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1

Evidence on the absence of critical transition in AMPT for Pb-Pb collisions at $sqrt{s_{\\rm{NN}}}$ = 2.76 TeV  

E-Print Network [OSTI]

Event-by-event fluctuations in the spatial patterns in charged particles generated in Pb--Pb collisions at the center-of-mass energy $\\sqrt{S_{\\rm{NN}}}$ = 2.76 TeV are studied within A MultiPhase Transport (AMPT) model. The spatial patterns of the particles generated in the ($\\eta, \\phi$) space for $|\\eta| \\le 0.8$ are studied using the methodology of intermittency and erraticity analysis. We find negative intermittency for charged particles generated in a range of $p_{\\rm{T}}$ windows. This result contrasts sharply from what is expected for a quark-gluon plasma undergoing hadronization by a second-order phase transition. Appropriate scaling behavior is examined, resulting in definitive scaling exponent $\

Ramni Gupta; Rohni Sharma

2015-01-28T23:59:59.000Z

2

Centrality dependence of particle production in p-Pb collisions at $\\sqrt{s_{\\rm NN} }$= 5.02 TeV  

E-Print Network [OSTI]

We report measurements of the primary charged particle pseudorapidity density and transverse momentum distributions in p-Pb collisions at $\\sqrt{s_{\\rm NN}}$ = 5.02 TeV, and investigate their correlation with experimental observables sensitive to the centrality of the collision. Centrality classes are defined using different event activity estimators, i.e. charged particle multiplicities measured in three disjunct pseudorapidity regions as well as the energy measured at beam rapidity (zero-degree). The procedures to determine the centrality, quantified by the number of participants ($N_{\\rm part}$), or the number of nucleon-nucleon binary collisions ($N_{\\rm coll}$), are described. We show that, in contrast to Pb-Pb collisions, in p-Pb collisions large multiplicity fluctuations together with the small range of participants available, generate a dynamical bias in centrality classes based on particle multiplicity. We propose to use the zero-degree energy, which we expect not to introduce a dynamical bias, as an alternative event-centrality estimator. Based on zero-degree energy centrality classes, the $N_{\\rm part}$ dependence of particle production is studied. Under the assumption that the multiplicity measured in the Pb-going rapidity region scales with the number of Pb-participants, an approximate independence of the multiplicity per participating nucleon measured at mid-rapitity of the number of participating nucleons is observed. Furthermore, at high-$p_{\\rm T}$ the p-Pb spectra are found to be consistent with the pp spectra scaled by $N_{\\rm coll}$ for all centrality classes. Our results represent valuable input for the study of the event activity dependence of hard probes in p-Pb collision and, hence, help to establish baselines for the interpretation of the Pb-Pb data.

ALICE Collaboration

2014-12-21T23:59:59.000Z

3

Centrality dependence of the pseudorapidity density distribution for charged particles in Pb-Pb collisions at $\\sqrt{s_{\\rm NN}}$ = 2.76 TeV  

E-Print Network [OSTI]

We present the first wide-range measurement of the charged-particle pseudorapidity density distribution, for different centralities (the 0-5%, 5-10%, 10-20%, and 20-30% most central events) in Pb-Pb collisions at $\\sqrt{s_{\\rm NN}} = 2.76$ TeV at the LHC. The measurement is performed using the full coverage of the ALICE detectors, $-5.0 assumptions. The rapidity density distribution is found to be significantly wider than the predictions of the Landau model. We assess the validity of longitudinal scaling by comparing to lower energy results from RHIC. Finally the mechanisms of the underlying particle production are discussed based on a comparison with various theoretical models.

ALICE Collaboration

2015-01-22T23:59:59.000Z

4

125Te NMR chemical-shift trends in PbTe–GeTe and PbTe–SnTe alloys  

SciTech Connect (OSTI)

Complex tellurides, such as doped PbTe, GeTe, and their alloys, are among the best thermoelectric materials. Knowledge of the change in 125Te NMR chemical shift due to bonding to dopant or “solute” atoms is useful for determination of phase composition, peak assignment, and analysis of local bonding. We have measured the 125Te NMR chemical shifts in PbTe-based alloys, Pb1?xGexTe and Pb1?xSnxTe, which have a rocksalt-like structure, and analyzed their trends. For low x, several peaks are resolved in the 22-kHz MAS 125Te NMR spectra. A simple linear trend in chemical shifts with the number of Pb neighbors is observed. No evidence of a proposed ferroelectric displacement of Ge atoms in a cubic PbTe matrix is detected at low Ge concentrations. The observed chemical shift trends are compared with the results of DFT calculations, which confirm the linear dependence on the composition of the first-neighbor shell. The data enable determination of the composition of various phases in multiphase telluride materials. They also provide estimates of the 125Te chemical shifts of GeTe and SnTe (+970 and +400±150 ppm, respectively, from PbTe), which are otherwise difficult to access due to Knight shifts of many hundreds of ppm in neat GeTe and SnTe.

Njegic, Bosiljka [Ames Laboratory; Levin, Evgenii M. [Ames Laboratory; Schmidt-Rohr, Klaus [Ames Laboratory

2013-10-08T23:59:59.000Z

5

Azimuthal anisotropies of reconstructed jets in Pb+Pb collisions at $\\sqrt{s_{_{\\rm NN}}}$ = 2.76 TeV in a multiphase transport model  

E-Print Network [OSTI]

Azimuthal anisotropies of reconstructed jets [$v_{n}^{jet} (n=2, 3)$] have been investigated in Pb+Pb collisions at the center of mass energy $\\sqrt{s_{_{\\rm NN}}}$ = 2.76 TeV within a framework of a multiphase transport (AMPT) model. The $v_{2}^{jet}$ is in good agreement with the recent ATLAS data. However, the $v_{3}^{jet}$ shows a smaller magnitude than $v_{2}^{jet}$, and approaches zero at a larger transverse momentum. It is attributed to the path-length dependence in which the jet energy loss fraction depends on the azimuthal angles with respect to different orders of event planes. The ratio $v_{n}^{jet}/\\varepsilon_{n}$ increases from peripheral to noncentral collisions, and $v_{n}^{jet}$ increases with the initial spatial asymmetry ($\\varepsilon_{n}$) for a given centrality bin. These behaviors indicate that the $v_{n}^{jet}$ is produced by the strong interactions between jet and the partonic medium with different initial geometry shapes. Therefore, azimuthal anisotropies of reconstructed jet are proposed as a good probe to study the initial spatial fluctuations, which are expected to provide constraints on the path-length dependence of jet quenching models.

Mao-Wu Nie; Guo-Liang Ma

2014-07-28T23:59:59.000Z

6

Magnetoluminescence of CdTe/MnTe/CdMgTe heterostructures with ultrathin MnTe layers  

SciTech Connect (OSTI)

CdTe/MnTe/CdMgTe quantum-well structures with one or two monolayers of MnTe inserted at CdTe/CdMgTe interfaces were fabricated. The spectra of the excitonic luminescence from CdTe quantum wells and their variation with temperature indicate that introduction of ultrathin MnTe layers improves the interface quality. The effect of a magnetic field in the Faraday configuration on the spectral position of the exciton-emission peaks indicates that frustration of magnetic moments in one-monolayer MnTe insertions is weaker than in two-monolayer insertions. The effect of a magnetic field on the exciton localization can be explained in terms of the exciton wave-function shrinkage and obstruction of the photoexcited charge-carrier motion in the quantum well.

Agekyan, V. F., E-mail: vfag@rambler.ru [St. Petersburg State University, Fock Institute of Physics (Russian Federation); Holz, P. O. [Polish Academy of Sciences, Institute of Physics (Poland); Karczewski, G. [Linkoeping University (Sweden); Katz, V. N. [St. Petersburg State University, Fock Institute of Physics (Russian Federation); Moskalenko, E. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Serov, A. Yu.; Filosofov, N. G. [St. Petersburg State University, Fock Institute of Physics (Russian Federation)

2011-10-15T23:59:59.000Z

7

CdTe/CdZnTe pixellated radiation detector.  

E-Print Network [OSTI]

??The work in this thesis is focused on the study of CdTe/CdZnTe pixellated detectors. During this research, three main aspects have been covered in the… (more)

Mohd Zain, Rasif

2015-01-01T23:59:59.000Z

8

Weak topological insulators in PbTe/SnTe superlattices  

E-Print Network [OSTI]

It is desirable to realize topological phases in artificial structures by engineering electronic band structures. In this paper we investigate (PbTe)[subscript m](SnTe)[subscript 2n?m] superlattices along the [001] direction ...

Yang, Gang

9

Elliptic flow of identified hadrons in Pb-Pb collisions at $\\sqrt{s_{\\rm{NN}}}$ = 2.76 TeV  

E-Print Network [OSTI]

The elliptic flow coefficient ($v_{2}$) of identified particles in Pb--Pb collisions at $\\sqrt{s_\\mathrm{{NN}}} = 2.76$ TeV was measured with the ALICE detector at the LHC. The results were obtained with the Scalar Product method, a two-particle correlation technique, using a pseudo-rapidity gap of $|\\Delta\\eta| > 0.9$ between the identified hadron under study and the reference particles. The $v_2$ is reported for $\\pi^{\\pm}$, $\\mathrm{K}^{\\pm}$, $\\mathrm{K}^0_\\mathrm{S}$, p+$\\overline{\\mathrm{p}}$, $\\mathrm{\\phi}$, $\\Lambda$+$\\overline{\\mathrm{\\Lambda}}$, $\\Xi^-$+$\\overline{\\Xi}^+$ and $\\Omega^-$+$\\overline{\\Omega}^+$ in several collision centralities. In the low transverse momentum ($p_{\\mathrm{T}}$) region, $p_{\\mathrm{T}} 3 $GeV/$c$.

Abelev, Betty Bezverkhny; Adamova, Dagmar; Aggarwal, Madan Mohan; Agnello, Michelangelo; Agostinelli, Andrea; Agrawal, Neelima; Ahammed, Zubayer; Ahmad, Nazeer; Ahmed, Ijaz; Ahn, Sang Un; Ahn, Sul-Ah; Aimo, Ilaria; Aiola, Salvatore; Ajaz, Muhammad; Akindinov, Alexander; Alam, Sk Noor; Aleksandrov, Dmitry; Alessandro, Bruno; Alexandre, Didier; Alici, Andrea; Alkin, Anton; Alme, Johan; Alt, Torsten; Altinpinar, Sedat; Altsybeev, Igor; Alves Garcia Prado, Caio; Andrei, Cristian; Andronic, Anton; Anguelov, Venelin; Anielski, Jonas; Anticic, Tome; Antinori, Federico; Antonioli, Pietro; Aphecetche, Laurent Bernard; Appelshaeuser, Harald; Arcelli, Silvia; Armesto Perez, Nestor; Arnaldi, Roberta; Aronsson, Tomas; Arsene, Ionut Cristian; Arslandok, Mesut; Augustinus, Andre; Averbeck, Ralf Peter; Awes, Terry; Azmi, Mohd Danish; Bach, Matthias Jakob; Badala, Angela; Baek, Yong Wook; Bagnasco, Stefano; Bailhache, Raphaelle Marie; Bala, Renu; Baldisseri, Alberto; Baltasar Dos Santos Pedrosa, Fernando; Baral, Rama Chandra; Barbera, Roberto; Barile, Francesco; Barnafoldi, Gergely Gabor; Barnby, Lee Stuart; Ramillien Barret, Valerie; Bartke, Jerzy Gustaw; Basile, Maurizio; Bastid, Nicole; Basu, Sumit; Bathen, Bastian; Batigne, Guillaume; Batista Camejo, Arianna; Batyunya, Boris; Batzing, Paul Christoph; Baumann, Christoph Heinrich; Bearden, Ian Gardner; Beck, Hans; Bedda, Cristina; Behera, Nirbhay Kumar; Belikov, Iouri; Bellini, Francesca; Bellwied, Rene; Belmont Moreno, Ernesto; Belmont Iii, Ronald John; Belyaev, Vladimir; Bencedi, Gyula; Beole, Stefania; Berceanu, Ionela; Bercuci, Alexandru; Berdnikov, Yaroslav; Berenyi, Daniel; Berger, Martin Emanuel; Bertens, Redmer Alexander; Berzano, Dario; Betev, Latchezar; Bhasin, Anju; Bhat, Inayat Rasool; Bhati, Ashok Kumar; Bhattacharjee, Buddhadeb; Bhom, Jihyun; Bianchi, Livio; Bianchi, Nicola; Bianchin, Chiara; Bielcik, Jaroslav; Bielcikova, Jana; Bilandzic, Ante; Bjelogrlic, Sandro; Blanco, Fernando; Blau, Dmitry; Blume, Christoph; Bock, Friederike; Bogdanov, Alexey; Boggild, Hans; Bogolyubskiy, Mikhail; Boehmer, Felix Valentin; Boldizsar, Laszlo; Bombara, Marek; Book, Julian Heinz; Borel, Herve; Borissov, Alexander; Bossu, Francesco; Botje, Michiel; Botta, Elena; Boettger, Stefan; Braun-Munzinger, Peter; Bregant, Marco; Breitner, Timo Gunther; Broker, Theo Alexander; Browning, Tyler Allen; Broz, Michal; Bruna, Elena; Bruno, Giuseppe Eugenio; Budnikov, Dmitry; Buesching, Henner; Bufalino, Stefania; Buncic, Predrag; Busch, Oliver; Buthelezi, Edith Zinhle; Caffarri, Davide; Cai, Xu; Caines, Helen Louise; Calero Diaz, Liliet; Caliva, Alberto; Calvo Villar, Ernesto; Camerini, Paolo; Carena, Francesco; Carena, Wisla; Castillo Castellanos, Javier Ernesto; Casula, Ester Anna Rita; Catanescu, Vasile Ioan; Cavicchioli, Costanza; Ceballos Sanchez, Cesar; Cepila, Jan; Cerello, Piergiorgio; Chang, Beomsu; Chapeland, Sylvain; Charvet, Jean-Luc Fernand; Chattopadhyay, Subhasis; Chattopadhyay, Sukalyan; Chelnokov, Volodymyr; Cherney, Michael Gerard; Cheshkov, Cvetan Valeriev; Cheynis, Brigitte; Chibante Barroso, Vasco Miguel; Dobrigkeit Chinellato, David; Chochula, Peter; Chojnacki, Marek; Choudhury, Subikash; Christakoglou, Panagiotis; Christensen, Christian Holm; Christiansen, Peter; Chujo, Tatsuya; Chung, Suh-Urk; Cicalo, Corrado; Cifarelli, Luisa; Cindolo, Federico; Cleymans, Jean Willy Andre; Colamaria, Fabio Filippo; Colella, Domenico; Collu, Alberto; Colocci, Manuel; Conesa Balbastre, Gustavo; Conesa Del Valle, Zaida; Connors, Megan Elizabeth; Contreras Nuno, Jesus Guillermo; Cormier, Thomas Michael; Corrales Morales, Yasser; Cortese, Pietro; Cortes Maldonado, Ismael; Cosentino, Mauro Rogerio; Costa, Filippo; Crochet, Philippe; Cruz Albino, Rigoberto; Cuautle Flores, Eleazar; Cunqueiro Mendez, Leticia; Dainese, Andrea; Dang, Ruina; Danu, Andrea; Das, Debasish; Das, Indranil; Das, Kushal; Das, Supriya; Dash, Ajay Kumar; Dash, Sadhana; De, Sudipan; Delagrange, Hugues; Deloff, Andrzej; Denes, Ervin Sandor; D'Erasmo, Ginevra; De Caro, Annalisa; De Cataldo, Giacinto; De Cuveland, Jan; De Falco, Alessandro; De Gruttola, Daniele; De Marco, Nora; De Pasquale, Salvatore; De Rooij, Raoul Stefan; Diaz Corchero, Miguel Angel; Dietel, Thomas; Dillenseger, Pascal; Divia, Roberto; Di Bari, Domenico; Di Liberto, Sergio; Di Mauro, Antonio; Di Nezza, Pasquale; Djuvsland, Oeystein; Dobrin, Alexandru Florin; Dobrowolski, Tadeusz Antoni; Domenicis Gimenez, Diogenes; Donigus, Benjamin; Dordic, Olja; Dorheim, Sverre; Dubey, Anand Kumar; Dubla, Andrea

2014-01-01T23:59:59.000Z

10

Te INCLUSIONS IN CdTe GROWN FROM A SLOWLY COOLED Te SOLUTION AND BY THE TRAVELLING SOLVENT METHOD  

E-Print Network [OSTI]

135 Te INCLUSIONS IN CdTe GROWN FROM A SLOWLY COOLED Te SOLUTION AND BY THE TRAVELLING SOLVENT. Abstract. 2014 CdTe crystals have been grown from a slowly cooled Te solution and with the travelling. Introduction. - CdTe crystals for nuclear radia- tion detectors are usually grown from a slowly cooled solution

Paris-Sud XI, Université de

11

Luminescence Enhancement of CdTe Nanostructures in LaF3:Ce/CdTe...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Enhancement of CdTe Nanostructures in LaF3:CeCdTe Nanocomposites. Luminescence Enhancement of CdTe Nanostructures in LaF3:CeCdTe Nanocomposites. Abstract: Radiation detection...

12

TE Connectivity Finds Answers in Tomography  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

TE Connectivity Finds Answers in Tomography TE Connectivity Finds Answers in Tomography Print Thursday, 22 August 2013 10:50 TE Connectivity is a world leader in connectivity-the...

13

IR spectroscopy of lattice vibrations and comparative analysis of the ZnTe/CdTe quantum-dot superlattices on the GaAs substrate and with the ZnTe and CdTe buffer layers  

SciTech Connect (OSTI)

A comparative analysis of multiperiod ZnTe/CdTe superlattices with the CdTe quantum dots grown by molecular beam epitaxy on the GaAs substrate with the ZnTe and CdTe buffer layers is carried out. The elastic-stress-induced shifts of eigenfrequencies of the modes of the CdTe- and ZnTe-like vibrations of materials forming similar superlattices but grown on different buffer ZnTe and CdTe layers are compared. The conditions of formation of quantum dots in the ZnTe/CdTe superlattices on the ZnTe and CdTe buffer layers differ radically.

Kozyrev, S. P. [Russian Academy of Sciences, Lebedev Institute of Physics (Russian Federation)], E-mail: skozyrev@sci.lebedev.ru

2009-07-15T23:59:59.000Z

14

Upconversion Luminescence of CdTe Nanoparticles. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of CdTe Nanoparticles. Upconversion Luminescence of CdTe Nanoparticles. Abstract: Efficient upconversion luninescence is observed from CdTe nanoparticles in solution and...

15

Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional theory study  

E-Print Network [OSTI]

Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional profiles in CdTe of native, Te adatom and vacancy, and anionic non-native interstitial adatoms P, Sb, O, S B.V. All rights reserved. 1. Introduction Cadmium telluride (CdTe) based thin films have emerged

Khare, Sanjay V.

16

X-ray standing wave study of CdTe/MnTe/CdTe(001) heterointerfaces J. C. Boulliard,a)  

E-Print Network [OSTI]

features of the first stages of growth of ultrathin pseudomorphic MnTe 001 strained layers buried in CdTe on CdTe 001 substrates. Experiments with 004 and 113 reflecting planes show evidence of the presenceTe layers grown in CdTe 001 by molecular beam epitaxy. The results will be compared to high resolution

Boyer, Edmond

17

Observation de super-rseaux CdTe-HgTe par microscopie lectronique en transmission  

E-Print Network [OSTI]

-conducteurs II-VI a été beaucoup plus tardive [2]. Dans cette dernière famille, le système CdTe- HgTe présente l'avantage d'un accord de maille quasi parfait entre les deux composés (a = 0,648 nm pour CdTe contre a = 0 JET MOL�CULAIRE. - Les super- réseaux CdTe-HgTe ont été épitaxiés sur un substrat CdTe d

Paris-Sud XI, Université de

18

TE Connectivity Finds Answers in Tomography  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

TE Connectivity Finds Answers in TE Connectivity Finds Answers in Tomography TE Connectivity Finds Answers in Tomography Print Thursday, 22 August 2013 10:50 TE Connectivity is a world leader in connectivity-the $13 billion global company designs and manufactures more than 500,000 different electronic connectivity products for the automotive, energy, industrial, broadband communications, consumer device, healthcare, aerospace, and defense industries. TE Connectivity has a long-standing commitment to innovation and engineering excellence. Their products help address challenges arising from companies' need for energy efficiency, always-on communications, and ever-increasing productivity. Recently, a team led by TE's senior manager of materials development, Dr. Jerzy Gazda (at left), has been investigating how ALS tomography capabilities can help the company develop more efficient connectors.

19

Si, CdTe and CdZnTe radiation detectors for imaging applications.  

E-Print Network [OSTI]

??The structure and operation of CdTe, CdZnTe and Si pixel detectors based on crystalline semiconductors, bump bonding and CMOS technology and developed mainly at Oy… (more)

Schulman, Tom

2006-01-01T23:59:59.000Z

20

Recycling of CdTe photovoltaic waste  

DOE Patents [OSTI]

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

Goozner, Robert E. (Charlotte, NC); Long, Mark O. (Charlotte, NC); Drinkard, Jr., William F. (Charlotte, NC)

1999-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "te rm te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Recycling ZnTe, CdTe, and Other Compound Semiconductors by Ambipolar Electrolysis  

E-Print Network [OSTI]

The electrochemical behavior of ZnTe and CdTe compound semiconductors dissolved in molten ZnCl[subscript 2] and equimolar CdCl[subscript 2]–KCl, respectively, was examined. In these melts dissolved Te is present as the ...

Osswald, Sebastian

22

Semitransparent ultrathin CdTe solar cells Semitransparent ultrathin CdTe solar cells and durabilityand durability  

E-Print Network [OSTI]

Semitransparent ultrathin CdTe solar cells Semitransparent ultrathin CdTe solar cells core technology is built around · sputter deposition · CdS/CdTe cell structure · Extensive IPTe cellsultrathin CdTe cells X26 stateoftheart compared with other CdTe deposition: [X26 technology has been

Rollins, Andrew M.

23

Response of Cds/CdTe Devices to Te Exposure of Back Contact: Preprint  

SciTech Connect (OSTI)

Theoretical predictions of thin-film CdS/CdTe photovoltaic (PV) devices have suggested performance may be improved by reducing recombination due to Te-vacancy (VTe) or Te-interstitial (Tei) defects. Although formation of these intrinsic defects is likely influenced by CdTe deposition parameters, it also may be coupled to formation of beneficial cadmium vacancy (VCd) defects. If this is true, reducing potential effects of VTe or Tei may be difficult without also reducing the density of VCd. In contrast, post-deposition processes can sometimes afford a greater degree of defect control. Here we explore a post-deposition process that appears to influence the Te-related defects in polycrystalline CdTe. Specifically, we have exposed the CdTe surface to Te prior to ZnTe:Cu/Ti contact-interface formation with the goal of reducing VTe but without significantly reducing VCd. Initial results show that when this modified contact is used on a CdCl2-treated CdS/CdTe device, significantly poorer device performance results. This suggests two things: First, the amount of free-Te available during contact formation (either from chemical etching or CuTe or ZnTe deposition) may be a more important parameter to device performance than previously appreciated. Second, if processes have been used to reduce the effect of VTe (e.g., oxygen and chlorine additions to the CdTe), adding even a small amount of Te may produce detrimental defects.

Gessert, T. A.; Burst, J. M.; Ma, J.; Wei, S. H.; Kuciauskas, D.; Barnes, T. M.; Duenow, J. N.; Young, M. R.; Rance, W. L.; Li, J. V.; Dippo, P.

2012-06-01T23:59:59.000Z

24

High performance Zintl phase TE materials with embedded nanoparticles...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

performance Zintl phase TE materials with embedded nanoparticles High performance Zintl phase TE materials with embedded nanoparticles Performance of zintl phase thermoelectric...

25

CdSxTe1-x Alloying in CdS/CdTe Solar Cells  

SciTech Connect (OSTI)

A CdS{sub x}Te{sub 1-x} layer forms by interdiffusion of CdS and CdTe during the fabrication of thin film CdTe photovoltaic (PV) devices. The CdS{sub x}Te{sub 1-x} layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work has indicated that the electrical junction is located in this interdiffused CdS{sub x}Te{sub 1-x} region. Further understanding, however, is essential to predict the role of this CdS{sub x}Te{sub 1-x} layer in the operation of CdS/CdTe devices. In this study, CdS{sub x}Te{sub 1-x} alloy films were deposited by radio-frequency magnetron sputtering and coevaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and coevaporated CdS{sub x}Te{sub 1-x} films of lower S content (x < 0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl{sub 2} heat treatment at {approx}400 C for 5 min. Films sputtered in a 1% O{sub 2}/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl{sub 2} heat treatment. Films sputtered in O{sub 2} partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously for sputtered oxygenated CdS (CdS:O) films.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-01-01T23:59:59.000Z

26

Energy loss rate of a charged particle in HgTe/(HgTe, CdTe) quantum wells  

SciTech Connect (OSTI)

The energy loss rate (ELR) of a charged particle in a HgTe/(HgTe, CdTe) quantum well is investigated. We consider scattering of a charged particle by the bulk insulating states in this type of topological insulator. It is found that the ELR characteristics due to the intraband excitation have a linear energy dependence while those due to interband excitation depend on the energy exponentially. An interesting quantitative result is that for a large range of the incident energy, the mean inelastic scattering rate is around a few terahertz.

Chen, Qinjun; Sin Ang, Yee [School of Physics, University of Wollongong, New South Wales 2522 (Australia)] [School of Physics, University of Wollongong, New South Wales 2522 (Australia); Wang, Xiaolin [Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522 (Australia)] [Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522 (Australia); Lewis, R. A.; Zhang, Chao [School of Physics, University of Wollongong, New South Wales 2522 (Australia) [School of Physics, University of Wollongong, New South Wales 2522 (Australia); Institute for Superconducting and Electronic Materials, University of Wollongong, New South Wales 2522 (Australia)

2013-11-04T23:59:59.000Z

27

Recycling of CdTe photovoltaic waste  

DOE Patents [OSTI]

A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base.

Goozner, Robert E. (Charlotte, NC); Long, Mark O. (Charlotte, NC); Drinkard, Jr., William F. (Charlotte, NC)

1999-04-27T23:59:59.000Z

28

Infrared spectroscopy of lattice vibrations in ZnTe/CdTe superlattices with quantum dots on the GaAs substrate with the ZnTe buffer layer  

SciTech Connect (OSTI)

The results of the analysis of the infrared lattice reflectance spectra of multiperiod ZnTe/CdTe superlattices with CdTe quantum dots are reported. The samples are grown by molecular beam epitaxy on the GaAs substrate with the ZnTe buffer layer. Due to the large number of periods of the superlattices, it is possible to observe CdTe-like vibration modes in the quantum dots, i.e., the dislocation-free stressed islands formed during the growth due to relaxation of elastic stresses between the ZnTe and CdTe layers are markedly different in their lattice parameters. From the frequency shifts of the CdTe- and ZnTe-like vibration modes with respect to the corresponding modes in the unstressed materials, it is possible to estimate the level of elastic stresses.

Kozyrev, S. P. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)], E-mail: skozyrev@sci.lebedev.ru

2009-03-15T23:59:59.000Z

29

Formation and optical properties of CdTe/ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates  

SciTech Connect (OSTI)

Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to investigate the formation and the optical properties of CdTe/ZnTe nanostructures with various CdTe thicknesses grown on Si (100) substrates by using molecular beam epitaxy and atomic layer epitaxy. AFM images showed that uniform CdTe/ZnTe quantum dots with a CdTe layer thickness of 2.5 ML (monolayer) were formed on Si (100) substrates. The excitonic peaks corresponding to transitions from the ground electronic subband to the ground heavy-hole band in the CdTe/ZnTe nanostructures shifted to a lower energy with increasing thickness of the CdTe layer. The activation energies of the carriers confined in the CdTe/ZnTe nanostructures grown on Si (100) substrates were obtained from the temperature-dependent PL spectra. The present observations can help improve understanding of the formation and the optical properties in CdTe/ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates.

Lee, H. S.; Park, H. L.; Lee, I.; Kim, T. W. [Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of)

2007-11-15T23:59:59.000Z

30

Growth and optical properties of CdTe quantum dots in ZnTe nanowires  

SciTech Connect (OSTI)

We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz [Institute of Physics, Polish Academy of Sciences, Al Lotnikow 32/46, 02-668 Warsaw (Poland); Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland)

2011-09-12T23:59:59.000Z

31

Charge transfer in liquid semiconductors: The K-Te system  

Science Journals Connector (OSTI)

The neutron diffraction patterns of molten KxTe1-x alloys for x=0.12 and x-0.50 demonstrate the persistence of covalently bonded tellurium in the liquid. In the case of liquid K0.12Te0.88, the measured structure is domianted by the Te-Te contribution, and is remarkably similar to that of pure liquid tellurium. The equiatomic alloy K0.50Te0.50 is shown to contain mostly Te pairs which are identified with Zintl ions, Te22-. The presence of these ions explains the semiconducting behavior of these alloys deduced from recent electrical transport measurements.

J. Fortner, Marie-Louise Saboungi, and J. E. Enderby

1992-08-31T23:59:59.000Z

32

Phonon blocking by two dimensional electron gas in polar CdTe/PbTe heterojunctions  

SciTech Connect (OSTI)

Narrow-gap lead telluride crystal is an important thermoelectric and mid-infrared material in which phonon functionality is a critical issue to be explored. In this Letter, efficient phonon blockage by forming a polar CdTe/PbTe heterojunction is explicitly observed by Raman scattering. The unique phonon screening effect can be interpreted by recent discovery of high-density two dimensional electrons at the polar CdTe/PbTe(111) interface which paves a way for design and fabrication of thermoelectric devices.

Zhang, Bingpo; Cai, Chunfeng; Zhu, He; Wu, Feifei; Ye, Zhenyu; Chen, Yongyue; Li, Ruifeng; Kong, Weiguang; Wu, Huizhen, E-mail: hzwu@zju.edu.cn [Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027 (China)

2014-04-21T23:59:59.000Z

33

ZnTe: Gibbs free energy  

Science Journals Connector (OSTI)

This document is part of Volume 44 ‘Semiconductors’, Subvolume B ‘New Data and Updates for II-VI Compounds’ of Landolt-Börnstein Group III ‘Condensed Matter’. It contains data on ZnTe (zinc telluride), Element...

J. Gutowski; K. Sebald; T. Voss

2009-01-01T23:59:59.000Z

34

Facultad de Ciencias Departamento de Fsica Te  

E-Print Network [OSTI]

Facultad de Ciencias Departamento de Fâ??�sica Te â?? orica Jet production in charged current deep Ciencias Fâ??�sicas'' by M â?? onica Luisa V â?? azquez Acosta Director : Juan Terr â?? on Cuadrado 16/12/2002 #12; #12; Facultad de Ciencias Departamento de Fâ??�sica Te â?? orica Producci â?? on de chorros hadr â?? onicos en

35

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

36

CdTe AND CdTe : Hg ALLOYS CRYSTAL GROWTH USING STOICHIOMETRIC AND OFF-STOICHIOMETRIC  

E-Print Network [OSTI]

123 CdTe AND CdTe : Hg ALLOYS CRYSTAL GROWTH USING STOICHIOMETRIC AND OFF-STOICHIOMETRIC ZONE.-Briand, 92190 Meudon/Bellevue, France Résumé. 2014 En vue de la croissance de cristaux de CdTe de haute cristaux semi-isolants Cd0, 9Hg0, 1Te. Abstract. 2014 Some aspects of the thermodynamic state of CdTe

Paris-Sud XI, Université de

37

Prospects for Electroweakino Discovery at a 100 TeV Hadron Collider  

E-Print Network [OSTI]

We investigate the prospects of discovering split Supersymmetry at a future 100 TeV proton-proton collider through the direct production of electroweakino next-to-lightest-supersymmetric-particles (NLSPs). We focus on signatures with multi-lepton and missing energy: $3\\ell$, opposite-sign dileptons and same-sign dileptons. We perform a comprehensive study of different electroweakino spectra. A 100 TeV collider with 3000/fb data is expected to exclude Higgsino thermal dark matter candidates with $m_{\\rm{LSP}}\\sim 1 $ TeV if Wino NLSPs are lighter than about 3.2 TeV. The $3\\ell$ search usually offers the highest mass reach, which varies in the range of (2-4) TeV depending on scenarios. In particular, scenarios with light Higgsinos have generically simplified parameter dependences. We also demonstrate that, at a 100 TeV collider, lepton collimation becomes a crucial issue for NLSPs heavier than about 2.5 TeV. We finally compare our results with the discovery prospects of gluino pair productions and deduce which ...

Gori, Stefania; Wang, Lian-Tao; Wells, James D

2014-01-01T23:59:59.000Z

38

Prospects for Electroweakino Discovery at a 100 TeV Hadron Collider  

E-Print Network [OSTI]

We investigate the prospects of discovering split Supersymmetry at a future 100 TeV proton-proton collider through the direct production of electroweakino next-to-lightest-supersymmetric-particles (NLSPs). We focus on signatures with multi-lepton and missing energy: $3\\ell$, opposite-sign dileptons and same-sign dileptons. We perform a comprehensive study of different electroweakino spectra. A 100 TeV collider with 3000/fb data is expected to exclude Higgsino thermal dark matter candidates with $m_{\\rm{LSP}}\\sim 1 $ TeV if Wino NLSPs are lighter than about 3.2 TeV. The $3\\ell$ search usually offers the highest mass reach, which varies in the range of (2-4) TeV depending on scenarios. In particular, scenarios with light Higgsinos have generically simplified parameter dependences. We also demonstrate that, at a 100 TeV collider, lepton collimation becomes a crucial issue for NLSPs heavier than about 2.5 TeV. We finally compare our results with the discovery prospects of gluino pair productions and deduce which SUSY breaking model can be discovered first by electroweakino searches.

Stefania Gori; Sunghoon Jung; Lian-Tao Wang; James D. Wells

2014-10-23T23:59:59.000Z

39

Average resonance capture study of Te124  

Science Journals Connector (OSTI)

An average resonance capture study of Te124 was carried out by bombarding samples of Te123 with 2- and 24-keV neutron beams. The complete set of 0+, 1+, 2+ states disclosed by the experiment is consistent with the data of Robinson, Hamilton, and Snelling, demonstrating that there are no undetected states of these spins (especially 0+ states) below about 2500 keV. In particular, proposed 0+ levels at 1156 and 1290 keV are ruled out. This impacts various attempted interpretations in terms of intruder states, U(5), and O(6) symmetries.

R. F. Casten; J.-Y. Zhang; B.-C. Liao

1991-07-01T23:59:59.000Z

40

THE DEFECT STRUCTURE OF CdTe (*) F. A. KRGER  

E-Print Network [OSTI]

THE DEFECT STRUCTURE OF CdTe (*) F. A. KR�GER David Packard Professor of Electrical Engineering haute résistivité. Abstract. 2014 Evidence concerning the defect structure of CdTe is reviewed

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "te rm te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

PRESENT LIMITATIONS OF CdTe DETECTORS IN NUCLEAR MEDICINE  

E-Print Network [OSTI]

365 PRESENT LIMITATIONS OF CdTe DETECTORS IN NUCLEAR MEDICINE R. ALLEMAND, P. BOUTEILLER, M. LAVAL quality criteria, it is necessary to compare Cd-Te detectors results (or estimated characteristics) with other methods (i. e. 8cintillation cameras) in order to know the effective interest of Cd-Te in nuclear

Boyer, Edmond

42

Hybrid functional calculations of a Te antisite in bulk CdTe.  

E-Print Network [OSTI]

?? The detection of gamma-rays is an important issue in a cast array ofindustries. CdTe is a semiconductor used for gamma-ray detectors whichcan operate at… (more)

Árdal, Kristinn Björgvin

2013-01-01T23:59:59.000Z

43

Excited states of acceptors in CdTe and ZnTe  

Science Journals Connector (OSTI)

Higher excited states of acceptors in CdTe and ZnTe are obtained by using the Baldereschi and Lipari spherical model including the cubic correction and the central-cell effect. This is done by solving the coupled radial equations by the finite-element method with Arnoldi's algorithm, which gives several (?20) low-lying states simultaneously. Our procedure allows one to determine very accurately the host band-structure parameters. In the case of CdTe we obtain the Luttinger parameters ?1 = 5.30, ?2 = 1.62, ?3 = 2.10 and the dielectric constant ?0 = 9.3. For ZnTe we obtain ?1 = 3.80, ?2 = 0.86, ?3 = 1.32 and ?0 = 9.4.

M. Said; M.A. Kanehisa

1990-01-01T23:59:59.000Z

44

The PeTroleum InsTITuTe Annual report 2009 The PeTroleum InsTITuTe  

E-Print Network [OSTI]

The PeTroleum InsTITuTe Annual report 2009 The PeTroleum InsTITuTe Annual report - 2009 online version #12;The PeTroleum InsTITuTe Annual report 2009 #12;The PeTroleum InsTITuTe Annual report 2009 overvIew Annual Report 2009 THE PETROLEUM INSTITUTE Office of the President 4 OFFICE OF THE PRESIDENT DR

45

Influence of CdTe thickness on structural and electrical properties of CdTe/CdS solar cells  

E-Print Network [OSTI]

Influence of CdTe thickness on structural and electrical properties of CdTe/CdS solar cells A a b s t r a c ta r t i c l e i n f o Available online xxxx Keywords: Solar cells CdCl2 CdTe Thin absorbers Due to its high scalability and low production cost, CdTe solar cells have shown a very strong

Romeo, Alessandro

46

Typesetting Posters withTypesetting Posters with LaTeXLaTeX  

E-Print Network [OSTI]

Typesetting Posters withTypesetting Posters with LaTeXLaTeX:: A Practical GuideA Practical Guide?What is the Problem? ·· Posters are used to present technicalPosters are used to present technical material at some conferencesmaterial at some conferences ­­ In some cases these posters may be very largeIn some cases these posters

Stephenson, Ben

47

Mechanism of terahertz photoconductivity in semimetallic HgTe/CdHgTe quantum wells  

SciTech Connect (OSTI)

Terahertz photoconductivity in magnetic fields in semimetallic HgTe/CdHgTe quantum wells has been studied. The main contribution to photoconductivity comes from a signal that appears as a result of electron-gas heating. It is shown that, with the cyclotron resonance conditions satisfied, the photoconductivity signal is composed of cyclotron-resonance and bolometric components. However, in this case too, the bolometric contribution predominates.

Vasilyev, Yu. B., E-mail: yu.vasilyev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Mikhailov, N. N. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Gouider, F. [Institut fuer Angewandte Physik (Germany); Vasilyeva, G. Yu. [St. Petersburg State Polytechnic University (Russian Federation); Nachtwei, G. [Institut fuer Angewandte Physik (Germany)

2012-05-15T23:59:59.000Z

48

COMPARISON OF CSS-CdTe AND PVD-CdTe WITH DIFFERENT ACTIVATION PROCESSES , G. Khrypunov2,4  

E-Print Network [OSTI]

University, Leicestershire, LE11 3TU, UK ABSTRACT: CdTe polycrystalline thin film solar cells have a strong AM1.5 illumination. Amongst several attractive features high chemical stability of CdTe and a simple simplification has been done by substituting the CdCl2 step by treating CdTe films in an atmosphere containing

Romeo, Alessandro

49

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network [OSTI]

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells Company has had a conti- nuous effort on thin film solar cells for the past four and a half years

Paris-Sud XI, Université de

50

First-principles study of the electronic and structural properties of (CdTe)n/(ZnTe)n superlattices  

Science Journals Connector (OSTI)

Abstract We present the results of a first-principles study of the electronic and structural properties of binary CdTe and ZnTe compounds and their (CdTe)n/(ZnTe)n superlattices (SLs). The computational method is based on the full-potential linear muffin tin orbitals method (FP-LMTO) augmented by a plane-wave basis (PLW). The exchange and correlation energy is described in the local density approximation (LDA) using the Perdew–Wang parameterization including a generalized gradient approximation (GGA). The calculated structural properties of CdTe and ZnTe compounds are in good agreement with available experimental and theoretical data. We have also carried out band-structure calculations for the binary CdTe and ZnTe compounds and their (CdTe)n/(ZnTe)n superlattices (SLs). From the results of the electronic properties, we find that the parent material CdTe and ZnTe and their superlattices have a direct band gaps. The fundamental band gap decreases with increasing the number of monolayer n.

M. Boucharef; S. Benalia; D. Rached; M. Merabet; L. Djoudi; B. Abidri; N. Benkhettou

2014-01-01T23:59:59.000Z

51

Luminescence Enhancement of CdTe Nanostructures in LaF3:Ce/CdTe Nanocomposites  

SciTech Connect (OSTI)

Radiation detection demands new scintillators with high quantum efficiency, high energy resolution and short luminescence lifetimes. Nanocomposites consisting of quantum dots and Ce3+ doped nanophosphors may be able to meet these requirements. Here we report the luminescence of LaF3:Ce/CdTe nanocomposites which were synthesized by a wet chemistry method. In LaF3:Ce/CdTe nanocomposites the CdTe quantum dots are converted into nanowires, while in LaF3/CdTe nanocomposites no such conversion is observed. The CdTe luminescence in LaF3:Ce/CdTe nanocomposites is enhanced about 5 times, while in LaF3/CdTe nanocomposites no enhancement was observed. Energy transfer, light-re-absorption and surface passivation are likely the reasons for the luminescence enhancement.

Yao, Mingzhen; Zhang, Xing; Ma, Lun; Chen, Wei; Joly, Alan G.; Huang, Jinsong; Wang, Qingwu

2010-11-15T23:59:59.000Z

52

New chalcogenide glasses in the CdTe-AgI-As{sub 2}Te{sub 3} system  

SciTech Connect (OSTI)

Highlights: Black-Right-Pointing-Pointer Determination of the glass-forming region in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system. Black-Right-Pointing-Pointer Characterization of macroscopic properties of the new CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Characterization of the total conductivity of CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI-As{sub 2}Te{sub 3} glasses towards crystallisation is estimated to be decreasing on the base of {Delta}T = T{sub x} - T{sub g} parameter. The total electrical conductivity {sigma} was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI){sub 0.5}(As{sub 2}Te{sub 3}){sub 0.5} host glass, (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Te{sub 3}){sub 0.5-x/2} lead to a conductivity decrease at x {<=} 0.05. Then, the behaviour is reversed at 0.05 {<=} x {<=} 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

Kassem, M. [Univ. Picardie Jules Verne, F-80000 Amiens (France)] [Univ. Picardie Jules Verne, F-80000 Amiens (France); Le Coq, D., E-mail: david.lecoq@univ-littoral.fr [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France); Boidin, R.; Bychkov, E. [Univ. Lille Nord de France, F-59000 Lille (France) [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France)

2012-02-15T23:59:59.000Z

53

Relations between structural parameters and physical properties in CdTe and Cd0.96Zn0.04Te alloys  

E-Print Network [OSTI]

481 Relations between structural parameters and physical properties in CdTe and Cd0.96Zn0.04Te cristaux de CdTe et de Cd0,96Zn0,04Te, de densité de dislocations variant entre 5 x 104 et 6 x 105 cm-2. La and photoluminescence experiments were performed on several CdTe and Cd0.96Zn0.04Te crystals with dislocation density

Paris-Sud XI, Université de

54

Characterization of CdZnTe ambient temperature detectors  

SciTech Connect (OSTI)

A great deal of interest has been generated in the use of cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) detectors for ambient temperature detection of radionuclides. The addition of zinc to CdTe provides several benefits that enhance the materials operational characteristics at ambient temperature. Recent movement in the industry is to produce larger volume detectors using CdZnTe without much known about the effects of larger geometry on performance. The purpose of this study is to get an idea of the relationship of detector performance to both area and thickness variations.

Lavietes, A.

1994-09-01T23:59:59.000Z

55

High Performance Zintl Phase TE Materials with Embedded Particles...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

TE Materials with Embedded Particles Presents results from embedding nanoparticles in magnesium silicide alloy matrix reducing thermal conductivity by phonon scattering and...

56

A Search for Neutrinoless Double Beta Decay of Te-130.  

E-Print Network [OSTI]

??This dissertation describes an experimental search for neutrinoless double beta (0???) decay of 130Te. An observation of 0??? decay would establish that neutrinos are Majorana… (more)

Bryant, Adam Douglas

2010-01-01T23:59:59.000Z

57

Effect of Manganese Concentration in the Cd1-xMnxTe/CdTe Tandem Structure on Photovoltaic Energy Conversion  

Science Journals Connector (OSTI)

Abstract The photovoltaic electricity is obtained by direct conversion of sunlight into electricity by solar cells. The objective of this work is the study and simulation of a Tandem photovoltaic structure based on Cd1-xMnxTe as top material cell. This paper describes the optimization of energy efficiency for Cd1-xMnxTe thin films deposited by epitaxy on CdTe substrat. We present the impact of the manganese concentration in Cd1-xMnxTe thin films on solar cells performances. Our study includes simulation results to show the conversion efficiency and main performances factors as function of the manganese concentration.

A. Aissat; M. El Bey; M. Fathi; J.P. Vilcot

2013-01-01T23:59:59.000Z

58

Atomistic simulation of CdTe solid-liquid coexistence equilibria...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

simulation of CdTe solid-liquid coexistence equilibria. Atomistic simulation of CdTe solid-liquid coexistence equilibria. Abstract: Atomistic simulations of CdTe using a...

59

Strain relaxation of CdTe films growing on lattice-mismatched substrates  

E-Print Network [OSTI]

gap approaches the value of bulk CdTe crystals. This makesbulk crystals with crystalline CdTe ?lms for the purpose ofthe top layer of thick CdTe ?lms grown on Si(001) substrate

Ma, Zhixun; Yu, Kin Man; Walukiewicz, Wladek; Yu, Peter Y.; Mao, Samuel S.

2009-01-01T23:59:59.000Z

60

Mechanical and Electrical Properties of CdTe Tetrapods Studied by Atomic Force Microscopy  

E-Print Network [OSTI]

Electrical Properties of CdTe Tetrapods Studied by Atomicelectrical properties of CdTe tetrapod-shaped nanocrystalsIntroduction CdSe and CdTe nanocrystals possess interesting

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "te rm te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

E-Print Network 3.0 - amorphous ge-sb-te films Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

times in GeSbTe films irradiated... commercial phase-change optical recording systems, such as those based on GeSbTe Ref. 3 or AglnSbTe,4 use... the crystalline and...

62

Interfacial Reaction Between Nb Foil and n-Type PbTe Thermoelectric Materials During Thermoelectric Contact Fabrication  

Science Journals Connector (OSTI)

PbTe is a high-conversion-efficiency thermoelectric (TE) material that is commonly used in space exploration applications. Integration of PbTe in TE devices has a significant impact on the conversion efficienc...

Haiyang Xia; Cheng-Lung Chen; Fivos Drymiotis; Aiping Wu…

2014-11-01T23:59:59.000Z

63

CdS/CdTe Solar Cells Containing Directly-Deposited CdSxTe1-x Alloy Layers  

SciTech Connect (OSTI)

A CdS{sub x}Te{sub 1-x} layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdS{sub x}Te{sub 1-x} layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdS{sub x}Te{sub 1-x} region. Further understanding, however, is essential to predict the role of this CdS{sub x}Te{sub 1-x} layer in the operation of CdS/CdTe devices. In this study, CdS{sub x}Te{sub 1-x} alloy films were deposited by radio-frequency (RF) magnetron sputtering and co-evaporation from CdTe and CdS sources. Both RF-magnetron-sputtered and co-evaporated CdS{sub x}Te{sub 1-x} films of lower S content (x<;0.3) have a cubic zincblende (ZB) structure akin to CdTe, whereas those of higher S content have a hexagonal wurtzite (WZ) structure like that of CdS. Films become less preferentially oriented as a result of a CdCl{sub 2} heat treatment (HT) at {approx}400 C for 5 min. Films sputtered in a 1% O{sub 2}/Ar ambient are amorphous as deposited, but show CdTe ZB, CdS WZ, and CdTe oxide phases after a CdCl{sub 2} HT. Films sputtered in O{sub 2} partial pressure have a much wider bandgap than expected. This may be explained by nanocrystalline size effects seen previously [2] for sputtered oxygenated CdS (CdS:O) films. Initial PV device results show that the introduction of a directly-deposited CdS{sub x}Te{sub 1-x} alloy layer into the device structure produces devices of comparable performance to those without the alloy layer when a CdCl{sub 2} HT is performed. Further investigation is required to determine whether the CdCl{sub 2} heat treatment step can be altered or eliminated through direct deposition of the alloy layer.

Duenow, J. N.; Dhere, R. G.; Moutinho, H. R.; To, B.; Pankow, J. W.; Kuciauskas, D.; Gessert, T. A.

2011-01-01T23:59:59.000Z

64

NONLINEAR OPTICAL EFFECTS IN ROTATIONALLY-TWINNED CRYSTALS: AN EVALUATION OF CdTe, ZnTe AND ZnSe  

E-Print Network [OSTI]

405 NONLINEAR OPTICAL EFFECTS IN ROTATIONALLY-TWINNED CRYSTALS: AN EVALUATION OF CdTe, ZnTe AND Zn une loi en N2. On discutera les avantages potentiels en optique non linéaire des cristaux de CdTe, Zn-spaced twin planes the enhancement is proportional to N2. A comparison is made between CdTe, ZnTe, and Zn

Boyer, Edmond

65

The Spectral Break Near TeV of $e^\\pm$ Cosmic Rays - Standard Physics or Dark Matter Origin?  

E-Print Network [OSTI]

The complex spectra of high energy ${\\rm e^\\pm}$ cosmic rays (CRs) observed near Earth are those expected from standard model physics. In particular, the observed hardening of their spectra with increasing energy reported by the AMS-02 collaboration can be produced by the transition of their energy-loss by inverse Compton scattering off Galactic light from the Thomson to the Klein-Nishina regime. The "cut-off" near TeV in the combined ${\\rm e^\\pm}$ flux observed with H.E.S.S can be due to pair production in ${\\rm e^\\pm}\\gamma$ collisions in source rather than a bump produced by the decay/annihilation of dark matter particles with a mass of $\\sim$TeV. Beyond this "cutoff", the $e^\\pm$ CRs are mostly produced by the decay of mesons from hadronic collisions of CR protons in/near source with a positron fraction $\\sim 0.57$.

Dado, Shlomo

2015-01-01T23:59:59.000Z

66

TE Link Dormant Mode Used in GMPLS Optical Transport Networks for Energy Saving  

Science Journals Connector (OSTI)

This paper evaluates power efficiency of TE link dormant mode in optical transport network, considering daily traffic variability and GMPLS protocol. The proposed TE link dormant mode...

Li, Xin; Huang, Shanguo; Guo, Bingli; Zhang, Jie; Gu, Wanyi

67

Laser irradiation effects on the CdTe/ZnTe quantum dot structure studied by Raman and AFM spectroscopy  

SciTech Connect (OSTI)

Micro-Raman spectroscopy has been applied to investigate the impact of laser irradiation on semiconducting CdTe/ZnTe quantum dots (QDs) structures. A reference sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the p-type GaAs substrate. The Raman spectra have been recorded for different time of a laser exposure and for various laser powers. The spectra for both samples exhibit peak related to the localized longitudinal (LO) ZnTe phonon of a wavenumber equal to 210 cm{sup -1}. For the QD sample, a broad band corresponding to the LO CdTe phonon related to the QD-layer appears at a wavenumber of 160 cm{sup -1}. With increasing time of a laser beam exposure and laser power, the spectra get dominated by tellurium-related peaks appearing at wavenumbers around 120 cm{sup -1} and 140 cm{sup -1}. Simultaneously, the ZnTe surface undergoes rising damage, with the formation of Te aggregates at the pinhole edge as reveal atomic force microscopy observations. Local temperature of irradiated region has been estimated from the anti-Stokes/Stokes ratio of the Te modes intensity and it was found to be close or exceeding ZnTe melting point. Thus, the laser damage can be explained by the ablation process.

Zielony, E.; Placzek-Popko, E.; Henrykowski, A.; Gumienny, Z.; Kamyczek, P.; Jacak, J. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Nowakowski, P.; Karczewski, G. [Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw (Poland)

2012-09-15T23:59:59.000Z

68

Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films  

DOE Patents [OSTI]

A method of is disclosed improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurium-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact. 11 figs.

Gessert, T.A.

1999-06-01T23:59:59.000Z

69

Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films  

DOE Patents [OSTI]

A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

Gessert, Timothy A. (Conifer, CO)

1999-01-01T23:59:59.000Z

70

Real-time observation of nanoscale topological transitions in epitaxial PbTe/CdTe heterostructures  

SciTech Connect (OSTI)

The almost completely immiscible PbTe/CdTe heterostructure has recently become a prototype system for self-organized quantum dot formation based on solid-state phase separation. Here, we study by real-time transmission electron microscopy the topological transformations of two-dimensional PbTe-epilayers into, first, a quasi-one-dimensional percolation network and subsequently into zero-dimensional quantum dots. Finally, the dot size distribution coarsens by Ostwald ripening. The whole transformation sequence occurs during all stages in the fully coherent solid state by bulk diffusion. A model based on the numerical solution of the Cahn-Hilliard equation reproduces all relevant morphological and dynamic aspects of the experiments, demonstrating that this standard continuum approach applies to coherent solids down to nanometer dimensions. As the Cahn-Hilliard equation does not depend on atomistic details, the observed morphological transformations are general features of the model. To confirm the topological nature of the observed shape transitions, we developed a parameter-free geometric model. This, together with the Cahn-Hilliard approach, is in qualitative agreement with the experiments.

Groiss, H., E-mail: heiko.groiss@jku.at, E-mail: istvan.daruka@jku.at; Daruka, I., E-mail: heiko.groiss@jku.at, E-mail: istvan.daruka@jku.at; Springholz, G.; Schäffler, F. [Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz 4040 (Austria); Koike, K.; Yano, M. [Nanomaterials Microdevices Research Center, Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585 (Japan); Hesser, G. [Center for Surface- and Nanoanalytics (ZONA), Johannes Kepler University, Linz 4040 (Austria); Zakharov, N.; Werner, P. [Max Planck Institute of Microstructure Physics, Halle 06120 (Germany)

2014-01-01T23:59:59.000Z

71

Process Development for High Voc CdTe Solar Cells  

SciTech Connect (OSTI)

This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

Ferekides, C. S.; Morel, D. L.

2011-05-01T23:59:59.000Z

72

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te  

E-Print Network [OSTI]

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te alloys: Density functional functional simulations, Ge/Sb/Te alloys. Corresponding author: e-mail r.jones@fz-juelich.de, Phone: +49 discussed the alloy As30Ge10Si12Te48, and Te-based alloys have been well represented ever since. Alloys

73

Paul Sellin, Radiation Imaging Group The role of defects on CdTe detector performance  

E-Print Network [OSTI]

Paul Sellin, Radiation Imaging Group The role of defects on CdTe detector performance P.J. Sellin1-destructive material characterisation techniques have been applied to CdTe wafers grown by the Travelling Heater Method Imaging Group PL mapping of whole CdTe wafers PL ( =819 nm) scan for two CdTe wafers, (left: wafer L700

Sellin, Paul

74

Self-Assembly of CdTe Tetrapods into Network Monolayers at the Air/Water  

E-Print Network [OSTI]

Self-Assembly of CdTe Tetrapods into Network Monolayers at the Air/Water Interface Matthew D present a versatile method for cadmium telluride (CdTe) tetrapod syn- thesis by utilizing multiple Te the tetrapod shape. CdTe tetra- pods are a promising inorganic semicon- ductor for photovoltaic cells due

Lin, Zhiqun

75

Energy measurement of muons above 1 TeV  

Science Journals Connector (OSTI)

Pair production and bremsstrahlung cross-sections have sufficient magnitude and energy-dependence for muons above 1 TeV to suggest the use of these cross-sections for measurement of muon energies. A series of Mon...

M. K. Moe

1970-03-11T23:59:59.000Z

76

Selective Area Epitaxy of CdTe on Nanopatterned Substrates.  

E-Print Network [OSTI]

?? HgCdTe/Si devices can potentially be significantly improved by the use of nanopatterned substrate structures on Si to control point and extended crystal defects. This… (more)

Fahey, Stephen

2013-01-01T23:59:59.000Z

77

Selective Area Epitaxy of CdTe on Nanopatterned Substrates.  

E-Print Network [OSTI]

??HgCdTe/Si devices can potentially be significantly improved by the use of nanopatterned substrate structures on Si to control point and extended crystal defects. This thesis… (more)

Fahey, Stephen D.

2012-01-01T23:59:59.000Z

78

A Search for Neutrinoless Double Beta Decay of Te-130  

E-Print Network [OSTI]

Bolometric experiments for neutrinoless double beta 3.2.1A Search for Neutrinoless Double Beta Decay of Te by AdamSpring 2010 A Search for Neutrinoless Double Beta Decay of

Bryant, Adam Douglas

2010-01-01T23:59:59.000Z

79

INTERACTION OF DEFECTS IN CdTe-CRYSTALS HEAVILY DOPED WITH CHLORINE  

E-Print Network [OSTI]

ClTe) and (VCd 2 ClTe)] form, but larger clusters as well. Thus, the compensation process in Cl doped CdTe, PAGE In order to clarify the mechanism of compensation in semi-insulating crystals of CdTe doped.1051/rphysap:01977001202023500 #12;236 FIG. 1. - Photoluminescence spectra of In and Cl doped CdTe. ND = 10 17

Paris-Sud XI, Université de

80

REVUE DE PHYSIQUE APPLIQUE PHASE DIAGRAM CALCULATION IN THE Te-Bi-Sb TERNARY SYSTEM  

E-Print Network [OSTI]

by the stoichio- metric compounds Bi2Te3-Sb2Te3 and SnTe-PbTe [16, 17] exhibit complete miscibility in both liquid 1976) Résumé. 2014 On calcule le diagramme de l'équilibre liquide-solide dans le système ternaire Te be achieved either by means of time- and labor-consuming measurements which permit plotting the equilibrium

Boyer, Edmond

Note: This page contains sample records for the topic "te rm te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Electrical characteristics of the CdTe-n-CdHgTe structure fabricated in a single molecular-beam epitaxy process  

SciTech Connect (OSTI)

An extraordinary shape of the capacitance-voltage characteristics of CdTe-CdHgTe structures has been detected; these characteristics include a specific 'hump' in the inversion region, the height of which increased severalfold under illumination. Additional measurements using an optical probe, measurements of current-voltage characteristics, and an analysis of the energy-band diagram of the structure showed the following. CdTe, in contrast to CdHgTe, is a p-type semiconductor with an acceptor concentration of 1 x 10{sup 16} cm{sup -3}; there is a hole inversion layer in CdHgTe at the boundary with CdTe, which causes the 'hump'; and the barrier height for holes at the CdTe-Cd{sub 0.43}Hg{sub 0.57}Te interface was determined as 0.13 eV.

Mashukov, Yu. P., E-mail: dr_mashukov@mail.ru; Mikhailov, N. N.; Vasilyev, V. V. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2010-09-15T23:59:59.000Z

82

Phonon self-energy and origin of anomalous neutron scattering spectra in SnTe and PbTe thermoelectrics  

SciTech Connect (OSTI)

The anharmonic lattice dynamics of rock-salt thermoelectric compounds SnTe and PbTe are investigated with inelastic neutron scattering (INS) and first-principles calculations. The experiments show that, surprisingly, although SnTe is closer to the ferroelectric instability, phonon spectra in PbTe exhibit a more anharmonic character. This behavior is reproduced in first-principles calculations of the temperature-dependent phonon self-energy. Our simulations reveal how the nesting of phonon dispersions induces prominent features in the self-energy, which account for the measured INS spectra and their temperature dependence. We establish that the phase-space for three-phonon scattering processes, rather than just the proximity to the lattice instability, is the mechanism determining the complex spectrum of the transverse-optical ferroelectric mode.

Li, Chen [ORNL] [ORNL; Ma, Jie [ORNL] [ORNL; May, Andrew F [ORNL] [ORNL; Cao, Huibo [ORNL] [ORNL; Christianson, Andrew D [ORNL] [ORNL; Ehlers, Georg [ORNL] [ORNL; Singh, David J [ORNL] [ORNL; Sales, Brian C [ORNL] [ORNL; Delaire, Olivier A [ORNL] [ORNL

2014-01-01T23:59:59.000Z

83

A 3 TeV on 3 TeV proton-proton dedicated collider for Fermilab  

SciTech Connect (OSTI)

The Fermilab Dedicated Collider proposed in May 1983 is a 2 TeV on 2 TeV p)bar p) collider. The expected luminosity is )approximately) 10/sup 31/ cm/sup (minus/2)sec/sup )minus/1) and the estimated cost is )approximately) $362M (FY-83 dollars). Since 1983 both the superconducting magnet and the particle detector technologies have advanced and the countenance of physics, hence the desired characteristics of new facilities have also altered somewhat. We want to show here that with the new magnet technology used for the SSC one can construct a 3 TeV on 3 TeV pp collider on the Fermilab site. This pp Dedicated Collider )PPDC) will have a luminosity of about 10/sub 33/cm/sup )minus/2)sec)sup)minus)1) and a cost only )approximately) 50)percent) more than that of the p)bar p) Dedicated Collider. 3 figs

Teng, L.C.

1988-03-30T23:59:59.000Z

84

Coulomb interaction of acceptors in Cd{sub 1?x}Mn{sub x}Te/CdTe quantum dot  

SciTech Connect (OSTI)

The investigation on the effect of confining potential like isotropic harmonic oscillator type potential on the binding and the Coulomb interaction energy of the double acceptors in the presence of magnetic field in a Cd{sub 1?x}Mn{sub x}Te/CdTe Spherical Quantum Dot has been made for the Mn ion composition x=0.3 and compared with the results obtained from the square well type potential using variational procedure in the effective mass approximation.

Kalpana, P.; Nithiananthi, P., E-mail: kjkumar-gri@rediffmail.com; Jayakumar, K., E-mail: kjkumar-gri@rediffmail.com [Department of Physics, Gandhigram Rural University, Gandhigram-624302, TamilNadu (India); Reuben, A. Merwyn Jasper D. [Department of Physics, School of Engineering, Saveetha University, Thandalam, Chennai- 600104, TamilNadu (India)

2014-04-24T23:59:59.000Z

85

Effects of Cu Diffusion from ZnTe:Cu/Ti Contacts on Carrier Lifetime of CdS/CdTe Thin Film Solar Cells: Preprint  

SciTech Connect (OSTI)

We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime in the CdTe layer is affected by Cu diffusion from the contact.

Gessert, T. A.; Metzger, W. K.; Asher, S. E.; Young, M. R.; Johnston, S.; Dhere, R. G.; Duda, A.

2008-05-01T23:59:59.000Z

86

Influence of EDTA{sup 2-} on the hydrothermal synthesis of CdTe nanocrystallites  

SciTech Connect (OSTI)

Transformation from Te nanorods to CdTe nanoparticles was achieved with the assistance of EDTA as a ligand under hydrothermal conditions. Experimental results showed that at the beginning of reaction Te nucleated and grew into nanorods. With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Finally, nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were obtained. The effects of EDTA on the morphology and formation of CdTe nanoparticles were discussed in consideration of the strong ligand-effect of EDTA, which greatly decreased the concentration of Cd{sup 2+}. Furthermore, the possible formation process of CdTe nanoparticles from Te nanorods was further proposed. The crystal structure and morphology of the products were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). - Graphical Abstract: Firstly, Te nucleated and grew into nanorods in the presence of EDTA{sup 2-}. Then CdTe nucleus began to emerge on Te nanorods and finally monodispersed CdTe nanoparticles were obtained. Highlights: Black-Right-Pointing-Pointer EDTA serves as a strong ligand with Cd{sup 2+}. Black-Right-Pointing-Pointer The existence of EDTA constrains the nucleation of CdTe and promotes the formation of Te nanorods. Black-Right-Pointing-Pointer With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Black-Right-Pointing-Pointer Nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were finally obtained.

Gong Haibo [Center of Bio and Micro/nano Functional Materials, State Key Lab of Crystal Materials, Shandong University, Jinan 250100 (China); School of Materials Science and Engineering, University of Jinan, Jinan 250022 (China); Hao Xiaopeng, E-mail: xphao@sdu.edu.cn [Center of Bio and Micro/nano Functional Materials, State Key Lab of Crystal Materials, Shandong University, Jinan 250100 (China); Wu Yongzhong [Center of Bio and Micro/nano Functional Materials, State Key Lab of Crystal Materials, Shandong University, Jinan 250100 (China); Cao Bingqiang; Xu Hongyan [School of Materials Science and Engineering, University of Jinan, Jinan 250022 (China); Xu Xiangang [Center of Bio and Micro/nano Functional Materials, State Key Lab of Crystal Materials, Shandong University, Jinan 250100 (China)

2011-12-15T23:59:59.000Z

87

Electrical Characterization of Cu Composition Effects in CdS/CdTe Thin-Film Solar Cells with a ZnTe:Cu Back Contact: Preprint  

SciTech Connect (OSTI)

We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at {approx}0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially increases with Cu concentration then decreases, reflects the interplay between the positive influences and negative influences (increasing deep levels in CdTe) of Cu.

Li, J. V.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Dhere, R. G.; Young, M. R.; Levi, D. H.

2012-07-01T23:59:59.000Z

88

Measurement of electrons from semileptonic heavy-flavor hadron decays in pp collisions at $\\sqrt{s} = 2.76$ TeV  

E-Print Network [OSTI]

The $p_{\\rm T}$-differential production cross section of electrons from semileptonic decays of heavy-flavor hadrons has been measured at mid-rapidity in proton-proton collisions at $\\sqrt{s} = 2.76$ TeV in the transverse momentum range 0.5 calculations agree with the data within the theoretical and experimental uncertainties.

The ALICE Collaboration

2014-05-16T23:59:59.000Z

89

Metallurgy, thermal stability, and failure mode of the commercial Bi-Te-based thermoelectric modules.  

SciTech Connect (OSTI)

Bi-Te-based thermoelectric (TE) alloys are excellent candidates for power generation modules. We are interested in reliable TE modules for long-term use at or below 200 C. It is known that the metallurgical characteristics of TE materials and of interconnect components affect the performance of TE modules. Thus, we have conducted an extensive scientific investigation of several commercial TE modules to determine whether they meet our technical requirements. Our main focus is on the metallurgy and thermal stability of (Bi,Sb){sup 2}(Te,Se){sup 3} TE compounds and of other materials used in TE modules in the temperature range between 25 C and 200 C. Our study confirms the material suite used in the construction of TE modules. The module consists of three major components: AlN cover plates; electrical interconnects; and the TE legs, P-doped (Bi{sub 8}Sb{sub 32})(Te{sub 60}) and N-doped (Bi{sub 37}Sb{sub 3})(Te{sub 56}Se{sub 4}). The interconnect assembly contains Sn (Sb {approx} 1wt%) solder, sandwiched between Cu conductor with Ni diffusion barriers on the outside. Potential failure modes of the TE modules in this temperature range were discovered and analyzed. The results show that the metallurgical characteristics of the alloys used in the P and N legs are stable up to 200 C. However, whole TE modules are thermally unstable at temperatures above 160 C, lower than the nominal melting point of the solder suggested by the manufacture. Two failure modes were observed when they were heated above 160 C: solder melting and flowing out of the interconnect assembly; and solder reacting with the TE leg, causing dimensional swelling of the TE legs. The reaction of the solder with the TE leg occurs as the lack of a nickel diffusion barrier on the side of the TE leg where the displaced solder and/or the preexisting solder beads is directly contact the TE material. This study concludes that the present TE modules are not suitable for long-term use at temperatures above 160 C due to the reactivity between the Sn-solder and the (Bi,Sb){sup 2}(Te,Se){sup 3} TE alloys. In order to deploy a reliable TE power generator for use at or below 200 C, alternate interconnect materials must be used and/or a modified module fabrication technique must be developed.

Yang, Nancy Y. C.; Morales, Alfredo Martin

2009-02-01T23:59:59.000Z

90

Effect of solvents on morphologies of PbTe nanostructures: Controllable synthesis of hollow and solid PbTe nanocubes by a solvothermal method  

SciTech Connect (OSTI)

We demonstrate a facile solvothermal route to grow hollow and solid PbTe nanocubes. The hollow PbTe nanocubes were successfully achieved when EtOH was used as solvent in the presence of nonionic polymer PEG, while the solid PbTe nanocubes were obtained when EG was used as solvent in the presence of PEG, whilst keeping the other experimental conditions constant. The results indicate that the solvents used in reaction system play a key role to determine the interior structure of PbTe nanocubes. On the basis of the experimental results and analysis, a possible growth mechanism has been discussed in detail for the hollow and solid PbTe nanocubes. - Graphical abstract: A facile solution-phase route has been developed to synthesize hollow and solid PbTe nanocubes. The possible growth mechanism of hollow and solid PbTe nanocubes was discussed in detail. Highlights: Black-Right-Pointing-Pointer A facile controllable route was described for hollow and solid PbTe nanocubes. Black-Right-Pointing-Pointer The hollow PbTe nanocubes were achieved using EtOH as solvent. Black-Right-Pointing-Pointer The solid PbTe nanocubes were obtained using EG as solvent. Black-Right-Pointing-Pointer The solvent played a key role for the formation of hollow and solid PbTe nanocubes.

Wang Wenzhong, E-mail: wzhwang@aphy.iphy.ac.cn [School of Science, Minzu University of China, Beijing 100081 (China); Wang Lijuan [School of Science, Minzu University of China, Beijing 100081 (China); Zhou Qing [College of Science, Guizhou University, Guiyang 550025 (China)

2012-04-15T23:59:59.000Z

91

Hadron supercolliders: The 1-TeV scale and beyond  

SciTech Connect (OSTI)

Greater understanding of the connection between the weak and electromagnetic interactions is central to progress in elementary-particle physics. A definitive exploration of the mechanism for electroweak symmetry breaking will require collisions between fundamental constituents at energies on the order of 1 TeV. This goal drives the design of high-energy, high-luminosity hadron colliders that will be commissioned during the next decade, but by no means completely defines their scientific potential. These three lectures are devoted to a review of the standard-model issues that motivated an experimental assault on the 1-TeV scale, an introduction to the machines and the experimental environment they will present, and a survey of possibilities for measurement and discovery with a multi-TeV hadron collider. 72 refs., 29 figs.

Quigg, C.

1990-08-10T23:59:59.000Z

92

What causes high resistivity in CdTe  

SciTech Connect (OSTI)

Shallow donors are often introduced into semiconductor materials to enhance n-type conductivity. However, they can sometimes also be used to obtain compensation between donors and acceptors, resulting in high resistivity in semiconductors. For example, CdTe can be made semi-insulating by shallow donor doping. This is routinely done to obtain high resistivity in CdTe-based radiation detectors. However, it is widely believed that the shallow donor alone cannot be responsible for the high resistivity in CdTe. This is based on the argument that it is practically impossible to control the shallow donor doping level so precisely that the free carrier density can be brought below the desired value suitable for radiation detection applications. Therefore, a deep native donor is usually assumed to exist in CdTe and pin the Fermi level near midgap. In this paper, we present our calculations on carrier statistics and energetics of shallow donors and native defects in CdTe and illustrate different donor-specific mechanisms for achieving carrier compensation. Our results show that the shallow donor can be used to reliably obtain high resistivity in CdTe without requiring additional deep donors. Since radiation detection applications require both high resistivity and good carrier transport, one should generally use shallow donors and shallow acceptors for carrier compensation and avoid deep centers that are effective carrier traps. This study highlights how the interaction between impurities and native defects intricately affects the Fermi level pinning in the semiconductor band gap and the associated resistivity of the material.

Biswas, Koushik [ORNL; Du, Mao-Hua [ORNL

2012-01-01T23:59:59.000Z

93

Optically induced magnetic polarons in EuTe  

SciTech Connect (OSTI)

Direct measurements of the photoinduced magnetization in EuTe, using a two color pump-and-probe technique, are presented. The photoinduced effect was pumped using photons of above-the-bandgap energy, and detected by the Faraday rotation of a probe beam of energy below-the-bandgap. The photoinduced Faraday rotation changes sign, as expected from our model for the optically induced magnetic polaron. The EuTe spin-flop transition at low fields is also detected as a sharp step in the photoinduced Faraday rotation, and its observation provides additional supports for the photoinduced polaron model.

Henriques, A. B.; Galgano, G. D. [Instituto de Física, Universidade de São Paulo, Caixa Postal 66318, 05315-970, São Paulo (Brazil); Abramof, E.; Rappl, P. H. O. [LAS - INPE, Av. Dos Astronautas, 1758, 12227-010, São José dos Campos (Brazil)

2013-12-04T23:59:59.000Z

94

Precision Calibration of the NuTeV Calorimeter  

E-Print Network [OSTI]

NuTeV is a neutrino-nucleon deep-inelastic scattering experiment at Fermilab. The detector consists of an iron-scintillator sampling calorimeter interspersed with drift chambers, followed by a muon toroidal spectrometer. We present determinations of response and resolution functions of the NuTeV calorimeter for electrons, hadrons, and muons over an energy range of 4.8 to 190 GeV. The absolute hadronic energy scale is determined to an accuracy of 0.43%. We compare our measurements to predictions from calorimeter theory and GEANT3 simulations.

The NuTeV Collaboration; D. A. Harris; J. Yu

1999-08-20T23:59:59.000Z

95

Relativistic calculations of electronic states of TeH  

Science Journals Connector (OSTI)

Relativistic configuration interaction calculations of five ?–? states [3/2 1/2 1/2(II) 3/2(II) 5/2] of TeH are carried out. Comparison calculations of the 2? and 4? ?–s states are also carried out with the objective of understanding the effect of spin–orbit interaction on the electronic states of TeH. These calculations enable assignment of some of the experimentally observed spectra. The 1/2(II) 3/2(II) and 5/2 states exhibit interesting avoided crossings.

K. Balasubramanian; Ming Han; M. Z. Liao

1987-01-01T23:59:59.000Z

96

PRECONTACT SURFACE CHEMISTRY EFFECTS ON CdWCdTe SOLAR CELL PERFORMANCE AND STABILITY  

E-Print Network [OSTI]

PRECONTACT SURFACE CHEMISTRY EFFECTS ON CdWCdTe SOLAR CELL PERFORMANCE AND STABILITY Dave Albin (CBD) and close spaced sublimation (CSS) respectively. CdTe growth is followed by either solution

Sites, James R.

97

Impurity and back contact effects on CdTe/CdS thin film solar cells.  

E-Print Network [OSTI]

??CdTe/CdS thin film solar cells are the most promising cost-effective solar cells. The goal of this project is to improve the performance for CdS/CdTe devices… (more)

Zhao, Hehong

2008-01-01T23:59:59.000Z

98

Resonant Level Enhancement of the Thermoelectric Power of Bi2Te3...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Power of Bi2Te3 with Tin Application to practical p-type thermoelectric tin alloys for heat pumps. heremans.pdf More Documents & Publications The tin impurity in Bi0.5Sb1.5Te3...

99

Pressure-induced Phase Transition in Thiol-capped CdTe Nanoparticles  

SciTech Connect (OSTI)

Phase transitions for CdTe nanoparticles (NPs) under high pressure up to 37.0 GPa have been studied using fluorescence measurements. The phase transition from cinnarbar to rocksalt phase has been observed in CdTe NPs solution at 5.8 GPa, which is much higher than the phase transition pressure of bulk CdTe (3.8 GPa) and that of CdTe NPs in solid form (0.8 GPa). CdTe NPs solution therefore shows elevated phase transition pressure and enhanced stability against pressure compared with bulk CdTe and CdTe NPs in solid forms. The enhanced stability of CdTe NPs solution has been attributed to possible shape change in the phase transition and/or inhomogeneous strains in nanoparticle solutions.

Wu, F; Zaug, J; Young, C; Zhang, J Z

2006-11-29T23:59:59.000Z

100

Ligand Mediated Surface Reconstruction of Photoluminescent CdTe Quantum Dots.  

E-Print Network [OSTI]

??Enhancement of photoluminescence (PL) is observed for light-shielded dodecylamine-capped colloidal CdTe quantum dots (CdTe/DDA QDs) dispersed in toluene after washing and recapping. The PL quantum… (more)

Onnink, A.J.

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "te rm te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Development of Materials and Structures for p-type Contacts in CdTe Solar Cells.  

E-Print Network [OSTI]

??Solar cells based on CdTe absorbers are attractive due to the optimal direct band gap energy and large absorption coefficient of CdTe, however, their performance… (more)

Ferizovic, Dino

2012-01-01T23:59:59.000Z

102

WAVELENGTH DEPENDENT EFFECTIVE TRAP DENSITY IN CdTe : EVIDENCE FOR THE PRESENCE OF TWO  

E-Print Network [OSTI]

1 WAVELENGTH DEPENDENT EFFECTIVE TRAP DENSITY IN CdTe : EVIDENCE FOR THE PRESENCE OF TWO.1016/S0030-4018(96)00516-0 #12;2 Photorefractive semiconductors like CdTe are characterized by a low

103

Change in the current-carrier concentration upon doping PbTe with gallium  

SciTech Connect (OSTI)

Upon doping PbTe with gallium, both high-resistivity samples with intrinsic conductivity and low-resistivity samples with electronic conductivity (n/sub e/ = 10/sup 18/ cm/sup -3/) are produced on the PbTe-GaTe section. A thorough investigation of the dependence of the thermo-emf of Pb/sub 1-x/Ga/sub x/Te on the excess Pb and Te side showed the presence of a wide region with intrinsic conductivity. The experimental data can be explained by the fact that impure gallium in PbTe has negative Hubbard energy and stabilizes the Fermi level almost at the center of the forbidden band. At high gallium concentrations, Ga/sub 2/Te/sub 3/ precipitates at first, and then GaTe precipitates as well. The lead forming in excess transforms Ga/sup 3 +/ to Ga/sup +/, which produces the electronic conductivity in the material.

Bushmarina, G.S.; Gruzinov, B.F.; Drabkin, I.A.; Lev, E.Ya.; Moizhes, B.Ya; Suprun, S.G.

1987-07-01T23:59:59.000Z

104

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

SciTech Connect (OSTI)

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

105

1. INTRODUCTION CdTe/CdS solar cells are among the most promising  

E-Print Network [OSTI]

Te/CdS SOLAR CELLS A.Romeo, A.N. Tiwari, and H. Zogg Thin Films Physics Group, Institute of Quantum ElectronicsTe/CdS thin film solar cells. The merits of different TCOs and the properties of the CdTe/CdS solar cells1. INTRODUCTION CdTe/CdS solar cells are among the most promising devices for low cost and high

Romeo, Alessandro

106

Detector Performance of Ammonium-Sulfide-Passivated CdZnTe and CdMnTe Materials  

SciTech Connect (OSTI)

Dark currents, including those in the surface and bulk, are the leading source of electronic noise in X-ray and gamma detectors, and are responsible for degrading a detector's energy resolution. The detector material itself determines the bulk leakage current; however, the surface leakage current is controllable by depositing appropriate passivation layers. In previous research, we demonstrated the effectiveness of surface passivation in CZT (CdZnTe) and CMT (CdMnTe) materials using ammonium sulfide and ammonium fluoride. In this research, we measured the effect of such passivation on the surface states of these materials, and on the performances of detectors made from them.

Kim, K.H.; Bolotnikov, A.E.; Camarda, G.S.; Marchini, L.; Yang, G.; Hossain, A.; Cui, Y.; Xu, L.; and James, R.B.

2010-08-01T23:59:59.000Z

107

Nanoscale Imaging of Photocurrent and Efficiency in CdTe Solar Cells  

Science Journals Connector (OSTI)

Nanoscale Imaging of Photocurrent and Efficiency in CdTe Solar Cells ... The local collection characteristics of grain interiors and grain boundaries in thin-film CdTe polycrystalline solar cells are investigated using scanning photocurrent microscopy. ... photovoltaics; CdTe; scanning photocurrent microscopy; solar cells; NSOM ...

Marina S. Leite; Maxim Abashin; Henri J. Lezec; Anthony Gianfrancesco; A. Alec Talin; Nikolai B. Zhitenev

2014-10-15T23:59:59.000Z

108

Carbon Sequestration in Terrestrial Ecosystems (CSiTE) PRINCIPAL INVESTIGATOR: Stan D. Wullschleger  

E-Print Network [OSTI]

Carbon Sequestration in Terrestrial Ecosystems (CSiTE) PRINCIPAL INVESTIGATOR: Stan D. Wullschleger://csite.eds.ornl.gov PROJECT DESCRIPTION The Carbon Sequestration in Terrestrial Ecosystems (CSiTE) project conducts research of switchgrass growing in the field. #12;Carbon Sequestration in Terrestrial Ecosystems (CSiTE) tion of inputs

109

NREL study may provide future guidance in improving CdS/CdTe photovoltaic device performance.  

E-Print Network [OSTI]

NREL study may provide future guidance in improving CdS/CdTe photovoltaic device performance. The majority of minority carrier lifetime (MCL) studies performed on CdS/CdTe photovoltaic (PV) devices have Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices." Proc. 37th IEEE Photovoltaic

110

Low temperature growth of ZnTe by synchroton radiation using metalorganic sources  

Science Journals Connector (OSTI)

The use of synchrotron radiation to convert diethylzinc and diethyltelluride molecules into ZnTe has been employed for ZnTe growth. The formation of ZnTe epitaxial layer on (100) oriented GaAs substrate at room temperature is experimentally demonstrated. It is shown by x?ray photoelectron spectroscopy that no carbon is included in the film. ?

Makoto Ikejiri; Toshihiro Ogata; Hiroshi Ogawa; Mitsuhiro Nishio; Akira Yoshida

1994-01-01T23:59:59.000Z

111

Solar Energy Materials & Solar Cells 91 (2007) 13881391 Bifacial configurations for CdTe solar cells  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 91 (2007) 1388­1391 Bifacial configurations for CdTe solar We present a different back contact for CdTe solar cell by the application of only a transparent that acts as a free-Cu stable back contact and at the same time allows to realize bifacial CdTe solar cells

Romeo, Alessandro

112

PHOTOSCANNING OF CdTe DETECTORS FOR INVESTIGATION OF CRYSTAL QUALITY  

E-Print Network [OSTI]

349 PHOTOSCANNING OF CdTe DETECTORS FOR INVESTIGATION OF CRYSTAL QUALITY AND CONTACT BEHAVIOUR P. A. Preliminary results are reported on light scanning of CdTe detectors with a mechanical scanning system using is absorbed in CdTe with an absorption length of appro- ximately 10 gm. The two mirrors were driven

Paris-Sud XI, Université de

113

Optical implementation of entangled multi-spin states in a CdTe quantum well  

E-Print Network [OSTI]

Optical implementation of entangled multi-spin states in a CdTe quantum well J.M. Baoa , A in a CdTe quantum well. Our method, relying on the exchange interaction between optically excited holes; 78.67.De; 42.50.Md Keywords: A. CdTe quantum wells; D. Ultrafast optics; D. Quantum computation; D

Bao, Jiming

114

Structural tuning of color chromaticity through nonradiative energy transfer by interspacing CdTe nanocrystal monolayers  

E-Print Network [OSTI]

Structural tuning of color chromaticity through nonradiative energy transfer by interspacing CdTe transfer in the heterostructure of layer-by-layer spaced CdTe nanocrystal NC solids. We achieved highly demonstrated efficient FRET in LbL assembled bilayers of CdTe NCs. In another structure, alternating layers

Demir, Hilmi Volkan

115

USE OF VARIOUS DEVICE GEOMETRIES TO IMPROVE THE PERFORMANCE OF CdTe DETECTORS (*)  

E-Print Network [OSTI]

343 USE OF VARIOUS DEVICE GEOMETRIES TO IMPROVE THE PERFORMANCE OF CdTe DETECTORS (*) K. ZANIO. - The most direct method of increasing the resolution of CdTe gamma ray and x-ray detectors is to increase of Environmental and Biomedical Research. doped CdTe. Devices do not polarize as those having blocking contacts

Paris-Sud XI, Université de

116

NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE  

E-Print Network [OSTI]

NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE M. Gloeckler, A. Consequently specific baseline parameters for CIGS and CdTe are proposed. The modeling results important complications that are often found in experimental CIGS and CdTe solar cells. 1. INTRODUCTION

Sites, James R.

117

USE OF CdTe DETECTORS IN BONE MINERAL MEASUREMENTS J. VOGEL, J. ULLMAN  

E-Print Network [OSTI]

375 USE OF CdTe DETECTORS IN BONE MINERAL MEASUREMENTS J. VOGEL, J. ULLMAN Nuclear Medicine. Cet ensemble emploie des détecteurs CdTe mesurant la transmission d'un faisceau collimaté de rayons X periods of prolonged bedrest or weightlessness. The unit employs CdTe detectors to mea- sure

Paris-Sud XI, Université de

118

Nonresonant four-wave mixing in photorefractive CdTe crystals using a picosecond parametric generator  

E-Print Network [OSTI]

Nonresonant four-wave mixing in photorefractive CdTe crystals using a picosecond parametric at nonresonant interaction, thus allowing a study of time-resolved carrier transport in CdTe crystals to be made space-charge SC electric fields have been studied in vanadium or germanium doped semi-insulating CdTe

Boyer, Edmond

119

IMPROVEMENTS IN THE MANUFACTURE OF CdTe GAMMA RAY DETECTORS  

E-Print Network [OSTI]

141 IMPROVEMENTS IN THE MANUFACTURE OF CdTe GAMMA RAY DETECTORS S. BRELANT The Aerospace been made in the quality of chlorine-doped CdTe crystals manufactured by the traveling heater method applications of CdTe gamma ray detectors has been the continuous measurement of ablating materials

Paris-Sud XI, Université de

120

CRYSTAL GROWTH BY SOLVENT TECHNIQUES AND CHARACTERISTIC PROPERTIES OF CdTe  

E-Print Network [OSTI]

117 CRYSTAL GROWTH BY SOLVENT TECHNIQUES AND CHARACTERISTIC PROPERTIES OF CdTe T. TAGUCHI, J and holes are obtained. REVUE DE PHYSIQUE APPLIQUÃ?E TOME 12, FÃ?VRIER 1977, PAGE 117 1. Introduction. - CdTe during donor doping since CdTe has a strong tendency for self compensation However, in spite of a great

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "te rm te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

APPLICATIONS OF CdTe. A REVIEW Mobil Tyco Solar Energy Corporation, 16 Hickory Drive  

E-Print Network [OSTI]

APPLICATIONS OF CdTe. A REVIEW F. V. WALD Mobil Tyco Solar Energy Corporation, 16 Hickory Drive sont également données. Abstract. 2014 The review considers the history of CdTe in short form advanced. II. APPLICATIONS OF CADMIUM TELLURIDE AND DEVICES BASED ON THIS MATERIAL. Section II. 1 : CdTe

Paris-Sud XI, Université de

122

CHARACTERIZATION OF CdTe WITH PHOTOELECTRONIC TECHNIQUES A. M. MANCINI and C. MANFREDOTTI  

E-Print Network [OSTI]

255 CHARACTERIZATION OF CdTe WITH PHOTOELECTRONIC TECHNIQUES A. M. MANCINI and C. MANFREDOTTI seront discutés dans le cas où elles sont mises en 0153uvre sur CdTe. Abstract. 2014 Thermally stimulated current (TSC) and space-charge limited current (SCLC) measurements have been performed in CdTe grown

Paris-Sud XI, Université de

123

BIOTELEMETRY BASED ON CdTe-DETECTORS J. BOJSEN, N. ROSSING, O. SOEBERG and S. VADSTRUP  

E-Print Network [OSTI]

radionuclide detectors (CdTe) 2-3 mm3 (developed by C. R. N. Strasbourg) have been tested with special to the skin for surface detection [2, 3]. Among several new semiconductor materials the cadmium telluride (CdTe. - The detector probe, developed by C. R. N., Strasbourg, France, consists of a CdTe- crystal (2-3 mm

Paris-Sud XI, Université de

124

EFFECT OF BACK-CONTACT COPPER CONCENTRATION ON CdTe CELL OPERATION  

E-Print Network [OSTI]

EFFECT OF BACK-CONTACT COPPER CONCENTRATION ON CdTe CELL OPERATION A.O. Pudov, M. Gloeckler, S of Mechanical Engineering Colorado State University, Ft. Collins, CO 80523 ABSTRACT CdTe solar cells were Copper is commonly used to form low-barrier contacts to p-type CdTe absorbers. Copper, however, is a fast

Sites, James R.

125

CHARACTERIZATION OF UNDOPED HIGH RESISTIVITY CdTe GROWN BY A THM METHOD  

E-Print Network [OSTI]

185 CHARACTERIZATION OF UNDOPED HIGH RESISTIVITY CdTe GROWN BY A THM METHOD R. STUCK, J. C. MULLER techniques of cadmium tellu- ride crystals (CdTe) allowed to obtain high resistivity crystals of detector shape of the phase diagram of CdTe, it seemed interesting to characterize these materials in order

Paris-Sud XI, Université de

126

Exploring the Potential for High-Quality Epitaxial CdTe Solar Cells , Ana Kanevce2  

E-Print Network [OSTI]

Exploring the Potential for High-Quality Epitaxial CdTe Solar Cells Tao Song1 , Ana Kanevce2 National Renewable Energy Laboratory, Golden, CO, 80401, USA Abstract -- Traditional polycrystalline CdTeV and ~ 20%. Epitaxial CdTe with high-quality, low defect-density, and high carrier density, could yield

Sites, James R.

127

Biaxial CdTe/CaF2 films growth on amorphous surface , F. Tang a  

E-Print Network [OSTI]

electron microscopy Metal organic chemical vapor deposition A continuous and highly biaxially textured CdTe nanorods as a buffer layer. The interface between the CdTe film and CaF2 nanorods and the morphology of the CdTe film were studied by transmission electron microscopy (TEM) and scanning electron microscopy

Wang, Gwo-Ching

128

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION ELECTRON-REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS Submitted by Kuo-Jui Hsiao ELECTRON- REFLECTOR STRATEGY FOR CdTe THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS SOLAR CELLS The CdTe thin-film solar cell has a large absorption coefficient and high theoretical

Sites, James R.

129

Trace formula for dielectric cavities III: TE modes  

E-Print Network [OSTI]

The construction of the semiclassical trace formula for the resonances with the transverse electric (TE) polarization for two-dimensional dielectric cavities is discussed. Special attention is given to the derivation of the two first terms of Weyl's series for the average number of such resonances. The obtained formulas agree well with numerical calculations for dielectric cavities of different shapes.

E. Bogomolny; R. Dubertrand

2012-06-15T23:59:59.000Z

130

STAFF POSITION DESCRIPTION SAN JOSE STA TE HUMAN RESOURCES  

E-Print Network [OSTI]

STAFF POSITION DESCRIPTION SAN JOSE STA TE HUMAN RESOURCES UNIVERSITY Workforce Planning l: 408-924-2250 I408-924-1784 (fax) Job Description Staff Date: Workforce Planning, Human Resources (Name [Workforce Planning reviews the CSU classification standards with essential duties of the positions] F

Su, Xiao

131

Results of a Si/CdTe Compton Telescope  

E-Print Network [OSTI]

We have been developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. We use a Si strip and CdTe pixel detector for the Compton telescope to cover an energy range from 60 keV. For energies above several hundred keV, the higher efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton Telescope, we have developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton equation from 122 keV to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV and 3.1 keV at 122 keV, respectively. The angular resolution obtained at 511 keV is measured to be 12.2 degree (FWHM).

Kousuke Oonuki; Takaaki Tanaka; Shin Watanabe; Shin'ichiro Takeda; Kazuhiro Nakazawa; Takefumi Mitani; Tadayuki Takahashi; Hiroyasu Tajima; Yasushi Fukazawa; Masaharu Nomachi

2005-09-21T23:59:59.000Z

132

Ion-beam-induced damage formation in CdTe  

SciTech Connect (OSTI)

Damage formation in <111>- and <112>-oriented CdTe single crystals irradiated at room temperature and 15 K with 270 keV Ar or 730 keV Sb ions was investigated in situ using Rutherford backscattering spectroscopy (RBS) in channeling configuration. Defect profiles were calculated from the RBS spectra using the computer code DICADA and additional energy-dependent RBS measurements were performed to identify the type of defects. At both temperatures no formation of a buried amorphous layer was detected even after prolonged irradiation with several 10{sup 16} ions/cm{sup 2}. The fact that CdTe is not rendered amorphous even at 15 K suggests that the high resistance to amorphization is caused by the high ionicity of CdTe rather than thermal effects. The calculated defect profiles show the formation of a broad defect distribution that extends much deeper into the crystal than the projected range of the implanted ions at both temperatures. The post-range defects in CdTe thus do not seem to be of thermal origin either, but are instead believed to result from migration driven by the electronic energy loss.

Rischau, C. W.; Schnohr, C. S.; Wendler, E.; Wesch, W. [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2011-06-01T23:59:59.000Z

133

Diffuse TeV Emission at the Galactic Centre  

E-Print Network [OSTI]

The High-Energy Stereoscopic System (HESS) has detected intense diffuse TeV emission correlated with the distribution of molecular gas along the galactic ridge at the centre of our Galaxy. Earlier HESS observations of this region had already revealed the presence of several point sources at these energies, one of them (HESS J1745-290) coincident with the supermassive black hole Sagittarius A*. It is still not entirely clear what the origin of the TeV emission is, nor even whether it is due to hadronic or leptonic interactions. It is reasonable to suppose, however, that at least for the diffuse emission, the tight correlation of the intensity distribution with the molecular gas indicates a pionic-decay process involving relativistic protons. In this paper, we explore the possible source(s) of energetic hadrons at the galactic centre, and their propagation through a turbulent medium. We conclude that though Sagittarius A* itself may be the source of cosmic rays producing the emission in HESS J1745-290, it cannot be responsible for the diffuse emission farther out. A distribution of point sources, such as pulsar wind nebulae dispersed along the galactic plane, similarly do not produce a TeV emission profile consistent with the HESS map. We conclude that only a relativistic proton distribution accelerated throughout the inter-cloud medium can account for the TeV emission profile measured with HESS.

Elizabeth Wommer; Fulvio Melia; Marco Fatuzzo

2008-04-18T23:59:59.000Z

134

TheerbInsTITuTeSectionname The Erb Institute  

E-Print Network [OSTI]

Conservation & Policy 17 Green Markets 20 Entrepreneurship 24 Corporate Sustainability & Public Policy 27 [ ]Year in Review 2012 #12;ii TheerbInsTITuTeSectionname Social Enterprise 4 Local Impact 7 Energy 10 Education 31 Climate Change & Communication 34 The Erb Institute for Global Sustainable Enterprise Erb Inst

Edwards, Paul N.

135

TeV Particle Astrophysics II: Summary comments  

E-Print Network [OSTI]

A unifying theme of this conference was the use of different approaches to understand astrophysical sources of energetic particles in the TeV range and above. In this summary I review how gamma-ray astronomy, neutrino astronomy and (to some extent) gravitational wave astronomy provide complementary avenues to understanding the origin and role of high-energy particles in energetic astrophysical sources.

Thomas K. Gaisser

2006-12-11T23:59:59.000Z

136

Carrier dynamics and activation energy of CdTe quantum dots in a Cd{sub x}Zn{sub 1-x}Te quantum well  

SciTech Connect (OSTI)

We investigate the optical properties of CdTe quantum dots (QDs) in a Cd{sub 0.3}Zn{sub 0.7}Te quantum well (QW) grown on GaAs (100) substrates. Carrier dynamics of CdTe/ZnTe QDs and quantum dots-in-a-well (DWELL) structure is studied using time-resolved photoluminescence (PL) measurements, which show the longer exciton lifetime of the DWELL structure. The activation energy of the electrons confined in the DWELL structure, as obtained from the temperature-dependent PL spectra, was also higher than that of electrons confined in the CdTe/ZnTe QDs. This behavior is attributed to the better capture of carriers into QDs within the surrounding QW.

Han, W. I.; Lee, J. H.; Yu, J. S.; Choi, J. C. [Department of Physics, Yonsei University, Wonju 220-710 (Korea, Republic of); Lee, H. S. [Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

2011-12-05T23:59:59.000Z

137

Exploring Resonance Levels and Nanostructuring in the PbTe?CdTe System and Enhancement of the Thermoelectric Figure of Merit  

SciTech Connect (OSTI)

We explored the effect of Cd substitution on the thermoelectric properties of PbTe in an effort to test a theoretical hypothesis that Cd atoms on Pb sites of the rock salt lattice can increase the Seebeck coefficient via the formation of a resonance level in the density of states near the Fermi energy. We find that the solubility of Cd is less than previously reported, and CdTe precipitation occurs to create nanostructuring, which strongly suppresses the lattice thermal conductivity. We present detailed characterization including structural and spectroscopic data, transmission electron microscopy, and thermoelectric transport properties of samples of PbTe?x% CdTe?0.055% PbI{sub 2} (x = 1, 3, 5, 7, 10), PbTe?1% CdTe?y% PbI{sub 2} (y = 0.03, 0.045, 0.055, 0.08, 0.1, 0.2), PbTe?5% CdTe?y% PbI{sub 2} (y = 0.01, 0.03, 0.055, 0.08), and PbTe?1% CdTe?z% Sb (z = 0.3, 0.5, 1, 1.5, 2, 3, 4, 5, 6). All samples follow the Pisarenko relationship, and no enhancement of the Seebeck coefficient was observed that could be attributed to a resonance level or a distortion in the density of states. A maximum ZT of 1.2 at 720 K was achieved for the PbTe?1% CdTe?0.055% PbI{sub 2} sample arising from a high power factor of 17 ?W/(cm K{sup 2}) and a very low lattice thermal conductivity of 0.5 W/(m K) at 720 K.

Ahn, Kyunghan; Han, Mi-Kyung; He, Jiaqing; Androulakis, John; Ballikaya, Sedat; Uher, Ctirad; Dravid, Vinayak; Kanatzidis, Mercouri G.

2010-01-01T23:59:59.000Z

138

29th International Cosmic Ray Conference Pune (2005) 00, 101-104 TeV Observations of EGRET Unidentified Sources  

E-Print Network [OSTI]

29th International Cosmic Ray Conference Pune (2005) 00, 101-104 TeV Observations of EGRET sr), high (>90%) duty factor, TeV gamma-ray observatory is ideal for searching for TeV emission from Milagro has sufficient exposure. Of these 68 sources, 29 are within 10 degrees of the Galactic plane. Te

California at Santa Cruz, University of

139

Electrical, optical, and thermal properties of Sn-doped phase change material Ge2Sb2Te5  

Science Journals Connector (OSTI)

In this article, effect of Sn on the electrical, optical, and thermal properties of Ge2Sb2Te5 is studied. Ge2Sb2Te5, Ge1.55Sb2Te5Sn0.45, and Ge1.1Sb2Te5Sn0.9...alloys are prepared by melt quenching technique and ...

Gurinder Singh; Aman Kaura; Monika Mukul; S. K. Tripathi

2013-01-01T23:59:59.000Z

140

High efficiency photodetectors fabricated by electrostatic layer-by-layer self-assembly of CdTe quantum dots  

E-Print Network [OSTI]

High efficiency photodetectors fabricated by electrostatic layer-by-layer self-assembly of CdTe 20 October 2008 We demonstrate high-performance photodetectors from multilayers of CdTe quantum dots. The synthesis of CdTe QDs in aqueous solution using cadmium perchlorate hydrate and Al2Te3 was previously re

Lin, Lih Y.

Note: This page contains sample records for the topic "te rm te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

ROLE OF COPPER IN THE PERFORMANCE OF CdS/CdTe SOLAR CELLS * , D. Albin2  

E-Print Network [OSTI]

simulations to reproduce and explain some of the experimental results. Introduction The performance of CdTe Cucd in CdTe [1,2]. Cu can also migrate along grain boundaries toward the main junction. The standard with a relatively simpler one in which Cu metal of varying thickness is evaporated on Te-rich CdTe surfaces

Sites, James R.

142

1. INTRODUCTION CdTe/CdS is one of the most promising solar cell for low  

E-Print Network [OSTI]

with CdTe grown by close space sublimation, electrodeposition, spray pyrolysis, vacuum evaporation and RF conversion of CdTe layers, as well as for the intermixing of CdS-CdTe. An optimum annealing condition is required for the formation of an appropriate CdTe1-x-Sx intermixed interface. It is desirable to separately

Romeo, Alessandro

143

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas in Substitution of CdCl2  

E-Print Network [OSTI]

High Efficiency CdTe/CdS Thin Film Solar Cells Prepared by Treating CdTe Films with a Freon Gas delle Scienze, 37/A-43010 Fontanini, Parma, Italy ABSTRACT: CdTe/CdS thin film solar cells have reached in the preparation of high efficiency CdTe/CdS solar cells is the activation treatment of CdTe film. Most research

Romeo, Alessandro

144

Charge transport properties of CdMnTe radiation detectors  

SciTech Connect (OSTI)

Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

Kim K.; Rafiel, R.; Boardman, M.; Reinhard, I.; Sarbutt, A.; Watt, G.; Watt, C.; Uxa, S.; Prokopovich, D.A.; Belas, E.; Bolotnikov, A.E.; James, R.B.

2012-04-11T23:59:59.000Z

145

Characterization of isothermal vapor phase epitaxial (Hg,Cd)Te  

Science Journals Connector (OSTI)

We report on the characterization of mercury cadmium telluride (Hg 1?x Cd x Te) film grown by the isothermal vapor phase epitaxial method (ISOVPE) and on the surface conversion of bulk Hg 1?xCd x Te to larger bandgap material. The crystal perfection is evaluated using defect etching electron beam and electrolyte electroreflectance (EBER and EER) and Rutherford backscattering spectrometry (RBS). Hall measurements are used to measure carrier densities and mobilities. Surface concentrations and concentration profiles are measured for the ISOVPE grown layers by transmission Fourier transform infrared spectroscopy (FTIR) and electron?probe microanalysis (EPMA) to establish quantitative informations about composition control. Metal–insulator?semiconductor (MIS) structures were made and the properties important to device performance such as compositional uniformity storage time and carrier concentration are measured. The ISOVPE layers are compared in quality to films grown by other methods and show promise for MIS devices.

S. B. Lee; L. K. Magel; M. F. S. Tang; D. A. Stevenson; J. H. Tregilgas; M. W. Goodwin; R. L. Strong

1990-01-01T23:59:59.000Z

146

Point Defect Characterization in CdZnTe  

SciTech Connect (OSTI)

Measurements of the defect levels and performance testing of CdZnTe detectors were performed by means of Current Deep Level Transient Spectroscopy (I-DLTS), Transient Charge Technique (TCT), Current versus Voltage measurements (I-V), and gamma-ray spectroscopy. CdZnTe crystals were acquired from different commercial vendors and characterized for their point defects. I-DLTS studies included measurements of defect parameters such as energy levels in the band gap, carrier capture cross sections, and defect densities. The induced current due to laser-generated carriers was measured using TCT. The data were used to determine the transport properties of the detectors under study. A good correlation was found between the point defects in the detectors and their performance.

Gul,R.; Li, Z.; Bolotnikov, A.; Keeter, K.; Rodriguez, R.; James, R.

2009-03-24T23:59:59.000Z

147

MHK Projects/TE4 | Open Energy Information  

Open Energy Info (EERE)

TE4 TE4 < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":5,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"500px","height":"350px","centre":false,"title":"","label":"","icon":"File:Aquamarine-marker.png","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":52.3247,"lon":1.68765,"alt":0,"address":"","icon":"http:\/\/prod-http-80-800498448.us-east-1.elb.amazonaws.com\/w\/images\/7\/74\/Aquamarine-marker.png","group":"","inlineLabel":"","visitedicon":""}]}

148

RARE B MESON DECAYS T.E. Browder \\Lambda  

E-Print Network [OSTI]

Supported by the US Department of Energy c fl 2002 by T.E. Browder #12; 1 Introduction, Motivation on the construction of the Standard Model of particle physics. Recall that in a physical picture with only three. As a result, the weak neutral current, J 0 NC , J 0 NC = u¯u + d c ¯ d c + s c ¯ s c (2) = u¯u + d ¯ d cos 2

Browder, Tom

149

Photoluminescence upconversion in colloidal CdTe quantum dots  

Science Journals Connector (OSTI)

Efficient photoluminescence (PL) up-conversion has been observed in colloidal CdTe quantum dots with an energy gain of as high as 360 meV. Compared with the normal PL, the peak energy of this up-converted PL (UCPL) shows a redshift of about 80 meV, and the corresponding radiative lifetime becomes nearly twice as long. This UCPL is attributed to the carrier recombination involving surface states mainly through a thermal excitation process.

Xiaoyong Wang; W. William Yu; Jiayu Zhang; Jose Aldana; Xiaogang Peng; Min Xiao

2003-09-22T23:59:59.000Z

150

Mr. John E. Kieling, Chief Hazardous Was te Bureau  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

John E. Kieling, Chief John E. Kieling, Chief Hazardous Was te Bureau Depa rtment of Energy Carlsbad Field Office P. O. Box 3090 Carlsbad , New Mexico 88221 NOV 0 5 2013 New Mexico Environment Department 2905 Rodeo Park Drive East. Building 1 Santa Fe, New Mexico 87505-6303 Subject: Panel 6 Closure and Final Waste Emplacement Notifications Dear Mr. Kieling : The purpose of this leiter is 1 0 notify th e New Mexico Environment Department (NMEO) that the

151

Density functional simulations of phase change materials: disordered phases of Ge8Sb2Te11 and Ag/In/Sb/Te alloys  

E-Print Network [OSTI]

E*PCOS2009 Density functional simulations of phase change materials: disordered phases of Ge8Sb2Te75.0Te17.7 (AIST). These represent two families used widely as phase change materials: pseudobinary and more flexible than those of Ag. Key words: Phase change materials, density functional calculations

152

ELUTIONS Inc formerly TeCom | Open Energy Information  

Open Energy Info (EERE)

ELUTIONS Inc formerly TeCom ELUTIONS Inc formerly TeCom Jump to: navigation, search Name ELUTIONS Inc (formerly TeCom) Place Tampa, Florida Zip 33605 Sector Efficiency Product Tampa-based wireless enterprise automation solutions firm. Elutions provides an Active Energy Management service allowing users to increase efficiency by monitoring, forecasting and analyzing utility resource consumption. Coordinates 27.94653°, -82.459269° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":27.94653,"lon":-82.459269,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

153

A New Limit on the Neutrinoless DBD of 130Te  

E-Print Network [OSTI]

We report the present results of CUORICINO a cryogenic experiment on neutrinoless double beta decay (DBD) of 130Te consisting of an array of 62 crystals of TeO2 with a total active mass of 40.7 kg. The array is framed inside of a dilution refrigerator, heavily shielded against environmental radioactivity and high-energy neutrons, and operated at a temperature of ~8 mK in the Gran Sasso Underground Laboratory. Temperature pulses induced by particle interacting in the crystals are recorded and measured by means of Neutron Transmutation Doped thermistors. The gain of each bolometer is stabilized with voltage pulses developed by a high stability pulse generator across heater resistors put in thermal contact with the absorber. The calibration is performed by means of two thoriated wires routinely inserted in the set-up. No evidence for a peak indicating neutrinoless DBD of 130Te is detected and a 90% C.L. lower limit of 1.8E24 years is set for the lifetime of this process. Taking largely into account the uncertainties in the theoretical values of nuclear matrix elements, this implies an upper boud on the effective mass of the electron neutrino ranging from 0.2 to 1.1 eV. This sensitivity is similar to those of the 76Ge experiments.

C. Arnaboldi; D. R. Artusa; F. T. Avignone III; M. Balata; I. Bandac; M. Barucci; J. W. Beeman; C. Brofferio; C. Bucci; S. Capelli; L. Carbone; S. Cebrian; O. Cremonesi; R. J. Creswick; A. de Waard; H. A. Farach; E. Fiorini; G. Frossati; E. Guardincerri; A. Giuliani; P. Gorla; E. E. Haller; J. McDonald; E. B. Norman; A. Nucciotti; E. Olivieri; M. Pallavicini; E. Palmieri; E. Pasca; M. Pavan; M. Pedretti; G. Pessina; S. Pirro; E. Previtali; L. Risegari; C. Rosenfeld; S. Sangiorgio; M. Sisti; A. R. Smith; L. Torres; G. Ventura

2005-01-13T23:59:59.000Z

154

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

SciTech Connect (OSTI)

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

155

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

156

Development of ZnTe:Cu Contacts for CdTe Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-08-320  

SciTech Connect (OSTI)

The main focus of the work at NREL was on the development of Cu-doped ZnTe contacts to CdTe solar cells in the substrate configuration. The work performed under the CRADA utilized the substrate device structure used at NREL previously. All fabrication was performed at NREL. We worked on the development of Cu-doped ZnTe as well as variety of other contacts such as Sb-doped ZnTe, CuxTe, and MoSe2. We were able to optimize the contacts to improve device parameters. The improvement was obtained primarily through increasing the open-circuit voltage, to values as high as 760 mV, leading to device efficiencies of 7%.

Dhere, R.

2012-04-01T23:59:59.000Z

157

First-Principles Study of Back Contact Effects on CdTe Thin Film Solar Cells  

SciTech Connect (OSTI)

Forming a chemically stable low-resistance back contact for CdTe thin-film solar cells is critically important to the cell performance. This paper reports theoretical study of the effects of the back-contact material, Sb{sub 2}Te{sub 3}, on the performance of the CdTe solar cells. First-principles calculations show that Sb impurities in p-type CdTe are donors and can diffuse with low diffusion barrier. There properties are clearly detrimental to the solar-cell performance. The Sb segregation into the grain boundaries may be required to explain the good efficiencies for the CdTe solar cells with Sb{sub 2}Te{sub 3} back contacts.

Du, Mao-Hua [ORNL

2009-01-01T23:59:59.000Z

158

Multi-TeV flaring from blazars: Markarian 421 a case study  

E-Print Network [OSTI]

The TeV blazar Markarian 421 underwent multi-TeV flaring during April 2004 and simultaneously observed in x-ray and TeV energies. It was observed that the TeV outbursts had no counterparts in the lower energies, which implies that this might be an orphan flare. In the context of hadronic model, we have shown that this multi-TeV flaring can be produced due to the interaction of Fermi-accelerated protons of energy $\\lesssim 168$ TeV with the background photons in the low energy tail of the synchrotron self-Compton spectrum of the blazar jet. We fit very well the flaring spectrum with this model. Based on this study, we speculate that Mrk 501 and PG 1553+113 are possible candidates for orphan flaring in the future.

Sahu, Sarira; Rajpoot, Subhash

2015-01-01T23:59:59.000Z

159

The Effect of Structural Vacancies on the Thermoelectric Properties of (Cu2Te)1-x(Ga2Te3)x  

SciTech Connect (OSTI)

We have studied the effects of structural vacancies on the thermoelectric properties of the ternary compounds (Cu2Te)1-x(Ga2Te3)x (x = 0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75), which are solid solutions found in the pseudo-binary phase diagram for Cu2Te and Ga2Te3. This system possesses tunable structural vacancy concentrations. The x= 0.5 phase, CuGaTe2, is nominally devoid of structural vacancies, while the rest of the compounds contain varying amounts of these features, and the volume density of vacancies increases with Ga2Te3 content. The sample with x = 0.5, 0.55, 0.571, 0.6, 0.625 crystallize in the chalcopyrite structure while the x = 0.667 and 0.75 adopt the Ga2Te3 defect zinc blende structure. Strong scattering of heat carrying phonons by structural defects, leads to the reduction of thermal conductivity, which is beneficial to the thermoelectric performance of materials. On the other hand, these defects also scatter charge carriers and reduce the electrical conductivity. All the samples investigated are p-type semiconductors as inferred by the signs of their respective Hall (RH) and Seebeck (S) coefficients. The structural vacancies were found to scatter phonons strongly, while a combination of increased carrier concentration, and vacancies decreases the Hall mobility ( H), degrading the overall thermoelectric performance. The room temperature H drops from 90 cm2/V s for CuGaTe2 to 13 cm2/V s in Cu9Ga11Te21 and 4.6 cm2/V s in CuGa3Te5. The low temperature thermal conductivity decreases significantly with higher Ga2Te3 concentrations (higher vacancy concentration) due to increased point defect scattering which dominate thermal resistance terms. At high temperatures, the dependence of thermal conductivity on the Ga2Te3 content is less significant. The presence of strong Umklapp scattering leads to low thermal conductivity at high temperatures for all samples investigated. The highest ZT among the samples in this study was found for the defect-free CuGaTe2 with ZT ~ 1.0 at 840K.

Ye, Zuxin [GM Research and Development Center; Cho, Jung Y [GM R& D and Planning, Warren, Michigan; Tessema, Misle [GM Research and Development Center; Salvador, James R. [GM R& D and Planning, Warren, Michigan; Waldo, Richard [GM R& D and Planning, Warren, Michigan; Wang, Hsin [ORNL; Cai, Wei [ORNL

2013-01-01T23:59:59.000Z

160

DETERMINATION AND CHARACTERIZATION OF DEEP LEVELS IN p-CdTe(Cl)  

E-Print Network [OSTI]

photons de 122 keV (57Co) et de 5 keV pour des photons de 59 keV (241Am). Abstract. 2014 CdTe single doped CdTe single crystals grown from tellurium solvent have a good resolution for gamma-rays, when. The investigation of the energy levels system of charged centres in CdTe, as well as in other II-VI compounds

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "te rm te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

ELECTRIC PROPERTIES OF SEMI-INSULATING CRYSTALS CdTe : Cl  

E-Print Network [OSTI]

239 ELECTRIC PROPERTIES OF SEMI-INSULATING CRYSTALS CdTe : Cl E. N. ARKADYEVA and O. A. MATVEEV A Des mesures d'effet Hall et de conductivité sont effectuées sur des cristaux de CdTe, dopé au chlore and conductivity measurement are carried out on chlorine doped semi- insulating CdTe crystals, of p and n electric

Boyer, Edmond

162

Voltage Dependent Carrier Collection in CdTe Solar Cells D.L. Btzner1  

E-Print Network [OSTI]

Voltage Dependent Carrier Collection in CdTe Solar Cells D.L. Bätzner1 , Guido Agostinelli2 , A to 1000nm, i.e. the band edge region of CdTe. Region I is further divided in a `blue' part between 300 nm III is as well subdivided in region IIIa from about 800 nm to the band gap of CdTe (~850 nm

Romeo, Alessandro

163

CdTe OPTICAL WAVEGUIDE MODULATORS (*) D. L. SPEARS and A. J. STRAUSS  

E-Print Network [OSTI]

401 CdTe OPTICAL WAVEGUIDE MODULATORS (*) D. L. SPEARS and A. J. STRAUSS Lincoln Laboratory guides d'ondes opto-acoustiques et opto-électriques ont été réalisés dans des guides d'ondes n-/n+ CdTe-électriques de faible tension ont été réalisés en appliquant des électrodes en or sur des plaquettes n+ de CdTe

Paris-Sud XI, Université de

164

ELECTROABSORPTION BY IMPURITIES AND DEFECTS IN SEMI-INSULATING CdTe  

E-Print Network [OSTI]

263 ELECTROABSORPTION BY IMPURITIES AND DEFECTS IN SEMI-INSULATING CdTe G. NEU, Y. MARFAING, R des défauts dans CdTe compensé non dopé et dopé au chlore de 1,2 à 1,6 eV. Trois groupes de symétrie. Abstract. 2014 Electroabsorption experiments have been conducted on semi-insulating CdTe prepared

Paris-Sud XI, Université de

165

CdTe-Cu(OH){sub 2} nanocomposite: Aqueous synthesis and characterization  

SciTech Connect (OSTI)

CdTe-Cu(OH){sub 2} nanocomposites were synthesized in aqueous solution by a seed-mediated growth approach. The effect of refluxing time and the concentration of Cu{sup 2+} on the preparation of these samples were measured using UV-visible absorption and photoluminescence analysis. The emission peak of the synthesized nanocomposites (CdTe-Cu(OH){sub 2}) was shifted from 605 (CdTe seed) to 621 nm. The size of CdTe nanoparticles were averaged about 3.22 nm, and the CdTe-Cu(OH){sub 2} nanocomposites were averaged as 5.19 nm. The synthesized CdTe-Cu(OH){sub 2} nanocomposite were characterized with XRD, EDAX, TEM, FT-IR, EPR, and thermal analysis (TG/DTG curves). The results indicate that as-prepared nanoparticles with core/shell structure exhibit interesting optical properties. -- Graphical Abstract: Schematic of aqueous synthesis route for CdTe-Cu(OH){sub 2} nanocomposite and The Stokes shift of CdTe nanocrystals and CdTe-Cu(OH){sub 2} Nanocomposites, (CdTe: emission at 605 nm, CdTe-Cu(OH){sub 2}: emission at 621 nm). Display Omitted Highlights: {yields} CdTe-Cu(OH){sub 2} nanocomposites were synthesized by a seed-mediated growth approach. {yields} The synthetic procedure is simple, and can be easily scaled up. {yields} The effect of refluxing time on the preparation of these samples was measured. {yields} The Cu(OH){sub 2} shell thickness was controlled by the amount of Cu in the solution. {yields} TEM images demonstrated homogeneous size distribution for these nanocomposites.

Abd El-sadek, M.S., E-mail: el_sadek_99@yahoo.co [Nanomaterial Laboratory, Physics Department, Faculty of Science, South Valley University, Qena 83523 (Egypt); Crystal Growth Centre, Anna University Chennai, Chennai 600025 (India); Moorthy Babu, S. [Crystal Growth Centre, Anna University Chennai, Chennai 600025 (India)

2011-05-15T23:59:59.000Z

166

DISSERTATION Role of the Cu-O Defect in CdTe Solar Cells  

E-Print Network [OSTI]

OF THE CU-O DEFECT COMPLEX IN CDTE SOLAR CELLS Thin-film CdTe is one of the leading materials used the defects present in thin-film CdTe deposited for solar cells. One key defect seen in the thin-film CdDISSERTATION Role of the Cu-O Defect in CdTe Solar Cells Submitted by Caroline R. Corwine

Sites, James R.

167

Superficies y Vacio 8, 69-72(1999) Sociedad Mexicana de Ciencias de Superficies y de Vaco. Electronic properties of (CdTe)x(In2Te3)1-x thin films grown by close spaced vapor  

E-Print Network [OSTI]

(CSVT-FE); CdTe and In2Te3 were employed as sources. The temperature of evaporation of the CdTe and In2 the band gap energy from a value as low as 0.6 eV up to 1.5 eV, the band gap of CdTe. It has been reported I. INTRODUCTION The ternary compound CdIn2Te4 is of interest since all compounds formed by mixing CdTe

Meléndez Lira, Miguel Angel

168

Electrical properties of PbTe single crystals with excess tellurium  

SciTech Connect (OSTI)

The effects of excess (up to 0.1 at %) Te atoms and heat treatment at 473 and 573 K for 120 h on the conductivity {sigma}, thermopower {alpha}, and Hall coefficient R of PbTe single crystals are studied. It is shown that excess Te atoms and annealing strongly affect the values and character of the temperature dependences of these parameters and the signs of {alpha} and R at low temperatures, which is caused by the acceptor effect of these atoms and the formation of antisite defects due to localization of Te in vacancies of the lead sublattice upon annealing.

Bagiyeva, G. Z., E-mail: bagieva-gjulandam@rambler.ru; Mustafayev, N. B.; Abdinova, G. Dj.; Abdinov, D. Sh. [National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)

2011-11-15T23:59:59.000Z

169

Characterization and Analysis of CIGS and CdTE Solar Cells: December 2004 - July 2008  

SciTech Connect (OSTI)

The work reported here embodies a device-physics approach based on careful measurement and interpretation of data from CIGS and CdTe solar cells.

Sites, J. R.

2009-01-01T23:59:59.000Z

170

Some possible sources of IceCube TeV-PeV neutrino events  

E-Print Network [OSTI]

The IceCube Collaboration has observed 37 neutrino events in the energy range $30\\, {\\text TeV}\\lesssim E_{\

Sarira Sahu; Luis Salvador Miranda

2014-08-21T23:59:59.000Z

171

Review of Photovoltaic Energy Production Using CdTe Thin-Film Modules: Extended Abstract Preprint  

SciTech Connect (OSTI)

CdTe has near-optimum bandgap, excellent deposition traits, and leads other technologies in commercial PV module production volume. Better understanding materials properties will accelerate deployment.

Gessert, T. A.

2008-09-01T23:59:59.000Z

172

Fabrication of ultra thin CdS/CdTe solar cells by magnetron sputtering.  

E-Print Network [OSTI]

?? CdTe is a nearly perfect absorber material for second generation polycrystalline solar cells because the bandgap closely matches the peak of the solar spectrum,… (more)

Plotnikov, Victor

2009-01-01T23:59:59.000Z

173

Construção e caracterização de célula solar tipo barreira Schottky CdTe/Al.  

E-Print Network [OSTI]

??In this work the techniques of hot wall epitaxy (HWE) and molecular beam epitaxy (MBE) on thin films of CdTe (cadmium telluride) were used in… (more)

Denis Rafael de Oliveira Pereira

2011-01-01T23:59:59.000Z

174

E-Print Network 3.0 - arond te dual-axis Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Michigan University Collection: Mathematics 62 BunchTiming Measurement in the Muon Cooling Experiment Summary: Bunch-Timing Measurement in the Muon Cooling Experiment Via TE...

175

~~~~: Gmt Lakes Cat-bar) ALTERNaTE I  

Office of Legacy Management (LM)

~~~: Gmt Lakes Cat-bar) ~~~: Gmt Lakes Cat-bar) ALTERNaTE I --------------------------------------- NAME: 333 Iv. Mkhi qr) Aw. thka o ~~~---~~~--~~~_-----__ C I TV : 8 Morim 'Love 82 10 bhh &Q Ir -+----------- STATE- fL I - ------ l OWNER(S) -__----_ past: Current: I --------------------____ Owner contacted q yes p no; _____--_____-____------~~~l if yes, data contacted -_--------__- TYPE OF OPERATION ---_------------- 0 Research & Development q Production scale testing 0 Pilot Scale 0 Bench Scale process 0 Theoretical Studies 0 Sample & Analysis Facility Type p Manufacturing I ! fJ University 0 Research Organization ! 0 Government Sponsored F+ci li ty 0 Other ----~~-~~~----~------ 0 Production 0 Disposal/Storage TYPE OF CUNTRKT ----~---~__----_ / w Prime

176

Simple shear processing of bulk BI?TE? alloys  

E-Print Network [OSTI]

diagram of the ECAE process. 26 FIGURE Page 14. Optical photomicrograph of p-type Biz Te& alloy grains before extrusion. . . . . 29 15. Optical photomicrograph of n-type Bi&Tet alloy grains before extrusion . . . . . 30 16. Schematic of ECAE tool... route C at 0. 3 in/min and 500'C 26. Optical photomicrograph of p-type BisTes alloy grains, after two passes 41 via route C at 0. 01 in/min and 500'C 42 FIGURE 27. Optical photomicrograph of p-type Biz Teq alloy grains, after four passes via route...

Im, Jae-taek

2012-06-07T23:59:59.000Z

177

TeV Astrophysics Constraints on Planck Scale Lorentz Violation  

E-Print Network [OSTI]

We analyze observational constraints from TeV astrophysics on Lorentz violating nonlinear dispersion for photons and electrons without assuming any a priori equality between the photon and electron parameters. The constraints arise from thresholds for vacuum Cerenkov radiation, photon decay and photo-production of electron-positron pairs. We show that the parameter plane for cubic momentum terms in the dispersion relations is constrained to an order unity region in Planck units. We find that the threshold configuration can occur with an asymmetric distribution of momentum for pair creation, and with a hard photon for vacuum Cerenkov radiation.

Ted Jacobson; Stefano Liberati; David Mattingly

2002-09-24T23:59:59.000Z

178

Electromagnetic leptogenesis at the TeV scale  

E-Print Network [OSTI]

We construct an explicit model implementing electromagnetic leptogenesis. In a simple extension of the Standard Model, a discrete symmetry forbids the usual decays of the right-handed neutrinos, while allowing for an effective coupling between the left-handed and right-handed neutrinos through the electromagnetic dipole moment. This generates correct leptogenesis with resonant enhancement and also the required neutrino mass via a TeV scale seesaw mechanism. The model is consistent with low energy phenomenology and would have distinct signals in the next generation colliders, and, perhaps even the LHC.

Debajyoti Choudhury; Namit Mahajan; Sudhanwa Patra; Utpal Sarkar

2011-04-11T23:59:59.000Z

179

Effect of shells on photoluminescence of aqueous CdTe quantum dots  

SciTech Connect (OSTI)

Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling.

Yuan, Zhimin; Yang, Ping, E-mail: mse_yangp@ujn.edu.cn

2013-07-15T23:59:59.000Z

180

Advanced CdTe Photovoltaic Technology: September 2007 - March 2009  

SciTech Connect (OSTI)

During the last eighteen months, Abound Solar (formerly AVA Solar) has enjoyed significant success under the SAI program. During this time, a fully automated manufacturing line has been developed, fabricated and commissioned in Longmont, Colorado. The facility is fully integrated, converting glass and semiconductor materials into complete modules beneath its roof. At capacity, a glass panel will enter the factory every 10 seconds and emerge as a completed module two hours later. This facility is currently undergoing trials in preparation for large volume production of 120 x 60 cm thin film CdTe modules. Preceding the development of the large volume manufacturing capability, Abound Solar demonstrated long duration processing with excellent materials utilization for the manufacture of high efficiency 42 cm square modules. Abound Solar prototype modules have been measured with over 9% aperture area efficiency by NREL. Abound Solar demonstrated the ability to produce modules at industry leading low costs to NREL representatives. Costing models show manufacturing costs below $1/Watt and capital equipment costs below $1.50 per watt of annual manufacturing capacity. Under this SAI program, Abound Solar supported a significant research and development program at Colorado State University. The CSU team continues to make progress on device and materials analysis. Modeling for increased device performance and the effects of processing conditions on properties of CdTe PV were investigated.

Barth, K.

2011-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "te rm te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Electrolyte electroreflectance study of laser annealing effects on the CdTe/Hg0.8Cd0.2Te (111) system  

Science Journals Connector (OSTI)

We have investigated the effects of laser annealing on the CdTe/Hg0.8Cd0.2Te?(111) system by measuring the electrolyte electroreflectance (EER) spectra from both the CdTe layer as well as the interface region. The sample was a Hg0.8Cd0.2Te?(111) single crystal with a 500?Å?thick polycrystallineCdTefilmdeposited on it; a section of the interface was annealed using the neodymium: yttrium aluminum garnet (Nd:YAG) laser 1.06??m line. Our observations indicate the presence of strain due to lattice mismatch at the interface; laser annealing relieves this strain. In addition the annealing also causes the diffusion of Hg ions from the interfacial region into the passivant layer. The changes in the line shapes of the EER spectra also show an improvement in the crystalline quality of the passivant layer.

P. M. Amirtharaj; Fred H. Pollak; J. R. Waterman; P. R. Boyd

1982-01-01T23:59:59.000Z

182

Superficies y Vaco 12, 16-19, Junio 2001 Sociedad Mexicana de Ciencia de Superficies y de Vaco. Near-IR bandgap engineering employing the alloy (CdTe)x(In2Te3)1-x  

E-Print Network [OSTI]

the closed space vapor transport technique combined with free evaporation. As sources we employed CdTe and In thin films 1. Introduction CdTe and its alloys are versatile optoelectronic materials, some of 1.19 eV and 1.15 eV have been reported [5, 6], suggest the use of the compounds In2Te3 and CdTe

Meléndez Lira, Miguel Angel

183

New limits on the $?^{+}$EC and ECEC processes in $^{120}$Te  

E-Print Network [OSTI]

New limits on the double beta processes for $^{120}$Te have been obtained using a 400 cm$^3$ HPGe detector and a source consisting of natural Te0$_2$ powder. At a confidence level of 90% the limits are $0.19\\times 10^{18}$ y for the $\\beta^+$EC$(0\

A S Barabash; F Hubert; Ph Hubert; V Umatov

2007-03-13T23:59:59.000Z

184

A Proposal of the Method for Energy Measurements of Muons over 10 TeV  

Science Journals Connector (OSTI)

......energy determination method of high energy muons, which is based upon an observation...TeV. The uncertainty of the muon energy to be measured can be reduced if...the Editor paratus when a high energy muon in TeV region traverses through......

Tomonori Wada; Takashi Kitamura

1969-06-01T23:59:59.000Z

185

Photocurrent Mapping of 3D CdSe/CdTe Windowless Solar Cells  

Science Journals Connector (OSTI)

Photocurrent Mapping of 3D CdSe/CdTe Windowless Solar Cells ... back contact; CdSe; CdTe; photovoltaic; 3D solar cells; SPCM ... Scanning photocurrent microscopy (SPCM) has been used to evaluate the local performance of solar cells by scanning a finely focused optical beam across the surface while monitoring device response. ...

Carlos M. Hangarter; Ratan Debnath; Jong Y. Ha; Mehmet A. Sahiner; Christopher J. Reehil; William A. Manners; Daniel Josell

2013-08-22T23:59:59.000Z

186

Unravelling the atomic structure of AgInSbTe phase change materials: Theoretical perspective  

E-Print Network [OSTI]

E*PCOS2011 Unravelling the atomic structure of AgInSbTe phase change materials: Theoretical-GST. Key words: phase change materials, Ag/In/Sb/Te alloys, density functional, molecular dynamics 1. INTRODUCTION Phase change (PC) materials are chalcogenide alloys that switch very rapidly between the amorphous

187

Search for Short Duration Bursts of TeV Gamma Rays with the Milagrito Telescope  

E-Print Network [OSTI]

OG 2.3.07 Search for Short Duration Bursts of TeV Gamma Rays with the Milagrito Telescope Gus for short duration bursts of TeV photons. Such bursts may result from "traditional" gamma-ray bursts to gamma-ray bursts, the final stages of black hole evaporation) the most compelling reason may

California at Santa Cruz, University of

188

Unusual Otto excitation dynamics and enhanced coupling of light to TE plasmons in graphene  

E-Print Network [OSTI]

Unusual Otto excitation dynamics and enhanced coupling of light to TE plasmons in graphene Daniel R are a unique and unusual aspect of graphene's plasmonic response that are predicted to manifest when the sign plasmons in graphene. We show that TE plasmons supported by graphene in an Otto configuration unusually

Park, Namkyoo

189

Development of Nanostructures in Thermoelectric Pb-Te-Sb Alloys , L. A. Collins2  

E-Print Network [OSTI]

in the figure of merit of thermoelectric materials. Fabrication of nanostructured thermoelectric materials via the discovery of materials with a high thermoelectric figure of merit, zT, defined as S2 T/, where immiscible thermoelectric materials: PbTe-Sb2Te3. This ternary system was selected for investigation because

190

Bandgap engineering of CdxZn1xTe nanowires Keivan Davami,a  

E-Print Network [OSTI]

junction. These structures have been used in solar cells2,3 and eld effect transistors.4 Alloy nanowires device fabrication. Alloy nano- wires in various systems have been used to construct solar cells into a furnace. In a set of trial experiments, ZnTe (99.99% Aldrich) and CdTe (99.99% Aldrich) source powders

Cuniberti, Gianaurelio

191

Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition  

SciTech Connect (OSTI)

CdTe thin film has been grown by metalorganic chemical vapor deposition (MOCVD) on Ni(100) substrate. Using x-ray pole figure measurements we observed the epitaxial relationship of {111}CdTe// {001}Ni with [110]CdTe//[010]Ni and [112] CdTe//[100]Ni. The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 0.7% in the [110] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction (EBSD) images show that the CdTe domains are 30 degrees orientated from each other.

GIARE, C [Rensselaer Polytechnic Institute (RPI); RAO, S [Rensselaer Polytechnic Institute (RPI); RILEY, M [Rensselaer Polytechnic Institute (RPI); CHEN, L [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; BHAT, I [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI); WANG, G [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

192

ZnO/Sn:In2O3 and ZnO/CdTe band offsets for extremely thin absorber...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ZnOSn:In2O3 and ZnOCdTe band offsets for extremely thin absorber photovoltaics . ZnOSn:In2O3 and ZnOCdTe band offsets for extremely thin absorber photovoltaics . Abstract: Band...

193

Band gap of CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals  

SciTech Connect (OSTI)

The band gap E{sub g} of the CdTe and Cd{sub 0.9}Zn{sub 0.1}Te crystals and its temperature dependence are determined by optical methods. This is motivated by considerable contradictoriness of the published data, which hampers the interpretation and calculation of characteristics of detectors of X-ray and {gamma} radiation based on these materials (E{sub g} = 1.39-1.54 and 1.51-1.6 eV for CdTe and Cd{sub 0.9}Zn{sub 0.1}Te, respectively). The used procedure of determination of E{sub g} is analyzed from the viewpoint of the influence of the factors leading to inaccuracies in determination of its value. The measurements are performed for well-purified high-quality samples. The acquired data for CdTe (E{sub g} = 1.47-1.48 eV) and Cd{sub 0.9}Zn{sub 0.1}Te (E{sub g} = 1.52-1.53 eV) at room temperature substantially narrow the range of accurate determination of E{sub g}.

Kosyachenko, L. A., E-mail: lakos@chv.ukrpact.net; Sklyarchuk, V. M.; Sklyarchuk, O. V.; Maslyanchuk, O. L. [Chernovtsy National University (Ukraine)

2011-10-15T23:59:59.000Z

194

Phase formation and phase transformations in Bi-Te films with nanoscale thickness  

SciTech Connect (OSTI)

The processes of phase formation are studied in a binary Bi-Te system using the kinematic electron diffraction technique. It is established that, in the case of both simultaneous and layer-by-layer deposition of bismuth and tellurium and irrespective of the order of their deposition, phases with compositions Bi{sub 2}Te{sub 3} and BiTe are formed at the condensation plane in the amorphous and crystalline state, respectively. The amorphous Bi{sub 2}Te{sub 3} phase is stable at room temperature and crystallizes at a temperature of 423 K. It is shown that ordering of the phase BiTe is not a consequence of atomic order of the structure; rather, it is caused by the real structure of the object (by blocks)

Akhmedov, K. M. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)], E-mail: axmedovqurban@rambler.ru

2008-09-15T23:59:59.000Z

195

Growth of CdTe thin films on graphene by close-spaced sublimation method  

SciTech Connect (OSTI)

CdTe thin films grown on bi-layer graphene were demonstrated by using the close-spaced sublimation method, where CdTe was selectively grown on the graphene. The density of the CdTe domains was increased with increasing the number of the defective sites in the graphene, which was controlled by the duration of UV exposure. The CdTe growth rate on the bi-layer graphene electrodes was 400?nm/min with a bandgap energy of 1.45–1.49?eV. Scanning electron microscopy, micro-Raman spectroscopy, micro-photoluminescence, and X-ray diffraction technique were used to confirm the high quality of the CdTe thin films grown on the graphene electrodes.

Jung, Younghun; Yang, Gwangseok; Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Chun, Seungju; Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2013-12-02T23:59:59.000Z

196

Cd-rich and Te-rich low-temperature photoluminescence in cadmium telluride  

SciTech Connect (OSTI)

Low-temperature photoluminescence emission spectra were measured in cadmium telluride (CdTe) samples in which composition was varied to promote either Cd or Te-rich stoichiometry. The ability to monitor stoichiometry is important, since it has been shown to impact carrier recombination. Te-rich samples show transitions corresponding to acceptor-bound excitons (?1.58?eV) and free-electron to acceptor transitions (?1.547?eV). In addition to acceptor-bound excitons, Cd-rich samples show transitions assigned to donor-bound excitons (1.591?eV) and Te vacancies at 1.552?eV. Photoluminescence is a noninvasive way to monitor stoichiometric shifts induced by post-deposition anneals in polycrystalline CdTe thin films deposited by close-spaced sublimation.

Albin, D. S., E-mail: david.albin@nrel.gov; Kuciauskas, D.; Ma, J.; Metzger, W. K.; Burst, J. M.; Moutinho, H. R.; Dippo, P. C. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2014-03-03T23:59:59.000Z

197

TenTen: A New Array of Multi-TeV Imaging Cherenkov Telescopes  

E-Print Network [OSTI]

The exciting results from H.E.S.S. point to a new population of gamma-ray sources at energies E > 10 TeV, paving the way for future studies and new discoveries in the multi-TeV energy range. Connected with these energies is the search for sources of PeV cosmic-rays (CRs) and the study of multi-TeV gamma-ray production in a growing number of astrophysical environments. TenTen is a proposed stereoscopic array (with a suggested site in Australia) of modest-sized (10 to 30m^2) Cherenkov imaging telescopes with a wide field of view (8 to 10deg diameter) optimised for the E~10 to 100 TeV range. TenTen will achieve an effective area of ~10 km^2 at energies above 10 TeV. We outline here the motivation for TenTen and summarise key performance parameters.

Rowell, G; Clay, R; Dawson, B; Denman, J; Protheroe, R; Smith, A G K; Thornton, G; Wild, N

2007-01-01T23:59:59.000Z

198

TenTen: A New Array of Multi-TeV Imaging Cherenkov Telescopes  

E-Print Network [OSTI]

The exciting results from H.E.S.S. point to a new population of gamma-ray sources at energies E > 10 TeV, paving the way for future studies and new discoveries in the multi-TeV energy range. Connected with these energies is the search for sources of PeV cosmic-rays (CRs) and the study of multi-TeV gamma-ray production in a growing number of astrophysical environments. TenTen is a proposed stereoscopic array (with a suggested site in Australia) of modest-sized (10 to 30m^2) Cherenkov imaging telescopes with a wide field of view (8 to 10deg diameter) optimised for the E~10 to 100 TeV range. TenTen will achieve an effective area of ~10 km^2 at energies above 10 TeV. We outline here the motivation for TenTen and summarise key performance parameters.

G. Rowell; V. Stamatescu; R. Clay; B. Dawson; J. Denman; R. Protheroe; A. G. K. Smith; G. Thornton; N. Wild

2007-10-10T23:59:59.000Z

199

V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny Service and  

Broader source: Energy.gov (indexed) [DOE]

3: Cisco TelePresence TC and TE Bugs Let Remote Users Deny 3: Cisco TelePresence TC and TE Bugs Let Remote Users Deny Service and Remote Adjacent Authenticated Users Gain Root Shell Access V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny Service and Remote Adjacent Authenticated Users Gain Root Shell Access June 21, 2013 - 6:00am Addthis PROBLEM: Three vulnerabilities were reported in Cisco TelePresence TC and TE PLATFORM: The following product models are affected by the vulnerabilities: Cisco TelePresence MX Series Cisco TelePresence System EX Series Cisco TelePresence Integrator C Series Cisco TelePresence Profiles Series running Cisco TelePresence Quick Set Series Cisco IP Video Phone E20 ABSTRACT: Cisco TelePresence TC and TE Software contain two vulnerabilities in the implementation of the Session Initiation Protocol (SIP) that could allow an

200

CdTe Feedstock Development and Validation: Cooperative Research and Development Final Report, CRADA Number CRD-08-00280  

SciTech Connect (OSTI)

The goal of this work was to evaluate different CdTe feedstock formulations (feedstock provided by Redlen) to determine if they would significantly improve CdTe performance with ancillary benefits associated with whether changes in feedstock would affect CdTe cell processing and possibly reliability of cells. Feedstock also included attempts to intentionally dope the CdTe with pre-selected elements.

Albin, D.

2011-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "te rm te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Investigation of Junction Properties of CdS/CdTe Solar Cells and their Correlation to Device Properties (Presentation)  

SciTech Connect (OSTI)

The objective of the Junction Studies are: (1) understand the nature of the junction in the CdTe/CdS device; (2) correlate the device fabrication parameters to the junction formation; and (3) develop a self consistent device model to explain the device properties. Detailed analysis of CdS/CdTe and SnO{sub 2}/CdTe devices prepared using CSS CdTe is discussed.

Dhere, R. G.; Zhang, Y.; Romero, M. J.; Asher, S. E.; Young, M.; To, B.; Noufi, R.; Gessert, T. A.

2008-05-01T23:59:59.000Z

202

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa  

E-Print Network [OSTI]

HIGH EFFICIENCY CdTe/CdS THIN FILM SOLAR CELLS WITH A NOVEL BACK-CONTACT Nicola Romeoa , Alessio in the fabrication of high efficiency CdTe/CdS thin film solar cells. Usually, it is done first by etching the Cd: Back Contact, CdTe, Thin Film 1 INTRODUCTION The back contact in the CdTe/CdS thin film solar cell

Romeo, Alessandro

203

OPTIMIZATION OF GRADED BAND GAP CdHgTe SOLAR CELLS A. BOUAZZI (*), Y. MARFAING and J. MIMILA-ARROYO  

E-Print Network [OSTI]

limited to 6 % in Cu2Te/CdTe junctions [4, 5], 7.9 % in CdS/CdTe heterojunctions and 6 % in homojunc with uniform doping followed by a base region with uni- form gap and doping. Our goal is to find the optimum

Boyer, Edmond

204

PHONONS-DEFECTS INTERACTIONS IN CdTe J. L. TISSOT, P. L. VUILLERMOZ and A. LAUGIER  

E-Print Network [OSTI]

267 PHONONS-DEFECTS INTERACTIONS IN CdTe J. L. TISSOT, P. L. VUILLERMOZ and A. LAUGIER Laboratoire Einstein, 69621 Villeurbanne Cedex, France Résumé. 2014 Les défauts électriquement inactifs dans CdTe ont of electrically inactive defects has been performed on CdTe single crystals by two different experimental

Boyer, Edmond

205

Interference effects in photoreflectance and contactless electroreflectance spectra of CdTe films grown on Si substrate  

E-Print Network [OSTI]

Interference effects in photoreflectance and contactless electroreflectance spectra of CdTe films and contactless electroreflectance CER spectra of CdTe films grown on Si substrate, at energies below the band gap of CdTe. The simultaneous observation of OF in the reflectance (R) spectrum having the same period

Ghosh, Sandip

206

PHYSICAL REVIEW B 84, 205305 (2011) Spin-phonon coupling in single Mn-doped CdTe quantum dot  

E-Print Network [OSTI]

PHYSICAL REVIEW B 84, 205305 (2011) Spin-phonon coupling in single Mn-doped CdTe quantum dot C. L dynamics of a single Mn atom in a laser driven CdTe quantum dot is addressed theoretically. Recent of single Mn-doped CdTe dots, information about the quantum spin state of a single Mn atom is extracted from

Paris-Sud XI, Université de

207

Quantifying electron-phonon coupling in CdTe12xSex nanocrystals via coherent phonon manipulation  

E-Print Network [OSTI]

Quantifying electron-phonon coupling in CdTe12xSex nanocrystals via coherent phonon manipulation B to manipulate coherent phonon excitation and quantify the strength of electron-phonon coupling in CdTe1Ã?xSex nanocrystals (NCs). Raman active CdSe and CdTe longitudinal optical phonon (LO) modes are excited and probed

Xu, Xianfan

208

Effect of Shunts on Thin-Film CdTe Module Performance. Galymzhan T. Koishiyev, James R. Sites  

E-Print Network [OSTI]

Effect of Shunts on Thin-Film CdTe Module Performance. Galymzhan T. Koishiyev, James R. Sites circuit model is used to analyze the impact of shunts on basic performance parameters of a CdTe thin with each other in their effect on the module. To address these questions, a 2-D circuit model of a CdTe

Sites, James R.

209

CdTe EPITAXIAL FILMS AND THEIR PROPERTIES S. N. MAXIMOVSKY, I. P. REVOCATOVA, V. M. SALMAN,  

E-Print Network [OSTI]

161 CdTe EPITAXIAL FILMS AND THEIR PROPERTIES S. N. MAXIMOVSKY, I. P. REVOCATOVA, V. M. SALMAN, M CdTe films of p and n type conductivity with a given devia- tion of film composition from PHYSIQUE APPLIQUÃ?E TOME 12, FÃ?VRIER 1977, PAGE 161 The design of reliable CdTe nuclear radiation counters

Paris-Sud XI, Université de

210

Post-Synthesis Crystallinity Tailoring of Water-Soluble Polymer Encapsulated CdTe Nanoparticles using Rapid Thermal Annealing  

E-Print Network [OSTI]

Post-Synthesis Crystallinity Tailoring of Water-Soluble Polymer Encapsulated CdTe Nanoparticles The crystallinity of colloidal CdTe nanoparticles has been enhanced post synthesis. This control over CdTe NPs have been demonstrated suitable for use in applications involving efficient solar cells

211

A SMALL PORTABLE DETECTOR HEAD USING MIS-CONTACTED CdTe FOR X-RAY SPECTROMETRY  

E-Print Network [OSTI]

339 A SMALL PORTABLE DETECTOR HEAD USING MIS-CONTACTED CdTe FOR X-RAY SPECTROMETRY P. EICHINGER for semiconductor radiation detectors is discussed. A versatile head consisting of a 2 mm thick, 10 mm diameter CdTe and its applica- tion to CdTe and CdS has already been published [2, 3], but because of the many

Paris-Sud XI, Université de

212

Substrate effect on CdTe layers grown by metalorganic vapor phase N. V. Sochinskiia),b)  

E-Print Network [OSTI]

Substrate effect on CdTe layers grown by metalorganic vapor phase epitaxy N. V. Sochinskiia for publication 30 December 1996 CdTe layers were grown by metalorganic vapor phase epitaxy MOVPE on different substrates like sapphire, GaAs, and CdTe wafers. The growth was carried out at the temperature 340 °C

Viña, Luis

213

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-film CdTe Caroline R. Corwine,1  

E-Print Network [OSTI]

Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-film CdTe Caroline R. Corwine Laboratory, Golden, CO 80401 ABSTRACT Polycrystalline thin-film CdTe is one of the leading materials used various process steps alter defect states in the CdTe layer. Low-temperature photoluminescence (PL

Sites, James R.

214

CARRIER TRANSPORT AND TRAPPING PROCESS IN HIGH-RESISTIVITY CdTe GROWN BY A MODIFIED THM  

E-Print Network [OSTI]

189 CARRIER TRANSPORT AND TRAPPING PROCESS IN HIGH-RESISTIVITY CdTe GROWN BY A MODIFIED THM T, PAGE 189 1. Introduction. - Recent results of studies on carrier transport in high-purity CdTe crystals current measure- ments. This paper discusses trapping and detrapping effects in high-resistivity CdTe

Paris-Sud XI, Université de

215

Micron-Resolution Photocurrent of CdTe Solar Cells Using Multiple Wavelengths Jason F. Hiltner1  

E-Print Network [OSTI]

Micron-Resolution Photocurrent of CdTe Solar Cells Using Multiple Wavelengths Jason F. Hiltner1 variations in the quantum efficiency near the CdTe band gap, which track intermixing of Cd wavelengths with energies near and slightly below the CdTe band gap (1.5 eV) to be used. Temperature tuning

Sites, James R.

216

Paul Sellin, Centre for Nuclear and Radiation Physics Charge transport and mobility mapping in CdTe  

E-Print Network [OSTI]

Paul Sellin, Centre for Nuclear and Radiation Physics Charge transport and mobility mapping in CdTe, JAP 92 (2002) 3198-3206 Introduction Motivation for this Work: r THM-grown CdTe supplied by Eurorad signal response? r Pulse shape analysis can identify regions of trapping or reduced mobility r Does CdTe

Sellin, Paul

217

ATLAS SUSY search prospects at 10 TeV  

E-Print Network [OSTI]

The search for physics beyond the Standard Model (BSM) is one of the most important goals for the general purpose detector ATLAS at the Large Hadron Collider at CERN. Already with early LHC data, the ATLAS experiment should be sensitive to discover physics beyond the Standard Model. This paper summarizes the prospects of the ATLAS experiment to find experimental evidence for Supersymmetry (SUSY) and Universal Extra Dimensions (UED) in channels with jets, leptons and missing transverse energy for an integrated luminosity of L = 200pb-1 at a centre-of-mass energy sqrt s = 10 TeV. Only a selection of the results is presented focussing on the the discovery reach for inclusive searches.

Janet Dietrich

2009-10-29T23:59:59.000Z

218

Robust Lower Bounds on Intergalactic Magnetic Fields from Simultaneously Observed GeV-TeV Light Curves of the Blazar Mkn 501  

E-Print Network [OSTI]

We derive model-independent lower bounds on intergalactic magnetic fields from upper limits on the pair echo emission from the blazar Mkn 501, that is, delayed GeV emission from secondary electron-positron pairs produced via interactions of primary TeV gamma rays with the cosmic infrared background. We utilize only simultaneously observed GeV-TeV light curves during the flaring activity in 2009 obtained by VERITAS, MAGIC and {\\it Fermi}-LAT. This leads to limits on the magnetic field strengths of $B \\gtrsim 10^{-19.5} {\\rm G}$ and $B \\gtrsim 10^{-19} {\\rm G}$, at 99% C.L. and 90% C.L., respectively, for a field coherence length of 1 kpc. Our analysis is firmly based on the observational data alone and does not depend on any assumptions concerning the primary TeV flux during unobserved periods. Thus, our evaluation of the flux of the pair echo is conservative and the deduced constraints are much more robust compared to previous studies.

Takahashi, Keitaro; Ichiki, Kiyotomo; Inoue, Susumu

2011-01-01T23:59:59.000Z

219

Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films  

SciTech Connect (OSTI)

Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2? = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (?E) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, ?. The value of n and k increases with the increase of substrate temperature.

Kumar, B. Rajesh, E-mail: rajphyind@gmail.com [Department of Physics, Sri Venkateswara University, Tirupati - 517 502, A.P, India and Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India); Hymavathi, B.; Rao, T. Subba [Department of Physics, Sri Krishnadevaraya University, Anantapur - 515 003, A.P (India)

2014-01-28T23:59:59.000Z

220

Simulation of relaxation times and energy spectra of the CdTe/Hg{sub 1-x}Cd{sub x}Te/CdTe quantum well for variable valence band offset, well width, and composition x  

SciTech Connect (OSTI)

The dependences of relaxation times and energy spectrum of the CdTe/Hg{sub 1-x}Cd{sub x}Te/CdTe quantum well (QW) on its parameters were simulated in the cadmium molar fraction range 0 < x < 0.16. It was found that the x increase from 0 to 0.16 changes electron wave function localization in the QW. A criterion for determining the number of interface levels of localized electrons depending on QW parameters was obtained. The effect of a sharp (by two orders of magnitude) increase in the relaxation time of localized electrons was detected at small QW widths and x close to 0.16.

Melezhik, E. O., E-mail: emelezhik@gmail.com; Gumenjuk-Sichevska, J. V.; Sizov, F. F. [National Academy of Sciences, Lashkariev Institute of Semiconductor Physics (Ukraine)

2010-10-15T23:59:59.000Z

Note: This page contains sample records for the topic "te rm te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Effect of low energy ion irradiation on CdTe crystals: Luminescence enhancement  

SciTech Connect (OSTI)

In this work we show that low energy ion sputtering is a very efficient technique as a cleaning process for CdTe substrates. We demonstrate, by using several techniques like grazing-angle x-ray diffraction, cathodoluminescence, microluminescence, and micro-Raman spectroscopy that the luminescent properties of CdTe substrates can be very much increased when CdTe surfaces are irradiated with low energy Argon ions. We postulate that this enhancement is mainly due to the removal of surface damage induced by the cutting and polishing processes. The formation of a low density of nonluminescent aggregates after the sputtering process has also been observed.

Olvera, J.; Plaza, J. L.; Dios, S. de; Dieguez, E. [Departamento de Fisica de Materiales, Laboratorio de Crecimiento de Cristales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Martinez, O.; Avella, M. [Departamento Fisica Materia Condensada, GdS-Optronlab Group, Universidad de Valladolid, Edificio I-D, Paseo de Belen 1, 47011 Valladolid (Spain)

2010-12-15T23:59:59.000Z

222

Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe  

SciTech Connect (OSTI)

The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.

Gessert, T. A.

2012-01-01T23:59:59.000Z

223

Search for Neutral Heavy Leptons in the NuTeV Experiment at Fermilab  

E-Print Network [OSTI]

Preliminary results from a search for neutral heavy leptons in the NuTeV experiment at Fermilab. The upgraded NuTeV neutrino detector for the 1996-1997 run included an instrumented decay region for the NHL search which, combined with the NuTeV calorimeter, allows detection in several decay modes (mu-mu-nu, mu-e-nu, mu-pi, e-pi, and e-e-nu). We see no evidence for neutral heavy leptons in our current search in the mass range from 0.3 GeV to 2.0 GeV decaying into final states containing a muon.

NuTeV Collaboration; R. B. Drucker

1998-11-23T23:59:59.000Z

224

Jet-track correlations in PbPb collisions at 2.76 TeV  

E-Print Network [OSTI]

Medium-induced changes to charged particle correlations associated with high momentum jets in PbPb collisions are explored by comparing such measurements to pp reference data. This jet-track correlation analysis uses data sets from PbPb and pp collisions with integrated luminosities of 166 $\\mu \\rm{b}^{-1}$ and 5.3 pb$^{-1}$, respectively, collected in 2011 and 2013 at collision energies of $\\sqrt{s_{NN}} = 2.76$~TeV. The detailed angular distributions of all charged particles are studied as a function of $\\Delta\\eta$ and $\\Delta\\phi$ with respect to the jet axis, which provides a greater sensitivity to medium-induced modifications than has been achieved in previous measurements. Two jet samples are considered: an inclusive sample of high momentum jets, and a sample of dijets for which correlations to both leading and subleading jet axes are studied. Modifications of the correlated particle distributions are apparent in both relative pseudorapidity and relative azimuthal angle, and are found to extend to larg...

CMS Collaboration

2015-01-01T23:59:59.000Z

225

The TE Wave Transmission Method for Electron Cloud Measurements at Cesr-TA  

E-Print Network [OSTI]

CLOUD MEASUREMENTS AT CESR-TA* S. De Santis # , J. Byrd,Wave measurements at the Cesr-TA ring at Cornell University.CBP-836 THE TE WAVE TRANSMISSION METHOD FOR

Desantis, S.

2010-01-01T23:59:59.000Z

226

Energy spectrum of cosmic ray muons above 10 TeV according to BUST data  

Science Journals Connector (OSTI)

The energy spectrum of cosmic ray muons in the range of several TeV to ... obtained through the analysis of multiple interactions of muons (the pair meter technique) in the ... are compared with prior BUST data o...

A. G. Bogdanov; R. P. Kokoulin…

2011-03-01T23:59:59.000Z

227

TeV scale left-right symmetry with spontaneous D-parity breaking  

SciTech Connect (OSTI)

The different scenarios of spontaneous breaking of D parity have been studied in both the nonsupersymmetric and the supersymmetric version of the left-right symmetric models (LRSM). We explore the possibility of a TeV scale SU(2){sub R} breaking scale M{sub R} and hence TeV scale right-handed neutrinos from both minimization of the scalar potential as well as the coupling constant unification point of view. We show that, although minimization of the scalar potential allows the possibility of a TeV scale M{sub R} and tiny neutrino masses in LRSM with spontaneous D-parity breaking, the gauge coupling unification at a high scale {approx}10{sup 16} GeV does not favor a TeV scale symmetry breaking except in the supersymmetric left-right model with Higgs doublet and bidoublet. The phenomenology of neutrino mass is also discussed.

Borah, Debasish [Indian Institute of Technology Bombay, Mumbai-400076 (India); Patra, Sudhanwa; Sarkar, Utpal [Physical Research Laboratory, Ahmedabad-380009 (India)

2011-02-01T23:59:59.000Z

228

Molybdenum Nitride Films in the Back Contact Structure of Flexible Substrate CdTe Solar Cells.  

E-Print Network [OSTI]

??CdTe solar cells in the superstrate configuration have achieved record efficiencies of 16% but those in the substrate configuration have reached efficiencies of only 7.8%.… (more)

Guntur, Vasudha

2011-01-01T23:59:59.000Z

229

Optical properties of single ZnTe nanowires grown at low temperature  

SciTech Connect (OSTI)

Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature (350 °C) under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per ?m{sup 2}). The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are <111> oriented. Low temperature micro-photoluminescence and cathodoluminescence experiments have been performed on single nanowires. We observe a narrow emission line with a blue-shift of 2 or 3 meV with respect to the exciton energy in bulk ZnTe. This shift is attributed to the strain induced by a 5 nm-thick oxide layer covering the nanowires, and this assumption is supported by a quantitative estimation of the strain in the nanowires.

Artioli, A.; Stepanov, P.; Den Hertog, M.; Bougerol, C.; Genuist, Y.; Donatini, F.; André, R.; Nogues, G.; Tatarenko, S.; Ferrand, D.; Cibert, J. [Inst NEEL, Universiy of Grenoble Alpes, F-38042 Grenoble (France) [Inst NEEL, Universiy of Grenoble Alpes, F-38042 Grenoble (France); Inst NEEL, CNRS, F-38042 Grenoble (France); Rueda-Fonseca, P. [Inst NEEL, Universiy of Grenoble Alpes, F-38042 Grenoble (France) [Inst NEEL, Universiy of Grenoble Alpes, F-38042 Grenoble (France); Inst NEEL, CNRS, F-38042 Grenoble (France); INAC, CEA and Université de Grenoble, 17 rue des Martyrs, 38054 Grenoble (France); Bellet-Amalric, E.; Kheng, K. [INAC, CEA and Université de Grenoble, 17 rue des Martyrs, 38054 Grenoble (France)] [INAC, CEA and Université de Grenoble, 17 rue des Martyrs, 38054 Grenoble (France)

2013-11-25T23:59:59.000Z

230

UNIVERSITY OF CALIFORNIA, TeV Energy Spectra of the Crab Nebula, Mrk 421 and  

E-Print Network [OSTI]

UNIVERSITY OF CALIFORNIA, IRVINE TeV Energy Spectra of the Crab Nebula, Mrk 421 and the Cygnus . . . . . . . . . . . . . . . . . . . . 2 i Cosmic Rays . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ii The Search for the Origin with Milagro . . . . . . . . . . . . . . . . . . . . . 69 IVThe Milagro Energy Reconstruction Algorithm 73 I

California at Santa Cruz, University of

231

V-183: Cisco TelePresence TC and TE Bugs Let Remote Users Deny...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Cisco TelePresence Profiles Series running Cisco TelePresence Quick Set Series Cisco IP Video Phone E20 ABSTRACT: Cisco TelePresence TC and TE Software contain two vulnerabilities...

232

Collimation and Radiative Deceleration of Jets in TeV AGNs  

E-Print Network [OSTI]

We consider some implications of the rapid X-ray and TeV variability observed in M87 and the TeV blazars. We outline a model for jet focusing and demonstrate that modest radiative cooling can lead to recollimation of a relativistic jet in a nozzle having a very small cross-sectional radius. Such a configuration can produce rapid variability at large distances from the central engine and may explain recent observations of the HST-1 knot in M87. Possible applications of this model to TeV blazars are discussed. We also discuss a scenario for the very rapid TeV flares observed with HESS and MAGIC in some blazars, that accommodates the relatively small Doppler factors inferred from radio observations.

Amir Levinson; Omer Bromberg

2007-12-17T23:59:59.000Z

233

p-CdTe/n-CdS photovoltaic cells in the substrate configuration.  

E-Print Network [OSTI]

??In this thesis, p-CdTe/n-CdS solar cells in the substrate configuration have been studied. The focus is on device fabrication, performance optimization, and the development of… (more)

Wu, Hsiang Ning (1984 - )

2014-01-01T23:59:59.000Z

234

Development of high efficieny CdTe thin-film solar cell.  

E-Print Network [OSTI]

??CdTe films were deposited by sputtering technique and were then carried out by CdCl2 treatment. The SEM micrographs show that the grain sizes of the… (more)

Huang, Yein-rein

2011-01-01T23:59:59.000Z

235

Stability Issues in Sputtered CdS/CdTe Solar Cells.  

E-Print Network [OSTI]

?? Magnetron sputtering is a well-established thin-film deposition technique which is particularly well-suited for sub-micron layers. We use this method to deposit ultra-thin CdS/CdTe layers… (more)

Paudel, Naba Raj

2011-01-01T23:59:59.000Z

236

Studies of sputtered CdTe and CdSe solar cells.  

E-Print Network [OSTI]

??CdTe has recently become the most commercially successful polycrystalline thin filmsolar module material. Its low cost, large-area solar module is reshaping the silicondominatedsolar panel market;… (more)

Kwon, Dohyoung

2012-01-01T23:59:59.000Z

237

Development of CdTe thin film solar cells on flexible foil substrates.  

E-Print Network [OSTI]

??Cadmium telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal band gap of 1.45 eV, its high optical absorption… (more)

Hodges, Deidra Ranel

2009-01-01T23:59:59.000Z

238

CdTe/CdS Thin Film Solar Cells Fabricated on Flexible Substrates.  

E-Print Network [OSTI]

??Cadmium Telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal bandgap of 1.45 eV and its high optical absorption… (more)

Palekis, Vasilios

2011-01-01T23:59:59.000Z

239

Photoluminescence and Extended X-ray Absorption Fine Structure Studies on CdTe Material.  

E-Print Network [OSTI]

??The direct-band-gap semiconductor CdTe is an important material for fabricating high efficiency, polycrystalline thin-film solar cells in a heterojunction configuration. The outstanding physical properties of… (more)

Liu, Xiangxin

2006-01-01T23:59:59.000Z

240

Electron-reflector strategy for CdTe thin-film solar cells.  

E-Print Network [OSTI]

??The CdTe thin-film solar cell has a large absorption coefficient and high theoretical efficiency. Moreover, large-area photovoltaic panels can be economically fabricated. These features potentially… (more)

Hsiao, Kuo-Jui

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "te rm te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Approaches to fabricating high-efficiency ultra-thin CdTe solar cells.  

E-Print Network [OSTI]

??This thesis is an investigation of the fabrication, characterization and performance of high-efficiency and ultra-thin CdTe solar cells with an aim of reducing the material… (more)

Xia, Wei (1981 - )

2013-01-01T23:59:59.000Z

242

Room temperature ferromagnetism in Co defused CdTe nanocrystalline thin films  

SciTech Connect (OSTI)

Nanocrystalline Co defused CdTe thin films were prepared using electron beam evaporation technique by depositing CdTe/Co/CdTe stacked layers with different Co thickness onto glass substrate at 373 K followed by annealing at 573K for 2 hrs. Structural, morphological and magnetic properties of of all the Co defused CdTe thin films has been investigated. XRD pattern of all the films exhibited zinc blende structure with <111> preferential orientation without changing the crystal structure of the films. The grain size of the films increased from 31.5 nm to 48.1 nm with the increase of Co layer thickness from 25nm to 100nm. The morphological studies showed that uniform texture of the films and the presence of Co was confirmed by EDAX. Room temperature magnetization curves indicated an improved ferromagnetic behavior in the films with increase of the Co thickness.

Rao, N. Madhusudhana; Kaleemulla, S.; Begam, M. Rigana [Materials Physics Division, School of Advanced Sciences, VIT University, Vellore - 632 014 (India)

2014-04-24T23:59:59.000Z

243

Shunt Passivation Process for CdTe Solar Cell - New Post Deposition Technique.  

E-Print Network [OSTI]

?? A cadmium sulfide / cadmium telluride (CdS/CdTe) solar cell consists of thedevice stack: Glass substrate / SnO2:F (TCO, transparent conductive oxide) / CdS (n-type… (more)

Tessema, Misle Mesfin

2009-01-01T23:59:59.000Z

244

Effect of Cu doping on Hole Mobility in CdTe  

SciTech Connect (OSTI)

High quality CdTe thin films grown by laser deposition technique and heavily doped with Cu have recently been reported to have resistivity and hole mobility comparable to those of bulk single crystals. To explain the experimental results we have calculated the effect of Cu on the band structure and phonon spectrum of CdTe using the density functional theory (DFT) and the linearized augmented plane wave (LAPW) method. We found that the introduction of a high density of Cu can lead to a reduction in the hole-LO phonon scattering. In addition, Cu doping can remove Cd vacancies in CdTe and thereby enhance the hole mobility in CdTe.

Ma Zhixun; Mao, Samuel S. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Liu Lei; Yu, Peter Y. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Physics, University of California at Berkeley, Berkeley, CA 94720 (United States)

2010-01-04T23:59:59.000Z

245

Efficiency, Cost and Weight Trade-off in TE Power Generation System for Vehicle Exhaust Applications  

Broader source: Energy.gov [DOE]

It contains a detailed co-optimization of the thermoelectric module with the heat sink and a study of the tradeoff between the material cost and efficiency for the TE module and the heat sink. An optimum design is found.

246

The tin impurity in Bi0.5Sb1.5Te3 alloys  

Broader source: Energy.gov [DOE]

Extends work on tin to p-type thermoelectric alloys of formula Bi(2-x)Sb(x)Te(3) doped with Sn. Both single crystals and polycrystals prepared using powder metallurgical techniques are studied and properties reported.

247

TeC: end-user development of software systems for smart spaces  

Science Journals Connector (OSTI)

This paper presents TeC, a framework for end-user design, deployment, and evolution of applications for smart spaces. This work is motivated by the current gap between traditional software development approaches and end user desire to easily personalise and evolve their systems for smart spaces. TeC is precise enough to support the fully automated deployment of systems designed by end users, and it addresses important characteristics of ubiquitous computing, namely, the ability to describe dynamic adaptations and to relate system features to physical location and to the presence and identity of users. TeC is described by example, with four home automation systems concerning surveillance and energy management. The paper also discusses the implementation of the TeC middleware and preliminary evaluation concerning usability and engineering effort.

João P. Sousa; Daniel Keathley; Mong Le; Luan Pham; Daniel Ryan; Sneha Rohira; Samuel Tryon; Sheri Williamson

2011-01-01T23:59:59.000Z

248

Combined SIMS, AES and XPS Study of CdxHg1-xTe  

Science Journals Connector (OSTI)

The ternary compound CdxHg1_xTe is of great importance in infrared technology. The band gap of this material depends critically on the concentration x. Therefore, a detailed knowledge of the surface and bulk comp...

O. Ganschow; H. M. Nitz; L. Wiedmann…

1979-01-01T23:59:59.000Z

249

Aqueous Synthesis of Zinc Blende CdTe/CdS Magic-Core/Thick-Shell...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

CdTeCdS Magic-CoreThick-Shell Tetrahedral Shaped Nanocrystals with Emission Tunable to Near-Infrared Authors: Deng, Z., Schulz, O., Lin, S., Ding, B., Liu, X., Wei, X., Ros, R.,...

250

First results on neutrinoless double beta decay of Te-130 with the calorimetric cuoricino experiment  

E-Print Network [OSTI]

Evidence for Neutrinoless Double Beta Decay” arXiv:hep-on “Evidence for neutrinoless double beta decay”- arXiv:hep-Results on Neutrinoless Double Beta Decay of 130 Te with the

2003-01-01T23:59:59.000Z

251

Surveying The TeV Sky With Milagro G. P. Walker for the Milagro Collaboration  

E-Print Network [OSTI]

Surveying The TeV Sky With Milagro G. P. Walker for the Milagro Collaboration Los Alamos National been reported by the Milagro collaboration [5]. In this analysis, the emission is resolved into regions

California at Santa Cruz, University of

252

Synthesis, characterization and performance of Cd1xInxTe compound for solar cell applications  

E-Print Network [OSTI]

), Tebbin, P.O. Box 87 Helwan, Cairo 11412, Egypt b Department of Physics, University of Central Florida­vis­NIR spectrophotometer and band gap energy of 1.37 eV for Cd0.6In0.4Te was obtained. The best photovoltaic conversion efficiency of 1.89% was obtained for the Cd0.6In0.4Te sample with a short circuit current density (Jsc) of 15

Chow, Lee

253

Simultaneous TE{sub 1} and TE{sub 2} mode lasing yielding dual-wavelength oscillation in a semiconductor laser with a tunnel junction  

SciTech Connect (OSTI)

Dual-frequency oscillation is obtained and investigated in a new type of injection heterolaser, an interband two-stage cascade laser with a tunneling p-n junction separating two active regions with quantum wells located in a common waveguide. The laser design provides for simultaneous oscillation at the first-order TE mode of wavelength {lambda} = 1.086 {mu}m and the second-order TE mode of wavelength {lambda} = 0.96 {mu}m in the continuous-wave regime at room temperature.

Aleshkin, V. Ya., E-mail: aleshkin@ipm.sci.nnov.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Babushkina, T. S.; Birykov, A. A. [Nizhni Novgorod State University, Physicotechnical Institute (Russian Federation); Dubinov, A. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N.; Kolesnikov, M. N.; Nekorkin, S. M. [Nizhni Novgorod State University, Physicotechnical Institute (Russian Federation)

2011-05-15T23:59:59.000Z

254

CATHODOLUMINESCENCE STUDIES OF THE 1.4 eV BANDS IN CdTe (*) C. B. NORRIS and C. E. BARNES  

E-Print Network [OSTI]

219 CATHODOLUMINESCENCE STUDIES OF THE 1.4 eV BANDS IN CdTe (*) C. B. NORRIS and C. E. BARNESV luminescence bands in nominally undoped, nominally stoichiometric CdTe and in donor-compensated, Te-rich CdTe.4 eV transitions in CdTe arose from the fact that this transition is of a more complex nature than

Paris-Sud XI, Université de

255

Optical Stark Effect and Dressed Exciton States in a Mn-Doped CdTe Quantum Dot C. Le Gall,1  

E-Print Network [OSTI]

Optical Stark Effect and Dressed Exciton States in a Mn-Doped CdTe Quantum Dot C. Le Gall,1 A spin in a CdTe QD, like the strain- induced magnetic anisotropy or hyperfine coupling to the nuclei in this study is grown on a ZnTe substrate and contains CdTe QDs. A 6.5 monolayer thick CdTe layer is deposited

Boyer, Edmond

256

DISCOVERY OF A NEW TeV GAMMA-RAY SOURCE: VER J0521+211  

SciTech Connect (OSTI)

We report the detection of a new TeV gamma-ray source, VER J0521+211, based on observations made with the VERITAS imaging atmospheric Cherenkov Telescope Array. These observations were motivated by the discovery of a cluster of >30 GeV photons in the first year of Fermi Large Area Telescope observations. VER J0521+211 is relatively bright at TeV energies, with a mean photon flux of (1.93 ± 0.13{sub stat} ± 0.78{sub sys}) × 10{sup –11} cm{sup –2} s{sup –1} above 0.2 TeV during the period of the VERITAS observations. The source is strongly variable on a daily timescale across all wavebands, from optical to TeV, with a peak flux corresponding to ?0.3 times the steady Crab Nebula flux at TeV energies. Follow-up observations in the optical and X-ray bands classify the newly discovered TeV source as a BL Lac-type blazar with uncertain redshift, although recent measurements suggest z = 0.108. VER J0521+211 exhibits all the defining properties of blazars in radio, optical, X-ray, and gamma-ray wavelengths.

Archambault, S. [Physics Department, McGill University, Montreal, QC H3A 2T8 (Canada); Arlen, T.; Aune, T. [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States); Behera, B.; Federici, S. [DESY, Platanenallee 6, D-15738 Zeuthen (Germany); Beilicke, M.; Buckley, J. H.; Bugaev, V. [Department of Physics, Washington University, St. Louis, MO 63130 (United States); Benbow, W. [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States); Bird, R. [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Bouvier, A. [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States); Byrum, K. [Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439 (United States); Cesarini, A.; Connolly, M. P. [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland); Ciupik, L. [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States); Cui, W.; Feng, Q.; Finley, J. P. [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States); Errando, M. [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States); Falcone, A., E-mail: fortin@veritas.sao.arizona.edu, E-mail: errando@astro.columbia.edu, E-mail: jholder@physics.udel.edu, E-mail: sfegan@llr.in2p3.fr [Department of Astronomy and Astrophysics, 525 Davey Lab, Pennsylvania State University, University Park, PA 16802 (United States); Collaboration: VERITAS Collaboration; and others

2013-10-20T23:59:59.000Z

257

X-ray Studies of Unidentified Galactic TeV Gamma-ray Sources  

SciTech Connect (OSTI)

Many of the recently discovered Galactic TeV sources remain unidentified to date. A large fraction of the sources is possibly associated with relic pulsar wind nebula (PWN) systems. One key question here is the maximum energy (beyond TeV) attained in the compact PWNe. Hard X-ray emission can trace those particles, but current non-focussing X-ray instruments above 10 keV have difficulties to deconvolve the hard pulsar spectrum from its surrounding nebula.Some of the new TeV sources are also expected to originate from middle-aged and possibly even from old supernova remnants (SNR). But no compelling case for such an identification has been found yet. In established young TeV-emitting SNRs, X-ray imaging above 10 keV could help to disentangle the leptonic from the hadronic emission component in the TeV shells, if secondary electrons produced in hadronic collisions can be effectively detected. As SNRs get older, the high energy electron component is expected to fade away. This may allow to verify the picture through X-ray spectral evolution of the source population.Starting from the lessons we have learned so far from X-ray follow-up observations of unidentified TeV sources, prospects for Simbol-X to resolve open questions in this field will be discussed.

Puehlhofer, Gerd [Institut fuer Astronomie und Astrophysik, Sand 1, 72076 Tuebingen (Germany)

2009-05-11T23:59:59.000Z

258

Abundance determinations in HII regions: model fitting versus Te-method  

E-Print Network [OSTI]

The discrepancy between the oxygen abundances in high-metallicity HII regions determined through the Te-method (and/or through the corresponding "strong lines - oxygen abundance" calibration) and that determined through the model fitting (and/or through the corresponding "strong lines - oxygen abundance" calibration) is discussed. It is suggested to use the interstellar oxygen abundance in the solar vicinity, derived with very high precision from the high-resolution observations of the weak interstellar absorption lines towards the stars, as a "Rosetta stone" to verify the validity of the oxygen abundances derived in HII regions with the Te-method at high abundances. The agreement between the value of the oxygen abundance at the solar galactocentric distance traced by the abundances derived in HII regions through the Te-method and that derived from the interstellar absorption lines towards the stars is strong evidence in favor of that i) the two-zone model for Te seems to be a realistic interpretation of the temperature structure within HII regions, and ii) the classic Te-method provides accurate oxygen abundances in HII regions. It has been concluded that the "strong lines - oxygen abundance" calibrations must be based on the HII regions with the oxygen abundances derived with the Te-method but not on the existing grids of the models for HII regions.

L. S. Pilyugin

2002-11-14T23:59:59.000Z

259

Enhanced thermoelectric performance in Cd doped CuInTe{sub 2} compounds  

SciTech Connect (OSTI)

CuIn{sub 1?x}Cd{sub x}Te{sub 2} materials (x?=?0, 0.02, 0.05, and 0.1) are prepared using melting-annealing method and the highly densified bulk samples are obtained through Spark Plasma Sintering. The X-ray diffraction data confirm that nearly pure chalcopyrite structures are obtained in all the samples. Due to the substitution of Cd at In sites, the carrier concentration is greatly increased, leading to much enhanced electrical conductivity and power factor. The single parabolic band model is used to describe the electrical transport properties of CuInTe{sub 2} and the low temperature Hall mobility is also modeled. By combing theoretical model and experiment data, the optimum carrier concentration in CuInTe{sub 2} is proposed to explain the greatly enhanced power factors in the Cd doped CuInTe{sub 2}. In addition, the thermal conductivity is reduced by extra phonon scattering due to the atomic mass and radius fluctuations between Cd and In atoms. The maximum zTs are observed in CuIn{sub 0.98}Cd{sub 0.02}Te{sub 2} and CuIn{sub 0.9}Cd{sub 0.1}Te{sub 2} samples, which are improved by over 100% at room temperature and around 20% at 600?K.

Cheng, N. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049 (China); Liu, R. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Bai, S. [CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Shi, X., E-mail: xshi@mail.sic.ac.cn; Chen, L. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

2014-04-28T23:59:59.000Z

260

Strong lensing probability in TeVeS theory  

E-Print Network [OSTI]

We recalculate the strong lensing probability as a function of the image separation in TeVeS (tensor-vector-scalar) cosmology, which is a relativistic version of MOND (MOdified Newtonian Dynamics). The lens is modeled by the Hernquist profile. We assume an open cosmology with $\\Omega_b=0.04$ and $\\Omega_\\Lambda=0.5$ and three different kinds of interpolating functions. Two different galaxy stellar mass functions (GSMF) are adopted: PHJ (Panter-Heavens-Jimenez, 2004) determined from SDSS data release one and Fontana (Fontana et al., 2006) from GOODS-MUSIC catalog. We compare our results with both the predicted probabilities for lenses by Singular Isothermal Sphere (SIS) galaxy halos in LCDM (lambda cold dark matter) with Schechter-fit velocity function, and the observational results of the well defined combined sample of Cosmic Lens All-Sky Survey (CLASS) and Jodrell Bank/Very Large Array Astrometric Survey (JVAS). It turns out that the interpolating function $\\mu(x)=x/(1+x)$ combined with Fontana GSMF matches the results from CLASS/JVAS quite well.

Da-Ming Chen

2007-12-11T23:59:59.000Z

Note: This page contains sample records for the topic "te rm te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

DEVELOPMENT OF CdZnTe RADIATION DETECTORS  

SciTech Connect (OSTI)

Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection-topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.

BOLOTNIKOV, A.; CAMARDA, G.; HOSSAIN, A.; KIM, K.H.; YANG, G.; GUL, R.; CUI, Y.; AND JAMES, R.B.

2011-10-23T23:59:59.000Z

262

Note on XMM-Newton observations of the first unidentified TeV gamma-ray source TeV J2032+4130 by Horns et al. astro-ph/0705.0009  

E-Print Network [OSTI]

I comment on the -- apparent -- diffuse X-ray emission reported by Horns et al. in their XMM observations of TeV J2032+4130

Yousaf Butt

2007-05-02T23:59:59.000Z

263

DISCOVERY OF TeV GAMMA-RAY EMISSION FROM CTA 1 BY VERITAS  

SciTech Connect (OSTI)

We report the discovery of TeV gamma-ray emission coincident with the shell-type radio supernova remnant (SNR) CTA 1 using the VERITAS gamma-ray observatory. The source, VER J0006+729, was detected as a 6.5 standard deviation excess over background and shows an extended morphology, approximated by a two-dimensional Gaussian of semimajor (semiminor) axis 0. Degree-Sign 30 (0. Degree-Sign 24) and a centroid 5' from the Fermi gamma-ray pulsar PSR J0007+7303 and its X-ray pulsar wind nebula (PWN). The photon spectrum is well described by a power-law dN/dE = N {sub 0}(E/3 TeV){sup -{Gamma}}, with a differential spectral index of {Gamma} = 2.2 {+-} 0.2{sub stat} {+-} 0.3{sub sys}, and normalization N {sub 0} = (9.1 {+-} 1.3{sub stat} {+-} 1.7{sub sys}) Multiplication-Sign 10{sup -14} cm{sup -2} s{sup -1} TeV{sup -1}. The integral flux, F {sub {gamma}} = 4.0 Multiplication-Sign 10{sup -12} erg cm{sup -2} s{sup -1} above 1 TeV, corresponds to 0.2% of the pulsar spin-down power at 1.4 kpc. The energetics, colocation with the SNR, and the relatively small extent of the TeV emission strongly argue for the PWN origin of the TeV photons. We consider the origin of the TeV emission in CTA 1.

Aliu, E.; Errando, M. [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States)] [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States); Archambault, S. [Physics Department, McGill University, Montreal, QC H3A 2T8 (Canada)] [Physics Department, McGill University, Montreal, QC H3A 2T8 (Canada); Arlen, T. [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States)] [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States); Aune, T.; Bouvier, A. [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States)] [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States); Beilicke, M.; Buckley, J. H.; Bugaev, V.; Dickherber, R. [Department of Physics, Washington University, St. Louis, MO 63130 (United States)] [Department of Physics, Washington University, St. Louis, MO 63130 (United States); Benbow, W. [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States)] [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States); Cesarini, A.; Connolly, M. P. [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland)] [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland); Ciupik, L. [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States)] [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States); Collins-Hughes, E. [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland)] [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Cui, W. [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States)] [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States); Duke, C. [Department of Physics, Grinnell College, Grinnell, IA 50112-1690 (United States)] [Department of Physics, Grinnell College, Grinnell, IA 50112-1690 (United States); Dumm, J. [School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455 (United States)] [School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455 (United States); Dwarkadas, V. V. [Department of Astronomy and Astrophysics, University of Chicago, Chicago, IL 60637 (United States)] [Department of Astronomy and Astrophysics, University of Chicago, Chicago, IL 60637 (United States); Falcone, A., E-mail: muk@astro.columbia.edu, E-mail: smcarthur@ulysses.uchicago.edu [Department of Astronomy and Astrophysics, 525 Davey Lab, Pennsylvania State University, University Park, PA 16802 (United States); and others

2013-02-10T23:59:59.000Z

264

Key experimental information on intermediate-range atomic structures in amorphous Ge2Sb2Te5 phase change material  

E-Print Network [OSTI]

.1063/1.3657139 Nature of phase transitions in crystalline and amorphous GeTe-Sb2Te3 phase change materials J. Chem. Phys on intermediate-range atomic structures in amorphous Ge2Sb2Te5 phase change material Shinya Hosokawa,1,2,a) Wolf change material Shinya Hosokawa, Wolf-Christian Pilgrim, Astrid Höhle, Daniel Szubrin, Nathalie Boudet

Paris-Sud XI, Université de

265

DETERMINATION OF BACK CONTACT BARRIER HEIGHT IN Cu(In,Ga)(Se,S)2 AND CdTe SOLAR CELLS  

E-Print Network [OSTI]

DETERMINATION OF BACK CONTACT BARRIER HEIGHT IN Cu(In,Ga)(Se,S)2 AND CdTe SOLAR CELLS Galymzhan T to quantify the energy barrier for holes between a Cu(In,Ga)(Se,S)2 (CIGSeS) or CdTe absorber and the back effectively kill the performance of the cell. Many CIGSeS and CdTe cells, however, do have a back

Sites, James R.

266

X-RAY ESCAPE PEAK VARIATIONS IN DIODES MADE FROM DOUBLY TRAVELLING SOLVENT GROWN p-TYPE CdTe  

E-Print Network [OSTI]

293 X-RAY ESCAPE PEAK VARIATIONS IN DIODES MADE FROM DOUBLY TRAVELLING SOLVENT GROWN p-TYPE CdTe H On a étudié la variation de l'intensité du pic d'échappement d'un compteur CdTe en fonction de la tension de height on the applied diode voltage was measured at diodes made from doubly travelling solvent grown CdTe

Paris-Sud XI, Université de

267

COMPARATIVE STUDY OF CdTe AND GaAs PHOTOREFRACTIVE PERFORMANCES FROM 1m TO 1.55m  

E-Print Network [OSTI]

1 COMPARATIVE STUDY OF CdTe AND GaAs PHOTOREFRACTIVE PERFORMANCES FROM 1µm TO 1.55µm L.A. de CdTe at different wavelengths from 1.06µm to 1.55µm. The sensitivity and performances of different for the extension of the photorefractive effect towards the wavelength region of 1.3-1.5µm. CdTe appears

Paris-Sud XI, Université de

268

Growth of CdTe Films on Amorphous Substrates Using CaF2 Nanorods as a Buffer Layer  

E-Print Network [OSTI]

Growth of CdTe Films on Amorphous Substrates Using CaF2 Nanorods as a Buffer Layer NICHOLAS LICAUSI biaxially textured CdTe films were grown on biaxial CaF2 buffer layers. The CaF2 nanorods were grown by oblique angle vapor deposition and possessed a {111}h121i biaxial texture. The CdTe film was deposited

Wang, Gwo-Ching

269

REVIEW OF CdTe MEDICAL APPLICATIONS Radiation Monitoring Devices, Inc. 44 Hunt St., Watertown, Massachusetts 02172, U. S. A.  

E-Print Network [OSTI]

REVIEW OF CdTe MEDICAL APPLICATIONS G. ENTINE Radiation Monitoring Devices, Inc. 44 Hunt St place de dents synthé- tiques. Par ailleurs, les détecteurs CdTe ont été utilisés pour le diagnostic d développer des photo- conducteurs X à base de CdTe pour les tomo-densitomètres ; toutefois, des progrès

Paris-Sud XI, Université de

270

Epitaxial growth of CdTe oriented thin films, infrared characterization and possible applications to photo-voltaic cells  

E-Print Network [OSTI]

573 Epitaxial growth of CdTe oriented thin films, infrared characterization and possible décembre 1979, accepté le 12 décembre 1979) Résumé. 2014 Des films minces orientés de CdTe, d de CdTe cubique dont la face (111), polie mécaniquement et décapée chimiquement, est préalablement

Paris-Sud XI, Université de

271

CONTRIBUTION TO THE DETERMINATION OF DEEP TRAPPING LEVELS IN HIGH RESISTIVITY FILMS OF n-TYPE CdTe  

E-Print Network [OSTI]

-TYPE CdTe C. LHERMITTE, D. CARLES and C. VAUTIER Laboratoire de Physique des couches minces, Faculté des conduction à l'obscurité et de la photoconductivité des couches minces de CdTe de type n nous permet de and the photoconductivity of n-type CdTe films enables us to emphasize the existence of a distribution of traps located

Boyer, Edmond

272

The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1  

E-Print Network [OSTI]

1 The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1 , T.A. Gessert2 of Cu impurity inclusion in CdTe thin film solar cells, such as degradation caused by Cu diffusion , and Su-Huai Wei2 1 Department of Physics and Apollo CdTe Solar Energy Research Center, NJIT, Newark, NJ

273

A Search for a Light Charged Higgs Boson Decaying to cs at ?s = 7 TeV.  

E-Print Network [OSTI]

??A search for a light charged Higgs boson decaying into cs is presented using data recorded in pp collisions at ?s = 7 TeV. The… (more)

Martyniuk, Alex Christopher

2011-01-01T23:59:59.000Z

274

De herontwikkeling van het DSM terrein; naar een strategisch advies voor de ontwikkeling van het DSM terrein te Delft :.  

E-Print Network [OSTI]

??Het doel van het onderzoek is het traceren van het (bewust of onbewust) gevolgde strategisch proces voor de herontwikkeling van het DSM terrein te Delft,… (more)

Schellekens, F.P.

2013-01-01T23:59:59.000Z

275

Calcul de la variation de mobilit des lectrons dans PbTe type n entre 50 et 300 K  

E-Print Network [OSTI]

, Classification Physics Abstracts 72.20F 1. Introduction. Les chalcog6nures tel le tellurure de plomb (PbTe) sont

Paris-Sud XI, Université de

276

Exploring alternative symmetry breaking mechanisms at the LHC with 7, 8 and 10 TeV total energy  

E-Print Network [OSTI]

In view of the annnouncement that in 2012 the LHC will run at 8 TeV, we study the possibility of detecting signals of alternative mechanisms of ElectroWeak Symmetry Breaking, described phenomenologically by unitarized models, at energies lower than 14 TeV. A complete calculation with six fermions in the final state is performed using the PHANTOM event generator. Our results indicate that at 8 TeV some of the scenarios with TeV scale resonances are likely to be identified while models with no resonances or with very heavy ones will be inaccessible, unless the available luminosity will be much higher than expected.

Alessandro Ballestrero; Diogo Buarque Franzosi; Ezio Maina

2012-03-13T23:59:59.000Z

277

Midrapidity antiproton-to-proton ratio in pp collisions at $\\sqrt{s} = 0.9$ and $7$~TeV measured by the ALICE experiment  

E-Print Network [OSTI]

The ratio of the yields of antiprotons to protons in pp collisions has been measured by the ALICE experiment at $\\sqrt{s} = 0.9$ and $7$~TeV during the initial running periods of the Large Hadron Collider(LHC). The measurement covers the transverse momentum interval $0.45 < p_{\\rm{t}} < 1.05$~GeV/$c$ and rapidity $|y| < 0.5$. The ratio is measured to be $R_{|y| < 0.5} = 0.957 \\pm 0.006 (stat.) \\pm 0.014 (syst.)$ at $0.9$~TeV and $R_{|y| < 0.5} = 0.991 \\pm 0.005 (stat.) \\pm 0.014 (syst.)$ at $7$~TeV and it is independent of both rapidity and transverse momentum. The results are consistent with the conventional model of baryon-number transport and set stringent limits on any additional contributions to baryon-number transfer over very large rapidity intervals in pp collisions.

Authors; :; ALICE Collaboration; :; K. Aamodt; N. Abel; U. Abeysekara; A. Abrahantes Quintana; A. Abramyan; D. Adamova; M. M. Aggarwal; G. Aglieri Rinella; A. G. Agocs; S. Aguilar Salazar; Z. Ahammed; A. Ahmad; N. Ahmad; S. U. Ahn; R. Akimoto; A. Akindinov; D. Aleksandrov; B. Alessandro; R. Alfaro Molina; A. Alici; E. Almaraz Avina; J. Alme; T. Alt; V. Altini; S. Altinpinar; C. Andrei; A. Andronic; G. Anelli; V. Angelov; C. Anson; T. Anticic; F. Antinori; S. Antinori; K. Antipin; D. Antonczyk; P. Antonioli; A. Anzo; L. Aphecetche; H. Appelshauser; S. Arcelli; R. Arceo; A. Arend; N. Armesto; R. Arnaldi; T. Aronsson; I. C. Arsene; A. Asryan; A. Augustinus; R. Averbeck; T. C. Awes; J. Aysto; M. D. Azmi; S. Bablok; M. Bach; A. Badala; Y. W. Baek; S. Bagnasco; R. Bailhache; R. Bala; A. Baldisseri; A. Baldit; J. Ban; R. Barbera; G. G. Barnafoldi; L. Barnby; V. Barret; J. Bartke; F. Barile; M. Basile; V. Basmanov; N. Bastid; B. Bathen; G. Batigne; B. Batyunya; C. Baumann; I. G. Bearden; B. Becker; I. Belikov; R. Bellwied; E. Belmont-Moreno; A. Belogianni; L. Benhabib; S. Beole; I. Berceanu; A. Bercuci; E. Berdermann; Y. Berdnikov; L. Betev; A. Bhasin; A. K. Bhati; L. Bianchi; N. Bianchi; C. Bianchin; J. Bielcik; J. Bielcikova; A. Bilandzic; L. Bimbot; E. Biolcati; A. Blanc; F. Blanco; F. Blanco; D. Blau; C. Blume; M. Boccioli; N. Bock; A. Bogdanov; H. Boggild; M. Bogolyubsky; J. Bohm; L. Boldizsar; M. Bombara; C. Bombonati; M. Bondila; H. Borel; A. Borisov; C. Bortolin; S. Bose; L. Bosisio; F. Bossu; M. Botje; S. Bottger; G. Bourdaud; B. Boyer; M. Braun; P. Braun-Munzinger; L. Bravina; M. Bregant; T. Breitner; G. Bruckner; R. Brun; E. Bruna; G. E. Bruno; D. Budnikov; H. Buesching; P. Buncic; O. Busch; Z. Buthelezi; D. Caffarri; X. Cai; H. Caines; E. Camacho; P. Camerini; M. Campbell; V. Canoa Roman; G. P. Capitani; G. Cara Romeo; F. Carena; W. Carena; F. Carminati; A. Casanova Diaz; M. Caselle; J. Castillo Castellanos; J. F. Castillo Hernandez; V. Catanescu; E. Cattaruzza; C. Cavicchioli; P. Cerello; V. Chambert; B. Chang; S. Chapeland; A. Charpy; J. L. Charvet; S. Chattopadhyay; S. Chattopadhyay; M. Cherney; C. Cheshkov; B. Cheynis; E. Chiavassa; V. Chibante Barroso; D. D. Chinellato; P. Chochula; K. Choi; M. Chojnacki; P. Christakoglou; C. H. Christensen; P. Christiansen; T. Chujo; F. Chuman; C. Cicalo; L. Cifarelli; F. Cindolo; J. Cleymans; O. Cobanoglu; J. -P. Coffin; S. Coli; A. Colla; G. Conesa Balbastre; Z. Conesa del Valle; E. S. Conner; P. Constantin; G. Contin; J. G. Contreras; Y. Corrales Morales; T. M. Cormier; P. Cortese; I. Cortes Maldonado; M. R. Cosentino; F. Costa; M. E. Cotallo; E. Crescio; P. Crochet; E. Cuautle; L. Cunqueiro; J. Cussonneau; A. Dainese; H. H. Dalsgaard; A. Danu; I. Das; A. Dash; S. Dash; G. O. V. de Barros; A. De Caro; G. de Cataldo; J. de Cuveland; A. De Falco; M. De Gaspari; J. de Groot; D. De Gruttola; N. De Marco; S. De Pasquale; R. De Remigis; R. de Rooij; G. de Vaux; H. Delagrange; G. Dellacasa; A. Deloff; V. Demanov; E. Denes; A. Deppman; G. D'Erasmo; D. Derkach; A. Devaux; D. Di Bari; C. Di Giglio; S. Di Liberto; A. Di Mauro; P. Di Nezza; M. Dialinas; L. Diaz; R. Diaz; T. Dietel; R. Divia; O. Djuvsland; V. Dobretsov; A. Dobrin; T. Dobrowolski; B. Donigus; I. Dominguez; D. M. M. Don; O. Dordic; A. K. Dubey; J. Dubuisson; L. Ducroux; P. Dupieux; A. K. Dutta Majumdar; M. R. Dutta Majumdar; D. Elia; D. Emschermann; A. Enokizono; B. Espagnon; M. Estienne; S. Esumi; D. Evans; S. Evrard; G. Eyyubova; C. W. Fabjan; D. Fabris; J. Faivre; D. Falchieri; A. Fantoni; M. Fasel; O. Fateev; R. Fearick; A. Fedunov; D. Fehlker; V. Fekete; D. Felea; B. Fenton-Olsen; G. Feofilov; A. Fernandez Tellez; E. G. Ferreiro; A. Ferretti; R. Ferretti; M. A. S. Figueredo; S. Filchagin; R. Fini; F. M. Fionda; E. M. Fiore; M. Floris; Z. Fodor; S. Foertsch; P. Foka; S. Fokin; F. Formenti; E. Fragiacomo; M. Fragkiadakis; U. Frankenfeld; A. Frolov; U. Fuchs; F. Furano; C. Furget; M. Fusco Girard; J. J. Gaardhoje; S. Gadrat; M. Gagliardi; A. Gago; M. Gallio; P. Ganoti; M. S. Ganti; C. Garabatos; C. Garcia Trapaga; J. Gebelein; R. Gemme; M. Germain; A. Gheata; M. Gheata; B. Ghidini; P. Ghosh; G. Giraudo; P. Giubellino; E. Gladysz-Dziadus; R. Glasow; P. Glassel; A. Glenn; R. Gomez Jimenez; H. Gonzalez Santos; L. H. Gonzalez-Trueba; P. Gonzalez-Zamora; S. Gorbunov; Y. Gorbunov; S. Gotovac; H. Gottschlag; V. Grabski; R. Grajcarek; A. Grelli; A. Grigoras; C. Grigoras; V. Grigoriev; A. Grigoryan; S. Grigoryan; B. Grinyov; N. Grion; P. Gros; J. F. Grosse-Oetringhaus; J. -Y. Grossiord; R. Grosso; F. Guber; R. Guernane; B. Guerzoni; K. Gulbrandsen; H. Gulkanyan; T. Gunji; A. Gupta; R. Gupta; H. -A. Gustafsson; H. Gutbrod; O. Haaland; C. Hadjidakis; M. Haiduc; H. Hamagaki; G. Hamar; J. Hamblen; B. H. Han; J. W. Harris; M. Hartig; A. Harutyunyan; D. Hasch

2010-06-28T23:59:59.000Z

278

Abidjan, Côte d'Ivoire: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Abidjan, Côte d'Ivoire: Energy Resources Abidjan, Côte d'Ivoire: Energy Resources Jump to: navigation, search Name Abidjan, Côte d'Ivoire Equivalent URI DBpedia GeoNames ID 2293538 Coordinates 5.341111°, -4.028056° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":5.341111,"lon":-4.028056,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

279

Suzanne G.E. te Velthuis - Argonne National Laboratories, Materials Sicence  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

NXRS > Suzanne G.E. te Velthuis NXRS > Suzanne G.E. te Velthuis Suzanne G.E. te Velthuis Physicist Bldg. 223, B-205 Phone 630-252-1075 This e-mail address is being protected from spambots. You need JavaScript enabled to view it. Quick Links Selected Publications Selected Invited Talks Present Position Physicist, Materials Science Division, Argonne National Laboratory (2005-Present). Education Ph.D. Degree, Deft University of Technology, The Netherlands (1999). Masters Degree in Applied Physics, Eindhoven University of Technology, The Netherlands (1993). Professional Expirence Assistant Scientist, Materials Science Division, Argonne National Laboratory, (2001-2005). Post-doctoral Scientist, Intense Pulsed Neutron Source, Argonne National Laboratory (1999-2001). Researcher in training (leading to PhD degree), Delft University of Technology, The Netherlands (1994 -1998).

280

Energy spectrum of charge carriers in Ag{sub 2}Te  

SciTech Connect (OSTI)

On the basis of investigations of the temperature and concentration dependences of kinetic coefficients (the Hall coefficientR, the electrical conductivity {sigma}, and thermopower {alpha}{sub 0}) in n-type Ag{sub 2}Te, it is established that Ag atoms in Ag{sub 2}Te create the shallow donor levels located at a distance of (0.002-7 x 10{sup -5}T) eV from the bottom of the conduction band. It is shown that silver telluride has n-type conductivity starting with the deficiency of Ag {>=} 0.01 at % in the stoichiometric composition, and it is practically impossible to achieve the stoichiometric composition in Ag{sub 2}Te.

Aliev, F. F., E-mail: farzali@physics.ab.az; Jafarov, M. B. [Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2008-11-15T23:59:59.000Z

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281

Optical characteristics of pulsed laser deposited Ge-Sb-Te thin films studied by spectroscopic ellipsometry  

SciTech Connect (OSTI)

Pulsed laser deposition technique was used for the fabrication of (GeTe){sub 1-x}(Sb{sub 2}Te{sub 3}){sub x} (x = 0, 0.33, 0.50, 0.66, and 1) amorphous thin films. Scanning electron microscopy with energy-dispersive x-ray analysis, x-ray diffraction, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (rocksaltlike) layers. In order to extract optical functions of the films, the Cody-Lorentz model was applied for the analysis of ellipsometric data. Fitted sets of Cody-Lorentz model parameters are discussed in relation with chemical composition and the structure of the layers. The GeTe component content was found to be responsible for the huge optical functions and thickness changes upon amorphous-to-fcc phase transition.

Nemec, P. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Prikryl, J.; Frumar, M. [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Nazabal, V. [Equipe Verres et Ceramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Universite de Rennes 1, 35042 Rennes Cedex (France)

2011-04-01T23:59:59.000Z

282

Diffuse neutrinos from extragalactic supernova remnants: Dominating the 100 TeV IceCube flux  

E-Print Network [OSTI]

IceCube has measured a diffuse astrophysical flux of TeV-PeV neutrinos. The most plausible sources are unique high energy cosmic ray accelerators like hypernova remnants (HNRs) and remnants from gamma ray bursts in star-burst galaxies, which can produce primary cosmic rays with the required energies and abundance. In this case, however, ordinary supernova remnants (SNRs), which are far more abundant than HNRs, produce a comparable or larger neutrino flux in the ranges up to 100-150 TeV energies, implying a spectral break in the IceCube signal around these energies. The SNRs contribution in the diffuse flux up to these hundred TeV energies provides a natural baseline and then constrains the expected PeV flux.

Chakraborty, Sovan

2015-01-01T23:59:59.000Z

283

Phase assembly and photo-induced current in CdTe-ZnO nanocomposite thin films  

SciTech Connect (OSTI)

Sequential radio-frequency sputtering was used to produce CdTe-ZnO nanocomposite thin films with varied semiconductor-phase extended structures. Control of the spatial distribution of CdTe nanoparticles within the ZnO embedding phase was used to influence the semiconductor phase connectivity, contributing to both changes in quantum confinement induced spectral absorption and carrier transport characteristics of the resulting nanocomposite. An increased number density of CdTe particles deposited along the applied field direction produced an enhancement in the photo-induced current observed. These results highlight the opportunity to employ long-range phase assembly as a means to control optoelectronic properties of significant interest for photovoltaic applications.

Beal, R. J.; Kana Kana, J. B. [Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721 (United States); Potter, B. G. Jr. [Department of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85721 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States)

2012-07-16T23:59:59.000Z

284

Layer-by-Layer Assembly of Sintered CdSexTe1–x Nanocrystal Solar Cells  

Science Journals Connector (OSTI)

solar cell; nanocrystal; CdTe; CdSexTe1?x; layer-by-layer; solution-processed; sintered ... For instance, devices fabricated using cadmium telluride (CdTe) and copper indium gallium selenide (CIGS) based active layers have exhibited laboratory scale power conversion efficiencies up to 17.3%(1) and 20.3%,(2) respectively, at commercial production costs as low as US $0.75/Watt. ... (20) More recently, the graded device concept has been extended to solution-processed organic solar cells, through a series of complementary donor materials(21) and to PbS quantum dot devices, where bandgap grading was accomplished through variation of the QD diameter. ...

Brandon I. MacDonald; Alessandro Martucci; Sergey Rubanov; Scott E. Watkins; Paul Mulvaney; Jacek J. Jasieniak

2012-06-12T23:59:59.000Z

285

Testing the plutonium isotopic analysis code FRAM with various CdTe detectors.  

SciTech Connect (OSTI)

The isotopic analysis code Fixed-energy Response-function Analysis with Multiple efficiency (FRAM)1,2 has been proven to successfully analyze plutonium spectra taken with a portable CdTe detector with Peltier cooling, the first results of this kind for a noncryogenic detector.3 These are the first wide-range plutonium gamma-ray isotopics analysis results obtained with other than Ge spectrometers. The CdTe spectrometer measured small plutonium reference samples in reasonable count times, covering the range from low to high burnup. This paper describes further testing of FRAM with two CdTe detectors of different sizes and resolutions using different analog and digital, portable multichannel analyzers (MCAs).

Vo, Duc T.; Russo, P. A. (Phyllis A.)

2002-01-01T23:59:59.000Z

286

Hybrid model of GeV-TeV gamma ray emission from Galactic Center  

E-Print Network [OSTI]

The observations of high energy $\\gamma$-ray emission from the Galactic center (GC) by HESS, and recently by Fermi, suggest the cosmic ray acceleration in the GC and possibly around the supermassive black hole. In this work we propose a lepton-hadron hybrid model to explain simultaneously the GeV-TeV $\\gamma$-ray emission. Both electrons and hadronic cosmic rays were accelerated during the past activity of the GC. Then these particles would diffuse outwards and interact with the interstellar gas and background radiation field. The collisions between hadronic cosmic rays with gas is responsible to the TeV $\\gamma$-ray emission detected by HESS. With fast cooling in the strong radiation field, the electrons would cool down and radiate GeV photons through inverse Compton scattering off the soft background photons. This scenario provides a natural explanation of the observed GeV-TeV spectral shape of $\\gamma$-rays.

Yi-Qing Guo; Qiang Yuan; Cheng Liu; Ai-Feng Li

2014-09-14T23:59:59.000Z

287

Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers  

SciTech Connect (OSTI)

Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.

Niraula, M.; Yasuda, K.; Wajima, Y.; Yamashita, H.; Tsukamoto, Y.; Suzuki, Y.; Matsumoto, M.; Takai, N.; Tsukamoto, Y.; Agata, Y. [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)] [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)

2013-10-28T23:59:59.000Z

288

Ionic conductivity and dielectric relaxation in {gamma}-irradiated TlGaTe{sub 2} crystals  

SciTech Connect (OSTI)

The switching effect, field and temperature dependences of the permittivity and conductivity of TlGaTe{sub 2} crystals subjected to various {gamma}-irradiation doses are studied. Under rather low electric fields, the phenomenon of threshold switching with an S-shaped current-voltage characteristic containing a portion with negative differential resistance is observed in the crystals. In the region of critical voltages, current and voltage oscillations and imposed modulation are observed. Possible mechanisms of switching, ionic conductivity, disorder, and electrical instability in TlGaTe{sub 2} crystals are discussed.

Sardarli, R. M., E-mail: sardarli@yahoo.com; Samedov, O. A.; Abdullayev, A. P. [National Academy of Sciences of Azerbaijan, Institute of Radiation Problems (Azerbaijan); Huseynov, E. K. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Salmanov, F. T.; Alieva, N. A.; Agaeva, R. Sh. [National Academy of Sciences of Azerbaijan, Institute of Radiation Problems (Azerbaijan)

2013-05-15T23:59:59.000Z

289

Measurement of Dijet Azimuthal Decorrelations in pp Collisions at {radical}(s)=7 TeV  

SciTech Connect (OSTI)

Azimuthal decorrelations between the two central jets with the largest transverse momenta are sensitive to the dynamics of events with multiple jets. We present a measurement of the normalized differential cross section based on the full data set ({integral}Ldt=36 pb{sup -1}) acquired by the ATLAS detector during the 2010 {radical}(s)=7 TeV proton-proton run of the LHC. The measured distributions include jets with transverse momenta up to 1.3 TeV, probing perturbative QCD in a high-energy regime.

Aad, G.; Ahles, F.; Beckingham, M.; Bernhard, R.; Bitenc, U.; Bruneliere, R.; Caron, S.; Carpentieri, C.; Christov, A.; Dahlhoff, A.; Dietrich, J.; Eckert, S.; Fehling-Kaschek, M.; Flechl, M.; Glatzer, J. [Fakultaet fuer Mathematik und Physik, Albert-Ludwigs-Universitaet, Freiburg i.Br. (Germany); Abbott, B. [Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman Oklahoma (United States); Abdallah, J.; Bosman, M.; Casado, M. P.; Cavalli-Sforza, M. [Institut de Fisica d'Altes Energies and Universitat Autonoma de Barcelona and ICREA, Barcelona (Spain)

2011-04-29T23:59:59.000Z

290

Improvement of the energy resolution of CdTe detectors by pulse height correction from waveform  

E-Print Network [OSTI]

Semiconductor detectors made of CdTe crystal have high gamma-ray detection efficiency and are usable at room temperature. However, the energy resolution of CdTe detectors for MeV gamma-rays is rather poor because of the significant hole trapping effect. We have developed a method to improve the energy resolution by correcting the pulse height using the waveform of the signal and achieved 2.0% (FWHM) energy resolution for 662keV gamma-rays. Best energy resolution was achieved at temperatures between -10 degrees C and 0 degrees C.

Kikawa, T; Hiraki, T; Nakaya, T

2011-01-01T23:59:59.000Z

291

Improvement of the energy resolution of CdTe detectors by pulse height correction from waveform  

E-Print Network [OSTI]

Semiconductor detectors made of CdTe crystal have high gamma-ray detection efficiency and are usable at room temperature. However, the energy resolution of CdTe detectors for MeV gamma-rays is rather poor because of the significant hole trapping effect. We have developed a method to improve the energy resolution by correcting the pulse height using the waveform of the signal and achieved 2.0% (FWHM) energy resolution for 662keV gamma-rays. Best energy resolution was achieved at temperatures between -10 degrees C and 0 degrees C.

T. Kikawa; A. K. Ichikawa; T. Hiraki; T. Nakaya

2011-12-21T23:59:59.000Z

292

Ultrahigh Energy Cosmic Rays and Prompt TeV Gamma Rays from Gamma Ray Bursts  

E-Print Network [OSTI]

Gamma Ray Bursts (GRBs) have been proposed as one {\\it possible} class of sources of the Ultrahigh Energy Cosmic Ray (UHECR) events observed up to energies $\\gsim10^{20}\\ev$. The synchrotron radiation of the highest energy protons accelerated within the GRB source should produce gamma rays up to TeV energies. Here we briefly discuss the implications on the energetics of the GRB from the point of view of the detectability of the prompt TeV gamma rays of proton-synchrotron origin in GRBs in the up-coming ICECUBE muon detector in the south pole.

Pijushpani Bhattacharjee; Nayantara Gupta

2003-05-12T23:59:59.000Z

293

A search for neutrinoless double beta decay of 130Te with a low temperature calorimeter  

Science Journals Connector (OSTI)

Possible impacts of the bolometric technique on Neutrinoless Double Beta Decay (0??DVD) search are discussed. In this approach the performances of two TeO2 low temperature calorimeters with masses of 73 g and 340 g are reported: the FWHM resolutions are respectively 6 keV and 20 keV at 2614 keV. The operation of these detectors in a low background environment in the Gran Sasso underground laboratory has allowed to set a limit on the half?life of 130Te 2??DBD of about 2.5×1021 and to study the residual radioactive background components.

A. Alessandrello; C. Brofferio; D. V. Camin; O. Cremonesi; G. Gervasio; E. Fiorini; A. Giuliani; M. Pavan; G. Pessina; E. Previtali; L. Zanotti

1992-01-01T23:59:59.000Z

294

Shubnikov-de Haas Oscillations in the Bulk Rashba Semiconductor BiTeI  

SciTech Connect (OSTI)

Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c-axis. The corresponding areas of the inner and outer Fermi surfaces around the A-point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces.

Bell, C.; Bahramy, M.S.; Murakawa, H.; Checkelsky, J.G.; Arita, R.; Kaneko, Y.; Onose, Y.; Nagaosa, N.; Tokura, Y.; Hwang, H.Y.

2012-07-11T23:59:59.000Z

295

Use of a capillary X-ray focused beam to investigate the chemical composition of CdZnTe wafers with high resolution CdZnTe detectors  

SciTech Connect (OSTI)

The control of the concentration of Zn and its fluctuation in the high pressure Bridgman grown CdZnTe crystals is part of the characterization work on the ternary grown ingots grown in house. In order to reach both high sensitivity and high position resolution, the authors have developed a new system consisting of a X-ray generator, coupled to a focusing X-ray capillary, delivering intense beams in the micron scale, since the intensity gain is around a factor of 100 compared to conventional methods. The characteristic X-rays are measured through a high resolution CdZnTe detector (225 eV at 5.9 keV FWHM) cooled by a Peltier system. The results of the investigations on different kinds of crystals will be discussed.

Fougeres, P. [EURORAD, Strasbourg (France); Burggraf, Ch.; Burggraf, Chr.; Koebel, J.M.; Regal, R.; Hage-Ali, M.; Krauth, A.; Siffert, P. [CNRS, Strasbourg (France). Lab. PHASE; Koenig, C. [Univ. Louis Pasteur, Schiltigheim (France)

1998-12-31T23:59:59.000Z

296

Obtaining and investigation of Pb1-xMnxTe(Se, S) semimagnetic semiconductor nanolayers sesitive to infrared rays  

Science Journals Connector (OSTI)

In the given work the energy spectrum and wave functions have been theoretically calculated for quantum-sized films of Pb1-xMnxTe (Se,S) semimagnetic semiconductors. The photo-and electroluminescence properties of Pb1-xMnxTe ... Keywords: detector, electroluminescence, energy spectrum, infrared, nanolayer, photoluminescence, semimagnetic semiconductor, sensitive

M. A. Mehrabova; I. R. Nuriyev; R. M. Mamishova; T. I. Kerimova

2011-11-01T23:59:59.000Z

297

Search for resonances in the dijet mass spectrum from 7 TeV pp collisions at CMS  

E-Print Network [OSTI]

A search for narrow resonances with a mass of at least 1 TeV in the dijet mass spectrum is performed using pp collisions at ?s = 7 TeV corresponding to an integrated luminosity of 1 fb[superscript ?1], collected by the CMS ...

CMS Collaboration

298

The effect of impurities on the doping and VOC of CdTe/CdS thin film solar cells  

Science Journals Connector (OSTI)

The effect of introducing impurities in CdTe, namely antimony (Sb) and oxygen (O), on the net carrier concentration in CdS/CdTe solar cells and on their open-circuit voltage (VOC) has been investigated. Oxygen was introduced in the CdTe films during the deposition of this layer by the close-spaced sublimation process. The total pressure was held constant at 1330 Pa (N2 and O2). The amount of oxygen was varied by varying its partial pressure. Antimony was introduced into CdTe using a post-deposition diffusion process. Following the deposition of CdTe a thin film (a few nm) of Sb was deposited onto the CdTe surface and subsequently heat-treated to cause in-diffusion of Sb. The temperature and time during the diffusion process were varied in the range of 300–525 °C and 20–160 min respectively. In both instances it was possible to vary (increase) the doping concentration in CdTe. The increase in doping was accompanied by an increase in VOC. However, in all instances the doping in CdTe reached a maximum value, beyond which further increases were not possible leading to saturation in VOC. The highest VOC measured was similar to state-of-the-art values in the range of 800–830 mV, and the highest doping concentration measured was in the 1016 cm? 3 range.

H. Zhao; Alvi Farah; D. Morel; C.S. Ferekides

2009-01-01T23:59:59.000Z

299

PHOTOREFRACTIVE RESPONSE OF CdTe:V UNDER AC ELECTRIC FIELD FROM 1 TO 1.5m  

E-Print Network [OSTI]

for the extension of the photorefractive effect towards the wavelength region of 1.3-1.5µm. Cadmium Telluride (CdTe conduction (hole-electron competition). Sample and experimental set-up presentations : The CdTe sample we

300

Cadmium sulfate and CdTe-quantum dots alter DNA repair in zebrafish (Danio rerio) liver cells  

SciTech Connect (OSTI)

Increasing use of quantum dots (QDs) makes it necessary to evaluate their toxicological impacts on aquatic organisms, since their contamination of surface water is inevitable. This study compares the genotoxic effects of ionic Cd versus CdTe nanocrystals in zebrafish hepatocytes. After 24 h of CdSO{sub 4} or CdTe QD exposure, zebrafish liver (ZFL) cells showed a decreased number of viable cells, an accumulation of Cd, an increased formation of reactive oxygen species (ROS), and an induction of DNA strand breaks. Measured levels of stress defense and DNA repair genes were elevated in both cases. However, removal of bulky DNA adducts by nucleotide excision repair (NER) was inhibited with CdSO{sub 4} but not with CdTe QDs. The adverse effects caused by acute exposure of CdTe QDs might be mediated through differing mechanisms than those resulting from ionic cadmium toxicity, and studying the effects of metallic components may be not enough to explain QD toxicities in aquatic organisms. - Highlights: • Both CdSO{sub 4} and CdTe QDs lead to cell death and Cd accumulation. • Both CdSO{sub 4} and CdTe QDs induce cellular ROS generation and DNA strand breaks. • Both CdSO{sub 4} and CdTe QDs induce the expressions of stress defense and DNA repair genes. • NER repair capacity was inhibited with CdSO{sub 4} but not with CdTe QDs.

Tang, Song; Cai, Qingsong [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States); Chibli, Hicham [Department of Biomedical Engineering, McGill University, Montréal, QC H3A 2B4 (Canada); Allagadda, Vinay [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States); Nadeau, Jay L. [Department of Biomedical Engineering, McGill University, Montréal, QC H3A 2B4 (Canada); Mayer, Gregory D., E-mail: greg.mayer@ttu.edu [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States)

2013-10-15T23:59:59.000Z

Note: This page contains sample records for the topic "te rm te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY  

E-Print Network [OSTI]

STRUCTURAL AND CHEMICAL STUDIES ON CdTe/CdS THIN FILM SOLAR CELLS WITH ANALYTICAL TRANSMISSION, A. N. Tiwari Thin Film Physics Group, Laboratory for Solid State Physics, Technopark ETH-Building, Technoparkstr. 1, CH-8005 Zurich, Switzerland ABSTRACT: CdTe/CdS thin £lm solar cells have been grown by closed

Romeo, Alessandro

302

Sonochemical and hydrothermal synthesis of PbTe nanostructures with the aid of a novel capping agent  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: • PbTe nanostructures were prepared with the aid of Schiff-base compound. • Sonochemical and hydrothermal methods were employed to fabricate PbTe nanostrucrues. • The effect of preparation parameters on the morphology of PbTe was investigated. - Abstract: In this work, a new Schiff-base compound derived from 1,8-diamino-3,6-dioxaoctane and 2-hydroxy-1-naphthaldehyde marked as (2-HyNa)-(DaDo) was synthesized, characterized, and then used as capping agent for the preparation of PbTe nanostructures. To fabricate PbTe nanostructures, two different synthesis methods; hydrothermal and sonochemical routes, were applied. To further investigate, the effect of preparation parameters like reaction time and temperature in hydrothermal synthesis and sonication time in the presence of ultrasound irradiation on the morphology and purity of the final products was tested. The products were analyzed with the aid of SEM, TEM, XRD, FT-IR, and EDS. Based on the obtained results, it was found that pure cubic phased PbTe nanostructures have been obtained by hydrothermal and sonochemical approaches. Besides, SEM images showed that cubic-like and rod-like PbTe nanostructures have been formed by hydrothermal and sonochemical methods, respectively. Sonochemical synthesis of PbTe nanostructures was favorable, because the synthesis time of sonochemical method was shorter than that of hydrothermal method.

Fard-Fini, Shahla Ahmadian [Department of Chemistry, Payame Noor University, P.O. Box 19395-3697, Tehran, Islamic Republic of Iran (Iran, Islamic Republic of); Salavati-Niasari, Masoud, E-mail: salavati@kashanu.ac.ir [Department of Inorganic Chemistry, Faculty of Chemistry, University of Kashan, P.O. Box 87317-51167, Kashan, Islamic Republic of Iran (Iran, Islamic Republic of); Institute of Nano Science and Nano Technology, University of Kashan, P.O. Box 87317-51167, Kashan, Islamic Republic of Iran (Iran, Islamic Republic of); Mohandes, Fatemeh [Department of Inorganic Chemistry, Faculty of Chemistry, University of Kashan, P.O. Box 87317-51167, Kashan, Islamic Republic of Iran (Iran, Islamic Republic of)

2013-10-15T23:59:59.000Z

303

Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller  

E-Print Network [OSTI]

Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller Lawrence Berkeley observed local vibrational modes LVM's arising from DX-hydrogen complex in AlSb. Hydrogen was diffused into bulk AlSb:Se and AlSb:Te by annealing in sealed quartz ampoules with either hydrogen gas or methanol CH

McCluskey, Matthew

304

Measurement of long-range pseudorapidity correlations and azimuthal harmonics in $\\sqrt{s_{\\mathrm{NN}}}$ = 5.02 TeV proton-lead collisions with the ATLAS detector  

E-Print Network [OSTI]

Measurements of two-particle correlation functions and the first five azimuthal harmonics, $v_1$ to $v_5$, are presented, using 28 $\\mathrm{nb}^{-1}$ of $p$+Pb collisions at a nucleon-nucleon center-of-mass energy of $\\sqrt{s_{\\mathrm{NN}}}=5.02$ TeV measured with the ATLAS detector at the LHC. Significant long-range ``ridge-like'' correlations are observed for pairs with small relative azimuthal angle ($|\\Delta\\phi|2\\pi/3$) over the transverse momentum range $0.44$ GeV. The $v_2(p_{\\rm T})$, $v_3(p_{\\rm T})$ and $v_4(p_{\\rm T})$ are compared to the $v_n$ coefficients in Pb+Pb collisions at $\\sqrt{s_{\\mathrm{NN}}} =2.76$ TeV with similar event multiplicities. Reasonable agreement is observed after accounting for the difference in the average $p_{\\rm T}$ of particles produced in the two collision systems.

ATLAS Collaboration

2014-09-05T23:59:59.000Z

305

A New LCA Methodology of Technology Evolution (TE-LCA) and its Application to the Production of Ammonia (1950-2000) (8 pp)  

Science Journals Connector (OSTI)

This paper presents a new LCA method of technology evolution (TE-LCA), and its application to the production ... over the last fifty years. The TE-LCA of a chemical process is the procedure ... then transformed ...

Ramon Mendivil; Ulrich Fischer…

2006-03-01T23:59:59.000Z

306

Open-circuit voltage, fill factor, and efficiency of a CdS/CdTe solar cell  

SciTech Connect (OSTI)

The dependences of the open-circuit voltage, fill factor, and efficiency of the thin-film CdS/CdTe solar cell on the resistivity {rho} and carrier lifetime {tau} in the absorbing CdTe layer were studied. In the common case in which the uncompensated acceptor concentration and the electron lifetime in the CdTe layer are within 10{sup 15}-10{sup 16} cm{sup -3} and 10{sup -10}-10{sup -9} s, the calculation results correspond to the achieved efficiency of the best thin-film CdS/CdTe solar cells. It was shown that, by decreasing {rho} and increasing {tau} in the absorbing CdTe layer, the open-circuit voltage, fill factor, and efficiency can be substantially increased, with their values approaching the theoretical limit for such devices.

Kosyachenko, L. A., E-mail: lakos@chv.ukrpack.net; Grushko, E. V. [Yuriy Fedkovych Chernivtsi National University (Ukraine)

2010-10-15T23:59:59.000Z

307

MATERIALS FOR SOLAR PHOTOCELLS : PLACE OF CdTe Laboratoire de Physique des Solides C. N. R. S., 1, place Aristide-Briand, 92190 Meudon, France  

E-Print Network [OSTI]

MATERIALS FOR SOLAR PHOTOCELLS : PLACE OF CdTe M. RODOT Laboratoire de Physique des Solides C. N. R général, puis appliqués à CdTe. On montre que CdTe est l'un des matériaux les plus prometteurs. Une revue des cellules au CdTe doivent encore être obtenues. Abstract. 2014 The choice of the best materials

Paris-Sud XI, Université de

308

HOMOGENEITY ALONG Cl-COMPENSATED THM GROWN CdTe INGOT NGO-TICH-PHUOC, G. M. MARTIN, C. BELIN and E. FABRE  

E-Print Network [OSTI]

195 HOMOGENEITY ALONG Cl-COMPENSATED THM GROWN CdTe INGOT NGO-TICH-PHUOC, G. M. MARTIN, C. BELIN resistivity CdTe is believed to present some potentialities as a material for y-rays detection at room carried out [8-9]. This paper presents an assessment of Cl-compen- sated, THM grown CdTe ingots : emphasis

Paris-Sud XI, Université de

309

THE RELATIONSHIP OF CdS/CdTe CELL BAND PROFILES TO J-V CHARACTERISTICS AND BIAS-DEPENDENT QUANTUM EFFICIENCY  

E-Print Network [OSTI]

-over, and, in some cases, long J-V and capacitance transient effects. CdTe is highly compensated containing by charge in the bulk CdTe within the absorber. PATHWAYS TO INCREASED EFFICIENCY There are several general to realize in practice. One pathway is by increasing the net negative charge in the CdTe by "p-type doping

Sites, James R.

310

Investigation of the evolution of single domain ,,111...B CdTe films by molecular beam epitaxy on miscut ,,001...Si substrate  

E-Print Network [OSTI]

Investigation of the evolution of single domain ,,111...B CdTe films by molecular beam epitaxy; accepted for publication 22 July 1998 A comprehensive view of the microstructure of 111 B CdTe films grown and scanning transmission electron microscopy. It is found that in the initial growth stage, CdTe nucleates

Pennycook, Steve

311

The irradiation hardness of CdTe solar cells was inves-tigated for extremely high fluence of protons (up to  

E-Print Network [OSTI]

ABSTRACT The irradiation hardness of CdTe solar cells was inves- tigated for extremely high fluence high fluences. One general degradation characteristic for CdTe cells was calculated using a damage dose formulation, allowing a comprehen- sive comparison with other cell technologies. CdTe cells show an excellent

Romeo, Alessandro

312

FLEXIBLE CdTe SOLAR CELLS BY A LOW TEMPERATURE PROCESS ON ITO/ZnO COATED A. Salavei, I. Rimmaudo, F. Piccinelli1  

E-Print Network [OSTI]

FLEXIBLE CdTe SOLAR CELLS BY A LOW TEMPERATURE PROCESS ON ITO/ZnO COATED POLYMERS A. Salavei, I of a deposition process for flexible CdTe devices on ITO/ZnO coated polymers. Optimization of fabrication process will be discussed. Keywords: Flexible Substrate, CdTe, ITO, Laser Processing, Thin Film Solar Cell 1 INTRODUCTION

Romeo, Alessandro

313

TeV J2032+4130: a not-so-dark Accelerator?  

E-Print Network [OSTI]

The HEGRA gamma-ray source TeV J2032+4130 is considered the prototypical 'dark accelerator', since it was the first TeV source detected with no firm counterparts at lower frequencies. The Whipple collaboration observed this source in 2003-5 and the emission hotspot appears displaced about 9 arcminutes to the northeast of the HEGRA position, though given the large positional uncertainties the HEGRA and Whipple positions are consistent. Here we report on Westerbork Synthesis Radio Telescope (WSRT), Very Large Array (VLA), Chandra and INTEGRAL data covering the locations of the Whipple and HEGRA hotspots. We confirm a dual-lobed radio source (also see Marti et al., 2007) coincident with the Whipple hotspot, as well as a weak, partially non-thermal shell-like object, with a location and morphology very similar to the HEGRA source, in our WSRT and mosaicked VLA datasets, respectively. Due to its extended nature, it is likely that the latter structure is a more plausible counterpart of the reported very high energy (VHE) gamma-ray emissions in this region. If so, TeV J2032+4130 may not be a 'dark accelerator' after all. Further observations with the new generation of imaging Cherenkov telescopes are needed to pin down the precise location and morphology of the TeV emission region and thus clear up the confusion over its possible lower frequency counterparts.

Yousaf M. Butt; Jorge A. Combi; Jeremy Drake; John P. Finley; Alexander Konopelko; Matthew Lister; Jerome Rodriguez; Debra Shepherd

2006-11-23T23:59:59.000Z

314

Accelerated Stress Testing and Diagnostic Analysis of Degradation in CdTe Solar Cells  

SciTech Connect (OSTI)

The primary goal of this study was to ascertain the presence and types of mechanisms affecting CdS/CdTe device stability in the temperature range of 60 to 120 ..deg..C. It should be noted that the results presented were specific to cells made using the specific growth conditions described.

Albin, D. S.

2008-11-01T23:59:59.000Z

315

First measurement of hadronic event shapes in pp collisions at ?s = 7 TeV  

E-Print Network [OSTI]

Hadronic event shapes have been measured in proton–proton collisions at ?s =7 TeV, with a data sample collected with the CMS detector at the LHC. The sample corresponds to an integrated luminosity of 3.2 pb-1. Event-shape ...

CMS Collaboration

316

Results on CP Violation from Belle T.E. Browder representing the Belle Collaboration  

E-Print Network [OSTI]

Results on CP Violation from Belle T.E. Browder representing the Belle Collaboration Department of Physics, University of Hawaii, Honolulu, Hawaii Abstract. I describe the recent measurement of the CP In 1973, Kobayashi and Maskawa (KM) first proposed a model where CP violation is incorporated

Browder, Tom

317

14%-efficient flexible CdTe solar cells on ultra-thin glass substrates  

SciTech Connect (OSTI)

Flexible glass enables high-temperature, roll-to-roll processing of superstrate devices with higher photocurrents than flexible polymer foils because of its higher optical transmission. Using flexible glass in our high-temperature CdTe process, we achieved a certified record conversion efficiency of 14.05% for a flexible CdTe solar cell. Little has been reported on the flexibility of CdTe devices, so we investigated the effects of three different static bending conditions on device performance. We observed a consistent trend of increased short-circuit current and fill factor, whereas the open-circuit voltage consistently dropped. The quantum efficiency under the same static bend condition showed no change in the response. After storage in a flexed state for 24 h, there was very little change in device efficiency relative to its unflexed state. This indicates that flexible glass is a suitable replacement for rigid glass substrates, and that CdTe solar cells can tolerate bending without a decrease in device performance.

Rance, W. L.; Burst, J. M.; Reese, M. O.; Gessert, T. A.; Metzger, W. K.; Barnes, T. M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Meysing, D. M.; Wolden, C. A. [Colorado School of Mines, Golden, Colorado 80401 (United States); Garner, S.; Cimo, P. [Corning Incorporated, Corning, New York 14831 (United States)

2014-04-07T23:59:59.000Z

318

MilagroA TeV Observatory for Gamma Ray Bursts  

E-Print Network [OSTI]

Milagro­A TeV Observatory for Gamma Ray Bursts B.L. Dingus and the Milagro Collaboration Los energy gamma-rays from gamma-ray bursts. The highest energy gamma rays supply very strong constraints on the nature of gamma-ray burst sources as well as fundamental physics. Because the highest energy gamma-rays

California at Santa Cruz, University of

319

Rational Synthesis of Ultrathin n-Type Bi2Te3 Nanowires with Enhanced Thermoelectric Properties  

E-Print Network [OSTI]

, which can generate electricity by recovering waste heat or be used as solid-state cooling devices, have-based thermoelectric power generation and solid-state cooling devices with superior performance in a reliableRational Synthesis of Ultrathin n-Type Bi2Te3 Nanowires with Enhanced Thermoelectric Properties

Xu, Xianfan

320

Expectations for neutron-antineutron oscillation time from TeV scale baryogenesis  

SciTech Connect (OSTI)

A TeV scale extension of the standard model that incorporates the seesaw mechanism for neutrino masses along with quark-lepton unification is presented. It is shown that this model leads to the {Delta}B= 2 baryon number violating process of neutron-antineutron (n-bar n) oscillation. The model has all the ingredients to generate the observed baryon asymmetry of the universe using the B-violating decay of a scalar field involved in the seesaw mechanism. The B-violating decay arises from the exchange of color sextet scalars which have TeV scale masses. Baryogenesis occurs below the sphaleron decoupling temperature and has been termed post-sphaleron baryogenesis. Here we show that the constraints of TeV scale baryogenesis, when combined with the neutrino oscillation data and restrictions from flavor changing neutral currents mediated by the colored scalars imply an upper limit on the n-bar n oscillation time of 5 Multiplication-Sign 10{sup 10} sec. regardless of the quark-lepton unification scale. If this scale is relatively low, in the (200 - 250) TeV range, {tau}{sub n-bar} {sub n} is predicted to be less than 10{sup 10} sec., which is accessible to the next generation of proposed experiments.

Babu, K. S. [Department of Physics, Oklahoma State University, Stillwater, OK 74078 (United States); Bhupal Dev, P. S. [Consortium for Fundamental Physics, School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL (United Kingdom); Fortes, Elaine C. F. S. [Instituto de Fisica Teorica-Universidade Estadual Paulista, R. Dr. Bento Teobaldo Ferraz 271, Sao Paulo-SP, 01140-070 (Brazil); Mohapatra, Rabindra N. [Maryland Center for Fundamental Physics and Department of Physics, University of Maryland, College Park, MD 20742 (United States)

2013-05-23T23:59:59.000Z

Note: This page contains sample records for the topic "te rm te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

REVIEW OF OPTICAL APPLICATIONS OF CdTe Mobil Tyco Solar Energy Corporation 16 Hickory Drive  

E-Print Network [OSTI]

REVIEW OF OPTICAL APPLICATIONS OF CdTe R. O. BELL Mobil Tyco Solar Energy Corporation 16 Hickory of optical applications. These include electrooptic modulation, high power laser windows, electroluminescence will be paid to the various optical absorption mechanisms and the effects of impurities on the optical behavior

Paris-Sud XI, Université de

322

Investigation of deep level defects in CdTe thin films  

SciTech Connect (OSTI)

In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 °C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

Shankar, H.; Castaldini, A. [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy); Dieguez, E.; Rubio, S. [Crystal Growth Lab, Department of Materials Physics, Faculty of Science, University Autonoma of Madrid, Ciudad Universitaria de Cantoblanco, 28049, Madrid (Spain); Dauksta, E.; Medvid, A. [Institute of Technical Physics, Riga Technical University, 14 Azenes Str, Riga, Latvia, Department of Materials (Latvia); Cavallini, A. [Department of Physics and Astronomy,University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy)

2014-02-21T23:59:59.000Z

323

Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices  

SciTech Connect (OSTI)

We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t{sub 1}) have provided insightful correlation with broad device functionality. However, we have more recently found that t{sub 1} does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t{sub 1} and the slower TRPL decay (t{sub 2}) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t{sub 2}. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t{sub 2}. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t{sub 2}, and therefore t{sub 2} data may demonstrate significant scatter when correlated with performance parameters.

Gessert, T. A.; Dhere, R. G.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Bergeson, J. D.

2011-01-01T23:59:59.000Z

324

Nanoassembly control and optical absorption in CdTe-ZnO nanocomposite thin films  

SciTech Connect (OSTI)

The spatial distribution of CdTe nanoparticles within a ZnO thin-film matrix was manipulated using a dual-source, sequential radio-frequency (RF)-sputter deposition technique to produce nanocomposite materials with tuned spectral absorption characteristics. The relative substrate exposure time to each sputtering source was used to control the semiconductor phase connectivity, both within the film plane and along the film growth direction, to influence the degree of photocarrier confinement and the resulting optical transition energies exhibited by the CdTe phase. Significant changes (up to {Delta}E {approx_equal} 0.3 eV) in the absorption onset energy for the CdTe nanoparticle ensemble were produced through modification in the extended structure of the semiconductor phase. Raman spectroscopy, cross-sectional transmission electron microscopy, and x-ray diffraction were used to confirm the phase identity of the CdTe and ZnO and to characterize the nanostructures produced in these composite films. Isochronal annealing for 5 min at temperatures up to 800 deg. C further indicated the potential to improve film crystallinity as well as to establish the post-deposition thermal processing limits of stability for the semiconductor phase. The study highlights the significance of ensemble behavior as a means to influence quantum-scale semiconductor optical characteristics of import to the use of such materials as the basis for a variety of optoelectronic devices, including photosensitized heterojunction components in thin film photovoltaics.

Potter, B. G. Jr. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States); Beal, R. J.; Allen, C. G. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States)

2012-02-01T23:59:59.000Z

325

OpTeC Annual Meeting Agenda 1 11 Sept. 2014 Optical Science & Engineering Conference  

E-Print Network [OSTI]

Devices for Polarization Control 9:05 am Tianbo Liu & David Dickensheets MSU Electrical and Computer in an SOFC #12;OpTeC Annual Meeting Agenda 2 11 Sept. 2014 9:40 am Alexander Mikhaylov,a Lauren Bennett

Maxwell, Bruce D.

326

Enhanced Thermoelectric Properties of Solution Grown Bi2Te3-xSex Nanoplatelet Composites  

E-Print Network [OSTI]

is the lattice contributions) and T is average absolute temperature. An ideal thermoelectric material on the efficiency of thermoelectric materials, and hence a decoupling of these parameters is required to improveEnhanced Thermoelectric Properties of Solution Grown Bi2Te3-xSex Nanoplatelet Composites Ajay Soni

Xiong, Qihua

327

DAnTE: a statistical tool for quantitative analysis of -omics data  

Science Journals Connector (OSTI)

......employing the Shapiro-Wilks test and features two non-parametric hypothesis tests (Wilcoxon rank sum test and Kruskal-Wallis test) when the normality assumption fails to hold. 3 SUMMARY DAnTE is designed as a complete downstream analysis......

Ashoka D. Polpitiya; Wei-Jun Qian; Navdeep Jaitly; Vladislav A. Petyuk; Joshua N. Adkins; David G. Camp; II; Gordon A. Anderson; Richard D. Smith

2008-07-01T23:59:59.000Z

328

High thermoelectric performance by resonant dopant indium in nanostructured SnTe  

E-Print Network [OSTI]

From an environmental perspective, lead-free SnTe would be preferable for solid-state waste heat recovery if its thermoelectric figure-of-merit could be brought close to that of the lead-containing chalcogenides. In this ...

Liao, Bolin

329

Study of forward Z + jet production in pp collisions at ?s = 7 TeV  

E-Print Network [OSTI]

A measurement of the Z(? ? [superscript +] ? [superscript ?]) + jet production cross-section in pp collisions at a centre-of-mass energy ?s = 7 TeV is presented. The analysis is based on an integrated luminosity of 1.0 ...

Williams, Michael

330

Spray Deposition of High Quality CuInSe2 and CdTe Films: Preprint  

SciTech Connect (OSTI)

A number of different ink and deposition approaches have been used for the deposition of CuInSe2 (CIS), Cu(In,Ga)Se2 (CIGS), and CdTe films. For CIS and CIGS, soluble precursors containing Cu, In, and Ga have been developed and used in two ways to produce CIS films. In the first, In-containing precursor films were sprayed on Mo-coated glass substrates and converted by rapid thermal processing (RTP) to In2Se3. Then a Cu-containing film was sprayed down on top of the In2Se3 and the stacked films were again thermally processed to give CIS. In the second approach, the Cu-, In-, and Ga-containing inks were combined in the proper ratio to produce a mixed Cu-In-Ga ink that was sprayed on substrates and thermally processed to give CIGS films directly. For CdTe deposition, ink consisting of CdTe nanoparticles dispersed in methanol was prepared and used to spray precursor films. Annealing these precursor films in the presence of CdCl2 produced large-grained CdTe films. The films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). Optimized spray and processing conditions are crucial to obtain dense, crystalline films.

Curtis, C. J.; van Hest, M.; Miedaner, A.; Leisch, J.; Hersh, P.; Nekuda, J.; Ginley, D. S.

2008-05-01T23:59:59.000Z

331

Could the Wein fireball be associated to the "orphan" TeV flares ?  

E-Print Network [OSTI]

TeV $\\gamma$-ray detections in flaring states without activity in X-rays from blazars have attracted much attention due to the irregularity of these "orphan" flares. Although the synchrotron self-Compton model has been very successful in explaining the spectral energy distribution and spectral variability of these sources, it has not been able to describe these atypical flaring events. On the other hand, an electron-positron pair plasma at the base of the AGN jet was proposed as the mechanism of bulk acceleration of relativistic outflows. This plasma in quasi-themal equilibrium called Wein fireball emits radiation at MeV-peak energies serving as target of accelerated protons. In this work we describe the "orphan" TeV flares presented in blazars 1ES 1959+650 and Mrk421 assuming geometrical considerations in the jet and evoking the interactions of Fermi-accelerated protons and MeV-peak target photons coming from the Wein fireball. After describing successfully these "orphan" TeV flares, we correlate the TeV $\\g...

Fraija, Nissim

2015-01-01T23:59:59.000Z

332

Industrial Upscaling of CdTe/CdS Thin Film Solar Cells , A. Bosioa  

E-Print Network [OSTI]

, with the participation of the Marcegaglia industrial group, IFIS Bank of Venice, the contribution of Ministry 905223. E-mail address: Nicola.Romeo@unipr.it (Nicola Romeo). 1 INTRODUCTION CdTe with its energy gap" which means that only a few microns of the material are needed to absorb 90% of photons with energy

Romeo, Alessandro

333

1. INTRODUCTION Polycrystalline CdTe thin films solar cells have shown long  

E-Print Network [OSTI]

to the solar panel that can be adapted to any kind of shape and is easy to deploy in space. We have developed1. INTRODUCTION Polycrystalline CdTe thin films solar cells have shown long term stable performance for the solar cell, therefore high specific power (ratio of out- put power to the weight) solar cells

Romeo, Alessandro

334

Nuclear structure relevant to neutrinoless double beta decay candidate {sup 130}Te and other recent results  

SciTech Connect (OSTI)

We have undertaken a series of single-nucleon and pair transfer reaction measurements to help constrain calculations of the nuclear matrix elements for neutrinoless double beta decay. In this talk, a short overview of measurements relevant to the {sup 130}Te?{sup 130}Xe system is given. Brief mention is made of other recent and forthcoming results.

Kay, B. P. [Physics Division, Argonne National Laboratory, Illinois 60439 (United States)

2013-12-30T23:59:59.000Z

335

Measuring the Invisible Higgs Width at the 7 and 8 TeV LHC  

E-Print Network [OSTI]

The LHC is well on track toward the discovery or exclusion of a light Standard Model (SM)-like Higgs boson. Such a Higgs has a very small SM width and can easily have large branching fractions to physics beyond the SM, making Higgs decays an excellent opportunity to observe new physics. Decays into collider-invisible particles are particularly interesting as they are theoretically well motivated and relatively clean experimentally. In this work we estimate the potential of the 7 and 8 TeV LHC to observe an invisible Higgs branching fraction. We analyze three channels that can be used to directly study the invisible Higgs branching ratio at the 7 TeV LHC: an invisible Higgs produced in association with (i) a hard jet; (ii) a leptonic Z; and (iii) forward tagging jets. We find that the last channel, where the Higgs is produced via weak boson fusion, is the most sensitive, allowing branching fractions as small as 40% to be probed at 20 inverse fb for masses in the range between 120 and 170 GeV, including in particular the interesting region around 125 GeV. We provide an estimate of the 8 TeV LHC sensitivity to an invisibly-decaying Higgs produced via weak boson fusion and find that the reach is comparable to but not better than the reach at the 7 TeV LHC. We further estimate the discovery potential at the 8 TeV LHC for cases where the Higgs has substantial branching fractions to both visible and invisible final states.

Yang Bai; Patrick Draper; Jessie Shelton

2011-12-19T23:59:59.000Z

336

First-principles calculations to investigate structural, electronic and optical properties of (BeTe)n/(CdS)n superlattices  

Science Journals Connector (OSTI)

Abstract Structural, electronic and optical properties of binary BeTe and CdS compounds and their (BeTe)n/(CdS)n superlattices (SLs) are investigated using the first-principles full potential linear muffin-tin orbitals method (FP-LMTO). The exchange–correlation potential is treated with the local density approximation of Perdew and Wang (LDA-PW). The ground-state properties are determined for the bulk materials (BeTe, CdS, and (BeTe)n/(CdS)n) in cubic phase. The calculated structural properties of BeTe and CdS compounds are in good agreement with available experimental and theoretical data. It is found that BeTe exhibit an indirect fundamental band gap and CdS and their superlattices (SLs) exhibit a direct fundamental band gap, which might make (BeTe)n/(CdS)n superlattices (SLs) materials promising and useful for optoelectronic applications. The fundamental band gap decreases with increasing the number of monolayer n.

L. Djoudi; M. Merabet; M. Boucharef; S. Benalia; D. Rached

2014-01-01T23:59:59.000Z

337

Optical contrast and laser-induced phase transition in GeCu{sub 2}Te{sub 3} thin film  

SciTech Connect (OSTI)

Fast crystallization and low power amorphization are essential to achieve rapid data recording and low power consumption in phase-change memory. This work investigated the laser-induced phase transition behaviors of GeCu{sub 2}Te{sub 3} film based on the reflectance of amorphous and crystalline states. The GeCu{sub 2}Te{sub 3} film showed a reflectance decrease upon crystallization, which was the opposite behavior in Ge{sub 2}Sb{sub 2}Te{sub 5} film. The crystallization starting time of the as-deposited GeCu{sub 2}Te{sub 3} film was as fast as that of the as-deposited Ge{sub 2}Sb{sub 2}Te{sub 5} film. Furthermore, the GeCu{sub 2}Te{sub 3} crystalline film was found to be reamorphized by laser irradiation at lower power and shorter pulse width than the Ge{sub 2}Sb{sub 2}Te{sub 5}.

Saito, Yuta; Sutou, Yuji; Koike, Junichi [Department of Materials Science, Tohoku University, 6-6-11-1016 Aoba-yama, Aoba-ku, Sendai 980-8579 (Japan)] [Department of Materials Science, Tohoku University, 6-6-11-1016 Aoba-yama, Aoba-ku, Sendai 980-8579 (Japan)

2013-02-04T23:59:59.000Z

338

Room-Temperature Ferromagnetism in a II-VI Diluted Magnetic Semiconductor Zn1-xCrxTe  

Science Journals Connector (OSTI)

The magnetic and magneto-optical properties of a Cr-doped II-VI semiconductor ZnTe were investigated. Magnetic circular dichroism measurements showed a strong interaction between the sp carriers and localized d spins, indicating that Zn1-xCrxTe is a diluted magnetic semiconductor. The Curie temperature of the film with x=0.20 was estimated to be 300±10???K, which is the highest value ever reported for a diluted magnetic semiconductor in which sp-d interactions were confirmed. In spite of its high Curie temperature, Zn1-xCrxTe film shows semiconducting electrical transport properties.

H. Saito; V. Zayets; S. Yamagata; K. Ando

2003-05-20T23:59:59.000Z

339

Formation of core/shell-like ZnSe(1?x)Te(x) nanocrystals due to equilibrium surface segregation  

SciTech Connect (OSTI)

We report results of equilibrium surface segregation in ZnSe{sub 1?x}Te{sub x} nanocrystals based on a computational analysis of coupled compositional, structural, and volume relaxation of the nanocrystals that employs Monte Carlo and conjugate-gradient methods according to a first-principles-parameterized description of interatomic interactions. We have determined the equilibrium concentration distribution as a function of nanocrystal size and composition for nanocrystal morphologies that include faceted equilibrium crystal shapes. The results identify the nanoparticle size and composition ranges that allow for self-assembly of core/shell-like nanocrystal structures characterized by a Te-deficient core and a Te-rich shell.

Pandey, Sumeet C.; Mountziaris, T. J.; Venkataraman, Dhandapani; Maroudas, Dimitris

2010-01-01T23:59:59.000Z

340

Tests of a calorimetric technique for measuring the energy of cosmic ray muons in the TeV energy range  

Science Journals Connector (OSTI)

Previous energy measurements of cosmic ray muons have used magnetic spectrometers to measure the momentum of muons. Measurements using magnets fail for muons in the TeV range because at ultra-high muon energies, ...

A. P. Chikkatur; L. Bugel; A. Alton…

1997-06-01T23:59:59.000Z

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341

Formation of ohmic contacts to low-resistivity Cd1 ? x Mg x Te alloys for photovolatic applications  

Science Journals Connector (OSTI)

Electrical properties of the Cd1 ? x Mg x Te alloys of various composition (0.1 ? x ? 0.3) are studied. It is established that at x = 0.1, a low-resistivity p-ty...

O. A. Parfenyuk; M. I. Ilashchuk; K. S. Ulyanitsky

2008-11-01T23:59:59.000Z

342

Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions: Preprint  

SciTech Connect (OSTI)

An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe photovoltaic devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

Teeter, G.; Asher, S.

2008-05-01T23:59:59.000Z

343

Study of hadronic event-shape variables in multijet final states in pp collisions at ?s = 7 TeV  

E-Print Network [OSTI]

Event-shape variables, which are sensitive to perturbative and nonperturbative aspects of quantum chromodynamic (QCD) interactions, are studied in multijet events recorded in proton-proton collisions at ?s = 7 TeV. Events ...

Apyan, Aram

344

Combined results of searches for the standard model Higgs boson in pp collisions at ?s = 7 TeV  

E-Print Network [OSTI]

Combined results are reported from searches for the standard model Higgs boson in proton–proton collisions at ?s = 7 TeV in five Higgs boson decay modes: ??, bb, ?? , WW, and ZZ. The explored Higgs boson mass range is ...

Alver, B.

345

Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory  

SciTech Connect (OSTI)

Effects of GaSb doping on phase change characteristics of Ge-Sb-Te material are investigated by in situ resistance and x-ray diffraction measurement, optical spectroscopy, and x-ray photoelectron spectroscopy. The crystallization temperature and data retention of Ge-Sb-Te material increase significantly by the addition of GaSb, which results from the high thermal stability of amorphous GaSb. In addition, GaSb-doped Ge-Sb-Te material exhibits faster crystallization speed due to the change in electronic states as a result of the formation of chemical bonds with Ga element. Incorporation of GaSb is highly effective way to enhance the comprehensive performance of Ge-Sb-Te material for phase change memory.

Lu, Yegang [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China) [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Graduate School of Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Zhonghua; Song, Sannian; Cheng, Limin; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)] [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Shen, Xiang; Wang, Guoxiang; Dai, Shixun [Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)] [Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)

2013-06-17T23:59:59.000Z

346

Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance  

SciTech Connect (OSTI)

We report on CdS/CdTe photovoltaic devices that contain a thin Ta2O5 film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta2O5 films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta2O5 interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta2O5 interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.

Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor

2012-05-05T23:59:59.000Z

347

Polycrystalline CdTe Solar Cells on Buffered Commercial TCO-Coated Glass with Efficiencies Above 15%  

SciTech Connect (OSTI)

EPIR Technologies, Inc. reports the production of thin film polycrystalline CdTe devices with National Renewable Energy Laboratory (NREL)-verified efficiencies above 15%. While previous reporting of high efficiency poly-CdTe solar cells utilized high-temperature technical glass, EPIR's cells were produced on commercially-available conductive glass. The devices exhibit fill factors up to 77% and short-circuit current densities around 24 mA/cm{sup 2}. EPIR developed a robust process for producing thin film CdTe solar cells through implementation of a high resistivity SnO{sub 2} buffer layer and optimization of the CdS window layer thickness. The effects of the high resistivity buffer layer on device performance were investigated, demonstrating improved overall performance and yield. To our knowledge, these are among the highest efficiencies yet reported and NREL-verified for a thin film CdTe solar cell fabricated using commercial conductive glass.

Banai, R.; Blissett, C.; Buurma, C.; Colegrove, E.; Bechmann, P.; Ellsworth, J.; Morley, M.; Barnes, S.; Lennon, C.; Gilmore, C.; Dhere, R.; Bergeson, J.; Scott, M.; Gessert, T.

2011-01-01T23:59:59.000Z

348

Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions (Poster)  

SciTech Connect (OSTI)

An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe PV devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

Teeter, G.; Asher, S.

2008-05-01T23:59:59.000Z

349

The growth of CdTe/GaAs heteroepitaxial films by metal–organic chemical vapor deposition  

Science Journals Connector (OSTI)

A process for the growth of CdTe/GaAs heteroepitaxialfilms using metal–organic chemical vapor deposition(MOCVD) has been developed. The initial results of the determination of the deposition mechanism are reported. A pilot production demonstration using experimentally determined operating conditions has been completed. This is the first reported pilot production of CdTe/GaAs using 2 in. diam GaAs substrates in a multiple slice commercially manufactured MOCVD system. The results reported therein demonstrate that MOCVD is a reliable reproducible production worthy process for preparation of CdTe/GaAs heterostructures. These results are applicable to a wide variety of CdTe based device technologies including IR detection fiber optics solar cells and others.

Philip L. Anderson

1986-01-01T23:59:59.000Z

350

A STUDY ON SOLUTION (THM) GROWN TI DOPED CdTe F. V. WALD and R. O. BELL  

E-Print Network [OSTI]

203 A STUDY ON SOLUTION (THM) GROWN TI DOPED CdTe F. V. WALD and R. O. BELL Mobil Tyco Solar Energy might, perhaps, expect somewhat different results. The growth was carried out by THM [3] with a furnace

Boyer, Edmond

351

Appendix B: CArBon dioxide CApture teChnology SheetS  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

sorbents sorbents B-14 Pre-Combustion sorbents u.s. DePartment of energy aDvanCeD Carbon DioxiDe CaPture r&D Program: teChnology uPDate, may 2013 aDvanCeD Carbon DioxiDe CaPture teChnology for low-rank Coal integrateD gasifiCation CombineD CyCle (igCC) systems primary project goals TDA will investigate the technical and economic advantages of using an integrated carbon dioxide (CO 2 ) sorbent and water-gas shift (WGS) catalyst system in an integrated gasifi- cation combined cycle (IGCC) power plant, fueled with low-rank coal, and designed to capture more than 90% of the CO 2 emissions. technical goals * TDA will evaluate the physical mix of the sorbent and catalyst pellets within the same

352

High-throughput manufacturing of thin-film CdTe photovoltaic modules  

Science Journals Connector (OSTI)

The main obstacle to the wide spread use of photovoltaics as a major source of renewable energy has been cost. The key to lowering the cost of photovoltaic generated energy to the levels of conventional sources of energy lays in the development of low cost high throughput manufacturing processes. Solar Cells Inc. (SCI) believes this can be achieved for CdTe based modules by integrating its PV fabrication processes with a modern glass plant. That is sand in finished module out. It is also necessary to have a stable end product in order to gain wide acceptance. SCI has been working at producing large-area CdS/CdTe photovoltaic (PV) modules and the processes developed at SCI can be scaled to achieve high production levels at cost-effective rates.

Alan McMaster; Steve Johnson

1999-01-01T23:59:59.000Z

353

Control of carrier lifetime in PbTe nipi-superlattices by external photoinjection  

Science Journals Connector (OSTI)

Photoexcitation of PbTe doping superlattices at different intensity levels can have a large influence on nonequilibrium carrier lifetime which in turn is determined both by PbTe bulk properties and details of the superlattice periodic potential. Such “tunability” in the recombination rate is examined theoretically in a model which considers details of carrier tunneling and thermal excitation in the superlattice as well as the role of Auger recombination as a decay channel at high densities. Good agreement is obtained with experimental studies of transient photoconductivity in which picosecond pulses from a Nd:YAG laser have been used to vary the effective lifetime from less than 2 nsec up to 10 usec. We also show how the presence of 300 K background radiation has an important influence on practical recombination rates.

J. Oswald; G. Bauer; W.C. Goltsos; A.V. Nurmikko

1988-01-01T23:59:59.000Z

354

EE&RE, Session: CdTe - Progress and Roadmap Alignment (Presentation)  

SciTech Connect (OSTI)

This project supports the Solar America Initiative by: (1) assistance to SAI Incubators (Primestar Solar, AvA Solar); (2) providing industry with baseline understanding of CdS/CdTe device formation and reliability--incorporation of low-cost, high quality TCOs, functionality and options for buffer layers, effect of various CdS options, effect of and importance CdSTe alloy formation, effect and options for CdCl{sub 2} treatment, effect and options for back contact, and effect of residual impurities during all stages of device formation; (3) understanding modes and mechanisms of cell-level stability; and (4) establishment of CdTe PDIL Tool for rapid material and process screening.

Gessert, T.

2008-04-01T23:59:59.000Z

355

Thermoelectric properties of polycrystalline In4Se3 and In4Te3  

SciTech Connect (OSTI)

High thermoelectric performance of a single crystal layered compound In{sub 4}Se{sub 3} was reported recently. We present here an electrical and thermal transport property study over a wide temperature range for polycrystalline samples of In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3}. Our data demonstrate that these materials are lightly doped semiconductors, leading to large thermopower and resistivity. Very low thermal conductivity, below 1 W/m K, is observed. The power factors for In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3} are much smaller when compared with state-of-the-art thermoelectric materials. This combined with the very low thermal conductivity results in the maximum ZT value of less than 0.6 at 700 K for In{sub 4}Se{sub 3}.

Shi, Xun [Optimal Inc., Plymouth, Michigan 48170, USA; Cho, Jung Y [GM R& D and Planning, Warren, Michigan; Salvador, James R. [GM R& D and Planning, Warren, Michigan; Yang, Jihui [General Motors Corporation-R& D; Wang, Hsin [Oak Ridge National Laboratory (ORNL)

2010-01-01T23:59:59.000Z

356

Analysis of High-Te Plasmas Heated by HHFW in NSTX  

SciTech Connect (OSTI)

The implementation in TRANSP of a recent version of TORIC capable of calculating power deposition for HHFW conditions is used to analyze NSTX plasma under different operating conditions. The power deposition profile into the electrons is obtained for high-Te conditions - Te ? 5keV - obtained in He and D plasmas with ITB. HHFW heating of NBI-induced H-mode plasmas is discussed. At the RF onset the RF power is divided evenly between the electrons and the fast particles, but as the latter thermalize and the electron density increases, the HHFW power repartition shifts progressively toward the electrons. Power deposition profiles for the electrons and for the fast particles are shown.

LeBlanc, P.; Bell, R. E.; Bonoli, P.; Hosea, J. C.; Mazzucato, E.; Phillips, C. K.; Roquemore, A. L.; Ryan, P. M.; Taylor, G.; Wilson, J. R.; Yuh, H.

2009-06-26T23:59:59.000Z

357

Synthesis of CdTe/TiO{sub 2} nanoparticles and their photocatalytic activity  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: • CdTe/TiO{sub 2} photocatalysts were synthesized through a facile and convenient method. • The photosensitized degradation of RhB was largely enhanced by the composite. • Products prepared under MBSL condition exhibited higher photocatalytic activities. • The effect of MBSL had been investigated. - Abstract: Visible-light-induced CdTe/TiO{sub 2} photocatalysts were synthesized under multibubble sonoluminescence (MBSL) condition. The morphology, phase and optical properties of the products have been characterized by X-ray powder diffraction, field emission scan electron microscope, UV–vis absorption spectroscopy and photoluminescence spectroscopy. The results showed that as-prepared nanoparticles are well-crystallized with a better size distribution. In addition, the photocatalytic activities of products were evaluated using the photocatalytic degradation of rhodamine B as a probe reaction. The results showed that the products synthesized under MBSL condition exhibited higher photocatalytic activities than those without MBSL irradiation.

Li, Deliang, E-mail: lideliang@henu.edu.cn; Wang, Shijun; Wang, Jing; Zhang, Xiaodan; Liu, Shanhu

2013-10-15T23:59:59.000Z

358

Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots  

SciTech Connect (OSTI)

Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence.

Zhang, Lei, E-mail: mejswu@ust.hk; Chen, Haibin, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk; Wu, Jingshen, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong and Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong); Bi, Xianghong, E-mail: takubatch@gmail.com [Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong)

2014-05-15T23:59:59.000Z

359

Strongly confining bare core CdTe quantum dots in polymeric microdisk resonators  

SciTech Connect (OSTI)

We report on a simple route to the efficient coupling of optical emission from strongly confining bare core CdTe quantum dots (QDs) to the eigenmodes of a micro-resonator. The quantum emitters are embedded into QD/polymer sandwich microdisk cavities. This prevents photo-oxidation and yields the high dot concentration necessary to overcome Auger enhanced surface trapping of carriers. In combination with the very high cavity Q-factors, interaction of the QDs with the cavity modes in the weak coupling regime is readily observed. Under nanosecond pulsed excitation the CdTe QDs in the microdisks show lasing with a threshold energy as low as 0.33 ?J.

Flatae, Assegid, E-mail: assegid.flatae@kit.edu; Grossmann, Tobias; Beck, Torsten; Wiegele, Sarah; Kalt, Heinz [Institute of Applied Physics and DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede-Str.1, 76131 Karlsruhe (Germany)

2014-01-01T23:59:59.000Z

360

Surface characterization and electronic structure of HgTe nanocrystalline thin films  

Science Journals Connector (OSTI)

Mercury telluride (HgTe) nanocrystalline thin films were synthesized using an electrochemical deposition technique. The surface morphology of the thin films were investigated by atomic force microscopy (AFM) as a function of the film thickness which shows that an increase in film thickness increases the surface roughness. The scaling exponents such as roughness exponent, ? and growth exponent, ? associated with the film growth, determined from surface and power spectral analysis using AFM are found to be 0.88±0.05 and 0.21±0.04 respectively. The shifting of the valence and core levels to higher binding energy as evidenced from x-ray photoelectron spectroscopy, suggest the change in electronic structure of the nano-HgTe films possibly due to the surface roughness.

S. Rath, D. Paramanik, S. N. Sarangi, S. Varma, and S. N. Sahu

2005-11-08T23:59:59.000Z

Note: This page contains sample records for the topic "te rm te" from the National Library of EnergyBeta (NLEBeta).
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361

Evaluation of CdZnTe detectors for soft x-ray applications  

SciTech Connect (OSTI)

High resistivity CdZnTe is a very promising material for X-ray detection at room temperature or slightly below. Cooling a Cd[sub 0.8]Zn[sub 0.2]Te crystal down to [minus]30 C reduces the leakage current to the picoamp level, which enables the use of low-noise pulsed optical feedback instead of noisier resistive feedback preamplifiers. Also, longer shaping time constants at the linear amplifier can be used for the optimum resolution. The authors have obtained resolutions of 240 eV (FWHM) for the 5.9-keV [sup 55]Fe line at [minus]40 C and of 282 eV at [minus]30 C. The Fano factor for the material at [minus]40 C was calculated to be 0.14. These results compare well with the results obtained with peltier-cooled HgI[sub 2] detectors.

Niemelae, A.; Sipilae, H. (Outokumpu Instruments Oy, Espoo (Finland))

1994-08-01T23:59:59.000Z

362

Prospects for observing charginos and neutralinos at a 100 TeV proton-proton collider  

E-Print Network [OSTI]

We investigate the prospects for discovering charginos and neutralinos at a future $pp$ collider with $\\sqrt{s} = 100$ TeV. We focus on models where squarks and sleptons are decoupled -- as motivated by the LHC data. Our initial study is based on models where Higgsinos form the main component of the LSP and $W$-inos compose the heavier chargino states ($M_2 > \\mu$), though it is straightforward to consider the reverse situation also. We show that in such scenarios $W$-inos decay into $W^\\pm$, $Z$ and $h$ plus neutralinos almost universally. In the $W Z$ channel we compare signal and background in various kinematical distributions. We design simple but effective signal regions for the trilepton channel and evaluate discovery reach and exclusion limits. Assuming 3000 fb$^{-1}$ of integrated luminosity, $W$-inos could be discovered (excluded) up to 1.1 (1.8) TeV if the spectrum is not compressed.

Bobby S. Acharya; Krzysztof Bozek; Chakrit Pongkitivanichkul; Kazuki Sakurai

2014-10-06T23:59:59.000Z

363

Modified magnetism within the coherence volume of superconducting FeSeTe  

SciTech Connect (OSTI)

Neutron Scattering is used to probe magnetic interactions as superconductivity develops in opti- mally doped Fe_(1+ )Se_xTe_(1 x). Applying the first moment sum-rule to comprehensive neutron scatter- ing data, we extract the change in magnetic exchange energy [J_(R-R ) S_R S_R ] in the superconducting state referenced to the normal state. Oscillatory changes are observed for Fe-Fe displacements | R| < , where = 1.3(1) nm is the superconducting coherence length. Dominated by a large reduction in the second nearest neighbor exchange energy (-1.2(2) meV/Fe), the overall reduction in magnetic interaction energy is Hmag = 0.31(9) meV/Fe. Comparison to the superconducting condensation energy E_sc = 0.013(1) meV/Fe, which we extract from specific heat data, suggests the modified magnetism we probe drives superconductivity in Fe_(1+ )Se_xTe_(1 x)

Leiner, Jonathan C [ORNL; Thampy, Vivek [ORNL; Christianson, Andrew D [ORNL; Abernathy, D. [Oak Ridge National Laboratory (ORNL); Stone, Matthew B [ORNL; Lumsden, Mark D [ORNL; Sales, Brian C [ORNL; Safa-Sefat, Athena [ORNL; Hu, Jin [Tulane University; Mao, Zhiqiang [Tulane University; Bao, Wei [Renmin University of China; Broholm, Collin L [ORNL

2014-01-01T23:59:59.000Z

364

Neutrinoless double-$?$ decay in TeV scale Left-Right symmetric models  

E-Print Network [OSTI]

In this paper we study in detail the neutrinoless double beta decay in left-right symmetric models with right-handed gauge bosons at TeV scale which is within the presently accessible reach of colliders. We discuss the different diagrams that can contribute to this process and identify the dominant ones for the case where the right-handed neutrino is also at the TeV scale. We calculate the contribution to the effective mass governing neutrinoless double beta decay assuming type-I, and type-II dominance and discuss what are the changes in the effective mass due to the additional contributions. We also discuss the effect of the recent Daya-Bay and RENO measurements on $\\sin^2\\theta_{13}$ on the effective mass in different scenarios.

Joydeep Chakrabortty; H. Zeen Devi; Srubabati Goswami; Sudhanwa Patra

2012-04-11T23:59:59.000Z

365

The structural and electronic properties of amorphous HgCdTe from first-principles calculations  

Science Journals Connector (OSTI)

Amorphous mercury cadmium telluride (a-MCT) model structures, with x being 0.125 and 0.25, are obtained from first-principles calculations. We generate initial structures by computation alchemy method. It is found that most atoms in the network of amorphous structures tend to be fourfold and form tetrahedral structures, implying that the chemical ordered continuous random network with some coordination defects is the ideal structure for a-MCT. The electronic structure is also concerned. The gap is found to be 0.30 and 0.26 eV for a-Hg0.875Cd0.125Te and a-Hg0.75Cd0.25Te model structures, independent of the composition. By comparing with the properties of crystalline MCT with the same composition, we observe a blue-shift of energy band gap. The localization of tail states and its atomic origin are also discussed.

Huxian Zhao; Xiaoshuang Chen; Jianping Lu; Haibo Shu; Wei Lu

2014-01-01T23:59:59.000Z

366

Charge transport mechanisms in Schottky diodes based on low-resistance CdTe:Mn  

SciTech Connect (OSTI)

CdTe:Mn crystals with a resistivity of {approx}1 {Omega} cm at 300 K and Schottky diodes based on them are investigated. The electrical conductivity of the material and its temperature variations are explained in terms of the statistics of electrons and holes in semiconductors with allowance for the compensation processes. The ionization energy and the degree of compensation of the donors responsible for the conductivity are determined. It is shown that, in the case of forward connection and low reverse biases, the currents in Au/CdTe:Mn Schottky diode are determined by generation-recombination processes in the space-charge region. At higher reverse biases (above 1.5-2 V) the excess current is caused by electron tunneling from the metal to the semiconductor, and at even higher voltages (>6-7 V) an additional increase in the reverse current due to avalanche processes is observed.

Kosyachenko, L. A., E-mail: lakos@chv.ukrpack.net; Yurtsenyuk, N. S.; Rarenko, I. M.; Sklyarchuk, V. M.; Sklyarchuk, O. F.; Zakharuk, Z. I.; Grushko, E. V. [Chernivtsi National University (Ukraine)

2013-07-15T23:59:59.000Z

367

Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys  

SciTech Connect (OSTI)

This study investigates the recombination dynamics in highly mismatched ZnTeO alloys using time-resolved photoluminescence (PL) spectroscopy. The large PL energy redshift with increasing O content and the disappearance of the ZnTe emission verify the O-induced conduction band anticrossing effect. The incorporation of O generates electron localization below the E{sub ?} conduction subband tail, which provide additional optical transitions and cause complex recombination mechanisms. Photoexcited free electrons in both the E{sub +} and the E{sub ?} conduction subbands favor rapid relaxation to low energy states. Additionally, temperature-independent long carrier lifetimes (>130.0?ns) that are induced by localized electrons increase with O concentration.

Lin, Yan-Cheng, E-mail: bryanlin@mail.nctu.edu.tw, E-mail: wuchingchou@mail.nctu.edu.tw; Tasi, Ming-Jui; Chou, Wu-Ching, E-mail: bryanlin@mail.nctu.edu.tw, E-mail: wuchingchou@mail.nctu.edu.tw; Chang, Wen-Hao; Chen, Wei-Kuo [Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)] [Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Tanaka, Tooru [Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502 (Japan) [Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502 (Japan); PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012 (Japan); Guo, Qixin [Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502 (Japan)] [Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502 (Japan); Nishio, Mitsuhiro [Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502 (Japan)] [Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502 (Japan)

2013-12-23T23:59:59.000Z

368

Measurement of the underlying event activity at the LHC with $ \\sqrt {s} = 7 $ TeV and comparison with $ \\sqrt {s} = 0.9 $ TeV  

SciTech Connect (OSTI)

A measurement of the underlying activity in scattering processes with a hard scale in the several GeV region is performed in proton-proton collisions at sqrt(s) = 0.9 and 7 TeV, using data collected by the CMS experiment at the LHC. The production of charged particles with pseudorapidity |eta| < 2 and transverse momentum pT > 0.5 GeV/c is studied in the azimuthal region transverse to that of the leading set of charged particles forming a track-jet. A significant growth of the average multiplicity and scalar-pT sum of the particles in the transverse region is observed with increasing pT of the leading track-jet, followed by a much slower rise above a few GeV/c. For track-jet pT larger than a few GeV/c, the activity in the transverse region is approximately doubled with a centre-of-mass energy increase from 0.9 to 7 TeV. Predictions of several QCD-inspired models as implemented in PYTHIA are compared to the data.

Chatrchyan, Serguei; et al.

2011-09-01T23:59:59.000Z

369

Simulations of the LHC high luminosity monitors at beam energies from 3.5 TeV to 7.0 TeV  

SciTech Connect (OSTI)

We have constructed two pairs of fast ionization chambers (BRAN) for measurement and optimization of luminosity at IR1 and IR5 of the LHC. These devices are capable of monitoring the performance of the LHC at low luminosity 10{sup 28} cm{sup -2}s{sup -1} during beam commissioning all the way up to the expected full luminosity of 10{sup 34} cm{sup -2}s{sup -1} at 7.0 TeV. The ionization chambers measure the intensity of hadronic/electromagnetic showers produced by the forward neutral particles of LHC collisions. To predict and improve the understanding of the BRAN performance, we created a detailed FLUKA model of the detector and its surroundings. In this paper, we describe the model and the results of our simulations including the detector's estimated response to pp collisions at beam energies of 3.5, 5.0, and 7.0 TeV per beam. In addition, these simulations show the sensitivity of the BRAN to the crossing angle of the two LHC beams. It is shown that the BRAN sensitivity to the crossing angle is proportional to the measurement of crossing angle by the LHC beam position monitors.

Matis, H.S.; Miyamoto, R.; Humphreys, P.; Ratti, A.; Turner, W.C.; Stiller, J.

2011-03-28T23:59:59.000Z

370

Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing  

SciTech Connect (OSTI)

In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

Albin, D.; del Cueto, J.

2011-03-01T23:59:59.000Z

371

E. P. R. CHARACTERIZATION OF p-TYPE AS GROWN AND Cl-COMPENSATED THM GROWN CdTe  

E-Print Network [OSTI]

band gaps (ZnS, CdS) [1], only scarce observations on lower band-gap materials have been reported is observed in as-grown CdTe, and, even without illumination, a signal at g = 2.003 ± 0.001 appears in heavily-doped. For CdTe, only extrinsic centers induced by doping with transition metal or rare earth ions have been

Boyer, Edmond

372

Search for new particles decaying to diject in 7 TeV proton-proton collisions at CMS  

SciTech Connect (OSTI)

This thesis presents a measurement of the dijet invariant mass spectrum and search for new particles decaying to dijets at CMS in 7 TeV pp collisions using data corresponding to an integrated luminosity of 2.875 pb{sup -1}. The measured dijet mass distribution is compared to QCD prediction from PYTHIA . It is required the pseudorapidity separation of the two jets to satisfy |Dh| < 1.3 with each jet inside the region of |{eta}| < 2.5. The observed dijet mass spectrum is fitted by a smooth function to search for dijet resonances. Since there is no evidence for dijet resonances, the upper limits at 95% Confidence Level (C.L.) on the resonance cross section are set. These generic cross section limits are compared with theoretical predictions for the cross section for several models of new particles: string resonances, axigluons, colorons, excited quarks, E{sub 6} diquarks, Randall-Sundrum gravitons, W' and Z'. It is excluded at 95% C.L. string resonances in the mass range 0.50 < M(S) < 2.50 TeV, excited quarks in the mass range 0.50 < M(q*) < 1.58 TeV, axigluons and colorons in the mass ranges 0.50 < M(A) < 1.17 TeV and 1.47 < M(A) < 1.52 TeV, and E{sub 6} diquarks in the mass ranges 0.50 < M(D) < 0.58 TeV, 0.97 < M(D) < 1.08 TeV, and 1.45 < M(D) < 1.60 TeV. These exclusions extend previously published limits on all models.

Ozturk, Sertac; /Cukurova U.

2011-03-01T23:59:59.000Z

373

Religio e TeRRiTRio no BRasil: 1991/2010  

E-Print Network [OSTI]

Religião e TeRRiTóRio no BRasil: 1991/2010 Cesar Romero Jacob Dora Rodrigues Hees Philippe Waniez. Jacob, Cesar Romero Religião e território no Brasil [recurso eletrônico] : 1991/2010 / Cesar Romero.) ; 21 cm Inclui bibliografia ISBN 978-85-8006-100-0 1. Religiões - Indicadores - Brasil. 2. Indicadores

374

Electron scattering by acceptor centers in p-Ag{sub 2}Te at low temperatures  

SciTech Connect (OSTI)

Resonant electron scattering in p-Ag{sub 2}Te at acceptor concentrations N{sub a} < 4.2 x 10{sup 16} cm{sup -3} has been observed in the temperature range of 50-80 K. The contribution of the resonant scattering to the temperature dependences of the conductivity {sigma}(T) and thermopower {alpha}{sub 0}(T) has been calculated. It is shown that this contribution exceeds that of charge carrier scattering by acoustic phonons.

Aliev, F. F., E-mail: farzali@physics.ab.az; Jafarov, M. B.; Askerova, G. Z. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan); Gojaev, E. M. [Azerbaijan Technical University (Azerbaijan)

2010-08-15T23:59:59.000Z

375

Ab initio calculations of structural and electronic properties of CdTe clusters  

Science Journals Connector (OSTI)

We present results of a study on small stoichiometric CdnTen (1?n?6) clusters and a few nonstoichiometric CdmTen [(m,n=1,4,13,16,19); (m?n)] clusters using the density functional formalism and projector augmented wave method within the generalized gradient approximation. Structural properties viz. geometry, bond length, symmetry, and electronic properties such as the highest occupied molecular orbital (HUMO) and lowest unoccupied molecular orbital (LUMO) gap, binding energy, ionization potential, nature of bonding, etc., have been analyzed. The initial geometries of nonstoichiometric clusters were considered as fragments of the bulk with Td symmetry. It was observed that upon relaxation, the symmetry changes for the Cd-rich clusters whereas the Te-rich clusters retain their symmetry. It may be mentioned that the Te p lone pair repulsion drives the Te atoms to the surface and renders stability to the clusters. The Cd-rich clusters develop a HOMO-LUMO gap due to relaxation whereas there is no considerable change in the HOMO-LUMO gap of the Te-rich clusters. Thus, the symmetry of a cluster seems to be an important factor in determining the HOMO-LUMO gap. To render the surface of a quantum dot inert, passivation is essential. In the present work, we have passivated the nonstoichiometric clusters using fictitious “hydrogen like” pseudoatoms. It was observed that passivation removed the states in the HOMO-LUMO gap region resulting in widening of the gap. The symmetry of the clusters, however, remains unchanged upon passivation.

Somesh Kr. Bhattacharya and Anjali Kshirsagar

2007-01-02T23:59:59.000Z

376

Les Houches 2013: Physics at TeV Colliders: New Physics Working Group Report  

E-Print Network [OSTI]

We present the activities of the "New Physics" working group for the "Physics at TeV Colliders" workshop (Les Houches, France, 3--21 June, 2013). Our report includes new computational tool developments, studies of the implications of the Higgs boson discovery on new physics, important signatures for searches for natural new physics at the LHC, new studies of flavour aspects of new physics, and assessments of the interplay between direct dark matter searches and the LHC.

Brooijmans, G; Fuks, B; Moortgat, F; Richardson, P; Sekmen, S; Weiler, A; Alloul, A; Arbey, A; Baglio, J; Barducci, D; Barr, A J; Basso, L; Battaglia, M; Bélanger, G; Belyaev, A; Bernon, J; Bharucha, A; Bondu, O; Boudjema, F; Boos, E; Buchkremer, M; Bunichev, V; Cacciapaglia, G; Chalons, G; Conte, E; Dolan, M J; Deandrea, A; De Causmaecker, K; Djouadi, A; Dumont, B; Ellis, J; Englert, C; Falkowski, A; Fichet, S; Flacke, T; Gaz, A; Ghezzi, M; Godbole, R; Goudelis, A; Gouzevitch, M; Greco, D; Grober, R; Grojean, C; Guadagnoli, D; Gunion, J F; Herrmann, B; Kalinowski, J; Kim, J H; Kraml, S; Krauss, M E; Kulkarni, S; Lee, S J; Lim, S H; Liu, D; Mahmoudi, F; Maravin, Y; Massironi, A; Mitzka, L; Mohan, K; Moreau, G; Mühlleitner, M M; Nhung, D T; O'Leary, B; Oliveira, A; Panizzi, L; Pappadopulo, D; Pataraia, S; Porod, W; Pukhov, A; Riva, F; Rojo, J; Rosenfeld, R; Ruiz-Álvarez, J; Rzehak, H; Sanz, V; Sengupta, D; Spannowsky, M; Spira, M; Streicher, J; Strobbe, N; Thamm, A; Thomas, M; Torre, R; Waltenberger, W; Walz, K; Wilcock, A; Wulzer, A; Würthwein, F; Wymant, C

2014-01-01T23:59:59.000Z

377

First Results from a Search for TeV Emission from BL Lacs  

E-Print Network [OSTI]

Two active galactic nuclei have been detected at TeV energies using the atmospheric Cherenkov imaging technique. The Whipple Observatory gamma-ray telescope has been used to observe all the BL Lacertae objects in the northern hemisphere out to a redshift of 0.1. We report the tentative detection of VHE emission from a third BL Lac object, 1ES 2344+514. Progress in extending this survey out to z=0.2 will also be reported.

M. Catanese; P. J. Boyle; J. H. Buckley; A. M. Burdett; J. Bussons Gordo; D. A. Carter-Lewis; M. F. Cawley; D. J. Fegan; J. P. Finley; J. A. Gaidos; A. M. Hillas; F. Krennrich; R. C. Lamb; R. W. Lessard; C. Masterson; J. E. McEnery; G. Mohanty; J. Quinn; A. J. Rodgers; H. J. Rose; F. W. Samuelson; G. H. Sembroski; R. Srinivasan; T. C. Weekes; J. Zweerink

1997-06-13T23:59:59.000Z

378

Point Defects in CdZnTe Crystals Grown by Different Techniques  

SciTech Connect (OSTI)

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects in CdZnTe detectors grown by different techniques. We identified 12 different traps with energy levels from 7 meV to 1.1 eV. Although the levels of most of the identified defects were independent of the crystal growth techniques, nevertheless there were some associated differences in the traps energies and densities.

R Gul; A Bolotnikov; H Kim; R Rodriguez; K Keeter; Z Li; G Gu; R James

2011-12-31T23:59:59.000Z

379

Point Defects in CdZnTe Crystals Grown by Different Techniques  

SciTech Connect (OSTI)

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects in CdZnTe detectors grown by different techniques. We identified 12 different traps with energy levels from 7 meV to 1.1 eV. Although the levels of most of the identified defects were independent of the crystal growth techniques, nevertheless there were some associated differences in the traps energies and densities.

Gul, R.; Bolotnikov, A.; Kim, H.K.; Rodriguez, R.; Keeter, K.; Li, Z.; Gu, G.; and James, R.B.

2011-02-02T23:59:59.000Z

380

ATLAS Sensitivity to Left-Right Symmetry at 7 TeV Kirill Skovpen  

E-Print Network [OSTI]

ATLAS Sensitivity to Left-Right Symmetry at 7 TeV Kirill Skovpen 13th ISTC SAC Seminar "New of Nuclear Physics (BINP) on behalf of the LRSM analysis group of ATLAS Exotics/Lepton+X: #12;Messengers;ATLAS detector layout 8Kirill Skovpen - ISTC SAC Seminar 20102010-09-03 #12;¯Q ¯Q q q WR e, µ e, µ Nl W

Note: This page contains sample records for the topic "te rm te" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Thermographic analyses of the growth of Cd1-xZnxTe single crystals  

SciTech Connect (OSTI)

Bulk Cd1-xZnxTe (0

Kopach, O.V.; Bolotnikov, A.; Shcherbak, Larysa P.; Fochuk, Petro M.; and James, Ralph B.

2010-08-01T23:59:59.000Z

382

Electroweak 2 -> 2 amplitudes for electron-positron annihilation at TeV energies  

E-Print Network [OSTI]

The non-radiative scattering amplitudes for electron-positron annihilation into quark and lepton pairs in the TeV energy range are calculated in the double-logarithmic approximation. The expressions for the amplitudes are obtained using infrared evolution equations with different cut-offs for virtual photons and for W and Z bosons, and compared with previous results obtained with an universal cut-off.

A. Barroso; B. I. Ermolaev; M. Greco; S. M. Oliveira; S. I. Troyan

2003-11-26T23:59:59.000Z

383

Conductivity anisotropy in the doped Bi{sub 2}Te{sub 3} single crystals  

SciTech Connect (OSTI)

Temperature dependences (temperature range T = 0.5-300 K) of resistivity in the plane of layers and in the direction perpendicular to the layers, and the galvanomagnetic effects in undoped and doped Bi{sub 2}Te{sub 3} single crystals are studied (magnetic field H < 80 kOe, T = 0.5-4.2 K). It is shown that upon doping of Bi{sub 2}Te{sub 3} with the Group III atoms (In and B), conductivity anisotropy increases mainly due to an increase in resistivity in the direction perpendicular to the layers. This fact makes it possible to assume that the atoms of these impurities are incorporated mainly into the van der Waal gaps between the layers upon doping. It is also revealed that, upon doping of Bi{sub 2}Te{sub 3} with In and B, the temperature dependence of conductivity becomes weaker, which indicates an increase in the role of scattering by defects in scattering mechanisms. The concentrations and mobilities of charge carriers, values of the Hall factor conditioned by the anisotropy of effective masses and orientation of ellipsoids with respect to crystallographic axes, areas of the extreme section of the Fermi surface by the plane perpendicular to the direction of the magnetic field, and the Fermi energy are evaluated.

Abdullaev, N. A., E-mail: anadir@azintex.com; Kakhramanov, S. Sh.; Kerimova, T. G.; Mustafayeva, K. M. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan); Nemov, S. A. [St. Petersburg State Polytechnical University (Russian Federation)

2009-02-15T23:59:59.000Z

384

Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint  

SciTech Connect (OSTI)

We report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. In CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.

Ullal, H. S.; von Roedern, B.

2007-09-01T23:59:59.000Z

385

Doping profiles in CdTe/CdS thin film solar cells  

Science Journals Connector (OSTI)

CdS/CdTe thin film solar cells showing comparable properties as commercial cells have been prepared by close space sublimation (CSS) in our own laboratory. We characterised the cells by capacitance–voltage profiling (C–V), thermal admittance spectroscopy (TAS), and thermally stimulated capacitance measurements (TSCAP). The doping profiles of the CdTe layer obtained by C–V measurements confirm the well known rise in dopant concentration with increasing depth if the usual evaluation procedure is employed. However, the TAS and TSCAP measurements reveal deep acceptors in the CdTe layer with a large concentration exceeding that of the shallow dopants. Under these conditions, C–V measurements are shown to yield an apparently rising dopant concentration even for homogeneous doping. A combined simulation of doping profiles measured at different temperatures using a fixed and uniform shallow and deep doping fits well to measured doping concentration. These results indicate how to get reliable information on the shallow dopant concentration.

U. Reislöhner; M. Hädrich; N. Lorenz; H. Metzner; W. Witthuhn

2007-01-01T23:59:59.000Z

386

Atomistic simulation of CdTe solid-liquid coexistence equilibria  

SciTech Connect (OSTI)

Atomistic simulations of CdTe using a Stillinger-Weber (S-W) interatomic potential were undertaken to model the solid-liquid phase equilibria of this important compound semiconductor. Although this potential has been used by others to study liquid CdTe and vapor-liquid interface, it is based on fitting parameters optimized only for the zincblende solid. It has not been fully explored as a potential for solid-liquid phase equilibria until this work. This research reports an accurate determination of the melting temperature, TM=1305K near P=0, the heat of fusion at melting and as a function of temperature up to 1700K, and on the relative phase densities with a particular emphasis on the melting line. The S-W potential for CdTe predicts a liquid with a density slightly less than that of the solid and, hence, the pressure-temperature melting line has a positive slope. The pair correlation structure of the liquid is determined and favorably compared to neutron scattering data. The liquid-solid interface is discussed using density profiles and a short-range order parameter for models having principal orientations along <100>, <110>, and <111> crystallographic directions.

Henager, Charles H.; Morris, James R.

2009-12-07T23:59:59.000Z

387

Investigation of Cd1-XMgxTe Alloys for Tandem Solar Cell Applications: Preprint  

SciTech Connect (OSTI)

Theoretical modeling of two-junction tandem solar cells shows that for optimal device performance, the bandgap of the top cell should be in the range of 1.6 to 1.8 eV. Cd1-xMgxTe (CMT) alloys have a lattice constant close to that of CdTe, and the addition of a small amount of Mg changes the bandgap considerably. In this paper, we present our work on developing CMT for solar cell applications. CMT films were prepared by vacuum deposition with co-evaporation of CdTe and Mg on substrates heated to 300-400 C. Films with a composition in the range of x = 0 to 0.66 were fabricated, and optical analysis of the films showed that the bandgap of the samples ranged from 1.5 to 2.3 eV and varied linearly with composition. For the fabrication of devices using these alloy films, we also investigated the effect of post-deposition CdCl2 heat treatment. We have investigated junctions between CdS and CMT alloys in the bandgap range of 1.5 to 1.8 eV for tandem cell applications. We have also worked on the ohmic contacts to the CMT alloy films using Cu/Au bilayers, and the preliminary data shows a significant effect of the contact processing on the device performance.

Dhere, R.; Ramanathan, K.; Scharf, J.; Moutinho, H.; To, B.; Duda, A.; Noufi, R.

2006-05-01T23:59:59.000Z

388

On the formation of TeV radiation in LS 5039  

E-Print Network [OSTI]

The recent detections of TeV gamma-rays from compact binary systems show that relativistic outflows (jets or winds) are sites of effective acceleration of particles up to multi-TeV energies. In this paper, we discuss the conditions of acceleration and radiation of ultra-relativistic electrons in LS 5039, the gamma-ray emitting binary system for which the highest quality TeV data are available. Assuming that the gamma-ray emitter is a jet-like structure, we performed detailed numerical calculations of the energy spectrum and lightcurves accounting for the acceleration efficiency, the location of the accelerator, the speed of the emitting flow, the inclination angle of the system, as well as specific features related to anisotropic inverse Compton scattering and pair production. We conclude that the accelerator should not be deep inside the binary system unless we assume a very efficient acceleration rate. We show that within the IC scenario both the gamma-ray spectrum and flux are strongly orbital phase dependent. Formally, our model can reproduce, for specific sets of parameter values, the energy spectrum of gamma-rays reported by HESS for wide orbital phase intervals. However, the physical properties of the source can be constrained only by observations capable of providing detailed energy spectra for narrow orbital phase intervals ($\\Delta\\phi\\ll 0.1$).

Dmitry Khangulyan; Felix Aharonian; Valenti Bosch-Ramon

2007-07-11T23:59:59.000Z

389

On the formation of TeV radiation in LS 5039  

E-Print Network [OSTI]

The recent detections of TeV gamma-rays from compact binary systems show that relativistic outflows (jets or winds) are sites of effective acceleration of particles up to multi-TeV energies. In this paper, we discuss the conditions of acceleration and radiation of ultra-relativistic electrons in LS 5039, currently the binary system emitting gamma-rays with the highest quality data in the TeV range. Assuming that the gamma-ray emitter is a jet-like structure, we performed detailed numerical calculations of the energy spectrum and lightcurves accounting for the acceleration efficiency, the location of the accelerator, the speed of the emitting flow, the inclination angle of the system, as well as specific features related to anisotropic inverse Compton scattering and pair production. We conclude that the accelerator should not be deep inside the binary system unless we assume a very efficient acceleration rate. We show that within the IC scenario both the gamma-ray spectrum and flux are strongly orbital phase d...

Khangulyan, Dmitry; Bosch-Ramon, Valenti

2007-01-01T23:59:59.000Z

390

High energy resolution hard X-ray and gamma-ray imagers using CdTe diode devices  

E-Print Network [OSTI]

We developed CdTe double-sided strip detectors (DSDs or cross strip detectors) and evaluated their spectral and imaging performance for hard X-rays and gamma-rays. Though the double-sided strip configuration is suitable for imagers with a fine position resolution and a large detection area, CdTe diode DSDs with indium (In) anodes have yet to be realized due to the difficulty posed by the segmented In anodes. CdTe diode devices with aluminum (Al) anodes were recently established, followed by a CdTe device in which the Al anodes could be segmented into strips. We developed CdTe double-sided strip devices having Pt cathode strips and Al anode strips, and assembled prototype CdTe DSDs. These prototypes have a strip pitch of 400 micrometer. Signals from the strips are processed with analog ASICs (application specific integrated circuits). We have successfully performed gamma-ray imaging spectroscopy with a position resolution of 400 micrometer. Energy resolution of 1.8 keV (FWHM: full width at half maximum) was ob...

Watanabe, Shin; Aono, Hiroyuki; Takeda, Shin'ichiro; Odaka, Hirokazu; Kokubun, Motohide; Takahashi, Tadayuki; Nakazawa, Kazuhiro; Tajima, Hiroyasu; Onishi, Mitsunobu; Kuroda, Yoshikatsu

2008-01-01T23:59:59.000Z

391

Dependence of the efficiency of a CdS/CdTe solar cell on the absorbing layer's thickness  

SciTech Connect (OSTI)

On the basis of the continuity equation, the spatial distribution of photogenerated excess electrons in the neutral region of the CdTe layer in a CdS/CdTe heterostructure is analyzed taking into account recombination at the rear surface of the layer. It is demonstrated that, owing to diffusion, excess electrons penetrate deep into the CdTe layer at distances far exceeding the effective penetration length for solar radiation. Calculations of the short-circuit current indicate that, for electron lifetimes of 10{sup -10}-10{sup -9} s, typical of thin-film CdS/CdTe solar cells, recombination losses are insignificant if the CdTe layer's thickness amounts to 3-4 {mu}m but increase dramatically if the thickness is below 1-1.5 {mu}m. In order to eliminate recombination losses in more efficient solar cells where the electron lifetime is {>=}10{sup -8} s the absorbing CdTe layer needs to be much thicker.

Kosyachenko, L. A., E-mail: lakos@chv.ukrpack.net; Savchuk, A. I.; Grushko, E. V. [Chernivtsi National University (Ukraine)

2009-08-15T23:59:59.000Z

392

Thermal treatment induced change of diluted oxygen doped ZnTe films grown by metal-organic chemical vapor deposition  

Science Journals Connector (OSTI)

In this paper the authors report the growth of diluted oxygen doped ZnTe films (ZnTe:O) by metal-organic chemical vapor deposition (MOCVD). The effect of a post thermal annealing on the properties of the highly mismatched films has been investigated. It is found that the in-situ doping leads to an effective incorporation of oxygen into ZnTe films with different occupation configurations either on Zn or on Te site. The subsequent annealing process in a vacuum ambient leads to an enhancement of the oxygen incorporation into the ZnTe:O films due to the diffusion of the residual oxygen while the annealing with the same as-grown sample covered on top of the surface (denoted as “face-to-face” annealing in the text) is beneficial to the improvement of the film quality with manifest intermediate band emission at around 1.9?eV as revealed by the low-temperature photoluminescence. This study indicates that the mass-productive MOCVD technique may be suitable for the growth of highly mismatched ZnTe:O films for the application of the intermediate band solar cell.

2014-01-01T23:59:59.000Z

393

Development of high-efficiency, thin-film CdTe solar cells. Final subcontract report, 1 February 1992--30 November 1995  

SciTech Connect (OSTI)

This report describes work performed by the Georgia Institute of Technology (GIT) to bring the polycrystalline CdTe cell efficiency a step closer to the practically achievable efficiency of 18% through fundamental understanding of detects and loss mechanisms, the role of chemical and heat treatments, and investigation of now process techniques. The objective was addressed by a combination of in-depth characterization, modeling, materials growth, device fabrication, and `transport analyses of Au/Cu/CdTe/CdS/SnO {sub 2} glass front-wall heterojunction solar cells. GiT attempted to understand the loss mechanism(s) in each layer and interface by a step-by-step investigation of this multilayer cell structure. The first step was to understand, quantify, and reduce the reflectance and photocurrent loss in polycrystalline CdTe solar calls. The second step involved the investigation of detects and loss mechanisms associated with the CdTe layer and the CdTe/CdS interface. The third stop was to investigate the effect of chemical and heat treatments on CdTe films and cells. The fourth step was to achieve a better and reliable contact to CdTe solar cells by improving the fundamental understanding. Of the effects of Cu on cell efficiency. Finally, the research involved the investigation of the effect of crystallinity and grain boundaries on Cu incorporation in the CdTe films, including the fabrication of CdTe solar calls with larger CdTe grain size.

Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Inst. of Tech., Atlanta, GA (United States)

1996-01-01T23:59:59.000Z

394

ZnO/Sn:In2O3 and ZnO/CdTe band offsets for extremely thin absorber photovoltaics  

SciTech Connect (OSTI)

Band alignments were measured by x-ray photoelectron spectroscopy for thin films of ZnO on polycrystalline Sn:In2O3 (ITO) and single crystal CdTe. Hybrid density functional theory calculations of epitaxial zinc blende ZnO(001) on CdTe(001) were performed to compare with experiment. A conduction band offset of -0.6 eV was measured for ZnO/ITO, which is larger than desired for efficient electron injection. For ZnO/CdTe, the experimental conduction band offset of 0.25 eV is smaller than the calculated value of 0.67 eV, likely due to the TeOx layer at the ZnO/CdTe interface. The measured conduction band offset for ZnO/CdTe is favorable for photovoltaic devices.

Kaspar, Tiffany C.; Droubay, Timothy C.; Jaffe, John E.

2011-12-28T23:59:59.000Z

395

Charged-particle multiplicity measurement in proton-proton collisions at sqrt(s) = 7 TeV with ALICE at LHC  

E-Print Network [OSTI]

The pseudorapidity density and multiplicity distribution of charged particles produced in proton-proton collisions at the LHC, at a centre-of-mass energy sqrt(s) = 7 TeV, were measured in the central pseudorapidity region |eta| < 1. Comparisons are made with previous measurements at sqrt(s) = 0.9 TeV and 2.36 TeV. At sqrt(s) = 7 TeV, for events with at least one charged particle in |eta| < 1, we obtain dNch/deta = 6.01 +- 0.01 (stat.) +0.20 -0.12 (syst.). This corresponds to an increase of 57.6% +- 0.4% (stat.) +3.6 -1.8% (syst.) relative to collisions at 0.9 TeV, significantly higher than calculations from commonly used models. The multiplicity distribution at 7 TeV is described fairly well by the negative binomial distribution.

K. Aamodt; N. Abel; U. Abeysekara; A. Abrahantes Quintana; A. Abramyan; D. Adamova; M. M. Aggarwal; G. Aglieri Rinella; A. G. Agocs; S. Aguilar Salazar; Z. Ahammed; A. Ahmad; N. Ahmad; S. U. Ahn; R. Akimoto; A. Akindinov; D. Aleksandrov; B. Alessandro; R. Alfaro Molina; A. Alici; E. Almaraz Avina; J. Alme; T. Alt; V. Altini; S. Altinpinar; C. Andrei; A. Andronic; G. Anelli; V. Angelov; C. Anson; T. Anticic; F. Antinori; S. Antinori; K. Antipin; D. Antonczyk; P. Antonioli; A. Anzo; L. Aphecetche; H. Appelshauser; S. Arcelli; R. Arceo; A. Arend; N. Armesto; R. Arnaldi; T. Aronsson; I. C. Arsene; A. Asryan; A. Augustinus; R. Averbeck; T. C. Awes; J. Aysto; M. D. Azmi; S. Bablok; M. Bach; A. Badala; Y. W. Baek; S. Bagnasco; R. Bailhache; R. Bala; A. Baldisseri; A. Baldit; J. Ban; R. Barbera; G. G. Barnafoldi; L. Barnby; V. Barret; J. Bartke; F. Barile; M. Basile; V. Basmanov; N. Bastid; B. Bathen; G. Batigne; B. Batyunya; C. Baumann; I. G. Bearden; B. Becker; I. Belikov; R. Bellwied; E. Belmont-Moreno; A. Belogianni; L. Benhabib; S. Beole; I. Berceanu; A. Bercuci; E. Berdermann; Y. Berdnikov; L. Betev; A. Bhasin; A. K. Bhati; L. Bianchi; N. Bianchi; C. Bianchin; J. Bielcik; J. Bielcikova; A. Bilandzic; L. Bimbot; E. Biolcati; A. Blanc; F. Blanco; F. Blanco; D. Blau; C. Blume; M. Boccioli; N. Bock; A. Bogdanov; H. Boggild; M. Bogolyubsky; J. Bohm; L. Boldizsar; M. Bombara; C. Bombonati; M. Bondila; H. Borel; V. Borshchov; A. Borisov; C. Bortolin; S. Bose; L. Bosisio; F. Bossu; M. Botje; S. Bottger; G. Bourdaud; B. Boyer; M. Braun; P. Braun-Munzinger; L. Bravina; M. Bregant; T. Breitner; G. Bruckner; R. Brun; E. Bruna; G. E. Bruno; D. Budnikov; H. Buesching; P. Buncic; O. Busch; Z. Buthelezi; D. Caffarri; X. Cai; H. Caines; E. Camacho; P. Camerini; M. Campbell; V. Canoa Roman; G. P. Capitani; G. Cara Romeo; F. Carena; W. Carena; F. Carminati; A. Casanova Diaz; M. Caselle; J. Castillo Castellanos; J. F. Castillo Hernandez; V. Catanescu; E. Cattaruzza; C. Cavicchioli; P. Cerello; V. Chambert; B. Chang; S. Chapeland; A. Charpy; J. L. Charvet; S. Chattopadhyay; S. Chattopadhyay; M. Cherney; C. Cheshkov; B. Cheynis; E. Chiavassa; V. Chibante Barroso; D. D. Chinellato; P. Chochula; K. Choi; M. Chojnacki; P. Christakoglou; C. H. Christensen; P. Christiansen; T. Chujo; F. Chuman; C. Cicalo; L. Cifarelli; F. Cindolo; J. Cleymans; O. Cobanoglu; J. -P. Coffin; S. Coli; A. Colla; G. Conesa Balbastre; Z. Conesa del Valle; E. S. Conner; P. Constantin; G. Contin; J. G. Contreras; Y. Corrales Morales; T. M. Cormier; P. Cortese; I. Cortes Maldonado; M. R. Cosentino; F. Costa; M. E. Cotallo; E. Crescio; P. Crochet; E. Cuautle; L. Cunqueiro; J. Cussonneau; A. Dainese; H. H. Dalsgaard; A. Danu; I. Das; S. Das; A. Dash; S. Dash; G. O. V. de Barros; A. De Caro; G. de Cataldo; J. de Cuveland; A. De Falco; M. De Gaspari; J. de Groot; D. De Gruttola; N. De Marco; S. De Pasquale; R. De Remigis; R. de Rooij; G. de Vaux; H. Delagrange; G. Dellacasa; A. Deloff; V. Demanov; E. Denes; A. Deppman; G. D'Erasmo; D. Derkach; A. Devaux; D. Di Bari; C. Di Giglio; S. Di Liberto; A. Di Mauro; P. Di Nezza; M. Dialinas; L. Diaz; R. Diaz; T. Dietel; R. Divia; O. Djuvsland; V. Dobretsov; A. Dobrin; T. Dobrowolski; B. Donigus; I. Dominguez; D. M. M. DonO. Dordic; A. K. Dubey; J. Dubuisson; L. Ducroux; P. Dupieux; A. K. Dutta Majumdar; M. R. Dutta Majumdar; D. Elia; D. Emschermann; A. Enokizono; B. Espagnon; M. Estienne; S. Esumi; D. Evans; S. Evrard; G. Eyyubova; C. W. Fabjan; D. Fabris; J. Faivre; D. Falchieri; A. Fantoni; M. Fasel; O. Fateev; R. Fearick; A. Fedunov; D. Fehlker; V. Fekete; D. Felea; B. Fenton-Olsen; G. Feofilov; A. Fernandez Tellez; E. G. Ferreiro; A. Ferretti; R. Ferretti; M. A. S. Figueredo; S. Filchagin; R. Fini; F. M. Fionda; E. M. Fiore; M. Floris; Z. Fodor; S. Foertsch; P. Foka; S. Fokin; F. Formenti; E. Fragiacomo; M. Fragkiadakis; U. Frankenfeld; A. Frolov; U. Fuchs; F. Furano; C. Furget; M. Fusco Girard; J. J. Gaardhoje; S. Gadrat; M. Gagliardi; A. Gago; M. Gallio; P. Ganoti; M. S. Ganti; C. Garabatos; C. Garcia Trapaga; J. Gebelein; R. Gemme; M. Germain; A. Gheata; M. Gheata; B. Ghidini; P. Ghosh; G. Giraudo; P. Giubellino; E. Gladysz-Dziadus; R. Glasow; P. Glassel; A. Glenn; R. Gomez Jimenez; H. Gonzalez Santos; L. H. Gonzalez-Trueba; P. Gonzalez-Zamora; S. Gorbunov; Y. Gorbunov; S. Gotovac; H. Gottschlag; V. Grabski; R. Grajcarek; A. Grelli; A. Grigoras; C. Grigoras; V. Grigoriev; A. Grigoryan; S. Grigoryan; B. Grinyov; N. Grion; P. Gros; J. F. Grosse-Oetringhaus; J. -Y. Grossiord; R. Grosso; F. Guber; R. Guernane; B. Guerzoni; K. Gulbrandsen; H. Gulkanyan; T. Gunji; A. Gupta; R. Gupta; H. -A. Gustafsson; H. Gutbrod; O. Haaland; C. Hadjidakis; M. Haiduc; H. Hamagaki; G. Hamar; J. Hamblen; B. H. Han; J. W. Harris; M. Hartig; A. Harutyunyan; D. Hasch; D. Hasegan

2010-05-21T23:59:59.000Z

396

HOMOJONCTION CdTe PAR CROISSANCE PITAXIQUE EN PHASE VAPEUR J. MIMILA-ARROYO (*), A. BOUAZZI and G. COHEN-SOLAL  

E-Print Network [OSTI]

423 HOMOJONCTION CdTe PAR CROISSANCE �PITAXIQUE EN PHASE VAPEUR J. MIMILA-ARROYO (*), A. BOUAZZI'un quasi-champ électrique interne. Une partie du programme concerne la croissance épitaxique de CdTe par la de CdTe sont toujours polycristallins et sont orientés par épitaxie. La taille des grains est

Boyer, Edmond

397

STRUCTURE AND PROPERTIES OF SPUTTER-DEPOSITED CdTe W. T. PAWLEWICZ, R. P. ALLEN, H. G. BARRUS and N. LAEGREID  

E-Print Network [OSTI]

417 STRUCTURE AND PROPERTIES OF SPUTTER-DEPOSITED CdTe W. T. PAWLEWICZ, R. P. ALLEN, H. G. BARRUS minces de CdTe d'épaisseur comprise entre 2 et 10 03BCm ont été préparés par pulvérisation cathodique par des résultats peu encourageants. Abstract. 2014 CdTe films were sputter deposited in thicknesses

Paris-Sud XI, Université de

398

JOURNAL DE PHYSIQUE Colloque C6, suppldment au n06, tome 40, juin 1979, page (26-169 PHOTOPLASTIC EFFECT I N CdTe  

E-Print Network [OSTI]

EFFECT I N CdTe E.Y. ~utmanas" and P. ~aasen'" 'Department of Materials Engineering, Techion t du dopage sur les parametres de l ' e f f e t photoplastique (PPE) ont St6 etudieespour l e CdTe. Un modele de l ' e f f e t PPE du CdTe est discut6. Abstract.- The influence o f p l a s t i c deformation

Boyer, Edmond

399

Development of CdS/CdTe Tin Film Devices for St. Gobain Coated Glass: Cooperative Research and Development Final Report, CRADA Number CRD-08-317  

SciTech Connect (OSTI)

Research performed at NREL to produce CdS/CdTe devices on St. Gobain coated-glass material to establish a baseline CdS/CdTe device process and determine baseline device performance parameters on St. Gobain material. Performance of these baseline devices compared to similar devices produced by applying the established baseline CdS/CdTe process on alternative St. Gobain coated-glass materials.

Gessert, T.

2012-04-01T23:59:59.000Z

400

The effect of structural vacancies on the thermoelectric properties of (Cu{sub 2}Te){sub 1?x}(Ga{sub 2}Te{sub 3}){sub x}  

SciTech Connect (OSTI)

We have studied the effects of structural vacancies on the thermoelectric properties of the ternary compounds (Cu{sub 2}Te){sub 1?x}(Ga{sub 2}Te{sub 3}){sub x} (x=0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75), which are solid solutions found in the pseudo-binary phase diagram for Cu{sub 2}Te and Ga{sub 2}Te{sub 3}, and possesses tunable structural vacancy concentrations. This materials system is not suitable due to the cost and scarcity of the constituent elements, but the vacancy behavior is well understood and will provide a valuable test case for other systems more suitable from the standpoint of cost and abundance of raw materials, which also possesses these vacancy features, but whose structural characterization is lacking at this stage. We find that the nominally defect free phase CuGaTe{sub 2} possess the highest ZT (ZT=S{sup 2}T/??, where S is the Seebeck coefficient and ? is the electrical resistivity ? is the thermal conductivity and T is the absolute temperature) which approaches 1 at 840 K and seems to continuously increase above this temperature. This result is due to the unexpectedly low thermal conductivity found for this material at high temperature. The low thermal conductivity was caused by strong Umklapp (thermally resistive scattering processes involving three phonons) phonon scattering. We find that due to the coincidentally strong scattering of carriers by the structural defects that higher concentrations of these features lead to poor electrical transport properties and decreased ZT. - Graphical abstract: Thermal conductivity and zT as a function of temperature for a series of compounds of the type (Cu{sub 2}Te){sub 1-x}(Ga{sub 2}Te{sub 3})x (x=0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75). Highlights: ? All the samples show p-type semiconducting behavior in the temperature dependence of the Seebeck and Hall coefficients. ? The increased carrier concentration and the introduction of vacancies diminish the carrier mobility and power factor. ? The low temperature k decreases significantly as the Ga{sub 2}Te{sub 3} content increases due to increasing point defects. ? The highest ZT ? 1.0 at 840 K among the samples in this study was found in CuGaTe2, which contains no vacancies.

Ye, Zuxin; Young Cho, Jung; Tessema, Misle M. [Optimal Inc., Plymouth Township, MI 48170 (United States); Salvador, James R., E-mail: james.salvador@gm.com [GM Global R and D, Warren, MI 48090 (United States); Waldo, Richard A. [GM Global R and D, Warren, MI 48090 (United States); Wang, Hsin; Cai, Wei [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

2013-05-15T23:59:59.000Z

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401

Transport and mechanical property evaluation of (AgSbTe){sub 1-x}(GeTe){sub x} (x=0.80, 0.82, 0.85, 0.87, 0.90)  

SciTech Connect (OSTI)

(AgSbTe{sub 2}){sub 1-x}(GeTe){sub x} (known collectively by the acronym of their constituent elements as TAGS-x, where x designates the mole fraction of GeTe) materials, despite being described over 40 years ago, have only recently been studied in greater detail from a fundamental standpoint. We have prepared a series of samples with composition (AgSbTe{sub 2}){sub 1-x}(GeTe){sub x} (x=0.80, 0.82, 0.85, 0.87 and 0.90). Cast ingots of the above compositions were ground and consolidated by spark plasma sintering (SPS). Sintering conditions, specifically high applied pressures of 65 MPa and slow heating rates, were identified as important variables that lead to samples with low porosity and good mechanical strength. The resulting ingots were cut for high temperature electrical, thermal transport and mechanical property evaluation. TAGS-85 was found to have the highest ZT of all samples investigated (ZT=1.36 at 700 K) as a result of its very low value of thermal conductivity. Hall effect measurements performed from 5 to 300 K found these materials to have complex multi-band transport characteristics. - Graphical Abstract: Powder X-ray diffraction of TAGS-x (x=0.80, 0.82, 0.85, 0.87 and 0.90) showing characteristic bifurcation indicative of rhombohedral structure.

Salvador, James R., E-mail: james.salvador@gm.c [Materials and Processes Laboratory, GM R and D Center, Warren, MI 48090 (United States); Yang, J. [Materials and Processes Laboratory, GM R and D Center, Warren, MI 48090 (United States); Shi, X. [Optimal, Inc. Plymouth Township, MI 48170 (United States); Wang, H.; Wereszczak, A.A. [High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

2009-08-15T23:59:59.000Z

402

Manufacturing Process Optimization to Improve Stability, Yield and Efficiency of CdS/CdTe PV Devices: Final Report, December 2004 - January 2009  

SciTech Connect (OSTI)

The research by Colorado State University advances the understanding of device stability, efficiency, and process yield for CdTe PV devices.

Sampath, W. S.; Enzenroth, A.; Barth, K.

2009-03-01T23:59:59.000Z

403

Switching of localized surface plasmon resonance of gold nanoparticles on a GeSbTe film mediated by nanoscale phase change and modification of surface morphology  

SciTech Connect (OSTI)

As a platform for active nanophotonics, localized surface plasmon resonance (LSPR) switching via interaction with a chalcogenide phase change material (GeSbTe) was investigated. We performed single-particle spectroscopy of gold nanoparticles placed on a GeSbTe thin film. By irradiation with a femtosecond pulsed laser for amorphization and a continuous wave laser for crystallization, significant switching behavior of the LSPR band due to the interaction of GeSbTe was observed. The switching mechanism was explained in terms of both a change in the refractive index and a modification of surface morphology accompanying volume expansion and reduction of GeSbTe.

Hira, T.; Homma, T.; Uchiyama, T.; Kuwamura, K.; Saiki, T. [Graduate School of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama, Kanagawa 223-8522 (Japan)] [Graduate School of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama, Kanagawa 223-8522 (Japan)

2013-12-09T23:59:59.000Z

404

Multicolor visible light upconversion emission in Tm3+–Er3+ codoped TeO2–PbO glass under near-infrared laser radiation  

Science Journals Connector (OSTI)

The multicolor intense visible emission from Er3+ and Tm3+ ions codoped in TeO2–PbO glass upon excitation at ?1064??nm...

Rai, Vineet Kumar; Mishra, Pankaj

2014-01-01T23:59:59.000Z

405

RAPID TeV GAMMA-RAY FLARING OF BL LACERTAE  

SciTech Connect (OSTI)

We report on the detection of a very rapid TeV gamma-ray flare from BL Lacertae on 2011 June 28 with the Very Energetic Radiation Imaging Telescope Array System (VERITAS). The flaring activity was observed during a 34.6 minute exposure, when the integral flux above 200 GeV reached (3.4 {+-} 0.6) Multiplication-Sign 10{sup -6} photons m{sup -2} s{sup -1}, roughly 125% of the Crab Nebula flux measured by VERITAS. The light curve indicates that the observations missed the rising phase of the flare but covered a significant portion of the decaying phase. The exponential decay time was determined to be 13 {+-} 4 minutes, making it one of the most rapid gamma-ray flares seen from a TeV blazar. The gamma-ray spectrum of BL Lacertae during the flare was soft, with a photon index of 3.6 {+-} 0.4, which is in agreement with the measurement made previously by MAGIC in a lower flaring state. Contemporaneous radio observations of the source with the Very Long Baseline Array revealed the emergence of a new, superluminal component from the core around the time of the TeV gamma-ray flare, accompanied by changes in the optical polarization angle. Changes in flux also appear to have occurred at optical, UV, and GeV gamma-ray wavelengths at the time of the flare, although they are difficult to quantify precisely due to sparse coverage. A strong flare was seen at radio wavelengths roughly four months later, which might be related to the gamma-ray flaring activities. We discuss the implications of these multiwavelength results.

Arlen, T. [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States)] [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States); Aune, T.; Bouvier, A. [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States)] [Santa Cruz Institute for Particle Physics and Department of Physics, University of California, Santa Cruz, CA 95064 (United States); Beilicke, M.; Buckley, J. H.; Bugaev, V.; Dickherber, R. [Department of Physics, Washington University, St. Louis, MO 63130 (United States)] [Department of Physics, Washington University, St. Louis, MO 63130 (United States); Benbow, W. [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States)] [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States); Cesarini, A.; Connolly, M. P. [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland)] [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland); Ciupik, L. [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States)] [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States); Cui, W.; Feng, Q.; Finley, J. P. [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States)] [Department of Physics, Purdue University, West Lafayette, IN 47907 (United States); Dumm, J.; Fortson, L. [School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455 (United States)] [School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455 (United States); Errando, M. [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States)] [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States); Falcone, A. [Department of Astronomy and Astrophysics, 525 Davey Lab, Pennsylvania State University, University Park, PA 16802 (United States)] [Department of Astronomy and Astrophysics, 525 Davey Lab, Pennsylvania State University, University Park, PA 16802 (United States); Federici, S. [DESY, Platanenallee 6, D-15738 Zeuthen (Germany)] [DESY, Platanenallee 6, D-15738 Zeuthen (Germany); Finnegan, G., E-mail: qfeng@purdue.edu, E-mail: cui@purdue.edu [Department of Physics and Astronomy, University of Utah, Salt Lake City, UT 84112 (United States); Collaboration: VERITAS Collaboration; and others

2013-01-10T23:59:59.000Z

406

Energy spectrum of charge carriers in Ag{sub 2}Te  

SciTech Connect (OSTI)

Conductivity {sigma}(T) and Hall constant R(B, T) are studied for Ag{sub 2}Te with excess 0.1% of Te. The change in the R sign from (-) to (+) is found in dependences R(B) at various temperatures. In the temperature dependences of R in a range of 1-3 kG, two extrema are found, namely, minimum at T {approx} 60 and maximum at T {approx} 80 K, and at B {>=} 5 kG, the double change in sign of R from (-) to (+) and from (+) to (-) is found. Temperatures of sign inversion for R depend on the magnetic field. At B = 15 kG, the sign of R varies from (-) to (+) at T {approx} 38 K, and from (+) to (-) at T {approx} 70 K. It is found approximately in the region of the change in the sign of R(T), the concentration n(T) and electrical conductivity pass through the minimum. It is established that the minima of n(T) and {sigma}(T), extrema in R(T), and sign inversion for R(T) from (-) to (+) as well as the overestimated temperature dependence n{infinity}T{sup 4} are caused by localization of conduction electrons at acceptor levels entering the conduction band of Ag{sub 2}Te. The values of parameters of electrons (n, {mu}{sub n}) and holes (p, {mu}{sub p}) at the points of the change in the sign of R(T) from (-) to (+) and from (+) to (-) are determined.

Aliyev, S. A.; Agayev, Z. F., E-mail: agayevz@rambler.ru; Selimzadeh, R. I. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2008-12-15T23:59:59.000Z

407

Space charge limited current conduction in Bi{sub 2}Te{sub 3} thin films  

SciTech Connect (OSTI)

Bi{sub 2}Te{sub 3} is known for its large thermoelectric coefficients and is widely used as a material for Peltier devices. Bi{sub 2}Te{sub 3} thin films with thicknesses in the range 125-300 A have been prepared by Flash Evaporation at a pressure of 10{sup -5} m bar on clean glass substrates at room temperature. An Al-Bi{sub 2}Te{sub 3}-Al sandwich structure has been used for electrical conduction properties in the temperature range 303 to 483 K. I-V characteristics showed Ohmic conduction in the low voltage region. In the higher voltage region, a Space Charge Limited Conduction (SCLC) takes place due to the presence of the trapping level. The transition voltage (V{sub t}), between the Ohmic and the SCLC condition was proportional to the square of thickness. Further evidence for this conduction process was provided by the linear dependence of V {sub t} on t {sup 2} and log J on log t. The hole concentration in the films were found to be n {sub 0} = 1.65 * 10{sup 10} m{sup -3}. The carrier mobility increases with increasing temperature whereas the density of trapped charges decreases with increasing temperature. The barrier height decreases with an increase in temperature. The increase in the trapping concentration V {sub t} is correlated with ascending the degree of preferred orientation of the highest atomic density plane. The activation energy was estimated and the values found to decrease with increasing applied voltage. The zero field value of the activation energy is found to be 0.4 eV.

Sathyamoorthy, R. [PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore-029, Tamil Nadu (India)]. E-mail: rsathya_59@yahoo.com; Dheepa, J. [PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore-029, Tamil Nadu (India); Velumani, S. [Department of Physics, ITESM-Campus, Monterrey, N.L (Mexico)

2007-08-15T23:59:59.000Z

408

Discovery of TeV gamma-ray emission from the Pulsar Wind Nebula 3C 58 by MAGIC  

E-Print Network [OSTI]

The Pulsar Wind Nebula (PWN) 3C 58 is energized by one of the highest spin-down power pulsars known (5% of Crab pulsar) and it has been compared to the Crab Nebula due to their morphological similarities. This object was detected by Fermi-LAT with a spectrum extending beyond 100 GeV. We analyzed 81 hours of 3C 58 data taken with the MAGIC telescopes and we detected VHE gamma-ray emission for the first time at TeV energies with a significance of 5.7 sigma and an integral flux of 0.65% C.U. above 1 TeV. The differential energy spectrum between 400 GeV and 10 TeV is well described by a power-law function $d\\Phi/dE=f_{o}(E/1TeV)^{-\\Gamma}$ with $f_{o}=(2.0\\pm0.4stat\\pm0.6sys) 10^{-13}cm^{-2}s^{-1}TeV^{-1}$ and $\\Gamma=2.4\\pm0.2sta\\pm0.2sys$. This leads 3C 58 to be the least luminous PWN ever detected at VHE and the one with the lowest flux at VHE to date. According to time-dependent models in which electrons up-scatter photon fields, the best representation favors a distance to the PWN of 2 kpc and FIR comparable...

Bigas, O Blanch; Carmona, E; Pérez-Torres, M A

2015-01-01T23:59:59.000Z

409

Neutrinos from the Galactic Center in the Light of its Gamma-Ray Detection at TeV Energy  

E-Print Network [OSTI]

We re-evaluate the event rate expected in km^3-scale detectors for neutrinos from the direction of the Galactic Center (GC) in light of recent spectral measurements obtained by the HESS instrument for ~TeV gamma-radiation from this direction. In the most plausible scenario the re-evaluated event rate is smaller than that previously calculated--and here re-calculated--on the basis of EGRET data. However, the GC TeV gamma-ray detections by the Whipple, CANGAROO, and HESS instruments, together with the strong indications for an overabundance of cosmic rays coming from the GC at EeV energies, strengthen the expectation for a detectable, TeV-PeV GC neutrino signal from proton-proton interactions in that region. If the TeV gamma-ray--EeV cosmic ray anisotropy connection is correct, this signal will be detectable within a year and half for km^3-scale neutrino detectors in the Northern Hemisphere at super-TeV energies and, significantly, should also be detectable in 1.6 years by the South Polar IceCube detector at energies > 10^14 eV. The GC neutrino signal should also produce a detectable signal from neutrino showering and resonant W^- production by anti-electron-neutrinos in the volume of a km^3-scale detector.

Roland M. Crocker; Fulvio Melia; Raymond R. Volkas

2005-02-10T23:59:59.000Z

410

Phase change behaviors of Zn-doped Ge{sub 2}Sb{sub 2}Te{sub 5} films  

SciTech Connect (OSTI)

Zn-doped Ge{sub 2}Sb{sub 2}Te{sub 5} phase-change materials have been investigated for phase change memory applications. Zn{sub 15.16}(Ge{sub 2}Sb{sub 2}Te{sub 5}){sub 84.84} phase change film exhibits a higher crystallization temperature ({approx}258 Degree-Sign C), wider band gap ({approx}0.78 eV), better data retention of 10 years at 167.5 Degree-Sign C, higher crystalline resistance, and faster crystallization speed compared with the conventional Ge{sub 2}Sb{sub 2}Te{sub 5}. The proper Zn atom added into Ge{sub 2}Sb{sub 2}Te{sub 5} serves as a center for suppression of the face-centered-cubic (fcc) phase to hexagonal close-packed (hcp) phase transition, and fcc phase has high thermal stability partially due to the bond recombination among Zn, Sb, and Te atoms.

Wang Guoxiang; Nie Qiuhua [Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Shen Xiang; Fu Jing; Xu Tiefeng; Dai Shixun [Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Wang, R. P. [Laser Physics Centre, Australian National University, Canberra, ACT 0200 (Australia); Wu Liangcai [Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2012-07-30T23:59:59.000Z

411

Effect of annealing on the electrical properties of thallium-doped PbTe single crystals  

SciTech Connect (OSTI)

It is found that electrical parameters of PbTe single crystals, the character of the dependences of these parameters on temperature and Tl impurity concentration, and the conductivity type (signs of {alpha} and R) are governed to a great extent by the temperature of preliminary annealing. The cause of this effect is that the concentration of doubly charged vacancies in the tellurium sublattice increases with an increase in the annealing temperature, as a result of which the formation of electrically neutral or singly charged complexes of impurity-vacancy type becomes more likely.

Ahmedova, G. A., E-mail: gulgunahmed@yahoo.com; Abdinova, G. J.; Abdinov, J. Sh. [National Academy of Sciences of Azerbaijan, Abdullaev Institute of Physics (Azerbaijan)

2011-02-15T23:59:59.000Z

412

Growth, Structure, and Magnetic Properties of CuFeTe{sub 2} Single Crystals  

SciTech Connect (OSTI)

CuFeTe{sub 2} single crystals were grown and the temperature dependence of their magnetic susceptibility in the temperature range 1.8-400 K was investigated. It is found that the magnetic susceptibility shows anomalies at temperatures T{sub s} = 65 and T{sub N} = 125 K. At T > 125 K, the crystal is in the paramagnetic state controlled by Fe{sup 2+} and Cu{sup 2+} ions with an effective magnetic moment of 1.44 {mu}B.

Dzhabbarov, A.I.; Orudzhev, S.K.; Guseinov, G.G.; Gakhramanov, N.F. [Institute of Physics, Academy of Sciences of Azerbaijan, pr. Dzhavida 33, Baku, 370143 (Azerbaijan)

2004-11-01T23:59:59.000Z

413

An Extended Radio Counterpart of TeV J2032+4130?  

E-Print Network [OSTI]

We carried out a 5-pointing mosaic observation of TeV J2032+4130 at 1.4 and 4.8 GHz with the VLA in April of 2003. The analysis of the 4.8GHz data indicate weak wispy shell-like radio structure(s) which are at least partially non-thermal. The radio data is compatible with one or more young supernova remnants or perhaps the signature of large scale cluster shocks in this region induced by the violent action of the many massive stars in Cyg OB2.

Y. M. Butt; J. A. Combi; J. Drake; J. P. Finley; A. Konopelko; M. Lister; J. Rodriguez; D. Shepherd

2007-03-01T23:59:59.000Z

414

CuAlTe{sub 2} under high temperature: An ab initio approach  

SciTech Connect (OSTI)

The structural properties of the ternary CuAlTe{sub 2} semiconductor are investigated using the full-potential linearized augmented plane wave plus local orbital (FP?LAPW+lo) method within the local density approximation in the frame of the density functional theory. Our calculated results for structural properties are in excellent agreement with experimental values in comparison to the previous theoretical results. Through the quasi - harmonic Debye model, we have obtained successfully the thermodynamic properties in the pressure range from 0 to 50 GPa and the temperature range from 0 to 1100 K.

Sharma, Monika, E-mail: monikasharma.fizics@gmail.co.in; Singh, Poonam, E-mail: monikasharma.fizics@gmail.co.in; Kumari, Meena, E-mail: monikasharma.fizics@gmail.co.in; Verma, U. P., E-mail: monikasharma.fizics@gmail.co.in [School of Studies in Physics, Jiwaji University, Gwalior-474011 (India)

2014-04-24T23:59:59.000Z

415

tt¯ production cross section in pp¯ collisions at s=1.8 TeV  

Science Journals Connector (OSTI)

Results are presented on a measurement of the tt¯ pair production cross section in pp¯ collisions at s=1.8 TeV from nine independent decay channels. The data were collected by the DØ experiment during the 1992–1996 run of the Fermilab Tevatron Collider. A total of 80 candidate events is observed with an expected background of 38.8±3.3 events. For a top quark mass of 172.1 GeV/c2, the measured cross section is 5.69±1.21(stat)±1.04(syst) pb.

V. M. Abazov et al. ((DØ Collaboration))

2003-01-15T23:59:59.000Z

416

Electrolyte electroreflectance in the characterization of HgCdTe heterostructures  

Science Journals Connector (OSTI)

We have used the technique of electrolyte electroreflectance (EER) coupled with electrochemicaletching to profile through epitaxial layers and heterostructures of Hg1?x Cd x Te. The need for proper electrochemical control during EER measurements is discussed. The resolution achieved in both composition ?x=±0.002 and etch depth ±30 Å has made possible the observation of the variations in composition at the ambient/epilayer epilayer/substrate and high?x/low?x interfaces. Good correlations of the profiles observed have been obtained with secondary ion mass spectroscopy electron dispersive x?ray diffraction and Rutherford backscattering measurements. The variation of the broadening parameter ? at these interfaces is also discussed.

L. E. A. Berlouis; L. M. Peter; M. G. Astles; J. Gough; R. G. Humphreys; S. J. C. Irvine; V. Steward

1987-01-01T23:59:59.000Z

417

Quantum interference in exciton-Mn spin interactions in a CdTe semiconductor quantum dot  

E-Print Network [OSTI]

We show theoretically and experimentally the existence of a new quantum interference(QI) effect between the electron-hole interactions and the scattering by a single Mn impurity. Theoretical model, including electron-valence hole correlations, the short and long range exchange interaction of Mn ion with the heavy hole and with electron and anisotropy of the quantum dot, is compared with photoluminescence spectroscopy of CdTe dots with single magnetic ions. We show how design of the electronic levels of a quantum dot enable the design of an exciton, control of the quantum interference and hence engineering of light-Mn interaction.

Trojnar, A; Kadantsev, E; Hawrylak, P; Goryca, M; Kazimierczuk, T; Kossacki, P; Wojnar, P; Potemski, M

2011-01-01T23:59:59.000Z

418

Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells  

SciTech Connect (OSTI)

Radial p-n junction nanowire (NW) solar cells with high densities of CdTe NWs coated with indium tin oxide (ITO)/ZnO/CdS triple shells were grown with excellent heterointerfaces. The optical reflectance of the devices was lower than for equivalent planar films by a factor of 100. The best efficiency for the NW solar cells was ??=?2.49%, with current transport being dominated by recombination, and the conversion efficiencies being limited by a back contact barrier (?{sub B}?=?0.52?eV) and low shunt resistances (R{sub SH}?

Williams, B. L.; Phillips, L.; Major, J. D.; Durose, K. [Stephenson Institute for Renewable Energy, University of Liverpool, Chadwick Building, Peach St., Liverpool L69 7ZF (United Kingdom); Taylor, A. A.; Mendis, B. G.; Bowen, L. [G. J. Russell Microscopy Facility, University of Durham, South Road, Durham DH1 3LE (United Kingdom)

2014-02-03T23:59:59.000Z

419

Quantum interference in exciton-Mn spin interactions in a CdTe semiconductor quantum dot  

E-Print Network [OSTI]

We show theoretically and experimentally the existence of a new quantum interference(QI) effect between the electron-hole interactions and the scattering by a single Mn impurity. Theoretical model, including electron-valence hole correlations, the short and long range exchange interaction of Mn ion with the heavy hole and with electron and anisotropy of the quantum dot, is compared with photoluminescence spectroscopy of CdTe dots with single magnetic ions. We show how design of the electronic levels of a quantum dot enable the design of an exciton, control of the quantum interference and hence engineering of light-Mn interaction.

A. Trojnar; M. Korkusinski; E. Kadantsev; P. Hawrylak; M. Goryca; T. Kazimierczuk; P. Kossacki; P. Wojnar; M. Potemski

2011-05-04T23:59:59.000Z

420

Anomalous scaling and super-roughness in the growth of CdTe polycrystalline films  

E-Print Network [OSTI]

CdTe films grown on glass substrates covered by fluorine doped tin oxide by Hot Wall Epitaxy (HWE) were studied through the interface dynamical scaling theory. Direct measures of the dynamical exponent revealed an intrinsically anomalous scaling characterized by a global roughness exponent $\\alpha$ distinct from the local one (the Hurst exponent $H$), previously reported [Ferreira \\textit{et al}., Appl. Phys. Lett. \\textbf{88}, 244103 (2006)]. A variety of scaling behaviors was obtained with varying substrate temperature. In particular, a transition from a intrinsically anomalous scaling regime with $H\

Angélica S. Mata; Silvio C. Ferreira, Jr.; Igor R. B. Ribeiro; Sukarno O. Ferreira

2011-01-06T23:59:59.000Z

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421

Technical evaluation of Solar Cells, Inc., CdTe modules and array at NREL  

SciTech Connect (OSTI)

The Engineering and Technology Validation Team at the National Renewable Energy Laboratory (NREL) conducts in-situ technical evaluations of polycrystalline thin-film photovoltaic (PV) modules and arrays. This paper focuses on the technical evaluation of Solar Cells, Inc., (SCI) cadmium telluride (CdTe) module and array performance by attempting to correlate individual module and array performance. This is done by examining the performance and stability of the modules and array over a period of more than one year. Temperature coefficients for module and array parameters (P{sub max}V{sub oc}, V{sub max}, I{sub sc}, I{sub max}) are also calculated.

Kroposki, B.; Strand, T.; Hansen, R. [and others] [and others

1996-05-01T23:59:59.000Z

422

TeV Scale Quantum Gravity and Mirror Supernovae as Sources of Gamma Ray Bursts  

E-Print Network [OSTI]

Mirror matter models have been suggested recently as an explanation of neutrino puzzles and microlensing anomalies. We show that mirror supernovae can be a copious source of energetic gamma rays if one assumes that the quantum gravity scale is in the TeV range. We show that under certain assumptions plausible in the mirror models, the gamma energies could be degraded to the 10 MeV range (and perhaps even further) so as to provide an explanation of observed gamma ray bursts. This mechanism for the origin of the gamma ray bursts has the advantage that it neatly avoids the ``baryon load problem''.

R. N. Mohapatra; S. Nussinov; V. L. Teplitz

1999-09-22T23:59:59.000Z

423

J/psi polarization in pp collisions at sqrt(s)=7 TeV  

E-Print Network [OSTI]

The ALICE Collaboration has studied J/psi production in pp collisions at sqrt(s)=7 TeV at the LHC through its muon pair decay. The polar and azimuthal angle distributions of the decay muons were measured, and results on the J/psi polarization parameters lambda_theta and lambda_phi were obtained. The study was performed in the kinematic region 2.5

The ALICE Collaboration; B. Abelev; A. Abrahantes Quintana; D. Adamova; A. M. Adare; M. M. Aggarwal; G. Aglieri Rinella; A. G. Agocs; A. Agostinelli; S. Aguilar Salazar; Z. Ahammed; N. Ahmad; A. Ahmad Masoodi; S. U. Ahn; A. Akindinov; D. Aleksandrov; B. Alessandro; R. Alfaro Molina; A. Alici; A. Alkin; E. AlmarazAvina; T. Alt; V. Altini; S. Altinpinar; I. Altsybeev; C. Andrei; A. Andronic; V. Anguelov; C. Anson; T. Anticic; F. Antinori; P. Antonioli; L. Aphecetche; H. Appelshauser; N. Arbor; S. Arcelli; A. Arend; N. Armesto; R. Arnaldi; T. Aronsson; I. C. Arsene; M. Arslandok; A. Asryan; A. Augustinus; R. Averbeck; T. C. Awes; J. Aysto; M. D. Azmi; M. Bach; A. Badala; Y. W. Baek; R. Bailhache; R. Bala; R. Baldini Ferroli; A. Baldisseri; A. Baldit; F. Baltasar Dos Santos Pedrosa; J. Ban; R. C. Baral; R. Barbera; F. Barile; G. G. Barnafoldi; L. S. Barnby; V. Barret; J. Bartke; M. Basile; N. Bastid; B. Bathen; G. Batigne; B. Batyunya; C. Baumann; I. G. Bearden; H. Beck; I. Belikov; F. Bellini; R. Bellwied; E. Belmont-Moreno; S. Beole; I. Berceanu; A. Bercuci; Y. Berdnikov; D. Berenyi; C. Bergmann; L. Betev; A. Bhasin; A. K. Bhati; N. Bianchi; L. Bianchi; C. Bianchin; J. Bielcik; J. Bielcikova; A. Bilandzic; F. Blanco; F. Blanco; D. Blau; C. Blume; M. Boccioli; N. Bock; A. Bogdanov; H. Boggild; M. Bogolyubsky; L. Boldizsar; M. Bombara; J. Book; H. Borel; A. Borissov; C. Bortolin; S. Bose; F. Bossu; M. Botje; S. Bottger; B. Boyer; P. Braun-Munzinger; M. Bregant; T. Breitner; M. Broz; R. Brun; E. Bruna; G. E. Bruno; D. Budnikov; H. Buesching; S. Bufalino; K. Bugaiev; O. Busch; Z. Buthelezi; D. Caffarri; X. Cai; H. Caines; E. Calvo Villar; P. Camerini; V. Canoa Roman; G. Cara Romeo; W. Carena; F. Carena; N. Carlin Filho; F. Carminati; C. A. Carrillo Montoya; A. Casanova Diaz; M. Caselle; J. Castillo Castellanos; J. F. Castillo Hernandez; E. A. R. Casula; V. Catanescu; C. Cavicchioli; J. Cepila; P. Cerello; B. Chang; S. Chapeland; J. L. Charvet; S. Chattopadhyay; S. Chattopadhyay; M. Cherney; C. Cheshkov; B. Cheynis; E. Chiavassa; V. Chibante Barroso; D. D. Chinellato; P. Chochula; M. Chojnacki; P. Christakoglou; C. H. Christensen; P. Christiansen; T. Chujo; S. U. Chung; C. Cicalo; L. Cifarelli; F. Cindolo; J. Cleymans; F. Coccetti; J. -P. Coffin; F. Colamaria; D. Colella; G. Conesa Balbastre; Z. Conesa del Valle; P. Constantin; G. Contin; J. G. Contreras; T. M. Cormier; Y. Corrales Morales; P. Cortese; I. Cortes Maldonado; M. R. Cosentino; F. Costa; M. E. Cotallo; E. Crescio; P. Crochet; E. Cruz Alaniz; E. Cuautle; L. Cunqueiro; A. Dainese; H. H. Dalsgaard; A. Danu; D. Das; I. Das; K. Das; S. Dash; A. Dash; S. De; A. De Azevedo Moregula; G. O. V. de Barros; A. De Caro; G. de Cataldo; J. de Cuveland; A. De Falco; D. De Gruttola; H. Delagrange; E. Del Castillo Sanchez; A. Deloff; V. Demanov; N. De Marco; E. Denes; S. De Pasquale; A. Deppman; G. D Erasmo; R. de Rooij; D. Di Bari; T. Dietel; C. Di Giglio; S. Di Liberto; A. Di Mauro; P. Di Nezza; R. Divia; O. Djuvsland; A. Dobrin; T. Dobrowolski; I. Dominguez; B. Donigus; O. Dordic; O. Driga; A. K. Dubey; L. Ducroux; P. Dupieux; M. R. Dutta Majumdar; A. K. Dutta Majumdar; D. Elia; D. Emschermann; H. Engel; H. A. Erdal; B. Espagnon; M. Estienne; S. Esumi; D. Evans; G. Eyyubova; D. Fabris; J. Faivre; D. Falchieri; A. Fantoni; M. Fasel; R. Fearick; A. Fedunov; D. Fehlker; L. Feldkamp; D. Felea; G. Feofilov; A. Fernandez Tellez; E. G. Ferreiro; A. Ferretti; R. Ferretti; J. Figiel; M. A. S. Figueredo; S. Filchagin; R. Fini; D. Finogeev; F. M. Fionda; E. M. Fiore; M. Floris; S. Foertsch; P. Foka; S. Fokin; E. Fragiacomo; M. Fragkiadakis; U. Frankenfeld; U. Fuchs; C. Furget; M. Fusco Girard; J. J. Gaardhoje; M. Gagliardi; A. Gago; M. Gallio; D. R. Gangadharan; P. Ganoti; C. Garabatos; E. Garcia-Solis; I. Garishvili; J. Gerhard; M. Germain; C. Geuna; A. Gheata; M. Gheata; B. Ghidini; P. Ghosh; P. Gianotti; M. R. Girard; P. Giubellino; E. Gladysz-Dziadus; P. Glassel; R. Gomez; L. H. Gonzalez-Trueba; P. Gonzalez-Zamora; S. Gorbunov; A. Goswami; S. Gotovac; V. Grabski; L. K. Graczykowski; R. Grajcarek; A. Grelli; A. Grigoras; C. Grigoras; V. Grigoriev; S. Grigoryan; A. Grigoryan; B. Grinyov; N. Grion; P. Gros; J. F. Grosse-Oetringhaus; J. -Y. Grossiord; R. Grosso; F. Guber; R. Guernane; C. Guerra Gutierrez; B. Guerzoni; M. Guilbaud; K. Gulbrandsen; T. Gunji; A. Gupta; R. Gupta; H. Gutbrod; O. Haaland; C. Hadjidakis; M. Haiduc; H. Hamagaki; G. Hamar; B. H. Han; L. D. Hanratty; A. Hansen; Z. Harmanova; J. W. Harris; M. Hartig; D. Hasegan; D. Hatzifotiadou; A. Hayrapetyan; M. Heide; H. Helstrup; A. Herghelegiu; G. Herrera Corral; N. Herrmann; K. F. Hetland; B. Hicks; P. T. Hille; B. Hippolyte; T. Horaguchi; Y. Hori; P. Hristov; I. Hrivnacova; M. Huang; S. Huber; T. J. Humanic; D. S. Hwang; R. Ichou

2012-02-24T23:59:59.000Z

424

Observations of Large Scale Sidereal Anisotropy in 1 and 11 TeV cosmic rays from the MINOS experiment  

SciTech Connect (OSTI)

The MINOS Near and Far Detectors are two large, functionally-identical, steel-scintillating sampling calorimeters located at depths of 220 mwe and 2100 mwe respectively. The detectors observe the muon component of hadronic showers produced from cosmic ray interactions with nuclei in the earth's atmosphere. From the arrival direction of these muons, the anisotropy in arrival direction of the cosmic ray primaries can be determined. The MINOS Near and Far Detector have observed anisotropy on the order of 0.1% at 1 and 11 TeV respectively. The amplitude and phase of the first harmonic at 1 TeV are 8.2 {+-} 1.7(stat.) x 10{sup -4} and (8.9 {+-} 12.1(stat.)){sup o}, and at 11 TeV are 3.8 {+-} 0.5(stat.) x 10{sup -4} and (27.2 {+-} 7.2(stat.)){sup o}.

de Jong, J.K.

2012-01-01T23:59:59.000Z

425

Excited states in 139Te and the properties of r-process nuclei with Z?50 and N>86  

Science Journals Connector (OSTI)

Excited states in 139Te were observed for the first time, using EUROGAM2 multidetector array to measure prompt-? radiation following the spontaneous fission of 248Cm. The systematic behavior of excitation energies in the N=87 isotones and the multipolarity measurements suggest spin 7/2- for the ground state and 9/2- for the 271.0 keV level in 139Te. The 271.0 keV level most likely corresponds to the ?h9/2 single-particle excitation. A shape transition from spherical to prolate Te isotopes is observed at the neutron number N=87, in accord with the Hartree-Fock plus BCS, PES calculations. Predictions for excitations in the 137Sn nucleus are made based on the extended systematics obtained for the N=87 isotones.

W. Urban; W. R. Phillips; N. Schulz; B. J. P. Gall; I. Ahmad; M. Bentaleb; J. L. Durell; M. A. Jones; M. J. Leddy; E. Lubkiewicz; L. R. Morss; A. G. Smith; B. J. Varley

2000-09-15T23:59:59.000Z

426

Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms  

DOE Patents [OSTI]

Reduction of surface leakage current by surface passivation of Cd.sub.1-x Zn.sub.x Te and other materials using hyperthermal oxygen atoms. Surface effects are important in the performance of CdZnTe room-temperature radiation detectors used as spectrometers since the dark current is often dominated by surface leakage. A process using high-kinetic-energy, neutral oxygen atoms (.about.3 eV) to treat the surface of CdZnTe detectors at or near ambient temperatures is described. Improvements in detector performance include significantly reduced leakage current which results in lower detector noise and greater energy resolution for radiation measurements of gamma- and X-rays, thereby increasing the accuracy and sensitivity of measurements of radionuclides having complex gamma-ray spectra, including special nuclear materials.

Hoffbauer, Mark A. (Los Alamos, NM); Prettyman, Thomas H. (Los Alamos, NM)

2001-01-01T23:59:59.000Z

427

Guideline to good practices for control and calibration of measuring and test equipment (M TE) at DOE nuclear facilities  

SciTech Connect (OSTI)

The purpose of the Guideline to Good Practices for Control and Calibration of Measuring and Test Equipment (M TE) at DOE Nuclear Facilities is to provide contractor maintenance organizations with information that may be used for the development and implementation of a rigorously controlled maintenance program directed at controlling and calibrating M TE used for maintenance tasks at DOE nuclear facilities. This document is intended to be an example guideline for the implementation of DOE Order 4330.4A, Maintenance Management Program, Chapter II, Element 11. DOE contractors should not feel obligated to adopt all parts of this guide. Rather, they should use the information contained herein as a guide for developing an M TE program applicable to their facility.

Not Available

1993-03-01T23:59:59.000Z

428

Guideline to good practices for control and calibration of measuring and test equipment (M&TE) at DOE nuclear facilities  

SciTech Connect (OSTI)

The purpose of the Guideline to Good Practices for Control and Calibration of Measuring and Test Equipment (M&TE) at DOE Nuclear Facilities is to provide contractor maintenance organizations with information that may be used for the development and implementation of a rigorously controlled maintenance program directed at controlling and calibrating M&TE used for maintenance tasks at DOE nuclear facilities. This document is intended to be an example guideline for the implementation of DOE Order 4330.4A, Maintenance Management Program, Chapter II, Element 11. DOE contractors should not feel obligated to adopt all parts of this guide. Rather, they should use the information contained herein as a guide for developing an M&TE program applicable to their facility.

Not Available

1993-03-01T23:59:59.000Z

429

Search for Quark Compositeness with the Dijet Centrality Ratio in pp Collisions at sqrt[s]=7??????TeV  

SciTech Connect (OSTI)

A search for quark compositeness in the form of quark contact interactions, based on hadronic jet pairs (dijets) produced in proton-proton collisions at sqrt(s)=7 TeV, is described. The data sample of the study corresponds to an integrated luminosity of 2.9 inverse picobarns collected with the CMS detector at the LHC. The dijet centrality ratio, which quantifies the angular distribution of the dijets, is measured as a function of the invariant mass of the dijet system and is found to agree with the predictions of the Standard Model. A statistical analysis of the data provides a lower limit on the energy scale of quark contact interactions. The sensitivity of the analysis is such that the expected limit is 2.9 TeV; because the observed value of the centrality ratio at high invariant mass is below the expectation, the observed limit is 4.0 TeV at the 95% confidence level.

Khachatryan, Vardan; et al.

2010-12-01T23:59:59.000Z

430

Crystal growth and electronic properties of a 3D Rashba material, BiTeI, with adjusted carrier concentrations  

Science Journals Connector (OSTI)

3D Rashba materials can be a leading player in spin-related novel phenomena, ranging from the metallic extreme (unconventional superconductivity) to the transport intermediate (spin Hall effects) to the novel insulating variant (3D topological insulating states). As the essential backbone for both fundamental and applied research of such a 3D Rashba material, this study established the growth of sizeable single crystals of a candidate compound BiTeI with adjusted carrier concentrations. Three techniques (standard vertical Bridgman, modified horizontal Bridgman, and vapour transport) were employed, and BiTeI crystals (>1 ? 1 ? 0.2 mm3) with fundamentally different electronic states from metallic to insulating were successfully grown by the chosen technique. The 3D Rashba electronic states, including the Fermi surface topology, for the corresponding carrier concentrations of the obtained BiTeI crystals were revealed by relativistic first-principles calculations.

Manabu Kanou; Takao Sasagawa

2013-01-01T23:59:59.000Z

431

High energy resolution hard X-ray and gamma-ray imagers using CdTe diode devices  

E-Print Network [OSTI]

We developed CdTe double-sided strip detectors (DSDs or cross strip detectors) and evaluated their spectral and imaging performance for hard X-rays and gamma-rays. Though the double-sided strip configuration is suitable for imagers with a fine position resolution and a large detection area, CdTe diode DSDs with indium (In) anodes have yet to be realized due to the difficulty posed by the segmented In anodes. CdTe diode devices with aluminum (Al) anodes were recently established, followed by a CdTe device in which the Al anodes could be segmented into strips. We developed CdTe double-sided strip devices having Pt cathode strips and Al anode strips, and assembled prototype CdTe DSDs. These prototypes have a strip pitch of 400 micrometer. Signals from the strips are processed with analog ASICs (application specific integrated circuits). We have successfully performed gamma-ray imaging spectroscopy with a position resolution of 400 micrometer. Energy resolution of 1.8 keV (FWHM: full width at half maximum) was obtained at 59.54 keV. Moreover, the possibility of improved spectral performance by utilizing the energy information of both side strips was demonstrated. We designed and fabricated a new analog ASIC, VA32TA6, for the readout of semiconductor detectors, which is also suitable for DSDs. A new feature of the ASIC is its internal ADC function. We confirmed this function and good noise performance that reaches an equivalent noise charge of 110 e- under the condition of 3-4 pF input capacitance.

Shin Watanabe; Shin-nosuke Ishikawa; Hiroyuki Aono; Shin'ichiro Takeda; Hirokazu Odaka; Motohide Kokubun; Tadayuki Takahashi; Kazuhiro Nakazawa; Hiroyasu Tajima; Mitsunobu Onishi; Yoshikatsu Kuroda

2008-11-04T23:59:59.000Z

432

Decaying dark matter as a probe of unification and TeV spectroscopy  

Science Journals Connector (OSTI)

In supersymmetric unified theories the dark matter particle can decay, just like the proton, through grand unified interactions with a lifetime of order of ?1026??sec. Its decay products can be detected by several experiments—including Fermi, HESS, PAMELA, ATIC, and IceCube—opening our first direct window to physics at the TeV scale and simultaneously at the unification scale ?1016??GeV. We consider possibilities for explaining the electron/positron spectra observed by HESS, PAMELA, and ATIC, and the resulting predictions for the gamma-ray, electron/positron, and neutrino spectra as will be measured, for example, by Fermi and IceCube. The discovery of an isotropic, hard gamma ray spectral feature at Fermi would be strong evidence for dark matter and would disfavor astrophysical sources such as pulsars. Substructure in the cosmic ray spectra probes the spectroscopy of new TeV-mass particles. For example, a preponderance of electrons in the final state can result from the lightness of selectrons relative to squarks. Decaying dark matter acts as a sparticle injector with an energy reach potentially higher than the LHC. The resulting cosmic ray flux depends only on the values of the weak and unification scales.

Asimina Arvanitaki; Savas Dimopoulos; Sergei Dubovsky; Peter W. Graham; Roni Harnik; Surjeet Rajendran

2009-09-09T23:59:59.000Z

433

Probing IrTe2 crystal symmetry by polarized Raman scattering  

Science Journals Connector (OSTI)

Polarized Raman scattering measurements on IrTe2 single crystals carried out over the 15–640 K temperature range, and across the structural phase transition, reveal different insights regarding the crystal symmetry. In the high temperature regime three Raman active modes are observed at all of the studied temperatures above the structural phase transition, rather than two as predicted by the factor group analysis for the assumed P3¯m1 symmetry. This indicates that the actual symmetry of the high temperature phase is lower than previously thought. The observation of an additional Eg mode at high temperature can be explained by doubling of the original trigonal unit cell along the c axis and within the P3¯c1 symmetry. In the low temperature regime (below 245 K) the other Raman modes appear as a consequence of the symmetry lowering phase transition and the corresponding increase of the primitive cell. All of the modes observed below the phase transition temperature can be assigned within the monoclinic crystal symmetry. The temperature dependence of the Raman active phonons in both phases is mainly driven by anharmonicity effects. The results call for reconsideration of the crystallographic phases of IrTe2.

N. Lazarevi?; E. S. Bozin; M. Š?epanovi?; M. Opa?i?; Hechang Lei (???); C. Petrovic; Z. V. Popovi?

2014-06-16T23:59:59.000Z

434

Hidden extra U(1) at the electroweak/TeV scale  

SciTech Connect (OSTI)

We propose a simple extension of the standard model (SM) by adding an extra U(1) symmetry which is hidden from the SM sector. Such a hidden U(1) has not been considered before, and its existence at the TeV scale can be explored at the LHC. This hidden U(1) does not couple directly to the SM particles, and couples only to new SU(2){sub L} singlet exotic quarks and singlet Higgs bosons, and is broken at the TeV scale. The dominant signals at the high-energy hadron colliders are multilepton and multi-b-jet final states with or without missing energy. We calculate the signal rates as well as the corresponding standard model background for these final states. A very distinctive signal is 6 high p{sub T} b-jets in the final state with no missing energy. For a wide range of the exotic quarks masses the signals are observable above the background at the LHC.

Grossmann, B. N.; Rai, Santosh Kumar [Department of Physics and Oklahoma Center for High Energy Physics, Oklahoma State University, Stillwater, Oklahoma 74078 (United States); McElrath, B. [Universitaet Heidelberg, 16 Philosophenweg, 69120 Heidelberg (Germany); Nandi, S. [Department of Physics and Oklahoma Center for High Energy Physics, Oklahoma State University, Stillwater, Oklahoma 74078 (United States); Fermi National Accelerator Laboratory, P.O. Box 500, Batavia, Illinois 60510 (United States)

2010-09-01T23:59:59.000Z

435

The GeV-TeV Connection in Galactic gamma-ray Sources  

SciTech Connect (OSTI)

Recent observations by atmospheric Cherenkov telescopes such as H.E.S.S. and MAGIC have revealed a large number of new sources of very-high-energy (VHE) gamma-rays above 100 GeV, mostly concentrated along the Galactic plane. At lower energies (100 MeV - 10 GeV) the satellite-based instrument EGRET revealed a population of sources clustering along the Galactic Plane. Given their adjacent energy bands a systematic correlation study between the two source classes seems appropriate. While only a few of the sources connect, both in terms of positional coincidence and spectral consistency, most of the detections occur only in one or the other energy domain. In these cases, for the first time consistent upper limits in the other energy band have been derived. Here, the populations of Galactic sources in both energy domains are characterized on observational as well as on theoretical grounds, followed by an interpretation on their similarities and differences. The observational data at this stage suggest rather different major source populations at GeV and TeV energies. With regards to preparations for the upcoming GLAST mission that will cover the energy range bridging GeV and TeV instruments this paper investigates the connection between the population of sources in these bands and concludes with predictions for commonly observable sources for GLAST-LAT detections.

Funk, S.; /KIPAC, Menlo Park; Reimer, O.; /Stanford U., HEPL /KIPAC, Menlo Park; Torres, Diego F.; /ICREA, Barcelona; Hinton, J.A.; /Leeds U.

2007-09-28T23:59:59.000Z

436

Study of implantation in HgCdTe by electrolyte electroreflectance  

Science Journals Connector (OSTI)

Electrolyte electroreflectance (EER) and Hall?effect measurements have been performed on liquid phase epitaxy (LPE) layers of Hg1?x Cd x Te as grown with x=0.31 implanted with B ions implanted and annealed and annealed but not implanted. The use of our generalized theory to fit the EER results allowed us to study in detail as a function of depth the roles of implantation and annealing in Hg migration and in the formation of extended two?dimensional defects antisites and inhomogeneous strains. This is the first systematic EER study of the effects of implantation in state?of?the?art LPE materials. In the region affected by implantation our results suggest the diffusion of displaced Hg in the postimplant annealing process is associated with Te antisite formation and with compensating inhomogeneous strains. Moreover this Hg migration generates a region located approximately in the middle of the n?type layer which actually has a wider gap than the bulk. The relaxation of the lattice and the healing of damage promoted by the anneal are accompanied by a Hg redistribution which tends to lessen the disruptive effects of the antisite complexes. This picture of the implantation process is consistent with earlier conclusions.

P. M. Raccah; J. W. Garland; Z. Zhang; D. Yang; L. O. Bubulac; W. E. Tennant

1987-01-01T23:59:59.000Z

437

The hard TeV spectrum of 1ES 0229+200: new clues from Swift  

E-Print Network [OSTI]

The BL Lac object 1ES 0229+200 (z=0.14) has been detected by HESS during observations taking place in 2005-2006. The TeV spectrum, when corrected for the absorption of gamma-ray photons through the interaction with the extragalactic background light, is extremely hard, even if the most conservative level for the background is considered. The case of 1ES 0229+200 is very similar to that of 1ES 1101-232, for which a possible explanation, in the framework of the standard one-zone synchrotron-self Compton model, is that the high-energy emission is synchrotron-self Compton radiation of electrons distributed as a power law with a large value of the minimum energy. In this scenario the hard TeV spectrum is accompanied by a very hard synchrotron continuum below the soft X-ray band. We will show that recent Swift observations of 1ES 0229+200 in the critical UV-X-ray band strongly support this model, showing the presence of the expected spectral break and hard continuum between the UV and the X-ray bands.

Tavecchio, F; Ghirlanda, G; Franceschini, A

2009-01-01T23:59:59.000Z

438

Study of the effect of the stress on CdTe nuclear detectors  

SciTech Connect (OSTI)

CdTe detectors are commonly used for X and ? ray applications. The performance of these detectors is strongly affected by different types of mechanical stress; such as that caused by differential expansion between the semiconductor and its intimate metallic contacts and that caused by applied pressure during the bonding process. The aim of this work was to study the effects of stress on the performance of CdTe detectors. A difference in expansion coefficients induces transverse stress under the metallic contact, while contact pressure induces longitudinal stress. These stresses have been simulated by applying known static pressures. For the longitudinal case, the pressure was applied directly to the metallic contact; while in the transverse case, it was applied to the side. We have studied the effect of longitudinal and transverse stresses on the electrical characteristics including leakage current measurements and ?-ray detection performance. We have also investigated induced defects, their nature, activation energies, cross sections, and concentrations under the applied stress by using photo-induced current transient spectroscopy and thermoelectric effect spectroscopy techniques. The operational stress limit is also given.

Ayoub, M.; Radley, I.; Mullins, J. T. [Kromek, Thomas Wright way, TS21 3FD, Sedgefield, County Durham (United Kingdom)] [Kromek, Thomas Wright way, TS21 3FD, Sedgefield, County Durham (United Kingdom); Hage-Ali, M. [CLEA, Airport road, Beirut (Lebanon)] [CLEA, Airport road, Beirut (Lebanon)

2013-09-14T23:59:59.000Z

439

Charge transport properties in CdZnTe detectors grown by the vertical Bridgman technique  

SciTech Connect (OSTI)

Presently, a great amount of effort is being devoted to the development of CdTe and CdZnTe (CZT) detectors for a large variety of applications such as medical, industrial, and space research. We present the spectroscopic properties of some CZT crystals grown by the standard vertical Bridgman method and by the boron oxide encapsulated vertical Bridgman method, which has been recently implemented at IMEM-CNR (Parma, Italy). In this technique, the crystal is grown in an open quartz crucible fully encapsulated by a thin layer of liquid boron oxide. This method prevents contact between the crystal and the crucible, thereby allowing larger single grains with a lower dislocation density to be obtained. Several mono-electrode detectors were realized, with each having two planar gold contacts. The samples are characterized by an active area of about 7 mm x 7 mm and thicknesses ranging from 1 to 2 mm. The charge transport properties of the detectors have been studied by mobility-lifetime ({mu} x {tau}) product measurements, carried out at the European Synchrotron Radiation Facility (Grenoble, France) in the planar transverse field configuration, where the impinging beam direction is orthogonal to the collecting electric field. We have performed several fine scans between the electrodes with a beam spot of 10 {mu}m x 10 {mu}m at various energies from 60 to 400 keV. In this work, we present the test results in terms of the ({mu} x {tau}) product of both charge carriers.

Auricchio, N.; Caroli, E. [INAF/IASF-Bologna, Bologna, 40129 (Italy); Marchini, L.; Zappettini, A. [IMEM-CNR, Parma, 43100 (Italy); Abbene, L. [DIFI, University of Palermo, Palermo, 90128 (Italy); Honkimaki, V. [European Synchrotron Radiation Facility, Grenoble, 38000 (France)

2011-12-15T23:59:59.000Z

440

TeV Burst of Gamma-Ray Bursts and Ultra High Energy Cosmic Rays  

E-Print Network [OSTI]

Some recent experiments detecting very high energy (VHE) gamma-rays above 10-20 TeV independently reported VHE bursts for some of bright gamma-ray bursts (GRBs). If these signals are truly from GRBs, these GRBs must emit a much larger amount of energy as VHE gamma-rays than in the ordinary photon energy range of GRBs (keV-MeV). We show that such extreme phenomena can be reasonably explained by synchrotron radiation of protons accelerated to \\sim 10^{20-21} eV, which has been predicted by Totani (1998a). Protons seem to carry about (m_p/m_e) times larger energy than electrons, and hence the total energy liberated by one GRB becomes as large as \\sim 10^{56} (\\Delta \\Omega / 4 \\pi) ergs. Therefore a strong beaming of GRB emission is highly likely. Extension of the VHE spectrum beyond 20 TeV gives a nearly model-independent lower limit of the Lorentz factor of GRBs, as $\\gamma \\gtilde 500$. Furthermore, our model gives the correct energy range and time variability of ordinary keV-MeV gamma-rays of GRBs by synchrotron radiation of electrons. Therefore the VHE bursts of GRBs strongly support the hypothesis that ultra high energy cosmic rays observed on the Earth are produced by GRBs.

Tomonori Totani

1998-10-14T23:59:59.000Z

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441

Analysis of the Junction Properties of CdS/CdTe Devices in Substrate and Superstrate Configurations  

SciTech Connect (OSTI)

The best efficiency of CdS/CdTe devices fabricated in the substrate configuration reported to date is about 8%, which is about half the 17.3% reported for the conventional superstrate configuration. The performance of substrate devices is affected by lower open-circuit voltage (Voc), about 700 mV, and low fill factor (FF), which indicates that these devices are primarily limited by non-ideal junction properties and possibly by the ohmic contact to CdTe. In our study of the junction properties of superstrate devices, we show that lower-Voc devices (< 720 mV) with SnO2/CdTe and CdS/CdTe structures are true heterojunction devices. High charged defect density at the heterointerfaces is present in the depletion region and contributes to the dark current density, thereby reducing Voc. On the other hand, for higher-performance devices with Voc > 800 mV, the junction is between an n-type, Te-rich CdSTe alloy with a bandgap of 1.45 eV and p-type CdTe with a bandgap of 1.5 eV. Because the crystal structure of both the Te-rich alloy and the CdTe is cubic zinc blende, and the lattice mismatch between the two is minimal, the device in this case can be considered a quasi-homojunction. These higher-Voc devices are therefore affected less by the high charged defect density at the hetero-interface, which lies outside of the depletion region. We present analysis of the junction properties of our recent and improved substrate-configuration devices with Voc well in excess of 800 mV, FF approaching 60%, and efficiencies around 10%. We also compare devices fabricated in both the substrate and superstrate configurations and with comparable Voc in the range of 700 to more than 800 mV. Photoluminescence (PL) and temperature-dependent PL, current density-voltage and quantum efficiency analysis, and modulated reflectance measurements are used to study device properties.

Dhere, R. G.; Duenow, J. N.; DeHart, C. M.; Li, J. V.; Kuciauskas, D.; Young, M. R.; Alberi, K.; Mascarenhas, A.; Gessert, T. A.

2011-01-01T23:59:59.000Z

442

Study of the intermediate layer at the n{sup +}-CdS/p-CdTe interface  

SciTech Connect (OSTI)

The effect of production conditions and subsequent stimulation by ultrasonic irradiation on the formation of a solid solution at the n-CdS/p-CdTe interface in solar cells has been investigated. The phase composition of the solid-solution transient layer was investigated by a nondestructive photoelectric method (measurement of the spectral distribution of photosensitivity in the gate and photodiode modes). It is shown that the phase composition and thickness of the intermediate CdTe{sub 1-x}S{sub x} layer depend strongly on the heterostructure formation conditions.

Muzafarova, S. A., E-mail: samusu@rambler.ru; Aitbaev, B. U.; Mirsagatov, Sh. A. [Academy of Sciences of Republic Uzbekistan, Physicotechnical Institute, NPO Fizika solntsa (Uzbekistan); Durshimbetov, K. [Karakalpak State University (Uzbekistan); Zhanabergenov, Zh. [Karakalpak State Pedagogical Institute (Uzbekistan)

2008-12-15T23:59:59.000Z

443

ILC phenomenology in a TeV scale radiative seesaw model for neutrino mass, dark matter and baryon asymmetry  

E-Print Network [OSTI]

We discuss phenomenology in a new TeV scale model which would explain neutrino oscillation, dark matter, and baryon asymmetry of the Universe simultaneously by the dynamics of the extended Higgs sector and TeV-scale right-handed neutrinos. Tiny neutrino masses are generated at the three-loop level due to the exact $Z_2$ symmetry, by which the stability of the dark matter candidate is guaranteed. The model provides various discriminative predictions in Higgs phenomenology, which can be tested at the Large Hadron Collider and the International Linear Collider.

Mayumi Aoki; Shinya Kanemura; Osamu Seto

2010-08-14T23:59:59.000Z

444

Direct Analysis of JV-Curves Applied to an Outdoor-Degrading CdTe Module (Presentation)  

SciTech Connect (OSTI)

We present the application of a phenomenological four parameter equation to fit and analyze regularly measured current density-voltage JV curves of a CdTe module during 2.5 years of outdoor operation. The parameters are physically meaningful, i.e. the short circuit current density Jsc, open circuit voltage Voc and differential resistances Rsc, and Roc. For the chosen module, the fill factor FF degradation overweighs the degradation of Jsc and Voc. Interestingly, with outdoor exposure, not only the conductance at short circuit, Gsc, increases but also the Gsc(Jsc)-dependence. This is well explained with an increase in voltage dependent charge carrier collection in CdTe.

Jordan, D; Kurtz, S.; Ulbrich, C.; Gerber, A.; Rau, U.

2014-03-01T23:59:59.000Z

445

19th European Photovoltaic Solar Energy Conference Pre-Print 4AV.1.45 QUANTUM EFFICIENCY OF CdTe SOLAR CELLS IN FORWARD BIAS  

E-Print Network [OSTI]

19th European Photovoltaic Solar Energy Conference Pre-Print 4AV.1.45 QUANTUM EFFICIENCY OF CdTe SOLAR CELLS IN FORWARD BIAS M. Gloeckler and J. R. Sites Department of Physics, Colorado State@lamar.colostate.edu ABSTRACT: When the quantum efficiency of a CdS/CdTe solar cell is measured under forward voltage

Sites, James R.

446

Electron and hole drift mobility measurements on thin film CdTe solar cells Qi Long, Steluta A. Dinca, E. A. Schiff, Ming Yu, and Jeremy Theil  

E-Print Network [OSTI]

(2004); 10.1063/1.1645322 Cathodoluminescence of Cu diffusion in CdTe thin films for CdTe/CdS solar://scitation.aip.org/content/aip/journal/apl/105/4?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Copper-doped Cd

Schiff, Eric A.

447

QUANTIFICATION OF LOSSES IN THIN-FILM CdS/CdTe SOLAR CELLS S.H. Demtsu and J.R. Sites  

E-Print Network [OSTI]

QUANTIFICATION OF LOSSES IN THIN-FILM CdS/CdTe SOLAR CELLS S.H. Demtsu and J.R. Sites Department of Physics, Colorado State University, Fort Collins, CO 80523, USA ABSTRACT Quantification of solar cell Thin-film CdS/CdTe devices have been studied extensively, but some basic underlying properties

Sites, James R.

448

Heterovalent substitutions in Na2M2TeO6 family: Crystal structure, fast sodium ion conduction and phase transition of Na2LiFeTeO6  

Science Journals Connector (OSTI)

Abstract A new solid electrolyte Na2LiFeTeO6 has been prepared by solid-state reactions in air at 700 °C and characterized by powder X-ray diffraction, redox titration and impedance measurements on ceramic samples. It is a new superstructure type of the well-known hexagonal layered P2 type with complete ordering of Li, Fe and Te in octahedral brucite-like layers: orthorhombic, P212121, a = 5.2109(1), b = 8.9791(2), c = 11.2389(2) Å, Z = 4. At room temperature, sodium ions in the interlayer gap are concentrated in two of the six non-equivalent trigonal prisms; at elevated temperatures, they exhibit high ionic conductivity, e.g., 4 S/m at 300 °C. Orthorhombic distortion decreases on heating, presumably due to sodium movement, and vanishes at ca. 400 °C giving rise to the hexagonal Na2Co2TeO6-type structure. Analogous Na2LiRTeO6 (R = Al or Ga), Na2LiFeWO6, Na2Mn2TeO6, Na2M2WO6 (M = Ni or Cu), Na2NiMSbO6 (M = Al or Fe) and Na2NiAlTO6 (T = Nb or Ta) could not be prepared.

V.B. Nalbandyan; ?.?. Petrenko; M.A. Evstigneeva

2013-01-01T23:59:59.000Z

449

Three-dimensional topological insulators Bi{sub 2}Te{sub 3}, Bi{sub 2}Se{sub 3}, and Bi{sub 2}Te{sub 2}Se - a microwave spectroscopy study  

SciTech Connect (OSTI)

We present results of investigations of three-dimensional topological insulators from a family of bismuth compounds performed in electron spin resonance spectrometer. Next to the standard spin resonance spectra in Bi{sub 2}Se{sub 3} originating from bulk conduction electrons (g{sub Verbar;} = 27.5 ± 0.1 and g{sub ?} = 19.5 ± 0.1), we observed also cyclotron resonance due to topological surface states in Bi{sub 2}Te{sub 3} and non-resonant signal related to weak anti-localization in Bi{sub 2}Te{sub 2}Se. The analysis of the cyclotron resonance signal yields low Fermi velocity equal to 3250 m/s in Bi{sub 2}Te{sub 3}. The phase coherence length determined from weak anti-localization signal equals to 550 nm at low temperatures in Bi{sub 2}Te{sub 2}Se. Relation of the signals to bulk, topological surface or two-dimensional quantum well states is discussed and where possible indicated.

Wolos, A. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland and Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland); Drabinska, A.; Szyszko, S.; Kaminska, M. [Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland); Strzelecka, S. G.; Hruban, A.; Materna, A.; Piersa, M. [Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warsaw (Poland)

2013-12-04T23:59:59.000Z

450

Superficies y Vacio 8, 85-88(1999) Sociedad Mexicana de Ciencias de Superficies y de Vaco. Optical and structural characterization of the heterostructure CdTe/GaAs  

E-Print Network [OSTI]

of the characterization of CdTe thin films grown by radio frequency sputtering employing GaAs substrates subject oxides on the properties of CdTe films. The three different chemical procedures were: (1) H2SO4+ H2SO4 for the usual values found for CdTe films grown by RF sputtering. From photoluminescence measurements we can say

Meléndez Lira, Miguel Angel

451

Microstructure and thermoelectric properties of p-type Bi{sub 0.5}Sb{sub 0.5}Te{sub 0.5} compounds fabricated by hot pressing and hot extrusion  

SciTech Connect (OSTI)

Bismuth telluride (Bi{sub 2}Te{sub 0.5}) compounds have been used as thermoelectric cooling and power conversion materials, since they have a high figure of merit at room temperature and can be fabricated easily and cost effectively. The crystal structure of Bi{sub 2}Te{sub 0.5} at room temperature is rhombohedral (a = 0.438 nm and c = 3.049 nm). This crystal structure is composed of atomic layers in the order of Te/Bi/Te/Te/Bi/Te/Bi/Te/Te/... along the c-axis. The Te/Te layers are considered to be weakly bound with van der Waals-like forces. The electrical and mechanical properties along the directions parallel to the cleavage planes are better than those along the c-axis. The distinct cleavage planes are perpendicular t the c-axis. Owing to the cleavage features, the crystal has poor mechanical properties and fabricating of miniature thermoelectric modules is difficult. Many attempts were made by sintering to fabricate miniature modules without cleavage. However, the sintering technique is not effective because the figure of merit of sintered compounds is lower than that of single crystals. In this work, the authors fabricated the p-type Te-doped Bi{sub 0.5}Sb{sub 0.5}Te{sub 0.5} compounds by both hot pressing and hot extrusion and then investigated the microstructure and thermoelectric properties of the compounds.

Seo, J.; Lee, D.; Lee, C. [Inha Univ., Inchon (Korea, Republic of). Dept. of Metallurgical Engineering] [Inha Univ., Inchon (Korea, Republic of). Dept. of Metallurgical Engineering; Park, K. [Chung-ju National Univ., Chungbuk (Korea, Republic of). Dept. of Materials Engineering] [Chung-ju National Univ., Chungbuk (Korea, Republic of). Dept. of Materials Engineering

1998-01-06T23:59:59.000Z

452

The GraduaTe school of educaTion newsleTTer | suMMer 2013 Project learn  

E-Print Network [OSTI]

The The GraduaTe school of educaTion newsleTTer | suMMer 2013 Project learn: Vision to Reality . . . One Project at a Time continued on page 3 f or the second year, Dr. Erin Washburn, from Project LEARN, along with the Windsor Central School District and the Liberty Partnership Program (LPP) at Binghamton

Suzuki, Masatsugu

453

A study of the back contacts on CdTe/CdS solar cells D.L. Batznera  

E-Print Network [OSTI]

Institute of Technology, ZuÃ?rich, Technoparkstr. 1, 8005 ZuÃ?rich, Switzerland b ANTEC GmbH, Industriestrasse 2-4, 65779 Kelkheim, Germany Abstract Conventional back contacts on CdTe/CdS solar cells layer thickness and stability issues have been studied. Different etchants not only clean the Cd

Romeo, Alessandro

454

Sublimation of GeTe Nanowires and Evidence of Its Size Effect Studied by in Situ TEM  

E-Print Network [OSTI]

. Phase-change material (PCM), commonly chalcogenides and most popularly Ge2Sb2Te5 (GST), exhibiting nanoscale devices to be operated at high temperatures such as phase change memory. Introduction Phase-change. Yim,, Bin Xiang,, and Junqiao Wu*,, Department of Materials Science and Engineering, Uni

Wu, Junqiao

455

Crystallization of Ge2Sb2Te5 nanometric phase change material clusters made by gas-phase condensation  

E-Print Network [OSTI]

Crystallization of Ge2Sb2Te5 nanometric phase change material clusters made by gas- phase=pdfcov Published by the AIP Publishing Articles you may be interested in Nanoscale nuclei in phase change materials phase change material clusters made by gas-phase condensation G. E. Ghezzi,1,2 R. Morel,3 A. Brenac,3 N

Paris-Sud XI, Université de

456

Modeling of 10 GeV-1 TeV laser-plasma accelerators using Lorentz boosted simulations  

E-Print Network [OSTI]

Modeling of 10 GeV-1 TeV laser-plasma accelerators using Lorentz boosted simulations J.-L. Vay,1,a-plasma wakefield accelerators in an optimal frame of reference [J.-L. Vay, Phys. Rev. Lett. 98, 130405 (2007 of plasma accelerators to very high energies and accurately models the laser evolution and the accelerated

Geddes, Cameron Guy Robinson

457

Conference on Transportation, Economics, Energy and the Environment (TE3 Hosted by the University of Michigan Energy Institute (UMEI)  

E-Print Network [OSTI]

) Gabriel E. Lade (UC Davis), C.-Y. Cynthia Lin (UC Davis), and Aaron Smith (UC Davis) "The Effect of PolicyConference on Transportation, Economics, Energy and the Environment (TE3 ) Hosted by the University of Michigan Energy Institute (UMEI) Rackham Amphitheatre, Ann Arbor, Michigan -- Friday, 3 October 2014 8

Daly, Samantha

458

Design and optimization of large area thin-film CdTe detector for radiation therapy imaging applications  

SciTech Connect (OSTI)

Purpose: The authors investigate performance of thin-film cadmium telluride (CdTe) in detecting high-energy (6 MV) x rays. The utilization of this material has become technologically feasible only in recent years due to significant development in large area photovoltaic applications. Methods: The CdTe film is combined with a metal plate, facilitating conversion of incoming photons into secondary electrons. The system modeling is based on the Monte Carlo simulations performed to determine the optimized CdTe layer thickness in combination with various converter materials. Results: The authors establish a range of optimal parameters producing the highest DQE due to energy absorption, as well as signal and noise spatial spreading. The authors also analyze the influence of the patient scatter on image formation for a set of detector configurations. The results of absorbed energy simulation are used in device operation modeling to predict the detector output signal. Finally, the authors verify modeling results experimentally for the lowest considered device thickness. Conclusions: The proposed CdTe-based large area thin-film detector has a potential of becoming an efficient low-cost electronic portal imaging device for radiation therapy applications.

Parsai, E. Ishmael; Shvydka, Diana; Kang, Jun [Department of Radiation Oncology, University of Toledo Health Sciences Campus, 3000 Arlington Avenue, Toledo, Ohio 43614 (United States); Department of Radiation Oncology, John Hopkins University, 401 N Broadway, Suite 1440, Baltimore, Maryland 21231 (United States)

2010-08-15T23:59:59.000Z

459

Inclusive Electroweak measurements in the muon channel with pp collisions at [the square root of] s=7 TeV  

E-Print Network [OSTI]

In this thesis, we perform the measurement of the production of W and Z bosons in proton-proton collisions at [the square root of]s = 7 TeV with the Large Hadron Collider (LHC). In the LHC, W and Z bosons are produced at ...

Harris, Philip Coleman

2011-01-01T23:59:59.000Z

460

Effect of Al(OH)3 on the hydrogen generation of aluminumewater system Hsin-Te Teng a  

E-Print Network [OSTI]

Effect of Al(OH)3 on the hydrogen generation of aluminumewater system Hsin-Te Teng a , To-Ying Lee effect of Al(OH)3 powders on Al/H2O system for hydrogen generation was demonstrated. crystalline Al(OH)3 powder acts an effective additive to the Al/H2O system.

Cao, Guozhong

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461

Light-Beam-Induced-Current Characterization of CdTe Solar Cells Russell M. Geisthardt and James R. Sites  

E-Print Network [OSTI]

Light-Beam-Induced-Current Characterization of CdTe Solar Cells Russell M. Geisthardt and James RTe solar cells. II. EXPERIMENTAL The LBIC system at CSU has been described in [1] and [2]. The light. Sites Colorado State University, Fort Collins, CO, 80523, USA Abstract--In this work, light

Sites, James R.

462

Search for the standard model Higgs boson decaying into two photons in pp collisions at ?s = 7 TeV  

E-Print Network [OSTI]

A search for a Higgs boson decaying into two photons is described. The analysis is performed using a dataset recorded by the CMS experiment at the LHC from pp collisions at a center-of-mass energy of 7 TeV, which corresponds ...

CMS Collaboration

463

Accelerated Short-TE 3D Proton Echo-Planar Spectroscopic Imaging Using 2D-SENSE with  

E-Print Network [OSTI]

Accelerated Short-TE 3D Proton Echo-Planar Spectroscopic Imaging Using 2D-SENSE with a 32-Channel times and 2D acceleration with a large array coil is expected to provide high acceleration capability using a 32-channel array coil can be accelerated 8-fold (R 4 2) along y-z to achieve a minimum

464

Absorption of Narrow-Gap HgCdTe Near the Band Edge Including Nonparabolicity and the Urbach Tail  

E-Print Network [OSTI]

Absorption of Narrow-Gap HgCdTe Near the Band Edge Including Nonparabolicity and the Urbach Tail, USA. 6.--e-mail: yonchang@uic.edu An analytical model describing the absorption behavior of Hg1-x. This model smoothly fits experimental absorption coefficients over energies ranging from the Urbach tail

Flatte, Michael E.

465

A Need-Based Collaboration Classification Framework Anita Sarma, Andr van der Hoek and Li-Te Cheng  

E-Print Network [OSTI]

1 A Need-Based Collaboration Classification Framework Anita Sarma, André van der Hoek and Li Irvine Irvine, CA 92697-3425 USA {asarma, andre}@ics.uci.edu IBM Research Collaborative User Experience Group 1 Rogers Street Cambridge, Massachusetts li-te_cheng@us.ibm.com Abstract Research in collaboration

Sarma, Anita

466

Appendix B: CArBon dioxide CApture teChnology SheetS  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

solvents solvents B-6 Pre-Combustion solvents u.s. DePartment of energy aDvanCeD Carbon DioxiDe CaPture r&D Program: teChnology uPDate, may 2013 Co 2 CaPture from igCC gas streams using aC-abC ProCess primary project goals SRI International is developing, for integrated gasification combined cycle (IGCC)-based power plants, a carbon dioxide (CO 2 ) capture technology based on the use of a high-ca- pacity and low-cost aqueous ammoniated solution containing ammonium carbonate (AC), which reacts with CO 2 to form ammonium bicarbonate (ABC).

467

Appendix B: CArBon dioxide CApture teChnology SheetS  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

solvents solvents B-198 Post-Combustion solvents u.s. DePartment of energy aDvanCeD Carbon DioxiDe CaPture r&D Program: teChnology uPDate, may 2013 DeveloPment anD Demonstration of Waste heat integration With solvent ProCess for more effiCient Co 2 removal from Coal-fireD flue gas primary project goals Southern Company Services is developing viable heat integration methods for the capture of carbon dioxide (CO 2 ) produced from pulverized coal (PC) combustion. The project will quantify energy-efficiency improvements to the CO 2 capture process by utilizing a waste heat recovery technology, High-Efficiency System (HES). technical goals * Reduction of the amount of extraction steam required for sensible heat load in the

468

Appendix B: CArBon dioxide CApture teChnology SheetS  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

sorbents sorbents B-302 Post-Combustion sorbents u.s. DePartment of energy aDvanCeD Carbon DioxiDe CaPture r&D Program: teChnology uPDate, may 2013 benCh-sCale DeveloPment anD testing of raPiD Pressure swing absorPtion for Carbon DioxiDe CaPture primary project goals WR Grace and the University of South Carolina are developing a rapid pressure swing adsorption (PSA) process to evaluate concept cost and performance benefits by testing a bench-scale system using a low-cost, structured adsorbent with low-pressure drop, high mass-transfer rates, high capacity, and high availability that will enable large feed through- puts. technical goals * Develop an attrition-resistant and low-pressure drop structured adsorbent based on a

469

Appendix B: CArBon dioxide CApture teChnology SheetS  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

membranes membranes B-370 Post-Combustion membranes u.s. DePartment of energy aDvanCeD Carbon DioxiDe CaPture r&D Program: teChnology uPDate, may 2013 eleCtroChemiCal membrane for Carbon DioxiDe CaPture & Power generation primary project goals FuelCell Energy, Inc. (FCE) is developing an electrochemical membrane (ECM)-based Combined Electric Power and Carbon Dioxide Separation (CEPACS) system for carbon dioxide (CO 2 ) capture that also provides additional electrical power generation. The project includes bench-scale testing of an 11.7 m 2 -area ECM (molten carbonate fuel cell) system for CO 2 capture, purification, and compression. technical goals * Perform contaminant effect testing to establish maximum permissible concentrations of

470

Ferro-Orbital Ordering Transition in Iron Telluride Fe1+yTe  

SciTech Connect (OSTI)

Fe1+yTe with y 0.05 exhibits a first-order phase transition on cooling to a state with a lowered structural symmetry, bicollinear antiferromagnetic order, and metallic conductivity, d /dT > 0. Here, we study samples with y = 0.09(1), where the frustration effects of the interstitial Fe decouple different orders, leading to a sequence of transitions. While the lattice distortion is closely followed by incommensurate magnetic order, the development of bicollinear order and metallic electronic coherence is uniquely associated with a separate hysteretic first-order transition, at a markedly lower temperature, to a phase with dramatically enhanced bond-order wave (BOW) order. The BOW state suggests ferro-orbital ordering, where electronic delocalization in ferromagnetic zigzag chains decreases local spin and results in metallic transport

Fobes, David [Brookhaven National Laboratory; Zalinznyak, I. [Brookhaven National Laboratory (BNL); Xu, Zhijun [Brookhaven National Laboratory (BNL); Zhong, Ruidan [Brookhaven National Laboratory (BNL); Gu, Genda [Brookhaven National Laboratory (BNL); Tranquada, John M. [Brookhaven National Laboratory (BNL); Harriger, Leland W. [NIST Center for Neutron Research (NCRN), Gaithersburg, MD; Singh, D. K. [University of Maryland and NIST; Garlea, Vasile O [ORNL; Lumsden, Mark D [ORNL; Winn, Barry L [ORNL

2014-01-01T23:59:59.000Z

471

Generation and recombination rates at ZnTe:O intermediate band states  

SciTech Connect (OSTI)

Carrier generation and recombination processes of ZnTeO thin films are studied by time-resolved photoluminescence, where carrier lifetimes at oxygen states and the conduction band are inferred to be >1??s and <100?ps, respectively. The radiative recombination coefficient for optical transitions from oxygen states to the valence band is extracted to be 1.2×10{sup ?10}?cm{sup 3}?sec{sup ?1} based on the excitation dependence of decay time constants. Rate equation analysis further suggests an increase in electron lifetime at the conduction band as oxygen states occupation is critical in achieving high conversion efficiency for solar cells based on multiphoton processes in these materials.

Wang, Weiming; Lin, Albert S.; Phillips, Jamie D.; Metzger, Wyatt K.

2009-01-01T23:59:59.000Z

472

Limits to Quantum Gravity Effects from Observations of TeV Flares in Active Galaxies  

E-Print Network [OSTI]

We have used data from the TeV gamma-ray flare associated with the active galaxy Markarian 421 observed on 15 May 1996 to place bounds on the possible energy-dependence of the speed of light in the context of an effective quantum gravitational energy scale. The possibility of an observable time dispersion in high energy radiation has recently received attention in the literature, with some suggestions that the relevant energy scale could be less than the Planck mass and perhaps as low as 10^16 GeV. The limits derived here indicate this energy scale to be in excess of 4x10^16 GeV at the 95% confidence level. To the best of our knowledge, this constitutes the first convincing limit on such phenomena in this energy regime.

S. D. Biller; A. C. Breslin; J. Buckley; M. Catanese; M. Carson; D. A. Carter-Lewis; M. F. Cawley; D. J. Fegan; J. Finley; J. A. Gaidos; A. M. Hillas; F. Krennrich; R. C. Lamb; R. Lessard; C. Masterson; J. E. McEnery; B. McKernan; P. Moriarty; J. Quinn; H. J. Rose; F. Samuelson; G. Sembroski; P. Skelton; T. C. Weekes

1998-10-13T23:59:59.000Z

473

Anomalously large spin susceptibility enhancement in n-doped CdMnTe quantum wells  

SciTech Connect (OSTI)

We report on time-resolved Kerr rotation (TRKR) experiments done on n-doped CdMnTe quantum wells (QWs), in the regime where strong coupling between the electron and the Mn spin-flip excitations shows up. It has been proposed previously to deduce the 2D electron gas spin susceptibility from the coupling energy between these spin excitations. Here we measure the coupling energy on a high mobility sample down to very low excitation density, and compare the results with spin-flip Raman scattering (SFRS) on the same sample. The electron spin polarizations measured by TRKR and SFRS are found in relatively good agreement. However the spin susceptibility measured by TRKR exceeds systematically the values predicted by many-body theory. This could be an indication that the two-oscillator model used to describe mixed electron-Mn spin excitations needs to be improved.

Ben Cheikh, Z. [Laboratoire Charles Coulomb, UMR 5221, Département Semi-conducteurs, Matériaux et Capteurs, Université Montpellier 2, France and Laboratoire de Physique des Matériaux: Structures et Propriétés, Faculté (Tunisia); Cronenberger, S.; Vladimirova, M.; Scalbert, D. [Laboratoire Charles Coulomb, UMR 5221, Departement Semi-conducteurs, Materiaux et Capteurs, Universite Montpellier 2 (France); Boujdaria, K. [Laboratoire de Physique des Matériaux: Structures et Propriétés, Faculté des Sciences de Bizerte, Université de Carthage, 7021 Zarzouna (Tunisia); Baboux, F.; Perez, F. [Institut des NanoSciences de Paris, CNRS/Université Paris 6, 4 place Jussieu, F-75005 Paris (France); Wojtowicz, T.; Karczewski, G. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland)

2013-12-04T23:59:59.000Z

474

Evidence of stress?mediated Hg migration in Hg1?x Cd x Te  

Science Journals Connector (OSTI)

Photoemission results from some ?110? cleaved surfaces of Hg1?x Cd x Te indicate that the Fermi level is pinned suggesting that while the bulk of the material is p type the area stressed during cleavage has been converted to n type. Electrolyte electroreflectance (EER) measurement confirmed the n?type character of the cleaved surface and showed that the alloy composition x at the surface after cleavage is high (x=0.22) compared to the bulk value (x=0.185). The high x value associated with the n character indicates that under stress the Hg migrates at least partially via the formation of donor defects. The defect density is reflected in the EER linewidth.

P. M. Raccah; U. Lee; J. A. Silberman; W. E. Spicer; J. A. Wilson

1983-01-01T23:59:59.000Z

475

Surface defect states in MBE-grown CdTe layers  

SciTech Connect (OSTI)

Semiconductor surface plays an important role in the technology of semiconductor devices. In the present work we report results of our deep-level transient spectroscopy (DLTS) investigations of surface defect states in nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. We observed a deep-level trap associated with surface states, with the activation energy for hole emission of 0.33 eV. DLTS peak position in the spectra for this trap, and its ionization energy, strongly depend on the electric field. Our measurements allow to determine a mechanism responsible for the enhancement of hole emission rate from the traps as the phonon-assisted tunnel effect. Density of surface defect states significantly decreased as a result of passivation in ammonium sulfide. Capacitance-voltage measurements confirmed the results obtained by the DLTS technique.

Olender, Karolina; Wosinski, Tadeusz; Fronc, Krzysztof; Tkaczyk, Zbigniew; Chusnutdinow, Sergij; Karczewski, Grzegorz [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland)

2014-02-21T23:59:59.000Z

476

Performance Stabilization of CdTe PV Modules using Bias and Light  

SciTech Connect (OSTI)

Reversible performance changes due to light exposure frustrate repeatable performance measurements on CdTe PV modules. It is common to use extended light-exposure to ensure that measurements are representative of outdoor performance. We quantify the extent to which such a light-exposed state depends on module temperature and consider bias in the dark to aid in stabilization. We evaluate the use of dark forward bias to bring about a performance state equivalent to that obtained with light exposure, and to maintain a light-exposed state prior to STC performance measurement. Our results indicate that the most promising method for measuring a light-exposed state is to use light exposure at controlled temperature followed by prompt STC measurement with a repeatable time interval between exposure and the STC measurement.

Silverman, T. J.; Deceglie, M. G.; Marion, B.; Kurtz, S. R.

2014-07-01T23:59:59.000Z

477

Muon Detection of TeV Gamma Rays from Gamma-Ray Bursts  

Science Journals Connector (OSTI)

Because of the limited size of the satellite-borne instruments, it has not been possible to observe the flux of gamma-ray bursts (GRBs) beyond GeV energy. We here show that it is possible to detect the GRB radiation of TeV energy and above by detecting the muon secondaries produced when the gamma rays shower in Earth's atmosphere. Observation is made possible by the recent commissioning of underground detectors (AMANDA, the Lake Baikal detector, and MILAGRO), which combine a low muon threshold of a few hundred GeV or less, with a large effective area of 103 m2 or more. Observations will not only provide new insights in the origin and characteristics of GRB, but they also will provide quantitative information on the diffuse infrared background.

J. Alvarez-Muñiz; F. Halzen

1999-01-01T23:59:59.000Z

478

Soft QCD Measurements at 900 GeV and 7 TeV with ATLAS  

E-Print Network [OSTI]

We present results on charged hadron production in proton-proton collisions at the Large Hadron Collider and center of mass energies ps = 900 GeV and 7 TeV in the ATLAS Detector. Charged tracks are measured with high precision in the inner tracking system; track multiplicities, transverse momentum spectrum and the average track transverse momentum as a function of track multiplicity are compared to phenomenological models describing the soft QCD processes participating in the interaction. Although all models approximately describe the data, none show complete agreement, with the deviation between data and Monte Carlo becoming more significant at the the higher center of mass energy and for higher track transverse momentum. These data have been used in the determination of a new optimised model which provides a much improved description of the data.

Proudfoot, J; The ATLAS collaboration

2010-01-01T23:59:59.000Z

479

TeV Gamma-rays from the Northern Sky Pulsar Wind Nebulae  

E-Print Network [OSTI]

We estimate the TeV gamma-ray fluxes expected from the population of young pulsars in terms of the self-consistent time dependent hadronic-leptonic model for the high energy processes inside the pulsar wind nebulae. This radiation model bases on the hypothesis of Arons and collaborators who postulate that leptons are accelerated inside the nebulae as a result of resonant scattering on heavy nuclei, which in turn are accelerated in the pulsar wind region or the pulsar inner magnetosphere. Our aim is to find out which nebulae on the nortehrn hemisphere are the best candidates for detection at energies above 60 GeV and 200 GeV by the next generation of low threshold Cherenkov telescopes.

W. Bednarek; M. Bartosik

2005-09-29T23:59:59.000Z

480

Probing color coherence effects in pp collisions at sqrt(s) = 7 TeV  

E-Print Network [OSTI]

A study of color coherence effects in pp collisions at a center-of-mass energy of 7 TeV is presented. The data used in the analysis were collected in 2010 with the CMS detector at the LHC and correspond to an integrated luminosity of 36 inverse picobarns. Events are selected that contain at least three jets and where the two jets with the largest transverse momentum exhibit a back-to-back topology. The measured angular correlation between the second- and third-leading jet is shown to be sensitive to color coherence effects, and is compared to the predictions of Monte Carlo models with various implementations of color coherence. None of the models describe the data satisfactorily.

CMS Collaboration

2013-11-22T23:59:59.000Z

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481

Evidence for charge Kondo effect in superconducting Tl-doped PbTe  

SciTech Connect (OSTI)

We report results of low-temperature thermodynamic and transport measurements of Pb{sub 1-x}Tl{sub x}Te single crystals for Tl concentrations up to the solubility limit of approximately x = 1.5%. For all doped samples, we observe a low-temperature resistivity upturn that scales in magnitude with the Tl concentration. The temperature and field dependence of this upturn are consistent with a charge Kondo effect involving degenerate Tl valence states differing by two electrons, with a characteristic Kondo temperature T{sub K} {approx} 6 K. The observation of such an effect supports an electronic pairing mechanism for superconductivity in this material and may account for the anomalously high T{sub c} values.

Fisher, I

2010-01-11T23:59:59.000Z

482

Polarimetric performance of a Laue lens gamma-ray CdZnTe focal plane prototype  

SciTech Connect (OSTI)

A gamma-ray telescope mission concept [gamma ray imager (GRI)] based on Laue focusing techniques has been proposed in reply to the European Space Agency call for mission ideas within the framework of the next decade planning (Cosmic Vision 2015-2025). In order to optimize the design of a focal plane for this satellite mission, a CdZnTe detector prototype has been tested at the European Synchrotron Radiation Facility under an {approx}100% polarized gamma-ray beam. The spectroscopic, imaging, and timing performances were studied and in particular its potential as a polarimeter was evaluated. Polarization has been recognized as being a very important observational parameter in high energy astrophysics (>100 keV) and therefore this capability has been specifically included as part of the GRI mission proposal. The prototype detector tested was a 5 mm thick CdZnTe array with an 11x11 active pixel matrix (pixel area of 2.5x2.5 mm{sup 2}). The detector was irradiated by a monochromatic linearly polarized beam with a spot diameter of about 0.5 mm over the energy range between 150 and 750 keV. Polarimetric Q factors of 0.35 and double event relative detection efficiency of 20% were obtained. Further measurements were performed with a copper Laue monochromator crystal placed between the beam and the detector prototype. In this configuration we have demonstrated that a polarized beam does not change its polarization level and direction after undergoing a small angle (<1 deg.) Laue diffraction inside a crystal.

Curado da Silva, R. M. [Departmento de Fisica, Universidade de Coimbra, P-3000 Coimbra (Portugal); Center for Space Radiations, Univesite Catholique de Louvain (Belgium); Caroli, E.; Stephen, J. B.; Schiavone, F.; Donati, A.; Ventura, G. [Istituto di Astrofisica Spaziale e Fisica Cosmica-Bologna, Via Gobetti 101, I-40129 Bologna (Italy); Pisa, A.; Auricchio, N.; Frontera, F. [Dipartimento di Fisica, Universita di Ferrara, Ferrara (Italy); Del Sordo, S. [Istituto di Astrofisica Spaziale e Fisica Cosmica-Palermo, Via Ugo La Malfa 153, 90146 Palermo (Italy); Honkimaeki, V. [European Synchrotron Radiation Facility, Grenoble (France); Trindade, A. M. F. [Departmento de Fisica, Universidade de Coimbra, P-3000 Coimbra (Portugal)

2008-10-15T23:59:59.000Z

483

Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures  

SciTech Connect (OSTI)

Effect of irradiation with {gamma}-ray photons on the mechanism of charge transport in an n-CdS/p-CdTe heterostructure is considered. It is shown that the forward current-voltage characteristic of an n-CdS/p-CdTe heterostructure before and after irradiation is described by two exponential dependences: I = I{sub 01}exp(qV/C{sub 01}kT) and I = I{sub 02}exp(qV/C{sub 02}kT). It is found that, in the first portion of the current-voltage characteristic, the current is limited by thermoelectronic emission while, in the second portion, the current is limited by recombination of nonequilibrium charge carriers in the electrically neutral portion of a CdTe{sub 1-x}S{sub x} alloy at the n-CdS/p-CdTe heteroboundary. Anomalous dose dependences of parameters of the n-CdS/p-CdTe heterosystem are attributed to a variation in the degree of compensation of local centers at the CdS-CdTe{sub 1-x}S{sub x} interface and in the CdTe{sub 1-x}S{sub x} layers in relation to the dose of irradiation with {gamma}-ray photons.

Muzafarova, S. A., E-mail: samusu@rambler.ru; Mirsagatov, S. A., E-mail: mirsagatov@rambler.ru; Dzhamalov, F. N. [Academy of Sciences of the Republic of Uzbekistan, Physicotechnical Institute, Researh-and-Production Association Sun Physics (Uzbekistan)

2009-02-15T23:59:59.000Z

484

Deposition and characterization of Cd{sub 1?x}Mg{sub x}Te thin films grown by a novel cosublimation method  

SciTech Connect (OSTI)

Photovoltaic cells utilizing the CdS/CdTe structure have improved substantially in the past few years. Despite the recent advances, the efficiency of CdS/CdTe cells is still significantly below their Shockley–Queisser limit. CdTe based ternary alloy thin films, such as Cd{sub 1?x}Mg{sub x}Te (CMT), could be used to improve efficiency of CdS/CdTe photovoltaic cells. Higher band gap Cd{sub 1?x}Mg{sub x}Te films can be the absorber in top cells of a tandem structure or an electron reflector layer in CdS/CdTe cells. A novel cosublimation method to deposit CMT thin films has been developed. This method can deposit CMT films of band gaps ranging from 1.5 to 2.3?eV. The cosublimation method is fast, repeatable, and scalable for large areas, making it suitable for implementing into large-scale manufacturing. Characterization of as-deposited CMT films, with x varying from 0 to 0.35, reveals a linear relationship between Mg content measured by energy dispersive x-ray spectroscopy and the optical band gap. Glancing angle x-ray diffraction (GAXRD) measurements of Cd{sub 1?x}Mg{sub x}Te films show a zinc-blende structure similar to CdTe. Furthermore, increasing Mg content decreases the lattice parameter and the grain size. GAXRD shows the films are under mild tension after deposition.

Kobyakov, Pavel S., E-mail: pskobyak@rams.colostate.edu; Swanson, Drew E.; Sampath, Walajabad S. [Department of Mechanical Engineering, Colorado State University, 1374 Campus Delivery, Fort Collins, Colorado 80523 (United States); Moore, Andrew; Raguse, John M. [Department of Physics, Colorado State University, 1875 Campus Delivery, Fort Collins, Colorado 80523 (United States)

2014-03-15T23:59:59.000Z

485

Acceptor and donor production in Hg b1 s[subscript -x]Cd[subscript x]Te by neutron transmutation doping  

E-Print Network [OSTI]

remains constant during the irradiation, 4. The dopant or oduced i'rom the decay of the pr oduct isot. ope is stable, 5. The effect of bur nup of the product isotopes and the dopants is negligible. With these assumptions and approximations one has... amounts such as Te and Te, and with products arri tting gamma rays with approximately the same ener gy, theoretical methods wer e developed for deter mining acceptor and donor production levels in Hg& xCdxTe based on the simultaneous irradiation of a...

Seager, Kevin Douglas

1985-01-01T23:59:59.000Z

486

Review of Andreja Markovi?, et al., Slovenska beseda v živo: u?benik za za?etni te?aj slovenš?ine kot drugega/tujega jezika; Andreja Markovi?, et al., S slovenš?ino nimam težav: u?benik za kratke te?aje slovenš?ine: nadaljevalna stopnja; Nataša Pirih Svetina, Andreja Ponikvar. A, B, C . . . 1, 2, 3, gremo . . . U?benik za za?etnike na kratkih te?ajih slovenš?ine kot drugega/tujega jezika  

E-Print Network [OSTI]

REVIEWS 107 Andreja Markovi?, Danuša Škapin, Katarina Rigler Šilc, Špela Kaji? Kmeti?. Slovenska beseda v živo: u?benik za za?etni te?aj slovenš?ine kot drugega/tujega jezika. Third edition. Ljubljana: Center za slovenš?ino kot drugi/tuji jezik pri... Oddelku za slovenistiko Filozofske fakultete, 2002 [3rd edition]. 211 pp., €29.53 [= $38.46] (paper). ISBN: 961-6200-80-1. Andreja Markovi?, Vesna Halužan, Mateja Pezdirc Bartol, Danuša Škapin, Gita Vuga. S slovenš?ino nimam težav: u?benik za kratke te?aje...

Pirnat-Greenberg, Marta

2007-01-01T23:59:59.000Z

487

Optical-Fiber-Based, Time-Resolved Photoluminescence Spectrometer for Thin-Film Absorber Characterization and Analysis of TRPL Data for CdS/CdTe Interface: Preprint  

SciTech Connect (OSTI)

We describe the design of a time resolved photoluminescence (TRPL) spectrometer for rapid semiconductor absorber characterization. Simplicity and flexibility is achieved by using single optical fiber to deliver laser pulses and to collect photoluminescence. We apply TRPL for characterization of CdS/CdTe absorbers after deposition, CdCl2 treatment, Cu doping, and back contact formation. Data suggest this method could be applied in various stages of PV device processing. Finally, we show how to analyze TRPL data for CdS/CdTe absorbers by considering laser light absorption depth and intermixing at CdS/CdTe interface.

Kuciauskas, D.; Duenow, J. N.; Kanevce, A.; Li, J. V.; Young, M. R.; Dippo, P.; Levi, D. H.

2012-06-01T23:59:59.000Z

488

Comparison of crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te nanocrystalline thin films: Effects of homogeneous irradiation with an electron beam  

SciTech Connect (OSTI)

The effects of homogenous electron beam (EB) irradiation on the crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te thin films were investigated. Both types of thin films were prepared by flash evaporation, after which homogeneous EB irradiation was performed at an acceleration voltage of 0.17?MeV. For the n-type thin films, nanodots with a diameter of less than 10?nm were observed on the surface of rice-like nanostructures, and crystallization and crystal orientation were improved by EB irradiation. The resulting enhancement of mobility led to increased electrical conductivity and thermoelectric power factor for the n-type thin films. In contrast, the crystallization and crystal orientation of the p-type thin films were not influenced by EB irradiation. The carrier concentration increased and mobility decreased with increased EB irradiation dose, possibly because of the generation of defects. As a result, the thermoelectric power factor of p-type thin films was not improved by EB irradiation. The different crystallization behavior of the n-type and p-type thin films is attributed to atomic rearrangement during EB irradiation. Selenium in the n-type thin films is more likely to undergo atomic rearrangement than the other atoms present, so only the crystallinity of the n-type Bi-Se-Te thin films was enhanced.

Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp; Imai, Kazuo; Uyama, Masato; Nishi, Yoshitake [Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Hagino, Harutoshi; Miyazaki, Koji [Department of Mechanical and Control Engineering, Kyushu Institute of Technology, 1-1 Sensui, Tobata-ku, Kitakyushu 804-8550 (Japan); Tanaka, Saburo [Department of Mechanical Engineering, College of Engineering, Nihon University, Nakagawara, Tokusada, Tamuramachi, Koriyama, Fukushima 963-8642 (Japan)

2014-06-07T23:59:59.000Z

489

On the Energy Spectra of GeV/TeV Cosmic Ray Leptons  

SciTech Connect (OSTI)

Recent observations of cosmic ray electrons from several instruments have revealed various degrees of deviation in the measured electron energy distribution from a simple power-law, in a form of an excess around 0.1 to 1 TeV energies. An even more prominent deviation and excess has been observed in the fraction of cosmic ray positrons around 10 and 100 GeV energies. These observations have received considerable attention and many theoretical models have been proposed to explain them. The models rely on either dark matter annihilation/decay or specific nearby astrophysical sources, and involve several additional assumptions regarding the dark matter distribution or particle acceleration. In this paper we show that the observed excesses in the electron spectrum may be easily reproduced without invoking any unusual sources other than the general diffuse Galactic components of cosmic rays. The model presented here assumes a power-law injection of electrons (and protons) by supernova remnants, and evaluates their expected energy spectrum based on a simple kinetic equation describing the propagation of charged particles in the interstellar medium. The primary physical effect involved is the Klein-Nishina suppression of the electron cooling rate around TeV energies. With a very reasonable choice of the model parameters characterizing the local interstellar medium, we can reproduce the most recent observations by Fermi and HESS experiments. Interestingly, in our model the injection spectral index of cosmic ray electrons becomes comparable to, or even equal to that of cosmic ray protons. The Klein-Nishina effect may also affect the propagation of the secondary e{sup {+-}} pairs, and therefore modify the cosmic ray positron-to-electron ratio. We have explored this possibility by considering two mechanisms for production of e{sup {+-}} pairs within the Galaxy. The first is due to the decay of {pi}{sup {+-}}'s produced by interaction of cosmic ray nuclei with ambient protons. The second source discussed here is due to the annihilation of the diffuse Galactic {gamma}-rays on the stellar photon field. We find that high positron fraction increasing with energy, as claimed by the PAMELA experiment, cannot be explained in our model with the conservative set of the model parameters. We are able, however, to reproduce the PAMELA (as well as Fermi and HESS) results assuming high values of the starlight and interstellar gas densities, which would be more appropriate for vicinities of supernova remnants. A possible solution to this problem may be that cosmic rays undergo most of their interactions near their sources due to the efficient trapping in the far upstream of supernova shocks by self-generated, cosmic ray-driven turbulence.

Stawarz, Lukasz; /KIPAC, Menlo Park /Jagiellonian U., Astron. Observ.; Petrosian, Vahe; /KIPAC, Menlo Park /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept.; Blandford, Roger D.; /KIPAC, Menlo Park

2011-08-19T23:59:59.000Z

490

X-ray diffraction study of (TlInSe{sub 2}){sub 1-x}(TlGaTe{sub 2}){sub x} crystal system  

SciTech Connect (OSTI)

The crystallographic and dynamic characteristics of TlInSe{sub 2} and TlGaTe{sub 2} crystals have been studied by X-ray diffraction in the temperature range of 85-320 K. The temperature dependences of the unit-cell parameters a of TlInSe{sub 2} and TlGaTe{sub 2} crystals, as well as their coefficients of thermal expansion along the [100] direction, are determined. The concentration dependences of the unit-cell parameters a and c for (TlInSe{sub 2}){sub 1-x}(TlGaTe{sub 2}){sub x} crystals are measured. Anomalies are found in the temperature dependences of the unit-cell parameters a and, correspondingly, the coefficient of thermal expansion, indicating the existence of phase transitions in TlInSe{sub 2} and TlGaTe{sub 2} crystals.

Sheleg, A. U., E-mail: sheleg@ifttp.bas-net.by; Zub, E. M.; Yachkovskii, A. Ya. [National Academy of Sciences of Belarus, State Scientific and Production Association, Scientific and Practical Materials Research Center (Belarus); Mustafaeva, S. N.; Kerimova, E. M. [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan)

2012-03-15T23:59:59.000Z

491

Gentili utenti, nel periodo tra il 6 ed il 14 aprile il Servizio TeDOC si sposta all'edificio 16 (ex-officina Mauro  

E-Print Network [OSTI]

(ex-officina Mauro dietro la Nave) dove fornirà un servizio integrato con le strutture bibliotecarie del TeDOC riapriranno presso la nuova sede edificio 16 (ex officina mauro) Le collezioni cartacee

492

SHG of CO2 Laser Radiation at 10.6 µm in the Highly Nonlinear Chalcopyrite LiGaTe2  

Science Journals Connector (OSTI)

Type-I phase-matching for second harmonic generation at 10.6 µm in LiGaTe2 is demonstrated and the effective nonlinearity (34.5 pm/V) for this process is estimated by...

Zondy, Jean-Jacques; Bielsa, Franck; Douillet, Albane; Hilico, Laurent; Acef, Ouali; Petrov, Valentin; Yelisseyev, Alexander; Isaenko, Ludmila; Krinitsin, Pavel

493

Small-sized Mach-Zehnder Interferometer Optical Switch Using Thin Film Ge2Sb2Te5 Phase-change Material  

Science Journals Connector (OSTI)

Small-sized Mach-Zehnder Interferometer optical switch using Ge2Sb2Te5 thin films was fabricated. Two thin films of 1-?m-square were sufficient for switching. The switching...

Moriyama, Takumi; Kawashima, Hitoshi; Kuwahara, Masashi; Wang, Xiaomin; Asakura, Hideaki; Tsuda, Hiroyuki

494

Measurements of fiducial and differential cross sections for Higgs boson production in the diphoton decay channel at ?s = 8 TeV with ATLAS  

E-Print Network [OSTI]

Measurements of fiducial and differential cross sections are presented for Higgs boson production in proton-proton collisions at a centre-of-mass energy of ?s = 8 TeV. The analysis is performed in the H ? ?? decay channel ...

Taylor, Frank E.

495