National Library of Energy BETA

Sample records for rx bandwidth switch

  1. Measuring and Understanding Memory Bandwidth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Measuring and Understanding Memory Bandwidth Measuring and Understanding Memory Bandwidth Measuring Bandwidth Usage Measuring memory bandwidth is a good way of understanding how...

  2. Bandwidth and Transfer Activity

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Activity Bandwidth and Transfer Activity Data Rate vs. File Size The graph below shows the bandwidth for individual file transfers for one day. The graph also gives a quick overview of the traffic and maximum bandwidth and file size for a given day. Historical yearly peak days. Daily Rate vs. Size Aggregate Transfer Bandwidth This graph shows the aggregate transfer rate to the storage systems as a function of time of day. The red line is the peak bandwidth observed within each one minute

  3. Chemical Industry Bandwidth Study

    SciTech Connect (OSTI)

    none,

    2006-12-01

    The Chemical Bandwidth Study provides a snapshot of potentially recoverable energy losses during chemical manufacturing. The advantage of this study is the use of "exergy" analysis as a tool for pinpointing inefficiencies.

  4. Bandwidth Historical Peak Days

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bandwidth Historical Peak Days Bandwidth Historical Peak Days These plots show yearly peak days from 2000 to the present. BE CAREFUL because the graphs are autoscaling - check the scales on each axis before you compare graphs. Note that the graph for current year shows the data for the year-to-date peak. Transfer Rate vs. Size Transfer Rate vs. Size Transfer Rate vs. Size Transfer Rate vs. Size Transfer Rate vs. Size Transfer Rate vs. Size Transfer Rate vs. Size Transfer Rate vs. Size Transfer

  5. Low-bandwidth authentication.

    SciTech Connect (OSTI)

    Donnelly, Patrick Joseph; McIver, Lauren; Gaines, Brian R.; Anderson, Erik; Collins, Michael Joseph; Thomas,Kurt Adam; McDaniel, Austin

    2007-09-01

    Remotely-fielded unattended sensor networks generally must operate at very low power--in the milliwatt or microwatt range--and thus have extremely limited communications bandwidth. Such sensors might be asleep most of the time to conserve power, waking only occasionally to transmit a few bits. RFID tags for tracking or material control have similarly tight bandwidth constraints, and emerging nanotechnology devices will be even more limited. Since transmitted data is subject to spoofing, and since sensors might be located in uncontrolled environments vulnerable to physical tampering, the high-consequence data generated by such systems must be protected by cryptographically sound authentication mechanisms; but such mechanisms are often lacking in current sensor networks. One reason for this undesirable situation is that standard authentication methods become impractical or impossible when bandwidth is severely constrained; if messages are small, a standard digital signature or HMAC will be many times larger than the message itself, yet it might be possible to spare only a few extra bits per message for security. Furthermore, the authentication tags themselves are only one part of cryptographic overhead, as key management functions (distributing, changing, and revoking keys) consume still more bandwidth. To address this problem, we have developed algorithms that provide secure authentication while adding very little communication overhead. Such techniques will make it possible to add strong cryptographic guarantees of data integrity to a much wider range of systems.

  6. Measuring and Understanding Memory Bandwidth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Measuring and Understanding Memory Bandwidth Measuring and Understanding Memory Bandwidth Measuring Bandwidth Usage Measuring memory bandwidth is a good way of understanding how well your application uses cache memory. Today's processors are constructed under the assumption that a small amount of (expensive) fast memory - called "cache" - is used more often than a larger amount of slower memory (DRAM). The extent to which this assumption applies to your code is referred to as memory

  7. Bandwidth Study U.S. Chemical Manufacturing

    Broader source: Energy.gov [DOE]

    Energy bandwidth studies of U.S. manufacturing sectors can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities. This bandwidth study...

  8. Bandwidth Study U.S. Petroleum Refining

    Broader source: Energy.gov [DOE]

    Energy bandwidth studies of U.S. manufacturing sectors can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities. This bandwidth study...

  9. Network Bandwidth Utilization Forecast Model on High Bandwidth Network

    SciTech Connect (OSTI)

    Yoo, Wucherl; Sim, Alex

    2014-07-07

    With the increasing number of geographically distributed scientific collaborations and the scale of the data size growth, it has become more challenging for users to achieve the best possible network performance on a shared network. We have developed a forecast model to predict expected bandwidth utilization for high-bandwidth wide area network. The forecast model can improve the efficiency of resource utilization and scheduling data movements on high-bandwidth network to accommodate ever increasing data volume for large-scale scientific data applications. Univariate model is developed with STL and ARIMA on SNMP path utilization data. Compared with traditional approach such as Box-Jenkins methodology, our forecast model reduces computation time by 83.2percent. It also shows resilience against abrupt network usage change. The accuracy of the forecast model is within the standard deviation of the monitored measurements.

  10. Steel Industry Energy Bandwidth Study

    SciTech Connect (OSTI)

    none,

    2004-10-01

    ITP conducted a study on energy use and potential savings, or "bandwidth" study, in major steelmaking processes. Intended to provide a realistic estimate of the potential amount of energy that can be saved in an industrial process, the "bandwidth" refers to the difference between the amount of energy that would be consumed in a process using commercially available technology versus the minimum amount of energy needed to achieve those same results based on the 2nd law of thermodynamics. The Steel Industry Energy Bandwidth Study (PDF133 KB) also estimates steel industry energy use in the year 2010, and uses that value as a basis for comparison against the minimum requirements. This energy savings opportunity for 2010 will aid focus on longer term R&D.

  11. Mining Industry Energy Bandwidth Study

    SciTech Connect (OSTI)

    none,

    2007-07-01

    The Industrial Technologies Program (ITP) relies on analytical studies to identify large energy reduction opportunities in energy-intensive industries and uses these results to guide its R&D portfolio. The energy bandwidth illustrates the total energy-saving opportunity that exists in the industry if the current processes are improved by implementing more energy-efficient practices and by using advanced technologies. This bandwidth analysis report was conducted to assist the ITP Mining R&D program in identifying energy-saving opportunities in coal, metals, and mineral mining. These opportunities were analyzed in key mining processes of blasting, dewatering, drilling, digging, ventilation, materials handling, crushing, grinding, and separations.

  12. Long-pulse-width narrow-bandwidth solid state laser

    DOE Patents [OSTI]

    Dane, C. Brent; Hackel, Lloyd A.

    1997-01-01

    A long pulse laser system emits 500-1000 ns quasi-rectangular pulses at 527 nm with near diffraction-limited divergence and near transform-limited bandwidth. The system consists of one or more flashlamp-pumped Nd:glass zig-zag amplifiers, a very low threshold stimulated-Brillouin-scattering (SBS) phase conjugator system, and a free-running single frequency Nd:YLF master oscillator. Completely passive polarization switching provides eight amplifier gain passes. Multiple frequency output can be generated by using SBS cells having different pressures of a gaseous SBS medium or different SBS materials. This long pulse, low divergence, narrow-bandwidth, multi-frequency output laser system is ideally suited for use as an illuminator for long range speckle imaging applications. Because of its high average power and high beam quality, this system has application in any process which would benefit from a long pulse format, including material processing and medical applications.

  13. Long-pulse-width narrow-bandwidth solid state laser

    DOE Patents [OSTI]

    Dane, C.B.; Hackel, L.A.

    1997-11-18

    A long pulse laser system emits 500-1000 ns quasi-rectangular pulses at 527 nm with near diffraction-limited divergence and near transform-limited bandwidth. The system consists of one or more flashlamp-pumped Nd:glass zig-zag amplifiers, a very low threshold stimulated-Brillouin-scattering (SBS) phase conjugator system, and a free-running single frequency Nd:YLF master oscillator. Completely passive polarization switching provides eight amplifier gain passes. Multiple frequency output can be generated by using SBS cells having different pressures of a gaseous SBS medium or different SBS materials. This long pulse, low divergence, narrow-bandwidth, multi-frequency output laser system is ideally suited for use as an illuminator for long range speckle imaging applications. Because of its high average power and high beam quality, this system has application in any process which would benefit from a long pulse format, including material processing and medical applications. 5 figs.

  14. ITP Petroleum Refining: Energy Bandwidth for Petroleum Refining...

    Office of Environmental Management (EM)

    Energy Bandwidth for Petroleum Refining Processes ITP Petroleum Refining: Energy Bandwidth for Petroleum Refining Processes PDF icon bandwidth.pdf More Documents & Publications ITP ...

  15. Bandwidth Study U.S. Pulp and Paper Manufacturing

    Broader source: Energy.gov [DOE]

    Energy bandwidth studies of U.S. manufacturing sectors can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities. This bandwidth study...

  16. Bandwidth Study U.S. Iron and Steel Manufacturing

    Broader source: Energy.gov [DOE]

    Energy bandwidth studies of U.S. manufacturing sectors can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities. This bandwidth study...

  17. Energy Bandwidth for Petroleum Refining Processes

    SciTech Connect (OSTI)

    none,

    2006-10-01

    The petroleum refining energy bandwidth report analyzes the most energy-intensive unit operations used in U.S. refineries: crude oil distillation, fluid catalytic cracking, catalytic hydrotreating, catalytic reforming, and alkylation. The "bandwidth" provides a snapshot of the energy losses that can potentially be recovered through best practices and technology R&D.

  18. L3:AMA.RX.P4.01 Hongbin Zhang INL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AMA.RX.P4.01 Hongbin Zhang INL Completed: 1/31/12 CASL-U-2012-0011-000 Consortium for Advanced Simulation of LWRs CASL-U-2012-0011-000 Power Uprate Limitation Assessment Milestone Deliverable - AMA.RX.P4.01 1 Introduction This is a follow-on task of an AMA Level 3 milestone (AMA.RX.P3.01) delivered during POR- 3 to further assess the LWR power uprate limitations and align CASL work to facilitate additional power uprates. A power uprate workshop was held at ORNL in September 2011. A comprehensive

  19. Bandwidth Study U.S. Magnesium Manufacturing, Draft

    Broader source: Energy.gov [DOE]

    Energy bandwidth studies can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities in manufacturing. This bandwidth study is one of a series...

  20. Bandwidth Study U.S. Magnesium Manufacturing, Dra

    Broader source: Energy.gov [DOE]

    Energy bandwidth studies can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities in manufacturing. This bandwidth study is one of a series...

  1. Switch wear leveling

    DOE Patents [OSTI]

    Wu, Hunter; Sealy, Kylee; Gilchrist, Aaron

    2015-09-01

    An apparatus for switch wear leveling includes a switching module that controls switching for two or more pairs of switches in a switching power converter. The switching module controls switches based on a duty cycle control technique and closes and opens each switch in a switching sequence. The pairs of switches connect to a positive and negative terminal of a DC voltage source. For a first switching sequence a first switch of a pair of switches has a higher switching power loss than a second switch of the pair of switches. The apparatus includes a switch rotation module that changes the switching sequence of the two or more pairs of switches from the first switching sequence to a second switching sequence. The second switch of a pair of switches has a higher switching power loss than the first switch of the pair of switches during the second switching sequence.

  2. Bandwidth Study U.S. Glass Fiber Reinforced Polymer Manufacturing...

    Broader source: Energy.gov (indexed) [DOE]

    This bandwidth study is one of a series of six energy bandwidth studies on manufacturing lightweight structural materials. The study examines energy consumption and potential ...

  3. Bandwidth Study U.S. Carbon Fiber Reinforced Polymer Manufacturing...

    Broader source: Energy.gov (indexed) [DOE]

    This bandwidth study is one of a series of six energy bandwidth studies on manufacturing lightweight structural materials. The study examines energy consumption and potential ...

  4. ITP Glass: Industrial Glass Bandwidth Analysis Final Report,...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Industrial Glass Bandwidth Analysis Final Report, August 2007 ITP Glass: Industrial Glass Bandwidth Analysis Final Report, August 2007 industrialbandwidth.pdf More Documents &...

  5. Optical switches and switching methods

    DOE Patents [OSTI]

    Doty, Michael

    2008-03-04

    A device and method for collecting subject responses, particularly during magnetic imaging experiments and testing using a method such as functional MRI. The device comprises a non-metallic input device which is coupled via fiber optic cables to a computer or other data collection device. One or more optical switches transmit the subject's responses. The input device keeps the subject's fingers comfortably aligned with the switches by partially immobilizing the forearm, wrist, and/or hand of the subject. Also a robust nonmetallic switch, particularly for use with the input device and methods for optical switching.

  6. Bandwidth Study U.S. Petroleum Refining | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Petroleum Refining Bandwidth Study U.S. Petroleum Refining Bandwidth Study U.S. Petroleum Refining Energy bandwidth studies of U.S. manufacturing sectors can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities. This bandwidth study examines energy consumption and potential energy savings opportunities in U.S. petroleum refining. The study relies on multiple sources to estimate the energy used in nine individual process areas,

  7. High bandwidth vapor density diagnostic system

    DOE Patents [OSTI]

    Globig, Michael A.; Story, Thomas W.

    1992-01-01

    A high bandwidth vapor density diagnostic system for measuring the density of an atomic vapor during one or more photoionization events. The system translates the measurements from a low frequency region to a high frequency, relatively noise-free region in the spectrum to provide improved signal to noise ratio.

  8. Fast Faraday Cup With High Bandwidth

    DOE Patents [OSTI]

    Deibele, Craig E [Knoxville, TN

    2006-03-14

    A circuit card stripline Fast Faraday cup quantitatively measures the picosecond time structure of a charged particle beam. The stripline configuration maintains signal integrity, and stitching of the stripline increases the bandwidth. A calibration procedure ensures the measurement of the absolute charge and time structure of the charged particle beam.

  9. ION SWITCH

    DOE Patents [OSTI]

    Cook, B.

    1959-02-10

    An ion switch capable of transferring large magnitudes of power is described. An ion switch constructed in accordance with the invention includes a pair of spaced control electrodes disposed in a highly evacuated region for connection in a conventional circuit to control the passing of power therethrough. A controllable ionic conduction path is provided directiy between the control electrodes by a source unit to close the ion switch. Conventional power supply means are provided to trigger the source unit and control the magnitude, durations and pulse repetition rate of the aforementioned ionic conduction path.

  10. Optical Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    seven wonders Optical Switch A key component in the laser chain, an optical switch called a plasma electrode Pockels cell (PEPC), was invented and developed at LLNL. A Pockels cell rotates the polarization of a laser beam when a voltage is applied across an electro-optic crystal. Depending on the voltage applied, the Pockels cell either allows light to pass through or to reflect off a polarizer, creating an optical switch. For each of NIF's 192 beamlines, a PEPC allows the laser pulse to make

  11. Acceleration switch

    DOE Patents [OSTI]

    Abbin, J.P. Jr.; Middleton, J.N.; Schildknecht, H.E.

    1979-08-20

    An improved acceleration switch is described which is of the type having a mass suspended within a chamber, having little fluid damping at low g levels and high fluid damping at high g levels.

  12. Acceleration switch

    DOE Patents [OSTI]

    Abbin, Jr., Joseph P.; Middleton, John N.; Schildknecht, Harold E.

    1981-01-01

    The disclosure relates to an improved acceleration switch, of the type having a mass suspended within a chamber, having little fluid damping at low g levels and high fluid damping at high g levels.

  13. Acceleration switch

    DOE Patents [OSTI]

    Abbin, Jr., Joseph P.; Devaney, Howard F.; Hake, Lewis W.

    1982-08-17

    The disclosure relates to an improved integrating acceleration switch of the type having a mass suspended within a fluid filled chamber, with the motion of the mass initially opposed by a spring and subsequently not so opposed.

  14. High Bandwidth Differential Amplifier for Shock Experiments

    SciTech Connect (OSTI)

    Ross, P. W., Tran, V., Chau, R.

    2012-04-30

    We developed a high bandwidth differential amplifier for gas gun shock experiments/applications. The circuit has a bandwidth > 1 GHz, and is capable of measuring signals of ?1.5 V with a common mode rejection of 250 V. Conductivity measurements of gas gun targets are measured by flowing high currents through the targets. The voltage is measured across the target using a technique similar to a four-point probe. Because of the design of the current source and load, the target voltage is approximately 250 V relative to ground. Since the expected voltage change in the target is < 1 V, the differential amplifier must have a large common mode rejection. High pass filters suppress internal ringing of operational amplifiers. Results of bench tests are shown.

  15. Bandwidth Study U.S. Advanced High Strength Steel Manufacturing...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PDF icon AHSS Report.pdf More Documents & Publications Bandwidth Study U.S. Advanced High Strength Steel Manufacturing, Draft Bandwidth Study U.S. Iron and Steel Manufacturing ITP ...

  16. Bandwidth Study U.S. Pulp and Paper Manufacturing | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Pulp and Paper Manufacturing Bandwidth Study U.S. Pulp and Paper Manufacturing Pulp-Paper.jpg Energy bandwidth studies of U.S. manufacturing sectors can serve as foundational ...

  17. Bandwidth Study U.S. Chemical Manufacturing | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Chemical Manufacturing Bandwidth Study U.S. Chemical Manufacturing Chemicals.jpg Energy bandwidth studies of U.S. manufacturing sectors can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities. This bandwidth study examines energy consumption and potential energy savings opportunities in U.S. chemical manufacturing. The study relies on multiple sources to estimate the energy used in the production of 74 individual chemicals, representing

  18. Optical switch

    DOE Patents [OSTI]

    Reedy, Robert P.

    1987-01-01

    An optical switching device (10) is provided whereby light from a first glass fiber (16) or a second glass fiber (14) may be selectively transmitted into a third glass fiber (18). Each glass fiber is provided with a focusing and collimating lens system (26, 28, 30). In one mode of operation, light from the first glass fiber (16) is reflected by a planar mirror (36) into the third glass fiber (18). In another mode of operation, light from the second glass fiber (14) passes directly into the third glass fiber (18). The planar mirror (36) is attached to a rotatable table (32) which is rotated to provide the optical switching.

  19. Optical switch

    DOE Patents [OSTI]

    Reedy, R.P.

    1987-11-10

    An optical switching device is provided whereby light from a first glass fiber or a second glass fiber may be selectively transmitted into a third glass fiber. Each glass fiber is provided with a focusing and collimating lens system. In one mode of operation, light from the first glass fiber is reflected by a planar mirror into the third glass fiber. In another mode of operation, light from the second glass fiber passes directly into the third glass fiber. The planar mirror is attached to a rotatable table which is rotated to provide the optical switching. 3 figs.

  20. Tunable pulsed narrow bandwidth light source

    DOE Patents [OSTI]

    Powers, Peter E.; Kulp, Thomas J.

    2002-01-01

    A tunable pulsed narrow bandwidth light source and a method of operating a light source are provided. The light source includes a pump laser, first and second non-linear optical crystals, a tunable filter, and light pulse directing optics. The method includes the steps of operating the pump laser to generate a pulsed pump beam characterized by a nanosecond pulse duration and arranging the light pulse directing optics so as to (i) split the pulsed pump beam into primary and secondary pump beams; (ii) direct the primary pump beam through an input face of the first non-linear optical crystal such that a primary output beam exits from an output face of the first non-linear optical crystal; (iii) direct the primary output beam through the tunable filter to generate a sculpted seed beam; and direct the sculpted seed beam and the secondary pump beam through an input face of the second non-linear optical crystal such that a secondary output beam characterized by at least one spectral bandwidth on the order of about 0.1 cm.sup.-1 and below exits from an output face of the second non-linear optical crystal.

  1. SHOCK INITIATION EXPERIMENTS ON THE TATB BASED EXPLOSIVE RX-03-GO WITH IGNITION AND GROWTH MODELING

    SciTech Connect (OSTI)

    Vandersall, K S; Garcia, F; Tarver, C M

    2009-06-23

    Shock initiation experiments on the TATB based explosive RX-03-GO (92.5% TATB, 7.5% Cytop A by weight) were performed to obtain in-situ pressure gauge data, characterize the run-distance-to-detonation behavior, and calculate Ignition and Growth modeling parameters. A 101 mm diameter propellant driven gas gun was utilized to initiate the explosive sample with manganin piezoresistive pressure gauge packages placed between sample slices. The RX-03-GO formulation utilized is similar to that of LX-17 (92.5% TATB, 7.5% Kel-f by weight) with the notable differences of a new binder material and TATB that has been dissolved and recrystallized in order to improve the purity and morphology. The shock sensitivity will be compared with that of prior data on LX-17 and other TATB formulations. Ignition and Growth modeling parameters were obtained with a reasonable fit to the experimental data.

  2. Compact antenna arrays with wide bandwidth and low sidelobe levels

    DOE Patents [OSTI]

    Strassner, II, Bernd H.

    2014-09-09

    Highly efficient, low cost, easily manufactured SAR antenna arrays with lightweight low profiles, large instantaneous bandwidths and low SLL are disclosed. The array topology provides all necessary circuitry within the available antenna aperture space and between the layers of material that comprise the aperture. Bandwidths of 15.2 GHz to 18.2 GHz, with 30 dB SLLs azimuthally and elevationally, and radiation efficiencies above 40% may be achieved. Operation over much larger bandwidths is possible as well.

  3. Bandwidth Study U.S. Iron and Steel Manufacturing | Department...

    Broader source: Energy.gov (indexed) [DOE]

    This bandwidth study examines energy consumption and potential energy savings opportunities in U.S. iron and steel manufacturing. The study relies on multiple sources to estimate ...

  4. Bandwidth Study U.S. Petroleum Refining | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    This bandwidth study examines energy consumption and potential energy savings opportunities in U.S. petroleum refining. The study relies on multiple sources to estimate the energy ...

  5. Energy Secretary Moniz Honors ESnet's OSCARS Bandwidth Reservation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    a DOE Secretarial Honor Award for their development of OSCARS, the On-demand Secure Circuits and Reservation System. OSCARS is a software service that creates dedicated bandwidth...

  6. ITP Chemicals: Chemical Bandwidth Study - Energy Analysis: A...

    Broader source: Energy.gov (indexed) [DOE]

    chemicalbandwidthreport.pdf More Documents & Publications ITP Chemicals: Final Report: ... Acid, December 2007 Bandwidth Study U.S. Chemical Manufacturing ITP Chemicals: Energy and ...

  7. Bandwidth Study U.S. Chemical Manufacturing | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    consumption and potential energy savings opportunities in U.S. chemical manufacturing. ... PDF icon ChemicalbandwidthStudy2015.pdf More Documents & Publications Bandwidth Study ...

  8. Increase of the grating coupler bandwidth with a graphene overlay

    SciTech Connect (OSTI)

    Cheng, Zhenzhou; Li, Zhen; Xu, Ke; Tsang, Hon Ki

    2014-03-17

    We present theoretical and experimental results that demonstrate an increase in the grating bandwidth by placing a graphene on the chip. A focusing subwavelength grating with coupling efficiency of ?4.3?dB and 1?dB bandwidth of ?60?nm was demonstrated. After a graphene sheet was transferred onto the chip, the maximum 1?dB bandwidth was increased to ?72?nm. Experimental results are consistent with the calculated graphene induced waveguide refractive index and dispersion changes, and the bandwidth improvement may be attributed to the reduction of grating dispersion. This study may be of interest for graphene-on-silicon photonic integrated circuit applications.

  9. ITP Petroleum Refining: Energy Bandwidth for Petroleum Refining Processes

    Broader source: Energy.gov [DOE]

    This energy bandwidth analysis provides a realistic estimate of the energy that may be saved in petroleum refining processes by quantifying measures of energy consumption.

  10. THYRATRON SWITCH

    DOE Patents [OSTI]

    Creveling, R.; Bourgeois, N.A. Jr.

    1959-04-21

    An arrangement for utilizing a thyratron as a noise free switch is described. It has been discovered that the voltage between plate and cathode of a thyratron will oscillate, producing voltage spikes, if the tube carries only a fraction of its maximum rated current. These voltage spikes can produce detrimental effects where the thyratron is used in critical timing circuits. To alleviate this problem the disclosed circuit provides a charged capacitor and a resistor in parallel with the tube and of such value that the maximum current will flow from the capacitor through the thyratron when it is triggered. During this time the signal current is conducted through the tube, before the thyratron voltage starts to oscillate, and the signal current output is free of noise spikes.

  11. ITP Steel: Steel Industry Energy Bandwidth Study October 2004

    Broader source: Energy.gov [DOE]

    An energy "bandwidth" analysis that identifies the theoretical minimum amount of energy required for each major operation within a given industry, the current amount of energy that is used in operation, and the difference between the two.

  12. Latching relay switch assembly

    DOE Patents [OSTI]

    Duimstra, Frederick A.

    1991-01-01

    A latching relay switch assembly which includes a coil section and a switch or contact section. The coil section includes at least one permanent magnet and at least one electromagnet. The respective sections are, generally, arranged in separate locations or cavities in the assembly. The switch is latched by a permanent magnet assembly and selectively switched by an overriding electromagnetic assembly.

  13. ITP Chemicals: Chemical Bandwidth Study - Energy Analysis: A Powerful Tool

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    for Identifying Process Inefficiencies in the U.S. Chemical Industry, Industrial Technologies Program, DRAFT Summary Report, December 2006 | Department of Energy Chemical Bandwidth Study - Energy Analysis: A Powerful Tool for Identifying Process Inefficiencies in the U.S. Chemical Industry, Industrial Technologies Program, DRAFT Summary Report, December 2006 ITP Chemicals: Chemical Bandwidth Study - Energy Analysis: A Powerful Tool for Identifying Process Inefficiencies in the U.S. Chemical

  14. Radiation hard vacuum switch

    DOE Patents [OSTI]

    Boettcher, Gordon E.

    1990-01-01

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

  15. Bandwidth Study U.S. Advanced High Strength Steel Manufacturing, Draft |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Advanced High Strength Steel Manufacturing, Draft Bandwidth Study U.S. Advanced High Strength Steel Manufacturing, Draft Bandwidth Study U.S. Advanced High Strength Steel Manufacturing, Draft Energy bandwidth studies can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities in manufacturing. This bandwidth study is one of a series of six energy bandwidth studies on manufacturing lightweight structural materials.

  16. Bandwidth Study U.S. Aluminum Manufacturing, Draft | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Aluminum Manufacturing, Draft Bandwidth Study U.S. Aluminum Manufacturing, Draft Bandwidth Study U.S. Aluminum Manufacturing, Draft Energy bandwidth studies can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities in manufacturing. This bandwidth study is one of a series of six energy bandwidth studies on manufacturing lightweight structural materials. The study examines energy consumption and potential energy savings opportunities in

  17. Bandwidth Study U.S. Carbon Fiber Reinforced Polymer Manufacturing, Draft |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Carbon Fiber Reinforced Polymer Manufacturing, Draft Bandwidth Study U.S. Carbon Fiber Reinforced Polymer Manufacturing, Draft Bandwidth Study U.S. Carbon Fiber Reinforced Polymer Manufacturing, Draft Energy bandwidth studies can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities in manufacturing. This bandwidth study is one of a series of six energy bandwidth studies on manufacturing lightweight structural

  18. Bandwidth Study U.S. Glass Fiber Reinforced Polymer Manufacturing, Draft |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Glass Fiber Reinforced Polymer Manufacturing, Draft Bandwidth Study U.S. Glass Fiber Reinforced Polymer Manufacturing, Draft Bandwidth Study U.S. Glass Fiber Reinforced Polymer Manufacturing, Draft Energy bandwidth studies can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities in manufacturing. This bandwidth study is one of a series of six energy bandwidth studies on manufacturing lightweight structural

  19. Latching micro optical switch

    DOE Patents [OSTI]

    Garcia, Ernest J; Polosky, Marc A

    2013-05-21

    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  20. Correlation and image compression for limited-bandwidth CCD.

    SciTech Connect (OSTI)

    Thompson, Douglas G.

    2005-07-01

    As radars move to Unmanned Aerial Vehicles with limited-bandwidth data downlinks, the amount of data stored and transmitted with each image becomes more significant. This document gives the results of a study to determine the effect of lossy compression in the image magnitude and phase on Coherent Change Detection (CCD). We examine 44 lossy compression types, plus lossless zlib compression, and test each compression method with over 600 CCD image pairs. We also derive theoretical predictions for the correlation for most of these compression schemes, which compare favorably with the experimental results. We recommend image transmission formats for limited-bandwidth programs having various requirements for CCD, including programs which cannot allow performance degradation and those which have stricter bandwidth requirements at the expense of CCD performance.

  1. Remote switch actuator

    DOE Patents [OSTI]

    Haas, Edwin Gerard; Beauman, Ronald; Palo, Jr., Stefan

    2013-01-29

    The invention provides a device and method for actuating electrical switches remotely. The device is removably attached to the switch and is actuated through the transfer of a user's force. The user is able to remain physically removed from the switch site obviating need for protective equipment. The device and method allow rapid, safe actuation of high-voltage or high-current carrying electrical switches or circuit breakers.

  2. Ultrafast pulsed laser utilizing broad bandwidth laser glass

    DOE Patents [OSTI]

    Payne, S.A.; Hayden, J.S.

    1997-09-02

    An ultrafast laser uses a Nd-doped phosphate laser glass characterized by a particularly broad emission bandwidth to generate the shortest possible output pulses. The laser glass is composed primarily of P{sub 2}O{sub 5}, Al{sub 2}O{sub 3} and MgO, and possesses physical and thermal properties that are compatible with standard melting and manufacturing methods. The broad bandwidth laser glass can be used in modelocked oscillators as well as in amplifier modules. 7 figs.

  3. Ultrafast pulsed laser utilizing broad bandwidth laser glass

    DOE Patents [OSTI]

    Payne, Stephen A.; Hayden, Joseph S.

    1997-01-01

    An ultrafast laser uses a Nd-doped phosphate laser glass characterized by a particularly broad emission bandwidth to generate the shortest possible output pulses. The laser glass is composed primarily of P.sub.2 O.sub.5, Al.sub.2 O.sub.3 and MgO, and possesses physical and thermal properties that are compatible with standard melting and manufacturing methods. The broad bandwidth laser glass can be used in modelocked oscillators as well as in amplifier modules.

  4. Triggered plasma opening switch

    DOE Patents [OSTI]

    Mendel, Clifford W.

    1988-01-01

    A triggerable opening switch for a very high voltage and current pulse includes a transmission line extending from a source to a load and having an intermediate switch section including a plasma for conducting electrons between transmission line conductors and a magnetic field for breaking the plasma conduction path and magnetically insulating the electrons when it is desired to open the switch.

  5. REMOTE CONTROLLED SWITCHING DEVICE

    DOE Patents [OSTI]

    Hobbs, J.C.

    1959-02-01

    An electrical switching device which can be remotely controlled and in which one or more switches may be accurately operated at predetermined times or with predetermined intervening time intervals is described. The switching device consists essentially of a deck, a post projecting from the deck at right angles thereto, cam means mounted for rotation around said posts and a switch connected to said deck and actuated by said cam means. Means is provided for rotating the cam means at a constant speed and the switching apparatus is enclosed in a sealed container with external adjusting means and electrical connection elements.

  6. Bandwidth Study U.S. Iron and Steel Manufacturing | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Iron and Steel Manufacturing Bandwidth Study U.S. Iron and Steel Manufacturing Bandwidth Study U.S. Iron and Steel Manufacturing Energy bandwidth studies of U.S. manufacturing sectors can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities. This bandwidth study examines energy consumption and potential energy savings opportunities in U.S. iron and steel manufacturing. The study relies on multiple sources to estimate the energy used in

  7. Bandwidth utilization maximization of scientific RF communication systems

    SciTech Connect (OSTI)

    Rey, D.; Ryan, W.; Ross, M.

    1997-01-01

    A method for more efficiently utilizing the frequency bandwidth allocated for data transmission is presented. Current space and range communication systems use modulation and coding schemes that transmit 0.5 to 1.0 bits per second per Hertz of radio frequency bandwidth. The goal in this LDRD project is to increase the bandwidth utilization by employing advanced digital communications techniques. This is done with little or no increase in the transmit power which is usually very limited on airborne systems. Teaming with New Mexico State University, an implementation of trellis coded modulation (TCM), a coding and modulation scheme pioneered by Ungerboeck, was developed for this application and simulated on a computer. TCM provides a means for reliably transmitting data while simultaneously increasing bandwidth efficiency. The penalty is increased receiver complexity. In particular, the trellis decoder requires high-speed, application-specific digital signal processing (DSP) chips. A system solution based on the QualComm Viterbi decoder and the Graychip DSP receiver chips is presented.

  8. Effective switching frequency multiplier inverter

    DOE Patents [OSTI]

    Su, Gui-Jia (Oak Ridge, TN); Peng, Fang Z. (Okemos, MI)

    2007-08-07

    A switching frequency multiplier inverter for low inductance machines that uses parallel connection of switches and each switch is independently controlled according to a pulse width modulation scheme. The effective switching frequency is multiplied by the number of switches connected in parallel while each individual switch operates within its limit of switching frequency. This technique can also be used for other power converters such as DC/DC, AC/DC converters.

  9. Thermally actuated thermionic switch

    DOE Patents [OSTI]

    Barrus, Donald M.; Shires, Charles D.

    1988-01-01

    A thermally actuated thermionic switch which responds to an increase of temperature by changing from a high impedance to a low impedance at a predictable temperature set point. The switch has a bistable operation mode switching only on temperature increases. The thermionic material may be a metal which is liquid at the desired operation temperature and held in matrix in a graphite block reservoir, and which changes state (ionizes, for example) so as to be electrically conductive at a desired temperature.

  10. Thermally actuated thermionic switch

    DOE Patents [OSTI]

    Barrus, D.M.; Shires, C.D.

    1982-09-30

    A thermally actuated thermionic switch which responds to an increase of temperature by changing from a high impedance to a low impedance at a predictable temperature set point. The switch has a bistable operation mode switching only on temperature increases. The thermionic material may be a metal which is liquid at the desired operation temperature and held in matrix in a graphite block reservoir, and which changes state (ionizes, for example) so as to be electrically conductive at a desired temperature.

  11. Solid state switch

    DOE Patents [OSTI]

    Merritt, Bernard T.; Dreifuerst, Gary R.

    1994-01-01

    A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1500 A peak, 1.0 .mu.s pulsewidth, and 4500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry.

  12. Alarm toe switch

    DOE Patents [OSTI]

    Ganyard, Floyd P.

    1982-01-01

    An alarm toe switch inserted within a shoe for energizing an alarm circuit n a covert manner includes an insole mounting pad into which a miniature reed switch is fixedly molded. An elongated slot perpendicular to the reed switch is formed in the bottom surface of the mounting pad. A permanent cylindrical magnet positioned in the forward portion of the slot with a diameter greater than the pad thickness causes a bump above the pad. A foam rubber block is also positioned in the slot rearwardly of the magnet and holds the magnet in normal inoperative relation. A non-magnetic support plate covers the slot and holds the magnet and foam rubber in the slot. The plate minimizes bending and frictional forces to improve movement of the magnet for reliable switch activation. The bump occupies the knuckle space beneath the big toe. When the big toe is scrunched rearwardly the magnet is moved within the slot relative to the reed switch, thus magnetically activating the switch. When toe pressure is released the foam rubber block forces the magnet back into normal inoperative position to deactivate the reed switch. The reed switch is hermetically sealed with the magnet acting through the wall so the switch assembly S is capable of reliable operation even in wet and corrosive environments.

  13. Reusable fast opening switch

    DOE Patents [OSTI]

    Van Devender, John P. (Albuquerque, NM); Emin, David (Albuquerque, NM)

    1986-01-01

    A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and insulating states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

  14. Reusable fast opening switch

    DOE Patents [OSTI]

    Van Devender, J.P.; Emin, D.

    1983-12-21

    A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and metallic states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

  15. Reflective HTS switch

    DOE Patents [OSTI]

    Martens, Jon S. (Albuquerque, NM); Hietala, Vincent M. (Placitas, NM); Hohenwarter, Gert K. G. (Madison, WI)

    1994-01-01

    A HTS switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time.

  16. Reflective HTS switch

    DOE Patents [OSTI]

    Martens, J.S.; Hietala, V.M.; Hohenwarter, G.K.G.

    1994-09-27

    A HTS (High Temperature Superconductor) switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time. 6 figs.

  17. Advanced Soft Switching Inverter for Reducing Switching and Power Losses |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Soft Switching Inverter for Reducing Switching and Power Losses Advanced Soft Switching Inverter for Reducing Switching and Power Losses 2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C. PDF icon ape011_lai_2010_o.pdf More Documents & Publications Advanced Soft Switching Inverter for Reducing Switching and Power Losses Electro-thermal-mechanical Simulation and Reliability for

  18. Erected mirror optical switch

    DOE Patents [OSTI]

    Allen, James J.

    2005-06-07

    A microelectromechanical (MEM) optical switching apparatus is disclosed that is based on an erectable mirror which is formed on a rotatable stage using surface micromachining. An electrostatic actuator is also formed on the substrate to rotate the stage and mirror with a high angular precision. The mirror can be erected manually after fabrication of the device and used to redirect an incident light beam at an arbitrary angel and to maintain this state in the absence of any applied electrical power. A 1.times.N optical switch can be formed using a single rotatable mirror. In some embodiments of the present invention, a plurality of rotatable mirrors can be configured so that the stages and mirrors rotate in unison when driven by a single micromotor thereby forming a 2.times.2 optical switch which can be used to switch a pair of incident light beams, or as a building block to form a higher-order optical switch.

  19. Advanced Soft Switching Inverter for Reducing Switching and Power...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Advanced Soft Switching Inverter for Reducing Switching and Power Losses Electro-thermal-mechanical Simulation and Reliability for Plug-in Vehicle Converters and Inverters Electro-...

  20. Advanced Soft Switching Inverter for Reducing Switching and Power...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Advanced Soft Switching Inverter for Reducing Switching and Power Losses Electro-thermal-mechanical Simulation and Reliability for Plug-in Vehicle Converters and Inverters ...

  1. Bandwidth Study U.S. Pulp and Paper Manufacturing | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Pulp and Paper Manufacturing Bandwidth Study U.S. Pulp and Paper Manufacturing Pulp-Paper.jpg Energy bandwidth studies of U.S. manufacturing sectors can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities. This bandwidth study examines energy consumption and potential energy savings opportunities in U.S. pulp and paper manufacturing. The study relies on multiple sources to estimate the energy used in six individual process areas,

  2. U.S. Mining Industry Energy Bandwidth Study | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Mining Industry Energy Bandwidth Study U.S. Mining Industry Energy Bandwidth Study PDF icon mining_bandwidth.pdf More Documents & Publications ITP Mining: Energy and Environmental Profile of the U.S. Mining Industry (December 2002) ITP Mining: Mining Industry of the Future Mineral Processing Technology Roadmap ITP Steel: Steel Industry Marginal Opportunity Study September 2005

  3. Energy Secretary Moniz Honors ESnet's OSCARS Bandwidth Reservation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Service Energy Secretary Moniz Honors ESnet's OSCARS Bandwidth Reservation Service News & Publications ESnet News Media & Press Publications and Presentations Galleries ESnet Awards and Honors Contact Us Media Jon Bashor, jbashor@lbl.gov, +1 510 486 5849 or Media@es.net Technical Assistance: 1 800-33-ESnet (Inside the US) 1 800-333-7638 (Inside the US) 1 510-486-7600 (Globally) 1 510-486-7607 (Globally) Report Network Problems: trouble@es.net Provide Web Site Feedback: info@es.net

  4. Solid state switch

    DOE Patents [OSTI]

    Merritt, B.T.; Dreifuerst, G.R.

    1994-07-19

    A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1,500 A peak, 1.0 [mu]s pulsewidth, and 4,500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry. 6 figs.

  5. Photoconductive switch package

    DOE Patents [OSTI]

    Caporaso, George J.

    2015-10-27

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  6. Photoconductive switch package

    DOE Patents [OSTI]

    Ca[rasp, George J

    2013-10-22

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  7. Photoconductive switch package

    DOE Patents [OSTI]

    Caporaso, George J

    2015-11-05

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  8. Silicon Carbide JFET Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5kV Enhancement-Model Silicon Carbide JFET Switch The novel 6.5kV SiC device and power module represent the world's highest-voltage module based on reliable, normally-off SiC JFETs. It reduces switching losses over that of Si-IGBTs by a factor of 20 and exhibits the fastest turn- on and turn-off of any 6.5kV-rated power module. Another major aspect of what makes this product unique is USCi's development and manufacturing approach. JFETs are simple transistor switches, yet for SiC materials, a

  9. SPARK GAP SWITCH

    DOE Patents [OSTI]

    Neal, R.B.

    1957-12-17

    An improved triggered spark gap switch is described, capable of precisely controllable firing time while switching very large amounts of power. The invention in general comprises three electrodes adjustably spaced and adapted to have a large potential impressed between the outer electrodes. The central electrode includes two separate elements electrically connected togetaer and spaced apart to define a pair of spark gaps between the end electrodes. Means are provided to cause the gas flow in the switch to pass towards the central electrode, through a passage in each separate element, and out an exit disposed between the two separate central electrode elements in order to withdraw ions from the spark gap.

  10. An optical switch

    DOE Patents [OSTI]

    Christophorou, L.G.; Hunter, S.R.

    1987-04-30

    The invention is a gas mixture for a diffuse discharge switch having an electron attaching gas wherein electron attachment is brought about by indirect excitation of molecules to long live states by exposure to laser light. 3 figs.

  11. Using ultra narrow bandwidth to overcome traditional problems with distribution line carrier

    SciTech Connect (OSTI)

    Hunt, P.C.; Hunt, L.R.

    1995-12-31

    It has long been common knowledge among communication engineers that wide bandwidth signals require more energy to overcome noise than do narrow band signals. This is why, during adverse conditions Morse code radio communications can get through when voice can`t. To achieve similar range: A television transmitter (6000 kHz bandwidth) requires 200,000 watts; A music broadcast transmitter (60 kHz bandwidth) requires 2000 watts; A voice only transmitter (3 kHz bandwidth) requires 100 watts. Carry this principle to extremes: An Ultra Narrow Bandwidth (UNB) transmitter (.00001 kHz bandwidth) requires .003 watts. This paper explores the advantages of using Ultra Narrow Bandwidth (UNB) in power line carrier systems. Using an Automatic Meter Reading System as an example, the authors explore how UNB allows (or sometimes requires) a change in system architecture, which creates further advantages.

  12. A radiation hard vacuum switch

    DOE Patents [OSTI]

    Boettcher, G.E.

    1988-07-19

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction. 3 figs.

  13. Wide-Bandwidth Capture of Wire-Scanner Signals

    SciTech Connect (OSTI)

    Gruchalla, Michael E.; Gilpatrick, John D.; Sedillo, James Daniel; Martinez, Derwin

    2012-05-16

    Integrated charge collected on the sense wires of wire-scanner systems utilized to determine beam profile is generally the parameter of interest. The LANSCE application requires capturing the charge information macropulse-by-macropulse with macropulse lengths as long as 700 {micro}s at a maximum macropulse rate of 120 Hz. Also, for the LANSCE application, it is required that the integration be performed in a manner that does not require integrator reset between macropulses. Due to the long macropulse which must be accommodated and the 8.33 ms minimum pulse period, a simple R-C integrator cannot be utilized since there is insufficient time between macropulses to allow the integrator to adequately recover. The application of wide analog bandwidth to provide accurate pulse-by-pulse capture of the wire signals with digital integration of the wire signals to determine captured charge at each macropulse in applications with comparatively long macropulses and high pulse repetition rates is presented.

  14. High-bandwidth continuous-flow arc furnace

    DOE Patents [OSTI]

    Hardt, David E. (Concord, MA); Lee, Steven G. (Ann Arbor, MI)

    1996-01-01

    A high-bandwidth continuous-flow arc furnace for stream welding applications includes a metal mass contained in a crucible having an orifice. A power source charges an electrode for generating an arc between the electrode and the mass. The arc heats the metal mass to a molten state. A pressurized gas source propels the molten metal mass through the crucible orifice in a continuous stream. As the metal is ejected, a metal feeder replenishes the molten metal bath. A control system regulates the electrode current, shielding gas pressure, and metal source to provide a continuous flow of molten metal at the crucible orifice. Independent control over the electrode current and shield gas pressure decouples the metal flow temperature and the molten metal flow rate, improving control over resultant weld characteristics.

  15. High-bandwidth continuous-flow arc furnace

    DOE Patents [OSTI]

    Hardt, D.E.; Lee, S.G.

    1996-08-06

    A high-bandwidth continuous-flow arc furnace for stream welding applications includes a metal mass contained in a crucible having an orifice. A power source charges an electrode for generating an arc between the electrode and the mass. The arc heats the metal mass to a molten state. A pressurized gas source propels the molten metal mass through the crucible orifice in a continuous stream. As the metal is ejected, a metal feeder replenishes the molten metal bath. A control system regulates the electrode current, shielding gas pressure, and metal source to provide a continuous flow of molten metal at the crucible orifice. Independent control over the electrode current and shield gas pressure decouples the metal flow temperature and the molten metal flow rate, improving control over resultant weld characteristics. 4 figs.

  16. Thermionic gas switch

    DOE Patents [OSTI]

    Hatch, G.L.; Brummond, W.A.; Barrus, D.M.

    1984-04-05

    The present invention is directed to an improved temperature responsive thermionic gas switch utilizing a hollow cathode and a folded emitter surface area. The folded emitter surface area of the thermionic switch substantially increases the on/off ratio by changing the conduction surface area involved in the two modes thereof. The improved switch of this invention provides an on/off ratio of 450:1 compared to the 10:1 ratio of the prior known thermionic switch, while providing for adjusting the on current. In the improved switch of this invention the conduction area is made small in the off mode, while in the on mode the conduction area is made large. This is achieved by utilizing a folded hollow cathode configuration and utilizing a folded emitter surface area, and by making the dimensions of the folds small enough so that a space charge will develop in the convolutions of the folds and suppress unignited current, thus limiting the current carrying surface in the off mode.

  17. Switching power pulse system

    DOE Patents [OSTI]

    Aaland, K.

    1983-08-09

    A switching system for delivering pulses of power from a source to a load using a storage capacitor charged through a rectifier, and maintained charged to a reference voltage level by a transistor switch and voltage comparator. A thyristor is triggered to discharge the storage capacitor through a saturable reactor and fractional turn saturable transformer having a secondary to primary turn ratio N of n:l/n = n[sup 2]. The saturable reactor functions as a soaker'' while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor charges, and then switches to a low impedance state to dump the charge of the storage capacitor into the load through the coupling capacitor. The transformer is comprised of a multilayer core having two secondary windings tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe for a linear particle accelerator and capacitance of a pulse forming network. To hold off discharge of the capacitance until it is fully charged, a saturable core is provided around the resistive beampipe to isolate the beampipe from the capacitance until it is fully charged. 5 figs.

  18. Multiple switch actuator

    DOE Patents [OSTI]

    Beyer, Edward T.

    1976-01-06

    The present invention relates to switches and switch actuating devices to be operated for purposes of arming a bomb or other missile as it is dropped or released from an aircraft. The particular bomb or missile in which this invention is applied is one in which there is a plurality of circuits which are to be armed by the closing of switches upon dropping or releasing of the bomb. The operation of the switches to closed position is normally accomplished by means of a pull-out wire; that is, a wire which is withdrawn from the bomb or missile at the time of release of the bomb, one end of the wire being attached to the aircraft. The conditions to be met are that the arming switches must be positively and surely maintained in open position until the bomb is released and the arming action is effected. The action of the pull-out wire in achieving the arming action must be sure and positive with minimum danger of malfunctioning, jamming or binding.

  19. Switching power supply

    DOE Patents [OSTI]

    Mihalka, A.M.

    1984-06-05

    The invention is a repratable capacitor charging, switching power supply. A ferrite transformer steps up a dc input. The transformer primary is in a full bridge configuration utilizing power MOSFETs as the bridge switches. The transformer secondary is fed into a high voltage, full wave rectifier whose output is connected directly to the energy storage capacitor. The transformer is designed to provide adequate leakage inductance to limit capacitor current. The MOSFETs are switched to the variable frequency from 20 to 50 kHz to charge a capacitor from 0.6 kV. The peak current in a transformer primary and secondary is controlled by increasing the pulse width as the capacitor charges. A digital ripple counter counts pulses and after a preselected desired number is reached an up-counter is clocked.

  20. Microfabricated triggered vacuum switch

    DOE Patents [OSTI]

    Roesler, Alexander W. (Tijeras, NM); Schare, Joshua M. (Albuquerque, NM); Bunch, Kyle (Albuquerque, NM)

    2010-05-11

    A microfabricated vacuum switch is disclosed which includes a substrate upon which an anode, cathode and trigger electrode are located. A cover is sealed over the substrate under vacuum to complete the vacuum switch. In some embodiments of the present invention, a metal cover can be used in place of the trigger electrode on the substrate. Materials used for the vacuum switch are compatible with high vacuum, relatively high temperature processing. These materials include molybdenum, niobium, copper, tungsten, aluminum and alloys thereof for the anode and cathode. Carbon in the form of graphitic carbon, a diamond-like material, or carbon nanotubes can be used in the trigger electrode. Channels can be optionally formed in the substrate to mitigate against surface breakdown.

  1. FAST ACTING CURRENT SWITCH

    DOE Patents [OSTI]

    Batzer, T.H.; Cummings, D.B.; Ryan, J.F.

    1962-05-22

    A high-current, fast-acting switch is designed for utilization as a crowbar switch in a high-current circuit such as used to generate the magnetic confinement field of a plasma-confining and heat device, e.g., Pyrotron. The device particularly comprises a cylindrical housing containing two stationary, cylindrical contacts between which a movable contact is bridged to close the switch. The movable contact is actuated by a differential-pressure, airdriven piston assembly also within the housing. To absorb the acceleration (and the shock imparted to the device by the rapidly driven, movable contact), an adjustable air buffer assembly is provided, integrally connected to the movable contact and piston assembly. Various safety locks and circuit-synchronizing means are also provided to permit proper cooperation of the invention and the high-current circuit in which it is installed. (AEC)

  2. Laser activated diffuse discharge switch (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Laser activated diffuse discharge switch Title: Laser activated diffuse discharge switch The invention is a gas mixture for a diffuse discharge switch which is capable of changing ...

  3. Dedication of Ethernet Switch | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Dedication of Ethernet Switch Dedication of Ethernet Switch A presentation of how Nuclear Logistics Inc. performed CGD on the RuggedCom Ethernet Switches. The presentation lays out ...

  4. Switching power pulse system

    DOE Patents [OSTI]

    Aaland, Kristian

    1983-01-01

    A switching system for delivering pulses of power from a source (10) to a load (20) using a storage capacitor (C3) charged through a rectifier (D1, D2), and maintained charged to a reference voltage level by a transistor switch (Q1) and voltage comparator (12). A thyristor (22) is triggered to discharge the storage capacitor through a saturable reactor (18) and fractional turn saturable transformer (16) having a secondary to primary turn ratio N of n:l/n=n.sup.2. The saturable reactor (18) functions as a "soaker" while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor (C4) charges, and then switches to a low impedance state to dump the charge of the storage capacitor (C3) into the load through the coupling capacitor (C4). The transformer is comprised of a multilayer core (26) having two secondary windings (28, 30) tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes (32, 34) for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe (40) for a linear particle accelerator and capacitance of a pulse forming network (42). To hold off discharge of the capacitance until it is fully charged, a saturable core (44) is provided around the resistive beampipe (40) to isolate the beampipe from the capacitance (42) until it is fully charged.

  5. Transparent electrode for optical switch

    DOE Patents [OSTI]

    Goldhar, J.; Henesian, M.A.

    1984-10-19

    The invention relates generally to optical switches and techniques for applying a voltage to an electro-optical crystal, and more particularly, to transparent electodes for an optical switch. System architectures for very large inertial confinement fusion (ICF) lasers require active optical elements with apertures on the order of one meter. Large aperture optical switches are needed for isolation of stages, switch-out from regenerative amplifier cavities and protection from target retroreflections.

  6. Laser bandwidth interlock capable of single pulse detection and rejection

    DOE Patents [OSTI]

    Armstrong, James P; Telford, Steven James; Lanning, Rodney Kay; Bayramian, Andrew James

    2012-10-09

    A pulse of laser light is switched out of a pulse train and spatially dispersed into its constituent wavelengths. The pulse is collimated to a suitable size and then diffracted by high groove density multilayer dielectric gratings. This imparts a different angle to each individual wavelength so that, when brought to the far field with a lens, the colors have spread out in a linear arrangement. The distance between wavelengths (resolution) can be tailored for the specific laser and application by altering the number of times the beam strikes the diffraction gratings, the groove density of the gratings and the focal length of the lens. End portions of the linear arrangement are each directed to a respective detector, which converts the signal to a 1 if the level meets a set-point, and a 0 if the level does not. If both detectors produces a 1, then the pulse train is allowed to propagate into an optical system.

  7. Effects of large laser bandwidth on stimulated Raman scattering instability in underdense plasma

    SciTech Connect (OSTI)

    Zhao, Yao; Yu, Lu-Le; Zheng, Jun; Weng, Su-Ming; Ren, Chuang; Liu, Chuan-Sheng; Sheng, Zheng-Ming E-mail: zhengming.sheng@strath.ac.uk

    2015-05-15

    The effects of laser bandwidth on stimulated Raman scattering (SRS) instability in underdense plasma are studied by particle-in-cell simulations. In the simulations, sinusoidal frequency modulation of the incident laser pulse is used. By changing the size of bandwidth, it is shown that the linear growth of SRS can be suppressed considerably, provided the laser bandwidth is much larger than the SRS linear growth rate. Simulations also show that by choosing the proper frequency modulation parameters or decreasing the linear growth rate of SRS, the inhibitory effects become more obvious. The plasma electron temperature tends to weaken the bandwidth effects especially when it is over a keV level. The laser bandwidth can only increase the time duration for linear growth but cannot diminish the instability completely.

  8. Optical fiber switch

    DOE Patents [OSTI]

    Early, James W.; Lester, Charles S.

    2002-01-01

    Optical fiber switches operated by electrical activation of at least one laser light modulator through which laser light is directed into at least one polarizer are used for the sequential transport of laser light from a single laser into a plurality of optical fibers. In one embodiment of the invention, laser light from a single excitation laser is sequentially transported to a plurality of optical fibers which in turn transport the laser light to separate individual remotely located laser fuel ignitors. The invention can be operated electro-optically with no need for any mechanical or moving parts, or, alternatively, can be operated electro-mechanically. The invention can be used to switch either pulsed or continuous wave laser light.

  9. Plasma opening switch

    DOE Patents [OSTI]

    Savage, Mark E.; Mendel, Jr., Clifford W.

    2001-01-01

    A command triggered plasma opening switch assembly using an amplification stage. The assembly surrounds a coaxial transmission line and has a main plasma opening switch (POS) close to the load and a trigger POS upstream from the main POS. The trigger POS establishes two different current pathways through the assembly depended on whether it has received a trigger current pulse. The initial pathway has both POS's with plasma between their anodes and cathodes to form a short across the transmission line and isolating the load. The final current pathway is formed when the trigger POS receives a trigger current pulse which energizes its fast coil to push the conductive plasma out from between its anode and cathode, allowing the main transmission line current to pass to the fast coil of the main POS, thus pushing its plasma out the way so as to establish a direct current pathway to the load.

  10. MULTIPLE SPARK GAP SWITCH

    DOE Patents [OSTI]

    Schofield, A.E.

    1958-07-22

    A multiple spark gap switch of unique construction is described which will permit controlled, simultaneous discharge of several capacitors into a load. The switch construction includes a disc electrode with a plurality of protuberances of generally convex shape on one surface. A firing electrode is insulatingly supponted In each of the electrode protuberances and extends substantially to the apex thereof. Individual electrodes are disposed on an insulating plate parallel with the disc electrode to form a number of spark gaps with the protuberances. These electrodes are each connected to a separate charged capacitor and when a voltage ls applied simultaneously between the trigger electrodes and the dlsc electrode, each spark gap fires to connect its capacitor to the disc electrode and a subsequent load.

  11. Automatic switching matrix

    DOE Patents [OSTI]

    Schlecht, Martin F.; Kassakian, John G.; Caloggero, Anthony J.; Rhodes, Bruce; Otten, David; Rasmussen, Neil

    1982-01-01

    An automatic switching matrix that includes an apertured matrix board containing a matrix of wires that can be interconnected at each aperture. Each aperture has associated therewith a conductive pin which, when fully inserted into the associated aperture, effects electrical connection between the wires within that particular aperture. Means is provided for automatically inserting the pins in a determined pattern and for removing all the pins to permit other interconnecting patterns.

  12. CREE: Making the Switch

    ScienceCinema (OSTI)

    Grider, David; Palmer, John

    2014-04-09

    CREE, with the help of ARPA-E funding, has developed a Silicon Carbide (SIC) transistor which can be used to create solid state transformers capable of meeting the unique needs of the emerging smart grid. SIC transistors are different from common silicon computer chips in that they handle grid scale voltages with ease and their high frequency switching is well suited to the intermittent nature of renewable energy generation.

  13. CREE: Making the Switch

    SciTech Connect (OSTI)

    Grider, David; Palmer, John

    2014-03-06

    CREE, with the help of ARPA-E funding, has developed a Silicon Carbide (SIC) transistor which can be used to create solid state transformers capable of meeting the unique needs of the emerging smart grid. SIC transistors are different from common silicon computer chips in that they handle grid scale voltages with ease and their high frequency switching is well suited to the intermittent nature of renewable energy generation.

  14. Bandwidth Study on Energy Use and Potential Energy Saving Opportunities in U.S. Chemical Manufacturing

    SciTech Connect (OSTI)

    Sabine Brueske, Caroline Kramer, Aaron Fisher

    2015-06-01

    Energy bandwidth studies of U.S. manufacturing sectors can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities. This bandwidth study examines energy consumption and potential energy savings opportunities in U.S. chemical manufacturing. The study relies on multiple sources to estimate the energy used in the production of 74 individual chemicals, representing 57% of sector-wide energy consumption. Energy savings opportunities for individual chemicals and for 15 subsectors of chemicals manufacturing are based on technologies currently in use or under development; these potential savings are then extrapolated to estimate sector-wide energy savings opportunity.

  15. Bandwidth Study on Energy Use and Potential Energy Savings Opportunities in U.S. Petroleum Refining

    SciTech Connect (OSTI)

    Sabine Brueske, Caroline Kramer, Aaron Fisher

    2015-06-01

    Energy bandwidth studies of U.S. manufacturing sectors can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities. This bandwidth study examines energy consumption and potential energy savings opportunities in U.S. petroleum refining. The study relies on multiple sources to estimate the energy used in nine individual process areas, representing 68% of sector-wide energy consumption. Energy savings opportunities for individual processes are based on technologies currently in use or under development; these potential savings are then extrapolated to estimate sector-wide energy savings opportunity.

  16. Neutron activated switch

    DOE Patents [OSTI]

    Barton, David M.

    1991-01-01

    A switch for reacting quickly to a neutron emission. A rod consisting of fissionable material is located inside a vacuum tight body. An adjustable contact is located coaxially at an adjustable distance from one end of the rod. Electrical leads are connected to the rod and to the adjustable contact. With a vacuum drawn inside the body, a neutron bombardment striking the rod causes it to heat and expand longitudinally until it comes into contact with the adjustable contact. This circuit closing occurs within a period of a few microseconds.

  17. Two-Bunch Self-Seeding for Narrow-Bandwidth Hard X-Ray Free-Electron...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Two-Bunch Self-Seeding for Narrow-Bandwidth Hard X-Ray Free-Electron Lasers Citation Details In-Document Search Title: Two-Bunch Self-Seeding for Narrow-Bandwidth...

  18. Compound semiconductor optical waveguide switch

    DOE Patents [OSTI]

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  19. Sensor Switch's Bright Manufacturing Future

    Broader source: Energy.gov [DOE]

    The switch helps with cost effective energy savings by turning off the lights when an occupancy sensor says the room is empty.

  20. Switch LLC | Open Energy Information

    Open Energy Info (EERE)

    Maryland Zip: 20886 Sector: Solar Product: Installer and distributor of small-scale solar passive, PV, fuel cell, and other distributed energy systems. References: Switch...

  1. Data center coolant switch

    SciTech Connect (OSTI)

    Iyengar, Madhusudan K.; Parida, Pritish R.; Schultz, Mark D.

    2015-10-06

    A data center cooling system is operated in a first mode; it has an indoor portion wherein heat is absorbed from components in the data center, and an outdoor heat exchanger portion wherein outside air is used to cool a first heat transfer fluid (e.g., water) present in at least the outdoor heat exchanger portion of the cooling system during the first mode. The first heat transfer fluid is a relatively high performance heat transfer fluid (as compared to the second fluid), and has a first heat transfer fluid freezing point. A determination is made that an appropriate time has been reached to switch from the first mode to a second mode. Based on this determination, the outdoor heat exchanger portion of the data cooling system is switched to a second heat transfer fluid, which is a relatively low performance heat transfer fluid, as compared to the first heat transfer fluid. It has a second heat transfer fluid freezing point lower than the first heat transfer fluid freezing point, and the second heat transfer fluid freezing point is sufficiently low to operate without freezing when the outdoor air temperature drops below a first predetermined relationship with the first heat transfer fluid freezing point.

  2. Tuning gain and bandwidth of traveling wave tubes using metamaterial beam-wave interaction structures

    SciTech Connect (OSTI)

    Lipton, Robert Polizzi, Anthony

    2014-10-14

    We employ metamaterial beam-wave interaction structures for tuning the gain and bandwidth of short traveling wave tubes. The interaction structures are made from metal rings of uniform cross section, which are periodically deployed along the length of the traveling wave tube. The aspect ratio of the ring cross sections is adjusted to control both gain and bandwidth. The frequency of operation is controlled by the filling fraction of the ring cross section with respect to the size of the period cell.

  3. RX J0848.6+4453: The evolution of galaxy sizes and stellar populations in A z = 1.27 cluster

    SciTech Connect (OSTI)

    Jrgensen, Inger; Chiboucas, Kristin; Schiavon, Ricardo P.; Toft, Sune; Zirm, Andrew; Bergmann, Marcel; Grtzbauch, Ruth E-mail: kchiboucas@gemini.edu E-mail: sune@dark-cosmology.dk E-mail: marcelbergmann@gmail.com

    2014-12-01

    RX J0848.6+4453 (Lynx W) at redshift 1.27 is part of the Lynx Supercluster of galaxies. We present an analysis of the stellar populations and star formation history for a sample of 24 members of the cluster. Our study is based on deep optical spectroscopy obtained with Gemini North combined with imaging data from Hubble Space Telescope. Focusing on the 13 bulge-dominated galaxies for which we can determine central velocity dispersions, we find that these show a smaller evolution with redshift of sizes and velocity dispersions than reported for field galaxies and galaxies in poorer clusters. Our data show that the galaxies in RX J0848.6+4453 populate the fundamental plane (FP) similar to that found for lower-redshift clusters. The zero-point offset for the FP is smaller than expected if the cluster's galaxies are to evolve passively through the location of the FP we established in our previous work for z = 0.8-0.9 cluster galaxies and then to the present-day FP. The FP zero point for RX J0848.6+4453 corresponds to an epoch of last star formation at z{sub form}=1.95{sub ?0.15}{sup +0.22}. Further, we find that the spectra of the galaxies in RX J0848.6+4453 are dominated by young stellar populations at all galaxy masses and in many cases show emission indicating low-level ongoing star formation. The average age of the young stellar populations as estimated from the strength of the high-order Balmer line H? is consistent with a major star formation episode 1-2 Gyr prior, which in turn agrees with z {sub form} = 1.95. These galaxies dominated by young stellar populations are distributed throughout the cluster. We speculate that low-level star formation has not yet been fully quenched in the center of this cluster, possibly because the cluster is significantly poorer than other clusters previously studied at similar redshifts, which appear to have very little ongoing star formation in their centers. The mixture in RX J0848.6+4453 of passive galaxies with young stellar populations and massive galaxies still experiencing some star formation appears similar to the galaxy populations recently identified in two z ? 2 clusters.

  4. Hybrid switch for resonant power converters

    DOE Patents [OSTI]

    Lai, Jih-Sheng; Yu, Wensong

    2014-09-09

    A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

  5. Gamma-Ray Observations of the Supernova Remnant RX J0852.0-4622 with the Fermi LAT

    SciTech Connect (OSTI)

    Tanaka, T.; Allafort, A.; Ballet, J.; Funk, S.; Giordano, F.; Hewitt, J.; Lemoine-Goumard, M.; Tajima, H.; Tibolla, O.; Uchiyama, Y.; /Stanford U., HEPL /KIPAC, Menlo Park

    2011-12-13

    We report on gamma-ray observations of the supernova remnant (SNR) RX J0852.0-4622 with the Large Area Telescope (LAT) aboard the Fermi Gamma-ray Space Telescope. In the Fermi LAT data, we find a spatially extended source at the location of the SNR. The extension is consistent with the SNR size seen in other wavelengths such as X-rays and TeV gamma rays, leading to the identification of the gamma-ray source with the SNR. The spectrum is well described as a power law with a photon index of {Lambda} = 1.85 {+-} 0.06 (stat){sub -0.19}{sup +0.18} (sys), which smoothly connects to the H.E.S.S. spectrum in the TeV energy band. We discuss the gamma-ray emission mechanism based on multiwavelength data. The broadband data can be fit well by a model in which the gamma rays are of hadronic origin. We also consider a scenario with inverse Compton scattering of electrons as the emission mechanism of the gamma rays. Although the leptonic model predicts a harder spectrum in the Fermi LAT energy range, the model can fit the data considering the statistical and systematic errors.

  6. Mapping the particle acceleration in the cool core of the galaxy cluster RX J1720.1+2638

    SciTech Connect (OSTI)

    Giacintucci, S. [Department of Astronomy, University of Maryland, College Park, MD 20742 (United States); Markevitch, M. [Joint Space-Science Institute, University of Maryland, College Park, MD, 20742-2421 (United States); Brunetti, G.; Venturi, T. [INAFIstituto di Radioastronomia, Via Gobetti 101, I-40129 Bologna (Italy); ZuHone, J. A. [Astrophysics Science Division, NASA/Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Mazzotta, P.; Bourdin, H., E-mail: simona@astro.umd.edu [Dipartimento di Fisica, Universit di Roma Tor Vergata, Via della Ricerca Scientifica 1, I-00133 Rome (Italy)

    2014-11-01

    We present new deep, high-resolution radio images of the diffuse minihalo in the cool core of the galaxy cluster RX J1720.1+2638. The images have been obtained with the Giant Metrewave Radio Telescope at 317, 617, and 1280 MHz and with the Very Large Array at 1.5, 4.9, and 8.4 GHz, with angular resolutions ranging from 1'' to 10''. This represents the best radio spectral and imaging data set for any minihalo. Most of the radio flux of the minihalo arises from a bright central component with a maximum radius of ?80 kpc. A fainter tail of emission extends out from the central component to form a spiral-shaped structure with a length of ?230 kpc, seen at frequencies 1.5 GHz and below. We find indication of a possible steepening of the total radio spectrum of the minihalo at high frequencies. Furthermore, a spectral index image shows that the spectrum of the diffuse emission steepens with increasing distance along the tail. A striking spatial correlation is observed between the minihalo emission and two cold fronts visible in the Chandra X-ray image of this cool core. These cold fronts confine the minihalo, as also seen in numerical simulations of minihalo formation by sloshing-induced turbulence. All these observations favor the hypothesis that the radio-emitting electrons in cluster cool cores are produced by turbulent re-acceleration.

  7. Battery switch for downhole tools

    DOE Patents [OSTI]

    Boling, Brian E.

    2010-02-23

    An electrical circuit for a downhole tool may include a battery, a load electrically connected to the battery, and at least one switch electrically connected in series with the battery and to the load. The at least one switch may be configured to close when a tool temperature exceeds a selected temperature.

  8. "Smart" watchdog safety switch

    DOE Patents [OSTI]

    Kronberg, James W.

    1991-01-01

    A method and apparatus for monitoring a process having a periodic output so that the process equipment is not damaged in the event of a controller failure, comprising a low-pass and peak clipping filter, an event detector that generates an event pulse for each valid change in magnitude of the filtered periodic output, a timing pulse generator, a counter that increments upon receipt of any timing pulse and resets to zero on receipt of any event pulse, an alarm that alerts when the count reaches some preselected total count, and a set of relays that opens to stop power to process equipment. An interface module can be added to allow the switch to accept a variety of periodic output signals.

  9. ''Smart'' watchdog safety switch

    DOE Patents [OSTI]

    Kronberg, J.W.

    1991-10-01

    A method and apparatus for monitoring a process having a periodic output so that the process equipment is not damaged in the event of a controller failure, comprising a low-pass and peak clipping filter, an event detector that generates an event pulse for each valid change in magnitude of the filtered periodic output, a timing pulse generator, a counter that increments upon receipt of any timing pulse and resets to zero on receipt of any event pulse, an alarm that alerts when the count reaches some preselected total count, and a set of relays that opens to stop power to process equipment. An interface module can be added to allow the switch to accept a variety of periodic output signals. 21 figures.

  10. Optimized scalable network switch

    DOE Patents [OSTI]

    Blumrich, Matthias A. (Ridgefield, CT); Chen, Dong (Croton On Hudson, NY); Coteus, Paul W. (Yorktown Heights, NY); Gara, Alan G. (Mount Kisco, NY); Giampapa, Mark E. (Irvington, NY); Heidelberger, Philip (Cortlandt Manor, NY); Steinmacher-Burow, Burkhard D. (Mount Kisco, NY); Takken, Todd E. (Mount Kisco, NY); Vranas, Pavlos M. (Bedford Hills, NY)

    2007-12-04

    In a massively parallel computing system having a plurality of nodes configured in m multi-dimensions, each node including a computing device, a method for routing packets towards their destination nodes is provided which includes generating at least one of a 2m plurality of compact bit vectors containing information derived from downstream nodes. A multilevel arbitration process in which downstream information stored in the compact vectors, such as link status information and fullness of downstream buffers, is used to determine a preferred direction and virtual channel for packet transmission. Preferred direction ranges are encoded and virtual channels are selected by examining the plurality of compact bit vectors. This dynamic routing method eliminates the necessity of routing tables, thus enhancing scalability of the switch.

  11. Optimized scalable network switch

    DOE Patents [OSTI]

    Blumrich, Matthias A.; Chen, Dong; Coteus, Paul W.

    2010-02-23

    In a massively parallel computing system having a plurality of nodes configured in m multi-dimensions, each node including a computing device, a method for routing packets towards their destination nodes is provided which includes generating at least one of a 2m plurality of compact bit vectors containing information derived from downstream nodes. A multilevel arbitration process in which downstream information stored in the compact vectors, such as link status information and fullness of downstream buffers, is used to determine a preferred direction and virtual channel for packet transmission. Preferred direction ranges are encoded and virtual channels are selected by examining the plurality of compact bit vectors. This dynamic routing method eliminates the necessity of routing tables, thus enhancing scalability of the switch.

  12. High voltage coaxial switch

    DOE Patents [OSTI]

    Rink, John P.

    1983-07-19

    A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure.

  13. High voltage coaxial switch

    DOE Patents [OSTI]

    Rink, J.P.

    1983-07-19

    A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure. 3 figs.

  14. FAST OPENING SWITCH

    DOE Patents [OSTI]

    Bender, M.; Bennett, F.K.; Kuckes, A.F.

    1963-09-17

    A fast-acting electric switch is described for rapidly opening a circuit carrying large amounts of electrical power. A thin, conducting foil bridges a gap in this circuit and means are provided for producing a magnetic field and eddy currents in the foil, whereby the foil is rapidly broken to open the circuit across the gap. Advantageously the foil has a hole forming two narrow portions in the foil and the means producing the magnetic field and eddy currents comprises an annular coil having its annulus coaxial with the hole in the foil and turns adjacent the narrow portions of the foil. An electrical current flows through the coil to produce the magnetic field and eddy currents in the foil. (AEC)

  15. Soft Switching Technologies | Open Energy Information

    Open Energy Info (EERE)

    Soft Switching Technologies Jump to: navigation, search Name: Soft Switching Technologies Place: Wisconsin Product: Supplier of power quality solutions for delivery of highly...

  16. Dielectric liquid pulsed-power switch

    DOE Patents [OSTI]

    Christophorou, Loucas G.; Faidas, Homer

    1990-01-01

    This disclosure identifies dielectric liquids for use as opening and closing switching media in pulsed power technology, and describes a dielectric-liquid-pulsed-power switch empolying flashlamps.

  17. Alarm toe switch. [Patent application

    DOE Patents [OSTI]

    Ganyard, F.P.

    1980-11-18

    An alarm toe switch inserted within a shoe for energizing an alarm circuit in a covert manner includes an insole mounting pad into which a miniature reed switch is fixedly molded. An elongated slot perpendicular to the reed switch is formed in the bottom surface of the mounting pad. A permanent cylindrical magnet positioned in the forward portion of the slot with a diameter greater than the pad thickness causes a bump above the pad. A foam rubber block is also positioned in the slot rearwardly of the magnet and holds the magnet in normal inoperative relation. A non-magnetic support plate covers the slot and holds the magnet and foam rubber in the slot. The plate minimizes bending and frictional forces to improve movement of the magnet for reliable switch activation. The bump occupies the knuckle space beneath the big toe. When the big toe is scrunched rearwardly the magnet is moved within the slot relative to the reed switch, thus magnetically activating the switch. When toe pressure is released the foam rubber block forces the magnet back into normal inoperative position to deactivate the reed switch.

  18. Advanced Soft Switching Inverter for Reducing Switching and Power Losses |

    Broader source: Energy.gov (indexed) [DOE]

    Department of Energy 9 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C. PDF icon ape_06_lai.pdf More Documents & Publications Advanced Soft Switching Inverter for Reducing Switching and Power Losses Electro-thermal-mechanical Simulation and Reliability for Plug-in Vehicle Converters and Inverters Electro-thermal-mechanical Simulation and Reliability for Plug-in Vehicle Converters and Inverters

  19. Regenerative switching CMOS system

    DOE Patents [OSTI]

    Welch, J.D.

    1998-06-02

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a series combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electrically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided. 14 figs.

  20. Low impedance switch

    DOE Patents [OSTI]

    Hornig, Donald F.

    1976-01-01

    1. A low inductance switch comprising a pair of spaced apart, annularly shaped, plate members of conducting material supported in substantially parallel, insulated relationship, said plate members being provided with a plurality of radially extending, spoke-like extensions whereby said members may be connected into a plurality of electrical circuits, and an electrical discharge means connected across said spaced plate members for effecting the simultaneous closing of the electrical circuits connected thereto, said electrical discharge means including an elongated, sealed envelope which contains an ionizable gas and which is supported on one of said plate members with the major axis of said envelope extending generally perpendicular to the plane of said plate members, a pair of elongated, spaced apart, insulated electrodes supported within said envelope and extending axially thereof, one of said electrodes being connected to each of said plate members, and a third, firing or trigger electrode supported within said envelope intermediate said main electrodes and being insulated from said main electrodes.

  1. Regenerative switching CMOS system

    DOE Patents [OSTI]

    Welch, James D.

    1998-01-01

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.

  2. Wide Bandgap Extrinsic Photoconductive Switches

    SciTech Connect (OSTI)

    Sullivan, J S

    2012-01-17

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  3. Local intelligent electronic device (IED) rendering templates over limited bandwidth communication link to manage remote IED

    DOE Patents [OSTI]

    Bradetich, Ryan; Dearien, Jason A; Grussling, Barry Jakob; Remaley, Gavin

    2013-11-05

    The present disclosure provides systems and methods for remote device management. According to various embodiments, a local intelligent electronic device (IED) may be in communication with a remote IED via a limited bandwidth communication link, such as a serial link. The limited bandwidth communication link may not support traditional remote management interfaces. According to one embodiment, a local IED may present an operator with a management interface for a remote IED by rendering locally stored templates. The local IED may render the locally stored templates using sparse data obtained from the remote IED. According to various embodiments, the management interface may be a web client interface and/or an HTML interface. The bandwidth required to present a remote management interface may be significantly reduced by rendering locally stored templates rather than requesting an entire management interface from the remote IED. According to various embodiments, an IED may comprise an encryption transceiver.

  4. High PRF high current switch

    DOE Patents [OSTI]

    Moran, Stuart L.; Hutcherson, R. Kenneth

    1990-03-27

    A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

  5. Apparatus and method for increasing the bandwidth of a laser beam

    DOE Patents [OSTI]

    Chaffee, Paul H.

    1991-01-01

    A method and apparatus is disclosed that provides a laser output beam having a broad bandwidth and an intensity smooth over time. The bandwidth of the laser output can be varied easily by varying the intensity of a broadband source. The present invention includes an optical modulation apparatus comprising a narrowband laser that outputs a horizontally polarized beam (a "signal beam") and a broadband laser that outputs a vertically polarized beam (a "pump beam") whose intensity varies rapidly. The two beam are coupled into a birefringent laser material so that the respective polarizations coincide with the principal axes of the material. As the two beams travel through the material, the polarization preserving properties of the birefringent material maintain the respective polarizations of the two beam; however there is coupling between the two beams as a result of cross phase modulations, which induces a bandwidth change of the signal beam. The amount of bandwidth change is dependent upon the average intensity of the pump beam. The beams are coupled out from the birefringent material and the modulated signal beam is separated by a polarization selector. The modulated signal beam now has a wider bandwidth, and its shape remains smooth in time. This signal beam can be applied to incoherence inducing systems. The different bandwidths required by these different incoherence inducing systems can be obtained by varying the intensity of the pump beam. The United States Government has rights in this invention pursuant to Contract No. W7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.

  6. Bandwidth and Electron Correlation-Tuned Superconductivity in Rb 0.8 Fe 2 (

    Office of Scientific and Technical Information (OSTI)

    Se 1 - z S z ) 2 (Journal Article) | SciTech Connect Bandwidth and Electron Correlation-Tuned Superconductivity in Rb 0.8 Fe 2 ( Se 1 - z S z ) 2 Citation Details In-Document Search This content will become publicly available on December 14, 2016 Title: Bandwidth and Electron Correlation-Tuned Superconductivity in Rb 0.8 Fe 2 ( Se 1 - z S z ) 2 Authors: Yi, M. ; Wang, Meng ; Kemper, A. F. ; Mo, S.-K. ; Hussain, Z. ; Bourret-Courchesne, E. ; Lanzara, A. ; Hashimoto, M. ; Lu, D. H. ; Shen,

  7. Nanomechanical switch for integration with CMOS logic.

    SciTech Connect (OSTI)

    Nordquist, Christopher Daniel; Wolfley, Steven L.; Baker, Michael Sean; Czaplewski, David A.; Wendt, Joel Robert; Kraus, Garth Merlin; de Boer, Maarten Pieter; Patrizi, Gary A.

    2008-11-01

    We designed, fabricated and measured the performance of nanoelectromechanical (NEMS) switches. Initial data are reported with one of the switch designs having a measured switching time of 400 ns and an operating voltage of 5 V. The switches operated laterally with unmeasurable leakage current in the 'off' state. Surface micromachining techniques were used to fabricate the switches. All processing was CMOS compatible. A single metal layer, defined by a single mask step, was used as the mechanical switch layer. The details of the modeling, fabrication and testing of the NEMS switches are reported.

  8. Electronic logic for enhanced switch reliability

    DOE Patents [OSTI]

    Cooper, J.A.

    1984-01-20

    A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and fail-safe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

  9. Non-latching relay switch assembly

    DOE Patents [OSTI]

    Duimstra, Frederick A.

    1991-01-01

    A non-latching relay switch assembly which includes a coil section and a switch or contact section. The coil section includes a permanent magnet and an electromagnet. The respective sections are arranged in separate locations or cavities in the assembly. The switch has a "normal" position and is selectively switched by an overriding electromagnetic assembly. The switch returns to the "normal" position when the overriding electromagnetic assembly is inactive.

  10. Performance of a High-Concentration Erbium-Doped Fiber Amplifier with 100 nm Amplification Bandwidth

    SciTech Connect (OSTI)

    Hajireza, P.; Shahabuddin, N. S.; Abbasi-Zargaleh, S.; Emami, S. D.; Abdul-Rashid, H. A.; Yusoff, Z.

    2010-07-07

    Increasing demand for higher bandwidth has driven the need for higher Wavelength Division Multiplexing (WDM) channels. One of the requirements to achieve this is a broadband amplifier. This paper reports the performance of a broadband, compact, high-concentration and silica-based erbium-doped fiber amplifier. The amplifier optimized to a 2.15 m long erbium-doped fiber with erbium ion concentration of 2000 ppm. The gain spectrum of the amplifier has a measured amplification bandwidth of 100 nm using a 980 nm laser diode with power of 150 mW. This silica-based EDFA shows lower noise figure, higher gain and wider bandwidth in shorter wavelengths compared to Bismuth-based EDFA with higher erbium ion concentration of 3250 ppm at equivalent EDF length. The silica-based EDF shows peak gain at 22 dB and amplification bandwidth between 1520 nm and 1620 nm. The lowest noise figure is 5 dB. The gain is further improved with the implementation of enhanced EDFA configurations.

  11. Higher-order effects in bandwidth-limited soliton propagation in optical fibers

    SciTech Connect (OSTI)

    Aceves, A.B.; De Angelis, C. ); Nalesso, G.; Santagiustina, M. )

    1994-12-15

    By means of numerical studies and soliton perturbation theory we examine the effects of higher-order linear and nonlinear terms in bandwidth-limited amplified soliton propagation. We show that these effects are responsible for strong reductions of soliton--soliton interaction in such systems.

  12. Optical Switch Using Risley Prisms

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Christenson, Todd R. (Albuquerque, NM)

    2005-02-22

    An optical switch using Risley prisms and rotary microactuators to independently rotate the wedge prisms of each Risley prism pair is disclosed. The optical switch comprises an array of input Risley prism pairs that selectively redirect light beams from a plurality of input ports to an array of output Risley prism pairs that similarly direct the light beams to a plurality of output ports. Each wedge prism of each Risley prism pair can be independently rotated by a variable-reluctance stepping rotary microactuator that is fabricated by a multi-layer LIGA process. Each wedge prism can be formed integral to the annular rotor of the rotary microactuator by a DXRL process.

  13. Optical switch using Risley prisms

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Christenson, Todd R. (Albuquerque, NM)

    2003-04-15

    An optical switch using Risley prisms and rotary microactuators to independently rotate the wedge prisms of each Risley prism pair is disclosed. The optical switch comprises an array of input Risley prism pairs that selectively redirect light beams from a plurality of input ports to an array of output Risley prism pairs that similarly direct the light beams to a plurality of output ports. Each wedge prism of each Risley prism pair can be independently rotated by a variable-reluctance stepping rotary microactuator that is fabricated by a multi-layer LIGA process. Each wedge prism can be formed integral to the annular rotor of the rotary microactuator by a DXRL process.

  14. Hybrid switch for resonant power converters (Patent) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    Patent: Hybrid switch for resonant power converters Citation Details In-Document Search Title: Hybrid switch for resonant power converters A hybrid switch comprising two ...

  15. High voltage MOSFET switching circuit

    DOE Patents [OSTI]

    McEwan, Thomas E.

    1994-01-01

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  16. Anode initiated surface flashover switch

    DOE Patents [OSTI]

    Brainard, John P.; Koss, Robert J.

    2003-04-29

    A high voltage surface flashover switch has a pair of electrodes spaced by an insulator. A high voltage is applied to an anode, which is smaller than the opposing, grounded, cathode. When a controllable source of electrons near the cathode is energized, the electrons are attracted to the anode where they reflect to the insulator and initiate anode to cathode breakdown.

  17. High voltage MOSFET switching circuit

    DOE Patents [OSTI]

    McEwan, T.E.

    1994-07-26

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

  18. Cavity resonance absorption in ultra-high bandwidth CRT deflection structure by a resistive load

    DOE Patents [OSTI]

    Dunham, Mark E.; Hudson, Charles L.

    1993-01-01

    An improved ultra-high bandwidth helical coil deflection structure for a hode ray tube is described comprising a first metal member having a bore therein, the metal walls of which form a first ground plane; a second metal member coaxially mounted in the bore of the first metal member and forming a second ground plane; a helical deflection coil coaxially mounted within the bore between the two ground planes; and a resistive load disposed in one end of the bore and electrically connected to the first and second ground planes, the resistive load having an impedance substantially equal to the characteristic impedance of the coaxial line formed by the two coaxial ground planes to inhibit cavity resonance in the structure within the ultra-high bandwidth of operation. Preferably, the resistive load comprises a carbon film on a surface of an end plug in one end of the bore.

  19. Cavity resonance absorption in ultra-high bandwidth CRT deflection structure by a resistive load

    DOE Patents [OSTI]

    Dunham, M.E.; Hudson, C.L.

    1993-05-11

    An improved ultra-high bandwidth helical coil deflection structure for a cathode ray tube is described comprising a first metal member having a bore therein, the metal walls of which form a first ground plane; a second metal member coaxially mounted in the bore of the first metal member and forming a second ground plane; a helical deflection coil coaxially mounted within the bore between the two ground planes; and a resistive load disposed in one end of the bore and electrically connected to the first and second ground planes, the resistive load having an impedance substantially equal to the characteristic impedance of the coaxial line formed by the two coaxial ground planes to inhibit cavity resonance in the structure within the ultra-high bandwidth of operation. Preferably, the resistive load comprises a carbon film on a surface of an end plug in one end of the bore.

  20. 'Water window' sources: Selection based on the interplay of spectral properties and multilayer reflection bandwidth

    SciTech Connect (OSTI)

    Li, Bowen; Dunne, Padraig; O'Sullivan, Gerry; Higashiguchi, Takeshi; Otsuka, Takamitsu; Jiang, Weihua; Endo, Akira

    2013-01-28

    Development of laser-produced plasma 'water window' sources poses a major challenge in x-ray research and most effort has focused on line sources for use with zone plate optics. Here, a comparison of carbon and nitrogen line emission with that from both 3d - 4f and 4d - 4f unresolved transition arrays shows that, at power densities available from 'table-top' solid-state lasers, 3d - 4f emission from zirconium plasmas is most intense, and calculations show that in an imaging system based on multilayer mirrors, for reflectance bandwidths >1% has superior performance than either line or broader-band sources. For bandwidths <1%, line sources are preferable.

  1. Spark gap switch with spiral gas flow

    DOE Patents [OSTI]

    Brucker, John P.

    1989-01-01

    A spark gap switch having a contaminate removal system using an injected gas. An annular plate concentric with an electrode of the switch defines flow paths for the injected gas which form a strong spiral flow of the gas in the housing which is effective to remove contaminates from the switch surfaces. The gas along with the contaminates is exhausted from the housing through one of the ends of the switch.

  2. Switch for serial or parallel communication networks

    DOE Patents [OSTI]

    Crosette, Dario B.

    1994-01-01

    A communication switch apparatus and a method for use in a geographically extensive serial, parallel or hybrid communication network linking a multi-processor or parallel processing system has a very low software processing overhead in order to accommodate random burst of high density data. Associated with each processor is a communication switch. A data source and a data destination, a sensor suite or robot for example, may also be associated with a switch. The configuration of the switches in the network are coordinated through a master processor node and depends on the operational phase of the multi-processor network: data acquisition, data processing, and data exchange. The master processor node passes information on the state to be assumed by each switch to the processor node associated with the switch. The processor node then operates a series of multi-state switches internal to each communication switch. The communication switch does not parse and interpret communication protocol and message routing information. During a data acquisition phase, the communication switch couples sensors producing data to the processor node associated with the switch, to a downlink destination on the communications network, or to both. It also may couple an uplink data source to its processor node. During the data exchange phase, the switch couples its processor node or an uplink data source to a downlink destination (which may include a processor node or a robot), or couples an uplink source to its processor node and its processor node to a downlink destination.

  3. Switch for serial or parallel communication networks

    DOE Patents [OSTI]

    Crosette, D.B.

    1994-07-19

    A communication switch apparatus and a method for use in a geographically extensive serial, parallel or hybrid communication network linking a multi-processor or parallel processing system has a very low software processing overhead in order to accommodate random burst of high density data. Associated with each processor is a communication switch. A data source and a data destination, a sensor suite or robot for example, may also be associated with a switch. The configuration of the switches in the network are coordinated through a master processor node and depends on the operational phase of the multi-processor network: data acquisition, data processing, and data exchange. The master processor node passes information on the state to be assumed by each switch to the processor node associated with the switch. The processor node then operates a series of multi-state switches internal to each communication switch. The communication switch does not parse and interpret communication protocol and message routing information. During a data acquisition phase, the communication switch couples sensors producing data to the processor node associated with the switch, to a downlink destination on the communications network, or to both. It also may couple an uplink data source to its processor node. During the data exchange phase, the switch couples its processor node or an uplink data source to a downlink destination (which may include a processor node or a robot), or couples an uplink source to its processor node and its processor node to a downlink destination. 9 figs.

  4. Bandwidth provisioning in infrastructure-based wireless networks employing directional antennas

    SciTech Connect (OSTI)

    Hasiviswanthan, Shiva; Zhao, Bo; Vasudevan, Sudarshan; Yrgaonkar, Bhuvan

    2009-01-01

    Motivated by the widespread proliferation of wireless networks employing directional antennas, we study the problem of provisioning bandwidth in such networks. Given a set of subscribers and one or more access points possessing directional antennas, we formalize the problem of orienting these antennas in two fundamental settings: (1) subscriber-centric, where the objective is to fairly allocate bandwidth among the subscribers and (2) provider-centric, where the objective is to maximize the revenue generated by satisfying the bandwidth requirements of subscribers. For both the problems, we first design algorithms for a network with only one access point working under the assumption that the number of antennas does not exceed the number of noninterfering channels. Using the well-regarded lexicographic max-min fair allocation as the objective for a subscriber-centric network, we present an optimum dynamic programming algorithm. For a provider-centric network, the allocation problem turns out to be NP-hard. We present a greedy heuristic based algorithm that guarantees almost half of the optimum revenue. We later enhance both these algorithms to operate in more general networks with multiple access points and no restrictions on the relative numbers of antennas and channels. A simulation-based evaluation using OPNET demonstrates the efficacy of our approaches and provides us further in insights into these problems.

  5. Electronic logic to enhance switch reliability in detecting openings and closures of redundant switches

    DOE Patents [OSTI]

    Cooper, James A.

    1986-01-01

    A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and failsafe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

  6. Secure videoconferencing equipment switching system and method

    DOE Patents [OSTI]

    Hansen, Michael E.

    2009-01-13

    A switching system and method are provided to facilitate use of videoconference facilities over a plurality of security levels. The system includes a switch coupled to a plurality of codecs and communication networks. Audio/Visual peripheral components are connected to the switch. The switch couples control and data signals between the Audio/Visual peripheral components and one but nor both of the plurality of codecs. The switch additionally couples communication networks of the appropriate security level to each of the codecs. In this manner, a videoconferencing facility is provided for use on both secure and non-secure networks.

  7. Bandwidth Study on Energy Use and Potential Energy Saving Opportunities in U.S. Iron and Steel Manufacturing

    SciTech Connect (OSTI)

    Keith Jamison, Caroline Kramer, Sabine Brueske, Aaron Fisher

    2015-06-01

    Energy bandwidth studies of U.S. manufacturing sectors can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities. This bandwidth study examines energy consumption and potential energy savings opportunities in U.S. iron and steel manufacturing. The study relies on multiple sources to estimate the energy used in six individual process areas and select subareas, representing 82% of sector-wide energy consumption. Energy savings opportunities for individual processes and subareas are based on technologies currently in use or under development; the potential savings are then extrapolated to estimate sector-wide energy savings opportunity.

  8. Bandwidth Study on Energy Use and Potential Energy Saving Opportunities in U.S. Pulp and Paper Manufacturing

    SciTech Connect (OSTI)

    Sabine Brueske, Caroline Kramer, Aaron Fisher

    2015-06-01

    Energy bandwidth studies of U.S. manufacturing sectors can serve as foundational references in framing the range (or bandwidth) of potential energy savings opportunities. This bandwidth study examines energy consumption and potential energy savings opportunities in U.S. pulp and paper manufacturing. The study relies on multiple sources to estimate the energy used in six individual process areas, representing 52% of sector-wide energy consumption. Energy savings opportunities for individual processes are based on technologies currently in use or under development; the potential savings are then extrapolated to estimate sector-wide energy savings opportunity

  9. Efficient Schottky-like junction GaAs nanowire photodetector with 9?GHz modulation bandwidth with large active area

    SciTech Connect (OSTI)

    Seyedi, M. A. Yao, M.; O'Brien, J.; Wang, S. Y.; Dapkus, P. D.

    2014-07-28

    Efficient, low capacitance density GaAs/Indium-Tin-Oxide Schottky-like junction photodetectors with a 50??m square active are fabricated for operation in the gigahertz range. Modulation bandwidth is experimentally measured up to 10?GHz at various applied reverse biases and optical intensities to explore the effects of photo-generated carrier screening on modulation bandwidth. Last, the bandwidth dependence on applied reverse bias and optical intensity is simulated as a means to quantify average carrier velocities in nanowire material systems.

  10. Switch for Good Community Program

    SciTech Connect (OSTI)

    Crawford, Tabitha; Amran, Martha

    2013-11-19

    Switch4Good is an energy-savings program that helps residents reduce consumption from behavior changes; it was co-developed by Balfour Beatty Military Housing Management (BB) and WattzOn in Phase I of this grant. The program was offered at 11 Navy bases. Three customer engagement strategies were evaluated, and it was found that Digital Nudges (a combination of monthly consumption statements with frequent messaging via text or email) was most cost-effective.

  11. Fast superconducting magnetic field switch

    DOE Patents [OSTI]

    Goren, Y.; Mahale, N.K.

    1996-08-06

    The superconducting magnetic switch or fast kicker magnet is employed with electron stream or a bunch of electrons to rapidly change the direction of flow of the electron stream or bunch of electrons. The apparatus employs a beam tube which is coated with a film of superconducting material. The tube is cooled to a temperature below the superconducting transition temperature and is subjected to a constant magnetic field which is produced by an external dc magnet. The magnetic field produced by the dc magnet is less than the critical field for the superconducting material, thus, creating a Meissner Effect condition. A controllable fast electromagnet is used to provide a magnetic field which supplements that of the dc magnet so that when the fast magnet is energized the combined magnetic field is now greater that the critical field and the superconducting material returns to its normal state allowing the magnetic field to penetrate the tube. This produces an internal field which effects the direction of motion and of the electron stream or electron bunch. The switch can also operate as a switching mechanism for charged particles. 6 figs.

  12. Fast superconducting magnetic field switch

    DOE Patents [OSTI]

    Goren, Yehuda; Mahale, Narayan K.

    1996-01-01

    The superconducting magnetic switch or fast kicker magnet is employed with electron stream or a bunch of electrons to rapidly change the direction of flow of the electron stream or bunch of electrons. The apparatus employs a beam tube which is coated with a film of superconducting material. The tube is cooled to a temperature below the superconducting transition temperature and is subjected to a constant magnetic field which is produced by an external dc magnet. The magnetic field produced by the dc magnet is less than the critical field for the superconducting material, thus, creating a Meissner Effect condition. A controllable fast electromagnet is used to provide a magnetic field which supplements that of the dc magnet so that when the fast magnet is energized the combined magnetic field is now greater that the critical field and the superconducting material returns to its normal state allowing the magnetic field to penetrate the tube. This produces an internal field which effects the direction of motion and of the electron stream or electron bunch. The switch can also operate as a switching mechanism for charged particles.

  13. ESnet's On-Demand Bandwidth Reservation Service Wins R&D 100 Award

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    On-Demand Bandwidth Reservation Service Wins R&D 100 Award News & Publications ESnet News Media & Press Publications and Presentations Galleries ESnet Awards and Honors Contact Us Media Jon Bashor, jbashor@lbl.gov, +1 510 486 5849 or Media@es.net Technical Assistance: 1 800-33-ESnet (Inside the US) 1 800-333-7638 (Inside the US) 1 510-486-7600 (Globally) 1 510-486-7607 (Globally) Report Network Problems: trouble@es.net Provide Web Site Feedback: info@es.net ESnet's On-Demand

  14. A wide bandwidth free-electron laser with mode locking using current modulation.

    SciTech Connect (OSTI)

    Kur, E.; Dunning, D. J.; McNeil, B. W. J.; Wurtele, J.; Zholents, A. A. )

    2011-01-20

    A new scheme for mode locking a free-electron laser amplifier is proposed based on electron beam current modulation. It is found that certain properties of the original concept, based on the energy modulation of electrons, are improved including the spectral brightness of the source and the purity of the series of short pulses. Numerical comparisons are made between the new and old schemes and between a mode-locked free-electron laser and self-amplified spontaneous emission free-electron laser. Illustrative examples using a hypothetical mode-locked free-electron laser amplifier are provided. The ability to generate intense coherent radiation with a large bandwidth is demonstrated.

  15. Engineering the CernVM-Filesystem as a High Bandwidth Distributed Filesystem for Auxiliary Physics Data

    SciTech Connect (OSTI)

    Dykstra, D.; Bockelman, B.; Blomer, J.; Herner, K.; Levshina, T.; Slyz, M.

    2015-12-23

    A common use pattern in the computing models of particle physics experiments is running many distributed applications that read from a shared set of data files. We refer to this data is auxiliary data, to distinguish it from (a) event data from the detector (which tends to be different for every job), and (b) conditions data about the detector (which tends to be the same for each job in a batch of jobs). Relatively speaking, conditions data also tends to be relatively small per job where both event data and auxiliary data are larger per job. Unlike event data, auxiliary data comes from a limited working set of shared files. Since there is spatial locality of the auxiliary data access, the use case appears to be identical to that of the CernVM- Filesystem (CVMFS). However, we show that distributing auxiliary data through CVMFS causes the existing CVMFS infrastructure to perform poorly. We utilize a CVMFS client feature called 'alien cache' to cache data on existing local high-bandwidth data servers that were engineered for storing event data. This cache is shared between the worker nodes at a site and replaces caching CVMFS files on both the worker node local disks and on the site's local squids. We have tested this alien cache with the dCache NFSv4.1 interface, Lustre, and the Hadoop Distributed File System (HDFS) FUSE interface, and measured performance. In addition, we use high-bandwidth data servers at central sites to perform the CVMFS Stratum 1 function instead of the low-bandwidth web servers deployed for the CVMFS software distribution function. We have tested this using the dCache HTTP interface. As a result, we have a design for an end-to-end high-bandwidth distributed caching read-only filesystem, using existing client software already widely deployed to grid worker nodes and existing file servers already widely installed at grid sites. Files are published in a central place and are soon available on demand throughout the grid and cached locally on the site with a convenient POSIX interface. This paper discusses the details of the architecture and reports performance measurements.

  16. SWITCHING TRANSMITTER POSITIONING OF SYNCHROS

    DOE Patents [OSTI]

    Wolff, H.

    1962-03-13

    A transformer apparatus is designed for effecting the step positioning of synchro motors. The apparatus is provided with ganged switches and pre- selected contacts to permit the units and tens selection of the desired angular position for the synchro motor rotor with only the movement of two selector knobs required. With the selection thus made, the appropriate pre-selected signal is delivered to the synchro motor for positioning the rotor of the latter as selected. The transformer apparatus is divided into smaller arrangements to conform with coraputed trigonometric relations which will give the desired results. (AEC)

  17. Microwave-triggered laser switch

    DOE Patents [OSTI]

    Piltch, Martin S.

    1984-01-01

    A high-repetition rate switch for delivering short duration, high-power electrical pulses from a pulsed-charged dc power supply. The present invention utilizes a microwave-generating device such as a magnetron that is capable of producing high-power pulses at high-pulse repetition rates and fast-pulse risetimes for long periods with high reliability. The rail-gap electrodes provide a large surface area that reduces induction effects and minimizes electrode erosion. Additionally, breakdown is initiated in a continuous geometric fashion that also increases operating lifetime of the device.

  18. Microwave-triggered laser switch

    DOE Patents [OSTI]

    Piltch, M.S.

    1982-05-19

    A high-repetition rate switch is described for delivering short duration, high-powered electrical pulses from a pulsed-charged dc power supply. The present invention utilizes a microwave-generating device such as a magnetron that is capable of producing high-power pulses at high-pulse repetition rates and fast-pulse risetimes for long periods with high reliability. The rail-gap electrodes provide a large surface area that reduces induction effects and minimizes electrode erosion. Additionally, breakdown is initiated in a continuous geometric fashion that also increases operating lifetime of the device.

  19. Multiprocessor switch with selective pairing

    DOE Patents [OSTI]

    Gara, Alan; Gschwind, Michael K; Salapura, Valentina

    2014-03-11

    System, method and computer program product for a multiprocessing system to offer selective pairing of processor cores for increased processing reliability. A selective pairing facility is provided that selectively connects, i.e., pairs, multiple microprocessor or processor cores to provide one highly reliable thread (or thread group). Each paired microprocessor or processor cores that provide one highly reliable thread for high-reliability connect with a system components such as a memory "nest" (or memory hierarchy), an optional system controller, and optional interrupt controller, optional I/O or peripheral devices, etc. The memory nest is attached to a selective pairing facility via a switch or a bus

  20. Laser-triggered vacuum switch

    DOE Patents [OSTI]

    Brannon, P.J.; Cowgill, D.F.

    1990-12-18

    A laser-triggered vacuum switch has a material such as a alkali metal halide on the cathode electrode for thermally activated field emission of electrons and ions upon interaction with a laser beam, the material being in contact with the cathode with a surface facing the discharge gap. The material is preferably a mixture of KCl and Ti powders. The laser may either shine directly on the material, preferably through a hole in the anode, or be directed to the material over a fiber optic cable. 10 figs.

  1. Laser-triggered vacuum switch

    DOE Patents [OSTI]

    Brannon, Paul J.; Cowgill, Donald F.

    1990-01-01

    A laser-triggered vacuum switch has a material such as a alkali metal halide on the cathode electrode for thermally activated field emission of electrons and ions upon interaction with a laser beam, the material being in contact with the cathode with a surface facing the discharge gap. The material is preferably a mixture of KCl and Ti powders. The laser may either shine directly on the material, preferably through a hole in the anode, or be directed to the material over a fiber optic cable.

  2. Optical switching system and method

    DOE Patents [OSTI]

    Ranganathan, Radha; Gal, Michael; Taylor, P. Craig

    1992-01-01

    An optically bistable device is disclosed. The device includes a uniformly thick layer of amorphous silicon to constitute a Fabry-Perot chamber positioned to provide a target area for a probe beam. The probe beam has a maximum energy less than the energy band gap of the amorphous semiconductor. In a preferred embodiment, a multilayer dielectric mirror is positioned on the Fabry-Perot chamber to increase the finesse of switching of the device. The index of refraction of the amorphous material is thermally altered to alter the transmission of the probe beam.

  3. Laser activated diffuse discharge switch

    DOE Patents [OSTI]

    Christophorou, Loucas G. (Oak Ridge, TN); Hunter, Scott R. (Oak Ridge, TN)

    1988-01-01

    The invention is a gas mixture for a diffuse discharge switch which is capable of changing from a conducting state to an insulating state in the presence of electrons upon the introduction of laser light. The mixture is composed of a buffer gas such as nitrogen or argon and an electron attaching gas such as C.sub.6 H.sub.5 SH, C.sub.6 H.sub.5 SCH.sub.3, CH.sub.3 CHO and CF.sub.3 CHO wherein the electron attachment is brought on by indirect excitation of molecules to long-lived states by exposure to laser light.

  4. Stable nonlinear Mach-Zehnder fiber switch

    DOE Patents [OSTI]

    Digonnet, Michel J. F.; Shaw, H. John; Pantell, Richard H.; Sadowski, Robert W.

    1999-01-01

    An all-optical fiber switch is implemented within a short Mach-Zehnder interferometer configuration. The Mach-Zehnder switch is constructed to have a high temperature stability so as to minimize temperature gradients and other thermal effects which result in undesirable instability at the output of the switch. The Mach-Zehnder switch of the preferred embodiment is advantageously less than 2 cm in length between couplers to be sufficiently short to be thermally stable, and full switching is accomplished by heavily doping one or both of the arms between the couplers so as to provide a highly nonlinear region within one or both of the arms. A pump input source is used to affect the propagation characteristics of one of the arms to control the output coupling ratio of the switch. Because of the high nonlinearity of the pump input arm, low pump powers can be used, thereby alleviating difficulties and high cost associated with high pump input powers.

  5. Determining a bisection bandwidth for a multi-node data communications network

    DOE Patents [OSTI]

    Faraj, Ahmad A.

    2010-01-26

    Methods, systems, and products are disclosed for determining a bisection bandwidth for a multi-node data communications network that include: partitioning nodes in the network into a first sub-network and a second sub-network in dependence upon a topology of the network; sending, by each node in the first sub-network to a destination node in the second sub-network, a first message having a predetermined message size; receiving, by each node in the first sub-network from a source node in the second sub-network, a second message; measuring, by each node in the first sub-network, the elapsed communications time between the sending of the first message and the receiving of the second message; selecting the longest elapsed communications time; and calculating the bisection bandwidth for the network in dependence upon the number of the nodes in the first sub-network, the predetermined message size of the first test message, and the longest elapsed communications time.

  6. Magnetic switch coupling to synchronize magnetic modulators

    DOE Patents [OSTI]

    Reed, Kim W.; Kiekel, Paul

    1999-01-01

    Apparatus for synchronizing the output pulses from a pair of magnetic switches. An electrically conductive loop is provided between the pair of switches with the loop having windlings about the core of each of the magnetic switches. The magnetic coupling created by the loop removes voltage and timing variations between the outputs of the two magnetic switches caused by any of a variety of factors. The only remaining variation is a very small fixed timing offset caused by the geometry and length of the loop itself.

  7. Magnetic switch coupling to synchronize magnetic modulators

    DOE Patents [OSTI]

    Reed, K.W.; Kiekel, P.

    1999-04-27

    Apparatus for synchronizing the output pulses from a pair of magnetic switches is disclosed. An electrically conductive loop is provided between the pair of switches with the loop having windings about the core of each of the magnetic switches. The magnetic coupling created by the loop removes voltage and timing variations between the outputs of the two magnetic switches caused by any of a variety of factors. The only remaining variation is a very small fixed timing offset caused by the geometry and length of the loop itself. 13 figs.

  8. Multi-megavolt low jitter multistage switch

    DOE Patents [OSTI]

    Humphreys, D.R.; Penn, K.J. Jr.

    1985-06-19

    It is one object of the present invention to provide a multistage switch capable of holding off numerous megavolts, until triggered, from a particle beam accelerator of the type used for inertial confinement fusion. The invention provides a multistage switch having low timing jitter and capable of producing multiple spark channels for spreading current over a wider area to reduce electrode damage and increase switch lifetime. The switch has fairly uniform electric fields and a short spark gap for laser triggering and is engineered to prevent insulator breakdowns.

  9. WAP Memorandum 011: Clarification on Fuel Switching

    Broader source: Energy.gov [DOE]

    As the WAP continually develops skilled and technically proficient program personnel at the state and local levels, the DOE has decided to revise its current policy related to fuel switching in eligible homes served by the Program. WAP Grantees are now provided two options regarding the decision-making process for fuel switching to occur, detailed in WAP Memo 011.

  10. Ames Lab 101: Ultrafast Magnetic Switching

    ScienceCinema (OSTI)

    Jigang Wang

    2013-06-05

    Ames Laboratory physicists have found a new way to switch magnetism that is at least 1000 times faster than currently used in magnetic memory technologies. Magnetic switching is used to encode information in hard drives, magnetic random access memory and other computing devices. The discovery potentially opens the door to terahertz and faster memory speeds.

  11. Gas mixtures for spark gap closing switches

    DOE Patents [OSTI]

    Christophorou, Loucas G.; McCorkle, Dennis L.; Hunter, Scott R.

    1988-01-01

    Gas mixtures for use in spark gap closing switches comprised of fluorocarbons and low molecular weight, inert buffer gases. To this can be added a third gas having a low ionization potential relative to the buffer gas. The gas mixtures presented possess properties that optimized the efficiency spark gap closing switches.

  12. Gas mixtures for spark gap closing switches

    DOE Patents [OSTI]

    Christophorou, L.G.; McCorkle, D.L.; Hunter, S.R.

    1987-02-20

    Gas mixtures for use in spark gap closing switches comprised of fluorocarbons and low molecular weight, inert buffer gases. To this can be added a third gas having a low ionization potential relative to the buffer gas. The gas mixtures presented possess properties that optimized the efficiency spark gap closing switches. 6 figs.

  13. Transparent electrode for optical switch

    DOE Patents [OSTI]

    Goldhar, Julius; Henesian, Mark A.

    1986-01-01

    A low pressure gas electrode utilizing ionized gas in a glow discharge regime forms a transparent electrode for electro-optical switches. The transparent electrode comprises a low pressure gas region on both sides of the crystal. When the gas is ionized, e.g., by a glow discharge in the low pressure gas, the plasma formed is a good conductor. The gas electrode acts as a highly uniform conducting electrode. Since the plasma is transparent to a high energy laser beam passing through the crystal, the electrode is a transparent electrode. A crystal exposed from two sides to such a plasma can be charged up uniformly to any desired voltage. The plasma can be created either by the main high voltage pulser used to charge up the crystal or by auxiliary discharges or external sources of ionization. A typical configuration utilizes 10 torr argon in the discharge region adjacent to each crystal face.

  14. A DETAILED STUDY OF NON-THERMAL X-RAY PROPERTIES AND INTERSTELLAR GAS TOWARD THE γ-RAY SUPERNOVA REMNANT RX J1713.7–3946

    SciTech Connect (OSTI)

    Sano, H.; Fukuda, T.; Yoshiike, S.; Sato, J.; Horachi, H.; Kuwahara, T.; Torii, K.; Hayakawa, T.; Matsumoto, H.; Inutsuka, S.; Yamamoto, H.; Tachihara, K.; Tanaka, T.; Inoue, T.; Kawamura, A.; Okuda, T.; Mizuno, N.; Yamazaki, R.; Onishi, T.; Mizuno, A.; and others

    2015-02-01

    We have carried out a spectral analysis of the Suzaku X-ray data in the 0.4-12 keV range toward the shell-type very high-energy γ-ray supernova remnant (SNR) RX J1713.7–3946. The aims of this analysis are to estimate detailed X-rays spectral properties at a high angular resolution up to 2 arcmin and to compare them with the interstellar gas. The X-ray spectrum is non-thermal and used to calculate absorbing column density, photon index, and absorption-corrected X-ray flux. The photon index varies significantly from 2.1 to 2.9. It is shown that the X-ray intensity is well correlated with the photon index, especially in the west region, with a correlation coefficient of 0.81. The X-ray intensity tends to increase with the averaged interstellar gas density while the dispersion is relatively large. The hardest spectra, with photon indexes of less than 2.4, are found outside of the central 10 arcmin of the SNR, from the north to the southeast (∼430 arcmin{sup 2}) and from the southwest to the northwest (∼150 arcmin{sup 2}). The former region shows low interstellar gas density, while the latter shows high interstellar gas density. We present a discussion of possible scenarios that explain the distribution of the photon index and its relationship with the interstellar gas.

  15. Superconducting quantum interference device microsusceptometer balanced over a wide bandwidth for nuclear magnetic resonance applications

    SciTech Connect (OSTI)

    Vinante, A. Falferi, P.; Mezzena, R.

    2014-10-15

    Superconducting Quantum Interference Device (SQUID) microsusceptometers have been widely used to study magnetic properties of materials at microscale. As intrinsically balanced devices, they could also be exploited for direct SQUID-detection of nuclear magnetic resonance (NMR) from micron sized samples, or for SQUID readout of mechanically detected NMR from submicron sized samples. Here, we demonstrate a double balancing technique that enables achievement of very low residual imbalance of a SQUID microsusceptometer over a wide bandwidth. In particular, we can generate ac magnetic fields within the SQUID loop as large as 1 mT, for frequencies ranging from dc up to a few MHz. As an application, we demonstrate direct detection of NMR from {sup 1}H spins in a glycerol droplet placed directly on top of the 20 ?m SQUID loops.

  16. Modeling node bandwidth limits and their effects on vector combining algorithms

    SciTech Connect (OSTI)

    Littlefield, R.J.

    1992-01-13

    Each node in a message-passing multicomputer typically has several communication links. However, the maximum aggregate communication speed of a node is often less than the sum of its individual link speeds. Such computers are called node bandwidth limited (NBL). The NBL constraint is important when choosing algorithms because it can change the relative performance of different algorithms that accomplish the same task. This paper introduces a model of communication performance for NBL computers and uses the model to analyze the overall performance of three algorithms for vector combining (global sum) on the Intel Touchstone DELTA computer. Each of the three algorithms is found to be at least 33% faster than the other two for some combinations of machine size and vector length. The NBL constraint is shown to significantly affect the conditions under which each algorithm is fastest.

  17. Seismic switch for strong motion measurement

    DOE Patents [OSTI]

    Harben, P.E.; Rodgers, P.W.; Ewert, D.W.

    1995-05-30

    A seismic switching device is described that has an input signal from an existing microseismic station seismometer and a signal from a strong motion measuring instrument. The seismic switch monitors the signal level of the strong motion instrument and passes the seismometer signal to the station data telemetry and recording systems. When the strong motion instrument signal level exceeds a user set threshold level, the seismometer signal is switched out and the strong motion signal is passed to the telemetry system. The amount of time the strong motion signal is passed before switching back to the seismometer signal is user controlled between 1 and 15 seconds. If the threshold level is exceeded during a switch time period, the length of time is extended from that instant by one user set time period. 11 figs.

  18. Seismic switch for strong motion measurement

    DOE Patents [OSTI]

    Harben, Philip E. (Oakley, CA); Rodgers, Peter W. (Santa Barbara, CA); Ewert, Daniel W. (Patterson, CA)

    1995-01-01

    A seismic switching device that has an input signal from an existing microseismic station seismometer and a signal from a strong motion measuring instrument. The seismic switch monitors the signal level of the strong motion instrument and passes the seismometer signal to the station data telemetry and recording systems. When the strong motion instrument signal level exceeds a user set threshold level, the seismometer signal is switched out and the strong motion signal is passed to the telemetry system. The amount of time the strong motion signal is passed before switching back to the seismometer signal is user controlled between 1 and 15 seconds. If the threshold level is exceeded during a switch time period, the length of time is extended from that instant by one user set time period.

  19. Switched-capacitor isolated LED driver

    DOE Patents [OSTI]

    Sanders, Seth R.; Kline, Mitchell

    2016-03-22

    A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

  20. Gas mixtures for spark gap closing switches (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Gas mixtures for spark gap closing switches Title: Gas mixtures for spark gap closing switches Gas mixtures for use in spark gap closing switches comprised of fluorocarbons and low ...

  1. Ternary gas mixture for diffuse discharge switch (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Ternary gas mixture for diffuse discharge switch Title: Ternary gas mixture for diffuse discharge switch A new diffuse discharge gas switch wherein a mixture of gases is used to ...

  2. Hybrid switch for resonant power converters (Patent) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    Patent: Hybrid switch for resonant power converters Citation Details In-Document Search Title: Hybrid switch for resonant power converters You are accessing a document from the ...

  3. Robust Diamond-Based RF Switch Yields Enhanced Communication...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Robust Diamond-Based RF Switch Yields Enhanced Communication Capabilities Technology available for licesning: A radio frequency (RF) microelectromechanical system (MEMS) switch...

  4. Electrically Switched Cesium Ion Exchange

    SciTech Connect (OSTI)

    JPH Sukamto; ML Lilga; RK Orth

    1998-10-23

    This report discusses the results of work to develop Electrically Switched Ion Exchange (ESIX) for separations of ions from waste streams relevant to DOE site clean-up. ESIX combines ion exchange and electrochemistry to provide a selective, reversible method for radionuclide separation that lowers costs and minimizes secondary waste generation typically associated with conventional ion exchange. In the ESIX process, an electroactive ion exchange film is deposited onto. a high surface area electrode, and ion uptake and elution are controlled directly by modulating the potential of the film. As a result, the production of secondary waste is minimized, since the large volumes of solution associated with elution, wash, and regeneration cycles typical of standard ion exchange are not needed for the ESIX process. The document is presented in two parts: Part I, the Summary Report, discusses the objectives of the project, describes the ESIX concept and the approach taken, and summarizes the major results; Part II, the Technology Description, provides a technical description of the experimental procedures and in-depth discussions on modeling, case studies, and cost comparisons between ESIX and currently used technologies.

  5. Mercury switch with non-wettable electrodes

    DOE Patents [OSTI]

    Karnowsky, Maurice M.; Yost, Frederick G.

    1987-01-01

    A mercury switch device comprising a pool of mercury and a plurality of electrical contacts made of or coated with a non-wettable material such as titanium diboride.

  6. Script for Monitoring Infiniband Switch Links

    Energy Science and Technology Software Center (OSTI)

    2015-09-08

    This script ingests a configuration file and parses it to determine an Infiniband network topology, specifically the port information for switches. It then loops over the fabric to determine which, if any, ports do not meet their desired configuration.

  7. Nanometer resolution optical coherence tomography using broad bandwidth XUV and soft x-ray radiation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Fuchs, Silvio; Rödel, Christian; Blinne, Alexander; Zastrau, Ulf; Wünsche, Martin; Hilbert, Vinzenz; Glaser, Leif; Viefhaus, Jens; Frumker, Eugene; Corkum, Paul; et al

    2016-02-10

    Optical coherence tomography (OCT) is a non-invasive technique for cross-sectional imaging. It is particularly advantageous for applications where conventional microscopy is not able to image deeper layers of samples in a reasonable time, e.g. in fast moving, deeper lying structures. However, at infrared and optical wavelengths, which are commonly used, the axial resolution of OCT is limited to about 1 μm, even if the bandwidth of the light covers a wide spectral range. Here, we present extreme ultraviolet coherence tomography (XCT) and thus introduce a new technique for non-invasive cross-sectional imaging of nanometer structures. XCT exploits the nanometerscale coherence lengthsmore » corresponding to the spectral transmission windows of, e.g., silicon samples. The axial resolution of coherence tomography is thus improved from micrometers to a few nanometers. Tomographic imaging with an axial resolution better than 18 nm is demonstrated for layer-type nanostructures buried in a silicon substrate. Using wavelengths in the water transmission window, nanometer-scale layers of platinum are retrieved with a resolution better than 8 nm. As a result, XCT as a nondestructive method for sub-surface tomographic imaging holds promise for several applications in semiconductor metrology and imaging in the water window.« less

  8. Method and apparatus for providing high bandwidth, low noise mechanical I/O for computer systems

    DOE Patents [OSTI]

    Rosenberg, Louis B.

    1998-01-01

    A method and apparatus for providing high bandwidth and low noise mechanical input and output for computer systems. A gimbal mechanism provides two revolute degrees of freedom to an object about two axes of rotation. A linear axis member is coupled to the gimbal mechanism at the intersection of the two axes of rotation. The linear axis member is capable of being translated along a third axis to provide a third degree of freedom. The user object is coupled to the linear axis member and is thus translatable along the third axis so that the object can be moved along all three degrees of freedom. Transducers associated with the provided degrees of freedom include sensors and actuators and provide an electromechanical interface between the object and a digital processing system. Capstan drive mechanisms transmit forces between the transducers and the object. The linear axis member can also be rotated about its lengthwise axis to provide a fourth degree of freedom, and, optionally, a floating gimbal mechanism is coupled to the linear axis member to provide fifth and sixth degrees of freedom to an object. Transducer sensors are associated with the fourth, fifth, and sixth degrees of freedom. The interface is well suited for simulations of medical procedures and simulations in which an object such as a stylus or a joystick is moved and manipulated by the user.

  9. Low latency, high bandwidth data communications between compute nodes in a parallel computer

    DOE Patents [OSTI]

    Archer, Charles J.; Blocksome, Michael A.; Ratterman, Joseph D.; Smith, Brian E.

    2010-11-02

    Methods, parallel computers, and computer program products are disclosed for low latency, high bandwidth data communications between compute nodes in a parallel computer. Embodiments include receiving, by an origin direct memory access (`DMA`) engine of an origin compute node, data for transfer to a target compute node; sending, by the origin DMA engine of the origin compute node to a target DMA engine on the target compute node, a request to send (`RTS`) message; transferring, by the origin DMA engine, a predetermined portion of the data to the target compute node using memory FIFO operation; determining, by the origin DMA engine whether an acknowledgement of the RTS message has been received from the target DMA engine; if the an acknowledgement of the RTS message has not been received, transferring, by the origin DMA engine, another predetermined portion of the data to the target compute node using a memory FIFO operation; and if the acknowledgement of the RTS message has been received by the origin DMA engine, transferring, by the origin DMA engine, any remaining portion of the data to the target compute node using a direct put operation.

  10. Alternative Fuels Data Center: Colonial Williamsburg Switches to

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Alternative Transportation Colonial Williamsburg Switches to Alternative Transportation to someone by E-mail Share Alternative Fuels Data Center: Colonial Williamsburg Switches to Alternative Transportation on Facebook Tweet about Alternative Fuels Data Center: Colonial Williamsburg Switches to Alternative Transportation on Twitter Bookmark Alternative Fuels Data Center: Colonial Williamsburg Switches to Alternative Transportation on Google Bookmark Alternative Fuels Data Center: Colonial

  11. Apparatus and method for increasing the bandwidth of a laser beam

    DOE Patents [OSTI]

    Wilcox, Russell B.

    1992-01-01

    A method and apparatus using sinusoidal cross-phase modulation, provides a laser pulse having a very broad bandwidth while substantially retaining the input laser's temporal shape. The modulator may be used in a master oscillator system for a laser having a master oscillator-power amplifier (MOPA) configration. The modulator utilizes a first laser providing an output wavelength .lambda. and a second laser providing an output wavelength shifted by a small amount to .lambda.+.DELTA..lambda.. Each beam has a single, linear polarization. Each beam is coupled into a length of polarization-preserving optical fiber. The first laser beam is coupled into the optical fiber with the beam's polarization aligned with the fiber's main axis, and the second beam is coupled into the fiber with its polarization rotated from the main axis by a predetermined angle. Within the fiber, the main axis' polarization defines an interference beam and the orthogonal axis' polarization defines a signal beam. In the interference beam, the first laser beam and the parallel polarized vector component of the other beam interfere to create areas of high and low intensity, which modulates the signal beam by cross phase modulation. Upon exit from the optical fiber, the beams are coupled out and the modulated signal beam is separated out by a polarization selector. The signal beam can be applied to coherence reducing systems to provide an output that is temporally and spatially incoherent. The U.S. Government has rights in this invention pursuant to Contract No. W7405-ENG-48 between the U.S. Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.

  12. Final Report on DOE Project entitled Dynamic Optimized Advanced Scheduling of Bandwidth Demands for Large-Scale Science Applications

    SciTech Connect (OSTI)

    Ramamurthy, Byravamurthy

    2014-05-05

    In this project, developed scheduling frameworks for dynamic bandwidth demands for large-scale science applications. In particular, we developed scheduling algorithms for dynamic bandwidth demands in this project. Apart from theoretical approaches such as Integer Linear Programming, Tabu Search and Genetic Algorithm heuristics, we have utilized practical data from ESnet OSCARS project (from our DOE lab partners) to conduct realistic simulations of our approaches. We have disseminated our work through conference paper presentations and journal papers and a book chapter. In this project we addressed the problem of scheduling of lightpaths over optical wavelength division multiplexed (WDM) networks. We published several conference papers and journal papers on this topic. We also addressed the problems of joint allocation of computing, storage and networking resources in Grid/Cloud networks and proposed energy-efficient mechanisms for operatin optical WDM networks.

  13. Micro electro mechanical system optical switching

    DOE Patents [OSTI]

    Thorson, Kevin J; Stevens, Rick C; Kryzak, Charles J; Leininger, Brian S; Kornrumpf, William P; Forman, Glenn A; Iannotti, Joseph A; Spahn, Olga B; Cowan, William D; Dagel, Daryl J

    2013-12-17

    The present disclosure includes apparatus, system, and method embodiments that provide micro electo mechanical system optical switching and methods of manufacturing switches. For example, one optical switch embodiment includes at least one micro electro mechanical system type pivot mirror structure disposed along a path of an optical signal, the structure having a mirror and an actuator, and the mirror having a pivot axis along a first edge and having a second edge rotatable with respect to the pivot axis, the mirror being capable of and arranged to be actuated to pivot betweeen a position parallel to a plane of an optical signal and a position substantially normal to the plane of the optical signal.

  14. Compact high voltage solid state switch

    DOE Patents [OSTI]

    Glidden, Steven C.

    2003-09-23

    A compact, solid state, high voltage switch capable of high conduction current with a high rate of current risetime (high di/dt) that can be used to replace thyratrons in existing and new applications. The switch has multiple thyristors packaged in a single enclosure. Each thyristor has its own gate drive circuit that circuit obtains its energy from the energy that is being switched in the main circuit. The gate drives are triggered with a low voltage, low current pulse isolated by a small inexpensive transformer. The gate circuits can also be triggered with an optical signal, eliminating the trigger transformer altogether. This approach makes it easier to connect many thyristors in series to obtain the hold off voltages of greater than 80 kV.

  15. Nanoeletromechanical switch and logic circuits formed therefrom

    DOE Patents [OSTI]

    Nordquist, Christopher D.; Czaplewski, David A.

    2010-05-18

    A nanoelectromechanical (NEM) switch is formed on a substrate with a source electrode containing a suspended electrically-conductive beam which is anchored to the substrate at each end. This beam, which can be formed of ruthenium, bows laterally in response to a voltage applied between a pair of gate electrodes and the source electrode to form an electrical connection between the source electrode and a drain electrode located near a midpoint of the beam. Another pair of gate electrodes and another drain electrode can be located on an opposite side of the beam to allow for switching in an opposite direction. The NEM switch can be used to form digital logic circuits including NAND gates, NOR gates, programmable logic gates, and SRAM and DRAM memory cells which can be used in place of conventional CMOS circuits, or in combination therewith.

  16. Magnetic switch for reactor control rod. [LMFBR

    DOE Patents [OSTI]

    Germer, J.H.

    1982-09-30

    A magnetic reed switch assembly is described for activating an electromagnetic grapple utilized to hold a control rod in position above a reactor core. In normal operation the magnetic field of a permanent magnet is short-circuited by a magnetic shunt, diverting the magnetic field away from the reed switch. The magnetic shunt is made of a material having a Curie-point at the desired release temperature. Above that temperature the material loses its ferromagnetic properties, and the magnetic path is diverted to the reed switch which closes and short-circuits the control circuit for the control rod electro-magnetic grapple which allows the control rod to drop into the reactor core for controlling the reactivity of the core.

  17. Magnetic switch for reactor control rod

    DOE Patents [OSTI]

    Germer, John H.

    1986-01-01

    A magnetic reed switch assembly for activating an electromagnetic grapple utilized to hold a control rod in position above a reactor core. In normal operation the magnetic field of a permanent magnet is short-circuited by a magnetic shunt, diverting the magnetic field away from the reed switch. The magnetic shunt is made of a material having a Curie-point at the desired release temperature. Above that temperature the material loses its ferromagnetic properties, and the magnetic path is diverted to the reed switch which closes and short-circuits the control circuit for the control rod electromagnetic grapple which allows the control rod to drop into the reactor core for controlling the reactivity of the core.

  18. Manufacturing fuel-switching capability, 1988

    SciTech Connect (OSTI)

    Not Available

    1991-09-01

    Historically, about one-third of all energy consumed in the United States has been used by manufacturers. About one-quarter of manufacturing energy is used as feedstocks and raw material inputs that are converted into nonenergy products; the remainder is used for its energy content. During 1988, the most recent year for which data are available, manufacturers consumed 15.5 quadrillion British thermal units (Btu) of energy to produce heat and power and to generate electricity. The manufacturing sector also has widespread capabilities to switch from one fuel to another for either economic or emergency reasons. There are numerous ways to define fuel switching. For the purposes of the Manufacturing Energy Consumption Survey (MECS), fuel switching is defined as the capability to substitute one energy source for another within 30 days with no significant modifications to the fuel-consuming equipment, while keeping production constant. Fuel-switching capability allows manufacturers substantial flexibility in choosing their mix of energy sources. The consumption of a given energy source can be maximized if all possible switching into that energy source takes place. The estimates in this report are based on data collected on the 1988 Manufacturing Energy Consumption Survey (MECS), Forms 846 (A through C). The EIA conducts this national sample survey of manufacturing energy consumption on a triennial basis. The MECS is the only comprehensive source of national-level data on energy-related information for the manufacturing industries. The MECS was first conducted in 1986 to collect data for 1985. This report presents information on the fuel-switching capabilities of manufacturers in 1988. This report is the second of a series based on the 1988 MECS. 8 figs., 31 tabs.

  19. Explosive-driven, high speed, arcless switch

    DOE Patents [OSTI]

    Skogmo, P.J.; Tucker, T.J.

    1987-07-14

    An explosive-actuated, fast-acting arcless switch contains a highly conductive foil to carry high currents positioned adjacent a dielectric surface within a casing. At one side of the foil opposite the dielectric surface is an explosive which, when detonated, drives the conductive foil against the dielectric surface. A pattern of grooves in the dielectric surface ruptures the foil to establish a rupture path having a pattern corresponding to the pattern of the grooves. The impedance of the ruptured foil is greater than that of the original foil to divert high current to a load. Planar and cylindrical embodiments of the switch are disclosed. 7 figs.

  20. Explosive-driven, high speed, arcless switch

    DOE Patents [OSTI]

    Skogmo, Phillip J.; Tucker, Tillman J.

    1987-01-01

    An explosive-actuated, fast-acting arcless switch contains a highly conductive foil to carry high currents positioned adjacent a dielectric surface within a casing. At one side of the foil opposite the dielectric surface is an explosive which, when detonated, drives the conductive foil against the dielectric surface. A pattern of grooves in the dielectric surface ruptures the foil to establish a rupture path having a pattern corresponding to the pattern of the grooves. The impedance of the ruptured foil is greater than that of the original foil to divert high current to a load. Planar and cylindrical embodiments of the switch are disclosed.

  1. Optically triggered high voltage switch network and method for switching a high voltage

    DOE Patents [OSTI]

    El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  2. Q-switched Raman laser system

    DOE Patents [OSTI]

    George, E.V.

    Method and apparatus for use of a Raman or Brillouin switch together with a conventional laser and a saturable absorber that is rapidly bleached at a predeterimined frequency nu = nu/sub O/, to ultimately produce a Raman or Brillouin pulse at frequency nu = nu/sub O/ +- nu /sub Stokes/.

  3. Q-Switched Raman laser system

    DOE Patents [OSTI]

    George, E. Victor

    1985-01-01

    Method and apparatus for use of a Raman or Brillouin switch together with a conventional laser and a saturable absorber that is rapidly bleached at a predetermined frequency .nu.=.nu..sub.0, to ultimately produce a Raman or Brillouin pulse at frequency .nu.=.nu..sub.0 .+-..nu..sub.Stokes.

  4. Isolated and soft-switched power converter

    DOE Patents [OSTI]

    Peng, Fang Zheng; Adams, Donald Joe

    2002-01-01

    An isolated and soft-switched power converter is used for DC/DC and DC/DC/AC power conversion. The power converter includes two resonant tank circuits coupled back-to-back through an isolation transformer. Each resonant tank circuit includes a pair of resonant capacitors connected in series as a resonant leg, a pair of tank capacitors connected in series as a tank leg, and a pair of switching devices with anti-parallel clamping diodes coupled in series as resonant switches and clamping devices for the resonant leg. The power converter is well suited for DC/DC and DC/DC/AC power conversion applications in which high-voltage isolation, DC to DC voltage boost, bidirectional power flow, and a minimal number of conventional switching components are important design objectives. For example, the power converter is especially well suited to electric vehicle applications and load-side electric generation and storage systems, and other applications in which these objectives are important. The power converter may be used for many different applications, including electric vehicles, hybrid combustion/electric vehicles, fuel-cell powered vehicles with low-voltage starting, remote power sources utilizing low-voltage DC power sources, such as photovoltaics and others, electric power backup systems, and load-side electric storage and generation systems.

  5. Optically initiated silicon carbide high voltage switch

    DOE Patents [OSTI]

    Caporaso, George J.; Sampayan, Stephen E.; Sullivan, James S.; Sanders; David M.

    2011-02-22

    An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

  6. Interconnecting network for switching data packets and method for switching data packets

    DOE Patents [OSTI]

    Benner, Alan Frederic; Minkenberg, Cyriel Johan Agnes; Stunkel, Craig Brian

    2010-05-25

    The interconnecting network for switching data packets, having data and flow control information, comprises a local packet switch element (S1) with local input buffers (I(1,1) . . . I(1,y)) for buffering the incoming data packets, a remote packet switch element (S2) with remote input buffers (I(2,1) . . . I(2,y)) for buffering the incoming data packets, and data lines (L) for interconnecting the local and the remote packet switch elements (S1, S2). The interconnecting network further comprises a local and a remote arbiter (A1, A2) which are connected via control lines (CL) to the input buffers (I(1,1) . . . I(1,y), I(2,1) . . . I(2,y)), and which are formed such that they can provide that the flow control information is transmitted via the data lines (L) and the control lines (CL).

  7. Nanomechanical switch for integration with CMOS logic. (Journal...

    Office of Scientific and Technical Information (OSTI)

    Country of Publication: United States Language: English Subject: 42 ENGINEERING; 77 NANOSCIENCE AND NANOTECHNOLOGY; FABRICATION; PERFORMANCE; SWITCHES; TESTING; NANOSTRUCTURES; ...

  8. RF-MEMS capacitive switches with high reliability

    DOE Patents [OSTI]

    Goldsmith, Charles L.; Auciello, Orlando H.; Carlisle, John A.; Sampath, Suresh; Sumant, Anirudha V.; Carpick, Robert W.; Hwang, James; Mancini, Derrick C.; Gudeman, Chris

    2013-09-03

    A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

  9. A 15 MHz bandwidth, 60 V{sub pp}, low distortion power amplifier for driving high power piezoelectric transducers

    SciTech Connect (OSTI)

    Capineri, Lorenzo

    2014-10-01

    This paper presents the design and the realization of a linear power amplifier with large bandwidth (15 MHz) capable of driving low impedance ultrasonic transducers. The output current driving capability (up to 5 A) and low distortion makes it suitable for new research applications using high power ultrasound in the medical and industrial fields. The electronic design approach is modular so that the characteristics can be scaled according to specific applications and implementation details for the circuit layout are reported. Finally the characterization of the power amplifier module is presented.

  10. Float level switch for a nuclear power plant containment vessel

    DOE Patents [OSTI]

    Powell, J.G.

    1993-11-16

    This invention is a float level switch used to sense rise or drop in water level in a containment vessel of a nuclear power plant during a loss of coolant accident. The essential components of the device are a guide tube, a reed switch inside the guide tube, a float containing a magnetic portion that activates a reed switch, and metal-sheathed, ceramic-insulated conductors connecting the reed switch to a monitoring system outside the containment vessel. Special materials and special sealing techniques prevent failure of components and allow the float level switch to be connected to a monitoring system outside the containment vessel. 1 figures.

  11. Float level switch for a nuclear power plant containment vessel

    DOE Patents [OSTI]

    Powell, James G.

    1993-01-01

    This invention is a float level switch used to sense rise or drop in water level in a containment vessel of a nuclear power plant during a loss of coolant accident. The essential components of the device are a guide tube, a reed switch inside the guide tube, a float containing a magnetic portion that activates a reed switch, and metal-sheathed, ceramic-insulated conductors connecting the reed switch to a monitoring system outside the containment vessel. Special materials and special sealing techniques prevent failure of components and allow the float level switch to be connected to a monitoring system outside the containment vessel.

  12. Gas mixture for diffuse-discharge switch

    DOE Patents [OSTI]

    Christophorou, L.G.; Carter, J.G.; Hunter, S.R.

    1982-08-31

    Gaseous medium in a diffuse-discharge switch of a high-energy pulse generator is formed of argon combined with a compound selected from the group consisting of CF/sub 4/, C/sub 2/F/sub 6/, C/sub 3/F/sub 8/, n-C/sub 4/F/sub 10/, WF/sub 6/, (CF/sub 3/)/sub 2/S and (CF/sub 3/)/sub 2/O.

  13. Gas mixture for diffuse-discharge switch

    DOE Patents [OSTI]

    Christophorou, Loucas G. (Oak Ridge, TN); Carter, James G. (Knoxville, TN); Hunter, Scott R. (Oak Ridge, TN)

    1984-01-01

    Gaseous medium in a diffuse-discharge switch of a high-energy pulse generator is formed of argon combined with a compound selected from the group consisting of CF.sub.4, C.sub.2 F.sub.6, C.sub.3 F.sub.8, n-C.sub.4 F.sub.10, WF.sub.6, (CF.sub.3).sub.2 S and (CF.sub.3).sub.2 O.

  14. Multiple acousto-optic q-switch

    DOE Patents [OSTI]

    Deason, Vance A.

    1993-12-07

    An improved dynamic moire interferometer comprised of a lasing medium providing a plurality of beams of coherent light, a multiple q-switch producing multiple trains of 100,000 or more pulses per second, a combining means collimating multiple trains of pulses into substantially a single train and directing beams to specimen gratings affixed to a test material, and a controller, triggering and sequencing the emission of the pulses with the occurrence and recording of a dynamic loading event.

  15. Multiple acousto-optic q-switch

    DOE Patents [OSTI]

    Deason, Vance A.

    1993-01-01

    An improved dynamic moire interferometer comprised of a lasing medium providing a plurality of beams of coherent light, a multiple q-switch producing multiple trains of 100,000 or more pulses per second, a combining means collimating multiple trains of pulses into substantially a single train and directing beams to specimen gratings affixed to a test material, and a controller, triggering and sequencing the emission of the pulses with the occurrence and recording of a dynamic loading event.

  16. Methods for resistive switching of memristors

    DOE Patents [OSTI]

    Mickel, Patrick R.; James, Conrad D.; Lohn, Andrew; Marinella, Matthew; Hsia, Alexander H.

    2016-05-10

    The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an isothermal model to the power-resistance measurement in order to determine one or more parameters of the device (e.g., filament state).

  17. HIGH VOLTAGE, HIGH CURRENT SPARK GAP SWITCH

    DOE Patents [OSTI]

    Dike, R.S.; Lier, D.W.; Schofield, A.E.; Tuck, J.L.

    1962-04-17

    A high voltage and current spark gap switch comprising two main electrodes insulatingly supported in opposed spaced relationship and a middle electrode supported medially between the main electrodes and symmetrically about the median line of the main electrodes is described. The middle electrode has a perforation aligned with the median line and an irradiation electrode insulatingly supported in the body of the middle electrode normal to the median line and protruding into the perforation. (AEC)

  18. High-bandwidth Modulation of H2/Syngas Fuel to Control Combustion Dynamics in Micro-Mixing Lean Premix Systems

    SciTech Connect (OSTI)

    Jeff Melzak; Tim Lieuwen; Adel Mansour

    2012-01-31

    The goal of this program was to develop and demonstrate fuel injection technologies that will facilitate the development of cost-effective turbine engines for Integrated Gasification Combined Cycle (IGCC) power plants, while improving efficiency and reducing emissions. The program involved developing a next-generation multi-point injector with enhanced stability performance for lean premix turbine systems that burn hydrogen (H2) or synthesis gas (syngas) fuels. A previously developed injector that demonstrated superior emissions performance was improved to enhance static flame stability through zone staging and pilot sheltering. In addition, piezo valve technology was implemented to investigate the potential for enhanced dynamic stability through high-bandwidth modulation of the fuel supply. Prototype injector and valve hardware were tested in an atmospheric combustion facility. The program was successful in meeting its objectives. Specifically, the following was accomplished: Demonstrated improvement of lean operability of the Parker multi-point injector through staging of fuel flow and primary zone sheltering; Developed a piezo valve capable of proportional and high-bandwidth modulation of gaseous fuel flow at frequencies as high as 500 Hz; The valve was shown to be capable of effecting changes to flame dynamics, heat release, and acoustic signature of an atmospheric combustor. The latter achievement indicates the viability of the Parker piezo valve technology for use in future adaptively controlled systems for the mitigation of combustion instabilities, particularly for attenuating combustion dynamics under ultra-lean conditions.

  19. Bandwidth optimization of femtosecond pure-rotational coherent anti-Stokes Raman scattering by pump/Stokes spectral focusing.

    SciTech Connect (OSTI)

    Kearney, Sean Patrick

    2014-07-01

    A simple spectral focusing scheme for bandwidth optimization of gas-phase rotational coherent anti-Stokes Raman scattering (CARS) spectra is presented. The method is useful when femtosecond pump/Stokes preparation of the Raman coherence is utilized. The approach is of practical utility when working with laser pulses that are not strictly transform limited, or when windows or other sources of pulse chirp may be present in the experiment. A delay between the femtosecond preparation pulses is introduced to shift the maximum Raman preparation away from zero frequency and toward the Stokes or anti-Stokes side of the spectrum with no loss in total preparation bandwidth. Shifts of 100 cm-1 or more are attainable and allow for enhanced detection of high-energy (150-300 cm-1) rotational Raman transitions at near transform-limited optimum sensitivity. A simple theoretical treatment for the case of identical pump and Stokes pulses with linear frequency chirp is presented. The approach is then demonstrated experimentally for typical levels of transform-limited laser performance obtained our laboratory with nonresonant CARS in argon and Raman-resonant spectra from a lean H2/air flat flame.

  20. Bandwidth optimization of femtosecond pure-rotational coherent anti-Stokes Raman scattering by pump/Stokes spectral focusing.

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kearney, Sean Patrick

    2014-07-01

    A simple spectral focusing scheme for bandwidth optimization of gas-phase rotational coherent anti-Stokes Raman scattering (CARS) spectra is presented. The method is useful when femtosecond pump/Stokes preparation of the Raman coherence is utilized. The approach is of practical utility when working with laser pulses that are not strictly transform limited, or when windows or other sources of pulse chirp may be present in the experiment. A delay between the femtosecond preparation pulses is introduced to shift the maximum Raman preparation away from zero frequency and toward the Stokes or anti-Stokes side of the spectrum with no loss in total preparationmore » bandwidth. Shifts of 100 cm-1 or more are attainable and allow for enhanced detection of high-energy (150-300 cm-1) rotational Raman transitions at near transform-limited optimum sensitivity. A simple theoretical treatment for the case of identical pump and Stokes pulses with linear frequency chirp is presented. The approach is then demonstrated experimentally for typical levels of transform-limited laser performance obtained our laboratory with nonresonant CARS in argon and Raman-resonant spectra from a lean H2/air flat flame.« less

  1. Switch Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in LESCO 18 as a Transient Superconducting Phase is Formed Bill Schlotter or Josh Turner CXI L273 SPENCE,JOHN Dynamics of electron transfer: PSIferredoxin Sebastien Boutet...

  2. Switch Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Swimming Pool Covers Swimming Pool Covers Covering a pool when it is not in use is the single most effective means of reducing pool heating costs. | Photo courtesy of Aquatherm Industries. Covering a pool when it is not in use is the single most effective means of reducing pool heating costs. | Photo courtesy of Aquatherm Industries. You can significantly reduce swimming pool heating costs by using a pool cover. On the following pages, see the tables showing the costs of heating pools with and

  3. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  4. Elastomeric organic material for switching application

    SciTech Connect (OSTI)

    Shiju, K. E-mail: pravymon@gmail.com Praveen, T. E-mail: pravymon@gmail.com Preedep, P. E-mail: pravymon@gmail.com

    2014-10-15

    Organic Electronic devices like OLED, Organic Solar Cells etc are promising as, cost effective alternatives to their inorganic counterparts due to various reasons. However the organic semiconductors currently available are not attractive with respect to their high cost and intricate synthesis protocols. Here we demonstrate that Natural Rubber has the potential to become a cost effective solution to this. Here an attempt has been made to fabricate iodine doped poly isoprene based switching device. In this work Poly methyl methacrylate is used as dielectric layer and Aluminium are employed as electrodes.

  5. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  6. High voltage switches having one or more floating conductor layers

    DOE Patents [OSTI]

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  7. Organic solid state switches incorporating porphyrin compounds and method for producing organic solid state optical switches

    DOE Patents [OSTI]

    Wasielewski, M.R.; Gaines, G.L.; Niemczyk, M.P.; Johnson, D.G.; Gosztola, D.J.; O`Neil, M.P.

    1996-07-23

    A light-intensity dependent molecular switch comprised of a compound which shuttles an electron or a plurality of electrons from a plurality of electron donors to an electron acceptor upon being stimulated with light of predetermined wavelengths, said donors selected from porphyrins and other compounds, and a method for making said compound are disclosed. 4 figs.

  8. Organic solid state switches incorporating porphyrin compounds and method for producing organic solid state optical switches

    DOE Patents [OSTI]

    Wasielewski, Michael R.; Gaines, George L.; Niemczyk, Mark P.; Johnson, Douglas G.; Gosztola, David J.; O'Neil, Michael P.

    1996-01-01

    A light-intensity dependent molecular switch comprised of a compound which shuttles an electron or a plurality of electrons from a plurality of electron donors to an electron acceptor upon being stimulated with light of predetermined wavelengths, said donors selected from porphyrins and other compounds, and a method for making said compound.

  9. Organic solid state optical switches and method for producing organic solid state optical switches

    DOE Patents [OSTI]

    Wasielewski, M.R.; Gaines, G.L.; Niemczyk, M.P.; Johnson, D.G.; Gosztola, D.J.; O`Neil, M.P.

    1993-01-01

    This invention consists of a light-intensity dependent molecular switch comprised of a compound which shuttles an electron or a plurality of electrons from a plurality of electron donors to an electron acceptor upon being stimulated with light of predetermined wavelengths, and a method for making said compound.

  10. Massachusetts Schools Switch to Wood Pellets | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Massachusetts Schools Switch to Wood Pellets Massachusetts Schools Switch to Wood Pellets August 20, 2015 - 5:22pm Addthis Art created by a student at John Briggs Elementary School as part of their recent Green Ceremony. John Briggs Elementary is one of the Massachusetts schools switching their heating fuel source from petroleum based fuels to wood pellets. Art created by a student at John Briggs Elementary School as part of their recent Green Ceremony. John Briggs Elementary is one of the

  11. Current-level triggered plasma-opening switch

    DOE Patents [OSTI]

    Mendel, Clifford W.

    1989-01-01

    An opening switch for very high power electrical pulses uses a slow magnetic field to confine a plasma across a gap between two electrodes. The plasma conducts the electric pulse across the gap while the switch is closed. A magnetic field generated by the pulse repels the slow magnetic field from the negative electrode to push the plasma from the electrode, opening the switch. A plurality of radial vanes may be used to enhance the slow magnetic field.

  12. Current-level triggered plasma-opening switch

    DOE Patents [OSTI]

    Mendel, C.W.

    1987-06-29

    An opening switch for very high power electrical pulses uses a slow magnetic field to confine a plasma across a gap between two electrodes. The plasma conducts the electric pulse across the gap while the switch is closed. A magnetic field generated by the pulse repels the slow magnetic field from the negative electrode to push the plasma from the electrode, opening the switch. A plurality of radial vanes may be used to enhance the slow magnetic field. 5 figs.

  13. Single-crystalline monolayer and multilayer graphene nano switches

    SciTech Connect (OSTI)

    Li, Peng; Cui, Tianhong; Jing, Gaoshan; Zhang, Bo; Sando, Shota

    2014-03-17

    Growth of monolayer, bi-layer, and tri-layer single-crystalline graphene (SCG) using chemical vapor deposition method is reported. SCG's mechanical properties and single-crystalline nature were characterized and verified by atomic force microscope and Raman spectroscopy. Electro-mechanical switches based on mono- and bi-layer SCG were fabricated, and the superb properties of SCG enable the switches to operate at pull-in voltage as low as 1 V, and high switching speed about 100 ns. These devices exhibit lifetime without a breakdown of over 5000 cycles, far more durable than any other graphene nanoelectromechanical system switches reported.

  14. Modeling Combustion Control for High Power Diesel Mode Switching...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Modeling Combustion Control for High Power Diesel Mode Switching Poster presentation given at the 16th Directions in Engine-Efficiency and Emissions Research (DEER) Conference in ...

  15. A New Class of Switched Reluctance Motors without Permanent Magnets...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Motors without Permanent Magnets A New Class of Switched Reluctance Motors without Permanent Magnets 2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program ...

  16. Electrocaloric devices based on thini-film heat switches

    SciTech Connect (OSTI)

    Epstein, Richard I; Malloy, Kevin J

    2009-01-01

    We describe a new approach to refrigeration and electrical generation that exploits the attractive properties of thin films of electrocaloric materials. Layers of electrocaloric material coupled with thin-film heat switches can work as either refrigerators or electrical generators, depending on the phasing of the applied voltages and heat switching. With heat switches based on thin layers of liquid crystals, the efficiency of these thin-film heat engines can be at least as high as that of current thermoelectric devices. Advanced heat switches would enable thin-film heat engines to outperform conventional vaporcompression devices.

  17. Multi-gap high impedance plasma opening switch

    DOE Patents [OSTI]

    Mason, R.J.

    1996-10-22

    A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode is disclosed. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources. 12 figs.

  18. Multi-gap high impedance plasma opening switch

    DOE Patents [OSTI]

    Mason, Rodney J.

    1996-01-01

    A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources.

  19. DNA-mediated excitonic upconversion FRET switching

    SciTech Connect (OSTI)

    Kellis, Donald L.; Rehn, Sarah M.; Cannon, Brittany L.; Davis, Paul H.; Graugnard, Elton; Lee, Jeunghoon; Yurke, Bernard; Knowlton, William B.

    2015-11-17

    Excitonics is a rapidly expanding field of nanophotonics in which the harvesting of photons, ensuing creation and transport of excitons via Förster resonant energy transfer (FRET), and subsequent charge separation or photon emission has led to the demonstration of excitonic wires, switches, Boolean logic and light harvesting antennas for many applications. FRET funnels excitons down an energy gradient resulting in energy loss with each step along the pathway. Conversely, excitonic energy up conversion via up conversion nanoparticles (UCNPs), although currently inefficient, serves as an energy ratchet to boost the exciton energy. Although FRET-based up conversion has been demonstrated, it suffers from low FRET efficiency and lacks the ability to modulate the FRET. We have engineered an up conversion FRET-based switch by combining lanthanide-doped UCNPs and fluorophores that demonstrates excitonic energy up conversion by nearly a factor of 2, an excited state donor to acceptor FRET efficiency of nearly 25%, and an acceptor fluorophore quantum efficiency that is close to unity. These findings offer a promising path for energy up conversion in nanophotonic applications including artificial light harvesting, excitonic circuits, photovoltaics, nanomedicine, and optoelectronics.

  20. DNA-mediated excitonic upconversion FRET switching

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kellis, Donald L.; Rehn, Sarah M.; Cannon, Brittany L.; Davis, Paul H.; Graugnard, Elton; Lee, Jeunghoon; Yurke, Bernard; Knowlton, William B.

    2015-11-17

    Excitonics is a rapidly expanding field of nanophotonics in which the harvesting of photons, ensuing creation and transport of excitons via Förster resonant energy transfer (FRET), and subsequent charge separation or photon emission has led to the demonstration of excitonic wires, switches, Boolean logic and light harvesting antennas for many applications. FRET funnels excitons down an energy gradient resulting in energy loss with each step along the pathway. Conversely, excitonic energy up conversion via up conversion nanoparticles (UCNPs), although currently inefficient, serves as an energy ratchet to boost the exciton energy. Although FRET-based up conversion has been demonstrated, it suffersmore » from low FRET efficiency and lacks the ability to modulate the FRET. We have engineered an up conversion FRET-based switch by combining lanthanide-doped UCNPs and fluorophores that demonstrates excitonic energy up conversion by nearly a factor of 2, an excited state donor to acceptor FRET efficiency of nearly 25%, and an acceptor fluorophore quantum efficiency that is close to unity. These findings offer a promising path for energy up conversion in nanophotonic applications including artificial light harvesting, excitonic circuits, photovoltaics, nanomedicine, and optoelectronics.« less

  1. DC switching regulated power supply for driving an inductive load

    DOE Patents [OSTI]

    Dyer, G.R.

    1983-11-29

    A dc switching regulated power supply for driving an inductive load is provided. The regulator basic circuit is a bridge arrangement of diodes and transistors. First and second opposite legs of the bridge are formed by first and second parallel-connected transistor arrays, respectively, while the third and fourth legs of the bridge are formed by appropriately connected first and second parallel connected diode arrays, respectively. A dc power supply is connected to the input of the bridge and the output is connected to the load. A servo controller is provided to control the switching rate of the transistors to maintain a desired current to the load. The regulator may be operated in three stages or modes: (1) for current runup in the load, both first and second transistor switch arrays are turned on and current is supplied to the load through both transistor arrays. (2) When load current reaches the desired level, the first switch is turned off, and load current flywheels through the second switch array and the fourth leg diode array connecting the second switch array in series with the load. Current is maintained by alternating between modes 1 and 2 at a suitable duty cycle and switching rate set by the controller. (3) Rapid current rundown is accomplished by turning both switch arrays off, allowing load current to be dumped back into the source through the third and fourth diode arrays connecting the source in series opposition with the load to recover energy from the inductive load.

  2. DC switching regulated power supply for driving an inductive load

    DOE Patents [OSTI]

    Dyer, George R.

    1986-01-01

    A power supply for driving an inductive load current from a dc power supply hrough a regulator circuit including a bridge arrangement of diodes and switching transistors controlled by a servo controller which regulates switching in response to the load current to maintain a selected load current. First and second opposite legs of the bridge are formed by first and second parallel-connected transistor arrays, respectively, while the third and fourth legs of the bridge are formed by appropriately connected first and second parallel connected diode arrays, respectively. The regulator may be operated in three "stages" or modes: (1) For current runup in the load, both first and second transistor switch arrays are turned "on" and current is supplied to the load through both transistor arrays. (2) When load current reaches the desired level, the first switch is turned "off", and load current "flywheels" through the second switch array and the fourth leg diode array connecting the second switch array in series with the load. Current is maintained by alternating between modes 1 and 2 at a suitable duty cycle and switching rate set by the controller. (3) Rapid current rundown is accomplished by turning both switch arrays "off", allowing load current to be dumped back into the source through the third and fourth diode arrays connecting the source in series opposition with the load to recover energy from the inductive load. The three operating states are controlled automatically by the controller.

  3. Permanent-magnet switched-flux machine

    DOE Patents [OSTI]

    Trzynadlowski, Andrzej M.; Qin, Ling

    2012-02-21

    A permanent-magnet switched-flux (PMSF) device has an outer rotor mounted to a shaft about a central axis extending axially through the PMSF device. First and second pluralities of permanent-magnets (PMs) are respectively mounted in first and second circles, radially outwardly in first and second transverse planes extending from first and second sections of the central axis adjacent to an inner surface of the outer rotor. An inner stator is coupled to the shaft and has i) a stator core having a core axis co-axial with the central axis; and ii) first and second pluralities of stator poles mounted in first and second circles, radially outwardly from the stator core axis in the first and second transverse planes. The first and second pluralities of PMs each include PMs of alternating polarity.

  4. Semiconductor switch geometry with electric field shaping

    DOE Patents [OSTI]

    Booth, R.; Pocha, M.D.

    1994-08-23

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

  5. Semiconductor switch geometry with electric field shaping

    DOE Patents [OSTI]

    Booth, Rex; Pocha, Michael D.

    1994-01-01

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

  6. Path planning during combustion mode switch

    DOE Patents [OSTI]

    Jiang, Li; Ravi, Nikhil

    2015-12-29

    Systems and methods are provided for transitioning between a first combustion mode and a second combustion mode in an internal combustion engine. A current operating point of the engine is identified and a target operating point for the internal combustion engine in the second combustion mode is also determined. A predefined optimized transition operating point is selected from memory. While operating in the first combustion mode, one or more engine actuator settings are adjusted to cause the operating point of the internal combustion engine to approach the selected optimized transition operating point. When the engine is operating at the selected optimized transition operating point, the combustion mode is switched from the first combustion mode to the second combustion mode. While operating in the second combustion mode, one or more engine actuator settings are adjusted to cause the operating point of the internal combustion to approach the target operating point.

  7. Eddy-current-damped microelectromechanical switch

    DOE Patents [OSTI]

    Christenson, Todd R.; Polosky, Marc A.

    2009-12-15

    A microelectromechanical (MEM) device is disclosed that includes a shuttle suspended for movement above a substrate. A plurality of permanent magnets in the shuttle of the MEM device interact with a metal plate which forms the substrate or a metal portion thereof to provide an eddy-current damping of the shuttle, thereby making the shuttle responsive to changes in acceleration or velocity of the MEM device. Alternately, the permanent magnets can be located in the substrate, and the metal portion can form the shuttle. An electrical switch closure in the MEM device can occur in response to a predetermined acceleration-time event. The MEM device, which can be fabricated either by micromachining or LIGA, can be used for sensing an acceleration or deceleration event (e.g. in automotive applications such as airbag deployment or seat belt retraction).

  8. Eddy-current-damped microelectromechanical switch

    DOE Patents [OSTI]

    Christenson, Todd R.; Polosky, Marc A.

    2007-10-30

    A microelectromechanical (MEM) device is disclosed that includes a shuttle suspended for movement above a substrate. A plurality of permanent magnets in the shuttle of the MEM device interact with a metal plate which forms the substrate or a metal portion thereof to provide an eddy-current damping of the shuttle, thereby making the shuttle responsive to changes in acceleration or velocity of the MEM device. Alternately, the permanent magnets can be located in the substrate, and the metal portion can form the shuttle. An electrical switch closure in the MEM device can occur in response to a predetermined acceleration-time event. The MEM device, which can be fabricated either by micromachining or LIGA, can be used for sensing an acceleration or deceleration event (e.g. in automotive applications such as airbag deployment or seat belt retraction).

  9. All fiber passively Q-switched laser

    DOE Patents [OSTI]

    Soh, Daniel B. S.; Bisson, Scott E

    2015-05-12

    Embodiments relate to an all fiber passively Q-switched laser. The laser includes a large core doped gain fiber having a first end. The large core doped gain fiber has a first core diameter. The laser includes a doped single mode fiber (saturable absorber) having a second core diameter that is smaller than the first core diameter. The laser includes a mode transformer positioned between a second end of the large core doped gain fiber and a first end of the single mode fiber. The mode transformer has a core diameter that transitions from the first core diameter to the second core diameter and filters out light modes not supported by the doped single mode fiber. The laser includes a laser cavity formed between a first reflector positioned adjacent the large core doped gain fiber and a second reflector positioned adjacent the doped single mode fiber.

  10. High voltage photo switch package module

    DOE Patents [OSTI]

    Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen E

    2014-02-18

    A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces, and at least one light-input surface. First metallic layers are formed on the electrode-interface surfaces, and one or more optical waveguides having input and output ends are bonded to the substrate so that the output end of each waveguide is bonded to a corresponding one of the light-input surfaces of the photo-conductive substrate. This forms a waveguide-substrate interface for coupling light into the photo-conductive wafer. A dielectric material such as epoxy is then used to encapsulate the photo-conductive substrate and optical waveguide so that only the metallic layers and the input end of the optical waveguide are exposed. Second metallic layers are then formed on the first metallic layers so that the waveguide-substrate interface is positioned under the second metallic layers.

  11. Permanent-magnet switched-flux machine

    DOE Patents [OSTI]

    Trzynadlowski, Andrzej M.; Qin, Ling

    2011-06-14

    A permanent-magnet switched-flux (PMSF) device has an outer rotor mounted to a shaft about a central axis extending axially through the PMSF device. First and second pluralities of permanent-magnets (PMs) are respectively mounted in first and second circles, radially outwardly in first and second transverse planes extending from first and second sections of the central axis adjacent to an inner surface of the outer rotor. An inner stator is coupled to the shaft and has i) a stator core having a core axis co-axial with the central axis; and ii) first and second pluralities of stator poles mounted in first and second circles, radially outwardly from the stator core axis in the first and second transverse planes. The first and second pluralities of PMs each include PMs of alternating polarity.

  12. Permanent-magnet switched-flux machine

    DOE Patents [OSTI]

    Trzynadlowski, Andrzej M.; Qin, Ling

    2010-01-12

    A permanent-magnet switched-flux (PMSF) device has a ferromagnetic outer stator mounted to a shaft about a central axis extending axially through the PMSF device. Pluralities of top and bottom stator poles are respectively mounted in first and second circles, radially outwardly in first and second transverse planes extending from first and second sections of the central axis adjacent to an inner surface of the ferromagnetic outer stator. A ferromagnetic inner rotor is coupled to the shaft and has i) a rotor core having a core axis co-axial with the central axis; and ii) first and second discs having respective outer edges with first and second pluralities of permanent magnets (PMs) mounted in first and second circles, radially outwardly from the rotor core axis in the first and second transverse planes. The first and second pluralities of PMs each include PMs of alternating polarity.

  13. Bandwidth and Transfer Activity

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    average. Graphs for the last 8 days. Historical yearly peak days. Daily Storage Concurrency Transfer Activity This graph shows the number of transfers to the storage systems...

  14. High bandwidth optical mount

    DOE Patents [OSTI]

    Bender, D.A.; Kuklo, T.

    1994-11-08

    An optical mount, which directs a laser beam to a point by controlling the position of a light-transmitting optic, is stiffened so that a lowest resonant frequency of the mount is approximately one kilohertz. The optical mount, which is cylindrically-shaped, positions the optic by individually moving a plurality of carriages which are positioned longitudinally within a sidewall of the mount. The optical mount is stiffened by allowing each carriage, which is attached to the optic, to move only in a direction which is substantially parallel to a center axis of the optic. The carriage is limited to an axial movement by flexures or linear bearings which connect the carriage to the mount. The carriage is moved by a piezoelectric transducer. By limiting the carriage to axial movement, the optic can be kinematically clamped to a carriage. 5 figs.

  15. High bandwidth optical mount

    DOE Patents [OSTI]

    Bender, Donald A.; Kuklo, Thomas

    1994-01-01

    An optical mount, which directs a laser beam to a point by controlling the position of a light-transmitting optic, is stiffened so that a lowest resonant frequency of the mount is approximately one kilohertz. The optical mount, which is cylindrically-shaped, positions the optic by individually moving a plurality of carriages which are positioned longitudinally within a sidewall of the mount. The optical mount is stiffened by allowing each carriage, which is attached to the optic, to move only in a direction which is substantially parallel to a center axis of the optic. The carriage is limited to an axial movement by flexures or linear bearings which connect the carriage to the mount. The carriage is moved by a piezoelectric transducer. By limiting the carriage to axial movement, the optic can be kinematically clamped to a carriage.

  16. Reduced Switching Frequency Active Harmonic Elimination for Multilevel Converters

    SciTech Connect (OSTI)

    Du, Zhong; Tolbert, Leon M; Chiasson, John N; Ozpineci, Burak

    2008-01-01

    This paper presents a reduced switching-frequency active-harmonic-elimination method (RAHEM) to eliminate any number of specific order harmonics of multilevel converters. First, resultant theory is applied to transcendental equations to eliminate low-order harmonics and to determine switching angles for a fundamental frequency-switching scheme. Next, based on the number of harmonics to be eliminated, Newton climbing method is applied to transcendental equations to eliminate high-order harmonics and to determine switching angles for the fundamental frequency-switching scheme. Third, the magnitudes and phases of the residual lower order harmonics are computed, generated, and subtracted from the original voltage waveform to eliminate these low-order harmonics. Compared to the active-harmonic-elimination method (AHEM), which generates square waves to cancel high-order harmonics, RAHEM has lower switching frequency. The simulation results show that the method can effectively eliminate all the specific harmonics, and a low total harmonic distortion (THD) near sine wave is produced. An experimental 11-level H-bridge multilevel converter with a field-programmable gate-array controller is employed to experimentally validate the method. The experimental results show that RAHEM does effectively eliminate any number of specific harmonics, and the output voltage waveform has low switching frequency and low THD.

  17. Photo-induced micro-mechanical optical switch

    DOE Patents [OSTI]

    Rajic, Slobodan; Datskos, Panagiotis George; Egert, Charles M.

    2002-01-01

    An optical switch is formed by introducing light lengthwise to a microcantilever waveguide directed toward a second waveguide. The microcantilever is caused to bend by light emitted from a laser diode orthogonal to the microcantilever and at an energy above the band gap, which induces stress as a result of the generation of free carriers. The bending of the waveguide directs the carrier frequency light to a second receptor waveguide or to a non-responsive surface. The switch may be combined in an array to perform multiple switching functions rapidly and at low energy losses.

  18. Capacitive microelectromechanical switches with dynamic soft-landing

    DOE Patents [OSTI]

    Jain, Ankit; Alam, Muhammad Ashraful; Nair, Pradeep R.

    2015-10-13

    A microelectromechanical system (MEMS)-based electrical switch. The electrical switch includes a moveable electrode, a dielectric layer positioned adjacent the moveable electrode on a first side of the dielectric layer and spaced apart from the moveable electrode when the moveable electrode is in an inactivated position and in contact with the moveable electrode when the moveable electrode is in an activated position, and a substrate attached to the dielectric layer on a second side opposite to the first side, the moveable electrode is configured to brake prior to coming in contact with the dielectric layer when the moveable electrode is switched between the inactivated state and the activated state.

  19. Spintronic switches for ultra low energy global interconnects

    SciTech Connect (OSTI)

    Sharad, Mrigank Roy, Kaushik

    2014-05-07

    We present ultra-low energy interconnect design using nano-scale spin-torque (ST) switches for global data-links. Emerging spin-torque phenomena can lead to ultra-low-voltage, high-speed current-mode magnetic-switches. ST-switches can simultaneously provide large trans-impedance gain by employing magnetic tunnel junctions, to convert current-mode signals into large-swing voltage levels. Such device-characteristics can be used in the design of energy-efficient current-mode global interconnects.

  20. Electrical Breakdown Physics in Photoconductive Semiconductor Switches (PCSS).

    SciTech Connect (OSTI)

    Mar, Alan; Zutavern, Fred J.; Vawter, Gregory A.; Hjalmarson, Harold P.; Gallegos, Richard Joseph; Bigman, Verle Howard

    2016-01-01

    Advanced switching devices with long lifetime will be critical components for Linear Transformer Drivers (LTDs) in next-generation accelerators. LTD designs employ high switch counts. With current gas switch technology at %7E10e3 shot life, a potential game-changer would be the development of a reliable low-impedance (%3C35nh) optically-triggered compact solid-state switch capable of switching 200kV and 50kA with 10e5 shotlife or better. Other applications of this technology, are pulse shaping programmable systems for dynamic material studies (Z-next, Genesis), efficient pulsed power systems for biofuel feedstock, short pulse (10 ns) accelerator designs for the Defense Threat Reduction Agency (DTRA), and sprytron replacements in NW firing sets. This LDRD project has succeeded in developing new optically-triggered photoconductive semiconductor switch (PCSS) designs that show great promise for scaling to modules capable of 200kV (DC) and 5kA current that can be stacked in parallel to achieve 100's of kA with 10e5 shot lifetime. . Executive Summary Advanced switching devices with long lifetime will be critical components for Linear Transformer Drivers (LTDs) in next-generation accelerators. LTD designs employ high switch counts. With current gas switch technology at %7E10e3 shot life, a potential game-changer would be the development of a reliable low-impedance (%3C35nh) optically-triggered compact solid-state switch capable of switching 200kV and 50kA with 10e5 shotlife or better. Other applications of this technology, are pulse shaping programmable systems for dynamic material studies (Z-next, Genesis), efficient pulsed power systems for biofuel feedstock, short pulse (10 ns) accelerator designs for the Defense Threat Reduction Agency (DTRA), and sprytron replacements in NW firing sets. This LDRD project has succeeded in developing new optically-triggered photoconductive semiconductor switch (PCSS) designs that show great promise for scaling to modules capable of 200kV (DC) and 5kA current that can be stacked in parallel to achieve 100's of kA with 10e5 shot lifetime. The new vertical switch design configuration generates parallel filaments in the bulk GaAs (as opposed to just beneath the surface as in previous designs) to achieve breakdown fields close to the maximum for the bulk GaAs while operating in air, and with 2-D scalability of the number of current-sharing filaments. This design also may be highly compatible with 2-D VCSEL arrays for optical triggering. The demonstration of this design in this LDRD utilized standard thickness wafers to trigger 0.4kA at 35kV/cm (limited by 0.6mm wafer thickness), tested to 1e5 shots with no detectable degradation of switch performance. Higher fields, total current, and switching voltages would be achievable with thicker GaAs wafers. Another important application pursued in this LDRD is the use of PCSS for trigger generator applications. Conventional in-plane PCSS have achieved triggering of a 100kV sparkgap (Kinetech-type) switch of the type similar to switches being considered for accelerator upgrades. The trigger is also being developed for pulsed power for HPM applications that require miniaturization and robust performance in noisy compact environments. This has spawned new programs for developing this technology, including an STTR for VCSEL trigger laser integration, also pursuing other follow-on applications.

  1. Spark gap device for precise switching

    DOE Patents [OSTI]

    Boettcher, Gordon E.

    1984-01-01

    A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centrigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations.

  2. Spark gap device for precise switching

    DOE Patents [OSTI]

    Boettcher, G.E.

    1984-10-02

    A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations. 3 figs.

  3. Electro-mechanical heat switch for cryogenic applications

    DOE Patents [OSTI]

    van den Berg, Marcel L.; Batteux, Jan D.; Labov, Simon E.

    2003-01-01

    A heat switch includes two symmetric jaws. Each jaw is comprised of a link connected at a translatable joint to a flexible arm. Each arm rotates about a fixed pivot, and has an articulated end including a thermal contact pad connected to a heat sink. The links are joined together at a translatable main joint. To close the heat switch, a closing solenoid is actuated and forces the main joint to an over-center position. This movement rotates the arms about their pivots, respectively, forces each of them into a stressed configuration, and forces the thermal contact pads towards each other and into compressive contact with a cold finger. The closing solenoid is then deactivated. The heat switch remains closed due to a restoring force generated by the stressed configuration of each arm, until actuation of an opening solenoid returns the main joint to its starting open-switch position.

  4. Open Transport Switch A Software Defined Networking Architecture

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A demonstration use-case of an OpenFlow-enabled optical virtual switch im- plementation managing a small optical transport network for big-data applications is described. With ...

  5. Hypersensitive switching behavior in the Q-phase of unconventional...

    Office of Scientific and Technical Information (OSTI)

    Title: Hypersensitive switching behavior in the Q-phase of unconventional superconductor CeCoIn5 Authors: Kim, Duk Young 1 ; Lin, Shizeng 1 ; Weickert, Franziska 2 ; Bauer, ...

  6. Get Current: Switch on Clean Energy Activity Book

    SciTech Connect (OSTI)

    2014-06-01

    Switching on clean energy technologies means strengthening the economy while protecting the environment. This activity book for all ages promotes energy awareness, with facts on different types of energy and a variety of puzzles in an energy theme.

  7. Switching behaviors of graphene-boron nitride nanotube heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Parashar, Vyom; Durand, Corentin P.; Hao, Boyi; Amorim, Rodrigo G.; Pandey, Ravindra; Tiwari, Bishnu; Zhang, Dongyan; Liu, Yang; Li, An -Ping; Yap, Yoke Khin

    2015-07-20

    High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5more » V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.« less

  8. Switching behaviors of graphene-boron nitride nanotube heterojunctions

    SciTech Connect (OSTI)

    Parashar, Vyom; Durand, Corentin P.; Hao, Boyi; Amorim, Rodrigo G.; Pandey, Ravindra; Tiwari, Bishnu; Zhang, Dongyan; Liu, Yang; Li, An -Ping; Yap, Yoke Khin

    2015-07-20

    High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5 V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.

  9. Commute Mode Switching Impact Tool | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Commute Mode Switching Impact Tool Commute Mode Switching Impact Tool Excel tool helps agencies project the impact that changes in employee commute modes would have on its employee commute emissions. The tool is designed to be used at the worksite level and summed up at the agency level. The output of this tool can help agencies establish appropriate greenhouse gas reduction targets for major worksites or clusters of worksites in common metropolitan areas. File Download the Commute Mode

  10. Emerging Resistive Switching Memory Technologies: Overview and Current

    Office of Scientific and Technical Information (OSTI)

    Status. (Conference) | SciTech Connect Resistive Switching Memory Technologies: Overview and Current Status. Citation Details In-Document Search Title: Emerging Resistive Switching Memory Technologies: Overview and Current Status. Abstract not provided. Authors: Marinella, Matthew Publication Date: 2014-05-01 OSTI Identifier: 1147687 Report Number(s): SAND2014-4459C 521502 DOE Contract Number: DE-AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: ISCAS 2014 held June

  11. Hypersensitive switching behavior in the Q-phase of unconventional

    Office of Scientific and Technical Information (OSTI)

    superconductor CeCoIn5 (Conference) | SciTech Connect Conference: Hypersensitive switching behavior in the Q-phase of unconventional superconductor CeCoIn5 Citation Details In-Document Search Title: Hypersensitive switching behavior in the Q-phase of unconventional superconductor CeCoIn5 Authors: Kim, Duk Young [1] ; Lin, Shizeng [1] ; Weickert, Franziska [2] ; Bauer, Eric Dietzgen [1] ; Ronning, Filip [1] ; Thompson, Joe David [1] ; Movshovich, Roman [1] + Show Author Affiliations Los

  12. Length Scale of Leidenfrost Ratchet Switches Droplet Directionality

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Length Scale of Leidenfrost Ratchet Switches Droplet Directionality Citation Details In-Document Search Title: Length Scale of Leidenfrost Ratchet Switches Droplet Directionality Arrays of tilted pillars with characteristic heights spanning from hundreds of nanometers to tens of micrometers were created using wafer level processing and used as Leidenfrost ratchets to control droplet directionality. Dynamic Leidenfrost droplets on the ratchets with

  13. Multiprocessor switch with selective pairing (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Multiprocessor switch with selective pairing Citation Details In-Document Search Title: Multiprocessor switch with selective pairing System, method and computer program product for a multiprocessing system to offer selective pairing of processor cores for increased processing reliability. A selective pairing facility is provided that selectively connects, i.e., pairs, multiple microprocessor or processor cores to provide one highly reliable thread (or thread group). Each paired microprocessor or

  14. New Mathematical Method Reveals Where Genes Switch On or Off

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Mathematical Method Reveals Where Genes Switch On or Off New Mathematical Method Reveals Where Genes Switch On or Off "Compressed sensing" determines atomic-level energy potentials with accuracy approaching experimental measurement February 22, 2012 John Hules, JAHules@lbl.gov, +1 510 486 6008 Figure 1. Helix-turn-helix (HTH) proteins are the most widely distributed family of DNA-binding proteins, occurring in all biological kingdoms. This image shows a lambda repressor HTH

  15. All-optical switching in optically induced nonlinear waveguide couplers

    SciTech Connect (OSTI)

    Diebel, Falko Boguslawski, Martin; Rose, Patrick; Denz, Cornelia; Leykam, Daniel; Desyatnikov, Anton S.

    2014-06-30

    We experimentally demonstrate all-optical vortex switching in nonlinear coupled waveguide arrays optically induced in photorefractive media. Our technique is based on multiplexing of nondiffracting Bessel beams to induce various types of waveguide configurations. Using double- and quadruple-well potentials, we demonstrate precise control over the coupling strength between waveguides, the linear and nonlinear dynamics and symmetry-breaking bifurcations of guided light, and a power-controlled optical vortex switch.

  16. Flipping the switch on magnetism in strontium titanate

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Flipping the switch on magnetism in strontium titanate Flipping the switch on magnetism in strontium titanate Researchers have found a way to magnetize this material using light, an effect that persists for hours at a time. March 27, 2014 Los Alamos postdoctoral fellow William Rice holds a crystal of strontium titanate up to the light. This crystal, previously thought to be nonmagnetic, turns out to have surprising magnetic features when treated with special "circularly polarized"

  17. Multi-Stage Plasma Switch | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Multi-Stage Plasma Switch A multi-stage plasma switch consists of two or more current-conducting plasma regions in which plasma properties are controlled by a self-biasing and applied magnetic field. The magnetic field topology is crafted in such a way that it allows reduction of the ion-induced erosion of the electrodes No.: M-889 Inventor(s): Yevgeny Raitses

  18. Electronically commutated serial-parallel switching for motor windings

    DOE Patents [OSTI]

    Hsu, John S. (Oak Ridge, TN)

    2012-03-27

    A method and a circuit for controlling an ac machine comprises controlling a full bridge network of commutation switches which are connected between a multiphase voltage source and the phase windings to switch the phase windings between a parallel connection and a series connection while providing commutation discharge paths for electrical current resulting from inductance in the phase windings. This provides extra torque for starting a vehicle from lower battery current.

  19. Beyond the Light Switch - Joint Center for Energy Storage Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    April 22, 2015, Videos Beyond the Light Switch On this edition of Beyond the Light Switch, aired on PBS in April 2015, the program focuses on the electrification of the American economy - in transportation, shipping, airlines, even in the U.S. military and its importance to our national security. Scientific American's David Biello came to Argonne (34 min. into program) to discuss the research required to meet the nation's energy storage goals

  20. Bakery Switches to Propane Vans | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bakery Switches to Propane Vans By Jo Napolitano * April 21, 2016 Tweet EmailPrint A switch to propane from diesel by a major Midwest bakery fleet showed promising results, including a significant displacement of petroleum, a drop in greenhouse gases and a fuel cost savings of seven cents per mile, according to a study released Thursday by the U.S. Department of Energy's (DOE's) Argonne National Laboratory. The work was carried out under the auspices of DOE's Clean Cities initiative. The

  1. Sub-picosecond optical switching with a negative index metamaterial

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Sub-picosecond optical switching with a negative index metamaterial Citation Details In-Document Search Title: Sub-picosecond optical switching with a negative index metamaterial Development of all-optical signal processing, eliminating the performance and cost penalties of optical-electrical-optical conversion, is important for continu,ing advances in Terabits/sec (Tb/s) communications.' Optical

  2. Understanding and using configurational changes in resistive switching

    Office of Scientific and Technical Information (OSTI)

    filaments. (Conference) | SciTech Connect Understanding and using configurational changes in resistive switching filaments. Citation Details In-Document Search Title: Understanding and using configurational changes in resistive switching filaments. Abstract not provided. Authors: Mickel, Patrick R. ; Lohn, Andrew ; James, Conrad D. ; Marinella, Matthew Publication Date: 2014-02-01 OSTI Identifier: 1140919 Report Number(s): SAND2014-1502C 504910 DOE Contract Number: DE-AC04-94AL85000 Resource

  3. Co-scheduling of network resource provisioning and host-to-host bandwidth reservation on high-performance network and storage systems

    DOE Patents [OSTI]

    Yu, Dantong; Katramatos, Dimitrios; Sim, Alexander; Shoshani, Arie

    2014-04-22

    A cross-domain network resource reservation scheduler configured to schedule a path from at least one end-site includes a management plane device configured to monitor and provide information representing at least one of functionality, performance, faults, and fault recovery associated with a network resource; a control plane device configured to at least one of schedule the network resource, provision local area network quality of service, provision local area network bandwidth, and provision wide area network bandwidth; and a service plane device configured to interface with the control plane device to reserve the network resource based on a reservation request and the information from the management plane device. Corresponding methods and computer-readable medium are also disclosed.

  4. Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters

    SciTech Connect (OSTI)

    2012-02-13

    Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

  5. Multi-line triggering and interdigitated electrode structure for photoconductive semiconductor switches

    DOE Patents [OSTI]

    Mar, Alan (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM); Loubriel, Guillermo (Albuquerque, NM)

    2007-02-06

    An improved photoconductive semiconductor switch comprises multiple-line optical triggering of multiple, high-current parallel filaments between the switch electrodes. The switch can also have a multi-gap, interdigitated electrode for the generation of additional parallel filaments. Multi-line triggering can increase the switch lifetime at high currents by increasing the number of current filaments and reducing the current density at the contact electrodes in a controlled manner. Furthermore, the improved switch can mitigate the degradation of switching conditions with increased number of firings of the switch.

  6. Alternative Fuels Data Center: Cities Make the Clean Switch to Natural Gas

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Cities Make the Clean Switch to Natural Gas to someone by E-mail Share Alternative Fuels Data Center: Cities Make the Clean Switch to Natural Gas on Facebook Tweet about Alternative Fuels Data Center: Cities Make the Clean Switch to Natural Gas on Twitter Bookmark Alternative Fuels Data Center: Cities Make the Clean Switch to Natural Gas on Google Bookmark Alternative Fuels Data Center: Cities Make the Clean Switch to Natural Gas on Delicious Rank Alternative Fuels Data Center: Cities Make the

  7. Ferroelectric opening switches for large-scale pulsed power drivers.

    SciTech Connect (OSTI)

    Brennecka, Geoffrey L.; Rudys, Joseph Matthew; Reed, Kim Warren; Pena, Gary Edward; Tuttle, Bruce Andrew; Glover, Steven Frank

    2009-11-01

    Fast electrical energy storage or Voltage-Driven Technology (VDT) has dominated fast, high-voltage pulsed power systems for the past six decades. Fast magnetic energy storage or Current-Driven Technology (CDT) is characterized by 10,000 X higher energy density than VDT and has a great number of other substantial advantages, but it has all but been neglected for all of these decades. The uniform explanation for neglect of CDT technology is invariably that the industry has never been able to make an effective opening switch, which is essential for the use of CDT. Most approaches to opening switches have involved plasma of one sort or another. On a large scale, gaseous plasmas have been used as a conductor to bridge the switch electrodes that provides an opening function when the current wave front propagates through to the output end of the plasma and fully magnetizes the plasma - this is called a Plasma Opening Switch (POS). Opening can be triggered in a POS using a magnetic field to push the plasma out of the A-K gap - this is called a Magnetically Controlled Plasma Opening Switch (MCPOS). On a small scale, depletion of electron plasmas in semiconductor devices is used to affect opening switch behavior, but these devices are relatively low voltage and low current compared to the hundreds of kilo-volts and tens of kilo-amperes of interest to pulsed power. This work is an investigation into an entirely new approach to opening switch technology that utilizes new materials in new ways. The new materials are Ferroelectrics and using them as an opening switch is a stark contrast to their traditional applications in optics and transducer applications. Emphasis is on use of high performance ferroelectrics with the objective of developing an opening switch that would be suitable for large scale pulsed power applications. Over the course of exploring this new ground, we have discovered new behaviors and properties of these materials that were here to fore unknown. Some of these unexpected discoveries have lead to new research directions to address challenges.

  8. Detection and characterization of multi-filament evolution during resistive switching

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mickel, Patrick R.; Lohn, Andrew J.; Marinella, Matthew J.

    2014-08-05

    We present resistive switching data in TaOx memristors displaying signatures of multi-filament switching modes, and develop a geometrically defined equivalent circuit to separate the individual resistances and powers dissipated in each filament. Using these resolved values, we compare the individual switching curves of each filament and demonstrate that the switching data of each filament collapse onto a single switching curve determined by the analytical steady-state resistive switching solution for filamentary switching. Analyzing our results in terms of this solution, we determine the switching temperature, heat flow, conductivity, and time evolving areas of each filament during resistive switching. Finally, we discussmore » operational modes which may limit the formation of additional conducting filaments, potentially leading to increased device endurance.« less

  9. Utilizing zero-sequence switchings for reversible converters

    DOE Patents [OSTI]

    Hsu, John S.; Su, Gui-Jia; Adams, Donald J.; Nagashima, James M.; Stancu, Constantin; Carlson, Douglas S.; Smith, Gregory S.

    2004-12-14

    A method for providing additional dc inputs or outputs (49, 59) from a dc-to-ac inverter (10) for controlling motor loads (60) comprises deriving zero-sequence components (V.sub.ao, V.sub.bo, and V.sub.co) from the inverter (10) through additional circuit branches with power switching devices (23, 44, 46), transforming the voltage between a high voltage and a low voltage using a transformer or motor (42, 50), converting the low voltage between ac and dc using a rectifier (41, 51) or an H-bridge (61), and providing at least one low voltage dc input or output (49, 59). The transformation of the ac voltage may be either single phase or three phase. Where less than a 100% duty cycle is acceptable, a two-phase modulation of the switching signals controlling the inverter (10) reduces switching losses in the inverter (10). A plurality of circuits for carrying out the invention are also disclosed.

  10. Nanoscale mechanical switching of ferroelectric polarization via flexoelectricity

    SciTech Connect (OSTI)

    Gu, Yijia; Hong, Zijian; Britson, Jason; Chen, Long-Qing

    2015-01-12

    Flexoelectric coefficient is a fourth-rank tensor arising from the coupling between strain gradient and electric polarization and thus exists in all crystals. It is generally ignored for macroscopic crystals due to its small magnitude. However, at the nanoscale, flexoelectric contributions may become significant and can potentially be utilized for device applications. Using the phase-field method, we study the mechanical switching of electric polarization in ferroelectric thin films by a strain gradient created via an atomic force microscope tip. Our simulation results show good agreement with existing experimental observations. We examine the competition between the piezoelectric and flexoelectric effects and provide an understanding of the role of flexoelectricity in the polarization switching. Also, by changing the pressure and film thickness, we reveal that the flexoelectric field at the film bottom can be used as a criterion to determine whether domain switching may happen under a mechanical force.

  11. Enhancement of Spin-transfer torque switching via resonant tunneling

    SciTech Connect (OSTI)

    Chatterji, Niladri; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

    2014-12-08

    We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.

  12. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; Kalinin, Sergei V; Lai, Keji; Demkov, Alexander A.

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  13. Ferroelectric Switching by the Grounded Scanning Probe Microscopy Tip

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ievlev, Anton; Morozovska, A. N.; Shur, Vladimir Ya.; Kalinin, Sergei V

    2015-01-01

    The process of polarization reversal by the tip of scanning probe microscope was intensively studied for last two decades. Number of the abnormal switching phenomena was reported by the scientific groups worldwide. In particularly it was experimentally and theoretically shown that slow dynamics of the surface screening controls kinetics of the ferroelectric switching, backswitching and relaxation and presence of the charges carriers on the sample surface and in the sample bulk significantly change polarization reversal dynamics. Here we experimentally demonstrated practical possibility of the history dependent polarization reversal by the grounded SPM tip. This phenomenon was attributed to induction ofmore » the slowly dissipating charges into the surface of the grounded tip that enables polarization reversal under the action of the produced electric field. Analytical and numerical electrostatic calculations allow additional insight into nontrivial abnormal switching phenomena reported earlier.« less

  14. Ferroelectric Switching by the Grounded Scanning Probe Microscopy Tip

    SciTech Connect (OSTI)

    Ievlev, Anton; Morozovska, A. N.; Shur, Vladimir Ya.; Kalinin, Sergei V

    2015-01-01

    The process of polarization reversal by the tip of scanning probe microscope was intensively studied for last two decades. Number of the abnormal switching phenomena was reported by the scientific groups worldwide. In particularly it was experimentally and theoretically shown that slow dynamics of the surface screening controls kinetics of the ferroelectric switching, backswitching and relaxation and presence of the charges carriers on the sample surface and in the sample bulk significantly change polarization reversal dynamics. Here we experimentally demonstrated practical possibility of the history dependent polarization reversal by the grounded SPM tip. This phenomenon was attributed to induction of the slowly dissipating charges into the surface of the grounded tip that enables polarization reversal under the action of the produced electric field. Analytical and numerical electrostatic calculations allow additional insight into nontrivial abnormal switching phenomena reported earlier.

  15. Spark gap switch system with condensable dielectric gas

    DOE Patents [OSTI]

    Thayer, III, William J.

    1991-01-01

    A spark gap switch system is disclosed which is capable of operating at a high pulse rate comprising an insulated switch housing having a purging gas entrance port and a gas exit port, a pair of spaced apart electrodes each having one end thereof within the housing and defining a spark gap therebetween, an easily condensable and preferably low molecular weight insulating gas flowing through the switch housing from the housing, a heat exchanger/condenser for condensing the insulating gas after it exits from the housing, a pump for recirculating the condensed insulating gas as a liquid back to the housing, and a heater exchanger/evaporator to vaporize at least a portion of the condensed insulating gas back into a vapor prior to flowing the insulating gas back into the housing.

  16. Hypersensitive switching behavior in the Q-phase of unconventional

    Office of Scientific and Technical Information (OSTI)

    superconductor CeCoIn5 (Conference) | SciTech Connect Conference: Hypersensitive switching behavior in the Q-phase of unconventional superconductor CeCoIn5 Citation Details In-Document Search Title: Hypersensitive switching behavior in the Q-phase of unconventional superconductor CeCoIn5 × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public

  17. National Lab 'Flips Switch' on East Coast's Largest Solar Array |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Lab 'Flips Switch' on East Coast's Largest Solar Array National Lab 'Flips Switch' on East Coast's Largest Solar Array November 21, 2011 - 12:16pm Addthis An aerial view of the 32-megawatt photovoltaic array of the Long Island Solar Farm, which will produce enough energy to power up to 4,500 local homes. The central Brookhaven National Laboratory campus is seen at left. An aerial view of the 32-megawatt photovoltaic array of the Long Island Solar Farm, which will produce

  18. A Conserved Phosphorylation Switch Controls the Interaction between

    Office of Scientific and Technical Information (OSTI)

    Cadherin and β-Catenin In Vitro and In Vivo (Journal Article) | SciTech Connect A Conserved Phosphorylation Switch Controls the Interaction between Cadherin and β-Catenin In Vitro and In Vivo Citation Details In-Document Search Title: A Conserved Phosphorylation Switch Controls the Interaction between Cadherin and β-Catenin In Vitro and In Vivo Authors: Choi, Hee-Jung ; Loveless, Timothy ; Lynch, Allison M. ; Bang, Injin ; Hardin, Jeff ; Weis, William I. Publication Date: 2015-04-01 OSTI

  19. High voltage switch triggered by a laser-photocathode subsystem

    DOE Patents [OSTI]

    Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

    2013-01-08

    A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

  20. Charging characteritiscs of ultrananocrystalline diamond in RF MEMS capacitive switches.

    SciTech Connect (OSTI)

    Sumant, A. V.; Goldsmith, C.; Auciello, O.; Carlisle, J.; Zheng, H.; Hwang, J. C. M.; Palego, C.; Wang, W.; Carpick, R.; Adiga, V.; Datta, A.; Gudeman, C.; O'Brien, S.; Sampath, S.

    2010-05-01

    Modifications to a standard capacitive MEMS switch process have been made to allow the incorporation of ultra-nano-crystalline diamond as the switch dielectric. The impact on electromechanical performance is minimal. However, these devices exhibit uniquely different charging characteristics, with charging and discharging time constants 5-6 orders of magnitude quicker than conventional materials. This operation opens the possibility of devices which have no adverse effects of dielectric charging and can be operated near-continuously in the actuated state without significant degradation in reliability.

  1. Transparent selective illumination means suitable for use in optically activated electrical switches and optically activated electrical switches constructed using same

    DOE Patents [OSTI]

    Wilcox, R.B.

    1991-09-10

    A planar transparent light conducting means and an improved optically activated electrical switch made using the novel light conducting means are disclosed. The light conducting means further comprise light scattering means on one or more opposite planar surfaces thereof to transmit light from the light conducting means into adjacent media and reflective means on other surfaces of the light conducting means not containing the light scattering means. The optically activated electrical switch comprises at least two stacked photoconductive wafers, each having electrodes formed on both surfaces thereof, and separated by the planar transparent light conducting means. The light scattering means on the light conducting means face surfaces of the wafers not covered by the electrodes to transmit light from the light conducting means into the photoconductive wafers to uniformly illuminate and activate the switch. 11 figures.

  2. Transparent selective illumination means suitable for use in optically activated electrical switches and optically activated electrical switches constructed using same

    DOE Patents [OSTI]

    Wilcox, Russell B. (Oakland, CA)

    1991-01-01

    A planar transparent light conducting means and an improved optically activated electrical switch made using the novel light conducting means are disclosed. The light conducting means further comprise light scattering means on one or more opposite planar surfaces thereof to transmit light from the light conducting means into adjacent media and reflective means on other surfaces of the light conducting means not containing the light scattering means. The optically activated electrical switch comprises at least two stacked photoconductive wafers, each having electrodes formed on both surfaces thereof, and separated by the planar transparent light conducting means. The light scattering means on the light conducting means face surfaces of the wafers not covered by the electrodes to transmit light from the light conducting means into the photoconductive wafers to uniformly illuminate and activate the switch.

  3. Ferroelastic switching in a layered-perovskite thin film

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Chuanshou; Ke, Xiaoxing; Wang, Jianjun; Liang, Renrong; Luo, Zhenlin; Tian, Yu; Yi, Di; Zhang, Qintong; Wang, Jing; Han, Xiu -Feng; et al

    2016-02-03

    Here, a controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layeredperovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90 within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelasticmore » switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.« less

  4. Optically-initiated silicon carbide high voltage switch

    DOE Patents [OSTI]

    Caporaso, George J.; Sampayan, Stephen E.; Sullivan, James S.; Sanders, David M.

    2012-02-28

    An improved photoconductive switch having a SIC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

  5. Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities

    DOE Patents [OSTI]

    Harrison; Neil , Singleton; John , Migliori; Albert

    2008-08-05

    A quantum coherent switch having a substrate formed from a density wave (DW) material capable of having a periodic electron density modulation or spin density modulation, a dielectric layer formed onto a surface of the substrate that is orthogonal to an intrinsic wave vector of the DW material; and structure for applying an external spatially periodic electrostatic potential over the dielectric layer.

  6. EECBG Success Story: Texas County "Flips The Switch" On NewEnergy...

    Office of Environmental Management (EM)

    Texas County "Flips The Switch" On New Energy-Efficient Complex EECBG Success Story: Texas County "Flips The Switch" On New Energy-Efficient Complex March 7, 2011 - 5:17pm Addthis ...

  7. Utility External Disconnect Switch: Practical, Legal, and Technical Reasons to Eliminate the Requirement

    Broader source: Energy.gov [DOE]

    This report documents the safe operation of PV systems without a utility external disconnect switch in several large jurisdictions. It includes recommendations for regulators contemplating utility external disconnect switch requirements.

  8. The effects of mobile ATM switches on PNNI peer group operation

    SciTech Connect (OSTI)

    Martinez, L.; Sholander, P.; Tolendino, L.

    1997-04-01

    This contribution discusses why, and how, mobile networks and mobile switches might be discussed during Phase 1 of the WATM standards process. Next, it reviews mobile routers within Mobile IP. That IP mobility architecture may not apply to the proposed mobile ATM switches. Finally, it discusses problems with PNNI peer group formation and operation when mobile ATM switches are present.

  9. Spin-transfer switching of orthogonal spin-valve devices at cryogenic temperatures

    SciTech Connect (OSTI)

    Ye, L. Gopman, D. B.; Rehm, L.; Backes, D.; Wolf, G.; Kent, A. D.; Ohki, T.; Kirichenko, A. F.; Vernik, I. V.; Mukhanov, O. A.

    2014-05-07

    We present the quasi-static and dynamic switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at cryogenic temperatures. Switching at 12 K between parallel and anti-parallel spin-valve states is investigated for slowly varied current as well as for current pulses with durations as short as 200 ps. We demonstrate 100% switching probability with current pulses 0.6 ns in duration. We also present a switching probability diagram that summarizes device switching operation under a variety of pulse durations, amplitudes, and polarities.

  10. Electro-optical switching and memory display device

    DOE Patents [OSTI]

    Skotheim, T.A.; O'Grady, W.E.; Linkous, C.A.

    1983-12-29

    An electro-optical display device having a housing with wall means including one transparent wall and at least one other wall. Counter electrodes are positioned on the transparent wall and display electrodes are positioned on the other wall with both electrodes in electrically conductive relationship with an electrolyte. Circuits means are connected to the display and counter electrodes to apply different predetermined control potentials between them. The display electrodes are covered with a thin electrically conductive polymer film that is characterized according to the invention by having embedded in it pigment molecules as counter ions. The display device is operable to be switched to a plurality of different visual color states at an exceptionally rapid switching rate while each of the color states is characterized by possessing good color intensity and definition.

  11. Electro-optical switching and memory display device

    DOE Patents [OSTI]

    Skotheim, Terje A.; O'Grady, William E.; Linkous, Clovis A.

    1986-01-01

    An electro-optical display device having a housing with wall means including one transparent wall and at least one other wall. Counter electrodes are positioned on the transparent wall and display electrodes are positioned on the other wall with both electrodes in electrically conductive relationship with an electrolyte. Circuit means are connected to the display and counter electrodes to apply different predetermined control potentials between them. The display electrodes are covered with a thin electrically conductive polymer film that is characterized according to the invention by having embedded in it pigment molecules as counter ions. The display device is operable to be switched to a plurality of different visual color states at an exceptionally rapid switching rate while each of the color states is characterized by possessing good color intensity and definition.

  12. Combustion mode switching with a turbocharged/supercharged engine

    DOE Patents [OSTI]

    Mond, Alan; Jiang, Li

    2015-09-22

    A method for switching between low- and high-dilution combustion modes in an internal combustion engine having an intake passage with an exhaust-driven turbocharger, a crankshaft-driven positive displacement supercharger downstream of the turbocharger and having variable boost controllable with a supercharger bypass valve, and a throttle valve downstream of the supercharger. The current combustion mode and mass air flow are determined. A switch to the target combustion mode is commanded when an operating condition falls within a range of predetermined operating conditions. A target mass air flow to achieve a target air-fuel ratio corresponding to the current operating condition and the target combustion mode is determined. The degree of opening of the supercharger bypass valve and the throttle valve are controlled to achieve the target mass air flow. The amount of residual exhaust gas is manipulated.

  13. Plasma Switch for High-Power Active Pulse Compressor

    SciTech Connect (OSTI)

    Hirshfield, Jay L.

    2013-11-04

    Results are presented from experiments carried out at the Naval Research Laboratory X-band magnicon facility on a two-channel X-band active RF pulse compressor that employed plasma switches. Experimental evidence is shown to validate the basic goals of the project, which include: simultaneous firing of plasma switches in both channels of the RF circuit, operation of quasi-optical 3-dB hybrid directional coupler coherent superposition of RF compressed pulses from both channels, and operation of the X-band magnicon directly in the RF pulse compressor. For incident 1.2 ?s pulses in the range 0.63 ? 1.35 MW, compressed pulses of peak powers 5.7 ? 11.3 MW were obtained, corresponding to peak power gain ratios of 8.3 ? 9.3. Insufficient bakeout and conditioning of the high-power RF circuit prevented experiments from being conducted at higher RF input power levels.

  14. Vacuum-surface flashover switch with cantilever conductors

    DOE Patents [OSTI]

    Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

    2001-01-01

    A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

  15. Irreversible Low Load Genetic Switches - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Irreversible Low Load Genetic Switches Lawrence Berkeley National Laboratory Contact LBL About This Technology Technology Marketing SummaryAlthough the use of recombinases for manipulation of genomic sequences is well established, only a few recombinases have been conclusively demonstrated to work orthogonally. That is, as non-cross-reacting recombinases, they do not cause unpredictable recombination events. DescriptionResearchers at the Joint BioEnergy Institute (JBEI) have developed novel

  16. Reversible Switching from Antiferro- to Ferromagnetic Behavior by

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solvent-Mediated, Thermally-Induced Phase Transitions in a Trimorphic MOF-Based Magnetic Sponge System | Center for Gas SeparationsRelevant to Clean Energy Technologies | Blandine Jerome Reversible Switching from Antiferro- to Ferromagnetic Behavior by Solvent-Mediated, Thermally-Induced Phase Transitions in a Trimorphic MOF-Based Magnetic Sponge System Previous Next List Mario Wriedt, Andrey A. Yakovenko, Gregory J. Halder, Andrey V. Prosvirin, Kim R. Dunbar, and Hong-Cai Zhou, J. Am. Chem.

  17. Device having two optical ports for switching applications

    DOE Patents [OSTI]

    Rosen, Ayre; Stabile, Paul J.

    1991-09-24

    A two-sided light-activatable semiconductor switch device having an optical port on each side thereof. The semiconductor device may be a p-i-n diode or of bulk intrinsic material. A two ported p-i-n diode, reverse-biased to "off" by a 1.3 kV dc power supply, conducted 192 A when activated by two 1 kW laser diode arrays, one for each optical port.

  18. The Usefulness of Bi-Level Switching; Original Technical Note: November 1998. Revised August, 1999

    SciTech Connect (OSTI)

    Building Technologies Department

    1998-11-01

    California's Title 24 Energy Efficiency Building Standard requires multiple lighting level control in all individual offices. Usually, this requirement is fulfilled using bi-level switching. With bi-level switching, each office occupant is provided with two wall switches near the doorway to control their lights. In a typical installation, one switch would control 1/3 of the fluorescent lamps in the ceiling lighting system, while the other switch would control the remaining 2/3 of the lamps. This allows four possible light levels: OFF, 1/3, 2/3 and FULL lighting. Because it has been required by building code since 1983, bi-level switching is common in California office buildings. However, there is no published evidence showing that occupants sometimes use just one switch rather than just switching on both switches when entering the room. Consequently, some have questioned whether bi-level switching is a necessary or desirable requirement for typical office buildings. In fact, the draft national standard, ASHRAE Standard 90.1-1989K apparently does not require bi-level switching at all.

  19. Microwave pulse compression from a storage cavity with laser-induced switching

    DOE Patents [OSTI]

    Bolton, Paul R.

    1992-01-01

    A laser-induced switch and a multiple cavity configuration are disclosed for producing high power microwave pulses. The microwave pulses are well controlled in wavelength and timing, with a quick rise time and a variable shape and power of the pulse. In addition, a method of reducing pre-pulse leakage to a low level is disclosed. Microwave energy is directed coherently to one or more cavities that stores the energy in a single mode, represented as a standing wave pattern. In order to switch the stored microwave energy out of the main cavity and into the branch waveguide, a laser-actuated switch is provided for the cavity. The switch includes a laser, associated optics for delivering the beam into the main cavity, and a switching gas positioned at an antinode in the main cavity. When actuated, the switching gas ionizes, creating a plasma, which becomes reflective to the microwave energy, changing the resonance of the cavity, and as a result the stored microwave energy is abruptly switched out of the cavity. The laser may directly pre-ionize the switching gas, or it may pump an impurity in the switching gas to an energy level which switches when a pre-selected cavity field is attained. Timing of switching the cavities is controlled by varying the pathlength of the actuating laser beam. For example, the pathlengths may be adjusted to output a single pulse of high power, or a series of quick lower power pulses.

  20. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; et al

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

  1. Methods for batch fabrication of cold cathode vacuum switch tubes

    DOE Patents [OSTI]

    Walker, Charles A.; Trowbridge, Frank R.

    2011-05-10

    Methods are disclosed for batch fabrication of vacuum switch tubes that reduce manufacturing costs and improve tube to tube uniformity. The disclosed methods comprise creating a stacked assembly of layers containing a plurality of adjacently spaced switch tube sub-assemblies aligned and registered through common layers. The layers include trigger electrode layer, cathode layer including a metallic support/contact with graphite cathode inserts, trigger probe sub-assembly layer, ceramic (e.g. tube body) insulator layer, and metallic anode sub-assembly layer. Braze alloy layers are incorporated into the stacked assembly of layers, and can include active metal braze alloys or direct braze alloys, to eliminate costs associated with traditional metallization of the ceramic insulator layers. The entire stacked assembly is then heated to braze/join/bond the stack-up into a cohesive body, after which individual switch tubes are singulated by methods such as sawing. The inventive methods provide for simultaneously fabricating a plurality of devices as opposed to traditional methods that rely on skilled craftsman to essentially hand build individual devices.

  2. Active high-power RF switch and pulse compression system

    DOE Patents [OSTI]

    Tantawi, Sami G.; Ruth, Ronald D.; Zolotorev, Max

    1998-01-01

    A high-power RF switching device employs a semiconductor wafer positioned in the third port of a three-port RF device. A controllable source of directed energy, such as a suitable laser or electron beam, is aimed at the semiconductor material. When the source is turned on, the energy incident on the wafer induces an electron-hole plasma layer on the wafer, changing the wafer's dielectric constant, turning the third port into a termination for incident RF signals, and. causing all incident RF signals to be reflected from the surface of the wafer. The propagation constant of RF signals through port 3, therefore, can be changed by controlling the beam. By making the RF coupling to the third port as small as necessary, one can reduce the peak electric field on the unexcited silicon surface for any level of input power from port 1, thereby reducing risk of damaging the wafer by RF with high peak power. The switch is useful to the construction of an improved pulse compression system to boost the peak power of microwave tubes driving linear accelerators. In this application, the high-power RF switch is placed at the coupling iris between the charging waveguide and the resonant storage line of a pulse compression system. This optically controlled high power RF pulse compression system can handle hundreds of Megawatts of power at X-band.

  3. Interprocessor bus switching system for simultaneous communication in plural bus parallel processing system

    DOE Patents [OSTI]

    Atac, Robert; Fischler, Mark S.; Husby, Donald E.

    1991-01-01

    A bus switching apparatus and method for multiple processor computer systems comprises a plurality of bus switches interconnected by branch buses. Each processor or other module of the system is connected to a spigot of a bus switch. Each bus switch also serves as part of a backplane of a modular crate hardware package. A processor initiates communication with another processor by identifying that other processor. The bus switch to which the initiating processor is connected identifies and secures, if possible, a path to that other processor, either directly or via one or more other bus switches which operate similarly. If a particular desired path through a given bus switch is not available to be used, an alternate path is considered, identified and secured.

  4. Interprocessor bus switching system for simultaneous communication in plural bus parallel processing system

    DOE Patents [OSTI]

    Atac, R.; Fischler, M.S.; Husby, D.E.

    1991-01-15

    A bus switching apparatus and method for multiple processor computer systems comprises a plurality of bus switches interconnected by branch buses. Each processor or other module of the system is connected to a spigot of a bus switch. Each bus switch also serves as part of a backplane of a modular crate hardware package. A processor initiates communication with another processor by identifying that other processor. The bus switch to which the initiating processor is connected identifies and secures, if possible, a path to that other processor, either directly or via one or more other bus switches which operate similarly. If a particular desired path through a given bus switch is not available to be used, an alternate path is considered, identified and secured. 11 figures.

  5. Low Group Delay Dispersion Optical Coating for Broad Bandwidth High Reflection at 45° Incidence, P Polarization of Femtosecond Pulses with 900 nm Center Wavelength

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bellum, John C.; Field, Ella S.; Winstone, Trevor B.; Kletecka, Damon E.

    2016-03-01

    We describe an optical coating design suitable for broad bandwidth high reflection (BBHR) at 45° angle of incidence (AOI), P polarization (Ppol) of femtosecond (fs) laser pulses whose wavelengths range from 800 to 1000 nm. The design process is guided by quarter-wave HR coating properties. Our design must afford low group delay dispersion (GDD) for reflected light over the broad, 200 nm bandwidth in order to minimize temporal broadening of the fs pulses due to dispersive alteration of relative phases between their frequency components. The design should also be favorable to high laser-induced damage threshold (LIDT). We base the coatingmore » on TiO2/SiO2 layer pairs produced by means of e-beam evaporation with ion-assisted deposition, and use OptiLayer Thin Film Software to explore designs starting with TiO2/SiO2 layers having thicknesses in a reverse chirped arrangement. This approach led to a design with R > 99% from 800 to 1000 nm and GDD < 20 fs2 from 843 to 949 nm (45° AOI, Ppol). The design’s GDD behaves in a smooth way, suitable for GDD compensation techniques, and its electric field intensities show promise for high LIDTs. Reflectivity and GDD measurements for the initial test coating indicate good performance of the BBHR design. Subsequent coating runs with improved process calibration produced two coatings whose HR bands satisfactorily meet the design goals. Lastly, for the sake of completeness, we summarize our previously reported transmission spectra and LIDT test results with 800 ps, 8 ps and 675 fs pulses for these two coatings, and present a table of the LIDT results we have for all of our TiO2/SiO2 BBHR coatings, showing the trends with test laser pulse duration from the ns to sub-ps regimes.« less

  6. Prediction of Acoustic Noise in Switched Reluctance Motor Drives

    SciTech Connect (OSTI)

    Lin, CJ; Fahimi, B

    2014-03-01

    Prediction of acoustic noise distribution generated by electric machines has become an integral part of design and control in noise sensitive applications. This paper presents a fast and precise acoustic noise imaging technique for switched reluctance machines (SRMs). This method is based on distribution of radial vibration in the stator frame of the SRM. Radial vibration of the stator frame, at a network of probing points, is computed using input phase current and phase voltage waveforms. Sequentially, the acceleration of the probing network will be expanded to predict full acceleration on the stator frame surface, using which acoustic noise emission caused by the stator can be calculated using the boundary element method.

  7. Transparent ceramic photo-optical semiconductor high power switches

    DOE Patents [OSTI]

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  8. Klystron switching power supplies for the Internation Linear Collider

    SciTech Connect (OSTI)

    Fraioli, Andrea; /Cassino U. /INFN, Pisa

    2009-12-01

    The International Linear Collider is a majestic High Energy Physics particle accelerator that will give physicists a new cosmic doorway to explore energy regimes beyond the reach of today's accelerators. ILC will complement the Large Hadron Collider (LHC), a proton-proton collider at the European Center for Nuclear Research (CERN) in Geneva, Switzerland, by producing electron-positron collisions at center of mass energy of about 500 GeV. In particular, the subject of this dissertation is the R&D for a solid state Marx Modulator and relative switching power supply for the International Linear Collider Main LINAC Radio Frequency stations.

  9. The design and analysis of multi-megawatt distributed single pole double throw (SPDT) microwave switches

    SciTech Connect (OSTI)

    Tantawi, S.G. [Stanford Linear Accelerator Center, SLAC, 2575 Sand Hill Rd. Menlo Park, California 94025 (United States)

    1999-05-01

    We present design methodology and analysis for an SPDT switch that is capable of handling hundreds of megawatts of power at X-band. The switch is designed for application in high power rf systems in particular future Linear Colliders (1). In these systems switching need to be fast in one direction only. We use this to our advantage to reach a design for a super high power switch. In our analysis we treat the problem from an abstract point of view. We introduce a unified analysis for the microwave circuits irrespective of the switching elements. The analysis is, then, suitable for different kinds of switching elements such as photoconductrs. PIN diodes, and plasma discharge in low-pressure gases. {copyright} {ital 1999 American Institute of Physics.}

  10. Methods for resistive switching of memristors (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Patent: Methods for resistive switching of memristors Citation Details In-Document Search Title: Methods for resistive switching of memristors The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an

  11. A Small Molecule That Switches a Ubiquitin Ligase From a Processive...

    Office of Scientific and Technical Information (OSTI)

    Title: A Small Molecule That Switches a Ubiquitin Ligase From a Processive to a Distributive Enzymatic Mechanism Authors: Kathman, Stefan G. ; Span, Ingrid ; Smith, Aaron T. ; Xu, ...

  12. Next-gen RF MEMS Switch for a Smarter, Faster Internet of Things...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    RF MEMS Switch for a Smarter, Faster Internet of Things Karen Lightman 2014.03.28 Big Data. Internet of Things. Quantified Self. Connected Home. Connected City. These...

  13. Analysis of reliable sub-ns spin-torque switching under transverse bias magnetic fields

    SciTech Connect (OSTI)

    D'Aquino, M.; Perna, S.; Serpico, C.; Bertotti, G.; Mayergoyz, I. D.

    2015-05-07

    The switching process of a magnetic spin-valve nanosystem subject to spin-polarized current pulses is considered. The dependence of the switching probability on the current pulse duration is investigated. The further application of a transverse field along the intermediate anisotropy axis of the particle is used to control the quasi-random relaxation of magnetization to the reversed magnetization state. The critical current amplitudes to realize the switching are determined by studying the phase portrait of the Landau-Lifshtz-Slonczewski dynamics. Macrospin numerical simulations are in good agreement with the theoretical prediction and demonstrate reliable switching even for very short (below 100 ps) current pulses.

  14. SEP Success Story: Louisiana Company Makes Switch to CNG, Helps Transform Local Fuel Supplies

    Broader source: Energy.gov [DOE]

    A Shreveport, Louisiana, company is switching to a locally-produced, cleaner source of fuel and helping other distribution fleets do the same. Learn more.

  15. Multiphase soft switched DC/DC converter and active control technique...

    Office of Scientific and Technical Information (OSTI)

    active control technique for fuel cell ripple current elimination Citation Details In-Document Search Title: Multiphase soft switched DCDC converter and active control technique ...

  16. Microstructure tuning and magnetism switching of ferroelectric barium titanate

    SciTech Connect (OSTI)

    Zhou, Wenliang; Deng, Hongmei; Ding, Nuofan; Yu, Lu; Yue, Fangyu; Yang, Pingxiong; Chu, Junhao

    2015-09-15

    Single-crystal and polycrystal BaTiO{sub 3} (BTO) materials synthesized by the physical and chemical methods, respectively, have been studied based on microstructural characterizations and magnetic measurements. The results of X-ray diffraction and Raman scatting spectra show that a single crystal tetragonal to polycrystalline pseudo-cubic structure transformation occurs in BTO ferroelectrics, dependent of growth conditions and interface effects. High-resolution transmission electron microscope data indicate that the as-prepared BTO/SrTiO{sub 3} (001) and BTO/SrRuO{sub 3}/SrTiO{sub 3} (001) heterostructures are highly c-axis oriented with atomic sharp interfaces. Lattice defects (i.e., edge-type misfit dislocations and stacking faults) in the heterostructures could be identified clearly and showed tunable with the variations of interface strain. Furthermore, the effects of vacancy defects on magnetic properties of BTO are discussed, which shows a diamagnetism–ferromagnetism switching as intrinsic vacancies increase. This work opens up a possible avenue to prepare magnetic BTO ferroelectrics. - Highlights: • Structure of BTO is tunable, depending on growth conditions and interface strain. • STEM–EDX data indicate the presence of lattice defects in BTO ferroelectrics. • BTO magnetism could be controlled by defects showing dia-ferromagnetism switching. • BTO with more vacancies shows RTFM, as evidence of vacancy magnetism effects.

  17. Ionic switch controls the DNA state in phage λ

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Dong; Liu, Ting; Zuo, Xiaobing; Li, Tao; Qiu, Xiangyun; Evilevitch, Alex

    2015-06-19

    We have recently found that DNA packaged in phage λ undergoes a disordering transition triggered by temperature, which results in increased genome mobility. This solid-to-fluid like DNA transition markedly increases the number of infectious λ particles facilitating infection. However, the structural transition strongly depends on temperature and ionic conditions in the surrounding medium. Using titration microcalorimetry combined with solution X-ray scattering, we mapped both energetic and structural changes associated with transition of the encapsidated λ-DNA. Packaged DNA needs to reach a critical stress level in order for transition to occur. We varied the stress on DNA in the capsid bymore » changing the temperature, packaged DNA length and ionic conditions. We found striking evidence that the intracapsid DNA transition is ‘switched on’ at the ionic conditions mimicking those in vivo and also at the physiologic temperature of infection at 37°C. This ion regulated on-off switch of packaged DNA mobility in turn affects viral replication. The results suggest a remarkable adaptation of phage λ to the environment of its host bacteria in the human gut. The metastable DNA state in the capsid provides a new paradigm for the physical evolution of viruses.« less

  18. Ionic switch controls the DNA state in phage λ

    SciTech Connect (OSTI)

    Li, Dong; Liu, Ting; Zuo, Xiaobing; Li, Tao; Qiu, Xiangyun; Evilevitch, Alex

    2015-06-19

    We have recently found that DNA packaged in phage λ undergoes a disordering transition triggered by temperature, which results in increased genome mobility. This solid-to-fluid like DNA transition markedly increases the number of infectious λ particles facilitating infection. However, the structural transition strongly depends on temperature and ionic conditions in the surrounding medium. Using titration microcalorimetry combined with solution X-ray scattering, we mapped both energetic and structural changes associated with transition of the encapsidated λ-DNA. Packaged DNA needs to reach a critical stress level in order for transition to occur. We varied the stress on DNA in the capsid by changing the temperature, packaged DNA length and ionic conditions. We found striking evidence that the intracapsid DNA transition is ‘switched on’ at the ionic conditions mimicking those in vivo and also at the physiologic temperature of infection at 37°C. This ion regulated on-off switch of packaged DNA mobility in turn affects viral replication. The results suggest a remarkable adaptation of phage λ to the environment of its host bacteria in the human gut. The metastable DNA state in the capsid provides a new paradigm for the physical evolution of viruses.

  19. ARM - Low Bandwidth Data Page

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for ISDAC (pdf, 525K) ISDAC Flight Planning Document (PDF, 216K) Collaborations Logistics Measurements & Platforms Contacts News News & Press Fact Sheets Images ARM flickr...

  20. The Finite Horizon Optimal Multi-Modes Switching Problem: The Viscosity Solution Approach

    SciTech Connect (OSTI)

    El Asri, Brahim Hamadene, Said

    2009-10-15

    In this paper we show existence and uniqueness of a solution for a system of m variational partial differential inequalities with inter-connected obstacles. This system is the deterministic version of the Verification Theorem of the Markovian optimal m-states switching problem. The switching cost functions are arbitrary. This problem is in relation with the valuation of firms in a financial market.

  1. Integration of planar transformer and/or planar inductor with power switches in power converter

    DOE Patents [OSTI]

    Chen, Kanghua; Ahmed, Sayeed; Zhu, Lizhi

    2007-10-30

    A power converter integrates at least one planar transformer comprising a multi-layer transformer substrate and/or at least one planar inductor comprising a multi-layer inductor substrate with a number of power semiconductor switches physically and thermally coupled to a heat sink via one or more multi-layer switch substrates.

  2. High gain photoconductive semiconductor switch having tailored doping profile zones

    DOE Patents [OSTI]

    Baca, Albert G.; Loubriel, Guillermo M.; Mar, Alan; Zutavern, Fred J; Hjalmarson, Harold P.; Allerman, Andrew A.; Zipperian, Thomas E.; O'Malley, Martin W.; Helgeson, Wesley D.; Denison, Gary J.; Brown, Darwin J.; Sullivan, Charles T.; Hou, Hong Q.

    2001-01-01

    A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

  3. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, Daniel W.; Lange, Arnold C.

    1996-01-01

    A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  4. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, D.W.; Lange, A.C.

    1996-10-15

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

  5. Spin switches for compact implementation of neuron and synapse

    SciTech Connect (OSTI)

    Quang Diep, Vinh Sutton, Brian; Datta, Supriyo; Behin-Aein, Behtash

    2014-06-02

    Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device based on established technology with a transistor-like gain and input-output isolation. This allows neural networks to be constructed with purely passive interconnections without intervening clocks or amplifiers. The weights for the neural network are conveniently adjusted through analog voltages that can be stored in a non-volatile manner in an underlying CMOS layer using a floating gate low dropout voltage regulator. The operation of a multi-layer SS neural network designed for character recognition is demonstrated using a standard simulation model based on coupled Landau-Lifshitz-Gilbert equations, one for each magnet in the network.

  6. VisIO: enabling interactive visualization of ultra-scale, time-series data via high-bandwidth distributed I/O systems

    SciTech Connect (OSTI)

    Mitchell, Christopher J; Ahrens, James P; Wang, Jun

    2010-10-15

    Petascale simulations compute at resolutions ranging into billions of cells and write terabytes of data for visualization and analysis. Interactive visuaUzation of this time series is a desired step before starting a new run. The I/O subsystem and associated network often are a significant impediment to interactive visualization of time-varying data; as they are not configured or provisioned to provide necessary I/O read rates. In this paper, we propose a new I/O library for visualization applications: VisIO. Visualization applications commonly use N-to-N reads within their parallel enabled readers which provides an incentive for a shared-nothing approach to I/O, similar to other data-intensive approaches such as Hadoop. However, unlike other data-intensive applications, visualization requires: (1) interactive performance for large data volumes, (2) compatibility with MPI and POSIX file system semantics for compatibility with existing infrastructure, and (3) use of existing file formats and their stipulated data partitioning rules. VisIO, provides a mechanism for using a non-POSIX distributed file system to provide linear scaling of 110 bandwidth. In addition, we introduce a novel scheduling algorithm that helps to co-locate visualization processes on nodes with the requested data. Testing using VisIO integrated into Para View was conducted using the Hadoop Distributed File System (HDFS) on TACC's Longhorn cluster. A representative dataset, VPIC, across 128 nodes showed a 64.4% read performance improvement compared to the provided Lustre installation. Also tested, was a dataset representing a global ocean salinity simulation that showed a 51.4% improvement in read performance over Lustre when using our VisIO system. VisIO, provides powerful high-performance I/O services to visualization applications, allowing for interactive performance with ultra-scale, time-series data.

  7. Threshold Switching Characteristics of Nb/NbO2/TiN Vertical Devices

    SciTech Connect (OSTI)

    Wang, Yuhan; Comes, Ryan B.; Wolf, Stuart A.; Lu, Jiwei

    2015-11-25

    Nb/NbO2/TiN vertical structures were synthesized in-situ and patterned to devices with different contact areas. The devices exhibited threshold resistive switching with minimal hysteresis and a small EThreshold (60~90 kV/cm). The switching behavior was unipolar, and demonstrated good repeatability. A less sharp but still sizable change in the device resistance was observed up to 150 °C. It was found that the resistive switching without Nb capping layer exhibited the hysteretic behavior and much larger EThreshold (~250 kV/cm) likely due to a 2-3 nm surface Nb2O5 layer. The stable threshold switching behavior well above room temperature shows the potential applications of this device as an electronic switch.

  8. Fast deterministic switching in orthogonal spin torque devices via the control of the relative spin polarizations

    SciTech Connect (OSTI)

    Park, Junbo; Buhrman, R. A.; Ralph, D. C.; Kavli Institute at Cornell, Ithaca, New York 14853

    2013-12-16

    We model 100 ps pulse switching dynamics of orthogonal spin transfer (OST) devices that employ an out-of-plane polarizer and an in-plane polarizer. Simulation results indicate that increasing the spin polarization ratio, C{sub P}?=?P{sub IPP}/P{sub OPP}, results in deterministic switching of the free layer without over-rotation (360 rotation). By using spin torque asymmetry to realize an enhanced effective P{sub IPP}, we experimentally demonstrate this behavior in OST devices in parallel to anti-parallel switching. Modeling predicts that decreasing the effective demagnetization field can substantially reduce the minimum C{sub P} required to attain deterministic switching, while retaining low critical switching current, I{sub p}???500??A.

  9. Passive Q-switching of a diode-pumped neodymium:YAG laser

    SciTech Connect (OSTI)

    Morris, J.A.

    1991-01-01

    Compact diode-pumped neodymium:YAG lasers are becoming common commercial devices. Such lasers are often Q-switched to enhance peak power or to allow greater harmonic conversion efficiency. Active electrooptic or acoustooptic modulators are usually used to Q-switch YAG lasers. While these techniques work well, they do require expensive and bulky modulators and driving electronics. For some applications a simpler technique, such as passive Q-switching, could replace these active Q-switches. This thesis investigates the suitability of two color center materials as possible saturable absorbers for compact Nd:YAG lasers. The first material, lithium fluoride with F{sub 2}{sup {minus}} defects, has been used previously as a Q-switch for flashlamp-pumped Nd:YAG lasers. The second material, sodium chloride with F{sub 2}{sup +} defects, has not, to the author's knowledge, been used as a saturable absorber in a YAG laser. Lithium fluoride was found to be an excellent Q-switch material for a small diode-pumped YAG laser. The passively Q-switched pulses were comparable to the best results using active Q-switches. The LiF saturable absorber material is compact, inexpensive, and easy to prepare. The only discovered drawback to this material is the observation of a gradual bleaching of the saturable absorption with extended use at high peak powers. This thesis describes the properties and preparation of the LiF Q-switch material. The use of colored sodium chloride as a Q-switch material is also described. This material has the unique property that the amount of saturable loss in a particular crystal direction can be dynamically adjusted through the action of polarized light incident on the crystal.

  10. Adsorption and switching properties of a N-benzylideneaniline based molecular switch on a Au(111) surface

    SciTech Connect (OSTI)

    Ovari, Laszlo; Luo, Ying; Haag, Rainer; Leyssner, Felix; Tegeder, Petra; Wolf, Martin

    2010-07-28

    High resolution electron energy loss spectroscopy has been employed to analyze the adsorption geometry and the photoisomerization ability of the molecular switch carboxy-benzylideneaniline (CBA) adsorbed on Au(111). CBA on Au(111) adopts a planar (trans) configuration in the first monolayer (ML) as well as for higher coverages (up to 6 ML), in contrast to the strongly nonplanar geometry of the molecule in solution. Illumination with UV light of CBA in direct contact with the Au(111) surface ({<=}1 ML) caused no changes in the vibrational structure, whereas at higher coverages (>1 ML) pronounced modifications of vibrational features were observed, which we assign to a trans{yields}cis isomerization. Thermal activation induced the back reaction to trans-CBA. We propose that the photoisomerization is driven by a direct (intramolecular) electronic excitation of the adsorbed CBA molecules in the second ML (and above) analogous to CBA in the liquid phase.

  11. Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

    SciTech Connect (OSTI)

    Ievlev, Anton; Morozovska, A. N.; Eliseev, E. A.; Shur, Vladimir Ya.; Kalinin, Sergei V

    2014-01-01

    Electric field induced polarization switching underpins most functional applications of ferroelectric materials in information technology, materials science, and optoelectronics. In the last 20 years, much attention has been focused on the switching of individual domains using scanning probe microscopy, both as model of ferroelectric data storage and approach to explore fundamental physics of ferroelectric switching. The classical picture of tip induced switching includes formation of cylindrical domain oriented along the tip field, with the domain size is largely determined by the tip-induced field distribution and domain wall motion kinetics. The polarization screening is recognized as a necessary precondition to the stability of ferroelectric phase; however, screening processes are generally considered to be uniformly efficient and not leading to changes in switching behavior. Here, we demonstrate that single-point tip-induced polarization switching can give rise to a surprisingly broad range of domain morphologies, including radial and angular instabilities. These behaviors are traced to the surface screening charge dynamics, which in some cases can even give rise to anomalous switching against the electric field (ionic field effect). The implications of these behaviors for ferroelectric materials and devices are discussed.

  12. Low jitter spark gap switch for repetitively pulsed parallel capacitor banks

    SciTech Connect (OSTI)

    Rohwein, G. J.

    1980-01-01

    A two-section air insulated spark gap has been developed for switching multi-kilojoule plus-minus charged parallel capacitor banks which operate continuously at pulse rates up to 20 pps. The switch operates with less than 2 ns jitter, recovers its dielectric strength within 2 to 5 ms and has not shown degraded performance in sequential test runs totaling over a million shots. Its estimated life with copper electrodes is > 10/sup 7/ shots. All preliminary tests indicate that the switch is suitable for continuous running multi-kilojoule systems operating to at least 20 pps.

  13. Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation

    SciTech Connect (OSTI)

    Ohno, Takeo; Samukawa, Seiji

    2015-04-27

    Resistive switching in a Cu/Ta{sub 2}O{sub 5}/Pt structure that consisted of a few nanometer-thick Ta{sub 2}O{sub 5} film was demonstrated. The Ta{sub 2}O{sub 5} film with thicknesses of 25?nm was formed with a combination of Ta metal film deposition and neutral oxygen particle irradiation at room temperature. The device exhibited a bipolar resistive switching with a threshold voltage of 0.2?V and multilevel switching operation.

  14. Effects of graphene on electro-optic switching and spontaneous polarization of a ferroelectric liquid crystal

    SciTech Connect (OSTI)

    Basu, Rajratan, E-mail: basu@usna.edu [Department of Physics, Soft-matter and Nanomaterials Laboratory, The United States Naval Academy, Annapolis, Maryland 21402 (United States)

    2014-09-15

    A small quantity of graphene flakes was doped in a ferroelectric liquid crystal (FLC), and the field-induced ferroelectric electro-optic switching was found to be significantly faster in the FLC + graphene hybrid than that of the pure FLC. Further studies revealed that the suspended graphene flakes enhanced the FLC's spontaneous polarization by improving smectic-C ordering resulting from the ?? electron stacking, and reduced rotation viscosity by trapping some of the free ions of the FLC media. These effects coherently impacted the FLC-switching phenomenon, enabling the FLC molecules to switch faster on reversing an external electric field.

  15. Differential ultrafast all-optical switching of the resonances of a micropillar cavity

    SciTech Connect (OSTI)

    Thyrrestrup, Henri Yce, Emre; Ctistis, Georgios; Vos, Willem L.; Claudon, Julien; Grard, Jean-Michel

    2014-09-15

    We perform frequency- and time-resolved all-optical switching of a GaAs-AlAs micropillar cavity using an ultrafast pump-probe setup. The switching is achieved by two-photon excitation of free carriers. We track the cavity resonances in time with a high frequency resolution. The pillar modes exhibit simultaneous frequency shifts, albeit with markedly different maximum switching amplitudes and relaxation dynamics. These differences stem from the non-uniformity of the free carrier density in the micropillar, and are well understood by taking into account the spatial distribution of injected free carriers, their spatial diffusion and surface recombination at micropillar sidewalls.

  16. Thermionic switched self-actuating reactor shutdown system

    DOE Patents [OSTI]

    Barrus, Donald M. (San Jose, CA); Shires, Charles D. (San Jose, CA); Brummond, William A. (Livermore, CA)

    1989-01-01

    A self-actuating reactor shutdown system incorporating a thermionic switched electromagnetic latch arrangement which is responsive to reactor neutron flux changes and to reactor coolant temperature changes. The system is self-actuating in that the sensing thermionic device acts directly to release (scram) the control rod (absorber) without reference or signal from the main reactor plant protective and control systems. To be responsive to both temperature and neutron flux effects, two detectors are used, one responsive to reactor coolant temperatures, and the other responsive to reactor neutron flux increase. The detectors are incorporated into a thermionic diode connected electrically with an electromagnetic mechanism which under normal reactor operating conditions holds the the control rod in its ready position (exterior of the reactor core). Upon reaching either a specified temperature or neutron flux, the thermionic diode functions to short-circuit the electromagnetic mechanism causing same to lose its holding power and release the control rod, which drops into the reactor core region under gravitational force.

  17. Metal-to-insulator switching in quantum anomalous Hall states

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kou, Xufeng; Pan, Lei; Wang, Jing; Fan, Yabin; Choi, Eun Sang; Lee, Wei -Li; Nie, Tianxiao; Murata, Koichi; Shao, Qiming; Zhang, Shou -Cheng; et al

    2015-10-07

    After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the six quintuple-layer (Cr0.12Bi0.26Sb0.62)2Te3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phase diagram is confirmed through themore » angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. Additionally, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.« less

  18. Metal-to-insulator switching in quantum anomalous Hall states

    SciTech Connect (OSTI)

    Kou, Xufeng; Pan, Lei; Wang, Jing; Fan, Yabin; Choi, Eun Sang; Lee, Wei -Li; Nie, Tianxiao; Murata, Koichi; Shao, Qiming; Zhang, Shou -Cheng; Wang, Kang L.

    2015-10-07

    After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the six quintuple-layer (Cr0.12Bi0.26Sb0.62)2Te3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phase diagram is confirmed through the angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. Additionally, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.

  19. Deterministic Arbitrary Switching of Polarization in a Ferroelectric Thin Film

    SciTech Connect (OSTI)

    Vasudevan, Rama K [ORNL; Matsumoto, Yuji [Tohoku University, Sendai, Japan; Cheng, Xuan [University of New South Wales, Sydney, Australia; Imai, Akira [Tokyo Institute of Technology; Maruyama, Shingo [Tohoku University, Sendai, Japan; Xin, Huolin L. [Brookhaven National Laboratory (BNL); Okatan, Mahmut B [ORNL; Jesse, Stephen [ORNL; Kalinin, Sergei V [ORNL; Nagarajan, Valanoor [University of New South Wales

    2014-01-01

    Ferroelectrics have been used as memory storage devices, with an upper bound on the total possible memory levels generally dictated by the number of degenerate states allowed by the symmetry of the ferroelectric phase. Here, we introduce a new concept for storage wherein the polarization can be rotated arbitrarily, effectively decoupling it from the crystallographic symmetry of the ferroelectric phase on the mesoscale. By using a Bi5Ti3FeO15-CoFe2O4 film and via Band-Excitation Piezoresponse Force Microscopy, we show the ability to arbitrarily rotate polarization, create a spectrum of switched states, and suggest the reason for the polarization rotation is an abundance of sub-50nm nanodomains. Transmission electron microscopy-based strain mapping confirms significant local strain undulations imparted on the matrix by the CoFe2O4 inclusions, which causes significant local disorder. These experiments point to controlled tuning of polarization rotation in a standard ferroelectric, and hence the potential to greatly extend the attainable densities for ferroelectric memories.

  20. Hybrid plasmonic nanodevices: Switching mechanism for the nonlinear emission

    SciTech Connect (OSTI)

    Bragas, Andrea V.; Singh, Mahi R.

    2014-03-31

    Control of the light emission at the nanoscale is of central interest in nanophotonics due to the many applications in very different fields, ranging from quantum information to biophysics. Resonant excitation of surface plasmon polaritons in metal nanoparticles create nanostructured and enhanced light fields around those structures, which produce their strong interaction in a hybrid nanodevice with other plasmonic or non-plasmonic objects. This interaction may in turn also modulate the far field with important consequences in the applications. We show in this paper that the nonlinear emission from semiconductor quantum dots is strongly affected by the close presence of metal nanoparticles, which are resonantly excited. Using a pulsed laser, optical second harmonic is generated in the quantum dot, and it is highly enhanced when the laser is tuned around the nanoparticle plasmon resonance. Even more interesting is the demonstration of a switching mechanism, controlled by an external continuous-wave field, which can enhance or extinguish the SH signal, even when the pulsed laser is always on. Experimental observations are in excellent agreement with the theoretical calculations, based on the dipole-dipole near-field coupling of the objects forming the hybrid system.

  1. InfiniBand Interconnects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MPICH2 MVAPICH2 Equipment InfiniBand 4x 10 GigE Fujitsu switch NetEffect NIC Equipment & Benchmarks Latency Results Bandwidth Results Bidirectional Bandwidth...

  2. Influence of ion irradiation on switching field and switching field distribution in arrays of Co/Pd-based bit pattern media

    SciTech Connect (OSTI)

    Hauet, T.; Hellwig, O.; Dobisz, E.; Terris, B. D.; Park, S.-H.; Ravelosona, D.; Beigne, C.

    2011-04-25

    We have used ion irradiation to tune switching field and switching field distribution (SFD) in polycrystalline Co/Pd multilayer-based bit pattern media. Light He{sup +} ion irradiation strongly decreases perpendicular magnetic anisotropy amplitude due to Co/Pd interface intermixing, while the granular structure, i.e., the crystalline anisotropy, remains unchanged. In dot arrays, the anisotropy reduction leads to a decrease in coercivity (H{sub C}) but also to a strong broadening of the normalized SFD/H{sub C} (in percentage), since the relative impact of misaligned grains is enhanced. Our experiment thus confirms the major role of misorientated grains in SFD of nanodevice arrays.

  3. Electro-optic harmonic conversion to switch a laser beam out of a cavity

    DOE Patents [OSTI]

    Haas, R.A.; Henesian, M.A.

    1984-10-19

    The present invention relates to switching laser beams out of laser cavities, and more particularly, it relates to the use of generating harmonics of the laser beam to accomplish the switching. When laser light is generatd in a laser cavity the problem arises of how to switch the laser light out of the cavity in order to make use of the resulting laser beam in a well known multitude of ways. These uses include range finding, communication, remote sensing, medical surgery, laser fusion applications and many more. The switch-out problem becomes more difficult as the size of the laser aperture grows such as in laser fusion applications. The final amplifier stages of the Nova and Novette lasers at Lawrence Livermore National Laboratory are 46 centimeters with the laser beam expanded to 74 centimeters thereafter. Larger aperture lasers are planned.

  4. A switch III motif relays signaling between a B[subscript 12...

    Office of Scientific and Technical Information (OSTI)

    12 enzyme and its G-protein chaperone Citation Details In-Document Search Title: A switch III motif relays signaling between a Bsubscript 12 enzyme and its G-protein chaperone ...

  5. Switching of the Spin-Density-Wave in CeCoIn5 probed by Thermal...

    Office of Scientific and Technical Information (OSTI)

    Title: Switching of the Spin-Density-Wave in CeCoIn5 probed by Thermal Conductivity Authors: Kim, Duk Young 1 ; Lin, Shizeng 1 ; Weickert, Franziska 2 ; Bauer, Eric Dietzgen ...

  6. Thread selection according to predefined power characteristics during context switching on compute nodes

    DOE Patents [OSTI]

    None

    2013-06-04

    Methods, apparatus, and products are disclosed for thread selection during context switching on a plurality of compute nodes that includes: executing, by a compute node, an application using a plurality of threads of execution, including executing one or more of the threads of execution; selecting, by the compute node from a plurality of available threads of execution for the application, a next thread of execution in dependence upon power characteristics for each of the available threads; determining, by the compute node, whether criteria for a thread context switch are satisfied; and performing, by the compute node, the thread context switch if the criteria for a thread context switch are satisfied, including executing the next thread of execution.

  7. A Low Hysteresis NiTiFe Shape Memory Alloy Based Thermal Conduction Switch

    SciTech Connect (OSTI)

    Lemanski, J. L.; Krishnan, V. B.; Manjeri, R. Mahadevan; Vaidyanathan, R.; Notardonato, W. U.

    2006-03-31

    Shape memory alloys possess the ability to return to a preset shape by undergoing a solid state phase transformation at a particular temperature. This work reports on the development and testing of a low temperature thermal conduction switch that incorporates a NiTiFe shape memory element for actuation. The switch was developed to provide a variable conductive pathway between liquid methane and liquid oxygen dewars in order to passively regulate the temperature of methane. The shape memory element in the switch undergoes a rhombohedral or R-phase transformation that is associated with a small hysteresis (typically 1-2 deg. C) and offers the advantage of precision control over a set temperature range. For the NiTiFe alloy used, its thermomechanical processing, subsequent characterization using dilatometry, differential scanning calorimetry and implementation in the conduction switch configuration are addressed.

  8. Electric field-induced magnetic switching in Mn:ZnO film

    SciTech Connect (OSTI)

    Ren, S. X.; Sun, G. W.; Zhao, J.; Dong, J. Y.; Zhao, X.; Chen, W.; Wei, Y.; Ma, Z. C.

    2014-06-09

    A large magnetic modulation, accompanied by stable bipolar resistive switching (RS) behavior, was observed in a Mn:ZnO film by applying a reversible electric field. A significant enhancement of the ferromagnetism of the film, to about five times larger than that in the initial (as-grown) state (IS), was obtained by switching the film into the low resistance state. X-ray photoelectron spectroscopy demonstrated the existence of abundant oxygen vacancies in the IS of the film. We suggest that this electric field-induced magnetic switching effect originates with the migration and redistribution of oxygen vacancies during RS. Our work indicates that electric switching is an effective and simple method to increase the ferromagnetism of diluted magnetic oxide films. This provides a promising direction for research in spintronic devices.

  9. Slideshow: Flipping the Switch on LED Lighting for the National Mall

    Broader source: Energy.gov [DOE]

    Last night, Energy Secretary Steven Chu and Interior Secretary Ken Salazar ushered in a new era for energy efficiency on the National Mall when they flipped the switch on LED lights in 174 vintage Olmsted lampposts.

  10. Ultrashort pulse laser-triggering of long gap high voltage switches...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: Ultrashort pulse laser-triggering of long gap high voltage switches. Citation Details In-Document Search Title: Ultrashort pulse laser-triggering of long gap high ...

  11. Current dependence of spin torque switching rate based on Fokker-Planck approach

    SciTech Connect (OSTI)

    Taniguchi, Tomohiro Imamura, Hiroshi

    2014-05-07

    The spin torque switching rate of an in-plane magnetized system in the presence of an applied field is derived by solving the Fokker-Planck equation. It is found that three scaling currents are necessary to describe the current dependence of the switching rate in the low-current limit. The dependences of these scaling currents on the applied field strength are also studied.

  12. PPPL lends General Electric a hand in developing an advanced power switch |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Princeton Plasma Physics Lab lends General Electric a hand in developing an advanced power switch By John Greenwald August 28, 2014 Tweet Widget Google Plus One Share on Facebook Laboratory test of a liquid-metal cathode. (Photo by General Electric Co. ) Laboratory test of a liquid-metal cathode. Scientists at the U.S. Department of Energy's (DOE) Princeton Plasma Physics Laboratory (PPPL) are assisting General Electric Co. in developing an electrical switch that could help lower utility

  13. Viscosity Solutions of Systems of PDEs with Interconnected Obstacles and Switching Problem

    SciTech Connect (OSTI)

    Hamadene, S. Morlais, M. A.

    2013-04-15

    This paper deals with existence and uniqueness of a solution in viscosity sense, for a system of m variational partial differential inequalities with inter-connected obstacles. A particular case is the Hamilton-Jacobi-Bellmann system of the Markovian stochastic optimal m-states switching problem. The switching cost functions depend on (t,x). The main tool is the notion of systems of reflected backward stochastic differential equations with oblique reflection.

  14. Binary and ternary gas mixtures for use in glow discharge closing switches

    DOE Patents [OSTI]

    Hunter, Scott R.; Christophorou, Loucas G.

    1990-01-01

    Highly efficient binary and ternary gas mixtures for use in diffuse glow discharge closing switches are disclosed. The binary mixtures are combinations of helium or neon and selected perfluorides. The ternary mixtures are combinations of helium, neon, or argon, a selected perfluoride, and a small amount of gas that exhibits enhanced ionization characteristics. These mixtures are shown to be the optimum choices for use in diffuse glow discharge closing switches by virtue of the combined physio-electric properties of the mixture components.

  15. Louisiana Company Makes Switch to CNG, Helps Transform Local Fuel Supplies

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    | Department of Energy Louisiana Company Makes Switch to CNG, Helps Transform Local Fuel Supplies Louisiana Company Makes Switch to CNG, Helps Transform Local Fuel Supplies April 23, 2014 - 1:43pm Addthis Shreveport, Louisiana's first public heavy duty CNG fueling station officially opened on Earth Day. | Photo courtesy of Ivan Smith Furniture Shreveport, Louisiana's first public heavy duty CNG fueling station officially opened on Earth Day. | Photo courtesy of Ivan Smith Furniture Cedric

  16. Method for wiring allocation and switch configuration in a multiprocessor environment

    DOE Patents [OSTI]

    Aridor, Yariv; Domany, Tamar; Frachtenberg, Eitan; Gal, Yoav; Shmueli, Edi; Stockmeyer, legal representative, Robert E.; Stockmeyer, Larry Joseph

    2008-07-15

    A method for wiring allocation and switch configuration in a multiprocessor computer, the method including employing depth-first tree traversal to determine a plurality of paths among a plurality of processing elements allocated to a job along a plurality of switches and wires in a plurality of D-lines, and selecting one of the paths in accordance with at least one selection criterion.

  17. A Small Molecule That Switches a Ubiquitin Ligase From a Processive to a

    Office of Scientific and Technical Information (OSTI)

    Distributive Enzymatic Mechanism (Journal Article) | SciTech Connect A Small Molecule That Switches a Ubiquitin Ligase From a Processive to a Distributive Enzymatic Mechanism Citation Details In-Document Search Title: A Small Molecule That Switches a Ubiquitin Ligase From a Processive to a Distributive Enzymatic Mechanism Authors: Kathman, Stefan G. ; Span, Ingrid ; Smith, Aaron T. ; Xu, Ziyang ; Zhan, Jennifer ; Rosenzweig, Amy C. ; Statsyuk, Alexander V. [1] + Show Author Affiliations

  18. Get Current: Switch on Clean Energy Activity Book | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Activity Book Get Current: Switch on Clean Energy Activity Book Below is information about the student activity/lesson plan from your search. Grades K-4, 5-8, 9-12 Subject Energy Basics Summary Switching on clean energy technologies means strengthening the economy while protecting the environment. This activity book for all ages promotes energy awareness, with facts on different types of energy and a variety of puzzles in an energy theme. Curriculum Science, Mathematics, Language Arts Plan Time

  19. NERSC Helps Researchers Discover a Potential On-Off Switch for

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nanoelectronics Researchers Discover a Potential On-Off Switch for Nanoelectronics NERSC Helps Researchers Discover a Potential On-Off Switch for Nanoelectronics December 22, 2009 Researchers at the Lawrence Berkeley National Laboratory's (Berkeley Lab) Molecular Foundry and Columbia University found that electrical resistance through a molecular junction-a nanometer scale circuit element consisting of a single molecule contacted with gold wires-can be turned on and off by simply pushing and

  20. Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

    DOE Patents [OSTI]

    Sumant, Anirudha V.; Auciello, Orlando H.; Mancini, Derrick C.

    2013-01-15

    An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.

  1. Ultrashort pulse laser-triggering of long gap high voltage switches.

    Office of Scientific and Technical Information (OSTI)

    (Technical Report) | SciTech Connect Technical Report: Ultrashort pulse laser-triggering of long gap high voltage switches. Citation Details In-Document Search Title: Ultrashort pulse laser-triggering of long gap high voltage switches. Authors: Rambo, Patrick K. ; Schwarz, Jens ; Kimmel, Mark W. ; Van Tassle, Aaron J. ; Urayama, Junji ; Welch, Dale Robert [1] ; Rose, David V. [1] ; Thoma, Carsten [1] ; Clark, Robert E. [1] ; Miller, Craig [1] ; Zimmerman, William R. [1] ; Pitts, Todd Alan ;

  2. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, Daniel W.; Lange, Arnold C.

    1997-01-01

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

  3. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, D.W.; Lange, A.C.

    1997-03-11

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360{degree}/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs.

  4. The universal criterion for switching a magnetic vortex core in soft magnetic nanodots

    SciTech Connect (OSTI)

    Lee, K.-S.; Kim, S.-K.; Yu, Y.-S.; Choi, Y.-S.; Guslienko, K. Y.; Jung, H.; Fischer, P.

    2008-10-01

    The universal criterion for ultrafast vortex core switching between core-up and -down vortex bi-states in soft magnetic nanodots was empirically investigated by micromagnetic simulations and combined with an analytical approach. Vortex-core switching occurs whenever the velocity of vortex core motion reaches a critical value, which is {nu}{sub c} = 330 {+-} 37 m/s for Permalloy, as estimated from numerical simulations. This critical velocity was found to be {nu}{sub c} = {eta}{sub c}{gamma} {radical}A{sub ex} with A{sub ex} the exchange stiffness, {gamma} the gyromagnetic ratio, and an estimated proportional constant {eta}{sub c} = 1.66 {+-} 0.18. This criterion does neither depend on driving force parameters nor on the dimension or geometry of the magnetic specimen. The phase diagrams for the vortex core switching criterion and its switching time with respect to both the strength and angular frequency of circular rotating magnetic fields were derived, which offer practical guidance for implementing vortex core switching into future solid state information storage devices.

  5. A Soft-Switching Inverter for High-Temperature Advanced Hybrid Electric Vehicle Traction Motor Drives

    SciTech Connect (OSTI)

    None, None

    2012-01-31

    The state-of-the-art hybrid electric vehicles (HEVs) require the inverter cooling system to have a separate loop to avoid power semiconductor junction over temperatures because the engine coolant temperature of 105?C does not allow for much temperature rise in silicon devices. The proposed work is to develop an advanced soft-switching inverter that will eliminate the device switching loss and cut down the power loss so that the inverter can operate at high-temperature conditions while operating at high switching frequencies with small current ripple in low inductance based permanent magnet motors. The proposed tasks also include high-temperature packaging and thermal modeling and simulation to ensure the packaged module can operate at the desired temperature. The developed module will be integrated with the motor and vehicle controller for dynamometer and in-vehicle testing to prove its superiority. This report will describe the detailed technical design of the soft-switching inverters and their test results. The experiments were conducted both in module level for the module conduction and switching characteristics and in inverter level for its efficiency under inductive and dynamometer load conditions. The performance will be compared with the DOE original specification.

  6. Fuel switching in the electricity sector under the EU ETS: Review and prospective

    SciTech Connect (OSTI)

    Delarue, E.; Voorspools, K.; D'haeseleer, W.

    2008-06-15

    The European Union has implemented the European Union emission trading scheme (EU ETS) as an instrument to facilitate greenhouse gas (GHG) emission abatement stipulated in the Kyoto protocol. Empirical data show that in the early stages of the EU ETS, the value of a ton of CO{sub 2} has already led to emission abatement through switching from coal to gas in the European electric power sector. In the second part of this paper, an electricity generation simulation model is used to perform simulations on the switching behavior in both the first and the second trading periods of the EU ETS. In 2005, the reduction in GHG emissions in the electric power sector due to EU ETS is estimated close to 88 Mton. For the second trading period, a European Union allowance (EUA) price dependent GHG reduction curve has been determined. The obtained switching potential turns out to be significant, up to 300 Mton/year, at sufficiently high EUA prices.

  7. Single Molecule Switches and Molecular Self-Assembly: Low Temperature STM Investigations and Manipulations

    SciTech Connect (OSTI)

    Iancu, Violeta

    2006-08-01

    This dissertation is devoted to single molecule investigations and manipulations of two porphyrin-based molecules, chlorophyll-a and Co-popphyrin. The molecules are absorbed on metallic substrates and studied at low temperatures using a scanning tunneling microscope. The electronic, structural and mechanical properties of the molecules are investigated in detail with atomic level precision. Chlorophyll-a is the key ingredient in photosynthesis processes while Co-porphyrin is a magnetic molecule that represents the recent emerging field of molecular spintronics. Using the scanning tunneling microscope tip and the substrate as electrodes, and the molecules as active ingredients, single molecule switches made of these two molecules are demonstrated. The first switch, a multiple and reversible mechanical switch, is realized by using chlorophyll-a where the energy transfer of a single tunneling electron is used to rotate a C-C bond of the molecule's tail on a Au(111) surface. Here, the det

  8. Bimodal switching field distributions in all-perpendicular spin-valve nanopillars

    SciTech Connect (OSTI)

    Gopman, D. B. Kent, A. D.; Bedau, D.; Katine, J. A.; Mangin, S.; Fullerton, E. E.

    2014-05-07

    Switching field measurements of the free layer element of 75 nm diameter spin-valve nanopillars reveal a bimodal distribution of switching fields at low temperatures (below 100 K). This result is inconsistent with a model of thermal activation over a single perpendicular anisotropy barrier. The correlation between antiparallel to parallel and parallel to antiparallel switching fields increases to nearly 50% at low temperatures. This reflects random fluctuation of the shift of the free layer hysteresis loop between two different magnitudes, which may originate from changes in the dipole field from the polarizing layer. The magnitude of the loop shift changes by 25% and is correlated to transitions of the spin-valve into an antiparallel configuration.

  9. Resistive switching characteristics of polycrystalline SrTiO{sub 3} films

    SciTech Connect (OSTI)

    Jong Choi, Hyung; Won Park, Suk; Deok Han, Gwon; Hyung Shim, Joon; Na, Junhong; Kim, Gyu-Tae

    2014-06-16

    Strontium titanate (STO) thin films 90?nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800?C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (10{sup 8}10{sup 9}) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed.

  10. Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

    DOE Patents [OSTI]

    Hohimer, J.P.

    1994-06-07

    A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure. 6 figs.

  11. Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

    DOE Patents [OSTI]

    Hohimer, John P. (Albuquerque, NM)

    1994-01-01

    A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.

  12. Filament formation and erasure in molybdenum oxide during resistive switching cycles

    SciTech Connect (OSTI)

    Kudo, Masaki; Arita, Masashi Ohno, Yuuki; Takahashi, Yasuo

    2014-10-27

    In-situ filament observations were carried out on the Cu/MoO{sub x}/TiN resistive random access memory (ReRAM) by using transmission electron microscopy. Multiple positive and negative I-V cycles were investigated. Clear set-reset bipolar switch corresponding to the characteristics of conventional ReRAM devices was recognized. Filament grew from TiN to Cu in the set cycle and shrank from TiN to Cu in the reset cycle. However, there was no clear contrast change in the image at the switching moment, and thus, switching is thought to occur in a local region of the filament. When the current was large at reset, the filament shrank much, and its position tended to change.

  13. Small autonomous passively Q-switched Nd{sup 3+}:YAG laser with a Cr{sup 4+}:YAG Q switch emitting pulse trains

    SciTech Connect (OSTI)

    Buzinov, N M; Dmitriev, Valentin G; Zabavin, V N; Kazakov, A A; Maslov, A A; Spitsyn, E M

    2007-04-30

    The energy and time characteristics of a passively Q-switched Nd{sup 3+}:YAG laser with a Cr{sup 4+}:YAG Q switch emitting pulse trains are studied and analysed theoretically. The description and technical parameters of a small autonomous laser with intracavity second-harmonic generation (ICSHG) in the pulse-train regime are presented. The laser provides a high total pulse-train energy for a relatively low peak power of a single pulse, stable operation in a wide temperature range, and has a small weight and size, which is convenient in operation. The enhanced reliability and stability of the laser operation are provided by its original technical design: the ICSHG scheme for type II phase matching without polarisers, the use of temperature-noncritical phase matching in KTP crystals, dust- and moisture-proof casing, and battery-operated pulsed power supply for the pump flashlamp. (lasers)

  14. Optimization of spin-torque switching using AC and DC pulses

    SciTech Connect (OSTI)

    Dunn, Tom; Kamenev, Alex

    2014-06-21

    We explore spin-torque induced magnetic reversal in magnetic tunnel junctions using combined AC and DC spin-current pulses. We calculate the optimal pulse times and current strengths for both AC and DC pulses as well as the optimal AC signal frequency, needed to minimize the Joule heat lost during the switching process. The results of this optimization are compared against numeric simulations. Finally, we show how this optimization leads to different dynamic regimes, where switching is optimized by either a purely AC or DC spin-current, or a combination AC/DC spin-current, depending on the anisotropy energies and the spin-current polarization.

  15. Texas County "Flips The Switch" On New Energy-Efficient Complex |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Texas County "Flips The Switch" On New Energy-Efficient Complex Texas County "Flips The Switch" On New Energy-Efficient Complex March 7, 2011 - 5:17pm Addthis Fifth graders from Pharr-San Juan-Alamo Independent School District’s North Alamo Elementary celebrate the opening of the new Precinct 2 Multi-Purpose Facility and Administration Complex in Hidalgo County, TX. The students received tours of the facility and heard presentations from vendors

  16. Emission switching in carbon dots coated CdTe quantum dots driving by pH

    Office of Scientific and Technical Information (OSTI)

    dependent hetero-interactions (Journal Article) | SciTech Connect Emission switching in carbon dots coated CdTe quantum dots driving by pH dependent hetero-interactions Citation Details In-Document Search Title: Emission switching in carbon dots coated CdTe quantum dots driving by pH dependent hetero-interactions Due to the different emission mechanism between fluorescent carbon dots and semiconductor quantum dots (QDs), it is of interest to explore the potential emission in

  17. Binary and ternary gas mixtures for use in glow discharge closing switches

    DOE Patents [OSTI]

    Hunter, S.R.; Christophorou, L.G.

    1988-04-27

    Highly efficient binary and ternary gas mixtures for use in diffuse glow discharge closing switches are disclosed. The binary mixtures are combinations of helium or neon and selected perfluorides. The ternary mixtures are combinations of helium, neon, or argon, a selected perfluoride, and a small amount of gas that exhibits enhanced ionization characteristics. These mixtures are shown to be the optimum choices for use in diffuse glow discharge closing switches by virtue if the combines physio-electric properties of the mixture components. 9 figs.

  18. Photochemical switching behavior of azofunctionalized polymer liquid crystal/SiO{sub 2} composite photonic crystal

    SciTech Connect (OSTI)

    Moritsugu, M.; Kim, S. N.; Ogata, T.; Nonaka, T.; Kurihara, S.; Kubo, S.; Segawa, H.; Sato, O.

    2006-10-09

    A photochemically tunable photonic crystal was prepared by infiltrating azopolymer liquid crystal in a SiO{sub 2} inverse opal structure. The SiO{sub 2} inverse opal film obtained reflected a light corresponding to the periodicity as well as the refractive indices of the inverse opal structure. Linearly polarized light irradiation shifted the reflection band to longer wavelength more than 15 nm. This is caused by the formation of anisotropic molecular orientation of the azopolymer. The switched state was stable in the dark, and the reversible switching of the reflection band can be achieved by the linearly and circularly polarized light irradiations.

  19. Electro-optic harmonic conversion to switch a laser beam out of a cavity

    DOE Patents [OSTI]

    Haas, Roger A.; Henesian, Mark A.

    1987-01-01

    The invention is a switch to permit a laser beam to escape a laser cavity through the use of an externally applied electric field across a harmonic conversion crystal. Amplification takes place in the laser cavity, and then the laser beam is switched out by the laser light being harmonically converted with dichroic or polarization sensitive elements present to alter the optical path of the harmonically converted laser light. Modulation of the laser beam can also be accomplished by varying the external electric field.

  20. Origin of magnetic switching field distribution in bit patterned media based on pre-patterned substrates

    SciTech Connect (OSTI)

    Pfau, B.; Guenther, C. M.; Eisebitt, S.; Guehrs, E.; Hauet, T.; Yang, H.; Vinh, L.; Xu, X.; Yaney, D.; Hellwig, O.; Rick, R.

    2011-08-08

    Using a combination of synchrotron radiation based magnetic imaging and high-resolution transmission electron microscopy we reveal systematic correlations between the magnetic switching field and the internal nanoscale structure of individual islands in bit patterned media fabricated by Co/Pd-multilayer deposition onto pre-patterned substrates. We find that misaligned grains at the island periphery are a common feature independent of the island switching field, while irregular island shapes and misaligned grains specifically extending into the center of an island are systematically correlated with a reduced island reversal field.

  1. Salazar, Chu Flip Switch on 65% Energy Savings | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Flip Switch on 65% Energy Savings Salazar, Chu Flip Switch on 65% Energy Savings January 30, 2012 - 5:58pm Addthis WASHINGTON, D.C. -Secretary of the Interior Ken Salazar, Secretary of Energy Steven Chu, the National Park Service and the Trust for the National Mall today hosted a lighting ceremony to celebrate the installation of energy-efficient LED lights on the Mall. The LED lights, donated by OSRAM SYLVANIA and installed pro bono by Pepco, the electric utility that serves Washington, D.C.,

  2. Electrode with transparent series resistance for uniform switching of optical modulation devices

    DOE Patents [OSTI]

    Tench, D. Morgan; Cunningham, Michael A.; Kobrin, Paul H.

    2008-01-08

    Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.

  3. Autoinhibition and Signaling by the Switch II Motif in the G-protein

    Office of Scientific and Technical Information (OSTI)

    Chaperone of a Radical B[subscript 12] Enzyme (Journal Article) | SciTech Connect Autoinhibition and Signaling by the Switch II Motif in the G-protein Chaperone of a Radical B[subscript 12] Enzyme Citation Details In-Document Search Title: Autoinhibition and Signaling by the Switch II Motif in the G-protein Chaperone of a Radical B[subscript 12] Enzyme Authors: Lofgren, Michael ; Koutmos, Markos ; Banerjee, Ruma [1] ; Michigan-Med) [2] + Show Author Affiliations (USUHS) ( Publication Date:

  4. Switching of the Spin-Density-Wave in CeCoIn5 probed by Thermal

    Office of Scientific and Technical Information (OSTI)

    Conductivity (Conference) | SciTech Connect Switching of the Spin-Density-Wave in CeCoIn5 probed by Thermal Conductivity Citation Details In-Document Search Title: Switching of the Spin-Density-Wave in CeCoIn5 probed by Thermal Conductivity Authors: Kim, Duk Young [1] ; Lin, Shizeng [1] ; Weickert, Franziska [2] ; Bauer, Eric Dietzgen [1] ; Ronning, Filip [1] ; Thompson, Joe David [1] ; Movshovich, Roman [1] + Show Author Affiliations Los Alamos National Laboratory MPA-CMMS: CONDENSED MATTER

  5. Switching of the Spin-Density-Wave in CeCoIn5 probed by Thermal

    Office of Scientific and Technical Information (OSTI)

    Conductivity (Conference) | SciTech Connect Switching of the Spin-Density-Wave in CeCoIn5 probed by Thermal Conductivity Citation Details In-Document Search Title: Switching of the Spin-Density-Wave in CeCoIn5 probed by Thermal Conductivity × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information

  6. In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching

    SciTech Connect (OSTI)

    Fujii, Takashi; Arita, Masashi; Takahashi, Yasuo; Fujiwara, Ichiro

    2011-05-23

    An in situ transmission electron microscopy (TEM) analysis of a solid electrolyte, Cu-GeS, during resistance switching is reported. Real-time observations of the filament formation and disappearance process were performed in the TEM instrument and the conductive-filament-formation model was confirmed experimentally. Narrow conductive filaments were formed corresponding to resistance switching from high- to low-resistance states. When the resistance changed to high-resistance state, the filament disappeared. It was also confirmed by use of selected area diffractometry and energy-dispersive x-ray spectroscopy that the conductive filament was made of nanocrystals composed mainly of Cu.

  7. New Switches for Utility-Scale Inverters: First In-Class Demonstration of a Completely New Type of SiC Bipolar Switch (15kV-20kV) for Utility-Scale Inverters

    SciTech Connect (OSTI)

    2011-12-31

    Solar ADEPT Project: The SiCLAB is developing a new power switch for utility-scale PV inverters that would improve the performance and significantly reduce the size, weight, and energy loss of PV systems. A power switch controls the electrical energy flowing through an inverter, which takes the electrical current from a PV solar panel and converts it into the type and amount of electricity that is compatible with the electric grid. SiCLAB is using silicon carbide (SiC) semiconductors in its new power switches, which are more efficient than the silicon semiconductors used to conduct electricity in most conventional power switches today. Switches with SiC semiconductors can operate at much higher temperatures, as well as higher voltage and power levels than silicon switches. SiC-based power switches are also smaller than those made with silicon alone, so they result in much smaller and lighter electrical devices. In addition to their use in utility-scale PV inverters, SiCLABs new power switches can also be used in wind turbines, railways, and other smart grid applications.

  8. Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gao, Xujiao; Mamaluy, Denis; Mickel, Patrick R.; Marinella, Matthew

    2015-09-08

    In this paper, we present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill outmore » a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.« less

  9. Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors

    SciTech Connect (OSTI)

    Gao, Xujiao; Mamaluy, Denis; Mickel, Patrick R.; Marinella, Matthew

    2015-09-08

    In this paper, we present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill out a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.

  10. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect (OSTI)

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.; THORNTON,R.L.; DONALDSON,R.D.

    1999-12-17

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itself depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approx}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs, unlike a switch with conventional contacts. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  11. An overview of the video switch management system for AVLIS experiments

    SciTech Connect (OSTI)

    Palasek, R.L.; Killian, M.J.; Zimmerman, M.D.

    1991-09-01

    The use of video images in the AVLIS systems is pervasive. Video images are taken, and displayed for functions such as pointing and centering, surveying (finding beam location), examining overlap of beams, and diagnostic analyses. The process laser light is generated, converted, tuned, amplified, split, and recombined in many stages; each stage relies on video images for operation, control and feedback. Without the ability to bring these many images together into one control room, operation and diagnostics of the AVLIS processes would be practically impossible. Of all auxiliary systems in the AVLIS process, video service is probably second only to the safety interlock system in importance. The video switch management computer system was needed to implement a virtual switch, where no commercial cross point switch was large enough or of practical cost. The system routes images to remote operator stations, integrates control of video image switching into the control of process devices, and reduces the cost and rack space needs of hardware controllers in work areas where there are numerous monitors. Access to remote images allow both operators and experimenters in one area to see images from other areas of the light chain. In some experiments, the process is physically distributed across the laboratory; problem resolution is facilitated if personnel at distant stations can see and talk about the same image simultaneously.

  12. Differentially-charged and sequentially-switched square-wave pulse forming network

    DOE Patents [OSTI]

    North, G.G.; Vogilin, G.E.

    1980-04-01

    Disclosed is a pulse forming network for delivering a high-energy square-wave pulse to a load, including a series of inductive-capacitive sections wherein the capacitors are differentially charged higher further from the load. Each charged capacitor is isolated from adjacent sections and the load by means of a normally open switch at the output of each section. The switch between the load and the closest section to the load is closed to begin discharge of the capacitor in that section into the load. During discharge of each capacitor, the voltage thereacross falls to a predetermined potential with respect to the potential across the capacitor in the next adjacent section further from the load. When this potential is reached, it is used to close the switch in the adjacent section further from the load and thereby apply the charge in that section to the load through the adjacent section toward the load. Each successive section further from the load is sequentially switched in this manner to continuously and evenly supply energy to the load over the period of the pulse, with the differentially charged capacitors providing higher potentials away from the load to compensate for the voltage drop across the resistance of each inductor. This arrangement is low in cost and yet provides a high-energy pulse in an acceptable square-wave form. 5 figs.

  13. Differentially-charged and sequentially-switched square-wave pulse forming network

    DOE Patents [OSTI]

    North, George G. [Stockton, CA; Vogilin, George E. [Livermore, CA

    1980-04-01

    A pulse forming network for delivering a high-energy square-wave pulse to a load, including a series of inductive-capacitive sections wherein the capacitors are differentially charged higher further from the load. Each charged capacitor is isolated from adjacent sections and the load by means of a normally open switch at the output of each section. The switch between the load and the closest section to the load is closed to begin discharge of the capacitor in that section into the load. During discharge of each capacitor, the voltage thereacross falls to a predetermined potential with respect to the potential across the capacitor in the next adjacent section further from the load. When this potential is reached, it is used to close the switch in the adjacent section further from the load and thereby apply the charge in that section to the load through the adjacent section toward the load. Each successive section further from the load is sequentially switched in this manner to continuously and evenly supply energy to the load over the period of the pulse, with the differentially charged capacitors providing higher potentials away from the load to compensate for the voltage drop across the resistance of each inductor. This arrangement is low in cost and yet provides a high-energy pulse in an acceptable square-wave form.

  14. Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

    SciTech Connect (OSTI)

    Hong, Seok Man; Kim, Hee-Dong; An, Ho-Myoung; Kim, Tae Geun

    2013-12-15

    Graphical abstract: - Highlights: The resistive switching characteristics of WN{sub x} thin films. Excellent CMOS compatibility WN{sub x} films as a resistive switching material. Resistive switching mechanism revealed trap-controlled space charge limited conduction. Good endurance and retention properties over 10{sup 5} cycles, and 10{sup 5} s, respectively - Abstract: We report the resistive switching (RS) characteristics of tungsten nitride (WN{sub x}) thin films with excellent complementary metal-oxide-semiconductor (CMOS) compatibility. A Ti/WN{sub x}/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately 2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WN{sub x} films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >10{sup 5} cycles and a long retention time of >10{sup 5} s.

  15. FERROELECTRIC SWITCH FOR A HIGH-POWER Ka-BAND ACTIVE PULSE COMPRESSOR

    SciTech Connect (OSTI)

    Hirshfield, Jay L.

    2013-12-18

    Results are presented for design of a high-power microwave switch for operation at 34.3 GHz, intended for use in an active RF pulse compressor. The active element in the switch is a ring of ferroelectric material, whose dielectric constant can be rapidly changed by application of a high-voltage pulse. As envisioned, two of these switches would be built into a pair of delay lines, as in SLED-II at SLAC, so as to allow 30-MW μs-length Ka-band pulses to be compressed in time by a factor-of-9 and multiplied in amplitude to generate 200 MW peak power pulses. Such high-power pulses could be used for testing and evaluation of high-gradient mm-wave accelerator structures, for example. Evaluation of the switch design was carried out with an X-band (11.43 GHz) prototype, built to incorporate all the features required for the Ka-band version.

  16. EECBG Success Story: Texas County "Flips The Switch" On New Energy-Efficient Complex

    Broader source: Energy.gov [DOE]

    More than 350 residents and students celebrated the grand opening of the first “green” building in Hidalgo County, Texas. The switch signified the county’s achievement in improving how public buildings are designed, built and operated, as well as its ongoing efforts to promote environmental sustainability. Learn more.

  17. Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces

    DOE Patents [OSTI]

    Sullivan, James S.; Hawkins, Steven A.

    2012-09-04

    An improved photoconductive switch having a SiC or other wide band gap substrate material with opposing contoured profile cavities which have a contoured profile selected from one of Rogowski, Bruce, Chang, Harrison, and Ernst profiles, and two electrodes with matching contoured-profile convex interface surfaces.

  18. Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path

    DOE Patents [OSTI]

    Nelson, Scott D.

    2016-05-10

    A photoconductive switch having a wide bandgap semiconductor material substrate between opposing electrodes, with one of the electrodes having an aperture or apertures at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate, so as to geometrically constrain the conductivity path to within the triple junction region.

  19. OLiMPS. OpenFlow Link-layer MultiPath Switching

    SciTech Connect (OSTI)

    Newman, Harvey B.; Barczyk, Artur; Bredel, Michael

    2014-11-17

    The OLiMPS project’s goal was the development of an OpenFlow controller application allowing load balancing over multiple switched paths across a complex network topology. The second goal was to integrate the controller with Dynamic Circuit Network systems such as ESnet’s OSCARS. Both goals were achieved successfully, as laid out in this report.

  20. Fiber Fabry-Perot tunable filter for high-speed optical packet switching

    SciTech Connect (OSTI)

    Taranenko, N.L.; Tenbrink, S.C.; Hsu, K.; Miller, C.M.

    1997-01-01

    Tunable optical filters are important building blocks for All-Optical systems and networks. Fast optical tuning in several microseconds is necessary to perform high-speed optical packet switching. Multi- Gigabit/sec packet-switching will provide flexibility and higher network throughput when large numbers of users communicate simultaneously. One approach to achieve fast wavelength tuning is to use high-speed piezoelectrically-driven Fiber Fabry-Perot tunable filters (FFP-TFs). The requirement for tuning in microseconds raises a whole new set of challenges, such as ringing, thermostability and mechanical inertia control. It was shown that correlation between the mechanical resonance and optical response of the filter is important for the filter`s speed and for mounting hardware and control circuitry optimization. These features together with the FFP-TF`s high capacitance (approximately 0.25-0.5 microfarad) are being folded into building a special controller to substantially improve the shape of the driving signal and the response of the filter. The resultant controller enables tuning the high-speed FFP-TF three-orders-of- magnitude faster than that possible with standard commercial FFP-TFS. The fastest switching time achieved is 2.5 microseconds. As the result, a new packet-switched media access control protocol is being designed to minimize the searching time. The filter scans only once through the entire optical region and then tunes to all the required channels one after another in a few microseconds. It can help update Rainbow-2 Broadcast-and-Select High-Speed Wavelength Division Multiplexing All-Optical network that currently has a circuit- switched protocol using standard FFP-TFS.

  1. S:\VM3\RX97\TBL_LIST.WPD

    U.S. Energy Information Administration (EIA) Indexed Site

    1997 Household Characteristics RSE Column Factor: Total Four Most Populated States RSE Row Factors New York California Texas Florida 0.4 1.1 1.2 1.4 1.4 Total .............................................................. 101.5 6.8 11.5 7.0 5.9 NF 1997 Household Income Category Less than $5,000 ......................................... 3.8 0.3 0.3 0.3 0.1 16.2 $5,000 to $9,999 ......................................... 9.6 0.9 1.1 0.6 0.7 14.2 $10,000 to $14,999

  2. S:\VM3\RX97\TBL_LIST.WPD

    U.S. Energy Information Administration (EIA) Indexed Site

    b. Household Characteristics by Four Most Populated States, Percent of U.S. Households, 1997 Household Characteristics RSE Column Factor: Total Four Most Populated States RSE Row Factors New York California Texas Florida 0.4 1.1 1.2 1.4 1.4 Total .............................................................. 100.0 100.0 100.0 100.0 100.0 0.0 1997 Household Income Category Less than $5,000 ......................................... 3.7 4.3 2.8 4.8 1.9 16.2 $5,000 to $9,999

  3. S:\VM3\RX97\TBL_LIST.WPD

    U.S. Energy Information Administration (EIA) Indexed Site

    Million U.S. Households, 1997 Housing Unit Characteristics RSE Column Factor: Total Four Most Populated States RSE Row Factors New York California Texas Florida 0.4 1.1 1.1 1.2 1.7 Total .............................................................. 101.5 6.8 11.5 7.0 5.9 NF Census Region and Division Northeast ..................................................... 19.7 6.8 -- -- -- NF New England ............................................. 5.3 Q -- -- -- NF Middle Atlantic

  4. S:\VM3\RX97\TBL_LIST.WPD

    U.S. Energy Information Administration (EIA) Indexed Site

    b. Housing Unit Characteristics by Four Most Populated States, Percent of U.S. Households, 1997 Housing Unit Characteristics RSE Column Factor: Total Four Most Populated States RSE Row Factors New York California Texas Florida 0.4 1.1 1.1 1.2 1.7 Total .............................................................. 100.0 100.0 100.0 100.0 100.0 0.0 Census Region and Division Northeast ..................................................... 19.4 100.0 -- -- -- NF New England

  5. S:\VM3\RX97\TBL_LIST.WPD

    U.S. Energy Information Administration (EIA) Indexed Site

    b. Space Heating by Four Most Populated States, Percent of U.S. Households, 1997 Space Heating Characteristics RSE Column Factor: Total Four Most Populated States RSE Row Factors New York California Texas Florida 0.5 1.2 0.9 1.3 1.5 Total .............................................................. 100.0 100.0 100.0 100.0 100.0 0.0 Main Heating Fuel and Equipment Natural Gas ................................................. 52.7 49.8 68.2 54.1 11.0 8.6 Central Warm-Air Furnace

  6. S:\VM3\RX97\TBL_LIST.WPD

    U.S. Energy Information Administration (EIA) Indexed Site

    Million U.S. Households; 13 pages, 52 kb) Contents Pages HC2-1a. Household Characteristics by Climate Zone, Million U.S. Households, 1997 2 HC2-2a. Household Characteristics by Year of Construction, Million U.S. Households, 1997 1 HC2-3a. Household Characteristics by Household Income, Million U.S. Households, 1997 1 HC2-4a. Household Characteristics by Type of Housing Unit, Million U.S. Households, 1997 1 HC2-5a. Household Characteristics by Type of Owner-Occupied Housing Unit, Million U.S.

  7. S:\VM3\RX97\TBL_LIST.WPD

    U.S. Energy Information Administration (EIA) Indexed Site

    Percent of U.S. Households; 13 pages, 54 kb) Contents Pages HC2-1b. Household Characteristics by Climate Zone, Percent of U.S. Households, 1997 2 HC2-2b. Household Characteristics by Year of Construction, Percent of U.S. Households, 1997 1 HC2-3b. Household Characteristics by Household Income, Percent of U.S. Households, 1997 1 HC2-4b. Household Characteristics by Type of Housing Unit, Percent of U.S. Households, 1997 1 HC2-5b. Household Characteristics by Type of Owner-Occupied Housing Unit,

  8. S:\VM3\RX97\TBL_LIST.WPD

    U.S. Energy Information Administration (EIA) Indexed Site

    V 1997 Housing Characteristics Tables Space Heating Tables (Million U.S. Households; 24 pages, 83 kb) Contents Pages HC3-1a. Space Heating by Climate Zone, Million U.S. Households, 1997 2 HC3-2a. Space Heating by Year of Construction, Million U.S. Households, 1997 2 HC3-3a. Space Heating by Household Income, Million U.S. Households, 1997 2 HC3-4a. Space Heating by Type of Housing Unit, Million U.S. Households, 1997 2 HC3-5a. Space Heating by Type of Owner-Occupied Housing Unit, Million U.S.

  9. S:\VM3\RX97\TBL_LIST.WPD

    U.S. Energy Information Administration (EIA) Indexed Site

    Space Heating Tables (Percent of U.S. Households; 24 pages, 85 kb) Contents Pages HC3-1b. Space Heating by Climate Zone, Percent of U.S. Households, 1997 2 HC3-2b. Space Heating by Year of Construction, Percent of U.S. Households, 1997 2 HC3-3b. Space Heating by Household Income, Percent of U.S. Households, 1997 2 HC3-4b. Space Heating by Type of Housing Unit, Percent of U.S. Households, 1997 2 HC3-5b. Space Heating by Type of Owner-Occupied Housing Unit, Percent of U.S. Households, 1997 2

  10. S:\\VM3\\RX97\\TBL_LIST.WPD

    U.S. Energy Information Administration (EIA) Indexed Site

    Space Heating Tables (Percent of U.S. Households; 24 pages, 85 kb) Contents Pages HC3-1b. Space Heating by Climate Zone, Percent of U.S. Households, 1997 2 HC3-2b. Space Heating by ...

  11. S:\\VM3\\RX97\\TBL_LIST.WPD

    U.S. Energy Information Administration (EIA) Indexed Site

    V 1997 Housing Characteristics Tables Space Heating Tables (Million U.S. Households; 24 pages, 83 kb) Contents Pages HC3-1a. Space Heating by Climate Zone, Million U.S. Households, ...

  12. S:\\VM3\\RX97\\TBL_LIST.WPD

    Annual Energy Outlook [U.S. Energy Information Administration (EIA)]

    53.5 3.4 7.8 3.8 0.7 8.6 Central Warm-Air Furnace ...... 38.4 1.8 ... 7.5 Q 0.8 0.3 0.5 24.4 Central Warm-Air Furnace ...... 10.7 Q 1.4 ...

  13. Fundamental science investigations to develop a 6-MV laser triggered gas switch for ZR: first annual report.

    SciTech Connect (OSTI)

    Warne, Larry Kevin; Van Den Avyle, James A.; Lehr, Jane Marie; Rose, David; Krompholz, Hermann G.; Vela, Russell; Jorgenson, Roy Eberhardt; Timoshkin, Igor (University of Strathclyde, Glasgow, Scotland); Woodworth, Joseph Ray; Prestwich, Kenneth Randel (Voss Scientific, Albuquerque, NM); Krile, John; Given, Martin (University of Strathclyde, Glasgow, Scotland); McKee, G. Randall; Rosenthal, Stephen Edgar; Struve, Kenneth William; Welch, Dale Robert (Voss Scientific, Albuquerque, NM); Benwell, Andrew L. (University of Missouri-Columbia, Columbia, Missouri); Kovaleski, Scott; LeChien, Keith, R.; Johnson, David (Titan Pulse Sciences Division); Fouracre, R.A. (University of Strathclyde, Glasgow, Scotland); Yeckel, Chris (University of Missouri-Columbia, Columbia, Missouri); Wakeland, Peter Eric; Miller, A. R. (Titan Pulse Sciences Division); Hodge, Keith Conquest (Ktech Corporation, Albuquerque, NM); Pasik, Michael Francis; Savage, Mark Edward; Maenchen, John Eric; Curry, Randy D.; Feltz, Greg; Bliss, David Emery; MacGregor, Scott (University of Strathclyde, Glasgow, Scotland); Corley, J. P. (Ktech Corporation, Albuquerque, NM); Anaya, Victor (Ktech Corporation, Albuquerque, NM); Wallace, Zachariah (Ktech Corporation, Albuquerque, NM); Thoma, Carsten (Voss Scientific, Albuquerque, NM); Neuber, Andreas. (Texas Tech University, Lubbock, TX)

    2007-03-01

    In October 2005, an intensive three-year Laser Triggered Gas Switch (LTGS) development program was initiated to investigate and solve observed performance and reliability issues with the LTGS for ZR. The approach taken has been one of mission-focused research: to revisit and reassess the design, to establish a fundamental understanding of LTGS operation and failure modes, and to test evolving operational hypotheses. This effort is aimed toward deploying an initial switch for ZR in 2007, on supporting rolling upgrades to ZR as the technology can be developed, and to prepare with scientific understanding for the even higher voltage switches anticipated needed for future high-yield accelerators. The ZR LTGS was identified as a potential area of concern quite early, but since initial assessments performed on a simplified Switch Test Bed (STB) at 5 MV showed 300-shot lifetimes on multiple switch builds, this component was judged acceptable. When the Z{sub 20} engineering module was brought online in October 2003 frequent flashovers of the plastic switch envelope were observed at the increased stresses required to compensate for the programmatically increased ZR load inductance. As of October 2006, there have been 1423 Z{sub 20} shots assessing a variety of LTGS designs. Numerous incremental and fundamental switch design modifications have been investigated. As we continue to investigate the LTGS, the basic science of plastic surface tracking, laser triggering, cascade breakdown, and optics degradation remain high-priority mission-focused research topics. Significant progress has been made and, while the switch does not yet achieve design requirements, we are on the path to develop successively better switches for rolling upgrade improvements to ZR. This report summarizes the work performed in FY 2006 by the large team. A high-level summary is followed by detailed individual topical reports.

  14. Resistive switching and threshold switching behaviors in La{sub 0.1}Bi{sub 0.9}Fe{sub 1-x}Co{sub x}O{sub 3} ceramics

    SciTech Connect (OSTI)

    Wang, S. Y.; Qiu, Xue; Feng, Yu; Hou, X. G.; Yu, D. S.; Li, D. J.; Liu, W. F.; Gao, J.

    2012-08-01

    The effects of cobalt doping on the electrical conductivity of La{sub 0.1}Bi{sub 0.9}Fe{sub 1-x}Co{sub x}O{sub 3} (LBFCO, x = 0, 0.01, 0.03) ceramics were investigated. It is found that the leakage current increases with cobalt dopant concentration in LBFCO. On the application of bias voltage LBFCO ceramics with cobalt doping exhibits resistive switching effects at room temperature and threshold switching effects at elevated temperatures (50 Degree-Sign C and 80 Degree-Sign C). X-ray photoelectron spectroscopy of LBFCO ceramics show that cobalt dopant is bivalent as an acceptor, which induces an enhancement of oxygen vacancy concentration in LBFCO ceramics. Possible mechanisms for both resistive switching and threshold switching effects are discussed on the basis of the interplay of bound ferroelectric charges and mobile charged defects.

  15. Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

    SciTech Connect (OSTI)

    Khan, Asif Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

    2014-06-30

    A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

  16. A spin light emitting diode incorporating ability of electrical helicity switching

    SciTech Connect (OSTI)

    Nishizawa, N., E-mail: nishizawa@isl.titech.ac.jp; Nishibayashi, K.; Munekata, H. [Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-J3-15 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2014-03-17

    Fabrication and optical characteristics of a spin light-emitting-diode (spin-LED) having dual spin-injection electrodes with anti-parallel magnetization configuration are reported. Alternating a current between the two electrodes using a computer-driven current source has led us to the observation of helicity switching of circular polarization at the frequency of 1 kHz. Neither external magnetic fields nor optical delay modulators were used. Sending dc-currents to both electrodes with appropriate ratio has resulted in continuous variation of circular polarization between the two opposite helicity, including the null polarization. These results suggest that the tested spin-LED has the feasibility of a monolithic light source whose circular polarization can be switched or continuously tuned all electrically.

  17. Resistance switching in epitaxial SrCoO{sub x} thin films

    SciTech Connect (OSTI)

    Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong

    2014-08-11

    We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO{sub 3} (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO{sub 2.5}) and conducting perovskite (SrCoO{sub 3??}) depending on the oxygen content. The currentvoltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO{sub x} thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO{sub 2.5}.

  18. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches

    SciTech Connect (OSTI)

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li

    2014-09-15

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ?40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  19. Methods and apparatus for optical switching using electrically movable optical fibers

    DOE Patents [OSTI]

    Peterson, Kenneth A.

    2007-03-13

    Methods and apparatuses for electrically controlled optical switches are presented. An electrically controlled optical switch includes a fixture formed using a laminated dielectric material, a first optical fiber having a fixed segment supported by the fixture and a movable segment extending into a cavity, a second optical fiber having a fixed segment supported by the fixture and an extended segment where an optical interconnect may be established between the first optical fiber and the second optical fiber, and a first electrical actuator functionally coupled to the fixture and the first fiber which alters a position of the moveable segment, based upon a control signal, for changing a state of the optical interconnect between one of two states.

  20. Diode-laser-side-pumped Nd:YAG Q-switch TEM{sub 00} laser

    SciTech Connect (OSTI)

    Wang Weimin; Yang Chenglong; Tang Chun; Cheng Jinyan; Yang Senlin; Liao Yinyan

    1996-12-31

    The diode laser side pumped E-O Q-switch Nd:YAG laser was described that produced energy 0.36-mJ/pulse, 7-ns pulse width, pulse repetition rates 50-Hz, TEM{sub 00} mode. The laser has a zigzag slab geometry, side pumped with a quasi-CW 15W diode bar. The authors used a 1.1% Nd:YAG Brewster-cut seven-bounce thin trapezoidal slab that was 1.2mm thick. Using a cylindrical lens (f = 1.6mm), it made the diode laser couple in the slab. The laser resonator was a plane-concave cavity, radius of mirror curvature was 3m. The cavity length was about 20cm. The plane output mirror transitivity was T = 0.1. They decided to the beam quality M{sup 2} = 1.1. Q-switch laser slope efficiency was 19%.

  1. Switching coordination of distributed dc-dc converters for highly efficient photovoltaic power plants

    DOE Patents [OSTI]

    Agamy, Mohammed; Elasser, Ahmed; Sabate, Juan Antonio; Galbraith, Anthony William; Harfman Todorovic, Maja

    2014-09-09

    A distributed photovoltaic (PV) power plant includes a plurality of distributed dc-dc converters. The dc-dc converters are configured to switch in coordination with one another such that at least one dc-dc converter transfers power to a common dc-bus based upon the total system power available from one or more corresponding strings of PV modules. Due to the coordinated switching of the dc-dc converters, each dc-dc converter transferring power to the common dc-bus continues to operate within its optimal efficiency range as well as to optimize the maximum power point tracking in order to increase the energy yield of the PV power plant.

  2. Electron-Beam Switches For A High Peak Power Sled-II Pulse Compressor

    SciTech Connect (OSTI)

    Hirshfield, Jay, L.

    2015-12-02

    Omega-P demonstrated triggered electron-beam switches on the L=2 m dual-delay-line X-band pulse compressor at Naval Research Laboratory (NRL). In those experiments, with input pulses of up to 9 MW from the Omega-P/NRL X-band magnicon, output pulses having peak powers of 140-165 MW and durations of 16-20 ns were produced, with record peak power gains M of 18-20. Switch designs are described based on the successful results that should be suitable for use with the existing SLAC SLED-II delay line system, to demonstrate C=9, M=7, and n>>78%, yielding 173ns compressed pulses with peak powers up to 350MW with input of a single 50-MW.

  3. Robust random number generation using steady-state emission of gain-switched laser diodes

    SciTech Connect (OSTI)

    Yuan, Z. L. Lucamarini, M.; Dynes, J. F.; Frhlich, B.; Plews, A.; Shields, A. J.

    2014-06-30

    We demonstrate robust, high-speed random number generation using interference of the steady-state emission of guaranteed random phases, obtained through gain-switching a semiconductor laser diode. Steady-state emission tolerates large temporal pulse misalignments and therefore significantly improves the interference quality. Using an 8-bit digitizer followed by a finite-impulse-response unbiasing algorithm, we achieve random number generation rates of 8 and 20?Gb/s, for laser repetition rates of 1 and 2.5?GHz, respectively, with a 20% tolerance in the interferometer differential delay. We also report a generation rate of 80?Gb/s using partially phase-correlated short pulses. In relation to the field of quantum key distribution, our results confirm the gain-switched laser diode as a suitable light source, capable of providing phase-randomized coherent pulses at a clock rate of up to 2.5?GHz.

  4. Humidity effects on tip-induced polarization switching in lithium niobate

    SciTech Connect (OSTI)

    Ievlev, A. V.; Morozovska, A. N.; Shur, V. Ya.; Kalinin, S. V.

    2014-03-03

    In the last several decades, ferroelectrics have attracted much attention as perspective materials for nonlinear optics and data storage devices. Scanning probe microscopy (SPM) has emerged as a powerful tool both for studies of domain structures with nanoscale spatial resolution and for writing the isolated nanodomains by local application of the electric field. Quantitative analysis of the observed behavior requires understanding the role of environmental factors on imaging and switching process. Here, we study the influence of the relative humidity in the SPM chamber on tip-induced polarization switching. The observed effects are attributed to existence of a water meniscus between the tip and the sample surface in humid atmosphere. These results are important for a deeper understanding of complex investigations of ferroelectric materials and their applications and suggest the necessity for fundamental studies of electrocapillary phenomena at the tip-surface junction and their interplay with bias-induced materials responses.

  5. Humidity effects on tip-induced polarization switching in lithium niobate

    SciTech Connect (OSTI)

    Ievlev, Anton; Morozovska, A. N.; Shur, Vladimir Ya.; Kalinin, Sergei V

    2014-01-01

    In the last several decades, ferroelectrics have attracted much attention as perspective materials for nonlinear optics and data storage devices. Scanning probe microscopy (SPM) has emerged as a powerful tool both for studies of domain structures with nanoscale spatial resolution and for writing the isolated nanodomains by local application of the electric field. Quantitative analysis of the observed behavior requires understanding the role of environmental factors on imaging and switching process. Here we study the influence of the relative humidity in the SPM chamber on tip-induced polarization switching. The observed effects are attributed to existence of a water meniscus between the tip and the sample surface in humid atmosphere. These results are important for a deeper understanding of complex investigations of ferroelectric materials and their applications, and suggest the necessity for fundamental studies of electrocapillary phenomena at the tip-surface junction and their interplay with bias-induced materials responses.

  6. Resistive switching phenomena in TiO{sub x} nanoparticle layers for memory applications

    SciTech Connect (OSTI)

    Goren, Emanuelle; Tsur, Yoed; Ungureanu, Mariana; Zazpe, Raul; Rozenberg, Marcelo; Hueso, Luis E.; Casanova, Flix; Stoliar, Pablo

    2014-10-06

    Electrical characteristics of a Co/ TiO{sub x}/Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO{sub 2} layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiO{sub x} nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.

  7. Identifying Opportunities and Impacts of Fuel Switching in the Industrial Sector

    SciTech Connect (OSTI)

    Jain, Ramesh C.; Jamison, Keith; Thomas, Daniel E.

    2006-08-01

    The underlying purpose of this white paper is to examine fuel switching opportunities in the U.S. industrial sector and make strategic recommendationsleading to application of the best available technologies and development of new technologiesthat will introduce fuel use flexibility as an economically feasible option for plant operators, as a means to condition local fuel demands and a hedge against the local rises in fuel prices.

  8. Examination of the technical potential of near-infrared switching thermochromic windows for commercial building applications

    SciTech Connect (OSTI)

    Hoffmann, Sabine; Lee, Eleanor S.; Clavero, Cesar

    2013-12-01

    Current thermochromic windows modulate solar transmission primarily within the visible range, resulting in reduced space-conditioning energy use but also reduced daylight, thereby increasing lighting energy use compared to conventional static, near-infrared selective, low-emittance windows. To better understand the energy savings potential of improved thermochromic devices, a hypothetical near-infrared switching thermochromic glazing was defined based on guidelines provided by the material science community. EnergyPlus simulations were conducted on a prototypical large office building and a detailed analysis was performed showing the progression from switching characteristics to net window heat flow and perimeter zone loads and then to perimeter zone heating, ventilation, and air-conditioning (HVAC) and lighting energy use for a mixed hot/cold climate and a hot, humid climate in the US. When a relatively high daylight transmission is maintained when switched (Tsol = 0.10-0.50, Tvis = 0.30-0.60) and if coupled with a low-e inboard glazing layer (e = 0.04), the hypothetical thermochromic window with a low critical switching temperature range (14-20°C) achieved reductions in total site annual energy use of 14.0-21.1 kWh/m2-floor-yr or 12-14%2 for moderate- to large-area windows (WWR≥0.30) in Chicago and 9.8-18.6 kWh/m2-floor-yr or 10-17%3 for WWR≥0.45 in Houston compared to an unshaded spectrally-selective, low-e window (window E1) in south-, east-, and west-facing perimeter zones. If this hypothetical thermochromic window can be offered at costs that are competitive to conventional low-e windows and meet aesthetic requirements defined by the building industry and end users, then the technology is likely to be a viable energy-efficiency option for internal load dominated commercial buildings.

  9. Get Current: Switch on Clean Energy Coloring Book | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Coloring Book Get Current: Switch on Clean Energy Coloring Book Below is information about the student activity/lesson plan from your search. Grades K-4 Subject Energy Basics Summary Kids can be part of the Clean Energy Generation: This coloring book teaches them about renewable energies such as wind, water and solar, as well as good habits in energy efficiency to practice at home. (Available in both English and Spanish.) Curriculum Science, Language Arts Plan Time Varies by activity Materials

  10. A switched capacitor array based system for high-speed calorimetry

    SciTech Connect (OSTI)

    Levi, M.; Bebek, C.; Ely, R.; Jared, R.; Kipnis, I.; Kirsten, F.; Kleinfelder, S.; Merrick, T.; Milgrome, O.

    1991-12-01

    A sixteen channel analog transient recorder with 256 cells per channel has been fabricated as an integrated circuit. The circuit uses switched capacitor array technology to achieve simultaneous read/write capability and twelve bit dynamic range. Combined with highly parallel analog-to-digital converter and readout control circuitry being developed this system should satisfy the demanding electronics requirements for calorimeter detectors at the SSC. The system design and test results are presented.

  11. Utility-Interconnected Photovoltaic Systems: Evaluating the Rationale for the Utility-Accessible External Disconnect Switch

    SciTech Connect (OSTI)

    Coddington, M.; Margolis, R.M.; Aabakken, J.

    2008-01-01

    The utility-accessible alternating current (AC) external disconnect switch (EDS) for distributed generators, including photovoltaic (PV) systems, is a hardware feature that allows a utility?s employees to manually disconnect a customer-owned generator from the electricity grid. This paper examines the utility-accessible EDS debate in the context of utility-interactive PV systems for residential and small commercial installations. It also evaluates the rationale for EDS requirements.

  12. Fundamental Frequency Switching Control of Seven-Level Hybrid Cascaded H-bridge Multilevel Inverter

    SciTech Connect (OSTI)

    Du, Zhong; Chiasson, John N; Ozpineci, Burak; Tolbert, Leon M

    2009-01-01

    This paper presents a cascaded H-bridge multilevel inverter that can be implemented using only a single dc power source and capacitors. Standard cascaded multilevel inverters require n dc sources for 2n + 1 levels. Without requiring transformers, the scheme proposed here allows the use of a single dc power source (e.g., a battery or a fuel cell stack) with the remaining n-1 dc sources being capacitors, which is referred to as hybrid cascaded H-bridge multilevel inverter (HCMLI) in this paper. It is shown that the inverter can simultaneously maintain the dc voltage level of the capacitors and choose a fundamental frequency switching pattern to produce a nearly sinusoidal output. HCMLI using only a single dc source for each phase is promising for high-power motor drive applications as it significantly decreases the number of required dc power supplies, provides high-quality output power due to its high number of output levels, and results in high conversion efficiency and low thermal stress as it uses a fundamental frequency switching scheme. This paper mainly discusses control of seven-level HCMLI with fundamental frequency switching control and how its modulation index range can be extended using triplen harmonic compensation.

  13. Magnetoelectric switching of perpendicular exchange bias in Pt/Co/?-Cr{sub 2}O{sub 3}/Pt stacked films

    SciTech Connect (OSTI)

    Toyoki, Kentaro; Shiratsuchi, Yu Kobane, Atsushi; Nakatani, Ryoichi; Mitsumata, Chiharu; Kotani, Yoshinori; Nakamura, Tetsuya

    2015-04-20

    We report the realization of magnetoelectric switching of the perpendicular exchange bias in Pt/Co/?-Cr{sub 2}O{sub 3}/Pt stacked films. The perpendicular exchange bias was switched isothermally by the simultaneous application of magnetic and electric fields. The threshold electric field required to switch the perpendicular exchange bias was found to be inversely proportional to the magnetic field, which confirmed the magnetoelectric mechanism of the process. The observed temperature dependence of the threshold electric field suggested that the energy barrier of the antiferromagnetic spin reversal was significantly lower than that assuming the coherent rotation. Pulse voltage measurements indicated that the antiferromagnetic domain propagation dominates the switching process. These results suggest an analogy of the electric-field-induced magnetization with a simple ferromagnet.

  14. Effect of the top electrode materials on the resistive switching characteristics of TiO{sub 2} thin film

    SciTech Connect (OSTI)

    Oh, Sang Chul; Jung, Ho Yong; Lee, Heon

    2011-06-15

    Various metals, such as Pt, stainless steel (SUS), Al, Ni, and Ti, were used as a top electrode (TE) to evaluate the dependency of the resistive switching characteristics on the TE of the metal/TiO{sub 2}/Pt structure. The variation of the chemical composition of TiO{sub 2} in the metal/TiO{sub 2}/Pt structure before and after switching was examined to identify the factors affecting the resistive switching characteristics of the samples with various TE materials. In the case of TE/TiO{sub 2}/Pt structures showing unstable resistive switching behavior, e.g., those with the Al, Ni, and Ti TEs, secondary ion mass spectrometry revealed an increase in the oxygen concentration at the interface area between the TE metal and TiO{sub 2}. This suggests that the oxidation reaction at the interface between the TE metal and TiO{sub 2} might cause the TE/TiO{sub 2}/Pt structure to exhibit unstable resistive switching characteristics. According to these results, the oxidation reaction at the interface between the metal TE and TiO{sub 2} thin film is a primary factor affecting the resistive switching characteristics of TiO{sub 2}-based Resistive Random Access Memory devices.

  15. Growth and self-assembly of BaTiO{sub 3} nanocubes for resistive switching memory cells

    SciTech Connect (OSTI)

    Chu, Dewei, E-mail: D.Chu@unsw.edu.au [School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Lin, Xi; Younis, Adnan [School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Li, Chang Ming [Chongqing Key Lab for Advanced Materials and Clean Energies of Techonologies Dean, Institute for Clean Energy and Advanced Materials, Southwest University, Chongqing (China); Dang, Feng [Research Center for Materials Back Casting Technology (MBT Center), Nagoya University, Nagoya 464-8603 (Japan); Li, Sean [School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia)

    2014-06-01

    In this work, the self-assembled BaTiO{sub 3} nanocubes based resistive switching memory capacitors are fabricated with hydrothermal and drop-coating approaches. The device exhibits excellent bipolar resistance switching characteristics with ON/OFF ratio of 5870, better reliability and stability over various polycrystalline BaTiO{sub 3} nanostructures. It is believed that the inter cube junctions is responsible for such a switching behaviour and it can be described by the filament model. The effect of film thickness on switching ratio (ON/OFF) was also investigated in details. - Graphical abstract: This work describes a novel resistive switching memory cell based on self-assembled BaTiO{sub 3} nanocubes. - Highlights: BaTiO{sub 3} nanocubes were prepared by one step facile hydrothermal method. Self-assembled BaTiO{sub 3} nanocubes thin films were obtained by drop-coating approach. The BaTiO{sub 3} nanocubes show excellent resistive switching properties for memory applications.

  16. Automated setup for magnetic hysteresis characterization based on a voltage controlled current source with 500 kHz full power bandwidth and 10 A peak-to-peak current

    SciTech Connect (OSTI)

    Calabrese, G.; Capineri, L.; Granato, M.; Frattini, G.

    2015-04-15

    This paper describes the design of a system for the characterization of magnetic hysteresis behavior in soft ferrite magnetic cores. The proposed setup can test magnetic materials exciting them with controlled arbitrary magnetic field waveforms, including the capability of providing a DC bias, in a frequency bandwidth up to 500 kHz, with voltages up to 32 V peak-to-peak, and currents up to 10 A peak-to-peak. In order to have an accurate control of the magnetic field waveform, the system is based on a voltage controlled current source. The electronic design is described focusing on closed loop feedback stabilization and passive components choice. The system has real-time hysteretic loop acquisition and visualization. The comparisons between measured hysteresis loops of sample magnetic materials and datasheet available ones are shown. Results showing frequency and thermal behavior of the hysteresis of a test sample prove the system capabilities. Moreover, the B-H loops obtained with a multiple waveforms excitation signal, including DC bias, are reported. The proposal is a low-cost and replicable solution for hysteresis characterization of magnetic materials used in power electronics.

  17. Spire Semiconductor formerly Bandwidth Semiconductor LLC | Open...

    Open Energy Info (EERE)

    Zip: 3051 Product: Spire-owned US-based manufacturer of gallium-arsenide (GaAs) cells; offers design and manufacturing capabilities of concentrator cells. References: Spire...

  18. Ultra-narrow bandwidth voice coding

    DOE Patents [OSTI]

    Holzrichter, John F.; Ng, Lawrence C.

    2007-01-09

    A system of removing excess information from a human speech signal and coding the remaining signal information, transmitting the coded signal, and reconstructing the coded signal. The system uses one or more EM wave sensors and one or more acoustic microphones to determine at least one characteristic of the human speech signal.

  19. The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems

    SciTech Connect (OSTI)

    Guo, Jiquan; /SLAC

    2009-03-20

    In the past decades, there has been increasing interest in pulsed high power RF sources for building high-gradient high-energy particle accelerators. Passive RF pulse compression systems have been used in many applications to match the available RF sources to the loads requiring higher RF power but a shorter pulse. Theoretically, an active RF pulse compression system has the advantage of higher efficiency and compactness over the passive system. However, the key component for such a system an element capable of switching hundreds of megawatts of RF power in a short time compared to the compressed pulse width is still an open problem. In this dissertation, we present a switch module composed of an active window based on the bulk effects in semiconductor, a circular waveguide three-port network and a movable short plane, with the capability to adjust the S-parameters before and after switching. The RF properties of the switch module were analyzed. We give the scaling laws of the multiple-element switch systems, which allow the expansion of the system to a higher power level. We present a novel overmoded design for the circular waveguide three-port network and the associated circular-to-rectangular mode-converter. We also detail the design and synthesis process of this novel mode-converter. We demonstrate an electrically controlled ultra-fast high power X-band RF active window built with PIN diodes on high resistivity silicon. The window is capable of handling multi-megawatt RF power and can switch in 2-300ns with a 1000A current driver. A low power active pulse compression experiment was carried out with the switch module and a 375ns resonant delay line, obtaining 8 times compression gain with a compression ratio of 20.

  20. Electron beam magnetic switch for a plurality of free electron lasers

    DOE Patents [OSTI]

    Schlitt, Leland G. (Livermore, CA)

    1984-01-01

    Apparatus for forming and utilizing a sequence of electron beam segments, each of the same temporal length (substantially 15 nsec), with consecutive beams being separated by a constant time interval of the order of 3 nsec. The beam sequence is used for simultaneous inputs to a plurality of wiggler magnet systems that also accept the laser beams to be amplified by interaction with the co-propagating electron beams. The electron beams are arranged substantially in a circle to allow proper distribution of and simultaneous switching out of the beam segments to their respective wiggler magnets.

  1. Development of a High-Speed Static Switch for Distributed Energy and Microgrid Applications

    SciTech Connect (OSTI)

    Kroposki, B.; Pink, C.; Lynch, J.; John, V.; Meor Daniel, S.; Benedict, E.; Vihinen, I.

    2007-01-01

    Distributed energy resources can provide power to local loads in the electric distribution system and benefits such as improved reliability. Microgrids are intentional islands formed at a facility or in an electrical distribution system that contains at least one distributed resource and associated loads. Microgrids that operate both electrical generation and loads in a coordinated manner can offer additional benefits to the customer and local utility. The loads and energy sources can be disconnected from and reconnected to the area or local utility with minimal disruption to the local loads, thereby improving reliability. This paper details the development and testing of a highspeed static switch for distributed energy and microgrid applications.

  2. Method of pedestal and common-mode noise correction for switched-capacitor analog memories

    DOE Patents [OSTI]

    Britton, Charles L.

    1996-01-01

    A method and apparatus for correcting common-mode noise and pedestal noise in a multichannel array of switched-capacitor analog memories wherein each analog memory is connected to an associated analog-to-digital converter. The apparatus comprises a single differential element in two different embodiments. In a first embodiment, the differential element is a reference analog memory connected to a buffer. In the second embodiment, the differential element is a reference analog memory connected to a reference analog-to-digital connected to an array of digital summing circuits.

  3. Method of pedestal and common-mode noise correction for switched-capacitor analog memories

    DOE Patents [OSTI]

    Britton, C.L.

    1996-12-31

    A method and apparatus are disclosed for correcting common-mode noise and pedestal noise in a multichannel array of switched-capacitor analog memories wherein each analog memory is connected to an associated analog-to-digital converter. The apparatus comprises a single differential element in two different embodiments. In a first embodiment, the differential element is a reference analog memory connected to a buffer. In the second embodiment, the differential element is a reference analog memory connected to a reference analog-to-digital connected to an array of digital summing circuits. 4 figs.

  4. Method of pedestal and common-mode noise correction for switched-capacitor analog memories

    DOE Patents [OSTI]

    Britton, C.L.

    1997-09-23

    A method and apparatus are disclosed for correcting common-mode noise and pedestal noise in a multichannel array of switched-capacitor analog memories wherein each analog memory is connected to an associated analog-to-digital converter. The apparatus comprises a single differential element in two different embodiments. In a first embodiment, the differential element is a reference analog memory connected to a buffer. In the second embodiment, the differential dement is a reference analog memory connected to a reference analog-to-digital connected to an array of digital summing circuits. 4 figs.

  5. Method of pedestal and common-mode noise correction for switched-capacitor analog memories

    DOE Patents [OSTI]

    Britton, Charles L.

    1997-01-01

    A method and apparatus for correcting common-mode noise and pedestal noise in a multichannel array of switched-capacitor analog memories wherein each analog memory is connected to an associated analog-to-digital converter. The apparatus comprises a single differential element in two different embodiments. In a first embodiment, the differential element is a reference analog memory connected to a buffer. In the second embodiment, the differential dement is a reference analog memory connected to a reference analog-to-digital connected to an array of digital summing circuits.

  6. Electron tunnelling through single azurin molecules can be on/off switched by voltage pulses

    SciTech Connect (OSTI)

    Baldacchini, Chiara; Kumar, Vivek; Bizzarri, Anna Rita; Cannistraro, Salvatore

    2015-05-04

    Redox metalloproteins are emerging as promising candidates for future bio-optoelectronic and nano-biomemory devices, and the control of their electron transfer properties through external signals is still a crucial task. Here, we show that a reversible on/off switching of the electron current tunnelling through a single protein can be achieved in azurin protein molecules adsorbed on gold surfaces, by applying appropriate voltage pulses through a scanning tunnelling microscope tip. The observed changes in the hybrid system tunnelling properties are discussed in terms of long-sustained charging of the protein milieu.

  7. Hardware enabled performance counters with support for operating system context switching

    DOE Patents [OSTI]

    Salapura, Valentina; Wisniewski, Robert W.

    2015-06-30

    A device for supporting hardware enabled performance counters with support for context switching include a plurality of performance counters operable to collect information associated with one or more computer system related activities, a first register operable to store a memory address, a second register operable to store a mode indication, and a state machine operable to read the second register and cause the plurality of performance counters to copy the information to memory area indicated by the memory address based on the mode indication.

  8. 'Exotic' material is like a switch when super thin > Archived News Stories

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    > The Energy Materials Center at Cornell 'Exotic' material is like a switch when super thin April 17th, 2014 › By Anne Ju Hanfei Wei An artist's rendering of the thickness-driven, metal-insulator transition in sub-nanometer films of a lanthanum nickelate. Nickel atoms are shown in gold, oxygen atoms in white, and lanthanum atoms in red, and metallicity is achieved in going from two to three atomic layers. Ever-shrinking electronic devices could get down to atomic dimensions with the

  9. Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect

    SciTech Connect (OSTI)

    Kanai, S.; Nakatani, Y.; Yamanouchi, M.; Ikeda, S.; Sato, H.; Matsukura, F.; Ohno, H.

    2014-05-26

    We propose and demonstrate a scheme for magnetization switching in magnetic tunnel junctions, in which two successive voltage pulses are applied to utilize both spin-transfer torque and electric field effect. Under this switching scheme, a CoFeB/MgO magnetic tunnel junction with perpendicular magnetic easy axis is shown to switch faster than by spin-transfer torque alone and more reliably than that by electric fields alone.

  10. Helium in chirped laser fields as a time-asymmetric atomic switch

    SciTech Connect (OSTI)

    Kaprlov-?nsk, Petra Ruth; Moiseyev, Nimrod

    2014-07-07

    Tuning the laser parameters exceptional points in the spectrum of the dressed laser helium atom are obtained. The weak linearly polarized laser couples the ground state and the doubly excited P-states of helium. We show here that for specific chirped laser pulses that encircle an exceptional point one can get the time-asymmetric phenomenon, where for a negative chirped laser pulse the ground state is transformed into the doubly excited auto-ionization state, while for a positive chirped laser pulse the resonance state is not populated and the neutral helium atoms remains in the ground state as the laser pulse is turned off. Moreover, we show that the results are very sensitive to the closed contour we choose. This time-asymmetric state exchange phenomenon can be considered as a time-asymmetric atomic switch. The optimal time-asymmetric switch is obtained when the closed loop that encircles the exceptional point is large, while for the smallest loops, the time-asymmetric phenomenon does not take place. A systematic way for studying the effect of the chosen closed contour that encircles the exceptional point on the time-asymmetric phenomenon is proposed.

  11. Insight into the molecular switch mechanism of human Rab5a from molecular dynamics simulations

    SciTech Connect (OSTI)

    Wang, Jing-Fang; Shanghai Center for Bioinformation Technology, 100 Qinzhou Road, Shanghai 200235; Gordon Life Science Institute, 13784 Torrey Del Mar Drive, San Diego, CA 92130 ; Chou, Kuo-Chen

    2009-12-18

    Rab5a is currently a most interesting target because it is responsible for regulating the early endosome fusion in endocytosis and possibly the budding process. We utilized longtime-scale molecular dynamics simulations to investigate the internal motion of the wild-type Rab5a and its A30P mutant. It was observed that, after binding with GTP, the global flexibility of the two proteins is increasing, while the local flexibility in their sensitive sites (P-loop, switch I and II regions) is decreasing. Also, the mutation of Ala30 to Pro30 can cause notable flexibility variations in the sensitive sites. However, this kind of variations is dramatically reduced after binding with GTP. Such a remarkable feature is mainly caused by the water network rearrangements in the sensitive sites. These findings might be of use for revealing the profound mechanism of the displacements of Rab5a switch regions, as well as the mechanism of the GDP dissociation and GTP association.

  12. Spectrographic temperature measurement of a high power breakdown arc in a high pressure gas switch

    SciTech Connect (OSTI)

    Yeckel, Christopher; Curry, Randy

    2011-09-15

    A procedure for obtaining an approximate temperature value of conducting plasma generated during self-break closure of a RIMFIRE gas switch is described. The plasma is in the form of a breakdown arc which conducts approximately 12 kJ of energy in 1 {mu}s. A spectrographic analysis of the trigger-section of the 6-MV RIMFIRE laser triggered gas switch used in Sandia National Laboratory's ''Z-Machine'' has been made. It is assumed that the breakdown plasma has sufficiently approached local thermodynamic equilibrium allowing a black-body temperature model to be applied. This model allows the plasma temperature and radiated power to be approximated. The gas dielectric used in these tests was pressurized SF{sub 6}. The electrode gap is set at 4.59 cm for each test. The electrode material is stainless steel and insulator material is poly(methyl methacrylate). A spectrum range from 220 to 550 nanometers has been observed and calibrated using two spectral irradiance lamps and three spectrograph gratings. The approximate plasma temperature is reported.

  13. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    SciTech Connect (OSTI)

    Schwarze, G.E.; Frasca, A.J.

    1994-09-01

    The effects of neutrons and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10{sup 13} n/cm {sup 2} and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are given in this paper. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

  14. Open-loop correction for an eddy current dominated beam-switching magnet

    SciTech Connect (OSTI)

    Koseki, K. Nakayama, H.; Tawada, M.

    2014-04-15

    A beam-switching magnet and the pulsed power supply it requires have been developed for the Japan Proton Accelerator Research Complex. To switch bunched proton beams, the dipole magnetic field must reach its maximum value within 40 ms. In addition, the field flatness should be less than 5 × 10{sup −4} to guide each bunched beam to the designed orbit. From a magnetic field measurement by using a long search coil, it was found that an eddy current in the thick endplates and laminated core disturbs the rise of the magnetic field. The eddy current also deteriorates the field flatness over the required flat-top period. The measured field flatness was 5 × 10{sup −3}. By using a double-exponential equation to approximate the measured magnetic field, a compensation pattern for the eddy current was calculated. The integrated magnetic field was measured while using the newly developed open-loop compensation system. A field flatness of less than 5 × 10{sup −4}, which is an acceptable value, was achieved.

  15. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOE Patents [OSTI]

    Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2015-09-08

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  16. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOE Patents [OSTI]

    Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2013-11-26

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  17. ION MANIPULATIONS IN STRUCTURES FOR LOSSLESS ION MANIPULATIONS (SLIM): COMPUTATIONAL EVALUATION OF A 90o TURN AND A SWITCH

    SciTech Connect (OSTI)

    Garimella, Venkata BS; Ibrahim, Yehia M.; Webb, Ian K.; Ipsen, Andreas B.; Chen, Tsung-Chi; Tolmachev, Aleksey V.; Baker, Erin Shammel; Anderson, Gordon A.; Smith, Richard D.

    2015-08-19

    The process of redirecting ions through 90o turns and ‘tee’ switches utilizing Structures for Lossless Ion Manipulations (SLIM) was evaluated using theoretical and simulation methods at 4 Torr pressure. SIMION simulations were used to optimize and evaluate conditions for performing turns without loss of signal intensity or ion mobility resolving power. Fundamental considerations indicated that the “race track” effect during ion turns may incur only small losses to the ion mobility resolving power at 4 Torr pressure for the typical plume widths predicted in an optimized SLIM ‘tee’ switch design. The dynamic switching of ions into orthogonal channels was also evaluated using SIMION ion trajectory simulations, and achieved similar performance. Simulation results were in close agreement with experimental results and were used to refine SLIM designs and applied potentials for their use.

  18. Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

    SciTech Connect (OSTI)

    Sharath, S. U. Kurian, J.; Komissinskiy, P.; Hildebrandt, E.; Alff, L.; Bertaud, T.; Walczyk, C.; Calka, P.; Schroeder, T.

    2014-08-18

    The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3?V is observed up to 200?nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

  19. Efficacy of fixed filtration for rapid kVp-switching dual energy x-ray systems

    SciTech Connect (OSTI)

    Yao, Yuan; Wang, Adam S.; Pelc, Norbert J.; Department of Radiology, Stanford University, Stanford, California 94305; Department of Electrical Engineering, Stanford University, Stanford, California 94305

    2014-03-15

    Purpose: Dose efficiency of dual kVp imaging can be improved if the two beams are filtered to remove photons in the common part of their spectra, thereby increasing spectral separation. While there are a number of advantages to rapid kVp-switching for dual energy, it may not be feasible to have two different filters for the two spectra. Therefore, the authors are interested in whether a fixed added filter can improve the dose efficiency of kVp-switching dual energy x-ray systems. Methods: The authors hypothesized that a K-edge filter would provide the energy selectivity needed to remove overlap of the spectra and hence increase the precision of material separation at constant dose. Preliminary simulations were done using calcium and water basis materials and 80 and 140 kVp x-ray spectra. Precision of the decomposition was evaluated based on the propagation of the Poisson noise through the decomposition function. Considering availability and cost, the authors chose a commercial Gd{sub 2}O{sub 2}S screen as the filter for their experimental validation. Experiments were conducted on a table-top system using a phantom with various thicknesses of acrylic and copper and 70 and 125 kVp x-ray spectra. The authors kept the phantom exposure roughly constant with and without filtration by adjusting the tube current. The filtered and unfiltered raw data of both low and high energy were decomposed into basis material and the variance of the decomposition for each thickness pair was calculated. To evaluate the filtration performance, the authors measured the ratio of material decomposition variance with and without filtration. Results: Simulation results show that the ideal filter material depends on the object composition and thickness, and ranges across the lanthanide series, with higher atomic number filters being preferred for more attenuating objects. Variance reduction increases with filter thickness, and substantial reductions (40%) can be achieved with a 2 loss in intensity. The authors experimental results validate the simulations, yet were overall slightly worse than expectation. For large objects, conventional (non-K-edge) beam hardening filters perform well. Conclusions: This study demonstrates the potential of fixed K-edge filtration to improve the dose efficiency and material decomposition precision for rapid kVp-switching dual energy systems.

  20. In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO{sub 2}/TiN cells

    SciTech Connect (OSTI)

    Sowinska, Malgorzata Bertaud, Thomas; Walczyk, Damian; Calka, Pauline; Walczyk, Christian; Thiess, Sebastian; Alff, Lambert; Schroeder, Thomas

    2014-05-28

    In this study, direct experimental materials science evidence of the important theoretical prediction for resistive random access memory (RRAM) technologies that a critical amount of oxygen vacancies is needed to establish stable resistive switching in metal-oxide-metal samples is presented. In detail, a novel in-operando hard X-ray photoelectron spectroscopy technique is applied to non-destructively investigates the influence of the current compliance and direct current voltage sweep cycles on the Ti/HfO{sub 2} interface chemistry and physics of resistive switching Ti/HfO{sub 2}/TiN cells. These studies indeed confirm that current compliance is a critical parameter to control the amount of oxygen vacancies in the conducting filaments in the oxide layer during the RRAM cell operation to achieve stable switching. Furthermore, clear carbon segregation towards the Ti/HfO{sub 2} interface under electrical stress is visible. Since carbon impurities impact the oxygen vacancy defect population under resistive switching, this dynamic carbon segregation to the Ti/HfO{sub 2} interface is suspected to negatively influence RRAM device endurance. Therefore, these results indicate that the RRAM materials engineering needs to include all impurities in the dielectric layer in order to achieve reliable device performance.