Sample records for thin silicon solar

  1. Efficient light trapping structure in thin film silicon solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

  2. Anti-reflection zinc oxide nanocones for higher efficiency thin-film silicon solar cells

    E-Print Network [OSTI]

    Mailoa, Jonathan P

    2012-01-01T23:59:59.000Z

    Thin film silicon solar cells, which are commonly made from microcrystalline silicon ([mu]c-Si) or amorphous silicon (a-Si), have been considered inexpensive alternatives to thick polycrystalline silicon (polysilicon) solar ...

  3. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, Theodore F. (Evergreen, CO)

    1995-01-01T23:59:59.000Z

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

  4. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, T.F.

    1995-03-28T23:59:59.000Z

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

  5. CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION

    E-Print Network [OSTI]

    . An industrial exploitation of these properties for solar cell production currently lacks of a cost effectiveCRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer

  6. Enabling Thin Silicon Solar Cell Technology

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    effort to shift U.S. energy reliance from fossil fuels to renewable sources has spurred companies to reduce the cost and increase the reliability of their solar photovoltaics...

  7. Silicon epitaxy below 200C: Towards thin crystalline solar cells R. Carioua,b

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Silicon epitaxy below 200°C: Towards thin crystalline solar cells R. Carioua,b , R. Ruggeria,c , P spectroscopic ellipsometry and HRTEM measurements. Moreover, we build heterojunction solar cells with intrinsic of current devices. KEYWORDS Silicon epitaxy, RF-PECVD, low temperature, thin crystalline solar cells

  8. Extended light scattering model incorporating coherence for thin-film silicon solar cells

    E-Print Network [OSTI]

    Lenstra, Arjen K.

    Extended light scattering model incorporating coherence for thin-film silicon solar cells Thomas film solar cells. The model integrates coherent light propagation in thin layers with a direct, non efficiency spectra of state-of-the-art microcrystalline silicon solar cells. The simulations agree very well

  9. High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

    SciTech Connect (OSTI)

    Antoniadis, H.

    2011-03-01T23:59:59.000Z

    Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

  10. Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell

    E-Print Network [OSTI]

    to bring down the cost of photovoltaic (PV) solar cells has gained huge momentum, and many strategiesOptimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic

  11. Efficient Light Trapping in Inverted Nanopyramid Thin Crystalline Silicon Membranes for Solar Cell Applications

    E-Print Network [OSTI]

    Mavrokefalos, Anastassios

    Thin-film crystalline silicon (c-Si) solar cells with light-trapping structures can enhance light absorption within the semiconductor absorber layer and reduce material usage. Here we demonstrate that an inverted nanopyramid ...

  12. Thermodynamic limits of nanophotonic light trapping in thin film silicon solar cells1

    E-Print Network [OSTI]

    Schiff, Eric A.

    with solar tracking may realize the predicted JSC improvement. PACS Nos.: 88.40.jj, 42.79.Dj, 88.05.De to a significant improvement in light-trapping for cells used with solar trackingARTICLE Thermodynamic limits of nanophotonic light trapping in thin film silicon solar cells1 Brian

  13. Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations

    E-Print Network [OSTI]

    important evaluation criterion for photovoltaic (PV) technology. Therefore, research on novel structuresTowards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping February 2014; published online 3 March 2014) Thin-film solar cells based on silicon have emerged

  14. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    SciTech Connect (OSTI)

    Kumar, A.; Ravi, K. V.

    2011-06-01T23:59:59.000Z

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  15. A Review of Thin Film Crystalline Silicon for Solar Cell Applications. Part 1 : Native Substrates.

    E-Print Network [OSTI]

    A Review of Thin Film Crystalline Silicon for Solar Cell Applications. Part 1 : Native Substrates. Michelle J. Mc Cann, Kylie R. Catchpole, Klaus J. Weber and Andrew W. Blakers Centre for Sustainable Energy Systems Engineering Department, The Australian National University, ACT 0200, Australia. Email : michelle

  16. Towards the efficiency limits of silicon solar cells: how thin is too thin?

    E-Print Network [OSTI]

    Kowalczewski, Piotr

    2015-01-01T23:59:59.000Z

    It is currently possible to fabricate crystalline silicon solar cells with the absorber thickness ranging from a few hundreds of micrometers (conventional wafer-based cells) to devices as thin as $1\\,\\mu\\mathrm{m}$. In this work, we use a model single-junction solar cell to calculate the limits of energy conversion efficiency and estimate the optimal absorber thickness. The limiting efficiency for cells in the thickness range between 40 and $500\\,\\mu\\mathrm{m}$ is very similar and close to 29%. In this regard, we argue that decreasing the thickness below around $40\\,\\mu\\mathrm{m}$ is counter-productive, as it significantly reduces the maximum achievable efficiency, even when optimal light trapping is implemented. We analyse the roles of incomplete light trapping and extrinsic (bulk and surface) recombination mechanisms. For a reasonably high material quality, consistent with present-day fabrication techniques, the optimal thickness is always higher than a few tens of micrometers. We identify incomplete light ...

  17. Light Trapping for Thin Silicon Solar Cells by Femtosecond Laser Texturing: Preprint

    SciTech Connect (OSTI)

    Lee, B. G.; Lin, Y. T.; Sher, M. J.; Mazur, E.; Branz, H. M.

    2012-06-01T23:59:59.000Z

    Femtosecond laser texturing is used to create nano- to micron-scale surface roughness that strongly enhances light-trapping in thin crystalline silicon solar cells. Light trapping is crucial for thin solar cells where a single light-pass through the absorber is insufficient to capture the weakly absorbed red and near-infrared photons, especially with an indirect-gap semiconductor absorber layer such as crystalline Si which is less than 20 um thick. We achieve enhancement of the optical absorption from light-trapping that approaches the Yablonovitch limit.

  18. Low-cost, deterministic quasi-periodic photonic structures for light trapping in thin film silicon solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    Light trapping has been an important issue for thin film silicon solar cells because of the low absorption coefficient in the near infrared range. In this paper, we present a photonic structure which combines anodic aluminum ...

  19. Investigation of porous alumina as a self-assembled diffractive element to facilitate light trapping in thin film silicon solar cells

    E-Print Network [OSTI]

    Coronel, Naomi (Naomi Cristina)

    2009-01-01T23:59:59.000Z

    Thin film solar cells are currently being investigated as an affordable alternative energy source because of the reduced material cost. However, these devices suffer from low efficiencies, compared to silicon wafer solar ...

  20. Micrometer-Thin Crystalline-Silicon Solar Cells Integrating Numerically Optimized 2-D Photonic Crystals

    E-Print Network [OSTI]

    Depauw, V; Daif, O El; Gomard, G; Lalouat, L; Drouard, E; Trompoukis, C; Fave, A; Seassal, C; Gordon, I

    2013-01-01T23:59:59.000Z

    A 2-D photonic crystal was integrated experimentally into a thin-film crystalline-silicon solar cell of 1-{\\mu}m thickness, after numerical optimization maximizing light absorption in the active material. The photonic crystal boosted the short-circuit current of the cell, but it also damaged its open-circuit voltage and fill factor, which led to an overall decrease in performances. Comparisons between modeled and actual optical behaviors of the cell, and between ideal and actual morphologies, show the global robustness of the nanostructure to experimental deviations, but its particular sensitivity to the conformality of the top coatings and the spread in pattern dimensions, which should not be neglected in the optical model. As for the electrical behavior, the measured internal quantum efficiency shows the strong parasitic absorptions from the transparent conductive oxide and from the back-reflector, as well as the negative impact of the nanopattern on surface passivation. Our exemplifying case, thus, illustr...

  1. High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing

    E-Print Network [OSTI]

    Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

    2008-01-01T23:59:59.000Z

    One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

  2. Development of Commercial Technology for Thin Film Silicon Solar Cells on Glass: Cooperative Research and Development Final Report, CRADA Number CRD-07-209

    SciTech Connect (OSTI)

    Sopori, B.

    2013-03-01T23:59:59.000Z

    NREL has conducted basic research relating to high efficiency, low cost, thin film silicon solar cell design and the method of making solar cells. Two patents have been issued to NREL in the above field. In addition, specific process and metrology tools have been developed by NREL. Applied Optical Sciences Corp. (AOS) has expertise in the manufacture of solar cells and has developed its own unique concentrator technology. AOS wants to complement its solar cell expertise and its concentrator technology by manufacturing flat panel thin film silicon solar cell panels. AOS wants to take NREL's research to the next level, using it to develop commercially viable flat pane, thin film silicon solar cell panels. Such a development in equipment, process, and metrology will likely produce the lowest cost solar cell technology for both commercial and residential use. NREL's fundamental research capability and AOS's technology and industrial background are complementary to achieve this product development.

  3. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01T23:59:59.000Z

    Monocrystalline silicon solar cells, polycrystalline silicon solar cells, and amorphous silicon (thin-film) solar

  4. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01T23:59:59.000Z

    of a p-i-n thin-film solar cell with front transparent con-for thin-film a-si:h solar cells. Progress in Photovoltaics,in thin-film silicon solar cells. Optics Communications,

  5. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01T23:59:59.000Z

    Solar Energy Materials and Solar Cells, 86:207216, 2005. [silicon thin films and solar cells. Journal of Appliedof a p-i-n thin-film solar cell with front transparent con-

  6. Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013

    SciTech Connect (OSTI)

    Ravi, T. S.

    2013-05-01T23:59:59.000Z

    Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

  7. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, John W. (Albuquerque, NM)

    1994-01-01T23:59:59.000Z

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

  8. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, J.W.

    1994-01-11T23:59:59.000Z

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

  9. Angular behavior of the absorption limit in thin film silicon solar cells

    E-Print Network [OSTI]

    Naqavi, Ali; Sderstrm, Karin; Battaglia, Corsin; Paeder, Vincent; Scharf, Toralf; Herzig, Hans Peter; Ballif, Christophe

    2013-01-01T23:59:59.000Z

    We investigate the angular behavior of the upper bound of absorption provided by the guided modes in thin film solar cells. We show that the 4n^2 limit can be potentially exceeded in a wide angular and wavelength range using two-dimensional periodic thin film structures. Two models are used to estimate the absorption enhancement; in the first one, we apply the periodicity condition along the thickness of the thin film structure but in the second one, we consider imperfect confinement of the wave to the device. To extract the guided modes, we use an automatized procedure which is established in this work. Through examples, we show that from the optical point of view, thin film structures have a high potential to be improved by changing their shape. Also, we discuss the nature of different optical resonances which can be potentially used to enhance light trapping in the solar cell. We investigate the two different polarization directions for one-dimensional gratings and we show that the transverse magnetic pola...

  10. Development of Thin Film Silicon Solar Cell Using Inkjet Printed Silicon and Other Inkjet Processes: Cooperative Research and Development Final Report, CRADA Number CRD-07-260

    SciTech Connect (OSTI)

    Sopori, B.

    2012-04-01T23:59:59.000Z

    The cost of silicon photovoltaics (Si-PV) can be greatly lowered by developing thin-film crystalline Si solar cells on glass or an equally lower cost substrate. Typically, Si film is deposited by thermal evaporation, plasma enhanced chemical vapor deposition, and sputtering. NREL and Silexos have worked under a CRADA to develop technology to make very low cost solar cells using liquid organic precursors. Typically, cyclopentasilane (CPS) is deposited on a glass substrate and then converted into an a-Si film by UV polymerization followed by low-temperature optical process that crystallizes the amorphous layer. This technique promises to be a very low cost approach for making a Si film.

  11. Core-Shell Nanopillar Array Solar Cells using Cadmium Sulfide Coating on Indium Phosphide Nanopillars

    E-Print Network [OSTI]

    Tu, Bor-An Clayton

    2013-01-01T23:59:59.000Z

    Monocrystalline silicon solar cells, polycrystalline silicon solar cells, and amorphous silicon (thin-film)

  12. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006

    SciTech Connect (OSTI)

    Wohlgemuth, J.; Narayanan, M.

    2006-07-01T23:59:59.000Z

    The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

  13. Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells

    E-Print Network [OSTI]

    Deceglie, Michael G.

    2014-01-01T23:59:59.000Z

    silicon thin film solar cells," Solar Energy, vol. 77, pp.nano-crystalline silicon nip solar cells," Solar EnergyMaterials and Solar Cells, vol. 93, pp. H. Sakai, T.

  14. Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications

    SciTech Connect (OSTI)

    Theodorakos, I.; Zergioti, I.; Tsoukalas, D.; Raptis, Y. S., E-mail: yraptis@central.ntua.gr [Physics Department, National Technical University of Athens, Heroon Polytechniou 9, 15780 Zographou, Athens (Greece); Vamvakas, V. [Heliosphera SA, Industrial Area of Tripolis, 8th Building Block, 5th Road, GR-221 00 Tripolis (Greece)

    2014-01-28T23:59:59.000Z

    In this work, a picosecond diode pumped solid state laser and a nanosecond Nd:YAG laser have been used for the annealing and the partial nano-crystallization of an amorphous silicon layer. These experiments were conducted as an alternative/complementary to plasma-enhanced chemical vapor deposition method for fabrication of micromorph tandem solar cell. The laser experimental work was combined with simulations of the annealing process, in terms of temperature distribution evolution, in order to predetermine the optimum annealing conditions. The annealed material was studied, as a function of several annealing parameters (wavelength, pulse duration, fluence), as far as it concerns its structural properties, by X-ray diffraction, SEM, and micro-Raman techniques.

  15. amorphous-nanocrystalline silicon thin: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for manufacturing high...

  16. Optimal design of one-dimensional photonic crystal back reflectors for thin-film silicon solar cells

    SciTech Connect (OSTI)

    Chen, Peizhuan; Hou, Guofu, E-mail: gfhou@nankai.edu.cn; Zhang, Jianjun, E-mail: jjzhang@nankai.edu.cn; Zhang, Xiaodan; Zhao, Ying [Institute of Photoelectronics and Tianjin Key Laboratory of Photoelectronic Thin-film Devices and Technique, Nankai University, Tianjin 300071 (China)

    2014-08-14T23:59:59.000Z

    For thin-film silicon solar cells (TFSC), a one-dimensional photonic crystal (1D PC) is a good back reflector (BR) because it increases the total internal reflection at the back surface. We used the plane-wave expansion method and the finite difference time domain (FDTD) algorithm to simulate and analyze the photonic bandgap (PBG), the reflection and the absorption properties of a 1D PC and to further explore the optimal 1D PC design for use in hydrogenated amorphous silicon (a-Si:H) solar cells. With identified refractive index contrast and period thickness, we found that the PBG and the reflection of a 1D PC are strongly influenced by the contrast in bilayer thickness. Additionally, light coupled to the top three periods of the 1D PC and was absorbed if one of the bilayers was absorptive. By decreasing the thickness contrast of the absorptive layer relative to the non-absorptive layer, an average reflectivity of 96.7% was achieved for a 1D PC alternatively stacked with a-Si:H and SiO{sub 2} in five periods. This reflectivity was superior to a distributed Bragg reflector (DBR) structure with 93.5% and an Ag film with 93.4%. n-i-p a-Si:H solar cells with an optimal 1D PC-based BR offer a higher short-circuit current density than those with a DBR-based BR or an AZO/Ag-based BR. These results provide new design rules for photonic structures in TFSC.

  17. Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices

    SciTech Connect (OSTI)

    Martin U. Pralle; James E. Carey

    2010-07-31T23:59:59.000Z

    SiOnyx has developed an enhanced thin film silicon photovoltaic device with improved efficiency. Thin film silicon solar cells suffer from low material absorption characteristics resulting in poor cell efficiencies. SiOnyxs approach leverages Black Silicon, an advanced material fabricated using ultrafast lasers. The laser treated films show dramatic enhancement in optical absorption with measured values in excess of 90% in the visible spectrum and well over 50% in the near infrared spectrum. Thin film Black Silicon solar cells demonstrate 25% higher current generation with almost no impact on open circuit voltage as compared with representative control samples. The initial prototypes demonstrated an improvement of nearly 2 percentage points in the suns Voc efficiency measurement. In addition we validated the capability to scale this processing technology to the throughputs (< 5 min/m2) required for volume production using state of the art commercially available high power industrial lasers. With these results we clearly demonstrate feasibility for the enhancement of thin film solar cells with this laser processing technique.

  18. Thin film solar cells using impure polycrystalline silicon M. Rodot (1), M. Barbe (1), J. E. Bouree (1), V. Perraki (*) (1), G. Revel (2),R. Kishore (2) (**), J. L. Pastol (2), R. Mertens (3), M. Caymax (3) and M. Eyckmans

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    687 Thin film solar cells using impure polycrystalline silicon M. Rodot (1), M. Barbe (1), J. E avec les autres aptes à l'utilisation de Si-UMG bon marché. Abstract. 2014 Epitaxial solar cells have and electron diffusion length adequate to produce good solar cells. 10.3 % efficiency cells have been obtained

  19. Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD

    E-Print Network [OSTI]

    doped p-type (100) crystalline silicon substrates. We have studied the effect of the epitaxial intrinsic The photovoltaic industry has been growing with astonishing rates over the past years, but expansion plans

  20. Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD

    E-Print Network [OSTI]

    doped p-type (100) crystalline silicon substrates. We have studied the effect of the epitaxial intrinsic-2263" DOI : 10.1016/j.solmat.2011.03.038 #12;2 1. Introduction The photovoltaic industry has been growing

  1. Performance of Ultrathin Silicon Solar Microcells with Nanostructures of Relief

    E-Print Network [OSTI]

    Rogers, John A.

    of the materials. Solar cells based on thin films of amorphous or polycrystalline silicon require sub- stantially, Urbana, Illinois 61801 ABSTRACT Recently developed classes of monocrystalline silicon solar microcells systems that benefit from thin construction and efficient materials utilization. KEYWORDS Nanoimprint

  2. Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint

    SciTech Connect (OSTI)

    Goodrich, A.; Woodhouse, M.; Hacke, P.

    2012-06-01T23:59:59.000Z

    Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so -- polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.

  3. Thin Silicon Solar Cells: A Path to 35% Shockley-Queisser Limits

    SciTech Connect (OSTI)

    Ding, Laura; Boccard, Mathieu; Williams, Joshua; Jeffries, April; Gangam, Srikanth; Ghosh, Kunal; Honsberg, Christiana; Bowden, Stuart; Holman, Zachary; Atwater, Harry; Buonassisi, Tonio; Bremner, Stephen; Green, Martin; Balif, Christoph; Bertoni, Mariana

    2014-06-08T23:59:59.000Z

    Crystalline silicon technology is expected to remain the leading photovoltaic industry workhorse for decades. We present here the objectives and workplan of a recently launched project funded by the U.S. Department of Energy through the Foundational Program to Advance Cell Efficiency II (FPACE II), which aims at leading crystalline silicon to an efficiency breakthrough. The project will tackle fundamental approach of materials design, defect engineering, device simulations and materials growth and characterization. Among the main novelties, the implementation of carrier selective contacts made of wide bandgap material or stack of materials is investigated for improved passivation, carrier extraction and carrier transport. Based on an initial selection of candidate materials, preliminary experiments are conducted to verify the suitability of their critical parameters as well as preservation of the silicon substrate surface and bulk properties. The target materials include III-V and metal-oxide materials.

  4. High efficiency low cost thin film silicon solar cell design and method for making

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Denver, CO)

    1999-01-01T23:59:59.000Z

    A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

  5. High efficiency low cost thin film silicon solar cell design and method for making

    DOE Patents [OSTI]

    Sopori, B.L.

    1999-04-27T23:59:59.000Z

    A semiconductor device is described having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer. 9 figs.

  6. High efficiency, low cost, thin film silicon solar cell design and method for making

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Denver, CO)

    2001-01-01T23:59:59.000Z

    A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

  7. A survey of thin-film solar photovoltaic industry & technologies

    E-Print Network [OSTI]

    Grama, Sorin

    2007-01-01T23:59:59.000Z

    A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

  8. Multi-resonant silver nano-disk patterned thin film hydrogenated amorphous silicon solar cells for Staebler-Wronski effect compensation

    E-Print Network [OSTI]

    Vora, Ankit; Pearce, Joshua M; Bergstrom, Paul L; Gney, Durdu

    2014-01-01T23:59:59.000Z

    We study polarization independent improved light trapping in commercial thin film hydrogenated amorphous silicon (a-Si:H) solar photovoltaic cells using a three-dimensional silver array of multi-resonant nano-disk structures embedded in a silicon nitride anti-reflection coating (ARC) to enhance optical absorption in the intrinsic layer (i-a-Si:H) for the visible spectrum for any polarization angle. Predicted total optical enhancement (OE) in absorption in the i-a-Si:H for AM-1.5 solar spectrum is 18.51% as compared to the reference, and producing a 19.65% improvement in short-circuit current density (JSC) over 11.7 mA/cm2 for a reference cell. The JSC in the nano-disk patterned solar cell (NDPSC) was found to be higher than the commercial reference structure for any incident angle. The NDPSC has a multi-resonant optical response for the visible spectrum and the associated mechanism for OE in i-a-Si:H layer is excitation of Fabry-Perot resonance facilitated by surface plasmon resonances. The detrimental Staebl...

  9. Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light-scattering substrate

    E-Print Network [OSTI]

    Psaltis, Demetri

    solar cells Appl. Phys. Lett. 101, 221110 (2012) Error analysis for concentrated solar collectors JThin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light of organic solar cells APL: Org. Electron. Photonics 5, 251 (2012) Effects of the Al cathode evaporation rate

  10. Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic crystals

    E-Print Network [OSTI]

    John, Sajeev

    a significant part of silicon solar cell cost. Thin film technology is a promising way to avoid these costCoupled optical and electrical modeling of solar cell based on conical pore silicon photonic://jap.aip.org/authors #12;Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic

  11. Recent technological advances in thin film solar cells

    SciTech Connect (OSTI)

    Ullal, H.S.; Zwelbel, K.; Surek, T.

    1990-03-01T23:59:59.000Z

    High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

  12. Design and fabrication of photonic crystals in epitaxial free silicon for ultrathin solar cells

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Design and fabrication of photonic crystals in epitaxial free silicon for ultrathin solar cells photovoltaic solar cell. Optical simulations performed on a complete solar cell revealed that patterning to obtain ultrathin patterned solar cells. Keywords: Photonic crystals; Epitaxial crystalline silicon; Thin

  13. Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell

    E-Print Network [OSTI]

    Li, Tong; Jiang, Chun

    2010-01-01T23:59:59.000Z

    We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

  14. Engineering Metal Impurities in Multicrystalline Silicon Solar...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Transition metals are one of the main culprits in degrading the efficiency of multicrystalline solar...

  15. Silicon Solar Cell Light-Trapping Using Defect Mode Photonic Kelsey A. Whitesell*a

    E-Print Network [OSTI]

    Atwater, Harry

    Silicon Solar Cell Light-Trapping Using Defect Mode Photonic Crystals Kelsey A. Whitesell to enhance performance of thin film solar cells because of their unique ability to control light. We show crystalline silicon solar cells of up to 205% from = 300nm to 1100nm compared to a planar cell

  16. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y. Simon (Golden, CO); Landry, Marc D. (Lafayette, CO); Pitts, John R. (Lakewood, CO)

    1997-01-01T23:59:59.000Z

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

  17. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

    1997-05-06T23:59:59.000Z

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

  18. Laser wafering for silicon solar.

    SciTech Connect (OSTI)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01T23:59:59.000Z

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  19. amorphous silicon thin: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    values previously Hellman, Frances 6 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  20. Amorphous silicon passivated contacts for diffused junction silicon solar cells

    SciTech Connect (OSTI)

    Bullock, J., E-mail: james.bullock@anu.edu.au; Yan, D.; Wan, Y.; Cuevas, A. [Research School of Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Demaurex, B.; Hessler-Wyser, A.; De Wolf, S. [cole Polytechnique Fdrale de Lausanne (EPFL), Institute of micro engineering (IMT), Photovoltaics and Thin Film Electronic Laboratory, Maladire 71, CH-200 Neuchtel (Switzerland)

    2014-04-28T23:59:59.000Z

    Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopyenergy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

  1. Amorphous silicon/crystalline silicon heterojunctions: The future of high-efficiency silicon solar cells

    E-Print Network [OSTI]

    Firestone, Jeremy

    ;5 Record efficiencies #12;6 Diffused-junction solar cells Diffused-junction solar cell Chemical passivation to ~650 mV #12;7 Silicon heterojunction solar cells a-Si:H provides excellent passivation of c-Si surface Heterojunction solar cell Chemical passivation Chemical passivation #12;8 Voc and silicon heterojunction solar

  2. Advanced crystallization techniques of ''solar grade'' silicon

    SciTech Connect (OSTI)

    Gasparini, M.; Alessandri, M.; Calligarich, C.; Pizzini, S.; Rava, P.; Redaelli, F.; Sardi, L.

    1982-09-01T23:59:59.000Z

    Microstructural, electrical and photovoltaic characteristics of polycristalline silicon solar cells fabricated with silicon ingots containing 5, 100 and 500 ppmw iron are reported and discussed. All silicon ingots were grown by the directional solidification technique in graphite or special quartz molds and doped intentionally with iron, in order to evaluate the potentiality of the D.S. technique when employed with solar silicon feedstocks. Results indicate that structural breakdown limits the amount of the ingot which is usable for solar cells fabrication, but also that efficiencies in excess of 10% are obtained using the ''good'' region of the ingot.

  3. Thin film solar energy collector

    DOE Patents [OSTI]

    Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

    1983-11-22T23:59:59.000Z

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  4. Flexible Solar-Energy Harvesting System on Plastic with Thin-film LC Oscillators Operating Above ft for

    E-Print Network [OSTI]

    Flexible Solar-Energy Harvesting System on Plastic with Thin-film LC Oscillators Operating Above ft- This paper presents an energy-harvesting system consisting of amorphous-silicon (a-Si) solar cells and thin of the energy-harvesting system. The solar module consists of solar cells in series operating at an output

  5. Polycrystalline Silicon Solar Cells Fabricated by Pulsed Rapid Thermal Annealing of Amorphous Silicon

    E-Print Network [OSTI]

    Lee, I-Syuan

    2014-05-07T23:59:59.000Z

    optimized. The novel nickel-induced crystallization with low thermal budget was demonstrated. Polycrystalline silicon thin films were formed from the amorphous silicon thin films by the pulsed rapid thermal annealing process enhanced with a thin nickel...

  6. ULTRA-LIGHTWEIGHT AMORPHOUS SILICON SOLAR CELLS DEPOSITED OIN 7.5pn-1 THICK STAINLESS STEEL SUBSTRATES

    E-Print Network [OSTI]

    Deng, Xunming

    ULTRA-LIGHTWEIGHT AMORPHOUS SILICON SOLAR CELLS DEPOSITED OIN 7.5pn-1 THICK STAINLESS STEEL specific power for space application, we deposited a-Si thin film solar cells on ultra-thin stainless steel-thin stainless steel (SS) substrates (down to 7.5 pm) for space power applications. In this paper, we report our

  7. Accurate performance measurement of silicon solar cells

    E-Print Network [OSTI]

    accuracy. The light source is very important when calibrating solar cells. Commonly used light sourcesAccurate performance measurement of silicon solar cells William Murray Keogh July 2001 A thesis is an important part of the solar cell manufacturing process. Two classes of measurement can be considered

  8. Integrated photonic structures for light trapping in thin-film Si solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

  9. amorphous silicon solar: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 26 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  10. Fabricating solar cells with silicon nanoparticles

    DOE Patents [OSTI]

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

    2014-09-02T23:59:59.000Z

    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  11. Texturization of multicrystalline silicon solar cells

    E-Print Network [OSTI]

    Li, Dai-Yin

    2010-01-01T23:59:59.000Z

    A significant efficiency gain for crystalline silicon solar cells can be achieved by surface texturization. This research was directed at developing a low-cost, high-throughput and reliable texturing method that can create ...

  12. Dual gratings for enhanced light trapping in thin-film solar cells

    E-Print Network [OSTI]

    , Ireland * christian.schuster@york.ac.uk Abstract: Thin film solar cells benefit significantly from; (350.6050) Solar energy. References and links 1. M. A. Green, J. Zhao, A. Wang, and S. R. Wenham, "Progress and outlook for high-efficiency crystalline silicon solar cells," Sol. Energy Mater. Sol. Cells 65

  13. Arrays of ultrathin silicon solar microcells

    DOE Patents [OSTI]

    Rogers, John A; Rockett, Angus A; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

    2014-03-25T23:59:59.000Z

    Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

  14. Manufacture of silicon carbide using solar energy

    DOE Patents [OSTI]

    Glatzmaier, Gregory C. (Boulder, CO)

    1992-01-01T23:59:59.000Z

    A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

  15. Compensated amorphous-silicon solar cell

    DOE Patents [OSTI]

    Devaud, G.

    1982-06-21T23:59:59.000Z

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

  16. Deng & Schiff, Amorphous Silicon Based Solar Cells rev. 7/30/2002, Page 1 Amorphous Silicon Based Solar Cells

    E-Print Network [OSTI]

    Deng, Xunming

    Deng & Schiff, Amorphous Silicon Based Solar Cells rev. 7/30/2002, Page 1 Amorphous Silicon Based Solar Cells Xunming Deng and Eric A. Schiff Table of Contents 1 Overview 3 1.1 Amorphous Silicon: The First Bipolar Amorphous Semiconductor 3 1.2 Designs for Amorphous Silicon Solar Cells: A Guided Tour 6

  17. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, J.L.

    1996-07-23T23:59:59.000Z

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

  18. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, James L. (Pleasanton, CA)

    1996-01-01T23:59:59.000Z

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

  19. ThinSilicon | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit with formSoutheasternInformationPolicyREDD+ BookThinSilicon Jump to:

  20. Method of casting silicon into thin sheets

    DOE Patents [OSTI]

    Sanjurjo, Angel (San Jose, CA); Rowcliffe, David J. (Los Altos, CA); Bartlett, Robert W. (Tucson, AZ)

    1982-10-26T23:59:59.000Z

    Silicon (Si) is cast into thin shapes within a flat-bottomed graphite crucible by providing a melt of molten Si along with a relatively small amount of a molten salt, preferably NaF. The Si in the resulting melt forms a spherical pool which sinks into and is wetted by the molten salt. Under these conditions the Si will not react with any graphite to form SiC. The melt in the crucible is pressed to the desired thinness with a graphite tool at which point the tool is held until the mass in the crucible has been cooled to temperatures below the Si melting point, at which point the Si shape can be removed.

  1. GCL Solar Energy Technology Holdings formerly GCL Silicon aka...

    Open Energy Info (EERE)

    GCL Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu Zhongneng Polysilicon Jump to: navigation, search Name: GCL Solar Energy Technology Holdings (formerly GCL...

  2. CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS

    E-Print Network [OSTI]

    Hart, Gus

    CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS by David T. Oliphant. Woolley Dean, College of Physical and Mathematical Sciences #12;ABSTRACT CHARACTERIZATION OF URANIUM, URANIUM OXIDE AND SILICON MULTILAYER THIN FILMS David T. Oliphant Department of Physics and Astronomy

  3. amorphous silicon thin-film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    amorphous silicon Kanicki, Jerzy 17 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  4. Thin Silicon MEMS Contact-Stress Sensor

    SciTech Connect (OSTI)

    Kotovsky, J; Tooker, A; Horsley, D A

    2009-12-07T23:59:59.000Z

    This work offers the first, thin, MEMS contact-stress (CS) sensor capable of accurate in situ measruement of time-varying, contact-stress between two solid interfaces (e.g. in vivo cartilage contact-stress and body armor dynamic loading). This CS sensor is a silicon-based device with a load sensitive diaphragm. The diaphragm is doped to create piezoresistors arranged in a full Wheatstone bridge. The sensor is similar in performance to established silicon pressure sensors, but it is reliably produced to a thickness of 65 {micro}m. Unlike commercial devices or other research efforts, this CS sensor, including packaging, is extremely thin (< 150 {micro}m fully packaged) so that it can be unobtrusively placed between contacting structures. It is built from elastic, well-characterized materials, providing accurate and high-speed (50+ kHz) measurements over a potential embedded lifetime of decades. This work explored sensor designs for an interface load range of 0-2 MPa; however, the CS sensor has a flexible design architecture to measure a wide variety of interface load ranges.

  5. Enhanced efficiency of thin film solar cells using a shifted dual grating plasmonic structure

    E-Print Network [OSTI]

    Levy, Uriel

    .5403) Plasmonics; (310.2790) Guided waves. References and links 1. O. Morton, "Solar energy: A new day dawning Society of America OCIS codes: (350.6050) Solar energy; (050.2770) Gratings; (310.0310) Thin films; (250? Silicon valley sunrise," Nature 443(7107), 1922 (2006). 2. M. A. Green and S. Pillai, "Harnessing

  6. Metal electrode for amorphous silicon solar cells

    DOE Patents [OSTI]

    Williams, Richard (Princeton, NJ)

    1983-01-01T23:59:59.000Z

    An amorphous silicon solar cell having an N-type region wherein the contact to the N-type region is composed of a material having a work function of about 3.7 electron volts or less. Suitable materials include strontium, barium and magnesium and rare earth metals such as gadolinium and yttrium.

  7. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01T23:59:59.000Z

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing,morebetween the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.less

  8. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01T23:59:59.000Z

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.

  9. Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a

    E-Print Network [OSTI]

    Alam, Muhammad A.

    Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a J. D. Servaites thin-film solar cell types: hydrogenated amorphous silicon a-Si:H p-i-n cells, organic bulk heterojunction BHJ cells, and Cu In,Ga Se2 CIGS cells. All three device types exhibit a significant shunt leakage

  10. Indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1982-12-28T23:59:59.000Z

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  11. Polycrystalline thin-film solar cells and modules

    SciTech Connect (OSTI)

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01T23:59:59.000Z

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  12. Polycrystalline thin-film solar cells and modules

    SciTech Connect (OSTI)

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01T23:59:59.000Z

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  13. Efficiency of silicon solar cells containing chromium

    DOE Patents [OSTI]

    Frosch, Robert A. Administrator of the National Aeronautics and Space (New Port Beach, CA); Salama, Amal M. (New Port Beach, CA)

    1982-01-01T23:59:59.000Z

    Efficiency of silicon solar cells containing about 10.sup.15 atoms/cm.sup.3 of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200.degree. C. to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon material.

  14. Investigating the efficiency of Silicon Solar cells at

    E-Print Network [OSTI]

    Attari, Shahzeen Z.

    Investigating the efficiency of Silicon Solar cells at different temperatures and wavelengths to study the characteristics of silicon photovoltaic cells (solar cells). We vary the wavelength of light as well as the temperature of the solar cell to investigate how the open voltage across the cell varies

  15. 28th European Photovoltaic Solar Energy Conference and Exhibition 1.BO11.2 DOWN CONVERTER DEVICE COMBINING RARE-EARTH DOPED THIN LAYER AND PHOTONIC

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    COMBINING RARE-EARTH DOPED THIN LAYER AND PHOTONIC CRYSTAL FOR C-SI BASED SOLAR CELL Thierry Deschamps1 of the spectrum, hence demonstrating the relevance of such an approach. Keywords: Thin Film Solar Cell reducing the use of raw material, meaning the PV cell cost. Concerning the crystalline silicon-based solar

  16. DISORDER ENGINEERING FOR LIGHT-TRAPPING IN THIN-FILM SOLAR CELLS P. Kowalczewski, M. Liscidini, and L.C. Andreani

    E-Print Network [OSTI]

    at the significantly reduced computational cost. 3 TAILORING THE ROUGHNESS FOR LIGHT- TRAPPING Solar cell structureDISORDER ENGINEERING FOR LIGHT-TRAPPING IN THIN-FILM SOLAR CELLS P. Kowalczewski, M. Liscidini: In this work we focus on randomly rough textures for light-trapping in thin-film silicon solar cells. We use

  17. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

    E-Print Network [OSTI]

    Mailoa, Jonathan P.

    With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband ...

  18. Project Profile: Development and Productization of High-Efficiency, Low-Cost Building-Integrated PV Shingles Using Monocrystalline Silicon Thin-Film Solar Cells

    Broader source: Energy.gov [DOE]

    The Solexel-OC team is developing a BIPV roofing shingle product that includes low-profile solar modules and a unique attachment system that will be fastened directly to the roof and incorporates...

  19. Impact of dislocations and dangling bond defects on the electrical performance of crystalline silicon thin films

    SciTech Connect (OSTI)

    Steffens, S.; Becker, C., E-mail: christiane.becker@helmholtz-berlin.de; Amkreutz, D.; Schnegg, A.; Abou-Ras, D.; Lips, K.; Rech, B. [Helmholtz-Zentrum Berlin fr Materialien und Energie, Berlin (Germany); Klossek, A. [Brandenburgische Technische Universitt, Cottbus (Germany); Kittler, M. [Brandenburgische Technische Universitt, Cottbus (Germany); IHP Microelectronics, Frankfurt (Oder) (Germany); Chen, Y.-Y. [Helmholtz-Zentrum Berlin fr Materialien und Energie, Berlin (Germany); Green Energy and Environment Research Labs, Industrial Technology Research Institute, Hsinchu, Taiwan (China); Klingsporn, M. [IHP Microelectronics, Frankfurt (Oder) (Germany)

    2014-07-14T23:59:59.000Z

    A wide variety of liquid and solid phase crystallized silicon films are investigated in order to determine the performance limiting defect types in crystalline silicon thin-film solar cells. Complementary characterization methods, such as electron spin resonance, photoluminescence, and electron microscopy, yield the densities of dangling bond defects and dislocations which are correlated with the electronic material quality in terms of solar cell open circuit voltage. The results indicate that the strongly differing performance of small-grained solid and large-grain liquid phase crystallized silicon can be explained by intra-grain defects like dislocations rather than grain boundary dangling bonds. A numerical model is developed containing both defect types, dislocations and dangling bonds, describing the experimental results.

  20. High temperature investigations of crystalline silicon solar cell materials

    E-Print Network [OSTI]

    Hudelson, George David Stephen, III

    2009-01-01T23:59:59.000Z

    Crystalline silicon solar cells are a promising candidate to provide a sustainable, clean energy source for the future. In order to bring about widespread adoption of solar cells, much work is needed to reduce their cost. ...

  1. Integrated All-silicon Thin-film Power Electronics on Flexible Sheets For Ubiquitous Wireless Charging Stations based on Solar-energy Harvesting

    E-Print Network [OSTI]

    . The blocks overcome these challenges and generate AC power using a power inverter and control circuits, all the power inverter circuit. To generate an AC output current, the two solar modules (S1/2) are used maximizes the current, and all of the S1/2 current is delivered to the load, yielding high power-inverter

  2. Metal catalyst technique for texturing silicon solar cells

    DOE Patents [OSTI]

    Ruby, Douglas S. (Albuquerque, NM); Zaidi, Saleem H. (Albuquerque, NM)

    2001-01-01T23:59:59.000Z

    Textured silicon solar cells and techniques for their manufacture utilizing metal sources to catalyze formation of randomly distributed surface features such as nanoscale pyramidal and columnar structures. These structures include dimensions smaller than the wavelength of incident light, thereby resulting in a highly effective anti-reflective surface. According to the invention, metal sources present in a reactive ion etching chamber permit impurities (e.g. metal particles) to be introduced into a reactive ion etch plasma resulting in deposition of micro-masks on the surface of a substrate to be etched. Separate embodiments are disclosed including one in which the metal source includes one or more metal-coated substrates strategically positioned relative to the surface to be textured, and another in which the walls of the reaction chamber are pre-conditioned with a thin coating of metal catalyst material.

  3. area solar cells: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cells Lecture 6: Solar Cells Solar Cell Technologies A) Crystalline Silicon B) Thin Film C) Group III-IV Cells 2Montana State University: Solar Cells Lecture 6:...

  4. aluminium arsenide solar cells: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cells Lecture 6: Solar Cells Solar Cell Technologies A) Crystalline Silicon B) Thin Film C) Group III-IV Cells 2Montana State University: Solar Cells Lecture 6:...

  5. au crystalline thin: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for manufacturing high...

  6. applied type thin: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for manufacturing high...

  7. US polycrystalline thin film solar cells program

    SciTech Connect (OSTI)

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L. (Solar Energy Research Inst., Golden, CO (USA)) [Solar Energy Research Inst., Golden, CO (USA)

    1989-11-01T23:59:59.000Z

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the US Department of Energy's long-term goals by achieving high efficiencies (15%-20%), low-cost ($50/m{sup 2}), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The US Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe{sub 2} and CdTe with subcontracts to start in Spring 1990. 23 refs., 5 figs.

  8. Thin film absorber for a solar collector

    DOE Patents [OSTI]

    Wilhelm, William G. (Cutchogue, NY)

    1985-01-01T23:59:59.000Z

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  9. Electrical overstress failure in silicon solar cells

    SciTech Connect (OSTI)

    Pease, R.L.; Barnum, J.R.; van Lint, V.A.J.; Vulliet, W.V.; Wrobel, T.F.

    1982-11-01T23:59:59.000Z

    A solar-cell electrical-overstress-failure model and the results of experimental measurements of threshold pulsed failure currents on four types of silicon solar cells are presented. The transient EMP field surrounding a lightning stroke has been identified as a potential threat to a photovoltaic array, yet failure analysis of solar cells in a pulsed environment had not previously been reported. Failure in the low-resistivity concentrator cells at pulse widths between 1 ..mu..s and 1 ms occurred initially in the junction. Finger damage in the form of silver melting occurs at currents only slightly greater than that required for junction damage. The result of reverse-bias transient-overstress tests on high-resistivity (10 ..cap omega..cm) cells demonstrated that the predominant failure mode was due to edge currents. These flat-plate cells failed at currents of only 4 to 20 A, which is one or two orders of magnitude below the model predictions. It thus appears that high-resistivity flat-plate cells are quite vulnerable to electrical overstress which could be produced by a variety of mechanisms.

  10. Amorphous silicon thin film transistor as nonvolatile device.

    E-Print Network [OSTI]

    Nominanda, Helinda

    2008-10-10T23:59:59.000Z

    n-channel and p-channel amorphous-silicon thin-film transistors (a-Si:H TFTs) with copper electrodes prepared by a novel plasma etching process have been fabricated and studied. Their characteristics are similar to those of TFTs with molybdenum...

  11. EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques

    E-Print Network [OSTI]

    Kaiser, Todd J.

    ;3 Screen Printed Solar Cells · Firing the contacts ­ The furnace heats the cell to a high temperature by Efficiency 22 Rear Panel before Lamination 23 Buried Contact Solar Cells · High Efficiency · Laser groved1 EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques Dr. Todd J. Kaiser

  12. Hybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong,

    E-Print Network [OSTI]

    Cui, Yi

    ABSTRACT: Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices solar cell. Additionally, about 26% of the module cost comes from the fabrication processes of a SiHybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong, Erik C. Garnett, Shuang Wang, Zongfu Yu

  13. Growth of nano-and microcrystalline silicon thin films at low temperature by pulsed electron deposition

    E-Print Network [OSTI]

    Zexian, Cao

    crystallites (heating-film silicon solar cells take a larger market share than the single- and polycrystalline silicon solar cells industry. In all the efforts, substrate heating or post-annealing at a temperature higher than 300 1C

  14. Solar cell structure incorporating a novel single crystal silicon material

    DOE Patents [OSTI]

    Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

    1983-01-01T23:59:59.000Z

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  15. Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer

    DOE Patents [OSTI]

    Carlson, David E. (Yardley, PA)

    1982-01-01T23:59:59.000Z

    An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

  16. Cost-Effective Silicon Wafers for Solar Cells: Direct Wafer Enabling Terawatt Photovoltaics

    SciTech Connect (OSTI)

    None

    2010-01-15T23:59:59.000Z

    Broad Funding Opportunity Announcement Project: 1366 is developing a process to reduce the cost of solar electricity by up to 50% by 2020from $0.15 per kilowatt hour to less than $0.07. 1366s process avoids the costly step of slicing a large block of silicon crystal into wafers, which turns half the silicon to dust. Instead, the company is producing thin wafers directly from molten silicon at industry-standard sizes, and with efficiencies that compare favorably with todays state-of-the-art technologies. 1366s wafers could directly replace wafers currently on the market, so there would be no interruptions to the delivery of these products to market. As a result of 1366s technology, the cost of silicon wafers could be reduced by 80%.

  17. Geometry control of recrystallized silicon wafers for solar applications

    E-Print Network [OSTI]

    Ruggiero, Christopher W

    2009-01-01T23:59:59.000Z

    The cost of manufacturing crystalline silicon wafers for use in solar cells can be reduced by eliminating the waste streams caused by sawing ingots into individual wafers. Professor Emanuel Sachs has developed a new method ...

  18. Simulation of iron impurity gettering in crystalline silicon solar cells

    E-Print Network [OSTI]

    Powell, Douglas M. (Douglas Michael)

    2012-01-01T23:59:59.000Z

    This work discusses the Impurity-to-Efficiency (12E) simulation tool and applet. The 12E simulator models the physics of iron impurity gettering in silicon solar cells during high temperature processing. The tool also ...

  19. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, T.F.

    1998-07-28T23:59:59.000Z

    A substrate is described for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3{times}10{sup {minus}3} ohm-cm. 4 figs.

  20. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, Theodore F. (Evergreen, CO)

    1998-01-01T23:59:59.000Z

    A substrate for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3.times.10.sup.-3 ohm-cm.

  1. Enabling Thin Silicon Solar Cell Technology

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisitingContractElectron-State HybridizationSecurityDaveArgonne Leadership

  2. Tax Credits Give Thin-Film Solar a Big Boost

    Broader source: Energy.gov [DOE]

    California company will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.

  3. Modeling of thin-film solar thermoelectric generators

    E-Print Network [OSTI]

    Weinstein, Lee Adragon

    Recent advances in solar thermoelectric generator (STEG) performance have raised their prospect as a potential technology to convert solar energy into electricity. This paper presents an analysis of thin-film STEGs. ...

  4. CHARGE STABILITY IN LPCVD SILICON NITRIDE FOR SURFACE PASSIVATION OF SILICON SOLAR CELLS

    E-Print Network [OSTI]

    CHARGE STABILITY IN LPCVD SILICON NITRIDE FOR SURFACE PASSIVATION OF SILICON SOLAR CELLS Yongling Ren, Natalita M Nursam, Da Wang and Klaus J Weber Centre for Sustainable Energy Systems, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 0200, Australia ABSTRACT

  5. Formation of thin-film resistors on silicon substrates

    DOE Patents [OSTI]

    Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

    1988-11-01T23:59:59.000Z

    The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

  6. NREL Develops ZnSiP2 for Silicon-Based Tandem Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2014-08-01T23:59:59.000Z

    Combining an Earth-abundant chalcopyrite with a silicon layer could significantly boost conversion efficiency above that of single-junction silicon solar cells.

  7. Copper doped polycrystalline silicon solar cell

    DOE Patents [OSTI]

    Lovelace, Alan M. Administrator of the National Aeronautics and Space (La Canada, CA); Koliwad, Krishna M. (La Canada, CA); Daud, Taher (La Crescenta, CA)

    1981-01-01T23:59:59.000Z

    Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

  8. Growth of GaN Thin Films on Silicon Using Single Source Precursors

    E-Print Network [OSTI]

    Boo, Jin-Hyo

    Growth of GaN Thin Films on Silicon Using Single Source Precursors and Development of New We have grown the GaN thin films on silicon substrates using the newly developed single source precursors by thermal MOCVD method. Highly oriented GaN thin films in the [002] direction with hexagonal

  9. Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells

    E-Print Network [OSTI]

    Schiff, Eric A.

    Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells Kai Zhu a,1 , E Solar, Toano, VA 23168, USA Abstract We report infrared depletion modulation spectra for near an infrared modulation spectroscopy technique that probes the optical spectra of dopants and defects

  10. Highly Ordered Vertical Silicon Nanowire Array Composite Thin Films for Thermoelectric Devices

    E-Print Network [OSTI]

    Bowers, John

    Highly Ordered Vertical Silicon Nanowire Array Composite Thin Films for Thermoelectric Devices for thermoelectric devices are presented. Inter- ference lithography was used to pattern square lattice photoresist device. Key words: Silicon nanowires, thermoelectrics, cross-plane measurements, nanowire composite

  11. Transmissive metallic contact for amorphous silicon solar cells

    DOE Patents [OSTI]

    Madan, A.

    1984-11-29T23:59:59.000Z

    A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

  12. area multicrystalline silicon: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

  13. aastaks silicon valleysse: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

  14. assisted grown silicon: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

  15. acid modified silicone: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

  16. athermal silicon microring: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

  17. Anisotropic dewetting in ultra-thin single-crystal silicon-on-insulator films

    E-Print Network [OSTI]

    Danielson, David T. (David Thomas)

    2008-01-01T23:59:59.000Z

    The single crystal silicon-on-insulator thin film materials system represents both an ideal model system for the study of anisotropic thin film dewetting as well as a technologically important system for the development ...

  18. Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demsy and Sajeev John

    E-Print Network [OSTI]

    John, Sajeev

    Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demsy and Sajeev://jap.aip.org/about/rights_and_permissions #12;Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demesya

  19. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01T23:59:59.000Z

    Solar Energy Materials and Solar Cells, vol. 93, 2009, pp.Solar energy materials and solar cells, vol. 91, 2007, pp.to integrate thin-film solar cells and batteries (2)

  20. Solar power conversion efficiency in modulated silicon nanowire photonic Alexei Deinega and Sajeev John

    E-Print Network [OSTI]

    John, Sajeev

    Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinega://jap.aip.org/about/rights_and_permissions #12;Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinegaa that using only 1 lm of silicon, sculpted in the form of a modulated nanowire photonic crystal, solar power

  1. Two-and three-dimensional folding of thin film single-crystalline silicon for photovoltaic

    E-Print Network [OSTI]

    Lewis, Jennifer

    Two- and three-dimensional folding of thin film single-crystalline silicon for photovoltaic power of a functional, nonpla- nar photovoltaic (PV) device. A mechanics model based on the theory of thin plates self-folding photovoltaics capillary force Silicon, in crystalline and amorphous forms, is currently

  2. Silicon Oxynitride Thin Film Barriers for PV Packaging (Poster)

    SciTech Connect (OSTI)

    del Cueto, J. A.; Glick, S. H.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2006-10-03T23:59:59.000Z

    Dielectric, adhesion-promoting, moisture barriers comprised of silicon oxynitride thin film materials (SiOxNy with various material stoichiometric compositions x,y) were applied to: 1) bare and pre-coated soda-lime silicate glass (coated with transparent conductive oxide SnO2:F and/or aluminum), and polymer substrates (polyethylene terephthalate, PET, or polyethylene napthalate, PEN); plus 2) pre- deposited photovoltaic (PV) cells and mini-modules consisting of amorphous silicon (a-Si) and copper indium gallium diselenide (CIGS) thin-film PV technologies. We used plasma enhanced chemical vapor deposition (PECVD) process with dilute silane, nitrogen, and nitrous oxide/oxygen gas mixtures in a low-power (< or = 10 milliW per cm2) RF discharge at ~ 0.2 Torr pressure, and low substrate temperatures < or = 100(degrees)C, over deposition areas ~ 1000 cm2. Barrier properties of the resulting PV cells and coated-glass packaging structures were studied with subsequent stressing in damp-heat exposure at 85(degrees)C/85% RH. Preliminary results on PV cells and coated glass indicate the palpable benefits of the barriers in mitigating moisture intrusion and degradation of the underlying structures using SiOxNy coatings with thicknesses in the range of 100-200 nm.

  3. DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

  4. Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells

    E-Print Network [OSTI]

    Atwater, Harry

    Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells Michael D. Kelzenberg, Daniel B-voltage measurements were made under simulated Air Mass 1.5 global illumination. Photovoltaic spectral response work by our group has shown that macroscopic Si wire arrays (>1 cm2 in area) suitable for photovoltaic

  5. NREL Success Stories - Quest for Inexpensive Silicon Solar Cells

    ScienceCinema (OSTI)

    Branz, Howard

    2013-05-29T23:59:59.000Z

    Scientists at the National Renewable Energy Laboratory (NREL) share their story about a successful partnership with Oak Ridge National Laboratory and the Ampulse Corporation and how support from the US Department of Energy's Technology Commercialization & Deployment Fund has helped it and their silicon solar cell research thrive.

  6. Damage mechanisms in thin film solar cells during sputtering deposition of transparent conductive coatings

    SciTech Connect (OSTI)

    Fan Qihua; Liao Xianbo [Department of Physics and Astronomy, University of Toledo, 2801 West Bancroft Street, Toledo, Ohio 43606 (United States); Deng, Michael [Xunlight Corporation, 3145 Nebraska Avenue, Toledo, Ohio 43607 (United States); Deng Xunming [Department of Physics and Astronomy, University of Toledo, 2801 West Bancroft Street, Toledo, Ohio 43606 (United States); Xunlight Corporation, 3145 Nebraska Avenue, Toledo, Ohio 43607 (United States)

    2009-02-01T23:59:59.000Z

    Amorphous silicon (a-Si) based thin film solar cell grown on flexible stainless steel substrate is one of the most promising energy conversion devices in the future. This type of solar cell uses a transparent conductive oxide (TCO) film as top electrode. It has been a widely accepted opinion that the radio frequency sputtering deposition of the TCO film produces a higher yield than direct current sputtering, and the reason is not clear. Here we show that the damage to the solar cell during the sputtering process is caused by a reverse bias applied to the n-i-p junction. This reverse bias is related to the characteristics of plasma discharge. The mechanism we reveal may significantly affect the solar cell process.

  7. Photonic assisted light trapping integrated in ultrathin crystalline silicon solar cells by nanoimprint lithography

    E-Print Network [OSTI]

    Trompoukis, Christos; Depauw, Valrie; Gordon, Ivan; Poortmans, Jef; 10.1063/1.4749810.

    2012-01-01T23:59:59.000Z

    We report on the fabrication of two-dimensional periodic photonic nanostructures by nanoimprint lithography and dry etching, and their integration into a 1-{\\mu}m-thin mono-crystalline silicon solar cell. Thanks to the periodic nanopatterning, a better in-coupling and trapping of light is achieved, resulting in an absorption enhancement. The proposed light trapping mechanism can be explained as the superposition of a graded index effect and of the diffraction of light inside the photoactive layer. The absorption enhancement is translated into a 23% increase in short-circuit current, as compared to the benchmark cell, resulting in an increase in energy-conversion efficiency.

  8. Amorphous Silicon Solar cells with a Core-Shell Nanograting Structure

    E-Print Network [OSTI]

    Yang, L; Okuno, Y; He, S

    2011-01-01T23:59:59.000Z

    We systematically investigate the optical behaviors of an amorphous silicon solar cell based on a core-shell nanograting structure. The horizontally propagating Bloch waves and Surface Plasmon Polariton (SPP) waves lead to significant absorption enhancements and consequently short-circuit current enhancements of this structure, compared with the conventional planar one. The perpendicular carrier collection makes this structure optically thick and electronically thin. An optimal design is achieved through full-field numerical simulation, and physical explanation is given. Our numerical results show that this configuration has ultrabroadband, omnidirectional and polarization-insensitive responses, and has a great potential in photovoltaics.

  9. The analysis and optimization of a spherical silicon solar cell

    E-Print Network [OSTI]

    McKee, William Randall

    1976-01-01T23:59:59.000Z

    silicon solar cell has been estimated using a cylindrical solar cell with some modifications as an approximate model. Calculations were made for both the cylindrical model and the conventional planar cell with the aid of a Fortran IV computer program... ln the p nnd n layers, respect lvely (cm I) N(X) monochromatic photon flux incident on the solar cell (cm g sec ~ o ) N 0 number of photons/cm sec with wavelengths shorter than l. lp (cm sec ) n po' no thermal equilibrium concentration...

  10. Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

    SciTech Connect (OSTI)

    Allen, T. G., E-mail: thomas.allen@anu.edu.au; Cuevas, A. [Research School of Engineering, Australian National University, Canberra 0200 (Australia)

    2014-07-21T23:59:59.000Z

    This paper proposes the application of gallium oxide (Ga{sub 2}O{sub 3}) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga{sub 2}O{sub 3} films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O{sub 3}) as the reactants. Surface recombination velocities as low as 6.1?cm/s have been recorded with films less than 4.5?nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2?/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga{sub 2}O{sub 3} interface has been found to be approximately 0.5?eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9?eV.

  11. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01T23:59:59.000Z

    of thin- film Li-ion batteries under flexural deflection,thin-film solar cells and batteries (2) Characterizesolar cells and batteries for multifunctional performance (

  12. Method for forming indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1984-03-13T23:59:59.000Z

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  13. antibiotic-impregnated silicone rubber: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for...

  14. Processes for producing low cost, high efficiency silicon solar cells

    DOE Patents [OSTI]

    Rohatgi, Ajeet (Marietta, GA); Chen, Zhizhang (Duluth, GA); Doshi, Parag (Atlanta, GA)

    1996-01-01T23:59:59.000Z

    Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x.

  15. DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS-FILM SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

  16. Silicon Ink for High-Efficiency Solar Cells Captures a Share of the Market (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-08-01T23:59:59.000Z

    Fact sheet on 2011 R&D 100 Award winner Silicon Ink. Liquid silicon has arrived, and with it comes a power boost for solar cells and dramatic cost savings for cell manufacturers.

  17. Conventional and 360 degree electron tomography of a micro-crystalline silicon solar cell

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    for use as the active absorber layer in low cost solar cells [1], for which efficiencies higher than 8Conventional and 360 degree electron tomography of a micro- crystalline silicon solar cell M thereafter) in micro-crystalline silicon (c-Si:H) solar cell. The limitations of inferring the 3D geometry

  18. Preprint 24th EU PVSEC, 2009, Hamburg FITTING OF LATERAL RESISTANCES IN SILICON SOLAR CELLS

    E-Print Network [OSTI]

    Junk, Michael

    Preprint 24th EU PVSEC, 2009, Hamburg FITTING OF LATERAL RESISTANCES IN SILICON SOLAR CELLS cell from electroluminescence (EL) is introduced. A two-dimensional model of the solar cell screen printed monocrystalline silicon solar cell are shown and the influence of lateral diffusion

  19. Low emissivity high-temperature tantalum thin film coatings for silicon devices

    E-Print Network [OSTI]

    Rinnerbauer, Veronika

    The authors study the use of thin ( ? 230?nm) tantalum (Ta) layers on silicon (Si) as a low emissivity (high reflectivity) coating for high-temperature Si devices. Such coatings are critical to reduce parasitic radiation ...

  20. Solar Energy Materials & Solar Cells 58 (1999) 199}208 The behaviour of Na implanted into Mo thin "lms

    E-Print Network [OSTI]

    Rockett, Angus

    Solar Energy Materials & Solar Cells 58 (1999) 199}208 The behaviour of Na implanted into Mo thin, As ngstro( m Solar Center, P.O. Box 534, SE-751 21 Uppsala, Sweden Department of Materials Science Mo thin "lms used as back contacts for Cu(In,Ga)Se solar cells. The samples were analysed

  1. almgb14 thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  2. aggase2 thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  3. area thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  4. aluminide thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  5. antiferroelectric thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  6. ain thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  7. advanced thin film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  8. High-performance porous silicon solar cell development. Final report, October 1, 1993--September 30, 1995

    SciTech Connect (OSTI)

    Maruska, P. [Spire Corp., Bedford, MA (United States)] [Spire Corp., Bedford, MA (United States)

    1996-09-01T23:59:59.000Z

    The goal of the program was to demonstrate use of porous silicon in new solar cell structures. Porous silicon technology has been developed at Spire for producing visible light-emitting diodes (LEDs). The major aspects that they have demonstrated are the following: porous silicon active layers have been made to show photovoltaic action; porous silicon surface layers can act as antireflection coatings to improve the performance of single-crystal silicon solar cells; and porous silicon surface layers can act as antireflection coatings on polycrystalline silicon solar cells. One problem with the use of porous silicon is to achieve good lateral conduction of electrons and holes through the material. This shows up in terms of poor blue response and photocurrents which increase with increasing reverse bias applied to the diode.

  9. Bendable single crystal silicon thin film transistors formed by printing on plastic substrates

    E-Print Network [OSTI]

    Rogers, John A.

    Bendable single crystal silicon thin film transistors formed by printing on plastic substrates E on plastic substrates using an efficient dry transfer printing technique. In these devices, free standing-Si is then transferred, to a specific location and with a controlled orientation, onto a thin plastic sheet

  10. Analysis of copper-rich precipitates in silicon: Chemical state, gettering, and impact on multicrystalline silicon solar cell material

    E-Print Network [OSTI]

    Analysis of copper-rich precipitates in silicon: Chemical state, gettering, and impact on multicrystalline silicon solar cell material Tonio Buonassisia Applied Science and Technology Group, University and Lawrence Berkeley National Laboratory, Berkeley, California 94720 Received 23 September 2004; accepted 13

  11. Novel buried contact technology for advanced silicon solar cells

    SciTech Connect (OSTI)

    Ni Dheasuna, C.; Mathewson, A.; Hecking, L.; Wrixon, G.T. [National Microelectronics Research Centre, Cork (Ireland)

    1994-12-31T23:59:59.000Z

    Increased efficiency of silicon solar cells has resulted in the increased complexity and cost of manufacture. Optical properties can be enhanced by increasing the optical path length, while minimizing both bulk and surface recombination. Conventional silicon based solar cells are fabricated by a series of physical or chemical vapor deposition processes followed by photolithography and etching processes for each layer. These repeated deposition and etching cycles are not only difficult to perform but they also generate severe surface topography. This topography is a major cause of yield loss and reliability problems for advanced solar cells. These problems are especially severe for high aspect ratio contact holes. An alternative method of performing this metallization inexpensively and reliably is by the use of electroless plating. As the plating process occurs selectively on Si and not on the surface passivation layer, thick metal films (Ni and Cu) can be deposited which depend entirely upon the depth of the trench used. The advantages of electroless plating as an alternative to standard metallization will be presented.

  12. EE580 Solar Cells Todd J. Kaiser

    E-Print Network [OSTI]

    Kaiser, Todd J.

    7/21/2010 1 EE580 Solar Cells Todd J. Kaiser Lecture 06 Solar Cell Materials & Structures 1Montana State University: Solar Cells Lecture 6: Solar Cells Solar Cell Technologies A) Crystalline Silicon B) Thin Film C) Group III-IV Cells 2Montana State University: Solar Cells Lecture 6: Solar

  13. EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS

    E-Print Network [OSTI]

    Ceder, Gerbrand

    materials for thin film solar cells such as CdTe and CIGS suffer from concerns over resource scarcity (eEARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS Yun Seog Lee 1 conversion efficiencies should be increased. In terms of reducing module cost, thin film solar cells

  14. Metal-black scattering centers to enhance light harvesting by thin-film solar cells

    E-Print Network [OSTI]

    Peale, Robert E.

    Metal-black scattering centers to enhance light harvesting by thin-film solar cells Deep Panjwania as scattering centers to increase the effective optical thickness of thin-film solar cells. The particular type. Gold-black was deposited on commercial thin-film solar cells using a thermal evaporator in nitrogen

  15. Synchrotron-based investigations of the nature and impact of iron contamination in multicrystalline silicon solar cell materials

    E-Print Network [OSTI]

    2004-01-01T23:59:59.000Z

    Solar Energy Materials & Solar Cells 72, 441 (2002). O. F.discussions about solar cells and defects in cast mc-Si;on Crystalline Silicon Solar Cell Materials and Processes (

  16. Modeling of dual-metal Schottky contacts based silicon micro and nano wire solar cells

    E-Print Network [OSTI]

    Anantaram, M. P.

    Modeling of dual-metal Schottky contacts based silicon micro and nano wire solar cells M. Golam Work function Lifetime Diffusion length Interdigitated solar cell a b s t r a c t We study solar cell nanowires and nanotubes are considered to be potential candidates for low cost and high efficiency solar

  17. Hole Selective MoOx Contact for Silicon Solar Cells Corsin Battaglia,,,

    E-Print Network [OSTI]

    Javey, Ali

    Hole Selective MoOx Contact for Silicon Solar Cells Corsin Battaglia,,, Xingtian Yin,,,, Maxwell Laboratory, Xi'an Jiaotong University, Xi'an, 710049 Shaanxi, People's Republic of China Joint Center/silicon solar cell with a power conversion efficiency of 14.3%. While MoOx is commonly considered

  18. 15.7% Efficient 10-?m-Thick Crystalline Silicon Solar Cells Using Periodic Nanostructures

    E-Print Network [OSTI]

    Branham, Matthew Sanders

    Only ten micrometer thick crystalline silicon solar cells deliver a short-circuit current of 34.5 mA cm[superscript ?2] and power conversion efficiency of 15.7%. The record performance for a crystalline silicon solar cell ...

  19. Light trapping in thin-film solar cells measured by Raman spectroscopy

    SciTech Connect (OSTI)

    Ledinsk, M., E-mail: ledinsky@fzu.cz [Laboratory of Nanostructures and Nanomaterials, Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Cukrovarnick 10, 162 00 Prague (Czech Republic); Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), cole Polytechnique Fdrale de Lausanne (EPFL), Rue de la Maladire 71b, CH-2000 Neuchtel (Switzerland); Moulin, E.; Bugnon, G.; Meillaud, F.; Ballif, C. [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), cole Polytechnique Fdrale de Lausanne (EPFL), Rue de la Maladire 71b, CH-2000 Neuchtel (Switzerland); Ganzerov, K.; Vetushka, A.; Fejfar, A. [Laboratory of Nanostructures and Nanomaterials, Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Cukrovarnick 10, 162 00 Prague (Czech Republic)

    2014-09-15T23:59:59.000Z

    In this study, Raman spectroscopy is used as a tool to determine the light-trapping capability of textured ZnO front electrodes implemented in microcrystalline silicon (?c-Si:H) solar cells. Microcrystalline silicon films deposited on superstrates of various roughnesses are characterized by Raman micro-spectroscopy at excitation wavelengths of 442?nm, 514?nm, 633?nm, and 785?nm, respectively. The way to measure quantitatively and with a high level of reproducibility the Raman intensity is described in details. By varying the superstrate texture and with it the light trapping in the ?c-Si:H absorber layer, we find significant differences in the absolute Raman intensity measured in the near infrared wavelength region (where light trapping is relevant). A good agreement between the absolute Raman intensity and the external quantum efficiency of the ?c-Si:H solar cells is obtained, demonstrating the validity of the introduced method. Applications to thin-film solar cells, in general, and other optoelectronic devices are discussed.

  20. The origin of white luminescence from silicon oxycarbide thin films

    SciTech Connect (OSTI)

    Nikas, V.; Gallis, S., E-mail: sgalis@us.ibm.com; Huang, M.; Kaloyeros, A. E. [College of Nanoscale Sciences and Engineering, State University of New York, Albany, New York 12203 (United States); Nguyen, A. P. D.; Stesmans, A.; Afanas'ev, V. V. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium)

    2014-02-10T23:59:59.000Z

    Silicon oxycarbide (SiC{sub x}O{sub y}) is a promising material for achieving strong room-temperature white luminescence. The present work investigated the mechanisms for light emission in the visible/ultraviolet range (1.54.0?eV) from chemical vapor deposited amorphous SiC{sub x}O{sub y} thin films, using a combination of optical characterizations and electron paramagnetic resonance (EPR) measurements. Photoluminescence (PL) and EPR studies of samples, with and without post-deposition passivation in an oxygen and forming gas (H{sub 2} 5 at.?% and N{sub 2} 95 at.?%) ambient, ruled out typical structural defects in oxides, e.g., Si-related neutral oxygen vacancies or non-bridging oxygen hole centers, as the dominant mechanism for white luminescence from SiC{sub x}O{sub y}. The observed intense white luminescence (red, green, and blue emission) is believed to arise from the generation of photo-carriers by optical absorption through C-Si-O related electronic transitions, and the recombination of such carriers between bands and/or at band tail states. This assertion is based on the realization that the PL intensity dramatically increased at an excitation energy coinciding with the E{sub 04} band gaps of the material, as well as by the observed correlation between the Si-O-C bond density and the PL intensity. An additional mechanism for the existence of a blue component of the white emission is also discussed.

  1. Synchrotron-based investigations of the nature and impact of iron contamination in multicrystalline silicon solar cells

    E-Print Network [OSTI]

    clusters in multicrystalline silicon mc-Si materials used for cost-effective solar cells. Two distinct silicon solar cells Tonio Buonassisia and Andrei A. Istratov Lawrence Berkeley National Laboratory, 1% of the worldwide solar cell market is based on multicrystalline silicon mc-Si .1 It is known that even minute

  2. Processes for producing low cost, high efficiency silicon solar cells

    DOE Patents [OSTI]

    Rohatgi, Ajeet (Marietta, GA); Doshi, Parag (Altanta, GA); Tate, John Keith (Lawrenceville, GA); Mejia, Jose (Atlanta, GA); Chen, Zhizhang (Duluth, GA)

    1998-06-16T23:59:59.000Z

    Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure.

  3. Processes for producing low cost, high efficiency silicon solar cells

    DOE Patents [OSTI]

    Rohatgi, A.; Doshi, P.; Tate, J.K.; Mejia, J.; Chen, Z.

    1998-06-16T23:59:59.000Z

    Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime {tau} and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime {tau} and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO{sub x}. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure. 28 figs.

  4. Thin, High Lifetime Silicon Wafers with No Sawing; Re-crystallization in a Thin Film Capsule

    SciTech Connect (OSTI)

    Emanuel Sachs

    2013-01-16T23:59:59.000Z

    The project fits within the area of renewable energy called photovoltaics (PV), or the generation of electricity directly from sunlight using semiconductor devices. PV has the greatest potential of any renewable energy technology. The vast majority of photovoltaic modules are made on crystalline silicon wafers and these wafers accounts for the largest fraction of the cost of a photovoltaic module. Thus, a method of making high quality, low cost wafers would be extremely beneficial to the PV industry The industry standard technology creates wafers by casting an ingot and then sawing wafers from the ingot. Sawing rendered half of the highly refined silicon feedstock as un-reclaimable dust. Being a brittle material, the sawing is actually a type of grinding operation which is costly both in terms of capital equipment and in terms of consumables costs. The consumables costs associated with the wire sawing technology are particularly burdensome and include the cost of the wire itself (continuously fed, one time use), the abrasive particles, and, waste disposal. The goal of this project was to make wafers directly from molten silicon with no sawing required. The fundamental concept was to create a very low cost (but low quality) wafer of the desired shape and size and then to improve the quality of the wafer by a specialized thermal treatment (called re-crystallization). Others have attempted to create silicon sheet by recrystallization with varying degrees of success. Key among the difficulties encountered by others were: a) difficulty in maintaining the physical shape of the sheet during the recrystallization process and b) difficulty in maintaining the cleanliness of the sheet during recrystallization. Our method solved both of these challenges by encapsulating the preform wafer in a protective capsule prior to recrystallization (see below). The recrystallization method developed in this work was extremely effective at maintaining the shape and the cleanliness of the wafer. In addition, it was found to be suitable for growing very large crystals. The equipment used was simple and inexpensive to operate. Reasonable solar cells were fabricated on re-crystallized material.

  5. amorphous-silicon solar cells: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    state of affairs Schiff, Eric A. 19 Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics University of...

  6. amorphous-silicon-based solar cell: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Pankaj J Edla; Dr. Bhupendra Gupta 89 Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics University of...

  7. 15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2005-11-01T23:59:59.000Z

    The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

  8. Thin film solar cell including a spatially modulated intrinsic layer

    DOE Patents [OSTI]

    Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

    1989-03-28T23:59:59.000Z

    One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

  9. 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2006-08-01T23:59:59.000Z

    The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

  10. Materials Science and Engineering B 134 (2006) 282286 Control of metal impurities in "dirty" multicrystalline silicon for solar cells

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    " multicrystalline silicon for solar cells A.A. Istratova,b,, T. Buonassisia,b,1, M.D. Picketta,b, M. Heuera,b, E processing of solar cells with satisfactory energy conversion efficiency based on inexpensive feedstock.V. All rights reserved. Keywords: Photovoltaics; Solar cells; Solar-grade silicon; Defect engineering

  11. abrasion-resistant thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  12. al-cu-fe thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  13. alendronate-hydroxyapatite thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  14. ag-in-se thin films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Access Theses and Dissertations Summary: ??Performance of polycrystalline silicon thin film solar cells is limited by high defect density solid-phase crystallised material....

  15. Band Gap Energy of Chalcopyrite Thin Film Solar Cell Absorbers Determined by Soft X-Ray Emission and Absorption Spectroscopy

    E-Print Network [OSTI]

    Bar, M.

    2010-01-01T23:59:59.000Z

    8] J.R. Tuttle et al. , Solar Cells 30, 21 (1991). [9] D.OF CHALCOPYRITE THIN FILM SOLAR CELL ABSORBERS DETERMINED BYchalcopyrite thin film solar cell absorbers significantly

  16. Polyx multicrystalline silicon solar cells processed by PF+5 unanalysed ion implantation and rapid thermal annealing

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    695 Polyx multicrystalline silicon solar cells processed by PF+5 unanalysed ion implantation of terrestrial solar cells as compared to classical furnace or pulsed laser annealing. Unfortunately, drawbacks for the fabrication of solar cells. It offers the possibility of achieving strong reduction of cell cost in spite

  17. Solar Cells Beyond Silicon Keld West, The Danish Polymer Centre, Ris National Laboratory, DK-4000

    E-Print Network [OSTI]

    1 Solar Cells Beyond Silicon Keld West, The Danish Polymer Centre, Ris National Laboratory, DK of utilising solar energy, but this direct energy transfer does not involve the elements of focusing solar energy in a way that is economically competitive, also in regions where other energy sources

  18. c e n t r e t Solar Cells Beyond Silicon

    E-Print Network [OSTI]

    1 POLYMER c e n t r e t Solar Cells Beyond Silicon Keld West The Danish Polymer Centre Ris National Laboratory #12;Ris Int. Energy Conference, May 2003 2 POLYMER c e n t r e t Solar Energy Energy Int. Energy Conference, May 2003 3 POLYMER c e n t r e t Solar Energy, Perspective The earth

  19. Structural origins of intrinsic stress in amorphous silicon thin films

    E-Print Network [OSTI]

    Johlin, Eric (Eric Carl)

    Hydrogenated amorphous silicon (a-Si:H) refers to a broad class of atomic configurations, sharing a lack of long-range order, but varying significantly in material properties, including optical constants, porosity, hydrogen ...

  20. LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle

    E-Print Network [OSTI]

    Sites, James R.

    -film polycrystalline solar cells, such as CdTe and CIGS, and the overall performance of these cells. LBIC is uniquelyLBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle Physics response map, was developed and used to map defects in thin-film solar cells [4]. Improvements to the two

  1. The ultra-thin solar cells that could generate power through windows

    E-Print Network [OSTI]

    Rogers, John A.

    international companies are making thin-film solar cells, but they are typically less efficient at convertingThe ultra-thin solar cells that could generate power through windows By Claire Bates Last updated at 11:11 AM on 06th October 2008 Solar cells that are transparent enough to be used to tint windows

  2. Industrial Upscaling of CdTe/CdS Thin Film Solar Cells , A. Bosioa

    E-Print Network [OSTI]

    Romeo, Alessandro

    , these devices are already produced in modules of 60x120 cm2 by two companies, namely Antec Solar in GermanyIndustrial Upscaling of CdTe/CdS Thin Film Solar Cells N. Romeoa , A. Bosioa , A. Romeob , S, ABSTRACT: CdTe/CdS thin film solar cells, since they are made with easily scalable techniques

  3. DISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS AND MODULES WITH 2-D-FILM SOLAR CELLS AND MODULES WITH 2-D SIMULATIONS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS-UNIFORMITIES ON THIN-FILM SOLAR CELLS AND MODULES WITH 2-D SIMULATIONS Clean and environmentally friendly photovoltaic

  4. Focused ion beam specimen preparation for electron holography of electrically biased thin film solar cells

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    solar cells M. Duchamp1 , M. den Hertog2 , R. Imlau1 , C. B. Boothroyd1 , A. Kovcs1 , A. H. Tavabi1, biased TEM specimen, thin film solar cell, FIB Thin films of hydrogenated Si (Si:H) can be used as active absorber layers in solar cells deposited on low cost substrates using plasma-enhanced chemical vapour

  5. METAL BLACKS AS SCATTERING CENTERS TO INCREASE THE EFFICIENCY OF THIN FILM SOLAR CELLS

    E-Print Network [OSTI]

    Peale, Robert E.

    METAL BLACKS AS SCATTERING CENTERS TO INCREASE THE EFFICIENCY OF THIN FILM SOLAR CELLS by DEEP R surface of thin-film solar cells to improve efficiency. The principle is that scattering, which film solar cell. The particular types of particles investigated here are known as "metal-black", well

  6. Spin Coated Plasmonic Nanoparticle Interfaces for Photocurrent Enhancement in Thin Film Si Solar Cells

    E-Print Network [OSTI]

    Israelowitz, Miriam; Cong, Tao; Sureshkumar, Radhakrishna

    2013-01-01T23:59:59.000Z

    Nanoparticle (NP) arrays of noble metals strongly absorb light in the visible to infrared wavelengths through resonant interactions between the incident electromagnetic field and the metal's free electron plasma. Such plasmonic interfaces enhance light absorption and photocurrent in solar cells. We report a cost effective and scalable room temperature/pressure spin-coating route to fabricate broadband plasmonic interfaces consisting of silver NPs. The NP interface yields photocurrent enhancement (PE) in thin film silicon devices by up to 200% which is significantly greater than previously reported values. For coatings produced from Ag nanoink containing particles with average diameter of 40 nm, an optimal NP surface coverage of 7% was observed. Scanning electron microscopy of interface morphologies revealed that for low surface coverage, particles are well-separated, resulting in broadband PE. At higher surface coverage, formation of particle strings and clusters caused red-shifting of the PE peak and a narro...

  7. The effects of concentrated ultraviolet light on high-efficiency silicon solar cells

    SciTech Connect (OSTI)

    Ruby, D.S.; Schubert, W.K.

    1991-01-01T23:59:59.000Z

    The importance of stability in the performance of solar cells is clearly recognized as fundamental. Some of the highest efficiency silicon solar cells demonstrated to date, such as the Point Contact solar cell and the Passivated Emitter solar cell, rely upon the passivation of cell surfaces in order to minimize recombination, which reduces cell power output. Recently, it has been shown that exposure to ultraviolet (UV) light of wavelengths present in the terrestrial solar spectrum can damage a passivating silicon-oxide interface and increase recombination. In this study, we compared the performance of Point Contact and Passivated Emitter solar cells after exposure to UV light. We also examined the effect of UV exposure on oxide-passivated silicon wafers. We found that current Passivated Emitter designs are stable at both one-sun and under concentrated sunlight. The evolution of Point Contact concentrator cell performance shows a clear trend towards more stable cells. 15 refs., 18 figs.

  8. The electrical and optical properties of thin lm diamond implanted with silicon

    E-Print Network [OSTI]

    Kolodzey, James

    :Si alloys were formed by the implantation of Si into polycrystalline diamond lms grown by che- mical vaporThe electrical and optical properties of thin lm diamond implanted with silicon K.J. Roea,* , J of diamond make it an attractive material for use in extreme conditions. Diamond devices have been fabricated

  9. THE ELECTRICAL AND OPTICAL PROPERTIES OF THIN FILM DIAMOND IMPLANTED WITH SILICON

    E-Print Network [OSTI]

    Kolodzey, James

    devices. The C:Si alloys were formed by the implantation of Si into polycrystalline diamond films grownTHE ELECTRICAL AND OPTICAL PROPERTIES OF THIN FILM DIAMOND IMPLANTED WITH SILICON K. J. Roe and J and electrical properties of diamond make it an attractive material for use in extreme conditions. Diamond

  10. Solar Grade Silicon from Agricultural By-products

    SciTech Connect (OSTI)

    Richard M. Laine

    2012-08-20T23:59:59.000Z

    In this project, Mayaterials developed a low cost, low energy and low temperature method of purifying rice hull ash to high purity (5-6Ns) and converting it by carbothermal reduction to solar grade quality silicon (Sipv) using a self-designed and built electric arc furnace (EAF). Outside evaluation of our process by an independent engineering firm confirms that our technology greatly lowers estimated operating expenses (OPEX) to $5/kg and capital expenses (CAPEX) to $24/kg for Sipv production, which is well below best-in-class plants using a Siemens process approach (OPEX of 14/kg and CAPEX of $87/kg, respectively). The primary limiting factor in the widespread use of photovoltaic (PV) cells is the high cost of manufacturing, compared to more traditional sources to reach 6 g Sipv/watt (with averages closer to 8+g/watt). In 2008, the spot price of Sipv rose to $450/kg. While prices have since dropped to a more reasonable $25/kg; this low price level is not sustainable, meaning the longer-term price will likely return to $35/kg. The 6-8 g Si/watt implies that the Sipv used in a module will cost $0.21-0.28/watt for the best producers (45% of the cost of a traditional solar panel), a major improvement from the cost/wafer driven by the $50/kg Si costs of early 2011, but still a major hindrance in fulfilling DOE goal of lowering the cost of solar energy below $1/watt. The solar cell industry has grown by 40% yearly for the past eight years, increasing the demand for Sipv. As such, future solar silicon price spikes are expected in the next few years. Although industry has invested billions of dollars to meet this ever-increasing demand, the technology to produce Sipv remains largely unchanged requiring the energy intensive, and chlorine dependent Siemens process or variations thereof. While huge improvements have been made, current state-of-the-art industrial plant still use 65 kWh/kg of silicon purified. Our technology offers a key distinction to other technologies as it starts one step upstream from all other Sipv production efforts. Our process starts by producing high purity SiO2/C feedstocks from which Sipv can be produced in a single, chlorine free, final EAF step. Specifically, our unique technology, and the resultant SiO2/C product can serve as high purity feedstocks to existing metallurgical silicon (Simet) producers, allowing them to generate Sipv with existing US manufacturing infrastructure, reducing the overall capital and commissioning schedule. Our low energy, low CAPEX and OPEX process purifies the silica and carbon present in rice hull ash (RHA) at low temperatures (< 200C) to produce high purity (5-6 Ns) feedstock for production of Sipv using furnaces similar to those used to produce Simet. During the course of this project we partnered with Wadham Energy LP (Wadham), who burns 220k ton of rice hulls (RH)/yr generating 200 GWh of electricity/yr and >30k ton/yr RHA. The power generation step produces much more energy (42 kWh/kg of final silicon produced) than required to purify the RHA (5 kWh/kg of Sipv, compared to 65 kWh/kg noted above. Biogenic silica offers three very important foundations for producing high purity silicon. First, wastes from silica accumulating plants, such as rice, corn, many grasses, algae and grains, contain very reactive, amorphous silica from which impurities are easily removed. Second, plants take up only a limited set of, and minimal quantities of the heavy metals present in nature, meaning fewer minerals must be removed. Third, biomass combustion generates a product with intrinsic residual carbon, mixed at nanometer length scales with the SiO2. RHA is 80-90 wt% high surface area (20 m2/g), amorphous SiO2 with some simple mineral content mixed intimately with 5-15 wt% carbon. The mineral content is easily removed by low cost, acid washes using Mayaterials IP, leading to purified rice hull ash (RHAclean) at up to 6N purity. This highly reactive silica is partially extracted from RHAclean at 200 C in an environmentally benign process to adjust SiO2:C ratios to those needed in EA

  11. Methods for fabricating thin film III-V compound solar cell

    DOE Patents [OSTI]

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09T23:59:59.000Z

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  12. Optimized scalable stack of fluorescent solar concentrator systems with bifacial silicon solar cells

    SciTech Connect (OSTI)

    Martnez Dez, Ana Luisa, E-mail: a.martinez@itma.es [Fundacin ITMA, Parque Empresarial Principado de Asturias, C/Calafates, Parcela L-3.4, 33417 Avils (Spain); Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Gutmann, Johannes; Posdziech, Janina; Rist, Tim; Goldschmidt, Jan Christoph [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Plaza, David Gmez [Fundacin ITMA, Parque Empresarial Principado de Asturias, C/Calafates, Parcela L-3.4, 33417 Avils (Spain)

    2014-10-21T23:59:59.000Z

    In this paper, we present a concentrator system based on a stack of fluorescent concentrators (FCs) and a bifacial solar cell. Coupling bifacial solar cells to a stack of FCs increases the performance of the system and preserves its efficiency when scaled. We used an approach to optimize a fluorescent solar concentrator system design based on a stack of multiple fluorescent concentrators (FC). Seven individual fluorescent collectors (20 mm20 mm2 mm) were realized by in-situ polymerization and optically characterized in regard to their ability to guide light to the edges. Then, an optimization procedure based on the experimental data of the individual FCs was carried out to determine the stack configuration that maximizes the total number of photons leaving edges. Finally, two fluorescent concentrator systems were realized by attaching bifacial silicon solar cells to the optimized FC stacks: a conventional system, where FC were attached to one side of the solar cell as a reference, and the proposed bifacial configuration. It was found that for the same overall FC area, the bifacial configuration increases the short-circuit current by a factor of 2.2, which is also in agreement with theoretical considerations.

  13. Co-optimizing silicon solar cell processing for efficiency and throughput

    E-Print Network [OSTI]

    Morishige, Ashley E. (Ashley Elizabeth)

    2013-01-01T23:59:59.000Z

    Crystalline silicon solar cells are a proven renewable energy technology, but they have yet to reach low costs commensurate with subsidy-free, grid-scale adoption. To achieve the widespread adoption of photovoltaics, the ...

  14. Iron distribution in silicon after solar cell processing: Synchrotron analysis and predictive modeling

    E-Print Network [OSTI]

    Fenning, David P.

    The evolution during silicon solar cell processing of performance-limiting iron impurities is investigated with synchrotron-based x-ray fluorescence microscopy. We find that during industrial phosphorus diffusion, bulk ...

  15. Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs...

    Broader source: Energy.gov (indexed) [DOE]

    This is particularly evident in the solar world. Refining the raw material used in photovoltaic panels, silicon, is not a cheap endeavor, and has kept the price of panels more...

  16. Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cells

    E-Print Network [OSTI]

    Bertoni, Mariana I.

    In this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline silicon. We analyze a specially prepared solar cell with alternating ...

  17. Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor

    E-Print Network [OSTI]

    Nominanda, Helinda

    2004-01-01T23:59:59.000Z

    The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

  18. (Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor-and solar-

    E-Print Network [OSTI]

    Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor- and solar- grade silicon) produced in the United States in 2009 was $470 million. Four companies produced silicon materials in six plants. Of those companies, three produced ferrosilicon in four plants. Metallurgical

  19. Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

    SciTech Connect (OSTI)

    Bullock, J., E-mail: james.bullock@anu.edu.au; Cuevas, A.; Yan, D. [Research School of Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Demaurex, B.; Hessler-Wyser, A.; De Wolf, S. [Ecole Polytechnique Fdrale de Lausanne (EPFL), Institute of Micro Engineering (IMT), Photovoltaics and Thin Film Electronic Laboratory PVLab, Maladire 71b, CH-200 Neuchtel (Switzerland)

    2014-10-28T23:59:59.000Z

    Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ?1.55?nm, achieve the best carrier-selectivity producing a contact resistivity ?{sub c} of ?3 m? cm{sup 2} and a recombination current density J{sub 0c} of ?40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350?C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

  20. 19.4% -EFFICIENT LARGE AREA REAR-PASSIVATED SCREEN-PRINTED SILICON SOLAR CELLS T. Dullweber*1

    E-Print Network [OSTI]

    be reduced by applying the PERC (passivated emitter and rear cell) solar cell design [8]. The following19.4% -EFFICIENT LARGE AREA REAR-PASSIVATED SCREEN-PRINTED SILICON SOLAR CELLS T. Dullweber*1 , S% in the near future. Keywords: Silicon Solar Cell, Screen Printing, Rear Passivation 1 Introduction About 80

  1. Hydrogenated Nanocrystalline Silicon p-Layer in a-Si:H n-i-p Solar Cells Wenhui Dua)

    E-Print Network [OSTI]

    Deng, Xunming

    Hydrogenated Nanocrystalline Silicon p-Layer in a-Si:H n-i-p Solar Cells Wenhui Dua) , Xianbo Liaob hydrogenated amorphous silicon (a-Si:H) solar cells. Raman scattering spectroscopy and transmission electron). Using this kind of p-layer in n-i-p a-Si:H solar cells, the cell performances were improved with a Voc

  2. FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS

    E-Print Network [OSTI]

    Deng, Xunming

    FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS of Michigan, Ann Arbor, MI 48109, USA ABSTRACT Hydrogenated amorphous silicon (a-Si:H) single- junction solar). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains

  3. See-through amorphous silicon solar cells with selectively transparent and conducting photonic crystal back reflectors for building integrated photovoltaics

    SciTech Connect (OSTI)

    Yang, Yang [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada)] [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada); OBrien, Paul G. [Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada) [Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada); Materials Chemistry Research Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6 (Canada); Ozin, Geoffrey A., E-mail: gozin@chem.utoronto.ca, E-mail: kherani@ecf.utoronto.ca [Materials Chemistry Research Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6 (Canada); Kherani, Nazir P., E-mail: gozin@chem.utoronto.ca, E-mail: kherani@ecf.utoronto.ca [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada); Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada)

    2013-11-25T23:59:59.000Z

    Thin semi-transparent hydrogenated amorphous silicon (a-Si:H) solar cells with selectively transparent and conducting photonic crystal (STCPC) back-reflectors are demonstrated. Short circuit current density of a 135?nm thick a-Si:H cell with a given STCPC back-reflector is enhanced by as much as 23% in comparison to a reference cell with an ITO film functioning as its rear contact. Concurrently, solar irradiance of 295?W/m{sup 2} and illuminance of 3480 lux are transmitted through the cell with a given STCPC back reflector under AM1.5 Global tilt illumination, indicating its utility as a source of space heating and lighting, respectively, in building integrated photovoltaic applications.

  4. Optimization-based design of surface textures for thin-film Si solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    We numerically investigate the light-absorption behavior of thin-film silicon for normal-incident light, using surface textures to enhance absorption. We consider a variety of texture designs, such as simple periodic ...

  5. 1. INTRODUCTION Polycrystalline CdTe thin films solar cells have shown long

    E-Print Network [OSTI]

    Romeo, Alessandro

    for the solar cell, therefore high specific power (ratio of out- put power to the weight) solar cells]. The high specific power is an important issue for space solar cells: if satellites are lighter1. INTRODUCTION Polycrystalline CdTe thin films solar cells have shown long term stable performance

  6. Identification, Characterization, and Implications of Shadow Degradation in Thin Film Solar Cells

    E-Print Network [OSTI]

    Alam, Muhammad A.

    cells [4]. The problem of shadowing of solar panels has been studied for quite some time; however of a solar cell, showing the dark and light current components. (b) The series connection in a solar panelIdentification, Characterization, and Implications of Shadow Degradation in Thin Film Solar Cells

  7. Comparison of electronic structure of as grown and solar grade silicon samples

    SciTech Connect (OSTI)

    Saravanan, R., E-mail: saragow@dataone.in; Sheeba, R. A. J. R. [Madura College, Research Centre and PG Department of Physics (India)

    2012-04-15T23:59:59.000Z

    A comparison of the electronic structure of two different types of silicon materials viz., (i) as grown silicon and (ii) solar silicon has been carried out utilizing maximum entropy method and pair distribution function using powder X-ray data sets. The precise electron density maps have been elucidated for the two samples. The covalent nature of the bonding between atoms in both the samples is found to be well pronounced and clearly seen from the electron density maps. The electron densities at the middle of the Si-Si bond are found to be 0.47 and 0.45 e/A{sup 3} for as grown silicon and solar silicon respectively. In this work, the local structural information has also been obtained by analyzing the atomic pair distribution functions of these two samples.

  8. NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES

    E-Print Network [OSTI]

    Suresh, Subra

    on the nano-indentation of polycrystalline Cu thin films, of three different thicknesses) Si substrates. The films were then vacuum-annealed at 475C for 1 h. The resulting polycrystalline. A diamond Berkovich pyramid indentor with a tip radius, R 50 nm, was used. It is known from nano

  9. Amorphous silicon cell array powered solar tracking apparatus

    DOE Patents [OSTI]

    Hanak, Joseph J. (Lawrenceville, NJ)

    1985-01-01T23:59:59.000Z

    An array of an even number of amorphous silicon solar cells are serially connected between first and second terminals of opposite polarity. The terminals are connected to one input terminal of a DC motor whose other input terminal is connected to the mid-cell of the serial array. Vane elements are adjacent the end cells to selectively shadow one or the other of the end cells when the array is oriented from a desired attitude relative to the sun. The shadowing of one cell of a group of cells on one side of the mid-cell reduces the power of that group substantially so that full power from the group of cells on the other side of the mid-cell drives the motor to reorient the array to the desired attitude. The cell groups each have a full power output at the power rating of the motor. When the array is at the desired attitude the power output of the two groups of cells balances due to their opposite polarity so that the motor remains unpowered.

  10. A FREEWARE 1D EMITTER MODEL FOR SILICON SOLAR CELLS Keith R. McIntosh

    E-Print Network [OSTI]

    Centre for Sustainable Energy Systems, Australian National University, Canberra, ACT 0200, AUSTRALIA 2 Leibniz University of Hannover, Inst. of Solid-State Physics, Dep. Solar Energy, Appelstrasse 2, 30167A FREEWARE 1D EMITTER MODEL FOR SILICON SOLAR CELLS Keith R. McIntosh 1 and Pietro P. Altermatt 2 1

  11. Supporting Information Absorption of Light in a Single-Nanowire Silicon Solar

    E-Print Network [OSTI]

    Yang, Peidong

    1 Supporting Information Absorption of Light in a Single-Nanowire Silicon Solar Cell Decorated Cyclotron Road, Berkeley, California 94720, United States 3 Department of Materials Science and Engineering_yang@berkeley.edu. #12;2 Fabrication of the suspended single-nanowire solar cells Trench substrates were fabricated from

  12. Impact of dopant compensation on the electrical properties of silicon for solar cell applications

    E-Print Network [OSTI]

    Impact of dopant compensation on the electrical properties of silicon for solar cell applications cells. I would like to show my gratitude to Dr. Keith McIntosh, also a member of my supervisory panel, for sharing his techni- cal expertise in solar cells characterization and modelisation, for giving me precious

  13. STATEMENT OF CONSIDERATIONS REQUEST BY BP SOLAR INTERNATIONAL...

    Broader source: Energy.gov (indexed) [DOE]

    RATIONALE FOR DECISION DISPOSITION BP Solar Large-Scale PV Module Manufac- 58 percent cost sharing International, LLC turing Using Ultra-Thin Poly-Crystalline * Silicon Solar Cells...

  14. Method of fabrication of display pixels driven by silicon thin film transistors

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA)

    1999-01-01T23:59:59.000Z

    Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200.degree. C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.

  15. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    SciTech Connect (OSTI)

    Mouro, J.; Gualdino, A.; Chu, V. [Instituto de Engenharia de Sistemas e Computadores Microsistemas e Nanotecnologias (INESC-MN) and IN Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Conde, J. P. [Instituto de Engenharia de Sistemas e Computadores Microsistemas e Nanotecnologias (INESC-MN) and IN Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Department of Bioengineering, Instituto Superior Tcnico (IST), 1049-001 Lisbon (Portugal)

    2013-11-14T23:59:59.000Z

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

  16. High Efficiency Thin Film CdTe and a-Si Based Solar Cells Final Technical Report for the Period

    E-Print Network [OSTI]

    Deng, Xunming

    High Efficiency Thin Film CdTe and a-Si Based Solar Cells Final Technical Report for the Period This is the final report covering approximately 42 months of this subcontract for research on high efficiency CdTe-based thin-film solar cells and on high efficiency a-Si-based thin-film solar cells. Phases I and II have

  17. 17th European Photovoltaic Solar Energy Conference and Exhibition, Munich, Germany, 22-26 October 2001 pg 1 of 4 NATURAL SUNLIGHT CALIBRATION OF SILICON SOLAR CELLS

    E-Print Network [OSTI]

    2001 pg 1 of 4 NATURAL SUNLIGHT CALIBRATION OF SILICON SOLAR CELLS W. Keogh & A. Blakers Australian important when calibrating solar cells. Commonly used light sources solar simulators are expensive to the AM1.5G and AM1.5D standard spectra. However, sunlight is rarely used for calibration of solar cells

  18. Decoupling bulk- and surface-limited lifetimes in thin kerfless silicon wafers using spectrally resolved transient absorption pump-probe spectroscopy and computer simulations

    E-Print Network [OSTI]

    Siah, Sin Cheng

    2013-01-01T23:59:59.000Z

    One of the key technological objectives to further decrease the cost of silicon (Si) PV and enable manufacturing of crystalline silicon is to improve the quality of thin, kerfless Si wafers to monocrystalline equivalent. ...

  19. Novel Approach for Selective Emitter Formation and Front Side Metallization of Crystalline Silicon Solar Cells

    SciTech Connect (OSTI)

    Baomin Xu

    2010-07-28T23:59:59.000Z

    In this project we will explore the possibility of forming the front side metallization and selective emitter layer for the crystalline silicon solar cells through using selective laser ablation to create contact openings on the front surface and a screen printer to make connections with conductive paste. Using this novel approach we expect to reduce the specific contact resistance of the silver gridlines by about one order of magnitude compared to the state-of-art industrial crystalline silicon solar cells to below 1 m??cm2, and use lightly doped n+ emitter layer with sheet resistance of not smaller than 100 ?/?. This represents an enabling improvement on crystalline silicon solar cell performance and can increase the absolute efficiency of the solar cell by about 1%. In this scientific report we first present our result on the selective laser ablation of the nitride layer to make contact openings. Then we report our work on the solar cell fabrication by using the laser ablated contact openings with self-doping paste. Through various electrical property characterization and SIMS analysis, the factors limiting the cell performance have been discussed. While through this proof-of-concept project we could not reach the target on cell efficiency improvement, the process to fabricate 125mm full-sized silicon solar cells using laser ablation and self-doping paste has been developed, and a much better understanding of technical challenges has been achieved. Future direction to realize the potential of the new technology has been clearly defined.

  20. Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells

    E-Print Network [OSTI]

    Rockett, Angus

    conversion efficiency of solar cells made from this material [1]. One of the special qualities of the CIGS improve the solar cell performance. In many of the different CIGS fabrication techniques, an in depthDiffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A

  1. How much can guided modes enhance absorption in thin solar cells?

    E-Print Network [OSTI]

    Atwater, Harry

    How much can guided modes enhance absorption in thin solar cells? Peter N. Saeta,1,2 Vivian E-backed solar cells caused by dipole scatterers embedded in the absorbing layer is studied using a semi limit of efficiency of p-n junction solar cells," J. Appl. Phys. 32, 510519 (1961). 2. C. H. Henry

  2. Rapid Deposition Technology Holds the Key for the World's Largest Manufacturer of Thin-Film Solar Modules (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-08-01T23:59:59.000Z

    First Solar, Inc. has been collaborating with NREL since 1991, advancing its thin-film cadmium telluride solar technology to grow from a startup company to become one of the world's largest manufacturers of solar modules, and the world's largest manufacturer of thin-film solar modules.

  3. SiGe thin-film structures for solar cells

    SciTech Connect (OSTI)

    Bremond, G.; Daami, A.; Laugier, A. [Inst. National des Sciences Appliquees de Lyon, Villeurbanne (France). Lab. de Physique de la Matiere] [and others

    1998-12-31T23:59:59.000Z

    In order to study their applicability as the active base material in Si thin crystalline film solar cell technology, SiGe relaxed layers grown by Liquid Phase Epitaxy (LPE) and Chemical Vapor Deposition (CVD) on Si substrates are investigated by optical and electrical measurements (TEM, EXD, PL, EBIC). The main results of this work is to point out the improvement of the SiGe active base layer by using smooth Ge graded SiGe buffer layer and remote plasma hydrogenation. TEM, EXD, PL experiments show the effect of the Ge graded buffer layer grown using LPE, by confining the threading dislocations in the SiGe buffer layer close to the Si/SiGe interface. EBIC measurements reveal low recombination activity of dislocations at 300 K providing the diffusion length exceeds the 15 {micro}m layer thickness. The enhanced luminescence of SiGe near bandgap indicates that remote plasma hydrogenation induces a decrease of the non-radiative recombination pathways due to dislocations on CVD layers where defect recombinations dominate as indicated by EBIC measurements. This study points out the importance of controlling relaxed SiGe layers with good minority carrier recombination quality as a key issue for the optimization of new SiGe/Si based solar cells.

  4. The 22nd International Photovoltaic Science and Engineering Conference, November 05-09, 2012, Hangzhou, China Gettering of n-type multicrystalline silicon solar cells by

    E-Print Network [OSTI]

    , Hangzhou, China Gettering of n-type multicrystalline silicon solar cells by phosphorus diffusion, boron in heavily dislocated regions. 1. INTRODUCTION N-type multicrystalline silicon has great potential as solar+ diffused region in n- type silicon solar cells with either aluminum annealing or boron diffusion are good

  5. Nanoscale photon management in silicon solar cells Sangmoo Jeong, Shuang Wang, and Yi Cui

    E-Print Network [OSTI]

    Cui, Yi

    and replication of butterfly wings for photovoltaic application J. Vac. Sci. Technol. A 30, 01A146 (2012) High-efficiency (2012) Amorphous and nanocrystalline silicon thin film photovoltaic technology on flexible substrates J. Technol. A 29, 061201 (2011) Photovoltaic manufacturing: Present status, future prospects, and research

  6. California: TetraCell Silicon Solar Cell Improves Efficiency...

    Energy Savers [EERE]

    at the SunShot Grand Challenge Summit in Denver, Colorado. | Photo by John De La Rosa. Solar Companies Go for the Gold with SunShot Incubator The Story of a Cutting-Edge Solar...

  7. Influence of the pattern shape on the photonic efficiency of front-side periodically patterned ultrathin crystalline silicon solar cells

    E-Print Network [OSTI]

    Herman, Aline; Depauw, Valerie; Daif, Ounsi El; Deparis, Olivier

    2012-01-01T23:59:59.000Z

    Patterning the front side of an ultra-thin crystalline silicon (c Si) solar cell helps keeping the energy conversion efficiency high by compensating for the light absorption losses. A super-Gaussian mathematical expression was used in order to encompass a large variety of nanopattern shapes and to study their influence on the photonic performance. We prove that the enhancement in the maximum achievable photo-current is due to both impedance matching condition at short wavelengths and to the wave nature of light at longer wavelengths. We show that the optimal mathematical shape and parameters of the pattern depend on the c Si thickness. An optimal shape comes with a broad optimal parameter zone where fabricating errors would have much less influence on the efficiency. We prove that cylinders are not the best suited shape. To compare our model with a real slab, we fabricated a nanopatterned c Si slab via Nano Imprint Lithography.

  8. Process and apparatus for casting multiple silicon wafer articles

    DOE Patents [OSTI]

    Nanis, Leonard (Palo Alto, CA)

    1992-05-05T23:59:59.000Z

    Method and apparatus of casting silicon produced by the reaction between SiF.sub.4 and an alkaline earth metal into thin wafer-shaped articles suitable for solar cell fabrication.

  9. Development of Novel Front Contract Pastes for Crystalline Silicon Solar Cells

    SciTech Connect (OSTI)

    Duty, C.; Jellison, D. G.E. P.; Joshi, P.

    2012-04-05T23:59:59.000Z

    In order to improve the efficiencies of silicon solar cells, paste to silicon contact formation mechanisms must be more thoroughly understood as a function of paste chemistry, wafer properties and firing conditions. Ferro Corporation has been involved in paste development for over 30 years and has extensive expertise in glass and paste formulations. This project has focused on the characterization of the interface between the top contact material (silver paste) and the underlying silicon wafer. It is believed that the interface between the front contact silver and the silicon wafer plays a dominant role in the electrical performance of the solar cell. Development of an improved front contact microstructure depends on the paste chemistry, paste interaction with the SiNx, and silicon (Si) substrate, silicon sheet resistivity, and the firing profile. Typical front contact ink contains silver metal powders and flakes, glass powder and other inorganic additives suspended in an organic medium of resin and solvent. During fast firing cycles glass melts, wets, corrodes the SiNx layer, and then interacts with underlying Si. Glass chemistry is also a critical factor in the development of an optimum front contact microstructure. Over the course of this project, several fundamental characteristics of the Ag/Si interface were documented, including a higher-than-expected distribution of voids along the interface, which could significantly impact electrical conductivity. Several techniques were also investigated for the interfacial analysis, including STEM, EDS, FIB, EBSD, and ellipsometry.

  10. Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer

    E-Print Network [OSTI]

    Lu, Tianlin

    2012-07-16T23:59:59.000Z

    Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric current gain obtained...

  11. Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer

    E-Print Network [OSTI]

    Lu, Tianlin

    2012-07-16T23:59:59.000Z

    Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric current gain obtained...

  12. Earth abundant materials for high efficiency heterojunction thin film solar cells

    E-Print Network [OSTI]

    Buonassisi, Tonio

    We investigate earth abundant materials for thin-film solar cells that can meet tens of terawatts level deployment potential. Candidate materials are identified by combinatorial search, large-scale electronic structure ...

  13. Technological assessment of light-trapping technology for thin-film Si solar cell

    E-Print Network [OSTI]

    Susantyoko, Rahmat Agung

    2009-01-01T23:59:59.000Z

    The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was analyzed from the technology, market, and ...

  14. Chemical Doping and Enhanced Solar Energy Conversion of Graphene/Silicon Junctions

    E-Print Network [OSTI]

    Li, Xinming; Wang, Kunlin; Wei, Jinquan; Fan, Guifeng; Li, Xiao; Wu, Dehai

    2010-01-01T23:59:59.000Z

    The effect of chemical doping of graphene films on the photovoltaic properties of the graphene/silicon Schottky junction solar cells was investigated. Thionyl chloride modification greatly enhanced the conductivity of graphene film, resulting in a significant improvement in cell performance with a 3-fold increase in conversion efficiency (up to 3.9%) and good short-term stability.

  15. Light Trapping in Silicon Nanowire Solar Cells Erik Garnett and Peidong Yang*

    E-Print Network [OSTI]

    Yang, Peidong

    because of an extraordinarily high short-circuit current density (Jsc), which was attributed to strongly%, with short- circuit photocurrents higher than planar control samples. KEYWORDS Silicon, nanowires, solar cell material. However, the resulting short optical path length and minority carrier diffusion length

  16. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias

    DOE Patents [OSTI]

    Gee, James M; Schmit, Russell R.

    2007-01-30T23:59:59.000Z

    Methods of manufacturing back-contacted silicon solar cells fabricated using a gradient-driven solute transport process, such as thermomigration or electromigration, to create n-type conductive vias connecting the n-type emitter layer on the front side to n-type ohmic contacts located on the back side.

  17. Journal of Crystal Growth 241 (2002) 4550 Boron doping of silicon layers grown by liquid phase epitaxy

    E-Print Network [OSTI]

    Energy Systems, Department of Engineering, Australian National University, Acton, 0200, Australia film solar cell applications as it allows the growth of a back surface field and a lightly doped bulk; B1. Boron; B1. Silicon; B3. Solar cells 1. Introduction Thin film silicon solar cells

  18. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    SciTech Connect (OSTI)

    Guha, S.; Yang, J.

    2005-10-01T23:59:59.000Z

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  19. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01T23:59:59.000Z

    3-6,3-7] Chalcopyrite CIGS solar cells, without introducingperformance CISS and CIGS solar cells with efficiencies uptellurium might impede CIGS/CdTe solar cells from reaching

  20. Synthesis and characterization of inorganic silicon oxycarbide glass thin films by reactive rf-magnetron sputtering

    SciTech Connect (OSTI)

    Ryan, Joseph V.; Pantano, C. G.

    2007-01-03T23:59:59.000Z

    Silicon oxycarbide glasses have been of interest because of the potential range of properties they might exhibit through a change in carbon-to-oxygen ratio. They are metastable materials and, as such, their structures and properties are very dependent upon the synthesis method. Silicon oxycarbide bonding has been seen in materials made by melting, oxidation, polycarbosilane or sol/gel pyrolysis, and chemical vapor deposition. In this work, the radio-frequency reactive sputtering of silicon carbide targets was explored for synthesis of amorphous silicon oxycarbide thin films. SiO (2?2x) Cx films, with a continuous range of compositions where 0silicon oxycarbide bonding comprises 55%-95% of the material structure. These sputter-deposited materials were also found to have significantly less free carbon as compared to those produced by other methods. Thus, the unique properties for these novel oxycarbide materials can now be established.

  1. Enhancement of optical absorption in thin-film organic solar cells through the excitation of plasmonic modes in metallic gratings

    E-Print Network [OSTI]

    Veronis, Georgios

    .1063/1.3377791 Thin-film organic solar cells OSCs are a promising candidate for low-cost energy conversion.16 HoweverEnhancement of optical absorption in thin-film organic solar cells through the excitation up to 50% for such solar cell structures. 2010 American Institute of Physics. doi:10

  2. innovati nNREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells

    E-Print Network [OSTI]

    . Low-bandgap cells can lose 25% of their power output and efficiency ratings as solar cell operating energy output than a low-bandgap cell with the same wattage or power rating. NREL is a nationalinnovati nNREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells Researchers

  3. Design, fabrication, and analysis of crystalline Si-SiGe heterostructure thin-film solar cells

    SciTech Connect (OSTI)

    Said, K.; Poortmans, J.; Caymax, M.; Nijs, J.; Debarge, L.; Christoffel, E.; Slaoui, A.

    1999-10-01T23:59:59.000Z

    One possible method to improve the efficiency of crystalline silicon (Ci) solar cells is by alloying with germanium (Ge). Although the improved absorption of the alloy leads to a gain in the current, the reduction of the alloy bandgap causes a loss in voltage, which overrides the increased current of the SiGe alloy solar cell. There has been a number of theoretical studies to circumvent this behavior. However, to date there has been no detailed study, which discusses the technological implementation of these concepts in solar cells. In this paper, the design issues of crystalline Si-SiGe heterostructure will be dealt with in an attempt to reduce the effect of the increased dark current of the alloyed cells, while at the same time sustaining the enhancement in the current. The enhanced back surface field at the back p{sup +}-Si/p-SiGe interface reduces the base component of the recombination current of the heterostructure cell if recombination caused by dislocations is neglected. A higher infrared (IR) response which results in a higher short-circuit current (2 mA/cm{sup 2} higher than a reference Si cell) has been recorded for the Si-Si{sub .9}Ge{sub .1}-thin-film structure of 15 {micro}m thickness. The reduction in dark saturation current, which has been predicted based on the theoretical calculations could not be realized in the heterostructure SiGe/Si cell due to the degradation effect of the misfit dislocations that decreases the bulk lifetime, and increases the interface recombination velocity. In a structure which contains a p{sup +}-SiGe buffer layer, and efficiency of 12.5% is achieved for a SiGe cell with 15 {micro}m thickness without texturing or optical confinement, which is about the same as the Si reference cell with equal active thickness, but with a higher short-circuit current. These results, for the first time, experimentally prove that alloying with Ge offers a higher current and might have a room for improving the efficiency of the multijunction solar cells or dual bandgap cells when SiGe is used to convert the IR-part of the spectrum.

  4. In-Line Crack and Stress Detection in Silicon Solar Cells Using Resonance Ultrasonic Vibrations

    SciTech Connect (OSTI)

    Ostapenko, Sergei

    2013-04-03T23:59:59.000Z

    Statement of Problem and Objectives. Wafer breakage in automated solar cell production lines is identified as a major technical problem and a barrier for further cost reduction of silicon solar module manufacturing. To the best of our knowledge, there are no commercial systems addressing critical needs for in-line inspection of the mechanical quality of solar wafers and cells. The principal objective of the SBIR program is to validate through experiments and computer modeling the applicability of the Resonance Ultrasonic Vibrations system, which ultimately can be used as a real-time in-line manufacturing quality control tool for fast detection of mechanically unstable silicon solar cells caused by cracks. The specific objective of Phase II is to move the technology of in-line crack detection from the laboratory level to commercial demonstration through development of a system prototype. The fragility of silicon wafers possessing low mechanical strength is attributed to peripheral and bulk millimeter-length cracks. The research program is based on feasibility results obtained during Phase I, which established that: (i) the Resonance Ultrasonic Vibrations method is applicable to as-cut, processed wafers and finished cells; (ii) the method sensitivity depends on the specific processing step; it is highest in as-cut wafers and lowest in wafers with metallization pattern and grid contacts; (iii) the system is capable of matching the 2.0 seconds per wafer throughput rate of state-of-art solar cell production lines; (iv) finite element modeling provides vibration mode analysis along with peak shift versus crack length and crack location dependence; (v) a high 91% crack rejection rate was confirmed through experimentation and statistical analysis. The Phase II project has the following specific tasks: (i) specify optimal configurations of the in-line system?¢????s component hardware and software; (ii) develop and justify a system prototype that meets major specifications for an in-line crack detection unit, such as high throughput rate, high level of stability, reproducibility of data acquisition and analysis, and high sensitivity with respect to crack length and crack location; (iii) design a system platform that allows easy integration within and adaptation to various solar cell belt-type production lines; (iv) develop a testing protocol providing quality certification of the production-grade system. Commercial Application of the proposed activity consists of bringing to the solar market a new high-tech product based on an innovative solution and patented methodology to contribute to cost reduction of silicon solar module production. The solar industry, with crystalline silicon as a dominant segment, shows outstanding performance, with approximately 25% yearly growth during the last years. Despite a slowdown with only 5.6 GW installations in 2009, solar module production for the 2010 and 2011 years was recovered. According to European Photonics Industry Consortium new solar PV installations grow by 56% compared to 2010 reached 64.7 GW in 2011. Revenues in the PV industry reached a record high of $93 billion in 2011, a 13.4 percent gain over 2010 â?? and 150 percent over 2009. This growth was forecasted to continue in 2013 with double digits growth. The solar industry is economically driven to make solar panels of the highest conversion efficiency and reliability at the lowest production cost. The Resonance Ultrasonic Vibration system addresses critical needs of the silicon-based solar industry by providing a quality control method and tool, which will improve productivity, increase reliability of products and reduce manufacturing cost of solar panels.

  5. Low work function, stable thin films

    DOE Patents [OSTI]

    Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

    2000-01-01T23:59:59.000Z

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  6. NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-09-01T23:59:59.000Z

    Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

  7. And the Award Goes to... Silicon Ink Solar Technology Supported...

    Energy Savers [EERE]

    2008, Innovalight was recently selected for a 3.4M SunShot Initiative award to support companies developing technologies across the solar energy supply chain that can be rapidly...

  8. The analysis and optimization of a spherical silicon solar cell

    E-Print Network [OSTI]

    McKee, William Randall

    1976-01-01T23:59:59.000Z

    the minority carriers. This differential equation must be solved for the appropriate geometry and boundary conditions to find the distribu- tion of photon generated carriers in the solar cell. Knowing this, the current density at any point in a given... by solving eq. (3) subject to boundary conditions (5) and (6). Knowing the distribution of the photon generated carriers, we can find the current ? voltage charac- teristics and the theoretical efficiency of the solar cell. However, before solving...

  9. A study of laser annealing effects in boron ion implanted polycrystalline silicon films

    E-Print Network [OSTI]

    Suh, Inhak Harry

    1982-01-01T23:59:59.000Z

    , large-grain polycrysta11ine silicon has potential use for large volume production of low cost solar cells [1-3] . Polycrystalline silicon is easy to prepare and is compa- tible with monolithic silicon integrated circuit technology; however... of 2O pico second [5]. The MOSFET's fabricated to date on thin films of polycrystalline silicon have also exhibited poor transconductance [5J. It has been reported that the electrical properties of ion implanted polycrystalline silicon can...

  10. Enhanced Efficiency of Light-Trapping Nanoantenna Arrays for Thin Film Solar Cells

    E-Print Network [OSTI]

    Simovski, Constantin R; Voroshilov, Pavel M; Guzhva, Michael E; Belov, Pavel A; Kivshar, Yuri S

    2013-01-01T23:59:59.000Z

    We suggest a novel concept of efficient light-trapping structures for thin-film solar cells based on arrays of planar nanoantennas operating far from plasmonic resonances. The operation principle of our structures relies on the excitation of chessboard-like collective modes of the nanoantenna arrays with the field localized between the neighboring metal elements. We demonstrated theoretically substantial enhancement of solar-cell short-circuit current by the designed light-trapping structure in the whole spectrum range of the solar-cell operation compared to conventional structures employing anti-reflecting coating. Our approach provides a general background for a design of different types of efficient broadband light-trapping structures for thin-film solar-cell technologically compatible with large-area thin-film fabrication techniques.

  11. Polycrystalline Silicon Solar Cells Fabricated by Pulsed Rapid Thermal Annealing of Amorphous Silicon

    E-Print Network [OSTI]

    Lee, I-Syuan

    2014-05-07T23:59:59.000Z

    The PECVD intrinsic, n^(+), and p^(+) a-Si:H thin film deposition processes have been studied by the optical emission spectroscope to monitor the plasma phase chemistry. Process parameters, such as the plasma power, pressure, and gas flow rate...

  12. Simulated Co-Optimization of Crystalline Silicon Solar Cell Throughput and Efficiency Using Continuously Ramping Phosphorus Diffusion Profiles

    E-Print Network [OSTI]

    Morishige, Ashley Elizabeth

    Defect engineering is essential for the production of high-performance silicon photovoltaic (PV) devices with cost-effective solar-grade Si input materials. Phosphorus diffusion gettering (PDG) can mitigate the detrimental ...

  13. High-temperature defect engineering for silicon solar cells : predictive process simulation and synchrotron-based microcharacterization

    E-Print Network [OSTI]

    Fenning, David P

    2013-01-01T23:59:59.000Z

    Efficiency is a major lever for cost reduction in crystalline silicon solar cells, which dominate the photovoltaics market but cannot yet compete subsidy-free in most areas. Iron impurities are a key performance-limiting ...

  14. CONCEPT: N-TYPE SILICON SOLAR CELLS WITH SURFACE-PASSIVATED SCREEN-PRINTED ALUMINUM-ALLOYED REAR EMITTER

    E-Print Network [OSTI]

    THE ALU+ CONCEPT: N-TYPE SILICON SOLAR CELLS WITH SURFACE- PASSIVATED SCREEN-PRINTED ALUMINUM-ALLOYED ABSTRACT Aluminum-doped p-type (Al-p + ) silicon emitters fabricated by means of screen-printing and firing-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the silicon

  15. The effect of encapsulation on the reflectance of photovoltaic modules using textured multicrystalline-silicon solar cells

    SciTech Connect (OSTI)

    Gee, J.M.; Schubert, W.K.; Tardy, H.L.; Hund, T.D. [Sandia National Labs., Albuquerque, NM (United States); Robison, G. [Semiconductor Assembly Network, Prescott Valley, AZ (United States)

    1995-01-01T23:59:59.000Z

    Texturing multicrystalline-silicon cells is a promising technique for reducing reflectance losses. We investigated two methods for texturing multicrystalline-silicon solar cells - anisotropic chemical etch and mechanical dicing saw. Our work emphasized reducing reflectance in the encapsulated module by using optical confinement in the module. We found that optical confinement in the module is very important in the optimization of texture geometries.

  16. HIGH-EFFICIENCY BACK-JUNCTION SILICON SOLAR CELL WITH AN IN-LINE EVAPORATED ALUMINUM FRONT GRID

    E-Print Network [OSTI]

    HIGH-EFFICIENCY BACK-JUNCTION SILICON SOLAR CELL WITH AN IN-LINE EVAPORATED ALUMINUM FRONT GRID M-diffused back-junction emitter. The aluminum front side grid is evaporated in an industrial-type in-thick silicon shadow masks for the in-line evaporation of the aluminum front grid. The masks are fabricated

  17. Microstructured surface design for omnidirectional antireflection coatings on solar cells

    E-Print Network [OSTI]

    Zhou, Weidong

    Microstructured surface design for omnidirectional antireflection coatings on solar cells Weidong to current crystalline silicon solar cells, as well as future thin film, quantum dot, and organic solar cells for light collection is vital in achieving high performance solar cells.1 An ideal antireflec- tion AR

  18. Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon

    DOE Patents [OSTI]

    Kaschmitter, James L. (Pleasanton, CA); Sigmon, Thomas W. (Beaverton, OR)

    1995-01-01T23:59:59.000Z

    A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby to amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenization can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

  19. Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon

    DOE Patents [OSTI]

    Kaschmitter, J.L.; Sigmon, T.W.

    1995-10-10T23:59:59.000Z

    A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby the amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenation can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

  20. Large-area Silicon-Film{trademark} panels and solar cells

    SciTech Connect (OSTI)

    Rand, J.A.; Barnett, A.M.; Checchi, J.C. [AstroPower, Inc., Newark, DE (United States)] [and others

    1997-01-01T23:59:59.000Z

    This report describes AstroPower`s success in improving its material and processing capabilities during the first phase of this 3-year contract through the Photovoltaic Manufacturing Technology (PVMaT) program. Key results include the demonstration of a 14.6%-efficient Silicon-Film{trademark} solar cell. This laboratory result (1.0 cm{sup 2}) provides the direction needed to develop and optimize continuous, in-line production processes. The continuous nature of the Silicon-Film{trademark} sheet fabrication process is being extended into the solar-cell processing sequence. Plans are in place to make the wafer cleaning, gettering, and diffusion steps all continuous during the scope of this program.

  1. Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process

    DOE Patents [OSTI]

    Ruby, Douglas S. (Albuquerque, NM); Schubert, William K. (Albuquerque, NM); Gee, James M. (Albuquerque, NM)

    1999-01-01T23:59:59.000Z

    A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas.

  2. Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process

    DOE Patents [OSTI]

    Ruby, D.S.; Schubert, W.K.; Gee, J.M.

    1999-02-16T23:59:59.000Z

    A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas. 5 figs.

  3. Optimization of oxidation processes to improve crystalline silicon solar cell emitters

    SciTech Connect (OSTI)

    Shen, L.; Liang, Z. C., E-mail: liangzc@mail.sysu.edu.cn; Liu, C. F.; Long, T. J.; Wang, D. L. [School of Physics and Engineering, Institute for Solar Energy Systems, Sun Yat-sen University, 510275, Guangzhou (China)] [School of Physics and Engineering, Institute for Solar Energy Systems, Sun Yat-sen University, 510275, Guangzhou (China)

    2014-02-15T23:59:59.000Z

    Control of the oxidation process is one key issue in producing high-quality emitters for crystalline silicon solar cells. In this paper, the oxidation parameters of pre-oxidation time, oxygen concentration during pre-oxidation and pre-deposition and drive-in time were optimized by using orthogonal experiments. By analyzing experimental measurements of short-circuit current, open circuit voltage, series resistance and solar cell efficiency in solar cells with different sheet resistances which were produced by using different diffusion processes, we inferred that an emitter with a sheet resistance of approximately 70 ?/? performed best under the existing standard solar cell process. Further investigations were conducted on emitters with sheet resistances of approximately 70 ?/? that were obtained from different preparation processes. The results indicate that emitters with surface phosphorus concentrations between 4.96 10{sup 20} cm{sup ?3} and 7.78 10{sup 20} cm{sup ?3} and with junction depths between 0.46 ?m and 0.55 ?m possessed the best quality. With no extra processing, the final preparation of the crystalline silicon solar cell efficiency can reach 18.41%, which is an increase of 0.4%{sub abs} compared to conventional emitters with 50 ?/? sheet resistance.

  4. Present status and future prospects of electro-magnetic casting for silicon solar cells

    SciTech Connect (OSTI)

    Kaneko, Kyojiro; Kawamura, Ritsuo; Misawa, Teruoki [Sumitomo SiTiX Corp., Amagasaki, Hyogo (Japan). Research and Development Center

    1994-12-31T23:59:59.000Z

    The development research of Electro-Magnetic Casting (EMC) for silicon crystal manufacturing technology has been carried out for years with the purpose of providing low cost multicrystalline silicon substrate for solar cells. The EMC technology is a new concept, in which electromagnetic force is utilized to suspend molten metal without contact to crucible wall for melting and solidification of silicon material. At present, the research has been carried out for the development of casting technique with an ingot size of 22 x 22 cm{sup 2} cross section, and the furnace construction for producing a 35 x 35 cm{sup 2} cross sectioned ingot has been begun. Solar cell conversion efficiencies using EMC ingot crystals are ranging from 13--14% at the present, and the quality of EMC material reaches within that of conventional mold casting material. By the improvements of higher casting speed, higher material quality and larger ingot size at the EMC technology, it is expected that a new casting technique for lower cost ingot production will be realized. The paper describes the features of EMC technology, the silicon EMC furnace, crystalline properties of EMC ingots, electric power consumption of EMC, and cost comparison of the EMC and Czychralski pulling methods.

  5. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

    SciTech Connect (OSTI)

    Sopori, B. L.

    2007-08-01T23:59:59.000Z

    The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

  6. Phase 2 of the array automated assembly task for the low cost silicon solar array project. Final report

    SciTech Connect (OSTI)

    Petersen, R.C.

    1980-11-01T23:59:59.000Z

    Studies were conducted on several fundamental aspects of electroless nickel/solder metallization for silicon solar cells. A process proposed by Motorola, which precedes the electroless nickel plating with several steps of palladium plating and heat treatment, was compared directly with single step electroless nickel plating. Work has directed toward answering specific questions concerning the effect of silicon surface oxide on nickel plating, effects of thermal stresses on the metallization, sintering of nickel plated on silicon, and effects of exposure to the plating solution on solar cell characteristics. The Motorola process was compared with simple electroless nickel plating in a series of parallel experiments. Results are presented. (WHK)

  7. Thinner Film Silicon Solar Cells - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron Spin Transition in theTheoreticalEnergy InnovationThin

  8. Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

    DOE Patents [OSTI]

    Toet, Daniel (Mountain View, CA); Sigmon, Thomas W. (Albuquerque, NM)

    2005-08-23T23:59:59.000Z

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  9. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

    DOE Patents [OSTI]

    Toet, Daniel (Mountain View, CA); Sigmon, Thomas W. (Albuquerque, NM)

    2003-01-01T23:59:59.000Z

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  10. Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

    DOE Patents [OSTI]

    Toet, Daniel; Sigmon, Thomas W.

    2004-12-07T23:59:59.000Z

    A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

  11. BACK CONTACT MONOCRYSTALLINE THIN-FILM SILICON SOLAR CELLS FROM THE POROUS SILICON PROCESS

    E-Print Network [OSTI]

    voltage is 633 mV and the short-circuit current density is 28.7 mA/cm 2 . INTRODUCTION Layer transfer surface, an area of 79.2 cm 2 and a cell thickness of 30 m. We reach an efficiency of 13.5 %. The open-circuit

  12. A NOVEL LOW THERMAL BUDGET THIN-FILM POLYSILICON FABRICATION PROCESS FOR LARGE-AREA, HIGH-THROUGHPUT SOLAR CELL PRODUCTION

    SciTech Connect (OSTI)

    Yue Kuo

    2010-08-15T23:59:59.000Z

    A novel thin-film poly-Si fabrication process has been demonstrated. This low thermal budget process transforms the single- and multi-layer amorphous silicon thin films into a poly-Si structure in one simple step over a pulsed rapid thermal annealing process with the enhancement of an ultrathin Ni layer. The complete poly-Si solar cell was fabricated in a short period of time without deteriorating the underneath glass substrate. The unique vertical crystallization process including the mechanism is discussed. Influences of the dopant type and process parameters on crystal structure will be revealed. The poly-Si film structure has been proved using TEM, XRD, Raman, and XPS methods. The poly-Si solar cell structure and the performance have been examined. In principle, the new process is potentially applicable to produce large-area thin-film poly-Si solar cells at a high throughput and low cost. A critical issue in this process is to prevent the excessive dopant diffusion during crystallization. Process parameters and the cell structure have to be optimized to achieve the production goal.

  13. Suppressing light reflection from polycrystalline silicon thin films through surface texturing and silver nanostructures

    SciTech Connect (OSTI)

    Akhter, Perveen [Department of Physics, University at Albany-SUNY, Albany, New York 12222 (United States); Huang, Mengbing, E-mail: mhuang@albany.edu; Kadakia, Nirag; Spratt, William; Malladi, Girish; Bakhru, Hassarum [SUNY College of Nanoscale Science and Engineering, Albany, New York 12203 (United States)

    2014-09-21T23:59:59.000Z

    This work demonstrates a novel method combining ion implantation and silver nanostructures for suppressing light reflection from polycrystalline silicon thin films. Samples were implanted with 20-keV hydrogen ions to a dose of 10{sup 17}/cm{sup 2}, and some of them received an additional argon ion implant to a dose of 5??10{sup 15} /cm{sup 2} at an energy between 30 and 300?keV. Compared to the case with a single H implant, the processing involved both H and Ar implants and post-implantation annealing has created a much higher degree of surface texturing, leading to a more dramatic reduction of light reflection from polycrystalline Si films over a broadband range between 300 and 1200?nm, e.g., optical reflection from the air/Si interface in the AM1.5 sunlight condition decreasing from ?30% with an untextured surface to below 5% for a highly textured surface after post-implantation annealing at 1000?C. Formation of Ag nanostructures on these ion beam processed surfaces further reduces light reflection, and surface texturing is expected to have the benefit of diminishing light absorption losses within large-size (>100?nm) Ag nanoparticles, yielding an increased light trapping efficiency within Si as opposed to the case with Ag nanostructures on a smooth surface. A discussion of the effects of surface textures and Ag nanoparticles on light trapping within Si thin films is also presented with the aid of computer simulations.

  14. Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films

    SciTech Connect (OSTI)

    Kumar, Avishek, E-mail: avishek.kumar@nus.edu.sg, E-mail: dalapatig@imre.a-star.edu.sg [Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Block E3A, #06-01, Singapore 117574 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Law, Felix; Widenborg, Per I. [Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Block E3A, #06-01, Singapore 117574 (Singapore); Dalapati, Goutam K., E-mail: avishek.kumar@nus.edu.sg, E-mail: dalapatig@imre.a-star.edu.sg; Subramanian, Gomathy S.; Tan, Hui R. [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Aberle, Armin G. [Solar Energy Research Institute of Singapore, National University of Singapore, 7 Engineering Drive 1, Block E3A, #06-01, Singapore 117574 and Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore)

    2014-11-01T23:59:59.000Z

    n-type polycrystalline silicon (poly-Si) films with very large grains, exceeding 30??m in width, and with high Hall mobility of about 71.5?cm{sup 2}/V s are successfully prepared by the solid-phase crystallization technique on glass through the control of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The effect of this gas flow ratio on the electronic and structural quality of the n-type poly-Si thin film is systematically investigated using Hall effect measurements, Raman microscopy, and electron backscatter diffraction (EBSD), respectively. The poly-Si grains are found to be randomly oriented, whereby the average area weighted grain size is found to increase from 4.3 to 18??m with increase of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The stress in the poly-Si thin films is found to increase above 900?MPa when the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio is increased from 0.025 to 0.45. Finally, high-resolution transmission electron microscopy, high angle annular dark field-scanning tunneling microscopy, and EBSD are used to identify the defects and dislocations caused by the stress in the fabricated poly-Si films.

  15. Solar Fabrik Silicon Services Ltd formerly OJAS Energy | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit with form HistoryRistmaSinosteelSolar Energy sro Jump to:

  16. Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems

    E-Print Network [OSTI]

    Zhang, Teresa Weirui

    2011-01-01T23:59:59.000Z

    microcrystalline- silicon photovoltaic cell, B) range ofpayback of roof mounted photovoltaic cells. Boustead, I. andmicrocrystalline-silicon photovoltaic cell, B) range of

  17. Production of solar grade (SoG) silicon by refining liquid metallurgical grade (MG) silicon: Annual Report: June 10 1998--October 19, 1999

    SciTech Connect (OSTI)

    Khattak, C.P.; Joyce, D.B.; Schmid, F.

    1999-12-13T23:59:59.000Z

    Pyro-metallurgical refining techniques are being developed for use with molten metallurgical-grade (MG) silicon so that directionally solidified refined MG silicon can be used as solar-grade (SoG) silicon feedstock for photovoltaic applications. The most problematic impurity elements are B and P because of their high segregation coefficients. Refining processes such as evacuation, formation of impurity complexes, oxidation of impurities, and slagging have been effective in removal of impurities from MG silicon. Charge sizes have been scaled up to 60 kg. Impurity analysis of 60-kg charges after refining and directional solidification has shown reduction of most impurities to <1 ppma and B and P to the 10-ppma level. It has been demonstrated that B and P, as well as other impurities, can be reduced from MG silicon. Further reduction of impurities will be necessary for use as SoG silicon. The procedures developed are simple and scaleable to larger charge sizes and carried out in a foundry or MG silicon production plant. Therefore, SoG silicon production using these procedures should be at low cost.

  18. Recent improvements in materials for thin GaAs and multibandgap solar cells

    SciTech Connect (OSTI)

    Benner, J.P.

    1985-05-01T23:59:59.000Z

    The High Efficiency Concepts Program at SERI supports research on III-V compound semiconductors with the objective of achieving the maximum attainable photovoltaic conversion efficiencies for terrestrial solar electric power. The outcome of this research may also affect the future of space photovoltaic cells. While the interest in thin-film, high-efficiency solar cells for terrestrial applications is driven principally by consideration of system costs, such cells would also improve the power density of space power arrays.

  19. Real time intelligent process control system for thin film solar cell manufacturing

    SciTech Connect (OSTI)

    George Atanasoff

    2010-10-29T23:59:59.000Z

    This project addresses the problem of lower solar conversion efficiency and waste in the typical solar cell manufacturing process. The work from the proposed development will lead toward developing a system which should be able to increase solar panel conversion efficiency by an additional 12-15% resulting in lower cost panels, increased solar technology adoption, reduced carbon emissions and reduced dependency on foreign oil. All solar cell manufacturing processes today suffer from manufacturing inefficiencies that currently lead to lower product quality and lower conversion efficiency, increased product cost and greater material and energy consumption. This results in slower solar energy adoption and extends the time solar cells will reach grid parity with traditional energy sources. The thin film solar panel manufacturers struggle on a daily basis with the problem of thin film thickness non-uniformity and other parameters variances over the deposited substrates, which significantly degrade their manufacturing yield and quality. Optical monitoring of the thin films during the process of the film deposition is widely perceived as a necessary step towards resolving the non-uniformity and non-homogeneity problem. In order to enable the development of an optical control system for solar cell manufacturing, a new type of low cost optical sensor is needed, able to acquire local information about the panel under deposition and measure its local characteristics, including the light scattering in very close proximity to the surface of the film. This information cannot be obtained by monitoring from outside the deposition chamber (as traditional monitoring systems do) due to the significant signal attenuation and loss of its scattering component before the reflected beam reaches the detector. In addition, it would be too costly to install traditional external in-situ monitoring systems to perform any real-time monitoring over large solar panels, since it would require significant equipment refurbishing needed for installation of multiple separate ellipsometric systems, and development of customized software to control all of them simultaneously. The proposed optical monitoring system comprises AccuStratas fiber optics sensors installed inside the thin film deposition equipment, a hardware module of different components (beyond the scope of this project) and our software program with iterative predicting capability able to control material bandgap and surface roughness as films are deposited. Our miniature fiber optics monitoring sensors are installed inside the vacuum chamber compartments in very close proximity where the independent layers are deposited (an option patented by us in 2003). The optical monitoring system measures two of the most important parameters of the photovoltaic thin films during deposition on a moving solar panel - material bandgap and surface roughness. In this program each sensor array consists of two fiber optics sensors monitoring two independent areas of the panel under deposition. Based on the monitored parameters and their change in time and from position to position on the panel, the system is able to provide to the equipment operator immediate information about the thin films as they are deposited. This DoE Supply Chain program is considered the first step towards the development of intelligent optical control system capable of dynamically adjusting the manufacturing process on-the-fly in order to achieve better performance. The proposed system will improve the thin film solar cell manufacturing by improving the quality of the individual solar cells and will allow for the manufacturing of more consistent and uniform products resulting in higher solar conversion efficiency and manufacturing yield. It will have a significant impact on the multibillion-dollar thin film solar market. We estimate that the financial impact of these improvements if adopted by only 10% of the industry ($7.7 Billion) would result in about $1.5 Billion in savings by 2015 (at the assumed 20% improvement). This can b

  20. 22nd European Photovoltaic Solar Energy Conference, Milan, 3-7 September 2007 Cu(InGa)Se2 THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    22nd European Photovoltaic Solar Energy Conference, Milan, 3-7 September 2007 Cu(InGa)Se2 THIN from the National Renewable Energy Laboratory and Global Solar Energy, we examined the life-cycle Cd-FILM SOLAR CELLS: COMPARATIVE LIFE-CYCLE ANALYSIS OF BUFFER LAYERS Vasilis M. Fthenakis and Hyung Chul Kim

  1. Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

    DOE Patents [OSTI]

    Wang, Qi; Iwaniczko, Eugene

    2006-10-17T23:59:59.000Z

    A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.

  2. Novel wide band gap materials for highly efficient thin film tandem solar cells

    SciTech Connect (OSTI)

    Brian E. Hardin, Stephen T. Connor, Craig H. Peters

    2012-06-11T23:59:59.000Z

    Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PVâ??s goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a mixture of solution and physical vapor deposition processing, but these films lacked the p-type doping levels that are required to make decent solar cells. Over the course of the project PLANT PV was able to fabricate efficient CIGS solar cells (8.7%) but could not achieve equivalent performance using AIGS. During the nine-month grant PLANT PV set up a variety of thin film characterization tools (e.g. drive-level capacitance profiling) at the Molecular Foundry, a Department of Energy User Facility, that are now available to both industrial and academic researchers via the grant process. PLANT PV was also able to develop the back end processing of thin film solar cells at Lawrence Berkeley National Labs to achieve 8.7% efficient CIGS solar cells. This processing development will be applied to other types of thin film PV cells at the Lawrence Berkeley National Labs. While PLANT PV was able to study AIGS film growth and optoelectronic properties we concluded that AIGS produced using these methods would have a limited efficiency and would not be commercially feasible. PLANT PV did not apply for the Phase II of this grant.

  3. Public release of optimization of metallization scheme for thin emitter wrap-through solar cells for higher efficiency, reduced precious metal costs, and reduced stress.

    SciTech Connect (OSTI)

    Ruby, Douglas Scott; Murphy, Brian (Advent Solar, Inc., Albuquerque, NM); Meakin, David (Advent Solar, Inc., Albuquerque, NM); Dominguez, Jason (Advent Solar, Inc., Albuquerque, NM); Hacke, Peter (Advent Solar, Inc., Albuquerque, NM)

    2008-08-01T23:59:59.000Z

    Back-contact crystalline-silicon photovoltaic solar cells and modules offer a number of advantages, including the elimination of grid shadowing losses, reduced cost through use of thinner silicon substrates, simpler module assembly, and improved aesthetics. While the existing edge tab method for interconnecting and stringing edge-connected back contact cells is acceptably straightforward and reliable, there are further gains to be exploited when you have both contact polarities on one side of the cell. In this work, we produce 'busbarless' emitter wrap-through solar cells that use 41% of the gridline silver (Ag) metallization mass compared to the edge tab design. Further, series resistance power losses are reduced by extraction of current from more places on the cell rear, leading to a fill factor improvement of about 6% (relative) on the module level. Series resistance and current-generation losses associated with large rear bondpads and busbars are eliminated. Use of thin silicon (Si) wafers is enabled because of the reduced Ag metallization mass and by interconnection with conductive adhesives leading to reduced bow. The busbarless cell design interconnected with conductive adhesives passes typical International Electrotechnical Commission damp heat and thermal cycling test.

  4. 62 Journal of Student Research in Environmental Science at Appalachian Site Suitability Analysis for a Solar Farm

    E-Print Network [OSTI]

    Thaxton, Christopher S.

    ]. The semiconductor materials typically used are crystalline-silicone, containing monocrystalline or polycrystalline cells, or thin-film, containing materials including CdTe and copper indium gal- lium selenide, solar modules [2]. Although thin- film solar panels are typically less expensive than c-Si solar panels

  5. Low cost and high performance light trapping structure for thin-film solar cells

    E-Print Network [OSTI]

    Wang, DongLin; Su, Gang

    2015-01-01T23:59:59.000Z

    Nano-scaled dielectric and metallic structures are popular light tapping structures in thin-film solar cells. However, a large parasitic absorption in those structures is unavoidable. Most schemes based on such structures also involve the textured active layers that may bring undesirable degradation of the material quality. Here we propose a novel and cheap light trapping structure based on the prism structured SiO2 for thin-film solar cells, and a flat active layer is introduced purposefully. Such a light trapping structure is imposed by the geometrical shape optimization to gain the best optical benefit. By examining our scheme, it is disclosed that the conversion efficiency of the flat a-Si:H thin-film solar cell can be promoted to exceed the currently certified highest value. As the cost of SiO2-based light trapping structure is much cheaper and easier to fabricate than other materials, this proposal would have essential impact and wide applications in thin-film solar cells.

  6. Method of forming particulate materials for thin-film solar cells

    DOE Patents [OSTI]

    Eberspacher, Chris; Pauls, Karen Lea

    2004-11-23T23:59:59.000Z

    A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

  7. Sputtered Molybdenum Bilayer Back Contact for Copper Indium Diselenide-Based Polycrystalline Thin-Film Solar Cells

    E-Print Network [OSTI]

    Scofield, John H.

    of the CIS or CIGS solar cell structure (not to scale). In these investigations, however, the metal layers-Film Solar Cells John H. Scofield1, A. Duda, and D. Albin National Renewable Energy Laboratory, 1617 Cole-of-the-art polycrystalline copper indium gallium diselenide solar cells with good results. Thin Solid Films, 260 (1), pp. 26

  8. INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS

    E-Print Network [OSTI]

    Atwater, Harry

    INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells enable very high photovoltaic efficiencies by virtue of employing different band gap materials in series- connected tandem cells to access the full solar spectrum. Researchers focused

  9. THIN FILM SOLAR CELLS AND A REVIEW OF RECENT RESULTS ON GaAs By PAUL RAPPAPORT,

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    154. THIN FILM SOLAR CELLS AND A REVIEW OF RECENT RESULTS ON GaAs By PAUL RAPPAPORT, RCA PHYSIQUE APPLIQU?E TOME 1, SEPTEMBRE 1966, PAGE ' Two of the most urgent requirements of future solar cells are lower cost and lighter weight. Pre- sent cost of solar cells is in the s 200 to $ 400/watt range, which

  10. Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells

    E-Print Network [OSTI]

    Deng, Xunming

    Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc- Si) triple-junction solar cell due to its higher optical in an a-Si based multiple- junction solar cell. 1. INTRODUCTION Narrow bandgap amorphous SiGe (a

  11. Thin-film solar cell fabricated on a flexible metallic substrate

    DOE Patents [OSTI]

    Tuttle, John R.; Noufi, Rommel; Hasoon, Falah S.

    2006-05-30T23:59:59.000Z

    A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

  12. Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate

    DOE Patents [OSTI]

    Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

    2006-05-30T23:59:59.000Z

    A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

  13. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01T23:59:59.000Z

    Hahn, H. T. , "Photovoltaic Performance of Amorphous SiliconHahn, H. T. , "Photovoltaic Performance of Amorphous SiliconYS, Hahn HT. Photovoltaic Performance of Amorphous Silicon

  14. Phase 2 of the array automated assembly task for the low cost silicon solar array project. Fifth quarterly report

    SciTech Connect (OSTI)

    Petersen, R.C.; Anderson, J.R.

    1980-01-01T23:59:59.000Z

    This program focuses attention on one key step of a proposed process sequence for mass production of inexpensive silicon solar arrays for terrestrial use. The process step of concern is the metallization of the solar cell. Solarex has proposed that the metallization be accomplished by a single electroless plating of nickel followed by a dip in molten solder, and Solarex manufactures solar cells using this procedure. ing, cleaning and annealing. Motorola has recommended a process which includes the electroless nickel plate and solder dip of the Solarex process, but which precedes these steps with a number of additional steps of palladium plating, cleaning and annealing. Motorola has claimed that these additional steps are necessary to assure proper ohmic contact with the silicon while at the same time avoiding excessive nickel penetration into the silicon. This program comprises a technical comparison of the Solarex and Motorola processes. Progress is reported.

  15. Thin film solar cell configuration and fabrication method

    DOE Patents [OSTI]

    Menezes, Shalini

    2009-07-14T23:59:59.000Z

    A new photovoltaic device configuration based on an n-copper indium selenide absorber and a p-type window is disclosed. A fabrication method to produce this device on flexible or rigid substrates is described that reduces the number of cell components, avoids hazardous materials, simplifies the process steps and hence the costs for high volume solar cell manufacturing.

  16. Laser-induced self-organization in silicon-germanium thin films

    SciTech Connect (OSTI)

    Weizman, M.; Nickel, N. H.; Sieber, I. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, D-12489 Berlin (Germany); Yan, B. [United Solar Ovonic Corp., 1100 West Maple Road, Troy, Michigan 48084 (United States)

    2008-05-01T23:59:59.000Z

    We report on the formation of self-organized structures in thin films of silicon-germanium (Si{sub 1-x}Ge{sub x}) with 0.3

  17. P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology

    E-Print Network [OSTI]

    Boyer, Edmond

    is obtained. P-type and N-type vertical TFTs have shown symmetric electrical characteristics. DifferentP-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low) ABSTRACT P-type and N-type multi-gate vertical thin film transistors (vertical TFTs) have been fabricated

  18. ForPeerReview Hybrid structures of porous silicon and conjugated polymers

    E-Print Network [OSTI]

    Asscher, Micha

    based solar cells suffer from a poor efficiency-to-cost ratio (usually defined in units of $ per k polymers that are suitable for solar cell applications. Meso-porous silicon substrates with relatively compounds require in- terfacing with other semiconductors to create hybrid, thin film solar cells (sometime

  19. Lithography-free sub-100nm nanocone array antireflection layer for low-cost silicon solar cell

    E-Print Network [OSTI]

    Xu, Zhida

    2014-01-01T23:59:59.000Z

    High density and uniformity sub-100nm surface oxidized silicon nanocone forest structure is created and integrated onto the existing texturization microstructures on photovoltaic device surface by a one-step high throughput plasma enhanced texturization method. We suppressed the broadband optical reflection on chemically textured grade-B silicon solar cells for up to 70.25% through this nanomanufacturing method. The performance of the solar cell is improved with the short circuit current increased by 7.1%, fill factor increased by 7.0%, conversion efficiency increased by 14.66%. Our method demonstrates the potential to improve the photovoltaic device performance with low cost high and throughput nanomanufacturing technology.

  20. Effects of Radiative Diffusion on Thin Flux Tubes in Turbulent Solar-like Convection

    E-Print Network [OSTI]

    Weber, Maria A

    2015-01-01T23:59:59.000Z

    We study the combined effects of convection and radiative diffusion on the evolution of thin magnetic flux tubes in the solar interior. Radiative diffusion is the primary supplier of heat to convective motions in the lower convection zone, and it results in a heat input per unit volume of magnetic flux tubes that has been ignored by many previous thin flux tube studies. We use a thin flux tube model subject to convection taken from a rotating spherical shell of turbulent, solar-like convection as described by Weber, Fan, and Miesch (2011, Astrophys. J., 741, 11; 2013, Solar Phys., 287, 239), now taking into account the influence of radiative heating on flux tubes of large-scale active regions. Our simulations show that flux tubes of less than or equal to 60 kG subject to solar-like convective flows do not anchor in the overshoot region, but rather drift upward due to the increased buoyancy of the flux tube earlier in its evolution as a result of the inclusion of radiative diffusion. Flux tubes of magnetic fie...

  1. Simulations of solar cell absorption enhancement using resonant modes

    E-Print Network [OSTI]

    Grandidier, Jonathan

    Simulations of solar cell absorption enhancement using resonant modes of a nanosphere array Jonathan Grandidier Michael G. Deceglie Dennis M. Callahan Harry A. Atwater #12;Simulations of solar cell for enhancing the absorption of thin-film amorphous silicon solar cells using periodic arrangements of resonant

  2. Reaching Grid Parity Using BP Solar Crystalline Silicon Technology: A Systems Class Application

    SciTech Connect (OSTI)

    Cunningham, Daniel W; Wohlgemuth, John; Carlson, David E; Clark, Roger F; Gleaton, Mark; Posbic, John P; Zahler, James

    2010-12-06T23:59:59.000Z

    The primary target market for this program was the residential and commercial PV markets, drawing on BP Solar's premium product and service offerings, brand and marketing strength, and unique routes to market. These two markets were chosen because: (1) in 2005 they represented more than 50% of the overall US PV market; (2) they are the two markets that will likely meet grid parity first; and (3) they are the two market segments in which product development can lead to the added value necessary to generate market growth before reaching grid parity. Federal investment in this program resulted in substantial progress toward the DOE TPP target, providing significant advancements in the following areas: (1) Lower component costs particularly the modules and inverters. (2) Increased availability and lower cost of silicon feedstock. (3) Product specifically developed for residential and commercial applications. (4) Reducing the cost of installation through optimization of the products. (5) Increased value of electricity in mid-term to drive volume increases, via the green grid technology. (6) Large scale manufacture of PV products in the US, generating increased US employment in manufacturing and installation. To achieve these goals BP Solar assembled a team that included suppliers of critical materials, automated equipment developers/manufacturers, inverter and other BOS manufacturers, a utility company, and University research groups. The program addressed all aspects of the crystalline silicon PV business from raw materials (particularly silicon feedstock) through installation of the system on the customers site. By involving the material and equipment vendors, we ensured that supplies of silicon feedstock and other PV specific materials like encapsulation materials (EVA and cover glass) will be available in the quantities required to meet the DOE goals of 5 to 10 GW of installed US PV by 2015 and at the prices necessary for PV systems to reach grid parity in 2015. This final technical report highlights the accomplishments of the BP Solar technical team from 2006 to the end of the project in February 2010. All the main contributors and team members are recognized for this accomplishment and their endeavors are recorded in the twelve main tasks described here.

  3. Silicon materials task of the low cost solar array project (Phase III). Effects of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 2: analysis of impurity behavior

    SciTech Connect (OSTI)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-23T23:59:59.000Z

    The object of this phase of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the properties of silicon and on the performance of terrestrial silicon solar cells. The study encompassed topics including thermochemical (gettering) treatments, base doping concentration, base doping type (n vs. p), grain boundary-impurity interaction, non-uniformity of impurity distribution, long term effects of impurities, as well as synergic and complexing phenomena. The program approach consists in: (1) the growth of doubly and multiply-doped silicon single crystals containing a baseline boron or phosphorus dopant and specific impurities which produce deep levels in the forbidden band gap; (2) assessment of these crystals by chemical, microstructural, electrical and solar cell tests; (3) correlation of the impurity type and concentration with crystal quality and device performance; and (4) delineation of the role of impurities and processing on subsequent silicon solar cell performance. The overall results reported are based on the assessment of nearly 200 silicon ingots. (WHK)

  4. Structural characterisation of BaTiO{sub 3} thin films deposited on SrRuO{sub 3}/YSZ buffered silicon substrates and silicon microcantilevers

    SciTech Connect (OSTI)

    Colder, H.; Jorel, C., E-mail: corentin.jorel@unicaen.fr; Mchin, L. [GREYC, UMR 6072, CNRS, ENSICAEN, UCBN, 6 bd du Marchal Juin, 14050 Caen Cedex (France); Domengs, B. [LAMIPS, CRISMAT-NXP Semiconductors-Presto Engineering laboratory, CNRS-UMR 6508, ENSICAEN, UCBN, 2 rue de la Girafe, 14 000 Caen (France); Marie, P.; Boisserie, M. [CIMAP, UMR 6252, CNRS, ENSICAEN, UCBN, CEA, 6 bd du Marchal Juin, 14050 Caen Cedex (France); Guillon, S.; Nicu, L. [LAAS, CNRS, Univ de Toulouse, 7 avenue du Colonel Roche, 31400 Toulouse (France); Galdi, A. [GREYC, UMR 6072, CNRS, ENSICAEN, UCBN, 6 bd du Marchal Juin, 14050 Caen Cedex (France); Department of Industrial Engineering, CNR-SPIN Salerno, Universit di Salerno, 84084 Fisciano, Salerno (Italy)

    2014-02-07T23:59:59.000Z

    We report on the progress towards an all epitaxial oxide layer technology on silicon substrates for epitaxial piezoelectric microelectromechanical systems. (101)-oriented epitaxial tetragonal BaTiO{sub 3} (BTO) thin films were deposited at two different oxygen pressures, 5.10{sup ?2} mbar and 5.10{sup ?3} mbar, on SrRuO{sub 3}/Yttria-stabilized zirconia (YSZ) buffered silicon substrates by pulsed laser deposition. The YSZ layer full (001) orientation allowed the further growth of a fully (110)-oriented conductive SrRuO{sub 3} electrode as shown by X-ray diffraction. The tetragonal structure of the BTO films, which is a prerequisite for the piezoelectric effect, was identified by Raman spectroscopy. In the BTO film deposited at 5.10{sup ?2} mbar strain was mostly localized inside the BTO grains whereas at 5.10{sup ?3} mbar, it was localized at the grain boundaries. The BTO/SRO/YSZ layers were finally deposited on Si microcantilevers at an O{sub 2} pressure of 5.10{sup ?3} mbar. The strain level was low enough to evaluate the BTO Young modulus. Transmission electron microscopy (TEM) was used to investigate the epitaxial quality of the layers and their epitaxial relationship on plain silicon wafers as well as on released microcantilevers, thanks to Focused-Ion-Beam TEM lamella preparation.

  5. HIGH EFFICIENCY AMORPHOUS SILICON GERMANIUM SOLAR CELLS X. Liao, W. Du, X. Yang, H. Povolny, X. Xiang and X. Deng

    E-Print Network [OSTI]

    Deng, Xunming

    HIGH EFFICIENCY AMORPHOUS SILICON GERMANIUM SOLAR CELLS X. Liao, W. Du, X. Yang, H. Povolny, X ABSTRACT We report high-efficiency single-junction a-SiGe n-i-p solar cells deposited using rf PECVD-area efficiencies have been improved to 12.5-13.0% and 10.4%, respectively, for 0.25 cm 2 a-SiGe cells

  6. Characterization of the Electronic and Chemical Structure at the Thin Film Solar Cell Interfaces: June 2005 -- June 2009

    SciTech Connect (OSTI)

    Heske, C.

    2009-09-01T23:59:59.000Z

    Study using photoelectron spectroscopy, inverse photoemission, and X-ray absorption and emission to derive the electronic structure of interfaces in CIGSS and CdTe thin-film solar cells.

  7. Inks for Ink Jet Printed Contacts for High Performance Silicon Solar Cells: Cooperative Research and Development Final Report, CRADA No. CRD-06-199

    SciTech Connect (OSTI)

    Ginley, D.

    2013-01-01T23:59:59.000Z

    The work under the proposed CRADA will be a joint effort by BP Solar and NREL to develop new types of high performance inks for high quality contacts to silicon solar cells. NREL will develop inks that have electronic properties that will allow the formation of high quality ohmic contacts to n- and p-type crystalline silicon, and BP Solar will evaluate these contacts in test contact structures.

  8. Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells

    E-Print Network [OSTI]

    Kim, Yong Jung

    -i-n solar cells Chang Hyun Lee and Koeng Su Lim Department of Electrical Engineering, Korea Advanced this film, amorphous silicon (a-Si solar cells with a novel p-a-DLC:H/p-a-SiC double p-layer structure were as window materials for amorphous silicon (a-Si based solar cells.14 In using such films as a p layer

  9. Control of morphology for enhanced electronic transport in PECVD-grown a-Si : H Thin Films

    E-Print Network [OSTI]

    Castro Galnares, Sebastin

    2010-01-01T23:59:59.000Z

    Solar cells have become an increasingly viable alternative to traditional, pollution causing power generation methods. Although crystalline silicon (c-Si) modules make up most of the market, thin films such as hydrogenated ...

  10. Solar Chemical Peculiarities?

    E-Print Network [OSTI]

    Carlos Allende Prieto

    2006-12-08T23:59:59.000Z

    Several investigations of FGK stars in the solar neighborhood have suggested that thin-disk stars with an iron abundance similar to the Sun appear to show higher abundances of other elements, such as silicon, titanium, or nickel. Offsets could arise if the samples contain stars with ages, mean galactocentric distances, or kinematics, that differ on average from the solar values. They could also arise due to systematic errors in the abundance determinations, if the samples contain stars that are different from the Sun regarding their atmospheric parameters. We re-examine this issue by studying a sample of 80 nearby stars with solar-like colors and luminosities. Among these solar "analogs", the objects with solar iron abundances exhibit solar abundances of carbon, silicon, calcium, titanium and nickel.

  11. Atmospheric performance of the special-purpose Solar Energy Research Institute (SERI) thin-airfoil family

    SciTech Connect (OSTI)

    Tangler, J; Smith, B; Jager, D; Olsen, T

    1990-09-01T23:59:59.000Z

    The Solar Energy Research Institute (SERI), in cooperation with SeaWest Energy Group, has completed extensive atmospheric testing of the special-purpose SERI thin-airfoil family during the 1990 wind season. The purpose of this test program was to experimentally verify the predicted performance characteristics of the thin-airfoil family on a geometrically optimized blade, and to compare it to original-equipment blades under atmospheric wind conditions. The tests were run on two identical Micon 65/13 horizontal-axis wind turbines installed side-by-side in a wind farm. The thin-airfoil family 7.96 m blades were installed on one turbine, and AeroStar 7.41 m blades were installed on the other. This paper presents final performance results of the side-by-side comparative field test for both clean and dirty blade conditions. 7 refs., 11 figs., 1 tab.

  12. ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR CELLS

    E-Print Network [OSTI]

    ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR to those measured on reference cells passivated by an aluminum-annealed thermal SiO2, while those of the Al of aluminum ox- ide (Al2O3) grown by atomic layer deposition (ALD) pro- vide an excellent level of sur

  13. Microscopic Measurements of Electrical Potential in Hydrogenated Nanocrystalline Silicon Solar Cells: Preprint

    SciTech Connect (OSTI)

    Jiang, C. S.; Moutinho, H. R.; Reedy, R. C.; Al-Jassim, M. M.; Yan, B.; Yue, G.; Sivec, L.; Yang, J.; Guha, S.; Tong, X.

    2012-04-01T23:59:59.000Z

    We report on a direct measurement of electrical potential and field profiles across the n-i-p junction of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells, using the nanometer-resolution potential imaging technique of scanning Kelvin probe force microscopy (SKPFM). It was observed that the electric field is nonuniform across the i layer. It is much higher in the p/i region than in the middle and the n/i region, illustrating that the i layer is actually slightly n-type. A measurement on a nc-Si:H cell with a higher oxygen impurity concentration shows that the nonuniformity of the electric field is much more pronounced than in samples having a lower O impurity, indicating that O is an electron donor in nc-Si:H materials. This nonuniform distribution of electric field implies a mixture of diffusion and drift of carrier transport in the nc-Si:H solar cells. The composition and structure of these nc-Si:H cells were further investigated by using secondary-ion mass spectrometry and Raman spectroscopy, respectively. The effects of impurity and structural properties on the electrical potential distribution and solar cell performance are discussed.

  14. Optimization of the optical properties of nanostructured silicon surfaces for solar cell applications

    SciTech Connect (OSTI)

    Zhou, Di; Pennec, Y.; Djafari-Rouhani, B.; Lambert, Y.; Deblock, Y.; Stivenard, D., E-mail: didier.stievenard@isen.fr [Institut d'Electronique et de Microlectronique et de Nanotechnologies, IEMN, (CNRS, UMR 8520), Groupe de Physique, Cit scientifique, avenue Poincar, 59652 Villeneuve d'Ascq (France); Cristini-Robbe, O. [PHLAM, UMR8523, Universit de Lille 1, 59652 Villeneuve d'Asq Cedex (France); Xu, T. [Key Laboratory of Advanced Display and System Application, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China); Faucher, M. [Institut d'Electronique et de Microlectronique et de Nanotechnologies, IEMN, (CNRS, UMR 8520), Groupe NAM6, Cit scientifique, avenue Poincar, 59652 Villeneuve d'Asq (France)

    2014-04-07T23:59:59.000Z

    Surface nanostructuration is an important challenge for the optimization of light trapping in solar cell. We present simulations on both the optical properties and the efficiency of micro pillarsMPsor nanoconesNCssilicon based solar cells together with measurements on their associated optical absorption. We address the simulation using the Finite Difference Time Domain method, well-adapted to deal with a periodic set of nanostructures. We study the effect of the period, the bottom diameter, the top diameter, and the height of the MPs or NCs on the efficiency, assuming that one absorbed photon induces one exciton. This allows us to give a kind of abacus involving all the geometrical parameters of the nanostructured surface with regard to the efficiency of the associated solar cell. We also show that for a given ratio of the diameter over the period, the best efficiency is obtained for small diameters. For small lengths, MPs are extended to NCs by changing the angle between the bottom surface and the vertical face of the MPs. The best efficiency is obtained for an angle of the order of 70. Finally, nanostructures have been processed and allow comparing experimental results with simulations. In every case, a good agreement is found.

  15. An Unconventional Route to High-Efficiency Dye-Sensitized Solar Cells via Embedding Graphitic Thin Films into TiO2 Nanoparticle

    E-Print Network [OSTI]

    Lin, Zhiqun

    An Unconventional Route to High-Efficiency Dye-Sensitized Solar Cells via Embedding Graphitic Thin into the conventional dye- sensitized solar cells (DSSCs), resulting in a remarkably improved cell efficiency due to its followed by direct carbonization. For dye-sensitized TiO2 based solar cells containing carbon/TiO2 thin

  16. Structural and chemical investigations of CBD-and PVD-CdS buffer layers and interfaces in Cu(In,Ga)Se2-based thin film solar cells

    E-Print Network [OSTI]

    Romeo, Alessandro

    (In,Ga)Se2-based thin film solar cells D. Abou-Rasa,b,*, G. Kostorza , A. Romeob,1 , D. Rudmannb , A Available online 8 December 2004 Abstract It is known that high-efficiency thin film solar cells based on Cu in efficiencies of solar cells with CBD- and PVD-CdS buffer layers can partly be explained by referring

  17. Growth direction of oblique angle electron beam deposited silicon monoxide thin films identified by optical second-harmonic generation

    SciTech Connect (OSTI)

    Vejling Andersen, Sren; Lund Trolle, Mads; Pedersen, Kjeld [Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, DK-9220 Aalborg st (Denmark)] [Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, DK-9220 Aalborg st (Denmark)

    2013-12-02T23:59:59.000Z

    Oblique angle deposited (OAD) silicon monoxide (SiO) thin films forming tilted columnar structures have been characterized by second-harmonic generation. It was found that OAD SiO leads to a rotationally anisotropic second-harmonic response, depending on the optical angle of incidence. A model for the observed dependence of the second-harmonic signal on optical angle of incidence allows extraction of the growth direction of OAD films. The optically determined growth directions show convincing agreement with cross-sectional scanning electron microscopy images. In addition to a powerful characterization tool, these results demonstrate the possibilities for designing nonlinear optical devices through SiO OAD.

  18. THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te the theore- tical optimum for conversion of solar energy by the intrinsic photovoltaic effect and lower degradation rates to penetrating radiation and 2) shorter minority carrier lifetimes are per

  19. PROCEEDINGS O F THE IEEE, VOL.56, NO. 1, JANUARY196837 [`I J. J. Wysocki,"Lithium-doped radiation-resistant silicon solar

    E-Print Network [OSTI]

    Teich, Malvin C.

    ,"Lithium-doped radiation-resistant silicon solar cells," IEEE Trans. Nuclear Science. vol.NS-13, pp. 168-173, December 1966. X-713-6548, November1965. 161 ~ , "Thermalannealing of radiation damagein solar cells," ['I R. L. Tech. J.,vol. 41, pp.1573-1588,September 1962. ["I R. L. Statler, "Radiation damage insilicon solar

  20. Mat. Res. Soc. Symp. Proc. Vol. 609 2000 Materials Research Society Preparation of Microcrystalline Silicon Based Solar Cells at High i-layer

    E-Print Network [OSTI]

    Deng, Xunming

    of Microcrystalline Silicon Based Solar Cells at High i-layer Deposition Rates Using a Gas Jet Technique S.J. Jones-layers for nip single-junction solar cells. The high deposition rates allow for fabrication of the required plays in determining the device performance. INTRODUCTION c-Si-based solar cells are an intriguing

  1. Eighth workshop on crystalline silicon solar cell materials and processes: Extended abstracts and papers

    SciTech Connect (OSTI)

    NONE

    1998-08-01T23:59:59.000Z

    The theme of this workshop is Supporting the Transition to World Class Manufacturing. This workshop provides a forum for an informal exchange of information between researchers in the photovoltaic and non-photovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helps establish a knowledge base that can be used for improving device fabrication processes to enhance solar-cell performance and reduce cell costs. It also provides an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research. The workshop format features invited review presentations, panel discussions, and two poster sessions. The poster sessions create an opportunity for both university and industrial researchers to present their latest results and provide a natural forum for extended discussions and technical exchanges.

  2. High-performance hybrid organic-inorganic solar cell based on planar n-type silicon

    SciTech Connect (OSTI)

    Chi, Dan [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Qi, Boyuan; Wang, Jizheng [Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Qu, Shengchun, E-mail: qsc@semi.ac.cn; Wang, Zhanguo [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-05-12T23:59:59.000Z

    Hybrid organic-inorganic solar cells were fabricated by spin coating the hole transporting conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film on n-type crystalline silicon (n-Si). By incorporating different additives into the PEDOT:PSS, the conductivity and wettability of PEDOT:PSS film are markedly improved, and the device performance is greatly enhanced accordingly. To further optimize the device performance, poly(3-hexylthiophene) (P3HT) layer was inserted between the n-Si and PEDOT:PSS layer. The P3HT layer blocks electrons from diffusing to the PEDOT:PSS, and hence reduces recombination at the anode side. The device eventually exhibits a high power conversion efficiency of 11.52%.

  3. Dual mechanical behaviour of hydrogen in stressed silicon nitride thin films

    SciTech Connect (OSTI)

    Volpi, F., E-mail: fabien.volpi@simap.grenoble-inp.fr; Braccini, M.; Pasturel, A. [Univ. Grenoble Alpes, SIMAP, F-38000 Grenoble (France); CNRS, SIMAP, F-38000 Grenoble (France); Devos, A. [IEMN, UMR 8520 CNRS, Avenue Poincarr - CS 60069 - 59652 Villeneuve d'Ascq Cedex (France); Raymond, G. [Univ. Grenoble Alpes, SIMAP, F-38000 Grenoble (France); CNRS, SIMAP, F-38000 Grenoble (France); STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); Morin, P. [STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France)

    2014-07-28T23:59:59.000Z

    In the present article, we report a study on the mechanical behaviour displayed by hydrogen atoms and pores in silicon nitride (SiN) films. A simple three-phase model is proposed to relate the physical properties (stiffness, film stress, mass density, etc.) of hydrogenated nanoporous SiN thin films to the volume fractions of hydrogen and pores. This model is then applied to experimental data extracted from films deposited by plasma enhanced chemical vapour deposition, where hydrogen content, stress, and mass densities range widely from 11% to 30%, ?2.8 to 1.5?GPa, and 2.0 to 2.8?g/cm{sup 3}, respectively. Starting from the conventional plotting of film's Young's modulus against film porosity, we first propose to correct the conventional calculation of porosity volume fraction with the hydrogen content, thus taking into account both hydrogen mass and concentration. The weight of this hydrogen-correction is found to evolve linearly with hydrogen concentration in tensile films (in accordance with a simple mass correction of the film density calculation), but a clear discontinuity is observed toward compressive stresses. Then, the effective volume occupied by hydrogen atoms is calculated taking account of the bond type (N-H or Si-H bonds), thus allowing a precise extraction of the hydrogen volume fraction. These calculations applied to tensile films show that both volume fractions of hydrogen and porosity are similar in magnitude and randomly distributed against Young's modulus. However, the expected linear dependence of the Young's modulus is clearly observed when both volume fractions are added. Finally, we show that the stiffer behaviour of compressive films cannot be only explained on the basis of this (hydrogen?+?porosity) volume fraction. Indeed this stiffness difference relies on a dual mechanical behaviour displayed by hydrogen atoms against the film stress state: while they participate to the stiffness in compressive films, hydrogen atoms mainly behave like pores in tensile films where they do not participate to the film stiffness.

  4. Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells

    E-Print Network [OSTI]

    Sites, James R.

    1 Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells, Setagaya-ku, Tokyo 157-8572, Japan (Received ) KEYWORDS: ZnS buffer, Cu(In,Ga)Se2, thin-film solar cells alternative to CdS in polycrystalline thin-film Cu(In1-xGax)Se2 (CIGS) solar cells. Cells with efficiency

  5. Generation of low work function, stable compound thin films by laser ablation

    DOE Patents [OSTI]

    Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

    2001-01-01T23:59:59.000Z

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  6. Functional requirements for component films in a solar thin-film photovoltaic/thermal panel

    SciTech Connect (OSTI)

    Johnston, David [Power and Energy Research Group, School of Engineering, Northumbria University, Ellison Place, Newcastle upon Tyne NE1 8ST (United Kingdom)

    2010-03-15T23:59:59.000Z

    The functional requirements of the component films of a solar thin-film photovoltaic/thermal panel were considered. Particular emphasis was placed on the new functions, that each layer is required to perform, in addition to their pre-existing functions. The cut-off wavelength of the window layer, required for solar selectivity, can be achieved with charge carrier concentrations typical of photovoltaic devices, and thus does not compromise electrical efficiency. The upper (semiconductor) absorber layer has a sufficiently high thermal conductivity that there is negligible temperature difference across the film, and thus negligible loss in thermal performance. The lower (cermet) absorber layer can be fabricated with a high ceramic content, to maintain high solar selectivity, without significant increase in electrical resistance. A thin layer of molybdenum-based cermet at the top of this layer can provide an Ohmic contact to the upper absorber layer. A layer of aluminium nitride between the metal substrate and the back metal contact can provide electrical isolation to avoid short-circuiting of series-connected cells, while maintaining a thermal path to the metal substrate and heat extraction systems. Potential problems of differential contraction of heated films and substrates were identified, with a recommendation that fabrication processes, which avoid heating, are preferable. (author)

  7. Electron and hole drift mobility measurements on thin film CdTe solar cells Qi Long, Steluta A. Dinca, E. A. Schiff, Ming Yu, and Jeremy Theil

    E-Print Network [OSTI]

    Schiff, Eric A.

    .1063/1.2220491 Lock-in thermography and nonuniformity modeling of thin-film CdTe solar cells Appl. Phys. Lett. 84, 729

  8. Silicon materials task of the low cost solar array project (Phase III). Effect of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 1: characterization methods for impurities in silicon and impurity effects data base

    SciTech Connect (OSTI)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-01T23:59:59.000Z

    The object of Phase III of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells. The study encompassed a variety of tasks including: (1) a detailed examination of thermal processing effects, such as HCl and POCl/sub 3/ gettering on impurity behavior, (2) completion of the data base and modeling for impurities in n-base silicon, (3) extension of the data base on p-type material to include elements likely to be introduced during the production, refining, or crystal growth of silicon, (4) effects on cell performance on anisotropic impurity distributions in large CZ crystals and silicon webs, and (5) a preliminary assessment of the permanence of the impurity effects. Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. For example, discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, and conventional solar cell I-V techniques, as well as descriptions of silicon chemical analysis are included. Considerable data are tabulated on the composition, electrical, and solar cell characteristics of impurity-doped silicon.

  9. Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems

    E-Print Network [OSTI]

    Zhang, Teresa Weirui

    2011-01-01T23:59:59.000Z

    of photovoltaic modules: comparison of mc-si, ingapand ingap/mc-si solar modules. Progress in Photovoltaics:

  10. Thin Film Solar Cells Derived from Sintered Semiconductor Quantum Dots: Cooperative Research and Development Final Report, CRADA number CRD-07-00226

    SciTech Connect (OSTI)

    Ginley, D. S.

    2010-07-01T23:59:59.000Z

    The NREL/Evident team will develop techniques to fabricate thin film solar cells where the absorption layers comprising the solar cells are derived from sintered semiconductor quantum dots.

  11. Experimental Investigation of Size Effects on the Thermal Conductivity of Silicon-Germanium Alloy Thin Films

    E-Print Network [OSTI]

    Cheaito, Ramez

    We experimentally investigate the role of size effects and boundary scattering on the thermal conductivity of silicon-germanium alloys. The thermal conductivities of a series of epitaxially grown Si[subscript 1-x] Ge[subscript ...

  12. Identification of critical stacking faults in thin-film CdTe solar cells

    SciTech Connect (OSTI)

    Yoo, Su-Hyun; Walsh, Aron, E-mail: a.walsh@bath.ac.uk [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Butler, Keith T. [Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Soon, Aloysius [Global E3 Institute, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Abbas, Ali; Walls, John M., E-mail: j.m.wall@loughborough.ac.uk [Centre for Renewable Energy Systems Technology, School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2014-08-11T23:59:59.000Z

    Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl{sub 2} is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies.

  13. Modeling of multilayer SiGe based thin film solar cells

    SciTech Connect (OSTI)

    Christoffel, E.; Debarge, L.; Slaoui, A. [CNRS, Strasbourg (France). Lab. PHASE

    1997-12-31T23:59:59.000Z

    Simulations using PC1D have been performed to demonstrate the viability of crystalline SiGe alloys implementation in thin film solar cells. An optimized structure would consist of a p-type doped SiGe layer, capped with a Si p-n junction at the top, and a Si BSF at the bottom. Further refinements in such cell structure include a gradual compositional profile of the SiGe alloy layer. Compared to a conventional Si thin film cell, up to 5% relative efficiency gain is demonstrated, for a 20 {micro}m thick SiGe layer with less than 10% Ge content, p-type doped to more than 1 10{sup 17} cm{sup {minus}3}, and a realistic minority carriers diffusion length of the order of the layer thickness.

  14. Light trapping in solar cells at the extreme coupling limit Ali Naqavi,1,2,

    E-Print Network [OSTI]

    Petitpierre, Claude

    Light trapping in solar cells at the extreme coupling limit Ali Naqavi,1,2, * Franz-Josef Haug,1 thin film silicon solar cells in the low absorption regime. We consider simultaneously wavelength.1950, 130.2790. 1. INTRODUCTION Enhancing light absorption in solar cells has been a topic of research

  15. Simulations of solar cell absorption enhancement using resonant modes of a nanosphere array

    E-Print Network [OSTI]

    Grandidier, Jonathan

    Simulations of solar cell absorption enhancement using resonant modes of a nanosphere array an approach for enhancing the absorption of thin-film amorphous silicon solar cells using periodic on the temporal coupled mode theory. Keywords: Resonant Dielectric Structures, Solar cells, Nanospheres

  16. A non-resonant dielectric metamaterial for enhancement of thin-film solar cells

    E-Print Network [OSTI]

    Omelyanovich, Mikhail; Simovski, Constantin

    2014-01-01T23:59:59.000Z

    Recently, we have suggested dielectric metamaterial composed as an array of submicron dielectric spheres located on top of an amorphous thin-film solar cell. We have theoretically shown that this metamaterial can decrease the reflection and simultaneously can suppress the transmission through the photovoltaic layer because it transforms the incident plane wave into a set of focused light beams. This theoretical concept has been strongly developed and experimentally confirmed in the present paper. Here we consider the metamaterial for oblique angle illumination, redesign the solar cell and present a detailed experimental study of the whole structure. In contrast to our precedent theoretical study we show that our omnidirectional light-trapping structure may operate better than the optimized flat coating obtained by plasma-enhanced chemical vapor deposition.

  17. Plasmonic light trapping in thin-film Si solar cells This article has been downloaded from IOPscience. Please scroll down to see the full text article.

    E-Print Network [OSTI]

    Polman, Albert

    of energy. Reducing the overall cost per watt is thus one of the major challenges in solar cell research. The price of an installed solar cell includes both material and processing costs as well as system costs solar cells, material costs account for 40% of the final module price. Recently, thin- film solar cell

  18. Multilayer nanoparticle arrays for broad spectrum absorption enhancement in thin film solar cells

    E-Print Network [OSTI]

    Krishnan, Aravind; Krishna, Siva Rama; Khan, Mohammed Zafar Ali

    2013-01-01T23:59:59.000Z

    In this paper, we present a theoretical study on the absorption efficiency enhancement of a thin film amorphous Silicon (a-Si) photovoltaic cell over a broad spectrum of wavelengths using multiple nanoparticle arrays. The light absorption efficiency is enhanced in the lower wavelengths by a nanoparticle array on the surface and in the higher wavelengths by another nanoparticle array embedded in the active region. The efficiency at intermediate wavelengths is enhanced by the constructive interference of plasmon coupled light. We optimize this design by tuning the radius of particles in both arrays, the period of the array and the distance between the two arrays. The optimization results in 61.44% increase in total quantum efficiency for a 500 nm thick a-Si substrate.

  19. Spatially resolved determination of the short-circuit current density of silicon solar cells via lock-in thermography

    SciTech Connect (OSTI)

    Fertig, Fabian, E-mail: fabian.fertig@ise.fraunhofer.de; Greulich, Johannes; Rein, Stefan [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, D-79110 Freiburg (Germany)

    2014-05-19T23:59:59.000Z

    We present a spatially resolved method to determine the short-circuit current density of crystalline silicon solar cells by means of lock-in thermography. The method utilizes the property of crystalline silicon solar cells that the short-circuit current does not differ significantly from the illuminated current under moderate reverse bias. Since lock-in thermography images locally dissipated power density, this information is exploited to extract values of spatially resolved current density under short-circuit conditions. In order to obtain an accurate result, one or two illuminated lock-in thermography images and one dark lock-in thermography image need to be recorded. The method can be simplified in a way that only one image is required to generate a meaningful short-circuit current density map. The proposed method is theoretically motivated, and experimentally validated for monochromatic illumination in comparison to the reference method of light-beam induced current.

  20. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual technical report, April 1, 1995--March 31, 1996

    SciTech Connect (OSTI)

    Gordon, R.G.; Sato, H.; Liang, H.; Liu, X.; Thornton, J. [Harvard Univ., Cambridge, MA (United States)

    1996-08-01T23:59:59.000Z

    The general objective is to develop methods to deposit materials which can be used to make more efficient solar cells. The work is organized into three general tasks: Task 1. Develop improved methods for depositing and using transparent conductors of fluorine-doped zinc oxide in amorphous silicon solar cells Task 2. Deposit and evaluate titanium oxide as a reflection-enhancing diffusion barrier between amorphous silicon and an aluminum or silver back-reflector. Task 3. Deposit and evaluate electrically conductive titanium oxide as a transparent conducting layer on which more efficient and more stable superstrate cells can be deposited. About one-third of the current project resources are allocated to each of these three objectives.

  1. European Photovoltaic Solar Energy Conference, Frankfurt, Germany, 24-28 September 2012, 2AO.2.4 HIGH EFFICIENCY BACK-CONTACT BACK-JUNCTION SILICON SOLAR CELLS WITH CELL

    E-Print Network [OSTI]

    27th European Photovoltaic Solar Energy Conference, Frankfurt, Germany, 24-28 September 2012, 2AO.2 cost of energy in photovoltaics can be achieved by increasing the conversion efficiency as well into the surface of a thick silicon wafer. After sintering at 1100 °C in hydrogen atmosphere silicon is grown

  2. Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems

    E-Print Network [OSTI]

    Zhang, Teresa Weirui

    2011-01-01T23:59:59.000Z

    V. (2005). Environmental impacts from the solar energysolar cells for large-scale photovoltaics; the determination of environmentalsolar technologies are not without their own environmental

  3. Amorphous thin films for solar-cell applications. Final report, September 11, 1978-September 10, 1979

    SciTech Connect (OSTI)

    Carlson, D E; Balberg, I; Crandall, R S; Goldstein, B C; Hanak, J J; Pankove, J I; Staebler, D L; Weakliem, H A; Williams, R

    1980-02-01T23:59:59.000Z

    In Section II, Theoretical Modeling, theories for the capture of electrons by deep centers in hydrogenated amorphous silicon (a-Si:H) and for field-dependent quantum efficiency in a-Si:H are presented. In Section III, Deposition and Doping Studies, the optimization of phosphorus-doped a-Si:H carried out in four different discharge systems is described. Some details of the dc proximity and rf magnetron discharge systems are also provided. Preliminary mass spectroscopy studies of the rf magnetron discharge in both SiH/sub 4/ and SiF/sub 4/ are presented. In Section IV, Experimental Methods for Characterizing a-Si:H, recent work involving photoluminescence of fluorine-doped a-Si:H, photoconductivity spectra, the photoelectromagnetic effect, the photo-Hall effect and tunneling into a-Si:H is presented. Also, studies of the growth mechanism of Pt adsorbed on both crystalline Si and a-Si:H are described. Measurements of the surface photovoltage have been used to estimate the distribution of surface states of phosphorus-doped and undoped a-Si:H. Section V, Formation of Solar-Cell Structures, contains information on stacked or multiple-junction a-Si:H solar cells. In Section VI, Theoretical and Experimental Evaluation of Solar-Cell Parameters, an upper limit of approx. = 400 A is established for the hole diffusion length in undoped a-Si:H. A detailed description of carrier generation, recombination and transport in a-Si:H solar cells is given. Finally, some characteristics of Pd-Schottky-barrier cells are described for different processing histories.

  4. amorphous-silicon-based thin-film photovoltaic: Topics by E-print...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    devices have been obtained by a direct polymerization of undoped (or p-type doped) thin film (CH)x layer onto a polycrystalline cadmium sulfide film Paris-Sud XI, Universit...

  5. NREL's Black Silicon Increases Solar Cell Efficiency by Reducing Reflected Sunlight (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2010-11-01T23:59:59.000Z

    A fact sheet detailing the R&D 100 Award-winning Black Silicon Nanocatalytic Wet-Chemical Etch technology.

  6. Boron- and phosphorus-doped silicon germanium alloy nanocrystalsNonthermal plasma synthesis and gas-phase thin film deposition

    SciTech Connect (OSTI)

    Rowe, David J., E-mail: rowex108@umn.edu, E-mail: kortshagen@umn.edu; Kortshagen, Uwe R., E-mail: rowex108@umn.edu, E-mail: kortshagen@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

    2014-02-01T23:59:59.000Z

    Alloyed silicon-germanium (SiGe) nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials. However, common techniques for producing nanostructured SiGe focus on bulk processing; therefore little is known of the physical properties of SiGe nanocrystals (NCs) synthesized from molecular precursors. In this letter, we synthesize and deposit thin films of doped SiGe NCs using a single, flow-through nonthermal plasma reactor and inertial impaction. Using x-ray and vibrational analysis, we show that the SiGe NC structure appears truly alloyed for Si{sub 1?x}Ge{sub x} for 0.16 < x < 0.24, and quantify the atomic dopant incorporation within the SiGe NC films.

  7. Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint

    SciTech Connect (OSTI)

    Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

    2012-06-01T23:59:59.000Z

    We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

  8. The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1

    E-Print Network [OSTI]

    , to a better p-type, to insulating, and then to n-type -- is all due to different levels of Cu involvement treatment temperature. #12;2 I. Introduction CdTe based solar panels have emerged in recent years1 The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1 , T.A. Gessert2

  9. Solar cell array interconnects

    DOE Patents [OSTI]

    Carey, P.G.; Thompson, J.B.; Colella, N.J.; Williams, K.A.

    1995-11-14T23:59:59.000Z

    Electrical interconnects are disclosed for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value. 4 figs.

  10. Solar cell array interconnects

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Thompson, Jesse B. (Brentwood, CA); Colella, Nicolas J. (Livermore, CA); Williams, Kenneth A. (Livermore, CA)

    1995-01-01T23:59:59.000Z

    Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

  11. Optically optimal wavelength-scale patterned ITO/ZnO composite coatings for thin film solar cells

    E-Print Network [OSTI]

    Moreau, Antoine; Centeno, Emmanuel; Seassal, Christian

    2012-01-01T23:59:59.000Z

    A new methodology is proposed for finding structures that are, optically speaking, locally optimal : a physical analysis of much simpler structures is used to constrain the optimization process. The obtained designs are based on a flat amorphous silicon layer (to minimize recombination) with a patterned anti-reflective coating made of ITO or ZnO, or a composite ITO/ZnO coating. These latter structures are realistic and present good performances despite very thin active layers.

  12. Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces

    DOE Patents [OSTI]

    Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

    2014-09-09T23:59:59.000Z

    A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

  13. A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells

    SciTech Connect (OSTI)

    Wagner, Hannes [Department of Solar Energy, Institute Solid-State Physics, Leibniz University of Hannover, Appelstr. 2, 30167 Hannover (Germany); ARC Photovoltaics Centre of Excellence, University of New South Wales (UNSW), Sydney, NSW 2052 (Australia); Ohrdes, Tobias [Institute for Solar Energy Research Hamelin (ISFH), 31860 Emmerthal (Germany); Dastgheib-Shirazi, Amir [Div. Photovoltaics, Department of Physics, University of Konstanz, 78457 Konstanz (Germany); Puthen-Veettil, Binesh; Knig, Dirk [ARC Photovoltaics Centre of Excellence, University of New South Wales (UNSW), Sydney, NSW 2052 (Australia); Altermatt, Pietro P. [Department of Solar Energy, Institute Solid-State Physics, Leibniz University of Hannover, Appelstr. 2, 30167 Hannover (Germany)

    2014-01-28T23:59:59.000Z

    The performance of passivated emitter and rear (PERC) solar cells made of p-type Si wafers is often limited by recombination in the phosphorus-doped emitter. To overcome this limitation, a realistic PERC solar cell is simulated, whereby the conventional phosphorus-doped emitter is replaced by a thin, crystalline gallium phosphide (GaP) layer. The resulting GaP/Si PERC cell is compared to Si PERC cells, which have (i) a standard POCl{sub 3} diffused emitter, (ii) a solid-state diffused emitter, or (iii) a high efficiency ion-implanted emitter. The maximum efficiencies for these realistic PERC cells are between 20.5% and 21.2% for the phosphorus-doped emitters (i)(iii), and up to 21.6% for the GaP emitter. The major advantage of this GaP hetero-emitter is a significantly reduced recombination loss, resulting in a higher V{sub oc}. This is so because the high valence band offset between GaP and Si acts as a nearly ideal minority carrier blocker. This effect is comparable to amorphous Si. However, the GaP layer can be contacted with metal fingers like crystalline Si, so no conductive oxide is necessary. Compared to the conventional PERC structure, the GaP/Si PERC cell requires a lower Si base doping density, which reduces the impact of the boron-oxygen complexes. Despite the lower base doping, fewer rear local contacts are necessary. This is so because the GaP emitter shows reduced recombination, leading to a higher minority electron density in the base and, in turn, to a higher base conductivity.

  14. Has sempra found El Dorado in solar PVs? grid parity may now be within reach

    SciTech Connect (OSTI)

    NONE

    2009-03-15T23:59:59.000Z

    Instead of using conventional polycrystalline silicon modules that turn sunlight into electricity, these solar panels use cadmium telluride, a lower-cost semiconductor manufactured into thin-film cells that are cheaper to manufacture than their silicon-based counterparts. Electricity is being produced at costs as low as 7.5 {cents}/kWh.

  15. CdS thin films on LiNbO{sub 3} (1 0 4) and silicon (1 1 1) substrates prepared through an atom substitution method

    SciTech Connect (OSTI)

    Qin Haiming; Zhao Yue [State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100 (China); Liu Hong, E-mail: hongliu@sdu.edu.c [State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100 (China); Gao Zheng [State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100 (China); Wang Jiyang, E-mail: Jywang@sdu.edu.c [State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100 (China); Liu Duo; Sang Yuanhua; Yao Bin [State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100 (China); Boughton, Robert I. [Center for Material Science, Bowling Green State University, Bowling Green, OH 43403 (United States)

    2011-03-15T23:59:59.000Z

    CdS thin films on LiNbO{sub 3} (1 0 4) and silicon (1 1 1) substrates were prepared through an atom substitution technique using cadmium nitrate as a reactant in an H{sub 2}S atmosphere at 230 {sup o}C. X-ray diffraction, scanning electron microscopy and transmission microscopy results indicate that the CdS film grows on LiNbO{sub 3} oriented along the [0 0 1] axis in form of crystallized nanoplates, while that deposited on silicon forms randomly oriented nanoparticles. Investigation of the precursor thin film suggests that CdS forms from the O in the CdO precursor thin film being substituted by S from H{sub 2}S in the surrounding environment, which is designated as an atom substitution process. This novel method involving an atom substitution reaction between the CdO precursor thin film and its environment can provide a new low cost approach to the preparation of chalcogenide or other compound thin films. A schematic illustration and corresponding mechanism describing the details of this method are proposed. -- Graphical abstract: Elemental O in CdO is substituted by elemental S from the atmosphere in the apparatus, which is designated as an atom substitution process. This novel method involving an atom substitution reaction between the CdO precursor thin film and its environment can provide a new low cost approach to the preparation of chalcogenide or other compound thin films. Display Omitted Research highlights: {yields} An atom substitution method for thin film preparation was demonstrated. {yields} Combination of the atom substitution and spin coating method was achieved. {yields} Well oriented CdS thin film was prepared on LiNbO{sub 3} substrate. {yields} The atom substitution method could be used for many compound systems.

  16. Epitaxial growth of zinc blende and wurtzitic allied nitride thin films on (001) silicon

    E-Print Network [OSTI]

    Moustakas, Theodore

    hasbeenreported to be grown on ,@SiCand MgO( 100) substrates,"'which are closely lat- tice matchedto &GaN, and on GaAs substrate,"*" which has a significant mismatch to P-GaN. Growth of GaN onto silicon expansioncoefficient,it is rather difficult to epitaxially grow GaN on Si substrate. Early attempts have led

  17. DEVELOPMENT OF A NOVEL PRECURSOR FOR THE PREPARATION BY SELENIZATION OF HIGH EFFICIENCY CuInGaSe2/CdS THIN FILM SOLAR CELLS

    E-Print Network [OSTI]

    Romeo, Alessandro

    /CdS THIN FILM SOLAR CELLS N. Romeo1 , A. Bosio1 , V. Canevari2 , R. Tedeschi1 , S. Sivelli1 , A. Solar cells prepared by depositing in sequence on top of the CuInGaSe2 film 60 nm of CdS, 100 nm of pure(InGa)Se2, Thin Films, Selenization 1 INTRODUCTION CuInGaSe2 based solar cells exhibit the highest

  18. The Effects of Damage on Hydrogen-Implant-Induced Thin-Film Separation from Bulk Silicon Carbide

    SciTech Connect (OSTI)

    Gregory, R.B.; Holland, O.W.; Thomas, D.K.; Wetteroth, T.A.; Wilson, S.R.

    1999-04-05T23:59:59.000Z

    Exfoliation of Sic by hydrogen implantation and subsequent annealing forms the basis for a thin-film separation process which, when combined with hydrophilic wafer bonding, can be exploited to produce silicon-carbide-on-insulator, SiCOI. Sic thin films produced by this process exhibit unacceptably high resistivity because defects generated by the implant neutralize electrical carriers. Separation occurs because of chemical interaction of hydrogen with dangling bonds within microvoids created by the implant, and physical stresses due to gas-pressure effects during post-implant anneal. Experimental results show that exfoliation of Sic is dependent upon the concentration of implanted hydrogen, but the damage generated by the implant approaches a point when exfoliation is, in fact, retarded. This is attributed to excessive damage at the projected range of the implant which inhibits physical processes of implant-induced cleaving. Damage is controlled independently of hydrogen dosage by elevating the temperature of the SiC during implant in order to promote dynamic annealing. The resulting decrease in damage is thought to promote growth of micro-cracks which form a continuous cleave. Channeled H{sup +} implantation enhances the cleaving process while simultaneously minimizing residual damage within the separated film. It is shown that high-temperature irradiation and channeling each reduces the hydrogen fluence required to affect separation of a thin film and results in a lower concentration of defects. This increases the potential for producing SiC01 which is sufficiently free of defects and, thus, more easily electrically activated.

  19. Mechanisms for fatigue and wear of polysilicon structural thin films

    E-Print Network [OSTI]

    Alsem, Daniel Henricus

    2006-01-01T23:59:59.000Z

    of single-crystal silicon thin films from 1991 to 2006. Thefor polycrystalline silicon thin films After the initialThis mechanism is specific to thin-film silicon where cracks

  20. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01T23:59:59.000Z

    better mechanical durability. CIGS solar cell has about 20%5]. However, CIGS solar cells degrade with humidity andSelenide (CIGS)[3] and organic polymer[4] solar cells are

  1. Preparation of silicon substrates for gallium-arsenide solar cells by electron-beam-pulse processing. Annual technical report, March 15, 1980-March 15, 1981

    SciTech Connect (OSTI)

    Tobin, S.P.

    1981-05-01T23:59:59.000Z

    In the past year a process has been developed for creating high-quality epitaxial layers of germanium on silicon substrates using rapid heating and cooling with a pulsed electron beam. This single-crystal germanium coating is the key to the production of high efficiency GaAs solar cells on low-cost silicon substrates in an economical manner. Thin (less than or equal to 1 ..mu..m) layers of Ge have been deposited on Si wafers by chemical vapor deposition (CVD) in single-crystal form or by vacuum evaporation in amorphous or polycrystalline form. The CVD films have given the best results, with good crystallinity and electrical properties as deposited. A persistent problem with surface roughness in the as-deposited films has been overcome by pulsed electron beam melting of the near-surface region in time periods on the order of a microsecond. The brief molten period smooths the surface features without compromising the crystallinity, electrical properties, or interfacial abruptness of the Ge film. These layers are of a quality suitable for further evaluation by GaAs growth and cell processing in the next phase of the program. Pulsed electron beam processing also serves a vital function for the evaporated Ge films, which are melted by the beam and recrystallized on the Si substrates, epitaxial single crystal Ge layers result from amorphous or polycrystalline starting films. To date results have not been as satisfactory as for CVD films; contamination from several sources has been identified as a problem. Many of these sources have been eliminated, so that a decision on the intrinsic limitations of the evaporated film approach should be made in the near future.

  2. Quantitative analysis of defects in silicon. Silicon sheet growth development for the Large Area Silicon Sheet Task of the Low-Cost Solar Array Project. Final report

    SciTech Connect (OSTI)

    Natesh, R.; Smith, J.M.; Bruce, T.; Qidwai, H.A.

    1980-04-01T23:59:59.000Z

    The complete procedures for the defect analysis of silicon samples using a QTM-720 Image Analyzing System are described, chemical polishing, etching, and QTM operation are discussed. The data from one hundred and seventy four (174) samples, and a discussion of the data are included. The data include twin boundary density, dislocation pit density, and grain boundary length. (WHK)

  3. Influence of surface plasmon resonances of silver nanoparticles on optical and electrical properties of textured silicon solar cell

    SciTech Connect (OSTI)

    Sardana, Sanjay K.; Chava, Venkata S. N.; Thouti, Eshwar; Chander, Nikhil; Komarala, Vamsi K., E-mail: vamsi@ces.iitd.ac.in [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi 110016 (India); Kumar, Sanjai [Central Electronics Limited, Sahibabad 201010, Uttar Pradesh (India); Reddy, S. R. [BHEL-Amorphous Silicon Solar Cell Plant, BHEL House, Siri Fort, New Delhi 110049 (India)

    2014-02-17T23:59:59.000Z

    Here, we report average reflectance reduction of ?8% in wavelength range of 3001100?nm after coupling surface plasmon resonances (SPRs) of silver nanoparticles (NPs) to textured silicon (T-Si) surface. The enhancement of photocurrent from T-Si solar cell in off-resonant SPR region observed due to better radiative efficiency of NPs leading to outflow of scattered far-field into silicon maximized power generating electrons. Improvement in series resistance, fill factor, and open-circuit voltage (insensitive NPs size and morphology) are also observed with NPs along with photocurrent enhancement (sensitive to NPs sizes), which resulted cell efficiency enhancement from 4.49% to 6.42% for large area of 12.24 cm{sup 2}.

  4. Copper and Transparent-Conductor Reflectarray Elements on Thin-Film Solar Cell Panels

    E-Print Network [OSTI]

    Dreyer, Philippe; Nicolay, Sylvain; Ballif, Christophe; Perruisseau-Carrier, Julien

    2013-01-01T23:59:59.000Z

    This work addresses the integration of reflectarray antennas (RA) on thin film Solar Cell (SC) panels, as a mean to save real estate, weight, or cost in platforms such as satellites or transportable autonomous antenna systems. Our goal is to design a good RA unit cell in terms of phase response and bandwidth, while simultaneously achieving high optical transparency and low microwave loss, to preserve good SC and RA energy efficiencies, respectively. Since there is a trade-off between the optical transparency and microwave surface conductivity of a conductor, here both standard copper and transparent conductors are considered. The results obtained at the unit cell level demonstrates the feasibility of integrating RA on a thin-film SC, preserving for the first time good performance in terms of both SC and RA efficiency. For instance, measurement at X-band demonstrate families of cells providing a phase range larger than 270{\\deg} with average microwave loss of -2.45dB (resp. -0.25dB) and average optical transpa...

  5. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

    DOE Patents [OSTI]

    Mickelsen, Reid A. (Bellevue, WA) [Bellevue, WA; Chen, Wen S. (Seattle, WA) [Seattle, WA

    1985-08-13T23:59:59.000Z

    An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

  6. Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}

    DOE Patents [OSTI]

    Mickelsen, R.A.; Chen, W.S.

    1985-08-13T23:59:59.000Z

    An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

  7. Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2

    DOE Patents [OSTI]

    Mickelsen, R.A.; Chen, W.S.

    1982-06-15T23:59:59.000Z

    An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (1) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI[sub 2] chalcopyrite ternary materials which is vacuum deposited in a thin composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns ([approx equal]2.5[mu]m to [approx equal]5.0[mu]m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (2), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, is allowed.

  8. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

    DOE Patents [OSTI]

    Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

    1982-01-01T23:59:59.000Z

    An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

  9. Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

    SciTech Connect (OSTI)

    Coux, P. de [Institut de Cincia de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Barcelona (Spain); CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4 (France); Bachelet, R.; Fontcuberta, J.; Snchez, F., E-mail: fsanchez@icmab.es [Institut de Cincia de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Barcelona (Spain); Warot-Fonrose, B. [CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4 (France); Skumryev, V. [Instituci Catalana de Recerca i Estudis Avanats (ICREA), Barcelona, Spain and Dep. de Fsica, Univ. Autnoma de Barcelona, 08193 Bellaterra (Spain); Lupina, L.; Niu, G.; Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

    2014-07-07T23:59:59.000Z

    A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe{sub 2}O{sub 4} films can be grown epitaxially on Si(111) using a Y{sub 2}O{sub 3} buffer layer, and remarkably the Y{sub 2}O{sub 3}/Si(111) interface is stable and remains atomically sharp. CoFe{sub 2}O{sub 4} films present high crystal quality and high saturation magnetization.

  10. Edge sharpness Dependence of MNP in plasmonic solar cell In this article we show that in a a-Si ultra thin plsmonic solar cell with silver nano-particle, the

    E-Print Network [OSTI]

    Park, Namkyoo

    Edge sharpness Dependence of MNP in plasmonic solar cell *, , In this article we show that in a a-Si ultra thin plsmonic solar cell with silver nano-particle, the absorption of the light can-Si based plasmonic solar cells, the edge sharpness dependence of periodic silver nano-particle is analyzed

  11. Electroless (autocatalytic) nickel-cobalt thin films as solar control coatings

    SciTech Connect (OSTI)

    John, S.; Srinivasan, K.N.; Selvam, M. [Central Electrochemical Research Inst., Tamilnadu (India); Anuradha, S.; Rajendran, S. [Alagappa Univ., Tamilnadu (India). Dept. of Physics

    1994-12-31T23:59:59.000Z

    This paper describes the deposition of nickel-cobalt-phosphorus coatings by the electroless deposition technique for use as solar control coatings in architectural glazing of buildings. Electroless deposition is characterized by the autocatalytic deposition of a metal/alloy from an aqueous solution of its ions by interaction with a chemical reducing agent. The reducing agent provides electrons for the metal ions to be neutralized. The reduction is initiated by the catalyzed surface of the substrate and continued by the self catalytic activity of the deposited metal/alloy as long as the substrate is immersed in the electroless bath and operating conditions are maintained. Electroless nickel-cobalt-phosphorus thin films were deposited from a solution containing 15 g/l nickel sulphate, 5 g/l cobalt sulphate, 60 g/l ammonium citrate and 25 g/l sodium hypophosphite operating at 30 C, at a pH of 9.5 for two minutes. Electroless nickel-cobalt-phosphorus coatings are found to satisfy the basic requirements of solar control coatings. Autocatalytic deposition technique offers the possibilities of producing large area coatings with low capital investment, stability and good adhesion to glass substrates.

  12. Optimization of transparent and reflecting electrodes for amorphous-silicon solar cells. Final subcontract report, 1 May 1991--30 April 1994

    SciTech Connect (OSTI)

    Gordon, R.G.; Hu, J.; Lacks, D.; Musher, J.; Thornton, J.; Liang, H. [Harvard Univ., Cambridge, MA (United States)

    1994-07-01T23:59:59.000Z

    Fluorine-doped zinc oxide was shown to have the lowest absorption loss of any of the known transparent conductors. An apparatus was constructed to deposit textured, transparent, conductive, fluorine-doped zinc oxide layers with uniform thickness over a 10 cm by 10 cm area, using inexpensive, high-productivity atmospheric pressure chemical vapor deposition. Amorphous silicon solar cells grown on these textured films show very high peak quantum efficiencies (over 90%). However, a significant contact resistance develops at the interface between the amorphous silicon and the zinc oxide. Transparent, conductive gallium-doped zinc oxide films were grown by APCVD at a low enough temperature (260{degree}C) to be deposited on amorphous silicon as a final conductive back contact to solar cells. A quantum-mechanical theory of bonding was developed and applied to some metal oxides; it forms a basis for understanding TCO structures and the stability of their interfaces with silicon.

  13. Experimental and computational analysis of laser melting of thin silicon films

    SciTech Connect (OSTI)

    Grigoropoulos, C.P.; Dutcher, W.E. Jr.; Emery, A.F. (Univ. of Washington, Seattle (USA))

    1991-02-01T23:59:59.000Z

    Recrystallization of thin semiconductor films can yield improved electrical and crystalline properties. The recrystallization is often effected by using a laser source to melt the semiconductor that has been deposited on an amorphous insulating substrate. This paper describes detailed experimental observations of the associated phase-change process. A computational conductive heat transfer model is presented. The numerical predictions are compared to the experimental results and good agreement is obtained.

  14. 18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

    SciTech Connect (OSTI)

    Sopori, B. L.

    2008-09-01T23:59:59.000Z

    The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

  15. 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, Sept. 2008 PROGRESS IN THE SURFACE PASSIVATION OF SILICON SOLAR CELLS

    E-Print Network [OSTI]

    23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, Sept. 2008 PROGRESS typically lead to a sig- nificant degradation of the bulk lifetime [3]. Hence, low- temperature surface

  16. Temperature dependence of magnetic properties of La0.7Sr0.3MnO3SrTiO3 thin films on silicon substrates

    E-Print Network [OSTI]

    Boyer, Edmond

    by a 20-nm-thick SrTiO3 001 buffer layer. X-ray diffraction and atomic force microscopy studies. INTRODUCTION Perovskite manganites RE 1-x AE xMnO3, where RE =rare earth and AE=alkaline earth formTemperature dependence of magnetic properties of La0.7Sr0.3MnO3?SrTiO3 thin films on silicon

  17. Thin Solid Films 430 (2003) 125129 0040-6090/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved.

    E-Print Network [OSTI]

    Deng, Xunming

    for a-Si:H solar cell fabrication. In addition to photovoltaic applications, a-Si:H is also used of amorphous silicon (a-Si:H)-based photovoltaic devices, it is important to deposit high- quality a progress has been made in hydrogenated amorphous silicon (a-Si:H)-based thin film photovoltaic devices

  18. Fundamental Research and Development for Improved Crystalline Silicon Solar Cells: Final Subcontract Report, March 2002 - July 2006

    SciTech Connect (OSTI)

    Rohatgi, A.

    2007-11-01T23:59:59.000Z

    This report summarizes the progress made by Georgia Tech in the 2002-2006 period toward high-efficiency, low-cost crystalline silicon solar cells. This program emphasize fundamental and applied research on commercial substrates and manufacturable technologies. A combination of material characterization, device modeling, technology development, and complete cell fabrication were used to accomplish the goals of this program. This report is divided into five sections that summarize our work on i) PECVD SiN-induced defect passivation (Sections 1 and 2); ii) the effect of material inhomogeneity on the performance of mc-Si solar cells (Section 3); iii) a comparison of light-induced degradation in commercially grown Ga- and B-doped Czochralski Si ingots (Section 4); and iv) the understanding of the formation of high-quality thick-film Ag contacts on high sheet-resistance emitters (Section 5).

  19. New strategy to promote conversion efficiency using high-index nanostructures in thin-film solar cells

    E-Print Network [OSTI]

    Wang, DongLin

    2014-01-01T23:59:59.000Z

    Nano-scaled metallic or dielectric structures may provide various ways to trap light into thin-film solar cells for improving the conversion efficiency. In most schemes, the textured active layers are involved into light trapping structures that can provide perfect optical benefits but also bring undesirable degradation of electrical performance. Here we propose a novel approach to design high-performance thin-film solar cells. In our strategy, a flat active layer is adopted for avoiding electrical degradation, and an optimization algorithm is applied to seek for an optimized light trapping structure for the best optical benefit. As an example, we show that the efficiency of a flat a-Si:H thin-film solar cell can be promoted close to the certified highest value. It is also pointed out that, by choosing appropriate dielectric materials with high refractive index (>3) and high transmissivity in wavelength region of 350nm-800nm, the conversion efficiency of solar cells can be further enhanced.

  20. Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser

    SciTech Connect (OSTI)

    Yun, J., E-mail: j.yun@unsw.edu.au; Varalmov, S.; Huang, J.; Green, M. A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Suntech R and D Australia, Botany, New South Wales 2019 (Australia)

    2014-06-16T23:59:59.000Z

    The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-?m thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550?C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450?C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550?C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450?C, which limits the solar cell performance by n?=?2 recombination, and a performance degradation is expected due to severe shunting.

  1. Back-junction back-contact n-type silicon solar cell with diffused boron emitter locally blocked by implanted phosphorus

    SciTech Connect (OSTI)

    Mller, Ralph, E-mail: ralph.mueller@ise.fraunhofer.de; Schrof, Julian; Reichel, Christian; Benick, Jan; Hermle, Martin [Fraunhofer Institute for Solar Energy Systems, Heidenhofstrasse 2, Freiburg D-79110 (Germany)

    2014-09-08T23:59:59.000Z

    The highest energy conversion efficiencies in the field of silicon-based photovoltaics have been achieved with back-junction back-contact (BJBC) silicon solar cells by several companies and research groups. One of the most complex parts of this cell structure is the fabrication of the locally doped p- and n-type regions, both on the back side of the solar cell. In this work, we introduce a process sequence based on a synergistic use of ion implantation and furnace diffusion. This sequence enables the formation of all doped regions for a BJBC silicon solar cell in only three processing steps. We observed that implanted phosphorus can block the diffusion of boron atoms into the silicon substrate by nearly three orders of magnitude. Thus, locally implanted phosphorus can be used as an in-situ mask for a subsequent boron diffusion which simultaneously anneals the implanted phosphorus and forms the boron emitter. BJBC silicon solar cells produced with such an easy-to-fabricate process achieved conversion efficiencies of up to 21.7%. An open-circuit voltage of 674?mV and a fill factor of 80.6% prove that there is no significant recombination at the sharp transition between the highly doped emitter and the highly doped back surface field at the device level.

  2. {sup 1}H NMR electron-nuclear cross relaxation in thin films of hydrogenated amorphous silicon

    SciTech Connect (OSTI)

    Su Tining; Taylor, P. C.; Ganguly, G.; Carlson, D. E.; Bobela, D. C.; Hari, P. [Department of Physics, Colorado School of Mines, Golden, Colorado 80401 (United States); BP Solar, Toano, Virginia 23168 (United States); Department of Physics, University of Utah, Salt Lake City, Utah 84112 (United States); Department of Physics and Engineering Physics, University of Tulsa, Tulsa, Oklahoma 74104 (United States)

    2007-12-15T23:59:59.000Z

    We investigate the spin-lattice relaxation of the dipolar order in {sup 1}H NMR in hydrogenated amorphous silicon (a-Si:H). We find that the relaxation is dominated by the cross relaxation between the hydrogen nuclei and the paramagnetic states. The relaxation is inhomogeneous, and can be described as a stretched exponential function. We proposed a possible mechanism for this relaxation. This mechanism applies to a rather broad range of paramagnetic states, including the deep neutral defects (dangling bonds), the light-induced metastable defects, the defects created by doping, and the singly occupied, localized band-tail states populated by light at low temperatures. The cross relaxation is only sensitive to the bulk spin density, and the surface spins have a negligible effect on the relaxation.

  3. AMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION

    E-Print Network [OSTI]

    Deng, Xunming

    -based polymers (silicones) may not show this effect. Although silicones were used to encapsulate solar cells improved, which may make them suitable for encapsulating solar cells once again. We have recentlyAMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION Aarohi Vijh 1

  4. New Metallization Technique Suitable for 6-MW Pilot Production of Efficient Multicrystalline Solar Cells Using Upgraded Metallurgical Silicon: Final Technical Progress Report, December 17, 2007-- June 16, 2009

    Broader source: Energy.gov [DOE]

    This report describes CaliSolar's work as a Photovoltaic Technology Incubator awardee within the U.S. Department of Energy's Solar Energy Technologies Program. The term of this subcontract with the National Renewable Energy Laboratory was two years. During this time, CaliSolar evolved from a handful of employees to over 100 scientists, engineers, technicians, and operators. On the technical side, the company transitioned from a proof-of-concept through pilot-scale to large-scale industrial production. A fully automated 60-megawatt manufacturing line was commissioned in Sunnyvale, California. The facility converts upgraded metallurgical-grade silicon feedstock to ingots, wafers, and high-efficiency multicrystalline solar cells.

  5. Evaluation of Solar Grade Silicon Produced by the Institute of Physics and Technology: Cooperative Research and Development Final Report, CRADA Number CRD-07-211

    SciTech Connect (OSTI)

    Page, M.

    2013-02-01T23:59:59.000Z

    NREL and Solar Power Industries will cooperate to evaluate technology for producing solar grade silicon from industrial waste of the phosphorus industry, as developed by the Institute of Physics and Technology (IPT), Kazakhstan. Evaluation will have a technical component to assess the material quality and a business component to assess the economics of the IPT process. The total amount of silicon produced by IPT is expected to be quite limited (50 kg), so evaluations will need to be done on relatively small quantities (? 5 kg/sample).

  6. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    SciTech Connect (OSTI)

    Cecchi, S., E-mail: stefano.cecchi@mdm.imm.cnr.it; Chrastina, D.; Frigerio, J.; Isella, G. [L-NESS, Dipartimento di Fisica, Politecnico di MilanoPolo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy); Gatti, E.; Guzzi, M. [L-NESS, Dipartimento di Scienza dei Materiali, Universit di Milano Bicocca, via Cozzi 53, I-20126 Milano (Italy); Mller Gubler, E. [Electron Microscopy ETH Zurich, ETH Zurich, Auguste-Piccard-Hof 1, CH-8093 Zurich (Switzerland); Paul, D. J. [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-03-07T23:59:59.000Z

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1??m thick Si{sub 1?x}Ge{sub x} buffers (with x?>?0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475?C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si{sub 1?x}Ge{sub x} layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach.

  7. 17.1%-Efficient Multi-Scale-Textured Black Silicon Solar Cells without Dielectric Antireflection Coating: Preprint

    SciTech Connect (OSTI)

    Toor, F.; Page, M. R.; Branz, H. M.; Yuan, H. C.

    2011-07-01T23:59:59.000Z

    In this work we present 17.1%-efficient p-type single crystal Si solar cells with a multi-scale-textured surface and no dielectric antireflection coating. Multi-scale texturing is achieved by a gold-nanoparticle-assisted nanoporous etch after conventional micron scale KOH-based pyramid texturing (pyramid black etching). By incorporating geometric enhancement of antireflection, this multi-scale texturing reduces the nanoporosity depth required to make silicon 'black' compared to nanoporous planar surfaces. As a result, it improves short-wavelength spectral response (blue response), previously one of the major limiting factors in 'black-Si' solar cells. With multi-scale texturing, the spectrum-weighted average reflectance from 350- to 1000-nm wavelength is below 2% with a 100-nm deep nanoporous layer. In comparison, roughly 250-nm deep nanopores are needed to achieve similar reflectance on planar surface. Here, we characterize surface morphology, reflectivity and solar cell performance of the multi-scale textured solar cells.

  8. amorphous silicon-based solar: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    networking issues away from the programmer via ... Beal, Jacob 58 A Silicon-Based Micro Gas Turbine Engine for Power Generation CERN Preprints Summary: This paper reports on our...

  9. Identification and mitigation of performance-limiting defects in epitaxially grown kerfless silicon for solar cells

    E-Print Network [OSTI]

    Powell, Douglas M. (Douglas Michael)

    2014-01-01T23:59:59.000Z

    Reducing material use is a major driver for cost reduction of crystalline silicon photovoltaic modules. The dominant wafer fabrication process employed in the industry today, ingot casting & sawing, wastes approximately ...

  10. Method for cleaning a solar cell surface opening made with a solar etch paste

    DOE Patents [OSTI]

    Rohatgi, Ajeet; Meemongkolkiat, Vichai

    2010-06-22T23:59:59.000Z

    A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.

  11. Structural, electrical, and thermoelectric properties of bismuth telluride: Silicon/carbon nanocomposites thin films

    SciTech Connect (OSTI)

    Agarwal, Khushboo; Mehta, B. R., E-mail: brmehta@physics.iitd.ac.in [Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)

    2014-08-28T23:59:59.000Z

    In this study, the effect of the presence of secondary phases on the structural, electrical, and thermoelectric properties of nanocomposite Bi{sub 2}Te{sub 3} films prepared by co-sputtering of silicon and carbon with Bi{sub 2}Te{sub 3} has been investigated. Growth temperature and the presence of Si and C phase are observed to have a strong effect on the topography and orientation of crystallites. X-ray diffraction study demonstrates that Bi{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3}:C samples have preferred (0 0 15) orientation in comparison to Bi{sub 2}Te{sub 3}:Si sample, which have randomly oriented crystallites. Atomic force, conducting atomic force, and scanning thermal microscopy analysis show significant differences in topographical, electrical, and thermal conductivity contrasts in Bi{sub 2}Te{sub 3}:Si and Bi{sub 2}Te{sub 3}:C samples. Due to the randomly oriented crystallites and the presence of Si along the crystallite boundaries, appreciable Seebeck coefficient, higher electrical conductivity, and lower thermal conductivity is achieved resulting in relatively higher value of power factor (3.71 mW K{sup ?2} m{sup ?1}) for Bi{sub 2}Te{sub 3}:Si sample. This study shows that by incorporating a secondary phase along crystallite boundaries, microstructural, electrical, and thermoelectric properties of the composite samples can be modified.

  12. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01T23:59:59.000Z

    the solid state thin-film lithium battery S8-ES ( Front EdgeLithium-Ion Polymer Battery ..Mikhaylik, "Lithium-Sulfur Secondary Battery: Chemistry and

  13. Pulsed energy synthesis and doping of silicon carbide

    DOE Patents [OSTI]

    Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

    1995-06-20T23:59:59.000Z

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  14. Pulsed energy synthesis and doping of silicon carbide

    DOE Patents [OSTI]

    Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Thompson, Jesse B. (Brentwood, CA); Sigmon, Thomas W. (Beaverton, OR)

    1995-01-01T23:59:59.000Z

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  15. ENHANCED GROWTH RATE AND SILANE UTILIZATION IN AMORPHOUS SILICON AND NANOCRYSTALLINE-SILICON SOLAR CELL DEPOSITION VIA GAS PHASE ADDITIVES

    SciTech Connect (OSTI)

    Ridgeway, R.G.; Hegedus, S.S.; Podraza, N.J.

    2012-08-31T23:59:59.000Z

    Air Products set out to investigate the impact of additives on the deposition rate of both ???µCSi and ???±Si-H films. One criterion for additives was that they could be used in conventional PECVD processing, which would require sufficient vapor pressure to deliver material to the process chamber at the required flow rates. The flow rate required would depend on the size of the substrate onto which silicon films were being deposited, potentially ranging from 200 mm diameter wafers to the 5.7 m2 glass substrates used in GEN 8.5 flat-panel display tools. In choosing higher-order silanes, both disilane and trisilane had sufficient vapor pressure to withdraw gas at the required flow rates of up to 120 sccm. This report presents results obtained from testing at Air Products?¢???? electronic technology laboratories, located in Allentown, PA, which focused on developing processes on a commercial IC reactor using silane and mixtures of silane plus additives. These processes were deployed to compare deposition rates and film properties with and without additives, with a goal of maximizing the deposition rate while maintaining or improving film properties.

  16. Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance

    SciTech Connect (OSTI)

    Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor

    2012-05-05T23:59:59.000Z

    We report on CdS/CdTe photovoltaic devices that contain a thin Ta2O5 film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta2O5 films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta2O5 interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta2O5 interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.

  17. Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics

    E-Print Network [OSTI]

    Chung, Choong-Heui

    2012-01-01T23:59:59.000Z

    CuInS x Se 2-x solar cells and its effect on defectabundant Cu 2 ZnSn(S,Se) 4 solar cells, submitted 5. B. K.Visibly transparent polymer solar cells produced by solution

  18. Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics

    E-Print Network [OSTI]

    Chung, Choong-Heui

    2012-01-01T23:59:59.000Z

    cm 2 ) efficiency CIGS solar cells taken from reference [and 20.3% efficiency CIGS solar cells [6] through the use ofcm 2 ) efficiency CIGS solar cells taken from reference [6].

  19. Damp-Heat Induced Degradation of Transparent Conducting Oxides for Thin-Film Solar Cells: Preprint

    SciTech Connect (OSTI)

    Pern, F. J.; Noufi, R.; Li, X.; DeHart, C.; To, B.

    2008-05-01T23:59:59.000Z

    The stability of intrinsic and Al-doped single- and bi-layer ZnO for thin-film CuInGaSe2 solar cells, along with Al-doped Zn1-xMgxO alloy and Sn-doped In2O3 (ITO) and F-doped SnO2, was evaluated by direct exposure to damp heat (DH) at 85oC and 85% relative humidity. The results show that the DH-induced degradation rates followed the order of Al-doped ZnO and Zn1-xMgxO >> ITO > F:SnO2. The degradation rates of Al:ZnO were slower for films of higher thickness, higher substrate temperature in sputter-deposition, and with dry-out intervals. As inferred from the optical micro-imaging showing the initiation and propagation of degrading patterns and regions, the degradation behavior appears similar for all TCOs, despite the obvious difference in the degradation rate. A degradation mechanism is proposed to explain the temporal process involving thermal hydrolysis.

  20. Bandgap-Graded Cu2Zn(Sn1-xGex)S4 Thin-Film Solar Cells Derived from Metal Chalcogenide Complex Ligand Capped Nanocrystals

    E-Print Network [OSTI]

    Cao, Guozhong

    a power conversion efficiency of 6.3%. INTRODUCTION Kesterite, Cu2ZnSnS4 (CZTS), has received significant has demonstrated the potential for generating highly efficient CZTS-based thin-film solar cells, which be highly beneficial to develop a method for fabricating high-efficiency CZTS solar cells without

  1. Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells

    E-Print Network [OSTI]

    Fan, Shanhui

    Optical Society of America OCIS codes: (310.7005) Transparent conductive coatings; (310.6845) Thin film

  2. Amorphous silicon solar cells. Quarterly report No. 1, 1 October 1980-31 December 1980

    SciTech Connect (OSTI)

    Carlson, D.E.; Balberg, I.; Crandall, R.S.; Dresner, J.; Goldstein, B.; Hanak, J.J.; Schade, H.E.; Staebler, D.L.; Weakliem, H.A.

    1981-02-01T23:59:59.000Z

    Progress is reported on the following: theoretical modeling, deposition and doping studies, experimental methods for the characterization of a-Si:H, formation of solar-cell structures, theoretical and experimental evaluation of solar-cell parameters, and stability studies. (MHR)

  3. Producing Solar Cells By Surface Preparation For Accelerated Nucleation Of Microcrystalline Silicon On Heterogeneous Substrates.

    DOE Patents [OSTI]

    Yang, Liyou (Plainsboro, NJ); Chen, Liangfan (Langhorne, PA)

    1998-03-24T23:59:59.000Z

    Attractive multi-junction solar cells and single junction solar cells with excellent conversion efficiency can be produced with a microcrystalline tunnel junction, microcrystalline recombination junction or one or more microcrystalline doped layers by special plasma deposition processes which includes plasma etching with only hydrogen or other specified etchants to enhance microcrystalline growth followed by microcrystalline. nucleation with a doped hydrogen-diluted feedstock.

  4. CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar

    E-Print Network [OSTI]

    Sites, James R.

    80523 ABSTRACT Copper indium gallium sulfide, CuIn1-xGaxS2 (CIGS2) solar cells prepared with chemicalCuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar 1 , Parag/heterojunction partner/ ZnO/Cr/Ag contact fingers solar cells of area ~0.44 cm 2 were fabricated at FSEC

  5. Back-side hydrogenation technique for defect passivation in silicon solar cells

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Denver, CO)

    1994-01-01T23:59:59.000Z

    A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts.

  6. Back-side hydrogenation technique for defect passivation in silicon solar cells

    DOE Patents [OSTI]

    Sopori, B.L.

    1994-04-19T23:59:59.000Z

    A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts. 3 figures.

  7. Potential-induced degradation in solar cells: Electronic structure and diffusion mechanism of sodium in stacking faults of silicon

    SciTech Connect (OSTI)

    Ziebarth, Benedikt, E-mail: Benedikt.Ziebarth@iwm.fraunhofer.de; Gumbsch, Peter [Fraunhofer Institut fr Werkstoffmechanik IWM, Whlerstr. 11, 79108 Freiburg (Germany); Karlsruher Institut fr Technologie, Institut fr Ausgewandte Materialien (IAM-ZBS), Engelbert-Arnold-Str. 4, 76131 Karlsruhe (Germany); Mrovec, Matous; Elssser, Christian [Fraunhofer Institut fr Werkstoffmechanik IWM, Whlerstr. 11, 79108 Freiburg (Germany)

    2014-09-07T23:59:59.000Z

    Sodium decorated stacking faults (SFs) were recently identified as the primary cause of potential-induced degradation in silicon (Si) solar-cells due to local electrical short-circuiting of the p-n junctions. In the present study, we investigate these defects by first principles calculations based on density functional theory in order to elucidate their structural, thermodynamic, and electronic properties. Our calculations show that the presence of sodium (Na) atoms leads to a substantial elongation of the Si-Si bonds across the SF, and the coverage and continuity of the Na layer strongly affect the diffusion behavior of Na within the SF. An analysis of the electronic structure reveals that the presence of Na in the SF gives rise to partially occupied defect levels within the Si band gap that participate in electrical conduction along the SF.

  8. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual subcontract report, April 1, 1994--March 31, 1995

    SciTech Connect (OSTI)

    Gordon, R.G. [Harvard Univ., Cambridge, MA (United States)

    1995-10-01T23:59:59.000Z

    Transparent and reflecting electrodes are important parts of the structure of amorphous silicon solar cells. We report improved methods for depositing zinc oxide, deposition of tin nitride as a potential reflection-enhancing diffusion barrier between the a-Si and back metal electrodes. Highly conductive and transparent fluorine-doped zinc oxide was successfully produced on small areas by atmospheric pressure CVD from a less hazardous zinc precursor, zinc acetylacetonate. The optical properties measured for tin nitride showed that the back-reflection would be decreased if tin nitride were used instead of zinc oxide as a barrier layer over silver on aluminum. Niobium-doped titanium dioxide was produced with high enough electrical conductivity so that normal voltages and fill factors were obtained for a-Si cells made on it.

  9. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1998-06-02T23:59:59.000Z

    A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

  10. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, A.M.

    1996-01-30T23:59:59.000Z

    A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

  11. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1996-01-01T23:59:59.000Z

    A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

  12. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, A.M.

    1998-06-02T23:59:59.000Z

    A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

  13. Thermal Management of Solar Cells

    E-Print Network [OSTI]

    Saadah, Mohammed Ahmed

    2013-01-01T23:59:59.000Z

    Nanostructured Silicon- Based Solar Cells, 2013. X. C. Tong,heat exchangers, and solar cells," Sci-Tech News, vol. 65,in crystalline silicon solar cells," Renewable Energy, vol.

  14. Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles

    SciTech Connect (OSTI)

    Liu, X.; Zhang, X. W., E-mail: xwzhang@semi.ac.cn; Yin, Z. G.; Meng, J. H.; Gao, H. L.; Zhang, L. Q.; Zhao, Y. J.; Wang, H. L. [Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083 (China)

    2014-11-03T23:59:59.000Z

    We have reported a method to enhance the performance of graphene-Si (Gr/Si) Schottky junction solar cells by introducing Au nanoparticles (NPs) onto the monolayer graphene and few-layer graphene. The electron transfer between Au NPs and graphene leads to the increased work function and enhanced electrical conductivity of graphene, resulting in a remarkable improvement of device efficiency. By optimizing the initial thickness of Au layers, the power conversion efficiency of Gr/Si solar cells can be increased by more than three times, with a maximum value of 7.34%. These results show a route for fabricating efficient and stable Gr/Si solar cells.

  15. Optical properties of nanostructured silicon-rich silicon dioxide

    E-Print Network [OSTI]

    Stolfi, Michael Anthony

    2006-01-01T23:59:59.000Z

    We have conducted a study of the optical properties of sputtered silicon-rich silicon dioxide (SRO) thin films with specific application for the fabrication of erbium-doped waveguide amplifiers and lasers, polarization ...

  16. Excellent Passivation and Low Reflectivity Al2O3/TiO2 Bilayer Coatings for n-Wafer Silicon Solar Cells: Preprint

    SciTech Connect (OSTI)

    Lee, B. G.; Skarp, J.; Malinen, V.; Li, S.; Choi, S.; Branz, H. M.

    2012-06-01T23:59:59.000Z

    A bilayer coating of Al2O3 and TiO2 is used to simultaneously achieve excellent passivation and low reflectivity on p-type silicon. This coating is targeted for achieving high efficiency n-wafer Si solar cells, where both passivation and anti-reflection (AR) are needed at the front-side p-type emitter. It could also be valuable for front-side passivation and AR of rear-emitter and interdigitated back contact p-wafer cells. We achieve high minority carrier lifetimes {approx}1 ms, as well as a nearly 2% decrease in absolute reflectivity, as compared to a standard silicon nitride AR coating.

  17. Semiconductor heterostructures and optimization of light-trapping structures for efficient thin-film solar cells

    E-Print Network [OSTI]

    Yu, Edward T.

    applications. However, one of the most persistent issues in solar cell design continues to be how to most and integration of active and passive media in solar cells. Myriad photonic structures containing sub of semiconductor nanostructures have inspired a host of new solar cell structures, including designs based

  18. Manipulating hybrid structures of polymer/a-Si for thin film solar cells

    SciTech Connect (OSTI)

    Peng, Ying; He, Zhiqun, E-mail: zhqhe@bjtu.edu.cn, E-mail: J.I.B.Wilson@hw.ac.uk; Zhang, Zhi; Liang, Chunjun [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Diyaf, Adel; Ivaturi, Aruna; Wilson, John I. B., E-mail: zhqhe@bjtu.edu.cn, E-mail: J.I.B.Wilson@hw.ac.uk [SUPA, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)

    2014-03-10T23:59:59.000Z

    A series of uniform polymer/amorphous silicon hybrid structures have been fabricated by means of solution-casting for polymer and radio frequency excited plasma enhanced chemical vapour deposition for amorphous silicon (a-Si:H). Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) functioned as a photoactive donor, while the silicon layer acted as an acceptor. It is found that matching the hole mobility of the polymer to the electron mobility of amorphous silicon is critical to improve the photovoltaic performance from hybrid cells. A three-layer p-i-n structure of ITO/PEDOT:PSS(200?nm)/i-Si(450?nm)/n-Si(200?nm)/Al with a power conversion efficiency of 4.78% under a standard test condition was achieved.

  19. Novel R2R Manufacturable Photonic-Enhanced Thin Film Solar Cells; January 28, 2010 -- January 31, 2011

    SciTech Connect (OSTI)

    Slafer, D.; Dalal, V.

    2012-03-01T23:59:59.000Z

    Final subcontract report for PV Incubator project 'Novel R2R Manufacturable Photonic-Enhanced Thin Film Solar Cells.' The goal of this program was to produce tandem Si cells using photonic bandgap enhancement technology developed at ISU and Lightwave Power that would have an NREL-verified efficiency of 7.5% on 0.25 cm{sup 2} area tandem junction cell on plastic substrates. This goal was met and exceeded within the timeframe and budget of the program. On smaller area cells, the efficiency was even higher, {approx}9.5% (not verified by NREL). Appropriate polymers were developed to fabricate photonic and plasmonic devices on stainless steel, Kapton and PEN substrates. A novel photonic-plasmon structure was developed which shows a promise of improving light absorption in thin film cells, a better light absorption than by any other scheme.

  20. Thin Film Encapsulation Methods for Large Area MEMS Packaging

    E-Print Network [OSTI]

    Mahajerin, Armon

    2012-01-01T23:59:59.000Z

    P. J. French, Robust Wafer-Level Thin-Film Encapsulation ofThe Elastic Properties of Thin- Film Silicon Nitride, IEEELPCVD Silicon Nitride Thin Films at Cryogenic Temperatures,

  1. European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2AO.2.3 EFFECT OF SiN DEPOSITION TEMPERATURE ON SURFACE PASSIVATION OF N-TYPE CZ SILICON

    E-Print Network [OSTI]

    25th European Photovoltaic Solar Energy Conference, Valencia, Spain, 6-10 September 2010, 2AO.2N deposition leads to increasing the hydrogen content of the SiN layers. This improves the supply of hydrogen silicon using thermally grown oxide or amorphous films based on hydrogenated silicon compounds has been

  2. Fabrication of contacts for silicon solar cells including printing burn through layers

    DOE Patents [OSTI]

    Ginley, David S; Kaydanova, Tatiana; Miedaner, Alexander; Curtis, Calvin J; Van Hest, Marinus Franciscus Antonius Maria

    2014-06-24T23:59:59.000Z

    A method for fabricating a contact (240) for a solar cell (200). The method includes providing a solar cell substrate (210) with a surface that is covered or includes an antireflective coating (220). For example, the substrate (210) may be positioned adjacent or proximate to an outlet of an inkjet printer (712) or other deposition device. The method continues with forming a burn through layer (230) on the coating (220) by depositing a metal oxide precursor (e.g., using an inkjet or other non-contact printing method to print or apply a volume of liquid or solution containing the precursor). The method includes forming a contact layer (240) comprising silver over or on the burn through layer (230), and then annealing is performed to electrically connect the contact layer (240) to the surface of the solar cell substrate (210) through a portion of the burn through layer (230) and the coating (220).

  3. Structural and Optical Investigations of GaN-Si Interface for a Heterojunction Solar Cell

    SciTech Connect (OSTI)

    Williams, Joshua J.; Jeffries, April M.; Bertoni, Mariana I.; Williamson, Todd L.; Bowden, Stuart G.; Honsberg, Christiana B.

    2014-06-08T23:59:59.000Z

    In recent years the development of heterojunction silicon based solar cells has gained much attention, lea largely by the efforts of Panasonics HIT cell. The success of the HIT cell prompts the scientific exploration of other thin film layers, besides the industrially accepted amorphous silicon. In this paper we report upon the use of gallium nitride, grown by MBE at low temperatures (~200C), on silicon wafers as one possible candidate for making a heterojunction solar cell; the first approximation of band alignments between GaN and Si; and the material quality as determined by X-ray diffraction.

  4. Passivated Tunneling Contacts to N-Type Wafer Silicon and Their Implementation into High Performance Solar Cells: Preprint

    SciTech Connect (OSTI)

    Stradins, P.; Essig, S.; Nemeth, W.; Lee, B. G.; Young, D.; Norman, A.; Liu, Y.; Luo, J.-W.; Warren, E.; Dameron, A.; LaSalvia, V.; Page, M.; Rohatgi, A.; Upadhyaya, A.; Rounsaville, B.; Ok, Y.-W.; Glunz, S.; Benick, J.; Feldmann, F.; Hermle, M.

    2014-12-01T23:59:59.000Z

    We present a case that passivated contacts based on a thin tunneling oxide layer, combined with a transport layer with properly selected work function and band offsets, can lead to high efficiency c-Si solar cells. Passivated contacts contribute to cell efficiency as well as design flexibility, process robustness, and a simplified process flow. Material choices for the transport layer are examined, including transparent n-type oxides and n+-doped poly-Si. SiO2/n+-poly-Si full-area, induced-junction back surface field contacts to n-FZ and n-Cz Si are incorporated into high efficiency cells with deep, passivated boron emitters.

  5. Plasma polymerization of C[subscript 4]F[subscript 8] thin film on high aspect ratio silicon molds

    E-Print Network [OSTI]

    Yeo, L. P.

    High aspect ratio polymeric micro-patterns are ubiquitous in many fields ranging from sensors, actuators, optics, fluidics and medical. Second generation PDMS molds are replicated against first generation silicon molds ...

  6. Simulation of Large-Area Silicon Solar Cells1 Gernot Heiser2

    E-Print Network [OSTI]

    New South Wales, University of

    from the Australian Research Council (ARC). The Centre for Photovoltaic Devices and Systems, fax: +61 2 385 5995, e-mail: G.Heiser@unsw.edu.au 3 Centre for Photovoltaic Devices and Systems, tel to produce an accurate model of a full-sized high-efficiency solar cell. We demon- strate the power

  7. amorphous silicon carbon: Topics by E-print Network

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    Ph. Emplit; S. Massar 2011-02-04 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  8. amorphous silicon film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    values previously Hellman, Frances 8 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  9. amorphous hydrogenated silicon: Topics by E-print Network

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    Gunther; Baets, Roel 2011-01-01 36 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  10. amorphous silicon pv: Topics by E-print Network

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    Ph. Emplit; S. Massar 2011-02-04 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  11. amorphous silicon epid: Topics by E-print Network

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    Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  12. amorphous silicon arrays: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    amorphous carbon Wang, Zhong L. 8 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  13. amorphous silicon alloy: Topics by E-print Network

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    Ph. Emplit; S. Massar 2011-02-04 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  14. amorphous silicon studied: Topics by E-print Network

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    Yang, Cheng-Chieh 2012-01-01 22 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  15. amorphous silicon films: Topics by E-print Network

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    values previously Hellman, Frances 8 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  16. amorphous silicon sensor: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  17. amorphous silicon nanoparticles: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  18. amorphous silicon alloys: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  19. amorphous silicon tft: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 20 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  20. amorphous silicon photovoltaic: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    properties Mazur, Eric 20 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  1. amorphous silicon final: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  2. amorphous silicon diodes: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  3. amorphous silicon surfaces: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 10 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  4. amorphous silicon technology: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    technologies is presented. Then 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  5. amorphous silicon electronic: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    technologies is presented. Then 22 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  6. amorphous silicon dioxide: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 8 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  7. amorphous silicon oxynitride: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 15 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  8. amorphous silicon schottky: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 13 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  9. amorphous silicon nitride: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Paris-Sud XI, Universit de 26 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  10. amorphous silicon layers: Topics by E-print Network

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    Ph. Emplit; S. Massar 2011-02-04 16 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  11. amorphous silicon detector: Topics by E-print Network

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    Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  12. area amorphous silicon: Topics by E-print Network

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    Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  13. amorphous silicon measured: Topics by E-print Network

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    Ph. Emplit; S. Massar 2011-02-04 13 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  14. amorphous silicon deposited: Topics by E-print Network

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    Ph. Emplit; S. Massar 2011-02-04 23 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  15. amorphous silicon flat: Topics by E-print Network

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    Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  16. amorphous silicon modules: Topics by E-print Network

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    Ph. Emplit; S. Massar 2011-02-04 10 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  17. amorphous silicon sensors: Topics by E-print Network

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    Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  18. amorphous silicon carbonitride: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  19. amorphous silicon research: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  20. amorphous silicon prepared: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nominanda, Helinda 2008-10-10 10 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  1. amorphous silicon microdisk: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 24 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  2. amorphous silicon germanium: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Si-I or Ge Wang, Wei Hua 37 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  3. amorphous silicon radiation: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  4. amorphous silicon multijunction: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  5. amorphous silicon pixel: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 14 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  6. Preventing light-induced degradation in multicrystalline silicon

    SciTech Connect (OSTI)

    Lindroos, J., E-mail: jeanette.lindroos@aalto.fi; Boulfrad, Y.; Yli-Koski, M.; Savin, H. [Department of Micro and Nanosciences, Aalto University, Tietotie 3, 02150 Espoo (Finland)

    2014-04-21T23:59:59.000Z

    Multicrystalline silicon (mc-Si) is currently dominating the silicon solar cell market due to low ingot costs, but its efficiency is limited by transition metals, extended defects, and light-induced degradation (LID). LID is traditionally associated with a boron-oxygen complex, but the origin of the degradation in the top of the commercial mc-Si brick is revealed to be interstitial copper. We demonstrate that both a large negative corona charge and an aluminum oxide thin film with a built-in negative charge decrease the interstitial copper concentration in the bulk, preventing LID in mc-Si.

  7. Optimization of the deposition and annealing conditions of fluorine-doped indium oxide films for silicon solar cells

    SciTech Connect (OSTI)

    Untila, G. G., E-mail: GUntila@mics.msu.su; Kost, T. N.; Chebotareva, A. B.; Timofeyev, M. A. [Moscow State University, Skobel'tsyn Institute of Nuclear Physics (Russian Federation)

    2013-03-15T23:59:59.000Z

    Fluorine-doped indium oxide (IFO) films are deposited onto (pp{sup +})Si and (n{sup +}nn{sup +})Si structures made of single-crystal silicon by ultrasonic spray pyrolysis. The effect of the IFO deposition time and annealing time in an argon atmosphere with methanol vapor on the IFO chemical composition, the photovoltage and fill factor of the Illumination-U{sub oc} curves of IFO/(pp{sup +})Si structures, and the sheet resistance of IFO/(n{sup +}nn{sup +})Si structures, correlating with the IFO/(n{sup +})Si contact resistance, is studied. The obtained features are explained by modification of the properties of the SiO{sub x} transition layer at the IFO/Si interface during deposition and annealing. Analysis of the results made it possible to optimize the fabrication conditions of solar cells based on IFO/(pp{sup +})Si heterostructures and to increase their efficiency from 17% to a record 17.8%.

  8. Development of low cost contacts to silicon solar cells. Final report, 15 October 1978-30 April 1980

    SciTech Connect (OSTI)

    Tanner, D.P.; Iles, P.A.

    1980-01-01T23:59:59.000Z

    A summary of work done on the development of a copper based contact system for silicon solar cells is presented. The work has proceeded in three phases: (1) Development of a copper based contact system using plated Pd-Cr-Cu. Good cells were made but cells degraded under low temperature (300/sup 0/C) heat treatments. (2) The degradation in Phase I was identified as copper migration into the cells junction region. A paper study was conducted to find a proper barrier to the copper migration problem. Nickel was identified as the best candidate barrier and this was verified in a heat treatment study using evaporated metal layers. (3) An electroless nickel solution was substituted for the electroless chrominum solution in the original process. Efforts were made to replace the palladium bath with an appropriate nickel layer, but these were unsuccessful. 150 cells using the Pd-Ni-Cu contact system were delivered to JPL. Also a cost study was made on the plating process to assess the chance of reaching 5 cents/watt.

  9. Microsystems enabled photovoltaics 14.9% efficient 14μm thick crystalline silicon solar cell

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHighandSWPA / SPRA / USACE625Data ShowC -9 FirstBRDF4,SolarMicrosystems

  10. Light trapping in thin film solar cells using textured photonic crystal

    DOE Patents [OSTI]

    Yi, Yasha (Somerville, MA); Kimerling, Lionel C. (Concord, MA); Duan, Xiaoman (Amesbury, MA); Zeng, Lirong (Cambridge, MA)

    2009-01-27T23:59:59.000Z

    A solar cell includes a photoactive region that receives light. A photonic crystal is coupled to the photoactive region, wherein the photonic crystal comprises a distributed Bragg reflector (DBR) for trapping the light.

  11. Barrier Coatings for Thin Film Solar Cells: Final Subcontract Report, September 1, 2002 -- January 30, 2008

    SciTech Connect (OSTI)

    Olsen, L. C.

    2010-03-01T23:59:59.000Z

    This program has involved investigations of the stability of CdTe and copper-indium-gallium-diselenide (CIGS) solar cells under damp heat conditions and effects of barrier coatings.

  12. assisted silicon dioxide: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    dioxide substrates is described. The approach consists of solid such as displays and thin-film polycrystalline solar cells. Particularly important for low- cost thin-film solar...

  13. 2008 Solar Technologies Market Report

    E-Print Network [OSTI]

    Price, S.

    2010-01-01T23:59:59.000Z

    10MW Thin Film Solar Power Plant for Sempra Generation. 2009). Concentrating solar power plants of the southwest1.11. Concentrating solar power plants of the southwest

  14. High Efficiency CdTe/CdS Thin Film solar Cells by a Process Suitable for Large Scale Production. N. Romeo, A. Bosio, A. Romeo, M. Bianucci, L. Bonci, C. Lenti

    E-Print Network [OSTI]

    Romeo, Alessandro

    High Efficiency CdTe/CdS Thin Film solar Cells by a Process Suitable for Large Scale Production. N-mail:Nicola.Romeo@fis.unipr.it ABSTRACT: It has been demonstrated that CdTe/CdS thin film solar cells can exhibit an efficiency around 16 diffusor in CdTe and at a long run it can segregates at the grain boundaries damaging the solar cell

  15. Damp-Heat Induced Degradation of Transparent Conducting Oxides for Thin Film Solar Cells (Presentation)

    SciTech Connect (OSTI)

    Pern, J.; Noufi, R.; Li, X.; DeHart, C.; To, B.

    2008-05-01T23:59:59.000Z

    The objectives are: (1) To achieve a high long-term performance reliability for the thin-film CIGS PV modules with more stable materials, device structure designs, and moisture-resistant encapsulation materials and schemes; (2) to evaluate the DH stability of various transparent conducting oxides (TCOs); (3) to identify the degradation mechanisms and quantify degradation rates; (4) to seek chemical and/or physical mitigation methods, and explore new materials. It's important to note that direct exposure to DH represents an extreme condition that a well-encapsulated thin film PV module may never experience.

  16. Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon

    E-Print Network [OSTI]

    Garfunkel, Eric

    silicate dielectric films on silicon J. J. Chambers Department of Chemical Engineering, North Carolina indicates that the yttrium silicate films are amorphous with uniform contrast throughout the layer. MEIS (10 ?) SiO2 film and oxidized, a yttrium silicate film is formed with bonding and composition similar

  17. .beta.-silicon carbide protective coating and method for fabricating same

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Thompson, Jesse B. (Brentwood, CA)

    1994-01-01T23:59:59.000Z

    A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or .mu.c-SiC film on the surface and produce .beta.--SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface.

  18. [beta]-silicon carbide protective coating and method for fabricating same

    DOE Patents [OSTI]

    Carey, P.G.; Thompson, J.B.

    1994-11-01T23:59:59.000Z

    A polycrystalline beta-silicon carbide film or coating and method for forming same on components, such as the top of solar cells, to act as an extremely hard protective surface, and as an anti-reflective coating are disclosed. This is achieved by DC magnetron co-sputtering of amorphous silicon and carbon to form a SiC thin film onto a surface, such as a solar cell. The thin film is then irradiated by a pulsed energy source, such as an excimer laser, to synthesize the poly- or [mu]c-SiC film on the surface and produce [beta]-SiC. While the method of this invention has primary application in solar cell manufacturing, it has application wherever there is a requirement for an extremely hard surface. 3 figs.

  19. Defect physics of the kesterite thin-film solar cell absorber Cu2ZnSnS4 Shiyou Chen,1,2

    E-Print Network [OSTI]

    Gong, Xingao

    Defect physics of the kesterite thin-film solar cell absorber Cu2ZnSnS4 Shiyou Chen,1,2 X. G. Gong Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China 2 Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241, People's Republic of China 3

  20. Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE

    SciTech Connect (OSTI)

    Kumar, Mahesh; Roul, Basanta [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India) [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Bhat, Thirumaleshwara N.; Rajpalke, Mohana K. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)] [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Misra, P.; Kukreja, L.M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)] [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Sinha, Neeraj [Office of Principal Scientific Advisor, Government of India, New Delhi 110011 (India)] [Office of Principal Scientific Advisor, Government of India, New Delhi 110011 (India); Kalghatgi, A.T. [Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India)] [Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Krupanidhi, S.B., E-mail: sbk@mrc.iisc.ernet.in [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)

    2010-11-15T23:59:59.000Z

    High-quality GaN epilayers were grown on Si (1 1 1) substrates by molecular beam epitaxy using a new growth process sequence which involved a substrate nitridation at low temperatures, annealing at high temperatures, followed by nitridation at high temperatures, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. The material quality of the GaN films was also investigated as a function of nitridation time and temperature. Crystallinity and surface roughness of GaN was found to improve when the Si substrate was treated under the new growth process sequence. Micro-Raman and photoluminescence (PL) measurement results indicate that the GaN film grown by the new process sequence has less tensile stress and optically good. The surface and interface structures of an ultra thin silicon nitride film grown on the Si surface are investigated by core-level photoelectron spectroscopy and it clearly indicates that the quality of silicon nitride notably affects the properties of GaN growth.