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1

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

2

In: Proceedings of the 1995 International environmental conference; 1995 May 7-10; Atlanta, GA. Atlanta, GA: TAPPI PRESS: 445-448; 1995.  

E-Print Network (OSTI)

. Atlanta, GA: TAPPI PRESS: 445-448; 1995. ENVIRONMENTALLY SOUND ALTERNATIVES FOR UPGRADING MIXED OFFICE

Abubakr, Said

3

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

4

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical  

E-Print Network (OSTI)

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me · New ambition of GamificationU (Top-20 Eng/Tech*) ·

Iosup, Alexandru

5

RECYCLING: SUPPLY, ECONOMICS, ENVIRONMENT, AND TECHNOLOGY  

E-Print Network (OSTI)

Proceedings Technology Park/Atlanta P. O. Box 105113 Atlanta, GA 303+8-5113, USA on recycled paper 416 / TAPPI

Abubakr, Said

6

E-Print Network 3.0 - atlanta ga usa Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Physics and Astronomy, Georgia State University, Atlanta, Georgia... 30303, USA 3 NDP Optronics, Mableton, Georgia 30126, USA *Corresponding author: wzshen... -band imaging device,...

7

Source Apportionment of Daily Fine Particulate Matter at Jefferson Street, Atlanta, GA, during Summer and Winter  

E-Print Network (OSTI)

, especially wood burning, as well as vehicular exhaust, and suggest that secondary aerosol for- mation dominates in summer in Atlanta. TECHNICAL PAPER ISSN 1047-3289 J. Air & Waste Manage. Assoc. 57:228­242 Copyright 2007 Air & Waste Management Association 228 Journal of the Air & Waste Management Association

Zheng, Mei

8

Review of Strategies and Technologies for Demand-Side Management on Isolated Mini-Grids  

E-Print Network (OSTI)

Center for Appropriate Technology. Alice Springs, Australia.Report of Intermediate Technology Consultants to Overseasand Communication Technologies and Development. Atlanta, GA.

Harper, Meg

2014-01-01T23:59:59.000Z

9

Building America Technology Solutions for New and Existing Homes: Ground Source Heat Pump Research, TaC Studios Residence, Atlanta, Georigia (Fact Sheet),  

Energy.gov (U.S. Department of Energy (DOE))

This case study describes the construction of a new test home in Atlanta, GA, that demonstrates current best practices for the mixed-humid climate, including a building envelope featuring advanced air sealing details and low density spray foam insulation, glazing that exceeds ENERGY STAR requirements, and a high performance heating and cooling system.

10

Atlanta Survey  

U.S. Energy Information Administration (EIA) Indexed Site

Profile of Motor-Vehicle Fleets in Atlanta 1994 Profile of Motor-Vehicle Fleets in Atlanta 1994 Assessing the Market for Alternative-Fuel Vehicles 13 Data Tables for Private Fleets There are two types of tables. One type provides counts of the number of fleets that fall into various categories of data. The other provides counts of the number of vehicles by characteristics. Where only fleet data are provided instead of vehicle data, it means that particular questionnaire item was asked at the fleet level only. Vehicle questions were recorded by type of vehicle not by individual vehicle. Table 1. Number of Private Fleets in Atlanta by Fleet Size and Selected Characteristics Fleet Size (number of vehicles) Selected Characteristics Total 6 to 19 20 to 49 50 or More Total Number of Fleets . . . . . . . . . . . . . . . 3,589

11

2009 National Electric Transmission Congestion Study - Atlanta Workshop |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

2009 National Electric Transmission Congestion Study - Atlanta 2009 National Electric Transmission Congestion Study - Atlanta Workshop 2009 National Electric Transmission Congestion Study - Atlanta Workshop On July 29, 2008, DOE hosted a regional pre-study workshop in Atlanta, GA to receive input and suggestions concerning the 2009 National Electric Transmission Congestion Study. The agenda and full transcript are available below. 7-29-08 Congestion Workshop Agenda - Atlanta, GA.pdf Transcript - 2009 National Electric Transmission Congestion Study Atlanta Workshop.pdf More Documents & Publications 2009 National Electric Transmission Congestion Study - San Francisco Workshop 2012 National Electric Transmission Congestion Study - St. Louis Workshop 2009 National Electric Transmission Congestion Study - Las Vegas Workshop

12

Microsoft PowerPoint - 6-03 DOE EM TEM Atlanta AREVA CCIM final 111010.ppt  

NLE Websites -- All DOE Office Websites (Extended Search)

November 17, 2010 November 17, 2010 Next-Generation Induction Melter Technology Development DOE EM Waste Processing Technical Exchange, Nov 16-18, 2010, Atlanta, GA Eric Tchemitcheff, AFS Print Close > DOE EM Waste Processing Technical Exchange - Nov 16-18, 2010 - Atlanta, GA 3 Presentation Outline Introduction CCIM Key Attributes CCIM Target Performance for Hanford WTP Applications EM Tank Waste R&D Plan Initiative 5.2.1  Scope and Objectives - CCIM Project CCIM Project - Proposed HLW Tasks and Milestones CCIM Project - Proposed LAW Tasks and Milestones CCIM Project - Summary FY10 Accomplishments CCIM Project - Anticipated Near-term Outcomes CCIM Project - Summary - Focus Areas Print Close > DOE EM Waste Processing Technical Exchange - Nov 16-18, 2010 - Atlanta, GA 4 DOE EM radwaste vitrification processing challenges are

13

EECBG Success Story: Atlanta Suburb Greases the Path to Savings...  

Energy Savers (EERE)

Atlanta Suburb Greases the Path to Savings with Biodiesel The new energy efficient IT Data Center in Savannah, Georgia. | Courtesy of the City of Savannah, GA. EECBG Success...

14

DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project  

Energy.gov (U.S. Department of Energy (DOE))

2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and Peer Evaluation

15

DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project  

Energy.gov (U.S. Department of Energy (DOE))

2012 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

16

DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project  

Energy.gov (U.S. Department of Energy (DOE))

2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C.

17

Designs on Dignity: Perceptions of Technology Among the Christopher A. Le Dantec W. Keith Edwards  

E-Print Network (OSTI)

Designs on Dignity: Perceptions of Technology Among the Homeless Christopher A. Le Dantec W. Keith of Technology Atlanta, GA, USA {ledantec, keith}@cc.gatech.edu ABSTRACT Technology, it is argued, has

Edwards, Keith

18

Terahertz absorption in AlGaAs films and detection using heterojunctions  

E-Print Network (OSTI)

a Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA b NDP Optronics, LLC-mail address: uperera@gsu.edu (A.G.U. Perera). 1 Also at NDP Optronics LLC. Infrared Physics & Technology 47

Perera, A. G. Unil

19

Atlanta, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Atlanta, Georgia: Energy Resources Atlanta, Georgia: Energy Resources (Redirected from Atlanta, GA) Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.7489954°, -84.3879824° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.7489954,"lon":-84.3879824,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

20

The View From the Trenches: Organization, Power, and Technology at Two Nonprofit Homeless Outreach Centers  

E-Print Network (OSTI)

Centers Christopher A. Le Dantec W. Keith Edwards GVU Center and School of Interactive Computing College of Computing Georgia Institute of Technology Atlanta, GA, USA {ledantec, keith}@cc.gatech.edu ABSTRACT

Edwards, Keith

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

TEC Rail TG Summary_Atlanta  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

March 5-6, 2007 Atlanta, GA March 5-6, 2007 Atlanta, GA Rail Topic Group Alex Thrower began the meeting and welcomed all topic group participants and support contractor staff. Mr. Thrower established that the following issues and sub-topic group matters required further consideration and in some cases next steps needed to be planned. These include: Inspections Checklist Mr. Thrower requested that members submit their feedback on the items inspected during point of origin and en route inspections in the form of a short listing. Next steps involve: * Presenting the checklist to Federal Railroad Administration (FRA) state managers in a preliminary format; * Discussions with DOT in regard to formatting the checklist; and * Development of a complete reference list to be placed onto blue cards to be used

22

Building America Technology Solutions for New and Existing Homes...  

Energy Savers (EERE)

Atlanta, Georigia (Fact Sheet), This case study describes the construction of a new test home in Atlanta, GA, that demonstrates current best practices for the mixed-humid...

23

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

24

Atlanta- Sustainable Development Design Standards  

Energy.gov (U.S. Department of Energy (DOE))

In December 2003, the City of Atlanta passed a green building [http://www.atlantaga.gov/modules/showdocument.aspx?documentid=547 ordinance] that applies to city-owned facilities and city-funded...

25

Synthesis and properties of green phosphor SrGa2S4:Eu2 emission displays by an environmentally clean technique  

E-Print Network (OSTI)

by an environmentally clean technique Y.D. Jianga , G. Villalobosa , J.C. Souriaua , H. Parisa , C.J. Summersa , Z.L. Wangb,* a Phosphor Technology Center of Excellence, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA b School of Materials Science and Engineering, Georgia

Wang, Zhong L.

26

Atlanta TEC Meeting -- Tribal Group Summary 3-6-07  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA - January 31, 2007 Atlanta, GA - January 31, 2007 Session Chaired by: Jay Jones (DOE, Office of Civilian Radioactive Waste Management, OCRWM) Regular Members in Attendance: Kenny Anderson (Las Vegas Paiute Tribe), Richard Arnold (Las Vegas Indian Center/Pahrump Paiute Tribe), Tony Boyd (Pueblo of Acoma), Rob Burnside (Confederated Tribes of the Umatilla Indian Reservation, CTUIR), Floyd Chaney (Mohegan Tribe), Sandra Covi (Union Pacific Railroad), Martha Crosland (DOE/Office of General Counsel, GC), Kristen Ellis (DOE/Intergovernmental and External Affairs, CI), Frank Gavigan (Mohegan Tribe), Ed Gonzales (ELG Engineering/Pueblo de San Ildefonso), Robert Gruenig (National Tribal Environmental Council, NTEC), Paloma Hill (OCRWM Intern), Judith Holm (OCRWM), Gayl Honanie (Hopi Tribe), Lisa Janairo

27

City of Atlanta Video (Text Version)  

Energy.gov (U.S. Department of Energy (DOE))

Aaron Bastian: According to the U.S. EPA, Atlanta is one of the top ten cities in the country for green buildings. It is a city that is walk and bike friendly, and now Atlanta is second in the...

28

Atlanta Chemical Engineering LLC | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit with form History Facebook icon Twitter icon » Atlanta Chemical Engineering LLC Jump to: navigation, search Logo: Atlanta Chemical Engineering LLC Name Atlanta Chemical Engineering LLC Place Marietta, Georgia Zip 30064 Country United States Sector Biomass Year founded 2008 Company Type For Profit Company Ownership Private Small Business Yes References Atlanta Chemical Engineering LLC[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Atlanta Chemical Engineering LLC is a company based in Marietta, Georgia. References ↑ "Atlanta Chemical Engineering LLC" Retrieved from "http://en.openei.org/w/index.php?title=Atlanta_Chemical_Engineering_LLC&oldid=699086"

29

Better Buildings Challenge, Atlanta Nears Halfway Mark in Meeting...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Challenge Breakout Session Panel with representatives from the City of Atlanta Office of Sustainability, Southface, the U.S. General Services Administration, and two Atlanta BBC...

30

Federal Utility Partnership Working Group: Atlanta Gas Light...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Group: Atlanta Gas Light Resources Federal Utility Partnership Working Group: Atlanta Gas Light Resources Presentation-given at the April 2012 Federal Utility Partnership Working...

31

Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Atlanta Airport Atlanta Airport Converts Shuttles to CNG to someone by E-mail Share Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Facebook Tweet about Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Twitter Bookmark Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Google Bookmark Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Delicious Rank Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Digg Find More places to share Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on AddThis.com... Sept. 9, 2012 Atlanta Airport Converts Shuttles to CNG L earn how an Atlanta company saves money and conserves fuel with compressed natural gas airport shuttles.

32

Fabrication of ?-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology  

Science Journals Connector (OSTI)

Laser molecular beam epitaxy technology has been employed to deposit ?-gallium oxide (?-Ga2O3) on (0001) sapphire substrates. After optimizing the...

Guo, Daoyou; Wu, Zhenping; Li, Peigang; An, Yuehua; Liu, Han; Guo, Xuncai; Yan, Hui; Wang, Guofeng; Sun, Changlong; Li, Linghong; Tang, Weihua

2014-01-01T23:59:59.000Z

33

IEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array  

E-Print Network (OSTI)

2.3-m laser. Al Ga As Sb cladding layers. Details of the lasers' heterostructure design can be foundIEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array L. Shterengas, G--High-power 2.3- m In(Al)GaAsSb­GaSb type-I double quantum-well diode laser arrays were fabricated

34

Toughening and asymmetry in peeling of heterogeneous adhesives Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0405, USA  

E-Print Network (OSTI)

at the macroscale. Our study reveals three elementary mechanisms in heterogeneous systems involving front force resulting in dramatically en- hanced resistance to peeling; (ii) optimized arrangements of pinning sites with large adhesion energy are shown to control the effective system resistance, allowing

35

Microsoft Word - Transcript_Pre-2009 Congestion Study_Atlanta.doc  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7/29/2008 7/29/2008 Atlanta, GA Page 1 U.S. Department of Energy Pre-Congestion Study Regional Workshops for the 2009 National Electric Congestion Study Atlanta, GA July 29, 2008 9:00 a.m.-12:30 p.m. Transcript David Meyer: Ladies and gentlemen, I'm David Meyer from the Department of Energy. I want to welcome you to our workshop for upcoming 2009 congestion studies. I'm going to make a short presentation here scoping out what we have in mind and what our purposes are in holding this workshop. But, before I do that, I want to introduce some of my colleagues here, particularly Lot Cooke who is from our General Counsel's office. Several other people from my office at the Department of Energy: Mark Whitenton and Elliott Nethercutt; and Elizabeth

36

Workplace Charging Challenge Partner: City of Atlanta | Department...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Partner City of Atlanta. View more videos on the Alternative Fuels and Advanced Vehicles Data Center. Skyline view of the City of Atlanta at sunset. Text version Meet Challenge...

37

E-Print Network 3.0 - atlanta georgia metropolitan Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

Summary: University; Atlanta, Georgia September 1996 - Assistant Professor of Political Science Emory University... ; Atlanta, Georgia September 1993 - August 1996 On...

38

Atlanta Community Leaders' Institute Conference | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta Community Leaders' Institute Conference Atlanta Community Leaders' Institute Conference Atlanta Community Leaders' Institute Conference April 15, 2013 - 1:31pm Addthis Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. What does this project do? Goal 1. Protect human health and the environment The Atlanta Community Leaders Institute (CLI) held a conference on February 8 and 9 at Morehouse School of Medicine, in Atlanta, Georgia. The conference was sponsored by the Medical University of South Carolina, U.S. Department of Energy, Southeastern Virtual Institute for Health and Wellness, U.S. Department of Defense, DeKalb County, Morehouse School of

39

Atlanta Community Leaders' Institute Conference | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta Community Leaders' Institute Conference Atlanta Community Leaders' Institute Conference Atlanta Community Leaders' Institute Conference April 15, 2013 - 1:31pm Addthis Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. Dr. David Satcher speaks at the Community Leaders' Institute at Morehouse School of Medicine in Atlanta, Georgia. What does this project do? Goal 1. Protect human health and the environment The Atlanta Community Leaders Institute (CLI) held a conference on February 8 and 9 at Morehouse School of Medicine, in Atlanta, Georgia. The conference was sponsored by the Medical University of South Carolina, U.S. Department of Energy, Southeastern Virtual Institute for Health and Wellness, U.S. Department of Defense, DeKalb County, Morehouse School of

40

Making Connections for Atlanta Students | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Making Connections for Atlanta Students Making Connections for Atlanta Students Making Connections for Atlanta Students June 4, 2013 - 4:29pm Addthis Mary Shoemaker A rising senior at Georgia Tech Editor's note: In the last week in April, Director Dot Harris of the U.S. Department of Energy's Office of Economic Impact and Diversity gathered alongside local energy leaders at Clark Atlanta University for the Atlanta Students in Energy and Climate Forum. Mary Shoemaker, a rising senior at Georgia Tech, was one of the student speakers at the event. The following is her perspective of the event. On a beautiful afternoon in April, I found myself surrounded by like-minded individuals: students, entrepreneurs, and professors gathered to share experiences and motivations in their pursuit of environmental stewardship.

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

E-Print Network 3.0 - atlanta urban rain Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

(2008). Shem and Shepherd (2009) noted that Atlanta creates enhanced convergence at the rural-urban... delineation of urban convection for Atlanta, Georgia. Int. J. Climatol., 30,...

42

Microsoft Word - Atlanta Agenda FINAL _2_.doc  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Westin Peachtree Plaza Hotel Westin Peachtree Plaza Hotel Atlanta, Georgia July 29, 2008 AGENDA 8:00 - 9:00 am Registration 9:00 - 9:15 am DOE Presentation Plans for the 2009 Congestion Study and Objectives of Workshop 9:15 - 10:30 am Panel I Panelists: Cindy Miller, Senior Attorney, Office of General Counsel, Florida Public Service Commission The Honorable Jim Sullivan, President, Alabama Public Service Commission Charles Terreni, Executive Director, South Carolina Public Service Commission Burl D. Till, III, Manager, Transmission Planning Department, Tennessee Valley Authority The Honorable Stan Wise, Commissioner, Georgia Public Service Commission 10:30 -10:45 am Break 10:45 - 12:00 pm Panel II Panelists: George Bartlett, Director, Transmission Planning and Operations, Entergy Services

43

Atlanta NAVIGATOR case study. Final report, May 1996--Jun 1997  

SciTech Connect

The Atlanta metropolitan region was the location of one of the most ambitious Intelligent Transportation Systems (ITS) deployments in the United States. This deployment included several individual projects--a Central Transportation Management Center (TMC), six Traffic Control Centers (TCC), one Transit Information Center (TIC), the Travel Information Showcase (TIS), and the extension of the Metropolitan Atlanta Rapid Transit Authority (MARTA) rail network and the new high-occupancy vehicle (HOV) lanes on I-85 and I-75. The Atlanta Centennial Olympic Games and Paralympic Games created a focus for these projects. All of these systems were to be brought on line in time for the Olympic Games. This report presents the findings of the NAVIGATOR Case Study and documents the lessons learned from the Atlanta ITS deployment experience in order to improve other ITS deployments in the future. The Case Study focuses on the institutional, programmatic, and technical issues and opportunities from planning and implementing the ITS deployment in Atlanta. The Case Study collected data and information from interviews, observations, focus groups, and documentation reviews. It presents a series of lessons learned and recommendations for enabling successful ITS deployments nationwide.

Amodei, R.; Bard, E.; Brong, B.; Cahoon, F.; Jasper, K.

1998-11-01T23:59:59.000Z

44

Bottom-up Representation of Industrial Energy Efficiency Technologies in Integrated Assessment Models for the U.S. Pulp and Paper Sector  

E-Print Network (OSTI)

2001. The Energy Technology Systems Analysis Programme (and Institute of Paper Science and Technology (IPST) atGeorgia Institute of Technology, Atlanta. Kramer, K. J. ,

Xu, Tengfang

2014-01-01T23:59:59.000Z

45

Microsoft Word - Final TEC Notes Atlanta 07.doc  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

TRANSPORTATION EXTERNAL COORDINATION WORKING GROUP MEETING January 31-February 1, 2007 Atlanta, Georgia Welcome and Meeting Overview The U.S. Department of Energy (DOE), Transportation External Coordination Working Group (TEC) held its 27th meeting on January 31-February 1, 2007, in Atlanta, Georgia. One hundred thirteen participants, representing national, State, Tribal, and local government; industry; professional organizations; and other interested parties, met to address a variety of issues related to DOE's radioactive materials transportation activities. The TEC process includes the involvement of these key stakeholders in developing solutions to DOE transportation issues through their actual participation in the work product. These members

46

UNITED STATES ENVIRONMENTAL PROTECTION AGENCY ATLANTA FEDERAL CENTER  

E-Print Network (OSTI)

Number 2001-10096 Subject: COE Regulatory Final Environmental Impact Statement (FEIS) for "PCS Phosphate) regulatory Final Environmental Impact Statement (FEIS). This FEIS evaluates the environmental consequencesUNITED STATES ENVIRONMENTAL PROTECTION AGENCY REGION 4 ATLANTA FEDERAL CENTER 61 FORSYTH STREET

Demers, Nora Egan

47

0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology  

SciTech Connect

Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and {approx}0.85 W/cm{sup 2} could be attained under the above operating temperatures.

MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

2004-06-09T23:59:59.000Z

48

North Atlanta, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

North Atlanta, Georgia: Energy Resources North Atlanta, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.8651033°, -84.3365917° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.8651033,"lon":-84.3365917,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

49

Underground Storage Technology Consortium  

NLE Websites -- All DOE Office Websites (Extended Search)

U U U N N D D E E R R G G R R O O U U N N D D G G A A S S S S T T O O R R A A G G E E T T E E C C H H N N O O L L O O G G Y Y C C O O N N S S O O R R T T I I U U M M R R & & D D P P R R I I O O R R I I T T Y Y R R E E S S E E A A R R C C H H N N E E E E D D S S WORKSHOP PROCEEDINGS February 3, 2004 Atlanta, Georgia U U n n d d e e r r g g r r o o u u n n d d G G a a s s S S t t o o r r a a g g e e T T e e c c h h n n o o l l o o g g y y C C o o n n s s o o r r t t i i u u m m R R & & D D P P r r i i o o r r i i t t y y R R e e s s e e a a r r c c h h N N e e e e d d s s OVERVIEW As a follow up to the development of the new U.S. Department of Energy-sponsored Underground Gas Storage Technology Consortium through Penn State University (PSU), DOE's National Energy Technology Center (NETL) and PSU held a workshop on February 3, 2004 in Atlanta, GA to identify priority research needs to assist the consortium in developing Requests for Proposal (RFPs). Thirty-seven

50

Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output  

SciTech Connect

Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products.

Dinetta, L.C.; Hannon, M.H.

1995-10-01T23:59:59.000Z

51

Accepted with minor revisions by TNNLS Special Issue on Learning in Nonstationary and Evolving Environments  

E-Print Network (OSTI)

of Technology, Atlanta, GA 30332­0250 2Entergy Services, Inc., New Orleans, LA 70053 3Howard University, NW

Ji, Chuanyi

52

Choice Based Revenue Management for Parallel Flights  

E-Print Network (OSTI)

Mar 6, 2014 ... We formulate corresponding deterministic (fluid) optimization ... and Systems Engineering, Georgia Institute of Technology, Atlanta, GA...

Jim Dai

2014-03-06T23:59:59.000Z

53

Better Buildings Challenge, Atlanta Nears Halfway Mark in Meeting Citywide Goal of 20% Energy Savings  

Energy.gov (U.S. Department of Energy (DOE))

The Energy Department yesterday recognized Atlanta for its progress and leadership in meeting a citywide goal to improve the energy performance of its buildings by 20% by 2020.

54

Statement by Energy Secretary Steven Chu on Opening of Atlanta Job Training  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Opening of Atlanta Job Opening of Atlanta Job Training Center Statement by Energy Secretary Steven Chu on Opening of Atlanta Job Training Center October 26, 2010 - 12:00am Addthis WASHINGTON, D.C. - U.S. Energy Secretary Steven Chu issued the following statement on today's grand opening of the Southeast Weatherization & Energy Efficiency Training (SWEET) Center in Atlanta, Georgia. "The SWEET Center in Atlanta will play a critical role in training thousands of workers for new jobs, laying the foundation for continued growth in this developing industry. With help from the Recovery Act, this program will provide workers with the skills they need to offer local homeowners quality energy efficiency upgrades that will save them money by saving energy." BACKGROUND INFORMATION ON TODAY'S ANNOUNCEMENT

55

Quantification of the Heterogeneity in Breast Cancer Cell Lines Using Whole-Cell Impedance Spectroscopy  

Science Journals Connector (OSTI)

...School of Electrical and Computer Engineering, Georgia...Department of Electrical and Computer Engineering, Texas...Atlanta, GA; and 3 School of Electrical and Computer Engineering, Georgia...Technology, Atlanta, GA Grant support: NIH/National...

Arum Han; Lily Yang; and A. Bruno Frazier

2007-01-01T23:59:59.000Z

56

Navy Technology Validation (Techval) Monitoring Results  

Energy.gov (U.S. Department of Energy (DOE))

Presentation covers the Navy Technology Validation (Techval) Monitoring Results and is given at the Federal Utility Partnership Working Group (FUPWG) 2006 Spring meeting, held on May 3-4, 2006 in Atlanta, Georgia.

57

Building America Case Study: Ground Source Heat Pump Research, TaC Studios Residence, Atlanta, Georigia (Fact Sheet)  

SciTech Connect

As part of the NAHB Research Center Industry Partnership, Southface partnered with TaC Studios, an Atlanta based architecture firm specializing in residential and light commercial design, on the construction of a new test home in Atlanta, GA in the mixed-humid climate. This home serves as a residence and home office for the firm's owners, as well as a demonstration of their design approach to potential and current clients. Southface believes the home demonstrates current best practices for the mixed-humid climate, including a building envelope featuring advanced air sealing details and low density spray foam insulation, glazing that exceeds ENERGY STAR requirements, and a high performance heating and cooling system. Construction quality and execution was a high priority for TaC Studios and was ensured by a third party review process. Post construction testing showed that the project met stated goals for envelope performance, an air infiltration rate of 2.15 ACH50. The homeowner's wished to further validate whole house energy savings through the project's involvement with Building America and this long-term monitoring effort. As a Building America test home, this home was evaluated to detail whole house energy use, end use loads, and the efficiency and operation of the ground source heat pump and associated systems. Given that the home includes many non-typical end use loads including a home office, pool, landscape water feature, and other luxury features not accounted for in Building America modeling tools, these end uses were separately monitored to determine their impact on overall energy consumption.

Not Available

2014-09-01T23:59:59.000Z

58

Community transportation : alternative transportation provision in a low-income neighborhoods in southeast Atlanta  

E-Print Network (OSTI)

Regional transit agencies are ineffective at meeting many of the basic transportation needs of a clustered "Study Area" of low-income Atlanta neighborhoods. For transit dependant residents in the Study Area, getting to the ...

Alexander, James W., 1977-

2004-01-01T23:59:59.000Z

59

E-Print Network 3.0 - atlanta georgia usa Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

georgia usa Search Powered by Explorit Topic List Advanced Search Sample search results for: atlanta georgia usa Page: << < 1 2 3 4 5 > >> 1 (virulence) CAI-1 System Summary: OF...

60

An Update of the U.S. Clean Coal Technology Demonstration Program  

NLE Websites -- All DOE Office Websites (Extended Search)

Ofiice of Fossil Energy, U.S. Department of Energy Ofiice of Fossil Energy, U.S. Department of Energy Clean Coal Briefs Progress continued in the program this quarteras Southern Company Servic- es' SCR test project became the 23rd government/industry cooperative ven- ture to move into operations (see story p, 7). Look for results and other data in future issues of Clean Coul Today. Tthe Second Annual Clean Coal Technology Conference was held in Atlanta,GA,fromSeptember7-9,1993. This year's conference attracted a large number of overseas visitors who are interested in learning more about the clean coal technologies being demon- strated in the United States. Special thanks to the Southern States Energy Board for its help and hospitality this year, and to Georgia Power Company for its kind hospitality during the tour of

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network (OSTI)

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

62

No evidence for acid-catalyzed secondary organic aerosol formation in power plant plumes over metropolitan Atlanta, Georgia - article no. L06801  

SciTech Connect

Aircraft-based measurements of the water-soluble fraction of fine PM organic carbon (WSOC) and inorganic salt composition in the Atlanta, GA region were conducted in the summer of 2004. Five notable plumes of SO{sub 2}, apparently from coal-fired power plants, were intercepted, and had NH{sub 4}{sup +}/SO4{sup 2-} molar ratios ranging from approximately 0.8 to 1.4 compared to molar ratios near 2 outside of the plumes. Sulfate aerosol concentrations increased from a regional background of 5 - 8 {mu} g m{sup -3} to as high as 19.5 {mu} g m{sup -3} within these plumes. No increase in WSOC concentrations was observed in plumes compared to out-of-plumes within a WSOC measurement uncertainty of 8%. These measurements suggest that secondary organic aerosol formation via heterogeneous acid-catalyzed reactions within power plant plumes are not likely a significant contributor to the ambient aerosol mass loading in Atlanta and the surrounding region. Because this region is rich in both biogenic and anthropogenic volatile organic carbon (VOC), the results may be widely applicable.

Peltier, R.E.; Sullivan, A.P.; Weber, R.J.; Wollny, A.G.; Holloway, J.S.; Brock, C.A.; de Gouw, J.A.; Atlas, E.L. [Georgia Institute for Technology, Atlanta, GA (United States). School for Earth and Atmospheric Science

2007-03-15T23:59:59.000Z

63

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response  

E-Print Network (OSTI)

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 Received 27 infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

Jalali. Bahram

64

EcoCAR Challenge Georgia Institute of Technology  

E-Print Network (OSTI)

EcoCAR Challenge Georgia Institute of Technology Outreach Report Date: 11/09/2010 #12;11/9/2010 2 plan on leveraging our media contacts, GM sponsors, and Atlanta Clean Cities sponsors to potentially

Houston, Paul L.

65

Atlanta Suburb Greases the Path to Savings with Biodiesel | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta Suburb Greases the Path to Savings with Biodiesel Atlanta Suburb Greases the Path to Savings with Biodiesel Atlanta Suburb Greases the Path to Savings with Biodiesel December 7, 2011 - 3:33pm Addthis Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Chris Galm Marketing & Communications Specialist, Office of Energy Efficiency & Renewable Energy What does this project do? Reduces fuel consumption Saves the city money Extends the lifespan of city owned service vehicles "We sat down and actually met with several people out of the biodiesel industry and found out how amazingly simple it was for us to do this. To

66

Atlanta Suburb Greases the Path to Savings with Biodiesel | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta Suburb Greases the Path to Savings with Biodiesel Atlanta Suburb Greases the Path to Savings with Biodiesel Atlanta Suburb Greases the Path to Savings with Biodiesel December 7, 2011 - 3:33pm Addthis Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Downtown Smyrna, Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook Chris Galm Marketing & Communications Specialist, Office of Energy Efficiency & Renewable Energy What does this project do? Reduces fuel consumption Saves the city money Extends the lifespan of city owned service vehicles "We sat down and actually met with several people out of the biodiesel industry and found out how amazingly simple it was for us to do this. To

67

Microsoft PowerPoint - Clark Atlanta DOE MEI Small Business presentation August 2009 for pdf.ppt [Compatibility Mode]  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

CLARK ATLANTA UNIVERSITY CLARK ATLANTA UNIVERSITY CLARK ATLANTA UNIVERSITY Presentation at the Presentation at the CLARK ATLANTA UNIVERSITY CLARK ATLANTA UNIVERSITY Presentation at the Presentation at the 10 10 th th Annual DOE MEI Small Business Conference Annual DOE MEI Small Business Conference CAU's Energy Related Research Capabilities CAU's Energy Related Research Capabilities 10 10 th th Annual DOE MEI Small Business Conference Annual DOE MEI Small Business Conference CAU's Energy Related Research Capabilities CAU's Energy Related Research Capabilities Ishrat M Khan Ph.D. Ishrat M Khan Ph.D. Ishrat M Khan Ph.D. Ishrat M Khan Ph.D. Director, Center for Functional Director, Center for Functional Nanoscale Nanoscale Materials Materials ikhan@cau.edu ikhan@cau.edu www cau edu/research www

68

Auditory Menus Are Not Just Spoken Visual Menus: A Case Study of  

E-Print Network (OSTI)

Interface Copyright is held by the author/owner(s). CHI 2010, April 10­15, 2010, Atlanta, Georgia, USA. ACM Institute of Technology 654 Cherry Street, Atlanta, GA, 30332 USA davison@gatech.edu Bruce N. Walker Street, Atlanta, GA, 30332 USA bruce.walker@psych.gatech.edu CHI 2010: Work-in-Progress (Spotlight

69

Black and White Commuting Behavior in a Large Southern City: Evidence from Atlanta  

E-Print Network (OSTI)

Black and White Commuting Behavior in a Large Southern City: Evidence from Atlanta Clark, W. A. VV430X. William A. V. Clark Youqin Huang Black and White Commuting Behavior in a Large Southern City and white households are consistent with the overall hypothesis that households min- imize their commuting

Huang, Youqin

70

Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia-- March 16-18, 2011  

Energy.gov (U.S. Department of Energy (DOE))

This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

71

A Dynamic GISMulticriteria Technique for Siting the NASAClark Atlanta Urban Rain Gauge Network  

Science Journals Connector (OSTI)

Because Atlanta, Georgia, is a model of rapid transition from forest/agriculture land use to urbanization, NASA and other agencies have initiated programs to identify and understand how urban heat islands (UHIs) impact the environment in terms of ...

J. Marshall Shepherd; Olayiwola O. Taylor; Carlos Garza

2004-09-01T23:59:59.000Z

72

STATEMENT OF CONSIDERATIONS REQUEST BY ATLANTA GAS LIGHT AND ADSORBENT RESEARCH  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

AUub. -5'94(THU) 14:09 DO PLD-CHICAGO TEL:1 70 252 2779 P, 004 AUub. -5'94(THU) 14:09 DO PLD-CHICAGO TEL:1 70 252 2779 P, 004 STATEMENT OF CONSIDERATIONS REQUEST BY ATLANTA GAS LIGHT AND ADSORBENT RESEARCH GROUP (AGLARG) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER SUBCONTRACT NO. 466590 AT BROOKHAVEN NATIONAL LABORATORY; W(A) -9421, CH-0839 The Atlanta Gac Light and Adsorbent Rcscarch Group (AGLARG), a large business coneortium, hao petitioned for an advance waiver of patent rights under its Subcontract No. 466590 from Brookhaven National Laboratory, operated by Associated Univeraitico, Inc. under DOE Contract No. DE-AC02-76CH00016. The purpooc of this subcontract includes the design, fabrication, testing and demonstration of a fuel storage and fuel delivery system for at least two natural gas powered engines in light duty vehicles

73

SR0006  

NLE Websites -- All DOE Office Websites (Extended Search)

and technology are on display at the Department of Energy Environmental Management Science Program (EMSP) National Workshop in Atlanta, GA on April 25-27 at the Westin...

74

NETL F 451.1/1-1, Categorical Exclusion Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Alternative Fuel and Advanced Technology Vehicle Project Install compressed natural gas fueling station at 4420 Buford Hwy. Atlanta, GA. Steven Richardson Digitally signed by...

75

Atlanta Centennial Olympic Games and Paralympic Games event study, 1996. Final report, July 1996--August 1996  

SciTech Connect

The Atlanta metropolitan region was the location of one of the most ambitious Intelligent Transportation Systems (ITS) deployments in the United States. This deployment included several individual projects--a Central Transportation Management Center (TMC), six Traffic Control Centers (TCCs), one Transit Information Center (TIC), The Travel Information Showcase (TIS), and the extension of the Metropolitan Atlanta Rapid Transit Authority (MARTA) Rail network and the new high-occupancy vehicle (HOV) lanes on I-85 and I-75. The 1996 Atlanta Centennial Olympic Games and Paralympic Games created a focus for these projects. All of these systems were to be brought on-line in time for the Olympic Games. This report presents the findings of the 1996 Olympic and Paralympic Games Events Study--a compilation of findings of system performance, the benefits realized, and the lessons learned during their operations over the event period. The study assessed the performance of the various Travel Demand Management (TDM) plans employed for Olympic Games traffic management.

Amodei, R.; Bard, E.; Brong, B.; Cahoon, F.; Jasper, K.

1998-11-01T23:59:59.000Z

76

Capacitance hysteresis in GaN/AlGaN heterostructures L. E. Byrum,1  

E-Print Network (OSTI)

Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA 2 NDP Optronics

Matsik, Steven G.

77

GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges  

E-Print Network (OSTI)

, Georgia State University, Atlanta, Georgia 30303 S. G. Matsik NDP Optronics LLC, Mableton, Georgia 30126 A

Perera, A. G. Unil

78

LOW VOLTAGE ANALOG CIRCUITS USING STANDARD CMOS TECHNOLOGY  

E-Print Network (OSTI)

LOW VOLTAGE ANALOG CIRCUITS USING STANDARD CMOS TECHNOLOGY Phillip E. Allen, Benjamin J. Blalock, and Gabriel A. Rincon School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta supply voltages in CMOS integrated circuits. As the channel lengths of CMOS technology decrease

Rincon-Mora, Gabriel A.

79

1718 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 7, JULY 2004 Solar-Blind AlGaN-Based p-i-n Photodiodes With  

E-Print Network (OSTI)

-i-n Photodiodes With Low Dark Current and High Detectivity N. Biyikli, I. Kimukin, O. Aytur, and E. Ozbay Abstract--We report solar-blind Al Ga1 N-based heterojunc- tion p-i-n photodiodes with low dark current and high. Index Terms--AlGaN, dark current, detectivity, heterostruc- ture, high-performance, p-i-n photodiode

Aytür, Orhan

80

Presented at the ASHRAE Winter Meeting, Atlanta, GA, February 1721, 1996, and to be published in the Proceedings  

E-Print Network (OSTI)

, and to be published in the Proceedings A Comparison Between Calculated and Measured SHGC for Complex Fenestration Calculated and Measured SHGC for Complex Fenestration Systems J. H. Klems, J. L. Warner, and G. O. Kelley;A Comparison Between Calculated and Measured SHGC for Complex Fenestration Systems J. H. Klems, J. L

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Thermal comfort in naturally-ventilated and air-conditioned classrooms in the tropics.  

E-Print Network (OSTI)

in kindergartens. IAQ '91 Healthy Buildings, Atlanta, GA,kindergartens. in IAQ '91 Healthy Buildings. 1991. Atlanta,in kindergartens. IAQ '91 Healthy Buildings, Atlanta, GA,

Kwok, Alison G

1997-01-01T23:59:59.000Z

82

COOPERATIVE AND NON-COOPERATIVE DECISION BEHAVIORS IN RESPONSE TO THE INSPECTION AND MAINTENANCE PROGRAM IN THE ATLANTA  

E-Print Network (OSTI)

COOPERATIVE AND NON-COOPERATIVE DECISION BEHAVIORS IN RESPONSE TO THE INSPECTION AND MAINTENANCE BEHAVIORS IN RESPONSE TO THE INSPECTION AND MAINTENANCE PROGRAM IN THE ATLANTA AIRSHED, 1997-2001 Bryan G not have been able to cover the immense research landscape that is presented in this dissertation. Bryan

Vermont, University of

83

Elsevier, Journal of Transport Geography, volume 24, 2012 Atlanta: A Mega Logistics Center in the Piedmont Atlantic Megaregion (PAM)  

E-Print Network (OSTI)

1 Elsevier, Journal of Transport Geography, volume 24, 2012 Atlanta: A Mega Logistics Center.ross@coa.gatech.edu Abstract This paper looks at spatial patterns of freight and logistics activities and the planning and policy issues associated with them. Two important characteristics of the geography of the logistics

Paris-Sud XI, Université de

84

Microsoft PowerPoint - 9-05 Lutze LUTZE - Atlanta Nov 2010.ppt  

NLE Websites -- All DOE Office Websites (Extended Search)

DuraLith Geopolymer Low DuraLith Geopolymer Low Temperature Waste Forms Werner Lutze, Weiliang Gong, and Ian L. Pegg Vitreous State Laboratory The Catholic University of America Washington, DC EM Waste Processing Technical Exchange Atlanta , , Nov. 16 - 18, 2010 Print Close 2 DuraLith Geopolymer Low Temperature Waste Forms A Geopolymer is .... .... an inorganic solid formed by poly-condensation: NaOH n{-O-Si-OH + HO-Al-O-}  {-O-Si-O-Al-O-} n + nH 2 O General formula: (Na,K) n [(SiO 2 ) z -AlO 2 ] n ·wH 2 O 'w' << 1 1≤ z ≤ 3 Print Close 3 DuraLith Geopolymer Low Temperature Waste Forms Geopolymers ....  ... can be made at room temperature from any reactive aluminosilicate with alkali hydroxide or alkali polysilicates  ... contain very little water after complete hardening  ... are resistant to acids

85

Technology in Spiritual Formation: An Exploratory Study of Computer Mediated Religious Communications  

E-Print Network (OSTI)

Technology in Spiritual Formation: An Exploratory Study of Computer Mediated Religious of Technology 85 Fifth Street NW Atlanta Georgia 30308 {spwyche, gillian, beki}@cc.gatech.edu *Georgia Gwinnett report findings from a study of American Christian ministers' uses of technologies in religious practices

Hayes, Gillian R.

86

Technolog  

NLE Websites -- All DOE Office Websites (Extended Search)

Research in Research in Science and Technolog y Sandia pushes frontiers of knowledge to meet the nation's needs, today and tomorrow Sandia National Laboratories' fundamental science and technology research leads to greater understanding of how and why things work and is intrinsic to technological advances. Basic research that challenges scientific assumptions enables the nation to push scientific boundaries. Innovations and breakthroughs produced at Sandia allow it to tackle critical issues, from maintaining the safety, security and effectiveness of the nation's nuclear weapons and preventing domestic and interna- tional terrorism to finding innovative clean energy solutions, develop- ing cutting-edge nanotechnology and moving the latest advances to the marketplace. Sandia's expertise includes:

87

Characterization of heavy masses of two-dimensional conduction subband in InGaAs/InAlAs MQW structures by pulsed cyclotron resonance technology  

SciTech Connect

Conduction-band effective masses in a direction parallel to the quantum well plane were investigated in n-type-modulation-doped InGaAs/InAlAs multiquantum well system. Thicknesses of well and barrier were 5 and 10 nm. Three highly-doped specimens having about 1 {times} 10{sup 12} cm{sup {minus}2} per one quantum well were prepared by MBE. Double-crystal X-ray diffraction was used to check the crystal quality. Heavy electron effective masses, almost 50% bigger than the band edge mass of 0.041m{sub 0}, were measured by far-infrared and infrared cyclotron resonances under pulse high magnetic fields up to 100 T. Nonparabolicity of this subband was less than 12% by comparing the two cyclotron resonances. Observed two-dimensional subband structure was quite different from conduction-band effective mass in a direction perpendicular to the same quantum well and from GaAs/GaAlAs quantum well system.

Kotera, N.; Tanaka, K. [Kyushu Inst. of Technology, Iizuka, Fukuoka (Japan); Arimoto, H.; Miura, N. [Univ. of Tokyo, Roppongi, Tokyo (Japan). Inst. of Solid State Physics; Jones, E.D. [Sandia National Labs., Albuquerque, NM (United States); Mishima, T. [Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.; Washima, M. [Hitachi Cable, Ltd., Tsukuba, Ibaraki (Japan). Advanced Research Center

1998-05-01T23:59:59.000Z

88

Liquid Crystalline Polymer (LCP) Based Lumped-Element Bandpass Filters for Multiple WirelessApplications'  

E-Print Network (OSTI)

, Inc., Atlanta, GA 30332, USA Abstract - This paper presents for the first time the design* *Schoolof Electrical Engineering, Georga Institute of Technology,Atlanta, GA 30332,USA **JacketMicro Devices the sides used as inpdoutput terminals thus minimizing radiation losses and EM1 interference, 2) using

Swaminathan, Madhavan

89

Device-level thermal analysis of GaN-based electronics  

E-Print Network (OSTI)

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

90

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density  

E-Print Network (OSTI)

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

Chen, Zhi

91

Performance improvements of ultraviolet/infrared dual-band detectors A.G.U. Perera a,*, G. Ariyawansa a  

E-Print Network (OSTI)

University, Atlanta, GA 30303, United States b NDP Optronics, Mableton, GA 30126, United States c School

Dietz, Nikolaus

92

Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Needs and Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting Atlanta, Georgia - March 16-18, 2011 May 2011 ii NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or

93

Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors  

E-Print Network (OSTI)

, Georgia State University, Atlanta, Georgia 30303, USA; bNDP Optronics LLC, Mableton, Georgia 30126, USA; c

Dietz, Nikolaus

94

Enhancing the Light Extraction of InGaN Light-Emitting Diodes by Patterning the Dicing Streets  

Science Journals Connector (OSTI)

Patterning the dicing streets technology was used to define the high extraction efficiency region of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The external quantum...

Lin, Hung Cheng; Tseng, Yen Chun; Chyi, Jen Inn; Lee, Chia Ming

95

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a  

E-Print Network (OSTI)

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C Richard R. King,2 and Harry A. Atwater1 1 California Institute of Technology, Pasadena, California 91125, USA 2 Spectrolab, Inc., Sylmar, California 91342, USA 3 Aonex Technologies, Pasadena, California 91106

Atwater, Harry

96

Urban airshed modeling of air quality impacts of alternative transportation fuel use in Los Angeles and Atlanta  

SciTech Connect

The main objective of NREL in supporting this study is to determine the relative air quality impact of the use of compressed natural gas (CNG) as an alternative transportation fuel when compared to low Reid vapor pressure (RVP) gasoline and reformulated gasoline (RFG). A table lists the criteria, air toxic, and greenhouse gas pollutants for which emissions were estimated for the alternative fuel scenarios. Air quality impacts were then estimated by performing photochemical modeling of the alternative fuel scenarios using the Urban Airshed Model Version 6.21 and the Carbon Bond Mechanism Version IV (CBM-IV) (Geary et al., 1988) Using this model, the authors examined the formation and transport of ozone under alternative fuel strategies for motor vehicle transportation sources for the year 2007. Photochemical modeling was performed for modeling domains in Los Angeles, California, and Atlanta, Georgia.

NONE

1997-12-01T23:59:59.000Z

97

Nanoscale Materials for Thin Film Cu(In,Ga)Se2 Solar Cells  

Science Journals Connector (OSTI)

Cu(In,Ga)Se2 solar cells show the highest efficiencies of all thin film technologies. Nano-particulate precursor materials could have the potential to lead this technology to...

Ahlswede, Erik

98

Abstract--We investigate the necessary amount of network management information for light-path assessment to dynamically set  

E-Print Network (OSTI)

of Technology, Atlanta, GA 30332-0250 USA (email: guanglei@ece.gatech.edu, jic@ece.gatech.edu). V. W. S. Chan Tech. G. Liu and C. Ji are with the School of Electrical and Computer Engineering, Georgia Institute

Ji, Chuanyi

99

Using MotorMaster to Track Motor Inventory and Analyze Purchasing Decisions  

E-Print Network (OSTI)

Management Center (EEMC) Atlanta, GA mike.brown@innovate.gatech.edu ESL-IE-07-05-14 Proceedings from the Twenty-ninth Industrial Energy Technology Conference, New Orleans, LA, May 8-11, 2007. ...

Brown, M.; Meffort, W.

2007-01-01T23:59:59.000Z

100

A Piecewise Linearization Framework for Retail Shelf Space  

E-Print Network (OSTI)

Georgia Institute of Technology. Atlanta, GA ... models and to provide a solution procedure that can handle realistic problem sizes and that is flexible enough to be applied to a wide range of shelf space management models. To achieve this,.

2004-07-09T23:59:59.000Z

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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101

Across Boundaries of Influence and Accountability: The Multiple Scales of Public Sector Information Systems  

E-Print Network (OSTI)

Systems Christopher A. Le Dantec W. Keith Edwards GVU Center and School of Interactive Computing College of Computing Georgia Institute of Technology Atlanta, GA, USA {ledantec,keith}@cc.gatech.edu ABSTRACT The use

Edwards, Keith

102

Visualization and Language Processing for Supporting Analysis Across the Biomedical Literature  

E-Print Network (OSTI)

of Technology, Atlanta, GA 30332 ¾ Center for Computational Pharmacology, University of Colorado Denver School]. This flood of knowledge has been accompanied by a breakdown of disciplinary boundaries, which traditionally

Stasko, John T.

103

Timothy J. Bartness Departments of Biology and Center for Behavioral Neuroscience, Georgia State University, Atlanta, GA 30303. Gregory E. Demas Department of Biology and Program in Neural  

E-Print Network (OSTI)

University, Bloomington, IN 47405. Neurobiology of Food and Fluid Intake, 2nd Ed., Volume 14 of Handbook, and from humans, many or most of the fundamental problems in ingestive behavior 423 #12;have not been shaped by evolu- tionary forces, we might gain greater insight into the functional and adaptive signif

Demas, Greg

104

ChemKey Search Database. Heterodata, Inc. 1055 Rosewood Drive, Atlanta, GA 30306. http://euch6f.chem.emory.edu/index.html. $325.00.  

Science Journals Connector (OSTI)

The database relies on text searching only; there is no provision for structural searches. ... Entering a fragment of a search term is sufficient:? for example, ion rapidly finds all citations containing words beginning with those three characters, such as ion, ionic, ionization, etc. Entering =ion finds only ion, whereas entry of *ion finds words that contain those characters at any position, including anion and cation. ... The speed of searches is impressive:? with the exception of internal string searches (using *), which may take 30 s or so, all other searches provide results within a second or two, even with multiple search terms. ...

William H. Pearson

2007-06-02T23:59:59.000Z

105

The development of integrated chemical microsensors in GaAs  

SciTech Connect

Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

1999-11-01T23:59:59.000Z

106

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS  

E-Print Network (OSTI)

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS Robyn C. Law 1 1 Spectrolab, Inc., A Boeing Company, Sylmar, California 91342, USA 2 California Institute of Technology, Pasadena, California 91125, USA ABSTRACT Spectrolab has demonstrated the first lattice matched In

Atwater, Harry

107

Optical Science and Engineering Program Center for High Technology Materials  

E-Print Network (OSTI)

& Administration GA Graduate Assistantship HSC Health Sciences Center HVAC Heating, ventilation, and cooling IARPA for Standards and Technology NRL Naval Research Laboratory NSF National Science Foundation NSMS Nanoscience

New Mexico, University of

108

Microsoft PowerPoint - 9-07 Case Atlanta HLW techexchange.ppt  

NLE Websites -- All DOE Office Websites (Extended Search)

Calcine Disposition Project Calcine Disposition Project Joel Case Calcine Disposition Project Federal Project Director November 17, 2010 Print Close 2 2 Calcine is Solidified First & Other Cycle Raffinates * Resulted in a 7 to 1 volume reduction * Capable of being safely stored for several hundred years in 43 large shielded bins contained in six bin sets Print Close 3 3 Calcine Generation History Campaign Parameters Begin End Volume gal Volume ft 3 Volume m 3 Curies Dec- 63 Mar - 81 4,081,000 77,300 2,189 Aug - 82 May - 00 3,644,000 78,000 2,209 Total 7,725,000 155,300 4,398 3.64E+07 Print Close 4 4 Calcine Solids Storage Facility (CSSF) Status CSSF Bins Capacity (m 3 ) In Use 1 12 227 2 7 851 3 7 1,130 4 3 486 5 7 1,010 6 7 1,506 Sub 43 5,210 Not in Use 7 7 1,784 Total 50 6,994 1 2 3 4 5 6 Print Close 5 Hot Isostatic Press Treatment Technology * The Department Selected Hot Isostatic

109

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets  

SciTech Connect

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Castao, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)

2013-11-14T23:59:59.000Z

110

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network (OSTI)

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

111

The inherent inefficiency of simultaneously feasible financial transmission rights auctions  

E-Print Network (OSTI)

Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA b Department of Industrial Engineering and Operations Research, University of California, Berkeley, CA 94720, USA c School of Electrical and Computer Engineering, Georgia Institute of Technology, GA 30332, USA a b s t r a c ta r t i c l e i n f o Article

Oren, Shmuel S.

112

Impact of Fixed Exterior Shading on Daylighting: A Case Study of the David Brower Center  

E-Print Network (OSTI)

ASHRAE: Atlanta, GA. 4. Autodesk (2011). Ecotect Analysisbuilding design software (Autodesk, 2011). 34 Model geometry

Zelenay, Krystyna

2011-01-01T23:59:59.000Z

113

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

NLE Websites -- All DOE Office Websites (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

114

Advanced Design and Commissioning Tools for Energy-Efficient Building Technologies  

E-Print Network (OSTI)

Underfloor Air Distribution (UFAD) Design Guide. Atlanta:Underfloor Air Distribution (UFAD) Design Guide. Atlanta:minimized by good distribution system design whether using

Bauman, Fred; Webster, Tom; Zhang, Hui; Arens, Ed

2012-01-01T23:59:59.000Z

115

Meeting Briefs from Atlanta  

Science Journals Connector (OSTI)

"Certain organic materials have the undesirable property of increasing the dissolution of plutonium in groundwaters and potentially enhancing its transport away from a disposal site," says U.S. Geological Survey chemist Jess M. Cleveland. ... Cleveland and associates examined the groundwater near three plutonium disposal sites to find what chemical form the element was taking and what its chemical and hydrologie behaviors were under various environmental conditions. ... At Maxey Flats in Kentucky, for instance, where these organic agents are present, the researchers found water samples with as much as 300,000 picocuries (10 -12 curie) of plutonium per liter. ...

1981-04-13T23:59:59.000Z

116

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

117

Categorical Exclusion Determinations: National Energy Technology Laboratory  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3, 2011 3, 2011 CX-006451: Categorical Exclusion Determination Research and Development of an Advanced Low Temperature Heat Recovery Absorption Chiller CX(s) Applied: B3.6 Date: 08/03/2011 Location(s): Park Forest, Illinois Office(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory August 3, 2011 CX-006448: Categorical Exclusion Determination Carolina Blue Skies Initiative CX(s) Applied: A1, B5.1 Date: 08/03/2011 Location(s): Knightdale, North Carolina Office(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory August 3, 2011 CX-006446: Categorical Exclusion Determination DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project CX(s) Applied: A1, B5.1 Date: 08/03/2011 Location(s): Morrow, Georgia

118

Categorical Exclusion Determinations: National Energy Technology Laboratory  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

29, 2011 29, 2011 CX-005666: Categorical Exclusion Determination DeKalb County/Metropolitan Atlanta Alternative Fuel and Advanced Technology Vehicle Project CX(s) Applied: A1, B5.1 Date: 04/29/2011 Location(s): Marrow, Georgia Office(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory April 29, 2011 CX-005664: Categorical Exclusion Determination Development and Testing of Compact Heat Exchange Reactors (CHER) for Synthesis of Liquid Fuels CX(s) Applied: B3.6 Date: 04/29/2011 Location(s): Laramie, Wyoming Office(s): Fossil Energy, National Energy Technology Laboratory April 29, 2011 CX-005663: Categorical Exclusion Determination Vortex Tube Project Decommissioning Project CX(s) Applied: B3.6 Date: 04/29/2011 Location(s): Morgantown, West Virginia

119

2011 Wind Technologies Market Report  

E-Print Network (OSTI)

a Changing Environment. WINDPOWER 2011. Poster Presentation.Suppliers. Presentation to WINDPOWER 2012. 4 June. Atlanta,sources and others, e.g. , Windpower Monthly, the Global

Bolinger, Mark

2013-01-01T23:59:59.000Z

120

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name: GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and...

122

GaN/AlGaN ultraviolet/infrared dual-band detector G. Ariyawansa, M. B. M. Rinzan, M. Alevli, M. Strassburg, N. Dietz, and A. G. U. Pereraa  

E-Print Network (OSTI)

, Atlanta, Georgia 30303 S. G. Matsik NDP Optronics, Mableton, Georgia 30126 A. Asghar and I. T. Ferguson

Perera, A. G. Unil

123

Doubly resonant second harmonic generation of 2.0 pm light in coupled InGaAs/AIAs quantum wells  

E-Print Network (OSTI)

energiesin n-type QWs to reach the technologically important 2 pm wavelength,6,7 where compact InGaAsP and Ga. The absorption spectrum of the sample is shown in Fig. 2. Absorption peaks at Et,=300 meV (4.1

Fejer, Martin M.

124

Beta decay of Ga-62  

E-Print Network (OSTI)

We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

125

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

126

Direct analysis of cellulose in poplar stem by matrixassisted laser desorption/ionization imaging mass spectrometry  

NLE Websites -- All DOE Office Websites (Extended Search)

analysis analysis of cellulose in poplar stem by matrix- assisted laser desorption/ionization imaging mass spectrometry Seokwon Jung 1,3 , Yanfeng Chen 3 , M. Cameron Sullards 1,3 and Arthur J. Ragauskas 1,2,3 * 1 BioEnergy Science Center, Georgia Institute of Technology, 500 10 th St., Atlanta, GA 30332, USA 2 Institute of Paper Science and Technology, Georgia Institute of Technology, 500 10 th St., Atlanta, GA 30332, USA 3 School of Chemistry and Biochemistry, Georgia Institute of Technology, 901 Atlantic Drive, Atlanta, GA 30332, USA Received 10 July 2010; Revised 9 August 2010; Accepted 23 August 2010 Matrix-assisted laser desorption/ionization imaging mass spectrometry (MALDI-IMS) was applied to the analysis of the spatial distribution of cellulose on a cross-section of juvenile poplar (Populus deltoids) stems. Microcrystalline cellulose (MCC) was used to optimize matrix (2,5-dihydroxybenzoic

127

GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study  

SciTech Connect

The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

2010-10-14T23:59:59.000Z

128

High efficiency InGaAs solar cells on Si by InP layer transfer James M. Zahler  

E-Print Network (OSTI)

High efficiency InGaAs solar cells on Si by InP layer transfer James M. Zahler Aonex Technologies, Pasadena, California 91106 Katsuaki Tanabea Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125 Corinne Ladous and Tom Pinnington Aonex Technologies

Atwater, Harry

129

RECIPIENT:Gwinnett Co, GA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

130

Novel GaAs Devices  

Science Journals Connector (OSTI)

As the dimensions of GaAs devices shrink, the effective electron velocity should increase, leading to a shorter transit time and to a ballistic or near-ballistic mode of operation (see Chapter 2). At the same ...

Michael Shur

1987-01-01T23:59:59.000Z

131

Accurate characterization and improvement of GaAs microstrip attenuation  

E-Print Network (OSTI)

Mason Carroll, B. S. , Rose-Hulman Institute of Technology Chair of Advisory Committee: Dr. Kai Chang Microstrip transmission lines are widely used in microv, ave circuits. The high frequencies cause the microstrip characteristics, especially... OF CONTENTS . . LIST OF FIGURES LIST OF TABLES. . CHAPTER I INTRODUCTION . . I. A Introduction. I. B Thesis Research Il GaAs MICROSTRlp ATTENUATION . II. A Characterization ol'Transmission Line Attenuation. . . . II. A. I Introduction. II. A. 2...

Carroll, James Mason

2012-06-07T23:59:59.000Z

132

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

133

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

134

Vehicle Technologies Office Merit Review 2014: Advanced Low-Cost...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives Vehicle Technologies Office Merit Review 2014: Advanced Low-Cost SiC and...

135

3/5/09 11:36 AMTech composes the music of fish | ajc.com Page 1 of 3http://www.ajc.com/metro/content/metro/atlanta/stories/2009/02/22/tech_music_fish.html  

E-Print Network (OSTI)

3/5/09 11:36 AMTech composes the music of fish | ajc.com Page 1 of 3http://www.ajc.com/metro/content/metro/atlanta/stories/2009/02/22/tech_music_fish.html Enlarge this image CURTIS COMPTON / ccompton@ajc.com Dr. Bruce Walker (right), project lead, and researcher Carrie Bruce watch fish during work on a Center for Music

136

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

137

High Efficiency Large Area AlGaAs/GaAs Concentrator Solar Cells  

Science Journals Connector (OSTI)

A 1-kWp ( peak at 100 mw/cm2 incident power dencity ) concentrating photovoltaic array with 180 square Presnel plastic lenses and AlGaAs/GaAs concentrator solar cells has been constructed. The AlGaAs/GaAs concetr...

S. Yoshida; K. Mitsui; T. Oda; Y. Yukimoto

1981-01-01T23:59:59.000Z

138

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

139

Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization  

SciTech Connect

In this communication we report on electrical properties of nonintentionally doped (nid) type II InAs/GaSb superlattice grown by molecular beam epitaxy. We present a simple technological process which, thanks to the suppression of substrate, allows direct Hall measurement on superlattice structures grown on conductive GaSb substrate. Two samples were used to characterize the transport: one grown on a semi-insulating GaAs substrate and another grown on n-GaSb substrate where a etch stop layer was inserted to remove the conductive substrate. Mobilities and carrier concentrations have been measured as a function of temperature (77-300 K), and compared with capacitance-voltage characteristic at 80 K of a photodiode comprising a similar nid superlattice.

Cervera, C.; Rodriguez, J. B.; Perez, J. P.; Aiet-Kaci, H.; Chaghi, R.; Christol, P. [Institut d'Electronique du Sud (IES), UMR CNRS 5214, Case 067, Universite Montpellier 2, 34095 Montpellier Cedex 05 (France); Konczewicz, L.; Contreras, S. [Groupe d'Etude des Semiconducteurs (GES), UMR CNRS 5650, Case 074, Universite Montpellier 2, 34095 Montpellier Cedex 5 (France)

2009-08-01T23:59:59.000Z

140

GaAsbased quantum cascade lasers  

Science Journals Connector (OSTI)

...N. Murdin GaAs-based quantum cascade lasers Sirtori H. Page C. Becker...state-of-the-art of GaAs-based quantum cascade lasers. These new light sources...2000.0739 GaAs-based quantum cascade lasers By C. Sirtori, H. Page...

2001-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Digitizer Auditory Graph: Making Graphs Accessible to the Visually  

E-Print Network (OSTI)

.2 Social Issues: Assistive technologies for persons with disabilities Copyright is held by the author 30332 USA heejoong@gatech.edu Bruce N. Walker Sonification Lab, Schools of Psychology and Interactive Computing Georgia Institute of Technology 654 Cherry St. Atlanta, GA 30332 USA bruce

142

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

143

Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer  

Science Journals Connector (OSTI)

A surface plasmon (SP)-enhanced nanoporous GaN-based green LED based on top-down processing technology has been successfully fabricated. This SP-enhanced LED consists of nanopores...

Yu, Zhi-Guo; Zhao, Li-Xia; Wei, Xue-Cheng; Sun, Xue-Jiao; An, Ping-Bo; Zhu, Shi-Chao; Liu, Lei; Tian, Li-Xin; Zhang, Feng; Lu, Hong-Xi; Wang, Jun-Xi; Zeng, Yi-Ping; Li, Jin-Min

2014-01-01T23:59:59.000Z

144

Coulomb excitation of 73Ga  

E-Print Network (OSTI)

The B(E2; Ii -> If) values for transitions in 71Ga and 73Ga were deduced from a Coulomb excitation experiment at the safe energy of 2.95 MeV/nucleon using post-accelerated beams of 71,73Ga at the REX-ISOLDE on-line isotope mass separator facility. The emitted gamma rays were detected by the MINIBALL-detector array and B(E2; Ii->If) values were obtained from the yields normalized to the known strength of the 2+ -> 0+ transition in the 120Sn target. The comparison of these new results with the data of less neutron-rich gallium isotopes shows a shift of the E2 collectivity towards lower excitation energy when adding neutrons beyond N = 40. This supports conclusions from previous studies of the gallium isotopes which indicated a structural change in this isotopical chain between N = 40 and N = 42. Combined with recent measurements from collinear laser spectroscopy showing a 1/2- spin and parity for the ground state, the extracted results revealed evidence for a 1/2-; 3/2- doublet near the ground state in 73 31Ga42 differing by at most 0.8 keV in energy.

J. Diriken; I. Stefanescu; D. Balabanski; N. Blasi; A. Blazhev; N. Bree; J. Cederkll; T. E. Cocolios; T. Davinson; J. Eberth; A. Ekstrm; D. V. Fedorov; V. N. Fedosseev; L. M. Fraile; S. Franchoo; G. Georgiev; K. Gladnishki; M. Huyse; O. V. Ivanov; V. S. Ivanov; J. Iwanicki; J. Jolie; T. Konstantinopoulos; Th. Krll; R. Krcken; U. Kster; A. Lagoyannis; G. Lo Bianco; P. Maierbeck; B. A. Marsh; P. Napiorkowski; N. Patronis; D. Pauwels; P. Reiter; M. Seliverstov; G. Sletten; J. Van de Walle; P. Van Duppen; D. Voulot; W. B. Walters; N. Warr; F. Wenander; K. Wrzosek

2010-10-13T23:59:59.000Z

145

Growth and development of GaInAsP for use in high-efficiency solar cells. Final subcontract report, 1 July 1991--30 December 1993  

SciTech Connect

This report describes accomplishments during Phase 3 of this subcontract. The overall goals of the subcontract were (1) to develop the necessary technology to grow high-efficiency GaInAsP layers that are lattice-matched to GaAs and Ge; (2) to demonstrate highefficiency GaInAsP single-junction solar cells; and (3) to demonstrate GaInAsP/Ge cascade solar cells suitable for operation under concentrated (500X) sunlight. The major accomplishments during Phase 3 include (1) demonstrating a GaInAsP tunnel diode for use as an interconnect in the GaInAsP/Ge cascade cell, and (2) demonstrating a GaInAsP/Ge cascade cell. The development of the GaInAsP tunnel diode is a major accomplishment because it allows for the GaInAsP and Ge cells to be connected without optical losses for the bottom Ge cell, such as a Ge tunnel diode would cause. The GaInAsP/Ge cascade cell development is significant because of the demonstration of a cascade cell with a new materials system.

Sharps, P.R. [Research Triangle Inst., Research Triangle Park, NC (United States)

1994-10-01T23:59:59.000Z

146

Charakterisierung und Prparation von GaN und Herstellung von In-Plane-Gate Transistoren in AlxGa1-xN/GaN Heterostrukturen.  

E-Print Network (OSTI)

??Gegenstand der Arbeit sind GaN-Volumenmaterial und AlxGa1-xN/GaN HEMTs (high electron mobility transistor), welche ein zweidimensionales Elektronengas (2DEG) besitzen. Die Materialien wurden durch elektrische Messungen, insbesondere (more)

Ebbers, Andr

2003-01-01T23:59:59.000Z

147

ENGINEERING TECHNOLOGY Engineering Technology  

E-Print Network (OSTI)

, Mechatronics Technology, and Renewable Energy Technology. Career Opportunities Graduates of four: business administration, wind farm management, aircraft maintenance, tooling production, quality and safety or selected program track focus. Transfer students must talk to their advisor about transferring their courses

148

ENGINEERING TECHNOLOGY Engineering Technology  

E-Print Network (OSTI)

: business administration, energy management, wind farm management, automation and controls, aircraft, Mechatronics Technology, and Renewable Energy Technology. Career Opportunities Graduates of four students must talk to their advisor about transferring their courses over for WSU credit. Laboratory

149

Building Technologies Office: Emerging Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Emerging Technologies Emerging Technologies Printable Version Share this resource Send a link to Building Technologies Office: Emerging Technologies to someone by E-mail Share Building Technologies Office: Emerging Technologies on Facebook Tweet about Building Technologies Office: Emerging Technologies on Twitter Bookmark Building Technologies Office: Emerging Technologies on Google Bookmark Building Technologies Office: Emerging Technologies on Delicious Rank Building Technologies Office: Emerging Technologies on Digg Find More places to share Building Technologies Office: Emerging Technologies on AddThis.com... About Take Action to Save Energy Partner with DOE Activities Technology Research, Standards, & Codes Popular Links Success Stories Previous Next Lighten Energy Loads with System Design.

150

Empower Energy Technology | Open Energy Information  

Open Energy Info (EERE)

Empower Energy Technology Empower Energy Technology Jump to: navigation, search Logo: Empower Energy Technology Name Empower Energy Technology Address 245 N. Highland Avenue, Suite 230.162 Place Atlanta, Georgia Zip 30307 Sector Solar Year founded 2007 Number of employees 1-10 Phone number 4046813270 Website http://www.empoweret.com Coordinates 33.761667°, -84.359808° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.761667,"lon":-84.359808,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

151

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

152

Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys  

Science Journals Connector (OSTI)

Using large (512-atom) pseudopotential supercell calculations, we have investigated the composition dependence of the momentum matrix element Mv,c for transitions between the valence-band maximum and the conduction-band minimum of three semiconductor alloys:?GaP1-xNx and GaAs1-xNx, exhibiting large chemical and size differences between their alloyed elements, and GaP1-xAsx, which is a weakly perturbed alloy. In the composition ranges where these alloys have a direct band gap, we find that (i) in GaP1-xAsx, Mv,c is large (like the virtual-crystal value) and nearly composition independent; (ii) in GaAs1-xNx, Mv,c is strongly composition dependent: large for small x and small for large x; and (iii) in GaP1-xNx, Mv,c is only slightly composition dependent and is significantly reduced relative to the virtual-crystal value. The different behavior of GaP1-xAsx, GaP1-xNx, and GaAs1-xNx is traced to the existence/absence of impurity levels at the dilute alloy limits: (a) there are no gap-level impurity states at the x?1 or x?0 limits of GaP1-xAsx, (b) an isolated As impurity in GaN (GaN?:As) has a deep band gap impurity level but no deep impurity state is found for N in GaAs, and (c) GaN?:P exhibits a P-localized deep band-gap impurity state and GaP?:N has an N-localized resonant state. The existence of deep levels leads to wave-function localization in real space, thus to a spectral spread in momentum space and to a reduction of Mv,c. These impurity levels are facilitated by atomic relaxations, as evident by the fact that unrelaxed GaN?:As and GaN?:P, show no deep levels, have extended wave functions, and have large interband transition elements.

L. Bellaiche; Su-Huai Wei; Alex Zunger

1997-10-15T23:59:59.000Z

153

International Truck | Open Energy Information  

Open Energy Info (EERE)

Truck Truck Jump to: navigation, search Name International Truck Place Atlanta, GA Website http://www.internationaltruck. References International Truck[1] Information About Partnership with NREL Partnership with NREL Yes Partnership Type Other Relationship Partnering Center within NREL Transportation Technologies and Systems Partnership Year 2007 LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! International Truck is a company located in Atlanta, GA. References ↑ "International Truck" Retrieved from "http://en.openei.org/w/index.php?title=International_Truck&oldid=381698" Categories: Clean Energy Organizations Companies Organizations What links here Related changes Special pages Printable version Permanent link

154

November 9, 2011 Planned Development Amendment  

E-Print Network (OSTI)

105 Tempe, AZ 85281 Cleanroom, HP Imaging, HPM HOK 191 Peachtree St. Suite 4100 Atlanta, GA 30303 Lab

Pritchard, Jonathan

155

The Red-Cockaded Woodpecker: A Selectively Annotated Bibliography  

E-Print Network (OSTI)

species act. In TAPPI Proceedings of International1085-1092). Atlanta, GA: TAPPI Press. Provides a detailed

Wishard, Lisa

1998-01-01T23:59:59.000Z

156

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

157

Princeton Plasma Physics Lab - General Atomics (GA)  

NLE Websites -- All DOE Office Websites (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
158

Energy Efficient Commercial Technologies  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Commercial Technologies April 11th, 2012 Presented by: Warren Willits Energy Solutions Center (202) 824-7150 www.ESCenter.org Federal Utility Partnership Working Group Spring 2012 Jekyll Island, GA Todays Energy Efficient Technologies  Water Heating  Heating  Air Conditioning  Humidity Control  CHP / Cogeneration Atmospheric Direct Vent High Efficiency .7 EF Atmospheric water heaters now available 97 % efficient tank water heaters now available Traditional Tank Style Water Heating  Tankless Water Heaters  EF = .82 Standard Unit  EF = .97 Condensing  Solar Water Heaters  With H.E. gas back up systems Newer Water Heaters Water Heater Life Cycle Cost Life Cycle Costs Electric Tank Water Heater Gas Water Heater

159

Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs  

SciTech Connect

We have studied photoluminescence (PL) from individual isoelectronic traps formed by nitrogen-nitrogen (NN) pairs in GaAs. Sharp emission lines due to exciton and biexciton were observed from individual isoelectronic traps in nitrogen atomic-layer doped (ALD) GaAs. The binding energy of biexciton bound to individual isoelectronic traps was approximately 8 meV. Both the exciton and biexciton luminescence lines show completely random polarization and no fine-structure splitting. These results are desirable to the application to the quantum cryptography used in the field of quantum information technology.

Takamiya, Kengo; Fukushima, Toshiyuki; Yagi, Shuhei; Hijikata, Yasuto; Yaguchi, Hiroyuki [Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku , Saitama 338-8570 (Japan); Mochizuki, Toshimitsu; Yoshita, Masahiro; Akiyama, Hidefumi [Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Kuboya, Shigeyuki; Onabe, Kentaro [Department of Advanced Materials Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Katayama, Ryuji [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

2013-12-04T23:59:59.000Z

160

Preview of AAAS Meeting, Atlanta  

Science Journals Connector (OSTI)

...Science Teachers Association. Arranged by Katherine Hertzka, Hoke Smith High School and...Bradford D. Ansley, Edwina Davis, and Katherine Barnwell. Roland H. Berg will preside...of Business-Administration. George Wheeler, Oglethorpe Univer-sity. Committee...

Raymond L. Taylor

1955-12-02T23:59:59.000Z

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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161

Preview of AAAS Meeting, Atlanta  

Science Journals Connector (OSTI)

...Laboratories; Clyde L. 'Cowan, Jr., Los Alamos Scien-tific Laboratory; Arthur E...Pharmaceuti-cals. Color; 15 min. The Suspension Bridge. U.S. Steel Corp. Color...Dal-las, and San Francisco; 9,300 employees are engaged in the annual production...

Raymond L. Taylor

1955-12-02T23:59:59.000Z

162

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

163

Graph-Theoretic Connectivity Control of Mobile  

E-Print Network (OSTI)

exploration, surveillance, and recon- naissance, to cooperative construction and manipulation. The success]­[23]. This research has given rise to connectivity or topology control algorithms that regulate the transmission power is with the Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA (e

Pappas, George J.

164

Conductive Anodic Filament Enhancement the Presence of a Polyglycol -Containing Flux  

E-Print Network (OSTI)

Institute of Technology Atlanta, GA 30332-0245 Under certain environmental conditions, printed wiring boards (CAF), is a result of an electrochemical corrosion process that initiates at the anode and proceeds process involves two steps [2]. The first is a physical degradation of the fibedepoxy bond

Bennett, Gisele

165

Phil. Trans. R. Soc. A (2011) 369, 130 doi:10.1098/rsta.2011.0160  

E-Print Network (OSTI)

JIAN2 1School of Earth and Atmospheric Sciences, Georgia Institute of Technology, Atlanta, GA, USA 2, floods were anticipated in 2007 and 2008, with broad actions taking place in advance of the floods on the Yangtze are shown as blue dots. cyclones, prolonged droughts and flooding are extreme environmental events

Webster, Peter J.

166

The BioEnergy Science Center (BESC) is a U.S. Department of Energy Bioenergy Research Center supported by the Office of Biological and Environmental Research in the DOE Office of Science Pseudo-lignin Chemistry and Its Impact  

E-Print Network (OSTI)

The BioEnergy Science Center (BESC) is a U.S. Department of Energy Bioenergy Research Center and Biochemistry, BioEnergy Science Center Georgia Institute of Technology, Atlanta, GA *Presenter: arthur by the DOE office of Biological and Environmental Research through the BioEnergy Science Center (BESC). 10 µm

Das, Suman

167

American Institute of Aeronautics Astronautics DEVELOPMENT OF UNSTEADINESS IN A ROTOR WAKE  

E-Print Network (OSTI)

- speed forward flight (or cross-wind), where the wake is swept behind the rotor, the effect of ground1 American Institute of Aeronautics Astronautics DEVELOPMENT OF UNSTEADINESS IN A ROTOR WAKE Georgia Institute of Technology Atlanta, GA 30332-0150 ABSTRACT The flow field around the rotor in ground

168

e-mail: aamato3@mail.gatech.edu D. Scarborough  

E-Print Network (OSTI)

saline aquifiers or used for enhanced oil recovery EOR or enhanced coal bed methane recovery ECBM 2. Lieuwen Ben T. Zinn Combustion Laboratory, Georgia Institute of Technology, Atlanta, GA 30318 Methane/CO2 flames have slower chemical kinetics than methane-air flames and as such, flame stability is more

Lieuwen, Timothy C.

169

Optimal Velocity Profile Generation for given Acceleration Limits; The Half-Car Model Case  

E-Print Network (OSTI)

average curvature, or a path of minimum combined cost. Since the dynamics of the vehicle are not included. Velenis and P. Tsiotras Georgia Institute of Technology School of Aerospace Engineering, Atlanta, GA, USA is an extension of [1] where a point-mass model of the vehicle was used. The acceleration envelope of the vehicle

Tsiotras, Panagiotis

170

Abstract ED01-01: mHealth and disparities: Can mobile bridge the digital divide?  

Science Journals Connector (OSTI)

...6-9, 2013; Atlanta, GA Abstract ED01-01: mHealth and disparities: Can mobile bridge the digital...now much easier to reach with mobile health, or mHealth, interventions. mHealth interventions can leverage many technological features...

Jay M. Bernhardt

2014-11-01T23:59:59.000Z

171

Journal of Magnetism and Magnetic Materials 281 (2004) 272275 Effects of high magnetic field annealing on texture and  

E-Print Network (OSTI)

Journal of Magnetism and Magnetic Materials 281 (2004) 272­275 Effects of high magnetic field annealing on texture and magnetic properties of FePd D.S. Lia, *, H. Garmestania , Shi-shen Yanb , M of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Dr. N.W., Atlanta, GA

Garmestani, Hamid

172

Synergistic Coupling of SSD and Hard Disk for QoS-aware Virtual Memory Ke Liu Xuechen Zhang Kei Davis Song Jiang  

E-Print Network (OSTI)

Alamos, NM 87545, USA Abstract--With significant advantages in capacity, power con- sumption, and price Institute of Technology Los Alamos National Laboratory Detroit, MI 48202, USA Atlanta, GA 30332, USA Los memory to the hard disk if they are expected to be read together. Using a history of page access patterns

Jiang, Song

173

In Future of Software Engineering, 22nd International Conference on Software Engineering, June 2000. Testing: A Roadmap  

E-Print Network (OSTI)

. Testing: A Roadmap Mary Jean Harrold College of Computing Georgia Institute of Technology 801 Atlantic Drive Atlanta, GA 30332-0280 harrold@cc.gatech.edu ABSTRACT Testing is an important process that is performed to support quality assurance. Testing activities support quality assurance by gathering

Harrold, Mary Jean

174

V-band Integrated Filter and Antenna for LTCC Front-End modules  

E-Print Network (OSTI)

, School of Electrical and Computer Engineering Georgia Institute of Technology, Atlanta, GA 30332-speed internet access, video streaming, content downloads, and wireless data bus for cable replacement [1-cost manufacturing, and excellent performance achieved by a high level of integration of embedded functions using low

Tentzeris, Manos

175

Electrical-Thermal Co-analysis for Power Delivery Networks in 3D System Integration  

E-Print Network (OSTI)

Electrical-Thermal Co-analysis for Power Delivery Networks in 3D System Integration Jianyong Xie1 Rubin3 1 School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 2 IBM Package Design, Development, and Electrical Services Group, Poughkeepsie, N.Y. 12601 3 IBM T

Swaminathan, Madhavan

176

Modeling thermal conductivity in UO2 with BeO additions as a function of microstructure  

E-Print Network (OSTI)

, increases fission gas re- lease during irradiation and stores energy in the fuel, decreasing safety margins fission rate. Regardless of the spe- cific nuclear fuel design, the fuel is subject to temperature of Technology, 771 Ferst Dr. Atlanta, GA 30332-0245, USA b Department of Mechanical Engineering, Florida A

177

Bioinspired Slowness for Robotic Systems Ronald C. Arkin  

E-Print Network (OSTI)

Bio­inspired Slowness for Robotic Systems Ronald C. Arkin Mobile Robot Laboratory School of Interactive Computing Georgia Institute of Technology Atlanta, GA USA 30332 arkin@gatech.edu Abstract: Slowness in robotic systems is a quality that is typically undervalued. It is our contention

178

Bio-inspired Slowness for Robotic Systems Ronald C. Arkin  

E-Print Network (OSTI)

Bio-inspired Slowness for Robotic Systems Ronald C. Arkin Mobile Robot Laboratory School of Interactive Computing Georgia Institute of Technology Atlanta, GA USA 30332 arkin@gatech.edu Abstract: Slowness in robotic systems is a quality that is typically undervalued. It is our contention

179

American Institute of Aeronautics and Astronautics Evaluation of Chemiluminescence as a Combustion  

E-Print Network (OSTI)

as a Combustion Diagnostic under Varying Operating Conditions Venkata Nori1 and Jerry Seitzman2 Ben T. Zinn Combustion Lab Guggenheim School of Aerospace Engineering Georgia Institute of Technology Atlanta GA-30332 methane and syngas (H2/CO) flames. The effect of pressure, reactant preheat, aerodynamic strain, fuel

Seitzman, Jerry M.

180

ExperimentalVerification of Vibration Absorbers Combinedwith Input Shaping for Oscillatory Systems  

E-Print Network (OSTI)

ExperimentalVerification of Vibration Absorbers Combinedwith Input Shaping for Oscillatory Systems of Technology Atlanta, GA 30332 ABSTRACT Systems that exhibit flexible dynamics are susceptible to vibration choice to deal with these vibrations, but in many cases, it is insufficient or difficult to implement

Singhose, William

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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181

AMO Industry Day Workshop, February 25th, Targets Smart Manufacturing FOA  

Energy.gov (U.S. Department of Energy (DOE))

AMO will host an Industry Day workshop to explain the concept, vision, and technology needs associated with support for a Clean Energy Manufacturing Innovation Institute on Smart Manufacturing. The workshop will take place on Wednesday, February 25, 2015 at the Georgia Tech Global Learning Center, Atlanta, GA.

182

Regularization of the Burnett Equations for Fast Granular Flows via Relaxation School of Mathematics  

E-Print Network (OSTI)

­Enskog expansion to derive con­ stitutive relations for the pressure deviator P, heat flux q, and rate of energy of Mathematics Georgia Institute of Technology Atlanta, GA 30332 email: jin@math.gatech.edu Marshall Slemrod.S.­Israel Binational Science Foundation Grant. 1 #12; Nomenclature b body force B subset of Euclidean space div

Jin, Shi

183

FREQUENCY DOMAIN INSTANTANEOUS WAVENUMBER ESTIMATION FOR DAMAGE QUANTIFICATION IN LAYERED PLATE STRUCTURES  

E-Print Network (OSTI)

FREQUENCY DOMAIN INSTANTANEOUS WAVENUMBER ESTIMATION FOR DAMAGE QUANTIFICATION IN LAYERED PLATE, US 3 G. W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA of promising techniques for the identification and the characterization of damage in plate structures. Among

Boyer, Edmond

184

1 Copyright 2006 by ASME Proceedings of GT2006  

E-Print Network (OSTI)

prompted the gas turbine industry to develop cleaner, more environmentally friendly power and propulsion gas turbines, which employ lean premixed (or partially premixed) combustors, is often limited of Aerospace Engineering Georgia Institute of Technology Atlanta, GA ABSTRACT The performance of dry, low NOx

Seitzman, Jerry M.

185

45th AIAA Aerospace Sciences Meeting and Exhibit AIAA-2007-0173 Reno, Nevada, 8 -11 Jan 2007  

E-Print Network (OSTI)

. Seitzman School of Aerospace Engineering Georgia Institute of Technology Atlanta, GA, USA Gas turbine, and with low NOx emissions making it an exciting option for ground power and aircraft gas turbines. Various turbine industry to develop cleaner, more environmentally friendly power and propulsion systems, while

Seitzman, Jerry M.

186

Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy  

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

187

The growth of CdTe/GaAs heteroepitaxial films by metalorganic chemical vapor deposition  

Science Journals Connector (OSTI)

A process for the growth of CdTe/GaAs heteroepitaxialfilms using metalorganic chemical vapor deposition(MOCVD) has been developed. The initial results of the determination of the deposition mechanism are reported. A pilot production demonstration using experimentally determined operating conditions has been completed. This is the first reported pilot production of CdTe/GaAs using 2 in. diam GaAs substrates in a multiple slice commercially manufactured MOCVD system. The results reported therein demonstrate that MOCVD is a reliable reproducible production worthy process for preparation of CdTe/GaAs heterostructures. These results are applicable to a wide variety of CdTe based device technologies including IR detection fiber optics solar cells and others.

Philip L. Anderson

1986-01-01T23:59:59.000Z

188

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network (OSTI)

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

189

Technology Transfer: Available Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

test test Please refer to the list of technologies below for licensing and research collaboration availability. If you can't find the technology you're interested in, please contact us at TTD@lbl.gov. Energy ENERGY EFFICIENT TECHNOLOGIES Aerosol Sealing Aerosol Remote Sealing System Clog-free Atomizing and Spray Drying Nozzle Air-stable Nanomaterials for Efficient OLEDs Solvent Processed Nanotube Composites OLEDS with Air-stable Structured Electrodes APIs for Online Energy Saving Tools: Home Energy Saver and EnergyIQ Carbon Dioxide Capture at a Reduced Cost Dynamic Solar Glare Blocking System Electrochromic Device Controlled by Sunlight Electrochromic Windows with Multiple-Cavity Optical Bandpass Filter Electrochromic Window Technology Portfolio Universal Electrochromic Smart Window Coating

190

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

191

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

192

Solid-State Lighting Issue 11: Selected Business & Technology News  

NLE Websites -- All DOE Office Websites (Extended Search)

1: BUSINESS AND TECHNOLOGY NEWS 1: BUSINESS AND TECHNOLOGY NEWS (Mid-October 2001 to early February 2002) A selection of news appears in this section. Where possible, links to full-text articles and press releases have been included in the abstracts. Click on the links in the table below to go directly to the abstract. Table of Contents: Business and Technology News · Arima Optoelectronics will expand ultra-high-brightness LED production. · AXT producing brighter AlInGaN HB-LEDs; company expanding fab facilities in China. · BMDO changing its name to the Missile Defense Agency (MDA). · Brown University/Agilent/Lumileds researchers create a monolithic dual-wavelength InGaN LED. · Cermet receives BMDO contracts to develop bulk GaN substrate and GaN FET technology.

193

Technology Transfer: Available Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Please refer to the list of technologies below for licensing and research Please refer to the list of technologies below for licensing and research collaboration availability. If you can't find the technology you're interested in, please contact us at TTD@lbl.gov. Biotechnology and Medicine DIAGNOSTICS AND THERAPEUTICS CANCER CANCER PROGNOSTICS 14-3-3 Sigma as a Biomarker of Basal Breast Cancer ANXA9: A Therapeutic Target and Predictive Marker for Early Detection of Aggressive Breast Cancer Biomarkers for Predicting Breast Cancer Patient Response to PARP Inhibitors Breast Cancer Recurrence Risk Analysis Using Selected Gene Expression Comprehensive Prognostic Markers and Therapeutic Targets for Drug-Resistant Breast Cancers Diagnostic Test to Personalize Therapy Using Platinum-based Anticancer Drugs Early Detection of Metastatic Cancer Progenitor Cells

194

Technology Transfer: Available Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Software and Information Technologies Software and Information Technologies Algorithm for Correcting Detector Nonlinearites Chatelet: More Accurate Modeling for Oil, Gas or Geothermal Well Production Collective Memory Transfers for Multi-Core Processors Energy Efficiency Software EnergyPlus:Energy Simulation Software for Buildings Tools, Guides and Software to Support the Design and Operation of Energy Efficient Buildings Flexible Bandwidth Reservations for Data Transfer Genomic and Proteomic Software LABELIT - Software for Macromolecular Diffraction Data Processing PHENIX - Software for Computational Crystallography Vista/AVID: Visualization and Allignment Software for Comparative Genomics Geophysical Software Accurate Identification, Imaging, and Monitoring of Fluid Saturated Underground Reservoirs

195

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network (OSTI)

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

196

HTGR Fuel Technology Program. Semiannual report for the period ending March 31, 1983  

SciTech Connect

This document reports the technical accomplishments of the HTGR Fuel Technology Program at GA Technologies Inc. during the first half of FY 83. The activities include the fuel process, fuel materials, fuel cycle, fission product transport, core component verification, and core technology transfer tasks necessary to support the design and development of a steam cycle/cogeneration (SC/C) version of the HTGR.

Not Available

1983-07-01T23:59:59.000Z

197

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

198

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

199

Ohmic contacts to n-GaSb  

E-Print Network (OSTI)

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

200

ZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY M.A. Contreras, 2  

E-Print Network (OSTI)

) photovoltaic technology is motivated primarily by the potential to enhance solar cell current generationZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY 1 M.A. Contreras, 2 T. Nakada, 2 M of 18.6% for Cu(In,Ga)Se2 solar cells that incorporate a ZnS(O,OH) buffer layer as an alternative to Cd

Sites, James R.

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
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to obtain the most current and comprehensive results.


201

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

202

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

203

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

204

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction  

Science Journals Connector (OSTI)

We report a nondestructive large-area method to characterize dislocation formation at a highly lattice-mismatched interface. The analysis is based on x-ray diffraction and reciprocal space mapping using a standard lab-based diffractometer. We use this technique to identify and analyze a two-dimensional array of 90 misfit dislocations at a GaSb/GaAs interface. The full width at half maximum of the GaSb 004 reciprocal lattice point is shown to decrease with increasing GaSb epilayer thickness as expected from theoretical models. Based on these measurements the variation in the spatial dislocation frequency is calculated to be 1%.

Charles J. Reyner; Jin Wang; Kalyan Nunna; Andrew Lin; Baolai Liang; Mark S. Goorsky; D. L. Huffaker

2011-01-01T23:59:59.000Z

205

GaNInGaN LED efficiency reduction from parasitic electron currents in p-GaN  

Science Journals Connector (OSTI)

Abstract This paper presents observations of a previously unidentified source of performance limitation for GaNInGaN LED devices. While most studies focus on output saturation known as current droop from InGaN layer effects, we show an alike influence from p-type GaNs inherent background electron concentration. p-GaN material was investigated to confirm that, even though the material had an excess of holes, the background electrons were indeed present and were influencing the charge flow across device electrodes. This current does not cross LED heterojunctions but rather drifts toward its proximal device electrode, causing a source of heating while providing no carriers for light emitting recombination. The effects of this current were explored in an LED configuration, whose output showed weak efficiency at very low biases in addition to that from current droop. While the shortcoming under small currents has previously been attributed to electron tunneling across the junction, we propose that the background electrons inside p-GaN could be another explanation.

G. Togtema; V. Georgiev; D. Georgieva; R. Gergova; K.S.A. Butcher; D. Alexandrov

2015-01-01T23:59:59.000Z

206

High Efficiency m-plane LEDs on Low Defect Density Bulk GaN Substrates  

SciTech Connect

Solid-state lighting is a key technology for reduction of energy consumption in the US and worldwide. In principle, by replacing standard incandescent bulbs and other light sources with sources based on light-emitting diodes (LEDs), ultimate energy efficiency can be achieved. The efficiency of LEDs has improved tremendously over the past two decades, however further progress is required for solid- state lighting to reach its full potential. The ability of an LED at converting electricity to light is quantified by its internal quantum efficiency (IQE). The material of choice for visible LEDs is Gallium Nitride (GaN), which is at the basis of blue-emitting LEDs. A key factor limiting the performance of GaN LEDs is the so-called efficiency droop, whereby the IQE of the LED decreases significantly at high current density. Despite decades of research, efficiency droop remains a major issue. Since high-current operation is necessary for practical lighting applications, reducing droop is a major challenge for the scientific community and the LED industry. Our approach to solving the droop issue is the use of newly available low-defect-density bulk GaN non-polar substrates. In contrast to the standard foreign substrates (sapphire, silicon carbide, silicon) used in the industry, we have employed native bulk GaN substrates with very low defect density, thus ensuring exquisite material quality and high IQE. Whereas all commercial LEDs are grown along the c-plane crystal direction of GaN, we have used m-plane non-polar substrates; these drastically modify the physical properties of the LED and enable a reduction of droop. With this approach, we have demonstrated very high IQE performance and low droop. Our results focused on violet and blue LEDs. For these, we have demonstrated very high peak IQEs and current droops of 6% and 10% respectively (up to a high current density of 200A.cm-2). All these results were obtained under electrical operation. These high IQE and low droop values are in line with the programs milestones. They demonstrate that bulk non-polar GaN substrates represent a disruptive technology for LED performance. Application of this technology to real-world products is feasible, provided that the cost of GaN substrates is compatible with the markets requirement.

David, Aurelien

2012-10-15T23:59:59.000Z

207

Emerging Technologies  

Energy.gov (U.S. Department of Energy (DOE))

The Emerging Technologies (ET) Program of the Building Technologies Office (BTO) supports applied research and development (R&D) for technologies, systems, and models that contribute to building energy consumption.

208

Technology Transfer  

NLE Websites -- All DOE Office Websites (Extended Search)

Technology Transfer Since 1974, the Federal Laboratory Consortium (FLC) Award for Excellence in Technology Transfer has recognized scientists and engineers at federal government...

209

Tools & Technologies  

Energy.gov (U.S. Department of Energy (DOE))

Weprovide leadership for transforming workforce development through the power of technology. It develops corporate educational technology policy and enables the use of learning tools and...

210

GaTe semiconductor for radiation detection  

DOE Patents (OSTI)

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

211

Technology Transfer: Available Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Ion Sources and Beam Technologies Ion Sources and Beam Technologies GENERATORS AND DETECTORS Compact, Safe and Energy Efficient Neutron Generator Fast Pulsed Neutron Generator High Energy Gamma Generator Lithium-Drifted Silicon Detector with Segmented Contacts Low Power, High Energy Gamma Ray Detector Calibration Device Nested Type Coaxial Neutron Generator Neutron and Proton Generators: Cylindrical Neutron Generator with Nested Option, IB-1764 Neutron-based System for Nondestructive Imaging, IB-1794 Mini Neutron Tube, IB-1793a Ultra-short Ion and Neutron Pulse Production, IB-1707 Mini Neutron Generator, IB-1793b Compact Spherical Neutron Generator, IB-1675 Plasma-Driven Neutron/Gamma Generators Portable, Low-cost Gamma Source for Active Interrogation ION SOURCES WITH ANTENNAS External Antenna for Ion Sources

212

Exploration Technologies Technology Needs Assessment  

Energy.gov (U.S. Department of Energy (DOE))

The Exploration Technologies Needs Assessment is a critical component of ongoing technology roadmapping efforts, and will be used to guide the program's research and development.

213

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a  

E-Print Network (OSTI)

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a Anna Fontcuberta i Morral,b and Harry, Pasadena, California 91125 Daniel J. Aiken Emcore Photovoltaics, Albuquerque, New Mexico 87123 Mark W. Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 19 March 2006; accepted 26

Atwater, Harry

214

Energy Technologies  

Energy.gov (U.S. Department of Energy (DOE))

Best practices, project resources, and other tools on energy efficiency and renewable energy technologies.

215

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

216

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

217

Defect studies in low-temperature-grown GaAs  

SciTech Connect

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

218

Defect studies in low-temperature-grown GaAs  

SciTech Connect

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

219

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network (OSTI)

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

220

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Simulation of quantum dots size and spacing effect for intermediate band solar cell application based on InAs quantum dots arrangement in GaAs  

SciTech Connect

Intermediate band solar cell (IBSC) has become a promising technology in increasing solar cell efficiency. In this work we compare absorption coefficient profile between InAs quantum dots with GaAs bulk. We calculate the efficiency of GaAs bulk and GaAs doped with 2, 5, and 10 nm InAs quantum dot. Effective distances in quantum dot arrangement based on electron tunneling consideration were also calculated. We presented a simple calculation method with low computing power demand. Results showed that arrangement of quantum dot InAs in GaAs can increase solar cell efficiency from 23.9 % initially up to 60.4%. The effective distance between two quantum dots was found 2 nm in order to give adequate distance to prevent electron tunneling and wave functions overlap.

Hendra, P. I. B., E-mail: ib.hendra@gmail.com; Rahayu, F., E-mail: ib.hendra@gmail.com; Darma, Y., E-mail: ib.hendra@gmail.com [Physical Vapor Deposition Laboratory, Physics of Material Electronics Research, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung 40132 (Indonesia)

2014-03-24T23:59:59.000Z

222

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

223

Low Efficiency Droop Green Nano-Pyramid {10 -11} InGaN/GaN Multiple Quantum Well LED  

Science Journals Connector (OSTI)

We report a low efficiency droop 520 nm green nano-pyramid InGaN/GaN multiple quantum well (MQW) LED. MQWs were grown on the semipolar {10 1} nano-pyramid facets. The device physics...

Cheng, Yuh-Jen; Chang, Shih-Pang; Lin, Da-Wei; Kuo, Hao-chung; Xiong, Kang-lin

224

InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting  

Science Journals Connector (OSTI)

Hydrogen generation through water splitting by n-InGaN working electrodes with bias generated from GaAs solar cell was studied. Instead of using an external bias provided by power...

Liu, Shu-Yen; Sheu, J K; Lin, Yu-Chuan; Chen, Yu-Tong; Tu, S J; Lee, M L; Lai, W C

2013-01-01T23:59:59.000Z

225

Reaktive Molekularstrahlepitaxie und Charakterisierung von GaN/(Al,Ga)N-Heterostrukturen auf SiC(0001).  

E-Print Network (OSTI)

??Thema dieser Arbeit ist die Synthese von hexagonalen GaN/(Al,Ga)N-Heterostrukturen mittels reaktiver Molekularstrahlepitaxie (MBE) auf SiC(0001)-Substraten. Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, optischen und (more)

Thamm, Andreas

2001-01-01T23:59:59.000Z

226

Technology Roadmaps  

Energy.gov (U.S. Department of Energy (DOE))

Thispage contains links to DOE's Technology Roadmaps, multi-year plans outlining solid-state lighting goals, research and development initiatives aimed at accelerating technology advances and...

227

Technology Development  

Science Journals Connector (OSTI)

In presenting this chapter on technology development, it must be stated that attempts to make an up-to-date technology survey are restricted, unfortunately, by the proprietary nature of recent advances, detail...

B. E. Conway

1999-01-01T23:59:59.000Z

228

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

229

Determination of porosity of lignocellulosic biomass before and after pretreatment by using Simons⠒ stain and NMR techniques  

NLE Websites -- All DOE Office Websites (Extended Search)

porosity porosity of lignocellulosic biomass before and after pretreatment by using Simons' stain and NMR techniques Xianzhi Meng a , Marcus Foston a,1 , Johannes Leisen b , Jaclyn DeMartini c , Charles E. Wyman c , Arthur J. Ragauskas a,⇑ a BioEnergy Science Center, School of Chemistry and Biochemistry, Institute of Paper Science and Technology, Georgia Institute of Technology, 500 10th Street, Atlanta, GA 30332, USA b School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, GA 30332, USA c Department of Chemical & Environmental Engineering, Center for Environmental Research and Technology, University of California, Riverside, BioEnergy Science Center, Riverside, CA 92507, USA h i g h l i g h t s  Cellulose accessibility was tested by Simons' stain and multiple NMR techniques.  Pretreatment increases the pore size and overall surface area of the

230

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

231

Growth and characterization of M-plane GaN and (In,Ga)N/GaN multiple quantum wells.  

E-Print Network (OSTI)

??Thema dieser Arbeit ist die Synthese von Wurtzit M-plane (In,Ga)N(1-100)-Heterostrukturen auf g-LiAlO2(100) mittels plasmauntersttzter Molekularstrahlepitaxie (MBE). Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, und (more)

Sun, Yue-Jun

2004-01-01T23:59:59.000Z

232

Development of Polarized Electron Source of GaAs-AlGaAs Superlattice and Strained GaAs  

Science Journals Connector (OSTI)

At Nagoya University, we have continued the development of GaAs polarized electron source (PES) for several years. Our test ... a gun producing (15) KeV polarized electrons and a standard 100 KeV Mott polarimete...

T. Nakanishi; S. Nakamura

1991-01-01T23:59:59.000Z

233

Department of Engineering Technology Technology Education  

E-Print Network (OSTI)

Department of Engineering Technology Technology Education A Teacher Education Program New Jersey Institute of Technology #12;WHAT WILL YOU LEARN? Technology teachers teach problem-based learning utilizing math, science and technology principles. Technological studies involve students: · Designing

Bieber, Michael

234

File:USDA-CE-Production-GIFmaps-GA.pdf | Open Energy Information  

Open Energy Info (EERE)

GA.pdf GA.pdf Jump to: navigation, search File File history File usage Georgia Ethanol Plant Locations Size of this preview: 776 × 600 pixels. Full resolution ‎(1,650 × 1,275 pixels, file size: 410 KB, MIME type: application/pdf) Description Georgia Ethanol Plant Locations Sources United States Department of Agriculture Related Technologies Biomass, Biofuels, Ethanol Creation Date 2010-01-19 Extent State Countries United States UN Region Northern America States Georgia External links http://www.nass.usda.gov/Charts_and_Maps/Ethanol_Plants/ File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 16:12, 27 December 2010 Thumbnail for version as of 16:12, 27 December 2010 1,650 × 1,275 (410 KB) MapBot (Talk | contribs) Automated bot upload

235

Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures  

SciTech Connect

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap E{sub g} and the spin orbit splitting energy ?{sub so}, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which ?{sub so},> E{sub g} occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.

Hild, K.; Batool, Z.; Jin, S. R.; Hossain, N.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Hosea, T. JC. [1 Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK and also, Ibnu Sina Institute, Universiti Teknologi Malaysia, Johor Bahru, 81310 (Malaysia); Lu, X. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6, Canada and now VarianSemiconductor Equipment Associates, Gloucester, MA 01930 (United States); Tiedje, T. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6 (Canada)

2013-12-04T23:59:59.000Z

236

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

237

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

238

Multiband GaNAsP Quaternary Alloys  

SciTech Connect

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

239

Implantation of carbon in GaAs  

SciTech Connect

Carbon implanted into GaAs and thermally annealed typically exhibits very low (<3%) electrical activity. It has been demonstrated that the electrical activity of C can be significantly enhanced by co-implantation with Ga. Improved activation may result from either additional damage of the crystal lattice or from stoichiometric changes, forcing the C atoms onto As sites. To determine the relative importance of each of these effects, I have undertaken a systematic study of carbon activation in GaAs. A range of co-implants have been used: group III (B, Ga), group V (N, P, As) and noble gases (Ar, Kr). The damage introduced to the substrate will depend on the mass of the ion implanted. The group III and group V co-implants will affect the crystal stoichiometry. The results indicate that both lattice damage and crystal stoichiometry are important for high electrical activity of C. Increasing the damage will increase the activation due to the increased number of As vacancies but maximum activation can be obtained only by a co-implant which not only damages the lattice but also forces the C to occupy an As site.

Moll, A.J.

1992-03-01T23:59:59.000Z

240

O?[]O? nuclear ?-decay of ?Ga  

E-Print Network (OSTI)

The branching ratio for the ?-Decay of ?Ga to the first excited O? state in ?Zn has been measured. It is possible to use this branching ratio to test the theoretical method of calculating the [] component of the charge correction term [], which...

Hyman, Bruce Carl

2012-06-07T23:59:59.000Z

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16 from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

242

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells  

SciTech Connect

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R. [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qubec (Canada)] [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qubec (Canada); Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K. [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada)] [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Fafard, S. [Cyrium Technologies Inc., Ottawa, ON (Canada)] [Cyrium Technologies Inc., Ottawa, ON (Canada)

2013-09-27T23:59:59.000Z

243

Available Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

6 News Stories (and older) 6 News Stories (and older) 12.21.2005___________________________________________________________________ Genzyme acquires gene therapy technology invented at Berkeley Lab. Read more here. 07.19.2005 _________________________________________________________________ Symyx, a start up company using Berkeley Lab combinatorial chemistry technology licensed by the Technology Transfer Department and developed by Peter Schultz and colleagues in the Materials Sciences Division, will be honored with Frost & Sullivan's 2005 Technology Leadership Award at their Excellence in Emerging Technologies Awards Banquet for developing enabling technologies and methods to aid better, faster and more efficient R&D. Read more here. 07.11.2005 _________________________________________________________________ Nanosys, Inc., a Berkeley Lab startup, is among the solar nanotech companies investors along Sand Hill Road in Menlo Park hope that thinking small will translate into big profits. Read more here.

244

Photovoltaic concentrator technology development project. Sixth project integration meeting  

SciTech Connect

Thirty-three abstracts and short papers are presented which describe the current status of research, development, and demonstration of concentrator solar cell technology. Solar concentrators discussed include the parabolic trough, linear focus Fresnel lens, point focus Fresnel lens, and the parabolic dish. Solar cells studied include silicon, GaAs, and AlGaAs. Research on multiple junction cells, combined photovoltaic/thermal collectors, back contact solar cells, and beam splitter modules is described. Concentrator solar cell demonstration programs are reported. Contractor status summaries are given for 33 US DOE concentrator solar cell contracts; a description of the project, project status, and key results to date is included. (WHK)

None

1980-10-01T23:59:59.000Z

245

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors  

SciTech Connect

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

2013-11-25T23:59:59.000Z

246

Fuel Technologies  

Energy.gov (U.S. Department of Energy (DOE))

Presentation from the U.S. DOE Office of Vehicle Technologies "Mega" Merit Review 2008 on February 25, 2008 in Bethesda, Maryland.

247

Layering Technologies  

Science Journals Connector (OSTI)

Planar technology requires that thin layers of materials be formed and patterned sequentially, commencing with a flat rigid substrate. The key aspects of each layer are its Thi...

Ivor Brodie; Julius J. Muray

1992-01-01T23:59:59.000Z

248

bbb_206.indd  

NLE Websites -- All DOE Office Websites (Extended Search)

Correspondence to: Arthur J Ragauskas, BioEnergy Science Center, School of Chemistry and Biochemistry, Institute for Paper Correspondence to: Arthur J Ragauskas, BioEnergy Science Center, School of Chemistry and Biochemistry, Institute for Paper Science and Technology, Georgia Institute of Technology, Atlanta, GA 30332, USA. E-mail: Arthur.Ragauskas@chemistry.gatech.edu Research sponsor: Department of Energy, Bioenergy Science Center. © 2010 Society of Chemical Industry and John Wiley & Sons, Ltd Review 209 Poplar as a feedstock for biofuels: A review of compositional characteristics Poulomi Sannigrahi, Arthur J. Ragauskas,* Georgia Institute of Technology, Atlanta, GA, USA Gerald A. Tuskan, BioEnergy Science Center, Oak Ridge Laboratory, Oak Ridge ,TN, USA Received October 9, 2009; revised version received December 1, 2009; accepted December 15, 2009 Published online in Wiley InterScience (www.interscience.wiley.com); DOI: 10.1002/bbb.206;

249

Structural changes in switchgrass lignin and hemicelluloses during pretreatments by NMR analysis  

NLE Websites -- All DOE Office Websites (Extended Search)

changes changes in switchgrass lignin and hemicelluloses during pretreatments by NMR analysis Reichel Samuel a, c , Marcus Foston a, c , Nan Jiang a, c , Lenong Allison a, c , Arthur J. Ragauskas a, b, c, * a School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, GA, USA b Institute of Paper Science and Technology, Georgia Institute of Technology, Atlanta, GA, USA c BioEnergy Science Center, USA a r t i c l e i n f o Article history: Received 14 May 2011 Received in revised form 13 August 2011 Accepted 25 August 2011 Available online xxx Keywords: Switchgrass Pretreatment HSQC NMR analysis Lignin a b s t r a c t Switchgrass is currently being developed as a sustainable bio-energy crop due to its broad adaptability, high mass yield and low agricultural input. Its current conversion to biofuels is detrimentally impacted by its native recalcitrance which is typically addressed using

250

c3fb13dd06a8704143923ce0a744bf57  

NLE Websites -- All DOE Office Websites (Extended Search)

HSQC (heteronuclear single quantum coherence) 13 C- 1 H correlation spectra of whole biomass in perdeuterated pyridinium chloride-DMSO system: An effective tool for evaluating pretreatment Reichel Samuel a,c , Marcus Foston a,c , Nan Jaing a,c , Shilin Cao a , Lenong Allison a,c , Michael Studer c , Charles Wyman c , Arthur J. Ragauskas a,b,c,⇑ a School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, GA, United States b Institute of Paper Science and Technology, Georgia Institute of Technology, Atlanta, GA, United States c BioEnergy Science Center, CE-CERT and Chemical and Environmental Engineering Department, Bourns College of Engineering, University of California, Riverside, CA, United States a r t i c l e i n f o Article history: Received 5 May 2010 Received in revised form 12 April 2011 Accepted 18 April 2011 Available online 30 April 2011 Keywords:

251

U.S. Department of Energy Categorical Exclusion Determination Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

34) Georgia Institute of Technology- 34) Georgia Institute of Technology- Electric Power Generation by a Vertical-Axis Turbine Driven by an Anchored Vortex and Sustained by the Air Layer over Solar-Heated Ground Program or Fjeld Office: Advanced Research Projects Agency- Energy (ARPA-E) Location(s) (CitviCounty/State):Atlanta, GA; Austin, TX; Urbana, IL; East Hartford, CT; Golden, CO; Mesa, AZ Proposed Action Description: Funding will support efforts to develop and test a SoVgen, a novel device that generates electricity by converting the potential energy of solar- heated air near the ground to kinetic energy in a columnar vortex. Development-based project tasks and controlled testing will be carried out by Georgia Institute of Technology (Atlanta, GA) and the National Renewable Energy Laboratory (Golden, CO) in dedicated university and industrial

252

Infrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a  

E-Print Network (OSTI)

GaP single QW surrounded by AlGaInP waveguide WG and cladding layers, whereas the NIR laser incorporates a GaInfrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a Robert in GaAs-based broad-area laser diodes. Spectrally and spatially resolved scanning optical microscopy

Peinke, Joachim

253

Intrinsic Nanoscience of ? PuGa Alloys: Local Structure and Speciation, Collective Behavior, Nanoscale Heterogeneity, and Aging Mechanisms  

Science Journals Connector (OSTI)

Materials Science and Technology Division, Theoretical Division, Health, Safety, Radiation Protection Division, and ?Nuclear Materials Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States ... The EXAFS were calculated as the difference between the full spectra and their smooth atomic backgrounds approximated by an arctangent and Gaussian for the edge and a polynomial spline at higher energies, divided by the atomic absorbance fall off with increasing energy. ... That the Ga environment is only minimally or negligibly affected by aging implies that the aging-induced defects, whether isolated or as novel ordered structures, almost exclusively involve Pu sites and are thus concentrated in Ga-depleted domains in the crystal that must therefore reform if they are lost at some point in the aging process. ...

Steven D. Conradson; Nicolas Bock; Julio M. Castro; Dylan R. Conradson; Lawrence E. Cox; Wojciech Dmowski; David E. Dooley; Takeshi Egami; Francisco J. Espinosa-Faller; Franz J. Freibert; Angel J. Garcia-Adeva; Nancy J. Hess; Erik Holmstrm; Rafael C. Howell; Barbara A. Katz; Jason C. Lashley; Raymond J. Martinez; David P. Moore; Luis A. Morales; J. David Olivas; Ramiro A. Pereyra; Michael Ramos; Jeffrey H. Terry; Phillip M. Villella

2014-03-24T23:59:59.000Z

254

Glass Technology  

Science Journals Connector (OSTI)

... WE have received from the Department of Glass Technology, University of Sheffield, a copy of vol. ii. of Experimental Researches ... that department. The papers included have already appeared in the Journal of the Society of Glass Technology. They range over a somewhat wide field of the ...

1920-08-23T23:59:59.000Z

255

NREL: Technology Deployment - Technology Acceleration  

NLE Websites -- All DOE Office Websites (Extended Search)

assistance to federal and private industry to help address market barriers to sustainable energy technologies. Learn more about NREL's work in the following areas:...

256

Vehicle Technologies Office: Vehicle Technologies Office Recognizes  

NLE Websites -- All DOE Office Websites (Extended Search)

Vehicle Technologies Vehicle Technologies Office Recognizes Outstanding Researchers to someone by E-mail Share Vehicle Technologies Office: Vehicle Technologies Office Recognizes Outstanding Researchers on Facebook Tweet about Vehicle Technologies Office: Vehicle Technologies Office Recognizes Outstanding Researchers on Twitter Bookmark Vehicle Technologies Office: Vehicle Technologies Office Recognizes Outstanding Researchers on Google Bookmark Vehicle Technologies Office: Vehicle Technologies Office Recognizes Outstanding Researchers on Delicious Rank Vehicle Technologies Office: Vehicle Technologies Office Recognizes Outstanding Researchers on Digg Find More places to share Vehicle Technologies Office: Vehicle Technologies Office Recognizes Outstanding Researchers on AddThis.com...

257

Vehicle Technologies Office: Graduate Automotive Technology Education  

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Deployment Deployment Site Map Printable Version Share this resource Send a link to Vehicle Technologies Office: Graduate Automotive Technology Education (GATE) to someone by E-mail Share Vehicle Technologies Office: Graduate Automotive Technology Education (GATE) on Facebook Tweet about Vehicle Technologies Office: Graduate Automotive Technology Education (GATE) on Twitter Bookmark Vehicle Technologies Office: Graduate Automotive Technology Education (GATE) on Google Bookmark Vehicle Technologies Office: Graduate Automotive Technology Education (GATE) on Delicious Rank Vehicle Technologies Office: Graduate Automotive Technology Education (GATE) on Digg Find More places to share Vehicle Technologies Office: Graduate Automotive Technology Education (GATE) on AddThis.com...

258

Building Technologies Office: Emerging Technologies Activities  

NLE Websites -- All DOE Office Websites (Extended Search)

Emerging Technologies Emerging Technologies Activities to someone by E-mail Share Building Technologies Office: Emerging Technologies Activities on Facebook Tweet about Building Technologies Office: Emerging Technologies Activities on Twitter Bookmark Building Technologies Office: Emerging Technologies Activities on Google Bookmark Building Technologies Office: Emerging Technologies Activities on Delicious Rank Building Technologies Office: Emerging Technologies Activities on Digg Find More places to share Building Technologies Office: Emerging Technologies Activities on AddThis.com... About Take Action to Save Energy Partner with DOE Activities Appliances Research Building Envelope Research Windows, Skylights, & Doors Research Space Heating & Cooling Research Water Heating Research

259

Solid-State Lighting Issue 15: Selected Business & Technology News  

NLE Websites -- All DOE Office Websites (Extended Search)

9/2002 9/2002 | Table of Contents | Abstracts | Credit and Disclaimer | ISSUE 15: BUSINESS AND TECHNOLOGY NEWS (September - November 2002) A selection of news appears in this section. A. Developer News B. New Products C. Research Results D. Government Activities and Funding News E. Overview Articles Where possible, links to full-text articles and press releases have been included in the abstracts. Click on the links in the table below to go directly to the abstract. Table of Contents: Business and Technology News A. Developer News · Amtech Lighting Services will provide LED traffic signals for City of Dallas, TX. · ATMI received a $9.46 million ONR grant to develop AlGaN/GaN HEMTs on 4-inch GaN and SiC substrates, part of DARPA’s Wide Bandgap Semiconductor Technology Initiative.

260

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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261

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network (OSTI)

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

262

Monolithic integration of GaAs and h~~~~Ga~.~Aslasers by molecular epitaxy on GaAs  

E-Print Network (OSTI)

where the thick cladding layer below the active laser region acts as a buffer layer to-yield comparable epitaxial regrowth of Ino.aGaesAs lasers through dielectric masks between GaAs laser stripes on a GaAs substrate has been used for the -first time- to monolithically integrate these two lasers emitting near 1

263

Kohlenstoffhaltige ternre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternren Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner drften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

264

Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells  

SciTech Connect

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

Hansen, M.; Abare, A.C.; Kozodoy, P.; Katona, T.M.; Craven, M.D.; Speck, J.S.; Mishra, U.K.; Coldren, L.A.; DenBaars, S.P.

2000-07-01T23:59:59.000Z

265

Building Technologies Office: Emerging Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Creating the Next Generation of Energy Efficient Technology Creating the Next Generation of Energy Efficient Technology The Emerging Technologies team partners with national laboratories, industry, and universities to advance research, development, and commercialization of energy efficient and cost effective building technologies. These partnerships help foster American ingenuity to develop cutting-edge technologies that have less than 5 years to market readiness, and contribute to the goal to reduce energy consumption by at least 50%. Sandia Cooler's innovative, compact design combines a fan and a finned metal heat sink into a single element, efficiently transferring heat in microelectronics and reducing energy use. Supporting Innovative Research to Help Reduce Energy Use and Advance Manufacturing Learn More

266

High-Efficiency Non-Polar GaN-Based LEDs  

SciTech Connect

Inlustra Technologies with subcontractor U.C. Santa Barbara conducted a project with the principle goal of demonstrating high internal quantum efficiency blue (430 nm) and green (540nm) light emitting diodes (LEDs) on low-defect density non-polar GaN wafers. Inlustra pursued the fabrication of smooth thick a-plane and m-plane GaN films, as well as defect reduction techniques such as lateral epitaxial overgrowth (LEO) to uniformly lower dislocation density in these films. Limited free-standing wafers were produced as well. By the end of the reporting period, Inlustra had met its milestone of dislocation reduction to < 5 x 10{sup 6} cm{sup -2}. Stacking faults were still present in appreciable density ({approx} 1 x 10{sup 5} cm{sup -1}), but were not the primary focus of defect reduction since there have been no published studies establishing their detrimental effects on LED performance. Inlustra's LEO progress built a solid foundation upon which further commercial development of GaN substrates will occur. UCSB encountered multiple delays in its LED growth and fabrication efforts due to unavoidable facilities outages imposed by ongoing construction in an area adjacent to the metalorganic chemical vapor deposition (MOCVD) laboratory. This, combined with the large amount of ab initio optimization required for the MOCVD system used during the project, resulted in unsatisfactory LED progress. Although numerous blue-green photoluminescence results were obtained, only a few LED structures exhibited electroluminescence at appreciable levels. UCSB also conducting extensive modeling (led by Prof. Van de Walle) on the problem of non-radiative Auger recombination in GaN-based LED structures, which has been posited to contribute to LED efficiency 'droop' at elevated current density. Unlike previous modeling efforts, UCSB's approach was truly a first-principles ab initio methodology. Building on solid numerical foundations, the Auger recombination rates of In{sub x}Ga{sub 1-x}N alloys were calculated from first-principles density-functional and many-body-perturbation theory. The differing mechanisms of inter- and intra-band recombination were found to affect different parts of the emission spectrum. In the blue to green spectral region and at room temperature the Auger coefficient was calculated to be as large as 2 x 10{sup -30} cm{sup 6} s{sup -1}; in the infrared it is even larger. These results indicated that Auger recombination may be responsible for the loss of quantum efficiency that affects InGaN-based light emitters, whether on non-polar or polar crystal planes.

Paul Fini

2010-11-30T23:59:59.000Z

267

First principles approach to the magneto caloric effect: Application to Ni2MnGa  

SciTech Connect

The magneto-caloric effect (MCE) is a possible route to more efficient heating and cooling of residential and commercial buildings. The search for improved materials is important to the development of a viable MCE based heat pump technology. We have calculated the magnetic structure of a candidate MCE material: Ni2MnGa. The density of magnetic states was calculated with the Wang Landau statistical method utilizing energies fit to those of the locally self-consistent multiple scattering method. The relationships between the density of magnetic states and the field induced adiabatic temperature change and the isothermal entropy change are discussed. (C) 2011 American Institute of Physics.

Nicholson, Don M [ORNL; Odbadrakh, Khorgolkhuu [ORNL; Rusanu, Aurelian [ORNL; Eisenbach, Markus [ORNL; Brown, Greg [ORNL; Evans III, Boyd Mccutchen [ORNL

2011-01-01T23:59:59.000Z

268

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

269

Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures  

SciTech Connect

The influence of cladding doping level on the characteristics of laser diodes, which are based on an AlGaInP/GaInP/GaAs system and emit at wavelengths of 670-680 nm, is studied. It is shown experimentally that, as the ratio of the cladding doping levels P/N increases, the inversion current density J{sub 0} and the differential gain {beta} also increase. A monotonic increase in the characteristic temperature T{sub 0} accompanies this process. The internal quantum yield {eta}{sub 0} of stimulated recombination has a maximum at P/N=2.1. Laser diodes with a mesastripe width of 100 {mu}m are manufactured. The cw radiation power emitted by them is as high as 1000 mW at an efficiency of 1.55 W A{sup -1}. (active media. lasers)

Chel'nyi, A A; Aluev, A V; Maslov, S V [M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

2004-01-31T23:59:59.000Z

270

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

271

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

272

Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN  

Science Journals Connector (OSTI)

Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN...

Yu, Chun-Ta; Lai, Wei-Chih; Yen, Cheng-Hsiung; Hsu, Hsu-Cheng; Chang, Shoou-Jinn

2014-01-01T23:59:59.000Z

273

Technology Analysis  

NLE Websites -- All DOE Office Websites (Extended Search)

* Heavy Vehicle Technologies * Heavy Vehicle Technologies * Multi-Path Transportation Futures * Idling Studies * EDrive Vehicle Monthly Sales Transportation Research and Analysis Computing Center Working With Argonne Contact TTRDC Technology Analysis truck Heavy vehicle techologies are one subject of study. Research Reducing Greenhouse Gas Emissions from U.S. Transportation Heavy Vehicle Technologies Multi-Path Transportation Futures Study Idling Studies Light Duty Electric Drive Vehicles Monthly Sales Updates Lithium-Ion Battery Recycling and Life Cycle Analysis Reports Propane Vehicles: Status, Challenges, and Opportunities (pdf; 525 kB) Natural Gas Vehicles: Status, Barriers, and Opportunities (pdf; 696 kB) Regulatory Influences That Will Likely Affect Success of Plug-in Hybrid and Battery Electric Vehicles (pdf; 1.02 MB)

274

Coal Technology  

Science Journals Connector (OSTI)

Several large demonstrations of FBC technology for electrical power generation have proven ... -MW(e) atmospheric pressure circulating fluidized-bed boiler at the ColoradoUte Electric Association's...14 ...

2003-01-01T23:59:59.000Z

275

Surface Science Analysis of GaAs Photocathodes Following Sustained...  

NLE Websites -- All DOE Office Websites (Extended Search)

Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, strained super-lattice GaAs photocathode samples, removed from the CEBAF...

276

P-type doping of GaN  

SciTech Connect

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Wong, R.K.

2000-04-10T23:59:59.000Z

277

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance  

Science Journals Connector (OSTI)

A contacted electroreflectance technique was used to investigate AlGaN/GaN heterostructures and their intrinsic electric field-induced properties. By studying variations in the electroreflectance with applied field spectral features associated with the AlGaN barrier the two-dimensional electron gas at the interface and bulk GaN were identified. Barrier-layer composition and electric field were determined from the AlGaN FranzKeldysh oscillations. For a high mobilityheterostructure grown on SiC measured AlGaN polarizationelectric field and two-dimensional electron gas density approached values predicted by a standard bandstructure model. The two-dimensional electron gas produced a broad field-tunable first derivative electroreflectance feature. With a dielectric function calculation we describe the line shape and relative amplitude of the two-dimensional electron gas electroreflectance feature for a wide range of electron density and applied field values.

S. R. Kurtz; A. A. Allerman; D. D. Koleske; A. G. Baca; R. D. Briggs

2004-01-01T23:59:59.000Z

278

Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 {mu}m  

SciTech Connect

The spectral-kinetic properties of heterostructures with GaAs/GaAsSb-based and GaAsSb/InGaAs/GaAs-based quantum wells, emitting in the range of 1.0-1.2 {mu}m are studied with picosecond and nanosecond temporal resolution. Intense photoluminescence in the GaAsSb/InGaAs/GaAs structure, as well as an increase in the photoluminescence wavelength by a factor of 2.5 and a shift of the location of the maximum of the peak ({approx}100 meV) to the longer-wavelength region were observed up to room temperature. It is established that as the molar fraction of Sb and the thickness of the InGaAs layer increase, the energy of the fundamental transition decreases by a factor of 140 meV compared with the GaAsSb/InGaAs/GaAs structure with a lower Sb content and a smaller thickness of the InGaAs layer. At 300 K, the emission wavelength of such a structure was 1.18 {mu}m. In addition, an increase in the thickness of the InGaAs layer led to an increase in the room-temperature photoluminescence intensity by a factor of 60, which is associated with a decrease in the energy of the fundamental state for electrons in the InGaAs layer and, consequently, to larger electron localization and smaller temperature quenching of photoluminescence.

Morozov, S. V., E-mail: more@ipm.sci.-nnov.ru; Kryzhkov, D. I.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N.; Vikhrova, O. I. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)] [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

2013-11-15T23:59:59.000Z

279

Vacancy-Induced 22 Reconstruction of the Ga(111) Surface of GaAs  

Science Journals Connector (OSTI)

Vacancy formation on the GaAs(111) surface is calculated to be strongly exothermic in character. The creation of one vacancy in each 22 cell allows the remaining Ga surface atoms to have a large inward relaxation, resulting in a 2.3-eV reduction in energy. It also transforms the polar (111) surface into a nonpolar (110)-like surface. The calculations provide strong support for the vacancy model of Tong et al., which is determined from analysis of low-energy-electron-diffraction data.

D. J. Chadi

1984-05-21T23:59:59.000Z

280

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Nel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Observation of photo darkening in self assembled InGaAs/GaAs quantum dots  

SciTech Connect

Photo darkening was observed in epitaxial InGaAs/GaAs quantum dots (QDs). The photoluminescence (PL) intensity of the QDs showed a non-reversible decrease under continuous laser irradiation. The time constants varied from tens of minutes to several hours, depending on the applied laser power. Based on the spectral evolution, it was concluded that the observed phenomenon should originate from laser induced structural damage and a sustained increase of non-radiative recombination rate in the wetting layer. Additionally, according to the PL decay dynamics at different laser powers, it is argued that there should exist other processes that hinder PL degradation at a high laser power.

Zhang Hongyi; Chen Yonghai; Zhou Xiaolong; Jia Yanan; Ye Xiaoling; Xu Bo; Wang Zhanguo [Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2013-05-07T23:59:59.000Z

282

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

283

PAVEMENT TECHNOLOGY UPDATE This Technology Transfer Program  

E-Print Network (OSTI)

PAVEMENT TECHNOLOGY UPDATE This Technology Transfer Program publication is funded by the Division to them in California. TECHNOLOGY TRANSFER PROGRAM MAY 2011, VOL. 3, NO. 1 California's Transition

California at Berkeley, University of

284

Microsoft Word - GT-ORNL - Quarterly Report - Ending 3 2010.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

3-31-2010 3-31-2010 Methane Recovery from Hydrate-bearing Sediments Funding Number: DE-FC26-06NT42963 Submitted By: J. Carlos Santamarina Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0355 Phone: (404)-894.7605 Fax: (404)-894.2278 E-mail: jcs@gatech.edu Costas Tsouris Oak Ridge National Laboratory Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0373 E-mail: costas.tsouris@ce.gatech.edu Acknowledgment: This material is based upon work supported by the Department of Energy under Award Number DE-FC26-06NT42963 Disclaimer: This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes

285

Microsoft Word - GT-ORNL - Quarterly Report - Sep 2010.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

September 2010 September 2010 Methane Recovery from Hydrate-bearing Sediments Funding Number: DE-FC26-06NT42963 Submitted By: J. Carlos Santamarina Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0355 Phone: (404)-894.7605 Fax: (404)-894.2278 E-mail: jcs@gatech.edu Costas Tsouris Oak Ridge National Laboratory Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0373 E-mail: costas.tsouris@ce.gatech.edu Acknowledgment: This material is based upon work supported by the Department of Energy under Award Number DE-FC26-06NT42963 Disclaimer: This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes any

286

Microsoft Word - GT-ORNL - Quarterly Report - Ending 12 2009.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

12-31-2009 12-31-2009 Methane Recovery from Hydrate-bearing Sediments Funding Number: DE-FC26-06NT42963 Submitted By: J. Carlos Santamarina Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0355 Phone: (404)-894.7605 Fax: (404)-894.2278 E-mail: jcs@gatech.edu Costas Tsouris Oak Ridge National Laboratory Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0373 E-mail: costas.tsouris@ce.gatech.edu Acknowledgment: This material is based upon work supported by the Department of Energy under Award Number DE-FC26-06NT42963 Disclaimer: This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees,

287

Microsoft Word - GT-ORNL - Quarterly Report - July 2010.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

July 2010 July 2010 Methane Recovery from Hydrate-bearing Sediments Funding Number: DE-FC26-06NT42963 Submitted By: J. Carlos Santamarina Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0355 Phone: (404)-894.7605 Fax: (404)-894.2278 E-mail: jcs@gatech.edu Costas Tsouris Oak Ridge National Laboratory Georgia Institute of Technology School of Civil and Environmental Engineering Atlanta, GA 30332-0373 E-mail: costas.tsouris@ce.gatech.edu Acknowledgment: "This material is based upon work supported by the Department of Energy under Award Number DE-FC26-06NT42963." Disclaimer: "This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor

288

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

289

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

290

Localized corrosion of GaAs surfaces and formation of porous GaAs  

SciTech Connect

The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

Schmuki, P.; Vitus, C.M.; Isaacs, H.S. [Brookhaven National Lab., Upton, NY (United States); Fraser, J.; Graham, M.J. [National Research Council of Canada, Ottawa, ON (Canada). Inst. for Microstructural Sciences

1995-12-01T23:59:59.000Z

291

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

292

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; zgr, .; Morko, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

293

Technology Transfer  

NLE Websites -- All DOE Office Websites (Extended Search)

Energy Efficiency & Renewable and Energy - Commercialization Energy Efficiency & Renewable and Energy - Commercialization Deployment SBIR/STTR - Small Business Innovation Research and Small Business Technology Transfer USEFUL LINKS Contract Opportunities: FBO.gov FedConnect.net Grant Opportunities DOE Organization Chart Association of University Technology Managers (AUTM) Federal Laboratory Consortium (FLC) Feedback Contact us about Tech Transfer: Mary.McManmon@science.doe.gov Mary McManmon, 202-586-3509 link to Adobe PDF Reader link to Adobe Flash player Licensing Guide and Sample License The Technology Transfer Working Group (TTWG), made up of representatives from each DOE Laboratory and Facility, recently created a Licensing Guide and Sample License [762-KB PDF]. The Guide will serve to provide a general understanding of typical contract terms and provisions to help reduce both

294

Technology Application Centers: Facilitating Technology Transfer  

E-Print Network (OSTI)

transfer plus technology application. A&C Enercom has learned from experience that technology deployment will not occur unless utilities achieve both technology transfer (e.g, the dissemination of information) and technology application (e.g., the direct...

Kuhel, G. J.

295

Sensors and Actuators A 148 (2008) 299305 Contents lists available at ScienceDirect  

E-Print Network (OSTI)

-engine-driven MEMS-based systems are very attractive, and consist of a cm-scale gas-fueled turbine engine [1 of Technology, Atlanta, GA 30332, USA a r t i c l e i n f o Article history: Received 26 March 2008 Received outpacing the power density and energy of the best bat- teries. This has led to the development of small

296

Categorical Exclusion Determination Form Proposed Action Title...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

will take place at Varentec Inc. (San Jose, CA), Georgia Tech University (Atlanta, GA), Electric Power Research Institute (Knoxville, TN), and Waukesha Electric Systems Inc....

297

About the Data in Buildings Performance Database | Department...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

College* Arlington County, VA* Arvada, CO* Atlanta, GA* Beaverton, OR* Boston, MA* Camas School District, WA* Chicago, IL* Clark County, NV* Cleveland, OH* Columbia, MO*...

298

Home Depot Foundation | Open Energy Information  

Open Energy Info (EERE)

Name: Home Depot Foundation Place: Atlanta, GA Website: http:www.homedepotfoundation References: Home Depot Foundation1 Information About Partnership with NREL Partnership...

299

Standard Method of Test for Integrated Heat Pumps  

Energy.gov (U.S. Department of Energy (DOE))

Lead Performer: Oak Ridge National Laboratory - Oak Ridge, TN Partners: -- ASHRAE - Atlanta, GA -- Air Conditioning, Heating, and Refrigeration Institute (AHRI) - Arlington, VA

300

Early Lessons Learned  

NLE Websites -- All DOE Office Websites (Extended Search)

Lessons Learned Deploying a 100Gbps Network Steve Cotter Dept Head, Energy Sciences Network May 4, 2011 Enterprise Innovation Symposium Atlanta, GA Lawrence Berkeley National...

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

NETL F 451.1/1-1, Categorical Exclusion Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Plants Division FY 2013 1012012 - 09302013 Isaac "Andy" Aurelio Atlanta, GA Optimization of Pressurized Oxy-Combustion with Flameless Reactor - Phase I Georgia Tech will...

302

A Survey and Critical Review of the Literature on Indoor Air Quality, Ventilation and Health Symptoms in Schools  

E-Print Network (OSTI)

from the California Healthy Building Study, Phase 1.ASHRAE IAQ 91 Healthy Buildings, Atlanta, GA, ASHRAE, 228-1 of the California Healthy Building Study. Indoor Air, 3:

Daisey, Joan M.

2010-01-01T23:59:59.000Z

303

E-Print Network 3.0 - african-american women participating Sample...  

NLE Websites -- All DOE Office Websites (Extended Search)

Atlanta, GA African Americans in low-income, urban communities are at high... that low income African Americans living ... Source: Duong, Timothy Q. - Yerkes National Primate...

304

E-Print Network 3.0 - aerosol monitoring Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Dodd Way, Atlanta, GA, 30332, U.S.A. Abstract. Atmospheric aerosols scatter and absorb solar Source: Bergin, Mike - Schools of Civil and Environmental Engineering & Earth and...

305

FY 2014 VEHICLES INCUBATOR DE-FOA-0000988 SELECTION TABLE  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

shell non- intercalation cathodes and anodes Atlanta, GA This project will develop a nano- stuctured core to limit particle volume changes and protect the active material from...

306

E-Print Network 3.0 - animal structures Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

1 Evaluating Animations as Student Aids in Learning Computer Algorithms Michael D. Byrne Psychology... Atlanta, GA 30332-0280 Abstract We conducted two experiments designed to...

307

Manufacturing technology  

SciTech Connect

The specific goals of the Manufacturing Technology thrust area are to develop an understanding of fundamental fabrication processes, to construct general purpose process models that will have wide applicability, to document our findings and models in journals, to transfer technology to LLNL programs, industry, and colleagues, and to develop continuing relationships with industrial and academic communities to advance our collective understanding of fabrication processes. Advances in four projects are described here, namely Design of a Precision Saw for Manufacturing, Deposition of Boron Nitride Films via PVD, Manufacturing and Coating by Kinetic Energy Metallization, and Magnet Design and Application.

Blaedel, K.L.

1997-02-01T23:59:59.000Z

308

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network (OSTI)

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

309

The Essentials for GA Water Planning The Relationship  

E-Print Network (OSTI)

Water Plan and the Alabama-Florida-Georgia Water Sharing Dispute (The failure to agree on the two Management F. Conservation & Reuse a. Programs for Water Use Efficiency b. Consumptive Use & Return Flows GThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

310

FEMP/NTDP Technology Focus New Technology  

E-Print Network (OSTI)

FEMP/NTDP Technology Focus New Technology Demonstration Program Technology Focus FEMPFederal Energy Management Program Trends in Energy Management Technology: BCS Integration Technologies ­ Open Communications into a complete EMCIS. The first article [1] covered enabling technologies for emerging energy management systems

311

Structure of a Si(100)22-Ga surface  

Science Journals Connector (OSTI)

The 22 structure formed on a Ga-adsorbed Si(100) surface is determined using tensor low-energy electron diffraction. I-V curves of the parallel dimer model are in excellent agreement with those of the experiment, indicating that the actual surface has parallel dimer structure. Specific displacements of the topmost two surface layers (the protrusion of the Ga dimer toward the vacuum, the increase of the bond length of the Ga dimer, the stretching of the Si dimer, and the movement of the Si dimer toward the Ga dimer) with the elongation of the Si dimer back bond are observed in the optimized geometry. The Ga-Si bond angle measured from the Si(100) surface plane is recovered with these displacements from that of the ideal geometry where each bond length is assumed to be the sum of Pauling covalent radii. Subsurface layers are also deformed to keep the bond lengths near their bulk values.

H. Sakama; K. Murakami; K. Nishikata; A. Kawazu

1994-11-15T23:59:59.000Z

312

Electronic structure of metallic antiperovskite compound GaCMn3  

Science Journals Connector (OSTI)

We have investigated the electronic structures of antiperovskite GaCMn3 and related Mn compounds SnCMn3, ZnCMn3, and ZnNMn3. In the paramagnetic state of GaCMn3, the Fermi surface nesting feature along the ?R direction is observed, which induces the antiferromagnetic (AFM) spin ordering with the nesting vector Q??R. Calculated susceptibilities confirm the nesting scenario for GaCMn3, and also explain various magnetic structures of other antiperovskite compounds. Through the band folding effect, the AFM phase of GaCMn3 is stabilized. Nearly equal densities of states at the Fermi level in the ferromagnetic and AFM phases of GaCMn3 indicate that two phases are competing in the ground state.

J. H. Shim; S. K. Kwon; B. I. Min

2002-07-10T23:59:59.000Z

313

The final technical report of the CRADA, 'Medical Accelerator Technology'  

SciTech Connect

Under this CRADA, Berkeley Lab and the industry partner, General Atomics (GA), have cooperatively developed hadron therapy technologies for commercialization. Specifically, Berkeley Lab and GA jointly developed beam transport systems to bring the extracted protons from the accelerator to the treatment rooms, rotating gantries to aim the treatment beams precisely into patients from any angle, and patient positioners to align the patient accurately relative to the treatment beams. We have also jointly developed a patient treatment delivery system that controls the radiation doses in the patient, and hardware to improve the accelerator performances, including a radio-frequency ion source and its low-energy beam transport (LEBT) system. This project facilitated the commercialization of the DOE-developed technologies in hadron therapy by the private sector in order to improve the quality of life of the nation.

Chu, W.T.; Rawls, J.M.

2000-06-12T23:59:59.000Z

314

(Environmental technology)  

SciTech Connect

The traveler participated in a conference on environmental technology in Paris, sponsored by the US Embassy-Paris, US Environmental Protection Agency (EPA), the French Environmental Ministry, and others. The traveler sat on a panel for environmental aspects of energy technology and made a presentation on the potential contributions of Oak Ridge National Laboratory (ORNL) to a planned French-American Environmental Technologies Institute in Chattanooga, Tennessee, and Evry, France. This institute would provide opportunities for international cooperation on environmental issues and technology transfer related to environmental protection, monitoring, and restoration at US Department of Energy (DOE) facilities. The traveler also attended the Fourth International Conference on Environmental Contamination in Barcelona. Conference topics included environmental chemistry, land disposal of wastes, treatment of toxic wastes, micropollutants, trace organics, artificial radionuclides in the environment, and the use biomonitoring and biosystems for environmental assessment. The traveler presented a paper on The Fate of Radionuclides in Sewage Sludge Applied to Land.'' Those findings corresponded well with results from studies addressing the fate of fallout radionuclides from the Chernobyl nuclear accident. There was an exchange of new information on a number of topics of interest to DOE waste management and environmental restoration needs.

Boston, H.L.

1990-10-12T23:59:59.000Z

315

COMMERCIALIZING TECHNOLOGIES &  

E-Print Network (OSTI)

measurement." Dan Gillings President Applied Technology Associates NMSBA reduced my manufacturing costs by 20 a patent for a revolutionary new, even more shock absorbent mouthguard they will manufacture from material including a new additive. 2 Animated Talking Toys Heilbron Associates had acquired rights to a fiber optic

316

Design of a GaAs/Ge solar array for unmanned aerial vehicles  

SciTech Connect

Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

Scheiman, D.A.; Colozza, A.J. [NYMA Setar Inc., Brookpark, OH (United States); Brinker, D.J.; Bents, D.J. [National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center

1994-12-31T23:59:59.000Z

317

Design of a GaAs/Ge solar array for unmanned aerial vehicles  

SciTech Connect

Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

Scheiman, D.A.; Brinker, D.J.; Bents, D.J.; Colozza, A.J.

1995-03-01T23:59:59.000Z

318

Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers  

Science Journals Connector (OSTI)

In0.135Ga0.865N/GaN pin solar cells are fabricated and investigated with three types of transparent current spreading layers (TCSLs): Ni/Au layer type (Ni/Au-L), Ni/Au grid type (Ni/Au-G), and ITO layer type (I...

X. M. Cai; Y. Wang; Z. D. Li; X. Q. Lv; J. Y. Zhang; L. Y. Ying

2013-05-01T23:59:59.000Z

319

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network (OSTI)

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

320

Surface roughening during depth profiling by Secondary Ion Mass Spectrometry (SIMS) in GaAlAs and GaAs  

Science Journals Connector (OSTI)

During bombardment of Ga1?xAlxAs and GaAs with oxygen we found an abrupt transition to higher sputter rates, change of the useful yield and significant increase of surface roughness at a well defined depth, which...

M. Gericke; T. Lill; M. Trapp; C. -E. Richter

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization  

E-Print Network (OSTI)

radiation hardness than Si, GaAs, CdS and GaN, therefore it should be suitable for space applications. Last novel optoelectronic devices circumventing the problem of p-type doping of ZnO. In such Al devices become reality: the problem of p-type doping of ZnO. So far, there is no way to reliably produce

Wetzel, Christian M.

322

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network (OSTI)

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

323

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network (OSTI)

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm GaN-on-Si...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

324

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network (OSTI)

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

325

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1  

E-Print Network (OSTI)

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1 Jie Lian,2,3 Wei Lu,4 and Lumin Wang1,5,* 1 Department of Materials Science and Engineering, University Arbor, Michigan 48109, USA 3 Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer

Lu, Wei

326

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network (OSTI)

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

327

Vacuum Technology  

SciTech Connect

The environmental condition called vacuum is created any time the pressure of a gas is reduced compared to atmospheric pressure. On earth we typically create a vacuum by connecting a pump capable of moving gas to a relatively leak free vessel. Through operation of the gas pump the number of gas molecules per unit volume is decreased within the vessel. As soon as one creates a vacuum natural forces (in this case entropy) work to restore equilibrium pressure; the practical effect of this is that gas molecules attempt to enter the evacuated space by any means possible. It is useful to think of vacuum in terms of a gas at a pressure below atmospheric pressure. In even the best vacuum vessels ever created there are approximately 3,500,000 molecules of gas per cubic meter of volume remaining inside the vessel. The lowest pressure environment known is in interstellar space where there are approximately four molecules of gas per cubic meter. Researchers are currently developing vacuum technology components (pumps, gauges, valves, etc.) using micro electro mechanical systems (MEMS) technology. Miniature vacuum components and systems will open the possibility for significant savings in energy cost and will open the doors to advances in electronics, manufacturing and semiconductor fabrication. In conclusion, an understanding of the basic principles of vacuum technology as presented in this summary is essential for the successful execution of all projects that involve vacuum technology. Using the principles described above, a practitioner of vacuum technology can design a vacuum system that will achieve the project requirements.

Biltoft, P J

2004-10-15T23:59:59.000Z

328

Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics  

SciTech Connect

In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

2002-10-01T23:59:59.000Z

329

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

330

Magnetic-field effects on quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells  

Science Journals Connector (OSTI)

We have used the variational procedure in the effective-mass and nondegenerate parabolic band approximations in order to investigate the effects of a magnetic field on the exciton effective mass and dispersion in semiconductor heterostructures. Calculations are performed for bulk GaAs, and two-dimensional and quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells for applied magnetic fields perpendicular to the layers. A simple hydrogenlike envelope wave function provides the expected behavior for the exciton dispersion in a wide range of the center-of-mass momenta, and an analytical expression for the exciton effective mass is obtained. Present results lead to a magnetic-field dependent exciton effective mass and dispersion in quite good agreement with available experimental measurements in coupled GaAs?(Ga,Al)As quantum wells.

E. Reyes-Gmez, L. E. Oliveira, and M. de Dios-Leyva

2005-01-14T23:59:59.000Z

331

Atlanta, Georgia: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.7489954°, -84.3879824° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.7489954,"lon":-84.3879824,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

332

Foreign Obligations Implementation Status Presentation  

National Nuclear Security Administration (NNSA)

January 13, 2004 Crowne Plaza Ravinia Atlanta, January 13, 2004 Crowne Plaza Ravinia Atlanta, January 13, 2004 Crowne Plaza Ravinia Atlanta, Georgia Georgia Obligations Accounting Implementation Workshop Obligations Accounting Implementation Workshop Foreign Obligations Implementation Status Brian G. Horn U.S. Nuclear Regulatory Commission January 13, 2004 Obligations Accounting Implementation Workshop January 13, 2 Obligations Accounting Implementation Workshop January 13, 2004 Crowne Plaza Ravinia Atlanta, GA 004 Crowne Plaza Ravinia Atlanta, GA Overview of Meeting Overview of Meeting * Review how the Obligation Tracking System is working * Presentations: - Review of Government notification procedures - Establishment of the beginning Obligation Balances for sites

333

TECHNOLOGY TRANSFER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

404-NOV. 1, 2000 404-NOV. 1, 2000 TECHNOLOGY TRANSFER COMMERCIALIZATION ACT OF 2000 VerDate 11-MAY-2000 04:52 Nov 16, 2000 Jkt 089139 PO 00000 Frm 00001 Fmt 6579 Sfmt 6579 E:\PUBLAW\PUBL404.106 APPS27 PsN: PUBL404 114 STAT. 1742 PUBLIC LAW 106-404-NOV. 1, 2000 Public Law 106-404 106th Congress An Act To improve the ability of Federal agencies to license federally owned inventions. Be it enacted by the Senate and House of Representatives of the United States of America in Congress assembled, SECTION 1. SHORT TITLE. This Act may be cited as the ''Technology Transfer Commer- cialization Act of 2000''. SEC. 2. FINDINGS. The Congress finds that- (1) the importance of linking our unparalleled network of over 700 Federal laboratories and our Nation's universities with United States industry continues to hold great promise

334

Emerging technologies  

SciTech Connect

The mission of the Emerging Technologies thrust area at Lawrence Livermore National Laboratory is to help individuals establish technology areas that have national and commercial impact, and are outside the scope of the existing thrust areas. We continue to encourage innovative ideas that bring quality results to existing programs. We also take as our mission the encouragement of investment in new technology areas that are important to the economic competitiveness of this nation. In fiscal year 1992, we have focused on nine projects, summarized in this report: (1) Tire, Accident, Handling, and Roadway Safety; (2) EXTRANSYT: An Expert System for Advanced Traffic Management; (3) Odin: A High-Power, Underwater, Acoustic Transmitter for Surveillance Applications; (4) Passive Seismic Reservoir Monitoring: Signal Processing Innovations; (5) Paste Extrudable Explosive Aft Charge for Multi-Stage Munitions; (6) A Continuum Model for Reinforced Concrete at High Pressures and Strain Rates: Interim Report; (7) Benchmarking of the Criticality Evaluation Code COG; (8) Fast Algorithm for Large-Scale Consensus DNA Sequence Assembly; and (9) Using Electrical Heating to Enhance the Extraction of Volatile Organic Compounds from Soil.

Lu, Shin-yee

1993-03-01T23:59:59.000Z

335

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

336

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

337

Exciton recombination dynamics in InxGa1-xAs/GaAs quantum wells  

Science Journals Connector (OSTI)

Low-temperature decay times ?PL are reported for a series of InxGa1-xAs/GaAs quantum wells. These show a nearly linear increase with increasing thickness (4?Lz?10 nm, x=0.15) but recombination in the widest well (12 nm) is dominated by nonradiative effects. The decay time increases almost linearly with temperature up to 50 K, as expected for free excitons. An increase in ?PL with increasing In composition (0.05?x?0.25, Lz=8 nm) is also observed. Wells with different In compositions exhibit a similar temperature behavior and there is a weak influence of strain on the decay time. Additional peaks in the photoluminescence spectra occur to the low-energy side of the free-exciton peaks. These features, which exhibit longer decay times, are attributed to excitons localized in In-rich islands arising from indium segregation.

Haiping Yu; Christine Roberts; Ray Murray

1995-07-15T23:59:59.000Z

338

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

339

Building Technologies Office: About Emerging Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Emerging Technologies Emerging Technologies The Emerging Technologies team funds the research and development of cost-effective, energy-efficient building technologies within five years of commercialization. Learn more about the: Key Technologies Benefits Results Key Technologies Specific technologies pursued within the Emerging Technologies team include: Lighting: advanced solid-state lighting systems, including core technology research and development, manufacturing R&D, and market development Heating, ventilation, and air conditioning (HVAC): heat pumps, heat exchangers, and working fluids Building Envelope: highly insulating and dynamic windows, cool roofs, building thermal insulation, façades, daylighting, and fenestration Water Heating: heat pump water heaters and solar water heaters

340

JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 17, NO. 8, AUGUST 1999 1423 HBT Optoelectronic Mixer at Microwave  

E-Print Network (OSTI)

JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 17, NO. 8, AUGUST 1999 1423 HBT Optoelectronic Mixer discussed for both large and small signal regimes. I. INTRODUCTION OPTOELECTRONIC mixing is potentiallyP/GaInAs heterojunction bipolar transistors (HBT's) containing an optical access to the base, as an optoelectronic mixer

Eisenstein, Gadi

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341

SO8 IEEE PHOTONICS TECHNOLOGY LETTERS. VOL. 7 , NO. S. MAY 1995 Monolithic Optoelectronic Circuit Design  

E-Print Network (OSTI)

SO8 IEEE PHOTONICS TECHNOLOGY LETTERS. VOL. 7 , NO. S. MAY 1995 Monolithic Optoelectronic Circuit optoelectronic integration technique was proposed based on this circuit stability and consequently the monolithic integration of LED's and GaAs circuits by molecular beam epitaxial (MBE) growth, to form an optoelectronic

Shenoy, Krishna V.

342

Photovoltaic properties of GaAs:Be nanowire arrays  

SciTech Connect

Arrays of GaAs:Be nanowires are synthesized by molecular beam epitaxy on GaAs(111)B substrates. Prototypes of photovoltaic converters in which the grown nanowire arrays are used as active layers are produced by means of successive photolithography, etching, and metallization processes. Studying the photovoltaic properties of the fabricated structures using a solar radiation simulator demonstrates that the solarenergy conversion efficiency is about 0.1%. The value of the efficiency recalculated with the area occupied by the p-type nanowires on the surface of the n-type GaAs substrate taken into account amounts to 1.1%.

Bouravleuv, A. D.; Beznasyuk, D. V.; Gilstein, E. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Tchernycheva, M.; Luna Bugallo, A. De; Rigutti, L. [University Paris Sud 11, Institut d'Electronique Fondamentale UMR CNRS 8622 (France); Yu, L. [CNRS, Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), Ecole Polytechnique (France); Proskuryakov, Yu. [University of Liverpool, Stephenson Institute for Renewable Energy (United Kingdom); Shtrom, I. V.; Timofeeva, M. A. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Samsonenko, Yu. B.; Khrebtov, A. I.; Cirlin, G. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-06-15T23:59:59.000Z

343

Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires  

SciTech Connect

Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

Kim, D. C.; Ahtapodov, L.; Boe, A. B.; Moses, A. F.; Dheeraj, D. L.; Fimland, B. O.; Weman, H. [Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway); Choi, J. W.; Ji, H.; Kim, G. T. [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2011-12-23T23:59:59.000Z

344

Effects of Ga ion-beam irradiation on monolayer graphene  

SciTech Connect

The effects of Ga ion on the single layer graphene (SLG) have been studied by Raman spectroscopy (RS), SEM, and field-effect characterization. Under vacuum conditions, Ga ion-irradiation can induce disorders and cause red shift of 2D band of RS, rather than lattice damage in high quality SLG. The compressive strain induced by Ga ion decreases the crystalline size in SLG, which is responsible for the variation of Raman scattering and electrical properties. Nonlinear out-put characteristic and resistance increased are also found in the I-V measurement. The results have important implications during CVD graphene characterization and related device fabrication.

Wang, Quan; Mao, Wei; Zhang, Yanmin; Shao, Ying; Ren, Naifei [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)] [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China) [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-08-12T23:59:59.000Z

345

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Meso-Machining Meso-Machining PDF format (182 kb) Sandia's Micro-Electro Discharge Machine (Micro-EDM) (above). On the upper right inset is the Micro-EDM electode in copper that was made with the LIGA (electroforming) process. On the lower right inset is a screen fabricated into .006 inch kovar sheet using the Micro-EDM electrode. The walls of the screen are .002 inch wide by .006 inch deep. Meso-machining technologies being developed at Sandia National Laboratories will help manufacturers improve a variety of production processes, tools, and components. Meso-machining will benefit the aerospace, automotive, biomedical, and defense industries by creating feature sizes from the 1 to 50 micron range. Sandia's Manufacturing Science and Technology Center is developing the

346

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

LTCC multi-chip module LTCC multi-chip module A high density LTCC multi-chip module Electronic Packaging PDF format (150 kb) The Electronic Packaging technologies in the Thin Film, Vacuum, & Packaging Department are a resource for all aspects of microelectronic packaging. From design and layout to fabrication of prototype samples, the staff offers partners the opportunity for concurrent engineering and development of a variety of electronic packaging concepts. This includes assistance in selecting the most appropriate technology for manufacturing, analysis of performance characteristics and development of new and unique processes. Capabilities: Network Fabrication Low Temperature Co-Fired Ceramic (LTCC) Thick Film Thin Film Packaging and Assembly Chip Level Packaging MEMs Packaging

347

A rapid analytical pyrolysis method - Alfalfa (Medicago sativa)  

NLE Websites -- All DOE Office Websites (Extended Search)

Increase in 4-coumaryl alcohol (H) units during lignification in Increase in 4-coumaryl alcohol (H) units during lignification in alfalfa (Medicago sativa) alters extractability and molecular weight of lignin Angela Ziebell 1,2 , Kristen Gracom ,1,2 , Rui Katahira 1 , Fang Chen 3,4 , Yunqiao Pu 5,6 , Art Ragauskas 5,6 , Richard A. Dixon 3,4 and Mark Davis 1,2 1-National Bioenergy Center, National Renewable Energy Laboratory, Golden, CO 80401-3393; 2-Bioenergy Science Center, National Renewable Energy Laboratory, 1617 Golden, CO 80401-3393; 3-Samuel Roberts Noble Foundation, Ardmore, OK 73401; 4-Bioenergy Science Center, Ardmore, OK 73401; 5-Institute of Paper Science and Technology at Georgia Tech., Atlanta, GA 30318; 6-Bioenergy Science Center, Georgia Tech., Atlanta, GA 30318 Running head: Increase in coumaryl alcohol units alters lignin molecular weight

348

U  

NLE Websites -- All DOE Office Websites (Extended Search)

Katherine (nee Hornbostel) Ong. Ms. Ong grew up in Atlanta, GA Katherine (nee Hornbostel) Ong. Ms. Ong grew up in Atlanta, GA and is a senior mechanical engineering major at Georgia Institute of Technology. Under the Hybrid Performance Project, Ms. Ong explored the reaction kinetics of internal reforming for a solid oxide fuel cell. Specifically, the project tested fuel stream kinetic models in order to determine whether methane fuel could cause freezing damage to the solid oxide fuel cells. The U.S. Department of Energy, Office of Fossil Energy (FE) offers the MELF internships. The 10 week fellowship provides interns with a unique opportunity to gain hands-on experience on real energy-related projects. Qualified students are provided with an insider's view to the Federal government, with the aim of encouraging them to consider future employment with FE. By

349

Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs  

Science Journals Connector (OSTI)

Electrolyte electroreflectance (EER) experiments were performed on In 0.22 Ga 0.78 As/GaAs single quantum wells grown by the conventional molecular-beam-epitaxy (MBE) shutter operation and also by modified MBE shutter operation intended to form more compositionally abrupt normal and inverted interfaces. The latter included controlled thermal desorption of the surface segregated In at the InGaAs layer surface (flash off) and the deposition of In at the InGaAs/GaAs interface to eliminate compositional broadening (predeposition). The fundamental energy gap and subband transitions were determined experimentally and compared with an accurate calculation of the potential well problem including strain. These results confirmed the segregation of In atoms near the interface. The segregation was maximum in the conventional (normal) MBE sample and least with the modified growth incorporating predeposition and flash off as expected. The segregated atoms are observed to act as dopants and form junctions near the InGaAs/GaAs interface. This study shows that EER can be used as an effective tool for studying the segregation process in MBE growth.

K. Chattopadhyay; J. Aubel; S. Sundaram; J. E. Ehret; R. Kaspi; Keith R. Evans

1997-01-01T23:59:59.000Z

350

TECHNOLOGY LICENSE APPLICATION Office of Technology Transfer  

E-Print Network (OSTI)

Page 1 TECHNOLOGY LICENSE APPLICATION Office of Technology Transfer UT-Battelle, LLC (UT. One of the functions of UT-BATTELLE's Office of Technology Transfer is to negotiate license agreements

Pennycook, Steve

351

The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency  

Science Journals Connector (OSTI)

This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) ... quantum dot effectively enhance the overall power conversion efficiency

Chen-Chen Chung; Binh Tinh Tran; Hau-Vei Han; Yen-Teng Ho

2014-03-01T23:59:59.000Z

352

Improvement of orange ii photobleaching by moderate Ga3+ doping of titania and detrimental effect of structural disorder on Ga overloading  

Science Journals Connector (OSTI)

Highly photoactive Ga3+-doped anatase modification of titania was prepared by homogeneous hydrolysis of aqueous solutions mixture of titanium oxo-sulphate TiOSO4 and gallium(III) nitrate with urea. Incorporation of Ga3+ ...

Vclav tengl, Jil Henych, Michaela Slun, Tom Matys Grygar, Jana Velick, Martin Kormunda

2014-01-01T23:59:59.000Z

353

Kinetics of indirect photoluminescence in GaAs/AlxGa1?x As double quantum wells in a random potential with a large amplitude  

Science Journals Connector (OSTI)

The kinetics of indirect photoluminescence of GaAs/AlxGa1?x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is ...

L. V. Butov; A. V. Mintsev; A. I. Filin

1999-05-01T23:59:59.000Z

354

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

355

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

356

Hydrogen Technologies Group  

SciTech Connect

The Hydrogen Technologies Group at the National Renewable Energy Laboratory advances the Hydrogen Technologies and Systems Center's mission by researching a variety of hydrogen technologies.

Not Available

2008-03-01T23:59:59.000Z

357

Information Technology and Libraries  

E-Print Network (OSTI)

Sue Chesley Perry 196 INFORMATION TECHNOLOGY AND LIBRARIES |LITA - Library & Information Technology Association). Two of the 190 INFORMATION TECHNOLOGY AND LIBRARIES |

Hubble, Ann; Murphy, Deborah A.; Perry, Susan Chesley

2011-01-01T23:59:59.000Z

358

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy  

Science Journals Connector (OSTI)

Time-resolved photoluminescence(TRPL) and positron annihilation measurements as well as Al0.23Ga0.77N/GaN heterostructuregrowth by metalorganic vapor phase epitaxy were carried out on very low defect density polar c-plane and nonpolar m-plane freestanding GaN (FS-GaN) substrates grown by hydride vapor phase epitaxy. Room-temperature photoluminescence(PL) lifetime for the near-band-edge (NBE) excitonic emission of the FS-GaN substrates increases with increasing positron diffusion length (L +); i.e. decreasing gross concentration of charged and neutral point defects and complexes. The best undoped c-plane FS-GaN exhibits record-long L + being 116?nm. The fast component of the PL lifetime for its NBE emission increases with temperature rise up to 100?K and levels off at approximately 1.1?ns. The result implies a saturation in thermal activation of nonradiative recombination centers. The surface and interface roughnesses for a Si-doped Al0.23Ga0.77N/GaN/Al0.18Ga0.82N/GaN heterostructure are improved by the use of FS-GaN substrates in comparison with the structure fabricated on a standard GaN template. The emission signals related to the recombination of a two-dimensional electron gas and excited holes are recognized for an Al0.23Ga0.77N/GaN single heterostructuregrown on the c-plane FS-GaN substrate.

S. F. Chichibu; K. Hazu; Y. Ishikawa; M. Tashiro; H. Namita; S. Nagao; K. Fujito; A. Uedono

2012-01-01T23:59:59.000Z

359

Technology Transfer: Success Stories: Licensed Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Licensed Technologies Licensed Technologies Here are some of our licensees and the technologies they are commercializing; see our Start-Up Company page for more of our technology licenses. Company (Licensee) Technology Life Technologies Corp. Cell lines for breast cancer research Bristol Myers Squibb; Novartis; Plexxikon Inc.; Wyeth Research; GlaxoSmithKline; Johnson & Johnson; Boehringer Ingelheim Pharmaceuticals, Inc.; Genzyme Software for automated macromolecular crystallography Shell International Exploration and Production; ConnocoPhillips Company; StatOil ASA; Schlumburger Technology Corportation; BHP Billiton Ltd.; Chevron Energy Technology Company; EniTecnologie S.p.A. Geo-Hydrophysical modeling software Microsoft Home Energy Saver software distribution Kalinex Colorimetric bioassay

360

Vehicle Technologies Office: 2008 Advanced Vehicle Technology...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

8 Advanced Vehicle Technology Analysis and Evaluation Activities and Heavy Vehicle Systems Optimization Program Annual Progress Report Vehicle Technologies Office: 2008 Advanced...

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
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361

Vehicle Technologies Office: 2009 Advanced Vehicle Technology...  

Office of Environmental Management (EM)

Vehicle Technologies Office: 2009 Advanced Vehicle Technology Analysis and Evaluation Activities and Heavy Vehicle Systems Optimization Program Annual Progress Report Vehicle...

362

Polarization charges and polarization-induced barriers in AlxGa1xNGaN and InyGa1yNGaN heterostructures  

E-Print Network (OSTI)

N?GaN heterostructures L. Jia,a) E. T. Yu, D. Keogh, and P. M. Asbeck Department of Electrical and Computer EngineeringGa1 yN surrounded by n-GaN, capacitance­ voltage profiling studies combined with elementary will most likely require further improvements in p-type GaN conduc- tivity and fabrication of low-resistance

Yu, Edward T.

363

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

364

Lattice vibrations of pure and doped GaSe  

SciTech Connect

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

365

GaAs solar cells close to the thermodynamic limit  

Science Journals Connector (OSTI)

The efficiency of GaAs solar cells can be increased by applying angularly selective filters. It is shown in terms of detailed balance model, why this happens and the concept is proven...

Hoehn, Oliver; Kraus, Tobias; Bauhuis, Gerard; Schwarz, Ulrich T; Blsi, Benedikt

366

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network (OSTI)

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

367

Modeling of InGaN/Si tandem solar cells  

Science Journals Connector (OSTI)

We investigate theoretically the characteristics of monolithic InGaN/Si two-junction series-connected solar cells using the air mass 1.5 global irradiance spectrum. The addition of an InGaN junction is found to produce significant increases in the energy conversion efficiency of the solar cell over that of one-junction Si cells. Even when Si is not of high quality such two-junction cells could achieve efficiencies high enough to be practically feasible. We also show that further though smaller improvements of the efficiency can be achieved by adding another junction to form an InGaN/InGaN/Si three-junction cell.

L. Hsu; W. Walukiewicz

2008-01-01T23:59:59.000Z

368

Exciton front propagation in photoexcited GaAs quantum wells  

E-Print Network (OSTI)

We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton ...

Yang, Sen

369

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents (OSTI)

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

370

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy  

SciTech Connect

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by either Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 10{sup ?5} cm{sup ?1}, and the length of SFs is less than 15 nm.

Shao, Jiayi; Malis, Oana [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Zakharov, Dmitri N. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)] [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Edmunds, Colin [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)] [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 49707 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 49707 (United States)

2013-12-02T23:59:59.000Z

371

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy  

Science Journals Connector (OSTI)

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular- ... (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as ... back surface field la...

Shulong Lu; Lian Ji; Wei He; Pan Dai; Hui Yang

2011-10-01T23:59:59.000Z

372

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

373

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network (OSTI)

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

374

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network (OSTI)

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

375

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Films Thin Films PDF format (189 kb) Multi Layer Thin Films Multi Layer Thin Films Planetary Sputtering SystemsPlanetary Sputtering Systems Planetary Sputtering Systems The Thin Film laboratory within Manufacturing Science & Technology provides a variety of vapor deposition processes and facilities for cooperative research and development. Available capabilities include electron beam evaporation, sputter deposition, reactive deposition processes, atomic layer deposition (ALD) and specialized techniques such as focused ion beam induced chemical vapor deposition. Equipment can be reconfigured for prototyping or it can be dedicated to long-term research, development and manufacturing. Most sputter and evaporative deposition systems are capable of depositing multiple materials.

376

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Molding, Thermoforming & Compounding Molding, Thermoforming & Compounding PDF format (89 kb) The Manufacturing Science & Technology Center helps customers choose the best materials and techniques for their product by providing a variety of conformal coatings, thermoforming, and compounding materials using established or custom designed processes. The department provides consulting services for injection molding and rubber compounding projects. Capabilities: Thermoforming: Processing thermoplastics such as polycarbonate, polymethyl methacrylate, polypropylene polystyrene, and ABS; producing holding trays, protective caps, and custom covers Injection Molding Consultation: Designing your part to be injection molded, helping you choose the best material for your application, and supporting your interface with injection molding companies

377

Free-running InGaAs/InP Avalanche Photodiode with Active Quenching for Single Photon Counting at Telecom Wavelengths  

E-Print Network (OSTI)

We present an InGaAs/InP avalanche photodiode with an active quenching circuit on an ASIC (application specific integrated circuit) that is capable of operating in both gated and free-running modes. The 1.6mm2 ASIC chip is fabricated using CMOS (complementary metal oxide semiconductor) technology guaranteeing long-term stability, reliability and compactness. In the free-running mode we find a single photon detection efficiency of 10% with <2kHz of noise.

R. T. Thew; D. Stucki; J-D. Gautier; A. Rochas; H. Zbinden

2008-01-25T23:59:59.000Z

378

Technology Name  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Development Development DE-EM0000598 D&D KM-IT For the deployment of Information Technology for D&D knowledge management Page 1 of 2 Florida International University Florida D&D Knowledge Management Information Tool Challenge Deactivation and decommissioning (D&D) work is a high priority across the DOE Complex. The D&D community associated with the various DOE sites has gained extensive knowledge and experience over the years. To prevent the D&D knowledge and expertise from being lost over time an approach is needed to capture and maintain this valuable information in a universally available and easily usable system. Technical Solution The D&D KM-IT serves as a centralized repository

379

CSIR TECHNOLOGY AWARDS -2013  

E-Print Network (OSTI)

CSIR TECHNOLOGY AWARDS - 2013 GUIDELINES & PROFORMAE FOR NOMINATIONS Planning and Performance 2013 #12;CSIR TECHNOLOGY AWARDS BRIEF DETAILS ,,CSIR Technology Awards were instituted in 1990 to encourage multi-disciplinary in- house team efforts and external interaction for technology development

Jayaram, Bhyravabotla

380

Lab Visits on DOE Technology Roadmap and the Technology Advisory...  

Office of Environmental Management (EM)

DOE Technology Roadmap and the Technology Advisory Board OCIO Technology Summit: High Performance Computing Lab Visits on DOE Technology Roadmap and the Technology Advisory Board...

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

INL Technology Transfer  

NLE Websites -- All DOE Office Websites (Extended Search)

Technology Transfer Through collaboration with industry partners, INL's Technology Deployment office makes available to American agencies and international organizations unique...

382

Energy Technology Solutions  

Energy.gov (U.S. Department of Energy (DOE))

Public-private partnerships transforming industry and list of commercialized technologies, knowledge-based results, and promising technologies

383

California Institute of Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

California Institute of Technology o Ivan Celanovic, Principal Research Scientist, Massachusetts Institute of Technology o Geoffrey Kinsey, Director, Photovoltaic...

384

Technology Validation Fact Sheet  

Energy.gov (U.S. Department of Energy (DOE))

Fact sheet produced by the Fuel Cell Technologies Office describing hydrogen and fuel cell technology validation efforts.

385

EM Reviews Budget, Technology Challenges with Advisory Board | Department  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Reviews Budget, Technology Challenges with Advisory Board Reviews Budget, Technology Challenges with Advisory Board EM Reviews Budget, Technology Challenges with Advisory Board June 21, 2013 - 12:00pm Addthis Associate Principal Deputy Assistant Secretary Alice Williams, left, and EM Senior Advisor Dave Huizenga, center, talk with Environmental Management Advisory Board Vice-Chair Dennis Ferrigno at the recent board meeting. Associate Principal Deputy Assistant Secretary Alice Williams, left, and EM Senior Advisor Dave Huizenga, center, talk with Environmental Management Advisory Board Vice-Chair Dennis Ferrigno at the recent board meeting. AUGUSTA, Ga. - EM leadership met with the Environmental Management Advisory Board (EMAB) recently to discuss a range of topics, from EM's fiscal year 2014 budget request to its technology challenges.

386

NETL: Clean Coal Technology Demonstration Program (CCTDP) - Round 2  

NLE Websites -- All DOE Office Websites (Extended Search)

2 2 Environmental Control Technologies - SO2 Control Technologies Demonstration of Innovative Applications of Technology for the CT-121 FGD Process - Project Brief [PDF-265KB] Southern Company Services, Newnan, GA PROGRAM PUBLICATIONS Final Reports Demonstration of Innovative Applications of Technology for the CT-121 FGD Process, Final Report (Jan 1997) Volume 1, Executive Summary [PDF-4.6MB] Volume 2, Operation [PDF-32.8MB] Volume 2 Appendices [PDF-6.3MB] Volume 3, Equipment Vol 3a, Materials and Maintenance [PDF-34.6MB] Vol 3b, Instrumentation and Control [PDF-1.2MB] Vol 3c, Materials Test & Evaluation Program [PDF-28.2MB] Volume 4, Gypsum Stacking &Byproduct Evaluation [PDF-11.3MB] Volume 5, Environmental Monitoring Plan [PDF-3MB] Volume 5 Appendices [PDF-5.8MB]

387

Electronic properties of the Ga vacancy in GaP(110) surfaces determined by scanning tunneling microscopy  

Science Journals Connector (OSTI)

The electronic properties of uncharged Ga monovacancies in GaP(110) surfaces are determined from voltage-dependent scanning tunneling microscopy images. The signatures of localized defect states in the band gap are analyzed and their spatial location is determined. Empty and occupied defect states exist. Depressed dangling bonds in the occupied-state images indicate an inward relaxation of the neighboring P atoms. The results agree with recent theoretical work.

Ph. Ebert and K. Urban

1998-07-15T23:59:59.000Z

388

PAVEMENT TECHNOLOGY UPDATE This Technology Transfer Program  

E-Print Network (OSTI)

PAVEMENT TECHNOLOGY UPDATE This Technology Transfer Program publication is funded by the Division of asphalt pavements. TECHNOLOGY TRANSFER PROGRAM JULY 2010, VOL. 2, NO. 1 Warm Mix Asphalt Hits the Road, and California LTAP Field Engineer, Technology Transfer Program, Institute of Transportation Studies, UC Berkeley

California at Berkeley, University of

389

PAVEMENT TECHNOLOGY UPDATE This Technology Transfer Program  

E-Print Network (OSTI)

PAVEMENT TECHNOLOGY UPDATE This Technology Transfer Program publication is funded by the Division solve the very serious problem of waste tire disposal. TECHNOLOGY TRANSFER PROGRAM SEPTEMBER 2009, VOL, University of California Pavement Research Center, and California LTAP Field Engineer, Technology Transfer

California at Berkeley, University of

390

Venus Technology Plan Venus Technology Plan  

E-Print Network (OSTI)

Venus Technology Plan May 2014 #12; ii Venus Technology Plan At the Venus Exploration a Roadmap for Venus Exploration (RVE) that is consistent with VEXAG priorities as well as Planetary Decadal Survey priorities, and (3) develop a Technology Plan for future Venus missions (after a Technology

Rathbun, Julie A.

391

NREL: Technology Transfer - Technology Partnership Agreements  

NLE Websites -- All DOE Office Websites (Extended Search)

Technology Partnership Agreements Technology Partnership Agreements Through technology partnership agreements, NREL provides partners with technical support to help commercialize and deploy energy technologies and products. We do not fund any projects under a technology partnership agreement. The partner provides the necessary resources and covers our costs of providing technical services. NREL does provide funding opportunities through competitively placed contracts. For more information, see our business opportunities. Process The technology partnership agreement process basically includes 11 steps. See the NREL Technology Partnership Agreement Process flowchart. We are committed to working through these steps in a timely manner. Experience suggests that the fastest means to reach an agreement is through

392

Microscopic identification of the compensation mechanisms in Si-doped GaAs  

Science Journals Connector (OSTI)

The compensation mechanisms of SiGa donors in GaAs are determined by scanning tunneling microscopy. With increasing Si concentration the SiGa donors are consecutively electrically deactivated by SiAs acceptors, Si clusters, and SiGa-Ga-vacancy complexes. A microscopic model based on the screened Coulomb interaction between charged dopants, the amphoteric nature of Si, and the Fermi-level effect is proposed. It explains the observed defects, the critical Si concentrations of each identified mechanism, and predicts the solubility limit of Si in GaAs. 1996 The American Physical Society.

C. Domke, Ph. Ebert, M. Heinrich, and K. Urban

1996-10-15T23:59:59.000Z

393

Bottom-up Representation of Industrial Energy Efficiency Technologies in Integrated Assessment Models for the U.S. Pulp and Paper Sector  

E-Print Network (OSTI)

Production Experience with LWC. TAPPI Papermakers ConferenceProceedings, 1995. TAPPI, Atlanta, Georgia. Cannell, E.for mini Mill Applications. TAPPI Papermakers Conference

Xu, Tengfang

2014-01-01T23:59:59.000Z

394

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network (OSTI)

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

395

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Sol-Gel Glasses Sol-Gel Glasses PDF format (74 kb) Sol Gel Sol Gel Coating with Sol-Gel Glasses Coating with Sol-Gel Glasses The Manufacturing Science & Technology Center conducts process development and scale-up of ceramic and glass materials prepared by the sol-gel process. Sol-gel processing uses solutions prepared at low temperature rather than high temperature powder processing to make materials with controlled properties. A precursor sol-gel solution (sol) is either poured into a mold and allowed to gel or is diluted and applied to a substrate by spinning, dipping, spraying, electrophoresis, inkjet printing or roll coating. Controlled drying of the wet gel results in either a ceramic or glass bulk part or a thin film on a glass, plastic, ceramic or metal substrate.

396

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Ion Beam Manufacture Ion Beam Manufacture PDF format (113 kb) Example sine wave FIB sputtered into initially planar Si substrate Example sine wave FIB sputtered into initially planar Si substrate Sandia Manufacturing Science & Technology's Focused Ion Beam (FIB) laboratory provides an opportunity for research, development and prototyping. Currently, our scientists are developing methods for ion beam sculpting microscale tools, components and devices. This includes shaping of specialty tools such as end-mills, turning tools and indenters. Many of these have been used in ultra-precision machining DOE applications. Additionally, staff are developing the capability to ion mill geometrically-complex features and substrates. This includes the ability to sputter predetermined curved shapes of various symmetries and

397

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

3 foot diameter cyanate ester / fiberglass laminated antenna 3 foot diameter cyanate ester / fiberglass laminated antenna 3 foot diameter cyanate ester / fiberglass laminated antenna Composites PDF format (145 kb) Polymer composite materials are composed of fibers in an organic matrix and can be useful in applications that require a high strength-to-weight ratio. Sandia's MS&T staff will work with you from part design, through mold and tooling design, and on through fabrication. The department is capable of fabricating small and large complex parts and will help you choose the most economical technique for your composite needs. Capabilities: The Center has a comprehensive program on the mechanical engineering design, tooling and fixturing, lay-out, complete processing of the composite structure, and technology transfer of composite structures for a

398

Manufacturing Science and Technology: Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

Laser Engineered Net Shaping(tm) Laser Engineered Net Shaping(tm) PDF format (140 kb) picture of processing blade Processing Blade Sandia National Laboratories has developed a new technology to fabricate three-dimensional metallic components directly from CAD solid models. This process, called Laser Engineered Net ShapingT (LENS®), exhibits enormous potential to revolutionize the way in which metal parts, such as complex prototypes, tooling, and small-lot production items, are produced. The process fabricates metal parts directly from the Computer Aided Design (CAD) solid models using a metal powder injected into a molten pool created by a focused, high-powered laser beam. Simultaneously, the substrate on which the deposition is occurring is scanned under the beam/powder interaction zone to fabricate the desired

399

Advances in InGaAs/InP single-photon detector systems for quantum communication  

E-Print Network (OSTI)

Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III-V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size, low cost and easy operation. In the past decade, the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques. This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes. Future perspectives of both the devices and quenching techniques are summarized.

Zhang, Jun; Zbinden, Hugo; Pan, Jian-Wei

2015-01-01T23:59:59.000Z

400

Tailoring broadband light trapping of GaAs and Si substrates by self-organised nanopatterning  

SciTech Connect

We report on the formation of high aspect ratio anisotropic nanopatterns on crystalline GaAs (100) and Si (100) substrates exploiting defocused Ion Beam Sputtering assisted by a sacrificial self-organised Au stencil mask. The tailored optical properties of the substrates are characterised in terms of total reflectivity and haze by means of integrating sphere measurements as a function of the morphological modification at increasing ion fluence. Refractive index grading from sub-wavelength surface features induces polarisation dependent anti-reflection behaviour in the visible-near infrared (VIS-NIR) range, while light scattering at off-specular angles from larger structures leads to very high values of the haze functions in reflection. The results, obtained for an important class of technologically relevant materials, are appealing in view of photovoltaic and photonic applications aiming at photon harvesting in ultrathin crystalline solar cells.

Martella, C.; Chiappe, D.; Mennucci, C.; Buatier de Mongeot, F. [Dipartimento di Fisica, Universit di Genova, via Dodecaneso 33, I-16146 Genova (Italy)

2014-05-21T23:59:59.000Z

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

A review of methods to match building energy simulation modelsto measured data  

E-Print Network (OSTI)

Younger W. Handbook of energy audits. 7th ed.. Lilburn, GA:for commercial building energy audits. 2nd ed. Atlanta, GA:B. Investment grade energy audit. In: Proceedings of the

Coakley, Daniel; Raftery, Paul; Keane, Marcus

2014-01-01T23:59:59.000Z

402

2196 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 53, NO. 6, JUNE 2005 Layout-Level Synthesis of RF Inductors and Filters  

E-Print Network (OSTI)

is with Jacket Micro Devices Inc., Atlanta, GA, 30308 USA. M. Swaminathan is with the Department of Electrical Devices Inc., Atlanta, GA, 30308 USA. Digital Object Identifier 10.1109/TMTT.2005.848782 factor and stripline configuration are within 5% of data obtained from electromagnetic (EM) simulations. For RF

Swaminathan, Madhavan

403

Building Technologies Office: Better Buildings Challenge  

NLE Websites -- All DOE Office Websites (Extended Search)

Challenge Challenge Photo of the Atlanta skyline on a sunny day, including the gold dome of the state capitol. The City of Atlanta has committed 16 million square feet of public and private space to substantive upgrades as part of the Better Buildings Challenge. Credit: iStockphoto The Better Buildings Challenge is part of the U.S. Department of Energy's (DOE's) Better Buildings Initiative, which aims to make U.S. commercial and industrial buildings at least 20% more efficient during the next decade. To achieve this aggressive target, DOE is working with public and private sector partners that commit to being leaders in energy efficiency. These partners will implement energy savings practices that improve energy efficiency and save money, and will showcase effective strategies and the results of their efforts.

404

Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer  

SciTech Connect

Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup ?2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H. [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan); Kachi, T. [Toyota Central R and D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Sugimoto, M. [Toyota Motor Corporation, 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309 (Japan)

2013-12-04T23:59:59.000Z

405

Growth of Core?Shell Ga?GaN Nanostructures via a Conventional Reflux Method and the Formation of Hollow GaN Spheres  

Science Journals Connector (OSTI)

Gallium nitride (GaN) is an important III?V semiconductor with a wide direct band gap of ?3.4 eV. ... LiHMDS exhibits good solubility in TOA. ... The products were collected by centrifugation twice at 7000 rpm for 2 min in hexane, isopropanol, ethanol, and then deionized water. ...

Tz-Jun Kuo; Chi-Liang Kuo; Chun-Hong Kuo; Michael H. Huang

2009-02-05T23:59:59.000Z

406

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

407

Metal contacts on ZnSe and GaN  

SciTech Connect

Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

Duxstad, K.J. [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering; [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

1997-05-01T23:59:59.000Z

408

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network (OSTI)

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

409

Site-controlled fabrication of Ga nanodroplets by focused ion beam  

SciTech Connect

Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2014-03-31T23:59:59.000Z

410

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN  

E-Print Network (OSTI)

. Hasama, "Subpicosecond saturation of intersubband absorption in (CdS/ZnSe)/BeTe quantum well waveguides. Cho, "Intersubband absorption at ~ 1.55 m in well- and modulation-doped GaN/AlGaN multiple quantum

411

Atomic-Level Study of Melting Behavior of GaN Nanotubes. | EMSL  

NLE Websites -- All DOE Office Websites (Extended Search)

Melting Behavior of GaN Nanotubes. Atomic-Level Study of Melting Behavior of GaN Nanotubes. Abstract: Molecular dynamics simulations with a Stillinger-Weber potential have been...

412

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

413

Structural ordering and interface morphology in symmetrically strained(GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)  

Science Journals Connector (OSTI)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest ?110? directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation. A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

C. Giannini; L. Tapfer; Y. Zhuang; L. De Caro; T. Marschner; W. Stolz

1997-02-15T23:59:59.000Z

414

NETL Technologies Recognized for Technology Development, Transfer |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Recognized for Technology Development, Transfer Recognized for Technology Development, Transfer NETL Technologies Recognized for Technology Development, Transfer October 25, 2013 - 1:31pm Addthis Did you know? The Federal Laboratory Consortium for Technology Transfer is the nationwide network of federal laboratories that provides the forum to develop strategies and opportunities for linking laboratory mission technologies and expertise with the marketplace. In consonance with the Federal Technology Transfer Act of 1986 and related federal policy, the mission of the FLC is to promote and facilitate the rapid movement of federal laboratory research results and technologies into the mainstream of the U.S. economy. Learn more about the FLC. A great invention that sits on a shelf, gathering dust, benefits no one.

415

NREL: Technology Transfer - Technologies Available for Licensing  

NLE Websites -- All DOE Office Websites (Extended Search)

Technologies Available for Licensing Technologies Available for Licensing Photo of NREL scientist in the NREL Hydrogen Lab. NREL's scientists and engineers develop award-winning technologies available for licensing. NREL scientists and engineers produce breakthrough and award-winning renewable energy and energy efficiency technologies that are available for licensing. We have many licensing opportunities for NREL-developed technologies, including our featured LED technologies. To see all our technologies available for licensing, visit the EERE Innovation Portal and search for NREL. Learn about our licensing agreement process. Contact For more information about licensing NREL-developed technologies, contact Eric Payne, 303-275-3166. Ombuds NREL strives to quickly resolve any issue or concern you may have regarding

416

THERMAL STUDY OF A GaN-BASED HEMT A Dissertation  

E-Print Network (OSTI)

of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) under bias conditions. An experimental

Sen, Mihir

417

Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films  

SciTech Connect

We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

2007-08-15T23:59:59.000Z

418

Doping and isolation of GaN, InGaN and InAlN using ion implantation  

SciTech Connect

Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantation, respectively, followed annealing at {ge} 1050{degrees}C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In{sub 0.75}Al{sub 0.25}N with multiple energy inert species (e.g. N{sup +} or F{sup +}) produces high resistivity ({ge}10{sup 8}{omega}/{open_square}) after subsequent annealing in the range 600-700{degrees}C. Smaller increases in sheet resistance are observed for In{sub x}Ga{sup 1-x}N (x=0.33-0.75) under the same conditions due to the smaller energy bandgaps and the shallower energy levels of the damage-related states controlling the resistivity.

Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States)] [and others

1995-08-01T23:59:59.000Z

419

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Universit, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

420

Capillary flow as the cause of ring stains from dried liquid drops  

Science Journals Connector (OSTI)

... and Technology of Water Based Inks(Blackie Academic & Professional, London, (1997)).TAPPI New Printing Technologies Symposium 1996( ... New Printing Technologies Symposium 1996(TAPPI Press, Atlanta, (1996)).

Robert D. Deegan; Olgica Bakajin; Todd F. Dupont; Greb Huber; Sidney R. Nagel; Thomas A. Witten

1997-10-23T23:59:59.000Z

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Novel photoaffinity ligands for the GA-receptor  

SciTech Connect

Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

Suttle, J.C.; Hultstrand, J.F.; Tanaka, F.S. (USDA/ARS Biosciences Research Laboratory, Fargo, ND (USA))

1990-05-01T23:59:59.000Z

422

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

423

Fujita LaboratoryTokyo Instituteof Technology Tokyo Instituteof Technology  

E-Print Network (OSTI)

Fujita LaboratoryTokyo Instituteof Technology Tokyo Instituteof Technology Fujita LaboratoryTokyo Institute of Technology Tokyo Institute of Technology 231 #12;Fujita LaboratoryTokyo Instituteof Technology Tokyo Instituteof Technology 2 IT #12;Fujita LaboratoryTokyo Instituteof

424

Invited Paper GaAs/A1O photonic bandgap material fabrication and characterization  

E-Print Network (OSTI)

semiconductor crystals, photonic crystals do not occur naturally. There are, therefore, several seemingly direct bandgap semiconductors, such as GaAs, A1GaAs, InP, InGaAsP, etc., in which the radiative-dimensional photonic bandgaps for microwave and millimeter-wave radiation, and for shorter optical wavelengths in one

Zhou, Weidong

425

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a  

E-Print Network (OSTI)

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

Woodall, Jerry M.

426

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

427

Free carrier induced spectral shift for GaAs filled metallic hole arrays  

E-Print Network (OSTI)

. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

New Mexico, University of

428

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network (OSTI)

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

429

Modern Biomass Conversion Technologies  

Science Journals Connector (OSTI)

This article gives an overview of the state-of-the-art of key biomass conversion technologies currently deployed and technologies that may...2...capture and sequestration technology (CCS). In doing so, special at...

Andre Faaij

2006-03-01T23:59:59.000Z

430

Building Technologies Research and  

E-Print Network (OSTI)

Building Technologies Research and Integration Center Breaking new ground in energy efficiency #12;Building Technologies Research To enjoy a sustainable energy and environmental future, America must these enormous challenges. Today, through the Building Technologies and Research Integration Center (BTRIC

Oak Ridge National Laboratory

431

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

432

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

433

Surface morphology and magnetic anisotropy in (Ga,Mn)As  

E-Print Network (OSTI)

Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy.

S. Piano; X. Marti; A. W. Rushforth; K. W. Edmonds; R. P. Campion; O. Caha; T. U. Schulli; V. Holy; B. L. Gallagher

2010-10-01T23:59:59.000Z

434

Operating experience with a GaAs photoemission electron source  

SciTech Connect

We report on the development of several operating procedures that promise to make GaAs photoemission electron sources easier to construct, more reliable to operate, and more amenable to use in dynamic vacuum systems. We describe in particular a method for ''ohmically'' heating a <100> crystal of GaAs under vacuum to approximately 600 /sup 0/C. We also discuss our observations of the role of oxygen in the activation of the crystal surface, the use of continuous cesiation, and of the performance of the crystal under varying vacuum conditions.

Tang, F.C.; Lubell, M.S.; Rubin, K.; Vasilakis, A.; Eminyan, M.; Slevin, J.

1986-12-01T23:59:59.000Z

435

An investigation on reliable passivation of GaP  

E-Print Network (OSTI)

reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index... reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index...

Greaves King, Carlos A.

2012-06-07T23:59:59.000Z

436

Interband transitions in molecular?beam?epitaxial Al x Ga1?x As/GaAs  

Science Journals Connector (OSTI)

Interband transition energies for Al x Ga1?x As layers grown by molecular?beam epitaxy(MBE) techniques have been determined using the electrolyte electroreflectance (EER) technique. The observed data fit quadratic relations for E 0 E 0+?0 E 1 and E 1+?1 to describe variations of energy with composition. Although the x values were not accurately known the internal consistency of the data is excellent. Given a single bowing parameter we show that accurate values of x can be determined. The EER technique can provide x values with an accuracy better than 0.02 and information on changes in x as small as 0.002. It is thus ideally suited for studying MBE materials.

J. L. Aubel; U. K. Reddy; S. Sundaram; W. T. Beard; James Comas

1985-01-01T23:59:59.000Z

437

Vehicle Technologies Office Merit Review 2014: Carbon Fiber Technology...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Vehicle Technologies Office Merit Review 2014: Carbon Fiber Technology Facility Vehicle Technologies Office Merit Review 2014: Carbon Fiber Technology Facility Presentation given...

438

Technologies | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Technologies Technologies Technologies October 7, 2013 - 10:20am Addthis The Federal Energy Management Program (FEMP) offers information about energy-efficient and renewable energy technologies through the following areas. Energy-Efficient Product Procurement: Find energy-efficient product requirements and technology, purchasing specifications, energy cost savings calculators, model contract language, and resources. Technology Deployment: Look up information about developing, measuring, and implementing new and underutilized technologies for energy management in the Federal Government. Renewable Energy: Read about renewable energy requirements, resources and technologies, project planning, purchasing renewable power, and more. See FEMP's other program areas. Addthis FEMP Home

439

Emerging Technologies Program  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Emerging Technologies Program Emerging Technologies Program Pat Phelan Program Manager patrick.phelan@ee.doe.gov (202)287-1906 April 2, 2013 Building Technologies Office Program Peer Review 2 | Building Technologies Office eere.energy.gov How ET Fits into BTO Research & Development * Develop technology roadmaps * Prioritize opportunities * Solicit and select innovative technology solutions * Collaborate with researchers * Solve technical barriers and test innovations to prove effectiveness * Measure and validate energy savings ET Mission: Accelerate the research, development and commercialization of emerging, high impact building technologies that are five years or less to market ready. 3 | Building Technologies Office eere.energy.gov

440

Partnerships and Technology Transfer  

NLE Websites -- All DOE Office Websites (Extended Search)

Partnerships and Technology Transfer User Facilities Visiting Us Contact Us Home About Us Success Stories Events News ORNL Inventors (internal only) Find a Technology Search go...

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Technology Transfer Ombudsman Program  

Energy.gov (U.S. Department of Energy (DOE))

The Technology Transfer Commercialization Act of 2000, Public Law 106-404 (PDF) was enacted in November 2000. Pursuant to Section 11, Technology Partnerships Ombudsman, each DOE national...

442

Vehicle Technologies Office: News  

Energy.gov (U.S. Department of Energy (DOE))

EERE intends to issue, on behalf of its Fuel Cell Technologies Office, a Funding Opportunity Announcement (FOA) entitled "Fuel Cell Technologies Incubator: Innovations in Fuel Cell and Hydrogen...

443

Sandia Science & Technology Park  

NLE Websites -- All DOE Office Websites (Extended Search)

search this site Sandia Science & Technology Park An internationally recognized technology community Home Properties Center for Collaboration & Commercialization (C3) Available...

444

Window industry technology roadmap  

SciTech Connect

Technology roadmap describing technology vision, barriers, and RD and D goals and strategies compiled by window industry stakeholders and government agencies.

Brandegee

2000-04-27T23:59:59.000Z

445

Technology Partnering Mechanisms  

NLE Websites -- All DOE Office Websites (Extended Search)

expand a business with INL technologies, or require business support our Technology Transfer team is available to discuss the following contractual mechanisms: Cooperative...

446

Hydropower Program Technology Overview  

SciTech Connect

New fact sheets for the DOE Office of Power Technologies (OPT) that provide technology overviews, description of DOE programs, and market potential for each OPT program area.

Not Available

2001-10-01T23:59:59.000Z

447

Green Purchasing & Green Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

Purchasing & Technology Goals 6 & 7: Green Purchasing & Green Technology Our goal is to purchase and use environmentally sustainable products whenever possible and to implement...

448

Technology and energy supply  

U.S. Energy Information Administration (EIA) Indexed Site

2010 Energy Conference Energy and the Economy Technology and Energy Transformation Science and Technology + Economics and Business + Society and Environment + Policy and...

449

Building Technologies Office Overview  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

data * Utilize energy performance data to inform decision making * Improve measurement and track and analyze results TECHNOLOGY TO MARKET TECHNOLOGY DEVELOPMENT 5...

450

Geothermal Technologies Subject Portal  

NLE Websites -- All DOE Office Websites (Extended Search)

alike at: Introducing The Geothermal Technologies Subject Portal is sponsored by the Geothermal Technologies Program, DOE Energy Efficiency and Renewable Energy (EERE), and is...

451

Geothermal Technologies Legacy Collection  

NLE Websites -- All DOE Office Websites (Extended Search)

sponsored by DOE The Geothermal Technologies Subject Portal founding sponsorship by the Geothermal Technologies Program, DOE Energy Efficiency and Renewable Energy (EERE), and...

452

Technology Readiness Assessment Report  

Energy.gov (U.S. Department of Energy (DOE))

This document has been developed to guide individuals and teams that will be involved in conducting Technology Readiness Assessments (TRAs) and developing Technology Maturation Plans (TMPs) for the...

453

Technology Integration Overview  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Technology Integration Overview Dennis A. Smith - Clean Cities Deployment Connie Bezanson - Vehicle Education June 17, 2014 VEHICLE TECHNOLOGIES OFFICE This presentation does not...

454

Integrated Technology Deployment  

Office of Energy Efficiency and Renewable Energy (EERE)

Integrated technology deployment is a comprehensive approach to implementing solutions that increase the use of energy efficiency and renewable energy technologies. Federal, state, and local...

455

Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells  

Science Journals Connector (OSTI)

Dry etch induced damage of GaAs/InGaAs/GaAs heterostructures in an electron cyclotron resonance (ECR) argon discharge has been investigated as a function of additional radio frequency self?biasing of the sample and process pressure in argon ECR discharges. We used depth resolved photoluminescence measurements to determine the influence of the etch process on the samples. We observe a decreasing damage depth for smaller bias voltages reaching its lowest value of 1.7 nm at 20 V bias and a pressure of 0.15 Pa. For lower pressures we observe a strong increase of the damage which is attributed predominantly to high energetic vacuum ultraviolet radiation from the ECR region.

T. Bickl; B. Jacobs; J. Straka; A. Forchel

1993-01-01T23:59:59.000Z

456

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration  

SciTech Connect

We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-04-21T23:59:59.000Z

457

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures  

SciTech Connect

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

2009-06-08T23:59:59.000Z

458

Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy  

Science Journals Connector (OSTI)

The mechanisms of Ga-assisted GaAs nanowires grown by molecular beam epitaxy are addressed. The axial and radial growth rates as a function of the Ga rate and As pressure indicate that on the opposite of what is observed in thin film epitaxy, the growth rate of the nanowires is arsenic limited. As a consequence, the axial growth rate of the wires can be controlled by the As4 pressure. Additionally, due to the small As4 pressure leading to nanowire growth, the deposition on the facets is very slow, leading to a much lower radial growth rate. Finally, we present a model that is able to accurately describe the presented observations and predicts a maximum length of nontapered nanowires of 40?m.

C. Colombo; D. Spirkoska; M. Frimmer; G. Abstreiter; A. Fontcuberta i Morral

2008-04-28T23:59:59.000Z

459

Carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well structures  

Science Journals Connector (OSTI)

The carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well heterostructures have been determined as a function of the incorporated compressive strain in the (GaIn)As quantum-well layer by applying magneto-optical studies. The precise structural parameters, i.e., individual layer thicknesses, strain values, and crystalline perfection, have been determined independently by high-resolution x-ray diffraction and transmission electron microscopy. By analyzing both the allowed and forbidden optical transitions as a function of the magnetic field, detected by polarization-dependent magnetophotoluminescence excitation spectroscopy, the exciton binding energy as well as the effective in-plane electron and heavy-hole masses have been determined quantitatively as a function of strain. The theoretically predicted significant decrease of the in-plane heavy-hole mass with increasing strain has been observed. The obtained results are discussed and compared with the contradictory results reported in the literature.

M. Volk; S. Lutgen; T. Marschner; W. Stolz; E. O. Gbel; P. C. M. Christianen; J. C. Maan

1995-10-15T23:59:59.000Z

460

Morgantown Energy Technology Center, technology summary  

SciTech Connect

This document has been prepared by the DOE Environmental Management (EM) Office of Technology Development (OTD) to highlight its research, development, demonstration, testing, and evaluation activities funded through the Morgantown Energy Technology Center (METC). Technologies and processes described have the potential to enhance DOE`s cleanup and waste management efforts, as well as improve US industry`s competitiveness in global environmental markets. METC`s R&D programs are focused on commercialization of technologies that will be carried out in the private sector. META has solicited two PRDAs for EM. The first, in the area of groundwater and soil technologies, resulted in twenty-one contact awards to private sector and university technology developers. The second PRDA solicited novel decontamination and decommissioning technologies and resulted in eighteen contract awards. In addition to the PRDAs, METC solicited the first EM ROA in 1993. The ROA solicited research in a broad range of EM-related topics including in situ remediation, characterization, sensors, and monitoring technologies, efficient separation technologies, mixed waste treatment technologies, and robotics. This document describes these technology development activities.

Not Available

1994-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method  

SciTech Connect

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

2014-03-15T23:59:59.000Z

462

InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy  

SciTech Connect

We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAs nanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS) indicates formation of axial In{sub x}Ga{sub 1-x}As (x{approx}0.20) inserts with thicknesses from 36 to 220 nm with {+-}10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth. Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillar heterostructures is crucial for optimized device integration.

Shapiro, J. N.; Lin, A.; Wong, P. S.; Scofield, A. C.; Tu, C.; Senanayake, P. N.; Mariani, G.; Liang, B. L.; Huffaker, D. L. [Department of Electrical Engineering and California Nano-Systems Institute, University of California at Los Angeles, Los Angeles, California 90095 (United States)

2010-12-13T23:59:59.000Z

463

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

464

Chevron, GE form Technology Alliance  

NLE Websites -- All DOE Office Websites (Extended Search)

Chevron, GE form Technology Alliance Chevron, GE form Technology Alliance The Chevron GE Technology Alliance will develop and commercialize valuable technologies to solve critical...

465

Structure of negatively charged muonium in n-type GaAs  

Science Journals Connector (OSTI)

Muon level-crossing resonance and muon-spin-rotation measurements on heavily doped n-type GaAs:Si and GaAs:Te show that the majority of positive muons implanted at room temperature form an isolated diamagnetic muonium center located at a high-symmetry site with Ga neighbors along the ?111? direction(s). These experiments, together with theoretical considerations, imply that negatively charged muonium is at or near the tetrahedral interstitial site with four Ga nearest-neighbor atoms. Except for zero-point energy differences, these results should model negatively charged isolated hydrogen in GaAs.

K.H. Chow; R.F. Kiefl; W.A. MacFarlane; J.W. Schneider; D.W. Cooke; M. Leon; M. Paciotti; T.L. Estle; B. Hitti; R.L. Lichti; S.F.J. Cox; C. Schwab; E.A. Davis; A. Morrobel-Sosa; L. Zavieh

1995-05-15T23:59:59.000Z

466

Critical size for the generation of misfit dislocations and their effects on electronic properties in GaAs nanosheets on Si substrate  

SciTech Connect

While nanowires and nanosheets (NSs) grown on lattice-mismatched substrates have a number of promising technological applications such as solar cells, generation of misfit dislocations (MFDs) at their interfaces is a major concern for the efficiency of these devices. Here, combined molecular-dynamics and quantum-mechanical simulations are used to study MFDs at the interface between a GaAs NS and a Si substrate. Simulation results show the existence of a critical NS thickness, below which NSs are grown free of MFDs. The calculated critical thickness value is consistent with available experimental observations. Charge transfer at the MFD core is found to modify the electronic band profile at the GaAs/Si interface significantly. These effects should have profound impacts on the efficiency of lattice-mismatched NS devices.

Yuan, Zaoshi [Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242 (United States) [Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242 (United States); Department of Chemical Engineering, Stanford University, Stanford, California 94305-5025 (United States); Shimamura, Kohei [Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242 (United States) [Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242 (United States); Department of Physics, Kumamoto University, Kumamoto 860-8555 (Japan); Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395 (Japan); Shimojo, Fuyuki [Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242 (United States) [Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242 (United States); Department of Physics, Kumamoto University, Kumamoto 860-8555 (Japan); Nakano, Aiichiro [Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242 (United States)] [Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242 (United States)

2013-08-21T23:59:59.000Z

467

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network (OSTI)

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

468

Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy  

SciTech Connect

We report on the studies of optical phonon modes in nearly defect-free GaN nanowires embedded with intrinsic InGaN quantum dots by using oblique angle transmission infrared spectroscopy. These phonon modes are dependent on the nanowire fill-factor, doping densities of the nanowires, and the presence of InGaN dots. These factors can be applied for potential phonon based photodetectors whose spectral responses can be tailored by varying a combination of these three parameters. The optical anisotropy along the growth (c-) axis of the GaN nanowire contributes to the polarization agility of such potential photodetectors.

Titus, J.; Perera, A. G. U. [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)] [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States); Nguyen, H. P. T.; Mi, Z. [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)] [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)

2013-03-25T23:59:59.000Z

469

GA103 a microprogrammable processor for online filtering  

E-Print Network (OSTI)

GA103 is a 16 bit microprogrammable processor, which emulates the PDP 11 instruction set. It is based on the Am2900 slices. It allows user- implemented microinstructions and addition of hardwired processors. It will perform online filtering tasks in the NA14 experiment at CERN, based on the reconstruction of transverse momentum of photons detected in a lead glass calorimeter. (3 refs).

Calzas, A; Danon, G

1981-01-01T23:59:59.000Z

470

Response of GaAs to fast intense laser pulses  

E-Print Network (OSTI)

Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight...

Graves, JS; Allen, Roland E.

1998-01-01T23:59:59.000Z

471

Recombination in Low-Bandgap InGaAs  

SciTech Connect

We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

Gfroerer, T. H.; Wanlass, M. W.

2006-01-01T23:59:59.000Z

472

High-quality InP on GaAs  

E-Print Network (OSTI)

In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

Quitoriano, Nathaniel Joseph

2006-01-01T23:59:59.000Z

473

MOCVD Growth of AlGaInN for UV Emitters  

SciTech Connect

Issues related to the growth of nitride-based UV emitters are investigated in this work. More than 100 times of improved in the optical efficiency of the GaN active region can be attained with a combination of raising the growth pressure and introducing a small amount of indium. The unique issue in the UV emitter concerning the use of AlGaN for confinement and the associated tensile cracking is also investigated. They showed that the quaternary AlGaInN is potentially capable of providing confinement to GaN and GaN:In active regions while maintaining lattice matching to GaN, unlike the AlGaN ternary system.

Crawford, Mary; Han, Jung

1999-07-07T23:59:59.000Z

474

Additive Manufacturing Technologies  

Science Journals Connector (OSTI)

Rapid Prototyping is the construction of complex three-dimensional parts using additive manufacturing technology.

Jrgen Stampfl; Markus Hatzenbichler

2014-01-01T23:59:59.000Z

475

Calculus For Technology II  

E-Print Network (OSTI)

MA 22200, Spring 2012. Calculus For Technology II ... Other Information. Emergency procedures Exam info (A Hoffman)...

476

Tracers and Exploration Technologies  

Energy.gov (U.S. Department of Energy (DOE))

Below are the project presentations and respective peer review results for Tracers and Exploration Technologies.

477

The Technology & Innovation Centre  

E-Print Network (OSTI)

The Technology & Innovation Centre #12;The Technology and Innovation Centre revolutionises the way in Scotland and further afield ­ including power and energy, renewable technologies, photonics and sensors, for industry, the Technology and Innovation Centre has already attracted major partners including Scottish

Mottram, Nigel

478

UNIVERSITY of STRATHCLYDE TECHNOLOGY &  

E-Print Network (OSTI)

UNIVERSITY of STRATHCLYDE TECHNOLOGY & INNOVATION CENTRE #12;#12;#12;The Technology and Innovation HEALTH TECHNOLOGIES ADVANCED MANUFACTURING #12;Inspiring research and innovation with industry-by-side on innovative technology programmes aimed at addressing major challenges in: Low Carbon Power and Energy

Mottram, Nigel

479

General com Technology community  

E-Print Network (OSTI)

Campus IT General com m unity Technology community ITsystem owners Campus Council for Information Technology (CCFIT) · ~30 members · Advisory evaluation and review role · Input from faculty, staff, students formal representation on steering team and subcommittees Technology Support Program · Technology support

Ferrara, Katherine W.

480

Predictive Maintenance Technologies  

Energy.gov (U.S. Department of Energy (DOE))

Several diagnostic technologies and best practices are available to assist Federal agencies with predictive maintenance programs.

Note: This page contains sample records for the topic "technology atlanta ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Technology Transfer: About the Technology Transfer Department  

NLE Websites -- All DOE Office Websites (Extended Search)

About the Technology Transfer and Intellectual Property Management About the Technology Transfer and Intellectual Property Management Department The Technology Transfer Department helps move technologies from the Lab to the marketplace to benefit society and the U. S. economy. We accomplish this through developing and managing an array of partnerships with the private and public sectors. What We Do We license a wide range of cutting-edge technologies to companies that have the financial, R & D, manufacturing, marketing, and managerial capabilities to successfully commercialize Lab inventions. In addition, we manage lab-industry research partnerships, ensure that inventions receive appropriate patent or copyright protection, license technology to start-up companies, distribute royalties to the Lab and to inventors and serve as

482

NREL: Technology Transfer - About Technology Transfer  

NLE Websites -- All DOE Office Websites (Extended Search)

About Technology Transfer About Technology Transfer Through technology partnerships, NREL seeks to reduce private sector risk and enable investment in the adoption of renewable energy and energy efficiency technologies. The transfer of these technologies to the marketplace helps displace oil, reduce carbon emissions, and increase U.S. industry competitiveness. Principles NREL develops and implements technology partnerships based on the standards established by the following principles: Balancing Public and Private Interest Form partnerships that serve the public interest and advance U.S. Department of Energy goals. Demonstrate appropriate stewardship of publicly funded assets, yielding national benefits. Provide value to the commercial partner. Focusing on Outcomes Develop mutually beneficial collaborations through processes, which are

483

Building Technologies Office: Webinars  

NLE Websites -- All DOE Office Websites (Extended Search)

Webinars Webinars Printable Version Share this resource Send a link to Building Technologies Office: Webinars to someone by E-mail Share Building Technologies Office: Webinars on Facebook Tweet about Building Technologies Office: Webinars on Twitter Bookmark Building Technologies Office: Webinars on Google Bookmark Building Technologies Office: Webinars on Delicious Rank Building Technologies Office: Webinars on Digg Find More places to share Building Technologies Office: Webinars on AddThis.com... Popular Links Success Stories Previous Next Lighten Energy Loads with System Design. Warming Up to Pump Heat. Cut Refrigerator Energy Use to Save Money. Tools EnergyPlus Whole Building Simulation Program Building Energy Software Tools Directory High Performance Buildings Database

484

Building Technologies Office: Resources  

NLE Websites -- All DOE Office Websites (Extended Search)

Resources to someone by Resources to someone by E-mail Share Building Technologies Office: Resources on Facebook Tweet about Building Technologies Office: Resources on Twitter Bookmark Building Technologies Office: Resources on Google Bookmark Building Technologies Office: Resources on Delicious Rank Building Technologies Office: Resources on Digg Find More places to share Building Technologies Office: Resources on AddThis.com... About Take Action to Save Energy Partner With DOE Activities Solar Decathlon Building America Home Energy Score Home Performance with ENERGY STAR Better Buildings Neighborhood Program Challenge Home Partner Log In Become a Partner Criteria Partner Locator Resources Housing Innovation Awards Events Guidelines for Home Energy Professionals Technology Research, Standards, & Codes

485

Soil washing technology evaluation  

SciTech Connect

Environmental Restoration Engineering (ERE) continues to review innovative, efficient, and cost effective technologies for SRS soil and/or groundwater remediation. As part of this effort, this technical evaluation provides review and the latest information on the technology for SRS soil remediation. Additional technology evaluation reports will be issued periodically to update these reports. The purpose of this report is to review the soil washing technology and its potential application to SRS soil remediation. To assess whether the Soil Washing technology is a viable option for SRS soil remediation, it is necessary to review the technology/process, technology advantages/limitations, performance, applications, and cost analysis.

Suer, A.

1995-04-01T23:59:59.000Z

486

Pretreatment Technology Plan  

SciTech Connect

This technology plan presents a strategy for the identification, evaluation, and development of technologies for the pretreatment of radioactive wastes stored in underground storage tanks at the Hanford Site. This strategy includes deployment of facilities and process development schedules to support the other program elements. This document also presents schedule information for alternative pretreatment systems: (1) the reference pretreatment technology development system, (2) an enhanced pretreatment technology development system, and (3) alternative pretreatment technology development systems.

Barker, S.A. [Westinghouse Hanford Co., Richland, WA (US); Thornhill, C.K.; Holton, L.K. Jr. [Pacific Northwest Lab., Richland, WA (US)

1993-03-01T23:59:59.000Z

487

NATIONAL ENERGY TECHNOLOGY LABORATORY Technology Transfer Novel...  

NLE Websites -- All DOE Office Websites (Extended Search)

Alloy for the Manufacture of Improved Coronary Stents Success Story NETL Technology Transfer Group techtransfer@netl.doe.gov Contact Partners A coronary stent is a small,...

488

NATIONAL ENERGY TECHNOLOGY LABORATORY Technology Transfer Basic...  

NLE Websites -- All DOE Office Websites (Extended Search)

Basic Immobilized Amine Sorbent (BIAS) Process Success Story NETL Technology Transfer Group techtransfer@netl.doe.gov Contact Capturing carbon dioxide (CO 2 ) from the flue or...

489

Projected Performance of Three- and Four-Junction Devices Using GaAs and GaInP  

E-Print Network (OSTI)

This paper explores the efficiencies expected for three- and four-junction devices for both space and terrestrial applications. For space applications, the effects of temperature and low concentration are investigated. For terrestrial applications, a concentration of 500 suns is assumed and the theoretical efficiencies are calculated as a function of spectral variations including the effects of air mass, turbidity, and water-vapor content. INTRODUCTION Ga 0.5 In 0.5 P/GaAs two-terminal, two-junction solar cells, invented and developed at the National Renewable Energy Laboratory, are in production at both TECSTAR and Spectrolab. The immediate market for these devices is in space; a future (potentially larger) market is terrestrial concentrator systems. The next-generation cells will add additional junction(s) in order to increase the efficiency. Work on a three-junction cell using an active Ge junction under the Ga 0.5 In 0.5 P/GaAs dual-junction cell has already been reported [1]. Ho...

Gainp; S. R. Kurtz; Sarah R. Kurtz; D. Myers; D. Myers; J.M. Olson; J. M. Olson

1997-01-01T23:59:59.000Z

490

Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/InGaAlAs superlattices  

E-Print Network (OSTI)

of thermoelectric energy conversion devices depends on the thermoelectric figure of merit ZT of a material, which- troduced charge carriers in the ErAs:InGaAs regions of 0, 2 1018 , 4 1018 , and 8 1018 cm-3 , respectively. There- fore, the effective carrier concentrations in the four samples were 2 1018 , 4 1018 , 6 1018

491

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

SciTech Connect

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

492

Development of new materials for solar cells in Nagoya Institute of Technology  

Science Journals Connector (OSTI)

Solar cells with high efficiency and low price have long been desired, however, the commercially available solar cells are still expensive and the efficiencies of them are not high enough yet. A tandem solar cell was fabricated to develop a high-efficiency solar cell, and amorphous carbon solar cells were fabricated to develop a low-price solar cell.An AlGaAs/Si tandem solar cell was successfully fabricated by heteroepitaxial growth of AlGaAs on Si substrate. At first, a pn junction was formed in Si substrate by the impurity diffusion method. Then, an AlGaAs pn junction was grown by MOCVD. Since the AlGaAs pn junction has a graded band gap emitter, the photo-excited minority carriers can be collected efficiently. The energy conversion efficiency of AlGaAs/Si tandem solar cell was 21.4% (AM0) in spite of large lattice mismatch and difference in thermal expansion coefficients between AlGaAs and Si.Solar cells were fabricated by using amorphous carbon films deposited by Ion Beam Sputtering and Pulse Laser Deposition (PLD). The highest efficiency of 1.82% (AM0) was attained with a-C(IBS)/p-C(pyrolysis)/p-Si structure. Solar cells using a-C:H were also fabricated by PLD and Plasma CVD, and the efficiencies of them were 2.1% (AM1.5) and 0.04% (AM0), respectively.Other research activities on solar cells in Nagoya Institute of Technology are briefly mentioned.

Takashi Jimbo; Tetsuo Soga; Yasuhiko Hayashi

2005-01-01T23:59:59.000Z

493

Marine and Hydrokinetic Technology Glossary  

Energy.gov (U.S. Department of Energy (DOE))

Learn about the basic technologies and key terms used to describe marine and hydrokinetic technologies.

494

Vehicle Technologies Office: News  

NLE Websites -- All DOE Office Websites (Extended Search)

News News Site Map Printable Version Share this resource Send a link to Vehicle Technologies Office: News to someone by E-mail Share Vehicle Technologies Office: News on Facebook Tweet about Vehicle Technologies Office: News on Twitter Bookmark Vehicle Technologies Office: News on Google Bookmark Vehicle Technologies Office: News on Delicious Rank Vehicle Technologies Office: News on Digg Find More places to share Vehicle Technologies Office: News on AddThis.com... Vehicle Technologies News Blog Newsletters Information for Media Subscribe to News Updates News December 18, 2013 USDA Offers $118 Million for Renewable Energy, Smart Grid Projects The U.S. Department of Agriculture (USDA) announced $73 million in funding for renewable energy projects and $45 million for smart grid technology as

495

06-GA50035b.p65  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WWW.GNEP.ENERGY.GOV WWW.GNEP.ENERGY.GOV United States Department of Energy Continued next page T he Global Nuclear Energy Partnership (GNEP) is a comprehensive strategy to increase U.S. and global energy security, encourage clean development around the world, reduce the risk of nuclear proliferation, and improve the environment. A plentiful, reliable supply of energy is the cornerstone of sustained economic growth and prosperity. Nuclear power is the only proven technology that can provide abundant supplies of base load electricity reliably and without air pollution or emissions of greenhouse gasses. In The Global Nuclear Energy Partnership: Greater Energy Security in a Cleaner, Safer World order to help meet growing demand for energy at home and encourage the growth of prosperity

496

NREL: Technology Transfer - Agreements for Commercializing Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

Agreements for Commercializing Technology Agreements for Commercializing Technology NREL uses Agreements for Commercializing Technology (ACT) when a partner seeks highly-specialized or technical services to complete a project. An ACT agreement also authorizes participating contractor-operated DOE laboratories, such as NREL, to partner with businesses using more flexible terms that are aligned with industry practice. The agreement type used depends on the business, and the specific partnership selected is determined on a case-by-case basis. Benefits The benefits of Agreements for Commercializing Technology include: Intellectual Property Rights. ACT provides a more flexible framework for negotiation of intellectual property rights to facilitate moving technology from the laboratory to the marketplace as quickly as possible.

497

Nuclear Science & Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

Nuclear Science & Technology Nuclear Science & Technology Nuclear Science & Technology1354608000000Nuclear Science & TechnologySome of these resources are LANL-only and will require Remote Access. /No/ Nuclear Science & Technology Some of these resources are LANL-only and will require Remote Access. Key Resources Databases Organizations Journals Key Resources International Atomic Energy Agency IAEA scientific and technical publications cover areas of nuclear power, radiation therapy, nuclear security, nuclear law, and emergency repose. Search under Publications/Books and Reports for scientific books, standards, technical guides and reports National Nuclear Data Center Nuclear physics data for basic nuclear research and for applied nuclear technologies, operated by Brookhaven.

498

Building Technologies Office Overview  

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Roland Risser Roland Risser Director, Building Technologies Office Building Technologies Office Energy Efficiency Starts Here. 2 Building Technologies Office Integrated Approach: Improving Building Performance Research & Development Developing High Impact Technologies Standards & Codes Locking in the Savings Market Stimulation Accelerating Tech-to- Market 3 Building Technologies Office Goal: Reduce building energy use by 50% (compared to a 2010 baseline) 4 Building Technologies Office Working to Overcome Challenges Information Access * Develop building performance tools, techniques, and success stories, such as case studies * Form market partnerships and programs to share best practices * Solution Centers * Certify the workforce to ensure quality work

499

Vehicle Technologies Office: Ambassadors  

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Ambassadors to someone Ambassadors to someone by E-mail Share Vehicle Technologies Office: Ambassadors on Facebook Tweet about Vehicle Technologies Office: Ambassadors on Twitter Bookmark Vehicle Technologies Office: Ambassadors on Google Bookmark Vehicle Technologies Office: Ambassadors on Delicious Rank Vehicle Technologies Office: Ambassadors on Digg Find More places to share Vehicle Technologies Office: Ambassadors on AddThis.com... Goals Research & Development Testing and Analysis Workplace Charging Partners Ambassadors Resources Community and Fleet Readiness Workforce Development Plug-in Electric Vehicle Basics Ambassadors Workplace Charging Challenge Clean Cities Coalitions Clean Cities logo. Clean Cities National: A network of nearly 100 Clean Cities coalitions, supported by the

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The evolution of Ga and As core levels in the formation of Fe/GaAs (001):A high resolution soft x-ray photoelectron spectroscopic study  

SciTech Connect

A high resolution soft x-ray photoelectron spectroscopic study of Ga and As 3d core levels has been conducted for Fe/GaAs (001) as a function of Fe thickness. This work has provided unambiguous evidence of substrate disrupting chemical reactions induced by the Fe overlayer--a quantitative analysis of the acquired spectra indicates significantly differing behavior of Ga and As during Fe growth, and our observations have been compared with existing theoretical models. Our results demonstrate that the outdiffusing Ga and As remain largely confined to the interface region, forming a thin intermixed layer. Whereas at low coverages Fe has little influence on the underlying GaAs substrate, the onset of substrate disruption when the Fe thickness reaches 3.5 Angstrom results in major changes in the energy distribution curves (EDCs) of both As and Ga 3d cores. Our quantitative analysis suggests the presence of two additional As environments of metallic character: one bound to the interfacial region and another which, as confirmed by in situ oxidation experiments, surface segregates and persists over a wide range of overlayer thickness. Analysis of the corresponding Ga 3d EDCs found not two, but three additional environments--also metallic in nature. Two of the three are interface resident whereas the third undergoes outdiffusion at low Fe coverages. Based on the variations of the integrated intensities of each component, we present a schematic of the proposed chemical makeup of the Fe/GaAs (001) system.

Thompson, Jamie; Neal, James; Shen, Tiehan; Morton, Simon; Tobin, James; Waddill, George Dan; Matthew, Jim; Greig, Denis; Hopkinson, Mark

2008-07-14T23:59:59.000Z