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Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Thin film photovoltaic device  

DOE Patents (OSTI)

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

Catalano, A.W.; Bhushan, M.

1982-08-03T23:59:59.000Z

2

Thin film photovoltaic device  

DOE Patents (OSTI)

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

Catalano, Anthony W. (Wilmington, DE); Bhushan, Manjul (Wilmington, DE)

1982-01-01T23:59:59.000Z

3

Institute of Photo Electronic Thin Film Devices and Technology...  

Open Energy Info (EERE)

Institute of Photo Electronic Thin Film Devices and Technology of Nankai University Jump to: navigation, search Name: Institute of Photo-Electronic Thin Film Devices and Technology...

4

Enhanced Thin Film Organic Photovoltaic Devices  

A novel structure design for thin film organic photovoltaic (OPV) devices provides a system for increasing the optical absorption in the active layer. The waveguided structure permits reduction of the active layer thickness, resulting in enhanced charge collection and extraction, leading to improved power conversion efficiency compared to standard OPV devices....

2014-01-10T23:59:59.000Z

5

Thin film photovoltaic device with multilayer substrate  

DOE Patents (OSTI)

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Catalano, Anthony W. (Rushland, PA); Bhushan, Manjul (Wilmington, DE)

1984-01-01T23:59:59.000Z

6

Fabrication and testing of thermoelectric thin film devices  

SciTech Connect

Two thin-film thermoelectric devices are experimentally demonstrated. The relevant thermal loads on the cold junction of these devices are determined. The analytical form of the equation that describes the thermal loading of the device enables one to model the performance based on the independently measured electronic properties of the films forming the devices. This model elucidates which parameters determine device performance, and how they can be used to maximize performance.

Wagner, A.V.; Foreman, R.J.; Summers, L.J.; Barbee, T.W. Jr.; Farmer, J.C. [Lawrence Livermore National Lab., CA (United States). Chemistry and Materials Science Dept.

1996-03-01T23:59:59.000Z

7

Monolithic integration of thin-film coolers with optoelectronic devices  

E-Print Network (OSTI)

Monolithic integration of thin-film coolers with optoelectronic devices Christopher La Barbara, California 93106-9560 Abstract. Active refrigeration of optoelectronic components through the use manuscript received June 30, 2000; accepted for publication June 30, 2000. 1 Introduction Optoelectronic

8

A thin film transistor driven microchannel device  

E-Print Network (OSTI)

= [8] 25 where n = 4 for the ideal case. However, based on experimental results, typical values for n are between 1 and 2.22 In any case, the larger potential drop appears at the smaller electrode. 2.4. PECVD Thin Film Silicon nitride film... can be deposited by a low-pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD). Table II shows a comparison of silicon nitride?s physical properties between two deposition methods. The PECVD silicon...

Lee, Hyun Ho

2005-02-17T23:59:59.000Z

9

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

10

Institute of Photo Electronic Thin Film Devices and Technology of Nankai  

Open Energy Info (EERE)

Electronic Thin Film Devices and Technology of Nankai Electronic Thin Film Devices and Technology of Nankai University Jump to: navigation, search Name Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University Place Tianjin Municipality, China Zip 300071 Sector Solar Product A thin-film solar cell research institute in China. References Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University is a company located in Tianjin Municipality, China . References ↑ "Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University"

11

Alta Devices Develops World Record Setting Thin-Film Solar Cell  

Office of Energy Efficiency and Renewable Energy (EERE)

EERE supported the development of Alta Devices' thin film Gallium Arsenide photovoltaic technology that set a world record for conversion efficiency.

12

Apparatus and Method for Fabricating Thin Film Devices using...  

NLE Websites -- All DOE Office Websites (Extended Search)

method for manufacturing thin-films was developed specifically for fabrication of CdSCdTe photovoltaic modules. However, this innovation should perform excellently for any...

13

Oriented niobate ferroelectric thin films for electrical and optical devices  

DOE Patents (OSTI)

Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or cyrstalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

Wessels, Bruce W. (Wilmette, IL); Nystrom, Michael J. (Chicago, IL)

2001-01-01T23:59:59.000Z

14

Thin film lithium-based batteries and electrochromic devices fabricated with nanocomposite electrode materials  

DOE Patents (OSTI)

Thin-film lithium-based batteries and electrochromic devices (10) are fabricated with positive electrodes (12) comprising a nanocomposite material composed of lithiated metal oxide nanoparticles (40) dispersed in a matrix composed of lithium tungsten oxide.

Gillaspie, Dane T; Lee, Se-Hee; Tracy, C. Edwin; Pitts, John Roland

2014-02-04T23:59:59.000Z

15

Highly Ordered Vertical Silicon Nanowire Array Composite Thin Films for Thermoelectric Devices  

E-Print Network (OSTI)

Highly Ordered Vertical Silicon Nanowire Array Composite Thin Films for Thermoelectric Devices for thermoelectric devices are presented. Inter- ference lithography was used to pattern square lattice photoresist. The Si NW arrays were embedded in SOG to form a dense and robust composite material for device

Bowers, John

16

Method of making suspended thin-film semiconductor piezoelectric devices  

DOE Patents (OSTI)

A process for forming a very thin suspended layer of piezoelectric material of thickness less than 10 microns. The device is made from a combination of GaAs and AlGaAs layers to form either a sensor or an electronic filter. Onto a GaAs substrate is epitaxially deposited a thin (1-5 micron) sacrificial AlGaAs layer, followed by a thin GaAs top layer. In one embodiment the substrate is selectively etched away from below until the AlGaAs layer is reached. Then a second selective etch removes the sacrificial AlGaAs layer, that has acted here as an etch stop, leaving the thin suspended layer of piezoelectric GaAs. In another embodiment, a pattern of small openings is etched through the thin layer of GaAs on top of the device to expose the sacrificial AlGaAs layer. A second selective etch is done through these openings to remove the sacrificial AlGaAs layer, leaving the top GaAs layer suspended over the GaAs substrate. A novel etchant solution containing a surface tension reducing agent is utilized to remove the AlGaAs while preventing buildup of gas bubbles that would otherwise break the thin GaAs layer.

Casalnuovo, Stephen A. (Albuquerque, NM); Frye-Mason, Gregory C. (Cedar Crest, NM)

2001-01-01T23:59:59.000Z

17

Amorphous silicon thin film transistor as nonvolatile device.  

E-Print Network (OSTI)

particles before loaded into the deposition chamber. 2.2.2. Equipment for Plasma Processes Plasma-Enhanced Chemical Vapor...: Dr. Yue Kuo n-channel and p-channel amorphous-silicon thin-film transistors (a-Si:H TFTs) with copper electrodes prepared by a novel plasma etching process have been fabricated and studied. Their characteristics are similar to those of TFTs...

Nominanda, Helinda

2008-10-10T23:59:59.000Z

18

Thin film optical waveguide and optoelectronic device integration for fully embedded board level optical interconnects  

E-Print Network (OSTI)

Thin film optical waveguide and optoelectronic device integration for fully embedded board level on to the waveguide film. Measured propagation loss of the waveguide was 0.3dB/cm at 850nm. Keywords: optoelectronic between electronic and optoelectronic components as conventional approaches do, and additionally, real

Chen, Ray

19

Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics  

E-Print Network (OSTI)

nanowire networks as window layers in thin film solar cells.window layer for fully solution-deposited thin filmITO) thin films by silver nanowire composite window layers

Chung, Choong-Heui

2012-01-01T23:59:59.000Z

20

Method and apparatus for increasing the durability and yield of thin film photovoltaic devices  

DOE Patents (OSTI)

Thin film photovoltaic cells having a pair of semiconductor layers between an opaque and a transparent electrical contact are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device.

Phillips, James E. (Newark, DE); Lasswell, Patrick G. (Newark, DE)

1987-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Thin Film Materials and Processing Techniques for a Next Generation Photovoltaic Device: Cooperative Research and Development Final Report, CRADA Number CRD-12-470  

SciTech Connect

This research extends thin film materials and processes relevant to the development and production of a next generation photovoltaic device.

van Hest, M.

2013-08-01T23:59:59.000Z

22

High efficiency thin-film multiple-gap photovoltaic device  

DOE Patents (OSTI)

A photovoltaic device includes at least two solar cells made from Group IV elements or their alloys in the amorphous state mounted on a substrate. The outermost or first cell has a larger bandgap than the second cell. Various techniques are utilized to improve the efficiency of the device.

Dalal, Vikram L. (Newark, DE)

1983-01-01T23:59:59.000Z

23

Optoelectronics Devices Based on Zinc Oxide Thin Films and Nanostructures  

E-Print Network (OSTI)

is promising for UV optoelectronics, such as photodetectors,for future ZnO optoelectronics. References Ü. Özgür, Ya. I.OF THE DISSERTATION Optoelectronics Devices Based on Zinc

Chu, Sheng

2011-01-01T23:59:59.000Z

24

Method and apparatus for increasing the durability and yield of thin film photovoltaic devices  

DOE Patents (OSTI)

Thin film photovoltaic cells having a pair of semiconductor layers between an opaque and a transparent electrical contact are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device. 10 figs.

Phillips, J.E.; Lasswell, P.G.

1987-02-03T23:59:59.000Z

25

Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films  

DOE Patents (OSTI)

Sr{sub x}Ba{sub 1{minus}x}Nb{sub 2}O{sub 6}, where x is greater than 0.25 and less than 0.75, and KNbO{sub 3} ferroelectric thin films metalorganic chemical vapor deposited on amorphous or crystalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface are disclosed. Such films can be used in electronic, electro-optic, and frequency doubling components. 8 figs.

Wessels, B.W.; Nystrom, M.J.

1998-05-19T23:59:59.000Z

26

Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films  

DOE Patents (OSTI)

Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or crystalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.

Wessels, Bruce W. (Wilmette, IL); Nystrom, Michael J. (Germantown, MD)

1998-01-01T23:59:59.000Z

27

Fourier Transform Luminescence Spectroscopy of Semiconductor Thin Films and Devices  

SciTech Connect

We have been successful in adapting Fourier transform (FT) Raman accessories and spectrophotometers for sensitive measurements of the photoluminescence (PL) spectra of photovoltaic materials and devices. In many cases, the sensitivity of the FT technique allows rapid room-temperature measurements of weak luminescence spectra that cannot be observed using dispersive PL spectrophotometers. We present here the results of a number of studies of material and device quality obtained using FT-luminescence spectroscopy, including insights into bandgap variations, defect and impurity effects, and relative recombination rates. We also describe our approach to extending the range of the FT-Raman spectrophotometer to cover the region from 11,500 to 3700 cm-1, enabling FT-luminescence measurements to be made from 1.42 to 0.46 eV, and our investigation of FT-PL microspectroscopy.

Webb, J. D.; Keyes, B. M.; Ahrenkiel, R. K.; Wanlass, M. W.; Ramanathan, K.; Gedvilas, L. M.; Olson, M. R.; Dippo, P.; Jones, K. M.

1999-07-12T23:59:59.000Z

28

Deposition of tungsten nitride thin films by plasma focus device at different axial and angular positions  

Science Journals Connector (OSTI)

Tungsten nitride thin films were deposited on stainless steel–304 substrates by using a low energy (2 kJ) Mather type plasma focus device. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and microhardness are used to study the surface of treated samples. The XRD analysis shows that the degree of crystallinity of deposited thin films strongly depends on axial and angular positions of samples. The SEM micrographs of the deposited films at different angular positions (0°, 10° and 30°) and axial position of 8 cm show that the content of WN sub-micro crystalline structures on the surface of deposited films decreased with increasing the angle with respect to anode axis. From AFM results we observe that for the sample deposited at 8 cm and 0° axial and angular positions, respectively, the most uniform surface and the most homogenous distribution of grains are obtained. Also the hardness results show that the highest mechanical hardness is obtained when the film is deposited at 8 cm and 0° axial and angular positions, respectively.

M.T. Hosseinnejad; M. Ghoranneviss; G.R. Etaati; M. Shirazi; Z. Ghorannevis

2011-01-01T23:59:59.000Z

29

Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device  

Science Journals Connector (OSTI)

Abstract Thin films of TiCx/SiC/a-C:H were synthesized on Si substrates using a complex mix of high energy density plasmas and instability accelerated energetic ions of filling gas species, emanated from hot and dense pinched plasma column, in dense plasma focus device. The conventional hollow copper anode of Mather type plasma focus device was replaced by solid titanium anode for synthesis of TiCx/SiC/a-C:H nanocomposite thin films using CH4:Ar admixture of (1:9, 3:7 and 5:5) for fixed 20 focus shots as well as with different number of focus shots with fixed CH4:Ar admixture ratio 3:7. XRD results showed the formation of crystalline TiCx/SiC phases for thin film synthesized using different number of focus shots with CH4:Ar admixture ratio fixed at 3:7. SEM results showed that the synthesized thin films consist of nanoparticle agglomerates and the size of agglomerates depended on the CH4:Ar admixture ratio as well as on the number of focus shots. Raman analysis showed the formation of polycrystalline/amorphous Si, SiC and a-C for different CH4:Ar ratio as well as for different number of focus shots. The XPS analysis confirmed the formation of TiCx/SiC/a-C:H composite thin film. Nanoindentation results showed that the hardness and elastic modulus values of composite thin films increased with increasing number of focus shots. Maximum values of hardness and elastic modulus at the surface of the composite thin film were found to be about 22 and 305 GPa, respectively for 30 focus shots confirming the successful synthesis of hard composite TiCx/SiC/a-C:H coatings.

Z.A. Umar; R.S. Rawat; K.S. Tan; A.K. Kumar; R. Ahmad; T. Hussain; C. Kloc; Z. Chen; L. Shen; Z. Zhang

2013-01-01T23:59:59.000Z

30

Micro/nano devices fabricated from Cu-Hf thin films  

DOE Patents (OSTI)

An all-metal microdevice or nanodevice such as an atomic force microscope probe is manufactured from a copper-hafnium alloy thin film having an x-ray amorphous microstructure.

Luber, Erik J; Ophus, Colin; Mitlin, David; Olsen, Brian; Harrower, Christopher; Radmilovi, Velimir

2013-06-04T23:59:59.000Z

31

Processing and modeling issues for thin-film solar cell devices. Annual subcontract report, January 16, 1994--January 15, 1995  

SciTech Connect

This report describes results achieved during the second phase of a four year subcontract to develop and understand thin film solar cell technology related to a-Si and its alloys, CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2}, and CdTe. Accomplishments during this phase include, development of equations and reaction rates for the formation of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} films by selenization, fabrication of a 15% efficient CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} cell, development of a reproducible, reliable Cu-diffused contact to CdTe, investigation of the role of CdTe-CdS interdiffusion on device operation, investigation of the substitution of HCl for CdCl{sub 2} in the post-deposition heat treatment of CdTe/CdS, demonstration of an improved reactor design for deposition of a-Si films, demonstration of improved process control in the fabrication of a ten set series of runs producing {approximately}8% efficient a-Si devices, demonstration of the utility of a simplified optical model for determining quantity and effect of current generation in each layer of a triple stacked a-Si cell, presentation of analytical and modeling procedures adapted to devices produced with each material system, presentation of baseline parameters for devices produced with each material system, and various investigations of the roles played by other layers in thin film devices including the Mo underlayer, CdS and ZnO in CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} devices, the CdS in CdTe devices, and the ZnO as window layer and as part of the back surface reflector in a-Si devices. In addition, collaborations with over ten research groups are briefly described. 73 refs., 54 figs., 34 tabs.

Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Hegedus, S.S.; McCandless, B.E.; Shafarman, W.N. [Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion

1995-06-01T23:59:59.000Z

32

Synthesis of nanostructured multiphase (Ti,Al)N/a-Si3N4 thin films using dense plasma focus device  

Science Journals Connector (OSTI)

A 2.3 kJ pulsed plasma focus device was used to prepare thin films of nc-(Ti,Al)N/a-Si3N4 at room temperature. The plasma focus device, fitted with copper anode encapsulated with Ti0.5Al0.5 anode, was operated with nitrogen as the filling gas. Films were deposited with various number of focus shots, at 90 mm from top of the anode and at zero angular position with respect to anode axis. XRD patterns show the growth of polycrystalline (Ti,Al)N thin films with orientations in the (1 1 1), (2 0 0), (2 2 0) and (3 1 1) crystallographic planes. Behavior of lattice constant, grain size and film roughness of deposited film as a function of variation in number of focus shots is discussed. SEM micrographs of film deposited with 15 number of focus shots exhibit well-developed net like structure of nc-(Ti,Al)N/a-Si3N4 and possibly nc-(Ti,Al)N/a-Si3N4/a-AlN or nc-TiN/a-Si3N4/a-AlN. Surface Roughness ranging 64 nm to 89 nm was also observed.

Tousif Hussain; R. Ahmad; Nida Khalid; Z.A. Umar; A. Hussnain

2011-01-01T23:59:59.000Z

33

Simulation of nanostructure-based and ultra-thin film solar cell devices beyond the classical picture  

E-Print Network (OSTI)

In this paper, an optoelectronic device simulation framework valid for arbitrary spatial variation of electronic potentials and optical modes, and for transport regimes ranging from ballistic to diffusive, is used to study non-local photon absorption, photocurrent generation and carrier extraction in ultra-thin film and nanostructure-based solar cell devices at the radiative limit. Among the effects that are revealed by the microscopic approach and which are inaccessible to macroscopic models is the impact of structure, doping or bias induced nanoscale potential variations on the local photogeneration rate and the photocarrier transport regime.

Aeberhard, Urs

2014-01-01T23:59:59.000Z

34

Method for making photovoltaic devices using oxygenated semiconductor thin film layers  

DOE Patents (OSTI)

A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

Johnson, James Neil; Albin, David Scott; Feldman-Peabody, Scott; Pavol, Mark Jeffrey; Gossman, Robert Dwayne

2014-12-16T23:59:59.000Z

35

ThinFilms  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Films Thin Films Manufacturing Technologies The Thin Film laboratory provides a variety of vapor deposition processes and facilities for cooperative research and development. Available capabilities include electron beam evaporation, sputter deposition, reactive deposi- tion processes, atomic layer deposition (ALD) and specialized techniques such as focused ion beam induced chemical vapor deposition. Equipment can be reconfigured for prototyping, or it can be dedicated to long-term research, development and manufacturing. Most sputter and evaporative deposition systems are capable of depositing multiple materials. Deposition capabilities and expertise * Deposition of a large variety of thin film mate- rials * Multiple sputter deposition systems - Capable of depositing four materials in a

36

Thin film hydrogen sensor  

DOE Patents (OSTI)

A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

1999-03-23T23:59:59.000Z

37

Thin film hydrogen sensor  

DOE Patents (OSTI)

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

Cheng, Yang-Tse (Rochester Hills, MI); Poli, Andrea A. (Livonia, MI); Meltser, Mark Alexander (Pittsford, NY)

1999-01-01T23:59:59.000Z

38

Thin-film Lithium Batteries  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin-Film Battery with Lithium Anode Courtesy of Oak Ridge National Laboratory, Materials Science and Technology Division Thin-Film Lithium Batteries Resources with Additional Information The Department of Energy's 'Oak Ridge National Laboratory (ORNL) has developed high-performance thin-film lithium batteries for a variety of technological applications. These batteries have high energy densities, can be recharged thousands of times, and are only 10 microns thick. They can be made in essentially any size and shape. Recently, Teledyne licensed this technology from ORNL to make batteries for medical devices including electrocardiographs. In addition, new "textured" cathodes have been developed which have greatly increased the peak current capability of the batteries. This greatly expands the potential medical uses of the batteries, including transdermal applications for heart regulation.'

39

SAW determination of surface area of thin films  

DOE Patents (OSTI)

N.sub.2 adsorption isotherms are measured from thin films on SAW devices. The isotherms may be used to determine the surface area and pore size distribution of thin films.

Frye, Gregory C. (Albuquerque, NM); Martin, Stephen J. (Albuquerque, NM); Ricco, Antonio J. (Albuquerque, NM)

1990-01-01T23:59:59.000Z

40

SINGLE AND DUAL LAYER THIN FILM BULGE TESTING  

E-Print Network (OSTI)

film windows that are used in Next Generation Lithography masks and certain MEMS devices. The bulge testing method measures the mechanical properties of a thin film by isolating it in a thin film window of the system. Figure 6 Dual Layer Thin Film Membrane Window For a dual layer membrane the effective total

Huston, Dryver R.

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Thin Film Photovoltaics Research  

Energy.gov (U.S. Department of Energy (DOE))

The U.S. Department of Energy (DOE) supports research and development of four thin-film technologies on the path to achieving cost-competitive solar energy, including:

42

High Seebeck effects from conducting polymer: Poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) based thin-film device with hybrid metal/polymer/metal architecture  

SciTech Connect

Conductive polymers are of particular interest for thermoelectric applications due to their low thermal conductivity and relatively high electrical conductivity. In this study, commercially available conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) was used in a hybrid metal/polymer/metal thin film design in order to achieve a high Seebeck coefficient with the value of 252lV/k on a relatively low temperature scale. Polymer film thickness was varied in order to investigate its influence on the Seebeck effect. The high Seebeck coefficient indicates that the metal/polymer/metal design can develop a large entropy difference in internal energy of charge carriers between high and low-temperature metal electrodes to develop electrical potential due to charge transport in conducting polymer film through metal/polymer interface. Therefore, the metal/polymer/metal structure presents a new design to combine inorganic metals and organic polymers in thin-film form to develop Seebeck devices

Stanford, Michael G [ORNL; Wang, Hsin [ORNL; Ivanov, Ilia N [ORNL; Hu, Bin [University of Tennessee, Knoxville (UTK)

2012-01-01T23:59:59.000Z

43

Spatial Frequency Filtering Using Nondelineated Thin Films  

Science Journals Connector (OSTI)

We present a new approach for achieving spatial frequency filtering in the analog domain. Our device, the Thin Film Spatial Filter, is a hybrid structure which combines the strengths of analog VLSI technology with the simplicity of a continuous sheet ...

J. Mcelvain; J. Langan; A. J. Heeger

1997-10-01T23:59:59.000Z

44

Visible spectrometer utilizing organic thin film absorption  

E-Print Network (OSTI)

In this thesis, I modeled and developed a spectrometer for the visible wavelength spectrum, based on absorption characteristics of organic thin films. The device uses fundamental principles of linear algebra to reconstruct ...

Tiefenbruck, Laura C. (Laura Christine)

2004-01-01T23:59:59.000Z

45

Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics  

E-Print Network (OSTI)

CuIn(Se,S) 2 solar cell with a PCE of 11.1% under dark andpower conversion efficiency (PCE) of around 20% among thinAchievement of such high PCE can be largely ascribed to the

Chung, Choong-Heui

2012-01-01T23:59:59.000Z

46

Magneto-optical oxide thin films and integrated nonreciprocal photonic devices  

E-Print Network (OSTI)

Nonreciprocal photonic devices including optical isolators and optical circulators are indispensible components in present day optical communication systems. Although highly desired by the fast development of silicon ...

Bi, Lei, Ph.D. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

47

Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization  

DOE Patents (OSTI)

Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

Tuttle, John R. (Denver, CO); Contreras, Miguel A. (Golden, CO); Noufi, Rommel (Golden, CO); Albin, David S. (Denver, CO)

1994-01-01T23:59:59.000Z

48

Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization  

DOE Patents (OSTI)

Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

Tuttle, J.R.; Contreras, M.A.; Noufi, R.; Albin, D.S.

1994-10-18T23:59:59.000Z

49

Processing Materials Devices and Diagnostics for Thin Film Photovoltaics: Fundamental and Manufacturability Issues; Final Report, 5 September 2001 - 31 May 2008  

NLE Websites -- All DOE Office Websites (Extended Search)

20-45545 20-45545 April 2009 Processing Materials Devices and Diagnostics for Thin Film Photovoltaics: Fundamental and Manufacturability Issues Final Report 1 March 2005 - 30 November 2008 R.W. Birkmire, W.N. Shafarman, E. Eser, S.S. Hegedus, B.E. McCandless, K.D. Dobson, and S. Bowden University of Delaware Newark, Delaware National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, Colorado 80401-3393 303-275-3000 * www.nrel.gov NREL is a national laboratory of the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy Operated by the Alliance for Sustainable Energy, LLC Contract No. DE-AC36-08-GO28308 Subcontract Report NREL/SR-520-45545 April 2009 Processing Materials Devices and Diagnostics for Thin Film Photovoltaics: Fundamental and

50

NMR characterization of thin films  

DOE Patents (OSTI)

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

Gerald, II, Rex E. (Brookfield, IL); Klingler, Robert J. (Glenview, IL); Rathke, Jerome W. (Homer Glen, IL); Diaz, Rocio (Chicago, IL); Vukovic, Lela (Westchester, IL)

2008-11-25T23:59:59.000Z

51

Thin film photovoltaic cell  

DOE Patents (OSTI)

A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

Meakin, John D. (Newark, DE); Bragagnolo, Julio (Newark, DE)

1982-01-01T23:59:59.000Z

52

Novel Approach for Correlating Capacitance Data with Performance During Thin-Film Device Stress Studies: Preprint  

SciTech Connect

A new data mining algorithm was developed to identify the strongest correlations between capacitance data (measured between -1.5 V and +0.49 V) and 1st and 2nd level performance metrics (efficiency, open-circuit voltage (VOC), short-circuit current density (JSC), and fill-factor (FF)) during the stress testing of voltage-stabilized CdS/CdTe devices. When considering only correlations between 1st and 2nd level metrics, 96.5% of the observed variation in efficiency was attributed to FF. The overall decrease in VOC after 1000 hours of open-circuit, light-soak stress at 60 degrees C was about 1.5%. As determined by our algorithm, the most consistent correlation existing between FF and 3rd level metric capacitance data at all stages during stress testing was between FF and the apparent CdTe acceptor density (Na) calculated at a voltage of +0.49 V during forward voltage scans. Since the contribution of back contact capacitance to total capacitance increases with increasing positive voltage, this result suggests that FF degradation is associated with decreases in Na near the CdTe/back contact interface. Also of interest, it appears that capacitance data at these higher voltages appears to more accurately fit the one-sided abrupt junction model.

Graham, R. L.; Albin, D. S.; Clark, L. A.

2011-08-01T23:59:59.000Z

53

Characterization of recombination processes in epitaxial thin films and substrates for antimonide based thermophotovoltaic devices  

SciTech Connect

Recombination processes in antimonide-based materials for thermophotovoltaic (TPV) devices have been investigated using a radio-frequency (RF) photoreflectance technique, in which a Nd-YAG pulsed laser is used to excite excess carriers, and the short-pulse response and photoconductivity decay are monitored with an inductively-coupled non-contacting RF probe. Double-capped lattice-matched GaInAsSb organometallic vapor phase epitaxy (OMVPE)--grown layers on GaSb substrates have been used to evaluate bulk lifetime and surface recombination velocity with different layer thicknesses. With an active layer doping of 2 {times} 10{sup 17} cm{sup {minus}3}, effective bulk lifetimes of 95 ns and surface recombination velocities of 1,900 cm/s have been obtained. As the laser intensity is increased the lifetime decreases, which may be indicative of radiative recombination under these high level injection conditions. Similar measurements have been taken on both commercially available GaSb boules as well as in-house grown quaternary GaInAsSb boules. A two-step decay is observed with the quaternary boules, an initial decay of nominally 15 ns which is relatively independent of laser intensity and a second decay of 30--60 ns which increases with decreasing laser intensity. This behavior may be indicative of free charge separation as a result of short-range ordering in the quaternary crystals. GaSb boules, both commercially available and those grown in-house, exhibit more classical characteristics.

Saroop, S.; Borrego, J.; Gutmann, R.; Dutta, P.; Ostrogorsky, A. [Rensselaer Polytechnic Inst., Troy, NY (United States). Center for Integrated Electronics and Electronics Manufacturing; Charache, G. [Lockheed Martin Inc., Schenectady, NY (United States); Wang, C. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.

1998-06-01T23:59:59.000Z

54

Fabrication of magnesium silicide thin films by pulsed ion beam ablation in a 1.6 kJ plasma focus device  

Science Journals Connector (OSTI)

The production of magnesium silicide (Mg2Si) thin films on silicon (1 0 0) at room temperature using a low energy (1.6 kJ) plasma focus device is reported. The conventional hollow copper anode is replaced by anode fitted with solid magnesium top and the deposition is done using different numbers of deposition shots (5, 10, 15 and 20). The interaction of the high energy magnesium ion beams with silicon (1 0 0) substrates using different number of deposition shots, result in the formation of surface coatings, with different characteristic structures and morphologies. X-ray diffraction (XRD) analysis reveals that crystal structure characteristics of obtained thin films strongly depend on number of deposition shots. The structure growth and variation in surface smoothness with increasing of deposition shots is revealed by scanning electron microscope (SEM) micrographs and atomic force microscopy (AFM) images. Moreover, AFM results revealed that the distribution of grain sizes on the surface of samples and surface roughness of deposited thin films increase with the number of deposition shots. Also the average thickness of deposited samples tested with surface profiler.

M.T. Hosseinnejad; Mahmood Ghoranneviss; G. Reza Etaati; Farhad Shahgoli

2013-01-01T23:59:59.000Z

55

Modeling and control of thin film surface morphology: application to thin film solar cells  

E-Print Network (OSTI)

materials, thin film solar cell technology stands to benefitThin-film solar cells: Review of materials, technologies and

Huang, Jianqiao

2012-01-01T23:59:59.000Z

56

Lowering of L10 phase transition temperature of FePt thin films by single shot H+ ion exposure using plasma focus device  

Science Journals Connector (OSTI)

FePt thin films are exposed to pulsed energetic H+ ion beam from plasma focus. In irradiated films, the phase transition from the low Ku disordered face-centered-cubic structure to high Ku ordered face-centered-tetragonal phase was achieved at 400 °C with the order parameter S ranging from 0.73 to 0.83, high coercivity of about 5356 kA/m, high negative nucleation field of about 7700 kA/m and high squareness ratio ranging from 0.73 to 0.79. The advantage of using plasma focus device is that it can lower phase transition temperature and significantly enhance the magnetic properties by a pulsed single shot exposure.

Z.Y. Pan; J.J. Lin; T. Zhang; S. Karamat; T.L. Tan; P. Lee; S.V. Springham; R.V. Ramanujan; R.S. Rawat

2009-01-01T23:59:59.000Z

57

Thin film hydrogen sensor  

DOE Patents (OSTI)

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

Lauf, Robert J. (Oak Ridge, TN); Hoffheins, Barbara S. (Knoxville, TN); Fleming, Pamela H. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

58

Vibration welding system with thin film sensor  

DOE Patents (OSTI)

A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

2014-03-18T23:59:59.000Z

59

Study of GaN:Eu3+ Thin Films Deposited by Metallorganic  

E-Print Network (OSTI)

as an advantageous architecture for transparent electrodes in optoelectronic devices due primarily to high characteristics of electrodes in optoelectronic devices and in supercapactiors, we introduced oxide thin films

McKittrick, Joanna

60

Hybrid Thin Film Deposition System | EMSL  

NLE Websites -- All DOE Office Websites (Extended Search)

Hybrid Thin Film Deposition System Hybrid Thin Film Deposition System Only available at EMSL, the Discovery Deposition System has been customized to be a fully automated...

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Thin Film Solar Technologies | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Name: Thin Film Solar Technologies Place: South Africa Product: Producers of thin-film copper, indium, gallium, sulphur, selenium modules....

62

A high performance thin film thermoelectric cooler  

SciTech Connect

Thin film thermoelectric devices with small dimensions have been fabricated using microelectronics technology and operated successfully in the Seebeck mode as sensors or generators. However, they do not operate successfully in the Peltier mode as coolers, because of the thermal bypass provided by the relatively thick substrate upon which the thermoelectric device is fabricated. In this paper a processing sequence is described which dramatically reduces this thermal bypass and facilitates the fabrication of high performance integrated thin film thermoelectric coolers. In the processing sequence a very thin amorphous SiC (or SiO{sub 2}SiN{sub 4}) film is deposited on a silicon substrate using conventional thin film deposition and a membrane formed by removing the silicon substrate over a desired region using chemical etching or micro-machining. Thermoelements are deposited on the membrane using conventional thin film deposition and patterning techniques and configured so that the region which is to be cooled is abutted to the cold junctions of the Peltier thermoelements while the hot junctions are located at the outer peripheral area which rests on the silicon substrate rim. Heat is pumped laterally from the cooled region to the silicon substrate rim and then dissipated vertically through it to an external heat sink. Theoretical calculations of the performance of a cooler described above indicate that a maximum temperature difference of about 40--50K can be achieved with a maximum heat pumping capacity of around 10 milliwatts.

Rowe, D.M.; Min, G.; Volklein, F.

1998-07-01T23:59:59.000Z

63

CFN | Thin Films Group  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Synthesis and Characterization Facility Materials Synthesis and Characterization Facility Thin-Film Processing Facility Online Manager (FOM) website FOM manual ESR for lab 1L32 (High-Resolution SEM and x-ray microanalysis) CFN Operations Safety Awareness (COSA) form for 1L32 (ESR #1) Technical article on LABE detector (Analytical SEM) Request form for off-hours access (.doc, First time only, renewals done via email) Lab Tool capabilities Primary contact Training schedule Backup contact Booking calendar Booking rules SOP 1L32 Analytical SEM Camino Thurs 10-12 PM Stein FOM yes yes Hitachi S-4800 SEM Stein Tues 1-3 PM Black FOM no yes booking calendar: yes = need to reserve tool time in calendar before using tool booking rules: yes = specific rules exist for reserving tool time SOP = standard operating procedure (basic instructions)

64

Ferromagnetic thin films  

DOE Patents (OSTI)

A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

Krishnan, K.M.

1994-12-20T23:59:59.000Z

65

Influence of samaria doping on the resistance of ceria thin films...  

NLE Websites -- All DOE Office Websites (Extended Search)

doping on the resistance of ceria thin films and its implications to the planar oxygen sensing devices. Influence of samaria doping on the resistance of ceria thin films and...

66

NREL: Photovoltaics Research - Thin Film Photovoltaic Partnership Project  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed the United States to attain world leadership in this area of solar technology. Three national R&D teams focused on thin-film semiconductor materials: amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS) and its alloys. The Module Reliability Team and Environmental Health and Safety Team were crosscutting. The teams comprised researchers from the solar industry, academia, and NREL who focused their efforts on improving materials, devices, and manufacturing processes-all

67

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b  

E-Print Network (OSTI)

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b , Ounsi of an absorbing planar photonic crystal within a thin film photovoltaic cell. The devices are based on a stack with large areas. Keywords: Photonic crystal, Photovoltaic solar cell, Thin film solar cell, Hydrogenated

Paris-Sud XI, Université de

68

Low work function, stable thin films  

DOE Patents (OSTI)

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

2000-01-01T23:59:59.000Z

69

Integrated optical and electrical modeling of plasmon-enhanced thin film photovoltaics: A case-study on organic devices  

SciTech Connect

The nanoscale light control for absorption enhancement of organic photovoltaic (OPV) devices inevitably produces strongly non-uniform optical fields. These non-uniformities due to the localized optical modes are a primary route toward absorption enhancement in OPV devices. Therefore, a rigorous modeling tool taking into account the spatial distribution of optical field and carrier generation is necessary. Presented here is a comprehensive numerical model to describe the coupled optical and electrical behavior of plasmon-enhanced polymer:fullerene bulk heterojunction (BHJ) solar cells. In this model, a position-dependent electron-hole pair generation rate that could become highly non-uniform due to photonic nanostructures is directly calculated from the optical simulations. By considering the absorption and plasmonic properties of nanophotonic gratings included in two different popular device architectures, and applying the Poisson, current continuity, and drift/diffusion equations, the model predicts quantum efficiency, short-circuit current density, and desired carrier mobility ratios for bulk heterojunction devices incorporating nanostructures for light management. In particular, the model predicts a significant degradation of device performance when the carrier species with lower mobility are generated far from the collecting electrode. Consequently, an inverted device architecture is preferred for materials with low hole mobility. This is especially true for devices that include plasmonic nanostructures. Additionally, due to the incorporation of a plasmonic nanostructure, we use simulations to theoretically predict absorption band broadening of a BHJ into energies below the band gap, resulting in a 4.8% increase in generated photocurrent.

Rourke, Devin [Department of Physics, University of Colorado, Boulder, Colorado 80309-0390 (United States); Ahn, Sungmo [Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309-0425 (United States); Nardes, Alexandre M.; Lagemaat, Jao van de; Kopidakis, Nikos [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401 (United States); Park, Wounjhang, E-mail: won.park@colorado.edu [Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309-0425 (United States); Materials Science and Engineering Program, University of Colorado, Boulder, Colorado 80303 (United States)

2014-09-21T23:59:59.000Z

70

Advanced Light-Trapping in Thin-Film Silicon Solar Cells  

Science Journals Connector (OSTI)

Light-trapping schemes are essential for high efficiency thin-film Silicon devices. Implementation of various light-trapping/scattering elements will be discussed. An optimum textured...

Wyrsch, Nicolas

71

Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells  

E-Print Network (OSTI)

Thin-film silicon solar cell technology," Progress insolar cells: modeling, materials and device technology.technologies competitive with traditional wafer based solar cells,

Deceglie, Michael G.

2014-01-01T23:59:59.000Z

72

E-Print Network 3.0 - ag sn thin-film Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

solar... on a conventional metal-oxide transparent electrode. Thin-film optoelectronic devices make ... Source: Cui, Yi - Department of Materials Science and Engineering,...

73

Thin-Film Fiber Optic Sensors for Power Control and Fault Detection. Final Report  

SciTech Connect

Described is the development of an optical current measurement device, an active power conditioning system, and sol gel type thin films for the detection of magnetic fields.

Duncan, Paul Grems

2003-09-30T23:59:59.000Z

74

Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices  

E-Print Network (OSTI)

Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical ...

Bi, Lei

75

The insert of zinc oxide thin film in indium tin oxide anode for organic electroluminescence devices q  

E-Print Network (OSTI)

structure including a trans- parent anode, an organic active layer, and a metallic cathode. It has recently zinc oxide films have been actively investigated as alternate materials to ITO because zinc oxide consisted of Al as a cathode, Al2O3 as an electro transport layer, Alq3 as a luminously layer, TPD as a hole

Boo, Jin-Hyo

76

Vertically Aligned Nanocomposite Thin Films  

E-Print Network (OSTI)

nanocomposite oxides have attracted extensive research interest. Nanocomposites consist of nanosized particles embedded in different materials matrix.8 In recent years, high quality nanocrystalline materials have shown novel physical, chemical, magnetic....................................... 9 1.2.3 Physical properties of oxide thin films........................ 12 1.2.3.1 Electrical and optical properties................. 13 1.2.3.2 Magnetism and magnetotransport properties...

Bi, Zhenxing

2012-07-16T23:59:59.000Z

77

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network (OSTI)

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

78

Nitrogen doped zinc oxide thin film  

SciTech Connect

To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

Li, Sonny X.

2003-12-15T23:59:59.000Z

79

Thin film buried anode battery  

DOE Patents (OSTI)

A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

Lee, Se-Hee (Lakewood, CO); Tracy, C. Edwin (Golden, CO); Liu, Ping (Denver, CO)

2009-12-15T23:59:59.000Z

80

Electrochromism in copper oxide thin films  

E-Print Network (OSTI)

by a variety of routes, and electrochromic behavior has beenof Cu x O films, electrochromic devices based onbeen investigated. Unlike electrochromic devices based on

Richardson, Thomas J.; Slack, Jonathan L.; Rubin, Michael D.

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Zinc oxide thin film acoustic sensor  

SciTech Connect

This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah [Department of Physics , College of Science, Al-Mustansiriyah University, Baghdad (Iraq); Mansour, Hazim Louis [Department of Physics , College of Education, Al-Mustansiriyah University, Baghdad (Iraq)

2013-12-16T23:59:59.000Z

82

Ceramic Thin Films: Fabrication and Applications  

Science Journals Connector (OSTI)

...SPRAYED CERAMIC COATING, JOURNAL...PB1-XCAXTIO3 THIN-FILM GROWN BY...ELECTRICAL, OPTICAL, AND ELECTRO-OPTIC...fabrication and applications. | Ceramics...controlled optical switches...Ceramic coatings ofalumina...modified by the application of mechanical...material as a thin film cannot only...successive coatings. Although...respect to CVD that the...purposes. Applications of Thin Film Ceramics...

M. Sayer; K. Sreenivas

1990-03-02T23:59:59.000Z

83

Plasmonic Thin-Film Solar Cells  

Science Journals Connector (OSTI)

A combined computational-experimental study optimizing plasmon-enhanced absorption in thin film solar cells presented. We investigate the effect of different geometries where...

Pala, Ragip; White, Justin; Brongersma, Mark

84

Thin film solar energy collector  

DOE Patents (OSTI)

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

1983-11-22T23:59:59.000Z

85

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

86

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

87

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

88

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

89

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a  

E-Print Network (OSTI)

Universality of non-Ohmic shunt leakage in thin-film solar cells S. Dongaonkar,1,a J. D. Servaites thin-film solar cell types: hydrogenated amorphous silicon a-Si:H p-i-n cells, organic bulk understanding of thin film solar cell device physics, including important module performance variability issues

Alam, Muhammad A.

90

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making  

DOE Patents (OSTI)

A photovoltaic device is disclosed having a substrate, a layer of Cd[sub 2]SnO[sub 4] disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd[sub 2]SnO[sub 4], and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd[sub 2]SnO[sub 4] layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd[sub 2]SnO[sub 4], and depositing an electrically conductive film onto the thin film of semiconductor materials. 10 figs.

Wu, X.; Coutts, T.J.; Sheldon, P.; Rose, D.H.

1999-07-13T23:59:59.000Z

91

Thickness Dependency of Thin Film Samaria Doped Ceria for Oxygen...  

NLE Websites -- All DOE Office Websites (Extended Search)

Dependency of Thin Film Samaria Doped Ceria for Oxygen Sensing . Thickness Dependency of Thin Film Samaria Doped Ceria for Oxygen Sensing . Abstract: High temperature oxygen...

92

Direct Measurement of Oxygen Incorporation into Thin Film Oxides...  

NLE Websites -- All DOE Office Websites (Extended Search)

Measurement of Oxygen Incorporation into Thin Film Oxides at Room Temperature Upon Ultraviolet Phton Irradiation. Direct Measurement of Oxygen Incorporation into Thin Film Oxides...

93

BDS thin film damage competition  

SciTech Connect

A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

Stolz, C J; Thomas, M D; Griffin, A J

2008-10-24T23:59:59.000Z

94

Dielectric back scattering patterns for light trapping in thin-film Si solar cells  

E-Print Network (OSTI)

Dielectric back scattering patterns for light trapping in thin-film Si solar cells M. van Lare,1 of dielectric and metallic backscattering patterns in thin-film a-Si:H solar cells. We compare devices. Zhu, C.-M. Hsu, Z. Yu, S. Fan, and Y. Cui, "Nanodome solar cells with efficient light management

Polman, Albert

95

Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films  

E-Print Network (OSTI)

Effect of Quantum Confinement on Thermoelectric Properties of 2D and 1D Semiconductor Thin Films A. Bulusu and D. G. Walker1 Interdisciplinary Program in Material Science Vanderbilt University Nashville on device characteristics of 1D and 2D thin film superlattices whose applications include thermoelectric

Walker, D. Greg

96

Enhanced quantum efficiency of amorphous silicon thin film solar cells with the inclusion of a rear-reflector thin film  

SciTech Connect

We investigated the growth mechanism of amorphous silicon thin films by implementing hot-wire chemical vapor deposition and fabricated thin film solar cell devices. The fabricated cells showed efficiencies of 7.5 and 8.6% for the samples without and with the rear-reflector decomposed by sputtering, respectively. The rear-reflector enhances the quantum efficiency in the infrared spectral region from 550 to 750?nm. The more stable quantum efficiency of the sample with the inclusion of a rear-reflector than the sample without the rear-reflector due to the bias effect is related to the enhancement of the short circuit current.

Park, Seungil [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Yong Ji, Hyung; Jun Kim, Myeong; Hyeon Peck, Jong [Energy Conversions Technology Center, Korea Institute of Industrial Technology, Cheonan 331-825 (Korea, Republic of); Kim, Keunjoo, E-mail: kimk@chonbuk.ac.kr [Department of Mechanical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2014-02-17T23:59:59.000Z

97

SunShot Initiative: Thin Film Photovoltaics Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Film Photovoltaics Research Thin Film Photovoltaics Research to someone by E-mail Share SunShot Initiative: Thin Film Photovoltaics Research on Facebook Tweet about SunShot Initiative: Thin Film Photovoltaics Research on Twitter Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Google Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Delicious Rank SunShot Initiative: Thin Film Photovoltaics Research on Digg Find More places to share SunShot Initiative: Thin Film Photovoltaics Research on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Thin Film Photovoltaics Research The U.S. Department of Energy (DOE) supports research and development of

98

Innovative Thin Films LLC | Open Energy Information  

Open Energy Info (EERE)

Thin Films LLC Thin Films LLC Jump to: navigation, search Name Innovative Thin Films LLC Place Toledo, Ohio Zip 43607 Product Provider of altnernative energy thin film deposition technology. Coordinates 46.440613°, -122.847838° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":46.440613,"lon":-122.847838,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

99

Receiver protecting device based on microstrip structure with high-temperature superconductor film  

Science Journals Connector (OSTI)

New design of an effective device for protection against high-power electromagnetic pulses has been created based ... third resonator based on a thin film of high-temperature superconductor (HTSC) occurring in th...

B. A. Belyaev; I. V. Govorun; A. A. Leksikov; A. M. Serzhantov

2012-03-01T23:59:59.000Z

100

Efficient Föster energy transfer : from phosphorescent organic molecules to J-aggregate thin film  

E-Print Network (OSTI)

This thesis demonstrates the first ever use of Forster resonance energy transfer (FRET) to increase the quantum efficiency of a electrically pumped J-aggregate light emitting device (JLED). J-aggregate thin films are highly ...

Shirasaki, Yasuhiro

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Impurity and back contact effects on CdTe/CdS thin film solar cells.  

E-Print Network (OSTI)

??CdTe/CdS thin film solar cells are the most promising cost-effective solar cells. The goal of this project is to improve the performance for CdS/CdTe devices… (more)

Zhao, Hehong

2008-01-01T23:59:59.000Z

102

Photovoltaics, solar energy materials & thin films-IMRC 2006, Cancun, Mexico: Selected papers  

Science Journals Connector (OSTI)

The International symposium “Photovoltaics, Solar Energy Materials & Thin Films” was held in Cancun, Mexico from 20 to 24 August 2006. More...2 solar cells; and material characterization. A good...2 and the devic...

Xavier Mathew

2007-11-01T23:59:59.000Z

103

Chemical vapor deposition of conjugated polymeric thin films for photonic and electronic applications  

E-Print Network (OSTI)

(cont.) Conjugated polymers have delocalized electrons along the backbone, facilitating electrical conductivity. As thin films, they are integral to organic semiconductor devices emerging in the marketplace, such as flexible ...

Lock, John P

2005-01-01T23:59:59.000Z

104

Thin-film Rechargeable Lithium Batteries  

DOE R&D Accomplishments (OSTI)

Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

Dudney, N. J.; Bates, J. B.; Lubben, D.

1995-06-00T23:59:59.000Z

105

Thin film absorber for a solar collector  

DOE Patents (OSTI)

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, William G. (Cutchogue, NY)

1985-01-01T23:59:59.000Z

106

Peeling from a patterned thin elastic film  

E-Print Network (OSTI)

Inspired by the observation that many naturally occurring adhesives arise as textured thin films, we consider the displacement controlled peeling of a flexible plate from an incision-patterned thin adhesive elastic layer. We find that crack initiation from an incision on the film occurs at a load much higher than that required to propagate it on a smooth adhesive surface; multiple incisions thus cause the crack to propagate intermittently. Microscopically, this mode of crack initiation and propagation in geometrically confined thin adhesive films is related to the nucleation of cavitation bubbles behind the incision which must grow and coalesce before a viable crack propagates. Our theoretical analysis allows us to rationalize these experimental observations qualitatively and quantitatively and suggests a simple design criterion for increasing the interfacial fracture toughness of adhesive films.

A. Ghatak; L. Mahadevan; J. Y. Chung; M. K. Chaudhury; V. Shenoy

2004-04-29T23:59:59.000Z

107

Method for making thin polypropylene film  

DOE Patents (OSTI)

An economical method is provided for making uniform thickness polypropylene film as thin as 100 Angstroms. A solution of polypropylene dissolved in xylene is formed by mixing granular polypropylene and xylene together in a flask at an elevated temperature. A substrate, such as a glass plate or microscope slide is immersed in the solution. When the glass plate is withdrawn from the solution at a uniform rate, a thin polypropylene film forms on a flat surface area of the glass plate as the result of xylene evaporation. The actual thickness of the polypropylene film is functional of the polypropylene in xylene solution concentration, and the particular withdrawal rate of the glass plate from the solution. After formation, the thin polypropylene film is floated from the glass plate onto the surface of water, from which it is picked up with a wire hoop.

Behymer, R.D.; Scholten, J.A.

1985-11-21T23:59:59.000Z

108

Organic thin film prehistory: looking towards solution phase aggregation |  

NLE Websites -- All DOE Office Websites (Extended Search)

Organic thin film prehistory: looking towards solution phase aggregation Organic thin film prehistory: looking towards solution phase aggregation Wednesday, November 6, 2013 - 3:00pm SLAC, Redtail Hawk Conference Room 108A Christopher Tassone, SSRL Polymer bulk heterojunction (BHJ) solar cells have attracted significant attention in industry and academia because of their potential for achieving large-area, light-weight, and flexible photovoltaic devices through cost-effective solution deposition techniques. These devices consist of a blend of an absorbing polymer and an electron accepting fullerene, the molecular packing and phase segregation of which heavily influence power conversion efficiency by effecting important processes such as exciton splitting, charge transport, and recombination. Understanding and utilization of molecular interactions to predicatively control the

109

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES  

E-Print Network (OSTI)

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES S. Suresh1 , T.-G. Nieh2 and B.W. Choi2: Mechanical properties; Nano-indentation; Thin films; Copper; Dislocations Introduction Indentation methods films on substrates (e.g., [2,3]) using instrumented indentation. Nano-indentation studies of thin films

Suresh, Subra

110

Photovoltaic Polycrystalline Thin-Film Cell Basics | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Polycrystalline Thin-Film Cell Basics Polycrystalline Thin-Film Cell Basics Photovoltaic Polycrystalline Thin-Film Cell Basics August 20, 2013 - 2:36pm Addthis Polycrystalline thin-film cells are made of many tiny crystalline grains of semiconductor materials. The materials used in these cells have properties that are different from those of silicon. Thin-film cells have many advantages over their thick-film counterparts. For example, they use much less material. The cell's active area is usually only 1 to 10 micrometers thick, whereas thick films typically are 100 to 300 micrometers thick. Also, thin-film cells can usually be manufactured in a large-area process, which can be an automated, continuous production process. Finally, they can be deposited on flexible substrate materials. The term thin film comes from the method used to deposit the film, not from

111

Superhydrophobic Thin Film Symposium | ornl.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

Superhydrophobic Thin Film Symposium Superhydrophobic Thin Film Symposium Sep 05 2012 12:00 AM - 05:00 PM Hosted by Oak Ridge Laboratory's Partnerships Directorate and focusing on the recent LDRD Launch project work completed by Dr. Tolga Aytug and Dr. John T. Simpson (ORNL research PI's). Oak Ridge, TN Oak Ridge National Laboratory CONTACT : Email: Cassie Lopez Phone:(865) 576-9294 Add to Calendar SHARE Hosted by Oak Ridge Laboratory's Partnerships Directorate and focusing on the recent LDRD Launch project work completed by Dr. Tolga Aytug and Dr. John T. Simpson (ORNL research PI's). Purpose To share the ORNL Superhydrophonbic Thin Film technology to prospective commercial partners. Date and Time The conference will be held on the morning of Wednesday September 5th at Oak Ridge National Laboratory (ORNL) by Partnerships and Technology

112

Thin Film Transistors On Plastic Substrates  

DOE Patents (OSTI)

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

2004-01-20T23:59:59.000Z

113

Combinatorial study of zinc tin oxide thin-film transistors  

SciTech Connect

Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO:SnO{sub 2} ratio of the film varies as a function of position on the sample, from pure ZnO to SnO{sub 2}, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2 to 12 cm{sup 2}/V s, with two peaks in mobility in devices at ZnO fractions of 0.80{+-}0.03 and 0.25{+-}0.05, and on/off ratios as high as 10{sup 7}. Transistors composed predominantly of SnO{sub 2} were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

McDowell, M. G.; Sanderson, R. J.; Hill, I. G. [Dalhousie University, Department of Physics, Halifax, Nova Scotia B3H 3J5 (Canada)

2008-01-07T23:59:59.000Z

114

Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown...  

NLE Websites -- All DOE Office Websites (Extended Search)

Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by Oxygen-plasma-assisted Molecular Beam Epitaxy. Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by...

115

Annealed CVD molybdenum thin film surface  

DOE Patents (OSTI)

Molybdenum thin films deposited by pyrolytic decomposition of Mo(CO).sub.6 attain, after anneal in a reducing atmosphere at temperatures greater than 700.degree. C., infrared reflectance values greater than reflectance of supersmooth bulk molybdenum. Black molybdenum films deposited under oxidizing conditions and annealed, when covered with an anti-reflecting coating, approach the ideal solar collector characteristic of visible light absorber and infrared energy reflector.

Carver, Gary E. (Tucson, AZ); Seraphin, Bernhard O. (Tucson, AZ)

1984-01-01T23:59:59.000Z

116

THIN FILM MECHANICS BULGING AND Ph.D Dissertation  

E-Print Network (OSTI)

for the intensive effort in research in materials and processing techniques. Thin film windows are window underneath. The thin film window has such a small thickness to span ratio that it can usually be considered and precision-stretching of thin film windows are examined. Bulge Testing is a method used to evaluate

Huston, Dryver R.

117

Bendable single crystal silicon thin film transistors formed by printing on plastic substrates  

E-Print Network (OSTI)

Bendable single crystal silicon thin film transistors formed by printing on plastic substrates E on plastic substrates using an efficient dry transfer printing technique. In these devices, free standing-Si is then transferred, to a specific location and with a controlled orientation, onto a thin plastic sheet

Rogers, John A.

118

Thin films for solar control applications  

Science Journals Connector (OSTI)

...properly cited. Thin films for solar control applications Sapna Shrestha...performance of vacuum glazing. Solar Energy 81, 8. ( doi:10...mirrors produced by plasma ion assisted deposition. J. Non-Cryst...and cost of vacuum glazing. Solar Energy 55, 151. ( doi:10...

2010-01-01T23:59:59.000Z

119

Thin film battery and method for making same  

DOE Patents (OSTI)

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

Bates, John B. (Oak Ridge, TN); Dudney, Nancy J. (Knoxville, TN); Gruzalski, Greg R. (Oak Ridge, TN); Luck, Christopher F. (Knoxville, TN)

1994-01-01T23:59:59.000Z

120

Thin-film aerogel thermal conductivity measurements via 3?  

Science Journals Connector (OSTI)

The limiting constraint in a growing number of nano systems is the inability to thermally tune devices. Silica aerogel is widely accepted as the best solid thermal insulator in existence and offers a promising solution for microelectronic systems needing superior thermal isolation. In this study, thin-film silica aerogel films varying in thickness from 250 to 1280 nm were deposited on SiO2 substrates under a variety of deposition conditions. These samples were then thermally characterized using the 3? technique. Deposition processes for depositing the 3? testing mask to the sample were optimized and it was demonstrated that thin-film aerogel can maintain its structure in common fabrication processes for microelectromechanical systems. Results indicate that thin-film silica aerogel can maintain the unique, ultra-low thermal conductivity commonly observed in bulk aerogel, with a directly measured thermal conductivity as low as 0.024 W/m-K at temperature of 295 K and pressure between 0.1 and 1 Pa.

M.L. Bauer; C.M. Bauer; M.C. Fish; R.E. Matthews; G.T. Garner; A.W. Litchenberger; P.M. Norris

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Homogeneous, dual layer, solid state, thin film deposition for structural and/or electrochemical characteristics  

DOE Patents (OSTI)

Solid state, thin film, electrochemical devices (10) and methods of making the same are disclosed. An exemplary device 10 includes at least one electrode (14) and an electrolyte (16) deposited on the electrode (14). The electrolyte (16) includes at least two homogenous layers of discrete physical properties. The two homogenous layers comprise a first dense layer (15) and a second porous layer (16).

Pitts, J. Roland; Lee, Se-Hee; Tracy, C. Edwin; Li, Wenming

2014-04-08T23:59:59.000Z

122

Order on disorder: Copper phthalocyanine thin films on technical substrates  

SciTech Connect

We have studied the molecular orientation of the commonly used organic semiconductor copper phthalocyanine (CuPC) grown as thin films on the technically relevant substrates indium tin oxide, oxidized Si, and polycrystalline gold using polarization-dependent x-ray absorption spectroscopy, and compare the results with those obtained from single crystalline substrates [Au(110) and GeS(001)]. Surprisingly, the 20{endash}50 nm thick CuPC films on the technical substrates are as highly ordered as on the single crystals. Importantly, however, the molecular orientation in the two cases is radically different: the CuPC molecules stand on the technical substrates and lie on the single crystalline substrates. The reasons for this and its consequences for our understanding of the behavior of CuPC films in devices are discussed. {copyright} 2001 American Institute of Physics.

Peisert, H.; Schwieger, T.; Auerhammer, J. M.; Knupfer, M.; Golden, M. S.; Fink, J.; Bressler, P. R.; Mast, M.

2001-07-01T23:59:59.000Z

123

Nitrogen doping in pulsed laser deposited ZnO thin films using dense plasma focus  

Science Journals Connector (OSTI)

Pulsed laser deposition synthesized ZnO thin films, grown at 400 °C substrate temperature in different oxygen gas pressures, were irradiated with 6 shots of pulsed nitrogen ions obtained from 2.94 kJ dense plasma focus to achieve the nitrogen doping in ZnO. Structural, compositional and optical properties of as-deposited and nitrogen ion irradiated ZnO thin films were investigated to confirm the successful doping of nitrogen in irradiated samples. Spectral changes have been seen in the nitrogen irradiated ZnO thin film samples from the low temperature PL measurements. Free electron to acceptor emissions can be observed from the irradiated samples, which hints towards the successful nitrogen doping in films. Compositional analysis by X-ray photoelectron spectroscopy and corresponding shifts in binding energy core peaks of oxygen and nitrogen confirmed the successful use of plasma focus device as a novel source for nitrogen ion doping in ZnO thin films.

S. Karamat; R.S. Rawat; T.L. Tan; P. Lee; S.V. Springham; E. Ghareshabani; R. Chen; H.D. Sun

2011-01-01T23:59:59.000Z

124

Thin film photovoltaic panel and method  

DOE Patents (OSTI)

A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

Ackerman, Bruce (El Paso, TX); Albright, Scot P. (El Paso, TX); Jordan, John F. (El Paso, TX)

1991-06-11T23:59:59.000Z

125

Structures for dense, crack free thin films  

DOE Patents (OSTI)

The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

Jacobson, Craig P. (Lafayette, CA); Visco, Steven J. (Berkeley, CA); De Jonghe, Lutgard C. (Lafayette, CA)

2011-03-08T23:59:59.000Z

126

Elimination of PZT thin film breakage caused by electric current arcing and intrinsic differential strains during poling  

E-Print Network (OSTI)

Historically, substrate breakage during the poling process has been responsible for a 2% yield loss for a contract manufacturer specializing in volume production of lead zirconate titatate (PZT) thin film devices. In this ...

AlSaeed, Abdulelah (Abdulelah Ibrahim)

2012-01-01T23:59:59.000Z

127

Fracture patterns in thin films and multilayers Alex A. Volinsky  

E-Print Network (OSTI)

Fracture patterns in thin films and multilayers Alex A. Volinsky University of South Florida, excessive residual and externally applied stresses cause film fracture. In the case of tensile stress is the key for causing thin film fracture, either in tension, or compression, it is the influence

Volinsky, Alex A.

128

Photovoltaic Single-Crystalline, Thin-Film Cell Basics | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Single-Crystalline, Thin-Film Cell Basics Single-Crystalline, Thin-Film Cell Basics Photovoltaic Single-Crystalline, Thin-Film Cell Basics August 20, 2013 - 2:50pm Addthis Single-crystalline thin films are made from gallium arsenide (GaAs), a compound semiconductor that is a mixture of gallium and arsenic. Gallium arsenide (GaAs) is a compound semiconductor, a mixture of gallium and arsenic. Gallium is a byproduct of the smelting of other metals, notably aluminum and zinc, and it is rarer than gold. Arsenic is not rare, but it is poisonous. Gallium arsenide has been developed for use in solar cells at about the same time that it has been developed for light-emitting diodes, lasers, and other electronic devices that use light. GaAs solar cells offer several benefits: The GaAs bandgap is 1.43 eV-nearly ideal for single-junction solar

129

Fabrication Of Multilayered Thin Films Via Spin-Assembly  

NLE Websites -- All DOE Office Websites (Extended Search)

Fabrication Of Multilayered Thin Films Via Spin-Assembly Fabrication Of Multilayered Thin Films Via Spin-Assembly Fabrication Of Multilayered Thin Films Via Spin-Assembly A process of forming multilayer thin film heterostructures. Available for thumbnail of Feynman Center (505) 665-9090 Email Fabrication Of Multilayered Thin Films Via Spin-Assembly A process of forming multilayer thin film heterostructures is disclosed and includes applying a solution including a first water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species onto a substrate to form a first coating layer on the substrate, drying the first coating layer on the substrate, applying a solution including a second water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species

130

Metal Nanoparticles Enhanced Optical Absorption in Thin Film Solar Cells  

Science Journals Connector (OSTI)

The plasmonic enhanced absorption for thin film solar cells with silver nanoparticles (NPs) deposited on top of the amorphous silicon film (a-Si:H) solar cells and embedded inside the...

Xie, Wanlu; Liu, Fang; Qu, Di; Xu, Qi; Huang, Yidong

131

Fluorination of amorphous thin-film materials with xenon fluoride  

DOE Patents (OSTI)

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

Weil, R.B.

1987-05-01T23:59:59.000Z

132

Nanoarrays for Light Management in Thin Film Solar Cells  

Science Journals Connector (OSTI)

We report the use of plasmonic and photonic nanoarray to achieve light management in thin film solar cells. Theoretical and experimental data will be presented.

Ji, Jin; Nasr, Magued B; McCutcheon, Murray W; Herring, Cy

133

Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization  

E-Print Network (OSTI)

Research, Thin-Film Photovoltaic (PV) Cells Market Analysiscost of photovoltaic systems (such as solar cells) due tosolar cells are created by depositing layers of photovoltaic

Bielecki, Anthony

2013-01-01T23:59:59.000Z

134

Partial Shading in Monolithic Thin Film PV Modules: Analysis...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

A. Alam, "Identification, Characterization and Implications of Shadow Degradation in Thin Film Solar Cells," in Reliability Physics Symposium (IRPS), 2011 IEEE International, 2011,...

135

Low-Cost Light Weigh Thin Film Solar Concentrators  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Light Weight Thin Film Solar Concentrators PI: Gani B. Ganapathi (JPLCaltech) Other Contributors: L'Garde: Art Palisoc, Gyula Greschik, Koorosh Gidanian JPL: Bill Nesmith,...

136

Thermochromic Properties of Nanocrystal-based Thin Films | The...  

NLE Websites -- All DOE Office Websites (Extended Search)

Nanocrystal-based Thin Films Functional coatings that can selectively reflect or transmit near-infrared solar radiation while maintiaining high transmittance for visible light can...

137

Issue and challenges facing rechargeable thin film lithium batteries  

Science Journals Connector (OSTI)

New materials hold the key to fundamental advances in energy conversion and storage, both of which are vital in order to meet the challenge of global warming and the finite nature of fossil fuels. Nanomaterials in particular offer unique properties or combinations of properties as electrodes and electrolytes in a range of energy devices. Technological improvements in rechargeable solid-state batteries are being driven by an ever-increasing demand for portable electronic devices. Lithium batteries are the systems of choice, offering high energy density, flexible, lightweight design and longer lifespan than comparable battery technologies. We present a brief historical review of the development of lithium-based thin film rechargeable batteries highlight ongoing research strategies and discuss the challenges that remain regarding the discovery of nanomaterials as electrolytes and electrodes for lithium batteries also this article describes the possible evolution of lithium technology and evaluates the expected improvements, arising from new materials to cell technology. New active materials under investigation and electrode process improvements may allow an ultimate final energy density of more than 500 Wh/L and 200 Wh/kg, in the next 5–6 years, while maintaining sufficient power densities. A new rechargeable battery technology cannot be foreseen today that surpasses this. This report will provide key performance results for thin film batteries and highlight recent advances in their development.

Arun Patil; Vaishali Patil; Dong Wook Shin; Ji-Won Choi; Dong-Soo Paik; Seok-Jin Yoon

2008-01-01T23:59:59.000Z

138

Gain properties of dye-doped polymer thin films  

E-Print Network (OSTI)

The demonstration of an electrically pumped organic laser remains a major issue of organic optoelectronics for several decades. Nowadays, hybrid pumping seems a promising compromise where the organic material is optically pumped by an electrically pumped inorganic device on chip. This technical solution requires therefore an optimization of the organic gain medium under optical pumping. Here, we report a detailed study of gain features of dye-doped polymer thin films, in particular we introduce the gain efficiency $K$, in order to facilitate comparison between material and experimental conditions. First, we measure the bulk gain by the means of a pump-probe setup, and then present in details several factors which modify the actual gain of the layer, namely the confinement factor, the pump polarization, the molecular anisotropy, and the re-absorption. The usual model to evaluate the gain leads to an overestimation by more than one order of magnitude, which stresses the importance to design the devices accordin...

Gozhyk, I; Rabbani, H; Djellali, N; Forget, S; Chenais, S; Ulysse, C; Brosseau, A; Gauvin, S; Zyss, J; Lebental, M

2014-01-01T23:59:59.000Z

139

Polycrystalline?thin?film thermophotovoltaic cells  

Science Journals Connector (OSTI)

Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity portability silent operation absence of moving parts reduced air pollution rapid start?up high power densities potentially high conversion efficiencies choice of a wide range of heat sources employing fossil fuels biomass and even solar radiation are key advantages of TPV cells in comparison with fuel cells thermionic and thermoelectric convertors and heat engines. The potential applications of TPV systems include: remote electricity supplies transportation co?generation electric?grid independent appliances and space aerospace and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000–2000 K) black?body or selective radiators is in the 0.5–0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1?x Ga x As GaSb and Ga1?x In x Sb. Several polycrystalline thin films such as Hg1?x Cd x Te Sn1?x Cd2x Te2 and Pb1?x Cd x Te etc. have great potential for economic large?scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells e.g. 17.1% for CuIn1?x Ga x Se2 and 15.8% for CdTe. The best recombination?state density N t is in the range of 10?15–10?16 cm?3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences possibility of bandgap tailoring and use of selective emitters such as rare earth oxides (erbia holmia yttria) and rare earth?yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto?electronic (infrared detectors lasers and optical communications) technologies. Low bandgaps and larger fluences employed in TPV cells result in very high current densities which make it difficult to collect the current effectively. Techniques for laser and mechanical scribing integral interconnection and multi?junction tandem structures which have been fairly well developed for thin?film PV solar cells could be further refined for enhancing the voltages from TPV modules. Thin?film TPV cells may be deposited on metals or back?surface reflectors. Spectral control elements such as indium?tin oxide or tin oxide may be deposited directly on the TPV convertor. It would be possible to reduce the cost of TPV technologies based on single?crystal materials being developed at present to the range of US$ 2–5 per watt so as to be competitive in small to medium size commercial applications. However a further cost reduction to the range of US ¢ 35–$ 1 per watt to reach the more competitive large?scale residential consumer and hybrid?electric car markets would be possible only with the polycrystalline?thin film TPV cells.

Neelkanth G. Dhere

1996-01-01T23:59:59.000Z

140

Characterization Of Superconducting Samples With SIC System For Thin Film Developments: Status And Recent Results  

SciTech Connect

Within any thin film development program directed towards SRF accelerating structures, there is a need for an RF characterization device that can provide information about RF properties of small samples. The current installation of the RF characterization device at Jefferson Lab is Surface Impedance Characterization (SIC) system. The data acquisition environment for the system has recently been improved to allow for automated measurement, and the system has been routinely used for characterization of bulk Nb, films of Nb on Cu, MgB{sub 2}, NbTiN, Nb{sub 3}Sn films, etc. We present some of the recent results that illustrate present capabilities and limitations of the system.

Phillips, H. Lawrence [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Reece, Charles E. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Valente-Feliciano, Anne-Marie [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Xiao, Binping [Brookhaven National Lab, Upton, NY (United States); Eremeev, Grigory V. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

2014-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Temperature effect on low-k dielectric thin films studied by ERDA  

SciTech Connect

Low-k dielectric materials are becoming increasingly interesting as alternative to SiO2 with device geometries shrinking beyond the 65 nm technology node. At elevated temperatures hydrogen migration becomes an important degradation mechanism for conductivity breakdown in semiconductor devices. The possibility of hydrogen release during the fabrication process is, therefore, of great interest in the understanding of device reliability. In this study, various low-k dielectric films were subjected to thermal annealing at temperatures that are generally used for device fabrication. Elastic recoil detection analysis (ERDA) was used to investigate compositional changes and hydrogen redistribution in thin films of plasma-enhanced tetraethylortho-silicate (PETEOS), phosphorus doped silicon glass (PSG), silicon nitride (SiN) and silicon oxynitride (SiON). Except for an initial hydrogen release from the surface region in films of PETEOS and PSG, the results indicate that the elemental composition of the films was stable for at least 2 hours at 450?C.

Jensen, Jens; Possnert, Göran; Zhang, Yanwen

2008-09-23T23:59:59.000Z

142

Method of improving field emission characteristics of diamond thin films  

DOE Patents (OSTI)

A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

Krauss, Alan R. (Naperville, IL); Gruen, Dieter M. (Downer Grove, IL)

1999-01-01T23:59:59.000Z

143

Method of improving field emission characteristics of diamond thin films  

DOE Patents (OSTI)

A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.

Krauss, A.R.; Gruen, D.M.

1999-05-11T23:59:59.000Z

144

Apparatus for laser assisted thin film deposition  

DOE Patents (OSTI)

A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

Warner, B.E.; McLean, W. II

1996-02-13T23:59:59.000Z

145

Rechargeable thin-film lithium batteries  

SciTech Connect

Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

1993-09-01T23:59:59.000Z

146

Thin-film Rechargeable Lithium Batteries  

DOE R&D Accomplishments (OSTI)

Rechargeable thin films batteries with lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. The cathodes include TiS{sub 2}, the {omega} phase of V{sub 2}O{sub 5}, and the cubic spinel Li{sub x}Mn{sub 2}O{sub 4} with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The development of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25 C of 2 {mu}S/cm. Thin film cells have been cycled at 100% depth of discharge using current densities of 2 to 100 {mu}A/cm{sup 2}. The polarization resistance of the cells is due to the slow insertion rate of Li{sup +} ions into the cathode. Chemical diffusion coefficients for Li{sup +} ions in the three types of cathodes have been estimated from the analysis of ac impedance measurements.

Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, X.

1993-11-00T23:59:59.000Z

147

Experimental characterisations of thin film transmission line losses  

E-Print Network (OSTI)

Experimental characterisations of thin film transmission line losses D. Kim, H. Kim and Y. Eo New frequency-variant losses of planar thin film transmission lines are experimentally investigated in a broad frequency range. The fre- quency-variant transmission line parameters are accurately determined

148

Avalanches through windows: Multiscale visualization in magnetic thin films  

E-Print Network (OSTI)

Avalanches through windows: Multiscale visualization in magnetic thin films Alessandro Magni, Cornell University, Ithaca, NY 14853-2501 Abstract--The dynamics of domain walls motion in thin films dynamics, but are strongly dependent on the size of the windows chosen. Here we investigate how to properly

Sethna, James P.

149

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors  

Science Journals Connector (OSTI)

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (?-HfIZO) thin film transistors (TFTs). Co-sputtering-processed ?-HfIZO thin films have shown an amorphous phase in nature. ...

Sheng-Po Chang; San-Syong Shih

2012-01-01T23:59:59.000Z

150

Microstructure and properties of copper thin films on silicon substrates  

E-Print Network (OSTI)

copper thin films but on an expense of conductivity. This study proposes a technique to deposit high strength and high conductivity copper thin films on different silicon substrates at room temperature. Single crystal Cu (100) and Cu (111) have been grown...

Jain, Vibhor Vinodkumar

2009-05-15T23:59:59.000Z

151

APPLIED PHYSICS REVIEWS Erbium implanted thin film photonic materials  

E-Print Network (OSTI)

, phosphosilicate, borosilicate, and soda-lime glasses , ceramic thin films Al2O3, Y2O3, LiNbO3 , and amorphous. Phosphosilicate glass. . . . . . . . . . . . . . . . . . . . . . 7 C. Soda-lime silicate glass Er-doped thin film photonic materials is described. It focuses on oxide glasses pure SiO2

Polman, Albert

152

Advanced Thin Film Thermoelectric Systems forEfficient Air-Conditioner...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Thin Film Thermoelectric Systems forEfficient Air-Conditioners Advanced Thin Film Thermoelectric Systems forEfficient Air-Conditioners Presents recent advances in thermoelectric...

153

Method for Microfluidic Whole-Chip Temperature Measurement Using Thin-Film  

E-Print Network (OSTI)

Method for Microfluidic Whole-Chip Temperature Measurement Using Thin-Film Poly- phoresis effects. Recent developments in microfluidic and lab-on-a-chip devices has drawn ever of a glass or plastic microfluidic platform with integrated sample processing units such as mixers

Le Roy, Robert J.

154

Junctionless thin-film ferroelectric oxides for photovoltaic energy Farnood K. Rezaie*a  

E-Print Network (OSTI)

, and the conditions for ideal poling. Photovoltaic characterization of KBNNO cells will determine the efficiency, and cell fill factor (FF). Keywords: Bulk photovoltaics, Perovskite oxide, Ferroelectric thin-film, KBNNO. This creates opportunities for innovation in photovoltaic cells and state of the art optoelectronic devices

Peale, Robert E.

155

Thin film adhesion by nanoindentation-induced superlayers. Final report  

SciTech Connect

This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

Gerberich, William W.; Volinsky, A.A.

2001-06-01T23:59:59.000Z

156

Glow discharge plasma deposition of thin films  

DOE Patents (OSTI)

A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

Weakliem, Herbert A. (Pennington, NJ); Vossen, Jr., John L. (Bridgewater, NJ)

1984-05-29T23:59:59.000Z

157

Thin Film Femtosecond Laser Damage Competition  

SciTech Connect

In order to determine the current status of thin film laser resistance within the private, academic, and government sectors, a damage competition was started at the 2008 Boulder Damage Symposium. This damage competition allows a direct comparison of the current state of the art of high laser resistance coatings since they are tested using the same damage test setup and the same protocol. In 2009 a high reflector coating was selected at a wavelength of 786 nm at normal incidence at a pulse length of 180 femtoseconds. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials and layer count, and spectral results will also be shared.

Stolz, C J; Ristau, D; Turowski, M; Blaschke, H

2009-11-14T23:59:59.000Z

158

Room-temperature magnetoelectric multiferroic thin films and applications thereof  

DOE Patents (OSTI)

The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.

Katiyar, Ram S; Kuman, Ashok; Scott, James F.

2014-08-12T23:59:59.000Z

159

Method for making surfactant-templated thin films  

DOE Patents (OSTI)

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (New Orleans, LA); Fan, Hong You (Albuquerque, NM)

2010-08-31T23:59:59.000Z

160

Method for making surfactant-templated thin films  

DOE Patents (OSTI)

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

2002-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

QUANTIFICATION OF LOSSES IN THIN-FILM CdS/CdTe SOLAR CELLS S.H. Demtsu and J.R. Sites  

E-Print Network (OSTI)

QUANTIFICATION OF LOSSES IN THIN-FILM CdS/CdTe SOLAR CELLS S.H. Demtsu and J.R. Sites Department of Physics, Colorado State University, Fort Collins, CO 80523, USA ABSTRACT Quantification of solar cell Thin-film CdS/CdTe devices have been studied extensively, but some basic underlying properties

Sites, James R.

162

Josephson junction in a thin film  

SciTech Connect

The phase difference {phi}(y) for a vortex at a line Josephson junction in a thin film attenuates at large distances as a power law, unlike the case of a bulk junction where it approaches exponentially the constant values at infinities. The field of a Josephson vortex is a superposition of fields of standard Pearl vortices distributed along the junction with the line density {phi}'(y)/2{pi}. We study the integral equation for {phi}(y) and show that the phase is sensitive to the ratio l/{Lambda}, where l={lambda}{sub J}{sup 2}/{lambda}{sub L}, {Lambda}=2{lambda}{sub L}{sup 2}/d, {lambda}{sub L}, and {lambda}{sub J} are the London and Josephson penetration depths, and d is the film thickness. For l<<{Lambda}, the vortex ''core'' of the size l is nearly temperature independent, while the phase ''tail'' scales as l{Lambda}/y{sup 2}={lambda}{sub J}2{lambda}{sub L}/d/y{sup 2}; i.e., it diverges as T{yields}T{sub c}. For l>>{Lambda}, both the core and the tail have nearly the same characteristic length l{Lambda}.

Kogan, V. G.; Dobrovitski, V. V.; Clem, J. R.; Mawatari, Yasunori; Mints, R. G.

2001-04-01T23:59:59.000Z

163

Bulge testing of single and dual layer thin films Dryver R. Huston*ab  

E-Print Network (OSTI)

to a thin film window. By comparing the pressure- displacement relation with a mechanical model, the elastic structures, such as the thin film windows that are used in Next Generation Lithography masks and certain MEMS it in a thin film window. Thin film windows are fabricated by removing the thick substrate out from underneath

Huston, Dryver R.

164

Focused ion beam specimen preparation for electron holography of electrically biased thin film solar cells  

E-Print Network (OSTI)

, biased TEM specimen, thin film solar cell, FIB Thin films of hydrogenated Si (Si:H) can be used as active for electron holography of a thin film solar cell using conventional lift-out specimen preparation and a homeFocused ion beam specimen preparation for electron holography of electrically biased thin film

Dunin-Borkowski, Rafal E.

165

Composition–Structure–Function Diagrams of Ti–Ni–Au Thin Film Shape Memory Alloys  

Science Journals Connector (OSTI)

thin films; annealing; high temperature shape memory alloys; combinatorial materials science; phase transformation ...

Pio John S. Buenconsejo; Alfred Ludwig

2014-11-04T23:59:59.000Z

166

Substrate Effect on the Melting Temperature of Thin Polyethylene Films M. Rafailovich,1,* J. Sokolov,1  

E-Print Network (OSTI)

Substrate Effect on the Melting Temperature of Thin Polyethylene Films Y. Wang,1 M. Rafailovich,1 polyethylene thin films. The Tm decreases with the film thickness decrease when the film is thinner than that the degree of crystal- linity of polyethylene (PE) remained high even in films as thin as 15 nm [5]. A novel

167

Chemical analysis of thin films at Sandia National Laboratories  

SciTech Connect

The characterization of thin films produced by chemical and physical vapor deposition requires special analytical techniques. When the average compositions of the films are required, dissolution of the thin films and measurement of the concentrations of the solubilized species is the appropriate analytical approach. In this report techniques for the wet chemical analysis of thin films of Si:Al, P/sub 2/O/sub 5/:SiO/sub 2/, B/sub 2/O/sub 3/:SiO/sub 2/, TiB/sub x/ and TaB/sub x/ are described. The analyses are complicated by the small total quantities of these analytes present in the films, the refractory characters of these analytes, and the possibility of interferences from the substrates on which the films are deposited. Etching conditions are described which dissolve the thin films without introducing interferences from the substrates. A chemical amplification technique and inductively coupled plasma atomic emission spectrometry are shown to provide the sensitivity required to measure the small total quantities (micrograms to milligrams) of analytes present. Also the chemical analysis data has been used to calibrate normal infrared absorption spectroscopy to give fast estimates of the phosphorus and/or boron dopant levels in thin SiO/sub 2/ films.

Tallant, D.R.; Taylor, E.L.

1980-05-01T23:59:59.000Z

168

Superconducting flux coupled fast switching device from YBCo films. Final report, 1 September 1991-29 February 1992  

SciTech Connect

Applications of high-temperature superconducting (HTSC) materials, especially thin-film YBaCuO (123), to microelectronic devices have been limited by materials-related fabrication problems. Magnetic-flux-coupled devices are less limited by these problems but have not been widely explored. The innovation for this program was demonstration of a flux-coupled device that was: (1) simple to fabricate, (2) based on silicon substrates, (3) shows excellent flux-flow dynamics, and (4) can be implemented in switching or amplifying circuits. In Phase I the authors demonstrated the potential for developing this device utilizing high critical-current YBCO thin films on yttria-stabilized zirconia (YSZ)-buffered Si substrates. The devices are designed to take advantage of these new materials opportunities, are within realistic materials and fabrication constraints, and are projected to operate from dc to at least 10 GHz. The flux-flow devices (FFD) that have been fabricated include: externally-activated magnetic switch, superconducting transformer, and flux-flow (transistor-like) switch. The use of Si wafers not only allows high-quality quality films on large (or very thin) and inexpensive substrates, but also many design configurations with great potential for wafer-scale, hybrid integration with semiconductor electronics. Thin Film Microelectronics, Superconducting Transistor, Three-Terminal Active Device, Pulsed Laser Ablation-Deposition.

Fenner, D.B.

1992-04-30T23:59:59.000Z

169

Casimir effect for thin films from imperfect materials  

E-Print Network (OSTI)

We propose an approach for investigation of interaction of thin material films with quantum electrodynamic fields. Using main principles of quantum electrodynamics (locality, gauge invariance, renormalizability) we construct a single model for Casimir-like phenomena arising near the film boundary on distances much larger then Compton wavelength of the electron where fluctuations of Dirac fields are not essential. In this model the thin film is presented by a singular background field concentrated on a 2-dimensional surface. All properties of the film material are described by one dimensionless parameter. For two parallel plane films we calculate the photon propagator and the Casimir force, which appears to be dependent on film material and can be both attractive and repulsive. We consider also an interaction of plane film with point charge and straight line current. Here, besides usual results of classical electrodynamics the model predicts appearance of anomalous electric and magnetic fields.

V. N. Markov; Yu. M. Pis'mak

2006-06-04T23:59:59.000Z

170

TI--CR--AL--O thin film resistors  

DOE Patents (OSTI)

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Jankowski, Alan F. (Livermore, CA); Schmid, Anthony P. (Solana Beach, CA)

2000-01-01T23:59:59.000Z

171

Functionalized multilayer thin films for protection against acutely toxic agents  

E-Print Network (OSTI)

The recently developed practice of spraying polyelectrolyte solutions onto a substrate in order to construct thin films via the Layer-by-Layer (LbL) technique has been further investigated and extended. In this process a ...

Krogman, Kevin Christopher

2009-01-01T23:59:59.000Z

172

Laser scribing of CIGS based thin films solar cells  

Science Journals Connector (OSTI)

Laser scribing tests on CIGS based thin films solar cells have been performed. The obtained high quality incisions show that laser scribing is a valuable tool for producing low-cost...

Sozzi, Michele; Menossi, Daniele; Bosio, Alessio; Cucinotta, Annamaria; Romeo, Nicola; Selleri, Stefano

173

Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)  

SciTech Connect

This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

Not Available

2013-06-01T23:59:59.000Z

174

National High Magnetic Field Laboratory: Magnetic Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

recorded work with magnetic thin films took place in the 1880s and was carried out by German physicist August Kundt. Well known for his research on sound and optics, Kundts...

175

Picosecond laser ablation of nano-sized WTi thin film  

Science Journals Connector (OSTI)

Interaction of an Nd:YAG laser, operating at 532 nm wavelength and pulse duration of 40 ps, with tungsten-titanium (WTi) thin film (thickness, 190 nm)...2...were found to be sufficient for modification of the WTi

S. Petrovi?; B. Gakovi?; D. Peruško; T. Desai; D. Batani; M. ?ekada…

2009-08-01T23:59:59.000Z

176

Quasi-Reversible Oxygen Exchange of Amorphous IGZO Thin Films  

E-Print Network (OSTI)

Center In situ electrical properties of a-IGZO thin films were carried out at 200ºC as a function of carrier content vs. pO2) analysis should be applicable for studying the underlying carrier generation

Shahriar, Selim

177

Flexible, transparent thin film transistors raise hopes for flexible...  

NLE Websites -- All DOE Office Websites (Extended Search)

screens and displays. Virtually all flat-screen TVs and smartphones are made up of thin film transistors today; they form the basis of both LEDs and LCDs (liquid crystal...

178

Role of Microstructural Phenomena in Magnetic Thin Films. Final Report  

SciTech Connect

Over the period of the program we systematically varied microstructural features of magnetic thin films in an attempt to better identify the role which each feature plays in determining selected extrinsic magnetic properties. This report summarizes the results.

Laughlin, D. E.; Lambeth, D. N.

2001-04-30T23:59:59.000Z

179

Self-Assembling Process for Fabricating Tailored Thin Films  

ScienceCinema (OSTI)

A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

Sandia

2009-09-01T23:59:59.000Z

180

Self-Assembling Process for Fabricating Tailored Thin Films  

ScienceCinema (OSTI)

A simple, economical nanotechnology coating process that enables the development of nanoparticle thin films with architectures and properties unattainable by any other processing method. 2007 R&D 100 winner (SAND2007-1878P)

None

2010-01-08T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Initiated chemical vapor deposition of functional polyacrylic thin films  

E-Print Network (OSTI)

Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

Mao, Yu, 1975-

2005-01-01T23:59:59.000Z

182

Direct printing of lead zirconate titanate thin films  

E-Print Network (OSTI)

Thus far, use of lead zirconate titanate (PZT) in MEMS has been limited due to the lack of process compatibility with existing MEMS manufacturing techniques. Direct printing of thin films eliminates the need for photolithographic ...

Bathurst, Stephen, 1980-

2008-01-01T23:59:59.000Z

183

A Review of Thin Film Silicon for Solar Cell Applications  

E-Print Network (OSTI)

A Review of Thin Film Silicon for Solar Cell Applications May 99 Contents 1 Introduction 3 2 Low 2.2.3 Deposition onto foreign substrates with the intention of improving crystallographic nature Field Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 11

184

Peeling Back the Layers of Thin Film Structure and Chemistry  

NLE Websites -- All DOE Office Websites (Extended Search)

July 10, 2014 Bookmark and Share The layer-by-layer analysis of the concentration of strontium within a 40-angstrom thick (La, Sr)CoO thin film applied to a SiTiO3 substrate....

185

Thin diamond films provide new material for micro-machines |...  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin diamond films provide new material for micro-machines By Jared Sagoff * July 31, 2014 Tweet EmailPrint ARGONNE, Ill. - Airbags, inkjet printers and video projectors may not...

186

Modeling of thin-film solar thermoelectric generators  

E-Print Network (OSTI)

Recent advances in solar thermoelectric generator (STEG) performance have raised their prospect as a potential technology to convert solar energy into electricity. This paper presents an analysis of thin-film STEGs. ...

Weinstein, Lee Adragon

187

Nanostructured thin films for solid oxide fuel cells  

E-Print Network (OSTI)

The goals of this work were to synthesize high performance perovskite based thin film solid oxide fuel cell (TF-SOFC) cathodes by pulsed laser deposition (PLD), to study the structural, electrical and electrochemical properties of these cathodes...

Yoon, Jongsik

2009-05-15T23:59:59.000Z

188

Enabling integration of vapor-deposited polymer thin films  

E-Print Network (OSTI)

Initiated Chemical Vapor Deposition (iCVD) is a versatile, one-step process for synthesizing conformal and functional polymer thin films on a variety of substrates. This thesis emphasizes the development of tools to further ...

Petruczok, Christy D. (Christy Danielle)

2014-01-01T23:59:59.000Z

189

Properties and sensor performance of zinc oxide thin films  

E-Print Network (OSTI)

Reactively sputtered ZnO thin film gas sensors were fabricated onto Si wafers. The atmosphere dependent electrical response of the ZnO micro arrays was examined. The effects of processing conditions on the properties and ...

Min, Yongki, 1965-

2003-01-01T23:59:59.000Z

190

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network (OSTI)

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

191

Thin, Free-Standing Films For High Resolution Neutron Imaging.  

E-Print Network (OSTI)

??Thin, free-standing boro-phosphosilicate glass (BPSG) films were fabricated at PSU Nanofab to serve as prototype neutron converters for a proposed high resolution neutron imaging system… (more)

Trivelpiece, Cory

2010-01-01T23:59:59.000Z

192

Magnetic Skyrmion Phase in MnSi Thin Films.  

E-Print Network (OSTI)

??Detailed magnetometry and polarized neutron reflectometry studies were conducted on MnSi thin films grown epitaxially on Si(111) substrates. It is demonstrated that with an in-plane… (more)

Wilson, Murray

2013-01-01T23:59:59.000Z

193

Templated dewetting of thin solid films  

E-Print Network (OSTI)

The dewetting of solid metal polycrystalline films to form metal nanoparticles occurs by the nucleation and growth of holes in the film. For typical films on flat substrates, this process is not well-controlled and results ...

Giermann, Amanda L. (Amanda Leah)

2009-01-01T23:59:59.000Z

194

Photo-Alignment Behavior of Mesoporous Silica Thin Films Synthesized on a Photo-Cross-Linkable Polymer Film  

Science Journals Connector (OSTI)

Photo-Alignment Behavior of Mesoporous Silica Thin Films Synthesized on a Photo-Cross-Linkable Polymer Film ... Photo-aligning and micropatterning techniques for mesochannels of a silica thin film using a photo-cross-linkable polymer film with a cinnamoyl group are proposed. ... We propose herein a new photo-aligning and micropatterning technique for mesochannels of a silica thin film using a photo-cross-linkable polymer film with a cinnamoyl group. ...

Haruhiko Fukumoto; Shusaku Nagano; Nobuhiro Kawatsuki; Takahiro Seki

2006-02-11T23:59:59.000Z

195

Langmuir-Blodgett films  

Science Journals Connector (OSTI)

...thwart practical applications of Langmuir-Blodgett...design of organic thin-film devices. AHN...thwart practical applications of Langmuir-Blodgett...design of organic thin-film devices. | Department...course, as in all thin film techniques...applica-tions in optical and electronic...produced by MBE or CVD (1-4). J...

JA Zasadzinski; R Viswanathan; L Madsen; J Garnaes; DK Schwartz

1994-03-25T23:59:59.000Z

196

Wrinkle-Based Measurement of Elastic Modulus of Nano-Scale Thin Pt Film Deposited on Polymeric Substrate: Verification and Uncertainty Analysis  

Science Journals Connector (OSTI)

Nano-scale thin films are extensively utilized in semiconductor, micro-electro-mechanical systems (MEMS), and nano-electro-mechanical systems (NEMS) [1–3]. As feature sizes of the devices decrease, the critical d...

H-J. Choi; J-H. Kim; H-J. Lee; S-A. Song; H-J. Lee; J-H. Han…

2010-06-01T23:59:59.000Z

197

An (ultra) high-vacuum compatible sputter source for oxide thin film growth  

SciTech Connect

A miniaturised CF-38 mountable sputter source for oxide and metal thin film preparation with enhanced high-vacuum and ultra-high-vacuum compatibility is described. The all home-built sputtering deposition device allows a high flexibility also in oxidic sputter materials, suitable deposition rates for preparation of films in the nm- and the sub-monolayer regime and excellent reliability and enhanced cleanliness for usage in UHV chambers. For a number of technologically important – yet hardly volatile – materials, the described source represents a significant improvement over thermal deposition techniques like electron-beam- or thermal evaporation, as especially the latter are no adequate tool to prepare atomically clean layers of refractory oxide materials. Furthermore, it is superior to commercially available magnetron sputter devices, especially for applications, where highly reproducible sub-monolayer thin film preparation under very clean UHV conditions is required (e.g., for studying phase boundary effects in catalysis). The device in turn offers the usage of a wide selection of evaporation materials and special target preparation procedures also allow the usage of pressed oxide powder targets. To prove the performance of the sputter-source, test preparations with technologically relevant oxide components, comprising ZrO{sub 2} and yttrium-stabilized ZrO{sub 2}, have been carried out. A wide range of characterization methods (electron microscopy, X-ray photoelectron spectroscopy, low-energy ion scattering, atomic force microscopy, and catalytic testing) were applied to demonstrate the properties of the sputter-deposited thin film systems.

Mayr, Lukas; Köpfle, Norbert; Auer, Andrea; Klötzer, Bernhard; Penner, Simon [Institute for Physical Chemistry, University of Innsbruck, Innrain 52a, A-6020 Innsbruck (Austria)] [Institute for Physical Chemistry, University of Innsbruck, Innrain 52a, A-6020 Innsbruck (Austria)

2013-09-15T23:59:59.000Z

198

Understanding Thin Film Structure for the Rational Design of  

NLE Websites -- All DOE Office Websites (Extended Search)

Understanding Thin Film Structure for the Rational Design of Understanding Thin Film Structure for the Rational Design of High-performance Organic Semiconductors for Plastic Electronics Organic semiconductors are attracting considerable research interest due to their potential applications in low-cost electronics such as organic light emitting diode (OLED) displays, RF identification tags (RFID), smart cards and electronic paper. The development of p-conjugated materials, which are composed of alternating single and double chemical bonds, are the foundation of these applications. In the past decade research in this field has progressed to the extent that desirable charge transport in the organic semiconductor film in organic thin film transistors (OTFT) can be achieved through molecular design by selective placement of electron-rich, electron-withdrawing, and aromatic groups in different parts of the molecule. Although the electronic properties are easily tuned by molecular design, the molecular packing within the thin film and the film microstructure have a significant influence on the OTFT performance. Despite this importance, this interrelationship between molecular structure, thin film molecular packing and charge transport are only poorly understood.

199

Geometric shape control of thin film ferroelectrics and resulting structures  

DOE Patents (OSTI)

A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

200

Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe  

SciTech Connect

The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.

Gessert, T. A.

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Author's personal copy Magnetotransport properties of thin CFe films  

E-Print Network (OSTI)

Author's personal copy Magnetotransport properties of thin C­Fe films J.C. Prestigiacomo a , K The magnetotransport properties of C­Fe films formed by e-beam vapor deposition onto glass substrates are presented, and metastable iron carbide CFe3 [1]. In practice, varying compositions of metastable phases can be trapped via

Adams, Philip W.

202

Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell  

E-Print Network (OSTI)

We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the localized plasmonic mode in Ag strip pair and the excited waveguide mode in silicon slab. Then we explore the method of symmetry-breaking to excite the dark modes that can further enhance the absorption ability. We compare our structure with bare thin-film Si solar cell, and results show that the integrated quantum efficiency is improved by nearly 90% in such thin geometry. It is a promising way for the solar cell.

Li, Tong; Jiang, Chun

2010-01-01T23:59:59.000Z

203

Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors  

SciTech Connect

In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Sze, Simon M. [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China)

2014-04-14T23:59:59.000Z

204

Formation and ferromagnetic properties of FeSi thin films  

SciTech Connect

In this work, the growth and ferromagnetic properties of {epsilon}-FeSi thin film on Si(100) substrate prepared by molecular beam epitaxy are reported. The inter-diffusion of Fe layer on Si(100) substrate at 600 Degree-Sign C results in polycrystalline {epsilon}-FeSi layer. The determined activation energy was 0.044 eV. The modified magnetism from paramagnetic in bulk to ferromagnetic states in {epsilon}-FeSi thin films was observed. The saturated magnetization and coercive field of {epsilon}-FeSi film are 4.6 emu/cm{sup 3} and 29 Oe at 300 K, respectively.

Shin, Yooleemi; Anh Tuan, Duong; Hwang, Younghun; Viet Cuong, Tran; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of)

2013-05-07T23:59:59.000Z

205

Degenerate cadmium oxide films for electronic devices  

Science Journals Connector (OSTI)

Highly conducting and transparent cadmium oxide films have been deposited on Corning 7059 glass substrates by ion-beam sputtering and by spray pyrolysis. The electrical and optical properties of CdO films prep...

T. L. Chu; Shirley S. Chu

206

Shape variation of micelles in polymer thin films  

SciTech Connect

The equilibrium properties of block copolymer micelles confined in polymer thin films are investigated using self-consistent field theory. The theory is based on a model system consisting of AB diblock copolymers and A homopolymers. Two different methods, based on the radius of gyration tensor and the spherical harmonics expansion, are used to characterize the micellar shape. The results reveal that the morphology of micelles in thin films depends on the thickness of the thin films and the selectivity of the confining surfaces. For spherical (cylindrical) micelles, the spherical (cylindrical) symmetry is broken by the presence of the one-dimensional confinement, whereas the top-down symmetry is broken by the selectivity of the confining surfaces. Morphological transitions from spherical or cylindrical micelles to cylinders or lamella are predicted when the film thickness approaches the micellar size.

Zhou, Jiajia, E-mail: zhou@uni-mainz.de; Shi, An-Chang, E-mail: shi@mcmaste.ca [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)] [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)

2014-01-14T23:59:59.000Z

207

DISSERTATION DEVICE CHARACTERIZATION OF CADMIUM TELLURIDE PHOTOVOLTAICS  

E-Print Network (OSTI)

DISSERTATION DEVICE CHARACTERIZATION OF CADMIUM TELLURIDE PHOTOVOLTAICS Submitted by Russell M Reserved #12;ABSTRACT DEVICE CHARACTERIZATION OF CADMIUM TELLURIDE PHOTOVOLTAICS Thin-film photovoltaics

Sites, James R.

208

Thin-film transistors based on p-type Cu{sub 2}O thin films produced at room temperature  

SciTech Connect

Copper oxide (Cu{sub 2}O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu{sub 2}O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm{sup 2}/V s and an on/off ratio of 2x10{sup 2}.

Fortunato, Elvira; Figueiredo, Vitor; Barquinha, Pedro; Elamurugu, Elangovan; Goncalves, Goncalo; Martins, Rodrigo [Departamento de Ciencia dos Materiais, CENIMAT/I3N, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, 2829-516 Caparica (Portugal); Barros, Raquel [Departamento de Ciencia dos Materiais, CENIMAT/I3N, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, 2829-516 Caparica (Portugal); Materiais Avancados, INNOVNANO, SA, 7600-095 Aljustrel (Portugal); Park, Sang-Hee Ko; Hwang, Chi-Sun [Electronic and Telecommunications Research Institute, 138 Gajeongro, Yuseong-gu, Daejeon, 305-700 (Korea, Republic of)

2010-05-10T23:59:59.000Z

209

Critical confinement and elastic instability in thin solid films  

E-Print Network (OSTI)

When a flexible plate is peeled off a thin and soft elastic film bonded to a rigid support, uniformly spaced fingering patterns develop along their line of contact. While, the wavelength of these patterns depends only on the thickness of the film, their amplitude varies with all material and geometric properties of the film and that of the adhering plate. Here we have analyzed this instability by the regular perturbation technique to obtain the excess deformations of the film over and above the base quantities. Furthermore, by calculating the excess energy of the system we have shown that these excess deformations, associated with the instability, occur for films which are critically confined. We have presented two different experiments for controlling the degree of confinement: by pre-stretching the film and by adjusting the contact width between the film and the plate.

Animangsu Ghatak; Manoj K. Chaudhury

2007-01-11T23:59:59.000Z

210

Investigation of deep level defects in CdTe thin films  

SciTech Connect

In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 °C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

Shankar, H.; Castaldini, A. [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy); Dieguez, E.; Rubio, S. [Crystal Growth Lab, Department of Materials Physics, Faculty of Science, University Autonoma of Madrid, Ciudad Universitaria de Cantoblanco, 28049, Madrid (Spain); Dauksta, E.; Medvid, A. [Institute of Technical Physics, Riga Technical University, 14 Azenes Str, Riga, Latvia, Department of Materials (Latvia); Cavallini, A. [Department of Physics and Astronomy,University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy)

2014-02-21T23:59:59.000Z

211

Photoresponse of Tb{sup 3+} doped phosphosilicate thin films  

SciTech Connect

Phosphosilicate ceramic was doped with Tb{sup 3+} using sol-gel technique to prepare thin films. The films were prepared by spin coating the phosphosilicate sols on SiO{sub x}/indium-tin-oxide/glass substrates. The photocurrent of the films at 355 nm laser excitation was observed. The photoresponse as a function of applied field and laser energy was linear and showed no sign of saturation. The films exhibited very stable photoresponse under a very high number of laser shots.

Lee, B.L.; Cao, Z. [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering] [Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering; Sisk, W.N.; Hudak, J. [Univ. of North Carolina, Charlotte, NC (United States)] [Univ. of North Carolina, Charlotte, NC (United States); Samuels, W.D.; Exarhos, G.J. [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science] [Pacific Northwest National Lab., Richland, WA (United States). Materials and Chemical Science

1997-09-01T23:59:59.000Z

212

Utility of reactively sputtered CuN{sub x} films in spintronics devices  

SciTech Connect

We have studied nitrified copper (CuN{sub x}) thin films grown by reactive sputtering in the context of spintronic devices. The Ar-to-N{sub 2} flow ratio enables tunability of the electrical resistivity and surface roughness of the CuN{sub x} films, with the former increasing to nearly 20 times that of Cu, and the latter reduced to the atomic scale. Incorporating this into a Ta/CuN{sub x}/Ta seed stack for spin valves improves the current-in-plane (CIP) magnetoresistance; maximum magnetoresistance results with CuN{sub x} seed layer and Cu interlayer. Finally, finite element modeling results are presented that suggest the use of CuN{sub x} in nanocontact spin torque oscillators can enhance current densities by limiting the current spread through the device. This may positively impact threshold currents, power requirements, and device reliability.

Fang Yeyu [Physics Department, Goeteborg University, 412 96 Goeteborg (Sweden); Persson, J. [Physics Department, Goeteborg University, 412 96 Goeteborg (Sweden); NanOsc AB, Electrum 205, 164 40 Kista (Sweden); Zha, C. [Materials Physics Department, Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); Willman, J.; Miller, Casey W. [Department of Physics, Center for Integrated Functional Materials, University of South Florida, 4202 East Fowler Avenue, Tampa, Florida 33620 (United States); Aakerman, Johan [Physics Department, Goeteborg University, 412 96 Goeteborg (Sweden); NanOsc AB, Electrum 205, 164 40 Kista (Sweden); Materials Physics Department, Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden)

2012-04-01T23:59:59.000Z

213

Angular behavior of the absorption limit in thin film silicon solar cells  

E-Print Network (OSTI)

We investigate the angular behavior of the upper bound of absorption provided by the guided modes in thin film solar cells. We show that the 4n^2 limit can be potentially exceeded in a wide angular and wavelength range using two-dimensional periodic thin film structures. Two models are used to estimate the absorption enhancement; in the first one, we apply the periodicity condition along the thickness of the thin film structure but in the second one, we consider imperfect confinement of the wave to the device. To extract the guided modes, we use an automatized procedure which is established in this work. Through examples, we show that from the optical point of view, thin film structures have a high potential to be improved by changing their shape. Also, we discuss the nature of different optical resonances which can be potentially used to enhance light trapping in the solar cell. We investigate the two different polarization directions for one-dimensional gratings and we show that the transverse magnetic pola...

Naqavi, Ali; Söderström, Karin; Battaglia, Corsin; Paeder, Vincent; Scharf, Toralf; Herzig, Hans Peter; Ballif, Christophe

2013-01-01T23:59:59.000Z

214

Biocompatibility of Pristine Graphene Monolayers, Nanosheets and Thin Films  

E-Print Network (OSTI)

There is an increasing interest to develop nanoscale biocompatible graphene structures due to their desirable physicochemical properties, unlimited application opportunities and scalable production. Here we report the preparation, characterization and biocompatibility assessment of novel graphene flakes and their enabled thin films suitable for a wide range of biomedical and electronic applications. Graphene flakes were synthesized by a chemical vapour deposition method or a liquid-phase exfoliation procedure and then thin films were prepared by transferring graphene onto glass coverslips. Raman spectroscopy and transmission electron microscopy confirmed a predominantly monolayer and a high crystalline quality formation of graphene. The biocompatibility assessment of graphene thin films and graphene flakes was performed using cultured human lung epithelial cell line A549 employing a multimodal approach incorporating automated imaging, high content screening, real-time impedance sensing in combination with bio...

Conroy, Jennifer; Smith, Ronan J; Rezvani, Ehsan; Duesberg, Georg S; Coleman, Jonathan N; Volkov, Yuri

2014-01-01T23:59:59.000Z

215

Surface acoustic wave interaction with thin magnetic films  

Science Journals Connector (OSTI)

It has been found that surface acoustic waves(SAW) exhibit a very large interaction with appropriately prepared thin magnetic films through the magnetoelasticeffect. For a 600 Å 90Ni 10Fe thin film the interaction can produce changes in attenuation of 30 dB/cm at 700 MHz by changing from 2 to 12 G a magnetic field applied parallel to the film plane and perpendicular to the SAW.Measurements of the frequency dependence of this large effect yield values for the Gilbert damping constant and the anisotropy field. This interaction has been studied in the series of xNi (1 ? x)Fe alloy films. For x > 80 wt % the magnetoelastic constant ? is negative. It is positive for x Science Foundation under Grant No. ESC 8519695.

Moises Levy; Roy Wiegert

1986-01-01T23:59:59.000Z

216

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents (OSTI)

A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

1998-02-03T23:59:59.000Z

217

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents (OSTI)

A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

Mitlitsky, Fred (Livermore, CA); Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Colella, Nicholas J. (Livermore, CA)

1998-02-03T23:59:59.000Z

218

Thin-film tin oxideâ??ethanol sensor  

Science Journals Connector (OSTI)

Tin Oxide (SnO2) thin films grown on glass substrate at 648 K using direct evaporation method with two gold pads deposited on the top for electrical contacts were exposed to ethanol vapours (200-1000 ppm). The operating temperature of the sensor was optimised. The sensitivity variation of films having different thicknesses was studied. To improve the sensitivity and selectivity further, a thin layer of metal oxide was deposited on the sensor surface to work as a catalytic layer and its effect on the performance of the sensor was studied. The response and recovery times of the sensor were determined.

H.J. Pandya

2009-01-01T23:59:59.000Z

219

Thin-film fiber optic hydrogen and temperature sensor system  

DOE Patents (OSTI)

The invention discloses a sensor probe device for monitoring of hydrogen gas concentrations and temperatures by the same sensor probe. The sensor probe is constructed using thin-film deposition methods for the placement of a multitude of layers of materials sensitive to hydrogen concentrations and temperature on the end of a light transparent lens located within the sensor probe. The end of the lens within the sensor probe contains a lens containing a layer of hydrogen permeable material which excludes other reactive gases, a layer of reflective metal material that forms a metal hydride upon absorbing hydrogen, and a layer of semi-conducting solid that is transparent above a temperature dependent minimum wavelength for temperature detection. The three layers of materials are located at the distal end of the lens located within the sensor probe. The lens focuses light generated by broad-band light generator and connected by fiber-optics to the sensor probe, onto a reflective metal material layer, which passes through the semi-conducting solid layer, onto two optical fibers located at the base of the sensor probe. The reflected light is transmitted over fiber optic cables to a spectrometer and system controller. The absence of electrical signals and electrical wires in the sensor probe provides for an elimination of the potential for spark sources when monitoring in hydrogen rich environments, and provides a sensor free from electrical interferences. 3 figs.

Nave, S.E.

1998-07-21T23:59:59.000Z

220

Perovskite phase thin films and method of making  

DOE Patents (OSTI)

The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

Boyle, Timothy J. (Albuquerque, NM); Rodriguez, Mark A. (Albuquerque, NM)

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Two-color Laser Desorption of Nanostructured MgO Thin Films....  

NLE Websites -- All DOE Office Websites (Extended Search)

Two-color Laser Desorption of Nanostructured MgO Thin Films. Two-color Laser Desorption of Nanostructured MgO Thin Films. Abstract: Neutral magnesium atom emission from...

222

Initiated chemical vapor deposition of polymeric thin films : mechanism and applications  

E-Print Network (OSTI)

Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness ...

Chan, Kelvin, Ph. D. Massachusetts Institute of Technology

2005-01-01T23:59:59.000Z

223

Anisotropic dewetting in ultra-thin single-crystal silicon-on-insulator films  

E-Print Network (OSTI)

The single crystal silicon-on-insulator thin film materials system represents both an ideal model system for the study of anisotropic thin film dewetting as well as a technologically important system for the development ...

Danielson, David T. (David Thomas)

2008-01-01T23:59:59.000Z

224

Trend Detection on Thin-Film Solar Cell Technology Using Cluster Analysis and Modified Data Crystallization  

Science Journals Connector (OSTI)

Thin-film solar cell, one of green energies, is growing ... . To detect the potential trends of this technology is essential for companies and relevant industries ... patterns, the potential trends of thin-film solar

Tzu-Fu Chiu; Chao-Fu Hong; Yu-Ting Chiu

2010-01-01T23:59:59.000Z

225

Thin-film solar cells: review of materials, technologies and commercial status  

Science Journals Connector (OSTI)

As apparent from Table 1..., showing the production volume for different manufacturers of these thin-film technologies over the past 3 years, rapidly-growing ... are also increasing rapidly, the thin-film technologies

Martin A. Green

2007-10-01T23:59:59.000Z

226

Quench Properties and Fault Current Limiters of YBCO Thin-Film Superconductors  

Science Journals Connector (OSTI)

We measured the current dependence of quench propagation velocities in strip-shaped YBCO thin films and the current-limiting properties of fault current limiters consisting of a YBCO thin film and ... -300 cm/sec...

Hiroshi Kubota; Yuki Kudo; Mutsuki Yamazaki…

1998-01-01T23:59:59.000Z

227

E-Print Network 3.0 - advanced thin film Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

half of all glass... cells by absorbing light within a specific wavelength. Today's thin-film solar cells could not function... , but static, layer of a thin-film pho- tovoltaic...

228

High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing  

E-Print Network (OSTI)

One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

229

Growth of Epitaxial Thin Pd(111) Films on Pt(111) and Oxygen...  

NLE Websites -- All DOE Office Websites (Extended Search)

Growth of Epitaxial Thin Pd(111) Films on Pt(111) and Oxygen-Terminated FeO(111) Surfaces . Growth of Epitaxial Thin Pd(111) Films on Pt(111) and Oxygen-Terminated FeO(111)...

230

Generation of low work function, stable compound thin films by laser ablation  

DOE Patents (OSTI)

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Dinh, Long N. (Concord, CA); McLean, II, William (Oakland, CA); Balooch, Mehdi (Berkeley, CA); Fehring, Jr., Edward J. (Dublin, CA); Schildbach, Marcus A. (Livermore, CA)

2001-01-01T23:59:59.000Z

231

Preparation of a semiconductor thin film  

DOE Patents (OSTI)

A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, Martin (TuBingen, DE); Schulz, Douglas L. (Denver, CO); Curtis, Calvin J. (Lakewood, CO); Ginley, David S. (Evergreen, CO)

1998-01-01T23:59:59.000Z

232

Preparation of a semiconductor thin film  

DOE Patents (OSTI)

A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Ginley, D.S.

1998-01-27T23:59:59.000Z

233

Patternable transparent carbon nanotube films for electrochromic devices Liangbing Hu and George Grunera  

E-Print Network (OSTI)

Patternable transparent carbon nanotube films for electrochromic devices Liangbing Hu and George nanotube films on polyethylene terephthalate as flexible electrodes in electrochromic devices using. Electrochromic devices attract much interest due to their potential use in applications such as smart windows

Gruner, George

234

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

SciTech Connect

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

235

Highly conductive p-type microcrystalline silicon thin films  

SciTech Connect

In the development of thin film solar cells there is presently an increasing interest in microcrystalline silicon, deposited at low temperatures (200--400 C). The plasma deposition of boron doped microcrystalline films was optimized with respect to crystallinity and doping efficiency. High room temperature conductivities up to 39 Scm{sup {minus}1} were achieved under condition when the energy of positive ions impinging on the growth surface is minimized.

Heintze, M.; Schmitt, M. [Univ. Stuttgart (Germany). Inst. fuer Physikalische Elektronik

1996-12-31T23:59:59.000Z

236

Method for producing high quality thin layer films on substrates  

DOE Patents (OSTI)

A method for producing high quality, thin layer films of inorganic compounds upon the surface of a substrate is disclosed. The method involves condensing a mixture of preselected molecular precursors on the surface of a substrate and subsequently inducing the formation of reactive species using high energy photon or charged particle irradiation. The reactive species react with one another to produce a film of the desired compound upon the surface of the substrate.

Strongin, Myron (Center Moriches, NY); Ruckman, Mark (Middle Island, NY); Strongin, Daniel (Port Jefferson, NY)

1994-01-01T23:59:59.000Z

237

Method for producing high quality thin layer films on substrates  

DOE Patents (OSTI)

A method for producing high quality, thin layer films of inorganic compounds upon the surface of a substrate is disclosed. The method involves condensing a mixture of preselected molecular precursors on the surface of a substrate and subsequently inducing the formation of reactive species using high energy photon or charged particle irradiation. The reactive species react with one another to produce a film of the desired compound upon the surface of the substrate. 4 figures.

Strongin, M.; Ruckman, M.; Strongin, D.

1994-04-26T23:59:59.000Z

238

Self-biased planar millimeter wave notch filters based on magnetostatic wave excitation in barium hexagonal ferrite thin films  

E-Print Network (OSTI)

Self-biased planar millimeter wave notch filters based on magnetostatic wave excitation in bariumM thin films for self-biased planar millimeter wave notch filters was demonstrated for the first time because of the increased device size and weight as well as incompatibility with mono- lithic integrated

239

Nanoassembly control and optical absorption in CdTe-ZnO nanocomposite thin films  

SciTech Connect

The spatial distribution of CdTe nanoparticles within a ZnO thin-film matrix was manipulated using a dual-source, sequential radio-frequency (RF)-sputter deposition technique to produce nanocomposite materials with tuned spectral absorption characteristics. The relative substrate exposure time to each sputtering source was used to control the semiconductor phase connectivity, both within the film plane and along the film growth direction, to influence the degree of photocarrier confinement and the resulting optical transition energies exhibited by the CdTe phase. Significant changes (up to {Delta}E {approx_equal} 0.3 eV) in the absorption onset energy for the CdTe nanoparticle ensemble were produced through modification in the extended structure of the semiconductor phase. Raman spectroscopy, cross-sectional transmission electron microscopy, and x-ray diffraction were used to confirm the phase identity of the CdTe and ZnO and to characterize the nanostructures produced in these composite films. Isochronal annealing for 5 min at temperatures up to 800 deg. C further indicated the potential to improve film crystallinity as well as to establish the post-deposition thermal processing limits of stability for the semiconductor phase. The study highlights the significance of ensemble behavior as a means to influence quantum-scale semiconductor optical characteristics of import to the use of such materials as the basis for a variety of optoelectronic devices, including photosensitized heterojunction components in thin film photovoltaics.

Potter, B. G. Jr. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States); Beal, R. J.; Allen, C. G. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States)

2012-02-01T23:59:59.000Z

240

Nonequilibrium behavior of thin polymer films  

Science Journals Connector (OSTI)

The rheological behavior of 100-nm-thick polystyrene films cast from various solvents was examined using an electric field to weakly perturb the free surface of the polymer melt. The effective viscosity and residual stresses of the as-spun films are seen to strongly depend on the properties of the casting solvent and the solvent quality. Both effects are explained in terms of the coil dimension at the solvent-polymer composition at which the film vitrifies. The more compact chains in a near-?-solvent are less entangled and less deformed when quenched to the dry melt compared to the more swollen chains in an athermal solution. Despite chain conformations that are further from equilibrium for the ?-solvent cast chains, these films have reduced stored stresses compared to the chains cast in films from athermal solvents. A more detailed analysis of the data suggests that the formation of a surface-near region with more strongly deformed chains during spin coating. Since thermal equilibration of spin-cast high-molecular-weight films is unpractical, solvent vapor annealing was used to equilibrate films on timescale of a few hours.

Katherine R. Thomas; Alexis Chenneviere; Günter Reiter; Ullrich Steiner

2011-02-28T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

B{sub 4}C thin films for neutron detection  

SciTech Connect

Due to the very limited availability of {sup 3}He, new kinds of neutron detectors, not based on {sup 3}He, are urgently needed. Here, we present a method to produce thin films of {sup 10}B{sub 4}C, with maximized detection efficiency, intended to be part of a new generation of large area neutron detectors. B{sub 4}C thin films have been deposited onto Al-blade and Si wafer substrates by dc magnetron sputtering from {sup nat}B{sub 4}C and {sup 10}B{sub 4}C targets in an Ar discharge, using an industrial deposition system. The films were characterized with scanning electron microscopy, elastic recoil detection analysis, x-ray reflectivity, and neutron radiography. We show that the film-substrate adhesion and film purity are improved by increased substrate temperature and deposition rate. A deposition rate of 3.8 A/s and substrate temperature of 400 deg. C result in films with a density close to bulk values and good adhesion to film thickness above 3 {mu}m. Boron-10 contents of almost 80 at. % are obtained in 6.3 m{sup 2} of 1 {mu}m thick {sup 10}B{sub 4}C thin films coated on Al-blades. Initial neutron absorption measurements agree with Monte Carlo simulations and show that the layer thickness, number of layers, neutron wavelength, and amount of impurities are determining factors. The study also shows the importance of having uniform layer thicknesses over large areas, which for a full-scale detector could be in total {approx}1000 m{sup 2} of two-side coated Al-blades with {approx}1 {mu}m thick {sup 10}B{sub 4}C films.

Hoeglund, Carina [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linkoeping University, SE-581 83 Linkoeping (Sweden); Birch, Jens; Jensen, Jens; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linkoeping University, SE-581 83 Linkoeping (Sweden); Andersen, Ken; Hall-Wilton, Richard [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Bigault, Thierry; Buffet, Jean-Claude; Correa, Jonathan; Esch, Patrick van; Guerard, Bruno; Piscitelli, Francesco [Institute Laue Langevin, Rue Jules Horowitz, FR-380 00 Grenoble (France); Khaplanov, Anton [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); Institute Laue Langevin, Rue Jules Horowitz, FR-380 00 Grenoble (France); Vettier, Christian [European Spallation Source ESS AB, P.O. Box 176, SE-221 00 Lund (Sweden); European Synchrotron Radiation Facility, BP 220, FR-380 43 Grenoble Cedex 9 (France); Vollenberg, Wilhelmus [Vacuum, Surfaces and Coatings Group (TE/VSC), CERN, CH-1211 Geneva 23 (Switzerland)

2012-05-15T23:59:59.000Z

242

B4C thin films for neutron detection  

Science Journals Connector (OSTI)

Due to the very limited availability of 3He new kinds of neutron detectors not based on 3He are urgently needed. Here we present a method to produce thin films of 10B4C with maximized detection efficiency intended to be part of a new generation of large area neutron detectors. B4C thin films have been deposited onto Al-blade and Si wafer substrates by dc magnetron sputtering from natB4C and 10B4C targets in an Ar discharge using an industrial deposition system. The films were characterized with scanning electron microscopy elastic recoil detection analysis x-ray reflectivity and neutron radiography. We show that the film-substrate adhesion and film purity are improved by increased substrate temperature and deposition rate. A deposition rate of 3.8?Å/s and substrate temperature of 400?°C result in films with a density close to bulk values and good adhesion to film thickness above 3 ?m. Boron-10 contents of almost 80 at. % are obtained in 6.3 m2 of 1 ?m thick 10B4C thin films coated on Al-blades. Initial neutron absorption measurements agree with Monte Carlo simulations and show that the layer thickness number of layers neutron wavelength and amount of impurities are determining factors. The study also shows the importance of having uniform layer thicknesses over large areas which for a full-scale detector could be in total ?1000 m2 of two-side coated Al-blades with ?1 ?m thick 10B4C films.

Carina Höglund; Jens Birch; Ken Andersen; Thierry Bigault; Jean-Claude Buffet; Jonathan Correa; Patrick van Esch; Bruno Guerard; Richard Hall-Wilton; Jens Jensen; Anton Khaplanov; Francesco Piscitelli; Christian Vettier; Wilhelmus Vollenberg; Lars Hultman

2012-01-01T23:59:59.000Z

243

An integrated thin-film thermo-optic waveguide beam deflector Suning Tang,a)  

E-Print Network (OSTI)

An integrated thin-film thermo-optic waveguide beam deflector Suning Tang,a) Bulang Li, and Xinghua for publication 16 February 2000 We have demonstrated the operation of a thin-film thermo-optical beam deflector in a three-layer optical planar waveguide. The fabricated waveguide beam deflector consists of a thin-film Si

Chen, Ray

244

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network (OSTI)

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell hal-00749873,version1-25Nov shortage until 2010. Research on epitaxial growth for thin film crystalline silicon solar cells has gained

245

Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova*  

E-Print Network (OSTI)

1 Mechanics of thin-film transistors and solar cells on flexible substrates Helena Gleskova* , I be minimized throughout the fabrication process. Amorphous silicon thin-film transistors and solar cells, thin-film transistor, solar cell, flexible electronics Phone: (609) 258-4626, Fax: (609) 258-3585, E

246

EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS  

E-Print Network (OSTI)

EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS Yun Seog Lee 1; * Corresponding author: buonassisi@mit.edu; ABSTRACT We investigate earth abundant materials for thin- film solar cuprous oxide (Cu2O) as a prototype candidate for investigation as an absorber layer in thin film solar

Ceder, Gerbrand

247

LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle  

E-Print Network (OSTI)

LBIC ANALYSIS OF THIN-FILM POLYCRYSTALLINE SOLAR CELLS James R. Sites and Timothy J. Nagle Physics response map, was developed and used to map defects in thin-film solar cells [4]. Improvements to the two) measurements are providing a direct link between the spatial non-uniformities inherent in thin-film

Sites, James R.

248

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

Sites, James R.

249

Plasmonic enhancement of thin-film solar cells using gold-black C.J. Fredricksena  

E-Print Network (OSTI)

Plasmonic enhancement of thin-film solar cells using gold-black coatings C.J. Fredricksena , D. R thin-film amorphous-silicon solar cells enhance the short-circuit current by 20% over a broad spectrum and locally enhance the field strength. Keywords: plasmonics, thin-film, solar cell, metallic nanoparticles

Peale, Robert E.

250

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell  

E-Print Network (OSTI)

Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic­4]. In this context, a basic idea is to periodically texture the metallic back reflector of a thin-film solar cell

251

Extended light scattering model incorporating coherence for thin-film silicon solar cells  

E-Print Network (OSTI)

Extended light scattering model incorporating coherence for thin-film silicon solar cells Thomas film solar cells. The model integrates coherent light propagation in thin layers with a direct, non potential for light trapping in textured thin film silicon solar cells. VC 2011 American Institute

Lenstra, Arjen K.

252

Metal-black scattering centers to enhance light harvesting by thin-film solar cells  

E-Print Network (OSTI)

Metal-black scattering centers to enhance light harvesting by thin-film solar cells Deep Panjwania as scattering centers to increase the effective optical thickness of thin-film solar cells. The particular type. Gold-black was deposited on commercial thin-film solar cells using a thermal evaporator in nitrogen

Peale, Robert E.

253

Integrated thin film batteries on silicon  

E-Print Network (OSTI)

Monolithic integration has been implemented successfully in complementary metal oxide semiconductor (CMOS) technology and led to improved device performance, increased reliability, and overall cost reduction. The next ...

Ariel, Nava

2005-01-01T23:59:59.000Z

254

Control of magnetization reversal in oriented strontium ferrite thin films  

SciTech Connect

Oriented Strontium Ferrite films with the c axis orientation were deposited with varying oxygen partial pressure on Al{sub 2}O{sub 3}(0001) substrate using Pulsed Laser Deposition technique. The angle dependent magnetic hysteresis, remanent coercivity, and temperature dependent coercivity had been employed to understand the magnetization reversal of these films. It was found that the Strontium Ferrite thin film grown at lower (higher) oxygen partial pressure shows Stoner-Wohlfarth type (Kondorsky like) reversal. The relative importance of pinning and nucleation processes during magnetization reversal is used to explain the type of the magnetization reversal with different oxygen partial pressure during growth.

Roy, Debangsu, E-mail: debangsu@physics.iisc.ernet.in; Anil Kumar, P. S. [Department of Physics, Indian Institute of Science, Bangalore 560012 (India)

2014-02-21T23:59:59.000Z

255

Organic Thin Film Magnet of Nickel-Tetracyanoethylene  

SciTech Connect

Hybrid organic-inorganic materials consisting of a transition metal and an organic compound, TCNE form a unique class of organic magnets denoted by M(TCNE){sub x}(where M = transition metals, and TCNE = tetracyanoethylene). The organic thin film magnet of nickel-tetracyanoethylene, Ni(TCNE){sub x} is deposited on sputtered clean gold substrate using the physical vapor deposition (PVD) technique under ultra high vacuum (UHV) conditions at room temperature. X-ray photoelectron spectroscopy (XPS) has been used to investigate chemical and electronic properties of Ni(TCNE){sub x} film. XPS derived film thickness and stoichiometry are found to be 6 nm and 1:2 ratio between Ni and TCNE resulting Ni(TCNE){sub 2} film, respectively. In addition, XPS results do not show any signature of the presence of pure metallic Ni or Ni-clustering in the Ni(TCNE){sub x} film.

Bhatt, Pramod; Yusuf, S. M. [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

2011-07-15T23:59:59.000Z

256

Stripe Domain-Structures in a Thin Ferromagnetic Film  

E-Print Network (OSTI)

We present a theory of the stripe domain structure in a thin ferromagnetic film with single-ion easy-axis magnetic anisotropy and long-range dipole interactions, for a wide range of temperatures and applied magnetic field. The domains exist...

KASHUBA, AB; Pokrovsky, Valery L.

1993-01-01T23:59:59.000Z

257

Method of preparing thin film polymeric gel electrolytes  

DOE Patents (OSTI)

Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

Derzon, Dora K. (Albuquerque, NM); Arnold, Jr., Charles (Albuquerque, NM)

1997-01-01T23:59:59.000Z

258

Synthesis and Characterization of Functional Nanostructured Zinc Oxide Thin Films  

E-Print Network (OSTI)

.1149/1.2357098, copyright The Electrochemical Society 65 #12;66 reduced environmental impact and a minimum undesirable inter-temperature thin film growth technique has been developed to fabricate a new generation of smart and functional and structural requirements of their applications in gas sensors and solar cells. The rapid photothermal

Chow, Lee

259

Preparation and characterization of TL-based superconducting thin films  

E-Print Network (OSTI)

A simple method for growth of Tl-based superconducting thin films is described. In this method, the precursor was prepared in a vacuum chamber by deposition of Ba, Ca and Cu metals or a Ba-Ca alloy and Cu metal. The precursor was then oxidized...

Wang, Pingshu

2012-06-07T23:59:59.000Z

260

Printing Highly-aligned Single-crystalline Organic Electronic Thin Films |  

NLE Websites -- All DOE Office Websites (Extended Search)

Printing Highly-aligned Single-crystalline Organic Electronic Thin Films Printing Highly-aligned Single-crystalline Organic Electronic Thin Films Monday, September 23, 2013 Organic semiconductor materials have some intriguing advantages compared to their inorganic counterparts: low-cost and versatile manufacturing (e.g. roll-to-roll printing), material abundance and new form factors (e.g. flexible, transparent and stretchable). However, solution-processed organic devices are usually made and optimized with poorly scalable fabrication using lab-based techniques such as spin coating or dip coating. A better route for organic-electronics fabrication is printing, which can potentially realize large-area, high-throughput, low-cost fabrication on an industrial scale. Fluence image FLUENCE: fluid-enhanced crystal engineering. Solution shearing (a) using a

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Preparation of room temperature terahertz detector with lithium tantalate crystal and thin film  

SciTech Connect

Research on room temperature terahertz (THz) detector is essential for promoting the application of THz science and technology. Both lithium tantalate crystal (LiTaO{sub 3}) and lithium tantalate thin film were used to fabricate the THz detector in this paper. Polishing process were used to reduce the thickness of LiTaO{sub 3} crystal slice by chemical mechanical polishing techniques and an improved sol-gel process was used to obtain high concentration LiTaO{sub 3} precursor solution to fabricate LiTaO{sub 3} thin film. Three dimension models of two THz detectors were set up and the temperature increasing map of two devices were simulated using finite element method. The lowest noise equivalent power value for terahertz detector using pyroelectric material reaches 6.8 × 10{sup ?9} W at 30 Hz operating frequency, which is suitable for THz imaging application.

Wang, Jun, E-mail: ueoewj@gmail.com; Gou, Jun; Li, Weizhi [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China)] [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China)

2014-02-15T23:59:59.000Z

262

Research on the electronic and optical properties of polymer and other organic molecular thin films  

SciTech Connect

The main goal of the work is to find materials and methods of optimization of organic layered electroluminescent cells and to study such properties of polymers and other organic materials that can be used in various opto-electronic devices. The summary of results obtained during the first year of work is presented. They are: (1) the possibility to produce electroluminescent cells using a vacuum deposition photoresist technology for commercial photoresists has been demonstrated; (2) the idea to replace the polyaryl polymers by other polymers with weaker hole conductivity for optimization of electroluminescent cells with ITO-Al electrodes has been suggested. The goal is to obtain amorphous processable thin films of radiative recombination layers in electroluminescent devices; (3) procedures of preparation of high-quality vacuum-deposited poly (p-phenylene) (PPP) films on various substrates have been developed; (4) it was found for the first time that the fluorescence intensity of PPP films depends on the degree of polymerization; (5) the role of interfaces between organic compounds, on one side, and metals or semiconductors, on the other side, has been studied and quenching of the fluorescence caused by semiconductor layer in thin sandwiches has been observed; (6) studies of the dynamics of photoexcitations revealed the exciton self-trapping in quasi-one-dimensional aggregates; and (7) conditions for preparation of highly crystalline fullerene C{sub 60} films by vacuum deposition have been found. Composites of C{sub 60} with conjugated polymers have been prepared.

NONE

1997-02-01T23:59:59.000Z

263

LIQUID PHASE DEPOSITION OF ELECTROCHROMIC THIN FILMS T. J. Richardson and M. D. Rubin  

E-Print Network (OSTI)

1 LIQUID PHASE DEPOSITION OF ELECTROCHROMIC THIN FILMS T. J. Richardson and M. D. Rubin electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared, and readily scalable to larger substrates. Keywords: liquid phase deposition; electrochromic films; thin film

264

Pyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stresses  

SciTech Connect

Ferroelectric lead zirconate titanate [Pb(Zr{sub x}Ti{sub 1-x}O){sub 3}, (PZT x:1-x)] has received considerable interest for applications related to uncooled infrared devices due to its large pyroelectric figures of merit near room temperature, and the fact that such devices are inherently ac coupled, allowing for simplified image post processing. For ferroelectric films made by industry-standard deposition techniques, stresses develop in the PZT layer upon cooling from the processing/growth temperature due to thermal mismatch between the film and the substrate. In this study, we use a non-linear thermodynamic model to investigate the pyroelectric properties of polycrystalline PZT thin films for five different compositions (PZT 40:60, PZT 30:70, PZT 20:80, PZT 10:90, PZT 0:100) on silicon as a function of processing temperature (25–800?°C). It is shown that the in-plane thermal stresses in PZT thin films alter the out-of-plane polarization and the ferroelectric phase transformation temperature, with profound effect on the pyroelectric properties. PZT 30:70 is found to have the largest pyroelectric coefficient (0.042??C cm{sup ?2}?°C{sup ?1}, comparable to bulk values) at a growth temperature of 550?°C; typical to what is currently used for many deposition processes. Our results indicate that it is possible to optimize the pyroelectric response of PZT thin films by adjusting the Ti composition and the processing temperature, thereby, enabling the tailoring of material properties for optimization relative to a specific deposition process.

Kesim, M. T.; Zhang, J.; Alpay, S. P. [Department of Materials Science and Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269 (United States); Trolier-McKinstry, S. [Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, Pennsylvania 16802 (United States); Mantese, J. V. [United Technologies Research Center, East Hartford, Connecticut 06118 (United States); Whatmore, R. W. [Tyndall National Institute, Lee Maltings, Dyke Parade, Cork City, County Cork (Ireland)

2013-11-28T23:59:59.000Z

265

Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor  

E-Print Network (OSTI)

The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

Nominanda, Helinda

2012-06-07T23:59:59.000Z

266

Novel wide band gap materials for highly efficient thin film tandem solar cells  

SciTech Connect

Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PV�s goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a mixture of solution and physical vapor deposition processing, but these films lacked the p-type doping levels that are required to make decent solar cells. Over the course of the project PLANT PV was able to fabricate efficient CIGS solar cells (8.7%) but could not achieve equivalent performance using AIGS. During the nine-month grant PLANT PV set up a variety of thin film characterization tools (e.g. drive-level capacitance profiling) at the Molecular Foundry, a Department of Energy User Facility, that are now available to both industrial and academic researchers via the grant process. PLANT PV was also able to develop the back end processing of thin film solar cells at Lawrence Berkeley National Labs to achieve 8.7% efficient CIGS solar cells. This processing development will be applied to other types of thin film PV cells at the Lawrence Berkeley National Labs. While PLANT PV was able to study AIGS film growth and optoelectronic properties we concluded that AIGS produced using these methods would have a limited efficiency and would not be commercially feasible. PLANT PV did not apply for the Phase II of this grant.

Brian E. Hardin, Stephen T. Connor, Craig H. Peters

2012-06-11T23:59:59.000Z

267

Photoconductivity in reactively evaporated copper indium selenide thin films  

SciTech Connect

Copper indium selenide thin films of composition CuInSe{sub 2} with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10{sup ?5} mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe{sub 2} films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (?) of 10{sup 6} cm{sup ?1} at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe{sub 2} thin films indicate its suitability in photovoltaic applications.

Urmila, K. S., E-mail: urmilaks7@gmail.com; Asokan, T. Namitha, E-mail: urmilaks7@gmail.com; Pradeep, B., E-mail: urmilaks7@gmail.com [Solid State Physics Laboratory, Cochin University of Science and Technology, Kochi, Kerala (India); Jacob, Rajani; Philip, Rachel Reena [Thin Film Research Laboratory, Union Christian College, Aluva, Kerala (India)

2014-01-28T23:59:59.000Z

268

Ultra-thin titanium nanolayers for plasmon-assisted enhancement of bioluminescence of chloroplast in biological light emitting devices  

SciTech Connect

Ultra-thin titanium films were deposited via ultra-high vacuum ion beam sputter deposition. Since the asymmetric electric field of the metal foil plane matches the B-band absorption of chlorophyll a, the ultra-thin titanium nanolayers were able to generate surface plasmon resonance, thus enhancing the photoluminescence of chlorophyll a. Because the density of the states of plasmon resonance increases, the enhancement of photoluminescence also rises. Due to the biocompatibility and inexpensiveness of titanium, it can be utilized to enhance the bioluminescence of chloroplast in biological light emitting devices, bio-laser, and biophotonics.

Hsun Su, Yen [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China) [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Hsu, Chia-Yun; Chang, Chung-Chien [Science and Technology of Accelerator Light Source, Hsinchu 300, Taiwan (China) [Science and Technology of Accelerator Light Source, Hsinchu 300, Taiwan (China); Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Tu, Sheng-Lung; Shen, Yun-Hwei [Department of Resource Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)] [Department of Resource Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)

2013-08-05T23:59:59.000Z

269

Structure-stress-resistivity relationship in WTi alloy ultra-thin and thin films prepared by magnetron sputtering  

Science Journals Connector (OSTI)

WTi thin films were prepared from an alloyed target (W:Ti ? 70:30?at. %) by magnetron sputtering. Body-centered cubic W x T i 1 ? x solid solutions with a { 110 } fiber texture and columnar grains have been produced with 0.75 WTi thin films is about 60 ? 200 ? ? ? ? cm depending on the film thickness and microstructure (sputtering conditions). For both ultra-thin (9.5?nm) and thin (180?nm) films a stress transition from compressive to tensile is observed as the working pressure increases. The process-structure-property relations of the WTi ultra-thin and thin films are discussed in relation with the state of the art.

P.-O. Renault

2013-01-01T23:59:59.000Z

270

Thin Solid Films 430 (2003) 125129 0040-6090/03/$ -see front matter 2003 Elsevier Science B.V. All rights reserved.  

E-Print Network (OSTI)

for a-Si:H solar cell fabrication. In addition to photovoltaic applications, a-Si:H is also used of amorphous silicon (a-Si:H)-based photovoltaic devices, it is important to deposit high- quality a progress has been made in hydrogenated amorphous silicon (a-Si:H)-based thin film photovoltaic devices

Deng, Xunming

271

Abstract--In this paper, the propagation characteristics of an enhanced-thickness magnetic nanoparticle thin film are  

E-Print Network (OSTI)

nanoparticle thin film are investigated on high resistivity silicon substrate (10,000 ohm-cm) for the first time up to 60 GHz. Contrary to other thin films, this nanoparticle thin film can achieve a thickness up. Index Terms-- Magnetic thin film, Nanoparticle, Coplanar waveguide, high-permeability materials, FGC I

Tentzeris, Manos

272

Quantum states of neutrons in magnetic thin films  

SciTech Connect

We have studied experimentally and theoretically the interaction of polarized neutrons with magnetic thin films and magnetic multilayers. In particular, we have analyzed the behavior of the critical edges for total external reflection in both cases. For a single film we have observed experimentally and theoretically a simple behavior: the critical edges remain fixed and the intensity varies according to the angle between the polarization axis and the magnetization vector inside the film. For the multilayer case we find that the critical edges for spin-up and spin-down polarized neutrons move toward each other as a function of the angle between the magnetization vectors in adjacent ferromagnetic films. Although the results for multilayers and single thick layers appear to be different, in fact, the same spinor method explains both results. An interpretation of the critical edges behavior for the multilyers as a superposition of ferromagnetic and antifferomagnetic states is given.

Radu, F.; Zabel, H. [Department of Physics, Ruhr-University Bochum, D- 44780 Bochum (Germany); Leiner, V. [Institut fuer Werkstoffforschung WFN, GKSS Forschungszentrum GmbH, 21502 Geesthacht (Germany); Wolff, M. [Department of Physics, Ruhr-University Bochum, D- 44780 Bochum (Germany); Institut Laue-Langevin, F-38042 Grenoble Cedex 9 (France); Ignatovich, V.K. [Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, 141980, Dubna Moscow Region (Russian Federation)

2005-06-01T23:59:59.000Z

273

Thermal Conductivity in Nanocrystalline Ceria Thin Films  

SciTech Connect

The thermal conductivity of nanocrystalline ceria films grown by unbalanced magnetron sputtering is determined as a function of temperature using laser-based modulated thermoreflectance. The films exhibit significantly reduced conductivity compared with stoichiometric bulk CeO2. A variety of microstructure imaging techniques including X-ray diffraction, scanning and transmission electron microscopy, X-ray photoelectron analysis, and electron energy loss spectroscopy indicate that the thermal conductivity is influenced by grain boundaries, dislocations, and oxygen vacancies. The temperature dependence of the thermal conductivity is analyzed using an analytical solution of the Boltzmann transport equation. The conclusion of this study is that oxygen vacancies pose a smaller impediment to thermal transport when they segregate along grain boundaries.

Marat Khafizov; In-Wook Park; Aleksandr Chernatynskiy; Lingfeng He; Jianliang Lin; John J. Moore; David Swank; Thomas Lillo; Simon R. Phillpot; Anter El-Azab; David H. Hurley

2014-02-01T23:59:59.000Z

274

Joint Development of Coated Conductor and Low Cost Thin Film Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-007-213  

SciTech Connect

UES plans on developing CIGS thin films by using Metal Organic Deposition (MOD) technique as it is a low-cost, non-vacuum method for scale-up to large area PV modules. NREL will support UES, Inc. through expert processing, characterization and device fabrication. NREL scientists will also help develop a processing phase diagram which includes composition, film thickness, annealing temperature and ambient conditions. Routine measurements of devices and materials will be done under NREL's core support project.

Bhattacharya, R.

2011-02-01T23:59:59.000Z

275

Thermal Characterizationof Thin Film Superlattice Micro Refrigerators  

E-Print Network (OSTI)

components that can provide localized cooling or heating. Traditional thermo electric effect that can provide Xiaofeng Fan, Gehong Zeng, Chris Labounty,and John E. Bowers Electrical and Computer]. In this paper fabrication and characterization of SiGe superlattice coolers is described. The p- type device

276

Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint  

SciTech Connect

The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

2011-09-01T23:59:59.000Z

277

Engineering Thin-Film Oxide Interfaces | Advanced Photon Source  

NLE Websites -- All DOE Office Websites (Extended Search)

Novel Materials Become Multifunctional at the Ultimate Quantum Limit Novel Materials Become Multifunctional at the Ultimate Quantum Limit Outsmarting Flu Viruses How Lead-Free Solder (Mis)Behaves under Stress Dynamics of Polymer Chains Atop Different Materials Priming the Pump in the Fight against Drug-Resistant Tuberculosis Science Highlights Archives: 2013 | 2012 | 2011 | 2010 2009 | 2008 | 2007 | 2006 2005 | 2004 | 2003 | 2002 2001 | 2000 | 1998 | Subscribe to APS Science Highlights rss feed Engineering Thin-Film Oxide Interfaces NOVEMBER 12, 2012 Bookmark and Share LAO thin films on STO substrates are depicted in the top schematics (LAO indicated by blue spheres, STO by green spheres). The top left-hand panel demonstrates a chemically broad interface resulting from conventional growth in a low pressure oxygen environment. In contrast, the top

278

NREL: Energy Analysis - Crystalline Silicon and Thin Film Photovoltaic  

NLE Websites -- All DOE Office Websites (Extended Search)

Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Assessment Harmonization Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics (Fact Sheet) Cover of the Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics factsheet Download the Fact Sheet Over the last 30 years, hundreds of life cycle assessments (LCAs) have been conducted and published for a variety of residential and utility-scale solar photovoltaic (PV) systems with wide-ranging results. The inconsistencies in these results can be attributed to the technologies evaluated-such as differing system designs, real-world versus conceptual systems, or technology improvements over time-and life cycle assessment methods and assumptions. To better understand greenhouse gas (GHG) emissions from commercial

279

Thin-Film Reliability Trends Toward Improved Stability  

SciTech Connect

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (R{sub d}) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2 {+-} 0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-01-01T23:59:59.000Z

280

Thin-Film Reliability Trends Toward Improved Stability: Preprint  

SciTech Connect

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (Rd) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2+/-0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Method for formation of thin film transistors on plastic substrates  

DOE Patents (OSTI)

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

1998-10-06T23:59:59.000Z

282

Method for formation of thin film transistors on plastic substrates  

DOE Patents (OSTI)

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

1998-10-06T23:59:59.000Z

283

Surface oxidation of Permalloy thin films  

SciTech Connect

The chemical and magnetic structures of oxides on the surface of Permalloy Ni{sub 81}Fe{sub 19} films were investigated as functions of annealing time with x-ray and polarized neutron reflectometry. For annealing times of less than one hour, the oxide consisted of a 1.5-nm-thick layer of NiO on an Fe oxide layer that was in contact with Permalloy. The Fe oxide thickness increases with annealing time with a parabolic rate constant of 10{sup -18} cm{sup 2} s{sup -1} (for an annealing temperature of 373 K). The growth of the oxide layer is limited by the rate at which oxygen appears below the NiO layer. No portion of the oxide region was found to be ferromagnetically ordered for films annealed less than one hour. The growth of the Fe oxide region is well correlated with the measured increase of the second-order magnetic susceptibility for similarly prepared samples.

Fitzsimmons, M. R.; Crawford, T. M. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Silva, T. J. [National Institute of Standards and Technology, Boulder, Colorado 80303 (United States)

2006-01-01T23:59:59.000Z

284

Giant intrinsic tunnel magnetoresistance in manganite thin films etched with antidot arrays  

SciTech Connect

Huge intrinsic tunnel magnetoresistance effects at low field are demonstrated in macroscopic La{sub 0.33}Pr{sub 0.34}Ca{sub 0.33}MnO{sub 3} thin films etched with periodic antidot arrays, and a highest magnetoresistance ratio (about 1600%) is achieved at 58?K. Such giant tunnel magnetoresistance effect might originate from delicate phase separation and coherent transport under the applied periodic spatial confinement. Strong transport fluctuation is also revealed in such systems due to phase competition. Our findings pave a way to realize tunnel magnetoresistance devices based on electronically phase separated materials with spatial modulations.

Li, Hui; Li, Lin; Li, Long; Liang, Haixing; Cheng, Long; Zhai, Xiaofang [Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026 (China); Zeng, Changgan, E-mail: cgzeng@ustc.edu.cn [Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026 (China); Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)

2014-02-24T23:59:59.000Z

285

Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence  

SciTech Connect

It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, inline tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

2011-01-01T23:59:59.000Z

286

Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint  

SciTech Connect

It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

2011-07-01T23:59:59.000Z

287

Method for making dense crack free thin films  

DOE Patents (OSTI)

The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

Jacobson, Craig P. (Lafayette, CA); Visco, Steven J. (Berkeley, CA); De Jonghe, Lutgard C. (Lafayette, CA)

2007-01-16T23:59:59.000Z

288

Ultra-Thin Metal Films for Enhanced Solar Absorption  

E-Print Network (OSTI)

This paper presents modelled results for optical absorption in ultra-thin films of nickel, gold and silver over the solar spectrum. It is found in the case of nickel there is an optimum thickness for maximum solar absorption around 10-13nm. This effect is not observed for gold or silver. It is postulated that this is an interference effect occurring due the particular real and imaginary refractive profile of nickel across the solar spectrum.

Ahmad, N; Teng, M; Cryan, M J

2012-01-01T23:59:59.000Z

289

Synthesis of thin films and materials utilizing a gaseous catalyst  

DOE Patents (OSTI)

A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

2013-10-29T23:59:59.000Z

290

Formation of thin-film resistors on silicon substrates  

DOE Patents (OSTI)

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

1988-11-01T23:59:59.000Z

291

FTIR (Fourier transform infrared) spectrophotometry for thin film monitors: Computer and equipment integration for enhanced capabilities  

SciTech Connect

Fourier transform infrared spectrophotometry (FTIR) is a valuable technique for monitoring thin films used in semiconductor device manufacture. Determinations of the constituent contents in borophosphosilicate (BPSG), phosphosilicate (PSG), silicon oxynitride (SiON:H,OH), and spin-on-glass (SOG) thin films are a few applications. Due to the nature of the technique, FTIR instrumentation is one of the most extensively computer-dependent pieces of equipment that is likely to be found in a microelectronics plant. In the role of fab monitor or reactor characterization tool, FTIR instruments can rapidly generate large amounts of data. By linking a local FTIR data station to a remote minicomputer its capabilities are greatly improved. We discuss three caused of enhancement. First, the FTIR in the fab area communicates and interacts in real time with the minicomputer: transferring data segments to it, instructing it to perform sophisticated processing, and returning the result to the operator in the fab. Characterizations of PSG thin films by this approach are discussed. Second, the spectra of large numbers of samples are processed locally. The large database is then transmitted to the minicomputer for study by statistical/graphics software. Results of CVD-reactor spatial profiling experiments for plasma SiON are presented. Third, processing of calibration spectra is performed on the minicomputer to optimize the accuracy and precision of a Partial Least Squares'' analysis mode. This model is then transferred to the data station in the fab. The analysis of BPSG thin films is discussed in this regard. The prospects for fully automated at-line monitoring and for real-time, in-situ monitoring will be discussed. 10 refs., 4 figs.

Cox, J.N.; Sedayao, J.; Shergill, G.; Villasol, R. (Intel Corp., Santa Clara, CA (USA)); Haaland, D.M. (Sandia National Labs., Albuquerque, NM (USA))

1990-01-01T23:59:59.000Z

292

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components  

SciTech Connect

There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.

Subramanyam, Guru, E-mail: gsubramanyam1@udayton.edu [Department of Electrical and Computer Engineering, University of Dayton, Dayton, Ohio 45469 (United States); Cole, M. W., E-mail: melanie.w.cole.civ@mail.mil [U.S. Army Research Laboratory, Weapons and Materials Research Directorate, Aberdeen Proving Ground, Maryland 21005 (United States); Sun, Nian X. [Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States); Kalkur, Thottam S. [Department of Electrical and Computer Engineering, University of Colorado, Colorado Springs, Colorado 80918 (United States); Sbrockey, Nick M.; Tompa, Gary S. [Structured Materials Industries, Inc., Piscataway, New Jersey 08854 (United States); Guo, Xiaomei [Boston Applied Technologies, Inc., Woburn, Massachusetts 01801 (United States); Chen, Chonglin [Department of Physics and Astronomy, University of Texas, San Antonio, Texas 78249 (United States); Alpay, S. P.; Rossetti, G. A. [Institute of Materials Science and Materials Science and Engineering Program, University of Connecticut, Storrs, Connecticut 06269 (United States); Dayal, Kaushik [Mechanics, Materials and Computing, Civil and Environmental Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Chen, Long-Qing [Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802 (United States); Schlom, Darrell G. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States); Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States)

2013-11-21T23:59:59.000Z

293

Electric Field Induced Sphere-to-Cylinder Transition in Diblock Copolymer Thin Films  

E-Print Network (OSTI)

Electric Field Induced Sphere-to-Cylinder Transition in Diblock Copolymer Thin Films Ting Xu, A. V Manuscript Received June 21, 2004 ABSTRACT: An electric field induced sphere-to-cylinder transition in thin. In the absence of an applied electric field, thin films of the asymmetric diblock copolymer consisted of layers

Ocko, Ben

294

Thin crystalline silicon solar cells based on epitaxial films grown at 165C by RF PECVD  

E-Print Network (OSTI)

1 Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF PECVD Romain temperatures. Keywords : Low temperature, epitaxy, PECVD, Si thin film, Solar cell #12;2 1. Introduction: martin.labrune@polytechnique.edu ABSTRACT We report on heterojunction solar cells whose thin intrinsic

295

Electrical characteristics of Ta2O5 thin films deposited by electron beam gun evaporation  

E-Print Network (OSTI)

Electrical characteristics of Ta2O5 thin films deposited by electron beam gun evaporation V films deposited by a simple electron beam gun evaporator. We describe thicknessO5 thin films deposited by a simple electron beam gun evaporator which enables versatility

Eisenstein, Gadi

296

High-throughput analysis of thin-film stresses using arrays of micromachined cantilever beams  

E-Print Network (OSTI)

High-throughput analysis of thin-film stresses using arrays of micromachined cantilever beams Hyun-throughput residual stress measurements on thin films by means of micromachined cantilever beams and an array of parallel laser beams. In this technique, the film of interest is deposited onto a silicon substrate

297

Sputter deposition for multi-component thin films  

DOE Patents (OSTI)

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

Krauss, Alan R. (Plainfield, IL); Auciello, Orlando (Cary, NC)

1990-01-01T23:59:59.000Z

298

Sputter deposition for multi-component thin films  

DOE Patents (OSTI)

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

Krauss, A.R.; Auciello, O.

1990-05-08T23:59:59.000Z

299

Decay Processes in the Presence of Thin Superconducting Films  

E-Print Network (OSTI)

In a recent paper [Phys. Rev. Lett. 97, 070401 (2006)] the transition rate of magnetic spin-flip of a neutral two-level atom trapped in the vicinity of a thick superconducting body was studied. In the present paper we will extend these considerations to a situation with an atom at various distances from a dielectric film. Rates for the corresponding electric dipole-flip transition will also be considered. The rates for these atomic flip transitions can be reduced or enhanced, and in some situations they can even be completely suppressed. For a superconducting film or a thin film of a perfect conducting material various analytical expressions are derived that reveals the dependence of the physical parameters at hand.

Per K. Rekdal; Bo-Sture K. Skagerstam

2006-09-20T23:59:59.000Z

300

Spectroscopic ellipsometry characterization of thin-film silicon nitride  

SciTech Connect

We have measured and analyzed the optical characteristics of a series of silicon nitride thin films prepared by plasma-enhanced chemical vapor deposition on silicon substrates for photovoltaic applications. Spectroscopic ellipsometry measurements were made by using a two-channel spectroscopic polarization modulator ellipsometer that measures N, S, and C data simultaneously. The data were fit to a model consisting of air / roughness / SiN / crystalline silicon. The roughness was modeled using the Bruggeman effective medium approximation, assuming 50% SiN, 50% voids. The optical functions of the SiN film were parameterized using a model by Jellison and Modine. All the {Chi}{sup 2} are near 1, demonstrating that this model works extremely well for all SiN films. The measured dielectric functions were used to make optimized SiN antireflection coatings for crystalline silicon solar cells.

Jellison, G.E. Jr.; Modine, F.A. [Oak Ridge National Lab., TN (United States); Doshi, P.; Rohatgi, A. [Georiga Inst. of Technology, Atlanta, GA (United States)

1997-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Long-laser-pulse method of producing thin films  

DOE Patents (OSTI)

A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agen The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.

Balooch, Mehdi (Berkeley, CA); Olander, Donald K. (Berkeley, CA); Russo, Richard E. (Walnut Creek, CA)

1991-01-01T23:59:59.000Z

302

Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy  

SciTech Connect

Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructure after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases.

Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zhang, Yanmin; Hu, Ran; Ren, Naifei [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of mechanical engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-11-14T23:59:59.000Z

303

Boron arsenide thin film solar cell development. Final report  

SciTech Connect

Pyrolytic decomposition of diborane and arsine has been used in attempts to grow polycrystalline BAs films. This method, however, produced only amorphous films for deposition temperatures below 920/sup 0/C and polycrystalline boron subarsenide (B/sub 12/As/sub 2/) flms for deposition temperatures above this value. The amorphous films have been determined to have a significant arsenic content but the actual stoichiometry was not obtained. The films were adherent on single crystal sapphire (0001), (111) silicon, (0001) SiC, and polycrystalline SiC but were found not to be adherent to substrates of fused quartz, tungsten, and molybdenum. It was also found that all films deposited above 650/sup 0/C were p-type while those deposited below 600/sup 0/C were usually n-type. Polycrystalline BAs and B/sub 12/As/sub 2/ was produced by reaction of the elements in a closed tube. The amorphous films showed an indirect or non-direct optical bandgap from 1.0 to 1.7 eV with the most probable values between 1.2 to 1.4 eV. The crystalline BAs powder shows a bandgap near 1.0 eV. Photoconductance time constants have been measured for films deposited on (0001) sapphire and (0001) SiC. Attempts at doping the amorphous films were generally unsuccessful. A polycrystalline powder sample was successfully doped with sulfur. Attempts were made to produce a Schottky barrier diode by evaporating Al dots onto an amorphous film on graphite without a post-evaporation anneal. An MIS structure was also attempted by baking an amorphous film in air at 280/sup 0/C before evaporation of aluminum. Although nonlinear characteristics were obtained, none of the devices showed any photovoltaic response. A p-type amorphous film was deposited on an n-type silicon substrate to form a p-n heterojunction. This device did exhibit a photovoltaic response but it is believed that the photogeneration was occurring primarily in the silicon substrate.

Boone, J.L.; Van Doren, T.P.

1980-09-01T23:59:59.000Z

304

Thin?film temperature sensors for gas turbine engines: Problems and prospects  

Science Journals Connector (OSTI)

The increasing trend towards high?temperature fuel efficient jet engines has led to the development of complex cooling schemes for the turbine blades. The measurement of temperature of the blade during operation which is accomplished in conventional blade design by embedding wire thermocouples in the blade wall causes serious structural and aerodynamic problems in the case of cooled turbines. In order to meet the requirement of temperature measurement in cooled turbines it is desirable to develop surface?mounted thin?film thermocouples or a resistance thermometer. In the current state of the art of thin?film thermocouples the sensing element consists of 2??m?thick Pt and Pt 10% Rh thin?film elements deposited on the insulating surface of the blades and vanes. The insulator is developed by thermal oxidation of a MCrAlY coating which is deposited on the blade and vane surface in the current state of turbine technology. The understanding of the structural and thermoelectric stability of the sensor elements and of the insulating layer of Al2O3 in the hostile environment of a gas turbine requires an in?depth study of the metallurgical reactions occurring at the thin?film Al2O3 and Al2O3–MCrAlY interfaces and of the corrosive reactions on the surface of the metal film. The work presented in this review addresses the problems associated with obtaining highly adherent and insulating Al2O3 on the MCrAlY surfaces adhesion of the sensor elements thermoelectric stability of the sensors on contamination and finally the development of a corrosion protectioncoating. The desired quality Al2O3 has been grown on NiCoCrAlY?coated nickel?based superalloy substrates by a combination of oxidation treatments. The interface?modified Pt and Pt/Rh films are deposited on the oxide by a dc magnetron sputtering technique. The corrosion protection requirements involve deposition of Si–O–N and Si3N4 graded structures on the sensors by the plasma?assisted chemical vapor deposition process. Details of the electrical and metallurgical characteristics of the device at each stage of the coating/film growth have been analyzed by a number of surface sensitive and bulk analytical techniques.

R. C. Budhani; S. Prakash; R. F. Bunshah

1986-01-01T23:59:59.000Z

305

Comparative studies of optical and elastic properties of ZrO{sub 2} thin films prepared under normal and oblique incidence deposition geometries  

SciTech Connect

Oblique angle deposited optical thin films have attracted recent researcher’s interest because of their attractive optical, micro-structural, mechanical properties and more importantly because of their great potential in achieving tunability in refractive index. These properties in turn make it important in case of designing different optical devices. In the present work, ZrO{sub 2} thin films have been deposited on fused silica substrate by electron beam evaporation technique in normal as well as oblique angle deposition configurations. Optical properties, especially refractive index of the films have been estimated by fitting the measured transmission spectra with suitable theoretical dispersion models. Atomic force microscopy has been employed to characterize morphological properties of samples. The elastic properties of both the films are estimated by Atomic Force Acoustic Microscopy, a new and highly sensitive technique for thin films.

Sarkar, P., E-mail: piyali.sarkar4@gmail.com; Tokas, R. B., E-mail: piyali.sarkar4@gmail.com; Jena, S., E-mail: piyali.sarkar4@gmail.com; Thakur, S., E-mail: piyali.sarkar4@gmail.com; Sahoo, N. K., E-mail: piyali.sarkar4@gmail.com [Atomic and Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

2014-04-24T23:59:59.000Z

306

Solar Thin Films Inc formerly American United Global Inc | Open Energy  

Open Energy Info (EERE)

Films Inc formerly American United Global Inc Films Inc formerly American United Global Inc Jump to: navigation, search Name Solar Thin Films Inc (formerly American United Global Inc) Place New York, New York Zip 10038 Sector Solar Product A US-based solar manufacturing equipment supplier. References Solar Thin Films Inc (formerly American United Global Inc)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Thin Films Inc (formerly American United Global Inc) is a company located in New York, New York . References ↑ "Solar Thin Films Inc (formerly American United Global Inc)" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Thin_Films_Inc_formerly_American_United_Global_Inc&oldid=351338

307

Preparation of silicon carbide film by a plasma focus device  

Science Journals Connector (OSTI)

Silicon carbide (SiC) films were grown on the silicon (100) substrate by a 20 kJ Mather-type dense plasma focus device. The preparation method and characterization data are presented. X-ray diffractometer (XRD), Fourier transform infrared spectroscopy (FTIR), field-emission scanning electron microscopy (SEM) and nano-indentor were employed for the characterization of the samples obtained at different axial position of 50 mm, 90 mm, 130 mm and 170 mm, respectively. Polycrystalline 3CSiC were obtained at the position of 90 mm and 130 mm from XRD and FTIR spectra. SEM image showed that the silicon carbide films obtained at the position of 90 mm are porous on surface layer. Nano-indentor indicates that the film obtained at the position of 130 mm has the highest mechanical hardness.

Z.P. Wang; H.R. Yousefi; Y. Nishino; H. Ito; K. Masugata

2008-01-01T23:59:59.000Z

308

Thin film reactions on alloy semiconductor substrates  

SciTech Connect

The interactions between Pt and In{sub .53}Ga{sub .47}As have been studied. In{sub .53}Ga{sub .47}As substrates with 70nm Pt films were encapsulated in SiO{sub 2}, and annealed up to 600{degree}C in flowing forming gas. The composition and morphology of the reaction product phases were studied using x-ray diffraction, Auger depth profiling, and transmission electron microscopy. The reaction kinetics were examined with Rutherford Backscattering. Results show that Pt/In{sub .53}Ga{sub .47}As reacts to form many of the reaction products encountered in the Pt/GaAs and Pt/InP reactions: PtGa, Pt{sub 3}Ga, and PtAs{sub 2}. In addition, a ternary phase, Pt(In:Ga){sub 2}, develops, which is a solid solution between PtIn{sub 2} and PtGa{sub 2}. The amount of Ga in the ternary phase increases with annealing temperature, which causes a decrease in the lattice parameter of the phase. The reaction products show a tendency to form layered structures, especially for higher temperatures and longer annealing times. Unlike the binary case, the PtAs{sub 2}, phase is randomly oriented on the substrate, and is intermingle with a significant amount of Pt(In:Ga){sub 2}. Following Pt/In{sub .53}Ga{sub .47}As reactions, two orientation relationships between the Pt(In:Ga){sub 2} product phase and the substrate were observed, despite the large mismatch with the substrate ({approximately}8%). For many metal/compound semiconductor interactions, the reaction rate is diffusion limited, i.e. exhibits a parabolic dependence on time. An additional result of this study was the development of an In-rich layer beneath the reacted layer. The Auger depth profile showed a substantial increase in the sample at this layer. This is a significant result for the production of ohmic contacts, as the Schottky barrier height in this system lower for higher In concentrations. 216 refs.

Olson, D.A.

1990-11-01T23:59:59.000Z

309

Nanoporosity induced by ion implantation in deposited amorphous Ge thin films  

SciTech Connect

The formation of a nano-porous structure in amorphous Ge thin film (sputter-deposited on SiO{sub 2}) during ion irradiation at room temperature with 300 keV Ge{sup +} has been observed. The porous film showed a sponge-like structure substantially different from the columnar structure reported for ion implanted bulk Ge. The voids size and structure resulted to be strongly affected by the material preparation, while the volume expansion turned out to be determined only by the nuclear deposition energy. In SiGe alloys, the swelling occurs only if the Ge concentration is above 90%. These findings rely on peculiar characteristics related to the mechanism of voids nucleation and growth, but they are crucial for future applications of active nanostructured layers such as low cost chemical and biochemical sensing devices or electrodes in batteries.

Romano, L.; Impellizzeri, G.; Ruffino, F.; Miritello, M.; Grimaldi, M. G. [IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Bosco, L. [Scuola Superiore di Catania, Via Valdisavoia 9, I-95123 Catania (Italy)

2012-06-01T23:59:59.000Z

310

Near-infrared photodetector consisting of J-aggregating cyanine dye and metal oxide thin films  

E-Print Network (OSTI)

We demonstrate a near-infrared photodetector that consists of a thin film of the J-aggregating cyanine dye, U3, and transparent metal-oxide charge transport layers. The high absorption coefficient of the U3 film, combined ...

Osedach, Timothy P.

311

Electrical and optical properties of polycrystalline Ag-doped CdS thin films  

Science Journals Connector (OSTI)

CdS and CdS:Ag thin films were prepared using the spray pyrolysis technique. The prepared films were deposited on glass substrate kept at a temperature of (420±10) °C. The optical and electrical properties hav...

M. A. Khalid; H. A. Jassem

1993-03-01T23:59:59.000Z

312

Strain engineered barium strontium titanate for tunable thin film resonators H. Khassaf,1  

E-Print Network (OSTI)

Strain engineered barium strontium titanate for tunable thin film resonators H. Khassaf,1 N of epitaxial (001) barium strontium titanate (BST) films are computed as functions of composition, misfit

Alpay, S. Pamir

313

Solid-state dewetting of continuous and patterned single crystal Ni thin films  

E-Print Network (OSTI)

Solid-state dewetting of thin films is a process through which continuous solid films agglomerate to form islands. This process is driven by capillary forces, often occurring via surface self-diffusion. Solid-state dewetting ...

Ye, Jongpil

2011-01-01T23:59:59.000Z

314

Effects of diffusion on lubricant distribution under flying headon thin-film disks  

Science Journals Connector (OSTI)

Lubricants on thin-film disks have large effects on head–disk interface characteristics. They reduce head and disk wear while thick lubricant film increases friction ... in many cases. Lubricant depletion due to

K. Yanagisawa; Y. Kawakubo; M. Yoshino

2005-01-01T23:59:59.000Z

315

400V Class Resistive Fault Current Limiter using YBCO Thin Films  

Science Journals Connector (OSTI)

A resistive fault current limiter with 410 Vrms x 56 Arms was realized by connecting six current limiting elements in series. An element was...3...single crystal and a metal film on AIN. The YBCO thin film was co...

Yuki Kudo; Hiroshi Kubota; Mutsuki Yamazaki…

2000-01-01T23:59:59.000Z

316

Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer  

E-Print Network (OSTI)

Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric current gain obtained...

Lu, Tianlin

2012-07-16T23:59:59.000Z

317

Structural, optical and photocatalytic properties of ZnO thin films and  

E-Print Network (OSTI)

emitting diodes, gas sensors and transparent conducting thin films for solar cells. In this work, Zn an electronic furnace. Fig. 1. Grain size (black) and RMS variations (blue) of 1-6 layered ZnO films vs

318

Low Cost Fabrication of Thin-Film Ceramic Membranes for Nonshrinking...  

NLE Websites -- All DOE Office Websites (Extended Search)

Low Cost Fabrication of Thin-Film Ceramic Membranes for Nonshrinking Substrates Lawrence Berkeley National Laboratory Contact LBL About This Technology Technology Marketing...

319

Emission-angle-dependent photoluminescence of rubrene thin films on silver  

Science Journals Connector (OSTI)

Rubrene layers with thickness comparable to a visible light wavelength on silver thin film exhibit anomalous photoluminescence (PL) spectra that depend strongly on emission angle. The...

Wakamatsu, Takashi

2014-01-01T23:59:59.000Z

320

Technological assessment of light-trapping technology for thin-film Si solar cell.  

E-Print Network (OSTI)

??The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was… (more)

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Studies of Block Copolymer Thin Films and Mixtures with an Ionic Liquid  

E-Print Network (OSTI)

identification of structure and domain size in block copolymer thin films using RSoXS enables a quantitative comparison of the bulk

Virgili, Justin

2009-01-01T23:59:59.000Z

322

E-Print Network 3.0 - as2s3 thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

51 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

323

E-Print Network 3.0 - aggase2 thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

42 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

324

E-Print Network 3.0 - ag-in-se thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

36 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

325

E-Print Network 3.0 - alendronate-hydroxyapatite thin films Sample...  

NLE Websites -- All DOE Office Websites (Extended Search)

35 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

326

E-Print Network 3.0 - almgb14 thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

38 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

327

E-Print Network 3.0 - antibacterial thin films Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

78 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

328

E-Print Network 3.0 - abrasion-resistant thin films Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

73 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

329

E-Print Network 3.0 - al-cu-fe thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

52 KO UNIVERSITY Math-Science Seminar Summary: Technical University) Title: Optical and Electrochromic Properties of Sol-Gel Made Thin Films Date and Time... technologies. The...

330

Using Localized Plasmon Resonances to Enhance Absorption Efficiency in Thin-film Organic Solar Cells  

Science Journals Connector (OSTI)

We propose the use of localized surface plasmon modes excited by square metallic gratings to enhance the optical absorption of thin-film organic solar cells. Broadband absorption...

Le, Khai Q; Abass, Aimi; Maes, Bjorn; Bienstman, Peter; Alu, Andrea

331

E-Print Network 3.0 - active thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Western Ontario a JOINT presentation of the Summary: and conducting thin films for optoelectronic applications from carbon nanotubes and graphene" ABSTRACT: Low... . The interest...

332

Design, fabrication and optical characterization of photonic crystal assisted thin film monocrystalline-silicon solar cells  

Science Journals Connector (OSTI)

In this paper, we present the integration of an absorbing photonic crystal within a monocrystalline silicon thin film photovoltaic stack fabricated without epitaxy. Finite difference...

Meng, Xianqin; Depauw, Valérie; Gomard, Guillaume; El Daif, Ounsi; Trompoukis, Christos; Drouard, Emmanuel; Jamois, Cécile; Fave, Alain; Dross, Frédéric; Gordon, Ivan; Seassal, Christian

2012-01-01T23:59:59.000Z

333

Electrostatic layer-by-layer assembly of hybrid thin films using polyelectrolytes and inorganic nanoparticles.  

E-Print Network (OSTI)

??Polymer/inorganic nanoparticle hybrid thin films, primarily composed of functional inorganic nanoparticles, are of great interest to researchers because of their interesting electronic, photonic, and optical… (more)

Peng, Chunqing

2011-01-01T23:59:59.000Z

334

Robust Thin-Film Generator Based on Segmented Contact-Electrification for Harvesting Wind Energy  

Science Journals Connector (OSTI)

Robust Thin-Film Generator Based on Segmented Contact-Electrification for Harvesting Wind Energy ... energies in a wide range of forms. ...

Xian Song Meng; Guang Zhu; Zhong Lin Wang

2014-05-13T23:59:59.000Z

335

AN INVESTIGATION OF THE FLUID DYNAMICS ASPECTS OF THIN LIQUID FILM PROTECTION  

E-Print Network (OSTI)

a conservative "design window" for film detachment. Initial observations of film flow around cy- lindricalAN INVESTIGATION OF THE FLUID DYNAMICS ASPECTS OF THIN LIQUID FILM PROTECTION SCHEMES FOR INERTIAL liquid film wall protection systems have been conducted in support of the ARIES-IFE study. Both

California at San Diego, University of

336

Silicon-integrated thin-film structure for electro-optic applications  

DOE Patents (OSTI)

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

McKee, Rodney A. (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

337

Molecular doping for control of gate bias stress in organic thin film transistors  

SciTech Connect

The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface.

Hein, Moritz P., E-mail: hein@iapp.de; Lüssem, Björn; Jankowski, Jens; Tietze, Max L.; Riede, Moritz K. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany)] [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany); Zakhidov, Alexander A. [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)] [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany); Leo, Karl [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany) [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany); Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)

2014-01-06T23:59:59.000Z

338

Overview and Challenges of Thin Film Solar Electric Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

and Challenges of Thin and Challenges of Thin Film Solar Electric Technologies H.S. Ullal Presented at the World Renewable Energy Congress X and Exhibition 2008 Glasgow, Scotland, United Kingdom July 19-25, 2008 Conference Paper NREL/CP-520-43355 December 2008 NOTICE The submitted manuscript has been offered by an employee of the Alliance for Sustainable Energy, LLC (ASE), a contractor of the US Government under Contract No. DE-AC36-08-GO28308. Accordingly, the US Government and ASE retain a nonexclusive royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for US Government purposes. This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any

339

Thin film solar cell including a spatially modulated intrinsic layer  

DOE Patents (OSTI)

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

1989-03-28T23:59:59.000Z

340

Thorough Characterization of Sputtered CuO Thin Films Used as Conversion Material Electrodes for Lithium Batteries  

Science Journals Connector (OSTI)

CuO is often considered as a p-type semiconductor and, due to its properties, is useful for many applications such as transistors,(1) light emitting diodes(2) or for solar cells and electrochromic devices. ... The influence of various parameters such as oxygen flow rate, substrate temperature, substrate-target distance, total pressure and target orientation (horizontal or tilted) was investigated with the aim to tailor the film properties giving the best electrochemical performances. ... Depth-profiling XPS analyses showed that the reduction processes spread from the thin film surface to the current collector, but that the oxidation starts at the surface of the current collector. ...

Brigitte Pecquenard; Frédéric Le Cras; Delphine Poinot; Olivier Sicardy; Jean-Pierre Manaud

2014-02-12T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Growth direction of oblique angle electron beam deposited silicon monoxide thin films identified by optical second-harmonic generation  

SciTech Connect

Oblique angle deposited (OAD) silicon monoxide (SiO) thin films forming tilted columnar structures have been characterized by second-harmonic generation. It was found that OAD SiO leads to a rotationally anisotropic second-harmonic response, depending on the optical angle of incidence. A model for the observed dependence of the second-harmonic signal on optical angle of incidence allows extraction of the growth direction of OAD films. The optically determined growth directions show convincing agreement with cross-sectional scanning electron microscopy images. In addition to a powerful characterization tool, these results demonstrate the possibilities for designing nonlinear optical devices through SiO OAD.

Vejling Andersen, Søren; Lund Trolle, Mads; Pedersen, Kjeld [Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, DK-9220 Aalborg Øst (Denmark)] [Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, DK-9220 Aalborg Øst (Denmark)

2013-12-02T23:59:59.000Z

342

Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint  

SciTech Connect

We report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. In CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.

Ullal, H. S.; von Roedern, B.

2007-09-01T23:59:59.000Z

343

The development of potassium tantalate niobate thin films for satellite-based pyroelectric detectors  

SciTech Connect

Potassium tantalate niobate (KTN) pyroelectric detectors are expected to provide detectivities, of 3.7 x 10{sup 11} cmHz {sup {1/2}}W{sup {minus}1} for satellite-based infrared detection at 90 K. The background limited detectivity for a room-temperature thermal detector is 1.8 x 10{sup 10} cmHz{sup {1/2}}W{sup {minus}1}. KTN is a unique ferroelectric for this application because of the ability to tailor the temperature of its pyroelectric response by adjusting its ratio of tantalum to niobium. The ability to fabricate high quality KTN thin films on Si-based substrates is crucial to the development of KTN pyroelectric detectors. Si{sub x}N{sub y} membranes created on the Si substrate will provide the weak thermal link necessary to reach background limited detectivities. The device dimensions obtainable by thin film processing are expected to increase the ferroelectric response by 20 times over bulk fabricated KTN detectors. In addition, microfabrication techniques allow for easier array development. This is the first reported attempt at growth of KTN films on Si-based substrates. Pure phase perovskite films were grown by pulsed laser deposition on SrRuO{sub 3}/Pt/Ti/Si{sub x}N{sub y}/Si and SrRuO{sub 3}/Si{sub x}N{sub y}/Si structures; room temperature dielectric permittivities for the KTN films were 290 and 2.5, respectively. The dielectric permittivity for bulk grown, single crystal KTN is {approximately}380. In addition to depressed dielectric permittivities, no ferroelectric hysteresis was found between 80 and 300 K for either structure. RBS, AES, TEM and multi-frequency dielectric measurements were used to investigate the origin of this apparent lack of ferroelectricity. Other issues addressed by this dissertation include: the role of oxygen and target density during pulsed laser deposition of KTN thin films; the use of YBCO, LSC and Pt as direct contact bottom electrodes to the KTN films, and the adhesion of the bottom electrode layers to Si{sub x}N{sub y}/Si.

Cherry, H.B.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley National Lab., CA (United States)

1997-05-01T23:59:59.000Z

344

Method of lift-off patterning thin films in situ employing phase change resists  

DOE Patents (OSTI)

Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas. The condensed solid film is heated selectively with a patterned stamp to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film. An organic semiconductor film is coated on the patterned resist film and the patterned resist film is heated to cause it to sublime away and to lift off because of the phase change.

Bahlke, Matthias Erhard; Baldo, Marc A; Mendoza, Hiroshi Antonio

2014-09-23T23:59:59.000Z

345

Critical lines of magnetic semiconductor thin films: Experiment  

Science Journals Connector (OSTI)

The irreversibilities between the field-cooled and zero-field-cooled dc magnetization were used to determine the field and composition dependence of the spin-glass freezing temperature in CdCr2-2x In2x Se4 thin films. The magnetic ordering was confirmed by the temperature dependence of induced magnetization M and unidirectional magnetic anisotropy field Han determined from ferromagnetic resonance data (4.2–120 K). The experimentally determined H-T phase diagram shows two instability lines: the Gabay-Toulouse-type (GT line) and the Almeida-Thouless-type (AT line) for thin films of CdCr2 Se4 :In with reentrant transition and the AT line for CdCr2-2x In2x Se4 in the spin-glass state. The AT and GT lines obey the relation ?=[(n+1)(n+2)/8]1/3 (heff )2/3 and ?=[(n2 +4n+2)/(4(n+2)2 )] (heff )2 , respectively, for the normalized effective field heff =ha +hm . The first term in heff stands for the external magnetic field, while the second is related to the internal field of the infinite ferromagnetic network (long-range ordering). The value of hm determined from the H-T phase diagram was found to be dependent on indium concentration.

M. Lubecka; L. J. Maksymowicz; R. Szymczak; W. Powroz-acutenik

1997-03-01T23:59:59.000Z

346

Deposition of device quality low H content, amorphous silicon films  

DOE Patents (OSTI)

A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.

Mahan, A.H.; Carapella, J.C.; Gallagher, A.C.

1995-03-14T23:59:59.000Z

347

Enhancement of photoluminescence due to erbium-doped in CdS thin films  

Science Journals Connector (OSTI)

Cadmium sulfide (CdS) thin films were synthesized by chemical bath ... on glass substrates at 80 °C. The CdS thin films were doped with erbium (Er3+) during the growth process by adding aqueous solutions of Er(NO

O. Zelaya-Angel; S. A. Tomás; P. Rodríguez…

2012-01-01T23:59:59.000Z

348

EPMA Instructions for Thin Film Samples General guidelines to reading computer related commands  

E-Print Network (OSTI)

EPMA Instructions for Thin Film Samples General guidelines to reading computer related commands: `Single quote' = menu item, window, or icon "Double quote" = something you type = button you your sample, thin film up, on the dot of epoxy 4. Repeat until all samples are on the puck 5. Flip your

349

Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell  

E-Print Network (OSTI)

Configuration Optimization of a Nanosphere Array on Top of a Thin Film Solar Cell J. Grandidier on top of a solar cell can enhance light absorption and therefore increase its efficiency. Freely photocurrent of the solar cell. On a typical thin film amorphous silicon solar cell, a parametric analysis

Atwater, Harry

350

The effect of stress on the dielectric properties of barium strontium titanate thin films  

E-Print Network (OSTI)

The effect of stress on the dielectric properties of barium strontium titanate thin films T. M Barium strontium titanate thin films are being developed as capacitors in dynamic random access memories to their large permittivities, barium strontium titan- ate BST bulk ceramics have long been used to make high

Suo, Zhigang

351

High tunability barium strontium titanate thin films for rf circuit applications  

E-Print Network (OSTI)

High tunability barium strontium titanate thin films for rf circuit applications N. K. Pervez,a) P) Large variations in the permittivity of rf magnetron sputtered thin-film barium strontium titanate have/cm. © 2004 American Institute of Physics. [DOI: 10.1063/1.1818724] Barium strontium titanate (BST) is a solid

York, Robert A.

352

Optimization of High Tunability Barium Strontium Titanate Thin Films Grown by RF Magnetron  

E-Print Network (OSTI)

Optimization of High Tunability Barium Strontium Titanate Thin Films Grown by RF Magnetron Abstract-- Barium strontium titanate is a solid solution perovskite with a field-dependent permittivity.7 MV/cm. I. INTRODUCTION In recent years there has been much interest in thin-film barium strontium

York, Robert A.

353

Discrete Barium Strontium Titanate (BST) Thin-Film Interdigital Varactors on Alumina: Design, Fabrication, Characterization, and  

E-Print Network (OSTI)

Discrete Barium Strontium Titanate (BST) Thin-Film Interdigital Varactors on Alumina: Design, Raleigh, NC-27695-7914, USA. Email:jayeshnath@ieee.org Abstract -- Discrete Barium Strontium Titanate (BST, capacitors, BST, ferroelectric, thin-film, barium strontium titanate, bandpass filter, IP3, ACPR, temperature

354

Self-similar solutions for a fractional thin film equation governing hydraulic fractures  

E-Print Network (OSTI)

Self-similar solutions for a fractional thin film equation governing hydraulic fractures C. Imbert equation governing hydraulic fractures are constructed. One of the boundary con- ditions, which accounts, 35R11, 35C06 Keywords: Hydraulic fractures, higher order equation, thin films, fractional Laplacian

Boyer, Edmond

355

STRAIN SENSING WITH PIEZOELECTRIC ZINC OXIDE THIN FILMS FOR VIBRATION SUPPRESSION IN HARD DISK DRIVES  

E-Print Network (OSTI)

was successfully obtained while the suspension was flying on a disk as in normal drive operation. PreliminarySTRAIN SENSING WITH PIEZOELECTRIC ZINC OXIDE THIN FILMS FOR VIBRATION SUPPRESSION IN HARD DISK This paper describes the integration of thin film ZnO strain sensors onto hard disk drive suspensions

Horowitz, Roberto

356

Rubbery Graft Copolymer Electrolytes for Solid-State, Thin-Film Lithium Batteries  

E-Print Network (OSTI)

Rubbery Graft Copolymer Electrolytes for Solid-State, Thin-Film Lithium Batteries Patrick E. Trapa to be stable over a wide temperature range and voltage window. Solid-state, thin-film batteries comprised triflate-doped POEM-g-PDMS, which exhibited solid-like mechanical behavior, were nearly identical to those

Sadoway, Donald Robert

357

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network (OSTI)

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

358

Nano-photonic Light Trapping In Thin Film Solar Dennis M. Callahan Jr.  

E-Print Network (OSTI)

Nano-photonic Light Trapping In Thin Film Solar Cells Thesis by Dennis M. Callahan Jr. In Partial. Jeremy Munday for helping me get started on the thin-film GaAs project and for all the time we spent to thank Dr. Jonathan Grandidier for working closely with me for a couple years on the nano sphere solar

Winfree, Erik

359

Bi-Sr-Ca-Cu-O thin films grown by flash evaporation and pulsed laser deposition  

E-Print Network (OSTI)

. Thin films were grown by flash evaporation at Texas A&M University, and by pulsed laser deposition (PLD) at the University of Wollongong, Australia. The latter of these techniques is widely used for growing thin films of various compounds. Single...

Ganapathy Subramanian, Santhana

2004-09-30T23:59:59.000Z

360

Measuring the fracture toughness of ultra-thin films with application to AlTa coatings  

E-Print Network (OSTI)

1 Measuring the fracture toughness of ultra-thin films with application to AlTa coatings Yong Xiang Abstract An experimental technique is presented for measuring the fracture toughness of brittle thin films with a focused ion beam and the membranes are pressurized until rupture. The fracture stress of the membrane

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Carbon nanotube thin films with ordered structures Chunsheng Du,a  

E-Print Network (OSTI)

Carbon nanotube thin films with ordered structures Chunsheng Du,a Jeff Yehb and Ning Pan*a Received December 2004 DOI: 10.1039/b414682d Carbon nanotube thin films with ordered structures have been developed properties, carbon nanotubes have aroused a great deal of research interest, and a wider range of potential

Pan, Ning

362

X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films  

E-Print Network (OSTI)

X-ray Absorption Spectroscopy of Transition Metal-Magnesium Hydride Thin Films T. J. Richardsona@lbl.gov Abstract Mixed metal thin films containing magnesium and a first-row transition element exhibit very large and coordination of the magnesium and transition metal atoms during hydrogen absorption were studied using dynamic

363

Synthesis and Screening of Thin Films in the CeCl3-CeBr3 System...  

NLE Websites -- All DOE Office Websites (Extended Search)

Screening of Thin Films in the CeCl3-CeBr3 System for Scintillator Applications. Synthesis and Screening of Thin Films in the CeCl3-CeBr3 System for Scintillator Applications....

364

Thin Film Coolers for Localized Temperature Control in Optoelectronic Integrated Circuits Yan Zhang. James Cliristofferson, Danoosh Vaslkiee. Phuong Nguyen. Ali Shakouri  

E-Print Network (OSTI)

Thin Film Coolers for Localized Temperature Control in Optoelectronic Integrated Circuits Yan Zhang-sensitive properties of optoelectronic are constraints for high frequency high power operation. and for high level, optoelectronic. transient, integration Introduction 1. Thermal Issue in Optoelectronic Devices The on

365

Effects of Cu Diffusion from ZnTe:Cu/Ti Contacts on Carrier Lifetime of CdS/CdTe Thin Film Solar Cells: Preprint  

SciTech Connect

We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime in the CdTe layer is affected by Cu diffusion from the contact.

Gessert, T. A.; Metzger, W. K.; Asher, S. E.; Young, M. R.; Johnston, S.; Dhere, R. G.; Duda, A.

2008-05-01T23:59:59.000Z

366

Temperature Dependence of Sputtered Conductive Carbon Thin Films Bull. Korean Chem. Soc. 2011, Vol. 32, No. 3 939 DOI 10.5012/bkcs.2011.32.3.939  

E-Print Network (OSTI)

°C to 700 °C in increments of 100 °C using a rapid thermal annealing method by vacuum furnace in the electronic devices such as organic thin film transistor (OTFT), dye-sensitized solar cell (DSSC), and field by a vacuum furnace in vacuum ambient, and the effects of annealing temperature on struc- tural, tribological

Boo, Jin-Hyo

367

Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication  

SciTech Connect

The effect that direct current (dc) substrate bias has on radio frequency-sputter-deposited amorphous silicon (a-Si) films has been investigated. The substrate bias produces a denser a-Si film with fewer defects compared to unbiased films. The reduced number of defects results in a higher resistivity because defect-mediated conduction paths are reduced. Thin film transistors (TFTs) that were completely sputter deposited were fabricated and characterized. The TFT with the biased a-Si film showed lower leakage (off-state) current, higher on/off current ratio, and higher transconductance (field effect mobility) than the TFT with the unbiased a-Si film.

Jun, Seung-Ik; Rack, Philip D.; McKnight, Timothy E.; Melechko, Anatoli V.; Simpson, Michael L. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996-2200 (United States); Molecular Scale Engineering and Nanoscale Technologies Research Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

2005-09-26T23:59:59.000Z

368

Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications  

Science Journals Connector (OSTI)

This paper describes a systematic approach to analyze the simultaneous impact of various reactant plasma parameters of remote plasma enhanced ALD (PEALD) on the ZnO thin film properties. Particular emphasis is placed on the film stoichiometry which affects the electrical properties of the thin film. Design of Experiment (DOE) is used to study the impact of the oxygen plasma parameters such as the RF power, pressure and plasma time to realize semiconductor quality of ZnO thin film. Based on the optimized plasma condition, staggered bottom-gate \\{TFTs\\} were fabricated and its electrical characteristics were measured.

S.M. Sultan; O.D. Clark; T.B. Masaud; Q. Fang; R. Gunn; M.M.A. Hakim; K. Sun; P. Ashburn; H.M.H. Chong

2012-01-01T23:59:59.000Z

369

Reactions of Disilane on Cu(111): Direct Observation of Competitive Dissociation, Disproportionation, and Thin Film Growth Processes  

Science Journals Connector (OSTI)

Reactions of Disilane on Cu(111): Direct Observation of Competitive Dissociation, Disproportionation, and Thin Film Growth Processes ...

Shrikant P. Lohokare; Benjamin C. Wiegand; Ralph G. Nuzzo

1995-10-01T23:59:59.000Z

370

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa  

E-Print Network (OSTI)

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa , Alessio in the fabrication of high efficiency CdTe/CdS thin film solar cells. Usually, it is done first by etching the Cd: Back Contact, CdTe, Thin Film 1 INTRODUCTION The back contact in the CdTe/CdS thin film solar cell

Romeo, Alessandro

371

Comparison of Ag and SiO2 Nanoparticles for Light Trapping Applications in Silicon Thin Film Solar Cells  

Science Journals Connector (OSTI)

Comparison of Ag and SiO2 Nanoparticles for Light Trapping Applications in Silicon Thin Film Solar Cells ... † Department

Martin Theuring; Peng Hui Wang; Martin Vehse; Volker Steenhoff; Karsten von Maydell; Carsten Agert; Alexandre G. Brolo

2014-09-10T23:59:59.000Z

372

Microfluidic pumps employing surface acoustic waves generated in ZnO thin films  

SciTech Connect

ZnO thin film based surface acoustic wave (SAW) devices have been utilized to fabricate microfluidic pumps. The SAW devices were fabricated on nanocrystalline ZnO piezoelectric thin films deposited on Si substrates using rf magnetron sputtering and use a Sezawa wave mode for effective droplet motion. The as-deposited ZnO surface is hydrophilic, with a water contact angle of {approx}75 deg., which prevents droplet pumping. Therefore, the ZnO surface was coated using a self-assembled monolayer of octadecyltrichlorosilane which forms a hydrophobic surface with a water contact angle of {approx}110 deg. Liquid droplets between 0.5 and 1 {mu}l in volume were successfully pumped on the hydrophobic ZnO surface at velocities up to 1 cm s{sup -1}. Under acoustic pressure, the water droplet on an hydrophilic surface becomes deformed, and the asymmetry in the contact angle at the trailing and leading edges allow the force acting upon the droplet to be calculated. These forces, which increase with input voltage above a threshold level, are found to be in the range of {approx}100 {mu}N. A pulsed rf signal has also been used to demonstrate precision manipulation of the liquid droplets. Furthermore, a SAW device structure is demonstrated in which the ZnO piezoelectric only exists under the input and output transducers. This structure still permits pumping, while avoiding direct contact between the piezoelectric material and the fluid. This is of particular importance for biological laboratory-on-a-chip applications.

Du, X. Y.; Flewitt, A. J.; Milne, W. I. [Electrical Engineering Division, Department of Engineering, University of Cambridge, JJ Thomson Ave., Cambridge CB3 0FA (United Kingdom); Fu, Y. Q. [Electrical Engineering Division, Department of Engineering, University of Cambridge, JJ Thomson Ave., Cambridge CB3 0FA (United Kingdom); Department of Mechanical Engineering, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Luo, J. K. [Electrical Engineering Division, Department of Engineering, University of Cambridge, JJ Thomson Ave., Cambridge CB3 0FA (United Kingdom); Centre for Material Research and Innovation, University of Bolton, Deane Road, Bolton BL3 5AB (United Kingdom)

2009-01-15T23:59:59.000Z

373

Influence of film thickness and In-doping on physical properties of CdS thin films  

Science Journals Connector (OSTI)

Abstract Polycrystalline CdS thin films were deposited on glass substrates by close spaced sublimation technique. Samples of various thicknesses, ranging from 250 to 940 nm were obtained. The optical and electrical properties of pure CdS thin films were studied as a function of film thickness. The resistivity of as-deposited CdS films was in the order of 106–108 ? cm, depending upon the film thickness. In the high temperature region, carriers are transported over the grain boundaries by thermionic emission. Resistivity was reduced to the order of 10?2–101 ? cm by the thermally diffusion of indium into CdS films, without changing the type of carriers. The annealing temperature dependence of structural, optical and electrical properties of In-doped CdS films showed that the samples annealed at 350 °C and 400 °C exhibited better results.

Sajid Butt; Nazar Abbas Shah; Adnan Nazir; Zulfiqar Ali; Asghri Maqsood

2014-01-01T23:59:59.000Z

374

Enhancement of optical absorption in thin-film organic solar cells through the excitation of plasmonic modes in metallic gratings  

E-Print Network (OSTI)

Enhancement of optical absorption in thin-film organic solar cells through the excitation 2010 We theoretically investigate the enhancement of optical absorption in thin-film organic solar.1063/1.3377791 Thin-film organic solar cells OSCs are a promising candidate for low-cost energy conversion.1­6 However

Veronis, Georgios

375

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network (OSTI)

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells Company has had a conti- nuous effort on thin film solar cells for the past four and a half years

Paris-Sud XI, Université de

376

Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High efficiency and junction property  

E-Print Network (OSTI)

Hole-conductor-free perovskite organic lead iodide heterojunction thin-film solar cells: High-conductor-free organic lead iodide thin film solar cells have been fabricated with a sequential deposition method are comparable to that of the high-efficiency thin-film solar cells. VC 2014 AIP Publishing LLC. [http

Wang, Wei Hua

377

GISAXS view of induced morphological changes in nanostructured CeVO4 thin films  

Science Journals Connector (OSTI)

Nanostructured CeVO4 films, designed for applications in electrochemical cells and electrochromic devices, were obtained on glass substrates by the sol-gel process. An analysis of morphological modifications in these films, induced by ultrasonication, ...

Magdy Lu?i? Lav?evi?; Aleksandra Turkovi?; Pavo Dub?ek; Zorica Crnjak Orel; Bojan Orel; Sigrid Bernstorff

2011-01-01T23:59:59.000Z

378

Design consideration of micro thin film solid-oxide fuel cells  

Science Journals Connector (OSTI)

Miniaturized planar solid-oxide fuel cells (SOFCs) and stacks can be fabricated by thin film deposition and micromachining. Serious thermal stresses, originating in fabrication and during operation, cause thermal–mechanical instability of the constituent thin films. In this paper, the effect of thin film geometry on thermal stress and mechanical stability is evaluated to optimize the structure of a thin film. A novel design of thin circular electrolyte films for SOFCs is presented by using corrugated structures, with which small thermal stresses and a broad design range of structure parameters can be obtained. Thermal transfer analysis shows that heat loss by solid conduction is serious in thin films with a small radius. But thermal convection and radiation dominate heat loss in large thin films with a radius of several millimetres. Scale-dependent thermal characteristics show the importance of film size and packaging in optimization of thermal isolation for micro SOFCs. A novel flip-flop stack configuration for micro SOFCs is presented. This configuration allows multiple cells to share one reaction chamber, helps to obtain uniform flow fields, and simplifies the flow field network for micro fuel cell stacks.

Yanghua Tang; Kevin Stanley; Jonathan Wu; Dave Ghosh; Jiujun Zhang

2005-01-01T23:59:59.000Z

379

Finite-element analysis of the deformation of thin Mylar films due to measurement forces.  

SciTech Connect

Significant deformation of thin films occurs when measuring thickness by mechanical means. This source of measurement error can lead to underestimating film thickness if proper corrections are not made. Analytical solutions exist for Hertzian contact deformation, but these solutions assume relatively large geometries. If the film being measured is thin, the analytical Hertzian assumptions are not appropriate. ANSYS is used to model the contact deformation of a 48 gauge Mylar film under bearing load, supported by a stiffer material. Simulation results are presented and compared to other correction estimates. Ideal, semi-infinite, and constrained properties of the film and the measurement tools are considered.

Baker, Michael Sean; Robinson, Alex Lockwood; Tran, Hy D.

2012-01-01T23:59:59.000Z

380

Soft-Chemistry–Based Routes to Epitaxial ?-Quartz Thin Films with Tunable Textures  

Science Journals Connector (OSTI)

...the outer surface (36...migrate to the surface and remain...illustrated by the parabolic dependence...expelled to the surface of the film...macrostructure of a large area in macroporous quartz thin film with...quartz films after 5 hours at...relax internal stresses within the...full width at half-maximum...

A. Carretero-Genevrier; M. Gich; L. Picas; J. Gazquez; G. L. Drisko; C. Boissiere; D. Grosso; J. Rodriguez-Carvajal; C. Sanchez

2013-05-17T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Phase-field simulation of strain-induced domain switching in magnetic thin films  

E-Print Network (OSTI)

Phase-field simulation of strain-induced domain switching in magnetic thin films Jia-Mian Hu, G of the Bloch point in a magnetic film with strong uniaxial magnetic anisotropy Low Temp. Phys. 37, 690 (2011) Evolution of magnetic bubble domains in manganite films Appl. Phys. Lett. 99, 042503 (2011) 360° domain wall

Chen, Long-Qing

382

Evaluation of unencapsulated ceramic monolithic and MOS thin-film capacitors (25 to 300/sup 0/C)  

SciTech Connect

Several commercial monolithic ceramic and thin-film MOS chip capacitors were evaluated for use in high temperature (300/sup 0/C) geothermal instrumentation. Characteristics of the commonly used dielectric materials (NPO, X7R, BX) and temperature dependence of the insulation resistance are briefly discussed. Some ceramic capacitors with NPO dielectric materials had insulation resistances above 10 megohms at 300/sup 0/C and less than 2% change in capacitance from 25/sup 0/C to 300/sup 0/C, while the X7R and BX dielectric materials exhibited insulation resistances below 10 megohm and changes in capacitance greater then 50%. The thin-film capacitors showed good stability at 300/sup 0/C. However, during aging, bonds and bond pads presented a problem causing intermittently open circuits for some of the devices.

Nance, W.R.

1982-01-01T23:59:59.000Z

383

Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance  

SciTech Connect

We report on CdS/CdTe photovoltaic devices that contain a thin Ta2O5 film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta2O5 films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta2O5 interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta2O5 interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.

Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor

2012-05-05T23:59:59.000Z

384

Tailoring the coercivity in ferromagnetic ZnO thin films by 3d and 4f elements codoping  

SciTech Connect

Cluster free, Co (3d) and Eu (4f) doped ZnO thin films were prepared using ion implantation technique accompanied by post annealing treatments. Compared with the mono-doped ZnO thin films, the samples codoped with Co and Eu exhibit a stronger magnetization with a giant coercivity of 1200?Oe at ambient temperature. This was further verified through x-ray magnetic circular dichroism analysis, revealing the exchange interaction between the Co 3d electrons and the localized carriers induced by Eu{sup 3+} ions codoping. The insight gained with modulating coercivity in magnetic oxides opens up an avenue for applications requiring non-volatility in spintronic devices.

Lee, J. J.; Xing, G. Z., E-mail: guozhong.xing@unsw.edu.au; Yi, J. B.; Li, S. [School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052 (Australia)] [School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052 (Australia); Chen, T. [Department of Physics, The Chinese University of Hong Kong, Shatin (Hong Kong)] [Department of Physics, The Chinese University of Hong Kong, Shatin (Hong Kong); Ionescu, M. [Australian Nuclear Science and Technology Organization, Sydney, New South Wales 2234 (Australia)] [Australian Nuclear Science and Technology Organization, Sydney, New South Wales 2234 (Australia)

2014-01-06T23:59:59.000Z

385

Substitutional incorporation of Sn in compressively strained thin films of heavily-alloyed Ge1 ? xSn  

Science Journals Connector (OSTI)

Short-range-order and long-range-order structures in Ge1 ? xSn x /Ge thin films grown by molecular beam epitaxy (MBE) were investigated by using extended x-ray absorption fine structure (EXAFS) and x-ray diffraction (XRD) techniques, respectively. These materials are of great potential for constructing efficient optoelectronic devices. The EXAFS analysis demonstrates that Sn atoms occupy Ge sites in these thin-film samples with Sn concentration up to 20 at.%. The Ge-Sn bonds expected in the substitutional model were also observed in Raman spectra of these samples. The XRD results show that, in the out-of-plane direction, the lattice constants of the films are distinctly larger than that of the Ge substrates. However, such increased lattice parameters were not observed in the in-plane direction. Our x-ray and Raman results have clearly revealed substitutional incorporation of Sn with high concentration in dislocation-free MBE-grown Ge films of practical-device thickness.

Y L Soo; T S Wu; Y C Chen; Y F Shiu; H J Peng; Y W Tsai; P Y Liao; Y Z Zheng; S L Chang; T S Chan; J F Lee; G E Sterbinsky; H Li; H H Cheng

2014-01-01T23:59:59.000Z

386

Design and optimization of large area thin-film CdTe detector for radiation therapy imaging applications  

SciTech Connect

Purpose: The authors investigate performance of thin-film cadmium telluride (CdTe) in detecting high-energy (6 MV) x rays. The utilization of this material has become technologically feasible only in recent years due to significant development in large area photovoltaic applications. Methods: The CdTe film is combined with a metal plate, facilitating conversion of incoming photons into secondary electrons. The system modeling is based on the Monte Carlo simulations performed to determine the optimized CdTe layer thickness in combination with various converter materials. Results: The authors establish a range of optimal parameters producing the highest DQE due to energy absorption, as well as signal and noise spatial spreading. The authors also analyze the influence of the patient scatter on image formation for a set of detector configurations. The results of absorbed energy simulation are used in device operation modeling to predict the detector output signal. Finally, the authors verify modeling results experimentally for the lowest considered device thickness. Conclusions: The proposed CdTe-based large area thin-film detector has a potential of becoming an efficient low-cost electronic portal imaging device for radiation therapy applications.

Parsai, E. Ishmael; Shvydka, Diana; Kang, Jun [Department of Radiation Oncology, University of Toledo Health Sciences Campus, 3000 Arlington Avenue, Toledo, Ohio 43614 (United States); Department of Radiation Oncology, John Hopkins University, 401 N Broadway, Suite 1440, Baltimore, Maryland 21231 (United States)

2010-08-15T23:59:59.000Z

387

Properties of ferroelectric/ferromagnetic thin film heterostructures  

SciTech Connect

Ferroelectric/ferromagnetic thin film heterostructures, SrBi{sub 2}Ta{sub 2}O{sub 9}/BaFe{sub 12}O{sub 19} (SBT/BaM), were grown on platinum-coated Si substrates using metal-organic decomposition. X-ray diffraction patterns confirmed that the heterostructures contain only SBT and BaM phases. The microwave properties of these heterostructures were studied using a broadband ferromagnetic resonance (FMR) spectrometer from 35 to 60 GHz, which allowed us to determine gyromagnetic ratio and effective anisotropy field. The FMR linewidth is as low as140 Oe at 58 GHz. In addition, measurements of the effective permittivity of the heterostructures were carried out as a function of bias electric field. All heterostructures exhibit hysteretic behavior of the effective permittivity. These properties indicate that such heterostructures have potential for application in dual electric and magnetic field tunable resonators, filters, and phase shifters.

Chen, Daming, E-mail: chendaming1986@gmail.com [Center for Magnetism and Magnetic Nanostructures, University of Colorado Colorado Springs, 1420 Austin Bluffs Pkwy, Colorado Springs, Colorado 80918 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 Sichuan (China); Harward, Ian; Linderman, Katie; Economou, Evangelos; Celinski, Zbigniew [Center for Magnetism and Magnetic Nanostructures, University of Colorado Colorado Springs, 1420 Austin Bluffs Pkwy, Colorado Springs, Colorado 80918 (United States); Nie, Yan [Center for Magnetism and Magnetic Nanostructures, University of Colorado Colorado Springs, 1420 Austin Bluffs Pkwy, Colorado Springs, Colorado 80918 (United States); School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei 430074 (China)

2014-05-07T23:59:59.000Z

388

Manipulating Josephson junctions in thin-films by nearby vortices  

SciTech Connect

It is shown that a vortex trapped in one of the banks of a planar edge-type Josephson junction in a narrow thin-film superconducting strip can change drastically the dependence of the junction critical current on the applied field, I-c(H). When the vortex is placed at certain discrete positions in the strip middle, the pattern I-c(H) has zero at H = 0 instead of the traditional maximum of '0-type' junctions. The number of these positions is equal to the number of vortices trapped at the same location. When the junction-vortex separation exceeds similar to W, the strip width, I-c(H) is no longer sensitive to the vortex presence. The same is true for any separation if the vortex approaches the strip edges. (C) 2014 Elsevier B.V. All rights reserved.

Kogan, V.G.; Mints, R.G.

2014-07-01T23:59:59.000Z

389

Characterization of Field Exposed Thin Film Modules: Preprint  

SciTech Connect

Test arrays of thin film modules have been deployed at the Solar Energy Centre near New Delhi, India since 2002-2003. Performances of these arrays were reported by O.S. Sastry [1]. This paper reports on NREL efforts to support SEC by performing detailed characterization of selected modules from the array. Modules were selected to demonstrate both average and worst case power loss over the 8 years of outdoor exposure. The modules characterized included CdTe, CIS and three different types of a-Si. All but one of the a-Si types were glass-glass construction. None of the modules had edge seals. Detailed results of these tests are presented along with our conclusions about the causes of the power loss for each technology.

Wohlgemuth, J. H.; Sastry, O. S.; Stokes, A.; Singh, Y. K.; Kumar, M.

2012-06-01T23:59:59.000Z

390

Asymmetric Reduction of Gold Nanoparticles into Thermoplasmonic Polydimethylsiloxane Thin Films  

Science Journals Connector (OSTI)

This work extends this range to include fabrication and characterization of AuNP-containing asymmetric thin films and shows important advantages relative to uniformly distributed particles via sub-surface introduction of AuNPs at just one interface of a polymer. ... Using a diffusivity of water in PDMS of approximately 2 × 10–9 m2/s,(32) diffusive penetration of water into a semi-infinite PDMS slab would reach approximately 5 cm after 24 h. ... This increase in thermal response relative to previous aqueous, silica, and PDMS samples appears to result from an increase in nanoparticle density relative to insulating PDMS, insulation of the heated layer by a thicker, adjacent gold-free PDMS, and reduction of radiativity of the PDMS relative to planar substrates. ...

Jeremy R. Dunklin; Gregory T. Forcherio; Keith R. Berry, Jr.; D. Keith Roper

2013-08-09T23:59:59.000Z

391

Generation of mirage effect by heated carbon nanotube thin film  

SciTech Connect

Mirage effect, a common phenomenon in nature, is a naturally occurring optical phenomenon in which lights are bent due to the gradient variation of refraction in the temperature gradient medium. The theoretical analysis of mirage effect generated by heated carbon nanotube thin film is presented both for gas and liquid. Excellent agreement is demonstrated through comparing the theoretical prediction with published experimental results. It is concluded from the theoretical prediction and experimental observation that the mirage effect is more likely to happen in liquid. The phase of deflected optical beam is also discussed and the method for measurement of thermal diffusivity of medium is theoretically verified. Furthermore, a method for measuring the refractive index of gas by detecting optical beam deflection is also presented in this paper.

Tong, L. H. [Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230026 (China); USTC-CityU Joint Advanced Research Centre, Suzhou, Jiangsu 215123 (China); Lim, C. W., E-mail: bccwlim@cityu.edu.hk [USTC-CityU Joint Advanced Research Centre, Suzhou, Jiangsu 215123 (China); Department of Civil and Architectural Engineering, City University of Hong Kong, Kowloon, Hong Kong, People’s Republic of China and City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057 (China); Li, Y. C. [Department of Modern Mechanics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Zhang, Chuanzeng; Quoc Bui, Tinh [Department of Civil Engineering, University of Siegen, Paul-Bonatz-Str. 9-11, D-57076 Siegen (Germany)

2014-06-28T23:59:59.000Z

392

Bioinspired Ceramic Thin Film Processing:? Present Status and Future Perspectives  

Science Journals Connector (OSTI)

23 When considering the preparation of thin films through a chemical route, one should realize that modern chemistry as a major branch of science and industry should be developed to emphasize low consumption of raw materials and energy, low generation of waste, and producer/user friendliness. ... 40,42a,60b The experimental method involves the measurement of surface forces using a surface force apparatus (SFA)61 and atomic force microscopy (AFM),62 which are used for measuring forces between two macroscopic surfaces or between a fine tip and a surface, respectively. ... The result is a hybrid technique combining ease of use and ability to see into cells using optical microscopy with the higher resolution of electron microscopy. ...

Yanfeng Gao; Kunihito Koumoto

2005-07-26T23:59:59.000Z

393

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells  

DOE Patents (OSTI)

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Ramanathan, Kannan V. (Lakewood, CA); Contreras, Miguel A. (Golden, CA); Bhattacharya, Raghu N. (Littleton, CA); Keane, James (Lakewood, CA); Noufi, Rommel (Golden, CA)

1999-01-01T23:59:59.000Z

394

Nanoparticles Stabilize Thin Polymer Films: A Fundamental Study to Understand the Phenomenon  

SciTech Connect

A new understanding of thermodynamics at the nanoscale resulted in a recently discovered first order phase transition that nanoparticles in a polymer film will all segregate to the supporting substrate. This is an unusual phase transition that was predicted using a modeling technique developed at Sandia National Laboratories and required the equivalent of many computational years on one computer. This project is a collaboration between Prof. Michael Mackay's group and Dr. Amalie Frischknecht (Sandia National Laboratories) where experimental observation and theoretical rationalization and prediction are brought together. Other discoveries were that this phase transition could be avoided by changing the nanoparticle properties yielding control of the assembly process at the nanoscale. In fact, the nanoparticles could be made to assemble to the supporting substrate, to the air interface or not assemble at all within a thin polymer film of order 100 nm in thickness. However, when the assembly process is present it is so robust that it is possible to make rough liquid films at the nanoscale due to nanoparticles assembling around three-dimensional objects. From this knowledge we are able to design and manufacture new coatings with particular emphasis on polymer-based solar cells. Careful control of the morphology at the nanoscale is expected to provide more efficient devices since the physics of these systems is dictated at this length scale and assembly of nanoparticles to various interfaces is critical to operation.

Michael E. Mackay

2009-03-04T23:59:59.000Z

395

Spin Coated Plasmonic Nanoparticle Interfaces for Photocurrent Enhancement in Thin Film Si Solar Cells  

E-Print Network (OSTI)

Nanoparticle (NP) arrays of noble metals strongly absorb light in the visible to infrared wavelengths through resonant interactions between the incident electromagnetic field and the metal's free electron plasma. Such plasmonic interfaces enhance light absorption and photocurrent in solar cells. We report a cost effective and scalable room temperature/pressure spin-coating route to fabricate broadband plasmonic interfaces consisting of silver NPs. The NP interface yields photocurrent enhancement (PE) in thin film silicon devices by up to 200% which is significantly greater than previously reported values. For coatings produced from Ag nanoink containing particles with average diameter of 40 nm, an optimal NP surface coverage of 7% was observed. Scanning electron microscopy of interface morphologies revealed that for low surface coverage, particles are well-separated, resulting in broadband PE. At higher surface coverage, formation of particle strings and clusters caused red-shifting of the PE peak and a narro...

Israelowitz, Miriam; Cong, Tao; Sureshkumar, Radhakrishna

2013-01-01T23:59:59.000Z

396

Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability  

SciTech Connect

We fabricated nano-crystalline Si (nc-Si:H) thin-film transistors (TFTs) with a double-metal-gate structure, which showed a high electron-mobility (?{sub FE}) and adjustable threshold voltages (V{sub th}). The nc-Si:H channel and source/drain (S/D) of the multilayered TFT were deposited at 375?°C by inductively coupled plasma chemical vapor deposition. The low grain-boundary defect density of the channel layer is responsible for the high ?{sub FE} of 370 cm{sup 2}/V-s, a steep subthreshold slope of 90?mV/decade, and a low V{sub th} of ?0.64?V. When biased with the double-gate driving mode, the device shows a tunable V{sub th} value extending from ?1?V up to 2.7?V.

Chiou, Uio-Pu; Pan, Fu-Ming, E-mail: fmpan@faculty.nctu.edu.tw [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China)] [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China); Shieh, Jia-Min, E-mail: jmshieh@narlabs.org.tw, E-mail: jmshieh@faculty.nctu.edu.tw [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China) [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China); Yang, Chih-Chao [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China)] [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Huang, Wen-Hsien [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China) [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China); National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Kao, Yo-Tsung [Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China)] [Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China)

2013-11-11T23:59:59.000Z

397

A high-k ferroelectric relaxor terpolymer as a gate dielectric for orgnaic thin film transistors  

SciTech Connect

Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this solution processable terpolymer was used as the gate insulator in bottom gated organic thin-film transistors with a pentacene semiconductor layer. Due to the high dielectric constant of P(VDF-TrFE- CFE), a large capacitive coupling between the gate and channel can be achieved which causes a high charge concentration at the interface of the semiconductor and dielectric layers. In this device, an on/ off ratio of 104 and a low minimum operation gate voltage (5-10 V) were attained

Wu, Shan [Pennsylvania State University; Shao, Ming [ORNL; Burlingame, Quinn [Pennsylvania State University; Chen, Xiangzhong [Penn state university; Lin, Minren [Pennsylvania State University; Xiao, Kai [ORNL; Zhang, Qiming [Pennsylvania State University

2013-01-01T23:59:59.000Z

398

Structural Studies of Al:ZnO Powders and Thin Films | Stanford Synchrotron  

NLE Websites -- All DOE Office Websites (Extended Search)

Structural Studies of Al:ZnO Powders and Thin Films Structural Studies of Al:ZnO Powders and Thin Films Monday, June 18, 2012 - 2:00pm SSRL Main Conference Room 137-322 Dr. Bridget Ingham, Associate Investigator, MacDiarmid Institute for Advanced Materials & Nanotechnology Al-doped ZnO (Al:ZnO) is a promising transparent conducting oxide. We have used complementary synchrotron and laboratory techniques to study the incorporation of Al within the ZnO lattice, and measure its effect on the crystallinity of thin films prepared by sol-gel techniques, with an aim to understand how these properties affect the film conductivity. I will present recent results from Al:ZnO powders and thin films, prepared with varying Al concentrations and calcination temperatures. Solid state 27Al NMR and ex situ X-ray diffraction (XRD) were performed on Al:ZnO

399

Thin Film Encapsulation Methods for Large Area MEMS Packaging  

E-Print Network (OSTI)

penetrated c) Windows in nitride film not clearly visiblea circular window is preferred to minimize film deflection

Mahajerin, Armon

2012-01-01T23:59:59.000Z

400

New frontier in thin film epitaxy and nanostructured materials  

Science Journals Connector (OSTI)

Nanomaterials hold the key to the success of nanotechnology. This review starts with a new paradigm for thin film growth based upon matching of integral multiples of lattice planes across the film-substrate interface. This paradigm of domain matching epitaxy (DME) unifies small as well as large misfit systems utilising the concept of systematic domain variation. By controlling the kinetics of clustering and energetics of interfaces, it is possible to obtain nanoclusters of uniform size and create novel nanostructured materials by design, where relative orientation with respect to matrix can be controlled by DME. In nanostructured materials with unit dimensions 1â??100 nm, science and processing challenges include self-assembly processing, control of interfacial atoms and energetics, quantum confinement issues, nanoscale structure-property correlations. In addition, metastability of interfaces should be controlled for reliability in manufacturing of nanosystems. This paper presents fundamentals of synthesis and processing of nanomaterials, role of interfaces, nanoscale characterisation to establish atomic structure-property correlations and modelling to create novel nanostructured structural, magnetic, photonic and electronic systems with unique and improved properties for next-generation systems with new functionality.

Jagdish Narayan

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

ALD and Pulsed CVD of Ruthenium and Ruthenium Dioxide Thin Films From an Amidinate Precursor  

E-Print Network (OSTI)

Narrow window of O2 exposure (e.g. 0.02~0.04 Torr·s @ 325ºC) to obtain high quality pure Ru filmALD and Pulsed CVD of Ruthenium and Ruthenium Dioxide Thin Films From an Amidinate Precursor Xinwei, China Introduction Experimental ALD with O2 Ru metal film Pulsed CVD with NH3+H2 Ru metal film Pulsed

402

COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces  

NLE Websites -- All DOE Office Websites (Extended Search)

COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces Coherent Bragg rod analyses (COBRA) experiments using synchrotron x-rays at Argonne's Advanced Photon Source (MHATT-CAT and PNC-CAT beamlines) directly revealed the sub-angstrom atomic interaction of epitaxial films with substrates. Information on how atoms in the adjoining layers of the film and substrate rearrange to mimic each other may lead to improvements in semiconductor manufacturing and the development of novel heterostructure materials, such as multilayer ferroelectrics, magnetic nanostructures and thin film superconductors. COBRA electron density map of a Gd2O3 film on a gallium arsenide substrate. The peaks correspond to folded Gd atomic positions parallel to the plane of the substrate.

403

The catalytic reactivity of thin film crystal surfaces: Annual technical progress report  

SciTech Connect

Research is being conducted on Cu/Pd and Pd/Cu thin films. Work has been completed on the following: Work Function Studies on Epitaxial Cu/Pd Bilayer Films; Kinetics of CO and Oxygen Adsorption on Smooth and Sputtered Epitaxial Pd(lll) Films on Mica; A Simple Model for the Auger Electron Spectroscopy Evaluation of Thin Film Layer Growth Systems in Which Substrate-Overgrowth Mixing Occurs. Work in progress includes: AES of the Growth of Pd on (lll)Cu and Cu on (lll)Pd; Catalysis of the CO Oxidation Reaction on Epitaxial Cu/Pd Bilayer Films; Thermal Desorption Spectroscopy of CO from Various Thin Film Cu/Pd Bilayers; LEED Measurements; Kinetics of Adsorption of CO on Various Cu/Pd Bilayers. 7 figs.

Vook, R.W.

1988-02-15T23:59:59.000Z

404

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof  

DOE Patents (OSTI)

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Perkins, John (Boulder, CO); Van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David (Evergreen, CO); Taylor, Matthew (Golden, CO); Neuman, George A. (Holland, MI); Luten, Henry A. (Holland, MI); Forgette, Jeffrey A. (Hudsonville, MI); Anderson, John S. (Holland, MI)

2010-07-13T23:59:59.000Z

405

Scanning electrochemical microscope characterization of thin film combinatorial libraries for fuel cell electrode applications  

Science Journals Connector (OSTI)

Pt–Ru combinatorial libraries of potential fuel cell anode catalysts are formed by sequential sputter deposition through masks onto Si wafers. Scanning electrochemical microscopy (SECM) is employed for characterization of electrocatalytic activity. Aspects of using a scanning electrochemical microscope for characterization of an array of thin film fuel cell electrode materials are discussed. It is shown that in applying SECM to library characterization, careful attention must be paid to thin film annealing, specimen topography and tip degradation in order to realize meaningful results. Results from a Pt–Ru thin film library reveal the most active members near the 50 Pt/50 Ru composition.

M Black; J Cooper; P McGinn

2005-01-01T23:59:59.000Z

406

Highly Transparent, Flexible, and Thermally Stable Superhydrophobic ORMOSIL Aerogel Thin Films  

Science Journals Connector (OSTI)

(9, 22) On the other hand, ORMOSIL aerogel thin films produced in this work are highly transparent, do not need any pre or post surface treatments and can be applied on a variety of substrates including glass, wood, and plastics at ambient conditions with common thin-film deposition methods such as spin, dip, and spray coating. ... (b) Photographs of ORMOSIL aerogel thin films coated on glass substrates. ... This makes it possible to coat superhydrophobic aerogels on many different surfaces other than glass, including wood, wall tile, aluminum slab, cotton cloth, and plastics, which enables fast and easy production of large-scale superhydrophobic coatings. ...

Hulya Budunoglu; Adem Yildirim; Mustafa O. Guler; Mehmet Bayindir

2011-01-12T23:59:59.000Z

407

Sputtered Nickel Oxide Thin Film for Efficient Hole Transport Layer in Polymer-Fullerene Bulk-Heterojunction Organic Solar Cell  

SciTech Connect

Bulk-heterojunction (BHJ) organic photovoltaics (OPV) are very promising thin film renewable energy conversion technologies due to low production cost by high-throughput roll-to-roll manufacturing, an expansive list of compatible materials, and flexible device fabrication. An important aspect of OPV device efficiency is good contact engineering. The use of oxide thin films for this application offers increased design flexibility and improved chemical stability. Here we present our investigation of radio frequency magnetron sputtered nickel oxide (NiO{sub x}) deposited from oxide targets as an efficient, easily scalable hole transport layer (HTL) with variable work-function, ranging from 4.8 to 5.8 eV. Differences in HTL work-function were not found to result in statistically significant changes in open circuit voltage (V{sub oc}) for poly(3-hexylthiophene):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (P3HT:PCBM) BHJ device. Ultraviolet photoemission spectroscopy (UPS) characterization of the NiO{sub x} film and its interface with the polymer shows Fermi level alignment of the polymer with the NiO{sub x} film. UPS of the blend also demonstrates Fermi level alignment of the organic active layer with the HTL, consistent with the lack of correlation between V{sub oc} and HTL work-function. Instead, trends in j{sub sc}, V{sub oc}, and thus overall device performance are related to the surface treatment of the HTL prior to active layer deposition through changes in active layer thickness.

Widjonarko, N. E.; Ratcliff, E. L.; Perkins, C. L.; Sigdel, A. K.; Zakutayev, A.; Ndione, P. F.; Gillaspie, D. T.; Ginley, D. S.; Olson, D. C.; Berry, J. J.

2012-03-01T23:59:59.000Z

408

Sputter deposition of thin film MIM capacitors on LTCC substrates for RF bypass and filtering applications  

SciTech Connect

Thin film capacitors for RF bypass and filtering applications were sputter deposited onto low temperature co-fired ceramic (LTCC) substrates. The capacitors were configured in a metal-insulator-metal (MIM) design featuring 200 nm thick Al electrodes and a 300 nm thick Al{sub 2}O{sub 3} dielectric layer, with dimensions varied between ~150x150 ?m and ~750x750 ?m. DC current-voltage measurements (E ? 5 MV/cm) coupled with impedance analysis (?15 MHz) was used to characterize the resulting devices. More than 90% of the devices functioned as capacitors with high DC resistance (>20 M?) and low loss (tan ? <0.1). A second set of capacitors were made under the same experimental conditions with device geometries optimized for high frequency (?200 MHz) applications. These capacitors featured temperature coefficient of capacitance (TCC) values between 500 and 1000 ppm/°C as well as low loss and high self-resonant frequency performance (ESR <0.6 Ohms at self-resonance of 5.7 GHz for 82 pF). Capacitance and loss values were comparable between the capacitor structures of similar areas at the different frequency regimes.

Murray, Jack [Missouri University of Science and Technology; O'Keefe, Matthew J. [Missouri University of Science and Technology; Wilder, Kristina [Missouri University of Science and Technology; Eatinger, Ryan [Kansas State University; Kuhn, William [Kansas State University; Krueger, Daniel S. [Honeywell Federal Manufacturing & Technologies; Wolf, J. Ambrose [Honeywell Federal Manufacturing & Technologies

2011-08-31T23:59:59.000Z

409

Thin silicon solar cells  

SciTech Connect

The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M. [Astro Power Inc., Solar Park, Newark, DE (United States)

1992-12-01T23:59:59.000Z

410

Nanostructured silicon thin films deposited by PECVD in the presence of silicon nanoparticles  

SciTech Connect

Nanostructured silicon thin films have been deposited by plasma enhanced chemical vapor deposition at low substrate temperature (100 C) in the presence of silicon nanoparticles. The nanostructure of the films was revealed by transmission electron microscopy, Raman spectroscopy and X-ray diffraction, which showed ordered silicon domains (1--2 nm) embedded in an amorphous silicon matrix. These ordered domains are due to the particles created in the discharge that contribute to the film growth. One consequence of the incorporation of nanoparticles is the accelerated crystallization of the nanostructured silicon thin films when compared to standard a-Si:H, as shown by the electrical characterization during the annealing.

Viera, G.; Cabarrocas, P.R.; Hamma, S.; Sharma, S.N.; Costa, J.; Bertran, E.

1997-07-01T23:59:59.000Z

411

Crystal coherence length effects on the infrared optical response of MgO thin films.  

SciTech Connect

The role of crystal coherence length on the infrared optical response of MgO thin films was investigated with regard to Reststrahlen band photon-phonon coupling. Preferentially (001)-oriented sputtered and evaporated ion-beam assisted deposited thin films were prepared on silicon and annealed to vary film microstructure. Film crystalline coherence was characterized by x-ray diffraction line broadening and transmission electron microscopy. The infrared dielectric response revealed a strong dependence of dielectric resonance magnitude on crystalline coherence. Shifts to lower transverse optical phonon frequencies were observed with increased crystalline coherence. Increased optical phonon damping is attributed to increasing granularity and intergrain misorientation.

Boreman, Glenn D. (University of Central Florida, Orlando, FL); Kotula, Paul Gabriel; Rodriguez, Mark Andrew; Shelton, David J. (University of Central Florida, Orlando, FL); Carroll, James F., III; Sinclair, Michael B.; Ihlefeld, Jon F.; Ginn, James Cleveland, III; Clem, Paul Gilbert; Matias, Vladimir (Los Alamos National Laboratory, Los Alamos, NM)

2010-07-01T23:59:59.000Z

412

Crystal coherence length effects on the infrared optical response of MgO thin films  

SciTech Connect

The role of crystal coherence length on the infrared optical response of MgO thin films was investigated with regard to Reststrahlen band photon-phonon coupling. Preferentially (001)-oriented sputtered and evaporated ion-beam assisted deposited thin films were prepared on silicon and annealed to vary film microstructure. Film crystalline coherence was characterized by x-ray diffraction line broadening and transmission electron microscopy. The infrared dielectric response revealed a strong dependence of dielectric resonance magnitude on crystalline coherence. Shifts to lower transverse optical phonon frequencies were observed with increased crystalline coherence. Increased optical phonon damping is attributed to increasing granularity and intergrain misorientation.

Ihlefeld, J. F.; Ginn, J. C.; Rodriguez, M. A.; Kotula, P. G.; Carroll, J. F. III; Clem, P. G.; Sinclair, M. B. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Shelton, D. J.; Boreman, G. D. [College of Optics and Photonics/CREOL, University of Central Florida, Orlando, Florida 32816 (United States); Matias, V. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

2010-11-08T23:59:59.000Z

413

Thin-film device for process measurement. Final report  

SciTech Connect

The development of a compact, portable planar waveguide spectrometer has been developed and successfully applied to a variety of chemical and petrochemical analytical problems. The technology is well suited to liquid samples that are difficult to analyze by conventional means.

Goldman, D.S.

1996-02-01T23:59:59.000Z

414

Interfacial studies of a thin-film Li2Mn4O9 electrode  

NLE Websites -- All DOE Office Websites (Extended Search)

Interfacial studies of a thin-film Li2Mn4O9 electrode Interfacial studies of a thin-film Li2Mn4O9 electrode Title Interfacial studies of a thin-film Li2Mn4O9 electrode Publication Type Journal Article Year of Publication 1999 Authors Kostecki, Robert, Fanping Kong, Yoshiaki Matsuo, and Frank R. McLarnon Journal Electrochimica Acta Volume 45 Pagination 225-233 Keywords interfacial films, manganese oxide electrode Abstract A thin-film spinel Li2Mn4O9 electrode was prepared by spin coating onto a Pt substrate. Spectroscopic ellipsometry, X-ray diffraction and current-sensing atomic force microscopy (CSAFM) were used to characterize interfacial processes and film formation at this electrode in the presence of 1.0 M LiPF6, EC:DMC (1:1 by volume) electrolyte. Prolonged exposure of the film to the electrolyte at ambient temperature resulted in spontaneous decomposition of the spinel to λ-MnO2 without disruption of the original structure. The surface of the resulting λ-MnO2 film exhibited no significant change in morphology, however a thin passive electrode surface layer was detected by the CSAFM probe. This electrode surface layer exhibited insulating properties and most likely contained Li2O, a by-product of Li2Mn4O9 decomposition.

415

Room temperature ferromagnetism in Co defused CdTe nanocrystalline thin films  

SciTech Connect

Nanocrystalline Co defused CdTe thin films were prepared using electron beam evaporation technique by depositing CdTe/Co/CdTe stacked layers with different Co thickness onto glass substrate at 373 K followed by annealing at 573K for 2 hrs. Structural, morphological and magnetic properties of of all the Co defused CdTe thin films has been investigated. XRD pattern of all the films exhibited zinc blende structure with <111> preferential orientation without changing the crystal structure of the films. The grain size of the films increased from 31.5 nm to 48.1 nm with the increase of Co layer thickness from 25nm to 100nm. The morphological studies showed that uniform texture of the films and the presence of Co was confirmed by EDAX. Room temperature magnetization curves indicated an improved ferromagnetic behavior in the films with increase of the Co thickness.

Rao, N. Madhusudhana; Kaleemulla, S.; Begam, M. Rigana [Materials Physics Division, School of Advanced Sciences, VIT University, Vellore - 632 014 (India)

2014-04-24T23:59:59.000Z

416

Flat panel display using Ti-Cr-Al-O thin film  

DOE Patents (OSTI)

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Jankowski, Alan F. (Livermore, CA); Schmid, Anthony P. (Solan Beach, CA)

2002-01-01T23:59:59.000Z

417

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Program Manager, Solar Program Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be using technology pioneered at the Department of Energy's National Renewable Energy Lab (NREL). The record-breaking Cadmium-Telluride (CdTe) thin film photovoltaic technology GE has chosen for its solar panels was originally developed more than a decade ago by a team of scientists led by NREL's Xuanzhi Wu, and

418

Femtosecond pump-probe studies of reduced graphene oxide thin films  

E-Print Network (OSTI)

The dynamics of photocarriers in reduced graphene oxide thin films is studied by using ultrafast pump-probe spectroscopy. Time dependent differential transmissions are measured with sample temperatures ranging from 9 to 300 K. At each sample...

Ruzicka, Brian Andrew; Werake, Lalani Kumari; Zhao, Hui; Wang, Shuai; Loh, Kian Ping

2010-04-01T23:59:59.000Z

419

Designing Randomness - The Impact of Textured Surfaces on the Efficiency of Thin-Film Solar Cells  

Science Journals Connector (OSTI)

We analyze experimentally and theoretically light localization at randomly textured ZnO surfaces and light absorption in thin-film amorphous Si deposited conformal on it. Guidance is...

Beckers, Thomas; Bittkau, Karsten; Carius, Reinhard; Fahr, Stephan; Rockstuhl, Carsten; Lederer, Falk

420

Design of plasmonic back structures for efficiency enhancement of thin-film amorphous Si solar cells  

Science Journals Connector (OSTI)

Metallic back structures with one-dimensional periodic nanoridges attached to a thin-film amorphous Si (a-Si) solar cell are numerically studied. At the interfaces between a-Si and...

Bai, Wenli; Gan, Qiaoqiang; Bartoli, Filbert; Zhang, Jing; Cai, Likang; Huang, Yidong; Song, Guofeng

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Plasmonic Back Structures Designed for Efficiency Enhancement of Thin Film Solar Cells  

Science Journals Connector (OSTI)

Metallic back structures with one-dimensional periodic nanoridges attached to thin-film amorphous silicon (a-Si) solar cell are proposed to enhance the cell efficiency in a wide...

Bai, Wenli; Gan, Qiaoqiang; Bartoli, Filbert; Song, Guofeng

422

Nanoscale Materials for Thin Film Cu(In,Ga)Se2 Solar Cells  

Science Journals Connector (OSTI)

Cu(In,Ga)Se2 solar cells show the highest efficiencies of all thin film technologies. Nano-particulate precursor materials could have the potential to lead this technology to...

Ahlswede, Erik

423

Optimization-based design of surface textures for thin-film Si solar cells  

E-Print Network (OSTI)

We numerically investigate the light-absorption behavior of thin-film silicon for normal-incident light, using surface textures to enhance absorption. We consider a variety of texture designs, such as simple periodic ...

Sheng, Xing

424

Polyelectrolyte multilayer thin films with antimicrobial, antifouling and drug releasing properties  

E-Print Network (OSTI)

This thesis work focuses on designing thin polyelectrolyte multilayer (PEM) films via layer-bylayer (LbL) deposition technique with the ability to kill pathogenic bacteria and inactivate human viruses, especially the ...

Wong, Sze Yinn (Sze Yinn Jessie)

2011-01-01T23:59:59.000Z

425

Apparatus for making cathodo- and photo- luminescent measurements of thin film phosphors  

E-Print Network (OSTI)

the understanding of the thin film phosphor, tungsten doped zinc oxide. Principally, a vacuum system is constructed and provides for both photo-and cathode-phosphor excitations. A measurement capability is then included. Finally, additions are mentioned...

Babuchna, Paul Michael

1998-01-01T23:59:59.000Z

426

Unpolarized emissivity of thin oil films over anisotropic Gaussian seas in infrared window regions  

Science Journals Connector (OSTI)

In this paper, we derive the unpolarized infrared (IR) emissivity of thin oil films over anisotropic Gaussian seas from a refined physical surface spectrum model of damping due to...

Pinel, Nicolas; Bourlier, Christophe; Sergievskaya, Irina

2010-01-01T23:59:59.000Z

427

Polymeric precursor derived nanocrystalline ZnO thin films using EDTA as chelating agent  

E-Print Network (OSTI)

properties, ZnO has plausible electro-optical applications, such as, solar cells [1, 2], light- emitting diodes [3, 4], UV lasers [5], thin film transistors [6,7], and UV photodetectors [8]. Besides

Mohanty, Saraju P.

428

Transparent and Conductive Carbon Nanotube Multilayer Thin Films Suitable as an Indium Tin Oxide Replacement  

E-Print Network (OSTI)

Transparent electrodes made from metal oxides suffer from poor flexibility and durability. Highly transparent and electrically conductive thin films based on carbon nanotubes (CNTs) were assembled as a potential indium tin oxide (ITO) replacement...

Park, Yong Tae

2012-07-16T23:59:59.000Z

429

Development of CdTe thin film solar cells on flexible foil substrates.  

E-Print Network (OSTI)

??Cadmium telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal band gap of 1.45 eV, its high optical absorption… (more)

Hodges, Deidra Ranel

2009-01-01T23:59:59.000Z

430

CdTe/CdS Thin Film Solar Cells Fabricated on Flexible Substrates.  

E-Print Network (OSTI)

??Cadmium Telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal bandgap of 1.45 eV and its high optical absorption… (more)

Palekis, Vasilios

2011-01-01T23:59:59.000Z

431

Electron-reflector strategy for CdTe thin-film solar cells.  

E-Print Network (OSTI)

??The CdTe thin-film solar cell has a large absorption coefficient and high theoretical efficiency. Moreover, large-area photovoltaic panels can be economically fabricated. These features potentially… (more)

Hsiao, Kuo-Jui

2010-01-01T23:59:59.000Z

432

Strain effect on coercive field of epitaxial barium titanate thin films S. Choudhury,1,a  

E-Print Network (OSTI)

reduced to zero and coercive field electric field re- quired to reduce the net polarization to zero . From of magnitude higher compared to a thin film under zero substrate strain.11 However, some reports show

Chen, Long-Qing

433

Active-head sliders using piezoelectric thin films for flying height control  

Science Journals Connector (OSTI)

This paper describes design and fabrication of a MEMS-based active-head slider using a PZT thin film for flying height control in hard disk drives. A piezoelectric cantilever integrated in the ... air bearing sli...

Kenji Suzuki; Takayuki Akimatsu; Kenji Sasaki; Masayuki Kurita

2005-08-01T23:59:59.000Z

434

Theory of first-order layering transitions in thin helium films  

E-Print Network (OSTI)

Thin liquid He-4 films on graphite show evidence of layered growth with increasing number density via a succession of first-order phase transitions. These so-called ''layering transitions'' separate uniformly covering phases, such as monolayers...

Saslow, WM; Agnolet, Glenn; Campbell, CE; Clements, BE; Krotscheck, E.

1996-01-01T23:59:59.000Z

435

Solid state thin film battery having a high temperature lithium alloy anode  

DOE Patents (OSTI)

An improved rechargeable thin-film lithium battery involves the provision of a higher melting temperature lithium anode. Lithium is alloyed with a suitable solute element to elevate the melting point of the anode to withstand moderately elevated temperatures.

Hobson, David O. (Oak Ridge, TN)

1998-01-01T23:59:59.000Z

436

Analysis of potential applications for the templated dewetting of metal thin films  

E-Print Network (OSTI)

Thin films have a high surface-to-volume ratio and are therefore usually morphologically unstable. They tend to reduce their surface energy through transport of mass by diffusion. As a result, they decay into a collection ...

Frantzeskakis, Emmanouil

2005-01-01T23:59:59.000Z

437

E-Print Network 3.0 - ag thin films Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

new range of high... -stability thin-film resistors has been introduced to meet growing market requirements for passive components Source: Berns, Hans-Gerd - HaGe's homepage,...

438

Layer-by-Layer Assembly of a pH-Responsive and Electrochromic Thin Film  

E-Print Network (OSTI)

This article summarizes an experiment on thin-film fabrication with layer-by-layer assembly that is appropriate for undergraduate laboratory courses. The purpose of this experiment is to teach students about self-assembly ...

Schmidt, Daniel J.

439

Metallic to insulating transition in disordered pulsed laser deposited silicide thin films.  

E-Print Network (OSTI)

??A metal-to-insulating transition has been observed in iron, iron oxide, iron silicide and cobalt silicide thin films when deposited on Si substrate with a native… (more)

Abou Mourad, Houssam

2005-01-01T23:59:59.000Z

440

Towards Large Area Industrial Cost Competitive Coating for Thin Film Solar Electricity Production  

Science Journals Connector (OSTI)

Thin film PV market faces a struggling situation due to the need of reducing strongly prices, which can be done by increasing efficiency and reducing fabrication costs. Improvement of...

Bermudez, Veronica

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Earth-Abundant Materials for High-Efficiency Heterojunction Thin Film Solar Cells  

Science Journals Connector (OSTI)

We investigate materials for thin film solar cells that can meet tens of terawatts level deployment potential. As one of the candidates, cuprous oxide (Cu2O) is synthesized and...

Lee, Yun Seog; Bertoni, Mariana; Buonassisi, Tonio

442

Nanotribology: an UHV-SFM study on thin films of AgBr(001)  

Science Journals Connector (OSTI)

We performed scanning force microscopy (SFM) in ultrahigh vacuum (UHV) on AgBr thin films which were in... x tip and AgBr and NaCl, respectively. The two-dimensional histogram r...

R. Lüthi; E. Meyer; H. Haefke; L. Howald; H. -J. Güntherodt

1995-06-01T23:59:59.000Z

443

The bias-stress effect in pentacene organic thin-film transistors  

E-Print Network (OSTI)

Organic thin-film transistors (OTFTs) are promising for flexible large-area electronics. However, the bias-stress effect (BSE) in OTFTs causes operational instability that limits the usefulness of the OTFT technology in a ...

Ryu, Kyungbum

2010-01-01T23:59:59.000Z

444

Evaluation on the thin-film phase change material-based technologies  

E-Print Network (OSTI)

Two potential applications of thin film phase-change materials are considered, non-volatile electronic memories and MEMS (Micro-Electro-Mechanical Systems) actuators. The markets for those two applications are fast growing ...

Guo, Qiang, M. Eng. Massachusetts Institute of Technology

2006-01-01T23:59:59.000Z

445

Polycrystalline silicon thin-film solar cells on glass by ion-assisted deposition.  

E-Print Network (OSTI)

??Polycrystalline silicon (pc-Si, grain size > 1??m, no amorphous tissue) on glass is an interesting material for thin-film solar cells due to the low costs,… (more)

Straub, Axel

2005-01-01T23:59:59.000Z

446

Nanoparticle-based lift-off technique for ultra-thin nanoporous film preparation  

Science Journals Connector (OSTI)

Ultra-thin membrane with nanoscale through hole has great potential in biomedical applications, where precise controllability of porosity, pore size and film thickness is urgently required. The present work propo...

Wei Wang; Yu Zhao; YinHua Lei…

2008-06-01T23:59:59.000Z

447

Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)  

SciTech Connect

Capabilities fact sheet for the National Center for Photovoltaics: Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide that includes scope, core competencies and capabilities, and contact/web information.

Not Available

2011-06-01T23:59:59.000Z

448

Thermal Conductivity of Ordered Mesoporous Nanocrystalline Silicon Thin Films Made from Magnesium Reduction of Polymer-  

E-Print Network (OSTI)

Thermal Conductivity of Ordered Mesoporous Nanocrystalline Silicon Thin Films Made from Magnesium-assembly of mesoporous silica followed by magnesium reduction. The periodic ordering of pores in mesoporous silicon

Pilon, Laurent

449

Electrochemical properties of magnetron sputtered WO{sub 3} thin films  

SciTech Connect

Thin films of tungsten oxide (WO{sub 3}) were deposited on ITO substrates by using RF magnetron sputtering at oxygen and argon atmospheres of 6 Multiplication-Sign 10{sup -2}Pa and 4 Pa respectively. The chemical composition and surface morphology of the WO{sub 3} thin films have been studied by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) respectively. The results indicate that the deposited WO{sub 3} thin films are nearly stoichiometric. The electrochemical performances of the WO{sub 3} thin films have been evaluated by galvonostatic charging/discharging method. The discharge capacity was 15{mu}Ah/cm{sup 2}{mu}m at the initial cycle and faded rapidly in the first few cycles and stabilized at a lesser stage.

Madhavi, V.; Kondaiah, P.; Hussain, O. M.; Uthanna, S. [Department of Physics, Sri Venkateswara University, Tirupati - 517 502 (India)

2013-02-05T23:59:59.000Z

450

Technological assessment of light-trapping technology for thin-film Si solar cell  

E-Print Network (OSTI)

The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was analyzed from the technology, market, and ...

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

451

Integrated photonic structures for light trapping in thin-film Si solar cells  

E-Print Network (OSTI)

We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

Sheng, Xing

452

Kläui Ligand Thin Films for Rapid Plutonium Analysis by Alpha Spectrometry  

Science Journals Connector (OSTI)

Safety Considerations ... To further assess the use of the Kläui ligand thin films for environmental samples, a sample of contaminated Rocky Flats soil (NIST Standard Reference Material 4353A) was analyzed for plutonium. ...

Susan K. Hanson; Alexander H. Mueller; Warren J. Oldham, Jr.

2014-01-07T23:59:59.000Z

453

Effect of the nitrogen ion energy on the MBE growth of thin gallium nitride films  

Science Journals Connector (OSTI)

The influence of the energy of bombarding nitrogen ions on the growth of thin gallium nitride (GaN) films under molecular beam epitaxy (MBE) conditions has been simulated using the method of balance kinetic eq...

D. V. Kulikov; Yu. V. Trushin; V. S. Kharlamov

2010-03-01T23:59:59.000Z

454

Single Source Electron Beam Evaporation of Bi-Sr-Ca-Cu-O Thin Films  

Science Journals Connector (OSTI)

A modified electron beam evaporation technique for the deposition of BiSrCaCuO thin films has been developed. In contrast to the conventional hearthed electron beam crucible the design in the present study use...

M. Ghanashyam Krishna; G. K. Muralidhar…

1990-01-01T23:59:59.000Z

455

Dimensional dependence of electric resistance of thin TiB2 films  

Science Journals Connector (OSTI)

The dimensional effect of electrical resistance in thin films of TiB2 has been studied. Experimental results were processed within the framework of the Fuchs-Sondheimer theory. This has enabled us to estimate the...

A. S. Dranenko; L. A. Dvorina

456

Photocatalytic performance of TiO2 thin films connected with Cu micro-grid  

Science Journals Connector (OSTI)

Aiming at reducing the recombination of photo-induced carriers in semiconductor photocatalytic process, we prepared TiO2...thin film with its surface modified by a connected Cu micro-grid via a microsphere lithog...

HaiLing Zhu; JunYing Zhang; TianMin Wang…

2009-08-01T23:59:59.000Z

457

Energy collection and charge transfer processes in thin film photocells and photoelectrochemical cells: Final report  

SciTech Connect

The following paragraphs describe accomplishments and significant results for the two lines of research: (1) studies of energy collection and charge transfer processes in thin film systems and (2) solar energy utilization by photosensitized electrode processes at semiconductor electrodes.

Tachikawa, Hiroyasu

1981-12-31T23:59:59.000Z

458

MELT-MEDIATED LASER CRYSTALLIZATION OF THIN FILM NITI SHAPE MEMORY ALLOYS  

E-Print Network (OSTI)

matrix displays (e.g. LCD and OLED) as well as the active medium in thin film solar cells [4 of furnace, solid phase crystallization parameters (i.e. annealing temperature and dwell time

Yao, Y. Lawrence

459

Layer-by-layer assembly of electrically conductive polymer thin films  

E-Print Network (OSTI)

) to deposit layers of carbon black that are pre-stabilized with polyethylenimine (PEI) and poly(acrylic acid) (PAA) (see chemical structures in Fig. 3). The resulting films are thin, flexible, and relatively dense, with a high concentration of carbon black... within the deposition mixtures is described in Chapter III. Materials and Methods Materials Two types of polymers were used to stabilize carbon black for layer-by-layer (LbL) assembly of composite thin films. Poly(acrylic acid) (PAA...

Jan, Chien Sy Jason

2007-09-17T23:59:59.000Z

460

Metal-semiconductor hybrid thin films in field-effect transistors  

SciTech Connect

Metal-semiconductor hybrid thin films consisting of an amorphous oxide semiconductor and a number of aluminum dots in different diameters and arrangements are formed by electron beam lithography and employed for thin-film transistors (TFTs). Experimental and computational demonstrations systematically reveal that the field-effect mobility of the TFTs enhances but levels off as the dot density increases, which originates from variations of the effective channel length that strongly depends on the electric field distribution in a transistor channel.

Okamura, Koshi, E-mail: koshi.okamura@kit.edu; Dehm, Simone [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany)] [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany); Hahn, Horst [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany) [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany); KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt, Petersenstr. 32, 64287 Darmstadt (Germany)

2013-12-16T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Vibrational spectra of CO adsorbed on oxide thin films: A tool to probe the surface defects and phase changes of oxide thin films  

SciTech Connect

Thin films of iron oxide were grown on Pt(111) single crystals using cycles of physical vapor deposition of iron followed by oxidative annealing in an ultrahigh vacuum apparatus. Two procedures were utilized for film growth of ?15–30 ML thick films, where both procedures involved sequential deposition+oxidation cycles. In procedure 1, the iron oxide film was fully grown via sequential deposition+oxidation cycles, and then the fully grown film was exposed to a CO flux equivalent to 8 × 10{sup ?7} millibars, and a vibrational spectrum of adsorbed CO was obtained using infrared reflection-absorption spectroscopy. The vibrational spectra of adsorbed CO from multiple preparations using procedure 1 show changes in the film termination structure and/or chemical nature of the surface defects—some of which are correlated with another phase that forms (“phase B”), even before enough of phase B has formed to be easily detected using low energy electron diffraction (LEED). During procedure 2, CO vibrational spectra were obtained between deposition+oxidation cycles, and these spectra show that the film termination structure and/or chemical nature of the surface defects changed as a function of sequential deposition+oxidation cycles. The authors conclude that measurement of vibrational spectra of adsorbed CO on oxide thin films provides a sensitive tool to probe chemical changes of defects on the surface and can thus complement LEED techniques by probing changes not visible by LEED. Increased use of vibrational spectra of adsorbed CO on thin films would enable better comparisons between films grown with different procedures and by different groups.

Savara, Aditya, E-mail: savaraa@ornl.gov [Chemical Sciences Division, Oak Ridge National Lab, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831 (United States)

2014-03-15T23:59:59.000Z

462

Indium doped zinc oxide nanowire thin films for antireflection and solar absorber coating applications  

SciTech Connect

Indium doped ZnO nanowire thin films were prepared by thermal oxidation of Zn-In metal bilayer films at 500°C. The ZnO:In nanowires are 20-100 nm in diameter and several tens of microns long. X-ray diffraction patterns confirm the formation of oxide and indicate that the films are polycrystalline, both in the as deposited and annealed states. The transmission which is <2% for the as deposited Zn-In films increases to >90% for the ZnO:In nanowire films. Significantly, the reflectance for the as deposited films is < 10% in the region between 200 to 1500 nm and < 2% for the nanowire films. Thus, the as deposited films can be used solar absorber coatings while the nanowire films are useful for antireflection applications. The growth of nanowires by this technique is attractive since it does not involve very high temperatures and the use of catalysts.

Shaik, Ummar Pasha [ACRHEM, University of Hyderabad, Hyderabad-500046 (India); Krishna, M. Ghanashyam, E-mail: mgksp@uohyd.ac.in [ACRHEM and School of Physics, University of Hyderabad, Hyderabad-500046 (India)

2014-04-24T23:59:59.000Z

463

Absorber processing issues in high-efficiency, thin-film Cu(In,Ga)Se{sub 2}-based solar cells  

SciTech Connect

Three approaches to thin-film Cu(In,Ga)Se{sub 2} absorber fabrication are considered. They are generically described in terms of the sequential or concurrent nature of source material delivery, selenium delivery, and compound formation. A two-stage evaporation process successfully produced the absorber component of a world-record, 17.1{percent} efficient solar cell. Alternative approaches that reduce the requirements for high substrate temperatures are considered. The relationship between absorber process parameters, band gap profile, and device performance are examined. Engineering the [Ga]/([Ga]+[In]) profile in the absorber has led to the reported advances. {copyright} {ital 1996 American Institute of Physics.}

Tuttle, J.R.; Gabor, A.M.; Contreras, M.A.; Tennant, A.L.; Ramanathan, K.R.; Franz, A.; Matson, R.; Noufi, R. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

1996-01-01T23:59:59.000Z

464

High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD  

SciTech Connect

Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H{sub 2}, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are reduced; (3) surface hydrogen removal--heavier and more energetic helium ions break the Si-H much easier than hydrogen ions. The preferential attachment of Si-H to Ge-H is reduced. They also found that with the small amount of hydrogen put into the plasma, the superior properties of a-(Si,Ge):H made from pure hydrogen dilution plasma were still maintained. These hydrogen ions help to remove the subsurface weakly bonded hydrogen and buried hydrogen. They also help to passivate the Ge-dangling bond.

Yong Liu

2002-05-31T23:59:59.000Z

465

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY  

E-Print Network (OSTI)

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION, A. N. Tiwari Thin Film Physics Group, Laboratory for Solid State Physics, Technopark ETH-Building, Technoparkstr. 1, CH-8005 Zurich, Switzerland ABSTRACT: CdTe/CdS thin £lm solar cells have been grown by closed

Romeo, Alessandro

466

Enhanced stability of a dewetting thin liquid film in a single-frequency vibration field S. Shklyaev,1  

E-Print Network (OSTI)

amplitude equation for the averaged film thickness. We show that there exists a window in the frequencyEnhanced stability of a dewetting thin liquid film in a single-frequency vibration field S; published 31 March 2008 Dynamics of a thin dewetting liquid film on a vertically oscillating substrate

Khenner, Mikhail

467

Thin Film Cracking Modulated by Underlayer Creep by J. Liang, R. Huang, J.H. Prvost, and Z. Suo  

E-Print Network (OSTI)

: subcritical decohesion at the crack tip, and creep in the underlayer. In a thin-film microbridge over for the growth rate per temperature cycle of a channel crack in a brittle film, induced by ratcheting plasticThin Film Cracking Modulated by Underlayer Creep by J. Liang, R. Huang, J.H. Prévost, and Z. Suo

Huang, Rui

468

May 2003 NREL/CP-520-33933 Amorphous and Thin-Film  

E-Print Network (OSTI)

Roedern, J. Yang, P. Sims, X. Deng, V. Dalal, D. Carlson, and T. Wang Presented at the National and Thin-Film Silicon Brent P. Nelson,1 Harry A. Atwater,2 Bolko von Roedern,1 Jeff Yang,3 Paul Sims,4. (c) "Thin Silicon-on-Ceramic Solar Cells" by Paul Sims. (d

Deng, Xunming

469

Nanostructured columnar heterostructures of TiO2 and Cu2O enabled by a thin-film self-assembly approach: Potential for photovoltaics  

SciTech Connect

Significant efforts are being devoted to the development of semiconductor thin film and nanostructured material architectures as components of solar energy harvesting and conversion devices. In particular, nanostructured assemblies with well-defined geometrical shapes have emerged as possible highly efficient and economically viable alternatives to planar junction thin film architectures , , , . However, fabrication of inorganic nanostructures generally requires complicated and multiple step processing techniques, making them less suitable for large-scale manufacturing. Hence, innovative cell architectures and materials processing schemes are essential to large-scale integration and practical viability in photovoltaic devices. Here we present here a new approach towards nanostructured thin film solar cells, by exploiting phase-separated self-assembly , . Through a single-step deposition by rf magnetron sputtering, we demonstrate growth of an epitaxial, composite film matrix formed as self-assembled, well ordered, phase segregated, and oriented p-n type interfacial nanopillars of Cu2O and TiO2. The composite films were structurally characterized to atomic resolution by a variety of analytical tools, and evaluated for preliminary optical properties using absorption measurements. We find nearly atomically distinct Cu2O-TiO2 interfaces (i.e. a p-n junction), and an absorption profile that captures a wide range of the solar spectrum extending from ultraviolet to visible wavelengths. This work opens a novel avenue for development of simple and cost-effective optically active thin film architectures, and offers promise for significantly increased photovoltaic device efficiencies using nanostructured cells that can be optimized for both incident light absorption and carrier collection.

Polat, Ozgur [ORNL; Aytug, Tolga [ORNL; Lupini, Andrew R [ORNL; Paranthaman, Mariappan Parans [ORNL; Ertugrul, Memhet [Ataturk University; Bogorin, Daniela Florentina [ORNL; Meyer III, Harry M [ORNL; Wang, Wei [ORNL; Pennycook, Stephen J [ORNL; Christen, David K [ORNL

2013-01-01T23:59:59.000Z

470

Production of films and powders for semiconductor device applications  

DOE Patents (OSTI)

A process is described for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) Cu{sub x}Se{sub n}, wherein x=1--2 and n=1--3; (2) Cu{sub x}Ga{sub y}Se{sub n}, wherein x=1--2, y=0--1 and n=1--3; (3) Cu{sub x}In{sub y}Se{sub n}, wherein x=1--2.27, y=0.72--2 and n=1--3; (4) Cu{sub x}(InGa){sub y}Se{sub n}, wherein x=1--2.17, y=0.96--2 and n=1--3; (5) In{sub y}Se{sub n}, wherein y=1--2.3 and n=1--3; (6) Cu{sub x}S{sub n}, wherein x=1--2 and n=1--3; and (7) Cu{sub x}(InGa){sub y}(SeS){sub n}, wherein x=1--2, y=0.07--2 and n=0.663--3. A reaction vessel containing therein a substrate upon which will form one or more layers of semiconductor material is provided, and relevant solution mixtures are introduced in a sufficient quantity for a sufficient time and under favorable conditions into the vessel to react with each other to produce the resultant salt being prepared and deposited as one or more layers on the substrate and as a powder on the floor of the vessel. Hydrazine is present during all reaction processes producing non-gallium containing products and optionally present during reaction processes producing gallium-containing products to function as a strong reducing agent and thereby enhance reaction processes. 4 figs.

Bhattacharya, R.N.; Noufi, R.; Li Wang

1998-03-24T23:59:59.000Z

471

Light trapping in thin-film solar cells measured by Raman spectroscopy  

SciTech Connect

In this study, Raman spectroscopy is used as a tool to determine the light-trapping capability of textured ZnO front electrodes implemented in microcrystalline silicon (?c-Si:H) solar cells. Microcrystalline silicon films deposited on superstrates of various roughnesses are characterized by Raman micro-spectroscopy at excitation wavelengths of 442?nm, 514?nm, 633?nm, and 785?nm, respectively. The way to measure quantitatively and with a high level of reproducibility the Raman intensity is described in details. By varying the superstrate texture and with it the light trapping in the ?c-Si:H absorber layer, we find significant differences in the absolute Raman intensity measured in the near infrared wavelength region (where light trapping is relevant). A good agreement between the absolute Raman intensity and the external quantum efficiency of the ?c-Si:H solar cells is obtained, demonstrating the validity of the introduced method. Applications to thin-film solar cells, in general, and other optoelectronic devices are discussed.

Ledinský, M., E-mail: ledinsky@fzu.cz [Laboratory of Nanostructures and Nanomaterials, Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Cukrovarnická 10, 162 00 Prague (Czech Republic); Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); Moulin, E.; Bugnon, G.; Meillaud, F.; Ballif, C. [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); Ganzerová, K.; Vetushka, A.; Fejfar, A. [Laboratory of Nanostructures and Nanomaterials, Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Cukrovarnická 10, 162 00 Prague (Czech Republic)

2014-09-15T23:59:59.000Z

472

Epitaxial Pb(Zr, Ti)O3 thin films with coexisting tetragonal and rhombohedral phases  

Science Journals Connector (OSTI)

Epitaxial Pb(Zr, Ti)O3 thin films having coexisting tetragonal and rhombohedral phases have been successfully fabricated with the film compositions that correspond to the Zr-rich region of the morphotropic phase boundary (MPB). The key to the present success is to quantitatively understand the shift of the MPB under a film stress. The present fabrication has been theoretically justified by superimposing the computed temperature-dependent film stress on the theoretical temperature-stress (T-S) phase diagram and by delineating a probable phase-transition path upon cooling the film from the processing temperature.

S. Hoon Oh and Hyun M. Jang

2001-03-12T23:59:59.000Z

473

Blue photoluminescence in ZnGa{sub 2}O{sub 4} thin-film phosphors  

SciTech Connect

The growth and properties of luminescent ZnGa{sub 2}O{sub 4} thin films using pulsed laser ablation has been investigated. As-deposited films on glass and (100) MgO substrates exhibit blue-white photoluminescence with a broad emission band under ultraviolet excitation. In situ epitaxial films obtained on single crystal (100) MgO substrates possess enhanced luminescent intensity as compared to polycrystalline films on glass substrates. The enhanced luminescence in epitaxial films presumably reflects lower defect densities due to growth on low energy surfaces.

Lee, Yong Eui; Norton, David P.; Park, Chan; Rouleau, Christopher M.

2001-02-01T23:59:59.000Z

474

41.4: Discontinuous Alignment Thin-Film Formation by Self-Organized Dewetting  

E-Print Network (OSTI)

41.4: Discontinuous Alignment Thin-Film Formation by Self-Organized Dewetting Chung-Yung Lee, Man alignment layer [4]. In this paper, we study the formation of a discontinuous alignment film by a dewetting be produced. The alignments produced are robust. Moreover, the processing window is also maximized. 2

475

Analysis of a compressed thin film bonded to a compliant substrate: the energy scaling law  

E-Print Network (OSTI)

of Mathematical Sciences, New York University, kohn@cims.nyu.edu Department of Mathematics, UniversityAnalysis of a compressed thin film bonded to a compliant substrate: the energy scaling law Robert V energy, i.e. the membrane and bending energy of the film plus the elastic energy of the substrate

476

Layer-by-Layer Assembly of Clay-filled Polymer Nanocomposite Thin Films  

E-Print Network (OSTI)

A variety of functional thin films can be produced using the layer-by-layer assembly technique. In this work, assemblies of anionic clay and cationic polymer were studied with regard to film growth and gas barrier properties. A simple, yet flexible...

Jang, Woo-Sik

2010-01-14T23:59:59.000Z

477

Daylighting control performance of a thin-film ceramic electrochromic window: field study results  

E-Print Network (OSTI)

1 Daylighting control performance of a thin-film ceramic electrochromic window: field study results-film electrochromic (EC) windows were initiated at the new full-scale Window Systems testbed facility at the Lawrence of this emerging technology. Keywords: Building energy-efficiency; Electrochromic windows; Daylighting; Control

478

DISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

-scale problems such as energy demand, pollution, and environment safety. The cost ($/kWh) is the primaryDISSERTATION ANALYSIS OF IMPACT OF NON-UNIFORMITIES ON THIN-FILM SOLAR CELLS AND MODULES WITH 2-D-FILM SOLAR CELLS AND MODULES WITH 2-D SIMULATIONS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS

Sites, James R.

479

A study of plasma modification of low k polyimide thin film  

E-Print Network (OSTI)

. The effect of post metal annealing and a SiN[x] barrier layer between metal and polyimide on the properties of the polyimide film was studied. Plasma-modified, low k (dielectric constant), polyimide thin film has been studied for the future interlayer...

Chung, Taewoo

2002-01-01T23:59:59.000Z

480

Optical approach to thermopower and conductivity measurements in thin-film semiconductors  

SciTech Connect

An optical beam deflection technique is applied to measure the Joule and Peltier heat generated by electric currents through thin-film semiconductors. The method yields a spatially resolved conductivity profile and allows the determination of Peltier coefficients. Results obtained on doped hydrogenated amorphous silicon films are presented.

Dersch, H.; Amer, N.M.

1984-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "thin film devices" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Mechanical properties of surface modified silica low-k thin films  

Science Journals Connector (OSTI)

The surface modification of sol-gel deposited low-k thin films has been carried out successfully by trimethylchlorosilane (TMCS) using wet chemical treatment method. Ellipsometer is used to determine the thickness of films. The changes in chemical structure ... Keywords: Contact angle, Hydrophobic, Nano-indentation, Sol-gel, Surface modification

Yogesh S. Mhaisagar; Bhavana N. Joshi; Ashok M. Mahajan

2014-02-01T23:59:59.000Z

482

Formation and post-deposition compression of smooth and processable silicon thin films from nanoparticle suspensions  

E-Print Network (OSTI)

nanoparticle suspensions Noah T. Jafferisa) and James C. Sturm Department of Electrical Engineering, Princeton and processable silicon thin-films from single-crystal silicon-nanoparticle suspensions. Single-crystal Si-nanoparticles on printing silicon from nanoparticles has shown much promise.3,4 Ha¨rting et al.4 report screen-printed films

483

Resonant cavity enhanced light harvesting in flexible thin-film organic solar cells  

E-Print Network (OSTI)

of solar energy conversion be- cause they use thin films of photoactive material and can be manufactured achieving complete optical absorption and good carrier transport. A photoactive film thickness of 200 nm charge transport to allow for complete carrier extraction. To address this trade-off, absorption en

Fan, Shanhui

484

Atomic hydrogen interactions with amorphous carbon thin films Bhavin N. Jariwala,1  

E-Print Network (OSTI)

Atomic hydrogen interactions with amorphous carbon thin films Bhavin N. Jariwala,1 Cristian V-scale interactions of H atoms with hydrogenated amorphous carbon a-C:H films were identified using molecular dynamics through a detailed analysis of the MD trajectories. The MD simulations showed that hydrogenation occurs

Ciobanu, Cristian

485

Longitudinal-optical-vibration-induced high transparency of nominally opaque thin films  

Science Journals Connector (OSTI)

It has been theoretically demonstrated that a presence of a very thin cubic crystal film deposited on a substrate can substantially modify infrared optical properties of the structure. The effect is due to excitation of longitudinal-optical vibrations within the film.

R. Dragila and S. Vukovic

1990-02-15T23:59:59.000Z

486

Evolving crack patterns in thin films with the extended finite element method  

E-Print Network (OSTI)

-exist in the film. To describe subcritical crack growth, we prescribe a kinetic law that relates the crack velocity is susceptible to subcritical cracking, obeying a kinetic law that relates the velocity of each crack to its Elsevier Science Ltd. All rights reserved. Keywords: Crack patterns; Subcritical cracking; Thin films

Suo, Zhigang

487

Surface characterization and electronic structure of HgTe nanocrystalline thin films  

Science Journals Connector (OSTI)

Mercury telluride (HgTe) nanocrystalline thin films were synthesized using an electrochemical deposition technique. The surface morphology of the thin films were investigated by atomic force microscopy (AFM) as a function of the film thickness which shows that an increase in film thickness increases the surface roughness. The scaling exponents such as roughness exponent, ? and growth exponent, ? associated with the film growth, determined from surface and power spectral analysis using AFM are found to be 0.88±0.05 and 0.21±0.04 respectively. The shifting of the valence and core levels to higher binding energy as evidenced from x-ray photoelectron spectroscopy, suggest the change in electronic structure of the nano-HgTe films possibly due to the surface roughness.

S. Rath, D. Paramanik, S. N. Sarangi, S. Varma, and S. N. Sahu

2005-11-08T23:59:59.000Z

488

Characterization of Solidified Gas Thin Film Targets via Alpha Particle Energy Loss  

E-Print Network (OSTI)

A method is reported for measuring the thickness and uniformity of thin films of solidified gas targets. The energy of alpha particles traversing the film is measured and the energy loss is converted to thickness using the stopping power. The uniformity is determined by measuring the thickness at different positions with an array of sources. Monte Carlo simulations have been performed to study the film deposition mechanism. Thickness calibrations for a TRIUMF solid hydrogen target system are presented.

MUH collaboration; M. C. Fujiwara; G. A. Beer; J. L. Beveridge; J. L. Douglas; T. M. Huber; R. Jacot-Guillarmod; S. K. Kim; P. E. Knowles; A. R. Kunselman; M. Maier; G. M. Marshall; G. R. Mason; F. Mulhauser; A. Olin; C. Petitjean; T. A. Porcelli; J. Zmeskal

1996-10-06T23:59:59.000Z

489

Titanium nitride thin films deposited by reactive pulsed-laser ablation in RF plasma  

Science Journals Connector (OSTI)

Titanium nitride thin films were deposited on Si (100) substrates by pulsed laser ablation of a titanium target in a N2 atmosphere (gas pressure approx. 10 Pa) using a doubled frequency Nd:YAG laser (532 nm) also assisted by a 13.56-MHz radio frequency (RF) plasma. Deposition was carried out at various substrate temperatures ranging from 373 up to 873 K and films were analyzed by X-ray diffractometry, scanning electron microscopy and optical emission spectroscopy. A comparison between the ‘normal’ pulsed laser deposition (PLD) and the RF plasma-assisted PLD showed the influence of the plasma on the structural characteristics of the thin films.

A. Giardini; V. Marotta; S. Orlando; G.P. Parisi

2002-01-01T23:59:59.000Z

490

Method of preparing high-temperature-stable thin-film resistors  

DOE Patents (OSTI)

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Raymond, L.S.

1980-11-12T23:59:59.000Z

491

Investigation of hexadecanethiol self-assembled monolayers on cadmium tin oxide thin films  

Science Journals Connector (OSTI)

This study reports the use of variable angle reflectance Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy to investigate the formation of a 1-hexadecanethiol adlayer on cadmium tin oxide (CTO) thin film surfaces. These adlayers appear to be robust, ordered monolayers. The optical and electronic properties of CTO thin films chemically vapor deposited onto glass substrates were also investigated. The reflectance of the CTO films was dependent upon the incident angle of the impinging radiation and revealed a reflectance decrease indicative of a plasma frequency in the mid-IR using p-polarized radiation.

Crissy L. Rhodes; Scott H. Brewer; Jaap Folmer; Stefan Franzen

2008-01-01T23:59:59.000Z

492

Method of preparing high-temperature-stable thin-film resistors  

DOE Patents (OSTI)

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Raymond, Leonard S. (Tucson, AZ)

1983-01-01T23:59:59.000Z

493

Growth and characterization of Pt-protected Gd5Si4 thin films  

SciTech Connect

Successful growth and characterization of thin films of giant magnetocaloric Gd5(SixGe1?x)4 were reported in the literature with limited success. The inherent difficulty in producing this complex material makes it difficult to characterize all the phases present in the thin films of this material. Therefore, thin film of binary compound of Gd5Si4 was deposited by pulsed laser deposition. It was then covered with platinum on the top of the film to protect against any oxidation when the film was exposed to ambient conditions. The average film thickness was measured to be approximately 350?nm using a scanning electron microscopy, and the composition of the film was analyzed using energy dispersive spectroscopy. X-ray diffraction analysis indicates the presence of Gd5Si4 orthorhombic structure along with Gd5Si3 secondary phase. The transition temperature of the film was determined from magnetic moment vs. temperature measurement. The transition temperature was between 320 and 345?K which is close to the transition temperature of the bulk material. Magnetic moment vs. magnetic field measurement confirmed that the film was ferromagnetic below 342?K.

Hadimani, R. L.; Mudryk, Y.; Prost, T. E.; Pecharsky, V. K.; Gschneidner, K. A.; Jiles, D. C.

2014-05-07T23:59:59.000Z

494

Translating semiconductor device physics into nanoparticle films for electronic applications  

E-Print Network (OSTI)

This thesis explores and quantifies some of the important device physics, parameters, and mechanisms of semiconductor nanocrystal quantum dot (QD) electronic devices, and photovoltaic devices in particular. This involves ...

Wanger, Darcy Deborah

2014-01-01T23:59:59.000Z

495

1 000 000 "C/s thin film electrical heater: ln situ resistivity measurements of Al and Ti/Si thin films during ultra rapid thermal annealing  

E-Print Network (OSTI)

introduce a new technique for rapidly heating (10' "C/s) thin films using an electrical thermal annealing- ently, most commercial RTA systems use radiation-heating techniques via tungsten-halogen lamps. These systems typi- cally have a maximum heating rate of 100-300 "C/s. We introduce an alternative methodfor

Allen, Leslie H.

496

Theoretical study of the efficiency of CdS/PbS thin film solar cells  

Science Journals Connector (OSTI)

Abstract This work represents a theoretical analysis of a new type of thin film solar cells with structure glass/ITO/CdS/PbS/AL. The transmission spectrum was calculated based on the multi-reflections effect from all cell layers as well as absorption effect in both ITO and CdS layers. The calculations of spectral internal quantum efficiency were carried out based on the front and back surface recombination of PbS layer. The recombination losses in space-charge region were studied. The effect of thickness of the absorber layer on the calculations of short-circuit current density was studied under illumination condition of AM1.5 solar irradiation. The data of open circuit voltage, maximum voltage, maximum current density, fill factor, output power density and efficiency of CdS/PbS solar cell were estimated from the J–V characteristics curve under illumination effect. This study ignored the effect of metallic back contact and thus the incomplete absorption losses (transmission losses) take place at thin absorber layer. The obtained results showed that the 2 ?m thickness of the absorber layer is not sufficient to absorb all the transmitted photons from the window layer (CdS) and the selection of theses thin thicknesses of PbS in order to correspond with experimental implementations of these devices. Both the optical and recombination losses lead to decrease the current density by 82% (JSC = 7.28 mA/cm2) at thickness 0.5 ?m of PbS and these losses decreased to 67% (JSC = 16 mA/cm2) at thickness 2 ?m. The output power density and the cell efficiency increased with increasing the thickness of effective layer. The maximum cell efficiency of 4.13% was obtained at thickness of 2 ?m which is considered greater than those obtained experimentally.

H.A. Mohamed

2014-01-01T23:59:59.000Z

497

Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films  

SciTech Connect

Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2? = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (?E) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, ?. The value of n and k increases with the increase of substrate temperature.

Kumar, B. Rajesh, E-mail: rajphyind@gmail.com [Department of Physics, Sri Venkateswara University, Tirupati - 517 502, A.P, India and Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India); Hymavathi, B.; Rao, T. Subba [Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India)

2014-01-28T23:59:59.000Z

498

Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition  

SciTech Connect

We have fabricated ZnO source-gated thin film transistors (SGTFTs) with a buried TiW source Schottky barrier and a top gate contact. The ZnO active channel and thin high-? HfO{sub 2} dielectric utilized are both grown by atomic layer deposition at temperatures less than 130?°C, and their material and electronic properties are characterized. These SGTFTs demonstrate enhancement-mode operation with a threshold voltage of 0.91?V, electron mobility of 3.9 cm{sup 2} V{sup ?1} s{sup ?1}, and low subthreshold swing of 192?mV/decade. The devices also exhibit a unique combination of high breakdown voltages (>20?V) with low output conductances.

Ma, Alex M.; Gupta, Manisha; Shoute, Gem; Tsui, Ying Y.; Barlage, Douglas W., E-mail: barlage@ualberta.ca [Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada); Afshar, Amir; Cadien, Kenneth C. [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)] [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)

2013-12-16T23:59:59.000Z

499

A novel integrated structure of thin film GaN LED with ultra-low thermal resistance  

Science Journals Connector (OSTI)

This study proposes a novel packaging structure for vertical thin-GaN LED applications by integration of LED chip and silicon-based packaging process. The vertical thin film LED is...

Wen, Shih-Yi; Hu, Hung-Lieh; Tsai, Yao-Jun; Hsu, Chen-Peng; Lin, Re-Ching; Horng, Ray Hua

2014-01-01T23:59:59.000Z

500

Effects of Counterions on Nano-confined DNA Thin Films  

E-Print Network (OSTI)

DNA molecules spin-coated on amorphous quartz substrates are shown to form stable films. Electron density profiles (EDPs) along the film depth show that film prepared from aqueous solution of DNA exhibits layering of the molecules in three stacks parallel to the substrate whereas film prepared from counterion added solution does not have layering but have smaller thickness and enhanced surface roughness, although both films have 'liquid-like' height-height correlations. We explain these results by a model of film of a 'liquid' comprising of rod-like molecules where the counterion concentration in the liquid determines the rod length.

Nupur Biswas; Sreeja Chakraborty; Alokmay Datta; Munna Sarkar; Mrinmay K. Mukhopadhyay; Mrinal K. Bera; Hideki Seto

2014-04-03T23:59:59.000Z