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Sample records for road athens ga

  1. Making it pay in Athens, GA

    SciTech Connect (OSTI)

    Malloy, M.G.

    1997-04-01

    The materials recovery facility (MRF) in Athens, GA, is a well-fed recycling facility. But, if the local government has its way, it will be even better fed in the near future. The Athens-Clarke County (ACC) regional municipality in which the facility resides has a put-or-pay contract with the plant`s owner/operator, under which the more it feeds the MRF, the more money it receives in return, through the sale of recycled end products. The ACC Solid Waste Department uses a volume-based waste collection system that encourages residents to recycle--the more they recycle, the less trash they have to put out, and the less they pay each month. The Athens facility, which will be a featured site tour at next month`s WasteExpo `97 in nearby Atlanta, had its ground-breaking two years ago, in April 1995. ACC is responsible for delivering material--or seeing that recyclables are delivered--to the MRF, which is owned and operated by Resource Recovery Systems (RRS, Centerbrook, Conn.). Over the past year, ACC has stepped up various incentives for businesses to recycle and send their recyclables to the facility, including instituting pilot programs for commercial interests that offer them versions of volume-based collection similar to that done by residents.

  2. Athens, Ohio: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Registered Research Institutions in Athens, Ohio Ohio University Voinovich School of Leadership and Public Affairs Registered Energy Companies in Athens, Ohio American...

  3. West Athens, California: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. West Athens is a census-designated place in Los Angeles County, California.1 References...

  4. Distributed road assessment system

    DOE Patents [OSTI]

    Beer, N. Reginald; Paglieroni, David W

    2014-03-25

    A system that detects damage on or below the surface of a paved structure or pavement is provided. A distributed road assessment system includes road assessment pods and a road assessment server. Each road assessment pod includes a ground-penetrating radar antenna array and a detection system that detects road damage from the return signals as the vehicle on which the pod is mounted travels down a road. Each road assessment pod transmits to the road assessment server occurrence information describing each occurrence of road damage that is newly detected on a current scan of a road. The road assessment server maintains a road damage database of occurrence information describing the previously detected occurrences of road damage. After the road assessment server receives occurrence information for newly detected occurrences of road damage for a portion of a road, the road assessment server determines which newly detected occurrences correspond to which previously detected occurrences of road damage.

  5. Cyclotron Road

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Innovation in the digital age 3 Manufacturing startups are hard 4 At risk of a lost generation 5 Cyclotron Road: a new model Venture capital Alternative capital Corporate acquisition 6 * 8 innovators selected from 150 registered applicants in a three week application window * 4 weeks to first experiments with Berkeley Lab * 20+ Berkeley Lab scientists have engaged with the projects * Projects have avoided millions in R&D capital expenditures and raised over $5 million in follow-on funding

  6. East Avenue Truck Inspection Patterson Pass Road Vasco Road

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vasco Road Thunderbird Lane Greenville Road Greenville Road Directions to the Sandia/CA - Visitor Badge Office Interstate 580 - Oakland/San Francisco, Traveling Eastbound * Exit Vasco Road South * Continue traveling South on Vasco Road for 1.1 miles * Turn left onto Patterson Pass Road * Continue traveling East on Patterson Pass Road for 1.2 miles * Turn right onto Greenville Road * Continue traveling South on Greenville Road for 1.1 miles * Turn right onto East Avenue * Follow the road as it

  7. East Avenue Truck Inspection Patterson Pass Road Vasco Road

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sandia National Laboratories 7011 East Avenue Livermore, CA 94551 Tesla Road Interstate ... Sandia National Laboratories 7011 East Avenue Livermore, CA 94551 Tesla Road Parking To ...

  8. SREL Reprint #3169

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of Georgia, Athens, GA 30602, USA 2Department of Biological Sciences, University of New Hampshire, 46 College Road, Durham, NH 03824, USA 3Warnell School of Forestry and Natural ...

  9. Quick Facts | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Contact Information Administrator: Kenneth E. Legg Headquarters: 1166 Athens Tech Road Elberton, GA 30635-6711 Telephone: 706-213-3800 FAX: 706-213-3884 Marketing Area Georgia, ...

  10. Rapid road repair vehicle

    DOE Patents [OSTI]

    Mara, L.M.

    1998-05-05

    Disclosed is a rapid road repair vehicle capable of moving over a surface to be repaired at near normal posted traffic speeds to scan for and find at the high rate of speed, imperfections in the pavement surface, prepare the surface imperfection for repair by air pressure and vacuum cleaning, applying a correct amount of the correct patching material to effect the repair, smooth the resulting repaired surface, and catalog the location and quality of the repairs for maintenance records of the road surface. The rapid road repair vehicle can repair surface imperfections at lower cost, improved quality, at a higher rate of speed than was not heretofor possible, with significantly reduced exposure to safety and health hazards associated with this kind of road repair activities in the past. 2 figs.

  11. Rapid road repair vehicle

    DOE Patents [OSTI]

    Mara, Leo M.

    1998-01-01

    Disclosed is a rapid road repair vehicle capable of moving over a surface to be repaired at near normal posted traffic speeds to scan for and find an the high rate of speed, imperfections in the pavement surface, prepare the surface imperfection for repair by air pressure and vacuum cleaning, applying a correct amount of the correct patching material to effect the repair, smooth the resulting repaired surface, and catalog the location and quality of the repairs for maintenance records of the road surface. The rapid road repair vehicle can repair surface imperfections at lower cost, improved quality, at a higher rate of speed than was was heretofor possible, with significantly reduced exposure to safety and health hazards associated with this kind of road repair activities in the past.

  12. Road Weather Predictions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Road Tripping through the Geothermal Frontier Road Tripping through the Geothermal Frontier November 18, 2015 - 9:58am Addthis Geothermal Well Head, Utah 1 of 5 Geothermal Well Head, Utah This geothermal well head is located near the University of Utah's FORGE candidate site. The area is already renewables-friendly, with a wind farm nearby. Image: Elisabet Metcalfe, EERE Snake River Plain, Idaho 2 of 5 Snake River Plain, Idaho The mountainous view captures INL's Snake River Plain candidate site

  13. Rapid road repair vehicle

    DOE Patents [OSTI]

    Mara, Leo M.

    1999-01-01

    Disclosed are improvments to a rapid road repair vehicle comprising an improved cleaning device arrangement, two dispensing arrays for filling defects more rapidly and efficiently, an array of pre-heaters to heat the road way surface in order to help the repair material better bond to the repaired surface, a means for detecting, measuring, and computing the number, location and volume of each of the detected surface imperfection, and a computer means schema for controlling the operation of the plurality of vehicle subsystems. The improved vehicle is, therefore, better able to perform its intended function of filling surface imperfections while moving over those surfaces at near normal traffic speeds.

  14. Meters Roads N Streams

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    0 Meters Roads N Streams o Openwells E3i APT Site *. TES Plants (1) E2J Other Set-Asides lEI Hydric Soils . 370 o 370 Soils Soil Series and Phase DBaB DBaC .Pk .TrB DTrC DTrD .TuE...

  15. Road to Net Zero (Presentation)

    SciTech Connect (OSTI)

    Glover, B.

    2011-05-01

    A PowerPoint presentation on NREL's Research Support Facility (RSF) and the road to achieving net zero energy for new construction.

  16. Timber Road II | Open Energy Information

    Open Energy Info (EERE)

    Road II Jump to: navigation, search Name Timber Road II Facility Timber Road II Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Horizon Wind...

  17. Presentation: Cyclotron Road | Department of Energy

    Office of Environmental Management (EM)

    Cyclotron Road Presentation: Cyclotron Road The Secretary of Energy Advisory Board received a briefing on Cyclotron Road, lead by Ilan Gur, Director of Cyclotron Road, on January 26, 2016. Briefing on Cyclotron Road (4.07 MB) More Documents & Publications January 26, 2016 SEAB Meeting Minutes 3-D Printed Molds Hold Promise for Enhanced Wind Energy Manufacturing 3-D Printed Molds Hold Promise for Enhanced Wind Energy Manufacturing The Energy Department is exploring the production of wind

  18. JLab Road Work Update | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Road Work Update Rattley Road will be closed Beginning July 19, Rattley Road will be closed for two weeks for repair and repaving work. The section of road is highlighted in dark yellow on this map. Everyone will need to use other entry and exit points to Jefferson Lab during this period. JLab Road Work Update: Rattley Rd. is Closed; Lawrence Dr. is Open - Effective July 19 Effective July 19, 2016: Rattley Road off of Hogan Drive is closed to all traffic, and will be closed the next two weeks

  19. Image feature based GPS trace filtering for road network generation and road segmentation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yuan, Jiangye; Cheriyadat, Anil M.

    2015-10-19

    We propose a new method to infer road networks from GPS trace data and accurately segment road regions in high-resolution aerial images. Unlike previous efforts that rely on GPS traces alone, we exploit image features to infer road networks from noisy trace data. The inferred road network is used to guide road segmentation. We show that the number of image segments spanned by the traces and the trace orientation validated with image features are important attributes for identifying GPS traces on road regions. Based on filtered traces , we construct road networks and integrate them with image features to segmentmore » road regions. Lastly, our experiments show that the proposed method produces more accurate road networks than the leading method that uses GPS traces alone, and also achieves high accuracy in segmenting road regions even with very noisy GPS data.« less

  20. SREL Reprint #3188

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    School of Forestry and Natural Resources, University of Georgia, Athens, GA 30602, USA 2Department of Environmental Health Science, University of Georgia, Athens, GA 30602,...

  1. Hampton Roads Demonstration Project | Open Energy Information

    Open Energy Info (EERE)

    Project Facility Hampton Roads Demonstration Project Sector Wind energy Facility Type Offshore Wind Facility Status Proposed Developer Virginia State Government Location...

  2. Decommissioning abandoned roads to protect fish

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Decommissioning-abandoned-roads-to-protect-fish Sign In About | Careers | Contact | Investors | bpa.gov Search News & Us Expand News & Us Projects & Initiatives Expand Projects...

  3. Predicting and Utilizing the Vehicle's Past and Futuer Road Grade...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and Utilizing the Vehicle's Past and Futuer Road Grade Predicting and Utilizing the Vehicle's Past and Futuer Road Grade Predicted road grade may be used to estimate the power ...

  4. The Digital Road to Scientific Knowledge Diffusion; A Faster...

    Office of Scientific and Technical Information (OSTI)

    The Digital Road to Scientific Knowledge Diffusion; A Faster, Better Way to Scientific Progress? Citation Details In-Document Search Title: The Digital Road to Scientific Knowledge ...

  5. Montana - Access Road Easement Policy | Open Energy Information

    Open Energy Info (EERE)

    Access Road Easement Policy Jump to: navigation, search OpenEI Reference LibraryAdd to library General: Montana - Access Road Easement Policy Author Montana Department of...

  6. Particle Measurement Methodology: Comparison of On-road and Lab...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Measurement Methodology: Comparison of On-road and Lab Diesel Particle Size Distributions Particle Measurement Methodology: Comparison of On-road and Lab Diesel Particle Size ...

  7. ETA-HITP05 - HICE Vehicle Rough Road Course Test

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Effective November 1, 2004 "HICE Vehicle Rough Road Course Test" Prepared by Electric ... Appendices Appendix A - HICEV Rough Road Test Data Sheet 9 Appendix B - Vehicle Metrology ...

  8. ETA-HTP07 - Road Course Handling Test

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Effective May 1, 2004 Road Course Handling Test Prepared by Electric Transportation ... Appendix A - Hybrid Electric Vehicle Road Course Test Data Sheet 9 Appendix B - Vehicle ...

  9. ETA-UTP007 - Road Course Handling Test

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Road Course Handling Test Prepared by Electric Transportation Applications Prepared by: ... Appendix A - Electric Vehicle Road Course Handling Test Data Sheet 13 Appendix B - Vehicle ...

  10. ETA-HITP07 - Road Course Handling Test

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Effective November 1, 2004 Road Course Handling Test Prepared by Electric Transportation ... Appendix A - Hydrogen Internal Combustion Vehicle Road Course Handling Test Data Sheet 6 ...

  11. Marsh Road Power Plant Biomass Facility | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name Marsh Road Power Plant Biomass Facility Facility Marsh Road Power Plant Sector Biomass Facility Type Landfill Gas Location San Mateo County,...

  12. The Road to a Sustainable Energy Future | Princeton Plasma Physics...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MBG Auditorium The Road to a Sustainable Energy Future Professor Emily Carter, Department ... Science on Saturday, January 31, 2015, "The Road to a Sustainable Energy Future", Prof. ...

  13. Comparison of Different Load Road Implementation Strategies on...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Comparison of Different Load Road Implementation Strategies on Fuel Economy of USPS Step Vans An alternative form of measuring road loads, instead of using a chassis dynamometer ...

  14. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  15. HCEI Road Map: 2011 Edition (Brochure)

    Office of Energy Efficiency and Renewable Energy (EERE)

    This road map outlines the 2011 key goals and strategies of the Hawaii Clean Energy Initiative, was founded based on a Memorandum of Understanding between the State of Hawaii and the U.S. Department of Energy in 2008.

  16. HCEI Road Map: 2011 Edition (Brochure)

    SciTech Connect (OSTI)

    Braccio, R.; Finch, P.

    2011-08-01

    This road map outlines the 2011 key goals and strategies of the Hawaii Clean Energy Initiative, was founded based on a Memorandum of Understanding between the State of Hawaii and the U.S. Department of Energy in 2008.

  17. Commonalities between Non-road and On-road Diesel Emissions | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Commonalities between Non-road and On-road Diesel Emissions Commonalities between Non-road and On-road Diesel Emissions Poster presentation at the 2007 Diesel Engine-Efficiency & Emissions Research Conference (DEER 2007). 13-16 August, 2007, Detroit, Michigan. Sponsored by the U.S. Department of Energy's (DOE) Office of FreedomCAR and Vehicle Technologies (OFCVT). deer07_agrawal.pdf (94.78 KB) More Documents & Publications Nonroad SCR-Urea Study Diesel Engines: Environmental

  18. ADEC II Universal SCR Retrofit System for On-road and Off-road Diesel

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Engines | Department of Energy ADEC II Universal SCR Retrofit System for On-road and Off-road Diesel Engines ADEC II Universal SCR Retrofit System for On-road and Off-road Diesel Engines Presentation given at DEER 2006, August 20-24, 2006, Detroit, Michigan. Sponsored by the U.S. DOE's EERE FreedomCar and Fuel Partnership and 21st Century Truck Programs. 2006_deer_carlson.pdf (88.96 KB) More Documents & Publications DIesel Emission Control Technology Developments Cleaning Up Diesel

  19. End of the road for Roadrunner

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    End of the road for Roadrunner End of the road for Roadrunner Roadrunner, the first supercomputer to break the once-elusive petaflop barrier-one million billion calculations per second-will be decommissioned on Sunday, March 31. March 29, 2013 Roadrunner, the first supercomputer to break the once-elusive petaflop barrier-one million billion calculations per second-will be decommissioned on Sunday, March 31. Roadrunner will be decommissioned on March 31. Contact Kevin Roark Communications Office

  20. Looking down the road ahead | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking down the road ahead Looking down the road ahead November 19, 2012 As humans, we are often short-sighted. Sometimes, this may be out of necessity. When it is a struggle to provide food on the table each day, it's hard to take a long view. However, in conversations and exchanges with many people in the lab, there is a desire to know what is going to come next? What does our future hold? A starting point for such a discussion might be to ask what does the present hold. Or what does the

  1. On the Road with Fuel Saving Tools | Department of Energy

    Energy Savers [EERE]

    On the Road with Fuel Saving Tools On the Road with Fuel Saving Tools May 23, 2014 - 11:07am Addthis Driving efficiently can help you save money on gas this summer.| Photo courtesy ...

  2. Road Tripping through the Geothermal Frontier

    Broader source: Energy.gov [DOE]

    After more than a year since the announcement of available funding, the project teams for our Frontier Observatory for Research in Geothermal Energy (FORGE) each hosted our geothermal experts at their candidate sites this fall. Were calling it our road trip through the geothermal frontier.

  3. Cyclotron Road at Berkeley Lab | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Cyclotron Road at Berkeley Lab Cyclotron Road at Berkeley Lab Addthis The Department of Energy is testing a new model for clean energy research and development (R&D) through a program called Cyclotron Road. The goal is to support scientific R&D that is still too risky for private-sector investment, and too applied for academia

  4. Suggested Talking Points for Hydrogen Road Tour | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Suggested Talking Points for Hydrogen Road Tour Suggested Talking Points for Hydrogen Road Tour Suggested Talking Points for Hydrogen Road Tour (113.63 KB) More Documents & Publications Clean, Efficient, and Reliable Power for the 21st Century: Fact Sheet State of the States: Fuel Cells in America 2010 State of the States: Fuel Cells in America 2012

  5. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  6. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  7. The Digital Road to Scientific Knowledge Diffusion

    Office of Scientific and Technical Information (OSTI)

    Digital Road to Scientific Knowledge Diffusion A Faster, Better Way to Scientific Progress? By David E. Wojick, Walter L. Warnick, Bonnie C. Carroll, and June Crowe Introduction With the United States federal government spending over $130 billion annually for research and development, ways to increase the productivity of that research can have a significant return on investment. It is well known that all scientific advancement is based on work that has come before. Isaac Newton expressed this

  8. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  9. WIPP Performance Assessment: Current Status and the Road Ahead | Department

    Office of Environmental Management (EM)

    of Energy Performance Assessment: Current Status and the Road Ahead WIPP Performance Assessment: Current Status and the Road Ahead Presentation from the 2015 Annual Performance and Risk Assessment (P&RA) Community of Practice (CoP) Technical Exchange Meeting held in Richland, Washington on December 15-16, 2015. WIPP Performance Assessment: Current Status and the Road Ahead (3.02 MB) More Documents & Publications Performance Assessment Updates for Waste Isolation Pilot Plant

  10. Cyclotron Road: Creating a Home for Top Clean Energy Technology

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Entrepreneurs within our National Laboratories | Department of Energy Cyclotron Road: Creating a Home for Top Clean Energy Technology Entrepreneurs within our National Laboratories Cyclotron Road: Creating a Home for Top Clean Energy Technology Entrepreneurs within our National Laboratories September 2, 2015 - 10:53am Addthis Cyclotron Road: Creating a Home for Top Clean Energy Technology Entrepreneurs within our National Laboratories David Danielson Former Assistant Secretary for the Office

  11. Predicting and Utilizing the Vehicle's Past and Futuer Road Grade |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy and Utilizing the Vehicle's Past and Futuer Road Grade Predicting and Utilizing the Vehicle's Past and Futuer Road Grade Predicted road grade may be used to estimate the power required to propel the vehicle through the upcoming terrain so that the engine controller can deliver the necessary power. p-09_nuszkowski.pdf (208.31 KB) More Documents & Publications Thermal Simulation of Advanced Powertrain Systems Impact of Vehicle Efficiency Improvements on Powertrain

  12. IRF-World Road Statistics | Open Energy Information

    Open Energy Info (EERE)

    AgencyCompany Organization: International Road Statistics Focus Area: Transportation, Economic Development Resource Type: Dataset Website: www.irfnet.orgstatistics.php Cost:...

  13. Efficiency Improvement in an Over the Road Diesel Powered Engine...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Thermoelectric Systems Implemented in a Hybrid Configuration Efficiency Improvement in an Over the Road Diesel Powered Engine System by the Application of Advanced Thermoelectric ...

  14. Active DPF for Off-Road Particulate Matter (PM) Control

    Broader source: Energy.gov [DOE]

    This presentation details how a possibly catalyzed active diesel particulate filter can be used to control off-road particulate matter.

  15. Electricity for road transport, flexible power systems and wind...

    Open Energy Info (EERE)

    systems and wind power (Smart Grid Project) Jump to: navigation, search Project Name Electricity for road transport, flexible power systems and wind power Country Denmark...

  16. Dillard Road Solar Power Facility | Open Energy Information

    Open Energy Info (EERE)

    Facility Facility Dillard Road Solar Power Facility Sector Solar Facility Type Photovoltaics Facility Status In Service Developer Recurrent Energy Energy Purchaser Sacramento...

  17. LANL closes road, trails for safety reasons; flooding and erosion...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    closed for safety reasons LANL closes road, trails for safety reasons; flooding and erosion control work under way Closure is in response to the increased fire risk and...

  18. Ed Westcotts photography goes on the road

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    photographer Ed Westcott, is going on the road. The Oak Ridge Secret City Photographic History Exhibit consists of selected images from many of Westcott's works that have...

  19. Road Transportable Analytical Laboratory (RTAL) system

    SciTech Connect (OSTI)

    Finger, S.M.

    1995-10-01

    The goal of the Road Transportable Analytical Laboratory (RTAL) Project is the development and demonstration of a system to meet the unique needs of the DOE for rapid, accurate analysis of a wide variety of hazardous and radioactive contaminants in soil, groundwater, and surface waters. This laboratory system has been designed to provide the field and laboratory analytical equipment necessary to detect and quantify radionuclides, organics, heavy metals and other inorganic compounds. The laboratory system consists of a set of individual laboratory modules deployable independently or as an interconnected group to meet each DOE site`s specific needs.

  20. A queuing model for road traffic simulation

    SciTech Connect (OSTI)

    Guerrouahane, N.; Aissani, D.; Bouallouche-Medjkoune, L.; Farhi, N.

    2015-03-10

    We present in this article a stochastic queuing model for the raod traffic. The model is based on the M/G/c/c state dependent queuing model, and is inspired from the deterministic Godunov scheme for the road traffic simulation. We first propose a variant of M/G/c/c state dependent model that works with density-flow fundamental diagrams rather than density-speed relationships. We then extend this model in order to consider upstream traffic demand as well as downstream traffic supply. Finally, we show how to model a whole raod by concatenating raod sections as in the deterministic Godunov scheme.

  1. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  2. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    SciTech Connect (OSTI)

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  3. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  4. EA-1980: Spar Canyon-Round Valley Access Road System Improvements...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    80: Spar Canyon-Round Valley Access Road System Improvements, Custer County, Idaho EA-1980: Spar Canyon-Round Valley Access Road System Improvements, Custer County, Idaho Summary...

  5. ETA-HTP05 - Hybrid Electric Vehicle Rough Road Course Test

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    "Hybrid Electric Vehicle Rough Road Course Test" Prepared by Electric Transportation ... Appendices Appendix A - Electric Vehicle Rough Road Test Data Sheet 11 Appendix B - ...

  6. Savannah River Site 1991 Road Erosion Inventory.

    SciTech Connect (OSTI)

    Jones, Cliff.

    2007-06-22

    Final Report. USDA Forest Service, Savannah River, Aiken, SC. 28 pp. Abstract - This paper explains the rationale and results of a 1991 road erosion inventory conducted by members of the USDA Forest Service – Savannah River (FS-SR) and USDA Natural Resources Conservation Service (NRCS). The inventory provided information for the Department of Energy - Savannah River (DOE-SR) to justify the need for developing an erosion and sediment control program with appropriate funding, personnel, and equipment. Federally managed since the early 1950’s, the SRS is located on 198,344 acres (80,301 hectares) in the South Carolina counties of Aiken, Barnwell, and Allendale. Located along the eastern border of the Savannah River, the SRS is located within the Upper and Lower Coastal Plains of South Carolina.

  7. The Road to Hiroshima and Beyond | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    The Road to Hiroshima and Beyond The Road to Hiroshima and Beyond October 20, 2009 The RERF program is not a typical research program since it aims at fostering the health and welfare of the atomic-bomb survivors. A unique nurse's perspective on the RERF and the health of the A-bomb survivors is presented by Dr. Amy Knowles. The Road to Hiroshima and Beyond (127.75 KB) More Documents & Publications Report of the Senior Review Panel on the Review of the Radiation Effects Research Foundation

  8. Which Road to Travel? | Y-12 National Security Complex

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Which Road to Travel? Which Road to Travel? Posted: July 16, 2013 - 6:06pm There's no question which road (crosswalk) to travel when you park in the North Portal parking lot. Thanks to the recent restriping of the parking lot, the crosswalk and parking spaces are clearly marked. Earlier this year, the Employee-Driven Safety Campaign was created as a way to easily submit safety issues as we continue pursuing Safety for Life and our Voluntary Protection Program focus. Y-12 is a large site, so it

  9. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  10. 2009 Voluntary Protection Programs Participants' Association (VPPPA) Presentation: Follow The Yellow Brick Road to Safety

    Broader source: Energy.gov [DOE]

    2009 Voluntary Protection Programs Participants' Association (VPPPA) Presentation: Follow The Yellow Brick Road to Safety

  11. Roger Road Reservoir Single-Axis Photovoltaic Array

    Broader source: Energy.gov [DOE]

    In this photograph, the Roger Road Reclamation Water Reservoir features a 110-kilowatt (kW) solar array. This system was built on a reservoir deck as its special design allowed for a single-axis...

  12. The #LabsRoadShow: National Lab Contributions

    Broader source: Energy.gov [DOE]

    Join us for Stop Two of the Labs Road Show. All week we'll be highlighting the most notable contributions National Labs have made to science, energy and national security.

  13. Microsoft Word - FINAL Contact Record 2012-01 Roads Maintenance

    Office of Legacy Management (LM)

    ... Section 4.1, regarding the work proposed by the U.S. Department of Energy (DOE). ... The locations are as follows: * Location 1: Gravel road access to the Solar Ponds Plume ...

  14. Online Planning Tools Make Road Trips a Snap | Department of...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Driving efficiently can help you save money on gas this summer.| Photo courtesy of iStockphoto.comHelpingHandPhotos On the Road with Fuel Saving Tools Simple tips like removing ...

  15. Make Your Next Road Trip Fuel Efficient | Department of Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Driving efficiently can help you save money on gas this summer.| Photo courtesy of iStockphoto.comHelpingHandPhotos On the Road with Fuel Saving Tools Cruising to Energy ...

  16. Airport Road, Wyoming: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Airport Road is a census-designated place in Washakie County, Wyoming. It falls under...

  17. Airport Road Addition, Texas: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Airport Road Addition is a census-designated place in Brooks County, Texas.1 References ...

  18. The road to sustainability (Journal Article) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Journal Article: The road to sustainability Citation Details In-Document Search Title: The ... Report Number(s): LA-UR-09-05968; LA-UR-09-5968 Journal ID: ISSN 0953-8585; PHWOEW; TRN: ...

  19. U.S. Virgin Islands Energy Road Map: Analysis

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy Road Map: Analysis Eric Lantz, Dan Olis, and Adam Warren Technical Report NRELTP-7A20-52360 September 2011 NREL is a national laboratory of the U.S. Department of Energy, ...

  20. Analysis Reveals Impact of Road Grade on Vehicle Energy Use ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    with and without road grade for five vehicle models-con- ventional, hybrid, and all-electric midsized cars and conventional and hybrid SUVs. Aggregate results of the study...

  1. Climate Rapid Overview and Decision Support (C-ROADS) Simulator...

    Open Energy Info (EERE)

    Climate Rapid Overview and Decision Support (C-ROADS) Simulator1 Related Tools Gold Standard Program Model CRiSTAL VS Ex Ante Appraisal Carbon-Balance Tool (EX-ACT) ......

  2. Comparison of On-Road Portable and Bench Emission Measurements

    Broader source: Energy.gov [DOE]

    Chassis dynamometer testing using a conventional emissions bench and on-road testing with a portable emissions system were performed to compare exhaust emissions from selected vehicles by both techniques.

  3. 1,"Elm Road Generating Station","Coal","Wisconsin Electric Power...

    U.S. Energy Information Administration (EIA) Indexed Site

    Wisconsin" ,"Plant","Primary energy source","Operating company","Net summer capacity (MW)" 1,"Elm Road Generating Station","Coal","Wisconsin Electric Power Co",1268 2,"Point Beach ...

  4. Road Transportable Analytical Laboratory system. Phase 1

    SciTech Connect (OSTI)

    Finger, S.M.; Keith, V.F.; Spertzel, R.O.; De Avila, J.C.; O`Donnell, M.; Vann, R.L.

    1993-09-01

    This developmental effort clearly shows that a Road Transportable Analytical Laboratory System is a worthwhile and achievable goal. The RTAL is designed to fully analyze (radioanalytes, and organic and inorganic chemical analytes) 20 samples per day at the highest levels of quality assurance and quality control. It dramatically reduces the turnaround time for environmental sample analysis from 45 days (at a central commercial laboratory) to 1 day. At the same time each RTAL system will save the DOE over $12 million per year in sample analysis costs compared to the costs at a central commercial laboratory. If RTAL systems were used at the eight largest DOE facilities (at Hanford, Savannah River, Fernald, Oak Ridge, Idaho, Rocky Flats, Los Alamos, and the Nevada Test Site), the annual savings would be $96,589,000. The DOE`s internal study of sample analysis needs projects 130,000 environmental samples requiring analysis in FY 1994, clearly supporting the need for the RTAL system. The cost and time savings achievable with the RTAL system will accelerate and improve the efficiency of cleanup and remediation operations throughout the DOE complex.

  5. Road Tripping through the Geothermal Frontier | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Road Tripping through the Geothermal Frontier Road Tripping through the Geothermal Frontier November 18, 2015 - 9:58am Addthis Geothermal Well Head, Utah 1 of 5 Geothermal Well Head, Utah This geothermal well head is located near the University of Utah's FORGE candidate site. The area is already renewables-friendly, with a wind farm nearby. Image: Elisabet Metcalfe, EERE Snake River Plain, Idaho 2 of 5 Snake River Plain, Idaho The mountainous view captures INL's Snake River Plain candidate site

  6. Road to the hydrogen highway | Y-12 National Security Complex

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Road Tripping through the Geothermal Frontier Road Tripping through the Geothermal Frontier Addthis Geothermal Well Head, Utah 1 of 5 Geothermal Well Head, Utah This geothermal well head is located near the University of Utah's FORGE candidate site. The area is already renewables-friendly, with a wind farm nearby. Image: Elisabet Metcalfe, EERE Snake River Plain, Idaho 2 of 5 Snake River Plain, Idaho The mountainous view captures INL's Snake River Plain candidate site which is located on the

  7. New Directions in Engines -- The Road Ahead | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    -- The Road Ahead New Directions in Engines -- The Road Ahead The future of internal combustion engines will depend on improved technology and significant evolution as new alternatives enter the mix as an impaact or regulation deer09_pinson.pdf (291.68 KB) More Documents & Publications Application of Synergistic Technologies to Achieve High Levels of Gasoline Engine Downsizing Diesel Passenger Car Technology for Low Emissions and CO2 Compliance ORC Closed Loop Control Systems for Transient

  8. New National Clean Fleets Partners Build New Roads to Sustainability |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy New National Clean Fleets Partners Build New Roads to Sustainability New National Clean Fleets Partners Build New Roads to Sustainability August 5, 2014 - 4:11pm Addthis Republic Services is one of three new companies participating in the National Clean Fleets Partnership. The company aims to have more than 2,500 trucks running on alternative fuel by 2015. | Photo courtesy of Republic Services Republic Services is one of three new companies participating in the National

  9. Building the American Clean Energy Innovation Ecosystem: Cyclotron Road

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Announces New Innovators, Success of First Cohort | Department of Energy the American Clean Energy Innovation Ecosystem: Cyclotron Road Announces New Innovators, Success of First Cohort Building the American Clean Energy Innovation Ecosystem: Cyclotron Road Announces New Innovators, Success of First Cohort March 15, 2016 - 2:05pm Addthis Raymond Weitekamp and Corinne Allen utilize the resources and expertise of Lawrence Berkeley National Laboratory’s Molecular Foundry lab to analyze and

  10. Heavy Duty Diesels - The Road Ahead | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Duty Diesels - The Road Ahead Heavy Duty Diesels - The Road Ahead This presentation gives a landscape picture of diesel engine technologies from the Daimler point of view. deer10_bockenhoff.pdf (1.16 MB) More Documents & Publications Heavy-Duty Powertrain DevelopmentCurrent Status and Future Opportunities Integrated Vehicle and Powertrain Technology for EPA 2010 and Beyond Daimler's SuperTruck Program; 50% Brake Thermal Efficiency

  11. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  12. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  13. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  14. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  15. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect (OSTI)

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  16. Innovative secondary support systems for gate roads

    SciTech Connect (OSTI)

    Barczak, T.; Molinda, G.M.; Zelanko, J.C.

    1996-12-31

    With the development of the shield support, the primary requirement for successful ground control in longwall mining is to provide stable gate road and bleeder entries. Wood cribbing has been the dominant form of secondary and supplemental support. However, the cost and limited availability of timber, along with the poor performance of softwood crib supports, has forced western U.S. mines to explore the utilization of support systems other than conventional wood cribbing. The recent success of cable bolts has engendered much interest from western operators. Eastern U.S. coal operators are also now experimenting with various intrinsic and freestanding alternative support systems that provide effective ground control while reducing material handling costs and injuries. These innovative freestanding support systems include (1) {open_quotes}The Can{close_quotes} support by Burrell Mining Products International, Inc., (2) Hercules and Link-N-Lock wood cribs and Propsetter supports by Strata Products (USA) Inc., (3) Variable Yielding Crib and Power Crib supports by Mountainland Support Systems, (4) the Confined Core Crib developed by Southern Utah Fuels Corporation; and (5) the MEGA prop by MBK Hydraulik. This paper assesses design considerations and compares the performance and application of these alternative secondary support systems. Support performance in the form of load-displacement behavior is compared to conventional wood cribbing. Much of the data was developed through full-scale tests conducted by the U.S. Bureau of Mines (USBM) at the Strategic Structures Testing Laboratory in the unique Mine Roof Simulator load frame at the Pittsburgh Research Center. A summary of current mine experience with these innovative supports is also documented.

  17. Road ecology in environmental impact assessment

    SciTech Connect (OSTI)

    Karlson, Mårten Mörtberg, Ulla Balfors, Berit

    2014-09-15

    Transport infrastructure has a wide array of effects on terrestrial and aquatic ecosystems, and road and railway networks are increasingly being associated with a loss of biodiversity worldwide. Environmental Impact Assessment (EIA) and Strategic Environmental Assessment (SEA) are two legal frameworks that concern physical planning, with the potential to identify, predict, mitigate and/or compensate transport infrastructure effects with negative impacts on biodiversity. The aim of this study was to review the treatment of ecological impacts in environmental assessment of transport infrastructure plans and projects. A literature review on the topic of EIA, SEA, biodiversity and transport infrastructure was conducted, and 17 problem categories on the treatment of biodiversity were formulated by means of a content analysis. A review of environmental impact statements and environmental reports (EIS/ER) produced between 2005 and 2013 in Sweden and the UK was then conducted using the list of problems as a checklist. The results show that the treatment of ecological impacts has improved substantially over the years, but that some impacts remain problematic; the treatment of fragmentation, the absence of quantitative analysis and that the impact assessment study area was in general delimited without consideration for the scales of ecological processes. Actions to improve the treatment of ecological impacts could include improved guidelines for spatial and temporal delimitation, and the establishment of a quantitative framework including tools, methods and threshold values. Additionally, capacity building and further method development of EIA and SEA friendly spatial ecological models can aid in clarifying the costs as well as the benefits in development/biodiversity tradeoffs. - Highlights: • The treatment of ecological impacts in EIA and SEA has improved. • Quantitative methods for ecological impact assessment were rarely used • Fragmentation effects were recognized

  18. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  19. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  20. (In,Ga)As/GaP electrical injection quantum dot laser

    SciTech Connect (OSTI)

    Heidemann, M. Höfling, S.; Kamp, M.

    2014-01-06

    The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.

  1. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  2. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  3. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  4. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  5. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Final Environmental Impact Statement EIS-0476: ...

  6. Floodplain and Wetlands Assessment for Construction of a Second Full Service Access Road over Lena Gulch

    Broader source: Energy.gov [DOE]

    Floodplain and Wetlands Assessment for Construction of a Second Full Service Access Road over Lena Gulch from South Golden Road to the National Renewable Energy Laboratory’s South Table Mountain Complex, Golden, Colorado.

  7. New EV Everywhere Logo is Ready for the Road | Department of...

    Office of Environmental Management (EM)

    EV Everywhere Logo is Ready for the Road New EV Everywhere Logo is Ready for the Road November 6, 2015 - 1:17pm Addthis The brand-new logo for EV Everywhere, the effort to ...

  8. DOE Zero Energy Ready Home Case Study: Shore Road Project - Old...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Shore Road Project - Old Greenwich, Connecticut DOE Zero Energy Ready Home Case Study: Shore Road Project - Old Greenwich, Connecticut Case study of a DOE Zero Energy Ready Home in ...

  9. Cleaning Up Non-Road Diesel Vehicles: A Public Health Imperative |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Non-Road Diesel Vehicles: A Public Health Imperative Cleaning Up Non-Road Diesel Vehicles: A Public Health Imperative 2002 DEER Conference Presentation: Union of Concerned Scientists 2002_deer_monahan.pdf (180.53 KB) More Documents & Publications EPA Diesel Update A View From The Bridge Commonalities between Non-road and On-road Diesel Emissions

  10. Carrier quenching in InGaP/GaAs double heterostructures

    SciTech Connect (OSTI)

    Wells, Nathan P. Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T.; Forbes, David V.; Hubbard, Seth M.

    2015-08-14

    Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

  11. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  12. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  13. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  14. Road Transportable Analytical Laboratory (RTAL) system: Volume I. Final report

    SciTech Connect (OSTI)

    Finger, S.M.; De Avila, J.C.; Keith, V.F.

    1996-08-01

    This report describes a portable laboratory system for the analysis of soils, ground water, and surface waters for the detection and quantification of hazardous materials, organics, and radioactive contaminants. The goal of the Road Transportable Analytical Laboratory (RTAL) is a sample throughput of 20 samples per day, providing a full range of analysis on each sample within 16 hours of preparation with high accuracy.

  15. Road to Recovery: Bringing Recovery to Small Town America

    ScienceCinema (OSTI)

    Nettamo, Paivi

    2012-06-14

    The Recovery Act hits the road to reach out to surrounding towns of the Savannah River Site that are struggling with soaring unemployment rates. This project helps recruit thousands of people to new jobs in environmental cleanup at the Savannah River Site.

  16. Story Road Landfill Solar Site Evaluation: San Jose

    Office of Energy Efficiency and Renewable Energy (EERE)

    This report describes the findings of a solar site evaluation conducted at the Story Road Landfill (Site) in the City of San Jose, California (City). This evaluation was conducted as part of a larger study to assess solar potential at multiple public facilities within the City.

  17. HCEI Road Map and Introduction and Overview 2011

    Broader source: Energy.gov [DOE]

    This road map is a summary of the 2011 key goals and strategies of the Hawaii Clean Energy Initiative, which was founded based on a Memorandum of Understanding between the State of Hawaii and the U.S. Department of Energy in 2008.

  18. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  19. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  20. Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

    SciTech Connect (OSTI)

    Chaldyshev, V.V.; Nielsen, B.; Mendez, E.E.; Musikhin, Yu.G.; Bert, N.A.; Ma, Zh.; Holden, Todd

    2005-03-28

    1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

  1. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  2. Carbon Cycle Engineering | Open Energy Information

    Open Energy Info (EERE)

    Cycle Engineering Jump to: navigation, search Name: Carbon Cycle Engineering Address: 13725 Dutch Creek Road Place: Athens, Ohio Zip: 45701 Sector: Biofuels, Biomass, Efficiency,...

  3. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  4. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  5. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    SciTech Connect (OSTI)

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  6. Ensuring the Availability and Reliability of Urea Dosing For On-Road and

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Non-Road | Department of Energy Ensuring the Availability and Reliability of Urea Dosing For On-Road and Non-Road Ensuring the Availability and Reliability of Urea Dosing For On-Road and Non-Road 2003 DEER Conference Presentation: Hilite International 2003_deer_barton.pdf (1.3 MB) More Documents & Publications SCR Systems for Heavy Duty Trucks: Progress Towards Meeting Euro 4 Emission Standards in 2005 Safe and compact ammonia storage/delivery systems for SCR-DeNOX in automotive units

  7. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  8. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  9. Vegetation Loblolly Pine N Site Boundary N Streams Roads

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Loblolly Pine N Site Boundary N Streams Roads [2J Other Set-Asides 6£] Hy~ric Soils < ____ n ____ ** __ ._ ** _______ 300 0 - L " " " " , 300 781 .3a 600 Meters Soils Soil Series and Phase _TrB Figure 4-1. Plant CO/lllllllllties and soils associated with the Loblolly Pine Stand Set-Aside Area. sc 4-5 Set-Aside 4: Loblolly Pine Stand

  10. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect (OSTI)

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  11. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  12. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  13. Cultural Resource Investigations for a Multipurpose Haul Road on the Idaho National Laboratory

    SciTech Connect (OSTI)

    Brenda R. Pace; Cameron Brizzee; Hollie Gilbert; Clayton Marler; Julie Braun Williams

    2010-08-01

    The U. S. Department of Energy, Idaho Operations Office is considering options for construction of a multipurpose haul road to transport materials and wastes between the Materials and Fuels Complex (MFC) and other Idaho National Laboratory (INL) Site facilities. The proposed road will be closed to the public and designed for limited year-round use. Two primary options are under consideration: a new route south of the existing T-25 power line road and an upgrade to road T-24. In the Spring of 2010, archaeological field surveys and initial coordination and field reconnaissance with representatives from the Shoshone-Bannock Tribes were completed to identify any resources that may be adversely affected by the proposed road construction and to develop recommendations to protect any listed or eligible for listing on the National Register of Historic Places. The investigations showed that 24 archaeological resources and one historic marker are located in the area of potential effects for road construction and operation south of the T-25 powerline road and 27archaeological resources are located in the area of potential effects for road construction and operation along road T-24. Generalized tribal concerns regarding protection of natural resources were also documented in both road corridors. This report outlines recommendations for additional investigations and protective measures that can be implemented to minimize adverse impacts to the identified resources.

  14. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  15. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  16. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  17. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  18. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  19. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  20. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  1. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  2. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  3. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  4. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect (OSTI)

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  5. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect (OSTI)

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  6. Hit the Road: Applying Lessons from National Campaigns to a Local Context

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    (201) | Department of Energy Hit the Road: Applying Lessons from National Campaigns to a Local Context (201) Hit the Road: Applying Lessons from National Campaigns to a Local Context (201) Better Buildings Residential Network Peer Exchange Call Series: Hit the Road: Applying Lessons from National Campaigns to a Local Context (201), call slides and discussion summary. Call Slides and Discussion Summary (2.91 MB) More Documents & Publications Leveraging Seasonal Opportunities for Marketing

  7. Evaluation of Range Estimates for Toyota FCHV-adv Under Open Road Driving

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Conditions | Department of Energy Range Estimates for Toyota FCHV-adv Under Open Road Driving Conditions Evaluation of Range Estimates for Toyota FCHV-adv Under Open Road Driving Conditions An evaluation to independently and objectively verify driving ranges of >400 miles announced by Toyota for its new advanced Fuel Cell Hybrid Vehicle (FCHV-adv) utilizing 70 MPa compressed hydrogen. Evaluation of Range Estimates for Toyota FCHV-adv Under Open Road Driving Conditions (1.14 MB) More

  8. Application of SCR and PM-METALIT for Non-Road Applications: SCRi

    Broader source: Energy.gov [DOE]

    Advantages of this new application of SCR and PM-METALIT for non-road applications include compact design, robustness, low backpressure, and cost

  9. Gobble Up Fuel Savings on Your Next Road Trip with My Trip Calculator |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Gobble Up Fuel Savings on Your Next Road Trip with My Trip Calculator Gobble Up Fuel Savings on Your Next Road Trip with My Trip Calculator November 19, 2012 - 9:51am Addthis Save time and money on your next road trip with fueleconomy.gov's newest tool, <a href="http://www.fueleconomy.gov/trip/">My Trip Calculator</a>. | Photo courtesy of iStockphoto.com/gioadventures. Save time and money on your next road trip with fueleconomy.gov's newest tool, My

  10. Hit the Road: Applying Lessons from National Campaigns to a Local...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Hit the Road: Applying Lessons from National Campaigns to a Local Context (201) July 23, 2015 Call Slides and Discussion Summary Agenda Call Logistics and Introductions ...

  11. ETA-HITP01 - Implementation of SAE Standard J1263 - Road Load...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Appendices Appendix A - Vehicle Road Load Test Data Sheet 9 Appendix B - Metrology Usage ... those specifically addressed by SAE Test Standards, nor of any regulatory agency ...

  12. ETA-HTP01 Revision 2 - Implementation of SAE Standard J2263-Road...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Appendices Appendix A - Vehicle Road Load Test Data Sheet 9 Appendix B - Metrology Usage ... those specifically addressed by SAE Test Standards, nor of any regulatory agency ...

  13. The Development and On-Road Performance and Durability of the...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    The Development and On-Road Performance and Durability of the Four-Way Emission Control SCRTTM System 2003 DEER Conference Presentation: Johnson Matthey plc, Cummins Inc. ...

  14. GIZ Sourcebook Module 5b: Urban Road Safety | Open Energy Information

    Open Energy Info (EERE)

    with the consequential social, economic, and health burdens imposing heavy constraints on sustainable development. This module focuses on addressing local road safety, creating a...

  15. Archaeological investigations on the Buckboard Mesa Road Project

    SciTech Connect (OSTI)

    Amick, D.S.; Henton, G.H.; Pippin, L.C.

    1991-10-01

    In 1986, the Desert Research Institute (DRI) conducted an archaeological reconnaissance of a new alignment for the Buckboard Mesa Road on the Nevada Test Site for the Department of Energy (DOE). During this reconnaissance, several archaeological sites of National Register quality were discovered and recorded including a large quarry, site 26Ny4892, and a smaller lithic scatter, site 26Ny4894. Analysis of the debitage at 26Ny4892 indicates that this area was used primarily as a quarry for relatively small cobbles of obsidian found in the alluvium. Lithic reduction techniques used here are designed for efficiently reducing small pieces of toolstone and are oriented towards producing flake blanks from small cores and bifacially reducing exhausted cores. Projectile point cross references indicate that the area has seen at least casual use for about 10,000 years and more sustained use for the last 3,000 years. Initial obsidian hydration measurements indicate sustained use of the quarry for about the last 3,000 years although the loci of activities appear to change over time. Based on this study, the DRI recommends that quarrying activities in the area of 26Ny4892 are sufficiently sampled and that additional investigations into that aspect of prehistoric activity in the area are not necessary. This does not apply to other aspects of prehistoric use. DRI recommends that preconstruction surveys continue to identify nonquarrying, prehistoric utilization of the area. With the increased traffic on the Buckboard Mesa Road, there is a greater potential for vandalism to sites of National Register-quality located near the road. The DRI recommends that during the orientation briefing the workers at the Test Site be educated about the importance of cultural resources and the need for their protection. 202 refs., 41 figs., 52 tabs.

  16. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  17. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  18. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  19. The Rocky Road to Nuclear Zero Professor R. Rajaraman

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Rocky Road to Nuclear Zero Professor R. Rajaraman Jawaharlal Nehru University, New Delhi India November 18, 2015 4:00 p.m. - Wilson Hall, One West The call for complete nuclear disarmament is as old as the nuclear era itself. But as the Cold War warmed up and nuclear arsenals grew, these weapons seemed to be here to stay. Neither a string of pious UN resolutions nor treaties like NPT and CTBT seemed to lead to complete disarmament. However, hopes for a world without nuclear weapons enjoyed a

  20. COLLOQUIUM: Living with Climate Change: The Road from Paris | Princeton

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Plasma Physics Lab April 20, 2016, 4:15pm to 5:30pm Colloquia MBG Auditorium (284 cap.) COLLOQUIUM: Living with Climate Change: The Road from Paris Dr. Dale Jamieson New York University Presentation: File WC20APR2016_DJamieson.pptx The twenty-first Conference of the Parties (COP21) of the United Nations Framework Convention on Climate Change (UNFCCC) in Paris ended with an agreement that some call "the world's greatest diplomatic success" while others insist it is "too

  1. Innovative technology summary report: Road Transportable Analytical Laboratory (RTAL)

    SciTech Connect (OSTI)

    1998-10-01

    The Road Transportable Analytical Laboratory (RTAL) has been used in support of US Department of Energy (DOE) site and waste characterization and remediation planning at Fernald Environmental Management Project (FEMP) and is being considered for implementation at other DOE sites, including the Paducah Gaseous Diffusion Plant. The RTAL laboratory system consists of a set of individual laboratory modules deployable independently or as an interconnected group to meet each DOE site`s specific analysis needs. The prototype RTAL, deployed at FEMP Operable Unit 1 Waste Pits, has been designed to be synergistic with existing analytical laboratory capabilities, thereby reducing the occurrence of unplanned rush samples that are disruptive to efficient laboratory operations.

  2. On-sun concentrator performance of GaInP/GaAs tandem cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Sinha, K.; McMahon, W.E.; Olson, J.M.

    1996-05-01

    The GaInP/GaAs concentrator device has been adapted for and tested in a prototype {open_quotes}real-world{close_quotes} concentrator power system. The device achieved an on-sun efficiency of 28% {+-} 1% in the range of approximately 200-260 suns with device operating temperatures of 38{degrees}C to 42{degrees}C. The authors discuss ways of further improving this performance for future devices.

  3. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  4. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Hajłasz, M.; Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S.; Gravesteijn, D. J.; Rietveld, F. J. R.; Schmitz, J.

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  5. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  6. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  7. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  8. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  9. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect (OSTI)

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  10. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  11. Comparison of Different Load Road Implementation Strategies on Fuel Economy of USPS Step Vans

    Broader source: Energy.gov [DOE]

    An alternative form of measuring road loads, instead of using a chassis dynamometer and a method described in 40 CFR section 86.1229-85, was conducted on on-road coastdowns, and regression analysis was used to determine the characteristics of the two U.S. Postal Service step vans, one of which was a hybrid model

  12. SREL Reprint #3185

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5 Effects of Roads and Crabbing Pressures on Diamondback Terrapin Populations in Coastal Georgia Andrew M. Grosse1,2, John C. Maerz1, Jeffrey Hepinstall-Cymerman1, and Michael E. Dorcas3 1Daniel B. Warnell School of Forestry and Natural Resources, The University of Georgia, Athens, GA 30602, USA 2Savannah River Ecology Lab, Savannah River Site, Building 737-A, Drawer E, Aiken, SC 29802, USA 3Davidson College, Davidson, NC 28035, USA Abstract: Human activities, including the harvesting of natural

  13. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  14. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper; Reedy, Robert

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  15. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  16. Effects of Intermediate Ethanol Blends on Legacy Vehicles and Small Non-Road Engines, Report 1 … Updated Feb 2009

    Broader source: Energy.gov [DOE]

    Effects of Intermediate Ethanol Blends on Legacy Vehicles and Small Non-Road Effects of Intermediate Ethanol Blends on Legacy Vehicles and Small Non-Road Engines, Report 1 … Updated Feb 2009

  17. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  18. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  19. Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

    SciTech Connect (OSTI)

    Mohan, Nagaboopathy; Raghavan, Srinivasan; Manikant,; Soman, Rohith

    2015-10-07

    AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 × 10{sup 9}/cm{sup 2} and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600–1900 cm{sup 2}/V s at a carrier concentration of 0.7–0.9 × 10{sup 13}/cm{sup 2}. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.

  20. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  1. SREL Reprint #3172

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    School of Forestry and Natural Resources, University of Georgia, Athens, GA 30602, USA 2Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802,...

  2. SREL Reprint #3120

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1Department of Environmental Health Science, University of Georgia, Athens, GA 30602, USA 2Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802,...

  3. SREL Reprint #3047

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Department of Geology, The University of Georgia, Athens, GA 30602, USA 4Department of Chemistry and Earth Sciences, Dartmouth College, Hanover NH, USA Abstract: Despite the...

  4. SREL Reprint #3210

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    & Environmental Sciences, University of Kentucky, Lexington, KY, USA 4Department of Microbiology, University of Georgia, Athens, GA, USA Abstract: Arkashin Schurf (Arkashin) and...

  5. Carbohydrate and lignin are simultaneously solubilized from unpretreat...

    Office of Scientific and Technical Information (OSTI)

    University of Georgia, Athens, GA Georgia Institute of Technology ORNL North Carolina State University National Renewable Energy Laboratory (NREL) National Energy Renewable ...

  6. Reducing the environmental impact of road and rail vehicles

    SciTech Connect (OSTI)

    Mayer, R.M.; Poulikakos, L.D.; Lees, A.R.; Heutschi, K.; Kalivoda, M.T.

    2012-01-15

    Methods have been developed to measure in situ the dynamic impact of both road and rail vehicles on the infrastructure and the environment. The resulting data sets have been analysed to quantify the environmental impacts in a transparent manner across both modes. A primary concern is that a small number of vehicles are being operated outside safe or regulatory limits which can have a disproportionate large impact. The analysis enables the various impacts to be ranked across both modes so enabling one to discern the benefits of intermodal transport. The impact of various policy options is considered and how to identify vehicles which can be classified as environmentally friendly. This would require European agreement as many heavy goods vehicle operate across country borders.

  7. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  8. Electrical compensation by Ga vacancies in Ga{sub 2}O{sub 3} thin films

    SciTech Connect (OSTI)

    Korhonen, E.; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.

    2015-06-15

    The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga{sub 2}O{sub 3} thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga{sub 2}O{sub 3} thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In{sub 2}O{sub 3}, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as O{sub i}.

  9. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  10. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  11. Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn

    SciTech Connect (OSTI)

    Plankina, S. M.; Vikhrova, O. V.; Danilov, Yu. A.; Zvonkov, B. N.; Kalentyeva, I. L.; Nezhdanov, A. V.; Chunin, I. I.; Yunin, P. A.

    2015-01-15

    The results of complex studies of InGaAs/GaAs nanoheterostructures δ-doped with Mn are reported. The structures are grown by metal-organic vapor-phase epitaxy in combination with laser deposition. By confocal Raman spectroscopy, it is shown that the low-temperature δ-doped GaAs cap layers are of higher crystal quality compared to uniformly doped layers. Scattering of light in the coupled phonon-plasmon mode is observed. The appearance of this mode is conditioned by the diffusion of manganese from the δ-layer. The thickness of the cap layer is found to be d{sub c} ≈ 9–20 nm, optimal for attainment of the highest photoluminescence intensity of the quantum well and the highest layer concentration of holes by doping with manganese.

  12. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  13. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect (OSTI)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  14. Refractive index of erbium doped GaN thin films

    SciTech Connect (OSTI)

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.

    2014-08-25

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300 arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540 nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

  15. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  16. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  17. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  18. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. ); Koploy, M.A. )

    1992-01-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  19. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J.; Koploy, M.A.

    1992-08-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  20. Athens, Greece: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Equivalent URI DBpedia GeoNames ID 264371 Coordinates 37.97918, 23.716647 Show Map Loading map... "minzoom":false,"mappingservice":"googlemaps3","type":...

  1. Athens, Ohio: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Ohio American Hydrogen Corporation Carbon Cycle Engineering Dovetail Solar and Wind DuPont Electronic Technologies, Inc. Global Cooling Inc. Panich + Noel Architects Panich,...

  2. Lessons learnt from post EIS evaluations of national road schemes in Ireland

    SciTech Connect (OSTI)

    King, E.A.; O'Malley, V.P.

    2012-01-15

    The Irish National Roads Authority (NRA) recently completed over twenty post environmental impact assessment evaluations of noise chapters prepared as part of Environmental Impact Statements (EISs) for new national road schemes in Ireland. The study focused on a range of issues including a review of noise monitoring procedures, noise prediction methodologies and an assessment of the effectiveness of noise mitigation measures currently in use on national road schemes. This review was carried out taking cognisance of best international practices for noise assessment and methodologies used to mitigate road traffic noise. The primary focus of the study was to assess the actual noise impacts of national road scheme developments and to revise, where necessary, methodologies recommended in the current NRA guidance document describing the treatment of noise on national road schemes. This paper presents a summary of the study and identifies a number of key areas that should be considered prior to the development of future guidance documents. - Highlights: Black-Right-Pointing-Pointer Presents a post-EIS evaluation of noise assessments for national roads in Ireland. Black-Right-Pointing-Pointer The effectiveness of some noise mitigation measures is critically evaluated. Black-Right-Pointing-Pointer Issues related to the current EIS noise assessment methodologies are discussed. Black-Right-Pointing-Pointer Implications for alterations to the NRA noise guidelines.

  3. GaP/Si heterojunction Solar Cells

    SciTech Connect (OSTI)

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  4. Distributed bragg reflector using AIGaN/GaN

    DOE Patents [OSTI]

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  5. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  6. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  7. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect (OSTI)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  8. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  9. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  10. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  11. Biofuel Facts for the Road: The Energy Department and Your Gasoline Pump |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Biofuel Facts for the Road: The Energy Department and Your Gasoline Pump Biofuel Facts for the Road: The Energy Department and Your Gasoline Pump November 24, 2015 - 11:05am Addthis Biofuel Facts for the Road: The Energy Department and Your Gasoline Pump The “Contains 10% ethanol” label means that ethanol has been blended into the petroleum gasoline—10% ethanol and 90% petroleum gasoline. The "Contains 10% ethanol" label means that ethanol has

  12. Fact #625: May 31, 2010 Distribution of Trucks by On-Road Vehicle Weight |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 5: May 31, 2010 Distribution of Trucks by On-Road Vehicle Weight Fact #625: May 31, 2010 Distribution of Trucks by On-Road Vehicle Weight According to weigh-in-motion data collected by fifteen states, the majority of 5-axle tractor-trailers on the road weigh between 33,000 and 73,000 lbs.Eleven percent of the tractor-trailers had weight recorded around 72,800 lbs and 10% around 68,300 lbs. Another 10% of tractor-trailers were on the lighter end of the scale - around

  13. Technologies for a Sustainable Heavy-Duty On-Road Fleet | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Technologies for a Sustainable Heavy-Duty On-Road Fleet Technologies for a Sustainable Heavy-Duty On-Road Fleet Only selected energy pathways for the heavy-duty on-road fleet are consistent with the joint objectives of reducing petroleum dependence and mitigating climate change deer09_baker.pdf (75.19 KB) More Documents & Publications 21st Century Truck Partnership Roadmap Roadmap and Technical White Papers - 21CTP-0003, December 2006 The Need to Reduce Mobile Source Emissions in

  14. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  15. fe0013961-GaTech | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Performer Georgia Tech Research Corporation, Atlanta GA 30332 Background While earlier research focused on the properties of the hydrate mass per se (Sloan Jr and Koh 2007), ...

  16. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  17. Atomic structure of defects in GaN:Mg grown with Ga polarity

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

    2003-11-25

    Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {l_brace}11{und 2}3{r_brace} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 {+-} 0.2{angstrom} displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base.

  18. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  19. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  20. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  1. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

    SciTech Connect (OSTI)

    Kasanaboina, Pavan Kumar; Ahmad, Estiak; Li, Jia; Iyer, Shanthi; Reynolds, C. Lewis; Liu, Yang

    2015-09-07

    Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region.

  2. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  3. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  4. On-Road Particle Matter Emissions from a MY 2010 Compliant HD...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Measuring particle emissions from a 2010 compliant HD Diesel tractor while traveling on-road for 2300 miles found average gravimetric TPM over the entire route to be well below ...

  5. EA-1184: Transfer of the DP Road Tract to the County of Los Alamos, New Mexico

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts for the proposal to transfer ownership of the undeveloped DP Road Property from the U.S. Department of Energy to Los Alamos County, New Mexico.

  6. 454 Sequencing: The road to the Future ( 7th Annual SFAF Meeting, 2012)

    ScienceCinema (OSTI)

    Knight, James R [Roche

    2013-03-22

    Jim Knight on "454 Sequencing: The Road to the Future" at the 2012 Sequencing, Finishing, Analysis in the Future Meeting held June 5-7, 2012 in Santa Fe, New Mexico.

  7. On-Road Development of the C-Gas Plus Engine in Heavy-Duty Vehicles

    SciTech Connect (OSTI)

    Not Available

    2003-06-01

    Fact sheet details on-road development of C-Gas Plus natural gas engine in Viking Freight heavy-duty trucks, including emissions, fuel costs, and petroleum displacement.

  8. USVI Energy Road Map: Charting the Course to a Clean Energy Future...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    USVI Energy Road Map Charting the Course to a Clean Energy Future EDIN Energy Development in Island Nations U.S. Virgin Islands EDIN Energy Development in Island Nations U.S. ...

  9. Analysis Reveals Impact of Road Grade on Vehicle Energy Use (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2014-04-01

    Findings of study indicate that, on average, road grade could be responsible for 1%-3% of fuel use in light-duty automobiles, with many individual trips impacted by as much as 40%.

  10. Idaho Site Achieves Successful Nuclear Shipment on Newly Constructed Haul Road

    Office of Energy Efficiency and Renewable Energy (EERE)

    IDAHO FALLS, Idaho – Close coordination among operations, security and transportation teams at the Idaho site helped ensure the recent success of the first nuclear shipment on a newly constructed haul road.

  11. Microsoft Word - Class 1 S Access Road-031611 FINAL.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mr. Bearzi: Enclosed is a Class 1 Permit Modification Notification to: * Add South Access Road for Transportation of TRU Mixed Waste We certify under penalty of law that this...

  12. EA-1941: Boyer-Tillamook Access Road Improvement Project, Tillamook and Yamhill Counties, Oregon

    Broader source: Energy.gov [DOE]

    BPA prepared an EA, FONSI, and Mitigation Action Plan to assess the potential environmental impacts of proposed improvements to 13 miles of access roads for its existing 115-kV Boyer-Tillamook No. 1 Transmission Line in Tillamook and Yamhill counties, Oregon. Associated activities would include resurfacing roads, adding drainage, widening 3 miles of road, constructing 0.1 mile of new road, maintaining culverts, and constructing outlet ditches and retaining walls. In addition, new bridges would be built, and culverts that currently block fish passage for anadromous and resident fish would be replaced. Additional information is available at the project website: http://efw.bpa.gov/environmental_services/Document_Library/Boyer-Tillamook/.

  13. What Eco-Driving Techniques Do You Use on the Road?

    Broader source: Energy.gov [DOE]

    What eco-driving techniques do you use on the road? Simple measures such as observing the speed limit, planning your trips, and keeping your tires properly inflated can make a big difference in your savings.

  14. CNG in OKC: Improving Efficiency at the Pump and on the Road...

    Broader source: Energy.gov (indexed) [DOE]

    ... and on the Road Grand Junction's CNG station fuels the city's fleets and county buses and is available to fuel public vehicles as well. Pictured above, a Grand Valley Transit bus ...

  15. RCRA Facility Investigation/Remedial Investigation Report for the Grace Road Site (631-22G)

    SciTech Connect (OSTI)

    Palmer, E.

    1998-10-02

    This report summarizes the activities and documents the results of a Resource Conservation and Recovery Act Facility Investigation/Remedial Investigation conducted at Grace Road Site on the Savannah River Site near Aiken, South Carolina.

  16. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F. Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Synitsin, M. A.; Sizov, V. S.; Zakgeim, A. L.; Mizerov, M. N.

    2010-06-15

    A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

  17. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Paskova, T.; Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 ; Evans, K. R.; Leach, J.; Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 ; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  18. On-Road Use of Fischer-Tropsch Diesel Blends

    SciTech Connect (OSTI)

    Nigel Clark; Mridul Gautam; Donald Lyons; Chris Atkinson; Wenwei Xie; Paul Norton; Keith Vertin; Stephen Goguen; James Eberhardt

    1999-04-26

    Alternative compression ignition engine fuels are of interest both to reduce emissions and to reduce U.S. petroleum fuel demand. A Malaysian Fischer-Tropsch gas-to-liquid fuel was compared with California No.2 diesel by characterizing emissions from over the road Class 8 tractors with Caterpillar 3176 engines, using a chassis dynamometer and full scale dilution tunnel. The 5-Mile route was employed as the test schedule, with a test weight of 42,000 lb. Levels of oxides of nitrogen (NO{sub x}) were reduced by an average of 12% and particulate matter (PM) by 25% for the Fischer-Tropsch fuel over the California diesel fuel. Another distillate fuel produced catalytically from Fischer-Tropsch products originally derived from natural gas by Mossgas was also compared with 49-state No.2 diesel by characterizing emissions from Detroit Diesel 6V-92 powered transit buses, three of them equipped with catalytic converters and rebuilt engines, and three without. The CBD cycle was employed as the test schedule, with a test weight of 33,050 lb. For those buses with catalytic converters and rebuilt engines, NO x was reduced by 8% and PM was reduced by 31% on average, while for those buses without, NO x was reduced by 5% and PM was reduced by 20% on average. It is concluded that advanced compression ignition fuels from non-petroleum sources can offer environmental advantages in typical line haul and city transit applications.

  19. Road to Denver: Collegiate Startups Compete for $100,000 at Cleantech

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    University Prize National Competition | Department of Energy Road to Denver: Collegiate Startups Compete for $100,000 at Cleantech University Prize National Competition Road to Denver: Collegiate Startups Compete for $100,000 at Cleantech University Prize National Competition June 20, 2016 - 10:45am Addthis NovoMoto, winner of the Clean Energy Trust Challenge, has developed a MicroPlant technology that aims to provide renewable, sustainable electricity to communities in sub-Saharan Africa. |

  20. USVI Energy Road Map: Charting the Course to a Clean Energy Future

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    (Brochure), EDIN (Energy Development in Island Nations), U.S. Virgin Islands | Department of Energy USVI Energy Road Map: Charting the Course to a Clean Energy Future (Brochure), EDIN (Energy Development in Island Nations), U.S. Virgin Islands USVI Energy Road Map: Charting the Course to a Clean Energy Future (Brochure), EDIN (Energy Development in Island Nations), U.S. Virgin Islands This brochure provides an overview of the integrated clean energy deployment process and progress of the

  1. The Development and On-Road Performance and Durability of the Four-Way

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Emission Control SCRTTM System | Department of Energy The Development and On-Road Performance and Durability of the Four-Way Emission Control SCRTTM System The Development and On-Road Performance and Durability of the Four-Way Emission Control SCRTTM System 2003 DEER Conference Presentation: Johnson Matthey plc, Cummins Inc. 2003_deer_walker.pdf (535.28 KB) More Documents & Publications SCRT Technology for Retrofit of Heavy-Duty Diesel Applications Update on Diesel Exhaust Emission

  2. The Road to Improved Heavy Duty Fuel Economy | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    The Road to Improved Heavy Duty Fuel Economy The Road to Improved Heavy Duty Fuel Economy Heavy duty diesel engine fuel economy is improved by lowering the viscosity of engine lubricant, especially when engine speed is increased or load is decreased, as in long distance on-highway driving deer10_miller.pdf (2.25 MB) More Documents & Publications Development of High Performance Heavy Duty Engine Oils Technical Demonstration of 2010 Emissions Regulations over Transient Operation Lubricants -

  3. Road to Fuel Savings: Clean Diesel Trucks Gain Momentum with Nissan and

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Cummins Collaboration | Department of Energy Road to Fuel Savings: Clean Diesel Trucks Gain Momentum with Nissan and Cummins Collaboration Road to Fuel Savings: Clean Diesel Trucks Gain Momentum with Nissan and Cummins Collaboration August 28, 2014 - 9:51am Addthis Pictured here is a clean diesel engine for light trucks that was part of Cummins research and development effort from 1997-2004. Supported with funding by the Energy Department, this engine is as clean and quiet as a gasoline

  4. The Digital Road to Scientific Knowledge Diffusion; A Faster, Better Way to

    Office of Scientific and Technical Information (OSTI)

    Scientific Progress? (Journal Article) | SciTech Connect Journal Article: The Digital Road to Scientific Knowledge Diffusion; A Faster, Better Way to Scientific Progress? Citation Details In-Document Search Title: The Digital Road to Scientific Knowledge Diffusion; A Faster, Better Way to Scientific Progress? With the United States federal government spending billions annually for research and development, ways to increase the productivity of that research can have a significant return on

  5. New, stricter Pajarito Road access rules to go into effect Aug. 12

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New, stricter Pajarito Road access rules New, stricter Pajarito Road access rules to go into effect Aug. 12 Laboratory personnel and subcontractors will no longer be able to "vouch" for non-Laboratory personnel such as family members. July 16, 2013 Los Alamos National Laboratory sits on top of a once-remote mesa in northern New Mexico with the Jemez mountains as a backdrop to research and innovation covering multi-disciplines from bioscience, sustainable energy sources, to plasma

  6. The Road to Hydrogen--Challenges Ahead in Technology and Manufacturing |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy The Road to Hydrogen--Challenges Ahead in Technology and Manufacturing The Road to Hydrogen--Challenges Ahead in Technology and Manufacturing Presentation prepared by Rick Zalesky for the 2005 Hydrogen Manufacturing R&D Workshop. mfg_wkshp_industry.pdf (679.85 KB) More Documents & Publications Distributed Hydrogen Production from Natural Gas: Independent Review Panel Report Hydrogen Pathways: Cost, Well-to-Wheels Energy Use, and Emissions for the Current

  7. Road Map for Development of Crystal-Tolerant High Level Waste Glasses

    SciTech Connect (OSTI)

    Matyas, Josef; Vienna, John D.; Peeler, David; Fox, Kevin; Herman, Connie; Kruger, Albert A.

    2014-05-31

    This road map guides the research and development for formulation and processing of crystal-tolerant glasses, identifying near- and long-term activities that need to be completed over the period from 2014 to 2019. The primary objective is to maximize waste loading for Hanford waste glasses without jeopardizing melter operation by crystal accumulation in the melter or melter discharge riser. The potential applicability to the Savannah River Site (SRS) Defense Waste Processing Facility (DWPF) is also addressed in this road map.

  8. ChemCam follows the 'Yellowknife Road' to Martian wet area

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    'Yellowknife Road' to martian wet area ChemCam follows the 'Yellowknife Road' to martian wet area Researchers have tracked a trail of minerals that point to the prior presence of water at the Curiosity rover site on Mars. January 15, 2013 The Mars Science Laboratory's Curiosity Rover recently took this photo of the Martian landscape looking toward Mount Sharp while on its way toward Yellowknife Bay-an area where researchers have found minerals indicating the past presence of water. (NASA Photo)

  9. American Road: Clean Diesels for the Real World | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    American Road: Clean Diesels for the Real World American Road: Clean Diesels for the Real World Perspectives on clean diesels and public policy as it is developing in the US, as compared to EU deer08_mcmahon.pdf (934.03 KB) More Documents & Publications Opportunity Assessment Clean Diesels in the North American Light Duty Market Why Light Duty Diesels Make Sense in the North American Market BMW Diesel - Engine Concepts for Efficient Dynamics

  10. Amped Up! Volume 1, No. 5: EERE Innovation on the Road Through Paris |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy 5: EERE Innovation on the Road Through Paris Amped Up! Volume 1, No. 5: EERE Innovation on the Road Through Paris Clean Energy Technologies: Wind Clean Energy Technologies: Wind Energy Department investments in new wind turbine technologies and performance are increasing America's reliance on wind power to provide safe, clean, domestic energy. Clean Energy Technologies: Solar Clean Energy Technologies: Solar Solar energy innovations at the Energy Department have