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Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Lamar Dodd School of Art 270 River Road Athens, GA 30602 GRADUATE ASSISTANTSHIP APPLICATION  

E-Print Network [OSTI]

Lamar Dodd School of Art 270 River Road Athens, GA 30602 GRADUATE ASSISTANTSHIP BELOW: (1) I am currently enrolled in the Lamar Dodd School of Art ____________ degree program in the ____________________ area. (2) I have been officially accepted for admission to the Lamar Dodd School of Art

Arnold, Jonathan

2

E-Print Network 3.0 - athens ga usa Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Chen, V... . Northrup Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304 ... Source: Feenstra, Randall - Department of Physics, Carnegie...

3

Graduate School Enjoy Athens!  

E-Print Network [OSTI]

Dean Graduate School Enjoy Athens! Great schools Affordable housing Eclectic dining Entertainment of the Graduate School. The University of Georgia (UGA), a land-grant/sea-grant university, is the largest schools and colleges, as well as a medical partnership with Georgia Regents University housed on the UGA

Arnold, Jonathan

4

Major Degree Campus Accounting B.B.A. Athens  

E-Print Network [OSTI]

Major Degree Campus Accounting B.B.A. Athens Accounting M.Acc. Athens Adult Education Ed.D. Athens Adult Education Ed.S. Athens Adult Education M.Ed. Athens Adult Education Ph.D. Athens Adult Education Ed.D. Gwinnett Adult Education M.Ed. Online Advertising A.B.J. Athens African American Studies A

Arnold, Jonathan

5

Lamar Dodd School of Art Enjoy Athens!  

E-Print Network [OSTI]

Director Lamar Dodd School of Art Enjoy Athens! Great schools Affordable housing Eclectic dining and nominations for the position of Director, Lamar Dodd School of Art. Founded in 1937, the School has 50 full, and the Performing Arts Center. Additional information about the Lamar Dodd School of Art is available at: http

Hall, Daniel

6

athens area greece: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Greece C. Bekas, IBM, Zurich, Switzerland P. Chaviaropoulos, Center For Renewable Energy Sources (CRES), Greece V. Dougalis, Univ. Athens & IACMFORTH, Greece D. Fotiadis,...

7

Democracy: Power to the People Athens and America  

E-Print Network [OSTI]

Democracy: Power to the People Athens and America Saturday, April 20, 2013 We offer this workshop. Athens was the first to develop a democracy as we understand it, and, when "power goes to the people," what obligations fall upon "the people" and individual citizens? We will examine this question

Humphrey, Marty

8

Athens-Clarke County- Green Business Revolving Loan Fund  

Broader source: Energy.gov [DOE]

Athens-Clarke County has created a Green Business Revolving Loan Fund for new or existing businesses. Funding is available for implementing eco-friendly products or services into a business or...

9

Distributed road assessment system  

DOE Patents [OSTI]

A system that detects damage on or below the surface of a paved structure or pavement is provided. A distributed road assessment system includes road assessment pods and a road assessment server. Each road assessment pod includes a ground-penetrating radar antenna array and a detection system that detects road damage from the return signals as the vehicle on which the pod is mounted travels down a road. Each road assessment pod transmits to the road assessment server occurrence information describing each occurrence of road damage that is newly detected on a current scan of a road. The road assessment server maintains a road damage database of occurrence information describing the previously detected occurrences of road damage. After the road assessment server receives occurrence information for newly detected occurrences of road damage for a portion of a road, the road assessment server determines which newly detected occurrences correspond to which previously detected occurrences of road damage.

Beer, N. Reginald; Paglieroni, David W

2014-03-25T23:59:59.000Z

10

E-Print Network 3.0 - athens tandem accelerator Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

results for: athens tandem accelerator Page: << < 1 2 3 4 5 > >> 1 Workshop on Thermonuclear Reaction Rates for Astrophysics Applications Summary: , particle physics, neutrino...

11

ASHLAND ROAD COLLEGE AVENUE  

E-Print Network [OSTI]

ASHLAND ROAD N COLLEGE AVENUE RESIDENCE HALLS ROLLINS GROUP RESIDENCE HALLS DOBBS GROUP RESIDENCE ASHLAND ROAD OUTERROAD COLLEGE AVENUE RESIDENCE HALLS ROLLINS GROUP RESIDENCE HALLS DOBBS GROUP RESIDENCE

Taylor, Jerry

12

East Avenue Truck Inspection Patterson Pass Road Vasco Road  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Vasco Road Thunderbird Lane Greenville Road Greenville Road Directions to the SandiaCA - Visitor Badge Office Interstate 580 - OaklandSan Francisco, Traveling Eastbound * Exit...

13

A Road Accident  

E-Print Network [OSTI]

tracks (include description/relationship if appropriate) NA Title of track A Road Accident Translation of title Description (to be used in archive entry) Shel ko shares his experience of a serious road accident in which the truck he...

G.yu lha

14

Forest Roads (Minnesota)  

Broader source: Energy.gov [DOE]

Proposed forest roads must be approved and designated by the Commissioner of the Department of Natural Resources.

15

Scott Stadium Stadium Road  

E-Print Network [OSTI]

Scott Stadium Stadium Road Residence Hereford College Alderman Road Residence Area Aquatic Increase Service to the Corner I0 750 1,500375 Feet Coordinate System: NAD 1983 StatePlane Virginia South 2: 36.7667 Latitude Of Origin: 36.3333 Units: Foot US #12;Scott Stadium Stadium Road Residence

Acton, Scott

16

Popular urban settlements in Athens : a comparative study of low income housing  

E-Print Network [OSTI]

This study is concerned with aspects of housing and urban development related to the lower income groups in the context of urbanization in Athens, Greece. It identifies and evaluates typical low income housing settlements ...

Kitsiou, Triada

1981-01-01T23:59:59.000Z

17

athens greece 20-22: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

IBSC27WP IX-3 Athens, 23-27 May 2005 LINKING HORIZONTAL AND VERTICAL MODELS TO PREDICT 3D + time DISTRIBUTIONS OF BIRD DENSITIES Judy Shamoun-Baranes1 , Henk Sierdsema. Royal...

18

Forest Road Building Regulations  

Broader source: Energy.gov [DOE]

The Wisconsin Department of Natural Resources has regulations for building a forest road, if development requires one. Regulations include zoning ordinances and permits for stream crossing, grading...

19

Haul road dust control  

SciTech Connect (OSTI)

A field study was conducted to measure dust from haul trucks at a limestone quarry and a coal preparation plant waste hauling operation. The study found that primarily wind, distance and road treatment conditions notably affected the dust concentrations at locations next to, 50 ft from, and 100 ft away from the unpaved haulage road. Airborne dust measured along the unpaved haul road showed that high concentrations of fugitive dust can be generated with these concentrations rapidly decreasing to nearly background levels within 100 ft of the road. Instantaneous respirable dust measurements illustrated that the trucks generate a real-time dust cloud that has a peak concentration with a time-related decay rate as the dust moves past the sampling locations. The respirable dust concentrations and peak levels were notably diminished as the dust cloud was transported, diluted, and diffused by the wind over the 100 ft distance from the road. Individual truck concentrations and peak levels measured next to the dry road surface test section were quite variable and dependent on wind conditions, particularly wind direction, with respect to reaching the sampling location. The vast majority of the fugitive airborne dust generated from unpaved and untreated haulage roads was non-respirable. 6 figs.

Reed, W.R.; Organiscak, J.A. [NIOSH-PRL, Pittsburgh, PA (United States)

2007-10-15T23:59:59.000Z

20

Rapid road repair vehicle  

DOE Patents [OSTI]

Disclosed is a rapid road repair vehicle capable of moving over a surface to be repaired at near normal posted traffic speeds to scan for and find an the high rate of speed, imperfections in the pavement surface, prepare the surface imperfection for repair by air pressure and vacuum cleaning, applying a correct amount of the correct patching material to effect the repair, smooth the resulting repaired surface, and catalog the location and quality of the repairs for maintenance records of the road surface. The rapid road repair vehicle can repair surface imperfections at lower cost, improved quality, at a higher rate of speed than was was heretofor possible, with significantly reduced exposure to safety and health hazards associated with this kind of road repair activities in the past.

Mara, Leo M. (Livermore, CA)

1998-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Associations Between Management Forecast Accuracy and Pricing of IPOs in Athens Stock  

E-Print Network [OSTI]

1 Associations Between Management Forecast Accuracy and Pricing of IPOs in Athens Stock Exchange Dimitrios Gounopoulos* University of Surrey, U.K. This study examines the earnings forecast accuracy earnings forecast and pricing ofIPOs. It uses a unique data set of 208 IPOs, which were floated during

Jensen, Max

22

Great Social Scene: Athens is home to a thriving local music scene that has produced  

E-Print Network [OSTI]

Activities: Athens and the surrounding area are home to Bulldog, Intramural and county sports teams, climbing. Bioinformatics provides the frame- work and tools to mine and analyze the avalanche of data that is emerging from nearly every life science discipline including crop genomics, biofuels, cancer, ecology, human health

Arnold, Jonathan

23

THE NEW MULTICHANNEL RADIOSPECTROGRAPH ARTEMIS-IV/HECATE, OF THE UNIVERSITY OF ATHENS  

E-Print Network [OSTI]

THE NEW MULTICHANNEL RADIOSPECTROGRAPH ARTEMIS-IV/HECATE, OF THE UNIVERSITY OF ATHENS C. CAROUBALOS@cc.uoa.gr (Received 14 April 2000; accepted in revised form 5 February 2001) Abstract. We present the new solar shocks, the acceleration of energetic particles from shock waves, and the relation of energetic electrons

Athens, University of

24

MSc STUDY PROGRAMME IN THE FACULTY OF GEOLOGY AND GEOENVIRONMENT, UNIVERSITY OF ATHENS 201314 Geology and Geoenvironment  

E-Print Network [OSTI]

MSc STUDY PROGRAMME IN THE FACULTY OF GEOLOGY AND GEOENVIRONMENT, UNIVERSITY OF ATHENS 201314 1 Geology and Geoenvironment MSc Programme STUDENT HANDBOOK Applied Environmental Geology, Stratigraphy Paleontology, Geography and Environment, Dynamic Geology and Tectonics/ Hydrogeology, Geophysics

Kouroupetroglou, Georgios

25

Rapid road repair vehicle  

DOE Patents [OSTI]

Disclosed are improvments to a rapid road repair vehicle comprising an improved cleaning device arrangement, two dispensing arrays for filling defects more rapidly and efficiently, an array of pre-heaters to heat the road way surface in order to help the repair material better bond to the repaired surface, a means for detecting, measuring, and computing the number, location and volume of each of the detected surface imperfection, and a computer means schema for controlling the operation of the plurality of vehicle subsystems. The improved vehicle is, therefore, better able to perform its intended function of filling surface imperfections while moving over those surfaces at near normal traffic speeds.

Mara, Leo M. (Livermore, CA)

1999-01-01T23:59:59.000Z

26

The Bumpy Road to Hydrogen  

E-Print Network [OSTI]

It appears to us that hydrogen is a highly promising option06—16 The Bumpy Road to Hydrogen Daniel Sperling Joan OgdenThe Bumpy Road to Hydrogen 1 Daniel Sperling and Joan Ogden

Sperling, Dan; Ogden, Joan M

2006-01-01T23:59:59.000Z

27

New Construction Road Closures  

E-Print Network [OSTI]

New Construction Remodel Utility Road Closures 11 Keiss 12 Keiss 13 Stoddard 14 Stoddard Scott? Martha Coleman: 491-0101 Colorado State University - Fall 2013 Major Construction BRT Mason Corridor Facilitites Management Haberecht Haberecht Construction Work Zones 13 12 14 21 23 22 32 Æa #12;

28

ADEC II Universal SCR Retrofit System for On-road and Off-road...  

Broader source: Energy.gov (indexed) [DOE]

ADEC II Universal SCR Retrofit System for On-road and Off-road Diesel Engines ADEC II Universal SCR Retrofit System for On-road and Off-road Diesel Engines Presentation given at...

29

Road to Net Zero (Presentation)  

SciTech Connect (OSTI)

A PowerPoint presentation on NREL's Research Support Facility (RSF) and the road to achieving net zero energy for new construction.

Glover, B.

2011-05-01T23:59:59.000Z

30

Sally Johnson 123 Bakers Road  

E-Print Network [OSTI]

Sally Johnson 123 Bakers Road Nashville, TN 37212 203-333-4444 Sally.johnson@vanderbilt.edu Leslie. Sincerely, (signature) Sally Johnson #12;

Bordenstein, Seth

31

Better haul roads speed operations  

SciTech Connect (OSTI)

Modern trucks and scrapers are manufactured to standards of increasingly larger size and degree of sophistication, and to get the greatest return in productivity it is necessary to have good haul roads. Good haul roads can reduce fuel consumption, increase vehicle speed, reduce wear and tear on machinery, and improve safety. The paper describes aspects of haul road maintenance, including levelling and repairing of the surface, reducing rolling resistance, super-elevating curves, eliminating reverse curves and controlling dust. The design of haul roads is also covered.

Not Available

1982-03-01T23:59:59.000Z

32

M. I. Finley's 'Studies in Land and Credit in Ancient Athens' Reconsidered  

E-Print Network [OSTI]

City-States’. This remarkable document has been preserved in the ‘Heichelheim Dossier’. It is effectively in seven parts: (i) a preamble, explaining the thinking behind the proposal; (ii) a detailed listing of proposed contents; (iii) an outline of a... -contradictory, on the face of it.’ As early as 1942, J.V.A. Fine, Professor of Greek History at Princeton, had been approached by his colleague Benjamin Meritt, representing the American School in Athens, and by Anthony Raubitschek to edit and publish those horoi...

Millett, Paul

2013-10-30T23:59:59.000Z

33

Forisk Consulting Forisk Consulting LLC PO Box 5070 Athens, GA 30604 770.725.8447 hclark@forisk.com  

E-Print Network [OSTI]

to timber markets, wood bioenergy, and forest operations. Our experience and interests focus on better@forisk.com Date: July 2013 Re: Market Analyst About Forisk Consulting Forisk conducts applied research related in the forest industry, wood bioenergy and timberland investing sectors. Forisk specializes in analyzing

Mazzotti, Frank

34

EWEC 2006, Athens, The Anemos Wind Power Forecasting Platform Technology The Anemos Wind Power Forecasting Platform Technology -  

E-Print Network [OSTI]

EWEC 2006, Athens, The Anemos Wind Power Forecasting Platform Technology 1 The Anemos Wind Power a professional, flexible platform for operating wind power prediction models, laying the main focus on state models from all over Europe are able to work on this platform. Keywords: wind energy, wind power

Boyer, Edmond

35

International Conference on Experiments/Process/System Modeling/Simulation/Optimization Athens, 6-9 July, 2011  

E-Print Network [OSTI]

-EpsMs0 Athens, 6-9 July, 2011 © IC-EpsMsO NUMERICAL SIMULATION IN VERTICAL WIND AXIS TURBINE WITH PITCH turbine (HAWTs) and vertical-axis wind turbine (VAWTs)The present study concerns a small VAWT technology.simonet@ensam.eu Keywords: numerical simulation, performance coefficient, unsteady simulation, VAWT, vertical axis, wind

Paris-Sud XI, Université de

36

OA mandate of the MTA -Athens, Oct. 18, 2013 -Holl A. 1 OA mandate of the Hungarian Academy of  

E-Print Network [OSTI]

support mechanism: help-desk, administrator network, trainings, materials, Author Addendum ­ technical help: SWORD upload #12;OA mandate of the MTA - Athens, Oct. 18, 2013 - Holl A. 6 Needed: ­ MTA requested consultation/training.) In the framework of SIM4RDM monitoring tool will be developed. OA

Holl, András

37

The Australasian College of Road Safety Road Safety 2020: Smart Solutions, Sustainability, Vision, Conference Proceedings, 5-6 November 2009  

E-Print Network [OSTI]

The Australasian College of Road Safety Road Safety 2020: Smart Solutions, Sustainability, Vision Solutions, Sustainability, Vision The Australasian College of Road Safety Conference, Perth, Western Australia : Australia (2009)" #12;The Australasian College of Road Safety Road Safety 2020: Smart Solutions

Paris-Sud XI, Université de

38

CHESTNUT RIDGE RD VALLEY ROAD  

E-Print Network [OSTI]

SIGN TO: OAK RIDGE, Y-12,AND KNOXVILLE CHESTNUT RIDGE ROAD FIRSTSTREET 95 95 HFIR and SNS Sites #12;SNS PARKING CNMS PARKING COVERED BRIDGE 8310 87008910 8913 8911 8100 8330 CHESTNUT RIDGE RD TO

39

RESTRICTED ACCESS to Groat Road  

E-Print Network [OSTI]

AveUniversity Ave University Ave South Ave 80 Ave 82 Ave Braithwaite Park North Saskatchewan River Mc Ave Edinboro Road Saskatchewan Drive Saskatchewan Drive Saskatchewan Drive 88 Corbett Field West

MacMillan, Andrew

40

Murdoch University Dixon Road, Rockingham  

E-Print Network [OSTI]

Murdoch University Dixon Road, Rockingham Western Australia 6168 Email: info in Desalination Australia holds a diverse portfolio of 43 research projects, spanning five, and on microbial populations in seawater. Forward osmosis as a low energy and high efficiency pre

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

ADEC II Universal SCR Retrofit System for On-road and Off-road...  

Broader source: Energy.gov (indexed) [DOE]

ADEC II Universal SCR Retrofit System for On-road and Off-road Diesel Engines Richard Carlson Extengine Transport Systems, LLC Fullerton, California 2006 DEER Conference Poster...

42

Mn/DOT County Road Safety Plans  

E-Print Network [OSTI]

Roads Program !! Minnesota Central Safety Funds !! Foster safety culture among county stakeholders 41 Mn/DOT County Road Safety Plans CTS Annual Research Conference April 27 & 28, 2010 Howard Preston & Objectives !! Project Overview !! Schedule, Participating Counties, Approach !! Safety Emphasis Areas

Minnesota, University of

43

Shaftesbury Road Site The Edinburgh Building  

E-Print Network [OSTI]

Shaftesbury Road Site The Edinburgh Building Shaftesbury Road, Cambridge CB2 8RU, UK Phone +44 (0@cambridge.org www.cambridge.org/casscentre Cambridge City Centre The Pitt Building Trumpington Street, Cambridge CB2.cambridge.org/bookshop By car Visitor parking is available on the Shaftesbury Road site. If visiting the pitt Building

Mackenzie, Kirill

44

ROAD-MAN-LANDSCAPE -IN THEORY ASB155 Road-man-landscape -in theory  

E-Print Network [OSTI]

and environmental requirements. Innehåll: Course content: New roads in the landscape. Conversion concepts in traffic planning, road construction, landscape architecture, urban architecture, planning for masters (graduate) students of engineering, architecture and landscape architecture, and future planners

45

ROAD-MAN-LANDSCAPE -DESIGNPROJECT ASB150 Road-man-landscape -designproject  

E-Print Network [OSTI]

, landscape and environmental requirements. Innehåll: Course content: New roads in the landscape. Conversion concepts in traffic planning, road construction, landscape architecture, urban architecture, planning (graduate) students of engineering, architecture and landscape architecture, and future planners

46

Global Roads Global Roads Open Access Data Set, Version 1 (gROADSv1): South America  

E-Print Network [OSTI]

0 1,000 Km Global Roads Global Roads Open Access Data Set, Version 1 (gROADSv1): South America South America Lambert Conformal Conic Projection Data source: Center for International Earth Science

Columbia University

47

Virginia Natural Gas's Hampton Roads Pipeline Crossing  

Broader source: Energy.gov [DOE]

Presentation—given at the Federal Utility Partnership Working Group (FUPWG) Fall 2008 meeting—covers Virginia Natural Gas's (VNG's) pipeline project at Hampton Roads Crossing (HRX).

48

ENERGY STRATEGY: THE ROAD NOT TAKEN?  

E-Print Network [OSTI]

ENERGY STRATEGY: THE ROAD NOT TAKEN? By Amory B. Lovins Two road5 diverged in a wood, and I-- I are America's formal or de facto energy policies leading us? Where might we choose to go instead? How can we concepts in energy strategy by outlining and contrasting two en- ergy paths tbat the United States might

Kammen, Daniel M.

49

Safety Considerations When Driving on Rural Roads  

E-Print Network [OSTI]

procedures to follow. Characteristics of rural or forest roads Extra caution is required when driving-moving vehicles, animals, debris) · Unusually steep hills or sharp curves Since help may often be difficult.Agricultural or prescribed forest burning may produce smoke on roads. Hazard: Approaching vehicles, livestock or wild animals

Vivoni, Enrique R.

50

published in Proc. Int. Conf. Parallel Architectures and Languages, Athens, July, 1994 Lecture Notes in Computer Science, Vol. 817, SpringerVerlag, Berlin, 1994, pp. 313322  

E-Print Network [OSTI]

published in Proc. Int. Conf. Parallel Architectures and Languages, Athens, July, 1994 Lecture Notes in Computer Science, Vol. 817, Springer­Verlag, Berlin, 1994, pp. 313­322 Run­Time Optimization. Szymanski Department of Computer Science, Rensselaer Polytechnic Institute Troy, New York 12180­3590 USA

Bystroff, Chris

51

Canadian Solar Road Panel Design: A Structural and Environmental Analysis.  

E-Print Network [OSTI]

??Solar road panels are a technology that have the ability to revolutionize the way that roads are built and how electricity is generated. Strong incentives… (more)

Northmore, Andrew

2014-01-01T23:59:59.000Z

52

Electricity for road transport, flexible power systems and wind...  

Open Energy Info (EERE)

Electricity for road transport, flexible power systems and wind power (Smart Grid Project) Jump to: navigation, search Project Name Electricity for road transport, flexible power...

53

Microsoft Word - CX-Ross-Lexington_access_road_WEB.doc  

Broader source: Energy.gov (indexed) [DOE]

Darin Bowman Project Manager - TELF-TPP-3 Proposed Action: Access road repair including reconstructing, grading, and shaping of roads, placing and compacting of rock surfacing,...

54

E-Print Network 3.0 - access roads Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Collection: Computer Technologies and Information Sciences 64 Colorado Forest Road Field Handbook Summary: . . . . . . . . . . . . 3 Road Access . . . . . . . . . . . . . . . . ....

55

A quadratic algorithm for road coloring  

E-Print Network [OSTI]

The road coloring theorem states that every aperiodic directed graph with constant out-degree has a synchronized coloring. This theorem had been conjectured during many years as the road coloring problem before being settled by A. Trahtman. Trahtman's proof leads to an algorithm that finds a synchronized labeling with a cubic worst-case time complexity. We show a variant of his construction with a worst-case complexity which is quadratic in time and linear in space. We also extend the road coloring theorem to the periodic case.

Béal, Marie-Pierre

2008-01-01T23:59:59.000Z

56

On-road remote sensing of vehicle emissions in  

E-Print Network [OSTI]

On-road remote sensing of vehicle emissions in the Auckland Region August 2003 Technical 1877353000 www.arc.govt.nz #12;TP 198 On-Road Remote Sensing of Vehicle Emissions in the Auckland Region #12;Page i TP 198 On-Road Remote Sensing of Vehicle Emissions in the Auckland Region On-road remote sensing

Denver, University of

57

The Political Economy of Private Roads David Levinson  

E-Print Network [OSTI]

to the generating plants in the electricity sector. What are not private, of course, are the roads them- selves4 The Political Economy of Private Roads David Levinson CosaNostra Pizza #3569 is on Vista Road in road privatization and alternative financing, not just by science fiction writ- ers, anarchists

Levinson, David M.

58

HCEI Road Map: 2011 Edition (Brochure)  

SciTech Connect (OSTI)

This road map outlines the 2011 key goals and strategies of the Hawaii Clean Energy Initiative, was founded based on a Memorandum of Understanding between the State of Hawaii and the U.S. Department of Energy in 2008.

Braccio, R.; Finch, P.

2011-08-01T23:59:59.000Z

59

Ga nanoparticle-enhanced photoluminescence of GaAs  

SciTech Connect (OSTI)

We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-09-02T23:59:59.000Z

60

AlGaN/GaN-based power semiconductor switches  

E-Print Network [OSTI]

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Optimal Economic Selection of Road Design Standards for Timber Harvesting  

E-Print Network [OSTI]

with uniform conditions of road construction is to be accessed by truck road for timber harvest. A discrete when constructed to a given standard and used for timber haul depends fundamentally on the volume the entire length of the road even as haul volumes change are developed. Examples are given. FOR. SCI. 43

Greulich, Francis E.

62

ORIGINAL PAPER Wild Turkey (Meleagris gallopavo) association to roads  

E-Print Network [OSTI]

ORIGINAL PAPER Wild Turkey (Meleagris gallopavo) association to roads: implications for distance roads. Our objective was to determine if and when Rio Grande wild turkeys (Meleagris gallopavo gallopavo intermedia . Rio Grande wild turkey. Roads . Texas Communicated by H. Kierdorf D. R. Erxleben :M

Wallace, Mark C.

63

WP1 Climate services for road  

E-Print Network [OSTI]

WP1 Climate services for road authorities Janette Bessembinder et al. #12;2 A1: review, analysis and assessment of existing climate change projections regarding TEN-T needs A2: Development of a common methodology for the production of regional climate projections to provide consistent input data for risk

Haak, Hein

64

Finance forum.........................2 LTAP Roads Scholars.............3  

E-Print Network [OSTI]

· Finance forum.........................2 · LTAP Roads Scholars.............3 · CTS Executive on page 3 Value capture continued on page 2 Current funding and finance mechanisms for transportation face completed research project led by CTS. "The project provides new financing meth- ods that are not currently

Minnesota, University of

65

"MBUF Demo" "Mn Road Fee Test"  

E-Print Network [OSTI]

(40 mpg) Electric Vehicle (non-gas powered) State Tax * Federal Tax ** State Tax * Federal Tax"MBUF Demo" "Mn Road Fee Test" "IntelliDrive Connected Vehicles for Safety, Mobility and User Fee Overview Six Months In-Vehicle Data Collection Participant Recruited Equipment Deployed First Odometer

Minnesota, University of

66

Estimating Vehicle Miles Traveled on Local Roads  

E-Print Network [OSTI]

in social science and we relate it to traffic volumes. We demonstrate that VMT on local roads exhibits a scale-free property: it follows two piecewise (double) power law distributions. In other words, the total local VMT can be obtained by properly...

Qian, Jiayu

2013-11-07T23:59:59.000Z

67

ASSESSING CAUSAL FACTORS IN INDIVIDUAL ROAD ACCIDENTS  

E-Print Network [OSTI]

ASSESSING CAUSAL FACTORS IN INDIVIDUAL ROAD ACCIDENTS: COLLECTIVE RESPONSIBILITY IN FREEWAY REAR accident report: Happened on I-94 in downtown Minneapolis Happened during the afternoon peak period Vehicle" is a "condition or event" such that "had the condition or event been prevented...the accident would not occur

Minnesota, University of

68

A road map for implementing systems engineering  

SciTech Connect (OSTI)

Studies by academia, industry, and government indicate that applying a sound systems engineering process to development programs is an important tool for preventing cost and schedule overruns and performance deficiencies. There is an enormous body of systems engineering knowledge. Where does one start? How can the principles of systems engineering be applied in the Sandia environment? This road map is intended to be an aid to answering these questions.

Dean, F.F. [Sandia National Labs., Albuquerque, NM (United States). New Mexico Weapons Systems Engineering Center; Bentz, B.; Bahill, A.T. [Univ. of Arizona, Tucson, AZ (United States)

1997-02-01T23:59:59.000Z

69

05-GA50002-68  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a seat belt. Drive within the speed limit andor appropriate road conditions. Only use a cell phone when vehicle is parked in a safe location, or device is in hands-free mode. *...

70

Investigation of the GaN-on-GaAs interface for vertical power device applications  

SciTech Connect (OSTI)

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2014-07-07T23:59:59.000Z

71

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

72

approach roads: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The Data Science Institute at Columbia University strives to be the single world Columbia University 8 ROADS Grant Provost Ignition Funding Opportunity "Research Opportunities and...

73

Climate policies for road transport revisited (I): Evaluation...  

Open Energy Info (EERE)

of the current framework Jump to: navigation, search Tool Summary LAUNCH TOOL Name: Climate policies for road transport revisited (I): Evaluation of the current framework...

74

Boyer-Tillamook Access Road Improvement Project 1 Finding of...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

dangerous. In addition, improvements to access road stream crossings would facilitate fish passage. Construction is expected to last from 2 to 4 months, although work may need to...

75

Contracts & Grants Enjoy Athens!  

E-Print Network [OSTI]

-award accounting functions; · maintenance of the University's Cost Accounting Standards Disclosure Statement (DS-2 of related campus policies, business processes, and operating procedures; and · sub-recipient monitoring Statement (DS-2) and related policies and procedures. The Director will lead in the effort to provide

Kissinger, Jessica

76

Hampton Roads Demonstration Project | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision hasInformation Earth's Heat Jump to:Photon Place:Net JumpStrategy |Hammerfest Strom UK co ownedRoads

77

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets  

SciTech Connect (OSTI)

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

2013-08-19T23:59:59.000Z

78

Road traffic accidents in Kathmandu¿an hour of education yields a glimmer of hope  

E-Print Network [OSTI]

et al. : Road traffic accidents in Kathmandu— an hour ofOpen Access Road traffic accidents in Kathmandu—an hour ofnumber of road traffic accidents in the year 2012 decreased

Basnet, Bibhusan; Vohra, Rais; Bhandari, Amit; Pandey, Subash

2013-01-01T23:59:59.000Z

79

A Decade of On-road Emissions Measurements  

E-Print Network [OSTI]

A Decade of On-road Emissions Measurements G A R Y A . B I S H O P * A N D D O N A L D H . S T E D. A multiyear, on-road emission measurement program carried outinthecitiesofChicago,Illinois;Denver,Colorado;LosAngeles (LA), California; and Phoenix, Arizona shows large, fuel- specific tailpipe emissions reductions

Denver, University of

80

13th Annual Transportation Engineering and Road Research Alliance (TERRA)  

E-Print Network [OSTI]

13th Annual Sponsor: Transportation Engineering and Road Research Alliance (TERRA) Cosponsors: Minnesota Department of Transportation (Mn/DOT) Minnesota Local Technical Assistance Program (LTAP Association State Aid for Local Transportation, Mn/DOT Minnesota Local Road Research Board (LRRB) Pavement

Minnesota, University of

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Optimal Resurfacing Decisions for Road Maintenance: A POMDP Perspective  

E-Print Network [OSTI]

. Numerical examples have shown that our model provides a preventive maintenance policy that slows downOptimal Resurfacing Decisions for Road Maintenance: A POMDP Perspective Mariem Zouch, Thomas Yeung / IRCCyN, F-44307 NANTES Cedex, France Keywords: Road deterioration, maintenance optimization, Partially

Boyer, Edmond

82

Introduction Fossil fuel combustion by aviation, shipping and road  

E-Print Network [OSTI]

fifth of the total global anthropogenic emissions of CO2. These emissions are growing more rapidly than to global CO emissions are estimated to be much smaller, likely due to more efficient fuel combustion. Road96 Introduction Fossil fuel combustion by aviation, shipping and road traffic contributes about one

Haak, Hein

83

Lessons Learned from Failures Involving Geofoam in Roads and Embankments  

E-Print Network [OSTI]

Lessons Learned from Failures Involving Geofoam in Roads and Embankments Manhattan College Research July 1999) #12;Lessons Learned from Failures Involving Geofoam in Roads and Embankments Manhattan College Research Report No. CE/GE-99-1 ii This page intentionally left blank. #12;Lessons Learned from

Horvath, John S.

84

MINNESOTA ROAD FEE TEST MILEAGE BASED USER FEE RATE  

E-Print Network [OSTI]

Policy Center Oregon Road User Fee Pilot Program Other Interest: Nevada, Texas, Ohio, Idaho, etc. May Cellular Tower Data Warehouse May 24, 2012 6 #12;Determination of Mileage Fees · MBUF Rate StructureMINNESOTA ROAD FEE TEST MILEAGE BASED USER FEE RATE STRUCTURE CONCEPT 23rd Annual Transportation

Minnesota, University of

85

Predictability of road traffic and congestion in urban areas  

E-Print Network [OSTI]

Mitigating traffic congestion on urban roads, with paramount importance in urban development and reduction of energy consumption and air pollution, depends on our ability to foresee road usage and traffic conditions pertaining to the collective behavior of drivers, raising a significant question: to what degree is road traffic predictable in urban areas? Here we rely on the precise records of daily vehicle mobility based on GPS positioning device installed in taxis to uncover the potential daily predictability of urban traffic patterns. Using the mapping from the degree of congestion on roads into a time series of symbols and measuring its entropy, we find a relatively high daily predictability of traffic conditions despite the absence of any a priori knowledge of drivers' origins and destinations and quite different travel patterns between weekdays and weekends. Moreover, we find a counterintuitive dependence of the predictability on travel speed: the road segment associated with intermediate average travel ...

Wang, Jingyuan; Li, Jing; Li, Chao; Xiong, Zhang; Wang, Wen-Xu

2014-01-01T23:59:59.000Z

86

E-Print Network 3.0 - access roads rehabilitation Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Station - Flagstaff Lab Collection: Environmental Sciences and Ecology 15 University of Kings Edwards Summary: . Bournbrook Road The road will be closed to vehicular traffic...

87

E-Print Network 3.0 - automatic road extraction Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

with no tuning, as well as extracting the road midline using residual... and watershed image processing techniques to extract a road network in the vicinity of the vehicle,...

88

The Private Provision of Frontier Infrastructure: Toll Roads in California, 1850-1902  

E-Print Network [OSTI]

and Gold Run (1867), Weaverville and Minersville (1863), andwho controlled the Weaverville & Shasta Wagon Road and thea large interest in the Weaverville & Minersville Toll Road.

Klein, Daniel B.; Yin, Chi

1994-01-01T23:59:59.000Z

89
90

Savannah River Site 1991 Road Erosion Inventory.  

SciTech Connect (OSTI)

Final Report. USDA Forest Service, Savannah River, Aiken, SC. 28 pp. Abstract - This paper explains the rationale and results of a 1991 road erosion inventory conducted by members of the USDA Forest Service – Savannah River (FS-SR) and USDA Natural Resources Conservation Service (NRCS). The inventory provided information for the Department of Energy - Savannah River (DOE-SR) to justify the need for developing an erosion and sediment control program with appropriate funding, personnel, and equipment. Federally managed since the early 1950’s, the SRS is located on 198,344 acres (80,301 hectares) in the South Carolina counties of Aiken, Barnwell, and Allendale. Located along the eastern border of the Savannah River, the SRS is located within the Upper and Lower Coastal Plains of South Carolina.

Jones, Cliff.

2007-06-22T23:59:59.000Z

91

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

92

M.-T. DO, P. MARSAC, Y. DELANNE Prediction of Tire/Wet Road Friction from  

E-Print Network [OSTI]

M.-T. DO, P. MARSAC, Y. DELANNE 1 Prediction of Tire/Wet Road Friction from Road Surface, validation of a contact model for the prediction of low-speed friction from road surface microtexture the friction ­ speed curve from road- and tire measurable parameters. The model development is briefly

Paris-Sud XI, Université de

93

2009 Voluntary Protection Programs Participants' Association (VPPPA) Presentation: Follow The Yellow Brick Road to Safety  

Broader source: Energy.gov [DOE]

2009 Voluntary Protection Programs Participants' Association (VPPPA) Presentation: Follow The Yellow Brick Road to Safety

94

Distributing Urea for the On-Road Vehicle Market  

Broader source: Energy.gov (indexed) [DOE]

Urea for the On-Road Vehicle Market Estimated Urea Consumption Several Light- and Heavy-Duty EngineVehicle Manufacturers Have Selected SCR as Their NOx Control Strategy *...

95

State of roads : public works as research, India circa 1960  

E-Print Network [OSTI]

That the road is a symbol of the prowess of the nation-state seems tautological, a uni"ed phenomenon of political symbolism that manifests as an infrastructural network. When subjected to a close historical examination, ...

Khorakiwala, Ateya A

2009-01-01T23:59:59.000Z

96

One Woman's Road to Recovery | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

19, 2010 - 6:04pm Addthis One Woman's Road to Recovery Jo Napolitano Media Specialist, Argonne National Laboratory Editor's Note: Cross-posted from Argonne National Lab's Portraits...

97

Science Education on the Road: 2013 Princeton University Community...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Science Education on the Road: 2013 Princeton University Community and Staff Day October 12, 2013 Gallery: It was a beautiful autumn day in Princeton, NJ. As tailgaters got ready...

98

Linear Road : benchmarking stream-based data management systems  

E-Print Network [OSTI]

This thesis describes the design, implementation, and execution of the Linear Road benchmark for stream-based data management systems. The motivation for benchmarking and the selection of the benchmark application are ...

Tibbetts, Richard S. (Richard Singleton), 1979-

2003-01-01T23:59:59.000Z

99

New priorities for old roads : re-thinking roadway preservation  

E-Print Network [OSTI]

Most of the roads built over the last century in the US were built assuming that efficient mobility for drivers was most important without considering impacts to the natural or built environment. Urban neighborhoods were ...

Sylvester, Kathleen R. (Kathleen Rynn)

2009-01-01T23:59:59.000Z

100

Where the Rubber Meets the Road -- the Alternative Fuel Station...  

Broader source: Energy.gov (indexed) [DOE]

Road -- the Alternative Fuel Station Locator August 10, 2010 - 2:32pm Addthis Dennis A. Smith Director, National Clean Cities Last week, this blog highlighted the highly efficient...

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Global Energy Partners, LLC 500 Ygnacio Valley Road, Suite 450  

E-Print Network [OSTI]

Global Energy Partners, LLC 500 Ygnacio Valley Road, Suite 450 Walnut Creek, CA 94596 P: 925. This report was prepared by Global Energy Partners, LLC 500 Ygnacio Valley Blvd., Suite 450 Walnut Creek, CA

102

Road Transportable Analytical Laboratory system. Phase 1  

SciTech Connect (OSTI)

This developmental effort clearly shows that a Road Transportable Analytical Laboratory System is a worthwhile and achievable goal. The RTAL is designed to fully analyze (radioanalytes, and organic and inorganic chemical analytes) 20 samples per day at the highest levels of quality assurance and quality control. It dramatically reduces the turnaround time for environmental sample analysis from 45 days (at a central commercial laboratory) to 1 day. At the same time each RTAL system will save the DOE over $12 million per year in sample analysis costs compared to the costs at a central commercial laboratory. If RTAL systems were used at the eight largest DOE facilities (at Hanford, Savannah River, Fernald, Oak Ridge, Idaho, Rocky Flats, Los Alamos, and the Nevada Test Site), the annual savings would be $96,589,000. The DOE`s internal study of sample analysis needs projects 130,000 environmental samples requiring analysis in FY 1994, clearly supporting the need for the RTAL system. The cost and time savings achievable with the RTAL system will accelerate and improve the efficiency of cleanup and remediation operations throughout the DOE complex.

Finger, S.M.; Keith, V.F.; Spertzel, R.O.; De Avila, J.C.; O`Donnell, M.; Vann, R.L.

1993-09-01T23:59:59.000Z

103

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

104

GA Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:GA-Solar

105

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

106

Native point defects in GaSb  

SciTech Connect (OSTI)

We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J. [Department of Applied Physics, Aalto University School of Science, P.O. Box 14100, FI-00076 AALTO (Finland)

2014-10-14T23:59:59.000Z

107

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

108

Beta decay of Ga-62  

E-Print Network [OSTI]

from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

109

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

110

Lessons Learned from the Decommissioning of Nuclear Facilities and the Safe Termination of Nuclear Activities. Outcomes of the International Conference, 11-15 December 2006, Athens, Greece  

SciTech Connect (OSTI)

Full text of publication follows: decommissioning activities are increasing worldwide covering wide range of facilities - from nuclear power plant, through fuel cycle facilities to small laboratories. The importance of these activities is growing with the recognition of the need for ensuring safe termination of practices and reuse of sites for various purposes, including the development of new nuclear facilities. Decommissioning has been undertaken for more than forty years and significant knowledge has been accumulated and lessons have been learned. However the number of countries encountering decommissioning for the first time is increasing with the end of the lifetime of the facilities around the world, in particular in countries with small nuclear programmes (e.g. one research reactor) and limited human and financial resources. In order to facilitate the exchange of lessons learned and good practices between all Member States and to facilitate and improve safety of the planned, ongoing and future decommissioning projects, the IAEA in cooperation with the Nuclear Energy Agency to OECD, European Commission and World Nuclear Association organised the international conference on Lessons Learned from the Decommissioning of Nuclear Facilities and the Safe Termination of Nuclear Activities, held in Athens, Greece. The conference also highlighted areas where future cooperation at national and international level is required in order to improve decommissioning planning and safety during decommissioning and to facilitate decommissioning by selecting appropriate strategies and technologies for decontamination, dismantling and management of waste. These and other aspects discussed at the conference are presented in this paper, together with the planned IAEA measures for amendment and implementation of the International Action Plan on Decommissioning of Nuclear Facilities and its future programme on decommissioning.

Batandjieva, B.; Laraia, M. [International Atomic Energy Agency, Vienna (Austria)

2008-01-15T23:59:59.000Z

111

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents [OSTI]

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

112

The walled city : Beijing hybrid development plan in the 2nd ring road  

E-Print Network [OSTI]

The circular ring roads are one of the key elements that define the spatial organization of Beijing today. However, as the city continues to expand, the ring roads located in the inner city, combined with the gridded ...

Liang, Shaoyi

2014-01-01T23:59:59.000Z

113

E-Print Network 3.0 - air pollution ii--road Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ii--road Search Powered by Explorit Topic List Advanced Search Sample search results for: air pollution ii--road Page: << < 1 2 3 4 5 > >> 1 Air Pollution Physics and Chemistry EAS...

114

Kursplan fr lsret 2001/2002 ROAD-MAN-LANDSCAPE -DESIGNPROJECT ASB150  

E-Print Network [OSTI]

, landscape and environmental requirements. Innehåll: Course content: New roads in the landscape. Conversion concepts in traffic planning, road construction, landscape architecture, urban architecture, planning (graduate) students of engineering, architecture and landscape architecture, and future planners

115

Microsoft Word - PC-000580_0_NGNP Technology Road Mapping Report...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

lower reactor outlet helium temperature range. NGNP Technology Development Road Mapping Report PC-0005800 ix TABLE OF CONTENTS ACRONYMS ......

116

Road Haulage of Round Timber Code of Practice Forestry Commission Policy  

E-Print Network [OSTI]

Road Haulage of Round Timber Code of Practice Forestry Commission Policy It is Forest Enterprise and companies when they are operating on Forestry Commission land. The main road network in Forestry Commission. FC will be reviewing its policy with regard to the Road haulage of Round Timber Code of Practice

117

On-Road Remote Sensing of Automobile Emissions in the Denver Area: Year 6,  

E-Print Network [OSTI]

On-Road Remote Sensing of Automobile Emissions in the Denver Area: Year 6, January 2007 Gary A 80208 June 2007 #12;On-Road Remote Sensing of Automobile Emissions in the Denver Area: Year 6 1-Road Remote Sensing of Automobile Emissions in the Denver Area: Year 6 2 INTRODUCTION Many cities

Denver, University of

118

On-Road Remote Sensing of Automobile Emissions in the Phoenix Area: Year 2  

E-Print Network [OSTI]

On-Road Remote Sensing of Automobile Emissions in the Phoenix Area: Year 2 Sajal S. Pokharel, Gary Alpharetta, Georgia 30022 Contract No. E-23-4 #12;On-Road Remote Sensing of Automobile Emissions when the measurements were binned by model year. #12;On-Road Remote Sensing of Automobile Emissions

Denver, University of

119

On-Road Remote Sensing of Automobile Emissions in the Phoenix Area: Year 5,  

E-Print Network [OSTI]

On-Road Remote Sensing of Automobile Emissions in the Phoenix Area: Year 5, November 2004 Gary A, Suite 140 Alpharetta, Georgia 30022 Contract No. E-23-9 #12;On-Road Remote Sensing of Automobile campaigns.14 #12;On-Road Remote Sensing of Automobile Emissions in the Phoenix Area: Year 5 2 INTRODUCTION

Denver, University of

120

On-Road Remote Sensing of Automobile Emissions in the Phoenix Area: Year 3  

E-Print Network [OSTI]

On-Road Remote Sensing of Automobile Emissions in the Phoenix Area: Year 3 Sajal S. Pokharel, Gary Alpharetta, Georgia 30022 Contract No. E-23-4 #12;On-Road Remote Sensing of Automobile Emissions a slight negative dependence on #12;On-Road Remote Sensing of Automobile Emissions in the Phoenix Area

Denver, University of

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

On-Road Remote Sensing of Automobile Emissions in the Denver Area: Year 5,  

E-Print Network [OSTI]

On-Road Remote Sensing of Automobile Emissions in the Denver Area: Year 5, January 2005 Gary A, Suite 140 Alpharetta, Georgia 30022 Contract No. E-23-9 #12;On-Road Remote Sensing of Automobile campaigns.13 #12;On-Road Remote Sensing of Automobile Emissions in the Denver Area: Year 5 2 INTRODUCTION

Denver, University of

122

On-Road Remote Sensing of Automobile Emissions in the LaBrea Area: Year 2  

E-Print Network [OSTI]

On-Road Remote Sensing of Automobile Emissions in the LaBrea Area: Year 2 Mitchell J. Williams 140 Alpharetta, Georgia 30022 Contract No. E-23-4 #12;On-Road Remote Sensing of Automobile Emissions compared to the standard error of the mean measurements. #12;On-Road Remote Sensing of Automobile Emissions

Denver, University of

123

Insulators for cold urban areas: The problem of Road Salt Ravi Gorur and Sreeram Venkataraman  

E-Print Network [OSTI]

Insulators for cold urban areas: The problem of Road Salt Ravi Gorur and Sreeram Venkataraman of insulators in winter due to road salt. We have started a research project at Arizona State University are more concerned with the effect that the road salts have on insulators, both ceramic and composite

124

Going-to-the-Sun Road, Glacier National Park, MT, USA  

E-Print Network [OSTI]

Going-to-the-Sun Road, Glacier National Park, MT, USA Avalanche Path Atlas Erich H. Peitzsch Daniel..................................................................................................................................... 2 Overview of Red Rock Group avalanche paths, Going-to-the-Sun Road, Glacier National Park, MT................................................................................................................................................... 3 Overview of Lower GTSR group avalanche paths, Going-to-the-Sun Road, Glacier National Park, MT

125

Explaining the road accident risk: weather effects Ruth Bergel-Hayat1*  

E-Print Network [OSTI]

1 Explaining the road accident risk: weather effects Ruth Bergel-Hayat1* , Mohammed Debbarh1 conditions and road accident risk at an aggregate level and on a monthly basis, in order to improve road accidents. Time series analysis models with explanatory variables that measure the weather quantitatively

Paris-Sud XI, Université de

126

Road Map Team Proposal Form Proposal: P9  

E-Print Network [OSTI]

of state funding, but would be useful to the university and that align with its that may be conceived and require university funding. A process for winnowing University-wide and school/unit-based Road Map projects that have the potential

Suzuki, Masatsugu

127

On-Road Emission Measurements of Reactive Nitrogen Compounds from  

E-Print Network [OSTI]

, nitric oxide (NO), nitrogen dioxide (NO2), ammonia (NH3), and nitrous acid (HONO) produced by internalOn-Road Emission Measurements of Reactive Nitrogen Compounds from Three California Cities G A R Y measurements of reactive nitrogen compounds from light-duty vehicles. At the San Jose and wLA sites

Denver, University of

128

A ROAD MAP OF MOTIVIC HOMOTOPY AND HOMOLOGY THEORY  

E-Print Network [OSTI]

functors. Here is the main diagram, or road map. _______||h ____________ _______________|Spc to the Nisnevich topology on Sm=k, so the category Spc of "spaces" is just the category of Nisnevich sheaves on Sm CHARLES WEIBEL presheaf into a space, of course. In the category Spc , a smooth scheme X is th* *e

129

An Investigation of Optimal Vehicle Maneuvers for Different Road Conditions  

E-Print Network [OSTI]

vehicle maneuvers in time-critical situations have emerged as powerful tools during the past years. EvenAn Investigation of Optimal Vehicle Maneuvers for Different Road Conditions Bj¨orn Olofsson Lund, Sweden, firstname.lastname@control.lth.se. Department of Electrical Engineering, Link

130

On-Road Vehicle Detection Using Optical Sensors: A Review  

E-Print Network [OSTI]

1 On-Road Vehicle Detection Using Optical Sensors: A Review Zehang Sun1 , George Bebis2 and Ronald are expected to add up to 1%-3% of the world's gross domestic product [1]. With the aim of reducing injury

Bebis, George

131

Office of the General Counsel 777 Glades Road  

E-Print Network [OSTI]

Office of the General Counsel 777 Glades Road Boca Raton, FL 33431 tel: 561.297.3007 / fax: 561) communications intended to protect student, campus, or public safety. The Florida law is commonly interpreted be disclosed? Answer: In general, information derived from a student's education records may be disclosed only

Fernandez, Eduardo

132

Story Road Landfill Solar Site Evaluation: San Jose  

Broader source: Energy.gov [DOE]

This report describes the findings of a solar site evaluation conducted at the Story Road Landfill (Site) in the City of San Jose, California (City). This evaluation was conducted as part of a larger study to assess solar potential at multiple public facilities within the City.

133

Fuel-Based On-Road Motor Vehicle Emissions Inventory  

E-Print Network [OSTI]

Fuel-Based On-Road Motor Vehicle Emissions Inventory for the Denver Metropolitan Area Sajal S of Denver 2101 E. Wesley Ave. Denver, CO 80208 #12;Mobile Source Emissions Inventory Methods MOBILE emission factors -g/mile uncertain Vehicle miles traveled -very uncertain Speed correction factors Inventory

Denver, University of

134

The long and winding road of state building  

E-Print Network [OSTI]

Chapter 15 The long and winding road of state building Sagar Raj Sharma1 1. Context Post and services, including security. In this book, we have attempted to view state-building as essentially with various such aspects of state-building in today's post-conflict Nepal. The first two chapters have dealt

Richner, Heinz

135

Road to Recovery: Bringing Recovery to Small Town America  

ScienceCinema (OSTI)

The Recovery Act hits the road to reach out to surrounding towns of the Savannah River Site that are struggling with soaring unemployment rates. This project helps recruit thousands of people to new jobs in environmental cleanup at the Savannah River Site.

Nettamo, Paivi

2012-06-14T23:59:59.000Z

136

FOR341 Timber Harvesting and Forest Roads Spring 2009  

E-Print Network [OSTI]

Text: Water Quality BMPs (Best Management Practices) for Montana Forests Other readings as assigned management. Best management practices as they apply to forest operations in Montana and the western US, cost effectiveness, and environmental performance of forest road systems. · Upper Division Writing

Vonessen, Nikolaus

137

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect (OSTI)

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

138

Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs  

E-Print Network [OSTI]

AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

Gao, Feng, Ph. D. Massachusetts Institute of Technology

2014-01-01T23:59:59.000Z

139

Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA  

E-Print Network [OSTI]

Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

McGaughey, Alan

140

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network [OSTI]

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Boyer, Edmond

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

142

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

143

TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer  

SciTech Connect (OSTI)

It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

2008-01-01T23:59:59.000Z

144

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network [OSTI]

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

145

Characterization of road asphalt using Gel Permeation Chromatography  

E-Print Network [OSTI]

of research in the ares of asphalt chemistry. Brulh has proposed two theoretical extremes, a sol state and a gel state, to describe the condition of asphalts. In a sol state, asphaltene micelles are widely dispersed and do not interact a great deal. In a... December 1987 Major Subject: Chemical Engineering CHARACTERIZATION OF ROAD ASPHALT USING GEL PERMEATION CHROMATOGRAPHY A Thesis by GUY RANDAL DONALDSON Approved as to style and content by: Jerr A. Bullin hairm of Committee) Char e G. Glover...

Donaldson, Guy Randal

1987-01-01T23:59:59.000Z

146

Moose Wilson Road, Wyoming: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 -Energieprojekte3 Climate ZoneMontrose, Wisconsin: EnergyMoodyMoose Creek,Road,

147

Cross Roads, Texas: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentratingRenewable Solutions LLC Jump to:InformationCrandall,CriteriaCrookston WindRoads,

148

Cultural Resource Investigations for a Multipurpose Haul Road on the Idaho National Laboratory  

SciTech Connect (OSTI)

The U. S. Department of Energy, Idaho Operations Office is considering options for construction of a multipurpose haul road to transport materials and wastes between the Materials and Fuels Complex (MFC) and other Idaho National Laboratory (INL) Site facilities. The proposed road will be closed to the public and designed for limited year-round use. Two primary options are under consideration: a new route south of the existing T-25 power line road and an upgrade to road T-24. In the Spring of 2010, archaeological field surveys and initial coordination and field reconnaissance with representatives from the Shoshone-Bannock Tribes were completed to identify any resources that may be adversely affected by the proposed road construction and to develop recommendations to protect any listed or eligible for listing on the National Register of Historic Places. The investigations showed that 24 archaeological resources and one historic marker are located in the area of potential effects for road construction and operation south of the T-25 powerline road and 27archaeological resources are located in the area of potential effects for road construction and operation along road T-24. Generalized tribal concerns regarding protection of natural resources were also documented in both road corridors. This report outlines recommendations for additional investigations and protective measures that can be implemented to minimize adverse impacts to the identified resources.

Brenda R. Pace; Cameron Brizzee; Hollie Gilbert; Clayton Marler; Julie Braun Williams

2010-08-01T23:59:59.000Z

149

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

150

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

151

Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures  

SciTech Connect (OSTI)

In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

2014-01-13T23:59:59.000Z

152

Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire  

SciTech Connect (OSTI)

We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-08T23:59:59.000Z

153

Fuel Used for Off-Road Recreation: A Reassessment of the Fuel Use Model  

E-Print Network [OSTI]

Fuel Used for Off-Road Recreation: A Reassessment of the Fuel Use Model Stacy C. Davis Lorena F. Truett Patricia S. Hu #12;ORNL/TM-1999/100 Fuel Used for Off-Road Recreation: A Reassessment of the Fuel.S. Department of Energy under Contract No. DE-AC05-96OR22464 #12;#12;Fuel Used for Off-Road Recreation

154

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

155

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect (OSTI)

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

156

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect (OSTI)

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

157

Inventory and Sediment Modeling of Unpaved Roads for Stream Conservation Planning  

E-Print Network [OSTI]

for the Mapping and Inventory of Riparian Areas in the Upperstudy watershed using the road inventory geodatabase. Oncebe compared to species inventory data, stream bank erosion

Inlander, Ethan; Clingenpeel, Alan; Crump, Michael A.; Van Epps, Matthew; Formica, Sandi

2007-01-01T23:59:59.000Z

158

E-Print Network 3.0 - abuse road traffic Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Collection: Engineering ; Computer Technologies and Information Sciences 2 University of Kings Edwards Summary: month program this area of the Bristol Road will be subject to...

159

Microsoft Word - CX-Satsop-Aberdeen roads FY10_WEB.doc  

Broader source: Energy.gov (indexed) [DOE]

30, 2010 REPLY TO ATTN OF: KEP-4 SUBJECT: Environmental Clearance Memorandum Jim Semrau Project Manager - TELF-TPP-3 Proposed Action: Maintenance of access roads serving the...

160

USVI Energy Road Map: Charting the Course to a Clean Energy Future...  

Energy Savers [EERE]

upcoming milestones. edinusviroadmap.pdf More Documents & Publications USVI Energy Road Map: Charting the Course to a Clean Energy Future (Brochure), EDIN (Energy Development in...

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Archaeological investigations on the Buckboard Mesa Road Project  

SciTech Connect (OSTI)

In 1986, the Desert Research Institute (DRI) conducted an archaeological reconnaissance of a new alignment for the Buckboard Mesa Road on the Nevada Test Site for the Department of Energy (DOE). During this reconnaissance, several archaeological sites of National Register quality were discovered and recorded including a large quarry, site 26Ny4892, and a smaller lithic scatter, site 26Ny4894. Analysis of the debitage at 26Ny4892 indicates that this area was used primarily as a quarry for relatively small cobbles of obsidian found in the alluvium. Lithic reduction techniques used here are designed for efficiently reducing small pieces of toolstone and are oriented towards producing flake blanks from small cores and bifacially reducing exhausted cores. Projectile point cross references indicate that the area has seen at least casual use for about 10,000 years and more sustained use for the last 3,000 years. Initial obsidian hydration measurements indicate sustained use of the quarry for about the last 3,000 years although the loci of activities appear to change over time. Based on this study, the DRI recommends that quarrying activities in the area of 26Ny4892 are sufficiently sampled and that additional investigations into that aspect of prehistoric activity in the area are not necessary. This does not apply to other aspects of prehistoric use. DRI recommends that preconstruction surveys continue to identify nonquarrying, prehistoric utilization of the area. With the increased traffic on the Buckboard Mesa Road, there is a greater potential for vandalism to sites of National Register-quality located near the road. The DRI recommends that during the orientation briefing the workers at the Test Site be educated about the importance of cultural resources and the need for their protection. 202 refs., 41 figs., 52 tabs.

Amick, D.S.; Henton, G.H.; Pippin, L.C.

1991-10-01T23:59:59.000Z

162

Innovative technology summary report: Road Transportable Analytical Laboratory (RTAL)  

SciTech Connect (OSTI)

The Road Transportable Analytical Laboratory (RTAL) has been used in support of US Department of Energy (DOE) site and waste characterization and remediation planning at Fernald Environmental Management Project (FEMP) and is being considered for implementation at other DOE sites, including the Paducah Gaseous Diffusion Plant. The RTAL laboratory system consists of a set of individual laboratory modules deployable independently or as an interconnected group to meet each DOE site`s specific analysis needs. The prototype RTAL, deployed at FEMP Operable Unit 1 Waste Pits, has been designed to be synergistic with existing analytical laboratory capabilities, thereby reducing the occurrence of unplanned rush samples that are disruptive to efficient laboratory operations.

NONE

1998-10-01T23:59:59.000Z

163

Dillard Road Solar Power Facility | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address:011-DNA Jump to:52c8ff988c1Dering Harbor, NewRidge, Alaska:DickinsonDillard Road Solar

164

The Road to Hiroshima and Beyond | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion |Energy Usage »of EnergyThe Energy DepartmentCategory 2 NuclearThe Road to Hiroshima and

165

EV Everywhere Grand Challenge Road to Success | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Year in Review: TopEnergyIDIQ Contract ESPC IDIQ ContractConsumerof Energy ChargeRoad to

166

Marsh Road Power Plant Biomass Facility | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 - 429Lacey,(MonasterLowellis a town inRiver93. It isEnergyMarquette County isRoad

167

Bruceville Road Solar Power Facility | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORT Americium/CuriumSunways JV JumpBraselco JumpBruceville Road Solar

168

New Directions in Engines -- The Road Ahead | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion | Department ofT ib l L d F S i DOETowardExecutiveRateEnergy Emissions Control-- The Road

169

U.S. Virgin Islands Energy Road Map: Analysis  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion |Energy Usage »of EnergyTheTwo New Energy AmericanOfficeinGeothermal iii U.S.Energy Road

170

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network [OSTI]

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

171

InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall  

E-Print Network [OSTI]

°C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

Woodall, Jerry M.

172

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network [OSTI]

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

173

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

174

Radiological survey results at 4400 Piehl Road, Ottawa Lake, Michigan  

SciTech Connect (OSTI)

At the request of the US Department of Energy (DOE), a team from Oak Ridge National Laboratory conducted a radiological survey at 4400 Piehl Road in Ottawa Lake, Michigan. The survey was performed in September, 1992. The purpose of the survey was to determine if materials containing uranium from work performed under government contract at the former Baker Brothers facility in Toledo, Ohio had been transported off-site to this neighboring area. The radiological survey included surface gamma scans indoors and outdoors, alpha and beta scans inside the house and attached garage, beta-gamma scans of the hard surfaces outside, and the collection of soil, water, and dust samples for radionuclide analyses. Results of the survey demonstrated that the majority of the measurements on the property were within DOE guidelines. However, the presence of isolated spots of uranium contamination were found in two areas where materials were allegedly transported to the property from the former Baker Brothers site. Uranium uptake by persons on the property by ingestion is fairly unlikely, but inhalation is a possibility. Based on these findings, it is recommended that the residential property at 4400 Piehl Road in Ottawa Lake, Michigan be considered for inclusion under FUSRAP.

Foley, R.D.; Johnson, C.A.

1993-04-01T23:59:59.000Z

175

2011 Regents of the University of Minnesota. All rights reserved. The University of Minnesota is an equal opportunity educator and employer. Segments of roads with LSFs (right) have better driver visibility and road surface  

E-Print Network [OSTI]

is an equal opportunity educator and employer. Segments of roads with LSFs (right) have better driver improve driver visibility, road surface conditions and have the potential to reduce accidents, snow

Amin, S. Massoud

176

Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires  

SciTech Connect (OSTI)

The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

2014-10-14T23:59:59.000Z

177

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template  

SciTech Connect (OSTI)

We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2005-12-19T23:59:59.000Z

178

REGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based  

E-Print Network [OSTI]

the metal oxide varistor (MOV) and resistor (R) in a state-of-the-art surge protection circuit), metal oxide varistor (MOV), and transient voltage suppressor (TVS) diodes are the state-of-the- artREGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal­Semiconductor­Metal

Chow, Lee

179

Bumpy Road Ahead: Bracing for Insolvency in the Highway Trust Fund  

E-Print Network [OSTI]

. They recommend a congestion-adjusted vehicle mileage tax (VMT) as an economically efficient means of tackling infrastructure funding issues in a way that reflects the costs of road use. However, given the serious privacy issues associated with tracking road use...

Dar, Jawad; Taylor, Lori L.

180

Marginal costs of freeway traffic congestion with on-road pollution exposure externality  

E-Print Network [OSTI]

Traffic congestion On-road In-vehicle Pollution exposure Vehicle emissions a b s t r a c t The health cost improvements. When considering distinct vehicle classes, inclusion of on-road exposure costs greatly increases heavy-duty vehicle marginal costs because of their higher emissions rates and greater roadway capacity

Bertini, Robert L.

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

On-Road Remote Sensing of Automobile Emissions in the Phoenix Area: Year 4,  

E-Print Network [OSTI]

On-Road Remote Sensing of Automobile Emissions in the Phoenix Area: Year 4, November 2002 Gary A Sensing of Automobile Emissions in the Phoenix Area: Year 4 1 EXECUTIVE SUMMARY The University of Denver #12;On-Road Remote Sensing of Automobile Emissions in the Phoenix Area: Year 4 2 by 5 years

Denver, University of

182

Erosion at Decommissioned Road-Stream Crossings: Case Studies from Three  

E-Print Network [OSTI]

the dominant process and incorporate any lessons learned into future projects. Sites were also intentionally53 Erosion at Decommissioned Road-Stream Crossings: Case Studies from Three Northern California-treatment erosion was observed for 41 decommissioned road stream crossings in three northern California watersheds

Standiford, Richard B.

183

Impact of relief accuracy on flood simulations and road network vulnerability analysis  

E-Print Network [OSTI]

network by forcing users to take detours. In a risk preventive viewpoint, the network administrator has 1 Impact of relief accuracy on flood simulations and road network vulnerability analysis Jean in the water level and its consequences on the road network vulnerability. The first part focuses

Paris-Sud XI, Université de

184

Experiments for Online Estimation of Heavy Vehicle's Mass and Time-Varying Road Grade  

E-Print Network [OSTI]

's vehicle, and also marketing strategies in industry, has fuelled extensive research for automation of partExperiments for Online Estimation of Heavy Vehicle's Mass and Time-Varying Road Grade Ardalan for online estimation of Heavy Duty Vehicle mass and road grade. The test data is obtained from high- way

Stefanopoulou, Anna

185

Seymour Marine Discovery Center at Long Marine Lab 100 Shaffer Road * Santa Cruz, CA 95060  

E-Print Network [OSTI]

Seymour Marine Discovery Center at Long Marine Lab 100 Shaffer Road * Santa Cruz, CA 95060 (831) 459-3800 2014 Endowment Challenge to benefit Seymour Marine Discovery Center SANTA CRUZ, CA Discovery Center at Long Marine Lab 100 Shaffer Road * Santa Cruz, CA 95060 (831) 459-3800 Open

California at Santa Cruz, University of

186

Dynamic Friction Models for Longitudinal Road/Tire Interaction: Experimental Results  

E-Print Network [OSTI]

Dynamic Friction Models for Longitudinal Road/Tire Interaction: Experimental Results C. Canudas dynamic friction force model for the longitudinal road/tire interaction for wheeled ground vehicles is val- idated via experiments with an actual passenger vehicle. Contrary to common static friction/slip maps

Tsiotras, Panagiotis

187

Dynamic Friction Models for Longitudinal Road/Tire Interaction: Theoretical Advances  

E-Print Network [OSTI]

Dynamic Friction Models for Longitudinal Road/Tire Interaction: Theoretical Advances C. Canudas we derive a new dynamic friction force model for the longitudinal road/tire interaction for wheeled-point friction problems, called the LuGre model [1]. By assuming a con- tact patch between the tire

Tsiotras, Panagiotis

188

Conceptual design report, TWRS Privatization Phase I, site development and roads, subproject W-505  

SciTech Connect (OSTI)

This document includes Conceptual Design Report (CDR) for the site development, construction of new roads and improvements at existing road intersections, habitat mitigation, roadway lighting, and construction power needed for the construction of two Private Contractor (PC) Facilities. Approximately 50 hectare (124 acres) land parcel, east of the Grout Facility, is planned for the PC facilities.

Singh, G.

1997-06-05T23:59:59.000Z

189

Department of Ocean and Mechanical Engineering 777 Glades Road, Boca Raton, FL 33431  

E-Print Network [OSTI]

Department of Ocean and Mechanical Engineering 777 Glades Road, Boca Raton, FL 33431 561.297.3430, fax 561.297.3885 SeaTech ­ The Institute for Ocean & Systems Engineering 101 North Beach Road, Dania of Ocean and Mechanical Engineering at Florida Atlantic University is pleased to announce fellowship

Fernandez, Eduardo

190

A Hybrid macro-micro pedestrians evacuation model to speed up simulation in road networks  

E-Print Network [OSTI]

A Hybrid macro-micro pedestrians evacuation model to speed up simulation in road networks NGUYEN efficient than the use of micro model alone. Keywords: Crowd movement, Hybrid modeling, road networks, multi simulation in a dynamic environments are either based on micro or macro models. These two types of models

Paris-Sud XI, Université de

191

LASER SCANNING AND NOISE REDUCTION APPLIED TO 3D ROAD SURFACE ANALYSIS  

E-Print Network [OSTI]

LASER SCANNING AND NOISE REDUCTION APPLIED TO 3D ROAD SURFACE ANALYSIS Thorsten Schulz and Hilmar, EAWAG Email: michele.steiner@eawag.ch Abstract: Terrestrial laser scanning was applied to acquire 3D the catchment area of a road with respect to a pilot plant. As laser scanning requires only a few minutes

Giger, Christine

192

The role of hydrogen in powering road transport Alison Pridmore and Abigail Bristow  

E-Print Network [OSTI]

3.1 Greenhouse Gas Emissions From Hydrogen Powered Fuel Cell Vehicles ...9 3.2 Greenhouse GasThe role of hydrogen in powering road transport Alison Pridmore and Abigail Bristow April 2002 Tyndall Centre for Climate Change Research Working Paper 19 #12;The Role of Hydrogen in Powering Road

Watson, Andrew

193

ON-ROAD REMOTE SENSING OF VEHICLE EMISSIONS IN MONTERREY, N.L. MEXICO  

E-Print Network [OSTI]

ON-ROAD REMOTE SENSING OF VEHICLE EMISSIONS IN MONTERREY, N.L. MEXICO Final Report Prepared for the University of Denver traveled to Monterrey, N.L. Mexico to monitor remotely the carbon monoxide (CO with other cities that have been sampled in Mexico. The on-road emission averages are similar to the latest

Denver, University of

194

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

195

Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets  

SciTech Connect (OSTI)

We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

2014-09-21T23:59:59.000Z

196

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect (OSTI)

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

197

Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)  

SciTech Connect (OSTI)

GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

2013-12-02T23:59:59.000Z

198

Size-Resolved Particle Number and Volume Emission Factors for On-Road Gasoline and Diesel Motor Vehicles  

E-Print Network [OSTI]

matter from on-road gasoline and diesel vehicles.D.H. , Chase, R.E. , 1999b. Gasoline vehicle particle sizeFactors for On-Road Gasoline and Diesel Motor Vehicles

Ban-Weiss, George A.

2009-01-01T23:59:59.000Z

199

Quantum confinement in GaP nanoclusters  

SciTech Connect (OSTI)

We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

Laurich, B.K.; Smith, D.C.; Healy, M.D.

1994-06-01T23:59:59.000Z

200

A bottom up approach to on-road CO2 emissions estimates: improved spatial accuracy and applications for regional  

E-Print Network [OSTI]

A bottom up approach to on-road CO2 emissions estimates: improved spatial accuracy and applications Environment Environmental Science & Technology #12;1 A bottom up approach to on-road CO2 emissions estimates-road transportation is responsible for 28% of all U.S. fossil-fuel CO2 emissions. Mapping vehicle emissions

Wing, Ian Sue

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

202

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

203

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect (OSTI)

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

204

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots  

SciTech Connect (OSTI)

The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

2014-01-06T23:59:59.000Z

205

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

206

Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes  

SciTech Connect (OSTI)

We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

2013-12-04T23:59:59.000Z

207

On strongly GA-convex functions and stochastic processes  

SciTech Connect (OSTI)

In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

Bekar, Nurgül Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Günay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

2014-08-20T23:59:59.000Z

208

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network [OSTI]

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

209

Lessons learnt from post EIS evaluations of national road schemes in Ireland  

SciTech Connect (OSTI)

The Irish National Roads Authority (NRA) recently completed over twenty post environmental impact assessment evaluations of noise chapters prepared as part of Environmental Impact Statements (EISs) for new national road schemes in Ireland. The study focused on a range of issues including a review of noise monitoring procedures, noise prediction methodologies and an assessment of the effectiveness of noise mitigation measures currently in use on national road schemes. This review was carried out taking cognisance of best international practices for noise assessment and methodologies used to mitigate road traffic noise. The primary focus of the study was to assess the actual noise impacts of national road scheme developments and to revise, where necessary, methodologies recommended in the current NRA guidance document describing the treatment of noise on national road schemes. This paper presents a summary of the study and identifies a number of key areas that should be considered prior to the development of future guidance documents. - Highlights: Black-Right-Pointing-Pointer Presents a post-EIS evaluation of noise assessments for national roads in Ireland. Black-Right-Pointing-Pointer The effectiveness of some noise mitigation measures is critically evaluated. Black-Right-Pointing-Pointer Issues related to the current EIS noise assessment methodologies are discussed. Black-Right-Pointing-Pointer Implications for alterations to the NRA noise guidelines.

King, E.A., E-mail: kingea@tcd.ie [Department of Mechanical and Manufacturing Engineering, Parson's, Building, Trinity College, Dublin (Ireland); O'Malley, V.P. [National Roads Authority, St Martin's House, Waterloo Road, Dublin 4 (Ireland)

2012-01-15T23:59:59.000Z

210

Accurate characterization and improvement of GaAs microstrip attenuation  

E-Print Network [OSTI]

Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

Carroll, James Mason

2012-06-07T23:59:59.000Z

211

Height stabilization of GaSb/GaAs quantum dots by Al-rich capping  

SciTech Connect (OSTI)

GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-09-01T23:59:59.000Z

212

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates  

SciTech Connect (OSTI)

The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)

2013-05-07T23:59:59.000Z

213

Multiband GaNAsP Quaternary Alloys  

SciTech Connect (OSTI)

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

214

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network [OSTI]

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

215

AlGaAs/GaAs photovoltaic converters for high power narrowband radiation  

SciTech Connect (OSTI)

AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

2014-09-26T23:59:59.000Z

216

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

217

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect (OSTI)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

218

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect (OSTI)

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

219

Point defect balance in epitaxial GaSb  

SciTech Connect (OSTI)

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

2014-08-25T23:59:59.000Z

220

On-Road Particle Matter Emissions from a MY 2010 Compliant HD...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Particle Matter Emissions from a MY 2010 Compliant HD Diesel Vehicle Driving Across the U.S. On-Road Particle Matter Emissions from a MY 2010 Compliant HD Diesel Vehicle Driving...

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

RCRA Facility Investigation/Remedial Investigation Report for the Grace Road Site (631-22G)  

SciTech Connect (OSTI)

This report summarizes the activities and documents the results of a Resource Conservation and Recovery Act Facility Investigation/Remedial Investigation conducted at Grace Road Site on the Savannah River Site near Aiken, South Carolina.

Palmer, E.

1998-10-02T23:59:59.000Z

222

Drove roads: keystone structures that promote ant diversity in1 Mediterranean forest landscapes2  

E-Print Network [OSTI]

in Mediterranean forest environments, in addition to their importance as32 reservoirs of plant biodiversity grazing has led to the abandonment of transhumance and grazing uses of57 drove roads (Ruiz and Ruiz

Seoane, Javier

223

EA-1184: Transfer of the DP Road Tract to the County of Los Alamos, New Mexico  

Broader source: Energy.gov [DOE]

This EA evaluates the environmental impacts for the proposal to transfer ownership of the undeveloped DP Road Property from the U.S. Department of Energy to Los Alamos County, New Mexico.

224

An analysis of the current investment trend in the U.S. toll road sector  

E-Print Network [OSTI]

In recent years, long term concessions through public-private partnerships (PPP's) in the US toll road sector have emerged and are expected to become a phenomenon in the near future. Up until now, only two large scale ...

Zhang, Xin, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

225

Balancing people, place and the automobile : recommendations for the redesign of Belmont's Trapelo Road  

E-Print Network [OSTI]

This thesis presents a case study of the planning process for the redesign of Trapelo Road in Belmont, Massachusetts, a Boston suburb. The case is an on-going planning controversy that deals with a number of key issues ...

Carry, William J

2005-01-01T23:59:59.000Z

226

On-Road Remote Sensing of Automobile Emissions in the Los Angeles Area  

E-Print Network [OSTI]

On-Road Remote Sensing of Automobile Emissions in the Los Angeles Area: Year 1 Gary A. Bishop.1 According to Heywood2 , carbon monoxide emissions from automobiles are at a maximum when the air

Denver, University of

227

On-Road Remote Sensing of Automobile Emissions in the Denver Area: Year 1  

E-Print Network [OSTI]

On-Road Remote Sensing of Automobile Emissions in the Denver Area: Year 1 Peter J. Popp, Sajal S to Heywood,2 carbon monoxide emissions from automobiles are at a maximum when the air/fuel ratio is rich

Denver, University of

228

On-Road Remote Sensing of Automobile Emissions in the Chicago Area: Year 2  

E-Print Network [OSTI]

On-Road Remote Sensing of Automobile Emissions in the Chicago Area: Year 2 Peter J. Popp, Gary A from automobiles are at a maximum when the air/fuel ratio is rich of stoichiometric, and are caused

Denver, University of

229

On-Road Remote Sensing of Automobile Emissions in the Phoenix Area: Year 1  

E-Print Network [OSTI]

On-Road Remote Sensing of Automobile Emissions in the Phoenix Area: Year 1 Gary A. Bishop, Sajal S to the national emission inventory.1 According to Heywood2 , carbon monoxide emissions from automobiles

Denver, University of

230

On-Road Remote Sensing of Automobile Emissions in the Chicago Area: Year 1  

E-Print Network [OSTI]

On-Road Remote Sensing of Automobile Emissions in the Chicago Area: Year 1 Peter J. Popp, Gary A.1 Carbon monoxide emissions from automobiles are at a maximum when the air/fuel ratio is rich

Denver, University of

231

Toll road public-private partnerships in Malaysia : using the CLIOS process for policy improvements  

E-Print Network [OSTI]

Malaysia has relied on private sector provision of toll roads for over twenty years using public- private partnerships (PPPs). While the program has been successful in providing close to 1,800 kilometers of highway in that ...

Ward, John L., 1977-

2005-01-01T23:59:59.000Z

232

Multi-criteria analysis : an alternative approach for the evaluation of road pricing strategies  

E-Print Network [OSTI]

Interest in road pricing among political leaders, transportation analysts, academics, and government agencies has increased in recent years. There are myriad reasons for this newfound consideration, but the deployment of ...

Ensor, Jeffrey D. (Jeffrey Douglas)

2005-01-01T23:59:59.000Z

233

Daniel A. Goldstein 501 Campbell Hall #3411 1 Cyclotron Road MS 50B-4206  

E-Print Network [OSTI]

Daniel A. Goldstein 501 Campbell Hall #3411 1 Cyclotron Road MS 50B-4206 Department of Astronomy., Brown, P.J., Finley, D. A., Fischer, J., Goldstein, D., et al. DES13S2cmm: The First Superluminous

Backer, Don

234

Analysis Reveals Impact of Road Grade on Vehicle Energy Use (Fact Sheet)  

SciTech Connect (OSTI)

Findings of study indicate that, on average, road grade could be responsible for 1%-3% of fuel use in light-duty automobiles, with many individual trips impacted by as much as 40%.

Not Available

2014-04-01T23:59:59.000Z

235

Finding Multiple Lanes in Urban Road Networks with Vision and Lidar  

E-Print Network [OSTI]

This paper describes a system for detecting and estimating the properties of multiple travel lanes in an urban road network from calibrated video imagery and laser range data acquired by a moving vehicle. The system operates ...

Huang, Albert S.

236

Microsoft Word - CX-GrandCouleeDistrictWoodPoleReplacementsAccessRoads...  

Broader source: Energy.gov (indexed) [DOE]

7, 2013 REPLY TO ATTN OF: KEPR-Bell-1 SUBJECT: Environmental Clearance Memorandum Todd Wehner Civil DesignAccess Roads - TELF-TPP-3 James Semrau Project Manager - TEP-TPP-1...

237

Microsoft Word - CX-CentraliaAreaAccessRoadsFY13_WEB.doc  

Broader source: Energy.gov (indexed) [DOE]

Darin Bowman Project Manager TELF-TPP-3 Proposed Action: Access Road maintenance on the Chehalis-Centralia No. 1, Chehalis-Covington No. 1, Paul-Allston No. 2, and Paul-Napavine...

238

454 Sequencing: The road to the Future ( 7th Annual SFAF Meeting, 2012)  

ScienceCinema (OSTI)

Jim Knight on "454 Sequencing: The Road to the Future" at the 2012 Sequencing, Finishing, Analysis in the Future Meeting held June 5-7, 2012 in Santa Fe, New Mexico.

Knight, James R [Roche

2013-03-22T23:59:59.000Z

239

Inventory of Old Pine Nook Road Parcel on the Pocumtuck Ridge,  

E-Print Network [OSTI]

Inventory of Old Pine Nook Road Parcel on the Pocumtuck Ridge, Deerfield, MA Fletcher Clark Resources Inventory of Local Lands Class University of Massachusetts, Amherst Department of Environmental............................................................................................................13 7. Forestry Inventory

Schweik, Charles M.

240

Science on Saturday: January 31, 2015- The Road to a Sustainable...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

31, 2015 - 09:30 to 11:00 Science on Saturday: January 31, 2015- The Road to a Sustainable Energy Future Speaker: Professor Emily Carter, Department of Engineering; Director of the...

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

EA-1941: Boyer-Tillamook Access Road Improvement Project, Tillamook and Yamhill Counties, Oregon  

Broader source: Energy.gov [DOE]

BPA prepared an EA, FONSI, and Mitigation Action Plan to assess the potential environmental impacts of proposed improvements to 13 miles of access roads for its existing 115-kV Boyer-Tillamook No. 1 Transmission Line in Tillamook and Yamhill counties, Oregon. Associated activities would include resurfacing roads, adding drainage, widening 3 miles of road, constructing 0.1 mile of new road, maintaining culverts, and constructing outlet ditches and retaining walls. In addition, new bridges would be built, and culverts that currently block fish passage for anadromous and resident fish would be replaced. Additional information is available at the project website: http://efw.bpa.gov/environmental_services/Document_Library/Boyer-Tillamook/.

242

A quadratic algorithm for road coloring Marie-Pierre Beal and Dominique Perrin  

E-Print Network [OSTI]

A quadratic algorithm for road coloring Marie-Pierre B´eal and Dominique Perrin May 30, 2013, {beal,perrin}@univ-mlv.fr This work is supported by French National Agency (ANR) through "Programme d

Paris-Sud XI, Université de

243

Road Map for Development of Crystal-Tolerant High Level Waste Glasses  

SciTech Connect (OSTI)

This road map guides the research and development for formulation and processing of crystal-tolerant glasses, identifying near- and long-term activities that need to be completed over the period from 2014 to 2019. The primary objective is to maximize waste loading for Hanford waste glasses without jeopardizing melter operation by crystal accumulation in the melter or melter discharge riser. The potential applicability to the Savannah River Site (SRS) Defense Waste Processing Facility (DWPF) is also addressed in this road map.

Matyas, Josef; Vienna, John D.; Peeler, David; Fox, Kevin; Herman, Connie; Kruger, Albert A.

2014-05-31T23:59:59.000Z

244

Chaotic Vibration of a Quarter-Car Model Excited by the Road Surface Profile  

E-Print Network [OSTI]

The Melnikov criterion is used to examine a global homoclinic bifurcation and transition to chaos in the case of a quarter car model excited kinematically by the road surface profile. By analyzing the potential an analytic expression is found for the homoclinic orbit. By introducing an harmonic excitation term and damping as perturbations, the critical Melnikov amplitude of the road surface profile is found, above which the system can vibrate chaotically.

Grzegorz Litak; Marek Borowiec; Michael I. Friswell; Kazimierz Szabelski

2006-01-14T23:59:59.000Z

245

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents [OSTI]

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

246

On-Road Use of Fischer-Tropsch Diesel Blends  

SciTech Connect (OSTI)

Alternative compression ignition engine fuels are of interest both to reduce emissions and to reduce U.S. petroleum fuel demand. A Malaysian Fischer-Tropsch gas-to-liquid fuel was compared with California No.2 diesel by characterizing emissions from over the road Class 8 tractors with Caterpillar 3176 engines, using a chassis dynamometer and full scale dilution tunnel. The 5-Mile route was employed as the test schedule, with a test weight of 42,000 lb. Levels of oxides of nitrogen (NO{sub x}) were reduced by an average of 12% and particulate matter (PM) by 25% for the Fischer-Tropsch fuel over the California diesel fuel. Another distillate fuel produced catalytically from Fischer-Tropsch products originally derived from natural gas by Mossgas was also compared with 49-state No.2 diesel by characterizing emissions from Detroit Diesel 6V-92 powered transit buses, three of them equipped with catalytic converters and rebuilt engines, and three without. The CBD cycle was employed as the test schedule, with a test weight of 33,050 lb. For those buses with catalytic converters and rebuilt engines, NO x was reduced by 8% and PM was reduced by 31% on average, while for those buses without, NO x was reduced by 5% and PM was reduced by 20% on average. It is concluded that advanced compression ignition fuels from non-petroleum sources can offer environmental advantages in typical line haul and city transit applications.

Nigel Clark; Mridul Gautam; Donald Lyons; Chris Atkinson; Wenwei Xie; Paul Norton; Keith Vertin; Stephen Goguen; James Eberhardt

1999-04-26T23:59:59.000Z

247

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect (OSTI)

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16° from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

248

Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure  

SciTech Connect (OSTI)

Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.

Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13560-970 Sao Carlos, SP (Brazil)

2014-03-21T23:59:59.000Z

249

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

250

Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells  

SciTech Connect (OSTI)

In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-01-07T23:59:59.000Z

251

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

252

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect (OSTI)

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

253

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network [OSTI]

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

254

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect (OSTI)

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Néel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

255

Wavelength limits for InGaN quantum wells on GaN  

SciTech Connect (OSTI)

The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600?nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

Pristovsek, Markus, E-mail: markus@pristovsek.de [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

2013-06-17T23:59:59.000Z

256

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. (USDOE Idaho Field Office, Idaho Falls, ID (United States)); Koploy, M.A. (General Atomics, San Diego, CA (United States))

1992-01-01T23:59:59.000Z

257

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. [USDOE Idaho Field Office, Idaho Falls, ID (United States); Koploy, M.A. [General Atomics, San Diego, CA (United States)

1992-08-01T23:59:59.000Z

258

Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces  

SciTech Connect (OSTI)

We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-08-12T23:59:59.000Z

259

Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots  

SciTech Connect (OSTI)

In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg (Germany); Igusa, R.; Iwamoto, S.; Arakawa, Y. [University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-15T23:59:59.000Z

260

AlGaAs/GaAs quantum well infrared detectors and modulators  

E-Print Network [OSTI]

to the quantum well. This optical transition wavelength lies in the mid infrared region of the spectrum. To get a more realistic picture of the optical transition in a 1-D quantum well, the non-parabolicity of the conduction band of GaAs is taken... into consideration. Further it is seen that with the change in temperature and doping concentration the width and peak of the absorption curve also changes. Based on the above calculations and results an AIGaAs/GaAs quantum well infrared photodetector...

Dave, Digant Praful

1990-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Size-Resolved Particle Number and Volume Emission Factors for On-Road Gasoline and Diesel Motor Vehicles  

E-Print Network [OSTI]

losses when sampling diesel aerosol: A quality assurancefrom on-road gasoline and diesel vehicles. AtmosphericSource apportionment of diesel and spark ignition exhaust

Ban-Weiss, George A.

2009-01-01T23:59:59.000Z

262

Generating Pseudo-Random Permutations and Maximum Flow IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120 ,USA  

E-Print Network [OSTI]

of length r if there are i1 j1 r Center, 650 Harry Road, San Jose, CA 95120 ,USA and Sackler Faculty of Exact Sciences, Tel Aviv

Shamir, Ron

263

Microsoft Word - CX-Chemawa-Salem1and2-AccessRoads-FY13_WEB.doc  

Broader source: Energy.gov (indexed) [DOE]

September 27, 2013 REPLY TO ATTN OF: KEP-Alvey SUBJECT: Environmental Clearance Memorandum Steven Bailor Contractor - TELF-TPP-3 Proposed Action: Access road improvements on the...

264

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

265

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect (OSTI)

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

266

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network [OSTI]

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

267

O?[]O? nuclear ?-decay of ?²Ga  

E-Print Network [OSTI]

information, MARS was focused such that only fully stripped N=Z ions were passed, with the vast majority of them being Ga. The second phase of the experiment was a I3-y coincidence experiment. At the back-end of MARS, a 1" x 1 '!4" x 3" four..., using the Weinberg-Salam model of electroweak interactions, to be [23]: A& ? d, ?= ? [41n(mz/m )+ln(m /m?)+2K+A +" ]. (16) Here mz is the mass of the Z boson, me the proton mass, mx is the low energy cutoff for the second and third terms that arise...

Hyman, Bruce Carl

1999-01-01T23:59:59.000Z

268

General Atomics (GA) | Princeton Plasma Physics Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Region service area. TheEPSCIResearch to sponsorGeneral Atomics (GA)

269

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:

270

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect (OSTI)

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

271

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat  

E-Print Network [OSTI]

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

Shepelyansky, Dima

272

Impacts of the extended-weight coal haul road system. Final research report, December 1995  

SciTech Connect (OSTI)

The Extended-Weight Coal Haul Road System, created by the Kentucky Legislature in 1986, consists of all roads which carry over 50,000 tons of coal in a calendar year. Trucks hauling coal on this system are authorized to exceed normal weight limits through the payment of an annual decal fee. A research study was initiated in July of 1992 to analyze the impacts of the extended-weight system. Analyses in this report are based on the following: historical data on coal production and transportation: data from coal decal applications; interviews of legislators, transportation officials, coal company representatives, and coal trucking representatives; newspaper articles; vehicle classification data; analyses of pavement costs; pavement rideability data; and accident data. Primary conclusions include; (1) The extended-weight system has apparently been somewhat successful in accomplishing the objective of enhancing the competitiveness and economic viability of the Kentucky coal industry; (2) Overall accident rates did not increase as a result of implementation of the extended-weight system, but the fatal accident injury rates were significantly higher on the extended-weight system and for trucks operating with the coal decal; (3) Advance-warning flashers have been evaluated and recommended as a means of reducing intersection accidents involving heavy/coal trucks; (4) The coal-decal fee structure results in a net annual loss in Road Fund revenue of approximately $2 million; (5) Forty percent of revenue from decal fees are allocated to counties even though county-maintained roads comprise only eight percent of the extended-weight system; (6) Heavier weights of coal-decal trucks add approximately $9 million annually to the pavement overlay costs; (7) Road users throughout the state are subsidizing the movement of Kentucky coal by participating in the cost of maintaining and improving the highway system; and (8) Possibly reflecting the increased funding of extended-weight roads.

Pigman, J.; Crabtree, J.; Agent, K.; Graves, C.; Deacon, J.

1995-12-01T23:59:59.000Z

273

Road-corridor planning in the EIA procedure in Spain. A review of case studies  

SciTech Connect (OSTI)

The assessment of different alternatives in road-corridor planning must be based on a number of well-defined territorial variables that serve as decision making criteria, and this requires a high-quality preliminary environmental assessment study. In Spain the formal specifications for the technical requirements stipulate the constraints that must be considered in the early stages of defining road corridors, but not how they should be analyzed and ranked. As part of the feasibility study of a new road definition, the most common methodology is to establish different levels of Territorial Carrying Capacity (TCC) in the study area in order to summarize the territorial variables on thematic maps and to ease the tracing process of road-corridor layout alternatives. This paper explores the variables used in 22 road-construction projects conducted by the Ministry of Public Works that were subject to the Spanish EIA regulation and published between 2006 and 2008. The aim was to evaluate the quality of the methods applied and the homogeneity and suitability of the variables used for defining the TCC. The variables were clustered into physical, environmental, land-use and cultural constraints for the purpose of comparing the TCC values assigned in the studies reviewed. We found the average quality of the studies to be generally acceptable in terms of the justification of the methodology, the weighting and classification of the variables, and the creation of a synthesis map. Nevertheless, the methods for assessing the TCC are not sufficiently standardized; there is a lack of uniformity in the cartographic information sources and methodologies for the TCC valuation. -- Highlights: • We explore 22 road-corridor planning studies subjected to the Spanish EIA regulation. • We analyze the variables selected for defining territorial carrying capacity. • The quality of the studies is acceptable (methodology, variable weighting, mapping). • There is heterogeneity in the methods for territorial carrying capacity valuation.

Loro, Manuel, E-mail: manuel.loro@upm.es [Department of Urban and Regional Planning and Environment, Civil Engineering School, Universidad Politécnica de Madrid, Prof. Aranguren s/n, 28040 Madrid (Spain) [Department of Urban and Regional Planning and Environment, Civil Engineering School, Universidad Politécnica de Madrid, Prof. Aranguren s/n, 28040 Madrid (Spain); Transport Research Centre (TRANSyT-UPM) Universidad Politécnica de Madrid, ETSI Caminos, Canales y Puertos, Prof. Aranguren s/n, 28040 Madrid (Spain); Centro de investigación del transporte, TRANSyT-UPM, ETSI Caminos, Canales y Puertos, Universidad Politécnica de Madrid, Prof. Aranguren s/n, 28040 Madrid (Spain); Arce, Rosa M., E-mail: rosa.arce.ruiz@upm.es [Department of Urban and Regional Planning and Environment, Civil Engineering School, Universidad Politécnica de Madrid, Prof. Aranguren s/n, 28040 Madrid (Spain); Transport Research Centre (TRANSyT-UPM) Universidad Politécnica de Madrid, ETSI Caminos, Canales y Puertos, Prof. Aranguren s/n, 28040 Madrid (Spain); Centro de investigación del transporte, TRANSyT-UPM, ETSI Caminos, Canales y Puertos, Universidad Politécnica de Madrid, Prof. Aranguren s/n, 28040 Madrid (Spain); Ortega, Emilio, E-mail: e.ortega@upm.es [Transport Research Centre (TRANSyT-UPM) Universidad Politécnica de Madrid, ETSI Caminos, Canales y Puertos, Prof. Aranguren s/n, 28040 Madrid (Spain) [Transport Research Centre (TRANSyT-UPM) Universidad Politécnica de Madrid, ETSI Caminos, Canales y Puertos, Prof. Aranguren s/n, 28040 Madrid (Spain); Centro de investigación del transporte, TRANSyT-UPM, ETSI Caminos, Canales y Puertos, Universidad Politécnica de Madrid, Prof. Aranguren s/n, 28040 Madrid (Spain); Department of Construction and Rural Roads, Forestry Engineering School, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); and others

2014-01-15T23:59:59.000Z

274

libRoadRunner: A High Performance SBML Simulation and Analysis Library  

E-Print Network [OSTI]

This paper presents libRoadRunner, an extensible, high-performance, cross-platform, open-source software library for the simulation and analysis of models \\ expressed using Systems Biology Markup Language (SBML). SBML is the most widely used standard for representing dynamic networks, especially biochemical networks. libRoadRunner supports solution of both large models and multiple replicas of a single model on desktop, mobile and cluster computers. libRoadRunner is a self-contained library, able to run both as a component inside other tools via its C++ and C bindings andnteractively through its Python interface. The Python Application Programming Interface (API) is similar to the APIs of Matlab and SciPy, making it fast and easy to learn, even for new users. libRoadRunner uses a custom Just-In-Time (JIT) compiler built on the widely-used LLVM JIT compiler framework to compile SBML-specified models directly into very fast native machine code for a variety of processors, making it appropriate for solving very large models or multiple replicas of smaller models. libRoadRunner is flexible, supporting the bulk of the SBML specification (except for delay and nonlinear algebraic equations) and several of its extensions. It offers multiple deterministic and stochastic integrators, as well as tools for steady-state, stability analyses and flux balance analysis. We regularly update libRoadRunner binary distributions for Mac OS X, Linux and Windows and license them under Apache License Version 2.0. http://www.libroadrunner.org provides online documentation, full build instructions, binaries and a git source repository.

Endre T. Somogyi; Jean-Marie Bouteiller; James A. Glazier; Matthias König; Kyle Medley; Maciej H. Swat; Herbert M. Sauro

2015-03-03T23:59:59.000Z

275

Development of a Bulk GaN Growth Technique for Low Defect Density...  

Broader source: Energy.gov (indexed) [DOE]

current due to bulk defects GaN is Grown Heteroepitaxially on Sapphire (and Silicon Carbide) Substrates * As grown GaN nucleation layers contain disordered GaN with many...

276

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

277

ON-ROAD MOTOR VEHICLE EMISSIONS FROM AROUND THE WORLD Donald H. Stedman and Gary A. Bishop  

E-Print Network [OSTI]

ON-ROAD MOTOR VEHICLE EMISSIONS FROM AROUND THE WORLD Donald H. Stedman and Gary A. Bishop@du.edu ABSTRACT In 1993, on-road emissions in Continental Europe showed a pronounced South/North declining gradient for CO, HC and NO fuel specific emissions (gm/kg). Emissions in Hamburg and Rotterdam were

Denver, University of

278

Improvements in Terrain-Based Road Vehicle Localization By Initializing an Unscented Kalman Filter Using Particle Filters  

E-Print Network [OSTI]

the computational cost of the previous terrain- based localization algorithm. In order to localize a vehicle alongImprovements in Terrain-Based Road Vehicle Localization By Initializing an Unscented Kalman Filter of a road vehicle along a one-mile test track and 7 kilometer span of a highway using terrain

Brennan, Sean

279

Agent-based Planning and Simulation of Combined Rail/Road Luca Maria Gambardella, Andrea E. Rizzoli  

E-Print Network [OSTI]

on trains and assigns trucks to deliver them to the source terminal and to pick them up in the destination and promote intermodal transport as a vi- able alternative to long-haul road transport [1]. The PLATFORM in the terminals throughput might reduce the per- centage of long-haul transports on the road. Be- cause

Gambardella, Luca Maria

280

REFUEL: an EU road map for biofuels , E. Deurwaarder and S. Lensink, ECN policy Studies, the Netherlands  

E-Print Network [OSTI]

REFUEL: an EU road map for biofuels M. Londo1 , E. Deurwaarder and S. Lensink, ECN policy Studies), Poland K. Könighofer, Joanneum Research, Austria Abstract A successful mid-term development of biofuels calls for a robust road map. REFUEL assesses inter alia least-cost biofuel chain options, their benefits

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Recursive least squares with forgetting for online estimation of vehicle mass and road grade: theory and experiments  

E-Print Network [OSTI]

mass and road grade are important in automation of heavy duty vehicles, vehicle following manoeuvresRecursive least squares with forgetting for online estimation of vehicle mass and road grade, University of Michigan, G008 Lay Auto Lab, 1231 Beal Ave., Ann Arbor, MI 48109, USA Good estimates of vehicle

Peng, Huei

282

University of Nevada, Reno Tree crown mortality associated with roads in the Lake Tahoe Basin: a remote  

E-Print Network [OSTI]

University of Nevada, Reno Tree crown mortality associated with roads in the Lake Tahoe Basin entitled Tree crown mortality associated with roads in the Lake Tahoe Basin: a remote sensing approach, Advisor Robert S. Nowak, Committee Member Wendy Calvin, Graduate School Representative Marsha H. Read, Ph

Weisberg, Peter J.

283

Assessment of the PCDD/F fate from MSWI residues used1 in road construction in France2  

E-Print Network [OSTI]

1 Assessment of the PCDD/F fate from MSWI residues used1 in road construction in France2 3 R of these alternative materials is that of the Municipal59 Solid Waste Incinerator (MSWI) residue which is produced from the household60 wastes combustion and used for road and car-park construction.61 In France, the use of MSWI

Paris-Sud XI, Université de

284

The Essentials for GA Water Planning The Relationship  

E-Print Network [OSTI]

" FL Water Law Regulated Riparianism "Heavy" Admin Water Law ? #12;Comprehensive Water Resource Study Supply a. Water Allocation ­ Withdrawal Permit Program b. Water Storage & Delivery c. Interbasin TransferThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

285

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network [OSTI]

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

286

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n-lnGaAs/lnP/p-InGaAs heterostructures  

E-Print Network [OSTI]

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n (Received 23 November 1992; accepted for publication 4 March 1993) The realization of collector-up light for the collector stripe definition. Electrons, injected over the wide-gap heterostructure barrier (InAlAs or In

Luryi, Serge

287

Life in the Fast Lane: Road Crossing Behavior of Mule Deer in a Wildland-Urban Interface  

SciTech Connect (OSTI)

In 2009, approximately 260,000 animal-vehicle collisions were reported in the United States, resulting in 12,000 human injuries and 173 human fatalities. Research has focused on identifying factors associated with high densities of animal-vehicle collisions, including variables such as traffic speed and volume, road design, topographic features, vegetative cover, and local deer or elk (Cervus elaphus) abundance. The purposes of this study were to document how often and where mule deer (Odocoileus hemionus) crossed roads in a western United States wildland-urban interface area, and to relate deer road-crossing behavior to deer-vehicle collision locations. Seven adult mule deer (four males [M] and three females [F]) were captured and collared with GPS-enabled collars during December 2001 and January 2002. Five of the seven deployed collars were recovered. None of the roads in the study area appeared to act as a substantial barrier to deer passage. Deer home ranges straddled highways and primary, secondary, and tertiary arterial roads. Deer crossed all types of roads. The average number of times deer crossed road during 24 hours of monitoring ranged from 2.1 to 7.0. Deer in the Los Alamos townsite avoided crossing roads during day and before sunset. Deer-vehicle accidents occurred at 350 percent of the level expected after sunset. All other time periods had fewer accidents than expected. The distribution of accidents across time periods was not similar to the distribution of road crossings across time periods for any deer. Within Los Alamos County there was a clear trend for deer-vehicle collisions to occur on roads with speed limits > 35 mph. Deer in the townsite frequently crossed roads with lower speed limits; therefore, the reason for the paucity of accidents along these roads was evidently the ability of drivers to detect deer (or the ability of deer to detect vehicles) and respond before an accident occurred. There was a significant but not strong correlation between the density of accidents and the density of road crossings. This was probably related to the high number of deer crossings of tertiary arterial roads, where accidents were not likely to occur.

Hansen, Leslie A. [Los Alamos National Laboratory; Biggs, James [Northern New Mexico College; Bennett, Kathryn D. [Los Alamos National Laboratory; Bare, Carey [Bare and Associates, LLC; Sherwood, Sherri R. [Los Alamos National Laboratory

2012-04-04T23:59:59.000Z

288

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

289

Elastic properties of Pu metal and Pu-Ga alloys  

SciTech Connect (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

290

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect (OSTI)

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

291

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach  

E-Print Network [OSTI]

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

Itoh, Tatsuo

292

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

293

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network [OSTI]

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

294

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

295

Fabrication of quantum point contacts by engraving GaAsAlGaAs heterostructures with a diamond tip  

E-Print Network [OSTI]

by hot-filament chemical vapor deposition of polycrystalline diamond onto a prepat- terned siliconFabrication of quantum point contacts by engraving GaAsÕAlGaAs heterostructures with a diamond tip for publication 17 July 2002 We use the all-diamond tip of an atomic force microscope for the direct engraving

Hohls, Frank

296

OPTIMIZATION OF GaN WINDOW LAYER FOR InGaN SOLAR CELLS USING POLARIZATION EFFECT  

E-Print Network [OSTI]

on the design of wide-band gap GaN window layers for InGaN solar cells. Window layers serve to passivate the top into account during design of the solar cell to improve its collection efficiency. Previously, we have. The present work is a subset of the design optimization process for such solar cells, where we focus

Honsberg, Christiana

297

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network [OSTI]

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm Ga...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

298

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network [OSTI]

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

299

Diffusion of a Ga adatom on the GaAs(001)c(44)heterodimer surface: A first principles study  

E-Print Network [OSTI]

Diffusion of a Ga adatom on the GaAs(001)c(4×4)heterodimer surface: A first principles study J Diffusion barriers Reconstruction Density functional calculations The adsorption and diffusion behavior functional theory (DFT) computations in the local density approxima- tion. Structural and bonding features

Khare, Sanjay V.

300

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields  

E-Print Network [OSTI]

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures with increasing external electric field, with the radiative component exhibiting weaker field dependence. © 2009 applied electric field in Ref. 12, the electric field dependent radiative recombination in particular has

Demir, Hilmi Volkan

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a)  

E-Print Network [OSTI]

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a) M. Patrini,1 G; accepted 5 May 2011; published online 20 June 2011) The effect of hydrogen irradiation on the optical for fiber optic communications. These promising results in view of the development of waveguides deserve

302

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network [OSTI]

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

303

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network [OSTI]

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

304

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers  

E-Print Network [OSTI]

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers C. Wetzel, Nagoya, Japan Received 11 December 1995; accepted for publication 21 February 1996 Infrared reflection, their alloys and potential substrates need to be investigated as well. Here we present a study of the infrared

Wetzel, Christian M.

305

SNES 2000: Environmental Sciences Colloquium Green Development: The road to a sustainable  

E-Print Network [OSTI]

SNES 2000: Environmental Sciences Colloquium Fall 2009 Green Development: The road to a sustainable from natural and social sciences Melissa Everett, Sustainable Hudson Valley September 25 Green University October 2 Green building: Tints and shades Jack Elliott, Design and Environmental Analysis

Angenent, Lars T.

306

Project Information Form Project Title Reduction of Lifecycle Green House Gas Emissions From Road  

E-Print Network [OSTI]

Project Information Form Project Title Reduction of Lifecycle Green House Gas Emissions From Road@ucdavis.edu Funding Source(s) and Amounts Provided (by each agency or organization) US DOT $30,000 Total Project Cost Brief Description of Research Project This white paper will summarize the state of knowledge and state

California at Davis, University of

307

Addendum: Tenth International Symposium on Alcohol Fuels, The road to commercialization  

SciTech Connect (OSTI)

The Tenth International Symposium on ALCOHOL FUELS ``THE ROAD TO COMMERCIALIZATION`` was held at the Broadmoor Hotel, Colorado Springs, Colorado, USA November 7--10, 1993. Twenty-seven papers on the production of alcohol fuels, specifications, their use in automobiles, buses and trucks, emission control, and government policies were presented. Individual papers have been processed separately for entry into the data base.

Not Available

1994-05-01T23:59:59.000Z

308

Remote Sensing of Mobile Source Air Pollutant Emissions: Variability and Uncertainty in On-Road Emissions  

E-Print Network [OSTI]

Remote Sensing of Mobile Source Air Pollutant Emissions: Variability and Uncertainty in On.0 INTRODUCTION 1 1.1 Mobile Source Emissions 2 1.2 Emission Regulations 2 1.3 Emissions Contributions of "Non Estimates 70 6.3 Fuel Economy Data for School Buses Observed at the Rock Quarry Road Site 75 6.4 Diesel

Frey, H. Christopher

309

Framework for a Road Map to Magnetic Fusion Energy Status Report  

E-Print Network [OSTI]

Framework for a Road Map to Magnetic Fusion Energy Status Report Dale Meade for U. S. Magnetic paths: 1) ITER plus Fusion Nuclear Science Facility leading to a Tokamak DEMO 2) ITER directly Fusion Program Leaders Working Group MIT Independent Activities Period Plasma Science and Fusion Center

310

Off-Road Vehicle Impact on Sediment Displacement and Disruption at Assateague Island National Seashore, Maryland  

E-Print Network [OSTI]

The National Park Service (NPS) monitors off-road vehicle (ORV) use in National Seashores across the United States. The sediment disturbance that is caused by ORVs is believed to have a large impact on erosion (by wind or waves), which...

Labude, Brian

2012-08-15T23:59:59.000Z

311

Accelerating From vehicles on the road to the energy that powers  

E-Print Network [OSTI]

Accelerating Solutions From vehicles on the road to the energy that powers them, Oak Ridge National the deployment of a new generation of energy efficient vehicles powered by domestic, renewable, clean energy. EPA-2 emis- sions levels with ultra-low sulfur diesel fuel. Power electronics and electric propulsion

Pennycook, Steve

312

MANAGING THE NATIONAL ROAD NETWORK MAINTENANCE IN SPAIN Vctor Gmez Fras  

E-Print Network [OSTI]

MANAGING THE NATIONAL ROAD NETWORK MAINTENANCE IN SPAIN Víctor Gómez Frías GETINSA (Spain), vgomez@getinsa.es Teresa Sánchez Chaparro ANECA (Spain), tsanchez@aneca.es ABSTRACT The Spanish Ministry of Public Works point of view. In order to understand the importance and difficulty that presents in Spain

Paris-Sud XI, Université de

313

USVI Energy Road Map: Charting the Course to a Clean Energy Future (Brochure)  

SciTech Connect (OSTI)

This brochure provides an overview of the integrated clean energy deployment process and progress of the Energy Development in Island Nations U.S. Virgin Islands pilot project road map, including over-arching goals, organization, strategy, technology-specific goals and accomplishments, challenges, solutions, and upcoming milestones.

Not Available

2011-07-01T23:59:59.000Z

314

TOOLS TO MODEL ROAD IMPACTS Providing scientific knowledge and technology to sustain  

E-Print Network [OSTI]

TOOLS TO MODEL ROAD IMPACTS Providing scientific knowledge and technology to sustain our nation://www.fs.fed.us/rm/boise/AWAE_home.shtml BACKGROUND The Rocky Mountain Research Station has a long his- tory of developing tools that meet the needs. Existing tools have been optimized to answer particular man- agement questions at specific spatial scales

Fried, Jeremy S.

315

Snow and Ice Control Best Management Practices Parking Lots, Sidewalks, Roads  

E-Print Network [OSTI]

Snow and Ice Control Best Management Practices Parking Lots, Sidewalks, Roads Minnesota Circuit opportunity to improve the way we manage snow and ice in Minnesota. By using snow and ice control best safer--while saving money and protecting water quality. Current Situation The snow and ice maintenance

Minnesota, University of

316

An overview of recycling in road infrastructure in France from the OFRIR Jullien Agnsa  

E-Print Network [OSTI]

(Ministry of Transport and Construction/Scientifical office and Road direction), by MEDD/DPPR (Ministry of environment and sustainable development/ Pollution and risk direction), by ADEME (Energy and Environment products are presented, among which civil engineering by-products and other industrial by-products have

Boyer, Edmond

317

An improved approach for robust road marking detection and tracking applied to multi-lane estimation.  

E-Print Network [OSTI]

provided a great number of devices on many types of automatic vehicle guidance and security systems of an environment surrounding an ego-vehicle. Indeed, this information provides relative vehicle location evident the automation of the driving task is probably a solution in the reduction of the road injuries

Paris-Sud XI, Université de

318

Environmental assessment of a BOF steel slag used in road construction: The ECLAIR research program  

E-Print Network [OSTI]

1 Environmental assessment of a BOF steel slag used in road construction: The ECLAIR research and to the lack of environmental regulations. This study aimed at investigating the potential release and impact of pollutants, especially Cr and V that are present in rather high concentrations in slag, from a BOF slag used

Boyer, Edmond

319

EN-017 Silviculture March 2003 Tree Growth on Rehabilitated Forest Roads in  

E-Print Network [OSTI]

production on managed forest lands. Restoring soil conditions on roads that probably would not otherwise-effective meth- ods need to be established. In parts of interior British Columbia success- ful forest on 25 of the 73 original plots, along with soil conditions, vegetation recolonization, and competition

320

Detection of Vulnerable Road Users in Smart Cities Francisco Guayante, Arnoldo Daz-Ramrez  

E-Print Network [OSTI]

Detection of Vulnerable Road Users in Smart Cities Francisco Guayante, Arnoldo Díaz. In order to cope with the problems of the growing urban communities, the concept of smart cities has emerged. A smart city is based on the use of smart computing technologies, such as Intelligent

Mejia-Alvarez, Pedro

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

EA-1980: Spar Canyon-Round Valley Access Road System Improvements, Custer County, Idaho  

Broader source: Energy.gov [DOE]

Bonneville Power Administration is preparing an EA to assess potential environmental impacts of proposed improvements to the access road system for its existing Spar Canyon-Round Valley Transmission Line located on Bureau of Land Management land in Custer County, Idaho.

322

When the Rubber Meets the Road: Putting Research-based Methods to Test in Urban Classrooms  

E-Print Network [OSTI]

When the Rubber Meets the Road: Putting Research-based Methods to Test in Urban Classrooms Junlei group's performance was assessed by standardized test items and compared with that of a high also reveal a significant discrepancy between low-SES students' performance on standardized test items

Klahr, David

323

UNITED INDIA INSURANCE COMPANY LIMITED REGISTERED & HEAD OFFICE: 24, WHITES ROAD, CHENNAI-600014  

E-Print Network [OSTI]

UNITED INDIA INSURANCE COMPANY LIMITED REGISTERED & HEAD OFFICE: 24, WHITES ROAD, CHENNAI-600014 HEALTH INSURANCE POLICY ­ GROUP 1 WHEREAS the insured designated in the Schedule hereto has by a proposal to be incorporated herein has applied to UNITED INDIA INSURANCE COMPANY LTD. (hereinafter called the COMPANY

Dhingra, Narender K.

324

Modelling a Car Safety Controller in Road Tunnels using Hybrid Petri Nets A. Bobbio[1  

E-Print Network [OSTI]

Modelling a Car Safety Controller in Road Tunnels using Hybrid Petri Nets A. Bobbio[1] , M this specific issue and proposes a hybrid modeling approach based on fluid Petri nets (FPN). An FPN is used that FPN is a valid paradigm to model the dynamics of a car in a detailed way. 1 Introduction In the last

Horváth, András

325

USVIEnergyRoadMap Charting the Course to a Clean Energy Future  

E-Print Network [OSTI]

USVIEnergyRoadMap Charting the Course to a Clean Energy Future EDIN Energy Development in Island's (DOE's) National Renewable Energy Laboratory (NREL), as well as financial and technical support from Nations U.S. Virgin Islands EDIN Energy Development in Island Nations U.S. Virgin Islands EDIN Energy

326

Infrastructure, biotech top African science summit agenda Roads, electricity, telephones and the internet  

E-Print Network [OSTI]

N E W S Infrastructure, biotech top African science summit agenda Roads, electricity, telephones, the public-private partnership known as the Gavi Alliance, had saved the lives of more than 2 million African of medical doctors, traditional healers and the private sector in Lusaka, Zambia. The meeting is part of his

Cai, Long

327

Low-Latency ECDSA Signature Verification A Road Towards Safer Traffic  

E-Print Network [OSTI]

crippling efficient movement inside and towards cities resulting in mounting travel times, fuel consumption running on high end CPUs and FPGAs. These implementations are far from cost-effective nor energy efficient caused by the rising traffic densities on our roads and in our cities. Traffic congestion is increasingly

328

VTrack: Accurate, Energy-Aware Road Traffic Delay Estimation Using Mobile Phones  

E-Print Network [OSTI]

for travel time estimation using this sensor data that addresses two key challenges: energy consumptionVTrack: Accurate, Energy-Aware Road Traffic Delay Estimation Using Mobile Phones Arvind Thiagarajan the bat- tery quickly. In these cases, VTrack can use alternative, less energy-hungry but noisier sensors

Gummadi, Ramakrishna

329

The Relative Importance of Road Density and Physical Watershed Features in Determining Coastal Marsh Water  

E-Print Network [OSTI]

with overall Water Quality Index scores. Road density also showed positive correlations with total nitrate Marsh Water Quality in Georgian Bay Rachel DeCatanzaro Ã? Maja Cvetkovic Ã? Patricia Chow-Fraser Received and physical watershed features (watershed size, wetland cover, and bedrock type) on water quality in coastal

McMaster University

330

INVITED REVIEWS AND META-ANALYSES A road map for molecular ecology  

E-Print Network [OSTI]

INVITED REVIEWS AND META-ANALYSES A road map for molecular ecology ROSE L. ANDREW,1 LOUIS, University of Wyoming, 1000 E. University Ave., Laramie, WY 82071, USA, 5 Department of Evolution, Ecology and Organismal Biology, 318 W. 12th Ave., The Ohio State University, Columbus, OH 43210, USA, 6 Island Ecology

Rieseberg, Loren

331

Roads2HyCOM Research co-Ordination, Assessment, Deployment and  

E-Print Network [OSTI]

of which nine are specific to hydrogen (H2) and/or fuel cell (FC) technology and two to generalRoads2HyCOM Research co-Ordination, Assessment, Deployment and Support to HyCOM (Hydrogen October 2006 Work Package 3 Task 3.1-2, Deliverable D3.1b 1. A study of experiences with hydrogen

332

On-Road Remote Sensing of Heavy-duty Diesel Truck  

E-Print Network [OSTI]

On-Road Remote Sensing of Heavy-duty Diesel Truck Emissions in the Austin- San Marcos Area: August, HC, and NO to CO2 and to get percent opacity readings for heavy-duty diesel trucks with elevated. The fleet of these heavy-duty diesel trucks exhibits a distribution that is close to normal where the top 20

Denver, University of

333

The Effects of Altitude on Heavy-Duty Diesel Truck On-Road  

E-Print Network [OSTI]

The Effects of Altitude on Heavy-Duty Diesel Truck On-Road Emissions G A R Y A . B I S H O P , * J oxide from 5772 heavy-duty diesel trucks at five locations in the United States and Europe show slightly health risk (2). These and other factors have brought new attention to diesel truck emissions. Because

Denver, University of

334

Kursplan fr lsret 2001/2002 ROAD-MAN-LANDSCAPE -IN THEORY ASB155  

E-Print Network [OSTI]

-operation with complementary competences, and taking into account traffic, landscape and environmental requirements. Innehåll planning, road construction, landscape architecture, urban architecture, planning processes and the use) students of engineering, architecture and landscape architecture, and future planners and managers

335

Estimation of vehicle lateral tire-road forces: a comparison between extended and unscented Kalman filtering  

E-Print Network [OSTI]

Estimation of vehicle lateral tire-road forces: a comparison between extended and unscented Kalman of accident data reveals that losing the vehicle control is responsible for a huge proportion of car accidents. Preventing such kind of accidents using vehicle control systems, requires certain input data concerning

Paris-Sud XI, Université de

336

Techniques and Technology Article Road-Based Surveys for Estimating Wild Turkey Density  

E-Print Network [OSTI]

Techniques and Technology Article Road-Based Surveys for Estimating Wild Turkey Density-transect­based distance sampling has been used to estimate density of several wild bird species including wild turkeys­2005 at 3 study sites in the Texas Rolling Plains, USA, to simulate Rio Grande wild turkey (M. g. intermedia

Butler, Matthew J.

337

Life Cycle Assessment Comparing the Use of Jatropha Biodiesel in the Indian Road and Rail Sectors  

SciTech Connect (OSTI)

This life cycle assessment of Jatropha biodiesel production and use evaluates the net greenhouse gas (GHG) emission (not considering land-use change), net energy value (NEV), and net petroleum consumption impacts of substituting Jatropha biodiesel for conventional petroleum diesel in India. Several blends of biodiesel with petroleum diesel are evaluated for the rail freight, rail passenger, road freight, and road-passenger transport sectors that currently rely heavily on petroleum diesel. For the base case, Jatropha cultivation, processing, and use conditions that were analyzed, the use of B20 results in a net reduction in GHG emissions and petroleum consumption of 14% and 17%, respectively, and a NEV increase of 58% compared with the use of 100% petroleum diesel. While the road-passenger transport sector provides the greatest sustainability benefits per 1000 gross tonne kilometers, the road freight sector eventually provides the greatest absolute benefits owing to substantially higher projected utilization by year 2020. Nevertheless, introduction of biodiesel to the rail sector might present the fewest logistic and capital expenditure challenges in the near term. Sensitivity analyses confirmed that the sustainability benefits are maintained under multiple plausible cultivation, processing, and distribution scenarios. However, the sustainability of any individual Jatropha plantation will depend on site-specific conditions.

Whitaker, M.; Heath, G.

2010-05-01T23:59:59.000Z

338

A tale of two roads: Land tenure, poverty, and politics on the Guatemalan frontier  

E-Print Network [OSTI]

A tale of two roads: Land tenure, poverty, and politics on the Guatemalan frontier David Carr April 2003 Abstract Agricultural frontiers are hot spots for the most dramatic land cover change of literature explores the determinants of land cover change on the frontier, one issue that has been largely

Lopez-Carr, David

339

Improvement of the Road Traffic Management by an Ant-Hierarchical Fuzzy System  

E-Print Network [OSTI]

of an adaptive vehicle guidance system. The proposed method is implemented as a deliberative module of a vehicle quality in terms of time, fluidity, and adaptability. Index Terms--transportation, adaptive vehicle of ITS are the vehicle guidance [1], the optimization of the road traffic flow [2], the manage- ment

Casillas Barranquero, Jorge

340

CBER-DETR Nevada Coincident and Leading Employment Leading Index Hits Bump in the Road  

E-Print Network [OSTI]

the seasonally adjusted data reported by the Bureau of Labor Statistics. The Nevada Coincident Employment IndexCBER-DETR Nevada Coincident and Leading Employment Indexes1 Leading Index Hits Bump in the Road The Nevada Coincident Employment Index measures the ups and downs of the Nevada economy using an index

Ahmad, Sajjad

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

CBER-DETR Nevada Coincident and Leading Employment Bumps in the Road of Recovery  

E-Print Network [OSTI]

the seasonally adjusted data reported by the Bureau of Labor Statistics. The Nevada Coincident Employment IndexCBER-DETR Nevada Coincident and Leading Employment Indexes1 Bumps in the Road of Recovery The Nevada Coincident Employment Index measures the ups and downs of the Nevada economy using an index

Ahmad, Sajjad

342

CBER-DETR Nevada Coincident and Leading Employment Recovery Continues Down the Long Road Back  

E-Print Network [OSTI]

the seasonally adjusted data reported by the Bureau of Labor Statistics. The Nevada Coincident Employment IndexCBER-DETR Nevada Coincident and Leading Employment Indexes1 Recovery Continues Down the Long Road Back The Nevada Coincident Employment Index measures the ups and downs of the Nevada economy using

Ahmad, Sajjad

343

On-Road Remote Sensing of Automobile Emissions in the Chicago Area: Year 4  

E-Print Network [OSTI]

of the internal combustion engine and causes of pollutants in the exhaust see Heywood2 . Properly operating modern for water and any excess oxygen not involved in combustion. Mass emissions per mass or volume of fuel canOn-Road Remote Sensing of Automobile Emissions in the Chicago Area: Year 4 Sajal S. Pokharel, Gary

Denver, University of

344

The impact of incentives on the use of toll roads by trucks  

E-Print Network [OSTI]

. Unfortunately, the low profit margin in the trucking industry and the relatively high tolls truckers pay leads to their reluctance to use toll facilities. Incentives for truck use of a toll road, State Highway 130 (SH 130) near Austin, Texas, were analyzed...

Zhou, Lin

2010-07-14T23:59:59.000Z

345

3.d. TYPE (Street or Off-road) COMMANDER'S MOTORCYCLE SAFETY INTERVIEW  

E-Print Network [OSTI]

3.d. TYPE (Street or Off-road) COMMANDER'S MOTORCYCLE SAFETY INTERVIEW AETC FORM 708, APR 98 (EF-V2-207/AETC Sup 1. PURPOSE: To gather data and background information for use in managing the unit motorcycle be susceptible to a motorcycle accident. The intent is to identify potential problems that could lead to injury

346

FRONTAGE ROADS: AN ASSESSMENT OF LEGAL ISSUES, DESIGN DECISIONS, COSTS, OPERATIONS, AND LAND-DEVELOPMENT DIFFERENCES  

E-Print Network [OSTI]

FRONTAGE ROADS: AN ASSESSMENT OF LEGAL ISSUES, DESIGN DECISIONS, COSTS, OPERATIONS, AND LAND with lower household incomes, lower population densities, lower percentages of bike trips to work, lower in constructing a solid, formal policy for all states and regions to follow in providing access along new

Kockelman, Kara M.

347

Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings  

SciTech Connect (OSTI)

The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Carrington, P. J. [Department of Electronic and Electrical Engineering, University College London, London (United Kingdom); Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-07-28T23:59:59.000Z

348

Single photon emission from site-controlled InGaN/GaN quantum dots  

SciTech Connect (OSTI)

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90?K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10?K.

Zhang, Lei; Hill, Tyler A.; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)] [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Lee, Leung-Kway; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)] [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2013-11-04T23:59:59.000Z

349

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

350

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect (OSTI)

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

351

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

352

Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well  

SciTech Connect (OSTI)

The relaxation of lattice-mismatched strain by deep postetching was systematically investigated for InGaN/GaN multiple quantum wells (MQWs). A planar heterojunction wafer, which included an In{sub 0.21}Ga{sub 0.79}N (3.2 nm)/GaN (14.8 nm) MQW, was etched by inductively coupled plasma dry etching, to fabricate high-density nanopillar, nanostripe, and nanohole arrays. The etching depth was 570 nm for all nanostructures. The diameter of the nanopillars was varied from 50 to 300 nm, then the mesa stripe width of the nanostripes and the diameter of the nanoholes were varied from 100 nm to 440 nm and 50 nm to 310 nm, respectively. The effect of strain relaxation on various optical properties was investigated. For example, in an array of nanopillars with diameter 130 nm and interval 250 nm, a large blueshift in the photoluminescence (PL) emission peak from 510 nm (as-grown) to 459 nm occurred at room temperature (RT). PL internal quantum efficiency (defined by the ratio of PL integral intensity at 300 K to that at 4.2 K) was enhanced from 34% (as-grown) to 60%, and the PL decay time at 4.2 K was reduced from 22 ns (as-grown) to 4.2 ns. These results clearly indicate the reduction of lattice-mismatched strain by postetching, which enhanced strain reduction with decreasing nanopillar diameter down to a diameter of 130 nm, where the strain reduction became saturated. The dependence of RT-PL decay time on nanopillar diameter was measured, and the surface nonradiative recombination velocity was estimated to be 5.8x10{sup 2} cm/s. This relatively slow rate indicates a little etching damage.

Ramesh, V.; Kikuchi, A.; Kishino, K. [Department of Electrical and Electronics Engineering, Sophia University, Tokyo 102-8554, Japan and Nano-technology Research Center, Sophia University, Tokyo 102-8554 (Japan); CREST, JST, Saitama 332-0012 (Japan); Funato, M.; Kawakami, Y. [CREST, JST, Saitama 332-0012 (Japan); Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)

2010-06-15T23:59:59.000Z

353

Field dependent emission rates in radiation damaged GaAs  

SciTech Connect (OSTI)

We have measured the temperature and field dependence of emission rates from five traps in electron damaged GaAs. Four of the traps have previously been identified as radiation defects. One of the traps, seen in higher doped diodes, has not been previously identified. We have fit the data to a multiphonon emission theory that allows recombination in GaAs to be characterized over a broad range of temperature and electric field. These results demonstrate an efficient method to calculate field-dependent emission rates in GaAs.

Fleming, R. M.; Myers, S. M.; Wampler, W. R.; Lang, D. V.; Seager, C. H.; Campbell, J. M. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

2014-07-07T23:59:59.000Z

354

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

SciTech Connect (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

355

Ritual and Authority in Early Athens  

E-Print Network [OSTI]

Odysseus (Od. 22.334-336), Priam (Il. 24.306-307), Peleus (Odysseus (Od. 22.334-336), Priam (Il. 24.306-307), Peleus (incident to Penelope. 263 Priam 258. Il. 22.508-514: /I/ -

Laughy, Michael Harold

2010-01-01T23:59:59.000Z

356

Athens, Greece: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpenWendeGuo Feng Bio EnergyInstituteFunding JumpGeothermalGreece:

357

Athens, Ohio: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpenWendeGuo Feng Bio EnergyInstituteFunding

358

Athens, Ohio: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 EastMaine: Energy Resources JumpAspen Aerogels05. It is classified as

359

Athens, Wisconsin: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 EastMaine: Energy Resources JumpAspen Aerogels05. It is classified as330224°,

360

Athens Utility Board | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating SolarElectricEnergyCT BiomassArnprior, Ontario: EnergyAskja EnergyIowa) JumpBoard Jump

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect (OSTI)

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

362

Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs  

SciTech Connect (OSTI)

The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Afonenko, A. A. [Belarussian State University (Belarus)] [Belarussian State University (Belarus); Dikareva, N. V. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation); Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Kudryavtsev, K. E.; Morozov, S. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Nekorkin, S. M. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)

2013-11-15T23:59:59.000Z

363

Electrical spin injection using GaCrN in a GaN based spin light emitting diode  

SciTech Connect (OSTI)

We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

Banerjee, D.; Ganguly, S.; Saha, D., E-mail: dipankarsaha@iitb.ac.in [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); IITB-Monash Research Academy, Indian Institute of Technology Bombay, Mumbai 400076 (India); Adari, R.; Sankaranarayan, S.; Kumar, A. [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India)] [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S. [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)] [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

2013-12-09T23:59:59.000Z

364

Beta-decay branching ratios of 62Ga  

E-Print Network [OSTI]

Beta-decay branching ratios of 62Ga have been measured at the IGISOL facility of the Accelerator Laboratory of the University of Jyvaskyla. 62Ga is one of the heavier Tz = 0, 0+ -> 0+ beta-emitting nuclides used to determine the vector coupling constant of the weak interaction and the Vud quark-mixing matrix element. For part of the experimental studies presented here, the JYFLTRAP facility has been employed to prepare isotopically pure beams of 62Ga. The branching ratio obtained, BR= 99.893(24)%, for the super-allowed branch is in agreement with previous measurements and allows to determine the ft value and the universal Ft value for the super-allowed beta decay of 62Ga.

A. Bey; B. Blank; G. Canchel; C. Dossat; J. Giovinazzo; I. Matea; V. Elomaa; T. Eronen; U. Hager; M. Hakala; A. Jokinen; A. Kankainen; I. Moore; H. Penttila; S. Rinta-Antila; A. Saastamoinen; T. Sonoda; J. Aysto; N. Adimi; G. De France; J. C. Thomas; G. Voltolini; T. Chaventré

2008-04-17T23:59:59.000Z

365

Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot  

SciTech Connect (OSTI)

In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

Emre Kavruk, Ahmet, E-mail: aekavruk@selcuk.edu.tr, E-mail: aekavruk@gmail.com; Koc, Fatih [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Sahin, Mehmet, E-mail: mehmet.sahin@agu.edu.tr, E-mail: mehsahin@gmail.com [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Department of Material Sciences and Nanotechnology Engineering, Abdullah Gul University, Kayseri (Turkey)

2013-11-14T23:59:59.000Z

366

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network [OSTI]

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

367

Lattice vibrations of pure and doped GaSe  

SciTech Connect (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

368

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents [OSTI]

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

369

eVMTeVMT Analysis of OnAnalysis of OnRoad Data fromRoad Data from PlugPlugIn Hybrid Electric andIn Hybrid Electric and  

E-Print Network [OSTI]

eVMTeVMT Analysis of OnAnalysis of OnRoad Data fromRoad Data from PlugPlugIn Hybrid Electric andIn Hybrid Electric and gov PlugPlug In Hybrid Electric andIn Hybrid Electric and AllAllElectric Vehicles Electric Vehicles www.inl.g October 2, 2014 Richard "Barney" Carlson w INL/MIS-14-32984 y Shawn Salisbury

California at Davis, University of

370

Anti-phase domains in cubic GaN  

SciTech Connect (OSTI)

The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {l_brace}111{r_brace} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, {mu}-Raman and cathodoluminescence spectroscopy.

Maria Kemper, Ricarda; Schupp, Thorsten; Haeberlen, Maik; Lindner, Joerg; Josef As, Donat [University of Paderborn, Department of Physics, Warburger Str. 100, D-33098 Paderborn (Germany); Niendorf, Thomas; Maier, Hans-Juergen [University of Paderborn, Lehrstuhl fuer Werkstoffkunde, Pohlweg 47-49, D-33098 Paderborn (Germany); Dempewolf, Anja; Bertram, Frank; Christen, Juergen [University of Magdeburg, Institut fuer Festkoerperphysik, P.O. Box 4120, D-39016 Magdeburg (Germany); Kirste, Ronny; Hoffmann, Axel [Technische Universitaet Berlin, Institute of Solid State Physics, Hardenbergstr. 36, D-10623 Berlin (Germany)

2011-12-15T23:59:59.000Z

371

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network [OSTI]

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

372

p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas  

SciTech Connect (OSTI)

Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

2013-12-23T23:59:59.000Z

373

Epitaxial growth of Cu,,In,Ga...Se2 on GaAs,,110... and A. Rockett  

E-Print Network [OSTI]

. INTRODUCTION The Cu(In, Ga)Se2 CIGS absorber layer in a recent record-efficiency CIGS solar cell1 has a 220.13 Commercially supplied ``epi-ready'' liquid- encapsulated Czo

Rockett, Angus

374

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods  

E-Print Network [OSTI]

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

2013-01-01T23:59:59.000Z

375

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces  

SciTech Connect (OSTI)

We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

2014-11-03T23:59:59.000Z

376

Use of vegetation for abatement of road traffic noise in a 1:10 scale street model  

E-Print Network [OSTI]

Use of vegetation for abatement of road traffic noise in a 1:10 scale street model J.Y. Jeona , H was constructed to evaluate the noise abatement by use of vegetation as sustainable means. The model materials

Paris-Sud XI, Université de

377

Ventilation and Suppression Systems in Road Tunnels: Some Issues regarding their Appropriate Use in a Fire Emergency   

E-Print Network [OSTI]

Two important tunnel safety technologies are addressed. The majority of long road tunnels have ventilation systems. In the event of a fire in a tunnel, such systems will influence fire development in a number of different ...

Carvel, Ricky O; Rein, Guillermo; Torero, Jose L

378

RCRA Facility Investigation/Remedial Investigation Report for the Gunsite 113 Access Road Unit (631-24G) - March 1996  

SciTech Connect (OSTI)

Gunsite 113 Access Road Unit is located in the northeast corner of SRS. In the mid 1980`s, sparse vegetation, dead trees, and small mounds of soil were discovered on a portion of the road leading to Gunsite 113. This area became the Gunsite 113 Access Road Unit (Gunsite 113). The unit appears to have been used as a spoil dirt and / or road construction debris disposal area. There is no documentation or record of any hazardous substance management, disposal, or any type of waste disposal at this unit. Based upon the available evidence, there are no potential contaminants of concern available for evaluation by a CERCLA baseline risk assessment. Therefore, there is no determinable health risk associated with Gunsite 113. In addition, it is also reasonable to conclude that, since contamination is below risk-based levels, the unit presents no significant ecological risk. It is recommended that no further remedial action be performed at this unit.

Palmer, E. [Westinghouse Savannah River Company, AIKEN, SC (United States)

1996-03-01T23:59:59.000Z

379

Development and Leadership of R&D Consortia: Lessons learned and possible road ahead for continued innovation1  

E-Print Network [OSTI]

1 Development and Leadership of R&D Consortia: Lessons learned and possible road ahead/industry/government/NGO organizations, primarily based on lessons I have learned after creating (in 1998) and leading (during 19982001

Amin, S. Massoud

380

EA-0904: Access Road from State Route 240 to the 200 West Area Hanford Site, Richland, Washington  

Broader source: Energy.gov [DOE]

This EA evaluates the environmental impacts of a proposal to construct an access road on the U.S. Department of Energy's Hanford Site in Richland, Washington, from State Route 240 to Beloit Avenue...

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk  

SciTech Connect (OSTI)

Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

2014-11-07T23:59:59.000Z

382

The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa  

SciTech Connect (OSTI)

We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

Özduran, Mustafa [Ahi Evran Üniversitesi Fen Edebiyat Fakültesi Fizik Bölümü, K?r?ehir (Turkey); Turgut, Kemal [Yüksek Lisans Ö?rencisi, K?r?ehir (Turkey); Arikan, Nihat [Ahi Evran Üniversitesi E?itim Fakültesi ?lkö?retim Bölümü, K?r?ehir (Turkey); ?yigör, Ahmet; Candan, Abdullah [Ahi Evran Üniversitesi Merkezi Ara?t?rma Laboratuvar?, K?r?ehir (Turkey)

2014-10-06T23:59:59.000Z

383

Reduced lattice temperature high-speed operation of pseudomorphic InGaAdGaAs field-effect transistors  

E-Print Network [OSTI]

,um GaAs buffer, 170 A Ino.zGao,sAs strained channel, 50 A undoped Ale,,,Ga,,,As undoped spacer, S dimensions of 0.25 x 200 pm and 0.5 X 200 pm with a source-drain spacing of 2 ,um. The MODFETs have gate dimensions of 0.35~ 100 pm and 0.47X 100 pm with a source-drain spacing of 1 ,um. The MISFETs have

Kolodzey, James

384

Impacts of the extended-weight coal haul road system (interim report). Research report  

SciTech Connect (OSTI)

The Extended-Weight Coal Haul Road System, created by Kentucky`s Legislature in 1986, consists of all roads which carry over 50,000 tons of coal in a calendar year. Trucks hauling coal on this system are authorized to exceed normal weight limits through the payment of an annual decal fee. A research study was initiated in July of 1992 to analyze the impacts of the extended-weight system. This interim report prepared after one year of a three-year study, describes the analyses performed thus far and presents preliminary findings, recommendations, and a discussion of future work. Analyses in this report are based on: historical data on coal production and transportation; data from coal decal applications; interviews of legislators, transportation officials, coal company representatives, and coal trucking representatives: newspaper articles; vehicle classification data; a pavement cost analysis; and accident data. Preliminary conclusions include: (1) The extended-weight system has apparently been somewhat successful in accomplishing the primary objectives: to enhance the competitiveness and economic viability of Kentucky`s coal industry and to eliminate the perceived need for cal haulers to violate the law in order to be competitive; (2) Overall accident rates are no higher on the extended-weight system than on other comparable routes, but the fatal accident rate is significantly higher on the extended-weight system; (3) The coal-decal fee structure results in a net annual loss in Road Fund revenue of approximately $2 million; (4) Forty percent of the revenue from decal sales is allocated to the counties, although less than ten percent of the extended-weight system in county-maintained; (5) The heavier weights of coal-decal trucks add approximately $9 million annually to pavement overlay costs and increase other highway costs. (6) Road users throughout the state are subsidizing the movement of Kentucky coal by underwriting the increased costs.

Crabtree, J.D.; Pigman, J.G.; Deacon, J.A.; Agent, K.R.

1993-10-01T23:59:59.000Z

385

A computer solution for estimating owning and operating costs for over-the-road hauling units  

E-Print Network [OSTI]

OF CONTENTS PAGE ABSTRACT ACKNOWLEDGEMENT S iv LIST OF TABLES LIST OF FIGURES vii ix CHAPTER I INTRODUCTION II OVER-THE-ROAD HAULING UNITS Characteristics Preliminary Purchase Investigation Vehicle Specifications Fuel Type Weight Restrictions... SIMULATION RUN III OUTPUT, SECOND SIMULATION RUN 88 101 113 VITA 125 yii LIST OF TABLES TABLE PAGE Major On-Highway Truck Manufacturers Gross Vehicle Weight (GVW) Components 10 12 3. (a) Fuel Costs Per Gallon 3. (b) Fuel Consumed Per Brake HP...

Wenners, Edward Bernard

1972-01-01T23:59:59.000Z

386

The effect of standard ambient conditions used for the determination of road load to predict vehicle fuel economy  

E-Print Network [OSTI]

THE EFFECT OF STANDARD AN1BIENT CONDITIONS USED FOR THE DETERMINATION OF ROAD LOAD TO PREDICT VEHICLE FUEL ECONOMY A Thesis by Michael Lee Love Submitted to the Graduate College of Texas A&M University in partial fulfillment... of the requirement for the degree of MASTER OF SCIENCE May 198Z Major Subject: Mechanical Engineering THE EFFECT OF STANDARD AMBIENT CONDITIONS USED FOR THE DETERMINATION OF ROAD LOAD TO PREDICT VEHICLE FUEL ECONOMY A Thesis by Michael Lee Love Approved...

Love, Michael Lee

1982-01-01T23:59:59.000Z

387

On-road evaluation of advanced hybrid electric vehicles over a wide range of ambient temperatures.  

SciTech Connect (OSTI)

In recent years, Hybrid Electric Vehicles (HEV's) have become a production viable and effective mode of efficient transportation. HEV's can provide increased fuel economy over convention technology vehicle, but these advantages can be affected dramatically by wide variations in operating temperatures. The majority of data measured for benchmarking HEV technologies is generated from ambient test cell temperatures at 22 C. To investigate cold and hot temperature affects on HEV operation and efficiency, an on-road evaluation protocol is defined and conducted over a six month study at widely varying temperatures. Two test vehicles, the 2007 Toyota Camry HEV and 2005 Ford Escape HEV, were driven on a pre-defined urban driving route in ambient temperatures ranging from -14 C to 31 C. Results from the on-road evaluation were also compared and correlated to dynamometer testing of the same drive cycle. Results from this on-road evaluation show the battery power control limits and engine operation dramatically change with temperature. These changes decrease fuel economy by more than two times at -14 C as compared to 25 C. The two vehicles control battery temperature in different manners. The Escape HEV uses the air conditioning system to provide cool air to the batteries at high temperatures and is therefore able to maintain battery temperature to less than 33 C. The Camry HEV uses cabin air to cool the batteries. The observed maximum battery temperature was 44 C.

Carlson, R.; Duoba, M. J.; Bocci, D.; Lohse-Busch, H. (Energy Systems)

2007-01-01T23:59:59.000Z

388

Fate of Brine Applied to Unpaved Roads at a Radioactive Waste Subsurface Disposal Area  

SciTech Connect (OSTI)

Between 1984 and 1993, MgCl2 brine was used to suppress dust on unpaved roads at a radioactive waste subsurface disposal area. Because Cl– might enhance corrosion of buried metals in the waste, we investigated the distribution and fate of Cl– in the vadose zone using pore water samples collected from suction lysimeters and soluble salt concentrations extracted from sediment samples. The Cl/Br mass ratio and the total dissolved Cl– concentration of pore water show that brine contamination occurs primarily within 13 m of treated roads, but can extend as much as 30 m laterally in near-surface sedimentary deposits. Within the deep vadose zone, which consists of interlayered basalt lava flows and sedimentary interbeds, brine has moved up to 110 m laterally. This lateral migration suggests formation of perched water and horizontal transport during periods of high recharge. In a few locations, brine migrated to depths of 67 m within 3 to 5 yr. Elevated Cl– concentrations were found to depths of 2 m in roadbed material. In drainage ditches along roads, where runoff accumulates and recharge of surface water is high, Cl– was flushed from the sediments in 3 to 4 yr. In areas of lower recharge, Cl– remained in the sediments after 5 yr. Vertical brine movement is directly related to surface recharge through sediments. The distribution of Cl– in pore water and sediments is consistent with estimates of vadose zone residence times and spatial distribution of surface water recharge from other investigations at the subsurface disposal area.

Larry C. Hull; Carolyn W. Bishop

2004-02-01T23:59:59.000Z

389

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network [OSTI]

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

390

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect (OSTI)

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

391

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network [OSTI]

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

392

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells  

SciTech Connect (OSTI)

We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

2014-03-21T23:59:59.000Z

393

Testing of ethylene propylene seals for the GA-4/GA-9 casks  

SciTech Connect (OSTI)

The primary O-ring seal of the GA-4 and GA-9 casks was tested for leakage with a full-scale mockup of the cask lid and flange. Tests were performed at temperatures of ambient, {minus}41{degrees}, 121{degrees}, and 193{degrees}C. Shim plates between the lid and flange simulated gaps caused by thermal distortion. The testing used a helium mass spectrometer leak detector (MSLD). Results showed that the primary seal was leaktight for all test conditions. Helium permeation through the seal began in 13--23 minutes for the ambient tests and in 1--2 minutes for the tests at elevated temperatures. After each test several hours of the pumping were typically required to reduce the MSLD background reading to an acceptable level for the next test, indicating that the seal had become saturated with helium. To verify that the test results showed permeation and not real leakage, several response checks were conducted in which a calibrated leak source was inserted in the detector line near the seal. When the leak source was activated the detector responded within seconds.

Boonstra, R.H.

1993-08-01T23:59:59.000Z

394

Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment  

SciTech Connect (OSTI)

The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2014-10-07T23:59:59.000Z

395

Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence  

SciTech Connect (OSTI)

Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de; Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg (Germany); Glauser, Marlene; Carlin, Jean-François; Cosendey, Gatien; Butté, Raphaël; Grandjean, Nicolas [Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

2014-07-21T23:59:59.000Z

396

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network [OSTI]

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

397

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes  

SciTech Connect (OSTI)

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

2010-01-15T23:59:59.000Z

398

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect (OSTI)

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

399

Pulsed laser annealing of Be-implanted GaN  

SciTech Connect (OSTI)

Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved efficiently by conventional RTA alone. On the other hand, good dopant activation and surface morphology and quality were obtained when the Be-implanted GaN film was annealed by PLA with a 248 nm KrF excimer laser. However, observations of off-resonant micro-Raman and high-resolution x-ray-diffraction spectra indicated that crystal defects and strain resulting from Be implantation were still existent after PLA, which probably degraded the carrier mobility and limited the activation efficiency to some extent. This can be attributed to the shallow penetration depth of the 248 nm laser in GaN, which only repaired the crystal defects in a thin near-surface layer, while the deeper defects were not annealed out well. This situation was significantly improved when the Be-implanted GaN was subjected to a combined process of PLA followed by RTA, which produced good activation of the dopants, good surface morphology, and repaired bulk and surface defects well.

Wang, H.T.; Tan, L.S.; Chor, E.F. [Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2005-11-01T23:59:59.000Z

400

GaAs-based high temperature electrically pumped polariton laser  

SciTech Connect (OSTI)

Strong coupling effects and polariton lasing are observed at 155?K with an edge-emitting GaAs-based microcavity diode with a single Al{sub 0.31}Ga{sub 0.69}As/Al{sub 0.41}Ga{sub 0.59}As quantum well as the emitter. The threshold for polariton lasing is observed at 90?A/cm{sup 2}, accompanied by a reduction of the emission linewidth to 0.85?meV and a blueshift of the emission wavelength by 0.89?meV. Polariton lasing is confirmed by the observation of a polariton population redistribution in momentum space and spatial coherence. Conventional photon lasing is recorded in the same device at higher pump powers.

Baten, Md Zunaid; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu; Frost, Thomas; Deshpande, Saniya; Das, Ayan [Center for Photonic and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Lubyshev, Dimitri; Fastenau, Joel M.; Liu, Amy W. K. [IQE, Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015 (United States)

2014-06-09T23:59:59.000Z

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


401

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect (OSTI)

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

402

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

403

AlP/GaP distributed Bragg reflectors  

SciTech Connect (OSTI)

Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

2013-07-15T23:59:59.000Z

404

Graphene/GaN diodes for ultraviolet and visible photodetectors  

SciTech Connect (OSTI)

The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

2014-08-18T23:59:59.000Z

405

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network [OSTI]

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

406

Electric field engineering in GaN high electron mobility transistors  

E-Print Network [OSTI]

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

407

Site-controlled fabrication of Ga nanodroplets by focused ion beam  

SciTech Connect (OSTI)

Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2014-03-31T23:59:59.000Z

408

Device-level thermal analysis of GaN-based electronics  

E-Print Network [OSTI]

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

409

Light extraction in individual GaN nanowires on Si for LEDs  

E-Print Network [OSTI]

GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

Zhou, Xiang

410

High performance double pulse doped pseudomorphic AlGaAs/InGaAs transistors grown by molecular-beam epitaxy  

SciTech Connect (OSTI)

Double pulse doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors have been grown by molecular-beam epitaxy on GaAs substrates. Hall mobilities in excess of 7100 cm{sup 2}/V s at 300 K and 25000 cm{sup 2}/V s at 77 K are obtained with a sheet density of 3 x 10{sup 12} cm{sup {minus}2}. Photoluminescence measurements indicate that two electronic subbands are occupied, and the subband energies are determined. The doping pulses are resolved in secondary ion mass spectrometry measurements. Using a double recess process, transistors have been fabricated that have produced state of the art microwave performance. At 10 GHz a 1.2 mm device has simultaneously achieved a power added efficiency of 70%, output power of 0.97 W, and gain of 10 dB. 17 refs., 5 figs., 1 tab.

Hoke, W.E.; Lyman, P.S.; Labossier, W.H.; Brierley, S.K.; Hendriks, H.T.; Shanfield, S.R.; Aucoin, L.M.; Kazior, T.E. [Raytheon Research Division, Lexington, MA (United States)] [Raytheon Research Division, Lexington, MA (United States)

1992-05-01T23:59:59.000Z

411

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures  

SciTech Connect (OSTI)

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

2009-06-08T23:59:59.000Z

412

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-04-21T23:59:59.000Z

413

Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence  

SciTech Connect (OSTI)

We present an investigation of the degradation of InGaN/GaN laser diodes grown on a GaN substrate. The results indicate that: (i) Ageing induces a significant increase in the threshold current (Ith) of the lasers, which is attributed to an increase in non-radiative recombination; (ii) Ith increase is correlated to a decrease in the micro-cathodoluminescence signal measured (after the removal of the top metallization) in the region under the ridge; (iii) micro-photoluminescence measurements indicate that constant current stress increases non-radiative recombination within the quantum wells (and not only within the barriers), and induces an increase in the emission wavelength of the degraded region.

Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Carraro, S.; Meneghesso, G.; Trivellin, N.; Zanoni, E. [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy)] [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy); Mura, G. [University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy)] [University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy); Rossi, F.; Salviati, G. [IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy)] [IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Holc, K.; Weig, T.; Wagner, J. [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany)] [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany); Schade, L.; Karunakaran, M. A. [IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)] [IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany); Schwarz, U. T. [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany) [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany); IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)

2013-12-02T23:59:59.000Z

414

Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells  

SciTech Connect (OSTI)

We demonstrate THz intersubband absorption (15.6–26.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

Edmunds, C.; Malis, O., E-mail: omalis@purdue.edu [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Shao, J. [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Shirazi-HD, M. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, M. J. [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2014-07-14T23:59:59.000Z

415

ROAD MAP FOR DEVELOPMENT OF CRYSTAL-TOLERANT HIGH LEVEL WASTE GLASSES  

SciTech Connect (OSTI)

The U.S. Department of Energy (DOE) is building a Tank Waste Treatment and Immobilization Plant (WTP) at the Hanford Site in Washington to remediate 55 million gallons of radioactive waste that is being temporarily stored in 177 underground tanks. Efforts are being made to increase the loading of Hanford tank wastes in glass while meeting melter lifetime expectancies and process, regulatory, and product quality requirements. This road map guides the research and development for formulation and processing of crystaltolerant glasses, identifying near- and long-term activities that need to be completed over the period from 2014 to 2019. The primary objective is to maximize waste loading for Hanford waste glasses without jeopardizing melter operation by crystal accumulation in the melter or melter discharge riser. The potential applicability to the Savannah River Site (SRS) Defense Waste Processing Facility (DWPF) will also be addressed in this road map. The planned research described in this road map is motivated by the potential for substantial economic benefits (significant reductions in glass volumes) that will be realized if the current constraints (T1% for WTP and TL for DWPF) are approached in an appropriate and technically defensible manner for defense waste and current melter designs. The basis of this alternative approach is an empirical model predicting the crystal accumulation in the WTP glass discharge riser and melter bottom as a function of glass composition, time, and temperature. When coupled with an associated operating limit (e.g., the maximum tolerable thickness of an accumulated layer of crystals), this model could then be integrated into the process control algorithms to formulate crystal-tolerant high-level waste (HLW) glasses targeting high waste loadings while still meeting process related limits and melter lifetime expectancies. The modeling effort will be an iterative process, where model form and a broader range of conditions, e.g., glass composition and temperature, will evolve as additional data on crystal accumulation are gathered. Model validation steps will be included to guide the development process and ensure the value of the effort (i.e., increased waste loading and waste throughput). A summary of the stages of the road map for developing the crystal-tolerant glass approach, their estimated durations, and deliverables is provided.

Fox, K.; Peeler, D.; Herman, C.

2014-05-15T23:59:59.000Z

416

HCEI Road Map and Introduction and Overview 2011 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Career Scientists'Montana.ProgramJulietip sheetK-4In 2013 many autoThis road map is a summary of the

417

The Road to Hydrogen--Challenges Ahead in Technology and Manufacturing |  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion |Energy Usage »of EnergyThe Energy DepartmentCategory 2 NuclearThe Road to Hiroshima

418

The Road to Improved Heavy Duty Fuel Economy | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion |Energy Usage »of EnergyThe Energy DepartmentCategory 2 NuclearThe Road to HiroshimaThe

419

The Road to Net Zero (Presentation), NREL (National Renewable Energy Laboratory)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism in Layered NbS2 andThe MolecularPlaceThe Road to Net Zero Bill Glover

420

Road Blocks Yield Key Information about a Catalyst | The Ames Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 -the Mid-Infrared0 Resource Program September DepartmentRioRisk2Road Blocks Yield

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they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


421

Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes  

SciTech Connect (OSTI)

The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

2014-10-27T23:59:59.000Z

422

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect (OSTI)

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Université, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

423

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect (OSTI)

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

424

1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m?{center_dot}cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW{center_dot}cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

Zhu, Mingda [University of Notre Dame, IN (United States); Song, Bo [Cornell University, Ithaca, NY (United States); Qi, Meng [University of Notre Dame, IN (United States); Hu, Zongyang [University of Notre Dame, IN (United States); Nomoto, Kazuki [University of Notre Dame, IN (United States); Yan, Xiaodong [University of Notre Dame, IN (United States); Cao, Yu [IQE/HRL Labs; Johnson, Wayne [IQE, Westborough, MA (United States); Kohn, Erhard [University of Notre Dame, IN (United States); Jena, Debdeep [Cornell University, Ithaca, NY (United States); Xing, Grace Huili [Cornell University, Ithaca, NY (United States)

2015-04-01T23:59:59.000Z

425

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a  

E-Print Network [OSTI]

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

Woodall, Jerry M.

426

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

427

Hexagonal Growth Spirals on GaN Grown by Molecular Beam Epitaxy: Kinetics vs Thermodynamics  

E-Print Network [OSTI]

prepared, Ga-polar GaN(0001) templates. The surface morphology was studied using reflection high-energy-edge energy of 0.26 eV/Ã?. They suggest that local conditions at step edges dominate the growth. 1 conducted ex situ using AFM. Desorption mass spectrometry (DMS) was used to measure the GaN growth rate. Our

Cohen, Philip I.

428

Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a  

E-Print Network [OSTI]

is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

Okamoto, Koichi

429

TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron  

E-Print Network [OSTI]

neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

430

Free carrier induced spectral shift for GaAs filled metallic hole arrays  

E-Print Network [OSTI]

. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

New Mexico, University of

431

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network [OSTI]

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

432

Properties of H, O and C in GaN  

SciTech Connect (OSTI)

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

1996-04-01T23:59:59.000Z

433

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical  

E-Print Network [OSTI]

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me · New ambition of GamificationU (Top-20 Eng/Tech*) ·

Iosup, Alexandru

434

Ohmic contacts to p-type GaP  

E-Print Network [OSTI]

thickness used in this scheme. The samples were annealed for I @n at temperatures ranging from 3 5 0 to 4 5 0 'C. Lower values of the contact resistivity than those of the Si/Pd/Zn/Pd/p-GaP scheme were achieved by depositing an Aluminum layer on the top...

Jorge Estevez, Humberto Angel

1996-01-01T23:59:59.000Z

435

Gallium Arsenide (GaAs) EDWARD D. PALIK  

E-Print Network [OSTI]

constants of pure (semi-insulating) GaAs are derived from a number of papers including the far-infrared at. [4]; the near-IR work of Pikhtin and Yas'kov [5]; the calorim- etry work of Christensen et al. [6 reflection work of Philipp and Ehrenreich [9]; and the synchrotron transmission work of Cardona et al. [10

Pulfrey, David L.

436

Theory of weak localization in ferromagnetic (Ga,Mn)As  

E-Print Network [OSTI]

We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

2009-01-01T23:59:59.000Z

437

Response of GaAs to fast intense laser pulses  

E-Print Network [OSTI]

Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight...

Graves, JS; Allen, Roland E.

1998-01-01T23:59:59.000Z

438

Recombination in Low-Bandgap InGaAs  

SciTech Connect (OSTI)

We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

Gfroerer, T. H.; Wanlass, M. W.

2006-01-01T23:59:59.000Z

439

Ballistic thermal point contacts made of GaAs nanopillars  

SciTech Connect (OSTI)

We measure the thermal conductance of GaAs pillars that are only a few nanometers long. Our observations can be understood with a simple model, in which the pillars constitute thermal point contacts between 3D phonon reservoirs. Moreover, first measurements of the electronic transport through these pillars are presented.

Bartsch, Th.; Wetzel, A.; Sonnenberg, D.; Schmidt, M.; Heyn, Ch.; Hansen, W. [Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg (Germany)

2013-12-04T23:59:59.000Z

440

GA Tech Campus Emergency Response Team STANDARD OPERATING PROCEDURE  

E-Print Network [OSTI]

GA Tech Campus Emergency Response Team GT-CERT STANDARD OPERATING PROCEDURE 09/29/2010 #12;2 Table as a condition for the appointment and continuing maintenance of membership. GT-CERT members operate for and to respond to emergency/disaster situations. 2.0 Purpose To establish procedures for the activation

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

High-quality InP on GaAs  

E-Print Network [OSTI]

In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

Quitoriano, Nathaniel Joseph

2006-01-01T23:59:59.000Z

442

Business address : Athens University of Economics and Business 76, Patision St., 104 34, Athens  

E-Print Network [OSTI]

the Impact of ,,Liberalisation on Auditor Behaviour: Accounting Research in Politically Charged Contexts of Liberalisation on Auditor Behaviour", European Accounting Review (ABS 3), 1997, Vol. 6: 1, 1997, pp. 85

Chatziantoniou, Damianos

443

Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films  

SciTech Connect (OSTI)

We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

2007-08-15T23:59:59.000Z

444

Testing a GaAs cathode in SRF gun  

SciTech Connect (OSTI)

RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

2011-03-28T23:59:59.000Z

445

Modeling hydrology and reactive transport in roads: The effect of cracks, the edge, and contaminant properties  

SciTech Connect (OSTI)

The goal of this research was to provide a tool for regulators to evaluate the groundwater contamination from the use of virgin and secondary materials in road construction. A finite element model, HYDRUS2D, was used to evaluate generic scenarios for secondary material use in base layers. Use of generic model results for particular applications was demonstrated through a steel slag example. The hydrology and reactive transport of contaminants were modeled in a two-dimensional cross section of a road. Model simulations showed that in an intact pavement, lateral velocities from the edge towards the centerline may transport contaminants in the base layer. The dominant transport mechanisms are advection closer to the edge and diffusion closer to the centerline. A shoulder joint in the pavement allows 0.03 to 0.45 m{sup 3}/day of infiltration per meter of joint length as a function of the base and subgrade hydrology and the rain intensity. Scenario simulations showed that salts in the base layer of pavements are depleted by 99% in the first 20 years, whereas the metals may not reach the groundwater in 20 years at any significant concentrations if the pavement is built on adsorbing soils.

Apul, Defne S. [Department of Civil Engineering, University of Toledo, 2801 W. Bancroft St., Mail Stop 307, Toledo, OH 43606 (United States)], E-mail: Defne.apul@utoledo.edu; Gardner, Kevin H. [Environmental Research Group, Department of Civil Engineering, 35 Colovos Road, Durham, NH 03824 (United States)], E-mail: Kevin.gardner@unh.edu; Eighmy, T. Taylor [Environmental Research Group, Department of Civil Engineering, 35 Colovos Road, Durham, NH 03824 (United States)], E-mail: Taylor.eighmy@unh.edu

2007-07-01T23:59:59.000Z

446

Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method  

SciTech Connect (OSTI)

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

2014-03-15T23:59:59.000Z

447

Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor  

SciTech Connect (OSTI)

An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Li, Jiadong; Miao, Bin; Wu, Dongmin, E-mail: dmwu2008@sinano.ac.cn [i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wang, Jine; Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China)

2014-08-25T23:59:59.000Z

448

Quaternary InGaAsSb Thermophotovoltaic Diodes  

SciTech Connect (OSTI)

In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

2006-03-09T23:59:59.000Z

449

Environmental Survey Report for the ETTP: Environmental Management Waste Management Facility (EMWMF) Haul Road Corridor, Oak Ridge, Tennessee  

SciTech Connect (OSTI)

This report summarizes the results of environmental surveys conducted within the corridor of a temporary haul road (''Haul Road'') to be constructed from East Tennessee Technology Park (ETTP) to the Environmental Management Waste Management Facility (EMWMF) located just west of the Y-12 National Security Complex (Y-12). Environmental surveys were conducted by natural resource experts at Oak Ridge National Laboratory who routinely assess the significance of various project activities on the Oak Ridge Reservation (ORR). ORNL assistance to the Haul Road Project included environmental assessments necessary to determine the best route for minimizing impacts to sensitive resources such as wetlands or rare plants. Once the final route was chosen, environmental surveys were conducted within the corridor to evaluate the impacts to sensitive resources that could not be avoided. The final Haul Road route follows established roads and a power-line corridor to the extent possible (Fig. 1). Detailed explanation regarding the purpose of the Haul Road and the regulatory context associated with its construction is provided in at least two major documents and consequently is not presented here: (1) Explanation of Significant Differences for the Record of Decision for the Disposal of Oak Ridge Reservation Comprehensive Environmental Response, Compensation, and Liability Act of 1980 Waste, Oak Ridge, Tennessee (January 2005, DOE/OR/01-2194&D2), and (2) Environmental Monitoring Plan for The ETTP to EMWMF Haul Road for the Disposal of Oak Ridge Reservation Comprehensive Environmental Response, Compensation, and Liability Act of 1980 Waste, Oak Ridge, Tennessee (April 2005, BJC/OR-2152). The focus of this report is a description of the sensitive resources to be impacted by Haul Road construction. Following a short description of the methods used for the environmental surveys, results and observations are presented in the following subsections: (1) General description of the affected environment; (2) Rare plants and vegetation assemblages; (3) Rare wildlife and their habitat; (4) Rare aquatic species; and (5) Wetlands/Floodplains. A summary of project actions taken or planned in order to avoid, minimize, or mitigate the environmental impacts associated with this project are summarized in the conclusion section of this report.

Peterson, M.J.

2005-12-20T23:59:59.000Z

450

Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells  

SciTech Connect (OSTI)

The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagonal pits (IHPs) are modified distinctly depending on the nature of their interaction with the metal NPs and with the pumping and emitted photons. It is observed that the emission intensity of light is significantly enhanced when the emission energy is off-resonant to the localized plasmon frequency of the metal nanoparticles. This results in enhanced emission from MQW due to Au nanoparticles and from IHPs due to Ag nanoparticles. At resonant-plasmon frequency of the Ag NPs, the emission from MQWs is quenched due to the re-absorption of the emitted photons, or due to the drift carriers from c-plane MQWs towards the NPs because of the Coulomb forces induced by the image charge effect.

Lin, Jie; Llopis, Antonio; Krokhin, Arkadii; Neogi, Arup, E-mail: arup@unt.edu [Department of Physics, University of North Texas, Denton, Texas 76203 (United States); Pereira, Sergio [CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Watson, Ian M. [SUPA, Institute of Photonics, University of Strathclyde, Glasgow (United Kingdom)

2014-06-16T23:59:59.000Z

451

Projected Performance of Three- and Four-Junction Devices Using GaAs and GaInP  

E-Print Network [OSTI]

This paper explores the efficiencies expected for three- and four-junction devices for both space and terrestrial applications. For space applications, the effects of temperature and low concentration are investigated. For terrestrial applications, a concentration of 500 suns is assumed and the theoretical efficiencies are calculated as a function of spectral variations including the effects of air mass, turbidity, and water-vapor content. INTRODUCTION Ga 0.5 In 0.5 P/GaAs two-terminal, two-junction solar cells, invented and developed at the National Renewable Energy Laboratory, are in production at both TECSTAR and Spectrolab. The immediate market for these devices is in space; a future (potentially larger) market is terrestrial concentrator systems. The next-generation cells will add additional junction(s) in order to increase the efficiency. Work on a three-junction cell using an active Ge junction under the Ga 0.5 In 0.5 P/GaAs dual-junction cell has already been reported [1]. Ho...

Gainp; S. R. Kurtz; Sarah R. Kurtz; D. Myers; D. Myers; J.M. Olson; J. M. Olson

1997-01-01T23:59:59.000Z

452

Electrical, thermal, and species transport properties of liquid eutectic Ga-In and Ga-In-Sn from first principles  

SciTech Connect (OSTI)

Using ab initio molecular dynamics, the atomic structure and transport properties of eutectic Ga-In and Ga-In-Sn are investigated. The Kubo-Greenwood (K-G) and the Ziman-Faber (Z-F) formulations and the Wiedemann-Franz (W-F) law are used for the electrical and electronic thermal conductivity. The species diffusivity and the viscosity are also predicted using the mean square displacement and the Stokes-Einstein (S-E) relation. Alloying Ga causes more disordered structure, i.e., broadening the atomic distance near the In and Sn atoms, which reduces the transport properties and the melting temperature. The K-G treatment shows excellent agreement with the experimental results while Z-F treatment formula slightly overestimates the electrical conductivity. The predicted thermal conductivity also shows good agreement with the experiments. The species diffusivity and the viscosity are slightly reduced by the alloying of Ga with In and Sn atoms. Good agreements are found with available experimental results and new predicted transport-property results are provided.

Yu, Seungho; Kaviany, Massoud, E-mail: kaviany@umich.edu [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)] [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-02-14T23:59:59.000Z

453

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

454

Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

Bia?ek, M., E-mail: marcin.bialek@fuw.edu.pl; Witowski, A. M.; Grynberg, M.; ?usakowski, J. [Faculty of Physics, University of Warsaw, ul. Ho?a 69, 00-681 Warsaw (Poland); Orlita, M.; Potemski, M. [Laboratoire National des Champs Magnetiques Intenses, CNRS-UJF-UPS-INSA, 25, avenue des Martyrs, 38042 Grenoble (France); Czapkiewicz, M. [Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw (Poland); Wróbel, J. [Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw (Poland); Faculty of Mathematics and Natural Sciences, Rzeszów University, al. Rejtana 16A, 35-959 Rzeszów (Poland); Umansky, V. [Weizmann Institute of Science, Rehevot 76100 (Israel)

2014-06-07T23:59:59.000Z

455

Ultra High p-doping Material Research for GaN Based Light Emitters  

SciTech Connect (OSTI)

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

Vladimir Dmitriev

2007-06-30T23:59:59.000Z

456

On-Road Emissions in Asia Measured by Remote Sensing. Donald H. Stedman and Gary A. Bishop,University of Denver, Department of Chemistry and  

E-Print Network [OSTI]

On-Road Emissions in Asia Measured by Remote Sensing. Donald H. Stedman and Gary A. Bishop Analysis, Tiburon, California 94920 ABSTRACT On-road emissions are precisely the emissions which sensing measures mass emissions of CO, HC, NO and smoke per kg (or per L) of fuel burned. On

Denver, University of

457

Green College,The University of British Columbia 6201 Cecil Green Park Road,Vancouver, BCV6T 1Z1  

E-Print Network [OSTI]

Green College,The University of British Columbia 6201 Cecil Green Park Road,Vancouver, BCV6T 1Z1 604.822.8660 gc.events@ubc.ca www.greencollege.ubc.ca @GreenCollegeUBC ALLTALKS ARE ATTHE COACH HOUSE, GREEN COLLEGE, 6201 CECIL GREEN PARK ROAD AND ARE OPEN TOTHE PUBLICWITHOUT CHARGE. PLEASE ARRIVE EARLYTO

Handy, Todd C.

458

Upon leaving the airport on Airport Road continue 1.1 miles. Turn right on Garfield Ave. (US Hwy 14 truck route) and continue 1.0 mile.  

E-Print Network [OSTI]

until Trailrace Rd. Turn left to Powerhouse Rd. Turn left into the Corps of Engineers complexAve Capitol AveSioux Ave Dakota Ave Tailrace Rd 83 1804 1804 PowerhouseR d 1806 34 14 1806 34 14 83 14 BYP 14 28563 Powerhouse Road Pierre Field Office 28563 Powerhouse Road #12;

459

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate  

SciTech Connect (OSTI)

The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

Christy, Dennis; Watanabe, Arata; Egawa, Takashi [Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya, 466-8555 (Japan)

2014-10-15T23:59:59.000Z

460

GaAsSb-based heterojunction tunnel diodes for tandem solar cell interconnects  

SciTech Connect (OSTI)

We report a new approach to tunnel junctions that employs a pseudomorphic GaAsSb layer to obtain a band alignment at a InGaAs or InAlAs p-n junction favorable for forward bias tunneling. Since the majority of the band offset between GaAsSb and InGaAs or InAlAs is in the valence band, when an GaAsSb layer is placed at an InGaAs or InAlAs p-n junction the tunneling distance is reduced and the tunneling current is increased. For all doping levels studied, the presence of the GaAsSb-layer enhanced the forward tunneling characteristics. In fact, in a InGaAs/GaAsSb tunnel diode a peak tunneling current sufficient for a 1000 sun intercell interconnect was achieved with p = 1.5{times}l0{sup 18} cm{sup -3} while a similarly doped all-InGaAs diode was rectifying. This approach affords a new degree of freedom in designing tunnel junctions for tandem solar cell interconnects. Previously only doping levels could be varied to control the tunneling properties. Our approach relaxes the doping requirements by employing a GaAsSb-based heterojunction.

Zolper, J.C.; Klem, J.F.; Plut, T.A.; Tigges, C.P.

1995-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Located between Snyder Hill Road and Ellis Hollow Road, this precinct is at the periphery of the main campus and is home to the research facilities used by the College of Veterinary  

E-Print Network [OSTI]

barrier between Snyder Hill Road and the Baker Lab complex. · The Cornell University Natural Areas should dominate the core of the complex and development in this area should consider the design and placement of Veterinary Medicine and Laboratory Animal Sciences. . · Pastures should be protected and reserved for use

Chen, Tsuhan

462

E-Print Network 3.0 - area glare sources Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

...2 C. Cherokee County, Georgia's Outdoor Lighting and Road Glare Ordinance... County, Ga., Outdoor...

463

Bending properties of epoxy resin matrix composites filled with NiMnGa ferromagnetic shape memory alloy powders  

E-Print Network [OSTI]

Bending properties of epoxy resin matrix composites filled with Ni­Mn­Ga ferromagnetic shape memory­Mn­Ga Composite materials Mechanical properties Microstructure Two types of epoxy resin matrix composites filled­Mn­Ga epoxy resin composites were reported, yet the bending property of Ni­Mn­Ga-polymer smart composites has

Zheng, Yufeng

464

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network [OSTI]

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

465

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density  

E-Print Network [OSTI]

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

Chen, Zhi

466

IEEE TRANSACTIONS ON INTELLIGENT TRANSPORTATION SYSTEMS, VOL. 6, NO. 2, JUNE 2005 125 On-Road Vehicle Detection Using Evolutionary  

E-Print Network [OSTI]

speed, and high cost. Moreover, when there is a large number of vehicles moving simultaneously-Road Vehicle Detection Using Evolutionary Gabor Filter Optimization Zehang Sun, Member, IEEE, George Bebis, Member, IEEE, and Ronald Miller Abstract--Robust and reliable vehicle detection from images acquired

Bebis, George

467

Developing the Fuels of the Future Road transport accounts for 21% of the CO2 emissions of the UK  

E-Print Network [OSTI]

Developing the Fuels of the Future ·Road transport accounts for 21% of the CO2 emissions of the UK required to develop new fuels, reducing NOx, CO2, unburned hydrocarbons and particulates. All new secondary Where : ·One of the most important properties of a fuel. Affects many aspects of combustion. ·Defined

468

Limiting sediment deposition on roadways: topographic controls on vulnerable roads and cost analysis of planting grass buffer  

E-Print Network [OSTI]

Limiting sediment deposition on roadways: topographic controls on vulnerable roads and cost and summer storms lead to large scale sediment deposition on roadways, and cleanup costs are a major concern characteristics which control sediment deposition on roadways in order to compare the cost of planting grass

Boyer, Edmond

469

New active safety device dedicated to light all-terrain vehicle stability: Application to quad bike and off-road  

E-Print Network [OSTI]

. It consists in using Predictive Functional Control (PFC) so as to compute, on-line, the maximum vehicle and braking control [3] and [2]), they appear to be poorly relevant for fast off-road motion context (since]. It consists in the on-line adaptation of tire cornering stiffnesses, representative of grip conditions, based

Boyer, Edmond

470

Project Description In the search for superior batteries, the road to success is paved with advanced materials: better  

E-Print Network [OSTI]

Project Description In the search for superior batteries, the road to success is paved with advanced materials: better cathodes, better anodes, better electrolytes. The universe of candidates is so of this proposal is that by leveraging the advances in informatics and high-throughput experimental

Sadoway, Donald Robert

471

Please use this map as a guide on the road to finding services and supports for your child and family  

E-Print Network [OSTI]

health, home health care, and hospitals and clinics in the Adams County area. Education Family ConnectorsPlease use this map as a guide on the road to finding services and supports for your child and family The Wisconsin Division of Public Health, Children and Youth with Special Health Care Needs (CYSHCN

Wisconsin at Madison, University of

472

On-Road Vehicle Detection: A Review Zehang Sun, Member, IEEE, George Bebis, Member, IEEE, and Ronald Miller  

E-Print Network [OSTI]

On-Road Vehicle Detection: A Review Zehang Sun, Member, IEEE, George Bebis, Member, IEEE about driving environments, and possible collision with other vehicles has attracted a lot of attention lately. In these systems, robust and reliable vehicle detection is a critical step. This paper presents

Bebis, George

473

Colorado Cattlemen's Agricultural Land Trust 8833 Ralston Road Arvada, Colorado 80002 303-225-8677 www.ccalt.org  

E-Print Network [OSTI]

Colorado Cattlemen's Agricultural Land Trust 8833 Ralston Road · Arvada, Colorado 80002 · 303-225-8677 · www.ccalt.org About Colorado Cattlemen's Agricultural Land Trust The Colorado Cattlemen's Agricultural Land Trust (CCALT) was formed in 1995 by the membership of the Colorado Cattlemen's Association (CCA

Lawrence, Rick L.

474

Planning your business: The Business Plan A business plan is like a road map for your business. Careful  

E-Print Network [OSTI]

Planning your business: The Business Plan A business plan is like a road map for your business. Careful planning is key to any successful business. A business plan ensures that resources are available, including (time, money, and opportunities). It helps you decide where you want to go with the business

475

U.S. Fusion Road Map Study D. Meade, A. Garofalo, D. Hill, C. Kessel, B. Lipschultz(D. Whyte),  

E-Print Network [OSTI]

and assess three aggressive technically feasible paths for the US Fusion Program mo). - Technical Readiness Levels - EU Road Map used TRLs for materials and technology - NAS IFE Assessment 2013 Power Plant (FPP) - Use recent ARIES Study to define general characteristics of DEMO/FPP - Mission

476

ARMO: Adaptive Road Map Optimization for Large Robot Teams Alexander Kleiner*, Dali Sun* and Daniel Meyer-Delius*  

E-Print Network [OSTI]

in static environments [4] that compute during a pre-processing phase a connectivity graph in freeARMO: Adaptive Road Map Optimization for Large Robot Teams Alexander Kleiner*, Dali Sun* and Daniel Meyer-Delius* Abstract-- Autonomous robot teams that simultaneously dis- patch transportation tasks

Nebel, Bernhard

477

Detection of Defects in Road Surface by a Vision N. T. Sy M. Avila, S. Begot and J. C. Bardet  

E-Print Network [OSTI]

. Bardet PRISME Institute-MCDS Team - Orleans University - IUT Chateauroux - France ) Vectra Road on a set of image processing tasks : bi-level thresholding, morphological operation, and projection. The method have been tested on three kinds of images: the first ones are images taken in laboratory in static

Paris-Sud XI, Université de

478

What is at the end of the road? Understanding discontinuities of on-street bicycle lanes in urban settings  

E-Print Network [OSTI]

What is at the end of the road? Understanding discontinuities of on-street bicycle lanes in urban-street bicycle facilities is often mentioned as an important strategy to encourage increased bicycle safety and bicycle travel. However, little if any literature has focused on instances where separate on- street

Levinson, David M.

479

Method of plasma etching Ga-based compound semiconductors  

DOE Patents [OSTI]

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Qiu, Weibin; Goddard, Lynford L.

2012-12-25T23:59:59.000Z

480

Method of plasma etching GA-based compound semiconductors  

DOE Patents [OSTI]

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

Qiu, Weibin; Goddard, Lynford L.

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "road athens ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Study of reflection and transport in the microwave photo-excited GaAs/AlGaAs two dimensional electron system  

SciTech Connect (OSTI)

We present the results of a concurrent experimental study of microwave reflection and transport in the GaAs/AlGaAs two dimensional electron gas system and correlate observed features in the reflection with the observed transport features. The experimental results are compared with expectations based on theory.

Ye, Tianyu; Mani, Ramesh G. [Department of Physics and Astronomy, Georgia State University, Atlanta GA 30303 (United States); Wegscheider, Werner [Laboratorium für Festkörperphysik, ETH Zürich, 8093 Zürich (Switzerland)

2013-12-04T23:59:59.000Z

482

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a  

E-Print Network [OSTI]

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C Richard R. King,2 and Harry A. Atwater1 1 California Institute of Technology, Pasadena, California 91125, USA 2 Spectrolab, Inc., Sylmar, California 91342, USA 3 Aonex Technologies, Pasadena, California 91106

Atwater, Harry

483

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS  

E-Print Network [OSTI]

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS Robyn C. Law 1 1 Spectrolab, Inc., A Boeing Company, Sylmar, California 91342, USA 2 California Institute of Technology, Pasadena, California 91125, USA ABSTRACT Spectrolab has demonstrated the first lattice matched In

Atwater, Harry

484

Ga lithography in sputtered niobium for superconductive micro and nanowires  

SciTech Connect (OSTI)

This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12?nm deep with a 14?nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10??m by 10??m and 100??m by 100??m, demonstrate that doses above than 7.5?×?10{sup 15?}cm{sup ?2} at 30?kV provide adequate mask protection for a 205?nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75?nm wide by 10??m long connected to 50??m wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c})?=?7.7?K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert [Sandia National Labs, MESA Facility, P.O. Box 5800, Albuquerque, New Mexico 87185-1084 (United States)

2014-08-18T23:59:59.000Z

485

InGaAsSb thermophotovoltaic diode physics evaluation  

SciTech Connect (OSTI)

The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

1998-06-01T23:59:59.000Z

486

GaSb substrates with extended IR wavelength for advanced space based applications  

SciTech Connect (OSTI)

GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 m. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 m with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

Allen, Lisa P.; Flint, Patrick; Dallas, Gordon; Bakken, Daniel; Blanchat, Kevin; Brown, Gail J.; Vangala, Shivashankar R.; Goodhue, William D.; Krishnaswami, Kannan

2009-05-01T23:59:59.000Z

487

Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate  

SciTech Connect (OSTI)

Simultaneous growth of ?111?{sub B} free-standing and ±[110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy (111){sub B} interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain (111){sub B} interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side (111){sub B} interfaces with the surrounding GaAs(P) material during the lateral nanowire growth.

Sun, Wen; Xu, Hongyi [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia)] [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Guo, Yanan [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Gao, Qiang; Hoe Tan, Hark; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)] [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Zou, Jin, E-mail: j.zou@uq.edu.au [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia QLD 4072 (Australia)

2013-11-25T23:59:59.000Z

488

Theoretical comparison of multiple quantum wells and thick-layer designs in InGaN/GaN solar cells  

SciTech Connect (OSTI)

This theoretical work analyzes the photovoltaic effect in non-polar InGaN/GaN solar cells. Our electronic transport model considers quantum behaviors related to confinement, tunneling, electron-phonon, and electron-photon scatterings. Based on this model, we compare a multiple quantum wells cell with its thick-layer counterpart. We show that the structure of multiple quantum wells is a promising design providing better compromise between photon-absorption and electronic transport. This balance is necessary since these two phenomena are shown to be antagonist in nanostructure based solar cells. In these devices, we also show that phonon absorption increases the short-circuit current, while phonon emission reduces the open-circuit voltage.

Cavassilas, Nicolas; Michelini, Fabienne; Bescond, Marc [Aix Marseille Univ, CNRS, IM2NP UMR 7334, 13384 Marseille (France)

2014-08-11T23:59:59.000Z

489

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes  

SciTech Connect (OSTI)

We model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=An+Bn{sup 2} +Cn{sup 3} +f(n) , where f(n) represents carrier leakage out of the active region. The term f(n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f(n) leakage contribution and an Auger contribution) is found to be 8×10{sup ?29} ?cm{sup 6} ?s{sup ?1} . Comparison of the theoretical ABC+f(n) model with experimental data shows that a good fit requires the inclusion of the f(n) term.

Dai, Qi; Shan, Qifeng; Wang, Jing; Chhajed, Sameer; Cho, Jaehee; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.; Kim, Min-Ho; Park, Yongjo

2010-01-01T23:59:59.000Z

490

Carrier-induced change in refractive index of InP, GaAs, and InGaAsP  

SciTech Connect (OSTI)

The authors have theoretically estimated the change in refractive index {Delta}{ital n} produced by injection of free carriers in InP, GaAs, and InGaAsP. Bandfilling (Burstein-Moss effect), band-gap shrinkage, and free-carrier absorption (plasma effect) were included. Carrier concentrations of 10{sup 16}/cm{sup 3} to 10{sup 19}/cm{sup 3} and photon energies of 0.8 to 2.0 eV were considered. Predictions of {Delta}{ital n} are in reasonably good agreement with the limited experimental data available. Refractive index changes as large as 10{sup {minus} 2} are predicted for carrier concentrations of 10{sup 18}/cm{sup 3}, suggesting that low-loss optical phase modulators and switches using carrier injection are feasible in these materials.

Bennett, B.R. (Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA (US)); Soref, R.A. (Solid State Sciences Directorate, Rome Air Development Center, Hanscom Air Force Base, Bedford, MA (US)); Del Alamo, J.A. (Dept. of Electrical Engineering and Computer Science, Massachussets Institute of Technology, Cambridge, MA (US))

1990-01-01T23:59:59.000Z

491

Sensitivity of absorption spectra to surface segregation in InGaN/GaN quantum well structures  

SciTech Connect (OSTI)

We investigate the influence of the indium surface segregation on absorption spectra in InGaN/GaN quantum well structures having different indium amount. Results of the mathematical modeling show that such influence is more pronounced in quantum well structures with high indium amounts. The origin of this effect is related to the interplay between the indium surface segregation and internal electrostatic fields. Our theoretical analysis is performed using semiconductor Bloch equations within the Hartree-Fock approximation including into consideration excitonic effects. Results of the global sensitivity analysis evidence that the influence of the indium surface segregation is less than one order of magnitude in comparison with the impact of the quantum-well width and indium molar fraction. Also, the influence of the indium surface segregation is not the same for each interface of the quantum well.

Klymenko, M. V.; Shulika, O. V. [Lab. Photonics, Kharkov National University of Radio Electronics, Kharkov, 61166 (Ukraine); Sukhoivanov, I. A. [Department of Electronics, Engineering Division, University of Guanajuato, Salamanca, Guanajuato, 36885 (Mexico)

2014-05-15T23:59:59.000Z

492

Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes  

SciTech Connect (OSTI)

We report the characteristics of phosphor-free self-organized InGaN/GaN quantum dot wavelength converter white light emitting diodes grown by plasma assisted molecular beam epitaxy. The exciting quantum dots, in which electrically injected carriers recombine, are blue-emitting and the converter dots are red-emitting. We have studied the effect of tuning the number of dot layers and the peak emission wavelength of the exciting and converter dots on the nature of the emitted white light, in terms of the chromaticity coordinates and correlated color temperature. Depending on the values of these wavelengths, color temperatures in the range of 4420–6700?K have been derived at a current density of 45?A/cm{sup 2} across multiple devices. The variation of the color temperature with change in injection current is found to be very small.

Jahangir, Shafat; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States); Pietzonka, Ines; Strassburg, Martin [OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, Regensburg (Germany)

2014-09-15T23:59:59.000Z

493

ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures  

SciTech Connect (OSTI)

Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial layer of InP served as a reservoir for laser generated defects. The irradiation with up to 90 pulses at 65-150 mJ/cm{sup 2} allowed to generate an array of 1.2x1 mm{sup 2} sites of QW intermixed material, with bandgap energy blueshifted up to 107 nm. We discuss the mechanism and advantages of this approach for postgrowth wafer level fabrication of multibandgap QW material.

Genest, Jonathan; Beal, Romain; Aimez, Vincent; Dubowski, Jan J. [Department of Electrical and Computer Engineering, Center of Excellence for Information Engineering, Universite de Sherbrooke, Sherbrooke, Quebec J1K 2R1 (Canada)

2008-08-18T23:59:59.000Z

494

DOE Statement on UK Government's "Road to 2010" Report on Nuclear Security  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of EnergyEnergyENERGYWomentheATLANTA, GA - U.S. Department ofThe U.S. DepartmentContractMeeting -2014|

495

X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure  

SciTech Connect (OSTI)

High-resolution X-ray diffraction analysis and scanning confocal Raman spectroscopy are used to study the spatial distribution of strains in the In{sub x}Ga{sub 1-x}N/GaN layers and structural quality of these layers in a multilayered light-emitting diode structure produced by metal-organic chemical vapor deposition onto (0001)-oriented sapphire substrates. It is shown that elastic strains almost completely relax at the heterointerface between the thick GaN buffer layer and In{sub x}Ga{sub 1-x}N/GaN buffer superlattice. It is established that the GaN layers in the superlattice are in a stretched state, whereas the alloy layers are in a compressed state. In magnitude, the stretching strains in the GaN layers are lower than the compressive strains in the InGaN layers. It is shown that, as compared to the buffer layers, the layers of the superlattice contain a smaller number of dislocations and the distribution of dislocations is more randomly disordered. In micro-Raman studies on scanning through the thickness of the multilayered structure, direct evidence is obtained for the asymmetric gradient distributions of strains and crystal imperfections of the epitaxial nitride layers along the direction of growth. It is shown that the emission intensity of the In{sub x}Ga{sub 1-x}N quantum well is considerably (more than 30 times) higher than the emission intensity of the GaN barrier layers, suggesting the high efficiency of trapping of charge carriers by the quantum well.

Strelchuk, V. V., E-mail: Strelch@isp.kiev.ua; Kladko, V. P.; Avramenko, E. A.; Kolomys, O. F.; Safryuk, N. V.; Konakova, R. V. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine); Yavich, B. S., E-mail: byavich@soptel.ru [ZAO Svetlana-Optoelectronics (Russian Federation); Valakh, M. Ya.; Machulin, V. F.; Belyaev, A. E. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

2010-09-15T23:59:59.000Z

496

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors  

SciTech Connect (OSTI)

A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-03-10T23:59:59.000Z

497

Deep Levels in p-Type InGaAsN Lattice Matched to GaAs  

SciTech Connect (OSTI)

Deep level transient spectroscopy (DLTS) measurements were utilized to investigate deep level defects in metal-organic chemical deposition (MOCVD)-grown unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the bandgap, with a dominant hole trap at E{sub v} + 0.10 eV. Post-growth annealing simplified the deep level spectra, enabling the identification of three distinct hole traps at 0.10 eV, 0.23 eV, and 0.48 eV above the valence band edge, with concentrations of 3.5 x 10{sup 14} cm{sup {minus}3}, 3.8 x 10{sup 14} cm{sup {minus}3}, and 8.2 x 10{sup 14} cm{sup {minus}3}, respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4 x 10{sup 14} cm{sup {minus}3} in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future.

Allerman, A.A.; Jones, E.D.; Kaplar, R.J.; Kurtz, S.R.; Kwon, D.; Ringel, S.A.

1999-03-02T23:59:59.000Z

498

Avalanche buildup time of an InP/InGaAsP/InGaAs APD at high gain  

SciTech Connect (OSTI)

Under a high-gain operating condition, the presence of a multiplication process in the InGaAs(P) regions of an InP/InGaAsP/InGaAs avalanche photodiode having a structure of separated absorption and multiplication regions (SAM-APD) could lead to significant enhancement of the avalanche buildup time. As a result, the bandwidth of the device could be reduced considerably. The dependence of the avalanche multiplication factor and the intrinsic response time on the reverse bias voltage, the heterointerface field, the doping concentrations, and the width of the InP layer are examined in detail for the case in which hole injection is assumed. It is shown, for example, that for a fixed value of doping concentrations, the reduction of the excess noise factor and the enhancement of the gain-bandwidth product of the device can be made at the same time by a proper increase of the width of the InP layer.

Hsieh, H.C.; Sargeant, W. (Iowa State Univ. of Science and Technology, Ames, IA (USA). Dept. of Electrical Engineering)

1989-09-01T23:59:59.000Z

499

Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.  

SciTech Connect (OSTI)

GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.

Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

2005-12-01T23:59:59.000Z

500

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy  

SciTech Connect (OSTI)

Dilute nitride GaNAsP thin films were grown via a GaAsP metamorphic buffer on GaP(100) substrate with gas-source molecular beam epitaxy. The compositions of this III-V-V-V compound were determined by channeling Rutherford backscattering spectroscopy and nuclear reaction analysis. Photoreflectance shows two distinctive transitions from the valence band to the split conduction bands due to N incorporation. Photoluminescence and optical absorption show the fundamental bandgap of Ga(N)AsP is largely tailored by the small amount of N. The observed multiband characteristics and the bandgap tunability of GaNAsP are two merits that fit into the intermediate-band solar cell roadmap, and GaNAsP of high crystal quality provides a strong candidate for intermediate band solar cell materials.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Yu, K. M.; Walukiewicz, W. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)] [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kudrawiec, R. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Institute of Physics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw (Poland); Luce, A. V. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Ting, M. [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)] [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2013-03-18T23:59:59.000Z