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Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Thin film photovoltaic cell  

DOE Patents (OSTI)

A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

Meakin, John D. (Newark, DE); Bragagnolo, Julio (Newark, DE)

1982-01-01T23:59:59.000Z

2

Thin film photovoltaic device  

DOE Patents (OSTI)

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

Catalano, A.W.; Bhushan, M.

1982-08-03T23:59:59.000Z

3

Thin film photovoltaic device  

DOE Patents (OSTI)

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

Catalano, Anthony W. (Wilmington, DE); Bhushan, Manjul (Wilmington, DE)

1982-01-01T23:59:59.000Z

4

Thin Film Photovoltaics Research  

Energy.gov (U.S. Department of Energy (DOE))

The U.S. Department of Energy (DOE) supports research and development of four thin-film technologies on the path to achieving cost-competitive solar energy, including:

5

SunShot Initiative: Thin Film Photovoltaics Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Film Photovoltaics Research Thin Film Photovoltaics Research to someone by E-mail Share SunShot Initiative: Thin Film Photovoltaics Research on Facebook Tweet about SunShot Initiative: Thin Film Photovoltaics Research on Twitter Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Google Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Delicious Rank SunShot Initiative: Thin Film Photovoltaics Research on Digg Find More places to share SunShot Initiative: Thin Film Photovoltaics Research on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Thin Film Photovoltaics Research The U.S. Department of Energy (DOE) supports research and development of

6

Thin film photovoltaic panel and method  

DOE Patents (OSTI)

A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

Ackerman, Bruce (El Paso, TX); Albright, Scot P. (El Paso, TX); Jordan, John F. (El Paso, TX)

1991-06-11T23:59:59.000Z

7

NREL: Photovoltaics Research - Thin Film Photovoltaic Partnership Project  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed the United States to attain world leadership in this area of solar technology. Three national R&D teams focused on thin-film semiconductor materials: amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS) and its alloys. The Module Reliability Team and Environmental Health and Safety Team were crosscutting. The teams comprised researchers from the solar industry, academia, and NREL who focused their efforts on improving materials, devices, and manufacturing processes-all

8

Enhanced Thin Film Organic Photovoltaic Devices  

A novel structure design for thin film organic photovoltaic (OPV) devices provides a system for increasing the optical absorption in the active layer. The waveguided structure permits reduction of the active layer thickness, resulting in enhanced charge collection and extraction, leading to improved power conversion efficiency compared to standard OPV devices....

2014-01-10T23:59:59.000Z

9

Thin film photovoltaic device with multilayer substrate  

DOE Patents (OSTI)

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Catalano, Anthony W. (Rushland, PA); Bhushan, Manjul (Wilmington, DE)

1984-01-01T23:59:59.000Z

10

Photovoltaic Polycrystalline Thin-Film Cell Basics | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Polycrystalline Thin-Film Cell Basics Polycrystalline Thin-Film Cell Basics Photovoltaic Polycrystalline Thin-Film Cell Basics August 20, 2013 - 2:36pm Addthis Polycrystalline thin-film cells are made of many tiny crystalline grains of semiconductor materials. The materials used in these cells have properties that are different from those of silicon. Thin-film cells have many advantages over their thick-film counterparts. For example, they use much less material. The cell's active area is usually only 1 to 10 micrometers thick, whereas thick films typically are 100 to 300 micrometers thick. Also, thin-film cells can usually be manufactured in a large-area process, which can be an automated, continuous production process. Finally, they can be deposited on flexible substrate materials. The term thin film comes from the method used to deposit the film, not from

11

NREL: Energy Analysis - Crystalline Silicon and Thin Film Photovoltaic  

NLE Websites -- All DOE Office Websites (Extended Search)

Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Assessment Harmonization Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics (Fact Sheet) Cover of the Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics factsheet Download the Fact Sheet Over the last 30 years, hundreds of life cycle assessments (LCAs) have been conducted and published for a variety of residential and utility-scale solar photovoltaic (PV) systems with wide-ranging results. The inconsistencies in these results can be attributed to the technologies evaluated-such as differing system designs, real-world versus conceptual systems, or technology improvements over time-and life cycle assessment methods and assumptions. To better understand greenhouse gas (GHG) emissions from commercial

12

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b  

E-Print Network (OSTI)

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b , Ounsi of an absorbing planar photonic crystal within a thin film photovoltaic cell. The devices are based on a stack with large areas. Keywords: Photonic crystal, Photovoltaic solar cell, Thin film solar cell, Hydrogenated

Paris-Sud XI, Université de

13

Junctionless thin-film ferroelectric oxides for photovoltaic energy Farnood K. Rezaie*a  

E-Print Network (OSTI)

, and the conditions for ideal poling. Photovoltaic characterization of KBNNO cells will determine the efficiency, and cell fill factor (FF). Keywords: Bulk photovoltaics, Perovskite oxide, Ferroelectric thin-film, KBNNO. This creates opportunities for innovation in photovoltaic cells and state of the art optoelectronic devices

Peale, Robert E.

14

Photovoltaics, solar energy materials & thin films-IMRC 2006, Cancun, Mexico: Selected papers  

Science Journals Connector (OSTI)

The International symposium “Photovoltaics, Solar Energy Materials & Thin Films” was held in Cancun, Mexico from 20 to 24 August 2006. More...2 solar cells; and material characterization. A good...2 and the devic...

Xavier Mathew

2007-11-01T23:59:59.000Z

15

Method and apparatus for increasing the durability and yield of thin film photovoltaic devices  

DOE Patents (OSTI)

Thin film photovoltaic cells having a pair of semiconductor layers between an opaque and a transparent electrical contact are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device.

Phillips, James E. (Newark, DE); Lasswell, Patrick G. (Newark, DE)

1987-01-01T23:59:59.000Z

16

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

17

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1996-01-01T23:59:59.000Z

18

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells. 4 figures.

Lauf, R.J.

1994-04-26T23:59:59.000Z

19

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells. 4 figs.

Lauf, R.J.

1996-04-02T23:59:59.000Z

20

Thin Film Materials and Processing Techniques for a Next Generation Photovoltaic Device: Cooperative Research and Development Final Report, CRADA Number CRD-12-470  

SciTech Connect

This research extends thin film materials and processes relevant to the development and production of a next generation photovoltaic device.

van Hest, M.

2013-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network (OSTI)

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells Company has had a conti- nuous effort on thin film solar cells for the past four and a half years

Paris-Sud XI, Université de

22

Method and apparatus for increasing the durability and yield of thin film photovoltaic devices  

DOE Patents (OSTI)

Thin film photovoltaic cells having a pair of semiconductor layers between an opaque and a transparent electrical contact are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device. 10 figs.

Phillips, J.E.; Lasswell, P.G.

1987-02-03T23:59:59.000Z

23

Thin film heterojunction photovoltaic cells and methods of making the same  

DOE Patents (OSTI)

A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250.degree. C. and 500.degree. C. for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.

Basol, Bulent M. (Los Angeles, CA); Tseng, Eric S. (Los Angeles, CA); Rod, Robert L. (Los Angeles, CA)

1983-06-14T23:59:59.000Z

24

A direct thin-film path towards low-cost large-area III-V photovoltaics  

E-Print Network (OSTI)

A direct thin-film path towards low-cost large-area III-V photovoltaics Rehan Kapadia1,2 *, Zhibin-V photovoltaics (PVs) have demonstrated the highest power conversion efficiencies for both single- and multi times, and large equipment investments restrict applications to concentrated and space photovoltaics

California at Irvine, University of

25

Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint  

SciTech Connect

We report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. In CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.

Ullal, H. S.; von Roedern, B.

2007-09-01T23:59:59.000Z

26

Photovoltaic Single-Crystalline, Thin-Film Cell Basics | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Single-Crystalline, Thin-Film Cell Basics Single-Crystalline, Thin-Film Cell Basics Photovoltaic Single-Crystalline, Thin-Film Cell Basics August 20, 2013 - 2:50pm Addthis Single-crystalline thin films are made from gallium arsenide (GaAs), a compound semiconductor that is a mixture of gallium and arsenic. Gallium arsenide (GaAs) is a compound semiconductor, a mixture of gallium and arsenic. Gallium is a byproduct of the smelting of other metals, notably aluminum and zinc, and it is rarer than gold. Arsenic is not rare, but it is poisonous. Gallium arsenide has been developed for use in solar cells at about the same time that it has been developed for light-emitting diodes, lasers, and other electronic devices that use light. GaAs solar cells offer several benefits: The GaAs bandgap is 1.43 eV-nearly ideal for single-junction solar

27

Adaptation of thin-film photovoltaic technology for use in space  

SciTech Connect

The anticipated deployment of large numbers of satellites in low earth orbit (LEO) for global telecommunications networks renews interest in producing solar power systems that are lightweight, robust, resistant to radiation damage, and relatively inexpensive. Promising near term thin-film candidates are amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). The authors discuss the modifications that are necessary to adapt terrestrial thin-film technology for use in space. The authors characterize expected module performance and present results of tests performed on sample cells. They consider the possibility of achieving aggressive cost, weight, and performance targets through the use of thin-film photovoltaic (PV) technology.

Fairbanks, E.S.; Gates, M.T. [Boeing Commercial Space Co., Seattle, WA (United States)

1997-12-31T23:59:59.000Z

28

Photovoltaic effect in transition metal modified polycrystalline BiFeO3 thin films  

Science Journals Connector (OSTI)

We report photovoltaic (PV) effect in multiferroic Bi0.9Sm0.1Fe0.95Co0.05O3 (BSFCO) thin films. Transition metal modified polycrystalline BiFeO3 (BFO) thin films have been deposited on Pt/TiO2/SiO2/Si substrate successfully through pulsed laser deposition (PLD). PV response is observed under illumination both in sandwich and lateral electrode configurations. The open-circuit voltage (Voc) and the short-circuit current density (Jsc) of the films in sandwich electrode configuration under illumination are measured to be 0.9 V and ?0.051 µA cm?2. Additionally, we report piezoresponse for BSFCO films, which confirms ferroelectric piezoelectric behaviour.

Venkata Sreenivas Puli; Dhiren Kumar Pradhan; Rajesh Kumar Katiyar; Indrani Coondoo; Neeraj Panwar; Pankaj Misra; Douglas B Chrisey; J F Scott; Ram S Katiyar

2014-01-01T23:59:59.000Z

29

High efficiency thin-film multiple-gap photovoltaic device  

DOE Patents (OSTI)

A photovoltaic device includes at least two solar cells made from Group IV elements or their alloys in the amorphous state mounted on a substrate. The outermost or first cell has a larger bandgap than the second cell. Various techniques are utilized to improve the efficiency of the device.

Dalal, Vikram L. (Newark, DE)

1983-01-01T23:59:59.000Z

30

Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe  

SciTech Connect

The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.

Gessert, T. A.

2012-01-01T23:59:59.000Z

31

Metastable Changes to the Temperature Coefficients of Thin-Film Photovoltaic Modules  

SciTech Connect

Transient changes in the performance of thin-film modules with light exposure are a well-known and widely reported phenomenon. These changes are often the result of reversible metastabilities rather than irreversible changes. Here we consider how these metastable changes affect the temperature dependence of photovoltaic performance. We find that in CIGS modules exhibiting a metastable increase in performance with light exposure, the light exposure also induces an increase in the magnitude of the temperature coefficient. It is important to understand such changes when characterizing temperature coefficients and when analyzing the outdoor performance of newly installed modules.

Deceglie, M. G.; Silverman, T. J.; Marion, B.; Kurtz, S. R.

2014-07-01T23:59:59.000Z

32

Opportunities for thin film photovoltaics in Building Integrated photovoltaics (BIPV)with a focus on Australia.  

E-Print Network (OSTI)

??Building Integrated Photovoltaic (BIPV) products can not only generate electricity but also provide structural stability, thermal insulation, shading, natural lighting, protection from water and other… (more)

Tominaga, Miwa

2009-01-01T23:59:59.000Z

33

The research field of thin-film photovoltaics of the department of energy-and semiconductor research (EHF) of the institute of physics at the Carl-von-Ossietzky University of Oldenburg  

E-Print Network (OSTI)

The research field of thin-film photovoltaics of the department of energy- and semiconductor and calibration of an optical simulation for thin-film solar cells In recent years, the photovoltaic has become is necessary to let photovoltaic remain economical attractive. Thin-film solar cells on basis of Cu(In,Ga)Se2

Peinke, Joachim

34

Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint  

SciTech Connect

The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

2011-09-01T23:59:59.000Z

35

Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module  

SciTech Connect

We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

2013-06-01T23:59:59.000Z

36

Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization  

E-Print Network (OSTI)

Research, Thin-Film Photovoltaic (PV) Cells Market Analysiscost of photovoltaic systems (such as solar cells) due tosolar cells are created by depositing layers of photovoltaic

Bielecki, Anthony

2013-01-01T23:59:59.000Z

37

Lessons Learned from the Photovoltaic Manufacturing Technology/PV Manufacturing R&D and Thin Film PV Partnership Projects  

SciTech Connect

As the U.S. Department of Energy's (DOE's) Solar Energy Technologies Program initiates new cost-shared solar energy R&D under the Solar America Initiative (SAI), it is useful to analyze the experience gained from cost-shared R&D projects that have been funded through the program to date. This report summarizes lessons learned from two DOE-sponsored photovoltaic (PV) projects: the Photovoltaic Manufacturing Technology/PV Manufacturing R&D (PVMaT/PVMR&D) project and the Thin-Film PV Partnership project. During the past 10-15 years, these two projects have invested roughly $330 million of government resources in cost-shared R&D and leveraged another $190 million in private-sector PV R&D investments. Following a description of key findings and brief descriptions of the PVMaT/PVMR&D and Thin-Film PV Partnership projects, this report presents lessons learned from the projects.

Margolis, R.; Mitchell, R.; Zweibel, K.

2006-09-01T23:59:59.000Z

38

The Effects of Non-Uniform Electronic Properties on Thin Film Photovoltaics  

E-Print Network (OSTI)

World  Conf.  Photovoltaic   Energy  Conversion  (2003),  Conference  on  Photovoltaic  Energy  Conversion,  May  17 th  European  Photovoltaic  Solar  Energy  Conference,  

Brown, Gregory Ferguson

2011-01-01T23:59:59.000Z

39

In-Line Post-Process Scribing for Reducing Cell to Module Efficiency Gap in Monolithic Thin Film Photovoltaics  

E-Print Network (OSTI)

The gap between cell and module efficiency is a major challenge for all photovoltaic (PV) technologies. For monolithic thin film PV modules, a significant fraction of this gap has been attributed to parasitic shunts, and other defects, distributed across the module. In this paper, we show that it is possible to contain or isolate these shunt defects, using the state of the art laser scribing processes, after the fabrication of the series connected module is finished. We discuss three possible alternatives, and quantify the performance gains for each technique. We demonstrate that using these techniques, it is possible to recover up to 50% of the power lost to parasitic shunts, which results in 1-2% (absolute) increase in module efficiencies for typical thin film PV technologies.

Dongaonkar, Sourabh

2013-01-01T23:59:59.000Z

40

Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems  

E-Print Network (OSTI)

microcrystalline- silicon photovoltaic cell, B) range ofpayback of roof mounted photovoltaic cells. Boustead, I. andmicrocrystalline-silicon photovoltaic cell, B) range of

Zhang, Teresa Weirui

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems  

E-Print Network (OSTI)

21st European Photovoltaic Solar Energy Conference, Dresden,21st European Photovoltaic Solar Energy Conference, Dresden,International Energy Agency Photovoltaic Power System

Zhang, Teresa Weirui

2011-01-01T23:59:59.000Z

42

The Effects of Non-Uniform Electronic Properties on Thin Film Photovoltaics  

E-Print Network (OSTI)

Third   Generation  Photovoltaics:  Advanced  Solar  R.   Noufi,  Prog.  Photovoltaics  16,  235-­?239  (2008).  M.  Green,  Prog.  Photovoltaics  17,  183-­?189  (2009).  

Brown, Gregory Ferguson

2011-01-01T23:59:59.000Z

43

Investigation of Solar Energy Transfer through Plasmonic Au Nanoparticle-doped Sol-derived TiO? Thin Films in Photocatalysis and Photovoltaics /  

E-Print Network (OSTI)

in Photocatalysis and Photovoltaics A Thesis submitted inFilms in Photocatalysis and Photovoltaics by Andrew Zelinskiinvestigated for use in photovoltaics and as photocatalysts,

Zelinski, Andrew

2013-01-01T23:59:59.000Z

44

Method for making photovoltaic devices using oxygenated semiconductor thin film layers  

DOE Patents (OSTI)

A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

Johnson, James Neil; Albin, David Scott; Feldman-Peabody, Scott; Pavol, Mark Jeffrey; Gossman, Robert Dwayne

2014-12-16T23:59:59.000Z

45

Predictive Modeling for Glass-Side Laser Scribing of Thin Film Photovoltaic Cells  

E-Print Network (OSTI)

:F, CdTe, solar cell INTRODUCTION Thin-film solar cell is a promising technology to achieve in a large-area solar cell. Quality of such scribing contributes to the overall quality and efficiency of the solar cell and therefore predictive capabilities of the process are essential. Limited numerical work

Yao, Y. Lawrence

46

Development of tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar panels with reflective layer and 4-step laser scribing for building-integrated photovoltaic applications  

Science Journals Connector (OSTI)

In this work, tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar modules were successfully designed and developed for building-integrated photovoltaic applications. Novel and key technologies of reflective layers and ...

Chin-Yi Tsai, Chin-Yao Tsai

2014-01-01T23:59:59.000Z

47

Photovoltaic property of bismuth ferrite thin films and its application in non-volatile memory.  

E-Print Network (OSTI)

??In conventional junction-based photovoltaic cells, the photovoltage is usually smaller than the semiconductor band gap, due to the limitation of the energy barrier at the… (more)

Guo, Rui.

2013-01-01T23:59:59.000Z

48

Processing Materials Devices and Diagnostics for Thin Film Photovoltaics: Fundamental and Manufacturability Issues; Final Report, 5 September 2001 - 31 May 2008  

NLE Websites -- All DOE Office Websites (Extended Search)

20-45545 20-45545 April 2009 Processing Materials Devices and Diagnostics for Thin Film Photovoltaics: Fundamental and Manufacturability Issues Final Report 1 March 2005 - 30 November 2008 R.W. Birkmire, W.N. Shafarman, E. Eser, S.S. Hegedus, B.E. McCandless, K.D. Dobson, and S. Bowden University of Delaware Newark, Delaware National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, Colorado 80401-3393 303-275-3000 * www.nrel.gov NREL is a national laboratory of the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy Operated by the Alliance for Sustainable Energy, LLC Contract No. DE-AC36-08-GO28308 Subcontract Report NREL/SR-520-45545 April 2009 Processing Materials Devices and Diagnostics for Thin Film Photovoltaics: Fundamental and

49

Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems  

E-Print Network (OSTI)

cycle impacts and costs of photovoltaic systems: currentcosts: 2004early 2005 status. Progress in Photovoltaicphotovoltaic systems often do not consider panel installation, even though it is a major component of their financial cost.

Zhang, Teresa Weirui

2011-01-01T23:59:59.000Z

50

High-throughput manufacturing of thin-film CdTe photovoltaic modules  

Science Journals Connector (OSTI)

The main obstacle to the wide spread use of photovoltaics as a major source of renewable energy has been cost. The key to lowering the cost of photovoltaic generated energy to the levels of conventional sources of energy lays in the development of low cost high throughput manufacturing processes. Solar Cells Inc. (SCI) believes this can be achieved for CdTe based modules by integrating its PV fabrication processes with a modern glass plant. That is sand in finished module out. It is also necessary to have a stable end product in order to gain wide acceptance. SCI has been working at producing large-area CdS/CdTe photovoltaic (PV) modules and the processes developed at SCI can be scaled to achieve high production levels at cost-effective rates.

Alan McMaster; Steve Johnson

1999-01-01T23:59:59.000Z

51

Nanostructured columnar heterostructures of TiO2 and Cu2O enabled by a thin-film self-assembly approach: Potential for photovoltaics  

SciTech Connect

Significant efforts are being devoted to the development of semiconductor thin film and nanostructured material architectures as components of solar energy harvesting and conversion devices. In particular, nanostructured assemblies with well-defined geometrical shapes have emerged as possible highly efficient and economically viable alternatives to planar junction thin film architectures , , , . However, fabrication of inorganic nanostructures generally requires complicated and multiple step processing techniques, making them less suitable for large-scale manufacturing. Hence, innovative cell architectures and materials processing schemes are essential to large-scale integration and practical viability in photovoltaic devices. Here we present here a new approach towards nanostructured thin film solar cells, by exploiting phase-separated self-assembly , . Through a single-step deposition by rf magnetron sputtering, we demonstrate growth of an epitaxial, composite film matrix formed as self-assembled, well ordered, phase segregated, and oriented p-n type interfacial nanopillars of Cu2O and TiO2. The composite films were structurally characterized to atomic resolution by a variety of analytical tools, and evaluated for preliminary optical properties using absorption measurements. We find nearly atomically distinct Cu2O-TiO2 interfaces (i.e. a p-n junction), and an absorption profile that captures a wide range of the solar spectrum extending from ultraviolet to visible wavelengths. This work opens a novel avenue for development of simple and cost-effective optically active thin film architectures, and offers promise for significantly increased photovoltaic device efficiencies using nanostructured cells that can be optimized for both incident light absorption and carrier collection.

Polat, Ozgur [ORNL; Aytug, Tolga [ORNL; Lupini, Andrew R [ORNL; Paranthaman, Mariappan Parans [ORNL; Ertugrul, Memhet [Ataturk University; Bogorin, Daniela Florentina [ORNL; Meyer III, Harry M [ORNL; Wang, Wei [ORNL; Pennycook, Stephen J [ORNL; Christen, David K [ORNL

2013-01-01T23:59:59.000Z

52

Thin film photovoltaic cells having increased durability and operating life and method for making same  

DOE Patents (OSTI)

A solar cell having a copper-bearing absorber is provided with a composite transparent encapsulating layer specifically designed to prevent oxidation of the copper sulfide. In a preferred embodiment, the absorber is a layer of copper sulfide and the composite layer comprises a thin layer of copper oxide formed on the copper sulfide and a layer of encapsulating glass formed on the oxide. It is anticipated that such devices, when exposed to normal operating conditions of various terrestrial applications, can be maintained at energy conversion efficiencies greater than one-half the original conversion efficiency for periods as long as thirty years.

Barnett, Allen M. (Newark, DE); Masi, James V. (Wilmington, DE); Hall, Robert B. (Newark, DE)

1980-12-16T23:59:59.000Z

53

Apparatus and Method for Fabricating Thin Film Devices using...  

NLE Websites -- All DOE Office Websites (Extended Search)

method for manufacturing thin-films was developed specifically for fabrication of CdSCdTe photovoltaic modules. However, this innovation should perform excellently for any...

54

Epitaxial growth of CdTe oriented thin films, infrared characterization and possible applications to photo-voltaic cells  

E-Print Network (OSTI)

573 Epitaxial growth of CdTe oriented thin films, infrared characterization and possible décembre 1979, accepté le 12 décembre 1979) Résumé. 2014 Des films minces orientés de CdTe, d de CdTe cubique dont la face (111), polie mécaniquement et décapée chimiquement, est préalablement

Paris-Sud XI, Université de

55

Understanding how processing additives tune nanoscale morphology of high efficiency organic photovoltaic blends: From casting solution to spun-cast thin film  

SciTech Connect

Adding a small amount of a processing additive to the casting solution of organic blends has been demonstrated to be an effective method for achieving improved power conversion efficiency (PCE) in organic photovoltaics (OPVs). However, an understanding of the nano-structural evolution occurring in the transformation from casting solution to thin photoactive films is still lacking. In this report, we investigate the effects of the processing additive diiodooctane (DIO) on the morphology of OPV blend of PBDTTT-C-T and fullerene derivative, PC71BM in a casting solution and in spun-cast thin films by using neutron/x-ray scattering, neutron reflectometry and other characterization techniques. The results reveal that DIO has no effect on the solution structures of PBDTTT-C-T and PC71BM. In the spun-cast films, however, DIO is found to promote significantly the molecular ordering of PBDTTT-C-T and PC71BM, and phase segregation, resulting in the improved PCE. Thermodynamic analysis based on Flory-Huggins theory provides a rationale for the effects of DIO on different characteristics of phase segregation as a solvent and due to evaporationg during the film formation. Such information may enable improved rational design of ternary blends to more consistently achieve improved PCE for OPVs.

Shao, Ming [ORNL; Keum, Jong Kahk [ORNL; Kumar, Rajeev [ORNL; Chen, Jihua [ORNL; Browning, Jim [ORNL; Chen, Wei [Argonne National Laboratory (ANL); Jianhui, Hou [Chinese Academy of Sciences (CAS), Institute of Chemistry; Do, Changwoo [ORNL; Littrell, Ken [ORNL; Sanjib, Das [University of Tennessee, Knoxville (UTK); Rondinone, Adam Justin [ORNL; Geohegan, David B [ORNL; Sumpter, Bobby G [ORNL; Xiao, Kai [ORNL

2014-01-01T23:59:59.000Z

56

Thin film photovoltaic cells  

DOE Patents (OSTI)

A solar cell has as its transparent electrical contact a grid made from a non-noble metal by providing a layer of copper oxide between the transparent electrical contact and the absorber-generator.

Rothwarf, Allen (Philadelphia, PA)

1981-01-01T23:59:59.000Z

57

Photovoltaic effect of a bilayer thin film with (Na0.5Bi0.5)1?xBaxTiO3/BiFeO3 heterostructure  

Science Journals Connector (OSTI)

A bilayer film containing (Na0.5Bi0.5)1?xBaxTiO3 (NBT–BT)/BiFeO3(BFO) heterostructure was produced by chemical solution deposition. An enhancement of photovoltaic performance of the bilayer film was discovered. It leads to a short circuit current density of 18.9 µA cm?2 and an open circuit voltage of 0.5 V, these values are much higher than that of BFO film. When transparent indium tin oxide (ITO) was used to substitute gold (Au) as top electrode, the photovoltaic voltage and photocurrent density, respectively, improved to ~0.71 V and ~45 µA cm?2. A theoretical band diagram model considering the ferroelectric polarization, heterostructure on the interface, and energy band bending effect was constructed to depict the mechanism of photovoltaic enhancement of the bilayer film. Temperature-dependent I–V measurements were carried out to explore the barrier height of the Au/BFO/NBT–BT/FTO heterostructure, and a total barrier height of 0.54 eV was obtained. Our work opens up a promising new method that has the potential for enhancing the photovoltaic performance for ferroelectric thin film, and provides deeper understanding of the photovoltaic mechanism of ferroelectric films.

Fen Wu; Yiping Guo; Bing Guo; Yangyang Zhang; Hua Li; Hezhou Liu

2013-01-01T23:59:59.000Z

58

DISSERTATION DEVICE CHARACTERIZATION OF CADMIUM TELLURIDE PHOTOVOLTAICS  

E-Print Network (OSTI)

DISSERTATION DEVICE CHARACTERIZATION OF CADMIUM TELLURIDE PHOTOVOLTAICS Submitted by Russell M Reserved #12;ABSTRACT DEVICE CHARACTERIZATION OF CADMIUM TELLURIDE PHOTOVOLTAICS Thin-film photovoltaics

Sites, James R.

59

Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study  

SciTech Connect

We report the fabrication of a thin film InAs/GaAs quantum dot solar cell (QD cell) by applying epitaxial lift-off (ELO) approach to the GaAs substrate. We confirmed significant current collection enhancement (?0.91?mA/cm{sup 2}) in the ELO-InAs QD cell within the wavelength range of 700?nm–900?nm when compared to the ELO-GaAs control cell. This is almost six times of the sub-GaAs bandgap current collection (?0.16?mA/cm{sup 2}) from the wavelength range of 900?nm and beyond, we also confirmed the ELO induced resonance cavity effect was able to increase the solar cell efficiency by increasing both the short circuit current and open voltage. The electric field intensity of the resonance cavity formed in the ELO film between the Au back reflector and the GaAs front contact layer was analyzed in detail by finite-differential time-domain (FDTD) simulation. We found that the calculated current collection enhancement within the wavelength range of 700?nm–900?nm was strongly influenced by the size and shape of InAs QD. In addition, we performed concentrated light photovoltaic study and analyzed the effect of intermediate states on the open voltage under varied concentrated light intensity for the ELO-InAs QD cell.

Sogabe, Tomah, E-mail: sogabe@mbe.rcast.u-tokyo.ac.jp; Shoji, Yasushi; Tamayo, Efrain; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8504 (Japan); Mulder, Peter; Schermer, John [Institute for Molecules and Materials, Radboud University Nijmegen, Heyendaalseweg 135, 6525 AJ Nijmegen (Netherlands)

2014-09-15T23:59:59.000Z

60

ThinFilms  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Films Thin Films Manufacturing Technologies The Thin Film laboratory provides a variety of vapor deposition processes and facilities for cooperative research and development. Available capabilities include electron beam evaporation, sputter deposition, reactive deposi- tion processes, atomic layer deposition (ALD) and specialized techniques such as focused ion beam induced chemical vapor deposition. Equipment can be reconfigured for prototyping, or it can be dedicated to long-term research, development and manufacturing. Most sputter and evaporative deposition systems are capable of depositing multiple materials. Deposition capabilities and expertise * Deposition of a large variety of thin film mate- rials * Multiple sputter deposition systems - Capable of depositing four materials in a

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Design, fabrication and optical characterization of photonic crystal assisted thin film monocrystalline-silicon solar cells  

Science Journals Connector (OSTI)

In this paper, we present the integration of an absorbing photonic crystal within a monocrystalline silicon thin film photovoltaic stack fabricated without epitaxy. Finite difference...

Meng, Xianqin; Depauw, Valérie; Gomard, Guillaume; El Daif, Ounsi; Trompoukis, Christos; Drouard, Emmanuel; Jamois, Cécile; Fave, Alain; Dross, Frédéric; Gordon, Ivan; Seassal, Christian

2012-01-01T23:59:59.000Z

62

Alta Devices Develops World Record Setting Thin-Film Solar Cell  

Office of Energy Efficiency and Renewable Energy (EERE)

EERE supported the development of Alta Devices' thin film Gallium Arsenide photovoltaic technology that set a world record for conversion efficiency.

63

Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)  

SciTech Connect

This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

Not Available

2013-06-01T23:59:59.000Z

64

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network (OSTI)

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

65

Thin film hydrogen sensor  

DOE Patents (OSTI)

A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

1999-03-23T23:59:59.000Z

66

Thin film hydrogen sensor  

DOE Patents (OSTI)

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

Cheng, Yang-Tse (Rochester Hills, MI); Poli, Andrea A. (Livonia, MI); Meltser, Mark Alexander (Pittsford, NY)

1999-01-01T23:59:59.000Z

67

Electrochromic-photovoltaic film for light-sensitive control of optical transmittance  

DOE Patents (OSTI)

A variable transmittance optical component includes an electrochromic material and a photovoltaic device-type thin film solar cell deposited in a tandem type, monolithic single coating over the component. A bleed resistor of a predetermined value is connected in series across the electrochromic material and photovoltaic device controlling the activation and deactivation of the electrochromic material. The electrical conductivity between the electrochromic material and the photovoltaic device is enhanced by interposing a transparent electrically conductive layer.

Branz, Howard M. (Boulder, CO); Crandall, Richard S. (Golden, CO); Tracy, C. Edwin (Golden, CO)

1994-01-01T23:59:59.000Z

68

Electrochromic-photovoltaic film for light-sensitive control of optical transmittance  

DOE Patents (OSTI)

A variable transmittance optical component includes an electrochromic material and a photovoltaic device-type thin film solar cell deposited in a tandem type, monolithic single coating over the component. A bleed resistor of a predetermined value is connected in series across the electrochromic material and photovoltaic device controlling the activation and deactivation of the electrochromic material. The electrical conductivity between the electrochromic material and the photovoltaic device is enhanced by interposing a transparent electrically conductive layer. 5 figures.

Branz, H.M.; Crandall, R.S.; Tracy, C.E.

1994-12-27T23:59:59.000Z

69

Integrated optical and electrical modeling of plasmon-enhanced thin film photovoltaics: A case-study on organic devices  

SciTech Connect

The nanoscale light control for absorption enhancement of organic photovoltaic (OPV) devices inevitably produces strongly non-uniform optical fields. These non-uniformities due to the localized optical modes are a primary route toward absorption enhancement in OPV devices. Therefore, a rigorous modeling tool taking into account the spatial distribution of optical field and carrier generation is necessary. Presented here is a comprehensive numerical model to describe the coupled optical and electrical behavior of plasmon-enhanced polymer:fullerene bulk heterojunction (BHJ) solar cells. In this model, a position-dependent electron-hole pair generation rate that could become highly non-uniform due to photonic nanostructures is directly calculated from the optical simulations. By considering the absorption and plasmonic properties of nanophotonic gratings included in two different popular device architectures, and applying the Poisson, current continuity, and drift/diffusion equations, the model predicts quantum efficiency, short-circuit current density, and desired carrier mobility ratios for bulk heterojunction devices incorporating nanostructures for light management. In particular, the model predicts a significant degradation of device performance when the carrier species with lower mobility are generated far from the collecting electrode. Consequently, an inverted device architecture is preferred for materials with low hole mobility. This is especially true for devices that include plasmonic nanostructures. Additionally, due to the incorporation of a plasmonic nanostructure, we use simulations to theoretically predict absorption band broadening of a BHJ into energies below the band gap, resulting in a 4.8% increase in generated photocurrent.

Rourke, Devin [Department of Physics, University of Colorado, Boulder, Colorado 80309-0390 (United States); Ahn, Sungmo [Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309-0425 (United States); Nardes, Alexandre M.; Lagemaat, Jao van de; Kopidakis, Nikos [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401 (United States); Park, Wounjhang, E-mail: won.park@colorado.edu [Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309-0425 (United States); Materials Science and Engineering Program, University of Colorado, Boulder, Colorado 80303 (United States)

2014-09-21T23:59:59.000Z

70

Photovoltaic effect and enhanced magnetization in 0.9(BiFeO3)–0.1(YCrO3) composite thin film fabricated using sequential pulsed laser deposition  

Science Journals Connector (OSTI)

We report on the photovoltaic effect and multiferroic properties of a 0.9(BiFeO3)–0.1(YCrO3) composite thin film deposited on a Pt/TiO2/SiO2/Si substrate by sequential ablation of BiFeO3 and YCrO3 ceramic targets using pulsed laser deposition. The desired composition of the composite was achieved by controlling the ablation time of respective targets. As confirmed by the x-ray diffraction pattern the resultant film was found to be polycrystalline in nature and composed of a mixture of both rhombohedral BiFeO3 and orthorhombic YCrO3 phases. Interesting multiferroic properties in terms of an enhanced saturation magnetization of ~14 emu cm?3 and the remnant polarization of ~4.5 µC cm?2 were observed where the enhancement in magnetization as compared to pristine BiFeO3 could be attributed to the super-exchange interaction between Fe and Cr-ions. The photovoltaic properties of the composite thin film were studied under white light illumination in both top–bottom and lateral electrode configurations. Short circuit current densities (JSC) = 1.48 µA cm?2 and 0.44 µA cm?2, and open circuit voltages (VOC) = 0.51 V and 0.32 V were observed in top–bottom and lateral electrode configurations, respectively.

Yogesh Sharma; Pankaj Misra; Rajesh K Katiyar; Ram S Katiyar

2014-01-01T23:59:59.000Z

71

Investigation of Solar Energy Transfer through Plasmonic Au Nanoparticle-doped Sol-derived TiO? Thin Films in Photocatalysis and Photovoltaics /  

E-Print Network (OSTI)

solar-to-fuel and photovoltaic energy conversion through TiOplasmonic photovoltaic and photocatalytic energy transferto-fuel energy conversion or photovoltaic applications. The

Zelinski, Andrew

2013-01-01T23:59:59.000Z

72

Nanopillar Photovoltaics: Photon Management and Junction Engineering for Next-Generation Solar Cells  

E-Print Network (OSTI)

for efficient photovoltaic cells, Nat. Nanotechnol. 6, 568-for efficient photovoltaic cells, Nat. Nanotechnol. 6, 568-trapping in thin-film photovoltaic cells, Opt. Express 8,

Mariani, Giacomo

2013-01-01T23:59:59.000Z

73

Low-Cost Photovoltaics: Luminescent Solar Concentrators And Colloidal Quantum Dot Solar Cells  

E-Print Network (OSTI)

using front-facing photovoltaic cell luminescent solarwith front-facing photovoltaic cells using weighted Montefor tandem photovoltaic cells,” Thin Solid Films, vol. 516,

Leow, Shin Woei

2014-01-01T23:59:59.000Z

74

Earth-abundant semiconductors for photovoltaic applications ...  

NLE Websites -- All DOE Office Websites (Extended Search)

Earth-abundant semiconductors for photovoltaic applications Thin film photovoltaics (solar cells) has the potential to revolutionize our energy landscape by producing clean,...

75

Nanocauliflower like structure of CdS thin film for solar cell photovoltaic applications: In situ tin doping by chemical bath deposition technique  

Science Journals Connector (OSTI)

Abstract We report on surface morphology changes of in situ tin (Sn) doped cadmium sulphide (CdS) thin film nanostructures prepared on a glass substrate using the chemical bath deposition (CBD) technique. Sn-doping in the presence of triethanolammine (TEOA) as complexing agent resulted in the formation of nanocauliflower like structure of CdS thin film. X-ray diffraction (XRD) results indicated that Sn-doped CdS thin films show a hexagonal structure with a preferential orientation growth along the c-axis (0 0 2). The Sn4+ doping markedly influenced on the evolution of the CdS nanostructures, resulting in the formation of nanocracks due to the substitution of Cd2+ ions by larger-than-host Sn4+ ions as well as a drastic increase in electrical conductivity. An improved optical transmittance property was also achieved by the Sn-doping with no considerable change in the energy band gap. Moreover, a large improvement in both electrical conductivity and photosensitivity observed in the Sn-doped CdS thin films suggests that Sn-doping is highly effective for applications as window/buffer layers in future solar cell applications. Structural evolution of cauliflower like nanostructures are also discussed in this paper.

K.C. Wilson; E. Manikandan; M. Basheer Ahamed; B.W. Mwakikunga

2014-01-01T23:59:59.000Z

76

NMR characterization of thin films  

DOE Patents (OSTI)

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

Gerald, II, Rex E. (Brookfield, IL); Klingler, Robert J. (Glenview, IL); Rathke, Jerome W. (Homer Glen, IL); Diaz, Rocio (Chicago, IL); Vukovic, Lela (Westchester, IL)

2008-11-25T23:59:59.000Z

77

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making  

DOE Patents (OSTI)

A photovoltaic device is disclosed having a substrate, a layer of Cd[sub 2]SnO[sub 4] disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd[sub 2]SnO[sub 4], and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd[sub 2]SnO[sub 4] layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd[sub 2]SnO[sub 4], and depositing an electrically conductive film onto the thin film of semiconductor materials. 10 figs.

Wu, X.; Coutts, T.J.; Sheldon, P.; Rose, D.H.

1999-07-13T23:59:59.000Z

78

NREL: Photovoltaics Research - Emerging Technologies Engineering...  

NLE Websites -- All DOE Office Websites (Extended Search)

and the potential benefit of increasing system efficiency. Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

79

Photovoltaic properties of ferroelectric solar cells based on polycrystalline BiFeO3 films sputtered on indium tin oxide substrates  

Science Journals Connector (OSTI)

To study the ferroelectric photovoltaic effect based on polycrystalline films, preparation of...3 (BFO) thin films with extremely large remnant polarization (2P r = 180 C/cm2...) were successfully d...

JianNing Ding; MengJiao Chen; JianHua Qiu…

2014-08-01T23:59:59.000Z

80

NREL: Photovoltaics Research - News  

NLE Websites -- All DOE Office Websites (Extended Search)

For archived editions of the NCPV Hotline. See also PV events. Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

NREL: Photovoltaics Research - Webmaster  

NLE Websites -- All DOE Office Websites (Extended Search)

reply. Your name: Your email address: Your message: Send Message Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

82

Synthesis of thin films and materials utilizing a gaseous catalyst  

DOE Patents (OSTI)

A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

2013-10-29T23:59:59.000Z

83

Modeling and control of thin film surface morphology: application to thin film solar cells  

E-Print Network (OSTI)

materials, thin film solar cell technology stands to benefitThin-film solar cells: Review of materials, technologies and

Huang, Jianqiao

2012-01-01T23:59:59.000Z

84

Thin film hydrogen sensor  

DOE Patents (OSTI)

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

Lauf, Robert J. (Oak Ridge, TN); Hoffheins, Barbara S. (Knoxville, TN); Fleming, Pamela H. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

85

Development of CdTe thin film solar cells on flexible foil substrates.  

E-Print Network (OSTI)

??Cadmium telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal band gap of 1.45 eV, its high optical absorption… (more)

Hodges, Deidra Ranel

2009-01-01T23:59:59.000Z

86

CdTe/CdS Thin Film Solar Cells Fabricated on Flexible Substrates.  

E-Print Network (OSTI)

??Cadmium Telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal bandgap of 1.45 eV and its high optical absorption… (more)

Palekis, Vasilios

2011-01-01T23:59:59.000Z

87

Electron-reflector strategy for CdTe thin-film solar cells.  

E-Print Network (OSTI)

??The CdTe thin-film solar cell has a large absorption coefficient and high theoretical efficiency. Moreover, large-area photovoltaic panels can be economically fabricated. These features potentially… (more)

Hsiao, Kuo-Jui

2010-01-01T23:59:59.000Z

88

Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)  

SciTech Connect

Capabilities fact sheet for the National Center for Photovoltaics: Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide that includes scope, core competencies and capabilities, and contact/web information.

Not Available

2011-06-01T23:59:59.000Z

89

Hybrid Thin Film Deposition System | EMSL  

NLE Websites -- All DOE Office Websites (Extended Search)

Hybrid Thin Film Deposition System Hybrid Thin Film Deposition System Only available at EMSL, the Discovery Deposition System has been customized to be a fully automated...

90

Thin Film Solar Technologies | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Name: Thin Film Solar Technologies Place: South Africa Product: Producers of thin-film copper, indium, gallium, sulphur, selenium modules....

91

Photovoltaic cell with thin CS layer  

DOE Patents (OSTI)

An improved photovoltaic panel and method of forming a photovoltaic panel are disclosed for producing a high efficiency CdS/CdTe photovoltaic cell. The photovoltaic panel of the present invention is initially formed with a substantially thick Cds layer, and the effective thickness of the CdS layer is substantially reduced during regrowth to both form larger diameter CdTe crystals and substantially reduce the effective thickness of the C This invention was made with Government support under Subcontract No. ZL-7-06031-3 awarded by the Department of Energy. The Government has certain rights in this invention.

Jordan, John F. (El Paso, TX); Albright, Scot P. (El Paso, TX)

1994-01-18T23:59:59.000Z

92

CFN | Thin Films Group  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Synthesis and Characterization Facility Materials Synthesis and Characterization Facility Thin-Film Processing Facility Online Manager (FOM) website FOM manual ESR for lab 1L32 (High-Resolution SEM and x-ray microanalysis) CFN Operations Safety Awareness (COSA) form for 1L32 (ESR #1) Technical article on LABE detector (Analytical SEM) Request form for off-hours access (.doc, First time only, renewals done via email) Lab Tool capabilities Primary contact Training schedule Backup contact Booking calendar Booking rules SOP 1L32 Analytical SEM Camino Thurs 10-12 PM Stein FOM yes yes Hitachi S-4800 SEM Stein Tues 1-3 PM Black FOM no yes booking calendar: yes = need to reserve tool time in calendar before using tool booking rules: yes = specific rules exist for reserving tool time SOP = standard operating procedure (basic instructions)

93

Ferromagnetic thin films  

DOE Patents (OSTI)

A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

Krishnan, K.M.

1994-12-20T23:59:59.000Z

94

NREL: Photovoltaics Research - NCPV Hotline  

NLE Websites -- All DOE Office Websites (Extended Search)

| April-June | July-September | October-December Annual Index Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

95

Transfer Printing Methods for Flexible Thin Film Solar Cells: Basic Concepts and Working Principles  

Science Journals Connector (OSTI)

Thin film solar cells (TFSCs) that are fabricated on flexible substrates, such as plastics, paper, and fabrics, will significantly broaden the applications of solar cells, ranging from wearable solar chargers for portable electronics, building-integrated photovoltaics on sidewalls and curved rooftops, to lightweight solar cells for aerospace and space applications. ... Our study shows that photovoltaic tiles can combine energy generation with architectural aesthetics leading to significant implications for advancement in building integrated photovoltaics. ...

Chi Hwan Lee; Dong Rip Kim; Xiaolin Zheng

2014-09-03T23:59:59.000Z

96

22nd European Photovoltaic Solar Energy Conference, Milan, 3-7 September 2007 Cu(InGa)Se2 THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

be evaluated throughout the entire life cycle of the CdS, and also of alternative buffer layers. Based on data National Photovoltaic EH&S Research Center Brookhaven National Laboratory Upton, NY 11973, USA ABSTRACT that the Cd emissions from the buffer layers are minimal compared to the upstream emissions from fossil-fuel

97

Thin-film Lithium Batteries  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin-Film Battery with Lithium Anode Courtesy of Oak Ridge National Laboratory, Materials Science and Technology Division Thin-Film Lithium Batteries Resources with Additional Information The Department of Energy's 'Oak Ridge National Laboratory (ORNL) has developed high-performance thin-film lithium batteries for a variety of technological applications. These batteries have high energy densities, can be recharged thousands of times, and are only 10 microns thick. They can be made in essentially any size and shape. Recently, Teledyne licensed this technology from ORNL to make batteries for medical devices including electrocardiographs. In addition, new "textured" cathodes have been developed which have greatly increased the peak current capability of the batteries. This greatly expands the potential medical uses of the batteries, including transdermal applications for heart regulation.'

98

Advanced polycrystalline silicon thin film solar cells using high rate plasma enhanced chemical vapour deposited amorphous silicon on textured glass.  

E-Print Network (OSTI)

??Solid phase crystallized polycrystalline silicon (poly-Si) thin-film solar cell on glass is an emerging Photovoltaics (PV) technology combining the robustness of crystalline Si material with… (more)

Jin, Guangyao

2010-01-01T23:59:59.000Z

99

Low work function, stable thin films  

DOE Patents (OSTI)

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

2000-01-01T23:59:59.000Z

100

Vertically Aligned Nanocomposite Thin Films  

E-Print Network (OSTI)

nanocomposite oxides have attracted extensive research interest. Nanocomposites consist of nanosized particles embedded in different materials matrix.8 In recent years, high quality nanocrystalline materials have shown novel physical, chemical, magnetic....................................... 9 1.2.3 Physical properties of oxide thin films........................ 12 1.2.3.1 Electrical and optical properties................. 13 1.2.3.2 Magnetism and magnetotransport properties...

Bi, Zhenxing

2012-07-16T23:59:59.000Z

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Thin Solid Films 430 (2003) 125129 0040-6090/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved.  

E-Print Network (OSTI)

for a-Si:H solar cell fabrication. In addition to photovoltaic applications, a-Si:H is also used of amorphous silicon (a-Si:H)-based photovoltaic devices, it is important to deposit high- quality a progress has been made in hydrogenated amorphous silicon (a-Si:H)-based thin film photovoltaic devices

Deng, Xunming

102

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Program Manager, Solar Program Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be using technology pioneered at the Department of Energy's National Renewable Energy Lab (NREL). The record-breaking Cadmium-Telluride (CdTe) thin film photovoltaic technology GE has chosen for its solar panels was originally developed more than a decade ago by a team of scientists led by NREL's Xuanzhi Wu, and

103

Thin film buried anode battery  

DOE Patents (OSTI)

A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

Lee, Se-Hee (Lakewood, CO); Tracy, C. Edwin (Golden, CO); Liu, Ping (Denver, CO)

2009-12-15T23:59:59.000Z

104

Polycrystalline?thin?film thermophotovoltaic cells  

Science Journals Connector (OSTI)

Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity portability silent operation absence of moving parts reduced air pollution rapid start?up high power densities potentially high conversion efficiencies choice of a wide range of heat sources employing fossil fuels biomass and even solar radiation are key advantages of TPV cells in comparison with fuel cells thermionic and thermoelectric convertors and heat engines. The potential applications of TPV systems include: remote electricity supplies transportation co?generation electric?grid independent appliances and space aerospace and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000–2000 K) black?body or selective radiators is in the 0.5–0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1?x Ga x As GaSb and Ga1?x In x Sb. Several polycrystalline thin films such as Hg1?x Cd x Te Sn1?x Cd2x Te2 and Pb1?x Cd x Te etc. have great potential for economic large?scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells e.g. 17.1% for CuIn1?x Ga x Se2 and 15.8% for CdTe. The best recombination?state density N t is in the range of 10?15–10?16 cm?3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences possibility of bandgap tailoring and use of selective emitters such as rare earth oxides (erbia holmia yttria) and rare earth?yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto?electronic (infrared detectors lasers and optical communications) technologies. Low bandgaps and larger fluences employed in TPV cells result in very high current densities which make it difficult to collect the current effectively. Techniques for laser and mechanical scribing integral interconnection and multi?junction tandem structures which have been fairly well developed for thin?film PV solar cells could be further refined for enhancing the voltages from TPV modules. Thin?film TPV cells may be deposited on metals or back?surface reflectors. Spectral control elements such as indium?tin oxide or tin oxide may be deposited directly on the TPV convertor. It would be possible to reduce the cost of TPV technologies based on single?crystal materials being developed at present to the range of US$ 2–5 per watt so as to be competitive in small to medium size commercial applications. However a further cost reduction to the range of US ¢ 35–$ 1 per watt to reach the more competitive large?scale residential consumer and hybrid?electric car markets would be possible only with the polycrystalline?thin film TPV cells.

Neelkanth G. Dhere

1996-01-01T23:59:59.000Z

105

Zinc oxide thin film acoustic sensor  

SciTech Connect

This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah [Department of Physics , College of Science, Al-Mustansiriyah University, Baghdad (Iraq); Mansour, Hazim Louis [Department of Physics , College of Education, Al-Mustansiriyah University, Baghdad (Iraq)

2013-12-16T23:59:59.000Z

106

Ceramic Thin Films: Fabrication and Applications  

Science Journals Connector (OSTI)

...SPRAYED CERAMIC COATING, JOURNAL...PB1-XCAXTIO3 THIN-FILM GROWN BY...ELECTRICAL, OPTICAL, AND ELECTRO-OPTIC...fabrication and applications. | Ceramics...controlled optical switches...Ceramic coatings ofalumina...modified by the application of mechanical...material as a thin film cannot only...successive coatings. Although...respect to CVD that the...purposes. Applications of Thin Film Ceramics...

M. Sayer; K. Sreenivas

1990-03-02T23:59:59.000Z

107

Plasmonic Thin-Film Solar Cells  

Science Journals Connector (OSTI)

A combined computational-experimental study optimizing plasmon-enhanced absorption in thin film solar cells presented. We investigate the effect of different geometries where...

Pala, Ragip; White, Justin; Brongersma, Mark

108

Thin film solar energy collector  

DOE Patents (OSTI)

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

1983-11-22T23:59:59.000Z

109

Organic thin film prehistory: looking towards solution phase aggregation |  

NLE Websites -- All DOE Office Websites (Extended Search)

Organic thin film prehistory: looking towards solution phase aggregation Organic thin film prehistory: looking towards solution phase aggregation Wednesday, November 6, 2013 - 3:00pm SLAC, Redtail Hawk Conference Room 108A Christopher Tassone, SSRL Polymer bulk heterojunction (BHJ) solar cells have attracted significant attention in industry and academia because of their potential for achieving large-area, light-weight, and flexible photovoltaic devices through cost-effective solution deposition techniques. These devices consist of a blend of an absorbing polymer and an electron accepting fullerene, the molecular packing and phase segregation of which heavily influence power conversion efficiency by effecting important processes such as exciton splitting, charge transport, and recombination. Understanding and utilization of molecular interactions to predicatively control the

110

Thin-Film Reliability Trends Toward Improved Stability  

SciTech Connect

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (R{sub d}) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2 {+-} 0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-01-01T23:59:59.000Z

111

Thin-Film Reliability Trends Toward Improved Stability: Preprint  

SciTech Connect

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (Rd) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2+/-0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-07-01T23:59:59.000Z

112

NREL: Photovoltaics Research - NREL Releases User Guide for PV...  

NLE Websites -- All DOE Office Websites (Extended Search)

firing signals, or other events in the power electronics domain. Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

113

NREL: Photovoltaics Research - Sarah Kurtz, Ph.D.  

NLE Websites -- All DOE Office Websites (Extended Search)

NREL Publications View NREL publications for this staff member. Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

114

NREL: Photovoltaics Research - John Wohlgemuth, Ph.D.  

NLE Websites -- All DOE Office Websites (Extended Search)

NREL Publications View NREL publications for this staff member. Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

115

Institute of Photo Electronic Thin Film Devices and Technology...  

Open Energy Info (EERE)

Institute of Photo Electronic Thin Film Devices and Technology of Nankai University Jump to: navigation, search Name: Institute of Photo-Electronic Thin Film Devices and Technology...

116

Thickness Dependency of Thin Film Samaria Doped Ceria for Oxygen...  

NLE Websites -- All DOE Office Websites (Extended Search)

Dependency of Thin Film Samaria Doped Ceria for Oxygen Sensing . Thickness Dependency of Thin Film Samaria Doped Ceria for Oxygen Sensing . Abstract: High temperature oxygen...

117

Direct Measurement of Oxygen Incorporation into Thin Film Oxides...  

NLE Websites -- All DOE Office Websites (Extended Search)

Measurement of Oxygen Incorporation into Thin Film Oxides at Room Temperature Upon Ultraviolet Phton Irradiation. Direct Measurement of Oxygen Incorporation into Thin Film Oxides...

118

Spectroscopic ellipsometry characterization of thin-film silicon nitride  

SciTech Connect

We have measured and analyzed the optical characteristics of a series of silicon nitride thin films prepared by plasma-enhanced chemical vapor deposition on silicon substrates for photovoltaic applications. Spectroscopic ellipsometry measurements were made by using a two-channel spectroscopic polarization modulator ellipsometer that measures N, S, and C data simultaneously. The data were fit to a model consisting of air / roughness / SiN / crystalline silicon. The roughness was modeled using the Bruggeman effective medium approximation, assuming 50% SiN, 50% voids. The optical functions of the SiN film were parameterized using a model by Jellison and Modine. All the {Chi}{sup 2} are near 1, demonstrating that this model works extremely well for all SiN films. The measured dielectric functions were used to make optimized SiN antireflection coatings for crystalline silicon solar cells.

Jellison, G.E. Jr.; Modine, F.A. [Oak Ridge National Lab., TN (United States); Doshi, P.; Rohatgi, A. [Georiga Inst. of Technology, Atlanta, GA (United States)

1997-05-01T23:59:59.000Z

119

NREL: Photovoltaics Research - Company Partners in Photovoltaic  

NLE Websites -- All DOE Office Websites (Extended Search)

Company Partners in Photovoltaic Manufacturing R&D Company Partners in Photovoltaic Manufacturing R&D More than 40 private-sector companies partnered with NREL on successful efforts within the PV Manufacturing R&D Project. They included manufacturers of crystalline silicon, thin-film, and concentrator solar technologies. The companies are listed below. Advanced Energy Systems Alpha Solarco ASE Americas AstroPower/GE Energy Boeing Aerospace BP Solar Cronar Crystal Systems Dow Corning Energy Conversion Devices Energy Photovoltaics ENTECH Evergreen Solar First Solar Glasstech Solar Global Photovoltaic Specialists Global Solar Energy Golden Photon Iowa Thin Film Technologies ITN Energy Systems Kopin Mobil Solar Energy Omnion Power Engineering Photon Energy Photovoltaics International PowerLight RWE Schott Solar/Schott Solar

120

BDS thin film damage competition  

SciTech Connect

A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

Stolz, C J; Thomas, M D; Griffin, A J

2008-10-24T23:59:59.000Z

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Presented at the 28 IEEE Photovoltaics Specialists Conference, Anchorage Alaska, September 17-22, 2000  

E-Print Network (OSTI)

Presented at the 28 th IEEE Photovoltaics Specialists Conference, Anchorage Alaska, September 17. Tarrant, Siemens Solar Industries, Camarillo, CA 93012 ABSTRACT Many thin-film CIS photovoltaic devices behavior. INTRODUCTION The modest transient behavior exhibited by many thin-film CIS photovoltaic devices

Sites, James R.

122

Photoconductivity in reactively evaporated copper indium selenide thin films  

SciTech Connect

Copper indium selenide thin films of composition CuInSe{sub 2} with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10{sup ?5} mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe{sub 2} films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (?) of 10{sup 6} cm{sup ?1} at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe{sub 2} thin films indicate its suitability in photovoltaic applications.

Urmila, K. S., E-mail: urmilaks7@gmail.com; Asokan, T. Namitha, E-mail: urmilaks7@gmail.com; Pradeep, B., E-mail: urmilaks7@gmail.com [Solid State Physics Laboratory, Cochin University of Science and Technology, Kochi, Kerala (India); Jacob, Rajani; Philip, Rachel Reena [Thin Film Research Laboratory, Union Christian College, Aluva, Kerala (India)

2014-01-28T23:59:59.000Z

123

Innovative Thin Films LLC | Open Energy Information  

Open Energy Info (EERE)

Thin Films LLC Thin Films LLC Jump to: navigation, search Name Innovative Thin Films LLC Place Toledo, Ohio Zip 43607 Product Provider of altnernative energy thin film deposition technology. Coordinates 46.440613°, -122.847838° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":46.440613,"lon":-122.847838,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

124

Spatial Frequency Filtering Using Nondelineated Thin Films  

Science Journals Connector (OSTI)

We present a new approach for achieving spatial frequency filtering in the analog domain. Our device, the Thin Film Spatial Filter, is a hybrid structure which combines the strengths of analog VLSI technology with the simplicity of a continuous sheet ...

J. Mcelvain; J. Langan; A. J. Heeger

1997-10-01T23:59:59.000Z

125

Visible spectrometer utilizing organic thin film absorption  

E-Print Network (OSTI)

In this thesis, I modeled and developed a spectrometer for the visible wavelength spectrum, based on absorption characteristics of organic thin films. The device uses fundamental principles of linear algebra to reconstruct ...

Tiefenbruck, Laura C. (Laura Christine)

2004-01-01T23:59:59.000Z

126

Photovoltaic cells employing zinc phosphide  

DOE Patents (OSTI)

A photovoltaic cell having a zinc phosphide absorber. The zinc phosphide can be a single or multiple crystal slice or a thin polycrystalline film. The cell can be a Schottky barrier, heterojunction or homojunction device. Methods for synthesizing and crystallizing zinc phosphide are disclosed as well as a method for forming thin films.

Barnett, Allen M. (Newark, DE); Catalano, Anthony W. (Wilmington, DE); Dalal, Vikram L. (Newark, DE); Masi, James V. (Wilbraham, MA); Meakin, John D. (Newark, DE); Hall, Robert B. (Newark, DE)

1984-01-01T23:59:59.000Z

127

PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2004; 12:93111 (DOI: 10.1002/pip.527)  

E-Print Network (OSTI)

PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2004; 12(In,Ga)Se2; thin-films; photovoltaics; solar energy INTRODUCTION P olycrystalline thin-film solar cells the complete solar spectrum for photovoltaic power conversion. There are several chalcopyr

Romeo, Alessandro

128

Thin-film Rechargeable Lithium Batteries  

DOE R&D Accomplishments (OSTI)

Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

Dudney, N. J.; Bates, J. B.; Lubben, D.

1995-06-00T23:59:59.000Z

129

SunShot Initiative: Organic Photovoltaics Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Organic Photovoltaics Research to Organic Photovoltaics Research to someone by E-mail Share SunShot Initiative: Organic Photovoltaics Research on Facebook Tweet about SunShot Initiative: Organic Photovoltaics Research on Twitter Bookmark SunShot Initiative: Organic Photovoltaics Research on Google Bookmark SunShot Initiative: Organic Photovoltaics Research on Delicious Rank SunShot Initiative: Organic Photovoltaics Research on Digg Find More places to share SunShot Initiative: Organic Photovoltaics Research on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Organic Photovoltaics Research Graphic showing the seven layers of an organic PV cell: electrode, donor, acceptor, active layer, PEDOT:PSS, transparent conductive oxide, and glass.

130

Thin film absorber for a solar collector  

DOE Patents (OSTI)

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, William G. (Cutchogue, NY)

1985-01-01T23:59:59.000Z

131

Peeling from a patterned thin elastic film  

E-Print Network (OSTI)

Inspired by the observation that many naturally occurring adhesives arise as textured thin films, we consider the displacement controlled peeling of a flexible plate from an incision-patterned thin adhesive elastic layer. We find that crack initiation from an incision on the film occurs at a load much higher than that required to propagate it on a smooth adhesive surface; multiple incisions thus cause the crack to propagate intermittently. Microscopically, this mode of crack initiation and propagation in geometrically confined thin adhesive films is related to the nucleation of cavitation bubbles behind the incision which must grow and coalesce before a viable crack propagates. Our theoretical analysis allows us to rationalize these experimental observations qualitatively and quantitatively and suggests a simple design criterion for increasing the interfacial fracture toughness of adhesive films.

A. Ghatak; L. Mahadevan; J. Y. Chung; M. K. Chaudhury; V. Shenoy

2004-04-29T23:59:59.000Z

132

Method for making thin polypropylene film  

DOE Patents (OSTI)

An economical method is provided for making uniform thickness polypropylene film as thin as 100 Angstroms. A solution of polypropylene dissolved in xylene is formed by mixing granular polypropylene and xylene together in a flask at an elevated temperature. A substrate, such as a glass plate or microscope slide is immersed in the solution. When the glass plate is withdrawn from the solution at a uniform rate, a thin polypropylene film forms on a flat surface area of the glass plate as the result of xylene evaporation. The actual thickness of the polypropylene film is functional of the polypropylene in xylene solution concentration, and the particular withdrawal rate of the glass plate from the solution. After formation, the thin polypropylene film is floated from the glass plate onto the surface of water, from which it is picked up with a wire hoop.

Behymer, R.D.; Scholten, J.A.

1985-11-21T23:59:59.000Z

133

SINGLE AND DUAL LAYER THIN FILM BULGE TESTING  

E-Print Network (OSTI)

film windows that are used in Next Generation Lithography masks and certain MEMS devices. The bulge testing method measures the mechanical properties of a thin film by isolating it in a thin film window of the system. Figure 6 Dual Layer Thin Film Membrane Window For a dual layer membrane the effective total

Huston, Dryver R.

134

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES  

E-Print Network (OSTI)

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES S. Suresh1 , T.-G. Nieh2 and B.W. Choi2: Mechanical properties; Nano-indentation; Thin films; Copper; Dislocations Introduction Indentation methods films on substrates (e.g., [2,3]) using instrumented indentation. Nano-indentation studies of thin films

Suresh, Subra

135

A high performance thin film thermoelectric cooler  

SciTech Connect

Thin film thermoelectric devices with small dimensions have been fabricated using microelectronics technology and operated successfully in the Seebeck mode as sensors or generators. However, they do not operate successfully in the Peltier mode as coolers, because of the thermal bypass provided by the relatively thick substrate upon which the thermoelectric device is fabricated. In this paper a processing sequence is described which dramatically reduces this thermal bypass and facilitates the fabrication of high performance integrated thin film thermoelectric coolers. In the processing sequence a very thin amorphous SiC (or SiO{sub 2}SiN{sub 4}) film is deposited on a silicon substrate using conventional thin film deposition and a membrane formed by removing the silicon substrate over a desired region using chemical etching or micro-machining. Thermoelements are deposited on the membrane using conventional thin film deposition and patterning techniques and configured so that the region which is to be cooled is abutted to the cold junctions of the Peltier thermoelements while the hot junctions are located at the outer peripheral area which rests on the silicon substrate rim. Heat is pumped laterally from the cooled region to the silicon substrate rim and then dissipated vertically through it to an external heat sink. Theoretical calculations of the performance of a cooler described above indicate that a maximum temperature difference of about 40--50K can be achieved with a maximum heat pumping capacity of around 10 milliwatts.

Rowe, D.M.; Min, G.; Volklein, F.

1998-07-01T23:59:59.000Z

136

Superhydrophobic Thin Film Symposium | ornl.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

Superhydrophobic Thin Film Symposium Superhydrophobic Thin Film Symposium Sep 05 2012 12:00 AM - 05:00 PM Hosted by Oak Ridge Laboratory's Partnerships Directorate and focusing on the recent LDRD Launch project work completed by Dr. Tolga Aytug and Dr. John T. Simpson (ORNL research PI's). Oak Ridge, TN Oak Ridge National Laboratory CONTACT : Email: Cassie Lopez Phone:(865) 576-9294 Add to Calendar SHARE Hosted by Oak Ridge Laboratory's Partnerships Directorate and focusing on the recent LDRD Launch project work completed by Dr. Tolga Aytug and Dr. John T. Simpson (ORNL research PI's). Purpose To share the ORNL Superhydrophonbic Thin Film technology to prospective commercial partners. Date and Time The conference will be held on the morning of Wednesday September 5th at Oak Ridge National Laboratory (ORNL) by Partnerships and Technology

137

Thin Film Transistors On Plastic Substrates  

DOE Patents (OSTI)

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

2004-01-20T23:59:59.000Z

138

Vibration welding system with thin film sensor  

DOE Patents (OSTI)

A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

2014-03-18T23:59:59.000Z

139

SAW determination of surface area of thin films  

DOE Patents (OSTI)

N.sub.2 adsorption isotherms are measured from thin films on SAW devices. The isotherms may be used to determine the surface area and pore size distribution of thin films.

Frye, Gregory C. (Albuquerque, NM); Martin, Stephen J. (Albuquerque, NM); Ricco, Antonio J. (Albuquerque, NM)

1990-01-01T23:59:59.000Z

140

Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown...  

NLE Websites -- All DOE Office Websites (Extended Search)

Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by Oxygen-plasma-assisted Molecular Beam Epitaxy. Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by...

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Annealed CVD molybdenum thin film surface  

DOE Patents (OSTI)

Molybdenum thin films deposited by pyrolytic decomposition of Mo(CO).sub.6 attain, after anneal in a reducing atmosphere at temperatures greater than 700.degree. C., infrared reflectance values greater than reflectance of supersmooth bulk molybdenum. Black molybdenum films deposited under oxidizing conditions and annealed, when covered with an anti-reflecting coating, approach the ideal solar collector characteristic of visible light absorber and infrared energy reflector.

Carver, Gary E. (Tucson, AZ); Seraphin, Bernhard O. (Tucson, AZ)

1984-01-01T23:59:59.000Z

142

Modeling and control of thin film surface morphology: application to thin film solar cells  

E-Print Network (OSTI)

Conference on Photovoltaic Energy Conversion. Conference17th European Photovoltaic Solar Energy Conference, 0:11,

Huang, Jianqiao

2012-01-01T23:59:59.000Z

143

THIN FILM MECHANICS BULGING AND Ph.D Dissertation  

E-Print Network (OSTI)

for the intensive effort in research in materials and processing techniques. Thin film windows are window underneath. The thin film window has such a small thickness to span ratio that it can usually be considered and precision-stretching of thin film windows are examined. Bulge Testing is a method used to evaluate

Huston, Dryver R.

144

Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films  

SciTech Connect

Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2? = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (?E) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, ?. The value of n and k increases with the increase of substrate temperature.

Kumar, B. Rajesh, E-mail: rajphyind@gmail.com [Department of Physics, Sri Venkateswara University, Tirupati - 517 502, A.P, India and Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India); Hymavathi, B.; Rao, T. Subba [Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India)

2014-01-28T23:59:59.000Z

145

Fast photovoltaic effects tuned by vicinal interface microstructure in manganite-based all-perovskite-oxide heterojunctions  

Science Journals Connector (OSTI)

Interfacial microstructure tunable photovoltaic effects have been reported in heterojunctions of La1?xCaxMnO3 thin films and tilted or exact cut...

Lu, Zhi-qing; Ni, Hao; Zhao, Kun; Leng, Wen-xiu; Kong, Yu-Chau; Wong, Hong-Kuen

2011-01-01T23:59:59.000Z

146

Thin films for solar control applications  

Science Journals Connector (OSTI)

...properly cited. Thin films for solar control applications Sapna Shrestha...performance of vacuum glazing. Solar Energy 81, 8. ( doi:10...mirrors produced by plasma ion assisted deposition. J. Non-Cryst...and cost of vacuum glazing. Solar Energy 55, 151. ( doi:10...

2010-01-01T23:59:59.000Z

147

Investigation of deep level defects in CdTe thin films  

SciTech Connect

In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 °C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

Shankar, H.; Castaldini, A. [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy); Dieguez, E.; Rubio, S. [Crystal Growth Lab, Department of Materials Physics, Faculty of Science, University Autonoma of Madrid, Ciudad Universitaria de Cantoblanco, 28049, Madrid (Spain); Dauksta, E.; Medvid, A. [Institute of Technical Physics, Riga Technical University, 14 Azenes Str, Riga, Latvia, Department of Materials (Latvia); Cavallini, A. [Department of Physics and Astronomy,University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy)

2014-02-21T23:59:59.000Z

148

A thin film transistor driven microchannel device  

E-Print Network (OSTI)

= [8] 25 where n = 4 for the ideal case. However, based on experimental results, typical values for n are between 1 and 2.22 In any case, the larger potential drop appears at the smaller electrode. 2.4. PECVD Thin Film Silicon nitride film... can be deposited by a low-pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD). Table II shows a comparison of silicon nitride?s physical properties between two deposition methods. The PECVD silicon...

Lee, Hyun Ho

2005-02-17T23:59:59.000Z

149

Nitrogen doped zinc oxide thin film  

SciTech Connect

To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

Li, Sonny X.

2003-12-15T23:59:59.000Z

150

Structures for dense, crack free thin films  

DOE Patents (OSTI)

The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

Jacobson, Craig P. (Lafayette, CA); Visco, Steven J. (Berkeley, CA); De Jonghe, Lutgard C. (Lafayette, CA)

2011-03-08T23:59:59.000Z

151

Fracture patterns in thin films and multilayers Alex A. Volinsky  

E-Print Network (OSTI)

Fracture patterns in thin films and multilayers Alex A. Volinsky University of South Florida, excessive residual and externally applied stresses cause film fracture. In the case of tensile stress is the key for causing thin film fracture, either in tension, or compression, it is the influence

Volinsky, Alex A.

152

Enhancement of photovoltaic properties of multicrystalline silicon solar cells by combination of buried metallic contacts and thin porous silicon  

SciTech Connect

Photovoltaic properties of buried metallic contacts (BMCs) with and without application of a front porous silicon (PS) layer on multicrystalline silicon (mc-Si) solar cells were investigated. A Chemical Vapor Etching (CVE) method was used to perform front PS layer and BMCs of mc-Si solar cells. Good electrical performance for the mc-Si solar cells was observed after combination of BMCs and thin PS films. As a result the current-voltage (I-V) characteristics and the internal quantum efficiency (IQE) were improved, and the effective minority carrier diffusion length (Ln) increases from 75 to 110 {mu}m after BMCs achievement. The reflectivity was reduced to 8% in the 450-950 nm wavelength range. This simple and low cost technology induces a 12% conversion efficiency (surface area = 3.2 cm{sup 2}). The obtained results indicate that the BMCs improve charge carrier collection while the PS layer passivates the front surface. (author)

Ben Rabha, M.; Bessais, B. [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l'Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2010-03-15T23:59:59.000Z

153

Fabrication Of Multilayered Thin Films Via Spin-Assembly  

NLE Websites -- All DOE Office Websites (Extended Search)

Fabrication Of Multilayered Thin Films Via Spin-Assembly Fabrication Of Multilayered Thin Films Via Spin-Assembly Fabrication Of Multilayered Thin Films Via Spin-Assembly A process of forming multilayer thin film heterostructures. Available for thumbnail of Feynman Center (505) 665-9090 Email Fabrication Of Multilayered Thin Films Via Spin-Assembly A process of forming multilayer thin film heterostructures is disclosed and includes applying a solution including a first water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species onto a substrate to form a first coating layer on the substrate, drying the first coating layer on the substrate, applying a solution including a second water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species

154

Photovoltaic Energy Program Overview Fiscal Year 1996  

SciTech Connect

Significant activities in the National Photovoltaic Program are reported for each of the three main program elements. In Research and Development, advances in thin-film materials and crystalline silicon materials are described. The Technology Development report describes activities in photovoltaic manufacturing technology, industrial expansion, module and array development, and testing photovoltaic system components. Systems Engineering and Applications projects described include projects with government agencies, projects with utilities, documentation of performance for international applications, and product certification.

NONE

1997-05-01T23:59:59.000Z

155

Metal Nanoparticles Enhanced Optical Absorption in Thin Film Solar Cells  

Science Journals Connector (OSTI)

The plasmonic enhanced absorption for thin film solar cells with silver nanoparticles (NPs) deposited on top of the amorphous silicon film (a-Si:H) solar cells and embedded inside the...

Xie, Wanlu; Liu, Fang; Qu, Di; Xu, Qi; Huang, Yidong

156

Fluorination of amorphous thin-film materials with xenon fluoride  

DOE Patents (OSTI)

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

Weil, R.B.

1987-05-01T23:59:59.000Z

157

Nanoarrays for Light Management in Thin Film Solar Cells  

Science Journals Connector (OSTI)

We report the use of plasmonic and photonic nanoarray to achieve light management in thin film solar cells. Theoretical and experimental data will be presented.

Ji, Jin; Nasr, Magued B; McCutcheon, Murray W; Herring, Cy

158

Partial Shading in Monolithic Thin Film PV Modules: Analysis...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

A. Alam, "Identification, Characterization and Implications of Shadow Degradation in Thin Film Solar Cells," in Reliability Physics Symposium (IRPS), 2011 IEEE International, 2011,...

159

Low-Cost Light Weigh Thin Film Solar Concentrators  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Light Weight Thin Film Solar Concentrators PI: Gani B. Ganapathi (JPLCaltech) Other Contributors: L'Garde: Art Palisoc, Gyula Greschik, Koorosh Gidanian JPL: Bill Nesmith,...

160

Thermochromic Properties of Nanocrystal-based Thin Films | The...  

NLE Websites -- All DOE Office Websites (Extended Search)

Nanocrystal-based Thin Films Functional coatings that can selectively reflect or transmit near-infrared solar radiation while maintiaining high transmittance for visible light can...

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

High-Throughput Thin Film Approach for Screening of Temperature-Pressure-Composition Phase Space  

SciTech Connect

Many solar energy technologies, for example CIGS and CdTe photovoltaics, utilize materials in thin film form. The equilibrium phase diagrams for these and other more novel solar energy materials are not known or are irrelevant because of the non-equilibrium character of the thin film growth processes. We demonstrate a high-throughput thin film approach for screening of temperature-pressure-composition phase diagrams and phase spaces. The examples in focus are novel solar absorbers Cu-N, Cu-O and p-type transparent conductors in the Cr2O3-MnO system. The composition axis of the Cr2O3-MnO phase diagram was screened using a composition spread method. The temperature axis of the Mn-O phase diagram was screened using a temperature spread method. The pressure axes of the Cu-N and Cu-O phase diagrams were screened using rate spread method with the aid of non-equilibrium growth phenomena. Overall these three methods constitute an approach to high-throughput screening of inorganic thin film phase diagrams. This research is supported by U.S. Department of Energy as a part of two NextGen Sunshot projects and an Energy Frontier Research Center.

Zakutayev, A.; Subramaniyan, A.; Caskey, C. M.; Ndione, P. F.; Richards, R. M.; O'Hayre, R.; Ginley, D. S.

2013-01-01T23:59:59.000Z

162

Experimental Demonstration of Quasi-Resonant Absorption in Silicon Thin Films for Enhanced Solar Light Trapping  

E-Print Network (OSTI)

We experimentally demonstrate that the addition of partial lattice disorder to a thin-film micro-crystalline silicon photonic crystal results in the controlled spectral broadening of its absorption peaks to form quasi resonances; increasing light trapping over a wide bandwidth while also reducing sensitivity to the angle of incident radiation. Accurate computational simulations are used to design the active-layer photonic crystal so as to maximize the number of its absorption resonances over the broadband interval where micro-crystalline silicon is weakly absorbing before lattice disorder augmented with fabrication-induced imperfections are applied to further boost performance. Such a design strategy may find practical use for increasing the efficiency of thin-film silicon photovoltaics.

Oskooi, Ardavan; Ishizaki, Kenji; Noda, Susumu

2013-01-01T23:59:59.000Z

163

Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics  

E-Print Network (OSTI)

nanowire networks as window layers in thin film solar cells.window layer for fully solution-deposited thin filmITO) thin films by silver nanowire composite window layers

Chung, Choong-Heui

2012-01-01T23:59:59.000Z

164

Method of improving field emission characteristics of diamond thin films  

DOE Patents (OSTI)

A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

Krauss, Alan R. (Naperville, IL); Gruen, Dieter M. (Downer Grove, IL)

1999-01-01T23:59:59.000Z

165

Method of improving field emission characteristics of diamond thin films  

DOE Patents (OSTI)

A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.

Krauss, A.R.; Gruen, D.M.

1999-05-11T23:59:59.000Z

166

Solution-processed photovoltaics with advanced characterization and analysis  

E-Print Network (OSTI)

solar cell concepts, ranging from single-crystal silicon to thin-film technologies,solar cells. [4,5] With a highest demonstrated cell efficiency of 17.3%, CdTe- based photovoltaic technology

Duan, Hsin-Sheng

2014-01-01T23:59:59.000Z

167

Apparatus for laser assisted thin film deposition  

DOE Patents (OSTI)

A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

Warner, B.E.; McLean, W. II

1996-02-13T23:59:59.000Z

168

Rechargeable thin-film lithium batteries  

SciTech Connect

Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

1993-09-01T23:59:59.000Z

169

Thin-film Rechargeable Lithium Batteries  

DOE R&D Accomplishments (OSTI)

Rechargeable thin films batteries with lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. The cathodes include TiS{sub 2}, the {omega} phase of V{sub 2}O{sub 5}, and the cubic spinel Li{sub x}Mn{sub 2}O{sub 4} with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The development of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25 C of 2 {mu}S/cm. Thin film cells have been cycled at 100% depth of discharge using current densities of 2 to 100 {mu}A/cm{sup 2}. The polarization resistance of the cells is due to the slow insertion rate of Li{sup +} ions into the cathode. Chemical diffusion coefficients for Li{sup +} ions in the three types of cathodes have been estimated from the analysis of ac impedance measurements.

Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, X.

1993-11-00T23:59:59.000Z

170

Cu(In,Ga)Se2based Photovoltaics: Challenges and Opportunities  

E-Print Network (OSTI)

Cu(In,Ga)Se2­based Photovoltaics: Challenges and Opportunities William Shafarman Institute of Energy Conversion University of Delaware #12;Thin Film Photovoltaics Potential for low cost PV using a Thickness K.Kim, et al., IEEE J. Photovoltaics, 3, 446 (2013). 2 µm, 60 min reaction 1 µm, 25 min reaction 0

Firestone, Jeremy

171

High-performance Si microwire photovoltaics Michael D. Kelzenberg,a  

E-Print Network (OSTI)

High-performance Si microwire photovoltaics Michael D. Kelzenberg,a Daniel B. Turner-Evans,a Morgan for low- cost, thin-film photovoltaics. Here, we demonstrate VLS-grown Si microwires that have suitable electrical properties for high-perfor- mance photovoltaic applications, including long minority

Atwater, Harry

172

Experimental characterisations of thin film transmission line losses  

E-Print Network (OSTI)

Experimental characterisations of thin film transmission line losses D. Kim, H. Kim and Y. Eo New frequency-variant losses of planar thin film transmission lines are experimentally investigated in a broad frequency range. The fre- quency-variant transmission line parameters are accurately determined

173

Avalanches through windows: Multiscale visualization in magnetic thin films  

E-Print Network (OSTI)

Avalanches through windows: Multiscale visualization in magnetic thin films Alessandro Magni, Cornell University, Ithaca, NY 14853-2501 Abstract--The dynamics of domain walls motion in thin films dynamics, but are strongly dependent on the size of the windows chosen. Here we investigate how to properly

Sethna, James P.

174

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors  

Science Journals Connector (OSTI)

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (?-HfIZO) thin film transistors (TFTs). Co-sputtering-processed ?-HfIZO thin films have shown an amorphous phase in nature. ...

Sheng-Po Chang; San-Syong Shih

2012-01-01T23:59:59.000Z

175

Microstructure and properties of copper thin films on silicon substrates  

E-Print Network (OSTI)

copper thin films but on an expense of conductivity. This study proposes a technique to deposit high strength and high conductivity copper thin films on different silicon substrates at room temperature. Single crystal Cu (100) and Cu (111) have been grown...

Jain, Vibhor Vinodkumar

2009-05-15T23:59:59.000Z

176

APPLIED PHYSICS REVIEWS Erbium implanted thin film photonic materials  

E-Print Network (OSTI)

, phosphosilicate, borosilicate, and soda-lime glasses , ceramic thin films Al2O3, Y2O3, LiNbO3 , and amorphous. Phosphosilicate glass. . . . . . . . . . . . . . . . . . . . . . 7 C. Soda-lime silicate glass Er-doped thin film photonic materials is described. It focuses on oxide glasses pure SiO2

Polman, Albert

177

Solid State Photovoltaic Research Branch  

SciTech Connect

This report summarizes the progress of the Solid State Photovoltaic Research Branch of the Solar Energy Research Institute (SERI) from October 1, 1988, through September 30,l 1989. Six technical sections of the report cover these main areas of SERIs in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Laser Raman and Luminescence Spectroscopy. Sections have been indexed separately for inclusion on the data base.

Not Available

1990-09-01T23:59:59.000Z

178

Advanced Thin Film Thermoelectric Systems forEfficient Air-Conditioner...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Thin Film Thermoelectric Systems forEfficient Air-Conditioners Advanced Thin Film Thermoelectric Systems forEfficient Air-Conditioners Presents recent advances in thermoelectric...

179

Nanoassembly control and optical absorption in CdTe-ZnO nanocomposite thin films  

SciTech Connect

The spatial distribution of CdTe nanoparticles within a ZnO thin-film matrix was manipulated using a dual-source, sequential radio-frequency (RF)-sputter deposition technique to produce nanocomposite materials with tuned spectral absorption characteristics. The relative substrate exposure time to each sputtering source was used to control the semiconductor phase connectivity, both within the film plane and along the film growth direction, to influence the degree of photocarrier confinement and the resulting optical transition energies exhibited by the CdTe phase. Significant changes (up to {Delta}E {approx_equal} 0.3 eV) in the absorption onset energy for the CdTe nanoparticle ensemble were produced through modification in the extended structure of the semiconductor phase. Raman spectroscopy, cross-sectional transmission electron microscopy, and x-ray diffraction were used to confirm the phase identity of the CdTe and ZnO and to characterize the nanostructures produced in these composite films. Isochronal annealing for 5 min at temperatures up to 800 deg. C further indicated the potential to improve film crystallinity as well as to establish the post-deposition thermal processing limits of stability for the semiconductor phase. The study highlights the significance of ensemble behavior as a means to influence quantum-scale semiconductor optical characteristics of import to the use of such materials as the basis for a variety of optoelectronic devices, including photosensitized heterojunction components in thin film photovoltaics.

Potter, B. G. Jr. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States); Beal, R. J.; Allen, C. G. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States)

2012-02-01T23:59:59.000Z

180

PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2004; 12:3338 (DOI: 10.1002/pip.525)  

E-Print Network (OSTI)

, Loughborough, Leicestershire LE11 3TU, UK. Polycrystalline thin-film CdTe/CdS solar cells have been developed # 2004 John Wiley & Sons, Ltd. key words: solar cells; CdTe; tandem solar cell; solar energy; thin films INTRODUCTION T he polycrystalline CdTe/CdS thin-film solar cell is one of the most important photovoltaic

Romeo, Alessandro

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Thin film adhesion by nanoindentation-induced superlayers. Final report  

SciTech Connect

This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

Gerberich, William W.; Volinsky, A.A.

2001-06-01T23:59:59.000Z

182

Glow discharge plasma deposition of thin films  

DOE Patents (OSTI)

A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

Weakliem, Herbert A. (Pennington, NJ); Vossen, Jr., John L. (Bridgewater, NJ)

1984-05-29T23:59:59.000Z

183

Thin Film Femtosecond Laser Damage Competition  

SciTech Connect

In order to determine the current status of thin film laser resistance within the private, academic, and government sectors, a damage competition was started at the 2008 Boulder Damage Symposium. This damage competition allows a direct comparison of the current state of the art of high laser resistance coatings since they are tested using the same damage test setup and the same protocol. In 2009 a high reflector coating was selected at a wavelength of 786 nm at normal incidence at a pulse length of 180 femtoseconds. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials and layer count, and spectral results will also be shared.

Stolz, C J; Ristau, D; Turowski, M; Blaschke, H

2009-11-14T23:59:59.000Z

184

SunShot Initiative: Photovoltaics Research and Development  

NLE Websites -- All DOE Office Websites (Extended Search)

Research and Research and Development to someone by E-mail Share SunShot Initiative: Photovoltaics Research and Development on Facebook Tweet about SunShot Initiative: Photovoltaics Research and Development on Twitter Bookmark SunShot Initiative: Photovoltaics Research and Development on Google Bookmark SunShot Initiative: Photovoltaics Research and Development on Delicious Rank SunShot Initiative: Photovoltaics Research and Development on Digg Find More places to share SunShot Initiative: Photovoltaics Research and Development on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Photovoltaics Research and Development

185

Method for making surfactant-templated thin films  

DOE Patents (OSTI)

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (New Orleans, LA); Fan, Hong You (Albuquerque, NM)

2010-08-31T23:59:59.000Z

186

Method for making surfactant-templated thin films  

DOE Patents (OSTI)

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

2002-01-01T23:59:59.000Z

187

Canrom Photovoltaics Inc | Open Energy Information  

Open Energy Info (EERE)

Canrom Photovoltaics Inc Canrom Photovoltaics Inc Jump to: navigation, search Name Canrom Photovoltaics Inc Place Niagara Falls, New York Zip 14305 Sector Solar Product Developer of a thin-film CdTe based solar electric module. References Canrom Photovoltaics Inc[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Canrom Photovoltaics Inc is a company located in Niagara Falls, New York . References ↑ "Canrom Photovoltaics Inc" Retrieved from "http://en.openei.org/w/index.php?title=Canrom_Photovoltaics_Inc&oldid=343203" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version Permanent link Browse properties

188

Josephson junction in a thin film  

SciTech Connect

The phase difference {phi}(y) for a vortex at a line Josephson junction in a thin film attenuates at large distances as a power law, unlike the case of a bulk junction where it approaches exponentially the constant values at infinities. The field of a Josephson vortex is a superposition of fields of standard Pearl vortices distributed along the junction with the line density {phi}'(y)/2{pi}. We study the integral equation for {phi}(y) and show that the phase is sensitive to the ratio l/{Lambda}, where l={lambda}{sub J}{sup 2}/{lambda}{sub L}, {Lambda}=2{lambda}{sub L}{sup 2}/d, {lambda}{sub L}, and {lambda}{sub J} are the London and Josephson penetration depths, and d is the film thickness. For l<<{Lambda}, the vortex ''core'' of the size l is nearly temperature independent, while the phase ''tail'' scales as l{Lambda}/y{sup 2}={lambda}{sub J}2{lambda}{sub L}/d/y{sup 2}; i.e., it diverges as T{yields}T{sub c}. For l>>{Lambda}, both the core and the tail have nearly the same characteristic length l{Lambda}.

Kogan, V. G.; Dobrovitski, V. V.; Clem, J. R.; Mawatari, Yasunori; Mints, R. G.

2001-04-01T23:59:59.000Z

189

This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE JOURNAL OF PHOTOVOLTAICS 1  

E-Print Network (OSTI)

as presented, with the exception of pagination. IEEE JOURNAL OF PHOTOVOLTAICS 1 Gallium Arsenide Solar Cell--Gallium arsenide, nanospheres, photovoltaic systems, whispering gallery modes (WGMs). I. INTRODUCTION THE route as the active layer is thinned [2]. Thin-film photovoltaics offer the possibility to significantly reduce

Atwater, Harry

190

Bulge testing of single and dual layer thin films Dryver R. Huston*ab  

E-Print Network (OSTI)

to a thin film window. By comparing the pressure- displacement relation with a mechanical model, the elastic structures, such as the thin film windows that are used in Next Generation Lithography masks and certain MEMS it in a thin film window. Thin film windows are fabricated by removing the thick substrate out from underneath

Huston, Dryver R.

191

Focused ion beam specimen preparation for electron holography of electrically biased thin film solar cells  

E-Print Network (OSTI)

, biased TEM specimen, thin film solar cell, FIB Thin films of hydrogenated Si (Si:H) can be used as active for electron holography of a thin film solar cell using conventional lift-out specimen preparation and a homeFocused ion beam specimen preparation for electron holography of electrically biased thin film

Dunin-Borkowski, Rafal E.

192

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

193

Composition–Structure–Function Diagrams of Ti–Ni–Au Thin Film Shape Memory Alloys  

Science Journals Connector (OSTI)

thin films; annealing; high temperature shape memory alloys; combinatorial materials science; phase transformation ...

Pio John S. Buenconsejo; Alfred Ludwig

2014-11-04T23:59:59.000Z

194

Substrate Effect on the Melting Temperature of Thin Polyethylene Films M. Rafailovich,1,* J. Sokolov,1  

E-Print Network (OSTI)

Substrate Effect on the Melting Temperature of Thin Polyethylene Films Y. Wang,1 M. Rafailovich,1 polyethylene thin films. The Tm decreases with the film thickness decrease when the film is thinner than that the degree of crystal- linity of polyethylene (PE) remained high even in films as thin as 15 nm [5]. A novel

195

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells  

DOE Patents (OSTI)

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Ramanathan, Kannan V. (Lakewood, CA); Contreras, Miguel A. (Golden, CA); Bhattacharya, Raghu N. (Littleton, CA); Keane, James (Lakewood, CA); Noufi, Rommel (Golden, CA)

1999-01-01T23:59:59.000Z

196

Chemical analysis of thin films at Sandia National Laboratories  

SciTech Connect

The characterization of thin films produced by chemical and physical vapor deposition requires special analytical techniques. When the average compositions of the films are required, dissolution of the thin films and measurement of the concentrations of the solubilized species is the appropriate analytical approach. In this report techniques for the wet chemical analysis of thin films of Si:Al, P/sub 2/O/sub 5/:SiO/sub 2/, B/sub 2/O/sub 3/:SiO/sub 2/, TiB/sub x/ and TaB/sub x/ are described. The analyses are complicated by the small total quantities of these analytes present in the films, the refractory characters of these analytes, and the possibility of interferences from the substrates on which the films are deposited. Etching conditions are described which dissolve the thin films without introducing interferences from the substrates. A chemical amplification technique and inductively coupled plasma atomic emission spectrometry are shown to provide the sensitivity required to measure the small total quantities (micrograms to milligrams) of analytes present. Also the chemical analysis data has been used to calibrate normal infrared absorption spectroscopy to give fast estimates of the phosphorus and/or boron dopant levels in thin SiO/sub 2/ films.

Tallant, D.R.; Taylor, E.L.

1980-05-01T23:59:59.000Z

197

Casimir effect for thin films from imperfect materials  

E-Print Network (OSTI)

We propose an approach for investigation of interaction of thin material films with quantum electrodynamic fields. Using main principles of quantum electrodynamics (locality, gauge invariance, renormalizability) we construct a single model for Casimir-like phenomena arising near the film boundary on distances much larger then Compton wavelength of the electron where fluctuations of Dirac fields are not essential. In this model the thin film is presented by a singular background field concentrated on a 2-dimensional surface. All properties of the film material are described by one dimensionless parameter. For two parallel plane films we calculate the photon propagator and the Casimir force, which appears to be dependent on film material and can be both attractive and repulsive. We consider also an interaction of plane film with point charge and straight line current. Here, besides usual results of classical electrodynamics the model predicts appearance of anomalous electric and magnetic fields.

V. N. Markov; Yu. M. Pis'mak

2006-06-04T23:59:59.000Z

198

TI--CR--AL--O thin film resistors  

DOE Patents (OSTI)

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Jankowski, Alan F. (Livermore, CA); Schmid, Anthony P. (Solana Beach, CA)

2000-01-01T23:59:59.000Z

199

Calcium Film Based Testing of Edge-Seal Materials for Photovoltaic Applications (Presentation)  

SciTech Connect

Because of the sensitivity of some photovoltaic devices to moisture-induced corrosion, they are packaged using impermeable front- and back-sheets with an edge seal to prevent moisture ingress. Evaluation of edge seal materials can be difficult because of the low permeation rates involved and/or non-Fickian behavior. Here, using a Ca film deposited on a glass substrate, we demonstrate the evaluation of edge seal materials in a manner that effectively duplicates their use in a photovoltaic application and compare the results with standard methods for measuring water vapor transport. We demonstrate how moisture permeation data from polymer films can be used to estimate moisture ingress rates and compare the results of these two methods. Encapsulant materials were also evaluated for comparison and to highlight the need for edge seals. Of the materials studied, dessicant-filled polyisobutene materials demonstrate by far the best potential to keep moisture out for a 20 to 30 year lifetime.

Kempe, M.; Dameron, A.; Reese, M.

2011-04-01T23:59:59.000Z

200

Functionalized multilayer thin films for protection against acutely toxic agents  

E-Print Network (OSTI)

The recently developed practice of spraying polyelectrolyte solutions onto a substrate in order to construct thin films via the Layer-by-Layer (LbL) technique has been further investigated and extended. In this process a ...

Krogman, Kevin Christopher

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Laser scribing of CIGS based thin films solar cells  

Science Journals Connector (OSTI)

Laser scribing tests on CIGS based thin films solar cells have been performed. The obtained high quality incisions show that laser scribing is a valuable tool for producing low-cost...

Sozzi, Michele; Menossi, Daniele; Bosio, Alessio; Cucinotta, Annamaria; Romeo, Nicola; Selleri, Stefano

202

National High Magnetic Field Laboratory: Magnetic Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

recorded work with magnetic thin films took place in the 1880s and was carried out by German physicist August Kundt. Well known for his research on sound and optics, Kundts...

203

Picosecond laser ablation of nano-sized WTi thin film  

Science Journals Connector (OSTI)

Interaction of an Nd:YAG laser, operating at 532 nm wavelength and pulse duration of 40 ps, with tungsten-titanium (WTi) thin film (thickness, 190 nm)...2...were found to be sufficient for modification of the WTi

S. Petrovi?; B. Gakovi?; D. Peruško; T. Desai; D. Batani; M. ?ekada…

2009-08-01T23:59:59.000Z

204

Quasi-Reversible Oxygen Exchange of Amorphous IGZO Thin Films  

E-Print Network (OSTI)

Center In situ electrical properties of a-IGZO thin films were carried out at 200ºC as a function of carrier content vs. pO2) analysis should be applicable for studying the underlying carrier generation

Shahriar, Selim

205

Flexible, transparent thin film transistors raise hopes for flexible...  

NLE Websites -- All DOE Office Websites (Extended Search)

screens and displays. Virtually all flat-screen TVs and smartphones are made up of thin film transistors today; they form the basis of both LEDs and LCDs (liquid crystal...

206

Role of Microstructural Phenomena in Magnetic Thin Films. Final Report  

SciTech Connect

Over the period of the program we systematically varied microstructural features of magnetic thin films in an attempt to better identify the role which each feature plays in determining selected extrinsic magnetic properties. This report summarizes the results.

Laughlin, D. E.; Lambeth, D. N.

2001-04-30T23:59:59.000Z

207

Self-Assembling Process for Fabricating Tailored Thin Films  

ScienceCinema (OSTI)

A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

Sandia

2009-09-01T23:59:59.000Z

208

Self-Assembling Process for Fabricating Tailored Thin Films  

ScienceCinema (OSTI)

A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

None

2010-01-08T23:59:59.000Z

209

Initiated chemical vapor deposition of functional polyacrylic thin films  

E-Print Network (OSTI)

Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

Mao, Yu, 1975-

2005-01-01T23:59:59.000Z

210

Direct printing of lead zirconate titanate thin films  

E-Print Network (OSTI)

Thus far, use of lead zirconate titanate (PZT) in MEMS has been limited due to the lack of process compatibility with existing MEMS manufacturing techniques. Direct printing of thin films eliminates the need for photolithographic ...

Bathurst, Stephen, 1980-

2008-01-01T23:59:59.000Z

211

A Review of Thin Film Silicon for Solar Cell Applications  

E-Print Network (OSTI)

A Review of Thin Film Silicon for Solar Cell Applications May 99 Contents 1 Introduction 3 2 Low 2.2.3 Deposition onto foreign substrates with the intention of improving crystallographic nature Field Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 11

212

Peeling Back the Layers of Thin Film Structure and Chemistry  

NLE Websites -- All DOE Office Websites (Extended Search)

July 10, 2014 Bookmark and Share The layer-by-layer analysis of the concentration of strontium within a 40-angstrom thick (La, Sr)CoO thin film applied to a SiTiO3 substrate....

213

Thin diamond films provide new material for micro-machines |...  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin diamond films provide new material for micro-machines By Jared Sagoff * July 31, 2014 Tweet EmailPrint ARGONNE, Ill. - Airbags, inkjet printers and video projectors may not...

214

Modeling of thin-film solar thermoelectric generators  

E-Print Network (OSTI)

Recent advances in solar thermoelectric generator (STEG) performance have raised their prospect as a potential technology to convert solar energy into electricity. This paper presents an analysis of thin-film STEGs. ...

Weinstein, Lee Adragon

215

Nanostructured thin films for solid oxide fuel cells  

E-Print Network (OSTI)

The goals of this work were to synthesize high performance perovskite based thin film solid oxide fuel cell (TF-SOFC) cathodes by pulsed laser deposition (PLD), to study the structural, electrical and electrochemical properties of these cathodes...

Yoon, Jongsik

2009-05-15T23:59:59.000Z

216

Monolithic integration of thin-film coolers with optoelectronic devices  

E-Print Network (OSTI)

Monolithic integration of thin-film coolers with optoelectronic devices Christopher La Barbara, California 93106-9560 Abstract. Active refrigeration of optoelectronic components through the use manuscript received June 30, 2000; accepted for publication June 30, 2000. 1 Introduction Optoelectronic

217

Enabling integration of vapor-deposited polymer thin films  

E-Print Network (OSTI)

Initiated Chemical Vapor Deposition (iCVD) is a versatile, one-step process for synthesizing conformal and functional polymer thin films on a variety of substrates. This thesis emphasizes the development of tools to further ...

Petruczok, Christy D. (Christy Danielle)

2014-01-01T23:59:59.000Z

218

Properties and sensor performance of zinc oxide thin films  

E-Print Network (OSTI)

Reactively sputtered ZnO thin film gas sensors were fabricated onto Si wafers. The atmosphere dependent electrical response of the ZnO micro arrays was examined. The effects of processing conditions on the properties and ...

Min, Yongki, 1965-

2003-01-01T23:59:59.000Z

219

Thin, Free-Standing Films For High Resolution Neutron Imaging.  

E-Print Network (OSTI)

??Thin, free-standing boro-phosphosilicate glass (BPSG) films were fabricated at PSU Nanofab to serve as prototype neutron converters for a proposed high resolution neutron imaging system… (more)

Trivelpiece, Cory

2010-01-01T23:59:59.000Z

220

Magnetic Skyrmion Phase in MnSi Thin Films.  

E-Print Network (OSTI)

??Detailed magnetometry and polarized neutron reflectometry studies were conducted on MnSi thin films grown epitaxially on Si(111) substrates. It is demonstrated that with an in-plane… (more)

Wilson, Murray

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Templated dewetting of thin solid films  

E-Print Network (OSTI)

The dewetting of solid metal polycrystalline films to form metal nanoparticles occurs by the nucleation and growth of holes in the film. For typical films on flat substrates, this process is not well-controlled and results ...

Giermann, Amanda L. (Amanda Leah)

2009-01-01T23:59:59.000Z

222

Photovoltaic Technology: The Case for Thin-Film Solar Cells  

Science Journals Connector (OSTI)

...reached the stage of large-scale production...allows for deposition of large areas (up to 1-m2-or...fivefold with the VHF plasma method (35); TCO costs...frequency (RF) of 13.56-MHz. [View Larger Version of this Image...

A. Shah; P. Torres; R. Tscharner; N. Wyrsch; H. Keppner

1999-07-30T23:59:59.000Z

223

Photovoltaic Technology: The Case for Thin-Film Solar Cells  

Science Journals Connector (OSTI)

...obtained by plasma-enhanced...the very high frequency (VHF) plasma deposition...at 13.56 MHz and for deposition temperatures...operated at the radio frequency (RF) of 13...with the VHF plasma method...operated at the radio frequency (RF) of 13.56-MHz. [View...

A. Shah; P. Torres; R. Tscharner; N. Wyrsch; H. Keppner

1999-07-30T23:59:59.000Z

224

Photo-Alignment Behavior of Mesoporous Silica Thin Films Synthesized on a Photo-Cross-Linkable Polymer Film  

Science Journals Connector (OSTI)

Photo-Alignment Behavior of Mesoporous Silica Thin Films Synthesized on a Photo-Cross-Linkable Polymer Film ... Photo-aligning and micropatterning techniques for mesochannels of a silica thin film using a photo-cross-linkable polymer film with a cinnamoyl group are proposed. ... We propose herein a new photo-aligning and micropatterning technique for mesochannels of a silica thin film using a photo-cross-linkable polymer film with a cinnamoyl group. ...

Haruhiko Fukumoto; Shusaku Nagano; Nobuhiro Kawatsuki; Takahiro Seki

2006-02-11T23:59:59.000Z

225

Understanding Thin Film Structure for the Rational Design of  

NLE Websites -- All DOE Office Websites (Extended Search)

Understanding Thin Film Structure for the Rational Design of Understanding Thin Film Structure for the Rational Design of High-performance Organic Semiconductors for Plastic Electronics Organic semiconductors are attracting considerable research interest due to their potential applications in low-cost electronics such as organic light emitting diode (OLED) displays, RF identification tags (RFID), smart cards and electronic paper. The development of p-conjugated materials, which are composed of alternating single and double chemical bonds, are the foundation of these applications. In the past decade research in this field has progressed to the extent that desirable charge transport in the organic semiconductor film in organic thin film transistors (OTFT) can be achieved through molecular design by selective placement of electron-rich, electron-withdrawing, and aromatic groups in different parts of the molecule. Although the electronic properties are easily tuned by molecular design, the molecular packing within the thin film and the film microstructure have a significant influence on the OTFT performance. Despite this importance, this interrelationship between molecular structure, thin film molecular packing and charge transport are only poorly understood.

226

Geometric shape control of thin film ferroelectrics and resulting structures  

DOE Patents (OSTI)

A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

227

Author's personal copy Magnetotransport properties of thin CFe films  

E-Print Network (OSTI)

Author's personal copy Magnetotransport properties of thin C­Fe films J.C. Prestigiacomo a , K The magnetotransport properties of C­Fe films formed by e-beam vapor deposition onto glass substrates are presented, and metastable iron carbide CFe3 [1]. In practice, varying compositions of metastable phases can be trapped via

Adams, Philip W.

228

Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell  

E-Print Network (OSTI)

We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

Li, Tong; Jiang, Chun

2010-01-01T23:59:59.000Z

229

Formation and ferromagnetic properties of FeSi thin films  

SciTech Connect

In this work, the growth and ferromagnetic properties of {epsilon}-FeSi thin film on Si(100) substrate prepared by molecular beam epitaxy are reported. The inter-diffusion of Fe layer on Si(100) substrate at 600 Degree-Sign C results in polycrystalline {epsilon}-FeSi layer. The determined activation energy was 0.044 eV. The modified magnetism from paramagnetic in bulk to ferromagnetic states in {epsilon}-FeSi thin films was observed. The saturated magnetization and coercive field of {epsilon}-FeSi film are 4.6 emu/cm{sup 3} and 29 Oe at 300 K, respectively.

Shin, Yooleemi; Anh Tuan, Duong; Hwang, Younghun; Viet Cuong, Tran; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of)

2013-05-07T23:59:59.000Z

230

Shape variation of micelles in polymer thin films  

SciTech Connect

The equilibrium properties of block copolymer micelles confined in polymer thin films are investigated using self-consistent field theory. The theory is based on a model system consisting of AB diblock copolymers and A homopolymers. Two different methods, based on the radius of gyration tensor and the spherical harmonics expansion, are used to characterize the micellar shape. The results reveal that the morphology of micelles in thin films depends on the thickness of the thin films and the selectivity of the confining surfaces. For spherical (cylindrical) micelles, the spherical (cylindrical) symmetry is broken by the presence of the one-dimensional confinement, whereas the top-down symmetry is broken by the selectivity of the confining surfaces. Morphological transitions from spherical or cylindrical micelles to cylinders or lamella are predicted when the film thickness approaches the micellar size.

Zhou, Jiajia, E-mail: zhou@uni-mainz.de; Shi, An-Chang, E-mail: shi@mcmaste.ca [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)] [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)

2014-01-14T23:59:59.000Z

231

Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

Mickelsen, R.A.; Chen, W.S.

1985-08-13T23:59:59.000Z

232

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Mickelsen, Reid A. (Bellevue, WA) [Bellevue, WA; Chen, Wen S. (Seattle, WA) [Seattle, WA

1985-08-13T23:59:59.000Z

233

An analysis of the photovoltaic value chain for reviewing solar energy policy in Massachusetts .  

E-Print Network (OSTI)

??We explore the photovoltaic value chain for 1st generation crystalline silicon, 2nd generation thin film and 3rd generation organic/ dye-sensitized PV in an effort to… (more)

Dean, Ryan, S. B. (Ryan G.) Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

234

An analysis of the photovoltaic value chain for reviewing solar energy policy in Massachusetts  

E-Print Network (OSTI)

We explore the photovoltaic value chain for 1st generation crystalline silicon, 2nd generation thin film and 3rd generation organic/ dye-sensitized PV in an effort to evaluate two levels of policy options intended to create ...

Dean, Ryan, S. B. (Ryan G.) Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

235

Elucidating efficiency losses in cuprous oxide (Cu?O) photovoltaics and identifying strategies for efficiency improvement  

E-Print Network (OSTI)

In this thesis, I fabricated and characterized a series of thin-film cuprous oxide (Cu?O) photovoltaic devices. I constructed several different device designs, using sputtered and electrochemically deposited Cu?O. ...

Brandt, Riley Eric

2013-01-01T23:59:59.000Z

236

Thin-film transistors based on p-type Cu{sub 2}O thin films produced at room temperature  

SciTech Connect

Copper oxide (Cu{sub 2}O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu{sub 2}O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm{sup 2}/V s and an on/off ratio of 2x10{sup 2}.

Fortunato, Elvira; Figueiredo, Vitor; Barquinha, Pedro; Elamurugu, Elangovan; Goncalves, Goncalo; Martins, Rodrigo [Departamento de Ciencia dos Materiais, CENIMAT/I3N, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, 2829-516 Caparica (Portugal); Barros, Raquel [Departamento de Ciencia dos Materiais, CENIMAT/I3N, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, 2829-516 Caparica (Portugal); Materiais Avancados, INNOVNANO, SA, 7600-095 Aljustrel (Portugal); Park, Sang-Hee Ko; Hwang, Chi-Sun [Electronic and Telecommunications Research Institute, 138 Gajeongro, Yuseong-gu, Daejeon, 305-700 (Korea, Republic of)

2010-05-10T23:59:59.000Z

237

Critical confinement and elastic instability in thin solid films  

E-Print Network (OSTI)

When a flexible plate is peeled off a thin and soft elastic film bonded to a rigid support, uniformly spaced fingering patterns develop along their line of contact. While, the wavelength of these patterns depends only on the thickness of the film, their amplitude varies with all material and geometric properties of the film and that of the adhering plate. Here we have analyzed this instability by the regular perturbation technique to obtain the excess deformations of the film over and above the base quantities. Furthermore, by calculating the excess energy of the system we have shown that these excess deformations, associated with the instability, occur for films which are critically confined. We have presented two different experiments for controlling the degree of confinement: by pre-stretching the film and by adjusting the contact width between the film and the plate.

Animangsu Ghatak; Manoj K. Chaudhury

2007-01-11T23:59:59.000Z

238

Plasmonic Light Trapping in an Ultrathin Photovoltaic Layer with Film-Coupled Metamaterial Structures  

E-Print Network (OSTI)

A film-coupled metamaterial structure is numerically investigated for enhancing the light absorption in an ultrathin photovoltaic layer of crystalline gallium arsenide (GaAs). The top subwavelength concave grating and the bottom metallic film could not only effectively trap light with the help of wave interference and magnetic resonance effects excited above the bandgap, but also practically serve as electrical contacts for photon-generated charge collection. The energy absorbed by the active layer is greatly enhanced in the film-coupled metamaterial structure, resulting in significant enhancement on the short-circuit current density by three times over a free-standing GaAs layer at the same thickness. The results would facilitate the development of next-generation ultrathin solar cells with lower cost and higher efficiency.

Wang, Hao

2014-01-01T23:59:59.000Z

239

Photoresponse of Tb{sup 3+} doped phosphosilicate thin films  

SciTech Connect

Phosphosilicate ceramic was doped with Tb{sup 3+} using sol-gel technique to prepare thin films. The films were prepared by spin coating the phosphosilicate sols on SiO{sub x}/indium-tin-oxide/glass substrates. The photocurrent of the films at 355 nm laser excitation was observed. The photoresponse as a function of applied field and laser energy was linear and showed no sign of saturation. The films exhibited very stable photoresponse under a very high number of laser shots.

Lee, B.L.; Cao, Z. [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering] [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering; Sisk, W.N.; Hudak, J. [Univ. of North Carolina, Charlotte, NC (United States)] [Univ. of North Carolina, Charlotte, NC (United States); Samuels, W.D.; Exarhos, G.J. [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science] [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science

1997-09-01T23:59:59.000Z

240

Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance  

SciTech Connect

We report on CdS/CdTe photovoltaic devices that contain a thin Ta2O5 film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta2O5 films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta2O5 interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta2O5 interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.

Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor

2012-05-05T23:59:59.000Z

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Boron arsenide thin film solar cell development. Final report  

SciTech Connect

Pyrolytic decomposition of diborane and arsine has been used in attempts to grow polycrystalline BAs films. This method, however, produced only amorphous films for deposition temperatures below 920/sup 0/C and polycrystalline boron subarsenide (B/sub 12/As/sub 2/) flms for deposition temperatures above this value. The amorphous films have been determined to have a significant arsenic content but the actual stoichiometry was not obtained. The films were adherent on single crystal sapphire (0001), (111) silicon, (0001) SiC, and polycrystalline SiC but were found not to be adherent to substrates of fused quartz, tungsten, and molybdenum. It was also found that all films deposited above 650/sup 0/C were p-type while those deposited below 600/sup 0/C were usually n-type. Polycrystalline BAs and B/sub 12/As/sub 2/ was produced by reaction of the elements in a closed tube. The amorphous films showed an indirect or non-direct optical bandgap from 1.0 to 1.7 eV with the most probable values between 1.2 to 1.4 eV. The crystalline BAs powder shows a bandgap near 1.0 eV. Photoconductance time constants have been measured for films deposited on (0001) sapphire and (0001) SiC. Attempts at doping the amorphous films were generally unsuccessful. A polycrystalline powder sample was successfully doped with sulfur. Attempts were made to produce a Schottky barrier diode by evaporating Al dots onto an amorphous film on graphite without a post-evaporation anneal. An MIS structure was also attempted by baking an amorphous film in air at 280/sup 0/C before evaporation of aluminum. Although nonlinear characteristics were obtained, none of the devices showed any photovoltaic response. A p-type amorphous film was deposited on an n-type silicon substrate to form a p-n heterojunction. This device did exhibit a photovoltaic response but it is believed that the photogeneration was occurring primarily in the silicon substrate.

Boone, J.L.; Van Doren, T.P.

1980-09-01T23:59:59.000Z

242

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

243

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

244

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

245

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

246

Biocompatibility of Pristine Graphene Monolayers, Nanosheets and Thin Films  

E-Print Network (OSTI)

There is an increasing interest to develop nanoscale biocompatible graphene structures due to their desirable physicochemical properties, unlimited application opportunities and scalable production. Here we report the preparation, characterization and biocompatibility assessment of novel graphene flakes and their enabled thin films suitable for a wide range of biomedical and electronic applications. Graphene flakes were synthesized by a chemical vapour deposition method or a liquid-phase exfoliation procedure and then thin films were prepared by transferring graphene onto glass coverslips. Raman spectroscopy and transmission electron microscopy confirmed a predominantly monolayer and a high crystalline quality formation of graphene. The biocompatibility assessment of graphene thin films and graphene flakes was performed using cultured human lung epithelial cell line A549 employing a multimodal approach incorporating automated imaging, high content screening, real-time impedance sensing in combination with bio...

Conroy, Jennifer; Smith, Ronan J; Rezvani, Ehsan; Duesberg, Georg S; Coleman, Jonathan N; Volkov, Yuri

2014-01-01T23:59:59.000Z

247

Electrochromism in copper oxide thin films  

E-Print Network (OSTI)

by a variety of routes, and electrochromic behavior has beenof Cu x O films, electrochromic devices based onbeen investigated. Unlike electrochromic devices based on

Richardson, Thomas J.; Slack, Jonathan L.; Rubin, Michael D.

2000-01-01T23:59:59.000Z

248

Photovoltaic mechanism in Na-substituted BiFeO3 films  

Science Journals Connector (OSTI)

Na-substituted BiFeO3 films were prepared on FTO/glass substrates using the sol–gel method. XRD results showed that all films adopted random orientation and an R3m perovskite structure. UV–Vis absorption results indicated that the films exhibited intense absorbance around 450 nm. The band gaps were 2.59 eV, 2.63 eV, 2.62 eV and 2.52 eV for the films substituted with 0%, 5%, 10% and 20% Na, respectively. A substantially enhanced photovoltaic effect was observed in the 20% Na substituted BiFeO3 film; its short-circuit current density was 1.26 µA cm?2 and the open circuit voltage was ?0.66 V. Meanwhile, polarization-modulated Jsc and Voc were observed in the 20% Na substituted BiFeO3 film and the mechanism was studied using the Schottky barrier combined with the ferroelectric polarization model.

Chengyan Wang; Xingyun Liu; Su Sheng; Yong Zhou; Hongri Liu; Yuxia Sun

2014-01-01T23:59:59.000Z

249

Phase assembly and photo-induced current in CdTe-ZnO nanocomposite thin films  

SciTech Connect

Sequential radio-frequency sputtering was used to produce CdTe-ZnO nanocomposite thin films with varied semiconductor-phase extended structures. Control of the spatial distribution of CdTe nanoparticles within the ZnO embedding phase was used to influence the semiconductor phase connectivity, contributing to both changes in quantum confinement induced spectral absorption and carrier transport characteristics of the resulting nanocomposite. An increased number density of CdTe particles deposited along the applied field direction produced an enhancement in the photo-induced current observed. These results highlight the opportunity to employ long-range phase assembly as a means to control optoelectronic properties of significant interest for photovoltaic applications.

Beal, R. J.; Kana Kana, J. B. [Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721 (United States); Potter, B. G. Jr. [Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States)

2012-07-16T23:59:59.000Z

250

ZnO/Sn:In2O3 and ZnO/CdTe band offsets for extremely thin absorber photovoltaics  

SciTech Connect

Band alignments were measured by x-ray photoelectron spectroscopy for thin films of ZnO on polycrystalline Sn:In2O3 (ITO) and single crystal CdTe. Hybrid density functional theory calculations of epitaxial zinc blende ZnO(001) on CdTe(001) were performed to compare with experiment. A conduction band offset of -0.6 eV was measured for ZnO/ITO, which is larger than desired for efficient electron injection. For ZnO/CdTe, the experimental conduction band offset of 0.25 eV is smaller than the calculated value of 0.67 eV, likely due to the TeOx layer at the ZnO/CdTe interface. The measured conduction band offset for ZnO/CdTe is favorable for photovoltaic devices.

Kaspar, Tiffany C.; Droubay, Timothy C.; Jaffe, John E.

2011-12-28T23:59:59.000Z

251

Surface acoustic wave interaction with thin magnetic films  

Science Journals Connector (OSTI)

It has been found that surface acoustic waves(SAW) exhibit a very large interaction with appropriately prepared thin magnetic films through the magnetoelasticeffect. For a 600 Å 90Ni 10Fe thin film the interaction can produce changes in attenuation of 30 dB/cm at 700 MHz by changing from 2 to 12 G a magnetic field applied parallel to the film plane and perpendicular to the SAW.Measurements of the frequency dependence of this large effect yield values for the Gilbert damping constant and the anisotropy field. This interaction has been studied in the series of xNi (1 ? x)Fe alloy films. For x > 80 wt % the magnetoelastic constant ? is negative. It is positive for x Science Foundation under Grant No. ESC 8519695.

Moises Levy; Roy Wiegert

1986-01-01T23:59:59.000Z

252

Photovoltaic cell  

DOE Patents (OSTI)

In a photovoltaic cell structure containing a visibly transparent, electrically conductive first layer of metal oxide, and a light-absorbing semiconductive photovoltaic second layer, the improvement comprising a thin layer of transition metal nitride, carbide or boride interposed between said first and second layers.

Gordon, Roy G. (Cambridge, MA); Kurtz, Sarah (Somerville, MA)

1984-11-27T23:59:59.000Z

253

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents (OSTI)

A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

1998-02-03T23:59:59.000Z

254

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents (OSTI)

A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

Mitlitsky, Fred (Livermore, CA); Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Colella, Nicholas J. (Livermore, CA)

1998-02-03T23:59:59.000Z

255

Thin-film tin oxideâ??ethanol sensor  

Science Journals Connector (OSTI)

Tin Oxide (SnO2) thin films grown on glass substrate at 648 K using direct evaporation method with two gold pads deposited on the top for electrical contacts were exposed to ethanol vapours (200-1000 ppm). The operating temperature of the sensor was optimised. The sensitivity variation of films having different thicknesses was studied. To improve the sensitivity and selectivity further, a thin layer of metal oxide was deposited on the sensor surface to work as a catalytic layer and its effect on the performance of the sensor was studied. The response and recovery times of the sensor were determined.

H.J. Pandya

2009-01-01T23:59:59.000Z

256

Perovskite phase thin films and method of making  

DOE Patents (OSTI)

The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

Boyle, Timothy J. (Albuquerque, NM); Rodriguez, Mark A. (Albuquerque, NM)

2000-01-01T23:59:59.000Z

257

Two-color Laser Desorption of Nanostructured MgO Thin Films....  

NLE Websites -- All DOE Office Websites (Extended Search)

Two-color Laser Desorption of Nanostructured MgO Thin Films. Two-color Laser Desorption of Nanostructured MgO Thin Films. Abstract: Neutral magnesium atom emission from...

258

Initiated chemical vapor deposition of polymeric thin films : mechanism and applications  

E-Print Network (OSTI)

Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness ...

Chan, Kelvin, Ph. D. Massachusetts Institute of Technology

2005-01-01T23:59:59.000Z

259

Anisotropic dewetting in ultra-thin single-crystal silicon-on-insulator films  

E-Print Network (OSTI)

The single crystal silicon-on-insulator thin film materials system represents both an ideal model system for the study of anisotropic thin film dewetting as well as a technologically important system for the development ...

Danielson, David T. (David Thomas)

2008-01-01T23:59:59.000Z

260

Trend Detection on Thin-Film Solar Cell Technology Using Cluster Analysis and Modified Data Crystallization  

Science Journals Connector (OSTI)

Thin-film solar cell, one of green energies, is growing ... . To detect the potential trends of this technology is essential for companies and relevant industries ... patterns, the potential trends of thin-film solar

Tzu-Fu Chiu; Chao-Fu Hong; Yu-Ting Chiu

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Thin-film solar cells: review of materials, technologies and commercial status  

Science Journals Connector (OSTI)

As apparent from Table 1..., showing the production volume for different manufacturers of these thin-film technologies over the past 3 years, rapidly-growing ... are also increasing rapidly, the thin-film technologies

Martin A. Green

2007-10-01T23:59:59.000Z

262

Quench Properties and Fault Current Limiters of YBCO Thin-Film Superconductors  

Science Journals Connector (OSTI)

We measured the current dependence of quench propagation velocities in strip-shaped YBCO thin films and the current-limiting properties of fault current limiters consisting of a YBCO thin film and ... -300 cm/sec...

Hiroshi Kubota; Yuki Kudo; Mutsuki Yamazaki…

1998-01-01T23:59:59.000Z

263

E-Print Network 3.0 - advanced thin film Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

half of all glass... cells by absorbing light within a specific wavelength. Today's thin-film solar cells could not function... , but static, layer of a thin-film pho- tovoltaic...

264

High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing  

E-Print Network (OSTI)

One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

265

Influence of samaria doping on the resistance of ceria thin films...  

NLE Websites -- All DOE Office Websites (Extended Search)

doping on the resistance of ceria thin films and its implications to the planar oxygen sensing devices. Influence of samaria doping on the resistance of ceria thin films and...

266

Growth of Epitaxial Thin Pd(111) Films on Pt(111) and Oxygen...  

NLE Websites -- All DOE Office Websites (Extended Search)

Growth of Epitaxial Thin Pd(111) Films on Pt(111) and Oxygen-Terminated FeO(111) Surfaces . Growth of Epitaxial Thin Pd(111) Films on Pt(111) and Oxygen-Terminated FeO(111)...

267

Generation of low work function, stable compound thin films by laser ablation  

DOE Patents (OSTI)

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

2001-01-01T23:59:59.000Z

268

Preparation of a semiconductor thin film  

DOE Patents (OSTI)

A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, Martin (TuBingen, DE); Schulz, Douglas L. (Denver, CO); Curtis, Calvin J. (Lakewood, CO); Ginley, David S. (Evergreen, CO)

1998-01-01T23:59:59.000Z

269

Preparation of a semiconductor thin film  

DOE Patents (OSTI)

A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Ginley, D.S.

1998-01-27T23:59:59.000Z

270

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

SciTech Connect

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

271

Highly conductive p-type microcrystalline silicon thin films  

SciTech Connect

In the development of thin film solar cells there is presently an increasing interest in microcrystalline silicon, deposited at low temperatures (200--400 C). The plasma deposition of boron doped microcrystalline films was optimized with respect to crystallinity and doping efficiency. High room temperature conductivities up to 39 Scm{sup {minus}1} were achieved under condition when the energy of positive ions impinging on the growth surface is minimized.

Heintze, M.; Schmitt, M. [Univ. Stuttgart (Germany). Inst. fuer Physikalische Elektronik

1996-12-31T23:59:59.000Z

272

Method for producing high quality thin layer films on substrates  

DOE Patents (OSTI)

A method for producing high quality, thin layer films of inorganic compounds upon the surface of a substrate is disclosed. The method involves condensing a mixture of preselected molecular precursors on the surface of a substrate and subsequently inducing the formation of reactive species using high energy photon or charged particle irradiation. The reactive species react with one another to produce a film of the desired compound upon the surface of the substrate.

Strongin, Myron (Center Moriches, NY); Ruckman, Mark (Middle Island, NY); Strongin, Daniel (Port Jefferson, NY)

1994-01-01T23:59:59.000Z

273

Method for producing high quality thin layer films on substrates  

DOE Patents (OSTI)

A method for producing high quality, thin layer films of inorganic compounds upon the surface of a substrate is disclosed. The method involves condensing a mixture of preselected molecular precursors on the surface of a substrate and subsequently inducing the formation of reactive species using high energy photon or charged particle irradiation. The reactive species react with one another to produce a film of the desired compound upon the surface of the substrate. 4 figures.

Strongin, M.; Ruckman, M.; Strongin, D.

1994-04-26T23:59:59.000Z

274

Fabrication and testing of thermoelectric thin film devices  

SciTech Connect

Two thin-film thermoelectric devices are experimentally demonstrated. The relevant thermal loads on the cold junction of these devices are determined. The analytical form of the equation that describes the thermal loading of the device enables one to model the performance based on the independently measured electronic properties of the films forming the devices. This model elucidates which parameters determine device performance, and how they can be used to maximize performance.

Wagner, A.V.; Foreman, R.J.; Summers, L.J.; Barbee, T.W. Jr.; Farmer, J.C. [Lawrence Livermore National Lab., CA (United States). Chemistry and Materials Science Dept.

1996-03-01T23:59:59.000Z

275

Nonequilibrium behavior of thin polymer films  

Science Journals Connector (OSTI)

The rheological behavior of 100-nm-thick polystyrene films cast from various solvents was examined using an electric field to weakly perturb the free surface of the polymer melt. The effective viscosity and residual stresses of the as-spun films are seen to strongly depend on the properties of the casting solvent and the solvent quality. Both effects are explained in terms of the coil dimension at the solvent-polymer composition at which the film vitrifies. The more compact chains in a near-?-solvent are less entangled and less deformed when quenched to the dry melt compared to the more swollen chains in an athermal solution. Despite chain conformations that are further from equilibrium for the ?-solvent cast chains, these films have reduced stored stresses compared to the chains cast in films from athermal solvents. A more detailed analysis of the data suggests that the formation of a surface-near region with more strongly deformed chains during spin coating. Since thermal equilibration of spin-cast high-molecular-weight films is unpractical, solvent vapor annealing was used to equilibrate films on timescale of a few hours.

Katherine R. Thomas; Alexis Chenneviere; Günter Reiter; Ullrich Steiner

2011-02-28T23:59:59.000Z

276

Nantong Qiangsheng Photovoltaic Technology Co Ltd QS Solar | Open Energy  

Open Energy Info (EERE)

Nantong Qiangsheng Photovoltaic Technology Co Ltd QS Solar Nantong Qiangsheng Photovoltaic Technology Co Ltd QS Solar Jump to: navigation, search Name Nantong Qiangsheng Photovoltaic Technology Co Ltd (QS Solar) Place Shanghai Municipality, China Zip 200336 Sector Solar Product Chinese amorphous thin-film solar cell maker. References Nantong Qiangsheng Photovoltaic Technology Co Ltd (QS Solar)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Nantong Qiangsheng Photovoltaic Technology Co Ltd (QS Solar) is a company located in Shanghai Municipality, China . References ↑ "[ Nantong Qiangsheng Photovoltaic Technology Co Ltd (QS Solar)]" Retrieved from "http://en.openei.org/w/index.php?title=Nantong_Qiangsheng_Photovoltaic_Technology_Co_Ltd_QS_Solar&oldid=349037

277

B{sub 4}C thin films for neutron detection  

SciTech Connect

Due to the very limited availability of {sup 3}He, new kinds of neutron detectors, not based on {sup 3}He, are urgently needed. Here, we present a method to produce thin films of {sup 10}B{sub 4}C, with maximized detection efficiency, intended to be part of a new generation of large area neutron detectors. B{sub 4}C thin films have been deposited onto Al-blade and Si wafer substrates by dc magnetron sputtering from {sup nat}B{sub 4}C and {sup 10}B{sub 4}C targets in an Ar discharge, using an industrial deposition system. The films were characterized with scanning electron microscopy, elastic recoil detection analysis, x-ray reflectivity, and neutron radiography. We show that the film-substrate adhesion and film purity are improved by increased substrate temperature and deposition rate. A deposition rate of 3.8 A/s and substrate temperature of 400 deg. C result in films with a density close to bulk values and good adhesion to film thickness above 3 {mu}m. Boron-10 contents of almost 80 at. % are obtained in 6.3 m{sup 2} of 1 {mu}m thick {sup 10}B{sub 4}C thin films coated on Al-blades. Initial neutron absorption measurements agree with Monte Carlo simulations and show that the layer thickness, number of layers, neutron wavelength, and amount of impurities are determining factors. The study also shows the importance of having uniform layer thicknesses over large areas, which for a full-scale detector could be in total {approx}1000 m{sup 2} of two-side coated Al-blades with {approx}1 {mu}m thick {sup 10}B{sub 4}C films.

Hoeglund, Carina [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linkoeping University, SE-581 83 Linkoeping (Sweden); Birch, Jens; Jensen, Jens; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linkoeping University, SE-581 83 Linkoeping (Sweden); Andersen, Ken; Hall-Wilton, Richard [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Bigault, Thierry; Buffet, Jean-Claude; Correa, Jonathan; Esch, Patrick van; Guerard, Bruno; Piscitelli, Francesco [Institute Laue Langevin, Rue Jules Horowitz, FR-380 00 Grenoble (France); Khaplanov, Anton [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Institute Laue Langevin, Rue Jules Horowitz, FR-380 00 Grenoble (France); Vettier, Christian [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); European Synchrotron Radiation Facility, BP 220, FR-380 43 Grenoble Cedex 9 (France); Vollenberg, Wilhelmus [Vacuum, Surfaces and Coatings Group (TE/VSC), CERN, CH-1211 Geneva 23 (Switzerland)

2012-05-15T23:59:59.000Z

278

B4C thin films for neutron detection  

Science Journals Connector (OSTI)

Due to the very limited availability of 3He new kinds of neutron detectors not based on 3He are urgently needed. Here we present a method to produce thin films of 10B4C with maximized detection efficiency intended to be part of a new generation of large area neutron detectors. B4C thin films have been deposited onto Al-blade and Si wafer substrates by dc magnetron sputtering from natB4C and 10B4C targets in an Ar discharge using an industrial deposition system. The films were characterized with scanning electron microscopy elastic recoil detection analysis x-ray reflectivity and neutron radiography. We show that the film-substrate adhesion and film purity are improved by increased substrate temperature and deposition rate. A deposition rate of 3.8?Å/s and substrate temperature of 400?°C result in films with a density close to bulk values and good adhesion to film thickness above 3 ?m. Boron-10 contents of almost 80 at. % are obtained in 6.3 m2 of 1 ?m thick 10B4C thin films coated on Al-blades. Initial neutron absorption measurements agree with Monte Carlo simulations and show that the layer thickness number of layers neutron wavelength and amount of impurities are determining factors. The study also shows the importance of having uniform layer thicknesses over large areas which for a full-scale detector could be in total ?1000 m2 of two-side coated Al-blades with ?1 ?m thick 10B4C films.

Carina Höglund; Jens Birch; Ken Andersen; Thierry Bigault; Jean-Claude Buffet; Jonathan Correa; Patrick van Esch; Bruno Guerard; Richard Hall-Wilton; Jens Jensen; Anton Khaplanov; Francesco Piscitelli; Christian Vettier; Wilhelmus Vollenberg; Lars Hultman

2012-01-01T23:59:59.000Z

279

Enhanced quantum efficiency of amorphous silicon thin film solar cells with the inclusion of a rear-reflector thin film  

SciTech Connect

We investigated the growth mechanism of amorphous silicon thin films by implementing hot-wire chemical vapor deposition and fabricated thin film solar cell devices. The fabricated cells showed efficiencies of 7.5 and 8.6% for the samples without and with the rear-reflector decomposed by sputtering, respectively. The rear-reflector enhances the quantum efficiency in the infrared spectral region from 550 to 750?nm. The more stable quantum efficiency of the sample with the inclusion of a rear-reflector than the sample without the rear-reflector due to the bias effect is related to the enhancement of the short circuit current.

Park, Seungil [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Yong Ji, Hyung; Jun Kim, Myeong; Hyeon Peck, Jong [Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Kim, Keunjoo, E-mail: kimk@chonbuk.ac.kr [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2014-02-17T23:59:59.000Z

280

High efficiency thin-film crystalline Si/Ge tandem solar cell  

Science Journals Connector (OSTI)

We propose and simulate a photovoltaic solar cell comprised of Si and Ge pn junctions in tandem. With an anti-reflection film at the front surface, we have shown that optimal solar...

Sun, G; Chang, F; Soref, R A

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

An integrated thin-film thermo-optic waveguide beam deflector Suning Tang,a)  

E-Print Network (OSTI)

An integrated thin-film thermo-optic waveguide beam deflector Suning Tang,a) Bulang Li, and Xinghua for publication 16 February 2000 We have demonstrated the operation of a thin-film thermo-optical beam deflector in a three-layer optical planar waveguide. The fabricated waveguide beam deflector consists of a thin-film Si

Chen, Ray

282

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network (OSTI)

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell hal-00749873,version1-25Nov shortage until 2010. Research on epitaxial growth for thin film crystalline silicon solar cells has gained

283

Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova*  

E-Print Network (OSTI)

1 Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova* , I be minimized throughout the fabrication process. Amorphous silicon thin-film transistors and solar cells, thin-film transistor, solar cell, flexible electronics Phone: (609) 258-4626, Fax: (609) 258-3585, E

284

EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS  

E-Print Network (OSTI)

EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS Yun Seog Lee 1; * Corresponding author: buonassisi@mit.edu; ABSTRACT We investigate earth abundant materials for thin- film solar cuprous oxide (Cu2O) as a prototype candidate for investigation as an absorber layer in thin film solar

Ceder, Gerbrand

285

LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle  

E-Print Network (OSTI)

LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle Physics response map, was developed and used to map defects in thin-film solar cells [4]. Improvements to the two) measurements are providing a direct link between the spatial non-uniformities inherent in thin-film

Sites, James R.

286

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

Sites, James R.

287

Plasmonic enhancement of thin-film solar cells using gold-black C.J. Fredricksena  

E-Print Network (OSTI)

Plasmonic enhancement of thin-film solar cells using gold-black coatings C.J. Fredricksena , D. R thin-film amorphous-silicon solar cells enhance the short-circuit current by 20% over a broad spectrum and locally enhance the field strength. Keywords: plasmonics, thin-film, solar cell, metallic nanoparticles

Peale, Robert E.

288

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell  

E-Print Network (OSTI)

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic­4]. In this context, a basic idea is to periodically texture the metallic back reflector of a thin-film solar cell

289

Extended light scattering model incorporating coherence for thin-film silicon solar cells  

E-Print Network (OSTI)

Extended light scattering model incorporating coherence for thin-film silicon solar cells Thomas film solar cells. The model integrates coherent light propagation in thin layers with a direct, non potential for light trapping in textured thin film silicon solar cells. VC 2011 American Institute

Lenstra, Arjen K.

290

Metal-black scattering centers to enhance light harvesting by thin-film solar cells  

E-Print Network (OSTI)

Metal-black scattering centers to enhance light harvesting by thin-film solar cells Deep Panjwania as scattering centers to increase the effective optical thickness of thin-film solar cells. The particular type. Gold-black was deposited on commercial thin-film solar cells using a thermal evaporator in nitrogen

Peale, Robert E.

291

Oriented niobate ferroelectric thin films for electrical and optical devices  

DOE Patents (OSTI)

Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or cyrstalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

Wessels, Bruce W. (Wilmette, IL); Nystrom, Michael J. (Chicago, IL)

2001-01-01T23:59:59.000Z

292

Control of magnetization reversal in oriented strontium ferrite thin films  

SciTech Connect

Oriented Strontium Ferrite films with the c axis orientation were deposited with varying oxygen partial pressure on Al{sub 2}O{sub 3}(0001) substrate using Pulsed Laser Deposition technique. The angle dependent magnetic hysteresis, remanent coercivity, and temperature dependent coercivity had been employed to understand the magnetization reversal of these films. It was found that the Strontium Ferrite thin film grown at lower (higher) oxygen partial pressure shows Stoner-Wohlfarth type (Kondorsky like) reversal. The relative importance of pinning and nucleation processes during magnetization reversal is used to explain the type of the magnetization reversal with different oxygen partial pressure during growth.

Roy, Debangsu, E-mail: debangsu@physics.iisc.ernet.in; Anil Kumar, P. S. [Department of Physics, Indian Institute of Science, Bangalore 560012 (India)

2014-02-21T23:59:59.000Z

293

Organic Thin Film Magnet of Nickel-Tetracyanoethylene  

SciTech Connect

Hybrid organic-inorganic materials consisting of a transition metal and an organic compound, TCNE form a unique class of organic magnets denoted by M(TCNE){sub x}(where M = transition metals, and TCNE = tetracyanoethylene). The organic thin film magnet of nickel-tetracyanoethylene, Ni(TCNE){sub x} is deposited on sputtered clean gold substrate using the physical vapor deposition (PVD) technique under ultra high vacuum (UHV) conditions at room temperature. X-ray photoelectron spectroscopy (XPS) has been used to investigate chemical and electronic properties of Ni(TCNE){sub x} film. XPS derived film thickness and stoichiometry are found to be 6 nm and 1:2 ratio between Ni and TCNE resulting Ni(TCNE){sub 2} film, respectively. In addition, XPS results do not show any signature of the presence of pure metallic Ni or Ni-clustering in the Ni(TCNE){sub x} film.

Bhatt, Pramod; Yusuf, S. M. [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

2011-07-15T23:59:59.000Z

294

Stripe Domain-Structures in a Thin Ferromagnetic Film  

E-Print Network (OSTI)

We present a theory of the stripe domain structure in a thin ferromagnetic film with single-ion easy-axis magnetic anisotropy and long-range dipole interactions, for a wide range of temperatures and applied magnetic field. The domains exist...

KASHUBA, AB; Pokrovsky, Valery L.

1993-01-01T23:59:59.000Z

295

Method of preparing thin film polymeric gel electrolytes  

DOE Patents (OSTI)

Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

Derzon, Dora K. (Albuquerque, NM); Arnold, Jr., Charles (Albuquerque, NM)

1997-01-01T23:59:59.000Z

296

Synthesis and Characterization of Functional Nanostructured Zinc Oxide Thin Films  

E-Print Network (OSTI)

.1149/1.2357098, copyright The Electrochemical Society 65 #12;66 reduced environmental impact and a minimum undesirable inter-temperature thin film growth technique has been developed to fabricate a new generation of smart and functional and structural requirements of their applications in gas sensors and solar cells. The rapid photothermal

Chow, Lee

297

Preparation and characterization of TL-based superconducting thin films  

E-Print Network (OSTI)

A simple method for growth of Tl-based superconducting thin films is described. In this method, the precursor was prepared in a vacuum chamber by deposition of Ba, Ca and Cu metals or a Ba-Ca alloy and Cu metal. The precursor was then oxidized...

Wang, Pingshu

2012-06-07T23:59:59.000Z

298

LIQUID PHASE DEPOSITION OF ELECTROCHROMIC THIN FILMS T. J. Richardson and M. D. Rubin  

E-Print Network (OSTI)

1 LIQUID PHASE DEPOSITION OF ELECTROCHROMIC THIN FILMS T. J. Richardson and M. D. Rubin electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared, and readily scalable to larger substrates. Keywords: liquid phase deposition; electrochromic films; thin film

299

EEC 289-L Photovoltaics and Solar Cells 3 Units Winter Quarter (Alternate Years)  

E-Print Network (OSTI)

strategies 4. Microcrystalline Si, and effects of defects on PV 5. Thin-Film Solar Cells a. -Si on glass bEEC 289-L Photovoltaics and Solar Cells 3 Units ­ Winter Quarter (Alternate Years) Prerequisite, and third-generation photovoltaics and solar cells, including design, fabrication technology, and grid

300

Photovoltaic Materials  

SciTech Connect

The goal of the current project was to help make the US solar industry a world leader in the manufacture of thin film photovoltaics. The overall approach was to leverage ORNL’s unique characterization and processing technologies to gain a better understanding of the fundamental challenges for solar cell processing and apply that knowledge to targeted projects with industry members. ORNL has the capabilities in place and the expertise required to understand how basic material properties including defects, impurities, and grain boundaries affect the solar cell performance. ORNL also has unique processing capabilities to optimize the manufacturing process for fabrication of high efficiency and low cost solar cells. ORNL recently established the Center for Advanced Thin-film Systems (CATS), which contains a suite of optical and electrical characterization equipment specifically focused on solar cell research. Under this project, ORNL made these facilities available to industrial partners who were interested in pursuing collaborative research toward the improvement of their product or manufacturing process. Four specific projects were pursued with industrial partners: Global Solar Energy is a solar industry leader in full scale production manufacturing highly-efficient Copper Indium Gallium diSelenide (CIGS) thin film solar material, cells and products. ORNL worked with GSE to develop a scalable, non-vacuum, solution technique to deposit amorphous or nanocrystalline conducting barrier layers on untextured stainless steel substrates for fabricating high efficiency flexible CIGS PV. Ferro Corporation’s Electronic, Color and Glass Materials (“ECGM”) business unit is currently the world’s largest supplier of metallic contact materials in the crystalline solar cell marketplace. Ferro’s ECGM business unit has been the world's leading supplier of thick film metal pastes to the crystalline silicon PV industry for more than 30 years, and has had operational cells and modules in the field for 25 years. Under this project, Ferro leveraged world leading analytical capabilities at ORNL to characterize the paste-to-silicon interface microstructure and develop high efficiency next generation contact pastes. Ampulse Corporation is developing a revolutionary crystalline-silicon (c-Si) thin-film solar photovoltaic (PV) technology. Utilizing uniquely-textured substrates and buffer materials from the Oak Ridge National Laboratory (ORNL), and breakthroughs in Hot-Wire Chemical Vapor Deposition (HW-CVD) techniques in epitaxial silicon developed at the National Renewable Energy Laboratory (NREL), Ampulse is creating a solar technology that is tunable in silicon thickness, and hence in efficiency and economics, to meet the specific requirements of multiple solar PV applications. This project focused on the development of a high rate deposition process to deposit Si, Ge, and Si1-xGex films as an alternate to hot-wire CVD. Mossey Creek Solar is a start-up company with great expertise in the solar field. The primary interest is to create and preserve jobs in the solar sector by developing high-yield, low-cost, high-efficiency solar cells using MSC-patented and -proprietary technologies. The specific goal of this project was to produce large grain formation in thin, net-shape-thickness mc-Si wafers processed with high-purity silicon powder and ORNL's plasma arc lamp melting without introducing impurities that compromise absorption coefficient and carrier lifetime. As part of this project, ORNL also added specific pieces of equipment to enhance our ability to provide unique insight for the solar industry. These capabilities include a moisture barrier measurement system, a combined physical vapor deposition and sputtering system dedicated to cadmium-containing deposits, adeep level transient spectroscopy system useful for identifying defects, an integrating sphere photoluminescence system, and a high-speed ink jet printing system. These tools were combined with others to study the effect of defects on the performance of crystalline silicon and

Duty, C.; Angelini, J.; Armstrong, B.; Bennett, C.; Evans, B.; Jellison, G. E.; Joshi, P.; List, F.; Paranthaman, P.; Parish, C.; Wereszczak, A.

2012-10-15T23:59:59.000Z

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor  

E-Print Network (OSTI)

The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

Nominanda, Helinda

2012-06-07T23:59:59.000Z

302

Photovoltaic Cell Material Basics | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Material Basics Material Basics Photovoltaic Cell Material Basics August 19, 2013 - 4:43pm Addthis Although crystalline silicon cells are the most common type, photovoltaic (PV), or solar cells, can be made of many semiconductor materials. Each material has unique strengths and characteristics that influence its suitability for specific applications. For example, PV cell materials may differ based on their crystallinity, bandgap, absorbtion, and manufacturing complexity. Learn more about each of these characteristics below or learn about these solar cell materials: Silicon (Si)-including single-crystalline Si, multicrystalline Si, and amorphous Si Polycrystalline Thin Films-including copper indium diselenide (CIS), cadmium telluride (CdTe), and thin-film silicon Single-Crystalline Thin Films-including high-efficiency material

303

Structure-stress-resistivity relationship in WTi alloy ultra-thin and thin films prepared by magnetron sputtering  

Science Journals Connector (OSTI)

WTi thin films were prepared from an alloyed target (W:Ti ? 70:30?at. %) by magnetron sputtering. Body-centered cubic W x T i 1 ? x solid solutions with a { 110 } fiber texture and columnar grains have been produced with 0.75 WTi thin films is about 60 ? 200 ? ? ? ? cm depending on the film thickness and microstructure (sputtering conditions). For both ultra-thin (9.5?nm) and thin (180?nm) films a stress transition from compressive to tensile is observed as the working pressure increases. The process-structure-property relations of the WTi ultra-thin and thin films are discussed in relation with the state of the art.

P.-O. Renault

2013-01-01T23:59:59.000Z

304

Institute of Photo Electronic Thin Film Devices and Technology of Nankai  

Open Energy Info (EERE)

Electronic Thin Film Devices and Technology of Nankai Electronic Thin Film Devices and Technology of Nankai University Jump to: navigation, search Name Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University Place Tianjin Municipality, China Zip 300071 Sector Solar Product A thin-film solar cell research institute in China. References Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University is a company located in Tianjin Municipality, China . References ↑ "Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University"

305

Abstract--In this paper, the propagation characteristics of an enhanced-thickness magnetic nanoparticle thin film are  

E-Print Network (OSTI)

nanoparticle thin film are investigated on high resistivity silicon substrate (10,000 ohm-cm) for the first time up to 60 GHz. Contrary to other thin films, this nanoparticle thin film can achieve a thickness up. Index Terms-- Magnetic thin film, Nanoparticle, Coplanar waveguide, high-permeability materials, FGC I

Tentzeris, Manos

306

Thin-film aerogel thermal conductivity measurements via 3?  

Science Journals Connector (OSTI)

The limiting constraint in a growing number of nano systems is the inability to thermally tune devices. Silica aerogel is widely accepted as the best solid thermal insulator in existence and offers a promising solution for microelectronic systems needing superior thermal isolation. In this study, thin-film silica aerogel films varying in thickness from 250 to 1280 nm were deposited on SiO2 substrates under a variety of deposition conditions. These samples were then thermally characterized using the 3? technique. Deposition processes for depositing the 3? testing mask to the sample were optimized and it was demonstrated that thin-film aerogel can maintain its structure in common fabrication processes for microelectromechanical systems. Results indicate that thin-film silica aerogel can maintain the unique, ultra-low thermal conductivity commonly observed in bulk aerogel, with a directly measured thermal conductivity as low as 0.024 W/m-K at temperature of 295 K and pressure between 0.1 and 1 Pa.

M.L. Bauer; C.M. Bauer; M.C. Fish; R.E. Matthews; G.T. Garner; A.W. Litchenberger; P.M. Norris

2011-01-01T23:59:59.000Z

307

Quantum states of neutrons in magnetic thin films  

SciTech Connect

We have studied experimentally and theoretically the interaction of polarized neutrons with magnetic thin films and magnetic multilayers. In particular, we have analyzed the behavior of the critical edges for total external reflection in both cases. For a single film we have observed experimentally and theoretically a simple behavior: the critical edges remain fixed and the intensity varies according to the angle between the polarization axis and the magnetization vector inside the film. For the multilayer case we find that the critical edges for spin-up and spin-down polarized neutrons move toward each other as a function of the angle between the magnetization vectors in adjacent ferromagnetic films. Although the results for multilayers and single thick layers appear to be different, in fact, the same spinor method explains both results. An interpretation of the critical edges behavior for the multilyers as a superposition of ferromagnetic and antifferomagnetic states is given.

Radu, F.; Zabel, H. [Department of Physics, Ruhr-University Bochum, D- 44780 Bochum (Germany); Leiner, V. [Institut fuer Werkstoffforschung WFN, GKSS Forschungszentrum GmbH, 21502 Geesthacht (Germany); Wolff, M. [Department of Physics, Ruhr-University Bochum, D- 44780 Bochum (Germany); Institut Laue-Langevin, F-38042 Grenoble Cedex 9 (France); Ignatovich, V.K. [Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, 141980, Dubna Moscow Region (Russian Federation)

2005-06-01T23:59:59.000Z

308

Thermal Conductivity in Nanocrystalline Ceria Thin Films  

SciTech Connect

The thermal conductivity of nanocrystalline ceria films grown by unbalanced magnetron sputtering is determined as a function of temperature using laser-based modulated thermoreflectance. The films exhibit significantly reduced conductivity compared with stoichiometric bulk CeO2. A variety of microstructure imaging techniques including X-ray diffraction, scanning and transmission electron microscopy, X-ray photoelectron analysis, and electron energy loss spectroscopy indicate that the thermal conductivity is influenced by grain boundaries, dislocations, and oxygen vacancies. The temperature dependence of the thermal conductivity is analyzed using an analytical solution of the Boltzmann transport equation. The conclusion of this study is that oxygen vacancies pose a smaller impediment to thermal transport when they segregate along grain boundaries.

Marat Khafizov; In-Wook Park; Aleksandr Chernatynskiy; Lingfeng He; Jianliang Lin; John J. Moore; David Swank; Thomas Lillo; Simon R. Phillpot; Anter El-Azab; David H. Hurley

2014-02-01T23:59:59.000Z

309

Engineering Thin-Film Oxide Interfaces | Advanced Photon Source  

NLE Websites -- All DOE Office Websites (Extended Search)

Novel Materials Become Multifunctional at the Ultimate Quantum Limit Novel Materials Become Multifunctional at the Ultimate Quantum Limit Outsmarting Flu Viruses How Lead-Free Solder (Mis)Behaves under Stress Dynamics of Polymer Chains Atop Different Materials Priming the Pump in the Fight against Drug-Resistant Tuberculosis Science Highlights Archives: 2013 | 2012 | 2011 | 2010 2009 | 2008 | 2007 | 2006 2005 | 2004 | 2003 | 2002 2001 | 2000 | 1998 | Subscribe to APS Science Highlights rss feed Engineering Thin-Film Oxide Interfaces NOVEMBER 12, 2012 Bookmark and Share LAO thin films on STO substrates are depicted in the top schematics (LAO indicated by blue spheres, STO by green spheres). The top left-hand panel demonstrates a chemically broad interface resulting from conventional growth in a low pressure oxygen environment. In contrast, the top

310

Method for formation of thin film transistors on plastic substrates  

DOE Patents (OSTI)

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

1998-10-06T23:59:59.000Z

311

Method for formation of thin film transistors on plastic substrates  

DOE Patents (OSTI)

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

1998-10-06T23:59:59.000Z

312

Thin film battery and method for making same  

DOE Patents (OSTI)

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

Bates, John B. (Oak Ridge, TN); Dudney, Nancy J. (Knoxville, TN); Gruzalski, Greg R. (Oak Ridge, TN); Luck, Christopher F. (Knoxville, TN)

1994-01-01T23:59:59.000Z

313

Surface oxidation of Permalloy thin films  

SciTech Connect

The chemical and magnetic structures of oxides on the surface of Permalloy Ni{sub 81}Fe{sub 19} films were investigated as functions of annealing time with x-ray and polarized neutron reflectometry. For annealing times of less than one hour, the oxide consisted of a 1.5-nm-thick layer of NiO on an Fe oxide layer that was in contact with Permalloy. The Fe oxide thickness increases with annealing time with a parabolic rate constant of 10{sup -18} cm{sup 2} s{sup -1} (for an annealing temperature of 373 K). The growth of the oxide layer is limited by the rate at which oxygen appears below the NiO layer. No portion of the oxide region was found to be ferromagnetically ordered for films annealed less than one hour. The growth of the Fe oxide region is well correlated with the measured increase of the second-order magnetic susceptibility for similarly prepared samples.

Fitzsimmons, M. R.; Crawford, T. M. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Silva, T. J. [National Institute of Standards and Technology, Boulder, Colorado 80303 (United States)

2006-01-01T23:59:59.000Z

314

Method for making dense crack free thin films  

DOE Patents (OSTI)

The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

Jacobson, Craig P. (Lafayette, CA); Visco, Steven J. (Berkeley, CA); De Jonghe, Lutgard C. (Lafayette, CA)

2007-01-16T23:59:59.000Z

315

Amorphous silicon thin film transistor as nonvolatile device.  

E-Print Network (OSTI)

particles before loaded into the deposition chamber. 2.2.2. Equipment for Plasma Processes Plasma-Enhanced Chemical Vapor...: Dr. Yue Kuo n-channel and p-channel amorphous-silicon thin-film transistors (a-Si:H TFTs) with copper electrodes prepared by a novel plasma etching process have been fabricated and studied. Their characteristics are similar to those of TFTs...

Nominanda, Helinda

2008-10-10T23:59:59.000Z

316

Ultra-Thin Metal Films for Enhanced Solar Absorption  

E-Print Network (OSTI)

This paper presents modelled results for optical absorption in ultra-thin films of nickel, gold and silver over the solar spectrum. It is found in the case of nickel there is an optimum thickness for maximum solar absorption around 10-13nm. This effect is not observed for gold or silver. It is postulated that this is an interference effect occurring due the particular real and imaginary refractive profile of nickel across the solar spectrum.

Ahmad, N; Teng, M; Cryan, M J

2012-01-01T23:59:59.000Z

317

Formation of thin-film resistors on silicon substrates  

DOE Patents (OSTI)

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

1988-11-01T23:59:59.000Z

318

Electric Field Induced Sphere-to-Cylinder Transition in Diblock Copolymer Thin Films  

E-Print Network (OSTI)

Electric Field Induced Sphere-to-Cylinder Transition in Diblock Copolymer Thin Films Ting Xu, A. V Manuscript Received June 21, 2004 ABSTRACT: An electric field induced sphere-to-cylinder transition in thin. In the absence of an applied electric field, thin films of the asymmetric diblock copolymer consisted of layers

Ocko, Ben

319

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network (OSTI)

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell #12;2 1. Introduction: martin.labrune@polytechnique.edu ABSTRACT We report on heterojunction solar cells whose thin intrinsic

320

Electrical characteristics of Ta2O5 thin films deposited by electron beam gun evaporation  

E-Print Network (OSTI)

Electrical characteristics of Ta2O5 thin films deposited by electron beam gun evaporation V films deposited by a simple electron beam gun evaporator. We describe thicknessO5 thin films deposited by a simple electron beam gun evaporator which enables versatility

Eisenstein, Gadi

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

High-throughput analysis of thin-film stresses using arrays of micromachined cantilever beams  

E-Print Network (OSTI)

High-throughput analysis of thin-film stresses using arrays of micromachined cantilever beams Hyun-throughput residual stress measurements on thin films by means of micromachined cantilever beams and an array of parallel laser beams. In this technique, the film of interest is deposited onto a silicon substrate

322

Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films  

DOE Patents (OSTI)

Sr{sub x}Ba{sub 1{minus}x}Nb{sub 2}O{sub 6}, where x is greater than 0.25 and less than 0.75, and KNbO{sub 3} ferroelectric thin films metalorganic chemical vapor deposited on amorphous or crystalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface are disclosed. Such films can be used in electronic, electro-optic, and frequency doubling components. 8 figs.

Wessels, B.W.; Nystrom, M.J.

1998-05-19T23:59:59.000Z

323

Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films  

DOE Patents (OSTI)

Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or crystalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

Wessels, Bruce W. (Wilmette, IL); Nystrom, Michael J. (Germantown, MD)

1998-01-01T23:59:59.000Z

324

Sputter deposition for multi-component thin films  

DOE Patents (OSTI)

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

Krauss, Alan R. (Plainfield, IL); Auciello, Orlando (Cary, NC)

1990-01-01T23:59:59.000Z

325

Sputter deposition for multi-component thin films  

DOE Patents (OSTI)

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

Krauss, A.R.; Auciello, O.

1990-05-08T23:59:59.000Z

326

Decay Processes in the Presence of Thin Superconducting Films  

E-Print Network (OSTI)

In a recent paper [Phys. Rev. Lett. 97, 070401 (2006)] the transition rate of magnetic spin-flip of a neutral two-level atom trapped in the vicinity of a thick superconducting body was studied. In the present paper we will extend these considerations to a situation with an atom at various distances from a dielectric film. Rates for the corresponding electric dipole-flip transition will also be considered. The rates for these atomic flip transitions can be reduced or enhanced, and in some situations they can even be completely suppressed. For a superconducting film or a thin film of a perfect conducting material various analytical expressions are derived that reveals the dependence of the physical parameters at hand.

Per K. Rekdal; Bo-Sture K. Skagerstam

2006-09-20T23:59:59.000Z

327

Order on disorder: Copper phthalocyanine thin films on technical substrates  

SciTech Connect

We have studied the molecular orientation of the commonly used organic semiconductor copper phthalocyanine (CuPC) grown as thin films on the technically relevant substrates indium tin oxide, oxidized Si, and polycrystalline gold using polarization-dependent x-ray absorption spectroscopy, and compare the results with those obtained from single crystalline substrates [Au(110) and GeS(001)]. Surprisingly, the 20{endash}50 nm thick CuPC films on the technical substrates are as highly ordered as on the single crystals. Importantly, however, the molecular orientation in the two cases is radically different: the CuPC molecules stand on the technical substrates and lie on the single crystalline substrates. The reasons for this and its consequences for our understanding of the behavior of CuPC films in devices are discussed. {copyright} 2001 American Institute of Physics.

Peisert, H.; Schwieger, T.; Auerhammer, J. M.; Knupfer, M.; Golden, M. S.; Fink, J.; Bressler, P. R.; Mast, M.

2001-07-01T23:59:59.000Z

328

Long-laser-pulse method of producing thin films  

DOE Patents (OSTI)

A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agen The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.

Balooch, Mehdi (Berkeley, CA); Olander, Donald K. (Berkeley, CA); Russo, Richard E. (Walnut Creek, CA)

1991-01-01T23:59:59.000Z

329

Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy  

SciTech Connect

Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructure after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases.

Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zhang, Yanmin; Hu, Ran; Ren, Naifei [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-11-14T23:59:59.000Z

330

American Photovoltaics | Open Energy Information  

Open Energy Info (EERE)

American Photovoltaics American Photovoltaics Name American Photovoltaics Place Houston, Texas Zip 77002 Sector Solar Product Will manufacture thin-film solar modules Website http://apv-us.com/ Coordinates 29.752554°, -95.3704009° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":29.752554,"lon":-95.3704009,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

331

Solar Thin Films Inc formerly American United Global Inc | Open Energy  

Open Energy Info (EERE)

Films Inc formerly American United Global Inc Films Inc formerly American United Global Inc Jump to: navigation, search Name Solar Thin Films Inc (formerly American United Global Inc) Place New York, New York Zip 10038 Sector Solar Product A US-based solar manufacturing equipment supplier. References Solar Thin Films Inc (formerly American United Global Inc)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Thin Films Inc (formerly American United Global Inc) is a company located in New York, New York . References ↑ "Solar Thin Films Inc (formerly American United Global Inc)" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Thin_Films_Inc_formerly_American_United_Global_Inc&oldid=351338

332

Thin film reactions on alloy semiconductor substrates  

SciTech Connect

The interactions between Pt and In{sub .53}Ga{sub .47}As have been studied. In{sub .53}Ga{sub .47}As substrates with 70nm Pt films were encapsulated in SiO{sub 2}, and annealed up to 600{degree}C in flowing forming gas. The composition and morphology of the reaction product phases were studied using x-ray diffraction, Auger depth profiling, and transmission electron microscopy. The reaction kinetics were examined with Rutherford Backscattering. Results show that Pt/In{sub .53}Ga{sub .47}As reacts to form many of the reaction products encountered in the Pt/GaAs and Pt/InP reactions: PtGa, Pt{sub 3}Ga, and PtAs{sub 2}. In addition, a ternary phase, Pt(In:Ga){sub 2}, develops, which is a solid solution between PtIn{sub 2} and PtGa{sub 2}. The amount of Ga in the ternary phase increases with annealing temperature, which causes a decrease in the lattice parameter of the phase. The reaction products show a tendency to form layered structures, especially for higher temperatures and longer annealing times. Unlike the binary case, the PtAs{sub 2}, phase is randomly oriented on the substrate, and is intermingle with a significant amount of Pt(In:Ga){sub 2}. Following Pt/In{sub .53}Ga{sub .47}As reactions, two orientation relationships between the Pt(In:Ga){sub 2} product phase and the substrate were observed, despite the large mismatch with the substrate ({approximately}8%). For many metal/compound semiconductor interactions, the reaction rate is diffusion limited, i.e. exhibits a parabolic dependence on time. An additional result of this study was the development of an In-rich layer beneath the reacted layer. The Auger depth profile showed a substantial increase in the sample at this layer. This is a significant result for the production of ohmic contacts, as the Schottky barrier height in this system lower for higher In concentrations. 216 refs.

Olson, D.A.

1990-11-01T23:59:59.000Z

333

Near-infrared photodetector consisting of J-aggregating cyanine dye and metal oxide thin films  

E-Print Network (OSTI)

We demonstrate a near-infrared photodetector that consists of a thin film of the J-aggregating cyanine dye, U3, and transparent metal-oxide charge transport layers. The high absorption coefficient of the U3 film, combined ...

Osedach, Timothy P.

334

Electrical and optical properties of polycrystalline Ag-doped CdS thin films  

Science Journals Connector (OSTI)

CdS and CdS:Ag thin films were prepared using the spray pyrolysis technique. The prepared films were deposited on glass substrate kept at a temperature of (420±10) °C. The optical and electrical properties hav...

M. A. Khalid; H. A. Jassem

1993-03-01T23:59:59.000Z

335

Strain engineered barium strontium titanate for tunable thin film resonators H. Khassaf,1  

E-Print Network (OSTI)

Strain engineered barium strontium titanate for tunable thin film resonators H. Khassaf,1 N of epitaxial (001) barium strontium titanate (BST) films are computed as functions of composition, misfit

Alpay, S. Pamir

336

Solid-state dewetting of continuous and patterned single crystal Ni thin films  

E-Print Network (OSTI)

Solid-state dewetting of thin films is a process through which continuous solid films agglomerate to form islands. This process is driven by capillary forces, often occurring via surface self-diffusion. Solid-state dewetting ...

Ye, Jongpil

2011-01-01T23:59:59.000Z

337

Effects of diffusion on lubricant distribution under flying headon thin-film disks  

Science Journals Connector (OSTI)

Lubricants on thin-film disks have large effects on head–disk interface characteristics. They reduce head and disk wear while thick lubricant film increases friction ... in many cases. Lubricant depletion due to

K. Yanagisawa; Y. Kawakubo; M. Yoshino

2005-01-01T23:59:59.000Z

338

400V Class Resistive Fault Current Limiter using YBCO Thin Films  

Science Journals Connector (OSTI)

A resistive fault current limiter with 410 Vrms x 56 Arms was realized by connecting six current limiting elements in series. An element was...3...single crystal and a metal film on AIN. The YBCO thin film was co...

Yuki Kudo; Hiroshi Kubota; Mutsuki Yamazaki…

2000-01-01T23:59:59.000Z

339

Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer  

E-Print Network (OSTI)

Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric current gain obtained...

Lu, Tianlin

2012-07-16T23:59:59.000Z

340

Structural, optical and photocatalytic properties of ZnO thin films and  

E-Print Network (OSTI)

emitting diodes, gas sensors and transparent conducting thin films for solar cells. In this work, Zn an electronic furnace. Fig. 1. Grain size (black) and RMS variations (blue) of 1-6 layered ZnO films vs

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
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341

Low Cost Fabrication of Thin-Film Ceramic Membranes for Nonshrinking...  

NLE Websites -- All DOE Office Websites (Extended Search)

Low Cost Fabrication of Thin-Film Ceramic Membranes for Nonshrinking Substrates Lawrence Berkeley National Laboratory Contact LBL About This Technology Technology Marketing...

342

Advanced Light-Trapping in Thin-Film Silicon Solar Cells  

Science Journals Connector (OSTI)

Light-trapping schemes are essential for high efficiency thin-film Silicon devices. Implementation of various light-trapping/scattering elements will be discussed. An optimum textured...

Wyrsch, Nicolas

343

Emission-angle-dependent photoluminescence of rubrene thin films on silver  

Science Journals Connector (OSTI)

Rubrene layers with thickness comparable to a visible light wavelength on silver thin film exhibit anomalous photoluminescence (PL) spectra that depend strongly on emission angle. The...

Wakamatsu, Takashi

2014-01-01T23:59:59.000Z

344

Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells  

E-Print Network (OSTI)

Thin-film silicon solar cell technology," Progress insolar cells: modeling, materials and device technology.technologies competitive with traditional wafer based solar cells,

Deceglie, Michael G.

2014-01-01T23:59:59.000Z

345

Technological assessment of light-trapping technology for thin-film Si solar cell.  

E-Print Network (OSTI)

??The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was… (more)

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

346

Studies of Block Copolymer Thin Films and Mixtures with an Ionic Liquid  

E-Print Network (OSTI)

identification of structure and domain size in block copolymer thin films using RSoXS enables a quantitative comparison of the bulk

Virgili, Justin

2009-01-01T23:59:59.000Z

347

E-Print Network 3.0 - as2s3 thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

51 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

348

E-Print Network 3.0 - aggase2 thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

42 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

349

E-Print Network 3.0 - ag-in-se thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

36 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

350

E-Print Network 3.0 - alendronate-hydroxyapatite thin films Sample...  

NLE Websites -- All DOE Office Websites (Extended Search)

35 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

351

E-Print Network 3.0 - almgb14 thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

38 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

352

E-Print Network 3.0 - antibacterial thin films Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

78 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

353

E-Print Network 3.0 - abrasion-resistant thin films Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

73 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

354

E-Print Network 3.0 - al-cu-fe thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

52 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

355

Using Localized Plasmon Resonances to Enhance Absorption Efficiency in Thin-film Organic Solar Cells  

Science Journals Connector (OSTI)

We propose the use of localized surface plasmon modes excited by square metallic gratings to enhance the optical absorption of thin-film organic solar cells. Broadband absorption...

Le, Khai Q; Abass, Aimi; Maes, Bjorn; Bienstman, Peter; Alu, Andrea

356

E-Print Network 3.0 - active thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Western Ontario a JOINT presentation of the Summary: and conducting thin films for optoelectronic applications from carbon nanotubes and graphene" ABSTRACT: Low... . The interest...

357

E-Print Network 3.0 - ag sn thin-film Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

solar... on a conventional metal-oxide transparent electrode. Thin-film optoelectronic devices make ... Source: Cui, Yi - Department of Materials Science and Engineering,...

358

Study of GaN:Eu3+ Thin Films Deposited by Metallorganic  

E-Print Network (OSTI)

as an advantageous architecture for transparent electrodes in optoelectronic devices due primarily to high characteristics of electrodes in optoelectronic devices and in supercapactiors, we introduced oxide thin films

McKittrick, Joanna

359

Thin-Film Fiber Optic Sensors for Power Control and Fault Detection. Final Report  

SciTech Connect

Described is the development of an optical current measurement device, an active power conditioning system, and sol gel type thin films for the detection of magnetic fields.

Duncan, Paul Grems

2003-09-30T23:59:59.000Z

360

Electrostatic layer-by-layer assembly of hybrid thin films using polyelectrolytes and inorganic nanoparticles.  

E-Print Network (OSTI)

??Polymer/inorganic nanoparticle hybrid thin films, primarily composed of functional inorganic nanoparticles, are of great interest to researchers because of their interesting electronic, photonic, and optical… (more)

Peng, Chunqing

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Robust Thin-Film Generator Based on Segmented Contact-Electrification for Harvesting Wind Energy  

Science Journals Connector (OSTI)

Robust Thin-Film Generator Based on Segmented Contact-Electrification for Harvesting Wind Energy ... energies in a wide range of forms. ...

Xian Song Meng; Guang Zhu; Zhong Lin Wang

2014-05-13T23:59:59.000Z

362

Design and optimization of large area thin-film CdTe detector for radiation therapy imaging applications  

SciTech Connect

Purpose: The authors investigate performance of thin-film cadmium telluride (CdTe) in detecting high-energy (6 MV) x rays. The utilization of this material has become technologically feasible only in recent years due to significant development in large area photovoltaic applications. Methods: The CdTe film is combined with a metal plate, facilitating conversion of incoming photons into secondary electrons. The system modeling is based on the Monte Carlo simulations performed to determine the optimized CdTe layer thickness in combination with various converter materials. Results: The authors establish a range of optimal parameters producing the highest DQE due to energy absorption, as well as signal and noise spatial spreading. The authors also analyze the influence of the patient scatter on image formation for a set of detector configurations. The results of absorbed energy simulation are used in device operation modeling to predict the detector output signal. Finally, the authors verify modeling results experimentally for the lowest considered device thickness. Conclusions: The proposed CdTe-based large area thin-film detector has a potential of becoming an efficient low-cost electronic portal imaging device for radiation therapy applications.

Parsai, E. Ishmael; Shvydka, Diana; Kang, Jun [Department of Radiation Oncology, University of Toledo Health Sciences Campus, 3000 Arlington Avenue, Toledo, Ohio 43614 (United States); Department of Radiation Oncology, John Hopkins University, 401 N Broadway, Suite 1440, Baltimore, Maryland 21231 (United States)

2010-08-15T23:59:59.000Z

363

AN INVESTIGATION OF THE FLUID DYNAMICS ASPECTS OF THIN LIQUID FILM PROTECTION  

E-Print Network (OSTI)

a conservative "design window" for film detachment. Initial observations of film flow around cy- lindricalAN INVESTIGATION OF THE FLUID DYNAMICS ASPECTS OF THIN LIQUID FILM PROTECTION SCHEMES FOR INERTIAL liquid film wall protection systems have been conducted in support of the ARIES-IFE study. Both

California at San Diego, University of

364

Silicon-integrated thin-film structure for electro-optic applications  

DOE Patents (OSTI)

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

McKee, Rodney A. (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

365

High-performance Si microwire photovoltaics  

SciTech Connect

Crystalline Si wires, grown by the vapor–liquid–solid (VLS) process, have emerged as promising candidate materials for low-cost, thin-film photovoltaics. Here, we demonstrate VLS-grown Si microwires that have suitable electrical properties for high-performance photovoltaic applications, including long minority-carrier diffusion lengths (L{sub n} ? 30 µm) and low surface recombination velocities (S ? 70 cm·s{sup ?1}). Single-wire radial p–n junction solar cells were fabricated with amorphous silicon and silicon nitride surface coatings, achieving up to 9.0% apparent photovoltaic efficiency, and exhibiting up to ~600 mV open-circuit voltage with over 80% fill factor. Projective single-wire measurements and optoelectronic simulations suggest that large-area Si wire-array solar cells have the potential to exceed 17% energy-conversion efficiency, offering a promising route toward cost-effective crystalline Si photovoltaics.

Kelzenberg, Michael D.; Turner-Evans, Daniel B.; Putnam, Morgan C.; Boettcher, Shannon W.; Briggs, Ryan M.; Baek, Jae Y; Lewis, Nathan S.; Atwater, Harry A.

2011-01-01T23:59:59.000Z

366

Overview and Challenges of Thin Film Solar Electric Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

and Challenges of Thin and Challenges of Thin Film Solar Electric Technologies H.S. Ullal Presented at the World Renewable Energy Congress X and Exhibition 2008 Glasgow, Scotland, United Kingdom July 19-25, 2008 Conference Paper NREL/CP-520-43355 December 2008 NOTICE The submitted manuscript has been offered by an employee of the Alliance for Sustainable Energy, LLC (ASE), a contractor of the US Government under Contract No. DE-AC36-08-GO28308. Accordingly, the US Government and ASE retain a nonexclusive royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for US Government purposes. This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any

367

Combinatorial study of zinc tin oxide thin-film transistors  

SciTech Connect

Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO:SnO{sub 2} ratio of the film varies as a function of position on the sample, from pure ZnO to SnO{sub 2}, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2 to 12 cm{sup 2}/V s, with two peaks in mobility in devices at ZnO fractions of 0.80{+-}0.03 and 0.25{+-}0.05, and on/off ratios as high as 10{sup 7}. Transistors composed predominantly of SnO{sub 2} were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

McDowell, M. G.; Sanderson, R. J.; Hill, I. G. [Dalhousie University, Department of Physics, Halifax, Nova Scotia B3H 3J5 (Canada)

2008-01-07T23:59:59.000Z

368

Thin film solar cell including a spatially modulated intrinsic layer  

DOE Patents (OSTI)

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

1989-03-28T23:59:59.000Z

369

Three approaches to economical photovoltaics: conformal Cu2S, organic luminescent films, and PbSe nanocrystal superlattices  

E-Print Network (OSTI)

approaches to economical photovoltaics: conformal Cu 2 S,routes to more efficient photovoltaics using conformal Cu 2on grid-parity. Progress in Photovoltaics: Research and

Carbone, Ian Anthony

2013-01-01T23:59:59.000Z

370

Deposition and characterization of Cd{sub 1?x}Mg{sub x}Te thin films grown by a novel cosublimation method  

SciTech Connect

Photovoltaic cells utilizing the CdS/CdTe structure have improved substantially in the past few years. Despite the recent advances, the efficiency of CdS/CdTe cells is still significantly below their Shockley–Queisser limit. CdTe based ternary alloy thin films, such as Cd{sub 1?x}Mg{sub x}Te (CMT), could be used to improve efficiency of CdS/CdTe photovoltaic cells. Higher band gap Cd{sub 1?x}Mg{sub x}Te films can be the absorber in top cells of a tandem structure or an electron reflector layer in CdS/CdTe cells. A novel cosublimation method to deposit CMT thin films has been developed. This method can deposit CMT films of band gaps ranging from 1.5 to 2.3?eV. The cosublimation method is fast, repeatable, and scalable for large areas, making it suitable for implementing into large-scale manufacturing. Characterization of as-deposited CMT films, with x varying from 0 to 0.35, reveals a linear relationship between Mg content measured by energy dispersive x-ray spectroscopy and the optical band gap. Glancing angle x-ray diffraction (GAXRD) measurements of Cd{sub 1?x}Mg{sub x}Te films show a zinc-blende structure similar to CdTe. Furthermore, increasing Mg content decreases the lattice parameter and the grain size. GAXRD shows the films are under mild tension after deposition.

Kobyakov, Pavel S., E-mail: pskobyak@rams.colostate.edu; Swanson, Drew E.; Sampath, Walajabad S. [Department of Mechanical Engineering, Colorado State University, 1374 Campus Delivery, Fort Collins, Colorado 80523 (United States); Moore, Andrew; Raguse, John M. [Department of Physics, Colorado State University, 1875 Campus Delivery, Fort Collins, Colorado 80523 (United States)

2014-03-15T23:59:59.000Z

371

Method of lift-off patterning thin films in situ employing phase change resists  

DOE Patents (OSTI)

Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas. The condensed solid film is heated selectively with a patterned stamp to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film. An organic semiconductor film is coated on the patterned resist film and the patterned resist film is heated to cause it to sublime away and to lift off because of the phase change.

Bahlke, Matthias Erhard; Baldo, Marc A; Mendoza, Hiroshi Antonio

2014-09-23T23:59:59.000Z

372

Critical lines of magnetic semiconductor thin films: Experiment  

Science Journals Connector (OSTI)

The irreversibilities between the field-cooled and zero-field-cooled dc magnetization were used to determine the field and composition dependence of the spin-glass freezing temperature in CdCr2-2x In2x Se4 thin films. The magnetic ordering was confirmed by the temperature dependence of induced magnetization M and unidirectional magnetic anisotropy field Han determined from ferromagnetic resonance data (4.2–120 K). The experimentally determined H-T phase diagram shows two instability lines: the Gabay-Toulouse-type (GT line) and the Almeida-Thouless-type (AT line) for thin films of CdCr2 Se4 :In with reentrant transition and the AT line for CdCr2-2x In2x Se4 in the spin-glass state. The AT and GT lines obey the relation ?=[(n+1)(n+2)/8]1/3 (heff )2/3 and ?=[(n2 +4n+2)/(4(n+2)2 )] (heff )2 , respectively, for the normalized effective field heff =ha +hm . The first term in heff stands for the external magnetic field, while the second is related to the internal field of the infinite ferromagnetic network (long-range ordering). The value of hm determined from the H-T phase diagram was found to be dependent on indium concentration.

M. Lubecka; L. J. Maksymowicz; R. Szymczak; W. Powroz-acutenik

1997-03-01T23:59:59.000Z

373

Issue and challenges facing rechargeable thin film lithium batteries  

Science Journals Connector (OSTI)

New materials hold the key to fundamental advances in energy conversion and storage, both of which are vital in order to meet the challenge of global warming and the finite nature of fossil fuels. Nanomaterials in particular offer unique properties or combinations of properties as electrodes and electrolytes in a range of energy devices. Technological improvements in rechargeable solid-state batteries are being driven by an ever-increasing demand for portable electronic devices. Lithium batteries are the systems of choice, offering high energy density, flexible, lightweight design and longer lifespan than comparable battery technologies. We present a brief historical review of the development of lithium-based thin film rechargeable batteries highlight ongoing research strategies and discuss the challenges that remain regarding the discovery of nanomaterials as electrolytes and electrodes for lithium batteries also this article describes the possible evolution of lithium technology and evaluates the expected improvements, arising from new materials to cell technology. New active materials under investigation and electrode process improvements may allow an ultimate final energy density of more than 500 Wh/L and 200 Wh/kg, in the next 5–6 years, while maintaining sufficient power densities. A new rechargeable battery technology cannot be foreseen today that surpasses this. This report will provide key performance results for thin film batteries and highlight recent advances in their development.

Arun Patil; Vaishali Patil; Dong Wook Shin; Ji-Won Choi; Dong-Soo Paik; Seok-Jin Yoon

2008-01-01T23:59:59.000Z

374

NREL PV AR&D 11th review meeting, May 13--15, 1992, Denver Marriott City Center, Denver, Colorado. Photovoltaic Advanced Research and Development Project  

SciTech Connect

This is a collection of abstracts from papers presented at the National Renewable Energy Laboratory (NREL) Photovoltaic (PV) research and development review meeting held May 1992. Subject areas covered include solar cell and solar module manufacturing and development, materials, polycrystalline thin films, applications, amorphous silicon, solar cell performance and testing, crystalline silicon and other photovoltaic and safety perspectives. (GHH)

Not Available

1992-06-01T23:59:59.000Z

375

Dielectric back scattering patterns for light trapping in thin-film Si solar cells  

E-Print Network (OSTI)

Dielectric back scattering patterns for light trapping in thin-film Si solar cells M. van Lare,1 of dielectric and metallic backscattering patterns in thin-film a-Si:H solar cells. We compare devices. Zhu, C.-M. Hsu, Z. Yu, S. Fan, and Y. Cui, "Nanodome solar cells with efficient light management

Polman, Albert

376

Enhancement of photoluminescence due to erbium-doped in CdS thin films  

Science Journals Connector (OSTI)

Cadmium sulfide (CdS) thin films were synthesized by chemical bath ... on glass substrates at 80 °C. The CdS thin films were doped with erbium (Er3+) during the growth process by adding aqueous solutions of Er(NO

O. Zelaya-Angel; S. A. Tomás; P. Rodríguez…

2012-01-01T23:59:59.000Z

377

EPMA Instructions for Thin Film Samples General guidelines to reading computer related commands  

E-Print Network (OSTI)

EPMA Instructions for Thin Film Samples General guidelines to reading computer related commands: `Single quote' = menu item, window, or icon "Double quote" = something you type = button you your sample, thin film up, on the dot of epoxy 4. Repeat until all samples are on the puck 5. Flip your

378

Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell  

E-Print Network (OSTI)

Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell J. Grandidier on top of a solar cell can enhance light absorption and therefore increase its efficiency. Freely photocurrent of the solar cell. On a typical thin film amorphous silicon solar cell, a parametric analysis

Atwater, Harry

379

The effect of stress on the dielectric properties of barium strontium titanate thin films  

E-Print Network (OSTI)

The effect of stress on the dielectric properties of barium strontium titanate thin films T. M Barium strontium titanate thin films are being developed as capacitors in dynamic random access memories to their large permittivities, barium strontium titan- ate BST bulk ceramics have long been used to make high

Suo, Zhigang

380

High tunability barium strontium titanate thin films for rf circuit applications  

E-Print Network (OSTI)

High tunability barium strontium titanate thin films for rf circuit applications N. K. Pervez,a) P) Large variations in the permittivity of rf magnetron sputtered thin-film barium strontium titanate have/cm. © 2004 American Institute of Physics. [DOI: 10.1063/1.1818724] Barium strontium titanate (BST) is a solid

York, Robert A.

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Optimization of High Tunability Barium Strontium Titanate Thin Films Grown by RF Magnetron  

E-Print Network (OSTI)

Optimization of High Tunability Barium Strontium Titanate Thin Films Grown by RF Magnetron Abstract-- Barium strontium titanate is a solid solution perovskite with a field-dependent permittivity.7 MV/cm. I. INTRODUCTION In recent years there has been much interest in thin-film barium strontium

York, Robert A.

382

Discrete Barium Strontium Titanate (BST) Thin-Film Interdigital Varactors on Alumina: Design, Fabrication, Characterization, and  

E-Print Network (OSTI)

Discrete Barium Strontium Titanate (BST) Thin-Film Interdigital Varactors on Alumina: Design, Raleigh, NC-27695-7914, USA. Email:jayeshnath@ieee.org Abstract -- Discrete Barium Strontium Titanate (BST, capacitors, BST, ferroelectric, thin-film, barium strontium titanate, bandpass filter, IP3, ACPR, temperature

383

Self-similar solutions for a fractional thin film equation governing hydraulic fractures  

E-Print Network (OSTI)

Self-similar solutions for a fractional thin film equation governing hydraulic fractures C. Imbert equation governing hydraulic fractures are constructed. One of the boundary con- ditions, which accounts, 35R11, 35C06 Keywords: Hydraulic fractures, higher order equation, thin films, fractional Laplacian

Boyer, Edmond

384

STRAIN SENSING WITH PIEZOELECTRIC ZINC OXIDE THIN FILMS FOR VIBRATION SUPPRESSION IN HARD DISK DRIVES  

E-Print Network (OSTI)

was successfully obtained while the suspension was flying on a disk as in normal drive operation. PreliminarySTRAIN SENSING WITH PIEZOELECTRIC ZINC OXIDE THIN FILMS FOR VIBRATION SUPPRESSION IN HARD DISK This paper describes the integration of thin film ZnO strain sensors onto hard disk drive suspensions

Horowitz, Roberto

385

Rubbery Graft Copolymer Electrolytes for Solid-State, Thin-Film Lithium Batteries  

E-Print Network (OSTI)

Rubbery Graft Copolymer Electrolytes for Solid-State, Thin-Film Lithium Batteries Patrick E. Trapa to be stable over a wide temperature range and voltage window. Solid-state, thin-film batteries comprised triflate-doped POEM-g-PDMS, which exhibited solid-like mechanical behavior, were nearly identical to those

Sadoway, Donald Robert

386

Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films  

E-Print Network (OSTI)

Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films A. Bulusu and D. G. Walker1 Interdisciplinary Program in Material Science Vanderbilt University Nashville on device characteristics of 1D and 2D thin film superlattices whose applications include thermoelectric

Walker, D. Greg

387

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network (OSTI)

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

388

Nano-photonic Light Trapping In Thin Film Solar Dennis M. Callahan Jr.  

E-Print Network (OSTI)

Nano-photonic Light Trapping In Thin Film Solar Cells Thesis by Dennis M. Callahan Jr. In Partial. Jeremy Munday for helping me get started on the thin-film GaAs project and for all the time we spent to thank Dr. Jonathan Grandidier for working closely with me for a couple years on the nano sphere solar

Winfree, Erik

389

Bi-Sr-Ca-Cu-O thin films grown by flash evaporation and pulsed laser deposition  

E-Print Network (OSTI)

. Thin films were grown by flash evaporation at Texas A&M University, and by pulsed laser deposition (PLD) at the University of Wollongong, Australia. The latter of these techniques is widely used for growing thin films of various compounds. Single...

Ganapathy Subramanian, Santhana

2004-09-30T23:59:59.000Z

390

Measuring the fracture toughness of ultra-thin films with application to AlTa coatings  

E-Print Network (OSTI)

1 Measuring the fracture toughness of ultra-thin films with application to AlTa coatings Yong Xiang Abstract An experimental technique is presented for measuring the fracture toughness of brittle thin films with a focused ion beam and the membranes are pressurized until rupture. The fracture stress of the membrane

391

Carbon nanotube thin films with ordered structures Chunsheng Du,a  

E-Print Network (OSTI)

Carbon nanotube thin films with ordered structures Chunsheng Du,a Jeff Yehb and Ning Pan*a Received December 2004 DOI: 10.1039/b414682d Carbon nanotube thin films with ordered structures have been developed properties, carbon nanotubes have aroused a great deal of research interest, and a wider range of potential

Pan, Ning

392

X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films  

E-Print Network (OSTI)

X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films T. J. Richardsona@lbl.gov Abstract Mixed metal thin films containing magnesium and a first-row transition element exhibit very large and coordination of the magnesium and transition metal atoms during hydrogen absorption were studied using dynamic

393

Synthesis and Screening of Thin Films in the CeCl3-CeBr3 System...  

NLE Websites -- All DOE Office Websites (Extended Search)

Screening of Thin Films in the CeCl3-CeBr3 System for Scintillator Applications. Synthesis and Screening of Thin Films in the CeCl3-CeBr3 System for Scintillator Applications....

394

Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication  

SciTech Connect

The effect that direct current (dc) substrate bias has on radio frequency-sputter-deposited amorphous silicon (a-Si) films has been investigated. The substrate bias produces a denser a-Si film with fewer defects compared to unbiased films. The reduced number of defects results in a higher resistivity because defect-mediated conduction paths are reduced. Thin film transistors (TFTs) that were completely sputter deposited were fabricated and characterized. The TFT with the biased a-Si film showed lower leakage (off-state) current, higher on/off current ratio, and higher transconductance (field effect mobility) than the TFT with the unbiased a-Si film.

Jun, Seung-Ik; Rack, Philip D.; McKnight, Timothy E.; Melechko, Anatoli V.; Simpson, Michael L. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996-2200 (United States); Molecular Scale Engineering and Nanoscale Technologies Research Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

2005-09-26T23:59:59.000Z

395

Photovoltaic cell assembly  

DOE Patents (OSTI)

A photovoltaic assembly for converting high intensity solar radiation into lectrical energy in which a solar cell is separated from a heat sink by a thin layer of a composite material which has excellent dielectric properties and good thermal conductivity. This composite material is a thin film of porous Al.sub.2 O.sub.3 in which the pores have been substantially filled with an electrophoretically-deposited layer of a styrene-acrylate resin. This composite provides electrical breakdown strengths greater than that of a layer consisting essentially of Al.sub.2 O.sub.3 and has a higher thermal conductivity than a layer of styrene-acrylate alone.

Beavis, Leonard C. (Albuquerque, NM); Panitz, Janda K. G. (Edgewood, NM); Sharp, Donald J. (Albuquerque, NM)

1990-01-01T23:59:59.000Z

396

Process Development for Nanostructured Photovoltaics  

SciTech Connect

Photovoltaic manufacturing is an emerging industry that promises a carbon-free, nearly limitless source of energy for our nation. However, the high-temperature manufacturing processes used for conventional silicon-based photovoltaics are extremely energy-intensive and expensive. This high cost imposes a critical barrier to the widespread implementation of photovoltaic technology. Argonne National Laboratory and its partners recently invented new methods for manufacturing nanostructured photovoltaic devices that allow dramatic savings in materials, process energy, and cost. These methods are based on atomic layer deposition, a thin film synthesis technique that has been commercialized for the mass production of semiconductor microelectronics. The goal of this project was to develop these low-cost fabrication methods for the high efficiency production of nanostructured photovoltaics, and to demonstrate these methods in solar cell manufacturing. We achieved this goal in two ways: 1) we demonstrated the benefits of these coatings in the laboratory by scaling-up the fabrication of low-cost dye sensitized solar cells; 2) we used our coating technology to reduce the manufacturing cost of solar cells under development by our industrial partners.

Elam, Jeffrey W.

2015-01-01T23:59:59.000Z

397

Research Opportunities in Reliability of Photovoltaic Modules (Presentation)  

SciTech Connect

The motivation for an increased scope and a more proactive effort in reliability research of photovoltaic modules and systems includes reducing the levelized cost of energy and gaining better confidence in the energy and financial payback for photovoltaic systems. This increased reliability and confidence will lead to greater penetration of photovoltaics in the energy portfolio and greater employment in photovoltaics and related industries. Present research needs include the fundamental degradation mechanisms of polymers, connectors and other module components, mapping of failure mechanisms observed in the field to those in accelerated lifetime tests, determining the acceleration factors, and improving standards for modules such that tests can appropriately be assigned to evaluate their long term durability. Specific mechanisms discussed are corrosion in module components, metastability in thin-film active layers, delamination and loss of elastic properties in module polymeric materials, and inverter failure. Presently, there is hiring of reliability scientists and engineers at many levels of the value chain for photovoltaics.

Hacke, P.

2010-05-01T23:59:59.000Z

398

Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications  

Science Journals Connector (OSTI)

This paper describes a systematic approach to analyze the simultaneous impact of various reactant plasma parameters of remote plasma enhanced ALD (PEALD) on the ZnO thin film properties. Particular emphasis is placed on the film stoichiometry which affects the electrical properties of the thin film. Design of Experiment (DOE) is used to study the impact of the oxygen plasma parameters such as the RF power, pressure and plasma time to realize semiconductor quality of ZnO thin film. Based on the optimized plasma condition, staggered bottom-gate \\{TFTs\\} were fabricated and its electrical characteristics were measured.

S.M. Sultan; O.D. Clark; T.B. Masaud; Q. Fang; R. Gunn; M.M.A. Hakim; K. Sun; P. Ashburn; H.M.H. Chong

2012-01-01T23:59:59.000Z

399

Reactions of Disilane on Cu(111): Direct Observation of Competitive Dissociation, Disproportionation, and Thin Film Growth Processes  

Science Journals Connector (OSTI)

Reactions of Disilane on Cu(111): Direct Observation of Competitive Dissociation, Disproportionation, and Thin Film Growth Processes ...

Shrikant P. Lohokare; Benjamin C. Wiegand; Ralph G. Nuzzo

1995-10-01T23:59:59.000Z

400

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa  

E-Print Network (OSTI)

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa , Alessio in the fabrication of high efficiency CdTe/CdS thin film solar cells. Usually, it is done first by etching the Cd: Back Contact, CdTe, Thin Film 1 INTRODUCTION The back contact in the CdTe/CdS thin film solar cell

Romeo, Alessandro

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Comparison of Ag and SiO2 Nanoparticles for Light Trapping Applications in Silicon Thin Film Solar Cells  

Science Journals Connector (OSTI)

Comparison of Ag and SiO2 Nanoparticles for Light Trapping Applications in Silicon Thin Film Solar Cells ... † Department

Martin Theuring; Peng Hui Wang; Martin Vehse; Volker Steenhoff; Karsten von Maydell; Carsten Agert; Alexandre G. Brolo

2014-09-10T23:59:59.000Z

402

Characterization of iron oxide thin films for photoelectrochemical hydrogen production.  

E-Print Network (OSTI)

??Solar energy is the most sustainable source of energy available. However, solar applications such as photovoltaic cells represent only a partial solution to weaning our… (more)

George, Kyle Eustace Nelson

2009-01-01T23:59:59.000Z

403

Hydrogenated TiO{sub 2} film for enhancing photovoltaic properties of solar cells and self-sensitized effect  

SciTech Connect

Hydrogenated TiO{sub 2} film was obtained by annealing TiO{sub 2} film at 350?°C for 2?h with hydrogen, and TiO{sub 2} films were prepared by screen printing on fluorine-doped tin oxide glass. Structural characterization by X-ray diffraction and electron microscopy did not show obvious difference between hydrogenated TiO{sub 2} film and pristine TiO{sub 2} film. Through optical and electrochemical characterization, the hydrogenated TiO{sub 2} film showed enhanced absorption and narrowed band gap, as well as reduced TiO{sub 2} surface impedance and dark current. As a result, an obviously enhanced photovoltaic effect was observed in the solar cell with hydrogenated TiO{sub 2} as photoanode without adding any dye due to the self-sensitized effect of hydrogenated TiO{sub 2} film, which excited electrons injecting internal conduction band of TiO{sub 2} to generate more photocurrent.

He, Hongcai; Yang, Kui; Wang, Ning, E-mail: ning-wang@uestc.edu.cn; Luo, Feifei; Chen, Haijun [State Key Laboratory of Electronic Thin Films and Integrated Devices and School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)

2013-12-07T23:59:59.000Z

404

Influence of film thickness and In-doping on physical properties of CdS thin films  

Science Journals Connector (OSTI)

Abstract Polycrystalline CdS thin films were deposited on glass substrates by close spaced sublimation technique. Samples of various thicknesses, ranging from 250 to 940 nm were obtained. The optical and electrical properties of pure CdS thin films were studied as a function of film thickness. The resistivity of as-deposited CdS films was in the order of 106–108 ? cm, depending upon the film thickness. In the high temperature region, carriers are transported over the grain boundaries by thermionic emission. Resistivity was reduced to the order of 10?2–101 ? cm by the thermally diffusion of indium into CdS films, without changing the type of carriers. The annealing temperature dependence of structural, optical and electrical properties of In-doped CdS films showed that the samples annealed at 350 °C and 400 °C exhibited better results.

Sajid Butt; Nazar Abbas Shah; Adnan Nazir; Zulfiqar Ali; Asghri Maqsood

2014-01-01T23:59:59.000Z

405

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network (OSTI)

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

406

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a  

E-Print Network (OSTI)

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a J. D. Servaites thin-film solar cell types: hydrogenated amorphous silicon a-Si:H p-i-n cells, organic bulk understanding of thin film solar cell device physics, including important module performance variability issues

Alam, Muhammad A.

407

Enhancement of optical absorption in thin-film organic solar cells through the excitation of plasmonic modes in metallic gratings  

E-Print Network (OSTI)

Enhancement of optical absorption in thin-film organic solar cells through the excitation 2010 We theoretically investigate the enhancement of optical absorption in thin-film organic solar.1063/1.3377791 Thin-film organic solar cells OSCs are a promising candidate for low-cost energy conversion.1­6 However

Veronis, Georgios

408

Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High efficiency and junction property  

E-Print Network (OSTI)

Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High-conductor-free organic lead iodide thin film solar cells have been fabricated with a sequential deposition method are comparable to that of the high-efficiency thin-film solar cells. VC 2014 AIP Publishing LLC. [http

Wang, Wei Hua

409

Design consideration of micro thin film solid-oxide fuel cells  

Science Journals Connector (OSTI)

Miniaturized planar solid-oxide fuel cells (SOFCs) and stacks can be fabricated by thin film deposition and micromachining. Serious thermal stresses, originating in fabrication and during operation, cause thermal–mechanical instability of the constituent thin films. In this paper, the effect of thin film geometry on thermal stress and mechanical stability is evaluated to optimize the structure of a thin film. A novel design of thin circular electrolyte films for SOFCs is presented by using corrugated structures, with which small thermal stresses and a broad design range of structure parameters can be obtained. Thermal transfer analysis shows that heat loss by solid conduction is serious in thin films with a small radius. But thermal convection and radiation dominate heat loss in large thin films with a radius of several millimetres. Scale-dependent thermal characteristics show the importance of film size and packaging in optimization of thermal isolation for micro SOFCs. A novel flip-flop stack configuration for micro SOFCs is presented. This configuration allows multiple cells to share one reaction chamber, helps to obtain uniform flow fields, and simplifies the flow field network for micro fuel cell stacks.

Yanghua Tang; Kevin Stanley; Jonathan Wu; Dave Ghosh; Jiujun Zhang

2005-01-01T23:59:59.000Z

410

Finite-element analysis of the deformation of thin Mylar films due to measurement forces.  

SciTech Connect

Significant deformation of thin films occurs when measuring thickness by mechanical means. This source of measurement error can lead to underestimating film thickness if proper corrections are not made. Analytical solutions exist for Hertzian contact deformation, but these solutions assume relatively large geometries. If the film being measured is thin, the analytical Hertzian assumptions are not appropriate. ANSYS is used to model the contact deformation of a 48 gauge Mylar film under bearing load, supported by a stiffer material. Simulation results are presented and compared to other correction estimates. Ideal, semi-infinite, and constrained properties of the film and the measurement tools are considered.

Baker, Michael Sean; Robinson, Alex Lockwood; Tran, Hy D.

2012-01-01T23:59:59.000Z

411

Soft-Chemistry–Based Routes to Epitaxial ?-Quartz Thin Films with Tunable Textures  

Science Journals Connector (OSTI)

...the outer surface (36...migrate to the surface and remain...illustrated by the parabolic dependence...expelled to the surface of the film...macrostructure of a large area in macroporous quartz thin film with...quartz films after 5 hours at...relax internal stresses within the...full width at half-maximum...

A. Carretero-Genevrier; M. Gich; L. Picas; J. Gazquez; G. L. Drisko; C. Boissiere; D. Grosso; J. Rodriguez-Carvajal; C. Sanchez

2013-05-17T23:59:59.000Z

412

Phase-field simulation of strain-induced domain switching in magnetic thin films  

E-Print Network (OSTI)

Phase-field simulation of strain-induced domain switching in magnetic thin films Jia-Mian Hu, G of the Bloch point in a magnetic film with strong uniaxial magnetic anisotropy Low Temp. Phys. 37, 690 (2011) Evolution of magnetic bubble domains in manganite films Appl. Phys. Lett. 99, 042503 (2011) 360° domain wall

Chen, Long-Qing

413

Sputtered Nickel Oxide Thin Film for Efficient Hole Transport Layer in Polymer-Fullerene Bulk-Heterojunction Organic Solar Cell  

SciTech Connect

Bulk-heterojunction (BHJ) organic photovoltaics (OPV) are very promising thin film renewable energy conversion technologies due to low production cost by high-throughput roll-to-roll manufacturing, an expansive list of compatible materials, and flexible device fabrication. An important aspect of OPV device efficiency is good contact engineering. The use of oxide thin films for this application offers increased design flexibility and improved chemical stability. Here we present our investigation of radio frequency magnetron sputtered nickel oxide (NiO{sub x}) deposited from oxide targets as an efficient, easily scalable hole transport layer (HTL) with variable work-function, ranging from 4.8 to 5.8 eV. Differences in HTL work-function were not found to result in statistically significant changes in open circuit voltage (V{sub oc}) for poly(3-hexylthiophene):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (P3HT:PCBM) BHJ device. Ultraviolet photoemission spectroscopy (UPS) characterization of the NiO{sub x} film and its interface with the polymer shows Fermi level alignment of the polymer with the NiO{sub x} film. UPS of the blend also demonstrates Fermi level alignment of the organic active layer with the HTL, consistent with the lack of correlation between V{sub oc} and HTL work-function. Instead, trends in j{sub sc}, V{sub oc}, and thus overall device performance are related to the surface treatment of the HTL prior to active layer deposition through changes in active layer thickness.

Widjonarko, N. E.; Ratcliff, E. L.; Perkins, C. L.; Sigdel, A. K.; Zakutayev, A.; Ndione, P. F.; Gillaspie, D. T.; Ginley, D. S.; Olson, D. C.; Berry, J. J.

2012-03-01T23:59:59.000Z

414

Properties of ferroelectric/ferromagnetic thin film heterostructures  

SciTech Connect

Ferroelectric/ferromagnetic thin film heterostructures, SrBi{sub 2}Ta{sub 2}O{sub 9}/BaFe{sub 12}O{sub 19} (SBT/BaM), were grown on platinum-coated Si substrates using metal-organic decomposition. X-ray diffraction patterns confirmed that the heterostructures contain only SBT and BaM phases. The microwave properties of these heterostructures were studied using a broadband ferromagnetic resonance (FMR) spectrometer from 35 to 60 GHz, which allowed us to determine gyromagnetic ratio and effective anisotropy field. The FMR linewidth is as low as140 Oe at 58 GHz. In addition, measurements of the effective permittivity of the heterostructures were carried out as a function of bias electric field. All heterostructures exhibit hysteretic behavior of the effective permittivity. These properties indicate that such heterostructures have potential for application in dual electric and magnetic field tunable resonators, filters, and phase shifters.

Chen, Daming, E-mail: chendaming1986@gmail.com [Center for Magnetism and Magnetic Nanostructures, University of Colorado Colorado Springs, 1420 Austin Bluffs Pkwy, Colorado Springs, Colorado 80918 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 Sichuan (China); Harward, Ian; Linderman, Katie; Economou, Evangelos; Celinski, Zbigniew [Center for Magnetism and Magnetic Nanostructures, University of Colorado Colorado Springs, 1420 Austin Bluffs Pkwy, Colorado Springs, Colorado 80918 (United States); Nie, Yan [Center for Magnetism and Magnetic Nanostructures, University of Colorado Colorado Springs, 1420 Austin Bluffs Pkwy, Colorado Springs, Colorado 80918 (United States); School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei 430074 (China)

2014-05-07T23:59:59.000Z

415

Manipulating Josephson junctions in thin-films by nearby vortices  

SciTech Connect

It is shown that a vortex trapped in one of the banks of a planar edge-type Josephson junction in a narrow thin-film superconducting strip can change drastically the dependence of the junction critical current on the applied field, I-c(H). When the vortex is placed at certain discrete positions in the strip middle, the pattern I-c(H) has zero at H = 0 instead of the traditional maximum of '0-type' junctions. The number of these positions is equal to the number of vortices trapped at the same location. When the junction-vortex separation exceeds similar to W, the strip width, I-c(H) is no longer sensitive to the vortex presence. The same is true for any separation if the vortex approaches the strip edges. (C) 2014 Elsevier B.V. All rights reserved.

Kogan, V.G.; Mints, R.G.

2014-07-01T23:59:59.000Z

416

Room-temperature magnetoelectric multiferroic thin films and applications thereof  

DOE Patents (OSTI)

The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.

Katiyar, Ram S; Kuman, Ashok; Scott, James F.

2014-08-12T23:59:59.000Z

417

Characterization of Field Exposed Thin Film Modules: Preprint  

SciTech Connect

Test arrays of thin film modules have been deployed at the Solar Energy Centre near New Delhi, India since 2002-2003. Performances of these arrays were reported by O.S. Sastry [1]. This paper reports on NREL efforts to support SEC by performing detailed characterization of selected modules from the array. Modules were selected to demonstrate both average and worst case power loss over the 8 years of outdoor exposure. The modules characterized included CdTe, CIS and three different types of a-Si. All but one of the a-Si types were glass-glass construction. None of the modules had edge seals. Detailed results of these tests are presented along with our conclusions about the causes of the power loss for each technology.

Wohlgemuth, J. H.; Sastry, O. S.; Stokes, A.; Singh, Y. K.; Kumar, M.

2012-06-01T23:59:59.000Z

418

Asymmetric Reduction of Gold Nanoparticles into Thermoplasmonic Polydimethylsiloxane Thin Films  

Science Journals Connector (OSTI)

This work extends this range to include fabrication and characterization of AuNP-containing asymmetric thin films and shows important advantages relative to uniformly distributed particles via sub-surface introduction of AuNPs at just one interface of a polymer. ... Using a diffusivity of water in PDMS of approximately 2 × 10–9 m2/s,(32) diffusive penetration of water into a semi-infinite PDMS slab would reach approximately 5 cm after 24 h. ... This increase in thermal response relative to previous aqueous, silica, and PDMS samples appears to result from an increase in nanoparticle density relative to insulating PDMS, insulation of the heated layer by a thicker, adjacent gold-free PDMS, and reduction of radiativity of the PDMS relative to planar substrates. ...

Jeremy R. Dunklin; Gregory T. Forcherio; Keith R. Berry, Jr.; D. Keith Roper

2013-08-09T23:59:59.000Z

419

Gain properties of dye-doped polymer thin films  

E-Print Network (OSTI)

The demonstration of an electrically pumped organic laser remains a major issue of organic optoelectronics for several decades. Nowadays, hybrid pumping seems a promising compromise where the organic material is optically pumped by an electrically pumped inorganic device on chip. This technical solution requires therefore an optimization of the organic gain medium under optical pumping. Here, we report a detailed study of gain features of dye-doped polymer thin films, in particular we introduce the gain efficiency $K$, in order to facilitate comparison between material and experimental conditions. First, we measure the bulk gain by the means of a pump-probe setup, and then present in details several factors which modify the actual gain of the layer, namely the confinement factor, the pump polarization, the molecular anisotropy, and the re-absorption. The usual model to evaluate the gain leads to an overestimation by more than one order of magnitude, which stresses the importance to design the devices accordin...

Gozhyk, I; Rabbani, H; Djellali, N; Forget, S; Chenais, S; Ulysse, C; Brosseau, A; Gauvin, S; Zyss, J; Lebental, M

2014-01-01T23:59:59.000Z

420

Generation of mirage effect by heated carbon nanotube thin film  

SciTech Connect

Mirage effect, a common phenomenon in nature, is a naturally occurring optical phenomenon in which lights are bent due to the gradient variation of refraction in the temperature gradient medium. The theoretical analysis of mirage effect generated by heated carbon nanotube thin film is presented both for gas and liquid. Excellent agreement is demonstrated through comparing the theoretical prediction with published experimental results. It is concluded from the theoretical prediction and experimental observation that the mirage effect is more likely to happen in liquid. The phase of deflected optical beam is also discussed and the method for measurement of thermal diffusivity of medium is theoretically verified. Furthermore, a method for measuring the refractive index of gas by detecting optical beam deflection is also presented in this paper.

Tong, L. H. [Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230026 (China); USTC-CityU Joint Advanced Research Centre, Suzhou, Jiangsu 215123 (China); Lim, C. W., E-mail: bccwlim@cityu.edu.hk [USTC-CityU Joint Advanced Research Centre, Suzhou, Jiangsu 215123 (China); Department of Civil and Architectural Engineering, City University of Hong Kong, Kowloon, Hong Kong, People’s Republic of China and City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057 (China); Li, Y. C. [Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Zhang, Chuanzeng; Quoc Bui, Tinh [Department of Civil Engineering, University of Siegen, Paul-Bonatz-Str. 9-11, D-57076 Siegen (Germany)

2014-06-28T23:59:59.000Z

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Bioinspired Ceramic Thin Film Processing:? Present Status and Future Perspectives  

Science Journals Connector (OSTI)

23 When considering the preparation of thin films through a chemical route, one should realize that modern chemistry as a major branch of science and industry should be developed to emphasize low consumption of raw materials and energy, low generation of waste, and producer/user friendliness. ... 40,42a,60b The experimental method involves the measurement of surface forces using a surface force apparatus (SFA)61 and atomic force microscopy (AFM),62 which are used for measuring forces between two macroscopic surfaces or between a fine tip and a surface, respectively. ... The result is a hybrid technique combining ease of use and ability to see into cells using optical microscopy with the higher resolution of electron microscopy. ...

Yanfeng Gao; Kunihito Koumoto

2005-07-26T23:59:59.000Z

422

Structural Studies of Al:ZnO Powders and Thin Films | Stanford Synchrotron  

NLE Websites -- All DOE Office Websites (Extended Search)

Structural Studies of Al:ZnO Powders and Thin Films Structural Studies of Al:ZnO Powders and Thin Films Monday, June 18, 2012 - 2:00pm SSRL Main Conference Room 137-322 Dr. Bridget Ingham, Associate Investigator, MacDiarmid Institute for Advanced Materials & Nanotechnology Al-doped ZnO (Al:ZnO) is a promising transparent conducting oxide. We have used complementary synchrotron and laboratory techniques to study the incorporation of Al within the ZnO lattice, and measure its effect on the crystallinity of thin films prepared by sol-gel techniques, with an aim to understand how these properties affect the film conductivity. I will present recent results from Al:ZnO powders and thin films, prepared with varying Al concentrations and calcination temperatures. Solid state 27Al NMR and ex situ X-ray diffraction (XRD) were performed on Al:ZnO

423

Nitrogen doping in pulsed laser deposited ZnO thin films using dense plasma focus  

Science Journals Connector (OSTI)

Pulsed laser deposition synthesized ZnO thin films, grown at 400 °C substrate temperature in different oxygen gas pressures, were irradiated with 6 shots of pulsed nitrogen ions obtained from 2.94 kJ dense plasma focus to achieve the nitrogen doping in ZnO. Structural, compositional and optical properties of as-deposited and nitrogen ion irradiated ZnO thin films were investigated to confirm the successful doping of nitrogen in irradiated samples. Spectral changes have been seen in the nitrogen irradiated ZnO thin film samples from the low temperature PL measurements. Free electron to acceptor emissions can be observed from the irradiated samples, which hints towards the successful nitrogen doping in films. Compositional analysis by X-ray photoelectron spectroscopy and corresponding shifts in binding energy core peaks of oxygen and nitrogen confirmed the successful use of plasma focus device as a novel source for nitrogen ion doping in ZnO thin films.

S. Karamat; R.S. Rawat; T.L. Tan; P. Lee; S.V. Springham; E. Ghareshabani; R. Chen; H.D. Sun

2011-01-01T23:59:59.000Z

424

Thin Film Encapsulation Methods for Large Area MEMS Packaging  

E-Print Network (OSTI)

penetrated c) Windows in nitride film not clearly visiblea circular window is preferred to minimize film deflection

Mahajerin, Armon

2012-01-01T23:59:59.000Z

425

New frontier in thin film epitaxy and nanostructured materials  

Science Journals Connector (OSTI)

Nanomaterials hold the key to the success of nanotechnology. This review starts with a new paradigm for thin film growth based upon matching of integral multiples of lattice planes across the film-substrate interface. This paradigm of domain matching epitaxy (DME) unifies small as well as large misfit systems utilising the concept of systematic domain variation. By controlling the kinetics of clustering and energetics of interfaces, it is possible to obtain nanoclusters of uniform size and create novel nanostructured materials by design, where relative orientation with respect to matrix can be controlled by DME. In nanostructured materials with unit dimensions 1â??100 nm, science and processing challenges include self-assembly processing, control of interfacial atoms and energetics, quantum confinement issues, nanoscale structure-property correlations. In addition, metastability of interfaces should be controlled for reliability in manufacturing of nanosystems. This paper presents fundamentals of synthesis and processing of nanomaterials, role of interfaces, nanoscale characterisation to establish atomic structure-property correlations and modelling to create novel nanostructured structural, magnetic, photonic and electronic systems with unique and improved properties for next-generation systems with new functionality.

Jagdish Narayan

2009-01-01T23:59:59.000Z

426

ALD and Pulsed CVD of Ruthenium and Ruthenium Dioxide Thin Films From an Amidinate Precursor  

E-Print Network (OSTI)

Narrow window of O2 exposure (e.g. 0.02~0.04 Torr·s @ 325ºC) to obtain high quality pure Ru filmALD and Pulsed CVD of Ruthenium and Ruthenium Dioxide Thin Films From an Amidinate Precursor Xinwei, China Introduction Experimental ALD with O2 Ru metal film Pulsed CVD with NH3+H2 Ru metal film Pulsed

427

COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces  

NLE Websites -- All DOE Office Websites (Extended Search)

COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces Coherent Bragg rod analyses (COBRA) experiments using synchrotron x-rays at Argonne's Advanced Photon Source (MHATT-CAT and PNC-CAT beamlines) directly revealed the sub-angstrom atomic interaction of epitaxial films with substrates. Information on how atoms in the adjoining layers of the film and substrate rearrange to mimic each other may lead to improvements in semiconductor manufacturing and the development of novel heterostructure materials, such as multilayer ferroelectrics, magnetic nanostructures and thin film superconductors. COBRA electron density map of a Gd2O3 film on a gallium arsenide substrate. The peaks correspond to folded Gd atomic positions parallel to the plane of the substrate.

428

The catalytic reactivity of thin film crystal surfaces: Annual technical progress report  

SciTech Connect

Research is being conducted on Cu/Pd and Pd/Cu thin films. Work has been completed on the following: Work Function Studies on Epitaxial Cu/Pd Bilayer Films; Kinetics of CO and Oxygen Adsorption on Smooth and Sputtered Epitaxial Pd(lll) Films on Mica; A Simple Model for the Auger Electron Spectroscopy Evaluation of Thin Film Layer Growth Systems in Which Substrate-Overgrowth Mixing Occurs. Work in progress includes: AES of the Growth of Pd on (lll)Cu and Cu on (lll)Pd; Catalysis of the CO Oxidation Reaction on Epitaxial Cu/Pd Bilayer Films; Thermal Desorption Spectroscopy of CO from Various Thin Film Cu/Pd Bilayers; LEED Measurements; Kinetics of Adsorption of CO on Various Cu/Pd Bilayers. 7 figs.

Vook, R.W.

1988-02-15T23:59:59.000Z

429

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof  

DOE Patents (OSTI)

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Perkins, John (Boulder, CO); Van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David (Evergreen, CO); Taylor, Matthew (Golden, CO); Neuman, George A. (Holland, MI); Luten, Henry A. (Holland, MI); Forgette, Jeffrey A. (Hudsonville, MI); Anderson, John S. (Holland, MI)

2010-07-13T23:59:59.000Z

430

Scanning electrochemical microscope characterization of thin film combinatorial libraries for fuel cell electrode applications  

Science Journals Connector (OSTI)

Pt–Ru combinatorial libraries of potential fuel cell anode catalysts are formed by sequential sputter deposition through masks onto Si wafers. Scanning electrochemical microscopy (SECM) is employed for characterization of electrocatalytic activity. Aspects of using a scanning electrochemical microscope for characterization of an array of thin film fuel cell electrode materials are discussed. It is shown that in applying SECM to library characterization, careful attention must be paid to thin film annealing, specimen topography and tip degradation in order to realize meaningful results. Results from a Pt–Ru thin film library reveal the most active members near the 50 Pt/50 Ru composition.

M Black; J Cooper; P McGinn

2005-01-01T23:59:59.000Z

431

Highly Transparent, Flexible, and Thermally Stable Superhydrophobic ORMOSIL Aerogel Thin Films  

Science Journals Connector (OSTI)

(9, 22) On the other hand, ORMOSIL aerogel thin films produced in this work are highly transparent, do not need any pre or post surface treatments and can be applied on a variety of substrates including glass, wood, and plastics at ambient conditions with common thin-film deposition methods such as spin, dip, and spray coating. ... (b) Photographs of ORMOSIL aerogel thin films coated on glass substrates. ... This makes it possible to coat superhydrophobic aerogels on many different surfaces other than glass, including wood, wall tile, aluminum slab, cotton cloth, and plastics, which enables fast and easy production of large-scale superhydrophobic coatings. ...

Hulya Budunoglu; Adem Yildirim; Mustafa O. Guler; Mehmet Bayindir

2011-01-12T23:59:59.000Z

432

Enhancing performance of a linear dielectric based concentrating photovoltaic system using a reflective film along the edge  

Science Journals Connector (OSTI)

Abstract In the present study, we model and analyse the performance of a dielectric based linear concentrating photovoltaic system using ray tracing and finite element methods. The results obtained are compared with the experiments. The system under study is a linear asymmetric CPC (Compound Parabolic Concentrator) designed to operate under extreme incident angles of 0° and 55° and have a geometrical concentration ratio of 2.8×. Initial experiments showed a maximum PR (power ratio) of 2.2 compared to a non concentrating counterpart. An improvement to this has been proposed and verified by adding a reflective film along the edges of the concentrator to capture the escaping rays and minimise optical losses. The addition of the reflective film changes the incoming distribution on the solar cell. Results show an increase of 16% in the average power output while using this reflective film. On including the thermal effects it was found that the overall benefit changes to about 6% while using a reflective film. Additionally, the effects of the non-uniformity of the incoming radiation are also analysed and reported for both the cases. It is found that adding the reflective film drops the maximum power at the output by only 0.5% due to the effect of non-uniformity.

Hasan Baig; Nabin Sarmah; Daniel Chemisana; Joan Rosell; Tapas K. Mallick

2014-01-01T23:59:59.000Z

433

Nanostructured silicon thin films deposited by PECVD in the presence of silicon nanoparticles  

SciTech Connect

Nanostructured silicon thin films have been deposited by plasma enhanced chemical vapor deposition at low substrate temperature (100 C) in the presence of silicon nanoparticles. The nanostructure of the films was revealed by transmission electron microscopy, Raman spectroscopy and X-ray diffraction, which showed ordered silicon domains (1--2 nm) embedded in an amorphous silicon matrix. These ordered domains are due to the particles created in the discharge that contribute to the film growth. One consequence of the incorporation of nanoparticles is the accelerated crystallization of the nanostructured silicon thin films when compared to standard a-Si:H, as shown by the electrical characterization during the annealing.

Viera, G.; Cabarrocas, P.R.; Hamma, S.; Sharma, S.N.; Costa, J.; Bertran, E.

1997-07-01T23:59:59.000Z

434

Crystal coherence length effects on the infrared optical response of MgO thin films.  

SciTech Connect

The role of crystal coherence length on the infrared optical response of MgO thin films was investigated with regard to Reststrahlen band photon-phonon coupling. Preferentially (001)-oriented sputtered and evaporated ion-beam assisted deposited thin films were prepared on silicon and annealed to vary film microstructure. Film crystalline coherence was characterized by x-ray diffraction line broadening and transmission electron microscopy. The infrared dielectric response revealed a strong dependence of dielectric resonance magnitude on crystalline coherence. Shifts to lower transverse optical phonon frequencies were observed with increased crystalline coherence. Increased optical phonon damping is attributed to increasing granularity and intergrain misorientation.

Boreman, Glenn D. (University of Central Florida, Orlando, FL); Kotula, Paul Gabriel; Rodriguez, Mark Andrew; Shelton, David J. (University of Central Florida, Orlando, FL); Carroll, James F., III; Sinclair, Michael B.; Ihlefeld, Jon F.; Ginn, James Cleveland, III; Clem, Paul Gilbert; Matias, Vladimir (Los Alamos National Laboratory, Los Alamos, NM)

2010-07-01T23:59:59.000Z

435

Crystal coherence length effects on the infrared optical response of MgO thin films  

SciTech Connect

The role of crystal coherence length on the infrared optical response of MgO thin films was investigated with regard to Reststrahlen band photon-phonon coupling. Preferentially (001)-oriented sputtered and evaporated ion-beam assisted deposited thin films were prepared on silicon and annealed to vary film microstructure. Film crystalline coherence was characterized by x-ray diffraction line broadening and transmission electron microscopy. The infrared dielectric response revealed a strong dependence of dielectric resonance magnitude on crystalline coherence. Shifts to lower transverse optical phonon frequencies were observed with increased crystalline coherence. Increased optical phonon damping is attributed to increasing granularity and intergrain misorientation.

Ihlefeld, J. F.; Ginn, J. C.; Rodriguez, M. A.; Kotula, P. G.; Carroll, J. F. III; Clem, P. G.; Sinclair, M. B. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Shelton, D. J.; Boreman, G. D. [College of Optics and Photonics/CREOL, University of Central Florida, Orlando, Florida 32816 (United States); Matias, V. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

2010-11-08T23:59:59.000Z

436

Holographic Thin Film System for Multijunction Solar Cells  

Science Journals Connector (OSTI)

The efficiency of photovoltaic generators based on different semiconductor materials with optimized band gaps can achieve considerably higher values than those obtained with single junction solar cells. For th...

W. H. Bloss; M. Griesinger; E. R. Reinhardt

1983-01-01T23:59:59.000Z

437

Three approaches to economical photovoltaics: conformal Cu2S, organic luminescent films, and PbSe nanocrystal superlattices  

E-Print Network (OSTI)

Degradation in CDS-Cu2S photovoltaic cells. Semiconductorcell with cuins2: A photovoltaic cell concept using an ex-and the the photovoltaic action in solar cell devices. The

Carbone, Ian Anthony

2013-01-01T23:59:59.000Z

438

Interfacial studies of a thin-film Li2Mn4O9 electrode  

NLE Websites -- All DOE Office Websites (Extended Search)

Interfacial studies of a thin-film Li2Mn4O9 electrode Interfacial studies of a thin-film Li2Mn4O9 electrode Title Interfacial studies of a thin-film Li2Mn4O9 electrode Publication Type Journal Article Year of Publication 1999 Authors Kostecki, Robert, Fanping Kong, Yoshiaki Matsuo, and Frank R. McLarnon Journal Electrochimica Acta Volume 45 Pagination 225-233 Keywords interfacial films, manganese oxide electrode Abstract A thin-film spinel Li2Mn4O9 electrode was prepared by spin coating onto a Pt substrate. Spectroscopic ellipsometry, X-ray diffraction and current-sensing atomic force microscopy (CSAFM) were used to characterize interfacial processes and film formation at this electrode in the presence of 1.0 M LiPF6, EC:DMC (1:1 by volume) electrolyte. Prolonged exposure of the film to the electrolyte at ambient temperature resulted in spontaneous decomposition of the spinel to λ-MnO2 without disruption of the original structure. The surface of the resulting λ-MnO2 film exhibited no significant change in morphology, however a thin passive electrode surface layer was detected by the CSAFM probe. This electrode surface layer exhibited insulating properties and most likely contained Li2O, a by-product of Li2Mn4O9 decomposition.

439

Room temperature ferromagnetism in Co defused CdTe nanocrystalline thin films  

SciTech Connect

Nanocrystalline Co defused CdTe thin films were prepared using electron beam evaporation technique by depositing CdTe/Co/CdTe stacked layers with different Co thickness onto glass substrate at 373 K followed by annealing at 573K for 2 hrs. Structural, morphological and magnetic properties of of all the Co defused CdTe thin films has been investigated. XRD pattern of all the films exhibited zinc blende structure with <111> preferential orientation without changing the crystal structure of the films. The grain size of the films increased from 31.5 nm to 48.1 nm with the increase of Co layer thickness from 25nm to 100nm. The morphological studies showed that uniform texture of the films and the presence of Co was confirmed by EDAX. Room temperature magnetization curves indicated an improved ferromagnetic behavior in the films with increase of the Co thickness.

Rao, N. Madhusudhana; Kaleemulla, S.; Begam, M. Rigana [Materials Physics Division, School of Advanced Sciences, VIT University, Vellore - 632 014 (India)

2014-04-24T23:59:59.000Z

440

Flat panel display using Ti-Cr-Al-O thin film  

DOE Patents (OSTI)

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Jankowski, Alan F. (Livermore, CA); Schmid, Anthony P. (Solan Beach, CA)

2002-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Femtosecond pump-probe studies of reduced graphene oxide thin films  

E-Print Network (OSTI)

The dynamics of photocarriers in reduced graphene oxide thin films is studied by using ultrafast pump-probe spectroscopy. Time dependent differential transmissions are measured with sample temperatures ranging from 9 to 300 K. At each sample...

Ruzicka, Brian Andrew; Werake, Lalani Kumari; Zhao, Hui; Wang, Shuai; Loh, Kian Ping

2010-04-01T23:59:59.000Z

442

Designing Randomness - The Impact of Textured Surfaces on the Efficiency of Thin-Film Solar Cells  

Science Journals Connector (OSTI)

We analyze experimentally and theoretically light localization at randomly textured ZnO surfaces and light absorption in thin-film amorphous Si deposited conformal on it. Guidance is...

Beckers, Thomas; Bittkau, Karsten; Carius, Reinhard; Fahr, Stephan; Rockstuhl, Carsten; Lederer, Falk

443

Design of plasmonic back structures for efficiency enhancement of thin-film amorphous Si solar cells  

Science Journals Connector (OSTI)

Metallic back structures with one-dimensional periodic nanoridges attached to a thin-film amorphous Si (a-Si) solar cell are numerically studied. At the interfaces between a-Si and...

Bai, Wenli; Gan, Qiaoqiang; Bartoli, Filbert; Zhang, Jing; Cai, Likang; Huang, Yidong; Song, Guofeng

2009-01-01T23:59:59.000Z

444

Plasmonic Back Structures Designed for Efficiency Enhancement of Thin Film Solar Cells  

Science Journals Connector (OSTI)

Metallic back structures with one-dimensional periodic nanoridges attached to thin-film amorphous silicon (a-Si) solar cell are proposed to enhance the cell efficiency in a wide...

Bai, Wenli; Gan, Qiaoqiang; Bartoli, Filbert; Song, Guofeng

445

Nanoscale Materials for Thin Film Cu(In,Ga)Se2 Solar Cells  

Science Journals Connector (OSTI)

Cu(In,Ga)Se2 solar cells show the highest efficiencies of all thin film technologies. Nano-particulate precursor materials could have the potential to lead this technology to...

Ahlswede, Erik

446

Optimization-based design of surface textures for thin-film Si solar cells  

E-Print Network (OSTI)

We numerically investigate the light-absorption behavior of thin-film silicon for normal-incident light, using surface textures to enhance absorption. We consider a variety of texture designs, such as simple periodic ...

Sheng, Xing

447

Polyelectrolyte multilayer thin films with antimicrobial, antifouling and drug releasing properties  

E-Print Network (OSTI)

This thesis work focuses on designing thin polyelectrolyte multilayer (PEM) films via layer-bylayer (LbL) deposition technique with the ability to kill pathogenic bacteria and inactivate human viruses, especially the ...

Wong, Sze Yinn (Sze Yinn Jessie)

2011-01-01T23:59:59.000Z

448

Efficient Föster energy transfer : from phosphorescent organic molecules to J-aggregate thin film  

E-Print Network (OSTI)

This thesis demonstrates the first ever use of Forster resonance energy transfer (FRET) to increase the quantum efficiency of a electrically pumped J-aggregate light emitting device (JLED). J-aggregate thin films are highly ...

Shirasaki, Yasuhiro

2008-01-01T23:59:59.000Z

449

Micro/nano devices fabricated from Cu-Hf thin films  

DOE Patents (OSTI)

An all-metal microdevice or nanodevice such as an atomic force microscope probe is manufactured from a copper-hafnium alloy thin film having an x-ray amorphous microstructure.

Luber, Erik J; Ophus, Colin; Mitlin, David; Olsen, Brian; Harrower, Christopher; Radmilovi, Velimir

2013-06-04T23:59:59.000Z

450

Apparatus for making cathodo- and photo- luminescent measurements of thin film phosphors  

E-Print Network (OSTI)

the understanding of the thin film phosphor, tungsten doped zinc oxide. Principally, a vacuum system is constructed and provides for both photo-and cathode-phosphor excitations. A measurement capability is then included. Finally, additions are mentioned...

Babuchna, Paul Michael

1998-01-01T23:59:59.000Z

451

Unpolarized emissivity of thin oil films over anisotropic Gaussian seas in infrared window regions  

Science Journals Connector (OSTI)

In this paper, we derive the unpolarized infrared (IR) emissivity of thin oil films over anisotropic Gaussian seas from a refined physical surface spectrum model of damping due to...

Pinel, Nicolas; Bourlier, Christophe; Sergievskaya, Irina

2010-01-01T23:59:59.000Z

452

Impurity and back contact effects on CdTe/CdS thin film solar cells.  

E-Print Network (OSTI)

??CdTe/CdS thin film solar cells are the most promising cost-effective solar cells. The goal of this project is to improve the performance for CdS/CdTe devices… (more)

Zhao, Hehong

2008-01-01T23:59:59.000Z

453

Polymeric precursor derived nanocrystalline ZnO thin films using EDTA as chelating agent  

E-Print Network (OSTI)

properties, ZnO has plausible electro-optical applications, such as, solar cells [1, 2], light- emitting diodes [3, 4], UV lasers [5], thin film transistors [6,7], and UV photodetectors [8]. Besides

Mohanty, Saraju P.

454

Transparent and Conductive Carbon Nanotube Multilayer Thin Films Suitable as an Indium Tin Oxide Replacement  

E-Print Network (OSTI)

Transparent electrodes made from metal oxides suffer from poor flexibility and durability. Highly transparent and electrically conductive thin films based on carbon nanotubes (CNTs) were assembled as a potential indium tin oxide (ITO) replacement...

Park, Yong Tae

2012-07-16T23:59:59.000Z

455

Strain effect on coercive field of epitaxial barium titanate thin films S. Choudhury,1,a  

E-Print Network (OSTI)

reduced to zero and coercive field electric field re- quired to reduce the net polarization to zero . From of magnitude higher compared to a thin film under zero substrate strain.11 However, some reports show

Chen, Long-Qing

456

Active-head sliders using piezoelectric thin films for flying height control  

Science Journals Connector (OSTI)

This paper describes design and fabrication of a MEMS-based active-head slider using a PZT thin film for flying height control in hard disk drives. A piezoelectric cantilever integrated in the ... air bearing sli...

Kenji Suzuki; Takayuki Akimatsu; Kenji Sasaki; Masayuki Kurita

2005-08-01T23:59:59.000Z

457

Theory of first-order layering transitions in thin helium films  

E-Print Network (OSTI)

Thin liquid He-4 films on graphite show evidence of layered growth with increasing number density via a succession of first-order phase transitions. These so-called ''layering transitions'' separate uniformly covering phases, such as monolayers...

Saslow, WM; Agnolet, Glenn; Campbell, CE; Clements, BE; Krotscheck, E.

1996-01-01T23:59:59.000Z

458

Solid state thin film battery having a high temperature lithium alloy anode  

DOE Patents (OSTI)

An improved rechargeable thin-film lithium battery involves the provision of a higher melting temperature lithium anode. Lithium is alloyed with a suitable solute element to elevate the melting point of the anode to withstand moderately elevated temperatures.

Hobson, David O. (Oak Ridge, TN)

1998-01-01T23:59:59.000Z

459

Analysis of potential applications for the templated dewetting of metal thin films  

E-Print Network (OSTI)

Thin films have a high surface-to-volume ratio and are therefore usually morphologically unstable. They tend to reduce their surface energy through transport of mass by diffusion. As a result, they decay into a collection ...

Frantzeskakis, Emmanouil

2005-01-01T23:59:59.000Z

460

E-Print Network 3.0 - ag thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

new range of high... -stability thin-film resistors has been introduced to meet growing market requirements for passive components Source: Berns, Hans-Gerd - HaGe's homepage,...

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Chemical vapor deposition of conjugated polymeric thin films for photonic and electronic applications  

E-Print Network (OSTI)

(cont.) Conjugated polymers have delocalized electrons along the backbone, facilitating electrical conductivity. As thin films, they are integral to organic semiconductor devices emerging in the marketplace, such as flexible ...

Lock, John P

2005-01-01T23:59:59.000Z

462

Layer-by-Layer Assembly of a pH-Responsive and Electrochromic Thin Film  

E-Print Network (OSTI)

This article summarizes an experiment on thin-film fabrication with layer-by-layer assembly that is appropriate for undergraduate laboratory courses. The purpose of this experiment is to teach students about self-assembly ...

Schmidt, Daniel J.

463

Metallic to insulating transition in disordered pulsed laser deposited silicide thin films.  

E-Print Network (OSTI)

??A metal-to-insulating transition has been observed in iron, iron oxide, iron silicide and cobalt silicide thin films when deposited on Si substrate with a native… (more)

Abou Mourad, Houssam

2005-01-01T23:59:59.000Z

464

Towards Large Area Industrial Cost Competitive Coating for Thin Film Solar Electricity Production  

Science Journals Connector (OSTI)

Thin film PV market faces a struggling situation due to the need of reducing strongly prices, which can be done by increasing efficiency and reducing fabrication costs. Improvement of...

Bermudez, Veronica

465

Earth-Abundant Materials for High-Efficiency Heterojunction Thin Film Solar Cells  

Science Journals Connector (OSTI)

We investigate materials for thin film solar cells that can meet tens of terawatts level deployment potential. As one of the candidates, cuprous oxide (Cu2O) is synthesized and...

Lee, Yun Seog; Bertoni, Mariana; Buonassisi, Tonio

466

Nanotribology: an UHV-SFM study on thin films of AgBr(001)  

Science Journals Connector (OSTI)

We performed scanning force microscopy (SFM) in ultrahigh vacuum (UHV) on AgBr thin films which were in... x tip and AgBr and NaCl, respectively. The two-dimensional histogram r...

R. Lüthi; E. Meyer; H. Haefke; L. Howald; H. -J. Güntherodt

1995-06-01T23:59:59.000Z

467

Thin film lithium-based batteries and electrochromic devices fabricated with nanocomposite electrode materials  

DOE Patents (OSTI)

Thin-film lithium-based batteries and electrochromic devices (10) are fabricated with positive electrodes (12) comprising a nanocomposite material composed of lithiated metal oxide nanoparticles (40) dispersed in a matrix composed of lithium tungsten oxide.

Gillaspie, Dane T; Lee, Se-Hee; Tracy, C. Edwin; Pitts, John Roland

2014-02-04T23:59:59.000Z

468

The bias-stress effect in pentacene organic thin-film transistors  

E-Print Network (OSTI)

Organic thin-film transistors (OTFTs) are promising for flexible large-area electronics. However, the bias-stress effect (BSE) in OTFTs causes operational instability that limits the usefulness of the OTFT technology in a ...

Ryu, Kyungbum

2010-01-01T23:59:59.000Z

469

Evaluation on the thin-film phase change material-based technologies  

E-Print Network (OSTI)

Two potential applications of thin film phase-change materials are considered, non-volatile electronic memories and MEMS (Micro-Electro-Mechanical Systems) actuators. The markets for those two applications are fast growing ...

Guo, Qiang, M. Eng. Massachusetts Institute of Technology

2006-01-01T23:59:59.000Z

470

Polycrystalline silicon thin-film solar cells on glass by ion-assisted deposition.  

E-Print Network (OSTI)

??Polycrystalline silicon (pc-Si, grain size > 1??m, no amorphous tissue) on glass is an interesting material for thin-film solar cells due to the low costs,… (more)

Straub, Axel

2005-01-01T23:59:59.000Z

471

Nanoparticle-based lift-off technique for ultra-thin nanoporous film preparation  

Science Journals Connector (OSTI)

Ultra-thin membrane with nanoscale through hole has great potential in biomedical applications, where precise controllability of porosity, pore size and film thickness is urgently required. The present work propo...

Wei Wang; Yu Zhao; YinHua Lei…

2008-06-01T23:59:59.000Z

472

Thermal Conductivity of Ordered Mesoporous Nanocrystalline Silicon Thin Films Made from Magnesium Reduction of Polymer-  

E-Print Network (OSTI)

Thermal Conductivity of Ordered Mesoporous Nanocrystalline Silicon Thin Films Made from Magnesium-assembly of mesoporous silica followed by magnesium reduction. The periodic ordering of pores in mesoporous silicon

Pilon, Laurent

473

Electrochemical properties of magnetron sputtered WO{sub 3} thin films  

SciTech Connect

Thin films of tungsten oxide (WO{sub 3}) were deposited on ITO substrates by using RF magnetron sputtering at oxygen and argon atmospheres of 6 Multiplication-Sign 10{sup -2}Pa and 4 Pa respectively. The chemical composition and surface morphology of the WO{sub 3} thin films have been studied by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) respectively. The results indicate that the deposited WO{sub 3} thin films are nearly stoichiometric. The electrochemical performances of the WO{sub 3} thin films have been evaluated by galvonostatic charging/discharging method. The discharge capacity was 15{mu}Ah/cm{sup 2}{mu}m at the initial cycle and faded rapidly in the first few cycles and stabilized at a lesser stage.

Madhavi, V.; Kondaiah, P.; Hussain, O. M.; Uthanna, S. [Department of Physics, Sri Venkateswara University, Tirupati - 517 502 (India)

2013-02-05T23:59:59.000Z

474

Technological assessment of light-trapping technology for thin-film Si solar cell  

E-Print Network (OSTI)

The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was analyzed from the technology, market, and ...

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

475

Integrated photonic structures for light trapping in thin-film Si solar cells  

E-Print Network (OSTI)

We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

Sheng, Xing

476

Kläui Ligand Thin Films for Rapid Plutonium Analysis by Alpha Spectrometry  

Science Journals Connector (OSTI)

Safety Considerations ... To further assess the use of the Kläui ligand thin films for environmental samples, a sample of contaminated Rocky Flats soil (NIST Standard Reference Material 4353A) was analyzed for plutonium. ...

Susan K. Hanson; Alexander H. Mueller; Warren J. Oldham, Jr.

2014-01-07T23:59:59.000Z

477

Effect of the nitrogen ion energy on the MBE growth of thin gallium nitride films  

Science Journals Connector (OSTI)

The influence of the energy of bombarding nitrogen ions on the growth of thin gallium nitride (GaN) films under molecular beam epitaxy (MBE) conditions has been simulated using the method of balance kinetic eq...

D. V. Kulikov; Yu. V. Trushin; V. S. Kharlamov

2010-03-01T23:59:59.000Z

478

Single Source Electron Beam Evaporation of Bi-Sr-Ca-Cu-O Thin Films  

Science Journals Connector (OSTI)

A modified electron beam evaporation technique for the deposition of BiSrCaCuO thin films has been developed. In contrast to the conventional hearthed electron beam crucible the design in the present study use...

M. Ghanashyam Krishna; G. K. Muralidhar…

1990-01-01T23:59:59.000Z

479

Dimensional dependence of electric resistance of thin TiB2 films  

Science Journals Connector (OSTI)

The dimensional effect of electrical resistance in thin films of TiB2 has been studied. Experimental results were processed within the framework of the Fuchs-Sondheimer theory. This has enabled us to estimate the...

A. S. Dranenko; L. A. Dvorina

480

Photocatalytic performance of TiO2 thin films connected with Cu micro-grid  

Science Journals Connector (OSTI)

Aiming at reducing the recombination of photo-induced carriers in semiconductor photocatalytic process, we prepared TiO2...thin film with its surface modified by a connected Cu micro-grid via a microsphere lithog...

HaiLing Zhu; JunYing Zhang; TianMin Wang…

2009-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film photovoltaic" from the National Library of EnergyBeta (NLEBeta).
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481

Energy collection and charge transfer processes in thin film photocells and photoelectrochemical cells: Final report  

SciTech Connect

The following paragraphs describe accomplishments and significant results for the two lines of research: (1) studies of energy collection and charge transfer processes in thin film systems and (2) solar energy utilization by photosensitized electrode processes at semiconductor electrodes.

Tachikawa, Hiroyasu

1981-12-31T23:59:59.000Z

482

MELT-MEDIATED LASER CRYSTALLIZATION OF THIN FILM NITI SHAPE MEMORY ALLOYS  

E-Print Network (OSTI)

matrix displays (e.g. LCD and OLED) as well as the active medium in thin film solar cells [4 of furnace, solid phase crystallization parameters (i.e. annealing temperature and dwell time

Yao, Y. Lawrence

483

Band-Gap Reduction and Dopant Interaction in Epitaxial La,Cr Co-doped SrTiO3 Thin Films  

SciTech Connect

We show that by co-doping SrTiO3 (STO) epitaxial thin films with equal amounts of La and Cr it is possible to produce films with an optical band gap ~0.9 eV lower than that of undoped STO. Sr1-xLaxTi1-xCrxO3 thin films were deposited by molecular beam epitaxy and characterized using x-ray photoelectron spectroscopy and x-ray absorption near-edge spectroscopy to show that the Cr dopants are almost exclusively in the Cr3+ oxidation state. Extended x-ray absorption fine structure measurements and theoretical modeling suggest that it is thermodynamically preferred for La and Cr dopants to occupy nearest neighbor A- and B-sites in the lattice. Transport measurements show that the material exhibits variable-range hopping conductivity with high resistivity. These results create new opportunities for the use of doped STO films in photovoltaic and photocatalytic applications.

Comes, Ryan B.; Sushko, Petr; Heald, Steve M.; Colby, Robert J.; Bowden, Mark E.; Chambers, Scott A.

2014-12-03T23:59:59.000Z

484

Layer-by-layer assembly of electrically conductive polymer thin films  

E-Print Network (OSTI)

) to deposit layers of carbon black that are pre-stabilized with polyethylenimine (PEI) and poly(acrylic acid) (PAA) (see chemical structures in Fig. 3). The resulting films are thin, flexible, and relatively dense, with a high concentration of carbon black... within the deposition mixtures is described in Chapter III. Materials and Methods Materials Two types of polymers were used to stabilize carbon black for layer-by-layer (LbL) assembly of composite thin films. Poly(acrylic acid) (PAA...

Jan, Chien Sy Jason

2007-09-17T23:59:59.000Z

485

Metal-semiconductor hybrid thin films in field-effect transistors  

SciTech Connect

Metal-semiconductor hybrid thin films consisting of an amorphous oxide semiconductor and a number of aluminum dots in different diameters and arrangements are formed by electron beam lithography and employed for thin-film transistors (TFTs). Experimental and computational demonstrations systematically reveal that the field-effect mobility of the TFTs enhances but levels off as the dot density increases, which originates from variations of the effective channel length that strongly depends on the electric field distribution in a transistor channel.

Okamura, Koshi, E-mail: koshi.okamura@kit.edu; Dehm, Simone [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany)] [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany); Hahn, Horst [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany) [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany); KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt, Petersenstr. 32, 64287 Darmstadt (Germany)

2013-12-16T23:59:59.000Z

486

Vibrational spectra of CO adsorbed on oxide thin films: A tool to probe the surface defects and phase changes of oxide thin films  

SciTech Connect

Thin films of iron oxide were grown on Pt(111) single crystals using cycles of physical vapor deposition of iron followed by oxidative annealing in an ultrahigh vacuum apparatus. Two procedures were utilized for film growth of ?15–30 ML thick films, where both procedures involved sequential deposition+oxidation cycles. In procedure 1, the iron oxide film was fully grown via sequential deposition+oxidation cycles, and then the fully grown film was exposed to a CO flux equivalent to 8 × 10{sup ?7} millibars, and a vibrational spectrum of adsorbed CO was obtained using infrared reflection-absorption spectroscopy. The vibrational spectra of adsorbed CO from multiple preparations using procedure 1 show changes in the film termination structure and/or chemical nature of the surface defects—some of which are correlated with another phase that forms (“phase B”), even before enough of phase B has formed to be easily detected using low energy electron diffraction (LEED). During procedure 2, CO vibrational spectra were obtained between deposition+oxidation cycles, and these spectra show that the film termination structure and/or chemical nature of the surface defects changed as a function of sequential deposition+oxidation cycles. The authors conclude that measurement of vibrational spectra of adsorbed CO on oxide thin films provides a sensitive tool to probe chemical changes of defects on the surface and can thus complement LEED techniques by probing changes not visible by LEED. Increased use of vibrational spectra of adsorbed CO on thin films would enable better comparisons between films grown with different procedures and by different groups.

Savara, Aditya, E-mail: savaraa@ornl.gov [Chemical Sciences Division, Oak Ridge National Lab, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831 (United States)

2014-03-15T23:59:59.000Z

487

Indium doped zinc oxide nanowire thin films for antireflection and solar absorber coating applications  

SciTech Connect

Indium doped ZnO nanowire thin films were prepared by thermal oxidation of Zn-In metal bilayer films at 500°C. The ZnO:In nanowires are 20-100 nm in diameter and several tens of microns long. X-ray diffraction patterns confirm the formation of oxide and indicate that the films are polycrystalline, both in the as deposited and annealed states. The transmission which is <2% for the as deposited Zn-In films increases to >90% for the ZnO:In nanowire films. Significantly, the reflectance for the as deposited films is < 10% in the region between 200 to 1500 nm and < 2% for the nanowire films. Thus, the as deposited films can be used solar absorber coatings while the nanowire films are useful for antireflection applications. The growth of nanowires by this technique is attractive since it does not involve very high temperatures and the use of catalysts.

Shaik, Ummar Pasha [ACRHEM, University of Hyderabad, Hyderabad-500046 (India); Krishna, M. Ghanashyam, E-mail: mgksp@uohyd.ac.in [ACRHEM and School of Physics, University of Hyderabad, Hyderabad-500046 (India)

2014-04-24T23:59:59.000Z

488

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY  

E-Print Network (OSTI)

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION, A. N. Tiwari Thin Film Physics Group, Laboratory for Solid State Physics, Technopark ETH-Building, Technoparkstr. 1, CH-8005 Zurich, Switzerland ABSTRACT: CdTe/CdS thin £lm solar cells have been grown by closed

Romeo, Alessandro

489

Enhanced stability of a dewetting thin liquid film in a single-frequency vibration field S. Shklyaev,1  

E-Print Network (OSTI)

amplitude equation for the averaged film thickness. We show that there exists a window in the frequencyEnhanced stability of a dewetting thin liquid film in a single-frequency vibration field S; published 31 March 2008 Dynamics of a thin dewetting liquid film on a vertically oscillating substrate

Khenner, Mikhail

490

Thin Film Cracking Modulated by Underlayer Creep by J. Liang, R. Huang, J.H. Prvost, and Z. Suo  

E-Print Network (OSTI)

: subcritical decohesion at the crack tip, and creep in the underlayer. In a thin-film microbridge over for the growth rate per temperature cycle of a channel crack in a brittle film, induced by ratcheting plasticThin Film Cracking Modulated by Underlayer Creep by J. Liang, R. Huang, J.H. Prévost, and Z. Suo

Huang, Rui

491

Bendable single crystal silicon thin film transistors formed by printing on plastic substrates  

E-Print Network (OSTI)

Bendable single crystal silicon thin film transistors formed by printing on plastic substrates E on plastic substrates using an efficient dry transfer printing technique. In these devices, free standing-Si is then transferred, to a specific location and with a controlled orientation, onto a thin plastic sheet

Rogers, John A.

492

May 2003 NREL/CP-520-33933 Amorphous and Thin-Film  

E-Print Network (OSTI)

Roedern, J. Yang, P. Sims, X. Deng, V. Dalal, D. Carlson, and T. Wang Presented at the National and Thin-Film Silicon Brent P. Nelson,1 Harry A. Atwater,2 Bolko von Roedern,1 Jeff Yang,3 Paul Sims,4. (c) "Thin Silicon-on-Ceramic Solar Cells" by Paul Sims. (d

Deng, Xunming

493

Thin-film fiber optic hydrogen and temperature sensor system  

DOE Patents (OSTI)

The invention discloses a sensor probe device for monitoring of hydrogen gas concentrations and temperatures by the same sensor probe. The sensor probe is constructed using thin-film deposition methods for the placement of a multitude of layers of materials sensitive to hydrogen concentrations and temperature on the end of a light transparent lens located within the sensor probe. The end of the lens within the sensor probe contains a lens containing a layer of hydrogen permeable material which excludes other reactive gases, a layer of reflective metal material that forms a metal hydride upon absorbing hydrogen, and a layer of semi-conducting solid that is transparent above a temperature dependent minimum wavelength for temperature detection. The three layers of materials are located at the distal end of the lens located within the sensor probe. The lens focuses light generated by broad-band light generator and connected by fiber-optics to the sensor probe, onto a reflective metal material layer, which passes through the semi-conducting solid layer, onto two optical fibers located at the base of the sensor probe. The reflected light is transmitted over fiber optic cables to a spectrometer and system controller. The absence of electrical signals and electrical wires in the sensor probe provides for an elimination of the potential for spark sources when monitoring in hydrogen rich environments, and provides a sensor free from electrical interferences. 3 figs.

Nave, S.E.

1998-07-21T23:59:59.000Z

494

Epitaxial Pb(Zr, Ti)O3 thin films with coexisting tetragonal and rhombohedral phases  

Science Journals Connector (OSTI)

Epitaxial Pb(Zr, Ti)O3 thin films having coexisting tetragonal and rhombohedral phases have been successfully fabricated with the film compositions that correspond to the Zr-rich region of the morphotropic phase boundary (MPB). The key to the present success is to quantitatively understand the shift of the MPB under a film stress. The present fabrication has been theoretically justified by superimposing the computed temperature-dependent film stress on the theoretical temperature-stress (T-S) phase diagram and by delineating a probable phase-transition path upon cooling the film from the processing temperature.

S. Hoon Oh and Hyun M. Jang

2001-03-12T23:59:59.000Z

495

Blue photoluminescence in ZnGa{sub 2}O{sub 4} thin-film phosphors  

SciTech Connect

The growth and properties of luminescent ZnGa{sub 2}O{sub 4} thin films using pulsed laser ablation has been investigated. As-deposited films on glass and (100) MgO substrates exhibit blue-white photoluminescence with a broad emission band under ultraviolet excitation. In situ epitaxial films obtained on single crystal (100) MgO substrates possess enhanced luminescent intensity as compared to polycrystalline films on glass substrates. The enhanced luminescence in epitaxial films presumably reflects lower defect densities due to growth on low energy surfaces.

Lee, Yong Eui; Norton, David P.; Park, Chan; Rouleau, Christopher M.

2001-02-01T23:59:59.000Z

496

41.4: Discontinuous Alignment Thin-Film Formation by Self-Organized Dewetting  

E-Print Network (OSTI)

41.4: Discontinuous Alignment Thin-Film Formation by Self-Organized Dewetting Chung-Yung Lee, Man alignment layer [4]. In this paper, we study the formation of a discontinuous alignment film by a dewetting be produced. The alignments produced are robust. Moreover, the processing window is also maximized. 2

497

Analysis of a compressed thin film bonded to a compliant substrate: the energy scaling law  

E-Print Network (OSTI)

of Mathematical Sciences, New York University, kohn@cims.nyu.edu Department of Mathematics, UniversityAnalysis of a compressed thin film bonded to a compliant substrate: the energy scaling law Robert V energy, i.e. the membrane and bending energy of the film plus the elastic energy of the substrate

498

Layer-by-Layer Assembly of Clay-filled Polymer Nanocomposite Thin Films  

E-Print Network (OSTI)

A variety of functional thin films can be produced using the layer-by-layer assembly technique. In this work, assemblies of anionic clay and cationic polymer were studied with regard to film growth and gas barrier properties. A simple, yet flexible...

Jang, Woo-Sik

2010-01-14T23:59:59.000Z

499

Daylighting control performance of a thin-film ceramic electrochromic window: field study results  

E-Print Network (OSTI)

1 Daylighting control performance of a thin-film ceramic electrochromic window: field study results-film electrochromic (EC) windows were initiated at the new full-scale Window Systems testbed facility at the Lawrence of this emerging technology. Keywords: Building energy-efficiency; Electrochromic windows; Daylighting; Control

500

DISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

-scale problems such as energy demand, pollution, and environment safety. The cost ($/kWh) is the primaryDISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS AND MODULES WITH 2-D-FILM SOLAR CELLS AND MODULES WITH 2-D SIMULATIONS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS

Sites, James R.