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Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
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1

Enabling Thin Silicon Solar Cell Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

Enabling Thin Silicon Solar Cell Technology Enabling Thin Silicon Solar Cell Technology Print Friday, 21 June 2013 10:49 Generic silicon solar cells showing +45, -45, and...

2

Enabling Thin Silicon Solar Cell Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

Enabling Thin Silicon Solar Cell Enabling Thin Silicon Solar Cell Technology Enabling Thin Silicon Solar Cell Technology Print Friday, 21 June 2013 10:49 Generic silicon solar cells showing +45°, -45°, and dendritic crack patterns. The effort to shift U.S. energy reliance from fossil fuels to renewable sources has spurred companies to reduce the cost and increase the reliability of their solar photovoltaics (SPVs). The use of thinner silicon in SPV technologies is being widely adopted because it significantly reduces costs; however, silicon is brittle, and thinner silicon, coupled with other recent trends in SPV technologies (thinner glass, lighter or no metal frames, increased use of certain polymers for encapsulation of the silicon cells), is more susceptible to stress and cracking. When the thin

3

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network (OSTI)

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

4

Substrate for thin silicon solar cells  

DOE Patents (OSTI)

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

Ciszek, T.F.

1995-03-28T23:59:59.000Z

5

Substrate for thin silicon solar cells  

DOE Patents (OSTI)

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

Ciszek, Theodore F. (Evergreen, CO)

1995-01-01T23:59:59.000Z

6

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer  

SciTech Connect

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Carlson, David E. (Yardley, PA)

1980-01-01T23:59:59.000Z

7

Thin film polycrystalline silicon solar cells  

DOE Green Energy (OSTI)

During the present quarter efficiency of heterostructure solar cells has been increased from 13 to 13.7% for single crystal and from 10.3 to 11.2% for polysilicon. For polysilicon the improvements can be attributed to reductions in grid-area coverage and in reflection losses and for single crystal to a combination of reduction in grid-area coverage and increase in fill factor. The heterostructure cells in both cases were IT0/n-Si solar cells. Degradation in Sn0/sub 2//n-Si solar cells can be greatly reduced to negligible proportions by proper encapsulation. The cells used in stability tests have an average initial efficiency of 11% which reduces to a value of about 10.5% after 6 months of exposure to sunlight and ambient conditions. This small degradation occurs within the first month, and the efficiency remains constant subsequently. The reduction in efficiency is due to a decrease in the open-circuit voltage only, while the short-circuit current and fill factor remain constant. The effects of grain-size on the Hall measurements in polysilicon have been analyzed and interpreted, with some modifications, using a model proposed by Bube. This modified model predicts that the measured effective Hall voltage is composed of components originating from the bulk and space-charge region. For materials with large grains, the carrier concentration is independent of the inter-grain boundary barrier, whereas the mobility is dependent on it. However, for small rains, both the carrier density and mobility depend on the barrier. These predictions are consistant with experimental results of mm-size Wacker polysilicon and ..mu..m-size NTD polysilicon.

Ghosh, A. K.; Feng, T.; Eustace, D. J.; Maruska, H. P.

1980-01-01T23:59:59.000Z

8

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers  

DOE Green Energy (OSTI)

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Antoniadis, H.

2011-03-01T23:59:59.000Z

9

Amorphous silicon/polycrystalline thin film solar cells  

DOE Patents (OSTI)

An improved photovoltaic solar cell is described including a p-type amorphous silicon layer, intrinsic amorphous silicon, and an n-type polycrystalline semiconductor such as cadmium sulfide, cadmium zinc sulfide, zinc selenide, gallium phosphide, and gallium nitride. The polycrystalline semiconductor has an energy bandgap greater than that of the amorphous silicon. The solar cell can be provided as a single-junction device or a multijunction device.

Ullal, H.S.

1991-03-13T23:59:59.000Z

10

Silicon solar cell assembly  

DOE Patents (OSTI)

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

Burgess, Edward L. (Albuquerque, NM); Nasby, Robert D. (Albuquerque, NM); Schueler, Donald G. (Albuquerque, NM)

1979-01-01T23:59:59.000Z

11

Status of Amorphous and Crystalline Thin Film Silicon Solar Cell Activities  

DOE Green Energy (OSTI)

This paper reviews the recent activities and accomplishments of the national Amorphous Silicon Team and a (crystalline) thin-film-Si subteam that was implemented in 2002 to research solar cell devices based on thin crystalline Si based layers. This paper reports the evolution of team organization, the technical highlights from the recent team meetings, and an outlook on commercialization potential.

von Roedern, B.

2003-05-01T23:59:59.000Z

12

Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010  

Science Conference Proceedings (OSTI)

In this program we have been developing a technology for fabricating thin (cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

Kumar, A.; Ravi, K. V.

2011-06-01T23:59:59.000Z

13

Amorphous-silicon thin-film heterojunction solar cells  

DOE Green Energy (OSTI)

The investigation of amorphous silicon materials at MTSEC has had two major thrusts: (1) to improve the amorphous material, i.e., obtain a low state density in the gap, improve the carrier collection depth and diminish non-radiative recombinations; and (2) to attempt to understand and improve on the limitations of the junction devices while evaluating the amorphous silicon materials. In the first of these efforts, the investigation has continued to examine the modifications to the a-Si(H) network by alloying silicon with other group IVA elements, either in binary or ternary compositions, and/or by replacing the hydrogenation for defect compensation with a combination of hydrogenation and alkylation or hydrogenation and halogenation. The doped junction layers are being examined in an attempt to determine the limiting characteristics of the junctions in solar cell devices of these amorphous materials. Amorphous alloys of Si-Ge, Si-C, Si-Sn were prepared as well as ternary compositions of Si-Ge-C and Si-Sn-C. In addition, Na vapor was added to the gas feed to deposit a-Si(Na, H) films, and to prepare Si-Sn, fluoride was added along with the tin by vapor additions of SnF/sub 4/ to the gas feed. The optical properties of these materials were measured, and structural and compositional information was obtained from the IR vibrational spectra using the scanning electron microscope and from analyses using scanning Auger microscopy. Electrical measurements have included the dark conductivity and the photo conductivity under room fluorescent light and at AM1 conditions. With alloys that displayed promising photoconductive properties n-i-p devices were prepared to assess the solar cell properties. Details are presented. (WHK)

Cretella, M. C.; Gregory, J. A.; Sandstrom, D. B.; Paul, W.

1981-01-01T23:59:59.000Z

14

Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier  

DOE Patents (OSTI)

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

Carlson, David E. (Yardley, PA); Wronski, Christopher R. (Princeton, NJ)

1979-01-01T23:59:59.000Z

15

Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells  

E-Print Network (OSTI)

Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells. de Bariloche, Argentina 3 ECN Solar Energy, High Tech Campus, Building 5, 5656 AE Eindhoven energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar

Dunin-Borkowski, Rafal E.

16

Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010  

DOE Green Energy (OSTI)

In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

Kumar, A.; Ravi, K. V.

2011-06-01T23:59:59.000Z

17

Thin film polycrystalline silicon solar cells. Second technical progress report, July 16, 1980-October 15, 1980  

DOE Green Energy (OSTI)

The objectives of this contract are to fabricate large area thin film silicon solar cells with AM1 efficiency of 10% or greater with good reproducibility and good yield and to assess the feasibility of implementing this process for manufacturing solar cells at a cost of $300/kWe. Efforts have been directed to the purification of metallurgical silicon, the preparation and characterization of substrates and epitaxial silicon layers, and the fabrication and characterization of solar cells. The partial purification of metallurgical silicon by extraction with aqua regia has been further investigated in detail, and the resulting silicon was analyzed by the atomic absorption technique. The unidirectional solidification of aqua regia-extracted metallurgical silicon on graphite was used for the preparation of substrates, and the impurity distribution in the substrate was determined and compared with the impurity content in metallurgical silicon. The effects of heat treatment on the impurity distribution in the substrate and in the epitaxial layer have also been investigated. Large area (30 to 60 cm/sup 2/) solar cells have been prepared from aqua regia-extracted metallurgical silicon substrates by depositing a p-n junction structure using the thermal reduction of trichlorosilane containing appropriate dopants. The AM1 efficiencies are about 9% for cells of 30 to 35 cm/sup 2/ area. Larger area, 60 cm/sup 2/, thin film solar cells have been fabricated for the first time, and their AM1 efficiencies are slightly higher than 8%. The spectral response, minority carrier diffusion length, and I/sub sc/-V/sub oc/ relation in a number of solr cells have been measured.

None

1980-10-01T23:59:59.000Z

18

MIS solar cells on thin polycrystalline silicon. Progress report No. 3, September 1-November 30, 1980  

DOE Green Energy (OSTI)

The first task of this project involves electron-beam deposition of thin silicon films on low cost substrates. The goal is to obtain 20 ..mu..m thick films having 20 ..mu..m diameter crystallites which may be recrystallized to > 40 ..mu..m. Material characterization and device studies are to be included in efforts to reach a 6% conversion efficiency. The second task deals with MIS solar cell fabrication on various types of silicon including poly-Si, ribbon-Si, silicon on ceramic, and thin film silicon. Conduction mechanism studies, optimum engineering design, and modification of the fabrication process are to be used to achieve 13% efficiency on Xtal-Si and 11% efficiency on poly-Si. The third task involves more detailed test procedures and includes spectral response, interface and grain boundary effects, computer analysis, materials studies, and grain boundary passivation. Progress is detailed. (WHK)

Anderson, W.A.

1980-12-01T23:59:59.000Z

19

Light Trapping for Thin Silicon Solar Cells by Femtosecond Laser Texturing: Preprint  

DOE Green Energy (OSTI)

Femtosecond laser texturing is used to create nano- to micron-scale surface roughness that strongly enhances light-trapping in thin crystalline silicon solar cells. Light trapping is crucial for thin solar cells where a single light-pass through the absorber is insufficient to capture the weakly absorbed red and near-infrared photons, especially with an indirect-gap semiconductor absorber layer such as crystalline Si which is less than 20 um thick. We achieve enhancement of the optical absorption from light-trapping that approaches the Yablonovitch limit.

Lee, B. G.; Lin, Y. T.; Sher, M. J.; Mazur, E.; Branz, H. M.

2012-06-01T23:59:59.000Z

20

Low-cost, deterministic quasi-periodic photonic structures for light trapping in thin film silicon solar cells  

E-Print Network (OSTI)

Light trapping has been an important issue for thin film silicon solar cells because of the low absorption coefficient in the near infrared range. In this paper, we present a photonic structure which combines anodic aluminum ...

Sheng, Xing

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Role of Amorphous Silicon and Tunneling in Heterojunction with Intrinsic Thin Layer (HIT) Solar Cells  

Science Conference Proceedings (OSTI)

This work analyzes heterojunction with intrinsic thin layer (HIT) solar cells using numerical simulations. The differences between the device physics of cells with p- and n-type crystalline silicon (c-Si) wafers are substantial. HIT solar cells with n-type wafers essentially form a n/p/n structure, where tunneling across the junction heterointerfaces is a critical transport mechanism required to attain performance exceeding 20%. For HIT cells with p-type wafers, only tunneling at the back-contact barrier may be important. For p-wafer cells, the hydrogenated amorphous silicon (a-Si:H) between the indium tin oxide (ITO) and crystalline silicon may act as a passivating buffer layer but, otherwise, does not significantly contribute to device performance. For n-wafer cells, the carrier concentration and band alignment of this a-Si:H layer are critical to device performance.

Kanevce, A.; Metzger, W. K.

2009-05-01T23:59:59.000Z

22

Available Technologies: Thinner Film Silicon Solar Cells  

Berkeley Lab scientists have designed a new approach to create highly efficient thin film silicon solar cells. This technology promises to lower solar cell material ...

23

Amorphous Silicon(a-Si: H) Thin Film Based Omnidirectional Control Solar Powered Vehicle  

Science Conference Proceedings (OSTI)

Through the paper, our goal is to drive a car with the help of thin film based solar cell. Mechanical and Electrical parts are assembled thereby. The main objective of this project is to collect maximum solar energy from the solar spectrum and use that ... Keywords: Thin film Photovoltaic, Single p-i-n Junction, Steering Mechanism, H-Bridge, Gear motor

Abdullah Moinuddin; Md. Jahidul Hoque; Jony C. Sarker; Akhter Zia

2012-03-01T23:59:59.000Z

24

High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing  

E-Print Network (OSTI)

One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

25

Development of Commercial Technology for Thin Film Silicon Solar Cells on Glass: Cooperative Research and Development Final Report, CRADA Number CRD-07-209  

DOE Green Energy (OSTI)

NREL has conducted basic research relating to high efficiency, low cost, thin film silicon solar cell design and the method of making solar cells. Two patents have been issued to NREL in the above field. In addition, specific process and metrology tools have been developed by NREL. Applied Optical Sciences Corp. (AOS) has expertise in the manufacture of solar cells and has developed its own unique concentrator technology. AOS wants to complement its solar cell expertise and its concentrator technology by manufacturing flat panel thin film silicon solar cell panels. AOS wants to take NREL's research to the next level, using it to develop commercially viable flat pane, thin film silicon solar cell panels. Such a development in equipment, process, and metrology will likely produce the lowest cost solar cell technology for both commercial and residential use. NREL's fundamental research capability and AOS's technology and industrial background are complementary to achieve this product development.

Sopori, B.

2013-03-01T23:59:59.000Z

26

Thin-film polycrystalline silicon solar cells. Quarterly report no. 3, October 16, 1980-January 15, 1981  

DOE Green Energy (OSTI)

The objectives of the project are: 1) to develop cell fabrication procedures to further define the maximum capabilities of the conducting oxide/silicon heterojunction solar cells; 2) to optimize the spray fabrication technique for making reproducible high efficiency cells; 3) to assess the stability and the projected lifetime of the cell structure; 4) to identify through appropriate measurements the effects of grain boundaries and intragrain defects on the electronic transport mechanisms in thin-film polycrystalline silicon; and 5) to determine the feasibility of a large-scale fabrication process. Progress is reported.

Ghosh, A. K.; Feng, T.; Eustace, D. J.; Maruska, H. P.

1981-01-01T23:59:59.000Z

27

Solar Cell Silicon  

Science Conference Proceedings (OSTI)

Jul 31, 2011 ... About this Symposium. Meeting, 2012 TMS Annual Meeting & Exhibition. Symposium, Solar Cell Silicon. Sponsorship, The Minerals, Metals...

28

Thin film polycrystalline silicon solar cells. Quarterly report No. 1, October 1-December 31, 1979  

DOE Green Energy (OSTI)

The MoSi/sub 2/ separation layer growth rate has been studied as a function of time and temperature. The presence of small amounts of O/sub 2/ in the silicon deposition ambient were found to inhibit the growth rate of the MoSi/sub 2/ layer and also to affect the reliability of shear separation. Void formation in silicon at the Si-MoSi/sub 2/ interface, due predominantly to diffusion of silicon through the MoSi/sub 2/ layer was observed. This is believed to be responsible for shear separation occurring in the silicon film. Gas chromatograhic procedures were developed for characterizing the silicon deposition process. Coherent twin bundles in the grain-enhanced silicon films were not found to adversely influence solar cell efficiency. Several 1 cm x 2 cm solar cells were fabricated. Performance characteristics of these cells are discussed; the best device had a conversion efficiency of 10.7% (under simulated AM1 illumination) with V/sub OC/ = 0.545 V, J/sub SC/ = 28.65 mA/cm/sup 2/ and FF = 68.3%.

Sarma, K.R.; Rice, M.J.; Legge, R.

1979-01-01T23:59:59.000Z

29

Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013  

DOE Green Energy (OSTI)

Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

Ravi, T. S.

2013-05-01T23:59:59.000Z

30

Electrochemical thinning of silicon  

DOE Patents (OSTI)

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

Medernach, J.W.

1994-01-11T23:59:59.000Z

31

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Annual subcontract report, May 1985 - Jul 1986  

DOE Green Energy (OSTI)

A study was undertaken of the optoelectronic properties of amorphous silicon-hydrogen thin films deposited from disilane at high deposition rates. The information derived from this study was used to fabricate amorphous silicon solar cells with efficiencies exceeding 7%. The intrinsic layer of these solar cells was deposited at 15 angstroms/second. Material properties investigated included dark conductivity, photoconductivity, minority carrier diffusion length, and density of states. The solar cells properties characterized were absolute quantum yield and simulated global AM 1.5 efficiencies. Investigations were undertaken utilizing optical and infrared spectroscopy to optimize the microstructures of the intrinsic amorphous silicon. That work was sponsored by the New York State Energy Research and Development Authority. The information was used to optimize the intrinsic layer of amorphous silicon solar cells, resulting in AM 1.5 efficiencies exceeding 7%.

Wiesmann, H.; Dolan, J.; Fricano, G.; Danginis, V.

1987-02-01T23:59:59.000Z

32

Solar Cell Silicon  

Science Conference Proceedings (OSTI)

... continued and costs have been cut dramatically along the production value chain. The most important feedstock for crystalline solar cells is high purity silicon .

33

Development of Thin Film Silicon Solar Cell Using Inkjet Printed Silicon and Other Inkjet Processes: Cooperative Research and Development Final Report, CRADA Number CRD-07-260  

Science Conference Proceedings (OSTI)

The cost of silicon photovoltaics (Si-PV) can be greatly lowered by developing thin-film crystalline Si solar cells on glass or an equally lower cost substrate. Typically, Si film is deposited by thermal evaporation, plasma enhanced chemical vapor deposition, and sputtering. NREL and Silexos have worked under a CRADA to develop technology to make very low cost solar cells using liquid organic precursors. Typically, cyclopentasilane (CPS) is deposited on a glass substrate and then converted into an a-Si film by UV polymerization followed by low-temperature optical process that crystallizes the amorphous layer. This technique promises to be a very low cost approach for making a Si film.

Sopori, B.

2012-04-01T23:59:59.000Z

34

Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006  

DOE Green Energy (OSTI)

The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

Wohlgemuth, J.; Narayanan, M.

2006-07-01T23:59:59.000Z

35

The Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint  

NLE Websites -- All DOE Office Websites (Extended Search)

Proposition for High Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications Preprint Alan Goodrich, Michael Woodhouse, and Peter Hacke Presented at the 2012 IEEE Photovoltaic Specialists Conference Austin, Texas June 3-8, 2012 Conference Paper NREL/CP-6A20-55477 June 2012 NOTICE The submitted manuscript has been offered by an employee of the Alliance for Sustainable Energy, LLC (Alliance), a contractor of the US Government under Contract No. DE-AC36-08GO28308. Accordingly, the US Government and Alliance retain a nonexclusive royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for US Government purposes. This report was prepared as an account of work sponsored by an agency of the United States government.

36

Thin film polycrystalline silicon solar cells. Quarterly report No. 1, January 1, 1979-March 31, 1979  

DOE Green Energy (OSTI)

A theory capable of predicting the performance of polycrystalline silicon solar cells is formulated. It relates grain size to mobility, lifetime, diffusion length, reverse saturation current, open circuit photovoltage and fill factor. Only the diffusion lengths measured by the surface photovoltage technique for grains less than or equal to 5 ..mu..m do not agree with our theory. The reason for this discrepancy is presently being investigated. We conclude that grains greater than or equal to 100 ..mu..m are necessary to achieve efficiencies greater than or equal to 10 percent at AM1 irradiance. The calculations were performed for the case of no grain boundary passivation. At present we are investigating the improvements to be expected from grain boundary passivation. We have determined that the parameters that best fit the available data are as follows: (1) Number of surface states at grain boundaries acting as recombination centers - 1.6 x 10/sup 13//cm/sup 2/. (2) Capture cross section - 2 x 10/sup -16/ cm/sup 2/. (3) Surface recombination velocity at grain boundary - 3.2 x 10/sup 4/ cm/sec. The following types of solar cells are considered in the model: SnO/sub 2//Si Heterostructure, MIS, and p/n junction. In all types of solar cells considered, grain boundary recombination plays a dominant role, especially for small grains. Though the calculations were originally expected to yield only order of magnitude results, they have proven to be accurate for most parameters within 10 percent.

Ghosh, A.K.; Feng, T.; Maruska, H.P.; Fishman, C.

1979-01-01T23:59:59.000Z

37

Performance of Ultrathin Silicon Solar Microcells with Nanostructures of Relief  

E-Print Network (OSTI)

of relief as light trapping structures (LTS) on thin, monocrys- talline silicon solar cells derived fromPerformance of Ultrathin Silicon Solar Microcells with Nanostructures of Relief Formed by Soft, Urbana, Illinois 61801 ABSTRACT Recently developed classes of monocrystalline silicon solar microcells

Rogers, John A.

38

Thinner Film Silicon Solar Cells - Energy Innovation Portal  

Technology Marketing Summary Berkeley Lab scientists have designed a new approach to create thin film silicon solar cells with a potential increase in ...

39

Solar Control Thin Films Laboratory  

NLE Websites -- All DOE Office Websites (Extended Search)

Sputtering equipment Solar Control Thin Films Laboratory The Solar Control Thin Films lab develops novel thin film coatings, deposition technologies, and device systems for...

40

Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint  

DOE Green Energy (OSTI)

Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so -- polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.

Goodrich, A.; Woodhouse, M.; Hacke, P.

2012-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Nanostructured plasmonics silicon solar cells  

Science Conference Proceedings (OSTI)

We report a plasmonics silicon solar cell design, with the possibility of lower cost and higher efficiency. The proposed solar cell consists of a radial p-n junction silicon nanopillar arrays in combination with metallic nanoparticles resolved at the ... Keywords: Antireflection coating, Optical absorption, Power conversion efficiency, Solar cells

Pushpa Raj Pudasaini, Arturo A. Ayon

2013-10-01T23:59:59.000Z

42

High efficiency low cost thin film silicon solar cell design and method for making  

DOE Patents (OSTI)

A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

Sopori, Bhushan L. (Denver, CO)

1999-01-01T23:59:59.000Z

43

High efficiency, low cost, thin film silicon solar cell design and method for making  

DOE Patents (OSTI)

A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

Sopori, Bhushan L. (Denver, CO)

2001-01-01T23:59:59.000Z

44

High efficiency low cost thin film silicon solar cell design and method for making  

DOE Patents (OSTI)

A semiconductor device is described having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer. 9 figs.

Sopori, B.L.

1999-04-27T23:59:59.000Z

45

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells  

DOE Green Energy (OSTI)

This document describes the progress made in obtaining stable, a-Si-based submodules that have a large area and high efficiency. Conversion efficiencies of up to 11.95% were obtained in small-area, single-junction a-Si solar cells using textured TiO{sub 2}, superlattice p-layers, graded carbon concentrations near the p/i interface, and highly reflective ITO/silver back contacts. Single- junction a-SiC and a-SiGe p-i-n cells were also fabricated that had conversion efficiencies of 9%--11%, and some recently fabricated stacked-junction cells had conversion efficiencies of about 10%. In materials research boron-doped microcrystalline SiC films were recently developed containing up to 6 at. % carbon with conductivities of 3 {times} 10{sup {minus}3}/{Omega}-cm at room temperature and activation energies of 0.11 eV. Microcrystalline film growth was shown to be strongly influenced by the nature of the substrate, with nucleation occurring more readily on a-Si substrates than on TiO{sub 2}. Stability studies show that light-induced degradation is usually enhanced by the presence of carbon grading near the p/i interface. In general, adding either germanium (from GeH{sub 4}) or carbon (from CH{sub 4}) to the i-layer of a p-i-n cell leads to enhanced light-induced degradation. 13 refs., 80 figs., 17 tabs.

Catalano, A.W.; Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; D'Aiello, R.V.; Dickson, C.R.; Fortmann, C.M.; Goldstein, B.; McVeigh, J.; Morris, J.; Newton, J.L.; Wiedeman, S. (Solarex Corp., Newtown, PA (USA). Thin Film Div.)

1989-10-01T23:59:59.000Z

46

Silicon Valley Solar Inc SV Solar | Open Energy Information  

Open Energy Info (EERE)

Silicon Valley Solar Inc SV Solar Jump to: navigation, search Name Silicon Valley Solar Inc (SV Solar) Place Santa Clara, California Zip 95051 Sector Solar Product A US-based...

47

A survey of thin-film solar photovoltaic industry & technologies  

E-Print Network (OSTI)

A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

Grama, Sorin

2007-01-01T23:59:59.000Z

48

Solar photovoltaic technology: The thin film option  

DOE Green Energy (OSTI)

Photovoltaics (PV) the direct conversion of sunlight to electricity was first discovered by scientists at the Bell Labs in 1954. In the late 1960's and 1970's most of the solar cell technology has been used for space applications to power satellites. The main work horse for the PV technology has been crystalline silicon (Si) solar cells. Over the past 15 years this has led to cost reduction from $35/kWh to about $0.30/kWh at the present time. Demonstrated reliability of 20 years or more has resulted in acceptance by several utilities. However, cost reductions in crystalline Si solar cells have been limited by the cost of wafering of ingots and the attendant loss of material. A number of Si sheet solar cells are also being investigated. In the past decade the emphasis of the research and development effort has been focused on thin film solar cells, which have the potential for generating power at much lower cost of $1-2/Wp. Thin film solar cells that are presently being investigated and are generating global attention are: amorphous silicon (a-Si:H), cadmium telluride (CdTe), and copper indium diselenide (CuInSe/sub 2,/ or CIS). In the past few years, considerable progress has been; made by all three of these thin film solar cells. This paper reviews the current status and future potential of these exiting thin film solar cell technologies.

Ullal, H.S.; Zweibel, K.; Sabisky, E.S.; Surek, T.

1988-01-01T23:59:59.000Z

49

Silicon-film{trademark} on ceramic solar cells. Final report  

DOE Green Energy (OSTI)

The Silicon-Film{trademark} design achieves high performance through the use of a thin silicon layer. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The enhancement in performance requires the incorporation of back-surface passivation and light trapping. The high-performance Silicon-Film{trademark} design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. The properties of the metallurgical barrier must be engineered to implement specific device requirements, such as high back-surface reflectivity. Recent advances in process development are described here.

Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Lampo, S.M.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M. [AstroPower, Inc., Newark, DE (United States)

1993-02-01T23:59:59.000Z

50

Compensated amorphous silicon solar cell  

DOE Patents (OSTI)

An amorphous silicon solar cell incorporates a region of intrinsic hydrogenated amorphous silicon fabricated by a glow discharge wherein said intrinsic region is compensated by P-type dopants in an amount sufficient to reduce the space charge density of said region under illumination to about zero.

Carlson, David E. (Yardley, PA)

1980-01-01T23:59:59.000Z

51

Design, construction and testing of a high-vacuum anneal chamber for in-situ crystallisation of silicon thin-film solar cells.  

E-Print Network (OSTI)

??Thin-film solar cells on glass substrates are likely to have a bright future due to the potentially low costs and the short energy payback times. (more)

Weber, Jrgen Wolfgang

2006-01-01T23:59:59.000Z

52

Recent technological advances in thin film solar cells  

DOE Green Energy (OSTI)

High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

Ullal, H.S.; Zwelbel, K.; Surek, T.

1990-03-01T23:59:59.000Z

53

The Quest for Inexpensive Silicon Solar Cells  

To learn more about NREL's silicon solar cell research, visit the Silicon Materials and Devices Web site. Did you find what you needed? Yes No. Thank ...

54

Compensated amorphous silicon solar cell  

SciTech Connect

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

Devaud, Genevieve (629 S. Humphrey Ave., Oak Park, IL 60304)

1983-01-01T23:59:59.000Z

55

Available Technologies:Improved Amorphous Silicon Solar Cells  

Solar cells; Large solar panels; ADVANTAGES. Increased performance ; Less expensive than crystalline silicon solar cells; Enables thinner, lighter solar panels;

56

Engineering Metal Impurities in Multicrystalline Silicon Solar...  

NLE Websites -- All DOE Office Websites (Extended Search)

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Transition metals are one of the main culprits in degrading the efficiency of multicrystalline solar...

57

Cermet layer for amorphous silicon solar cells  

DOE Patents (OSTI)

A transparent high work function metal cermet forms a Schottky barrier in a Schottky barrier amorphous silicon solar cell and adheres well to the P+ layer in a PIN amorphous silicon solar cell.

Hanak, Joseph J. (Lawrenceville, NJ)

1979-01-01T23:59:59.000Z

58

Amorphous silicon solar cells  

SciTech Connect

The fabrication, performance, and applications of a-Si solar cells are discussed, summarizing the results of recent experimental investigations and trial installations. Topics examined include the fundamental principles and design strategies of solar power installations; the characteristics of monocrystalline-Si solar cells; techniques for reducing the cost of solar cells; independent, linked, and hybrid solar power systems; proposed satellite solar power systems; and the use of solar cells in consumer appliances. Consideration is given to the history of a-Si, a-Si fabrication techniques, quality criteria for a-Si films, solar cells based on a-Si, and techniques for increasing the efficiency and lowering the cost of a-Si solar cells. Graphs, diagrams, drawings, and black-and-white and color photographs are provided. 136 references.

Takahashi, K.; Konagai, M.

1986-01-01T23:59:59.000Z

59

Solar Cell Silicon - Programmaster.org  

Science Conference Proceedings (OSTI)

Jul 31, 2012 ... About this Symposium. Meeting, 2013 TMS Annual Meeting & Exhibition. Symposium, Solar Cell Silicon. Sponsorship, TMS Extraction and...

60

Solar Thin Power | Open Energy Information  

Open Energy Info (EERE)

Power Jump to: navigation, search Name Solar Thin Power Place New York Sector Solar Product Solar Thin Power was formed to seek out solar projects in North America, Asia and Europe...

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Thin Film Solar Technologies | Open Energy Information  

Open Energy Info (EERE)

Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon Thin Film Solar Technologies Jump to: navigation, search Name Thin Film Solar Technologies...

62

Method for processing silicon solar cells  

DOE Patents (OSTI)

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

1997-05-06T23:59:59.000Z

63

Method for processing silicon solar cells  

DOE Patents (OSTI)

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

Tsuo, Y. Simon (Golden, CO); Landry, Marc D. (Lafayette, CO); Pitts, John R. (Lakewood, CO)

1997-01-01T23:59:59.000Z

64

MIS and SIS solar cells on polycrystalline silicon  

DOE Green Energy (OSTI)

MIS and SIS structured solar cells are receiving much attention in the photovoltaic community. Seemingly, these cells could be a viable alternative to thermally diffused p-n junctions for use on thin-film polycrystalline silicon substrates. This review describes MIS/SIS structured solar cells and the possible advantages of these structures for use with thin-film polycrystalline silicon. The results of efficiency calculations are presented. Also addressed are lifetime stability and fabrication techniques amenable to large scale production. Finally, the relative advantages and disadvantages of these cells and the results obtained are presented.

Cheek, G.; Mertens, R.

1980-02-01T23:59:59.000Z

65

NREL: Energy Analysis - Crystalline Silicon and Thin Film Photovoltaic  

NLE Websites -- All DOE Office Websites (Extended Search)

Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Assessment Harmonization Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics (Fact Sheet) Cover of the Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics factsheet Download the Fact Sheet Over the last 30 years, hundreds of life cycle assessments (LCAs) have been conducted and published for a variety of residential and utility-scale solar photovoltaic (PV) systems with wide-ranging results. The inconsistencies in these results can be attributed to the technologies evaluated-such as differing system designs, real-world versus conceptual systems, or technology improvements over time-and life cycle assessment methods and assumptions. To better understand greenhouse gas (GHG) emissions from commercial

66

Laser wafering for silicon solar.  

SciTech Connect

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01T23:59:59.000Z

67

Epitaxial Thin Film Silicon Solar Cells Fabricated by Hot Wire Chemical Vapor Deposition Below 750 ..deg..C: Preprint  

Science Conference Proceedings (OSTI)

We report on fabricating film c-Si solar cells on Si wafer templates by hot-wire chemical vapor deposition. These devices, grown at glass-compatible temperatures 500 mV and efficiencies > 5%.

Alberi, K.; Martin, I. T.; Shub, M.; Teplin, C. W.; Iwaniczko, E.; Xu, Y.; duda, A.; Stradin, P.; Johnston, S. W.; Romero, M. J.; Branz, H. M.; Young, D. L.

2009-06-01T23:59:59.000Z

68

Overview and Challenges of Thin Film Solar Electric Technologies  

DOE Green Energy (OSTI)

In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

Ullal, H. S.

2008-12-01T23:59:59.000Z

69

Epitaxial Thin Film Silicon Solar Cells Fabricated by Hot Wire Chemical Vapor Deposition Below 750 ..deg..C: Preprint  

SciTech Connect

We report on fabricating film c-Si solar cells on Si wafer templates by hot-wire chemical vapor deposition. These devices, grown at glass-compatible temperatures < 750..deg..C, demonstrate open-circuit voltages > 500 mV and efficiencies > 5%.

Alberi, K.; Martin, I. T.; Shub, M.; Teplin, C. W.; Iwaniczko, E.; Xu, Y.; duda, A.; Stradin, P.; Johnston, S. W.; Romero, M. J.; Branz, H. M.; Young, D. L.

2009-06-01T23:59:59.000Z

70

Laser wafering for silicon solar.  

Science Conference Proceedings (OSTI)

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01T23:59:59.000Z

71

Amorphous silicon solar cell allowing infrared transmission  

DOE Patents (OSTI)

An amorphous silicon solar cell with a layer of high index of refraction material or a series of layers having high and low indices of refraction material deposited upon a transparent substrate to reflect light of energies greater than the bandgap energy of the amorphous silicon back into the solar cell and transmit solar radiation having an energy less than the bandgap energy of the amorphous silicon.

Carlson, David E. (Yardley, PA)

1979-01-01T23:59:59.000Z

72

Photovoltaic mechanisms in polycrystalline thin film silicon solar cells. Final report, 30 June 1979-29 June 1980  

DOE Green Energy (OSTI)

The objectives of this program were: (1) to develop appropriate measurement techniques to facilitate a quantitative study of the electrical activity of structural defects and at a grain boundary (G.B.) in terms of generation-recombination, barrier height, and G.B. conductivity; (2) to characterize G.B.s in terms of physical properties such as angle of misfit and local stress, and to correlate them with the electrical activity; (3) to determine the influence of solar cell processing on the electrical behavior of structural defects and G.B.s; and (4) to evaluate polycrystalline solar cell performance based on the above study, and to compare it with the experimentally measured performance. Progress is reported in detail. (WHK)

Sopori, B.L.

1980-11-01T23:59:59.000Z

73

Potential of Silicon Solar Cells from Metallurgical Process Route  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, 2013 TMS Annual Meeting & Exhibition. Symposium , Solar Cell Silicon. Presentation Title, Potential of Silicon Solar Cells from...

74

Techniques of Nanoscale Silicon Texturing of Solar Cells ...  

Patent 6,329,296: Metal catalyst technique for texturing silicon solar cells Textured silicon solar cells and techniques for their manufacture ...

75

Stress and Fracture of Silicon Solar Cells as Revealed by ...  

Science Conference Proceedings (OSTI)

Presentation Title, Stress and Fracture of Silicon Solar Cells as Revealed by ... thinner and thinner silicon in the solar photovoltaic (PV) technologies due to the...

76

Structure of Silicon-Based Thin Film Solar Cell Materials: Annual Technical Progress Report, 1 April 2002--31 August 2003  

DOE Green Energy (OSTI)

The purpose of this research is to achieve a better understanding to improve materials used as the intrinsic layers of amorphous and microcrystalline silicon-based solar cells. Fundamental structural properties will be investigated on atomic and nano-scales. A powerful combination of techniques will be used: analytical high-resolution transmission electron microscopy (HRTEM), including special associated spectroscopic methods, small-angle scattering techniques (SAXS, ASAXS, SANS), and conventional wide-angle X-ray diffraction (XRD).

Williamson, D. L.

2004-01-01T23:59:59.000Z

77

Tandem junction amorphous silicon solar cells  

DOE Patents (OSTI)

An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

Hanak, Joseph J. (Lawrenceville, NJ)

1981-01-01T23:59:59.000Z

78

Silicon concentrator solar cell research  

DOE Green Energy (OSTI)

This report describes work conducted between December 1990 and May 1992 continuing research on silicon concentrator solar cells. The objectives of the work were to improve the performance of high-efficiency cells upon p-type substrates, to investigate the ultraviolet stability of such cells, to develop concentrator cells based on n-type substrates, and to transfer technology to appropriate commercial environments. Key results include the identification of contact resistance between boron-defused areas and rear aluminum as the source of anomalously large series resistance in both p- and n-type cells. A major achievement of the present project was the successful transfer of cell technology to both Applied Solar Energy Corporation and Solarex Corporation.

Green, M.A.; Zhao, J.; Wang, A.; Dai, X.; Milne, A.; Cai, S.; Aberle, A.; Wenham, S.R. [Univ. of New South Wales, Kensington, NSW (AU). Centre for Photovoltaic Devices and Systems

1993-06-01T23:59:59.000Z

79

Magnetically Guided Shaping for Solar Cell Silicon Applications  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, 2014 TMS Annual Meeting & Exhibition. Symposium , Solar Cell Silicon. Presentation Title, Magnetically Guided Shaping for Solar...

80

Thin film solar energy collector  

DOE Patents (OSTI)

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

1983-11-22T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface  

DOE Green Energy (OSTI)

The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5+2)nm after SPC could be estimated.

Bar, M.; Wimmer, M.; Wilks, R. G.; Roczen, M.; Gerlach, D.; Ruske, F.; Lips, K.; Rech, B.; Weinhardt, L.; Blum, M.; Pookpanratana, S.; Krause, S.; Zhang, Y.; Heske, C.; Yang, W.; Denlinger, J. D.

2010-04-30T23:59:59.000Z

82

Epitaxial silicon growth for solar cells. Final report  

DOE Green Energy (OSTI)

The objectives of this contract were: (1) to determine the feasibility of silicon epitaxial growth on low-cost silicon substrates for the development of silicon sheet capable of producing low-cost, high efficiency solar cells; (2) to achieve a goal of 12% (AM-0) efficient solar cells fabricated on thin epitaxial layers (<25 ..mu..m) grown on low-cost substrates; and (3) to evaluate the add-on cost for the epitaxial process and to develop low-cost epitaxial growth procedures for application in conjunction with low-cost silicon substrates. The basic epitaxial procedures and solar-cell fabrication and evaluation techniques are described, followed by a discussion of the development of baseline epitaxial solar-cell structures, grown on high-quality conventional silicon substrates. This work resulted in the definition of three basic structures which reproducibly yielded efficiencies in the range of 12 to 13.7%. These epitaxial growth procedures and baseline structures were then used to grow diagnostic layers and solar cells on four potentially low-cost silicon substrates. A description of the crystallographic properties of such layers and the performance of epitaxially grown solar cells fabricated on these materials is given. The major results were the achievement of cell efficiencies of 10.6 to 11.2% on multigrained substrates and approx. 13% on a low-cost single-crystal substrate. An advanced epitaxial reactor, the Rotary Disc, is described. The results of growing solar-cell structures of the baseline type and on low-cost substrates are given. The add-on cost for the epitaxial process is assessed. These cost estimates show a value of approx. 0.46/W using existing or near-term technologies and project an add-on cost of $0.10/W for future reactors.

D'Aiello, R.V.; Robinson, P.H.; Richman, D.

1979-04-01T23:59:59.000Z

83

Integrated photonic structures for light trapping in thin-film Si solar cells  

E-Print Network (OSTI)

We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

Sheng, Xing

84

Cheaper Silicon Found Effective for Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Cheaper Silicon Found Effective for Solar Cells Cheaper Silicon Found Effective for Solar Cells A research team from the University of California at Berkeley, Lawrence Berkeley National Laboratory, Argonne National Laboratory, and Pacific Northwest National Laboratory, using U.S. Department of Energy (DOE) synchrotron light sources, has successfully shown that inexpensive silicon has the potential to be used for photovoltaic (PV) devices, commonly known as solar cells. In a new approach-whose findings were published online in Nature Materials (August 14, 2005)-the researchers used nanodefect engineering to control transition metal contamination in order to produce impurity-rich, performance-enhanced multicrystalline silicon (mc-Si) material. "Solar energy is often touted as the most promising and secure energy

85

Texturization of multicrystalline silicon solar cells  

E-Print Network (OSTI)

A significant efficiency gain for crystalline silicon solar cells can be achieved by surface texturization. This research was directed at developing a low-cost, high-throughput and reliable texturing method that can create ...

Li, Dai-Yin

2010-01-01T23:59:59.000Z

86

APIVT-Grown Silicon Thin Layers and PV Devices: Preprint  

DOE Green Energy (OSTI)

Large-grained (5-20 ..mu..m) polycrystalline silicon layers have been grown at intermediate temperatures of 750-950C directly on foreign substrates without a seeding layer by iodine vapor transport at atmospheric pressure with rates as high as 3 mm/min. A model is constructed to explain the atypical temperature dependence of growth rate. We have also used this technique to grow high-quality epitaxial layers on heavily doped CZ-Si and on upgraded MG-Si substrates. Possible solar cell structures of thin-layer polycrystalline silicon on foreign substrates with light trapping have been examined, compared, and optimized by two-dimensional device simulations. The effects of grain boundary re-combination on device performance are presented for two grain sizes of 2 and 20 mm. We found that 104 cm/s recombination velocity is adequate for 20-m m grain-sized thin silicon, whereas a very low recombination velocity of 103 cm/s must be accomplished in order to achieve reasonable performance for a 2- mm grain-sized polycrystalline silicon device.

Wang, T. H.; Ciszek, T. F.; Page, M. R.; Bauer, R. E.; Wang, Q.; Landry, M. D.

2002-05-01T23:59:59.000Z

87

Manufacture of silicon carbide using solar energy  

SciTech Connect

A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

Glatzmaier, Gregory C. (Boulder, CO)

1992-01-01T23:59:59.000Z

88

Manufacture of silicon carbide using solar energy  

DOE Patents (OSTI)

This invention is comprised of a method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

Glatzmaier, G.C.

1991-04-08T23:59:59.000Z

89

Studies of pure and nitrogen-incorporated hydrogenated amorphous carbon thin films and their possible application for amorphous silicon solar cells  

Science Conference Proceedings (OSTI)

Hydrogenated amorphous carbon (a-C:H) and nitrogen-incorporated a-C:H (a-C:N:H) thin films were deposited using radio frequency-plasma-enhanced chemical vapor deposition technique and studied for their electrical, optical, and nano-mechanical properties. Introduction of nitrogen and increase of self bias enhanced the conductivity of a-C:H and a-C:N:H films, whereas current-voltage measurement reveals heterojunction formation due to their rectifying behavior. The bandgap of these films was changed over wide range from 1.9 eV to 3.45 eV by varying self bias and the nitrogen incorporation. Further, activation energy was correlated with the electronic structure of a-C:H and a-C:N:H films, and conductivity was discussed as a function of bandgap. Moreover, a-C:N:H films exhibited high hardness and elastic modulus, with maximum values as 42 GPa and 430 GPa, respectively, at -100 V. Observed fascinating electrical, optical, and nano-mechanical properties made it a material of great utility in the development of optoelectronic devices, such as solar cells. In addition, we also performed simulation study for an a-Si:H solar cell, considering a-C:H and C:N:H as window layers, and compared their performance with the a-Si:H solar cell having a-SiC:H as window layer. We also proposed several structures for the development of a near full-spectrum solar cell. Moreover, due to high hardness, a-C:N:H films can be used as a protective and encapsulate layer on solar cells, especially in n-i-p configuration on metal substrate. Nevertheless, a-C:H and a-C:N:H as a window layer can avoid the use of additional hard and protective coating and, hence, minimize the cost of the product.

Dwivedi, Neeraj [Physics of Energy Harvesting Division, National Physical Laboratory (CSIR), K.S. Krishnan Road, New Delhi 110012 (India); Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India); Kumar, Sushil [Physics of Energy Harvesting Division, National Physical Laboratory (CSIR), K.S. Krishnan Road, New Delhi 110012 (India); Malik, Hitendra K. [Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)

2012-01-01T23:59:59.000Z

90

Compensated amorphous-silicon solar cell  

DOE Patents (OSTI)

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

Devaud, G.

1982-06-21T23:59:59.000Z

91

Three dimensional amorphous silicon/microcrystalline silicon solar cells  

DOE Patents (OSTI)

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

Kaschmitter, J.L.

1996-07-23T23:59:59.000Z

92

Three dimensional amorphous silicon/microcrystalline silicon solar cells  

DOE Patents (OSTI)

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

Kaschmitter, James L. (Pleasanton, CA)

1996-01-01T23:59:59.000Z

93

GCL Solar Energy Technology Holdings formerly GCL Silicon aka...  

Open Energy Info (EERE)

GCL Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu Zhongneng Polysilicon Jump to: navigation, search Name GCL Solar Energy Technology Holdings (formerly GCL...

94

Harmful Shunting Mechanisms Found in Silicon Solar Cells (Fact Sheet)  

DOE Green Energy (OSTI)

Scientists developed near-field optical microscopy for imaging electrical breakdown in solar cells and identified critical electrical breakdown mechanisms operating in industrial silicon and epitaxial silicon solar cells.

Not Available

2011-05-01T23:59:59.000Z

95

Inverted amorphous silicon solar cell utilizing cermet layers  

DOE Patents (OSTI)

An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

Hanak, Joseph J. (Lawrenceville, NJ)

1979-01-01T23:59:59.000Z

96

gas phase interactions as sources of contamination in solar silicon  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, 2014 TMS Annual Meeting & Exhibition. Symposium , Solar Cell Silicon. Presentation Title, GAS PHASE INTERACTIONS AS...

97

Solar Cell Silicon: Production and Recyling - Programmaster.org  

Science Conference Proceedings (OSTI)

About this Symposium. Meeting, 2010 TMS Annual Meeting & Exhibition. Symposium, Solar Cell Silicon: Production and Recyling. Sponsorship, The Minerals...

98

Solid Oxide Membrane Process for Solar Grade Silicon Production ...  

Science Conference Proceedings (OSTI)

Presentation Title, Solid Oxide Membrane Process for Solar Grade Silicon ... Polysilicon in Photovoltaics: Market Conditions & Competing PV Technologies.

99

Removal of Inclusions from Solar Grade Silicon Using ...  

Science Conference Proceedings (OSTI)

Polysilicon in Photovoltaics: Market Conditions & Competing PV Technologies ... Removal of Inclusions from Solar Grade Silicon Using Electromagnetic Field.

100

Thin Silicon MEMS Contact-Stress Sensor  

SciTech Connect

This thin, MEMS contact-stress (CS) sensor continuously and accurately measures time-varying, solid interface loads in embedded systems over tens of thousands of load cycles. Unlike all other interface load sensors, the CS sensor is extremely thin (< 150 {micro}m), provides accurate, high-speed measurements, and exhibits good stability over time with no loss of calibration with load cycling. The silicon CS sensor, 5 mm{sup 2} and 65 {micro}m thick, has piezoresistive traces doped within a load-sensitive diaphragm. The novel package utilizes several layers of flexible polyimide to mechanically and electrically isolate the sensor from the environment, transmit normal applied loads to the diaphragm, and maintain uniform thickness. The CS sensors have a highly linear output in the load range tested (0-2.4 MPa) with an average accuracy of {+-} 1.5%.

Kotovsky, J; Tooker, A; Horsley, D

2010-03-22T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Method of casting silicon into thin sheets  

DOE Patents (OSTI)

Silicon (Si) is cast into thin shapes within a flat-bottomed graphite crucible by providing a melt of molten Si along with a relatively small amount of a molten salt, preferably NaF. The Si in the resulting melt forms a spherical pool which sinks into and is wetted by the molten salt. Under these conditions the Si will not react with any graphite to form SiC. The melt in the crucible is pressed to the desired thinness with a graphite tool at which point the tool is held until the mass in the crucible has been cooled to temperatures below the Si melting point, at which point the Si shape can be removed.

Sanjurjo, Angel (San Jose, CA); Rowcliffe, David J. (Los Altos, CA); Bartlett, Robert W. (Tucson, AZ)

1982-10-26T23:59:59.000Z

102

Transparent Conductors and Barrier Layers for Thin Film Solar Cells:  

DOE Green Energy (OSTI)

This report describes the research undertaken to increase the efficiency of thin-film solar cells based on amorphous silicon in the so-called''superstrate structure'' (glass front surface/transparent electrically conductive oxide (TCO)/pin amorphous silicon/metal back electrode). The TCO layer must meet many requirements: high optical transparency in the wavelength region from about 350 to 900 nm, low electrical sheet resistance, stability during handling and deposition of the subsequent layers and during use, a textured (rough) surface to enhance optical absorption of red and near-infrared light, and low-resistance electrical contact to the amorphous silicon p-layer. Fluorine-doped tin oxide has been the TCO used in most commercial superstrate amorphous silicon cells. Fluorine-doped zinc oxide (ZnO:F) was later shown to be even more transparent than fluorine-doped tin oxide, as well as being more resistant to the strongly reducing conditions encountered during the deposition of amorphous silicon. Solar cells based on ZnO:F showed the expected higher currents, but the fill factors were lower than standard cells grown on tin oxide, resulting in no consistent improvement in efficiency. This problem was recently mitigated by using a new proprietary p/buffer layer combination developed at BP Solar.

Gordon, R. G.; Broomhall-Dillard, R.; Liu, X.; Pang, D.; Barton, J.

2001-12-01T23:59:59.000Z

103

Thin Silicon MEMS Contact-Stress Sensor  

SciTech Connect

This work offers the first, thin, MEMS contact-stress (CS) sensor capable of accurate in situ measruement of time-varying, contact-stress between two solid interfaces (e.g. in vivo cartilage contact-stress and body armor dynamic loading). This CS sensor is a silicon-based device with a load sensitive diaphragm. The diaphragm is doped to create piezoresistors arranged in a full Wheatstone bridge. The sensor is similar in performance to established silicon pressure sensors, but it is reliably produced to a thickness of 65 {micro}m. Unlike commercial devices or other research efforts, this CS sensor, including packaging, is extremely thin (< 150 {micro}m fully packaged) so that it can be unobtrusively placed between contacting structures. It is built from elastic, well-characterized materials, providing accurate and high-speed (50+ kHz) measurements over a potential embedded lifetime of decades. This work explored sensor designs for an interface load range of 0-2 MPa; however, the CS sensor has a flexible design architecture to measure a wide variety of interface load ranges.

Kotovsky, J; Tooker, A; Horsley, D A

2009-12-07T23:59:59.000Z

104

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Phase II annual subcontract report, 1 January 1985--31 January 1986  

DOE Green Energy (OSTI)

This report presents results of the second phase of research on high-efficiency, single-junction, monolithic, thin-film a-Si solar cells. Five glow-discharge deposition systems, including a new in-line, multichamber system, were used to grow both doped and undoped a-Si:H. A large number of silane and disilane gas cylinders were analyzed with a gas chromatography/mass spectroscopy system. Strong correlations were found between the breakdown voltage, the deposition rate, the diffusion length, and the conversion efficiency for varying cathode-anode separations in a DC glow-discharge deposition mode. Tin oxide films were grown by chemical vapor deposition with either tetramethyl tin (TMT) or tin tetrachloride (TTC). The best were grown with TMT, but TTC films had a more controlled texture for light trapping and provided a better contact to the p-layer. The best results were obtained with 7059 glass substrates. Efficiencies as high as 10.86% were obtained in p-i-n cells with superlattice p-layers and as high as 10.74% in cells with both superlattice p- and n-layers. Measurements showed that the boron-doping level in the p-layer can strongly affect transport in the i-layer, which can be minimized by reactive flushing before i-layer deposition. Stability of a-Si:H cells is improved by light doping. 51 refs., 64 figs., 21 tabs.

Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; Catalano, A.; D'Aiello, R.V.; Dickson, C.R.; McVeigh, J.; Newton, J.; O'Dowd, J.; Oswald, R.S.; Rajan, K.

1988-09-01T23:59:59.000Z

105

Metal electrode for amorphous silicon solar cells  

DOE Patents (OSTI)

An amorphous silicon solar cell having an N-type region wherein the contact to the N-type region is composed of a material having a work function of about 3.7 electron volts or less. Suitable materials include strontium, barium and magnesium and rare earth metals such as gadolinium and yttrium.

Williams, Richard (Princeton, NJ)

1983-01-01T23:59:59.000Z

106

Indium oxide/n-silicon heterojunction solar cells  

DOE Patents (OSTI)

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1982-12-28T23:59:59.000Z

107

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES  

E-Print Network (OSTI)

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES S. Suresh1 , T.-G. Nieh2 and B.W. Choi2: Mechanical properties; Nano-indentation; Thin films; Copper; Dislocations Introduction Indentation methods films on substrates (e.g., [2,3]) using instrumented indentation. Nano-indentation studies of thin films

Suresh, Subra

108

Efficiency of silicon solar cells containing chromium  

DOE Patents (OSTI)

Efficiency of silicon solar cells containing about 10.sup.15 atoms/cm.sup.3 of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200.degree. C. to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon material.

Frosch, Robert A. Administrator of the National Aeronautics and Space (New Port Beach, CA); Salama, Amal M. (New Port Beach, CA)

1982-01-01T23:59:59.000Z

109

Amorphous and Microcrystalline Silicon Solar Cells: Preprint  

DOE Green Energy (OSTI)

We review the progress made by amorphous silicon solar cells, including the emerging technology of solar cells of microcrystalline silicon. The long-term trend in the efficiency of stabilized laboratory cells based on a-Si:H has been a rise of {approx}0.6 % per year. The recent trend in the a-Si,Ge:H cell efficiency alone, measured in the spectral window assigned to the bottom device in a triple-junction cell, has been an increase of {approx}0.16% per year. These improvements have brought within reach the target of 15% efficiency identified by EPRI and DOE for widespread application. Our review leads to an identification of areas of promising research, with emphasis on the fundamental science required to reach the 15% target, and then to move to the next-level efficiency goal.

Wagner, S. (Princeton University); Carlson, D. E. (Solarex); Branz, H. M. (National Renewable Energy Laboratory)

1999-04-01T23:59:59.000Z

110

Polycrystalline thin-film solar cells and modules  

DOE Green Energy (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

111

Polycrystalline thin-film solar cells and modules  

DOE Green Energy (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

112

Slag-based Refining of Silicon and Solar Cell Advances  

Science Conference Proceedings (OSTI)

Mar 6, 2013 ... There has been a strong commercial push recently towards thinner and thinner silicon in the solar photovoltaic (PV) technologies due to the...

113

On the Segregation of Impurities in Solar Silicon  

Science Conference Proceedings (OSTI)

Presentation Title, On the Segregation of Impurities in Solar Silicon ... Abstract Scope, The exponential increase of the photovoltaic market leads to a shortage of...

114

Improved Amorphous Silicon Solar Cells - Energy Innovation Portal  

Alex Zettl, Jeffrey Grossman and Lucas Wagner of Lawrence Berkeley National Laboratory have invented hydrogenated amorphous silicon solar cells with 30% improved ...

115

Low Cost, High Efficiency Tandem Silicon Solar Cells and LEDs  

iency solar cells that leverage the well-established design and manufacturing technology of silicon cells while delivering the performance previously achievable only by far more complex and expensive tandem solar cells.

116

High temperature investigations of crystalline silicon solar cell materials  

E-Print Network (OSTI)

Crystalline silicon solar cells are a promising candidate to provide a sustainable, clean energy source for the future. In order to bring about widespread adoption of solar cells, much work is needed to reduce their cost. ...

Hudelson, George David Stephen, III

2009-01-01T23:59:59.000Z

117

Metal catalyst technique for texturing silicon solar cells  

SciTech Connect

Textured silicon solar cells and techniques for their manufacture utilizing metal sources to catalyze formation of randomly distributed surface features such as nanoscale pyramidal and columnar structures. These structures include dimensions smaller than the wavelength of incident light, thereby resulting in a highly effective anti-reflective surface. According to the invention, metal sources present in a reactive ion etching chamber permit impurities (e.g. metal particles) to be introduced into a reactive ion etch plasma resulting in deposition of micro-masks on the surface of a substrate to be etched. Separate embodiments are disclosed including one in which the metal source includes one or more metal-coated substrates strategically positioned relative to the surface to be textured, and another in which the walls of the reaction chamber are pre-conditioned with a thin coating of metal catalyst material.

Ruby, Douglas S. (Albuquerque, NM); Zaidi, Saleem H. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

118

Advances in thin-film solar cells for lightweight space photovoltaic power  

SciTech Connect

The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuInSe2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuInSe2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

Landis, G.A.; Bailey, S.G.; Flood, D.J.

1989-01-01T23:59:59.000Z

119

Thin film absorber for a solar collector  

SciTech Connect

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, William G. (Cutchogue, NY)

1985-01-01T23:59:59.000Z

120

Mono-Like Ingot/Wafers Made of Solar-Grade Silicon for Solar Cells ...  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, 2012 TMS Annual Meeting & Exhibition. Symposium , Solar Cell Silicon. Presentation Title, Mono-Like Ingot/Wafers Made of...

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques  

E-Print Network (OSTI)

1 EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques Dr. Todd J. Kaiser - Bozeman Screen Printed Solar Cells · Starting wafer is about 0.5 mm thick and 10 x 10 cm2. The wafer is p-type and lightly doped with Boron (1016/cm3) 2 Screen Printed Solar Cells · Saw Damage Etch ­ The starting wafer

Kaiser, Todd J.

122

Enabling Thin Silicon Technologies for Next Generation Low-cost c ...  

Science Conference Proceedings (OSTI)

Symposium, Solar Cell Silicon ... from fossil fuels to renewable sources has spurred companies to reduce the cost of their solar photovoltaics (PV) systems.

123

Solar cell structure incorporating a novel single crystal silicon material  

DOE Patents (OSTI)

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

1983-01-01T23:59:59.000Z

124

Hydrogenation of Dislocation-Limited Heteroepitaxial Silicon Solar Cells: Preprint  

DOE Green Energy (OSTI)

Post-deposition hydrogenation by remote plasma significantly improves performance of heteroepitaxial silicon solar cells. Heteroepitaxial deposition of thin crystal silicon on sapphire for photovoltaics (PV) is an excellent model system for the study and improvement of deposition on inexpensive Al2O3-coated (100) biaxially-textured metal foils. Without hydrogenation, PV conversion efficiencies are less than 1% on our model system. Performance is limited by carrier recombination at electrically active dislocations that result from lattice mismatch, and other defects. We find that low-temperature hydrogenation at 350 degrees C is more effective than hydrogenation at 610 degrees C. In this work, we use measurements such as spectral quantum efficiency, secondary ion mass spectrometry (SIMS), and vibrational Si-H spectroscopies to understand the effects of hydrogenation on the materials and devices. Quantum efficiency increases most at red and green wavelengths, indicating hydrogenation is affecting the bulk more than the surface of the cells. SIMS shows there are 100X more hydrogen atoms in our cells than dangling bonds along dislocations. Yet, Raman spectroscopy indicates that only low temperature hydrogenation creates Si-H bonds; trapped hydrogen does not stably passivate dangling-bond recombination sites at high temperatures.

Bolen, M. L.; Grover, S.; Teplin, C. W.; Bobela, D.; Branz, H. M.; Stradins, P.

2012-06-01T23:59:59.000Z

125

Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer  

DOE Patents (OSTI)

An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

Carlson, David E. (Yardley, PA)

1982-01-01T23:59:59.000Z

126

Joint Solar Silicon GmbH Co KG JSSI | Open Energy Information  

Open Energy Info (EERE)

Silicon GmbH Co KG JSSI Jump to: navigation, search Name Joint Solar Silicon GmbH & Co KG (JSSI) Place Germany Sector Solar Product Joint venture between Degussa and SolarWorld for...

127

Defect behavior of polycrystalline solar cell silicon  

DOE Green Energy (OSTI)

The major objective of this study, conducted from October 1988 to September 1991, was to gain an understanding of the behavior of impurities in polycrystalline silicon and the influence of these impurities on solar cell efficiency. The authors studied edge-defined film-fed growth (EFG) and cast poly-Si materials and solar cells. With EFG Si they concentrated on chromium-doped materials and cells to determine the role of Cr on solar cell performance. Cast poly-Si samples were not deliberately contaminated. Samples were characterized by cell efficiency, current-voltage, deep-level transient spectroscopy (DLTS), surface photovoltage (SPV), open-circuit voltage decay, secondary ion mass spectrometry, and Fourier transform infrared spectroscopy measurements. They find that Cr forms Cr-B pairs with boron at room temperature and these pairs dissociate into Cr{sub i}{sup +} and B{sup {minus}} during anneals at 210{degrees}C for 10 min. Following the anneal, Cr-B pairs reform at room temperature with a time constant of 230 h. Chromium forms CrSi{sub 2} precipitates in heavily contaminated regions and they find evidence of CrSi{sub 2} gettering, but a lack of chromium segregation or precipitation to grain boundaries and dislocations. Cr-B pairs have well defined DLTS peaks. However, DLTS spectra of other defects are not well defined, giving broad peaks indicative of defects with a range of energy levels in the band gap. In some high-stress, low-efficiency cast poly-Si they detect SiC precipitates, but not in low-stress, high-efficiency samples. SPV measurements result in nonlinear SPV curves in some materials that are likely due to varying optical absorption coefficients due to locally varying stress in the material.

Schroder, D.K.; Park, S.H.; Hwang, I.G.; Mohr, J.B.; Hanly, M.P. [Arizona State Univ., Tempe, AZ (US). Center for Solid State Electronics Research

1993-05-01T23:59:59.000Z

128

Geometry control of recrystallized silicon wafers for solar applications  

E-Print Network (OSTI)

The cost of manufacturing crystalline silicon wafers for use in solar cells can be reduced by eliminating the waste streams caused by sawing ingots into individual wafers. Professor Emanuel Sachs has developed a new method ...

Ruggiero, Christopher W

2009-01-01T23:59:59.000Z

129

Harmful Shunting Mechanisms Found in Silicon Solar Cells (Revised...  

NLE Websites -- All DOE Office Websites (Extended Search)

for the degradation in open-circuit voltage and high dark currents in epitaxial silicon solar cells. The technique is also appli- cable to other PV technologies such as CIGS and...

130

Microcrystalline Silicon Solar Cells: Final Technical Progress Report, 1 July 2001--31 August 2004  

DOE Green Energy (OSTI)

The objective of the research under this subcontract is to explore, identify, evaluate, and develop non-conventional photovoltaic technologies capable of making a breakthrough in the production of low-cost electricity from sunlight. The specific objectives are to (1) develop microwave glow-discharge parameters for the deposition of high-quality microcrystalline silicon (mc-Si:H) thin films at high rate, (2) characterize this microcrystalline material, and (3) fabricate high-efficiency microcrystalline nip solar cells.

Guha, S.; Yang. J.

2005-08-01T23:59:59.000Z

131

Substrate for thin silicon solar cells  

DOE Patents (OSTI)

A substrate for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3.times.10.sup.-3 ohm-cm.

Ciszek, Theodore F. (Evergreen, CO)

1998-01-01T23:59:59.000Z

132

Substrate for thin silicon solar cells  

DOE Patents (OSTI)

A substrate is described for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3{times}10{sup {minus}3} ohm-cm. 4 figs.

Ciszek, T.F.

1998-07-28T23:59:59.000Z

133

Cost-Effective Silicon Wafers for Solar Cells: Direct Wafer Enabling Terawatt Photovoltaics  

SciTech Connect

Broad Funding Opportunity Announcement Project: 1366 is developing a process to reduce the cost of solar electricity by up to 50% by 2020from $0.15 per kilowatt hour to less than $0.07. 1366s process avoids the costly step of slicing a large block of silicon crystal into wafers, which turns half the silicon to dust. Instead, the company is producing thin wafers directly from molten silicon at industry-standard sizes, and with efficiencies that compare favorably with todays state-of-the-art technologies. 1366s wafers could directly replace wafers currently on the market, so there would be no interruptions to the delivery of these products to market. As a result of 1366s technology, the cost of silicon wafers could be reduced by 80%.

None

2010-01-15T23:59:59.000Z

134

Japan Solar Silicon Co Ltd JSS | Open Energy Information  

Open Energy Info (EERE)

Japan Solar Silicon Co Ltd JSS Japan Solar Silicon Co Ltd JSS Jump to: navigation, search Name Japan Solar Silicon Co Ltd (JSS) Place Tokyo, Japan Sector Solar Product A JV company between Chisso, Nippon Mining Holdings, and Toho Titanium, to manufacture and retail solar-grade polysilicon. Coordinates 35.670479°, 139.740921° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":35.670479,"lon":139.740921,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

135

Silicon Valley Power - Solar Electric Buy Down Program | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Solar Electric Buy Down Program Solar Electric Buy Down Program Silicon Valley Power - Solar Electric Buy Down Program < Back Eligibility Commercial Residential Savings Category Solar Buying & Making Electricity Maximum Rebate Residential: $20,000 Program Info State California Program Type Utility Rebate Program Rebate Amount Incentives step down over time as installed capacity goals are met. Check program web site for current incentive level. '''Rebate levels as of 9/20/12:''' Residential: $2.00/watt AC Commercial (up to 100 kW): $1.10/watt AC Commercial (>100 kW to 1 MW): $0.15/kWh for 5 years Provider Silicon Valley Power Silicon Valley Power (SVP) offers incentives for the installation of new grid-connected solar electric (photovoltaic, or PV) systems. Incentive levels will step down over the life of the program as certain installed

136

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Transition metals are one of the main culprits in degrading the efficiency of multicrystalline solar cells. With a suite of x-ray microprobe techniques, a multi-institutional collaboration led by researchers from the University of California, Berkeley, and Berkeley Lab studied the distribution of metal clusters in a variety of multicrystalline solar cells before and after processing. Their discovery that the size, spatial distribution, and chemical binding of metals within clusters is just as important as the total metal concentration in limiting the performance of multicrystalline silicon solar cells led to the concept of defect engineering by optimizing growth and processing sequences to trap metals in their least harmful state.

137

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Transition metals are one of the main culprits in degrading the efficiency of multicrystalline solar cells. With a suite of x-ray microprobe techniques, a multi-institutional collaboration led by researchers from the University of California, Berkeley, and Berkeley Lab studied the distribution of metal clusters in a variety of multicrystalline solar cells before and after processing. Their discovery that the size, spatial distribution, and chemical binding of metals within clusters is just as important as the total metal concentration in limiting the performance of multicrystalline silicon solar cells led to the concept of defect engineering by optimizing growth and processing sequences to trap metals in their least harmful state.

138

Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells  

E-Print Network (OSTI)

Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells Michael D. Kelzenberg, Daniel B Single-nanowire solar cells were created by forming rectifying junctions in electrically contacted vapor-voltage measurements were made under simulated Air Mass 1.5 global illumination. Photovoltaic spectral response

Heaton, Thomas H.

139

Copper doped polycrystalline silicon solar cell  

DOE Patents (OSTI)

Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

Lovelace, Alan M. Administrator of the National Aeronautics and Space (La Canada, CA); Koliwad, Krishna M. (La Canada, CA); Daud, Taher (La Crescenta, CA)

1981-01-01T23:59:59.000Z

140

Formation of thin-film resistors on silicon substrates  

DOE Patents (OSTI)

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

1988-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

III-V/Silicon Lattice-Matched Tandem Solar Cells  

DOE Green Energy (OSTI)

A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated a monolithic III-V-on-silicon tandem solar cell in which most of the III-V layers are nearly lattice-matched to the silicon substrate. The cell includes a GaNPAs top cell, a GaP-based tunnel junction (TJ), and a diffused silicon junction formed during the epitaxial growth of GaNP on the silicon substrate. To accomplish this, we have developed techniques for the growth of high crystalline quality lattice-matched GaNPAs on silicon by metal-organic vapor-phase epitaxy.

Geisz, J.; Olson, J.; Friedman, D.; Kurtz, S.; McMahon, W.; Romero, M.; Reedy, R.; Jones, K.; Norman, A.; Duda, A.; Kibbler, A.; Kramer, C.; Young, M.

2005-01-01T23:59:59.000Z

142

Silicon-on ceramic process. Silicon sheet growth and device developmentt for the Large-Area Silicon Sheet Task of the Low-Cost Solar Array Project. Quarterly report No. 13, October 1-December 31, 1979  

DOE Green Energy (OSTI)

Research on the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating inexpensive ceramic substrates with a thin layer of polycrystalline silicon is reported. The coating methods to be developed are directed toward a minimum-cost process for producing solar cells with a terrestrial conversion efficiency of 11 percent or greater. By applying a graphite coating to one face of a ceramic substrate, molten silicon can be caused to wet only that graphite-coated face and produce uniform thin layers of large-grain polycrystalline silicon; thus, only a minimal quantity of silicon is consumed. A variety of ceramic materials have been dip coated with silicon. The investigation has shown that mullite substrates containing an excess of SiO/sub 2/ best match the thermal expansion coefficient of silicon and hence produce the best SOC layers. With such substrates, smooth and uniform silicon layers 25 cm/sup 2/ in area have been achieved with single-crystal grains as large as 4 mm in width and several cm in length. Crystal length is limited by the length of the substrate. The thickness of the coating and the size of the crystalline grains are controlled by the temperature of the melt and the rate at which the substrate is withdrawn from the melt. The solar-cell potential of this SOC sheet silicon is promising. To date, solar cells with areas from 1 to 10 cm/sup 2/ have been fabricated from material with an as-grown surface. Conversion efficiencies of about 10 percent with antireflection (AR) coating have been achieved. Such cells typically have open-circuit voltage and short-circuit current densities of 0.55V and 23 mA/cm/sup 2/, respectively.

Chapman, P W; Zook, J D; Grung, B L; McHenry, K; Schuldt, S B

1980-02-15T23:59:59.000Z

143

Deposition, fabrication and analysis of polycrystalline silicon MIS solar cells. Final Report, January 1-December 31, 1979  

DOE Green Energy (OSTI)

Discussion of MIS cell fabrication techniques, protovoltaic response data, I-V-T analysis to reveal conduction mechanisms, a detailed computer model, optimum MIS solar cell design, surface state effects, Auger studies, reliability studies and e-beam deposition of thin silicon films are included. The most important features of the work during 1979 include the one pump-down fabrication process, establishing a consistent fabrication sequence, achieving 13% efficiency of 2 cm/sup 2/ area, an evaluation of conduction mechanisms, establishing a detailed computer model and setting up an improved e-beam system to deposit thin silicon films. Details are reported. (WHK)

Anderson, W.A.

1980-03-01T23:59:59.000Z

144

Transmissive metallic contact for amorphous silicon solar cells  

DOE Patents (OSTI)

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Madan, A.

1984-11-29T23:59:59.000Z

145

Silicon Surface Texturing by Electro-Deoxidation of a Thin Silica ...  

Science Conference Proceedings (OSTI)

Presentation Title, Silicon Surface Texturing by Electro-Deoxidation of a Thin Silica Layer in Molten Salt. Author(s), Eimutis Juzeliunas, Antony Cox, Derek Fray

146

Anisotropic dewetting in ultra-thin single-crystal silicon-on-insulator films  

E-Print Network (OSTI)

The single crystal silicon-on-insulator thin film materials system represents both an ideal model system for the study of anisotropic thin film dewetting as well as a technologically important system for the development ...

Danielson, David T. (David Thomas)

2008-01-01T23:59:59.000Z

147

Solar EnerTech PAIS Jin Yu Silicon Wuhai Municipal Gvrnt JV | Open Energy  

Open Energy Info (EERE)

PAIS Jin Yu Silicon Wuhai Municipal Gvrnt JV PAIS Jin Yu Silicon Wuhai Municipal Gvrnt JV Jump to: navigation, search Name Solar EnerTech, PAIS, Jin Yu Silicon, & Wuhai Municipal Gvrnt JV Place Inner Mongolia Autonomous Region, China Sector Solar Product A solar silicon processing joint venture between Solar EnerTech, PAIS, Jin Yu Silicon, and the Wuhai Municipal Government was formed. References Solar EnerTech, PAIS, Jin Yu Silicon, & Wuhai Municipal Gvrnt JV[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar EnerTech, PAIS, Jin Yu Silicon, & Wuhai Municipal Gvrnt JV is a company located in Inner Mongolia Autonomous Region, China . References ↑ "[ Solar EnerTech, PAIS, Jin Yu Silicon, & Wuhai Municipal

148

Silicon on ceramic process. Silicon sheet growth development for the Large-Area Silicon Sheet Task of the Low-Cost Silicon Solar Array Project. Annual report No. 2, September 17, 1976--September 19, 1977  

DOE Green Energy (OSTI)

The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. In the past year significant progress was made in all areas of the program. The physical and chemical properties of the standard mullite refractory used for the majority of the coating runs (McDanel MV20 and Coors S1SI) have been characterized. A number of experimental compositions have been identified and procured from Coors. Characterization of the standard compositions revealed that the thermal expansion of mullite depends on both relative amounts of glass phase and on the impurity level in the glass. Since the thermal expansion in mullite exceeds that of silicon, the silicon coating should be in a state of compression. This was confirmed by x-ray measurements. After modifying and cleaning the dip-coating facility, silicon on ceramic (SOC) solar cells were fabricated which demonstrate that the SOC process can produce silicon of solar cell quality. SOC cells having 1 cm/sup 2/ active areas demonstrated measured conversion efficiencies as high as 7.2 percent. Typical open-ciruit voltages (V/sub oc/) and short-circuit current densities (J/sub sc/) were 0.51 volt and 20 mA/cm/sup 2/, respectively. Since the active surface of these solar cells is a highly reflective ''as-grown'' surface, one can expect improvement in J/sub sc/ after an anti-reflection (AR) coating is applied. Results of an economic analysis of the SOC process are presented.

Zook, J.D.; Heaps, J.D.; Maciolek, R.B.; Koepke, B.; Butter, C.D.; Schuldt, S.B.

1977-09-30T23:59:59.000Z

149

Point-Contact Silicon Solar Cells  

Science Conference Proceedings (OSTI)

A new type of silicon photovoltaic cell called the point-contact cell is under development. This report describes the cell and an analytic model developed for use in design optimization. Necessary future cell development work is discussed.

1983-05-01T23:59:59.000Z

150

Modelling and fabrication of high-efficiency silicon solar cells  

DOE Green Energy (OSTI)

This report covers the research conducted on modelling and development of high-efficiency silicon solar cells during the period May 1989 to August 1990. First, considerable effort was devoted toward developing a ray-tracing program for the photovoltaic community to quantify and optimize surface texturing for solar cells. Second, attempts were made to develop a hydrodynamic model for device simulation. Such a model is somewhat slower than drift-diffusion type models like PC-1D, but it can account for more physical phenomena in the device, such as hot carrier effects, temperature gradients, thermal diffusion, and lattice heat flow. In addition, Fermi-Dirac statistics have been incorporated into the model to deal with heavy doping effects more accurately. Third and final component of the research includes development of silicon cell fabrication capabilities and fabrication of high-efficiency silicon cells. 84 refs., 46 figs., 10 tabs.

Rohatgi, A.; Smith, A.W.; Salami, J. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Electrical Engineering] [Georgia Inst. of Tech., Atlanta, GA (United States). School of Electrical Engineering

1991-10-01T23:59:59.000Z

151

Stress Management: Revealing Defects in Thin Silicon Films  

NLE Websites -- All DOE Office Websites (Extended Search)

caused by the manufacturing process for strained-silicon films. Strained silicon is a new, rapidly developing material for building enhanced-performance silicon-based...

152

Silicon Oxynitride Thin Film Barriers for PV Packaging (Poster)  

DOE Green Energy (OSTI)

Dielectric, adhesion-promoting, moisture barriers comprised of silicon oxynitride thin film materials (SiOxNy with various material stoichiometric compositions x,y) were applied to: 1) bare and pre-coated soda-lime silicate glass (coated with transparent conductive oxide SnO2:F and/or aluminum), and polymer substrates (polyethylene terephthalate, PET, or polyethylene napthalate, PEN); plus 2) pre- deposited photovoltaic (PV) cells and mini-modules consisting of amorphous silicon (a-Si) and copper indium gallium diselenide (CIGS) thin-film PV technologies. We used plasma enhanced chemical vapor deposition (PECVD) process with dilute silane, nitrogen, and nitrous oxide/oxygen gas mixtures in a low-power (< or = 10 milliW per cm2) RF discharge at ~ 0.2 Torr pressure, and low substrate temperatures < or = 100(degrees)C, over deposition areas ~ 1000 cm2. Barrier properties of the resulting PV cells and coated-glass packaging structures were studied with subsequent stressing in damp-heat exposure at 85(degrees)C/85% RH. Preliminary results on PV cells and coated glass indicate the palpable benefits of the barriers in mitigating moisture intrusion and degradation of the underlying structures using SiOxNy coatings with thicknesses in the range of 100-200 nm.

del Cueto, J. A.; Glick, S. H.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

2006-10-03T23:59:59.000Z

153

GCL Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu  

Open Energy Info (EERE)

Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu Zhongneng Polysilicon Jump to: navigation, search Name GCL Solar Energy Technology Holdings (formerly GCL Silicon, aka Jiangsu Zhongneng Polysilicon) Place Xuzhou, Jiangsu Province, China Zip 221131 Sector Solar Product China-based solar grade polysilicon producer. Coordinates 34.255489°, 117.190201° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":34.255489,"lon":117.190201,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

154

Method for forming indium oxide/n-silicon heterojunction solar cells  

DOE Patents (OSTI)

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1984-03-13T23:59:59.000Z

155

Semiconductor grade, solar silicon purification project. Final technical report  

DOE Green Energy (OSTI)

Motorola's low cost poly silicon program is described. In the process, SiF/sub 4/, a low cost by-product is reacted with mg silicon to form SiF/sub 2/ gas which is polymerized. The (SiF/sub 2/)/sub x/ polymer is heated forming volatile Si/sub x/F/sub y/ homologues which disproportionate (C.V.D.) on a silicon particle bed forming silicon and SiF/sub 4/. During the initial phases of the investigation the silicon analysis procedure relied heavily on S.S.M.S. and E.S. analysis. This analysis demonstrated that major purification had occurred and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, more recent electrical analysis via crystal growth reveals that the product contains compensated phosphorus and boron. Work on the control or removal of the electrically active donors and acceptors could yield a product suitable for solar application. The low projected product cost and short energy payback time suggest that the economics of this process will result in a cost less than the J.P.L./D.O.E. goal of $10/Kg (1975 dollars). Finally, assuming a successful demonstration of a pilot facility, the process appears to be readily scalable to a major silicon purification facility as was proposed by Motorola and R. Katzen.

Ingle, W.M.; Rosler, R.S.; Thompson, S.W.; Chaney, R.E.

1979-12-10T23:59:59.000Z

156

The Silicon Solar Cell Turns 50  

NLE Websites -- All DOE Office Websites (Extended Search)

Daryl Chapin, Calvin Fuller, and Gerald Daryl Chapin, Calvin Fuller, and Gerald Pearson likely never imagined inventing a solar cell that would revolutionize the photovoltaics industry. There wasn't even a photovoltaics industry to revolu- tionize in 1952. The three scientists were simply trying to solve problems within the Bell tele- phone system. Traditional dry cell batteries, which worked fine in mild climates, degraded too rapidly in the tropics and ceased to work when needed. The company therefore asked its famous research arm-Bell Laboratories-to explore alternative sources of freestand- ing power. Daryl Chapin got the assign- ment. At that time, his job was to test wind machines, thermoelectric gensets, and steam engines. Being a solar energy enthusiast, he suggested that the investi- gation include solar cells. His supervisor

157

High-efficiency concentrator silicon solar cells  

DOE Green Energy (OSTI)

This report presents results from extensive process development in high-efficiency Si solar cells. An advanced design for a 1.56-cm{sup 2} cell with front grids achieved 26% efficiency at 90 suns. This is especially significant since this cell does not require a prismatic cover glass. New designs for simplified backside-contact solar cells were advanced from a status of near-nonfunctionality to demonstrated 21--22% for one-sun cells in sizes up to 37.5 cm{sup 2}. An efficiency of 26% was achieved for similar 0.64-cm{sup 2} concentrator cells at 150 suns. More fundamental work on dopant-diffused regions is also presented here. The recombination vs. various process and physical parameters was studied in detail for boron and phosphorous diffusions. Emitter-design studies based solidly upon these new data indicate the performance vs design parameters for a variety of the cases of most interest to solar cell designers. Extractions of p-type bandgap narrowing and the surface recombination for p- and n-type regions from these studies have a generality that extends beyond solar cells into basic device modeling. 68 refs., 50 figs.

Sinton, R.A.; Cuevas, A.; King, R.R.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

1990-11-01T23:59:59.000Z

158

Accurate performance measurement of silicon solar cells  

E-Print Network (OSTI)

of the research is a testing `recipe' that uses low-cost equipment and gives an estimate of measurement is an important part of the solar cell manufacturing process. Two classes of measurement can be considered measurement ­ for cell sorting and process improvement. This work describes techniques that address both

159

High-efficiency solar cells using HEM silicon  

DOE Green Energy (OSTI)

Developments in Heat Exchanger Method (HEM) technology for production of multicrystalline silicon ingot production have led to growth of larger ingots (55 cm square cross section) with lower costs and reliability in production. A single reusable crucible has been used to produce 18 multicrystalline 33 cm square cross section 40 kg ingots, and capability to produce 44 cm ingots has been demonstrated. Large area solar cells of 16.3% (42 cm{sup 2}) and 15.3% (100 cm{sup 2}) efficiency have been produced without optimization of the material production and the solar cell processing.

Khattak, C.P.; Schmid, F. [Crystal Systems, Inc., Salem, MA (United States); Schubert, W.K. [Sandia National Labs., Albuquerque, NM (United States)

1994-12-31T23:59:59.000Z

160

Chlorine Free Technology for Solar-Grade Silicon Manufacturing: Preprint  

DOE Green Energy (OSTI)

Due to the development of the solar energy industry, a significant increase of polysilicon feedstock (PSF) production will be required in near future. The creation of special technology of solar grade polysilicon feedstock production is an important problem. Today, semiconductor-grade polysilicon is mainly manufactured using the trichlorosilane (SiHCl3) distillation and reduction. The feed-stock for trichlorosilane is metallurgical-grade silicon, the product of reduction of natural quartzite (silica). This polysilicon production method is characterized by high energy consumption and large amounts of wastes, containing environmentally harmful chlorine based compounds. In the former USSR the principles of industrial method for production of monosilane and polycrystalline silicon by thermal decomposition of monosilane were founded. This technology was proved in industrial scale at production of gaseous monosilane and PSF. We offered new chlorine free technology (CFT). Originality and novelty of the process were confirmed by Russian and US patents.

Strebkov, D. S.; Pinov, A. P.; Zadde, V. V.; Lebedev, E. N.; Belov, E. P.; Efimov, N. K.; Kleshevnikova, S. I.; Touryan, K.; Bleak, D.

2004-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint  

Science Conference Proceedings (OSTI)

We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

2011-07-01T23:59:59.000Z

162

Processes for producing low cost, high efficiency silicon solar cells  

SciTech Connect

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x.

Rohatgi, Ajeet (Marietta, GA); Chen, Zhizhang (Duluth, GA); Doshi, Parag (Atlanta, GA)

1996-01-01T23:59:59.000Z

163

Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs November 2, 2010 - 2:00pm Addthis REC Silicon received a $154 million 48C tax credit for a $1.7 billion expansion of its Moses Lake, WA, plant. | Photo courtesy of REC Silicon | REC Silicon received a $154 million 48C tax credit for a $1.7 billion expansion of its Moses Lake, WA, plant. | Photo courtesy of REC Silicon | Stephen Graff Former Writer & editor for Energy Empowers, EERE In most industries, if it's expensive to make, it's probably expensive to buy. This is particularly evident in the solar world. Refining the raw material used in photovoltaic panels, silicon, is not a cheap endeavor, and has kept the price of panels more expensive than other energy sources.

164

Silicon Ink for High-Efficiency Solar Cells Captures a Share of the Market (Fact Sheet)  

DOE Green Energy (OSTI)

Fact sheet on 2011 R&D 100 Award winner Silicon Ink. Liquid silicon has arrived, and with it comes a power boost for solar cells and dramatic cost savings for cell manufacturers.

Not Available

2011-08-01T23:59:59.000Z

165

Ninth workshop on crystalline silicon solar cell materials and processes: Summary discussion sessions  

DOE Green Energy (OSTI)

This report is a summary of the panel discussions included with the Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme for the workshop was ``R and D Challenges and Opportunities in Si Photovoltaics.'' This theme was chosen because it appropriately reflects a host of challenges that the growing production of Si photovoltaics will be facing in the new millennium. The anticipated challenges will arise in developing strategies for cost reduction, increased production, higher throughput per manufacturing line, new sources of low-cost Si, and the introduction of new manufacturing processes for cell production. At the same time, technologies based on CdTe and CIS will come on line posing new competition. With these challenges come new opportunities for Si PV to wean itself from the microelectronics industry, to embark on a more aggressive program in thin-film Si solar cells, and to try new approaches to process monitoring.

Sopori, B.; Tan, T.; Swanson, D.; Rosenblum, M.; Sinton, R.

1999-11-23T23:59:59.000Z

166

Silicon halide-alkali metal flames as a source of solar grade silicon. Final report  

DOE Green Energy (OSTI)

The object of this program was to determine the feasibility of using continuous high-temperature reactions of alkali metals and silicon halides to produce silicon in large quantities and of suitable purity for use in the production of photovoltaic solar cells. Equilibrium calculations showed that a range of conditions were available where silicon was produced as a condensed phase but the byproduct alkali metal salt was a vapor. A process was proposed using the vapor phase reaction of Na with SiCl/sub 4/. Low pressure experiments were performed demonstrating that free silicon was produced and providing experience with the construction of reactant vapor generators. Further experiments at higher reagent flow rates were performed in a low temperature flow tube configuration with co-axial injection of reagents. Relatively pure silicon was produced in these experiments. A high temperature graphite flow tube was built and continuous separation of Si from NaCl was demonstrated. A larger-scaled well-stirred reactor was built. Experiments were performed to investigate the compatibility of graphite-based reactor materials of construction with sodium. At 1100 to 1200 K none of these materials were found to be suitable. At 1700 K the graphites performed well with little damage except to coatings of pyrolytic graphite and silicon carbide which were damaged.

Olson, D.B.; Miller, W.J.; Gould, R.K.

1980-01-01T23:59:59.000Z

167

Polycrystalline Thin Film Solar Cell Technologies: Preprint  

DOE Green Energy (OSTI)

Rapid progress is being made by CdTe and CIGS-based thin-film PV technologies in entering commercial markets.

Ullal, H. S.

2008-12-01T23:59:59.000Z

168

AOS Solar Inc | Open Energy Information  

Open Energy Info (EERE)

AOS Solar Inc Jump to: navigation, search Name AOS Solar Inc Product Manufacturer of thin-film silicon-on-glass. References AOS Solar Inc1 LinkedIn Connections CrunchBase...

169

Combinatorial Approach to Thin-Film Silicon Materials and Devices: Preprint  

DOE Green Energy (OSTI)

We apply combinatorial approaches to thin-film Si materials and device research. Our hot-wire chemical vapor deposition chamber is fitted with substrate xyz translation, a motorized shutter, and interchangable shadow masks to implement various combinatorial methods. For example, we have explored, in detail, the transition region through which thin Si changes from amorphous to microcrystalline silicon. This transition is very sensitive to deposition parameters such as hydrogen-to-silane dilution of the source gas, chamber pressure, and substrate temperature. A material library, on just a few substrates, led to a three-dimensional map of the transition as it occurs in our deposition system. This map guides our scientific studies and enables us to use several distinct transition materials in our solar-cell optimization research. We also grew thickness-graded wedge samples spanning the amorphous-to-microcrystalline Si transition. These single stripes map the temporal change of the thin silicon phase onto a single spatial dimension. Therefore, the structural, optical, and electrical properties can easily be studied through the phase transition. We have examined the nature of the phase change on the wedges with Raman spectroscopy, atomic force microscopy, extended x-ray absorption fine structure (EXAFS), x-ray absorption near-edge spectroscopy (XANES), ultraviolet reflectivity, and other techniques. Combinatorial techniques also accelerate our device research. In solar cells, for example, the combinatorial approach has significantly accelerated the optimization process of p-, i-, n-, and buffer layers through wide exploration of the complex space of growth parameters and layer thicknesses. Again, only a few deposition runs are needed. It has also been useful to correlate the materials properties of single layers in a device to their performance in the device. We achieve this by depositing layers that extend beyond the device dimensions to permit independent characterization of the layers. Not only has the combinatorial approach greatly increased the rate of materials and device experimentation in our laboratory, it has also been a powerful tool leading to a better understanding of structure-property relationships in thin film Si.

Wang, Q.; Moutinho, H.; To, B.; Perkins, J.; Ginley, D.; Branz, H. M.; Tessler, L. R.; Han, D.

2003-04-01T23:59:59.000Z

170

Distribution of Oxygen in mc-Silicon Ingots for Solar Cell Applications  

Science Conference Proceedings (OSTI)

May 1, 2007 ... Distribution of Oxygen in mc-Silicon Ingots for Solar Cell Applications by Marisa Di Sabatino, Eivind J. vrelid, Espen Olsen, Thorvald A. Engh...

171

Purification of solar-grade silicon by induction melting in cold crucible  

Science Conference Proceedings (OSTI)

Abstract Scope, New method for purification of SoG-Si (solar-grade silicon) is ... suitable for using in directional solidification process (DS) for PV application.

172

Simulation of Device Parameters of High Efficiency Multicrystalline Silicon Solar Cells  

Science Conference Proceedings (OSTI)

The results of the simulation of the reported experimental results of high efficiency multicrystalline silicon (mc-Si) solar cells, using PC1D software, are reported in this study. Results obtained by various groups have been incorporated and compared in this study. The highest efficiency reported so far for mc-Si solar cells is 20{center_dot}4% and 17-18% by research laboratories and commercial houses, respectively. The efficiency can be further enhanced if passivation characteristics on both the front and back surface are improved. The role of back surface recombination has become more significant in light of the use of thin mc-Si wafers by the solar cell industry. Based on the passivation characteristics and considering the understanding of the past three decades of studies, the authors have proposed and simulated a structure for mc-Si solar cells to improve the performance of the same. The results of our modeled structure of mc-Si solar cell show an efficiency of 21{center_dot}88% with short-circuit current density, J{sub sc} = 39{center_dot}39 mA/cm2, and open circuit voltage, V{sub oc} = 0{center_dot}666 V.

Budhraja, V.; Misra, D.; Ravindra, N. M.

2011-11-01T23:59:59.000Z

173

Low emissivity high-temperature tantalum thin film coatings for silicon devices  

E-Print Network (OSTI)

The authors study the use of thin ( ? 230?nm) tantalum (Ta) layers on silicon (Si) as a low emissivity (high reflectivity) coating for high-temperature Si devices. Such coatings are critical to reduce parasitic radiation ...

Rinnerbauer, Veronika

174

Bangkok Solar Co Ltd | Open Energy Information  

Open Energy Info (EERE)

Co Ltd Jump to: navigation, search Name Bangkok Solar Co Ltd Place Chachoengsao, Thailand Zip 24140 Product Manufacturer of thin-film amorphous silicon modules, distributes in...

175

And the Award Goes to... Silicon Ink Solar Technology Supported by  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

And the Award Goes to... Silicon Ink Solar Technology Supported by And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator July 19, 2011 - 5:00pm Addthis Innovalight’s silicon ink technology | Photo courtesy of Innovalight Innovalight's silicon ink technology | Photo courtesy of Innovalight What does this mean for me? Pioneering startup Innovalight partnered with NREL to invent the first liquid silicon on the market. When paired with Innovalight's industrial screen printing process, this silicon ink technology offers a novel path to producing solar cells with higher conversion efficiencies at lower cost. A pair of presenters approach the microphone carrying a sealed envelope, a faint drum roll is heard, cameras zoom in on the anxious faces of the

176

And the Award Goes to... Silicon Ink Solar Technology Supported by  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

And the Award Goes to... Silicon Ink Solar Technology Supported by And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator July 19, 2011 - 5:00pm Addthis Innovalight’s silicon ink technology | Photo courtesy of Innovalight Innovalight's silicon ink technology | Photo courtesy of Innovalight What does this mean for me? Pioneering startup Innovalight partnered with NREL to invent the first liquid silicon on the market. When paired with Innovalight's industrial screen printing process, this silicon ink technology offers a novel path to producing solar cells with higher conversion efficiencies at lower cost. A pair of presenters approach the microphone carrying a sealed envelope, a faint drum roll is heard, cameras zoom in on the anxious faces of the

177

Beyond Silicon: Cutting the Costs of Solar Power | U.S. DOE Office of Science (SC)  

NLE Websites -- All DOE Office Websites (Extended Search)

Beyond Silicon: Cutting the Costs of Solar Power Beyond Silicon: Cutting the Costs of Solar Power Stories of Discovery & Innovation Beyond Silicon: Cutting the Costs of Solar Power Enlarge Photo Courtesy of University of Illinois Mechanically flexible, high efficiency solar module that uses an interconnected array of microscale GaAs photovoltaic cells, grown in a multilayer stack on a wafer and then printed onto a sheet of plastic. Enlarge Photo 04.15.11 Beyond Silicon: Cutting the Costs of Solar Power New method of fabricating semiconductors from gallium arsenide promises more affordable solar power, improved semiconductor devices. The biggest single barrier to widespread adoption of solar power continues to be the cost of solar cells. University of Illinois materials scientists supported by the DOE Office of Science have scored a

178

Simulation and process development for ion-implanted N-type silicon solar cells .  

E-Print Network (OSTI)

??As the efficiency potential for the industrial P-type Al-BSF silicon solar cell reaches its limit, new solar cell technologies are required to continue the pursuit (more)

Ning, Steven

2013-01-01T23:59:59.000Z

179

High-performance porous silicon solar cell development. Final report, October 1, 1993--September 30, 1995  

DOE Green Energy (OSTI)

The goal of the program was to demonstrate use of porous silicon in new solar cell structures. Porous silicon technology has been developed at Spire for producing visible light-emitting diodes (LEDs). The major aspects that they have demonstrated are the following: porous silicon active layers have been made to show photovoltaic action; porous silicon surface layers can act as antireflection coatings to improve the performance of single-crystal silicon solar cells; and porous silicon surface layers can act as antireflection coatings on polycrystalline silicon solar cells. One problem with the use of porous silicon is to achieve good lateral conduction of electrons and holes through the material. This shows up in terms of poor blue response and photocurrents which increase with increasing reverse bias applied to the diode.

Maruska, P. [Spire Corp., Bedford, MA (United States)

1996-09-01T23:59:59.000Z

180

Polycrystalline Thin-Film Multijunction Solar Cells  

DOE Green Energy (OSTI)

We present a digest of our research on the thin-film material components that comprise the top and bottom cells of three different material systems and the tandem devices constructed from them.

Noufi, R.; Wu, X.; Abu-Shama, J.; Ramanathan, K; Dhere, R.; Zhou, J.; Coutts, T.; Contreras, M.; Gessert, T.; Ward, J. S.

2005-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Features of electron mobility in a thin silicon layer in an insulator-silicon-insulator structure  

Science Conference Proceedings (OSTI)

Electron mobility in a thin silicon layer of a metal-insulator-semiconductor-insulator-metal system is studied as a function of longitudinal and transverse electric fields (in wide ranges of their values), temperature in the range 1.7 to 400 K, and changes in {gamma}-ray irradiation conditions. It is shown that, in the temperature range 400 to {approx}100 K, electron mobility increases in accordance with the mechanism of electron scattering at an acoustic phonon, while, with a subsequent decrease in temperature to the temperature of liquid helium, mobility drops because the Coulomb scattering of electrons at charged surface centers starts to dominate. It is demonstrated that as a result of {gamma}-ray irradiation, electron mobility decreases and the degree of this decrease strongly depends on the electrical mode of the sensor during irradiation.

Leonov, A. V., E-mail: lave@sci.lebedev.ru; Mokrushin, A. D.; Omeljanovskaja, N. M. [Russian Academy of Sciences, Institute for Microelectronics Technology and High-Purity Materials (Russian Federation)

2012-04-15T23:59:59.000Z

182

EE580 Solar Cells Todd J. Kaiser  

E-Print Network (OSTI)

7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 06 · Solar Cell Materials & Structures 1Montana State University: Solar Cells Lecture 6: Solar Cells Solar Cell Technologies · A) Crystalline Silicon · B) Thin Film · C) Group III-IV Cells 2Montana State University: Solar Cells Lecture 6: Solar

Kaiser, Todd J.

183

Ambipolar charge transport in microcrystalline silicon thin-film transistors  

Science Conference Proceedings (OSTI)

Hydrogenated microcrystalline silicon ({mu}c-Si:H) is a promising candidate for thin-film transistors (TFTs) in large-area electronics due to high electron and hole charge carrier mobilities. We report on ambipolar TFTs based on {mu}c-Si:H prepared by plasma-enhanced chemical vapor deposition at temperatures compatible with flexible substrates. Electrons and holes are directly injected into the {mu}c-Si:H channel via chromium drain and source contacts. The TFTs exhibit electron and hole charge carrier mobilities of 30-50 cm{sup 2}/V s and 10-15 cm{sup 2}/V s, respectively. In this work, the electrical characteristics of the ambipolar {mu}c-Si:H TFTs are described by a simple analytical model that takes the ambipolar charge transport into account. The analytical expressions are used to model the transfer curves, the potential and the net surface charge along the channel of the TFTs. The electrical model provides insights into the electronic transport of ambipolar {mu}c-Si:H TFTs.

Knipp, Dietmar; Marinkovic, M. [Electronic Devices and Nanophotonics Laboratory, Jacobs University Bremen, 28759 Bremen (Germany); Chan, Kah-Yoong [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); Faculty of Engineering, Multimedia University, Cyberjaya, 63100 Selangor (Malaysia); Gordijn, Aad [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); Stiebig, Helmut [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); Malibu Solar GmbH and Co. KG, 33609 Bielefeld (Germany)

2011-01-15T23:59:59.000Z

184

Silicon-on ceramic process. Silicon sheet growth and device development for the large-area silicon sheet and cell development tasks of the low-cost solar array project. Quarterly report No. 12, April 2, 1979-June 29, 1979  

DOE Green Energy (OSTI)

The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon. We plan to do this by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. During the quarter, significant progress was demonstrated in several areas: (1) a 10-cm/sup 2/ cell having 9.9 percent conversion efficiency (AM1, AR) was fabricated; (2) the Honeywall-sponsored SCIM coating development succeeded in producing a 225-cm/sup 2/ layer of sheet silicon (18 inches x 2 inches); and (3) 100 ..mu..m-thick coatings at pull speed of 0.15 cm/sec wer$obta9ned, although apoproximately 50 percent of the layer exhibited dendritic growth. Other results and accomplishments during the quarter are reported in detail. (WHK)

Chapman, P.W.; Zook, J.D.; Heaps, J.D.; Grung, B.L.; Koepke, B.; Schuldt, S.B.

1979-07-31T23:59:59.000Z

185

Back-Contact Crystalline-Silicon Solar Cells and Modules  

DOE Green Energy (OSTI)

This paper summarizes recent progress in the development of back-contact crystalline-silicon (c-Si) solar cells and modules at Sandia National Laboratories. Back-contact cells have potentially improved efficiencies through the elimination of grid obscuration and allow for significant simplifications in the module assembly process. Optimization of the process sequence has improved the efficiency of our back-contact cell (emitter wrap through) from around 12% to near 17% in the past 12 months. In addition, recent theoretical work has elucidated the device physics of emitter wrap-through cells. Finally, improvements in the assembly processing back-contact cells are described.

Bode, M.D.; Garrett, S.E.; Gee, J.M.; Jimeno, J.C.; Smith, D.D.

1999-03-10T23:59:59.000Z

186

Gas dynamic aspects of silicon thin layers deposition using excitation of a free jet of the working gas mixture by an electron beam  

Science Conference Proceedings (OSTI)

A film of microcrystalline silicon ({mu}c-Si:H) deposited at low temperature is a promising material for thin-film silicon solar cells with high efficiency and high stability. To deposit silicon thin films with high deposition rate and high quality, a novel gas-jet deposition method has been developed. The paper is devoted to experimental and numerical study of the method from the gas dynamic point of view. A numerical model of the flow field of the working gas mixture in the device was developed that provides predictions of the film thickness distribution over the substrate surface and was found to describe the measured data satisfactory. The model may be used to optimize the operating parameters of the device.

Skovorodko, P. A.; Sharafutdinov, R. G.; Shchukin, V. G.; Konstantinov, V. O. [CJSC Institute of Plasma Chemical Technologies, 630090, Novosibirsk (Russian Federation) and Kutateladze Institute of Thermophysics, 630090, Novosibirsk (Russian Federation)

2012-11-27T23:59:59.000Z

187

Silicon Heterojunction Solar Cell Characterization and Optimization Using In Situ and Ex Situ Spectroscopic Ellipsometry: Preprint  

DOE Green Energy (OSTI)

We use in-situ and ex-situ spectroscopic ellipsometry to characterize the optical, electronic, and structural properties of individual layers and completed silicon heterojunction devices. The combination of in-situ measurements during thin film deposition with ex-situ measurements of completed devices allows us to understand both the growth dynamics of the materials and the effects of each processing step on material properties. In-situ ellipsometry measurements enable us to map out how the optical properties change with deposition conditions, pointing the way towards reducing the absorption loss and increasing device efficiency. We use the measured optical properties and thickness of the i-, n-, and p-layers in optical device modeling to determine how the material properties affect device performance. Our best solar energy conversion efficiencies are 16.9% for a non-textured, single-sided device with an aluminum back surface field contact on a p-type float zone silicon wafer, and 17.8% for a textured double-sided device on a p-type float zone silicon wafer.

Levi, D.; Iwaniczko, E.; Page, M.; Branz, H.; Wang, T.

2006-05-01T23:59:59.000Z

188

The ultra-thin solar cells that could generate power through windows  

E-Print Network (OSTI)

The ultra-thin solar cells that could generate power through windows By Claire Bates Last updated, generating enough electricity to power the GPS or air conditioning. Solar cells, which convert solar energy into tinted windows Page 1 of 3The ultra-thin solar cells that could generate power through windows | Mail

Rogers, John A.

189

Silicon-integrated thin-film structure for electro-optic applications  

DOE Patents (OSTI)

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

McKee, Rodney A. (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

190

Processes for producing low cost, high efficiency silicon solar cells  

DOE Patents (OSTI)

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure.

Rohatgi, Ajeet (Marietta, GA); Doshi, Parag (Altanta, GA); Tate, John Keith (Lawrenceville, GA); Mejia, Jose (Atlanta, GA); Chen, Zhizhang (Duluth, GA)

1998-06-16T23:59:59.000Z

191

Processes for producing low cost, high efficiency silicon solar cells  

DOE Patents (OSTI)

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime {tau} and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime {tau} and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO{sub x}. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure. 28 figs.

Rohatgi, A.; Doshi, P.; Tate, J.K.; Mejia, J.; Chen, Z.

1998-06-16T23:59:59.000Z

192

Thin, High Lifetime Silicon Wafers with No Sawing; Re-crystallization in a Thin Film Capsule  

SciTech Connect

The project fits within the area of renewable energy called photovoltaics (PV), or the generation of electricity directly from sunlight using semiconductor devices. PV has the greatest potential of any renewable energy technology. The vast majority of photovoltaic modules are made on crystalline silicon wafers and these wafers accounts for the largest fraction of the cost of a photovoltaic module. Thus, a method of making high quality, low cost wafers would be extremely beneficial to the PV industry The industry standard technology creates wafers by casting an ingot and then sawing wafers from the ingot. Sawing rendered half of the highly refined silicon feedstock as un-reclaimable dust. Being a brittle material, the sawing is actually a type of grinding operation which is costly both in terms of capital equipment and in terms of consumables costs. The consumables costs associated with the wire sawing technology are particularly burdensome and include the cost of the wire itself (continuously fed, one time use), the abrasive particles, and, waste disposal. The goal of this project was to make wafers directly from molten silicon with no sawing required. The fundamental concept was to create a very low cost (but low quality) wafer of the desired shape and size and then to improve the quality of the wafer by a specialized thermal treatment (called re-crystallization). Others have attempted to create silicon sheet by recrystallization with varying degrees of success. Key among the difficulties encountered by others were: a) difficulty in maintaining the physical shape of the sheet during the recrystallization process and b) difficulty in maintaining the cleanliness of the sheet during recrystallization. Our method solved both of these challenges by encapsulating the preform wafer in a protective capsule prior to recrystallization (see below). The recrystallization method developed in this work was extremely effective at maintaining the shape and the cleanliness of the wafer. In addition, it was found to be suitable for growing very large crystals. The equipment used was simple and inexpensive to operate. Reasonable solar cells were fabricated on re-crystallized material.

Emanuel Sachs Tonio Buonassisi

2013-01-16T23:59:59.000Z

193

Role of point defects/defect complexes in silicon device processing. Book of abstracts, fourth workshop  

DOE Green Energy (OSTI)

The 41 abstracts are arranged into 6 sessions: impurities and defects in commercial substrates: their sources, effects on material yield, and material quality; impurity gettering in silicon: limits and manufacturability of impurity gettering and in silicon solar cells; impurity/defect passivation; new concepts in silicon growth: improved initial quality and thin films; and silicon solar cell design opportunities.

Not Available

1994-06-01T23:59:59.000Z

194

Properties of High Efficiency CIGS Thin Film Solar Cells  

DOE Green Energy (OSTI)

We present experimental results in three areas. Solar cells with an efficiency of 19% have been fabricated with an absorber bandgap in the range of 1.1-1.2 eV. Properties of solar cells fabricated with and without an undoped ZnO layer were compared. The data show that high efficiency cells can be fabricated without using the high-resistivity or undoped ZnO layer. Properties of CIGS solar cells were fabricated from thin absorbers (1 {micro}m) deposited by the three-stage process and simultaneous co-deposition of all the elements. In both cases, solar cells with efficiencies of 16%-17% are obtained.

Ramanathan, K.; Keane, J.; Noufi, R.

2005-02-01T23:59:59.000Z

195

Thin-film absorber for a solar collector  

DOE Green Energy (OSTI)

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, W.G.

1982-02-09T23:59:59.000Z

196

Development of Solar Grade (SoG) Silicon  

DOE Green Energy (OSTI)

The rapid growth of the photovoltaics (PV) industry is threatened by the ongoing shortage of suitable solar grade (SoG) silicon. Until 2004, the PV industry relied on the off spec polysilicon from the electronics industry for feedstock. The rapid growth of PV meant that the demand for SoG silicon predictably surpassed this supply. The long-term prospects for PV are very bright as costs have come down, and efficiencies and economies of scale make PV generated electricity ever more competitive with grid electricity. However, the scalability of the current process for producing poly silicon again threatens the future. A less costly, higher volume production technique is needed to supply the long-term growth of the PV industry, and to reduce costs of PV even further. This long-term need was the motivation behind this SBIR proposal. Upgrading metallurgical grade (MG) silicon would fulfill the need for a low-cost, large-scale production. Past attempts to upgrade MG silicon have foundered/failed/had trouble reducing the low segregation coefficient elements, B, P, and Al. Most other elements in MG silicon can be purified very efficiently by directional solidification. Thus, in the Phase I program, Crystal Systems proposed a variety of techniques to reduce B, P, and Al in MG silicon to produce a low cost commercial technique for upgrading MG silicon. Of the variety of techniques tried, vacuum refining and some slagging and additions turned out to be the most promising. These were pursued in the Phase II study. By vacuum refining, the P was reduced from 14 to 0.22 ppmw and the Al was reduced from 370 ppmw to 0.065 ppmw. This process was scaled to 40 kg scale charges, and the results were expressed in terms of half-life, or time to reduce the impurity concentration in half. Best half-lives were 2 hours, typical were 4 hours. Scaling factors were developed to allow prediction of these results to larger scale melts. The vacuum refining required the development of new crucibles, as well as liners and coatings to allow the vacuum to be achieved. These developments also hold the promise of lower cost ingot growth, because several of these developments led to a reusable crucible. Liners and coatings were tested on 37 runs, under a variety of conditions. Although many of these did not fulfill the requirements of the program, several were very successful, particularly in allowing the crucible to be reused several times. The most interesting result was with slags and additives used to reduce P and Al. Although slags have been much studied with little success in removing P and B effectively, certain modeling suggested a particular type of slagging might be effective. This was tried, and found to be highly effective for P and surprisingly effective for B, as well. The best results indicate that > 99% of the P was removed, and > 75% of the B was removed by a slagging treatment. An operability issue involving separation of the slag and silicon was the final technical problem preventing the full-scale use of this technique, and there has been progress on this front. A slagging/additive technique is highly promising, because the rates of equilibration are very high, and this is a rapid technique that scales very well to large volumes with little increase in time. Materials of containment and slag/metal separation are issues that are continuing to be developed.

Joyce, David B; Schmid, Frederick

2008-01-18T23:59:59.000Z

197

Thin film solar cell including a spatially modulated intrinsic layer  

SciTech Connect

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

1989-03-28T23:59:59.000Z

198

15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers  

DOE Green Energy (OSTI)

The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

Sopori, B. L.

2005-11-01T23:59:59.000Z

199

Preparation of thin film solar cells under very low pressure conditions. Final report, October 1, 1976--September 30, 1977  

DOE Green Energy (OSTI)

In this study the feasibility of fabricating backwall Schottky barrier polycrystalline solar cells under ultra-high vacuum conditions of 1 x 10/sup -10/ torr (N/sub 2/) was investigated. Thin films of electron beam vaporized silicon were deposited on cleaned metal substrates of tungsten, tantalum and hafnium. Mass spectra from the quadrapole residual gas analyzer were used to determine the partial pressure of peak heights of 13 residual gases during each processing step. During separate silicon depositions, the substrate temperature was varied between 400 and 750/sup 0/C and deposition rates between 20 and 750 A/min were used. Surface contamination and metal diffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition and annealing. Auger depth profiling, x-ray analysis, and SEM in the topographic and channeling modes, were utilized to characterize the samples with respect to silicon-metal boundary layer, interdiffusion, silicide formation and grain size of silicon. The clean metal surface was found to enhance thin film silicide growth. Fine grain silicon films were obtained for all samples that were not completely converted to a metallic silicide. Tungsten, tantalum and hafnium were found to form silicides at temperatures as low as 600/sup 0/C.

Schmidt, F.A.; Shanks, H.R.; Bevolo, A.J.; Campisi, G.J.

1977-01-01T23:59:59.000Z

200

16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers  

DOE Green Energy (OSTI)

The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

Sopori, B. L.

2006-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Silicon materials task of the low cost solar array project (Phase III): effect of impurities and processing on silicon solar cells. Fourteenth quarterly report, January-March 1979  

DOE Green Energy (OSTI)

The objective of this program is to determine how various processes, impurities, and impurity-process interactions affect the properties of silicon and the performance of terrestrial solar cells made from silicon. The data provide a basis for cost-benefit analysis to the producers and users of Solar Grade Silicon. The Phase III effort encompasses five major topics: (1) examination of the interaction of impurities with processing treatments, (2) generation of a data base and modeling of impurity effects in n-base solar cells, (3) extension of previous p-base studies to include impurities likely to be introduced during silicon production, refining or crystal growth, (4) a consideration of the potential impact of anisotropic (nonuniform) impurity distribution in large Czochralski and ribbon solar cells and, (5) a preliminary investigation of the permanence of impurity effects in silicon solar cells. During this quarter (1) the mechanisms responsible for impurity deactivation during high temperature gettering treatments was examined in detail, (2) the sead to tang and center to edge variation in Czechralski ingot properties for commercial-size ingots doped with Ti and Mn was evaluated, and (3) aging effects in solar cells doped with Ti or Mo were assessed. Also, an analysis of impurity effects on crystal structure breakdown, and the monitoring of ingot lifetimes by photoconductive decay lifetime measurement before and after processing were continued. The highlights of this work are described. (WHK)

Hopkins, R.H.; Davis, J.R.; Blais, P.D.; Rohatgi, A.; Campbell, R.B.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

1979-04-01T23:59:59.000Z

202

Solar Cells Beyond Silicon Keld West, The Danish Polymer Centre, Ris National Laboratory, DK-4000  

E-Print Network (OSTI)

1 Solar Cells Beyond Silicon Keld West, The Danish Polymer Centre, Risø National Laboratory, DK of utilising solar energy, but this direct energy transfer does not involve the elements of focusing solar energy in a way that is economically competitive, also in regions where other energy sources

203

Dip coating process. Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project. Quarterly report No. 6, March 22, 1977--June 24, 1977  

DOE Green Energy (OSTI)

The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress was made in silicon on ceramic (SOC) solar cell performance. SOC cells having 1 cm/sup 2/ active areas demonstrated measured conversion efficiencies as high as 7.2 percent. Typical open circuit voltages (V/sub oc/) and short circuit current densities (J/sub sc/) were 0.51 volt and 20 mA/cm/sup 2/ respectively. Since the active surface of these solar cells is a highly reflective ''as-grown'' surface, one can expect improvement in J/sub sc/ after an anti-reflection (AR) coating is applied. It is significant that single-crystal comparison cells, also measured without benefit of an AR coating, had efficiencies in the 8.5 percent range with typical V/sub oc/'s and J/sub sc/'s of 0.54 volt and 23 mA/cm/sup 2/, respectively. Therefore, improvement in cell design and junction diffusion techniques should increase the efficiency of both the SOC and single-crystal cells. During this quarter the dip coating facility was inadvertently contaminated, but has since been restored to a purity level exceeding its original state. With this facility, silicon coatings were grown with a single-crystal seed attached to the substrate. Single-crystal silicon was not forthcoming, but the results were nonetheless encouraging. Several of the carbon coating types tried appear promising, including one which has high purity and can be applied uniformly by swab or airbrush.

Zook, J.D.; Heaps, J.D.; Maciolek, R.B.; Koepke, B.; Butter, C.D.; Schuldt, S.B.

1977-06-30T23:59:59.000Z

204

Identification, Characterization, and Implications of Shadow Degradation in Thin Film Solar Cells  

E-Print Network (OSTI)

that the SD is a generic reliability concern for all thin film PV technologies, however, in this paper we, USA Abstract-- We describe a comprehensive study of intrinsic reliability issue arising from partial reliability concern for thin film solar cell. Keywords ­ Thin film solar cells, voltage stress, performance

Alam, Muhammad A.

205

Degradation of ITO/silicon solar cells. Final report  

DOE Green Energy (OSTI)

The research under this contract investigated the degradation mechanisms and projected lifetime of indium tin oxide (ITO/P-silicon) solar cells. Both single and polycrystalline silicon cells were investigated. Thermal degradation of the cells was shown to proceed by the growth of an interfacial SiO/sub 2/ which resulted from oxygen diffusion through the ITO. The growth of the interfacial SiO/sub 2/ causes reduction in fill factor but not V/sub oc/ or I/sub sc/ until the degradation is severe. While thermal degradation occurs, it proceeds very slowly at 50/sup 0/C and the cell efficiency is projected to remain above 50% of its original value for 10/sup 5/ years at this temperature. Cells subjected to illuminated load testing at room temperature for 840 hours showed no reduction in output. However, some changes were noted in the dark characteristics. The mechanism causing the change is not known. Preliminary noise spectral density reliability tests were conducted but the results were inconclusive.

Wilmsen, C.W. (ed.)

1978-01-01T23:59:59.000Z

206

Development of Thin-Window Silicon Drift Detector for X-ray Spectroscopy  

Science Conference Proceedings (OSTI)

A new set of thin-window silicon drift detectors composed of an array of hexagonal shaped detectors has been designed, constructed and tested for X-ray spectroscopy. Each individual ThinWinSDD has a thin entrance window on one side and a spiral shaped hexagonal cathode around a center anode on the other side. To produce the thin entrance window a 10 keV implantation of boron through a 500 A silicon dioxide was used. The implantation was followed by an annealing at 700 C for 30 min and a reactive ion etching step to ensure the removal of silicon dioxide from the smallest feature (5 mum). An aluminum layer is coated in the same vacuum system after back-sputtering. This step involves removing the native oxide that has formed on the top of the silicon substrate and then sputtering a 1100 A thick layer of aluminum onto the X-ray entrance window. The aluminum layer must be thick enough to block visible light, but thin enough to be transparent to soft X-rays down to 280 eV. We discuss first test results that include detector leakage current measurements and the response for multiple detectors exposed to the National Synchrotron Light Source's UV beam line U3C located at Brookhaven National Laboratory for X-ray energies as low as 280 eV.

Chen, W.; Carini, G.A.; De Geronimo, G.; Fried, J.; Gaskin, J.A.; Keister, J.W.; Li, Z.; Ramsey, B.D.; Rehak, P.; Siddons, D.P.

2009-10-01T23:59:59.000Z

207

The effects of concentrated ultraviolet light on high-efficiency silicon solar cells  

DOE Green Energy (OSTI)

The importance of stability in the performance of solar cells is clearly recognized as fundamental. Some of the highest efficiency silicon solar cells demonstrated to date, such as the Point Contact solar cell and the Passivated Emitter solar cell, rely upon the passivation of cell surfaces in order to minimize recombination, which reduces cell power output. Recently, it has been shown that exposure to ultraviolet (UV) light of wavelengths present in the terrestrial solar spectrum can damage a passivating silicon-oxide interface and increase recombination. In this study, we compared the performance of Point Contact and Passivated Emitter solar cells after exposure to UV light. We also examined the effect of UV exposure on oxide-passivated silicon wafers. We found that current Passivated Emitter designs are stable at both one-sun and under concentrated sunlight. The evolution of Point Contact concentrator cell performance shows a clear trend towards more stable cells. 15 refs., 18 figs.

Ruby, D.S.; Schubert, W.K.

1991-01-01T23:59:59.000Z

208

Signet Solar Inc | Open Energy Information  

Open Energy Info (EERE)

Signet Solar Inc Jump to: navigation, search Name Signet Solar Inc Place Palo Alto, California Zip 94306 Product US-based manufacturer of amorphous silicon thin-film modules....

209

Solar Grade Silicon from Agricultural By-products  

DOE Green Energy (OSTI)

In this project, Mayaterials developed a low cost, low energy and low temperature method of purifying rice hull ash to high purity (5-6Ns) and converting it by carbothermal reduction to solar grade quality silicon (Sipv) using a self-designed and built electric arc furnace (EAF). Outside evaluation of our process by an independent engineering firm confirms that our technology greatly lowers estimated operating expenses (OPEX) to $5/kg and capital expenses (CAPEX) to $24/kg for Sipv production, which is well below best-in-class plants using a Siemens process approach (OPEX of 14/kg and CAPEX of $87/kg, respectively). The primary limiting factor in the widespread use of photovoltaic (PV) cells is the high cost of manufacturing, compared to more traditional sources to reach 6 g Sipv/watt (with averages closer to 8+g/watt). In 2008, the spot price of Sipv rose to $450/kg. While prices have since dropped to a more reasonable $25/kg; this low price level is not sustainable, meaning the longer-term price will likely return to $35/kg. The 6-8 g Si/watt implies that the Sipv used in a module will cost $0.21-0.28/watt for the best producers (45% of the cost of a traditional solar panel), a major improvement from the cost/wafer driven by the $50/kg Si costs of early 2011, but still a major hindrance in fulfilling DOE goal of lowering the cost of solar energy below $1/watt. The solar cell industry has grown by 40% yearly for the past eight years, increasing the demand for Sipv. As such, future solar silicon price spikes are expected in the next few years. Although industry has invested billions of dollars to meet this ever-increasing demand, the technology to produce Sipv remains largely unchanged requiring the energy intensive, and chlorine dependent Siemens process or variations thereof. While huge improvements have been made, current state-of-the-art industrial plant still use 65 kWh/kg of silicon purified. Our technology offers a key distinction to other technologies as it starts one step upstream from all other Sipv production efforts. Our process starts by producing high purity SiO2/C feedstocks from which Sipv can be produced in a single, chlorine free, final EAF step. Specifically, our unique technology, and the resultant SiO2/C product can serve as high purity feedstocks to existing metallurgical silicon (Simet) producers, allowing them to generate Sipv with existing US manufacturing infrastructure, reducing the overall capital and commissioning schedule. Our low energy, low CAPEX and OPEX process purifies the silica and carbon present in rice hull ash (RHA) at low temperatures (< 200C) to produce high purity (5-6 Ns) feedstock for production of Sipv using furnaces similar to those used to produce Simet. During the course of this project we partnered with Wadham Energy LP (Wadham), who burns 220k ton of rice hulls (RH)/yr generating 200 GWh of electricity/yr and >30k ton/yr RHA. The power generation step produces much more energy (42 kWh/kg of final silicon produced) than required to purify the RHA (5 kWh/kg of Sipv, compared to 65 kWh/kg noted above. Biogenic silica offers three very important foundations for producing high purity silicon. First, wastes from silica accumulating plants, such as rice, corn, many grasses, algae and grains, contain very reactive, amorphous silica from which impurities are easily removed. Second, plants take up only a limited set of, and minimal quantities of the heavy metals present in nature, meaning fewer minerals must be removed. Third, biomass combustion generates a product with intrinsic residual carbon, mixed at nanometer length scales with the SiO2. RHA is 80-90 wt% high surface area (20 m2/g), amorphous SiO2 with some simple mineral content mixed intimately with 5-15 wt% carbon. The mineral content is easily removed by low cost, acid washes using Mayaterials IP, leading to purified rice hull ash (RHAclean) at up to 6N purity. This highly reactive silica is partially extracted from RHAclean at 200 C in an environmentally benign process to adjust SiO2:C ratios to those needed in EA

Richard M. Laine

2012-08-20T23:59:59.000Z

210

Solar Grade Silicon from Agricultural By-products  

Science Conference Proceedings (OSTI)

In this project, Mayaterials developed a low cost, low energy and low temperature method of purifying rice hull ash to high purity (5-6Ns) and converting it by carbothermal reduction to solar grade quality silicon (Sipv) using a self-designed and built electric arc furnace (EAF). Outside evaluation of our process by an independent engineering firm confirms that our technology greatly lowers estimated operating expenses (OPEX) to $5/kg and capital expenses (CAPEX) to $24/kg for Sipv production, which is well below best-in-class plants using a Siemens process approach (OPEX of 14/kg and CAPEX of $87/kg, respectively). The primary limiting factor in the widespread use of photovoltaic (PV) cells is the high cost of manufacturing, compared to more traditional sources to reach 6 g Sipv/watt (with averages closer to 8+g/watt). In 2008, the spot price of Sipv rose to $450/kg. While prices have since dropped to a more reasonable $25/kg; this low price level is not sustainable, meaning the longer-term price will likely return to $35/kg. The 6-8 g Si/watt implies that the Sipv used in a module will cost $0.21-0.28/watt for the best producers (45% of the cost of a traditional solar panel), a major improvement from the cost/wafer driven by the $50/kg Si costs of early 2011, but still a major hindrance in fulfilling DOE goal of lowering the cost of solar energy below $1/watt. The solar cell industry has grown by 40% yearly for the past eight years, increasing the demand for Sipv. As such, future solar silicon price spikes are expected in the next few years. Although industry has invested billions of dollars to meet this ever-increasing demand, the technology to produce Sipv remains largely unchanged requiring the energy intensive, and chlorine dependent Siemens process or variations thereof. While huge improvements have been made, current state-of-the-art industrial plant still use 65 kWh/kg of silicon purified. Our technology offers a key distinction to other technologies as it starts one step upstream from all other Sipv production efforts. Our process starts by producing high purity SiO2/C feedstocks from which Sipv can be produced in a single, chlorine free, final EAF step. Specifically, our unique technology, and the resultant SiO2/C product can serve as high purity feedstocks to existing metallurgical silicon (Simet) producers, allowing them to generate Sipv with existing US manufacturing infrastructure, reducing the overall capital and commissioning schedule. Our low energy, low CAPEX and OPEX process purifies the silica and carbon present in rice hull ash (RHA) at low temperatures (30k ton/yr RHA. The power generation step produces much more energy (42 kWh/kg of final silicon produced) than required to purify the RHA (5 kWh/kg of Sipv, compared to 65 kWh/kg noted above. Biogenic silica offers three very important foundations for producing high purity silicon. First, wastes from silica accumulating plants, such as rice, corn, many grasses, algae and grains, contain very reactive, amorphous silica from which impurities are easily removed. Second, plants take up only a limited set of, and minimal quantities of the heavy metals present in nature, meaning fewer minerals must be removed. Third, biomass combustion generates a product with intrinsic residual carbon, mixed at nanometer length scales with the SiO2. RHA is 80-90 wt% high surface area (20 m2/g), amorphous SiO2 with some simple mineral content mixed intimately with 5-15 wt% carbon. The mineral content is easily removed by low cost, acid washes using Mayaterials IP, leading to purified rice hull ash (RHAclean) at up to 6N purity. This highly reactive silica is partially extracted from RHAclean at 200 C in an environmentally benign process to adjust SiO2:C ratios to those needed in EA

Richard M. Laine

2012-08-20T23:59:59.000Z

211

In situ measurements of stress evolution in silicon thin films during  

NLE Websites -- All DOE Office Websites (Extended Search)

In situ measurements of stress evolution in silicon thin films during In situ measurements of stress evolution in silicon thin films during electrochemical lithiation and delithiation Title In situ measurements of stress evolution in silicon thin films during electrochemical lithiation and delithiation Publication Type Journal Article Year of Publication 2010 Authors Sethuraman, Vijay A., Michael J. Chon, Maxwell Shimshak, Venkat Srinivasan, and Pradeep R. Guduru Journal Journal of Power Sources Volume 195 Start Page 5062 Issue 15 Pagination 5062-5066 Date Published 08/2010 Keywords In situ stress measurement, Lithium-ion battery, Mechanical dissipation, Multi-beam optical sensor (MOS), Open-circuit relaxation, Silicon anode Abstract We report in situ measurements of stress evolution in a silicon thin-film electrode during electrochemical lithiation and delithiation by using the multi-beam optical sensor (MOS) technique. Upon lithiation, due to substrate constraint, the silicon electrode initially undergoes elastic deformation, resulting in rapid rise of compressive stress. The electrode begins to deform plastically at a compressive stress of ca. -1.75 GPa; subsequent lithiation results in continued plastic strain, dissipating mechanical energy. Upon delithiation, the electrode first undergoes elastic straining in the opposite direction, leading to a tensile stress of ca. 1 GPa; subsequently, it deforms plastically during the rest of delithiation. The plastic flow stress evolves continuously with lithium concentration. Thus, mechanical energy is dissipated in plastic deformation during both lithiation and delithiation, and it can be calculated from the stress measurements; we show that it is comparable to the polarization loss. Upon current interruption, both the film stress and the electrode potential relax with similar time constants, suggesting that stress contributes significantly to the chemical potential of lithiated silicon.

212

The Characterization of Micro-Channel Structure Poly Silicon Solar Cell Shaped by Laser Carving Technology  

E-Print Network (OSTI)

AbstractOn the increasing efficiency of solar cell manufacturing is a continuous challenge to the photovoltaic industry. This paper discusses using laser carving to shape circular micro channels on the surface of polycrystalline silicon solar cells in order to enhance their efficiency. According to the research findings, when the radius of circular-micro channels structure for 15?m, the efficiency of the solar cell is raised from 14.28 % to 15.78%. Detail features of efficiency and IV curve are also discussed. Index Termspoly silicon, solar cell, micro channel, laser carving I.

Liann B. Chang; Hsin C. Chen; Chao S. Lai; Chung W. Liao

2009-01-01T23:59:59.000Z

213

Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cells  

E-Print Network (OSTI)

In this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline silicon. We analyze a specially prepared solar cell with alternating ...

Bertoni, Mariana I.

214

Effects of Solar Radiation on the Performance of Pyrgeometers with Silicon Domes  

Science Conference Proceedings (OSTI)

The performance of the Eppley pyrgeometer with a silicon dome presents several anomalies during daytime measurements. These problems are related mainly to the solar heating of the dome, which causes nearly instantaneous fluctuations, about 1%2% ...

L. Alados-Arboledas; J. Vida; J. I. Jimnez

1988-10-01T23:59:59.000Z

215

Preparation of Solar Grade Silicon Precursor by Electrolysis SiO2 in ...  

Science Conference Proceedings (OSTI)

Abstract Scope, Al-Si alloy, a precursor of solar grade silicon, was prepared by direct electrolysis in cryolite molten salt at 950 oC using high purity silica as...

216

Solar Thin Films Inc formerly American United Global Inc | Open Energy  

Open Energy Info (EERE)

Films Inc formerly American United Global Inc Films Inc formerly American United Global Inc Jump to: navigation, search Name Solar Thin Films Inc (formerly American United Global Inc) Place New York, New York Zip 10038 Sector Solar Product A US-based solar manufacturing equipment supplier. References Solar Thin Films Inc (formerly American United Global Inc)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Thin Films Inc (formerly American United Global Inc) is a company located in New York, New York . References ↑ "Solar Thin Films Inc (formerly American United Global Inc)" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Thin_Films_Inc_formerly_American_United_Global_Inc&oldid=351338

217

Silicon Solar Cells with Front Hetero-Contact and Aluminum Alloy Back Junction: Preprint  

DOE Green Energy (OSTI)

We prototype an alternative n-type monocrystalline silicon (c-Si) solar cell structure that utilizes an n/i-type hydrogenated amorphous silicon (a-Si:H) front hetero-contact and a back p-n junction formed by alloying aluminum (Al) with the n-type Si wafer.

Yuan, H.-C.; Page, M. R.; Iwaniczko, E.; Xu, Y.; Roybal, L.; Wang, Q.; Branz, H. M.; Meier, D. L.

2008-05-01T23:59:59.000Z

218

Tax Credits Give Thin-Film Solar a Big Boost | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Solar a Big Boost October 18, 2010 - 2:00pm Addthis MiaSol will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act...

219

Polycrystalline Thin Film Photovoltaics: From the Laboratory to Solar Fields; Preprint  

DOE Green Energy (OSTI)

We review the status of commercial polycrystalline thin-film solar cells and photovoltaic (PV) modules, including current and projected commercialization activities.

von Roedern, B.; Ullal, H. S.; Zweibel, K.

2006-05-01T23:59:59.000Z

220

Overview and Challenges of Thin Film Solar Electric Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

and Challenges of Thin and Challenges of Thin Film Solar Electric Technologies H.S. Ullal Presented at the World Renewable Energy Congress X and Exhibition 2008 Glasgow, Scotland, United Kingdom July 19-25, 2008 Conference Paper NREL/CP-520-43355 December 2008 NOTICE The submitted manuscript has been offered by an employee of the Alliance for Sustainable Energy, LLC (ASE), a contractor of the US Government under Contract No. DE-AC36-08-GO28308. Accordingly, the US Government and ASE retain a nonexclusive royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for US Government purposes. This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

PROCEEDINGS O F THE IEEE, VOL.56, NO. 1, JANUARY196837 [`I J. J. Wysocki,"Lithium-doped radiation-resistant silicon solar  

E-Print Network (OSTI)

,"Lithium-doped radiation-resistant silicon solar cells," IEEE Trans. Nuclear Science. vol.NS-13, pp. 168-173, December 1966 damagein semiconductorsXI1: Effects ofhighenergy electrons in silicon and silicon solar cells," Contract NAS 5-3805, May 25, 1966. 14] R. V. Tauke, "Thermal annealing of irradiated n-on-p silicon solar cells

Teich, Malvin C.

222

Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout  

SciTech Connect

We describe the characteristics of thin (1 {mu}m) and thick (> 30 {mu}m) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-ray, {gamma} rays and thermal neutrons. For x-ray, {gamma} ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For thermal neutron detection we use thin (2{approximately}5 {mu}m) gadolinium converters on 30 {mu}m thick a-Si:H diodes. For direct detection of minimum ionizing particles and others with high resistance to radiation damage, we use the thick p-i-n diode arrays. Diode and amorphous silicon readouts as well as polysilicon pixel amplifiers are described.

Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Wildermuth, D. (Lawrence Berkeley Lab., CA (United States)); Goodman, C. (Air Techniques Corp., Hicksville, New York (United States)); Fujieda, I. (NEC Corp., Tokyo (Japan))

1992-07-01T23:59:59.000Z

223

Exploring the parameter space of disc shaped silver nanoparticles for thin film silicon photovoltaics  

E-Print Network (OSTI)

We numerically simulate, using finite-difference time-domain, the optical properties of silver nano discs deposited on the front surface of silicon solar cells. We explore the effect of each of the parameters of such a system, in order to draw some general design rules for the subsequent fabrication of such structures.

Figeys, Bruno

2011-01-01T23:59:59.000Z

224

Dip-coating process. Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project. Quarterly report No. 7  

DOE Green Energy (OSTI)

The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. During the past quarter, significant progress was demonstrated in several areas. Seeded growth of silicon-on-ceramic (SOC) with an EFG ribbon seed was demonstrated. Different types of mullite received from Coors were successfully coated with silicon. A new method of deriving minority carrier diffusion length, L/sub n/, from spectral response measurements was evaluated. ECOMOD cost projections were found to be in good agreement with the interim SAMIS method proposed by JPL. On the less positive side, there was a decrease in cell performance which is believed to be due to an unidentified source of impurities. Also, operation of the new coating system fell behind schedule but is expected to improve in the coming quarter, since construction has now been completed.

Zook, J.D.; Heaps, J.D.; Maciolek, R.B.; Koepke, B.; Butter, C.D.; Schuldt, S.B.

1977-12-30T23:59:59.000Z

225

Silicon materials task of the low cost solar array project (Phase III). Effect of impurities and processing on silicon solar cells. Fifteenth quarterly report, April-June 1979  

DOE Green Energy (OSTI)

The overall objective of this program is to define the effects of impurities, various thermochemical processes, and any impurity-process interactions on the performance of terrestrial silicon solar cells. The results of the study form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost-benefit relationships for the use of less pure, less costly Solar Grade silicon. The first reported determinations of the segregation coefficients of tungsten, tantalum, and cobalt for the Czochralski pulling of silicon single crystals were performed. Sensitive neutron activation analysis was used to determine the metal impurity content of the silicon (C/sub S/) while atomic absorption was used to measure the metal content of the residual liquid (C/sub L/) from which the doped crystals were grown. Gettering of Ti-doped silicon wafers improves cell performance by 1 to 2% (absolute) for the highest temperatures and longest times. The measured profile for Ti centers formed after an 850/sup 0/C gettering operation was fitted by a mathematical expression for the out-diffusion of an impurity species. By means of cell performance data and the newly-measured segregation coefficients curves were computed to predict the variation in cell efficiency with impurity concentration for Mo, Ta, W, Nb, and Co, materials commonly employed in the construction of high temperature silicon processing equipment. Using data for second and third generation n-base ingots the cell performance curves were updated for single impurities in n-type silicon. Most impurities degrade n-base cells less than p-base devices. The effect is larges for Mo, Al, Mn, Ti, and V while Fe and Cr behave much the same in both types of solar cells. In contrast Ni and Cu both degrade n-base devices (apparently by a junction mechanism) more severely than p-base cells. (WHK)

Hopkins, R.H.; Davis, J.R.; Blais, P.D.; Rohatgi, A.; Campbell, R.B.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

1979-07-01T23:59:59.000Z

226

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

DOE Green Energy (OSTI)

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

227

Silicon web process development. Low Cost Solar Array Project: Large Area Silicon Test Task. Annual report, April 1978-April 1979  

DOE Green Energy (OSTI)

Silicon dendritic web is a unique mode of ribbon growth in which crystallographic and surface tension forces, rather than shaping dies, are used to control crystal form. The single crystal webs, typically 2-4 cm wide, have been made into solar cells which exhibit AMl conversion efficiencies as high as 15.5%. During crystallization, silicon webs effectively segregate metal impurities to the melt (k/sub eff/ approx. 10/sup -5/) so that the use of cheaper, less pure silicon as feedstock for crystal growth appears feasible. A research program to significantly increase web output rate and to show the feasibility for simultaneous melt replenishment and growth is described. Also, an economic analysis of the silicon web process is presented. (WHK)

Duncan, C.S.; Hopkins, R.H.; Seidensticker, R.G.; McHugh, J.P.; Hill, F.E.; Heimlich, M.E.; Driggers, J.M.

1979-01-01T23:59:59.000Z

228

Silicon materials task of the low-cost solar-array project. Effect of impurities and processing on silicon solar cells. Final report  

DOE Green Energy (OSTI)

The object of the program has been to investigate the effects of various processes, metal contaminants, and contaminant-process interactions on the properties of silicon and on the performance of terrestrial silicon solar cells. The study has encompassed topics such as thermochemical (gettering) treatments, base-doping concentration, base-doping type (n vs. p), grain boundary-impurity interaction in polycrystalline devices, and long-term effects of impurities and impurity impacts on high-efficiency cells, as well as a preliminary evaluation of some potential low-cost silicon materials. The effects have been studied of various metallic impurities, introduced singly or in combination into Czochralski, float zone, and polycrystalline silicon ingots and into silicon ribbons grown by the dendritic web process. The solar cell data indicate that impurity-induced performance loss is caused primarily by a reduction in base diffusion length. An analytical model based on this observation has been developed and verified experimentally for both n- and p-base material. Studies of polycrystalline ingots containing impurities indicate that solar cell behavior is species sensitive and that a fraction of the impurities are segregated to the grain boundaries. HCl and POCl gettering improve the performance of single-crystal solar cells containing Fe, Cr, and Ti. In contrast Mo-doped material is barely affected. The efficiencies of solar cells fabricated on impurity-doped wafers is lower when the front junction is formed by ion implantation than when conventional diffusion techniques are used. For most impurity-doped solar cells stability is expected for projected times beyond 20 years. Feedstock impurity concentrations below one part per million for elements like V, or 100 parts per million for more benign impurities like Cu or Ni, will be required.

Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Hanes, M.H.; Rai-Choudhury, P.; Mollenkopf, H.C.

1982-02-01T23:59:59.000Z

229

High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells  

E-Print Network (OSTI)

of a triple cell showing 10.7% stable efficiency. Figure 4-1 Schematic diagram of the Hot Wire CVD deposition. Task 7: High-rate deposition of a-Si based solar cells We have conducted extensive research using a hot1 High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells PHASE I Annual

Deng, Xunming

230

Solar-grade silicon by directional solidification in carbon crucibles  

Science Conference Proceedings (OSTI)

Directional solidification of silicon in carbon crucibles was achieved by using two variations of the Bridgman-Stockbarger method. One was a static technique wherein liquid silicon in a carbon crucible was positioned in a tamperature gradient of about ...

T. F. Ciszek; G. H. Schwuttke; K. H. Yang

1979-05-01T23:59:59.000Z

231

Comparison of electronic structure of as grown and solar grade silicon samples  

Science Conference Proceedings (OSTI)

A comparison of the electronic structure of two different types of silicon materials viz., (i) as grown silicon and (ii) solar silicon has been carried out utilizing maximum entropy method and pair distribution function using powder X-ray data sets. The precise electron density maps have been elucidated for the two samples. The covalent nature of the bonding between atoms in both the samples is found to be well pronounced and clearly seen from the electron density maps. The electron densities at the middle of the Si-Si bond are found to be 0.47 and 0.45 e/A{sup 3} for as grown silicon and solar silicon respectively. In this work, the local structural information has also been obtained by analyzing the atomic pair distribution functions of these two samples.

Saravanan, R., E-mail: saragow@dataone.in; Sheeba, R. A. J. R. [Madura College, Research Centre and PG Department of Physics (India)

2012-04-15T23:59:59.000Z

232

Amorphous silicon cell array powered solar tracking apparatus  

DOE Patents (OSTI)

An array of an even number of amorphous silicon solar cells are serially connected between first and second terminals of opposite polarity. The terminals are connected to one input terminal of a DC motor whose other input terminal is connected to the mid-cell of the serial array. Vane elements are adjacent the end cells to selectively shadow one or the other of the end cells when the array is oriented from a desired attitude relative to the sun. The shadowing of one cell of a group of cells on one side of the mid-cell reduces the power of that group substantially so that full power from the group of cells on the other side of the mid-cell drives the motor to reorient the array to the desired attitude. The cell groups each have a full power output at the power rating of the motor. When the array is at the desired attitude the power output of the two groups of cells balances due to their opposite polarity so that the motor remains unpowered.

Hanak, Joseph J. (Lawrenceville, NJ)

1985-01-01T23:59:59.000Z

233

STRC's Process for Producing Low Cost Solar Silicon  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, 2011 TMS Annual Meeting & Exhibition. Symposium , Silicon Production, Purification and Recycling for Photovoltaic Cells.

234

QQ3, Etched Silicon Pillar Array Solar Cells  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, 2009 Electronic Materials Conference. Symposium, Electronic Materials Conference. Presentation Title, QQ3, Etched Silicon Pillar...

235

Solar silicon definition. Progress report, 15 October 1974--15 September 1975  

DOE Green Energy (OSTI)

This project was conducted to determine the optimum silicon quality for cost-effective solar cells suitable for large-scale terrestrial utilization. The effects of selected impurities upon the solar cell performance were investigated by preparation and characterization of a matrix of silicon samples. Evaluation of the I-V curves to obtain the slope of the forward current of simple p-n junctions provided rapid material evaluation. Experimental techniques were demonstrated for achieving reliable data from diodes and solar cells. The primary electrical parameters measured were I-V characteristics. (auth)

Wakefield, G.F.; Brown, G.A.; Chu, T.L.; Harrap, V.

1975-09-01T23:59:59.000Z

236

Lattice-Matched GaNPAs-On-Silicon Tandem Solar Cells  

DOE Green Energy (OSTI)

A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated a monolithic III-V-on-silicon tandem solar cell in which most of the III-V layers are nearly lattice-matched to the silicon substrate. The cell includes a 1.8 eV GaNPAs top cell, a GaP-based tunnel junction (TJ), and a diffused silicon junction formed during the epitaxial growth of GaNP on the silicon substrate. This tandem on silicon has a Voc of 1.53 V and an AM1.5G efficiency of 5.2% without any antireflection coating. Low currents in the top cell are the primary limitation to higher efficiency at this point.

Geisz, J. F.; Olson, J. M.; Friedman, D. J.; Jones, K. M.; Reedy, R. C.; Romero, M. J.

2005-02-01T23:59:59.000Z

237

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Program Manager, Solar Program Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be using technology pioneered at the Department of Energy's National Renewable Energy Lab (NREL). The record-breaking Cadmium-Telluride (CdTe) thin film photovoltaic technology GE has chosen for its solar panels was originally developed more than a decade ago by a team of scientists led by NREL's Xuanzhi Wu, and

238

Analysis of copper-rich precipitates in silicon: chemical state,gettering, and impact on multicrystalline silicon solar cellmaterial  

DOE Green Energy (OSTI)

In this study, synchrotron-based x-ray absorption microspectroscopy (mu-XAS) is applied to identifying the chemical states of copper-rich clusters within a variety of silicon materials, including as-grown cast multicrystalline silicon solar cell material with high oxygen concentration and other silicon materials with varying degrees of oxygen concentration and copper contamination pathways. In all samples, copper silicide (Cu3Si) is the only phase of copper identified. It is noted from thermodynamic considerations that unlike certain metal species, copper tends to form a silicide and not an oxidized compound because of the strong silicon-oxygen bonding energy; consequently the likelihood of encountering an oxidized copper particle in silicon is small, in agreement with experimental data. In light of these results, the effectiveness of aluminum gettering for the removal of copper from bulk silicon is quantified via x-ray fluorescence microscopy (mu-XRF),and a segregation coefficient is determined from experimental data to beat least (1-2)'103. Additionally, mu-XAS data directly demonstrates that the segregation mechanism of Cu in Al is the higher solubility of Cu in the liquid phase. In light of these results, possible limitations for the complete removal of Cu from bulk mc-Si are discussed.

Buonassisi, Tonio; Marcus, Matthew A.; Istratov, Andrei A.; Heuer, Matthias; Ciszek, Theodore F.; Lai, Barry; Cai, Zhonghou; Weber,Eicke R.

2004-11-08T23:59:59.000Z

239

Physical Properties of HWCVD Microcrystalline Silicon Thin Films: Preprint  

DOE Green Energy (OSTI)

This conference paper describes Microcrystalline silicon films were grown with different thicknesses and different hydrogen dilution ratios on glass and Si substrates. Some films were deposited with a seed layer, whereas others were deposited directly on the substrate. We used atomic force microscopy, scanning electron microscopy, and X-ray diffraction to study the morphology and crystalline structure of the samples. We did not find a significant influence of the different substrates on the morphology or crystalline structure. The presence of the seed layer enhanced the crystallization process, decreasing the amount of amorphous layer present in the films. The microstructure of most films was formed by grains, with a subgrain structure. Films grown with low values of dilution ratio had (220) texture and elongated grains, whereas films deposited with high values of dilution ratio were randomly oriented and had an irregular shape.

Moutinho, H. R.; Romero, M. J.; Jiang, C. S.; Xu, Y.; Nelson, B. P.; Jones, K. M.; Mahan, A. H.; Al-Jassim, M. M.

2002-05-01T23:59:59.000Z

240

Thin film transistors and solar cells. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search  

Science Conference Proceedings (OSTI)

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 250 citations and includes a subject term index and title list.)

NONE

1995-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Thin film transistors and solar cells. (Latest citations from the US Patent Bibliographic File with Exemplary Claims). Published Search  

SciTech Connect

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 250 citations and includes a subject term index and title list.)

Not Available

1993-11-01T23:59:59.000Z

242

Method of fabrication of display pixels driven by silicon thin film transistors  

DOE Patents (OSTI)

Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200.degree. C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA)

1999-01-01T23:59:59.000Z

243

Rapid Deposition Technology Holds the Key for the World's Largest Manufacturer of Thin-Film Solar Modules (Fact Sheet)  

Science Conference Proceedings (OSTI)

First Solar, Inc. has been collaborating with NREL since 1991, advancing its thin-film cadmium telluride solar technology to grow from a startup company to become one of the world's largest manufacturers of solar modules, and the world's largest manufacturer of thin-film solar modules.

Not Available

2013-08-01T23:59:59.000Z

244

Fundamental understanding and development of low-cost, high-efficiency silicon solar cells  

DOE Green Energy (OSTI)

The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

ROHATGI,A.; NARASIMHA,S.; MOSCHER,J.; EBONG,A.; KAMRA,S.; KRYGOWSKI,T.; DOSHI,P.; RISTOW,A.; YELUNDUR,V.; RUBY,DOUGLAS S.

2000-05-01T23:59:59.000Z

245

Selective Formation of Size-Controlled Silicon Nanocrystals by Photosynthesis in SiO Nanoparticle Thin Film  

Science Conference Proceedings (OSTI)

The SiOx thin film with a thickness of about 1 mum was formed on a GaAs substrate by bar-coating with the organic solution of the SiOx nanoparticles (~40 nm). The as-formed SiOx thin film consists of the SiOx ... Keywords: ${hbox{SiO}}_{x}$ , Nanocrystal, Raman, photosynthesis, self- limiting, silicon

Changyong Chen; S. Kimura; S. Nozaki; H. Ono; K. Uchida

2006-11-01T23:59:59.000Z

246

Coaxial silicon nanowires as solar cells and nanoelectronic power sources  

E-Print Network (OSTI)

(EERE) Fuel Cell Technologies Program (FCT) Solar Thermochemical Hydrogen Production R&D portfolioSANDIA REPORT SAND2011-3622 Unlimited Release Printed May 2011 Solar Thermochemical Hydrogen://www.ntis.gov/help/ordermethods.asp?loc=7-4-0#online #12;3 SAND2011-3622 Unlimited Release Printed May 2011 Solar Thermochemical Hydrogen

Marcus, Charles

247

Silicon Materials Task of the Low Cost Solar Array Project (Phase II). Effect of impurities and processing on silicon solar cells. Phase II. Summary and eleventh quarterly report  

DOE Green Energy (OSTI)

The effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells were investigated. A variety of aspects including thermal treatments, crystal growth rate, base doping concentration (low resistivity), base doping type (n vs. p), grain boundary structure, and carbon/oxygen-metal interactions (float zone vs Czochralski growth) were studied. The effects of various metallic impurities were studied, introduced singly or in combination into Czochralski, float zone and polycrystalline silicon ingots and into silicon ribbons grown by the dendritic web process. The totality of the solar cell data (comprising over 4000 cells) indicate that impurity-induced performance loss is primarily due to reduction in base diffusion length. Based on this assumption an analytical model has been developed which predicts cell performance as a function of metal impurity content. The model has now been verified for p-base material by correlating the projected and measured performance of solar cells made on 19 ingots bearing multiple impurities.

Hopkins, R.H.; Davis, J.R.; Blais, P.D.; Rohatgi, A.; Rai-Choudhury, P.; Hanes, M.H.; McCormick, J.R.

1978-07-01T23:59:59.000Z

248

Proof of damage-free selective removal of thin dielectric coatings on silicon wafers by irradiation with femtosecond laser pulses  

Science Conference Proceedings (OSTI)

The microstructural impact of selective femtosecond laser ablation of thin dielectric layers from monocrystalline silicon wafers was investigated. Various spots opened by 280 fs laser pulses at {lambda} = 1.03 {mu}m wavelength and 50 fs pulses at 800 nm, respectively, were analyzed in detail using Raman and transmission electron microscopy. The results show clearly that the thin dielectric films can be removed without any detectable modification of the Si crystal structure in the opened area. In contrast, in adjacent regions corresponding to laser fluence slightly below the breaking threshold, a thin layer of amorphous silicon with a maximum thickness of about 50 nm is found at the Si/SiO{sub 2} interface after laser irradiation. More than one pulse on the same position, however, causes structural modification of the silicon after thin film ablation in any case.

Rublack, Tino; Muchow, Markus [Zentrum fuer Innovationskompetenz SiLi-nano, Martin-Luther-Universitaet Halle-Wittenberg, 06120 Halle (Germany); Schade, Martin; Leipner, Hartmut S. [Interdisziplinaeres Zentrum fuer Materialwissenschaften, Martin-Luther-Universitaet Halle-Wittenberg, 06099 Halle (Germany); Seifert, Gerhard [Zentrum fuer Innovationskompetenz SiLi-nano, Martin-Luther-Universitaet Halle-Wittenberg, 06120 Halle (Germany); Fraunhofer-Center for Silicon Photovoltaics CSP, 06120 Halle (Germany)

2012-07-15T23:59:59.000Z

249

PV Crystalox Solar AG formerly PV Silicon AG | Open Energy Information  

Open Energy Info (EERE)

PV Crystalox Solar AG formerly PV Silicon AG PV Crystalox Solar AG formerly PV Silicon AG Jump to: navigation, search Name PV Crystalox Solar AG (formerly PV Silicon AG) Place Abingdon, England, United Kingdom Zip OX14 4SE Sector Solar Product UK-based manufacturer of multicrystalline ingots and wafers to the solar industry; as of early 2009, to output solar-grade polysilicon. Coordinates 36.71049°, -81.975194° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":36.71049,"lon":-81.975194,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

250

Metal catalyst technique for texturing silicon solar cells ...  

Building Energy Efficiency; Electricity Transmission; ... and another in which the walls of the reaction chamber are pre-conditioned with a thin coati ...

251

High-Cycle Fatigue of Single-Crystal Silicon Thin Films  

E-Print Network (OSTI)

When subjected to alternating stresses, most materials degrade, e.g., suffer premature failure, due to a phenomenon known as fatigue. It is generally accepted that in brittle materials, such as ceramics, fatigue can only take place in toughened solids, i.e., premature fatigue failure would not be expected in materials such as single crystal silicon. The results of this study, however, appear to be at odds with the current understanding of brittle material fatigue. Twelve thin-film ( 20 m thick) single crystal silicon specimens were tested to failure in a controlled air environment (30 0.1 C, 50 2% relative humidity). Damage accumulation and failure of the notched cantilever beams were monitored electrically during the "fatigue life" test. Specimen lives ranged from about 10 s to 48 days, or 1 10 6 to 1 10 11 cycles before failure over stress amplitudes ranging from approximately 4 to 10 GPa. A variety of mechanisms are discussed in light of the fatigue life data and fracture surface evaluation. [642] Index Terms---Fatigue failure, MEMS devices, single-crystal silicon, thin films.

Christopher L. Muhlstein; Stuart B. Brown; Robert O. Ritchie

2001-01-01T23:59:59.000Z

252

Technological assessment of light-trapping technology for thin-film Si solar cell  

E-Print Network (OSTI)

The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was analyzed from the technology, market, and ...

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

253

Earth abundant materials for high efficiency heterojunction thin film solar cells  

E-Print Network (OSTI)

We investigate earth abundant materials for thin-film solar cells that can meet tens of terawatts level deployment potential. Candidate materials are identified by combinatorial search, large-scale electronic structure ...

Buonassisi, Tonio

254

Optimization of interdigitated back contact silicon heterojunction solar cells by two-dimensional numerical simulation  

DOE Green Energy (OSTI)

In this paper, two-dimensional (2D) simulation of interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells is presented using Sentaurus Device, a software package of Synopsys TCAD. A model is established incorporating a distribution of trap states of amorphous-silicon material and thermionic emission across the amorphous-silicon / crystalline-silicon heterointerface. The 2D nature of IBC-SHJ device is evaluated and current density-voltage (J-V) curves are generated. Optimization of IBC-SHJ solar cells is then discussed through simulation. It is shown that the open circuit voltage (VOC) and short circuit current density (JSC) of IBC-SHJ solar cells increase with decreasing front surface recombination velocity. The JSC improves further with the increase of relative coverage of p-type emitter contacts, which is explained by the simulated and measured position dependent laser beam induced current (LBIC) line scan. The S-shaped J-V curves with low fill factor (FF) observed in experiments are also simulated, and three methods to improve FF by modifying the intrinsic a-Si buffer layer are suggested: (i) decreased thickness, (ii) increased conductivity, and (iii) reduced band gap. With all these optimizations, an efficiency of 26% for IBC-SHJ solar cells is potentially achievable.

Lu, Meijun; Das, Ujjwal; Bowden, Stuart; Hegedus, Steven; Birmire, Robert

2009-06-09T23:59:59.000Z

255

Low Cost, High Efficiency Tandem Silicon Solar Cells and LEDs  

Wladek Walukiewicz, Joel Ager, and Kin Man Yu of Berkeley Lab have developed high-efficiency solar cells that leverage the well-established design and ...

256

High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005  

DOE Green Energy (OSTI)

The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

Guha, S.; Yang, J.

2005-10-01T23:59:59.000Z

257

Fabrication of large-area ultra-thin single crystal silicon membranes  

SciTech Connect

Perfectly, crystalline, 55 nm thick silicon membranes have been fabricated over several square millimeters and used to observe transmission ion channeling patterns showing the early evolution of the axially channeled beam angular distribution for small tilts away from the [011] axis. The reduced multiple scattering through such thin layers allows fine angular structure produced by the highly non-equilibrium transverse momentum distribution of the channeled beam during its initial propagation in the crystal to be resolved. The membrane crystallinity and flatness were measured by using proton channeling measurements and the surface roughness of 0.4 nm using atomic force microscopy.

Dang, Z. Y.; Motapothula, M.; Ow, Y. S. [Center for Ion Beam Applications, Physics Department, National University of Singapore, Lower Kent Ridge Road, Singapore 117542 (Singapore); Venkatesan, T. [NanoCore, National University of Singapore, Singapore 117576 (Singapore); Breese, M. B. H. [Center for Ion Beam Applications, Physics Department, National University of Singapore, Lower Kent Ridge Road, Singapore 117542 (Singapore); Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore 117603 (Singapore); Rana, M. A. [Physics Division, Directorate of Science, PINSTECH, P.O. Nilore, Islamabad (Pakistan); Osman, A. [National Centre for Physics (NCP), Shahdara Valley Road, Islamabad (Pakistan)

2011-11-28T23:59:59.000Z

258

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network (OSTI)

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells thin film work. The most pressing current need is to determine how to extend cell life, particularly

Paris-Sud XI, Université de

259

Silicon Materials Task of the Low Cost Solar Array Project (Phase II). Effect of impurities and processing on silicon solar cells. Tenth quarterly report, 1 January 1978--31 March 1978  

DOE Green Energy (OSTI)

The objective of this program is to determine how various processes, impurities and impurity-process interactions affect the properties of silicon and the performance of terrestrial solar cells made from silicon. The development of this data base permits the definition of the tolerable impurity levels in a low-cost solar grade silicon and identifies processes which mitigate or enhance impurity effects in silicon. The data further provide the silicon manufacturer with a means to select materials of construction which minimize product contamination and permit the cost effective selection of chemical processes for silicon purification. For the silicon ingot, sheet or ribbon manufacturer the data suggest what silicon feedstock purity must be selected to produce wafers suitable for cell production and what furnace materials minimize wafer contamination. The cell manufacturer may use the data to define an acceptable wafer purity for cell processing or to identify processes which minimize impurity impact on efficiency. In short the data provide a basis for cost-benefit analysis to the producers and users of Solar Grade Silicon. During this quarter the focus of the experimental activity has been in the following four areas: (1) effects of crystal growth rate and thermal processing of silicon on impurity distribution and electrical activity, (2) impurity-grain boundary interactions in polycrystalline silicon, (3) preliminary measurements of impurity trap levels, trap concentrations and capture cross sections by Deep Level Transient Spectroscopy of purposely contaminated solar cells and (4) improvement of the solar cell-impurity concentration data base for n- and p-type silicon for subsequent modeling studies.

Hopkins, R.H.; Davis, J.R.; Blais, P.D.; Rohatgi, A.; Rai-Choudhury, P.; Hanes, M.H.; McCormick, J.R.

1978-01-01T23:59:59.000Z

260

p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells  

E-Print Network (OSTI)

everything accelerates. ARCO solar produces more than 1 MW PV cells in `80, being the first in the world, the Million Solar Roofs in the US, and many more. Besides these programs, the efficiency of CdTe thin film PV energy source is the photovoltaic (PV) cell, which converts sunlight to electrical current, without any

Bieber, Michael

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

In-Line Crack and Stress Detection in Silicon Solar Cells Using Resonance Ultrasonic Vibrations  

SciTech Connect

Statement of Problem and Objectives. Wafer breakage in automated solar cell production lines is identified as a major technical problem and a barrier for further cost reduction of silicon solar module manufacturing. To the best of our knowledge, there are no commercial systems addressing critical needs for in-line inspection of the mechanical quality of solar wafers and cells. The principal objective of the SBIR program is to validate through experiments and computer modeling the applicability of the Resonance Ultrasonic Vibrations system, which ultimately can be used as a real-time in-line manufacturing quality control tool for fast detection of mechanically unstable silicon solar cells caused by cracks. The specific objective of Phase II is to move the technology of in-line crack detection from the laboratory level to commercial demonstration through development of a system prototype. The fragility of silicon wafers possessing low mechanical strength is attributed to peripheral and bulk millimeter-length cracks. The research program is based on feasibility results obtained during Phase I, which established that: (i) the Resonance Ultrasonic Vibrations method is applicable to as-cut, processed wafers and finished cells; (ii) the method sensitivity depends on the specific processing step; it is highest in as-cut wafers and lowest in wafers with metallization pattern and grid contacts; (iii) the system is capable of matching the 2.0 seconds per wafer throughput rate of state-of-art solar cell production lines; (iv) finite element modeling provides vibration mode analysis along with peak shift versus crack length and crack location dependence; (v) a high 91% crack rejection rate was confirmed through experimentation and statistical analysis. The Phase II project has the following specific tasks: (i) specify optimal configurations of the in-line system?¢????s component hardware and software; (ii) develop and justify a system prototype that meets major specifications for an in-line crack detection unit, such as high throughput rate, high level of stability, reproducibility of data acquisition and analysis, and high sensitivity with respect to crack length and crack location; (iii) design a system platform that allows easy integration within and adaptation to various solar cell belt-type production lines; (iv) develop a testing protocol providing quality certification of the production-grade system. Commercial Application of the proposed activity consists of bringing to the solar market a new high-tech product based on an innovative solution and patented methodology to contribute to cost reduction of silicon solar module production. The solar industry, with crystalline silicon as a dominant segment, shows outstanding performance, with approximately 25% yearly growth during the last years. Despite a slowdown with only 5.6 GW installations in 2009, solar module production for the 2010 and 2011 years was recovered. According to European Photonics Industry Consortium new solar PV installations grow by 56% compared to 2010 reached 64.7 GW in 2011. Revenues in the PV industry reached a record high of $93 billion in 2011, a 13.4 percent gain over 2010 â?? and 150 percent over 2009. This growth was forecasted to continue in 2013 with double digits growth. The solar industry is economically driven to make solar panels of the highest conversion efficiency and reliability at the lowest production cost. The Resonance Ultrasonic Vibration system addresses critical needs of the silicon-based solar industry by providing a quality control method and tool, which will improve productivity, increase reliability of products and reduce manufacturing cost of solar panels.

Ostapenko, Sergei

2013-04-03T23:59:59.000Z

262

Silicon-on ceramic process: silicon sheet growth and device development for the large-area silicon sheet task of the Low-Cost Solar Array Project. Quarterly report NO. 15, April 1, 1980-June 30, 1980  

DOE Green Energy (OSTI)

The objective of this research is to investigate the technical feasibility of producing solar-cell-quality sheet silicon which could meet the DOE cost goals. The Honeywell approach is to coat one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Results and accomplishments which occurred during the quarter can be summarized as follows: (1) two major problems associated with SCIM-coating wide (10-cm) substrates were identified and solved; (2) the longitudinal temperature profile in SCIM-II has been improved to prevent substrate warping, buckling, and cracking; (3) the transverse temperature profile in SCIM II has been improved to produce more uniform coatings; (4) a strategy to eliminate effects of thermal stress has been developed; (5) the best SOC cell has a total-area conversion efficiency of 10.5% (AM1, AR), for a cell area of 5 cm/sup 2/; (6) a number of experiments are being investigated for improving cell efficiency; (7) for the slow-cooldown experiment, the average efficiency of 29 AR-coated cells was 9.9%, with a standard deviation of 0.3%; (8) encouraging results were obtained on SOC material that had been treated in a hydrogen plasma at Sandia; and (9) thermal modeling has proven to be beneficial in designing modifications of SCIM II.

Whitehead, A B; Zook, J D; Grung, B L; McHenry, K; Schuldt, S B; Chapman, P W

1980-07-31T23:59:59.000Z

263

NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)  

Science Conference Proceedings (OSTI)

Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

Not Available

2012-09-01T23:59:59.000Z

264

14th Workshop on Crystalline Silicon Solar Cells& Modules: Materials and Processes; Summary of Discussion Sessions  

DOE Green Energy (OSTI)

The 14th Workshop discussion sessions addressed funding needs for Si research and for R&D to enhance U.S. PV manufacturing. The wrap-up session specifically addressed topics for the new university silicon program. The theme of the workshop, Crystalline Silicon Solar Cells: Leapfrogging the Barriers, was selected to reflect the astounding progress in Si PV technology during last three decades, despite a host of barriers and bottlenecks. A combination of oral, poster, and discussion sessions addressed recent advances in crystal growth technology, new cell structures and doping methods, silicon feedstock issues, hydrogen passivation and fire through metallization, and module issues/reliability. The following oral/discussion sessions were conducted: (1) Technology Update; (2) Defects and Impurities in Si/Discussion; (3) Rump Session; (4) Module Issues and Reliability/Discussion; (5) Silicon Feedstock/Discussion; (6) Novel Doping, Cells, and Hetero-Structure Designs/Discussion; (7) Metallization/Silicon Nitride Processing/Discussion; (8) Hydrogen Passivation/Discussion; (9) Characterization/Discussion; and (10) Wrap-Up. This year's workshop lasted three and a half days and, for the first time, included a session on Si modules. A rump session was held on the evening of August 8, which addressed efficiency expectations and challenges of c Si solar cells/modules. Richard King of DOE and Daren Dance of Wright Williams& Kelly (formerly of Sematech) spoke at two of the luncheon sessions. Eleven students received Graduate Student Awards from funds contributed by the PV industry.

Sopori, B.; Tan, T.; Sinton, R.; Swanson, D.

2004-10-01T23:59:59.000Z

265

Epitaxial Crystal Silicon Absorber Layers and Solar Cells Grown at 1.8 Microns per Minute: Preprint  

DOE Green Energy (OSTI)

We have grown device-quality epitaxial silicon thin films at growth rates up to 1.8 ?m/min, using hot-wire chemical vapor deposition from silane at substrate temperatures below 750 degrees C. At these rates, which are more than 30 times faster than those used by the amorphous and nanocrystalline Si industry, capital costs for large-scale solar cell production would be dramatically reduced, even for cell absorber layers up to 10 ?m thick. We achieved high growth rates by optimizing the three key parameters: silane flow, depletion, and filament geometry, based on our model developed earlier. Hydrogen coverage of the filament surface likely limits silane decomposition and growth rate at high system pressures. No considerable deterioration in PV device performance is observed when grown at high rate, provided that the epitaxial growth is initiated at low rate. A simple mesa device structure (wafer/epi Si/a-Si(i)/a-Si:H(p)/ITO) with a 2.3 um epitaxial silicon absorber layer was grown at 700 nm/min. The finished device had an open-circuit voltage of 0.424 V without hydrogenation treatment.

Bobela, D. C.; Teplin, C. W.; Young, D. L.; Branz, H. M.; Stradins, P.

2011-07-01T23:59:59.000Z

266

Solar Plus SA | Open Energy Information  

Open Energy Info (EERE)

to set up a 5.5MWyear thin-film silicon module factory in Aveiro, Portugal, using EPV Solar equipment, and plans to design, market and install the products in various small...

267

Tax Credits Give Thin-Film Solar a Big Boost | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Tax Credits Give Thin-Film Solar a Big Boost Tax Credits Give Thin-Film Solar a Big Boost Tax Credits Give Thin-Film Solar a Big Boost October 18, 2010 - 2:00pm Addthis MiaSolé will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.| Photo courtesy of MiaSolé MiaSolé will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.| Photo courtesy of MiaSolé Lorelei Laird Writer, Energy Empowers What are the key facts? MiaSolé adding more than ten times its current manufacturing capacity Company expects to double or triple its workforce with expansion Expansion is funded by $101 million in Recovery Act tax credit For MiaSolé, a relative newcomer to the solar energy market, 2010 has been

268

Enhanced Efficiency of Light-Trapping Nanoantenna Arrays for Thin Film Solar Cells  

E-Print Network (OSTI)

We suggest a novel concept of efficient light-trapping structures for thin-film solar cells based on arrays of planar nanoantennas operating far from plasmonic resonances. The operation principle of our structures relies on the excitation of chessboard-like collective modes of the nanoantenna arrays with the field localized between the neighboring metal elements. We demonstrated theoretically substantial enhancement of solar-cell short-circuit current by the designed light-trapping structure in the whole spectrum range of the solar-cell operation compared to conventional structures employing anti-reflecting coating. Our approach provides a general background for a design of different types of efficient broadband light-trapping structures for thin-film solar-cell technologically compatible with large-area thin-film fabrication techniques.

Simovski, Constantin R; Voroshilov, Pavel M; Guzhva, Michael E; Belov, Pavel A; Kivshar, Yuri S

2013-01-01T23:59:59.000Z

269

Interactions between radical growth precursors on plasma-deposited silicon thin-film surfaces  

SciTech Connect

We present a detailed analysis of the interactions between growth precursors, SiH{sub 3} radicals, on surfaces of silicon thin films. The analysis is based on a synergistic combination of density functional theory calculations on the hydrogen-terminated Si(001)-(2x1) surface and molecular-dynamics (MD) simulations of film growth on surfaces of MD-generated hydrogenated amorphous silicon (a-Si:H) thin films. In particular, the authors find that two interacting growth precursors may either form disilane (Si{sub 2}H{sub 6}) and desorb from the surface, or disproportionate, resulting in the formation of a surface dihydride (adsorbed SiH{sub 2} species) and gas-phase silane (SiH{sub 4}). The reaction barrier for disilane formation is found to be strongly dependent on the local chemical environment on the silicon surface and reduces (or vanishes) if one/both of the interacting precursors is/are in a ''fast diffusing state,'' i.e., attached to fivefold coordinated surface Si atoms. Finally, activation energy barriers in excess of 1 eV are obtained for two chemisorbed (i.e., bonded to a fourfold coordinated surface Si atom) SiH{sub 3} radicals. Activation energy barriers for disproportionation follow the same tendency, though, in most cases, higher barriers are obtained compared to disilane formation reactions starting from the same initial configuration. MD simulations confirm that disilane formation and disproportionation reactions also occur on a-Si:H growth surfaces, preferentially in configurations where at least one of the SiH{sub 3} radicals is in a ''diffusive state.'' Our results are in agreement with experimental observations and results of plasma process simulators showing that the primary source for disilane in low-power plasmas may be the substrate surface.

Bakos, Tamas; Valipa, Mayur S.; Maroudas, Dimitrios [Department of Chemical Engineering, University of Massachusetts, Amherst, Massachusetts 01003-3110 (United States)

2007-03-21T23:59:59.000Z

270

Development of high-efficiency silicon solar cells and modeling the impact of system parameters on levelized cost of electricity .  

E-Print Network (OSTI)

??The objective of this thesis is to develop low-cost high-efficiency crystalline silicon solar cells which are at the right intersection of cost and performance to (more)

Kang, Moon Hee

2013-01-01T23:59:59.000Z

271

Simulated Co-Optimization of Crystalline Silicon Solar Cell Throughput and Efficiency Using Continuously Ramping Phosphorus Diffusion Profiles  

E-Print Network (OSTI)

Defect engineering is essential for the production of high-performance silicon photovoltaic (PV) devices with cost-effective solar-grade Si input materials. Phosphorus diffusion gettering (PDG) can mitigate the detrimental ...

Morishige, Ashley Elizabeth

272

Thin film transistors and solar cells. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search  

SciTech Connect

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

NONE

1996-04-01T23:59:59.000Z

273

Development of recrystallization and thin-film solar cell processes. Final report, October 1, 1977-September 30, 1978  

DOE Green Energy (OSTI)

The program had two thrusts: (1) based upon electron-beam thermal treatment of deposited silicon films, to increase crystallite sizes to the range thought to be useful for polycrystalline, thin-film cell fabrication; and (2) to explore the feasibility of applying the directed-energy technologies of ion implantation and pulsed electron beam activation, previously developed for silicon cell fabrication, to junction formation in III-V compounds. The culmination of the recrystallization effort was demonstrating grains broader than the 30-..mu..m film in which they were regrown. This proof of principle was accomplished by means of two-step thermal process that consisted of large-area pulsed electron beam melting followed by small-area heating in a moving DC electron beam. The pulsed beam treatment reduced the three-dimensional disorder of the initial submicrometer crystallite silicon film to one characterized by submicrometercross-section, full-film-thickness, columnar crystallites. The swept beam treatment allowed coalesence of these columnar crystallites, through directional freezing, in the melt path of the beam. It is believed that this demonstration is the first evidence of greater-than-film thickness recrystallization of useful thickness silicon films other than by extended heat treatment at greater than 1350/sup 0/C. The results of the studies on junction formation in III-V materials, while not so dramatic, have shown that low-energy ion implantation is a potentially viable alternative to liquid or vapor phase epitaxy in the fabrication of GaAs solar cells. Further, the technical feasibility of pulsed electron beam activation of ion implanted junctions in GaAs has been demonstrated. Lastly, the concept of forming front-layer windows of GaP and AlGaAs on GaAs by high-dose ion implantation has been shown to be technically feasible.

Solomon, S.J.

1979-05-01T23:59:59.000Z

274

Low-Cost Silicon Solar Array Project quarterly report-2, July 1976--September 1976  

DOE Green Energy (OSTI)

The potential for future widespread use of photovoltaic systems for the generation of electric power was the motivation for the establishment, in January 1975, of the Photovoltaic Conversion Program by ERDA's Division of Solar Energy. The Program's activities are planned to develop and to promote the use of photovoltaic systems to such an extent that the private sector will produce and utilize cost-competitive photovoltaic systems. As part of the ERDA Program, the Low-Cost Silicon Solar Array Project (LCSSAP) was established in January 1975. The project objective is to develop the national capability to produce low-cost, long-life photovoltaic arrays at a rate greater than 500 megawatts per year and a price of less than $500 per kilowatt peak by 1986. The array performance objectives include an efficiency greater than 10% and an operating lifetime in excess of 20 years. The approach is to reduce the cost of solar cell arrays by improving solar array manufacturing technology and by increasing solar array production capacity and quantity. Forty-three contracts have been awarded to date, to industrial firms and university and independent laboratories for experimental work, process development and analysis, technology assessment, and the production of solar-array modules. Approximately 42 kW of state-of-the-art modules have been delivered; contracts have been issued and design development has begun for 130 kW of moderately advanced modules. Efforts of the LCSSA Project are organized into an Analysis and Integration Task, four Technology Development Tasks--covering the areas of Silicon Material, Large Area Silicon Sheet, Encapsulation, and Automated Array Assembly--and a Large Scale Procurement Task, an Engineering Task, and an Operations Task. Research findings are discussed, and project planning is outlined.

Not Available

1976-01-01T23:59:59.000Z

275

Low-Cost Silicon Solar Array Project quarterly report-2, July 1976--September 1976  

SciTech Connect

The potential for future widespread use of photovoltaic systems for the generation of electric power was the motivation for the establishment, in January 1975, of the Photovoltaic Conversion Program by ERDA's Division of Solar Energy. The Program's activities are planned to develop and to promote the use of photovoltaic systems to such an extent that the private sector will produce and utilize cost-competitive photovoltaic systems. As part of the ERDA Program, the Low-Cost Silicon Solar Array Project (LCSSAP) was established in January 1975. The project objective is to develop the national capability to produce low-cost, long-life photovoltaic arrays at a rate greater than 500 megawatts per year and a price of less than $500 per kilowatt peak by 1986. The array performance objectives include an efficiency greater than 10% and an operating lifetime in excess of 20 years. The approach is to reduce the cost of solar cell arrays by improving solar array manufacturing technology and by increasing solar array production capacity and quantity. Forty-three contracts have been awarded to date, to industrial firms and university and independent laboratories for experimental work, process development and analysis, technology assessment, and the production of solar-array modules. Approximately 42 kW of state-of-the-art modules have been delivered; contracts have been issued and design development has begun for 130 kW of moderately advanced modules. Efforts of the LCSSA Project are organized into an Analysis and Integration Task, four Technology Development Tasks--covering the areas of Silicon Material, Large Area Silicon Sheet, Encapsulation, and Automated Array Assembly--and a Large Scale Procurement Task, an Engineering Task, and an Operations Task. Research findings are discussed, and project planning is outlined.

1976-01-01T23:59:59.000Z

276

Release of impurities from structural defects in polycrystalline silicon solar cells  

DOE Green Energy (OSTI)

It is critical to understand the behavior of metallic impurities in polycrystalline silicon used for solar cells. These impurities significantly increase the minority carrier recombination rate and, in turn, degrade cell performance. Impurity gettering is a commonly used method to remove these impurities from the material, however, past work has suggested that impurity release from structural defects drastically limits the gettering process. Presently, there is only a limited understanding of impurity release from structural defects. In this work, a correlation between structural defects and the location of metal impurities in as-grown material is established and the release of nickel and copper from structural defects in polycrystalline silicon was studied in as-grown material and after sequential thermal treatments which dissolve the impurities into the silicon matrix. Synchrotron-based x-ray fluorescence impurity mapping with spatial resolution of {approx} 1 {micro}m, was used to determine impurity distributions after each thermal treatment.

McHugo, S.A. [Lawrence Berkeley National Lab., CA (United States). Advanced Light Source; Imaizumi, M. [Toyota Technological Inst., Nagoya (Japan)

1997-04-01T23:59:59.000Z

277

High velocity continuous-flow reactor for the production of solar grade silicon. Second quarterly report  

DOE Green Energy (OSTI)

The objective is to determine the feasibility of a high volume-high velocity continuous reduction reactor as an economical means for producing solar grade polycrystalline silicon. Preheated streams of hydrogen and bromosilanes are used as feed to the reduction reactor. Nucleation and deposition sites are provided by the additional feed of preheated silicon particles to the reactor. The effort has been directed at studying the chemistry taking place in the reactor, determining the factors which influence its course, and making necessary reactor modifications as dictated by observed results. The initial reactor design has been extensively changed. Energy losses due to gas expansion in the nozzle/mixer section of the reactor dictated these design changes. A ''Tee'' configuration, in which the two preheated gas streams are merged at right angles without any expansion, has replaced the nozzle/mixer. Results of the hydrogen reduction of tetrabromosilane with and without the use of silicon deposition substrate particles are analyzed.

Woerner, L.

1978-03-01T23:59:59.000Z

278

Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process  

DOE Patents (OSTI)

A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas.

Ruby, Douglas S. (Albuquerque, NM); Schubert, William K. (Albuquerque, NM); Gee, James M. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

279

Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon  

DOE Patents (OSTI)

A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby the amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenation can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

Kaschmitter, J.L.; Sigmon, T.W.

1995-10-10T23:59:59.000Z

280

Multi-Layer Inkjet Printed Contacts for Silicon Solar Cells: Preprint  

DOE Green Energy (OSTI)

Ag, Cu, and Ni metallizations were inkjet printed with near vacuum deposition quality. The approach developed can be easily extended to other conductors such as Pt, Pd, Au, etc. Thick highly conducting lines of Ag and Cu demonstrating good adhesion to glass, Si, and printed circuit board (PCB) have been printed at 100-200 C in air and N2 respectively. Ag grids were inkjet-printed on Si solar cells and fired through the silicon nitride AR layer at 850 C, resulting in 8% cells. Next generation inks, including an ink that etches silicon nitride, have now been developed. Multi-layer inkjet printing of the etching ink followed by Ag ink produced contacts under milder conditions and gave solar cells with efficiencies as high as 12%.

Curtis, C. J.; van hest, M.; Miedaner, A.; Kaydanova, T.; Smith, L.; Ginley, D. S.

2006-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Large-area Silicon-Film{trademark} panels and solar cells  

DOE Green Energy (OSTI)

This report describes AstroPower`s success in improving its material and processing capabilities during the first phase of this 3-year contract through the Photovoltaic Manufacturing Technology (PVMaT) program. Key results include the demonstration of a 14.6%-efficient Silicon-Film{trademark} solar cell. This laboratory result (1.0 cm{sup 2}) provides the direction needed to develop and optimize continuous, in-line production processes. The continuous nature of the Silicon-Film{trademark} sheet fabrication process is being extended into the solar-cell processing sequence. Plans are in place to make the wafer cleaning, gettering, and diffusion steps all continuous during the scope of this program.

Rand, J.A.; Barnett, A.M.; Checchi, J.C. [AstroPower, Inc., Newark, DE (United States)] [and others

1997-01-01T23:59:59.000Z

282

Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon  

DOE Patents (OSTI)

A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby to amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenization can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

Kaschmitter, James L. (Pleasanton, CA); Sigmon, Thomas W. (Beaverton, OR)

1995-01-01T23:59:59.000Z

283

Plasma etching, texturing, and passivation of silicon solar cells  

DOE Green Energy (OSTI)

The authors improved a self-aligned emitter etchback technique that requires only a single emitter diffusion and no alignments to form self-aligned, patterned-emitter profiles. Standard commercial screen-printed gridlines mask a plasma-etchback of the emitter. A subsequent PECVD-nitride deposition provides good surface and bulk passivation and an antireflection coating. The authors used full-size multicrystalline silicon (mc-Si) cells processed in a commercial production line and performed a statistically designed multiparameter experiment to optimize the use of a hydrogenation treatment to increase performance. They obtained an improvement of almost a full percentage point in cell efficiency when the self-aligned emitter etchback was combined with an optimized 3-step PECVD-nitride surface passivation and hydrogenation treatment. They also investigated the inclusion of a plasma-etching process that results in a low-reflectance, textured surface on multicrystalline silicon cells. Preliminary results indicate reflectance can be significantly reduced without etching away the emitter diffusion.

Ruby, D.S.; Yang, P. [Sandia National Labs., Albuquerque, NM (United States); Zaidi, S.; Brueck, S. [Univ. of New Mexico, Albuquerque, NM (United States); Roy, M.; Narayanan, S. [Solarex, Frederick, MD (United States)

1998-11-01T23:59:59.000Z

284

17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings  

DOE Green Energy (OSTI)

The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

Sopori, B. L.

2007-08-01T23:59:59.000Z

285

GaNPAs Solar Cells that Can Be Lattice-Matched to Silicon  

DOE Green Energy (OSTI)

III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We have proposed the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct bandgaps in the range of 1.5 to 2.0 eV. We have demonstrated the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and shown improvements in material quality by reducing carbon and hydrogen impurities through optimization of growth conditions. We have achieved quantum efficiencies (QE) in these cells as high as 60% and PL lifetimes as high as 3.0 ns.

Geisz, J. F.; Friedman, D. J.; McMahon, W. E.; Ptak, A. J.; Kibbler, A. E.; Olson, J. M.; Kurtz, S.; Kramer, C.; Young, M.; Duda, A.; Reedy, R. C.; Keyes, B. M.; Dippo, P.; Metzger, W. K.

2003-05-01T23:59:59.000Z

286

Low temperature front surface passivation of interdigitated back contact silicon heterojunction solar cell  

DOE Green Energy (OSTI)

The interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell requires a low temperature front surface passivation/anti-reflection structure. Conventional silicon surface passivation using SiO2 or a-SiNx is performed at temperature higher than 400C, which is not suitable for the IBC-SHJ cell. In this paper, we propose a PECVD a-Si:H/a-SiNx:H/a-SiC:H stack structure to passivate the front surface of crystalline silicon at low temperature. The optical properties and passivation quality of this structure are characterized and solar cells using this structure are fabricated. With 2 nm a-Si:H layer, the stack structure exhibits stable passivation with effective minority carrier lifetime higher than 2 ms, and compatible with IBC-SHJ solar cell processing. A critical advantage of this structure is that the SiC allows it to be HF resistant, thus it can be deposited as the first step in the process. This protects the a-Si/c-Si interface and maintains a low surface recombination velocity.

Shu, Brent; Das, Ujjwal; Jani, Omkar; Hegedus, Steve; Birkmire, Robert

2009-06-08T23:59:59.000Z

287

Silicon materials task of the Low-Cost Solar Array Project: Phase IV. Effects of impurities and processing on silicon solar cells. Twenty-first quarterly report, October-December 1980  

DOE Green Energy (OSTI)

The overall objective of this program is to define the effects of impurities, various thermochemical processes, and any impurity-process interactions upon the performance of terrestrial solar cells. The results of the study form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost-benefit relationships for the use of less pure, less costly solar grade silicon. Cr is highly mobile in silicon even at temperatures as low as 600/sup 0/C. Contrasting with earlier data for Mo, Ti, and V, Cr concentrations vary from place to place in polycrystalline silicon wafers and the electrically-active Cr concentration in the polysilicon is more than an order of magnitude smaller than would be projected from single crystal impurity data. We hypothesize that Cr diffuses during ingot cooldown after groth, preferentially segregates to grain boundaries and becomes electrically deactivated. Both Al and Au introduce deep levels when grown into silicon crystals. Accelerated aging data from Ni-contaminated silicon imply that no significant impurity-induced cell performance reduction should be expected over a twenty-year device lifetime. Combined electrical bias and thermal stressing of silicon solar cells containing Nb, Fe, Cu, Ti, Cr, and Ag, respectively produces no performance loss after 100 hour exposures up to 225/sup 0/C. Ti and V, but not Mo, can be gettered from polycrystalline silicon by POCl/sub 3/ or HCl at temperatures of 1000 and 1100/sup 0/C.

Hopkins, R.H.; Hanes, M.H.; Davis, J.R.; Rohatgi, A.; Rai-Choudhury, P.; Mollenkopf, H.C.

1981-01-30T23:59:59.000Z

288

Phase 2 of the array automated assembly task for the low cost silicon solar array project. Final report  

DOE Green Energy (OSTI)

Studies were conducted on several fundamental aspects of electroless nickel/solder metallization for silicon solar cells. A process proposed by Motorola, which precedes the electroless nickel plating with several steps of palladium plating and heat treatment, was compared directly with single step electroless nickel plating. Work has directed toward answering specific questions concerning the effect of silicon surface oxide on nickel plating, effects of thermal stresses on the metallization, sintering of nickel plated on silicon, and effects of exposure to the plating solution on solar cell characteristics. The Motorola process was compared with simple electroless nickel plating in a series of parallel experiments. Results are presented. (WHK)

Petersen, R.C.

1980-11-01T23:59:59.000Z

289

High cycle fatigue of polycrystalline silicon thin films in laboratory air  

E-Print Network (OSTI)

When subjected to alternating stresses, most materials degrade, e.g., suffer premature failure, due to a phenomenon known as fatigue. It is generally accepted that in brittle materials, such as ceramics, cyclic fatigue can only take place where there is some degree of toughening, implying that premature fatigue failure would not be expected in polycrystalline silicon where such toughening is absent. However, the fatigue failure of polysilicon is reported in the present work, based on tests on thirteen thin-film (2 m thick) specimens cycled to failure in laboratory air (~25C, 30-50 % relative humidity), where damage accumulation and failure of the notched cantilever beams were monitored electrically during the test. Specimen lives ranged from about 10 seconds to 34 days (5 x 10 5 to 1 x 10 11 cycles) with the stress amplitude at failure being reduced to ~50 % of the low-cycle strength for lives in excess of 10 9 cycles.

C. L. Muhlstein; S. B. Brown; R. O. Ritchie

2000-01-01T23:59:59.000Z

290

A NOVEL LOW THERMAL BUDGET THIN-FILM POLYSILICON FABRICATION PROCESS FOR LARGE-AREA, HIGH-THROUGHPUT SOLAR CELL PRODUCTION  

SciTech Connect

A novel thin-film poly-Si fabrication process has been demonstrated. This low thermal budget process transforms the single- and multi-layer amorphous silicon thin films into a poly-Si structure in one simple step over a pulsed rapid thermal annealing process with the enhancement of an ultrathin Ni layer. The complete poly-Si solar cell was fabricated in a short period of time without deteriorating the underneath glass substrate. The unique vertical crystallization process including the mechanism is discussed. Influences of the dopant type and process parameters on crystal structure will be revealed. The poly-Si film structure has been proved using TEM, XRD, Raman, and XPS methods. The poly-Si solar cell structure and the performance have been examined. In principle, the new process is potentially applicable to produce large-area thin-film poly-Si solar cells at a high throughput and low cost. A critical issue in this process is to prevent the excessive dopant diffusion during crystallization. Process parameters and the cell structure have to be optimized to achieve the production goal.

Yue Kuo

2010-08-15T23:59:59.000Z

291

Experimental and Molecular Simulation Studies of Silicon ...  

Science Conference Proceedings (OSTI)

Symposium, Solar Cell Silicon ... On the Segregation of Impurities in Solar Silicon ... Silicon PV Wafers: Correlation of Mechanical Properties and Crack...

292

Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction  

DOE Patents (OSTI)

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Toet, Daniel (Mountain View, CA); Sigmon, Thomas W. (Albuquerque, NM)

2005-08-23T23:59:59.000Z

293

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction  

DOE Patents (OSTI)

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Toet, Daniel (Mountain View, CA); Sigmon, Thomas W. (Albuquerque, NM)

2003-01-01T23:59:59.000Z

294

Real time intelligent process control system for thin film solar cell manufacturing  

SciTech Connect

This project addresses the problem of lower solar conversion efficiency and waste in the typical solar cell manufacturing process. The work from the proposed development will lead toward developing a system which should be able to increase solar panel conversion efficiency by an additional 12-15% resulting in lower cost panels, increased solar technology adoption, reduced carbon emissions and reduced dependency on foreign oil. All solar cell manufacturing processes today suffer from manufacturing inefficiencies that currently lead to lower product quality and lower conversion efficiency, increased product cost and greater material and energy consumption. This results in slower solar energy adoption and extends the time solar cells will reach grid parity with traditional energy sources. The thin film solar panel manufacturers struggle on a daily basis with the problem of thin film thickness non-uniformity and other parameters variances over the deposited substrates, which significantly degrade their manufacturing yield and quality. Optical monitoring of the thin films during the process of the film deposition is widely perceived as a necessary step towards resolving the non-uniformity and non-homogeneity problem. In order to enable the development of an optical control system for solar cell manufacturing, a new type of low cost optical sensor is needed, able to acquire local information about the panel under deposition and measure its local characteristics, including the light scattering in very close proximity to the surface of the film. This information cannot be obtained by monitoring from outside the deposition chamber (as traditional monitoring systems do) due to the significant signal attenuation and loss of its scattering component before the reflected beam reaches the detector. In addition, it would be too costly to install traditional external in-situ monitoring systems to perform any real-time monitoring over large solar panels, since it would require significant equipment refurbishing needed for installation of multiple separate ellipsometric systems, and development of customized software to control all of them simultaneously. The proposed optical monitoring system comprises AccuStratas fiber optics sensors installed inside the thin film deposition equipment, a hardware module of different components (beyond the scope of this project) and our software program with iterative predicting capability able to control material bandgap and surface roughness as films are deposited. Our miniature fiber optics monitoring sensors are installed inside the vacuum chamber compartments in very close proximity where the independent layers are deposited (an option patented by us in 2003). The optical monitoring system measures two of the most important parameters of the photovoltaic thin films during deposition on a moving solar panel - material bandgap and surface roughness. In this program each sensor array consists of two fiber optics sensors monitoring two independent areas of the panel under deposition. Based on the monitored parameters and their change in time and from position to position on the panel, the system is able to provide to the equipment operator immediate information about the thin films as they are deposited. This DoE Supply Chain program is considered the first step towards the development of intelligent optical control system capable of dynamically adjusting the manufacturing process on-the-fly in order to achieve better performance. The proposed system will improve the thin film solar cell manufacturing by improving the quality of the individual solar cells and will allow for the manufacturing of more consistent and uniform products resulting in higher solar conversion efficiency and manufacturing yield. It will have a significant impact on the multibillion-dollar thin film solar market. We estimate that the financial impact of these improvements if adopted by only 10% of the industry ($7.7 Billion) would result in about $1.5 Billion in savings by 2015 (at the assumed 20% improvement). This can b

George Atanasoff

2010-10-29T23:59:59.000Z

295

Production of solar grade (SoG) silicon by refining liquid metallurgical grade (MG) silicon: Annual Report: June 10 1998--October 19, 1999  

DOE Green Energy (OSTI)

Pyro-metallurgical refining techniques are being developed for use with molten metallurgical-grade (MG) silicon so that directionally solidified refined MG silicon can be used as solar-grade (SoG) silicon feedstock for photovoltaic applications. The most problematic impurity elements are B and P because of their high segregation coefficients. Refining processes such as evacuation, formation of impurity complexes, oxidation of impurities, and slagging have been effective in removal of impurities from MG silicon. Charge sizes have been scaled up to 60 kg. Impurity analysis of 60-kg charges after refining and directional solidification has shown reduction of most impurities to <1 ppma and B and P to the 10-ppma level. It has been demonstrated that B and P, as well as other impurities, can be reduced from MG silicon. Further reduction of impurities will be necessary for use as SoG silicon. The procedures developed are simple and scaleable to larger charge sizes and carried out in a foundry or MG silicon production plant. Therefore, SoG silicon production using these procedures should be at low cost.

Khattak, C.P.; Joyce, D.B.; Schmid, F.

1999-12-13T23:59:59.000Z

296

Polycrystalline Thin Film Photovoltaics: From the Laboratory to Solar Fields (Presentation)  

SciTech Connect

The conclusions of this report are that: (1) many issues how thin-film solar cells work remain unresolved, requiring further fundamental R and D effort; (2) commercial thin-film PV module production reached 29% in 2005 in the US, indicating much more rapid growth than crystalline Si PV; (3) commercial module performance is increasing based on current knowledge, more R and D will lead to further improvement; and (4) stability of thin-film modules is acceptable ({le} 1% per year power loss) if the right manufacturing processes are used for manufacturing.

von Roedern, B.; Ullal, H.; Zweibel, K.

2006-05-01T23:59:59.000Z

297

Novel wide band gap materials for highly efficient thin film tandem solar cells  

SciTech Connect

Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PVâ??s goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a mixture of solution and physical vapor deposition processing, but these films lacked the p-type doping levels that are required to make decent solar cells. Over the course of the project PLANT PV was able to fabricate efficient CIGS solar cells (8.7%) but could not achieve equivalent performance using AIGS. During the nine-month grant PLANT PV set up a variety of thin film characterization tools (e.g. drive-level capacitance profiling) at the Molecular Foundry, a Department of Energy User Facility, that are now available to both industrial and academic researchers via the grant process. PLANT PV was also able to develop the back end processing of thin film solar cells at Lawrence Berkeley National Labs to achieve 8.7% efficient CIGS solar cells. This processing development will be applied to other types of thin film PV cells at the Lawrence Berkeley National Labs. While PLANT PV was able to study AIGS film growth and optoelectronic properties we concluded that AIGS produced using these methods would have a limited efficiency and would not be commercially feasible. PLANT PV did not apply for the Phase II of this grant.

Brian E. Hardin, Stephen T. Connor, Craig H. Peters

2012-06-11T23:59:59.000Z

298

Retrieving Properties of Thin Clouds from Solar Aureole Measurements  

Science Conference Proceedings (OSTI)

This paper describes a newly designed Sun and Aureole Measurement (SAM) aureolegraph and the first results obtained with this instrument. SAM measurements of solar aureoles produced by cirrus and cumulus clouds were taken at the Atmospheric ...

J. G. DeVore; A. T. Stair; A. LePage; D. Rall; J. Atkinson; D. Villanucci; S. A. Rappaport; P. C. Joss; R. A. McClatchey

2009-12-01T23:59:59.000Z

299

Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems  

E-Print Network (OSTI)

microcrystalline- silicon photovoltaic cell, B) range ofpayback of roof mounted photovoltaic cells. Boustead, I. andmicrocrystalline-silicon photovoltaic cell, B) range of

Zhang, Teresa Weirui

2011-01-01T23:59:59.000Z

300

Solar-Grade Silicon from Metallurgical-Grade Silicon Via Iodine Chemical Vapor Transport Purification: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the atmospheric-pressure in an ''open'' reactor, SiI2 transfers from a hot (>1100C) Si source to a cooler (>750C) Si substrate and decomposes easily via 2SiI2 Si+ SiI4 with up to 5?m/min deposition rate. SiI4 returns to cyclically transport more Si. When the source is metallurgical-grade Si, impurities can be effectively removed by three mechanisms: (1) differing free energies of formation in forming silicon and impurity iodides; (2) distillation; and (3) differing standard free energies of formation during deposition. Distillation has been previously reported. Here, we focused on mechanisms (1) and (3). We made feedstock, analyzed the impurity levels, grew Czochralski single crystals, and evaluated crystal and photovoltaic properties. Cell efficiencies of 9.5% were obtained. Incorporating distillation (step 2) should increase this to a viable level.

Ciszek, T. F.; Wang, T. H.; Page, M. R.; Bauer, R. E.; Landry, M. D.

2002-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Low-cost silicon solar array project. First annual report, January 1975--March 1976  

DOE Green Energy (OSTI)

The Low-Cost Silicon Solar Array Project (LSSA) was established to greatly reduce the price of solar arrays by the improvement of manufacturing technology, by adaptation of mass production techniques, and by helping achievement of user acceptance. The Project's approach includes the development of technology, its transfer by industry to commercial practice, the evaluation of the economics involved, and the stimulation of market growth. The activities and progress of the LSSA Project during its first year are described in this document which covers all Project activities, with primary emphasis on the technical plans and accomplishments. The development of manufacturing technology is now and will continue to be performed principally by industries and universities. To date, 24 contractors are working on new silicon-refinement processes, silicon-sheet-growth techniques, encapsulants, and automated-assembly studies. Nine more contractors have been selected to perform additional technology investigations and their contracts are being negotiated. Additional contracts will be issued in the future as promising ideas appear. (WDM)

Not Available

1976-08-09T23:59:59.000Z

302

Rapid thermal processing of high-efficiency silicon solar cells with controlled in-situ annealing  

DOE Green Energy (OSTI)

Silicon solar cell efficiencies of 17.1%, 16.4%, 14.8%, and 14.9% have been achieved on FZ, Cz, multicrystalline (mc-Si), and dendritic web (DW) silicon, respectively, using simplified, cost-effective rapid thermal processing (RTP). These represent the highest reported efficiencies for solar cells processed with simultaneous front and back diffusion with no conventional high-temperature furnace steps. Appropriate diffusion temperature coupled with the added in-situ anneal resulted in suitable minority-carrier lifetime and diffusion profiles for high-efficiency cells. The cooling rate associated with the in-situ anneal can improve the lifetime and lower the reverse saturation current density (J{sub 0}), however, this effect is material and base resistivity specific. PECVD antireflection (AR) coatings provided low reflectance and efficient front surface and bulk defect passivation. Conventional cells fabricated on FZ silicon by furnace diffusions and oxidations gave an efficiency of 18.8% due to greater short wavelength response and lower J{sub 0}.

Doshi, P.; Rohatgi, A.; Ropp, M.; Chen, Z. [Georgia Institute of Technology, Atlanta, GA (United States). Univ. Center of Excellence for Photovoltaics Research and Education; Ruby, D. [Sandia National Labs., Albuquerque, NM (United States); Meier, D.L. [EBARA Solar, Inc., Large, PA (United States)

1995-01-01T23:59:59.000Z

303

Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer  

E-Print Network (OSTI)

Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric current gain obtained from higher built-in electric field. Light trapping schemes can increase the effective optical absorption length and thus enhance the electric current for thinner solar cells. Here a new light trapping scheme based on light trapping transparent conducting oxide layer (LT-TCO) is proposed to enhance the performance of thin film solar cells. Three different configurations of integrating the LT-TCO layer in solar cells are proposed and evaluated. This research aims to develop the LT-TCO layer with surface texture and good conductivity by pulsed laser deposition (PLD) technique at low temperature. The LT-TCO layer is fabricated by PLD deposition of Al-doped ZnO to achieve multilayer films by tuning of oxygen pressure. The light trapping effect is examined by optical transmittance measurement and the surface texture is characterized by transmission electron microscopy (TEM) technique. The conductivity of LT-TCO layer is measured by resistivity measurement. Thin film CdTe/CdS solar cells are fabricated by PLD technique to develop baseline solar cells for integration of LT-TCO layer. The as-deposited thin film solar cells show relatively low performance and are further processed with various post-deposition treatments to seek efficiency enhancement. The effects of different processes on cell performance are examined by electrical, optical, and microstructure studies. Air annealing of CdS layer and CdCl2 treatment of CdTe layer combined are found to yield the best cell performance. The fabrication issues that limit the cell performance are discussed and future optimizations in fabrication processes are suggested.

Lu, Tianlin

2011-05-01T23:59:59.000Z

304

SolarMorph Pte Ltd | Open Energy Information  

Open Energy Info (EERE)

Pte Ltd Place Singapore Product Singapore-based manufacturer of amorphous silicon thin-film products. References SolarMorph Pte Ltd1 LinkedIn Connections CrunchBase...

305

Public release of optimization of metallization scheme for thin emitter wrap-through solar cells for higher efficiency, reduced precious metal costs, and reduced stress.  

DOE Green Energy (OSTI)

Back-contact crystalline-silicon photovoltaic solar cells and modules offer a number of advantages, including the elimination of grid shadowing losses, reduced cost through use of thinner silicon substrates, simpler module assembly, and improved aesthetics. While the existing edge tab method for interconnecting and stringing edge-connected back contact cells is acceptably straightforward and reliable, there are further gains to be exploited when you have both contact polarities on one side of the cell. In this work, we produce 'busbarless' emitter wrap-through solar cells that use 41% of the gridline silver (Ag) metallization mass compared to the edge tab design. Further, series resistance power losses are reduced by extraction of current from more places on the cell rear, leading to a fill factor improvement of about 6% (relative) on the module level. Series resistance and current-generation losses associated with large rear bondpads and busbars are eliminated. Use of thin silicon (Si) wafers is enabled because of the reduced Ag metallization mass and by interconnection with conductive adhesives leading to reduced bow. The busbarless cell design interconnected with conductive adhesives passes typical International Electrotechnical Commission damp heat and thermal cycling test.

Ruby, Douglas Scott; Murphy, Brian (Advent Solar, Inc., Albuquerque, NM); Meakin, David (Advent Solar, Inc., Albuquerque, NM); Dominguez, Jason (Advent Solar, Inc., Albuquerque, NM); Hacke, Peter (Advent Solar, Inc., Albuquerque, NM)

2008-08-01T23:59:59.000Z

306

Silicon materials task of the Low Cost Silicon Solar Array Project (Part 2). Fifth quarterly report and summary, 1 October 1976--31 December 1976. [Definition of purity requirements  

DOE Green Energy (OSTI)

The objective of this program is to develop and define purity requirements for Solar Grade Silicon by exploring the effects of metal impurities on the performance of terrestrial silicon solar cells. The first phase of this effort is now completed. Fifty-two Czochralski ingots and forty-four dendritic web specimens have been grown, chemically analyzed, sampled, and tested for OCD and PCD lifetime and solar cell performance. The results of this study, compiled with much of the experimental data, are intended both as a summary of the work and as a reference for metal impurity effects on silicon solar cells.

Hopkins, R.H.; Davis, J.R.; Rai-Choudhury, P.; Blais, P.D.; McHugh, J.P.; Seidensticker, R.G.; McCormick, J.R.

1977-01-01T23:59:59.000Z

307

Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate  

SciTech Connect

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

2006-05-30T23:59:59.000Z

308

Determination of a definition of solar grade silicon. Second quarterly report, January 1--March 31, 1976  

DOE Green Energy (OSTI)

Solar device fabrication and evaluation are the key elements of this contract. Test devices from sixteen experimental crystals have been processed to date. A 12-chip LED, specifically developed for this project, now provides ten times more light than the standard lamp and allows meaningful measurements of the minority carrier lifetime in the substrate before processing. In Czochralski crystal growth thirteen acceptable single crystals resulted from 23 runs. All but one of the originally scheduled float-zone crystals and two second-generation crystals have been grown. All material prepared has been characterized and has been found to deviate considerably from semiconductor silicon standards. (WDM)

Hill, D.E.

1976-01-01T23:59:59.000Z

309

Silicon Materials Task of the Low Cost Solar Array Project (Phase II). Ninth quarterly report, October 1--December 31, 1977  

DOE Green Energy (OSTI)

It was proposed to investigate and define the effects of various processes, contaminants and process-contaminant interactions in the performance of terrestrial solar cells. The major effort has been in the areas of crystal growth and thermal processing, comparison of impurity effects in low and high resistivity silicon, modeling the behavior of p-type ingots containing Mo and C, and, quantitative analysis of bulk lifetime and junction degradation effects in contaminated solar cells. The lifetime of uncontaminated silicon was mesured as a function of heat treatment temperature (200 to 1200/sup 0/C). The performance of solar cells fabricated on silicon web crystals grown from melts containing about 10/sup 18/cm/sup -3/ of Cr, Mn, Fe, Ni, Ti and V, respectively, were measured. Deep level spectroscopy of metal-contaminated ingots has been employed to determine the level and density of recombination centers due to Ti, V, Ni, and Cr.

Hopkins, R.H.; Davis, J.R.; Blais, P.D.; Rohatgi, A.; Rai-Choudhury, P.; Hanes, M.H.; McCormick, J.R.

1977-01-01T23:59:59.000Z

310

Real time intelligent process control system for thin film solar cell manufacturing  

DOE Green Energy (OSTI)

All solar cell manufacturing processes today suffer from manufacturing inefficiencies that currently lead to lower product quality and lower conversion efficiency, increased product cost and greater material and energy consumption. This results in slower solar energy adoption and extends the time solar cells will reach grid parity with traditional energy sources. The thin film solar panel manufacturers struggle on a daily basis with the problem of thin film thickness non-uniformity and other parameters variances over the deposited substrates, which significantly degrade their manufacturing yield and quality. Optical monitoring of the thin films during the process of the film deposition is widely perceived as a necessary step towards resolving the non-uniformity and non-homogeneity problem. In order to enable the development of an optical control system for solar cell manufacturing, a new type of low cost optical sensor is needed, able to acquire local information about the panel under deposition and measure its local characteristics, including the light scattering in very close proximity to the surface of the film. This information cannot be obtained by monitoring from outside the deposition chamber (as traditional monitoring systems do) due to the significant signal attenuation and loss of its scattering component before the reflected beam reaches the detector. In addition, it would be too costly to install traditional external in-situ monitoring systems to perform any real-time monitoring over large solar panels, since it would require significant equipment refurbishing needed for installation of multiple separate ellipsometric systems, and development of customized software to control all of them simultaneously. The proposed optical monitoring system comprises AccuStratas fiber optics sensors installed inside the thin film deposition equipment, a hardware module of different components (beyond the scope of this project) and our software program with iterative predicting capability able to control material bandgap and surface roughness as films are deposited. Our miniature fiber optics monitoring sensors are installed inside the vacuum chamber compartments in very close proximity where the independent layers are deposited (an option patented by us in 2003). The optical monitoring system measures two of the most important parameters of the photovoltaic thin films during deposition on a moving solar panel - material bandgap and surface roughness. In this program each sensor array consists of two fiber optics sensors monitoring two independent areas of the panel under deposition. Based on the monitored parameters and their change in time and from position to position on the panel, the system is able to provide to the equipment operator immediate information about the thin films as they are deposited. This DoE Supply Chain program is considered the first step towards the development of intelligent optical control system capable of dynamically adjusting the manufacturing process on-the-fly in order to achieve better performance. The proposed system will improve the thin film solar cell manufacturing by improving the quality of the individual solar cells and will allow for the manufacturing of more consistent and uniform products resulting in higher solar conversion efficiency and manufacturing yield. It will have a significant impact on the multibillion-dollar thin film solar market. We estimate that the financial impact of these improvements if adopted by only 10% of the industry ($7.7 Billion) would result in about $1.5 Billion in savings by 2015 (at the assumed 20% improvement). This can b

George Atanasoff

2010-10-29T23:59:59.000Z

311

Silicon materials task of the Low-Cost Solar Array Project (Phase IV). Effects of impurities and processing on silicon solar cells. Twentieth quarterly report, July-September 1980  

DOE Green Energy (OSTI)

The overall objective of this program is to define the effects of impurities, various thermochemical processes and any impurity-process interactions upon the performance of terrestrial solar cells. The results of the study form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost-benefit relationships for the use of less pure, less costly solar grade silicon. Spectral response measurements made on single crystal and polycrystalline silicon solar cells containing specific impurities agreed well with measured cell efficiencies. For polycrystalline cells it is shown that both grain boundaries and metallic impurities reduce carrier lifetime, resulting in reduced red response and reduced cell efficiency. Spectral response and DLTS measurements on chromium-doped polycrystalline silicon cells indicate an interaction between chromium and grain boundaries; the nature of this interaction is not yet understood. Measurements were made to evaluate possible long term effects of copper contamination on solar cell performance. Nine groups of cells, including a baseline cell group, are undergoing electrical/temperature tests to determine whether electric fields play a role in long term cell degradation. A mathematical model for impurity effects in high efficiency solar cells has been developed.

Hopkins, R.H.; Hanes, M.H.; Davis, J.R.; Rohatgi, A.; Rai-Choudhury, P.; Mollenkopf, H.C.

1980-11-14T23:59:59.000Z

312

Back surface cell structures for reducing recombination in CZ silicon solar cells  

DOE Green Energy (OSTI)

Mass-produced terrestrial CZ silicon solar cells are currently entering the domain in which bulk diffusion length is comparable to the cell thickness, so that recombination at the back surface can have a significant effect on device performance. Three manufacturable processes that address the problem of back recombination are examined here: boron diffusion from a deposited doped SiO{sub 2}, layer; Al-alloyed layers using screen-printed paste; and use of a collecting n* layer on the back interdigitated with the positive electrode. 104-cm{sup 2} cells fabricated at Siemens Solar Industries using these back surface structures are characterized by current-voltage, spectral response, photoconductivity decay, and SIMS measurements.

King, R.R.; Mitchell, K.W. [Siemens Solar Industries, Camarillo, CA (United States); Gee, J.M. [Sandia National Labs., Albuquerque, NM (United States)

1994-12-31T23:59:59.000Z

313

High deposition rate preparation of amorphous silicon solar cells by rf glow discharge decomposition of disilane  

SciTech Connect

The optical and electrical properties of hydrogenated amorphous silicon films produced by rf glow discharge decomposition of disilane diluted in helium (Si/sub 2/H/sub 6//He = 1/9) have been studied while systematically varying the film deposition rate. The properties and composition of the films were monitored by measuring the optical band gap, IR vibrational spectrum, dark conductivity, and the photoconductivity as a function of the deposition rate. The photoluminescence of the high deposition rate films gave a peak at 1.33 eV. These films, whose properties are rather similar to those of the conventional a-Si:H films prepared from monosilane, have been used to fabricate nip-type a-Si:H solar cells. At a deposition rate of 11 A/sec, a conversion efficiency of 6.86% was obtained. This high efficiency shows that disilane is applicable for mass production fabrication of a-Si:H solar cells.

Kenne, J.; Ohashi, Y.; Matsushita, T.; Konagai, M.; Takahashi, K.

1984-01-15T23:59:59.000Z

314

Hydrogenated amorphous silicon films prepared by glow discharge of disilane  

DOE Green Energy (OSTI)

This report describes the results of an investigation of the properties of hydrogenated amorphous silicon films and the efficiency of amorphous silicon solar cells deposited from disilane at rates of 1.5 nanometers/second or greater. The study was divided into two parts, investigation of basic materials properties of hydrogenated amorphous silicon thin films and the fabrication of glass-P-I-N-metal solar cells. The thin film materials properties investigated included the dark conductivity, photoconductivity, dihydride/monohydride concentration ratio, activation energy, and mobility-lifetime product. Hydrogenated amorphous silicon solar cells were fabricated with an intrinsic layer which was deposited at 1.5 nanometers/second. The absolute and reverse bias quantum yields were measured and solar cell efficiencies of 5% were achieved. Attempts to increase the efficiency by reverse bias annealing are also reported. 7 refs., 27 figs.

Wiesmann, H.J. (UHT Corp., Dobbs Ferry, NY (USA))

1990-01-01T23:59:59.000Z

315

Solar Torx New Solar Ventures | Open Energy Information  

Open Energy Info (EERE)

Torx New Solar Ventures Torx New Solar Ventures Jump to: navigation, search Name Solar Torx / New Solar Ventures Place Arizona Product Set up in November 2005 to secure finance for a thin-film amorphous silicon cell and module manufacturing plant, and an associated 300MW power project. No evidence of progress as of June 2008, has probably been abandoned. References Solar Torx / New Solar Ventures[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Torx / New Solar Ventures is a company located in Arizona . References ↑ "Solar Torx / New Solar Ventures" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Torx_New_Solar_Ventures&oldid=351340" Categories:

316

Silicon sheet with molecular beam epitaxy for high efficiency solar cells. Final technical report, March 22, 1982-April 30, 1984  

DOE Green Energy (OSTI)

A two-year program has been carried out for the Jet Propulsion Laboratory in which the UCLA silicon MBE facility has been used to attempt to grow silicon solar cells of high efficiency. MBE ofers the potential of growing complex and arbitrary doping profiles with 10 A depth resolution. It is the only technique taht can readily grow built-in front and back surface fields of any desired depth and value in silicon solar cells, or the more complicated profiles needed for a double junction cascade cell, all in silicon, connected in series by a tunnel junction. Although the dopant control required for such structures has been demonstrated in silicon by UCLA, crystal quality at the p-n junctions is still too poor to allow the other advantages to be exploited. Results from other laboratories indicate that this problem will soon be overcome. A computer analysis of the double cascade all in silicon shows that efficiencies can be raised over that of any single silicon cell by 1 or 2%, and that open circuit voltage of almost twice that of a single cell should be possible.

Not Available

1984-01-01T23:59:59.000Z

317

Boron arsenide thin film solar cell development. Final report  

DOE Green Energy (OSTI)

Pyrolytic decomposition of diborane and arsine has been used in attempts to grow polycrystalline BAs films. This method, however, produced only amorphous films for deposition temperatures below 920/sup 0/C and polycrystalline boron subarsenide (B/sub 12/As/sub 2/) flms for deposition temperatures above this value. The amorphous films have been determined to have a significant arsenic content but the actual stoichiometry was not obtained. The films were adherent on single crystal sapphire (0001), (111) silicon, (0001) SiC, and polycrystalline SiC but were found not to be adherent to substrates of fused quartz, tungsten, and molybdenum. It was also found that all films deposited above 650/sup 0/C were p-type while those deposited below 600/sup 0/C were usually n-type. Polycrystalline BAs and B/sub 12/As/sub 2/ was produced by reaction of the elements in a closed tube. The amorphous films showed an indirect or non-direct optical bandgap from 1.0 to 1.7 eV with the most probable values between 1.2 to 1.4 eV. The crystalline BAs powder shows a bandgap near 1.0 eV. Photoconductance time constants have been measured for films deposited on (0001) sapphire and (0001) SiC. Attempts at doping the amorphous films were generally unsuccessful. A polycrystalline powder sample was successfully doped with sulfur. Attempts were made to produce a Schottky barrier diode by evaporating Al dots onto an amorphous film on graphite without a post-evaporation anneal. An MIS structure was also attempted by baking an amorphous film in air at 280/sup 0/C before evaporation of aluminum. Although nonlinear characteristics were obtained, none of the devices showed any photovoltaic response. A p-type amorphous film was deposited on an n-type silicon substrate to form a p-n heterojunction. This device did exhibit a photovoltaic response but it is believed that the photogeneration was occurring primarily in the silicon substrate.

Boone, J.L.; Van Doren, T.P.

1980-09-01T23:59:59.000Z

318

Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells  

DOE Green Energy (OSTI)

This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

Chu, T.L. (University of South Florida, Tampa, FL (United States))

1992-04-01T23:59:59.000Z

319

Field collapse due to band-tail charge in amorphous silicon solar cells  

SciTech Connect

It is common for the fill factor to decrease with increasing illumination intensity in hydrogenated amorphous silicon solar cells. This is especially critical for thicker solar cells, because the decrease is more severe than in thinner cells. Usually, the fill factor under uniformly absorbed red light changes much more than under strongly absorbed blue light. The cause of this is usually assumed to arise from space charge trapped in deep defect states. The authors model this behavior of solar cells using the Analysis of Microelectronic and Photonic Structures (AMPS) simulation program. The simulation shows that the decrease in fill factor is caused by photogenerated space charge trapped in the band-tail states rather than in defects. This charge screens the applied field, reducing the internal field. Owing to its lower drift mobility, the space charge due to holes exceeds that due to electrons and is the main cause of the field screening. The space charge in midgap states is small compared with that in the tails and can be ignored under normal solar-cell operating conditions. Experimentally, the authors measured the photocapacitance as a means to probe the collapsed field. They also explored the light intensity dependence of photocapacitance and explain the decrease of FF with the increasing light intensity.

Wang, Qi; Crandall, R.S. [National Renewable Energy Lab., Golden, CO (United States); Schiff, E.A. [Syracuse Univ., NY (United States)

1996-05-01T23:59:59.000Z

320

Low-Cost Silicon Solar Array Project. Quarterly report 3, October 1976--December 1976  

SciTech Connect

The potential for future widespread use of photovoltaic systems for the generation of electric power was the motivation for the establishment, in January 1975, of the Photovoltaic Conversion Program by ERDA's Division of Solar Energy. The Program's activities are planned to develop and to promote the use of photovoltaic systems to such an extent that the private sector will produce and utilize cost-competitive photovoltaic systems. As part of the ERDA Program, the Low-Cost Silicon Solar Array Project (LSSA) was established in January 1975. The activities and progress of the LSSA Project during the months of October, November, and December 1976 are described. The Project objective is to develop the national capability to produce low-cost, long-life photovoltaic arrays at a rate greater than 500 megawatts per year and a price of less than $500 per kilowatt peak by 1986. The array performance goals include an efficiency greater than 10% and an operating lifetime in excess of 20 years. The approach is to reduce the cost of solar cell arrays by improving solar array manufacturing technology and by increasing solar array production capacity and quantity. Forty-seven contracts have been awarded to date, to industrial firms and university and independent laboratories for experimental work, process development and analysis, technology assessment, and the production of solar-array modules. Approximately 58 kW of state-of-the-art modules have been delivered; design development is under way for a second block of moderately advanced modules, and planning for subsequent module procurements has begun.

1976-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Low-Cost Silicon Solar Array Project. Quarterly report 3, October 1976--December 1976  

DOE Green Energy (OSTI)

The potential for future widespread use of photovoltaic systems for the generation of electric power was the motivation for the establishment, in January 1975, of the Photovoltaic Conversion Program by ERDA's Division of Solar Energy. The Program's activities are planned to develop and to promote the use of photovoltaic systems to such an extent that the private sector will produce and utilize cost-competitive photovoltaic systems. As part of the ERDA Program, the Low-Cost Silicon Solar Array Project (LSSA) was established in January 1975. The activities and progress of the LSSA Project during the months of October, November, and December 1976 are described. The Project objective is to develop the national capability to produce low-cost, long-life photovoltaic arrays at a rate greater than 500 megawatts per year and a price of less than $500 per kilowatt peak by 1986. The array performance goals include an efficiency greater than 10% and an operating lifetime in excess of 20 years. The approach is to reduce the cost of solar cell arrays by improving solar array manufacturing technology and by increasing solar array production capacity and quantity. Forty-seven contracts have been awarded to date, to industrial firms and university and independent laboratories for experimental work, process development and analysis, technology assessment, and the production of solar-array modules. Approximately 58 kW of state-of-the-art modules have been delivered; design development is under way for a second block of moderately advanced modules, and planning for subsequent module procurements has begun.

Not Available

1976-01-01T23:59:59.000Z

322

Development of manufacturing capability for high-concentration, high-efficiency silicon solar cells  

DOE Green Energy (OSTI)

This report presents a summary of the major results from a program to develop a manufacturable, high-efficiency silicon concentrator solar cell and a cost-effective manufacturing facility. The program was jointly funded by the Electric Power Research Institute, Sandia National Laboratories through the Concentrator Initiative, and SunPower Corporation. The key achievements of the program include the demonstration of 26%-efficient silicon concentrator solar cells with design-point (20 W/cm{sup 2}) efficiencies over 25%. High-performance front-surface passivations; that were developed to achieve this result were verified to be absolutely stable against degradation by 475 days of field exposure at twice the design concentration. SunPower demonstrated pilot production of more than 1500 of these cells. This cell technology was also applied to pilot production to supply 7000 17.7-cm{sup 2} one-sun cells (3500 yielded wafers) that demonstrated exceptional quality control. The average efficiency of 21.3% for these cells approaches the peak efficiency ever demonstrated for a single small laboratory cell within 2% (absolute). Extensive cost models were developed through this program and calibrated by the pilot-production project. The production levels achieved indicate that SunPower could produce 7-10 MW of concentrator cells per year in the current facility based upon the cell performance demonstrated during the program.

Sinton, R.A.; Verlinden, P.J.; Crane, R.A.; Swanson, R.N. [SunPower Corp., Sunnyvale, CA (United States)

1996-10-01T23:59:59.000Z

323

Reaching Grid Parity Using BP Solar Crystalline Silicon Technology: A Systems Class Application  

DOE Green Energy (OSTI)

The primary target market for this program was the residential and commercial PV markets, drawing on BP Solar's premium product and service offerings, brand and marketing strength, and unique routes to market. These two markets were chosen because: (1) in 2005 they represented more than 50% of the overall US PV market; (2) they are the two markets that will likely meet grid parity first; and (3) they are the two market segments in which product development can lead to the added value necessary to generate market growth before reaching grid parity. Federal investment in this program resulted in substantial progress toward the DOE TPP target, providing significant advancements in the following areas: (1) Lower component costs particularly the modules and inverters. (2) Increased availability and lower cost of silicon feedstock. (3) Product specifically developed for residential and commercial applications. (4) Reducing the cost of installation through optimization of the products. (5) Increased value of electricity in mid-term to drive volume increases, via the green grid technology. (6) Large scale manufacture of PV products in the US, generating increased US employment in manufacturing and installation. To achieve these goals BP Solar assembled a team that included suppliers of critical materials, automated equipment developers/manufacturers, inverter and other BOS manufacturers, a utility company, and University research groups. The program addressed all aspects of the crystalline silicon PV business from raw materials (particularly silicon feedstock) through installation of the system on the customers site. By involving the material and equipment vendors, we ensured that supplies of silicon feedstock and other PV specific materials like encapsulation materials (EVA and cover glass) will be available in the quantities required to meet the DOE goals of 5 to 10 GW of installed US PV by 2015 and at the prices necessary for PV systems to reach grid parity in 2015. This final technical report highlights the accomplishments of the BP Solar technical team from 2006 to the end of the project in February 2010. All the main contributors and team members are recognized for this accomplishment and their endeavors are recorded in the twelve main tasks described here.

Cunningham, Daniel W; Wohlgemuth, John; Carlson, David E; Clark, Roger F; Gleaton, Mark; Posbic, John P; Zahler, James

2010-12-06T23:59:59.000Z

324

Reaching Grid Parity Using BP Solar Crystalline Silicon Technology: A Systems Class Application  

SciTech Connect

The primary target market for this program was the residential and commercial PV markets, drawing on BP Solar's premium product and service offerings, brand and marketing strength, and unique routes to market. These two markets were chosen because: (1) in 2005 they represented more than 50% of the overall US PV market; (2) they are the two markets that will likely meet grid parity first; and (3) they are the two market segments in which product development can lead to the added value necessary to generate market growth before reaching grid parity. Federal investment in this program resulted in substantial progress toward the DOE TPP target, providing significant advancements in the following areas: (1) Lower component costs particularly the modules and inverters. (2) Increased availability and lower cost of silicon feedstock. (3) Product specifically developed for residential and commercial applications. (4) Reducing the cost of installation through optimization of the products. (5) Increased value of electricity in mid-term to drive volume increases, via the green grid technology. (6) Large scale manufacture of PV products in the US, generating increased US employment in manufacturing and installation. To achieve these goals BP Solar assembled a team that included suppliers of critical materials, automated equipment developers/manufacturers, inverter and other BOS manufacturers, a utility company, and University research groups. The program addressed all aspects of the crystalline silicon PV business from raw materials (particularly silicon feedstock) through installation of the system on the customers site. By involving the material and equipment vendors, we ensured that supplies of silicon feedstock and other PV specific materials like encapsulation materials (EVA and cover glass) will be available in the quantities required to meet the DOE goals of 5 to 10 GW of installed US PV by 2015 and at the prices necessary for PV systems to reach grid parity in 2015. This final technical report highlights the accomplishments of the BP Solar technical team from 2006 to the end of the project in February 2010. All the main contributors and team members are recognized for this accomplishment and their endeavors are recorded in the twelve main tasks described here.

Cunningham, Daniel W; Wohlgemuth, John; Carlson, David E; Clark, Roger F; Gleaton, Mark; Posbic, John P; Zahler, James

2010-12-06T23:59:59.000Z

325

Delayed fracture of silicon. Silicon sheet growth development for the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project. Final report  

DOE Green Energy (OSTI)

Bar specimens were cut from ingots of single crystal silicon, and acid-etched prior to testing. Artificial surface flaws were introduced in specimens by indentation with a Knoop hardness tester. The specimens were loaded in four-point bending to 95% of the nominal fracture stress, while keeping the surface area, containing the flaw, wet with test liquids. No evidence of delayed fracture, and, therefore stress corrosion, of single crystal silicon was observed for liquid environments including water, acetone and aqueous solutions of NaCl, NH/sub 4/OH, and HNO/sub 3/, when tested with a flaw parallel to a (110) surface. The fracture toughness was calculated to be K/sub IC/ = 0.591 x 10/sup 6/ N/m/sup 3/2/.

Chen, T.J.; Knapp, W.J.

1978-03-31T23:59:59.000Z

326

Improved Transparent Conducting Oxides Boost Performance of Thin-Film Solar Cells (Fact Sheet)  

DOE Green Energy (OSTI)

Today?s thin-film solar cells could not function without transparent conducting oxides (TCOs). TCOs act as a window, both protecting the cell and allowing light to pass through to the cell?s active layers. Until recently, TCOs were seen as a necessary, but static, layer of a thin-film photovoltaic (PV) cell. But a group of researchers at the National Renewable Energy Laboratory (NREL) has identified a pathway to producing improved TCO films that demonstrate higher infrared transparency. To do so, they have modified the TCOs in ways that did not seem possible a few years ago.

Not Available

2011-02-01T23:59:59.000Z

327

Silicon materials task of the low cost solar array project (Phase III). Effects of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 2: analysis of impurity behavior  

DOE Green Energy (OSTI)

The object of this phase of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the properties of silicon and on the performance of terrestrial silicon solar cells. The study encompassed topics including thermochemical (gettering) treatments, base doping concentration, base doping type (n vs. p), grain boundary-impurity interaction, non-uniformity of impurity distribution, long term effects of impurities, as well as synergic and complexing phenomena. The program approach consists in: (1) the growth of doubly and multiply-doped silicon single crystals containing a baseline boron or phosphorus dopant and specific impurities which produce deep levels in the forbidden band gap; (2) assessment of these crystals by chemical, microstructural, electrical and solar cell tests; (3) correlation of the impurity type and concentration with crystal quality and device performance; and (4) delineation of the role of impurities and processing on subsequent silicon solar cell performance. The overall results reported are based on the assessment of nearly 200 silicon ingots. (WHK)

Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

1980-01-23T23:59:59.000Z

328

Improved performance of amorphous silicon solar cells via scattering from surface plasmon polaritons in nearby metallic nanoparticles  

E-Print Network (OSTI)

s to remove the surface oxide. A 20 nm indium tin oxide ITO contact layer was then depos- ited by rf.S. National Renewable Energy Laboratory for providing a-Si:H thin films for this work. 1 A. Luque and S An engineered enhancement in short-circuit current density and energy conversion efficiency in amorphous silicon

Yu, Edward T.

329

22nd European Photovoltaic Solar Energy Conference, Milan, 3-7 September 2007 Cu(InGa)Se2 THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

22nd European Photovoltaic Solar Energy Conference, Milan, 3-7 September 2007 Cu(InGa)Se2 THIN-FILM SOLAR CELLS: COMPARATIVE LIFE-CYCLE ANALYSIS OF BUFFER LAYERS Vasilis M. Fthenakis and Hyung Chul Kim National Photovoltaic EH&S Research Center Brookhaven National Laboratory Upton, NY 11973, USA ABSTRACT

330

Inks for Ink Jet Printed Contacts for High Performance Silicon Solar Cells: Cooperative Research and Development Final Report, CRADA No. CRD-06-199  

Science Conference Proceedings (OSTI)

The work under the proposed CRADA will be a joint effort by BP Solar and NREL to develop new types of high performance inks for high quality contacts to silicon solar cells. NREL will develop inks that have electronic properties that will allow the formation of high quality ohmic contacts to n- and p-type crystalline silicon, and BP Solar will evaluate these contacts in test contact structures.

Ginley, D.

2013-01-01T23:59:59.000Z

331

Final project report - CRADA with United Solar Technologies and Pacific Northwest Laboratory (PNL-021): Thin film materials for low-cost high performance solar concentrators  

DOE Green Energy (OSTI)

The objectives of this project were as follows: To develop and evaluate promising low-cost dielectric and polymer-protected thin-film reflective metal coatings to be applied to preformed continuously-curved solar reflector panels to enhance their solar reflectance, and to demonstrate protected solar reflective coatings on preformed solar concentrator panels. The opportunity for this project arose from a search by United Solar Technologies (UST) for organizations and facilities capable of applying reflective coatings to large preformed panels. PNL was identified as being uniquely qualified to participate in this collaborative project.

Martin, P.M.; Affinito, J.D.; Gross, M.E.; Bennett, W.D.

1995-03-01T23:59:59.000Z

332

Characterization of the Electronic and Chemical Structure at the Thin Film Solar Cell Interfaces: June 2005 -- June 2009  

DOE Green Energy (OSTI)

Study using photoelectron spectroscopy, inverse photoemission, and X-ray absorption and emission to derive the electronic structure of interfaces in CIGSS and CdTe thin-film solar cells.

Heske, C.

2009-09-01T23:59:59.000Z

333

Solar Chemical Peculiarities? By  

E-Print Network (OSTI)

Several investigations of FGK stars in the solar neighborhood have suggested that thin-disk stars with an iron abundance similar to the Sun appear to show higher abundances of other elements, such as silicon, titanium, or nickel. Offsets could arise if the samples contain stars with ages, mean galactocentric distances, or kinematics, that differ on average from the solar values. They could also arise due to systematic errors in the abundance determinations, if the samples contain stars that are different from the Sun regarding their atmospheric parameters. We re-examine this issue by studying a sample of 80 nearby stars with solar-like colors and luminosities. Among these solar analogs, the objects with solar iron abundances exhibit solar abundances of carbon, silicon, calcium, titanium and nickel. 1.

Carlos Allende Prieto

2006-01-01T23:59:59.000Z

334

Solar Chemical Peculiarities?  

E-Print Network (OSTI)

Several investigations of FGK stars in the solar neighborhood have suggested that thin-disk stars with an iron abundance similar to the Sun appear to show higher abundances of other elements, such as silicon, titanium, or nickel. Offsets could arise if the samples contain stars with ages, mean galactocentric distances, or kinematics, that differ on average from the solar values. They could also arise due to systematic errors in the abundance determinations, if the samples contain stars that are different from the Sun regarding their atmospheric parameters. We re-examine this issue by studying a sample of 80 nearby stars with solar-like colors and luminosities. Among these solar "analogs", the objects with solar iron abundances exhibit solar abundances of carbon, silicon, calcium, titanium and nickel.

Carlos Allende Prieto

2006-12-08T23:59:59.000Z

335

Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems  

E-Print Network (OSTI)

Life cycle analysis study of solar pv systems: an example ofa 2.7 kwp distributed solar pv system in singapore. Solarcycle analysis of solar pv based electricity generation: a

Zhang, Teresa Weirui

2011-01-01T23:59:59.000Z

336

Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells  

E-Print Network (OSTI)

Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc- Si) triple-junction solar cell due to its higher optical investigations of nc-SiGe:H thin films made by hot-wire chemical vapor deposition (HWCVD) with a coil

Deng, Xunming

337

Using radiative transfer equation to model absorption by thin Cu(In,Ga)Se2  

E-Print Network (OSTI)

on Photovoltaic Energy Conversion, K. Kurokawa ed. (Arisumi, Osaka, Japan, 2003), pp. 344­347. 10. F. Leblanc, J European Photovoltaic Solar Energy Conference, James & James ed. (Alden, Glasgow, UK, 2000), pp. 522 thin film silicon solar cells: optical model," in 16th European Photovoltaic Solar Energy Conference

338

Influence of ITO-silver wire electrode structure on the performance of single-crystal silicon solar cells  

Science Conference Proceedings (OSTI)

This study aimed to explore the effect of various electrode forms on single-crystal silicon solar cells by changing their front and back electrode structures. The high light penetration depth of the Indium Tin Oxide (ITO) and the high conductivity of ...

Wern-Dare Jheng

2012-01-01T23:59:59.000Z

339

Definition: Solar cell | Open Energy Information  

Open Energy Info (EERE)

Solar cell Solar cell (Redirected from Definition:PV cell) Jump to: navigation, search Dictionary.png Solar cell Converts light into electrical energy. Traditional solar cells are made from silicon; second-generation solar cells (thin-film solar cells) are made from amorphous silicon or nonsilicon materials such as cadmium telluride; and third-generation solar cells are being made from variety of new materials, including solar inks, solar dyes, and conductive plastics.[1][2] View on Wikipedia Wikipedia Definition A solar cell (also called a photovoltaic cell) is an electrical device that converts the energy of light directly into electricity by the photovoltaic effect. It is a form of photoelectric cell (in that its electrical characteristics-e.g. current, voltage, or resistance-vary

340

Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems  

E-Print Network (OSTI)

21st European Photovoltaic Solar Energy Conference, Dresden,21st European Photovoltaic Solar Energy Conference, Dresden,International Energy Agency Photovoltaic Power System

Zhang, Teresa Weirui

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Microscopic Measurements of Electrical Potential in Hydrogenated Nanocrystalline Silicon Solar Cells: Preprint  

DOE Green Energy (OSTI)

We report on a direct measurement of electrical potential and field profiles across the n-i-p junction of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells, using the nanometer-resolution potential imaging technique of scanning Kelvin probe force microscopy (SKPFM). It was observed that the electric field is nonuniform across the i layer. It is much higher in the p/i region than in the middle and the n/i region, illustrating that the i layer is actually slightly n-type. A measurement on a nc-Si:H cell with a higher oxygen impurity concentration shows that the nonuniformity of the electric field is much more pronounced than in samples having a lower O impurity, indicating that O is an electron donor in nc-Si:H materials. This nonuniform distribution of electric field implies a mixture of diffusion and drift of carrier transport in the nc-Si:H solar cells. The composition and structure of these nc-Si:H cells were further investigated by using secondary-ion mass spectrometry and Raman spectroscopy, respectively. The effects of impurity and structural properties on the electrical potential distribution and solar cell performance are discussed.

Jiang, C. S.; Moutinho, H. R.; Reedy, R. C.; Al-Jassim, M. M.; Yan, B.; Yue, G.; Sivec, L.; Yang, J.; Guha, S.; Tong, X.

2012-04-01T23:59:59.000Z

342

Research on High-Bandgap Materials and Amorphous Silicon-Based Solar Cells, Final Technical Report, 15 May 1994-15 January 1998  

DOE Green Energy (OSTI)

This report describes work performed by Syracuse University under this subcontract. Researchers developed a technique based on electroabsorption measurements for obtaining quantitative estimates of the built-in potential Vbi in a-Si:H-based heterostructure solar cells incorporating microcrystalline or a-SiC:H p layers. Using this new electroabsorption technique, researchers confirmed previous estimates of Vbi {yields} 1.0 V in a-Si:H solar cells with ''conventional'' intrinsic layers and either microcrystalline or a-SiC:H p layers. Researchers also explored the recent claim that light-soaking of a-Si:H substantially changes the polarized electroabsorption associated with interband optical transitions (and hence, not defect transitions). Researchers confirmed measurements of improved (5') hole drift mobilities in some specially prepared a-Si:H samples. Disturbingly, solar cells made with such materials did not show improved efficiencies. Researchers significantly clarified the relationship of ambipolar diffusion-length measurements to hole drift mobilities in a-Si:H, and have shown that the photocapacitance measurements can be interpreted in terms of hole drift mobilities in amorphous silicon. They also completed a survey of thin BP:H and BPC:H films prepared by plasma deposition using phosphine, diborane, trimethylboron, and hydrogen as precursor gases.

Schiff, E. A.; Gu, Q.; Jiang, L.; Lyou, J.; Nurdjaja, I.; Rao, P. (Department of Physics, Syracuse University)

1998-12-28T23:59:59.000Z

343

Atmospheric performance of the special-purpose Solar Energy Research Institute (SERI) thin-airfoil family  

DOE Green Energy (OSTI)

The Solar Energy Research Institute (SERI), in cooperation with SeaWest Energy Group, has completed extensive atmospheric testing of the special-purpose SERI thin-airfoil family during the 1990 wind season. The purpose of this test program was to experimentally verify the predicted performance characteristics of the thin-airfoil family on a geometrically optimized blade, and to compare it to original-equipment blades under atmospheric wind conditions. The tests were run on two identical Micon 65/13 horizontal-axis wind turbines installed side-by-side in a wind farm. The thin-airfoil family 7.96 m blades were installed on one turbine, and AeroStar 7.41 m blades were installed on the other. This paper presents final performance results of the side-by-side comparative field test for both clean and dirty blade conditions. 7 refs., 11 figs., 1 tab.

Tangler, J; Smith, B; Jager, D; Olsen, T

1990-09-01T23:59:59.000Z

344

Processing and modeling issues for thin-film solar cell devices. Final report  

DOE Green Energy (OSTI)

During the third phase of the subcontract, IEC researchers have continued to provide the thin film PV community with greater depth of understanding and insight into a wide variety of issues including: the deposition and characterization of CuIn{sub 1-x}Ga{sub x}Se{sub 2}, a-Si, CdTe, CdS, and TCO thin films; the relationships between film and device properties; and the processing and analysis of thin film PV devices. This has been achieved through the systematic investigation of all aspects of film and device production and through the analysis and quantification of the reaction chemistries involved in thin film deposition. This methodology has led to controlled fabrications of 15% efficient CuIn{sub 1-x}Ga{sub x}Se{sub 2} solar cells over a wide range of Ga compositions, improved process control of the fabrication of 10% efficient a-Si solar cells, and reliable and generally applicable procedures for both contacting and doping films. Additional accomplishments are listed below.

Birkmire, R.W.; Phillips, J.E. [Univ. of Delaware, Newark, DE (United States). Institute of Energy Conversion

1997-11-01T23:59:59.000Z

345

Slicing of silicon into sheet material. Silicon sheet growth development for the large area silicon sheet task of the Low Cost Silicon Solar Array Project. Fifth quarterly report, March 21, 1977--May 27, 1977  

DOE Green Energy (OSTI)

The multiblade slurry technique capable of slicing 10 cm ingot into wafers 0.25 mm thick with only 0.20 mm kerf loss and 98% yield has been demonstrated. The total silicon requirement represents an ingot to sheet conversion of 0.95 m/sup 2//kg. Full production slicing tests have demonstrated the cost of MS slicing to contribute $40 to $50/m/sup 2/, with ''best effort'' estimates for today's configuration to be $30 to $35/m/sup 2/. By reducing material cost, and increasing the specific capacity of a saw to slice 900 wafers simultaneously, the long-term cost of MS slicing is estimated to be less than $10/m/sup 2/. The conversion of ingot to sheet is shown to be the most valuable contribution of slicing technology. At today's ingot costs, and with the thin wafer, low kerf loss slicing techniques demonstrated, the silicon material represents 5 to 10 times the cost of the wafering process in finished silicon wafers. Increasing the number of blades used in MS slicing from 100 to 150 to 225 to 300 has resulted in a reduction of yield to 33 to 70% for thin slicing, or an increase in wafer thickness to 0.30 mm slices. The limitation is intrinsic misalignment of multiple blades. A technique to correct this condition is presented and forms a key element in low cost slicing. Analysis of blade material accuracy shows that straightness and flatness specifications can be relaxed. The success of the blade alignment technique will allow lower thickness accuracy requirements. The goal is to use blade materials 50% as costly as used presently, reducing the cost of this expendible material.

Holden, S.C.; Fleming, J.R.

1977-07-07T23:59:59.000Z

346

SunShot Initiative: Thin Film Photovoltaics Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Film Photovoltaics Research Thin Film Photovoltaics Research to someone by E-mail Share SunShot Initiative: Thin Film Photovoltaics Research on Facebook Tweet about SunShot Initiative: Thin Film Photovoltaics Research on Twitter Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Google Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Delicious Rank SunShot Initiative: Thin Film Photovoltaics Research on Digg Find More places to share SunShot Initiative: Thin Film Photovoltaics Research on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Thin Film Photovoltaics Research The U.S. Department of Energy (DOE) supports research and development of

347

Eighth workshop on crystalline silicon solar cell materials and processes: Extended abstracts and papers  

DOE Green Energy (OSTI)

The theme of this workshop is Supporting the Transition to World Class Manufacturing. This workshop provides a forum for an informal exchange of information between researchers in the photovoltaic and non-photovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helps establish a knowledge base that can be used for improving device fabrication processes to enhance solar-cell performance and reduce cell costs. It also provides an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research. The workshop format features invited review presentations, panel discussions, and two poster sessions. The poster sessions create an opportunity for both university and industrial researchers to present their latest results and provide a natural forum for extended discussions and technical exchanges.

NONE

1998-08-01T23:59:59.000Z

348

Silicon solar cell process development, fabrication and analysis. Phase II. Annual report, 1 July 1979-30 June 1980  

DOE Green Energy (OSTI)

Solar cells were fabricated from EFG (RH) ribbons from multiple dies, silicon on ceramic (SOC), dendritic web, cast silicon by HEM, and semi-continuous CZ from both VARIAN and HAMCO. Baseline and improved solar cells were made from the sheets. Baseline solar cells processed in both Phase I and Phase II, involving cells from EFG, SOC, dendritic web, and HEM, indicated that no significant improvement in silicon sheet quality has been achieved in Phase II. Solar cells from semi-continuous CZ showed cell performance close to the conventional CZ control cells, although the cells from the semi-continuous CZ have shown wider performance range because of variation in crystalline perfection. Generally, process upgrading provided improvement in cell performance, the improvement depending on the process used and the quality of the sheet silicon. Study of the effect of grain size on solar cell performance suggested that the minimum grain size to make solar cells of 10% AMO efficiency is about 500 ..mu..m, which is expected to provide minimum module efficiency of 10% AMI. If other harmful impurities are added in the process of sheet growth, the minimum grain size must be increased. The BSF study showed that the higher the resistivity of the starting substrates, the greater the relative improvement in cell performance, probably because of greater shift in Fermi levels at the back L/H junction (pp+) and also because of the higher initial values of minority carrier diffusion length. This study also suggested that proper control of the back-surface field (BSF) process could minimize the junction shunting problems often introduced by the BSF processing.

Yoo, H.I.; Iles, P.A.; Ho, F.F.; Leung, D.C.

1980-01-01T23:59:59.000Z

349

Low-Cost Silicon Solar Array project (LSSA). Quarterly report, April 1976--June 1976  

DOE Green Energy (OSTI)

Activities and progress of the LSSA Project during April, May, and June 1976 are described. This involved the awarding of additional contracts, an evaluation and clarification of plans and working relationships with contractors, the receipt of initial technical results, and an expansion of activity in the evaluation and improvement of the solar cell modules that are included in the Project's first procurement (46 kilowatts). For the most part, the new manufacturing technology is being developed under contract by industries and universities. It includes the consideration of new silicon-refinement processes, silicon sheet-growth techniques, encapsulants, and automated-assembly production. During this report period analytical and experimental accomplishments resulted from day-to-day activities that are the early efforts of a long range plan. Thirty-one contracts have been awarded and two more are being negotiated. Five companies have delivered 20 kilowatts out of a total purchase of 46 kilowatts of ''off-the-shelf'' modules that will be used in ERDA's test and demonstration activities. The same five companies have just been awarded contracts for the purchase of 130 kilowatts of semistandardized modules at an average selling price of $15.50 per watt. (WDM)

Not Available

1976-10-08T23:59:59.000Z

350

High-efficiency one-sun photovoltaic module demonstration using solar-grade CZ silicon. Final report  

DOE Green Energy (OSTI)

This work was performed jointly by Sandia National Laboratories (Albuquerque, NM) and Siemens Solar Industries (Camarillo, CA) under a Cooperative Research and Development Agreement (CRADA 1248). The work covers the period May 1994 to March 1996. The purpose of the work was to explore the performance potential of commercial, photovoltaic-grade Czochralski (Cz) silicon, and to demonstrate this potential through fabrication of high-efficiency cells and a module. Fabrication of the module was omitted in order to pursue further development of advanced device structures. The work included investigation of response of the material to various fabrication processes, development of advanced cell structures using the commercial material, and investigation of the stability of Cz silicon solar cells. Some important achievements of this work include the following: post-diffusion oxidations were found to be a possible source of material contamination; bulk lifetimes around 75 pts were achieved; efficiencies of 17.6% and 15.7% were achieved for large-area cells using advanced cell structures (back-surface fields and emitter wrap-through); and preliminary investigations into photodegradation in Cz silicon solar cells found that oxygen thermal donors might be involved. Efficiencies around 20% should be possible with commercial, photovoltaic-grade silicon using properly optimized processes and device structures.

Gee, J.M.

1996-10-01T23:59:59.000Z

351

Structural Properties Studies of Zinc Oxide Thin Film Grown on Silicon Carbide by Means of X-ray Diffraction Technique  

Science Conference Proceedings (OSTI)

In this work, the structural properties of the zinc oxide (ZnO) thin film on silicon carbide (6H-SiC) grown by radio frequency sputtering technique are investigated thoroughly by means of X-ray diffraction (XRD) technique. Both conventional XRD phase analysis and rocking curve measurements are carried out in order to determine the crystalline structure and the crystalline quality of the ZnO sample. From the phase analysis, intense peaks correspond to ZnO(002), iC(006) and their multiple reflections, i.e. ZnO(004) and SiC(0012) are observed. This result suggests that the ZnO thin film is in wurzite structure. Through the simulation of XRD rocking curve of the ZnO(002) peak, the lattice mismatch of 5.49% is obtained.

Ching, C. G.; Ng, S. S.; Hassan, Z.; Hassan, H. Abu; Al-Hardan, N. H.; Abdullah, M. J. [Nano-optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800, Penang (Malaysia)

2011-03-30T23:59:59.000Z

352

Heat exchanger-ingot casting/slicing process. Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project. Eighth quarterly progress report, July 1, 1977--September 30, 1977  

DOE Green Energy (OSTI)

Graded crucibles have been developed which are dense enough to avoid penetration of the molten silicon and weak enough to fracture during the cool-down cycle. These crucibles have been used to cast crack-free silicon ingots up to 3.3 kg. Significant progress has been made in the crystallinity of the samples cast. Solar cells made from one of the ingots have yielded over 9% conversion efficiency. The source of silicon carbide in the cast silicon has been identified, both theoretically and experimentally, to be associated with the use of graphite retainers in contact with the crucible. Both 45 ..mu..m and 30 ..mu..m diamonds can be used for efficient slicing of silicon. Wafers sliced with 45 ..mu..m diamond plated wire show a surface roughness of +-0.5 ..mu..m and extent of damage of 3 ..mu..m. In an effort to avoid diamond pullout from impregnated wire it was found that a layer of 0.3 mil thick plating is sufficient to encapsulate the diamonds. A projected cost analysis has shown that the add-on cost of casting and slicing of silicon is $11.57 per square meter.

Schmid, F.; Khattak, C.P.

1977-10-01T23:59:59.000Z

353

Functional requirements for component films in a solar thin-film photovoltaic/thermal panel  

SciTech Connect

The functional requirements of the component films of a solar thin-film photovoltaic/thermal panel were considered. Particular emphasis was placed on the new functions, that each layer is required to perform, in addition to their pre-existing functions. The cut-off wavelength of the window layer, required for solar selectivity, can be achieved with charge carrier concentrations typical of photovoltaic devices, and thus does not compromise electrical efficiency. The upper (semiconductor) absorber layer has a sufficiently high thermal conductivity that there is negligible temperature difference across the film, and thus negligible loss in thermal performance. The lower (cermet) absorber layer can be fabricated with a high ceramic content, to maintain high solar selectivity, without significant increase in electrical resistance. A thin layer of molybdenum-based cermet at the top of this layer can provide an Ohmic contact to the upper absorber layer. A layer of aluminium nitride between the metal substrate and the back metal contact can provide electrical isolation to avoid short-circuiting of series-connected cells, while maintaining a thermal path to the metal substrate and heat extraction systems. Potential problems of differential contraction of heated films and substrates were identified, with a recommendation that fabrication processes, which avoid heating, are preferable. (author)

Johnston, David [Power and Energy Research Group, School of Engineering, Northumbria University, Ellison Place, Newcastle upon Tyne NE1 8ST (United Kingdom)

2010-03-15T23:59:59.000Z

354

Large-area Silicon-Film{trademark} panels and solar cells. Phase 2 technical report, January 1996--December 1996  

DOE Green Energy (OSTI)

The Silicon-Film{trademark} process is on an accelerated path to large-scale manufacturing. A key element in that development is optimizing the specific geometry of both the Silicon-Film{trademark} sheet and the resulting solar cell. That decision has been influenced by cost factors, engineering concerns, and marketing issues. The geometry investigation has focused first on sheet nominally 15 cm wide. This sheet generated solar cells with areas of 240 cm{sup 2} and 675 cm{sup 2}. Most recently, a new sheet fabrication machine was constructed that produces Silicon-Film{trademark} with a width in excess of 30 cm. Test results have indicated that there is no limit to the width of sheet generated by this process. The new wide material has led to prototype solar cells with areas of 300, 400, and 1,800 cm{sup 2}. Significant advances in solar-cell processing have been developed in support of fabricating large-area devices, including uniform emitter diffusion and anti-reflection coatings.

Rand, J.A.; Barnett, A.M.; Checchi, J.C.; Culik, J.S.; Collins, S.R.; Ford, D.H.; Hall, R.B.; Jackson, E.L.; Kendall, C.L. [AstroPower Inc., Newark, DE (United States)

1997-03-01T23:59:59.000Z

355

Thin Film Solar Cells Derived from Sintered Semiconductor Quantum Dots: Cooperative Research and Development Final Report, CRADA number CRD-07-00226  

Science Conference Proceedings (OSTI)

The NREL/Evident team will develop techniques to fabricate thin film solar cells where the absorption layers comprising the solar cells are derived from sintered semiconductor quantum dots.

Ginley, D. S.

2010-07-01T23:59:59.000Z

356

Large-area silicon-film{sup {trademark}} panels and solar cells. Phase I annual technical report, July 1, 1995--December 31, 1995  

DOE Green Energy (OSTI)

AstroPower is establishing a low cost manufacturing process for Silicon-Film{trademark} solar cells and panels by taking advantage of the continuous nature of the Silicon-Film{trademark} technology. Under this effort, each step used in Silicon-Film{trademark} panel fabrication is being developed into a continuous/in-line manufacturing process. The following benefits are expected: an accelerated reduction of PV manufacturing cost for installed systems; a foundation for significantly increased production capacity; and a reduction in handling and waste streams. The process development will be based on a new 31-cm wide continuous Silicon-Film{trademark} sheet. Long-term goals include the development of a 24W, 30 cm x 60 cm Silicon-Film{trademark} solar cell and a manufacturing capability for a 384W, 4 inches x 8 inches Silicon-Film{trademark} panel for deployment in utility-scale applications.

Rand, J.A.; Barnett, A.M.; Checchi, J.C.; Culik, J.S. [AstroPower, Inc., Solar Park, Newark, DE (United States)] [and others

1996-06-01T23:59:59.000Z

357

Photonic light-trapping versus Lambertian limits in thin film silicon  

E-Print Network (OSTI)

for solar-electric- and nuclear-power-generation, based on data from 12 photovoltaic (PV) companies;2005) material- and energy-inventories for solar technologies gathered from twelve U.S. and European PV companies, refining, purification), solar cell- and PV module- production, balance of system (BOS) production (e

358

Silicon materials task of the low cost solar array project (Phase III). Effect of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 1: characterization methods for impurities in silicon and impurity effects data base  

DOE Green Energy (OSTI)

The object of Phase III of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells. The study encompassed a variety of tasks including: (1) a detailed examination of thermal processing effects, such as HCl and POCl/sub 3/ gettering on impurity behavior, (2) completion of the data base and modeling for impurities in n-base silicon, (3) extension of the data base on p-type material to include elements likely to be introduced during the production, refining, or crystal growth of silicon, (4) effects on cell performance on anisotropic impurity distributions in large CZ crystals and silicon webs, and (5) a preliminary assessment of the permanence of the impurity effects. Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. For example, discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, and conventional solar cell I-V techniques, as well as descriptions of silicon chemical analysis are included. Considerable data are tabulated on the composition, electrical, and solar cell characteristics of impurity-doped silicon.

Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

1980-01-01T23:59:59.000Z

359

Influence of thin metal as a top electrode on the characteristics of P-I-N a- Si:H solar cells  

Science Conference Proceedings (OSTI)

Hydrogenated amorphous silicon (a-Si:H) p-n junction solar cells have been fabricated which utilize various metals (Cr, Cu, Al, Pd, Ag) as a top electrode. Experimental and theoretical analysis of photovolatic performance in a-Si:H solar cells as a function of resistivity, optical transmittance, and work function of thin metal films are presented. Metal work function changes the effective built-in potential of p-n junction diodes. Furthermore, a lower work function metal forms a good Ohmic contact for substrate --P/sup +/-I-N/sup +/-- electrode cells, and high work function metals improve V/sub oc/ of substrate -N-I-P cells. Typical V/sub o/c values are 760 mV with Cr--, Cu--, and Al--N-I-P--stainless steel (SS), 700 mV with Pd--N-I-P-SS, 600 mV with Pd--P-I-N-SS, and 540 mV with Cr--P-I-N-SS. J/sub sc/ is strongly dependent on transmittance and resistivity of the metal films. Fill factor is independent of the choice of a top electrode. An efficient of 2% has been obtained on a 2 cm/sup 2/ solar cell.

Han, M.; Anderson, W.A.; Lahri, R.; Coleman, J.

1981-04-01T23:59:59.000Z

360

CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments  

Office of Scientific and Technical Information (OSTI)

National Renewable Energy Laboratory National Renewable Energy Laboratory Innovation for Our Energy Future A national laboratory of the U.S. Department of Energy Office of Energy Efficiency & Renewable Energy NREL is operated by Midwest Research Institute ● Battelle Contract No. DE-AC36-99-GO10337 Conference Paper NREL/CP-520-37020 January 2005 CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments K. Ramanathan, R.N. Bhattacharya, M.A. Contreras, F.S. Hasoon, J. Abushama, and R. Noufi Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting October 25-28, 2004 Denver, Colorado NOTICE The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under Contract No. DE-AC36-99GO10337. Accordingly, the US

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361

Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint  

DOE Green Energy (OSTI)

It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

2011-07-01T23:59:59.000Z

362

Experimental Investigation of Size Effects on the Thermal Conductivity of Silicon-Germanium Alloy Thin Films  

E-Print Network (OSTI)

We experimentally investigate the role of size effects and boundary scattering on the thermal conductivity of silicon-germanium alloys. The thermal conductivities of a series of epitaxially grown Si[subscript 1-x] Ge[subscript ...

Cheaito, Ramez

363

CIGSS Thin Film Solar Cells: Final Subcontract Report, 10 October 2001-30 June 2005  

DOE Green Energy (OSTI)

This report describes the I-III-VI2 compounds that are developing into a promising material to meet the energy requirement of the world. CuInSe2 (CIS) and its alloy with Ga and S have shown long-term stability and highest conversion efficiency of 19.5%. Among the various ways of preparing CuIn1-xGaxSe2-ySy (CIGSS)/CdS thin-film solar cells, co-evaporation and sputtering techniques are the most promising. Sputtering is an established process for very high-throughput manufacturing. ARCO Solar, now Shell Solar, pioneered the work in CIS using the sputtering technique. The two-stage process developed by ARCO Solar involved sputtering of a copper and indium layer on molybdenum-coated glass as the first step. In the second step, the copper-indium layers were exposed to a selenium-bearing gas such as hydrogen selenide (H2Se) mixed with argon. The hydrogen selenide breaks down and leaves selenium, which reacts and mixes with the copper and indium in such a way to produce very high-quality CIS absorber layer. Sputtering technology has the added advantage of being easily scaled up and promotes roll-to-roll production on flexible substrates. Preliminary experiments were carried out. ZnO/ZnO:Al deposition by RF magnetron sputtering and CdS deposition by chemical-bath deposition are being carried out on a routine basis.

Dhere, N. G.

2006-02-01T23:59:59.000Z

364

High performance hydrogenated amorphous silicon solar cells made at a high deposition rate by glow discharge of disilane  

SciTech Connect

The deposition rate, electronic and optical properties of hydrogenated amorphous silicon films prepared from rf glow discharge decomposition of disilane (Si/sub 2/H/sub 6/) diluted in helium have been measured. These films show excellent electrical and optical properties and, most importantly, a high deposition rate coupled with satisfactory solar cell application was realized for the first time. At a deposition rate of 11 A/s, 5.47% and 6.5% conversion efficiencies were obtained with a first trial of n-i-p type solar cells deposited on SnO/sub 2//ITO glass and metal substrates, respectively.

Ohashi, Y.; Kenne, J.; Konagai, M.; Takahashi, K.

1983-06-15T23:59:59.000Z

365

Carbon, oxygen and their interaction with intrinsic point defects in solar silicon ribbon material. Annual report, September 1982-September 1983  

DOE Green Energy (OSTI)

This report first provides some background information on intrinsic point defects, and on carbon and oxygen in silicon in so far as it may be relevant for the efficiency of solar cells fabricated from EFG ribbon material. We discuss the co-precipitation of carbon and oxygen and especially of carbon and silicon self interstitials. A simple model for the electrical activity of carbon-self-interstitial agglomerates is presented. We assume that the self-interstitial content of these agglomerates determines their electrical activity and that both compressive stresses (high self-interstitial content) and tensile stresses (low self-interstitial content) give rise to electrical activity of the agglomerates. The self-interstitial content of these carbon-related agglomerates may be reduced by an appropriate high-temperature treatment and enhanced by a supersaturation of self-interstitials generated during formation of the p-n junction of solar cells. It is suggested that oxygen present in supersaturation in carbon-rich silicon may be induced to form SiO/sub 2/ precipitates by self-interstitials generated during phosphorus diffusion. It is proposed that the SiO/sub 2/-Si interface of the precipates gives rise to a continuum of donor states and that these interface states are responsible for at least part of the light-enhancement effects observed in oxygen containing EFG silicon after phosphorus diffusion.

Goesele, U.; Ast, D.G.

1983-10-01T23:59:59.000Z

366

Well-Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells: Preprint  

DOE Green Energy (OSTI)

We have developed hydrogenated amorphous silicon (a Si:H) back contacts to both p- and n-type silicon wafers, and employed them in double-heterojunction solar cells. These contacts are deposited entirely at low temperature (<250 C) and replace the standard diffused or alloyed back-surface-field contacts used in single-heterojunction (front-emitter only) cells. High-quality back contacts require excellent surface passivation, indicated by a low surface recombination velocity of minority-carriers (S) or a high open-circuit voltage (Voc). The back contact must also provide good conduction for majority carriers to the external circuit, as indicated by a high light I-V fill factor. We use hot-wire chemical vapor deposition (HWCVD) to grow a-Si:H layers for both the front emitters and back contacts. Our improved a-Si:H back contacts contribute to our recent achievement of a confirmed 18.2% efficiency in double-heterojunction silicon solar cells on p type textured silicon wafers.

Page, M. R.; Iwaniczko, E.; Xu, Y.; Wang, Q.; Yan, Y.; Roybal, L.; Branz, H. M.; Wang, T. H.

2006-05-01T23:59:59.000Z

367

Analysis of defects at the interface between high-k thin films and (100) silicon  

Science Conference Proceedings (OSTI)

Paramagnetic defects in atomic layer deposition grown aluminium oxide thin films have been studied using electron paramagnetic resonance. Initial spectra indicate the presence of Si-db, P"b"0 and P"b"1 defects, previously observed in Si/SiO"2 structures. ... Keywords: Aluminium oxide, Defects, EPR, High-k, Interfaces, Thin films

B. J. Jones; R. C. Barklie

2005-06-01T23:59:59.000Z

368

Definition: Solar cell | Open Energy Information  

Open Energy Info (EERE)

cell cell Jump to: navigation, search Dictionary.png Solar cell Converts light into electrical energy. Traditional solar cells are made from silicon; second-generation solar cells (thin-film solar cells) are made from amorphous silicon or nonsilicon materials such as cadmium telluride; and third-generation solar cells are being made from variety of new materials, including solar inks, solar dyes, and conductive plastics.[1][2] View on Wikipedia Wikipedia Definition A solar cell (also called a photovoltaic cell) is an electrical device that converts the energy of light directly into electricity by the photovoltaic effect. It is a form of photoelectric cell (in that its electrical characteristics-e.g. current, voltage, or resistance-vary when light is incident upon it) which, when exposed to light, can generate

369

Silicon Materials Task of the Low Cost Solar Array Project (part 2). Third quarterly report, 1 April 1976--30 June 1976  

DOE Green Energy (OSTI)

The objective of this program is to develop and define purity requirements for solar grade silicon by exploring the effects of metal impurities on the performance of terrestrial silicon solar cells. During this quarter the growth of all first, second, and nearly all third generation ingots was completed and the growth of fourth generation ingots was initiated. Several boron-doped silicon dendritic web baseline samples were grown as well as one web doped with chromium. Chemical analysis of the ingots is proceeding on schedule, though, as expected, difficulties in assessing the impurity levels of lightly-doped ingots have developed. Lifetime measurements were completed for all 38 ingots grown to date. (WDM)

Hopkins, R.H.; Davis, J.R.; Rai-Choudhury, P.; Blais, P.D.; McHugh, J.P.; McCormick, J.R.

1976-01-01T23:59:59.000Z

370

Silicon Materials Task of the Low Cost Solar Array Project (part 2). Second quarterly report, 1 January 1976--31 March 1976  

DOE Green Energy (OSTI)

The objective of this program, Part 2 of the Silicon Materials Task, is to develop and define purity requirements for solar cell grade silicon material by evaluating the effects of metal impurities and impurity concentration on the performance of terrestrial silicon solar cells. During this quarter the growth of all first generation doubly-doped Czochralski ingots was completed (baseline boron + Cr, Mn, Cu, Ni, Fe, Ti, V, Mg, Zn, Al, and Zr), as were 90 percent of the second generation ingots, several third generation ingots, and three multiply-doped (B + Cu/Mn, Cu/Cr, Mn/Cr) ingots. (WDM)

Hopkins, R.H.; Davis, J.R.; Rai-Choudhury, P.; Blais, P.D.

1976-01-01T23:59:59.000Z

371

Amorphous thin films for solar-cell applications. Final report, September 11, 1978-September 10, 1979  

Science Conference Proceedings (OSTI)

In Section II, Theoretical Modeling, theories for the capture of electrons by deep centers in hydrogenated amorphous silicon (a-Si:H) and for field-dependent quantum efficiency in a-Si:H are presented. In Section III, Deposition and Doping Studies, the optimization of phosphorus-doped a-Si:H carried out in four different discharge systems is described. Some details of the dc proximity and rf magnetron discharge systems are also provided. Preliminary mass spectroscopy studies of the rf magnetron discharge in both SiH/sub 4/ and SiF/sub 4/ are presented. In Section IV, Experimental Methods for Characterizing a-Si:H, recent work involving photoluminescence of fluorine-doped a-Si:H, photoconductivity spectra, the photoelectromagnetic effect, the photo-Hall effect and tunneling into a-Si:H is presented. Also, studies of the growth mechanism of Pt adsorbed on both crystalline Si and a-Si:H are described. Measurements of the surface photovoltage have been used to estimate the distribution of surface states of phosphorus-doped and undoped a-Si:H. Section V, Formation of Solar-Cell Structures, contains information on stacked or multiple-junction a-Si:H solar cells. In Section VI, Theoretical and Experimental Evaluation of Solar-Cell Parameters, an upper limit of approx. = 400 A is established for the hole diffusion length in undoped a-Si:H. A detailed description of carrier generation, recombination and transport in a-Si:H solar cells is given. Finally, some characteristics of Pd-Schottky-barrier cells are described for different processing histories.

Carlson, D E; Balberg, I; Crandall, R S; Goldstein, B C; Hanak, J J; Pankove, J I; Staebler, D L; Weakliem, H A; Williams, R

1980-02-01T23:59:59.000Z

372

Low Cost Solar Array Project: large area silicon sheet task. Silicon web process development. Quarterly report, October 1-December 31, 1979  

DOE Green Energy (OSTI)

Silicon dendritic web is a ribbon form of silicon which grows directly from the melt without dies and can produce solar cells with AM1 conversion efficiency over 15%. The primary objective of this program is to develop the technology to produce silicon web at a cost compatible with the national goal of 50 cents per peak watt (70 cents per watt in 1980$) of photovoltaic output power. During the period covered by this report the dominant activities were directed at developing methods to increase the period of simultaneous growth of web crystal with melt replenishment. To further this work, an adjustable thermal trimmer to dynamically balance the thermal loads during melt replenishment was designed and tested. The highlights of the concept and initial tests are described. Further studies of growth geometries to enhance web output rate were performed, the economic analysis for web growth was performed, and a potentially lower cost solid state power supply for the growth furnace was tested. Results are reported. (WHK)

Duncan, C.S.; Seidensticker, R.; Hopkins, R.H.; McHugh, J.P.; Hill, F.E.; Skutch, M.E.; Driggers, J.M.

1979-01-01T23:59:59.000Z

373

Research on the basic understanding of high efficiency in silicon solar cells. Annual report, 1 December 1982-30 November 1983  

DOE Green Energy (OSTI)

This report presents results of research designed to develop a basic understanding of high-efficiency silicon solar cells and achieve cell efficiencies greater than 17% by employing innovative concepts of material preparation, cell design, and fabrication technology. The research program consisted of a theoretical effort to develop models for very high-efficiency cell designs, experimental verification of the designs, and improved understanding of efficiency-limiting mechanisms such as heavy doping effects and bulk and surface recombination. Research was performed on high-lifetime float-zone silicon, the baseline materials, low-resistivity gallium-doped czochralski silicon, and boron-doped float-zone silicon.

Rohatgi, A.; Rai-Choudhury, P.

1984-09-01T23:59:59.000Z

374

Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint  

DOE Green Energy (OSTI)

We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

2012-06-01T23:59:59.000Z

375

Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint  

Science Conference Proceedings (OSTI)

We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

2012-06-01T23:59:59.000Z

376

Crystal Silicon Heterojunction Solar Cells by Hot-Wire CVD: Preprint  

DOE Green Energy (OSTI)

Hot-wire chemical vapor deposition (HWCVD) is a promising technique for fabricating Silicon heterojunction (SHJ) solar cells. In this paper we describe our efforts to increase the open circuit voltage (Voc) while improving the efficiency of these devices. On p-type c-Si float-zone wafers, we used a double heterojunction structure with an amorphous n/i contact to the top surface and an i/p contact to the back surface to obtain an open circuit voltage (Voc) of 679 mV in a 0.9 cm2 cell with an independently confirmed efficiency of 19.1%. This is the best reported performance for a cell of this configuration. We also made progress on p-type CZ wafers and achieved 18.7% independently confirmed efficiency with little degradation under prolong illumination. Our best Voc for a p-type SHJ cell is 0.688 V, which is close to the 691 mV we achieved for SHJ cells on n type c-Si wafers.

Wang, Q.; Page, M. R.; Iwaniczko, E.; Xu, Y. Q.; Roybal, L.; Bauer, R.; To, B.; Yuan, H. C.; Duda, A.; Yan, Y. F.

2008-05-01T23:59:59.000Z

377

Heat exchanger-ingot casting/slicing process. Silicon sheet growth development for the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project. Final report, Phase I, November 20, 1975--November 20, 1977  

DOE Green Energy (OSTI)

The proof of concept for silicon casting by the Heat Exchanger Method has been established. One of the major hurdles of ingot cracking has been eliminated with the development of graded crucibles. Such crucibles are compatible with the casting process in that the integrity of the container is maintained at high temperature; however, during the cool-down cycle the crucible fails, thereby leaving a crack-free boule. The controlled growth, heat-flow and cool-down has yielded silicon with a high degree of single crystallinity. Even when the seed melted out, very large grains formed. Solar cell samples made from cast material have yielded conversion efficiency of over 9% (AMI). Representative characterizations of silicon grown has demonstrated a dislocation density of less than 100/cm/sup 2/ and a minority carrier diffusion length of 31 ..mu..m. Excellent surface quality, i.e., surface smoothness and 3 to 5 ..mu..m surface damage, was achieved by multiple wire slicing with fixed diamond abrasive. To achieve this, the silicon workpiece was non-synchronously rocked to produce a radial cut profile and minimize wire contact length. Wire wander was reduced an order of magnitude over the original results by supporting and guiding the wires with grooved rollers. Commercially available impregnated wires that were used failed due to diamond pull-out. Plating after impregnation or electroplating diamonds directly on the core minimized diamond pull-out and corresponding loss in cutting effectiveness. Tungsten wire was the best core material tested because of its high strength, high Young's modulus, and resistance to hydrogen embrittlement. A lighter and longer blade carriage can be used for slicing with wire. This will allow the blade carriage to be reciprocated more rapidly to increase the surface speed. A projected add-on cost calculation shows that these methods will yield silicon for solar cell applications within ERDA/JPL cost goals.

Schmid, F; Khattak, C P

1977-12-01T23:59:59.000Z

378

NREL's Black Silicon Increases Solar Cell Efficiency by Reducing Reflected Sunlight (Fact Sheet)  

DOE Green Energy (OSTI)

A fact sheet detailing the R&D 100 Award-winning Black Silicon Nanocatalytic Wet-Chemical Etch technology.

Not Available

2010-11-01T23:59:59.000Z

379

Supporting Information Silicon Nanowire Radial p-n Junction Solar Cells  

E-Print Network (OSTI)

. The deposition temperature was 450º C with 100 sccm disilane as the silicon source gas, 5 sccm boron trichloride

Yang, Peidong

380

Feasibility of low-cost, high-volume production of silane and pyrolysis of silane to semiconductor-grade silicon. Quarterly progress report, April--June 1978. Low cost silicon solar array project  

DOE Green Energy (OSTI)

The purpose of the silane production program is to determine the feasibility and practicality of high-volume, low-cost production of silane (SiH/sub 4/) as an intermediate for obtaining solar-grade silicon metal. The process is based on the synthesis of SiH/sub 4/ by the catalytic disproportionation of chlorosilanes resulting from the reaction of hydrogen, metallurgical silicon, and silicon tetrachloride. The goal is to demonstrate the feasibility of a silane production cost of under $4.00/kg at a production rate of 1000 MT/year. The objective of the silicon production program is to establish the feasibility and cost of manufacturing semiconductor grade polycrystalline silicon through the pyrolysis of silane. The silane-to-silicon conversion is to be investigated in a fluid bed reactor and in a free space reactor. The process design program is to provide JPL with engineering and economic parameters for an experimental unit sized for 25 metric tons of silicon per year and a product-cost estimate for silicon produced on a scale of 100 metric tons per year. The purpose of the capacitive fluid-bed heating program is to explore the feasibility of using electrical capacitive heating to control the fluidized silicon-bed temperature during the heterogeneous decomposition of silane. In addition, a theoretical fluid-bed silicon deposition model was developed for use in the design of a fluid-bed pyrolysis scheme. Progress is reported in each of these areas. (WHK)

Breneman, W.C.; Farrier, E.G.; Morihara, H.

1978-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Solar cell array interconnects  

DOE Patents (OSTI)

Electrical interconnects are disclosed for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value. 4 figs.

Carey, P.G.; Thompson, J.B.; Colella, N.J.; Williams, K.A.

1995-11-14T23:59:59.000Z

382

Solar cell array interconnects  

DOE Patents (OSTI)

Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

Carey, Paul G. (Mountain View, CA); Thompson, Jesse B. (Brentwood, CA); Colella, Nicolas J. (Livermore, CA); Williams, Kenneth A. (Livermore, CA)

1995-01-01T23:59:59.000Z

383

Advanced processing technology for high-efficiency, thin-film CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, 1 March 1993--28 February 1994  

Science Conference Proceedings (OSTI)

This annual report details activities in research on advanced processing technology for high-effiency, thin-film solar cells.

Morel, D.L.; Ferekides, C.S. [University of South Florida, Tampa, FL (United States)

1994-07-01T23:59:59.000Z

384

Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium-tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells  

Science Conference Proceedings (OSTI)

In this article, Ga-doped Al-zinc-oxide (GAZO)/titanium-doped indium-tin-oxide (ITIO) bi-layer films were deposited onto glass substrates by direct current (dc) magnetron sputtering. The bottom ITIO film, with a thickness of 200 nm, was sputtered onto the glass substrate. The ITIO film was post-annealed at 350 deg. C for 10-120 min as a seed layer. The effect of post-annealing conditions on the morphologies, electrical, and optical properties of ITIO films was investigated. A GAZO layer with a thickness of 1200 nm was continuously sputtered onto the ITIO bottom layer. The results show that the properties of the GAZO/ITIO films were strongly dependent on the post-annealed conditions. The spectral haze (T{sub diffuse}/T{sub total}) of the GAZO/ITIO bi-layer films increases upon increasing the post-annealing time. The haze and resistivity of the GAZO/ITIO bi-layer films were improved with the post-annealed process. After optimizing the deposition and annealing parameters, the GAZO/ITIO bi-layer film has an average transmittance of 83.20% at the 400-800 nm wavelengths, a maximum haze of 16%, and the lowest resistivity of 1.04 x 10{sup -3}{Omega} cm. Finally, the GAZO/ITIO bi-layer films, as a front electrode for silicon-based thin film solar cells, obtained a maximum efficiency of 7.10%. These encouraging experimental results have potential applications in GAZO/ITIO bi-layer film deposition by in-line sputtering without the wet-etching process and enable the production of highly efficient, low-cost thin film solar cells.

Wang, Chao-Chun; Wuu, Dong-Sing; Lin, Yang-Shih; Lien, Shui-Yang; Huang, Yung-Chuan; Liu, Chueh-Yang; Chen, Chia-Fu; Nautiyal, Asheesh; Lee, Shuo-Jen [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Department of Materials Science and Engineering, MingDao University, Changhua 52345, Taiwan (China); Department of Mechanical Engineering, Yuan Ze University, Taoyuan 320, Taiwan (China)

2011-11-15T23:59:59.000Z

385

Phase I of the Automated Array Assembly Task of the Low Cost Silicon Solar Array Project. Technical quarterly report No. 2. Motorola report No. 2258/2  

SciTech Connect

Phase I of the Automated Array Assembly Task, LCSSAP, is concerned with a comprehensive assessment of the improvements in existing technology that may be needed in order to develop, by 1985, an industrial capability for low cost, mass production of very durable silicon solar photovoltaic modules and arrays. Both experimental, literature, and theoretical sources are being utilized to evaluate efficient solar cell design criteria and individual and synergistic process effects on the cost effective production and encapsulation of such efficient solar cells.

Coleman, M.

1976-07-01T23:59:59.000Z

386

Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Final technical report  

DOE Green Energy (OSTI)

Transparent conducting fluorine doped zinc oxide was deposited as thin films on soda lime glass substrates by atmospheric pressure chemical vapor deposition (CVD) at substrate temperatures of 460 to 500 degrees C. The precursors diethylzinc, tetramethylethylenediamine and benzoyl fluoride were dissolved in xylene. This solution was nebulized ultrasonically and then flash vaporized by a carrier gas of nitrogen preheated to 150 degrees C. Ethanol was vaporized separately, and these vapors were then mixed to form a homogeneous vapor mixture. Good reproducibility was achieved using this new CVD method. Uniform thicknesses were obtained by moving the heated glass substrates through the deposition zone. The best electrically and optical properties were obtained when the precursor solution was aged for more than a week before use. The films were polycrystalline and highly oriented with the c-axis perpendicular to the substrate. More than 90% of the incorporated fluorine atoms were electrically active as n-type dopants. The electrical resistivity of the films was as low as 5 x 10/sup -4/ Omega cm. The mobility was about 45 cm /Vs. The electron concentration was up to 3 x 10 %sup20;/cm. The optical absorption of the films was about 3-4% at a sheet resistance of 7 ohms/square. The diffuse transmittance was about 10% at a wavelength of 650 nm. Amorphous ilicon solar cells were deposited using the textured fluorine doped zinc oxide films as a front electrode. The short circuit current was increased over similar cells made with fluorine doped tin oxide, but the open circuit voltages and fill factors were reduced. The voltage was restored by overcoating the fluorine-doped zinc oxide with a thin layer of fluorine-doped tin oxide.

Gordon, R.G.; Kramer, K.; Liang, H.; Liu, X.; Pang, D.; Teff, D.

1998-09-01T23:59:59.000Z

387

N8, Design Principles for Light-Trapping in Thin Silicon Films with ...  

Science Conference Proceedings (OSTI)

Unfortunately, photon absorption in the near-infrared spectrum is very weak in .... on Polar, Nonpolar, and Semipolar GaN Orientations Grown by Ammonia MBE ..... Photoelectrode for Water Oxidation and in Photoelectrochemical Solar Cells.

388

Physical models of thin film polycrystalline solar cells based on measured grain-boundary and electronic-parameter properties. Quarterly report  

DOE Green Energy (OSTI)

Solar cells fabricated on polycrystalline silicon, either bulk or thin-film, can potentially be cost-effective when used in terrestrial photovoltaic energy-conversion systems. To achieve this goal, the polysilicon cell efficiency must be increased considerably from its present values. A severe limitation to the cell efficiency is due to the grain boundaries and their influence on carrier recombination. To remove this limitation, an understanding of the fundamental physics underlying the effects of the grain boundaries on cell performance is helpful. This fundamental physics is discussed, and models are developed for recombination currents in polysilicon pn-junction solar cells. Several analytic approximations, suggested by physical insight, are used and checked ultimately for self-consistency with the results of the analysis. The models are defined such that their parameters can be related directly to measurements, and the models are hence useful in interpreting experimental results. They also can be used to study, in a systematic way, cell-design modifications to improve the efficiency, e.g., grain-boundary passivation techniques.

Lindholm, F.A.; Fossum, J.G.; Holloway, P.A.; Neugroschel, A.

1979-12-01T23:59:59.000Z

389

New Opportunities in Crystalline Silicon R&D  

DOE Green Energy (OSTI)

To support the expected growth of the silicon solar cell industry, we believe that research and development (R&D) activities should be carried out in the following areas: polysilicon feedstock for the PV industry; thin-layer silicon deposition methods, and more environmentally benign cell and module manufacturing processes. For each of these activities, we identify the main issues that needed to be addressed.

Tsuo, Y. S.; Wang, T. H.; Ciszek, T. F. (National Renewable Energy Laboratory); Menna, P. (ENEA, Portici, Italy)

1998-10-06T23:59:59.000Z

390

NREL: Photovoltaics Research - Thin Film Photovoltaic Partnership Project  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed the United States to attain world leadership in this area of solar technology. Three national R&D teams focused on thin-film semiconductor materials: amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS) and its alloys. The Module Reliability Team and Environmental Health and Safety Team were crosscutting. The teams comprised researchers from the solar industry, academia, and NREL who focused their efforts on improving materials, devices, and manufacturing processes-all

391

Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

jobs. | Photo Courtesy of AE Polysilicon Factory Brings Solar Energy Jobs to Former Steel Town Solar films are manufactured at Precision Flow Technologies in Kingston, N.Y.,...

392

Silicon Film[trademark] photovoltaic manufacturing technology  

DOE Green Energy (OSTI)

This report describes work on a project to develop an advanced low-cost manufacturing process for a new utility-scale flatplate module based on thin active layers of polycrystalline silicon on a low-cost substrate. This is called the Silicon-Film[trademark] process. This new power module is based on a new large solar cell that is 675 cm[sup 2] in area. Eighteen of these solar cells form a 170-W module. Twelve ofthese modules form a 2-kW array. The program has three components: (1) development of a Silicon-Film[trademark] wafer machine that can manufacture wafer 675 cm[sup 2] in size with a total product cost reductionof 70%; (2) development of an advanced solar cell manufacturing process that will turn the Silicon-Film[trademark] wafer into a 14%-efficient solar cell; and (3) development of an advanced module design based on these large-area, efficient silicon solar cells with an average power of 170 watts. The completion of these three tasks will lead to a new power module designed for utility and other power applications with asubstantially lower cost.

Bottenberg, W.R.; Hall, R.B.; Jackson, E.L.; Lampo, S.; Mulligan, W.E.; Barnett, A.M. (AstroPower, Inc., Newark, DE (United States))

1993-04-01T23:59:59.000Z

393

NREL Core Program (NCPV), Session: Film Silicon (Presentation)  

DOE Green Energy (OSTI)

This project supports the Solar America Initiative by: R and D that contributes to goal of grid parity by 2015; research to fill the industry R and D pipeline for next-generation low-cost scalable products; development of industry collaborative research; and improvement of NREL tools and capabilities for film silicon research. The project addresses both parts of film silicon roadmap: (1) amorphous-silicon-based thin film PV--amorphous and nanocrystalline materials, present '2nd generation' technology, 4% of world PV sales in 2007; (2) advanced R and D toward film crystal silicon--definition, large-grained or single-crystal silicon < 100 {micro}m thick; 3-8 year horizon; and goal of reaching 15% cells at area costs approaching thin films.

Branz, H. M.

2008-04-01T23:59:59.000Z

394

Structur? Silicon Deposits Obtained by Electrolysis SiO2 in the ...  

Science Conference Proceedings (OSTI)

Symposium, Solar Cell Silicon ... On the Segregation of Impurities in Solar Silicon ... Silicon PV Wafers: Correlation of Mechanical Properties and Crack...

395

Dark Current Transients in Thin-Film CdTe Solar Cells: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the Dark current transients measured by changing the voltage bias in a stepwise fashion on CdTe cells results in minutes-long transients after each step. Transients measured at room temperature are controlled by carrier trapping that corresponds to the well known voltage transient phenomena[1]. Transients measured on the same CdTe cell at elevated temperature (60C and 90C) show a much slower decay process. We associate this physical process with''shunt'' current paths induced with reverse bias and removed with forward bias. A different back contact process may produce an opposite voltage dependence. The lack of these transients may be required for the fabrication of ''stable'' thin-film CdTe solar cells.

McMahon, T. J.

2002-05-01T23:59:59.000Z

396

CdS/CdTe Thin-Film Solar Cell with a Zinc Stannate Buffer Layer  

DOE Green Energy (OSTI)

This paper describes an improved CdS/CdTe polycrystalline thin-film solar-cell device structure that integrates a zinc stannate (Zn2SnO4 or ZTO) buffer layer between the transparent conductive oxide (TCO) layer and the CdS window layer. Zinc stannate films have a high bandgap, high transmittance, low absorptance, and low surface roughness. In addition, these films are chemically stable and exhibit higher resistivities that are roughly matched to that of the CdS window layer in the device structure. Preliminary device results have demonstrated that by integrating a ZTO buffer layer in both SnO2-based and Cd2SnO4 (CTO)-based CdS/CdTe devices, performance and reproducibility can be significantly enhanced

Wu, X.; Sheldon, P.; Mahathongdy, Y.; Ribelin, R.; Mason, A.; Moutinho, H. R.; Coutts, T. J.

1998-10-28T23:59:59.000Z

397

Has sempra found El Dorado in solar PVs? grid parity may now be within reach  

SciTech Connect

Instead of using conventional polycrystalline silicon modules that turn sunlight into electricity, these solar panels use cadmium telluride, a lower-cost semiconductor manufactured into thin-film cells that are cheaper to manufacture than their silicon-based counterparts. Electricity is being produced at costs as low as 7.5 {cents}/kWh.

NONE

2009-03-15T23:59:59.000Z

398

Research on polycrystalline thin-film CuGaInSe[sub 2] solar cells  

DOE Green Energy (OSTI)

This report describes research to fabricate high-efficiency CdZnS/CuInGaSe[sub 2] (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13% efficient, 1-cm[sup 2]-total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition: system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO//Cd[sub 0.82]Zn[sub 0.18]S/CuIn[sub 0.80]Ga[sub 0.20]Se[sub 2] cell that was verified at NREL under standard testing conditions at 13.1% efficiency with V[sub oc] = 0.581 V, J[sub sc] = 34.8 mA/cm[sup 2], FF = 0.728, and a cell area of 0.979 cm[sup 2].

Stanbery, B.J.; Chen, W.S.; Devaney, W.E.; Stewart, J.W. (Boeing Co., Seattle, WA (United States). Defense and Space Systems Group)

1992-11-01T23:59:59.000Z

399

The Effects of Damage on Hydrogen-Implant-Induced Thin-Film Separation from Bulk Silicon Carbide  

DOE Green Energy (OSTI)

Exfoliation of Sic by hydrogen implantation and subsequent annealing forms the basis for a thin-film separation process which, when combined with hydrophilic wafer bonding, can be exploited to produce silicon-carbide-on-insulator, SiCOI. Sic thin films produced by this process exhibit unacceptably high resistivity because defects generated by the implant neutralize electrical carriers. Separation occurs because of chemical interaction of hydrogen with dangling bonds within microvoids created by the implant, and physical stresses due to gas-pressure effects during post-implant anneal. Experimental results show that exfoliation of Sic is dependent upon the concentration of implanted hydrogen, but the damage generated by the implant approaches a point when exfoliation is, in fact, retarded. This is attributed to excessive damage at the projected range of the implant which inhibits physical processes of implant-induced cleaving. Damage is controlled independently of hydrogen dosage by elevating the temperature of the SiC during implant in order to promote dynamic annealing. The resulting decrease in damage is thought to promote growth of micro-cracks which form a continuous cleave. Channeled H{sup +} implantation enhances the cleaving process while simultaneously minimizing residual damage within the separated film. It is shown that high-temperature irradiation and channeling each reduces the hydrogen fluence required to affect separation of a thin film and results in a lower concentration of defects. This increases the potential for producing SiC01 which is sufficiently free of defects and, thus, more easily electrically activated.

Gregory, R.B.; Holland, O.W.; Thomas, D.K.; Wetteroth, T.A.; Wilson, S.R.

1999-04-05T23:59:59.000Z

400

Toward a Monolithic Lattice-Matched III-V on Silicon Tandem Solar Cell  

Science Conference Proceedings (OSTI)

A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated some of the key components toward realizing such a cell, including GaNPAs top cells grown on silicon substrates, GaP-based tunnel junctions grown on silicon substrates, and diffused silicon junctions formed during the epitaxial growth of GaNP on silicon. These components have required the development of techniques for the growth of high crystalline quality GaNPAs on silicon by metal-organic vapor-phase epitaxy.

Geisz, J. F.; Olson, J. M.; Friedman, D. J.

2004-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide  

DOE Patents (OSTI)

In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40.degree. and 70.degree. and preferably between 55.degree. and 65.degree. when the oxide is tin oxide and between 40.degree. and 70.degree. when the oxide deposited is indium tin oxide. gi The Government of the United States of America has rights in this invention pursuant to Department of Energy Contract No. EY-76-C-03-1283.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1979-01-01T23:59:59.000Z

402

Application of ITO/Al reflectors for increasing the efficiency of single-crystal silicon solar cells  

Science Conference Proceedings (OSTI)

It is shown that an increase in the efficiency and manufacturability of single-junction single-crystal silicon photoelectric converters of solar energy requires the use of a back-surface reflector based on conductive transparent indium-tin oxide (ITO) 0.25-2 {mu}m thick. To increase the efficiency and reduce the sensitivity to the angle of light incidence on the photoreceiving surface of multijunction photoelectric converters with vertical diode cells based on single-crystal silicon, ITO/Al reflectors with an ITO layer >1 {mu}m thick along vertical boundaries of diode cells should be fabricated. The experimental study of multijunction photoelectric converters with ITO/Al reflectors at diode cell boundaries shows the necessity of modernizing the used technology of ITO layers to achieve their theoretically calculated thickness.

Kopach, V. R.; Kirichenko, M. V., E-mail: kirichenko_mv@mail.ru; Khrypunov, G. S.; Zaitsev, R. V. [National Technical University, 'Kharkiv Poly technical Institute' (Ukraine)

2010-06-15T23:59:59.000Z

403

A statistical analysis of the effect of PECVD deposition parameters on surface and bulk recombination in silicon solar cells  

DOE Green Energy (OSTI)

We have performed a statistically designed multiparameter experiment using response surface methodology to determine the optimum deposition and anneal conditions for PECVD silicon-oxide and silicon-nitride films on Si solar cells. Our process includes a unique in situ hydrogen plasma treatment to promote bulk defect passivation independently of surface effects. Our goal has been to define a process to optimize cell performance by minimizing recombination while also providing an effective antireflection coating. Our initial results show that excellent emitter-surface passivation, approaching that of the best thermally grown oxides, can be obtained using a single-layer nitride coating whose refractive index is optimized for antireflection purposes. Use of the PECVD-nitride instead of a TiO{sub 2} ARC resulted in an 11% increase in output power.

Ruby, D.S. [Sandia National Labs., Albuquerque, NM (United States); Wilbanks, W.L.; Fleddermann, C.B. [Univ. of New Mexico, Albuquerque, NM (United States)

1995-01-01T23:59:59.000Z

404

High Volume Manufacturing of Silicon-Film Solar Cells and Modules; Final Subcontract Report, 26 February 2003 - 30 September 2003  

DOE Green Energy (OSTI)

The objective of the PV Manufacturing R&D subcontract was to continue to improve AstroPower's technology for manufacturing Silicon-Film* wafers, solar cells, and modules to reduce costs, and increase production yield, throughput, and capacity. As part of the effort, new technology such as the continuous back metallization screen-printing system and the laser scribing system were developed and implemented. Existing processes, such as the silicon nitride antireflection coating system and the fire-through process were optimized. Improvements were made to the statistical process control (SPC) systems of the major manufacturing processes: feedstock preparation, wafer growth, surface etch, diffusion, and the antireflection coating process. These process improvements and improved process control have led to an increase of 5% relative power, and nearly 15% relative improvement in mechanical and visual yield.

Rand, J. A.; Culik, J. S.

2005-10-01T23:59:59.000Z

405

Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

Mickelsen, R.A.; Chen, W.S.

1985-08-13T23:59:59.000Z

406

Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (1) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI[sub 2] chalcopyrite ternary materials which is vacuum deposited in a thin composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns ([approx equal]2.5[mu]m to [approx equal]5.0[mu]m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (2), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, is allowed.

Mickelsen, R.A.; Chen, W.S.

1982-06-15T23:59:59.000Z

407

Copper and Transparent-Conductor Reflectarray Elements on Thin-Film Solar Cell Panels  

E-Print Network (OSTI)

This work addresses the integration of reflectarray antennas (RA) on thin film Solar Cell (SC) panels, as a mean to save real estate, weight, or cost in platforms such as satellites or transportable autonomous antenna systems. Our goal is to design a good RA unit cell in terms of phase response and bandwidth, while simultaneously achieving high optical transparency and low microwave loss, to preserve good SC and RA energy efficiencies, respectively. Since there is a trade-off between the optical transparency and microwave surface conductivity of a conductor, here both standard copper and transparent conductors are considered. The results obtained at the unit cell level demonstrates the feasibility of integrating RA on a thin-film SC, preserving for the first time good performance in terms of both SC and RA efficiency. For instance, measurement at X-band demonstrate families of cells providing a phase range larger than 270{\\deg} with average microwave loss of -2.45dB (resp. -0.25dB) and average optical transpa...

Dreyer, Philippe; Nicolay, Sylvain; Ballif, Christophe; Perruisseau-Carrier, Julien

2013-01-01T23:59:59.000Z

408

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

1985-01-01T23:59:59.000Z

409

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

1982-01-01T23:59:59.000Z

410

Kinetic Model for Gaz-liquid Extraction of Boron from Solar Silicon  

Science Conference Proceedings (OSTI)

Abstract Scope, To predict the rate of purification of liquid silicon in liquid/gas ... A New Centrifuge CVD Reactor that will Challenge the Siemens Process.

411

Separation of Si and SiC Microparticles of Solar Grade Silicon ...  

Science Conference Proceedings (OSTI)

Various methods such as sedimentation, centrifugation, flotation have been ... Boron Removal from Silicon Melts by H2O/H2 Gas Blowing Gas-phase Mass...

412

Optimization of transparent and reflecting electrodes for amorphous-silicon solar cells. Final subcontract report, 1 May 1991--30 April 1994  

DOE Green Energy (OSTI)

Fluorine-doped zinc oxide was shown to have the lowest absorption loss of any of the known transparent conductors. An apparatus was constructed to deposit textured, transparent, conductive, fluorine-doped zinc oxide layers with uniform thickness over a 10 cm by 10 cm area, using inexpensive, high-productivity atmospheric pressure chemical vapor deposition. Amorphous silicon solar cells grown on these textured films show very high peak quantum efficiencies (over 90%). However, a significant contact resistance develops at the interface between the amorphous silicon and the zinc oxide. Transparent, conductive gallium-doped zinc oxide films were grown by APCVD at a low enough temperature (260{degree}C) to be deposited on amorphous silicon as a final conductive back contact to solar cells. A quantum-mechanical theory of bonding was developed and applied to some metal oxides; it forms a basis for understanding TCO structures and the stability of their interfaces with silicon.

Gordon, R.G.; Hu, J.; Lacks, D.; Musher, J.; Thornton, J.; Liang, H. [Harvard Univ., Cambridge, MA (United States)

1994-07-01T23:59:59.000Z

413

High-Efficiency CdTe and CIGS Thin-Film Solar Cells: Highlights and Challenges  

Science Conference Proceedings (OSTI)

Thin-film photovoltaic (PV) modules of CdTe and Cu(In,Ga)Se{sub 2} (CIGS) have the potential to reach cost-effective PV-generated electricity. These technologies have transitioned from the laboratory to the market place. Pilot production and first-time manufacturing are ramping up to higher capacity and enjoying a flood of venture-capital funding. CIGS solar cells and modules have achieved 19.5% and 13% efficiencies, respectively. Likewise, CdTe cells and modules have reached 16.5% and 10.2% efficiencies, respectively. Even higher efficiencies from the laboratory and from the manufacturing line are only a matter of time. Manufacturing-line yield continues to improve and is surpassing 85%. Long-term stability has been demonstrated for both technologies; however, some failures in the field have also been observed, emphasizing the critical need for understanding degradation mechanisms and packaging options. These two thin-film technologies have a common device/module structure: substrate, base electrode, absorber, junction layer, top electrode, patterning steps for monolithic integration, and encapsulation. The monolithic integration of thin-film solar cells can lead to significant manufacturing cost reduction compared to crystalline Si technology. The CdTe and CIGS modules share common structural elements. In principle, this commonality should lead to similar manufacturing cost per unit area, and thus, the module efficiency becomes the discriminating factor that determines the cost per watt. The long-term potential of the two technologies require R&D emphasis on science and engineering-based challenges to find solutions to achieve targeted cost-effective module performance, and in-field durability. Some of the challenges are common to both, e.g., in-situ process control and diagnostics, thinner absorber, understanding degradation mechanisms, protection from water vapor, and innovation in high-speed processing and module design. Other topics are specific to the technology, such as lower-cost and fast-deposition processes for CIGS, and improved back contact and voltage for CdTe devices.

Noufi, R.; Zweibel, K.

2006-01-01T23:59:59.000Z

414

Phase 2 of the automated array assembly task of the Low-Cost Silicon Solar Array Project. Annual report  

DOE Green Energy (OSTI)

This report presents the results of investigations and analyses of an advanced process sequence for manufacturing high efficiency solar cells and modules in a cost-effective manner. The entire process sequence is presented and discussed step by step. Emphasis is on process simplicity and minimizing consumed materials. The process sequence incorporates texture etching, plasma processes for damage removal and patterning, ion implantation, low pressure silicon nitride deposition, and plated metal. A reliable module design is presented. Specific process step developments are presnted. Further, a detailed cost analysis has been performed to indicate future areas of fruitful cost reduction effort. Finally, recommendations for advanced investigations are presented.

Coleman, M.G.; Grenon, L.P.; Pastirik, E.M.; Pryor, R.A.; Sparks, T.G.

1978-11-01T23:59:59.000Z

415

Hexagon solar power panel  

SciTech Connect

A solar energy panel comprises a support upon which silicon cells are arrayed. The cells are wafer thin and of two geometrical types, both of the same area and electrical rating, namely hexagon cells and hourglass cells. The hourglass cells are composites of half hexagons. A near perfect nesting relationship of the cells achieves a high density packing whereby optimum energy production per panel area is achieved.

Rubin, Irwin (Oxnard, CA)

1978-01-01T23:59:59.000Z

416

18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado  

DOE Green Energy (OSTI)

The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

Sopori, B. L.

2008-09-01T23:59:59.000Z

417

Slicing of silicon into sheet material. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project. Sixth quarterly report, June 18, 1977--September 18, 1977  

SciTech Connect

The ''Multiple Blade Alignment Device'' has been reported to JPL as a New Technology item, and is currently being reviewed for patent potential. The device has proven difficult to install on a blade package. Successful engagement of the device has resulted in an intrinsic parallelism of the ends of the package to within 3..mu.., compared to standard errors prior to correction of over 50..mu... Measurements of blade misalignment indicate an average runout of 50..mu.. in a 220 blade package. This compares well with predictions based on thickness variation measurements of blades and spacers. Early cutting tests with 0.15 mm blades and 10 cm diameter ingots show lower yield and accuracy and higher cutting speed than previous standard tests. This seems to be a result of effective high abrasive concentration on the blades as a result of the slurry application technique. A similar, more dramatic reduction of yield occurs with a thin slurry oil. This appears to occur by increased slurry transport to the blades and another effective increase of abrasive packing to the cutting region. Design of the large capacity MS saw is proceeding well, with a final conceptual design in progress. A flywheel system for work-piece drive is described. The design offers a practical conservative motion for the drive, requiring a minimum of power. 10 cm MS slices have been sent out for solar cell fabrication. 10 cm diameter and 2 cm square MS slices have been delivered for various surface preparations, and will be fabricated into cells and evaluated for performance. This will develop a minimum surface removal technique for both the damage and profiles peculiar to thin MS sices while allowing high efficiency cell production.

Holden, S.C.; Fleming, J.R.

1977-09-30T23:59:59.000Z

418

Slicing of silicon into sheet material. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project. Sixth quarterly report, June 18, 1977--September 18, 1977  

DOE Green Energy (OSTI)

The ''Multiple Blade Alignment Device'' has been reported to JPL as a New Technology item, and is currently being reviewed for patent potential. The device has proven difficult to install on a blade package. Successful engagement of the device has resulted in an intrinsic parallelism of the ends of the package to within 3..mu.., compared to standard errors prior to correction of over 50..mu... Measurements of blade misalignment indicate an average runout of 50..mu.. in a 220 blade package. This compares well with predictions based on thickness variation measurements of blades and spacers. Early cutting tests with 0.15 mm blades and 10 cm diameter ingots show lower yield and accuracy and higher cutting speed than previous standard tests. This seems to be a result of effective high abrasive concentration on the blades as a result of the slurry application technique. A similar, more dramatic reduction of yield occurs with a thin slurry oil. This appears to occur by increased slurry transport to the blades and another effective increase of abrasive packing to the cutting region. Design of the large capacity MS saw is proceeding well, with a final conceptual design in progress. A flywheel system for work-piece drive is described. The design offers a practical conservative motion for the drive, requiring a minimum of power. 10 cm MS slices have been sent out for solar cell fabrication. 10 cm diameter and 2 cm square MS slices have been delivered for various surface preparations, and will be fabricated into cells and evaluated for performance. This will develop a minimum surface removal technique for both the damage and profiles peculiar to thin MS sices while allowing high efficiency cell production.

Holden, S.C.; Fleming, J.R.

1977-09-30T23:59:59.000Z

419

Silicon materials task of the low cost solar array project(Phase III): effect of impurities and processing on silicon solar cells. Thirteenth quarterly report, October--December 1978  

DOE Green Energy (OSTI)

The objective of the program is to define the effects of impurities, various thermochemical processes and any impurity--process interactions on the performance of terrestrial silicon solar cells. Gettering experiments with phosphorus oxychloride gas phase treatments at 950/sup 0/C, 1000/sup 0/C, and 1150/sup 0/C have been completed for two Ti-doped ingots (3 x 10/sup 13/ cm/sup -3/ and 2.1 x 10/sup 14/ cm/sup -3/ Ti doping levels, respectively), two molybdenum doped ingots (8 x 10/sup 11/ and 4.2 x 10/sup 12/ cm/sup -3/ Mo) and one iron-doped ingot (3 x 10/sup 14/ cm/sup -3/ Fe). First generation Co and W-doped ingots were grown and processed to solar cells. Miniature solar cells and diodes were used to map the characteristics of wafers from a 3 inch diameter ingot doped with Mn or Ti. A model has been developed to describe the behavior of solar cells bearing non-uniform distributions of impurities or defects.

Hopkins, R.H.; Davis, J.R.; Blais, P.D.; Rohatgi, A.; Campbell, R.B.; Rai-Choudhury, P.; Mollenkopf, H.C.; McCormick, J.R.

1979-01-01T23:59:59.000Z

420

Comprehensive Model of Hydrogen Transport into a Solar Cell during Silicon Nitride Processing for Fire-Through Metallization  

DOE Green Energy (OSTI)

A mechanism for the transport of H into a Si solar cell during plasma-enhanced chemical vapor deposition (PECVD) of a hydrogenated silicon nitride (SiN:H) layer and its subsequent fire-through metallization process is described. The PECVD process generates process-induced traps, which ''store'' H at the surface of the solar cell. This stored H is released and diffuses rapidly into the bulk of Si during the high-temperature metallization-firing process. During the ramp-down, the diffused H associates with impurities and defects and passivates them. The firing step partially heals up the surface damage. The proposed model explains a variety of observations and experimental results.

Sopori, B.; Zhang, Y.; Reedy, R.; Jones, K.; Yan, Y.; Al-Jassim, M.; Bathey, B.; Kalejs, J.

2005-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films  

Science Conference Proceedings (OSTI)

In micro-/nanomachined devices and systems, aluminum nitride (AlN) thin films are widely used due to their piezoelectric properties. This work evaluates the potential of modifying the interface between the AlN thin film and the silicon (Si) wafer serving as bottom electrode for optimized crystallographic orientation and, hence, improved electrical and piezoelectric properties. The films were analyzed using temperature-dependant leakage current measurements, transmission electron microscopy, and x-ray diffraction. By preconditioning of the Si substrate surface applying sputter etching prior to film deposition, leakage current levels are substantially decreased and an increased (002) orientation of the AlN grains is observed.

Schneider, M.; Bittner, A.; Patocka, F.; Schmid, U. [Department for Microsystems Technology, Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse 7, A-1040 Vienna (Austria); Stoeger-Pollach, M. [University Service Center for Transmission Electron Microscopy (USTEM), Vienna University of Technology, Wiedner Hauptstrasse 8-10/052, 1040 Vienna (Austria); Halwax, E. [Institute of Chemical Technologies and Analytics, Vienna University of Technology, Getreidemarkt 9, A-1060 Vienna (Austria)

2012-11-26T23:59:59.000Z

422

Research on high-band-gap materials and amorphous-silicon-based solar cells. Annual subcontract report, May 15, 1994--May 14, 1995  

DOE Green Energy (OSTI)

We have conducted a survey of thin BP:H and BPC:H films prepared by plasma deposition using phosphine, diborane, tri-methylboron, and hydrogen as precursor gases. The objective of this research is to find out whether such films might offer a superior window layer film for application to wide bandgap a-Si solar cells. The research has shown good optical properties in a-BP:H films, but electrical properties acceptable for use in window layers have not been demonstrated yet. We have also found an interesting, conductive and transparent BPC:H film in a remote deposition region of the reactor, but have been unable to transfer deposition of this film to the standard interelectrode region. We have developed our capability to deposit nip sequence amorphous silicon based solar cells, and have demonstrated an open circuit voltage greater than 0.7 V. We have continued our studies of built-in potentials in a-Si based solar cells using the electroabsorption technique, extending our measurements to include cells with wider bandgap intrinsic layers and Schottky barrier test structures. We have made the first time-of-flight drift mobility measurements on a-Si:H prepared by hot wire (HW) deposition. Initial work has shown that light-soaked HW material can have much better ambipolar diffusion lengths than the plasma-deposited material following extended light soaking. We have performed some theoretical work which addresses a difficulty in understanding photocarrier recombination in a-Si:H first identified by Marvin Silver. In particular, electron-hole recombination is much slower than expected from the well-known {open_quotes}diffusion-controlled{close_quotes} models for Onsager (geminate) recombination and Langevin recombination. This slowness is essential to the success of a-Si in solar cells, but is unexplained. We have done work on high field electron drift mobilities in a-Si:H and on the validity of the Einstein relation connecting the diffusion and drift of holes in a-Si:H.

Schiff, E.A.; Gu, Q.; Jiang, L.; Wang, Q. [Syracuse Univ., NY (United States)

1995-12-01T23:59:59.000Z

423

Evaluation of Solar Grade Silicon Produced by the Institute of Physics and Technology: Cooperative Research and Development Final Report, CRADA Number CRD-07-211  

DOE Green Energy (OSTI)

NREL and Solar Power Industries will cooperate to evaluate technology for producing solar grade silicon from industrial waste of the phosphorus industry, as developed by the Institute of Physics and Technology (IPT), Kazakhstan. Evaluation will have a technical component to assess the material quality and a business component to assess the economics of the IPT process. The total amount of silicon produced by IPT is expected to be quite limited (50 kg), so evaluations will need to be done on relatively small quantities (? 5 kg/sample).

Page, M.

2013-02-01T23:59:59.000Z

424

Development of processes for the production of solar grade silicon from halides and alkali metals. First quarterly report, October 3-December 31, 1979  

DOE Green Energy (OSTI)

This program is directed toward the development of processes involving high temperature reactions of silicon halides with alkali metals for the production of solar grade silicon in volume at low cost. Experiments are being performed to evaluate product separation and collection processes, measure heat release parameters for scaling purposes, determine the effects of reactants and/or products on materials of reactor construction, and make preliminary engineering and economic analyses of a scaled-up process. Samples of the silicon product will be delivered to JPL for evaluation of solar cell performance. During this reporting period the silicon reactor test apparatus reached operational capabilities after a shutdown for two months. Several design improvements were made while returning it to an operational stage. During the initial series of experiments complete product separation of the silicon from the salt was achieved and small samples (approx. = 3 to 40 g) of fused silicon were collected. The test apparatus is now being operated on a routine basis for periods of about twenty minutes. Finally, the initial work began on the engineering and economic analysis for scale-up of the silicon production process.

Dickson, C.R.; Gould, R.K.

1980-02-01T23:59:59.000Z

425

Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing  

SciTech Connect

We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 {mu}m, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

Machida, Emi [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192 (Japan); Research Fellowships of the Japan Society for the Promotion of Science, Japan Society for the Promotion of Science, 1-8 Chiyoda, Tokyo 102-8472 (Japan); Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192 (Japan); Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332-0012 (Japan); Ikenoue, Hiroshi [Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka 819-0395 (Japan)

2012-12-17T23:59:59.000Z

426

Characterization of Amorphous Silicon Thin Films and PV Devices: Final Technical Report, January 1998 - October 2001  

DOE Green Energy (OSTI)

This report describes the most significant results of the three phases: (1) development of a second harmonic detection technique for electron spin resonance (ESR) and optically excited ESR (LESR) in a-Si:H and related alloys, (2) discovery of universal kinetics for the decay of optically excited electrons and holes in a-Si:H and related alloys at low temperatures, (3) first detection of optically excited band-tail electrons and holes in hydrogenated amorphous germanium (a-Ge:H), (4) first ESR study of the kinetics for the production of silicon dangling bonds in a-Si:H at low temperatures, and (5) determination from 1H NMR that there exists an order of magnitude more molecular hydrogen (H2) in a-Si:H than previously measured.

Taylor, P. C.

2002-03-01T23:59:59.000Z

427

17.1%-Efficient Multi-Scale-Textured Black Silicon Solar Cells without Dielectric Antireflection Coating: Preprint  

DOE Green Energy (OSTI)

In this work we present 17.1%-efficient p-type single crystal Si solar cells with a multi-scale-textured surface and no dielectric antireflection coating. Multi-scale texturing is achieved by a gold-nanoparticle-assisted nanoporous etch after conventional micron scale KOH-based pyramid texturing (pyramid black etching). By incorporating geometric enhancement of antireflection, this multi-scale texturing reduces the nanoporosity depth required to make silicon 'black' compared to nanoporous planar surfaces. As a result, it improves short-wavelength spectral response (blue response), previously one of the major limiting factors in 'black-Si' solar cells. With multi-scale texturing, the spectrum-weighted average reflectance from 350- to 1000-nm wavelength is below 2% with a 100-nm deep nanoporous layer. In comparison, roughly 250-nm deep nanopores are needed to achieve similar reflectance on planar surface. Here, we characterize surface morphology, reflectivity and solar cell performance of the multi-scale textured solar cells.

Toor, F.; Page, M. R.; Branz, H. M.; Yuan, H. C.

2011-07-01T23:59:59.000Z

428

Assembly and characterization of colloid-based antireflective coatings on multicrystalline silicon solar cells  

E-Print Network (OSTI)

the centerpoint of the solar cell samples. At that distance, the intensity of the light source was mapped, the light source employed for this study was less energetic than solar energy fluxes, which are in the rangeN-coated and uncoated solar cells. We also thank Greg Parsons for the use of a light meter, Dale Bachelor for assistance

Velev, Orlin D.

429

FIRST SOLAR CELLS ON SILICON RIBBONS OBTAINED BY FAST CVD FROM SILANE  

E-Print Network (OSTI)

.Rauber, Proc. 9th EC Photovoltaic Solar Energy Conf., Freiburg, RFA, 1989 [7] C.R Pinto, J.M.Serra, M.C.Brito, R. Gamboa, J. Maia Alves, A.M. Vallêra, Proc.21st European Photovoltaic Solar Energy Conference. Vallêra, Proc. 21st European Photovoltaic Solar Energy Conference and Exhibition, Dresden, 2006, p1064

Lisbon, University of

430

Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor  

E-Print Network (OSTI)

The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films deposited at low substrate temperature for devices such as thin film transistors (TFTs). The effect of the deposition parameters such as doping gas concentration, substrate temperature, hydrogen dilution, helium dilution, power density, and pressure at 50 kHz rf frequency on the films' characteristics were analyzed. The films' electrical property was characterized by its dark resistivity. The chemical composition and bonding characteristics were discussed. p-channel TFTs were fabricated with these optimized films. Three different levels of dopant concentrations in the channel were used to detect the dopant effect on the TFT properties. Doping resulted in the increase of film deposition rate. The low film deposition rate at the high temperature deposition corresponds to a dense structured film. The increase of gas phase H? concentration could increase H? etching of the weak bonds in the film, which is consistent with the decrease of the deposition rate. Film's dark conductivity is determined by the atomic B concentration in the film, the substrate temperature, the ion bombardment effect, the surface morphology, and the gas phase and film hydrogen concentration. At high power density and high pressure plasma condition, film with a high deposition rate shows a high conductivity. However, excessive ion bombardment effect, e.g. in powdery plasma region, limits the further increase of the conductivity. Film deposited with He dilution demonstrates a higher conductivity compared to the H? dilution counterpart. This might be attributed to a more effective ion bombardment effect of the former. Powder generation in the plasma significantly affects the conductivity of He diluted film compared to the H? diluted ones, which might be due to the less H? etching effect at the He dilution deposition. The output and transfer characteristics show the normal p-channel TFTs behavior. TFT characteristics, such as mobility, threshold voltage, and on-off current ratio were affected by the doping gas concentration in the channel layer and the deposition process.

Nominanda, Helinda

2004-01-01T23:59:59.000Z

431

Thin Solid Films 430 (2003) 125129 0040-6090/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved.  

E-Print Network (OSTI)

for a-Si:H solar cell fabrication. In addition to photovoltaic applications, a-Si:H is also used of amorphous silicon (a-Si:H)-based photovoltaic devices, it is important to deposit high- quality a progress has been made in hydrogenated amorphous silicon (a-Si:H)-based thin film photovoltaic devices

Deng, Xunming

432

SunShot Initiative: Crystalline Silicon Photovoltaics Research  

NLE Websites -- All DOE Office Websites (Extended Search)

silicon PV cells are the most common solar cells used in commercially available solar panels, representing 87% of world PV cell market sales in 2011. Crystalline silicon...

433

Indium phosphide/cadmium sulfide thin-film solar cells. Semiannual report, July 1980-December 1980  

DOE Green Energy (OSTI)

InP thin films were deposited by planar reactive deposition on recyrstallized CdS (RXCdS) and semi-insulating (100) InP substrates and evaluated as potential layers for an all-thin-film solar cell. Films prepared on RXCdS at approximately 330/sup 0/C contained a mixture of grains having both large and submicron lateral dimensions. SIMS analysis showed the interdiffusion profiles to be well behaved and, within the resolution of the analysis, no significant difference in the profiles between structures prepared at 330/sup 0/C and 380/sup 0/C. Be-doped epitaxial films, deposited on semi-insulating InP at 330/sup 0/C, showed both n- and p-type behavior. Films prepared at higher and lower temperatures with a freshly Be-charged In source were p-type and n-type, respectively; the n-type behavior is associated with an excess of n-type native defects. SIMS analyses confirmed the presence of Be in all Be-doped films. Growth with deviation from stoichiometry was initiated at 330/sup 0/C to reduce the concentration of native defects. Growth of Be-doped films at higher substrate temperature with the same Be-doped source after several runs eventually resulted in n-type films. Analyses of the In source and films were initiated to determine the cause of the transient doping. As an alternative to Be doping, p-type Zn-doped InP films were prepared on InP semi-insulating substrates with room-temperature carrier concentration and mobilities of 6 x 10/sup 16/ cm/sup -3/, and 80 cm/sup 2//Vsec, respectively.

Zanio, K.

1981-03-01T23:59:59.000Z

434

SunShot Initiative: Dye-Sensitized Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Dye-Sensitized Solar Cells to Dye-Sensitized Solar Cells to someone by E-mail Share SunShot Initiative: Dye-Sensitized Solar Cells on Facebook Tweet about SunShot Initiative: Dye-Sensitized Solar Cells on Twitter Bookmark SunShot Initiative: Dye-Sensitized Solar Cells on Google Bookmark SunShot Initiative: Dye-Sensitized Solar Cells on Delicious Rank SunShot Initiative: Dye-Sensitized Solar Cells on Digg Find More places to share SunShot Initiative: Dye-Sensitized Solar Cells on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Dye-Sensitized Solar Cells Graphic showing the seven layers of a dye-sensitized PV cell: electrode, hole conductor, dope, TiO2, blocking layer, transparent conductive oxide, and glass.

435

The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer.  

SciTech Connect

The unique combination of thermo-mechanical and physiochemical properties of silicon carbide (SiC) provides interest and opportunity for its use in nuclear applications. One of the applications of SiC is as a very thin layer in the TRi-ISOtropic (TRISO) coated fuel particles for high temperature gas reactors (HTGRs). This SiC layer, produced by chemical vapor deposition (CVD), is designed to withstand the pressures of fission and transmutation product gases in a high temperature, radiation environment. Various researchers have demonstrated that macroscopic properties can be affected by changes in the distribution of grain boundary plane orientations and misorientations [1 - 3]. Additionally, various researchers have attributed the release behavior of Ag through the SiC layer as a grain boundary diffusion phenomenon [4 - 6]; further highlighting the importance of understanding the actual grain characteristics of the SiC layer. Both historic HTGR fission product release studies and recent experiments at Idaho National Laboratory (INL) [7] have shown that the release of Ag-110m is strongly temperature dependent. Although the maximum normal operating fuel temperature of a HTGR design is in the range of 1000-1250C, the temperature may reach 1600C under postulated accident conditions. The aim of this specific study is therefore to determine the magnitude of temperature dependence on SiC grain characteristics, expanding upon initial studies by Van Rooyen et al, [8; 9].

Isabella J van Rooyen; Philippus M van Rooyen; Mary Lou Dunzik-Gougar

2013-08-01T23:59:59.000Z

436

Processing and modeling issues for thin-film solar cell devices. Annual subcontract report, January 16, 1993--January 15, 1994  

DOE Green Energy (OSTI)

The overall objective of the research presented in this report is to advance the development and acceptance of thin-film photovoltaic modules by increasing the understanding of film growth and processing and its relationship to materials properties and solar cell performance. The specific means toward meeting this larger goal include: (1) investigating scalable, cost-effective deposition processes; (2) preparing thin-film materials and device layers and completed cell structures; (3) performing detailed material and device analysis; and (4) participating in collaborative research efforts that address the needs of PV-manufacturers. These objectives are being pursued with CuInSe{sub 2}, CdTe and a-Si based solar cells.

Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Hegedus, S.S.; McCandless, B.E.; Shafarman, W.N.; Yokimcus, T.A. [Institute of Energy Conversion, Newark, DE (United States)

1994-09-01T23:59:59.000Z