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Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Thin silicon solar cells  

SciTech Connect (OSTI)

The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M. [Astro Power Inc., Solar Park, Newark, DE (United States)

1992-12-01T23:59:59.000Z

2

Enabling Thin Silicon Solar Cell Technology  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Enabling Thin Silicon Solar Cell Enabling Thin Silicon Solar Cell Technology Enabling Thin Silicon Solar Cell Technology Print Friday, 21 June 2013 10:49 Generic silicon solar cells showing +45°, -45°, and dendritic crack patterns. The effort to shift U.S. energy reliance from fossil fuels to renewable sources has spurred companies to reduce the cost and increase the reliability of their solar photovoltaics (SPVs). The use of thinner silicon in SPV technologies is being widely adopted because it significantly reduces costs; however, silicon is brittle, and thinner silicon, coupled with other recent trends in SPV technologies (thinner glass, lighter or no metal frames, increased use of certain polymers for encapsulation of the silicon cells), is more susceptible to stress and cracking. When the thin

3

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network [OSTI]

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

4

Efficient light-trapping nanostructures in thin silicon solar cells  

E-Print Network [OSTI]

We examine light-trapping in thin crystalline silicon periodic nanostructures for solar cell applications. Using group theory, we show that light-trapping can be improved over a broad band when structural mirror symmetry ...

Han, Sang Eon

5

A Review of Thin Film Silicon for Solar Cell Applications  

E-Print Network [OSTI]

A Review of Thin Film Silicon for Solar Cell Applications May 99 Contents 1 Introduction 3 2 Low 2.2.3 Deposition onto foreign substrates with the intention of improving crystallographic nature Field Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 11

6

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

Ciszek, Theodore F. (Evergreen, CO)

1995-01-01T23:59:59.000Z

7

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network [OSTI]

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell hal-00749873,version1-25Nov shortage until 2010. Research on epitaxial growth for thin film crystalline silicon solar cells has gained

8

Extended light scattering model incorporating coherence for thin-film silicon solar cells  

E-Print Network [OSTI]

Extended light scattering model incorporating coherence for thin-film silicon solar cells Thomas film solar cells. The model integrates coherent light propagation in thin layers with a direct, non potential for light trapping in textured thin film silicon solar cells. VC 2011 American Institute

Lenstra, Arjen K.

9

Enabling Thin Silicon Solar Cell Technology  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

cracking problem in silicon cell technology," says Budiman. "The ALS provides us with a light that allows us to measure and characterize molecular stress in a very quantitative...

10

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers  

SciTech Connect (OSTI)

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Antoniadis, H.

2011-03-01T23:59:59.000Z

11

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network [OSTI]

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell #12;2 1. Introduction: martin.labrune@polytechnique.edu ABSTRACT We report on heterojunction solar cells whose thin intrinsic

12

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell  

E-Print Network [OSTI]

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic­4]. In this context, a basic idea is to periodically texture the metallic back reflector of a thin-film solar cell

13

Comparison of Ag and SiO2 Nanoparticles for Light Trapping Applications in Silicon Thin Film Solar Cells  

Science Journals Connector (OSTI)

Comparison of Ag and SiO2 Nanoparticles for Light Trapping Applications in Silicon Thin Film Solar Cells ... Department

Martin Theuring; Peng Hui Wang; Martin Vehse; Volker Steenhoff; Karsten von Maydell; Carsten Agert; Alexandre G. Brolo

2014-09-10T23:59:59.000Z

14

Advanced polycrystalline silicon thin film solar cells using high rate plasma enhanced chemical vapour deposited amorphous silicon on textured glass.  

E-Print Network [OSTI]

??Solid phase crystallized polycrystalline silicon (poly-Si) thin-film solar cell on glass is an emerging Photovoltaics (PV) technology combining the robustness of crystalline Si material with (more)

Jin, Guangyao

2010-01-01T23:59:59.000Z

15

Efficient Light Trapping in Inverted Nanopyramid Thin Crystalline Silicon Membranes for Solar Cell Applications  

E-Print Network [OSTI]

Thin-film crystalline silicon (c-Si) solar cells with light-trapping structures can enhance light absorption within the semiconductor absorber layer and reduce material usage. Here we demonstrate that an inverted nanopyramid ...

Mavrokefalos, Anastassios

16

Polycrystalline silicon thin-film solar cells on glass by ion-assisted deposition.  

E-Print Network [OSTI]

??Polycrystalline silicon (pc-Si, grain size > 1??m, no amorphous tissue) on glass is an interesting material for thin-film solar cells due to the low costs, (more)

Straub, Axel

2005-01-01T23:59:59.000Z

17

CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION  

E-Print Network [OSTI]

CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION Barbara Terheiden,1* Thomas Kunz,2 Ingo Burkert2 , Renate Horbelt,1, D-91058 Erlangen, Germany ABSTRACT: Convection assisted chemical vapor deposition (CoCVD) is applied

18

Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010  

SciTech Connect (OSTI)

In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

Kumar, A.; Ravi, K. V.

2011-06-01T23:59:59.000Z

19

Silicon Nanoparticle Synthesis and Modeling for Thin Film Solar Cells.  

E-Print Network [OSTI]

??Nanometer-scale silicon shows extraordinary electronic and optical properties that are not available for bulk silicon, and many investigations toward applications in optoelectronic devices are being (more)

Albu, Zahra

2014-01-01T23:59:59.000Z

20

Light Trapping for Thin Silicon Solar Cells by Femtosecond Laser Texturing: Preprint  

SciTech Connect (OSTI)

Femtosecond laser texturing is used to create nano- to micron-scale surface roughness that strongly enhances light-trapping in thin crystalline silicon solar cells. Light trapping is crucial for thin solar cells where a single light-pass through the absorber is insufficient to capture the weakly absorbed red and near-infrared photons, especially with an indirect-gap semiconductor absorber layer such as crystalline Si which is less than 20 um thick. We achieve enhancement of the optical absorption from light-trapping that approaches the Yablonovitch limit.

Lee, B. G.; Lin, Y. T.; Sher, M. J.; Mazur, E.; Branz, H. M.

2012-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Microcrystalline SiGe Absorber Layers in Thin-film Silicon Solar Cells  

Science Journals Connector (OSTI)

Abstract We report on physical properties of microcrystalline silicon-germanium (?c-SiGe:H) absorber layers for the use as a bottom structure in silicon based multijunction thin-film solar cells. Due to incorporation of Ge the absorption of the film is enhanced compared to pure ?c-Si:H films. This provides the opportunity to significantly reduce the absorber layer thickness. The experiments were carried out in a 13.56MHz PECVD reactor using germane, silane and hydrogen as process gases. Single layers were characterized for their optical and electrical properties. Results from single and multijunction solar cells using a ?c- SiGe:H absorbers will be shown. In tandem solar cells a reduction of about 60% of the absorber layer thickness could be reached by using SiGe alloys compared to pristine silicon tandem cells.

K.V. Maydell; K. Grunewald; M. Kellermann; O. Sergeev; P. Klement; N. Reininghaus; T. Kilper

2014-01-01T23:59:59.000Z

22

Low-cost, deterministic quasi-periodic photonic structures for light trapping in thin film silicon solar cells  

E-Print Network [OSTI]

Light trapping has been an important issue for thin film silicon solar cells because of the low absorption coefficient in the near infrared range. In this paper, we present a photonic structure which combines anodic aluminum ...

Sheng, Xing

23

Enhancement of photovoltaic properties of multicrystalline silicon solar cells by combination of buried metallic contacts and thin porous silicon  

SciTech Connect (OSTI)

Photovoltaic properties of buried metallic contacts (BMCs) with and without application of a front porous silicon (PS) layer on multicrystalline silicon (mc-Si) solar cells were investigated. A Chemical Vapor Etching (CVE) method was used to perform front PS layer and BMCs of mc-Si solar cells. Good electrical performance for the mc-Si solar cells was observed after combination of BMCs and thin PS films. As a result the current-voltage (I-V) characteristics and the internal quantum efficiency (IQE) were improved, and the effective minority carrier diffusion length (Ln) increases from 75 to 110 {mu}m after BMCs achievement. The reflectivity was reduced to 8% in the 450-950 nm wavelength range. This simple and low cost technology induces a 12% conversion efficiency (surface area = 3.2 cm{sup 2}). The obtained results indicate that the BMCs improve charge carrier collection while the PS layer passivates the front surface. (author)

Ben Rabha, M.; Bessais, B. [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l'Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2010-03-15T23:59:59.000Z

24

Enhanced quantum efficiency of amorphous silicon thin film solar cells with the inclusion of a rear-reflector thin film  

SciTech Connect (OSTI)

We investigated the growth mechanism of amorphous silicon thin films by implementing hot-wire chemical vapor deposition and fabricated thin film solar cell devices. The fabricated cells showed efficiencies of 7.5 and 8.6% for the samples without and with the rear-reflector decomposed by sputtering, respectively. The rear-reflector enhances the quantum efficiency in the infrared spectral region from 550 to 750?nm. The more stable quantum efficiency of the sample with the inclusion of a rear-reflector than the sample without the rear-reflector due to the bias effect is related to the enhancement of the short circuit current.

Park, Seungil [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Yong Ji, Hyung; Jun Kim, Myeong; Hyeon Peck, Jong [Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Kim, Keunjoo, E-mail: kimk@chonbuk.ac.kr [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2014-02-17T23:59:59.000Z

25

Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light-scattering substrate  

E-Print Network [OSTI]

Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light://jap.aip.org/about/rights_and_permissions #12;Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light require light-trapping schemes that are predominantly based on depositing the solar cells on rough

Psaltis, Demetri

26

Advanced Light-Trapping in Thin-Film Silicon Solar Cells  

Science Journals Connector (OSTI)

Light-trapping schemes are essential for high efficiency thin-film Silicon devices. Implementation of various light-trapping/scattering elements will be discussed. An optimum textured...

Wyrsch, Nicolas

27

Design, fabrication and optical characterization of photonic crystal assisted thin film monocrystalline-silicon solar cells  

Science Journals Connector (OSTI)

In this paper, we present the integration of an absorbing photonic crystal within a monocrystalline silicon thin film photovoltaic stack fabricated without epitaxy. Finite difference...

Meng, Xianqin; Depauw, Valrie; Gomard, Guillaume; El Daif, Ounsi; Trompoukis, Christos; Drouard, Emmanuel; Jamois, Ccile; Fave, Alain; Dross, Frdric; Gordon, Ivan; Seassal, Christian

2012-01-01T23:59:59.000Z

28

Remarkable progress in thin-film silicon solar cells using high-efficiency triple-junction technology  

Science Journals Connector (OSTI)

Abstract Despite the many advantages of thin-film silicon (Si) solar cells, their low efficiencies remain a challenge that must be overcome. Efficient light utilization across the solar spectrum is required to achieve efficiencies over 15%, allowing them to be competitive with other solar cell technologies. To produce high-efficiency thin-film Si solar cells, we have developed triple-junction solar cell structures to enhance solar spectrum utilization. To maximize the light management, in-house ZnO:Al layers with high haze ratios and high transmittances were developed. In addition, novel doping layers, such as n-type microcrystalline silicon oxide (c-SiOx:H), which has a very low refractive index, and p-type microcrystalline silicon oxide (c-SiOx:H), which has a wide bandgap, were successfully applied to the optical reflector and the window layer, respectively. Thin-film quality control techniques for the deposition of hydrogenated amorphous silicon (a-Si:H) in the top cell, hydrogenated amorphous silicon-germanium (a-SiGe:H) or hydrogenated microcrystalline silicon (?c-Si:H) in the middle cell, and hydrogenated microcrystalline silicon (?c-Si:H) in the bottom cell were also important factors leading to the production of high-efficiency triple-junction solar cells. As a result of this work, an initial efficiency of 16.1% (in-house measurement) in the a-Si:H/a-SiGe:H/?c-Si:H stack and a stabilized efficiency of 13.4% (confirmed by NREL) in the a-Si:H/?c-Si:H/?c-Si:H stack were successfully achieved in a small-area triple-junction solar cell with dimensions of 1cm1cm.

Soohyun Kim; Jin-Won Chung; Hyun Lee; Jinhee Park; Younho Heo; Heon-Min Lee

2013-01-01T23:59:59.000Z

29

Received 13 May 2013 | Accepted 18 Nov 2013 | Published 16 Dec 2013 All-back-contact ultra-thin silicon nanocone solar  

E-Print Network [OSTI]

. In particular, a silicon (Si) solar cell is still the mainstream technology in industry, and it has witnessed-thin silicon nanocone solar cells with 13.7% power conversion efficiency Sangmoo Jeong1, Michael D. McGehee2 & Yi Cui2,3 Thinner Si solar cells with higher efficiency can make a Si photovoltaic system a cost

Cui, Yi

30

High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing  

E-Print Network [OSTI]

One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

31

Black Silicon Solar Thin-film Microcells Integrating Top Nanocone Structures for Broadband and Omnidirectional Light-Trapping  

E-Print Network [OSTI]

Recently developed classes of monocrystalline silicon solar microcells (u-cell) can be assembled into modules with characteristics (i.e., mechanically flexible forms, compact concentrator designs, and high-voltage outputs) that would be impossible to achieve using conventional, wafer-based approaches. In this paper, we describe a highly dense, uniform and non-periodic nanocone forest structure of black silicon (bSi) created on optically-thin (30 um) u-cells for broadband and omnidirectional light-trapping with a lithography-free and high-throughput plasma texturizing process. With optimized plasma etching conditions and a silicon nitride passivation layer, black silicon u-cells, when embedded in a polymer waveguiding layer, display dramatic increases of as much as 65.7% in short circuit current, as compared to a bare silicon device. The conversion efficiency increases from 8% to 11.5% with a small drop in open circuit voltage and fill factor.

Xu, Zhida; Brueckner, Eric P; Li, Lanfang; Jiang, Jing; Nuzzo, Ralph G; Liu, Gang L

2014-01-01T23:59:59.000Z

32

SOLAR MARKET POWERS SILICON  

Science Journals Connector (OSTI)

SOLAR MARKET POWERS SILICON ... Polysilicon shortages are boon to manufacturers, bane of solar energy industry ... Solar energy is a relatively new market for polysilicon manufacturers. ...

JEAN-FRA&CCEDIL;NOIS TREMBLAY

2006-10-02T23:59:59.000Z

33

Ion beam assisted sputter deposition of ZnO for silicon thin-film solar cells  

Science Journals Connector (OSTI)

Ion beam assisted deposition (IBAD) is a promising technique for improving the material quality of ZnO-based thin films. The operation of an auxiliary Ar+ ion source during deposition of ZnO?:?Ga thin films by dc magnetron sputtering led to an improvement in crystalline texture, especially at low temperatures due to momentum transfer from the ions to the growing film. Etching of IBAD-ZnO?:?Ga films in diluted HCl revealed crater-like surface structures with crater diameters of up to 600nm. These structures are usually achieved after deposition at high substrate temperatures. This is an indication that the grain structure was remarkably changed by bombarding these films during deposition in terms of increasing the compactness of the ZnO?:?Ga films. Subsequent annealing procedures led to an improvement in the electrical and optical properties. Hydrogenated microcrystalline silicon (c-Si?:?H) solar cells exhibited enhanced efficiency as compared to cells on other low-temperature sputtered reference ZnO films. This improvement was ascribed to light trapping by the modified etching behaviour of the IBAD-ZnO?:?Ga films as well as improved transparency after the vacuum annealing step.

M Warzecha; D Khl; M Wuttig; J Hpkes

2014-01-01T23:59:59.000Z

34

Integrated All-silicon Thin-film Power Electronics on Flexible Sheets For Ubiquitous Wireless Charging Stations based on Solar-energy Harvesting  

E-Print Network [OSTI]

into wireless charging stations. In this work, we combine the thin-film circuits with flexible solar cellsIntegrated All-silicon Thin-film Power Electronics on Flexible Sheets For Ubiquitous Wireless Charging Stations based on Solar-energy Harvesting Liechao Huang, Warren Rieutort-Louis, Yingzhe Hu, Josue

35

Development of Commercial Technology for Thin Film Silicon Solar Cells on Glass: Cooperative Research and Development Final Report, CRADA Number CRD-07-209  

SciTech Connect (OSTI)

NREL has conducted basic research relating to high efficiency, low cost, thin film silicon solar cell design and the method of making solar cells. Two patents have been issued to NREL in the above field. In addition, specific process and metrology tools have been developed by NREL. Applied Optical Sciences Corp. (AOS) has expertise in the manufacture of solar cells and has developed its own unique concentrator technology. AOS wants to complement its solar cell expertise and its concentrator technology by manufacturing flat panel thin film silicon solar cell panels. AOS wants to take NREL's research to the next level, using it to develop commercially viable flat pane, thin film silicon solar cell panels. Such a development in equipment, process, and metrology will likely produce the lowest cost solar cell technology for both commercial and residential use. NREL's fundamental research capability and AOS's technology and industrial background are complementary to achieve this product development.

Sopori, B.

2013-03-01T23:59:59.000Z

36

Experimental Demonstration of Quasi-Resonant Absorption in Silicon Thin Films for Enhanced Solar Light Trapping  

E-Print Network [OSTI]

We experimentally demonstrate that the addition of partial lattice disorder to a thin-film micro-crystalline silicon photonic crystal results in the controlled spectral broadening of its absorption peaks to form quasi resonances; increasing light trapping over a wide bandwidth while also reducing sensitivity to the angle of incident radiation. Accurate computational simulations are used to design the active-layer photonic crystal so as to maximize the number of its absorption resonances over the broadband interval where micro-crystalline silicon is weakly absorbing before lattice disorder augmented with fabrication-induced imperfections are applied to further boost performance. Such a design strategy may find practical use for increasing the efficiency of thin-film silicon photovoltaics.

Oskooi, Ardavan; Ishizaki, Kenji; Noda, Susumu

2013-01-01T23:59:59.000Z

37

Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013  

SciTech Connect (OSTI)

Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

Ravi, T. S.

2013-05-01T23:59:59.000Z

38

Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations  

SciTech Connect (OSTI)

Thin-film solar cells based on silicon have emerged as an alternative to standard thick wafers technology, but they are less efficient, because of incomplete absorption of sunlight, and non-radiative recombinations. In this paper, we focus on the case of crystalline silicon (c-Si) devices, and we present a full analytic electro-optical model for p-n junction solar cells with Lambertian light trapping. This model is validated against numerical solutions of the drift-diffusion equations. We use this model to investigate the interplay between light trapping, and bulk and surface recombination. Special attention is paid to surface recombination processes, which become more important in thinner devices. These effects are further amplified due to the textures required for light trapping, which lead to increased surface area. We show that c-Si solar cells with thickness of a few microns can overcome 20% efficiency and outperform bulk ones when light trapping is implemented. The optimal device thickness in presence of light trapping, bulk and surface recombination, is quantified to be in the range of 1080??m, depending on the bulk quality. These results hold, provided the effective surface recombination is kept below a critical level of the order of 100?cm/s. We discuss the possibility of meeting this requirement, in the context of state-of-the-art techniques for light trapping and surface passivation. We show that our predictions are within the capability of present day silicon technologies.

Bozzola, A., E-mail: angelo.bozzola@unipv.it; Kowalczewski, P.; Andreani, L. C. [Physics Department, University of Pavia and CNISM, via Bassi 6, I-27100 Pavia (Italy)

2014-03-07T23:59:59.000Z

39

Electrochemical thinning of silicon  

DOE Patents [OSTI]

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

Medernach, John W. (Albuquerque, NM)

1994-01-01T23:59:59.000Z

40

Electrochemical thinning of silicon  

DOE Patents [OSTI]

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

Medernach, J.W.

1994-01-11T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Annual subcontract report, May 1985 - Jul 1986  

SciTech Connect (OSTI)

A study was undertaken of the optoelectronic properties of amorphous silicon-hydrogen thin films deposited from disilane at high deposition rates. The information derived from this study was used to fabricate amorphous silicon solar cells with efficiencies exceeding 7%. The intrinsic layer of these solar cells was deposited at 15 angstroms/second. Material properties investigated included dark conductivity, photoconductivity, minority carrier diffusion length, and density of states. The solar cells properties characterized were absolute quantum yield and simulated global AM 1.5 efficiencies. Investigations were undertaken utilizing optical and infrared spectroscopy to optimize the microstructures of the intrinsic amorphous silicon. That work was sponsored by the New York State Energy Research and Development Authority. The information was used to optimize the intrinsic layer of amorphous silicon solar cells, resulting in AM 1.5 efficiencies exceeding 7%.

Wiesmann, H.; Dolan, J.; Fricano, G.; Danginis, V.

1987-02-01T23:59:59.000Z

42

Angular behavior of the absorption limit in thin film silicon solar cells  

E-Print Network [OSTI]

We investigate the angular behavior of the upper bound of absorption provided by the guided modes in thin film solar cells. We show that the 4n^2 limit can be potentially exceeded in a wide angular and wavelength range using two-dimensional periodic thin film structures. Two models are used to estimate the absorption enhancement; in the first one, we apply the periodicity condition along the thickness of the thin film structure but in the second one, we consider imperfect confinement of the wave to the device. To extract the guided modes, we use an automatized procedure which is established in this work. Through examples, we show that from the optical point of view, thin film structures have a high potential to be improved by changing their shape. Also, we discuss the nature of different optical resonances which can be potentially used to enhance light trapping in the solar cell. We investigate the two different polarization directions for one-dimensional gratings and we show that the transverse magnetic pola...

Naqavi, Ali; Sderstrm, Karin; Battaglia, Corsin; Paeder, Vincent; Scharf, Toralf; Herzig, Hans Peter; Ballif, Christophe

2013-01-01T23:59:59.000Z

43

Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006  

SciTech Connect (OSTI)

The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

Wohlgemuth, J.; Narayanan, M.

2006-07-01T23:59:59.000Z

44

The Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Proposition for High Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications Preprint Alan Goodrich, Michael Woodhouse, and Peter Hacke Presented at the 2012 IEEE Photovoltaic Specialists Conference Austin, Texas June 3-8, 2012 Conference Paper NREL/CP-6A20-55477 June 2012 NOTICE The submitted manuscript has been offered by an employee of the Alliance for Sustainable Energy, LLC (Alliance), a contractor of the US Government under Contract No. DE-AC36-08GO28308. Accordingly, the US Government and Alliance retain a nonexclusive royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for US Government purposes. This report was prepared as an account of work sponsored by an agency of the United States government.

45

Development of tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar panels with reflective layer and 4-step laser scribing for building-integrated photovoltaic applications  

Science Journals Connector (OSTI)

In this work, tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar modules were successfully designed and developed for building-integrated photovoltaic applications. Novel and key technologies of reflective layers and ...

Chin-Yi Tsai, Chin-Yao Tsai

2014-01-01T23:59:59.000Z

46

Microcrystalline silicon germanium: An attractive bottom-cell material for thin-film silicon-based tandem-solar-cells  

SciTech Connect (OSTI)

The authors have prepared hydrogenated microcrystalline silicon germanium by plasma enhanced CVD of a mixture of silane and germane gas diluted with hydrogen. The growth conditions have been systematically controlled to obtain large ({approximately}400{angstrom}) crystallites of silicon-germanium as observed using Raman scattering and x-ray diffraction. The dangling bond (germanium) density has been reduced to <5 x 10{sup 16} cm{sup {minus}3} at low substrate temperatures ({approximately}150 C). The optical absorption spectra of the 50% Ge containing material is red-shifted compared to microcrystalline silicon, consistent with a reduction of the indirect optical gap to 0.9 eV. Schottky type cells fabricated using Au on an n{sup +} crystalline silicon substrate confirm that the long wavelength response is remarkably enhanced in this material.

Ganguly, Gautam; Ikeda, Toru; Kajiwara, Kei; Matduda, Akihisa

1997-07-01T23:59:59.000Z

47

LOSS ANALYSIS OF BACK-CONTACT BACK-JUNCTION THIN-FILM MONOCRYSTALLINE SILICON SOLAR CELLS  

E-Print Network [OSTI]

- dimensional finite element modeling with a resistance network simulation. The simulated and measured current of the best cell with 13.5 % efficiency is the high saturation current density at the metal-silicon interface significance of various loss mechan- isms. This analysis is the purpose of this contribution. Standard

48

Metal Nanoparticles Enhanced Optical Absorption in Thin Film Solar Cells  

Science Journals Connector (OSTI)

The plasmonic enhanced absorption for thin film solar cells with silver nanoparticles (NPs) deposited on top of the amorphous silicon film (a-Si:H) solar cells and embedded inside the...

Xie, Wanlu; Liu, Fang; Qu, Di; Xu, Qi; Huang, Yidong

49

Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells  

E-Print Network [OSTI]

Thin-film silicon solar cell technology," Progress insolar cells: modeling, materials and device technology.technologies competitive with traditional wafer based solar cells,

Deceglie, Michael G.

2014-01-01T23:59:59.000Z

50

Silicon point contact concentrator solar cells  

SciTech Connect (OSTI)

Experimental results are presented for thin high resistivity concentrator silicon solar cells which use a back-side point-contact geometry. Cells of 130 and 233 micron thickness were fabricated and characterized. The thin cells were found to have efficiencies greater than 22 percent for incident solar intensities of 3 to 30 W/sq cm. Efficiency peaked at 23 percent at 11 W/sq cm measured at 22-25 C. Strategies for obtaining higher efficiencies with this solar cell design are discussed. 8 references.

Sinton, R.A.; Kwark, Y.; Swirhun, S.; Swanson, R.M.

1985-08-01T23:59:59.000Z

51

High efficiency, low cost, thin film silicon solar cell design and method for making  

DOE Patents [OSTI]

A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

Sopori, Bhushan L. (Denver, CO)

2001-01-01T23:59:59.000Z

52

Heterojunction Silicon Microwire Solar Cells  

Science Journals Connector (OSTI)

Heterojunction Silicon Microwire Solar Cells ... Center for Advanced Photovoltaic Devices and Systems, University of Waterloo, 200 University Ave W, Waterloo, Ontario N2L 3G1, Canada ...

Majid Gharghi; Ehsanollah Fathi; Boubacar Kante; Siva Sivoththaman; Xiang Zhang

2012-11-21T23:59:59.000Z

53

Multi-resonant silver nano-disk patterned thin film hydrogenated amorphous silicon solar cells for Staebler-Wronski effect compensation  

E-Print Network [OSTI]

We study polarization independent improved light trapping in commercial thin film hydrogenated amorphous silicon (a-Si:H) solar photovoltaic cells using a three-dimensional silver array of multi-resonant nano-disk structures embedded in a silicon nitride anti-reflection coating (ARC) to enhance optical absorption in the intrinsic layer (i-a-Si:H) for the visible spectrum for any polarization angle. Predicted total optical enhancement (OE) in absorption in the i-a-Si:H for AM-1.5 solar spectrum is 18.51% as compared to the reference, and producing a 19.65% improvement in short-circuit current density (JSC) over 11.7 mA/cm2 for a reference cell. The JSC in the nano-disk patterned solar cell (NDPSC) was found to be higher than the commercial reference structure for any incident angle. The NDPSC has a multi-resonant optical response for the visible spectrum and the associated mechanism for OE in i-a-Si:H layer is excitation of Fabry-Perot resonance facilitated by surface plasmon resonances. The detrimental Staebl...

Vora, Ankit; Pearce, Joshua M; Bergstrom, Paul L; Gney, Durdu

2014-01-01T23:59:59.000Z

54

Silicon Solar Cell Light-Trapping Using Defect Mode Photonic Kelsey A. Whitesell*a  

E-Print Network [OSTI]

Silicon Solar Cell Light-Trapping Using Defect Mode Photonic Crystals Kelsey A. Whitesell to enhance performance of thin film solar cells because of their unique ability to control light. We show for light trapping in thin film photovoltaics. Keywords: photonic crystals, defect, silicon, solar cell

Atwater, Harry

55

Light harvesting by planar photonic crystal in solar cells: The case of amorphous silicon  

E-Print Network [OSTI]

Light harvesting by planar photonic crystal in solar cells: The case of amorphous silicon Guillaume on light management in silicon thin film solar cells, using photonic crystals (PhC) structures. We by means of optical simulations performed on realistic thin film solar cell stacks. Theoretically

Boyer, Edmond

56

Silicon solar cells: state of the art  

Science Journals Connector (OSTI)

...Roberto Amendolia and Can Li Silicon solar cells: state of the art Martin A. Green...majority of photovoltaic (PV) solar cells produced to date have been based...this point are also explored. solar cells|silicon solar cells|silicon...

2013-01-01T23:59:59.000Z

57

Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell  

E-Print Network [OSTI]

We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

Li, Tong; Jiang, Chun

2010-01-01T23:59:59.000Z

58

Hybrid Silicon NanoconePolymer Solar Cells  

Science Journals Connector (OSTI)

Hybrid Silicon NanoconePolymer Solar Cells ... In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. ...

Sangmoo Jeong; Erik C. Garnett; Shuang Wang; Zongfu Yu; Shanhui Fan; Mark L. Brongersma; Michael D. McGehee; Yi Cui

2012-04-30T23:59:59.000Z

59

Crystalline-Silicon/Organic Heterojunctions for Solar  

E-Print Network [OSTI]

-semiconductors is potentially cheaper, but the organic solar cells are not very efficient. In this thesis we explore if organic semiconductors can be integrated with silicon to form hybrid organic/silicon solar cells that are both efficient, a silicon/organic heterojunction solar cell with an open-circuit voltage of 0.59 V and power conversion

60

Solar Thin Power | Open Energy Information  

Open Energy Info (EERE)

Power Jump to: navigation, search Name: Solar Thin Power Place: New York Sector: Solar Product: Solar Thin Power was formed to seek out solar projects in North America, Asia and...

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova*  

E-Print Network [OSTI]

1 Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova* , I be minimized throughout the fabrication process. Amorphous silicon thin-film transistors and solar cells, thin-film transistor, solar cell, flexible electronics Phone: (609) 258-4626, Fax: (609) 258-3585, E

62

Plasmonic enhancement of thin-film solar cells using gold-black C.J. Fredricksena  

E-Print Network [OSTI]

Plasmonic enhancement of thin-film solar cells using gold-black coatings C.J. Fredricksena , D. R thin-film amorphous-silicon solar cells enhance the short-circuit current by 20% over a broad spectrum and locally enhance the field strength. Keywords: plasmonics, thin-film, solar cell, metallic nanoparticles

Peale, Robert E.

63

Method for processing silicon solar cells  

DOE Patents [OSTI]

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

1997-05-06T23:59:59.000Z

64

Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell  

E-Print Network [OSTI]

Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell J. Grandidier on top of a solar cell can enhance light absorption and therefore increase its efficiency. Freely photocurrent of the solar cell. On a typical thin film amorphous silicon solar cell, a parametric analysis

Atwater, Harry

65

Laser wafering for silicon solar.  

SciTech Connect (OSTI)

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01T23:59:59.000Z

66

NREL: Energy Analysis - Crystalline Silicon and Thin Film Photovoltaic  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Assessment Harmonization Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics (Fact Sheet) Cover of the Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics factsheet Download the Fact Sheet Over the last 30 years, hundreds of life cycle assessments (LCAs) have been conducted and published for a variety of residential and utility-scale solar photovoltaic (PV) systems with wide-ranging results. The inconsistencies in these results can be attributed to the technologies evaluated-such as differing system designs, real-world versus conceptual systems, or technology improvements over time-and life cycle assessment methods and assumptions. To better understand greenhouse gas (GHG) emissions from commercial

67

Silicon Solar Energy Converters  

Science Journals Connector (OSTI)

Theory is given for the design of siliconsolar energy converters commonly known as the Bell Solar Battery. Values are given for the various parameters in the design theory. Experimental data are presented and compared with the theoretical relations based on a simple model.

M. B. Prince

1955-01-01T23:59:59.000Z

68

Amorphous silicon passivated contacts for diffused junction silicon solar cells  

Science Journals Connector (OSTI)

Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n+) and boron (p+) diffused surfaces decreases by factors of ?25 and ?10 respectively. Conversely the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm2 for n+ and ?100 m? cm2 for p+ surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer as supported by scanning transmission electron microscopyenergy dispersive x-ray maps. We explain the superior contact selectivity obtained on n+ surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

J. Bullock; A. Cuevas

2014-01-01T23:59:59.000Z

69

Amorphous silicon passivated contacts for diffused junction silicon solar cells  

SciTech Connect (OSTI)

Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopyenergy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

Bullock, J., E-mail: james.bullock@anu.edu.au; Yan, D.; Wan, Y.; Cuevas, A. [Research School of Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Demaurex, B.; Hessler-Wyser, A.; De Wolf, S. [cole Polytechnique Fdrale de Lausanne (EPFL), Institute of micro engineering (IMT), Photovoltaics and Thin Film Electronic Laboratory, Maladire 71, CH-200 Neuchtel (Switzerland)

2014-04-28T23:59:59.000Z

70

Engineering Metal Impurities in Multicrystalline Silicon Solar...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

from inexpensive low-grade silicon. Artist's impression of an intense beam of synchrotron light striking a solar cell and the resulting fluorescence image of the distribution of...

71

Highly conductive p-type microcrystalline silicon thin films  

SciTech Connect (OSTI)

In the development of thin film solar cells there is presently an increasing interest in microcrystalline silicon, deposited at low temperatures (200--400 C). The plasma deposition of boron doped microcrystalline films was optimized with respect to crystallinity and doping efficiency. High room temperature conductivities up to 39 Scm{sup {minus}1} were achieved under condition when the energy of positive ions impinging on the growth surface is minimized.

Heintze, M.; Schmitt, M. [Univ. Stuttgart (Germany). Inst. fuer Physikalische Elektronik

1996-12-31T23:59:59.000Z

72

Thin Film Solar Technologies | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Name: Thin Film Solar Technologies Place: South Africa Product: Producers of thin-film copper, indium, gallium, sulphur, selenium modules....

73

Spectroscopic ellipsometry characterization of thin-film silicon nitride  

SciTech Connect (OSTI)

We have measured and analyzed the optical characteristics of a series of silicon nitride thin films prepared by plasma-enhanced chemical vapor deposition on silicon substrates for photovoltaic applications. Spectroscopic ellipsometry measurements were made by using a two-channel spectroscopic polarization modulator ellipsometer that measures N, S, and C data simultaneously. The data were fit to a model consisting of air / roughness / SiN / crystalline silicon. The roughness was modeled using the Bruggeman effective medium approximation, assuming 50% SiN, 50% voids. The optical functions of the SiN film were parameterized using a model by Jellison and Modine. All the {Chi}{sup 2} are near 1, demonstrating that this model works extremely well for all SiN films. The measured dielectric functions were used to make optimized SiN antireflection coatings for crystalline silicon solar cells.

Jellison, G.E. Jr.; Modine, F.A. [Oak Ridge National Lab., TN (United States); Doshi, P.; Rohatgi, A. [Georiga Inst. of Technology, Atlanta, GA (United States)

1997-05-01T23:59:59.000Z

74

The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact  

SciTech Connect (OSTI)

The electronic structure of the interface between the boron-doped oxygenated amorphous silicon 'window layer' (a-SiO{sub x}:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon ({mu}c-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (-2.87 {+-} 0.27) eV and (-3.37 {+-} 0.27) eV, respectively. A lower tunnel junction barrier height at the {mu}c-Si:H(B)/ZnO:Al interface compared to that at the a-SiO{sub x}:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a {mu}c-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.

Gerlach, D.; Wilks, R. G.; Wimmer, M.; Felix, R.; Gorgoi, M.; Lips, K.; Rech, B. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Wippler, D.; Mueck, A.; Meier, M.; Huepkes, J. [Institut fuer Energie- und Klimaforschung, Forschungszentrum Juelich GmbH, Wilhelm-Johnen-Strasse, D-52428 Juelich (Germany); Lozac'h, M.; Ueda, S.; Sumiya, M. [National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Yoshikawa, H. [Synchrotron X-ray Station at SPring-8, NIMS, Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Kobayashi, K. [Quantum Beam Science Directorate, Japan Atomic Energy Agency, Kouto 1-1-1, SPring-8, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Baer, M. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Institut fuer Physik und Chemie, Brandenburgische Technische Universitaet Cottbus, Konrad-Wachsmann-Allee 1, D-03046 Cottbus (Germany)

2013-07-08T23:59:59.000Z

75

20% efficiency silicon solar cells  

Science Journals Connector (OSTI)

Further improvements in crystalline silicon solar cell performance have been obtained by combining the high levels of surface recombination control demonstrated in earlier passivated emitter solar cells with an improved optical approach. This approach involves the use of microgrooved surfaces which retain the advantages of pyramidally textured surfaces while avoiding some disadvantages of the latter. The approach results in a 56% improvement in cell short?circuit current density for cells fabricated on 0.1 and 0.2 ??cm (?p type) substrates. This results in an energy conversion efficiency for these devices above 20% under standard terrestrial test conditions (AM1.5 100 mW/cm2) for the first time.

A. W. Blakers; M. A. Green

1986-01-01T23:59:59.000Z

76

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a  

E-Print Network [OSTI]

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a J. D. Servaites thin-film solar cell types: hydrogenated amorphous silicon a-Si:H p-i-n cells, organic bulk understanding of thin film solar cell device physics, including important module performance variability issues

Alam, Muhammad A.

77

Thin film solar energy collector  

DOE Patents [OSTI]

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

1983-11-22T23:59:59.000Z

78

Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface  

SciTech Connect (OSTI)

The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5+2)nm after SPC could be estimated.

Bar, M.; Wimmer, M.; Wilks, R. G.; Roczen, M.; Gerlach, D.; Ruske, F.; Lips, K.; Rech, B.; Weinhardt, L.; Blum, M.; Pookpanratana, S.; Krause, S.; Zhang, Y.; Heske, C.; Yang, W.; Denlinger, J. D.

2010-04-30T23:59:59.000Z

79

Flexible Solar-Energy Harvesting System on Plastic with Thin-film LC Oscillators Operating Above ft for  

E-Print Network [OSTI]

Flexible Solar-Energy Harvesting System on Plastic with Thin-film LC Oscillators Operating Above ft- This paper presents an energy-harvesting system consisting of amorphous-silicon (a-Si) solar cells and thin of the energy-harvesting system. The solar module consists of solar cells in series operating at an output

80

Modeling and control of thin film surface morphology: application to thin film solar cells  

E-Print Network [OSTI]

materials, thin film solar cell technology stands to benefitThin-film solar cells: Review of materials, technologies and

Huang, Jianqiao

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Plasmonic Back Structures Designed for Efficiency Enhancement of Thin Film Solar Cells  

Science Journals Connector (OSTI)

Metallic back structures with one-dimensional periodic nanoridges attached to thin-film amorphous silicon (a-Si) solar cell are proposed to enhance the cell efficiency in a wide...

Bai, Wenli; Gan, Qiaoqiang; Bartoli, Filbert; Song, Guofeng

82

Integrated photonic structures for light trapping in thin-film Si solar cells  

E-Print Network [OSTI]

We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

Sheng, Xing

83

Fabricating solar cells with silicon nanoparticles  

DOE Patents [OSTI]

A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

2014-09-02T23:59:59.000Z

84

Cheaper Silicon Found Effective for Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Cheaper Silicon Found Effective for Solar Cells Cheaper Silicon Found Effective for Solar Cells A research team from the University of California at Berkeley, Lawrence Berkeley National Laboratory, Argonne National Laboratory, and Pacific Northwest National Laboratory, using U.S. Department of Energy (DOE) synchrotron light sources, has successfully shown that inexpensive silicon has the potential to be used for photovoltaic (PV) devices, commonly known as solar cells. In a new approach-whose findings were published online in Nature Materials (August 14, 2005)-the researchers used nanodefect engineering to control transition metal contamination in order to produce impurity-rich, performance-enhanced multicrystalline silicon (mc-Si) material. "Solar energy is often touted as the most promising and secure energy

85

Arrays of ultrathin silicon solar microcells  

DOE Patents [OSTI]

Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

Rogers, John A; Rockett, Angus A; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

2014-03-25T23:59:59.000Z

86

Manufacture of silicon carbide using solar energy  

DOE Patents [OSTI]

A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

Glatzmaier, Gregory C. (Boulder, CO)

1992-01-01T23:59:59.000Z

87

Plasmonic Thin-Film Solar Cells  

Science Journals Connector (OSTI)

A combined computational-experimental study optimizing plasmon-enhanced absorption in thin film solar cells presented. We investigate the effect of different geometries where...

Pala, Ragip; White, Justin; Brongersma, Mark

88

Three dimensional amorphous silicon/microcrystalline silicon solar cells  

DOE Patents [OSTI]

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

Kaschmitter, J.L.

1996-07-23T23:59:59.000Z

89

High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells  

E-Print Network [OSTI]

. Figure 3-1 IV curve of a UT fabricated triple cell, showing 12.7% initial, active-area efficiency. Figure1 High Efficiency and High Rate Deposited Amorphous Silicon-Based Solar Cells PHASE I Annual-junction a-Si Solar Cells with Heavily Doped Thin Interface Layers at the Tunnel Junctions Section 4 High

Deng, Xunming

90

California: TetraCell Silicon Solar Cell Improves Efficiency...  

Energy Savers [EERE]

California: TetraCell Silicon Solar Cell Improves Efficiency, Wins R&D 100 Award California: TetraCell Silicon Solar Cell Improves Efficiency, Wins R&D 100 Award August 16, 2013 -...

91

GCL Solar Energy Technology Holdings formerly GCL Silicon aka...  

Open Energy Info (EERE)

GCL Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu Zhongneng Polysilicon Jump to: navigation, search Name: GCL Solar Energy Technology Holdings (formerly GCL...

92

Coating for Silicon Solar Cell by Using Silvaco Software  

E-Print Network [OSTI]

efficiency of SiO 2/Si3N 4silicon solar cell. The solar cell structure was modelled by using Silvaco software

A. Lennie; H. Abdullah; Z. M. Shila; M. A. Hannan

93

An Investigation of the Properties of Silicon Nitride (SiNx) Thin Films Prepared by RF Sputtering for Application in Solar Cell Technology  

Science Journals Connector (OSTI)

Silicon nitride films deposited on glass and multicrystalline silicon by RF sputtering with power between 100350W. The target was hot pressed Si3N4 ceramic. The morphology and optical properties of films are inv...

Negin Manavizadeh; Alireza Khodayari

2009-01-01T23:59:59.000Z

94

Thin films for solar control applications  

Science Journals Connector (OSTI)

...properly cited. Thin films for solar control applications Sapna Shrestha...performance of vacuum glazing. Solar Energy 81, 8. ( doi:10...mirrors produced by plasma ion assisted deposition. J. Non-Cryst...and cost of vacuum glazing. Solar Energy 55, 151. ( doi:10...

2010-01-01T23:59:59.000Z

95

Thin Silicon MEMS Contact-Stress Sensor  

SciTech Connect (OSTI)

This thin, MEMS contact-stress (CS) sensor continuously and accurately measures time-varying, solid interface loads in embedded systems over tens of thousands of load cycles. Unlike all other interface load sensors, the CS sensor is extremely thin (< 150 {micro}m), provides accurate, high-speed measurements, and exhibits good stability over time with no loss of calibration with load cycling. The silicon CS sensor, 5 mm{sup 2} and 65 {micro}m thick, has piezoresistive traces doped within a load-sensitive diaphragm. The novel package utilizes several layers of flexible polyimide to mechanically and electrically isolate the sensor from the environment, transmit normal applied loads to the diaphragm, and maintain uniform thickness. The CS sensors have a highly linear output in the load range tested (0-2.4 MPa) with an average accuracy of {+-} 1.5%.

Kotovsky, J; Tooker, A; Horsley, D

2010-03-22T23:59:59.000Z

96

Method of casting silicon into thin sheets  

DOE Patents [OSTI]

Silicon (Si) is cast into thin shapes within a flat-bottomed graphite crucible by providing a melt of molten Si along with a relatively small amount of a molten salt, preferably NaF. The Si in the resulting melt forms a spherical pool which sinks into and is wetted by the molten salt. Under these conditions the Si will not react with any graphite to form SiC. The melt in the crucible is pressed to the desired thinness with a graphite tool at which point the tool is held until the mass in the crucible has been cooled to temperatures below the Si melting point, at which point the Si shape can be removed.

Sanjurjo, Angel (San Jose, CA); Rowcliffe, David J. (Los Altos, CA); Bartlett, Robert W. (Tucson, AZ)

1982-10-26T23:59:59.000Z

97

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Phase II annual subcontract report, 1 January 1985--31 January 1986  

SciTech Connect (OSTI)

This report presents results of the second phase of research on high-efficiency, single-junction, monolithic, thin-film a-Si solar cells. Five glow-discharge deposition systems, including a new in-line, multichamber system, were used to grow both doped and undoped a-Si:H. A large number of silane and disilane gas cylinders were analyzed with a gas chromatography/mass spectroscopy system. Strong correlations were found between the breakdown voltage, the deposition rate, the diffusion length, and the conversion efficiency for varying cathode-anode separations in a DC glow-discharge deposition mode. Tin oxide films were grown by chemical vapor deposition with either tetramethyl tin (TMT) or tin tetrachloride (TTC). The best were grown with TMT, but TTC films had a more controlled texture for light trapping and provided a better contact to the p-layer. The best results were obtained with 7059 glass substrates. Efficiencies as high as 10.86% were obtained in p-i-n cells with superlattice p-layers and as high as 10.74% in cells with both superlattice p- and n-layers. Measurements showed that the boron-doping level in the p-layer can strongly affect transport in the i-layer, which can be minimized by reactive flushing before i-layer deposition. Stability of a-Si:H cells is improved by light doping. 51 refs., 64 figs., 21 tabs.

Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; Catalano, A.; D'Aiello, R.V.; Dickson, C.R.; McVeigh, J.; Newton, J.; O'Dowd, J.; Oswald, R.S.; Rajan, K.

1988-09-01T23:59:59.000Z

98

Development efforts on silicon solar cells  

SciTech Connect (OSTI)

This report presents a summary of the major results from the silicon high-concentration solar cell program at Stanford University from the period 1983--1990. Following a detailed design study, efforts were focused upon experimental verification of the modeled results that predicted 28% efficiencies for a new 500X concentrator solar cell design. A history of the research progress is given detailing the critical experiments that enabled the demonstration of 19.6% cells in 1983, then subsequent improvements culminating in efficiencies over 28% by 1987. In addition to laboratory efficiency improvements, the report details advances in the understanding of the fundamental device physics and modeling of silicon solar cell operation. The latter stages of the program included the development of module-ready cells in large quantity for the EPRI prototype 500X concentrator modules. Several of these 48-cell modules are currently in the field under test.

Sinton, R.A.; Swanson, R.M. (Stanford Univ., CA (United States))

1992-02-01T23:59:59.000Z

99

Indium oxide/n-silicon heterojunction solar cells  

DOE Patents [OSTI]

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1982-12-28T23:59:59.000Z

100

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES  

E-Print Network [OSTI]

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES S. Suresh1 , T.-G. Nieh2 and B.W. Choi2: Mechanical properties; Nano-indentation; Thin films; Copper; Dislocations Introduction Indentation methods films on substrates (e.g., [2,3]) using instrumented indentation. Nano-indentation studies of thin films

Suresh, Subra

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Nanostructured silicon thin films deposited by PECVD in the presence of silicon nanoparticles  

SciTech Connect (OSTI)

Nanostructured silicon thin films have been deposited by plasma enhanced chemical vapor deposition at low substrate temperature (100 C) in the presence of silicon nanoparticles. The nanostructure of the films was revealed by transmission electron microscopy, Raman spectroscopy and X-ray diffraction, which showed ordered silicon domains (1--2 nm) embedded in an amorphous silicon matrix. These ordered domains are due to the particles created in the discharge that contribute to the film growth. One consequence of the incorporation of nanoparticles is the accelerated crystallization of the nanostructured silicon thin films when compared to standard a-Si:H, as shown by the electrical characterization during the annealing.

Viera, G.; Cabarrocas, P.R.; Hamma, S.; Sharma, S.N.; Costa, J.; Bertran, E.

1997-07-01T23:59:59.000Z

102

Efficiency of silicon solar cells containing chromium  

DOE Patents [OSTI]

Efficiency of silicon solar cells containing about 10.sup.15 atoms/cm.sup.3 of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200.degree. C. to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon material.

Frosch, Robert A. Administrator of the National Aeronautics and Space (New Port Beach, CA); Salama, Amal M. (New Port Beach, CA)

1982-01-01T23:59:59.000Z

103

Origami-enabled deformable silicon solar cells  

SciTech Connect (OSTI)

Deformable electronics have found various applications and elastomeric materials have been widely used to reach flexibility and stretchability. In this Letter, we report an alternative approach to enable deformability through origami. In this approach, the deformability is achieved through folding and unfolding at the creases while the functional devices do not experience strain. We have demonstrated an example of origami-enabled silicon solar cells and showed that this solar cell can reach up to 644% areal compactness while maintaining reasonable good performance upon cyclic folding/unfolding. This approach opens an alternative direction of producing flexible, stretchable, and deformable electronics.

Tang, Rui; Huang, Hai; Liang, Hanshuang; Liang, Mengbing [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Tu, Hongen; Xu, Yong [Electrical and Computer Engineering, Wayne State University, 5050 Anthony Wayne Dr., Detroit, Michigan 48202 (United States); Song, Zeming; Jiang, Hanqing, E-mail: hanqing.jiang@asu.edu [School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States); Yu, Hongyu, E-mail: hongyu.yu@asu.edu [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); School of Earth and Space Exploration, Arizona State University, Tempe, Arizona 85287 (United States)

2014-02-24T23:59:59.000Z

104

Laboratory experiments with silicon solar cells  

Science Journals Connector (OSTI)

The uses of silicon solar cells as subjects of experiments in undergraduate teaching laboratories are discussed. The basic theory of these cells is presented including equivalent circuits and characteristic equations. Fundamental experiments on the power output and efficiency which are appropriate for non?science majors courses are detailed as well as more advanced experiments on cell parameters. Experimental results and agreement with theory are presented for a typical inexpensive cell.

D. W. Kammer; M. A. Ludington

1977-01-01T23:59:59.000Z

105

Hole Selective MoOx Contact for Silicon Solar Cells  

Science Journals Connector (OSTI)

Hole Selective MoOx Contact for Silicon Solar Cells ... This work has important implications toward enabling a novel class of junctionless devices with applications for solar cells, light-emitting diodes, photodetectors, and transistors. ... Junctionless solar cells; silicon photovoltaics; heterojunctions; dopant-free contact; molybdenum trioxide ...

Corsin Battaglia; Xingtian Yin; Maxwell Zheng; Ian D. Sharp; Teresa Chen; Stephen McDonnell; Angelica Azcatl; Carlo Carraro; Biwu Ma; Roya Maboudian; Robert. M. Wallace; Ali Javey

2014-01-07T23:59:59.000Z

106

Investigating the efficiency of Silicon Solar cells at  

E-Print Network [OSTI]

Investigating the efficiency of Silicon Solar cells at different temperatures and wavelengths to study the characteristics of silicon photovoltaic cells (solar cells). We vary the wavelength of light as well as the temperature of the solar cell to investigate how the open voltage across the cell varies

Attari, Shahzeen Z.

107

A review on plasma-assisted VLS synthesis of silicon nanowires and radial junction solar cells  

Science Journals Connector (OSTI)

Incorporation of nanostructures is a recent trend in the photovoltaic community, aimed at improving light absorption and consequently cell efficiency. In this regard, semiconductor nanowires provide an attractive research platform for a new generation of cost-effective and efficient solar cells. Thanks to their unique geometry, silicon nanowires enhance light trapping and anti-reflection effects by means of multiple scattering between individual nanowires, and by coupling the light into confined eigenmodes over a broad range of the solar spectrum. Moreover, radial junction solar cells built around nanowires decouple the light absorption and carrier collection directions, which allows for a higher internal field and better carrier collection. Thus, arrays of radial junction solar cells bring advantages of high efficiency with reduced material amount. This is particularly attractive for devices based on hydrogenated amorphous and microcrystalline silicon thin films. In this paper, after reviewing different approaches to fabricate silicon nanowires, we focus on nanowires grown using the plasma-assisted vapourliquidsolid method because of the simplicity and compatibility with current silicon thin-film technology. Their application to a-Si?:?H based radial junction solar cells has already resulted in ~8% of stable devices with an absorber layer thickness of only 100nm. Moreover, current challenges and perspectives such as the use of a microcrystalline silicon absorber are also reviewed.

Soumyadeep Misra; Linwei Yu; Wanghua Chen; Martin Foldyna; Pere Roca i Cabarrocas

2014-01-01T23:59:59.000Z

108

Project Profile: Development and Productization of High-Efficiency, Low-Cost Building-Integrated PV Shingles Using Monocrystalline Silicon Thin-Film Solar Cells  

Broader source: Energy.gov [DOE]

The Solexel-OC team is developing a BIPV roofing shingle product that includes low-profile solar modules and a unique attachment system that will be fastened directly to the roof and incorporates...

109

High-efficiency third-generation silicon solar cells  

Science Journals Connector (OSTI)

The results of investigating third-generation matrix silicon solar cells with an efficiency of more than 25% during conversion of concentrated solar radiation are given. Electrical and optical characteristics ......

D. S. Strebkov; V. I. Polyakov

2011-08-01T23:59:59.000Z

110

Heterojunction solar cells produced by porous silicon layer transfer technology  

Science Journals Connector (OSTI)

In this paper, we present the result of heterojunction solar cells based on porous silicon layer transfer technology. a-Si/c-Si structured solar cells were prepared in which the c-Si ... was investigated. The spe...

Zhihao Yue; Honglie Shen; Lei Zhang; Bin Liu; Chao Gao; Hongjie Lv

2012-09-01T23:59:59.000Z

111

A High Efficiency Silicon Solar Cell Production Technology  

Science Journals Connector (OSTI)

BP Solar have developed a cost-effective production technology for the manufacture of high efficiency laser grooved buried grid (LGBG) crystalline silicon solar cells. The process has demonstrated 1718% ... a ne...

N. B. Mason; D. Jordan; J. G. Summers

1991-01-01T23:59:59.000Z

112

Microstructure and properties of copper thin films on silicon substrates  

E-Print Network [OSTI]

copper thin films but on an expense of conductivity. This study proposes a technique to deposit high strength and high conductivity copper thin films on different silicon substrates at room temperature. Single crystal Cu (100) and Cu (111) have been grown...

Jain, Vibhor Vinodkumar

2009-05-15T23:59:59.000Z

113

Hybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong,  

E-Print Network [OSTI]

alternative energy solution. KEYWORDS: Nanotexture, solar cell, heterojunction, conductive polymer, light solar cell.1 Conventional Si solar cells have p-n junctions inside for an efficient extraction of lightHybrid Silicon Nanocone-Polymer Solar Cells Sangmoo Jeong, Erik C. Garnett, Shuang Wang, Zongfu Yu

Cui, Yi

114

27. 5-percent silicon concentrator solar cells  

SciTech Connect (OSTI)

Recent advances in silicon solar cells using the backside point-contact configuration have been extended resulting in 27.5-percent efficiencies at 10 W/sq cm (100 suns, 24 C), making these the most efficient solar cells reported to date. The one-sun efficiencies under an AM1.5 spectrum normalized to 100 mW/sq cm are 22 percent at 24 C based on the design area of the concentrator cell. The improvements reported here are largely due to the incorportation of optical light trapping to enhance the absorption of weakly absorbed near bandgap light. These results approach the projected efficiencies for a mature technology which are 23-24 percent at one sun and 29 percent in the 100-350-sun (10-35 W/sq cm) range. 10 references.

Sinton, R.A.; Kwark, Y.; Gan, J.Y.; Swanson, R.M.

1986-10-01T23:59:59.000Z

115

Metal catalyst technique for texturing silicon solar cells  

DOE Patents [OSTI]

Textured silicon solar cells and techniques for their manufacture utilizing metal sources to catalyze formation of randomly distributed surface features such as nanoscale pyramidal and columnar structures. These structures include dimensions smaller than the wavelength of incident light, thereby resulting in a highly effective anti-reflective surface. According to the invention, metal sources present in a reactive ion etching chamber permit impurities (e.g. metal particles) to be introduced into a reactive ion etch plasma resulting in deposition of micro-masks on the surface of a substrate to be etched. Separate embodiments are disclosed including one in which the metal source includes one or more metal-coated substrates strategically positioned relative to the surface to be textured, and another in which the walls of the reaction chamber are pre-conditioned with a thin coating of metal catalyst material.

Ruby, Douglas S. (Albuquerque, NM); Zaidi, Saleem H. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

116

Thin film absorber for a solar collector  

DOE Patents [OSTI]

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, William G. (Cutchogue, NY)

1985-01-01T23:59:59.000Z

117

Conducting polymer and hydrogenated amorphous silicon hybrid solar cells  

E-Print Network [OSTI]

November 2005 An organic-inorganic hybrid solar cell with a p-i-n stack structure has been investigated for their potential in electronic devices such as organic light emitting diodes OLEDs , solar cells, photode- tectorsConducting polymer and hydrogenated amorphous silicon hybrid solar cells Evan L. Williams

Schiff, Eric A.

118

EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques  

E-Print Network [OSTI]

;3 Screen Printed Solar Cells · Firing the contacts ­ The furnace heats the cell to a high temperature & Metal Closeup 14 Front and Back of Screen Printed Solar Cell 15 Crystallization Furnace for Ingot1 EELE408 Photovoltaics Lecture 16: Silicon Solar Cell Fabrication Techniques Dr. Todd J. Kaiser

Kaiser, Todd J.

119

Solar cell structure incorporating a novel single crystal silicon material  

DOE Patents [OSTI]

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

1983-01-01T23:59:59.000Z

120

Simulation of iron impurity gettering in crystalline silicon solar cells  

E-Print Network [OSTI]

This work discusses the Impurity-to-Efficiency (12E) simulation tool and applet. The 12E simulator models the physics of iron impurity gettering in silicon solar cells during high temperature processing. The tool also ...

Powell, Douglas M. (Douglas Michael)

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Advanced cost-effective crystalline silicon solar cell technologies  

Science Journals Connector (OSTI)

An overview is given concerning current industrial technologies, near future improvements and medium-term developments in the field of industrially viable crystalline silicon terrestrial solar cell fabrication (without concentration).

J.F Nijs; J Szlufcik; J Poortmans; S Sivoththaman; R.P Mertens

2001-01-01T23:59:59.000Z

122

Polyaniline on crystalline silicon heterojunction solar cells Weining Wanga  

E-Print Network [OSTI]

-Si have long been of fundamental interest, and amorphous silicon a-Si:H /c-Si heterojunctions are now is about the current limit achieved with a-Si:H/c-Si heterojunctions. The largest VOC we ob- tained was 0Polyaniline on crystalline silicon heterojunction solar cells Weining Wanga and E. A. Schiff

Schiff, Eric A.

123

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A substrate is described for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3{times}10{sup {minus}3} ohm-cm. 4 figs.

Ciszek, T.F.

1998-07-28T23:59:59.000Z

124

Japan Solar Silicon Co Ltd JSS | Open Energy Information  

Open Energy Info (EERE)

Japan Solar Silicon Co Ltd JSS Japan Solar Silicon Co Ltd JSS Jump to: navigation, search Name Japan Solar Silicon Co Ltd (JSS) Place Tokyo, Japan Sector Solar Product A JV company between Chisso, Nippon Mining Holdings, and Toho Titanium, to manufacture and retail solar-grade polysilicon. Coordinates 35.670479°, 139.740921° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":35.670479,"lon":139.740921,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

125

Silicon Valley Power - Solar Electric Buy Down Program | Department of  

Broader source: Energy.gov (indexed) [DOE]

Solar Electric Buy Down Program Solar Electric Buy Down Program Silicon Valley Power - Solar Electric Buy Down Program < Back Eligibility Commercial Residential Savings Category Solar Buying & Making Electricity Maximum Rebate Residential: $20,000 Program Info State California Program Type Utility Rebate Program Rebate Amount Incentives step down over time as installed capacity goals are met. Check program web site for current incentive level. '''Rebate levels as of 9/20/12:''' Residential: $2.00/watt AC Commercial (up to 100 kW): $1.10/watt AC Commercial (>100 kW to 1 MW): $0.15/kWh for 5 years Provider Silicon Valley Power Silicon Valley Power (SVP) offers incentives for the installation of new grid-connected solar electric (photovoltaic, or PV) systems. Incentive levels will step down over the life of the program as certain installed

126

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Transition metals are one of the main culprits in degrading the efficiency of multicrystalline solar cells. With a suite of x-ray microprobe techniques, a multi-institutional collaboration led by researchers from the University of California, Berkeley, and Berkeley Lab studied the distribution of metal clusters in a variety of multicrystalline solar cells before and after processing. Their discovery that the size, spatial distribution, and chemical binding of metals within clusters is just as important as the total metal concentration in limiting the performance of multicrystalline silicon solar cells led to the concept of defect engineering by optimizing growth and processing sequences to trap metals in their least harmful state.

127

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Transition metals are one of the main culprits in degrading the efficiency of multicrystalline solar cells. With a suite of x-ray microprobe techniques, a multi-institutional collaboration led by researchers from the University of California, Berkeley, and Berkeley Lab studied the distribution of metal clusters in a variety of multicrystalline solar cells before and after processing. Their discovery that the size, spatial distribution, and chemical binding of metals within clusters is just as important as the total metal concentration in limiting the performance of multicrystalline silicon solar cells led to the concept of defect engineering by optimizing growth and processing sequences to trap metals in their least harmful state.

128

Nanoarrays for Light Management in Thin Film Solar Cells  

Science Journals Connector (OSTI)

We report the use of plasmonic and photonic nanoarray to achieve light management in thin film solar cells. Theoretical and experimental data will be presented.

Ji, Jin; Nasr, Magued B; McCutcheon, Murray W; Herring, Cy

129

Low-Cost Light Weigh Thin Film Solar Concentrators  

Broader source: Energy.gov (indexed) [DOE]

Light Weight Thin Film Solar Concentrators PI: Gani B. Ganapathi (JPLCaltech) Other Contributors: L'Garde: Art Palisoc, Gyula Greschik, Koorosh Gidanian JPL: Bill Nesmith,...

130

Optical Property of Silicon Based Nanostructure and Fabrication of Silicon Nanostructure Solar Cells  

Science Journals Connector (OSTI)

Several types of silicon nanostructures have been achieved through a silver-assisted electroless etching technique. Radial p-n junction solar cells were designed and fabricated, and a...

Li, Meicheng

131

Modeling of thin-film solar thermoelectric generators  

E-Print Network [OSTI]

Recent advances in solar thermoelectric generator (STEG) performance have raised their prospect as a potential technology to convert solar energy into electricity. This paper presents an analysis of thin-film STEGs. ...

Weinstein, Lee Adragon

132

Thermal Conductance of Thin Silicon Nanowires  

Science Journals Connector (OSTI)

The thermal conductance of individual single crystalline silicon nanowires with diameters less than 30nm has been measured from 20to 100K. The observed thermal conductance shows unusual linear temperature dependence at low temperatures, as opposed to the T3 dependence predicted by the conventional phonon transport model. In contrast to previous models, the present study suggests that phonon-boundary scattering is highly frequency dependent, and ranges from nearly ballistic to completely diffusive, which can explain the unexpected linear temperature dependence.

Renkun Chen, Allon I. Hochbaum, Padraig Murphy, Joel Moore, Peidong Yang, and Arun Majumdar

2008-09-02T23:59:59.000Z

133

Copper doped polycrystalline silicon solar cell  

DOE Patents [OSTI]

Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

Lovelace, Alan M. Administrator of the National Aeronautics and Space (La Canada, CA); Koliwad, Krishna M. (La Canada, CA); Daud, Taher (La Crescenta, CA)

1981-01-01T23:59:59.000Z

134

CURRENT NEWS Sandwich Solar Cells May See Off Silicon  

E-Print Network [OSTI]

CURRENT NEWS Sandwich Solar Cells May See Off Silicon May 24, 2010 A new manufacturing technique of devices using GaAs chips manufactured in multilayer stacks: light sensors, high-speed transistors and solar cells. The authors also provide a detailed cost comparison. Another advantage of the multilayer

Rogers, John A.

135

E-Print Network 3.0 - amorphous silicon solar Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for a research organization in the optimization of the amorphous silicon solar cell... photovoltaics on flexible substrates. Managed amorphous silicon research program...

136

E-Print Network 3.0 - amorphous-silicon-based solar cell Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Vol. 609 2000 Materials Research Society Preparation of Microcrystalline Silicon Based Solar Cells at High i-layer Summary: light exposure as do the amorphous silicon-based...

137

NREL Develops ZnSiP2 for Silicon-Based Tandem Solar Cells (Fact Sheet)  

SciTech Connect (OSTI)

Combining an Earth-abundant chalcopyrite with a silicon layer could significantly boost conversion efficiency above that of single-junction silicon solar cells.

Not Available

2014-08-01T23:59:59.000Z

138

Solar grade silicon: Technology status and industrial trends  

Science Journals Connector (OSTI)

Abstract Crystalline silicon remains (all variants included) the dominant technology to manufacture solar cells. Currently (20122013) more than 90% of all solar cells produced are based on this vast group of technologies. The availability, the cost and the quality to the silicon feedstock is therefore a strategic issue of paramount importance for the entire photovoltaic sector. The silicon demand/supply balance has evolved from a situation of shortage with rocketing sales prices, in the years 20052008, to currently (20122013) an oversupply situation with record low price level for virgin polysilicon. Between these two extreme periods, production capacity has been multiplied by a factor of nearly 10. A better understanding of the prevailing dynamics in the polysilicon/silicon industry is needed in order for all players in the solar cell industry to make proper planning. In light of the past developments as well as the constraints imposed by a sound competition, the present article reviews the market trends for solar grade silicon including capacity, supply, demand and price. Furthermore, the article reviews the competing commercial technologies i.e. Siemens polysilicon, fluidized bed reactor/FBR polysilicon and upgraded metallurgical/UMG silicon and compares them in terms of maturity, improvement potential, product morphology, purity, applications and cost (actual vs. potential).

Gran Bye; Bruno Ceccaroli

2014-01-01T23:59:59.000Z

139

Numerical simulations for high efficiency HIT solar cells using microcrystalline silicon as emitter and back surface field (BSF) layers  

Science Journals Connector (OSTI)

Abstract In present article the influence of thickness and band gap of microcrystalline silicon emitter layer, amorphous silicon front and back intrinsic layers and p-type crystalline silicon (c-Si) wafer thickness on the performance of TCO/?c-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(i)/?c-Si:H(p+)/Ag Heterojunction with thin intrinsic layer (HIT) solar cell along with other structural possibilities were investigated through computer simulations using AFORS-HET software. These simulations revealed the importance of inclusion of intrinsic a-Si:H thin layer in improving the performance of solar cell with the help of interface passivation. Also microcrystalline BSF can raise the conversion efficiency more than 4% compared to HIT solar cell having no BSF layer. Highest stable efficiency of 24.12% for p-type substrate based HITBSF (HIT with back surface field) solar cells was observed. Furthermore the effect of textured transparent conductive oxide (TCO) on solar cells was investigated where the enhanced light trapping was observed with the use of textured TCO surface which raised the performance of solar cells. These optimizations may help in fabricating ?c-Si emitter and BSF based HIT solar cells with stable efficiencies compared to possibly degraded efficiencies as in case of a-Si:H based HIT solar cell structures studied so far.

Arti Rawat; Mansi Sharma; Deepika Chaudhary; S. Sudhakar; Sushil Kumar

2014-01-01T23:59:59.000Z

140

Amorphous silicon thin film transistor as nonvolatile device.  

E-Print Network [OSTI]

particles before loaded into the deposition chamber. 2.2.2. Equipment for Plasma Processes Plasma-Enhanced Chemical Vapor...: Dr. Yue Kuo n-channel and p-channel amorphous-silicon thin-film transistors (a-Si:H TFTs) with copper electrodes prepared by a novel plasma etching process have been fabricated and studied. Their characteristics are similar to those of TFTs...

Nominanda, Helinda

2008-10-10T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Formation of thin-film resistors on silicon substrates  

DOE Patents [OSTI]

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

1988-11-01T23:59:59.000Z

142

Efficiency improvement of silicon nanostructure-based solar cells  

Science Journals Connector (OSTI)

Solar cells based on a high-efficiency silicon nanostructure (SNS) were developed using a two-step metal-assisted electroless etching (MAEE) technique, phosphorus silicate glass (PSG) doping and screen printing. This process was used to produce solar cells with a silver nitrate (AgNO3) etching solution in different concentrations. Compared to cells produced using the single MAEE technique, SNS-based solar cells produced with the two-step MAEE technique showed an increase in silicon surface coverage of ~181.1% and a decrease in reflectivity of ~144.3%. The performance of the SNS-based solar cells was found to be optimized (~11.86%) in an SNS with a length of ~300nm, an aspect ratio of ~5, surface coverage of ~84.9% and a reflectivity of ~6.1%. The ~16.8% increase in power conversion efficiency (PCE) for the SNS-based solar cell indicates good potential for mass production.

Bohr-Ran Huang; Ying-Kan Yang; Wen-Luh Yang

2014-01-01T23:59:59.000Z

143

Transmissive metallic contact for amorphous silicon solar cells  

DOE Patents [OSTI]

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Madan, A.

1984-11-29T23:59:59.000Z

144

Improvement of pin-type amorphous silicon solar cell performance by employing double silicon-carbide p-layer structure  

E-Print Network [OSTI]

Improvement of pin-type amorphous silicon solar cell performance by employing double silicon-carbide Received 30 October 2003; accepted 18 November 2003 We investigated a double silicon-carbide p-layer structure consisting of a undiluted p-type amorphous silicon-carbide (p-a-SiC:H) window layer and a hydrogen

Kim, Yong Jung

145

Statistical equilibrium of silicon in the solar atmosphere  

E-Print Network [OSTI]

The statistical equilibrium of neutral and ionised silicon in the solar photosphere is investigated. Line formation is discussed and the solar silicon abundance determined. High-resolution solar spectra were used to determine solar $\\log gf\\epsilon_{\\rm Si}$ values by comparison with Si line synthesis based on LTE and NLTE level populations. The results will be used in a forthcoming paper for differential abundance analyses of metal-poor stars. A detailed analysis of silicon line spectra leads to setting up realistic model atoms, which are exposed to interactions in plane-parallel solar atmospheric models. The resulting departure coefficients are entered into a line-by-line analysis of the visible and near-infrared solar silicon spectrum. The statistical equilibrium of \\ion{Si}{i} turns out to depend marginally on bound-free interaction processes, both radiative and collisional. Bound-bound interaction processes do not play a significant role either, except for hydrogen collisions, which have to be chosen adequately for fitting the cores of the near-infrared lines. Except for some near-infrared lines, the NLTE influence on the abundances is weak. Taking the deviations from LTE in silicon into account, it is possible to calculate the ionisation equilibrium from neutral and ionised lines. The solar abundance based on the experimental $f$-values of Garz corrected for the Becker et al.'s measurement is $7.52 \\pm 0.05$. Combined with an extended line sample with selected NIST $f$-values, the solar abundance is $7.52 \\pm 0.06$, with a nearly perfect ionisation equilibrium of $\\Delta\\log\\epsilon_\\odot(\\ion{Si}{ii}/\\ion{Si}{i}) = -0.01$.

J. R. Shi; T. Gehren; K. Butler; L. I. Mashonkina; G. Zhao

2008-05-23T23:59:59.000Z

146

Thermal Conductivity of Ordered Mesoporous Nanocrystalline Silicon Thin Films Made from Magnesium Reduction of Polymer-  

E-Print Network [OSTI]

Thermal Conductivity of Ordered Mesoporous Nanocrystalline Silicon Thin Films Made from Magnesium-assembly of mesoporous silica followed by magnesium reduction. The periodic ordering of pores in mesoporous silicon

Pilon, Laurent

147

The analysis and optimization of a spherical silicon solar cell  

E-Print Network [OSTI]

THE ANALYSIS AND OPTIMIZATION OF A SPHERICAL SILICON SOLAR CELL A Thesis by William Randall McKee /'' Submitted to the Graduate College of Texas A&M University in partial fulfillment of the requirement for the degree of MASTER OF SCIENCE... August 1976 Ma]or Subject: Electrical Engineering THE ANALYSIS AND OPTIMIZATION OF A SPHERICAL SILICON SOLAR CELL A Thesis by William Randall McKee Approved as to style and content by: (Chai. rman of Committee) (H of D partment) (Member) 2D...

McKee, William Randall

2012-06-07T23:59:59.000Z

148

Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light-Trapping Nanocone Gratings  

E-Print Network [OSTI]

Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light ABSTRACT: Enhancing the light absorption in ultrathin-film silicon solar cells is important for improving in the back reflector. KEYWORDS: Solar cells, light trapping, antireflection, crystalline silicon, absorption

Fan, Shanhui

149

Solar EnerTech PAIS Jin Yu Silicon Wuhai Municipal Gvrnt JV | Open Energy  

Open Energy Info (EERE)

PAIS Jin Yu Silicon Wuhai Municipal Gvrnt JV PAIS Jin Yu Silicon Wuhai Municipal Gvrnt JV Jump to: navigation, search Name Solar EnerTech, PAIS, Jin Yu Silicon, & Wuhai Municipal Gvrnt JV Place Inner Mongolia Autonomous Region, China Sector Solar Product A solar silicon processing joint venture between Solar EnerTech, PAIS, Jin Yu Silicon, and the Wuhai Municipal Government was formed. References Solar EnerTech, PAIS, Jin Yu Silicon, & Wuhai Municipal Gvrnt JV[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar EnerTech, PAIS, Jin Yu Silicon, & Wuhai Municipal Gvrnt JV is a company located in Inner Mongolia Autonomous Region, China . References ↑ "[ Solar EnerTech, PAIS, Jin Yu Silicon, & Wuhai Municipal

150

Anisotropic dewetting in ultra-thin single-crystal silicon-on-insulator films  

E-Print Network [OSTI]

The single crystal silicon-on-insulator thin film materials system represents both an ideal model system for the study of anisotropic thin film dewetting as well as a technologically important system for the development ...

Danielson, David T. (David Thomas)

2008-01-01T23:59:59.000Z

151

ITO, Si3N4 and ZnO: Al -- Simulation of Different Anti-reflection Coatings (ARC) for Thin Film a-Si:H Solar Cells  

Science Journals Connector (OSTI)

For thin film solar cells incorporating amorphous silicon (a-Si:H) as absorber materials, minimizing reflection from the top surface i.e. maximizing transmittance of the incoming light into the absorber for higher absorption plays an important role for ... Keywords: ARC, TCO, ITO, Si3N4, ZnO:Al, Solar cell

Kazi Islam; Aaesha Alnuaimi; Helmy Ally; Ammar Nayfeh

2013-11-01T23:59:59.000Z

152

NREL Success Stories - Quest for Inexpensive Silicon Solar Cells  

ScienceCinema (OSTI)

Scientists at the National Renewable Energy Laboratory (NREL) share their story about a successful partnership with Oak Ridge National Laboratory and the Ampulse Corporation and how support from the US Department of Energy's Technology Commercialization & Deployment Fund has helped it and their silicon solar cell research thrive.

Branz, Howard

2013-05-29T23:59:59.000Z

153

Status, Technology and Development of Silicon Solar Cells at Iner  

Science Journals Connector (OSTI)

The current solar cells processing at INER are single crystal silicon with 1.22.8 ?-cm resistivity. They are thermal diffused n on p or p on n type cells with Ti/Pd/Ag metallization and Ta2O5 AR coating. Some wo...

S. S. Jao; H. H. Tseng; C. Cheng; Y. C. Tzeng

1981-01-01T23:59:59.000Z

154

Silicon Microwire Arrays for Solar Energy-Conversion Applications  

Science Journals Connector (OSTI)

Silicon Microwire Arrays for Solar Energy-Conversion Applications ... The Si MW array geometry allows for efficient collection of photogenerated carriers from impure materials that have short minority-carrier diffusion lengths while simultaneously allowing for high optical absorption and high external quantum yields for charge-carrier collection. ...

Emily L. Warren; Harry A. Atwater; Nathan S. Lewis

2013-12-09T23:59:59.000Z

155

E-Print Network 3.0 - amorphous-silicon-based thin-film photovoltaic...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

CELLS... . 1. Transmittance modulation spectrum TT for an amorphous silicon-based pin solar cell prepared... . ACKNOWLEDGMENTS This research has been supported through the ......

156

Dyadic Greens functions of thin films: Applications within plasmonic solar cells  

Science Journals Connector (OSTI)

Optimization and design of silicon solar cells by exploiting light scattering from metal nanoparticles to increase the efficiency is addressed in the small particle limit from a fundamental point of view via the dyadic Greens function formulation. Based on the dyadic Greens function (Greens tensor) of a three-layer geometry, light scattering from electric point dipoles (representing small metal scatterers) located within a thin layer sandwiched between a substrate and a superstrate is analyzed. Starting from the full dyadic Greens function we derive analytical near- and far-field approximations. The far-field approximations enable efficient, exact, and separate evaluation of light scattering into waves that propagate in the substrate or the superstrate. Based on the near-field approximation we present a semianalytical expression for the total near-field absorption in the substrate. The theoretical approach is used to analyze realistic configurations for plasmon-assisted silicon solar cells. We show that by embedding metal nanoscatterers in a thin film with a high refractive index (rutile TiO2 with n?2.5) on top of the silicon, the fraction of scattered light that couples into the solar cell can become larger than 96%, and an optical path length enhancement of more than 100 can be achieved.

Jesper Jung; Thomas Sndergaard; Thomas Garm Pedersen; Kjeld Pedersen; Arne Nylandsted Larsen; Brian Bech Nielsen

2011-02-23T23:59:59.000Z

157

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

158

GCL Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu  

Open Energy Info (EERE)

Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu Solar Energy Technology Holdings formerly GCL Silicon aka Jiangsu Zhongneng Polysilicon Jump to: navigation, search Name GCL Solar Energy Technology Holdings (formerly GCL Silicon, aka Jiangsu Zhongneng Polysilicon) Place Xuzhou, Jiangsu Province, China Zip 221131 Sector Solar Product China-based solar grade polysilicon producer. Coordinates 34.255489°, 117.190201° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":34.255489,"lon":117.190201,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

159

Disorder improves nanophotonic light trapping in thin-film solar cells  

SciTech Connect (OSTI)

We present a systematic experimental study on the impact of disorder in advanced nanophotonic light-trapping concepts of thin-film solar cells. Thin-film solar cells made of hydrogenated amorphous silicon were prepared on imprint-textured glass superstrates. For periodically textured superstrates of periods below 500?nm, the nanophotonic light-trapping effect is already superior to state-of-the-art randomly textured front contacts. The nanophotonic light-trapping effect can be associated to light coupling to leaky waveguide modes causing resonances in the external quantum efficiency of only a few nanometer widths for wavelengths longer than 500?nm. With increasing disorder of the nanotextured front contact, these resonances broaden and their relative altitude decreases. Moreover, overall the external quantum efficiency, i.e., the light-trapping effect, increases incrementally with increasing disorder. Thereby, our study is a systematic experimental proof that disorder is conceptually an advantage for nanophotonic light-trapping concepts employing grating couplers in thin-film solar cells. The result is relevant for the large field of research on nanophotonic light trapping in thin-film solar cells which currently investigates and prototypes a number of new concepts including disordered periodic and quasi periodic textures.

Paetzold, U. W., E-mail: u.paetzold@fz-juelich.de; Smeets, M.; Meier, M.; Bittkau, K.; Merdzhanova, T.; Smirnov, V.; Carius, R.; Rau, U. [IEK5Photovoltaik, Forschungszentrum Jlich GmbH, 52425 Jlich (Germany); Michaelis, D.; Waechter, C. [Fraunhofer Institut fr Angewandte Optik und Feinmechanik, Albert Einstein Str. 7, D-07745 Jena (Germany)

2014-03-31T23:59:59.000Z

160

Laser scribing of CIGS based thin films solar cells  

Science Journals Connector (OSTI)

Laser scribing tests on CIGS based thin films solar cells have been performed. The obtained high quality incisions show that laser scribing is a valuable tool for producing low-cost...

Sozzi, Michele; Menossi, Daniele; Bosio, Alessio; Cucinotta, Annamaria; Romeo, Nicola; Selleri, Stefano

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Photonic assisted light trapping integrated in ultrathin crystalline silicon solar cells by nanoimprint lithography  

E-Print Network [OSTI]

We report on the fabrication of two-dimensional periodic photonic nanostructures by nanoimprint lithography and dry etching, and their integration into a 1-{\\mu}m-thin mono-crystalline silicon solar cell. Thanks to the periodic nanopatterning, a better in-coupling and trapping of light is achieved, resulting in an absorption enhancement. The proposed light trapping mechanism can be explained as the superposition of a graded index effect and of the diffraction of light inside the photoactive layer. The absorption enhancement is translated into a 23% increase in short-circuit current, as compared to the benchmark cell, resulting in an increase in energy-conversion efficiency.

Trompoukis, Christos; Depauw, Valrie; Gordon, Ivan; Poortmans, Jef; 10.1063/1.4749810.

2012-01-01T23:59:59.000Z

162

Method for forming indium oxide/n-silicon heterojunction solar cells  

DOE Patents [OSTI]

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

1984-03-13T23:59:59.000Z

163

Formation and post-deposition compression of smooth and processable silicon thin films from nanoparticle suspensions  

E-Print Network [OSTI]

nanoparticle suspensions Noah T. Jafferisa) and James C. Sturm Department of Electrical Engineering, Princeton and processable silicon thin-films from single-crystal silicon-nanoparticle suspensions. Single-crystal Si-nanoparticles on printing silicon from nanoparticles has shown much promise.3,4 Ha¨rting et al.4 report screen-printed films

164

Ultra-low reflection porous silicon nanowires for solar cell applications  

E-Print Network [OSTI]

Ultra-low reflection porous silicon nanowires for solar cell applications A. Najar,1, * J. Charrier aligned Porous Silicon NanoWires (PSiNWs) were fabricated on silicon substrate using metal assisted a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide

Paris-Sud XI, Université de

165

The Silicon Solar Cell Turns 50  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Daryl Chapin, Calvin Fuller, and Gerald Daryl Chapin, Calvin Fuller, and Gerald Pearson likely never imagined inventing a solar cell that would revolutionize the photovoltaics industry. There wasn't even a photovoltaics industry to revolu- tionize in 1952. The three scientists were simply trying to solve problems within the Bell tele- phone system. Traditional dry cell batteries, which worked fine in mild climates, degraded too rapidly in the tropics and ceased to work when needed. The company therefore asked its famous research arm-Bell Laboratories-to explore alternative sources of freestand- ing power. Daryl Chapin got the assign- ment. At that time, his job was to test wind machines, thermoelectric gensets, and steam engines. Being a solar energy enthusiast, he suggested that the investi- gation include solar cells. His supervisor

166

Ultra-Thin Metal Films for Enhanced Solar Absorption  

E-Print Network [OSTI]

This paper presents modelled results for optical absorption in ultra-thin films of nickel, gold and silver over the solar spectrum. It is found in the case of nickel there is an optimum thickness for maximum solar absorption around 10-13nm. This effect is not observed for gold or silver. It is postulated that this is an interference effect occurring due the particular real and imaginary refractive profile of nickel across the solar spectrum.

Ahmad, N; Teng, M; Cryan, M J

2012-01-01T23:59:59.000Z

167

High-efficiency concentrator silicon solar cells  

SciTech Connect (OSTI)

This report presents results from extensive process development in high-efficiency Si solar cells. An advanced design for a 1.56-cm{sup 2} cell with front grids achieved 26% efficiency at 90 suns. This is especially significant since this cell does not require a prismatic cover glass. New designs for simplified backside-contact solar cells were advanced from a status of near-nonfunctionality to demonstrated 21--22% for one-sun cells in sizes up to 37.5 cm{sup 2}. An efficiency of 26% was achieved for similar 0.64-cm{sup 2} concentrator cells at 150 suns. More fundamental work on dopant-diffused regions is also presented here. The recombination vs. various process and physical parameters was studied in detail for boron and phosphorous diffusions. Emitter-design studies based solidly upon these new data indicate the performance vs design parameters for a variety of the cases of most interest to solar cell designers. Extractions of p-type bandgap narrowing and the surface recombination for p- and n-type regions from these studies have a generality that extends beyond solar cells into basic device modeling. 68 refs., 50 figs.

Sinton, R.A.; Cuevas, A.; King, R.R.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

1990-11-01T23:59:59.000Z

168

Photon Management in Thin Film Solar Cells  

Science Journals Connector (OSTI)

We analyze the absorption enhancement in single and tandem solar-cells comprising nanostructures that increase the path of the photons inside the solar cell. For this purpose we...

Rockstuhl, Carsten; Fahr, Stephan; Paul, Thomas; Menzel, Christoph; Bittkau, Karsten; Beckers, Thomas; Carius, Reinhard; Lederer, Falk

169

Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint  

SciTech Connect (OSTI)

We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

2011-07-01T23:59:59.000Z

170

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

Sites, James R.

171

Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs |  

Broader source: Energy.gov (indexed) [DOE]

Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs November 2, 2010 - 2:00pm Addthis REC Silicon received a $154 million 48C tax credit for a $1.7 billion expansion of its Moses Lake, WA, plant. | Photo courtesy of REC Silicon | REC Silicon received a $154 million 48C tax credit for a $1.7 billion expansion of its Moses Lake, WA, plant. | Photo courtesy of REC Silicon | Stephen Graff Former Writer & editor for Energy Empowers, EERE In most industries, if it's expensive to make, it's probably expensive to buy. This is particularly evident in the solar world. Refining the raw material used in photovoltaic panels, silicon, is not a cheap endeavor, and has kept the price of panels more expensive than other energy sources.

172

Interaction between process technology and material quality during the processing of multicrystalline silicon solar cells  

Science Journals Connector (OSTI)

Multicrystalline silicon is the most used material for the production of silicon solar cells. The quality of the as grown material depends on the quality of the feedstock and the crystallization process. Bulk ...

Dietmar Borchert; Markus Rinio

2009-01-01T23:59:59.000Z

173

Ninth workshop on crystalline silicon solar cell materials and processes: Summary discussion sessions  

SciTech Connect (OSTI)

This report is a summary of the panel discussions included with the Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme for the workshop was ``R and D Challenges and Opportunities in Si Photovoltaics.'' This theme was chosen because it appropriately reflects a host of challenges that the growing production of Si photovoltaics will be facing in the new millennium. The anticipated challenges will arise in developing strategies for cost reduction, increased production, higher throughput per manufacturing line, new sources of low-cost Si, and the introduction of new manufacturing processes for cell production. At the same time, technologies based on CdTe and CIS will come on line posing new competition. With these challenges come new opportunities for Si PV to wean itself from the microelectronics industry, to embark on a more aggressive program in thin-film Si solar cells, and to try new approaches to process monitoring.

Sopori, B.; Tan, T.; Swanson, D.; Rosenblum, M.; Sinton, R.

1999-11-23T23:59:59.000Z

174

Solar Plus SA | Open Energy Information  

Open Energy Info (EERE)

Solar Plus SA Place: Lisbon, Portugal Sector: Solar Product: Plans to set up a 5.5MWyear thin-film silicon module factory in Aveiro, Portugal, using EPV Solar equipment, and plans...

175

AOS Solar Inc | Open Energy Information  

Open Energy Info (EERE)

AOS Solar Inc Jump to: navigation, search Name: AOS Solar Inc Product: Manufacturer of thin-film silicon-on-glass. References: AOS Solar Inc1 This article is a stub. You can help...

176

Silicon/Organic Heterojunction to Block Minority Carriers  

E-Print Network [OSTI]

silicon solar cells are typically fabricated on thin high-quality silicon wafers ( (Fig. 4.1(a)). Conventional silicon solar cells use diffused p/p+ back-surface fields to reduce (c) Figure 4.1: (a) Band Diagram of solar cell in which recombination at the metal contact dominates

177

Solar Energy Materials & Solar Cells 58 (1999) 199}208 The behaviour of Na implanted into Mo thin "lms  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 58 (1999) 199}208 The behaviour of Na implanted into Mo thin, As ngstro( m Solar Center, P.O. Box 534, SE-751 21 Uppsala, Sweden Department of Materials Science Mo thin "lms used as back contacts for Cu(In,Ga)Se solar cells. The samples were analysed

Rockett, Angus

178

E-Print Network 3.0 - amorphous silicon-based solar Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

University of Toledo Collection: Renewable Energy 3 21st European Photovoltaic Solar Energy Conference (2006) DEFECT DENSITY IN SILICON HETEROJUNCTIONS Summary: voltage, V , and...

179

Structural properties of Ge doped multicrystalline Silicon wafers and Solar cells.  

E-Print Network [OSTI]

?? The efficiency of multi crystalline silicon solar cells is around 17% but the theoretical limit is 33,7 %. Impurities and dislocations are the main (more)

Lilliestrle, Johan Carl ke

2012-01-01T23:59:59.000Z

180

E-Print Network 3.0 - amorphous-silicon solar cells Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

results for: amorphous-silicon solar cells Page: << < 1 2 3 4 5 > >> 1 Institute of Energy Conversion University of Delaware Summary: modules. Consulted for a research...

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Silicon Ink Technology Offers Path to Higher Efficiency Solar Cells at Lower Cost  

Office of Energy Efficiency and Renewable Energy (EERE)

EERE supported the development of the first liquid silicon on the market that offers a novel path to producing more efficient solar cells at lower cost.

182

And the Award Goes to... Silicon Ink Solar Technology Supported by  

Broader source: Energy.gov (indexed) [DOE]

And the Award Goes to... Silicon Ink Solar Technology Supported by And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator July 19, 2011 - 5:00pm Addthis Innovalight’s silicon ink technology | Photo courtesy of Innovalight Innovalight's silicon ink technology | Photo courtesy of Innovalight What does this mean for me? Pioneering startup Innovalight partnered with NREL to invent the first liquid silicon on the market. When paired with Innovalight's industrial screen printing process, this silicon ink technology offers a novel path to producing solar cells with higher conversion efficiencies at lower cost. A pair of presenters approach the microphone carrying a sealed envelope, a faint drum roll is heard, cameras zoom in on the anxious faces of the

183

And the Award Goes to... Silicon Ink Solar Technology Supported by  

Broader source: Energy.gov (indexed) [DOE]

And the Award Goes to... Silicon Ink Solar Technology Supported by And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator July 19, 2011 - 5:00pm Addthis Innovalight’s silicon ink technology | Photo courtesy of Innovalight Innovalight's silicon ink technology | Photo courtesy of Innovalight What does this mean for me? Pioneering startup Innovalight partnered with NREL to invent the first liquid silicon on the market. When paired with Innovalight's industrial screen printing process, this silicon ink technology offers a novel path to producing solar cells with higher conversion efficiencies at lower cost. A pair of presenters approach the microphone carrying a sealed envelope, a faint drum roll is heard, cameras zoom in on the anxious faces of the

184

Thin Si wafering(assisted stripping(EAS) process for Solar cell Applications  

Science Journals Connector (OSTI)

we proposed the electrodeposition of a Ni-P alloy, which induces high stress in the silicon substrate at room temperature. The induced stress enables lift-off of the thin film silicon...

Yoo, Bongyoung

185

Beyond Silicon: Cutting the Costs of Solar Power | U.S. DOE Office of Science (SC)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Beyond Silicon: Cutting the Costs of Solar Power Beyond Silicon: Cutting the Costs of Solar Power Stories of Discovery & Innovation Beyond Silicon: Cutting the Costs of Solar Power Enlarge Photo Courtesy of University of Illinois Mechanically flexible, high efficiency solar module that uses an interconnected array of microscale GaAs photovoltaic cells, grown in a multilayer stack on a wafer and then printed onto a sheet of plastic. Enlarge Photo 04.15.11 Beyond Silicon: Cutting the Costs of Solar Power New method of fabricating semiconductors from gallium arsenide promises more affordable solar power, improved semiconductor devices. The biggest single barrier to widespread adoption of solar power continues to be the cost of solar cells. University of Illinois materials scientists supported by the DOE Office of Science have scored a

186

Multiple EFG Silicon Ribbon Technology as the Basis for Manufacturing Low-Cost Terrestrial Solar Cells  

Science Journals Connector (OSTI)

The development of a technology for production of low-cost silicon sheet substrates for solar cells based on the EFG process has been...2) solar cells prepared from this 10 cm wide ribbon...

B. Mackintosh; J. P. Kalejs; C. T. Ho; F. V. Wald

1981-01-01T23:59:59.000Z

187

Trend Detection on Thin-Film Solar Cell Technology Using Cluster Analysis and Modified Data Crystallization  

Science Journals Connector (OSTI)

Thin-film solar cell, one of green energies, is growing ... . To detect the potential trends of this technology is essential for companies and relevant industries ... patterns, the potential trends of thin-film solar

Tzu-Fu Chiu; Chao-Fu Hong; Yu-Ting Chiu

2010-01-01T23:59:59.000Z

188

EE580 Solar Cells Todd J. Kaiser  

E-Print Network [OSTI]

7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 06 · Solar Cell Materials & Structures 1Montana State University: Solar Cells Lecture 6: Solar Cells Solar Cell Technologies · A) Crystalline Silicon · B) Thin Film · C) Group III-IV Cells 2Montana State University: Solar Cells Lecture 6: Solar

Kaiser, Todd J.

189

p Channel thin lm transistor and complementary metaloxidesilicon inverter made of microcrystalline silicon  

E-Print Network [OSTI]

p Channel thin ®lm transistor and complementary metal±oxide±silicon inverter made ®lm transistor (TFT) made of directly deposited microcrystalline silicon (lc-Si). The lc-Si channel°C. By integrating this p TFT on a single lc-Si ®lm with an n channel TFT, we fabricated

190

EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS  

E-Print Network [OSTI]

EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS Yun Seog Lee 1; * Corresponding author: buonassisi@mit.edu; ABSTRACT We investigate earth abundant materials for thin- film solar cuprous oxide (Cu2O) as a prototype candidate for investigation as an absorber layer in thin film solar

Ceder, Gerbrand

191

Metal-black scattering centers to enhance light harvesting by thin-film solar cells  

E-Print Network [OSTI]

Metal-black scattering centers to enhance light harvesting by thin-film solar cells Deep Panjwania as scattering centers to increase the effective optical thickness of thin-film solar cells. The particular type. Gold-black was deposited on commercial thin-film solar cells using a thermal evaporator in nitrogen

Peale, Robert E.

192

Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics  

E-Print Network [OSTI]

nanowire networks as window layers in thin film solar cells.window layer for fully solution-deposited thin filmITO) thin films by silver nanowire composite window layers

Chung, Choong-Heui

2012-01-01T23:59:59.000Z

193

Focused ion beam specimen preparation for electron holography of electrically biased thin film solar cells  

E-Print Network [OSTI]

, biased TEM specimen, thin film solar cell, FIB Thin films of hydrogenated Si (Si:H) can be used as active for electron holography of a thin film solar cell using conventional lift-out specimen preparation and a homeFocused ion beam specimen preparation for electron holography of electrically biased thin film

Dunin-Borkowski, Rafal E.

194

High efficiency silicon nanohole/organic heterojunction hybrid solar cell  

SciTech Connect (OSTI)

High efficiency hybrid solar cells are fabricated based on silicon with a nanohole (SiNH) structure and poly (3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). The SiNH structure is fabricated using electroless chemical etching with silver catalyst, and the heterojunction is formed by spin coating of PEDOT on the SiNH. The hybrid cells are optimized by varying the hole depth, and a maximum power conversion efficiency of 8.3% is achieved with a hole depth of 1??m. The SiNH hybrid solar cell exhibits a strong antireflection and light trapping property attributed to the sub-wavelength dimension of the SiNH structure.

Hong, Lei [Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Singapore Institute of Manufacturing Technology, A-STAR (Agency for Science, Technology and Research), 71 Nanyang Drive, Singapore 638075 (Singapore); Wang, Xincai; Zheng, Hongyu [Singapore Institute of Manufacturing Technology, A-STAR (Agency for Science, Technology and Research), 71 Nanyang Drive, Singapore 638075 (Singapore); He, Lining; Wang, Hao; Rusli, E-mail: yu.hy@sustc.edu.cn, E-mail: erusli@ntu.edu.sg [Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Yu, Hongyu, E-mail: yu.hy@sustc.edu.cn, E-mail: erusli@ntu.edu.sg [South University of Science and Technology of China, Shenzhen (China)

2014-02-03T23:59:59.000Z

195

Electroabsorption measurements and built-in potentials in amorphous silicon pin solar cells  

E-Print Network [OSTI]

and the capacitance of such devices. We apply this technique to hydrogenated amorphous silicon a-Si:H -based solar-6951 96 04246-5 The internal electric fields of amporphous silicon a- Si:H -based p­i­n solar cells on electroluminescent organic heterostructure diodes . We con- firmed this interpretation by studying a-Si:H n

Schiff, Eric A.

196

Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demsy and Sajeev John  

E-Print Network [OSTI]

Solar energy trapping with modulated silicon nanowire photonic crystals Guillaume Demésy and Sajeev by the American Institute of Physics. Related Articles Solar power conversion efficiency in modulated silicon utilizing multiple carrier generation via singlet exciton fission Appl. Phys. Lett. 101, 153507 (2012) Light

John, Sajeev

197

Solar power conversion efficiency in modulated silicon nanowire photonic Alexei Deinega and Sajeev John  

E-Print Network [OSTI]

Solar power conversion efficiency in modulated silicon nanowire photonic crystals Alexei Deinega by the American Institute of Physics. Related Articles Solar energy trapping with modulated silicon nanowire multiple carrier generation via singlet exciton fission Appl. Phys. Lett. 101, 153507 (2012) Light trapping

John, Sajeev

198

Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic crystals  

E-Print Network [OSTI]

Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic://jap.aip.org/authors #12;Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic, 60 St. George Street, Toronto, Ontario M5S 1A7, Canada (Received 25 March 2013; accepted 27 May 2013

John, Sajeev

199

One-sun, single-crystalline silicon solar cell research  

SciTech Connect (OSTI)

The point-contact solar cell design, the most efficient silicon concentrator solar cell design to date, is explored for use in one-sun applications. The necessary modifications to backside-contact concentrator cell design for operation at one-sun are explored and implemented. Large-area, point-contact solar cells were fabricated on n- and p-type substrates in low-level injection (LLI). The characteristics of these LLI cells were compared to those of four different architectures of cells with substrates in high-level injection (HLI). Both types of cell achieved open-circuit voltages over 700 mV at one-sun, LLI cells had higher fill factors, and HLI cells had substantially higher short-circuit currents. The mechanisms responsible for these observations are discussed. The high V{sub oc} and J{sub sc} of the HLI cells combine to make them more efficient than the LLI cells, with efficiencies measured at Sandia up to 22.7% for a 37.5-cm{sup 2} cell at one sun. This is the highest one-sun efficiency for a silicon cell larger than 4 cm{sup 2}. Simplified, backside-contact solar cell processes were also developed, which have nearly 100% yield. Over 80 such cells, each with a 35-cm{sup 2} area or greater, were delivered to Sandia. Cells made with these simplified processes had efficiencies up to 21.3% for a 37.5-cm{sup 2} cell. The recombination properties of Si{sub 3}N{sub 4} layers over SiO{sub 2} were characterized, since Si{sub 3}N{sub 4} is an excellent antireflection coating for cells laminated under glass. Several prototype flat-plate modules of backside-contact cells were built, with up to 24 cells and efficiencies up to 19%. 26 refs., 16 figs., 4 tabs.

King, R.R.; Sinton, R.A.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

1991-06-01T23:59:59.000Z

200

Bendable single crystal silicon thin film transistors formed by printing on plastic substrates  

E-Print Network [OSTI]

Bendable single crystal silicon thin film transistors formed by printing on plastic substrates E on plastic substrates using an efficient dry transfer printing technique. In these devices, free standing-Si is then transferred, to a specific location and with a controlled orientation, onto a thin plastic sheet

Rogers, John A.

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Light trapping in thin-film solar cells measured by Raman spectroscopy  

SciTech Connect (OSTI)

In this study, Raman spectroscopy is used as a tool to determine the light-trapping capability of textured ZnO front electrodes implemented in microcrystalline silicon (?c-Si:H) solar cells. Microcrystalline silicon films deposited on superstrates of various roughnesses are characterized by Raman micro-spectroscopy at excitation wavelengths of 442?nm, 514?nm, 633?nm, and 785?nm, respectively. The way to measure quantitatively and with a high level of reproducibility the Raman intensity is described in details. By varying the superstrate texture and with it the light trapping in the ?c-Si:H absorber layer, we find significant differences in the absolute Raman intensity measured in the near infrared wavelength region (where light trapping is relevant). A good agreement between the absolute Raman intensity and the external quantum efficiency of the ?c-Si:H solar cells is obtained, demonstrating the validity of the introduced method. Applications to thin-film solar cells, in general, and other optoelectronic devices are discussed.

Ledinsk, M., E-mail: ledinsky@fzu.cz [Laboratory of Nanostructures and Nanomaterials, Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Cukrovarnick 10, 162 00 Prague (Czech Republic); Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), cole Polytechnique Fdrale de Lausanne (EPFL), Rue de la Maladire 71b, CH-2000 Neuchtel (Switzerland); Moulin, E.; Bugnon, G.; Meillaud, F.; Ballif, C. [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), cole Polytechnique Fdrale de Lausanne (EPFL), Rue de la Maladire 71b, CH-2000 Neuchtel (Switzerland); Ganzerov, K.; Vetushka, A.; Fejfar, A. [Laboratory of Nanostructures and Nanomaterials, Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Cukrovarnick 10, 162 00 Prague (Czech Republic)

2014-09-15T23:59:59.000Z

202

Processes for producing low cost, high efficiency silicon solar cells  

DOE Patents [OSTI]

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime {tau} and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime {tau} and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO{sub x}. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure. 28 figs.

Rohatgi, A.; Doshi, P.; Tate, J.K.; Mejia, J.; Chen, Z.

1998-06-16T23:59:59.000Z

203

Silicon-integrated thin-film structure for electro-optic applications  

DOE Patents [OSTI]

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

McKee, Rodney A. (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

204

The origin of white luminescence from silicon oxycarbide thin films  

SciTech Connect (OSTI)

Silicon oxycarbide (SiC{sub x}O{sub y}) is a promising material for achieving strong room-temperature white luminescence. The present work investigated the mechanisms for light emission in the visible/ultraviolet range (1.54.0?eV) from chemical vapor deposited amorphous SiC{sub x}O{sub y} thin films, using a combination of optical characterizations and electron paramagnetic resonance (EPR) measurements. Photoluminescence (PL) and EPR studies of samples, with and without post-deposition passivation in an oxygen and forming gas (H{sub 2} 5 at.?% and N{sub 2} 95 at.?%) ambient, ruled out typical structural defects in oxides, e.g., Si-related neutral oxygen vacancies or non-bridging oxygen hole centers, as the dominant mechanism for white luminescence from SiC{sub x}O{sub y}. The observed intense white luminescence (red, green, and blue emission) is believed to arise from the generation of photo-carriers by optical absorption through C-Si-O related electronic transitions, and the recombination of such carriers between bands and/or at band tail states. This assertion is based on the realization that the PL intensity dramatically increased at an excitation energy coinciding with the E{sub 04} band gaps of the material, as well as by the observed correlation between the Si-O-C bond density and the PL intensity. An additional mechanism for the existence of a blue component of the white emission is also discussed.

Nikas, V.; Gallis, S., E-mail: sgalis@us.ibm.com; Huang, M.; Kaloyeros, A. E. [College of Nanoscale Sciences and Engineering, State University of New York, Albany, New York 12203 (United States); Nguyen, A. P. D.; Stesmans, A.; Afanas'ev, V. V. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium)

2014-02-10T23:59:59.000Z

205

Thin, High Lifetime Silicon Wafers with No Sawing; Re-crystallization in a Thin Film Capsule  

SciTech Connect (OSTI)

The project fits within the area of renewable energy called photovoltaics (PV), or the generation of electricity directly from sunlight using semiconductor devices. PV has the greatest potential of any renewable energy technology. The vast majority of photovoltaic modules are made on crystalline silicon wafers and these wafers accounts for the largest fraction of the cost of a photovoltaic module. Thus, a method of making high quality, low cost wafers would be extremely beneficial to the PV industry The industry standard technology creates wafers by casting an ingot and then sawing wafers from the ingot. Sawing rendered half of the highly refined silicon feedstock as un-reclaimable dust. Being a brittle material, the sawing is actually a type of grinding operation which is costly both in terms of capital equipment and in terms of consumables costs. The consumables costs associated with the wire sawing technology are particularly burdensome and include the cost of the wire itself (continuously fed, one time use), the abrasive particles, and, waste disposal. The goal of this project was to make wafers directly from molten silicon with no sawing required. The fundamental concept was to create a very low cost (but low quality) wafer of the desired shape and size and then to improve the quality of the wafer by a specialized thermal treatment (called re-crystallization). Others have attempted to create silicon sheet by recrystallization with varying degrees of success. Key among the difficulties encountered by others were: a) difficulty in maintaining the physical shape of the sheet during the recrystallization process and b) difficulty in maintaining the cleanliness of the sheet during recrystallization. Our method solved both of these challenges by encapsulating the preform wafer in a protective capsule prior to recrystallization (see below). The recrystallization method developed in this work was extremely effective at maintaining the shape and the cleanliness of the wafer. In addition, it was found to be suitable for growing very large crystals. The equipment used was simple and inexpensive to operate. Reasonable solar cells were fabricated on re-crystallized material.

Emanuel Sachs

2013-01-16T23:59:59.000Z

206

Structure of All-Polymer Solar Cells Impedes Efficiency  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

thin films of semiconducting polymers as a possible alternative to silicon-based solar cells. Such devices would have the advantages of being cheap to produce,...

207

Thin film solar cell including a spatially modulated intrinsic layer  

DOE Patents [OSTI]

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

1989-03-28T23:59:59.000Z

208

15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers  

SciTech Connect (OSTI)

The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

Sopori, B. L.

2005-11-01T23:59:59.000Z

209

16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers  

SciTech Connect (OSTI)

The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

Sopori, B. L.

2006-08-01T23:59:59.000Z

210

Recrystallization of amorphous silicon deposited on ultra thin microcrystalline silicon layers  

SciTech Connect (OSTI)

This study reports on a method to reduce the thermal crystallization time and temperature of amorphous silicon films by initially depositing an ultra thin {micro}c-Si:H seed layer. After rapid thermal annealing (RTA), films were characterized by means of Raman spectroscopy, x-ray diffraction, reflection high energy electron diffraction, atomic force microscopy, and dark and photocurrent. The results show that the microcrystalline particles in the seed layer act as nucleation centers, promoting crystallization of a-Si:H at lower temperatures and at shorter times, compared to a-Si:H films deposited without any seed layer. Additionally, it was found that the seed layer affects the orientation of the crystallized films. The dark current increases abruptly over 4 orders of magnitude in the first 15 second anneal, then decreases as the time increases, and tends to saturate. The photocurrent has an opposite behavior. These transport results can be understood in terms of a change in defect density and band gap shrinkage.

Wang, F.; Wolfe, D.; Lucovsky, G.

1997-07-01T23:59:59.000Z

211

Exciton splitting and carrier transport across the amorphous-silicon/ polymer solar cell interface  

E-Print Network [OSTI]

of bilayer hybrid solar cells to better understand the physics controlling organic-inorganic device of Physics. DOI: 10.1063/1.2408641 Hybrid organic-inorganic solar cells combine the pro- cessabilityExciton splitting and carrier transport across the amorphous-silicon/ polymer solar cell interface

McGehee, Michael

212

21.9% efficient silicon bifacial solar cells  

SciTech Connect (OSTI)

This paper reports the efficiency of bifacial silicon solar cells and mini-modules fabricated at SunPower Corp. The best cell has AM1.5G front efficiency of 21.9% and rear efficiency of 13.9%. The mini-modules, each containing 20 bifacial cells, attain efficiency as high as the average efficiency of their individual cells. The best module has AM1.5G front efficiency of 20.66% and rear efficiency of 10.54%. Optical properties of the bifacial cells have also been measured and analyzed. The results show that bifacial cells, compared to monofacial cells, absorb less infrared light and thus they can operate at lower temperature in space.

Zhou, C.Z.; Verlinden, P.J.; Crane, R.A.; Swanson, R.M. [SunPower Corp., Sunnyvale, CA (United States); Sinton, R.A. [Sinton Consulting, San Jose, CA (United States)

1997-12-31T23:59:59.000Z

213

LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle  

E-Print Network [OSTI]

LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle Physics response map, was developed and used to map defects in thin-film solar cells [4]. Improvements to the two) measurements are providing a direct link between the spatial non-uniformities inherent in thin-film

Sites, James R.

214

Dielectric back scattering patterns for light trapping in thin-film Si solar cells  

E-Print Network [OSTI]

Dielectric back scattering patterns for light trapping in thin-film Si solar cells M. van Lare,1 of dielectric and metallic backscattering patterns in thin-film a-Si:H solar cells. We compare devices. Zhu, C.-M. Hsu, Z. Yu, S. Fan, and Y. Cui, "Nanodome solar cells with efficient light management

Polman, Albert

215

Solar-to-Hydrogen Photovoltaic/Photoelectrochemical Devices Using Amorphous Silicon Carbide as the Photoelectrode  

SciTech Connect (OSTI)

We report the use of hydrogenated amorphous silicon carbide (a-SiC:H) prepared by plasma enhanced chemical vapor deposition (PECVD) as the photoelectrode in an integrated 'hybrid' photoelectrochemical (PEC) cell to produce hydrogen directly from water using sunlight. Results on the durability of hydrogenated amorphous silicon carbide (a-SiC:H) photoelectrodes in an electrolyte are presented. In a pH2 electrolyte, the a-SiC:H photoelectrode exhibits excellent stability for 100 hour test so far performed. A photocurrent onset shift (anodically) after a 24- or 100-hour durability test in electrolyte is observed, likely due to changes in the surface chemical structure of the a-SiC:H photoelectrode. It is also observed that a thin SiOx layer native to the air exposed surface of the a-SiC:H affects the photocurrent and the its onset shift. Finally, approaches for eliminating the external bias voltage and enhancing the solar-to-hydrogen efficiency in a PV/PEC hybrid structure to achieve {>=} 10% are presented.

Hu, J.; Zhu, F.; Matulionis, I.; Kunrath, A.; Deutsch, T.; Kuritzky, L.; Miller, E.; Madan, A.

2008-01-01T23:59:59.000Z

216

Solar Grade Silicon from Agricultural By-products  

SciTech Connect (OSTI)

In this project, Mayaterials developed a low cost, low energy and low temperature method of purifying rice hull ash to high purity (5-6Ns) and converting it by carbothermal reduction to solar grade quality silicon (Sipv) using a self-designed and built electric arc furnace (EAF). Outside evaluation of our process by an independent engineering firm confirms that our technology greatly lowers estimated operating expenses (OPEX) to $5/kg and capital expenses (CAPEX) to $24/kg for Sipv production, which is well below best-in-class plants using a Siemens process approach (OPEX of 14/kg and CAPEX of $87/kg, respectively). The primary limiting factor in the widespread use of photovoltaic (PV) cells is the high cost of manufacturing, compared to more traditional sources to reach 6 g Sipv/watt (with averages closer to 8+g/watt). In 2008, the spot price of Sipv rose to $450/kg. While prices have since dropped to a more reasonable $25/kg; this low price level is not sustainable, meaning the longer-term price will likely return to $35/kg. The 6-8 g Si/watt implies that the Sipv used in a module will cost $0.21-0.28/watt for the best producers (45% of the cost of a traditional solar panel), a major improvement from the cost/wafer driven by the $50/kg Si costs of early 2011, but still a major hindrance in fulfilling DOE goal of lowering the cost of solar energy below $1/watt. The solar cell industry has grown by 40% yearly for the past eight years, increasing the demand for Sipv. As such, future solar silicon price spikes are expected in the next few years. Although industry has invested billions of dollars to meet this ever-increasing demand, the technology to produce Sipv remains largely unchanged requiring the energy intensive, and chlorine dependent Siemens process or variations thereof. While huge improvements have been made, current state-of-the-art industrial plant still use 65 kWh/kg of silicon purified. Our technology offers a key distinction to other technologies as it starts one step upstream from all other Sipv production efforts. Our process starts by producing high purity SiO2/C feedstocks from which Sipv can be produced in a single, chlorine free, final EAF step. Specifically, our unique technology, and the resultant SiO2/C product can serve as high purity feedstocks to existing metallurgical silicon (Simet) producers, allowing them to generate Sipv with existing US manufacturing infrastructure, reducing the overall capital and commissioning schedule. Our low energy, low CAPEX and OPEX process purifies the silica and carbon present in rice hull ash (RHA) at low temperatures (< 200C) to produce high purity (5-6 Ns) feedstock for production of Sipv using furnaces similar to those used to produce Simet. During the course of this project we partnered with Wadham Energy LP (Wadham), who burns 220k ton of rice hulls (RH)/yr generating 200 GWh of electricity/yr and >30k ton/yr RHA. The power generation step produces much more energy (42 kWh/kg of final silicon produced) than required to purify the RHA (5 kWh/kg of Sipv, compared to 65 kWh/kg noted above. Biogenic silica offers three very important foundations for producing high purity silicon. First, wastes from silica accumulating plants, such as rice, corn, many grasses, algae and grains, contain very reactive, amorphous silica from which impurities are easily removed. Second, plants take up only a limited set of, and minimal quantities of the heavy metals present in nature, meaning fewer minerals must be removed. Third, biomass combustion generates a product with intrinsic residual carbon, mixed at nanometer length scales with the SiO2. RHA is 80-90 wt% high surface area (20 m2/g), amorphous SiO2 with some simple mineral content mixed intimately with 5-15 wt% carbon. The mineral content is easily removed by low cost, acid washes using Mayaterials IP, leading to purified rice hull ash (RHAclean) at up to 6N purity. This highly reactive silica is partially extracted from RHAclean at 200 C in an environmentally benign process to adjust SiO2:C ratios to those needed in EA

Richard M. Laine

2012-08-20T23:59:59.000Z

217

Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange  

SciTech Connect (OSTI)

Intentional boron and phosphorus doping of polycrystalline silicon thin films on glass prepared by the silver-induced layer exchange is presented. A silver/(titanium) oxide/amorphous silicon stack is annealed at temperatures below the eutectic temperature of the Ag/Si system, leading to a complete layer exchange and simultaneous crystallization of the amorphous silicon. Intentional doping of the amorphous silicon prior to the exchange process results in boron- or phosphorus-doped polycrystalline silicon. Hall effect measurements show carrier concentrations between 2 Multiplication-Sign 10{sup 17} cm{sup -3} and 3 Multiplication-Sign 10{sup 20} cm{sup -3} for phosphorus and 4 Multiplication-Sign 10{sup 18} cm{sup -3} to 3 Multiplication-Sign 10{sup 19} cm{sup -3} for boron-doped layers, with carrier mobilities up to 90 cm{sup 2}/V s.

Antesberger, T.; Wassner, T. A.; Jaeger, C.; Algasinger, M.; Kashani, M.; Scholz, M.; Matich, S.; Stutzmann, M. [Walter Schottky Institut and Physics Department, Technische Universitaet Muenchen, Am Coulombwall 4, 85748 Garching (Germany)] [Walter Schottky Institut and Physics Department, Technische Universitaet Muenchen, Am Coulombwall 4, 85748 Garching (Germany)

2013-05-27T23:59:59.000Z

218

Spin Coated Plasmonic Nanoparticle Interfaces for Photocurrent Enhancement in Thin Film Si Solar Cells  

E-Print Network [OSTI]

Nanoparticle (NP) arrays of noble metals strongly absorb light in the visible to infrared wavelengths through resonant interactions between the incident electromagnetic field and the metal's free electron plasma. Such plasmonic interfaces enhance light absorption and photocurrent in solar cells. We report a cost effective and scalable room temperature/pressure spin-coating route to fabricate broadband plasmonic interfaces consisting of silver NPs. The NP interface yields photocurrent enhancement (PE) in thin film silicon devices by up to 200% which is significantly greater than previously reported values. For coatings produced from Ag nanoink containing particles with average diameter of 40 nm, an optimal NP surface coverage of 7% was observed. Scanning electron microscopy of interface morphologies revealed that for low surface coverage, particles are well-separated, resulting in broadband PE. At higher surface coverage, formation of particle strings and clusters caused red-shifting of the PE peak and a narro...

Israelowitz, Miriam; Cong, Tao; Sureshkumar, Radhakrishna

2013-01-01T23:59:59.000Z

219

Two-Dimensional Numerical Simulations of High Efficiency Silicon Solar Cells  

Science Journals Connector (OSTI)

This paper presents for the first time the use of two-dimensional (2D) device simulation for optimising design parameters of high-efficiency silicon solar cells of practical dimensions. We examine the...

G. Heiser; A. G. Aberle; S. R. Wenham

1993-01-01T23:59:59.000Z

220

Effect of liquid dielectrics on the efficiency of silicon solar cells  

Science Journals Connector (OSTI)

The results of experimental studies of the change in the photoelectric characteristics of silicon solar cells produced as a result of depositing ... open-circuit voltage, and significantly increases the efficiency

Yu. A. Abramyan; G. G. Karamyan; A. A. Murodyan; V. I. Stafeev

1999-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Co-optimizing silicon solar cell processing for efficiency and throughput  

E-Print Network [OSTI]

Crystalline silicon solar cells are a proven renewable energy technology, but they have yet to reach low costs commensurate with subsidy-free, grid-scale adoption. To achieve the widespread adoption of photovoltaics, the ...

Morishige, Ashley E. (Ashley Elizabeth)

2013-01-01T23:59:59.000Z

222

Optical losses in amorphous silicon solar cells due to back reflectors  

SciTech Connect (OSTI)

The authors have used a new numerical model and here present initial results on how texturing and backreflectors affect the maximum achievable short-circuit current densities in amorphous silicon solar cells.

Sopori, B.L.; Madjdpour, J.; Von Roedern, B.; Chen, W.; Hegedus, S.S.

1997-07-01T23:59:59.000Z

223

Technology and Design of Classical and Heterojunction Back Contacted Silicon Solar Cells  

Science Journals Connector (OSTI)

Ever since the first proposal of Interdigitated Back Contact (IBC) silicon solar cells in 1975, this type of cell has been under development as a means to reach high energy conversion efficiencies. Since no me...

Niels E. Posthuma; Barry J. OSullivan

2012-01-01T23:59:59.000Z

224

P+N N+ and Pin Low Cost Silicon Solar Cell Technology  

Science Journals Connector (OSTI)

The results of a study which has as its main goal the fabrication of silicon solar cell panels using only the most simple techniques is presented. Spin-on diffusion sources were used to form the junctions, whi...

O. Leistiko; Y. Safir; W. G. Proctor

1987-01-01T23:59:59.000Z

225

Cost-Effective Porous Silicon Technology For Solar Cell Industrial Applications  

Science Journals Connector (OSTI)

For porous silicon (PS) layer preparation, only the electrochemical method of DC- anodizing in HF-based electrolytes and the chemical method using HF/HNO3 electrolytes are widely used. In solar cell applications,...

V. Yerokhov; M. Lipinski; A. Mylyanych

2002-01-01T23:59:59.000Z

226

In situ measurements of stress evolution in silicon thin films during  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

In situ measurements of stress evolution in silicon thin films during In situ measurements of stress evolution in silicon thin films during electrochemical lithiation and delithiation Title In situ measurements of stress evolution in silicon thin films during electrochemical lithiation and delithiation Publication Type Journal Article Year of Publication 2010 Authors Sethuraman, Vijay A., Michael J. Chon, Maxwell Shimshak, Venkat Srinivasan, and Pradeep R. Guduru Journal Journal of Power Sources Volume 195 Start Page 5062 Issue 15 Pagination 5062-5066 Date Published 08/2010 Keywords In situ stress measurement, Lithium-ion battery, Mechanical dissipation, Multi-beam optical sensor (MOS), Open-circuit relaxation, Silicon anode Abstract We report in situ measurements of stress evolution in a silicon thin-film electrode during electrochemical lithiation and delithiation by using the multi-beam optical sensor (MOS) technique. Upon lithiation, due to substrate constraint, the silicon electrode initially undergoes elastic deformation, resulting in rapid rise of compressive stress. The electrode begins to deform plastically at a compressive stress of ca. -1.75 GPa; subsequent lithiation results in continued plastic strain, dissipating mechanical energy. Upon delithiation, the electrode first undergoes elastic straining in the opposite direction, leading to a tensile stress of ca. 1 GPa; subsequently, it deforms plastically during the rest of delithiation. The plastic flow stress evolves continuously with lithium concentration. Thus, mechanical energy is dissipated in plastic deformation during both lithiation and delithiation, and it can be calculated from the stress measurements; we show that it is comparable to the polarization loss. Upon current interruption, both the film stress and the electrode potential relax with similar time constants, suggesting that stress contributes significantly to the chemical potential of lithiated silicon.

227

Solar Thin Films Inc formerly American United Global Inc | Open Energy  

Open Energy Info (EERE)

Films Inc formerly American United Global Inc Films Inc formerly American United Global Inc Jump to: navigation, search Name Solar Thin Films Inc (formerly American United Global Inc) Place New York, New York Zip 10038 Sector Solar Product A US-based solar manufacturing equipment supplier. References Solar Thin Films Inc (formerly American United Global Inc)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Thin Films Inc (formerly American United Global Inc) is a company located in New York, New York . References ↑ "Solar Thin Films Inc (formerly American United Global Inc)" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Thin_Films_Inc_formerly_American_United_Global_Inc&oldid=351338

228

Silicon Solar Cells with Front Hetero-Contact and Aluminum Alloy Back Junction: Preprint  

SciTech Connect (OSTI)

We prototype an alternative n-type monocrystalline silicon (c-Si) solar cell structure that utilizes an n/i-type hydrogenated amorphous silicon (a-Si:H) front hetero-contact and a back p-n junction formed by alloying aluminum (Al) with the n-type Si wafer.

Yuan, H.-C.; Page, M. R.; Iwaniczko, E.; Xu, Y.; Roybal, L.; Wang, Q.; Branz, H. M.; Meier, D. L.

2008-05-01T23:59:59.000Z

229

Present Status and Future Prospects of Silicon Solar Cell Arrays and Systems  

Science Journals Connector (OSTI)

...research-article Present Status and Future Prospects of Silicon Solar Cell Arrays and Systems H. Durand The first part of this paper...present state of the art of the single crystal silicon cell industry: production volume, cost breakdown and main...

1980-01-01T23:59:59.000Z

230

Technological assessment of light-trapping technology for thin-film Si solar cell.  

E-Print Network [OSTI]

??The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was (more)

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

231

Using Localized Plasmon Resonances to Enhance Absorption Efficiency in Thin-film Organic Solar Cells  

Science Journals Connector (OSTI)

We propose the use of localized surface plasmon modes excited by square metallic gratings to enhance the optical absorption of thin-film organic solar cells. Broadband absorption...

Le, Khai Q; Abass, Aimi; Maes, Bjorn; Bienstman, Peter; Alu, Andrea

232

Impurity and back contact effects on CdTe/CdS thin film solar cells.  

E-Print Network [OSTI]

??CdTe/CdS thin film solar cells are the most promising cost-effective solar cells. The goal of this project is to improve the performance for CdS/CdTe devices (more)

Zhao, Hehong

2008-01-01T23:59:59.000Z

233

Photovoltaics, solar energy materials & thin films-IMRC 2006, Cancun, Mexico: Selected papers  

Science Journals Connector (OSTI)

The International symposium Photovoltaics, Solar Energy Materials & Thin Films was held in Cancun, Mexico from 20 to 24 August 2006. More...2 solar cells; and material characterization. A good...2 and the devic...

Xavier Mathew

2007-11-01T23:59:59.000Z

234

Highly Ordered Vertical Silicon Nanowire Array Composite Thin Films for Thermoelectric Devices  

E-Print Network [OSTI]

Highly Ordered Vertical Silicon Nanowire Array Composite Thin Films for Thermoelectric Devices for thermoelectric devices are presented. Inter- ference lithography was used to pattern square lattice photoresist. The Si NW arrays were embedded in SOG to form a dense and robust composite material for device

Bowers, John

235

Overview and Challenges of Thin Film Solar Electric Technologies  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and Challenges of Thin and Challenges of Thin Film Solar Electric Technologies H.S. Ullal Presented at the World Renewable Energy Congress X and Exhibition 2008 Glasgow, Scotland, United Kingdom July 19-25, 2008 Conference Paper NREL/CP-520-43355 December 2008 NOTICE The submitted manuscript has been offered by an employee of the Alliance for Sustainable Energy, LLC (ASE), a contractor of the US Government under Contract No. DE-AC36-08-GO28308. Accordingly, the US Government and ASE retain a nonexclusive royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for US Government purposes. This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any

236

PROCEEDINGS O F THE IEEE, VOL.56, NO. 1, JANUARY196837 [`I J. J. Wysocki,"Lithium-doped radiation-resistant silicon solar  

E-Print Network [OSTI]

,"Lithium-doped radiation-resistant silicon solar cells," IEEE Trans. Nuclear Science. vol.NS-13, pp. 168-173, December 1966 damagein semiconductorsXI1: Effects ofhighenergy electrons in silicon and silicon solar cells," Contract NAS 5-3805, May 25, 1966. 14] R. V. Tauke, "Thermal annealing of irradiated n-on-p silicon solar cells

Teich, Malvin C.

237

CARRIER COLLECTION IN THIN-FILM CDTE SOLAR CELLS: THEORY AND EXPERIMENT  

E-Print Network [OSTI]

-n junction solar cell theory predicts that the total solar cell current in the light, JLCARRIER COLLECTION IN THIN-FILM CDTE SOLAR CELLS: THEORY AND EXPERIMENT A.E. Delahoy, Z. Cheng and K.K. Chin Department of Physics, Apollo Solar Energy Research Center, New Jersey Institute

238

1. INTRODUCTION Polycrystalline CdTe thin films solar cells have shown long  

E-Print Network [OSTI]

to the solar panel that can be adapted to any kind of shape and is easy to deploy in space. We have developed1. INTRODUCTION Polycrystalline CdTe thin films solar cells have shown long term stable performance for the solar cell, therefore high specific power (ratio of out- put power to the weight) solar cells

Romeo, Alessandro

239

(Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor-and solar-  

E-Print Network [OSTI]

Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor- and solar- grade and aluminum alloys and the chemical industry. The semiconductor and solar industries, which manufacture chips%; Venezuela, 15%; Canada, 8%; and other, 8%. Silicon metal: Brazil, 38%; South Africa, 24%; Canada, 16

240

See-through amorphous silicon solar cells with selectively transparent and conducting photonic crystal back reflectors for building integrated photovoltaics  

SciTech Connect (OSTI)

Thin semi-transparent hydrogenated amorphous silicon (a-Si:H) solar cells with selectively transparent and conducting photonic crystal (STCPC) back-reflectors are demonstrated. Short circuit current density of a 135?nm thick a-Si:H cell with a given STCPC back-reflector is enhanced by as much as 23% in comparison to a reference cell with an ITO film functioning as its rear contact. Concurrently, solar irradiance of 295?W/m{sup 2} and illuminance of 3480 lux are transmitted through the cell with a given STCPC back reflector under AM1.5 Global tilt illumination, indicating its utility as a source of space heating and lighting, respectively, in building integrated photovoltaic applications.

Yang, Yang [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada)] [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada); OBrien, Paul G. [Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada) [Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada); Materials Chemistry Research Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6 (Canada); Ozin, Geoffrey A., E-mail: gozin@chem.utoronto.ca, E-mail: kherani@ecf.utoronto.ca [Materials Chemistry Research Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6 (Canada); Kherani, Nazir P., E-mail: gozin@chem.utoronto.ca, E-mail: kherani@ecf.utoronto.ca [The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Room GB254B, Toronto, Ontario M5S 3G4 (Canada); Department of Materials Science and Engineering, University of Toronto, 184 College Street, Room 140, Toronto, Ontario M5S 3E4 (Canada)

2013-11-25T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

SciTech Connect (OSTI)

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

242

Array automated assembly task for the Low-Cost Silicon Solar Array Project, Phase 2. Sixth quarterly report  

SciTech Connect (OSTI)

This program is concerned with nickel/solder metallization of silicon solar cells. Work in this second quarter of the program extension comprised portions of four experimental tasks. The task to study nickel plating on silicon oxide films has led to the finding that the plating solution dissolves oxide before depositing nickel. The electron microprobe study of nickel penetration of silicon has shown that sintering can be conducted for long times at 300/sup 0/C but that problems may arise above this temperature, even though there is no significant penetration of nickel into silicon below about 450/sup 0/C. Measurements on cells fabricated using plating times in the four to fourteen minute range indicate no degradation of cell properties as a result of contact with the plating solution in this time range, but do show evidence of poor contact quality if the nickel plate is either too thick or too thin. The task to assess the Motorola plating process is in its early stages, but it is evident that the process is a very complex and time consuming one.

Petersen, R.C.

1980-04-01T23:59:59.000Z

243

E-Print Network 3.0 - analyzing solar reflective Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Market Studies Collection: Power Transmission, Distribution and Plants 3 SIMULATION OF LIGHT IN-COUPLING AT OBLIQUE ANGLES IN THIN-FILM SILICON SOLAR CELLS Summary: roughness in...

244

Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor  

E-Print Network [OSTI]

The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

Nominanda, Helinda

2012-06-07T23:59:59.000Z

245

Optimization-based design of surface textures for thin-film Si solar cells  

E-Print Network [OSTI]

We numerically investigate the light-absorption behavior of thin-film silicon for normal-incident light, using surface textures to enhance absorption. We consider a variety of texture designs, such as simple periodic ...

Sheng, Xing

246

Mapping boron in silicon solar cells using electron energy-loss spectroscopy  

E-Print Network [OSTI]

Mapping boron in silicon solar cells using electron energy-loss spectroscopy M Duchamp1 , C B of Denmark, DK-2800 Kongens Lyngby, Denmark 2 Centro Atómico Bariloche, AR-8400 S. C. de Bariloche, Argentina 3 ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten, The Netherlands 4 CEA-Leti, MINATEC Campus, 17

Dunin-Borkowski, Rafal E.

247

Nanoscale photon management in silicon solar cells Sangmoo Jeong, Shuang Wang, and Yi Cui  

E-Print Network [OSTI]

benefits. For power generation, low-cost fossil fuel has, however, been pre- ferred to renewable energy and wind, can be accessed easily in most of the world. In particular, the solar energy deliveredNanoscale photon management in silicon solar cells Sangmoo Jeong, Shuang Wang, and Yi Cui Citation

Cui, Yi

248

Atomic Structure of Interface States in Silicon Heterojunction Solar Cells B. M. George,1  

E-Print Network [OSTI]

silicon (a-Si:H=c-Si) heterojunction solar cells. We find that (i) the interface exhibits microscopic identify the microscopic origin of the conduction band tail state in the a-Si:H layer, and (iv) present-efficiency solar cells, is formed at the a-Si: H=c-Si interface [8]. Here, similar to other crystalline- amorphous

Schmidt, Wolf Gero

249

Supporting Information Absorption of Light in a Single-Nanowire Silicon Solar  

E-Print Network [OSTI]

1 Supporting Information Absorption of Light in a Single-Nanowire Silicon Solar Cell Decorated_yang@berkeley.edu. #12;2 Fabrication of the suspended single-nanowire solar cells Trench substrates were fabricated from of a quartz tube in a tube furnace. Reactions to grow wires bridging the trenches lasted from 15 to 45 mins

Yang, Peidong

250

Polyx multicrystalline silicon solar cells processed by PF+5 unanalysed ion implantation and rapid thermal annealing  

E-Print Network [OSTI]

of terrestrial solar cells as compared to classical furnace or pulsed laser annealing. Unfortunately, drawbacks695 Polyx multicrystalline silicon solar cells processed by PF+5 unanalysed ion implantation with classical furnace annealing or with classical diffusion process. Revue Phys. Appl. 22 (1987) 695-700 JUILLET

Paris-Sud XI, Université de

251

Core-shell silicon nanowire solar cells M. M. Adachi1,2  

E-Print Network [OSTI]

Core-shell silicon nanowire solar cells M. M. Adachi1,2 , M. P. Anantram3 & K. S. Karim1,2 1 of Waterloo, Waterloo, Ontario N2L 3G1, Canada, 3 Department of Electrical Engineering, University and reduce radial carrier collection distances in solar cell devices. Arrays of disordered nanowires grown

Anantram, M. P.

252

Silicon heterojunction solar cell with passivated hole selective MoO{sub x} contact  

SciTech Connect (OSTI)

We explore substoichiometric molybdenum trioxide (MoO{sub x}, x?silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711?mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoO{sub x}, we observe a substantial gain in photocurrent of 1.9?mA/cm{sup 2} in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.

Battaglia, Corsin; Yin, Xingtian; Zheng, Maxwell; Javey, Ali, E-mail: ajavey@eecs.berkeley.edu [Electrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Martn de Nicols, Silvia; De Wolf, Stefaan; Ballif, Christophe [Photovoltaics and Thin Film Electronics Laboratory, Ecole Polytechnique Fdrale de Lausanne, 2000 Neuchtel (Switzerland)

2014-03-17T23:59:59.000Z

253

Device physics and characterization of silicon point-contact solar cells  

SciTech Connect (OSTI)

The silicon point-contact solar cell is a candidate solar cell for use in highly concentrated sunlight. Recent progress is described for a point-contact solar cell optimized for incident power densities of 36 Watts/cm/sup 2/. The design and fabrication for several device runs is discussed in detail. Extensive data from these solar cells is presented in order to display the major trends in device design and performance. The data culminate in a solar cell that is 28% efficient for incident power densities between 4 and 15 watts/cm/sup 2/ at 25/sup 0/C. Utilizing measurements from several runs of solar cells, a three-dimensional model is compared to the data in order to establish a strong baseline case from which future design enhancements can be evaluated. A modeling study of the optimum geometries for point-contact solar cells provides the context for a discussion of the device physics of the solar-cell operation. These studies indicate that efficiencies exceeding 30% may soon be attained. The ultimate efficiency of silicon solar cells will be limited parasitic Auger recombination. With the model, a device is optimized to measure the carrier lifetimes in highly-injected silicon in the carrier density range of interest for solar cell operation, 1 X 10/sup 15/ to 2 x 10/sup 17/ carriers/cm/sup 2/.

Sinton, R.A.

1987-01-01T23:59:59.000Z

254

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network [OSTI]

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

255

Nano-photonic Light Trapping In Thin Film Solar Dennis M. Callahan Jr.  

E-Print Network [OSTI]

Nano-photonic Light Trapping In Thin Film Solar Cells Thesis by Dennis M. Callahan Jr. In Partial. Jeremy Munday for helping me get started on the thin-film GaAs project and for all the time we spent to thank Dr. Jonathan Grandidier for working closely with me for a couple years on the nano sphere solar

Winfree, Erik

256

Novel textured glass substrate with high light trapping capacity for thin film Si solar cells application  

Science Journals Connector (OSTI)

A novel large feature size crater like glass substrate was proposed in this paper. P-i-n type microcrystalline silicon film solar cell with higher external quantum efficiency was...

Wang, Yanfeng; Zhang, xiaodan; Bai, Lisha; Huang, Qian; Wei, Changchun; Zhao, Ying

257

Amorphous-Silicon Thin-Film Transistors Using Chemical Vapor Deposition of Disilane  

Science Journals Connector (OSTI)

Amorphous silicon layers have been deposited by low pressure chemical vapour deposition at 450C using disilane as the only source gas. Simple inverted staggered thin-film transistors were made with thermal silicon dioxide as the gate insulator. Field-effect mobilities for electrons and holes were 1.4 cm2/V s and 0.1 cm2/V s, respectively. In order to obtain these high mobilities the transistor structures were carefully annealed in a hydrogen-radical rich ambient.

PaulA. Breddels; Hiroshi Kanoh; Osamu Sugiura; Masakiyo Matsumura

1990-01-01T23:59:59.000Z

258

Light harvesting enhancement in solar cells with quasicrystalline plasmonic structures  

Science Journals Connector (OSTI)

Solar cells are important in the area of renewable energies. Since it is expensive to produce solar-grade silicon [Electrochem. Soc. Interface 17, 30 (2008)], especially thin-film...

Bauer, Christina; Giessen, Harald

2013-01-01T23:59:59.000Z

259

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology  

Broader source: Energy.gov (indexed) [DOE]

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Program Manager, Solar Program Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be using technology pioneered at the Department of Energy's National Renewable Energy Lab (NREL). The record-breaking Cadmium-Telluride (CdTe) thin film photovoltaic technology GE has chosen for its solar panels was originally developed more than a decade ago by a team of scientists led by NREL's Xuanzhi Wu, and

260

Fatigue failure in thin-film polycrystalline silicon is due to subcritical cracking within the oxide layer  

E-Print Network [OSTI]

Fatigue failure in thin-film polycrystalline silicon is due to subcritical cracking within with stress-induced surface oxide thicken- ing and moisture-assisted subcritical cracking in the amor- phous

Ritchie, Robert

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Recombination and Trapping in Multicrystalline Silicon Solar Cells .  

E-Print Network [OSTI]

??In broad terms, this thesis is concerned with the measurement and interpretation of carrier lifetimes in multicrystalline silicon. An understanding of these lifetimes in turn (more)

Macdonald, D

2008-01-01T23:59:59.000Z

262

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network [OSTI]

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

263

Enhancement of optical absorption in thin-film organic solar cells through the excitation of plasmonic modes in metallic gratings  

E-Print Network [OSTI]

Enhancement of optical absorption in thin-film organic solar cells through the excitation 2010 We theoretically investigate the enhancement of optical absorption in thin-film organic solar.1063/1.3377791 Thin-film organic solar cells OSCs are a promising candidate for low-cost energy conversion.1­6 However

Veronis, Georgios

264

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network [OSTI]

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells Company has had a conti- nuous effort on thin film solar cells for the past four and a half years

Paris-Sud XI, Université de

265

Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High efficiency and junction property  

E-Print Network [OSTI]

Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High-conductor-free organic lead iodide thin film solar cells have been fabricated with a sequential deposition method are comparable to that of the high-efficiency thin-film solar cells. VC 2014 AIP Publishing LLC. [http

Wang, Wei Hua

266

Properties of boron-doped thin films of polycrystalline silicon  

SciTech Connect (OSTI)

The properties of polycrystalline-silicon films deposited by low pressure chemical vapor deposition and doped heavily in situ boron-doped with concentration level of around 210{sup 20}cm{sup ?3} has been studied. Their properties are analyzed using electrical and structural characterization means by four points probe resistivity measurements and X-ray diffraction spectra. The thermal-oxidation process are performed on sub-micron layers of 200nm/c-Si and 200nm/SiO{sub 2} deposited at temperatures T{sub d} ranged between 520C and 605C and thermally-oxidized in dry oxygen ambient at 945C. Compared to the as-grown resistivity with silicon wafers is known to be in the following sequence < and < . The measure X-ray spectra is shown, that the Bragg peaks are marked according to the crystal orientation in the film deposited on bare substrates (poly/c-Si), for the second series of films deposited on bare oxidized substrates (poly/SiO{sub 2}) are clearly different.

Merabet, Souad [Electronic Department, Faculty of Science and Technology, University of Jijel, Cit Ouled-Aissa B. P. 98 Jijel, 18 000 Jijel (Algeria)

2013-12-16T23:59:59.000Z

267

Near perfect solar absorption in ultra-thin-film GaAs photonic crystals  

E-Print Network [OSTI]

Near perfect solar absorption in ultra-thin-film GaAs photonic crystals Sergey Eyderman,*a Alexei Deinegaa and Sajeev Johnab We present designs that enable a significant increase of solar absorption­99.5% solar absorption is demonstrated depending on the photonic crystal architecture used and the nature

John, Sajeev

268

Rapid Deposition Technology Holds the Key for the World's Largest Manufacturer of Thin-Film Solar Modules (Fact Sheet)  

SciTech Connect (OSTI)

First Solar, Inc. has been collaborating with NREL since 1991, advancing its thin-film cadmium telluride solar technology to grow from a startup company to become one of the world's largest manufacturers of solar modules, and the world's largest manufacturer of thin-film solar modules.

Not Available

2013-08-01T23:59:59.000Z

269

Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD  

SciTech Connect (OSTI)

An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed increase in the optical bandgap of a-Si:H films close to the a-Si:H/cSi interface.

Abdulraheem, Yaser, E-mail: yaser.abdulraheem@kuniv.edu.kw [Electrical Engineering Department, College of Engineering and Petroleum, Kuwait University. P.O. Box 5969, 13060 Safat (Kuwait); Gordon, Ivan; Bearda, Twan; Meddeb, Hosny; Poortmans, Jozef [IMEC, Kapeldreef 75, 3001, Leuven (Belgium)

2014-05-15T23:59:59.000Z

270

Fundamental understanding and development of low-cost, high-efficiency silicon solar cells  

SciTech Connect (OSTI)

The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

ROHATGI,A.; NARASIMHA,S.; MOSCHER,J.; EBONG,A.; KAMRA,S.; KRYGOWSKI,T.; DOSHI,P.; RISTOW,A.; YELUNDUR,V.; RUBY,DOUGLAS S.

2000-05-01T23:59:59.000Z

271

Alternative technology used to manufacture semitransparent monocrystalline silicon solar cells  

Science Journals Connector (OSTI)

This paper presents the manufacturing technology of a new semitransparent solar cell that can be used for building integrated ... anisotropic etching. The efficiency of the semitransparent solar cell is 6.12% in...

Enik? Bndy; Mrta Rencz

2013-06-01T23:59:59.000Z

272

Decoupling bulk- and surface-limited lifetimes in thin kerfless silicon wafers using spectrally resolved transient absorption pump-probe spectroscopy and computer simulations  

E-Print Network [OSTI]

One of the key technological objectives to further decrease the cost of silicon (Si) PV and enable manufacturing of crystalline silicon is to improve the quality of thin, kerfless Si wafers to monocrystalline equivalent. ...

Siah, Sin Cheng

2013-01-01T23:59:59.000Z

273

Transfer Printing Methods for Flexible Thin Film Solar Cells: Basic Concepts and Working Principles  

Science Journals Connector (OSTI)

Thin film solar cells (TFSCs) that are fabricated on flexible substrates, such as plastics, paper, and fabrics, will significantly broaden the applications of solar cells, ranging from wearable solar chargers for portable electronics, building-integrated photovoltaics on sidewalls and curved rooftops, to lightweight solar cells for aerospace and space applications. ... Our study shows that photovoltaic tiles can combine energy generation with architectural aesthetics leading to significant implications for advancement in building integrated photovoltaics. ...

Chi Hwan Lee; Dong Rip Kim; Xiaolin Zheng

2014-09-03T23:59:59.000Z

274

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa  

E-Print Network [OSTI]

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa , Alessio in the fabrication of high efficiency CdTe/CdS thin film solar cells. Usually, it is done first by etching the Cd: Back Contact, CdTe, Thin Film 1 INTRODUCTION The back contact in the CdTe/CdS thin film solar cell

Romeo, Alessandro

275

PV Crystalox Solar AG formerly PV Silicon AG | Open Energy Information  

Open Energy Info (EERE)

PV Crystalox Solar AG formerly PV Silicon AG PV Crystalox Solar AG formerly PV Silicon AG Jump to: navigation, search Name PV Crystalox Solar AG (formerly PV Silicon AG) Place Abingdon, England, United Kingdom Zip OX14 4SE Sector Solar Product UK-based manufacturer of multicrystalline ingots and wafers to the solar industry; as of early 2009, to output solar-grade polysilicon. Coordinates 36.71049°, -81.975194° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":36.71049,"lon":-81.975194,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

276

Proof of damage-free selective removal of thin dielectric coatings on silicon wafers by irradiation with femtosecond laser pulses  

SciTech Connect (OSTI)

The microstructural impact of selective femtosecond laser ablation of thin dielectric layers from monocrystalline silicon wafers was investigated. Various spots opened by 280 fs laser pulses at {lambda} = 1.03 {mu}m wavelength and 50 fs pulses at 800 nm, respectively, were analyzed in detail using Raman and transmission electron microscopy. The results show clearly that the thin dielectric films can be removed without any detectable modification of the Si crystal structure in the opened area. In contrast, in adjacent regions corresponding to laser fluence slightly below the breaking threshold, a thin layer of amorphous silicon with a maximum thickness of about 50 nm is found at the Si/SiO{sub 2} interface after laser irradiation. More than one pulse on the same position, however, causes structural modification of the silicon after thin film ablation in any case.

Rublack, Tino; Muchow, Markus [Zentrum fuer Innovationskompetenz SiLi-nano, Martin-Luther-Universitaet Halle-Wittenberg, 06120 Halle (Germany); Schade, Martin; Leipner, Hartmut S. [Interdisziplinaeres Zentrum fuer Materialwissenschaften, Martin-Luther-Universitaet Halle-Wittenberg, 06099 Halle (Germany); Seifert, Gerhard [Zentrum fuer Innovationskompetenz SiLi-nano, Martin-Luther-Universitaet Halle-Wittenberg, 06120 Halle (Germany); Fraunhofer-Center for Silicon Photovoltaics CSP, 06120 Halle (Germany)

2012-07-15T23:59:59.000Z

277

Design of plasmonic back structures for efficiency enhancement of thin-film amorphous Si solar cells  

Science Journals Connector (OSTI)

Metallic back structures with one-dimensional periodic nanoridges attached to a thin-film amorphous Si (a-Si) solar cell are numerically studied. At the interfaces between a-Si and...

Bai, Wenli; Gan, Qiaoqiang; Bartoli, Filbert; Zhang, Jing; Cai, Likang; Huang, Yidong; Song, Guofeng

2009-01-01T23:59:59.000Z

278

Nanoscale Materials for Thin Film Cu(In,Ga)Se2 Solar Cells  

Science Journals Connector (OSTI)

Cu(In,Ga)Se2 solar cells show the highest efficiencies of all thin film technologies. Nano-particulate precursor materials could have the potential to lead this technology to...

Ahlswede, Erik

279

Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics  

E-Print Network [OSTI]

CuIn(Se,S) 2 solar cell with a PCE of 11.1% under dark andpower conversion efficiency (PCE) of around 20% among thinAchievement of such high PCE can be largely ascribed to the

Chung, Choong-Heui

2012-01-01T23:59:59.000Z

280

Electron-reflector strategy for CdTe thin-film solar cells.  

E-Print Network [OSTI]

??The CdTe thin-film solar cell has a large absorption coefficient and high theoretical efficiency. Moreover, large-area photovoltaic panels can be economically fabricated. These features potentially (more)

Hsiao, Kuo-Jui

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Approaches to fabricating high-efficiency ultra-thin CdTe solar cells.  

E-Print Network [OSTI]

??This thesis is an investigation of the fabrication, characterization and performance of high-efficiency and ultra-thin CdTe solar cells with an aim of reducing the material (more)

Xia, Wei (1981 - )

2013-01-01T23:59:59.000Z

282

Earth-Abundant Materials for High-Efficiency Heterojunction Thin Film Solar Cells  

Science Journals Connector (OSTI)

We investigate materials for thin film solar cells that can meet tens of terawatts level deployment potential. As one of the candidates, cuprous oxide (Cu2O) is synthesized and...

Lee, Yun Seog; Bertoni, Mariana; Buonassisi, Tonio

283

Technological assessment of light-trapping technology for thin-film Si solar cell  

E-Print Network [OSTI]

The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was analyzed from the technology, market, and ...

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

284

Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer  

E-Print Network [OSTI]

Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric current gain obtained...

Lu, Tianlin

2012-07-16T23:59:59.000Z

285

Silicon Ink Technology Offers Path to Higher Efficiency Solar...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

startup companies cross technological barriers to commercialization while encouraging private investment. The Solar Energy Technologies Office (SETO) focuses on achieving the...

286

Hole Selective MoOx Contact for Silicon Solar Cells Corsin Battaglia,,,  

E-Print Network [OSTI]

Hole Selective MoOx Contact for Silicon Solar Cells Corsin Battaglia,,, Xingtian Yin,,,§, Maxwell, University of California, Berkeley, California 94720, United States Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States § Electronic Materials Research

Javey, Ali

287

Siliconized Triarylamines As Redox Mediator in Dye-Sensitized Solar Cells  

Science Journals Connector (OSTI)

Siliconized Triarylamines As Redox Mediator in Dye-Sensitized Solar Cells ... We thank the Canadian Foundation for Innovation (CFI) and the Natural Sciences and Engineering Research Council of Canada (NSERC), York University (S.M.), and University of Toronto (T.P.B.) for their financial support. ...

Ali Sepehrifard; Brett A. Kamino; Timothy P. Bender; Sylvie Morin

2012-10-31T23:59:59.000Z

288

Exclusively Thermal Donor-doped Cz Wafers for Silicon Heterojunction Solar Cell Technology  

Science Journals Connector (OSTI)

Abstract In this paper, a first evaluation of the compatibility between thermal donor-doped Czochralski silicon and the hydrogenated amorphous Silicon/crystalline Silicon heterojunction technology, is presented. The wafers resistivity was adjusted thanks to the controlled thermal donors generation through 450C anneals of calculated durations, following a model detailed in this paper. Minority carrier lifetimes higher than 2 milliseconds, matching the requirements of the heterojunction technology used, were demonstrated. The solar cells were manufactured and efficiencies comparable to cells based on high quality Float-Zone substrates were obtained. The stability of the solar cells performances under illumination and temperature was also assessed, and revealed no degradation of the bulk quality even after prolonged illumination.

Frdric Jay; Jordi Veirman; Nora Najid; Delfina Muoz; Sbastien Dubois; Anis Jouini

2014-01-01T23:59:59.000Z

289

Mass production of high efficiency selective emitter crystalline silicon solar cells employing phosphorus ink technology  

Science Journals Connector (OSTI)

Abstract Phosphorus ink technology has been demonstrated as a simple and cheap method to realize selective emitter (SE) crystalline silicon solar cells through mass production in a professional photovoltaic company. We have achieved an average conversion efficiency (?) of 19.01% with peak ? of 19.27% for the SE solar cells based on commercial-grade p-type silicon substrate, much higher than that of the homogeneous emitter counterparts whose average ? is 18.56%. The standard deviation of the performance for these SE solar cells is also smaller, indicating better repeatability of the phosphorus ink SE technology. Moreover, the SE silicon solar cells can well adapt to various Ag pastes while preserving high cell performance, which offers an opportunity to choose a cheap Ag paste as front metallization material. With the aid of PC1D, we have shown that the ? of the SE solar cells can be further improved as the sheet resistance in the illuminated area increases from the present value of 70 to 120?/?.

Sihua Zhong; Wenzhong Shen; Feng Liu; Xiang Li

2013-01-01T23:59:59.000Z

290

Process and apparatus for casting multiple silicon wafer articles  

DOE Patents [OSTI]

Method and apparatus of casting silicon produced by the reaction between SiF.sub.4 and an alkaline earth metal into thin wafer-shaped articles suitable for solar cell fabrication.

Nanis, Leonard (Palo Alto, CA)

1992-05-05T23:59:59.000Z

291

Silicon Thin-Film Formation by Direct Photochemical Decomposition of Disilane  

Science Journals Connector (OSTI)

Silicon thin-films have been deposited by the direct photolysis of disilane at a substrate temperature below 300C. The growth rate depends on irradiation intensity of a low pressure mercury-lamp, and a typical rate of 15 /min has been obtained under ~0.08 watts/cm2 illumination, regardless of substrate temperature. The deposited films are composed of an amorphous network containing bonded-hydrogen in the range 69 at.%. The bonding configurations of SiH groups varied from silicon dihydride to monohydride with increasing substrate temperature, and correspondingly the dark conductivity decreased from 10-7 to 10-11 ?-1cm-1. A broad photoluminescence peak at 1.4 eV was observed for a specimen grown at 200C.

Yasuyoshi Mishima; Masataka Hirose; Yukio Osaka; Kunihiro Nagamine; Yoshinori Ashida; Nobuhisa Kitagawa; Kazuyoshi Isogaya

1983-01-01T23:59:59.000Z

292

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY  

E-Print Network [OSTI]

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION, A. N. Tiwari Thin Film Physics Group, Laboratory for Solid State Physics, Technopark ETH-Building, Technoparkstr. 1, CH-8005 Zurich, Switzerland ABSTRACT: CdTe/CdS thin £lm solar cells have been grown by closed

Romeo, Alessandro

293

Enhanced performance of solar cells with optimized surface recombination and efficient photon capturing via anisotropic-etching of black silicon  

SciTech Connect (OSTI)

We report an enhanced conversion efficiency of femtosecond-laser treated silicon solar cells by surface modification of anisotropic-etching. The etching improves minority carrier lifetime inside modified black silicon area substantially; moreover, after the etching, an inverted pyramids/upright pyramids mixed texture surface is obtained, which shows better photon capturing capability than that of conventional pyramid texture. Combing of these two merits, the reformed solar cells show higher conversion efficiency than that of conventional pyramid textured cells. This work presents a way for fabricating high performance silicon solar cells, which can be easily applied to mass-production.

Chen, H. Y.; Peng, Y., E-mail: gdyuan@semi.ac.cn, E-mail: py@usst.edu.cn; Hong, M.; Zhang, Y. B.; Cai, Bin; Zhu, Y. M. [Shanghai Key Lab of Modern Optical System and Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai 200093 (China); Yuan, G. D., E-mail: gdyuan@semi.ac.cn, E-mail: py@usst.edu.cn; Zhang, Y.; Liu, Z. Q.; Wang, J. X.; Li, J. M. [Semiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2014-05-12T23:59:59.000Z

294

DISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

-scale problems such as energy demand, pollution, and environment safety. The cost ($/kWh) is the primaryDISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS AND MODULES WITH 2-D-FILM SOLAR CELLS AND MODULES WITH 2-D SIMULATIONS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS

Sites, James R.

295

Solar energy: A new day dawning?: Silicon Valley sunrise  

Science Journals Connector (OSTI)

... The Sun provides Earth with as much energy every hour as human civilization uses every year. If you are a ... every hour as human civilization uses every year. If you are a solar- ...

Oliver Morton

2006-09-06T23:59:59.000Z

296

New Wire Silicon Slicing Technology for Solar Cell  

Science Journals Connector (OSTI)

Firstly a prototype machine using Multicutting wire technology (MCWT) is described. The influence of ... and damaged layer are suitable for the present solar cell technology. Further decreasing cost steps are com...

H. Lauvray; A. Talpied; J. P. Besselere

1981-01-01T23:59:59.000Z

297

Purifying metallurgical silicon to solar grade silicon by metal-assisted chemical etching  

Science Journals Connector (OSTI)

Metal impurities have detrimental effects on the performance of Si solar cells. Through metal assisted chemical etching, we fabricate Si nanowires from metallurgical Si while purifying...

Li, Xiaopeng; Sprafke, Alexander N; Schweizer, Stefan L; Wehrspohn, Ralf

298

Rapid Thermal Processing of High Efficiency n-Type Silicon Solar Cells with Al Back Junction  

SciTech Connect (OSTI)

In this paper we report on the design, fabrication and modeling of 49 cm{sup 2}, 200-{micro}m thick, 1-5 {Omega}-cm, n- and p-type <111> and <100> screen-printed silicon solar cells. A simple process involving RTP front surface phosphorus diffusion, low frequency PECVD silicon nitride deposition, screen-printing of Al metal and Ag front grid followed by co-firing of front and back contacts produced cell efficiencies of 15.4% on n-type <111> Si, 15.1% on n-type <100> Si, 15.8% on p-type <111> Si and 16.1% on p-type <100> Si. Open circuit voltage was comparable for n and p type cells and was also independent of wafer orientation. High fill factor values (0.771-0.783) for all the devices ruled out appreciable shunting which has been a problem for the development of co-fired n-type <100> silicon solar cells with Al back junction. Model calculations were performed using PC1D to support the experimental results and provide guidelines for achieving >17% n-type silicon solar cells by rapid firing of Al back junction.

Ebong, A.; Upadhyaya, V.; Rounsaville, B.; Kim, D. S.; Meemongkolkiat, V.; Rohatgi, A.; Al-Jassim, M. M.; Jones, K. M.; To, B.

2006-01-01T23:59:59.000Z

299

14th Workshop on Crystalline Silicon Solar Cells& Modules: Materials and Processes; Summary of Discussion Sessions  

SciTech Connect (OSTI)

The 14th Workshop discussion sessions addressed funding needs for Si research and for R&D to enhance U.S. PV manufacturing. The wrap-up session specifically addressed topics for the new university silicon program. The theme of the workshop, Crystalline Silicon Solar Cells: Leapfrogging the Barriers, was selected to reflect the astounding progress in Si PV technology during last three decades, despite a host of barriers and bottlenecks. A combination of oral, poster, and discussion sessions addressed recent advances in crystal growth technology, new cell structures and doping methods, silicon feedstock issues, hydrogen passivation and fire through metallization, and module issues/reliability. The following oral/discussion sessions were conducted: (1) Technology Update; (2) Defects and Impurities in Si/Discussion; (3) Rump Session; (4) Module Issues and Reliability/Discussion; (5) Silicon Feedstock/Discussion; (6) Novel Doping, Cells, and Hetero-Structure Designs/Discussion; (7) Metallization/Silicon Nitride Processing/Discussion; (8) Hydrogen Passivation/Discussion; (9) Characterization/Discussion; and (10) Wrap-Up. This year's workshop lasted three and a half days and, for the first time, included a session on Si modules. A rump session was held on the evening of August 8, which addressed efficiency expectations and challenges of c Si solar cells/modules. Richard King of DOE and Daren Dance of Wright Williams& Kelly (formerly of Sematech) spoke at two of the luncheon sessions. Eleven students received Graduate Student Awards from funds contributed by the PV industry.

Sopori, B.; Tan, T.; Sinton, R.; Swanson, D.

2004-10-01T23:59:59.000Z

300

Application of lasers in solar cell technologies  

Science Journals Connector (OSTI)

The possibilities for applying lasers to the fabrication of solar cells (the laser texturing of silicon surfaces and pulsed laser deposition of indium tin oxide (ITO) thin films) are demonstrated.

D. A. Zuev; A. A. Lotin; O. A. Novodvorsky

2012-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Signet Solar Inc | Open Energy Information  

Open Energy Info (EERE)

Palo Alto, California Zip: 94306 Product: US-based manufacturer of amorphous silicon thin-film modules. References: Signet Solar Inc1 This article is a stub. You can help OpenEI...

302

T Solar Global SA | Open Energy Information  

Open Energy Info (EERE)

T-Solar Global SA Place: Madrid, Spain Zip: 28042 Product: Spain-based thin-film silicon PV cell and module maker, using Applied Materials equipment. The firm is also a major...

303

Terra Solar Global Inc | Open Energy Information  

Open Energy Info (EERE)

Global Inc Jump to: navigation, search Name: Terra Solar Global Inc Place: New York, New York Zip: 10111-2000 Product: US-based manufacturer of amorphous silicon (a-Si) thin-film...

304

NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)  

SciTech Connect (OSTI)

Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

Not Available

2012-09-01T23:59:59.000Z

305

Silicon-based hybrid cell for harvesting solar energy and raindrop electrostatic energy  

Science Journals Connector (OSTI)

Abstract Silicon-based solar cell is by far the most established solar cell technology. The surface of a Si solar cell is usually covered by a layer of transparent material to protect the device from environmental damages/corrosions. Here, we replaced this protection layer by a transparent triboelectric nanogeneartor (TENG), for simultaneously or individually harvesting solar and raindrop energy when either or both of them are available in our living environment. The TENG is made of a specially processed polytetrafluoroethylene (PTFE) film, an indium tin oxide (ITO) and a polyethylene terephthalate (PET) layer. Under solar light irradiation (12W/m2) in a rainy day, the fabricated high-efficiency solar cell provides an open-circuit (Voc) of 0.43V and short-circuit current density (Jsc) of 4.2A/m2. And the TENG designed for collection of raindrop energy gives an AC Voc of 30V and Jsc of 4.2mA/m2 when impacted by water drops at a dripping rate of 0.116ml/s. In rainy days, the performance of solar cell decreased greatly, while TENG can be a good compensation as for green energy harvesting. From these results, we can see that the hybrid cell formed by a solar cell and a water-drop TENG have great potential for simultaneously/individually harvesting both solar energy and raindrop electrostatic energy under different weather conditions, especially in raining season.

Li Zheng; Zong-Hong Lin; Gang Cheng; Wenzhuo Wu; Xiaonan Wen; Sangmin Lee; Zhong Lin Wang

2014-01-01T23:59:59.000Z

306

Tax Credits Give Thin-Film Solar a Big Boost | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Tax Credits Give Thin-Film Solar a Big Boost Tax Credits Give Thin-Film Solar a Big Boost Tax Credits Give Thin-Film Solar a Big Boost October 18, 2010 - 2:00pm Addthis MiaSolé will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.| Photo courtesy of MiaSolé MiaSolé will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.| Photo courtesy of MiaSolé Lorelei Laird Writer, Energy Empowers What are the key facts? MiaSolé adding more than ten times its current manufacturing capacity Company expects to double or triple its workforce with expansion Expansion is funded by $101 million in Recovery Act tax credit For MiaSolé, a relative newcomer to the solar energy market, 2010 has been

307

Enhanced Efficiency of Light-Trapping Nanoantenna Arrays for Thin Film Solar Cells  

E-Print Network [OSTI]

We suggest a novel concept of efficient light-trapping structures for thin-film solar cells based on arrays of planar nanoantennas operating far from plasmonic resonances. The operation principle of our structures relies on the excitation of chessboard-like collective modes of the nanoantenna arrays with the field localized between the neighboring metal elements. We demonstrated theoretically substantial enhancement of solar-cell short-circuit current by the designed light-trapping structure in the whole spectrum range of the solar-cell operation compared to conventional structures employing anti-reflecting coating. Our approach provides a general background for a design of different types of efficient broadband light-trapping structures for thin-film solar-cell technologically compatible with large-area thin-film fabrication techniques.

Simovski, Constantin R; Voroshilov, Pavel M; Guzhva, Michael E; Belov, Pavel A; Kivshar, Yuri S

2013-01-01T23:59:59.000Z

308

The influence of passivation and photovoltaic properties of ?-Si:H coverage on silicon nanowire array solar cells  

Science Journals Connector (OSTI)

Silicon nanowire (SiNW) arrays for radial p-n junction solar cells offer potential advantages of light trapping effects and quick charge collection. Nevertheless, lower open circuit voltages (V oc

KunTang Li; XiuQin Wang; PengFei Lu; JianNing Ding

2013-09-01T23:59:59.000Z

309

The use of laser technology to shape properties of the contacts of silicon solar cells and their structure  

Science Journals Connector (OSTI)

The paper presents the results of the investigation of the front contact manufactured using silver pastes (based on experimentally prepared silver powder) on monocrystalline silicon solar cells in order to red...

Ma?gorzata Musztyfaga-Staszuk; Leszek A. Dobrza?ski

2014-12-01T23:59:59.000Z

310

Interactions between radical growth precursors on plasma-deposited silicon thin-film surfaces  

SciTech Connect (OSTI)

We present a detailed analysis of the interactions between growth precursors, SiH{sub 3} radicals, on surfaces of silicon thin films. The analysis is based on a synergistic combination of density functional theory calculations on the hydrogen-terminated Si(001)-(2x1) surface and molecular-dynamics (MD) simulations of film growth on surfaces of MD-generated hydrogenated amorphous silicon (a-Si:H) thin films. In particular, the authors find that two interacting growth precursors may either form disilane (Si{sub 2}H{sub 6}) and desorb from the surface, or disproportionate, resulting in the formation of a surface dihydride (adsorbed SiH{sub 2} species) and gas-phase silane (SiH{sub 4}). The reaction barrier for disilane formation is found to be strongly dependent on the local chemical environment on the silicon surface and reduces (or vanishes) if one/both of the interacting precursors is/are in a ''fast diffusing state,'' i.e., attached to fivefold coordinated surface Si atoms. Finally, activation energy barriers in excess of 1 eV are obtained for two chemisorbed (i.e., bonded to a fourfold coordinated surface Si atom) SiH{sub 3} radicals. Activation energy barriers for disproportionation follow the same tendency, though, in most cases, higher barriers are obtained compared to disilane formation reactions starting from the same initial configuration. MD simulations confirm that disilane formation and disproportionation reactions also occur on a-Si:H growth surfaces, preferentially in configurations where at least one of the SiH{sub 3} radicals is in a ''diffusive state.'' Our results are in agreement with experimental observations and results of plasma process simulators showing that the primary source for disilane in low-power plasmas may be the substrate surface.

Bakos, Tamas; Valipa, Mayur S.; Maroudas, Dimitrios [Department of Chemical Engineering, University of Massachusetts, Amherst, Massachusetts 01003-3110 (United States)

2007-03-21T23:59:59.000Z

311

Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells  

E-Print Network [OSTI]

the optical absorption length.10 This design has the potential to enable energy-conversion efficiencies near growth catalysts such as Cu.11 To obtain optimal energy-conversion efficiencies for solar cells based minority carrier diffusion lengths of 2 µm. Assuming bulk-dominated recombination, this value corresponds

Atwater, Harry

312

Low work function, stable thin films  

DOE Patents [OSTI]

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

2000-01-01T23:59:59.000Z

313

Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467  

SciTech Connect (OSTI)

This book was divided into the following parts: Staebler-Wronski and Fundamental Defect Studies in Amorphous Silicon; The Story of Hydrogen in Amorphous Silicon; Photoelectric Properties of Amorphous Silicon; Deposition and Properties of Microcrystalline Silicon; Deposition Studies for Amorphous Silicon and Related Materials; Solar Cells; Thin-Film Transistors; and Sensors and Novel Device Concepts. Separate abstracts were prepared for most of the papers in the volume.

Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I. [eds.

1997-07-01T23:59:59.000Z

314

Modeling and control of thin film surface morphology: application to thin film solar cells  

E-Print Network [OSTI]

Conference on Photovoltaic Energy Conversion. Conference17th European Photovoltaic Solar Energy Conference, 0:11,

Huang, Jianqiao

2012-01-01T23:59:59.000Z

315

Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes; Summary Discussion Sessions  

SciTech Connect (OSTI)

This report is a summary of the panel discussions included with the Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme of the workshop was ''Supporting the Transition to World Class Manufacturing.'' This workshop provided a forum for an informal exchange of information between researchers in the photovoltaic and nonphotovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helped establish a knowledge base that can be used for improving device-fabrication processes to enhance solar-cell performance and reduce cell costs. It also provided an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research.

Sopori, B.; Swanson, D.; Sinton, R.; Stavola, M.; Tan, T.

1998-12-08T23:59:59.000Z

316

Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon  

DOE Patents [OSTI]

A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby the amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenation can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

Kaschmitter, J.L.; Sigmon, T.W.

1995-10-10T23:59:59.000Z

317

Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon  

DOE Patents [OSTI]

A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby to amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenization can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

Kaschmitter, James L. (Pleasanton, CA); Sigmon, Thomas W. (Beaverton, OR)

1995-01-01T23:59:59.000Z

318

Multi-Layer Inkjet Printed Contacts for Silicon Solar Cells: Preprint  

SciTech Connect (OSTI)

Ag, Cu, and Ni metallizations were inkjet printed with near vacuum deposition quality. The approach developed can be easily extended to other conductors such as Pt, Pd, Au, etc. Thick highly conducting lines of Ag and Cu demonstrating good adhesion to glass, Si, and printed circuit board (PCB) have been printed at 100-200 C in air and N2 respectively. Ag grids were inkjet-printed on Si solar cells and fired through the silicon nitride AR layer at 850 C, resulting in 8% cells. Next generation inks, including an ink that etches silicon nitride, have now been developed. Multi-layer inkjet printing of the etching ink followed by Ag ink produced contacts under milder conditions and gave solar cells with efficiencies as high as 12%.

Curtis, C. J.; van hest, M.; Miedaner, A.; Kaydanova, T.; Smith, L.; Ginley, D. S.

2006-05-01T23:59:59.000Z

319

Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process  

DOE Patents [OSTI]

A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas.

Ruby, Douglas S. (Albuquerque, NM); Schubert, William K. (Albuquerque, NM); Gee, James M. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

320

Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process  

DOE Patents [OSTI]

A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas. 5 figs.

Ruby, D.S.; Schubert, W.K.; Gee, J.M.

1999-02-16T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Improved amorphous silicon alloy solar cells for module fabrication  

SciTech Connect (OSTI)

An initial conversion efficiency of 13.5% has been obtained on a triple-junction triple-bandgap device fabricated in a large-area deposition reactor capable of producing one-square-foot modules. The intrinsic layer of the top cell is a wide bandgap amorphous silicon alloy. The middle and bottom cells employ high quality amorphous silicon-germanium alloy. The high efficiency of the triple-junction cell is attributed to the relative reduction of the optical loss in the top tunnel junction and the improvement in the quality of the middle and bottom component cells. Triple-junction devices with initial efficiency of 13.3% have shown saturation at 11.6% after light soaking. Modules of aperture area 909 cm{sup 2} have been fabricated using an assembly process similar to the one being currently used in their manufacturing line. The module design consists of one large-area, high-current monolithic multijunction device. The status of the small-area devices and modules is described.

Banerjee, A.; Yang, J.; Guha, S.

1997-07-01T23:59:59.000Z

322

Low temperature front surface passivation of interdigitated back contact silicon heterojunction solar cell  

SciTech Connect (OSTI)

The interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell requires a low temperature front surface passivation/anti-reflection structure. Conventional silicon surface passivation using SiO2 or a-SiNx is performed at temperature higher than 400C, which is not suitable for the IBC-SHJ cell. In this paper, we propose a PECVD a-Si:H/a-SiNx:H/a-SiC:H stack structure to passivate the front surface of crystalline silicon at low temperature. The optical properties and passivation quality of this structure are characterized and solar cells using this structure are fabricated. With 2 nm a-Si:H layer, the stack structure exhibits stable passivation with effective minority carrier lifetime higher than 2 ms, and compatible with IBC-SHJ solar cell processing. A critical advantage of this structure is that the SiC allows it to be HF resistant, thus it can be deposited as the first step in the process. This protects the a-Si/c-Si interface and maintains a low surface recombination velocity.

Shu, Brent; Das, Ujjwal; Jani, Omkar; Hegedus, Steve; Birkmire, Robert

2009-06-08T23:59:59.000Z

323

Phase 2 of the array automated assembly task for the low cost silicon solar array project. Final report  

SciTech Connect (OSTI)

Studies were conducted on several fundamental aspects of electroless nickel/solder metallization for silicon solar cells. A process proposed by Motorola, which precedes the electroless nickel plating with several steps of palladium plating and heat treatment, was compared directly with single step electroless nickel plating. Work has directed toward answering specific questions concerning the effect of silicon surface oxide on nickel plating, effects of thermal stresses on the metallization, sintering of nickel plated on silicon, and effects of exposure to the plating solution on solar cell characteristics. The Motorola process was compared with simple electroless nickel plating in a series of parallel experiments. Results are presented. (WHK)

Petersen, R.C.

1980-11-01T23:59:59.000Z

324

Low-Cost Light Weigh Thin Film Solar Concentrators  

Broader source: Energy.gov [DOE]

This presentation was delivered at the SunShot Concentrating Solar Power (CSP) Program Review 2013, held April 2325, 2013 near Phoenix, Arizona.

325

CONCEPT: N-TYPE SILICON SOLAR CELLS WITH SURFACE-PASSIVATED SCREEN-PRINTED ALUMINUM-ALLOYED REAR EMITTER  

E-Print Network [OSTI]

THE ALU+ CONCEPT: N-TYPE SILICON SOLAR CELLS WITH SURFACE- PASSIVATED SCREEN-PRINTED ALUMINUM stability during firing in a conveyor belt furnace at 900°C. We implement our newly developed passivated Al-p+ emitter into an n + np + solar cell structure, the so-called ALU + cell. An independently confirmed

326

Review of Back Contact Silicon Solar Cells for Low-Cost Application  

SciTech Connect (OSTI)

Back contact solar cells hold significant promise for increased performance in photovoltaics for the near future. Two major advantages which these cells possess are a lack of grid shading loss and coplanar interconnection. Front contacted cells can have up to 10% shading loss when using screen printed metal grids. A front contact cell must also use solder connections which run from the front of one cell to the back of the next for series interconnection. This procedure is more difficult to automate than the case of co-planar contacts. The back contact cell design is not a recent concept. The earliest silicon solar cell developed by Bell Labs was a back contact device. There have been many design modifications to the basic concept over the years. To name a few, there is the Interdigitated Back Contact (IBC) cell, the Stanford Point contact solar cell, the Emitter Wrap Through (EWT), and its many variations. A number of these design concepts have demonstrated high efficiency. The SunPower back contact solar cell holds the efficiency record for silicon concentrator cells. The challenge is to produce a high efficiency cell at low cost using high throughput techniques. This has yet to be achieved with a back contact cell design. The focus of this paper will be to review the relevant features of back contact cells and progress made toward the goal of a low cost version of this device.

Smith, David D.

1999-08-04T23:59:59.000Z

327

BACK CONTACT MONOCRYSTALLINE THIN-FILM SILICON SOLAR CELLS FROM THE POROUS SILICON PROCESS  

E-Print Network [OSTI]

during phosphorous diffusion which is struc- tured afterwards. Figure 1a demonstrates how a Nd:YVO4 laser

328

May 2003 NREL/CP-520-33933 Amorphous and Thin-Film  

E-Print Network [OSTI]

Roedern, J. Yang, P. Sims, X. Deng, V. Dalal, D. Carlson, and T. Wang Presented at the National and Thin-Film Silicon Brent P. Nelson,1 Harry A. Atwater,2 Bolko von Roedern,1 Jeff Yang,3 Paul Sims,4. (c) "Thin Silicon-on-Ceramic Solar Cells" by Paul Sims. (d

Deng, Xunming

329

Recent improvements in materials for thin GaAs and multibandgap solar cells  

SciTech Connect (OSTI)

The High Efficiency Concepts Program at SERI supports research on III-V compound semiconductors with the objective of achieving the maximum attainable photovoltaic conversion efficiencies for terrestrial solar electric power. The outcome of this research may also affect the future of space photovoltaic cells. While the interest in thin-film, high-efficiency solar cells for terrestrial applications is driven principally by consideration of system costs, such cells would also improve the power density of space power arrays.

Benner, J.P.

1985-05-01T23:59:59.000Z

330

Novel wide band gap materials for highly efficient thin film tandem solar cells  

SciTech Connect (OSTI)

Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PVâ??s goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a mixture of solution and physical vapor deposition processing, but these films lacked the p-type doping levels that are required to make decent solar cells. Over the course of the project PLANT PV was able to fabricate efficient CIGS solar cells (8.7%) but could not achieve equivalent performance using AIGS. During the nine-month grant PLANT PV set up a variety of thin film characterization tools (e.g. drive-level capacitance profiling) at the Molecular Foundry, a Department of Energy User Facility, that are now available to both industrial and academic researchers via the grant process. PLANT PV was also able to develop the back end processing of thin film solar cells at Lawrence Berkeley National Labs to achieve 8.7% efficient CIGS solar cells. This processing development will be applied to other types of thin film PV cells at the Lawrence Berkeley National Labs. While PLANT PV was able to study AIGS film growth and optoelectronic properties we concluded that AIGS produced using these methods would have a limited efficiency and would not be commercially feasible. PLANT PV did not apply for the Phase II of this grant.

Brian E. Hardin, Stephen T. Connor, Craig H. Peters

2012-06-11T23:59:59.000Z

331

Solar-Grade Silicon from Metallurgical-Grade Silicon Via Iodine Chemical Vapor Transport Purification: Preprint  

SciTech Connect (OSTI)

This conference paper describes the atmospheric-pressure in an ''open'' reactor, SiI2 transfers from a hot (>1100C) Si source to a cooler (>750C) Si substrate and decomposes easily via 2SiI2 Si+ SiI4 with up to 5?m/min deposition rate. SiI4 returns to cyclically transport more Si. When the source is metallurgical-grade Si, impurities can be effectively removed by three mechanisms: (1) differing free energies of formation in forming silicon and impurity iodides; (2) distillation; and (3) differing standard free energies of formation during deposition. Distillation has been previously reported. Here, we focused on mechanisms (1) and (3). We made feedstock, analyzed the impurity levels, grew Czochralski single crystals, and evaluated crystal and photovoltaic properties. Cell efficiencies of 9.5% were obtained. Incorporating distillation (step 2) should increase this to a viable level.

Ciszek, T. F.; Wang, T. H.; Page, M. R.; Bauer, R. E.; Landry, M. D.

2002-05-01T23:59:59.000Z

332

Holographic Thin Film System for Multijunction Solar Cells  

Science Journals Connector (OSTI)

The efficiency of photovoltaic generators based on different semiconductor materials with optimized band gaps can achieve considerably higher values than those obtained with single junction solar cells. For th...

W. H. Bloss; M. Griesinger; E. R. Reinhardt

1983-01-01T23:59:59.000Z

333

Chapter IB-3 - Low-Cost Industrial Technologies for Crystalline Silicon Solar Cells  

Science Journals Connector (OSTI)

Publisher Summary Silicon substrates used in commercial solar cell processes contain a near-surface saw-damaged layer, which has to be removed at the beginning of the process. Thickness of the damage depends on the technique used in wafering of the ingot. A layer with thickness of 20 to 30 ?m has to be etched from both sides of wafers cut by an inner-diameter blade saw, while only 10 to 200 ? m is enough when a wire saw is used. The etching process has to be slightly modified when applied to multicrystalline substrates. Too fast or prolonged etching can produce steps at grain boundaries. This can lead to problems with interruptions of metal contacts. This problem can be avoided by an isotropic etching based on a mixture of nitric, acetic, and hydrofluoric acids. However, a strong exothermic reaction makes this etching process difficult to control and toxicity of the solution creates safety and waste disposal problems. The silicon surface after saw damage etching is shiny and reflects more than 35% of incident light. The reflection losses in commercial solar cells are reduced mainly by random chemical texturing. Surface texturing reduces the optical reflection from the single crystalline silicon surface to less than 10% by allowing the reflected ray to be recoupled into the cell.

Jozef Szlufcik; S. Sivoththaman; Johan F. Nijs; Robert P. Mertens; Roger Van Overstraeten

2012-01-01T23:59:59.000Z

334

The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1  

E-Print Network [OSTI]

1 The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1 , T.A. Gessert2 of Cu impurity inclusion in CdTe thin film solar cells, such as degradation caused by Cu diffusion , and Su-Huai Wei2 1 Department of Physics and Apollo CdTe Solar Energy Research Center, NJIT, Newark, NJ

335

Structural and chemical investigations of CBD-and PVD-CdS buffer layers and interfaces in Cu(In,Ga)Se2-based thin film solar cells  

E-Print Network [OSTI]

(In,Ga)Se2-based thin film solar cells D. Abou-Rasa,b,*, G. Kostorza , A. Romeob,1 , D. Rudmannb , A Available online 8 December 2004 Abstract It is known that high-efficiency thin film solar cells based on Cu; Chemical bath deposition; CdS buffer 1. Introduction The highest efficiencies for thin film solar cells

Romeo, Alessandro

336

Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems  

E-Print Network [OSTI]

microcrystalline- silicon photovoltaic cell, B) range ofpayback of roof mounted photovoltaic cells. Boustead, I. andmicrocrystalline-silicon photovoltaic cell, B) range of

Zhang, Teresa Weirui

2011-01-01T23:59:59.000Z

337

Public release of optimization of metallization scheme for thin emitter wrap-through solar cells for higher efficiency, reduced precious metal costs, and reduced stress.  

SciTech Connect (OSTI)

Back-contact crystalline-silicon photovoltaic solar cells and modules offer a number of advantages, including the elimination of grid shadowing losses, reduced cost through use of thinner silicon substrates, simpler module assembly, and improved aesthetics. While the existing edge tab method for interconnecting and stringing edge-connected back contact cells is acceptably straightforward and reliable, there are further gains to be exploited when you have both contact polarities on one side of the cell. In this work, we produce 'busbarless' emitter wrap-through solar cells that use 41% of the gridline silver (Ag) metallization mass compared to the edge tab design. Further, series resistance power losses are reduced by extraction of current from more places on the cell rear, leading to a fill factor improvement of about 6% (relative) on the module level. Series resistance and current-generation losses associated with large rear bondpads and busbars are eliminated. Use of thin silicon (Si) wafers is enabled because of the reduced Ag metallization mass and by interconnection with conductive adhesives leading to reduced bow. The busbarless cell design interconnected with conductive adhesives passes typical International Electrotechnical Commission damp heat and thermal cycling test.

Ruby, Douglas Scott; Murphy, Brian (Advent Solar, Inc., Albuquerque, NM); Meakin, David (Advent Solar, Inc., Albuquerque, NM); Dominguez, Jason (Advent Solar, Inc., Albuquerque, NM); Hacke, Peter (Advent Solar, Inc., Albuquerque, NM)

2008-08-01T23:59:59.000Z

338

Pyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stresses  

SciTech Connect (OSTI)

Ferroelectric lead zirconate titanate [Pb(Zr{sub x}Ti{sub 1-x}O){sub 3}, (PZT x:1-x)] has received considerable interest for applications related to uncooled infrared devices due to its large pyroelectric figures of merit near room temperature, and the fact that such devices are inherently ac coupled, allowing for simplified image post processing. For ferroelectric films made by industry-standard deposition techniques, stresses develop in the PZT layer upon cooling from the processing/growth temperature due to thermal mismatch between the film and the substrate. In this study, we use a non-linear thermodynamic model to investigate the pyroelectric properties of polycrystalline PZT thin films for five different compositions (PZT 40:60, PZT 30:70, PZT 20:80, PZT 10:90, PZT 0:100) on silicon as a function of processing temperature (25800?C). It is shown that the in-plane thermal stresses in PZT thin films alter the out-of-plane polarization and the ferroelectric phase transformation temperature, with profound effect on the pyroelectric properties. PZT 30:70 is found to have the largest pyroelectric coefficient (0.042??C cm{sup ?2}?C{sup ?1}, comparable to bulk values) at a growth temperature of 550?C; typical to what is currently used for many deposition processes. Our results indicate that it is possible to optimize the pyroelectric response of PZT thin films by adjusting the Ti composition and the processing temperature, thereby, enabling the tailoring of material properties for optimization relative to a specific deposition process.

Kesim, M. T.; Zhang, J.; Alpay, S. P. [Department of Materials Science and Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269 (United States); Trolier-McKinstry, S. [Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, Pennsylvania 16802 (United States); Mantese, J. V. [United Technologies Research Center, East Hartford, Connecticut 06118 (United States); Whatmore, R. W. [Tyndall National Institute, Lee Maltings, Dyke Parade, Cork City, County Cork (Ireland)

2013-11-28T23:59:59.000Z

339

Parallel FDTD Simulation of Photonic Crystals and Thin-Film Solar Cells  

Science Journals Connector (OSTI)

Finite difference time domain (FDTD) method is a robust and accurate algorithm which is widely used in computational electromagnetic field and the simulation of optical phenomenon. In this paper, parallel FDTD based on overlapped domain decomposition ... Keywords: finite difference time domain method, parallel, photonic crystal, thin-film solar cell, quantum efficiency

Wu Wang; Xuebin Chi; Yangde Feng; Yonghua Zhao

2012-12-01T23:59:59.000Z

340

Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells  

E-Print Network [OSTI]

of solar energy conversion be- cause they use thin films of photoactive material and can be manufactured achieving complete optical absorption and good carrier transport. A photoactive film thickness of 200 nm charge transport to allow for complete carrier extraction. To address this trade-off, absorption en

Fan, Shanhui

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

13th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers  

SciTech Connect (OSTI)

The 13th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. It will offer an excellent opportunity for researchers in private industry and at universities to prioritize mutual needs for future collaborative research. The workshop is intended to address the fundamental aspects of impurities and defects in silicon: their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. A combination of oral, poster, and discussion sessions will review recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands.

Sopori, B. L.; Rand, J.; Saitoh, T.; Sinton, R.; Stavola, M.; Swanson, D.; Tan, T.; Weber, E.; Werner, J.; Al-Jassim, M.

2003-08-01T23:59:59.000Z

342

Electrodeposition of Antimony Selenide Thin Films and Application in Semiconductor Sensitized Solar Cells  

Science Journals Connector (OSTI)

The currentvoltage characteristic of the cells were measured using a xenon arc lamp simulator (Sun 2000, ABET Technologies) with an AM 1.5 G spectral filter, and the intensity was adjusted to provide 1 sun (100 mW/cm2) using a calibrated silicon solar cell. ... In selenosulfate electrolyte, the cathodic current detected for V production of Se2 by means of SeSO32 + 2 e = Se2 + SO2. ... Indeed, the Jsc is similar to values reported for the state of the art of the inorganic semiconductor sensitized solar cells based on liquid(36) and organic(7) hole conductors. ...

T. Tuyen Ngo; Sudam Chavhan; Ivet Kosta; Oscar Miguel; Hans-Jurgen Grande; Ramn Tena-Zaera

2014-01-17T23:59:59.000Z

343

High deposition rate preparation of amorphous silicon solar cells by rf glow discharge decomposition of disilane  

SciTech Connect (OSTI)

The optical and electrical properties of hydrogenated amorphous silicon films produced by rf glow discharge decomposition of disilane diluted in helium (Si/sub 2/H/sub 6//He = 1/9) have been studied while systematically varying the film deposition rate. The properties and composition of the films were monitored by measuring the optical band gap, IR vibrational spectrum, dark conductivity, and the photoconductivity as a function of the deposition rate. The photoluminescence of the high deposition rate films gave a peak at 1.33 eV. These films, whose properties are rather similar to those of the conventional a-Si:H films prepared from monosilane, have been used to fabricate nip-type a-Si:H solar cells. At a deposition rate of 11 A/sec, a conversion efficiency of 6.86% was obtained. This high efficiency shows that disilane is applicable for mass production fabrication of a-Si:H solar cells.

Kenne, J.; Ohashi, Y.; Matsushita, T.; Konagai, M.; Takahashi, K.

1984-01-15T23:59:59.000Z

344

Vacuum deposited polycrystalline silicon films for solar cell applications. Quarterly report, September 15-December 31, 1979  

SciTech Connect (OSTI)

Polycrystalline silicon films 14-22 ..mu..m thick and with average grain diameters of 20-40 ..mu..m were deposited by vacuum deposition onto both ceramic and sapphire substrates which were previously coated with a thin (1-2 ..mu..m) TiB/sub 2/ conducting layer. The large grains are the result of an interaction in the initial growth stages between silicon and TiB/sub 2/. SIMS studies of B/Ti/Al/sub 2/O/sub 3/, B/Al/sub 2/O/sub 3/, and Ti/Al/sub 2/O/sub 3/, interactions are reported as part of a continuing investigation of TiB/sub 2/ formation and silicon interactions on the TiB/sub 2/ surface. The increase in grain size has led to an improvement in the open-circuit voltage V/sub oc/, but not to an increase in the short-circuit current J/sub sc/. Capacitance-voltage measurements give results characteristic of an abrupt junction and a build-in voltage V/sub D/ consistent with the measured doping levels. A simple method for measuring the minority carrier diffusion length in the base region L/sub n/ is described. The measurements indicate that there is little change in L/sub n/ between large (20-40 ..mu..m) and small (approx. 5 ..mu..m) grained samples.

Feldman, C.; Arrington, C. H.; Blum, N. A.; Satkiewicz, F. G.

1980-03-01T23:59:59.000Z

345

Solar Torx New Solar Ventures | Open Energy Information  

Open Energy Info (EERE)

Torx New Solar Ventures Torx New Solar Ventures Jump to: navigation, search Name Solar Torx / New Solar Ventures Place Arizona Product Set up in November 2005 to secure finance for a thin-film amorphous silicon cell and module manufacturing plant, and an associated 300MW power project. No evidence of progress as of June 2008, has probably been abandoned. References Solar Torx / New Solar Ventures[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Torx / New Solar Ventures is a company located in Arizona . References ↑ "Solar Torx / New Solar Ventures" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Torx_New_Solar_Ventures&oldid=351340" Categories:

346

Boron arsenide thin film solar cell development. Final report  

SciTech Connect (OSTI)

Pyrolytic decomposition of diborane and arsine has been used in attempts to grow polycrystalline BAs films. This method, however, produced only amorphous films for deposition temperatures below 920/sup 0/C and polycrystalline boron subarsenide (B/sub 12/As/sub 2/) flms for deposition temperatures above this value. The amorphous films have been determined to have a significant arsenic content but the actual stoichiometry was not obtained. The films were adherent on single crystal sapphire (0001), (111) silicon, (0001) SiC, and polycrystalline SiC but were found not to be adherent to substrates of fused quartz, tungsten, and molybdenum. It was also found that all films deposited above 650/sup 0/C were p-type while those deposited below 600/sup 0/C were usually n-type. Polycrystalline BAs and B/sub 12/As/sub 2/ was produced by reaction of the elements in a closed tube. The amorphous films showed an indirect or non-direct optical bandgap from 1.0 to 1.7 eV with the most probable values between 1.2 to 1.4 eV. The crystalline BAs powder shows a bandgap near 1.0 eV. Photoconductance time constants have been measured for films deposited on (0001) sapphire and (0001) SiC. Attempts at doping the amorphous films were generally unsuccessful. A polycrystalline powder sample was successfully doped with sulfur. Attempts were made to produce a Schottky barrier diode by evaporating Al dots onto an amorphous film on graphite without a post-evaporation anneal. An MIS structure was also attempted by baking an amorphous film in air at 280/sup 0/C before evaporation of aluminum. Although nonlinear characteristics were obtained, none of the devices showed any photovoltaic response. A p-type amorphous film was deposited on an n-type silicon substrate to form a p-n heterojunction. This device did exhibit a photovoltaic response but it is believed that the photogeneration was occurring primarily in the silicon substrate.

Boone, J.L.; Van Doren, T.P.

1980-09-01T23:59:59.000Z

347

Hydrogenated amorphous silicon films prepared by glow discharge of disilane  

SciTech Connect (OSTI)

This report describes the results of an investigation of the properties of hydrogenated amorphous silicon films and the efficiency of amorphous silicon solar cells deposited from disilane at rates of 1.5 nanometers/second or greater. The study was divided into two parts, investigation of basic materials properties of hydrogenated amorphous silicon thin films and the fabrication of glass-P-I-N-metal solar cells. The thin film materials properties investigated included the dark conductivity, photoconductivity, dihydride/monohydride concentration ratio, activation energy, and mobility-lifetime product. Hydrogenated amorphous silicon solar cells were fabricated with an intrinsic layer which was deposited at 1.5 nanometers/second. The absolute and reverse bias quantum yields were measured and solar cell efficiencies of 5% were achieved. Attempts to increase the efficiency by reverse bias annealing are also reported. 7 refs., 27 figs.

Wiesmann, H.J. (UHT Corp., Dobbs Ferry, NY (USA))

1990-01-01T23:59:59.000Z

348

Simulations of solar cell absorption enhancement using resonant modes  

E-Print Network [OSTI]

Simulations of solar cell absorption enhancement using resonant modes of a nanosphere array Jonathan Grandidier Michael G. Deceglie Dennis M. Callahan Harry A. Atwater #12;Simulations of solar cell for enhancing the absorption of thin-film amorphous silicon solar cells using periodic arrangements of resonant

Grandidier, Jonathan

349

First-Principles Study of Back Contact Effects on CdTe Thin Film Solar Cells  

SciTech Connect (OSTI)

Forming a chemically stable low-resistance back contact for CdTe thin-film solar cells is critically important to the cell performance. This paper reports theoretical study of the effects of the back-contact material, Sb{sub 2}Te{sub 3}, on the performance of the CdTe solar cells. First-principles calculations show that Sb impurities in p-type CdTe are donors and can diffuse with low diffusion barrier. There properties are clearly detrimental to the solar-cell performance. The Sb segregation into the grain boundaries may be required to explain the good efficiencies for the CdTe solar cells with Sb{sub 2}Te{sub 3} back contacts.

Du, Mao-Hua [ORNL

2009-01-01T23:59:59.000Z

350

Progress and future view of silicon space solar cells in Japan  

SciTech Connect (OSTI)

The progress and the future of silicon (Si) space solar cells in Japan are reviewed. In 1994, two types of the high-efficiency silicon (HES) cells were developed: (1) NRS/LBSF cell; (2) NRS/BSF cell. The former shows the conversion efficiency of 18.0% (AM0, 28 C) at beginning-of-life (BOL), the latter shows superior radiation tolerance. In 1998, the radiation tolerance of the NRS/BSF cell was improved; moreover, the advanced high-efficiency silicon-1 (AHES-1) cell was accomplished. It shows 13.1% at end-of-life (EOL). The development has been proceeded to make the 13.7% EOL cell: AHES-2 cell. In 1994, the integrated bypass function (IBF), which prevents failures due to reverse biasing of cells, was proposed. The NRS/BSF cells with IBF have been used already on several satellites. The structures, performance, and radiation tolerances of these cells are introduced. New approaches for further improvement are proposed in the future view.

Suzuki, Akio; Kaneiwa, Minoru; Saga, Tatsuo; Matsuda, Sumio

1999-10-01T23:59:59.000Z

351

Development of manufacturing capability for high-concentration, high-efficiency silicon solar cells  

SciTech Connect (OSTI)

This report presents a summary of the major results from a program to develop a manufacturable, high-efficiency silicon concentrator solar cell and a cost-effective manufacturing facility. The program was jointly funded by the Electric Power Research Institute, Sandia National Laboratories through the Concentrator Initiative, and SunPower Corporation. The key achievements of the program include the demonstration of 26%-efficient silicon concentrator solar cells with design-point (20 W/cm{sup 2}) efficiencies over 25%. High-performance front-surface passivations; that were developed to achieve this result were verified to be absolutely stable against degradation by 475 days of field exposure at twice the design concentration. SunPower demonstrated pilot production of more than 1500 of these cells. This cell technology was also applied to pilot production to supply 7000 17.7-cm{sup 2} one-sun cells (3500 yielded wafers) that demonstrated exceptional quality control. The average efficiency of 21.3% for these cells approaches the peak efficiency ever demonstrated for a single small laboratory cell within 2% (absolute). Extensive cost models were developed through this program and calibrated by the pilot-production project. The production levels achieved indicate that SunPower could produce 7-10 MW of concentrator cells per year in the current facility based upon the cell performance demonstrated during the program.

Sinton, R.A.; Verlinden, P.J.; Crane, R.A.; Swanson, R.N. [SunPower Corp., Sunnyvale, CA (United States)

1996-10-01T23:59:59.000Z

352

Reaching Grid Parity Using BP Solar Crystalline Silicon Technology: A Systems Class Application  

SciTech Connect (OSTI)

The primary target market for this program was the residential and commercial PV markets, drawing on BP Solar's premium product and service offerings, brand and marketing strength, and unique routes to market. These two markets were chosen because: (1) in 2005 they represented more than 50% of the overall US PV market; (2) they are the two markets that will likely meet grid parity first; and (3) they are the two market segments in which product development can lead to the added value necessary to generate market growth before reaching grid parity. Federal investment in this program resulted in substantial progress toward the DOE TPP target, providing significant advancements in the following areas: (1) Lower component costs particularly the modules and inverters. (2) Increased availability and lower cost of silicon feedstock. (3) Product specifically developed for residential and commercial applications. (4) Reducing the cost of installation through optimization of the products. (5) Increased value of electricity in mid-term to drive volume increases, via the green grid technology. (6) Large scale manufacture of PV products in the US, generating increased US employment in manufacturing and installation. To achieve these goals BP Solar assembled a team that included suppliers of critical materials, automated equipment developers/manufacturers, inverter and other BOS manufacturers, a utility company, and University research groups. The program addressed all aspects of the crystalline silicon PV business from raw materials (particularly silicon feedstock) through installation of the system on the customers site. By involving the material and equipment vendors, we ensured that supplies of silicon feedstock and other PV specific materials like encapsulation materials (EVA and cover glass) will be available in the quantities required to meet the DOE goals of 5 to 10 GW of installed US PV by 2015 and at the prices necessary for PV systems to reach grid parity in 2015. This final technical report highlights the accomplishments of the BP Solar technical team from 2006 to the end of the project in February 2010. All the main contributors and team members are recognized for this accomplishment and their endeavors are recorded in the twelve main tasks described here.

Cunningham, Daniel W; Wohlgemuth, John; Carlson, David E; Clark, Roger F; Gleaton, Mark; Posbic, John P; Zahler, James

2010-12-06T23:59:59.000Z

353

Silicon heterojunction solar cell with passivated hole selective MoOx contact Corsin Battaglia,1,2  

E-Print Network [OSTI]

amorphous silicon layer (a-Si:H) as surface passivation layer.3,4 Carrier selectivity at the contacts is traditionally achieved by depos- iting a doped a-Si:H layer after passivation. With this approach record open coefficient combined with a high defect density, a-Si:H, even when only a few nanometers thin, leads to sig

Javey, Ali

354

Solar Chemical Peculiarities?  

E-Print Network [OSTI]

Several investigations of FGK stars in the solar neighborhood have suggested that thin-disk stars with an iron abundance similar to the Sun appear to show higher abundances of other elements, such as silicon, titanium, or nickel. Offsets could arise if the samples contain stars with ages, mean galactocentric distances, or kinematics, that differ on average from the solar values. They could also arise due to systematic errors in the abundance determinations, if the samples contain stars that are different from the Sun regarding their atmospheric parameters. We re-examine this issue by studying a sample of 80 nearby stars with solar-like colors and luminosities. Among these solar "analogs", the objects with solar iron abundances exhibit solar abundances of carbon, silicon, calcium, titanium and nickel.

Carlos Allende Prieto

2006-12-08T23:59:59.000Z

355

Exciton harvesting, charge transfer, and charge-carrier transport in amorphous-silicon nanopillar/polymer hybrid solar cells  

E-Print Network [OSTI]

report on the device physics of nanostructured amorphous-silicon a-Si:H /polymer hybrid solar cells and nanostructured a-Si:H/polymer systems. We find that strong energy transfer occurs in the a-Si:H/MEH-PPV system. However, inefficient hole transfer from the a-Si:H to the polymers renders negligible photocurrent

McGehee, Michael

356

ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR CELLS  

E-Print Network [OSTI]

ATOMIC-LAYER-DEPOSITED ALUMINUM OXIDE FOR THE SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR to those measured on reference cells passivated by an aluminum-annealed thermal SiO2, while those of the Al of aluminum ox- ide (Al2O3) grown by atomic layer deposition (ALD) pro- vide an excellent level of sur

357

Definition: Solar cell | Open Energy Information  

Open Energy Info (EERE)

Solar cell Solar cell (Redirected from Definition:PV cell) Jump to: navigation, search Dictionary.png Solar cell Converts light into electrical energy. Traditional solar cells are made from silicon; second-generation solar cells (thin-film solar cells) are made from amorphous silicon or nonsilicon materials such as cadmium telluride; and third-generation solar cells are being made from variety of new materials, including solar inks, solar dyes, and conductive plastics.[1][2] View on Wikipedia Wikipedia Definition A solar cell (also called a photovoltaic cell) is an electrical device that converts the energy of light directly into electricity by the photovoltaic effect. It is a form of photoelectric cell (in that its electrical characteristics-e.g. current, voltage, or resistance-vary

358

Investigation of surface features for 17.2% efficiency multi-crystalline silicon solar cells  

Science Journals Connector (OSTI)

Abstract Maskless reactive ion etching (RIE) texturing using a gas mixture of sulfur hexafluorideoxygen (SF6/O2) and sulfur hexafluorideoxygenchlorine (SF6/O2/Cl2) was investigated to reveal the proper shape in surface features for higher efficiency multi-crystalline silicon (mc-Si) solar cells; hence, needle-like and round-top cone (RT cone) shapes were formed by RIE texturing with SF6/O2 gas, and pyramid and inverted pyramid shapes by RIE texturing with SF6/O2/Cl2 gas. RIE-textured mc-Si solar cells were fabricated on these surface features except for an inverted pyramid structure in the industrial production line. Performances of cells with RT cone and pyramid shapes were enhanced, whereas those with a needle-like cone were degraded, compared to the reference cells. Among these cells, those with RT cones represented the highest efficiency at 17.22%. By considering diode characteristics and electroluminescence images of fabricated solar cells, the proper shape for surface features was intimately related to control of the formation of a stable emitter layer as well as the reduction of surface reflectance.

Kwang Mook Park; Myoung Bok Lee; Sie Young Choi

2015-01-01T23:59:59.000Z

359

Optimization of the optical properties of nanostructured silicon surfaces for solar cell applications  

SciTech Connect (OSTI)

Surface nanostructuration is an important challenge for the optimization of light trapping in solar cell. We present simulations on both the optical properties and the efficiency of micro pillarsMPsor nanoconesNCssilicon based solar cells together with measurements on their associated optical absorption. We address the simulation using the Finite Difference Time Domain method, well-adapted to deal with a periodic set of nanostructures. We study the effect of the period, the bottom diameter, the top diameter, and the height of the MPs or NCs on the efficiency, assuming that one absorbed photon induces one exciton. This allows us to give a kind of abacus involving all the geometrical parameters of the nanostructured surface with regard to the efficiency of the associated solar cell. We also show that for a given ratio of the diameter over the period, the best efficiency is obtained for small diameters. For small lengths, MPs are extended to NCs by changing the angle between the bottom surface and the vertical face of the MPs. The best efficiency is obtained for an angle of the order of 70. Finally, nanostructures have been processed and allow comparing experimental results with simulations. In every case, a good agreement is found.

Zhou, Di; Pennec, Y.; Djafari-Rouhani, B.; Lambert, Y.; Deblock, Y.; Stivenard, D., E-mail: didier.stievenard@isen.fr [Institut d'Electronique et de Microlectronique et de Nanotechnologies, IEMN, (CNRS, UMR 8520), Groupe de Physique, Cit scientifique, avenue Poincar, 59652 Villeneuve d'Ascq (France); Cristini-Robbe, O. [PHLAM, UMR8523, Universit de Lille 1, 59652 Villeneuve d'Asq Cedex (France); Xu, T. [Key Laboratory of Advanced Display and System Application, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China); Faucher, M. [Institut d'Electronique et de Microlectronique et de Nanotechnologies, IEMN, (CNRS, UMR 8520), Groupe NAM6, Cit scientifique, avenue Poincar, 59652 Villeneuve d'Asq (France)

2014-04-07T23:59:59.000Z

360

Utilization of Direct and Diffuse Sunlight in a Dye-Sensitized Solar Cell Silicon Photovoltaic Hybrid Concentrator System  

Science Journals Connector (OSTI)

Nanocrystalline dye-sensitized solar cells (DSSCs) and organic photovoltaics (OPV) are two families of low-cost solar devices that absorb light in the visible part of the spectrum. ... del Cueto, J. A.Comparison of Energy Production and Performance from Flat-Plate Photovoltaic Module Technologies Deployed at Fixed Tilt. ... dye-sensitized solar cell as a top cell for high-energy photons, and a Cu In Ga selenide thin-film bottom cell for lower-energy photons, produces AM 1.5 solar to elec. ...

Greg D. Barber; Paul G. Hoertz; Seung-Hyun Anna Lee; Neal M. Abrams; Janine Mikulca; Thomas E. Mallouk; Paul Liska; Shaik M. Zakeeruddin; Michael Grtzel; Anita Ho-Baillie; Martin A. Green

2011-02-28T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Control of morphology for enhanced electronic transport in PECVD-grown a-Si : H Thin Films  

E-Print Network [OSTI]

Solar cells have become an increasingly viable alternative to traditional, pollution causing power generation methods. Although crystalline silicon (c-Si) modules make up most of the market, thin films such as hydrogenated ...

Castro Galnares, Sebastin

2010-01-01T23:59:59.000Z

362

SunShot Initiative: Thin Film Photovoltaics Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Thin Film Photovoltaics Research Thin Film Photovoltaics Research to someone by E-mail Share SunShot Initiative: Thin Film Photovoltaics Research on Facebook Tweet about SunShot Initiative: Thin Film Photovoltaics Research on Twitter Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Google Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Delicious Rank SunShot Initiative: Thin Film Photovoltaics Research on Digg Find More places to share SunShot Initiative: Thin Film Photovoltaics Research on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Thin Film Photovoltaics Research The U.S. Department of Energy (DOE) supports research and development of

363

An Unconventional Route to High-Efficiency Dye-Sensitized Solar Cells via Embedding Graphitic Thin Films into TiO2 Nanoparticle  

E-Print Network [OSTI]

and impedance spectroscopy. KEYWORDS: Carbon/TiO2 thin film, dye-sensitized solar cells, block copolymer-treated single-wall carbon nanotubes (a-SWCNs) in TiO2 film.37 The a-SWCNs modified solar cell indicated a 25An Unconventional Route to High-Efficiency Dye-Sensitized Solar Cells via Embedding Graphitic Thin

Lin, Zhiqun

364

Thermal Evaporation and Characterization of Sb2Se3 Thin Film for Substrate Sb2Se3/CdS Solar Cells  

Science Journals Connector (OSTI)

Thermal Evaporation and Characterization of Sb2Se3 Thin Film for Substrate Sb2Se3/CdS Solar Cells ... Here we report Sb2Se3 solar cells fabricated from thermal evaporation. ... Sb2Se3; thermal evaporation; thin film; solar cells ...

Xinsheng Liu; Jie Chen; Miao Luo; Meiying Leng; Zhe Xia; Ying Zhou; Sikai Qin; Ding-Jiang Xue; Lu Lv; Han Huang; Dongmei Niu; Jiang Tang

2014-06-12T23:59:59.000Z

365

Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems  

E-Print Network [OSTI]

21st European Photovoltaic Solar Energy Conference, Dresden,21st European Photovoltaic Solar Energy Conference, Dresden,International Energy Agency Photovoltaic Power System

Zhang, Teresa Weirui

2011-01-01T23:59:59.000Z

366

Controlling the Texture and Crystallinity of Evaporated Lead Phthalocyanine Thin Films for Near-Infrared Sensitive Solar Cells  

E-Print Network [OSTI]

Controlling the Texture and Crystallinity of Evaporated Lead Phthalocyanine Thin Films for Near-Infrared Sensitive Solar Cells Karolien Vasseur,, Katharina Broch,§ Alexander L. Ayzner, Barry P. Rand, David Cheyns: To achieve organic solar cells with a broadened spectral absorption, we aim to promote the growth of the near

Schreiber, Frank

367

Modeling of dual-metal Schottky contacts based silicon micro and nano wire solar cells  

Science Journals Connector (OSTI)

Abstract We study solar cell properties of single silicon wires connected at their ends to two dissimilar metals of different work functions. Effects of wire dimensions, the work functions of the metals, and minority carrier lifetimes on short circuit current as well as open circuit voltage are studied. The most efficient photovoltaic behavior is found to occur when one metal makes a Schottky contact with the wire, and the other makes an Ohmic contact. As wire length increases, both short circuit current and open circuit voltage increase before saturation occurs. Depending on the work function difference between the metals and the wire dimensions, the saturation length increases by approximately an order of magnitude with a two order magnitude increase in minority carrier length. However current per surface area exposed to light is found to decrease rapidly with increase in length. The use of a multi-contact interdigitated design for long wires is investigated to increase the photovoltaic response of the devices.

M. Golam Rabbani; Amit Verma; Michael M. Adachi; Jency P. Sundararajan; Mahmoud M. Khader; Reza Nekovei; M.P. Anantram

2014-01-01T23:59:59.000Z

368

High-performance hybrid organic-inorganic solar cell based on planar n-type silicon  

SciTech Connect (OSTI)

Hybrid organic-inorganic solar cells were fabricated by spin coating the hole transporting conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film on n-type crystalline silicon (n-Si). By incorporating different additives into the PEDOT:PSS, the conductivity and wettability of PEDOT:PSS film are markedly improved, and the device performance is greatly enhanced accordingly. To further optimize the device performance, poly(3-hexylthiophene) (P3HT) layer was inserted between the n-Si and PEDOT:PSS layer. The P3HT layer blocks electrons from diffusing to the PEDOT:PSS, and hence reduces recombination at the anode side. The device eventually exhibits a high power conversion efficiency of 11.52%.

Chi, Dan [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Qi, Boyuan; Wang, Jizheng [Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Qu, Shengchun, E-mail: qsc@semi.ac.cn; Wang, Zhanguo [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2014-05-12T23:59:59.000Z

369

Exciton splitting and carrier transport across the amorphous-silicon/polymer solar cell interface  

Science Journals Connector (OSTI)

The authors study exciton splitting at the interface of bilayer hybridsolar cells to better understand the physics controlling organic-inorganicdevice performance. Hydrogenated amorphous silicon ( a - Si : H ) ? poly ( 3 - hexylthiophene ) (P3HT) and a - Si : H ? poly ( 2 - methoxy - 5 - ( 2 ? - ethyl - hexyloxy ) - 1 4 - phenylenevinylene ) (MEH-PPV) solar cells show photoresponse dominated by exciton production in the polymer. The a - Si : H ? P 3 HT devices are nearly as efficient as titania/P3HT cells. However the a - Si : H ? MEH - PPV system has much lower photocurrent than a - Si : H ? P 3 HT likely due to inefficient hole transfer back to the MEH-PPV after energy transfer from MEH-PPV to a - Si : H .

Vignesh Gowrishankar; Shawn R. Scully; Michael D. McGehee; Qi Wang; Howard M. Branz

2006-01-01T23:59:59.000Z

370

Eighth workshop on crystalline silicon solar cell materials and processes: Extended abstracts and papers  

SciTech Connect (OSTI)

The theme of this workshop is Supporting the Transition to World Class Manufacturing. This workshop provides a forum for an informal exchange of information between researchers in the photovoltaic and non-photovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helps establish a knowledge base that can be used for improving device fabrication processes to enhance solar-cell performance and reduce cell costs. It also provides an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research. The workshop format features invited review presentations, panel discussions, and two poster sessions. The poster sessions create an opportunity for both university and industrial researchers to present their latest results and provide a natural forum for extended discussions and technical exchanges.

NONE

1998-08-01T23:59:59.000Z

371

Tenth Workshop on Crystalline Silicon Solar Cell Materials and Processes: A Summary of Discussion Sessions  

SciTech Connect (OSTI)

The 10th Workshop on Silicon Solar Cell Materials and Processes was held in Copper Mountain, Colorado, on August 13-16, 2000. The workshop was attended by 85 scientists and engineers from 15 international photovoltaic (PV) companies and 24 research institutions. Review and poster presentations were augmented by discussion sessions to address the recent progress and critical issues in meeting the goals for Si in the PV Industry Roadmap. The theme of the workshop was Si Photovoltaics: 10 Years of Progress and Opportunities for the Future. Two special sessions were held: Advanced Metallization and Interconnections - covering recent advances in solar cell metallization, printed contacts and interconnections, and addressing new metallization schemes for low-cost cell interconnections; and Characterization Methods - addressing the growing need for process monitoring techniques in the PV industry. The following major issues emerged from the discussion sessions: (1) Mechanical breakage in the P V industry involves a large fraction, about 5%-10%, of the wafers. (2) The current use of Al screen-printed back-contacts appears to be incompatible with the PV Industry Roadmap requirements. (3) The PV manufacturers who use hydrogen passivation should incorporate the plasma-enhanced chemical vapor deposited (PECVD) nitride for antireflection coating and hydrogenation. (4) There is an imminent need to dissolve metallic precipitates to minimize the electrical shunt problem caused by the ''bad'' regions in wafers. (5) Industry needs equipment for automated, in-line monitoring and testing. There are simply not many tools available to industry. (6) In the Wrap-Up Session of the workshop, there was consensus to create four industry/university teams that would address critical research topics in crystalline silicon. (7) The workshop attendees unanimously agreed that the workshop has served well the PV community by promoting the fundamental understanding of industrial processes, forecasting critical issues and research areas, and promoting a climate of openness to facilitate growth of the industry.

Tan, T.; Swanson, D.; Sinton, R.; Sopori, B.

2001-01-22T23:59:59.000Z

372

High-Mobility Thin-Film Transistor Fabricated Using Hydrogenated Amorphous Silicon Deposited by Discharge of Disilane  

Science Journals Connector (OSTI)

Plasma-enhanced chemical vapor deposition of hydrogenated amorphous silicon (a-Si:H) film was investigated with emphasis on the effect of disilane flow rate. A coplanar thin-film transistor (TFT) was fabricated using this a-Si:H film. Silicon-hydrogen bond content in the a-Si:H film was measured by infrared absorption spectroscopy. With decrease in the disilane flow rate from 3.0 cm3/min to 1.5 cm3/min, the maximum field-effect electron mobility ( FE) of the TFT which depends on the gate voltage increased from 3.3 cm2/( Vs) to 4.9 cm2/( Vs), accompanied by a reduction in the silicon-hydrogen bond content. There was a negative correlation between FE and the silicon-hydrogen bond content in the a-Si:H film. The improvement mechanism of FE was discussed in terms of the chemical structure of the a-Si:H film.

Shigeichi Yamamoto; Junji Nakamura; Masatoshi Migitaka

1996-01-01T23:59:59.000Z

373

Simultaneous P and B diffusion, in-situ surface passivation, impurity filtering and gettering for high-efficiency silicon solar cells  

SciTech Connect (OSTI)

A technique is presented to simultaneously diffuse boron and phosphorus in silicon, and grow an in-situ passivating oxide in a single furnace step. It is shown that limited solid doping sources made from P and B Spin-On Dopant (SOD) films can produce optimal n{sup +} and p{sup +} profiles simultaneously without the deleterious effects of cross doping. A high quality passivating oxide is grown in-situ beneath the thin ({approximately} 60 {angstrom}) diffusion glass, resulting in low J{sub o} values below 100 fA/cm{sup 2} for transparent ({approximately} 100 {Omega}/{open_square}) phosphorus and boron diffusions. For the first time it is shown that impurities present in the boron SOD film can be effectively filtered out by employing separate source wafers, resulting in bulk lifetimes in excess of 1 ms for the sample wafers. The degree of lifetime degradation in the sources is related to the gettering efficiency of boron in silicon. This novel simultaneous diffusion, in-situ oxidation, impurity filtering and gettering technique was successfully used to produce 20.3% Fz, and 19.1% Cz solar cells, in one furnace step.

Krygowski, T.; Rohatgi, A. [Georgia Inst. of Tech., Atlanta, GA (United States); Ruby, D. [Sandia National Labs., Albuquerque, NM (United States)

1997-11-01T23:59:59.000Z

374

Solar Cells, 14 (1985) 289 -291 289 Short Communication  

E-Print Network [OSTI]

for CdS/CuInSe2 thin film solar cells by electron beam assisted chemical vapor deposition B. J. STANBERYSolar Cells, 14 (1985) 289 - 291 289 Short Communication Silicon nitride anti-reflection coatings; accepted January 2, 1985) The electron beam assisted chemical vapor deposition of silicon nitride anti

Rocca, Jorge J.

375

Low-temperature solid-phase crystallization of amorphous silicon thin films deposited by rf magnetron sputtering with substrate bias  

SciTech Connect (OSTI)

The crystallization properties of amorphous silicon (a-Si) thin film deposited by rf magnetron sputter deposition with substrate bias have been thoroughly characterized. The crystallization kinetics for films deposited with substrate bias is enhanced relative to unbiased a-Si by films. The enhanced crystallization for substrate biased a-Si films are attributed to ion enhanced nucleation of crystallites during sputter deposition which subsequently grow during the postdeposition anneal. Conversely films sputter deposited without substrate bias have more intrinsic defects and residual oxygen which enhance nucleation and retard growth, respectively, and lead to a large number of small crystallites.

Jun, Seung-Ik; Rack, Philip D.; McKnight, Timothy E.; Melechko, Anatoli V.; Simpson, Michael L. [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996-2200 (United States); Molecular Scale Engineering and Nanoscale Technologies Research Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

2006-07-10T23:59:59.000Z

376

Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication  

SciTech Connect (OSTI)

The effect that direct current (dc) substrate bias has on radio frequency-sputter-deposited amorphous silicon (a-Si) films has been investigated. The substrate bias produces a denser a-Si film with fewer defects compared to unbiased films. The reduced number of defects results in a higher resistivity because defect-mediated conduction paths are reduced. Thin film transistors (TFTs) that were completely sputter deposited were fabricated and characterized. The TFT with the biased a-Si film showed lower leakage (off-state) current, higher on/off current ratio, and higher transconductance (field effect mobility) than the TFT with the unbiased a-Si film.

Jun, Seung-Ik; Rack, Philip D.; McKnight, Timothy E.; Melechko, Anatoli V.; Simpson, Michael L. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996-2200 (United States); Molecular Scale Engineering and Nanoscale Technologies Research Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

2005-09-26T23:59:59.000Z

377

Growth direction of oblique angle electron beam deposited silicon monoxide thin films identified by optical second-harmonic generation  

SciTech Connect (OSTI)

Oblique angle deposited (OAD) silicon monoxide (SiO) thin films forming tilted columnar structures have been characterized by second-harmonic generation. It was found that OAD SiO leads to a rotationally anisotropic second-harmonic response, depending on the optical angle of incidence. A model for the observed dependence of the second-harmonic signal on optical angle of incidence allows extraction of the growth direction of OAD films. The optically determined growth directions show convincing agreement with cross-sectional scanning electron microscopy images. In addition to a powerful characterization tool, these results demonstrate the possibilities for designing nonlinear optical devices through SiO OAD.

Vejling Andersen, Sren; Lund Trolle, Mads; Pedersen, Kjeld [Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, DK-9220 Aalborg st (Denmark)] [Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, DK-9220 Aalborg st (Denmark)

2013-12-02T23:59:59.000Z

378

12th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Summary Discussion Sessions  

SciTech Connect (OSTI)

This report is a summary of the discussion sessions of the 12th Workshop on Crystalline Silicon Solar Cells and Processes. The theme of the workshop was"Fundamental R&D in c-Si: Enabling Progress in Solar-Electric Technology." This theme was chosen to reflect a concern that the current expansion in the PV energy production may redirect basic research efforts to production-oriented issues. The PV industry is installing added production capacity and new production lines that include the latest technologies. Once the technologies are selected, it is difficult to make changes. Consequently, a large expansion can stagnate the technologies and diminish interest in fundamental research. To prevent the fundamental R&D program from being overwhelmed by the desire to address immediate engineering issues, there is a need to establish topics of fundamental nature that can be pursued by the universities and the research institutions. Hence, one of the objectives of the workshop was to identify such areas for fundamental research.

Sopori, B.; Swanson, D.; Sinton, R.; Tan, T.

2003-02-01T23:59:59.000Z

379

Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells  

E-Print Network [OSTI]

1 Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells, Setagaya-ku, Tokyo 157-8572, Japan (Received ) KEYWORDS: ZnS buffer, Cu(In,Ga)Se2, thin-film solar cells alternative to CdS in polycrystalline thin-film Cu(In1-xGax)Se2 (CIGS) solar cells. Cells with efficiency

Sites, James R.

380

Thin Film Solar Cells Derived from Sintered Semiconductor Quantum Dots: Cooperative Research and Development Final Report, CRADA number CRD-07-00226  

SciTech Connect (OSTI)

The NREL/Evident team will develop techniques to fabricate thin film solar cells where the absorption layers comprising the solar cells are derived from sintered semiconductor quantum dots.

Ginley, D. S.

2010-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Edge photoluminescence of single-crystal silicon with a p-n junction: Structures produced by high-efficiency solar cell technology  

Science Journals Connector (OSTI)

The systematic features and kinetics of edge photoluminescence of silicon structures produced by the high-efficiency solar cell technology is studied at different voltages applied to...p-n junction. It is shown t...

A. M. Emelyanov

2011-06-01T23:59:59.000Z

382

Silicon materials task of the low cost solar array project (Phase III). Effect of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 1: characterization methods for impurities in silicon and impurity effects data base  

SciTech Connect (OSTI)

The object of Phase III of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells. The study encompassed a variety of tasks including: (1) a detailed examination of thermal processing effects, such as HCl and POCl/sub 3/ gettering on impurity behavior, (2) completion of the data base and modeling for impurities in n-base silicon, (3) extension of the data base on p-type material to include elements likely to be introduced during the production, refining, or crystal growth of silicon, (4) effects on cell performance on anisotropic impurity distributions in large CZ crystals and silicon webs, and (5) a preliminary assessment of the permanence of the impurity effects. Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. For example, discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, and conventional solar cell I-V techniques, as well as descriptions of silicon chemical analysis are included. Considerable data are tabulated on the composition, electrical, and solar cell characteristics of impurity-doped silicon.

Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

1980-01-01T23:59:59.000Z

383

Influence of thin metal as a top electrode on the characteristics of P?I?N a? Si:H solar cells  

Science Journals Connector (OSTI)

Hydrogenated amorphous silicon (a?Si:H) p?n junction solar cells have been fabricated which utilize various metals (Cr Cu Al Pd Ag) as a top electrode. Experimental and theoretical analysis of photovolatic performance in a?Si:H solar cells as a function of resistivity optical transmittance and work function of thin metal films are presented. Metal work function changes the effective built?in potential of p?n junction diodes. Furthermore a lower work function metal forms a good Ohmic contact for substrate P +?I?N + electrode cells and high work function metals improve V oc of substrate ?N?I?P cells. Typical V o c values are 760 mV with Cr Cu and AlN?I?Pstainless steel (SS) 700 mV with PdN?I?P?SS 600 mV with PdP?I?N?SS and 540 mV with CrP?I?N?SS. J sc is strongly dependent on transmittance and resistivity of the metal films. Fill factor is independent of the choice of a top electrode. An efficient of 2% has been obtained on a 2 cm2solar cell.

Min?Koo Han; Wayne A. Anderson; R. Lahri; John Coleman

1981-01-01T23:59:59.000Z

384

Theoretical study of the efficiency of CdS/PbS thin film solar cells  

Science Journals Connector (OSTI)

Abstract This work represents a theoretical analysis of a new type of thin film solar cells with structure glass/ITO/CdS/PbS/AL. The transmission spectrum was calculated based on the multi-reflections effect from all cell layers as well as absorption effect in both ITO and CdS layers. The calculations of spectral internal quantum efficiency were carried out based on the front and back surface recombination of PbS layer. The recombination losses in space-charge region were studied. The effect of thickness of the absorber layer on the calculations of short-circuit current density was studied under illumination condition of AM1.5 solar irradiation. The data of open circuit voltage, maximum voltage, maximum current density, fill factor, output power density and efficiency of CdS/PbS solar cell were estimated from the JV characteristics curve under illumination effect. This study ignored the effect of metallic back contact and thus the incomplete absorption losses (transmission losses) take place at thin absorber layer. The obtained results showed that the 2?m thickness of the absorber layer is not sufficient to absorb all the transmitted photons from the window layer (CdS) and the selection of theses thin thicknesses of PbS in order to correspond with experimental implementations of these devices. Both the optical and recombination losses lead to decrease the current density by 82% (JSC=7.28mA/cm2) at thickness 0.5?m of PbS and these losses decreased to 67% (JSC=16mA/cm2) at thickness 2?m. The output power density and the cell efficiency increased with increasing the thickness of effective layer. The maximum cell efficiency of 4.13% was obtained at thickness of 2?m which is considered greater than those obtained experimentally.

H.A. Mohamed

2014-01-01T23:59:59.000Z

385

Simulations of solar cell absorption enhancement using resonant modes of a nanosphere array  

E-Print Network [OSTI]

Simulations of solar cell absorption enhancement using resonant modes of a nanosphere array an approach for enhancing the absorption of thin-film amorphous silicon solar cells using periodic on the temporal coupled mode theory. Keywords: Resonant Dielectric Structures, Solar cells, Nanospheres

Grandidier, Jonathan

386

Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence  

SciTech Connect (OSTI)

It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, inline tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

2011-01-01T23:59:59.000Z

387

Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint  

SciTech Connect (OSTI)

It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

2011-07-01T23:59:59.000Z

388

CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments  

Office of Scientific and Technical Information (OSTI)

National Renewable Energy Laboratory National Renewable Energy Laboratory Innovation for Our Energy Future A national laboratory of the U.S. Department of Energy Office of Energy Efficiency & Renewable Energy NREL is operated by Midwest Research Institute ● Battelle Contract No. DE-AC36-99-GO10337 Conference Paper NREL/CP-520-37020 January 2005 CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments K. Ramanathan, R.N. Bhattacharya, M.A. Contreras, F.S. Hasoon, J. Abushama, and R. Noufi Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting October 25-28, 2004 Denver, Colorado NOTICE The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under Contract No. DE-AC36-99GO10337. Accordingly, the US

389

On the feasibility of colored glazed thermal solar collectors based on thin film interference filters  

Science Journals Connector (OSTI)

Glazed thermal solar collectors, typically equipped with black, optical selective absorber sheets, exhibit good energy conversion efficiency. However, the black color, and sometimes the visibility of tubes and corrugations of the metal sheets, limit the architectural integration into buildings. In order to overcome this drawback, interference filters are considered as a promising approach. Multilayered thin film stacks deposited on the cover glass can produce a colored reflection hiding the black absorber without a great loss of energy. These interference filters are designed and optimized by numerical simulation. Such coatings are deposited by vacuum processes (e.g. magnetron sputtering) and also via the SolGel method. Optical measurements, such as real-time laser-reflectometry and spectrophotometry, are suitable to determine film thicknesses and optical constants of individual layers, and to measure color coordinates and solar transmittance for the multilayer stacks. Advantages and disadvantages of the different coating processes are discussed.

A. Schler; C. Roecker; J.-L. Scartezzini; J. Boudaden; I.R. Videnovic; R.S.-C. Ho; P. Oelhafen

2004-01-01T23:59:59.000Z

390

Spatially resolved determination of the short-circuit current density of silicon solar cells via lock-in thermography  

SciTech Connect (OSTI)

We present a spatially resolved method to determine the short-circuit current density of crystalline silicon solar cells by means of lock-in thermography. The method utilizes the property of crystalline silicon solar cells that the short-circuit current does not differ significantly from the illuminated current under moderate reverse bias. Since lock-in thermography images locally dissipated power density, this information is exploited to extract values of spatially resolved current density under short-circuit conditions. In order to obtain an accurate result, one or two illuminated lock-in thermography images and one dark lock-in thermography image need to be recorded. The method can be simplified in a way that only one image is required to generate a meaningful short-circuit current density map. The proposed method is theoretically motivated, and experimentally validated for monochromatic illumination in comparison to the reference method of light-beam induced current.

Fertig, Fabian, E-mail: fabian.fertig@ise.fraunhofer.de; Greulich, Johannes; Rein, Stefan [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, D-79110 Freiburg (Germany)

2014-05-19T23:59:59.000Z

391

High performance hydrogenated amorphous silicon solar cells made at a high deposition rate by glow discharge of disilane  

SciTech Connect (OSTI)

The deposition rate, electronic and optical properties of hydrogenated amorphous silicon films prepared from rf glow discharge decomposition of disilane (Si/sub 2/H/sub 6/) diluted in helium have been measured. These films show excellent electrical and optical properties and, most importantly, a high deposition rate coupled with satisfactory solar cell application was realized for the first time. At a deposition rate of 11 A/s, 5.47% and 6.5% conversion efficiencies were obtained with a first trial of n-i-p type solar cells deposited on SnO/sub 2//ITO glass and metal substrates, respectively.

Ohashi, Y.; Kenne, J.; Konagai, M.; Takahashi, K.

1983-06-15T23:59:59.000Z

392

Generation of low work function, stable compound thin films by laser ablation  

DOE Patents [OSTI]

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

2001-01-01T23:59:59.000Z

393

Industrial high performance crystalline silicon solar cells and modules based on rear surface passivation technology  

Science Journals Connector (OSTI)

Abstract Stimulated by the extreme market conditions, the increase in performance and the reduction of manufacturing costs of standard crystalline silicon solar cells and modules have been quite significant in the last years. This progress was achieved mainly by process and material improvements avoiding additional process complexity. As todays cells are predominantly limited by optical and recombination losses at the rear surface, dielectric rear surface passivation represents an obvious approach to overcome the limitations. In recent years several concepts have been developed to implement dielectric rear side passivation into industrial-scale mass production. In this paper a short review is given about the evolution of dielectric rear side passivation technologies as well as on state-of-the-art cell and module results. Simple and cost effective cell and module designs utilizing standard as well as innovative manufacturing technologies are presented. Furthermore, it is shown that for all major steps multiple process options are available to further reduce the manufacturing costs. Using an optimized emitter and screen-printed metallization on commercially available 156mm156mm p-type Czochralski-grown crystalline silicon wafers best cell efficiencies of 19.9% without dielectric rear surface passivation and 21.0% with dielectric rear surface passivation are demonstrated. Replacing the screen-printed front contacts by electroplated nickelcopper contacts record efficiencies of up to 21.3% are reached. By optimizing the module design and materials to reduce the resistive and optical losses, a peak module power of up to 306W and 19.5% aperture area efficiency are achieved.

Axel Metz; Dennis Adler; Stefan Bagus; Henry Blanke; Michael Bothar; Eva Brouwer; Stefan Dauwe; Katharina Dressler; Raimund Droessler; Tobias Droste; Markus Fiedler; Yvonne Gassenbauer; Thorsten Grahl; Norman Hermert; Wojtek Kuzminski; Agata Lachowicz; Thomas Lauinger; Norbert Lenck; Mihail Manole; Marcel Martini; Rudi Messmer; Christine Meyer; Jens Moschner; Klaus Ramspeck; Peter Roth; Ruben Schnfelder; Berthold Schum; Jrg Sticksel; Knut Vaas; Michael Volk; Klaus Wangemann

2014-01-01T23:59:59.000Z

394

Well-Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells: Preprint  

SciTech Connect (OSTI)

We have developed hydrogenated amorphous silicon (a Si:H) back contacts to both p- and n-type silicon wafers, and employed them in double-heterojunction solar cells. These contacts are deposited entirely at low temperature (<250 C) and replace the standard diffused or alloyed back-surface-field contacts used in single-heterojunction (front-emitter only) cells. High-quality back contacts require excellent surface passivation, indicated by a low surface recombination velocity of minority-carriers (S) or a high open-circuit voltage (Voc). The back contact must also provide good conduction for majority carriers to the external circuit, as indicated by a high light I-V fill factor. We use hot-wire chemical vapor deposition (HWCVD) to grow a-Si:H layers for both the front emitters and back contacts. Our improved a-Si:H back contacts contribute to our recent achievement of a confirmed 18.2% efficiency in double-heterojunction silicon solar cells on p type textured silicon wafers.

Page, M. R.; Iwaniczko, E.; Xu, Y.; Wang, Q.; Yan, Y.; Roybal, L.; Branz, H. M.; Wang, T. H.

2006-05-01T23:59:59.000Z

395

Broadband antireflection and absorption enhancement of ultrathin silicon solar microcells enabled with density-graded surface nanostructures  

SciTech Connect (OSTI)

Density-graded surface nanostructures are implemented on ultrathin silicon solar microcells by silver-nanoparticle-catalyzed wet chemical etching to enable near-zero surface reflection over a broad wavelength range of incident solar spectrum as well as non-zeroth order diffraction and light trapping for longer wavelength photons, thereby achieving augmented photon absorption for ultrathin silicon microcells in a simple, cost-effective manner. The increase of absorbed photon flux through the black silicon (b-Si) surface translates directly into the corresponding enhancement of photovoltaic performance, where 5.7-?m b-Si microcells with the rational design of device configuration exhibit improved energy conversion efficiency by 148% and 50% with and without a diffuse backside reflector, respectively, compared to devices from the bare silicon without b-Si implementation. Systematic studies on nanostructured morphology, optical and electrical properties of b-Si microcells, together with semi-empirical numerical modeling of photon absorption, provide key aspects of underlying materials science and physics.

Chan, Lesley; Kang, Dongseok; Lee, Sung-Min; Li, Weigu; Hunter, Hajirah [Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089 (United States); Yoon, Jongseung, E-mail: js.yoon@usc.edu [Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089 (United States); Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089 (United States)

2014-06-02T23:59:59.000Z

396

Experimental Investigation of Size Effects on the Thermal Conductivity of Silicon-Germanium Alloy Thin Films  

E-Print Network [OSTI]

We experimentally investigate the role of size effects and boundary scattering on the thermal conductivity of silicon-germanium alloys. The thermal conductivities of a series of epitaxially grown Si[subscript 1-x] Ge[subscript ...

Cheaito, Ramez

397

Elasto-viscoplastic wave propagation in single crystallographic silicon thin structure  

E-Print Network [OSTI]

possible errors introduced by thickness variation. The study established the basic framework for LISWT to be applicable to silicon wafer RTP at elevated temperatures. The model and methods developed for the course of the research can be easily adapted...

Liu, Li

2006-08-16T23:59:59.000Z

398

Definition: Solar cell | Open Energy Information  

Open Energy Info (EERE)

cell cell Jump to: navigation, search Dictionary.png Solar cell Converts light into electrical energy. Traditional solar cells are made from silicon; second-generation solar cells (thin-film solar cells) are made from amorphous silicon or nonsilicon materials such as cadmium telluride; and third-generation solar cells are being made from variety of new materials, including solar inks, solar dyes, and conductive plastics.[1][2] View on Wikipedia Wikipedia Definition A solar cell (also called a photovoltaic cell) is an electrical device that converts the energy of light directly into electricity by the photovoltaic effect. It is a form of photoelectric cell (in that its electrical characteristics-e.g. current, voltage, or resistance-vary when light is incident upon it) which, when exposed to light, can generate

399

Optical and recombination losses in thin-film Cu(In,Ga)Se2 solar cells  

Science Journals Connector (OSTI)

Abstract Optical and recombination losses in thin-film solar cells based on CuInxGa1-xSe2 with the bandgaps 1.141.16 and 1.361.38eV have been evaluated. Parameters used for the analysis and calculations were verified by comparing the measured quantum efficiency spectra with the results of calculations. Optical losses due to reflections from the interfaces and absorption in the ZnO and CdS layers are found using the optical constants of materials taking into account anti-reflection coating on the ZnO surface. It is shown that for typical parameters of solar cells studied the optical losses amount to 1618%. Losses due to the recombination of charge carriers at the front and back surfaces of the absorbing layer and in the space charge region (SCR) are calculated based on their dependences on the carrier lifetime, the concentration of uncompensated acceptors (determined the width of the SCR) and other parameters of the absorber. Total recombination losses in solar cells with the bandgaps of CuIn(Ga,In)Se2 1.14 and 1.36eV are equal to 7.0% and 4.5%, respectively. It is also shown that for solar cell with the bandgap of absorber 1.14eV, an incomplete charge collection is caused also due to non-optimal width of the SCR. An improvement of charge collection in this cell can be achieved by varying the concentration of uncompensated acceptors in the absorber. However, it is impossible to achieve such improvement for solar cells with the bandgap of 1.36eV due to shorter carrier lifetime in the material.

L.A. Kosyachenko; X. Mathew; P.D. Paulson; V.Ya. Lytvynenko; O.L. Maslyanchuk

2014-01-01T23:59:59.000Z

400

Crystal Silicon Heterojunction Solar Cells by Hot-Wire CVD: Preprint  

SciTech Connect (OSTI)

Hot-wire chemical vapor deposition (HWCVD) is a promising technique for fabricating Silicon heterojunction (SHJ) solar cells. In this paper we describe our efforts to increase the open circuit voltage (Voc) while improving the efficiency of these devices. On p-type c-Si float-zone wafers, we used a double heterojunction structure with an amorphous n/i contact to the top surface and an i/p contact to the back surface to obtain an open circuit voltage (Voc) of 679 mV in a 0.9 cm2 cell with an independently confirmed efficiency of 19.1%. This is the best reported performance for a cell of this configuration. We also made progress on p-type CZ wafers and achieved 18.7% independently confirmed efficiency with little degradation under prolong illumination. Our best Voc for a p-type SHJ cell is 0.688 V, which is close to the 691 mV we achieved for SHJ cells on n type c-Si wafers.

Wang, Q.; Page, M. R.; Iwaniczko, E.; Xu, Y. Q.; Roybal, L.; Bauer, R.; To, B.; Yuan, H. C.; Duda, A.; Yan, Y. F.

2008-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Optimization of textured-dielectric coatings for crystalline-silicon solar cells  

SciTech Connect (OSTI)

The authors report on the optimization of textured-dielectric coatings for reflectance control in crystalline-silicon (c-Si) photovoltaic modules. Textured-dielectric coatings reduce encapsulated-cell reflectance by promoting optical confinement in the module encapsulation; i.e., the textured-dielectric coating randomizes the direction of rays reflected from the dielectric and from the c-Si cell so that many of these reflected rays experience total internal reflection at the glass-air interface. Some important results of this work include the following: the authors demonstrated textured-dielectric coatings (ZnO) deposited by a high-throughput low-cost deposition process; they identified factors important for achieving necessary texture dimensions; they achieved solar-weighted extrinsic reflectances as low as 6% for encapsulated c-Si wafers with optimized textured-ZnO coatings; and they demonstrated improvements in encapsulated cell performance of up to 0.5% absolute compared to encapsulated planar cells with single-layer antireflection coatings.

Gee, J.M. [Sandia National Labs., Albuquerque, NM (United States). Photovoltaic System Components Dept.; Gordon, R.; Liang, H. [Harvard Univ., Cambridge, MA (United States). Dept. of Chemistry

1996-07-01T23:59:59.000Z

402

Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint  

SciTech Connect (OSTI)

We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

2012-06-01T23:59:59.000Z

403

QUANTIFICATION OF LOSSES IN THIN-FILM CdS/CdTe SOLAR CELLS S.H. Demtsu and J.R. Sites  

E-Print Network [OSTI]

QUANTIFICATION OF LOSSES IN THIN-FILM CdS/CdTe SOLAR CELLS S.H. Demtsu and J.R. Sites Department of Physics, Colorado State University, Fort Collins, CO 80523, USA ABSTRACT Quantification of solar cell Thin-film CdS/CdTe devices have been studied extensively, but some basic underlying properties

Sites, James R.

404

Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics  

E-Print Network [OSTI]

solid state battery ..of the thin-film solid state battery is shown in Fig. 13.the thin-film solid state battery. CHAPTER FIVE Performance

Kang, Jin Sung

2012-01-01T23:59:59.000Z

405

Solar cell array interconnects  

DOE Patents [OSTI]

Electrical interconnects are disclosed for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value. 4 figs.

Carey, P.G.; Thompson, J.B.; Colella, N.J.; Williams, K.A.

1995-11-14T23:59:59.000Z

406

Nanostructure formation in the initial roughening of a thin silicon sheet S. Seo, C. Euaruksakul, D. E. Savage, M. G. Lagally, and P. G. Evans*  

E-Print Network [OSTI]

Nanostructure formation in the initial roughening of a thin silicon sheet S. Seo, C. Euaruksakul, D between stress-induced roughening and the elastic interaction between steps. SOI allows the precisely free energy. The roughening of planar surfaces and interfaces, for example, can be understood using

Evans, Paul G.

407

Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Final technical report  

SciTech Connect (OSTI)

Transparent conducting fluorine doped zinc oxide was deposited as thin films on soda lime glass substrates by atmospheric pressure chemical vapor deposition (CVD) at substrate temperatures of 460 to 500 degrees C. The precursors diethylzinc, tetramethylethylenediamine and benzoyl fluoride were dissolved in xylene. This solution was nebulized ultrasonically and then flash vaporized by a carrier gas of nitrogen preheated to 150 degrees C. Ethanol was vaporized separately, and these vapors were then mixed to form a homogeneous vapor mixture. Good reproducibility was achieved using this new CVD method. Uniform thicknesses were obtained by moving the heated glass substrates through the deposition zone. The best electrically and optical properties were obtained when the precursor solution was aged for more than a week before use. The films were polycrystalline and highly oriented with the c-axis perpendicular to the substrate. More than 90% of the incorporated fluorine atoms were electrically active as n-type dopants. The electrical resistivity of the films was as low as 5 x 10/sup -4/ Omega cm. The mobility was about 45 cm /Vs. The electron concentration was up to 3 x 10 %sup20;/cm. The optical absorption of the films was about 3-4% at a sheet resistance of 7 ohms/square. The diffuse transmittance was about 10% at a wavelength of 650 nm. Amorphous ilicon solar cells were deposited using the textured fluorine doped zinc oxide films as a front electrode. The short circuit current was increased over similar cells made with fluorine doped tin oxide, but the open circuit voltages and fill factors were reduced. The voltage was restored by overcoating the fluorine-doped zinc oxide with a thin layer of fluorine-doped tin oxide.

Gordon, R.G.; Kramer, K.; Liang, H.; Liu, X.; Pang, D.; Teff, D.

1998-09-01T23:59:59.000Z

408

Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces  

DOE Patents [OSTI]

A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

2014-09-09T23:59:59.000Z

409

Structural changes during the reaction of Ni thin films with (100) silicon substrates  

E-Print Network [OSTI]

thin transition metal silicide ?lms due to their ability tothe metal ?lm and the Ni concentration at the oxide/silicidemetal can di?use to the SiO 2 /Si interface and from silicide

Thron, Andrew M.; Greene, Peter K.; Liu, Kai; van Benthem, Klaus

2012-01-01T23:59:59.000Z

410

Optically optimal wavelength-scale patterned ITO/ZnO composite coatings for thin film solar cells  

E-Print Network [OSTI]

A new methodology is proposed for finding structures that are, optically speaking, locally optimal : a physical analysis of much simpler structures is used to constrain the optimization process. The obtained designs are based on a flat amorphous silicon layer (to minimize recombination) with a patterned anti-reflective coating made of ITO or ZnO, or a composite ITO/ZnO coating. These latter structures are realistic and present good performances despite very thin active layers.

Moreau, Antoine; Centeno, Emmanuel; Seassal, Christian

2012-01-01T23:59:59.000Z

411

Realization of a near-perfect antireflection coating for silicon solar energy utilization  

Science Journals Connector (OSTI)

To harness the full spectrum of solar energy, Fresnel reflection at the surface of a solar cell must be eliminated over the entire solar spectrum and at all angles. Here, we show...

Kuo, Mei-Ling; Poxson, David J; Kim, Yong Sung; Mont, Frank W; Kim, Jong Kyu; Schubert, E Fred; Lin, Shawn-Yu

2008-01-01T23:59:59.000Z

412

DEVELOPMENT OF A NOVEL PRECURSOR FOR THE PREPARATION BY SELENIZATION OF HIGH EFFICIENCY CuInGaSe2/CdS THIN FILM SOLAR CELLS  

E-Print Network [OSTI]

/CdS THIN FILM SOLAR CELLS N. Romeo1 , A. Bosio1 , V. Canevari2 , R. Tedeschi1 , S. Sivelli1 , A. Solar cells prepared by depositing in sequence on top of the CuInGaSe2 film 60 nm of CdS, 100 nm of pure(InGa)Se2, Thin Films, Selenization 1 INTRODUCTION CuInGaSe2 based solar cells exhibit the highest

Romeo, Alessandro

413

NREL: Photovoltaics Research - Thin Film Photovoltaic Partnership Project  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed the United States to attain world leadership in this area of solar technology. Three national R&D teams focused on thin-film semiconductor materials: amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS) and its alloys. The Module Reliability Team and Environmental Health and Safety Team were crosscutting. The teams comprised researchers from the solar industry, academia, and NREL who focused their efforts on improving materials, devices, and manufacturing processes-all

414

Experimental results with cryogenically cooled, thin, silicon crystal x-ray monochromators on high-heat-flux beamlines  

SciTech Connect (OSTI)

A novel, silicon crystal monochromator has been designed and tested for use on undulator and focused wiggler beamlines at third-generation synchrotron sources. The crystal utilizes a thin, partially transmitting diffracting element fabricated within a liquid-nitrogen cooled, monolithic block of silicon. This report summarizes the results from performance tests conducted at the European Synchrotron Radiation Facility (ESRF) using a focused wiggler beam and at the Advanced Photon Source (APS) on an undulator beamline. These experiments indicate that a cryogenic crystal can handle the very high power and power density x-ray beams of modem synchrotrons with sub-arcsec thermal broadening of the rocking curve. The peak power density absorbed on the surface of the crystal at the ESRF exceeded go W/mm{sup 2} with an absorbed power of 166 W, this takes into account the spreading of the beam due to the Bragg angle of 11.4{degrees}. At the APS, the peak heat flux incident on the crystal was 1.5 W/mA/mm{sup 2} with a power of 6.1 W/mA for a 2.0 H x 2.5 V mm{sup 2} beam at an undulator gap of 11.1 mm and stored current up to 96 mA.

Rogers, C.S.; Mills, D.M.; Lee, W.K.; Fernandez, P.B.; Graber, T.

1996-08-01T23:59:59.000Z

415

Single pulse excimer laser nanostructuring of thin silicon films: Nanosharp cones formation and a heat transfer problem  

SciTech Connect (OSTI)

We present analytical and computer modeling along with an experiment on the formation of sharp conical tips on monocrystalline silicon thin films, silicon-on-insulator, subjected to irradiation by single 25 ns pulses from a KrF excimer laser focused into a spot several micrometers in diameter. These fabricated structures have heights of about 1 {mu}m and apical radii of curvature of several tens of nanometers. We offer a simplified analytical model for the formation of these structures. The computer simulation includes two-dimensional time-dependant heat transfer and phase transformations in Si films on SiO{sub 2} substrates that result from the laser irradiation (the Stefan problem). It is shown that upon irradiation and initial melting, the liquid/solid interface remains mainly parallel to the surface of the film. After the laser pulse, the molten material self-cools and resolidifies. The solid/liquid interface moves predominately laterally toward the center of the irradiated spot, forming an almost vertical front. We discuss the relation between the dynamics of the melting/freezing front movement and the displacement of material in the irradiated spot.

Eizenkop, Julia; Avrutsky, Ivan; Auner, Gregory; Georgiev, Daniel G.; Chaudhary, Vipin [Department of Electrical and Computer Engineering, Wayne State University, Detroit, Michigan 48202 (United States); Department of Electrical Engineering and Computer Science, University of Toledo, Toledo, Ohio 43606-3390 (United States); Department of Computer Science and Engineering, The State University of New York, Buffalo, New York 14260 (United States)

2007-05-01T23:59:59.000Z

416

Indium doped zinc oxide nanowire thin films for antireflection and solar absorber coating applications  

SciTech Connect (OSTI)

Indium doped ZnO nanowire thin films were prepared by thermal oxidation of Zn-In metal bilayer films at 500C. The ZnO:In nanowires are 20-100 nm in diameter and several tens of microns long. X-ray diffraction patterns confirm the formation of oxide and indicate that the films are polycrystalline, both in the as deposited and annealed states. The transmission which is <2% for the as deposited Zn-In films increases to >90% for the ZnO:In nanowire films. Significantly, the reflectance for the as deposited films is < 10% in the region between 200 to 1500 nm and < 2% for the nanowire films. Thus, the as deposited films can be used solar absorber coatings while the nanowire films are useful for antireflection applications. The growth of nanowires by this technique is attractive since it does not involve very high temperatures and the use of catalysts.

Shaik, Ummar Pasha [ACRHEM, University of Hyderabad, Hyderabad-500046 (India); Krishna, M. Ghanashyam, E-mail: mgksp@uohyd.ac.in [ACRHEM and School of Physics, University of Hyderabad, Hyderabad-500046 (India)

2014-04-24T23:59:59.000Z

417

NREL Core Program (NCPV), Session: Film Silicon (Presentation)  

SciTech Connect (OSTI)

This project supports the Solar America Initiative by: R and D that contributes to goal of grid parity by 2015; research to fill the industry R and D pipeline for next-generation low-cost scalable products; development of industry collaborative research; and improvement of NREL tools and capabilities for film silicon research. The project addresses both parts of film silicon roadmap: (1) amorphous-silicon-based thin film PV--amorphous and nanocrystalline materials, present '2nd generation' technology, 4% of world PV sales in 2007; (2) advanced R and D toward film crystal silicon--definition, large-grained or single-crystal silicon < 100 {micro}m thick; 3-8 year horizon; and goal of reaching 15% cells at area costs approaching thin films.

Branz, H. M.

2008-04-01T23:59:59.000Z

418

High Volume Manufacturing of Silicon-Film Solar Cells and Modules; Final Subcontract Report, 26 February 2003 - 30 September 2003  

SciTech Connect (OSTI)

The objective of the PV Manufacturing R&D subcontract was to continue to improve AstroPower's technology for manufacturing Silicon-Film* wafers, solar cells, and modules to reduce costs, and increase production yield, throughput, and capacity. As part of the effort, new technology such as the continuous back metallization screen-printing system and the laser scribing system were developed and implemented. Existing processes, such as the silicon nitride antireflection coating system and the fire-through process were optimized. Improvements were made to the statistical process control (SPC) systems of the major manufacturing processes: feedstock preparation, wafer growth, surface etch, diffusion, and the antireflection coating process. These process improvements and improved process control have led to an increase of 5% relative power, and nearly 15% relative improvement in mechanical and visual yield.

Rand, J. A.; Culik, J. S.

2005-10-01T23:59:59.000Z

419

Assembly and characterization of colloid-based antireflective coatings on multicrystalline silicon solar cells  

E-Print Network [OSTI]

make them superhydrophobic and/or self-cleaning. 1 Introduction Photovoltaic (PV) devices such as solar solar cells Brian G. Prevo,{ Emily W. Hon and Orlin D. Velev* Received 4th September 2006, Accepted 10th solar cells. The nanocoatings reduced the reflectance of the solar cells by approximately 10% across

Velev, Orlin D.

420

Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}  

DOE Patents [OSTI]

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

Mickelsen, R.A.; Chen, W.S.

1985-08-13T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2  

DOE Patents [OSTI]

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Mickelsen, Reid A. (Bellevue, WA) [Bellevue, WA; Chen, Wen S. (Seattle, WA) [Seattle, WA

1985-08-13T23:59:59.000Z

422

The structure and kinematics of the the Galaxy thin gaseous disc outside the solar orbit  

E-Print Network [OSTI]

The rotation curve of the Galaxy is generally thought to be flat. However, using radial velocities from interstellar molecular clouds, which is common in rotation curve determination, seems to be incorrect and may lead to incorrectly inferring that the rotation curve is flat indeed. Tests basing on photometric and spectral observations of bright stars may be misleading. The rotation tracers (OB stars) are affected by motions around local gravity centers and pulsation effects seen in such early type objects. To get rid of the latter a lot of observing work must be involved. We introduce a method of studying the kinematics of the thin disc of our Galaxy outside the solar orbit in a way that avoids these problems. We propose a test based on observations of interstellar CaII H and K lines that determines both radial velocities and distances. We implemented the test using stellar spectra of thin disc stars at galactic longitudes of 135{\\degr} and 180{\\degr}. Using this method, we constructed the rotation curve of ...

Galazutdinov, G A; Musaev, F A; Bondar, A; Krelowski, J

2015-01-01T23:59:59.000Z

423

Copper and Transparent-Conductor Reflectarray Elements on Thin-Film Solar Cell Panels  

E-Print Network [OSTI]

This work addresses the integration of reflectarray antennas (RA) on thin film Solar Cell (SC) panels, as a mean to save real estate, weight, or cost in platforms such as satellites or transportable autonomous antenna systems. Our goal is to design a good RA unit cell in terms of phase response and bandwidth, while simultaneously achieving high optical transparency and low microwave loss, to preserve good SC and RA energy efficiencies, respectively. Since there is a trade-off between the optical transparency and microwave surface conductivity of a conductor, here both standard copper and transparent conductors are considered. The results obtained at the unit cell level demonstrates the feasibility of integrating RA on a thin-film SC, preserving for the first time good performance in terms of both SC and RA efficiency. For instance, measurement at X-band demonstrate families of cells providing a phase range larger than 270{\\deg} with average microwave loss of -2.45dB (resp. -0.25dB) and average optical transpa...

Dreyer, Philippe; Nicolay, Sylvain; Ballif, Christophe; Perruisseau-Carrier, Julien

2013-01-01T23:59:59.000Z

424

Ballistic Phonon Transport in Ultra-Thin Silicon Layers: Effects of Confinement and Orientation  

E-Print Network [OSTI]

­23]. The thermal conductivity in bulk Si is isotropic, however, in low-dimensional materials the choice formalism to calculate the thermal conductance. We consider the major thin layer surface orientations {100}, {110}, {111}, and {112}. For every surface orientation, we study thermal conductance as a function

425

EELS measurements of boron concentration profiles in p-a-Si and nip a-Si solar cells Bas B. Van Aken a,  

E-Print Network [OSTI]

that the optimum efficiency in nip solar cells is obtained when the p-a-SiC band gap is slightly larger than efficiency nip solar cells based on amorphous (a- Si:H) and microcrystalline (c-Si:H) silicon thin films efficiency Si solar cells, it is very important to control and limit the diffusion of B and C atoms

Dunin-Borkowski, Rafal E.

426

Amorphous silicon/polyaniline heterojunction solar cells: Fermi levels and open-circuit voltages  

E-Print Network [OSTI]

these open-circuit voltages are lower than for the best a-Si:H cells utilizing nanocrystalline Si or a reports on conducting polymer/ amorphous silicon (a-Si:H) structures [1­4] and conduct- ing polymer/crystalline silicon (c-Si) structures [5,6]. In this paper, we report our research on polyaniline (PANI)/a-Si:H

Schiff, Eric A.

427

New Metallization Technique Suitable for 6-MW Pilot Production of Efficient Multicrystalline Solar Cells Using Upgraded Metallurgical Silicon: Final Technical Progress Report, December 17, 2007-- June 16, 2009  

Broader source: Energy.gov [DOE]

This report describes CaliSolar's work as a Photovoltaic Technology Incubator awardee within the U.S. Department of Energy's Solar Energy Technologies Program. The term of this subcontract with the National Renewable Energy Laboratory was two years. During this time, CaliSolar evolved from a handful of employees to over 100 scientists, engineers, technicians, and operators. On the technical side, the company transitioned from a proof-of-concept through pilot-scale to large-scale industrial production. A fully automated 60-megawatt manufacturing line was commissioned in Sunnyvale, California. The facility converts upgraded metallurgical-grade silicon feedstock to ingots, wafers, and high-efficiency multicrystalline solar cells.

428

Infrared laser-based monitoring of the silane dissociation during deposition of silicon thin films  

SciTech Connect (OSTI)

The silane dissociation efficiency, or depletion fraction, is an important plasma parameter by means of which the film growth rate and the amorphous-to-microcrystalline silicon transition regime can be monitored in situ. In this letter we implement a homebuilt quantum cascade laser-based absorption spectrometer to measure the silane dissociation efficiency in an industrial plasma-enhanced chemical vapor deposition system. This infrared laser-based diagnostic technique is compact, sensitive, and nonintrusive. Its resolution is good enough to resolve Doppler-broadened rotovibrational absorption lines of silane. The latter feature various absorption strengths, thereby enabling depletion measurements over a wide range of process conditions.

Bartlome, R.; Feltrin, A.; Ballif, C. [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue A.-L. Breguet 2, 2000 Neuchatel (Switzerland)

2009-05-18T23:59:59.000Z

429

New strategy to promote conversion efficiency using high-index nanostructures in thin-film solar cells  

E-Print Network [OSTI]

Nano-scaled metallic or dielectric structures may provide various ways to trap light into thin-film solar cells for improving the conversion efficiency. In most schemes, the textured active layers are involved into light trapping structures that can provide perfect optical benefits but also bring undesirable degradation of electrical performance. Here we propose a novel approach to design high-performance thin-film solar cells. In our strategy, a flat active layer is adopted for avoiding electrical degradation, and an optimization algorithm is applied to seek for an optimized light trapping structure for the best optical benefit. As an example, we show that the efficiency of a flat a-Si:H thin-film solar cell can be promoted close to the certified highest value. It is also pointed out that, by choosing appropriate dielectric materials with high refractive index (>3) and high transmissivity in wavelength region of 350nm-800nm, the conversion efficiency of solar cells can be further enhanced.

Wang, DongLin

2014-01-01T23:59:59.000Z

430

Growth, structure and electrical properties of epitaxial thulium silicide thin films on silicon  

SciTech Connect (OSTI)

Thulium silicide thin films were grown on (100) and (111) Si by evaporation of Tm metal and Si layers and annealing in a vacuum. Electron microscopy and x-ray diffraction results showed that the TmSi{sub 2{minus}x} layers are of high crystalline quality grown epitaxially on Si. Electrical resistivity measurements showed that TmSi{sub 2{minus}x} layers are metallic exhibiting magnetic ordering below 3 K. {copyright} {ital 1997 American Institute of Physics.}

Travlos, A.; Salamouras, N.; Boukos, N. [Institute of Materials Science, National Centre for Scientific Research Demokritos, Athens, (Greece) 15310] [Institute of Materials Science, National Centre for Scientific Research Demokritos, Athens, (Greece) 15310

1997-02-01T23:59:59.000Z

431

Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films  

SciTech Connect (OSTI)

The mechanisms of silicon nanocrystal structure formation in amorphous Si films have been studied for a relative Ni impurity content varying between 0.1 and 10 at. %, i.e., from a Ni doping range to the Si-Ni alloy phase. The films, deposited by the cosputtering technique at 200 deg. C, were submitted to isochronal (15 min) annealing cycles up to 800 deg. C. Four different substrates were used to deposit the studied films: crystalline (c-) quartz, c-Si, c-Ge, and glass. Both the two orders of magnitude impurity concentration range variation and the very short annealing times were selected on purpose to investigate the first steps of the mechanism leading to the appearance of crystal seeds. The conclusions of this work are the following: (a) Ni impurity induces the low-temperature crystallization of amorphous silicon; (b) the NiSi{sub 2} silicide phase mediates, at the surface or in the bulk of the film, the crystallization process; and (c) the onset of crystallization and the crystalline fraction of the samples at each temperature depend not only on the Ni impurity concentration, but also on the nature of the substrate.

Ferri, F. A.; Zanatta, A. R.; Chambouleyron, I. [Instituto de Fisica de Sao Carlos-USP, Sao Carlos 13560-250, Sao Paulo (Brazil); Instituto de Fisica Gleb Wataghin-UNICAMP, Campinas 13083-970, Sao Paulo (Brazil)

2006-11-01T23:59:59.000Z

432

Performance of Ultra High Efficiency Thin Germanium P-N Junction Solar Cells Intended for Solar Thermophotovoltaic Application  

Science Journals Connector (OSTI)

The theoretical upper limit conversion efficiency as a function of cell thickness and ... is calculated for a germanium p-n junction solar cell intended for solar thermophotovoltaic energy conversion which incorp...

E. S. Vera; J. J. Loferski; M. Spitzer

1981-01-01T23:59:59.000Z

433

17.1%-Efficient Multi-Scale-Textured Black Silicon Solar Cells without Dielectric Antireflection Coating: Preprint  

SciTech Connect (OSTI)

In this work we present 17.1%-efficient p-type single crystal Si solar cells with a multi-scale-textured surface and no dielectric antireflection coating. Multi-scale texturing is achieved by a gold-nanoparticle-assisted nanoporous etch after conventional micron scale KOH-based pyramid texturing (pyramid black etching). By incorporating geometric enhancement of antireflection, this multi-scale texturing reduces the nanoporosity depth required to make silicon 'black' compared to nanoporous planar surfaces. As a result, it improves short-wavelength spectral response (blue response), previously one of the major limiting factors in 'black-Si' solar cells. With multi-scale texturing, the spectrum-weighted average reflectance from 350- to 1000-nm wavelength is below 2% with a 100-nm deep nanoporous layer. In comparison, roughly 250-nm deep nanopores are needed to achieve similar reflectance on planar surface. Here, we characterize surface morphology, reflectivity and solar cell performance of the multi-scale textured solar cells.

Toor, F.; Page, M. R.; Branz, H. M.; Yuan, H. C.

2011-07-01T23:59:59.000Z

434

Spin-dependent processes in amorphous silicon-rich silicon-nitride S.-Y. Lee,1  

E-Print Network [OSTI]

diodes9 and a-Si:H solar cells.10 Fol- lowing coherent manipulation of paramagnetic centers, tran- sient-band , TSAMPLE=15 K. Dark and illuminated IV curves of the p-i-n devices were measured at room temperature and T amorphous silicon nitride a-SiNx:H has been used widely as a dielectric for thin-film transistors,1 solar

McCamey, Dane

435

Deposition and characterization of polycrystalline silicon films on glass for thin film solar cells  

SciTech Connect (OSTI)

The authors deposit phosphorus-doped, amorphous Si by low pressure chemical vapor deposition and subsequently crystallize the films by furnace annealing at a temperature of 600 C. Optical in-situ monitoring allows one to control the crystallization process. Phosphorus doping leads to faster crystallization and a grain size enhancement with a maximum grain size of 15 {micro}m. Using transmission electron microscopy they find a log-normal grain size distribution in their films. They demonstrate that this distribution not only arises from solid phase crystallization of amorphous Si but also from other crystallization processes based on random nucleation and growth. The log-normal grain size distribution seems to be a general feature of polycrystalline semiconductors.

Bergmann, R.B.; Krinke, J.; Strunk, H.P.; Werner, J.H.

1997-07-01T23:59:59.000Z

436

Mass Production of Large-Area Integrated Thin-Film Silicon Solar-Cell Module  

Science Journals Connector (OSTI)

A mass-production technology of a-Si single junction modules with stable 8% efficiency had been developed in the Shiga factory of the Kaneka Corporation. In 1999, Kaneka instituted Kaneka Solartech Corporation...

Yoshihisa Tawada; H. Yamagishi; K. Yamamoto

2004-01-01T23:59:59.000Z

437

Technology of Amorphous Silicon Thin Films for Solar Cells and Applications to Power Systems  

Science Journals Connector (OSTI)

Preliminary attempts have been made to grow non-hydrogenated a-Si films by evaporation in an ordinary vacuum system (ultimate pressure 10?6 Toor) fitted with a six-hearth electron gun and a substrate heater. This...

D. Girginoudi; A. Thanailakis; P. Abarian

1983-01-01T23:59:59.000Z

438

LAYER TRANSFER OF LARGE AREA MACROPOROUS SILICON FOR MONOCRYSTALLINE THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

. A phosphorous diffusion with a sheet resistance of 10 /sq. improves the rear contact during electrochemical

439

Thin Solid Films 430 (2003) 125129 0040-6090/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved.  

E-Print Network [OSTI]

for a-Si:H solar cell fabrication. In addition to photovoltaic applications, a-Si:H is also used of amorphous silicon (a-Si:H)-based photovoltaic devices, it is important to deposit high- quality a progress has been made in hydrogenated amorphous silicon (a-Si:H)-based thin film photovoltaic devices

Deng, Xunming

440

Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser  

SciTech Connect (OSTI)

The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-?m thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550?C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450?C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550?C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450?C, which limits the solar cell performance by n?=?2 recombination, and a performance degradation is expected due to severe shunting.

Yun, J., E-mail: j.yun@unsw.edu.au; Varalmov, S.; Huang, J.; Green, M. A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Suntech R and D Australia, Botany, New South Wales 2019 (Australia)

2014-06-16T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Performance Measurement Technologies for High-Efficiency Crystalline Silicon Solar Cells  

Science Journals Connector (OSTI)

Accurate measurements of the IV curves of crystalline silicon c-Si cells and modules are discussed. Special attention is paid to the recent high-efficiency devices. The effect of the sweep speed and direction...

Yoshihiro Hishikawa

2009-01-01T23:59:59.000Z

442

Identification and mitigation of performance-limiting defects in epitaxially grown kerfless silicon for solar cells  

E-Print Network [OSTI]

Reducing material use is a major driver for cost reduction of crystalline silicon photovoltaic modules. The dominant wafer fabrication process employed in the industry today, ingot casting & sawing, wastes approximately ...

Powell, Douglas M. (Douglas Michael)

2014-01-01T23:59:59.000Z

443

California: TetraCell Silicon Solar Cell Improves Efficiency, Wins R&D 100 Award  

Office of Energy Efficiency and Renewable Energy (EERE)

TetraSun, in partnership with the National Renewable Energy Laboratory, developed a novel crystalline silicon photovoltaic (PV) cell architecture and manufacturing process that achieves efficiencies exceeding 21% with costs comparable to conventional crystalline PV cells.

444

Antireflective silicon nanostructures with hydrophobicity by metal-assisted chemical etching for solar cell applications  

Science Journals Connector (OSTI)

We present broadband antireflective silicon (Si) nanostructures with hydrophobicity using a spin-coated Ag ink and by subsequent metal-assisted chemical etching (MaCE). Improved understanding of ... reveals a des...

ChanIl Yeo; Joon Beom Kim; Young Min Song; Yong Tak Lee

2013-04-01T23:59:59.000Z

445

Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing  

SciTech Connect (OSTI)

We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 {mu}m, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

Machida, Emi [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192 (Japan); Research Fellowships of the Japan Society for the Promotion of Science, Japan Society for the Promotion of Science, 1-8 Chiyoda, Tokyo 102-8472 (Japan); Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192 (Japan); Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332-0012 (Japan); Ikenoue, Hiroshi [Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka 819-0395 (Japan)

2012-12-17T23:59:59.000Z

446

ENHANCED GROWTH RATE AND SILANE UTILIZATION IN AMORPHOUS SILICON AND NANOCRYSTALLINE-SILICON SOLAR CELL DEPOSITION VIA GAS PHASE ADDITIVES  

SciTech Connect (OSTI)

Air Products set out to investigate the impact of additives on the deposition rate of both ???µCSi and ???±Si-H films. One criterion for additives was that they could be used in conventional PECVD processing, which would require sufficient vapor pressure to deliver material to the process chamber at the required flow rates. The flow rate required would depend on the size of the substrate onto which silicon films were being deposited, potentially ranging from 200 mm diameter wafers to the 5.7 m2 glass substrates used in GEN 8.5 flat-panel display tools. In choosing higher-order silanes, both disilane and trisilane had sufficient vapor pressure to withdraw gas at the required flow rates of up to 120 sccm. This report presents results obtained from testing at Air Products?¢???? electronic technology laboratories, located in Allentown, PA, which focused on developing processes on a commercial IC reactor using silane and mixtures of silane plus additives. These processes were deployed to compare deposition rates and film properties with and without additives, with a goal of maximizing the deposition rate while maintaining or improving film properties.

Ridgeway, R.G.; Hegedus, S.S.; Podraza, N.J.

2012-08-31T23:59:59.000Z

447

Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance  

SciTech Connect (OSTI)

We report on CdS/CdTe photovoltaic devices that contain a thin Ta2O5 film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta2O5 films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta2O5 interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta2O5 interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.

Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor

2012-05-05T23:59:59.000Z

448

Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics  

E-Print Network [OSTI]

energy sources, the potential of solar energy is the mostuse of solar cells as an energy source [2]. Therefore, thinspread use of solar cells as a renewable energy source [2].

Chung, Choong-Heui

2012-01-01T23:59:59.000Z

449

SunShot Initiative: Dye-Sensitized Solar Cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Dye-Sensitized Solar Cells to Dye-Sensitized Solar Cells to someone by E-mail Share SunShot Initiative: Dye-Sensitized Solar Cells on Facebook Tweet about SunShot Initiative: Dye-Sensitized Solar Cells on Twitter Bookmark SunShot Initiative: Dye-Sensitized Solar Cells on Google Bookmark SunShot Initiative: Dye-Sensitized Solar Cells on Delicious Rank SunShot Initiative: Dye-Sensitized Solar Cells on Digg Find More places to share SunShot Initiative: Dye-Sensitized Solar Cells on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Dye-Sensitized Solar Cells Graphic showing the seven layers of a dye-sensitized PV cell: electrode, hole conductor, dope, TiO2, blocking layer, transparent conductive oxide, and glass.

450

Piezoelectric, solar and thermal energy harvesting for hybrid low-power generator systems with thin-film batteries  

Science Journals Connector (OSTI)

The harvesting of ambient energy to power small electronic components has received tremendous attention over the last decade. The research goal in this field is to enable self-powered electronic components for use particularly in wireless sensing and measurement applications. Thermal energy due to temperature gradients, solar energy and ambient vibrations constitute some of the major sources of energy that can be harvested. Researchers have presented several papers focusing on each of these topics separately. This paper aims to develop a hybrid power generator and storage system using these three sources of energy in order to improve both structural multifunctionality and system-level robustness in energy harvesting. A multilayer structure with flexible solar, piezoceramic, thin-film battery and metallic substructure layers is developed (with the overhang dimensions of 93 mm ? 25 mm ? 1.5 mm in cantilevered configuration). Thermal energy is also used for charging the thin-film battery layers using a 30.5 mm ? 33 mm ? 4.1 mm generator. Performance results are presented for charging and discharging of the thin-film battery layers using each one of the harvesting methods. It is shown based on the extrapolation of a set of measurements that 1 mA h of a thin-film battery can be charged in 20 min using solar energy (for a solar irradiance level of 223 W m?2), in 40 min using thermal energy (for a temperature difference of 31 C) and in 8 h using vibrational energy (for a harmonic base acceleration input of 0.5g at 56.4 Hz).

P Gambier; S R Anton; N Kong; A Erturk; D J Inman

2012-01-01T23:59:59.000Z

451

Fabrication of ultra thin CdS/CdTe solar cells by magnetron sputtering.  

E-Print Network [OSTI]

?? CdTe is a nearly perfect absorber material for second generation polycrystalline solar cells because the bandgap closely matches the peak of the solar spectrum, (more)

Plotnikov, Victor

2009-01-01T23:59:59.000Z

452

The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer.  

SciTech Connect (OSTI)

The unique combination of thermo-mechanical and physiochemical properties of silicon carbide (SiC) provides interest and opportunity for its use in nuclear applications. One of the applications of SiC is as a very thin layer in the TRi-ISOtropic (TRISO) coated fuel particles for high temperature gas reactors (HTGRs). This SiC layer, produced by chemical vapor deposition (CVD), is designed to withstand the pressures of fission and transmutation product gases in a high temperature, radiation environment. Various researchers have demonstrated that macroscopic properties can be affected by changes in the distribution of grain boundary plane orientations and misorientations [1 - 3]. Additionally, various researchers have attributed the release behavior of Ag through the SiC layer as a grain boundary diffusion phenomenon [4 - 6]; further highlighting the importance of understanding the actual grain characteristics of the SiC layer. Both historic HTGR fission product release studies and recent experiments at Idaho National Laboratory (INL) [7] have shown that the release of Ag-110m is strongly temperature dependent. Although the maximum normal operating fuel temperature of a HTGR design is in the range of 1000-1250C, the temperature may reach 1600C under postulated accident conditions. The aim of this specific study is therefore to determine the magnitude of temperature dependence on SiC grain characteristics, expanding upon initial studies by Van Rooyen et al, [8; 9].

Isabella J van Rooyen; Philippus M van Rooyen; Mary Lou Dunzik-Gougar

2013-08-01T23:59:59.000Z

453

Doping profiles in CdTe/CdS thin film solar cells  

Science Journals Connector (OSTI)

CdS/CdTe thin film solar cells showing comparable properties as commercial cells have been prepared by close space sublimation (CSS) in our own laboratory. We characterised the cells by capacitancevoltage profiling (CV), thermal admittance spectroscopy (TAS), and thermally stimulated capacitance measurements (TSCAP). The doping profiles of the CdTe layer obtained by CV measurements confirm the well known rise in dopant concentration with increasing depth if the usual evaluation procedure is employed. However, the TAS and TSCAP measurements reveal deep acceptors in the CdTe layer with a large concentration exceeding that of the shallow dopants. Under these conditions, CV measurements are shown to yield an apparently rising dopant concentration even for homogeneous doping. A combined simulation of doping profiles measured at different temperatures using a fixed and uniform shallow and deep doping fits well to measured doping concentration. These results indicate how to get reliable information on the shallow dopant concentration.

U. Reislhner; M. Hdrich; N. Lorenz; H. Metzner; W. Witthuhn

2007-01-01T23:59:59.000Z

454

Ho3+-doped nanophase glass ceramics for efficiency enhancement in silicon solar cells  

Science Journals Connector (OSTI)

Currently Er3+-doped fluorides are being used as upconversion phosphors to enhance the efficiency of Si solar cells, to our knowledge. However, this enhancement is...

Lahoz, Fernando

2008-01-01T23:59:59.000Z

455

Pulsed energy synthesis and doping of silicon carbide  

DOE Patents [OSTI]

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

1995-06-20T23:59:59.000Z

456

Pulsed energy synthesis and doping of silicon carbide  

DOE Patents [OSTI]

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Thompson, Jesse B. (Brentwood, CA); Sigmon, Thomas W. (Beaverton, OR)

1995-01-01T23:59:59.000Z

457

Thin-film solar cells: review of materials, technologies and commercial status  

Science Journals Connector (OSTI)

As apparent from Table1..., showing the production volume for different manufacturers of these thin-film technologies over the past 3years, rapidly-growing ... are also increasing rapidly, the thin-film technologies

Martin A. Green

2007-10-01T23:59:59.000Z

458

SYNTHESIS AND CHARACTERIZATION OF SILICON NANOROD ARRAYS FOR SOLAR CELL APPLICATIONS  

E-Print Network [OSTI]

. Four-point and gate-bias-dependent resistance measurements were made on single wires created either lithographically using a lift-off process, or by simple evaporation of a thin (1 - 50 nm

Atwater, Harry

459

Back-side hydrogenation technique for defect passivation in silicon solar cells  

DOE Patents [OSTI]

A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts. 3 figures.

Sopori, B.L.

1994-04-19T23:59:59.000Z

460

NANOCOMPOSITE ENABLED SENSITIZED SOLAR CELL  

E-Print Network [OSTI]

is mostly thin- film solar technology, such as CdTe and CuInimportant. Thin film solar technology such as CIGS (Copper,in all thin-film solar cell technologies is that absorbance

Phuyal, Dibya

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Temperature-Dependent Photoluminescence Imaging and Characterization of a Multi-Crystalline Silicon Solar Cell Defect Area: Preprint  

SciTech Connect (OSTI)

Photoluminescence (PL) imaging is used to detect areas in multi-crystalline silicon that appear dark in band-to-band imaging due to high recombination. Steady-state PL intensity can be correlated to effective minority-carrier lifetime, and its temperature dependence can provide additional lifetime-limiting defect information. An area of high defect density has been laser cut from a multi-crystalline silicon solar cell. Both band-to-band and defect-band PL imaging have been collected as a function of temperature from ~85 to 350 K. Band-to-band luminescence is collected by an InGaAs camera using a 1200-nm short-pass filter, while defect band luminescence is collected using a 1350-nm long pass filter. The defect band luminescence is characterized by cathodo-luminescence. Small pieces from adjacent areas within the same wafer are measured by deep-level transient spectroscopy (DLTS). DLTS detects a minority-carrier electron trap level with an activation energy of 0.45 eV on the sample that contained defects as seen by imaging.

Johnston, S.; Yan, F.; Li, J.; Romero, M. J.; Al-Jassim, M.; Zaunbrecher, K.; Sidelkheir, O.; Blosse, A.

2011-07-01T23:59:59.000Z

462

Introduction Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells  

Science Journals Connector (OSTI)

Although photovoltaic solar energy technology (PV) is not the sole answer to the challenges posed by the ever-growing energy consumption worldwide, this renewable energy option can make an important contributi...

Wilfried van Sark; Lars Korte

2012-01-01T23:59:59.000Z

463

Improved photovoltaic performance of silicon nanowire/organic hybrid solar cells by incorporating silver nanoparticles  

Science Journals Connector (OSTI)

Organic solar cells have emerged as potential energy conversion devices ... -transparent characteristics, and ability to large-scale production at low temperature [13...]. However, their reported efficiencies ar...

Kong Liu; Shengchun Qu; Xinhui Zhang; Furui Tan; Zhanguo Wang

2013-02-01T23:59:59.000Z

464

High Efficiency CdTe/CdS Thin Film solar Cells by a Process Suitable for Large Scale Production. N. Romeo, A. Bosio, A. Romeo, M. Bianucci, L. Bonci, C. Lenti  

E-Print Network [OSTI]

High Efficiency CdTe/CdS Thin Film solar Cells by a Process Suitable for Large Scale Production. N-mail:Nicola.Romeo@fis.unipr.it ABSTRACT: It has been demonstrated that CdTe/CdS thin film solar cells can exhibit an efficiency around 16 Film. 1 INTRODUCTION CdTe/CdS thin film solar cells have a good possibility to be produced on large

Romeo, Alessandro

465

High efficiency thin-film crystalline Si/Ge tandem solar cell  

Science Journals Connector (OSTI)

We propose and simulate a photovoltaic solar cell comprised of Si and Ge pn junctions in tandem. With an anti-reflection film at the front surface, we have shown that optimal solar...

Sun, G; Chang, F; Soref, R A

2010-01-01T23:59:59.000Z

466

Control of thermal emittance of stainless steel using sputtered tungsten thin films for solar thermal power applications  

Science Journals Connector (OSTI)

Abstract Low thermal emittance is the key factor of a solar collector. For high temperature solar thermal applications, low emittance is an important parameter, because the thermal radiative losses of the absorbers increase proportionally by T4. Our primary motivation for carrying out this work has been to lower the thermal emittance of stainless steel substrate (intrinsic emittance=0.120.13) by coating a thin film of high infrared (IR) reflecting tungsten (W). Tungsten thin films were deposited on stainless steel substrates using a glow discharge direct current magnetron sputtering system. Emittance as low as 0.03 was obtained by varying the thickness of W coating on stainless steel substrate. The influences of structural, morphological and electrical properties of the W coating on its emittance values are studied. The effect of substrate roughness on the emittance of W coating is also examined. Thermal stability of the W coatings is studied in both vacuum and air. In order to demonstrate the effect of W interlayer, solar selective coating of AlTiN/AlTiON/AlTiO tandem absorber was deposited on W coated stainless steel substrates, which exhibited absorptance of 0.955 and emittance of 0.08 with a thermal stability up to 600C in vacuum.

K.P. Sibin; Siju John; Harish C. Barshilia

2015-01-01T23:59:59.000Z

467

Effect of Au, Ag and Cu thin films' thickness on the electrical parameters of metal-porous silicon direct hydrogen fuel cell  

Science Journals Connector (OSTI)

Abstract The effect of the thickness of the gold, silver and cupper films on the electrical properties such as open circuit voltage (Voc) and short circuit current (Isc), in the direct hydrogen fuel cell, which uses water as a source of hydrogen, is studied by fabricating Metal/Porous Silicon/n-Silicon/Indium structures. The Porous Silicon (PS) layer on n-type (111) oriented silicon wafers were prepared by anodization. The thin films of Au or Ag or Cu with different thicknesses between 120 and 600nm were deposited onto the PS surface by the electron-beam technique. The obtained results indicated that Voc and Isc, strongly depend on the Au, Ag and Cu layer thicknesses. The Au/PS/n-Si structure generated highest Voc and Isc values for all thicknesses of Au film. The best values of Voc and Isc were obtained at 325nm as 0.89V and 0.021mA for Au, at 350nm as 0.75V and 0.017mA for Ag, at 350nm as 0.50V and 0.010mA, respectively.

Cigdem Oruc; Sevinc Guler

2014-01-01T23:59:59.000Z

468

Experimental optimization of an anisotropic etching process for random texturization of silicon solar cells  

SciTech Connect (OSTI)

A multifactor experimental investigation of silicon surface texturing was conducted in Sandia's Photovoltaic Device Fabrication Laboratory using aqueous potassium-hydroxide (KOH) solutions with isopropyl alcohol (IPA) added as a complexing agent. Czochralski, magnetic-Czochralski, and float-zone silicon wafers of different resistivities with both polished and lapped surfaces were included in the experiment. Process variables considered were solution temperature, time in solution, degree of mechanical mixing, KOH concentration, and IPA concentration. Using hemispherical reflectance as the primary gauge of success, process variables were identified that resulted in an effective surface texture with reflectance less than 12% prior to anti-reflection coating. Of particular interest was a low temperature (70 {degrees}C) process with less than 2% concentration of both KOH and IPA and wide process variable tolerances. 6 refs., 6 figs., 1 tab.

King, D.L.; Buck, M.E.

1991-01-01T23:59:59.000Z

469

Excellent Passivation and Low Reflectivity Al2O3/TiO2 Bilayer Coatings for n-Wafer Silicon Solar Cells: Preprint  

SciTech Connect (OSTI)

A bilayer coating of Al2O3 and TiO2 is used to simultaneously achieve excellent passivation and low reflectivity on p-type silicon. This coating is targeted for achieving high efficiency n-wafer Si solar cells, where both passivation and anti-reflection (AR) are needed at the front-side p-type emitter. It could also be valuable for front-side passivation and AR of rear-emitter and interdigitated back contact p-wafer cells. We achieve high minority carrier lifetimes {approx}1 ms, as well as a nearly 2% decrease in absolute reflectivity, as compared to a standard silicon nitride AR coating.

Lee, B. G.; Skarp, J.; Malinen, V.; Li, S.; Choi, S.; Branz, H. M.

2012-06-01T23:59:59.000Z

470

Manipulating hybrid structures of polymer/a-Si for thin film solar cells  

SciTech Connect (OSTI)

A series of uniform polymer/amorphous silicon hybrid structures have been fabricated by means of solution-casting for polymer and radio frequency excited plasma enhanced chemical vapour deposition for amorphous silicon (a-Si:H). Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) functioned as a photoactive donor, while the silicon layer acted as an acceptor. It is found that matching the hole mobility of the polymer to the electron mobility of amorphous silicon is critical to improve the photovoltaic performance from hybrid cells. A three-layer p-i-n structure of ITO/PEDOT:PSS(200?nm)/i-Si(450?nm)/n-Si(200?nm)/Al with a power conversion efficiency of 4.78% under a standard test condition was achieved.

Peng, Ying; He, Zhiqun, E-mail: zhqhe@bjtu.edu.cn, E-mail: J.I.B.Wilson@hw.ac.uk; Zhang, Zhi; Liang, Chunjun [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Diyaf, Adel; Ivaturi, Aruna; Wilson, John I. B., E-mail: zhqhe@bjtu.edu.cn, E-mail: J.I.B.Wilson@hw.ac.uk [SUPA, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)

2014-03-10T23:59:59.000Z

471

Effect of Ag doping on opto-electrical properties of CdS thin films for solar cell applications  

Science Journals Connector (OSTI)

Abstract Cadmium sulfide (CdS) polycrystalline thin films of different thicknesses (ranging from 370nm to 750nm) were fabricated on corning glass substrates using Close Spaced Sublimation (CSS) technique. Optical and electrical investigation revealed that CdS thin films show an appreciable transparency (5070% transmission) in visible range and a highly resistive behavior (106?cm). Samples were doped by silver (Ag) at different concentrations, using ion exchange technique, in order to reduce the resistivity of CdS thin films and to improve their efficiency as a window layer for solar cell application. The doping of Ag in pure CdS thin films resulted into an increase of surface roughness and a decrease both in electrical resistivity and in transparency. By optimizing annealing parameters, we were able to properly control the optical properties of the present system. In fact, the Ag doping of pure CdS films has led to a decrease of the sample resistivity by three orders of magnitude (103?cm) against a 20% cut in optical transmission.

Adnan Nazir; Andrea Toma; Nazar Abbas Shah; Simone Panaro; Sajid Butt; Rizwan ur Rehman Sagar; Waseem Raja; Kamran Rasool; Asghari Maqsood

2014-01-01T23:59:59.000Z

472

Fabrication of contacts for silicon solar cells including printing burn through layers  

DOE Patents [OSTI]

A method for fabricating a contact (240) for a solar cell (200). The method includes providing a solar cell substrate (210) with a surface that is covered or includes an antireflective coating (220). For example, the substrate (210) may be positioned adjacent or proximate to an outlet of an inkjet printer (712) or other deposition device. The method continues with forming a burn through layer (230) on the coating (220) by depositing a metal oxide precursor (e.g., using an inkjet or other non-contact printing method to print or apply a volume of liquid or solution containing the precursor). The method includes forming a contact layer (240) comprising silver over or on the burn through layer (230), and then annealing is performed to electrically connect the contact layer (240) to the surface of the solar cell substrate (210) through a portion of the burn through layer (230) and the coating (220).

Ginley, David S; Kaydanova, Tatiana; Miedaner, Alexander; Curtis, Calvin J; Van Hest, Marinus Franciscus Antonius Maria

2014-06-24T23:59:59.000Z

473

Alta Devices Develops World Record Setting Thin-Film Solar Cell  

Office of Energy Efficiency and Renewable Energy (EERE)

EERE supported the development of Alta Devices' thin film Gallium Arsenide photovoltaic technology that set a world record for conversion efficiency.

474

Absorber processing issues in high-efficiency, thin-film Cu(In,Ga)Se{sub 2}-based solar cells  

SciTech Connect (OSTI)

Three approaches to thin-film Cu(In,Ga)Se{sub 2} absorber fabrication are considered. They are generically described in terms of the sequential or concurrent nature of source material delivery, selenium delivery, and compound formation. A two-stage evaporation process successfully produced the absorber component of a world-record, 17.1{percent} efficient solar cell. Alternative approaches that reduce the requirements for high substrate temperatures are considered. The relationship between absorber process parameters, band gap profile, and device performance are examined. Engineering the [Ga]/([Ga]+[In]) profile in the absorber has led to the reported advances. {copyright} {ital 1996 American Institute of Physics.}

Tuttle, J.R.; Gabor, A.M.; Contreras, M.A.; Tennant, A.L.; Ramanathan, K.R.; Franz, A.; Matson, R.; Noufi, R. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

1996-01-01T23:59:59.000Z

475

Simulation of nanostructure-based and ultra-thin film solar cell devices beyond the classical picture  

E-Print Network [OSTI]

In this paper, an optoelectronic device simulation framework valid for arbitrary spatial variation of electronic potentials and optical modes, and for transport regimes ranging from ballistic to diffusive, is used to study non-local photon absorption, photocurrent generation and carrier extraction in ultra-thin film and nanostructure-based solar cell devices at the radiative limit. Among the effects that are revealed by the microscopic approach and which are inaccessible to macroscopic models is the impact of structure, doping or bias induced nanoscale potential variations on the local photogeneration rate and the photocarrier transport regime.

Aeberhard, Urs

2014-01-01T23:59:59.000Z

476

Optical properties of nanostructured silicon-rich silicon dioxide  

E-Print Network [OSTI]

We have conducted a study of the optical properties of sputtered silicon-rich silicon dioxide (SRO) thin films with specific application for the fabrication of erbium-doped waveguide amplifiers and lasers, polarization ...

Stolfi, Michael Anthony

2006-01-01T23:59:59.000Z

477

High Efficiency CdTe and CIGS Thin Film Solar Cells: Highlights...  

Office of Scientific and Technical Information (OSTI)

Technologies, NYCA MiaSole, CA HelioVolt, Tx Solyndra, CA SoloPower, CA Wurth Solar, Germany SULFURCELL, Germany CIS Solartechnik, Germany Solarion, Germany Solibro, Sweden...

478

Plasmonic gratings for enhanced light-trapping in thin-film organic solar cells  

Science Journals Connector (OSTI)

We discuss optimized silver gratings to enhance absorption in organic solar cells. The enhancement is attributed to generated surface plasmon (SP) polaritons and localized SP...

Le, Khai Q; Al, Andrea

479

Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells  

Science Journals Connector (OSTI)

Dielectric/metal/dielectric (DMD) electrodes have the potential to significantly increase the absorption efficiency and photocurrent in flexible organic solar cells. We demonstrate...

Sergeant, Nicholas P; Niesen, Bjoern; Liu, Albert S; Boman, Lee; Stoessel, Chris; Heremans, Paul; Peumans, Peter; Rand, Barry P; Fan, Shanhui

2013-01-01T23:59:59.000Z

480

Innovative Systems Engineering Solar LLC ISE Solar LLC | Open Energy  

Open Energy Info (EERE)

Solar LLC ISE Solar LLC Solar LLC ISE Solar LLC Jump to: navigation, search Name Innovative Systems Engineering Solar LLC (ISE Solar LLC) Place Warminster, Pennsylvania Zip 18974-1454 Sector Solar Product US-based manufacturer of vacuum deposition equipment for thin-film amorphous silicon products; offers management and operation of thin-film solar plants. Coordinates 40.205459°, -75.100077° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.205459,"lon":-75.100077,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

Note: This page contains sample records for the topic "thin silicon solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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481

Amorphous and microcrystalline silicon technology -- 1998  

SciTech Connect (OSTI)

Although this new volume from MRS is the 16th in a long-standing and successful series, the focus is no longer limited to hydrogenated amorphous silicon (a-Si:H). The distinction between short- and medium-range order, and between homogeneous and heterogeneous semiconductor materials, is indeed too difficult to maintain. Instead, the volume covers amorphous and microcrystalline silicon from materials physics to new applications. Papers from a joint session with a symposium on ``Flat-Panel Display Materials and Large-Area Processes`` are included. The volume also features special focused sessions on heterogeneous materials, color sensors and radiation imaging, and parameter extraction and device modeling. Topics include: amorphous and polycrystalline thin-film transistors; solar cells; color and X-ray sensors, novel devices, luminescence and sensitization; device modeling and parameter extraction; growth, alloys and clathrates; metastability, hydrogen, atomic and electronic structure; defects and charge transport; and heterogeneous silicon--formation, properties and devices. It includes 152 papers.

Schropp, R. [ed.] [Utrecht Univ. (Netherlands); Branz, H.M. [ed.] [National Renewable Energy Lab., Golden, CO (United States); Shimizu, Isamu [ed.] [Tokyo Inst. of Tech. (Japan); Wagner, S. [ed.] [Princeton Univ., NJ (United States); Hack, M. [ed.

1999-08-01T23:59:59.000Z

482

Formosun Solar Corp | Open Energy Information  

Open Energy Info (EERE)

search Name: Formosun Solar Corp. Place: Hsinchu County, Taiwan Zip: 303-51 Sector: Solar Product: Thin-film solar cell producer based in Taiwan. References: Formosun Solar...

483

Designing Randomness - The Impact of Textured Surfaces on the Efficiency of Thin-Film Solar Cells  

Science Journals Connector (OSTI)

We analyze experimentally and theoretically light localization at randomly textured ZnO surfaces and light absorption in thin-film amorphous Si deposited conformal on it. Guidance is...

Beckers, Thomas; Bittkau, Karsten; Carius, Reinhard; Fahr, Stephan; Rockstuhl, Carsten; Lederer, Falk

484

Development of CdTe thin film solar cells on flexible foil substrates.  

E-Print Network [OSTI]

??Cadmium telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal band gap of 1.45 eV, its high optical absorption (more)

Hodges, Deidra Ranel

2009-01-01T23:59:59.000Z

485

CdTe/CdS Thin Film Solar Cells Fabricated on Flexible Substrates.  

E-Print Network [OSTI]

??Cadmium Telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal bandgap of 1.45 eV and its high optical absorption (more)

Palekis, Vasilios

2011-01-01T23:59:59.000Z

486

Towards Large Area Industrial Cost Competitive Coating for Thin Film Solar Electricity Production  

Science Journals Connector (OSTI)

Thin film PV market faces a struggling situation due to the need of reducing strongly prices, which can be done by increasing efficiency and reducing fabrication costs. Improvement of...

Bermudez, Veronica

487

Plasma polymerization of C[subscript 4]F[subscript 8] thin film on high aspect ratio silicon molds  

E-Print Network [OSTI]

High aspect ratio polymeric micro-patterns are ubiquitous in many fields ranging from sensors, actuators, optics, fluidics and medical. Second generation PDMS molds are replicated against first generation silicon molds ...

Yeo, L. P.

488

Solar  

Science Journals Connector (OSTI)

With sharp drop in costs for photovoltaic and solar thermal processes, solar energy has become more attractive alternative ... Almost half the total was earmarked for PV and solar thermal projects. ...

WARD WORTHY

1991-06-17T23:59:59.000Z

489

Neutron reflectometry characterization of interface width between sol-gel titanium dioxide and silicon dioxide thin films  

SciTech Connect (OSTI)

Neutron reflectometry (NR) was used to directly measure the interface width between a titanium dioxide and a silicon dioxide film deposited by sol-gel processing. In a bilayer heated to 450 C, NR measurements showed that the interface width is 0.8 nm. This width is the same as the roughness of a sol-gel silicon dioxide surface after the same heat treatment, suggesting no interdiffusion or mixing at the bilayer interface.

Keddie, J.L.; Norton, L.J.; Kramer, E.J.; Giannelis, E.P. (Cornell Univ., Ithaca, NY (United States). Dept. of Materials Science and Engineering)

1993-10-01T23:59:59.000Z

490

NANOCOMPOSITE ENABLED SENSITIZED SOLAR CELL  

E-Print Network [OSTI]

in all thin-film solar cell technologies is that absorbancecells. These emerging solar cell technologies have undergonethe various solar cell technologies and their progress as

Phuyal, Dibya

2012-01-01T23:59:59.000Z

491

Array automated assembly task low cost silicon solar array project. Phase 2. Final report  

SciTech Connect (OSTI)

The initial contract was a Phase II Process Development for a process sequence, but with concentration on two particular process steps: laserscribing and spray-on junction formation. The add-on portion of the contract was to further develop these tasks, to incorporate spray-on of AR Coating and aluminum and to study the application of microwave energy to solar cell fabrication. The overall process cost projection is 97.918 cents/Wp. The major contributor to this excess cost is the module encapsulation materials cost. During the span of this contract the study of microwave application to solar cell fabrication produced the ability to apply this technique to any requirement of 600/sup 0/C or less. Above this temperature, non-uniformity caused the processing to be unreliable. The process sequence is described in detail, and a SAMICS cost analysis for each valid process step studied is presented. A temporary catalog for expense items is included, and engineering specifications for the process steps are given. (WHK)

Olson, Clayton

1980-12-01T23:59:59.000Z

492

Barrier Coatings for Thin Film Solar Cells: Final Subcontract Report, September 1, 2002 -- January 30, 2008  

SciTech Connect (OSTI)

This program has involved investigations of the stability of CdTe and copper-indium-gallium-diselenide (CIGS) solar cells under damp heat conditions and effects of barrier coatings.

Olsen, L. C.

2010-03-01T23:59:59.000Z

493

Light trapping in thin film solar cells using textured photonic crystal  

DOE Patents [OSTI]

A solar cell includes a photoactive region that receives light. A photonic crystal is coupled to the photoactive region, wherein the photonic crystal comprises a distributed Bragg reflector (DBR) for trapping the light.

Yi, Yasha (Somerville, MA); Kimerling, Lionel C. (Concord, MA); Duan, Xiaoman (Amesbury, MA); Zeng, Lirong (Cambridge, MA)

2009-01-27T23:59:59.000Z

494

Luminescent Study of Recombination Processes in the Single-Crystal Silicon and Silicon Structures Fabricated Using High-Efficiency Solar Cell Technology  

Science Journals Connector (OSTI)

Some results of the authors researches in the last decade of the luminescence in the region of the fundamental absorption edge (edge luminescence) of the single-crystal silicon (c-Si), including structures which...

A. M. Emelyanov

2014-01-01T23:59:59.000Z

495

Solar Energy Materials & Solar Cells 91 (2007) 17261732 Optical and structural properties of Ta2O5CeO2 thin films  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 91 (2007) 1726­1732 Optical and structural properties of Ta2O5

Thirumalai, Devarajan

496

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas in Substitution of CdCl2  

E-Print Network [OSTI]

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas delle Scienze, 37/A-43010 Fontanini, Parma, Italy ABSTRACT: CdTe/CdS thin film solar cells have reached in the preparation of high efficiency CdTe/CdS solar cells is the activation treatment of CdTe film. Most research

Romeo, Alessandro

497

Degradation of Boron-Doped Czochralski-Grown Silicon Solar Cells  

Science Journals Connector (OSTI)

The formation mechanism and properties of the boron-oxygen center responsible for the degradation of Czochralski-grown Si(B) solar cells during operation is investigated using density functional calculations. We find that boron traps an oxygen dimer to form a bistable defect with a donor level in the upper half of the band gap. The activation energy for its dissociation is found to be 1.2eV. The formation of the defect from mobile oxygen dimers, which are shown to migrate by a Bourgoin mechanism under minority carrier injection, has a calculated activation energy of 0.3eV. These energies and the dependence of the generation rate of the recombination center on boron concentration are in good agreement with observations.

J. Adey; R. Jones; D. W. Palmer; P. R. Briddon; S. berg

2004-07-30T23:59:59.000Z

498

Electron and hole drift mobility measurements on thin film CdTe solar cells Qi Long, Steluta A. Dinca, E. A. Schiff, Ming Yu, and Jeremy Theil  

E-Print Network [OSTI]

(2004); 10.1063/1.1645322 Cathodoluminescence of Cu diffusion in CdTe thin films for CdTe/CdS solar://scitation.aip.org/content/aip/journal/apl/105/4?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Copper-doped Cd

Schiff, Eric A.

499

CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar  

E-Print Network [OSTI]

CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar 1 , Parag). i:ZnO/Al:ZnO transparent and conducting window bilayer was deposited by RF magnetron sputtering

Sites, James R.

500

Polymer and organic solar cells viewed as thin film technologies: What it will take for them to become a success outside academia  

Science Journals Connector (OSTI)

Abstract The polymer and organic solar cell technology is critically presented in the context of other thin film technologies with a specific focus on what it will take to make them a commercial success. The academic success of polymer and organic solar cells far outweigh any other solar cell technology when judging by the number of scientific publications whereas the application of polymer and organic solar cells in real products is completely lacking. This aspect is viewed as a sign of the polymer and organic solar cell field as being more complex and less mature and it raises the question of whether an organic analog to a successful inorganic technology is forcibly needed and indeed whether it is at all worth exploring beyond academia.

Frederik C. Krebs; Mikkel Jrgensen

2013-01-01T23:59:59.000Z