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Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Thin Film Solar Technologies | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Name: Thin Film Solar Technologies Place: South Africa Product: Producers of thin-film copper, indium, gallium, sulphur, selenium modules....

2

Modeling and control of thin film surface morphology: application to thin film solar cells  

E-Print Network [OSTI]

materials, thin film solar cell technology stands to benefitThin-film solar cells: Review of materials, technologies and

Huang, Jianqiao

2012-01-01T23:59:59.000Z

3

Thin film solar energy collector  

DOE Patents [OSTI]

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

1983-11-22T23:59:59.000Z

4

Plasmonic Thin-Film Solar Cells  

Science Journals Connector (OSTI)

A combined computational-experimental study optimizing plasmon-enhanced absorption in thin film solar cells presented. We investigate the effect of different geometries where...

Pala, Ragip; White, Justin; Brongersma, Mark

5

Thin films for solar control applications  

Science Journals Connector (OSTI)

...properly cited. Thin films for solar control applications Sapna Shrestha...performance of vacuum glazing. Solar Energy 81, 8. ( doi:10...mirrors produced by plasma ion assisted deposition. J. Non-Cryst...and cost of vacuum glazing. Solar Energy 55, 151. ( doi:10...

2010-01-01T23:59:59.000Z

6

Thin film absorber for a solar collector  

DOE Patents [OSTI]

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, William G. (Cutchogue, NY)

1985-01-01T23:59:59.000Z

7

Metal Nanoparticles Enhanced Optical Absorption in Thin Film Solar Cells  

Science Journals Connector (OSTI)

The plasmonic enhanced absorption for thin film solar cells with silver nanoparticles (NPs) deposited on top of the amorphous silicon film (a-Si:H) solar cells and embedded inside the...

Xie, Wanlu; Liu, Fang; Qu, Di; Xu, Qi; Huang, Yidong

8

Nanoarrays for Light Management in Thin Film Solar Cells  

Science Journals Connector (OSTI)

We report the use of plasmonic and photonic nanoarray to achieve light management in thin film solar cells. Theoretical and experimental data will be presented.

Ji, Jin; Nasr, Magued B; McCutcheon, Murray W; Herring, Cy

9

Low-Cost Light Weigh Thin Film Solar Concentrators  

Broader source: Energy.gov (indexed) [DOE]

Light Weight Thin Film Solar Concentrators PI: Gani B. Ganapathi (JPLCaltech) Other Contributors: L'Garde: Art Palisoc, Gyula Greschik, Koorosh Gidanian JPL: Bill Nesmith,...

10

Modeling of thin-film solar thermoelectric generators  

E-Print Network [OSTI]

Recent advances in solar thermoelectric generator (STEG) performance have raised their prospect as a potential technology to convert solar energy into electricity. This paper presents an analysis of thin-film STEGs. ...

Weinstein, Lee Adragon

11

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

12

Laser scribing of CIGS based thin films solar cells  

Science Journals Connector (OSTI)

Laser scribing tests on CIGS based thin films solar cells have been performed. The obtained high quality incisions show that laser scribing is a valuable tool for producing low-cost...

Sozzi, Michele; Menossi, Daniele; Bosio, Alessio; Cucinotta, Annamaria; Romeo, Nicola; Selleri, Stefano

13

A Review of Thin Film Silicon for Solar Cell Applications  

E-Print Network [OSTI]

A Review of Thin Film Silicon for Solar Cell Applications May 99 Contents 1 Introduction 3 2 Low 2.2.3 Deposition onto foreign substrates with the intention of improving crystallographic nature Field Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 11

14

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network [OSTI]

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

15

Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell  

E-Print Network [OSTI]

We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

Li, Tong; Jiang, Chun

2010-01-01T23:59:59.000Z

16

Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics  

E-Print Network [OSTI]

nanowire networks as window layers in thin film solar cells.window layer for fully solution-deposited thin filmITO) thin films by silver nanowire composite window layers

Chung, Choong-Heui

2012-01-01T23:59:59.000Z

17

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

Sites, James R.

18

Focused ion beam specimen preparation for electron holography of electrically biased thin film solar cells  

E-Print Network [OSTI]

, biased TEM specimen, thin film solar cell, FIB Thin films of hydrogenated Si (Si:H) can be used as active for electron holography of a thin film solar cell using conventional lift-out specimen preparation and a homeFocused ion beam specimen preparation for electron holography of electrically biased thin film

Dunin-Borkowski, Rafal E.

19

Ultra-Thin Metal Films for Enhanced Solar Absorption  

E-Print Network [OSTI]

This paper presents modelled results for optical absorption in ultra-thin films of nickel, gold and silver over the solar spectrum. It is found in the case of nickel there is an optimum thickness for maximum solar absorption around 10-13nm. This effect is not observed for gold or silver. It is postulated that this is an interference effect occurring due the particular real and imaginary refractive profile of nickel across the solar spectrum.

Ahmad, N; Teng, M; Cryan, M J

2012-01-01T23:59:59.000Z

20

Trend Detection on Thin-Film Solar Cell Technology Using Cluster Analysis and Modified Data Crystallization  

Science Journals Connector (OSTI)

Thin-film solar cell, one of green energies, is growing ... . To detect the potential trends of this technology is essential for companies and relevant industries ... patterns, the potential trends of thin-film solar

Tzu-Fu Chiu; Chao-Fu Hong; Yu-Ting Chiu

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network [OSTI]

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell hal-00749873,version1-25Nov shortage until 2010. Research on epitaxial growth for thin film crystalline silicon solar cells has gained

22

Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova*  

E-Print Network [OSTI]

1 Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova* , I be minimized throughout the fabrication process. Amorphous silicon thin-film transistors and solar cells, thin-film transistor, solar cell, flexible electronics Phone: (609) 258-4626, Fax: (609) 258-3585, E

23

EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS  

E-Print Network [OSTI]

EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS Yun Seog Lee 1; * Corresponding author: buonassisi@mit.edu; ABSTRACT We investigate earth abundant materials for thin- film solar cuprous oxide (Cu2O) as a prototype candidate for investigation as an absorber layer in thin film solar

Ceder, Gerbrand

24

Plasmonic enhancement of thin-film solar cells using gold-black C.J. Fredricksena  

E-Print Network [OSTI]

Plasmonic enhancement of thin-film solar cells using gold-black coatings C.J. Fredricksena , D. R thin-film amorphous-silicon solar cells enhance the short-circuit current by 20% over a broad spectrum and locally enhance the field strength. Keywords: plasmonics, thin-film, solar cell, metallic nanoparticles

Peale, Robert E.

25

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell  

E-Print Network [OSTI]

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic­4]. In this context, a basic idea is to periodically texture the metallic back reflector of a thin-film solar cell

26

Extended light scattering model incorporating coherence for thin-film silicon solar cells  

E-Print Network [OSTI]

Extended light scattering model incorporating coherence for thin-film silicon solar cells Thomas film solar cells. The model integrates coherent light propagation in thin layers with a direct, non potential for light trapping in textured thin film silicon solar cells. VC 2011 American Institute

Lenstra, Arjen K.

27

Metal-black scattering centers to enhance light harvesting by thin-film solar cells  

E-Print Network [OSTI]

Metal-black scattering centers to enhance light harvesting by thin-film solar cells Deep Panjwania as scattering centers to increase the effective optical thickness of thin-film solar cells. The particular type. Gold-black was deposited on commercial thin-film solar cells using a thermal evaporator in nitrogen

Peale, Robert E.

28

Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells  

E-Print Network [OSTI]

Thin-film silicon solar cell technology," Progress insolar cells: modeling, materials and device technology.technologies competitive with traditional wafer based solar cells,

Deceglie, Michael G.

2014-01-01T23:59:59.000Z

29

LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle  

E-Print Network [OSTI]

LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle Physics response map, was developed and used to map defects in thin-film solar cells [4]. Improvements to the two) measurements are providing a direct link between the spatial non-uniformities inherent in thin-film

Sites, James R.

30

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network [OSTI]

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell #12;2 1. Introduction: martin.labrune@polytechnique.edu ABSTRACT We report on heterojunction solar cells whose thin intrinsic

31

Photon Management in Thin Film Solar Cells  

Science Journals Connector (OSTI)

We analyze the absorption enhancement in single and tandem solar-cells comprising nanostructures that increase the path of the photons inside the solar cell. For this purpose we...

Rockstuhl, Carsten; Fahr, Stephan; Paul, Thomas; Menzel, Christoph; Bittkau, Karsten; Beckers, Thomas; Carius, Reinhard; Lederer, Falk

32

Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell  

E-Print Network [OSTI]

Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell J. Grandidier on top of a solar cell can enhance light absorption and therefore increase its efficiency. Freely photocurrent of the solar cell. On a typical thin film amorphous silicon solar cell, a parametric analysis

Atwater, Harry

33

High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing  

E-Print Network [OSTI]

One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

34

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

SciTech Connect (OSTI)

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

35

Solar Thin Films Inc formerly American United Global Inc | Open Energy  

Open Energy Info (EERE)

Films Inc formerly American United Global Inc Films Inc formerly American United Global Inc Jump to: navigation, search Name Solar Thin Films Inc (formerly American United Global Inc) Place New York, New York Zip 10038 Sector Solar Product A US-based solar manufacturing equipment supplier. References Solar Thin Films Inc (formerly American United Global Inc)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Thin Films Inc (formerly American United Global Inc) is a company located in New York, New York . References ↑ "Solar Thin Films Inc (formerly American United Global Inc)" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Thin_Films_Inc_formerly_American_United_Global_Inc&oldid=351338

36

Thin film solar cell including a spatially modulated intrinsic layer  

DOE Patents [OSTI]

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

1989-03-28T23:59:59.000Z

37

Dielectric back scattering patterns for light trapping in thin-film Si solar cells  

E-Print Network [OSTI]

Dielectric back scattering patterns for light trapping in thin-film Si solar cells M. van Lare,1 of dielectric and metallic backscattering patterns in thin-film a-Si:H solar cells. We compare devices. Zhu, C.-M. Hsu, Z. Yu, S. Fan, and Y. Cui, "Nanodome solar cells with efficient light management

Polman, Albert

38

Technological assessment of light-trapping technology for thin-film Si solar cell.  

E-Print Network [OSTI]

??The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was (more)

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

39

Using Localized Plasmon Resonances to Enhance Absorption Efficiency in Thin-film Organic Solar Cells  

Science Journals Connector (OSTI)

We propose the use of localized surface plasmon modes excited by square metallic gratings to enhance the optical absorption of thin-film organic solar cells. Broadband absorption...

Le, Khai Q; Abass, Aimi; Maes, Bjorn; Bienstman, Peter; Alu, Andrea

40

Overview and Challenges of Thin Film Solar Electric Technologies  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and Challenges of Thin and Challenges of Thin Film Solar Electric Technologies H.S. Ullal Presented at the World Renewable Energy Congress X and Exhibition 2008 Glasgow, Scotland, United Kingdom July 19-25, 2008 Conference Paper NREL/CP-520-43355 December 2008 NOTICE The submitted manuscript has been offered by an employee of the Alliance for Sustainable Energy, LLC (ASE), a contractor of the US Government under Contract No. DE-AC36-08-GO28308. Accordingly, the US Government and ASE retain a nonexclusive royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for US Government purposes. This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer  

E-Print Network [OSTI]

Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric current gain obtained...

Lu, Tianlin

2012-07-16T23:59:59.000Z

42

Impurity and back contact effects on CdTe/CdS thin film solar cells.  

E-Print Network [OSTI]

??CdTe/CdS thin film solar cells are the most promising cost-effective solar cells. The goal of this project is to improve the performance for CdS/CdTe devices (more)

Zhao, Hehong

2008-01-01T23:59:59.000Z

43

Photovoltaics, solar energy materials & thin films-IMRC 2006, Cancun, Mexico: Selected papers  

Science Journals Connector (OSTI)

The International symposium Photovoltaics, Solar Energy Materials & Thin Films was held in Cancun, Mexico from 20 to 24 August 2006. More...2 solar cells; and material characterization. A good...2 and the devic...

Xavier Mathew

2007-11-01T23:59:59.000Z

44

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network [OSTI]

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

45

Nano-photonic Light Trapping In Thin Film Solar Dennis M. Callahan Jr.  

E-Print Network [OSTI]

Nano-photonic Light Trapping In Thin Film Solar Cells Thesis by Dennis M. Callahan Jr. In Partial. Jeremy Munday for helping me get started on the thin-film GaAs project and for all the time we spent to thank Dr. Jonathan Grandidier for working closely with me for a couple years on the nano sphere solar

Winfree, Erik

46

Comparison of Ag and SiO2 Nanoparticles for Light Trapping Applications in Silicon Thin Film Solar Cells  

Science Journals Connector (OSTI)

Comparison of Ag and SiO2 Nanoparticles for Light Trapping Applications in Silicon Thin Film Solar Cells ... Department

Martin Theuring; Peng Hui Wang; Martin Vehse; Volker Steenhoff; Karsten von Maydell; Carsten Agert; Alexandre G. Brolo

2014-09-10T23:59:59.000Z

47

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network [OSTI]

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

48

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a  

E-Print Network [OSTI]

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a J. D. Servaites thin-film solar cell types: hydrogenated amorphous silicon a-Si:H p-i-n cells, organic bulk understanding of thin film solar cell device physics, including important module performance variability issues

Alam, Muhammad A.

49

Enhancement of optical absorption in thin-film organic solar cells through the excitation of plasmonic modes in metallic gratings  

E-Print Network [OSTI]

Enhancement of optical absorption in thin-film organic solar cells through the excitation 2010 We theoretically investigate the enhancement of optical absorption in thin-film organic solar.1063/1.3377791 Thin-film organic solar cells OSCs are a promising candidate for low-cost energy conversion.1­6 However

Veronis, Georgios

50

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network [OSTI]

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells Company has had a conti- nuous effort on thin film solar cells for the past four and a half years

Paris-Sud XI, Université de

51

Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High efficiency and junction property  

E-Print Network [OSTI]

Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High-conductor-free organic lead iodide thin film solar cells have been fabricated with a sequential deposition method are comparable to that of the high-efficiency thin-film solar cells. VC 2014 AIP Publishing LLC. [http

Wang, Wei Hua

52

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology  

Broader source: Energy.gov (indexed) [DOE]

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Program Manager, Solar Program Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be using technology pioneered at the Department of Energy's National Renewable Energy Lab (NREL). The record-breaking Cadmium-Telluride (CdTe) thin film photovoltaic technology GE has chosen for its solar panels was originally developed more than a decade ago by a team of scientists led by NREL's Xuanzhi Wu, and

53

CARRIER COLLECTION IN THIN-FILM CDTE SOLAR CELLS: THEORY AND EXPERIMENT  

E-Print Network [OSTI]

-n junction solar cell theory predicts that the total solar cell current in the light, JLCARRIER COLLECTION IN THIN-FILM CDTE SOLAR CELLS: THEORY AND EXPERIMENT A.E. Delahoy, Z. Cheng and K.K. Chin Department of Physics, Apollo Solar Energy Research Center, New Jersey Institute

54

1. INTRODUCTION Polycrystalline CdTe thin films solar cells have shown long  

E-Print Network [OSTI]

to the solar panel that can be adapted to any kind of shape and is easy to deploy in space. We have developed1. INTRODUCTION Polycrystalline CdTe thin films solar cells have shown long term stable performance for the solar cell, therefore high specific power (ratio of out- put power to the weight) solar cells

Romeo, Alessandro

55

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa  

E-Print Network [OSTI]

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa , Alessio in the fabrication of high efficiency CdTe/CdS thin film solar cells. Usually, it is done first by etching the Cd: Back Contact, CdTe, Thin Film 1 INTRODUCTION The back contact in the CdTe/CdS thin film solar cell

Romeo, Alessandro

56

Enhanced quantum efficiency of amorphous silicon thin film solar cells with the inclusion of a rear-reflector thin film  

SciTech Connect (OSTI)

We investigated the growth mechanism of amorphous silicon thin films by implementing hot-wire chemical vapor deposition and fabricated thin film solar cell devices. The fabricated cells showed efficiencies of 7.5 and 8.6% for the samples without and with the rear-reflector decomposed by sputtering, respectively. The rear-reflector enhances the quantum efficiency in the infrared spectral region from 550 to 750?nm. The more stable quantum efficiency of the sample with the inclusion of a rear-reflector than the sample without the rear-reflector due to the bias effect is related to the enhancement of the short circuit current.

Park, Seungil [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Yong Ji, Hyung; Jun Kim, Myeong; Hyeon Peck, Jong [Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Kim, Keunjoo, E-mail: kimk@chonbuk.ac.kr [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2014-02-17T23:59:59.000Z

57

DISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

-scale problems such as energy demand, pollution, and environment safety. The cost ($/kWh) is the primaryDISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS AND MODULES WITH 2-D-FILM SOLAR CELLS AND MODULES WITH 2-D SIMULATIONS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS

Sites, James R.

58

Design of plasmonic back structures for efficiency enhancement of thin-film amorphous Si solar cells  

Science Journals Connector (OSTI)

Metallic back structures with one-dimensional periodic nanoridges attached to a thin-film amorphous Si (a-Si) solar cell are numerically studied. At the interfaces between a-Si and...

Bai, Wenli; Gan, Qiaoqiang; Bartoli, Filbert; Zhang, Jing; Cai, Likang; Huang, Yidong; Song, Guofeng

2009-01-01T23:59:59.000Z

59

Plasmonic Back Structures Designed for Efficiency Enhancement of Thin Film Solar Cells  

Science Journals Connector (OSTI)

Metallic back structures with one-dimensional periodic nanoridges attached to thin-film amorphous silicon (a-Si) solar cell are proposed to enhance the cell efficiency in a wide...

Bai, Wenli; Gan, Qiaoqiang; Bartoli, Filbert; Song, Guofeng

60

Nanoscale Materials for Thin Film Cu(In,Ga)Se2 Solar Cells  

Science Journals Connector (OSTI)

Cu(In,Ga)Se2 solar cells show the highest efficiencies of all thin film technologies. Nano-particulate precursor materials could have the potential to lead this technology to...

Ahlswede, Erik

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Electron-reflector strategy for CdTe thin-film solar cells.  

E-Print Network [OSTI]

??The CdTe thin-film solar cell has a large absorption coefficient and high theoretical efficiency. Moreover, large-area photovoltaic panels can be economically fabricated. These features potentially (more)

Hsiao, Kuo-Jui

2010-01-01T23:59:59.000Z

62

Earth-Abundant Materials for High-Efficiency Heterojunction Thin Film Solar Cells  

Science Journals Connector (OSTI)

We investigate materials for thin film solar cells that can meet tens of terawatts level deployment potential. As one of the candidates, cuprous oxide (Cu2O) is synthesized and...

Lee, Yun Seog; Bertoni, Mariana; Buonassisi, Tonio

63

Polycrystalline silicon thin-film solar cells on glass by ion-assisted deposition.  

E-Print Network [OSTI]

??Polycrystalline silicon (pc-Si, grain size > 1??m, no amorphous tissue) on glass is an interesting material for thin-film solar cells due to the low costs, (more)

Straub, Axel

2005-01-01T23:59:59.000Z

64

Technological assessment of light-trapping technology for thin-film Si solar cell  

E-Print Network [OSTI]

The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was analyzed from the technology, market, and ...

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

65

Integrated photonic structures for light trapping in thin-film Si solar cells  

E-Print Network [OSTI]

We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

Sheng, Xing

66

Rapid Deposition Technology Holds the Key for the World's Largest Manufacturer of Thin-Film Solar Modules (Fact Sheet)  

SciTech Connect (OSTI)

First Solar, Inc. has been collaborating with NREL since 1991, advancing its thin-film cadmium telluride solar technology to grow from a startup company to become one of the world's largest manufacturers of solar modules, and the world's largest manufacturer of thin-film solar modules.

Not Available

2013-08-01T23:59:59.000Z

67

Near perfect solar absorption in ultra-thin-film GaAs photonic crystals  

E-Print Network [OSTI]

Near perfect solar absorption in ultra-thin-film GaAs photonic crystals Sergey Eyderman,*a Alexei Deinegaa and Sajeev Johnab We present designs that enable a significant increase of solar absorption­99.5% solar absorption is demonstrated depending on the photonic crystal architecture used and the nature

John, Sajeev

68

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY  

E-Print Network [OSTI]

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION, A. N. Tiwari Thin Film Physics Group, Laboratory for Solid State Physics, Technopark ETH-Building, Technoparkstr. 1, CH-8005 Zurich, Switzerland ABSTRACT: CdTe/CdS thin £lm solar cells have been grown by closed

Romeo, Alessandro

69

Transfer Printing Methods for Flexible Thin Film Solar Cells: Basic Concepts and Working Principles  

Science Journals Connector (OSTI)

Thin film solar cells (TFSCs) that are fabricated on flexible substrates, such as plastics, paper, and fabrics, will significantly broaden the applications of solar cells, ranging from wearable solar chargers for portable electronics, building-integrated photovoltaics on sidewalls and curved rooftops, to lightweight solar cells for aerospace and space applications. ... Our study shows that photovoltaic tiles can combine energy generation with architectural aesthetics leading to significant implications for advancement in building integrated photovoltaics. ...

Chi Hwan Lee; Dong Rip Kim; Xiaolin Zheng

2014-09-03T23:59:59.000Z

70

Tax Credits Give Thin-Film Solar a Big Boost | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Tax Credits Give Thin-Film Solar a Big Boost Tax Credits Give Thin-Film Solar a Big Boost Tax Credits Give Thin-Film Solar a Big Boost October 18, 2010 - 2:00pm Addthis MiaSolé will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.| Photo courtesy of MiaSolé MiaSolé will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.| Photo courtesy of MiaSolé Lorelei Laird Writer, Energy Empowers What are the key facts? MiaSolé adding more than ten times its current manufacturing capacity Company expects to double or triple its workforce with expansion Expansion is funded by $101 million in Recovery Act tax credit For MiaSolé, a relative newcomer to the solar energy market, 2010 has been

71

Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells  

E-Print Network [OSTI]

of solar energy conversion be- cause they use thin films of photoactive material and can be manufactured achieving complete optical absorption and good carrier transport. A photoactive film thickness of 200 nm charge transport to allow for complete carrier extraction. To address this trade-off, absorption en

Fan, Shanhui

72

Enhanced Efficiency of Light-Trapping Nanoantenna Arrays for Thin Film Solar Cells  

E-Print Network [OSTI]

We suggest a novel concept of efficient light-trapping structures for thin-film solar cells based on arrays of planar nanoantennas operating far from plasmonic resonances. The operation principle of our structures relies on the excitation of chessboard-like collective modes of the nanoantenna arrays with the field localized between the neighboring metal elements. We demonstrated theoretically substantial enhancement of solar-cell short-circuit current by the designed light-trapping structure in the whole spectrum range of the solar-cell operation compared to conventional structures employing anti-reflecting coating. Our approach provides a general background for a design of different types of efficient broadband light-trapping structures for thin-film solar-cell technologically compatible with large-area thin-film fabrication techniques.

Simovski, Constantin R; Voroshilov, Pavel M; Guzhva, Michael E; Belov, Pavel A; Kivshar, Yuri S

2013-01-01T23:59:59.000Z

73

Flexible Solar-Energy Harvesting System on Plastic with Thin-film LC Oscillators Operating Above ft for  

E-Print Network [OSTI]

Flexible Solar-Energy Harvesting System on Plastic with Thin-film LC Oscillators Operating Above ft- This paper presents an energy-harvesting system consisting of amorphous-silicon (a-Si) solar cells and thin of the energy-harvesting system. The solar module consists of solar cells in series operating at an output

74

Thin silicon solar cells  

SciTech Connect (OSTI)

The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M. [Astro Power Inc., Solar Park, Newark, DE (United States)

1992-12-01T23:59:59.000Z

75

NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)  

SciTech Connect (OSTI)

Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

Not Available

2012-09-01T23:59:59.000Z

76

Indium doped zinc oxide nanowire thin films for antireflection and solar absorber coating applications  

SciTech Connect (OSTI)

Indium doped ZnO nanowire thin films were prepared by thermal oxidation of Zn-In metal bilayer films at 500C. The ZnO:In nanowires are 20-100 nm in diameter and several tens of microns long. X-ray diffraction patterns confirm the formation of oxide and indicate that the films are polycrystalline, both in the as deposited and annealed states. The transmission which is <2% for the as deposited Zn-In films increases to >90% for the ZnO:In nanowire films. Significantly, the reflectance for the as deposited films is < 10% in the region between 200 to 1500 nm and < 2% for the nanowire films. Thus, the as deposited films can be used solar absorber coatings while the nanowire films are useful for antireflection applications. The growth of nanowires by this technique is attractive since it does not involve very high temperatures and the use of catalysts.

Shaik, Ummar Pasha [ACRHEM, University of Hyderabad, Hyderabad-500046 (India); Krishna, M. Ghanashyam, E-mail: mgksp@uohyd.ac.in [ACRHEM and School of Physics, University of Hyderabad, Hyderabad-500046 (India)

2014-04-24T23:59:59.000Z

77

Novel wide band gap materials for highly efficient thin film tandem solar cells  

SciTech Connect (OSTI)

Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PVâ??s goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a mixture of solution and physical vapor deposition processing, but these films lacked the p-type doping levels that are required to make decent solar cells. Over the course of the project PLANT PV was able to fabricate efficient CIGS solar cells (8.7%) but could not achieve equivalent performance using AIGS. During the nine-month grant PLANT PV set up a variety of thin film characterization tools (e.g. drive-level capacitance profiling) at the Molecular Foundry, a Department of Energy User Facility, that are now available to both industrial and academic researchers via the grant process. PLANT PV was also able to develop the back end processing of thin film solar cells at Lawrence Berkeley National Labs to achieve 8.7% efficient CIGS solar cells. This processing development will be applied to other types of thin film PV cells at the Lawrence Berkeley National Labs. While PLANT PV was able to study AIGS film growth and optoelectronic properties we concluded that AIGS produced using these methods would have a limited efficiency and would not be commercially feasible. PLANT PV did not apply for the Phase II of this grant.

Brian E. Hardin, Stephen T. Connor, Craig H. Peters

2012-06-11T23:59:59.000Z

78

Structural and chemical investigations of CBD-and PVD-CdS buffer layers and interfaces in Cu(In,Ga)Se2-based thin film solar cells  

E-Print Network [OSTI]

(In,Ga)Se2-based thin film solar cells D. Abou-Rasa,b,*, G. Kostorza , A. Romeob,1 , D. Rudmannb , A Available online 8 December 2004 Abstract It is known that high-efficiency thin film solar cells based on Cu; Chemical bath deposition; CdS buffer 1. Introduction The highest efficiencies for thin film solar cells

Romeo, Alessandro

79

Modeling and control of thin film surface morphology: application to thin film solar cells  

E-Print Network [OSTI]

Conference on Photovoltaic Energy Conversion. Conference17th European Photovoltaic Solar Energy Conference, 0:11,

Huang, Jianqiao

2012-01-01T23:59:59.000Z

80

Parallel FDTD Simulation of Photonic Crystals and Thin-Film Solar Cells  

Science Journals Connector (OSTI)

Finite difference time domain (FDTD) method is a robust and accurate algorithm which is widely used in computational electromagnetic field and the simulation of optical phenomenon. In this paper, parallel FDTD based on overlapped domain decomposition ... Keywords: finite difference time domain method, parallel, photonic crystal, thin-film solar cell, quantum efficiency

Wu Wang; Xuebin Chi; Yangde Feng; Yonghua Zhao

2012-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Disorder improves nanophotonic light trapping in thin-film solar cells  

SciTech Connect (OSTI)

We present a systematic experimental study on the impact of disorder in advanced nanophotonic light-trapping concepts of thin-film solar cells. Thin-film solar cells made of hydrogenated amorphous silicon were prepared on imprint-textured glass superstrates. For periodically textured superstrates of periods below 500?nm, the nanophotonic light-trapping effect is already superior to state-of-the-art randomly textured front contacts. The nanophotonic light-trapping effect can be associated to light coupling to leaky waveguide modes causing resonances in the external quantum efficiency of only a few nanometer widths for wavelengths longer than 500?nm. With increasing disorder of the nanotextured front contact, these resonances broaden and their relative altitude decreases. Moreover, overall the external quantum efficiency, i.e., the light-trapping effect, increases incrementally with increasing disorder. Thereby, our study is a systematic experimental proof that disorder is conceptually an advantage for nanophotonic light-trapping concepts employing grating couplers in thin-film solar cells. The result is relevant for the large field of research on nanophotonic light trapping in thin-film solar cells which currently investigates and prototypes a number of new concepts including disordered periodic and quasi periodic textures.

Paetzold, U. W., E-mail: u.paetzold@fz-juelich.de; Smeets, M.; Meier, M.; Bittkau, K.; Merdzhanova, T.; Smirnov, V.; Carius, R.; Rau, U. [IEK5Photovoltaik, Forschungszentrum Jlich GmbH, 52425 Jlich (Germany); Michaelis, D.; Waechter, C. [Fraunhofer Institut fr Angewandte Optik und Feinmechanik, Albert Einstein Str. 7, D-07745 Jena (Germany)

2014-03-31T23:59:59.000Z

82

Thin Film Photovoltaics Research  

Broader source: Energy.gov [DOE]

The U.S. Department of Energy (DOE) supports research and development of four thin-film technologies on the path to achieving cost-competitive solar energy, including:

83

The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1  

E-Print Network [OSTI]

1 The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1 , T.A. Gessert2 of Cu impurity inclusion in CdTe thin film solar cells, such as degradation caused by Cu diffusion , and Su-Huai Wei2 1 Department of Physics and Apollo CdTe Solar Energy Research Center, NJIT, Newark, NJ

84

Microcrystalline SiGe Absorber Layers in Thin-film Silicon Solar Cells  

Science Journals Connector (OSTI)

Abstract We report on physical properties of microcrystalline silicon-germanium (?c-SiGe:H) absorber layers for the use as a bottom structure in silicon based multijunction thin-film solar cells. Due to incorporation of Ge the absorption of the film is enhanced compared to pure ?c-Si:H films. This provides the opportunity to significantly reduce the absorber layer thickness. The experiments were carried out in a 13.56MHz PECVD reactor using germane, silane and hydrogen as process gases. Single layers were characterized for their optical and electrical properties. Results from single and multijunction solar cells using a ?c- SiGe:H absorbers will be shown. In tandem solar cells a reduction of about 60% of the absorber layer thickness could be reached by using SiGe alloys compared to pristine silicon tandem cells.

K.V. Maydell; K. Grunewald; M. Kellermann; O. Sergeev; P. Klement; N. Reininghaus; T. Kilper

2014-01-01T23:59:59.000Z

85

Angular behavior of the absorption limit in thin film silicon solar cells  

E-Print Network [OSTI]

We investigate the angular behavior of the upper bound of absorption provided by the guided modes in thin film solar cells. We show that the 4n^2 limit can be potentially exceeded in a wide angular and wavelength range using two-dimensional periodic thin film structures. Two models are used to estimate the absorption enhancement; in the first one, we apply the periodicity condition along the thickness of the thin film structure but in the second one, we consider imperfect confinement of the wave to the device. To extract the guided modes, we use an automatized procedure which is established in this work. Through examples, we show that from the optical point of view, thin film structures have a high potential to be improved by changing their shape. Also, we discuss the nature of different optical resonances which can be potentially used to enhance light trapping in the solar cell. We investigate the two different polarization directions for one-dimensional gratings and we show that the transverse magnetic pola...

Naqavi, Ali; Sderstrm, Karin; Battaglia, Corsin; Paeder, Vincent; Scharf, Toralf; Herzig, Hans Peter; Ballif, Christophe

2013-01-01T23:59:59.000Z

86

Advanced polycrystalline silicon thin film solar cells using high rate plasma enhanced chemical vapour deposited amorphous silicon on textured glass.  

E-Print Network [OSTI]

??Solid phase crystallized polycrystalline silicon (poly-Si) thin-film solar cell on glass is an emerging Photovoltaics (PV) technology combining the robustness of crystalline Si material with (more)

Jin, Guangyao

2010-01-01T23:59:59.000Z

87

Low-cost, deterministic quasi-periodic photonic structures for light trapping in thin film silicon solar cells  

E-Print Network [OSTI]

Light trapping has been an important issue for thin film silicon solar cells because of the low absorption coefficient in the near infrared range. In this paper, we present a photonic structure which combines anodic aluminum ...

Sheng, Xing

88

Ion beam assisted sputter deposition of ZnO for silicon thin-film solar cells  

Science Journals Connector (OSTI)

Ion beam assisted deposition (IBAD) is a promising technique for improving the material quality of ZnO-based thin films. The operation of an auxiliary Ar+ ion source during deposition of ZnO?:?Ga thin films by dc magnetron sputtering led to an improvement in crystalline texture, especially at low temperatures due to momentum transfer from the ions to the growing film. Etching of IBAD-ZnO?:?Ga films in diluted HCl revealed crater-like surface structures with crater diameters of up to 600nm. These structures are usually achieved after deposition at high substrate temperatures. This is an indication that the grain structure was remarkably changed by bombarding these films during deposition in terms of increasing the compactness of the ZnO?:?Ga films. Subsequent annealing procedures led to an improvement in the electrical and optical properties. Hydrogenated microcrystalline silicon (c-Si?:?H) solar cells exhibited enhanced efficiency as compared to cells on other low-temperature sputtered reference ZnO films. This improvement was ascribed to light trapping by the modified etching behaviour of the IBAD-ZnO?:?Ga films as well as improved transparency after the vacuum annealing step.

M Warzecha; D Khl; M Wuttig; J Hpkes

2014-01-01T23:59:59.000Z

89

Low-Cost Light Weigh Thin Film Solar Concentrators  

Broader source: Energy.gov [DOE]

This presentation was delivered at the SunShot Concentrating Solar Power (CSP) Program Review 2013, held April 2325, 2013 near Phoenix, Arizona.

90

Boron arsenide thin film solar cell development. Final report  

SciTech Connect (OSTI)

Pyrolytic decomposition of diborane and arsine has been used in attempts to grow polycrystalline BAs films. This method, however, produced only amorphous films for deposition temperatures below 920/sup 0/C and polycrystalline boron subarsenide (B/sub 12/As/sub 2/) flms for deposition temperatures above this value. The amorphous films have been determined to have a significant arsenic content but the actual stoichiometry was not obtained. The films were adherent on single crystal sapphire (0001), (111) silicon, (0001) SiC, and polycrystalline SiC but were found not to be adherent to substrates of fused quartz, tungsten, and molybdenum. It was also found that all films deposited above 650/sup 0/C were p-type while those deposited below 600/sup 0/C were usually n-type. Polycrystalline BAs and B/sub 12/As/sub 2/ was produced by reaction of the elements in a closed tube. The amorphous films showed an indirect or non-direct optical bandgap from 1.0 to 1.7 eV with the most probable values between 1.2 to 1.4 eV. The crystalline BAs powder shows a bandgap near 1.0 eV. Photoconductance time constants have been measured for films deposited on (0001) sapphire and (0001) SiC. Attempts at doping the amorphous films were generally unsuccessful. A polycrystalline powder sample was successfully doped with sulfur. Attempts were made to produce a Schottky barrier diode by evaporating Al dots onto an amorphous film on graphite without a post-evaporation anneal. An MIS structure was also attempted by baking an amorphous film in air at 280/sup 0/C before evaporation of aluminum. Although nonlinear characteristics were obtained, none of the devices showed any photovoltaic response. A p-type amorphous film was deposited on an n-type silicon substrate to form a p-n heterojunction. This device did exhibit a photovoltaic response but it is believed that the photogeneration was occurring primarily in the silicon substrate.

Boone, J.L.; Van Doren, T.P.

1980-09-01T23:59:59.000Z

91

Holographic Thin Film System for Multijunction Solar Cells  

Science Journals Connector (OSTI)

The efficiency of photovoltaic generators based on different semiconductor materials with optimized band gaps can achieve considerably higher values than those obtained with single junction solar cells. For th...

W. H. Bloss; M. Griesinger; E. R. Reinhardt

1983-01-01T23:59:59.000Z

92

First-Principles Study of Back Contact Effects on CdTe Thin Film Solar Cells  

SciTech Connect (OSTI)

Forming a chemically stable low-resistance back contact for CdTe thin-film solar cells is critically important to the cell performance. This paper reports theoretical study of the effects of the back-contact material, Sb{sub 2}Te{sub 3}, on the performance of the CdTe solar cells. First-principles calculations show that Sb impurities in p-type CdTe are donors and can diffuse with low diffusion barrier. There properties are clearly detrimental to the solar-cell performance. The Sb segregation into the grain boundaries may be required to explain the good efficiencies for the CdTe solar cells with Sb{sub 2}Te{sub 3} back contacts.

Du, Mao-Hua [ORNL

2009-01-01T23:59:59.000Z

93

An Unconventional Route to High-Efficiency Dye-Sensitized Solar Cells via Embedding Graphitic Thin Films into TiO2 Nanoparticle  

E-Print Network [OSTI]

and impedance spectroscopy. KEYWORDS: Carbon/TiO2 thin film, dye-sensitized solar cells, block copolymer-treated single-wall carbon nanotubes (a-SWCNs) in TiO2 film.37 The a-SWCNs modified solar cell indicated a 25An Unconventional Route to High-Efficiency Dye-Sensitized Solar Cells via Embedding Graphitic Thin

Lin, Zhiqun

94

Thermal Evaporation and Characterization of Sb2Se3 Thin Film for Substrate Sb2Se3/CdS Solar Cells  

Science Journals Connector (OSTI)

Thermal Evaporation and Characterization of Sb2Se3 Thin Film for Substrate Sb2Se3/CdS Solar Cells ... Here we report Sb2Se3 solar cells fabricated from thermal evaporation. ... Sb2Se3; thermal evaporation; thin film; solar cells ...

Xinsheng Liu; Jie Chen; Miao Luo; Meiying Leng; Zhe Xia; Ying Zhou; Sikai Qin; Ding-Jiang Xue; Lu Lv; Han Huang; Dongmei Niu; Jiang Tang

2014-06-12T23:59:59.000Z

95

Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light-scattering substrate  

E-Print Network [OSTI]

Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light://jap.aip.org/about/rights_and_permissions #12;Thin-film silicon triple-junction solar cell with 12.5% stable efficiency on innovative flat light require light-trapping schemes that are predominantly based on depositing the solar cells on rough

Psaltis, Demetri

96

Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells  

E-Print Network [OSTI]

1 Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells, Setagaya-ku, Tokyo 157-8572, Japan (Received ) KEYWORDS: ZnS buffer, Cu(In,Ga)Se2, thin-film solar cells alternative to CdS in polycrystalline thin-film Cu(In1-xGax)Se2 (CIGS) solar cells. Cells with efficiency

Sites, James R.

97

Thin-film solar cells: review of materials, technologies and commercial status  

Science Journals Connector (OSTI)

As apparent from Table1..., showing the production volume for different manufacturers of these thin-film technologies over the past 3years, rapidly-growing ... are also increasing rapidly, the thin-film technologies

Martin A. Green

2007-10-01T23:59:59.000Z

98

On the feasibility of colored glazed thermal solar collectors based on thin film interference filters  

Science Journals Connector (OSTI)

Glazed thermal solar collectors, typically equipped with black, optical selective absorber sheets, exhibit good energy conversion efficiency. However, the black color, and sometimes the visibility of tubes and corrugations of the metal sheets, limit the architectural integration into buildings. In order to overcome this drawback, interference filters are considered as a promising approach. Multilayered thin film stacks deposited on the cover glass can produce a colored reflection hiding the black absorber without a great loss of energy. These interference filters are designed and optimized by numerical simulation. Such coatings are deposited by vacuum processes (e.g. magnetron sputtering) and also via the SolGel method. Optical measurements, such as real-time laser-reflectometry and spectrophotometry, are suitable to determine film thicknesses and optical constants of individual layers, and to measure color coordinates and solar transmittance for the multilayer stacks. Advantages and disadvantages of the different coating processes are discussed.

A. Schler; C. Roecker; J.-L. Scartezzini; J. Boudaden; I.R. Videnovic; R.S.-C. Ho; P. Oelhafen

2004-01-01T23:59:59.000Z

99

Controlling the Texture and Crystallinity of Evaporated Lead Phthalocyanine Thin Films for Near-Infrared Sensitive Solar Cells  

E-Print Network [OSTI]

Controlling the Texture and Crystallinity of Evaporated Lead Phthalocyanine Thin Films for Near-Infrared Sensitive Solar Cells Karolien Vasseur,, Katharina Broch,§ Alexander L. Ayzner, Barry P. Rand, David Cheyns: To achieve organic solar cells with a broadened spectral absorption, we aim to promote the growth of the near

Schreiber, Frank

100

Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence  

SciTech Connect (OSTI)

It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, inline tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint  

SciTech Connect (OSTI)

It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

2011-07-01T23:59:59.000Z

102

DEVELOPMENT OF A NOVEL PRECURSOR FOR THE PREPARATION BY SELENIZATION OF HIGH EFFICIENCY CuInGaSe2/CdS THIN FILM SOLAR CELLS  

E-Print Network [OSTI]

/CdS THIN FILM SOLAR CELLS N. Romeo1 , A. Bosio1 , V. Canevari2 , R. Tedeschi1 , S. Sivelli1 , A. Solar cells prepared by depositing in sequence on top of the CuInGaSe2 film 60 nm of CdS, 100 nm of pure(InGa)Se2, Thin Films, Selenization 1 INTRODUCTION CuInGaSe2 based solar cells exhibit the highest

Romeo, Alessandro

103

CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments  

Office of Scientific and Technical Information (OSTI)

National Renewable Energy Laboratory National Renewable Energy Laboratory Innovation for Our Energy Future A national laboratory of the U.S. Department of Energy Office of Energy Efficiency & Renewable Energy NREL is operated by Midwest Research Institute ● Battelle Contract No. DE-AC36-99-GO10337 Conference Paper NREL/CP-520-37020 January 2005 CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments K. Ramanathan, R.N. Bhattacharya, M.A. Contreras, F.S. Hasoon, J. Abushama, and R. Noufi Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting October 25-28, 2004 Denver, Colorado NOTICE The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under Contract No. DE-AC36-99GO10337. Accordingly, the US

104

Thin Film Solar Cells Derived from Sintered Semiconductor Quantum Dots: Cooperative Research and Development Final Report, CRADA number CRD-07-00226  

SciTech Connect (OSTI)

The NREL/Evident team will develop techniques to fabricate thin film solar cells where the absorption layers comprising the solar cells are derived from sintered semiconductor quantum dots.

Ginley, D. S.

2010-07-01T23:59:59.000Z

105

QUANTIFICATION OF LOSSES IN THIN-FILM CdS/CdTe SOLAR CELLS S.H. Demtsu and J.R. Sites  

E-Print Network [OSTI]

QUANTIFICATION OF LOSSES IN THIN-FILM CdS/CdTe SOLAR CELLS S.H. Demtsu and J.R. Sites Department of Physics, Colorado State University, Fort Collins, CO 80523, USA ABSTRACT Quantification of solar cell Thin-film CdS/CdTe devices have been studied extensively, but some basic underlying properties

Sites, James R.

106

Integrated All-silicon Thin-film Power Electronics on Flexible Sheets For Ubiquitous Wireless Charging Stations based on Solar-energy Harvesting  

E-Print Network [OSTI]

into wireless charging stations. In this work, we combine the thin-film circuits with flexible solar cellsIntegrated All-silicon Thin-film Power Electronics on Flexible Sheets For Ubiquitous Wireless Charging Stations based on Solar-energy Harvesting Liechao Huang, Warren Rieutort-Louis, Yingzhe Hu, Josue

107

Thin film photovoltaic device  

DOE Patents [OSTI]

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

Catalano, A.W.; Bhushan, M.

1982-08-03T23:59:59.000Z

108

Thin film photovoltaic device  

DOE Patents [OSTI]

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

Catalano, Anthony W. (Wilmington, DE); Bhushan, Manjul (Wilmington, DE)

1982-01-01T23:59:59.000Z

109

Dyadic Greens functions of thin films: Applications within plasmonic solar cells  

Science Journals Connector (OSTI)

Optimization and design of silicon solar cells by exploiting light scattering from metal nanoparticles to increase the efficiency is addressed in the small particle limit from a fundamental point of view via the dyadic Greens function formulation. Based on the dyadic Greens function (Greens tensor) of a three-layer geometry, light scattering from electric point dipoles (representing small metal scatterers) located within a thin layer sandwiched between a substrate and a superstrate is analyzed. Starting from the full dyadic Greens function we derive analytical near- and far-field approximations. The far-field approximations enable efficient, exact, and separate evaluation of light scattering into waves that propagate in the substrate or the superstrate. Based on the near-field approximation we present a semianalytical expression for the total near-field absorption in the substrate. The theoretical approach is used to analyze realistic configurations for plasmon-assisted silicon solar cells. We show that by embedding metal nanoscatterers in a thin film with a high refractive index (rutile TiO2 with n?2.5) on top of the silicon, the fraction of scattered light that couples into the solar cell can become larger than 96%, and an optical path length enhancement of more than 100 can be achieved.

Jesper Jung; Thomas Sndergaard; Thomas Garm Pedersen; Kjeld Pedersen; Arne Nylandsted Larsen; Brian Bech Nielsen

2011-02-23T23:59:59.000Z

110

Light trapping in thin-film solar cells measured by Raman spectroscopy  

SciTech Connect (OSTI)

In this study, Raman spectroscopy is used as a tool to determine the light-trapping capability of textured ZnO front electrodes implemented in microcrystalline silicon (?c-Si:H) solar cells. Microcrystalline silicon films deposited on superstrates of various roughnesses are characterized by Raman micro-spectroscopy at excitation wavelengths of 442?nm, 514?nm, 633?nm, and 785?nm, respectively. The way to measure quantitatively and with a high level of reproducibility the Raman intensity is described in details. By varying the superstrate texture and with it the light trapping in the ?c-Si:H absorber layer, we find significant differences in the absolute Raman intensity measured in the near infrared wavelength region (where light trapping is relevant). A good agreement between the absolute Raman intensity and the external quantum efficiency of the ?c-Si:H solar cells is obtained, demonstrating the validity of the introduced method. Applications to thin-film solar cells, in general, and other optoelectronic devices are discussed.

Ledinsk, M., E-mail: ledinsky@fzu.cz [Laboratory of Nanostructures and Nanomaterials, Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Cukrovarnick 10, 162 00 Prague (Czech Republic); Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), cole Polytechnique Fdrale de Lausanne (EPFL), Rue de la Maladire 71b, CH-2000 Neuchtel (Switzerland); Moulin, E.; Bugnon, G.; Meillaud, F.; Ballif, C. [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), cole Polytechnique Fdrale de Lausanne (EPFL), Rue de la Maladire 71b, CH-2000 Neuchtel (Switzerland); Ganzerov, K.; Vetushka, A.; Fejfar, A. [Laboratory of Nanostructures and Nanomaterials, Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Cukrovarnick 10, 162 00 Prague (Czech Republic)

2014-09-15T23:59:59.000Z

111

Advanced Light-Trapping in Thin-Film Silicon Solar Cells  

Science Journals Connector (OSTI)

Light-trapping schemes are essential for high efficiency thin-film Silicon devices. Implementation of various light-trapping/scattering elements will be discussed. An optimum textured...

Wyrsch, Nicolas

112

Design, fabrication and optical characterization of photonic crystal assisted thin film monocrystalline-silicon solar cells  

Science Journals Connector (OSTI)

In this paper, we present the integration of an absorbing photonic crystal within a monocrystalline silicon thin film photovoltaic stack fabricated without epitaxy. Finite difference...

Meng, Xianqin; Depauw, Valrie; Gomard, Guillaume; El Daif, Ounsi; Trompoukis, Christos; Drouard, Emmanuel; Jamois, Ccile; Fave, Alain; Dross, Frdric; Gordon, Ivan; Seassal, Christian

2012-01-01T23:59:59.000Z

113

Alta Devices Develops World Record Setting Thin-Film Solar Cell  

Office of Energy Efficiency and Renewable Energy (EERE)

EERE supported the development of Alta Devices' thin film Gallium Arsenide photovoltaic technology that set a world record for conversion efficiency.

114

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas in Substitution of CdCl2  

E-Print Network [OSTI]

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas delle Scienze, 37/A-43010 Fontanini, Parma, Italy ABSTRACT: CdTe/CdS thin film solar cells have reached in the preparation of high efficiency CdTe/CdS solar cells is the activation treatment of CdTe film. Most research

Romeo, Alessandro

115

High efficiency thin-film crystalline Si/Ge tandem solar cell  

Science Journals Connector (OSTI)

We propose and simulate a photovoltaic solar cell comprised of Si and Ge pn junctions in tandem. With an anti-reflection film at the front surface, we have shown that optimal solar...

Sun, G; Chang, F; Soref, R A

2010-01-01T23:59:59.000Z

116

Theoretical study of the efficiency of CdS/PbS thin film solar cells  

Science Journals Connector (OSTI)

Abstract This work represents a theoretical analysis of a new type of thin film solar cells with structure glass/ITO/CdS/PbS/AL. The transmission spectrum was calculated based on the multi-reflections effect from all cell layers as well as absorption effect in both ITO and CdS layers. The calculations of spectral internal quantum efficiency were carried out based on the front and back surface recombination of PbS layer. The recombination losses in space-charge region were studied. The effect of thickness of the absorber layer on the calculations of short-circuit current density was studied under illumination condition of AM1.5 solar irradiation. The data of open circuit voltage, maximum voltage, maximum current density, fill factor, output power density and efficiency of CdS/PbS solar cell were estimated from the JV characteristics curve under illumination effect. This study ignored the effect of metallic back contact and thus the incomplete absorption losses (transmission losses) take place at thin absorber layer. The obtained results showed that the 2?m thickness of the absorber layer is not sufficient to absorb all the transmitted photons from the window layer (CdS) and the selection of theses thin thicknesses of PbS in order to correspond with experimental implementations of these devices. Both the optical and recombination losses lead to decrease the current density by 82% (JSC=7.28mA/cm2) at thickness 0.5?m of PbS and these losses decreased to 67% (JSC=16mA/cm2) at thickness 2?m. The output power density and the cell efficiency increased with increasing the thickness of effective layer. The maximum cell efficiency of 4.13% was obtained at thickness of 2?m which is considered greater than those obtained experimentally.

H.A. Mohamed

2014-01-01T23:59:59.000Z

117

CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION  

E-Print Network [OSTI]

CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION Barbara Terheiden,1* Thomas Kunz,2 Ingo Burkert2 , Renate Horbelt,1, D-91058 Erlangen, Germany ABSTRACT: Convection assisted chemical vapor deposition (CoCVD) is applied

118

Copper and Transparent-Conductor Reflectarray Elements on Thin-Film Solar Cell Panels  

E-Print Network [OSTI]

This work addresses the integration of reflectarray antennas (RA) on thin film Solar Cell (SC) panels, as a mean to save real estate, weight, or cost in platforms such as satellites or transportable autonomous antenna systems. Our goal is to design a good RA unit cell in terms of phase response and bandwidth, while simultaneously achieving high optical transparency and low microwave loss, to preserve good SC and RA energy efficiencies, respectively. Since there is a trade-off between the optical transparency and microwave surface conductivity of a conductor, here both standard copper and transparent conductors are considered. The results obtained at the unit cell level demonstrates the feasibility of integrating RA on a thin-film SC, preserving for the first time good performance in terms of both SC and RA efficiency. For instance, measurement at X-band demonstrate families of cells providing a phase range larger than 270{\\deg} with average microwave loss of -2.45dB (resp. -0.25dB) and average optical transpa...

Dreyer, Philippe; Nicolay, Sylvain; Ballif, Christophe; Perruisseau-Carrier, Julien

2013-01-01T23:59:59.000Z

119

Spin Coated Plasmonic Nanoparticle Interfaces for Photocurrent Enhancement in Thin Film Si Solar Cells  

E-Print Network [OSTI]

Nanoparticle (NP) arrays of noble metals strongly absorb light in the visible to infrared wavelengths through resonant interactions between the incident electromagnetic field and the metal's free electron plasma. Such plasmonic interfaces enhance light absorption and photocurrent in solar cells. We report a cost effective and scalable room temperature/pressure spin-coating route to fabricate broadband plasmonic interfaces consisting of silver NPs. The NP interface yields photocurrent enhancement (PE) in thin film silicon devices by up to 200% which is significantly greater than previously reported values. For coatings produced from Ag nanoink containing particles with average diameter of 40 nm, an optimal NP surface coverage of 7% was observed. Scanning electron microscopy of interface morphologies revealed that for low surface coverage, particles are well-separated, resulting in broadband PE. At higher surface coverage, formation of particle strings and clusters caused red-shifting of the PE peak and a narro...

Israelowitz, Miriam; Cong, Tao; Sureshkumar, Radhakrishna

2013-01-01T23:59:59.000Z

120

Optical and recombination losses in thin-film Cu(In,Ga)Se2 solar cells  

Science Journals Connector (OSTI)

Abstract Optical and recombination losses in thin-film solar cells based on CuInxGa1-xSe2 with the bandgaps 1.141.16 and 1.361.38eV have been evaluated. Parameters used for the analysis and calculations were verified by comparing the measured quantum efficiency spectra with the results of calculations. Optical losses due to reflections from the interfaces and absorption in the ZnO and CdS layers are found using the optical constants of materials taking into account anti-reflection coating on the ZnO surface. It is shown that for typical parameters of solar cells studied the optical losses amount to 1618%. Losses due to the recombination of charge carriers at the front and back surfaces of the absorbing layer and in the space charge region (SCR) are calculated based on their dependences on the carrier lifetime, the concentration of uncompensated acceptors (determined the width of the SCR) and other parameters of the absorber. Total recombination losses in solar cells with the bandgaps of CuIn(Ga,In)Se2 1.14 and 1.36eV are equal to 7.0% and 4.5%, respectively. It is also shown that for solar cell with the bandgap of absorber 1.14eV, an incomplete charge collection is caused also due to non-optimal width of the SCR. An improvement of charge collection in this cell can be achieved by varying the concentration of uncompensated acceptors in the absorber. However, it is impossible to achieve such improvement for solar cells with the bandgap of 1.36eV due to shorter carrier lifetime in the material.

L.A. Kosyachenko; X. Mathew; P.D. Paulson; V.Ya. Lytvynenko; O.L. Maslyanchuk

2014-01-01T23:59:59.000Z

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121

Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}  

DOE Patents [OSTI]

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

Mickelsen, R.A.; Chen, W.S.

1985-08-13T23:59:59.000Z

122

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2  

DOE Patents [OSTI]

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Mickelsen, Reid A. (Bellevue, WA) [Bellevue, WA; Chen, Wen S. (Seattle, WA) [Seattle, WA

1985-08-13T23:59:59.000Z

123

Designing Randomness - The Impact of Textured Surfaces on the Efficiency of Thin-Film Solar Cells  

Science Journals Connector (OSTI)

We analyze experimentally and theoretically light localization at randomly textured ZnO surfaces and light absorption in thin-film amorphous Si deposited conformal on it. Guidance is...

Beckers, Thomas; Bittkau, Karsten; Carius, Reinhard; Fahr, Stephan; Rockstuhl, Carsten; Lederer, Falk

124

Optimization-based design of surface textures for thin-film Si solar cells  

E-Print Network [OSTI]

We numerically investigate the light-absorption behavior of thin-film silicon for normal-incident light, using surface textures to enhance absorption. We consider a variety of texture designs, such as simple periodic ...

Sheng, Xing

125

Development of CdTe thin film solar cells on flexible foil substrates.  

E-Print Network [OSTI]

??Cadmium telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal band gap of 1.45 eV, its high optical absorption (more)

Hodges, Deidra Ranel

2009-01-01T23:59:59.000Z

126

CdTe/CdS Thin Film Solar Cells Fabricated on Flexible Substrates.  

E-Print Network [OSTI]

??Cadmium Telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal bandgap of 1.45 eV and its high optical absorption (more)

Palekis, Vasilios

2011-01-01T23:59:59.000Z

127

Towards Large Area Industrial Cost Competitive Coating for Thin Film Solar Electricity Production  

Science Journals Connector (OSTI)

Thin film PV market faces a struggling situation due to the need of reducing strongly prices, which can be done by increasing efficiency and reducing fabrication costs. Improvement of...

Bermudez, Veronica

128

Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics  

E-Print Network [OSTI]

CuIn(Se,S) 2 solar cell with a PCE of 11.1% under dark andpower conversion efficiency (PCE) of around 20% among thinAchievement of such high PCE can be largely ascribed to the

Chung, Choong-Heui

2012-01-01T23:59:59.000Z

129

Remarkable progress in thin-film silicon solar cells using high-efficiency triple-junction technology  

Science Journals Connector (OSTI)

Abstract Despite the many advantages of thin-film silicon (Si) solar cells, their low efficiencies remain a challenge that must be overcome. Efficient light utilization across the solar spectrum is required to achieve efficiencies over 15%, allowing them to be competitive with other solar cell technologies. To produce high-efficiency thin-film Si solar cells, we have developed triple-junction solar cell structures to enhance solar spectrum utilization. To maximize the light management, in-house ZnO:Al layers with high haze ratios and high transmittances were developed. In addition, novel doping layers, such as n-type microcrystalline silicon oxide (c-SiOx:H), which has a very low refractive index, and p-type microcrystalline silicon oxide (c-SiOx:H), which has a wide bandgap, were successfully applied to the optical reflector and the window layer, respectively. Thin-film quality control techniques for the deposition of hydrogenated amorphous silicon (a-Si:H) in the top cell, hydrogenated amorphous silicon-germanium (a-SiGe:H) or hydrogenated microcrystalline silicon (?c-Si:H) in the middle cell, and hydrogenated microcrystalline silicon (?c-Si:H) in the bottom cell were also important factors leading to the production of high-efficiency triple-junction solar cells. As a result of this work, an initial efficiency of 16.1% (in-house measurement) in the a-Si:H/a-SiGe:H/?c-Si:H stack and a stabilized efficiency of 13.4% (confirmed by NREL) in the a-Si:H/?c-Si:H/?c-Si:H stack were successfully achieved in a small-area triple-junction solar cell with dimensions of 1cm1cm.

Soohyun Kim; Jin-Won Chung; Hyun Lee; Jinhee Park; Younho Heo; Heon-Min Lee

2013-01-01T23:59:59.000Z

130

Development of Commercial Technology for Thin Film Silicon Solar Cells on Glass: Cooperative Research and Development Final Report, CRADA Number CRD-07-209  

SciTech Connect (OSTI)

NREL has conducted basic research relating to high efficiency, low cost, thin film silicon solar cell design and the method of making solar cells. Two patents have been issued to NREL in the above field. In addition, specific process and metrology tools have been developed by NREL. Applied Optical Sciences Corp. (AOS) has expertise in the manufacture of solar cells and has developed its own unique concentrator technology. AOS wants to complement its solar cell expertise and its concentrator technology by manufacturing flat panel thin film silicon solar cell panels. AOS wants to take NREL's research to the next level, using it to develop commercially viable flat pane, thin film silicon solar cell panels. Such a development in equipment, process, and metrology will likely produce the lowest cost solar cell technology for both commercial and residential use. NREL's fundamental research capability and AOS's technology and industrial background are complementary to achieve this product development.

Sopori, B.

2013-03-01T23:59:59.000Z

131

New strategy to promote conversion efficiency using high-index nanostructures in thin-film solar cells  

E-Print Network [OSTI]

Nano-scaled metallic or dielectric structures may provide various ways to trap light into thin-film solar cells for improving the conversion efficiency. In most schemes, the textured active layers are involved into light trapping structures that can provide perfect optical benefits but also bring undesirable degradation of electrical performance. Here we propose a novel approach to design high-performance thin-film solar cells. In our strategy, a flat active layer is adopted for avoiding electrical degradation, and an optimization algorithm is applied to seek for an optimized light trapping structure for the best optical benefit. As an example, we show that the efficiency of a flat a-Si:H thin-film solar cell can be promoted close to the certified highest value. It is also pointed out that, by choosing appropriate dielectric materials with high refractive index (>3) and high transmissivity in wavelength region of 350nm-800nm, the conversion efficiency of solar cells can be further enhanced.

Wang, DongLin

2014-01-01T23:59:59.000Z

132

Novel textured glass substrate with high light trapping capacity for thin film Si solar cells application  

Science Journals Connector (OSTI)

A novel large feature size crater like glass substrate was proposed in this paper. P-i-n type microcrystalline silicon film solar cell with higher external quantum efficiency was...

Wang, Yanfeng; Zhang, xiaodan; Bai, Lisha; Huang, Qian; Wei, Changchun; Zhao, Ying

133

Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance  

SciTech Connect (OSTI)

We report on CdS/CdTe photovoltaic devices that contain a thin Ta2O5 film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta2O5 films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta2O5 interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta2O5 interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.

Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor

2012-05-05T23:59:59.000Z

134

High Efficiency CdTe/CdS Thin Film solar Cells by a Process Suitable for Large Scale Production. N. Romeo, A. Bosio, A. Romeo, M. Bianucci, L. Bonci, C. Lenti  

E-Print Network [OSTI]

High Efficiency CdTe/CdS Thin Film solar Cells by a Process Suitable for Large Scale Production. N-mail:Nicola.Romeo@fis.unipr.it ABSTRACT: It has been demonstrated that CdTe/CdS thin film solar cells can exhibit an efficiency around 16 Film. 1 INTRODUCTION CdTe/CdS thin film solar cells have a good possibility to be produced on large

Romeo, Alessandro

135

Effect of Ag doping on opto-electrical properties of CdS thin films for solar cell applications  

Science Journals Connector (OSTI)

Abstract Cadmium sulfide (CdS) polycrystalline thin films of different thicknesses (ranging from 370nm to 750nm) were fabricated on corning glass substrates using Close Spaced Sublimation (CSS) technique. Optical and electrical investigation revealed that CdS thin films show an appreciable transparency (5070% transmission) in visible range and a highly resistive behavior (106?cm). Samples were doped by silver (Ag) at different concentrations, using ion exchange technique, in order to reduce the resistivity of CdS thin films and to improve their efficiency as a window layer for solar cell application. The doping of Ag in pure CdS thin films resulted into an increase of surface roughness and a decrease both in electrical resistivity and in transparency. By optimizing annealing parameters, we were able to properly control the optical properties of the present system. In fact, the Ag doping of pure CdS films has led to a decrease of the sample resistivity by three orders of magnitude (103?cm) against a 20% cut in optical transmission.

Adnan Nazir; Andrea Toma; Nazar Abbas Shah; Simone Panaro; Sajid Butt; Rizwan ur Rehman Sagar; Waseem Raja; Kamran Rasool; Asghari Maqsood

2014-01-01T23:59:59.000Z

136

Piezoelectric, solar and thermal energy harvesting for hybrid low-power generator systems with thin-film batteries  

Science Journals Connector (OSTI)

The harvesting of ambient energy to power small electronic components has received tremendous attention over the last decade. The research goal in this field is to enable self-powered electronic components for use particularly in wireless sensing and measurement applications. Thermal energy due to temperature gradients, solar energy and ambient vibrations constitute some of the major sources of energy that can be harvested. Researchers have presented several papers focusing on each of these topics separately. This paper aims to develop a hybrid power generator and storage system using these three sources of energy in order to improve both structural multifunctionality and system-level robustness in energy harvesting. A multilayer structure with flexible solar, piezoceramic, thin-film battery and metallic substructure layers is developed (with the overhang dimensions of 93 mm ? 25 mm ? 1.5 mm in cantilevered configuration). Thermal energy is also used for charging the thin-film battery layers using a 30.5 mm ? 33 mm ? 4.1 mm generator. Performance results are presented for charging and discharging of the thin-film battery layers using each one of the harvesting methods. It is shown based on the extrapolation of a set of measurements that 1 mA h of a thin-film battery can be charged in 20 min using solar energy (for a solar irradiance level of 223 W m?2), in 40 min using thermal energy (for a temperature difference of 31 C) and in 8 h using vibrational energy (for a harmonic base acceleration input of 0.5g at 56.4 Hz).

P Gambier; S R Anton; N Kong; A Erturk; D J Inman

2012-01-01T23:59:59.000Z

137

Oxidation of In2S3 films to synthetize In2S3(1-x)O3x thin films as a buffer layer in solar cells  

E-Print Network [OSTI]

Oxidation of In2S3 films to synthetize In2S3(1-x)O3x thin films as a buffer layer in solar cells S layers for solar cells. PACS : 68.55.ag Semiconductors, 68.55.J Morphology of films , 68.55.Nq the oxidation occurs is strongly dependent on the texture of deposited films. As-grown films deposited

Boyer, Edmond

138

Doping profiles in CdTe/CdS thin film solar cells  

Science Journals Connector (OSTI)

CdS/CdTe thin film solar cells showing comparable properties as commercial cells have been prepared by close space sublimation (CSS) in our own laboratory. We characterised the cells by capacitancevoltage profiling (CV), thermal admittance spectroscopy (TAS), and thermally stimulated capacitance measurements (TSCAP). The doping profiles of the CdTe layer obtained by CV measurements confirm the well known rise in dopant concentration with increasing depth if the usual evaluation procedure is employed. However, the TAS and TSCAP measurements reveal deep acceptors in the CdTe layer with a large concentration exceeding that of the shallow dopants. Under these conditions, CV measurements are shown to yield an apparently rising dopant concentration even for homogeneous doping. A combined simulation of doping profiles measured at different temperatures using a fixed and uniform shallow and deep doping fits well to measured doping concentration. These results indicate how to get reliable information on the shallow dopant concentration.

U. Reislhner; M. Hdrich; N. Lorenz; H. Metzner; W. Witthuhn

2007-01-01T23:59:59.000Z

139

Low work function, stable thin films  

DOE Patents [OSTI]

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

2000-01-01T23:59:59.000Z

140

Processing and analysis of polycrystalline thin-film solar cells made from uniform single phase materials  

SciTech Connect (OSTI)

This paper presents processes for producing uniform single phase polycrystalline films of Cu(InGa)Se{sub 2} and CdTe and the analysis of the resulting films and solar cell devices. The first two sections discuss Cu(InGa)Se{sub 2} cells prepared by the selenization of Cu-In-Ga films and of elemental evaporation. The third section describes a CdCl{sub 2} vapor treatment of CdTe that results in uniform large grain films with reduced {ital S} diffusion and reproducible performance. {copyright} {ital 1996 American Institute of Physics.}

Birkmire, R.W.; Hichri, H.; Klenk, R.; Marudachalam, M.; McCandless, B.E.; Phillips, J.E.; Schultz, J.M.; Shafarman, W.N. [Institute of Energy Conversion, Department of Energy, University Center of Excellence for Photovoltaic, Research and Education (National Renewable Energy Laboratory), University of Delaware, Newark, Delaware 19716 (United States)

1996-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Deposition and characterization of polycrystalline silicon films on glass for thin film solar cells  

SciTech Connect (OSTI)

The authors deposit phosphorus-doped, amorphous Si by low pressure chemical vapor deposition and subsequently crystallize the films by furnace annealing at a temperature of 600 C. Optical in-situ monitoring allows one to control the crystallization process. Phosphorus doping leads to faster crystallization and a grain size enhancement with a maximum grain size of 15 {micro}m. Using transmission electron microscopy they find a log-normal grain size distribution in their films. They demonstrate that this distribution not only arises from solid phase crystallization of amorphous Si but also from other crystallization processes based on random nucleation and growth. The log-normal grain size distribution seems to be a general feature of polycrystalline semiconductors.

Bergmann, R.B.; Krinke, J.; Strunk, H.P.; Werner, J.H.

1997-07-01T23:59:59.000Z

142

ITO, Si3N4 and ZnO: Al -- Simulation of Different Anti-reflection Coatings (ARC) for Thin Film a-Si:H Solar Cells  

Science Journals Connector (OSTI)

For thin film solar cells incorporating amorphous silicon (a-Si:H) as absorber materials, minimizing reflection from the top surface i.e. maximizing transmittance of the incoming light into the absorber for higher absorption plays an important role for ... Keywords: ARC, TCO, ITO, Si3N4, ZnO:Al, Solar cell

Kazi Islam; Aaesha Alnuaimi; Helmy Ally; Ammar Nayfeh

2013-11-01T23:59:59.000Z

143

ThinFilms  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Thin Films Thin Films Manufacturing Technologies The Thin Film laboratory provides a variety of vapor deposition processes and facilities for cooperative research and development. Available capabilities include electron beam evaporation, sputter deposition, reactive deposi- tion processes, atomic layer deposition (ALD) and specialized techniques such as focused ion beam induced chemical vapor deposition. Equipment can be reconfigured for prototyping, or it can be dedicated to long-term research, development and manufacturing. Most sputter and evaporative deposition systems are capable of depositing multiple materials. Deposition capabilities and expertise * Deposition of a large variety of thin film mate- rials * Multiple sputter deposition systems - Capable of depositing four materials in a

144

Control of thermal emittance of stainless steel using sputtered tungsten thin films for solar thermal power applications  

Science Journals Connector (OSTI)

Abstract Low thermal emittance is the key factor of a solar collector. For high temperature solar thermal applications, low emittance is an important parameter, because the thermal radiative losses of the absorbers increase proportionally by T4. Our primary motivation for carrying out this work has been to lower the thermal emittance of stainless steel substrate (intrinsic emittance=0.120.13) by coating a thin film of high infrared (IR) reflecting tungsten (W). Tungsten thin films were deposited on stainless steel substrates using a glow discharge direct current magnetron sputtering system. Emittance as low as 0.03 was obtained by varying the thickness of W coating on stainless steel substrate. The influences of structural, morphological and electrical properties of the W coating on its emittance values are studied. The effect of substrate roughness on the emittance of W coating is also examined. Thermal stability of the W coatings is studied in both vacuum and air. In order to demonstrate the effect of W interlayer, solar selective coating of AlTiN/AlTiON/AlTiO tandem absorber was deposited on W coated stainless steel substrates, which exhibited absorptance of 0.955 and emittance of 0.08 with a thermal stability up to 600C in vacuum.

K.P. Sibin; Siju John; Harish C. Barshilia

2015-01-01T23:59:59.000Z

145

Experimental Demonstration of Quasi-Resonant Absorption in Silicon Thin Films for Enhanced Solar Light Trapping  

E-Print Network [OSTI]

We experimentally demonstrate that the addition of partial lattice disorder to a thin-film micro-crystalline silicon photonic crystal results in the controlled spectral broadening of its absorption peaks to form quasi resonances; increasing light trapping over a wide bandwidth while also reducing sensitivity to the angle of incident radiation. Accurate computational simulations are used to design the active-layer photonic crystal so as to maximize the number of its absorption resonances over the broadband interval where micro-crystalline silicon is weakly absorbing before lattice disorder augmented with fabrication-induced imperfections are applied to further boost performance. Such a design strategy may find practical use for increasing the efficiency of thin-film silicon photovoltaics.

Oskooi, Ardavan; Ishizaki, Kenji; Noda, Susumu

2013-01-01T23:59:59.000Z

146

SunShot Initiative: Thin Film Photovoltaics Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Thin Film Photovoltaics Research Thin Film Photovoltaics Research to someone by E-mail Share SunShot Initiative: Thin Film Photovoltaics Research on Facebook Tweet about SunShot Initiative: Thin Film Photovoltaics Research on Twitter Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Google Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Delicious Rank SunShot Initiative: Thin Film Photovoltaics Research on Digg Find More places to share SunShot Initiative: Thin Film Photovoltaics Research on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Thin Film Photovoltaics Research The U.S. Department of Energy (DOE) supports research and development of

147

Absorber processing issues in high-efficiency, thin-film Cu(In,Ga)Se{sub 2}-based solar cells  

SciTech Connect (OSTI)

Three approaches to thin-film Cu(In,Ga)Se{sub 2} absorber fabrication are considered. They are generically described in terms of the sequential or concurrent nature of source material delivery, selenium delivery, and compound formation. A two-stage evaporation process successfully produced the absorber component of a world-record, 17.1{percent} efficient solar cell. Alternative approaches that reduce the requirements for high substrate temperatures are considered. The relationship between absorber process parameters, band gap profile, and device performance are examined. Engineering the [Ga]/([Ga]+[In]) profile in the absorber has led to the reported advances. {copyright} {ital 1996 American Institute of Physics.}

Tuttle, J.R.; Gabor, A.M.; Contreras, M.A.; Tennant, A.L.; Ramanathan, K.R.; Franz, A.; Matson, R.; Noufi, R. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

1996-01-01T23:59:59.000Z

148

Simulation of nanostructure-based and ultra-thin film solar cell devices beyond the classical picture  

E-Print Network [OSTI]

In this paper, an optoelectronic device simulation framework valid for arbitrary spatial variation of electronic potentials and optical modes, and for transport regimes ranging from ballistic to diffusive, is used to study non-local photon absorption, photocurrent generation and carrier extraction in ultra-thin film and nanostructure-based solar cell devices at the radiative limit. Among the effects that are revealed by the microscopic approach and which are inaccessible to macroscopic models is the impact of structure, doping or bias induced nanoscale potential variations on the local photogeneration rate and the photocarrier transport regime.

Aeberhard, Urs

2014-01-01T23:59:59.000Z

149

Thin film hydrogen sensor  

DOE Patents [OSTI]

A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

1999-03-23T23:59:59.000Z

150

Thin film hydrogen sensor  

DOE Patents [OSTI]

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

Cheng, Yang-Tse (Rochester Hills, MI); Poli, Andrea A. (Livonia, MI); Meltser, Mark Alexander (Pittsford, NY)

1999-01-01T23:59:59.000Z

151

Processing and modeling issues for thin-film solar cell devices. Annual subcontract report, January 16, 1994--January 15, 1995  

SciTech Connect (OSTI)

This report describes results achieved during the second phase of a four year subcontract to develop and understand thin film solar cell technology related to a-Si and its alloys, CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2}, and CdTe. Accomplishments during this phase include, development of equations and reaction rates for the formation of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} films by selenization, fabrication of a 15% efficient CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} cell, development of a reproducible, reliable Cu-diffused contact to CdTe, investigation of the role of CdTe-CdS interdiffusion on device operation, investigation of the substitution of HCl for CdCl{sub 2} in the post-deposition heat treatment of CdTe/CdS, demonstration of an improved reactor design for deposition of a-Si films, demonstration of improved process control in the fabrication of a ten set series of runs producing {approximately}8% efficient a-Si devices, demonstration of the utility of a simplified optical model for determining quantity and effect of current generation in each layer of a triple stacked a-Si cell, presentation of analytical and modeling procedures adapted to devices produced with each material system, presentation of baseline parameters for devices produced with each material system, and various investigations of the roles played by other layers in thin film devices including the Mo underlayer, CdS and ZnO in CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} devices, the CdS in CdTe devices, and the ZnO as window layer and as part of the back surface reflector in a-Si devices. In addition, collaborations with over ten research groups are briefly described. 73 refs., 54 figs., 34 tabs.

Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Hegedus, S.S.; McCandless, B.E.; Shafarman, W.N. [Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion

1995-06-01T23:59:59.000Z

152

Electron and hole drift mobility measurements on thin film CdTe solar cells Qi Long, Steluta A. Dinca, E. A. Schiff, Ming Yu, and Jeremy Theil  

E-Print Network [OSTI]

(2004); 10.1063/1.1645322 Cathodoluminescence of Cu diffusion in CdTe thin films for CdTe/CdS solar://scitation.aip.org/content/aip/journal/apl/105/4?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Copper-doped Cd

Schiff, Eric A.

153

CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar  

E-Print Network [OSTI]

CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar 1 , Parag). i:ZnO/Al:ZnO transparent and conducting window bilayer was deposited by RF magnetron sputtering

Sites, James R.

154

CdS quantum dot sensitized nanocrystalline Gd-doped TiO2 thin films for photoelectrochemical solar cells  

Science Journals Connector (OSTI)

CdS quantum dot sensitized Gd-doped TiO2 nanocrystalline thin films have been prepared by chemical method. X-ray diffraction analysis reveals that TiO2 and Gd-doped TiO2...nanocrystalline thin films are of anatas...

A. Ranjitha; N. Muthukumarasamy

2013-08-01T23:59:59.000Z

155

Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization  

E-Print Network [OSTI]

Research, Thin-Film Photovoltaic (PV) Cells Market Analysiscost of photovoltaic systems (such as solar cells) due tosolar cells are created by depositing layers of photovoltaic

Bielecki, Anthony

2013-01-01T23:59:59.000Z

156

Partial Shading in Monolithic Thin Film PV Modules: Analysis...  

Broader source: Energy.gov (indexed) [DOE]

A. Alam, "Identification, Characterization and Implications of Shadow Degradation in Thin Film Solar Cells," in Reliability Physics Symposium (IRPS), 2011 IEEE International, 2011,...

157

Thermochromic Properties of Nanocrystal-based Thin Films | The...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Nanocrystal-based Thin Films Functional coatings that can selectively reflect or transmit near-infrared solar radiation while maintiaining high transmittance for visible light can...

158

Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report  

SciTech Connect (OSTI)

During the past year, Colorado School of Mines (CSM) researchers performed systematic studies of the growth and properties of electrodeposition CdS and back-contact formation using Cu-doped ZnTe, with an emphasis on low Cu concentrations. CSM also started to explore the stability of its ZnTe-Cu contacted CdTe solar cells. Researchers investigated the electrodeposition of CdS and its application in fabricating CdTe/CdS solar cells. The experimental conditions they explored in this study were pH from 2.0 to 3.0; temperatures of 80 and 90 C; CdCl{sub 2} concentration of 0.2 M; deposition potential from {minus}550 to {minus}600 mV vs. Ag/AgCl electrode; [Na{sub 2}S{sub 2}O{sub 4}] concentration between 0.005 and 0.05 M. The deposition rate increases with increase of the thiosulfate concentration and decrease of solution pH. Researchers also extended their previous research of ZnTe:Cu films by investigating films doped with low Cu concentrations (< 5 at. %). The low Cu concentration enabled them to increase the ZnTe:Cu post-annealing temperature without causing excessive Cu diffusion into CdTe or formation of secondary phases. The effects of Cu doping concentration and post-deposition annealing temperature on the structural, compositional, and electrical properties of ZnTe were studied systematically using X-ray diffraction, atomic force microscopy, electron microprobe, Hall effect, and conductivity measurements.

Trefny, J.U.; Mao, D. [Colorado School of Mines, Golden, CO (United States). Dept. of Physics

1998-01-01T23:59:59.000Z

159

Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations  

SciTech Connect (OSTI)

Thin-film solar cells based on silicon have emerged as an alternative to standard thick wafers technology, but they are less efficient, because of incomplete absorption of sunlight, and non-radiative recombinations. In this paper, we focus on the case of crystalline silicon (c-Si) devices, and we present a full analytic electro-optical model for p-n junction solar cells with Lambertian light trapping. This model is validated against numerical solutions of the drift-diffusion equations. We use this model to investigate the interplay between light trapping, and bulk and surface recombination. Special attention is paid to surface recombination processes, which become more important in thinner devices. These effects are further amplified due to the textures required for light trapping, which lead to increased surface area. We show that c-Si solar cells with thickness of a few microns can overcome 20% efficiency and outperform bulk ones when light trapping is implemented. The optimal device thickness in presence of light trapping, bulk and surface recombination, is quantified to be in the range of 1080??m, depending on the bulk quality. These results hold, provided the effective surface recombination is kept below a critical level of the order of 100?cm/s. We discuss the possibility of meeting this requirement, in the context of state-of-the-art techniques for light trapping and surface passivation. We show that our predictions are within the capability of present day silicon technologies.

Bozzola, A., E-mail: angelo.bozzola@unipv.it; Kowalczewski, P.; Andreani, L. C. [Physics Department, University of Pavia and CNISM, via Bassi 6, I-27100 Pavia (Italy)

2014-03-07T23:59:59.000Z

160

Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics  

E-Print Network [OSTI]

energy sources, the potential of solar energy is the mostuse of solar cells as an energy source [2]. Therefore, thinspread use of solar cells as a renewable energy source [2].

Chung, Choong-Heui

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Solar Energy Materials & Solar Cells 92 (2008) 821829 Modeling the optical properties of WO3 and WO3SiO2 thin films  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 92 (2008) 821­829 Modeling the optical properties of WO3 the optical response of the films in the near-UV and visible region: two interband transitions for energies E

Thirumalai, Devarajan

162

The effect of impurities on the doping and VOC of CdTe/CdS thin film solar cells  

Science Journals Connector (OSTI)

The effect of introducing impurities in CdTe, namely antimony (Sb) and oxygen (O), on the net carrier concentration in CdS/CdTe solar cells and on their open-circuit voltage (VOC) has been investigated. Oxygen was introduced in the CdTe films during the deposition of this layer by the close-spaced sublimation process. The total pressure was held constant at 1330Pa (N2 and O2). The amount of oxygen was varied by varying its partial pressure. Antimony was introduced into CdTe using a post-deposition diffusion process. Following the deposition of CdTe a thin film (a few nm) of Sb was deposited onto the CdTe surface and subsequently heat-treated to cause in-diffusion of Sb. The temperature and time during the diffusion process were varied in the range of 300525C and 20160min respectively. In both instances it was possible to vary (increase) the doping concentration in CdTe. The increase in doping was accompanied by an increase in VOC. However, in all instances the doping in CdTe reached a maximum value, beyond which further increases were not possible leading to saturation in VOC. The highest VOC measured was similar to state-of-the-art values in the range of 800830mV, and the highest doping concentration measured was in the 1016cm?3 range.

H. Zhao; Alvi Farah; D. Morel; C.S. Ferekides

2009-01-01T23:59:59.000Z

163

NMR characterization of thin films  

DOE Patents [OSTI]

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

Gerald, II, Rex E. (Brookfield, IL); Klingler, Robert J. (Glenview, IL); Rathke, Jerome W. (Homer Glen, IL); Diaz, Rocio (Chicago, IL); Vukovic, Lela (Westchester, IL)

2008-11-25T23:59:59.000Z

164

New Materials of Co-Doped ZnO for LEDs and Thin Films Solar Cells  

Science Journals Connector (OSTI)

Zr-Al co-doped ZnO were prepared by DC magnetron sputtering on glass substrates. Microstructure, optoelectrical properties of the films were investigated. The films with resistivity...

Yuan, Yuzhen; Wang, Hui

165

Thin film photovoltaic cell  

DOE Patents [OSTI]

A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

Meakin, John D. (Newark, DE); Bragagnolo, Julio (Newark, DE)

1982-01-01T23:59:59.000Z

166

Development of tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar panels with reflective layer and 4-step laser scribing for building-integrated photovoltaic applications  

Science Journals Connector (OSTI)

In this work, tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar modules were successfully designed and developed for building-integrated photovoltaic applications. Novel and key technologies of reflective layers and ...

Chin-Yi Tsai, Chin-Yao Tsai

2014-01-01T23:59:59.000Z

167

(Sr,Ba)(Si,Ge){sub 2} for thin-film solar-cell applications: First-principles study  

SciTech Connect (OSTI)

In order to meet the increasing demand for electric power generation from solar energy conversion, the development of efficient light absorber materials has been awaited. To this end, the electronic and optical properties of advanced alkaline-earth-metals disilicides and digermanides (SrSi{sub 2}, BaSi{sub 2}, SrGe{sub 2}, and BaGe{sub 2}) are studied by means of the density functional theory using HSE06 exchange-correlation energy functional. Our calculations show that all these orthorhombic structured compounds have fundamental indirect band gaps in the range E{sub g} ? 0.891.25 eV, which is suitable for solar cell applications. The estimated lattice parameters and band gaps are in good agreement with experiments. Our calculations show that the electronic band structures of all four compounds are very similar except in the vicinity of the ?-point. The valence band of these compounds is made up by Si(Ge)-p states, whereas the conduction band is composed of Sr(Ba)-d states. Their band alignments are carefully determined by estimating the work function of each compound using slab model. The optical properties are discussed in terms of the complex dielectric function ?(?)?=??{sub 1}(?)?+?i?{sub 2}(?). The static and high-frequency dielectric constants are calculated, taking into account the ionic contribution. The absorption coefficient ?(?) demonstrates that a low energy dispersion of the conduction band, which results in a flat conduction band minimum, leads to large optical activity in these compounds. Therefore, alkaline-earth-metals disilicides and digermanides possess great potential as light absorbers for applications in thin-film solar cell technologies.

Kumar, Mukesh, E-mail: Kumar.Mukesh@nims.go.jp, E-mail: mkgarg79@gmail.com [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Umezawa, Naoto [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan); TU-NIMS Joint Research Center, School of Materials Science and Engineering, Tianjin University, 92 Weijin Road, Nankai District, Tianjin (China); Imai, Motoharu [Superconducting Properties Unit, National Institute for Materials Science, Ibaraki 305-0047 (Japan)

2014-05-28T23:59:59.000Z

168

Semiconductor Nanocrystals as Luminescent Down-Shifting Layers To Enhance the Efficiency of Thin-Film CdTe/CdS and Crystalline Si Solar Cells  

Science Journals Connector (OSTI)

A commonly used thin-film CdTe/CdS solar cell is transparent to photons with energies below the bandgap energy, and an additional portion of sunlight is lost because of absorption of high-energy UV photons in the CdS buffer layer. ... Wu, S.; Dou, J.; Zhang, J.; Zhang, S.A Simple and Economical One-Pot Method to Synthesize High-Quality Water Soluble CdTe QDs J. Mater. ...

Sergii Kalytchuk; Shuchi Gupta; Olga Zhovtiuk; Aleksandar Vaneski; Stephen V. Kershaw; Huiying Fu; Zhiyong Fan; Eric C. H. Kwok; Chiou-Fu Wang; Wey Yang Teoh; Andrey L. Rogach

2014-01-17T23:59:59.000Z

169

Polymer and organic solar cells viewed as thin film technologies: What it will take for them to become a success outside academia  

Science Journals Connector (OSTI)

Abstract The polymer and organic solar cell technology is critically presented in the context of other thin film technologies with a specific focus on what it will take to make them a commercial success. The academic success of polymer and organic solar cells far outweigh any other solar cell technology when judging by the number of scientific publications whereas the application of polymer and organic solar cells in real products is completely lacking. This aspect is viewed as a sign of the polymer and organic solar cell field as being more complex and less mature and it raises the question of whether an organic analog to a successful inorganic technology is forcibly needed and indeed whether it is at all worth exploring beyond academia.

Frederik C. Krebs; Mikkel Jrgensen

2013-01-01T23:59:59.000Z

170

High Efficiency CdTe and CIGS Thin Film Solar Cells: Highlights...  

Office of Scientific and Technical Information (OSTI)

Technologies, NYCA MiaSole, CA HelioVolt, Tx Solyndra, CA SoloPower, CA Wurth Solar, Germany SULFURCELL, Germany CIS Solartechnik, Germany Solarion, Germany Solibro, Sweden...

171

Plasmonic gratings for enhanced light-trapping in thin-film organic solar cells  

Science Journals Connector (OSTI)

We discuss optimized silver gratings to enhance absorption in organic solar cells. The enhancement is attributed to generated surface plasmon (SP) polaritons and localized SP...

Le, Khai Q; Al, Andrea

172

Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells  

Science Journals Connector (OSTI)

Dielectric/metal/dielectric (DMD) electrodes have the potential to significantly increase the absorption efficiency and photocurrent in flexible organic solar cells. We demonstrate...

Sergeant, Nicholas P; Niesen, Bjoern; Liu, Albert S; Boman, Lee; Stoessel, Chris; Heremans, Paul; Peumans, Peter; Rand, Barry P; Fan, Shanhui

2013-01-01T23:59:59.000Z

173

NREL: Photovoltaics Research - Thin Film Photovoltaic Partnership Project  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed the United States to attain world leadership in this area of solar technology. Three national R&D teams focused on thin-film semiconductor materials: amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS) and its alloys. The Module Reliability Team and Environmental Health and Safety Team were crosscutting. The teams comprised researchers from the solar industry, academia, and NREL who focused their efforts on improving materials, devices, and manufacturing processes-all

174

Technology of Amorphous Silicon Thin Films for Solar Cells and Applications to Power Systems  

Science Journals Connector (OSTI)

Preliminary attempts have been made to grow non-hydrogenated a-Si films by evaporation in an ordinary vacuum system (ultimate pressure 10?6 Toor) fitted with a six-hearth electron gun and a substrate heater. This...

D. Girginoudi; A. Thanailakis; P. Abarian

1983-01-01T23:59:59.000Z

175

Development of high efficieny CdTe thin-film solar cell.  

E-Print Network [OSTI]

??CdTe films were deposited by sputtering technique and were then carried out by CdCl2 treatment. The SEM micrographs show that the grain sizes of the (more)

Huang, Yein-rein

2011-01-01T23:59:59.000Z

176

Barrier Coatings for Thin Film Solar Cells: Final Subcontract Report, September 1, 2002 -- January 30, 2008  

SciTech Connect (OSTI)

This program has involved investigations of the stability of CdTe and copper-indium-gallium-diselenide (CIGS) solar cells under damp heat conditions and effects of barrier coatings.

Olsen, L. C.

2010-03-01T23:59:59.000Z

177

Light trapping in thin film solar cells using textured photonic crystal  

DOE Patents [OSTI]

A solar cell includes a photoactive region that receives light. A photonic crystal is coupled to the photoactive region, wherein the photonic crystal comprises a distributed Bragg reflector (DBR) for trapping the light.

Yi, Yasha (Somerville, MA); Kimerling, Lionel C. (Concord, MA); Duan, Xiaoman (Amesbury, MA); Zeng, Lirong (Cambridge, MA)

2009-01-27T23:59:59.000Z

178

Nanocauliflower like structure of CdS thin film for solar cell photovoltaic applications: In situ tin doping by chemical bath deposition technique  

Science Journals Connector (OSTI)

Abstract We report on surface morphology changes of in situ tin (Sn) doped cadmium sulphide (CdS) thin film nanostructures prepared on a glass substrate using the chemical bath deposition (CBD) technique. Sn-doping in the presence of triethanolammine (TEOA) as complexing agent resulted in the formation of nanocauliflower like structure of CdS thin film. X-ray diffraction (XRD) results indicated that Sn-doped CdS thin films show a hexagonal structure with a preferential orientation growth along the c-axis (002). The Sn4+ doping markedly influenced on the evolution of the CdS nanostructures, resulting in the formation of nanocracks due to the substitution of Cd2+ ions by larger-than-host Sn4+ ions as well as a drastic increase in electrical conductivity. An improved optical transmittance property was also achieved by the Sn-doping with no considerable change in the energy band gap. Moreover, a large improvement in both electrical conductivity and photosensitivity observed in the Sn-doped CdS thin films suggests that Sn-doping is highly effective for applications as window/buffer layers in future solar cell applications. Structural evolution of cauliflower like nanostructures are also discussed in this paper.

K.C. Wilson; E. Manikandan; M. Basheer Ahamed; B.W. Mwakikunga

2014-01-01T23:59:59.000Z

179

Optical and electrical properties study of sol-gel derived Cu{sub 2}ZnSnS{sub 4} thin films for solar cells  

SciTech Connect (OSTI)

The fabrication of environmental-friendly Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films with pure kesterite phase is always a challenge to researchers in the field of solar cells. We introduce a simple non-vacuum sol-gel method to fabricate kesterite CZTS films. Ethylenediamine is used as the chelating agent and stabilizer and plays an important role in preparing stable precursor. X-ray diffraction, Raman and scanning electron microscopy studies suggest that the microstructure and optical properties of CZTS films depend strongly on annealing temperatures. The temperature dependence of conductivity of 500?C annealed CZTS film shows that the Mott law dominates in the low temperature region and thermionic emission is predominant at high temperatures.

Guo, B. L.; Liu, X. J.; Li, A. D., E-mail: wcliu@nju.edu.cn, E-mail: adli@nju.edu.cn [National Laboratory of Solid State Microstructures, College of Engineering and Applied Science, Nanjing University, Nanjing 210093 (China); Chen, Y. H. [National Laboratory of Solid State Microstructures, Photovoltaic Engineering Center, Nanjing University, Nanjing 210093 (China); Liu, W. C., E-mail: wcliu@nju.edu.cn, E-mail: adli@nju.edu.cn [National Laboratory of Solid State Microstructures, College of Engineering and Applied Science, Nanjing University, Nanjing 210093 (China); National Laboratory of Solid State Microstructures, Photovoltaic Engineering Center, Nanjing University, Nanjing 210093 (China)

2014-09-15T23:59:59.000Z

180

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Annual subcontract report, May 1985 - Jul 1986  

SciTech Connect (OSTI)

A study was undertaken of the optoelectronic properties of amorphous silicon-hydrogen thin films deposited from disilane at high deposition rates. The information derived from this study was used to fabricate amorphous silicon solar cells with efficiencies exceeding 7%. The intrinsic layer of these solar cells was deposited at 15 angstroms/second. Material properties investigated included dark conductivity, photoconductivity, minority carrier diffusion length, and density of states. The solar cells properties characterized were absolute quantum yield and simulated global AM 1.5 efficiencies. Investigations were undertaken utilizing optical and infrared spectroscopy to optimize the microstructures of the intrinsic amorphous silicon. That work was sponsored by the New York State Energy Research and Development Authority. The information was used to optimize the intrinsic layer of amorphous silicon solar cells, resulting in AM 1.5 efficiencies exceeding 7%.

Wiesmann, H.; Dolan, J.; Fricano, G.; Danginis, V.

1987-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Electrodeposition of Antimony Selenide Thin Films and Application in Semiconductor Sensitized Solar Cells  

Science Journals Connector (OSTI)

The currentvoltage characteristic of the cells were measured using a xenon arc lamp simulator (Sun 2000, ABET Technologies) with an AM 1.5 G spectral filter, and the intensity was adjusted to provide 1 sun (100 mW/cm2) using a calibrated silicon solar cell. ... In selenosulfate electrolyte, the cathodic current detected for V production of Se2 by means of SeSO32 + 2 e = Se2 + SO2. ... Indeed, the Jsc is similar to values reported for the state of the art of the inorganic semiconductor sensitized solar cells based on liquid(36) and organic(7) hole conductors. ...

T. Tuyen Ngo; Sudam Chavhan; Ivet Kosta; Oscar Miguel; Hans-Jurgen Grande; Ramn Tena-Zaera

2014-01-17T23:59:59.000Z

182

Theoretical Analysis of Effects of Deep Level, Back Contact, and Absorber Thickness on Capacitance-Voltage Profiling of CdTe Thin-Film Solar Cells  

SciTech Connect (OSTI)

The apparent carrier density profile measured by the capacitance-voltage technique in CdTe thin-film solar cells frequently displays a distinctive U-shape. We show that, even assuming a uniform carrier density, such a U-shape may arise from deep levels, a non-ohmic back-contact, and a thin absorber, which are commonly present in practical CdTe thin-film solar cells. A thin CdTe absorber contributes to the right branch of the U-shape due to a punch-through effect at reverse or zero biases, when the CdTe absorber is nearly fully depleted. A rectifying back-contact contributes to both branches of the U-shape due to voltage sharing with the front junction under a forward bias and early punch-through under a reverse bias. Deep levels contribute to the right branch, but also raise the bottom of the U-shape, leading to an overestimate of carrier density.

Li, J. V.; Halverson, A. F.; Sulima, O. V.; Bansal, S.; Burst, J. M.; Barnes, T. M.; Gessert, T. A.; Levi, D. H.

2012-05-01T23:59:59.000Z

183

Annealed CVD molybdenum thin film surface  

DOE Patents [OSTI]

Molybdenum thin films deposited by pyrolytic decomposition of Mo(CO).sub.6 attain, after anneal in a reducing atmosphere at temperatures greater than 700.degree. C., infrared reflectance values greater than reflectance of supersmooth bulk molybdenum. Black molybdenum films deposited under oxidizing conditions and annealed, when covered with an anti-reflecting coating, approach the ideal solar collector characteristic of visible light absorber and infrared energy reflector.

Carver, Gary E. (Tucson, AZ); Seraphin, Bernhard O. (Tucson, AZ)

1984-01-01T23:59:59.000Z

184

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b  

E-Print Network [OSTI]

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b , Ounsi of an absorbing planar photonic crystal within a thin film photovoltaic cell. The devices are based on a stack with large areas. Keywords: Photonic crystal, Photovoltaic solar cell, Thin film solar cell, Hydrogenated

Paris-Sud XI, Université de

185

Thin film hydrogen sensor  

DOE Patents [OSTI]

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

Lauf, Robert J. (Oak Ridge, TN); Hoffheins, Barbara S. (Knoxville, TN); Fleming, Pamela H. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

186

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells  

DOE Patents [OSTI]

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Ramanathan, Kannan V. (Lakewood, CA); Contreras, Miguel A. (Golden, CA); Bhattacharya, Raghu N. (Littleton, CA); Keane, James (Lakewood, CA); Noufi, Rommel (Golden, CA)

1999-01-01T23:59:59.000Z

187

High efficiency, low cost, thin film silicon solar cell design and method for making  

DOE Patents [OSTI]

A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

Sopori, Bhushan L. (Denver, CO)

2001-01-01T23:59:59.000Z

188

Hybrid Thin Film Deposition System | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Hybrid Thin Film Deposition System Hybrid Thin Film Deposition System Only available at EMSL, the Discovery Deposition System has been customized to be a fully automated...

189

E-Print Network 3.0 - advanced thin film Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

half of all glass... cells by absorbing light within a specific wavelength. Today's thin-film solar cells could not function... , but static, layer of a thin-film pho- tovoltaic...

190

Solar Thin Power | Open Energy Information  

Open Energy Info (EERE)

Power Jump to: navigation, search Name: Solar Thin Power Place: New York Sector: Solar Product: Solar Thin Power was formed to seek out solar projects in North America, Asia and...

191

CFN | Thin Films Group  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Materials Synthesis and Characterization Facility Materials Synthesis and Characterization Facility Thin-Film Processing Facility Online Manager (FOM) website FOM manual ESR for lab 1L32 (High-Resolution SEM and x-ray microanalysis) CFN Operations Safety Awareness (COSA) form for 1L32 (ESR #1) Technical article on LABE detector (Analytical SEM) Request form for off-hours access (.doc, First time only, renewals done via email) Lab Tool capabilities Primary contact Training schedule Backup contact Booking calendar Booking rules SOP 1L32 Analytical SEM Camino Thurs 10-12 PM Stein FOM yes yes Hitachi S-4800 SEM Stein Tues 1-3 PM Black FOM no yes booking calendar: yes = need to reserve tool time in calendar before using tool booking rules: yes = specific rules exist for reserving tool time SOP = standard operating procedure (basic instructions)

192

Ferromagnetic thin films  

DOE Patents [OSTI]

A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

Krishnan, K.M.

1994-12-20T23:59:59.000Z

193

Sputtered Nickel Oxide Thin Film for Efficient Hole Transport Layer in Polymer-Fullerene Bulk-Heterojunction Organic Solar Cell  

SciTech Connect (OSTI)

Bulk-heterojunction (BHJ) organic photovoltaics (OPV) are very promising thin film renewable energy conversion technologies due to low production cost by high-throughput roll-to-roll manufacturing, an expansive list of compatible materials, and flexible device fabrication. An important aspect of OPV device efficiency is good contact engineering. The use of oxide thin films for this application offers increased design flexibility and improved chemical stability. Here we present our investigation of radio frequency magnetron sputtered nickel oxide (NiO{sub x}) deposited from oxide targets as an efficient, easily scalable hole transport layer (HTL) with variable work-function, ranging from 4.8 to 5.8 eV. Differences in HTL work-function were not found to result in statistically significant changes in open circuit voltage (V{sub oc}) for poly(3-hexylthiophene):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (P3HT:PCBM) BHJ device. Ultraviolet photoemission spectroscopy (UPS) characterization of the NiO{sub x} film and its interface with the polymer shows Fermi level alignment of the polymer with the NiO{sub x} film. UPS of the blend also demonstrates Fermi level alignment of the organic active layer with the HTL, consistent with the lack of correlation between V{sub oc} and HTL work-function. Instead, trends in j{sub sc}, V{sub oc}, and thus overall device performance are related to the surface treatment of the HTL prior to active layer deposition through changes in active layer thickness.

Widjonarko, N. E.; Ratcliff, E. L.; Perkins, C. L.; Sigdel, A. K.; Zakutayev, A.; Ndione, P. F.; Gillaspie, D. T.; Ginley, D. S.; Olson, D. C.; Berry, J. J.

2012-03-01T23:59:59.000Z

194

Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells  

DOE Patents [OSTI]

A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.

Noufi, Rommel (Golden, CO); Gabor, Andrew M. (Boulder, CO); Tuttle, John R. (Denver, CO); Tennant, Andrew L. (Denver, CO); Contreras, Miguel A. (Golden, CO); Albin, David S. (Denver, CO); Carapella, Jeffrey J. (Evergreen, CO)

1995-01-01T23:59:59.000Z

195

E-Print Network 3.0 - ag sn thin-film Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

solar... on a conventional metal-oxide transparent electrode. Thin-film optoelectronic devices make ... Source: Cui, Yi - Department of Materials Science and Engineering,...

196

Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study  

SciTech Connect (OSTI)

We report the fabrication of a thin film InAs/GaAs quantum dot solar cell (QD cell) by applying epitaxial lift-off (ELO) approach to the GaAs substrate. We confirmed significant current collection enhancement (?0.91?mA/cm{sup 2}) in the ELO-InAs QD cell within the wavelength range of 700?nm900?nm when compared to the ELO-GaAs control cell. This is almost six times of the sub-GaAs bandgap current collection (?0.16?mA/cm{sup 2}) from the wavelength range of 900?nm and beyond, we also confirmed the ELO induced resonance cavity effect was able to increase the solar cell efficiency by increasing both the short circuit current and open voltage. The electric field intensity of the resonance cavity formed in the ELO film between the Au back reflector and the GaAs front contact layer was analyzed in detail by finite-differential time-domain (FDTD) simulation. We found that the calculated current collection enhancement within the wavelength range of 700?nm900?nm was strongly influenced by the size and shape of InAs QD. In addition, we performed concentrated light photovoltaic study and analyzed the effect of intermediate states on the open voltage under varied concentrated light intensity for the ELO-InAs QD cell.

Sogabe, Tomah, E-mail: sogabe@mbe.rcast.u-tokyo.ac.jp; Shoji, Yasushi; Tamayo, Efrain; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8504 (Japan); Mulder, Peter; Schermer, John [Institute for Molecules and Materials, Radboud University Nijmegen, Heyendaalseweg 135, 6525 AJ Nijmegen (Netherlands)

2014-09-15T23:59:59.000Z

197

Black Silicon Solar Thin-film Microcells Integrating Top Nanocone Structures for Broadband and Omnidirectional Light-Trapping  

E-Print Network [OSTI]

Recently developed classes of monocrystalline silicon solar microcells (u-cell) can be assembled into modules with characteristics (i.e., mechanically flexible forms, compact concentrator designs, and high-voltage outputs) that would be impossible to achieve using conventional, wafer-based approaches. In this paper, we describe a highly dense, uniform and non-periodic nanocone forest structure of black silicon (bSi) created on optically-thin (30 um) u-cells for broadband and omnidirectional light-trapping with a lithography-free and high-throughput plasma texturizing process. With optimized plasma etching conditions and a silicon nitride passivation layer, black silicon u-cells, when embedded in a polymer waveguiding layer, display dramatic increases of as much as 65.7% in short circuit current, as compared to a bare silicon device. The conversion efficiency increases from 8% to 11.5% with a small drop in open circuit voltage and fill factor.

Xu, Zhida; Brueckner, Eric P; Li, Lanfang; Jiang, Jing; Nuzzo, Ralph G; Liu, Gang L

2014-01-01T23:59:59.000Z

198

Modeling of capacitance transients of thin-film solar cells: A valuable tool to gain information on perturbing layers or interfaces  

SciTech Connect (OSTI)

Thin-film electronic and photovoltaic devices often comprise, in addition to the anticipated p-n junctions, additional non-ideal ohmic contacts between layers. This may give rise to additional signals in capacitance spectroscopy techniques that are not directly related to defects in the structure. In this paper, we present a fitting algorithm for transient signals arising from such an additional junction. The fitting results are in excellent agreement with the diode characteristics extracted from static measurements on individual components. Finally, the algorithm is applied for determining the barriers associated with anomalous signals reported for selected CuIn{sub 1x}Ga{sub x}Se{sub 2} and CdTe solar cells.

Lauwaert, Johan, E-mail: Johan.Lauwaert@UGent.be; Van Puyvelde, Lisanne; Vrielinck, Henk [Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, 9000 Gent (Belgium); Lauwaert, Jeroen; Thybaut, Joris W. [Laboratory for Chemical Technology (LCT), Ghent University, Krijgslaan 281-S5, 9000 Gent (Belgium)

2014-02-03T23:59:59.000Z

199

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Phase II annual subcontract report, 1 January 1985--31 January 1986  

SciTech Connect (OSTI)

This report presents results of the second phase of research on high-efficiency, single-junction, monolithic, thin-film a-Si solar cells. Five glow-discharge deposition systems, including a new in-line, multichamber system, were used to grow both doped and undoped a-Si:H. A large number of silane and disilane gas cylinders were analyzed with a gas chromatography/mass spectroscopy system. Strong correlations were found between the breakdown voltage, the deposition rate, the diffusion length, and the conversion efficiency for varying cathode-anode separations in a DC glow-discharge deposition mode. Tin oxide films were grown by chemical vapor deposition with either tetramethyl tin (TMT) or tin tetrachloride (TTC). The best were grown with TMT, but TTC films had a more controlled texture for light trapping and provided a better contact to the p-layer. The best results were obtained with 7059 glass substrates. Efficiencies as high as 10.86% were obtained in p-i-n cells with superlattice p-layers and as high as 10.74% in cells with both superlattice p- and n-layers. Measurements showed that the boron-doping level in the p-layer can strongly affect transport in the i-layer, which can be minimized by reactive flushing before i-layer deposition. Stability of a-Si:H cells is improved by light doping. 51 refs., 64 figs., 21 tabs.

Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; Catalano, A.; D'Aiello, R.V.; Dickson, C.R.; McVeigh, J.; Newton, J.; O'Dowd, J.; Oswald, R.S.; Rajan, K.

1988-09-01T23:59:59.000Z

200

Multi-resonant silver nano-disk patterned thin film hydrogenated amorphous silicon solar cells for Staebler-Wronski effect compensation  

E-Print Network [OSTI]

We study polarization independent improved light trapping in commercial thin film hydrogenated amorphous silicon (a-Si:H) solar photovoltaic cells using a three-dimensional silver array of multi-resonant nano-disk structures embedded in a silicon nitride anti-reflection coating (ARC) to enhance optical absorption in the intrinsic layer (i-a-Si:H) for the visible spectrum for any polarization angle. Predicted total optical enhancement (OE) in absorption in the i-a-Si:H for AM-1.5 solar spectrum is 18.51% as compared to the reference, and producing a 19.65% improvement in short-circuit current density (JSC) over 11.7 mA/cm2 for a reference cell. The JSC in the nano-disk patterned solar cell (NDPSC) was found to be higher than the commercial reference structure for any incident angle. The NDPSC has a multi-resonant optical response for the visible spectrum and the associated mechanism for OE in i-a-Si:H layer is excitation of Fabry-Perot resonance facilitated by surface plasmon resonances. The detrimental Staebl...

Vora, Ankit; Pearce, Joshua M; Bergstrom, Paul L; Gney, Durdu

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Thin-film Lithium Batteries  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Thin-Film Battery with Lithium Anode Courtesy of Oak Ridge National Laboratory, Materials Science and Technology Division Thin-Film Lithium Batteries Resources with Additional Information The Department of Energy's 'Oak Ridge National Laboratory (ORNL) has developed high-performance thin-film lithium batteries for a variety of technological applications. These batteries have high energy densities, can be recharged thousands of times, and are only 10 microns thick. They can be made in essentially any size and shape. Recently, Teledyne licensed this technology from ORNL to make batteries for medical devices including electrocardiographs. In addition, new "textured" cathodes have been developed which have greatly increased the peak current capability of the batteries. This greatly expands the potential medical uses of the batteries, including transdermal applications for heart regulation.'

202

NREL Highlights SCIENCE Use of Earth-abundant materials in solar absorber films  

E-Print Network [OSTI]

NREL Highlights SCIENCE Use of Earth-abundant materials in solar absorber films is critical of these materials could open new opportunities for introducing thin-film solar technologies that combine both low near the FeS2 thin-film surfaces and grain boundaries that limit its open-circuit voltage, rather than

203

Guided optical modes in randomly textured ZnO thin films imaged by near-field scanning optical K. Bittkau* and R. Carius  

E-Print Network [OSTI]

relevance. In particular, when designing thin-film solar cells and light emitting diodes LEDs , ran- domly

Peinke, Joachim

204

Thin film photovoltaic cells  

DOE Patents [OSTI]

A solar cell has as its transparent electrical contact a grid made from a non-noble metal by providing a layer of copper oxide between the transparent electrical contact and the absorber-generator.

Rothwarf, Allen (Philadelphia, PA)

1981-01-01T23:59:59.000Z

205

Structural, optical and photocatalytic properties of ZnO thin films and  

E-Print Network [OSTI]

emitting diodes, gas sensors and transparent conducting thin films for solar cells. In this work, Zn an electronic furnace. Fig. 1. Grain size (black) and RMS variations (blue) of 1-6 layered ZnO films vs

206

Vertically Aligned Nanocomposite Thin Films  

E-Print Network [OSTI]

nanocomposite oxides have attracted extensive research interest. Nanocomposites consist of nanosized particles embedded in different materials matrix.8 In recent years, high quality nanocrystalline materials have shown novel physical, chemical, magnetic....................................... 9 1.2.3 Physical properties of oxide thin films........................ 12 1.2.3.1 Electrical and optical properties................. 13 1.2.3.2 Magnetism and magnetotransport properties...

Bi, Zhenxing

2012-07-16T23:59:59.000Z

207

Stabilization of solar films against hi temperature deactivation  

DOE Patents [OSTI]

A multi-layer solar energy collector of improved stability comprising: (1) a solar absorptive film consisting essentially of copper oxide, cobalt oxide and manganese oxide; (2) a substrate of quartz, silicate glass or a stainless steel; and (3) an interlayer of platinum, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of platinum to obtain a stable conductor-dielectric tandem.

Jefferson, Clinton F. (Millburn, NJ)

1984-03-20T23:59:59.000Z

208

Institute of Photo Electronic Thin Film Devices and Technology of Nankai  

Open Energy Info (EERE)

Electronic Thin Film Devices and Technology of Nankai Electronic Thin Film Devices and Technology of Nankai University Jump to: navigation, search Name Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University Place Tianjin Municipality, China Zip 300071 Sector Solar Product A thin-film solar cell research institute in China. References Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University is a company located in Tianjin Municipality, China . References ↑ "Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University"

209

Impact of environmental conditions on the chemical surface properties of Cu(In,Ga)(S,Se){sub 2} thin-film solar cell absorbers  

SciTech Connect (OSTI)

Environmentally driven aging effects play a crucial role in thin-film solar cells based on Cu(In,Ga)(S,Se){sub 2}, both for long-term stability and short air exposure during production. For a better understanding of such effects, Cu(In,Ga)(S,Se){sub 2} absorber surfaces were investigated by x-ray photoelectron and Auger electron spectroscopy after exposure to different environmental conditions. Identical absorbers were stored in a nitrogen atmosphere, in damp heat, and under ambient conditions for up to 14 days. We find varying degrees of diffusion of sulfur, copper, and sodium towards the surface, with potential impact on the electronic surface structure (band gap) and the properties of the interface to a buffer layer in a solar cell device. Furthermore, we observe an oxidation (in decreasing order) of indium, copper, and selenium (but no oxidation of sulfur). And finally, varying amounts of carbon- and oxygen-containing adsorbates are found. In particular, the findings suggest that, for ambient air exposure, sodium carbonate is formed at the surface.

Hauschild, D., E-mail: dirk.hauschild@physik.uni-wuerzburg.de, E-mail: l.weinhardt@kit.edu; Meyer, F. [Experimental Physics VII, University of Wrzburg, Am Hubland, 97074 Wrzburg (Germany); Pohlner, S.; Lechner, R.; Dietmller, R.; Palm, J. [AVANCIS GmbH and Co. KG, Otto-Hahn-Ring 6, 81739 Munich (Germany); Heske, C. [Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), Hermann-v.-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology (KIT), Hermann-v.-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Department of Chemistry, University of Nevada, Las Vegas (UNLV), 4505 Maryland Parkway, Las Vegas, Nevada 89154-4003 (United States); Institute for Chemical Technology and Polymer Chemistry, Karlsruhe Institute of Technology (KIT), Engesserstr. 18/20, 76128 Karlsruhe (Germany); Weinhardt, L., E-mail: dirk.hauschild@physik.uni-wuerzburg.de, E-mail: l.weinhardt@kit.edu [Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), Hermann-v.-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology (KIT), Hermann-v.-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Department of Chemistry, University of Nevada, Las Vegas (UNLV), 4505 Maryland Parkway, Las Vegas, Nevada 89154-4003 (United States); Reinert, F. [Experimental Physics VII, University of Wrzburg, Am Hubland, 97074 Wrzburg (Germany); Karlsruhe Institute of Technology (KIT), Gemeinschaftslabor fr Nanoanalytik, 76021 Karlsruhe (Germany)

2014-05-14T23:59:59.000Z

210

NANOCOMPOSITE ENABLED SENSITIZED SOLAR CELL  

E-Print Network [OSTI]

is mostly thin- film solar technology, such as CdTe and CuInimportant. Thin film solar technology such as CIGS (Copper,in all thin-film solar cell technologies is that absorbance

Phuyal, Dibya

2012-01-01T23:59:59.000Z

211

Generation of low work function, stable compound thin films by laser ablation  

DOE Patents [OSTI]

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

2001-01-01T23:59:59.000Z

212

Temperature-Stable and Optically Transparent Thin-Film Zinc Oxide Aerogel Electrodes As Model Systems for 3D Interpenetrating OrganicInorganic Heterojunction Solar Cells  

Science Journals Connector (OSTI)

(49) Since the formation of the ZnO aerogel in liquid dispersion involves a mechanism with temporally distinctive sol and gelation steps,(39) there is a narrow time window to yield homogeneous coating of the substrate with a thin aerogel film via dip-coating. ... Figure 2. Different materials coated with 200 nm thin ZnO aerogel-film. ... The material presented here is thus unique and superior to other reported ZnO electrode coatings. ...

Michael Krumm; Fabian Pawlitzek; Jonas Weickert; Lukas Schmidt-Mende; Sebastian Polarz

2012-11-29T23:59:59.000Z

213

Polycrystalline?thin?film thermophotovoltaic cells  

Science Journals Connector (OSTI)

Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity portability silent operation absence of moving parts reduced air pollution rapid start?up high power densities potentially high conversion efficiencies choice of a wide range of heat sources employing fossil fuels biomass and even solar radiation are key advantages of TPV cells in comparison with fuel cells thermionic and thermoelectric convertors and heat engines. The potential applications of TPV systems include: remote electricity supplies transportation co?generation electric?grid independent appliances and space aerospace and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (10002000 K) black?body or selective radiators is in the 0.50.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1?x Ga x As GaSb and Ga1?x In x Sb. Several polycrystalline thin films such as Hg1?x Cd x Te Sn1?x Cd2x Te2 and Pb1?x Cd x Te etc. have great potential for economic large?scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells e.g. 17.1% for CuIn1?x Ga x Se2 and 15.8% for CdTe. The best recombination?state density N t is in the range of 10?1510?16 cm?3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences possibility of bandgap tailoring and use of selective emitters such as rare earth oxides (erbia holmia yttria) and rare earth?yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto?electronic (infrared detectors lasers and optical communications) technologies. Low bandgaps and larger fluences employed in TPV cells result in very high current densities which make it difficult to collect the current effectively. Techniques for laser and mechanical scribing integral interconnection and multi?junction tandem structures which have been fairly well developed for thin?film PV solar cells could be further refined for enhancing the voltages from TPV modules. Thin?film TPV cells may be deposited on metals or back?surface reflectors. Spectral control elements such as indium?tin oxide or tin oxide may be deposited directly on the TPV convertor. It would be possible to reduce the cost of TPV technologies based on single?crystal materials being developed at present to the range of US$ 25 per watt so as to be competitive in small to medium size commercial applications. However a further cost reduction to the range of US 35$ 1 per watt to reach the more competitive large?scale residential consumer and hybrid?electric car markets would be possible only with the polycrystalline?thin film TPV cells.

Neelkanth G. Dhere

1996-01-01T23:59:59.000Z

214

Solar Energy Materials & Solar Cells 91 (2007) 17261732 Optical and structural properties of Ta2O5CeO2 thin films  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 91 (2007) 1726­1732 Optical and structural properties of Ta2O5

Thirumalai, Devarajan

215

Improvement of CIGS thin-film solar cell performance by optimization of Zn(O,S) buffer layer parameters  

Science Journals Connector (OSTI)

The effects of Zn(O,S) buffer layer parameters on CuInGaSe (CIGS) cell performance are investigated using a physically based solar cell model. The key issue for CIGS solar cells is to remove destructive effec...

Samaneh Sharbati; Sayyed Hossein Keshmiri; J. Tyler McGoffin

2014-10-01T23:59:59.000Z

216

Thin film buried anode battery  

DOE Patents [OSTI]

A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

Lee, Se-Hee (Lakewood, CO); Tracy, C. Edwin (Golden, CO); Liu, Ping (Denver, CO)

2009-12-15T23:59:59.000Z

217

Effect of localized states on the reciprocity between quantum efficiency and electroluminescence in Cu(In,Ga)Se2 and Si thin-film solar cells  

Science Journals Connector (OSTI)

Abstract We present the electroluminescence and quantum efficiency of three different types of thin-film solar cells based on absorbers made from Cu(In,Ga)Se2 as well as from ?c-Si:H and a-Si:H. Simulations of our experimental results show that the main contribution to the electroluminescence spectrum originates from band-to-tail transitions in the case of Cu(In,Ga)Se2, from tail-to-tail transitions in ?c-Si:H, and from tail-to-tail as well as from band-to-midgap-defect transitions in a-Si:H. By comparing the electroluminescence with the quantum efficiency, we analyze the effect of localized states on the optoelectronic reciprocity relation in the three material systems. The relatively steep bandtail density of states in Cu(In,Ga)Se2 is compatible with the reciprocity relation at room temperature while the shallower bandtail density of states in ?c-Si:H and the deep mid-gap defect states in a-Si:H lead to substantial deviations from the reciprocity.

Thomas Christian Mathias Mller; Bart Elger Pieters; Thomas Kirchartz; Reinhard Carius; Uwe Rau

2014-01-01T23:59:59.000Z

218

Zinc oxide thin film acoustic sensor  

SciTech Connect (OSTI)

This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah [Department of Physics , College of Science, Al-Mustansiriyah University, Baghdad (Iraq); Mansour, Hazim Louis [Department of Physics , College of Education, Al-Mustansiriyah University, Baghdad (Iraq)

2013-12-16T23:59:59.000Z

219

Ceramic Thin Films: Fabrication and Applications  

Science Journals Connector (OSTI)

...SPRAYED CERAMIC COATING, JOURNAL...PB1-XCAXTIO3 THIN-FILM GROWN BY...ELECTRICAL, OPTICAL, AND ELECTRO-OPTIC...fabrication and applications. | Ceramics...controlled optical switches...Ceramic coatings ofalumina...modified by the application of mechanical...material as a thin film cannot only...successive coatings. Although...respect to CVD that the...purposes. Applications of Thin Film Ceramics...

M. Sayer; K. Sreenivas

1990-03-02T23:59:59.000Z

220

Synthesis and Characterization of Functional Nanostructured Zinc Oxide Thin Films  

E-Print Network [OSTI]

.1149/1.2357098, copyright The Electrochemical Society 65 #12;66 reduced environmental impact and a minimum undesirable inter-temperature thin film growth technique has been developed to fabricate a new generation of smart and functional and structural requirements of their applications in gas sensors and solar cells. The rapid photothermal

Chow, Lee

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Predictive Modeling for Glass-Side Laser Scribing of Thin Film Photovoltaic Cells  

E-Print Network [OSTI]

:F, CdTe, solar cell INTRODUCTION Thin-film solar cell is a promising technology to achieve in a large-area solar cell. Quality of such scribing contributes to the overall quality and efficiency of the solar cell and therefore predictive capabilities of the process are essential. Limited numerical work

Yao, Y. Lawrence

222

Highly conductive p-type microcrystalline silicon thin films  

SciTech Connect (OSTI)

In the development of thin film solar cells there is presently an increasing interest in microcrystalline silicon, deposited at low temperatures (200--400 C). The plasma deposition of boron doped microcrystalline films was optimized with respect to crystallinity and doping efficiency. High room temperature conductivities up to 39 Scm{sup {minus}1} were achieved under condition when the energy of positive ions impinging on the growth surface is minimized.

Heintze, M.; Schmitt, M. [Univ. Stuttgart (Germany). Inst. fuer Physikalische Elektronik

1996-12-31T23:59:59.000Z

223

Joint Development of Coated Conductor and Low Cost Thin Film Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-007-213  

SciTech Connect (OSTI)

UES plans on developing CIGS thin films by using Metal Organic Deposition (MOD) technique as it is a low-cost, non-vacuum method for scale-up to large area PV modules. NREL will support UES, Inc. through expert processing, characterization and device fabrication. NREL scientists will also help develop a processing phase diagram which includes composition, film thickness, annealing temperature and ambient conditions. Routine measurements of devices and materials will be done under NREL's core support project.

Bhattacharya, R.

2011-02-01T23:59:59.000Z

224

Optically optimal wavelength-scale patterned ITO/ZnO composite coatings for thin film solar cells  

E-Print Network [OSTI]

A new methodology is proposed for finding structures that are, optically speaking, locally optimal : a physical analysis of much simpler structures is used to constrain the optimization process. The obtained designs are based on a flat amorphous silicon layer (to minimize recombination) with a patterned anti-reflective coating made of ITO or ZnO, or a composite ITO/ZnO coating. These latter structures are realistic and present good performances despite very thin active layers.

Moreau, Antoine; Centeno, Emmanuel; Seassal, Christian

2012-01-01T23:59:59.000Z

225

Effects of Cu Diffusion from ZnTe:Cu/Ti Contacts on Carrier Lifetime of CdS/CdTe Thin Film Solar Cells: Preprint  

SciTech Connect (OSTI)

We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime in the CdTe layer is affected by Cu diffusion from the contact.

Gessert, T. A.; Metzger, W. K.; Asher, S. E.; Young, M. R.; Johnston, S.; Dhere, R. G.; Duda, A.

2008-05-01T23:59:59.000Z

226

Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing  

SciTech Connect (OSTI)

In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

Albin, D.; del Cueto, J.

2011-03-01T23:59:59.000Z

227

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents [OSTI]

A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

1998-02-03T23:59:59.000Z

228

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents [OSTI]

A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

Mitlitsky, Fred (Livermore, CA); Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Colella, Nicholas J. (Livermore, CA)

1998-02-03T23:59:59.000Z

229

Institute of Photo Electronic Thin Film Devices and Technology...  

Open Energy Info (EERE)

Institute of Photo Electronic Thin Film Devices and Technology of Nankai University Jump to: navigation, search Name: Institute of Photo-Electronic Thin Film Devices and Technology...

230

Thickness Dependency of Thin Film Samaria Doped Ceria for Oxygen...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Dependency of Thin Film Samaria Doped Ceria for Oxygen Sensing . Thickness Dependency of Thin Film Samaria Doped Ceria for Oxygen Sensing . Abstract: High temperature oxygen...

231

Direct Measurement of Oxygen Incorporation into Thin Film Oxides...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Measurement of Oxygen Incorporation into Thin Film Oxides at Room Temperature Upon Ultraviolet Phton Irradiation. Direct Measurement of Oxygen Incorporation into Thin Film Oxides...

232

NREL: Energy Analysis - Crystalline Silicon and Thin Film Photovoltaic  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Assessment Harmonization Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics (Fact Sheet) Cover of the Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics factsheet Download the Fact Sheet Over the last 30 years, hundreds of life cycle assessments (LCAs) have been conducted and published for a variety of residential and utility-scale solar photovoltaic (PV) systems with wide-ranging results. The inconsistencies in these results can be attributed to the technologies evaluated-such as differing system designs, real-world versus conceptual systems, or technology improvements over time-and life cycle assessment methods and assumptions. To better understand greenhouse gas (GHG) emissions from commercial

233

Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells  

DOE Patents [OSTI]

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO), Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

1998-08-08T23:59:59.000Z

234

Use of 2nd and 3rd Level Correlation Analysis for Studying Degradation in Polycrystalline Thin-Film Solar Cells  

SciTech Connect (OSTI)

The correlation of stress-induced changes in the performance of laboratory-made CdTe solar cells with various 2nd and 3rd level metrics is discussed. The overall behavior of aggregated data showing how cell efficiency changes as a function of open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF) is explained using a two-diode, PSpice model in which degradation is simulated by systematically changing model parameters. FF shows the highest correlation with performance during stress, and is subsequently shown to be most affected by shunt resistance, recombination and in some cases voltage-dependent collection. Large decreases in Jsc as well as increasing rates of Voc degradation are related to voltage-dependent collection effects and catastrophic shunting respectively. Large decreases in Voc in the absence of catastrophic shunting are attributed to increased recombination. The relevance of capacitance-derived data correlated with both Voc and FF is discussed.

Albin, D. S.; del Cueto, J. A.; Demtsu, S. H.; Bansal, S.

2011-03-01T23:59:59.000Z

235

Efficient Light Trapping in Inverted Nanopyramid Thin Crystalline Silicon Membranes for Solar Cell Applications  

E-Print Network [OSTI]

Thin-film crystalline silicon (c-Si) solar cells with light-trapping structures can enhance light absorption within the semiconductor absorber layer and reduce material usage. Here we demonstrate that an inverted nanopyramid ...

Mavrokefalos, Anastassios

236

Polymeric precursor derived nanocrystalline ZnO thin films using EDTA as chelating agent  

E-Print Network [OSTI]

properties, ZnO has plausible electro-optical applications, such as, solar cells [1, 2], light- emitting diodes [3, 4], UV lasers [5], thin film transistors [6,7], and UV photodetectors [8]. Besides

Mohanty, Saraju P.

237

Energy collection and charge transfer processes in thin film photocells and photoelectrochemical cells: Final report  

SciTech Connect (OSTI)

The following paragraphs describe accomplishments and significant results for the two lines of research: (1) studies of energy collection and charge transfer processes in thin film systems and (2) solar energy utilization by photosensitized electrode processes at semiconductor electrodes.

Tachikawa, Hiroyasu

1981-12-31T23:59:59.000Z

238

MELT-MEDIATED LASER CRYSTALLIZATION OF THIN FILM NITI SHAPE MEMORY ALLOYS  

E-Print Network [OSTI]

matrix displays (e.g. LCD and OLED) as well as the active medium in thin film solar cells [4 of furnace, solid phase crystallization parameters (i.e. annealing temperature and dwell time

Yao, Y. Lawrence

239

BDS thin film damage competition  

SciTech Connect (OSTI)

A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

Stolz, C J; Thomas, M D; Griffin, A J

2008-10-24T23:59:59.000Z

240

Amorphous thin films for solar-cell applications. Technical progress report, 11 October 1980 to 15 January 1981  

SciTech Connect (OSTI)

Progress has been ahead of planned expectations in three instances: (a) achievement of 4 mA/cm/sup 2/, short circuit current density in a MIS structure solar cell under AM1 illumination; (b) fabrication of large area (4 cm/sup 2/) MIS cells with external J/sub sc/ > 3 mA/cm/sup 2/; and (c) deposition of p/sup +/ layers by B/sub 2/H/sub 6/ gas phase doping. A program status table is included. Reproducible n layers are now routinely deposited by sputtering in Ar, H/sub 2/, and PH/sub 3/ gases. The major remaining obstacle to the goal of a 3.5% cell is the deposition of a quality i-layer. Although information deduced from infrared absorption and Raman data indicates that most of the hydrogen is bonded in the SiH configuration, the photoconductivity of the intrinsic material requires marked improvement. Two forms of magnetron sputtering, planar and cylindrical, are being exploited. The planar deposition system has the advantage that experimental costs are low; the cylindrical system is easily scalable to large product throughput. Schematic illustrations of the two systems and descriptions of apparatus modifications incorporated are included.

Jonath, A.D.; Anderson, W.W.; Crowley, J.L.; MacMillan H.F. Jr.; Thornton, J.A.

1981-02-20T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Enabling Thin Silicon Solar Cell Technology  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Enabling Thin Silicon Solar Cell Enabling Thin Silicon Solar Cell Technology Enabling Thin Silicon Solar Cell Technology Print Friday, 21 June 2013 10:49 Generic silicon solar cells showing +45°, -45°, and dendritic crack patterns. The effort to shift U.S. energy reliance from fossil fuels to renewable sources has spurred companies to reduce the cost and increase the reliability of their solar photovoltaics (SPVs). The use of thinner silicon in SPV technologies is being widely adopted because it significantly reduces costs; however, silicon is brittle, and thinner silicon, coupled with other recent trends in SPV technologies (thinner glass, lighter or no metal frames, increased use of certain polymers for encapsulation of the silicon cells), is more susceptible to stress and cracking. When the thin

242

Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint  

SciTech Connect (OSTI)

We report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. In CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.

Ullal, H. S.; von Roedern, B.

2007-09-01T23:59:59.000Z

243

Innovative Thin Films LLC | Open Energy Information  

Open Energy Info (EERE)

Thin Films LLC Thin Films LLC Jump to: navigation, search Name Innovative Thin Films LLC Place Toledo, Ohio Zip 43607 Product Provider of altnernative energy thin film deposition technology. Coordinates 46.440613°, -122.847838° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":46.440613,"lon":-122.847838,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

244

Spatial Frequency Filtering Using Nondelineated Thin Films  

Science Journals Connector (OSTI)

We present a new approach for achieving spatial frequency filtering in the analog domain. Our device, the Thin Film Spatial Filter, is a hybrid structure which combines the strengths of analog VLSI technology with the simplicity of a continuous sheet ...

J. Mcelvain; J. Langan; A. J. Heeger

1997-10-01T23:59:59.000Z

245

Visible spectrometer utilizing organic thin film absorption  

E-Print Network [OSTI]

In this thesis, I modeled and developed a spectrometer for the visible wavelength spectrum, based on absorption characteristics of organic thin films. The device uses fundamental principles of linear algebra to reconstruct ...

Tiefenbruck, Laura C. (Laura Christine)

2004-01-01T23:59:59.000Z

246

Development of high-efficiency, thin-film CdTe solar cells. Final subcontract report, 1 February 1992--30 November 1995  

SciTech Connect (OSTI)

This report describes work performed by the Georgia Institute of Technology (GIT) to bring the polycrystalline CdTe cell efficiency a step closer to the practically achievable efficiency of 18% through fundamental understanding of detects and loss mechanisms, the role of chemical and heat treatments, and investigation of now process techniques. The objective was addressed by a combination of in-depth characterization, modeling, materials growth, device fabrication, and `transport analyses of Au/Cu/CdTe/CdS/SnO {sub 2} glass front-wall heterojunction solar cells. GiT attempted to understand the loss mechanism(s) in each layer and interface by a step-by-step investigation of this multilayer cell structure. The first step was to understand, quantify, and reduce the reflectance and photocurrent loss in polycrystalline CdTe solar calls. The second step involved the investigation of detects and loss mechanisms associated with the CdTe layer and the CdTe/CdS interface. The third stop was to investigate the effect of chemical and heat treatments on CdTe films and cells. The fourth step was to achieve a better and reliable contact to CdTe solar cells by improving the fundamental understanding. Of the effects of Cu on cell efficiency. Finally, the research involved the investigation of the effect of crystallinity and grain boundaries on Cu incorporation in the CdTe films, including the fabrication of CdTe solar calls with larger CdTe grain size.

Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Inst. of Tech., Atlanta, GA (United States)

1996-01-01T23:59:59.000Z

247

Photovoltaic Single-Crystalline, Thin-Film Cell Basics | Department of  

Broader source: Energy.gov (indexed) [DOE]

Single-Crystalline, Thin-Film Cell Basics Single-Crystalline, Thin-Film Cell Basics Photovoltaic Single-Crystalline, Thin-Film Cell Basics August 20, 2013 - 2:50pm Addthis Single-crystalline thin films are made from gallium arsenide (GaAs), a compound semiconductor that is a mixture of gallium and arsenic. Gallium arsenide (GaAs) is a compound semiconductor, a mixture of gallium and arsenic. Gallium is a byproduct of the smelting of other metals, notably aluminum and zinc, and it is rarer than gold. Arsenic is not rare, but it is poisonous. Gallium arsenide has been developed for use in solar cells at about the same time that it has been developed for light-emitting diodes, lasers, and other electronic devices that use light. GaAs solar cells offer several benefits: The GaAs bandgap is 1.43 eV-nearly ideal for single-junction solar

248

Thin-film Rechargeable Lithium Batteries  

DOE R&D Accomplishments [OSTI]

Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

Dudney, N. J.; Bates, J. B.; Lubben, D.

1995-06-00T23:59:59.000Z

249

Peeling from a patterned thin elastic film  

E-Print Network [OSTI]

Inspired by the observation that many naturally occurring adhesives arise as textured thin films, we consider the displacement controlled peeling of a flexible plate from an incision-patterned thin adhesive elastic layer. We find that crack initiation from an incision on the film occurs at a load much higher than that required to propagate it on a smooth adhesive surface; multiple incisions thus cause the crack to propagate intermittently. Microscopically, this mode of crack initiation and propagation in geometrically confined thin adhesive films is related to the nucleation of cavitation bubbles behind the incision which must grow and coalesce before a viable crack propagates. Our theoretical analysis allows us to rationalize these experimental observations qualitatively and quantitatively and suggests a simple design criterion for increasing the interfacial fracture toughness of adhesive films.

A. Ghatak; L. Mahadevan; J. Y. Chung; M. K. Chaudhury; V. Shenoy

2004-04-29T23:59:59.000Z

250

Method for making thin polypropylene film  

DOE Patents [OSTI]

An economical method is provided for making uniform thickness polypropylene film as thin as 100 Angstroms. A solution of polypropylene dissolved in xylene is formed by mixing granular polypropylene and xylene together in a flask at an elevated temperature. A substrate, such as a glass plate or microscope slide is immersed in the solution. When the glass plate is withdrawn from the solution at a uniform rate, a thin polypropylene film forms on a flat surface area of the glass plate as the result of xylene evaporation. The actual thickness of the polypropylene film is functional of the polypropylene in xylene solution concentration, and the particular withdrawal rate of the glass plate from the solution. After formation, the thin polypropylene film is floated from the glass plate onto the surface of water, from which it is picked up with a wire hoop.

Behymer, R.D.; Scholten, J.A.

1985-11-21T23:59:59.000Z

251

SINGLE AND DUAL LAYER THIN FILM BULGE TESTING  

E-Print Network [OSTI]

film windows that are used in Next Generation Lithography masks and certain MEMS devices. The bulge testing method measures the mechanical properties of a thin film by isolating it in a thin film window of the system. Figure 6 Dual Layer Thin Film Membrane Window For a dual layer membrane the effective total

Huston, Dryver R.

252

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES  

E-Print Network [OSTI]

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES S. Suresh1 , T.-G. Nieh2 and B.W. Choi2: Mechanical properties; Nano-indentation; Thin films; Copper; Dislocations Introduction Indentation methods films on substrates (e.g., [2,3]) using instrumented indentation. Nano-indentation studies of thin films

Suresh, Subra

253

A high performance thin film thermoelectric cooler  

SciTech Connect (OSTI)

Thin film thermoelectric devices with small dimensions have been fabricated using microelectronics technology and operated successfully in the Seebeck mode as sensors or generators. However, they do not operate successfully in the Peltier mode as coolers, because of the thermal bypass provided by the relatively thick substrate upon which the thermoelectric device is fabricated. In this paper a processing sequence is described which dramatically reduces this thermal bypass and facilitates the fabrication of high performance integrated thin film thermoelectric coolers. In the processing sequence a very thin amorphous SiC (or SiO{sub 2}SiN{sub 4}) film is deposited on a silicon substrate using conventional thin film deposition and a membrane formed by removing the silicon substrate over a desired region using chemical etching or micro-machining. Thermoelements are deposited on the membrane using conventional thin film deposition and patterning techniques and configured so that the region which is to be cooled is abutted to the cold junctions of the Peltier thermoelements while the hot junctions are located at the outer peripheral area which rests on the silicon substrate rim. Heat is pumped laterally from the cooled region to the silicon substrate rim and then dissipated vertically through it to an external heat sink. Theoretical calculations of the performance of a cooler described above indicate that a maximum temperature difference of about 40--50K can be achieved with a maximum heat pumping capacity of around 10 milliwatts.

Rowe, D.M.; Min, G.; Volklein, F.

1998-07-01T23:59:59.000Z

254

The research field of thin-film photovoltaics of the department of energy-and semiconductor research (EHF) of the institute of physics at the Carl-von-Ossietzky University of Oldenburg  

E-Print Network [OSTI]

The research field of thin-film photovoltaics of the department of energy- and semiconductor and calibration of an optical simulation for thin-film solar cells In recent years, the photovoltaic has become is necessary to let photovoltaic remain economical attractive. Thin-film solar cells on basis of Cu(In,Ga)Se2

Peinke, Joachim

255

Formosun Solar Corp | Open Energy Information  

Open Energy Info (EERE)

search Name: Formosun Solar Corp. Place: Hsinchu County, Taiwan Zip: 303-51 Sector: Solar Product: Thin-film solar cell producer based in Taiwan. References: Formosun Solar...

256

May 2003 NREL/CP-520-33933 Amorphous and Thin-Film  

E-Print Network [OSTI]

Roedern, J. Yang, P. Sims, X. Deng, V. Dalal, D. Carlson, and T. Wang Presented at the National and Thin-Film Silicon Brent P. Nelson,1 Harry A. Atwater,2 Bolko von Roedern,1 Jeff Yang,3 Paul Sims,4. (c) "Thin Silicon-on-Ceramic Solar Cells" by Paul Sims. (d

Deng, Xunming

257

Photovoltaic Polycrystalline Thin-Film Cell Basics | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Polycrystalline Thin-Film Cell Basics Polycrystalline Thin-Film Cell Basics Photovoltaic Polycrystalline Thin-Film Cell Basics August 20, 2013 - 2:36pm Addthis Polycrystalline thin-film cells are made of many tiny crystalline grains of semiconductor materials. The materials used in these cells have properties that are different from those of silicon. Thin-film cells have many advantages over their thick-film counterparts. For example, they use much less material. The cell's active area is usually only 1 to 10 micrometers thick, whereas thick films typically are 100 to 300 micrometers thick. Also, thin-film cells can usually be manufactured in a large-area process, which can be an automated, continuous production process. Finally, they can be deposited on flexible substrate materials. The term thin film comes from the method used to deposit the film, not from

258

Superhydrophobic Thin Film Symposium | ornl.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Superhydrophobic Thin Film Symposium Superhydrophobic Thin Film Symposium Sep 05 2012 12:00 AM - 05:00 PM Hosted by Oak Ridge Laboratory's Partnerships Directorate and focusing on the recent LDRD Launch project work completed by Dr. Tolga Aytug and Dr. John T. Simpson (ORNL research PI's). Oak Ridge, TN Oak Ridge National Laboratory CONTACT : Email: Cassie Lopez Phone:(865) 576-9294 Add to Calendar SHARE Hosted by Oak Ridge Laboratory's Partnerships Directorate and focusing on the recent LDRD Launch project work completed by Dr. Tolga Aytug and Dr. John T. Simpson (ORNL research PI's). Purpose To share the ORNL Superhydrophonbic Thin Film technology to prospective commercial partners. Date and Time The conference will be held on the morning of Wednesday September 5th at Oak Ridge National Laboratory (ORNL) by Partnerships and Technology

259

Thin Film Transistors On Plastic Substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

2004-01-20T23:59:59.000Z

260

Vibration welding system with thin film sensor  

DOE Patents [OSTI]

A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

2014-03-18T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

The reversal of the laser-beam-induced-current contrast with varying illumination density in a Cu{sub 2}ZnSnSe{sub 4} thin-film solar cell  

SciTech Connect (OSTI)

We apply an array of correlated spatially-resolved techniques, including ?-Raman/photoluminescence/reflectance/laser-beam-induced-current in conjunction with scanning electron microscopy and atomic force microscopy, to study the impact of the microscopic-scale thickness inhomogeneity of CdS layer in a Cu{sub 2}ZnSnSe{sub 4} thin-film solar cell. Thicker CdS regions are found to cause more light reflecting loss thus yield lower external quantum efficiencies and energy conversion efficiencies than the general area. However, these regions show much less efficiency degradation at high illumination intensity, leading to an inversion of laser-beam-induced-current contrast in the area mapping. While improving the CdS layer uniformity can boost the device performance, the finding further points out the possibility of operating thin-film photovoltaic devices based on the similar materials (such as CuInGaSe{sub 2}, CdTe, Cu{sub 2}ZnSn(S,Se){sub 4}) under a substantially higher illumination density for concentrated photovoltaic and photo-detection.

Chen, Qiong; Zhang, Yong, E-mail: yong.zhang@uncc.edu [Department of Electrical and Computer Engineering, and Energy Production and Infrastructure Center (EPIC), The University of North Carolina at Charlotte, Charlotte, North Carolina 28223 (United States)] [Department of Electrical and Computer Engineering, and Energy Production and Infrastructure Center (EPIC), The University of North Carolina at Charlotte, Charlotte, North Carolina 28223 (United States)

2013-12-09T23:59:59.000Z

262

Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface  

SciTech Connect (OSTI)

The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5+2)nm after SPC could be estimated.

Bar, M.; Wimmer, M.; Wilks, R. G.; Roczen, M.; Gerlach, D.; Ruske, F.; Lips, K.; Rech, B.; Weinhardt, L.; Blum, M.; Pookpanratana, S.; Krause, S.; Zhang, Y.; Heske, C.; Yang, W.; Denlinger, J. D.

2010-04-30T23:59:59.000Z

263

Organic thin film prehistory: looking towards solution phase aggregation |  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Organic thin film prehistory: looking towards solution phase aggregation Organic thin film prehistory: looking towards solution phase aggregation Wednesday, November 6, 2013 - 3:00pm SLAC, Redtail Hawk Conference Room 108A Christopher Tassone, SSRL Polymer bulk heterojunction (BHJ) solar cells have attracted significant attention in industry and academia because of their potential for achieving large-area, light-weight, and flexible photovoltaic devices through cost-effective solution deposition techniques. These devices consist of a blend of an absorbing polymer and an electron accepting fullerene, the molecular packing and phase segregation of which heavily influence power conversion efficiency by effecting important processes such as exciton splitting, charge transport, and recombination. Understanding and utilization of molecular interactions to predicatively control the

264

SAW determination of surface area of thin films  

DOE Patents [OSTI]

N.sub.2 adsorption isotherms are measured from thin films on SAW devices. The isotherms may be used to determine the surface area and pore size distribution of thin films.

Frye, Gregory C. (Albuquerque, NM); Martin, Stephen J. (Albuquerque, NM); Ricco, Antonio J. (Albuquerque, NM)

1990-01-01T23:59:59.000Z

265

Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by Oxygen-plasma-assisted Molecular Beam Epitaxy. Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by...

266

Investigation of Solar Energy Transfer through Plasmonic Au Nanoparticle-doped Sol-derived TiO? Thin Films in Photocatalysis and Photovoltaics /  

E-Print Network [OSTI]

SAN DIEGO Investigation of Solar Energy Transfer through20 Solar Energy Conversion ThroughOF THE THESIS Investigation of Solar Energy Transfer through

Zelinski, Andrew

2013-01-01T23:59:59.000Z

267

THIN FILM MECHANICS BULGING AND Ph.D Dissertation  

E-Print Network [OSTI]

for the intensive effort in research in materials and processing techniques. Thin film windows are window underneath. The thin film window has such a small thickness to span ratio that it can usually be considered and precision-stretching of thin film windows are examined. Bulge Testing is a method used to evaluate

Huston, Dryver R.

268

Spectroscopic ellipsometry characterization of thin-film silicon nitride  

SciTech Connect (OSTI)

We have measured and analyzed the optical characteristics of a series of silicon nitride thin films prepared by plasma-enhanced chemical vapor deposition on silicon substrates for photovoltaic applications. Spectroscopic ellipsometry measurements were made by using a two-channel spectroscopic polarization modulator ellipsometer that measures N, S, and C data simultaneously. The data were fit to a model consisting of air / roughness / SiN / crystalline silicon. The roughness was modeled using the Bruggeman effective medium approximation, assuming 50% SiN, 50% voids. The optical functions of the SiN film were parameterized using a model by Jellison and Modine. All the {Chi}{sup 2} are near 1, demonstrating that this model works extremely well for all SiN films. The measured dielectric functions were used to make optimized SiN antireflection coatings for crystalline silicon solar cells.

Jellison, G.E. Jr.; Modine, F.A. [Oak Ridge National Lab., TN (United States); Doshi, P.; Rohatgi, A. [Georiga Inst. of Technology, Atlanta, GA (United States)

1997-05-01T23:59:59.000Z

269

Enhanced Thin Film Organic Photovoltaic Devices  

Energy Innovation Portal (Marketing Summaries) [EERE]

A novel structure design for thin film organic photovoltaic (OPV) devices provides a system for increasing the optical absorption in the active layer. The waveguided structure permits reduction of the active layer thickness, resulting in enhanced charge collection and extraction, leading to improved power conversion efficiency compared to standard OPV devices....

2014-01-10T23:59:59.000Z

270

NANOCOMPOSITE ENABLED SENSITIZED SOLAR CELL  

E-Print Network [OSTI]

in all thin-film solar cell technologies is that absorbancecells. These emerging solar cell technologies have undergonethe various solar cell technologies and their progress as

Phuyal, Dibya

2012-01-01T23:59:59.000Z

271

Control of morphology for enhanced electronic transport in PECVD-grown a-Si : H Thin Films  

E-Print Network [OSTI]

Solar cells have become an increasingly viable alternative to traditional, pollution causing power generation methods. Although crystalline silicon (c-Si) modules make up most of the market, thin films such as hydrogenated ...

Castro Galnares, Sebastin

2010-01-01T23:59:59.000Z

272

A thin film transistor driven microchannel device  

E-Print Network [OSTI]

= [8] 25 where n = 4 for the ideal case. However, based on experimental results, typical values for n are between 1 and 2.22 In any case, the larger potential drop appears at the smaller electrode. 2.4. PECVD Thin Film Silicon nitride film... can be deposited by a low-pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD). Table II shows a comparison of silicon nitride?s physical properties between two deposition methods. The PECVD silicon...

Lee, Hyun Ho

2005-02-17T23:59:59.000Z

273

Nitrogen doped zinc oxide thin film  

SciTech Connect (OSTI)

To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

Li, Sonny X.

2003-12-15T23:59:59.000Z

274

Thin film photovoltaic panel and method  

DOE Patents [OSTI]

A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

Ackerman, Bruce (El Paso, TX); Albright, Scot P. (El Paso, TX); Jordan, John F. (El Paso, TX)

1991-06-11T23:59:59.000Z

275

Structures for dense, crack free thin films  

DOE Patents [OSTI]

The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

Jacobson, Craig P. (Lafayette, CA); Visco, Steven J. (Berkeley, CA); De Jonghe, Lutgard C. (Lafayette, CA)

2011-03-08T23:59:59.000Z

276

An Investigation of the Properties of Silicon Nitride (SiNx) Thin Films Prepared by RF Sputtering for Application in Solar Cell Technology  

Science Journals Connector (OSTI)

Silicon nitride films deposited on glass and multicrystalline silicon by RF sputtering with power between 100350W. The target was hot pressed Si3N4 ceramic. The morphology and optical properties of films are inv...

Negin Manavizadeh; Alireza Khodayari

2009-01-01T23:59:59.000Z

277

Fracture patterns in thin films and multilayers Alex A. Volinsky  

E-Print Network [OSTI]

Fracture patterns in thin films and multilayers Alex A. Volinsky University of South Florida, excessive residual and externally applied stresses cause film fracture. In the case of tensile stress is the key for causing thin film fracture, either in tension, or compression, it is the influence

Volinsky, Alex A.

278

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents [OSTI]

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

279

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents [OSTI]

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1996-01-01T23:59:59.000Z

280

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents [OSTI]

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells. 4 figures.

Lauf, R.J.

1994-04-26T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents [OSTI]

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells. 4 figs.

Lauf, R.J.

1996-04-02T23:59:59.000Z

282

Fabrication Of Multilayered Thin Films Via Spin-Assembly  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Fabrication Of Multilayered Thin Films Via Spin-Assembly Fabrication Of Multilayered Thin Films Via Spin-Assembly Fabrication Of Multilayered Thin Films Via Spin-Assembly A process of forming multilayer thin film heterostructures. Available for thumbnail of Feynman Center (505) 665-9090 Email Fabrication Of Multilayered Thin Films Via Spin-Assembly A process of forming multilayer thin film heterostructures is disclosed and includes applying a solution including a first water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species onto a substrate to form a first coating layer on the substrate, drying the first coating layer on the substrate, applying a solution including a second water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species

283

Investigation of Solar Energy Transfer through Plasmonic Au Nanoparticle-doped Sol-derived TiO? Thin Films in Photocatalysis and Photovoltaics /  

E-Print Network [OSTI]

in Photocatalysis and Photovoltaics A Thesis submitted inFilms in Photocatalysis and Photovoltaics by Andrew Zelinskiinvestigated for use in photovoltaics and as photocatalysts,

Zelinski, Andrew

2013-01-01T23:59:59.000Z

284

Fluorination of amorphous thin-film materials with xenon fluoride  

DOE Patents [OSTI]

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

Weil, R.B.

1987-05-01T23:59:59.000Z

285

Apparatus and Method for Fabricating Thin Film Devices using...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

method for manufacturing thin-films was developed specifically for fabrication of CdSCdTe photovoltaic modules. However, this innovation should perform excellently for any...

286

Investigation of Solar Energy Transfer through Plasmonic Au Nanoparticle-doped Sol-derived TiO? Thin Films in Photocatalysis and Photovoltaics /  

E-Print Network [OSTI]

solar-to-fuel and photovoltaic energy conversion through TiOplasmonic photovoltaic and photocatalytic energy transferto-fuel energy conversion or photovoltaic applications. The

Zelinski, Andrew

2013-01-01T23:59:59.000Z

287

Recent improvements in materials for thin GaAs and multibandgap solar cells  

SciTech Connect (OSTI)

The High Efficiency Concepts Program at SERI supports research on III-V compound semiconductors with the objective of achieving the maximum attainable photovoltaic conversion efficiencies for terrestrial solar electric power. The outcome of this research may also affect the future of space photovoltaic cells. While the interest in thin-film, high-efficiency solar cells for terrestrial applications is driven principally by consideration of system costs, such cells would also improve the power density of space power arrays.

Benner, J.P.

1985-05-01T23:59:59.000Z

288

SunShot Concentrating Solar Power Program Review 2013 | Department...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Films and Panels for Next Generation Solar Collectors, Attila Molnar, 3M Company Low-Cost Light Weight Thin Film Solar Concentrators, Gani Ganapathi, Jet Propulsion Laboratory...

289

Thin film photovoltaic device with multilayer substrate  

DOE Patents [OSTI]

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Catalano, Anthony W. (Rushland, PA); Bhushan, Manjul (Wilmington, DE)

1984-01-01T23:59:59.000Z

290

Method of improving field emission characteristics of diamond thin films  

DOE Patents [OSTI]

A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

Krauss, Alan R. (Naperville, IL); Gruen, Dieter M. (Downer Grove, IL)

1999-01-01T23:59:59.000Z

291

Method of improving field emission characteristics of diamond thin films  

DOE Patents [OSTI]

A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.

Krauss, A.R.; Gruen, D.M.

1999-05-11T23:59:59.000Z

292

Study of molybdenum oxide as a back contact buffer for thin film n-CdS/p-CdTe solar cells.  

E-Print Network [OSTI]

??Back contact improvement is one of the most crucial issues for the realization of highly efficient n-CdS/p-CdTe solar cells. Conventional methods for making a sufficiently (more)

Lin, Hao

2013-01-01T23:59:59.000Z

293

Project Profile: Development and Productization of High-Efficiency, Low-Cost Building-Integrated PV Shingles Using Monocrystalline Silicon Thin-Film Solar Cells  

Broader source: Energy.gov [DOE]

The Solexel-OC team is developing a BIPV roofing shingle product that includes low-profile solar modules and a unique attachment system that will be fastened directly to the roof and incorporates...

294

Apparatus for laser assisted thin film deposition  

DOE Patents [OSTI]

A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

Warner, B.E.; McLean, W. II

1996-02-13T23:59:59.000Z

295

Rechargeable thin-film lithium batteries  

SciTech Connect (OSTI)

Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

1993-09-01T23:59:59.000Z

296

Thin-film Rechargeable Lithium Batteries  

DOE R&D Accomplishments [OSTI]

Rechargeable thin films batteries with lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. The cathodes include TiS{sub 2}, the {omega} phase of V{sub 2}O{sub 5}, and the cubic spinel Li{sub x}Mn{sub 2}O{sub 4} with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The development of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25 C of 2 {mu}S/cm. Thin film cells have been cycled at 100% depth of discharge using current densities of 2 to 100 {mu}A/cm{sup 2}. The polarization resistance of the cells is due to the slow insertion rate of Li{sup +} ions into the cathode. Chemical diffusion coefficients for Li{sup +} ions in the three types of cathodes have been estimated from the analysis of ac impedance measurements.

Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, X.

1993-11-00T23:59:59.000Z

297

Experimental characterisations of thin film transmission line losses  

E-Print Network [OSTI]

Experimental characterisations of thin film transmission line losses D. Kim, H. Kim and Y. Eo New frequency-variant losses of planar thin film transmission lines are experimentally investigated in a broad frequency range. The fre- quency-variant transmission line parameters are accurately determined

298

Avalanches through windows: Multiscale visualization in magnetic thin films  

E-Print Network [OSTI]

Avalanches through windows: Multiscale visualization in magnetic thin films Alessandro Magni, Cornell University, Ithaca, NY 14853-2501 Abstract--The dynamics of domain walls motion in thin films dynamics, but are strongly dependent on the size of the windows chosen. Here we investigate how to properly

Sethna, James P.

299

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors  

Science Journals Connector (OSTI)

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (?-HfIZO) thin film transistors (TFTs). Co-sputtering-processed ?-HfIZO thin films have shown an amorphous phase in nature. ...

Sheng-Po Chang; San-Syong Shih

2012-01-01T23:59:59.000Z

300

Microstructure and properties of copper thin films on silicon substrates  

E-Print Network [OSTI]

copper thin films but on an expense of conductivity. This study proposes a technique to deposit high strength and high conductivity copper thin films on different silicon substrates at room temperature. Single crystal Cu (100) and Cu (111) have been grown...

Jain, Vibhor Vinodkumar

2009-05-15T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

APPLIED PHYSICS REVIEWS Erbium implanted thin film photonic materials  

E-Print Network [OSTI]

, phosphosilicate, borosilicate, and soda-lime glasses , ceramic thin films Al2O3, Y2O3, LiNbO3 , and amorphous. Phosphosilicate glass. . . . . . . . . . . . . . . . . . . . . . 7 C. Soda-lime silicate glass Er-doped thin film photonic materials is described. It focuses on oxide glasses pure SiO2

Polman, Albert

302

Advanced Thin Film Thermoelectric Systems forEfficient Air-Conditioner...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Thin Film Thermoelectric Systems forEfficient Air-Conditioners Advanced Thin Film Thermoelectric Systems forEfficient Air-Conditioners Presents recent advances in thermoelectric...

303

High-Throughput Thin Film Approach for Screening of Temperature-Pressure-Composition Phase Space  

SciTech Connect (OSTI)

Many solar energy technologies, for example CIGS and CdTe photovoltaics, utilize materials in thin film form. The equilibrium phase diagrams for these and other more novel solar energy materials are not known or are irrelevant because of the non-equilibrium character of the thin film growth processes. We demonstrate a high-throughput thin film approach for screening of temperature-pressure-composition phase diagrams and phase spaces. The examples in focus are novel solar absorbers Cu-N, Cu-O and p-type transparent conductors in the Cr2O3-MnO system. The composition axis of the Cr2O3-MnO phase diagram was screened using a composition spread method. The temperature axis of the Mn-O phase diagram was screened using a temperature spread method. The pressure axes of the Cu-N and Cu-O phase diagrams were screened using rate spread method with the aid of non-equilibrium growth phenomena. Overall these three methods constitute an approach to high-throughput screening of inorganic thin film phase diagrams. This research is supported by U.S. Department of Energy as a part of two NextGen Sunshot projects and an Energy Frontier Research Center.

Zakutayev, A.; Subramaniyan, A.; Caskey, C. M.; Ndione, P. F.; Richards, R. M.; O'Hayre, R.; Ginley, D. S.

2013-01-01T23:59:59.000Z

304

The Making of the Film, SOLAR CORONA  

E-Print Network [OSTI]

The film SOLAR CORONA was made from data taken from August 14, 1969 through May 7, 1970, by OSO-VI, one of the Orbiting Satellite Observatories. One of the experiments on board scanned across and up and down the image of ...

Beeler, Michael

1973-02-01T23:59:59.000Z

305

Characterization of Field Exposed Thin Film Modules: Preprint  

SciTech Connect (OSTI)

Test arrays of thin film modules have been deployed at the Solar Energy Centre near New Delhi, India since 2002-2003. Performances of these arrays were reported by O.S. Sastry [1]. This paper reports on NREL efforts to support SEC by performing detailed characterization of selected modules from the array. Modules were selected to demonstrate both average and worst case power loss over the 8 years of outdoor exposure. The modules characterized included CdTe, CIS and three different types of a-Si. All but one of the a-Si types were glass-glass construction. None of the modules had edge seals. Detailed results of these tests are presented along with our conclusions about the causes of the power loss for each technology.

Wohlgemuth, J. H.; Sastry, O. S.; Stokes, A.; Singh, Y. K.; Kumar, M.

2012-06-01T23:59:59.000Z

306

Role of Anions in Aqueous SolGel Process Enabling Flexible Cu(In,Ga)S2 Thin-Film Solar Cells  

Science Journals Connector (OSTI)

(1, 2) Todorov et al. demonstrated that solution process-based devices can achieve high performance, along with economical synthetic production. ... All binding energies were readjusted with respect to carbon. ... Solar Energy (2004), 77 (6), 685-695 CODEN: SRENA4; ISSN:0038-092X. ...

Yunjung Oh; Kyoohee Woo; Daehee Lee; Hongseuk Lee; Kyujin Kim; Inhyuk Kim; Zhaoyang Zhong; Sunho Jeong; Jooho Moon

2014-09-29T23:59:59.000Z

307

Thin film adhesion by nanoindentation-induced superlayers. Final report  

SciTech Connect (OSTI)

This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

Gerberich, William W.; Volinsky, A.A.

2001-06-01T23:59:59.000Z

308

Shengrui Solar | Open Energy Information  

Open Energy Info (EERE)

Shengrui Solar Jump to: navigation, search Name: Shengrui Solar Place: Hong Kong Product: Hong Kong headquartered company with thin-film PV production in China. References:...

309

Adaptation of thin-film photovoltaic technology for use in space  

SciTech Connect (OSTI)

The anticipated deployment of large numbers of satellites in low earth orbit (LEO) for global telecommunications networks renews interest in producing solar power systems that are lightweight, robust, resistant to radiation damage, and relatively inexpensive. Promising near term thin-film candidates are amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). The authors discuss the modifications that are necessary to adapt terrestrial thin-film technology for use in space. The authors characterize expected module performance and present results of tests performed on sample cells. They consider the possibility of achieving aggressive cost, weight, and performance targets through the use of thin-film photovoltaic (PV) technology.

Fairbanks, E.S.; Gates, M.T. [Boeing Commercial Space Co., Seattle, WA (United States)

1997-12-31T23:59:59.000Z

310

Modeling and simulation of CuIn{sub 1?x}Ga{sub x}Se{sub 2} based thin film solar cell  

SciTech Connect (OSTI)

In this work, CIGS (Copper Indium Gallium Diselenide) based solar cell structure has been simulated. We have been calculated short circuit current, open circuit voltage and efficiency of the cell. The thickness of the absorption layer is varied from 400 to 3000 nm, keeping the thickness of other layers unchanged. The effect of absorption layer thickness over cell performance has been analyzed and found that the efficiency increases upto 22% until the thickness of the absorption layer reaches around 2000 nm.

Kumari, S., E-mail: sarita.kumari132@gmail.com; Verma, A. S. [Department of Physics, Banasthali University, Rajasthan-304022 (India); Singh, P.; Gautam, R. [Department of Electronics and Communication, Krishna Institute of Engg. and Tech., Ghaziabad-201206 (India)

2014-04-24T23:59:59.000Z

311

The novel usage of spectroscopic ellipsometry for the development of amorphous Si solar cells  

E-Print Network [OSTI]

May 2010 Keywords: a-Si:H Thin film Si solar cell Spectroscopic ellipsometry (SE) a b s t r a c t We analyzed with relation to structural and electrical properties of a-Si:H thin film for solar cell and faster methodology to develop a-Si:H thin film for thin film Si solar cells using SE measurements

Park, Byungwoo

312

Glow discharge plasma deposition of thin films  

DOE Patents [OSTI]

A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

Weakliem, Herbert A. (Pennington, NJ); Vossen, Jr., John L. (Bridgewater, NJ)

1984-05-29T23:59:59.000Z

313

Thin Film Femtosecond Laser Damage Competition  

SciTech Connect (OSTI)

In order to determine the current status of thin film laser resistance within the private, academic, and government sectors, a damage competition was started at the 2008 Boulder Damage Symposium. This damage competition allows a direct comparison of the current state of the art of high laser resistance coatings since they are tested using the same damage test setup and the same protocol. In 2009 a high reflector coating was selected at a wavelength of 786 nm at normal incidence at a pulse length of 180 femtoseconds. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials and layer count, and spectral results will also be shared.

Stolz, C J; Ristau, D; Turowski, M; Blaschke, H

2009-11-14T23:59:59.000Z

314

Method for making surfactant-templated thin films  

DOE Patents [OSTI]

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (New Orleans, LA); Fan, Hong You (Albuquerque, NM)

2010-08-31T23:59:59.000Z

315

Method for making surfactant-templated thin films  

DOE Patents [OSTI]

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

2002-01-01T23:59:59.000Z

316

Manufacture of Thin-Film Solar Cells:? Modeling and Control of Cu(InGa)Se2 Physical Vapor Deposition onto a Moving Substrate  

Science Journals Connector (OSTI)

It was developed at ITN Energy Systems in Littleton, CO, and Global Solar Energy in Tucson, AZ;3 the experimental deposition system described in this paper does not have an XRF sensor installed. ... The main advantage of the finite difference approach is that it is a continuous technique and, therefore, is better suited for including mass transfer or reaction kinetics. ... Because the decoupled deposition process is only single-input?single-output with simple constraints (flow rates cannot be negative), internal model control can potentially combine the advantages of unconstrained MPC, but avoid its disadvantages. ...

S. Tobias Junker; Robert W. Birkmire; Francis J. Doyle; III

2003-12-17T23:59:59.000Z

317

Josephson junction in a thin film  

SciTech Connect (OSTI)

The phase difference {phi}(y) for a vortex at a line Josephson junction in a thin film attenuates at large distances as a power law, unlike the case of a bulk junction where it approaches exponentially the constant values at infinities. The field of a Josephson vortex is a superposition of fields of standard Pearl vortices distributed along the junction with the line density {phi}'(y)/2{pi}. We study the integral equation for {phi}(y) and show that the phase is sensitive to the ratio l/{Lambda}, where l={lambda}{sub J}{sup 2}/{lambda}{sub L}, {Lambda}=2{lambda}{sub L}{sup 2}/d, {lambda}{sub L}, and {lambda}{sub J} are the London and Josephson penetration depths, and d is the film thickness. For l<<{Lambda}, the vortex ''core'' of the size l is nearly temperature independent, while the phase ''tail'' scales as l{Lambda}/y{sup 2}={lambda}{sub J}2{lambda}{sub L}/d/y{sup 2}; i.e., it diverges as T{yields}T{sub c}. For l>>{Lambda}, both the core and the tail have nearly the same characteristic length l{Lambda}.

Kogan, V. G.; Dobrovitski, V. V.; Clem, J. R.; Mawatari, Yasunori; Mints, R. G.

2001-04-01T23:59:59.000Z

318

FABRICATION AND CHARACTERIZATION OF 3-D ALL POLYMER FLEXIBLE SOLAR CELL  

E-Print Network [OSTI]

....................................................................................3 2 LITERATURE SURVEY ON THIN FILM ANDORGANIC/TANDEM SOLAR CELL........................................................................7 2.3 Thin Film Solar CellFABRICATION AND CHARACTERIZATION OF 3-D ALL POLYMER FLEXIBLE SOLAR CELL _______________ A Thesis

Kassegne, Samuel Kinde

319

Bulge testing of single and dual layer thin films Dryver R. Huston*ab  

E-Print Network [OSTI]

to a thin film window. By comparing the pressure- displacement relation with a mechanical model, the elastic structures, such as the thin film windows that are used in Next Generation Lithography masks and certain MEMS it in a thin film window. Thin film windows are fabricated by removing the thick substrate out from underneath

Huston, Dryver R.

320

CompositionStructureFunction Diagrams of TiNiAu Thin Film Shape Memory Alloys  

Science Journals Connector (OSTI)

thin films; annealing; high temperature shape memory alloys; combinatorial materials science; phase transformation ...

Pio John S. Buenconsejo; Alfred Ludwig

2014-11-04T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Substrate Effect on the Melting Temperature of Thin Polyethylene Films M. Rafailovich,1,* J. Sokolov,1  

E-Print Network [OSTI]

Substrate Effect on the Melting Temperature of Thin Polyethylene Films Y. Wang,1 M. Rafailovich,1 polyethylene thin films. The Tm decreases with the film thickness decrease when the film is thinner than that the degree of crystal- linity of polyethylene (PE) remained high even in films as thin as 15 nm [5]. A novel

322

Chemical analysis of thin films at Sandia National Laboratories  

SciTech Connect (OSTI)

The characterization of thin films produced by chemical and physical vapor deposition requires special analytical techniques. When the average compositions of the films are required, dissolution of the thin films and measurement of the concentrations of the solubilized species is the appropriate analytical approach. In this report techniques for the wet chemical analysis of thin films of Si:Al, P/sub 2/O/sub 5/:SiO/sub 2/, B/sub 2/O/sub 3/:SiO/sub 2/, TiB/sub x/ and TaB/sub x/ are described. The analyses are complicated by the small total quantities of these analytes present in the films, the refractory characters of these analytes, and the possibility of interferences from the substrates on which the films are deposited. Etching conditions are described which dissolve the thin films without introducing interferences from the substrates. A chemical amplification technique and inductively coupled plasma atomic emission spectrometry are shown to provide the sensitivity required to measure the small total quantities (micrograms to milligrams) of analytes present. Also the chemical analysis data has been used to calibrate normal infrared absorption spectroscopy to give fast estimates of the phosphorus and/or boron dopant levels in thin SiO/sub 2/ films.

Tallant, D.R.; Taylor, E.L.

1980-05-01T23:59:59.000Z

323

Casimir effect for thin films from imperfect materials  

E-Print Network [OSTI]

We propose an approach for investigation of interaction of thin material films with quantum electrodynamic fields. Using main principles of quantum electrodynamics (locality, gauge invariance, renormalizability) we construct a single model for Casimir-like phenomena arising near the film boundary on distances much larger then Compton wavelength of the electron where fluctuations of Dirac fields are not essential. In this model the thin film is presented by a singular background field concentrated on a 2-dimensional surface. All properties of the film material are described by one dimensionless parameter. For two parallel plane films we calculate the photon propagator and the Casimir force, which appears to be dependent on film material and can be both attractive and repulsive. We consider also an interaction of plane film with point charge and straight line current. Here, besides usual results of classical electrodynamics the model predicts appearance of anomalous electric and magnetic fields.

V. N. Markov; Yu. M. Pis'mak

2006-06-04T23:59:59.000Z

324

TI--CR--AL--O thin film resistors  

DOE Patents [OSTI]

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Jankowski, Alan F. (Livermore, CA); Schmid, Anthony P. (Solana Beach, CA)

2000-01-01T23:59:59.000Z

325

Functionalized multilayer thin films for protection against acutely toxic agents  

E-Print Network [OSTI]

The recently developed practice of spraying polyelectrolyte solutions onto a substrate in order to construct thin films via the Layer-by-Layer (LbL) technique has been further investigated and extended. In this process a ...

Krogman, Kevin Christopher

2009-01-01T23:59:59.000Z

326

Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)  

SciTech Connect (OSTI)

This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

Not Available

2013-06-01T23:59:59.000Z

327

National High Magnetic Field Laboratory: Magnetic Thin Films  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

recorded work with magnetic thin films took place in the 1880s and was carried out by German physicist August Kundt. Well known for his research on sound and optics, Kundts...

328

Picosecond laser ablation of nano-sized WTi thin film  

Science Journals Connector (OSTI)

Interaction of an Nd:YAG laser, operating at 532 nm wavelength and pulse duration of 40 ps, with tungsten-titanium (WTi) thin film (thickness, 190 nm)...2...were found to be sufficient for modification of the WTi

S. Petrovi?; B. Gakovi?; D. Peruko; T. Desai; D. Batani; M. ?ekada

2009-08-01T23:59:59.000Z

329

Quasi-Reversible Oxygen Exchange of Amorphous IGZO Thin Films  

E-Print Network [OSTI]

Center In situ electrical properties of a-IGZO thin films were carried out at 200ºC as a function of carrier content vs. pO2) analysis should be applicable for studying the underlying carrier generation

Shahriar, Selim

330

Flexible, transparent thin film transistors raise hopes for flexible...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

screens and displays. Virtually all flat-screen TVs and smartphones are made up of thin film transistors today; they form the basis of both LEDs and LCDs (liquid crystal...

331

Role of Microstructural Phenomena in Magnetic Thin Films. Final Report  

SciTech Connect (OSTI)

Over the period of the program we systematically varied microstructural features of magnetic thin films in an attempt to better identify the role which each feature plays in determining selected extrinsic magnetic properties. This report summarizes the results.

Laughlin, D. E.; Lambeth, D. N.

2001-04-30T23:59:59.000Z

332

Self-Assembling Process for Fabricating Tailored Thin Films  

ScienceCinema (OSTI)

A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

Sandia

2009-09-01T23:59:59.000Z

333

Self-Assembling Process for Fabricating Tailored Thin Films  

ScienceCinema (OSTI)

A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

None

2010-01-08T23:59:59.000Z

334

Initiated chemical vapor deposition of functional polyacrylic thin films  

E-Print Network [OSTI]

Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

Mao, Yu, 1975-

2005-01-01T23:59:59.000Z

335

Direct printing of lead zirconate titanate thin films  

E-Print Network [OSTI]

Thus far, use of lead zirconate titanate (PZT) in MEMS has been limited due to the lack of process compatibility with existing MEMS manufacturing techniques. Direct printing of thin films eliminates the need for photolithographic ...

Bathurst, Stephen, 1980-

2008-01-01T23:59:59.000Z

336

Peeling Back the Layers of Thin Film Structure and Chemistry  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

July 10, 2014 Bookmark and Share The layer-by-layer analysis of the concentration of strontium within a 40-angstrom thick (La, Sr)CoO thin film applied to a SiTiO3 substrate....

337

Thin diamond films provide new material for micro-machines |...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Thin diamond films provide new material for micro-machines By Jared Sagoff * July 31, 2014 Tweet EmailPrint ARGONNE, Ill. - Airbags, inkjet printers and video projectors may not...

338

Nanostructured thin films for solid oxide fuel cells  

E-Print Network [OSTI]

The goals of this work were to synthesize high performance perovskite based thin film solid oxide fuel cell (TF-SOFC) cathodes by pulsed laser deposition (PLD), to study the structural, electrical and electrochemical properties of these cathodes...

Yoon, Jongsik

2009-05-15T23:59:59.000Z

339

Monolithic integration of thin-film coolers with optoelectronic devices  

E-Print Network [OSTI]

Monolithic integration of thin-film coolers with optoelectronic devices Christopher La Barbara, California 93106-9560 Abstract. Active refrigeration of optoelectronic components through the use manuscript received June 30, 2000; accepted for publication June 30, 2000. 1 Introduction Optoelectronic

340

Enabling integration of vapor-deposited polymer thin films  

E-Print Network [OSTI]

Initiated Chemical Vapor Deposition (iCVD) is a versatile, one-step process for synthesizing conformal and functional polymer thin films on a variety of substrates. This thesis emphasizes the development of tools to further ...

Petruczok, Christy D. (Christy Danielle)

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Properties and sensor performance of zinc oxide thin films  

E-Print Network [OSTI]

Reactively sputtered ZnO thin film gas sensors were fabricated onto Si wafers. The atmosphere dependent electrical response of the ZnO micro arrays was examined. The effects of processing conditions on the properties and ...

Min, Yongki, 1965-

2003-01-01T23:59:59.000Z

342

Thin, Free-Standing Films For High Resolution Neutron Imaging.  

E-Print Network [OSTI]

??Thin, free-standing boro-phosphosilicate glass (BPSG) films were fabricated at PSU Nanofab to serve as prototype neutron converters for a proposed high resolution neutron imaging system (more)

Trivelpiece, Cory

2010-01-01T23:59:59.000Z

343

Magnetic Skyrmion Phase in MnSi Thin Films.  

E-Print Network [OSTI]

??Detailed magnetometry and polarized neutron reflectometry studies were conducted on MnSi thin films grown epitaxially on Si(111) substrates. It is demonstrated that with an in-plane (more)

Wilson, Murray

2013-01-01T23:59:59.000Z

344

Efficient light-trapping nanostructures in thin silicon solar cells  

E-Print Network [OSTI]

We examine light-trapping in thin crystalline silicon periodic nanostructures for solar cell applications. Using group theory, we show that light-trapping can be improved over a broad band when structural mirror symmetry ...

Han, Sang Eon

345

Templated dewetting of thin solid films  

E-Print Network [OSTI]

The dewetting of solid metal polycrystalline films to form metal nanoparticles occurs by the nucleation and growth of holes in the film. For typical films on flat substrates, this process is not well-controlled and results ...

Giermann, Amanda L. (Amanda Leah)

2009-01-01T23:59:59.000Z

346

Photo-Alignment Behavior of Mesoporous Silica Thin Films Synthesized on a Photo-Cross-Linkable Polymer Film  

Science Journals Connector (OSTI)

Photo-Alignment Behavior of Mesoporous Silica Thin Films Synthesized on a Photo-Cross-Linkable Polymer Film ... Photo-aligning and micropatterning techniques for mesochannels of a silica thin film using a photo-cross-linkable polymer film with a cinnamoyl group are proposed. ... We propose herein a new photo-aligning and micropatterning technique for mesochannels of a silica thin film using a photo-cross-linkable polymer film with a cinnamoyl group. ...

Haruhiko Fukumoto; Shusaku Nagano; Nobuhiro Kawatsuki; Takahiro Seki

2006-02-11T23:59:59.000Z

347

Understanding Thin Film Structure for the Rational Design of  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Understanding Thin Film Structure for the Rational Design of Understanding Thin Film Structure for the Rational Design of High-performance Organic Semiconductors for Plastic Electronics Organic semiconductors are attracting considerable research interest due to their potential applications in low-cost electronics such as organic light emitting diode (OLED) displays, RF identification tags (RFID), smart cards and electronic paper. The development of p-conjugated materials, which are composed of alternating single and double chemical bonds, are the foundation of these applications. In the past decade research in this field has progressed to the extent that desirable charge transport in the organic semiconductor film in organic thin film transistors (OTFT) can be achieved through molecular design by selective placement of electron-rich, electron-withdrawing, and aromatic groups in different parts of the molecule. Although the electronic properties are easily tuned by molecular design, the molecular packing within the thin film and the film microstructure have a significant influence on the OTFT performance. Despite this importance, this interrelationship between molecular structure, thin film molecular packing and charge transport are only poorly understood.

348

Geometric shape control of thin film ferroelectrics and resulting structures  

DOE Patents [OSTI]

A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

349

Author's personal copy Magnetotransport properties of thin CFe films  

E-Print Network [OSTI]

Author's personal copy Magnetotransport properties of thin C­Fe films J.C. Prestigiacomo a , K The magnetotransport properties of C­Fe films formed by e-beam vapor deposition onto glass substrates are presented, and metastable iron carbide CFe3 [1]. In practice, varying compositions of metastable phases can be trapped via

Adams, Philip W.

350

Applied Films Corporation | Open Energy Information  

Open Energy Info (EERE)

Name: Applied Films Corporation Place: Longmont, Colorado Zip: 80504 Sector: Services, Solar Product: Provider of thin film deposition equipment and services, particularly to...

351

Low-Cost, Lightweight Solar Concentrators - FY13 Q1 | Department...  

Broader source: Energy.gov (indexed) [DOE]

More Documents & Publications Low-Cost, Lightweight Solar Concentrators FY13 Q2 Low-Cost, Lightweight Solar Concentrator Low-Cost Light Weigh Thin Film Solar Concentrators...

352

Investigation of CdS Nanowires and Planar Films for Enhanced Performance as Window Layers in CdS-CdTe Solar Cell Devices.  

E-Print Network [OSTI]

??Cadmium sulfide (CdS) and cadmium telluride (CdTe) are two leading semiconductor materials used in the fabrication of thin film solar cells of relatively high power (more)

Chen, Jianhao

2013-01-01T23:59:59.000Z

353

Potential of Thin Films for use in Charged Particle Tracking Detectors  

E-Print Network [OSTI]

Thin Film technology has widespread applications in everyday electronics, notably Liquid Crystal Display screens, solar cells, and organic light emitting diodes. We explore the potential of this technology as charged particle radiation tracking detectors for use in High Energy Physics experiments such as those at the Large Hadron Collider or the Relativistic Heavy Ion Collider. Through modern fabrication techniques, a host of semiconductor materials are available to construct thin, flexible detectors with integrated electronics with pixel sizes on the order of a few microns. We review the material properties of promising candidates, discuss the potential benefits and challenges associated with this technology, and review previously demonstrated applicability as a neutron detector.

Metcalfe, J; Murphy, J; Quevedo, M; Smith, L; Alvarado, J; Gnade, B; Takai, H

2014-01-01T23:59:59.000Z

354

Potential of Thin Films for use in Charged Particle Tracking Detectors  

E-Print Network [OSTI]

Thin Film technology has widespread applications in everyday electronics, notably Liquid Crystal Display screens, solar cells, and organic light emitting diodes. We explore the potential of this technology as charged particle radiation tracking detectors for use in High Energy Physics experiments such as those at the Large Hadron Collider or the Relativistic Heavy Ion Collider. Through modern fabrication techniques, a host of semiconductor materials are available to construct thin, flexible detectors with integrated electronics with pixel sizes on the order of a few microns. We review the material properties of promising candidates, discuss the potential benefits and challenges associated with this technology, and review previously demonstrated applicability as a neutron detector.

J. Metcalfe; I. Mejia; J. Murphy; M. Quevedo; L. Smith; J. Alvarado; B. Gnade; H. Takai

2014-11-06T23:59:59.000Z

355

Formation and ferromagnetic properties of FeSi thin films  

SciTech Connect (OSTI)

In this work, the growth and ferromagnetic properties of {epsilon}-FeSi thin film on Si(100) substrate prepared by molecular beam epitaxy are reported. The inter-diffusion of Fe layer on Si(100) substrate at 600 Degree-Sign C results in polycrystalline {epsilon}-FeSi layer. The determined activation energy was 0.044 eV. The modified magnetism from paramagnetic in bulk to ferromagnetic states in {epsilon}-FeSi thin films was observed. The saturated magnetization and coercive field of {epsilon}-FeSi film are 4.6 emu/cm{sup 3} and 29 Oe at 300 K, respectively.

Shin, Yooleemi; Anh Tuan, Duong; Hwang, Younghun; Viet Cuong, Tran; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of)

2013-05-07T23:59:59.000Z

356

Shape variation of micelles in polymer thin films  

SciTech Connect (OSTI)

The equilibrium properties of block copolymer micelles confined in polymer thin films are investigated using self-consistent field theory. The theory is based on a model system consisting of AB diblock copolymers and A homopolymers. Two different methods, based on the radius of gyration tensor and the spherical harmonics expansion, are used to characterize the micellar shape. The results reveal that the morphology of micelles in thin films depends on the thickness of the thin films and the selectivity of the confining surfaces. For spherical (cylindrical) micelles, the spherical (cylindrical) symmetry is broken by the presence of the one-dimensional confinement, whereas the top-down symmetry is broken by the selectivity of the confining surfaces. Morphological transitions from spherical or cylindrical micelles to cylinders or lamella are predicted when the film thickness approaches the micellar size.

Zhou, Jiajia, E-mail: zhou@uni-mainz.de; Shi, An-Chang, E-mail: shi@mcmaste.ca [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)] [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)

2014-01-14T23:59:59.000Z

357

Thin films for solar control applications  

Science Journals Connector (OSTI)

...is resulting in the extensive use of electricity in order to maintain such systems...1. Introduction The worlds energy consumption is continuously increasing and this...cent of the worlds total annual energy consumption owing to the excessive use of lighting...

2010-01-01T23:59:59.000Z

358

Thin-film transistors based on p-type Cu{sub 2}O thin films produced at room temperature  

SciTech Connect (OSTI)

Copper oxide (Cu{sub 2}O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu{sub 2}O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm{sup 2}/V s and an on/off ratio of 2x10{sup 2}.

Fortunato, Elvira; Figueiredo, Vitor; Barquinha, Pedro; Elamurugu, Elangovan; Goncalves, Goncalo; Martins, Rodrigo [Departamento de Ciencia dos Materiais, CENIMAT/I3N, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, 2829-516 Caparica (Portugal); Barros, Raquel [Departamento de Ciencia dos Materiais, CENIMAT/I3N, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, 2829-516 Caparica (Portugal); Materiais Avancados, INNOVNANO, SA, 7600-095 Aljustrel (Portugal); Park, Sang-Hee Ko; Hwang, Chi-Sun [Electronic and Telecommunications Research Institute, 138 Gajeongro, Yuseong-gu, Daejeon, 305-700 (Korea, Republic of)

2010-05-10T23:59:59.000Z

359

CRYOGENIC CATHODOLUMINESCENCE FROM CuxAg1-xInSe2 THIN FILMS Angel R. Aquino  

E-Print Network [OSTI]

CRYOGENIC CATHODOLUMINESCENCE FROM CuxAg1-xInSe2 THIN FILMS Angel R. Aquino 1 , Angus A. Rockett 1 deposited by a hybrid magnetron sputtering/evaporation process over a range of x values. Cryogenic for solar cell applications. Here we present results of the first cryogenic CL experiments with spectral

Rockett, Angus

360

Critical confinement and elastic instability in thin solid films  

E-Print Network [OSTI]

When a flexible plate is peeled off a thin and soft elastic film bonded to a rigid support, uniformly spaced fingering patterns develop along their line of contact. While, the wavelength of these patterns depends only on the thickness of the film, their amplitude varies with all material and geometric properties of the film and that of the adhering plate. Here we have analyzed this instability by the regular perturbation technique to obtain the excess deformations of the film over and above the base quantities. Furthermore, by calculating the excess energy of the system we have shown that these excess deformations, associated with the instability, occur for films which are critically confined. We have presented two different experiments for controlling the degree of confinement: by pre-stretching the film and by adjusting the contact width between the film and the plate.

Animangsu Ghatak; Manoj K. Chaudhury

2007-01-11T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Photoresponse of Tb{sup 3+} doped phosphosilicate thin films  

SciTech Connect (OSTI)

Phosphosilicate ceramic was doped with Tb{sup 3+} using sol-gel technique to prepare thin films. The films were prepared by spin coating the phosphosilicate sols on SiO{sub x}/indium-tin-oxide/glass substrates. The photocurrent of the films at 355 nm laser excitation was observed. The photoresponse as a function of applied field and laser energy was linear and showed no sign of saturation. The films exhibited very stable photoresponse under a very high number of laser shots.

Lee, B.L.; Cao, Z. [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering] [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering; Sisk, W.N.; Hudak, J. [Univ. of North Carolina, Charlotte, NC (United States)] [Univ. of North Carolina, Charlotte, NC (United States); Samuels, W.D.; Exarhos, G.J. [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science] [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science

1997-09-01T23:59:59.000Z

362

Solar Energy Materials & Solar Cells 58 (1999) 199}208 The behaviour of Na implanted into Mo thin "lms  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 58 (1999) 199}208 The behaviour of Na implanted into Mo thin, As ngstro( m Solar Center, P.O. Box 534, SE-751 21 Uppsala, Sweden Department of Materials Science Mo thin "lms used as back contacts for Cu(In,Ga)Se solar cells. The samples were analysed

Rockett, Angus

363

Building-integrated solar energy devices based on wavelength selective films.  

E-Print Network [OSTI]

??A potentially attractive option for building integrated solar is to employ hybrid solar collectors which serve dual purposes, combining solar thermal technology with either thin (more)

Ulavi, Tejas U.

2013-01-01T23:59:59.000Z

364

Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells  

Science Journals Connector (OSTI)

Polycrystalline-thin-film thermophotovoltaic (TPV) cells have excellent potential for reducing the cost of TPV generators so as to address the hitherto inaccessible and highly competitive markets such as self-powered gas-fired residential warm air furnaces and energy-efficient electric cars etc. Recent progress in polycrystalline-thin-film solar cells have made it possible to satisfy the diffusion length and intrinsic junction rectification criteria for TPV cells operating at high fluences. Continuous ranges of direct bandgaps of the ternary and pseudoternary compounds such as Hg 1?x Cd x Te Pb 1?x Cd x Te Hg 1?x Zn x Te and Pb 1?x Zn x S cover the region of interest of 0.500.75 eV for efficient TPV conversion. Other ternary and pseudoternary compounds which show direct bandgaps in most of or all of the 0.500.75 eV range are Pb 1?x Zn x Te Sn 1?x Cd 2x Te 2 Pb 1?x Cd x Se Pb 1?x Zn x Se and Pb 1?x Cd x S . Hg 1?x Cd x Te (with x?0.21 ) has been studied extensively for infrared detectors. PbTe and Pb 1?x Sn x Te have also been studied for infrared detectors. Not much work has been carried out on Hg 1?x Zn x Te thin films. Hg 1?x Cd x Te and Pb 1?x Cd x Te alloys cover a wide range of cut-off wavelengths from the far infrared to the near visible. Acceptors and donors are introduced in these materials by excess non-metal (Te) and excess metal (Hg and Pb) respectively. Extrinsic acceptor impurities are Cu Au and As while and In and Al are donor impurities. Hg 1?x Cd x Te thin films have been deposited by isothermal vapor-phase epitaxy (VPE) liquid phase epitaxy (LPE) hot-wall metalorganic chemical vapor deposition (MOCVD) electrodeposition sputtering molecular beam epitaxy (MBE) laser-assisted evaporation and vacuum evaporation with or without hot-wall enclosure. The challenge in the preparation of Hg 1?x Cd x Te is to provide excess mercury incidence rate to optimize the deposition parameters for enhanced mercury incorporation and to achieve the requisite stoichiometry grain size and doping. MBE and MOCVD techniques have paved the way for obtaining epitaxial Hg 1?x Cd x Te thin films at substrate temperatures of ?180? C with the desired crystalline perfection stoichiometry and doping without the necessity of further annealing for improving either the crystalline quality or dopant activity. Retaining larger mercury proportions during annealing would require heated enclosures as in isothermal VPE hot-wall technique vacuum evaporation hot-wall MOCVD or close-space sublimation. Pb 1?x Cd x Te thin films can be prepared by magnetron sputtering from cooled Pb 1?x Cd x Te targets on heated substrates. Hot-wall technique is suitable for the deposition of Pb 1?x Cd x Te thin films. Hg 1?x Cd x Te and Pb 1?x Cd x Te TPV cells will benefit from the substantial work on CdTe thin film solar cells. The paper reviews work on thin films of ternary and pseudoternary compounds of interest for TPV conversion and methods of their preparation with a view to choosing the appropriate materials and fabrication techniques for polycrystalline-thin-film TPV cells.

Neelkanth G. Dhere

1997-01-01T23:59:59.000Z

365

Guided Self-Assembly of Gold Thin Films  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

366

Guided Self-Assembly of Gold Thin Films  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

367

Guided Self-Assembly of Gold Thin Films  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

368

Guided Self-Assembly of Gold Thin Films  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

369

Biocompatibility of Pristine Graphene Monolayers, Nanosheets and Thin Films  

E-Print Network [OSTI]

There is an increasing interest to develop nanoscale biocompatible graphene structures due to their desirable physicochemical properties, unlimited application opportunities and scalable production. Here we report the preparation, characterization and biocompatibility assessment of novel graphene flakes and their enabled thin films suitable for a wide range of biomedical and electronic applications. Graphene flakes were synthesized by a chemical vapour deposition method or a liquid-phase exfoliation procedure and then thin films were prepared by transferring graphene onto glass coverslips. Raman spectroscopy and transmission electron microscopy confirmed a predominantly monolayer and a high crystalline quality formation of graphene. The biocompatibility assessment of graphene thin films and graphene flakes was performed using cultured human lung epithelial cell line A549 employing a multimodal approach incorporating automated imaging, high content screening, real-time impedance sensing in combination with bio...

Conroy, Jennifer; Smith, Ronan J; Rezvani, Ehsan; Duesberg, Georg S; Coleman, Jonathan N; Volkov, Yuri

2014-01-01T23:59:59.000Z

370

Electrochromism in copper oxide thin films  

E-Print Network [OSTI]

by a variety of routes, and electrochromic behavior has beenof Cu x O films, electrochromic devices based onbeen investigated. Unlike electrochromic devices based on

Richardson, Thomas J.; Slack, Jonathan L.; Rubin, Michael D.

2000-01-01T23:59:59.000Z

371

Surface acoustic wave interaction with thin magnetic films  

Science Journals Connector (OSTI)

It has been found that surface acoustic waves(SAW) exhibit a very large interaction with appropriately prepared thin magnetic films through the magnetoelasticeffect. For a 600 90Ni 10Fe thin film the interaction can produce changes in attenuation of 30 dB/cm at 700 MHz by changing from 2 to 12 G a magnetic field applied parallel to the film plane and perpendicular to the SAW.Measurements of the frequency dependence of this large effect yield values for the Gilbert damping constant and the anisotropy field. This interaction has been studied in the series of xNi (1 ? x)Fe alloy films. For x > 80 wt % the magnetoelastic constant ? is negative. It is positive for x Science Foundation under Grant No. ESC 8519695.

Moises Levy; Roy Wiegert

1986-01-01T23:59:59.000Z

372

Thin-film tin oxide??ethanol sensor  

Science Journals Connector (OSTI)

Tin Oxide (SnO2) thin films grown on glass substrate at 648 K using direct evaporation method with two gold pads deposited on the top for electrical contacts were exposed to ethanol vapours (200-1000 ppm). The operating temperature of the sensor was optimised. The sensitivity variation of films having different thicknesses was studied. To improve the sensitivity and selectivity further, a thin layer of metal oxide was deposited on the sensor surface to work as a catalytic layer and its effect on the performance of the sensor was studied. The response and recovery times of the sensor were determined.

H.J. Pandya

2009-01-01T23:59:59.000Z

373

Perovskite phase thin films and method of making  

DOE Patents [OSTI]

The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

Boyle, Timothy J. (Albuquerque, NM); Rodriguez, Mark A. (Albuquerque, NM)

2000-01-01T23:59:59.000Z

374

Two-color Laser Desorption of Nanostructured MgO Thin Films....  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Two-color Laser Desorption of Nanostructured MgO Thin Films. Two-color Laser Desorption of Nanostructured MgO Thin Films. Abstract: Neutral magnesium atom emission from...

375

Initiated chemical vapor deposition of polymeric thin films : mechanism and applications  

E-Print Network [OSTI]

Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness ...

Chan, Kelvin, Ph. D. Massachusetts Institute of Technology

2005-01-01T23:59:59.000Z

376

Anisotropic dewetting in ultra-thin single-crystal silicon-on-insulator films  

E-Print Network [OSTI]

The single crystal silicon-on-insulator thin film materials system represents both an ideal model system for the study of anisotropic thin film dewetting as well as a technologically important system for the development ...

Danielson, David T. (David Thomas)

2008-01-01T23:59:59.000Z

377

Quench Properties and Fault Current Limiters of YBCO Thin-Film Superconductors  

Science Journals Connector (OSTI)

We measured the current dependence of quench propagation velocities in strip-shaped YBCO thin films and the current-limiting properties of fault current limiters consisting of a YBCO thin film and ... -300 cm/sec...

Hiroshi Kubota; Yuki Kudo; Mutsuki Yamazaki

1998-01-01T23:59:59.000Z

378

Influence of samaria doping on the resistance of ceria thin films...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

doping on the resistance of ceria thin films and its implications to the planar oxygen sensing devices. Influence of samaria doping on the resistance of ceria thin films and...

379

Growth of Epitaxial Thin Pd(111) Films on Pt(111) and Oxygen...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Growth of Epitaxial Thin Pd(111) Films on Pt(111) and Oxygen-Terminated FeO(111) Surfaces . Growth of Epitaxial Thin Pd(111) Films on Pt(111) and Oxygen-Terminated FeO(111)...

380

Preparation of a semiconductor thin film  

DOE Patents [OSTI]

A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, Martin (TuBingen, DE); Schulz, Douglas L. (Denver, CO); Curtis, Calvin J. (Lakewood, CO); Ginley, David S. (Evergreen, CO)

1998-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Preparation of a semiconductor thin film  

DOE Patents [OSTI]

A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Ginley, D.S.

1998-01-27T23:59:59.000Z

382

Method for producing high quality thin layer films on substrates  

DOE Patents [OSTI]

A method for producing high quality, thin layer films of inorganic compounds upon the surface of a substrate is disclosed. The method involves condensing a mixture of preselected molecular precursors on the surface of a substrate and subsequently inducing the formation of reactive species using high energy photon or charged particle irradiation. The reactive species react with one another to produce a film of the desired compound upon the surface of the substrate.

Strongin, Myron (Center Moriches, NY); Ruckman, Mark (Middle Island, NY); Strongin, Daniel (Port Jefferson, NY)

1994-01-01T23:59:59.000Z

383

Method for producing high quality thin layer films on substrates  

DOE Patents [OSTI]

A method for producing high quality, thin layer films of inorganic compounds upon the surface of a substrate is disclosed. The method involves condensing a mixture of preselected molecular precursors on the surface of a substrate and subsequently inducing the formation of reactive species using high energy photon or charged particle irradiation. The reactive species react with one another to produce a film of the desired compound upon the surface of the substrate. 4 figures.

Strongin, M.; Ruckman, M.; Strongin, D.

1994-04-26T23:59:59.000Z

384

Fabrication and testing of thermoelectric thin film devices  

SciTech Connect (OSTI)

Two thin-film thermoelectric devices are experimentally demonstrated. The relevant thermal loads on the cold junction of these devices are determined. The analytical form of the equation that describes the thermal loading of the device enables one to model the performance based on the independently measured electronic properties of the films forming the devices. This model elucidates which parameters determine device performance, and how they can be used to maximize performance.

Wagner, A.V.; Foreman, R.J.; Summers, L.J.; Barbee, T.W. Jr.; Farmer, J.C. [Lawrence Livermore National Lab., CA (United States). Chemistry and Materials Science Dept.

1996-03-01T23:59:59.000Z

385

Nonequilibrium behavior of thin polymer films  

Science Journals Connector (OSTI)

The rheological behavior of 100-nm-thick polystyrene films cast from various solvents was examined using an electric field to weakly perturb the free surface of the polymer melt. The effective viscosity and residual stresses of the as-spun films are seen to strongly depend on the properties of the casting solvent and the solvent quality. Both effects are explained in terms of the coil dimension at the solvent-polymer composition at which the film vitrifies. The more compact chains in a near-?-solvent are less entangled and less deformed when quenched to the dry melt compared to the more swollen chains in an athermal solution. Despite chain conformations that are further from equilibrium for the ?-solvent cast chains, these films have reduced stored stresses compared to the chains cast in films from athermal solvents. A more detailed analysis of the data suggests that the formation of a surface-near region with more strongly deformed chains during spin coating. Since thermal equilibration of spin-cast high-molecular-weight films is unpractical, solvent vapor annealing was used to equilibrate films on timescale of a few hours.

Katherine R. Thomas; Alexis Chenneviere; Gnter Reiter; Ullrich Steiner

2011-02-28T23:59:59.000Z

386

China Singyes Solar Technologies Holdings Ltd formerly known...  

Open Energy Info (EERE)

with Solar Thin Films to build solar module capacity in China for the domestic BIPV market. Coordinates: 22.277, 113.556808 Show Map Loading map......

387

B{sub 4}C thin films for neutron detection  

SciTech Connect (OSTI)

Due to the very limited availability of {sup 3}He, new kinds of neutron detectors, not based on {sup 3}He, are urgently needed. Here, we present a method to produce thin films of {sup 10}B{sub 4}C, with maximized detection efficiency, intended to be part of a new generation of large area neutron detectors. B{sub 4}C thin films have been deposited onto Al-blade and Si wafer substrates by dc magnetron sputtering from {sup nat}B{sub 4}C and {sup 10}B{sub 4}C targets in an Ar discharge, using an industrial deposition system. The films were characterized with scanning electron microscopy, elastic recoil detection analysis, x-ray reflectivity, and neutron radiography. We show that the film-substrate adhesion and film purity are improved by increased substrate temperature and deposition rate. A deposition rate of 3.8 A/s and substrate temperature of 400 deg. C result in films with a density close to bulk values and good adhesion to film thickness above 3 {mu}m. Boron-10 contents of almost 80 at. % are obtained in 6.3 m{sup 2} of 1 {mu}m thick {sup 10}B{sub 4}C thin films coated on Al-blades. Initial neutron absorption measurements agree with Monte Carlo simulations and show that the layer thickness, number of layers, neutron wavelength, and amount of impurities are determining factors. The study also shows the importance of having uniform layer thicknesses over large areas, which for a full-scale detector could be in total {approx}1000 m{sup 2} of two-side coated Al-blades with {approx}1 {mu}m thick {sup 10}B{sub 4}C films.

Hoeglund, Carina [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linkoeping University, SE-581 83 Linkoeping (Sweden); Birch, Jens; Jensen, Jens; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linkoeping University, SE-581 83 Linkoeping (Sweden); Andersen, Ken; Hall-Wilton, Richard [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Bigault, Thierry; Buffet, Jean-Claude; Correa, Jonathan; Esch, Patrick van; Guerard, Bruno; Piscitelli, Francesco [Institute Laue Langevin, Rue Jules Horowitz, FR-380 00 Grenoble (France); Khaplanov, Anton [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Institute Laue Langevin, Rue Jules Horowitz, FR-380 00 Grenoble (France); Vettier, Christian [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); European Synchrotron Radiation Facility, BP 220, FR-380 43 Grenoble Cedex 9 (France); Vollenberg, Wilhelmus [Vacuum, Surfaces and Coatings Group (TE/VSC), CERN, CH-1211 Geneva 23 (Switzerland)

2012-05-15T23:59:59.000Z

388

B4C thin films for neutron detection  

Science Journals Connector (OSTI)

Due to the very limited availability of 3He new kinds of neutron detectors not based on 3He are urgently needed. Here we present a method to produce thin films of 10B4C with maximized detection efficiency intended to be part of a new generation of large area neutron detectors. B4C thin films have been deposited onto Al-blade and Si wafer substrates by dc magnetron sputtering from natB4C and 10B4C targets in an Ar discharge using an industrial deposition system. The films were characterized with scanning electron microscopy elastic recoil detection analysis x-ray reflectivity and neutron radiography. We show that the film-substrate adhesion and film purity are improved by increased substrate temperature and deposition rate. A deposition rate of 3.8?/s and substrate temperature of 400?C result in films with a density close to bulk values and good adhesion to film thickness above 3 ?m. Boron-10 contents of almost 80 at. % are obtained in 6.3 m2 of 1 ?m thick 10B4C thin films coated on Al-blades. Initial neutron absorption measurements agree with Monte Carlo simulations and show that the layer thickness number of layers neutron wavelength and amount of impurities are determining factors. The study also shows the importance of having uniform layer thicknesses over large areas which for a full-scale detector could be in total ?1000 m2 of two-side coated Al-blades with ?1 ?m thick 10B4C films.

Carina Hglund; Jens Birch; Ken Andersen; Thierry Bigault; Jean-Claude Buffet; Jonathan Correa; Patrick van Esch; Bruno Guerard; Richard Hall-Wilton; Jens Jensen; Anton Khaplanov; Francesco Piscitelli; Christian Vettier; Wilhelmus Vollenberg; Lars Hultman

2012-01-01T23:59:59.000Z

389

Lessons Learned from the Photovoltaic Manufacturing Technology/PV Manufacturing R&D and Thin Film PV Partnership Projects  

SciTech Connect (OSTI)

As the U.S. Department of Energy's (DOE's) Solar Energy Technologies Program initiates new cost-shared solar energy R&D under the Solar America Initiative (SAI), it is useful to analyze the experience gained from cost-shared R&D projects that have been funded through the program to date. This report summarizes lessons learned from two DOE-sponsored photovoltaic (PV) projects: the Photovoltaic Manufacturing Technology/PV Manufacturing R&D (PVMaT/PVMR&D) project and the Thin-Film PV Partnership project. During the past 10-15 years, these two projects have invested roughly $330 million of government resources in cost-shared R&D and leveraged another $190 million in private-sector PV R&D investments. Following a description of key findings and brief descriptions of the PVMaT/PVMR&D and Thin-Film PV Partnership projects, this report presents lessons learned from the projects.

Margolis, R.; Mitchell, R.; Zweibel, K.

2006-09-01T23:59:59.000Z

390

An integrated thin-film thermo-optic waveguide beam deflector Suning Tang,a)  

E-Print Network [OSTI]

An integrated thin-film thermo-optic waveguide beam deflector Suning Tang,a) Bulang Li, and Xinghua for publication 16 February 2000 We have demonstrated the operation of a thin-film thermo-optical beam deflector in a three-layer optical planar waveguide. The fabricated waveguide beam deflector consists of a thin-film Si

Chen, Ray

391

Oriented niobate ferroelectric thin films for electrical and optical devices  

DOE Patents [OSTI]

Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or cyrstalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

Wessels, Bruce W. (Wilmette, IL); Nystrom, Michael J. (Chicago, IL)

2001-01-01T23:59:59.000Z

392

Control of magnetization reversal in oriented strontium ferrite thin films  

SciTech Connect (OSTI)

Oriented Strontium Ferrite films with the c axis orientation were deposited with varying oxygen partial pressure on Al{sub 2}O{sub 3}(0001) substrate using Pulsed Laser Deposition technique. The angle dependent magnetic hysteresis, remanent coercivity, and temperature dependent coercivity had been employed to understand the magnetization reversal of these films. It was found that the Strontium Ferrite thin film grown at lower (higher) oxygen partial pressure shows Stoner-Wohlfarth type (Kondorsky like) reversal. The relative importance of pinning and nucleation processes during magnetization reversal is used to explain the type of the magnetization reversal with different oxygen partial pressure during growth.

Roy, Debangsu, E-mail: debangsu@physics.iisc.ernet.in; Anil Kumar, P. S. [Department of Physics, Indian Institute of Science, Bangalore 560012 (India)

2014-02-21T23:59:59.000Z

393

Cost Effectiveness for Solar Control Film for Residential Applications  

E-Print Network [OSTI]

and first week of October. Data for 16th September, without the solar control film and for 1st October, with solar control film are analyzed. Incidental and transmitted global solar radiations on the east and west windows for these two days are shown... for 16th Sep/ Ii for 1st Oct)* It for 1st Oct (2) The hourly average values of the incident radiation, the transmitted radiation without the film and the transmitted readjusted radiation for the east and the west glazing are shown in Figs 3 and 4...

Al-Taqi, H. H.; Maheshwari, G. P.; Alasseri, R.

2010-01-01T23:59:59.000Z

394

Organic Thin Film Magnet of Nickel-Tetracyanoethylene  

SciTech Connect (OSTI)

Hybrid organic-inorganic materials consisting of a transition metal and an organic compound, TCNE form a unique class of organic magnets denoted by M(TCNE){sub x}(where M = transition metals, and TCNE = tetracyanoethylene). The organic thin film magnet of nickel-tetracyanoethylene, Ni(TCNE){sub x} is deposited on sputtered clean gold substrate using the physical vapor deposition (PVD) technique under ultra high vacuum (UHV) conditions at room temperature. X-ray photoelectron spectroscopy (XPS) has been used to investigate chemical and electronic properties of Ni(TCNE){sub x} film. XPS derived film thickness and stoichiometry are found to be 6 nm and 1:2 ratio between Ni and TCNE resulting Ni(TCNE){sub 2} film, respectively. In addition, XPS results do not show any signature of the presence of pure metallic Ni or Ni-clustering in the Ni(TCNE){sub x} film.

Bhatt, Pramod; Yusuf, S. M. [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

2011-07-15T23:59:59.000Z

395

Stripe Domain-Structures in a Thin Ferromagnetic Film  

E-Print Network [OSTI]

We present a theory of the stripe domain structure in a thin ferromagnetic film with single-ion easy-axis magnetic anisotropy and long-range dipole interactions, for a wide range of temperatures and applied magnetic field. The domains exist...

KASHUBA, AB; Pokrovsky, Valery L.

1993-01-01T23:59:59.000Z

396

Method of preparing thin film polymeric gel electrolytes  

DOE Patents [OSTI]

Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

Derzon, Dora K. (Albuquerque, NM); Arnold, Jr., Charles (Albuquerque, NM)

1997-01-01T23:59:59.000Z

397

Preparation and characterization of TL-based superconducting thin films  

E-Print Network [OSTI]

A simple method for growth of Tl-based superconducting thin films is described. In this method, the precursor was prepared in a vacuum chamber by deposition of Ba, Ca and Cu metals or a Ba-Ca alloy and Cu metal. The precursor was then oxidized...

Wang, Pingshu

2012-06-07T23:59:59.000Z

398

LIQUID PHASE DEPOSITION OF ELECTROCHROMIC THIN FILMS T. J. Richardson and M. D. Rubin  

E-Print Network [OSTI]

1 LIQUID PHASE DEPOSITION OF ELECTROCHROMIC THIN FILMS T. J. Richardson and M. D. Rubin electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared, and readily scalable to larger substrates. Keywords: liquid phase deposition; electrochromic films; thin film

399

Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010  

SciTech Connect (OSTI)

In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

Kumar, A.; Ravi, K. V.

2011-06-01T23:59:59.000Z

400

Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor  

E-Print Network [OSTI]

The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

Nominanda, Helinda

2012-06-07T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Photoconductivity in reactively evaporated copper indium selenide thin films  

SciTech Connect (OSTI)

Copper indium selenide thin films of composition CuInSe{sub 2} with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 5 K and pressure of 10{sup ?5} mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe{sub 2} films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (?) of 10{sup 6} cm{sup ?1} at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe{sub 2} thin films indicate its suitability in photovoltaic applications.

Urmila, K. S., E-mail: urmilaks7@gmail.com; Asokan, T. Namitha, E-mail: urmilaks7@gmail.com; Pradeep, B., E-mail: urmilaks7@gmail.com [Solid State Physics Laboratory, Cochin University of Science and Technology, Kochi, Kerala (India); Jacob, Rajani; Philip, Rachel Reena [Thin Film Research Laboratory, Union Christian College, Aluva, Kerala (India)

2014-01-28T23:59:59.000Z

402

Structure-stress-resistivity relationship in WTi alloy ultra-thin and thin films prepared by magnetron sputtering  

Science Journals Connector (OSTI)

WTi thin films were prepared from an alloyed target (W:Ti ? 70:30?at. %) by magnetron sputtering. Body-centered cubic W x T i 1 ? x solid solutions with a { 110 } fiber texture and columnar grains have been produced with 0.75 WTi thin films is about 60 ? 200 ? ? ? ? cm depending on the film thickness and microstructure (sputtering conditions). For both ultra-thin (9.5?nm) and thin (180?nm) films a stress transition from compressive to tensile is observed as the working pressure increases. The process-structure-property relations of the WTi ultra-thin and thin films are discussed in relation with the state of the art.

P.-O. Renault

2013-01-01T23:59:59.000Z

403

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

Ciszek, Theodore F. (Evergreen, CO)

1995-01-01T23:59:59.000Z

404

Abstract--In this paper, the propagation characteristics of an enhanced-thickness magnetic nanoparticle thin film are  

E-Print Network [OSTI]

nanoparticle thin film are investigated on high resistivity silicon substrate (10,000 ohm-cm) for the first time up to 60 GHz. Contrary to other thin films, this nanoparticle thin film can achieve a thickness up. Index Terms-- Magnetic thin film, Nanoparticle, Coplanar waveguide, high-permeability materials, FGC I

Tentzeris, Manos

405

Method and making group IIB metal - telluride films and solar cells  

DOE Patents [OSTI]

A technique is disclosed forming thin films (13) of group IIB metal-telluride, such as Cd.sub.x Zn.sub.1-x Te (0.ltoreq.x.ltoreq.1), on a substrate (10) which comprises depositing Te (18) and at least one of the elements (19) of Cd, Zn, and Hg onto a substrate and then heating the elements to form the telluride. A technique is also provided for doping this material by chemically forming a thin layer of a dopant on the surface of the unreacted elements and then heating the elements along with the layer of dopant. A method is disclosed of fabricating a thin film photovoltaic cell which comprises depositing Te and at least one of the elements of Cd, Zn, and Hg onto a substrate which contains on its surface a semiconductor film (12) and then heating the elements in the presence of a halide of the Group IIB metals, causing the formation of solar cell grade Group IIB metal-telluride film and also causing the formation of a rectifying junction, in situ, between the semiconductor film on the substrate and the Group IIB metal-telluride layer which has been formed.

Basol, Bulent M. (Redondo Beach, CA); Kapur, Vijay K. (Northridge, CA)

1990-08-21T23:59:59.000Z

406

Thin-film aerogel thermal conductivity measurements via 3?  

Science Journals Connector (OSTI)

The limiting constraint in a growing number of nano systems is the inability to thermally tune devices. Silica aerogel is widely accepted as the best solid thermal insulator in existence and offers a promising solution for microelectronic systems needing superior thermal isolation. In this study, thin-film silica aerogel films varying in thickness from 250 to 1280nm were deposited on SiO2 substrates under a variety of deposition conditions. These samples were then thermally characterized using the 3? technique. Deposition processes for depositing the 3? testing mask to the sample were optimized and it was demonstrated that thin-film aerogel can maintain its structure in common fabrication processes for microelectromechanical systems. Results indicate that thin-film silica aerogel can maintain the unique, ultra-low thermal conductivity commonly observed in bulk aerogel, with a directly measured thermal conductivity as low as 0.024W/m-K at temperature of 295K and pressure between 0.1 and 1Pa.

M.L. Bauer; C.M. Bauer; M.C. Fish; R.E. Matthews; G.T. Garner; A.W. Litchenberger; P.M. Norris

2011-01-01T23:59:59.000Z

407

Quantum states of neutrons in magnetic thin films  

SciTech Connect (OSTI)

We have studied experimentally and theoretically the interaction of polarized neutrons with magnetic thin films and magnetic multilayers. In particular, we have analyzed the behavior of the critical edges for total external reflection in both cases. For a single film we have observed experimentally and theoretically a simple behavior: the critical edges remain fixed and the intensity varies according to the angle between the polarization axis and the magnetization vector inside the film. For the multilayer case we find that the critical edges for spin-up and spin-down polarized neutrons move toward each other as a function of the angle between the magnetization vectors in adjacent ferromagnetic films. Although the results for multilayers and single thick layers appear to be different, in fact, the same spinor method explains both results. An interpretation of the critical edges behavior for the multilyers as a superposition of ferromagnetic and antifferomagnetic states is given.

Radu, F.; Zabel, H. [Department of Physics, Ruhr-University Bochum, D- 44780 Bochum (Germany); Leiner, V. [Institut fuer Werkstoffforschung WFN, GKSS Forschungszentrum GmbH, 21502 Geesthacht (Germany); Wolff, M. [Department of Physics, Ruhr-University Bochum, D- 44780 Bochum (Germany); Institut Laue-Langevin, F-38042 Grenoble Cedex 9 (France); Ignatovich, V.K. [Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, 141980, Dubna Moscow Region (Russian Federation)

2005-06-01T23:59:59.000Z

408

Thermal Conductivity in Nanocrystalline Ceria Thin Films  

SciTech Connect (OSTI)

The thermal conductivity of nanocrystalline ceria films grown by unbalanced magnetron sputtering is determined as a function of temperature using laser-based modulated thermoreflectance. The films exhibit significantly reduced conductivity compared with stoichiometric bulk CeO2. A variety of microstructure imaging techniques including X-ray diffraction, scanning and transmission electron microscopy, X-ray photoelectron analysis, and electron energy loss spectroscopy indicate that the thermal conductivity is influenced by grain boundaries, dislocations, and oxygen vacancies. The temperature dependence of the thermal conductivity is analyzed using an analytical solution of the Boltzmann transport equation. The conclusion of this study is that oxygen vacancies pose a smaller impediment to thermal transport when they segregate along grain boundaries.

Marat Khafizov; In-Wook Park; Aleksandr Chernatynskiy; Lingfeng He; Jianliang Lin; John J. Moore; David Swank; Thomas Lillo; Simon R. Phillpot; Anter El-Azab; David H. Hurley

2014-02-01T23:59:59.000Z

409

AxunTek Solar Energy | Open Energy Information  

Open Energy Info (EERE)

AxunTek Solar Energy Jump to: navigation, search Name: AxunTek Solar Energy Place: Taiwan Sector: Solar Product: Taiwan-based CIGS thin film solar cell producer. References:...

410

Loan Guarantees for Three California PV Solar Plants Expected...  

Broader source: Energy.gov (indexed) [DOE]

Abound Solar -- who are about to get more than 1,000 new colleagues -- make a thin-film solar panel. | Photo courtesy of Abound Solar Former Chrysler Plant Changes Gears to Solar...

411

Solar Firms Scale Back  

Science Journals Connector (OSTI)

Solar Firms Scale Back ... First Solar, an Arizona-based thin-film photovoltaics firm, said last week that it will restructure its operations to reduce capacity and shift production to more efficient facilities. ...

MELODY BOMGARDNER

2012-04-23T23:59:59.000Z

412

Engineering Thin-Film Oxide Interfaces | Advanced Photon Source  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Novel Materials Become Multifunctional at the Ultimate Quantum Limit Novel Materials Become Multifunctional at the Ultimate Quantum Limit Outsmarting Flu Viruses How Lead-Free Solder (Mis)Behaves under Stress Dynamics of Polymer Chains Atop Different Materials Priming the Pump in the Fight against Drug-Resistant Tuberculosis Science Highlights Archives: 2013 | 2012 | 2011 | 2010 2009 | 2008 | 2007 | 2006 2005 | 2004 | 2003 | 2002 2001 | 2000 | 1998 | Subscribe to APS Science Highlights rss feed Engineering Thin-Film Oxide Interfaces NOVEMBER 12, 2012 Bookmark and Share LAO thin films on STO substrates are depicted in the top schematics (LAO indicated by blue spheres, STO by green spheres). The top left-hand panel demonstrates a chemically broad interface resulting from conventional growth in a low pressure oxygen environment. In contrast, the top

413

Thin-Film Reliability Trends Toward Improved Stability  

SciTech Connect (OSTI)

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (R{sub d}) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2 {+-} 0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-01-01T23:59:59.000Z

414

Thin-Film Reliability Trends Toward Improved Stability: Preprint  

SciTech Connect (OSTI)

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (Rd) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2+/-0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-07-01T23:59:59.000Z

415

Method for formation of thin film transistors on plastic substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

1998-10-06T23:59:59.000Z

416

Method for formation of thin film transistors on plastic substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

1998-10-06T23:59:59.000Z

417

Thin film battery and method for making same  

DOE Patents [OSTI]

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

Bates, John B. (Oak Ridge, TN); Dudney, Nancy J. (Knoxville, TN); Gruzalski, Greg R. (Oak Ridge, TN); Luck, Christopher F. (Knoxville, TN)

1994-01-01T23:59:59.000Z

418

Surface oxidation of Permalloy thin films  

SciTech Connect (OSTI)

The chemical and magnetic structures of oxides on the surface of Permalloy Ni{sub 81}Fe{sub 19} films were investigated as functions of annealing time with x-ray and polarized neutron reflectometry. For annealing times of less than one hour, the oxide consisted of a 1.5-nm-thick layer of NiO on an Fe oxide layer that was in contact with Permalloy. The Fe oxide thickness increases with annealing time with a parabolic rate constant of 10{sup -18} cm{sup 2} s{sup -1} (for an annealing temperature of 373 K). The growth of the oxide layer is limited by the rate at which oxygen appears below the NiO layer. No portion of the oxide region was found to be ferromagnetically ordered for films annealed less than one hour. The growth of the Fe oxide region is well correlated with the measured increase of the second-order magnetic susceptibility for similarly prepared samples.

Fitzsimmons, M. R.; Crawford, T. M. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Silva, T. J. [National Institute of Standards and Technology, Boulder, Colorado 80303 (United States)

2006-01-01T23:59:59.000Z

419

Method for making dense crack free thin films  

DOE Patents [OSTI]

The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

Jacobson, Craig P. (Lafayette, CA); Visco, Steven J. (Berkeley, CA); De Jonghe, Lutgard C. (Lafayette, CA)

2007-01-16T23:59:59.000Z

420

Amorphous silicon thin film transistor as nonvolatile device.  

E-Print Network [OSTI]

particles before loaded into the deposition chamber. 2.2.2. Equipment for Plasma Processes Plasma-Enhanced Chemical Vapor...: Dr. Yue Kuo n-channel and p-channel amorphous-silicon thin-film transistors (a-Si:H TFTs) with copper electrodes prepared by a novel plasma etching process have been fabricated and studied. Their characteristics are similar to those of TFTs...

Nominanda, Helinda

2008-10-10T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Synthesis of thin films and materials utilizing a gaseous catalyst  

DOE Patents [OSTI]

A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

2013-10-29T23:59:59.000Z

422

Formation of thin-film resistors on silicon substrates  

DOE Patents [OSTI]

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

1988-11-01T23:59:59.000Z

423

Electric Field Induced Sphere-to-Cylinder Transition in Diblock Copolymer Thin Films  

E-Print Network [OSTI]

Electric Field Induced Sphere-to-Cylinder Transition in Diblock Copolymer Thin Films Ting Xu, A. V Manuscript Received June 21, 2004 ABSTRACT: An electric field induced sphere-to-cylinder transition in thin. In the absence of an applied electric field, thin films of the asymmetric diblock copolymer consisted of layers

Ocko, Ben

424

Electrical characteristics of Ta2O5 thin films deposited by electron beam gun evaporation  

E-Print Network [OSTI]

Electrical characteristics of Ta2O5 thin films deposited by electron beam gun evaporation V films deposited by a simple electron beam gun evaporator. We describe thicknessO5 thin films deposited by a simple electron beam gun evaporator which enables versatility

Eisenstein, Gadi

425

High-throughput analysis of thin-film stresses using arrays of micromachined cantilever beams  

E-Print Network [OSTI]

High-throughput analysis of thin-film stresses using arrays of micromachined cantilever beams Hyun-throughput residual stress measurements on thin films by means of micromachined cantilever beams and an array of parallel laser beams. In this technique, the film of interest is deposited onto a silicon substrate

426

Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films  

DOE Patents [OSTI]

Sr{sub x}Ba{sub 1{minus}x}Nb{sub 2}O{sub 6}, where x is greater than 0.25 and less than 0.75, and KNbO{sub 3} ferroelectric thin films metalorganic chemical vapor deposited on amorphous or crystalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface are disclosed. Such films can be used in electronic, electro-optic, and frequency doubling components. 8 figs.

Wessels, B.W.; Nystrom, M.J.

1998-05-19T23:59:59.000Z

427

Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films  

DOE Patents [OSTI]

Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or crystalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

Wessels, Bruce W. (Wilmette, IL); Nystrom, Michael J. (Germantown, MD)

1998-01-01T23:59:59.000Z

428

Solar Plus SA | Open Energy Information  

Open Energy Info (EERE)

Solar Plus SA Place: Lisbon, Portugal Sector: Solar Product: Plans to set up a 5.5MWyear thin-film silicon module factory in Aveiro, Portugal, using EPV Solar equipment, and plans...

429

AOS Solar Inc | Open Energy Information  

Open Energy Info (EERE)

AOS Solar Inc Jump to: navigation, search Name: AOS Solar Inc Product: Manufacturer of thin-film silicon-on-glass. References: AOS Solar Inc1 This article is a stub. You can help...

430

Sputter deposition for multi-component thin films  

DOE Patents [OSTI]

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

Krauss, Alan R. (Plainfield, IL); Auciello, Orlando (Cary, NC)

1990-01-01T23:59:59.000Z

431

Sputter deposition for multi-component thin films  

DOE Patents [OSTI]

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

Krauss, A.R.; Auciello, O.

1990-05-08T23:59:59.000Z

432

Decay Processes in the Presence of Thin Superconducting Films  

E-Print Network [OSTI]

In a recent paper [Phys. Rev. Lett. 97, 070401 (2006)] the transition rate of magnetic spin-flip of a neutral two-level atom trapped in the vicinity of a thick superconducting body was studied. In the present paper we will extend these considerations to a situation with an atom at various distances from a dielectric film. Rates for the corresponding electric dipole-flip transition will also be considered. The rates for these atomic flip transitions can be reduced or enhanced, and in some situations they can even be completely suppressed. For a superconducting film or a thin film of a perfect conducting material various analytical expressions are derived that reveals the dependence of the physical parameters at hand.

Per K. Rekdal; Bo-Sture K. Skagerstam

2006-09-20T23:59:59.000Z

433

Order on disorder: Copper phthalocyanine thin films on technical substrates  

SciTech Connect (OSTI)

We have studied the molecular orientation of the commonly used organic semiconductor copper phthalocyanine (CuPC) grown as thin films on the technically relevant substrates indium tin oxide, oxidized Si, and polycrystalline gold using polarization-dependent x-ray absorption spectroscopy, and compare the results with those obtained from single crystalline substrates [Au(110) and GeS(001)]. Surprisingly, the 20{endash}50 nm thick CuPC films on the technical substrates are as highly ordered as on the single crystals. Importantly, however, the molecular orientation in the two cases is radically different: the CuPC molecules stand on the technical substrates and lie on the single crystalline substrates. The reasons for this and its consequences for our understanding of the behavior of CuPC films in devices are discussed. {copyright} 2001 American Institute of Physics.

Peisert, H.; Schwieger, T.; Auerhammer, J. M.; Knupfer, M.; Golden, M. S.; Fink, J.; Bressler, P. R.; Mast, M.

2001-07-01T23:59:59.000Z

434

Long-laser-pulse method of producing thin films  

DOE Patents [OSTI]

A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agen The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.

Balooch, Mehdi (Berkeley, CA); Olander, Donald K. (Berkeley, CA); Russo, Richard E. (Walnut Creek, CA)

1991-01-01T23:59:59.000Z

435

Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy  

SciTech Connect (OSTI)

Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructure after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases.

Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zhang, Yanmin; Hu, Ran; Ren, Naifei [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-11-14T23:59:59.000Z

436

Thorough Characterization of Sputtered CuO Thin Films Used as Conversion Material Electrodes for Lithium Batteries  

Science Journals Connector (OSTI)

CuO is often considered as a p-type semiconductor and, due to its properties, is useful for many applications such as transistors,(1) light emitting diodes(2) or for solar cells and electrochromic devices. ... The influence of various parameters such as oxygen flow rate, substrate temperature, substrate-target distance, total pressure and target orientation (horizontal or tilted) was investigated with the aim to tailor the film properties giving the best electrochemical performances. ... Depth-profiling XPS analyses showed that the reduction processes spread from the thin film surface to the current collector, but that the oxidation starts at the surface of the current collector. ...

Brigitte Pecquenard; Frdric Le Cras; Delphine Poinot; Olivier Sicardy; Jean-Pierre Manaud

2014-02-12T23:59:59.000Z

437

EE580 Solar Cells Todd J. Kaiser  

E-Print Network [OSTI]

7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 06 · Solar Cell Materials & Structures 1Montana State University: Solar Cells Lecture 6: Solar Cells Solar Cell Technologies · A) Crystalline Silicon · B) Thin Film · C) Group III-IV Cells 2Montana State University: Solar Cells Lecture 6: Solar

Kaiser, Todd J.

438

Thin film reactions on alloy semiconductor substrates  

SciTech Connect (OSTI)

The interactions between Pt and In{sub .53}Ga{sub .47}As have been studied. In{sub .53}Ga{sub .47}As substrates with 70nm Pt films were encapsulated in SiO{sub 2}, and annealed up to 600{degree}C in flowing forming gas. The composition and morphology of the reaction product phases were studied using x-ray diffraction, Auger depth profiling, and transmission electron microscopy. The reaction kinetics were examined with Rutherford Backscattering. Results show that Pt/In{sub .53}Ga{sub .47}As reacts to form many of the reaction products encountered in the Pt/GaAs and Pt/InP reactions: PtGa, Pt{sub 3}Ga, and PtAs{sub 2}. In addition, a ternary phase, Pt(In:Ga){sub 2}, develops, which is a solid solution between PtIn{sub 2} and PtGa{sub 2}. The amount of Ga in the ternary phase increases with annealing temperature, which causes a decrease in the lattice parameter of the phase. The reaction products show a tendency to form layered structures, especially for higher temperatures and longer annealing times. Unlike the binary case, the PtAs{sub 2}, phase is randomly oriented on the substrate, and is intermingle with a significant amount of Pt(In:Ga){sub 2}. Following Pt/In{sub .53}Ga{sub .47}As reactions, two orientation relationships between the Pt(In:Ga){sub 2} product phase and the substrate were observed, despite the large mismatch with the substrate ({approximately}8%). For many metal/compound semiconductor interactions, the reaction rate is diffusion limited, i.e. exhibits a parabolic dependence on time. An additional result of this study was the development of an In-rich layer beneath the reacted layer. The Auger depth profile showed a substantial increase in the sample at this layer. This is a significant result for the production of ohmic contacts, as the Schottky barrier height in this system lower for higher In concentrations. 216 refs.

Olson, D.A.

1990-11-01T23:59:59.000Z

439

Near-infrared photodetector consisting of J-aggregating cyanine dye and metal oxide thin films  

E-Print Network [OSTI]

We demonstrate a near-infrared photodetector that consists of a thin film of the J-aggregating cyanine dye, U3, and transparent metal-oxide charge transport layers. The high absorption coefficient of the U3 film, combined ...

Osedach, Timothy P.

440

Electrical and optical properties of polycrystalline Ag-doped CdS thin films  

Science Journals Connector (OSTI)

CdS and CdS:Ag thin films were prepared using the spray pyrolysis technique. The prepared films were deposited on glass substrate kept at a temperature of (42010) C. The optical and electrical properties hav...

M. A. Khalid; H. A. Jassem

1993-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Strain engineered barium strontium titanate for tunable thin film resonators H. Khassaf,1  

E-Print Network [OSTI]

Strain engineered barium strontium titanate for tunable thin film resonators H. Khassaf,1 N of epitaxial (001) barium strontium titanate (BST) films are computed as functions of composition, misfit

Alpay, S. Pamir

442

Solid-state dewetting of continuous and patterned single crystal Ni thin films  

E-Print Network [OSTI]

Solid-state dewetting of thin films is a process through which continuous solid films agglomerate to form islands. This process is driven by capillary forces, often occurring via surface self-diffusion. Solid-state dewetting ...

Ye, Jongpil

2011-01-01T23:59:59.000Z

443

Effects of diffusion on lubricant distribution under flying headon thin-film disks  

Science Journals Connector (OSTI)

Lubricants on thin-film disks have large effects on headdisk interface characteristics. They reduce head and disk wear while thick lubricant film increases friction ... in many cases. Lubricant depletion due to

K. Yanagisawa; Y. Kawakubo; M. Yoshino

2005-01-01T23:59:59.000Z

444

400V Class Resistive Fault Current Limiter using YBCO Thin Films  

Science Journals Connector (OSTI)

A resistive fault current limiter with 410 Vrms x 56 Arms was realized by connecting six current limiting elements in series. An element was...3...single crystal and a metal film on AIN. The YBCO thin film was co...

Yuki Kudo; Hiroshi Kubota; Mutsuki Yamazaki

2000-01-01T23:59:59.000Z

445

Low Cost Fabrication of Thin-Film Ceramic Membranes for Nonshrinking...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Low Cost Fabrication of Thin-Film Ceramic Membranes for Nonshrinking Substrates Lawrence Berkeley National Laboratory Contact LBL About This Technology Technology Marketing...

446

Emission-angle-dependent photoluminescence of rubrene thin films on silver  

Science Journals Connector (OSTI)

Rubrene layers with thickness comparable to a visible light wavelength on silver thin film exhibit anomalous photoluminescence (PL) spectra that depend strongly on emission angle. The...

Wakamatsu, Takashi

2014-01-01T23:59:59.000Z

447

Studies of Block Copolymer Thin Films and Mixtures with an Ionic Liquid  

E-Print Network [OSTI]

identification of structure and domain size in block copolymer thin films using RSoXS enables a quantitative comparison of the bulk

Virgili, Justin

2009-01-01T23:59:59.000Z

448

E-Print Network 3.0 - as2s3 thin films Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

51 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

449

E-Print Network 3.0 - aggase2 thin films Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

42 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

450

E-Print Network 3.0 - ag-in-se thin films Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

36 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

451

E-Print Network 3.0 - alendronate-hydroxyapatite thin films Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

35 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

452

E-Print Network 3.0 - almgb14 thin films Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

38 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

453

E-Print Network 3.0 - antibacterial thin films Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

78 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

454

E-Print Network 3.0 - abrasion-resistant thin films Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

73 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

455

E-Print Network 3.0 - al-cu-fe thin films Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

52 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

456

E-Print Network 3.0 - active thin films Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Western Ontario a JOINT presentation of the Summary: and conducting thin films for optoelectronic applications from carbon nanotubes and graphene" ABSTRACT: Low... . The interest...

457

Study of GaN:Eu3+ Thin Films Deposited by Metallorganic  

E-Print Network [OSTI]

as an advantageous architecture for transparent electrodes in optoelectronic devices due primarily to high characteristics of electrodes in optoelectronic devices and in supercapactiors, we introduced oxide thin films

McKittrick, Joanna

458

Thin-Film Fiber Optic Sensors for Power Control and Fault Detection. Final Report  

SciTech Connect (OSTI)

Described is the development of an optical current measurement device, an active power conditioning system, and sol gel type thin films for the detection of magnetic fields.

Duncan, Paul Grems

2003-09-30T23:59:59.000Z

459

Electrostatic layer-by-layer assembly of hybrid thin films using polyelectrolytes and inorganic nanoparticles.  

E-Print Network [OSTI]

??Polymer/inorganic nanoparticle hybrid thin films, primarily composed of functional inorganic nanoparticles, are of great interest to researchers because of their interesting electronic, photonic, and optical (more)

Peng, Chunqing

2011-01-01T23:59:59.000Z

460

Robust Thin-Film Generator Based on Segmented Contact-Electrification for Harvesting Wind Energy  

Science Journals Connector (OSTI)

Robust Thin-Film Generator Based on Segmented Contact-Electrification for Harvesting Wind Energy ... energies in a wide range of forms. ...

Xian Song Meng; Guang Zhu; Zhong Lin Wang

2014-05-13T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


461

Thin Solid Films 430 (2003) 125129 0040-6090/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved.  

E-Print Network [OSTI]

for a-Si:H solar cell fabrication. In addition to photovoltaic applications, a-Si:H is also used of amorphous silicon (a-Si:H)-based photovoltaic devices, it is important to deposit high- quality a progress has been made in hydrogenated amorphous silicon (a-Si:H)-based thin film photovoltaic devices

Deng, Xunming

462

Temperature Dependence of Sputtered Conductive Carbon Thin Films Bull. Korean Chem. Soc. 2011, Vol. 32, No. 3 939 DOI 10.5012/bkcs.2011.32.3.939  

E-Print Network [OSTI]

°C to 700 °C in increments of 100 °C using a rapid thermal annealing method by vacuum furnace in the electronic devices such as organic thin film transistor (OTFT), dye-sensitized solar cell (DSSC), and field by a vacuum furnace in vacuum ambient, and the effects of annealing temperature on struc- tural, tribological

Boo, Jin-Hyo

463

AN INVESTIGATION OF THE FLUID DYNAMICS ASPECTS OF THIN LIQUID FILM PROTECTION  

E-Print Network [OSTI]

a conservative "design window" for film detachment. Initial observations of film flow around cy- lindricalAN INVESTIGATION OF THE FLUID DYNAMICS ASPECTS OF THIN LIQUID FILM PROTECTION SCHEMES FOR INERTIAL liquid film wall protection systems have been conducted in support of the ARIES-IFE study. Both

California at San Diego, University of

464

Silicon-integrated thin-film structure for electro-optic applications  

DOE Patents [OSTI]

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

McKee, Rodney A. (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

465

A replaceable reflective film for solar concentrators  

SciTech Connect (OSTI)

The 3M Company manufactures a silvered acrylic film called ECP-305 that is regarded as the preferred reflective film for use on stretched-membrane heliostats. However, ECP-305 will degrade in time, due to both corrosion of the silver layer and delamination at the film's silver-to-acrylic interface, and will eventually need to be replaced. 3M uses a very aggressive adhesive on this film, and once it is laminated, replacement is very difficult. The purpose of this investigation was the development of a replaceable reflector, a reflective film that can be easily removed and replaced. A replaceable reflector was successfully configured by laminating ECP-305 to the top surface of a smooth, dimensionally stable polymer film, with a removable adhesive applied to the underside of the polymer film. Several stages of screening and testing led to the selection of a 0.010-inch thick polycarbonate (GE 8030) as the best polymer film and a medium tack tape (3M Y-9425) was selected as the best removable adhesive. To demonstrate the feasibility of the replaceable reflector concept and to provide a real-time field test, the chosen construction was successfully applied to the 50-m{sup 2} SKI heliostat at the Central Receiver Test Facility at Sandia National Laboratories in Albuquerque. 4 refs., 13 figs., 7 tabs.

Not Available

1991-09-01T23:59:59.000Z

466

RANDOM DEPOSITION MODEL OF CDS LAYER IN CDS/CDTE THINFILM SOLAR CELLS  

E-Print Network [OSTI]

THESIS RANDOM DEPOSITION MODEL OF CDS LAYER IN CDS/CDTE THIN­FILM SOLAR CELLS Submitted by Lei Chen LAYER IN CDS/CDTE THIN­FILM SOLAR CELLS BE AC- CEPTED AS FULFILLING IN PART REQUIREMENTS FOR THE DEGREE MODEL OF CDS LAYER IN CDS/CDTE THIN­FILM SOLAR CELLS Thin­film solar cells are developing dramatically

Sites, James R.

467

Ames Lab 101: Improving Solar Cell Efficiency  

ScienceCinema (OSTI)

Rana Biswas, a scientist with the Ames Laboratory, discusses his team's research in creating more efficient solar cells and working with Iowa Thin Film to produce these cells.

Biswas, Rana

2012-08-29T23:59:59.000Z

468

Light Management Toward Efficient Organic Solar Cells  

Science Journals Connector (OSTI)

Light management methods for organic solar cells (OSCs) are presented: (i) thin-film optic method utilizing the inherent asymmetry of semitransparent OSCs; (ii) V-groove-based...

Yoo, Seunghyup; Han, Donggeon; Kim, Hoyeon; Cho, Changsoon; Lee, Jung-Yong

469

Ames Lab 101: Improving Solar Cell Efficiency  

SciTech Connect (OSTI)

Rana Biswas, a scientist with the Ames Laboratory, discusses his team's research in creating more efficient solar cells and working with Iowa Thin Film to produce these cells.

Biswas, Rana

2011-01-01T23:59:59.000Z

470

Solar Innovation Timeline | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

cell Photo of two researchers analyzing a thin, circular shaped film under a small light. NREL researchers develop a gallium indium phosphidegallium arsenide solar cell...

471

Combinatorial study of zinc tin oxide thin-film transistors  

SciTech Connect (OSTI)

Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO:SnO{sub 2} ratio of the film varies as a function of position on the sample, from pure ZnO to SnO{sub 2}, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2 to 12 cm{sup 2}/V s, with two peaks in mobility in devices at ZnO fractions of 0.80{+-}0.03 and 0.25{+-}0.05, and on/off ratios as high as 10{sup 7}. Transistors composed predominantly of SnO{sub 2} were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

McDowell, M. G.; Sanderson, R. J.; Hill, I. G. [Dalhousie University, Department of Physics, Halifax, Nova Scotia B3H 3J5 (Canada)

2008-01-07T23:59:59.000Z

472

Ablation of film stacks in solar cell fabrication processes  

DOE Patents [OSTI]

A dielectric film stack of a solar cell is ablated using a laser. The dielectric film stack includes a layer that is absorptive in a wavelength of operation of the laser source. The laser source, which fires laser pulses at a pulse repetition rate, is configured to ablate the film stack to expose an underlying layer of material. The laser source may be configured to fire a burst of two laser pulses or a single temporally asymmetric laser pulse within a single pulse repetition to achieve complete ablation in a single step.

Harley, Gabriel; Kim, Taeseok; Cousins, Peter John

2013-04-02T23:59:59.000Z

473

CHEMICAL MAKERS INVEST IN SOLAR  

Science Journals Connector (OSTI)

CHEMICAL MAKERS INVEST IN SOLAR ... CAPACITY BOOST: New projects target raw materials and research ... The projects will increase capacity and advance research for chemical components of both traditional polysilicon solar cells and newer thin-film modules. ...

MELODY VOITH

2008-12-22T23:59:59.000Z

474

Parabolic-Dish Solar Concentrators of Film on Foam  

E-Print Network [OSTI]

Parabolic and spherical mirrors are constructed of aluminized PET polyester film on urethane foam. During construction, the chosen shape of the mirror is created by manipulating the elastic/plastic behavior of the film with air pressure. Foam is then applied to the film and, once hardened, air pressure is removed. At an f-number of 0.68, preliminary models have an optical angular spread of less than 0.25 degrees, a factor of 3.3 smaller than that for a perfectly spherical mirror. The possibility exists for creating large-lightweight mirrors with excellent shape and stiffness. These "film-on-foam" construction techniques may also be applicable to parabolic-trough solar concentrators but do not appear to be suitable for optical imaging applications because of irregularities in the film.

Barton, Sean A

2009-01-01T23:59:59.000Z

475

Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser  

SciTech Connect (OSTI)

The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-?m thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550?C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450?C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550?C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450?C, which limits the solar cell performance by n?=?2 recombination, and a performance degradation is expected due to severe shunting.

Yun, J., E-mail: j.yun@unsw.edu.au; Varalmov, S.; Huang, J.; Green, M. A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Suntech R and D Australia, Botany, New South Wales 2019 (Australia)

2014-06-16T23:59:59.000Z

476

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers  

SciTech Connect (OSTI)

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Antoniadis, H.

2011-03-01T23:59:59.000Z

477

Mat. Res. Soc. Symp. Proc. Vol. 668 @ 2001 Materials Research Society Influence of proton irradiation and development of flexible CdTe solar cells on polyimide  

E-Print Network [OSTI]

. Polycrystalline thin film solar cells of II-VI and I-II-VI compounds are potentially important because power (defined as the ratio of output electrical power to the solar module weight). Thin film solar cells on polymer films can yield more than 2- kW/kg specific power. CIGS solar cells of about 10 to 12

Romeo, Alessandro

478

Method of lift-off patterning thin films in situ employing phase change resists  

DOE Patents [OSTI]

Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas. The condensed solid film is heated selectively with a patterned stamp to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film. An organic semiconductor film is coated on the patterned resist film and the patterned resist film is heated to cause it to sublime away and to lift off because of the phase change.

Bahlke, Matthias Erhard; Baldo, Marc A; Mendoza, Hiroshi Antonio

2014-09-23T23:59:59.000Z

479

Critical lines of magnetic semiconductor thin films: Experiment  

Science Journals Connector (OSTI)

The irreversibilities between the field-cooled and zero-field-cooled dc magnetization were used to determine the field and composition dependence of the spin-glass freezing temperature in CdCr2-2x In2x Se4 thin films. The magnetic ordering was confirmed by the temperature dependence of induced magnetization M and unidirectional magnetic anisotropy field Han determined from ferromagnetic resonance data (4.2120 K). The experimentally determined H-T phase diagram shows two instability lines: the Gabay-Toulouse-type (GT line) and the Almeida-Thouless-type (AT line) for thin films of CdCr2 Se4 :In with reentrant transition and the AT line for CdCr2-2x In2x Se4 in the spin-glass state. The AT and GT lines obey the relation ?=[(n+1)(n+2)/8]1/3 (heff )2/3 and ?=[(n2 +4n+2)/(4(n+2)2 )] (heff )2 , respectively, for the normalized effective field heff =ha +hm . The first term in heff stands for the external magnetic field, while the second is related to the internal field of the infinite ferromagnetic network (long-range ordering). The value of hm determined from the H-T phase diagram was found to be dependent on indium concentration.

M. Lubecka; L. J. Maksymowicz; R. Szymczak; W. Powroz-acutenik

1997-03-01T23:59:59.000Z

480

Issue and challenges facing rechargeable thin film lithium batteries  

Science Journals Connector (OSTI)

New materials hold the key to fundamental advances in energy conversion and storage, both of which are vital in order to meet the challenge of global warming and the finite nature of fossil fuels. Nanomaterials in particular offer unique properties or combinations of properties as electrodes and electrolytes in a range of energy devices. Technological improvements in rechargeable solid-state batteries are being driven by an ever-increasing demand for portable electronic devices. Lithium batteries are the systems of choice, offering high energy density, flexible, lightweight design and longer lifespan than comparable battery technologies. We present a brief historical review of the development of lithium-based thin film rechargeable batteries highlight ongoing research strategies and discuss the challenges that remain regarding the discovery of nanomaterials as electrolytes and electrodes for lithium batteries also this article describes the possible evolution of lithium technology and evaluates the expected improvements, arising from new materials to cell technology. New active materials under investigation and electrode process improvements may allow an ultimate final energy density of more than 500Wh/L and 200Wh/kg, in the next 56 years, while maintaining sufficient power densities. A new rechargeable battery technology cannot be foreseen today that surpasses this. This report will provide key performance results for thin film batteries and highlight recent advances in their development.

Arun Patil; Vaishali Patil; Dong Wook Shin; Ji-Won Choi; Dong-Soo Paik; Seok-Jin Yoon

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film solar" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Enhancement of photoluminescence due to erbium-doped in CdS thin films  

Science Journals Connector (OSTI)

Cadmium sulfide (CdS) thin films were synthesized by chemical bath ... on glass substrates at 80C. The CdS thin films were doped with erbium (Er3+) during the growth process by adding aqueous solutions of Er(NO

O. Zelaya-Angel; S. A. Toms; P. Rodrguez

2012-01-01T23:59:59.000Z

482

EPMA Instructions for Thin Film Samples General guidelines to reading computer related commands  

E-Print Network [OSTI]

EPMA Instructions for Thin Film Samples General guidelines to reading computer related commands: `Single quote' = menu item, window, or icon "Double quote" = something you type = button you your sample, thin film up, on the dot of epoxy 4. Repeat until all samples are on the puck 5. Flip your

483

The effect of stress on the dielectric properties of barium strontium titanate thin films  

E-Print Network [OSTI]

The effect of stress on the dielectric properties of barium strontium titanate thin films T. M Barium strontium titanate thin films are being developed as capacitors in dynamic random access memories to their large permittivities, barium strontium titan- ate BST bulk ceramics have long been used to make high

Suo, Zhigang

484

High tunability barium strontium titanate thin films for rf circuit applications  

E-Print Network [OSTI]

High tunability barium strontium titanate thin films for rf circuit applications N. K. Pervez,a) P) Large variations in the permittivity of rf magnetron sputtered thin-film barium strontium titanate have/cm. © 2004 American Institute of Physics. [DOI: 10.1063/1.1818724] Barium strontium titanate (BST) is a solid

York, Robert A.

485

Optimization of High Tunability Barium Strontium Titanate Thin Films Grown by RF Magnetron  

E-Print Network [OSTI]

Optimization of High Tunability Barium Strontium Titanate Thin Films Grown by RF Magnetron Abstract-- Barium strontium titanate is a solid solution perovskite with a field-dependent permittivity.7 MV/cm. I. INTRODUCTION In recent years there has been much interest in thin-film barium strontium

York, Robert A.

486

Discrete Barium Strontium Titanate (BST) Thin-Film Interdigital Varactors on Alumina: Design, Fabrication, Characterization, and  

E-Print Network [OSTI]

Discrete Barium Strontium Titanate (BST) Thin-Film Interdigital Varactors on Alumina: Design, Raleigh, NC-27695-7914, USA. Email:jayeshnath@ieee.org Abstract -- Discrete Barium Strontium Titanate (BST, capacitors, BST, ferroelectric, thin-film, barium strontium titanate, bandpass filter, IP3, ACPR, temperature

487

Self-similar solutions for a fractional thin film equation governing hydraulic fractures  

E-Print Network [OSTI]

Self-similar solutions for a fractional thin film equation governing hydraulic fractures C. Imbert equation governing hydraulic fractures are constructed. One of the boundary con- ditions, which accounts, 35R11, 35C06 Keywords: Hydraulic fractures, higher order equation, thin films, fractional Laplacian

Boyer, Edmond

488

STRAIN SENSING WITH PIEZOELECTRIC ZINC OXIDE THIN FILMS FOR VIBRATION SUPPRESSION IN HARD DISK DRIVES  

E-Print Network [OSTI]

was successfully obtained while the suspension was flying on a disk as in normal drive operation. PreliminarySTRAIN SENSING WITH PIEZOELECTRIC ZINC OXIDE THIN FILMS FOR VIBRATION SUPPRESSION IN HARD DISK This paper describes the integration of thin film ZnO strain sensors onto hard disk drive suspensions

Horowitz, Roberto

489

Rubbery Graft Copolymer Electrolytes for Solid-State, Thin-Film Lithium Batteries  

E-Print Network [OSTI]

Rubbery Graft Copolymer Electrolytes for Solid-State, Thin-Film Lithium Batteries Patrick E. Trapa to be stable over a wide temperature range and voltage window. Solid-state, thin-film batteries comprised triflate-doped POEM-g-PDMS, which exhibited solid-like mechanical behavior, were nearly identical to those

Sadoway, Donald Robert

490

Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films  

E-Print Network [OSTI]

Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films A. Bulusu and D. G. Walker1 Interdisciplinary Program in Material Science Vanderbilt University Nashville on device characteristics of 1D and 2D thin film superlattices whose applications include thermoelectric

Walker, D. Greg

491

Bi-Sr-Ca-Cu-O thin films grown by flash evaporation and pulsed laser deposition  

E-Print Network [OSTI]

. Thin films were grown by flash evaporation at Texas A&M University, and by pulsed laser deposition (PLD) at the University of Wollongong, Australia. The latter of these techniques is widely used for growing thin films of various compounds. Single...

Ganapathy Subramanian, Santhana

2004-09-30T23:59:59.000Z

492

Measuring the fracture toughness of ultra-thin films with application to AlTa coatings  

E-Print Network [OSTI]

1 Measuring the fracture toughness of ultra-thin films with application to AlTa coatings Yong Xiang Abstract An experimental technique is presented for measuring the fracture toughness of brittle thin films with a focused ion beam and the membranes are pressurized until rupture. The fracture stress of the membrane

493

Carbon nanotube thin films with ordered structures Chunsheng Du,a  

E-Print Network [OSTI]

Carbon nanotube thin films with ordered structures Chunsheng Du,a Jeff Yehb and Ning Pan*a Received December 2004 DOI: 10.1039/b414682d Carbon nanotube thin films with ordered structures have been developed properties, carbon nanotubes have aroused a great deal of research interest, and a wider range of potential

Pan, Ning

494

X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films  

E-Print Network [OSTI]

X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films T. J. Richardsona@lbl.gov Abstract Mixed metal thin films containing magnesium and a first-row transition element exhibit very large and coordination of the magnesium and transition metal atoms during hydrogen absorption were studied using dynamic

495

Synthesis and Screening of Thin Films in the CeCl3-CeBr3 System...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Screening of Thin Films in the CeCl3-CeBr3 System for Scintillator Applications. Synthesis and Screening of Thin Films in the CeCl3-CeBr3 System for Scintillator Applications....

496

Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication  

SciTech Connect (OSTI)

The effect that direct current (dc) substrate bias has on radio frequency-sputter-deposited amorphous silicon (a-Si) films has been investigated. The substrate bias produces a denser a-Si film with fewer defects compared to unbiased films. The reduced number of defects results in a higher resistivity because defect-mediated conduction paths are reduced. Thin film transistors (TFTs) that were completely sputter deposited were fabricated and characterized. The TFT with the biased a-Si film showed lower leakage (off-state) current, higher on/off current ratio, and higher transconductance (field effect mobility) than the TFT with the unbiased a-Si film.

Jun, Seung-Ik; Rack, Philip D.; McKnight, Timothy E.; Melechko, Anatoli V.; Simpson, Michael L. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996-2200 (United States); Molecular Scale Engineering and Nanoscale Technologies Research Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

2005-09-26T23:59:59.000Z

497

Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications  

Science Journals Connector (OSTI)

This paper describes a systematic approach to analyze the simultaneous impact of various reactant plasma parameters of remote plasma enhanced ALD (PEALD) on the ZnO thin film properties. Particular emphasis is placed on the film stoichiometry which affects the electrical properties of the thin film. Design of Experiment (DOE) is used to study the impact of the oxygen plasma parameters such as the RF power, pressure and plasma time to realize semiconductor quality of ZnO thin film. Based on the optimized plasma condition, staggered bottom-gate \\{TFTs\\} were fabricated and its electrical characteristics were measured.

S.M. Sultan; O.D. Clark; T.B. Masaud; Q. Fang; R. Gunn; M.M.A. Hakim; K. Sun; P. Ashburn; H.M.H. Chong

2012-01-01T23:59:59.000Z

498

Solar Adoption and Energy Consumption in the Residential Sector  

E-Print Network [OSTI]

modules." Thin Film Solar Technology 7409(1). Wilson-Wright,conservation and solar technology through tax credits. Alimited the ERP to non-solar technologies, in deference to

McAllister, Joseph Andrew

2012-01-01T23:59:59.000Z

499

Low-Cost, Lightweight Solar Concentrator | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Documents & Publications Low-Cost, Lightweight Solar Concentrators - FY13 Q1 Low-Cost Light Weigh Thin Film Solar Concentrators Low-Cost, Lightweight Solar Concentrators FY13...

500

Reactions of Disilane on Cu(111): Direct Observation of Competitive Dissociation, Disproportionation, and Thin Film Growth Processes  

Science Journals Connector (OSTI)

Reactions of Disilane on Cu(111): Direct Observation of Competitive Dissociation, Disproportionation, and Thin Film Growth Processes ...

Shrikant P. Lohokare; Benjamin C. Wiegand; Ralph G. Nuzzo

1995-10-01T23:59:59.000Z