 cm2 in area) suitable for photovoltaic

Atwater, Harry

136

Two-and three-dimensional folding of thin film single-crystalline silicon for photovoltaic  

E-Print Network [OSTI]

Two- and three-dimensional folding of thin film single-crystalline silicon for photovoltaic power of a functional, nonpla- nar photovoltaic (PV) device. A mechanics model based on the theory of thin plates self-folding photovoltaics capillary force Silicon, in crystalline and amorphous forms, is currently

Lewis, Jennifer

137

The analysis and optimization of a spherical silicon solar cell  

E-Print Network [OSTI]

silicon solar cell has been estimated using a cylindrical solar cell with some modifications as an approximate model. Calculations were made for both the cylindrical model and the conventional planar cell with the aid of a Fortran IV computer program... ln the p nnd n layers, respect lvely (cm I) N(X) monochromatic photon flux incident on the solar cell (cm g sec ~ o ) N 0 number of photons/cm sec with wavelengths shorter than l. lp (cm sec ) n po' no thermal equilibrium concentration...

McKee, William Randall

1976-01-01T23:59:59.000Z

138

Photonic assisted light trapping integrated in ultrathin crystalline silicon solar cells by nanoimprint lithography  

E-Print Network [OSTI]

We report on the fabrication of two-dimensional periodic photonic nanostructures by nanoimprint lithography and dry etching, and their integration into a 1-{\\mu}m-thin mono-crystalline silicon solar cell. Thanks to the periodic nanopatterning, a better in-coupling and trapping of light is achieved, resulting in an absorption enhancement. The proposed light trapping mechanism can be explained as the superposition of a graded index effect and of the diffraction of light inside the photoactive layer. The absorption enhancement is translated into a 23% increase in short-circuit current, as compared to the benchmark cell, resulting in an increase in energy-conversion efficiency.

Trompoukis, Christos; Depauw, Valrie; Gordon, Ivan; Poortmans, Jef; 10.1063/1.4749810.

2012-01-01T23:59:59.000Z

139

Amorphous Silicon Solar cells with a Core-Shell Nanograting Structure  

E-Print Network [OSTI]

We systematically investigate the optical behaviors of an amorphous silicon solar cell based on a core-shell nanograting structure. The horizontally propagating Bloch waves and Surface Plasmon Polariton (SPP) waves lead to significant absorption enhancements and consequently short-circuit current enhancements of this structure, compared with the conventional planar one. The perpendicular carrier collection makes this structure optically thick and electronically thin. An optimal design is achieved through full-field numerical simulation, and physical explanation is given. Our numerical results show that this configuration has ultrabroadband, omnidirectional and polarization-insensitive responses, and has a great potential in photovoltaics.

Yang, L; Okuno, Y; He, S

2011-01-01T23:59:59.000Z

140

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Disorder improves nanophotonic light trapping in thin-film solar cells  

SciTech Connect (OSTI)

We present a systematic experimental study on the impact of disorder in advanced nanophotonic light-trapping concepts of thin-film solar cells. Thin-film solar cells made of hydrogenated amorphous silicon were prepared on imprint-textured glass superstrates. For periodically textured superstrates of periods below 500?nm, the nanophotonic light-trapping effect is already superior to state-of-the-art randomly textured front contacts. The nanophotonic light-trapping effect can be associated to light coupling to leaky waveguide modes causing resonances in the external quantum efficiency of only a few nanometer widths for wavelengths longer than 500?nm. With increasing disorder of the nanotextured front contact, these resonances broaden and their relative altitude decreases. Moreover, overall the external quantum efficiency, i.e., the light-trapping effect, increases incrementally with increasing disorder. Thereby, our study is a systematic experimental proof that disorder is conceptually an advantage for nanophotonic light-trapping concepts employing grating couplers in thin-film solar cells. The result is relevant for the large field of research on nanophotonic light trapping in thin-film solar cells which currently investigates and prototypes a number of new concepts including disordered periodic and quasi periodic textures.

Paetzold, U. W., E-mail: u.paetzold@fz-juelich.de; Smeets, M.; Meier, M.; Bittkau, K.; Merdzhanova, T.; Smirnov, V.; Carius, R.; Rau, U. [IEK5Photovoltaik, Forschungszentrum Jlich GmbH, 52425 Jlich (Germany); Michaelis, D.; Waechter, C. [Fraunhofer Institut fr Angewandte Optik und Feinmechanik, Albert Einstein Str. 7, D-07745 Jena (Germany)

2014-03-31T23:59:59.000Z

142

Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide  

SciTech Connect (OSTI)

This paper proposes the application of gallium oxide (Ga{sub 2}O{sub 3}) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga{sub 2}O{sub 3} films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O{sub 3}) as the reactants. Surface recombination velocities as low as 6.1?cm/s have been recorded with films less than 4.5?nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2?/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga{sub 2}O{sub 3} interface has been found to be approximately 0.5?eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9?eV.

Allen, T. G., E-mail: thomas.allen@anu.edu.au; Cuevas, A. [Research School of Engineering, Australian National University, Canberra 0200 (Australia)

2014-07-21T23:59:59.000Z

143

High-efficiency concentrator silicon solar cells  

SciTech Connect (OSTI)

This report presents results from extensive process development in high-efficiency Si solar cells. An advanced design for a 1.56-cm{sup 2} cell with front grids achieved 26% efficiency at 90 suns. This is especially significant since this cell does not require a prismatic cover glass. New designs for simplified backside-contact solar cells were advanced from a status of near-nonfunctionality to demonstrated 21--22% for one-sun cells in sizes up to 37.5 cm{sup 2}. An efficiency of 26% was achieved for similar 0.64-cm{sup 2} concentrator cells at 150 suns. More fundamental work on dopant-diffused regions is also presented here. The recombination vs. various process and physical parameters was studied in detail for boron and phosphorous diffusions. Emitter-design studies based solidly upon these new data indicate the performance vs design parameters for a variety of the cases of most interest to solar cell designers. Extractions of p-type bandgap narrowing and the surface recombination for p- and n-type regions from these studies have a generality that extends beyond solar cells into basic device modeling. 68 refs., 50 figs.

Sinton, R.A.; Cuevas, A.; King, R.R.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

1990-11-01T23:59:59.000Z

144

Ultra-Thin Metal Films for Enhanced Solar Absorption  

E-Print Network [OSTI]

This paper presents modelled results for optical absorption in ultra-thin films of nickel, gold and silver over the solar spectrum. It is found in the case of nickel there is an optimum thickness for maximum solar absorption around 10-13nm. This effect is not observed for gold or silver. It is postulated that this is an interference effect occurring due the particular real and imaginary refractive profile of nickel across the solar spectrum.

Ahmad, N; Teng, M; Cryan, M J

2012-01-01T23:59:59.000Z

145

Processes for producing low cost, high efficiency silicon solar cells  

DOE Patents [OSTI]

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x.

Rohatgi, Ajeet (Marietta, GA); Chen, Zhizhang (Duluth, GA); Doshi, Parag (Atlanta, GA)

1996-01-01T23:59:59.000Z

146

Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint  

SciTech Connect (OSTI)

We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

2011-07-01T23:59:59.000Z

147

antibiotic-impregnated silicone rubber: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

148

Preprint 24th EU PVSEC, 2009, Hamburg FITTING OF LATERAL RESISTANCES IN SILICON SOLAR CELLS  

E-Print Network [OSTI]

Preprint 24th EU PVSEC, 2009, Hamburg FITTING OF LATERAL RESISTANCES IN SILICON SOLAR CELLS cell from electroluminescence (EL) is introduced. A two-dimensional model of the solar cell screen printed monocrystalline silicon solar cell are shown and the influence of lateral diffusion

Junk, Michael

149

Ninth workshop on crystalline silicon solar cell materials and processes: Summary discussion sessions  

SciTech Connect (OSTI)

This report is a summary of the panel discussions included with the Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme for the workshop was ``R and D Challenges and Opportunities in Si Photovoltaics.'' This theme was chosen because it appropriately reflects a host of challenges that the growing production of Si photovoltaics will be facing in the new millennium. The anticipated challenges will arise in developing strategies for cost reduction, increased production, higher throughput per manufacturing line, new sources of low-cost Si, and the introduction of new manufacturing processes for cell production. At the same time, technologies based on CdTe and CIS will come on line posing new competition. With these challenges come new opportunities for Si PV to wean itself from the microelectronics industry, to embark on a more aggressive program in thin-film Si solar cells, and to try new approaches to process monitoring.

Sopori, B.; Tan, T.; Swanson, D.; Rosenblum, M.; Sinton, R.

1999-11-23T23:59:59.000Z

150

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

Sites, James R.

151

E-Print Network 3.0 - amorphous-silicon solar cells Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

with silver nanoparticlessolar cells with silver nanoparticles C. Eminian, F... silicon solar cells to achieve light trapping. Nanoparticles have a size 200nm and are...

152

p Channel thin lm transistor and complementary metaloxidesilicon inverter made of microcrystalline silicon  

E-Print Network [OSTI]

p Channel thin ®lm transistor and complementary metal±oxide±silicon inverter made ®lm transistor (TFT) made of directly deposited microcrystalline silicon (lc-Si). The lc-Si channel°C. By integrating this p TFT on a single lc-Si ®lm with an n channel TFT, we fabricated

153

Solar Energy Materials & Solar Cells 58 (1999) 199}208 The behaviour of Na implanted into Mo thin "lms  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 58 (1999) 199}208 The behaviour of Na implanted into Mo thin, As ngstro( m Solar Center, P.O. Box 534, SE-751 21 Uppsala, Sweden Department of Materials Science Mo thin "lms used as back contacts for Cu(In,Ga)Se solar cells. The samples were analysed

Rockett, Angus

154

High-performance porous silicon solar cell development. Final report, October 1, 1993--September 30, 1995  

SciTech Connect (OSTI)

The goal of the program was to demonstrate use of porous silicon in new solar cell structures. Porous silicon technology has been developed at Spire for producing visible light-emitting diodes (LEDs). The major aspects that they have demonstrated are the following: porous silicon active layers have been made to show photovoltaic action; porous silicon surface layers can act as antireflection coatings to improve the performance of single-crystal silicon solar cells; and porous silicon surface layers can act as antireflection coatings on polycrystalline silicon solar cells. One problem with the use of porous silicon is to achieve good lateral conduction of electrons and holes through the material. This shows up in terms of poor blue response and photocurrents which increase with increasing reverse bias applied to the diode.

Maruska, P. [Spire Corp., Bedford, MA (United States)] [Spire Corp., Bedford, MA (United States)

1996-09-01T23:59:59.000Z

155

Silicon Valley Solar Inc SV Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revisionEnvReviewNonInvasiveExplorationUT-g Grant ofRichardton AbbeyARaftPadomaSierra Leone)Sikes ActSiGenSV Solar

156

Novel buried contact technology for advanced silicon solar cells  

SciTech Connect (OSTI)

Increased efficiency of silicon solar cells has resulted in the increased complexity and cost of manufacture. Optical properties can be enhanced by increasing the optical path length, while minimizing both bulk and surface recombination. Conventional silicon based solar cells are fabricated by a series of physical or chemical vapor deposition processes followed by photolithography and etching processes for each layer. These repeated deposition and etching cycles are not only difficult to perform but they also generate severe surface topography. This topography is a major cause of yield loss and reliability problems for advanced solar cells. These problems are especially severe for high aspect ratio contact holes. An alternative method of performing this metallization inexpensively and reliably is by the use of electroless plating. As the plating process occurs selectively on Si and not on the surface passivation layer, thick metal films (Ni and Cu) can be deposited which depend entirely upon the depth of the trench used. The advantages of electroless plating as an alternative to standard metallization will be presented.

Ni Dheasuna, C.; Mathewson, A.; Hecking, L.; Wrixon, G.T. [National Microelectronics Research Centre, Cork (Ireland)

1994-12-31T23:59:59.000Z

157

Tax Credits Give Thin-Film Solar a Big Boost | Department of...  

Broader source: Energy.gov (indexed) [DOE]

Thin-Film Solar a Big Boost October 18, 2010 - 2:00pm Addthis MiaSol will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery...

158

Bendable single crystal silicon thin film transistors formed by printing on plastic substrates  

E-Print Network [OSTI]

Bendable single crystal silicon thin film transistors formed by printing on plastic substrates E on plastic substrates using an efficient dry transfer printing technique. In these devices, free standing-Si is then transferred, to a specific location and with a controlled orientation, onto a thin plastic sheet

Rogers, John A.

159

almgb14 thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

160

aggase2 thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

area thin film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

162

aluminide thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

163

antiferroelectric thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

164

ain thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

165

advanced thin film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

166

Silicon-integrated thin-film structure for electro-optic applications  

DOE Patents [OSTI]

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

McKee, Rodney A. (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

167

High efficiency silicon nanohole/organic heterojunction hybrid solar cell  

SciTech Connect (OSTI)

High efficiency hybrid solar cells are fabricated based on silicon with a nanohole (SiNH) structure and poly (3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). The SiNH structure is fabricated using electroless chemical etching with silver catalyst, and the heterojunction is formed by spin coating of PEDOT on the SiNH. The hybrid cells are optimized by varying the hole depth, and a maximum power conversion efficiency of 8.3% is achieved with a hole depth of 1??m. The SiNH hybrid solar cell exhibits a strong antireflection and light trapping property attributed to the sub-wavelength dimension of the SiNH structure.

Hong, Lei [Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Singapore Institute of Manufacturing Technology, A-STAR (Agency for Science, Technology and Research), 71 Nanyang Drive, Singapore 638075 (Singapore); Wang, Xincai; Zheng, Hongyu [Singapore Institute of Manufacturing Technology, A-STAR (Agency for Science, Technology and Research), 71 Nanyang Drive, Singapore 638075 (Singapore); He, Lining; Wang, Hao; Rusli, E-mail: yu.hy@sustc.edu.cn, E-mail: erusli@ntu.edu.sg [Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Yu, Hongyu, E-mail: yu.hy@sustc.edu.cn, E-mail: erusli@ntu.edu.sg [South University of Science and Technology of China, Shenzhen (China)

2014-02-03T23:59:59.000Z

168

Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics  

E-Print Network [OSTI]

nanowire networks as window layers in thin film solar cells.window layer for fully solution-deposited thin filmITO) thin films by silver nanowire composite window layers

Chung, Choong-Heui

2012-01-01T23:59:59.000Z

169

Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells  

E-Print Network [OSTI]

Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells D.L. Pulfrey*, J. Dell): pulfrey@ece.ubc.ca ABSTRACT Cadmium telluride thin-film solar cells are now commercially available be attainable. 1. INTRODUCTION Thin film solar cells based on polycrystalline CdTe have been investigated

Pulfrey, David L.

170

EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS  

E-Print Network [OSTI]

EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS Yun Seog Lee 1; * Corresponding author: buonassisi@mit.edu; ABSTRACT We investigate earth abundant materials for thin- film solar cuprous oxide (Cu2O) as a prototype candidate for investigation as an absorber layer in thin film solar

Ceder, Gerbrand

171

Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells  

E-Print Network [OSTI]

Femtosecond laser ablation of indium tin-oxide narrow grooves for thin film solar cells Qiumei Bian in the fabrication and assembly of thin film solar cells. Using a femtosecond (fs) laser, we selectively removed a unique scheme to ablate the indium tin-oxide layer for the fabrication of thin film solar cells

Van Stryland, Eric

172

Metal-black scattering centers to enhance light harvesting by thin-film solar cells  

E-Print Network [OSTI]

Metal-black scattering centers to enhance light harvesting by thin-film solar cells Deep Panjwania as scattering centers to increase the effective optical thickness of thin-film solar cells. The particular type. Gold-black was deposited on commercial thin-film solar cells using a thermal evaporator in nitrogen

Peale, Robert E.

173

Electroabsorption measurements and built-in potentials in amorphous silicon pin solar cells  

E-Print Network [OSTI]

and the capacitance of such devices. We apply this technique to hydrogenated amorphous silicon a-Si:H -based solar-6951 96 04246-5 The internal electric fields of amporphous silicon a- Si:H -based p­i­n solar cells on electroluminescent organic heterostructure diodes . We con- firmed this interpretation by studying a-Si:H n

Schiff, Eric A.

174

FIRST SOLAR CELLS ON SILICON RIBBONS OBTAINED BY FAST CVD FROM SILANE  

E-Print Network [OSTI]

FIRST SOLAR CELLS ON SILICON RIBBONS OBTAINED BY FAST CVD FROM SILANE C. R. Pinto, J. M. Serra, M Lisboa Campo Grande, 1749-016 Lisboa, Portugal ABSTRACT: : In this paper we report our first results on solar cells made on silicon ribbons obtained by a two-step process: pre-ribbons obtained by CVD followed

Lisbon, University of

175

One-sun, single-crystalline silicon solar cell research  

SciTech Connect (OSTI)

The point-contact solar cell design, the most efficient silicon concentrator solar cell design to date, is explored for use in one-sun applications. The necessary modifications to backside-contact concentrator cell design for operation at one-sun are explored and implemented. Large-area, point-contact solar cells were fabricated on n- and p-type substrates in low-level injection (LLI). The characteristics of these LLI cells were compared to those of four different architectures of cells with substrates in high-level injection (HLI). Both types of cell achieved open-circuit voltages over 700 mV at one-sun, LLI cells had higher fill factors, and HLI cells had substantially higher short-circuit currents. The mechanisms responsible for these observations are discussed. The high V{sub oc} and J{sub sc} of the HLI cells combine to make them more efficient than the LLI cells, with efficiencies measured at Sandia up to 22.7% for a 37.5-cm{sup 2} cell at one sun. This is the highest one-sun efficiency for a silicon cell larger than 4 cm{sup 2}. Simplified, backside-contact solar cell processes were also developed, which have nearly 100% yield. Over 80 such cells, each with a 35-cm{sup 2} area or greater, were delivered to Sandia. Cells made with these simplified processes had efficiencies up to 21.3% for a 37.5-cm{sup 2} cell. The recombination properties of Si{sub 3}N{sub 4} layers over SiO{sub 2} were characterized, since Si{sub 3}N{sub 4} is an excellent antireflection coating for cells laminated under glass. Several prototype flat-plate modules of backside-contact cells were built, with up to 24 cells and efficiencies up to 19%. 26 refs., 16 figs., 4 tabs.

King, R.R.; Sinton, R.A.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

1991-06-01T23:59:59.000Z

176

Focused ion beam specimen preparation for electron holography of electrically biased thin film solar cells  

E-Print Network [OSTI]

, biased TEM specimen, thin film solar cell, FIB Thin films of hydrogenated Si (Si:H) can be used as active for electron holography of a thin film solar cell using conventional lift-out specimen preparation and a homeFocused ion beam specimen preparation for electron holography of electrically biased thin film

Dunin-Borkowski, Rafal E.

177

EE580 Solar Cells Todd J. Kaiser  

E-Print Network [OSTI]

7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 06 · Solar Cell Materials & Structures 1Montana State University: Solar Cells Lecture 6: Solar Cells Solar Cell Technologies · A) Crystalline Silicon · B) Thin Film · C) Group III-IV Cells 2Montana State University: Solar Cells Lecture 6: Solar

Kaiser, Todd J.

178

Processes for producing low cost, high efficiency silicon solar cells  

DOE Patents [OSTI]

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime {tau} and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime {tau} and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO{sub x}. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure. 28 figs.

Rohatgi, A.; Doshi, P.; Tate, J.K.; Mejia, J.; Chen, Z.

1998-06-16T23:59:59.000Z

179

Processes for producing low cost, high efficiency silicon solar cells  

DOE Patents [OSTI]

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure.

Rohatgi, Ajeet (Marietta, GA); Doshi, Parag (Altanta, GA); Tate, John Keith (Lawrenceville, GA); Mejia, Jose (Atlanta, GA); Chen, Zhizhang (Duluth, GA)

1998-06-16T23:59:59.000Z

180

The origin of white luminescence from silicon oxycarbide thin films  

SciTech Connect (OSTI)

Silicon oxycarbide (SiC{sub x}O{sub y}) is a promising material for achieving strong room-temperature white luminescence. The present work investigated the mechanisms for light emission in the visible/ultraviolet range (1.54.0?eV) from chemical vapor deposited amorphous SiC{sub x}O{sub y} thin films, using a combination of optical characterizations and electron paramagnetic resonance (EPR) measurements. Photoluminescence (PL) and EPR studies of samples, with and without post-deposition passivation in an oxygen and forming gas (H{sub 2} 5 at.?% and N{sub 2} 95 at.?%) ambient, ruled out typical structural defects in oxides, e.g., Si-related neutral oxygen vacancies or non-bridging oxygen hole centers, as the dominant mechanism for white luminescence from SiC{sub x}O{sub y}. The observed intense white luminescence (red, green, and blue emission) is believed to arise from the generation of photo-carriers by optical absorption through C-Si-O related electronic transitions, and the recombination of such carriers between bands and/or at band tail states. This assertion is based on the realization that the PL intensity dramatically increased at an excitation energy coinciding with the E{sub 04} band gaps of the material, as well as by the observed correlation between the Si-O-C bond density and the PL intensity. An additional mechanism for the existence of a blue component of the white emission is also discussed.

Nikas, V.; Gallis, S., E-mail: sgalis@us.ibm.com; Huang, M.; Kaloyeros, A. E. [College of Nanoscale Sciences and Engineering, State University of New York, Albany, New York 12203 (United States); Nguyen, A. P. D.; Stesmans, A.; Afanas'ev, V. V. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium)

2014-02-10T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Light trapping in thin-film solar cells measured by Raman spectroscopy  

SciTech Connect (OSTI)

In this study, Raman spectroscopy is used as a tool to determine the light-trapping capability of textured ZnO front electrodes implemented in microcrystalline silicon (?c-Si:H) solar cells. Microcrystalline silicon films deposited on superstrates of various roughnesses are characterized by Raman micro-spectroscopy at excitation wavelengths of 442?nm, 514?nm, 633?nm, and 785?nm, respectively. The way to measure quantitatively and with a high level of reproducibility the Raman intensity is described in details. By varying the superstrate texture and with it the light trapping in the ?c-Si:H absorber layer, we find significant differences in the absolute Raman intensity measured in the near infrared wavelength region (where light trapping is relevant). A good agreement between the absolute Raman intensity and the external quantum efficiency of the ?c-Si:H solar cells is obtained, demonstrating the validity of the introduced method. Applications to thin-film solar cells, in general, and other optoelectronic devices are discussed.

Ledinsk, M., E-mail: ledinsky@fzu.cz [Laboratory of Nanostructures and Nanomaterials, Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Cukrovarnick 10, 162 00 Prague (Czech Republic); Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), cole Polytechnique Fdrale de Lausanne (EPFL), Rue de la Maladire 71b, CH-2000 Neuchtel (Switzerland); Moulin, E.; Bugnon, G.; Meillaud, F.; Ballif, C. [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), cole Polytechnique Fdrale de Lausanne (EPFL), Rue de la Maladire 71b, CH-2000 Neuchtel (Switzerland); Ganzerov, K.; Vetushka, A.; Fejfar, A. [Laboratory of Nanostructures and Nanomaterials, Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Cukrovarnick 10, 162 00 Prague (Czech Republic)

2014-09-15T23:59:59.000Z

182

The ultra-thin solar cells that could generate power through windows  

E-Print Network [OSTI]

The ultra-thin solar cells that could generate power through windows By Claire Bates Last updated, generating enough electricity to power the GPS or air conditioning. Solar cells, which convert solar energy into tinted windows Page 1 of 3The ultra-thin solar cells that could generate power through windows | Mail

Rogers, John A.

183

Thin, High Lifetime Silicon Wafers with No Sawing; Re-crystallization in a Thin Film Capsule  

SciTech Connect (OSTI)

The project fits within the area of renewable energy called photovoltaics (PV), or the generation of electricity directly from sunlight using semiconductor devices. PV has the greatest potential of any renewable energy technology. The vast majority of photovoltaic modules are made on crystalline silicon wafers and these wafers accounts for the largest fraction of the cost of a photovoltaic module. Thus, a method of making high quality, low cost wafers would be extremely beneficial to the PV industry The industry standard technology creates wafers by casting an ingot and then sawing wafers from the ingot. Sawing rendered half of the highly refined silicon feedstock as un-reclaimable dust. Being a brittle material, the sawing is actually a type of grinding operation which is costly both in terms of capital equipment and in terms of consumables costs. The consumables costs associated with the wire sawing technology are particularly burdensome and include the cost of the wire itself (continuously fed, one time use), the abrasive particles, and, waste disposal. The goal of this project was to make wafers directly from molten silicon with no sawing required. The fundamental concept was to create a very low cost (but low quality) wafer of the desired shape and size and then to improve the quality of the wafer by a specialized thermal treatment (called re-crystallization). Others have attempted to create silicon sheet by recrystallization with varying degrees of success. Key among the difficulties encountered by others were: a) difficulty in maintaining the physical shape of the sheet during the recrystallization process and b) difficulty in maintaining the cleanliness of the sheet during recrystallization. Our method solved both of these challenges by encapsulating the preform wafer in a protective capsule prior to recrystallization (see below). The recrystallization method developed in this work was extremely effective at maintaining the shape and the cleanliness of the wafer. In addition, it was found to be suitable for growing very large crystals. The equipment used was simple and inexpensive to operate. Reasonable solar cells were fabricated on re-crystallized material.

Emanuel Sachs

2013-01-16T23:59:59.000Z

184

Role of point defects/defect complexes in silicon device processing. Book of abstracts, fourth workshop  

SciTech Connect (OSTI)

The 41 abstracts are arranged into 6 sessions: impurities and defects in commercial substrates: their sources, effects on material yield, and material quality; impurity gettering in silicon: limits and manufacturability of impurity gettering and in silicon solar cells; impurity/defect passivation; new concepts in silicon growth: improved initial quality and thin films; and silicon solar cell design opportunities.

Not Available

1994-06-01T23:59:59.000Z

185

Solar Thin Power | Open Energy Information  

Open Energy Info (EERE)

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186

15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers  

SciTech Connect (OSTI)

The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

Sopori, B. L.

2005-11-01T23:59:59.000Z

187

Thin film solar cell including a spatially modulated intrinsic layer  

DOE Patents [OSTI]

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

1989-03-28T23:59:59.000Z

188

16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers  

SciTech Connect (OSTI)

The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

Sopori, B. L.

2006-08-01T23:59:59.000Z

189

Structure of All-Polymer Solar Cells Impedes Efficiency  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

thin films of semiconducting polymers as a possible alternative to silicon-based solar cells. Such devices would have the advantages of being cheap to produce,...

190

Materials Science and Engineering B 134 (2006) 282286 Control of metal impurities in "dirty" multicrystalline silicon for solar cells  

E-Print Network [OSTI]

" multicrystalline silicon for solar cells A.A. Istratova,b,, T. Buonassisia,b,1, M.D. Picketta,b, M. Heuera,b, E processing of solar cells with satisfactory energy conversion efficiency based on inexpensive feedstock.V. All rights reserved. Keywords: Photovoltaics; Solar cells; Solar-grade silicon; Defect engineering

2006-01-01T23:59:59.000Z

191

21.9% efficient silicon bifacial solar cells  

SciTech Connect (OSTI)

This paper reports the efficiency of bifacial silicon solar cells and mini-modules fabricated at SunPower Corp. The best cell has AM1.5G front efficiency of 21.9% and rear efficiency of 13.9%. The mini-modules, each containing 20 bifacial cells, attain efficiency as high as the average efficiency of their individual cells. The best module has AM1.5G front efficiency of 20.66% and rear efficiency of 10.54%. Optical properties of the bifacial cells have also been measured and analyzed. The results show that bifacial cells, compared to monofacial cells, absorb less infrared light and thus they can operate at lower temperature in space.

Zhou, C.Z.; Verlinden, P.J.; Crane, R.A.; Swanson, R.M. [SunPower Corp., Sunnyvale, CA (United States); Sinton, R.A. [Sinton Consulting, San Jose, CA (United States)

1997-12-31T23:59:59.000Z

192

Solar Cells Beyond Silicon Keld West, The Danish Polymer Centre, Ris National Laboratory, DK-4000  

E-Print Network [OSTI]

1 Solar Cells Beyond Silicon Keld West, The Danish Polymer Centre, Risø National Laboratory, DK of utilising solar energy, but this direct energy transfer does not involve the elements of focusing solar energy in a way that is economically competitive, also in regions where other energy sources

193

c e n t r e t Solar Cells Beyond Silicon  

E-Print Network [OSTI]

1 POLYMER c e n t r e t Solar Cells Beyond Silicon Keld West The Danish Polymer Centre Ris National Laboratory #12;Ris Int. Energy Conference, May 2003 2 POLYMER c e n t r e t Solar Energy Energy Int. Energy Conference, May 2003 3 POLYMER c e n t r e t Solar Energy, Perspective The earth

194

Solar-to-Hydrogen Photovoltaic/Photoelectrochemical Devices Using Amorphous Silicon Carbide as the Photoelectrode  

SciTech Connect (OSTI)

We report the use of hydrogenated amorphous silicon carbide (a-SiC:H) prepared by plasma enhanced chemical vapor deposition (PECVD) as the photoelectrode in an integrated 'hybrid' photoelectrochemical (PEC) cell to produce hydrogen directly from water using sunlight. Results on the durability of hydrogenated amorphous silicon carbide (a-SiC:H) photoelectrodes in an electrolyte are presented. In a pH2 electrolyte, the a-SiC:H photoelectrode exhibits excellent stability for 100 hour test so far performed. A photocurrent onset shift (anodically) after a 24- or 100-hour durability test in electrolyte is observed, likely due to changes in the surface chemical structure of the a-SiC:H photoelectrode. It is also observed that a thin SiOx layer native to the air exposed surface of the a-SiC:H affects the photocurrent and the its onset shift. Finally, approaches for eliminating the external bias voltage and enhancing the solar-to-hydrogen efficiency in a PV/PEC hybrid structure to achieve {>=} 10% are presented.

Hu, J.; Zhu, F.; Matulionis, I.; Kunrath, A.; Deutsch, T.; Kuritzky, L.; Miller, E.; Madan, A.

2008-01-01T23:59:59.000Z

195

LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle  

E-Print Network [OSTI]

LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle Physics response map, was developed and used to map defects in thin-film solar cells [4]. Improvements to the two) measurements are providing a direct link between the spatial non-uniformities inherent in thin-film

Sites, James R.

196

Solar Grade Silicon from Agricultural By-products  

SciTech Connect (OSTI)

In this project, Mayaterials developed a low cost, low energy and low temperature method of purifying rice hull ash to high purity (5-6Ns) and converting it by carbothermal reduction to solar grade quality silicon (Sipv) using a self-designed and built electric arc furnace (EAF). Outside evaluation of our process by an independent engineering firm confirms that our technology greatly lowers estimated operating expenses (OPEX) to $5/kg and capital expenses (CAPEX) to $24/kg for Sipv production, which is well below best-in-class plants using a Siemens process approach (OPEX of 14/kg and CAPEX of $87/kg, respectively). The primary limiting factor in the widespread use of photovoltaic (PV) cells is the high cost of manufacturing, compared to more traditional sources to reach 6 g Sipv/watt (with averages closer to 8+g/watt). In 2008, the spot price of Sipv rose to $450/kg. While prices have since dropped to a more reasonable $25/kg; this low price level is not sustainable, meaning the longer-term price will likely return to $35/kg. The 6-8 g Si/watt implies that the Sipv used in a module will cost $0.21-0.28/watt for the best producers (45% of the cost of a traditional solar panel), a major improvement from the cost/wafer driven by the $50/kg Si costs of early 2011, but still a major hindrance in fulfilling DOE goal of lowering the cost of solar energy below $1/watt. The solar cell industry has grown by 40% yearly for the past eight years, increasing the demand for Sipv. As such, future solar silicon price spikes are expected in the next few years. Although industry has invested billions of dollars to meet this ever-increasing demand, the technology to produce Sipv remains largely unchanged requiring the energy intensive, and chlorine dependent Siemens process or variations thereof. While huge improvements have been made, current state-of-the-art industrial plant still use 65 kWh/kg of silicon purified. Our technology offers a key distinction to other technologies as it starts one step upstream from all other Sipv production efforts. Our process starts by producing high purity SiO2/C feedstocks from which Sipv can be produced in a single, chlorine free, final EAF step. Specifically, our unique technology, and the resultant SiO2/C product can serve as high purity feedstocks to existing metallurgical silicon (Simet) producers, allowing them to generate Sipv with existing US manufacturing infrastructure, reducing the overall capital and commissioning schedule. Our low energy, low CAPEX and OPEX process purifies the silica and carbon present in rice hull ash (RHA) at low temperatures (< 200C) to produce high purity (5-6 Ns) feedstock for production of Sipv using furnaces similar to those used to produce Simet. During the course of this project we partnered with Wadham Energy LP (Wadham), who burns 220k ton of rice hulls (RH)/yr generating 200 GWh of electricity/yr and >30k ton/yr RHA. The power generation step produces much more energy (42 kWh/kg of final silicon produced) than required to purify the RHA (5 kWh/kg of Sipv, compared to 65 kWh/kg noted above. Biogenic silica offers three very important foundations for producing high purity silicon. First, wastes from silica accumulating plants, such as rice, corn, many grasses, algae and grains, contain very reactive, amorphous silica from which impurities are easily removed. Second, plants take up only a limited set of, and minimal quantities of the heavy metals present in nature, meaning fewer minerals must be removed. Third, biomass combustion generates a product with intrinsic residual carbon, mixed at nanometer length scales with the SiO2. RHA is 80-90 wt% high surface area (20 m2/g), amorphous SiO2 with some simple mineral content mixed intimately with 5-15 wt% carbon. The mineral content is easily removed by low cost, acid washes using Mayaterials IP, leading to purified rice hull ash (RHAclean) at up to 6N purity. This highly reactive silica is partially extracted from RHAclean at 200 C in an environmentally benign process to adjust SiO2:C ratios to those needed in EA

Richard M. Laine

2012-08-20T23:59:59.000Z

197

abrasion-resistant thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

198

al-cu-fe thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

199

alendronate-hydroxyapatite thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

200

ag-in-se thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells  

E-Print Network [OSTI]

Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells Nicholas P of solar energy conversion be- cause they use thin films of photoactive material and can be manufactured and photocurrent in flexible organic solar cells. We demonstrate that this enhancement is attributed to a broadband

Fan, Shanhui

202

METAL BLACKS AS SCATTERING CENTERS TO INCREASE THE EFFICIENCY OF THIN FILM SOLAR CELLS  

E-Print Network [OSTI]

METAL BLACKS AS SCATTERING CENTERS TO INCREASE THE EFFICIENCY OF THIN FILM SOLAR CELLS by DEEP R surface of thin-film solar cells to improve efficiency. The principle is that scattering, which film solar cell. The particular types of particles investigated here are known as "metal-black", well

Peale, Robert E.

203

Optimized scalable stack of fluorescent solar concentrator systems with bifacial silicon solar cells  

SciTech Connect (OSTI)

In this paper, we present a concentrator system based on a stack of fluorescent concentrators (FCs) and a bifacial solar cell. Coupling bifacial solar cells to a stack of FCs increases the performance of the system and preserves its efficiency when scaled. We used an approach to optimize a fluorescent solar concentrator system design based on a stack of multiple fluorescent concentrators (FC). Seven individual fluorescent collectors (20?mm??20?mm??2?mm) were realized by in-situ polymerization and optically characterized in regard to their ability to guide light to the edges. Then, an optimization procedure based on the experimental data of the individual FCs was carried out to determine the stack configuration that maximizes the total number of photons leaving edges. Finally, two fluorescent concentrator systems were realized by attaching bifacial silicon solar cells to the optimized FC stacks: a conventional system, where FC were attached to one side of the solar cell as a reference, and the proposed bifacial configuration. It was found that for the same overall FC area, the bifacial configuration increases the short-circuit current by a factor of 2.2, which is also in agreement with theoretical considerations.

Martnez Dez, Ana Luisa, E-mail: a.martinez@itma.es [Fundacin ITMA, Parque Empresarial Principado de Asturias, C/Calafates, Parcela L-3.4, 33417 Avils (Spain); Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Gutmann, Johannes; Posdziech, Janina; Rist, Tim; Goldschmidt, Jan Christoph [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Plaza, David Gmez [Fundacin ITMA, Parque Empresarial Principado de Asturias, C/Calafates, Parcela L-3.4, 33417 Avils (Spain)

2014-10-21T23:59:59.000Z

204

(Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor-and solar-  

E-Print Network [OSTI]

Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor- and solar- grade and aluminum alloys and the chemical industry. The semiconductor and solar industries, which manufacture chips China, 49%; Russia, 20

205

Spin Coated Plasmonic Nanoparticle Interfaces for Photocurrent Enhancement in Thin Film Si Solar Cells  

E-Print Network [OSTI]

Nanoparticle (NP) arrays of noble metals strongly absorb light in the visible to infrared wavelengths through resonant interactions between the incident electromagnetic field and the metal's free electron plasma. Such plasmonic interfaces enhance light absorption and photocurrent in solar cells. We report a cost effective and scalable room temperature/pressure spin-coating route to fabricate broadband plasmonic interfaces consisting of silver NPs. The NP interface yields photocurrent enhancement (PE) in thin film silicon devices by up to 200% which is significantly greater than previously reported values. For coatings produced from Ag nanoink containing particles with average diameter of 40 nm, an optimal NP surface coverage of 7% was observed. Scanning electron microscopy of interface morphologies revealed that for low surface coverage, particles are well-separated, resulting in broadband PE. At higher surface coverage, formation of particle strings and clusters caused red-shifting of the PE peak and a narro...

Israelowitz, Miriam; Cong, Tao; Sureshkumar, Radhakrishna

2013-01-01T23:59:59.000Z

206

Iron distribution in silicon after solar cell processing: Synchrotron analysis and predictive modeling  

E-Print Network [OSTI]

The evolution during silicon solar cell processing of performance-limiting iron impurities is investigated with synchrotron-based x-ray fluorescence microscopy. We find that during industrial phosphorus diffusion, bulk ...

Fenning, David P.

207

Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cells  

E-Print Network [OSTI]

In this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline silicon. We analyze a specially prepared solar cell with alternating ...

Bertoni, Mariana I.

208

Co-optimizing silicon solar cell processing for efficiency and throughput  

E-Print Network [OSTI]

Crystalline silicon solar cells are a proven renewable energy technology, but they have yet to reach low costs commensurate with subsidy-free, grid-scale adoption. To achieve the widespread adoption of photovoltaics, the ...

Morishige, Ashley E. (Ashley Elizabeth)

2013-01-01T23:59:59.000Z

209

Highly Ordered Vertical Silicon Nanowire Array Composite Thin Films for Thermoelectric Devices  

E-Print Network [OSTI]

Highly Ordered Vertical Silicon Nanowire Array Composite Thin Films for Thermoelectric Devices for thermoelectric devices are presented. Inter- ference lithography was used to pattern square lattice photoresist. The Si NW arrays were embedded in SOG to form a dense and robust composite material for device

Bowers, John

210

The electrical and optical properties of thin lm diamond implanted with silicon  

E-Print Network [OSTI]

:Si alloys were formed by the implantation of Si into polycrystalline diamond lms grown by che- mical vaporThe electrical and optical properties of thin lm diamond implanted with silicon K.J. Roea,* , J of diamond make it an attractive material for use in extreme conditions. Diamond devices have been fabricated

Kolodzey, James

211

THE ELECTRICAL AND OPTICAL PROPERTIES OF THIN FILM DIAMOND IMPLANTED WITH SILICON  

E-Print Network [OSTI]

devices. The C:Si alloys were formed by the implantation of Si into polycrystalline diamond films grownTHE ELECTRICAL AND OPTICAL PROPERTIES OF THIN FILM DIAMOND IMPLANTED WITH SILICON K. J. Roe and J and electrical properties of diamond make it an attractive material for use in extreme conditions. Diamond

Kolodzey, James

212

Silicon Solar Cells with Front Hetero-Contact and Aluminum Alloy Back Junction: Preprint  

SciTech Connect (OSTI)

We prototype an alternative n-type monocrystalline silicon (c-Si) solar cell structure that utilizes an n/i-type hydrogenated amorphous silicon (a-Si:H) front hetero-contact and a back p-n junction formed by alloying aluminum (Al) with the n-type Si wafer.

Yuan, H.-C.; Page, M. R.; Iwaniczko, E.; Xu, Y.; Roybal, L.; Wang, Q.; Branz, H. M.; Meier, D. L.

2008-05-01T23:59:59.000Z

213

Methods for fabricating thin film III-V compound solar cell  

DOE Patents [OSTI]

The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

2011-08-09T23:59:59.000Z

214

Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells  

SciTech Connect (OSTI)

Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ?1.55?nm, achieve the best carrier-selectivity producing a contact resistivity ?{sub c} of ?3 m? cm{sup 2} and a recombination current density J{sub 0c} of ?40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350?C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

Bullock, J., E-mail: james.bullock@anu.edu.au; Cuevas, A.; Yan, D. [Research School of Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Demaurex, B.; Hessler-Wyser, A.; De Wolf, S. [Ecole Polytechnique Fdrale de Lausanne (EPFL), Institute of Micro Engineering (IMT), Photovoltaics and Thin Film Electronic Laboratory PVLab, Maladire 71b, CH-200 Neuchtel (Switzerland)

2014-10-28T23:59:59.000Z

215

Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor  

E-Print Network [OSTI]

The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

Nominanda, Helinda

2004-01-01T23:59:59.000Z

216

FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS  

E-Print Network [OSTI]

FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS of Michigan, Ann Arbor, MI 48109, USA ABSTRACT Hydrogenated amorphous silicon (a-Si:H) single- junction solar). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains

Deng, Xunming

217

19.4% -EFFICIENT LARGE AREA REAR-PASSIVATED SCREEN-PRINTED SILICON SOLAR CELLS T. Dullweber*1  

E-Print Network [OSTI]

be reduced by applying the PERC (passivated emitter and rear cell) solar cell design [8]. The following19.4% -EFFICIENT LARGE AREA REAR-PASSIVATED SCREEN-PRINTED SILICON SOLAR CELLS T. Dullweber*1 , S% in the near future. Keywords: Silicon Solar Cell, Screen Printing, Rear Passivation 1 Introduction About 80

218

Impurity and back contact effects on CdTe/CdS thin film solar cells.  

E-Print Network [OSTI]

??CdTe/CdS thin film solar cells are the most promising cost-effective solar cells. The goal of this project is to improve the performance for CdS/CdTe devices (more)

Zhao, Hehong

2008-01-01T23:59:59.000Z

219

PROCEEDINGS O F THE IEEE, VOL.56, NO. 1, JANUARY196837 [`I J. J. Wysocki,"Lithium-doped radiation-resistant silicon solar  

E-Print Network [OSTI]

,"Lithium-doped radiation-resistant silicon solar cells," IEEE Trans. Nuclear Science. vol.NS-13, pp. 168-173, December 1966 damagein semiconductorsXI1: Effects ofhighenergy electrons in silicon and silicon solar cells," Contract NAS 5-3805, May 25, 1966. 14] R. V. Tauke, "Thermal annealing of irradiated n-on-p silicon solar cells

Teich, Malvin C.

220

See-through amorphous silicon solar cells with selectively transparent and conducting photonic crystal back reflectors for building integrated photovoltaics  

SciTech Connect (OSTI)

Thin semi-transparent hydrogenated amorphous silicon (a-Si:H) solar cells with selectively transparent and conducting photonic crystal (STCPC) back-reflectors are demonstrated. Short circuit current density of a 135?nm thick a-Si:H cell with a given STCPC back-reflector is enhanced by as much as 23% in comparison to a reference cell with an ITO film functioning as its rear contact. Concurrently, solar irradiance of 295?W/m{sup 2} and illuminance of 3480 lux are transmitted through the cell with a given STCPC back reflector under AM1.5 Global tilt illumination, indicating its utility as a source of space heating and lighting, respectively, in building integrated photovoltaic applications.

Yang, Yang [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada)] [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada); OBrien, Paul G. [Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada) [Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada); Materials Chemistry Research Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6 (Canada); Ozin, Geoffrey A., E-mail: gozin@chem.utoronto.ca, E-mail: kherani@ecf.utoronto.ca [Materials Chemistry Research Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6 (Canada); Kherani, Nazir P., E-mail: gozin@chem.utoronto.ca, E-mail: kherani@ecf.utoronto.ca [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada); Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada)

2013-11-25T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Amorphous silicon cell array powered solar tracking apparatus  

DOE Patents [OSTI]

An array of an even number of amorphous silicon solar cells are serially connected between first and second terminals of opposite polarity. The terminals are connected to one input terminal of a DC motor whose other input terminal is connected to the mid-cell of the serial array. Vane elements are adjacent the end cells to selectively shadow one or the other of the end cells when the array is oriented from a desired attitude relative to the sun. The shadowing of one cell of a group of cells on one side of the mid-cell reduces the power of that group substantially so that full power from the group of cells on the other side of the mid-cell drives the motor to reorient the array to the desired attitude. The cell groups each have a full power output at the power rating of the motor. When the array is at the desired attitude the power output of the two groups of cells balances due to their opposite polarity so that the motor remains unpowered.

Hanak, Joseph J. (Lawrenceville, NJ)

1985-01-01T23:59:59.000Z

222

Identification, Characterization, and Implications of Shadow Degradation in Thin Film Solar Cells  

E-Print Network [OSTI]

cells [4]. The problem of shadowing of solar panels has been studied for quite some time; however of a solar cell, showing the dark and light current components. (b) The series connection in a solar panelIdentification, Characterization, and Implications of Shadow Degradation in Thin Film Solar Cells

Alam, Muhammad A.

223

CARRIER COLLECTION IN THIN-FILM CDTE SOLAR CELLS: THEORY AND EXPERIMENT  

E-Print Network [OSTI]

-n junction solar cell theory predicts that the total solar cell current in the light, JLCARRIER COLLECTION IN THIN-FILM CDTE SOLAR CELLS: THEORY AND EXPERIMENT A.E. Delahoy, Z. Cheng and K.K. Chin Department of Physics, Apollo Solar Energy Research Center, New Jersey Institute

224

1. INTRODUCTION Polycrystalline CdTe thin films solar cells have shown long  

E-Print Network [OSTI]

to the solar panel that can be adapted to any kind of shape and is easy to deploy in space. We have developed1. INTRODUCTION Polycrystalline CdTe thin films solar cells have shown long term stable performance for the solar cell, therefore high specific power (ratio of out- put power to the weight) solar cells

Romeo, Alessandro

225

Silicon heterojunction solar cell with passivated hole selective MoO{sub x} contact  

SciTech Connect (OSTI)

We explore substoichiometric molybdenum trioxide (MoO{sub x}, x?silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711?mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoO{sub x}, we observe a substantial gain in photocurrent of 1.9?mA/cm{sup 2} in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.

Battaglia, Corsin; Yin, Xingtian; Zheng, Maxwell; Javey, Ali, E-mail: ajavey@eecs.berkeley.edu [Electrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Martn de Nicols, Silvia; De Wolf, Stefaan; Ballif, Christophe [Photovoltaics and Thin Film Electronics Laboratory, Ecole Polytechnique Fdrale de Lausanne, 2000 Neuchtel (Switzerland)

2014-03-17T23:59:59.000Z

226

Comparison of electronic structure of as grown and solar grade silicon samples  

SciTech Connect (OSTI)

A comparison of the electronic structure of two different types of silicon materials viz., (i) as grown silicon and (ii) solar silicon has been carried out utilizing maximum entropy method and pair distribution function using powder X-ray data sets. The precise electron density maps have been elucidated for the two samples. The covalent nature of the bonding between atoms in both the samples is found to be well pronounced and clearly seen from the electron density maps. The electron densities at the middle of the Si-Si bond are found to be 0.47 and 0.45 e/A{sup 3} for as grown silicon and solar silicon respectively. In this work, the local structural information has also been obtained by analyzing the atomic pair distribution functions of these two samples.

Saravanan, R., E-mail: saragow@dataone.in; Sheeba, R. A. J. R. [Madura College, Research Centre and PG Department of Physics (India)

2012-04-15T23:59:59.000Z

227

Nanoscale photon management in silicon solar cells Sangmoo Jeong, Shuang Wang, and Yi Cui  

E-Print Network [OSTI]

benefits. For power generation, low-cost fossil fuel has, however, been pre- ferred to renewable energy and wind, can be accessed easily in most of the world. In particular, the solar energy deliveredNanoscale photon management in silicon solar cells Sangmoo Jeong, Shuang Wang, and Yi Cui Citation

Cui, Yi

228

Atomic Structure of Interface States in Silicon Heterojunction Solar Cells B. M. George,1  

E-Print Network [OSTI]

silicon (a-Si:H=c-Si) heterojunction solar cells. We find that (i) the interface exhibits microscopic identify the microscopic origin of the conduction band tail state in the a-Si:H layer, and (iv) present-efficiency solar cells, is formed at the a-Si: H=c-Si interface [8]. Here, similar to other crystalline- amorphous

Schmidt, Wolf Gero

229

A FREEWARE 1D EMITTER MODEL FOR SILICON SOLAR CELLS Keith R. McIntosh  

E-Print Network [OSTI]

Centre for Sustainable Energy Systems, Australian National University, Canberra, ACT 0200, AUSTRALIA 2 Leibniz University of Hannover, Inst. of Solid-State Physics, Dep. Solar Energy, Appelstrasse 2, 30167A FREEWARE 1D EMITTER MODEL FOR SILICON SOLAR CELLS Keith R. McIntosh 1 and Pietro P. Altermatt 2 1

230

Supporting Information Absorption of Light in a Single-Nanowire Silicon Solar  

E-Print Network [OSTI]

1 Supporting Information Absorption of Light in a Single-Nanowire Silicon Solar Cell Decorated_yang@berkeley.edu. #12;2 Fabrication of the suspended single-nanowire solar cells Trench substrates were fabricated from of a quartz tube in a tube furnace. Reactions to grow wires bridging the trenches lasted from 15 to 45 mins

Yang, Peidong

231

Polyx multicrystalline silicon solar cells processed by PF+5 unanalysed ion implantation and rapid thermal annealing  

E-Print Network [OSTI]

of terrestrial solar cells as compared to classical furnace or pulsed laser annealing. Unfortunately, drawbacks695 Polyx multicrystalline silicon solar cells processed by PF+5 unanalysed ion implantation with classical furnace annealing or with classical diffusion process. Revue Phys. Appl. 22 (1987) 695-700 JUILLET

Paris-Sud XI, Université de

232

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

SciTech Connect (OSTI)

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

233

E-Print Network 3.0 - analyzing solar reflective Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Market Studies Collection: Power Transmission, Distribution and Plants 3 SIMULATION OF LIGHT IN-COUPLING AT OBLIQUE ANGLES IN THIN-FILM SILICON SOLAR CELLS Summary: roughness in...

234

Device physics and characterization of silicon point-contact solar cells  

SciTech Connect (OSTI)

The silicon point-contact solar cell is a candidate solar cell for use in highly concentrated sunlight. Recent progress is described for a point-contact solar cell optimized for incident power densities of 36 Watts/cm/sup 2/. The design and fabrication for several device runs is discussed in detail. Extensive data from these solar cells is presented in order to display the major trends in device design and performance. The data culminate in a solar cell that is 28% efficient for incident power densities between 4 and 15 watts/cm/sup 2/ at 25/sup 0/C. Utilizing measurements from several runs of solar cells, a three-dimensional model is compared to the data in order to establish a strong baseline case from which future design enhancements can be evaluated. A modeling study of the optimum geometries for point-contact solar cells provides the context for a discussion of the device physics of the solar-cell operation. These studies indicate that efficiencies exceeding 30% may soon be attained. The ultimate efficiency of silicon solar cells will be limited parasitic Auger recombination. With the model, a device is optimized to measure the carrier lifetimes in highly-injected silicon in the carrier density range of interest for solar cell operation, 1 X 10/sup 15/ to 2 x 10/sup 17/ carriers/cm/sup 2/.

Sinton, R.A.

1987-01-01T23:59:59.000Z

235

Study of the recombination on silicon micropillar solar cells by impedance spectroscopy  

E-Print Network [OSTI]

Study of the recombination on silicon micropillar solar cells by impedance spectroscopy Armand Equivalent circuit of a solar cell in AC mode In alternative current, a solar cell can be modelled as: · RP IV curve For small amplitude sine waves: I = dI dE E0,I0 ? E + 1 2 d2I dE2 E0,I0 ? E2 + ... dI dE E0

Candea, George

236

Fatigue failure in thin-film polycrystalline silicon is due to subcritical cracking within the oxide layer  

E-Print Network [OSTI]

Fatigue failure in thin-film polycrystalline silicon is due to subcritical cracking within with stress-induced surface oxide thicken- ing and moisture-assisted subcritical cracking in the amor- phous

Ritchie, Robert

237

Analysis of copper-rich precipitates in silicon: chemical state,gettering, and impact on multicrystalline silicon solar cellmaterial  

SciTech Connect (OSTI)

In this study, synchrotron-based x-ray absorption microspectroscopy (mu-XAS) is applied to identifying the chemical states of copper-rich clusters within a variety of silicon materials, including as-grown cast multicrystalline silicon solar cell material with high oxygen concentration and other silicon materials with varying degrees of oxygen concentration and copper contamination pathways. In all samples, copper silicide (Cu3Si) is the only phase of copper identified. It is noted from thermodynamic considerations that unlike certain metal species, copper tends to form a silicide and not an oxidized compound because of the strong silicon-oxygen bonding energy; consequently the likelihood of encountering an oxidized copper particle in silicon is small, in agreement with experimental data. In light of these results, the effectiveness of aluminum gettering for the removal of copper from bulk silicon is quantified via x-ray fluorescence microscopy (mu-XRF),and a segregation coefficient is determined from experimental data to beat least (1-2)'103. Additionally, mu-XAS data directly demonstrates that the segregation mechanism of Cu in Al is the higher solubility of Cu in the liquid phase. In light of these results, possible limitations for the complete removal of Cu from bulk mc-Si are discussed.

Buonassisi, Tonio; Marcus, Matthew A.; Istratov, Andrei A.; Heuer, Matthias; Ciszek, Theodore F.; Lai, Barry; Cai, Zhonghou; Weber,Eicke R.

2004-11-08T23:59:59.000Z

238

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network [OSTI]

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

239

Nano-photonic Light Trapping In Thin Film Solar Dennis M. Callahan Jr.  

E-Print Network [OSTI]

Nano-photonic Light Trapping In Thin Film Solar Cells Thesis by Dennis M. Callahan Jr. In Partial. Jeremy Munday for helping me get started on the thin-film GaAs project and for all the time we spent to thank Dr. Jonathan Grandidier for working closely with me for a couple years on the nano sphere solar

Winfree, Erik

240

Method of fabrication of display pixels driven by silicon thin film transistors  

DOE Patents [OSTI]

Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200.degree. C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA)

1999-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD  

SciTech Connect (OSTI)

An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed increase in the optical bandgap of a-Si:H films close to the a-Si:H/cSi interface.

Abdulraheem, Yaser, E-mail: yaser.abdulraheem@kuniv.edu.kw [Electrical Engineering Department, College of Engineering and Petroleum, Kuwait University. P.O. Box 5969, 13060 Safat (Kuwait); Gordon, Ivan; Bearda, Twan; Meddeb, Hosny; Poortmans, Jozef [IMEC, Kapeldreef 75, 3001, Leuven (Belgium)

2014-05-15T23:59:59.000Z

242

Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications  

SciTech Connect (OSTI)

Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

Mouro, J.; Gualdino, A.; Chu, V. [Instituto de Engenharia de Sistemas e Computadores Microsistemas e Nanotecnologias (INESC-MN) and IN Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Conde, J. P. [Instituto de Engenharia de Sistemas e Computadores Microsistemas e Nanotecnologias (INESC-MN) and IN Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Department of Bioengineering, Instituto Superior Tcnico (IST), 1049-001 Lisbon (Portugal)

2013-11-14T23:59:59.000Z

243

Novel Approach for Selective Emitter Formation and Front Side Metallization of Crystalline Silicon Solar Cells  

SciTech Connect (OSTI)

In this project we will explore the possibility of forming the front side metallization and selective emitter layer for the crystalline silicon solar cells through using selective laser ablation to create contact openings on the front surface and a screen printer to make connections with conductive paste. Using this novel approach we expect to reduce the specific contact resistance of the silver gridlines by about one order of magnitude compared to the state-of-art industrial crystalline silicon solar cells to below 1 m??cm2, and use lightly doped n+ emitter layer with sheet resistance of not smaller than 100 ?/?. This represents an enabling improvement on crystalline silicon solar cell performance and can increase the absolute efficiency of the solar cell by about 1%. In this scientific report we first present our result on the selective laser ablation of the nitride layer to make contact openings. Then we report our work on the solar cell fabrication by using the laser ablated contact openings with self-doping paste. Through various electrical property characterization and SIMS analysis, the factors limiting the cell performance have been discussed. While through this proof-of-concept project we could not reach the target on cell efficiency improvement, the process to fabricate 125mm full-sized silicon solar cells using laser ablation and self-doping paste has been developed, and a much better understanding of technical challenges has been achieved. Future direction to realize the potential of the new technology has been clearly defined.

Baomin Xu

2010-07-28T23:59:59.000Z

244

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network [OSTI]

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

245

Enhancement of optical absorption in thin-film organic solar cells through the excitation of plasmonic modes in metallic gratings  

E-Print Network [OSTI]

Enhancement of optical absorption in thin-film organic solar cells through the excitation 2010 We theoretically investigate the enhancement of optical absorption in thin-film organic solar.1063/1.3377791 Thin-film organic solar cells OSCs are a promising candidate for low-cost energy conversion.1­6 However

Veronis, Georgios

246

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network [OSTI]

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells Company has had a conti- nuous effort on thin film solar cells for the past four and a half years

Paris-Sud XI, Université de

247

Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High efficiency and junction property  

E-Print Network [OSTI]

Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High-conductor-free organic lead iodide thin film solar cells have been fabricated with a sequential deposition method are comparable to that of the high-efficiency thin-film solar cells. VC 2014 AIP Publishing LLC. [http

Wang, Wei Hua

248

Decoupling bulk- and surface-limited lifetimes in thin kerfless silicon wafers using spectrally resolved transient absorption pump-probe spectroscopy and computer simulations  

E-Print Network [OSTI]

One of the key technological objectives to further decrease the cost of silicon (Si) PV and enable manufacturing of crystalline silicon is to improve the quality of thin, kerfless Si wafers to monocrystalline equivalent. ...

Siah, Sin Cheng

2013-01-01T23:59:59.000Z

249

Near perfect solar absorption in ultra-thin-film GaAs photonic crystals  

E-Print Network [OSTI]

Near perfect solar absorption in ultra-thin-film GaAs photonic crystals Sergey Eyderman,*a Alexei Deinegaa and Sajeev Johnab We present designs that enable a significant increase of solar absorption­99.5% solar absorption is demonstrated depending on the photonic crystal architecture used and the nature

John, Sajeev

250

How much can guided modes enhance absorption in thin solar cells?  

E-Print Network [OSTI]

How much can guided modes enhance absorption in thin solar cells? Peter N. Saeta,1,2 Vivian E-backed solar cells caused by dipole scatterers embedded in the absorbing layer is studied using a semi limit of efficiency of p-n junction solar cells," J. Appl. Phys. 32, 510519 (1961). 2. C. H. Henry

Atwater, Harry

251

Fundamental understanding and development of low-cost, high-efficiency silicon solar cells  

SciTech Connect (OSTI)

The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

ROHATGI,A.; NARASIMHA,S.; MOSCHER,J.; EBONG,A.; KAMRA,S.; KRYGOWSKI,T.; DOSHI,P.; RISTOW,A.; YELUNDUR,V.; RUBY,DOUGLAS S.

2000-05-01T23:59:59.000Z

252

NREL scientists develop near-field optical microscopy techniques for imaging solar cell junctions and identify  

E-Print Network [OSTI]

and Characterization team examined local junction breakdown in silicon and thin-film solar cells by electroluminescenceNREL scientists develop near-field optical microscopy techniques for imaging solar cell junctions is an increasingly important issue for silicon solar cells. The issue has taken center stage now that the solar

253

Rapid Deposition Technology Holds the Key for the World's Largest Manufacturer of Thin-Film Solar Modules (Fact Sheet)  

SciTech Connect (OSTI)

First Solar, Inc. has been collaborating with NREL since 1991, advancing its thin-film cadmium telluride solar technology to grow from a startup company to become one of the world's largest manufacturers of solar modules, and the world's largest manufacturer of thin-film solar modules.

Not Available

2013-08-01T23:59:59.000Z

254

The 22nd International Photovoltaic Science and Engineering Conference, November 05-09, 2012, Hangzhou, China Gettering of n-type multicrystalline silicon solar cells by  

E-Print Network [OSTI]

, Hangzhou, China Gettering of n-type multicrystalline silicon solar cells by phosphorus diffusion, boron in heavily dislocated regions. 1. INTRODUCTION N-type multicrystalline silicon has great potential as solar+ diffused region in n- type silicon solar cells with either aluminum annealing or boron diffusion are good

255

Reproduced with pennission from Elsevier Solar CelLS',30 (1991) 515-523 515'f'  

E-Print Network [OSTI]

emerged since the early 1980s. In particular, thin film solar cell technologies such as amorphous silicon To investigate the implications of projected advances in thin film solar cells for PV hydrogen production, we set). A large (> 10 MW) tilted, fixed, flat plate PV array using thin film solar modules is coupled directly

256

Influence of the pattern shape on the photonic efficiency of front-side periodically patterned ultrathin crystalline silicon solar cells  

E-Print Network [OSTI]

Patterning the front side of an ultra-thin crystalline silicon (c Si) solar cell helps keeping the energy conversion efficiency high by compensating for the light absorption losses. A super-Gaussian mathematical expression was used in order to encompass a large variety of nanopattern shapes and to study their influence on the photonic performance. We prove that the enhancement in the maximum achievable photo-current is due to both impedance matching condition at short wavelengths and to the wave nature of light at longer wavelengths. We show that the optimal mathematical shape and parameters of the pattern depend on the c Si thickness. An optimal shape comes with a broad optimal parameter zone where fabricating errors would have much less influence on the efficiency. We prove that cylinders are not the best suited shape. To compare our model with a real slab, we fabricated a nanopatterned c Si slab via Nano Imprint Lithography.

Herman, Aline; Depauw, Valerie; Daif, Ounsi El; Deparis, Olivier

2012-01-01T23:59:59.000Z

257

Development of Novel Front Contract Pastes for Crystalline Silicon Solar Cells  

SciTech Connect (OSTI)

In order to improve the efficiencies of silicon solar cells, paste to silicon contact formation mechanisms must be more thoroughly understood as a function of paste chemistry, wafer properties and firing conditions. Ferro Corporation has been involved in paste development for over 30 years and has extensive expertise in glass and paste formulations. This project has focused on the characterization of the interface between the top contact material (silver paste) and the underlying silicon wafer. It is believed that the interface between the front contact silver and the silicon wafer plays a dominant role in the electrical performance of the solar cell. Development of an improved front contact microstructure depends on the paste chemistry, paste interaction with the SiNx, and silicon (Si) substrate, silicon sheet resistivity, and the firing profile. Typical front contact ink contains silver metal powders and flakes, glass powder and other inorganic additives suspended in an organic medium of resin and solvent. During fast firing cycles glass melts, wets, corrodes the SiNx layer, and then interacts with underlying Si. Glass chemistry is also a critical factor in the development of an optimum front contact microstructure. Over the course of this project, several fundamental characteristics of the Ag/Si interface were documented, including a higher-than-expected distribution of voids along the interface, which could significantly impact electrical conductivity. Several techniques were also investigated for the interfacial analysis, including STEM, EDS, FIB, EBSD, and ellipsometry.

Duty, C.; Jellison, D. G.E. P.; Joshi, P.

2012-04-05T23:59:59.000Z

258

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa  

E-Print Network [OSTI]

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa , Alessio in the fabrication of high efficiency CdTe/CdS thin film solar cells. Usually, it is done first by etching the Cd: Back Contact, CdTe, Thin Film 1 INTRODUCTION The back contact in the CdTe/CdS thin film solar cell

Romeo, Alessandro

259

Silicon Ink Technology Offers Path to Higher Efficiency Solar...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

startup companies cross technological barriers to commercialization while encouraging private investment. The Solar Energy Technologies Office (SETO) focuses on achieving the...

260

Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias  

DOE Patents [OSTI]

Methods of manufacturing back-contacted silicon solar cells fabricated using a gradient-driven solute transport process, such as thermomigration or electromigration, to create n-type conductive vias connecting the n-type emitter layer on the front side to n-type ohmic contacts located on the back side.

Gee, James M; Schmit, Russell R.

2007-01-30T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Hole Selective MoOx Contact for Silicon Solar Cells Corsin Battaglia,,,  

E-Print Network [OSTI]

Hole Selective MoOx Contact for Silicon Solar Cells Corsin Battaglia,,, Xingtian Yin,,,§, Maxwell, University of California, Berkeley, California 94720, United States Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States § Electronic Materials Research

Javey, Ali

262

High Efficiency Thin Film CdTe and a-Si Based Solar Cells Final Technical Report for the Period  

E-Print Network [OSTI]

High Efficiency Thin Film CdTe and a-Si Based Solar Cells Final Technical Report for the PeriodTe-based thin-film solar cells and on high efficiency a-Si-based thin-film solar cells. Phases I and II have the performance of a-SiGe solar cells and properties of a-SiGe single layer films with different Ge contents

Deng, Xunming

263

Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics  

E-Print Network [OSTI]

CuIn(Se,S) 2 solar cell with a PCE of 11.1% under dark andpower conversion efficiency (PCE) of around 20% among thinAchievement of such high PCE can be largely ascribed to the

Chung, Choong-Heui

2012-01-01T23:59:59.000Z

264

Electron-reflector strategy for CdTe thin-film solar cells.  

E-Print Network [OSTI]

??The CdTe thin-film solar cell has a large absorption coefficient and high theoretical efficiency. Moreover, large-area photovoltaic panels can be economically fabricated. These features potentially (more)

Hsiao, Kuo-Jui

2010-01-01T23:59:59.000Z

265

Approaches to fabricating high-efficiency ultra-thin CdTe solar cells.  

E-Print Network [OSTI]

??This thesis is an investigation of the fabrication, characterization and performance of high-efficiency and ultra-thin CdTe solar cells with an aim of reducing the material (more)

Xia, Wei (1981 - )

2013-01-01T23:59:59.000Z

266

Earth abundant materials for high efficiency heterojunction thin film solar cells  

E-Print Network [OSTI]

We investigate earth abundant materials for thin-film solar cells that can meet tens of terawatts level deployment potential. Candidate materials are identified by combinatorial search, large-scale electronic structure ...

Buonassisi, Tonio

267

Technological assessment of light-trapping technology for thin-film Si solar cell  

E-Print Network [OSTI]

The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was analyzed from the technology, market, and ...

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

268

Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer  

E-Print Network [OSTI]

Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric current gain obtained...

Lu, Tianlin

2012-07-16T23:59:59.000Z

269

Process and apparatus for casting multiple silicon wafer articles  

DOE Patents [OSTI]

Method and apparatus of casting silicon produced by the reaction between SiF.sub.4 and an alkaline earth metal into thin wafer-shaped articles suitable for solar cell fabrication.

Nanis, Leonard (Palo Alto, CA)

1992-05-05T23:59:59.000Z

270

Enhanced performance of solar cells with optimized surface recombination and efficient photon capturing via anisotropic-etching of black silicon  

SciTech Connect (OSTI)

We report an enhanced conversion efficiency of femtosecond-laser treated silicon solar cells by surface modification of anisotropic-etching. The etching improves minority carrier lifetime inside modified black silicon area substantially; moreover, after the etching, an inverted pyramids/upright pyramids mixed texture surface is obtained, which shows better photon capturing capability than that of conventional pyramid texture. Combing of these two merits, the reformed solar cells show higher conversion efficiency than that of conventional pyramid textured cells. This work presents a way for fabricating high performance silicon solar cells, which can be easily applied to mass-production.

Chen, H. Y.; Peng, Y., E-mail: gdyuan@semi.ac.cn, E-mail: py@usst.edu.cn; Hong, M.; Zhang, Y. B.; Cai, Bin; Zhu, Y. M. [Shanghai Key Lab of Modern Optical System and Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai 200093 (China); Yuan, G. D., E-mail: gdyuan@semi.ac.cn, E-mail: py@usst.edu.cn; Zhang, Y.; Liu, Z. Q.; Wang, J. X.; Li, J. M. [Semiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2014-05-12T23:59:59.000Z

271

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY  

E-Print Network [OSTI]

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION, A. N. Tiwari Thin Film Physics Group, Laboratory for Solid State Physics, Technopark ETH-Building, Technoparkstr. 1, CH-8005 Zurich, Switzerland ABSTRACT: CdTe/CdS thin £lm solar cells have been grown by closed

Romeo, Alessandro

272

Journal of Crystal Growth 241 (2002) 4550 Boron doping of silicon layers grown by liquid phase epitaxy  

E-Print Network [OSTI]

Energy Systems, Department of Engineering, Australian National University, Acton, 0200, Australia film solar cell applications as it allows the growth of a back surface field and a lightly doped bulk; B1. Boron; B1. Silicon; B3. Solar cells 1. Introduction Thin film silicon solar cells

273

In-Line Crack and Stress Detection in Silicon Solar Cells Using Resonance Ultrasonic Vibrations  

SciTech Connect (OSTI)

Statement of Problem and Objectives. Wafer breakage in automated solar cell production lines is identified as a major technical problem and a barrier for further cost reduction of silicon solar module manufacturing. To the best of our knowledge, there are no commercial systems addressing critical needs for in-line inspection of the mechanical quality of solar wafers and cells. The principal objective of the SBIR program is to validate through experiments and computer modeling the applicability of the Resonance Ultrasonic Vibrations system, which ultimately can be used as a real-time in-line manufacturing quality control tool for fast detection of mechanically unstable silicon solar cells caused by cracks. The specific objective of Phase II is to move the technology of in-line crack detection from the laboratory level to commercial demonstration through development of a system prototype. The fragility of silicon wafers possessing low mechanical strength is attributed to peripheral and bulk millimeter-length cracks. The research program is based on feasibility results obtained during Phase I, which established that: (i) the Resonance Ultrasonic Vibrations method is applicable to as-cut, processed wafers and finished cells; (ii) the method sensitivity depends on the specific processing step; it is highest in as-cut wafers and lowest in wafers with metallization pattern and grid contacts; (iii) the system is capable of matching the 2.0 seconds per wafer throughput rate of state-of-art solar cell production lines; (iv) finite element modeling provides vibration mode analysis along with peak shift versus crack length and crack location dependence; (v) a high 91% crack rejection rate was confirmed through experimentation and statistical analysis. The Phase II project has the following specific tasks: (i) specify optimal configurations of the in-line system?¢????s component hardware and software; (ii) develop and justify a system prototype that meets major specifications for an in-line crack detection unit, such as high throughput rate, high level of stability, reproducibility of data acquisition and analysis, and high sensitivity with respect to crack length and crack location; (iii) design a system platform that allows easy integration within and adaptation to various solar cell belt-type production lines; (iv) develop a testing protocol providing quality certification of the production-grade system. Commercial Application of the proposed activity consists of bringing to the solar market a new high-tech product based on an innovative solution and patented methodology to contribute to cost reduction of silicon solar module production. The solar industry, with crystalline silicon as a dominant segment, shows outstanding performance, with approximately 25% yearly growth during the last years. Despite a slowdown with only 5.6 GW installations in 2009, solar module production for the 2010 and 2011 years was recovered. According to European Photonics Industry Consortium new solar PV installations grow by 56% compared to 2010 reached 64.7 GW in 2011. Revenues in the PV industry reached a record high of $93 billion in 2011, a 13.4 percent gain over 2010 â?? and 150 percent over 2009. This growth was forecasted to continue in 2013 with double digits growth. The solar industry is economically driven to make solar panels of the highest conversion efficiency and reliability at the lowest production cost. The Resonance Ultrasonic Vibration system addresses critical needs of the silicon-based solar industry by providing a quality control method and tool, which will improve productivity, increase reliability of products and reduce manufacturing cost of solar panels.

Ostapenko, Sergei

2013-04-03T23:59:59.000Z

274

14th Workshop on Crystalline Silicon Solar Cells& Modules: Materials and Processes; Summary of Discussion Sessions  

SciTech Connect (OSTI)

The 14th Workshop discussion sessions addressed funding needs for Si research and for R&D to enhance U.S. PV manufacturing. The wrap-up session specifically addressed topics for the new university silicon program. The theme of the workshop, Crystalline Silicon Solar Cells: Leapfrogging the Barriers, was selected to reflect the astounding progress in Si PV technology during last three decades, despite a host of barriers and bottlenecks. A combination of oral, poster, and discussion sessions addressed recent advances in crystal growth technology, new cell structures and doping methods, silicon feedstock issues, hydrogen passivation and fire through metallization, and module issues/reliability. The following oral/discussion sessions were conducted: (1) Technology Update; (2) Defects and Impurities in Si/Discussion; (3) Rump Session; (4) Module Issues and Reliability/Discussion; (5) Silicon Feedstock/Discussion; (6) Novel Doping, Cells, and Hetero-Structure Designs/Discussion; (7) Metallization/Silicon Nitride Processing/Discussion; (8) Hydrogen Passivation/Discussion; (9) Characterization/Discussion; and (10) Wrap-Up. This year's workshop lasted three and a half days and, for the first time, included a session on Si modules. A rump session was held on the evening of August 8, which addressed efficiency expectations and challenges of c Si solar cells/modules. Richard King of DOE and Daren Dance of Wright Williams& Kelly (formerly of Sematech) spoke at two of the luncheon sessions. Eleven students received Graduate Student Awards from funds contributed by the PV industry.

Sopori, B.; Tan, T.; Sinton, R.; Swanson, D.

2004-10-01T23:59:59.000Z

275

Rapid Thermal Processing of High Efficiency n-Type Silicon Solar Cells with Al Back Junction  

SciTech Connect (OSTI)

In this paper we report on the design, fabrication and modeling of 49 cm{sup 2}, 200-{micro}m thick, 1-5 {Omega}-cm, n- and p-type <111> and <100> screen-printed silicon solar cells. A simple process involving RTP front surface phosphorus diffusion, low frequency PECVD silicon nitride deposition, screen-printing of Al metal and Ag front grid followed by co-firing of front and back contacts produced cell efficiencies of 15.4% on n-type <111> Si, 15.1% on n-type <100> Si, 15.8% on p-type <111> Si and 16.1% on p-type <100> Si. Open circuit voltage was comparable for n and p type cells and was also independent of wafer orientation. High fill factor values (0.771-0.783) for all the devices ruled out appreciable shunting which has been a problem for the development of co-fired n-type <100> silicon solar cells with Al back junction. Model calculations were performed using PC1D to support the experimental results and provide guidelines for achieving >17% n-type silicon solar cells by rapid firing of Al back junction.

Ebong, A.; Upadhyaya, V.; Rounsaville, B.; Kim, D. S.; Meemongkolkiat, V.; Rohatgi, A.; Al-Jassim, M. M.; Jones, K. M.; To, B.

2006-01-01T23:59:59.000Z

276

DISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

-scale problems such as energy demand, pollution, and environment safety. The cost ($/kWh) is the primaryDISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS AND MODULES WITH 2-D-FILM SOLAR CELLS AND MODULES WITH 2-D SIMULATIONS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS

Sites, James R.

277

innovati nNREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells  

E-Print Network [OSTI]

. Low-bandgap cells can lose 25% of their power output and efficiency ratings as solar cell operating energy output than a low-bandgap cell with the same wattage or power rating. NREL is a nationalinnovati nNREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells Researchers

278

NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)  

SciTech Connect (OSTI)

Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

Not Available

2012-09-01T23:59:59.000Z

279

High-temperature defect engineering for silicon solar cells : predictive process simulation and synchrotron-based microcharacterization  

E-Print Network [OSTI]

Efficiency is a major lever for cost reduction in crystalline silicon solar cells, which dominate the photovoltaics market but cannot yet compete subsidy-free in most areas. Iron impurities are a key performance-limiting ...

Fenning, David P

2013-01-01T23:59:59.000Z

280

Enhanced Efficiency of Light-Trapping Nanoantenna Arrays for Thin Film Solar Cells  

E-Print Network [OSTI]

We suggest a novel concept of efficient light-trapping structures for thin-film solar cells based on arrays of planar nanoantennas operating far from plasmonic resonances. The operation principle of our structures relies on the excitation of chessboard-like collective modes of the nanoantenna arrays with the field localized between the neighboring metal elements. We demonstrated theoretically substantial enhancement of solar-cell short-circuit current by the designed light-trapping structure in the whole spectrum range of the solar-cell operation compared to conventional structures employing anti-reflecting coating. Our approach provides a general background for a design of different types of efficient broadband light-trapping structures for thin-film solar-cell technologically compatible with large-area thin-film fabrication techniques.

Simovski, Constantin R; Voroshilov, Pavel M; Guzhva, Michael E; Belov, Pavel A; Kivshar, Yuri S

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

HIGH-EFFICIENCY BACK-JUNCTION SILICON SOLAR CELL WITH AN IN-LINE EVAPORATED ALUMINUM FRONT GRID  

E-Print Network [OSTI]

HIGH-EFFICIENCY BACK-JUNCTION SILICON SOLAR CELL WITH AN IN-LINE EVAPORATED ALUMINUM FRONT GRID M-diffused back-junction emitter. The aluminum front side grid is evaporated in an industrial-type in-thick silicon shadow masks for the in-line evaporation of the aluminum front grid. The masks are fabricated

282

The effect of encapsulation on the reflectance of photovoltaic modules using textured multicrystalline-silicon solar cells  

SciTech Connect (OSTI)

Texturing multicrystalline-silicon cells is a promising technique for reducing reflectance losses. We investigated two methods for texturing multicrystalline-silicon solar cells - anisotropic chemical etch and mechanical dicing saw. Our work emphasized reducing reflectance in the encapsulated module by using optical confinement in the module. We found that optical confinement in the module is very important in the optimization of texture geometries.

Gee, J.M.; Schubert, W.K.; Tardy, H.L.; Hund, T.D. [Sandia National Labs., Albuquerque, NM (United States); Robison, G. [Semiconductor Assembly Network, Prescott Valley, AZ (United States)

1995-01-01T23:59:59.000Z

283

Low work function, stable thin films  

DOE Patents [OSTI]

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

2000-01-01T23:59:59.000Z

284

A study of laser annealing effects in boron ion implanted polycrystalline silicon films  

E-Print Network [OSTI]

, large-grain polycrysta11ine silicon has potential use for large volume production of low cost solar cells [1-3] . Polycrystalline silicon is easy to prepare and is compa- tible with monolithic silicon integrated circuit technology; however... of 2O pico second [5]. The MOSFET's fabricated to date on thin films of polycrystalline silicon have also exhibited poor transconductance [5J. It has been reported that the electrical properties of ion implanted polycrystalline silicon can...

Suh, Inhak Harry

1982-01-01T23:59:59.000Z

285

Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon  

DOE Patents [OSTI]

A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby the amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenation can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

Kaschmitter, J.L.; Sigmon, T.W.

1995-10-10T23:59:59.000Z

286

Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes; Summary Discussion Sessions  

SciTech Connect (OSTI)

This report is a summary of the panel discussions included with the Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme of the workshop was ''Supporting the Transition to World Class Manufacturing.'' This workshop provided a forum for an informal exchange of information between researchers in the photovoltaic and nonphotovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helped establish a knowledge base that can be used for improving device-fabrication processes to enhance solar-cell performance and reduce cell costs. It also provided an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research.

Sopori, B.; Swanson, D.; Sinton, R.; Stavola, M.; Tan, T.

1998-12-08T23:59:59.000Z

287

Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon  

DOE Patents [OSTI]

A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby to amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenization can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

Kaschmitter, James L. (Pleasanton, CA); Sigmon, Thomas W. (Beaverton, OR)

1995-01-01T23:59:59.000Z

288

Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process  

DOE Patents [OSTI]

A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas. 5 figs.

Ruby, D.S.; Schubert, W.K.; Gee, J.M.

1999-02-16T23:59:59.000Z

289

Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process  

DOE Patents [OSTI]

A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas.

Ruby, Douglas S. (Albuquerque, NM); Schubert, William K. (Albuquerque, NM); Gee, James M. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

290

Present status and future prospects of electro-magnetic casting for silicon solar cells  

SciTech Connect (OSTI)

The development research of Electro-Magnetic Casting (EMC) for silicon crystal manufacturing technology has been carried out for years with the purpose of providing low cost multicrystalline silicon substrate for solar cells. The EMC technology is a new concept, in which electromagnetic force is utilized to suspend molten metal without contact to crucible wall for melting and solidification of silicon material. At present, the research has been carried out for the development of casting technique with an ingot size of 22 x 22 cm{sup 2} cross section, and the furnace construction for producing a 35 x 35 cm{sup 2} cross sectioned ingot has been begun. Solar cell conversion efficiencies using EMC ingot crystals are ranging from 13--14% at the present, and the quality of EMC material reaches within that of conventional mold casting material. By the improvements of higher casting speed, higher material quality and larger ingot size at the EMC technology, it is expected that a new casting technique for lower cost ingot production will be realized. The paper describes the features of EMC technology, the silicon EMC furnace, crystalline properties of EMC ingots, electric power consumption of EMC, and cost comparison of the EMC and Czychralski pulling methods.

Kaneko, Kyojiro; Kawamura, Ritsuo; Misawa, Teruoki [Sumitomo SiTiX Corp., Amagasaki, Hyogo (Japan). Research and Development Center

1994-12-31T23:59:59.000Z

291

17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings  

SciTech Connect (OSTI)

The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

Sopori, B. L.

2007-08-01T23:59:59.000Z

292

Low temperature front surface passivation of interdigitated back contact silicon heterojunction solar cell  

SciTech Connect (OSTI)

The interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell requires a low temperature front surface passivation/anti-reflection structure. Conventional silicon surface passivation using SiO2 or a-SiNx is performed at temperature higher than 400C, which is not suitable for the IBC-SHJ cell. In this paper, we propose a PECVD a-Si:H/a-SiNx:H/a-SiC:H stack structure to passivate the front surface of crystalline silicon at low temperature. The optical properties and passivation quality of this structure are characterized and solar cells using this structure are fabricated. With 2 nm a-Si:H layer, the stack structure exhibits stable passivation with effective minority carrier lifetime higher than 2 ms, and compatible with IBC-SHJ solar cell processing. A critical advantage of this structure is that the SiC allows it to be HF resistant, thus it can be deposited as the first step in the process. This protects the a-Si/c-Si interface and maintains a low surface recombination velocity.

Shu, Brent; Das, Ujjwal; Jani, Omkar; Hegedus, Steve; Birkmire, Robert

2009-06-08T23:59:59.000Z

293

Thinner Film Silicon Solar Cells - Energy Innovation Portal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism in Layered NbS2 andThe1 MembersStability| EMSLforThin

294

High Efficiency Thin Film CdTe and a-Si Based Solar Cells Annual Technical Report for the Period  

E-Print Network [OSTI]

High Efficiency Thin Film CdTe and a-Si Based Solar Cells Annual Technical Report for the Period solar cells and on high efficiency a-Si-based thin-film solar cells. The effort on CdTe- based materials the performance of a-SiGe solar cells and properties of a-SiGe single layer films with different Ge contents

Deng, Xunming

295

Phase 2 of the array automated assembly task for the low cost silicon solar array project. Final report  

SciTech Connect (OSTI)

Studies were conducted on several fundamental aspects of electroless nickel/solder metallization for silicon solar cells. A process proposed by Motorola, which precedes the electroless nickel plating with several steps of palladium plating and heat treatment, was compared directly with single step electroless nickel plating. Work has directed toward answering specific questions concerning the effect of silicon surface oxide on nickel plating, effects of thermal stresses on the metallization, sintering of nickel plated on silicon, and effects of exposure to the plating solution on solar cell characteristics. The Motorola process was compared with simple electroless nickel plating in a series of parallel experiments. Results are presented. (WHK)

Petersen, R.C.

1980-11-01T23:59:59.000Z

296

BACK CONTACT MONOCRYSTALLINE THIN-FILM SILICON SOLAR CELLS FROM THE POROUS SILICON PROCESS  

E-Print Network [OSTI]

during phosphorous diffusion which is struc- tured afterwards. Figure 1a demonstrates how a Nd:YVO4 laser

297

Low-Cost Light Weigh Thin Film Solar Concentrators  

Broader source: Energy.gov [DOE]

This presentation was delivered at the SunShot Concentrating Solar Power (CSP) Program Review 2013, held April 2325, 2013 near Phoenix, Arizona.

298

CONCEPT: N-TYPE SILICON SOLAR CELLS WITH SURFACE-PASSIVATED SCREEN-PRINTED ALUMINUM-ALLOYED REAR EMITTER  

E-Print Network [OSTI]

THE ALU+ CONCEPT: N-TYPE SILICON SOLAR CELLS WITH SURFACE- PASSIVATED SCREEN-PRINTED ALUMINUM stability during firing in a conveyor belt furnace at 900°C. We implement our newly developed passivated Al-p+ emitter into an n + np + solar cell structure, the so-called ALU + cell. An independently confirmed

299

Review of Back Contact Silicon Solar Cells for Low-Cost Application  

SciTech Connect (OSTI)

Back contact solar cells hold significant promise for increased performance in photovoltaics for the near future. Two major advantages which these cells possess are a lack of grid shading loss and coplanar interconnection. Front contacted cells can have up to 10% shading loss when using screen printed metal grids. A front contact cell must also use solder connections which run from the front of one cell to the back of the next for series interconnection. This procedure is more difficult to automate than the case of co-planar contacts. The back contact cell design is not a recent concept. The earliest silicon solar cell developed by Bell Labs was a back contact device. There have been many design modifications to the basic concept over the years. To name a few, there is the Interdigitated Back Contact (IBC) cell, the Stanford Point contact solar cell, the Emitter Wrap Through (EWT), and its many variations. A number of these design concepts have demonstrated high efficiency. The SunPower back contact solar cell holds the efficiency record for silicon concentrator cells. The challenge is to produce a high efficiency cell at low cost using high throughput techniques. This has yet to be achieved with a back contact cell design. The focus of this paper will be to review the relevant features of back contact cells and progress made toward the goal of a low cost version of this device.

Smith, David D.

1999-08-04T23:59:59.000Z

300

Production of solar grade (SoG) silicon by refining liquid metallurgical grade (MG) silicon: Annual Report: June 10 1998--October 19, 1999  

SciTech Connect (OSTI)

Pyro-metallurgical refining techniques are being developed for use with molten metallurgical-grade (MG) silicon so that directionally solidified refined MG silicon can be used as solar-grade (SoG) silicon feedstock for photovoltaic applications. The most problematic impurity elements are B and P because of their high segregation coefficients. Refining processes such as evacuation, formation of impurity complexes, oxidation of impurities, and slagging have been effective in removal of impurities from MG silicon. Charge sizes have been scaled up to 60 kg. Impurity analysis of 60-kg charges after refining and directional solidification has shown reduction of most impurities to <1 ppma and B and P to the 10-ppma level. It has been demonstrated that B and P, as well as other impurities, can be reduced from MG silicon. Further reduction of impurities will be necessary for use as SoG silicon. The procedures developed are simple and scaleable to larger charge sizes and carried out in a foundry or MG silicon production plant. Therefore, SoG silicon production using these procedures should be at low cost.

Khattak, C.P.; Joyce, D.B.; Schmid, F.

1999-12-13T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films  

SciTech Connect (OSTI)

n-type polycrystalline silicon (poly-Si) films with very large grains, exceeding 30??m in width, and with high Hall mobility of about 71.5?cm{sup 2}/V s are successfully prepared by the solid-phase crystallization technique on glass through the control of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The effect of this gas flow ratio on the electronic and structural quality of the n-type poly-Si thin film is systematically investigated using Hall effect measurements, Raman microscopy, and electron backscatter diffraction (EBSD), respectively. The poly-Si grains are found to be randomly oriented, whereby the average area weighted grain size is found to increase from 4.3 to 18??m with increase of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The stress in the poly-Si thin films is found to increase above 900?MPa when the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio is increased from 0.025 to 0.45. Finally, high-resolution transmission electron microscopy, high angle annular dark field-scanning tunneling microscopy, and EBSD are used to identify the defects and dislocations caused by the stress in the fabricated poly-Si films.

Kumar, Avishek, E-mail: avishek.kumar@nus.edu.sg, E-mail: dalapatig@imre.a-star.edu.sg [Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Block E3A, #06-01, Singapore 117574 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Law, Felix; Widenborg, Per I. [Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Block E3A, #06-01, Singapore 117574 (Singapore); Dalapati, Goutam K., E-mail: avishek.kumar@nus.edu.sg, E-mail: dalapatig@imre.a-star.edu.sg; Subramanian, Gomathy S.; Tan, Hui R. [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Aberle, Armin G. [Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Block E3A, #06-01, Singapore 117574 and Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore)

2014-11-01T23:59:59.000Z

302

Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems  

E-Print Network [OSTI]

microcrystalline- silicon photovoltaic cell, B) range ofpayback of roof mounted photovoltaic cells. Boustead, I. andmicrocrystalline-silicon photovoltaic cell, B) range of

Zhang, Teresa Weirui

2011-01-01T23:59:59.000Z

303

p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells  

E-Print Network [OSTI]

p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells Ken K. Chin n Department of Physics and Apollo CdTe Solar Energy Research Center, NJIT, Newark, NJ 07058, USA a r t i c l e May 2010 Keywords: CdTe p-Doping Hole density Non-shallow Acceptor Activation energy a b s t r a c

304

Recent improvements in materials for thin GaAs and multibandgap solar cells  

SciTech Connect (OSTI)

The High Efficiency Concepts Program at SERI supports research on III-V compound semiconductors with the objective of achieving the maximum attainable photovoltaic conversion efficiencies for terrestrial solar electric power. The outcome of this research may also affect the future of space photovoltaic cells. While the interest in thin-film, high-efficiency solar cells for terrestrial applications is driven principally by consideration of system costs, such cells would also improve the power density of space power arrays.

Benner, J.P.

1985-05-01T23:59:59.000Z

305

Real time intelligent process control system for thin film solar cell manufacturing  

SciTech Connect (OSTI)

This project addresses the problem of lower solar conversion efficiency and waste in the typical solar cell manufacturing process. The work from the proposed development will lead toward developing a system which should be able to increase solar panel conversion efficiency by an additional 12-15% resulting in lower cost panels, increased solar technology adoption, reduced carbon emissions and reduced dependency on foreign oil. All solar cell manufacturing processes today suffer from manufacturing inefficiencies that currently lead to lower product quality and lower conversion efficiency, increased product cost and greater material and energy consumption. This results in slower solar energy adoption and extends the time solar cells will reach grid parity with traditional energy sources. The thin film solar panel manufacturers struggle on a daily basis with the problem of thin film thickness non-uniformity and other parameters variances over the deposited substrates, which significantly degrade their manufacturing yield and quality. Optical monitoring of the thin films during the process of the film deposition is widely perceived as a necessary step towards resolving the non-uniformity and non-homogeneity problem. In order to enable the development of an optical control system for solar cell manufacturing, a new type of low cost optical sensor is needed, able to acquire local information about the panel under deposition and measure its local characteristics, including the light scattering in very close proximity to the surface of the film. This information cannot be obtained by monitoring from outside the deposition chamber (as traditional monitoring systems do) due to the significant signal attenuation and loss of its scattering component before the reflected beam reaches the detector. In addition, it would be too costly to install traditional external in-situ monitoring systems to perform any real-time monitoring over large solar panels, since it would require significant equipment refurbishing needed for installation of multiple separate ellipsometric systems, and development of customized software to control all of them simultaneously. The proposed optical monitoring system comprises AccuStratas fiber optics sensors installed inside the thin film deposition equipment, a hardware module of different components (beyond the scope of this project) and our software program with iterative predicting capability able to control material bandgap and surface roughness as films are deposited. Our miniature fiber optics monitoring sensors are installed inside the vacuum chamber compartments in very close proximity where the independent layers are deposited (an option patented by us in 2003). The optical monitoring system measures two of the most important parameters of the photovoltaic thin films during deposition on a moving solar panel - material bandgap and surface roughness. In this program each sensor array consists of two fiber optics sensors monitoring two independent areas of the panel under deposition. Based on the monitored parameters and their change in time and from position to position on the panel, the system is able to provide to the equipment operator immediate information about the thin films as they are deposited. This DoE Supply Chain program is considered the first step towards the development of intelligent optical control system capable of dynamically adjusting the manufacturing process on-the-fly in order to achieve better performance. The proposed system will improve the thin film solar cell manufacturing by improving the quality of the individual solar cells and will allow for the manufacturing of more consistent and uniform products resulting in higher solar conversion efficiency and manufacturing yield. It will have a significant impact on the multibillion-dollar thin film solar market. We estimate that the financial impact of these improvements if adopted by only 10% of the industry ($7.7 Billion) would result in about $1.5 Billion in savings by 2015 (at the assumed 20% improvement). This can b

George Atanasoff

2010-10-29T23:59:59.000Z

306

Novel wide band gap materials for highly efficient thin film tandem solar cells  

SciTech Connect (OSTI)

Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PVâ??s goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a mixture of solution and physical vapor deposition processing, but these films lacked the p-type doping levels that are required to make decent solar cells. Over the course of the project PLANT PV was able to fabricate efficient CIGS solar cells (8.7%) but could not achieve equivalent performance using AIGS. During the nine-month grant PLANT PV set up a variety of thin film characterization tools (e.g. drive-level capacitance profiling) at the Molecular Foundry, a Department of Energy User Facility, that are now available to both industrial and academic researchers via the grant process. PLANT PV was also able to develop the back end processing of thin film solar cells at Lawrence Berkeley National Labs to achieve 8.7% efficient CIGS solar cells. This processing development will be applied to other types of thin film PV cells at the Lawrence Berkeley National Labs. While PLANT PV was able to study AIGS film growth and optoelectronic properties we concluded that AIGS produced using these methods would have a limited efficiency and would not be commercially feasible. PLANT PV did not apply for the Phase II of this grant.

Brian E. Hardin, Stephen T. Connor, Craig H. Peters

2012-06-11T23:59:59.000Z

307

13th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers  

SciTech Connect (OSTI)

The 13th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. It will offer an excellent opportunity for researchers in private industry and at universities to prioritize mutual needs for future collaborative research. The workshop is intended to address the fundamental aspects of impurities and defects in silicon: their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. A combination of oral, poster, and discussion sessions will review recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands.

Sopori, B. L.; Rand, J.; Saitoh, T.; Sinton, R.; Stavola, M.; Swanson, D.; Tan, T.; Weber, E.; Werner, J.; Al-Jassim, M.

2003-08-01T23:59:59.000Z

308

Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells  

E-Print Network [OSTI]

Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells trapping, for the nc- Si:H absorber in the Si-based thin film solar cells. Furthermore, nc-Si:H is usually bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc- Si) triple-junction solar cell due to its higher optical

Deng, Xunming

309

Low cost and high performance light trapping structure for thin-film solar cells  

E-Print Network [OSTI]

Nano-scaled dielectric and metallic structures are popular light tapping structures in thin-film solar cells. However, a large parasitic absorption in those structures is unavoidable. Most schemes based on such structures also involve the textured active layers that may bring undesirable degradation of the material quality. Here we propose a novel and cheap light trapping structure based on the prism structured SiO2 for thin-film solar cells, and a flat active layer is introduced purposefully. Such a light trapping structure is imposed by the geometrical shape optimization to gain the best optical benefit. By examining our scheme, it is disclosed that the conversion efficiency of the flat a-Si:H thin-film solar cell can be promoted to exceed the currently certified highest value. As the cost of SiO2-based light trapping structure is much cheaper and easier to fabricate than other materials, this proposal would have essential impact and wide applications in thin-film solar cells.

Wang, DongLin; Su, Gang

2015-01-01T23:59:59.000Z

310

Method of forming particulate materials for thin-film solar cells  

DOE Patents [OSTI]

A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

Eberspacher, Chris; Pauls, Karen Lea

2004-11-23T23:59:59.000Z

311

Structural and chemical investigations of CBD-and PVD-CdS buffer layers and interfaces in Cu(In,Ga)Se2-based thin film solar cells  

E-Print Network [OSTI]

(In,Ga)Se2-based thin film solar cells D. Abou-Rasa,b,*, G. Kostorza , A. Romeob,1 , D. Rudmannb , A Available online 8 December 2004 Abstract It is known that high-efficiency thin film solar cells based on Cu; Chemical bath deposition; CdS buffer 1. Introduction The highest efficiencies for thin film solar cells

Romeo, Alessandro

312

62 Journal of Student Research in Environmental Science at Appalachian Site Suitability Analysis for a Solar Farm  

E-Print Network [OSTI]

]. The semiconductor materials typically used are crystalline-silicone, containing monocrystalline or polycrystalline cells, or thin-film, containing materials including CdTe and copper indium gal- lium selenide, solar modules [2]. Although thin- film solar panels are typically less expensive than c-Si solar panels

Thaxton, Christopher S.

313

THIN FILM SOLAR CELLS AND A REVIEW OF RECENT RESULTS ON GaAs By PAUL RAPPAPORT,  

E-Print Network [OSTI]

154. THIN FILM SOLAR CELLS AND A REVIEW OF RECENT RESULTS ON GaAs By PAUL RAPPAPORT, RCA been known that non-single- crystals films can be used for solar cells as, for example, in the selenium and copper oxide photo- electric exposnre meter. More recently [1], the cadmium sulfide film-type solar cell

Paris-Sud XI, Université de

314

Thin-film solar cell fabricated on a flexible metallic substrate  

DOE Patents [OSTI]

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Tuttle, John R.; Noufi, Rommel; Hasoon, Falah S.

2006-05-30T23:59:59.000Z

315

Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate  

DOE Patents [OSTI]

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

2006-05-30T23:59:59.000Z

316

Phase 2 of the array automated assembly task for the low cost silicon solar array project. Fifth quarterly report  

SciTech Connect (OSTI)

This program focuses attention on one key step of a proposed process sequence for mass production of inexpensive silicon solar arrays for terrestrial use. The process step of concern is the metallization of the solar cell. Solarex has proposed that the metallization be accomplished by a single electroless plating of nickel followed by a dip in molten solder, and Solarex manufactures solar cells using this procedure. ing, cleaning and annealing. Motorola has recommended a process which includes the electroless nickel plate and solder dip of the Solarex process, but which precedes these steps with a number of additional steps of palladium plating, cleaning and annealing. Motorola has claimed that these additional steps are necessary to assure proper ohmic contact with the silicon while at the same time avoiding excessive nickel penetration into the silicon. This program comprises a technical comparison of the Solarex and Motorola processes. Progress is reported.

Petersen, R.C.; Anderson, J.R.

1980-01-01T23:59:59.000Z

317

Lithography-free sub-100nm nanocone array antireflection layer for low-cost silicon solar cell  

E-Print Network [OSTI]

High density and uniformity sub-100nm surface oxidized silicon nanocone forest structure is created and integrated onto the existing texturization microstructures on photovoltaic device surface by a one-step high throughput plasma enhanced texturization method. We suppressed the broadband optical reflection on chemically textured grade-B silicon solar cells for up to 70.25% through this nanomanufacturing method. The performance of the solar cell is improved with the short circuit current increased by 7.1%, fill factor increased by 7.0%, conversion efficiency increased by 14.66%. Our method demonstrates the potential to improve the photovoltaic device performance with low cost high and throughput nanomanufacturing technology.

Xu, Zhida

2014-01-01T23:59:59.000Z

318

Reaching Grid Parity Using BP Solar Crystalline Silicon Technology: A Systems Class Application  

SciTech Connect (OSTI)

The primary target market for this program was the residential and commercial PV markets, drawing on BP Solar's premium product and service offerings, brand and marketing strength, and unique routes to market. These two markets were chosen because: (1) in 2005 they represented more than 50% of the overall US PV market; (2) they are the two markets that will likely meet grid parity first; and (3) they are the two market segments in which product development can lead to the added value necessary to generate market growth before reaching grid parity. Federal investment in this program resulted in substantial progress toward the DOE TPP target, providing significant advancements in the following areas: (1) Lower component costs particularly the modules and inverters. (2) Increased availability and lower cost of silicon feedstock. (3) Product specifically developed for residential and commercial applications. (4) Reducing the cost of installation through optimization of the products. (5) Increased value of electricity in mid-term to drive volume increases, via the green grid technology. (6) Large scale manufacture of PV products in the US, generating increased US employment in manufacturing and installation. To achieve these goals BP Solar assembled a team that included suppliers of critical materials, automated equipment developers/manufacturers, inverter and other BOS manufacturers, a utility company, and University research groups. The program addressed all aspects of the crystalline silicon PV business from raw materials (particularly silicon feedstock) through installation of the system on the customers site. By involving the material and equipment vendors, we ensured that supplies of silicon feedstock and other PV specific materials like encapsulation materials (EVA and cover glass) will be available in the quantities required to meet the DOE goals of 5 to 10 GW of installed US PV by 2015 and at the prices necessary for PV systems to reach grid parity in 2015. This final technical report highlights the accomplishments of the BP Solar technical team from 2006 to the end of the project in February 2010. All the main contributors and team members are recognized for this accomplishment and their endeavors are recorded in the twelve main tasks described here.

Cunningham, Daniel W; Wohlgemuth, John; Carlson, David E; Clark, Roger F; Gleaton, Mark; Posbic, John P; Zahler, James

2010-12-06T23:59:59.000Z

319

P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology  

E-Print Network [OSTI]

is obtained. P-type and N-type vertical TFTs have shown symmetric electrical characteristics. DifferentP-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low) ABSTRACT P-type and N-type multi-gate vertical thin film transistors (vertical TFTs) have been fabricated

Boyer, Edmond

320

Silicon heterojunction solar cell with passivated hole selective MoOx contact Corsin Battaglia,1,2  

E-Print Network [OSTI]

amorphous silicon layer (a-Si:H) as surface passivation layer.3,4 Carrier selectivity at the contacts is traditionally achieved by depos- iting a doped a-Si:H layer after passivation. With this approach record open coefficient combined with a high defect density, a-Si:H, even when only a few nanometers thin, leads to sig

Javey, Ali

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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321

Development of manufacturing capability for high-concentration, high-efficiency silicon solar cells  

SciTech Connect (OSTI)

This report presents a summary of the major results from a program to develop a manufacturable, high-efficiency silicon concentrator solar cell and a cost-effective manufacturing facility. The program was jointly funded by the Electric Power Research Institute, Sandia National Laboratories through the Concentrator Initiative, and SunPower Corporation. The key achievements of the program include the demonstration of 26%-efficient silicon concentrator solar cells with design-point (20 W/cm{sup 2}) efficiencies over 25%. High-performance front-surface passivations; that were developed to achieve this result were verified to be absolutely stable against degradation by 475 days of field exposure at twice the design concentration. SunPower demonstrated pilot production of more than 1500 of these cells. This cell technology was also applied to pilot production to supply 7000 17.7-cm{sup 2} one-sun cells (3500 yielded wafers) that demonstrated exceptional quality control. The average efficiency of 21.3% for these cells approaches the peak efficiency ever demonstrated for a single small laboratory cell within 2% (absolute). Extensive cost models were developed through this program and calibrated by the pilot-production project. The production levels achieved indicate that SunPower could produce 7-10 MW of concentrator cells per year in the current facility based upon the cell performance demonstrated during the program.

Sinton, R.A.; Verlinden, P.J.; Crane, R.A.; Swanson, R.N. [SunPower Corp., Sunnyvale, CA (United States)

1996-10-01T23:59:59.000Z

322

Effects of Radiative Diffusion on Thin Flux Tubes in Turbulent Solar-like Convection  

E-Print Network [OSTI]

We study the combined effects of convection and radiative diffusion on the evolution of thin magnetic flux tubes in the solar interior. Radiative diffusion is the primary supplier of heat to convective motions in the lower convection zone, and it results in a heat input per unit volume of magnetic flux tubes that has been ignored by many previous thin flux tube studies. We use a thin flux tube model subject to convection taken from a rotating spherical shell of turbulent, solar-like convection as described by Weber, Fan, and Miesch (2011, Astrophys. J., 741, 11; 2013, Solar Phys., 287, 239), now taking into account the influence of radiative heating on flux tubes of large-scale active regions. Our simulations show that flux tubes of less than or equal to 60 kG subject to solar-like convective flows do not anchor in the overshoot region, but rather drift upward due to the increased buoyancy of the flux tube earlier in its evolution as a result of the inclusion of radiative diffusion. Flux tubes of magnetic fie...

Weber, Maria A

2015-01-01T23:59:59.000Z

323

First-Principles Study of Back Contact Effects on CdTe Thin Film Solar Cells  

SciTech Connect (OSTI)

Forming a chemically stable low-resistance back contact for CdTe thin-film solar cells is critically important to the cell performance. This paper reports theoretical study of the effects of the back-contact material, Sb{sub 2}Te{sub 3}, on the performance of the CdTe solar cells. First-principles calculations show that Sb impurities in p-type CdTe are donors and can diffuse with low diffusion barrier. There properties are clearly detrimental to the solar-cell performance. The Sb segregation into the grain boundaries may be required to explain the good efficiencies for the CdTe solar cells with Sb{sub 2}Te{sub 3} back contacts.

Du, Mao-Hua [ORNL

2009-01-01T23:59:59.000Z

324

Structural characterisation of BaTiO{sub 3} thin films deposited on SrRuO{sub 3}/YSZ buffered silicon substrates and silicon microcantilevers  

SciTech Connect (OSTI)

We report on the progress towards an all epitaxial oxide layer technology on silicon substrates for epitaxial piezoelectric microelectromechanical systems. (101)-oriented epitaxial tetragonal BaTiO{sub 3} (BTO) thin films were deposited at two different oxygen pressures, 5.10{sup ?2} mbar and 5.10{sup ?3} mbar, on SrRuO{sub 3}/Yttria-stabilized zirconia (YSZ) buffered silicon substrates by pulsed laser deposition. The YSZ layer full (001) orientation allowed the further growth of a fully (110)-oriented conductive SrRuO{sub 3} electrode as shown by X-ray diffraction. The tetragonal structure of the BTO films, which is a prerequisite for the piezoelectric effect, was identified by Raman spectroscopy. In the BTO film deposited at 5.10{sup ?2} mbar strain was mostly localized inside the BTO grains whereas at 5.10{sup ?3} mbar, it was localized at the grain boundaries. The BTO/SRO/YSZ layers were finally deposited on Si microcantilevers at an O{sub 2} pressure of 5.10{sup ?3} mbar. The strain level was low enough to evaluate the BTO Young modulus. Transmission electron microscopy (TEM) was used to investigate the epitaxial quality of the layers and their epitaxial relationship on plain silicon wafers as well as on released microcantilevers, thanks to Focused-Ion-Beam TEM lamella preparation.

Colder, H.; Jorel, C., E-mail: corentin.jorel@unicaen.fr; Mchin, L. [GREYC, UMR 6072, CNRS, ENSICAEN, UCBN, 6 bd du Marchal Juin, 14050 Caen Cedex (France); Domengs, B. [LAMIPS, CRISMAT-NXP Semiconductors-Presto Engineering laboratory, CNRS-UMR 6508, ENSICAEN, UCBN, 2 rue de la Girafe, 14 000 Caen (France); Marie, P.; Boisserie, M. [CIMAP, UMR 6252, CNRS, ENSICAEN, UCBN, CEA, 6 bd du Marchal Juin, 14050 Caen Cedex (France); Guillon, S.; Nicu, L. [LAAS, CNRS, Univ de Toulouse, 7 avenue du Colonel Roche, 31400 Toulouse (France); Galdi, A. [GREYC, UMR 6072, CNRS, ENSICAEN, UCBN, 6 bd du Marchal Juin, 14050 Caen Cedex (France); Department of Industrial Engineering, CNR-SPIN Salerno, Universit di Salerno, 84084 Fisciano, Salerno (Italy)

2014-02-07T23:59:59.000Z

325

Inks for Ink Jet Printed Contacts for High Performance Silicon Solar Cells: Cooperative Research and Development Final Report, CRADA No. CRD-06-199  

SciTech Connect (OSTI)

The work under the proposed CRADA will be a joint effort by BP Solar and NREL to develop new types of high performance inks for high quality contacts to silicon solar cells. NREL will develop inks that have electronic properties that will allow the formation of high quality ohmic contacts to n- and p-type crystalline silicon, and BP Solar will evaluate these contacts in test contact structures.

Ginley, D.

2013-01-01T23:59:59.000Z

326

Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells  

E-Print Network [OSTI]

-i-n solar cells Chang Hyun Lee and Koeng Su Lim Department of Electrical Engineering, Korea Advanced this film, amorphous silicon (a-Si solar cells with a novel p-a-DLC:H/p-a-SiC double p-layer structure were as window materials for amorphous silicon (a-Si based solar cells.14 In using such films as a p layer

Kim, Yong Jung

327

Characterization of the Electronic and Chemical Structure at the Thin Film Solar Cell Interfaces: June 2005 -- June 2009  

SciTech Connect (OSTI)

Study using photoelectron spectroscopy, inverse photoemission, and X-ray absorption and emission to derive the electronic structure of interfaces in CIGSS and CdTe thin-film solar cells.

Heske, C.

2009-09-01T23:59:59.000Z

328

Exciton harvesting, charge transfer, and charge-carrier transport in amorphous-silicon nanopillar/polymer hybrid solar cells  

E-Print Network [OSTI]

report on the device physics of nanostructured amorphous-silicon a-Si:H /polymer hybrid solar cells and nanostructured a-Si:H/polymer systems. We find that strong energy transfer occurs in the a-Si:H/MEH-PPV system. However, inefficient hole transfer from the a-Si:H to the polymers renders negligible photocurrent

McGehee, Michael

329

ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR CELLS  

E-Print Network [OSTI]

ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR to those measured on reference cells passivated by an aluminum-annealed thermal SiO2, while those of the Al of aluminum ox- ide (Al2O3) grown by atomic layer deposition (ALD) pro- vide an excellent level of sur

330

Optimization of the optical properties of nanostructured silicon surfaces for solar cell applications  

SciTech Connect (OSTI)

Surface nanostructuration is an important challenge for the optimization of light trapping in solar cell. We present simulations on both the optical properties and the efficiency of micro pillarsMPsor nanoconesNCssilicon based solar cells together with measurements on their associated optical absorption. We address the simulation using the Finite Difference Time Domain method, well-adapted to deal with a periodic set of nanostructures. We study the effect of the period, the bottom diameter, the top diameter, and the height of the MPs or NCs on the efficiency, assuming that one absorbed photon induces one exciton. This allows us to give a kind of abacus involving all the geometrical parameters of the nanostructured surface with regard to the efficiency of the associated solar cell. We also show that for a given ratio of the diameter over the period, the best efficiency is obtained for small diameters. For small lengths, MPs are extended to NCs by changing the angle between the bottom surface and the vertical face of the MPs. The best efficiency is obtained for an angle of the order of 70. Finally, nanostructures have been processed and allow comparing experimental results with simulations. In every case, a good agreement is found.

Zhou, Di; Pennec, Y.; Djafari-Rouhani, B.; Lambert, Y.; Deblock, Y.; Stivenard, D., E-mail: didier.stievenard@isen.fr [Institut d'Electronique et de Microlectronique et de Nanotechnologies, IEMN, (CNRS, UMR 8520), Groupe de Physique, Cit scientifique, avenue Poincar, 59652 Villeneuve d'Ascq (France); Cristini-Robbe, O. [PHLAM, UMR8523, Universit de Lille 1, 59652 Villeneuve d'Asq Cedex (France); Xu, T. [Key Laboratory of Advanced Display and System Application, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China); Faucher, M. [Institut d'Electronique et de Microlectronique et de Nanotechnologies, IEMN, (CNRS, UMR 8520), Groupe NAM6, Cit scientifique, avenue Poincar, 59652 Villeneuve d'Asq (France)

2014-04-07T23:59:59.000Z

331

Atmospheric performance of the special-purpose Solar Energy Research Institute (SERI) thin-airfoil family  

SciTech Connect (OSTI)

The Solar Energy Research Institute (SERI), in cooperation with SeaWest Energy Group, has completed extensive atmospheric testing of the special-purpose SERI thin-airfoil family during the 1990 wind season. The purpose of this test program was to experimentally verify the predicted performance characteristics of the thin-airfoil family on a geometrically optimized blade, and to compare it to original-equipment blades under atmospheric wind conditions. The tests were run on two identical Micon 65/13 horizontal-axis wind turbines installed side-by-side in a wind farm. The thin-airfoil family 7.96 m blades were installed on one turbine, and AeroStar 7.41 m blades were installed on the other. This paper presents final performance results of the side-by-side comparative field test for both clean and dirty blade conditions. 7 refs., 11 figs., 1 tab.

Tangler, J; Smith, B; Jager, D; Olsen, T

1990-09-01T23:59:59.000Z

332

Solar Chemical Peculiarities?  

E-Print Network [OSTI]

Several investigations of FGK stars in the solar neighborhood have suggested that thin-disk stars with an iron abundance similar to the Sun appear to show higher abundances of other elements, such as silicon, titanium, or nickel. Offsets could arise if the samples contain stars with ages, mean galactocentric distances, or kinematics, that differ on average from the solar values. They could also arise due to systematic errors in the abundance determinations, if the samples contain stars that are different from the Sun regarding their atmospheric parameters. We re-examine this issue by studying a sample of 80 nearby stars with solar-like colors and luminosities. Among these solar "analogs", the objects with solar iron abundances exhibit solar abundances of carbon, silicon, calcium, titanium and nickel.

Carlos Allende Prieto

2006-12-08T23:59:59.000Z

333

Control of morphology for enhanced electronic transport in PECVD-grown a-Si : H Thin Films  

E-Print Network [OSTI]

Solar cells have become an increasingly viable alternative to traditional, pollution causing power generation methods. Although crystalline silicon (c-Si) modules make up most of the market, thin films such as hydrogenated ...

Castro Galnares, Sebastin

2010-01-01T23:59:59.000Z

334

Eighth workshop on crystalline silicon solar cell materials and processes: Extended abstracts and papers  

SciTech Connect (OSTI)

The theme of this workshop is Supporting the Transition to World Class Manufacturing. This workshop provides a forum for an informal exchange of information between researchers in the photovoltaic and non-photovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helps establish a knowledge base that can be used for improving device fabrication processes to enhance solar-cell performance and reduce cell costs. It also provides an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research. The workshop format features invited review presentations, panel discussions, and two poster sessions. The poster sessions create an opportunity for both university and industrial researchers to present their latest results and provide a natural forum for extended discussions and technical exchanges.

NONE

1998-08-01T23:59:59.000Z

335

High-performance hybrid organic-inorganic solar cell based on planar n-type silicon  

SciTech Connect (OSTI)

Hybrid organic-inorganic solar cells were fabricated by spin coating the hole transporting conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film on n-type crystalline silicon (n-Si). By incorporating different additives into the PEDOT:PSS, the conductivity and wettability of PEDOT:PSS film are markedly improved, and the device performance is greatly enhanced accordingly. To further optimize the device performance, poly(3-hexylthiophene) (P3HT) layer was inserted between the n-Si and PEDOT:PSS layer. The P3HT layer blocks electrons from diffusing to the PEDOT:PSS, and hence reduces recombination at the anode side. The device eventually exhibits a high power conversion efficiency of 11.52%.

Chi, Dan [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Qi, Boyuan; Wang, Jizheng [Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Qu, Shengchun, E-mail: qsc@semi.ac.cn; Wang, Zhanguo [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2014-05-12T23:59:59.000Z

336

Tenth Workshop on Crystalline Silicon Solar Cell Materials and Processes: A Summary of Discussion Sessions  

SciTech Connect (OSTI)

The 10th Workshop on Silicon Solar Cell Materials and Processes was held in Copper Mountain, Colorado, on August 13-16, 2000. The workshop was attended by 85 scientists and engineers from 15 international photovoltaic (PV) companies and 24 research institutions. Review and poster presentations were augmented by discussion sessions to address the recent progress and critical issues in meeting the goals for Si in the PV Industry Roadmap. The theme of the workshop was Si Photovoltaics: 10 Years of Progress and Opportunities for the Future. Two special sessions were held: Advanced Metallization and Interconnections - covering recent advances in solar cell metallization, printed contacts and interconnections, and addressing new metallization schemes for low-cost cell interconnections; and Characterization Methods - addressing the growing need for process monitoring techniques in the PV industry. The following major issues emerged from the discussion sessions: (1) Mechanical breakage in the P V industry involves a large fraction, about 5%-10%, of the wafers. (2) The current use of Al screen-printed back-contacts appears to be incompatible with the PV Industry Roadmap requirements. (3) The PV manufacturers who use hydrogen passivation should incorporate the plasma-enhanced chemical vapor deposited (PECVD) nitride for antireflection coating and hydrogenation. (4) There is an imminent need to dissolve metallic precipitates to minimize the electrical shunt problem caused by the ''bad'' regions in wafers. (5) Industry needs equipment for automated, in-line monitoring and testing. There are simply not many tools available to industry. (6) In the Wrap-Up Session of the workshop, there was consensus to create four industry/university teams that would address critical research topics in crystalline silicon. (7) The workshop attendees unanimously agreed that the workshop has served well the PV community by promoting the fundamental understanding of industrial processes, forecasting critical issues and research areas, and promoting a climate of openness to facilitate growth of the industry.

Tan, T.; Swanson, D.; Sinton, R.; Sopori, B.

2001-01-22T23:59:59.000Z

337

Growth direction of oblique angle electron beam deposited silicon monoxide thin films identified by optical second-harmonic generation  

SciTech Connect (OSTI)

Oblique angle deposited (OAD) silicon monoxide (SiO) thin films forming tilted columnar structures have been characterized by second-harmonic generation. It was found that OAD SiO leads to a rotationally anisotropic second-harmonic response, depending on the optical angle of incidence. A model for the observed dependence of the second-harmonic signal on optical angle of incidence allows extraction of the growth direction of OAD films. The optically determined growth directions show convincing agreement with cross-sectional scanning electron microscopy images. In addition to a powerful characterization tool, these results demonstrate the possibilities for designing nonlinear optical devices through SiO OAD.

Vejling Andersen, Sren; Lund Trolle, Mads; Pedersen, Kjeld [Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, DK-9220 Aalborg st (Denmark)] [Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, DK-9220 Aalborg st (Denmark)

2013-12-02T23:59:59.000Z

338

An Unconventional Route to High-Efficiency Dye-Sensitized Solar Cells via Embedding Graphitic Thin Films into TiO2 Nanoparticle  

E-Print Network [OSTI]

An Unconventional Route to High-Efficiency Dye-Sensitized Solar Cells via Embedding Graphitic Thin into the conventional dye- sensitized solar cells (DSSCs), resulting in a remarkably improved cell efficiency due to its followed by direct carbonization. For dye-sensitized TiO2 based solar cells containing carbon/TiO2 thin

Lin, Zhiqun

339

Controlling the Texture and Crystallinity of Evaporated Lead Phthalocyanine Thin Films for Near-Infrared Sensitive Solar Cells  

E-Print Network [OSTI]

Controlling the Texture and Crystallinity of Evaporated Lead Phthalocyanine Thin Films for Near-Infrared Sensitive Solar Cells Karolien Vasseur,, Katharina Broch,§ Alexander L. Ayzner, Barry P. Rand, David Cheyns: To achieve organic solar cells with a broadened spectral absorption, we aim to promote the growth of the near

Schreiber, Frank

340

Simultaneous P and B diffusion, in-situ surface passivation, impurity filtering and gettering for high-efficiency silicon solar cells  

SciTech Connect (OSTI)

A technique is presented to simultaneously diffuse boron and phosphorus in silicon, and grow an in-situ passivating oxide in a single furnace step. It is shown that limited solid doping sources made from P and B Spin-On Dopant (SOD) films can produce optimal n{sup +} and p{sup +} profiles simultaneously without the deleterious effects of cross doping. A high quality passivating oxide is grown in-situ beneath the thin ({approximately} 60 {angstrom}) diffusion glass, resulting in low J{sub o} values below 100 fA/cm{sup 2} for transparent ({approximately} 100 {Omega}/{open_square}) phosphorus and boron diffusions. For the first time it is shown that impurities present in the boron SOD film can be effectively filtered out by employing separate source wafers, resulting in bulk lifetimes in excess of 1 ms for the sample wafers. The degree of lifetime degradation in the sources is related to the gettering efficiency of boron in silicon. This novel simultaneous diffusion, in-situ oxidation, impurity filtering and gettering technique was successfully used to produce 20.3% Fz, and 19.1% Cz solar cells, in one furnace step.

Krygowski, T.; Rohatgi, A. [Georgia Inst. of Tech., Atlanta, GA (United States); Ruby, D. [Sandia National Labs., Albuquerque, NM (United States)

1997-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Dual mechanical behaviour of hydrogen in stressed silicon nitride thin films  

SciTech Connect (OSTI)

In the present article, we report a study on the mechanical behaviour displayed by hydrogen atoms and pores in silicon nitride (SiN) films. A simple three-phase model is proposed to relate the physical properties (stiffness, film stress, mass density, etc.) of hydrogenated nanoporous SiN thin films to the volume fractions of hydrogen and pores. This model is then applied to experimental data extracted from films deposited by plasma enhanced chemical vapour deposition, where hydrogen content, stress, and mass densities range widely from 11% to 30%, ?2.8 to 1.5?GPa, and 2.0 to 2.8?g/cm{sup 3}, respectively. Starting from the conventional plotting of film's Young's modulus against film porosity, we first propose to correct the conventional calculation of porosity volume fraction with the hydrogen content, thus taking into account both hydrogen mass and concentration. The weight of this hydrogen-correction is found to evolve linearly with hydrogen concentration in tensile films (in accordance with a simple mass correction of the film density calculation), but a clear discontinuity is observed toward compressive stresses. Then, the effective volume occupied by hydrogen atoms is calculated taking account of the bond type (N-H or Si-H bonds), thus allowing a precise extraction of the hydrogen volume fraction. These calculations applied to tensile films show that both volume fractions of hydrogen and porosity are similar in magnitude and randomly distributed against Young's modulus. However, the expected linear dependence of the Young's modulus is clearly observed when both volume fractions are added. Finally, we show that the stiffer behaviour of compressive films cannot be only explained on the basis of this (hydrogen?+?porosity) volume fraction. Indeed this stiffness difference relies on a dual mechanical behaviour displayed by hydrogen atoms against the film stress state: while they participate to the stiffness in compressive films, hydrogen atoms mainly behave like pores in tensile films where they do not participate to the film stiffness.

Volpi, F., E-mail: fabien.volpi@simap.grenoble-inp.fr; Braccini, M.; Pasturel, A. [Univ. Grenoble Alpes, SIMAP, F-38000 Grenoble (France); CNRS, SIMAP, F-38000 Grenoble (France); Devos, A. [IEMN, UMR 8520 CNRS, Avenue Poincarr - CS 60069 - 59652 Villeneuve d'Ascq Cedex (France); Raymond, G. [Univ. Grenoble Alpes, SIMAP, F-38000 Grenoble (France); CNRS, SIMAP, F-38000 Grenoble (France); STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); Morin, P. [STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France)

2014-07-28T23:59:59.000Z

342

12th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Summary Discussion Sessions  

SciTech Connect (OSTI)

This report is a summary of the discussion sessions of the 12th Workshop on Crystalline Silicon Solar Cells and Processes. The theme of the workshop was"Fundamental R&D in c-Si: Enabling Progress in Solar-Electric Technology." This theme was chosen to reflect a concern that the current expansion in the PV energy production may redirect basic research efforts to production-oriented issues. The PV industry is installing added production capacity and new production lines that include the latest technologies. Once the technologies are selected, it is difficult to make changes. Consequently, a large expansion can stagnate the technologies and diminish interest in fundamental research. To prevent the fundamental R&D program from being overwhelmed by the desire to address immediate engineering issues, there is a need to establish topics of fundamental nature that can be pursued by the universities and the research institutions. Hence, one of the objectives of the workshop was to identify such areas for fundamental research.

Sopori, B.; Swanson, D.; Sinton, R.; Tan, T.

2003-02-01T23:59:59.000Z

343

Silicon materials task of the low cost solar array project (Phase III). Effect of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 1: characterization methods for impurities in silicon and impurity effects data base  

SciTech Connect (OSTI)

The object of Phase III of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells. The study encompassed a variety of tasks including: (1) a detailed examination of thermal processing effects, such as HCl and POCl/sub 3/ gettering on impurity behavior, (2) completion of the data base and modeling for impurities in n-base silicon, (3) extension of the data base on p-type material to include elements likely to be introduced during the production, refining, or crystal growth of silicon, (4) effects on cell performance on anisotropic impurity distributions in large CZ crystals and silicon webs, and (5) a preliminary assessment of the permanence of the impurity effects. Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. For example, discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, and conventional solar cell I-V techniques, as well as descriptions of silicon chemical analysis are included. Considerable data are tabulated on the composition, electrical, and solar cell characteristics of impurity-doped silicon.

Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

1980-01-01T23:59:59.000Z

344

Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells  

E-Print Network [OSTI]

1 Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells, Setagaya-ku, Tokyo 157-8572, Japan (Received ) KEYWORDS: ZnS buffer, Cu(In,Ga)Se2, thin-film solar cells alternative to CdS in polycrystalline thin-film Cu(In1-xGax)Se2 (CIGS) solar cells. Cells with efficiency

Sites, James R.

345

Experimental Investigation of Size Effects on the Thermal Conductivity of Silicon-Germanium Alloy Thin Films  

E-Print Network [OSTI]

We experimentally investigate the role of size effects and boundary scattering on the thermal conductivity of silicon-germanium alloys. The thermal conductivities of a series of epitaxially grown Si[subscript 1-x] Ge[subscript ...

Cheaito, Ramez

346

Electron and hole drift mobility measurements on thin film CdTe solar cells Qi Long, Steluta A. Dinca, E. A. Schiff, Ming Yu, and Jeremy Theil  

E-Print Network [OSTI]

.1063/1.2220491 Lock-in thermography and nonuniformity modeling of thin-film CdTe solar cells Appl. Phys. Lett. 84, 729

Schiff, Eric A.

347

Identification of critical stacking faults in thin-film CdTe solar cells  

SciTech Connect (OSTI)

Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl{sub 2} is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies.

Yoo, Su-Hyun; Walsh, Aron, E-mail: a.walsh@bath.ac.uk [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Butler, Keith T. [Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Soon, Aloysius [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Abbas, Ali; Walls, John M., E-mail: j.m.wall@loughborough.ac.uk [Centre for Renewable Energy Systems Technology, School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

2014-08-11T23:59:59.000Z

348

Thin Film Solar Cells Derived from Sintered Semiconductor Quantum Dots: Cooperative Research and Development Final Report, CRADA number CRD-07-00226  

SciTech Connect (OSTI)

The NREL/Evident team will develop techniques to fabricate thin film solar cells where the absorption layers comprising the solar cells are derived from sintered semiconductor quantum dots.

Ginley, D. S.

2010-07-01T23:59:59.000Z

349

Generation of low work function, stable compound thin films by laser ablation  

DOE Patents [OSTI]

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

2001-01-01T23:59:59.000Z

350

Spatially resolved determination of the short-circuit current density of silicon solar cells via lock-in thermography  

SciTech Connect (OSTI)

We present a spatially resolved method to determine the short-circuit current density of crystalline silicon solar cells by means of lock-in thermography. The method utilizes the property of crystalline silicon solar cells that the short-circuit current does not differ significantly from the illuminated current under moderate reverse bias. Since lock-in thermography images locally dissipated power density, this information is exploited to extract values of spatially resolved current density under short-circuit conditions. In order to obtain an accurate result, one or two illuminated lock-in thermography images and one dark lock-in thermography image need to be recorded. The method can be simplified in a way that only one image is required to generate a meaningful short-circuit current density map. The proposed method is theoretically motivated, and experimentally validated for monochromatic illumination in comparison to the reference method of light-beam induced current.

Fertig, Fabian, E-mail: fabian.fertig@ise.fraunhofer.de; Greulich, Johannes; Rein, Stefan [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, D-79110 Freiburg (Germany)

2014-05-19T23:59:59.000Z

351

Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence  

SciTech Connect (OSTI)

It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, inline tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

2011-01-01T23:59:59.000Z

352

Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint  

SciTech Connect (OSTI)

It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

2011-07-01T23:59:59.000Z

353

A non-resonant dielectric metamaterial for enhancement of thin-film solar cells  

E-Print Network [OSTI]

Recently, we have suggested dielectric metamaterial composed as an array of submicron dielectric spheres located on top of an amorphous thin-film solar cell. We have theoretically shown that this metamaterial can decrease the reflection and simultaneously can suppress the transmission through the photovoltaic layer because it transforms the incident plane wave into a set of focused light beams. This theoretical concept has been strongly developed and experimentally confirmed in the present paper. Here we consider the metamaterial for oblique angle illumination, redesign the solar cell and present a detailed experimental study of the whole structure. In contrast to our precedent theoretical study we show that our omnidirectional light-trapping structure may operate better than the optimized flat coating obtained by plasma-enhanced chemical vapor deposition.

Omelyanovich, Mikhail; Simovski, Constantin

2014-01-01T23:59:59.000Z

354

Well-Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells: Preprint  

SciTech Connect (OSTI)

We have developed hydrogenated amorphous silicon (a Si:H) back contacts to both p- and n-type silicon wafers, and employed them in double-heterojunction solar cells. These contacts are deposited entirely at low temperature (<250 C) and replace the standard diffused or alloyed back-surface-field contacts used in single-heterojunction (front-emitter only) cells. High-quality back contacts require excellent surface passivation, indicated by a low surface recombination velocity of minority-carriers (S) or a high open-circuit voltage (Voc). The back contact must also provide good conduction for majority carriers to the external circuit, as indicated by a high light I-V fill factor. We use hot-wire chemical vapor deposition (HWCVD) to grow a-Si:H layers for both the front emitters and back contacts. Our improved a-Si:H back contacts contribute to our recent achievement of a confirmed 18.2% efficiency in double-heterojunction silicon solar cells on p type textured silicon wafers.

Page, M. R.; Iwaniczko, E.; Xu, Y.; Wang, Q.; Yan, Y.; Roybal, L.; Branz, H. M.; Wang, T. H.

2006-05-01T23:59:59.000Z

355

Broadband antireflection and absorption enhancement of ultrathin silicon solar microcells enabled with density-graded surface nanostructures  

SciTech Connect (OSTI)

Density-graded surface nanostructures are implemented on ultrathin silicon solar microcells by silver-nanoparticle-catalyzed wet chemical etching to enable near-zero surface reflection over a broad wavelength range of incident solar spectrum as well as non-zeroth order diffraction and light trapping for longer wavelength photons, thereby achieving augmented photon absorption for ultrathin silicon microcells in a simple, cost-effective manner. The increase of absorbed photon flux through the black silicon (b-Si) surface translates directly into the corresponding enhancement of photovoltaic performance, where 5.7-?m b-Si microcells with the rational design of device configuration exhibit improved energy conversion efficiency by 148% and 50% with and without a diffuse backside reflector, respectively, compared to devices from the bare silicon without b-Si implementation. Systematic studies on nanostructured morphology, optical and electrical properties of b-Si microcells, together with semi-empirical numerical modeling of photon absorption, provide key aspects of underlying materials science and physics.

Chan, Lesley; Kang, Dongseok; Lee, Sung-Min; Li, Weigu; Hunter, Hajirah [Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089 (United States); Yoon, Jongseung, E-mail: js.yoon@usc.edu [Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089 (United States); Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089 (United States)

2014-06-02T23:59:59.000Z

356

Multilayer nanoparticle arrays for broad spectrum absorption enhancement in thin film solar cells  

E-Print Network [OSTI]

In this paper, we present a theoretical study on the absorption efficiency enhancement of a thin film amorphous Silicon (a-Si) photovoltaic cell over a broad spectrum of wavelengths using multiple nanoparticle arrays. The light absorption efficiency is enhanced in the lower wavelengths by a nanoparticle array on the surface and in the higher wavelengths by another nanoparticle array embedded in the active region. The efficiency at intermediate wavelengths is enhanced by the constructive interference of plasmon coupled light. We optimize this design by tuning the radius of particles in both arrays, the period of the array and the distance between the two arrays. The optimization results in 61.44% increase in total quantum efficiency for a 500 nm thick a-Si substrate.

Krishnan, Aravind; Krishna, Siva Rama; Khan, Mohammed Zafar Ali

2013-01-01T23:59:59.000Z

357

European Photovoltaic Solar Energy Conference, Frankfurt, Germany, 24-28 September 2012, 2AO.2.4 HIGH EFFICIENCY BACK-CONTACT BACK-JUNCTION SILICON SOLAR CELLS WITH CELL  

E-Print Network [OSTI]

27th European Photovoltaic Solar Energy Conference, Frankfurt, Germany, 24-28 September 2012, 2AO.2 cost of energy in photovoltaics can be achieved by increasing the conversion efficiency as well into the surface of a thick silicon wafer. After sintering at 1100 °C in hydrogen atmosphere silicon is grown

358

Crystal Silicon Heterojunction Solar Cells by Hot-Wire CVD: Preprint  

SciTech Connect (OSTI)

Hot-wire chemical vapor deposition (HWCVD) is a promising technique for fabricating Silicon heterojunction (SHJ) solar cells. In this paper we describe our efforts to increase the open circuit voltage (Voc) while improving the efficiency of these devices. On p-type c-Si float-zone wafers, we used a double heterojunction structure with an amorphous n/i contact to the top surface and an i/p contact to the back surface to obtain an open circuit voltage (Voc) of 679 mV in a 0.9 cm2 cell with an independently confirmed efficiency of 19.1%. This is the best reported performance for a cell of this configuration. We also made progress on p-type CZ wafers and achieved 18.7% independently confirmed efficiency with little degradation under prolong illumination. Our best Voc for a p-type SHJ cell is 0.688 V, which is close to the 691 mV we achieved for SHJ cells on n type c-Si wafers.

Wang, Q.; Page, M. R.; Iwaniczko, E.; Xu, Y. Q.; Roybal, L.; Bauer, R.; To, B.; Yuan, H. C.; Duda, A.; Yan, Y. F.

2008-05-01T23:59:59.000Z

359

Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint  

SciTech Connect (OSTI)

We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

2012-06-01T23:59:59.000Z

360

Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics  

E-Print Network [OSTI]

solid state battery ..of the thin-film solid state battery is shown in Fig. 13.the thin-film solid state battery. CHAPTER FIVE Performance

Kang, Jin Sung

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Amorphous thin films for solar-cell applications. Final report, September 11, 1978-September 10, 1979  

SciTech Connect (OSTI)

In Section II, Theoretical Modeling, theories for the capture of electrons by deep centers in hydrogenated amorphous silicon (a-Si:H) and for field-dependent quantum efficiency in a-Si:H are presented. In Section III, Deposition and Doping Studies, the optimization of phosphorus-doped a-Si:H carried out in four different discharge systems is described. Some details of the dc proximity and rf magnetron discharge systems are also provided. Preliminary mass spectroscopy studies of the rf magnetron discharge in both SiH/sub 4/ and SiF/sub 4/ are presented. In Section IV, Experimental Methods for Characterizing a-Si:H, recent work involving photoluminescence of fluorine-doped a-Si:H, photoconductivity spectra, the photoelectromagnetic effect, the photo-Hall effect and tunneling into a-Si:H is presented. Also, studies of the growth mechanism of Pt adsorbed on both crystalline Si and a-Si:H are described. Measurements of the surface photovoltage have been used to estimate the distribution of surface states of phosphorus-doped and undoped a-Si:H. Section V, Formation of Solar-Cell Structures, contains information on stacked or multiple-junction a-Si:H solar cells. In Section VI, Theoretical and Experimental Evaluation of Solar-Cell Parameters, an upper limit of approx. = 400 A is established for the hole diffusion length in undoped a-Si:H. A detailed description of carrier generation, recombination and transport in a-Si:H solar cells is given. Finally, some characteristics of Pd-Schottky-barrier cells are described for different processing histories.

Carlson, D E; Balberg, I; Crandall, R S; Goldstein, B C; Hanak, J J; Pankove, J I; Staebler, D L; Weakliem, H A; Williams, R

1980-02-01T23:59:59.000Z

362

Structural changes during the reaction of Ni thin films with (100) silicon substrates  

E-Print Network [OSTI]

thin transition metal silicide ?lms due to their ability tothe metal ?lm and the Ni concentration at the oxide/silicidemetal can di?use to the SiO 2 /Si interface and from silicide

Thron, Andrew M.; Greene, Peter K.; Liu, Kai; van Benthem, Klaus

2012-01-01T23:59:59.000Z

363

amorphous-silicon-based thin-film photovoltaic: Topics by E-print...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

devices have been obtained by a direct polymerization of undoped (or p-type doped) thin film (CH)x layer onto a polycrystalline cadmium sulfide film Paris-Sud XI, Universit...

364

A design study on the scaling limit of ultra-thin silicon- on-insulator MOSFETs  

E-Print Network [OSTI]

oxygen-ion implantation (SIMOX) and wafer bonding are particularly suitable for VLSI applications due to their compatibility with established CMOS processing technology.technologies for the formation of silicon-on-insulator structures. They are SIMOX (Separation by Implanted Oxygen),technology is illustrated in Fig. 4.19. A high dose of oxygen

Lu, Wei-Yuan

2007-01-01T23:59:59.000Z

365

Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces  

DOE Patents [OSTI]

A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

2014-09-09T23:59:59.000Z

366

QUANTIFICATION OF LOSSES IN THIN-FILM CdS/CdTe SOLAR CELLS S.H. Demtsu and J.R. Sites  

E-Print Network [OSTI]

QUANTIFICATION OF LOSSES IN THIN-FILM CdS/CdTe SOLAR CELLS S.H. Demtsu and J.R. Sites Department of Physics, Colorado State University, Fort Collins, CO 80523, USA ABSTRACT Quantification of solar cell Thin-film CdS/CdTe devices have been studied extensively, but some basic underlying properties

Sites, James R.

367

The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1  

E-Print Network [OSTI]

, to a better p-type, to insulating, and then to n-type -- is all due to different levels of Cu involvement treatment temperature. #12;2 I. Introduction CdTe based solar panels have emerged in recent years1 The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1 , T.A. Gessert2

368

Optically optimal wavelength-scale patterned ITO/ZnO composite coatings for thin film solar cells  

E-Print Network [OSTI]

A new methodology is proposed for finding structures that are, optically speaking, locally optimal : a physical analysis of much simpler structures is used to constrain the optimization process. The obtained designs are based on a flat amorphous silicon layer (to minimize recombination) with a patterned anti-reflective coating made of ITO or ZnO, or a composite ITO/ZnO coating. These latter structures are realistic and present good performances despite very thin active layers.

Moreau, Antoine; Centeno, Emmanuel; Seassal, Christian

2012-01-01T23:59:59.000Z

369

Solar cell array interconnects  

DOE Patents [OSTI]

Electrical interconnects are disclosed for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value. 4 figs.

Carey, P.G.; Thompson, J.B.; Colella, N.J.; Williams, K.A.

1995-11-14T23:59:59.000Z

370

Solar cell array interconnects  

DOE Patents [OSTI]

Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

Carey, Paul G. (Mountain View, CA); Thompson, Jesse B. (Brentwood, CA); Colella, Nicolas J. (Livermore, CA); Williams, Kenneth A. (Livermore, CA)

1995-01-01T23:59:59.000Z

371

FILM ADHESION IN TRIPLE JUNCTION a-Si SOLAR CELLS ON POLYIMIDE and X. Deng1,2  

E-Print Network [OSTI]

FILM ADHESION IN TRIPLE JUNCTION a-Si SOLAR CELLS ON POLYIMIDE SUBSTRATES A. Vijh1,2 , X. Yang1 , W of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous), and the effect of tie coats on film adhesion. INTRODUCTION Amorphous silicon (a-Si) based solar cells

Deng, Xunming

372

Quantitative analysis of defects in silicon. Silicon sheet growth development for the Large Area Silicon Sheet Task of the Low-Cost Solar Array Project. Final report  

SciTech Connect (OSTI)

The complete procedures for the defect analysis of silicon samples using a QTM-720 Image Analyzing System are described, chemical polishing, etching, and QTM operation are discussed. The data from one hundred and seventy four (174) samples, and a discussion of the data are included. The data include twin boundary density, dislocation pit density, and grain boundary length. (WHK)

Natesh, R.; Smith, J.M.; Bruce, T.; Qidwai, H.A.

1980-04-01T23:59:59.000Z

373

The Effects of Damage on Hydrogen-Implant-Induced Thin-Film Separation from Bulk Silicon Carbide  

SciTech Connect (OSTI)

Exfoliation of Sic by hydrogen implantation and subsequent annealing forms the basis for a thin-film separation process which, when combined with hydrophilic wafer bonding, can be exploited to produce silicon-carbide-on-insulator, SiCOI. Sic thin films produced by this process exhibit unacceptably high resistivity because defects generated by the implant neutralize electrical carriers. Separation occurs because of chemical interaction of hydrogen with dangling bonds within microvoids created by the implant, and physical stresses due to gas-pressure effects during post-implant anneal. Experimental results show that exfoliation of Sic is dependent upon the concentration of implanted hydrogen, but the damage generated by the implant approaches a point when exfoliation is, in fact, retarded. This is attributed to excessive damage at the projected range of the implant which inhibits physical processes of implant-induced cleaving. Damage is controlled independently of hydrogen dosage by elevating the temperature of the SiC during implant in order to promote dynamic annealing. The resulting decrease in damage is thought to promote growth of micro-cracks which form a continuous cleave. Channeled H{sup +} implantation enhances the cleaving process while simultaneously minimizing residual damage within the separated film. It is shown that high-temperature irradiation and channeling each reduces the hydrogen fluence required to affect separation of a thin film and results in a lower concentration of defects. This increases the potential for producing SiC01 which is sufficiently free of defects and, thus, more easily electrically activated.

Gregory, R.B.; Holland, O.W.; Thomas, D.K.; Wetteroth, T.A.; Wilson, S.R.

1999-04-05T23:59:59.000Z

374

CdS thin films on LiNbO{sub 3} (1 0 4) and silicon (1 1 1) substrates prepared through an atom substitution method  

SciTech Connect (OSTI)

CdS thin films on LiNbO{sub 3} (1 0 4) and silicon (1 1 1) substrates were prepared through an atom substitution technique using cadmium nitrate as a reactant in an H{sub 2}S atmosphere at 230 {sup o}C. X-ray diffraction, scanning electron microscopy and transmission microscopy results indicate that the CdS film grows on LiNbO{sub 3} oriented along the [0 0 1] axis in form of crystallized nanoplates, while that deposited on silicon forms randomly oriented nanoparticles. Investigation of the precursor thin film suggests that CdS forms from the O in the CdO precursor thin film being substituted by S from H{sub 2}S in the surrounding environment, which is designated as an atom substitution process. This novel method involving an atom substitution reaction between the CdO precursor thin film and its environment can provide a new low cost approach to the preparation of chalcogenide or other compound thin films. A schematic illustration and corresponding mechanism describing the details of this method are proposed. -- Graphical abstract: Elemental O in CdO is substituted by elemental S from the atmosphere in the apparatus, which is designated as an atom substitution process. This novel method involving an atom substitution reaction between the CdO precursor thin film and its environment can provide a new low cost approach to the preparation of chalcogenide or other compound thin films. Display Omitted Research highlights: {yields} An atom substitution method for thin film preparation was demonstrated. {yields} Combination of the atom substitution and spin coating method was achieved. {yields} Well oriented CdS thin film was prepared on LiNbO{sub 3} substrate. {yields} The atom substitution method could be used for many compound systems.

Qin Haiming; Zhao Yue [State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100 (China); Liu Hong, E-mail: hongliu@sdu.edu.c [State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100 (China); Gao Zheng [State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100 (China); Wang Jiyang, E-mail: Jywang@sdu.edu.c [State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100 (China); Liu Duo; Sang Yuanhua; Yao Bin [State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100 (China); Boughton, Robert I. [Center for Material Science, Bowling Green State University, Bowling Green, OH 43403 (United States)

2011-03-15T23:59:59.000Z

375

DEVELOPMENT OF A NOVEL PRECURSOR FOR THE PREPARATION BY SELENIZATION OF HIGH EFFICIENCY CuInGaSe2/CdS THIN FILM SOLAR CELLS  

E-Print Network [OSTI]

/CdS THIN FILM SOLAR CELLS N. Romeo1 , A. Bosio1 , V. Canevari2 , R. Tedeschi1 , S. Sivelli1 , A. Solar cells prepared by depositing in sequence on top of the CuInGaSe2 film 60 nm of CdS, 100 nm of pure(InGa)Se2, Thin Films, Selenization 1 INTRODUCTION CuInGaSe2 based solar cells exhibit the highest

Romeo, Alessandro

376

Preparation of silicon substrates for gallium-arsenide solar cells by electron-beam-pulse processing. Annual technical report, March 15, 1980-March 15, 1981  

SciTech Connect (OSTI)

In the past year a process has been developed for creating high-quality epitaxial layers of germanium on silicon substrates using rapid heating and cooling with a pulsed electron beam. This single-crystal germanium coating is the key to the production of high efficiency GaAs solar cells on low-cost silicon substrates in an economical manner. Thin (less than or equal to 1 ..mu..m) layers of Ge have been deposited on Si wafers by chemical vapor deposition (CVD) in single-crystal form or by vacuum evaporation in amorphous or polycrystalline form. The CVD films have given the best results, with good crystallinity and electrical properties as deposited. A persistent problem with surface roughness in the as-deposited films has been overcome by pulsed electron beam melting of the near-surface region in time periods on the order of a microsecond. The brief molten period smooths the surface features without compromising the crystallinity, electrical properties, or interfacial abruptness of the Ge film. These layers are of a quality suitable for further evaluation by GaAs growth and cell processing in the next phase of the program. Pulsed electron beam processing also serves a vital function for the evaporated Ge films, which are melted by the beam and recrystallized on the Si substrates, epitaxial single crystal Ge layers result from amorphous or polycrystalline starting films. To date results have not been as satisfactory as for CVD films; contamination from several sources has been identified as a problem. Many of these sources have been eliminated, so that a decision on the intrinsic limitations of the evaporated film approach should be made in the near future.

Tobin, S.P.

1981-05-01T23:59:59.000Z

377

Ballistic Phonon Transport in Ultra-Thin Silicon Layers: Effects of Confinement and Orientation  

E-Print Network [OSTI]

­23]. The thermal conductivity in bulk Si is isotropic, however, in low-dimensional materials the choice formalism to calculate the thermal conductance. We consider the major thin layer surface orientations {100}, {110}, {111}, and {112}. For every surface orientation, we study thermal conductance as a function

378

Indium doped zinc oxide nanowire thin films for antireflection and solar absorber coating applications  

SciTech Connect (OSTI)

Indium doped ZnO nanowire thin films were prepared by thermal oxidation of Zn-In metal bilayer films at 500C. The ZnO:In nanowires are 20-100 nm in diameter and several tens of microns long. X-ray diffraction patterns confirm the formation of oxide and indicate that the films are polycrystalline, both in the as deposited and annealed states. The transmission which is <2% for the as deposited Zn-In films increases to >90% for the ZnO:In nanowire films. Significantly, the reflectance for the as deposited films is < 10% in the region between 200 to 1500 nm and < 2% for the nanowire films. Thus, the as deposited films can be used solar absorber coatings while the nanowire films are useful for antireflection applications. The growth of nanowires by this technique is attractive since it does not involve very high temperatures and the use of catalysts.

Shaik, Ummar Pasha [ACRHEM, University of Hyderabad, Hyderabad-500046 (India); Krishna, M. Ghanashyam, E-mail: mgksp@uohyd.ac.in [ACRHEM and School of Physics, University of Hyderabad, Hyderabad-500046 (India)

2014-04-24T23:59:59.000Z

379

Has sempra found El Dorado in solar PVs? grid parity may now be within reach  

SciTech Connect (OSTI)

Instead of using conventional polycrystalline silicon modules that turn sunlight into electricity, these solar panels use cadmium telluride, a lower-cost semiconductor manufactured into thin-film cells that are cheaper to manufacture than their silicon-based counterparts. Electricity is being produced at costs as low as 7.5 {cents}/kWh.

NONE

2009-03-15T23:59:59.000Z

380

Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces  

SciTech Connect (OSTI)

A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe{sub 2}O{sub 4} films can be grown epitaxially on Si(111) using a Y{sub 2}O{sub 3} buffer layer, and remarkably the Y{sub 2}O{sub 3}/Si(111) interface is stable and remains atomically sharp. CoFe{sub 2}O{sub 4} films present high crystal quality and high saturation magnetization.

Coux, P. de [Institut de Cincia de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Barcelona (Spain); CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4 (France); Bachelet, R.; Fontcuberta, J.; Snchez, F., E-mail: fsanchez@icmab.es [Institut de Cincia de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Barcelona (Spain); Warot-Fonrose, B. [CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4 (France); Skumryev, V. [Instituci Catalana de Recerca i Estudis Avanats (ICREA), Barcelona, Spain and Dep. de Fsica, Univ. Autnoma de Barcelona, 08193 Bellaterra (Spain); Lupina, L.; Niu, G.; Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

2014-07-07T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}  

DOE Patents [OSTI]

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

Mickelsen, R.A.; Chen, W.S.

1985-08-13T23:59:59.000Z

382

Copper and Transparent-Conductor Reflectarray Elements on Thin-Film Solar Cell Panels  

E-Print Network [OSTI]

This work addresses the integration of reflectarray antennas (RA) on thin film Solar Cell (SC) panels, as a mean to save real estate, weight, or cost in platforms such as satellites or transportable autonomous antenna systems. Our goal is to design a good RA unit cell in terms of phase response and bandwidth, while simultaneously achieving high optical transparency and low microwave loss, to preserve good SC and RA energy efficiencies, respectively. Since there is a trade-off between the optical transparency and microwave surface conductivity of a conductor, here both standard copper and transparent conductors are considered. The results obtained at the unit cell level demonstrates the feasibility of integrating RA on a thin-film SC, preserving for the first time good performance in terms of both SC and RA efficiency. For instance, measurement at X-band demonstrate families of cells providing a phase range larger than 270{\\deg} with average microwave loss of -2.45dB (resp. -0.25dB) and average optical transpa...

Dreyer, Philippe; Nicolay, Sylvain; Ballif, Christophe; Perruisseau-Carrier, Julien

2013-01-01T23:59:59.000Z

383

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2  

DOE Patents [OSTI]

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Mickelsen, Reid A. (Bellevue, WA) [Bellevue, WA; Chen, Wen S. (Seattle, WA) [Seattle, WA

1985-08-13T23:59:59.000Z

384

The structure and kinematics of the the Galaxy thin gaseous disc outside the solar orbit  

E-Print Network [OSTI]

The rotation curve of the Galaxy is generally thought to be flat. However, using radial velocities from interstellar molecular clouds, which is common in rotation curve determination, seems to be incorrect and may lead to incorrectly inferring that the rotation curve is flat indeed. Tests basing on photometric and spectral observations of bright stars may be misleading. The rotation tracers (OB stars) are affected by motions around local gravity centers and pulsation effects seen in such early type objects. To get rid of the latter a lot of observing work must be involved. We introduce a method of studying the kinematics of the thin disc of our Galaxy outside the solar orbit in a way that avoids these problems. We propose a test based on observations of interstellar CaII H and K lines that determines both radial velocities and distances. We implemented the test using stellar spectra of thin disc stars at galactic longitudes of 135{\\degr} and 180{\\degr}. Using this method, we constructed the rotation curve of ...

Galazutdinov, G A; Musaev, F A; Bondar, A; Krelowski, J

2015-01-01T23:59:59.000Z

385

Amorphous silicon/polyaniline heterojunction solar cells: Fermi levels and open-circuit voltages  

E-Print Network [OSTI]

these open-circuit voltages are lower than for the best a-Si:H cells utilizing nanocrystalline Si or a reports on conducting polymer/ amorphous silicon (a-Si:H) structures [1­4] and conduct- ing polymer/crystalline silicon (c-Si) structures [5,6]. In this paper, we report our research on polyaniline (PANI)/a-Si:H

Schiff, Eric A.

386

Electroless (autocatalytic) nickel-cobalt thin films as solar control coatings  

SciTech Connect (OSTI)

This paper describes the deposition of nickel-cobalt-phosphorus coatings by the electroless deposition technique for use as solar control coatings in architectural glazing of buildings. Electroless deposition is characterized by the autocatalytic deposition of a metal/alloy from an aqueous solution of its ions by interaction with a chemical reducing agent. The reducing agent provides electrons for the metal ions to be neutralized. The reduction is initiated by the catalyzed surface of the substrate and continued by the self catalytic activity of the deposited metal/alloy as long as the substrate is immersed in the electroless bath and operating conditions are maintained. Electroless nickel-cobalt-phosphorus thin films were deposited from a solution containing 15 g/l nickel sulphate, 5 g/l cobalt sulphate, 60 g/l ammonium citrate and 25 g/l sodium hypophosphite operating at 30 C, at a pH of 9.5 for two minutes. Electroless nickel-cobalt-phosphorus coatings are found to satisfy the basic requirements of solar control coatings. Autocatalytic deposition technique offers the possibilities of producing large area coatings with low capital investment, stability and good adhesion to glass substrates.

John, S.; Srinivasan, K.N.; Selvam, M. [Central Electrochemical Research Inst., Tamilnadu (India); Anuradha, S.; Rajendran, S. [Alagappa Univ., Tamilnadu (India). Dept. of Physics

1994-12-31T23:59:59.000Z

387

Growth, structure and electrical properties of epitaxial thulium silicide thin films on silicon  

SciTech Connect (OSTI)

Thulium silicide thin films were grown on (100) and (111) Si by evaporation of Tm metal and Si layers and annealing in a vacuum. Electron microscopy and x-ray diffraction results showed that the TmSi{sub 2{minus}x} layers are of high crystalline quality grown epitaxially on Si. Electrical resistivity measurements showed that TmSi{sub 2{minus}x} layers are metallic exhibiting magnetic ordering below 3 K. {copyright} {ital 1997 American Institute of Physics.}

Travlos, A.; Salamouras, N.; Boukos, N. [Institute of Materials Science, National Centre for Scientific Research Demokritos, Athens, (Greece) 15310] [Institute of Materials Science, National Centre for Scientific Research Demokritos, Athens, (Greece) 15310

1997-02-01T23:59:59.000Z

388

Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films  

SciTech Connect (OSTI)

The mechanisms of silicon nanocrystal structure formation in amorphous Si films have been studied for a relative Ni impurity content varying between 0.1 and 10 at. %, i.e., from a Ni doping range to the Si-Ni alloy phase. The films, deposited by the cosputtering technique at 200 deg. C, were submitted to isochronal (15 min) annealing cycles up to 800 deg. C. Four different substrates were used to deposit the studied films: crystalline (c-) quartz, c-Si, c-Ge, and glass. Both the two orders of magnitude impurity concentration range variation and the very short annealing times were selected on purpose to investigate the first steps of the mechanism leading to the appearance of crystal seeds. The conclusions of this work are the following: (a) Ni impurity induces the low-temperature crystallization of amorphous silicon; (b) the NiSi{sub 2} silicide phase mediates, at the surface or in the bulk of the film, the crystallization process; and (c) the onset of crystallization and the crystalline fraction of the samples at each temperature depend not only on the Ni impurity concentration, but also on the nature of the substrate.

Ferri, F. A.; Zanatta, A. R.; Chambouleyron, I. [Instituto de Fisica de Sao Carlos-USP, Sao Carlos 13560-250, Sao Paulo (Brazil); Instituto de Fisica Gleb Wataghin-UNICAMP, Campinas 13083-970, Sao Paulo (Brazil)

2006-11-01T23:59:59.000Z

389

18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado  

SciTech Connect (OSTI)

The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

Sopori, B. L.

2008-09-01T23:59:59.000Z

390

Temperature dependence of magnetic properties of La0.7Sr0.3MnO3SrTiO3 thin films on silicon substrates  

E-Print Network [OSTI]

by a 20-nm-thick SrTiO3 001 buffer layer. X-ray diffraction and atomic force microscopy studies. INTRODUCTION Perovskite manganites RE 1-x AE xMnO3, where RE =rare earth and AE=alkaline earth formTemperature dependence of magnetic properties of La0.7Sr0.3MnO3?SrTiO3 thin films on silicon

Boyer, Edmond

391

New Metallization Technique Suitable for 6-MW Pilot Production of Efficient Multicrystalline Solar Cells Using Upgraded Metallurgical Silicon: Final Technical Progress Report, December 17, 2007-- June 16, 2009  

Broader source: Energy.gov [DOE]

This report describes CaliSolar's work as a Photovoltaic Technology Incubator awardee within the U.S. Department of Energy's Solar Energy Technologies Program. The term of this subcontract with the National Renewable Energy Laboratory was two years. During this time, CaliSolar evolved from a handful of employees to over 100 scientists, engineers, technicians, and operators. On the technical side, the company transitioned from a proof-of-concept through pilot-scale to large-scale industrial production. A fully automated 60-megawatt manufacturing line was commissioned in Sunnyvale, California. The facility converts upgraded metallurgical-grade silicon feedstock to ingots, wafers, and high-efficiency multicrystalline solar cells.

392

Evaluation of Solar Grade Silicon Produced by the Institute of Physics and Technology: Cooperative Research and Development Final Report, CRADA Number CRD-07-211  

SciTech Connect (OSTI)

NREL and Solar Power Industries will cooperate to evaluate technology for producing solar grade silicon from industrial waste of the phosphorus industry, as developed by the Institute of Physics and Technology (IPT), Kazakhstan. Evaluation will have a technical component to assess the material quality and a business component to assess the economics of the IPT process. The total amount of silicon produced by IPT is expected to be quite limited (50 kg), so evaluations will need to be done on relatively small quantities (? 5 kg/sample).

Page, M.

2013-02-01T23:59:59.000Z

393

Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser  

SciTech Connect (OSTI)

The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-?m thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550?C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450?C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550?C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450?C, which limits the solar cell performance by n?=?2 recombination, and a performance degradation is expected due to severe shunting.

Yun, J., E-mail: j.yun@unsw.edu.au; Varalmov, S.; Huang, J.; Green, M. A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Suntech R and D Australia, Botany, New South Wales 2019 (Australia)

2014-06-16T23:59:59.000Z

394

New strategy to promote conversion efficiency using high-index nanostructures in thin-film solar cells  

E-Print Network [OSTI]

Nano-scaled metallic or dielectric structures may provide various ways to trap light into thin-film solar cells for improving the conversion efficiency. In most schemes, the textured active layers are involved into light trapping structures that can provide perfect optical benefits but also bring undesirable degradation of electrical performance. Here we propose a novel approach to design high-performance thin-film solar cells. In our strategy, a flat active layer is adopted for avoiding electrical degradation, and an optimization algorithm is applied to seek for an optimized light trapping structure for the best optical benefit. As an example, we show that the efficiency of a flat a-Si:H thin-film solar cell can be promoted close to the certified highest value. It is also pointed out that, by choosing appropriate dielectric materials with high refractive index (>3) and high transmissivity in wavelength region of 350nm-800nm, the conversion efficiency of solar cells can be further enhanced.

Wang, DongLin

2014-01-01T23:59:59.000Z

395

LAYER TRANSFER OF LARGE AREA MACROPOROUS SILICON FOR MONOCRYSTALLINE THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

. A phosphorous diffusion with a sheet resistance of 10 /sq. improves the rear contact during electrochemical

396

17.1%-Efficient Multi-Scale-Textured Black Silicon Solar Cells without Dielectric Antireflection Coating: Preprint  

SciTech Connect (OSTI)

In this work we present 17.1%-efficient p-type single crystal Si solar cells with a multi-scale-textured surface and no dielectric antireflection coating. Multi-scale texturing is achieved by a gold-nanoparticle-assisted nanoporous etch after conventional micron scale KOH-based pyramid texturing (pyramid black etching). By incorporating geometric enhancement of antireflection, this multi-scale texturing reduces the nanoporosity depth required to make silicon 'black' compared to nanoporous planar surfaces. As a result, it improves short-wavelength spectral response (blue response), previously one of the major limiting factors in 'black-Si' solar cells. With multi-scale texturing, the spectrum-weighted average reflectance from 350- to 1000-nm wavelength is below 2% with a 100-nm deep nanoporous layer. In comparison, roughly 250-nm deep nanopores are needed to achieve similar reflectance on planar surface. Here, we characterize surface morphology, reflectivity and solar cell performance of the multi-scale textured solar cells.

Toor, F.; Page, M. R.; Branz, H. M.; Yuan, H. C.

2011-07-01T23:59:59.000Z

397

AMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION  

E-Print Network [OSTI]

-based polymers (silicones) may not show this effect. Although silicones were used to encapsulate solar cells improved, which may make them suitable for encapsulating solar cells once again. We have recentlyAMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION Aarohi Vijh 1

Deng, Xunming

398

Assembly and characterization of colloid-based antireflective coatings on multicrystalline silicon solar cells  

E-Print Network [OSTI]

energy is being held back by the high prices of the photovoltaic panels. AR materials deposited by self solar cells Brian G. Prevo,{ Emily W. Hon and Orlin D. Velev* Received 4th September 2006, Accepted 10th solar cells. The nanocoatings reduced the reflectance of the solar cells by approximately 10% across

Velev, Orlin D.

399

Spin-dependent processes in amorphous silicon-rich silicon-nitride S.-Y. Lee,1  

E-Print Network [OSTI]

diodes9 and a-Si:H solar cells.10 Fol- lowing coherent manipulation of paramagnetic centers, tran- sient-band , TSAMPLE=15 K. Dark and illuminated IV curves of the p-i-n devices were measured at room temperature and T amorphous silicon nitride a-SiNx:H has been used widely as a dielectric for thin-film transistors,1 solar

McCamey, Dane

400

amorphous silicon-based solar: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

networking issues away from the programmer via ... Beal, Jacob 58 A Silicon-Based Micro Gas Turbine Engine for Power Generation CERN Preprints Summary: This paper reports on our...

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Identification and mitigation of performance-limiting defects in epitaxially grown kerfless silicon for solar cells  

E-Print Network [OSTI]

Reducing material use is a major driver for cost reduction of crystalline silicon photovoltaic modules. The dominant wafer fabrication process employed in the industry today, ingot casting & sawing, wastes approximately ...

Powell, Douglas M. (Douglas Michael)

2014-01-01T23:59:59.000Z

402

ENHANCED GROWTH RATE AND SILANE UTILIZATION IN AMORPHOUS SILICON AND NANOCRYSTALLINE-SILICON SOLAR CELL DEPOSITION VIA GAS PHASE ADDITIVES  

SciTech Connect (OSTI)

Air Products set out to investigate the impact of additives on the deposition rate of both ???µCSi and ???±Si-H films. One criterion for additives was that they could be used in conventional PECVD processing, which would require sufficient vapor pressure to deliver material to the process chamber at the required flow rates. The flow rate required would depend on the size of the substrate onto which silicon films were being deposited, potentially ranging from 200 mm diameter wafers to the 5.7 m2 glass substrates used in GEN 8.5 flat-panel display tools. In choosing higher-order silanes, both disilane and trisilane had sufficient vapor pressure to withdraw gas at the required flow rates of up to 120 sccm. This report presents results obtained from testing at Air Products?¢???? electronic technology laboratories, located in Allentown, PA, which focused on developing processes on a commercial IC reactor using silane and mixtures of silane plus additives. These processes were deployed to compare deposition rates and film properties with and without additives, with a goal of maximizing the deposition rate while maintaining or improving film properties.

Ridgeway, R.G.; Hegedus, S.S.; Podraza, N.J.

2012-08-31T23:59:59.000Z

403

The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer.  

SciTech Connect (OSTI)

The unique combination of thermo-mechanical and physiochemical properties of silicon carbide (SiC) provides interest and opportunity for its use in nuclear applications. One of the applications of SiC is as a very thin layer in the TRi-ISOtropic (TRISO) coated fuel particles for high temperature gas reactors (HTGRs). This SiC layer, produced by chemical vapor deposition (CVD), is designed to withstand the pressures of fission and transmutation product gases in a high temperature, radiation environment. Various researchers have demonstrated that macroscopic properties can be affected by changes in the distribution of grain boundary plane orientations and misorientations [1 - 3]. Additionally, various researchers have attributed the release behavior of Ag through the SiC layer as a grain boundary diffusion phenomenon [4 - 6]; further highlighting the importance of understanding the actual grain characteristics of the SiC layer. Both historic HTGR fission product release studies and recent experiments at Idaho National Laboratory (INL) [7] have shown that the release of Ag-110m is strongly temperature dependent. Although the maximum normal operating fuel temperature of a HTGR design is in the range of 1000-1250C, the temperature may reach 1600C under postulated accident conditions. The aim of this specific study is therefore to determine the magnitude of temperature dependence on SiC grain characteristics, expanding upon initial studies by Van Rooyen et al, [8; 9].

Isabella J van Rooyen; Philippus M van Rooyen; Mary Lou Dunzik-Gougar

2013-08-01T23:59:59.000Z

404

Thin Solid Films 430 (2003) 125129 0040-6090/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved.  

E-Print Network [OSTI]

for a-Si:H solar cell fabrication. In addition to photovoltaic applications, a-Si:H is also used of amorphous silicon (a-Si:H)-based photovoltaic devices, it is important to deposit high- quality a progress has been made in hydrogenated amorphous silicon (a-Si:H)-based thin film photovoltaic devices

Deng, Xunming

405

Structural, electrical, and thermoelectric properties of bismuth telluride: Silicon/carbon nanocomposites thin films  

SciTech Connect (OSTI)

In this study, the effect of the presence of secondary phases on the structural, electrical, and thermoelectric properties of nanocomposite Bi{sub 2}Te{sub 3} films prepared by co-sputtering of silicon and carbon with Bi{sub 2}Te{sub 3} has been investigated. Growth temperature and the presence of Si and C phase are observed to have a strong effect on the topography and orientation of crystallites. X-ray diffraction study demonstrates that Bi{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}:C samples have preferred (0 0 15) orientation in comparison to Bi{sub 2}Te{sub 3}:Si sample, which have randomly oriented crystallites. Atomic force, conducting atomic force, and scanning thermal microscopy analysis show significant differences in topographical, electrical, and thermal conductivity contrasts in Bi{sub 2}Te{sub 3}:Si and Bi{sub 2}Te{sub 3}:C samples. Due to the randomly oriented crystallites and the presence of Si along the crystallite boundaries, appreciable Seebeck coefficient, higher electrical conductivity, and lower thermal conductivity is achieved resulting in relatively higher value of power factor (3.71 mW K{sup ?2} m{sup ?1}) for Bi{sub 2}Te{sub 3}:Si sample. This study shows that by incorporating a secondary phase along crystallite boundaries, microstructural, electrical, and thermoelectric properties of the composite samples can be modified.

Agarwal, Khushboo; Mehta, B. R., E-mail: brmehta@physics.iitd.ac.in [Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)

2014-08-28T23:59:59.000Z

406

Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance  

SciTech Connect (OSTI)

We report on CdS/CdTe photovoltaic devices that contain a thin Ta2O5 film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta2O5 films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta2O5 interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta2O5 interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.

Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor

2012-05-05T23:59:59.000Z

407

Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics  

E-Print Network [OSTI]

energy sources, the potential of solar energy is the mostuse of solar cells as an energy source [2]. Therefore, thinspread use of solar cells as a renewable energy source [2].

Chung, Choong-Heui

2012-01-01T23:59:59.000Z

408

Pulsed energy synthesis and doping of silicon carbide  

DOE Patents [OSTI]

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

1995-06-20T23:59:59.000Z

409

Pulsed energy synthesis and doping of silicon carbide  

DOE Patents [OSTI]

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Thompson, Jesse B. (Brentwood, CA); Sigmon, Thomas W. (Beaverton, OR)

1995-01-01T23:59:59.000Z

410

Fabrication of ultra thin CdS/CdTe solar cells by magnetron sputtering.  

E-Print Network [OSTI]

?? CdTe is a nearly perfect absorber material for second generation polycrystalline solar cells because the bandgap closely matches the peak of the solar spectrum, (more)

Plotnikov, Victor

2009-01-01T23:59:59.000Z

411

Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs...  

Broader source: Energy.gov (indexed) [DOE]

the advantages of scaled-up designs and more energy-efficient production, making solar energy a more affordable alternative," Ekern says. "Moreover, making step changes in...

412

Amorphous silicon solar cells. Quarterly report No. 1, 1 October 1980-31 December 1980  

SciTech Connect (OSTI)

Progress is reported on the following: theoretical modeling, deposition and doping studies, experimental methods for the characterization of a-Si:H, formation of solar-cell structures, theoretical and experimental evaluation of solar-cell parameters, and stability studies. (MHR)

Carlson, D.E.; Balberg, I.; Crandall, R.S.; Dresner, J.; Goldstein, B.; Hanak, J.J.; Schade, H.E.; Staebler, D.L.; Weakliem, H.A.

1981-02-01T23:59:59.000Z

413

Producing Solar Cells By Surface Preparation For Accelerated Nucleation Of Microcrystalline Silicon On Heterogeneous Substrates.  

DOE Patents [OSTI]

Attractive multi-junction solar cells and single junction solar cells with excellent conversion efficiency can be produced with a microcrystalline tunnel junction, microcrystalline recombination junction or one or more microcrystalline doped layers by special plasma deposition processes which includes plasma etching with only hydrogen or other specified etchants to enhance microcrystalline growth followed by microcrystalline. nucleation with a doped hydrogen-diluted feedstock.

Yang, Liyou (Plainsboro, NJ); Chen, Liangfan (Langhorne, PA)

1998-03-24T23:59:59.000Z

414

Back-side hydrogenation technique for defect passivation in silicon solar cells  

DOE Patents [OSTI]

A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts.

Sopori, Bhushan L. (Denver, CO)

1994-01-01T23:59:59.000Z

415

Back-side hydrogenation technique for defect passivation in silicon solar cells  

DOE Patents [OSTI]

A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts. 3 figures.

Sopori, B.L.

1994-04-19T23:59:59.000Z

416

Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual subcontract report, April 1, 1994--March 31, 1995  

SciTech Connect (OSTI)

Transparent and reflecting electrodes are important parts of the structure of amorphous silicon solar cells. We report improved methods for depositing zinc oxide, deposition of tin nitride as a potential reflection-enhancing diffusion barrier between the a-Si and back metal electrodes. Highly conductive and transparent fluorine-doped zinc oxide was successfully produced on small areas by atmospheric pressure CVD from a less hazardous zinc precursor, zinc acetylacetonate. The optical properties measured for tin nitride showed that the back-reflection would be decreased if tin nitride were used instead of zinc oxide as a barrier layer over silver on aluminum. Niobium-doped titanium dioxide was produced with high enough electrical conductivity so that normal voltages and fill factors were obtained for a-Si cells made on it.

Gordon, R.G. [Harvard Univ., Cambridge, MA (United States)

1995-10-01T23:59:59.000Z

417

Temperature-Dependent Photoluminescence Imaging and Characterization of a Multi-Crystalline Silicon Solar Cell Defect Area: Preprint  

SciTech Connect (OSTI)

Photoluminescence (PL) imaging is used to detect areas in multi-crystalline silicon that appear dark in band-to-band imaging due to high recombination. Steady-state PL intensity can be correlated to effective minority-carrier lifetime, and its temperature dependence can provide additional lifetime-limiting defect information. An area of high defect density has been laser cut from a multi-crystalline silicon solar cell. Both band-to-band and defect-band PL imaging have been collected as a function of temperature from ~85 to 350 K. Band-to-band luminescence is collected by an InGaAs camera using a 1200-nm short-pass filter, while defect band luminescence is collected using a 1350-nm long pass filter. The defect band luminescence is characterized by cathodo-luminescence. Small pieces from adjacent areas within the same wafer are measured by deep-level transient spectroscopy (DLTS). DLTS detects a minority-carrier electron trap level with an activation energy of 0.45 eV on the sample that contained defects as seen by imaging.

Johnston, S.; Yan, F.; Li, J.; Romero, M. J.; Al-Jassim, M.; Zaunbrecher, K.; Sidelkheir, O.; Blosse, A.

2011-07-01T23:59:59.000Z

418

Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles  

SciTech Connect (OSTI)

We have reported a method to enhance the performance of graphene-Si (Gr/Si) Schottky junction solar cells by introducing Au nanoparticles (NPs) onto the monolayer graphene and few-layer graphene. The electron transfer between Au NPs and graphene leads to the increased work function and enhanced electrical conductivity of graphene, resulting in a remarkable improvement of device efficiency. By optimizing the initial thickness of Au layers, the power conversion efficiency of Gr/Si solar cells can be increased by more than three times, with a maximum value of 7.34%. These results show a route for fabricating efficient and stable Gr/Si solar cells.

Liu, X.; Zhang, X. W., E-mail: xwzhang@semi.ac.cn; Yin, Z. G.; Meng, J. H.; Gao, H. L.; Zhang, L. Q.; Zhao, Y. J.; Wang, H. L. [Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083 (China)

2014-11-03T23:59:59.000Z

419

Experimental optimization of an anisotropic etching process for random texturization of silicon solar cells  

SciTech Connect (OSTI)

A multifactor experimental investigation of silicon surface texturing was conducted in Sandia's Photovoltaic Device Fabrication Laboratory using aqueous potassium-hydroxide (KOH) solutions with isopropyl alcohol (IPA) added as a complexing agent. Czochralski, magnetic-Czochralski, and float-zone silicon wafers of different resistivities with both polished and lapped surfaces were included in the experiment. Process variables considered were solution temperature, time in solution, degree of mechanical mixing, KOH concentration, and IPA concentration. Using hemispherical reflectance as the primary gauge of success, process variables were identified that resulted in an effective surface texture with reflectance less than 12% prior to anti-reflection coating. Of particular interest was a low temperature (70 {degrees}C) process with less than 2% concentration of both KOH and IPA and wide process variable tolerances. 6 refs., 6 figs., 1 tab.

King, D.L.; Buck, M.E.

1991-01-01T23:59:59.000Z

420

Efficient Crystalline Si Solar Cell with Amorphous/Crystalline Silicon Heterojunction as Back Contact: Preprint  

SciTech Connect (OSTI)

We study an amorphous/crystalline silicon heterojunction (Si HJ) as a back contact in industrial standard p-type five-inch pseudo-square wafer to replace Al back surface field (BSF) contact. The best efficiency in this study is over 17% with open-circuit (Voc) of 0.623 V, which is very similar to the control cell with Al BSF. We found that Voc has not been improved with the heterojunction structure in the back. The typical minority carrier lifetime of these wafers is on the order of 10 us. We also found that the doping levels of p-layer affect the FF due to conductivity and band gap shifting, and an optimized layer is identified. We conclude that an amorphous/crystalline silicon heterojunction can be a very promising structure to replace Al BSF back contact.

Nemeth, B.; Wang, Q.; Shan, W.

2012-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Silicon on insulator with active buried regions  

DOE Patents [OSTI]

A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

McCarthy, Anthony M. (Menlo Park, CA)

1998-06-02T23:59:59.000Z

422

Silicon on insulator with active buried regions  

DOE Patents [OSTI]

A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

McCarthy, A.M.

1996-01-30T23:59:59.000Z

423

Silicon on insulator with active buried regions  

DOE Patents [OSTI]

A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

McCarthy, Anthony M. (Menlo Park, CA)

1996-01-01T23:59:59.000Z

424

Silicon on insulator with active buried regions  

DOE Patents [OSTI]

A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

McCarthy, A.M.

1998-06-02T23:59:59.000Z

425

Thermal Management of Solar Cells  

E-Print Network [OSTI]

Nanostructured Silicon- Based Solar Cells, 2013. X. C. Tong,heat exchangers, and solar cells," Sci-Tech News, vol. 65,in crystalline silicon solar cells," Renewable Energy, vol.

Saadah, Mohammed Ahmed

2013-01-01T23:59:59.000Z

426

The correlation of open-circuit voltage with bandgap in amorphous silicon-based {ital pin} solar cells  

SciTech Connect (OSTI)

We briefly review the correlation of open-circuit voltages {ital V}{sub OC} with the bandgap of the intrinsic layer in amorphous silicon based {ital pin} solar cells. We discuss two mechanisms which limit {ital V}{sub OC}: intrinsic layer recombination, and the built-in potential {ital V}{sub BI}. In particular we discuss Li{close_quote}s proposal that the open-circuit voltages in higher bandgap cells ({ital E}{sub G}{gt}1.9 eV) are {ital V}{sub BI}-limited. Based on computer simulations of {ital pin} solar cells we propose that {ital V}{sub BI} limitation occurs when the recombination limit to {ital V}{sub OC} exceeds the cell{close_quote}s field-reversal voltage {ital V}{sub R}. For {ital a}-Si:H based cells this field-reversal voltage occurs at about {ital V}{sub BI}-0.3 V. This proposal would account for the observation that {ital V}{sub BI} limitation occurs for {ital V}{sub OC} significantly smaller than {ital V}{sub BI}. {copyright} {ital 1996 American Institute of Physics.}

Crandall, R.S. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Schiff, E.A. [Department of Physics, Syracuse University, Syracuse, New York 13244-1130 (United States)

1996-01-01T23:59:59.000Z

427

Excellent Passivation and Low Reflectivity Al2O3/TiO2 Bilayer Coatings for n-Wafer Silicon Solar Cells: Preprint  

SciTech Connect (OSTI)

A bilayer coating of Al2O3 and TiO2 is used to simultaneously achieve excellent passivation and low reflectivity on p-type silicon. This coating is targeted for achieving high efficiency n-wafer Si solar cells, where both passivation and anti-reflection (AR) are needed at the front-side p-type emitter. It could also be valuable for front-side passivation and AR of rear-emitter and interdigitated back contact p-wafer cells. We achieve high minority carrier lifetimes {approx}1 ms, as well as a nearly 2% decrease in absolute reflectivity, as compared to a standard silicon nitride AR coating.

Lee, B. G.; Skarp, J.; Malinen, V.; Li, S.; Choi, S.; Branz, H. M.

2012-06-01T23:59:59.000Z

428

High Efficiency CdTe/CdS Thin Film solar Cells by a Process Suitable for Large Scale Production. N. Romeo, A. Bosio, A. Romeo, M. Bianucci, L. Bonci, C. Lenti  

E-Print Network [OSTI]

High Efficiency CdTe/CdS Thin Film solar Cells by a Process Suitable for Large Scale Production. N-mail:Nicola.Romeo@fis.unipr.it ABSTRACT: It has been demonstrated that CdTe/CdS thin film solar cells can exhibit an efficiency around 16 Film. 1 INTRODUCTION CdTe/CdS thin film solar cells have a good possibility to be produced on large

Romeo, Alessandro

429

Semiconductor heterostructures and optimization of light-trapping structures for efficient thin-film solar cells  

E-Print Network [OSTI]

applications. However, one of the most persistent issues in solar cell design continues to be how to most and integration of active and passive media in solar cells. Myriad photonic structures containing sub of semiconductor nanostructures have inspired a host of new solar cell structures, including designs based

Yu, Edward T.

430

Manipulating hybrid structures of polymer/a-Si for thin film solar cells  

SciTech Connect (OSTI)

A series of uniform polymer/amorphous silicon hybrid structures have been fabricated by means of solution-casting for polymer and radio frequency excited plasma enhanced chemical vapour deposition for amorphous silicon (a-Si:H). Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) functioned as a photoactive donor, while the silicon layer acted as an acceptor. It is found that matching the hole mobility of the polymer to the electron mobility of amorphous silicon is critical to improve the photovoltaic performance from hybrid cells. A three-layer p-i-n structure of ITO/PEDOT:PSS(200?nm)/i-Si(450?nm)/n-Si(200?nm)/Al with a power conversion efficiency of 4.78% under a standard test condition was achieved.

Peng, Ying; He, Zhiqun, E-mail: zhqhe@bjtu.edu.cn, E-mail: J.I.B.Wilson@hw.ac.uk; Zhang, Zhi; Liang, Chunjun [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Diyaf, Adel; Ivaturi, Aruna; Wilson, John I. B., E-mail: zhqhe@bjtu.edu.cn, E-mail: J.I.B.Wilson@hw.ac.uk [SUPA, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)

2014-03-10T23:59:59.000Z

431

Fabrication of contacts for silicon solar cells including printing burn through layers  

DOE Patents [OSTI]

A method for fabricating a contact (240) for a solar cell (200). The method includes providing a solar cell substrate (210) with a surface that is covered or includes an antireflective coating (220). For example, the substrate (210) may be positioned adjacent or proximate to an outlet of an inkjet printer (712) or other deposition device. The method continues with forming a burn through layer (230) on the coating (220) by depositing a metal oxide precursor (e.g., using an inkjet or other non-contact printing method to print or apply a volume of liquid or solution containing the precursor). The method includes forming a contact layer (240) comprising silver over or on the burn through layer (230), and then annealing is performed to electrically connect the contact layer (240) to the surface of the solar cell substrate (210) through a portion of the burn through layer (230) and the coating (220).

Ginley, David S; Kaydanova, Tatiana; Miedaner, Alexander; Curtis, Calvin J; Van Hest, Marinus Franciscus Antonius Maria

2014-06-24T23:59:59.000Z

432

Optical properties of nanostructured silicon-rich silicon dioxide  

E-Print Network [OSTI]

We have conducted a study of the optical properties of sputtered silicon-rich silicon dioxide (SRO) thin films with specific application for the fabrication of erbium-doped waveguide amplifiers and lasers, polarization ...

Stolfi, Michael Anthony

2006-01-01T23:59:59.000Z

433

Alta Devices Develops World Record Setting Thin-Film Solar Cell  

Office of Energy Efficiency and Renewable Energy (EERE)

EERE supported the development of Alta Devices' thin film Gallium Arsenide photovoltaic technology that set a world record for conversion efficiency.

434

Beyond Silicon: Cutting the Costs of Solar Power | U.S. DOE Office of Science (SC)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth (AOD)ProductssondeadjustsondeadjustAboutScienceCareers Apply for a JobBernardtheBeyond Silicon: Cutting the

435

Simulation of nanostructure-based and ultra-thin film solar cell devices beyond the classical picture  

E-Print Network [OSTI]

In this paper, an optoelectronic device simulation framework valid for arbitrary spatial variation of electronic potentials and optical modes, and for transport regimes ranging from ballistic to diffusive, is used to study non-local photon absorption, photocurrent generation and carrier extraction in ultra-thin film and nanostructure-based solar cell devices at the radiative limit. Among the effects that are revealed by the microscopic approach and which are inaccessible to macroscopic models is the impact of structure, doping or bias induced nanoscale potential variations on the local photogeneration rate and the photocarrier transport regime.

Aeberhard, Urs

2014-01-01T23:59:59.000Z

436

Absorber processing issues in high-efficiency, thin-film Cu(In,Ga)Se{sub 2}-based solar cells  

SciTech Connect (OSTI)

Three approaches to thin-film Cu(In,Ga)Se{sub 2} absorber fabrication are considered. They are generically described in terms of the sequential or concurrent nature of source material delivery, selenium delivery, and compound formation. A two-stage evaporation process successfully produced the absorber component of a world-record, 17.1{percent} efficient solar cell. Alternative approaches that reduce the requirements for high substrate temperatures are considered. The relationship between absorber process parameters, band gap profile, and device performance are examined. Engineering the [Ga]/([Ga]+[In]) profile in the absorber has led to the reported advances. {copyright} {ital 1996 American Institute of Physics.}

Tuttle, J.R.; Gabor, A.M.; Contreras, M.A.; Tennant, A.L.; Ramanathan, K.R.; Franz, A.; Matson, R.; Noufi, R. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

1996-01-01T23:59:59.000Z

437

European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2AO.2.3 EFFECT OF SiN DEPOSITION TEMPERATURE ON SURFACE PASSIVATION OF N-TYPE CZ SILICON  

E-Print Network [OSTI]

25th European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2AO.2N deposition leads to increasing the hydrogen content of the SiN layers. This improves the supply of hydrogen silicon using thermally grown oxide or amorphous films based on hydrogenated silicon compounds has been

438

Simulation of Large-Area Silicon Solar Cells1 Gernot Heiser2  

E-Print Network [OSTI]

from the Australian Research Council (ARC). The Centre for Photovoltaic Devices and Systems, fax: +61 2 385 5995, e-mail: G.Heiser@unsw.edu.au 3 Centre for Photovoltaic Devices and Systems, tel to produce an accurate model of a full-sized high-efficiency solar cell. We demon- strate the power

New South Wales, University of

439

Plasma polymerization of C[subscript 4]F[subscript 8] thin film on high aspect ratio silicon molds  

E-Print Network [OSTI]

High aspect ratio polymeric micro-patterns are ubiquitous in many fields ranging from sensors, actuators, optics, fluidics and medical. Second generation PDMS molds are replicated against first generation silicon molds ...

Yeo, L. P.

440

Synchrotron-based investigations of the nature and impact of ironcontamination in multicrystalline silicon solar cell materials  

SciTech Connect (OSTI)

Synchrotron-based microprobe techniques were used to obtain precise and systematic information about the size distribution, spatial distribution, shape, electrical activity, and chemical states of iron-rich impurity clusters in multicrystalline silicon materials used for cost-effective solar cells. These experimentally observed properties of iron-rich clusters allow one to derive conclusions about the origins of iron contamination, the mechanisms for incorporating large amounts of Fe into mc-Si, quantitative information about the distribution of Fe in mc-Si and the impacts of such contamination on solar cell performance. Two distinct groups of iron-rich clusters have been identified in both materials: (a) the occasional large (diameter greater than or equal to 1 mu-m) particles, either oxidized and/or present with multiple other metal species reminiscent of stainless steels or ceramics, which are believed to originate from a foreign source such as the growth surfaces, production equipment, or feedstock, and (b) the more numerous, homogeneously distributed, and smaller iron silicide precipitates (dia. less than or equal to 800 nm, often < 100 nm), originating from a variety of possible formation mechanisms involving atomically dissolved iron in the melt or in the crystal. It was found that iron silicide nanoprecipitates account for bulk Fe concentrations as high as 1014-15cm-3 and can have a large negative impact on device performance because of their homogeneous distribution along structural defects. The large (dia. greater than or equal to 1 mu-m) particles, while containing elevated amounts of metals, are low in spatial density and thus deemed to have a low direct impact on device performance, although they may have a large indirect impact via the dissolution of Fe, thus assisting the formation of iron silicide nanoprecipitates. These results demonstrate that it is not necessarily the total Fe content that limits mc-Si device performance, but the distribution of Fe within the material.

Buonassisi, Tonio; Istratov, Andrei A.; Heuer, Matthias; Marcus,Matthew A.; Jonczyk, Ralf; Lai, Barry; Cai, Zhonghou; Heald, Steven; Warta, Wilhelm; Isenberg, Joerg; Schindler, Roland; Weber, Eicke R.

2004-11-08T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Development of CdTe thin film solar cells on flexible foil substrates.  

E-Print Network [OSTI]

??Cadmium telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal band gap of 1.45 eV, its high optical absorption (more)

Hodges, Deidra Ranel

2009-01-01T23:59:59.000Z

442

CdTe/CdS Thin Film Solar Cells Fabricated on Flexible Substrates.  

E-Print Network [OSTI]

??Cadmium Telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal bandgap of 1.45 eV and its high optical absorption (more)

Palekis, Vasilios

2011-01-01T23:59:59.000Z

443

Development of low cost contacts to silicon solar cells. Final report, 15 October 1978-30 April 1980  

SciTech Connect (OSTI)

A summary of work done on the development of a copper based contact system for silicon solar cells is presented. The work has proceeded in three phases: (1) Development of a copper based contact system using plated Pd-Cr-Cu. Good cells were made but cells degraded under low temperature (300/sup 0/C) heat treatments. (2) The degradation in Phase I was identified as copper migration into the cells junction region. A paper study was conducted to find a proper barrier to the copper migration problem. Nickel was identified as the best candidate barrier and this was verified in a heat treatment study using evaporated metal layers. (3) An electroless nickel solution was substituted for the electroless chrominum solution in the original process. Efforts were made to replace the palladium bath with an appropriate nickel layer, but these were unsuccessful. 150 cells using the Pd-Ni-Cu contact system were delivered to JPL. Also a cost study was made on the plating process to assess the chance of reaching 5 cents/watt.

Tanner, D.P.; Iles, P.A.

1980-01-01T23:59:59.000Z

444

amorphous silicon carbon: Topics by E-print Network  

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Ph. Emplit; S. Massar 2011-02-04 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

445

amorphous silicon film: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

values previously Hellman, Frances 8 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

446

amorphous hydrogenated silicon: Topics by E-print Network  

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Gunther; Baets, Roel 2011-01-01 36 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

447

amorphous silicon epid: Topics by E-print Network  

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Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

448

amorphous silicon arrays: Topics by E-print Network  

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amorphous carbon Wang, Zhong L. 8 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

449

amorphous silicon alloy: Topics by E-print Network  

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Ph. Emplit; S. Massar 2011-02-04 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

450

amorphous silicon studied: Topics by E-print Network  

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Yang, Cheng-Chieh 2012-01-01 22 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

451

amorphous silicon films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

values previously Hellman, Frances 8 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

452

amorphous silicon sensor: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

453

amorphous silicon nanoparticles: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

454

amorphous silicon alloys: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

455

amorphous silicon tft: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 20 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

456

amorphous silicon photovoltaic: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

properties Mazur, Eric 20 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

457

amorphous silicon final: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

458

amorphous silicon diodes: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

459

amorphous silicon surfaces: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 10 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

460

amorphous silicon technology: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

technologies is presented. Then 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

amorphous silicon electronic: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

technologies is presented. Then 22 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

462

amorphous silicon dioxide: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 8 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

463

amorphous silicon oxynitride: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 15 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

464

amorphous silicon schottky: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 13 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

465

amorphous silicon nitride: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Paris-Sud XI, Universit de 26 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

466

amorphous silicon layers: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 16 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

467

amorphous silicon detector: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

468

area amorphous silicon: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

469

amorphous silicon measured: Topics by E-print Network  

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Ph. Emplit; S. Massar 2011-02-04 13 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

470

amorphous silicon deposited: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 23 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

471

amorphous silicon flat: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

472

amorphous silicon modules: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 10 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

473

amorphous silicon sensors: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

474

amorphous silicon carbonitride: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

475

amorphous silicon research: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

476

amorphous silicon prepared: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Nominanda, Helinda 2008-10-10 10 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

477

amorphous silicon microdisk: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 24 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

478

amorphous silicon germanium: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(Si-I or Ge Wang, Wei Hua 37 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

479

amorphous silicon radiation: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

480

amorphous silicon pixel: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ph. Emplit; S. Massar 2011-02-04 14 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Bioinspired Molecular Co-Catalysts Bonded to a Silicon Photocathode for Solar Hydrogen Evolution  

SciTech Connect (OSTI)

The production of fuels from sunlight represents one of the main challenges in the development of a sustainable energy system. Hydrogen is the simplest fuel to produce and although platinum and other noble metals are efficient catalysts for photoelectrochemical hydrogen evolution earth-abundant alternatives are needed for large-scale use. We show that bioinspired molecular clusters based on molybdenum and sulphur evolve hydrogen at rates comparable to that of platinum. The incomplete cubane-like clusters (Mo{sub 3}S{sub 4}) efficiently catalyse the evolution of hydrogen when coupled to a p-type Si semiconductor that harvests red photons in the solar spectrum. The current densities at the reversible potential match the requirement of a photoelectrochemical hydrogen production system with a solar-to-hydrogen efficiency in excess of 10% (ref. 16). The experimental observations are supported by density functional theory calculations of the Mo{sub 3}S{sub 4} clusters adsorbed on the hydrogen-terminated Si(100) surface, providing insights into the nature of the active site.

Hou, Yidong

2011-11-08T23:59:59.000Z

482

Array automated assembly task low cost silicon solar array project. Phase 2. Final report  

SciTech Connect (OSTI)

The initial contract was a Phase II Process Development for a process sequence, but with concentration on two particular process steps: laserscribing and spray-on junction formation. The add-on portion of the contract was to further develop these tasks, to incorporate spray-on of AR Coating and aluminum and to study the application of microwave energy to solar cell fabrication. The overall process cost projection is 97.918 cents/Wp. The major contributor to this excess cost is the module encapsulation materials cost. During the span of this contract the study of microwave application to solar cell fabrication produced the ability to apply this technique to any requirement of 600/sup 0/C or less. Above this temperature, non-uniformity caused the processing to be unreliable. The process sequence is described in detail, and a SAMICS cost analysis for each valid process step studied is presented. A temporary catalog for expense items is included, and engineering specifications for the process steps are given. (WHK)

Olson, Clayton

1980-12-01T23:59:59.000Z

483

E-Print Network 3.0 - area multicrystalline silicon Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SILICON SOLAR CELLS K. Bothe1,a) , D... ABSTRACT: We report on studies of the emission of light from industrial multicrystalline silicon solar... a broad wavelength distribution...

484

Light trapping in thin film solar cells using textured photonic crystal  

DOE Patents [OSTI]

A solar cell includes a photoactive region that receives light. A photonic crystal is coupled to the photoactive region, wherein the photonic crystal comprises a distributed Bragg reflector (DBR) for trapping the light.

Yi, Yasha (Somerville, MA); Kimerling, Lionel C. (Concord, MA); Duan, Xiaoman (Amesbury, MA); Zeng, Lirong (Cambridge, MA)

2009-01-27T23:59:59.000Z

485

Barrier Coatings for Thin Film Solar Cells: Final Subcontract Report, September 1, 2002 -- January 30, 2008  

SciTech Connect (OSTI)

This program has involved investigations of the stability of CdTe and copper-indium-gallium-diselenide (CIGS) solar cells under damp heat conditions and effects of barrier coatings.

Olsen, L. C.

2010-03-01T23:59:59.000Z

486

Thin Ni silicide formation by low temperature-induced metal atom reaction with ion implanted amorphous silicon  

SciTech Connect (OSTI)

We have extended our recent work on buried silicide formation by Ni diffusion into a buried amorphous silicon layer to the case where silicide formation is at lower temperatures on silicon substrates which have been preamorphized. The reaction of metal atoms from a 12 nm Ni film evaporated on top of a 65 nm thick surface amorphous layer formed by 35 keV Si{sup +} ion implantation has been investigated at temperature {le}400C. Rutherford Backscattering Spectrometry (RBS) with channeling, cross-sectional transmission electron microscopy (XTEM), x-ray diffraction and four-point-probe measurements were used to determine structure, interfacial morphology, composition and resistivity of the silicide films. It has been found that an increased rate of silicidation occurs for amorphous silicon with respect to crystalline areas permitting a selective control of the silicon area to be contacted during silicide growth. Vacuum furnace annealing at 360C for 8 hours followed by an additional step at 400C for one hour produces a continuos NiSi{sub 2} layer with a resistivity 44 {mu}{Omega} cm.

Erokhin, Yu.N.; Pramanick, S.; Hong, F.; Rozgonyi, G.A. [North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering; Patnaik, B.K. [North Carolina State Univ., Raleigh, NC (United States)

1992-12-31T23:59:59.000Z

487

Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon  

E-Print Network [OSTI]

silicate dielectric films on silicon J. J. Chambers Department of Chemical Engineering, North Carolina indicates that the yttrium silicate films are amorphous with uniform contrast throughout the layer. MEIS (10 ?) SiO2 film and oxidized, a yttrium silicate film is formed with bonding and composition similar

Garfunkel, Eric

488

Solar Energy Materials & Solar Cells 91 (2007) 17261732 Optical and structural properties of Ta2O5CeO2 thin films  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 91 (2007) 1726­1732 Optical and structural properties of Ta2O5

Thirumalai, Devarajan

489

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas in Substitution of CdCl2  

E-Print Network [OSTI]

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas delle Scienze, 37/A-43010 Fontanini, Parma, Italy ABSTRACT: CdTe/CdS thin film solar cells have reached in the preparation of high efficiency CdTe/CdS solar cells is the activation treatment of CdTe film. Most research

Romeo, Alessandro

490

CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar  

E-Print Network [OSTI]

CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar 1 , Parag). i:ZnO/Al:ZnO transparent and conducting window bilayer was deposited by RF magnetron sputtering

Sites, James R.

491

Defect physics of the kesterite thin-film solar cell absorber Cu2ZnSnS4 Shiyou Chen,1,2  

E-Print Network [OSTI]

Defect physics of the kesterite thin-film solar cell absorber Cu2ZnSnS4 Shiyou Chen,1,2 X. G. Gong Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China 2 Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241, People's Republic of China 3

Gong, Xingao

492

THINNING OF THE SUN'S MAGNETIC LAYER: THE PECULIAR SOLAR MINIMUM COULD HAVE BEEN PREDICTED  

SciTech Connect (OSTI)

The solar magnetic activity cycle causes changes in the Sun on timescales that are equivalent to human lifetimes. The minimum solar activity that preceded the current solar cycle (cycle 24) was deeper and quieter than any other recent minimum. Using data from the Birmingham Solar Oscillations Network (BiSON), we show that the structure of the solar sub-surface layers during the descending phase of the preceding cycle (cycle 23) was very different from that during cycle 22. This leads us to believe that a detailed examination of the data would have led to the prediction that the cycle 24 minimum would be out of the ordinary. The behavior of the oscillation frequencies allows us to infer that changes in the Sun that affected the oscillation frequencies in cycle 23 were localized mainly to layers above about 0.996 R{sub Sun }, depths shallower than about 3000 km. In cycle 22, on the other hand, the changes must have also occurred in the deeper-lying layers.

Basu, Sarbani [Department of Astronomy, Yale University, P.O. Box 208101, New Haven, CT 06520-8101 (United States); Broomhall, Anne-Marie; Chaplin, William J.; Elsworth, Yvonne, E-mail: sarbani.basu@yale.edu [School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham, B15 2TT (United Kingdom)

2012-10-10T23:59:59.000Z

493

assisted silicon dioxide: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

dioxide substrates is described. The approach consists of solid such as displays and thin-film polycrystalline solar cells. Particularly important for low- cost thin-film solar...

494

Broadband absorption enhancement in ultra-thin crystalline Si solar cells by incorporating metallic and dielectric nanostructures in the back reflector  

E-Print Network [OSTI]

We propose a back-reflecting scheme in order to enhance the maximum achievable current in one micron thick crystalline silicon solar cells. We perform 3-dimensional numerical investigations of the scattering properties of metallic nanostructures located at the back side, and optimize them for enhancing absorption in the silicon layer. We validate our numerical results experimentally and also compare the absorption enhancement in the solar cell structure, both with quasi-periodic and random metallic nanostructures. We have looked at the interplay between the metallic nanostructures and an integrated back-reflector. We show that the combination of metallic nanoparticles and a metallic reflector results in significant parasitic absorption. We compared this to another implementation based on titanium dioxide nanoparticles which act as a lambertian reflector of light. Our simulation and experimental results show that this proposed configuration results in reduced absorption losses and in broadband enhancement of a...

Jain, Samart; Miljkovic, Vladimir D; Dmitriev, Alexamder; Trompoukis, Christos; Gordon, Ivan; van Dorpe, Pol; Daif, Ounsi El

2013-01-01T23:59:59.000Z

495

.beta.-silicon carbide protective coating and method for fabricating same  

DOE Patents [OSTI]

A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or .mu.c-SiC film on the surface and produce .beta.--SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface.

Carey, Paul G. (Mountain View, CA); Thompson, Jesse B. (Brentwood, CA)

1994-01-01T23:59:59.000Z

496

[beta]-silicon carbide protective coating and method for fabricating same  

DOE Patents [OSTI]

A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating are disclosed. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or [mu]c-SiC film on the surface and produce [beta]-SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface. 3 figs.

Carey, P.G.; Thompson, J.B.

1994-11-01T23:59:59.000Z

497

Innovative Characterization of Amorphous and Thin-Film Silicon for Improved Module Performance: 28 April 2005 - 15 September 2008  

SciTech Connect (OSTI)

This report focuses on (1) characterizing nc-Si:H from United Solar; (2) studying Si,Ge:H alloys deposited by HWCVD; and (3) characterizing CIGS films and relating to cell performance parameters.

Cohen, J. D.

2009-12-01T23:59:59.000Z

498

Atmospheric Pressure Chemical Vapor Deposition of High Silica SiO2-TiO2 Antireflective Thin Films for Glass Based Solar Panels  

SciTech Connect (OSTI)

The atmospheric pressure chemical vapor deposition (APCVD) of SiO2-TiO2 thin films employing [[(tBuO)3Si]2O-Ti(OiPr)2], which can be prepared from commercially available materials, results in antireflective thin films on float glass under industrially relevant manufacturing conditions. It was found that while the deposition temperature had an effect on the SiO2:TiO2 ratio, the thickness was dependent on the time of deposition. This study shows that it is possible to use APCVD employing a single source precursor containing titanium and silicon to produce thin films on float glass with high SiO2:TiO2 ratios.

Klobukowski, Erik R [ORNL; Tenhaeff, Wyatt E [ORNL; McCamy, James [PPG; Harris, Caroline [PPG; Narula, Chaitanya Kumar [ORNL

2013-01-01T23:59:59.000Z

499

TRIPLE-JUNCTION A-SI SOLAR CELLS WITH HEAVILY DOPED THIN INTERFACE LAYERS AT THE TUNNEL W. Wang, H. Povolny, W. Du, X.B. Liao and X. Deng  

E-Print Network [OSTI]

TRIPLE-JUNCTION A-SI SOLAR CELLS WITH HEAVILY DOPED THIN INTERFACE LAYERS AT THE TUNNEL JUNCTIONS W of Toledo, Toledo, OH 43606 USA ABSTRACT Triple-junction a-Si based solar cells, having a structure of SS cells and between the middle and bottom component cells on the efficiency of triple- junction solar

Deng, Xunming

500

Solar Space Density of the Red Clump Stars and the Scale-length of the Thin Disc  

E-Print Network [OSTI]

We estimated the scale-length of the thin disc with the J and W1 magnitudes of the most probable Red Clump (RC) stars in the Galactic plane, $-0\\overset{^\\circ}.5 \\leq b \\leq +0\\overset{^\\circ}.5$, in 19 equal sized fields with consecutive Galactic longitudes which cover the interval $90^\\circ \\leq l \\leq 270^\\circ$. Our results are constrained with respect to the solar space density ($D^*=5.95$), which indicates that the radial variation of the density is lower for higher Galactocentric distances. The scale-length of the thin disc is 2 kpc for the fields in the Galactic anticentre direction or close to this direction, while it decreases continuously in the second and third quadrants reaching to a lower limit of $h$ = 1.6 kpc at the Galactic longitudes $l$ = 90$^\\circ$ and $l$ = 270$^\\circ$. The distribution of the scale-length in 19 fields is consistent with the predictions from the Galaxia model and its variation with longitude is probably due to the inhomogeneity structure of the disc caused by the accrete...

Gokce, E Yaz; Duran, S; Bilir, S; Yalcinkaya, A; Ak, S; Ak, T; Lopez-Corredoira, M; Cabrera-Lavers, A

2015-01-01T23:59:59.000Z