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Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
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1

A direct thin-film path towards low-cost large-area III-V ...  

A direct thin-film path towards low-cost large-area III-V ... depending on the surface energy constraints of the nucleation ... scaling all times in ...

2

Direct Thin Film Path to Low Cost, Large Area III-V Photovoltaics  

A team of Berkeley Lab researchers has invented the first vapor-liquid-solid (VLS) growth technology yielding III-V photovoltaics. The photovoltaics ...

3

SunShot Initiative: Multijunction III-V Photovoltaics Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Multijunction III-V Photovoltaics Research on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions...

4

CARS of Thin Films  

Science Conference Proceedings (OSTI)

... as a thin film diagnostic. Surface enhanced Raman scattering, SERS, has been used to probe the interfacial region of thin polymer films on metal ...

2012-10-02T23:59:59.000Z

5

Solar Control Thin Films Laboratory  

NLE Websites -- All DOE Office Websites (Extended Search)

Sputtering equipment Solar Control Thin Films Laboratory The Solar Control Thin Films lab develops novel thin film coatings, deposition technologies, and device systems for...

6

Thin Films at Interfaces  

Science Conference Proceedings (OSTI)

... internal structure of these films was probed ... provided important information on film composition and ... The PEO polymers form thin adsorbed layers ...

7

ThinFilms  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Films Thin Films Manufacturing Technologies The Thin Film laboratory provides a variety of vapor deposition processes and facilities for cooperative research and development. Available capabilities include electron beam evaporation, sputter deposition, reactive deposi- tion processes, atomic layer deposition (ALD) and specialized techniques such as focused ion beam induced chemical vapor deposition. Equipment can be reconfigured for prototyping, or it can be dedicated to long-term research, development and manufacturing. Most sputter and evaporative deposition systems are capable of depositing multiple materials. Deposition capabilities and expertise * Deposition of a large variety of thin film mate- rials * Multiple sputter deposition systems - Capable of depositing four materials in a

8

Superhydrophobic Thin Film Coatings  

Exploiting its expertise with thin films and superhydrophobic materials, ORNL has developed a simple, inexpensive way to apply and reliably bond ...

9

Thin film hydrogen sensor  

DOE Patents (OSTI)

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

Cheng, Yang-Tse (Rochester Hills, MI); Poli, Andrea A. (Livonia, MI); Meltser, Mark Alexander (Pittsford, NY)

1999-01-01T23:59:59.000Z

10

Thin film tritium dosimetry  

DOE Patents (OSTI)

The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

Moran, Paul R. (Madison, WI)

1976-01-01T23:59:59.000Z

11

Direct Thin Film Path to Low Cost, Large Area III-V ...  

Energy Analysis; Energy Storage; Geothermal; Hydrogen and Fuel Cell; Hydropower, Wave and Tidal; Industrial Technologies; Solar Photovoltaic; ... ...

12

Thin film photovoltaic device  

DOE Patents (OSTI)

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

Catalano, A.W.; Bhushan, M.

1982-08-03T23:59:59.000Z

13

Thin film photovoltaic device  

DOE Patents (OSTI)

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

Catalano, Anthony W. (Wilmington, DE); Bhushan, Manjul (Wilmington, DE)

1982-01-01T23:59:59.000Z

14

Thin-film optical initiator  

DOE Patents (OSTI)

A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

Erickson, Kenneth L. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

15

Thin Film Nanocomposites for Thermoelectric Applications  

Science Conference Proceedings (OSTI)

Presentation Title, Thin Film Nanocomposites for Thermoelectric Applications ... Abstract Scope, Thin film nanocomposites comprised of refractory metals and ...

16

NMR characterization of thin films  

SciTech Connect

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

Gerald, II, Rex E. (Brookfield, IL); Klingler, Robert J. (Glenview, IL); Rathke, Jerome W. (Homer Glen, IL); Diaz, Rocio (Chicago, IL); Vukovic, Lela (Westchester, IL)

2008-11-25T23:59:59.000Z

17

Thin film photovoltaic cell  

DOE Patents (OSTI)

A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

Meakin, John D. (Newark, DE); Bragagnolo, Julio (Newark, DE)

1982-01-01T23:59:59.000Z

18

Thin film superconductor magnetic bearings  

DOE Patents (OSTI)

A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

Weinberger, Bernard R. (Avon, CT)

1995-12-26T23:59:59.000Z

19

Thin Films and Interfaces Committee  

Science Conference Proceedings (OSTI)

The Thin Films and Interfaces Committee is part of the Electronic, Magnetic, and Photonic Materials Division;. Our Mission: Promotes knowledge of the science ...

20

Vertically Aligned Nanocomposite Thin Films  

E-Print Network (OSTI)

Vertically aligned nanocomposite (VAN) thin films have recently stimulated significant research interest to achieve better material functionality or multifunctionalities. In VAN thin films, both phases grow epitaxially in parallel on given substrates and form a unique nano-checkerboard structure. Multiple strains, including the vertical strain which along the vertical interface and the substrate induced strain which along the film and substrate interface, exist in VAN thin films. The competition of these strains gives a promise to tune the material lattice structure and future more the nanocomposite film physical properties. Those two phases in the VAN thin films are selected based on their growth kinetics, thermodynamic stability and epitaxial growth ability on given substrates. In the present work, we investigated unique epitaxial two-phase VAN (BiFeO3)x:(Sm2O3)1-x and (La0.7Sr0.3MnO3)x:(Mn3O4)1-x thin film systems by pulsed laser deposition. These VAN thin films exhibit a highly ordered vertical columnar structure with good epitaxial quality. The strain of the two phases can be tuned by deposition parameters, e.g. deposition frequency and film composition. Their strain tunability is found to be related directly to the systematic variation of the column widths and domain structures. Their physical properties, such as dielectric loss and ferromagnetisms can be tuned systematically by this variation. The growth morphology, microstructure and material functionalities of VAN thin films can be varied by modifying the phase ratio, substrate orientation or deposition conditions. Systematic study has been done on growing (SrTiO3)0.5:(MgO)0.5 VAN thin films on SrTiO3 and MgO substrates, respectively. The variation of column width demonstrates the substrate induced strain plays another important role in the VAN thin film growth. The VAN thin films also hold promise in achieving porous thin films with ordered nanopores by thermal treatment. We selected (BiFeO3)0.5:(Sm2O3)0.5 VAN thin films as a template and get uniformly distributed bi-layered nanopores. Controllable porosity can be achieved by adjusting the microstructure of VAN (BiFeO3):(Sm2O3) thin films and the annealing parameters. In situ heating experiments within a transmission electron microscope column provide direct observations into the phases transformation, evaporation and structure reconstruction during the annealing. Systematic study in this dissertation demonstrate that the vertically aligned nanocomposite microstructure is a brand new architecture in thin films and an exciting approach that promises tunable material functionalities as well as novel nanostructures.

Bi, Zhenxing

2011-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Thin film hydrogen sensor  

DOE Green Energy (OSTI)

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

Lauf, Robert J. (Oak Ridge, TN); Hoffheins, Barbara S. (Knoxville, TN); Fleming, Pamela H. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

22

Thin film ion conducting coating  

DOE Patents (OSTI)

Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

Goldner, Ronald B. (Lexington, MA); Haas, Terry (Sudbury, MA); Wong, Kwok-Keung (Watertown, MA); Seward, George (Arlington, MA)

1989-01-01T23:59:59.000Z

23

Thin films: Past, present, future  

DOE Green Energy (OSTI)

This report describes the characteristics of the thin film photovoltaic modules necessary for an acceptable rate of return for rural areas and underdeveloped countries. The topics of the paper include a development of goals of cost and performance for an acceptable PV system, a review of current technologies for meeting these goals, issues and opportunities in thin film technologies.

Zweibel, K.

1995-04-01T23:59:59.000Z

24

NIST Hydrogen Storage in Thin Films  

Science Conference Proceedings (OSTI)

Hydrogen Storage Optimization in Thin Film Combinatorial Alloys. ... Magnesium Thin Films," International Journal of Hydrogen Energy, doi:10.1016/j ...

2013-04-01T23:59:59.000Z

25

Thin Film and Nanostructure Processing Group Homepage  

Science Conference Proceedings (OSTI)

... The Thin Film and Nanostructure Processing Group is one of seven ... Deposition of thin films Electrodeposition of metals and alloys Evaporation of ...

2012-10-15T23:59:59.000Z

26

Metals Thin-Films Information at NIST  

Science Conference Proceedings (OSTI)

NIST Home > Metals Thin-Films Information at NIST. Metals Thin-Films Information at NIST. (the links below are a compilation ...

2010-05-24T23:59:59.000Z

27

Optical Characterization of Advanced Thin Films  

Science Conference Proceedings (OSTI)

... Recently, thin films of spun-cast poly(2,5-bis(3-alkylthiophen ... been demonstrated to exhibit exceptional hole mobilities in thin film transistors (TFTs ...

2012-10-02T23:59:59.000Z

28

Thin Film Solar Technologies | Open Energy Information  

Open Energy Info (EERE)

Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon Thin Film Solar Technologies Jump to: navigation, search Name Thin Film Solar Technologies...

29

Interfaces in Nanostructured Functional Oxide Thin Films  

Science Conference Proceedings (OSTI)

The thin film systems include high temperature superconductors (HTS), thin film solid oxide fuel cells (SOFC), and other functional oxide systems. Detailed ...

30

CFN | Thin Films Group  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Synthesis and Characterization Facility Materials Synthesis and Characterization Facility Thin-Film Processing Facility Online Manager (FOM) website FOM manual ESR for lab 1L32 (High-Resolution SEM and x-ray microanalysis) CFN Operations Safety Awareness (COSA) form for 1L32 (ESR #1) Technical article on LABE detector (Analytical SEM) Request form for off-hours access (.doc, First time only, renewals done via email) Lab Tool capabilities Primary contact Training schedule Backup contact Booking calendar Booking rules SOP 1L32 Analytical SEM Camino Thurs 10-12 PM Stein FOM yes yes Hitachi S-4800 SEM Stein Tues 1-3 PM Black FOM no yes booking calendar: yes = need to reserve tool time in calendar before using tool booking rules: yes = specific rules exist for reserving tool time SOP = standard operating procedure (basic instructions)

31

Thin Film and nanostructure Processing Staff  

Science Conference Proceedings (OSTI)

Thin Film Nanostructure Staff Directory. John Bonevich, Group Leader. Shari Beauchamp, Office Assistant. STAFF & NRC POSTDOCS. ...

2013-06-11T23:59:59.000Z

32

Applications of Passive Thin Films  

DOE Green Energy (OSTI)

The physical properties of thin films affect the performance and durability of nearly every solar energy conversion device. Familiar examples of thin films for solar applications are optical materials and protective coatings. Optimized optical properties are key to cost-effective photothermal conversion where individual components must have high absorptance, reflectance, or transmittance. The protection of sensitive substrates from corrosion and/or erosion is essential to ensure adequate component and system lifetime. Such substrates range from photovoltaic materials operating near room temperature to turbine blade structural alloys in hostile environments at very high temperatures (>1,000 degrees C). Although much has been written on particular categories of thin-film materials for solar energy (for example, absorbers for receiver surfaces), to date no one has provided an overview of the spectrum of applications for passive thin films in solar energy. This work is such an overview and also reviews the material state of the art as described in the current literature. Active thin film devices such as photovoltaics and thermoeleetrics are not discussed.

Call, P. J.

1979-05-01T23:59:59.000Z

33

Thin-film Lithium Batteries  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin-Film Battery with Lithium Anode Courtesy of Oak Ridge National Laboratory, Materials Science and Technology Division Thin-Film Lithium Batteries Resources with Additional Information The Department of Energy's 'Oak Ridge National Laboratory (ORNL) has developed high-performance thin-film lithium batteries for a variety of technological applications. These batteries have high energy densities, can be recharged thousands of times, and are only 10 microns thick. They can be made in essentially any size and shape. Recently, Teledyne licensed this technology from ORNL to make batteries for medical devices including electrocardiographs. In addition, new "textured" cathodes have been developed which have greatly increased the peak current capability of the batteries. This greatly expands the potential medical uses of the batteries, including transdermal applications for heart regulation.'

34

Surface Sensitive Scattering from Thin Films  

Science Conference Proceedings (OSTI)

... Thin films of few tenths of angstroms are becoming the staple of the electronic ... a powerful tool for the basic understanding of the film microstructure. ...

35

Thin-film forces in pseudoemulsion films  

SciTech Connect

Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

Bergeron, V.; Radke, C.J. [California Univ., Berkeley, CA (United States). Dept. of Chemical Engineering]|[Lawrence Berkeley Lab., CA (United States)

1991-06-01T23:59:59.000Z

36

Semiconductor-nanocrystal/conjugated polymer thin films  

DOE Patents (OSTI)

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Alivisatos, A. Paul (Oakland, CA); Dittmer, Janke J. (Munich, DE); Huynh, Wendy U. (Munich, DE); Milliron, Delia (Berkeley, CA)

2010-08-17T23:59:59.000Z

37

Thin film-coated polymer webs  

DOE Patents (OSTI)

The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

Wenz, Robert P. (Cottage Grove, MN); Weber, Michael F. (Shoreview, MN); Arudi, Ravindra L. (Woodbury, MN)

1992-02-04T23:59:59.000Z

38

Thin Film Deposition Method for Sensor Manufacturing  

Scientists at Los Alamos National Laboratory (LANL) have developed an innovative method for gas sensor manufacturing using a thin film deposition. The thin film requires very little material and can be applied in high throughput applications.

39

Thin Film Photovoltaics - Programmaster.org  

Science Conference Proceedings (OSTI)

Thin Film Structures for Energy Efficient Systems: Thin Film Photovoltaics ... Full- inorganic Heterojunction Ink-printed Solar Cells: Seigo Ito1; 1University of Hyogo ... electrochemical impedance spectroscopy (EIS) measurements were used for ...

40

Magnetoelectric Multiferroic Thin Films and Multilayers  

Science Conference Proceedings (OSTI)

Scope, The symposium will cover thin films, single crystals, normal/relaxor ferroelectrics, piezoelectric ceramics, magnetoelectric composites, multiferroic ...

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Magnetic behaviour of europium epitaxial thin films  

Science Conference Proceedings (OSTI)

... Magnetic behaviour of europium epitaxial thin films. Philippe Mangin, University of Nancy and NCNR. We present the magnetic ...

42

MST: Organizations: Thin Film, Vacuum, and Packaging  

NLE Websites -- All DOE Office Websites (Extended Search)

Processes & Services Electronic Fabrication Manufacturing Process Science & Technology Thin Film, Vacuum, & Packaging Organic Materials Ceramic & Glass Meso Manufacturing &...

43

New III-V cell design approaches for very high efficiency  

DOE Green Energy (OSTI)

This report describes to examine new solar cell desip approaches for achieving very high conversion efficiencies. The program consists of two elements. The first centers on exploring new thin-film approaches specifically designed for M-III semiconductors. Substantial efficiency gains may be possible by employing light trapping techniques to confine the incident photons, as well as the photons emitted by radiative recombination. The thin-film approach is a promising route for achieving substantial performance improvements in the already high-efficiency, single-junction, III-V cell. The second element of the research involves exploring desip approaches for achieving high conversion efficiencies without requiring extremely high-quality material. This work has applications to multiple-junction cells, for which the selection of a component cell often involves a compromise between optimum band pp and optimum material quality. It could also be a benefit manufacturing environment by making the cell's efficiency less dependent on materialquality.

Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; Patkar, M.P.; Young, M.P. (Purdue Univ., Lafayette, IN (United States))

1993-04-01T23:59:59.000Z

44

Thin film buried anode battery  

DOE Patents (OSTI)

A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

Lee, Se-Hee (Lakewood, CO); Tracy, C. Edwin (Golden, CO); Liu, Ping (Denver, CO)

2009-12-15T23:59:59.000Z

45

Method of producing amorphous thin films  

DOE Patents (OSTI)

Disclosed is a method of producing thin films by sintering which comprises: a. coating a substrate with a thin film of an inorganic glass forming parulate material possessing the capability of being sintered, and b. irridiating said thin film of said particulate material with a laser beam of sufficient power to cause sintering of said material below the temperature of liquidus thereof. Also disclosed is the article produced by the method claimed.

Brusasco, Raymond M. (Livermore, CA)

1992-01-01T23:59:59.000Z

46

Characterization of Micro-, Nano-, and Thin Films  

Science Conference Proceedings (OSTI)

Feb 18, 2010... CdS:In Thin Films Prepared by the Spray-Pyrolysis Technique: Shadia Ikhmayies1; Riyad Ahmad-Bitar1; 1University of Jordan

47

Enhanced Thin Film Organic Photovoltaic Devices  

A novel structure design for thin film organic photovoltaic (OPV) devices provides a system for increasing the optical absorption in the active layer. ...

48

Method of producing amorphous thin films  

DOE Patents (OSTI)

This invention dicloses a method for sintering particulate material (such as silica) with a laser beam to produce amorphous optical thin films on substrates.

Brusasco, R.M.

1991-12-31T23:59:59.000Z

49

Infrared Analysis of Advanced Thin Film Materials  

Science Conference Proceedings (OSTI)

The goals of timely and cost effective integration of these new materials into ... most widely accepted method for production monitoring of transparent thin films.

50

Polycrystalline Thin Film Solar Cell Technologies: Preprint  

DOE Green Energy (OSTI)

Rapid progress is being made by CdTe and CIGS-based thin-film PV technologies in entering commercial markets.

Ullal, H. S.

2008-12-01T23:59:59.000Z

51

Mechanical Properties of Thin Film Metallic Glass  

Science Conference Proceedings (OSTI)

Because of these and other properties, thin film metallic-glasses (TFMGs) are a promising structural material for fabricating the next generation of micro- and ...

52

Textured Ultrafine Grained Al Thin Films  

Science Conference Proceedings (OSTI)

Symposium, Fatigue and Fracture of Thin Films and Nanomaterials. Presentation Title, In-Situ ACOM-TEM Nanomechanical Testing of Textured Ultrafine ...

53

Thin Film Structures for Energy Efficient Systems  

Science Conference Proceedings (OSTI)

Thin film based energy generation and storage devices - Small scale ... Dye- sensitized Solar Cells with Anodized Aluminum Alloy-based Counter-electrodes.

54

Thin-Film Photovoltaic Industry  

Science Conference Proceedings (OSTI)

This report presents an overview of the thin-film (TF) photovoltaic (PV) industry as of the third quarter of 2012, a time in the midst of very rapid changes.  The TFPV industry has seen significantly greater investment in the past 5 to 10 years than in any previous time and up until recently it seemed that this investment was on track to make TFPV a much larger player in the overall PV market.  However, market dynamics have conspired to dim TFPV’s near-term prospects and ...

2012-11-30T23:59:59.000Z

55

Thin film solar energy collector  

DOE Patents (OSTI)

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

1983-11-22T23:59:59.000Z

56

Thin-film optical initiator - Energy Innovation Portal  

A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film.

57

Thin films of mixed metal compounds  

DOE Patents (OSTI)

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

1985-01-01T23:59:59.000Z

58

Electrostatic thin film chemical and biological sensor  

DOE Patents (OSTI)

A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

Prelas, Mark A. (Columbia, MO); Ghosh, Tushar K. (Columbia, MO); Tompson, Jr., Robert V. (Columbia, MO); Viswanath, Dabir (Columbia, MO); Loyalka, Sudarshan K. (Columbia, MO)

2010-01-19T23:59:59.000Z

59

Institute of Photo Electronic Thin Film Devices and Technology...  

Open Energy Info (EERE)

Place Tianjin Municipality, China Zip 300071 Sector Solar Product A thin-film solar cell research institute in China. References Institute of Photo-Electronic Thin Film Devices...

60

NREL: Photovoltaics Research - Polycrystalline Thin-Film Materials...  

NLE Websites -- All DOE Office Websites (Extended Search)

in the area of polycrystalline thin-film materials and devices. Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Daylighting control performance of a thin-film ceramic electrochromic...  

NLE Websites -- All DOE Office Websites (Extended Search)

Daylighting control performance of a thin-film ceramic electrochromic window: Field study results Title Daylighting control performance of a thin-film ceramic electrochromic...

62

Breakthroughs in Thin-Film Magnetic Devices Earn NIST ...  

Science Conference Proceedings (OSTI)

... thin films to control magnetism as a foundation for developing better sensors and memory devices. Computer hard drives that use magnetic thin-film ...

2012-12-13T23:59:59.000Z

63

Amorphous and nanocrystalline Mg2Si thin-film electrodes  

NLE Websites -- All DOE Office Websites (Extended Search)

Contact Us Department Contacts Media Contacts Amorphous and nanocrystalline Mg2Si thin-film electrodes Title Amorphous and nanocrystalline Mg2Si thin-film electrodes...

64

Thin-Film/Low-K Dielectric Constant Measurement  

Science Conference Proceedings (OSTI)

... to pursue a very different approach to dielectric thin-film characterization at ... at NIST; DOW will simply deposit and pattern the thin films on pretested ...

2010-10-05T23:59:59.000Z

65

Method of producing thin cellulose nitrate film  

DOE Patents (OSTI)

An improved method for forming a thin nitrocellulose film of reproducible thickness is described. The film is a cellulose nitrate film, 10 to 20 microns in thickness, cast from a solution of cellulose nitrate in tetrahydrofuran, said solution containing from 7 to 15 percent, by weight, of dioctyl phthalate, said cellulose nitrate having a nitrogen content of from 10 to 13 percent.

Lupica, S.B.

1975-12-23T23:59:59.000Z

66

New III-V cell design approaches for very high efficiency  

DOE Green Energy (OSTI)

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; O'Bradovich, G.J.; Young, M.P. (Purdue Univ., Lafayette, IN (United States))

1993-01-01T23:59:59.000Z

67

Thin-film rechargeable lithium batteries  

SciTech Connect

Small thin-film rechargeable cells have been fabricated with a lithium phosphorus oxyniuide electrolyte, Li metal anode, and Li{sub 1-x}Mn{sub 2}O{sub 4} as the cathode film. The cathode films were fabricated by several different techniques resulting in both crystalline and amorphous films. These were compared by observing the cell discharge behavior. Estimates have been made for the scale-up of such a thin-film battery to meet the specifications for the electric vehicle application. The specific energy, energy density, and cycle life are expected to meet the USABC mid-term criteria. However, the areas of the thin-films needed to fabricate such a cell are very large. The required areas could be greatly reduced by operating the battery at temperatures near 100{degrees}C or by enhancing the lithium ion transport rate in the cathode material.

Dudney, N.J.; Bates, J.B.; Lubben, D.

1994-11-01T23:59:59.000Z

68

Aging phenomena in polystyrene thin films  

E-Print Network (OSTI)

The aging behavior is investigated for thin films of atactic polystyrene through measurements of complex electric capacitance. During isothermal aging process the real part of the electric capacitance increases with aging time, while the imaginary part decreases with aging time. This result suggests that the aging time dependence of the real and imaginary parts are mainly associated with change in thickness and dielectric permittivity, respectively. In thin films, the thickness depends on thermal history of aging even above the glass transition. Memory and `rejuvenation' effects are also observed in the thin films.

Koji Fukao; Hiroki Koizumi

2008-01-05T23:59:59.000Z

69

Preparation of III-V semiconductor nanocrystals  

DOE Patents (OSTI)

Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

Alivisatos, A. Paul (Berkeley, CA); Olshavsky, Michael A. (Brunswick, OH)

1996-01-01T23:59:59.000Z

70

SunShot Initiative: Thin Film Photovoltaics Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Film Photovoltaics Research Thin Film Photovoltaics Research to someone by E-mail Share SunShot Initiative: Thin Film Photovoltaics Research on Facebook Tweet about SunShot Initiative: Thin Film Photovoltaics Research on Twitter Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Google Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Delicious Rank SunShot Initiative: Thin Film Photovoltaics Research on Digg Find More places to share SunShot Initiative: Thin Film Photovoltaics Research on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Thin Film Photovoltaics Research The U.S. Department of Energy (DOE) supports research and development of

71

Innovative Thin Films LLC | Open Energy Information  

Open Energy Info (EERE)

Thin Films LLC Thin Films LLC Jump to: navigation, search Name Innovative Thin Films LLC Place Toledo, Ohio Zip 43607 Product Provider of altnernative energy thin film deposition technology. Coordinates 46.440613°, -122.847838° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":46.440613,"lon":-122.847838,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

72

Solid State Thin Film Lithium Microbatteries  

E-Print Network (OSTI)

Solid state thin film lithium microbatteries fabricated by pulsed-laser deposition (PLD) are suggested. During deposition the following process parameters must be considered, which are laser energy and fluence, laser pulse ...

Shi, Z.

73

Polycrystalline Thin Film Used in Photovoltaics  

Energy.gov (U.S. Department of Energy (DOE))

Polycrystalline thin-film cells are made of many tiny crystalline grains of semiconductor materials. The materials used in these cells have properties that are different from those of silicon.

74

Superhydrophobic Thin Film Symposium | ornl.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

Connect with ORNL | For Industry | Partnerships | Events and Conferences Superhydrophobic Thin Film Symposium Sep 05 2012 12:00 AM - 05:00 PM Hosted by Oak Ridge Laboratory's...

75

Polycrystalline Thin-Film Multijunction Solar Cells  

DOE Green Energy (OSTI)

We present a digest of our research on the thin-film material components that comprise the top and bottom cells of three different material systems and the tandem devices constructed from them.

Noufi, R.; Wu, X.; Abu-Shama, J.; Ramanathan, K; Dhere, R.; Zhou, J.; Coutts, T.; Contreras, M.; Gessert, T.; Ward, J. S.

2005-11-01T23:59:59.000Z

76

Thin films for geothermal sensing: Final report  

DOE Green Energy (OSTI)

The report discusses progress in three components of the geothermal measurement problem: (1) developing appropriate chemically sensitive thin films; (2) discovering suitably rugged and effective encapsulation schemes; and (3) conducting high temperature, in-situ electrochemical measurements. (ACR)

Not Available

1987-09-01T23:59:59.000Z

77

Thin-film Rechargeable Lithium Batteries  

DOE R&D Accomplishments (OSTI)

Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

Dudney, N. J.; Bates, J. B.; Lubben, D.

1995-06-00T23:59:59.000Z

78

Thin-film rechargeable lithium batteries  

SciTech Connect

Thin-film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin-film battery.

Dudney, N.J.; Bates, J.B.; Lubben, D. [Oak Ridge National Lab., TN (United States). Solid State Div.

1995-06-01T23:59:59.000Z

79

Thin film absorber for a solar collector  

SciTech Connect

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, William G. (Cutchogue, NY)

1985-01-01T23:59:59.000Z

80

Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films  

DOE Patents (OSTI)

A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

Brinker, Charles Jeffrey (Albuquerque, NM); Prakash, Sai Sivasankaran (Minneapolis, MN)

1999-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


81

Method for making thin polypropylene film  

DOE Patents (OSTI)

An economical method is provided for making uniform thickness polypropylene film as thin as 100 Angstroms. A solution of polypropylene dissolved in xylene is formed by mixing granular polypropylene and xylene together in a flask at an elevated temperature. A substrate, such as a glass plate or microscope slide is immersed in the solution. When the glass plate is withdrawn from the solution at a uniform rate, a thin polypropylene film forms on a flat surface area of the glass plate as the result of xylene evaporation. The actual thickness of the polypropylene film is functional of the polypropylene in xylene solution concentration, and the particular withdrawal rate of the glass plate from the solution. After formation, the thin polypropylene film is floated from the glass plate onto the surface of water, from which it is picked up with a wire hoop.

Behymer, R.D.; Scholten, J.A.

1985-11-21T23:59:59.000Z

82

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES  

E-Print Network (OSTI)

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES S. Suresh1 , T.-G. Nieh2 and B.W. Choi2: Mechanical properties; Nano-indentation; Thin films; Copper; Dislocations Introduction Indentation methods films on substrates (e.g., [2,3]) using instrumented indentation. Nano-indentation studies of thin films

Suresh, Subra

83

Photovoltaic Polycrystalline Thin-Film Cell Basics | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Polycrystalline Thin-Film Cell Basics Polycrystalline Thin-Film Cell Basics Photovoltaic Polycrystalline Thin-Film Cell Basics August 20, 2013 - 2:36pm Addthis Polycrystalline thin-film cells are made of many tiny crystalline grains of semiconductor materials. The materials used in these cells have properties that are different from those of silicon. Thin-film cells have many advantages over their thick-film counterparts. For example, they use much less material. The cell's active area is usually only 1 to 10 micrometers thick, whereas thick films typically are 100 to 300 micrometers thick. Also, thin-film cells can usually be manufactured in a large-area process, which can be an automated, continuous production process. Finally, they can be deposited on flexible substrate materials. The term thin film comes from the method used to deposit the film, not from

84

Superhydrophobic Thin Film Symposium | ornl.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

Superhydrophobic Thin Film Symposium Superhydrophobic Thin Film Symposium Sep 05 2012 12:00 AM - 05:00 PM Hosted by Oak Ridge Laboratory's Partnerships Directorate and focusing on the recent LDRD Launch project work completed by Dr. Tolga Aytug and Dr. John T. Simpson (ORNL research PI's). Oak Ridge, TN Oak Ridge National Laboratory CONTACT : Email: Cassie Lopez Phone:(865) 576-9294 Add to Calendar SHARE Hosted by Oak Ridge Laboratory's Partnerships Directorate and focusing on the recent LDRD Launch project work completed by Dr. Tolga Aytug and Dr. John T. Simpson (ORNL research PI's). Purpose To share the ORNL Superhydrophonbic Thin Film technology to prospective commercial partners. Date and Time The conference will be held on the morning of Wednesday September 5th at Oak Ridge National Laboratory (ORNL) by Partnerships and Technology

85

Method for synthesizing thin film electrodes  

SciTech Connect

A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

Boyle, Timothy J. (Albuquerque, NM)

2007-03-13T23:59:59.000Z

86

Mesoscale morphologies in polymer thin films.  

Science Conference Proceedings (OSTI)

In the midst of an exciting era of polymer nanoscience, where the development of materials and understanding of properties at the nanoscale remain a major R&D endeavor, there are several exciting phenomena that have been reported at the mesoscale (approximately an order of magnitude larger than the nanoscale). In this review article, we focus on mesoscale morphologies in polymer thin films from the viewpoint of origination of structure formation, structure development and the interaction forces that govern these morphologies. Mesoscale morphologies, including dendrites, holes, spherulites, fractals and honeycomb structures have been observed in thin films of homopolymer, copolymer, blends and composites. Following a largely phenomenological level of description, we review the kinetic and thermodynamic aspects of mesostructure formation outlining some of the key mechanisms at play. We also discuss various strategies to direct, limit, or inhibit the appearance of mesostructures in polymer thin films as well as an outlook toward potential areas of growth in this field of research.

Ramanathan, M.; Darling, S. B. (Center for Nanoscale Materials)

2011-06-01T23:59:59.000Z

87

Tungsten-doped thin film materials - Energy Innovation Portal  

A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a ...

88

Chemistry Chemical Analysis Thin-Films Information at NIST  

Science Conference Proceedings (OSTI)

... Method Can Affect the Use of Block Copolymer Thin Films (10/18 ... NIST Scientists Address 'Wrinkles' in Transparent Film Development (10/02/2012). ...

2010-09-24T23:59:59.000Z

89

NIST Testing Method Quickly Tells Whether Thin Films Are ...  

Science Conference Proceedings (OSTI)

... and emerging technology areas that rely on thin-film advances for ... For films less than 1 micrometer thick, mechanical-property measurements made ...

2013-01-03T23:59:59.000Z

90

Thermoelectric effect in very thin film Pt/Au thermocouples  

E-Print Network (OSTI)

thin films, the electrical resistivity ratio ? F /? B is BStudies of the electrical resistivity of metallic films [23,calculate the electrical resistivity and the thermoelectric

Salvadori, M.C.; Vaz, A.R.; Teixeira, F.S.; Cattani, M.; Brown, I.G.

2006-01-01T23:59:59.000Z

91

Thin Film Solid Oxide Fuel Cells  

Science Conference Proceedings (OSTI)

A novel solid oxide fuel cell (SOFC) design that can be fabricated entirely using low-temperature, thin-film processing is described. Potential advantages of the cell are reduced materials costs and improved fuel-cell characteristics. The critical design feature is the use of thin (approximately equal to 50 nanometers), catalytically-active oxide layers on a < 10 micrometer thick yttria-stabilized zirconia (YSZ) supported electrolyte to minimize reaction overpotentials and ohmic losses. Doped ceria at th...

1995-03-29T23:59:59.000Z

92

Solution of thin film magnetization problems in type-II superconductivity  

Science Conference Proceedings (OSTI)

Keywords: critical current, numerical solution, superconductivity, thin film, variational inequality

Leonid Prigozhin

1998-07-01T23:59:59.000Z

93

Superconducting thin films on potassium tantalate substrates  

DOE Patents (OSTI)

A superconductive system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

Feenstra, Roeland (Oak Ridge, TN); Boatner, Lynn A. (Oak Ridge, TN)

1992-01-01T23:59:59.000Z

94

Annealed CVD molybdenum thin film surface  

DOE Patents (OSTI)

Molybdenum thin films deposited by pyrolytic decomposition of Mo(CO).sub.6 attain, after anneal in a reducing atmosphere at temperatures greater than 700.degree. C., infrared reflectance values greater than reflectance of supersmooth bulk molybdenum. Black molybdenum films deposited under oxidizing conditions and annealed, when covered with an anti-reflecting coating, approach the ideal solar collector characteristic of visible light absorber and infrared energy reflector.

Carver, Gary E. (Tucson, AZ); Seraphin, Bernhard O. (Tucson, AZ)

1984-01-01T23:59:59.000Z

95

Nanostructured Inorganic Thin Film Enabled Fiber Optic Sensors for ...  

Science Conference Proceedings (OSTI)

... Thin Film Enabled Fiber Optic Sensors for Gas Sensing in Energy and Environmental Systems ... Co-Doped TiO2 Nanoparticles and Thin Films for Enhanced Solar Energy Utilization ... Synthesis of Magnetic Core-TS-1 Zeolite Shell Catalyst.

96

SAW determination of surface area of thin films  

DOE Patents (OSTI)

N.sub.2 adsorption isotherms are measured from thin films on SAW devices. The isotherms may be used to determine the surface area and pore size distribution of thin films.

Frye, Gregory C. (Albuquerque, NM); Martin, Stephen J. (Albuquerque, NM); Ricco, Antonio J. (Albuquerque, NM)

1990-01-01T23:59:59.000Z

97

Using in Situ Thin Film Stress Measurements to Understand ...  

Science Conference Proceedings (OSTI)

Symposium, Nanostructured Materials for Lithium Ion Batteries and for Supercapacitors. Presentation Title, Using in Situ Thin Film Stress Measurements to ...

98

Synthesis and Characterization of Plasma Polymerized Thin Films ...  

Science Conference Proceedings (OSTI)

Presentation Title, Synthesis and Characterization of Plasma Polymerized Thin Films Deposited from Benzene and Hexamethyldisiloxane Using (PECVD) ...

99

Fracture and Delamination in Thin Film Si Electrodes  

Science Conference Proceedings (OSTI)

Symposium, Nanostructured Materials for Lithium Ion Batteries and for Supercapacitors. Presentation Title, Fracture and Delamination in Thin Film Si Electrodes.

100

Magnetic properties of TM/RE bilayer thin films  

Science Conference Proceedings (OSTI)

... Magnetic properties of TM/RE bilayer thin films. I. Zoto University of Alabama. The magnetic recording technology badly ...

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Solar photovoltaic technology: The thin film option  

DOE Green Energy (OSTI)

Photovoltaics (PV) the direct conversion of sunlight to electricity was first discovered by scientists at the Bell Labs in 1954. In the late 1960's and 1970's most of the solar cell technology has been used for space applications to power satellites. The main work horse for the PV technology has been crystalline silicon (Si) solar cells. Over the past 15 years this has led to cost reduction from $35/kWh to about $0.30/kWh at the present time. Demonstrated reliability of 20 years or more has resulted in acceptance by several utilities. However, cost reductions in crystalline Si solar cells have been limited by the cost of wafering of ingots and the attendant loss of material. A number of Si sheet solar cells are also being investigated. In the past decade the emphasis of the research and development effort has been focused on thin film solar cells, which have the potential for generating power at much lower cost of $1-2/Wp. Thin film solar cells that are presently being investigated and are generating global attention are: amorphous silicon (a-Si:H), cadmium telluride (CdTe), and copper indium diselenide (CuInSe/sub 2,/ or CIS). In the past few years, considerable progress has been; made by all three of these thin film solar cells. This paper reviews the current status and future potential of these exiting thin film solar cell technologies.

Ullal, H.S.; Zweibel, K.; Sabisky, E.S.; Surek, T.

1988-01-01T23:59:59.000Z

102

New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1991--31 July 1992  

DOE Green Energy (OSTI)

This report describes to examine new solar cell desip approaches for achieving very high conversion efficiencies. The program consists of two elements. The first centers on exploring new thin-film approaches specifically designed for M-III semiconductors. Substantial efficiency gains may be possible by employing light trapping techniques to confine the incident photons, as well as the photons emitted by radiative recombination. The thin-film approach is a promising route for achieving substantial performance improvements in the already high-efficiency, single-junction, III-V cell. The second element of the research involves exploring desip approaches for achieving high conversion efficiencies without requiring extremely high-quality material. This work has applications to multiple-junction cells, for which the selection of a component cell often involves a compromise between optimum band pp and optimum material quality. It could also be a benefit manufacturing environment by making the cell`s efficiency less dependent on materialquality.

Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; Patkar, M.P.; Young, M.P. [Purdue Univ., Lafayette, IN (United States)

1993-04-01T23:59:59.000Z

103

Polycrystalline thin film materials and devices  

DOE Green Energy (OSTI)

Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. (Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion)

1992-10-01T23:59:59.000Z

104

Development of recrystallization and thin-film solar cell processes. Final report, October 1, 1977-September 30, 1978  

DOE Green Energy (OSTI)

The program had two thrusts: (1) based upon electron-beam thermal treatment of deposited silicon films, to increase crystallite sizes to the range thought to be useful for polycrystalline, thin-film cell fabrication; and (2) to explore the feasibility of applying the directed-energy technologies of ion implantation and pulsed electron beam activation, previously developed for silicon cell fabrication, to junction formation in III-V compounds. The culmination of the recrystallization effort was demonstrating grains broader than the 30-..mu..m film in which they were regrown. This proof of principle was accomplished by means of two-step thermal process that consisted of large-area pulsed electron beam melting followed by small-area heating in a moving DC electron beam. The pulsed beam treatment reduced the three-dimensional disorder of the initial submicrometer crystallite silicon film to one characterized by submicrometercross-section, full-film-thickness, columnar crystallites. The swept beam treatment allowed coalesence of these columnar crystallites, through directional freezing, in the melt path of the beam. It is believed that this demonstration is the first evidence of greater-than-film thickness recrystallization of useful thickness silicon films other than by extended heat treatment at greater than 1350/sup 0/C. The results of the studies on junction formation in III-V materials, while not so dramatic, have shown that low-energy ion implantation is a potentially viable alternative to liquid or vapor phase epitaxy in the fabrication of GaAs solar cells. Further, the technical feasibility of pulsed electron beam activation of ion implanted junctions in GaAs has been demonstrated. Lastly, the concept of forming front-layer windows of GaP and AlGaAs on GaAs by high-dose ion implantation has been shown to be technically feasible.

Solomon, S.J.

1979-05-01T23:59:59.000Z

105

III-V Compound Semiconductor Nanowires for Optoelectronic ...  

Science Conference Proceedings (OSTI)

Design of Pre-Weakening and Evaluation of Structural Safety for Explosive ... Crystallization Temperature of Pd-Cu-Si System Using Integrated Thin Film Samples ... Mechanical Properties of 5083 Aluminium Welds after Manual and Automatic ...

106

Polycrystalline thin films FY 1992 project report  

DOE Green Energy (OSTI)

This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting next-generation'' options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called government/industry partnerships'') that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

Zweibel, K. (ed.)

1993-01-01T23:59:59.000Z

107

Polycrystalline thin films FY 1992 project report  

DOE Green Energy (OSTI)

This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

Zweibel, K. [ed.

1993-01-01T23:59:59.000Z

108

Thin film photovoltaic panel and method  

DOE Patents (OSTI)

A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

Ackerman, Bruce (El Paso, TX); Albright, Scot P. (El Paso, TX); Jordan, John F. (El Paso, TX)

1991-06-11T23:59:59.000Z

109

Structures for dense, crack free thin films  

DOE Patents (OSTI)

The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

Jacobson, Craig P. (Lafayette, CA); Visco, Steven J. (Berkeley, CA); De Jonghe, Lutgard C. (Lafayette, CA)

2011-03-08T23:59:59.000Z

110

Rechargeable thin-film lithium batteries  

SciTech Connect

Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6-{mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin-film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin-film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin-film lithium batteries.

Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, Xiaohua

1993-08-01T23:59:59.000Z

111

Packaging material for thin film lithium batteries  

SciTech Connect

A thin film battery including components which are capable of reacting upon exposure to air and water vapor incorporates a packaging system which provides a barrier against the penetration of air and water vapor. The packaging system includes a protective sheath overlying and coating the battery components and can be comprised of an overlayer including metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-metal-ceramic combination.

Bates, John B. (116 Baltimore Dr., Oak Ridge, TN 37830); Dudney, Nancy J. (11634 S. Monticello Rd., Knoxville, TN 37922); Weatherspoon, Kim A. (223 Wadsworth Pl., Oak Ridge, TN 37830)

1996-01-01T23:59:59.000Z

112

Active superconducting devices formed of thin films  

DOE Patents (OSTI)

Active superconducting devices are formed of thin films of superconductor which include a main conduction channel which has an active weak link region. The weak link region is composed of an array of links of thin film superconductor spaced from one another by voids and selected in size and thickness such that magnetic flux can propagate across the weak link region when it is superconducting. Magnetic flux applied to the weak link region will propagate across the array of links causing localized loss of superconductivity in the links and changing the effective resistance across the links. The magnetic flux can be applied from a control line formed of a superconducting film deposited coplanar with the main conduction channel and weak link region on a substrate. The devices can be formed of any type to superconductor but are particularly well suited to the high temperature superconductors since the devices can be entirely formed from coplanar films with no overlying regions. The devices can be utilized for a variety of electrical components, including switching circuits, amplifiers, oscillators and modulators, and are well suited to microwave frequency applications.

Martens, Jon S. (Madison, WI); Beyer, James B. (Madison, WI); Nordman, James E. (Madison, WI); Hohenwarter, Gert K. G. (Madison, WI)

1991-05-28T23:59:59.000Z

113

Thin film cadmium telluride photovoltaic cells  

DOE Green Energy (OSTI)

This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

Compaan, A.; Bohn, R. (Toledo Univ., OH (United States))

1992-04-01T23:59:59.000Z

114

NREL: Photovoltaics Research - Thin Film Photovoltaic Partnership Project  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed the United States to attain world leadership in this area of solar technology. Three national R&D teams focused on thin-film semiconductor materials: amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS) and its alloys. The Module Reliability Team and Environmental Health and Safety Team were crosscutting. The teams comprised researchers from the solar industry, academia, and NREL who focused their efforts on improving materials, devices, and manufacturing processes-all

115

Fabrication Of Multilayered Thin Films Via Spin-Assembly  

NLE Websites -- All DOE Office Websites (Extended Search)

Fabrication Of Multilayered Thin Films Via Spin-Assembly Fabrication Of Multilayered Thin Films Via Spin-Assembly Fabrication Of Multilayered Thin Films Via Spin-Assembly A process of forming multilayer thin film heterostructures. Available for thumbnail of Feynman Center (505) 665-9090 Email Fabrication Of Multilayered Thin Films Via Spin-Assembly A process of forming multilayer thin film heterostructures is disclosed and includes applying a solution including a first water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species onto a substrate to form a first coating layer on the substrate, drying the first coating layer on the substrate, applying a solution including a second water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species

116

Overview and Challenges of Thin Film Solar Electric Technologies  

DOE Green Energy (OSTI)

In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

Ullal, H. S.

2008-12-01T23:59:59.000Z

117

Fluorination of amorphous thin-film materials with xenon fluoride  

DOE Patents (OSTI)

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

Weil, Raoul B. (Haifa, IL)

1988-01-01T23:59:59.000Z

118

Chemical vapor deposition of organosilicon and sacrificial polymer thin films  

E-Print Network (OSTI)

Chemical vapor deposition (CVD) produced films for a wide array of applications from a variety of organosilicon and organic precursors. The structure and properties of thin films were controlled by varying processing ...

Casserly, Thomas Bryan

2005-01-01T23:59:59.000Z

119

Low Cost Fabrication of Thin-Film Ceramic Membranes for ...  

For Industry; For Researchers; Success Stories; About Us; ... Inexpensive Production of High Density Thin Ceramic Films on Rigid or Porous Substrates, ...

120

Evaluation of Thin-film Interfacial Properties Using Indentation Test  

Science Conference Proceedings (OSTI)

A thin film's reliable question is depend on interfacial characterization, so evaluating interfacial characterization is the most important things in this test. So far ...

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Ferroelectric Thin Film Capacitors to Enable a Miniaturized Smart L ...  

Science Conference Proceedings (OSTI)

The effects ultra-violet (UV)-assisted processing and compositional grading of BST capacitor thin films will be presented and the material property trade-offs for  ...

122

Single-Crystalline Thin Film Used in Photovoltaics  

Energy.gov (U.S. Department of Energy (DOE))

Single-crystalline thin films are made from gallium arsenide (GaAs), a compound semiconductor that is a mixture of gallium and arsenic.

123

Thin film techniques for solid oxide fuel cells  

Thin film techniques for solid oxide fuel cells V.E.J. van Dieten and J. Schoonman Laboratory ... ticles stay in the hot temperature region can be ...

124

Heteroepitaxial Si Thin Films Deposited on Flexible Copper ...  

Science Conference Proceedings (OSTI)

Presentation Title, Heteroepitaxial Si Thin Films Deposited on Flexible Copper Substrates for Solar Photovoltaics. Author(s), Daniela Florentina Bogorin, Lee ...

125

Electron Beam Evaporator Systems for Thin Film Deposition  

Science Conference Proceedings (OSTI)

The Thin Film and Nanostructure Processing Group has two high-vacuum, electron beam evaporator systems for fabrication of single and multilayer ...

2012-10-23T23:59:59.000Z

126

Layer-by-Layer Assembled Thin Films for Battery Electrolytes  

Science Conference Proceedings (OSTI)

Presentation Title, Layer-by-Layer Assembled Thin Films for Battery Electrolytes ... Abstract Scope, Exponential layer-by-layer (eLBL) assembled battery ...

127

Thin-Film Ferroelectric Materials for Decoupling and Tunable ...  

Science Conference Proceedings (OSTI)

Symposium, ACerS Richard M. Fulrath Award Symposium. Presentation Title, Thin-Film Ferroelectric Materials for Decoupling and Tunable Capacitors. Author( s) ...

128

Development of Polyimide/SMA Thin-Film Actuator  

Science Conference Proceedings (OSTI)

Symposium, Symposium I: Biomaterials, Smart Materials and Structures. Presentation Title, Development of Polyimide/SMA Thin-Film Actuator. Author(s), Akira ...

129

Integrated Technology of Decoupling BST Thin Film Capacitors  

Science Conference Proceedings (OSTI)

Jun 16, 2007 ... The integration technology of decoupling capacitors, which contain multi-layered Cu wiring and Barium Strontium Titanate (BST) thin film ...

130

How Thin Film Processing Can Contribute to Understanding the ...  

Science Conference Proceedings (OSTI)

Presentation Title, How Thin Film Processing Can Contribute to Understanding the Materials Science of the MAX Phases. Author(s), Per Eklund, Ulf Jansson, ...

131

Fabrication of Solid Oxide Fuel Cells via Thin Film Techniques  

Science Conference Proceedings (OSTI)

We decided to use thin film techniques to solve this problem. Among various methods of lowering the operation temperature for SOFCs, adopting bi-layer ...

132

Lessons Learned in Sputtering TiNi Thin Film  

Science Conference Proceedings (OSTI)

Experimental results have been published in journals and conference proceedings, but as yet TiNi thin film is not commercially available. The author and ...

133

AMORPHOUS THIN FILMS CONSISTING OF TERNARY MgZnCa ...  

Science Conference Proceedings (OSTI)

Jul 20, 2012 ... AMORPHOUS THIN FILMS CONSISTING OF TERNARY MgZnCa-ALLOYS by K. Schlüter, C. Zamponi, U. Schürmann, N. Hort, L. Kienle, K.U. ...

134

Interface Adhesion and Coating Integrity of the Thin Film Au ...  

Science Conference Proceedings (OSTI)

Current scientific emphasis is on process development and optimization of thin film Au-interconnect metallization for the Bi2Te3-based TE module used for the ...

135

Development of Thin-Film Materials Technology for Energy Applications...  

NLE Websites -- All DOE Office Websites (Extended Search)

Development of Thin-Film Materials Technology for Energy Applications: High Temperature Superconductors, etc. Speaker(s): Ronald Reade Date: January 15, 2002 - 12:00pm Location:...

136

Bi-based Piezoelectric Thin Films via Chemical Solution Deposition  

Science Conference Proceedings (OSTI)

BNT-BKT-BMgT thin films showed very promising piezoelectric response with ... Chemical Quantification of Oxide Interfaces Using Energy-dispersive X-ray ...

137

Rechargeable thin-film electrochemical generator  

DOE Patents (OSTI)

An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

Rouillard, Roger (Beloeil, CA); Domroese, Michael K. (South St. Paul, MN); Hoffman, Joseph A. (Minneapolis, MN); Lindeman, David D. (Hudson, WI); Noel, Joseph-Robert-Gaetan (St-Hubert, CA); Radewald, Vern E. (Austin, TX); Ranger, Michel (Lachine, CA); Sudano, Anthony (Laval, CA); Trice, Jennifer L. (Eagan, MN); Turgeon, Thomas A. (Fridley, MN)

2000-09-15T23:59:59.000Z

138

Thin film photovoltaic device with multilayer substrate  

DOE Patents (OSTI)

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Catalano, Anthony W. (Rushland, PA); Bhushan, Manjul (Wilmington, DE)

1984-01-01T23:59:59.000Z

139

Articles including thin film monolayers and multilayers  

DOE Patents (OSTI)

This invention pertains to thin film assemblies or devices useful as sensors, nonlinear optical materials, and trace material scavengers. It claims a base substrate having an oxide surface layer, and a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate. A metal species may be provided attached to the ligand, and a multifunctional organic ligand may be provided attached to the metal species. A second metal species may be provided attached to the multifunctional ligand.

Li, DeQuan; Swanson, B.I.

1992-12-31T23:59:59.000Z

140

Method of improving field emission characteristics of diamond thin films  

DOE Patents (OSTI)

A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

Krauss, Alan R. (Naperville, IL); Gruen, Dieter M. (Downer Grove, IL)

1999-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Thin-film rechargeable lithium batteries  

SciTech Connect

Rechargeable thin-films batteries with lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. The cathodes include TiS{sub 2}, the {omega} phase of V{sub 2}O{sub 5}, and the cubic spinel Li{sub x}Mn{sub 2}O{sub 4} with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The development of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25 C of 2 {mu}S/cm. Thin-film cells have been cycled at 100% depth of discharge using current densities of 2 to 100 {mu}A/cm{sup 2}. The polarization resistance of the cells is due to the slow insertion rate of Li{sup +} ions into the cathode. Chemical diffusion coefficients for Li{sup +} ions in the three types of cathodes have been estimated from the analysis of ac impedance measurements.

Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

1993-11-01T23:59:59.000Z

142

Rechargeable thin-film lithium batteries  

Science Conference Proceedings (OSTI)

Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

1993-09-01T23:59:59.000Z

143

Spin hall effect in paramagnetic thin films  

E-Print Network (OSTI)

Spintronics, an abbreviation of spin based electronics and also known as magneto electronics, has attracted a lot of interest in recent years. It aims to explore the role of electrons’ spins in building next generation electric devices. Using electrons’ spins rather than electrons’ charges may allow faster, lower energy cost devices. Spin Hall Effect is an important subfield of spintronics. It studies spin current, spin transport, and spin accumulation in paramagnetic systems. It can further understanding of quantum physics, device physics, and may also provide insights for spin injection, spin detection and spin manipulation in the design of the next generation spintronics devices. In this experimental work, two sets of experiments were prepared to detect the Spin Hall Effect in metallic systems. The first set of experiments aims to extract Spin Hall Effect from Double Hall Effect in micrometer size metal thin film patterns. Our experiments proved that the Spin Hall Effect signal was much smaller than the theoretically calculated value due to higher electrical resistivity in evaporated thin films. The second set of experiments employs a multi-step process. It combines micro fabrication and electrochemical method to fabricate a perpendicular ferromagnet rod as a spin injector. Process description and various techniques to improve the measurement sensitivity are presented. Measurement results in aluminum, gold and copper are presented in Chapters III, IV and V. Some new experiments are suggested in Chapters V and VI.

Xu, Huachun

2008-12-01T23:59:59.000Z

144

Apparatus for laser assisted thin film deposition  

DOE Patents (OSTI)

A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

Warner, Bruce E. (Pleasanton, CA); McLean, II, William (Oakland, CA)

1996-01-01T23:59:59.000Z

145

Thin-film Rechargeable Lithium Batteries  

DOE R&D Accomplishments (OSTI)

Rechargeable thin films batteries with lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. The cathodes include TiS{sub 2}, the {omega} phase of V{sub 2}O{sub 5}, and the cubic spinel Li{sub x}Mn{sub 2}O{sub 4} with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The development of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25 C of 2 {mu}S/cm. Thin film cells have been cycled at 100% depth of discharge using current densities of 2 to 100 {mu}A/cm{sup 2}. The polarization resistance of the cells is due to the slow insertion rate of Li{sup +} ions into the cathode. Chemical diffusion coefficients for Li{sup +} ions in the three types of cathodes have been estimated from the analysis of ac impedance measurements.

Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, X.

1993-11-00T23:59:59.000Z

146

A survey of thin-film solar photovoltaic industry & technologies  

E-Print Network (OSTI)

A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

Grama, Sorin

2007-01-01T23:59:59.000Z

147

Thermal Sensor Arrays for The Combinatorial Analysis of Thin Films  

E-Print Network (OSTI)

Thermal Sensor Arrays for The Combinatorial Analysis of Thin Films A dissertation presented Advisor Author Joost J. Vlassak Patrick J. McCluskey Thermal Sensor Arrays for The Combinatorial Analysis analysis of the thermophysical properties of thin films. The continuous growth of integrated circuits

148

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors  

Science Conference Proceedings (OSTI)

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (?-HfIZO) thin film transistors (TFTs). Co-sputtering-processed ?-HfIZO thin films have shown an amorphous phase in nature. ...

Sheng-Po Chang; San-Syong Shih

2012-01-01T23:59:59.000Z

149

Long-laser-pulse method of producing thin films  

DOE Patents (OSTI)

The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California. This invention relates in general to techniques for producing thin films, and in particular to a method of using pulsed laser to deposit high temperature supercoducting thin films. 5 figs.

Balooch, M.; Olander, D.R.; Russo, R.E.

1990-02-20T23:59:59.000Z

150

Organic thin film transistors with double insulator layers  

Science Conference Proceedings (OSTI)

We have investigated a double-layer structured gate dielectric for the organic thin films transistor (OTFT) with the purpose of improving the performance of the SiO"2 gate insulator. A 50nm PMMA layer was coated on top of the SiO"2 gate insulator as ... Keywords: Mobility, On/off ratio, Organic thin film transistor, PMMA

X. Liu; Y. Bai; L. Chen; F. X. Wei; X. B. Zhang; X. Y. Jiang; Zh. L. Zhang

2007-08-01T23:59:59.000Z

151

NREL: Photovoltaics Research - III-V Multijunction Materials and Devices  

NLE Websites -- All DOE Office Websites (Extended Search)

III-V Multijunction Materials and Devices R&D III-V Multijunction Materials and Devices R&D NREL has a strong research capability in III-V multijunction photovoltaic (PV) cells. The inverted metamorphic multijunction (IMM) technology, which is fundamentally a new technology path with breakthrough performance and cost advantages, is a particular focus. We invented and first demonstrated the IMM solar cell and introduced it to the PV industry. Our scientists earlier invented and demonstrated the first-ever multijunction PV cell-and then worked with industry to develop the industry-standard GaInP/Ga(In)As/Ge) technology. III-V multijunction cells, which address both space and terrestrial power needs, have achieved the highest energy conversion efficiencies of all PV cells, with the current record exceeding 40%.

152

Quantum capacitance in scaled down III-V FETs  

E-Print Network (OSTI)

As Si CMOS approaches the end of the roadmap, finding a new transistor technology that allows the extension of Moore's law has become a technical problem of great significance. Among the various candidates, III-V-based ...

Jin, Donghyun

2010-01-01T23:59:59.000Z

153

III-V High-Efficiency Multijunction Photovoltaics (Fact Sheet)  

Science Conference Proceedings (OSTI)

Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for III-V High-Efficiency Multijunction Photovoltaics at the National Center for Photovoltaics.

Not Available

2011-06-01T23:59:59.000Z

154

Metastable, Single Crystalline Nanopillar Growth of III-V Compounds...  

NLE Websites -- All DOE Office Websites (Extended Search)

Metastable, Single Crystalline Nanopillar Growth of III-V Compounds on Lattice-Mismatched Substrates Speaker(s): Connie Chang-Hasnain Date: February 28, 2012 - 12:00pm Location:...

155

Ultrafast thin-film laser-induced breakdown spectroscopy of doped...  

NLE Websites -- All DOE Office Websites (Extended Search)

Ultrafast thin-film laser-induced breakdown spectroscopy of doped oxides Title Ultrafast thin-film laser-induced breakdown spectroscopy of doped oxides Publication Type Journal...

156

A Hyper-Elastic Thin Film Nitinol Flow Diverter for Brain Aneurysms  

Science Conference Proceedings (OSTI)

The thin film Nitinol is sputter deposited with transformation temperatures at or near body temperature (37C). The thin film Nitinol is micromachined using a lift off ...

157

Oxynitride Thin Film Barriers for PV Packaging  

DOE Green Energy (OSTI)

Dielectric thin-film barrier and adhesion-promoting layers consisting of silicon oxynitride materials (SiOxNy, with various stoichiometry) were investigated. For process development, films were applied to glass (TCO, conductive SnO2:F; or soda-lime), polymer (PET, polyethylene terephthalate), aluminized soda-lime glass, or PV cell (a-Si, CIGS) substrates. Design strategy employed de-minimus hazard criteria to facilitate industrial adoption and reduce implementation costs for PV manufacturers or suppliers. A restricted process window was explored using dilute compressed gases (3% silane, 14% nitrous oxide, 23% oxygen) in nitrogen (or former mixtures, and 11.45% oxygen mix in helium and/or 99.999% helium dilution) with a worst-case flammable and non-corrosive hazard classification. Method employed low radio frequency (RF) power, less than or equal to 3 milliwatts per cm2, and low substrate temperatures, less than or equal to 100 deg C, over deposition areas less than or equal to 1000 cm2. Select material properties for barrier film thickness (profilometer), composition (XPS/FTIR), optical (refractive index, %T and %R), mechanical peel strength and WVTR barrier performance are presented.

Glick, S. H.; delCueto, J. A.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

2005-11-01T23:59:59.000Z

158

ITO Thin Films by RF Sputtering for Ethanol Sensing  

Science Conference Proceedings (OSTI)

The sensor for detection of ethanol vapours using RF sputter deposited ITO thin film on glass and Si substrates is reported. The principle of operation is the change of resistance of ITO film on exposure to ethanol vapours. The films were annealed at ... Keywords: Indium Tin Oxide, RF sputtering, ethanol sensor

Sudhir Chandra; H. J. Pandya; A. L. Vyas

2010-07-01T23:59:59.000Z

159

Characterization of lithium phosphorous oxynitride thin films  

DOE Green Energy (OSTI)

Electrical and electrochemical properties of an amorphous thin-film lithium electrolyte, lithium phosphorous oxynitride (Lipon), have been studied with emphasis on the stability window vs Li metal and the behavior of the Li/Lipon interface. Ion conductivity of Lipon exhibits Arrhenius behavior at {minus}26 to +140 C, with a conductivity of 1.7 {times} 10{sup {minus}6}S/cm at 25 C and an activity energy of 0.50 {plus_minus} 0.01 eV. A stability window of 5.5 V was observed with respect to a Li{sup +}/Li reference, and no detectable reaction or degradation was evident at the Li/Lipon interface upon lithium cycling.

Yu, Xiaohua; Bates, J.B.; Jellison, G.E. Jr.

1996-01-01T23:59:59.000Z

160

Thin Film Femtosecond Laser Damage Competition  

SciTech Connect

In order to determine the current status of thin film laser resistance within the private, academic, and government sectors, a damage competition was started at the 2008 Boulder Damage Symposium. This damage competition allows a direct comparison of the current state of the art of high laser resistance coatings since they are tested using the same damage test setup and the same protocol. In 2009 a high reflector coating was selected at a wavelength of 786 nm at normal incidence at a pulse length of 180 femtoseconds. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials and layer count, and spectral results will also be shared.

Stolz, C J; Ristau, D; Turowski, M; Blaschke, H

2009-11-14T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Thin films of mixed metal compounds  

DOE Patents (OSTI)

Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

Mickelsen, R.A.; Chen, W.S.

1985-06-11T23:59:59.000Z

162

Titanium nitride thin films for minimizing multipactoring  

DOE Patents (OSTI)

Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.

Welch, Kimo M. (Mountain View, CA)

1979-01-01T23:59:59.000Z

163

Nanostructured Thin Film Electrolyte for Thin Film Solid Oxide Fuel Cells  

E-Print Network (OSTI)

Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because they are clean, reliable, and almost entirely pollution-free. SOFCs have flexible fuel selections compared with other fuel cell technologies. The main disadvantage of SOFCs is their high operating temperature (~1000șC for conventional SOFCs) which leads to cell cracking and formation of non-conducting compounds at electrolyte/electrode interfaces. Therefore, intermediate temperature SOFCs (ITSOFCs) in the range of 500-700 șC has attracted extensive research interests. To achieve high cell performance at reduced temperatures, it requires high-catalytic activity, high ionic conductivity, and comparable thermal expansion coefficient (TEC) of the cell components. To address the above issues, the research focuses on two main approaches (i.e., the interlayer approach and the electrolyte approach) in order to improve the overall cell performance. First, the design of a thin layer of a vertically-aligned nanocomposite (VAN) structure as an interlayer between the electrolyte and cathode is demonstrated. The development of the VAN structures consisted of the cathode material as a perovskite or ordered double perovskite structure, La0.5Sr0.5CoO3 (LSCO) or PrBaCo2O5 delta (PBCO), and the electrolyte material as a fluorite structure, Ce0.9Gd0.1O1.95 (CGO or GDC), were achieved for thin film solid oxide fuel cell (TFSOFCs). The VAN structure significantly improves the overall performance of the TFSOFC by increasing the interfacial area between the electrolyte and cathode and also acts as a transition layer that improves adhesion and relieves both thermal stress and lattice strain. Second, microstructural and electrical properties of Gd-doped CeO2 (GDC, Ce0.9Gd0.1O1.95) thin films electrolyte are studied for intermediate temperature solid oxide fuel cells (SOFCs). The GDC thin film electrolytes with different grain sizes and grain morphologies were prepared by varying the deposition parameters such as substrate temperature, oxygen partial pressure, target repetition rate, and laser ablation energy. The electrical property of the GDC thin film is strongly affected by the grain size. Third, bilayer electrolytes composed of a gadolinium-doped CeO2 (GDC) layer (~6 micrometer thickness) and an yttria-stabilized ZrO2 (YSZ) layer with various thicknesses (~330 nm, ~440 nm, and ~1 micrometer) are achieved by a pulsed laser deposition (PLD) technique for thin film solid oxide fuel cells (TFSOFCs). One effective approach is to incorporate YSZ thin film as a blocking layer in between the GDC and anode for preventing chemical reduction of GDC and electrical current leakage. This bilayer approach effectively improves the GDC's chemical/ mechanical stability and reduces the OCV loss under reducing conditions. The results suggest that the YSZ thin film serves as a blocking layer for preventing electrical current leakage in the GDC layer and also provides chemical, mechanical, and structural integrity in the cell, which leads to the overall enhanced performance.

Cho, Sungmee

2011-08-01T23:59:59.000Z

164

Method for making surfactant-templated thin films  

DOE Patents (OSTI)

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (New Orleans, LA); Fan, Hong You (Albuquerque, NM)

2010-08-31T23:59:59.000Z

165

Method for making surfactant-templated thin films  

DOE Patents (OSTI)

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

2002-01-01T23:59:59.000Z

166

The state of the art of thin-film photovoltaics  

DOE Green Energy (OSTI)

Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

Surek, T.

1993-10-01T23:59:59.000Z

167

Strain Relaxation and Vacancy Creation in Thin Platinum Films  

Science Conference Proceedings (OSTI)

Synchrotron based combined in situ x-ray diffractometry and reflectometry is used to investigate the role of vacancies for the relaxation of residual stress in thin metallic Pt films. From the experimentally determined relative changes of the lattice parameter a and of the film thickness L the modification of vacancy concentration and residual strain was derived as a function of annealing time at 130 deg. C. The results indicate that relaxation of strain resulting from compressive stress is accompanied by the creation of vacancies at the free film surface. This proves experimentally the postulated dominant role of vacancies for stress relaxation in thin metal films close to room temperature.

Gruber, W.; Chakravarty, S.; Schmidt, H. [Technische Universitaet Clausthal, Institut fuer Metallurgie, Clausthal-Zellerfeld (Germany); Baehtz, C. [Helmholtz Zentrum Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden (Germany); Leitenberger, W. [Universitaet Potsdam, Institut fuer Physik und Astronomie, Potsdam (Germany); Bruns, M. [Karlsruher Institut fuer Technologie, Institute for Applied Materials, Eggenstein-Leopoldshafen (Germany); Karlsruher Institut fuer Technologie, Karlsruher Micro Nano Facility, Eggenstein-Leopoldshafen (Germany); Kobler, A.; Kuebel, C. [Karlsruher Institut fuer Technologie, Institute of Nanotechnology, Eggenstein-Leopoldshafen (Germany); Karlsruher Institut fuer Technologie, Karlsruher Micro Nano Facility, Eggenstein-Leopoldshafen (Germany)

2011-12-23T23:59:59.000Z

168

Thin film photovoltaic device and process of manufacture  

DOE Patents (OSTI)

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Albright, S.P.; Chamberlin, R.

1997-10-07T23:59:59.000Z

169

Thin film photovoltaic device and process of manufacture  

DOE Patents (OSTI)

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

1997-10-07T23:59:59.000Z

170

Thin film photovoltaic device and process of manufacture  

DOE Patents (OSTI)

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Albright, S.P.; Chamberlin, R.

1999-02-09T23:59:59.000Z

171

Thin film photovoltaic device and process of manufacture  

DOE Patents (OSTI)

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

1999-02-09T23:59:59.000Z

172

Functionalized multilayer thin films for protection against acutely toxic agents  

E-Print Network (OSTI)

The recently developed practice of spraying polyelectrolyte solutions onto a substrate in order to construct thin films via the Layer-by-Layer (LbL) technique has been further investigated and extended. In this process a ...

Krogman, Kevin Christopher

2009-01-01T23:59:59.000Z

173

Critical Confinement and Elastic Instability in Thin Solid Films  

E-Print Network (OSTI)

formation; Thin soft films INTRODUCTION Pattern formation by self-organization is a subject of much interest introduced a confinement parameter e Πhq [16] defined as the ratio of two different length scales: thic

Chaudhury, Manoj K.

174

Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)  

Science Conference Proceedings (OSTI)

Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

Not Available

2011-06-01T23:59:59.000Z

175

Properties and sensor performance of zinc oxide thin films  

E-Print Network (OSTI)

Reactively sputtered ZnO thin film gas sensors were fabricated onto Si wafers. The atmosphere dependent electrical response of the ZnO micro arrays was examined. The effects of processing conditions on the properties and ...

Min, Yongki, 1965-

2003-01-01T23:59:59.000Z

176

Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)  

DOE Green Energy (OSTI)

This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

Not Available

2013-06-01T23:59:59.000Z

177

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of...

178

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network (OSTI)

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

179

Biological, Electronic, and Functional Thin Films and Coatings II  

Science Conference Proceedings (OSTI)

Mar 4, 2013 ... Recent Developments in Biological, Electronic, and Functional Thin Films ... Improved Mobility and Transmittance of Room Temperature ... excellent scintillator for numerous applications in lasers, optical lens and radiography.

180

Biological, Electronic, and Functional Thin Films and Coatings I  

Science Conference Proceedings (OSTI)

Mar 4, 2013... scan (PPS) and electrical impedance spectroscopy (EIS). ... Eclipse Active and Passive Solar Control Coatings: Hulya ... In this paper two novel thin film coating systems will be presented for energy conservation solar ...

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

2 Thin Films Prepared by Sequential Evaporation for Photovoltaic  

Science Conference Proceedings (OSTI)

The defects of Cu-Se di-vacancies are formed in Cu(In,Ga)Se2 thin films and influence to the solar cell performance. In this study, we have fabricated Cu(In ...

182

Shock Dynamics in Particle-Laden Thin Films  

E-Print Network (OSTI)

We present theory and experiments for thin film particle-laden flow on an incline. At higher particle concentration and inclination angle, a new phenomenon is observed in which a large particle-rich ridge forms at the ...

Dupuy, B.

2005-04-22T23:59:59.000Z

183

Direct printing of lead zirconate titanate thin films  

E-Print Network (OSTI)

Thus far, use of lead zirconate titanate (PZT) in MEMS has been limited due to the lack of process compatibility with existing MEMS manufacturing techniques. Direct printing of thin films eliminates the need for photolithographic ...

Bathurst, Stephen, 1980-

2008-01-01T23:59:59.000Z

184

Synthesis and Patterning of Calcium and Barium Niobate Thin Films ...  

Science Conference Proceedings (OSTI)

Epitaxial CBN thin films were deposited on MgO and NSTO substrates at 800°C under 1mTorr of oxygen pressure using Pulsed Laser Deposition technique.

185

Initiated chemical vapor deposition of functional polyacrylic thin films  

E-Print Network (OSTI)

Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

Mao, Yu, 1975-

2005-01-01T23:59:59.000Z

186

Deriving Deformation Mechanisms in Nanocrystalline AuCu Thin Films  

Science Conference Proceedings (OSTI)

... in a SEM on nc gold and gold-copper thin films adherent to polymer substrate. .... Lithiation Mechanism of Individual SnO2 Nanowires in a Flooding Geometry.

187

Simulated Space Environmental Testing on Thin Films  

Science Conference Proceedings (OSTI)

An exploratory program has been conducted, to irradiate some mature commercial and some experimental polymer films with radiation simulating certain Earth orbits, and to obtain data about the response of each test film''s reflective and tensile properties. ...

Russell Dennis A.; Fogdall Larry B.; Bohnhoff Gail

2000-04-01T23:59:59.000Z

188

Recent technological advances in thin film solar cells  

DOE Green Energy (OSTI)

High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

Ullal, H.S.; Zwelbel, K.; Surek, T.

1990-03-01T23:59:59.000Z

189

Dry-transfer of chemical vapour deposited nanocarbon thin films  

E-Print Network (OSTI)

equipment and measurement I thank Dr Xiulia Xu, high resolution transmission electron microscopy - Dr Caterina Ducati, Mr Sai Shivareddy and Dr Jamie Warner (Oxford University) and assistance with supercapacitor manufacturing and measurement - Mr (soon... that these thin films behave, in a macroscopic sense, similar to traditional c-axis conductive graphite and deviate toward tunnel dominated conduction with increasing degrees of network disorder. Various MWCNT-based thin film field emitters were considered...

Cole, Matthew Thomas

2012-01-10T23:59:59.000Z

190

Polycrystalline thin-film solar cells and modules  

DOE Green Energy (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

191

Polycrystalline thin-film solar cells and modules  

DOE Green Energy (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

192

Research on polycrystalline thin-film materials, cells, and modules  

DOE Green Energy (OSTI)

The US Department of Energy (DOE) supports research activities in polycrystalline thin films through the Polycrystalline Thin-Film Program at the Solar Energy Research Institute (SERI). This program includes research and development (R D) in both copper indium diselenide and cadmium telluride thin films for photovoltaic applications. The objective of this program is to support R D of photovoltaic cells and modules that meet the DOE long-term goals of high efficiency (15%--20%), low cost ($50/m{sup 2}), and reliability (30-year life time). Research carried out in this area is receiving increased recognition due to important advances in polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules. These have become the leading thin-film materials for photovoltaics in terms of efficiency and stability. DOE has recognized this potential through a competitive initiative for the development of CuInSe{sub 2} and CdTe modules. This paper focuses on the recent progress and future directions of the Polycrystalline Thin-Film Program and the status of the subcontracted research on these promising photovoltaic materials. 26 refs., 12 figs, 1 tab.

Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

1990-11-01T23:59:59.000Z

193

Understanding Thin Film Structure for the Rational Design of  

NLE Websites -- All DOE Office Websites (Extended Search)

Understanding Thin Film Structure for the Rational Design of Understanding Thin Film Structure for the Rational Design of High-performance Organic Semiconductors for Plastic Electronics Organic semiconductors are attracting considerable research interest due to their potential applications in low-cost electronics such as organic light emitting diode (OLED) displays, RF identification tags (RFID), smart cards and electronic paper. The development of p-conjugated materials, which are composed of alternating single and double chemical bonds, are the foundation of these applications. In the past decade research in this field has progressed to the extent that desirable charge transport in the organic semiconductor film in organic thin film transistors (OTFT) can be achieved through molecular design by selective placement of electron-rich, electron-withdrawing, and aromatic groups in different parts of the molecule. Although the electronic properties are easily tuned by molecular design, the molecular packing within the thin film and the film microstructure have a significant influence on the OTFT performance. Despite this importance, this interrelationship between molecular structure, thin film molecular packing and charge transport are only poorly understood.

194

Thin aerogel films for optical, thermal, acoustic, and electronic applications  

Science Conference Proceedings (OSTI)

Aerogels are a special class of continuously porous solid materials which are characterized by nanometer size particles and pores. Typically, aerogels are made using sol-gel chemistry to form a solvent filled, high porosity gel that is dried by removing the solvent without collapsing the tenuous solid phase. As bulk materials, aerogels are known to have many exceptional, and even some unique physical properties. Aerogels provide the highest thermal insulation and lowest dielectric constant of any other material known. However, some important applications require the aerogels in the form of thin films or sheets. For example, electronic applications require micrometer thin aerogel films bonded to a substrate, and others require thicker films, either on a substrate or as free standing sheets. Special methods are required to make aerogel thin films or sheets. In this paper, the authors discuss the special conditions needed to fabricate thin aerogel films and they describe methods to make films and thin sheets. They also give some specific applications for which aerogel films are being developed.

Hrubesh, L.W.; Poco, J.F. [Lawrence Livermore National Lab., CA (United States). Chemistry and Material Sciences Dept.

1994-09-01T23:59:59.000Z

195

Front and backside processed thin film electronic devices  

Science Conference Proceedings (OSTI)

This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI); Yuan, Hao-Chih (Lakewood, CO); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI)

2012-01-03T23:59:59.000Z

196

Geometric shape control of thin film ferroelectrics and resulting structures  

DOE Patents (OSTI)

A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

197

Characterization of polysilicon thin films for MEMS applications  

Science Conference Proceedings (OSTI)

The microstructure of thin polycrystalline films formed by molecular beam epitaxy (MBE) has been studied by transmission electron microscopy (TEM). Beneficial compressive residual stress was introduced by cavitation impacts. Surface morphology was characterized ... Keywords: defects, gavitation, molecular beam epitaxy, polysilicon film, transmission electron microscopy

Dan O. Macodiyo; Hitoshi Soyama; Kazuo Hayashi

2006-07-01T23:59:59.000Z

198

Lithography scaling issues associated with III-V MOSFETs  

Science Conference Proceedings (OSTI)

In this work we investigate fabrication issues associated with scaling down the gate length and source drain contact separation of a III-V MOSFET. We used high resolution electron-beam lithography and lift-off for gate and ohmic contact patterning to ... Keywords: E-beam, GaAs, Lift-off, MOSFET, PMMA, Resist thickness variation

O. Ignatova; S. Thoms; W. Jansen; D. S. Macintyre; I. Thayne

2010-05-01T23:59:59.000Z

199

Composite polymeric film and method for its use in installing a very thin polymeric film in a device  

DOE Patents (OSTI)

A composite polymeric film and a method for its use in forming and installing a very thin (<10 .mu.m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectively dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to be successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

Duchane, David V. (Los Alamos, NM); Barthell, Barry L. (Tesuque, NM)

1984-01-01T23:59:59.000Z

200

Composite polymeric film and method for its use in installing a very-thin polymeric film in a device  

DOE Patents (OSTI)

A composite polymeric film and a method for its use in forming and installing a very thin (< 10 ..mu..m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectiely dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to e successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

Duchane, D.V.; Barthell, B.L.

1982-04-26T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Effects of humidity during photoprocessing on thin film metallization adhesion  

SciTech Connect

Humidity effects during photoprocessing on tantalum/chromium/gold thin film networks (TFNs) were investigated. Humidity conditions at various process steps were controlled by placing either desiccant or water in handling containers for the TFNs. The TFNs photoprocessed in humid conditions had a much higher occurrence of metallization failures compared to TFNs processed in dry conditions. Ceramic surface defects were shown to cause pores in the thin films, and these pores enhanced corrosion susceptibility for the films. This study resulted in a desiccated storage process for production of TFNs.

Norwood, D.P.

1980-03-01T23:59:59.000Z

202

Thin-film absorber for a solar collector  

DOE Green Energy (OSTI)

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, W.G.

1982-02-09T23:59:59.000Z

203

Ultrafast laser ablation of gold thin film targets  

Science Conference Proceedings (OSTI)

Ultrafast laser ablation of a gold thin film is studied and compared with that of a bulk target, with particular emphasis given to the process of nanoparticles generation. The process is carried out in a condition where a single laser shot removes all the irradiated film spot. The experimental results evidence interesting differences and, in particular, a reduction of the nanoparticles size, and a narrowing of a factor two of their size distribution in the case of ablation of a thin film target, a feature which we relate to a more uniform heating of the target material. We thus show that ultrashort laser ablation of thin films provides a promising way of controlling plume features and nanoparticles size.

Amoruso, S.; Ausanio, G.; Bruzzese, R. [Dipartimento di Scienze Fisiche, Universita degli Studi di Napoli Federico II, Complesso Universitario di Monte S. Angelo, Via Cintia, I-80126 Napoli (Italy); CNR-SPIN, Complesso Universitario di Monte S. Angelo, Via Cintia, I-80126 Napoli (Italy); Nedyalkov, N. N.; Atanasov, P. A. [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsaridradsko shose Boulevard, Sofia 1784 (Bulgaria); Wang, X. [CNR-SPIN, Complesso Universitario di Monte S. Angelo, Via Cintia, I-80126 Napoli (Italy)

2011-12-15T23:59:59.000Z

204

Thin-film rechargeable lithium batteries for implantable devices  

DOE Green Energy (OSTI)

Thin films of LiCoO{sub 2} have been synthesized in which the strongest x-ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin-film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001 %/cycle or less. The reliability and performance of Li-LiCoO{sub 2} thin-film batteries make them attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.

Bates, J.b.; Dudney, N.J.

1997-05-01T23:59:59.000Z

205

Thin Film Packaging Solutions for High Efficiency OLED Lighting Products  

Science Conference Proceedings (OSTI)

The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology was characterized as having less than 10% change in transmission during the 15,000 hour test period; (3) demonstrated thin film encapsulation of a phosphorescent OLED device with 1,500 hours of lifetime at 60 C and 80% RH; (4) demonstrated that a thin film laminate encapsulation, in addition to the direct thin film deposition process, of a polymer OLED device was another feasible packaging strategy for OLED lighting. The thin film laminate strategy was developed to mitigate defects, demonstrate roll-to-roll process capability for high volume throughput (reduce costs) and to support a potential commercial pathway that is less dependent upon integrated manufacturing since the laminate could be sold as a rolled good; (5) demonstrated that low cost 'blue' glass substrates could be coated with a siloxane barrier layer for planarization and ion-protection and used in the fabrication of a polymer OLED lighting device. This study further demonstrated that the substrate cost has potential for huge cost reductions from the white borosilicate glass substrate currently used by the OLED lighting industry; (6) delivered four-square feet of white phosphorescent OLED technology, including novel high efficiency devices with 82 CRI, greater than 50 lm/W efficiency, and more than 1,000 hours lifetime in a product concept model shelf; (7) presented and or published more than twenty internal studies (for private use), three external presentations (OLED workshop-for public use), and five technology-related external presentations (industry conferences-for public use); and (8) issued five patent applications, which are in various maturity stages at time of publication. Delivery of thin film encapsulated white phosphorescent OLED lighting technology remains a challenging technical achievement, and it seems that commercial availability of thin, bright, white OLED light that meets market requirements will continue to require research and development effort. However, there will be glass encapsulated white OLED lighting products commercialized in niche markets during the 2008 calendar year. This commercializ

None

2008-06-30T23:59:59.000Z

206

Pulsed laser processing of high temperature superconducting thin films  

SciTech Connect

Systematic studies of the effects of pulsed laser deposition processing parameters on plume dynamics and resultant film properties have been performed. Plume angular distributions, cos{sup m}({theta}), were observed to be variable between 1 > m > 10 depending on laser energy density and spot size. Under optimized conditions, epitaxial, superconducting thin films could be grown in-situ on a variety of single-crystal substrates. High quality, 200 nm thick films were obtained at deposition rates approaching 15 nm/sec. Additionally, the patterning of YBa{sub 2}Cu{sub 3}O{sub 7-x} thin films has been achieved by a process which combines thermal oxygen diffusion and laser annealing. This process is performed under relatively mild conditions which allows the structural integrity of the films to be preserved. 9 refs., 6 figs.

Muenchausen, R.E.; Dye, R.C.; Estler, R.C.; Foltyn, S.; Garcia, A.R.; Hubbard, K.M.; Nogar, N.S.; Wu, X.D. (Los Alamos National Lab., NM (USA)); Carim, A.; Mukherjee, A.; Brueck, S.R.J. (New Mexico Univ., Albuquerque, NM (USA))

1990-01-01T23:59:59.000Z

207

Nanostructured thin films for solid oxide fuel cells  

E-Print Network (OSTI)

The goals of this work were to synthesize high performance perovskite based thin film solid oxide fuel cell (TF-SOFC) cathodes by pulsed laser deposition (PLD), to study the structural, electrical and electrochemical properties of these cathodes and to establish structure-property relations for these cathodes in order to further improve their properties and design new structures. Nanostructured cathode thin films with vertically-aligned nanopores (VANP) were processed using PLD. These VANP structures enhance the oxygen-gas phase diffusivity, thus improve the overall TF-SOFC performance. La0.5Sr0.5CoO3 (LSCO) and La0.4Sr0.6Co0.8Fe0.2O3 (LSCFO) were deposited on various substrates (YSZ, Si and pressed Ce0.9Gd0.1O1.95 (CGO) disks). Microstructures and properties of the nanostructured cathodes were characterized by transmission electron microscope (TEM), high resolution TEM (HRTEM), scanning electron microscope (SEM) and electrochemical impedance spectroscopy (EIS) measurements. A thin layer of vertically-aligned nanocomposite (VAN) structure was deposited in between the CGO electrolyte and the thin film LSCO cathode layer for TF-SOFCs. The VAN structure consists of the electrolyte and the cathode materials in the composition of (CGO) 0.5 (LSCO) 0.5. The self-assembled VAN nanostructures contain highly ordered alternating vertical columns formed through a one-step thin film deposition using a PLD technique. These VAN structures significantly increase the interface area between the electrolyte and the cathode as well as the area of active triple phase boundary (TPB), thus improving the overall TF-SOFC performance at low temperatures, as low as 400oC, demonstrated by EIS measurements. In addition, the binary VAN interlayer could act as the transition layer that improves the adhesion and relieves the thermal stress and lattice strain between the cathode and the electrolyte. The microstructural properties and growth mechanisms of CGO thin film prepared by PLD technique were investigated. Thin film CGO electrolytes with different grain sizes and crystal structures were prepared on single crystal YSZ substrates under different deposition conditions. The effect of the deposition conditions such as substrate temperature and laser ablation energy on the microstructural properties of these films are examined using XRD, TEM, SEM, and optical microscope. CGO thin film deposited above 500 șC starts to show epitaxial growth on YSZ substrates. The present study suggests that substrate temperature significantly influences the microstructure of the films especially film grain size.

Yoon, Jongsik

2008-12-01T23:59:59.000Z

208

Uncooled thin film pyroelectric IR detector with aerogel thermal isolation  

Science Conference Proceedings (OSTI)

Uncooled pyroelectric IR imaging systems, such as night vision goggles, offer important strategic advantages in battlefield scenarios and reconnaissance surveys. Until now, the current technology for fabricating these devices has been limited by low throughput and high cost which ultimately limit the availability of these sensor devices. We have developed and fabricated an alternative design for pyroelectric IR imaging sensors that utilizes a multilayered thin film deposition scheme to create a monolithic thin film imaging element on an active silicon substrate for the first time. This approach combines a thin film pyroelectric imaging element with a thermally insulating SiO{sub 2} aerogel thin film to produce a new type of uncooled IR sensor that offers significantly higher thermal, spatial, and temporal resolutions at a substantially lower cost per unit. This report describes the deposition, characterization and optimization of the aerogel thermal isolation layer and an appropriate pyroelectric imaging element. It also describes the overall integration of these components along with the appropriate planarization, etch stop, adhesion, electrode, and blacking agent thin film layers into a monolithic structure. 19 refs., 8 figs., 6 tabs.

Ruffner, J.A.; Clem, P.G.; Tuttle, B.A. [and others

1998-01-01T23:59:59.000Z

209

Pulsed laser deposition of ITO thin films and their characteristics  

SciTech Connect

The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 Multiplication-Sign 10{sup -4} {Omega} cm has been achieved in the ITO films with content of Sn 5 at %.

Zuev, D. A., E-mail: zuewda@yandex.ru; Lotin, A. A.; Novodvorsky, O. A.; Lebedev, F. V.; Khramova, O. D. [Russian Academy of Sciences, Institute on Laser and Information Technologies (Russian Federation); Petuhov, I. A.; Putilin, Ph. N.; Shatohin, A. N.; Rumyanzeva, M. N.; Gaskov, A. M. [Moscow State University, Faculty of Chemistry (Russian Federation)

2012-03-15T23:59:59.000Z

210

III-V/Silicon Lattice-Matched Tandem Solar Cells  

DOE Green Energy (OSTI)

A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated a monolithic III-V-on-silicon tandem solar cell in which most of the III-V layers are nearly lattice-matched to the silicon substrate. The cell includes a GaNPAs top cell, a GaP-based tunnel junction (TJ), and a diffused silicon junction formed during the epitaxial growth of GaNP on the silicon substrate. To accomplish this, we have developed techniques for the growth of high crystalline quality lattice-matched GaNPAs on silicon by metal-organic vapor-phase epitaxy.

Geisz, J.; Olson, J.; Friedman, D.; Kurtz, S.; McMahon, W.; Romero, M.; Reedy, R.; Jones, K.; Norman, A.; Duda, A.; Kibbler, A.; Kramer, C.; Young, M.

2005-01-01T23:59:59.000Z

211

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

212

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

213

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

214

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

215

Low Temperature Chemical Vapor Deposition Of Thin Film Magnets  

DOE Patents (OSTI)

A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

Miller, Joel S. (Salt Lake City, UT); Pokhodnya, Kostyantyn I. (Salt Lake City, UT)

2003-12-09T23:59:59.000Z

216

SPUTTERED THIN FILM PHOTOVOLTAICS - Home - Energy ...  

for photovoltaic (PV) applications .These processes result in films with better unif ormity over ... ultimately resulting in a more efficient solar ce ...

217

Improving the performance of the organic thin-film transistors with thin insulating lithium fluoride buffer layer  

Science Conference Proceedings (OSTI)

The pentacene-based organic thin-film transistors (OTFTs) with a thin insulating lithium fluoride (LiF) buffer layer between the pentacene and source/drain electrodes were fabricated. Compared with conventional OTFTs, the introduction of the buffer layer ... Keywords: OTFT, Organic thin-film transistor, Pentacene

Wei Hu; Yi Zhao; Jingying Hou; Chunsheng Ma; Shiyong Liu

2007-04-01T23:59:59.000Z

218

Growth study of ion assisted evaporated molybdenum thin films  

Science Conference Proceedings (OSTI)

We reported optimization of ion-to-atom ratios and ion energy for growth of molybdenum thin film on oxidized silicon substrate using ion assisted electron beam evaporation system. The ion-to-atom ratio is varied by independently adjusting the ion current density and deposition rate. The structural characterization of the films is carried out by hard X-ray reflectivity. We observed improvement in film density from 85.5% to 98.2% and film roughness from {approx}2 nm to 0.84nm on {approx}26 nm thick Mo film by optimizing ion parameters. The observed results are discussed considering the effect of kinetic of adatoms during growth of film.

Yadav, P. K.; Nayak, M.; Lodha, G. S.; Rai, S. [X-ray Optics Section, Indus Synchrotrons Utilization Division, Raja Ramanna Centre For Advanced Technology, Indore-452013 (India)

2012-06-25T23:59:59.000Z

219

Preparation of a semiconductor thin film  

SciTech Connect

A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, Martin (TuBingen, DE); Schulz, Douglas L. (Denver, CO); Curtis, Calvin J. (Lakewood, CO); Ginley, David S. (Evergreen, CO)

1998-01-01T23:59:59.000Z

220

Electronic processes in thin-film PV materials. Final report  

DOE Green Energy (OSTI)

The electronic and optical processes in an important class of thin-film PV materials, hydrogenated amorphous silicon (a-Si:H) and related alloys, have been investigated using several experimental techniques designed for thin-film geometries. The experimental techniques include various magnetic resonance and optical spectroscopies and combinations of these two spectroscopies. Two-step optical excitation processes through the manifold of silicon dangling bond states have been identifies as important at low excitation energies. Local hydrogen motion has been studied using nuclear magnetic resonance techniques and found to be much more rapid than long range diffusion as measured by secondary ion mass spectroscopy. A new metastable effect has been found in a-Si:H films alloyed with sulfur. Spin-one optically excited states have been unambiguously identified using optically detected electron spin resonance. Local hydrogen bonding in microcrystalline silicon films has been studied using NMR.

Taylor, P.C.; Chen, D.; Chen, S.L. [and others

1998-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Effects of acetylacetone additions on PZT thin film processing  

SciTech Connect

Sol-gel processing methods are frequently used for the fabrication of lead zirconate titanate (PZT) thin films for many electronic applications. Our standard approach for film fabrication utilizes lead acetate and acetic acid modified metal alkoxides of zirconium and titanium in the preparation of our precursor solutions. This report highlights some of our recent results on the effects of the addition of a second chelating ligand, acetylacetone, to this process. The authors discuss the changes in film drying behavior, densification and ceramic microstructure which accompany acetylacetone additions to the precursor solution and relate the observed variations in processing behavior to differences in chemical precursor structure induced by the acetylacetone ligand. Improvements in thin film microstructure, ferroelectric and optical properties are observed when acetylacetone is added to the precursor solution.

Schwartz, R.W.; Assink, R.A.; Dimos, D.; Sinclair, M.B.; Boyle, T.J.; Buchheit, C.D.

1995-02-01T23:59:59.000Z

222

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents (OSTI)

A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

Mitlitsky, Fred (Livermore, CA); Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Colella, Nicholas J. (Livermore, CA)

1998-02-03T23:59:59.000Z

223

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents (OSTI)

A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

1998-02-03T23:59:59.000Z

224

Perovskite phase thin films and method of making  

DOE Patents (OSTI)

The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

Boyle, Timothy J. (Albuquerque, NM); Rodriguez, Mark A. (Albuquerque, NM)

2000-01-01T23:59:59.000Z

225

Experimental thin film deposition and surface analysis techniques  

DOE Green Energy (OSTI)

An attempt has been made to present some of the thin-film deposition and surface analysis techniques which may be useful in growing superionic conducting materials. Emphasis is made on the importance of being careful in selecting process parameters and materials in order to produce films with properties outlined in this article. Also, special care should be given to proper consideration of grain boundary effects.

Collins, W.E.; Rambabu, B.

1986-01-01T23:59:59.000Z

226

Method for producing high quality thin layer films on substrates  

DOE Patents (OSTI)

A method for producing high quality, thin layer films of inorganic compounds upon the surface of a substrate is disclosed. The method involves condensing a mixture of preselected molecular precursors on the surface of a substrate and subsequently inducing the formation of reactive species using high energy photon or charged particle irradiation. The reactive species react with one another to produce a film of the desired compound upon the surface of the substrate. 4 figures.

Strongin, M.; Ruckman, M.; Strongin, D.

1994-04-26T23:59:59.000Z

227

Method for producing high quality thin layer films on substrates  

DOE Patents (OSTI)

A method for producing high quality, thin layer films of inorganic compounds upon the surface of a substrate is disclosed. The method involves condensing a mixture of preselected molecular precursors on the surface of a substrate and subsequently inducing the formation of reactive species using high energy photon or charged particle irradiation. The reactive species react with one another to produce a film of the desired compound upon the surface of the substrate.

Strongin, Myron (Center Moriches, NY); Ruckman, Mark (Middle Island, NY); Strongin, Daniel (Port Jefferson, NY)

1994-01-01T23:59:59.000Z

228

Substrates suitable for deposition of superconducting thin films  

DOE Patents (OSTI)

A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

Feenstra, Roeland (Oak Ridge, TN); Boatner, Lynn A. (Oak Ridge, TN)

1993-01-01T23:59:59.000Z

229

Fabrication and testing of thermoelectric thin film devices  

DOE Green Energy (OSTI)

Two thin-film thermoelectric devices are experimentally demonstrated. The relevant thermal loads on the cold junction of these devices are determined. The analytical form of the equation that describes the thermal loading of the device enables one to model the performance based on the independently measured electronic properties of the films forming the devices. This model elucidates which parameters determine device performance, and how they can be used to maximize performance.

Wagner, A.V.; Foreman, R.J.; Summers, L.J.; Barbee, T.W. Jr.; Farmer, J.C. [Lawrence Livermore National Lab., CA (United States). Chemistry and Materials Science Dept.

1996-03-01T23:59:59.000Z

230

Initiated chemical vapor deposition of polymeric thin films : mechanism and applications  

E-Print Network (OSTI)

Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness ...

Chan, Kelvin, Ph. D. Massachusetts Institute of Technology

2005-01-01T23:59:59.000Z

231

Characterization of LiNi?.?Mn?.?O? Thin Film Cathode Prepared by Pulsed Laser Deposition  

E-Print Network (OSTI)

LiNi?.?Mn?.?O? thin films have been grown by pulsed laser deposition (PLD) on stainless steel (SS) substrates. The crystallinity and structure of thin films were investigated by X-ray diffraction (XRD). Microstructure and ...

Xia, Hui

232

High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing  

E-Print Network (OSTI)

One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

233

Orientation of MgO thin films on Si(001) prepared by pulsed laser deposition  

E-Print Network (OSTI)

Pulsed laser deposition method was employed to grow MgO thin films with preferred orientation on bare Si(100) and SiO?/Si(100) substrates. The orientation of MgO thin films was systematically investigated by varying ...

Zhu, Tie-Jun

234

The development of a thin-film rollforming process for pharmaceutical continuous manufacturing  

E-Print Network (OSTI)

In this thesis, a continuous rollforming process for the folding of thin-films was proposed and studied as a key step in the continuous manufacturing of pharmaceutical tablets. HPMC and PEG based polymeric thin-films were ...

Slaughter, Ryan (Ryan R.)

2013-01-01T23:59:59.000Z

235

Anisotropic dewetting in ultra-thin single-crystal silicon-on-insulator films  

E-Print Network (OSTI)

The single crystal silicon-on-insulator thin film materials system represents both an ideal model system for the study of anisotropic thin film dewetting as well as a technologically important system for the development ...

Danielson, David T. (David Thomas)

2008-01-01T23:59:59.000Z

236

Thin-film multichip module packages for high-end IBM servers  

Science Conference Proceedings (OSTI)

A new generation of multilevel thin-film packages has been developed for IBM high-end S/390ź and AS/400ź systems. Thin-film structures in these packages are nonplanar and can be fabricated by either pattern electroplating ...

E. D. Perfecto; A. P. Giri; R. R. Shields; H. P. Longworth; J. R. Pennacchia; M. P. Jeanneret

1998-09-01T23:59:59.000Z

237

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

DOE Green Energy (OSTI)

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

238

Development of Y-doped ZnO Thin Films via Novel Ink Jet Printing ...  

Science Conference Proceedings (OSTI)

Synthesis and Characterization of Plasma Polymerized Thin Films Deposited from Benzene and Hexamethyldisiloxane Using (PECVD) Method · Synthesis and ...

239

Some a priori estimates for a singular evolution equation arising in thin-film dynamics  

Science Conference Proceedings (OSTI)

Keywords: finite extinction time, global Harnack inequality, ill-posed problem, porous-medium equation, thin-film dynamics

Stephen H. Davis; Emmanuele DiBenedetto; David J. Diller

1996-05-01T23:59:59.000Z

240

Ultrashort pulse laser deposition of thin films  

DOE Patents (OSTI)

Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

Perry, Michael D. (Livermore, CA); Banks, Paul S. (Livermore, CA); Stuart, Brent C. (Fremont, CA)

2002-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Method for fabricating thin films of pyrolytic carbon  

DOE Patents (OSTI)

The present invention relates to a method for fabricating ultra-thin films of pyrolytic carbon. Pyrolytic carbon is vapor deposited onto a concave surface of a heated substrate to a total uniform thickness in the range of about 0.1 to 1.0 micrometer. The carbon film on the substrate is provided with a layer of adherent polymeric resin. The resulting composite film of pyrolytic carbon and polymeric resin is then easily separated from the substrate by shrinking the polymeric resin coating with thermally induced forces.

Brassell, Gilbert W. (Lenoir City, TN); Lewis, Jr., John (Oak Ridge, TN); Weber, Gary W. (Amherst, NY)

1982-01-01T23:59:59.000Z

242

Time-Resolved Magnetic Flux and AC-Current Distributions in Superconducting YBCO Thin Films and  

E-Print Network (OSTI)

Time-Resolved Magnetic Flux and AC-Current Distributions in Superconducting YBCO Thin Films magnetic field. We study the interaction behavior of YBCO thin films in an ac transport current and a dc the calibrated field profiles. The current density evolution in YBCO thin films is studied by TRMOI as a function

Lewis, Robert Michael

243

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b  

E-Print Network (OSTI)

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b , Ounsi of an absorbing planar photonic crystal within a thin film photovoltaic cell. The devices are based on a stack with large areas. Keywords: Photonic crystal, Photovoltaic solar cell, Thin film solar cell, Hydrogenated

Paris-Sud XI, Université de

244

Microwave plasma assisted supersonic gas jet deposition of thin film materials  

DOE Patents (OSTI)

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

Schmitt, III, Jerome J. (New Haven, CT); Halpern, Bret L. (Bethany, CT)

1993-01-01T23:59:59.000Z

245

Identification, Characterization, and Implications of Shadow Degradation in Thin Film Solar Cells  

E-Print Network (OSTI)

that the SD is a generic reliability concern for all thin film PV technologies, however, in this paper we, USA Abstract-- We describe a comprehensive study of intrinsic reliability issue arising from partial reliability concern for thin film solar cell. Keywords ­ Thin film solar cells, voltage stress, performance

Alam, Muhammad A.

246

Thin Films and the Systems-Driven Approach  

DOE Green Energy (OSTI)

A systems-driven approach is used to discern tradeoffs between cost and efficiency improvements for various thin-film module technologies and designs. Prospects for reduced system cost via such strategies are enhanced as balance-of-systems costs decline, and some strategies are identified for greater research focus.

Zweibel, K.

2005-01-01T23:59:59.000Z

247

Method for double-sided processing of thin film transistors  

DOE Patents (OSTI)

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Yuan, Hao-Chih (Madison, WI); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI); Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI)

2008-04-08T23:59:59.000Z

248

Front and backside processed thin film electronic devices  

DOE Patents (OSTI)

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Yuan, Hao-Chih (Madison, WI); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI); Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI)

2010-10-12T23:59:59.000Z

249

Method of preparing thin film polymeric gel electrolytes  

DOE Patents (OSTI)

Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

Derzon, Dora K. (Albuquerque, NM); Arnold, Jr., Charles (Albuquerque, NM)

1997-01-01T23:59:59.000Z

250

Avalanches through windows: Multiscale visualization in magnetic thin films  

E-Print Network (OSTI)

Avalanches through windows: Multiscale visualization in magnetic thin films Alessandro Magni dynamics, but are strongly dependent on the size of the windows chosen. Here we investigate how to properly sub-window of the entire sample. Usually, windows of varying sizes are used, and the distributions

Sethna, James P.

251

Electroplating of Cu(Ag) thin films for interconnect applications  

Science Conference Proceedings (OSTI)

Electromigration effects in interconnect metallizations cause a need for materials with superior resistance against electromigration failure but with adequate electrical properties. In principle, Cu(Ag) alloys are potential candidates to become an interconnect ... Keywords: Copper-silver alloy thin film, Electrochemical deposition, Interconnect material

S. Strehle; S. Menzel; J. W. Bartha; K. Wetzig

2010-02-01T23:59:59.000Z

252

Radiation tolerance of ultra-thin Formvar films  

Science Conference Proceedings (OSTI)

Mechanical behavior of free-standing polymer films with submicron thicknesses exposed to a radiation environment is poorly understood. Here, we study 110-nm-thin free-standing polyvinyl formal (Formvar) films irradiated at room temperature with 1-5 keV electrons or 3 MeV alpha particles. We measure mechanical properties and the elemental composition by spherical indentation and high-energy ion scattering, respectively. Results show that, with increasing radiation dose, the effective failure strain and film thickness decrease monotonically, while the dose dependence of the Young's modulus is non-monotonic. The failure strain and modulus scale with the average energy deposited in the film, while the film thickness exhibits a more complex behavior.

Stadermann, M.; Kucheyev, S. O.; Lewicki, J.; Letts, S. A. [Lawrence Livermore National Laboratory, Livermore, California 94551 (United States)

2012-08-13T23:59:59.000Z

253

Electronic structure of BAs and boride III-V alloys  

SciTech Connect

Boron arsenide, the typically ignored member of the Group-III--V arsenide series BAs-AlAs-GaAs-InAs is found to resemble silicon electronically: its {Gamma} conduction-band minimum is p-like ({Gamma}{sub 15}), not s-like ({Gamma}{sub 1c}), it has an X{sub 1c}-like indirect band gap, and its bond charge is distributed almost equally on the two atoms in the unit cell, exhibiting nearly perfect covalency. The reasons for these are tracked down to the anomalously low atomic p orbital energy in the boron and to the unusually strong s--s repulsion in BAs relative to most other Group-III--V compounds. We find unexpected valence-band offsets of BAs with respect to GaAs and AlAs. The valence-band maximum (VBM) of BAs is significantly higher than that of AlAs, despite the much smaller bond length of BAs, and the VBM of GaAs is only slightly higher than in BAs. These effects result from the unusually strong mixing of the cation and anion states at the VBM. For the BAs-GaAs alloys, we find (i) a relatively small ({approx}3.5 eV) and composition-independent band-gap bowing. This means that while addition of small amounts of nitrogen to GaAs lowers the gap, addition of small amounts of boron to GaAs raises the gap; (ii) boron ''semilocalized'' states in the conduction band (similar to those in GaN-GaAs alloys); and (iii) bulk mixing enthalpies that are smaller than in GaN-GaAs alloys. The unique features of boride Group-III--V alloys offer new opportunities in band-gap engineering.

Hart, Gus L. W.; Zunger, Alex

2000-11-15T23:59:59.000Z

254

Electronic structure of BAs and boride III–V alloys  

E-Print Network (OSTI)

Boron arsenide, the typically-ignored member of the III–V arsenide series BAs–AlAs–GaAs– InAs is found to resemble silicon electronically: its ? conduction band minimum is p-like (?15), not s-like (?1c), it has an X1c-like indirect band gap, and its bond charge is distributed almost equally on the two atoms in the unit cell, exhibiting nearly perfect covalency. The reasons for these are tracked down to the anomalously low atomic p orbital energy in the boron and to the unusually strong s–s repulsion in BAs relative to most other III–V compounds. We find unexpected valence band offsets of BAs with respect to GaAs and AlAs. The valence band maximum (VBM) of BAs is significantly higher than that of AlAs, despite the much smaller bond length of BAs, and the VBM of GaAs is only slightly higher than in BAs. These effects result from the unusually strong mixing of the cation and anion states at the VBM. For the BAs–GaAs alloys, we find (i) a relatively small (?3.5 eV) and composition-independent band gap bowing. This means that while addition of small amounts of nitrogen to GaAs lowers the gap, addition of small amounts of boron to GaAs raises the gap (ii) boron “semi-localized” states in the conduction band (similar to those in GaN–GaAs alloys), and (iii) bulk mixing enthalpies which are smaller than in GaN–GaAs alloys. The unique features of boride III–V alloys offer new opportunities in band gap engineering. I.

Gus L. W. Hart; Alex Zunger

2000-01-01T23:59:59.000Z

255

III-V Growth on Silicon Toward a Multijunction Cell  

DOE Green Energy (OSTI)

A III-V on Si multijunction solar cell promises high efficiency at relatively low cost. The challenges to epitaxial growth of high-quality III-Vs on Si, though, are extensive. Lattice-matched (LM) dilute-nitride GaNPAs solar cells have been grown on Si, but their performance is limited by defects related to the nitrogen. Advances in the growth of lattice-mismatched (LMM) materials make more traditional III-Vs, such as GaInP and GaAsP, very attractive for use in multijunction solar cells on silicon.

Geisz, J.; Olson, J.; McMahon, W.; Friedman, D.; Kibbler, A.; Kramer, C.; Young, M.; Duda, A.; Ward, S.; Ptak, A.; Kurtz, S.; Wanlass, M.; Ahrenkiel, P.; Jiang, C. S.; Moutinho, H.; Norman, A.; Jones, K.; Romero, M.; Reedy, B.

2005-11-01T23:59:59.000Z

256

Characterization of Thin Films by XAFS: Application to Spintronics Materials  

SciTech Connect

X-ray absorption fine structure (XAFS) has proven very valuable in characterizing thin films. This is illustrated with some examples from the area of diluted magnetic semiconductor (DMS) materials for spintronics applications. A promising route to DMS materials is doping of oxides such as TiO2 and ZnO with magnetic atoms such as Co. These can be grown as epitaxial thin films on various substrates. XAFS is especially valuable for characterizing the dopant atoms. The near edge region is sensitive to the symmetry of the bonding and valence of the dopants, and the extended XAFS can determine the details of the lattice site. XAFS is also valuable for detecting metallic nanoparticles. These can be difficult to detect by other methods, and can give a spurious magnetic signal. The power of XAFS is illustrated by examples from studies on Co doped ZnO films.

Heald, Steve M.; Kaspar, Tiffany C.; Droubay, Timothy; Chambers, Scott A.

2009-10-25T23:59:59.000Z

257

Polycrystalline thin-film technology: Recent progress in photovoltaics  

DOE Green Energy (OSTI)

Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe{sub 2}), cadmium telluride (CdTe), and thin-film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin-film CuInSe{sub 2}, has made some rapid advances in terms of high efficiency and long-term reliability. For CuInSe{sub 2} power modules, a world record has been reported on a 0.4-m{sup 2} module with an aperture-area efficiency of 10.4% and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe{sub 2} modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 cm{sup 2}. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10%; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

1991-12-01T23:59:59.000Z

258

Miniature supercapacitors based on nanocomposite thin films  

Science Conference Proceedings (OSTI)

This paper reports on the development of a miniature supercapacitor for portable applications such as mobile and wearable energy storage. In a primary embodiment, the developed supercapacitor consists of two flexible electrodes fabricated on thin metal ... Keywords: Carbon nanotubes, Energy storage, Nanocomposite, Supercapacitor

L. Jiang, M. Vangari, T. Pryor, Z. Xiao, N. S. Korivi

2013-11-01T23:59:59.000Z

259

Preparation of thin films by ablation with ANACONDA ion beam generator  

Science Conference Proceedings (OSTI)

Thin films of silicon carbide are produced by using the technology of ion beam evaporation. Various analytical methods are used to analyze film thickness, film composition and crystallization for samples obtained with different target-substrate distances.

Yatsui, K.; Jiang, W. [Nagaoka Univ. of Technology (Japan). Lab. of Beam Technology; Davis, H.A.; Olson, J.C.; Waganaar, W.J.; Rej, D. [Los Alamos National Lab., NM (United States)

1996-12-31T23:59:59.000Z

260

Symposium G: Thin Films and Surface Engineering  

Science Conference Proceedings (OSTI)

Aug 3, 2010 ... The incidence of infections caused by the use of bacterial colonized stainless steel has led ... Excellent antibacterial activities (>99%) against both Gram- negative ... that the films could be used as a active layer for switchable mirror. .... beam vapor deposition system (HCEBVD) under various Ar/N2 flow ratio.

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Amorphous silicon-carbon thin films  

DOE Green Energy (OSTI)

This study has shown that it is possible to produce nearly stoichiometric films of a-SiC:H with high hydrogen content by rf sputtering in an atmosphere of argon, propane, and hydrogen. The a-SiC films adhere to a variety of substrates and exhibit better thermal stability than a-Si:H films. The index of refraction is 2.8. The optical gap energy of these films is between 2.0 and 2.2 eV. A series of isochronal annealing steps show that optical gap energies decrease, optical absorption edge widths increase, and that the minimum optical density in the low absorption region increases with annealing above 450/sup 0/C. Infrared measurements show large absorptions at 2100, 1000, 750, and 650 cm/sup -1/ corresponding to SiH stretch, CH wagging, SiC stretch, and SiH wagging vibrational modes. The CH/sub n/ stretch mode near 2900 cm/sup -1/ is very small. Isochronal annealing causes a nearly continuous decrease in the integrated intensity of the SiH stretch mode at 2100 cm/sup -1/. The 2100 absorption peak shape may indicate the presence of SiH/sub 2/ in the film. Comparison of the 2100 and 750 absorption peaks show that the Si-C bonds are more heat resistant than the Si-H bonds. Annealing experiments reveal that the decrease in optical gap energy with increasing annealing temperature is probably not due to change in the Si-H bonds. Rather, the decrease is most likely due to changes or breaks in the C-H bonds and possibly the Si-C bonds. NMR results show that the films have high hydrogen concentrations. Also, NMR results and the integrated intensity for the SiH stretch mode give correct order of magnitude determination of the number and concentration of Si-H bonds in the a-SiC:H films.

Ward, J.F.

1983-09-01T23:59:59.000Z

262

Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application  

DOE Patents (OSTI)

A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

Hawkins, G.A.; Clarke, J.

1975-10-31T23:59:59.000Z

263

Institute of Photo Electronic Thin Film Devices and Technology of Nankai  

Open Energy Info (EERE)

Electronic Thin Film Devices and Technology of Nankai Electronic Thin Film Devices and Technology of Nankai University Jump to: navigation, search Name Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University Place Tianjin Municipality, China Zip 300071 Sector Solar Product A thin-film solar cell research institute in China. References Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University is a company located in Tianjin Municipality, China . References ↑ "Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University"

264

High quality transparent conducting oxide thin films  

Science Conference Proceedings (OSTI)

A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

Gessert, Timothy A. (Conifer, CO); Duenow, Joel N. (Golden, CO); Barnes, Teresa (Evergreen, CO); Coutts, Timothy J. (Golden, CO)

2012-08-28T23:59:59.000Z

265

Method for bonding thin film thermocouples to ceramics  

DOE Patents (OSTI)

A method is provided for adhering a thin film metal thermocouple to a ceramic substrate used in an environment up to 700 degrees Centigrade, such as at a cylinder of an internal combustion engine. The method includes the steps of: depositing a thin layer of a reactive metal on a clean ceramic substrate; and depositing thin layers of platinum and a platinum-10% rhodium alloy forming the respective legs of the thermocouple on the reactive metal layer. The reactive metal layer serves as a bond coat between the thin noble metal thermocouple layers and the ceramic substrate. The thin layers of noble metal are in the range of 1-4 micrometers thick. Preferably, the ceramic substrate is selected from the group consisting of alumina and partially stabilized zirconia. Preferably, the thin layer of reactive metal is in the range of 0.015-0.030 micrometers (15-30 nanometers) thick. The preferred reactive metal is chromium. Other reactive metals may be titanium or zirconium. The thin layer of reactive metal may be deposited by sputtering in ultra high purity argon in a vacuum of approximately 2 milliTorr (0.3 Pascals).

Kreider, Kenneth G. (Potomac, MD)

1993-01-01T23:59:59.000Z

266

Thin film transistors and solar cells. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search  

Science Conference Proceedings (OSTI)

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 250 citations and includes a subject term index and title list.)

NONE

1995-01-01T23:59:59.000Z

267

Thin film transistors and solar cells. (Latest citations from the US Patent Bibliographic File with Exemplary Claims). Published Search  

SciTech Connect

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 250 citations and includes a subject term index and title list.)

Not Available

1993-11-01T23:59:59.000Z

268

Processing and Gas Barrier Behavior of Multilayer Thin Nanocomposite Films  

E-Print Network (OSTI)

Thin films with the ability to impart oxygen and other types of gas barrier are crucial to commercial packaging applications. Commodity polymers, such as polyethylene (PE), polycarbonate (PC) and polyethylene terephthalate (PET), have insufficient barrier for goods requiring long shelf life. Current gas barrier technologies like plasma-enhanced vapor deposition (PECVD) often create high barrier metal oxide films, which are prone to cracking when flexed. Bulk composites composed of polymer and impermeable nanoparticles show improved barrier, but particle aggregation limits their practical utility for applications requiring high barrier and transparency. Layer-by-layer (LbL) assemblies allow polymers and nanoparticles to be mixed with high particle loadings, creating super gas barrier thin films on substrates normally exhibiting high gas permeability. Branched polyethylenimine (PEI) and poly (acrylic acid) (PAA) were deposited using LbL to create gas barrier films with varying pH combinations. Film thickness and mass fraction of each component was controlled by their combined charge. With lower charge density (PEI at pH 10 and PAA at pH 4), PEI/PAA assemblies exhibit the best oxygen barrier relative to other pH combinations. An 8 BL PEI/PAA film, with a thickness of 451 nm, has an oxygen permeability lower than 4.8 x 10^-21 cm^3 * cm/cm^2 * s * Pa, which is comparable to a 100 nm SiOx nanocoating. Crosslinking these films with glutaraldehyde (GA), 1-[3-(dimethylamino)propyl]-3-ethylcarbodiimide methiodide (EDC) or heating forms covalent bonds between PEI and/or PAA. Oxygen transmission rates (OTR) of 8 BL films crosslinked with 0.1M GA or 0.01M EDC show the best oxygen barrier at 100% RH. Graphene oxide (GO) sheets and PEI were deposited via LbL with varying GO concentration. The resulting thin films have an average bilayer thickness from 4.3 to 5.0 nm and a GO mass fraction from 88 to 91wt%. Transmission electron microscopy and atomic force microscopy images reveal a highly-oriented nanobrick wall structure. A 10 BL PEI/GO film that is 91 nm thick, made with a 0.2 wt% GO suspension, exhibits an oxygen permeability of 2.5 x 10^-20 cm^3 * cm/cm^2 * s * Pa. Finally, the influence of deposition time on thin film assembly was examined by depositing montmorillonite (MMT) or laponite (LAP) clays paired with PEI. Film growth and microstructure suggests that smaller aspect ratio LAP clay is more dip-time dependent than MMT and larger aspect ratio MMT has better oxygen barrier. A 30 BL PEI/MMT film made with 10 second dips in PEI has the same undetectable OTR as a film with 5 minute dips (with dips in MMT held at 5 minutes in both cases), indicating LbL gas barrier can be made more quickly than initially thought. These high barrier recipes, with simple and efficient processing conditions, are good candidates for a variety of packaging applications.

Yang, You-Hao

2012-08-01T23:59:59.000Z

269

Thin-Film Reliability Trends Toward Improved Stability  

Science Conference Proceedings (OSTI)

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (R{sub d}) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2 {+-} 0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-01-01T23:59:59.000Z

270

Organic thin film prehistory: looking towards solution phase aggregation |  

NLE Websites -- All DOE Office Websites (Extended Search)

Organic thin film prehistory: looking towards solution phase aggregation Organic thin film prehistory: looking towards solution phase aggregation Wednesday, November 6, 2013 - 3:00pm SLAC, Redtail Hawk Conference Room 108A Christopher Tassone, SSRL Polymer bulk heterojunction (BHJ) solar cells have attracted significant attention in industry and academia because of their potential for achieving large-area, light-weight, and flexible photovoltaic devices through cost-effective solution deposition techniques. These devices consist of a blend of an absorbing polymer and an electron accepting fullerene, the molecular packing and phase segregation of which heavily influence power conversion efficiency by effecting important processes such as exciton splitting, charge transport, and recombination. Understanding and utilization of molecular interactions to predicatively control the

271

Engineering Thin-Film Oxide Interfaces | Advanced Photon Source  

NLE Websites -- All DOE Office Websites (Extended Search)

Novel Materials Become Multifunctional at the Ultimate Quantum Limit Novel Materials Become Multifunctional at the Ultimate Quantum Limit Outsmarting Flu Viruses How Lead-Free Solder (Mis)Behaves under Stress Dynamics of Polymer Chains Atop Different Materials Priming the Pump in the Fight against Drug-Resistant Tuberculosis Science Highlights Archives: 2013 | 2012 | 2011 | 2010 2009 | 2008 | 2007 | 2006 2005 | 2004 | 2003 | 2002 2001 | 2000 | 1998 | Subscribe to APS Science Highlights rss feed Engineering Thin-Film Oxide Interfaces NOVEMBER 12, 2012 Bookmark and Share LAO thin films on STO substrates are depicted in the top schematics (LAO indicated by blue spheres, STO by green spheres). The top left-hand panel demonstrates a chemically broad interface resulting from conventional growth in a low pressure oxygen environment. In contrast, the top

272

NREL: Energy Analysis - Crystalline Silicon and Thin Film Photovoltaic  

NLE Websites -- All DOE Office Websites (Extended Search)

Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Assessment Harmonization Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics (Fact Sheet) Cover of the Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics factsheet Download the Fact Sheet Over the last 30 years, hundreds of life cycle assessments (LCAs) have been conducted and published for a variety of residential and utility-scale solar photovoltaic (PV) systems with wide-ranging results. The inconsistencies in these results can be attributed to the technologies evaluated-such as differing system designs, real-world versus conceptual systems, or technology improvements over time-and life cycle assessment methods and assumptions. To better understand greenhouse gas (GHG) emissions from commercial

273

Method for formation of thin film transistors on plastic substrates  

DOE Patents (OSTI)

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

1998-10-06T23:59:59.000Z

274

Status of High Performance PV: Polycrystalline Thin-Film Tandems  

DOE Green Energy (OSTI)

The High-Performance Photovoltaic (HiPerf PV) Project was initiated by the U.S. Department of Energy to substantially increase the viability of photovoltaics (PV) for cost-competitive applications so that PV can contribute significantly to our energy supply and our environment. The HiPerf PV Project aims at exploring the ultimate performance limits of existing PV technologies, approximately doubling their sunlight-to-electricity conversion efficiencies during its course. This work includes bringing thin-film cells and modules toward 25% and 20% efficiencies, respectively, and developing multijunction concentrator cells and modules able to convert more than one-third of the sun's energy to electricity (i.e., 33% efficiency). This paper will address recent accomplishments of the NREL in-house research effort involving polycrystalline thin-film tandems, as well as the research efforts under way in the subcontracted area.

Symko-Davies, M.

2005-02-01T23:59:59.000Z

275

Thin film battery and method for making same  

DOE Patents (OSTI)

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode. Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between [minus]15 C and 150 C. 9 figs.

Bates, J.B.; Dudney, N.J.; Gruzalski, G.R.; Luck, C.F.

1994-08-16T23:59:59.000Z

276

Thin-Film Reliability Trends Toward Improved Stability: Preprint  

DOE Green Energy (OSTI)

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (Rd) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2+/-0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-07-01T23:59:59.000Z

277

Eddy Current Testing for Detecting Small Defects in Thin Films  

SciTech Connect

Presented here is a technique of using Eddy Current based Giant Magneto-Resistance sensor (GMR) to detect surface and sub-layered minute defects in thin films. For surface crack detection, a measurement was performed on a copper metallization of 5-10 microns thick. It was done by scanning the GMR sensor on the surface of the wafer that had two scratches of 0.2 mm, and 2.5 mm in length respectively. In another experiment, metal coatings were deposited over the layers containing five defects with known lengths such that the defects were invisible from the surface. The limit of detection (resolution), in terms of defect size, of the GMR high-resolution Eddy Current probe was studied using this sample. Applications of Eddy Current testing include detecting defects in thin film metallic layers, and quality control of metallization layers on silicon wafers for integrated circuits manufacturing.

Obeid, Simon; Tranjan, Farid M. [Electrical and Computer Engineering Department, UNCC (United States); Dogaru, Teodor [Albany Instruments, 426-O Barton Creek, Charlotte, NC 28262 (United States)

2007-03-21T23:59:59.000Z

278

Thin film battery and method for making same  

SciTech Connect

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

Bates, John B. (Oak Ridge, TN); Dudney, Nancy J. (Knoxville, TN); Gruzalski, Greg R. (Oak Ridge, TN); Luck, Christopher F. (Knoxville, TN)

1994-01-01T23:59:59.000Z

279

Polycrystalline thin-film module and system performance  

DOE Green Energy (OSTI)

The Module and System Performance and Engineering Project at the National Renewable Energy Laboratory (NREL) conducts in-situ technical evaluations of photovoltaic (PV) modules and systems (arrays). These evaluations on module/array performance and stability are conducted at the NREL Photovoltaic Outdoor Test Facility (OTF) in Golden, CO. The modules and arrays are located at 39.7{degree}N latitude, 105.2{degree}W longitude, and at 1,782 meters elevation. Currently, two polycrystalline thin-film technologies are the focus of the research presented here. The module structures are copper indium diselenide (CIS) from Siemens Solar Industries and cadmium telluride (CdTe) from Solar Cells, Inc. The research team is attempting to correlate individual module performance with array performance for these two polycrystalline thin-film technologies. This is done by looking at module and array performance over time. Also, temperature coefficients are determined at both the module and array level. Results are discussed.

Strand, T.; Kroposki, B.; Hansen, R.; Mrig, L.

1995-11-01T23:59:59.000Z

280

Epitaxial growth of Dy2O3 thin films on epitaxial Dy-germanide films on Ge(001) substrates  

Science Conference Proceedings (OSTI)

Ultra-thin films of Dy are grown on Ge(001) substrates by molecular beam deposition near room temperature and immediately annealed for solid phase epitaxy at higher temperatures, leading to the formation of DyGe"x films. Thin films of Dy"2O"3 are grown ... Keywords: Dy2O3 film, Ge(001) substrate, High-? oxide, Molecular beam epitaxy (MBE), Structural characterization, Transmission electron microscopy (TEM)

Md. Nurul Kabir Bhuiyan; Mariela Menghini; Jin Won Seo; Jean-Pierre Locquet

2011-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Large area ceramic thin films on plastics: A versatile route via solution processing  

Science Conference Proceedings (OSTI)

A new general route for large area, submicron thick ceramic thin films (crystalline metal oxide thin films) on plastic substrates is presented, where the crystallization of films is guaranteed by a firing process. Gel films are deposited on silicon substrates with a release layer and fired to be ceramic films, followed by transferring onto plastic substrates using adhesives. The ceramic films thus fabricated on plastics exhibit a certain degree of flexibility, implying the possibility of the technique to be applied to high-throughput roll-to-roll processes. Using this technique, we successfully realized transparent anatase thin films that provide high optical reflectance and transparent indium tin oxide thin films that exhibit electrical conductivity on polycarbonate and acrylic resin substrates, respectively. Crystallographically oriented zinc oxide films and patterned zinc oxide films are also demonstrated to be realized on acrylic resin substrates.

Kozuka, H.; Yamano, A.; Uchiyama, H.; Takahashi, M. [Faculty of Chemistry, Materials and Bioengineering, Kansai University, 3-3-35 Yamate-cho, Suita, 564-8680 (Japan); Fukui, T.; Yoki, M.; Akase, T. [Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, 564-8680 (Japan)

2012-01-01T23:59:59.000Z

282

Square wells, quantum wells and ultra-thin metallic films  

E-Print Network (OSTI)

The eigenvalue equations for the energy of bound states of a particle in a square well are solved, and the exact solutions are obtained, as power series. Accurate analytical approximate solutions are also given. The application of these results in the physics of quantum wells are discussed,especially for ultra-thin metallic films, but also in the case of resonant cavities, heterojunction lasers, revivals and super-revivals.

Victor Barsan

2013-07-09T23:59:59.000Z

283

Synthesis of thin films and materials utilizing a gaseous catalyst  

Science Conference Proceedings (OSTI)

A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

2013-10-29T23:59:59.000Z

284

Method for making dense crack free thin films  

DOE Patents (OSTI)

The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

Jacobson, Craig P. (Lafayette, CA); Visco, Steven J. (Berkeley, CA); De Jonghe, Lutgard C. (Lafayette, CA)

2007-01-16T23:59:59.000Z

285

Preparation of redox polymer cathodes for thin film rechargeable batteries  

DOE Patents (OSTI)

The present invention relates to the manufacture of thin film solid state electrochemical devices using composite cathodes comprising a redox polymer capable of undergoing oxidation and reduction, a polymer solid electrolyte and conducting carbon. The polymeric cathode material is formed as a composite of radiation crosslinked polymer electrolytes and radiation crosslinked redox polymers based on polysiloxane backbones with attached organosulfur side groups capable of forming sulfur-sulfur bonds during electrochemical oxidation.

Skotheim, T.A.; Lee, H.S.; Okamoto, Yoshiyuki.

1994-11-08T23:59:59.000Z

286

Growth and Characterization of Epitaxial Oxide Thin Films  

E-Print Network (OSTI)

of these morphological changes was found to be dependent on a number of factors including deposition rates, flux and energy of bombarding ions, and the average angle of incidence of Glow Discharge Glow Discharge -V (DC) Cathode (Target) Insulation Substrates Anode Vacuum... techniques such as reflected high energy electron diffraction (RHEED) and low energy electron diffraction (LEED) can give valuable information about the initial growth mechanisms and surface structure of the very thin films during growth in an in-situ manner...

Garg, Ashish

287

Optical sensors and multisensor arrays containing thin film electroluminescent devices  

DOE Patents (OSTI)

Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.

Aylott, Jonathan W. (Ann Arbor, MI); Chen-Esterlit, Zoe (Ann Arbor, MI); Friedl, Jon H. (Ames, IA); Kopelman, Raoul (Ann Arbor, MI); Savvateev, Vadim N. (Ames, IA); Shinar, Joseph (Ames, IA)

2001-12-18T23:59:59.000Z

288

Hysteresis in Thin-Film Rechargeable Lithium Batteries  

SciTech Connect

Discharge - charge cycling of thin-film rechargeable lithium batteries with an amorphous or nanocrystalline LiXMn2.Y04 cathode reveals evidence for a true hysteresis in the lithium insertion reaction. This is compared with an apparent hysteresis attributed to a kinetically hindered phase transition near 3 V for batteries with either a crystalline or a nanocrystalline LiJ@Yo4 cathode.

Bates, J.B.; Dudney, N.J.; Evans, C.D.; Hart, F.X.

1999-04-25T23:59:59.000Z

289

Formation of thin-film resistors on silicon substrates  

DOE Patents (OSTI)

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

1988-11-01T23:59:59.000Z

290

Capillary Wave Dynamics of Thin Polymer Films over Submerged Nanostructures  

Science Conference Proceedings (OSTI)

The surface dynamics of thin molten polystyrene films supported by nanoscale periodic silicon line-space gratings were investigated with x-ray photon correlation spectroscopy. Surface dynamics over these nanostructures exhibit high directional anisotropy above certain length scales, as compared to surface dynamics over flat substrates. A cutoff length scale in the dynamics perpendicular to the grooves is observed. This marks a transition from standard over-damped capillary wave behavior to suppressed dynamics due to substrate interactions.

Alvine, Kyle J.; Dai, Yeling; Ro, Hyun W.; Narayanan, Suresh; Sandy, Alec; Soles, Christopher L.; Shpyrko, Oleg G.

2012-11-13T23:59:59.000Z

291

Evaluation of crystallinity and film stress in yttria-stabilized zirconia thin films  

Science Conference Proceedings (OSTI)

Yttria (3 mol %)-stabilized zirconia (YSZ) thin films were deposited using radio frequency (rf) magnetron sputtering. The YSZ thin films were deposited over a range of temperatures (22-300 deg. C), pressures (5-25 mTorr), and gas compositions (Ar/O ratio). Initial studies characterized a select set of properties in relation to deposition parameters including: refractive index, structure, and film stress. X-ray diffraction (XRD) showed that the films are comprised of mainly monoclinic and tetragonal crystal phases. The film refractive index determined by prism coupling, depends strongly on deposition conditions and ranged from 1.959 to 2.223. Wafer bow measurements indicate that the sputtered YSZ films can have initial stress ranging from 86 MPa tensile to 192 MPa compressive, depending on the deposition parameters. Exposure to ambient conditions (25 deg. C, 75% relative humidity) led to large increase ({approx}100 MPa) in the compressive stress of the films. Environmental aging suggests the change in compressive stress was related to water vapor absorption. These effects were then evaluated for films formed under different deposition parameters with varying density (calculated packing density) and crystal structure (XRD)

Piascik, Jeffrey R.; Thompson, Jeffrey Y.; Bower, Christopher A.; Stoner, Brian R. [Curriculum of Applied and Material Science, University of North Carolina, Chapel Hill, North Carolina 27599 and RTI International, Center for Materials and Electronic Technologies, Research Triangle Park, North Carolina 27709 (United States); Curriculum of Applied and Material Science, and School of Dentistry, University of North Carolina, Chapel Hill, North Carolina 27599 (United States); RTI International, Center for Materials and Electronic Technologies, Research Triangle Park, North Carolina 27709 (United States); RTI International, Center for Materials and Electronic Technologies, Research Triangle Park, North Carolina, 27709 and Curriculum of Applied and Material Science, University of North Carolina, Chapel Hill, North Carolina 27599 (United States)

2005-09-15T23:59:59.000Z

292

Using Thin Films to Screen Possible Scintillator Materials  

SciTech Connect

The discovery and optimization of new scintillators has traditionally been a rather slow process due to the difficulties of single crystal growth. This paper discusses the production of polycrystalline scintillator thin films (a few microns thick) which were tested in order to determine what characterizations could be made concerning a material’s ultimate potential as a scintillator prior to pursuing crystal growth. Thin films of CaF2(Eu), CeF3, and CeCl3, all known scintillators, were produced by vapor deposition. The hygroscopic CeCl3 was coated with multiple polymer-aluminum oxide bi-layers. Emission spectra peak wavelengths and decay times agreed with single crystal values. The films were too thin to measure gamma photopeaks, but using alpha energy deposition peaks, one could compare the relative photon yield/MeV between materials. The values obtained appear to give a relevant indication of a material’s light yield potential. The technique also appears useful for quickly determining the proper dopant amount for a given material.

Milbrath, Brian D.; Caggiano, Joseph A.; Engelhard, Mark H.; Joly, Alan G.; Matson, Dean W.; Nachimuthu, Ponnusamy; Olsen, Larry C.

2009-06-30T23:59:59.000Z

293

Supercritical fluid molecular spray thin films and fine powders  

DOE Patents (OSTI)

Solid films are deposited, or fine powders formed, by dissolving a solid material into a supercritical fluid solution at an elevated pressure and then rapidly expanding the solution through a short orifice into a region of relatively low pressure. This produces a molecular spray which is directed against a substrate to deposit a solid thin film thereon, or discharged into a collection chamber to collect a fine powder. The solvent is vaporized and pumped away. Solution pressure is varied to determine, together with flow rate, the rate of deposition and to control in part whether a film or powder is produced and the granularity of each. Solution temperature is varied in relation to formation of a two-phase system during expansion to control porosity of the film or powder. A wide variety of film textures and powder shapes are produced of both organic and inorganic compounds. Films are produced with regular textural feature dimensions of 1.0-2.0 .mu.m down to a range of 0.01 to 0.1 .mu.m. Powders are formed in very narrow size distributions, with average sizes in the range of 0.02 to 5 .mu.m.

Smith, Richard D. (Richland, WA)

1988-01-01T23:59:59.000Z

294

Sputter deposition for multi-component thin films  

DOE Patents (OSTI)

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

Krauss, Alan R. (Plainfield, IL); Auciello, Orlando (Cary, NC)

1990-01-01T23:59:59.000Z

295

Amorphous carbon thin films for optoelectric device application  

Science Conference Proceedings (OSTI)

Thin films of amorphous carbon (a-C and a-C:H) have been deposited using different carbon precursor materials such as camphor--a natural source, graphite and CH{sub 4}/H{sub 2} mixture by different deposition methods, such as ion beam sputtering, pyrolysis, pulsed laser deposition and r.f. plasma CVD. The films are subjected to various standard characterization techniques in order to tailor the required structural and opto-electrical properties for device applications. The effects of deposition parameters and annealing temperatures on the properties of carbon thin films have been investigated. Both p- and n- type of carbon films have been obtained either through controlling the deposition parameters of a particular method or by doping. Solar cells of various configurations, such as n-C/p-Si, p-C/n-Si and n-C/p-C/p-Si, have been fabricated and their photoresponse characteristics are studied. An efficiency of 1.52% has been obtained, so far, for the cell of configuration n-C/p-C/p-Si. Effects of substrate temperature on the photovoltaic properties are also outlined in brief.

Soga, T.; Jimbo, T.; Krishna, K.M.; Umeno, M.

2000-01-30T23:59:59.000Z

296

Study of lithium diffusion in RF sputtered Nickel/Vanadium mixed oxides thin films  

E-Print Network (OSTI)

Study of lithium diffusion in RF sputtered NickelÁ/Vanadium mixed oxides thin films F. Artuso a lithium insertion inside RF sputtered Ni/V mixed oxides thin films have been investigated employing, showed three steps clearly involved in the intercalation mechanism of lithium in the oxide films: (i

Artuso, Florinda

297

Thin films by metal-organic precursor plasma spray  

Science Conference Proceedings (OSTI)

While most plasma spray routes to coatings utilize solids as the precursor feedstock, metal-organic precursor plasma spray (MOPPS) is an area that the authors have investigated recently as a novel route to thin film materials. Very thin films are possible via MOPPS and the technology offers the possibility of forming graded structures by metering the liquid feed. The current work employs metal-organic compounds that are liquids at standard temperature-pressure conditions. In addition, these complexes contain chemical functionality that allows straightforward thermolytic transformation to targeted phases of interest. Toward that end, aluminum 3,5-heptanedionate (Al(hd){sub 3}), triethylsilane (HSi(C{sub 2}H{sub 5}){sub 3} or HSiEt{sub 3}), and titanium tetrakisdiethylamide (Ti(N(C{sub 2}H{sub 5}){sub 2}){sub 4} or Ti(NEt{sub 2}){sub 4}) were employed as precursors to aluminum oxide, silicon carbide, and titanium nitride, respectively. In all instances, the liquids contain metal-heteroatom bonds envisioned to provide atomic concentrations of the appropriate reagents at the film growth surface, thus promoting phase formation (e.g., Si-C bond in triethylsilane, Ti-N bond in titanium amide, etc.). Films were deposited using a Sulzer Metco TriplexPro-200 plasma spray system under various experimental conditions using design of experiment principles. Film compositions were analyzed by glazing incidence x-ray diffraction and elemental determination by x-ray spectroscopy. MOPPS films from HSiEt{sub 3} showed the formation of SiC phase but Al(hd){sub 3}-derived films were amorphous. The Ti(NEt{sub 2}){sub 4} precursor gave MOPPS films that appear to consist of nanosized splats of TiOCN with spheres of TiO{sub 2} anatase. While all films in this study suffered from poor adhesion, it is anticipated that the use of heated substrates will aid in the formation of dense, adherent films.

Schulz, Douglas L.; Sailer, Robert A.; Payne, Scott; Leach, James; Molz, Ronald J. [North Dakota State University, Fargo, North Dakota 58108-6050 (United States); Sulzer Metco (United States) Inc., Westbury, New York 11590-2724 (United States)

2009-07-15T23:59:59.000Z

298

Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films  

DOE Patents (OSTI)

Sr{sub x}Ba{sub 1{minus}x}Nb{sub 2}O{sub 6}, where x is greater than 0.25 and less than 0.75, and KNbO{sub 3} ferroelectric thin films metalorganic chemical vapor deposited on amorphous or crystalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface are disclosed. Such films can be used in electronic, electro-optic, and frequency doubling components. 8 figs.

Wessels, B.W.; Nystrom, M.J.

1998-05-19T23:59:59.000Z

299

Aging phenomena in PMMA thin films -- memory and rejuvenation effects  

E-Print Network (OSTI)

Aging dynamics in thin films of poly(methyl methacrylate) (PMMA) have been investigated through dielectric measurements for different types of aging processes. The dielectric constant was found to decrease with increasing aging time at an aging temperature in many cases. An increase in the dielectric constant was also observed in the long time region ($\\ge$11h) near the glass transition temperature for thin films with thickness less than 26nm. In the constant rate mode including a temporary stop at a temperature $T_a$, the memory of the aging at $T_a$ was found to be kept and then to be recalled during the subsequent heating process. In the negative temperature cycling process, a strong rejuvenation effect has been observed after the temperature shift from the initial temperature $T_1$ to the second temperature $T_2$($=T_1+\\Delta T$) when $\\Delta T\\approx -20$K. Furthermore, a full memory effect has also been observed for the temperature shift from $T_2$ to $T_1$. This suggests that the aging at $T_1$ is totally independent of that at $T_2$ for $\\Delta T\\approx -20$K. As $|\\Delta T|$ decreases, the independence of the aging between the two temperatures was found to be weaken, $i.e.,$ the effective time, which is a measure of the contribution of the aging at $T_1$ to that at $T_2$, is a decreasing function of $|\\Delta T|$ in the negative region of $\\Delta T$. As the film thickness decreases from 514nm to 26nm, the $|\\Delta T|$ dependence of the effective time was found to become much stronger. The contribution of the aging at $T_2$ to that at $T_1$ disappears more rapidly with increasing $|\\Delta T|$ in thin film geometry than in the bulk state.

Koji Fukao; Aiko Sakamoto

2004-10-23T23:59:59.000Z

300

Sputter deposition and characterization of lithium cobalt oxide thin films and their applications in thin-film rechargeable lithium batteries  

DOE Green Energy (OSTI)

Li Co oxide thin films were deposited by rf magnetron sputtering of a LiCoO{sub 2} target in a 3:1 Ar/O{sub 2} mixture gas. From proton-induced gamma-ray emission analysis and Rutherford backscattering spectrometry, the average composition of these films was determined to be Li{sub 1.15}CoO{sub 2.16}. X-ray powder diffraction patterns of films annealed in air at 500-700 C were consistent with regular rhombohedral structure of crystalline LiCoO{sub 2}. Discharge curves of thin film lithium cells with amoprohous LiCoO{sub 2} showed no obvious structural transition between 4.2 and 1.5 V. Shape of discharge curves of cells with polycrystalline cathodes were consistent with a two-phase voltage plateau at {similar_to}3.9 V with a relatively large capacity and two additional smaller plateaus at higher voltages. Cells with the 700 C annealed cathodes showed a capacity loss of {similar_to} after 1000 cycles between 4.2 and 3.0 V.

Wang, B.; Bates, J.B.; Luck, C.F.; Sales, B.C.; Zuhr, R.A. [Oak Ridge National Lab., TN (United States); Robertson, J.D. [Kentucky Univ., Lexington, KY (United States). Dept. of Chemistry

1996-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

A large polarization in Ce-modified bismuth ferrite thin films  

Science Conference Proceedings (OSTI)

Bi{sub 0.95}Ce{sub 0.05}FeO{sub 3} (BCFO) thin films were grown on SrRuO{sub 3}/TiO{sub 2}/SiO{sub 2}/Si(100) substrates via radio frequency sputtering. The BCFO thin film has a (111) orientation with a high phase purity. Improved dielectric behavior is observed for the BCFO thin film as compared with that of pure bismuth ferrite thin film. A large remanent polarization of 2P{sub r} {approx} 183.9 {mu}C/cm{sup 2} is induced in the BCFO thin film, owing to the (111) orientation and the introduction of Ce. The local phase decomposition induced by larger depolarization fields and the oxygen vacancies dominates the fatigue resistance of the BCFO thin film.

Wang Yuanyu [College of Materials Science and Metallurgy Engineering, Guizhou University, Guiyang 550003 (China)

2011-06-15T23:59:59.000Z

302

Solar Thin Films Inc formerly American United Global Inc | Open Energy  

Open Energy Info (EERE)

Films Inc formerly American United Global Inc Films Inc formerly American United Global Inc Jump to: navigation, search Name Solar Thin Films Inc (formerly American United Global Inc) Place New York, New York Zip 10038 Sector Solar Product A US-based solar manufacturing equipment supplier. References Solar Thin Films Inc (formerly American United Global Inc)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Thin Films Inc (formerly American United Global Inc) is a company located in New York, New York . References ↑ "Solar Thin Films Inc (formerly American United Global Inc)" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Thin_Films_Inc_formerly_American_United_Global_Inc&oldid=351338

303

Microwave plasma assisted supersonic gas jet deposition of thin film materials  

DOE Patents (OSTI)

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

Schmitt, J.J. III; Halpern, B.L.

1993-10-26T23:59:59.000Z

304

Deployable telescope having a thin-film mirror and metering structure  

Science Conference Proceedings (OSTI)

A deployable thin-film mirror telescope comprises a base structure and a metering structure. The base structure houses a thin-film mirror, which can be rolled for stowage and unrolled for deployment. The metering structure is coupled to the base structure and can be folded for stowage and unfolded for deployment. In the deployed state, the unrolled thin-film mirror forms a primary minor for the telescope and the unfolded metering structure positions a secondary minor for the telescope.

Krumel, Leslie J. (Cedar Crest, NM); Martin, Jeffrey W. (Albuquerque, NM)

2010-08-24T23:59:59.000Z

305

Effect of Heat Treatment on Cyclic Fatigue Properties of Thin Films of ...  

Science Conference Proceedings (OSTI)

Abstract Scope, Mobile devices, such as cellphones, notebook and tablet computers, have become daily necessities. Small switches made from thin films of ...

306

The Effects of Interfaces on the Ultrafast Irradiation of Thin Films  

Science Conference Proceedings (OSTI)

Presentation Title, The Effects of Interfaces on the Ultrafast Irradiation of Thin Films ... Abstract Scope, The ultrafast laser irradiation of bulk materials is a ...

307

Effects of Different Precursor's Concentration on the Properties of Zinc Oxide Thin Films  

Science Conference Proceedings (OSTI)

Zinc oxide (ZnO) thin films were successfully grown on silicon substrate with different molarities, by a sol-gel method. In the process, the molarities were varied from 0.2-1.0 M and it was found that increasing in molarities had affected the structure of ZnO thin films. The properties of the thin films were characterized and studied by ultraviolet-visible spectroscopy (UV-Vis) and photoluminescence spectrometer (PL). It was found that the molarities affect the optical properties of the resultant ZnO thin films.

Malek, M. F.; Zakaria, N.; Sahdan, M. Z.; Mamat, M. H. [Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Khusaimi, Z. [NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Rusop, M. [Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)

2010-07-07T23:59:59.000Z

308

Electrochemical kinetics of thin film vanadium pentoxide cathodes for lithium batteries  

E-Print Network (OSTI)

Electrochemical experiments were performed to investigate the processing-property-performance relations of thin film vanadium pentoxide cathodes used in lithium batteries. Variations in microstructures were achieved via ...

Mui, Simon C., 1976-

2005-01-01T23:59:59.000Z

309

Thin-Film Fiber Optic Sensors for Power Control and Fault Detection. Final Report  

Science Conference Proceedings (OSTI)

Described is the development of an optical current measurement device, an active power conditioning system, and sol gel type thin films for the detection of magnetic fields.

Duncan, Paul Grems

2003-09-30T23:59:59.000Z

310

Highly Transparent and Conducting ALD of Doped ZnO Thin Films ...  

Science Conference Proceedings (OSTI)

... and Conducting ALD of Doped ZnO Thin Films for TCO Applications · Hybrid Aerogel/Nanorod Functional Materials for Energy and Sensing Applications.

311

Stress Management: X-Rays Reveal Si Thin-Film Defects  

Science Conference Proceedings (OSTI)

Stress Management: X-Rays Reveal Si Thin-Film Defects. ... Advanced Photon Source, and supported in part by the Department of Energy. ...

2011-04-26T23:59:59.000Z

312

Design Method for Light Absorption Enhancement in Ultra-Thin Film ...  

Science Conference Proceedings (OSTI)

ultra-thin film organic solar cells (OSCs) to improve the light absorption. ... In the promising field of solar cells, organic solar cells (OSCs) are advantageous in its ...

313

Polycrystalline Thin Film Photovoltaics: From the Laboratory to Solar Fields; Preprint  

DOE Green Energy (OSTI)

We review the status of commercial polycrystalline thin-film solar cells and photovoltaic (PV) modules, including current and projected commercialization activities.

von Roedern, B.; Ullal, H. S.; Zweibel, K.

2006-05-01T23:59:59.000Z

314

Minutes of the 2007 Spring Meeting TMS Thin Films and Interfaces ...  

Science Conference Proceedings (OSTI)

Minutes of the 2007 Spring Meeting. TMS Thin Films and Interfaces Committee. Orlando, FL. February 25, 2007. 3:00-4:00 pm. Present: DP Field (Washington ...

315

N-1: Use of Nanostructured Sn Thin Film Anodes for Lithium Ion ...  

Science Conference Proceedings (OSTI)

XRD analyses proved that the thin film was made of nano crystalline Sn particles. The galvanostatic charge discharge results showed that the nano porous Sn ...

316

The Role of Line Defects on the Conductivity of Thin-film Yttria ...  

Science Conference Proceedings (OSTI)

Presentation Title, The Role of Line Defects on the Conductivity of Thin-film Yttria- stabilized Zirconia. Author(s), Edmund Mills, Nigel Browning, Yayoi Takamura, ...

317

Titanium Oxides Thin Film Anodes for All-Solid-State Lithium Ion ...  

Science Conference Proceedings (OSTI)

Metallic lithium is not a suitable anode material for all-solid-state thin film batteries ... Application of Biomass Waste Materials in the Nano Mineral Synthesis.

318

Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells  

E-Print Network (OSTI)

Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc- Si) triple-junction solar cell due to its higher optical investigations of nc-SiGe:H thin films made by hot-wire chemical vapor deposition (HWCVD) with a coil

Deng, Xunming

319

Apparatus and method for the determination of grain size in thin films  

DOE Patents (OSTI)

A method for the determination of grain size in a thin film sample comprising the steps of measuring first and second changes in the optical response of the thin film, comparing the first and second changes to find the attenuation of a propagating disturbance in the film and associating the attenuation of the disturbance to the grain size of the film. The second change in optical response is time delayed from the first change in optical response.

Maris, Humphrey J (Barrington, RI)

2000-01-01T23:59:59.000Z

320

Apparatus and method for the determination of grain size in thin films  

DOE Patents (OSTI)

A method for the determination of grain size in a thin film sample comprising the steps of measuring first and second changes in the optical response of the thin film, comparing the first and second changes to find the attenuation of a propagating disturbance in the film and associating the attenuation of the disturbance to the grain size of the film. The second change in optical response is time delayed from the first change in optical response.

Maris, Humphrey J (Barrington, RI)

2001-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Dynamics of gravity driven three-dimensional thin films on hydrophilic-hydrophobic patterned substrates  

E-Print Network (OSTI)

We investigate numerically the dynamics of unstable gravity driven three-dimensional thin liquid films on hydrophilic-hydrophobic patterned substrates of longitudinal stripes and checkerboard arrangements. The thin film can be guided preferentially on hydrophilic longitudinal stripes, while fingers develop on adjacent hydrophobic stripes if their width is large enough. On checkerboard patterns, the film fingering occurs on hydrophobic domains, while lateral spreading is favoured on hydrophilic domains, providing a mechanism to tune the growth rate of the film. By means of kinematical arguments, we quantitatively predict the growth rate of the contact line on checkerboard arrangements, providing a first step towards potential techniques that control thin film growth in experimental setups.

Rodrigo Ledesma-Aguilar; Aurora Hernandez-Machado; Ignacio Pagonabarraga

2010-01-20T23:59:59.000Z

322

Formation of thin-film high T/sub c/ superconductors by metalorganic deposition  

Science Conference Proceedings (OSTI)

Metalorganic deposition (MOD) is a nonvacuum method of thin-film deposition which allows easy alteration of chemical components and is compatible with thin-film processing. We report the preparation of thin-film superconductors by MOD. Rutherford backscattering spectrometry was used to determine film compositions and thicknesses. Films, approximately 500 nm thick, of YBa/sub 2/Cu/sub 4/O/sub z/ (z undetermined) were deposited on single-crystal SrTiO/sub 3/. A superconducting onset temperature of 90 K was measured with 37 K the zero resistance temperature. Scanning electron microscopy revealed grain sizes approximately 250 nm in diameter.

Hamdi, A.H.; Mantese, J.V.; Micheli, A.L.; Laugal, R.C.O.; Dungan, D.F.; Zhang, Z.H.; Padmanabhan, K.R.

1987-12-21T23:59:59.000Z

323

Silicon-integrated thin-film structure for electro-optic applications  

DOE Patents (OSTI)

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

McKee, Rodney A. (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

324

Overview and Challenges of Thin Film Solar Electric Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

and Challenges of Thin and Challenges of Thin Film Solar Electric Technologies H.S. Ullal Presented at the World Renewable Energy Congress X and Exhibition 2008 Glasgow, Scotland, United Kingdom July 19-25, 2008 Conference Paper NREL/CP-520-43355 December 2008 NOTICE The submitted manuscript has been offered by an employee of the Alliance for Sustainable Energy, LLC (ASE), a contractor of the US Government under Contract No. DE-AC36-08-GO28308. Accordingly, the US Government and ASE retain a nonexclusive royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for US Government purposes. This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any

325

Investigation of multi-layer thin films for energy storage.  

DOE Green Energy (OSTI)

We investigate here the feasibility of increasing the energy density of thin-film capacitors by construction of a multi-layer capacitor device through ablation and redeposition of the capacitor materials using a high-power pulsed ion beam. The deposition experiments were conducted on the RHEPP-1 facility at Sandia National Laboratories. The dielectric capacitor filler material was a composition of Lead-Lanthanum-Zirconium-Titanium oxide (PLZT). The energy storage can be increased by using material of intrinsically high dielectric constant, and constructing many thin layers of this material. For successful device construction, there are a number of challenging requirements including correct stoichiometric and crystallographic composition of the deposited PLZT. This report details some success in satisfying these requirements, even though the attempt at device manufacture was unsuccessful. The conclusion that 900 C temperatures are necessary to reconstitute the deposited PLZT has implications for future manufacturing capability.

Renk, Timothy Jerome; Monson, Todd

2009-01-01T23:59:59.000Z

326

90-Degree Bragg Reflection from a Thin Crystalline Film  

SciTech Connect

Experimental observations of synchrotron radiation diffraction from a thin surface layer at a 90-degree Bragg reflection are reported and discussed. The synchrotron experiments were performed using a bending magnet source at the European Synchrotron Radiation Facility (ESRF) in France and undulator sources at the Advanced Photon Source (APS) in the U.S. and SPring-8 in Japan. Thin (0.5, 1.0 and 1.5 micron) InGaAs films deposited on a GaAs (100) substrate were studied near the 90- degree using the GaAs (800) reflection. A slight, less than 0.1%, difference in the lattice spacing between the layer and the substrate is sufficient to allow a direct and exclusive observation of the diffraction profile from a thin layer as if it was a 'free-standing' thin crystal. This research opens new possibilities for x-ray optical schemes and the development of novel analytical techniques for surface/interface x-ray diffraction studies.

Nikulin, A.Y.; Davis, J.R.; Usher, B.F.; Freund, A.K.; Ishikawa, T.

2001-09-11T23:59:59.000Z

327

Stripe Domain-Structures in a Thin Ferromagnetic Film  

E-Print Network (OSTI)

We present a theory of the stripe domain structure in a thin ferromagnetic film with single-ion easy-axis magnetic anisotropy and long-range dipole interactions, for a wide range of temperatures and applied magnetic field. The domains exist at temperatures below the reorientational phase transition from out-of-plane to in-plane magnetization. The system of stripes can be described as a liquid crystal with a preferred domain-wall orientation. The positional order is destroyed by both thermodynamical meandering of domain walls and by the proliferation of dislocations. Spatial anisotropy generated by the fourth-order exchange energy stabilizes the stripe domain structure and pins its orientation. For any temperature below the reorientational phase transition there exists a critical perpendicular-to-plane magnetic field, which separates multidomain and monodomain states of the film. The theory explains recent experimental observations.

KASHUBA, AB; Pokrovsky, Valery L.

1993-01-01T23:59:59.000Z

328

Post-growth surface smoothing of thin films of diindenoperylene  

Science Conference Proceedings (OSTI)

We applied in situ x-ray reflectivity and ultraviolet photoelectron spectroscopy to study the impact of annealing on low temperature (200 K) deposited organic thin films of diindenoperylene (DIP) on SiO{sub 2} and indium tin oxide (ITO). At 200 K, DIP is crystalline on SiO{sub 2} and amorphous on ITO. Upon heating to room temperature, the roughness of DIP is reduced on both substrates, from 1.5 nm to 0.75 nm (SiO{sub 2}) and from 0.90 nm to 0.45 nm (ITO). The smoothing is accompanied by crystallization of the surface molecules, whereas the bulk structure of the films does not strongly reorganize.

Hinderhofer, A. [Institute for Applied Physics, University of Tuebingen, Auf der Morgenstelle 10, Tuebingen 72076 (Germany); Graduate School of Advanced Integration Science, Chiba University,1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Hosokai, T. [Department of Materials and Science, Iwate University, Ueda 4-3-5, Morioka, Iwate 0208551 (Japan); Yonezawa, K.; Kato, K.; Kera, S.; Ueno, N. [Graduate School of Advanced Integration Science, Chiba University,1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Gerlach, A.; Broch, K.; Frank, C.; Schreiber, F. [Institute for Applied Physics, University of Tuebingen, Auf der Morgenstelle 10, Tuebingen 72076 (Germany); Novak, J. [Institute for Applied Physics, University of Tuebingen, Auf der Morgenstelle 10, Tuebingen 72076 (Germany); European Synchrotron Radiation Facility (ESRF), BP 220, Grenoble 38043 (France)

2012-07-16T23:59:59.000Z

329

Epitaxial EuO thin films on GaAs  

SciTech Connect

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57 deg., a significant remanent magnetization, and a Curie temperature of 69 K.

Swartz, A. G.; Ciraldo, J.; Wong, J. J. I.; Li Yan; Han Wei; Lin Tao; Shi, J.; Kawakami, R. K. [Department of Physics and Astronomy, University of California, Riverside, California 92521 (United States); Mack, S.; Awschalom, D. D. [Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106 (United States)

2010-09-13T23:59:59.000Z

330

Thin film solar cell including a spatially modulated intrinsic layer  

SciTech Connect

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

1989-03-28T23:59:59.000Z

331

Thin-film electrochemical power cells. Final report  

SciTech Connect

Fundamental properties of research cells were correlated with the projected performance of full scale power sources, considering both battery and supercapacitor concepts. In addition to establishing the data base for modelling and performance projections, the program had the additional objective of identifying loss mechanisms and degradation reactions, especially those unique to polymer thin film cell designs. Because of the intrinsic high electrode/electrolyte interface areas, interfacial reactions must be understood. Many applications require power under extreme conditions, and low temperature performance needs to be improved.

Owens, B.B.; Smyrl, W.H.

1991-01-01T23:59:59.000Z

332

Thin Film Absorbers Based on Plasmonic Phase Resonances  

E-Print Network (OSTI)

We demonstrate an efficient double-layer light absorber by exciting plasmonic phase resonances. We show that the addition of grooves can cause mode splitting of the plasmonic waveguide cavity modes and all the new resonant modes exhibit large absorptivity greater than 90%. Some of the generated absorption peaks have wide-angle characteristics. Furthermore, we find that the proposed structure is fairly insensitive to the alignment error between different layers. The proposed plasmonic nano-structure designs may have exciting potential applications in thin film solar cells, thermal emitters, novel infrared detectors, and highly sensitive bio-sensors.

Cui, Yanxia; Xu, Jun; He, Sailing; Fang, Nicholas X

2010-01-01T23:59:59.000Z

333

Preparation of thin ceramic films via an aqueous solution route  

DOE Patents (OSTI)

A new chemical method of forming thin ceramic films has been developed. An aqueous solution of metal nitrates or other soluble metal salts and a low molecular weight amino acid is coated onto a substrate and pyrolyzed. The amino acid serves to prevent precipitation of individual solution components, forming a very viscous, glass-like material as excess water is evaporated. Using metal nitrates and glycine, the method has been demonstrated for zirconia with various levels of yttria stabilization, for lanthanum-strontium chromites, and for yttrium-barium-copper oxide superconductors on various substrates.

Pederson, Larry R. (Kennewick, WA); Chick, Lawrence A. (Richland, WA); Exarhos, Gregory J. (Richland, WA)

1989-01-01T23:59:59.000Z

334

Drying radioactive wastewater salts using a thin film dryer  

SciTech Connect

This paper describes the operational experience in drying brines generated at a radioactive wastewater treatment facility. The brines are composed of aqueous ammonium sulfate/sodium sulfate and aqueous sodium nitrate/sodium sulfate, The brine feeds receive pretreatment to preclude dryer bridging and fouling. The dryer products are a distillate and a powder. The dryer is a vertical thin film type consisting of a steam heated cylinder with rotor. Maintenance on the dryer has been minimal. Although many operability problems have had to be overcome, dryer performance can now be said to be highly reliable.

Scully, D.E.

1998-03-19T23:59:59.000Z

335

Thin film superconductors and process for making same  

DOE Patents (OSTI)

A process for the preparation of oxide superconductors from high-viscosity non-aqueous solution is described. Solutions of lanthanide nitrates, alkaline earth nitrates and copper nitrates in a 1:2:3 stoichiometric ratio, when added to ethylene glycol containing citric acid solutions, have been used to prepare highly viscous non-aqueous solutions of metal mixed nitrates-citrates. Thin films of these compositions are produced when a layer of the viscous solution is formed on a substrate and subjected to thermal decomposition.

Nigrey, P.J.

1988-01-21T23:59:59.000Z

336

Hydrogen adsorption in thin films of Prussian blue analogue  

DOE Green Energy (OSTI)

Quartz crystal microbalance with dissipation (QCM-D) measurement was used to investigate the kinetics of the molecular hydrogen adsorption into thin films of prussian blue analogues - Cu{sub 3}[Co(CN){sub 6}]{sub 2} at ambient conditions. Although the equilibrium adsorption seems to be independent of the thickness, the adsorption rate substantially decreases with the thickness of the films. In addition, the reversibility of H{sub 2} adsorption into the Cu{sub 3}[Co(CN){sub 6}]{sub 2} films was investigated. The results indicate that the Cu{sub 3}[Co(CN){sub 6}]{sub 2} maily interacts with H{sub 2} molecules physically. The highest H{sub 2} uptake by the Cu{sub 3}[Co(CN){sub 6}]{sub 2} films is obtained when the gas phase is stagnant inside the testing cell. However, the unusual high H{sub 2} uptake obtained from the QCM-D measurement makes us question how reliable this analytic methodology is.

Yang, Dali [Los Alamos National Laboratory; Ding, Vivian [Los Alamos National Laboratory; Luo, Junhua [Los Alamos National Laboratory; Currier, Robert P [Los Alamos National Laboratory; Obrey, Steve [Los Alamos National Laboratory; Zhao, Yusheng [Los Alamos National Laboratory

2008-01-01T23:59:59.000Z

337

Focused ion beam induced structural modifications in thin magnetic films  

SciTech Connect

Focused ion beam techniques are one way to modify locally the properties of magnetic thin films. We report on structural investigations of 50 nm thick non-ordered nano-crystalline Permalloy (Ni{sub 81}Fe{sub 19}) films modified by 30 keV Ga{sup +} focused ion beam (FIB) irradiation. From the x-ray diffraction (XRD) measurements a considerable crystallite growth and a material texturing towards (111)-direction with a linearly increasing lattice constant was observed. In addition, cross-sectional transmission electron microscope (XTEM) images show that crystallites are growing through the entire film at high irradiation fluences. Extended x-ray absorption fine structure (EXAFS) analysis shows a perfect near-order coordination corresponding to a face-centered (fcc) unit cell for both Fe, Ni and Ga atom surrounding. The structural changes are accompanied by a decrease of saturation polarization with increasing ion fluence. Such a behavior is attributed to the incorporation of non-magnetic Ga atoms in the Permalloy film.

Roshchupkina, O. D.; Grenzer, J.; Strache, T.; McCord, J.; Fritzsche, M.; Muecklich, A.; Baehtz, C.; Fassbender, J. [Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Dresden (Germany)

2012-08-01T23:59:59.000Z

338

Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint  

DOE Green Energy (OSTI)

We report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. In CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.

Ullal, H. S.; von Roedern, B.

2007-09-01T23:59:59.000Z

339

Issue and challenges facing rechargeable thin film lithium batteries  

Science Conference Proceedings (OSTI)

New materials hold the key to fundamental advances in energy conversion and storage, both of which are vital in order to meet the challenge of global warming and the finite nature of fossil fuels. Nanomaterials in particular offer unique properties or combinations of properties as electrodes and electrolytes in a range of energy devices. Technological improvements in rechargeable solid-state batteries are being driven by an ever-increasing demand for portable electronic devices. Lithium batteries are the systems of choice, offering high energy density, flexible, lightweight design and longer lifespan than comparable battery technologies. We present a brief historical review of the development of lithium-based thin film rechargeable batteries highlight ongoing research strategies and discuss the challenges that remain regarding the discovery of nanomaterials as electrolytes and electrodes for lithium batteries also this article describes the possible evolution of lithium technology and evaluates the expected improvements, arising from new materials to cell technology. New active materials under investigation and electrode process improvements may allow an ultimate final energy density of more than 500 Wh/L and 200 Wh/kg, in the next 5-6 years, while maintaining sufficient power densities. A new rechargeable battery technology cannot be foreseen today that surpasses this. This report will provide key performance results for thin film batteries and highlight recent advances in their development.

Patil, Arun; Patil, Vaishali; Shin, Dong Wook; Choi, Ji-Won; Paik, Dong-Soo [Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Yoon, Seok-Jin [Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)], E-mail: sjyoon@kist.re.kr

2008-08-04T23:59:59.000Z

340

Silicon Oxynitride Thin Film Barriers for PV Packaging (Poster)  

DOE Green Energy (OSTI)

Dielectric, adhesion-promoting, moisture barriers comprised of silicon oxynitride thin film materials (SiOxNy with various material stoichiometric compositions x,y) were applied to: 1) bare and pre-coated soda-lime silicate glass (coated with transparent conductive oxide SnO2:F and/or aluminum), and polymer substrates (polyethylene terephthalate, PET, or polyethylene napthalate, PEN); plus 2) pre- deposited photovoltaic (PV) cells and mini-modules consisting of amorphous silicon (a-Si) and copper indium gallium diselenide (CIGS) thin-film PV technologies. We used plasma enhanced chemical vapor deposition (PECVD) process with dilute silane, nitrogen, and nitrous oxide/oxygen gas mixtures in a low-power (< or = 10 milliW per cm2) RF discharge at ~ 0.2 Torr pressure, and low substrate temperatures < or = 100(degrees)C, over deposition areas ~ 1000 cm2. Barrier properties of the resulting PV cells and coated-glass packaging structures were studied with subsequent stressing in damp-heat exposure at 85(degrees)C/85% RH. Preliminary results on PV cells and coated glass indicate the palpable benefits of the barriers in mitigating moisture intrusion and degradation of the underlying structures using SiOxNy coatings with thicknesses in the range of 100-200 nm.

del Cueto, J. A.; Glick, S. H.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

2006-10-03T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Catalyst-infiltrated supporting cathode for thin-film SOFCs  

DOE Green Energy (OSTI)

The fabrication and electrochemical performance of co-fired,LSM-SYSZ [i.e., La0.65Sr0.30MnO3 (LSM) - (Sc2O3)0.1(Y2O3)0.01(ZrO2)0.89] supported thin-film cells were examined using humidified hydrogen as a fuel. Co-firing of bi-layers and tri-layers was successful at 1250 C by optimizing the amount of carbon pore formers. A power density of a factor of 2.5 higher than that recently reported for the same type of cell at 800 C [3] was obtained for a cell with cobalt infiltration into the supporting cathode: the peak power densities were 455, 389, 285, 202, 141mW/cm2 at 800, 750, 700, 650, 600 C, respectively, and in most cases power densities at 0.7V exceeded more than 90 percent of the peak output. Increasing the cathode porosity from 43 to 53 percent improved peak power densities by as much as 1.3, shifting the diffusion limitation to high current densities. Cobalt infiltration into the support improved those by as much as a factor of 2 due to a significant reduction in non-ohmic resistance. These results demonstrate that cobalt catalyst-infiltrated LSM can be effective and low-cost supporting electrodes for reduced temperature, thin film SOFCs.

Yamahara, Keiji; Jacobson, Craig P.; Visco, Steven J.; De Jonghe,Lutgard C.

2004-04-12T23:59:59.000Z

342

Facile synthesis of porous-structured nickel oxide thin film by pulsed laser deposition  

Science Conference Proceedings (OSTI)

Porous-structured nickel oxide (PsNiO) was obtained through the oxidization of a nickel thin film. The nickel thin film was deposited using the pulsed laser deposition (PLD) method on a nickel foil as a substrate. The results show uniform PsNiO after ...

Siamak Pilban Jahromi; Nay Ming Huang; Ahmad Kamalianfar; Hong Ngee Lim; Muhamad Rasat Muhamad; Ramin Yousefi

2012-01-01T23:59:59.000Z

343

Analytical modeling and parameter extraction of top and bottom contact structures of organic thin film transistors  

Science Conference Proceedings (OSTI)

This paper proposes a structure based model of an organic thin film transistor (OTFT) and analyzes its device physics. The analytical model is developed for the top contact structure by mapping the overlap region to the resistance (in the vertical direction) ... Keywords: Analytical modeling, Contact resistance, Organic thin film transistor, Overlap region, Parameter extraction, Top and bottom contact structure, Vertical resistance

Brijesh Kumar, B. K. Kaushik, Y. S. Negi, S. Saxena, G. D. Varma

2013-09-01T23:59:59.000Z

344

Optimization of DC reactive magnetron sputtering deposition process for efficient YSZ electrolyte thin film SOFC  

E-Print Network (OSTI)

thin film SOFC H. Hidalgo1 , A.-L. Thomann1 , T. Lecas1 , J. Vulliet2 , K. Wittmann-Teneze2 , D of 350 mW.cm-2 . Keywords: Anode-Supported SOFC, Thin films, magnetron sputtering, YSZ, electrolyte 1...) into electricity. Among the different technologies [1], solid oxide fuel cells (SOFC) exhibit a high tolerance

345

Thin-film Lithium Niobate Contour-mode Resonators Renyuan Wang and Sunil A. Bhave  

E-Print Network (OSTI)

Thin-film Lithium Niobate Contour-mode Resonators Renyuan Wang and Sunil A. Bhave School Micro Devices, Inc. Greensboro, North Carolina, USA Abstract--This paper presents Lithium Niobate (LN this platform, we demonstrate, on a black Y136 cut Lithium Niobate thin-film, one-port high-order width

Afshari, Ehsan

346

Photopyroelectric thin?film instrumentation and impulse?response detection. Part I: A theoretical model  

Science Conference Proceedings (OSTI)

Thin?film pyroelectric effect detectors provide a simple means of measuring thermal properties of solid samples. The present work reports a time?delay theoreticalmodel of thin?film pyroelectric detection which enables the recovery of thermal diffusivity and thermal conductivity information from the impulse response of the pyroelectric system.

Joan F. Power; Andreas Mandelis

1987-01-01T23:59:59.000Z

347

High Frequency Characteristicsof NanocompositeThin Film "Supercapacitors" and their Suitability For EmbeddedDecoupling  

E-Print Network (OSTI)

High Frequency Characteristicsof NanocompositeThin Film "Supercapacitors" and their Suitability, the capacitance density would be much lower. Newer capacitor concepts such as supercapacitors can overcome and the suitability of the thin film supercapacitors for high-frequency decoupling applications will be discussed. 1

Swaminathan, Madhavan

348

Hard and elastic amorphous carbon nitride thin films studied by 13 C nuclear magnetic  

E-Print Network (OSTI)

Hard and elastic amorphous carbon nitride thin films studied by 13 C nuclear magnetic resonance bonding of hard and elastic amorphous carbon nitride (a-CNx) thin films was examined using solid-state 13 on Si 001 substrates at 300 °C. Nanoindentation tests reveal a recovery of 80%, a hardness of 5 GPa

Reilly, Anne

349

Thin-Film Active Nano-PWAS for Structural Health Monitoring , Victor Giurgiutiu1  

E-Print Network (OSTI)

Thin-Film Active Nano-PWAS for Structural Health Monitoring Bin Lin1 , Victor Giurgiutiu1 , Amar S be fabricated directly to the structural substrate using thin-film nano technologies (e.g., pulsed-laser deposition, sputtering, chemical vapor deposition, etc.) Because these novel PWAS are made up of nano layers

Giurgiutiu, Victor

350

Analysis of defects at the interface between high-k thin films and (100) silicon  

Science Conference Proceedings (OSTI)

Paramagnetic defects in atomic layer deposition grown aluminium oxide thin films have been studied using electron paramagnetic resonance. Initial spectra indicate the presence of Si-db, P"b"0 and P"b"1 defects, previously observed in Si/SiO"2 structures. ... Keywords: Aluminium oxide, Defects, EPR, High-k, Interfaces, Thin films

B. J. Jones; R. C. Barklie

2005-06-01T23:59:59.000Z

351

Fully Integrated Applications of Thin Films on Low Temperature Cofired Ceramic (LTCC)  

SciTech Connect

Thin film multilayers have previously been introduced on multilayer low temperature cofired ceramic (LTCC), as well as initial thin film capacitors on LTCC. The ruggedness of a multipurpose Ti-Cu-Pt-Au stack for connectivity and RF conductivity has continued to benefit fabrication and reliability in state of-the-art modules, while the capacitors have followed the traditional Metal-Insulator-Metal (MIM) style. The full integration of thin film passives with thin film connectivity traces is presented. Certain passives, such as capacitors, require specifically tailored and separately patterned thin film (multi-)layers, including a dielectric. Different capacitance values are achieved by variation of both the insulator layer thickness and the active area of the capacitor. Other passives, such as filters, require only the conductor - a single thin film multilayer. This can be patterned from the same connectivity thin film material (Ti-Cu-Pt-Au), or a specially tailored thin film material (e.g. Ti-Cu-Au) can be deposited. Both versions are described, including process and integration details. Examples are discussed, ranging from patterning for maximum tolerances, to space and performance-optimized designs. Cross-sectional issues associated with integration are also highlighted in the discussion.

Ambrose Wolf; Ken Peterson; Matt O'Keefe; Wayne Huebner; Bill Kuhn

2012-04-19T23:59:59.000Z

352

Amorphous Silicon(a-Si: H) Thin Film Based Omnidirectional Control Solar Powered Vehicle  

Science Conference Proceedings (OSTI)

Through the paper, our goal is to drive a car with the help of thin film based solar cell. Mechanical and Electrical parts are assembled thereby. The main objective of this project is to collect maximum solar energy from the solar spectrum and use that ... Keywords: Thin film Photovoltaic, Single p-i-n Junction, Steering Mechanism, H-Bridge, Gear motor

Abdullah Moinuddin; Md. Jahidul Hoque; Jony C. Sarker; Akhter Zia

2012-03-01T23:59:59.000Z

353

Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices  

SciTech Connect

Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

Nastasi, Michael Anthony; Wang, Yongqiang; Fraboni, Beatrice; Cosseddu, Piero; Bonfiglio, Annalisa

2013-06-11T23:59:59.000Z

354

X-ray microdiffraction: local stress distributions in polycrystalline and epitaxial thin films  

Science Conference Proceedings (OSTI)

When investigated by X-ray microdiffraction, the stress states in thin metal films are found to be more complex than as assumed by the simple models that have been formulated to describe their behavior. In this paper, the local differences in stress ... Keywords: Al, Al-Cu, Cu, microdiffraction, plasticity, size effects, stress measurement, synchrotron, thin films

M. A. Phillips; R. Spolenak; N. Tamura; W. L. Brown; A. A. MacDowell; R. S. Celestre; H. A. Padmore; B. W. Batterman; E. Arzt; J. R. Patel

2004-07-01T23:59:59.000Z

355

Phase transition on CdSe thin films by changing the volume concentration of Se  

Science Conference Proceedings (OSTI)

In this work CdSe thin films were grown by chemical bath deposition (CBD)6 onto glass substrate with approximately 2000 Ć thickness. The samples have been prepared by changing the volume concentration of the solution in the range of 5-45 ... Keywords: CdSe, thin films, chemical bath, phase transitions, semiconductors

M. Rubín; J. I. Cortez; H. Juárez; E. Rosendo; T. Díaz; G. García Salgado; I. Villaverde; R. Lozada-Morales; O. Portillo-Moreno; O. Zelaya-Ngel

2007-07-01T23:59:59.000Z

356

Effect of sputter pressure on stress evolution in Ta thin films during ...  

Science Conference Proceedings (OSTI)

Abstract Scope, Tantalum thin films can be sputtered in two different phases that have ... tantalum thin films using a range of argon sputter gas pressures from 0.3 to 2.2 Pa. ... Load drop and slip step statistics in cast aluminium and magnesium microwires ... Predicting flow curve of dual-phase steels through nanoindentation.

357

Study of a hydrogen-bombardment process for molecular cross-linking within thin films  

SciTech Connect

A low-energy hydrogen bombardment method, without using any chemical additives, has been designed for fine tuning both physical and chemical properties of molecular thin films through selectively cleaving C-H bonds and keeping other bonds intact. In the hydrogen bombardment process, carbon radicals are generated during collisions between C-H bonds and hydrogen molecules carrying {approx}10 eV kinetic energy. These carbon radicals induce cross-linking of neighboring molecular chains. In this work, we focus on the effect of hydrogen bombardment on dotriacontane (C{sub 32}H{sub 66}) thin films as growing on native SiO{sub 2} surfaces. After the hydrogen bombardment, XPS results indirectly explain that cross-linking has occurred among C{sub 32}H{sub 66} molecules, where the major chemical elements have been preserved even though the bombarded thin film is washed by organic solution such as hexane. AFM results show the height of the perpendicular phase in the thin film decreases due to the bombardment. Intriguingly, Young's modulus of the bombarded thin films can be increased up to {approx}6.5 GPa, about five times of elasticity of the virgin films. The surface roughness of the thin films can be kept as smooth as the virgin film surface after thorough bombardment. Therefore, the hydrogen bombardment method shows a great potential in the modification of morphological, mechanical, and tribological properties of organic thin films for a broad range of applications, especially in an aggressive environment.

Liu, Y.; Yang, J. [Department of Mechanical and Materials Engineering, University of Western Ontario, London, Ontario (Canada); Yang, D. Q.; Nie, H.-Y.; Lau, W. M. [Surface Science Western, University of Western Ontario, London, Ontario (Canada)

2011-02-21T23:59:59.000Z

358

Electrochemical Behavior and Li Diffusion Study of LiCoO? Thin Film Electrodes Prepared by PLD  

E-Print Network (OSTI)

Preferred c-axis oriented LiCoO? thin films were prepared on the SiO?/Si (SOS) substrates by pulsed laser deposition (PLD). Thin film electrodes without carbon and binder are ideal samples to study the electrochemical ...

Xia, H.

359

Improved structural and electrical properties of thin ZnO:Al films by dc filtered cathodic arc deposition  

E-Print Network (OSTI)

on the properties of indium tin oxide thin films. J. Appl.optical properties in indium-tin-oxide thin film on glassthe replacement of indium tin oxide (ITO) for applications

Zhu, Yuankun

2013-01-01T23:59:59.000Z

360

High-field magnets using high-critical-temperature superconducting thin films  

DOE Patents (OSTI)

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field.

Mitlitsky, Fred (Livermore, CA); Hoard, Ronald W. (Livermore, CA)

1994-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

High-field magnets using high-critical-temperature superconducting thin films  

DOE Patents (OSTI)

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla are disclosed. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field. 4 figures.

Mitlitsky, F.; Hoard, R.W.

1994-05-10T23:59:59.000Z

362

Functional requirements for component films in a solar thin-film photovoltaic/thermal panel  

SciTech Connect

The functional requirements of the component films of a solar thin-film photovoltaic/thermal panel were considered. Particular emphasis was placed on the new functions, that each layer is required to perform, in addition to their pre-existing functions. The cut-off wavelength of the window layer, required for solar selectivity, can be achieved with charge carrier concentrations typical of photovoltaic devices, and thus does not compromise electrical efficiency. The upper (semiconductor) absorber layer has a sufficiently high thermal conductivity that there is negligible temperature difference across the film, and thus negligible loss in thermal performance. The lower (cermet) absorber layer can be fabricated with a high ceramic content, to maintain high solar selectivity, without significant increase in electrical resistance. A thin layer of molybdenum-based cermet at the top of this layer can provide an Ohmic contact to the upper absorber layer. A layer of aluminium nitride between the metal substrate and the back metal contact can provide electrical isolation to avoid short-circuiting of series-connected cells, while maintaining a thermal path to the metal substrate and heat extraction systems. Potential problems of differential contraction of heated films and substrates were identified, with a recommendation that fabrication processes, which avoid heating, are preferable. (author)

Johnston, David [Power and Energy Research Group, School of Engineering, Northumbria University, Ellison Place, Newcastle upon Tyne NE1 8ST (United Kingdom)

2010-03-15T23:59:59.000Z

363

Thin film transistors and solar cells. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search  

SciTech Connect

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

NONE

1996-04-01T23:59:59.000Z

364

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network (OSTI)

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells thin film work. The most pressing current need is to determine how to extend cell life, particularly

Paris-Sud XI, Université de

365

Development of a Thin Film Sensor for Detecting Initiation of Stress Corrosion Cracks in Stainless Steels  

Science Conference Proceedings (OSTI)

The study of initiation of intergranular stress corrosion cracking (IGSCC) has been hindered by lack of techniques to detect small cracks ranging in depth from sub-micron to several microns. The present investigation's main objective is to develop a thin film sample suitable for detecting and studying initiation of IGSCC in sensitized austenitic stainless steel. Two approaches are being investigated to produce thin films of stainless steel: pulse laser deposition (PLD) of ultrathin films (20-150 nm) usin...

2002-12-11T23:59:59.000Z

366

Finite-element analysis of the deformation of thin Mylar films due to measurement forces.  

Science Conference Proceedings (OSTI)

Significant deformation of thin films occurs when measuring thickness by mechanical means. This source of measurement error can lead to underestimating film thickness if proper corrections are not made. Analytical solutions exist for Hertzian contact deformation, but these solutions assume relatively large geometries. If the film being measured is thin, the analytical Hertzian assumptions are not appropriate. ANSYS is used to model the contact deformation of a 48 gauge Mylar film under bearing load, supported by a stiffer material. Simulation results are presented and compared to other correction estimates. Ideal, semi-infinite, and constrained properties of the film and the measurement tools are considered.

Baker, Michael Sean; Robinson, Alex Lockwood; Tran, Hy D.

2012-01-01T23:59:59.000Z

367

Characterization of Field Exposed Thin Film Modules: Preprint  

DOE Green Energy (OSTI)

Test arrays of thin film modules have been deployed at the Solar Energy Centre near New Delhi, India since 2002-2003. Performances of these arrays were reported by O.S. Sastry [1]. This paper reports on NREL efforts to support SEC by performing detailed characterization of selected modules from the array. Modules were selected to demonstrate both average and worst case power loss over the 8 years of outdoor exposure. The modules characterized included CdTe, CIS and three different types of a-Si. All but one of the a-Si types were glass-glass construction. None of the modules had edge seals. Detailed results of these tests are presented along with our conclusions about the causes of the power loss for each technology.

Wohlgemuth, J. H.; Sastry, O. S.; Stokes, A.; Singh, Y. K.; Kumar, M.

2012-06-01T23:59:59.000Z

368

Corbino-geometry Josephson weak links in thin superconducting films  

Science Conference Proceedings (OSTI)

I consider a Corbino-geometry superconducting-normal-superconducting Josephson weak link in a thin superconducting film, in which current enters at the origin, flows outward, passes through an annular Josephson weak link, and leaves radially. In contrast to sandwich-type annular Josephson junctions, in which the gauge-invariant phase difference obeys the sine-Gordon equation, here the gauge-invariant phase difference obeys an integral equation. I present exact solutions for the gauge-invariant phase difference across the weak link when it contains an integral number N of Josephson vortices and the current is zero. I then study the dynamics when a current is applied, and I derive the effective resistance and the viscous drag coefficient; I compare these results with those in sandwich-type junctions. I also calculate the critical current when there is no Josephson vortex in the weak link but there is a Pearl vortex nearby.

Clem, John R.

2010-11-29T23:59:59.000Z

369

Ultra-high current density thin-film Si diode  

DOE Patents (OSTI)

A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

Wang; Qi (Littleton, CO)

2008-04-22T23:59:59.000Z

370

Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration  

E-Print Network (OSTI)

Silicon-on-lattice engineered substrates (SOLES) are SOI substrates with embedded Ge layers that facilitate III-V compound integration for advanced integrated circuits. The new materials integration scheme in SOLES requires ...

Bulsara, Mayank

371

Nano-scale metal contacts for future III-V CMOS  

E-Print Network (OSTI)

As modem transistors continue to scale down in size, conventional Si CMOS is reaching its physical limits and alternative technologies are needed to extend Moore's law. Among different candidates, MOSFETs with a III-V ...

Guo, Alex

2012-01-01T23:59:59.000Z

372

Platform for monolithic integration of III-V devices with Si CMOS technology  

E-Print Network (OSTI)

Monolithic integration of III-V compound semiconductors and Si complementary metal-oxide- semiconductor (CMOS) enables the creation of advanced circuits with new functionalities. In order to merge the two technologies, ...

Pacella, Nan Yang

2012-01-01T23:59:59.000Z

373

Substrate engineering for monolithic integration of III-V semiconductors with Si CMOS technology  

E-Print Network (OSTI)

Ge virtual substrates, fabricated using Si1-xGex-.Ge, compositionally graded buffers, enable the epitaxial growth of device-quality GaAs on Si substrates, but monolithic integration of III-V semiconductors with Si CMOS ...

Dohrman, Carl Lawrence

2008-01-01T23:59:59.000Z

374

Structural Studies of Al:ZnO Powders and Thin Films | Stanford Synchrotron  

NLE Websites -- All DOE Office Websites (Extended Search)

Structural Studies of Al:ZnO Powders and Thin Films Structural Studies of Al:ZnO Powders and Thin Films Monday, June 18, 2012 - 2:00pm SSRL Main Conference Room 137-322 Dr. Bridget Ingham, Associate Investigator, MacDiarmid Institute for Advanced Materials & Nanotechnology Al-doped ZnO (Al:ZnO) is a promising transparent conducting oxide. We have used complementary synchrotron and laboratory techniques to study the incorporation of Al within the ZnO lattice, and measure its effect on the crystallinity of thin films prepared by sol-gel techniques, with an aim to understand how these properties affect the film conductivity. I will present recent results from Al:ZnO powders and thin films, prepared with varying Al concentrations and calcination temperatures. Solid state 27Al NMR and ex situ X-ray diffraction (XRD) were performed on Al:ZnO

375

Method for making surfactant-templated, high-porosity thin films  

DOE Patents (OSTI)

An evaporation-induced self-assembly method to prepare a surfactant-templated thin film by mixing a silica sol, a surfactant, and a hydrophobic polymer and then evaporating a portion of the solvent during coating onto a substrate and then heating to form a liquid-phase, thin film material with a porosity greater than approximately 50 percent. The high porosity thin films can have dielectric constants less than 2 to be suitable for applications requiring low-dielectric constants. An interstitial compound can be added to the mixture, with the interstitial compound either covalently bonded to the pores or physically entrapped within the porous structure. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

2001-01-01T23:59:59.000Z

376

Photodarkening Effect in a-(GaSe){sub 90}Ag{sub 10} Thin Films  

Science Conference Proceedings (OSTI)

The present paper reports the laser induced changes on the optical properties of a-(GaSe){sub 90}Ag{sub 10} thin films prepared by thermal evaporation technique. Thin film samples, on glass substrate, were exposed to laser light of wavelength {lambda} = 532 nm for different exposure times, t{sub E}(t{sub E}=0{sub s}, 500 s, 1000 s and 3000 s). Optical parameters like absorption coefficient and optical energy gap of as- deposited thin film and their laser induced changes were studied at three different times of exposure. The value of absorption coefficient of these thin film increases on exposing the film to laser irradiation. The optical absorption edge shift to lower photon energy i.e. the Photodarkening (PD) effect occurs. The results have been explained on the basis of structural changes that are occurring after the laser irradiation.

Gupta, Shikha; Mustafa, F. I.; Saini, G. S. S.; Goyal, Navdeep; Tripathi, S. K. [Department of Physics, Panjab University, Chandigarh-160 014 (India)

2011-12-12T23:59:59.000Z

377

COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces  

NLE Websites -- All DOE Office Websites (Extended Search)

COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces Coherent Bragg rod analyses (COBRA) experiments using synchrotron x-rays at Argonne's Advanced Photon Source (MHATT-CAT and PNC-CAT beamlines) directly revealed the sub-angstrom atomic interaction of epitaxial films with substrates. Information on how atoms in the adjoining layers of the film and substrate rearrange to mimic each other may lead to improvements in semiconductor manufacturing and the development of novel heterostructure materials, such as multilayer ferroelectrics, magnetic nanostructures and thin film superconductors. COBRA electron density map of a Gd2O3 film on a gallium arsenide substrate. The peaks correspond to folded Gd atomic positions parallel to the plane of the substrate.

378

Polycrystalline Thin Film Photovoltaics: From the Laboratory to Solar Fields (Presentation)  

SciTech Connect

The conclusions of this report are that: (1) many issues how thin-film solar cells work remain unresolved, requiring further fundamental R and D effort; (2) commercial thin-film PV module production reached 29% in 2005 in the US, indicating much more rapid growth than crystalline Si PV; (3) commercial module performance is increasing based on current knowledge, more R and D will lead to further improvement; and (4) stability of thin-film modules is acceptable ({le} 1% per year power loss) if the right manufacturing processes are used for manufacturing.

von Roedern, B.; Ullal, H.; Zweibel, K.

2006-05-01T23:59:59.000Z

379

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof  

DOE Patents (OSTI)

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Perkins, John (Boulder, CO); Van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David (Evergreen, CO); Taylor, Matthew (Golden, CO); Neuman, George A. (Holland, MI); Luten, Henry A. (Holland, MI); Forgette, Jeffrey A. (Hudsonville, MI); Anderson, John S. (Holland, MI)

2010-07-13T23:59:59.000Z

380

Thin-film CdTe and CuInSe{sub 2} photovoltaic technologies  

DOE Green Energy (OSTI)

Total-area conversion efficiency of 15%--15.8% have been achieved for thin-film CdTe and CIS solar cells. Modules with power output of 5--53 W have been demonstrated by several groups world-wide. Critical processes and reaction pathways for achieving excellent PV devices have been eluciated. Research, development and technical issues have been identified, which could result in potential improvements in device and module performance. A 1-kW thin-film CdTe array has been installed and is being tested. Multimegawatt thin-film CdTe manufacturing plants are expected to be completed in 1-2 years.

Ullal, H.S.; Zweibel, K.; von Roedern, B.G.

1993-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Effective material parameter retrieval for thin sheets: theory and application to graphene, thin silver films, and single-layer metamaterials  

Science Conference Proceedings (OSTI)

An important tool in the field of metamaterials is the extraction of effective material parameters from simulated or measured scattering parameters of a sample. Here we discuss a retrieval method for thin-film structures that can be approximated by a two-dimensional scattering sheet. We determine the effective sheet conductivity from the scattering parameters and we point out the importance of the magnetic sheet current to avoid an overdetermined inversion problem. Subsequently, we present two applications of the sheet retrieval method. First, we determine the effective sheet conductivity of thin silver films and we compare the resulting conductivities with the sheet conductivity of graphene. Second, we apply the method to a cut-wire metamaterial with an electric dipole resonance. The method is valid for thin-film structures such as two-dimensional metamaterials and frequency-selective surfaces and can be easily generalized for anisotropic or chiral media.

Tassin, Philippe; Koschny, Thomas; Soukoulis, Costas

2012-01-30T23:59:59.000Z

382

Flexible Ultra Moisture Barrier Film for Thin-Film Photovoltaic Applications  

Science Conference Proceedings (OSTI)

Flexible Thin-film photovoltaic (TFPV) is a low cost alternative to incumbent c-Si PV products as it requires less volume of costly semiconductor materials and it can potentially reduce installation cost. Among the TFPV options, copper indium gallium diselenide (CIGS) has the highest efficiency and is believed to be one of the most attractive candidates to achieve PV cost reduction. However, CIGS cells are very moisture sensitive and require module water vapor transmission rate (WVTR) of less than 1x10-4 gram of water per square meter per day (g-H2O/m2/day). Successful development and commercialization of flexible transparent ultra moisture barrier film is the key to enable flexible CIGS TFPV products, and thus enable ultimate PV cost reduction. At DuPont, we have demonstrated at lab scale that we can successfully make polymer-based flexible transparent ultra moisture barrier film by depositing alumina on polymer films using atomic layer deposition (ALD) technology. The layer by layer ALD approach results in uniform and amorphous structure which effectively reduces pinhole density of the inorganic coating on the polymer, and thus allow the fabrication of flexible barrier film with WVTR of 10-5 g-H2O/m2/day. Currently ALD is a time-consuming process suitable only for high-value, relatively small substrates. To successfully commercialize the ALD-on-plastic technology for the PV industry, there is the need to scale up this technology and improve throughput. The goal of this contract work was to build a prototype demonstrating that the ALD technology could be scaled-up for commercial use. Unfortunately, the prototype failed to produce an ultra-barrier film by the close of the project.

David M. Dean

2012-10-30T23:59:59.000Z

383

Bi-Sr-Ca-Cu-O thin films grown by flash evaporation and pulsed laser deposition  

E-Print Network (OSTI)

Bismuth-Strontium-Calcium-Copper-Oxide (BSCCO) compounds are an important family of compounds that have one of the highest transition temperatures among all high-temperature superconductors. The compound is known to exist in three distinct phases, commonly referred to as the 2201, 2212 and 2223 phases. Of these three phases, the 2212 and 2223 phases are the most important, as their transition temperature is higher than the boiling point of liquid nitrogen. It is desirable to produce the compound in thin film form, as the bulk samples are normally polycrystalline. This thesis compares thin films produced by two techniques for depositing BSCCO in order to understand the effect of various processing parameters on the final quality of the thin films. Thin films were grown by flash evaporation at Texas A&M University, and by pulsed laser deposition (PLD) at the University of Wollongong, Australia. The latter of these techniques is widely used for growing thin films of various compounds. Single-phase 2212 films were grown on a MgO substrate using the pulsed laser deposition technique from commercially available 2212 powder. The effect of annealing on the thin films was also studied.

Ganapathy Subramanian, Santhana

2003-12-01T23:59:59.000Z

384

Interfacial studies of a thin-film Li2Mn4O9 electrode  

NLE Websites -- All DOE Office Websites (Extended Search)

Interfacial studies of a thin-film Li2Mn4O9 electrode Interfacial studies of a thin-film Li2Mn4O9 electrode Title Interfacial studies of a thin-film Li2Mn4O9 electrode Publication Type Journal Article Year of Publication 1999 Authors Kostecki, Robert, Fanping Kong, Yoshiaki Matsuo, and Frank R. McLarnon Journal Electrochimica Acta Volume 45 Pagination 225-233 Keywords interfacial films, manganese oxide electrode Abstract A thin-film spinel Li2Mn4O9 electrode was prepared by spin coating onto a Pt substrate. Spectroscopic ellipsometry, X-ray diffraction and current-sensing atomic force microscopy (CSAFM) were used to characterize interfacial processes and film formation at this electrode in the presence of 1.0 M LiPF6, EC:DMC (1:1 by volume) electrolyte. Prolonged exposure of the film to the electrolyte at ambient temperature resulted in spontaneous decomposition of the spinel to λ-MnO2 without disruption of the original structure. The surface of the resulting λ-MnO2 film exhibited no significant change in morphology, however a thin passive electrode surface layer was detected by the CSAFM probe. This electrode surface layer exhibited insulating properties and most likely contained Li2O, a by-product of Li2Mn4O9 decomposition.

385

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Program Manager, Solar Program Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be using technology pioneered at the Department of Energy's National Renewable Energy Lab (NREL). The record-breaking Cadmium-Telluride (CdTe) thin film photovoltaic technology GE has chosen for its solar panels was originally developed more than a decade ago by a team of scientists led by NREL's Xuanzhi Wu, and

386

Integrated photonic structures for light trapping in thin-film Si solar cells  

E-Print Network (OSTI)

We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

Sheng, Xing

387

Cu(In,Ga)Se2 Thin-Film Concentrator Solar Cells: Preprint  

DOE Green Energy (OSTI)

Presented at the 2001 NCPV Program Review Meeting: CIGS cells were designed for operation under concentrated sunlight. This is first report of polycrystalline thin-film cell with efficiency>20%.

Ward, J.; Ramanathan, K.; Hasoon, F.; Coutts, T.; Keane, J.; Moriarty, T; Noufi, R.

2001-10-01T23:59:59.000Z

388

Photovoltaic Single-Crystalline, Thin-Film Cell Basics | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Single-Crystalline, Thin-Film Cell Basics Single-Crystalline, Thin-Film Cell Basics Photovoltaic Single-Crystalline, Thin-Film Cell Basics August 20, 2013 - 2:50pm Addthis Single-crystalline thin films are made from gallium arsenide (GaAs), a compound semiconductor that is a mixture of gallium and arsenic. Gallium arsenide (GaAs) is a compound semiconductor, a mixture of gallium and arsenic. Gallium is a byproduct of the smelting of other metals, notably aluminum and zinc, and it is rarer than gold. Arsenic is not rare, but it is poisonous. Gallium arsenide has been developed for use in solar cells at about the same time that it has been developed for light-emitting diodes, lasers, and other electronic devices that use light. GaAs solar cells offer several benefits: The GaAs bandgap is 1.43 eV-nearly ideal for single-junction solar

389

Structure and Effects of Extended Defects in Polycrystalline Si Thin Films  

DOE Green Energy (OSTI)

The structure and effects of extended defects in rapid deposited polycrystalline Si thin films were studied using a combination of high-resolution transmission electron microscopy and first-principles total energy calculations.

Yan, Y.; Al-Jassim, M. M.; Wang, T. H.; Ciszek, T. F.

2000-01-01T23:59:59.000Z

390

Integration of pentacene-based thin film transistors via photolithography for low and high voltage applications  

E-Print Network (OSTI)

An organic thin film transistor (OTFT) technology platform has been developed for flexible integrated circuits applications. OTFT performance is tuned by engineering the dielectric constant of the gate insulator and the ...

Smith, Melissa Alyson

2012-01-01T23:59:59.000Z

391

Micro/nano devices fabricated from Cu-Hf thin films  

DOE Patents (OSTI)

An all-metal microdevice or nanodevice such as an atomic force microscope probe is manufactured from a copper-hafnium alloy thin film having an x-ray amorphous microstructure.

Luber, Erik J; Ophus, Colin; Mitlin, David; Olsen, Brian; Harrower, Christopher; Radmilovi, Velimir

2013-06-04T23:59:59.000Z

392

Matrix-assisted pulsed laser thin film deposition by using Nd: YAG laser  

Science Conference Proceedings (OSTI)

Matrix-Assisted Pulsed Laser Evaporation (MAPLE) is a deposition technique, developed from Pulsed Laser Deposition (PLD) especially well suited for producing organic/polymeric thin films, which can take advantage from using Nd:YAG laser. Depending on ...

Francesco Bloisi; Mario Barra; Antonio Cassinese; Luciano Rosario Maria Vicari

2012-01-01T23:59:59.000Z

393

Efficient Föster energy transfer : from phosphorescent organic molecules to J-aggregate thin film  

E-Print Network (OSTI)

This thesis demonstrates the first ever use of Forster resonance energy transfer (FRET) to increase the quantum efficiency of a electrically pumped J-aggregate light emitting device (JLED). J-aggregate thin films are highly ...

Shirasaki, Yasuhiro

2008-01-01T23:59:59.000Z

394

Defect engineering of cuprous oxide thin-films for photovoltaic applications  

E-Print Network (OSTI)

Thin-film solar cells are promising for renewable-energy applications due to their low material usage and inexpensive manufacturing potential, making them compatible with terawatts-level deployment. Cuprous oxide (Cu?O) ...

Lee, Yun Seog

2013-01-01T23:59:59.000Z

395

Technological assessment of light-trapping technology for thin-film Si solar cell  

E-Print Network (OSTI)

The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was analyzed from the technology, market, and ...

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

396

Polyelectrolyte multilayer thin films with antimicrobial, antifouling and drug releasing properties  

E-Print Network (OSTI)

This thesis work focuses on designing thin polyelectrolyte multilayer (PEM) films via layer-bylayer (LbL) deposition technique with the ability to kill pathogenic bacteria and inactivate human viruses, especially the ...

Wong, Sze Yinn (Sze Yinn Jessie)

2011-01-01T23:59:59.000Z

397

Study on the Humidity Susceptibility of Thin-Film CIGS Absorber  

SciTech Connect

The report summarizes the research on the susceptibility of a thermally co-evaporated CuInGaSe2 (CIGS) thin-film absorber to humidity and its consequence on composition, morphology, electrical and electronic properties, and device efficiency.

Pern, F. J.; Egaas, B.; To, B.; Jiang, C. S.; Li, J. V.; Glynn, S.; DeHart, C.

2010-01-01T23:59:59.000Z

398

Earth abundant materials for high efficiency heterojunction thin film solar cells  

E-Print Network (OSTI)

We investigate earth abundant materials for thin-film solar cells that can meet tens of terawatts level deployment potential. Candidate materials are identified by combinatorial search, large-scale electronic structure ...

Buonassisi, Tonio

399

Interaction of stress and magnetic properties in patterned copper-nickel-copper thin films  

E-Print Network (OSTI)

In recent years, the epitaxial Cu/Ni/Cu thin film system has been extensively studied, due to its wide range of perpendicular magnetization. It has proved to be a model system to explore the interactions of strain, surface ...

Friend, Elizabeth, Ph. D. Massachusetts Institute of Technology

2007-01-01T23:59:59.000Z

400

Femtosecond transient absorption studies in cadmium selenide nanocrystal thin films prepared by chemical bath deposition method  

Science Conference Proceedings (OSTI)

Dynamics of photo-excited carrier relaxation processes in cadmium selenide nanocrystal thin films prepared by chemical bath deposition method have been studied by nondegenerate femtosecond transient pump-probe spectroscopy. The carriers were generated ...

M. C. Rath; J. A. Mondal; D. K. Palit; T. Mukherjee; H. N. Ghosh

2007-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Stability Issues of Transparent Conducting Oxides (TCOs) for Thin-Film Photovoltaics (Presentation)  

DOE Green Energy (OSTI)

Study of stability issues of TCOs for thin-film PV, including degradation of optical, electrical, and structural properties of TCOs in damp heat and required encapsulation to prevent moisture egress.

Pern, J.

2008-12-01T23:59:59.000Z

402

Solid state thin film battery having a high temperature lithium alloy anode  

SciTech Connect

An improved rechargeable thin-film lithium battery involves the provision of a higher melting temperature lithium anode. Lithium is alloyed with a suitable solute element to elevate the melting point of the anode to withstand moderately elevated temperatures.

Hobson, David O. (Oak Ridge, TN)

1998-01-01T23:59:59.000Z

403

Chemical vapor deposition of conjugated polymeric thin films for photonic and electronic applications  

E-Print Network (OSTI)

(cont.) Conjugated polymers have delocalized electrons along the backbone, facilitating electrical conductivity. As thin films, they are integral to organic semiconductor devices emerging in the marketplace, such as flexible ...

Lock, John P

2005-01-01T23:59:59.000Z

404

Engineering broadband and anisotropic photoluminescence emission from rare earth doped tellurite thin film photonic crystals  

E-Print Network (OSTI)

Broadband and anisotropic light emission from rare-earth doped tellurite thin films is demonstrated using Er[superscript 3+]-TeO[subscript 2] photonic crystals (PhCs). By adjusting the PhC parameters, photoluminescent light ...

Vanhoutte, Michiel

405

Design and construction of instruments for exciton diffusion characterization and for patterning of thin films  

E-Print Network (OSTI)

In this thesis the instruments explore two main aspects of organic optoelectronic devices. One instrument characterizes exciton diffusion and the other patterns organic thin films. Exciton diffusion characteristics are ...

Mendoza, Hiroshi Antonio

2012-01-01T23:59:59.000Z

406

Role of Polycrystalline Thin-Film PV Technologies in Competitive PV Module Markets: Preprint  

DOE Green Energy (OSTI)

This paper discusses the developments in thin-film PV technologies and provides an outlook on future commercial module efficiencies achievable based on today's knowledge about champion cell performance.

von Roedern, B.; Ullal, H. S.

2008-05-01T23:59:59.000Z

407

Chemical vapor deposition thin films as biopassivation coatings and directly patternable dielectrics  

E-Print Network (OSTI)

Organosilicon thin films deposited by pulsed plasma-enhanced chemical vapor deposition (PPECVD) and hot-filament chemical vapor deposition (HFCVD) were investigated as potential biopassivation coatings for neural probes. ...

Pryce Lewis, Hilton G. (Hilton Gavin), 1973-

2001-01-01T23:59:59.000Z

408

Analysis of potential applications for the templated dewetting of metal thin films  

E-Print Network (OSTI)

Thin films have a high surface-to-volume ratio and are therefore usually morphologically unstable. They tend to reduce their surface energy through transport of mass by diffusion. As a result, they decay into a collection ...

Frantzeskakis, Emmanouil

2005-01-01T23:59:59.000Z

409

Tax Credits Give Thin-Film Solar a Big Boost | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Solar a Big Boost October 18, 2010 - 2:00pm Addthis MiaSol will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act...

410

Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)  

DOE Green Energy (OSTI)

Capabilities fact sheet for the National Center for Photovoltaics: Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide that includes scope, core competencies and capabilities, and contact/web information.

Not Available

2011-06-01T23:59:59.000Z

411

Triode electron bombardment evaporation source for ultrahigh vacuum thin film deposition  

Science Conference Proceedings (OSTI)

A new electron bombardment evaporation source for ultrahigh vacuum (UHV) thin film deposition is presented. It is based on an original electrodes configuration (modeled on that of a vacuum triode) featuring

R. Verucchi; S. Nannarone

2000-01-01T23:59:59.000Z

412

Advances in thin-film solar cells for lightweight space photovoltaic power  

SciTech Connect

The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuInSe2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuInSe2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

Landis, G.A.; Bailey, S.G.; Flood, D.J.

1989-01-01T23:59:59.000Z

413

Method for etching thin films of niobium and niobium-containing compounds for preparing superconductive circuits  

DOE Green Energy (OSTI)

An improved method of preparing thin film superconducting electrical circuits of niobium or niobium compounds in which a thin film of the niobium or niobium compound is applied to a nonconductive substrate, and covered with a layer of photosensitive material. The sensitive material is in turn covered with a circuit pattern exposed and developed to form a mask of the circuit in photoresistive material on the surface of the film. The unmasked excess niobium film is removed by contacting the substrate with an aqueous etching solution of nitric acid, sulfuric acid and hydrogen fluoride, which will rapidly etch the niobium compound without undercutting the photoresist. A modification of the etching solution will permit thin films to be lifted from the substrate without further etching.

Kampwirth, Robert T. (Darien, IL); Schuller, Ivan K. (Woodridge, IL); Falco, Charles M. (Woodridge, IL)

1981-01-01T23:59:59.000Z

414

Laser-assisted sol-gel growth and characteristics of ZnO thin films  

SciTech Connect

ZnO thin films were grown on Si(100) substrates by a sol-gel method assisted by laser beam irradiation with a 325 nm He-Cd laser. In contrast to conventional sol-gel ZnO thin films, the surface morphology of the laser-assisted sol-gel thin films was much smoother, and the residual stress in the films was relaxed by laser irradiation. The luminescent properties of the films were also enhanced by laser irradiation, especially, by irradiation during the deposition and post-heat treatment stages. The incident laser beam is thought to play several roles, such as annihilating defects by accelerating crystallization during heat treatment, enhancing the surface migration of atoms and molecules, and relaxing the ZnO matrix structure during crystallization.

Kim, Min Su; Kim, Soaram [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749 (Korea, Republic of); Leem, Jae-Young [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749 (Korea, Republic of); Department of Nano Engineering, Inje University, Gimhae 621-749 (Korea, Republic of)

2012-06-18T23:59:59.000Z

415

Evaporation system and method for gas jet deposition of thin film materials  

DOE Patents (OSTI)

A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.

Schmitt, Jerome J. (New Haven, CT); Halpern, Bret L. (Bethany, CT)

1994-01-01T23:59:59.000Z

416

ANODE, CATHODE AND THIN FILM STUDIES FOR LOW TEMPERATURE SOFC'S  

DOE Green Energy (OSTI)

In this research the microstructure {leftrightarrow} property relations in solid oxide fuel cells (SOFC's) are being studied to better understand the mechanisms involved in cell performance. The overall aim is to fabricate SOFC's with controlled, stable, high performance microstructure. Most cathode studies were completed in the last DOE contract; studies during this year focused more on the influence of nonstoichiometry on the electrical performance. Studies indicate that nonstoichiometric La{sub x}Sr{sub 0.20}MnO{sub 3}(x = 0.70, 0.75, and 0.79) cathode compositions exhibit the best properties. A series of studies using these compositions fired on at temperatures of 1100, 1200, 1300 and 1400 C were performed. In all instances, 1200 C was the optimum, with the x = 0.70 composition being the best. It has an overpotential of only 0.04V at 1 A/cm{sup 2}. SEM analyses indicated no second phases or interdiffusion is detectable. Studies on optimization of anode compositions yielded the optimum volume fraction of Ni (45vol%), the best sintering temperature/time (1400 C/2 h), and the best starting materials (glycine-nitrate derived NiO and normal YSZ). In essence these results simply reflect the optimum microstructure. As such, they are being used to guide the development of optimized anodes for lower temperature operation based on Cu/CeO{sub 2} cermets. Marked success has been achieved on the placement of thin YSZ electrolytes on porous Ni/YSZ electrodes. The process being used is a transfer technique in which dense YSZ films are initially fabricated on NaCl or polymeric substrates, followed by partial dissolution of the substrate and placement of the film on the porous substrate. This technique has allowed us to produce structures with film thicknesses ranging from 70 to 3000 nm, and grain sizes ranging from 2 to 300 nm. Cells based on electrolytes this thick should operate in the 400--700 C range.

Dr. Wayne Huebner; Dr. Harlan U. Anderson

1999-11-01T23:59:59.000Z

417

Free-Space Time-Domain Method for Measuring Thin Film Dielectric Properties  

DOE Patents (OSTI)

A non-contact method for determining the index of refraction or dielectric constant of a thin film on a substrate at a desired frequency in the GHz to THz range having a corresponding wavelength larger than the thickness of the thin film (which may be only a few microns). The method comprises impinging the desired-frequency beam in free space upon the thin film on the substrate and measuring the measured phase change and the measured field reflectance from the reflected beam for a plurality of incident angles over a range of angles that includes the Brewster's angle for the thin film. The index of refraction for the thin film is determined by applying Fresnel equations to iteratively calculate a calculated phase change and a calculated field reflectance at each of the plurality of incident angles, and selecting the index of refraction that provides the best mathematical curve fit with both the dataset of measured phase changes and the dataset of measured field reflectances for each incident angle. The dielectric constant for the thin film can be calculated as the index of refraction squared.

Li, Ming; Zhang, Xi-Cheng; Cho, Gyu Cheon

2000-05-02T23:59:59.000Z

418

Transparent Conductors and Barrier Layers for Thin Film Solar Cells:  

DOE Green Energy (OSTI)

This report describes the research undertaken to increase the efficiency of thin-film solar cells based on amorphous silicon in the so-called''superstrate structure'' (glass front surface/transparent electrically conductive oxide (TCO)/pin amorphous silicon/metal back electrode). The TCO layer must meet many requirements: high optical transparency in the wavelength region from about 350 to 900 nm, low electrical sheet resistance, stability during handling and deposition of the subsequent layers and during use, a textured (rough) surface to enhance optical absorption of red and near-infrared light, and low-resistance electrical contact to the amorphous silicon p-layer. Fluorine-doped tin oxide has been the TCO used in most commercial superstrate amorphous silicon cells. Fluorine-doped zinc oxide (ZnO:F) was later shown to be even more transparent than fluorine-doped tin oxide, as well as being more resistant to the strongly reducing conditions encountered during the deposition of amorphous silicon. Solar cells based on ZnO:F showed the expected higher currents, but the fill factors were lower than standard cells grown on tin oxide, resulting in no consistent improvement in efficiency. This problem was recently mitigated by using a new proprietary p/buffer layer combination developed at BP Solar.

Gordon, R. G.; Broomhall-Dillard, R.; Liu, X.; Pang, D.; Barton, J.

2001-12-01T23:59:59.000Z

419

2010 Thin Film & Small Scale Mechanical Behavior Gordon Research Conference  

SciTech Connect

Over the past decades, it has been well established that the mechanical behavior of materials changes when they are confined geometrically at least in one dimension to small scale. It is the aim of the 2010 Gordon Conference on 'Thin Film and Small Scale Mechanical Behavior' to discuss cutting-edge research on elastic, plastic and time-dependent deformation as well as degradation mechanisms like fracture, fatigue and wear at small scales. As in the past, the conference will benefit from contributions from fundamental studies of physical mechanisms linked to material science and engineering reaching towards application in modern applications ranging from optical and microelectronic devices and nano- or micro-electrical mechanical systems to devices for energy production and storage. The conference will feature entirely new testing methodologies and in situ measurements as well as recent progress in atomistic and micromechanical modeling. Particularly, emerging topics in the area of energy conversion and storage, such as material for batteries will be highlighted. The study of small-scale mechanical phenomena in systems related to energy production, conversion or storage offer an enticing opportunity to materials scientists, who can provide new insight and investigate these phenomena with methods that have not previously been exploited.

Dr. Thomas Balk

2010-07-30T23:59:59.000Z

420

Thin-film fiber optic hydrogen and temperature sensor system  

DOE Patents (OSTI)

The invention discloses a sensor probe device for monitoring of hydrogen gas concentrations and temperatures by the same sensor probe. The sensor probe is constructed using thin-film deposition methods for the placement of a multitude of layers of materials sensitive to hydrogen concentrations and temperature on the end of a light transparent lens located within the sensor probe. The end of the lens within the sensor probe contains a lens containing a layer of hydrogen permeable material which excludes other reactive gases, a layer of reflective metal material that forms a metal hydride upon absorbing hydrogen, and a layer of semi-conducting solid that is transparent above a temperature dependent minimum wavelength for temperature detection. The three layers of materials are located at the distal end of the lens located within the sensor probe. The lens focuses light generated by broad-band light generator and connected by fiber-optics to the sensor probe, onto a reflective metal material layer, which passes through the semi-conducting solid layer, onto two optical fibers located at the base of the sensor probe. The reflected light is transmitted over fiber optic cables to a spectrometer and system controller. The absence of electrical signals and electrical wires in the sensor probe provides for an elimination of the potential for spark sources when monitoring in hydrogen rich environments, and provides a sensor free from electrical interferences. 3 figs.

Nave, S.E.

1998-07-21T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Ambipolar charge transport in microcrystalline silicon thin-film transistors  

Science Conference Proceedings (OSTI)

Hydrogenated microcrystalline silicon ({mu}c-Si:H) is a promising candidate for thin-film transistors (TFTs) in large-area electronics due to high electron and hole charge carrier mobilities. We report on ambipolar TFTs based on {mu}c-Si:H prepared by plasma-enhanced chemical vapor deposition at temperatures compatible with flexible substrates. Electrons and holes are directly injected into the {mu}c-Si:H channel via chromium drain and source contacts. The TFTs exhibit electron and hole charge carrier mobilities of 30-50 cm{sup 2}/V s and 10-15 cm{sup 2}/V s, respectively. In this work, the electrical characteristics of the ambipolar {mu}c-Si:H TFTs are described by a simple analytical model that takes the ambipolar charge transport into account. The analytical expressions are used to model the transfer curves, the potential and the net surface charge along the channel of the TFTs. The electrical model provides insights into the electronic transport of ambipolar {mu}c-Si:H TFTs.

Knipp, Dietmar; Marinkovic, M. [Electronic Devices and Nanophotonics Laboratory, Jacobs University Bremen, 28759 Bremen (Germany); Chan, Kah-Yoong [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); Faculty of Engineering, Multimedia University, Cyberjaya, 63100 Selangor (Malaysia); Gordijn, Aad [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); Stiebig, Helmut [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); Malibu Solar GmbH and Co. KG, 33609 Bielefeld (Germany)

2011-01-15T23:59:59.000Z

422

Adhesion and Thin-Film Module Reliability: Preprint  

DOE Green Energy (OSTI)

Among the infrequently measured but essential properties for thin-film (T-F) module reliability are the interlayer adhesion and cohesion within a layer. These can be cell contact layers to glass, contact layers to the semiconductor, encapsulant to cell, glass, or backsheet, etc. We use an Instron mechanical testing unit to measure peel strengths at 90{sup o} or 180{sup o} and, in some cases, a scratch and tape pull test to evaluate inter-cell layer adhesion strengths. We present peel strength data for test specimens laminated from the three T-F technologies, before and after damp heat, and in one instance at elevated temperatures. On laminated T-F cell samples, failure can occur uniformly at any one of the many interfaces, or non-uniformly across the peel area at more than one interface. Some peel strengths are << 1 N/mm. This is far below the normal Instron mechanical testing unit Instron mechanical testing unit; glass interface values of >10 N/mm. We measure a wide range of adhesion strengths and suggest that adhesion measured under higher temperature and relative humidity conditions is more relevant for module reliability.

McMahon, T. J.; Jorgensen, G. J.

2006-05-01T23:59:59.000Z

423

Status of Amorphous and Crystalline Thin Film Silicon Solar Cell Activities  

DOE Green Energy (OSTI)

This paper reviews the recent activities and accomplishments of the national Amorphous Silicon Team and a (crystalline) thin-film-Si subteam that was implemented in 2002 to research solar cell devices based on thin crystalline Si based layers. This paper reports the evolution of team organization, the technical highlights from the recent team meetings, and an outlook on commercialization potential.

von Roedern, B.

2003-05-01T23:59:59.000Z

424

Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells  

DOE Green Energy (OSTI)

This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

Chu, T.L. (University of South Florida, Tampa, FL (United States))

1992-04-01T23:59:59.000Z

425

Growth and Characterization of LiCoO? Thin Films for Microbatteries  

E-Print Network (OSTI)

LiCoO?thin films have been grown by pulsed laser deposition on stainless steel and SiO?/Si substrates. The film deposited at 600°C in an oxygen partial pressure of 100mTorr shows an excellent crystallinity, stoichiometry ...

Hui, Xia

426

Mechanical properties of surface modified silica low-k thin films  

Science Conference Proceedings (OSTI)

The surface modification of sol-gel deposited low-k thin films has been carried out successfully by trimethylchlorosilane (TMCS) using wet chemical treatment method. Ellipsometer is used to determine the thickness of films. The changes in chemical structure ... Keywords: Contact angle, Hydrophobic, Nano-indentation, Sol-gel, Surface modification

Yogesh S. Mhaisagar, Bhavana N. Joshi, Ashok M. Mahajan

2014-02-01T23:59:59.000Z

427

Pulsed laser deposition of AlMgB14 thin films  

Science Conference Proceedings (OSTI)

Hard, wear-resistant coatings of thin film borides based on AlMgB{sub 14} have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB{sub 14} used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB{sub 14} has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB{sub 14} films. Processing methods to eliminate large particles on the surface of the AlMgB{sub 14} films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel substrates, assessed using the Rockwell C indentation adhesion test, was found to be substantially improved by the deposition of a titanium interlayer, but unaffected by increasing the temperature of the substrates. The titanium was found to improve the adhesion strength of the films because it reacted with both the steel and the AlMgB{sub 14} compound to form new compounds. Ultimately, it was concluded that the films with the best properties were produced with a femtosecond pulsed laser and were deposited on top of a titanium interlayer to improve the thin film adhesion.

Russell, Alan; Bastawros, Ashraf; Tan, Xiaoli

2008-11-18T23:59:59.000Z

428

Equilibrium and nonequilibrium thermodynamics of particle-stabilized thin liquid films  

E-Print Network (OSTI)

Our recent quasi-two-dimensional thermodynamic description of thin-liquid films stabilized by colloidal particles is generalized to describe nonuniform equilibrium states of films in external potentials and nonequilibrium transport processes produced in the film by gradients of thermodynamic forces. Using a Monte--Carlo simulation method, we have determined equilibrium equations of state for a film stabilized by a suspension of hard spheres. Employing a multipolar-expansion method combined with a flow-reflection technique, we have also evaluated the short-time film-viscosity coefficients and collective particle mobility.

J. Blawzdziewicz; E. Wajnryb

2008-08-13T23:59:59.000Z

429

Low temperature process for obtaining thin glass films  

DOE Patents (OSTI)

A method for coating a substrate with a glass-like film comprises, applying to the substrate an aqueous alcoholic solution containing a polymeric network of partially hydrolyzed metal alkoxide into which network there is incorporated finely powdered glass, whereby there is achieved on the substrate a coherent and adherent initial film; and heating said film to a temperature sufficient to melt said powdered glass component, thereby converting said initial film to a final densified film.

Brinker, C. Jeffrey (Albuquerque, NM); Reed, Scott T. (Albuquerque, NM)

1984-01-01T23:59:59.000Z

430

Structure and Electrocatalysis of Sputtered RuPt Thin-film Electrodes  

DOE Green Energy (OSTI)

The structural and electrochemical properties of RuPt thin-film electrodes fabricated by RF magnetron sputtering have been investigated. Grazing incidence X-ray diffraction data show a transition from a face-centered-cubic (fcc) to hexagonal-cubic-packed (hcp) structure as Ru percentage increases. The transition occurs gradually between 32-58% Ru, which is significantly different from the bulk RuPt phase diagram. The catalytic activity of the thin-film electrodes for methanol oxidation shows a broad peak near 40-60% Ru, consistent with previous reports. The relationship between catalytic activity and film structure is discussed and contrasted with previous investigations.

Kim, T-W

2005-02-02T23:59:59.000Z

431

Method of preparing high-temperature-stable thin-film resistors  

DOE Patents (OSTI)

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Raymond, L.S.

1980-11-12T23:59:59.000Z

432

Improved Transparent Conducting Oxides Boost Performance of Thin-Film Solar Cells (Fact Sheet)  

DOE Green Energy (OSTI)

Today?s thin-film solar cells could not function without transparent conducting oxides (TCOs). TCOs act as a window, both protecting the cell and allowing light to pass through to the cell?s active layers. Until recently, TCOs were seen as a necessary, but static, layer of a thin-film photovoltaic (PV) cell. But a group of researchers at the National Renewable Energy Laboratory (NREL) has identified a pathway to producing improved TCO films that demonstrate higher infrared transparency. To do so, they have modified the TCOs in ways that did not seem possible a few years ago.

Not Available

2011-02-01T23:59:59.000Z

433

Process for forming epitaxial perovskite thin film layers using halide precursors  

DOE Patents (OSTI)

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Clem, Paul G. (Albuquerque, NM); Rodriguez, Mark A. (Albuquerque, NM); Voigt, James A. (Corrales, NM); Ashley, Carol S. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

434

Method of preparing high-temperature-stable thin-film resistors  

DOE Patents (OSTI)

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Raymond, Leonard S. (Tucson, AZ)

1983-01-01T23:59:59.000Z

435

Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor  

E-Print Network (OSTI)

The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films deposited at low substrate temperature for devices such as thin film transistors (TFTs). The effect of the deposition parameters such as doping gas concentration, substrate temperature, hydrogen dilution, helium dilution, power density, and pressure at 50 kHz rf frequency on the films' characteristics were analyzed. The films' electrical property was characterized by its dark resistivity. The chemical composition and bonding characteristics were discussed. p-channel TFTs were fabricated with these optimized films. Three different levels of dopant concentrations in the channel were used to detect the dopant effect on the TFT properties. Doping resulted in the increase of film deposition rate. The low film deposition rate at the high temperature deposition corresponds to a dense structured film. The increase of gas phase H? concentration could increase H? etching of the weak bonds in the film, which is consistent with the decrease of the deposition rate. Film's dark conductivity is determined by the atomic B concentration in the film, the substrate temperature, the ion bombardment effect, the surface morphology, and the gas phase and film hydrogen concentration. At high power density and high pressure plasma condition, film with a high deposition rate shows a high conductivity. However, excessive ion bombardment effect, e.g. in powdery plasma region, limits the further increase of the conductivity. Film deposited with He dilution demonstrates a higher conductivity compared to the H? dilution counterpart. This might be attributed to a more effective ion bombardment effect of the former. Powder generation in the plasma significantly affects the conductivity of He diluted film compared to the H? diluted ones, which might be due to the less H? etching effect at the He dilution deposition. The output and transfer characteristics show the normal p-channel TFTs behavior. TFT characteristics, such as mobility, threshold voltage, and on-off current ratio were affected by the doping gas concentration in the channel layer and the deposition process.

Nominanda, Helinda

2004-01-01T23:59:59.000Z

436

Cu-Ga-Se Thin Films Prepared by a Combination of Electrodeposition and Evaporation Techniques  

Science Conference Proceedings (OSTI)

Cu-Ga-Se thin films were prepared using a combination of electrodeposition and evaporation techniques. A Cu-Se/Mo/glass precursor thin film was first prepared by galvanostatic electrodeposition. On top of this film three different thicknesses of Ga were deposited by evaporation. The Cu-Ga-Se thin films were formed by annealing the Ga/Cu-Se/Mo/glass thin film configuration in a tubular chamber with Se powder, at different temperatures. Thin films were characterized by X-ray diffraction (XRD), photocurrent spectroscopy (PS), inductively coupled plasma (ICP) analysis, and scanning electron microscopy (SEM). The detailed analysis from X-ray reveals that after annealing at 550 C the CuGaSe{sub 2} phase is formed when the thickness of Ga is 0.25 {mu}m, however at 0.5 {mu}m and 1.0 {mu}m Ga the formation of CuGa{sub 3}Se{sub 5} and CuGa{sub 5}Se{sub 8} phases is observed respectively. Band gap values were obtained using photocurrent spectroscopy.

Fernandez, A. M.; Turner, J. A.

2012-04-01T23:59:59.000Z

437

Optical Properties of MEH-PPV Thin Films Containing ZnO Nanoparticles  

Science Conference Proceedings (OSTI)

Thin films of poly [2-methoxy-5(2'-ethyl hexyloxy)-phenylene vinylene](MEH-PPV) containing different weight percent of ZnO nanoparticles were deposited by spin coating from THF solutions and their optical properties were investigated. Optical characterization of the nanocomposite thin films were performed by Ultraviolet-Visible Spectrophotometer (UV-Vis) and Photoluminescence Spectrometer while the thickness of the thin films was measured by using Surface Profiler. The UV-Vis absorption spectra of MEH-PPV: ZnO films showed a small red shift as compared with pure MEH-PPV. Similarly, a small red shift was found in PL emission spectra with increasing the content of ZnO nanoparticles.

Zayana, N. Y. [NANO-SciTech Center (NST), Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam (Malaysia); Shariffudin, S. S. [NANO- ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam (Malaysia); Jumali, N. S.; Shaameri, Z.; Hamzah, A. S. [Organic Synthesis Research Laboratory, Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam (Malaysia); Rusop, M. [NANO-SciTech Center (NST), Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam (Malaysia); NANO- ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam (Malaysia)

2011-05-25T23:59:59.000Z

438

Low Cost Thin Film Building-Integrated Photovoltaic Systems  

DOE Green Energy (OSTI)

The goal of the program is to develop 'LOW COST THIN FILM BUILDING-INTEGRATED PV SYSTEMS'. Major focus was on developing low cost solution for the commercial BIPV and rooftop PV market and meet DOE LCOE goal for the commercial market segment of 9-12 cents/kWh for 2010 and 6-8 cents/kWh for 2015. We achieved the 2010 goal and were on track to achieve the 2015 goal. The program consists of five major tasks: (1) modules; (2) inverters and BOS; (3) systems engineering and integration; (4) deployment; and (5) project management and TPP collaborative activities. We successfully crossed all stage gates and surpassed all milestones. We proudly achieved world record stable efficiencies in small area cells (12.56% for 1cm2) and large area encapsulated modules (11.3% for 800 cm2) using a triple-junction amorphous silicon/nanocrystalline silicon/nanocrystalline silicon structure, confirmed by the National Renewable Energy Laboratory. We collaborated with two inverter companies, Solectria and PV Powered, and significantly reduced inverter cost. We collaborated with three universities (Syracuse University, University of Oregon, and Colorado School of Mines) and National Renewable Energy Laboratory, and improved understanding on nanocrystalline material properties and light trapping techniques. We jointly published 50 technical papers in peer-reviewed journals and International Conference Proceedings. We installed two 75kW roof-top systems, one in Florida and another in New Jersey demonstrating innovative designs. The systems performed satisfactorily meeting/exceeding estimated kWh/kW performance. The 50/50 cost shared program was a great success and received excellent comments from DOE Manager and Technical Monitor in the Final Review.

Dr. Subhendu Guha; Dr. Jeff Yang

2012-05-25T23:59:59.000Z

439

Scanning tunneling microscopic studies of SiO2 thin film supported metal nano-clusters  

E-Print Network (OSTI)

This dissertation is focused on understanding heterogeneous metal catalysts supported on oxides using a model catalyst system of SiO2 thin film supported metal nano-clusters. The primary technique applied to this study is scanning tunneling microscopy (STM). The most important constituent of this model catalyst system is the SiO2 thin film, as it must be thin and homogeneous enough to apply electron or ion based surface science techniques as well as STM. Ultra-thin SiO2 films were successfully synthesized on a Mo(112) single crystal. The electronic and geometric structure of the SiO2 thin film was investigated by STM combined with LEED, Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS). The relationship between defects on the SiO2 thin film and the nucleation and growth of metal nano-clusters was also investigated. By monitoring morphology changes during thermal annealing, it was found that the metal-support interaction is strongly dependent on the type of metal as well as on the defect density of the SiO2 thin film. Especially, it was found that oxygen vacancies and Si impurities play an important role in the formation of Pd-silicide. By substituting Ti atoms into the SiO2 thin film network, an atomically mixed TiO2-SiO2 thin film was synthesized. Furthermore, these Ti atoms play a role as heterogeneous defects, resulting in the creation of nucleation sites for Au nano-clusters. A marked increase in Au cluster density due to Ti defects was observed in STM. A TiO2-SiO2 thin film consisting of atomic Ti as well as TiOx islands was also synthesized by using higher amounts of Ti (17 %). More importantly, this oxide surface was found to have sinter resistant properties for Au nano-clusters, which are desirable in order to make highly active Au nano-clusters more stable under reaction conditions.

Min, Byoung Koun

2004-08-01T23:59:59.000Z

440

Electrical and optical properties of sputtered amorphous vanadium oxide thin films  

Science Conference Proceedings (OSTI)

Amorphous vanadium oxide (VO{sub x}) is a component found in composite nanocrystalline VO{sub x} thin films. These types of composite films are used as thermistors in pulsed biased uncooled infrared imaging devices when containing face centered cubic vanadium monoxide phase crystallites, and substantial fractions of amorphous material in the composite are necessary to optimize device electrical properties. Similarly, optoelectronic devices exploiting the metal-to-semiconductor transition contain the room-temperature monoclinic or high-temperature (>68 deg. C) rutile vanadium dioxide phase. Thin films of VO{sub x} exhibiting the metal-to-semiconductor transition are typically polycrystalline or nanocrystalline, implying that significant amounts of disordered, amorphous material is present at grain boundaries or surrounding the crystallites and can impact the overall optical or electronic properties of the film. The performance of thin film material for either application depends on both the nature of the crystalline and amorphous components, and in this work we seek to isolate and study amorphous VO{sub x}. VO{sub x} thin films were deposited by pulsed dc reactive magnetron sputtering to produce amorphous materials with oxygen contents {>=}2, which were characterized electrically by temperature dependent current-voltage measurements and optically characterized by spectroscopic ellipsometry. Film resistivity, thermal activation energy, and complex dielectric function spectra from 0.75 to 6.0 eV were used to identify the impact of microstructural variations including composition and density.

Podraza, N. J. [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Gauntt, B. D. [Materials Characterization Department, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Motyka, M. A.; Horn, M. W. [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Dickey, E. C. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2012-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
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441

Processing and modeling issues for thin-film solar cell devices. Final report  

DOE Green Energy (OSTI)

During the third phase of the subcontract, IEC researchers have continued to provide the thin film PV community with greater depth of understanding and insight into a wide variety of issues including: the deposition and characterization of CuIn{sub 1-x}Ga{sub x}Se{sub 2}, a-Si, CdTe, CdS, and TCO thin films; the relationships between film and device properties; and the processing and analysis of thin film PV devices. This has been achieved through the systematic investigation of all aspects of film and device production and through the analysis and quantification of the reaction chemistries involved in thin film deposition. This methodology has led to controlled fabrications of 15% efficient CuIn{sub 1-x}Ga{sub x}Se{sub 2} solar cells over a wide range of Ga compositions, improved process control of the fabrication of 10% efficient a-Si solar cells, and reliable and generally applicable procedures for both contacting and doping films. Additional accomplishments are listed below.

Birkmire, R.W.; Phillips, J.E. [Univ. of Delaware, Newark, DE (United States). Institute of Energy Conversion

1997-11-01T23:59:59.000Z

442

Metal Oxidation Kinetics and the Transition from Thin to Thick Films  

SciTech Connect

We report an investigation of growth kinetics and transition from thin to thick films during metal oxidation. In the thin film limit (< 20 nm), Cabrera and Mott’s theory is usually adopted by explicitly considering ionic drift through the oxide in response to electric fields, where the growth kinetics follow an inverse logarithmic law . It is generally accepted that Wagner’s theory, involving self-diffusion, is valid only in the limit of thick film regime (>1?m) and leads to parabolic growth kinetics , where l is the oxide film thickness. Theory presented here unifies the two models and provides a complete description of oxidation including the transition from thin to thick film. The range of validity of Cabrera and Mott’s theory and Wagner’s theory can be well defined in terms of the Debye-Hückel screening length. The transition from drift-dominated ionic transport for thin film to diffusion-dominated transport for thick film is found to strictly follow the direct logarithmic law that is frequently observed in many experiments.

Xu, Zhijie; Rosso, Kevin M.; Bruemmer, Stephen M.

2012-09-01T23:59:59.000Z

443

Engineering electroresponsive layer-by-layer thin films  

E-Print Network (OSTI)

Electroresponsive layer-by-layer (LbL) polymer films and polymer nanocomposite films were investigated as model systems for electrically triggered drug delivery applications and "mechanomutable" surface coating applications. ...

Schmidt, Daniel J., Ph. D. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

444

Thin Film Si Bottom Cells for Tandem Device Structures: Final Technical Report, 15 December 2003 - 15 October 2007  

DOE Green Energy (OSTI)

GIT and IEC developed thin-film Si bottom cell and showed that deposition of top cell in tandem device did not reduce bottom cell performance.

Yelundur, V.; Hegedus, S.; Rohatgi, A.; Birkmire, R.

2008-11-01T23:59:59.000Z

445

Thin film nanoporous silica and graphene based biofuel cells (iBFCs) for low-power implantable medical device applications.  

E-Print Network (OSTI)

??This thesis describes the fabrication and characterization of an inorganic catalyst based glucose Biofuel cell using nanoporous (mesoporous) silica thin-film as a functional membrane. The… (more)

Sharma, Tushar

2011-01-01T23:59:59.000Z

446

Columnar grain growth of FePt(L1{sub 0}) thin films  

SciTech Connect

An experimental approach for obtaining perpendicular FePt-SiOx thin films with a large height to diameter ratio FePt(L1{sub 0}) columnar grains is presented in this work. The microstructure for FePt-SiOx composite thin films as a function of oxide volume fraction, substrate temperature, and film thickness is studied by plan view and cross section TEM. The relations between processing, microstructure, epitaxial texture, and magnetic properties are discussed. By tuning the thickness of the magnetic layer and the volume fraction of oxide in the film at a sputtering temperature of 410 deg. C, a 16 nm thick perpendicular FePt film with {approx}8 nm diameter of FePt grains was obtained. The height to diameter ratio of the FePt grains was as large as 2. Ordering at lower temperature can be achieved by introducing a Ag sacrificial layer.

Yang En; Ho Hoan [Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Laughlin, David E. [Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); ALCOA Professor of Physical Metallurgy, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Zhu Jiangang [Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); ABB Professor of Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

2012-04-01T23:59:59.000Z

447

Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering  

Science Conference Proceedings (OSTI)

Cuprous oxide (Cu{sub 2}O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu{sub 2}O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu{sub 2}O at temperatures above 250 K, reaching 62 cm{sup 2}/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu{sub 2}O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications.

Lee, Yun Seog; Winkler, Mark T.; Siah, Sin Cheng; Brandt, Riley; Buonassisi, Tonio [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2011-05-09T23:59:59.000Z

448

Molecular beam epitaxy passivation studies of Ge and III-V semiconductors for advanced CMOS  

Science Conference Proceedings (OSTI)

Future CMOS technologies will require the use of substrate material with a very high mobility in order to fulfil the performance requirements. Therefore, combination of Ge p-MOS with n-MOS devices made out of high mobility III/V compounds, such as GaAs, ... Keywords: High mobility semiconductors, Molecular beam epitaxy (MBE), Passivation

C. Merckling; J. Penaud; D. Kohen; F. Bellenger; A. Alian; G. Brammertz; M. El-Kazzi; M. Houssa; J. Dekoster; M. Caymax; M. Meuris; M. M. Heyns

2009-07-01T23:59:59.000Z

449

Thin film heterojunction photovoltaic cells and methods of making the same  

DOE Patents (OSTI)

A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250.degree. C. and 500.degree. C. for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.

Basol, Bulent M. (Los Angeles, CA); Tseng, Eric S. (Los Angeles, CA); Rod, Robert L. (Los Angeles, CA)

1983-06-14T23:59:59.000Z

450

Tax Credits Give Thin-Film Solar a Big Boost | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Tax Credits Give Thin-Film Solar a Big Boost Tax Credits Give Thin-Film Solar a Big Boost Tax Credits Give Thin-Film Solar a Big Boost October 18, 2010 - 2:00pm Addthis MiaSolé will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.| Photo courtesy of MiaSolé MiaSolé will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.| Photo courtesy of MiaSolé Lorelei Laird Writer, Energy Empowers What are the key facts? MiaSolé adding more than ten times its current manufacturing capacity Company expects to double or triple its workforce with expansion Expansion is funded by $101 million in Recovery Act tax credit For MiaSolé, a relative newcomer to the solar energy market, 2010 has been

451

Microstructure and Magnetic Properties of PrMnO{sub 3} Bulk and Thin Film  

Science Conference Proceedings (OSTI)

Perovskite PrMnO{sub 3}(PMO) had been prepared in bulk by solid state reaction and thin films on corning glass, fused silica and MgO (100) glass substrate by pulsed laser deposition technique. SEM micrographs show that grains with size 2{approx}3 {mu}m is observed in bulk PMO while thin films PMO show strongly connected grain structure with particle size that not larger than 100 nm. X-ray diffraction analysis shows that all samples are in single phase with orthorhombic crystal structure. Bulk PMO sample had lattice strain of 0.134% which is the lowest value among others. However, larger lattice strain was observed in thin film samples due to lattice mismatch between film-substrate and caused the MnO{sub 6} to deform. All samples shown paramagnetic or antiferromagnetic behavior, enhancement in magnetization value occurred for all PMO grew as film. We believe that larger lattice strain favor the grain growth of PMO towards more order phase. In summary, formation of structure and microstructure of thin film PMO depends on type of substrate used and it affect the magnetic property.

Lim, K. P.; Halim, S. A.; Chen, S. K.; Ng, S. W.; Wong, J. K.; Gan, H. M. Albert [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Woon, H. S. [College of Engineering, Universiti Tenaga Nasional, Jalan IKRAM-UNITEN, 43000 Kajang, Selangor (Malaysia)

2011-03-30T23:59:59.000Z

452

Characterization of Sputter Deposited Thin Film Scandate Cathodes for Miniaturized Thermionic Converter Applications  

DOE Green Energy (OSTI)

We have successfully developed a method for fabricating scandate-based thermionic emitters in thin film form. The primary goal of our effort is to develop thin film emitters that exhibit low work fimction, high intrinsic electron emissivity, minimum thermal activation properties and that can be readily incorporated into a microgap converter. Our approach has been to incorporate BaSrO into a SqOq matrix using rf sputtering to produce thin films. Diode testing has shown the resulting films to be electron emissive at temperatures as low as 900 K with current densities of 0.1 mA.cm-2 at 1100 K and saturation voltages. We calculate an approximate maximum work function of 1.8 eV and an apparent emission constant (Richardson's constant, A*) of 36 mA.cm-2.K-2. Film compositional and structural analysis shows that a significant surface and subsurface alkaline earth hydroxide phase can form and probably explains the limited utilization and stability of Ba and its surface complexes. The flexibility inherent in sputter deposition suggests alternate strategies for eliminating undesirable phases and optimizing thin film emitter properties.

King, D.B.; Ruffner, J.H.; Zavadil, K.R.

1998-12-14T23:59:59.000Z

453

Catalyst-infiltrated supporting cathode for thin-film SOFCs  

E-Print Network (OSTI)

LBNL-55226 Catalyst-Infiltrated Supporting Cathode for Thin-demonstrate that cobalt catalyst-infiltrated LSM can beinfiltrating nano- sized catalyst particles into its pores

Yamahara, Keiji; Jacobson, Craig P.; Visco, Steven J.; De Jonghe, Lutgard C.

2004-01-01T23:59:59.000Z

454

Inexpensive Production of High Density Thin Ceramic Films on ...  

Steven Visco, Lutgard DeJonghe, and Craig Jacobson have developed a simple, inexpensive method for producing high density, crack-free, thin ceramic ...

455

Picosecond laser structuring of thin film platinum layers covered with tantalum pentoxide isolation  

Science Conference Proceedings (OSTI)

A thin film layer system consisting of platinum (Pt) as conductive layer on a glass substrate and tantalum pentoxide as isolating layer on top of the platinum is attractive for designing biocompatible conductor paths and contact pads for bio sensor chips. For the flexible and rapid patterning of the conductive and the isolating layers, both, the complete removal and the selective ablation of the individual thin films were investigated using ultra-short laser pulses with about 10 ps pulse duration and 1064 nm wavelength at low laser fluences. A platinum film covered with tantalum pentoxide shows a significantly lower ablation threshold than a single Pt film on glass alone when illuminated from the front side. Furthermore, we explored that the tantalum pentoxide film can be removed by glass side illumination from the Pt film, without affecting the Pt film and leaving the Pt film on the glass substrate intact. Those ablation phenomena occur at laser fluences of about 0.2 J/cm{sup 2}, far below the evaporation limit of platinum. We present a detailed ablation threshold value examination for the structuring of these layer systems by front side and glass side irradiation for different film thicknesses. Furthermore, we discuss the possible underlying physical mechanisms of these ablation phenomena.

Heise, Gerhard; Huber, Heinz [Lasercenter, Munich University of Applied Sciences, Lothstr. 34, D-80335 Muenchen (Germany); Trappendreher, Daniel [Heinz-Nixdorf-Chair for Medical Electronics, Technische Universitaet Muenchen, Theresienstrasse 90, D-80333 Muenchen (Germany); Lasercenter, Munich University of Applied Sciences, Lothstr. 34, D-80335 Muenchen (Germany); Ilchmann, Florian; Weiss, Robin S.; Wolf, Bernhard [Heinz-Nixdorf-Chair for Medical Electronics, Technische Universitaet Muenchen, Theresienstrasse 90, D-80333 Muenchen (Germany)

2012-07-01T23:59:59.000Z

456

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films  

Science Conference Proceedings (OSTI)

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

2008-05-01T23:59:59.000Z

457

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films  

Science Conference Proceedings (OSTI)

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

2008-01-01T23:59:59.000Z

458

Highly Conductive Textured Molybdenum Doped Indium Oxide Thin Films  

DOE Green Energy (OSTI)

We report on the pulsed laser deposition (PLD) of Mo-doped indium oxide (IMO) films with mobilities of up to 125 cm2/Vsec. Films have been grown from targets with 1-4 wt.% molybdenum. The optimum electrical and optical properties were obtained with the 2% target and yielded a maximum conductivity of 3717 S/cm with mobilities of 99 cm2/V-sec on (100) yttria stabilized zirconia (YSZ) single crystal substrates. Films also exhibit greater than 90% transparency in the visible range. Compared to commercial indium tin oxide (ITO) films, these PLD-grown IMO films have similar conductivity but since they have substantially higher mobility they have a correspondingly lower carrier concentration. The lower carrier concentration should extend the infrared window of the transparency for films of the same conductivity. This may lead to improved performance in a number of applications requiring improved performance TCOs.

Warmsingh, C.; Yoshida, Y.; Readey, D.; Perkins, J.; Parilla, P.; Teplin, C.; Kaydanova, T.; Alleman, J.; Gedvilas, L.; Keyes, B.; Gessert, T.; Coutts, T.; Ginley, D.

2003-05-01T23:59:59.000Z

459

Physical Properties of HWCVD Microcrystalline Silicon Thin Films: Preprint  

DOE Green Energy (OSTI)

This conference paper describes Microcrystalline silicon films were grown with different thicknesses and different hydrogen dilution ratios on glass and Si substrates. Some films were deposited with a seed layer, whereas others were deposited directly on the substrate. We used atomic force microscopy, scanning electron microscopy, and X-ray diffraction to study the morphology and crystalline structure of the samples. We did not find a significant influence of the different substrates on the morphology or crystalline structure. The presence of the seed layer enhanced the crystallization process, decreasing the amount of amorphous layer present in the films. The microstructure of most films was formed by grains, with a subgrain structure. Films grown with low values of dilution ratio had (220) texture and elongated grains, whereas films deposited with high values of dilution ratio were randomly oriented and had an irregular shape.

Moutinho, H. R.; Romero, M. J.; Jiang, C. S.; Xu, Y.; Nelson, B. P.; Jones, K. M.; Mahan, A. H.; Al-Jassim, M. M.

2002-05-01T23:59:59.000Z

460

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1996-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells. 4 figs.

Lauf, R.J.

1996-04-02T23:59:59.000Z

462

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

463

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells. 4 figures.

Lauf, R.J.

1994-04-26T23:59:59.000Z

464

Enhanced Efficiency of Light-Trapping Nanoantenna Arrays for Thin Film Solar Cells  

E-Print Network (OSTI)

We suggest a novel concept of efficient light-trapping structures for thin-film solar cells based on arrays of planar nanoantennas operating far from plasmonic resonances. The operation principle of our structures relies on the excitation of chessboard-like collective modes of the nanoantenna arrays with the field localized between the neighboring metal elements. We demonstrated theoretically substantial enhancement of solar-cell short-circuit current by the designed light-trapping structure in the whole spectrum range of the solar-cell operation compared to conventional structures employing anti-reflecting coating. Our approach provides a general background for a design of different types of efficient broadband light-trapping structures for thin-film solar-cell technologically compatible with large-area thin-film fabrication techniques.

Simovski, Constantin R; Voroshilov, Pavel M; Guzhva, Michael E; Belov, Pavel A; Kivshar, Yuri S

2013-01-01T23:59:59.000Z

465

Titanium and Magnesium Co-Alloyed Hematite Thin Films for Photoelectrochemical Water Splitting  

DOE Green Energy (OSTI)

Using a combination of density functional theory calculation and materials synthesis and characterization we examine the properties of charge-compensated Ti and Mg co-alloyed hematite thin films for the application of photoelectrochemical (PEC) water splitting. We find that the charge-compensated co-alloying results in the following effects: (1) It enhances the solubility of Mg and Ti, which leads to reduced electron effective mass and therefore increased electron mobility; (2) It tunes the carrier density and therefore allows the optimization of electrical conductivity; and (3) It reduces the density of charged defects and therefore reduces carrier recombination. As a result, the Ti and Mg co-alloyed hematite thin films exhibit improved water oxidation photocurrent magnitudes as compared to pure hematite thin films. Our results suggest that charge-compensated co-alloying is a plausible approach for engineering hematite for the application of PEC water splitting.

Tang, H.; Yin, W. J.; Matin, M. A.; Wang, H.; Deutsch, T.; Al-Jassim, M. M.; Turner, J. A.; Yan, Y.

2012-04-01T23:59:59.000Z

466

Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors  

DOE Patents (OSTI)

A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN (thin film network) manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure. All three types of resistors are temperature-stable and laser-trimmable for precise definition of resistance values.

Norwood, D.P.

1986-08-07T23:59:59.000Z

467

Stress Management: Revealing Defects in Thin Silicon Films  

NLE Websites -- All DOE Office Websites (Extended Search)

caused by the manufacturing process for strained-silicon films. Strained silicon is a new, rapidly developing material for building enhanced-performance silicon-based...

468

Thin film techniques for solid oxide fuel cells  

The same parabolic rate law of film growth was found [8], indicating that EVD of lanthanum chromite can also be controlled by solid state dif- fusion. ...

469

Electrochemical studies of the LiFePO thin films prepared with pulsed laser deposition  

Science Conference Proceedings (OSTI)

Thin films of LiFePO4 have been prepared on stainless steel substrates with pulsed laser deposition utilizing an Ar atmosphere. Films were characterized with XRD, SEM, Raman spectroscopy and electrochemistry in liquid electrolyte. Raman spectral analysis revealed the presence of carbon in the films, even though the targets contained less than a few percent residual carbon. The Raman spectra also suggest the presence of various iron oxide species on the surface of the film. The 75nm film showed reversible cycling of more than 90 mAh/g for 60 cycles and a coulombic efficiency close to 1. Variable sweep rate cyclic voltammetry showed a diffusion-controlled reaction with an effective diffusivity of about 10-12 cm2/s. The performance of the thicker film was poor with a coulombic efficiency much less than 1.

Song, Seung-Wan; Reade, Ronald P.; Striebel, Kathryn A.

2003-05-20T23:59:59.000Z

470

Solvent-assisted growth of metal phthalocyanine thin films on Au(111)  

Science Conference Proceedings (OSTI)

Thin films of metal phthalocyanine (MPc) are grown on an Au(111) support with a newly developed aerosol molecular beam deposition source and characterized in situ via ultrahigh vacuum scanning tunneling microscopy. MPcs are delivered to Au(111) in a series of N{sub 2}-entrained microsized solvent droplets of variable surface residence time. Phthalocyanine film registration to the herringbone reconstruction of the Au(111) surface, indicative of thermodynamically favored structure, is observed at submonolayer coverages for aromatic solvents with long residence times. Aerosol-deposited monolayer film structures are noncrystalline with tilted MPc orientations and vacancy nanocavities. Upon annealing, MPc molecules adopt flat-lying orientations with respect to the substrate and vacancies are eliminated. Film morphologies indicate solvation-mediated film nucleation and growth, with less long-range ordering that in vapor-generated films.

Tskipuri, Levan; Shao Qian; Reutt-Robey, Janice [Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland 20742-4454 (United States)

2012-05-15T23:59:59.000Z

471

Method to synthesize and produce thin films by spray pyrolysis  

SciTech Connect

Forming a film by spraying onto a heated substrate an atomized solution containing the appropriate salt of a constituent element of the film and a highly soluble (i.e., greater than 1 M) organic acid in sufficient amount to reduce the oxidation state of at least one solute element of the spray solution after contacting the heated substrate.

Squillante, Michael R. (Waltham, MA)

1982-06-22T23:59:59.000Z

472

Method to synthesize and produce thin films by spray pyrolysis  

DOE Patents (OSTI)

Forming a film by spraying onto a heated substrate an atomized solution containing the appropriate salt of a constituent element of the film and a reducing agent at a concentration greater than 1 M and greater than 10 times the stoichiometric amount of reducing agent.

Turcotte, Richard L. (Malden, MA)

1982-07-06T23:59:59.000Z

473

Role of indium in highly crystalline ZnO thin films  

Science Conference Proceedings (OSTI)

Zinc oxide and indium doped zinc oxide (ZnO:In) transparent conducting thin films were deposited on glass substrates by pulsed DC magnetron sputtering using separate Zn and In targets. The independent control of the In content in ZnO has helped us to explore the role of indium in influencing the oriented (002) growth, crystallinity, conductivity and mobility of the doped films. The lowest resistivity of ZnO:In thin film is 2.73 Multiplication-Sign 10{sup -3} ohm-cm. At the optimal condition of high (002) orientation, ZnO:In films with electrical resistivity of 7.63 Multiplication-Sign 10{sup -3} ohm.cm and mobility of 126.4 cm{sup 2}/V.s are achieved.

Singh, Anil; Chaudhary, Sujeet; Pandya, Dinesh K. [Thin Film Laboratory, Physics Department, Indian Institute of Technology Delhi, New Delhi 110016 (India)

2013-02-05T23:59:59.000Z

474

Structural controlled magnetic anisotropy in Heusler L1{sub 0}-MnGa epitaxial thin films  

Science Conference Proceedings (OSTI)

Ferromagnetic L1{sub 0}-MnGa thin films have been epitaxially grown on GaN, sapphire, and MgO substrates using molecular beam epitaxy. Using diffraction techniques, the epitaxial relationships are determined. It is found that the crystalline orientation of the films differ due to the influence of the substrate. By comparing the magnetic anisotropy to the structural properties, a clear correlation could be established indicating that the in-plane and out-of-plane anisotropy is directly determined by the crystal orientation of the film and could be controlled via selection of the substrates. This result could be helpful in tailoring magnetic anisotropy in thin films for spintronic applications.

Wang Kangkang; Lu Erdong; Smith, Arthur R. [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Knepper, Jacob W.; Yang Fengyuan [Department of Physics, Ohio State University, 191 Woodruff Ave., Columbus, Ohio 43210 (United States)

2011-04-18T23:59:59.000Z

475

Structure determination of thin CoFe films by anomalous x-ray diffraction  

Science Conference Proceedings (OSTI)

This work reports on the investigation of structure-property relationships in thin CoFe films grown on MgO. Because of the very similar scattering factors of Fe and Co, it is not possible to distinguish the random A2 (W-type) structure from the ordered B2 (CsCl-type) structure with commonly used x-ray sources. Synchrotron radiation based anomalous x-ray diffraction overcomes this problem. It is shown that as grown thin films and 300 K post annealed films exhibit the A2 structure with a random distribution of Co and Fe. In contrast, films annealed at 400 K adopt the ordered B2 structure.

Gloskovskii, Andrei; Stryganyuk, Gregory; Ouardi, Siham [Institut fuer Anorganische und Analytische Chemie, Johannes Gutenberg-Universitaet, 55099 Mainz (Germany); Fecher, Gerhard H.; Felser, Claudia [Institut fuer Anorganische und Analytische Chemie, Johannes Gutenberg-Universitaet, 55099 Mainz (Germany); Max Planck Institute for Chemical Physics of Solids, D-01187 Dresden (Germany); Hamrle, Jaroslav; Pistora, Jaromir [Department of Physics and Nanotechnology Centre, VSB-Technical University of Ostrava, 70833 Ostrava (Czech Republic); Bosu, Subrojati; Saito, Kesami; Sakuraba, Yuya; Takanashi, Koki [Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577 (Japan)

2012-10-01T23:59:59.000Z

476

Molecular orientation in soft matter thin films studied by resonant soft X-ray reflectivity  

SciTech Connect

We present a technique to study depth profiles of molecular orientation in soft matter thin films with nanometer resolution. The method is based on dichroism in resonant soft X-ray reflectivity using linear s- and p-polarization. It combines the chemical sensitivity of Near-Edge X-ray Absorption Fine Structure spectroscopy to specific molecular bonds and their orientation relative to the polarization of the incident beam with the precise depth profiling capability of X-ray reflectivity. We demonstrate these capabilities on side chain liquid crystalline polymer thin films with soft X-ray reflectivity data at the carbon K edge. Optical constants of the anisotropic refractive index ellipsoid were obtained from a quantitative analysis using the Berreman formalism. For films up to 50 nm thickness we find that the degree of orientation of the long axis exhibits no depth variation and isindependent of the film thickness.

Mezger, Markus; Jerome, Blandine; Kortright, Jeffrey B.; Valvidares, Manuel; Gullikson, Eric; Giglia, Angelo; Mahne, Nicola; Nannarone, Stefano

2011-01-12T23:59:59.000Z

477

Observation of isolated nanopores formed by patterned anodic oxidation of aluminum thin films  

SciTech Connect

We report the formation of confined nanometer-scale regions of porous anodic alumina from thin aluminum films. Confinement is achieved by masking a thin Al film with a sputtered SiO{sub 2} layer, patterned by nanoimprint lithography of a polystyrene transfer layer. Anodization in 0.3 molar oxalic acid creates vertically aligned pores that were imaged with a combination of focused ion beam milling and scanning electron microscopy. Triplets, pairs, and single pores were observed following the anodization of isolated mask features approximately 100 nm in diameter.

Huang Qiyu; Lye, W.-K.; Reed, Michael L. [School of Microelectronics, Shanghai Jiaotong University, 1954 Huashan Road, Shanghai 200030 (China); Department of Electrical and Computer Engineering University of Virginia, Charlottesville, Virginia 22904 (United States)

2006-06-05T23:59:59.000Z

478

Cathode limited charge transport and performance of thin-film rechargeable lithium batteries  

DOE Green Energy (OSTI)

Several types of thin-film rechargeable batteries based on lithium metal anodes and amorphous V{sub 2}O{sub 5} (aV{sub 2}O{sub 5}), LiMn{sub 2}O{sub 4}, and LiCoO{sub 2} cathodes have been investigated in this laboratory. In all cases, the current density of these cells is limited by lithium ion transport in the cathodes. This paper, discusses sources of this impedance in Li-aV{sub 2}O{sub 5} and Li-LiMn{sub 2}O{sub 4} thin-film cells and their effect on cell performance.

Bates, J.B.; Hart, F.X.; Lubben, D.; Kwak, B.S.; van Zomeren, A.

1994-11-01T23:59:59.000Z

479

Investigations of CuInSe sub 2 thin films and contacts  

DOE Green Energy (OSTI)

This report describes research into electrical contacts for copper indium diselenide (CuInSe{sub 2}) polycrystalline thin films used for solar cell applications. Molybdenum contacts have historically been the most promising for heterojunction solar cells. This program studied contact stability by investigating thermally induced bilayer reactions between molybdenum and copper, indium, and selenium. Because selenization is widely used to fabricate CuInSe{sub 2} thin films for photovoltaic cells, a second part of the program investigated how the morphologies, phases, and reactions of pre-selenization Cu-In structures are affected by the deposition process and heat treatments. 7 refs., 6 figs.

Nicolet, M.A. (California Inst. of Tech., Pasadena, CA (United States))

1991-10-01T23:59:59.000Z

480

Separation of Hydrogen Using an Electroless Deposited Thin-Film Palladium-Ceramic Composite Membrane  

DOE Green Energy (OSTI)

The primary objective of this project was to prepare and characterize a hydrogen permselective palladium-ceramic composite membrane for high temperature gas separations and catalytic membrane reactors. Electroless plating method was used to deposit a thin palladium film on microporous ceramic substrate. The objective of this paper is to discuss the preparation and characterization of a thin-film palladium-ceramic composite membrane for selective separation of hydrogen at elevated temperatures and pressures. In this paper, we also present a model to describe the hydrogen transport through the palladium-ceramic composite membrane in a cocurrent flow configuration.

Ilias, S.; King, F.G.; Fan, Ting-Fang; Roy, S. [North Carolina Agricultural and Technical State Univ., Greensboro, NC (United States). Dept. of Chemical Engineering

1996-12-31T23:59:59.000Z

Note: This page contains sample records for the topic "thin film iii-v" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Optimizing diode thickness for thin-film solid state thermal neutron detectors  

Science Conference Proceedings (OSTI)

In this work, we investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. We evaluate several diode materials, Si, CdTe, GaAs, C (diamond), and ZnO, and two neutron converter materials, {sup 10}B and {sup 6}LiF. Investigating a coplanar diode/converter geometry, we determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials.

Murphy, John W.; Mejia, Israel; Quevedo-Lopez, Manuel A.; Gnade, Bruce [Department of Materials and Science, University of Texas at Dallas, Richardson, Texas 75080 (United States); Kunnen, George R.; Allee, David [Flexible Display Center at Arizona State University, Tempe, Arizona 85284 (United States)

2012-10-01T23:59:59.000Z

482

Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors  

DOE Patents (OSTI)

A standard thin film circuit containing Ta.sub.2 N (100 ohms/square) resirs is fabricated by depositing on a dielectric substrate successive layers of Ta.sub.2 N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standeard TFN manufacturing process enables the formation of Ta.sub.2 N+Ti (10 ohms/square) and Ta.sub.2 N+Ti+Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure.

Norwood, David P. (Albuquerque, NM)

1989-01-01T23:59:59.000Z

483

Thin film growth and characterization of Potassium-Tantalate-Niobate room temperature ferroelectric  

E-Print Network (OSTI)

The primary objective in fabricating ferroelectric thin films is to duplicate the polar properties and characteristics of the corresponding bulk material. Potassium Tantalate-Niobate (KTN), KTa(,-,)Nb,03-, is a continuous solid solution between the perovskite compounds KNbO3 and KTaO3. The Curie temperature of KTN can be varied by a4justing x i.e.., the composition of niobium. In the vicinity of the ferroto-paraelectric phase transition, high dielectric permittivities, large pyroelectric as well as electro-optical and nonlinear optical coefficients can be observed. Bulk KTN single crystals synthesized from high temperature melts have limited device utility due to the occurence of lamellar growth, twins, etc. For these reasons thin films of KTN find enormous applications in spatial light modulators., pyroelectric devices, holographic storage., parametric oscillators and variable delay lines. The research undertaken involved the growth of KTN thin films on lattice matched substrates. The preferential groath directions, optimum growth conditions, ideal charge composition, and ideal regime in phase diagram were established. Liquidphase epitaxy (LPE) was the technique employed for the growth of thin films. The as grown films were optically and electrically characterized.

Muntha, Nageswara Rao Venkat

1995-01-01T23:59:59.000Z

484