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1

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

2

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

3

IEEE Energy2030 Atlanta, GA USA  

E-Print Network (OSTI)

of electricity generation from wind power. While the development is still going on, now wind turbine technology Wind turbine generators (WTG) convert wind energy into electrical power. Now large wind turbines of up around 30 to 40 kV. Fig. 2. Single line diagram of HVAC and HVDC interconnection of offshore wind farm

Hansen, René Rydhof

4

Presented at the ASHRAE Winter Meeting, Atlanta, GA, February 1721, 1996, and to be published in the Proceedings  

E-Print Network (OSTI)

LBL-37037 UC-1600 Presented at the ASHRAE Winter Meeting, Atlanta, GA, February 17­21, 1996 Berkeley National Laboratory is an equal opportunity employer. #12;LBL-37037 Mo-345 Presented atthe ASHRAE University of California Berkeley, CA 94720 September 1995 This research was jointly supported by ASHRAE

5

Presented at the ASHRAE Winter Meeting, Atlanta, GA, February 17-21, 1996, and published in the Proceedings. Calorimetric Measurements of Inward-Flowing Fraction  

E-Print Network (OSTI)

LBL-37038 Mo-346 Presented at the ASHRAE Winter Meeting, Atlanta, GA, February 17-21, 1996 was jointly supported by ASHRAE, as Research Project 548-RP under Agreement No. BG 87-127 with the U

6

Advancing Residential Retrofits in Atlanta  

SciTech Connect

This report will summarize the home energy improvements performed in the Atlanta, GA area. In total, nine homes were retrofitted with eight of the homes having predicted source energy savings of approximately 30% or greater based on simulated energy consumption.

Jackson, Roderick K [ORNL; Kim, Eyu-Jin [Southface Energy Institute; Roberts, Sydney [Southface Energy Institute; Stephenson, Robert [Southface Energy Institute

2012-07-01T23:59:59.000Z

7

2009 National Electric Transmission Congestion Study - Atlanta Workshop |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2009 National Electric Transmission Congestion Study - Atlanta 2009 National Electric Transmission Congestion Study - Atlanta Workshop 2009 National Electric Transmission Congestion Study - Atlanta Workshop On July 29, 2008, DOE hosted a regional pre-study workshop in Atlanta, GA to receive input and suggestions concerning the 2009 National Electric Transmission Congestion Study. The agenda and full transcript are available below. 7-29-08 Congestion Workshop Agenda - Atlanta, GA.pdf Transcript - 2009 National Electric Transmission Congestion Study Atlanta Workshop.pdf More Documents & Publications 2009 National Electric Transmission Congestion Study - San Francisco Workshop 2012 National Electric Transmission Congestion Study - St. Louis Workshop 2009 National Electric Transmission Congestion Study - Las Vegas Workshop

8

Atlanta Survey  

U.S. Energy Information Administration (EIA) Indexed Site

Profile of Motor-Vehicle Fleets in Atlanta 1994 Profile of Motor-Vehicle Fleets in Atlanta 1994 Assessing the Market for Alternative-Fuel Vehicles 13 Data Tables for Private Fleets There are two types of tables. One type provides counts of the number of fleets that fall into various categories of data. The other provides counts of the number of vehicles by characteristics. Where only fleet data are provided instead of vehicle data, it means that particular questionnaire item was asked at the fleet level only. Vehicle questions were recorded by type of vehicle not by individual vehicle. Table 1. Number of Private Fleets in Atlanta by Fleet Size and Selected Characteristics Fleet Size (number of vehicles) Selected Characteristics Total 6 to 19 20 to 49 50 or More Total Number of Fleets . . . . . . . . . . . . . . . 3,589

9

Microsoft PowerPoint - 6-03 DOE EM TEM Atlanta AREVA CCIM final 111010.ppt  

NLE Websites -- All DOE Office Websites (Extended Search)

November 17, 2010 November 17, 2010 Next-Generation Induction Melter Technology Development DOE EM Waste Processing Technical Exchange, Nov 16-18, 2010, Atlanta, GA Eric Tchemitcheff, AFS Print Close > DOE EM Waste Processing Technical Exchange - Nov 16-18, 2010 - Atlanta, GA 3 Presentation Outline Introduction CCIM Key Attributes CCIM Target Performance for Hanford WTP Applications EM Tank Waste R&D Plan Initiative 5.2.1  Scope and Objectives - CCIM Project CCIM Project - Proposed HLW Tasks and Milestones CCIM Project - Proposed LAW Tasks and Milestones CCIM Project - Summary FY10 Accomplishments CCIM Project - Anticipated Near-term Outcomes CCIM Project - Summary - Focus Areas Print Close > DOE EM Waste Processing Technical Exchange - Nov 16-18, 2010 - Atlanta, GA 4 DOE EM radwaste vitrification processing challenges are

10

Reinforced Plastics/Composites Institute, Annual Conference, 41st, Atlanta, GA, January 27-31, 1986, Preprint  

Science Conference Proceedings (OSTI)

The present conference on composite materials technologies encompasses topics in pultrusion techniques and products, matrix-reinforcement interface characteristics, filament winding and ply layup processes, resin curing cycles, marine applications, and reinforced thermoplastics. Also discussed are reaction injection molding processes, transportation applications, product markets, fillers and additives, testing methods, sheet molding compounds, corrosion prevention, design methods, basic research and development topics, and structural applications.

Not Available

1986-01-01T23:59:59.000Z

11

Atlanta, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Atlanta, Georgia: Energy Resources Atlanta, Georgia: Energy Resources (Redirected from Atlanta, GA) Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.7489954°, -84.3879824° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.7489954,"lon":-84.3879824,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

12

PM, Mercury, and Health Effects: A Workshop for Technical and Communications Staff: Proceedings of Air Quality Workshop Held on Octo ber 2, 2002, Atlanta, GA  

Science Conference Proceedings (OSTI)

An EPRI-sponsored workshop, entitled "PM, Mercury, and Health Effects: A Workshop for Technical and Communications Staff," was held in Atlanta, Georgia on October 2, 2002. Members of the Air Quality and Media Relations Groups conducted the workshop. Attendees were all utility-associated, although several attendees were from non-utility companies. In all, there were 69 attendees, of whom 39 had technical positions and 30 were involved with communications. The workshop was intended to serve as a primer for...

2002-12-03T23:59:59.000Z

13

TEC Rail TG Summary_Atlanta  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

March 5-6, 2007 Atlanta, GA March 5-6, 2007 Atlanta, GA Rail Topic Group Alex Thrower began the meeting and welcomed all topic group participants and support contractor staff. Mr. Thrower established that the following issues and sub-topic group matters required further consideration and in some cases next steps needed to be planned. These include: Inspections Checklist Mr. Thrower requested that members submit their feedback on the items inspected during point of origin and en route inspections in the form of a short listing. Next steps involve: * Presenting the checklist to Federal Railroad Administration (FRA) state managers in a preliminary format; * Discussions with DOT in regard to formatting the checklist; and * Development of a complete reference list to be placed onto blue cards to be used

14

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors  

E-Print Network (OSTI)

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

Lu, Bin

15

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

16

Atlanta- Sustainable Development Design Standards  

Energy.gov (U.S. Department of Energy (DOE))

In December 2003, the City of Atlanta passed a green building [http://www.atlantaga.gov/modules/showdocument.aspx?documentid=547 ordinance] that applies to city-owned facilities and city-funded...

17

Atlanta TEC Meeting -- Tribal Group Summary 3-6-07  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA - January 31, 2007 Atlanta, GA - January 31, 2007 Session Chaired by: Jay Jones (DOE, Office of Civilian Radioactive Waste Management, OCRWM) Regular Members in Attendance: Kenny Anderson (Las Vegas Paiute Tribe), Richard Arnold (Las Vegas Indian Center/Pahrump Paiute Tribe), Tony Boyd (Pueblo of Acoma), Rob Burnside (Confederated Tribes of the Umatilla Indian Reservation, CTUIR), Floyd Chaney (Mohegan Tribe), Sandra Covi (Union Pacific Railroad), Martha Crosland (DOE/Office of General Counsel, GC), Kristen Ellis (DOE/Intergovernmental and External Affairs, CI), Frank Gavigan (Mohegan Tribe), Ed Gonzales (ELG Engineering/Pueblo de San Ildefonso), Robert Gruenig (National Tribal Environmental Council, NTEC), Paloma Hill (OCRWM Intern), Judith Holm (OCRWM), Gayl Honanie (Hopi Tribe), Lisa Janairo

18

IEEE Energy2030 Atlanta, GA USA  

E-Print Network (OSTI)

vehicles. Car manufacturers understand this trend quite well and are developing new models. For the 90 and the average daily time that cars remain parked is 22 hours. A salient feature that these vehicles have into the grid. We focus on the design of a conceptual framework needs to integrate the electric vehicles

Gross, George

19

Atlanta Chemical Engineering LLC | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » Atlanta Chemical Engineering LLC Jump to: navigation, search Logo: Atlanta Chemical Engineering LLC Name Atlanta Chemical Engineering LLC Place Marietta, Georgia Zip 30064 Country United States Sector Biomass Year founded 2008 Company Type For Profit Company Ownership Private Small Business Yes References Atlanta Chemical Engineering LLC[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Atlanta Chemical Engineering LLC is a company based in Marietta, Georgia. References ↑ "Atlanta Chemical Engineering LLC" Retrieved from "http://en.openei.org/w/index.php?title=Atlanta_Chemical_Engineering_LLC&oldid=699086"

20

Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology  

DOE Green Energy (OSTI)

This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

Vernon, S.M. (Spire Corp., Bedford, MA (United States))

1993-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Atlanta, Indiana: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Edit with form History Share this page on Facebook icon Twitter icon Atlanta, Indiana: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates...

22

The Atlanta VA Medical Center The Atlanta VA Medical Center http://www.atlanta.va.gov/careers/ is seeking candidates for a Speech  

E-Print Network (OSTI)

The Atlanta VA Medical Center The Atlanta VA Medical Center http regarding this position. The Atlanta VA Medical Center is comprised of 173 operating hospital beds and 100 at the Atlanta VA Medical Center. We are affiliated with the Emory University School of Medicine and are located

Peterson, Blake R.

23

Clark Atlanta Universities (CAU) Energy Related Research Capabilities...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Clark Atlanta Universities (CAU) Energy Related Research Capabilities Clark Atlanta Universities (CAU) Energy Related Research Capabilities How energy related research has helped...

24

Atlanta residential energy consumption. Final report  

SciTech Connect

Energy consumption in Atlanta, Ga., was analyzed for single - family, townhouse, low - rise, and high - rise structures for 1955, which was selected as a typical weather year. A two - step procedure was employed in calculating energy requirements. In the first step, hourly heating and cooling loads were determined for each dwelling unit. In the second step, monthly and annual energy required to meet heating and cooling loads was calculated using specific heating, cooling, and ventilation systems. Design and structural features considered important in defining the residential structures were construction details and materials, heating and cooling equipment, types of fuels and energy used, and appliances and their energy consumption levels. Lifestyle parameters incorporated in the analysis included thermostat set points, relative humidity set points, type and number of appliances, daily profile of appliance use, and use of ventilation fans. The computer program for determining heating and cooling loads, or heat delivery / removal requirements, for each residence involved subroutines for ascertaining hourly load contributions throughout the year due to conduction, convection, air infiltration, radiation, and internal heat gain. The low - rise type of structure had a cooling load that was more than twice as large as the heating load. The other structures had cooling loads about 1.5 times as large as heating loads. Energy - conserving modifications, involving both structural and comfort control system changes, resulted in the following: single - family and townhouse residences achieved a 32 - percent annual heating load reduction and a 16 - percent cooling load reduction through structural modifications; and low - rise and high - rise residences achieved a 43 - percent reduction in primary energy consumption. Supporting data, illustrative layouts of the residences, and references are included.

Reed, J.E.; Barber, J.E.; White, B.

1976-08-01T23:59:59.000Z

25

Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Atlanta Airport Atlanta Airport Converts Shuttles to CNG to someone by E-mail Share Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Facebook Tweet about Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Twitter Bookmark Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Google Bookmark Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Delicious Rank Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Digg Find More places to share Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on AddThis.com... Sept. 9, 2012 Atlanta Airport Converts Shuttles to CNG L earn how an Atlanta company saves money and conserves fuel with compressed natural gas airport shuttles.

26

Microsoft Word - Transcript_Pre-2009 Congestion Study_Atlanta.doc  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7/29/2008 7/29/2008 Atlanta, GA Page 1 U.S. Department of Energy Pre-Congestion Study Regional Workshops for the 2009 National Electric Congestion Study Atlanta, GA July 29, 2008 9:00 a.m.-12:30 p.m. Transcript David Meyer: Ladies and gentlemen, I'm David Meyer from the Department of Energy. I want to welcome you to our workshop for upcoming 2009 congestion studies. I'm going to make a short presentation here scoping out what we have in mind and what our purposes are in holding this workshop. But, before I do that, I want to introduce some of my colleagues here, particularly Lot Cooke who is from our General Counsel's office. Several other people from my office at the Department of Energy: Mark Whitenton and Elliott Nethercutt; and Elizabeth

27

Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

Chung, Jinwook W. (Jinwook Will)

2008-01-01T23:59:59.000Z

28

Atlanta Community Leaders' Institute Conference | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta Community Leaders' Institute Conference Atlanta Community Leaders' Institute Conference Atlanta Community Leaders' Institute Conference April 15, 2013 - 1:31pm Addthis Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. What does this project do? Goal 1. Protect human health and the environment The Atlanta Community Leaders Institute (CLI) held a conference on February 8 and 9 at Morehouse School of Medicine, in Atlanta, Georgia. The conference was sponsored by the Medical University of South Carolina, U.S. Department of Energy, Southeastern Virtual Institute for Health and Wellness, U.S. Department of Defense, DeKalb County, Morehouse School of

29

Atlanta Community Leaders' Institute Conference | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta Community Leaders' Institute Conference Atlanta Community Leaders' Institute Conference Atlanta Community Leaders' Institute Conference April 15, 2013 - 1:31pm Addthis Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. What does this project do? Goal 1. Protect human health and the environment The Atlanta Community Leaders Institute (CLI) held a conference on February 8 and 9 at Morehouse School of Medicine, in Atlanta, Georgia. The conference was sponsored by the Medical University of South Carolina, U.S. Department of Energy, Southeastern Virtual Institute for Health and Wellness, U.S. Department of Defense, DeKalb County, Morehouse School of

30

Making Connections for Atlanta Students | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Making Connections for Atlanta Students Making Connections for Atlanta Students Making Connections for Atlanta Students June 4, 2013 - 4:29pm Addthis Mary Shoemaker A rising senior at Georgia Tech Editor's note: In the last week in April, Director Dot Harris of the U.S. Department of Energy's Office of Economic Impact and Diversity gathered alongside local energy leaders at Clark Atlanta University for the Atlanta Students in Energy and Climate Forum. Mary Shoemaker, a rising senior at Georgia Tech, was one of the student speakers at the event. The following is her perspective of the event. On a beautiful afternoon in April, I found myself surrounded by like-minded individuals: students, entrepreneurs, and professors gathered to share experiences and motivations in their pursuit of environmental stewardship.

31

Microsoft Word - Atlanta Agenda FINAL _2_.doc  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Westin Peachtree Plaza Hotel Westin Peachtree Plaza Hotel Atlanta, Georgia July 29, 2008 AGENDA 8:00 - 9:00 am Registration 9:00 - 9:15 am DOE Presentation Plans for the 2009 Congestion Study and Objectives of Workshop 9:15 - 10:30 am Panel I Panelists: Cindy Miller, Senior Attorney, Office of General Counsel, Florida Public Service Commission The Honorable Jim Sullivan, President, Alabama Public Service Commission Charles Terreni, Executive Director, South Carolina Public Service Commission Burl D. Till, III, Manager, Transmission Planning Department, Tennessee Valley Authority The Honorable Stan Wise, Commissioner, Georgia Public Service Commission 10:30 -10:45 am Break 10:45 - 12:00 pm Panel II Panelists: George Bartlett, Director, Transmission Planning and Operations, Entergy Services

32

Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology. Annual subcontract report, 1 August 1991--31 July 1992  

DOE Green Energy (OSTI)

This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, {approximately} 1 {times} 10{sup 5} cm{sup {minus}5}, as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 {times}10{sup 7} cm{sup {minus}2}. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

Vernon, S.M. [Spire Corp., Bedford, MA (United States)

1993-04-01T23:59:59.000Z

33

STATEMENT OF CONSIDERATIONS REQUEST BY ATLANTA GAS LIGHT AND...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

PLD-CHICAGO TEL:1 70 252 2779 P, 004 STATEMENT OF CONSIDERATIONS REQUEST BY ATLANTA GAS LIGHT AND ADSORBENT RESEARCH GROUP (AGLARG) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN...

34

Manufacturing technology development for CuInGaSe sub 2 solar cell modules  

DOE Green Energy (OSTI)

The report describes research performed by Boeing Aerospace and Electronics under the Photovoltaic Manufacturing Technology project. We anticipate that implementing advanced semiconductor device fabrication techniques to the production of large-area CuIn{sub 1-x}Ga{sub x}Se{sub 2} (CIGS)/Cd{sub 1-y}Zn{sub y}S/ZnO monolithically integrated thin-film solar cell modules will enable 15% median efficiencies to be achieved in high-volume manufacturing. We do not believe that CuInSe{sub 2} (CIS) can achieve this efficiency in production without sufficient gallium to significantly increase the band gap, thereby matching it better to the solar spectrum (i.e., x{ge}0.2). Competing techniques for CIS film formation have not been successfully extended to CIGS devices with such high band gaps. The SERI-confirmed intrinsic stability of CIS-based photovoltaics renders them far superior to a-Si:H-based devices, making a 30-year module lifetime feasible. The minimal amounts of cadmium used in the structure we propose, compared to CdTe-based devices, makes them environmentally safer and more acceptable to both consumers and relevant regulatory agencies. Large-area integrated thin-film CIGS modules are the product most likely to supplant silicon modules by the end of this decade and enable the cost improvements which will lead to rapid market expansion.

Stanbery, B.J. (Boeing Aerospace and Electronics Co., Seattle, WA (United States))

1991-11-01T23:59:59.000Z

35

NETL F 451.1/1-1, Categorical Exclusion Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta Alternative Fuel and Advanced Technology Vehicle Project Install compressed natural gas fueling station at 4420 Buford Hwy. Atlanta, GA. Steven Richardson Digitally...

36

Microsoft Word - Final TEC Notes Atlanta 07.doc  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

TRANSPORTATION EXTERNAL COORDINATION WORKING GROUP MEETING January 31-February 1, 2007 Atlanta, Georgia Welcome and Meeting Overview The U.S. Department of Energy (DOE), Transportation External Coordination Working Group (TEC) held its 27th meeting on January 31-February 1, 2007, in Atlanta, Georgia. One hundred thirteen participants, representing national, State, Tribal, and local government; industry; professional organizations; and other interested parties, met to address a variety of issues related to DOE's radioactive materials transportation activities. The TEC process includes the involvement of these key stakeholders in developing solutions to DOE transportation issues through their actual participation in the work product. These members

37

Comparison of Methods for Estimating Mixing Height Used during the 1992 Atlanta Field Intensive  

Science Conference Proceedings (OSTI)

During the summer of 1992, measurements of the boundary layer mixing height were conducted at five locations around the city of Atlanta, Georgia, as part of the 1992 Atlanta Field Intensive of the Southern Oxidants Research Program on Ozone Non-...

Frank J. Marsik; Kenneth W. Fischer; Tracey D. McDonald; Perry J. Samson

1995-08-01T23:59:59.000Z

38

Particle-induced mitigation of SEU sensitivity in high data rate GaAs HIGFET technologies  

Science Conference Proceedings (OSTI)

Proton and heavy ion data on two GaAs HIGFET logic families, one source coupled (SCFL) and the other complementary (C-HIGFET), show the importance of dynamic testing and develop a new technique for mitigating SEU sensitivity by minimizing charge enhancement effects.

Marshall, P.W.; Weatherford, T.R. [Naval Research Lab., Washington, DC (United States)]|[SFA, Inc., Landover, MD (United States); Dale, C.J. [Naval Research Lab., Washington, DC (United States); La Macchia, M. [Motorola, Inc., Phoenix, AZ (United States); LaBel, K.A. [National Aeronautics and Space Administration, Greenbelt, MD (United States)

1995-12-01T23:59:59.000Z

39

North Atlanta, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

North Atlanta, Georgia: Energy Resources North Atlanta, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.8651033°, -84.3365917° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.8651033,"lon":-84.3365917,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

40

Underground Storage Technology Consortium  

NLE Websites -- All DOE Office Websites (Extended Search)

U U U N N D D E E R R G G R R O O U U N N D D G G A A S S S S T T O O R R A A G G E E T T E E C C H H N N O O L L O O G G Y Y C C O O N N S S O O R R T T I I U U M M R R & & D D P P R R I I O O R R I I T T Y Y R R E E S S E E A A R R C C H H N N E E E E D D S S WORKSHOP PROCEEDINGS February 3, 2004 Atlanta, Georgia U U n n d d e e r r g g r r o o u u n n d d G G a a s s S S t t o o r r a a g g e e T T e e c c h h n n o o l l o o g g y y C C o o n n s s o o r r t t i i u u m m R R & & D D P P r r i i o o r r i i t t y y R R e e s s e e a a r r c c h h N N e e e e d d s s OVERVIEW As a follow up to the development of the new U.S. Department of Energy-sponsored Underground Gas Storage Technology Consortium through Penn State University (PSU), DOE's National Energy Technology Center (NETL) and PSU held a workshop on February 3, 2004 in Atlanta, GA to identify priority research needs to assist the consortium in developing Requests for Proposal (RFPs). Thirty-seven

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Southern Company Photovoltaic Evaluation in Atlanta: Analysis of Field Data from Seven 4-kW PV Systems at Georgia Power Headquarters During 20102012  

Science Conference Proceedings (OSTI)

Seven photovoltaic (PV) power systems using different module technologies were installed on the rooftop of Georgia Powers headquarters in Atlanta. This report describes the output performance of these small-scale systems (about 4 kW each) relative to the available solar resource at the site. The main objective of this evaluation has been to assess performance characteristics of commercially available module technologies in a southeastern U.S. climate. To ensure a reliable comparison, all ...

2013-01-28T23:59:59.000Z

42

Energy Management Program at Atlanta Postal Service Distribution Center  

E-Print Network (OSTI)

The US Postal Service operates more than 38,000 post offices across the country and spends $350 million annually on utilities (1). Driven by President Clinton's 1999 Executive Order that mandates a 35 percent reduction in federal energy consumption by 2010, the Postal Service is aggressively pursuing energy savings (2). One long-range approach initiated in the Atlanta area is the implementation of MSE 2000, a structured management system for energy. MSE 2000 emphasizes training, development of standard operating procedures, energy monitoring, and team-based problem solving. Implementation activity at the Atlanta Bulk Mail Facility has included a gap analysis, selection of an implementation team, and initial training. During the first quarter of 2001, the energy manual, energy system work procedures and instructions, and energy team training will be completed. This will put the facility on target for formal registration of the management system in the third quarter of 2001. Improved operating and maintenance practices are expected to reduce energy usage by 5-10 percent, and the formal management system will help sustain the savings.

Brown, M.

2001-01-01T23:59:59.000Z

43

Test results from the GA technologies engineering-scale off-gas treatment system  

SciTech Connect

One method for reducing the volume of HTGR fuel prior to reprocessing or spent fuel storage is to crush and burn the graphite fuel elements. The burner off-gas (BOG) contains radioactive components, principally H-3, C-14, Kr-85, I-129, and Rn-220, as well as chemical forms such as CO/sub 2/, CO, O/sub 2/, and SO/sub 2/. The BOG system employs components designed to remove these constitutents. Test results are reported for the iodine and SO/sub 2/ adsorbers and the CO/HT oxidizer. Silver-based iodine adsorbents were found to catalyze the premature conversion of CO to CO/sub 2/. Subsequent tests showed that iodine removal could not be performed downstream of the CO/HT oxidizer since iodine in the BOG system rapidly deactivated the Pt-coated alumina CO catalyst. Lead-exchanged zeolite (PbX) was found to be an acceptable alternative for removing iodine from BOG without CO conversion. Intermittent and steady-state tests of the pilot-plant SO/sub 2/ removal unit containing sodium-exchanged zeolite (NaX) demonstrated that decontamination factors greater than or equal to 100 could be maintained for up to 50 h. In a reprocessing flowsheet, the solid product from the burners is dissolved in nitric or Thorex acid. The dissolver off-gas (DOG) contains radioactive components H-3, Kr-85, I-129, Rn-220 plus chemical forms such as nitrogen oxides (NO/sub x/). In the pilot-scale system at GA, iodine is removed from the DOG by adsorption. Tests of iodine removal have been conducted using either silver-exchanged mordenite (AgZ) or AgNO/sub 3/-impregnated silica gel (AC-6120). Although each sorbent performed well in the presence of NO/sub x/, the silica gel adsorbent proved more efficient in silver utilization and, thus, more cost effective.

Jensen, D.D.; Olguin, L.J.; Wilbourn, R.G.

1984-06-01T23:59:59.000Z

44

Statement by Energy Secretary Steven Chu on Opening of Atlanta Job Training  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Opening of Atlanta Job Opening of Atlanta Job Training Center Statement by Energy Secretary Steven Chu on Opening of Atlanta Job Training Center October 26, 2010 - 12:00am Addthis WASHINGTON, D.C. - U.S. Energy Secretary Steven Chu issued the following statement on today's grand opening of the Southeast Weatherization & Energy Efficiency Training (SWEET) Center in Atlanta, Georgia. "The SWEET Center in Atlanta will play a critical role in training thousands of workers for new jobs, laying the foundation for continued growth in this developing industry. With help from the Recovery Act, this program will provide workers with the skills they need to offer local homeowners quality energy efficiency upgrades that will save them money by saving energy." BACKGROUND INFORMATION ON TODAY'S ANNOUNCEMENT

45

Registration Open for National Environmental Justice Advisory Council (NEJAC) Public Meeting, September 11-12, 2013, Atlanta, Georgia  

Energy.gov (U.S. Department of Energy (DOE))

Registration Open for National Environmental Justice Advisory Council (NEJAC) Public Meeting, September 11-12, 2013, Atlanta, Georgia.

46

Upper-Level Atmospheric Circulation Patterns and Ground-Level Ozone in the Atlanta Metropolitan Area  

Science Conference Proceedings (OSTI)

The purpose of this paper is to identify middle-troposphere circulation patterns associated with high ozone concentrations during JuneAugust of 200007 in the Atlanta, Georgia, metropolitan statistical area (MSA), which is located in the ...

Jeremy E. Diem; Melissa A. Hursey; Imani R. Morris; Amanda C. Murray; Ricardo A. Rodriguez

2010-11-01T23:59:59.000Z

47

Community transportation : alternative transportation provision in a low-income neighborhoods in southeast Atlanta  

E-Print Network (OSTI)

Regional transit agencies are ineffective at meeting many of the basic transportation needs of a clustered "Study Area" of low-income Atlanta neighborhoods. For transit dependant residents in the Study Area, getting to the ...

Alexander, James W., 1977-

2004-01-01T23:59:59.000Z

48

Patterns and Causes of Atlanta's Urban Heat IslandInitiated Precipitation  

Science Conference Proceedings (OSTI)

Because of rapid growth and urbanization of Atlanta, Georgia, over the past few decades, the city has developed a pronounced urban heat island (UHI) that has been shown to enhance and possibly to initiate thunderstorms. This study attempts to ...

P. Grady Dixon; Thomas L. Mote

2003-09-01T23:59:59.000Z

49

The Influence of Weather on Flight Operations at the Atlanta Hartsfield International Airport  

Science Conference Proceedings (OSTI)

The impact of various types of weather on aircraft operations for one airline for 3 yr at Atlanta Hartsfield International Airport is investigated. Impacts are expressed as delays defined in terms of the difference between the actual flight time ...

Peter J. Robinson

1989-12-01T23:59:59.000Z

50

Ga Air Compressor, Ga Air Compressor Products, Ga Air ...  

U.S. Energy Information Administration (EIA)

Ga Air Compressor, You Can Buy Various High Quality Ga Air Compressor Products from Global Ga Air Compressor Suppliers and Ga Air Compressor ...

51

An Update of the U.S. Clean Coal Technology Demonstration Program  

NLE Websites -- All DOE Office Websites (Extended Search)

Ofiice of Fossil Energy, U.S. Department of Energy Ofiice of Fossil Energy, U.S. Department of Energy Clean Coal Briefs Progress continued in the program this quarteras Southern Company Servic- es' SCR test project became the 23rd government/industry cooperative ven- ture to move into operations (see story p, 7). Look for results and other data in future issues of Clean Coul Today. Tthe Second Annual Clean Coal Technology Conference was held in Atlanta,GA,fromSeptember7-9,1993. This year's conference attracted a large number of overseas visitors who are interested in learning more about the clean coal technologies being demon- strated in the United States. Special thanks to the Southern States Energy Board for its help and hospitality this year, and to Georgia Power Company for its kind hospitality during the tour of

52

Atlanta's Kent Igleheart Brings Home 2001 Outstanding Coordinator Award: Clean Cities Alternative Fuel Information Series Fact Sheet  

DOE Green Energy (OSTI)

Fact sheet includes an overview of the accomplishments of Atlanta's Clean Cities coordinator Kent Igleheart, who received the 2001 Outstanding Coordinator Award.

LaRocque, T.

2001-08-21T23:59:59.000Z

53

Atlanta Suburb Greases the Path to Savings with Biodiesel | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta Suburb Greases the Path to Savings with Biodiesel Atlanta Suburb Greases the Path to Savings with Biodiesel Atlanta Suburb Greases the Path to Savings with Biodiesel December 7, 2011 - 3:33pm Addthis Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Chris Galm Marketing & Communications Specialist, Office of Energy Efficiency & Renewable Energy What does this project do? Reduces fuel consumption Saves the city money Extends the lifespan of city owned service vehicles "We sat down and actually met with several people out of the biodiesel industry and found out how amazingly simple it was for us to do this. To

54

Atlanta Suburb Greases the Path to Savings with Biodiesel | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta Suburb Greases the Path to Savings with Biodiesel Atlanta Suburb Greases the Path to Savings with Biodiesel Atlanta Suburb Greases the Path to Savings with Biodiesel December 7, 2011 - 3:33pm Addthis Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Chris Galm Marketing & Communications Specialist, Office of Energy Efficiency & Renewable Energy What does this project do? Reduces fuel consumption Saves the city money Extends the lifespan of city owned service vehicles "We sat down and actually met with several people out of the biodiesel industry and found out how amazingly simple it was for us to do this. To

55

Microsoft PowerPoint - Clark Atlanta DOE MEI Small Business presentation August 2009 for pdf.ppt [Compatibility Mode]  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

CLARK ATLANTA UNIVERSITY CLARK ATLANTA UNIVERSITY CLARK ATLANTA UNIVERSITY Presentation at the Presentation at the CLARK ATLANTA UNIVERSITY CLARK ATLANTA UNIVERSITY Presentation at the Presentation at the 10 10 th th Annual DOE MEI Small Business Conference Annual DOE MEI Small Business Conference CAU's Energy Related Research Capabilities CAU's Energy Related Research Capabilities 10 10 th th Annual DOE MEI Small Business Conference Annual DOE MEI Small Business Conference CAU's Energy Related Research Capabilities CAU's Energy Related Research Capabilities Ishrat M Khan Ph.D. Ishrat M Khan Ph.D. Ishrat M Khan Ph.D. Ishrat M Khan Ph.D. Director, Center for Functional Director, Center for Functional Nanoscale Nanoscale Materials Materials ikhan@cau.edu ikhan@cau.edu www cau edu/research www

56

Functional Imprinting Structures on GaN-Based Light-Emitting ...  

Science Conference Proceedings (OSTI)

Keywords: GaN, light-emitting diode (LED), imprinting technology, far-field pattern modulation, light extraction. 1. Introduction. GaN-based light-emitting diodes...

57

Microsoft Word - Chapter 12 - 2-10-11  

National Nuclear Security Administration (NNSA)

Years of Experience: 12 Connor, Steve, Radiological Transportation, Tetra Tech M.S., Physics, Georgia Institute of Technology, Atlanta, GA, 1974 B.S., Physics, Georgia Institute...

58

NETL F 451.1-1/1 Categorical Exclusion (CX) Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

PMCPower and Vehicle Tech. Div. 09 S. Richardson 382010 - 372015 Marrow, GA DeKalb CountyMetropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle...

59

NETL F 451.1-1/1 Categorical Exclusion (CX) Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

PMCPower and Vehicle Tech. Div. 09 S. Richardson 382010 - 372015 Morrow, GA DeKalb CountyMetropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle...

60

NETL F 451.1-1/1 Categorical Exclusion (CX) Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

ADVANCED TECHNOLOGY VEHICLE PROJECT Purchase and deployment of commercially available OEM natural gas fueled vehicles into DeKalb County (Atlanta GA area) sanitation fleet. 04 14...

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Bounds for nested law invariant coherent risk measures  

E-Print Network (OSTI)

School of Industrial & Systems Engineering, Georgia Institute of Technology, 765 Ferst Drive, Atlanta, GA 30332, e-mail: ashapiro@isye.gatech.edu.

62

SR0006  

NLE Websites -- All DOE Office Websites (Extended Search)

environmental cleanup science and technology are on display at the Department of Energy Environmental Management Science Program (EMSP) National Workshop in Atlanta, GA on April...

63

SOLVING MIXED INTEGER BILINEAR PROBLEMS USING MILP ...  

E-Print Network (OSTI)

School of Industrial and Systems Engineering, Georgia Institute of Technology, Atlanta, GA. ExxonMobil Research and Engineering Company, Annandale, NJ...

64

A Dynamic GISMulticriteria Technique for Siting the NASAClark Atlanta Urban Rain Gauge Network  

Science Conference Proceedings (OSTI)

Because Atlanta, Georgia, is a model of rapid transition from forest/agriculture land use to urbanization, NASA and other agencies have initiated programs to identify and understand how urban heat islands (UHIs) impact the environment in terms of ...

J. Marshall Shepherd; Olayiwola O. Taylor; Carlos Garza

2004-09-01T23:59:59.000Z

65

Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011  

SciTech Connect

This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

2011-05-01T23:59:59.000Z

66

Feasibility Study of Social Media to Reduce Intimate Partner Violence Among Gay Men in Metro Atlanta, Georgia  

E-Print Network (OSTI)

was administered via Facebook. Ninety-nine usable surveyssocial media, specifically Facebook, is a feasible method ofViolence in Atlanta to a Facebook group dedicated to the gay

Strasser, Sheryl M; Smith, Megan; Pendrick-Denney, Danielle; Boos-Beddington, Sarah; Chen, Ken; McCarty, Frances

2012-01-01T23:59:59.000Z

67

STATEMENT OF CONSIDERATIONS REQUEST BY ATLANTA GAS LIGHT AND ADSORBENT RESEARCH  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

AUub. -5'94(THU) 14:09 DO PLD-CHICAGO TEL:1 70 252 2779 P, 004 AUub. -5'94(THU) 14:09 DO PLD-CHICAGO TEL:1 70 252 2779 P, 004 STATEMENT OF CONSIDERATIONS REQUEST BY ATLANTA GAS LIGHT AND ADSORBENT RESEARCH GROUP (AGLARG) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER SUBCONTRACT NO. 466590 AT BROOKHAVEN NATIONAL LABORATORY; W(A) -9421, CH-0839 The Atlanta Gac Light and Adsorbent Rcscarch Group (AGLARG), a large business coneortium, hao petitioned for an advance waiver of patent rights under its Subcontract No. 466590 from Brookhaven National Laboratory, operated by Associated Univeraitico, Inc. under DOE Contract No. DE-AC02-76CH00016. The purpooc of this subcontract includes the design, fabrication, testing and demonstration of a fuel storage and fuel delivery system for at least two natural gas powered engines in light duty vehicles

68

Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment  

E-Print Network (OSTI)

Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate ...

Palacios, Tomas

69

Nanocrystals cylindrical microcavities exploiting thin-walled InGaAs/GaAs microtubes  

Science Conference Proceedings (OSTI)

This paper relies on the design and fabrication of CdSe/ZnS core/shell colloidal nanocrystals (NCs) cylindrical microcavities for microphotonics applications. The fabrication technology relies on the release of the strain in strained heterostructures, ... Keywords: Colloidal nanocrystals, InGaAs/GaAs microtubes, Strained multilayer

C. Giordano; M. T. Todaro; A. Salhi; L. Martiradonna; I. Viola; A. Passab; L. Carbone; G. Gigli; A. Passaseo; M. De Vittorio

2007-05-01T23:59:59.000Z

70

Prevailing Wind in the Meteor Zone (80100 km) over Atlanta and its Association with Midwinter Stratospheric Warming  

Science Conference Proceedings (OSTI)

The wind data generated by an all sky, continuous wave radio meteor wind facility at Atlanta (34N, 84W) is analyzed over the period of August 1974 through July 1975. Zonal and meridional components of the prevailing wind over the height range ...

Prakash M. Dolas; R. G. Roper

1981-01-01T23:59:59.000Z

71

Technologies  

Technologies Materials. Aggregate Spray for Air Particulate; Actuators Made From Nanoporous Materials; Ceramic Filters; Energy Absorbing Material; Diode Arrays for ...

72

Technologies  

Technologies Energy. Advanced Carbon Aerogels for Energy Applications; Distributed Automated Demand Response; Electrostatic Generator/Motor; Modular Electromechanical ...

73

Technologies  

Technologies Energy, Utilities, & Power Systems. Advanced Carbon Aerogels for Energy Applications; Distributed Automated Demand Response; Electrostatic Generator/Motor

74

Technologies  

Technologies Research Tools. Cell-Free Assembly of NanoLipoprotein Particles; Chemical Prism; Lawrence Livermore Microbial Detection Array (LLMDA) ...

75

Technologies  

Science & Technology. Weapons & Complex Integration. News Center. News Center. Around the Lab. Contacts. For Reporters. Livermore Lab Report. ...

76

Microsoft PowerPoint - 9-05 Lutze LUTZE - Atlanta Nov 2010.ppt  

NLE Websites -- All DOE Office Websites (Extended Search)

DuraLith Geopolymer Low DuraLith Geopolymer Low Temperature Waste Forms Werner Lutze, Weiliang Gong, and Ian L. Pegg Vitreous State Laboratory The Catholic University of America Washington, DC EM Waste Processing Technical Exchange Atlanta , , Nov. 16 - 18, 2010 Print Close 2 DuraLith Geopolymer Low Temperature Waste Forms A Geopolymer is .... .... an inorganic solid formed by poly-condensation: NaOH n{-O-Si-OH + HO-Al-O-}  {-O-Si-O-Al-O-} n + nH 2 O General formula: (Na,K) n [(SiO 2 ) z -AlO 2 ] n ·wH 2 O 'w' << 1 1≤ z ≤ 3 Print Close 3 DuraLith Geopolymer Low Temperature Waste Forms Geopolymers ....  ... can be made at room temperature from any reactive aluminosilicate with alkali hydroxide or alkali polysilicates  ... contain very little water after complete hardening  ... are resistant to acids

77

Lighting Enhancement of GaN LEDs by Applying p-Type Ni(P):SnO2 ...  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, Materials Science & Technology 2013. Symposium, Multifunctional Oxides. Presentation Title, Lighting Enhancement of GaN LEDs...

78

Technologies  

High Performance Computing (HPC) Technologies; Industrial Partnerships Office P.O. Box 808, L-795 Livermore, CA 94551 Phone: (925) 422-6416 Fax: (925) ...

79

China Ga Air Compressor, China Ga Air Compressor Products ...  

U.S. Energy Information Administration (EIA)

China Ga Air Compressor, China Ga Air Compressor Suppliers and Manufacturers Directory - Source a Large Selection of Ga Air Compressor Products at ...

80

Technolog  

NLE Websites -- All DOE Office Websites (Extended Search)

Research in Research in Science and Technolog y Sandia pushes frontiers of knowledge to meet the nation's needs, today and tomorrow Sandia National Laboratories' fundamental science and technology research leads to greater understanding of how and why things work and is intrinsic to technological advances. Basic research that challenges scientific assumptions enables the nation to push scientific boundaries. Innovations and breakthroughs produced at Sandia allow it to tackle critical issues, from maintaining the safety, security and effectiveness of the nation's nuclear weapons and preventing domestic and interna- tional terrorism to finding innovative clean energy solutions, develop- ing cutting-edge nanotechnology and moving the latest advances to the marketplace. Sandia's expertise includes:

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Highlights of the solar total energy systems, distributed collector systems, and research and development projects. Semiannual review, 26-27 January 1976, Atlanta, Georgia  

DOE Green Energy (OSTI)

The highlights of the ERDA Solar Thermal Branch Semiannual Review held in Atlanta, Georgia, on January 26-27, 1976, are presented. Status and plans for Total Energy Systems, Distributed Collectors, and Research and Development Projects are reviewed. (WHK)

Latta, A.F.

1976-03-26T23:59:59.000Z

82

Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

Technology Computers and the internet play an increasingly larger role in the lives of students. In this activity, students must use various web sites to locate specific pieces of...

83

Profile of motor-vehicle fleets in Atlanta 1994. Assessing the market for alternative-fuel vehicles  

Science Conference Proceedings (OSTI)

This document reports the results of the EIA survey of motorvehicle fleets, both private and municipal, in Atlanta. These data should be useful to those whose goal is to assist or participate in the early development of alternative-fuel vehicle markets. The data also should be useful to persons implementing motor-vehicle-related clean air programs or analyzing transportation energy use. Persons in the petroleum industry will find useful information regarding conventional fuels and the fuel-purchasing behavior of fleets.

NONE

1995-11-06T23:59:59.000Z

84

InGaAs and Ge MOSFETs with high ? dielectrics  

Science Conference Proceedings (OSTI)

InGaAs and Ge MOSFETs with high @k's are now the leading candidates for technology beyond the 15nm node CMOS. The UHV-Al"2O"3/Ga"2O"3(Gd"2O"3) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities ... Keywords: Atomic layer deposition, Germanium, High ? dielectrics, III-V Compound semiconductor, MOSFETs, Molecular beam epitaxy

W. C. Lee; P. Chang; T. D. Lin; L. K. Chu; H. C. Chiu; J. Kwo; M. Hong

2011-04-01T23:59:59.000Z

85

ANN-based GA for generating the sizing curve of stand-alone photovoltaic systems  

Science Conference Proceedings (OSTI)

Recent advances in artificial intelligence techniques have allowed the application of such technologies in real engineering problems. In this paper, an artificial neural network-based genetic algorithm (ANN-GA) model was developed for generating the ... Keywords: ANN, ANN-GA, GA, Prediction, Sizing curve, Stand-alone PV system

Adel Mellit

2010-05-01T23:59:59.000Z

86

Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Needs and Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting Atlanta, Georgia - March 16-18, 2011 May 2011 ii NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or

87

Technical report. Graduate Student Focus on Diversity Workshop, 1999 SIAM Annual Meeting, Atlanta, Georgia, May 12, 1999  

SciTech Connect

The Third SIAM Graduate Student Focus on Diversity workshop was held May 12 at the Sheraton Atlanta Hotel on the first day of the 1999 SIAM Annual Meeting. The day-long workshop consisted of several different activities: eight technical talks by under-represented minority graduate students, a lively panel discussion concerning the benefits of undergraduate summer research programs, informal luncheon and pizza breaks to foster social interaction, and an evening forum with candid discussions of graduate school experiences from a minority graduate student perspective. These sessions were open to the entire SIAM community and served to highlight the progress, achievements, and aspirations of the workshop participants.

1999-05-12T23:59:59.000Z

88

Solar Photovoltaics Research and Technology: The Revolution ...  

Science Conference Proceedings (OSTI)

Moreover, technology progress and ownership for next-generation solar PV mandates a ... Dislocations in Si-Doped LEC GaAs Revisited: A Spectrum Image

89

Ba-Ga (Barium - Gallium)  

Science Conference Proceedings (OSTI)

Ba-Ga crystallographic data...Ba-Ga crystallographic data Phase Composition, wt% Ga Pearson symbol Space group (Ba) 0 cI 2 Im m Ba 10 Ga 4.8 cF 176 Fd m Ba 8 Ga 7 30.8 cP 60 P 2 1 3 BaGa 2 50.4 hP 3 P 6/ mmm BaGa 4 67 tI 10 I 4/ mmm (Ga) 100 hP 2 P 6 3 / mmc...

90

GaN: Defect and Device Issues  

SciTech Connect

The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

1998-11-09T23:59:59.000Z

91

6-03 DOE EM TEM Atlanta AREVA CCIM final 111010  

technically feasible, and provide sufficient data to forecast cost and schedule to deploy the technology EM Tank Waste R&D Plan Initiative 5.2.1

92

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures  

Science Conference Proceedings (OSTI)

Double pulse doped ({delta}-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm{sup 2}/(V s) at sheet electron densities of 3.00 x 10{sup 12} and 3.36 x 10{sup 12} cm{sup -2}, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A. [Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)

2010-07-15T23:59:59.000Z

93

Collaborative Technologies for Distributed Science - Fusion Energy and High-Energy Physics (A25539)  

E-Print Network (OSTI)

General Atomics Report GA-A25539 (2006)24th Symposium on Fusion Technology Warsaw, pl, 2006999613320

Schissel, D.P.

2006-08-24T23:59:59.000Z

94

NETL F 451.1/1-1, Categorical Exclusion Designation Form  

NLE Websites -- All DOE Office Websites (Extended Search)

Station FE Georgia Institute of Technology SCNGO FY13-1524 months Richard Baker Atlanta, GA THCM Coupled Model for Hydrate-Bearing Sediments: Data Analysis and Design of New Field...

95

Urban airshed modeling of air quality impacts of alternative transportation fuel use in Los Angeles and Atlanta  

DOE Green Energy (OSTI)

The main objective of NREL in supporting this study is to determine the relative air quality impact of the use of compressed natural gas (CNG) as an alternative transportation fuel when compared to low Reid vapor pressure (RVP) gasoline and reformulated gasoline (RFG). A table lists the criteria, air toxic, and greenhouse gas pollutants for which emissions were estimated for the alternative fuel scenarios. Air quality impacts were then estimated by performing photochemical modeling of the alternative fuel scenarios using the Urban Airshed Model Version 6.21 and the Carbon Bond Mechanism Version IV (CBM-IV) (Geary et al., 1988) Using this model, the authors examined the formation and transport of ozone under alternative fuel strategies for motor vehicle transportation sources for the year 2007. Photochemical modeling was performed for modeling domains in Los Angeles, California, and Atlanta, Georgia.

NONE

1997-12-01T23:59:59.000Z

96

Ultra High p-doping Material Research for GaN Based Light Emitters  

Science Conference Proceedings (OSTI)

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

Vladimir Dmitriev

2007-06-30T23:59:59.000Z

97

In Proceedings of the 1999 IEEE/ASME International Conference on Advanced Intelligent Mechatronics, Atlanta, GA. Abstract Advanced mechatronic systems increasingly are  

E-Print Network (OSTI)

components of this equipment work together to perform the intricate processing and transport operations be an expensive proposition. For example, estimates place the capital cost of a new semiconductor fab at well over.g., [6, 8, 17]). Second, to help justify equipment capital costs, flexibly automated systems must operate

98

Ga-Zr (Gallium - Zirconium)  

Science Conference Proceedings (OSTI)

Ga-Zr crystallographic data...Ga 5 Zr 3 44.0 oC 32 Cmcm Ga 3 Zr 2 47 oF 40 Fdd 2 βGaZr 56.7 ? ? αGaZr 56.7 tI 16 I 4 1 / amd Ga 4 Zr 5 62.1 hP 18 P 6 3 / mcm Ga 2 Zr 3 66 tP 10 P 4/ mbm Ga 3 Zr 5 68.6 hP 16 P 6 3 / mcm GaZr 2 72.4 tI 12 I 4/ mcm (βZr) ~94 to 100 cI 2 Im m (αZr) 99.4 to 100 hP 2 P 6 3 / mmc...

99

AlGaN/GaN-based power semiconductor switches  

E-Print Network (OSTI)

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

100

Economic evaluation of the Annual Cycle Energy System. Volume I. Executive summary. Final report. [In Minneapolis, Atlanta, and Philadelphia  

Science Conference Proceedings (OSTI)

The objective of this study is to determine the energy effectiveness and the economic viability of the ACES concept. Three different classes of building are investigated, namely: single-family residence; multi-family residence; and commercial office building. The application of ACES to each of these building types is studied in three different climatic regions: Minneapolis, Atlanta, and Philadelphia. Computer programs - ACESIM for the residences and CACESS for the office building - were used, each comprised of four modules: loads; design; simulation; and economic. For each building type in each geographic location, the economic evaluation of the ACES is based on a comparison of the present worth of the ACES to the present worth of a number of conventional systems. The results of this analysis indicate that the economic viability of the ACES is very sensitive to the assumed value of the property tax, maintenace cost, and fuel-escalation rates, while it is relatively insensitive to the assumed values of other parameters. Fortunately, any conceivable change in the fuel-escalation rates would tend to increase the viability of the ACES concept. An increase in the assumed value of the maintenance cost or property tax would tend to make the ACES concept less viable; a decrease in either would tend to make the ACES concept more viable. The detailed results of this analysis are given in Section 5.4 of Volume II. 2 figures, 21 tables.

Not Available

1980-05-01T23:59:59.000Z

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101

Microsoft PowerPoint - 9-07 Case Atlanta HLW techexchange.ppt  

NLE Websites -- All DOE Office Websites (Extended Search)

Calcine Disposition Project Calcine Disposition Project Joel Case Calcine Disposition Project Federal Project Director November 17, 2010 Print Close 2 2 Calcine is Solidified First & Other Cycle Raffinates * Resulted in a 7 to 1 volume reduction * Capable of being safely stored for several hundred years in 43 large shielded bins contained in six bin sets Print Close 3 3 Calcine Generation History Campaign Parameters Begin End Volume gal Volume ft 3 Volume m 3 Curies Dec- 63 Mar - 81 4,081,000 77,300 2,189 Aug - 82 May - 00 3,644,000 78,000 2,209 Total 7,725,000 155,300 4,398 3.64E+07 Print Close 4 4 Calcine Solids Storage Facility (CSSF) Status CSSF Bins Capacity (m 3 ) In Use 1 12 227 2 7 851 3 7 1,130 4 3 486 5 7 1,010 6 7 1,506 Sub 43 5,210 Not in Use 7 7 1,784 Total 50 6,994 1 2 3 4 5 6 Print Close 5 Hot Isostatic Press Treatment Technology * The Department Selected Hot Isostatic

102

Status of cool roof standards in the United States  

E-Print Network (OSTI)

energy codes. Aside from California, these include Atlanta, GA; Chicago, IL; Florida; Georgia; Guam; and Hawaii.

Akbari, Hashem; Levinson, Ronnen

2008-01-01T23:59:59.000Z

103

Polarization-engineered GaN/InGaN/GaN tunnel diodes  

E-Print Network (OSTI)

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

2010-08-24T23:59:59.000Z

104

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

105

Low Cost Production of InGaN for Next-Generation Photovoltaic Devices  

SciTech Connect

The goal of this project is to develop a low-cost and low-energy technology for production of photovoltaic devices based on InGaN materials. This project builds on the ongoing development by Structured Materials Industries (SMI), of novel thin film deposition technology for Group III-Nitride materials, which is capable of depositing Group-III nitride materials at significantly lower costs and significantly lower energy usage compared to conventional deposition techniques. During this project, SMI demonstrated deposition of GaN and InGaN films using metalorganic sources, and demonstrated compatibility of the process with standard substrate materials and hardware components.

Nick M. Sbrockey, Shangzhu Sun, Gary S. Tompa,

2012-07-09T23:59:59.000Z

106

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name GA-SNC Solar Place Nevada Sector Solar Product Nevada-based PV project developer and joint venture of GA-Solar North America and...

107

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

108

Categorical Exclusion Determinations: National Energy Technology Laboratory  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3, 2011 3, 2011 CX-006451: Categorical Exclusion Determination Research and Development of an Advanced Low Temperature Heat Recovery Absorption Chiller CX(s) Applied: B3.6 Date: 08/03/2011 Location(s): Park Forest, Illinois Office(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory August 3, 2011 CX-006448: Categorical Exclusion Determination Carolina Blue Skies Initiative CX(s) Applied: A1, B5.1 Date: 08/03/2011 Location(s): Knightdale, North Carolina Office(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory August 3, 2011 CX-006446: Categorical Exclusion Determination DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project CX(s) Applied: A1, B5.1 Date: 08/03/2011 Location(s): Morrow, Georgia

109

Categorical Exclusion Determinations: National Energy Technology Laboratory  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

29, 2011 29, 2011 CX-005666: Categorical Exclusion Determination DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project CX(s) Applied: A1, B5.1 Date: 04/29/2011 Location(s): Marrow, Georgia Office(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory April 29, 2011 CX-005664: Categorical Exclusion Determination Development and Testing of Compact Heat Exchange Reactors (CHER) for Synthesis of Liquid Fuels CX(s) Applied: B3.6 Date: 04/29/2011 Location(s): Laramie, Wyoming Office(s): Fossil Energy, National Energy Technology Laboratory April 29, 2011 CX-005663: Categorical Exclusion Determination Vortex Tube Project Decommissioning Project CX(s) Applied: B3.6 Date: 04/29/2011 Location(s): Morgantown, West Virginia

110

NETL F 451.1-1/1 Categorical Exclusion (CX) Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA INSTALLATION OF RETAIL BIOFUEL INFRASTRUCTURE SUPPORTING I-75 GREEN CORRIODOR PROJECT Installation of E85 fueling infrastructure in Atlanta, Georgia. 02 16 2011 Steven...

111

Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures  

Science Conference Proceedings (OSTI)

The atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures were studied. It was shown that the deposition of GaAs of the same nominal thickness leads to the formation of pseudomorphic GaAs/GaP quantum wells (QW), fully relaxed GaAs/GaP self-assembled quantum dots (SAQDs), or pseudomorphic GaAsP/GaP SAQDs depending on the growth temperature. We demonstrate that the atomic structure of Ga(As,P)/GaP heterostructures is ruled by the temperature dependence of adatom diffusion rate and GaAs-GaP intermixing. The band alignment of pseudomorphic GaAs/GaP QW and GaAsP/GaP SAQDs is shown to be of type II, in contrast to that of fully relaxed GaAs/GaP SAQDs, which have the band alignment of type I with the lowest electronic states at the indirect L valley of the GaAs conduction band.

Abramkin, D. S.; Putyato, M. A.; Budennyy, S. A.; Gutakovskii, A. K.; Semyagin, B. R.; Preobrazhenskii, V. V.; Shamirzaev, T. S. [A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Pr. Lavrentyeva 13, 630090 Novosibirsk (Russian Federation); Kolomys, O. F.; Strelchuk, V. V. [V. E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, Pr. Nauki 41, 03028 Kiev (Ukraine)

2012-10-15T23:59:59.000Z

112

General Atomics (GA) Fusion News: A New Spin on Understanding...  

NLE Websites -- All DOE Office Websites (Extended Search)

General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New...

113

Rodefeld Landfill Ga Biomass Facility | Open Energy Information  

Open Energy Info (EERE)

Rodefeld Landfill Ga Biomass Facility Jump to: navigation, search Name Rodefeld Landfill Ga Biomass Facility Facility Rodefeld Landfill Ga Sector Biomass Facility Type Landfill Gas...

114

Direct analysis of cellulose in poplar stem by matrixassisted laser desorption/ionization imaging mass spectrometry  

NLE Websites -- All DOE Office Websites (Extended Search)

analysis analysis of cellulose in poplar stem by matrix- assisted laser desorption/ionization imaging mass spectrometry Seokwon Jung 1,3 , Yanfeng Chen 3 , M. Cameron Sullards 1,3 and Arthur J. Ragauskas 1,2,3 * 1 BioEnergy Science Center, Georgia Institute of Technology, 500 10 th St., Atlanta, GA 30332, USA 2 Institute of Paper Science and Technology, Georgia Institute of Technology, 500 10 th St., Atlanta, GA 30332, USA 3 School of Chemistry and Biochemistry, Georgia Institute of Technology, 901 Atlantic Drive, Atlanta, GA 30332, USA Received 10 July 2010; Revised 9 August 2010; Accepted 23 August 2010 Matrix-assisted laser desorption/ionization imaging mass spectrometry (MALDI-IMS) was applied to the analysis of the spatial distribution of cellulose on a cross-section of juvenile poplar (Populus deltoids) stems. Microcrystalline cellulose (MCC) was used to optimize matrix (2,5-dihydroxybenzoic

115

Enhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes  

SciTech Connect

The technology on the large overlap InGaN QWs developed in this program is currently implemented in commercial technology in enhancing the internal quantum efficiency in major LED industry in US and Asia. The scientific finding from this work supported by the DOE enabled the implementation of this step-like staggered quantum well in the commercial LEDs.

Tansu, Nelson; Dierolf, Volkmar; Huang, Gensheng; Penn, Samson; Zhao, Hongping; Liu, Guangyu; Li, Xiaohang; Poplawsky, Jonathan

2011-07-14T23:59:59.000Z

116

RECIPIENT:Gwinnett Co, GA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

117

Power Conversion Efficiency of AlGaAs/GaAs Schottky Diode for Low-Power On-Chip Rectenna Device Application  

Science Conference Proceedings (OSTI)

A Schottky diode has been designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences of Schottky barrier height from theoretical value are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are well rectified by the fabricated Schottky diodes and stable DC output voltage is obtained. Power conversion efficiency up to 50% is obtained at 1 GHz with series connection between diode and load. The fabricated the n-AlGaAs/GaAs Schottky diode provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai (Malaysia); Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 Skudai Johor Malaysia (Malaysia); Osman, Mohd Nizam [Telekom Research and Development, TM Innovation Centre, 63000 Cyberjaya (Malaysia)

2011-05-25T23:59:59.000Z

118

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

119

Technology Transfer: Available Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Biofuels Biofuels Biotechnology and Medecine Biotechnology & Medicine Chemistry Developing World Energy Efficient Technologies Energy Environmental Technologies...

120

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures  

Science Conference Proceedings (OSTI)

GaAsBi/GaAs/AlGaAs separate confinement heterostructures are grown using an asymmetric temperature profile due to the low optimal growth temperature of GaAsBi; the bottom AlGaAs barrier is grown at 610 Degree-Sign C, while the GaAsBi quantum well and the top AlGaAs barrier are grown at 320 Degree-Sign C. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that this approach results in samples with excellent structural and optical properties. The high quality of the low temperature AlGaAs barrier is attributed to the presence of Bi on the surface as indicated by a (1 Multiplication-Sign 3) surface reconstruction persisting throughout the low temperature growth.

Fan Dongsheng; Yu Shuiqing [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Zeng Zhaoquan; Hu Xian; Dorogan, Vitaliy G.; Li Chen; Benamara, Mourad; Hawkridge, Michael E.; Mazur, Yuriy I.; Salamo, Gregory J. [Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Johnson, Shane R. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-6206 (United States); Wang, Zhiming M. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

2012-10-29T23:59:59.000Z

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

DOE Green Energy (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

122

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells  

E-Print Network (OSTI)

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells I. Friel, C online 20 June 2005 An ultraviolet electroabsorption modulator based on AlGaN/GaN quantum wells is demonstrated. Enhanced excitonic absorption in the quantum wells at around 3.48 eV was achieved using

Moustakas, Theodore

123

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

124

Building Technologies Office: Residential Energy Efficiency Stakeholde...  

NLE Websites -- All DOE Office Websites (Extended Search)

Stakeholder's Meeting - Spring 2011 The U.S. Department of Energy (DOE) Building America program held the Residential Energy Efficiency Stakeholder's Meeting in Atlanta, Georgia,...

125

Second annual clean coal technology conference: Proceedings. Volume 1  

Science Conference Proceedings (OSTI)

The Second Annual Clean Coal Technology Conference was held at Atlanta, Georgia, September 7--9, 1993. The Conference, cosponsored by the US Department of Energy (USDOE) and the Southern States Energy Board (SSEB), seeks to examine the status and role of the Clean Coal Technology Demonstration Program (CCTDP) and its projects. The Program is reviewed within the larger context of environmental needs, sustained economic growth, world markets, user performance requirements and supplier commercialization activities. This will be accomplished through in-depth review and discussion of factors affecting domestic and international markets for clean coal technology, the environmental considerations in commercial deployment, the current status of projects, and the timing and effectiveness of transfer of data from these projects to potential users, suppliers, financing entities, regulators, the interested environmental community and the public. Individual papers have been entered separately.

Not Available

1993-09-09T23:59:59.000Z

126

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

Science Conference Proceedings (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

127

Development of polycrystal GaAs solar cells. Quarterly technical progress report No. 1, January 15-April 30, 1979  

DOE Green Energy (OSTI)

The objective of this program is to develop a thin film GaAs solar cell technology with the potential of yielding cells with 12 to 15% efficiency and to develop thin film growth techniques which are compatible with the low cost production goal of $500/kW-peak. Progress is reported on a study of junction formation in large grain polycrystal GaAs; characterization of the electronic properties of polycrystal GaAs grown by MBE on low cost foreign substrates; optimizing the structure of AlGaAs-GaAs heterojunction Schottky barrier solar cells; and a variety of grain boundary measurements, including Scanning Light Microscopy (SLM), Deep Level Transient Spectroscopy (DLTS), SIMS, and temperature dependent resistivity.

Miller, D.L.; Cohen, M.J.; Harris, J.S. Jr.; Ballantyne, J.; Hoyte, A.; Stefanakos, E.

1979-05-01T23:59:59.000Z

128

ENGINEERING TECHNOLOGY Engineering Technology  

E-Print Network (OSTI)

, Mechatronics Technology, and Renewable Energy Technology. Career Opportunities Graduates of four origin, gender, age, marital status, sexual orientation, status as a Vietnam-era veteran, or disability

129

Technology Transfer: Available Technologies  

Please refer to the list of technologies below for licensing and research collaboration availability. If you can't find the technology you ...

130

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures  

Science Conference Proceedings (OSTI)

Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

2012-12-24T23:59:59.000Z

131

A GaAs transceiver chip for optical data transmission  

SciTech Connect

The present article describes a transceiver VLSI chip for optical data transmission, at 1 Gbit/s (1.4 Gbit/s in selected production), made in GaAs technology. The transceiver makes the parallel-to-serial and serial-to-parallel conversion as well as the encoding and decoding of 32 bit data words. The circuit operates in a completely asynchronous mode, allowing the possibility of switching on-off the transmission in few nsec and of using the transceiver not only in point-to-point topologies, but also in flooding topologies (i.e. star connections). The radiation hardness and the relatively low power consumption, respect to TTL, of the GaAs, extend the use of the chip to a large number of applications in present and future high energy physics experimental apparatus.

Mirabelli, G.; Petrolo, E.; Valente, E. (Ist. Nazionale di Fisica Nucleare, Roma (Italy)); Cardarelli, R.; Santonico, R. (Sezione di Roma 2 and Univ. di Roma (Italy). Ist. Nazionale di Fisica Nucleare); Ferrer, M.L. (Lab. Nazionali di Frascati (Italy). Ist. Nazionale di Fisica Nucleare)

1993-08-01T23:59:59.000Z

132

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents (OSTI)

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

133

Growth and development of GaInAsP for use in high-efficiency solar cells. Final subcontract report, 1 July 1991--30 December 1993  

DOE Green Energy (OSTI)

This report describes accomplishments during Phase 3 of this subcontract. The overall goals of the subcontract were (1) to develop the necessary technology to grow high-efficiency GaInAsP layers that are lattice-matched to GaAs and Ge; (2) to demonstrate highefficiency GaInAsP single-junction solar cells; and (3) to demonstrate GaInAsP/Ge cascade solar cells suitable for operation under concentrated (500X) sunlight. The major accomplishments during Phase 3 include (1) demonstrating a GaInAsP tunnel diode for use as an interconnect in the GaInAsP/Ge cascade cell, and (2) demonstrating a GaInAsP/Ge cascade cell. The development of the GaInAsP tunnel diode is a major accomplishment because it allows for the GaInAsP and Ge cells to be connected without optical losses for the bottom Ge cell, such as a Ge tunnel diode would cause. The GaInAsP/Ge cascade cell development is significant because of the demonstration of a cascade cell with a new materials system.

Sharps, P.R. [Research Triangle Inst., Research Triangle Park, NC (United States)

1994-10-01T23:59:59.000Z

134

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

135

Advanced Integrated Systems Technology Development  

E-Print Network (OSTI)

and Atlanta. For each climate zone studied, a single-floorRefrigerating and Air Conditioning Engineers climate zone.The cities and respective climate zones are Miami (1A),

2013-01-01T23:59:59.000Z

136

Development of a Residential Integrated Ventilation Controller  

E-Print Network (OSTI)

Refrigerating, and Air-Conditioning Engineers, Atlanta, GA.Refrigerating, and Air-Conditioning Engineers, Atlanta, GA.of Ventilation and Air Conditioning: Is CERN up to Date With

Walker, Iain

2013-01-01T23:59:59.000Z

137

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells  

E-Print Network (OSTI)

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells Shunfeng Li Cubic InGaN/GaN multi-quantum-wells MQWs with high structural and optical quality are achieved by utilizing freestanding 3C-SiC 001 substrates and optimizing InGaN quantum well growth. Superlattice peaks up

As, Donat Josef

138

passivation of InGaN/GaN nanopillar light emitting diodes.  

E-Print Network (OSTI)

??Recently, InGaN/GaN based blue light emitting diodes (LEDs) have become widely available commercially, but their efficiency is reduced due to the quantum confined Stark effect (more)

Choi, Won

2013-01-01T23:59:59.000Z

139

Detailed Analysis of Temperature Characteristics of InGaP/InGaAs ...  

Science Conference Proceedings (OSTI)

The current-voltage (I-V) characteristics of single-junction solar cells (InGaP, InGaAs, Ge solar cells) were measured at various temperatures. The structures of ...

140

AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy  

SciTech Connect

The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

C.A. Wang; C.J. Vineis; D.R. Calawa

2002-02-13T23:59:59.000Z

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141

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw compressors, 30-90 kW / 40-125 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

142

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors ...  

U.S. Energy Information Administration (EIA)

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors, 11-30 kW / 15-40 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

143

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw compressors, 90-160 kW / 125-200 hp.,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading ...

144

Empower Energy Technology | Open Energy Information  

Open Energy Info (EERE)

Empower Energy Technology Empower Energy Technology Jump to: navigation, search Logo: Empower Energy Technology Name Empower Energy Technology Address 245 N. Highland Avenue, Suite 230.162 Place Atlanta, Georgia Zip 30307 Sector Solar Year founded 2007 Number of employees 1-10 Phone number 4046813270 Website http://www.empoweret.com Coordinates 33.761667°, -84.359808° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.761667,"lon":-84.359808,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

145

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT  

Science Conference Proceedings (OSTI)

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

Lenka, T. R., E-mail: trlenka@gmail.com; Panda, A. K., E-mail: akpanda62@hotmail.com [National Institute of Science and Technology, Palur Hills (India)

2011-05-15T23:59:59.000Z

146

Technology Search  

home \\ technologies \\ search. Technologies: Ready-to-Sign Licenses: Software: Patents: Technology Search. ... Operated by Lawrence Livermore National Security, LLC, ...

147

Acceleration methods for image super-resolution  

E-Print Network (OSTI)

, Atlanta, GA, USA (2000) 43­49 18. Franchi, D., Belardinelli, A., Palagi, G., Ripoli, A., Bedini, R.: New

Cooperstock, Jeremy R.

148

Infiltration Effects on Residential Pollutant Concentrations for Continuous and Intermittent Mechanical Ventilation Approaches  

E-Print Network (OSTI)

2009). 2009 ASHRAE Handbook - Fundamentals. Atlanta, GA.the ASHRAE (2009) Handbook of Fundamentals, a mass balance

Sherman, Max

2010-01-01T23:59:59.000Z

149

Dietary Supplement Laboratory Quality Assurance Program  

Science Conference Proceedings (OSTI)

... MD Food and Drug Administration, Atlanta, GA Food and ... Wheatridge, CO Medallion Laboratories, Minneapolis, MN Natural Factors Nutritional ...

2013-09-24T23:59:59.000Z

150

Y2, Threading Defect Elimination in GaN Nanostructures  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

151

Quantized states in homogenous polarized GaInN GaN quantum wells  

E-Print Network (OSTI)

Quantized states in homogenous polarized GaInN GaN quantum wells C. Wetzel1, S. Kamiyama1, H. Amano wells is calculated in a single particle model. The act- ing electric eld in the wells and the band gap-dimensional well layers our approach is based on induction from results obtained at the binary GaN barri- ers

Wetzel, Christian M.

152

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS  

E-Print Network (OSTI)

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS C. Wetzel, T. Takeuchi, H. Amano, and IInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across

Wetzel, Christian M.

153

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells  

E-Print Network (OSTI)

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells Marcus Eickhoff* and Dieter Suter, nanometer-sized quantum wells possible with excellent sensitivity and selectivity while avoiding.60.-k; 78.55.Cr; 78.67.De Keywords: ODNMR; Pulsed excitation; Quantum well; GaAs 1. Introduction Nuclear

Suter, Dieter

154

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network (OSTI)

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Recanati, Catherine

155

International Truck | Open Energy Information  

Open Energy Info (EERE)

Truck Truck Jump to: navigation, search Name International Truck Place Atlanta, GA Website http://www.internationaltruck. References International Truck[1] Information About Partnership with NREL Partnership with NREL Yes Partnership Type Other Relationship Partnering Center within NREL Transportation Technologies and Systems Partnership Year 2007 LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! International Truck is a company located in Atlanta, GA. References ↑ "International Truck" Retrieved from "http://en.openei.org/w/index.php?title=International_Truck&oldid=381698" Categories: Clean Energy Organizations Companies Organizations What links here Related changes Special pages Printable version Permanent link

156

Building Technologies Office: Emerging Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Emerging Technologies Emerging Technologies Printable Version Share this resource Send a link to Building Technologies Office: Emerging Technologies to someone by E-mail Share Building Technologies Office: Emerging Technologies on Facebook Tweet about Building Technologies Office: Emerging Technologies on Twitter Bookmark Building Technologies Office: Emerging Technologies on Google Bookmark Building Technologies Office: Emerging Technologies on Delicious Rank Building Technologies Office: Emerging Technologies on Digg Find More places to share Building Technologies Office: Emerging Technologies on AddThis.com... About Take Action to Save Energy Partner with DOE Activities Technology Research, Standards, & Codes Popular Links Success Stories Previous Next Lighten Energy Loads with System Design.

157

Princeton Plasma Physics Lab - General Atomics (GA)  

NLE Websites -- All DOE Office Websites (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
158

TMS P&GA Wired to Washington  

Science Conference Proceedings (OSTI)

P & GA COMMITTEE HOME ... the connection between MSE and such key U.S. initiatives as national security, energy independence, and economic growth.

159

Price of Elba Island, GA Liquefied Natural Gas Total Imports...  

Annual Energy Outlook 2012 (EIA)

Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet) Price of Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet)...

160

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

DOE Green Energy (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Technology Capabilities  

NLE Websites -- All DOE Office Websites (Extended Search)

Homeland Security & Defense Homeland Security & Defense Information Technology & Communications Information Technology & Communications Sensors, Electronics &...

162

Spin-Resolved Electronic Structure of Ultrathin Epitaxial Fe Films on Vicinal and Singular GaAs(100) Substrates  

SciTech Connect

Recently there has been considerable interest in the study of spin injection at ferromagnetic semiconductor heterojunctions and ferromagnetic metal--semiconductor contacts. Studies of ntype semiconductors have demonstrated spin-coherent transport over large distances5 and the persistence of spin coherence over a sizeable time scale. Clearly such investigations have been stimulated by the potential of the development of ''spintronics'', electronic devices utilizing the information of the electron spin states. To understand and improve the magnetic properties of ultrathin Fe films on GaAs has been the aim of many research groups over recent years. The interest in this system has both technological and fundamental scientific motivations. Technologically, Fe on GaAs may serve to realize spin electronic devices. From a fundamental science point of view, Fe on GaAs serves as a prototype for studies of the interplay between the crystalline structure and morphology of an ultrathin film, its electronic structure and the long range magnetic order it exhibits. Furthermore, it is well known that an oxidized Cs layer on GaAs substantially alters the work-function of the GaAs surface, which plays a very important role in the application of GaAs as a spin polarized electron source.

Morton, S A; Waddill, G D; Spangenberg, M; Seddon, E A; Neal, J; Shen, T; Tobin, J G

2003-03-10T23:59:59.000Z

163

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

164

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

165

Energy Efficient Commercial Technologies  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Commercial Technologies April 11th, 2012 Presented by: Warren Willits Energy Solutions Center (202) 824-7150 www.ESCenter.org Federal Utility Partnership Working Group Spring 2012 Jekyll Island, GA Todays Energy Efficient Technologies  Water Heating  Heating  Air Conditioning  Humidity Control  CHP / Cogeneration Atmospheric Direct Vent High Efficiency .7 EF Atmospheric water heaters now available 97 % efficient tank water heaters now available Traditional Tank Style Water Heating  Tankless Water Heaters  EF = .82 Standard Unit  EF = .97 Condensing  Solar Water Heaters  With H.E. gas back up systems Newer Water Heaters Water Heater Life Cycle Cost Life Cycle Costs Electric Tank Water Heater Gas Water Heater

166

Epitaxial Growth of GaN-based LEDs on Simple Sacrificial Substrates  

SciTech Connect

The objective of this project is to produce alternative substrate technologies for GaN-based LEDs by developing an ALD interlayer of Al{sub 2}O{sub 3} on sacrificial substrates such as ZnO and Si. A sacrificial substrate is used for device growth that can easily be removed using a wet chemical etchant leaving only the thin GaN epi-layer. After substrate removal, the GaN LED chip can then be mounted in several different ways to a metal heat sink/reflector and light extraction techniques can then be applied to the chip and compared for performance. Success in this work will lead to high efficiency LED devices with a simple low cost fabrication method and high product yield as stated by DOE goals for its solid state lighting portfolio.

Ian Ferguson; Chris Summers

2009-12-31T23:59:59.000Z

167

Energy-Aware Opcode Design Balaji V. Iyer #1  

E-Print Network (OSTI)

on different issue-width processors. I. MOTIVATION Embedded devices are required to perform several complex * Department of Electrical & Computer Engineering Georgia Institute of Technology, Atlanta, GA North Carolina requires these devices to use batteries as primary source for energy [1] [4] [11] [18]. One solution

Conte, Thomas M.

168

AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE  

SciTech Connect

An AlGaAs/GaAs resonant tunneling diode (RTD) with submicron size was fabricated on {l_brace}111{r_brace} oblique facets of GaAs with selective MBE. The method is based on the fact that a certain facet structure is formed on a patterned substrate in selective MBE because the growth rate depends strongly on the facet structure. The fabrication of a double-barrier structure was attempted on a {l_brace}111{r_brace}B facet. The current-voltage characteristics of the sample showed negative differential resistance at 77K demonstrating that we have achieved an RTD on a submicron facet.

Nishiwaki, T.; Yamaguchi, M.; Sawaki, N. [Department of Electronics, Nagoya University, Chikusa-ku, Nagoya, 464-8603 (Japan)

2007-04-10T23:59:59.000Z

169

Vendor / Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

Brake Assessment Tools Commercial Motor Vehicle Roadside Technology Corridor Safety Technology Showcase October 14, 2010 Commercial Motor Vehicle Roadside Technology Corridor...

170

Vendor / Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

Brake-Related Research Commercial Motor Vehicle Roadside Technology Corridor Safety Technology Showcase October 14, 2010 Commercial Motor Vehicle Roadside Technology Corridor...

171

Faience Technology  

E-Print Network (OSTI)

by Joanne Hodges. Faience Technology, Nicholson, UEE 2009Egyptian materials and technology, ed. Paul T. Nicholson,Nicholson, 2009, Faience Technology. UEE. Full Citation:

Nicholson, Paul

2009-01-01T23:59:59.000Z

172

Accelerated aging of GaAs concentrator solar cells  

DOE Green Energy (OSTI)

An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

Gregory, P.E.

1982-04-01T23:59:59.000Z

173

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence  

E-Print Network (OSTI)

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence October 1997; accepted for publication 5 January 1998 Recombination in single quantum well and multiquantum well InGaN/GaN structures is studied using time-resolved photoluminescence and pulsed

Bowers, John

174

Optical injection and coherent control of a ballistic charge current in GaAsAlGaAs quantum wells  

E-Print Network (OSTI)

Optical injection and coherent control of a ballistic charge current in GaAs?AlGaAs quantum wells of Hache´ et al.,2,3 but in this article we report injection into the plane of GaAs/AlGaAs quantum wells specific to quantum wells. Although we expect the underlying physics of injection and control of currents

Sipe,J. E.

175

Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

( gate=nickel)/(barrier=GaN/Al (y) Ga (1?y) N)/(buffer=GaN)/(substrate=SiC ) polarizationinduced high electron mobility transistors (PI-HEMTs) show promise for ultrahigh power microwave amplification. The polarization fields in these Ga-face

Lester F. Eastman

1999-01-01T23:59:59.000Z

176

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network (OSTI)

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

177

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures  

E-Print Network (OSTI)

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode and GaInN/GaN heterostructures typically used for high efficiency light emitting diodes is of high materials for green, blue, and UV light emitting diodes (LED) [1-2]. It is known that huge piezoelectric

Wetzel, Christian M.

178

ga_50m_wind  

NLE Websites -- All DOE Office Websites (Extended Search)

DataTechnologySpecificUnitedStatesWindHighResolutionGeorgiaWindHighResolution.zip> Description: Abstract: Annual average wind resource potential for the state of Georgia...

179

AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics  

Science Conference Proceedings (OSTI)

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO"2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium lamp ... Keywords: GaN, HEMT, MQW, Photo-chemical vapor deposition, SiO 2

Kai-Hsuan Lee; Ping-Chuan Chang; Shoou-Jinn Chang

2013-04-01T23:59:59.000Z

180

Solid-State Lighting Issue 11: Selected Business & Technology News  

NLE Websites -- All DOE Office Websites (Extended Search)

1: BUSINESS AND TECHNOLOGY NEWS 1: BUSINESS AND TECHNOLOGY NEWS (Mid-October 2001 to early February 2002) A selection of news appears in this section. Where possible, links to full-text articles and press releases have been included in the abstracts. Click on the links in the table below to go directly to the abstract. Table of Contents: Business and Technology News · Arima Optoelectronics will expand ultra-high-brightness LED production. · AXT producing brighter AlInGaN HB-LEDs; company expanding fab facilities in China. · BMDO changing its name to the Missile Defense Agency (MDA). · Brown University/Agilent/Lumileds researchers create a monolithic dual-wavelength InGaN LED. · Cermet receives BMDO contracts to develop bulk GaN substrate and GaN FET technology.

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
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to obtain the most current and comprehensive results.


181

Technology Transfer: Available Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

test test Please refer to the list of technologies below for licensing and research collaboration availability. If you can't find the technology you're interested in, please contact us at TTD@lbl.gov. Energy ENERGY EFFICIENT TECHNOLOGIES Aerosol Sealing Aerosol Remote Sealing System Clog-free Atomizing and Spray Drying Nozzle Air-stable Nanomaterials for Efficient OLEDs Solvent Processed Nanotube Composites OLEDS with Air-stable Structured Electrodes APIs for Online Energy Saving Tools: Home Energy Saver and EnergyIQ Carbon Dioxide Capture at a Reduced Cost Dynamic Solar Glare Blocking System Electrochromic Device Controlled by Sunlight Electrochromic Windows with Multiple-Cavity Optical Bandpass Filter Electrochromic Window Technology Portfolio Universal Electrochromic Smart Window Coating

182

J1, MBE Growth of Metamorphic InGaP on GaAs and GaP for Wide ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

183

Technology Search Results | Brookhaven Technology ...  

There are no technology records available that match the search query. Find a Technology. Search our technologies by categories or by keywords.

184

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

185

Free carrier accumulation at cubic AlGaN/GaN heterojunctions  

Science Conference Proceedings (OSTI)

Cubic Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructures were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. A profile of the electrostatic potential across the cubic-AlGaN/GaN heterojunction was obtained using electron holography in the transmission electron microscope. The experimental potential profile indicates that the unintentionally doped layers show n-type behavior and accumulation of free electrons at the interface with a density of 5.1 x 10{sup 11}/cm{sup 2}, about one order of magnitude less than in wurtzite AlGaN/GaN junctions. A combination of electron holography and cathodoluminescence measurements yields a conduction-to-valence band offset ratio of 5:1 for the cubic AlGaN/GaN interface, which also promotes the electron accumulation. Band diagram simulations show that the donor states in the AlGaN layer provide the positive charges that to a great extent balance the two-dimensional electron gas.

Wei, Q. Y.; Li, T.; Huang, J. Y.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Tschumak, E.; Zado, A.; As, D. J. [Department of Physics, Universitaet Paderborn, D-33098 Paderborn (Germany)

2012-04-02T23:59:59.000Z

186

L1, Formation of Structural Defects in AlGaN/GaN High Electron ...  

Science Conference Proceedings (OSTI)

Transmission electron microscope (TEM) cross sectional image has shown that electrical degradation is closely related to structural damage in the GaN cap and ...

187

Plasma Damage in p-GaN  

SciTech Connect

The effect of Inductively Coupled Plasma H{sub 2} or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400-550{angstrom}. At high ion fluxes or energies there can be type conversion of the initially p-GaN surface. Post etch annealing at 900 C restores the initial conductivity.

Cao, X.A.; Dang, G.T.; Hickman, R.A.; Pearton, S.J.; Ren, F.; Shul, R.J.; Van Hove, J.M.; Zhang, A.P.; Zhang, L.

1999-06-30T23:59:59.000Z

188

GaTe semiconductor for radiation detection  

SciTech Connect

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

189

Technology Search Results | Brookhaven Technology ...  

BSA 08-04: High Temperature Interfacial Superconductivity; Find a Technology. Search our technologies by categories or by keywords. Search ...

190

Technology Search Results | Brookhaven Technology ...  

Staff Directory; BNL People Technology Commercialization & Partnerships. Home; For BNL Inventors; ... a nonprofit applied science and technology organization. ...

191

Technology Search Results | Brookhaven Technology ...  

Non-Noble Metal Water Electrolysis Catalysts; Find a Technology. Search our technologies by categories or by keywords. Search ...

192

Technology Search Results | Brookhaven Technology ...  

Receive Technology Updates. Get email notifications about new or improved technologies in your area of interest. Subscribe

193

Technology Transfer: Available Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Please refer to the list of technologies below for licensing and research Please refer to the list of technologies below for licensing and research collaboration availability. If you can't find the technology you're interested in, please contact us at TTD@lbl.gov. Biotechnology and Medicine DIAGNOSTICS AND THERAPEUTICS CANCER CANCER PROGNOSTICS 14-3-3 Sigma as a Biomarker of Basal Breast Cancer ANXA9: A Therapeutic Target and Predictive Marker for Early Detection of Aggressive Breast Cancer Biomarkers for Predicting Breast Cancer Patient Response to PARP Inhibitors Breast Cancer Recurrence Risk Analysis Using Selected Gene Expression Comprehensive Prognostic Markers and Therapeutic Targets for Drug-Resistant Breast Cancers Diagnostic Test to Personalize Therapy Using Platinum-based Anticancer Drugs Early Detection of Metastatic Cancer Progenitor Cells

194

Heavy ion and proton analysis of a GaAs C-HIGFET SCRAM  

Science Conference Proceedings (OSTI)

The authors present heavy ion and proton upset measurements, including total dose, and displacement damage on a one micron, GaAs, complementary-heterostructure insulated-gate FET (C-HIGFET) 1k x 1 SRAM. SEU characteristics show a two order of magnitude improvement over GaAs MESFET technology. Heavy-ion upset equilibrium measurements show that all cells upset with equal probability at the five percent LET threshold. This indicates that for this device the shape of the cross section versus LET curve is a result of a probability distribution that applies to all cells and is not the result of variations in cell sensitivities. The data set also indicates that the traditional two-dimensional cos([theta]) normalization to LET and fluence are not applicable to this technology.

Cutchin, J.H.; Marshall, P.W.; Weatherford, T.R. (SFA Inc., Landover, MD (United States) Naval Research Lab., Washington, DC (United States)); Langworthy, J.; Petersen, E.L.; Campbell, A.B. (Naval Research Lab., Washington, DC (United States)); Hanka, S.; Peczalski, A. (Honeywell, Inc., Minneapolis, MN (United States))

1993-12-01T23:59:59.000Z

195

Technology Transfer: Available Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Software and Information Technologies Software and Information Technologies Algorithm for Correcting Detector Nonlinearites Chatelet: More Accurate Modeling for Oil, Gas or Geothermal Well Production Collective Memory Transfers for Multi-Core Processors Energy Efficiency Software EnergyPlus:Energy Simulation Software for Buildings Tools, Guides and Software to Support the Design and Operation of Energy Efficient Buildings Flexible Bandwidth Reservations for Data Transfer Genomic and Proteomic Software LABELIT - Software for Macromolecular Diffraction Data Processing PHENIX - Software for Computational Crystallography Vista/AVID: Visualization and Allignment Software for Comparative Genomics Geophysical Software Accurate Identification, Imaging, and Monitoring of Fluid Saturated Underground Reservoirs

196

Superlattice-like stacking fault array in ion-irradiated GaN  

SciTech Connect

Controlling defects in crystalline solids is of technological importance for realizing desirable materials properties. Irradiation with energetic particles is useful for designing the spatial distribution and concentration of defects in materials. Here, we performed ion irradiation into hexagonal GaN with the wurtzite structure and demonstrated the spontaneous formation of superlattice-like stacking fault arrays. It was found that the modulation period can be controlled by irradiation conditions and post-irradiation heat treatments.

Ishimaru, Dr. Manabu [Osaka University; Usov, Igor Olegovich [ORNL; Zhang, Yanwen [ORNL; Weber, William J [ORNL

2012-01-01T23:59:59.000Z

197

Simulation and Design Analysis of (A1Ga)As/GaAs MODFET Integrated Circuits  

Science Conference Proceedings (OSTI)

A new (AlGa)As/GaAs MODFET integrated circuit simulator is described. Our simulator is a customized version of SPICE incorporating the extended charge control model for MODFET's and the velocity saturation model for ungated FET's used as the load devices. ...

Choong H. Hyun; M. S. Shur; N. C. Cirillo

2006-11-01T23:59:59.000Z

198

Two-dimensional electron gas in AlGaN/GaN heterostructures  

Science Conference Proceedings (OSTI)

The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. {copyright} {ital 1997 American Vacuum Society.}

Li, J.Z.; Lin, J.Y.; Jiang, H.X. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Khan, M.A.; Chen, Q. [APA Optics, Inc., Blaine, Minnesota 55449 (United States)] [APA Optics, Inc., Blaine, Minnesota 55449 (United States)

1997-07-01T23:59:59.000Z

199

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

DOE Green Energy (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

200

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED  

Science Conference Proceedings (OSTI)

We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm{sup 2}V{sup -1}s{sup -1} at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth. This paper gives a compact overview of the experimental key aspects that significantly affect the low temperature electron mobility in AlGaN/GaN heterostructures. Growth at the transition towards Ga droplet formation produced the best results. A quantitative analysis of the magnetoresistance confirmes scattering at dislocations as the dominant scattering process at low temperature.

Broxtermann, D.; Sivis, M.; Malindretos, J.; Rizzi, A. [IV. physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

2012-03-15T23:59:59.000Z

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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201

Technology Transfer: Available Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Ion Sources and Beam Technologies Ion Sources and Beam Technologies GENERATORS AND DETECTORS Compact, Safe and Energy Efficient Neutron Generator Fast Pulsed Neutron Generator High Energy Gamma Generator Lithium-Drifted Silicon Detector with Segmented Contacts Low Power, High Energy Gamma Ray Detector Calibration Device Nested Type Coaxial Neutron Generator Neutron and Proton Generators: Cylindrical Neutron Generator with Nested Option, IB-1764 Neutron-based System for Nondestructive Imaging, IB-1794 Mini Neutron Tube, IB-1793a Ultra-short Ion and Neutron Pulse Production, IB-1707 Mini Neutron Generator, IB-1793b Compact Spherical Neutron Generator, IB-1675 Plasma-Driven Neutron/Gamma Generators Portable, Low-cost Gamma Source for Active Interrogation ION SOURCES WITH ANTENNAS External Antenna for Ion Sources

202

Available Technologies  

The technologys subnanometer resolution is a result of superior ... Additional R&D will be required ... U.S. DEPARTMENT OF ENERGY OFFICE OF SCIENCE ...

203

Tools & Technologies  

Energy.gov (U.S. Department of Energy (DOE))

Weprovide leadership for transforming workforce development through the power of technology. It develops corporate educational technology policy and enables the use of learning tools and...

204

GaN Nanopore Arrays: Fabrication and Characterization  

E-Print Network (OSTI)

GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

Wang, Yadong

205

Vehicle Technologies Office: Vehicle Technologies Office Organization...  

NLE Websites -- All DOE Office Websites (Extended Search)

Organization and Contacts Organization Chart for the Vehicle Technologies Program Fuel Technologies and Deployment, Technology Managers Advanced Combustion Engines, Technology...

206

Fuel Cell Technologies Office: Technology Validation  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Information Technology Validation Search Search Help Technology Validation EERE Fuel Cell Technologies Office Technology Validation Printable Version Share this resource...

207

Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape ...  

Science Conference Proceedings (OSTI)

... Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape Memory Alloys. Peng Zhao (Dept. of Materials Science and ...

208

Chemistry - Technology Transfer: Available Technologies  

Please refer to the list of technologies below for licensing and research collaboration availability. If you can't find the technology you ...

209

Technology Analysis - Heavy Vehicle Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

the GPRA benefits estimates for EERE's Vehicle Technologies Program's heavy vehicle technology research activities. Argonne researchers develop the benefits analysis using four...

210

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

211

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

We have investigated the surface morphology of electrically stressed AlGaN/GaN high electron mobility transistors using atomic force microscopy and scanning electron microscopy after removing the gate metallization by ...

Makaram, Prashanth

212

Available Technologies  

Energy Storage and Recovery; Renewable Energy; Environmental Technologies. Monitoring and Imaging; Remediation; Modeling; Imaging & Lasers.

213

Available Technologies  

APPLICATIONS OF TECHNOLOGY: Thermal management for: microelectronic devices; solar cells and solar energy management systems ; refrigerators

214

GaAs photoconductive semiconductor switch  

DOE Patents (OSTI)

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

215

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network (OSTI)

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

216

Energy Analysis Department Supporting Photovoltaics in Market-Rate  

E-Print Network (OSTI)

Inspector, Atlanta Gas-Light Company, Atlanta, GA 4.0 HONORS AND AWARDS 2008 Harpole Professor of Electrical under High Penetration of Variable Generation," US Department of Energy office of Electricity Delivery

217

Fuel Cell Technologies Office: Technology Validation  

NLE Websites -- All DOE Office Websites (Extended Search)

Fuel Cell Technologies Office: Technology Validation to someone by E-mail Share Fuel Cell Technologies Office: Technology Validation on Facebook Tweet about Fuel Cell Technologies...

218

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

Fainman, "Influence of chlorine on etched sidewalls inFainman, Influence of chlorine on etched sidewalls inthe RIBE of GaAs with chlorine (Cl 2 ), ion beam sputtering

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

219

K1, Molecular Beam Epitaxy of Catalyst-Free InGaN/GaN Nanowires ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

220

JJ2, Optical Polarization of Non-Polar GaInN/GaN LEDs  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes  

E-Print Network (OSTI)

We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

Cornelius S. Bausch; Aune Koitme; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

2013-05-06T23:59:59.000Z

222

Recent progress in InGaAsSb/GaSb TPV devices  

DOE Green Energy (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

223

Determination of porosity of lignocellulosic biomass before and after pretreatment by using Simons⠒ stain and NMR techniques  

NLE Websites -- All DOE Office Websites (Extended Search)

porosity porosity of lignocellulosic biomass before and after pretreatment by using Simons' stain and NMR techniques Xianzhi Meng a , Marcus Foston a,1 , Johannes Leisen b , Jaclyn DeMartini c , Charles E. Wyman c , Arthur J. Ragauskas a,⇑ a BioEnergy Science Center, School of Chemistry and Biochemistry, Institute of Paper Science and Technology, Georgia Institute of Technology, 500 10th Street, Atlanta, GA 30332, USA b School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, GA 30332, USA c Department of Chemical & Environmental Engineering, Center for Environmental Research and Technology, University of California, Riverside, BioEnergy Science Center, Riverside, CA 92507, USA h i g h l i g h t s  Cellulose accessibility was tested by Simons' stain and multiple NMR techniques.  Pretreatment increases the pore size and overall surface area of the

224

GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP  

Science Conference Proceedings (OSTI)

We report on the epitaxial growth of an AlSb/InAs heterostructure on a (001) GaP substrate. We investigate the conditions for the most efficient relaxation of GaSb islands on GaP. In particular, we show that the GaP surface treatment and the growth temperature are crucial for the formation of a two-dimensional periodic array of 90 deg. misfit dislocations at the episubstrate interface. With this relaxation process, an AlSb/InAs heterostructure exhibiting a room temperature mobility of 25 500 cm{sup 2} V{sup -1} s{sup -1} on GaP is demonstrated. This result paves the way to the integration of Sb-based devices on Si substrates through the use of GaP/Si templates.

El Kazzi, S.; Desplanque, L.; Coinon, C.; Wallart, X. [Institut d'Electronique, de Microelectronique, et de Nanotechnologie, UMR-CNRS 8520, BP 60069, 59652 Villeneuve d'Ascq Cedex (France); Wang, Y.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Marechal Juin, 14050 Caen Cedex (France)

2010-11-08T23:59:59.000Z

225

GaNPAs Solar Cells Lattice-Matched To GaP: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

Geisz, J. F.; Friedman, D. J.; Kurtz, S.

2002-05-01T23:59:59.000Z

226

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents (OSTI)

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

227

File:USDA-CE-Production-GIFmaps-GA.pdf | Open Energy Information  

Open Energy Info (EERE)

GA.pdf GA.pdf Jump to: navigation, search File File history File usage Georgia Ethanol Plant Locations Size of this preview: 776 × 600 pixels. Full resolution ‎(1,650 × 1,275 pixels, file size: 410 KB, MIME type: application/pdf) Description Georgia Ethanol Plant Locations Sources United States Department of Agriculture Related Technologies Biomass, Biofuels, Ethanol Creation Date 2010-01-19 Extent State Countries United States UN Region Northern America States Georgia External links http://www.nass.usda.gov/Charts_and_Maps/Ethanol_Plants/ File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 16:12, 27 December 2010 Thumbnail for version as of 16:12, 27 December 2010 1,650 × 1,275 (410 KB) MapBot (Talk | contribs) Automated bot upload

228

Processing Technology  

Science Conference Proceedings (OSTI)

Aug 5, 2013... relevant polymers and hybrid nanocomposite material systems. ... technology to perform lightweight manufacturing of car components.

229

Technology Transfer  

Science Conference Proceedings (OSTI)

... get started on understanding accessibility in elections and voting technology. ... bibliography was created by the Georgia Tech Research Institute ...

2013-09-17T23:59:59.000Z

230

Technology Transfer  

A new search feature has been implemented, which allows searching of technology transfer information across the Department of Energy Laboratories.

231

Technology Strategies  

Science Conference Proceedings (OSTI)

From the Book:PrefaceTechnology as the Strategic AdvantageWhen I began writing this book I struggled with the direction I wanted it to take. Is this book to be about business, technology, or even the business of technology? I ...

Cooper Smith

2001-07-01T23:59:59.000Z

232

Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report a study on self-catalyzed GaP/GaNP core/shell nanowires (NWs) grown on Si(111) by gas-source molecular beam epitaxy. Scanning electron microscopy images show that vertical and uniform GaP NWs and GaP/GaNP core/shell NWs are grown on Si(111). The density ranges from {approx}1 x 10{sup 7} to {approx}5 x 10{sup 8} cm{sup -2} across the substrate. Typical diameters are {approx}110 nm for GaP NWs and {approx}220 nm for GaP/GaNP NWs. Room temperature photoluminescence (PL) signal from the GaP/GaNP core/shell NWs confirms that N is incorporated in the shell and the average N content is {approx}0.9%. The PL low-energy tail is significantly reduced, compared to bulk GaNP.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Li, H. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Tu, C. W. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2012-01-30T23:59:59.000Z

233

Photovoltaic concentrator technology development project. Sixth project integration meeting  

DOE Green Energy (OSTI)

Thirty-three abstracts and short papers are presented which describe the current status of research, development, and demonstration of concentrator solar cell technology. Solar concentrators discussed include the parabolic trough, linear focus Fresnel lens, point focus Fresnel lens, and the parabolic dish. Solar cells studied include silicon, GaAs, and AlGaAs. Research on multiple junction cells, combined photovoltaic/thermal collectors, back contact solar cells, and beam splitter modules is described. Concentrator solar cell demonstration programs are reported. Contractor status summaries are given for 33 US DOE concentrator solar cell contracts; a description of the project, project status, and key results to date is included. (WHK)

None

1980-10-01T23:59:59.000Z

234

bbb_206.indd  

NLE Websites -- All DOE Office Websites (Extended Search)

Correspondence to: Arthur J Ragauskas, BioEnergy Science Center, School of Chemistry and Biochemistry, Institute for Paper Correspondence to: Arthur J Ragauskas, BioEnergy Science Center, School of Chemistry and Biochemistry, Institute for Paper Science and Technology, Georgia Institute of Technology, Atlanta, GA 30332, USA. E-mail: Arthur.Ragauskas@chemistry.gatech.edu Research sponsor: Department of Energy, Bioenergy Science Center. © 2010 Society of Chemical Industry and John Wiley & Sons, Ltd Review 209 Poplar as a feedstock for biofuels: A review of compositional characteristics Poulomi Sannigrahi, Arthur J. Ragauskas,* Georgia Institute of Technology, Atlanta, GA, USA Gerald A. Tuskan, BioEnergy Science Center, Oak Ridge Laboratory, Oak Ridge ,TN, USA Received October 9, 2009; revised version received December 1, 2009; accepted December 15, 2009 Published online in Wiley InterScience (www.interscience.wiley.com); DOI: 10.1002/bbb.206;

235

Structural changes in switchgrass lignin and hemicelluloses during pretreatments by NMR analysis  

NLE Websites -- All DOE Office Websites (Extended Search)

changes changes in switchgrass lignin and hemicelluloses during pretreatments by NMR analysis Reichel Samuel a, c , Marcus Foston a, c , Nan Jiang a, c , Lenong Allison a, c , Arthur J. Ragauskas a, b, c, * a School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, GA, USA b Institute of Paper Science and Technology, Georgia Institute of Technology, Atlanta, GA, USA c BioEnergy Science Center, USA a r t i c l e i n f o Article history: Received 14 May 2011 Received in revised form 13 August 2011 Accepted 25 August 2011 Available online xxx Keywords: Switchgrass Pretreatment HSQC NMR analysis Lignin a b s t r a c t Switchgrass is currently being developed as a sustainable bio-energy crop due to its broad adaptability, high mass yield and low agricultural input. Its current conversion to biofuels is detrimentally impacted by its native recalcitrance which is typically addressed using

236

c3fb13dd06a8704143923ce0a744bf57  

NLE Websites -- All DOE Office Websites (Extended Search)

HSQC (heteronuclear single quantum coherence) 13 C- 1 H correlation spectra of whole biomass in perdeuterated pyridinium chloride-DMSO system: An effective tool for evaluating pretreatment Reichel Samuel a,c , Marcus Foston a,c , Nan Jaing a,c , Shilin Cao a , Lenong Allison a,c , Michael Studer c , Charles Wyman c , Arthur J. Ragauskas a,b,c,⇑ a School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, GA, United States b Institute of Paper Science and Technology, Georgia Institute of Technology, Atlanta, GA, United States c BioEnergy Science Center, CE-CERT and Chemical and Environmental Engineering Department, Bourns College of Engineering, University of California, Riverside, CA, United States a r t i c l e i n f o Article history: Received 5 May 2010 Received in revised form 12 April 2011 Accepted 18 April 2011 Available online 30 April 2011 Keywords:

237

U.S. Department of Energy Categorical Exclusion Determination Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

34) Georgia Institute of Technology- 34) Georgia Institute of Technology- Electric Power Generation by a Vertical-Axis Turbine Driven by an Anchored Vortex and Sustained by the Air Layer over Solar-Heated Ground Program or Fjeld Office: Advanced Research Projects Agency- Energy (ARPA-E) Location(s) (CitviCounty/State):Atlanta, GA; Austin, TX; Urbana, IL; East Hartford, CT; Golden, CO; Mesa, AZ Proposed Action Description: Funding will support efforts to develop and test a SoVgen, a novel device that generates electricity by converting the potential energy of solar- heated air near the ground to kinetic energy in a columnar vortex. Development-based project tasks and controlled testing will be carried out by Georgia Institute of Technology (Atlanta, GA) and the National Renewable Energy Laboratory (Golden, CO) in dedicated university and industrial

238

Technology '90  

Science Conference Proceedings (OSTI)

The US Department of Energy (DOE) laboratories have a long history of excellence in performing research and development in a number of areas, including the basic sciences, applied-energy technology, and weapons-related technology. Although technology transfer has always been an element of DOE and laboratory activities, it has received increasing emphasis in recent years as US industrial competitiveness has eroded and efforts have increased to better utilize the research and development resources the laboratories provide. This document, Technology '90, is the latest in a series that is intended to communicate some of the many opportunities available for US industry and universities to work with the DOE and its laboratories in the vital activity of improving technology transfer to meet national needs. Technology '90 is divided into three sections: Overview, Technologies, and Laboratories. The Overview section describes the activities and accomplishments of the DOE research and development program offices. The Technologies section provides descriptions of new technologies developed at the DOE laboratories. The Laboratories section presents information on the missions, programs, and facilities of each laboratory, along with a name and telephone number of a technology transfer contact for additional information. Separate papers were prepared for appropriate sections of this report.

Not Available

1991-01-01T23:59:59.000Z

239

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network (OSTI)

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP, or (Al,Ga)As, which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically hole-mediated ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on the Curie temperature we predict a sizable enhancement of Curie temperatures in the smaller lattice constant Ga(As,P) hosts. Mn-doped Ga(As,P) is also favorable, as compared to (Al,Ga)As, with respect to the formation of carrier and moment compensating interstitial Mn impurities. In (Ga,Mn) (As,P) we find a marked decrease of the partial concentration of these detrimental impurities with increasing P content.

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

240

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates  

E-Print Network (OSTI)

5221, 34095 Montpellier, France E-mail: pmc53@cam.ac.uk Received October 12, 2012; accepted November 22, 2012; published online May 20, 2013 This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various...

Corfdir, Pierre; Dussaigne, Amlie; Teisseyre, Henryk; Suski, Tadeusz; Grzegory, Izabella; Lefebvre, Pierre; Giraud, Etienne; Shahmohammadi, Mehran; Phillips, Richard; Ganire, Jean-Daniel; Grandjean, Nicolas; Deveaud, Benot

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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241

Building Technologies Office: Technology Research, Standards...  

NLE Websites -- All DOE Office Websites (Extended Search)

to someone by E-mail Share Building Technologies Office: Technology Research, Standards, and Codes in Emerging Technologies on Facebook Tweet about Building Technologies...

242

Growth orientation dependent photoluminescence of GaAsN alloys  

SciTech Connect

We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN epilayers on (311)A/B and (100) GaAs substrates. A long room-temperature (RT) PL lifetime, as well as an enhanced N incorporation, is observed in (311)B GaAsN epilayers as compared with (311)A and (100) samples. There is no direct correlation between the RT PL lifetime and the emission intensity from Ga vacancy complex detected at low temperature. The lifetime damage coefficient is relatively low for (311)B GaAsN. The irradiation-induced nonradiative recombination defects are suggested to be N- and/or As-related according to a geometrical analysis based on the tetrahedral coordination of GaAsN crystal.

Han, Xiuxun; Tanaka, Tomohiro; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan); Sato, Shinichiro [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

2012-01-16T23:59:59.000Z

243

Available Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

6 News Stories (and older) 6 News Stories (and older) 12.21.2005___________________________________________________________________ Genzyme acquires gene therapy technology invented at Berkeley Lab. Read more here. 07.19.2005 _________________________________________________________________ Symyx, a start up company using Berkeley Lab combinatorial chemistry technology licensed by the Technology Transfer Department and developed by Peter Schultz and colleagues in the Materials Sciences Division, will be honored with Frost & Sullivan's 2005 Technology Leadership Award at their Excellence in Emerging Technologies Awards Banquet for developing enabling technologies and methods to aid better, faster and more efficient R&D. Read more here. 07.11.2005 _________________________________________________________________ Nanosys, Inc., a Berkeley Lab startup, is among the solar nanotech companies investors along Sand Hill Road in Menlo Park hope that thinking small will translate into big profits. Read more here.

244

WORKING PAPER SERIESFEDERAL RESERVE BANK of ATLANTA WORKING PAPER SERIES Crude Substitution: The Cyclical Dynamics of Oil Prices and the Skill Premium  

E-Print Network (OSTI)

Abstract: Higher oil-price shocks benefit unskilled workers relative to skilled workers: At the businesscycle frequency, energy prices and the skill premia display a strong, negative correlation. We assess the robustness of this negative correlation using several methods and data sources, including sector-level data. We find that the negative correlation is robust to different de-trending procedures, and the wages of unskilled workers in energy-intensive industries have a larger positive correlation with oil prices. We also estimate the parameters of an aggregate technology, which uses, among other inputs, energy and heterogeneous skills. We find that both capital-skill and capital-energy complementarity are responsible for this correlation pattern. As energy prices rise, the use of capital decreases and the demand for unskilled labor relative to skilled labor increases, resulting in lower skill premia. JEL classification: E24, E32, J24 Key words: skill heterogeneity, energy prices, business cycles, capital-skill complementarity

Linnea Polgreen; Pedro Silos; Linnea Polgreen; Pedro Silos; Nir Jaimovich; Karsten Jeske; Jim Nason; B. Ravikumar; Vctor Ros-rull; Ellis Tallman; Robert Tamura

2008-01-01T23:59:59.000Z

245

Radiation Hard AlGaN Detectors and Imager  

Science Conference Proceedings (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

246

NETL: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

projects are designed to: enhance domestic oil and natural gas supplies through advanced exploration and production technology; examine water related concerns; investigate...

247

Technology Update  

Science Conference Proceedings (OSTI)

A Novel Solvent Extraction Process With Bottom Gas Injection for Liquid Waste ... Membrane Technology for Treatment of Wastes Containing Dissolved Metals:...

248

Microwave Technology  

Science Conference Proceedings (OSTI)

Oct 20, 2011 ... These wastes are found in the market. ... Cherian1; Michael Kirksey1; Sandwip Dey2; 1Spheric Technologies Inc; 2Arizona State University

249

Transmission Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

electronically (shift-by-wire) and performed by a hydraulic system or electric motor. In addition, technologies can be employed to make the shifting process smoother than...

250

Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

1998-10-14T23:59:59.000Z

251

Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor  

SciTech Connect

A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (~4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (~90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors in the base, and current gains of ~10 were obtained at 300 degree C.

Abernathy, C.R.; Baca, A.G.; Cao, X.A.; Cho, H.; Dang, G.T.; Donovan, S.M.; Han, J.; Jung, K.B.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Wilson, R.G.; Zhang, A.P.; Zhang, L

1999-03-16T23:59:59.000Z

252

A InGaN/GaN quantum dot green ({lambda}=524 nm) laser  

SciTech Connect

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab [Department of Electrical Engineering and Computer Science, Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2011-05-30T23:59:59.000Z

253

Evaluation of defects and degradation in GaAs-GaAlAs wafers using transmission cathodoluminescence  

Science Conference Proceedings (OSTI)

A large number of GaAs substrates GaAlAs double-heterostructure (DH) wafers, and high-radiance GaAlAs DH light-emitting diodes (LEDS) were evaluated using transmission cathodoluminescence (TCL). We show that only epitaxial wafers with a high defect density as revealed by TCL readily develop dark line defects (DLDs) with current injection, optical excitation, or electron beam excitation. Furthermore, in agreement with the previous work, the electron-beam-induced DLDs originate at dislocations and their growth requires minority-carrier injection. Based on these results, it is inferred that TCL can serve as a nondestructive screening technique for the selection of materials that produces a high yield of reliable LEDs.

Chin, A.K.; Keramidas, V.G.; Johnston, W.D. Jr.; Mahajan, S.; Roccasecca, D.D.

1980-02-01T23:59:59.000Z

254

GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization  

DOE Green Energy (OSTI)

Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. The GaInSb layers were grown by organometallic vapor phase epitaxy (OMVPE) and the InGaAsSb lattice-matched layers were grown by liquid phase epitaxy (LPE). Device fabrication steps include unannealed p-type ohmic contacts, annealed Sn/Au n-type ohmic contacts, and a thick Ag top-surface contact using a lift-off process. Devices are characterized primarily by dark I-V, photo I-V, and quantum efficiency measurements, which are correlated to microscopic and macroscopic material properties. Particular emphasis has been on material enhancements to increase quantum efficiency and decrease dark saturation current density. TPV device performance is presently limited by the base diffusion length, typically 1 to 2 microns.

Hitchcock, C.; Gutmann, R.; Borrego, J.; Ehsani, H.; Bhat, I. [Rensselaer Polytechnic Inst., Troy, NY (United States); Freeman, M.; Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

255

Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells  

Science Conference Proceedings (OSTI)

The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

Baidus, N. V. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Vainberg, V. V. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine); Zvonkov, B. N. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Pylypchuk, A. S., E-mail: pylypchuk@iop.kiev.ua; Poroshin, V. N.; Sarbey, O. G. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine)

2012-05-15T23:59:59.000Z

256

P8, Fabrication of Subwavelength Pillar Arrays on GaAs by Confined ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

257

II4, Compositionally-Graded Layers Composed of Tandem InGaAs ...  

Science Conference Proceedings (OSTI)

The specification of the 6 miscut is important because it provides step ..... of Metamorphic InGaP on GaAs and GaP for Wide-Bandgap Photovoltaic Junctions.

258

High-Efficiency Non-Polar GaN-Based LEDs  

Science Conference Proceedings (OSTI)

Inlustra Technologies with subcontractor U.C. Santa Barbara conducted a project with the principle goal of demonstrating high internal quantum efficiency blue (430 nm) and green (540nm) light emitting diodes (LEDs) on low-defect density non-polar GaN wafers. Inlustra pursued the fabrication of smooth thick a-plane and m-plane GaN films, as well as defect reduction techniques such as lateral epitaxial overgrowth (LEO) to uniformly lower dislocation density in these films. Limited free-standing wafers were produced as well. By the end of the reporting period, Inlustra had met its milestone of dislocation reduction to LED performance. Inlustra's LEO progress built a solid foundation upon which further commercial development of GaN substrates will occur. UCSB encountered multiple delays in its LED growth and fabrication efforts due to unavoidable facilities outages imposed by ongoing construction in an area adjacent to the metalorganic chemical vapor deposition (MOCVD) laboratory. This, combined with the large amount of ab initio optimization required for the MOCVD system used during the project, resulted in unsatisfactory LED progress. Although numerous blue-green photoluminescence results were obtained, only a few LED structures exhibited electroluminescence at appreciable levels. UCSB also conducting extensive modeling (led by Prof. Van de Walle) on the problem of non-radiative Auger recombination in GaN-based LED structures, which has been posited to contribute to LED efficiency 'droop' at elevated current density. Unlike previous modeling efforts, UCSB's approach was truly a first-principles ab initio methodology. Building on solid numerical foundations, the Auger recombination rates of In{sub x}Ga{sub 1-x}N alloys were calculated from first-principles density-functional and many-body-perturbation theory. The differing mechanisms of inter- and intra-band recombination were found to affect different parts of the emission spectrum. In the blue to green spectral region and at room temperature the Auger coefficient was calculated to be as large as 2 x 10{sup -30} cm{sup 6} s{sup -1}; in the infrared it is even larger. These results indicated that Auger recombination may be responsible for the loss of quantum efficiency that affects InGaN-based light emitters, whether on non-polar or polar crystal planes.

Paul Fini

2010-11-30T23:59:59.000Z

259

High-Efficiency Non-Polar GaN-Based LEDs  

SciTech Connect

Inlustra Technologies with subcontractor U.C. Santa Barbara conducted a project with the principle goal of demonstrating high internal quantum efficiency blue (430 nm) and green (540nm) light emitting diodes (LEDs) on low-defect density non-polar GaN wafers. Inlustra pursued the fabrication of smooth thick a-plane and m-plane GaN films, as well as defect reduction techniques such as lateral epitaxial overgrowth (LEO) to uniformly lower dislocation density in these films. Limited free-standing wafers were produced as well. By the end of the reporting period, Inlustra had met its milestone of dislocation reduction to < 5 x 10{sup 6} cm{sup -2}. Stacking faults were still present in appreciable density ({approx} 1 x 10{sup 5} cm{sup -1}), but were not the primary focus of defect reduction since there have been no published studies establishing their detrimental effects on LED performance. Inlustra's LEO progress built a solid foundation upon which further commercial development of GaN substrates will occur. UCSB encountered multiple delays in its LED growth and fabrication efforts due to unavoidable facilities outages imposed by ongoing construction in an area adjacent to the metalorganic chemical vapor deposition (MOCVD) laboratory. This, combined with the large amount of ab initio optimization required for the MOCVD system used during the project, resulted in unsatisfactory LED progress. Although numerous blue-green photoluminescence results were obtained, only a few LED structures exhibited electroluminescence at appreciable levels. UCSB also conducting extensive modeling (led by Prof. Van de Walle) on the problem of non-radiative Auger recombination in GaN-based LED structures, which has been posited to contribute to LED efficiency 'droop' at elevated current density. Unlike previous modeling efforts, UCSB's approach was truly a first-principles ab initio methodology. Building on solid numerical foundations, the Auger recombination rates of In{sub x}Ga{sub 1-x}N alloys were calculated from first-principles density-functional and many-body-perturbation theory. The differing mechanisms of inter- and intra-band recombination were found to affect different parts of the emission spectrum. In the blue to green spectral region and at room temperature the Auger coefficient was calculated to be as large as 2 x 10{sup -30} cm{sup 6} s{sup -1}; in the infrared it is even larger. These results indicated that Auger recombination may be responsible for the loss of quantum efficiency that affects InGaN-based light emitters, whether on non-polar or polar crystal planes.

Paul Fini

2010-11-30T23:59:59.000Z

260

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm, Mingwei Zhu  

E-Print Network (OSTI)

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm in nonpolar light-emitting diodes (LEDs) covering the blue to green spectral range. In photo- luminescence, m's overall power efficiency. Linearly polarized light can be efficiently generated in GaInN/GaN-based light-emitting

Wetzel, Christian M.

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys ...  

Science Conference Proceedings (OSTI)

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys Based on the ... Resources for the Selection and Use of Interatomic Potentials in Atomistic...

262

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

contractors supported the dismantlement including asbestos removal and concrete cutting, electrical, and HVAC. Project support functions were provided by GA organizations...

263

Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 {mu}m  

Science Conference Proceedings (OSTI)

Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 {mu}m when Bi is introduced to InGaAs/GaAs QWs. The improved optical quality results from the Bi surfactant effect as well as the Bi incorporation. Post growth thermal annealing shows that Bi atoms in InGaAs/GaAs QWs do not show good thermal stability at 650 Degree-Sign C and tend to diffuse out of the QWs resulting in large wavelength blue-shifts.

Ye Hong; Song Yuxin; Wang Shumin [Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296 (Sweden); Gu Yi [Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2012-12-15T23:59:59.000Z

264

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots  

Science Conference Proceedings (OSTI)

In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation.

Gargallo-Caballero, R.; Guzman, A.; Ulloa, J. M.; Hierro, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM)-Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Hopkinson, M. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); Luna, E.; Trampert, A. [Paul Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2012-04-15T23:59:59.000Z

265

Bulk growth of GaSb and Ga{sub 1{minus}x}In{sub x}Sb  

DOE Green Energy (OSTI)

GaSb and InGaSb have been demonstrated to be suitable choices for high efficiency thermophotovoltaic (TPV) cells. Synthesis and growth of bulk GaSb single crystals and GaInSb polycrystals have been carried out by the vertical Bridgman technique, with a baffle immersed in the melt and by complete encapsulation of the melt by low melting temperature alkali halides or oxides. The critical roles of the baffle and the encapsulation are discussed. Efforts in obtaining device grade GaSb with superior structural and electrical properties and compositionally homogeneous GaInSb are described, emphasizing the key steps in the growth cycle developed to obtain good crystalline quality.

Dutta, P.S.; Ostrogorsky, A.G.; Gutmann, R.J.

1997-05-01T23:59:59.000Z

266

Status of High Polarization DC High Voltage GaAs Photoguns  

SciTech Connect

This talk will review the state of the art of high polarization GaAs photoguns used worldwide. Subject matter will include drive laser technology, photocathode material, gun design, vacuum requirements and photocathode lifetime as a function of beam current. Recent results have demonstrated high current, 85% polarized beams with high reliability and long lifetime under operational conditions. Research initiatives for ensuring production of high average and peak current beams for future accelerator facilities such as ELIC and the ILC will be also discussed.

P. A. Adderley; J. Brittian; J. Clark; J. Grames; J. Hansknecht; J. McCarter; M. Poelker; M. L. Stutzman; R. Suleiman; K. E. L. Surles-Law

2007-08-01T23:59:59.000Z

267

Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor  

Science Conference Proceedings (OSTI)

Keywords: Ga vacancies, GaN growth, gas feeding method, optical property, rapid thermal chemical vapor deposition (RTCVD), yellow luminescence

Sun Jung Kim; Young Hun Seo; Kee Suk Nahm; Yun Bong Hahn; Hyun Wook Shim; Eun-Kyung Suh; Kee Young Lim; Hyung Jae Lee

1999-08-01T23:59:59.000Z

268

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. (Research Triangle Inst., Research Triangle Park, NC (United States))

1993-01-01T23:59:59.000Z

269

Metering Technology  

Science Conference Proceedings (OSTI)

Utilities are looking to replace meters that only measure kilowatt-hours with advanced meters with greater features and functions. This White Paper describes the smart metering technology that is already available or will be available in the near future. It also provides a high-level overview of the wired and wireless communication technologies used in the metering industry.

2008-06-20T23:59:59.000Z

270

Solid-State Lighting Issue 15: Selected Business & Technology News  

NLE Websites -- All DOE Office Websites (Extended Search)

9/2002 9/2002 | Table of Contents | Abstracts | Credit and Disclaimer | ISSUE 15: BUSINESS AND TECHNOLOGY NEWS (September - November 2002) A selection of news appears in this section. A. Developer News B. New Products C. Research Results D. Government Activities and Funding News E. Overview Articles Where possible, links to full-text articles and press releases have been included in the abstracts. Click on the links in the table below to go directly to the abstract. Table of Contents: Business and Technology News A. Developer News · Amtech Lighting Services will provide LED traffic signals for City of Dallas, TX. · ATMI received a $9.46 million ONR grant to develop AlGaN/GaN HEMTs on 4-inch GaN and SiC substrates, part of DARPA’s Wide Bandgap Semiconductor Technology Initiative.

271

Technology Search Results | Brookhaven Technology ...  

BSA 11-30: Enhanced Alkane production by Aldehyde Decarbonylase Fusion Constructs; BSA 12-36: Oil Accumulation in Plant Leaves; Find a Technology.

272

Technology Search Results | Brookhaven Technology ...  

There are 9 technologies tagged "cancer". BSA 01-02: ... a limited-liability company founded by the Research Foundation for the State University of ...

273

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Courtesy of ZCorp The Rapid Prototyping Laboratory (RPL) supports internal design, manufacturing, and process development with three rapid prototyping (RP) technologies:...

274

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

parts Brazing large complex parts The joining and heat-treating technologies in the Thin Film, Vacuum, & Packaging department include brazing, heat-treating, diffusion...

275

Vehicle Technologies Office: Vehicle Technologies Office Recognizes  

NLE Websites -- All DOE Office Websites (Extended Search)

Vehicle Technologies Vehicle Technologies Office Recognizes Outstanding Researchers to someone by E-mail Share Vehicle Technologies Office: Vehicle Technologies Office Recognizes Outstanding Researchers on Facebook Tweet about Vehicle Technologies Office: Vehicle Technologies Office Recognizes Outstanding Researchers on Twitter Bookmark Vehicle Technologies Office: Vehicle Technologies Office Recognizes Outstanding Researchers on Google Bookmark Vehicle Technologies Office: Vehicle Technologies Office Recognizes Outstanding Researchers on Delicious Rank Vehicle Technologies Office: Vehicle Technologies Office Recognizes Outstanding Researchers on Digg Find More places to share Vehicle Technologies Office: Vehicle Technologies Office Recognizes Outstanding Researchers on AddThis.com...

276

Vehicle Technologies Office: Graduate Automotive Technology Education  

NLE Websites -- All DOE Office Websites (Extended Search)

Deployment Deployment Site Map Printable Version Share this resource Send a link to Vehicle Technologies Office: Graduate Automotive Technology Education (GATE) to someone by E-mail Share Vehicle Technologies Office: Graduate Automotive Technology Education (GATE) on Facebook Tweet about Vehicle Technologies Office: Graduate Automotive Technology Education (GATE) on Twitter Bookmark Vehicle Technologies Office: Graduate Automotive Technology Education (GATE) on Google Bookmark Vehicle Technologies Office: Graduate Automotive Technology Education (GATE) on Delicious Rank Vehicle Technologies Office: Graduate Automotive Technology Education (GATE) on Digg Find More places to share Vehicle Technologies Office: Graduate Automotive Technology Education (GATE) on AddThis.com...

277

Building Technologies Office: Emerging Technologies Activities  

NLE Websites -- All DOE Office Websites (Extended Search)

Emerging Technologies Emerging Technologies Activities to someone by E-mail Share Building Technologies Office: Emerging Technologies Activities on Facebook Tweet about Building Technologies Office: Emerging Technologies Activities on Twitter Bookmark Building Technologies Office: Emerging Technologies Activities on Google Bookmark Building Technologies Office: Emerging Technologies Activities on Delicious Rank Building Technologies Office: Emerging Technologies Activities on Digg Find More places to share Building Technologies Office: Emerging Technologies Activities on AddThis.com... About Take Action to Save Energy Partner with DOE Activities Appliances Research Building Envelope Research Windows, Skylights, & Doors Research Space Heating & Cooling Research Water Heating Research

278

Vehicle Technologies Office: Fact #290: October 20, 2003 Top...  

NLE Websites -- All DOE Office Websites (Extended Search)

Beach, Fla. 57 14 Seattle-Everett, Wash. 56 15 Atlanta 55 16 Houston 55 17 San Bernardino-Riverside, Calif 55 18 Detroit 54 19 Minneapolis-St. Paul 53 20 Dallas-Ft. Worth, Tex. 51...

279

FUEL CELL TECHNOLOGIES PROGRAM Technologies  

E-Print Network (OSTI)

.eere.energy.gov/informationcenter hydrogen and electricity for fuel cell and plug-in hybrid electric vehicles while using proven stationary vehicles with its own fuel cell technology. Currently, advanced vehicle technologies are being evalu- ated and fuel cells offer great promise for our energy future. Fuel cell vehicles are not yet commercially

280

Building Technologies Office: Emerging Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Creating the Next Generation of Energy Efficient Technology Creating the Next Generation of Energy Efficient Technology The Emerging Technologies team partners with national laboratories, industry, and universities to advance research, development, and commercialization of energy efficient and cost effective building technologies. These partnerships help foster American ingenuity to develop cutting-edge technologies that have less than 5 years to market readiness, and contribute to the goal to reduce energy consumption by at least 50%. Sandia Cooler's innovative, compact design combines a fan and a finned metal heat sink into a single element, efficiently transferring heat in microelectronics and reducing energy use. Supporting Innovative Research to Help Reduce Energy Use and Advance Manufacturing Learn More

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
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281

Microsoft Word - GT-ORNL - Quarterly Report - Ending 3 2010.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

3-31-2010 3-31-2010 Methane Recovery from Hydrate-bearing Sediments Funding Number: DE-FC26-06NT42963 Submitted By: J. Carlos Santamarina Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0355 Phone: (404)-894.7605 Fax: (404)-894.2278 E-mail: jcs@gatech.edu Costas Tsouris Oak Ridge National Laboratory Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0373 E-mail: costas.tsouris@ce.gatech.edu Acknowledgment: This material is based upon work supported by the Department of Energy under Award Number DE-FC26-06NT42963 Disclaimer: This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes

282

Microsoft Word - GT-ORNL - Quarterly Report - Sep 2010.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

September 2010 September 2010 Methane Recovery from Hydrate-bearing Sediments Funding Number: DE-FC26-06NT42963 Submitted By: J. Carlos Santamarina Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0355 Phone: (404)-894.7605 Fax: (404)-894.2278 E-mail: jcs@gatech.edu Costas Tsouris Oak Ridge National Laboratory Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0373 E-mail: costas.tsouris@ce.gatech.edu Acknowledgment: This material is based upon work supported by the Department of Energy under Award Number DE-FC26-06NT42963 Disclaimer: This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes any

283

Microsoft Word - GT-ORNL - Quarterly Report - Ending 12 2009.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

12-31-2009 12-31-2009 Methane Recovery from Hydrate-bearing Sediments Funding Number: DE-FC26-06NT42963 Submitted By: J. Carlos Santamarina Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0355 Phone: (404)-894.7605 Fax: (404)-894.2278 E-mail: jcs@gatech.edu Costas Tsouris Oak Ridge National Laboratory Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0373 E-mail: costas.tsouris@ce.gatech.edu Acknowledgment: This material is based upon work supported by the Department of Energy under Award Number DE-FC26-06NT42963 Disclaimer: This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees,

284

Microsoft Word - GT-ORNL - Quarterly Report - July 2010.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

July 2010 July 2010 Methane Recovery from Hydrate-bearing Sediments Funding Number: DE-FC26-06NT42963 Submitted By: J. Carlos Santamarina Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0355 Phone: (404)-894.7605 Fax: (404)-894.2278 E-mail: jcs@gatech.edu Costas Tsouris Oak Ridge National Laboratory Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0373 E-mail: costas.tsouris@ce.gatech.edu Acknowledgment: "This material is based upon work supported by the Department of Energy under Award Number DE-FC26-06NT42963." Disclaimer: "This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor

285

Bonding and gap states at GaAs-oxide interfaces  

Science Conference Proceedings (OSTI)

The nature of bonding and possible causes of Fermi level pinning at high mobility-high dielectric constant oxide GaAs:HfO"2 interfaces are discussed. It is argued that these are atoms with defective bonding, rather than states due to the bulk semiconductor ... Keywords: GaAs, bonding, interface

John Robertson; Liang Lin

2011-04-01T23:59:59.000Z

286

Technology Analysis  

NLE Websites -- All DOE Office Websites (Extended Search)

* Heavy Vehicle Technologies * Heavy Vehicle Technologies * Multi-Path Transportation Futures * Idling Studies * EDrive Vehicle Monthly Sales Transportation Research and Analysis Computing Center Working With Argonne Contact TTRDC Technology Analysis truck Heavy vehicle techologies are one subject of study. Research Reducing Greenhouse Gas Emissions from U.S. Transportation Heavy Vehicle Technologies Multi-Path Transportation Futures Study Idling Studies Light Duty Electric Drive Vehicles Monthly Sales Updates Lithium-Ion Battery Recycling and Life Cycle Analysis Reports Propane Vehicles: Status, Challenges, and Opportunities (pdf; 525 kB) Natural Gas Vehicles: Status, Barriers, and Opportunities (pdf; 696 kB) Regulatory Influences That Will Likely Affect Success of Plug-in Hybrid and Battery Electric Vehicles (pdf; 1.02 MB)

287

Fabrication Technology  

SciTech Connect

The mission of the Fabrication Technology thrust area is to have an adequate base of manufacturing technology, not necessarily resident at Lawrence Livermore National Laboratory (LLNL), to conduct the future business of LLNL. The specific goals continue to be to (1) develop an understanding of fundamental fabrication processes; (2) construct general purpose process models that will have wide applicability; (3) document findings and models in journals; (4) transfer technology to LLNL programs, industry, and colleagues; and (5) develop continuing relationships with the industrial and academic communities to advance the collective understanding of fabrication processes. The strategy to ensure success is changing. For technologies in which they are expert and which will continue to be of future importance to LLNL, they can often attract outside resources both to maintain their expertise by applying it to a specific problem and to help fund further development. A popular vehicle to fund such work is the Cooperative Research and Development Agreement with industry. For technologies needing development because of their future critical importance and in which they are not expert, they use internal funding sources. These latter are the topics of the thrust area. Three FY-92 funded projects are discussed in this section. Each project clearly moves the Fabrication Technology thrust area towards the goals outlined above. They have also continued their membership in the North Carolina State University Precision Engineering Center, a multidisciplinary research and graduate program established to provide the new technologies needed by high-technology institutions in the US. As members, they have access to and use of the results of their research projects, many of which parallel the precision engineering efforts at LLNL.

Blaedel, K.L.

1993-03-01T23:59:59.000Z

288

Elastic properties of Pu metal and Pu-Ga alloys  

Science Conference Proceedings (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

289

Infiltration in ASHRAE's Residential Ventilation Standards  

E-Print Network (OSTI)

Engineers,Atlanta,GA. (1993) ASTM,StandardE1827?96,StandardTestMethodsforDeterminingAirtightnessofDoor, ASTM Book of Standards, American Society of

Sherman, Max

2008-01-01T23:59:59.000Z

290

Methane Hydrate Advisory Committee Meeting Minutes, January 2010...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

January 2010 Methane Hydrate Advisory Committee Meeting Minutes, January 2010 Methane Hydrate Advisory Committee Meeting Minutes January, 2010 Atlanta, GA Methane Hydrate Advisory...

291

NETL F 451.1-1/1 Categorical Exclusion (CX) Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

812010 - 7312012 Atlanta, GA Training Program for Commercial Building Energy Commissioning AgentsAuditors Training curriculum development for energy commissioning agents...

292

DRAFT - EXPOSURE FACTORS HANDBOOK - Update to Exposure Factors...  

NLE Websites -- All DOE Office Websites (Extended Search)

Atlanta, GA. exchange rate -- can be used by exposure assessors in ASHRAE. (1993) ASHRAE Handbook: Fundamentals. modeling indoor-air concentrations as one of the inputs to...

293

RESIDENTIAL THERMOSTATS: COMFORT CONTROLS IN CALIFORNIA HOMES  

E-Print Network (OSTI)

for Residential Winter and Summer Air Conditioning.Air Conditioning Contractors of America. Washington, DC.refrigerating and Air-conditioning Engineers, Atlanta, GA.

Meier, Alan K.

2008-01-01T23:59:59.000Z

294

Energy Impact of Residential Ventilation Norms in the United States  

E-Print Network (OSTI)

Refrigerating and Air Conditioning Engineers, Atlanta, GA.for Residential Winter and Summer Air Conditioning.Air Conditioning Contractors of America, Washington, DC. 10.

Sherman, Max H.; Walker, Iain S.

2007-01-01T23:59:59.000Z

295

NETL F 451.1-1/1 Categorical Exclusion (CX) Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2009 S. Richardson 10012009 through 09302013 2193 Peachtree Rd, Atlanta, GA E85 (Ethanol) Retail Fueling Infrastructure Installation Installation of E85 (ethanol) retail...

296

Department of Energy Honors 50 ENERGY STAR Partners that Saved...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Mass.) The Saunders Hotel Group (Boston, Mass.) Servidyne Systems, LLC (Atlanta, Ga.) Toyota Motor Manufacturing North America Inc. (Erlanger, Ky.) Transwestern Commercial...

297

Publications  

NLE Websites -- All DOE Office Websites (Extended Search)

of Operating Hardware on Window Thermal Performance." In BEST3 Conference. Atlanta, GA, 2012. 2011 Gustavsen, Arlid, Steinar Grynning, Dariush K. Arasteh, Bjrn Petter...

298

Building and Fire Publications  

Science Conference Proceedings (OSTI)

... (1353 K) Davis, WD. CH-99-8-1; ASHRAE Transactions: Symposia, Vol. 105, No. ... (ASHRAE), 1791 Tullie Circle NE, Atlanta, GA 30329. ...

299

Residential Forced Air System Cabinet Leakage and Blower Performance  

E-Print Network (OSTI)

ductleakagetesting. ASHRAETransactions,June2008. ASHRAE,Atlanta,GA. LBNL62262. Walker,I.S. (Institute,Arlington,VA. ASHRAEStandard103. (2007).

Walker, Iain S.

2010-01-01T23:59:59.000Z

300

Building and Fire Publications  

Science Conference Proceedings (OSTI)

... (ASHRAE). October 6-8, 1996, Baltimore, MD, ASHRAE, Atlanta, GA, Teichman, KY, Editor(s), 139-150 pp, 1996. Keywords: ...

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Project Brief: ASHRAE, Inc.  

Science Conference Proceedings (OSTI)

... RECIPIENT: ASHRAE, Inc., Atlanta, GA. Project duration: 3 Years; Total NIST Funding: $1,500,000. ... Jodi Dunlop, 678-539-1140 jdunlop@ashrae.org. ...

2010-10-05T23:59:59.000Z

302

NETL F 451.1-1/1 Categorical Exclusion (CX) Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2009 - 92013 250 Arizona Ave, Atlanta, GA I-75 Green Corridor Project Install retail biofuel fueling infrastructure along the Interstate 75 corridor. 09 01 2010 Digitally signed...

303

Laboratories for the 21st Century: Best Practices Guide  

NLE Websites -- All DOE Office Websites (Extended Search)

Society of Heating, Refrigeration, and Air-condi- tioning Engineers (ASHRAE), 2005 Fundamentals Handbook, Atlanta, GA: ASHRAE, 2005. ASHRAE Laboratory Design Guide, American...

304

Al-Cr -2007-1 February 1, 2007 Aluminum and Chromium Leaching ...  

Al-Cr -2007-1 February 1, 2007 Aluminum and Chromium Leaching Workshop Atlanta, GA January 23 24, 2007 Crowne Plaza Airport Feedback Questionnaire

305

Parametric System Curves: Correlations Between Fan Pressure Rise and Flow for Large Commercial Buildings  

E-Print Network (OSTI)

Filter Pressure Loss Model for Fan Energy Calculation in Air2010. Selecting Efficient Fans. ASHRAE Journal, Vol. 52,Equipment: Chapter 20 Fans. Atlanta, GA: American Society

Sherman, Max

2010-01-01T23:59:59.000Z

306

Home Depot Foundation | Open Energy Information  

Open Energy Info (EERE)

Depot Foundation Jump to: navigation, search Name Home Depot Foundation Place Atlanta, GA Website http:www.homedepotfoundation References Home Depot Foundation1 Information...

307

The Department of Energy is hosting a Non-Destructive ...  

The Department of Energy is hosting a Non-Destructive Examination Independent Review in Atlanta, GA . ... AGENDA I HOTEL I REGISTER I PRESENTER GUIDELINES I WEBCAST ...

308

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells  

E-Print Network (OSTI)

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells J. Schörmann,a S and multiple quantum wells. The well widths ranged from 2.5 to 7.5 nm. Samples were grown by rf-plasma assisted wells clear reflection high energy electron diffraction oscillations were observed indicating a two

As, Donat Josef

309

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN  

E-Print Network (OSTI)

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN Christian in green light emitting diodes is one of the big challenges towards all-solid- state lighting. The prime,3], and commercialization [4,5] of high brightness light emitting diodes LEDs has led to a 1.82 Billion-$/year world market

Detchprohm, Theeradetch

310

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network (OSTI)

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

311

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network (OSTI)

be applicable to light sources in fiber-optic communication systems.13 However, there have been no reports intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

312

Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells  

Science Conference Proceedings (OSTI)

We investigate the incorporation of nitrogen into (Ga,In)Sb grown on GaSb and report room temperature photoluminescence from GaInSb(N) quantum wells. X-ray diffraction and channeling nuclear reaction analysis, together with Rutherford backscattering, were employed to identify the optimal molecular beam epitaxial growth conditions that minimized the incorporation of non-substitutional nitrogen into GaNSb. Consistent with this hypothesis, GaInSb(N) quantum wells grown under the conditions that minimized non-substitutional nitrogen exhibited room temperature photoluminescence, indicative of significantly improved radiative efficiency. Further development of this material system could enable type-I laser diodes emitting throughout the (3-5 {mu}m) wavelength range.

Nair, Hari P.; Crook, Adam M.; Bank, Seth R. [Microelectronics Research Center, Electrical and Computer Engineering, University of Texas at Austin, 10100 Burnet Rd, Austin, Texas 78712 (United States); Yu, Kin M. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2012-01-09T23:59:59.000Z

313

GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy  

Science Conference Proceedings (OSTI)

We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments.

Smakman, E. P.; Garleff, J. K.; Rambabu, P.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven 5612 AZ (Netherlands); Young, R. J.; Hayne, M. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2012-04-02T23:59:59.000Z

314

Building Technologies Office: 2013 DOE Building Technologies...  

NLE Websites -- All DOE Office Websites (Extended Search)

2013 DOE Building Technologies Office Program Review to someone by E-mail Share Building Technologies Office: 2013 DOE Building Technologies Office Program Review on Facebook Tweet...

315

National Energy Technology Laboratory Technology Marketing ...  

National Energy Technology Laboratory Technology Marketing Summaries. Here youll find marketing summaries for technologies available for licensing from the ...

316

X-ray Photoelectron Spectroscopy ofGaP_{1-x}N_x Photocorroded as a Result of Hydrogen Productionthrough Water Electrolysis  

DOE Green Energy (OSTI)

Photoelectrochemical (PEC) cells produce hydrogen gas through the sunlight driven electrolysis of water. By extracting hydrogen and oxygen from water and storing solar energy in the H-H bond, they offer a promising renewable energy technology. Addition of dilute amounts of nitrogen to III-V semiconductors has been shown to dramatically increase the stability of these materials for hydrogen production. In an effort to learn more about the origin of semiconductor photocorrosion in PEC cells, three samples of p-type GaP with varying levels of nitrogen content (0%, 0.2%, 2%) were photocorroded and examined by X-ray Photoelectron Spectroscopy (XPS). GaPN samples were observed to be more efficient during the hydrogen production process than the pure GaP samples. Sample surfaces contained gallium oxides in the form of Ga{sub 2}O{sub 3} and Ga(OH){sub 3} and phosphorus oxide (P{sub 2}O{sub 5}), as well as surface oxides from exposure to air. A significant shift in intensity from bulk to surface peaks dramatic nitrogen segregation to the surface during photoelectrochemical hydrogen production. Further investigations, including using a scanning electron microscope to investigate sample topography and inductively coupled plasma mass spectroscopy (ICP-MS) analysis for solution analyses, are under way to determine the mechanism for these changes.

Mayer, Marie A.; /Illinois U., Urbana /SLAC

2006-09-27T23:59:59.000Z

317

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

DOE Green Energy (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

318

Technology Transfer  

NLE Websites -- All DOE Office Websites (Extended Search)

Energy Efficiency & Renewable and Energy - Commercialization Energy Efficiency & Renewable and Energy - Commercialization Deployment SBIR/STTR - Small Business Innovation Research and Small Business Technology Transfer USEFUL LINKS Contract Opportunities: FBO.gov FedConnect.net Grant Opportunities DOE Organization Chart Association of University Technology Managers (AUTM) Federal Laboratory Consortium (FLC) Feedback Contact us about Tech Transfer: Mary.McManmon@science.doe.gov Mary McManmon, 202-586-3509 link to Adobe PDF Reader link to Adobe Flash player Licensing Guide and Sample License The Technology Transfer Working Group (TTWG), made up of representatives from each DOE Laboratory and Facility, recently created a Licensing Guide and Sample License [762-KB PDF]. The Guide will serve to provide a general understanding of typical contract terms and provisions to help reduce both

319

NREL: Geothermal Technologies - Projects  

NLE Websites -- All DOE Office Websites (Extended Search)

and Technology Technology Transfer Technology Deployment Energy Systems Integration Geothermal Technologies Search More Search Options Site Map Printable Version Projects The NREL...

320

NREL: Geothermal Technologies - Capabilities  

NLE Websites -- All DOE Office Websites (Extended Search)

and Technology Technology Transfer Technology Deployment Energy Systems Integration Geothermal Technologies Search More Search Options Site Map Printable Version Capabilities The...

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

NREL: Geothermal Technologies - News  

NLE Websites -- All DOE Office Websites (Extended Search)

and Technology Technology Transfer Technology Deployment Energy Systems Integration Geothermal Technologies Search More Search Options Site Map Printable Version Geothermal News...

322

Building Technologies Office: News  

NLE Websites -- All DOE Office Websites (Extended Search)

Technologies Office: News on Twitter Bookmark Building Technologies Office: News on Google Bookmark Building Technologies Office: News on Delicious Rank Building Technologies...

323

Building Technologies Office: About  

NLE Websites -- All DOE Office Websites (Extended Search)

Technologies Office: About on Twitter Bookmark Building Technologies Office: About on Google Bookmark Building Technologies Office: About on Delicious Rank Building Technologies...

324

Foreign Obligations Implementation Status Presentation  

National Nuclear Security Administration (NNSA)

January 13, 2004 Crowne Plaza Ravinia Atlanta, January 13, 2004 Crowne Plaza Ravinia Atlanta, January 13, 2004 Crowne Plaza Ravinia Atlanta, Georgia Georgia Obligations Accounting Implementation Workshop Obligations Accounting Implementation Workshop Foreign Obligations Implementation Status Brian G. Horn U.S. Nuclear Regulatory Commission January 13, 2004 Obligations Accounting Implementation Workshop January 13, 2 Obligations Accounting Implementation Workshop January 13, 2004 Crowne Plaza Ravinia Atlanta, GA 004 Crowne Plaza Ravinia Atlanta, GA Overview of Meeting Overview of Meeting * Review how the Obligation Tracking System is working * Presentations: - Review of Government notification procedures - Establishment of the beginning Obligation Balances for sites

325

Manufacturing technology  

SciTech Connect

The specific goals of the Manufacturing Technology thrust area are to develop an understanding of fundamental fabrication processes, to construct general purpose process models that will have wide applicability, to document our findings and models in journals, to transfer technology to LLNL programs, industry, and colleagues, and to develop continuing relationships with industrial and academic communities to advance our collective understanding of fabrication processes. Advances in four projects are described here, namely Design of a Precision Saw for Manufacturing, Deposition of Boron Nitride Films via PVD, Manufacturing and Coating by Kinetic Energy Metallization, and Magnet Design and Application.

Blaedel, K.L.

1997-02-01T23:59:59.000Z

326

Dielectrics for GaN based MIS-diodes  

SciTech Connect

GaN MIS diodes were demonstrated utilizing AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as insulators. A 345 {angstrom} of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) growth, a multi MBE chamber was used and a 195 {angstrom} oxide is E-beam evaporated from a single crystal source of Ga{sub 5}Gd{sub 3}O{sub 12}. The forward breakdown voltage of AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) diodes are 5V and 6V, respectively, which are significantly improved from {approximately} 1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.

Ren, F.; Abernathy, C.R.; MacKenzie, J.D. [Univ. of Florida, Gainesville, FL (United States)] [and others

1998-02-01T23:59:59.000Z

327

Multiconfiguration Dirac-Fock calculations on multi-valence-electron systems: Benchmarks on Ga-like ions  

Science Conference Proceedings (OSTI)

High-accuracy calculations of term energies and wavelengths of resonance lines in Ga-like ions have been performed as benchmarks in the request for accurate treatments of relativity, electron correction, and QED effects in multi-valence-electron systems. The calculated energy levels are in excellent agreement with the experimental results and the experimentally compiled energy values of the National Institute for Standards and Technology wherever available. The calculated values including core-valence correction are found to be in good agreement with other theoretical and experimental values for low- to medium-Z ions. On the basis of our calculations, some theoretical wavelengths for Ga-like Rb vii to Mo xii are also given. For higher-Z ions, computed wavelengths are compared well with the experimental results [E. Traebert, J. Clementson, P. Beiersdorfer, J. A. Santana, and Y. Ishikawa, Phys. Rev. A 82, 062519 (2010), I. N Draganicet al., J. Phys. B 44, 025001 (2011)].

Hu Feng [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang, 621900 Sichuan (China); Institute of Atomic and Molecular Physics, Sichuan University, Chengdu, 610065 Sichuan (China); Yang Jiamin; Wang Chuanke; Jing Longfei; Chen Shubo [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang, 621900 Sichuan (China); Jiang Gang; Liu Hao; Hao Lianghuan [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu, 610065 Sichuan (China)

2011-10-15T23:59:59.000Z

328

PNNL: Available Technologies - Browse Technologies by Portfolio  

Search PNNL. PNNL Home; About; Research; Publications; Jobs; News; Contacts; Browse Technologies by Portfolio. Select a technology portfolio to view ...

329

Idaho National Laboratory - Technology Transfer - Technologies ...  

Idaho National Laboratory Technologies Available for Licensing ... Fossil Energy; Information Technology; Manufacturing ; Materials; National Security; Non-Nuclear ...

330

Geothermal Technologies Office: Geothermal Electricity Technology...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

and Renewable Energy EERE Home | Programs & Offices | Consumer Information Geothermal Technologies Office Search Search Help Geothermal Technologies Office HOME ABOUT...

331

Geothermal Technologies Office: Enhanced Geothermal Systems Technologi...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

and Renewable Energy EERE Home | Programs & Offices | Consumer Information Geothermal Technologies Office Search Search Help Geothermal Technologies Office HOME ABOUT...

332

NETL: Technology Transfer - Available Technologies for Partnership  

Technology Transfer Available Technologies for Partnership Software and Modeling. Month Posted. Partnership Opportunity. Patent Information. 12/2011: ...

333

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells  

E-Print Network (OSTI)

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells H. C. Chui, S. M. Lord report the first observation of intersubband transitions in In,Ga, -#s(y=O.3,0.5)/ AlGaAs quantum wells. These quantum wells were grown on a GaAs substrate with a linearly graded InGaAs buffer to achieve strain

Fejer, Martin M.

334

Atomic hydrogen cleaning of polarized GaAs photocathodes  

DOE Green Energy (OSTI)

Atomic hydrogen cleaning followed by heat cleaning at 450 C was used to prepare negative-electron-affinity GaAs photocathodes. When hydrogen ions were eliminated, quantum efficiencies of 15% were obtained for bulk GaAs cathodes, higher than the results obtained using conventional 600 C heat cleaning. The low-temperature cleaning technique was successfully applied to thin, strained GaAs cathodes used for producing highly polarized electrons. No depolarization was observed even when the optimum cleaning time of about 30 seconds was extended by a factor of 100.

Maruyama, Takashi

2003-04-03T23:59:59.000Z

335

Technologies Applications  

E-Print Network (OSTI)

evaporation systems n Potential mining applications (produced water) nIndustry applications for which silicaLicensable Technologies Applications: n Cooling tower systems n Water treatment systems n Water needed n Decreases the amount of makeup water and subsequent discharged water (blowdown) n Enables

336

Healthy technology  

Science Conference Proceedings (OSTI)

One of the biggest struggles user experience teams face is breaking through traditional notions of product strategy, planning and development to bring actionable awareness to the bigger picture around delivering full experiences that people really care ... Keywords: design management, design process, ethnography, experience, healthy technology, industry, lifecycle, metaphor, platform, reliability, research, security, strategy, sustainability

Ashwini Asokan; Michael .J. Payne

2008-04-01T23:59:59.000Z

337

Manufacturing technologies  

SciTech Connect

The Manufacturing Technologies Center is an integral part of Sandia National Laboratories, a multiprogram engineering and science laboratory, operated for the Department of Energy (DOE) with major facilities at Albuquerque, New Mexico, and Livermore, California. Our Center is at the core of Sandia`s Advanced Manufacturing effort which spans the entire product realization process.

NONE

1995-09-01T23:59:59.000Z

338

Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-08-01T23:59:59.000Z

339

On-Sun Comparison of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

This study compares the on-sun performance of a set of GaInP2/GaAs tandem cells with different GaInP2 top-cell thicknesses. Because high-efficiency III-V cells are best suited to concentrating photovoltaic (CPV) applications, the cells were mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for an ''air mass 1.5 global'' (AM 1.5G) or a ''low aerosol optical depth'' (Low AOD) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra to predict the correct result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emery, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-02-01T23:59:59.000Z

340

Vacuum Technology  

SciTech Connect

The environmental condition called vacuum is created any time the pressure of a gas is reduced compared to atmospheric pressure. On earth we typically create a vacuum by connecting a pump capable of moving gas to a relatively leak free vessel. Through operation of the gas pump the number of gas molecules per unit volume is decreased within the vessel. As soon as one creates a vacuum natural forces (in this case entropy) work to restore equilibrium pressure; the practical effect of this is that gas molecules attempt to enter the evacuated space by any means possible. It is useful to think of vacuum in terms of a gas at a pressure below atmospheric pressure. In even the best vacuum vessels ever created there are approximately 3,500,000 molecules of gas per cubic meter of volume remaining inside the vessel. The lowest pressure environment known is in interstellar space where there are approximately four molecules of gas per cubic meter. Researchers are currently developing vacuum technology components (pumps, gauges, valves, etc.) using micro electro mechanical systems (MEMS) technology. Miniature vacuum components and systems will open the possibility for significant savings in energy cost and will open the doors to advances in electronics, manufacturing and semiconductor fabrication. In conclusion, an understanding of the basic principles of vacuum technology as presented in this summary is essential for the successful execution of all projects that involve vacuum technology. Using the principles described above, a practitioner of vacuum technology can design a vacuum system that will achieve the project requirements.

Biltoft, P J

2004-10-15T23:59:59.000Z

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer  

Science Conference Proceedings (OSTI)

We investigate the strain properties of GaN films grown by plasma-assisted molecular beam epitaxy on Si(110) substrates. It is found that the strain of the GaN film can be converted from a tensile to a compressive state simply by inserting a thin AlN/GaN superlattice structure (SLs) within the GaN film. The GaN layers seperated by the SLs can have different strain states, which indicates that the SLs plays a key role in the strain modulation during the growth and the cooling down processes. Using this simple technique, we grow a crack-free GaN film exceeding 2-{mu}m-thick. The realization of the compressively strained GaN film makes it possible to grow thick GaN films without crack generation on Si substrates for optic and electronic device applications.

Shen, X. Q.; Takahashi, T.; Kawashima, H.; Ide, T.; Shimizu, M. [Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki 305-8568 (Japan)

2012-07-16T23:59:59.000Z

342

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network (OSTI)

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

343

Pervasive Information Technology Homepage  

Science Conference Proceedings (OSTI)

Pervasive Information Technology. Pervasive information technology is the trend towards increasingly ubiquitous connected ...

2011-07-05T23:59:59.000Z

344

A rapid analytical pyrolysis method - Alfalfa (Medicago sativa)  

NLE Websites -- All DOE Office Websites (Extended Search)

Increase in 4-coumaryl alcohol (H) units during lignification in Increase in 4-coumaryl alcohol (H) units during lignification in alfalfa (Medicago sativa) alters extractability and molecular weight of lignin Angela Ziebell 1,2 , Kristen Gracom ,1,2 , Rui Katahira 1 , Fang Chen 3,4 , Yunqiao Pu 5,6 , Art Ragauskas 5,6 , Richard A. Dixon 3,4 and Mark Davis 1,2 1-National Bioenergy Center, National Renewable Energy Laboratory, Golden, CO 80401-3393; 2-Bioenergy Science Center, National Renewable Energy Laboratory, 1617 Golden, CO 80401-3393; 3-Samuel Roberts Noble Foundation, Ardmore, OK 73401; 4-Bioenergy Science Center, Ardmore, OK 73401; 5-Institute of Paper Science and Technology at Georgia Tech., Atlanta, GA 30318; 6-Bioenergy Science Center, Georgia Tech., Atlanta, GA 30318 Running head: Increase in coumaryl alcohol units alters lignin molecular weight

345

U  

NLE Websites -- All DOE Office Websites (Extended Search)

Katherine (nee Hornbostel) Ong. Ms. Ong grew up in Atlanta, GA Katherine (nee Hornbostel) Ong. Ms. Ong grew up in Atlanta, GA and is a senior mechanical engineering major at Georgia Institute of Technology. Under the Hybrid Performance Project, Ms. Ong explored the reaction kinetics of internal reforming for a solid oxide fuel cell. Specifically, the project tested fuel stream kinetic models in order to determine whether methane fuel could cause freezing damage to the solid oxide fuel cells. The U.S. Department of Energy, Office of Fossil Energy (FE) offers the MELF internships. The 10 week fellowship provides interns with a unique opportunity to gain hands-on experience on real energy-related projects. Qualified students are provided with an insider's view to the Federal government, with the aim of encouraging them to consider future employment with FE. By

346

Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep...

347

Lattice vibrations of pure and doped GaSe  

Science Conference Proceedings (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

348

Preparation of GaAs photocathodes at low temperature  

SciTech Connect

The preparation of an atomically clean surface is a necessary step in the formation of negative electron affinity (NEA) GaAs. Traditional methods to this end include cleaving, heat cleaning and epitaxial growth. Cleaving has the advantage of yielding a fresh surface after each cleave, but is limited to small areas and is not suitable for specialized structures. Heat cleaning is both simple and highly successful, so it is used as a preparation method in virtually all laboratories employing a NEA source on a regular basis. Due to its high cost and complexity, epitaxial growth of GaAs with subsequent in vacuo transfer is not a practical solution for most end users of GaAs as a NEA electron source. While simple, the heating cleaning process has a number of disadvantages. Here, a variety of cleaning techniques related to preparation of an atomically clean GaAs surface without heating to 600 C are discussed and evaluated.

Mulhollan, G.; Clendenin, J.; Tang, H.

1996-10-01T23:59:59.000Z

349

HH5, Antiferromagnetic Interlayer Exchange Couplings in Ga  

Science Conference Proceedings (OSTI)

Author(s), Sun Jae Chung, Sanghoon Lee, Brian J. Kirby, Julie A. Borchers, ... LATE NEWS: KK3, Non-Catalytic Synthesis of GaN Nanostructures at Low...

350

Micro Raman Spectroscopy of Annealed Erbium Implanted GaN  

E-Print Network (OSTI)

Wurtzite GaN epilayers grown by metal organic chemical vapor deposition on sapphire substrates were subsequently ion implanted with Er to a dose of 510? cm?. The implanted samples were annealed in nitrogen atmosphere ...

Vajpeyi, Agam P.

351

GaAs Films Prepared by RF-Magnetron Sputtering  

DOE Green Energy (OSTI)

The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

2001-08-01T23:59:59.000Z

352

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Equatorial Guinea (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Equatorial Guinea (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3...

353

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Nigeria (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Nigeria (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

354

Cathodoluminescence Microanalysis of Suspended GaN Nano ...  

Science Conference Proceedings (OSTI)

CL from bulk GaN is dominated by the ~3.4 eV near-band-edge emission. In contrast, the suspended nano-membranes emit a broad defect associated emission...

355

BB2, Novel Cs-Free GaN Photocathodes  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

356

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Trinidad and Tobago (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul...

357

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

358

Elba Island, GA Liquefied Natural Gas Total Imports (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Total Imports (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Total Imports (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5...

359

Atlanta, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.7489954°, -84.3879824° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.7489954,"lon":-84.3879824,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

360

IEEE Energy2030 Atlanta, Georgia, USA  

E-Print Network (OSTI)

principles that limit its ability to handle the key energy challenges of the 21st century. We propose be sized to handle peak demand levels, which are significantly higher than average demand and may sources. The grid was designed for central, large-scale, predictable power sources such as coal, natural

Ratnasamy, Sylvia

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

IEEE Energy2030 Atlanta, Georgia, USA  

E-Print Network (OSTI)

and power thermal units need to operate [10]. Fig. 1. Data flow of the proposed implementation. III. NETWORK plant. The meters monitor the output of wind power and the power consumption of each load. This information is reported to the ISO and to the power plant control center. A central scheduling controller uses

Oren, Shmuel S.

362

Ghost towers : distressed condominium investing in Atlanta  

E-Print Network (OSTI)

The purpose of this paper is to explore investment opportunities in these now-distressed residential condo properties. The paper will characterize the economic and development environment to determine the extent of ...

Whalen, Faraji L

2009-01-01T23:59:59.000Z

363

Clean Cities: Clean Cities-Atlanta coalition  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Skip to Content U.S. Department of Energy Energy Efficiency and Renewable Energy EERE Home | Programs & Offices | Consumer Information Clean Cities Search Search Help Clean Cities...

364

Microsoft Word - Atlanta Agenda FINAL _2_.doc  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

South Mississippi Electric Power Association Ed Ernst, Director, Transmission Planning, Duke Energy Terry Huval, Director, Lafayette Utilities System Ron Carlson, Project...

365

TECHNOLOGY TRANSFER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

404-NOV. 1, 2000 404-NOV. 1, 2000 TECHNOLOGY TRANSFER COMMERCIALIZATION ACT OF 2000 VerDate 11-MAY-2000 04:52 Nov 16, 2000 Jkt 089139 PO 00000 Frm 00001 Fmt 6579 Sfmt 6579 E:\PUBLAW\PUBL404.106 APPS27 PsN: PUBL404 114 STAT. 1742 PUBLIC LAW 106-404-NOV. 1, 2000 Public Law 106-404 106th Congress An Act To improve the ability of Federal agencies to license federally owned inventions. Be it enacted by the Senate and House of Representatives of the United States of America in Congress assembled, SECTION 1. SHORT TITLE. This Act may be cited as the ''Technology Transfer Commer- cialization Act of 2000''. SEC. 2. FINDINGS. The Congress finds that- (1) the importance of linking our unparalleled network of over 700 Federal laboratories and our Nation's universities with United States industry continues to hold great promise

366

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN  

Science Conference Proceedings (OSTI)

We investigate, via time-resolved photoluminescence, the temperature-dependence of charge carrier recombination mechanisms in nonpolar (Al,Ga)N/GaN single quantum wells (QWs) grown via molecular beam epitaxy on the a-facet of bulk GaN crystals. We study the influence of both QW width and barrier Al content on the dynamics of excitons in the 10-320 K range. We first show that the effective lifetime of QW excitons {tau} increases with temperature, which is evidence that nonradiative mechanisms do not play any significant role in the low-temperature range. The temperature range for increasing {tau} depends on the QW width and Al content in the (Al,Ga)N barriers. For higher temperatures, we observe a reduction in the QW emission lifetime combined with an increase in the decay time for excitons in the barriers, until both exciton populations get fully thermalized. Based on analysis of the ratio between barrier and QW emission intensities, we demonstrate that the main mechanism limiting the radiative efficiency in our set of samples is related to nonradiative recombination in the (Al,Ga)N barriers of charge carriers that have been thermally emitted from the QWs.

Corfdir, P.; Dussaigne, A.; Giraud, E.; Ganiere, J.-D.; Grandjean, N.; Deveaud-Pledran, B. [Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Teisseyre, H. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Suski, T.; Grzegory, I. [Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Lefebvre, P. [Laboratoire Charles Coulomb - UMR5221 - CNRS - Universite Montpellier 2, 34095 Montpellier (France)

2012-02-01T23:59:59.000Z

367

Manufacturing technology  

SciTech Connect

This bulletin depicts current research on manufacturing technology at Sandia laboratories. An automated, adaptive process removes grit overspray from jet engine turbine blades. Advanced electronic ceramics are chemically prepared from solution for use in high- voltage varistors. Selective laser sintering automates wax casting pattern fabrication. Numerical modeling improves performance of photoresist stripper (simulation on Cray supercomputer reveals path to uniform plasma). And mathematical models help make dream of low- cost ceramic composites come true.

Leonard, J.A.; Floyd, H.L.; Goetsch, B.; Doran, L. [eds.

1993-08-01T23:59:59.000Z

368

Biomass Technologies  

Energy.gov (U.S. Department of Energy (DOE))

There are many types of biomassorganic matter such as plants, residue from agriculture and forestry, and the organic component of municipal and industrial wastesthat can now be used to produce fuels, chemicals, and power. Wood has been used to provide heat for thousands of years. This flexibility has resulted in increased use of biomass technologies. According to the Energy Information Administration, 53% of all renewable energy consumed in the United States was biomass-based in 2007.

369

TECHNOLOGY ADMINISTRATION  

E-Print Network (OSTI)

This report originated in the authors participation in a multi-country study of national innovation systems and their impact on new technology development, sponsored by the Organization for Economic Cooperation and Development (OECD). Our task was to look at the U.S. national innovation systems impact on the commercial development of Proton Exchange Membrane (PEM) fuel cells for residential power applications. Early drivers of PEM fuel cell innovation were the aerospace and defense programs, in particular the National Aeronautics and Space Administration (NASA), which used fuel cells on its spacecraft. In the early 1990s, deregulation hit the electric utility industry, which made utilities and entrepreneurs see the potential in generating electricity from distributed power. Throughout the 1990s, the Department of Energy funded a significant portion of civilian fuel cell research, while the Department of Defense and NASA funded more esoteric military and space applications. In 1998, the Department of Commerces Advanced Technology Program (ATP) awarded the first of 25 fuel cell projects, as prospects for adoption and commercialization of fuel cell technologies improved.

John M. Nail; Gary Anderson; Gerald Ceasar; Christopher J. Hansen; John M. Nail; Gerald Ceasar; Christopher J. Hansen; Carlos M. Gutierrez; Hratch G. Samerjian; Acting Director; Marc G. Stanley; Director Abstract

2005-01-01T23:59:59.000Z

370

Technology disrupted  

SciTech Connect

Three years ago, the author presented a report on power generation technologies which in summary said 'no technology available today has the potential of becoming transformational or disruptive in the next five to ten years'. In 2006 the company completed another strategic view research report covering the electric power, oil, gas and unconventional energy industries and manufacturing industry. This article summarises the strategic view findings and then revisits some of the scenarios presented in 2003. The cost per megawatt-hour of the alternatives is given for plants ordered in 2005 and then in 2025. The issue of greenhouse gas regulation is dealt with through carbon sequestration and carbon allowances or an equivalent carbon tax. Results reveal substantial variability through nuclear power, hydro, wind, geothermal and biomass remain competitive through every scenario. Greenhouse gas scenario analysis shows coal still be viable, albeit less competitive against nuclear and renewable technologies. A carbon tax or allowance at $24 per metric ton has the same effect on IGCC cost as a sequestration mandate. However, the latter would hurt gas plants much more than a tax or allowance. Sequestering CO{sub 2} from a gas plant is almost as costly per megawatt-hour as for coal. 5 refs., 5 figs., 5 tabs.

Papatheodorou, Y. [CH2M Hill (United States)

2007-02-15T23:59:59.000Z

371

Modeling of InGaSb thermophotovoltaic cells and materials  

DOE Green Energy (OSTI)

A closed form computer program has been developed for the simulation and optimization of In{sub x}Ga{sub 1{minus}x}Sb thermophotovoltaic cells operating at room temperature. The program includes material parameter models of the energy bandgap, optical absorption constant, electron and hole mobility, intrinsic carrier concentration and index of refraction for any composition of GaInSb alloys.

Zierak, M.; Borrego, J.M.; Bhat, I.; Gutmann, R.J. [Rensselaer Polytechnic Inst., Troy, NY (United States); Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

372

SEU design consideration for MESFETs on LT GaAs  

SciTech Connect

Computer simulation results are reported on transistor design and single-event charge collection modeling of metal-semiconductor field effect transistors (MESFETs) fabricated in the Vitesse H-GaAsIII{reg_sign} process on Low Temperature grown (LT) GaAs epitaxial layers. Tradeoffs in Single Event Upset (SEU) immunity and transistor design are discussed. Effects due to active loads and diffusion barriers are examined.

Weatherford, T.R.; Radice, R.; Eskins, D. [Naval Postgraduate School, Monterey, CA (United States)] [and others

1997-12-01T23:59:59.000Z

373

Influence of defect formation as a result of incorporation of a Mn {delta} layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells  

Science Conference Proceedings (OSTI)

The influence of defect formation upon the deposition of a Mn {delta} layer and a GaAs coating layer (with the use of laser evaporation) on the photosensitivity spectra of heterostructures with InGaAs/GaAs quantum wells located in the near-surface region has been studied.

Gorshkov, A. P., E-mail: gorskovap@phys.unn.ru; Karpovich, I. A.; Pavlova, E. D.; Kalenteva, I. L. [Lobachevsky State University of Nizhny Novgorod (Russian Federation)

2012-02-15T23:59:59.000Z

374

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures  

E-Print Network (OSTI)

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures, U.S.A. ABSTRACT Characterization of operational AlGaInN heterostructure light emitting diodes (LEDs the device lifetime in a non-destructive mode. INTRODUCTION Group ­ III nitride light emitting diodes (LEDs

Wetzel, Christian M.

375

Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells  

Science Conference Proceedings (OSTI)

Exciton photoluminescence spectra, photoluminescence excitation spectra, and magnetophotoluminescence spectra of single (GaAs/AlGaAs/ZnMnSe) and double (GaAs/AlGaAs/ZnSe/ZnCdMnSe) heterovalent quantum wells formed by molecular beam epitaxy are studied. It is shown that the exciton absorption spectrum of such quantum wells mainly reproduces the resonant exciton spectrum expected for usual quantum wells with similar parameters, while the radiative exciton recombination have substantial distinctions, in particular the additional localization mechanism determined by defects generated by heterovalent interface exists. The nature of these localization centers is not currently clarified; their presence leads to broadening of photoluminescence lines and to an increase in the Stokes shift between the peaks of luminescence and absorption, as well as determining the variation in the magnetic g factor of bound exciton complexes.

Toropov, A. A., E-mail: toropov@beam.ioffe.ru; Kaibyshev, V. Kh.; Terent'ev, Ya. V.; Ivanov, S. V.; Kop'ev, P. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

2011-02-15T23:59:59.000Z

376

Optical anisotropy of GaSb type-II nanorods on vicinal (111)B GaAs  

SciTech Connect

We form self-assembled GaSb type-II nanorods on a vicinal (111)B GaAs substrate by molecular beam epitaxy and study their optical anisotropy. The GaSb nanorods are elongated and aligned along the [-1 0 1] direction, where the average length, width, and height are about 84, 30, and 2.5 nm. In polarized photoluminescence (PL) measurements, the peak of the GaSb nanorods is observed at about 1.1 eV, where the PL intensity is largest for the [-1 0 1] polarization and smallest for the polarization perpendicular to it. The degree of polarization is more than 20% and depends on the recombination energy. By comparing with a theoretical model based on 4 x 4 Luttinger-Kohn Hamiltonian, we find that the experimental results are explained by considering the Sb/As inter-diffusion and the nanorod height distribution.

Kawazu, Takuya; Noda, Takeshi; Mano, Takaaki; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Akiyama, Yoshihiro [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya (Japan); Sakaki, Hiroyuki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya (Japan)

2011-12-05T23:59:59.000Z

377

EE9, MBE Grown InGaAsSbN/GaSb Single Quantum Wells for Mid ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

378

Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires  

SciTech Connect

Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on a Si substrate by molecular beam epitaxy are examined using a variety of optical characterization techniques, including cw- and time-resolved photoluminescence and optically detected magnetic resonance (ODMR). Superior optical quality of the structures is demonstrated based on the observation of intense emission from a single NW at room temperature. This emission is shown to originate from radiative transitions within N-related localized states. From ODMR, growth of GaP/GaNP NWs is also found to facilitate formation of complex defects containing a P atom at its core that act as centers of competing non-radiative recombination.

Dobrovolsky, A.; Stehr, J. E.; Chen, S. L.; Chen, W. M.; Buyanova, I. A. [Department of Physics, Chemistry and Biology, Linkoeping University, S-581 83 Linkoeping (Sweden); Kuang, Y. J. [Department of Physics, University of California, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Materials Science and Engineering, La Jolla, California 92093 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093 (United States)

2012-10-15T23:59:59.000Z

379

II3, 2?m Thick Device Quality GaN on Si(111) Using AlGaN Graded ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

380

JJ1, Internal Quantum Efficiency of Polar and Non-Polar GaInN/GaN ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods  

E-Print Network (OSTI)

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

2013-01-01T23:59:59.000Z

382

SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors  

Science Conference Proceedings (OSTI)

Hydrothermally grown SnO2 was integrated with AlGaN/GaN high electron mobility transistor (HEMT) sensor as the gate electrode for oxygen detection. The crystalline of the SnO2 was improved after annealing at 400 C. The grain growth kinetics of the SnO2 nanomaterials, together with the O2 gas sensing properties and sensing mechanism of the SnO2 gated HEMT sensors were investigated. Detection of 1% oxygen in nitrogen at 100 C was possible. A low operation temperature and low power consumption oxygen sensor can be achieved by combining the SnO2 films with the AlGaN/GaN HEMT structure

Hung, S.T. [Feng Chia University, Taichung, Taiwan; Chung, Chi-Jung [Feng Chia University, Taichung, Taiwan; Chen, Chin Ching [University of Florida, Gainesville; Lo, C. F. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

383

Building Technologies Office: About Emerging Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Emerging Technologies Emerging Technologies The Emerging Technologies team funds the research and development of cost-effective, energy-efficient building technologies within five years of commercialization. Learn more about the: Key Technologies Benefits Results Key Technologies Specific technologies pursued within the Emerging Technologies team include: Lighting: advanced solid-state lighting systems, including core technology research and development, manufacturing R&D, and market development Heating, ventilation, and air conditioning (HVAC): heat pumps, heat exchangers, and working fluids Building Envelope: highly insulating and dynamic windows, cool roofs, building thermal insulation, façades, daylighting, and fenestration Water Heating: heat pump water heaters and solar water heaters

384

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

LTCC multi-chip module LTCC multi-chip module A high density LTCC multi-chip module Electronic Packaging PDF format (150 kb) The Electronic Packaging technologies in the Thin Film, Vacuum, & Packaging Department are a resource for all aspects of microelectronic packaging. From design and layout to fabrication of prototype samples, the staff offers partners the opportunity for concurrent engineering and development of a variety of electronic packaging concepts. This includes assistance in selecting the most appropriate technology for manufacturing, analysis of performance characteristics and development of new and unique processes. Capabilities: Network Fabrication Low Temperature Co-Fired Ceramic (LTCC) Thick Film Thin Film Packaging and Assembly Chip Level Packaging MEMs Packaging

385

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Meso-Machining Meso-Machining PDF format (182 kb) Sandia's Micro-Electro Discharge Machine (Micro-EDM) (above). On the upper right inset is the Micro-EDM electode in copper that was made with the LIGA (electroforming) process. On the lower right inset is a screen fabricated into .006 inch kovar sheet using the Micro-EDM electrode. The walls of the screen are .002 inch wide by .006 inch deep. Meso-machining technologies being developed at Sandia National Laboratories will help manufacturers improve a variety of production processes, tools, and components. Meso-machining will benefit the aerospace, automotive, biomedical, and defense industries by creating feature sizes from the 1 to 50 micron range. Sandia's Manufacturing Science and Technology Center is developing the

386

Offshore Technology  

E-Print Network (OSTI)

This report, and the roadmapping exercise that produced it, is the result of a series of transparent workshops held across the nation. A wealth of information was produced to compliment internal sources like the Energy Information Administration. The active participation of the Department's stakeholders is greatly appreciated. Walter Rosenbusch, Director of the Minerals Management Service (MMS) deserves special recognition. His partnership, participation and input were instrumental to the success of this effort. I also would like to thank my friend Governor Mark White for his participation and support of this effort. In addition, I thank the following workshop chairs and moderators for their participation and contribution to the roadmapping efforts: Mary Jane Wilson, WZI, Inc.; Ron Oligney, Dr. Michael Economides, and Jim Longbottom, University of Houston; John Vasselli, Houston Advanced Research Center; and Art Schroeder, Energy Valley. This report, however, does not represent the end of such long-range planning by the Department, its national labs, and its stakeholders. Rather it is a roadmap for accelerating the journey into the ultradeepwater Western Gulf of Mexico. The development of new technologies and commercialization paths, discoveries by marine biologists, and the fluctuations of international markets will continue to be important influences. With that in mind, let the journey begin. Emil Pea Deputy Assistant Secretary for Natural Gas and Petroleum Technology OFFSHORE TECHNOLOGY ROADMAP FOR THE ULTRA-DEEPWATER GULF OF MEXICO U.S. Department of Energy Maximumhistm,183 oil product,0 ratd for Gulf of Mexico wells. Taller barsindicat higherproduct44 ratdu The dat show numerous deepwat, oil wells producedat significant2 higherrate tt ever seen in t, Gulf of ...

Roadmap For The; Deepwater Gulf; Of Mexico

2000-01-01T23:59:59.000Z

387

Free-running InGaAs/InP Avalanche Photodiode with Active Quenching for Single Photon Counting at Telecom Wavelengths  

E-Print Network (OSTI)

We present an InGaAs/InP avalanche photodiode with an active quenching circuit on an ASIC (application specific integrated circuit) that is capable of operating in both gated and free-running modes. The 1.6mm2 ASIC chip is fabricated using CMOS (complementary metal oxide semiconductor) technology guaranteeing long-term stability, reliability and compactness. In the free-running mode we find a single photon detection efficiency of 10% with <2kHz of noise.

R. T. Thew; D. Stucki; J-D. Gautier; A. Rochas; H. Zbinden

2008-01-25T23:59:59.000Z

388

Testing technology  

SciTech Connect

This bulletin from Sandia National Laboratories presents current research highlights in testing technology. Ion microscopy offers new nondestructive testing technique that detects high resolution invisible defects. An inexpensive thin-film gauge checks detonators on centrifuge. Laser trackers ride the range and track helicopters at low-level flights that could not be detected by radar. Radiation transport software predicts electron/photon effects via cascade simulation. Acoustic research in noise abatement will lead to quieter travelling for Bay Area Rapid Transport (BART) commuters.

Not Available

1993-10-01T23:59:59.000Z

389

Elimination of charge-enhancement effects in GaAs FETs with a low-temperature grown GaAs buffer layer  

Science Conference Proceedings (OSTI)

The use of low temperature grown GaAs (LT GaAs) buffer layer in GaAs FETs is shown via computer simulation and experimental measurement to reduce ion-induced charge collection by two to three orders of magnitude. This reduction in collected charge is associated with the efficient reduction of charge-enhancement mechanisms in the FETs. Error rate calculations indicate that the soft error rate of LT GaAs integrated circuits will be reduced by several orders of magnitude when compared to conventional FET-based GaAs ICs.

McMorrow, D.; Weatherford, T.R.; Curtice, W.R.; Knudson, A.R.; Buchner, S.; Melinger, J.S.; Tran, L.H.; Campbell, A.B. [Naval Research Lab., Washington, DC (United States)

1995-12-01T23:59:59.000Z

390

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network (OSTI)

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

391

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes  

SciTech Connect

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

2010-01-15T23:59:59.000Z

392

CC2, Two-Dimensional Electron Gas in In X Al 1-X N/Aln/GaN ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

393

FEMP/NTDP Technology Focus New Technology  

E-Print Network (OSTI)

FEMP/NTDP Technology Focus New Technology Demonstration Program Technology Focus FEMPFederal Energy their decision making process relative to energy management systems design, specification, procurement. Future topics will concentrate on more practical aspects including applications software, product

394

Strain relaxation in GaN/Al{sub x}Ga{sub 1-x}N superlattices grown by plasma-assisted molecular-beam epitaxy  

SciTech Connect

We have investigated the misfit relaxation process in GaN/Al{sub x}Ga{sub 1-x}N (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 10{sup 8} cm{sup -2} to 2 x 10{sup 9} cm{sup -2}. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 10{sup 10} cm{sup -2}. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

Kotsar, Y.; Bellet-Amalric, E.; Das, A.; Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 Rue des Martyrs, 38054 Grenoble cedex 9 (France); Doisneau, B. [SIMaP, Grenoble INP, Domaine Universitaire, BP 75, 38402 Saint Martin d'Heres (France); Sarigiannidou, E. [LMGP, Grenoble INP, 3 Parvis Louis Neel, BP 257, 38016 Grenoble cedex 1 (France)

2011-08-01T23:59:59.000Z

395

Hydrogen Technologies Group  

DOE Green Energy (OSTI)

The Hydrogen Technologies Group at the National Renewable Energy Laboratory advances the Hydrogen Technologies and Systems Center's mission by researching a variety of hydrogen technologies.

Not Available

2008-03-01T23:59:59.000Z

396

Emerging Technologies Program  

NLE Websites -- All DOE Office Websites (Extended Search)

2013 Building Technologies Office Program Peer Review 2 | Building Technologies Office eere.energy.gov How ET Fits into BTO Research & Development * Develop technology roadmaps *...

397

Technology acceptance in organizations.  

E-Print Network (OSTI)

??New technology has changed how people do business. With rapid development of technology, it has been difficult for businesses and organizations to successfully implement technology (more)

Stewart, Laurie

2013-01-01T23:59:59.000Z

398

Building Technologies Office: Events  

NLE Websites -- All DOE Office Websites (Extended Search)

Office: Events on Twitter Bookmark Building Technologies Office: Events on Google Bookmark Building Technologies Office: Events on Delicious Rank Building Technologies...

399

Technology and the Box  

E-Print Network (OSTI)

its explorations of technology in partnership with radicalcrowd our daily life. Technology, like the term box, cancommon understanding of technology though, is not as a

Maitland, Padma

2013-01-01T23:59:59.000Z

400

Phonon Knudsen flow in GaAs/AlAs superlattices  

DOE Green Energy (OSTI)

The measured in-plane thermal conductivity, {delta}{sub SL} of GaAs/AlAs superlattices with even moderate layer thicknesses are significantly smaller than the weighted average, {delta}{sub l} = 67 W/Km, of the bulk GaAs and AlAs conductivities. One expects a suppression of the thermal conductivity to that of an actual Al{sub 0.5}Ga{sub 0.5}As alloy when the thickness of the GaAs and AlAs layers approaches that of a single monolayer. However, the observed superlattice thermal conductivity remains suppressed even at layer thickness {approx_gt} 10 nm. The low thermal conductivities, and very high mobilities, make n-doped GaAs/AlAs superlattices attractive possibilities for thermoelectric devices. With Molecular-Beam-Epitaxial grown GaAs/AlAs superlattices one can expect the individual GaAs and AlAs layers to be extremely clean. Defect and/or alloy scattering is limited to be near the heterostructure interfaces. The authors estimate the room-temperature phonon mean-free-path to be 42 (22) nm for the longitudinal (transverse) mode and thus comparable to or smaller than the layer thicknesses. Thus they expect an important phonon scattering at the interfaces. They study this phonon scattering at the superlattice interfaces assuming a Knudsen flow characterized by diffusive scattering. The solid curve in the figure shows the Knudsen-flow theory estimated for the superlattice thermal conductivity which shows a significant reduction when the layer thickness is shorter than the estimated phonon mean free paths.

Hyldgaard, P.; Mahan, G.D. [Oak Ridge National Lab., TN (United States). Solid State Div.]|[Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy

1995-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

High Voltage GaN Schottky Rectifiers  

SciTech Connect

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25T23:59:59.000Z

402

Technology Transfer: Success Stories: Licensed Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Licensed Technologies Licensed Technologies Here are some of our licensees and the technologies they are commercializing; see our Start-Up Company page for more of our technology licenses. Company (Licensee) Technology Life Technologies Corp. Cell lines for breast cancer research Bristol Myers Squibb; Novartis; Plexxikon Inc.; Wyeth Research; GlaxoSmithKline; Johnson & Johnson; Boehringer Ingelheim Pharmaceuticals, Inc.; Genzyme Software for automated macromolecular crystallography Shell International Exploration and Production; ConnocoPhillips Company; StatOil ASA; Schlumburger Technology Corportation; BHP Billiton Ltd.; Chevron Energy Technology Company; EniTecnologie S.p.A. Geo-Hydrophysical modeling software Microsoft Home Energy Saver software distribution Kalinex Colorimetric bioassay

403

Idaho National Laboratory - Technology Transfer - Technologies ...  

Idaho National Laboratory Technologies Available for Licensing ... Environmental Flow-Through Reactor for the In Situ Assessment of Remediation Technologies in Vadose ...

404

Solar Energy Technologies Program Technology Overview  

Science Conference Proceedings (OSTI)

New fact sheets for the DOE Office of Power Technologies (OPT) that provide technology overviews, description of DOE programs, and market potential for each OPT program area.

Not Available

2001-11-01T23:59:59.000Z

405

NETL: Technology Transfer - History of Technology Transfer  

History of Technology Transfer Technology transfer differs from providing services or products (e.g., acquisition) and financial assistance (e.g., ...

406

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Films Thin Films PDF format (189 kb) Multi Layer Thin Films Multi Layer Thin Films Planetary Sputtering SystemsPlanetary Sputtering Systems Planetary Sputtering Systems The Thin Film laboratory within Manufacturing Science & Technology provides a variety of vapor deposition processes and facilities for cooperative research and development. Available capabilities include electron beam evaporation, sputter deposition, reactive deposition processes, atomic layer deposition (ALD) and specialized techniques such as focused ion beam induced chemical vapor deposition. Equipment can be reconfigured for prototyping or it can be dedicated to long-term research, development and manufacturing. Most sputter and evaporative deposition systems are capable of depositing multiple materials.

407

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Molding, Thermoforming & Compounding Molding, Thermoforming & Compounding PDF format (89 kb) The Manufacturing Science & Technology Center helps customers choose the best materials and techniques for their product by providing a variety of conformal coatings, thermoforming, and compounding materials using established or custom designed processes. The department provides consulting services for injection molding and rubber compounding projects. Capabilities: Thermoforming: Processing thermoplastics such as polycarbonate, polymethyl methacrylate, polypropylene polystyrene, and ABS; producing holding trays, protective caps, and custom covers Injection Molding Consultation: Designing your part to be injection molded, helping you choose the best material for your application, and supporting your interface with injection molding companies

408

Testing of ethylene propylene seals for the GA-4/GA-9 casks  

SciTech Connect

The primary O-ring seal of the GA-4 and GA-9 casks was tested for leakage with a full-scale mockup of the cask lid and flange. Tests were performed at temperatures of ambient, {minus}41{degrees}, 121{degrees}, and 193{degrees}C. Shim plates between the lid and flange simulated gaps caused by thermal distortion. The testing used a helium mass spectrometer leak detector (MSLD). Results showed that the primary seal was leaktight for all test conditions. Helium permeation through the seal began in 13--23 minutes for the ambient tests and in 1--2 minutes for the tests at elevated temperatures. After each test several hours of the pumping were typically required to reduce the MSLD background reading to an acceptable level for the next test, indicating that the seal had become saturated with helium. To verify that the test results showed permeation and not real leakage, several response checks were conducted in which a calibrated leak source was inserted in the detector line near the seal. When the leak source was activated the detector responded within seconds.

Boonstra, R.H.

1993-08-01T23:59:59.000Z

409

Technology Name  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Development Development DE-EM0000598 D&D KM-IT For the deployment of Information Technology for D&D knowledge management Page 1 of 2 Florida International University Florida D&D Knowledge Management Information Tool Challenge Deactivation and decommissioning (D&D) work is a high priority across the DOE Complex. The D&D community associated with the various DOE sites has gained extensive knowledge and experience over the years. To prevent the D&D knowledge and expertise from being lost over time an approach is needed to capture and maintain this valuable information in a universally available and easily usable system. Technical Solution The D&D KM-IT serves as a centralized repository

410

Nanostructuring of silicon substrates for the site-controlled growth of GaAs/In0.15Ga0.85As/GaAs nanostructures  

Science Conference Proceedings (OSTI)

We report the optimization of electron beam lithography and inductively coupled plasma (ICP) dry etching processes to fabricate pre-patterned Si (100) substrates with sub-100nm holes with controlled size and shape. An efficient in situ cleaning sequence ... Keywords: Electron beam lithography, ICP dry etching, InGaAs quantum dots, MBE growth, Nanostructuring of silicon

Muhammad Usman; Tariq Alzoubi; Mohamed Benyoucef; Johann Peter Reithmaier

2012-09-01T23:59:59.000Z

411

EM Reviews Budget, Technology Challenges with Advisory Board | Department  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Reviews Budget, Technology Challenges with Advisory Board Reviews Budget, Technology Challenges with Advisory Board EM Reviews Budget, Technology Challenges with Advisory Board June 21, 2013 - 12:00pm Addthis Associate Principal Deputy Assistant Secretary Alice Williams, left, and EM Senior Advisor Dave Huizenga, center, talk with Environmental Management Advisory Board Vice-Chair Dennis Ferrigno at the recent board meeting. Associate Principal Deputy Assistant Secretary Alice Williams, left, and EM Senior Advisor Dave Huizenga, center, talk with Environmental Management Advisory Board Vice-Chair Dennis Ferrigno at the recent board meeting. AUGUSTA, Ga. - EM leadership met with the Environmental Management Advisory Board (EMAB) recently to discuss a range of topics, from EM's fiscal year 2014 budget request to its technology challenges.

412

NETL: Clean Coal Technology Demonstration Program (CCTDP) - Round 2  

NLE Websites -- All DOE Office Websites (Extended Search)

2 2 Environmental Control Technologies - SO2 Control Technologies Demonstration of Innovative Applications of Technology for the CT-121 FGD Process - Project Brief [PDF-265KB] Southern Company Services, Newnan, GA PROGRAM PUBLICATIONS Final Reports Demonstration of Innovative Applications of Technology for the CT-121 FGD Process, Final Report (Jan 1997) Volume 1, Executive Summary [PDF-4.6MB] Volume 2, Operation [PDF-32.8MB] Volume 2 Appendices [PDF-6.3MB] Volume 3, Equipment Vol 3a, Materials and Maintenance [PDF-34.6MB] Vol 3b, Instrumentation and Control [PDF-1.2MB] Vol 3c, Materials Test & Evaluation Program [PDF-28.2MB] Volume 4, Gypsum Stacking &Byproduct Evaluation [PDF-11.3MB] Volume 5, Environmental Monitoring Plan [PDF-3MB] Volume 5 Appendices [PDF-5.8MB]

413

Partnering Today: Technology Transfer Highlights  

on fossil fuels. Mike Simon, GA Director, Commercial Business Development TOP500. Title: 2007 LLNL Layout 11_18_07 CS2.ai Author: Daniel Schumaker Created Date:

414

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

415

Light extraction in individual GaN nanowires on Si for LEDs  

E-Print Network (OSTI)

GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

Zhou, Xiang

416

High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report the highest mobility values above 2000 cm{sup 2}/Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Inagaki, Makoto [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Aichi (Japan); Yamaguchi, Masafumi [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Aichi (Japan)

2012-11-26T23:59:59.000Z

417

Engineering Science & Technology Division  

NLE Websites -- All DOE Office Websites (Extended Search)

Building Technologies Cooling, Heating and Power Technologies Electronics and Communications Industrial Energy Efficiency Robotics and Energetic Systems Sensors & Signal...

418

Magnesium Technology 2009  

Science Conference Proceedings (OSTI)

Feb 1, 2009 ... Print Book and CD-ROM: Magnesium Technology 2007. Hardcover book and CD set: Magnesium Technology 2008...

419

Technology Commercialization and Partnerships |  

Staff Directory; BNL People Technology Commercialization & Partnerships. Home; For BNL Inventors; ... a nonprofit applied science and technology organization. ...

420

Building Technologies Office: Contacts  

NLE Websites -- All DOE Office Websites (Extended Search)

Office: Contacts on Twitter Bookmark Building Technologies Office: Contacts on Google Bookmark Building Technologies Office: Contacts on Delicious Rank Building...

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they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


421

Building Technologies Office: Webmaster  

NLE Websites -- All DOE Office Websites (Extended Search)

Office: Webmaster on Twitter Bookmark Building Technologies Office: Webmaster on Google Bookmark Building Technologies Office: Webmaster on Delicious Rank Building...

422

Technology Ventures Corporation  

NLE Websites -- All DOE Office Websites (Extended Search)

Ventures Corporation Technology Ventures Corporation (TVC) identifies technologies with commercial potential, coordinates the development of business and management capabilities,...

423

Magnesium Technology Symposium  

Science Conference Proceedings (OSTI)

Conference Tools for Materials Science & Technology 2013 ... Scope, The magnesium technology symposium will cover a broad spectrum of theoretical and...

424

SRNL - Technology Transfer - Home  

Technology Transfer. Research and Development Savannah River Nuclear Solutions, LLC (SRNS) scientists and engineers develop technologies designed to improve ...

425

Materials Technology @ TMS  

Science Conference Proceedings (OSTI)

Mar 3, 2010 ... This program focuses on developing energy storage technologies to ... Ultimately , technologies developed through this program will be...

426

Idaho National Laboratory - Technology Transfer - Technologies ...  

Idaho National Laboratory Technologies Available for Licensing ... Manufacturing Electrochemical Impedance Spectroscopy. Related Patents: 7088115

427

Idaho National Laboratory - Technology Transfer - Technologies ...  

Idaho National Laboratory Technologies Available for Licensing ... Manufacturing Welding Apparatus and Methods for Using Ultrasonic Sensing

428

Idaho National Laboratory - Technology Transfer - Technologies ...  

Idaho National Laboratory Technologies Available for Licensing ... Manufacturing Realtime Acoustic Imaging Microscope. Related Patents: 7123364; 6836336

429

Idaho National Laboratory - Technology Transfer - Technologies ...  

Idaho National Laboratory Technologies Available for Licensing ... Manufacturing Spray Rolling Metal. Related Patents: 6074194; 5718863

430

NREL: Technology Transfer - Technology Partnership Agreements  

NLE Websites -- All DOE Office Websites (Extended Search)

Technology Partnership Agreements Technology Partnership Agreements Through technology partnership agreements, NREL provides partners with technical support to help commercialize and deploy energy technologies and products. We do not fund any projects under a technology partnership agreement. The partner provides the necessary resources and covers our costs of providing technical services. NREL does provide funding opportunities through competitively placed contracts. For more information, see our business opportunities. Process The technology partnership agreement process basically includes 11 steps. See the NREL Technology Partnership Agreement Process flowchart. We are committed to working through these steps in a timely manner. Experience suggests that the fastest means to reach an agreement is through

431

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Sol-Gel Glasses Sol-Gel Glasses PDF format (74 kb) Sol Gel Sol Gel Coating with Sol-Gel Glasses Coating with Sol-Gel Glasses The Manufacturing Science & Technology Center conducts process development and scale-up of ceramic and glass materials prepared by the sol-gel process. Sol-gel processing uses solutions prepared at low temperature rather than high temperature powder processing to make materials with controlled properties. A precursor sol-gel solution (sol) is either poured into a mold and allowed to gel or is diluted and applied to a substrate by spinning, dipping, spraying, electrophoresis, inkjet printing or roll coating. Controlled drying of the wet gel results in either a ceramic or glass bulk part or a thin film on a glass, plastic, ceramic or metal substrate.

432

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Ion Beam Manufacture Ion Beam Manufacture PDF format (113 kb) Example sine wave FIB sputtered into initially planar Si substrate Example sine wave FIB sputtered into initially planar Si substrate Sandia Manufacturing Science & Technology's Focused Ion Beam (FIB) laboratory provides an opportunity for research, development and prototyping. Currently, our scientists are developing methods for ion beam sculpting microscale tools, components and devices. This includes shaping of specialty tools such as end-mills, turning tools and indenters. Many of these have been used in ultra-precision machining DOE applications. Additionally, staff are developing the capability to ion mill geometrically-complex features and substrates. This includes the ability to sputter predetermined curved shapes of various symmetries and

433

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

3 foot diameter cyanate ester / fiberglass laminated antenna 3 foot diameter cyanate ester / fiberglass laminated antenna 3 foot diameter cyanate ester / fiberglass laminated antenna Composites PDF format (145 kb) Polymer composite materials are composed of fibers in an organic matrix and can be useful in applications that require a high strength-to-weight ratio. Sandia's MS&T staff will work with you from part design, through mold and tooling design, and on through fabrication. The department is capable of fabricating small and large complex parts and will help you choose the most economical technique for your composite needs. Capabilities: The Center has a comprehensive program on the mechanical engineering design, tooling and fixturing, lay-out, complete processing of the composite structure, and technology transfer of composite structures for a

434

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Laser Engineered Net Shaping(tm) Laser Engineered Net Shaping(tm) PDF format (140 kb) picture of processing blade Processing Blade Sandia National Laboratories has developed a new technology to fabricate three-dimensional metallic components directly from CAD solid models. This process, called Laser Engineered Net ShapingT (LENS®), exhibits enormous potential to revolutionize the way in which metal parts, such as complex prototypes, tooling, and small-lot production items, are produced. The process fabricates metal parts directly from the Computer Aided Design (CAD) solid models using a metal powder injected into a molten pool created by a focused, high-powered laser beam. Simultaneously, the substrate on which the deposition is occurring is scanned under the beam/powder interaction zone to fabricate the desired

435

Black-body radiation shift of the Ga$^{+}$ clock transition  

E-Print Network (OSTI)

The blackbody radiation shift of the Ga$^+$ $4s^2 \\ ^1S^e_0 \\to 4s4p \\ ^3P^o_0$ clock transition is computed to be $-$$0.0140 \\pm 0.0048$ Hz at 300 K. The small shift is consistent with the blackbody shifts of the clock transitions of other group III ions which are of a similar size. The polarizabilities of the Ga$^+$ $4s^2 \\ ^1S^e_0$, $4s4p \\ ^3P^o_0$, and $4s4p \\ ^1P^o_1$ states were computed using the configuration interaction method with an underlying semi-empirical core potential. A byproduct of the analysis involved large scale calculations of the low lying spectrum and oscillator strengths of the Ga$^{2+}$ ion.

Cheng, Yongjun

2013-01-01T23:59:59.000Z

436

CMM Technology  

SciTech Connect

This project addressed coordinate measuring machine (CMM) technology and model-based engineering. CMM data analysis and delivery were enhanced through the addition of several machine types to the inspection summary program. CMM hardware and software improvements were made with the purchases of calibration and setup equipment and new model-based software for the creation of inspection programs. Kansas City Plant (KCP) personnel contributed to and influenced the development of dimensional metrology standards. Model-based engineering capabilities were expanded through the development of software for the tolerance analysis of piece parts and for the creation of model-based CMM inspection programs and inspection plans and through the purchase of off-the-shelf software for the tolerance analysis of mechanical assemblies. An obsolete database application used to track jobs in Precision Measurement was replaced by a web-based application with improved query and reporting capabilities. A potential project to address the transformation of the dimensional metrology enterprise at the Kansas City Plant was identified.

Ward, Robert C.

2008-10-20T23:59:59.000Z

437

Building Technologies Office: Better Buildings Challenge  

NLE Websites -- All DOE Office Websites (Extended Search)

Challenge Challenge Photo of the Atlanta skyline on a sunny day, including the gold dome of the state capitol. The City of Atlanta has committed 16 million square feet of public and private space to substantive upgrades as part of the Better Buildings Challenge. Credit: iStockphoto The Better Buildings Challenge is part of the U.S. Department of Energy's (DOE's) Better Buildings Initiative, which aims to make U.S. commercial and industrial buildings at least 20% more efficient during the next decade. To achieve this aggressive target, DOE is working with public and private sector partners that commit to being leaders in energy efficiency. These partners will implement energy savings practices that improve energy efficiency and save money, and will showcase effective strategies and the results of their efforts.

438

Aug. 8-9, 2006 HAPL meeting, GA Open Discussion on Advanced Armor  

E-Print Network (OSTI)

Aug. 8-9, 2006 HAPL meeting, GA 1 Open Discussion on Advanced Armor Concepts Moderated by A. René in case the W armor does not work. #12;Aug. 8-9, 2006 HAPL meeting, GA 3 Roman Aquaduct at Pont du Gard, Provence #12;Aug. 8-9, 2006 HAPL meeting, GA 4 Possible Advanced Armor Options Include: · Engineered

Raffray, A. René

439

Current injection efficiency of InGaAsN quantum-well lasers Nelson Tansua  

E-Print Network (OSTI)

Current injection efficiency of InGaAsN quantum-well lasers Nelson Tansua Department of Electrical-threshold current injection efficiency of quantum well QW lasers is clarified. The analysis presented here is applied to the current injection efficiency of 1200 nm emitting InGaAs and 1300 nm emitting InGaAsN QW

Gilchrist, James F.

440

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs  

E-Print Network (OSTI)

The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate ...

Piner, Edwin L.

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a  

E-Print Network (OSTI)

is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

Okamoto, Koichi

442

TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron  

E-Print Network (OSTI)

neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

443

Vertically aligned GaN nanotubes - Fabrication and current image analysis  

Science Conference Proceedings (OSTI)

In this work, we present a one step formation method of nanotubes on GaN film, and then map out local current of nanotubes. GaN nanotubes were formed by inductively coupled plasma (ICP) etching and found that tops of these nanotubes were hexagonal with ... Keywords: C-AFM, FESEM, GaN, ICP, Nanotubes

Shang-Chao Hung; Yan-Kuin Su; Shoou-Jinn Chang; Y. H. Chen

2006-11-01T23:59:59.000Z

444

Luminescence Enhancement in InGaN and ZnO by Water Vapor ...  

Science Conference Proceedings (OSTI)

Dependence of Ag/In Ratio of AgInS2 Crystals Grown by Hot-Press Method ... Analysis of Temperature Characteristics of InGaP/InGaAs/Ge Triple-Junction Solar Cell ... Luminescence Enhancement in InGaN and ZnO by Water Vapor Remote...

445

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

446

Epitaxial EuO thin films on GaAs  

SciTech Connect

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57 deg., a significant remanent magnetization, and a Curie temperature of 69 K.

Swartz, A. G.; Ciraldo, J.; Wong, J. J. I.; Li Yan; Han Wei; Lin Tao; Shi, J.; Kawakami, R. K. [Department of Physics and Astronomy, University of California, Riverside, California 92521 (United States); Mack, S.; Awschalom, D. D. [Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106 (United States)

2010-09-13T23:59:59.000Z

447

AlP/GaP distributed Bragg reflectors  

SciTech Connect

Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

2013-07-15T23:59:59.000Z

448

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

449

Electron Hall Mobility in GaAsBi  

Science Conference Proceedings (OSTI)

We present measurements of the electron Hall mobility in n-type GaAs{sub 1-x}Bi{sub x} epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration ({ge} 1.6%) some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependent Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism.

Kini, R. N.; Bhusal, L.; Ptak, A. J.; France, R.; Mascarenhas, A.

2009-01-01T23:59:59.000Z

450

Analyzing the growth of In{sub x}Ga{sub 1-x}N/GaN superlattices in self-induced GaN nanowires by x-ray diffraction  

Science Conference Proceedings (OSTI)

Self-induced GaN nanowires are grown by plasma-assisted molecular beam epitaxy, with In{sub x}Ga{sub 1-x}N quantum wells inserted to form an axial superlattice. From the {omega}-2{theta} scans of a laboratory x-ray diffraction experiment, we obtain the superlattice period, the thickness of the quantum wells, and the In content in this layer. The axial growth rate of the In{sub x}Ga{sub 1-x}N quantum wells is significantly enhanced, which we attribute to increased Ga diffusion along the nanowire sidewalls in the presence of In.

Woelz, M.; Kaganer, V. M.; Brandt, O.; Geelhaar, L.; Riechert, H.

2011-06-27T23:59:59.000Z

451

Deep-Level Transient Spectroscopy in InGaAsN Lattice-Matched to GaAs: Preprint  

Science Conference Proceedings (OSTI)

This conference paper describes the deep-level transient spectroscopy (DLTS) measurements have been performed on the quaternary semiconductor InGaAsN. A series of as-grown, metal-organic chemical vapor deposited samples having varying composition were grown and measured. A GaAs sample was used as a baseline for comparison. After adding only In to GaAs, we did not detect significant additional defects; however, adding N and both N and In led to larger hole-trap peaks and additional electron-trap peaks in the DLTS data. The samples containing about 2% N, with and without about 6% In, had electron traps with activation energies of about 0.2 and 0.3 eV. A sample with 0.4% N had an electron trap with an activation energy of 0.37 eV.

Johnston, S. W.; Ahrenkiel, R. K.; Friedman, D. J.; Kurtz, S. R.

2002-05-01T23:59:59.000Z

452

Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets  

Science Conference Proceedings (OSTI)

Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

Chu, Kuei-Yi [National Cheng-Kung University, Institute of Microelectronics, Department of Electrical Engineering (China); Chiang, Meng-Hsueh, E-mail: mhchiang@niu.edu.tw; Cheng, Shiou-Ying, E-mail: sycheng@niu.edu.tw [National II an University, Department of Electronic Engineering (China); Liu, Wen-Chau [National Cheng-Kung University, Institute of Microelectronics, Department of Electrical Engineering (China)

2012-02-15T23:59:59.000Z

453

272 JOURNAL OF DISPLAY TECHNOLOGY, VOL. 9, NO. 4, APRIL 2013 First-Principle Electronic Properties of Dilute-As  

E-Print Network (OSTI)

structure, dilute-As GaNAs, First-Principle, lasers, light-emitting diodes. I. INTRODUCTION GROUP III-Nitride compound plays a critical role in the optoelectronic applications such as light-emitting diodes (LEDs for the laser and light emitting diode applications. Due to the technological importance that is potentially

Gilchrist, James F.

454

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. [Research Triangle Inst., Research Triangle Park, NC (United States)

1993-01-01T23:59:59.000Z

455

Fusion technology development. Annual report, October 1, 1994--September 30, 1995  

SciTech Connect

In FY95, the General Atomics (GA) Fusion Group made significant contributions to the technology needs of the magnetic fusion program. The work is reported in the following sections on Fusion Power Plant Studies (Section 2), DiMES (Section 3), SiC Composite Studies (Section 4), Magnetic Probe (Section 5) and RF Technology (Section 6). Meetings attended and publications are listed in their respective sections. The overall objective of GA`s fusion technology research is to develop the technologies necessary for fusion to move successfully from present-day physics experiments to ITER and other next-generation fusion experiments, and ultimately to fusion power plants. To achieve this overall objective, they carry out fusion systems design studies to evaluate the technologies needed for next-step experiments and power plants, and they conduct research to develop basic knowledge about these technologies, including plasma technologies, fusion nuclear technologies, and fusion materials. They continue to be committed to the development of fusion power and its commercialization by US industry.

1996-08-01T23:59:59.000Z

456

Plasma technology directory  

SciTech Connect

The Plasma Technology Directory has two main goals: (1) promote, coordinate, and share plasma technology experience and equipment within the Department of Energy; and (2) facilitate technology transfer to the commercial sector where appropriate. Personnel are averaged first by Laboratory and next by technology area. The technology areas are accelerators, cleaning and etching deposition, diagnostics, and modeling.

Ward, P.P.; Dybwad, G.L.

1995-03-01T23:59:59.000Z

457

AlGaAsSb buffer/barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability  

Science Conference Proceedings (OSTI)

Keywords: AlGaAsSb, Hall elements, InAs, Sb, buffer/barriers, deep quantum well, field effect transistors, reliability

S. Miya; S. Muramatsu; N. Kuze; K. Nagase; T. Iwabuchi; A. Ichii; M. Ozaki; I. Shibasaki

1996-03-01T23:59:59.000Z

458

NETL Technologies Recognized for Technology Development, Transfer |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Recognized for Technology Development, Transfer Recognized for Technology Development, Transfer NETL Technologies Recognized for Technology Development, Transfer October 25, 2013 - 1:31pm Addthis Did you know? The Federal Laboratory Consortium for Technology Transfer is the nationwide network of federal laboratories that provides the forum to develop strategies and opportunities for linking laboratory mission technologies and expertise with the marketplace. In consonance with the Federal Technology Transfer Act of 1986 and related federal policy, the mission of the FLC is to promote and facilitate the rapid movement of federal laboratory research results and technologies into the mainstream of the U.S. economy. Learn more about the FLC. A great invention that sits on a shelf, gathering dust, benefits no one.

459

NREL: Technology Transfer - Technologies Available for Licensing  

NLE Websites -- All DOE Office Websites (Extended Search)

Technologies Available for Licensing Technologies Available for Licensing Photo of NREL scientist in the NREL Hydrogen Lab. NREL's scientists and engineers develop award-winning technologies available for licensing. NREL scientists and engineers produce breakthrough and award-winning renewable energy and energy efficiency technologies that are available for licensing. We have many licensing opportunities for NREL-developed technologies, including our featured LED technologies. To see all our technologies available for licensing, visit the EERE Innovation Portal and search for NREL. Learn about our licensing agreement process. Contact For more information about licensing NREL-developed technologies, contact Eric Payne, 303-275-3166. Ombuds NREL strives to quickly resolve any issue or concern you may have regarding

460

National Energy Technology Laboratory National Energy Technology...  

NLE Websites -- All DOE Office Websites (Extended Search)

4U.S. Department of Energy U.S. Department of Energy National Energy Technology Laboratory National Energy Technology Laboratory Office of Public Affairs Office of Public Affairs...

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Characterization and device performance of (AgCu)(InGa)Se2 absorber layers  

DOE Green Energy (OSTI)

The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only control samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and ? = 13.0%.

Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

2009-06-08T23:59:59.000Z

462

Using GA-ANN algorithm to predicate coal bump energy  

Science Conference Proceedings (OSTI)

A GA-ANN network was constructed for preidcating coal bump energy, based on the 300 training samples form simulated results with PFC2D software for different coal particle stiffness. It was tested that the average relative error of fitted-output value ... Keywords: artificial neural network, coal bump, energy, genetic algorithm, predication

Yunliang Tan; Tongbin Zhao; Zhigang Zhao

2009-06-01T23:59:59.000Z

463

Development of ZnO:Ga as an Ultrafast Scintillator  

DOE Green Energy (OSTI)

We report on several methods for synthesizing the ultra-fast scintillator ZnO(Ga), and measurements of the resulting products. This material has characteristics that make it an excellent alpha detector for tagging the time and direction of individual neutrons produced by t-d and d-d neutron generators (associated particle imaging). The intensity and decay time are strongly dependent on the method used for dopant incorporation. We compare samples made by diffusion of Ga metal to samples made by solid state reaction between ZnO and Ga2O3 followed by reduction in hydrogen. The latter is much more successful and has a pure, strong near-band-edge fluorescence and an ultra-fast decay time of the x-ray-excited luminescence. The luminescence increases dramatically as the temperature is reduced to 10K. We also present results of an alternate low-temperature synthesis that produces luminescent particles with a more uniform size distribution. We examine possible mechanisms for the bright near-band-edge scintillation and favor the explanation that it is due to the recombination of Ga3+ donor electrons with ionization holes trapped on H+ ion acceptors.

Bourret-Courchesne, E.D.; Derenzo, S.E.; Weber, M.J.

2008-12-10T23:59:59.000Z

464

Properties of H, O and C in GaN  

DOE Green Energy (OSTI)

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

1996-04-01T23:59:59.000Z

465

Optimization on Seawater Desulfurization Efficiency Based on LSSVM-GA  

Science Conference Proceedings (OSTI)

Seawater flue gas Desulfurization (SFGD) was adopted in many coal-fired power plants of littoral for its low cost and high desulfurization efficiency. Operating Parameters would seriously affect SFGD efficiency, the desulfurization efficiency can be ... Keywords: SFGD, desulfurization efficiency, LSSVM, GA, optimization

Liu Ding-ping; Li Xiao-wei

2010-10-01T23:59:59.000Z

466

Low cost high power GaSB photovoltaic cells  

Science Conference Proceedings (OSTI)

High power density and high capacity factor are important attributes of a thermophotovoltaics (TPV) system and GaSb cells are enabling for TPV systems. A TPV cogeneration unit at an off grid site will compliment solar arrays producing heat and electricity on cloudy days with the solar arrays generating electricity on sunny days. Herein

Lewis M. Fraas; Han X. Huang; Shi-Zhong Ye; She Hui; James Avery; Russell Ballantyne

1997-01-01T23:59:59.000Z

467

Low cost high power GaSb thermophotovoltaic cells  

Science Conference Proceedings (OSTI)

High power density and high capacity factor are important attributes of a TPV system and GaSb cells are enabling for TPV systems. A TPV cogeneration unit at an off grid site will compliment solar arrays producing heat and electricity on cloudy days with the solar arrays generating electricity on sunny days. Herein

Lewis M. Fraas; Han X. Huang; Shi-Zhong Ye; James Avery; Russell Ballantyne

1997-01-01T23:59:59.000Z

468

Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se2 absorber layers  

DOE Green Energy (OSTI)

(Ag,Cu)(In,Ga)Se2 thin films have been deposited by elemental co-evaporation over a wide range of compositions and their optical properties characterized by transmission and reflection measurements and by relative shift analysis of quantum efficiency device measurements. The optical bandgaps were determined by performing linear fits of (?h?)2 vs. h?, and the quantum efficiency bandgaps were determined by relative shift analysis of device curves with fixed Ga/(In+Ga) composition, but varying Ag/(Cu+Ag) composition. The determined experimental optical bandgap ranges of the Ga/(In+Ga) = 0.31, 0.52, and 0.82 groups, with Ag/(Cu+Ag) ranging from 0 to 1, were 1.19-1.45 eV, 1.32-1.56 eV, and 1.52-1.76 eV, respectively. The optical bowing parameter of the different Ga/(In+Ga) groups was also determined.

Boyle, Jonathan; Hanket, Gregory; Shafarman, William

2009-06-09T23:59:59.000Z

469

Idaho National Laboratory - Technology Transfer - Technologies ...  

Idaho National Laboratory Technologies Available for Licensing ... Manufacturing Integrated Optical Sensor. Related Patents: 5275327. Contact: David R. Anderson

470

Idaho National Laboratory - Technology Transfer - Technologies ...  

Idaho National Laboratory Technologies Available for Licensing ... National Security Portable Tire Deflation Device. Related Patents: 7,641,417; 5507588

471

Idaho National Laboratory - Technology Transfer - Technologies ...  

Idaho National Laboratory Technologies Available for Licensing ... Materials Forming Aluminum Oxynitride. Related Patents: 7,459,122. Contact: Lisa Nate

472

Idaho National Laboratory - Technology Transfer - Technologies ...  

Idaho National Laboratory Technologies Available for Licensing ... National Security Electric Generator Protection. Related Patents: 7,453,674

473

Idaho National Laboratory - Technology Transfer - Technologies ...  

Idaho National Laboratory Technologies Available for Licensing ... Environmental Method and Apparatus Configured for Identification of a Material

474

Idaho National Laboratory - Technology Transfer - Technologies ...  

Idaho National Laboratory Technologies Available for Licensing ... National Security; Non-Nuclear Energy; Nuclear Energy; Robotics; Transportation;

475

Idaho National Laboratory - Technology Transfer - Technologies ...  

Idaho National Laboratory Technologies Available for Licensing ... Manufacturing Modular Friction Stir Welding Tool. Related Patents: 7,357,292

476

Idaho National Laboratory - Technology Transfer - Technologies ...  

Idaho National Laboratory Technologies Available for Licensing ... Materials Natural Adhesive Systems. Related Patents: 6987170. Contact: David R. Anderson

477

Living technology: Exploiting life's principles in technology  

Science Conference Proceedings (OSTI)

The concept of living technology---that is, technology that is based on the powerful core features of life---is explained and illustrated with examples from artificial life software, reconfigurable and evolvable hardware, autonomously self-reproducing ... Keywords: Living technology, World Wide Web, autonomous robot, protocell, scientific social responsibility, synthetic biology

Mark A. Bedau; John S. McCaskill; Norman H. Packard; Steen Rasmussen

2010-01-01T23:59:59.000Z

478

MSTC - Microsystems Science, Technology, and Components - RF...  

NLE Websites -- All DOE Office Websites (Extended Search)

band RF input and supplies N identical outputs (N4 or 8). SiGe, GaAs, GaN RFICs. Passive RF detectors - Pyroelectric microdetectors that produce a DC output proportional to...

479

Soap Manufacturing Technology  

Science Conference Proceedings (OSTI)

Soap producers as well as anyone with an interest in soap technology will benefit from the new AOCS Press Soap Manufacturing Technology book. Soap Manufacturing Technology Surfactants and Detergents aocs articles Detergents division divisions fabric

480

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

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481

Morgantown Energy Technology Center, technology summary  

Science Conference Proceedings (OSTI)

This document has been prepared by the DOE Environmental Management (EM) Office of Technology Development (OTD) to highlight its research, development, demonstration, testing, and evaluation activities funded through the Morgantown Energy Technology Center (METC). Technologies and processes described have the potential to enhance DOE`s cleanup and waste management efforts, as well as improve US industry`s competitiveness in global environmental markets. METC`s R&D programs are focused on commercialization of technologies that will be carried out in the private sector. META has solicited two PRDAs for EM. The first, in the area of groundwater and soil technologies, resulted in twenty-one contact awards to private sector and university technology developers. The second PRDA solicited novel decontamination and decommissioning technologies and resulted in eighteen contract awards. In addition to the PRDAs, METC solicited the first EM ROA in 1993. The ROA solicited research in a broad range of EM-related topics including in situ remediation, characterization, sensors, and monitoring technologies, efficient separation technologies, mixed waste treatment technologies, and robotics. This document describes these technology development activities.

Not Available

1994-06-01T23:59:59.000Z

482

Emerging Technologies Program  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Emerging Technologies Program Emerging Technologies Program Pat Phelan Program Manager patrick.phelan@ee.doe.gov (202)287-1906 April 2, 2013 Building Technologies Office Program Peer Review 2 | Building Technologies Office eere.energy.gov How ET Fits into BTO Research & Development * Develop technology roadmaps * Prioritize opportunities * Solicit and select innovative technology solutions * Collaborate with researchers * Solve technical barriers and test innovations to prove effectiveness * Measure and validate energy savings ET Mission: Accelerate the research, development and commercialization of emerging, high impact building technologies that are five years or less to market ready. 3 | Building Technologies Office eere.energy.gov

483

Hydropower Program Technology Overview  

DOE Green Energy (OSTI)

New fact sheets for the DOE Office of Power Technologies (OPT) that provide technology overviews, description of DOE programs, and market potential for each OPT program area.

Not Available

2001-10-01T23:59:59.000Z

484

Jefferson Lab Technology Transfer  

What is Technology Transfer at Jefferson Lab? The transfer of technology (intellectual property) developed at JLab to the private sector is an ...

485

Edison Systems Technology Documentation  

NLE Websites -- All DOE Office Websites (Extended Search)

Technology Documentation Systems Technology Documentation Downloads CrayXC30Networking.pdf | Adobe Acrobat PDF file Cray XC30 Networking SonexionBrochure.pdf | Adobe Acrobat PDF...

486

Success Stories: Symyx Technologies  

Start-Ups - Symyx Technologies, Inc. Revolutionizing Materials Discovery. Symyx Technologies, Inc. is at home in the heart of Silicon Valley. ...

487

Energy Basics: Geothermal Technologies  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

EERE: Energy Basics Geothermal Technologies Photo of steam pouring out of a geothermal plant. Geothermal technologies use the clean, sustainable heat from the Earth. Geothermal...

488

Technology Zones (Virginia)  

Energy.gov (U.S. Department of Energy (DOE))

Virginias 26 designated Technology Zones offer tax relief in the form of abatements, credits, deductions, deferrals, exemptions, or rebates. Local governments may designate technology zones to...

489

Technology Readiness Assessment Report  

Energy.gov (U.S. Department of Energy (DOE))

This document has been developed to guide individuals and teams that will be involved in conducting Technology Readiness Assessments (TRAs) and developing Technology Maturation Plans (TMPs) for the...

490

Technology Transfer: For Industry  

NLE Websites -- All DOE Office Websites (Extended Search)

Available Technologies Licensing Berkeley Lab Technologies Partnering with Berkeley Lab Contact Us Receive Customized Tech Alerts Tech Transfer Site Map Last updated: 09172009...

491

Green Purchasing & Green Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

Purchasing & Technology Goals 6 & 7: Green Purchasing & Green Technology Our goal is to purchase and use environmentally sustainable products whenever possible and to implement...

492

Technology Development Loans (Wisconsin)  

Energy.gov (U.S. Department of Energy (DOE))

Technology Development Loans help innovative companies with promising economic futures clear the hurdles associated with bringing new technologies, products, and concepts to market. Loan funds...

493

VEHICLE TECHNOLOGIES PROGRAM - Energy  

75 vehicle technologies program ed wall, program manager ed.wall@ee.doe.gov (202) 586-8055 venture capital technology showcase aug 21 and 22, 2007

494

Technologies | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Technologies Technologies Technologies October 7, 2013 - 10:20am Addthis The Federal Energy Management Program (FEMP) offers information about energy-efficient and renewable energy technologies through the following areas. Energy-Efficient Product Procurement: Find energy-efficient product requirements and technology, purchasing specifications, energy cost savings calculators, model contract language, and resources. Technology Deployment: Look up information about developing, measuring, and implementing new and underutilized technologies for energy management in the Federal Government. Renewable Energy: Read about renewable energy requirements, resources and technologies, project planning, purchasing renewable power, and more. See FEMP's other program areas. Addthis FEMP Home

495

First National Technology Center  

NLE Websites -- All DOE Office Websites (Extended Search)

9 10 First National Technology First National Technology Center Center The Nature of the Grid - Industrial Age Power - Normal Course Voltage Interruptions: 2-3 seconds Lights and...

496

Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices  

Science Conference Proceedings (OSTI)

Reverse-bias stress testing has been applied to a large set of more than 50 AlGaN/GaN high electron mobility transistors, which were fabricated using the same process but with different values of the AlN mole fraction and the AlGaN barrier-layer thickness, as well as different substrates (SiC and sapphire). Two sets of devices having different defect types and densities, related to the different growth conditions and the choice of nucleation layer, were also compared. When subjected to gate drain (or gate-to-drain and source short-circuited) reverse-bias testing, all devices presented the same time-dependent failure mode, consisting of a significant increase in the gate leakage current. This failure mechanism occurred abruptly during step-stress experiments when a certain negative gate voltage, or critical voltage, was exceeded or, during constant voltage tests, at a certain time, defined as time to breakdown. Electroluminescence (EL) microscopy was systematically used to identify localized damaged areas that induced an increase of gate reverse current. This current increase was correlated with the increase of EL intensity, and significant EL emission during tests occurred only when the critical voltage was exceeded. Focused-ion-beam milling produced cross-sectional samples suitable for electron microscopy observation at the sites of failure points previously identified by EL microscopy. In highdefectivity devices, V-defects were identified that were associated with initially high gate leakage current and corresponding to EL spots already present in untreated devices. Conversely, identification of defects induced by reverse-bias testing proved to be extremely difficult, and only nanometer-size cracks or defect chains, extending vertically from the gate edges through the AlGaN/GaN heterojunction, were found. No signs of metal/semiconductor interdiffusion or extended defective areas were visible.

Cullen, David A [ORNL; Smith, David J [Arizona State University; Passaseo, Adriana [Consiglio Nazionale delle Ricerche; Tasco, Vittorianna [Consiglio Nazionale delle Ricerche; Stocco, Antonio [Universita di Padova; Meneghini, Matteo [Universita di Padova; Meneghesso, Gaudenzio [Universita di Padova; Zanoni, Enrico [Universita di Padova

2013-01-01T23:59:59.000Z

497

Technologies - Lawrence Livermore National Laboratory  

home \\ technologies. Technologies: Ready-to-Sign Licenses: Software: Patents: Technologies ... for the Department of Energy's National Nuclear Security Administration

498

06-GA50035b.p65  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WWW.GNEP.ENERGY.GOV WWW.GNEP.ENERGY.GOV United States Department of Energy Continued next page T he Global Nuclear Energy Partnership (GNEP) is a comprehensive strategy to increase U.S. and global energy security, encourage clean development around the world, reduce the risk of nuclear proliferation, and improve the environment. A plentiful, reliable supply of energy is the cornerstone of sustained economic growth and prosperity. Nuclear power is the only proven technology that can provide abundant supplies of base load electricity reliably and without air pollution or emissions of greenhouse gasses. In The Global Nuclear Energy Partnership: Greater Energy Security in a Cleaner, Safer World order to help meet growing demand for energy at home and encourage the growth of prosperity

499

GaSb substrates with extended IR wavelength for advanced space based applications  

SciTech Connect

GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 m. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 m with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

Allen, Lisa P.; Flint, Patrick; Dallas, Gordon; Bakken, Daniel; Blanchat, Kevin; Brown, Gail J.; Vangala, Shivashankar R.; Goodhue, William D.; Krishnaswami, Kannan

2009-05-01T23:59:59.000Z

500

NREL: Geothermal Technologies - Research Staff  

NLE Websites -- All DOE Office Websites (Extended Search)

and Technology Technology Transfer Technology Deployment Energy Systems Integration Geothermal Technologies Search More Search Options Site Map Printable Version Research Staff...