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1

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES  

E-Print Network (OSTI)

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES S. Suresh1 , T.-G. Nieh2 and B.W. Choi2: Mechanical properties; Nano-indentation; Thin films; Copper; Dislocations Introduction Indentation methods films on substrates (e.g., [2,3]) using instrumented indentation. Nano-indentation studies of thin films

Suresh, Subra

2

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network (OSTI)

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

3

NREL: Energy Analysis - Crystalline Silicon and Thin Film Photovoltaic  

NLE Websites -- All DOE Office Websites (Extended Search)

Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Assessment Harmonization Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics (Fact Sheet) Cover of the Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics factsheet Download the Fact Sheet Over the last 30 years, hundreds of life cycle assessments (LCAs) have been conducted and published for a variety of residential and utility-scale solar photovoltaic (PV) systems with wide-ranging results. The inconsistencies in these results can be attributed to the technologies evaluated-such as differing system designs, real-world versus conceptual systems, or technology improvements over time-and life cycle assessment methods and assumptions. To better understand greenhouse gas (GHG) emissions from commercial

4

Formation of thin-film resistors on silicon substrates  

DOE Patents (OSTI)

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

1988-11-01T23:59:59.000Z

5

Silicon Oxynitride Thin Film Barriers for PV Packaging (Poster)  

DOE Green Energy (OSTI)

Dielectric, adhesion-promoting, moisture barriers comprised of silicon oxynitride thin film materials (SiOxNy with various material stoichiometric compositions x,y) were applied to: 1) bare and pre-coated soda-lime silicate glass (coated with transparent conductive oxide SnO2:F and/or aluminum), and polymer substrates (polyethylene terephthalate, PET, or polyethylene napthalate, PEN); plus 2) pre- deposited photovoltaic (PV) cells and mini-modules consisting of amorphous silicon (a-Si) and copper indium gallium diselenide (CIGS) thin-film PV technologies. We used plasma enhanced chemical vapor deposition (PECVD) process with dilute silane, nitrogen, and nitrous oxide/oxygen gas mixtures in a low-power (< or = 10 milliW per cm2) RF discharge at ~ 0.2 Torr pressure, and low substrate temperatures < or = 100(degrees)C, over deposition areas ~ 1000 cm2. Barrier properties of the resulting PV cells and coated-glass packaging structures were studied with subsequent stressing in damp-heat exposure at 85(degrees)C/85% RH. Preliminary results on PV cells and coated glass indicate the palpable benefits of the barriers in mitigating moisture intrusion and degradation of the underlying structures using SiOxNy coatings with thicknesses in the range of 100-200 nm.

del Cueto, J. A.; Glick, S. H.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

2006-10-03T23:59:59.000Z

6

Silicon-integrated thin-film structure for electro-optic applications  

DOE Patents (OSTI)

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

McKee, Rodney A. (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

7

Ambipolar charge transport in microcrystalline silicon thin-film transistors  

Science Conference Proceedings (OSTI)

Hydrogenated microcrystalline silicon ({mu}c-Si:H) is a promising candidate for thin-film transistors (TFTs) in large-area electronics due to high electron and hole charge carrier mobilities. We report on ambipolar TFTs based on {mu}c-Si:H prepared by plasma-enhanced chemical vapor deposition at temperatures compatible with flexible substrates. Electrons and holes are directly injected into the {mu}c-Si:H channel via chromium drain and source contacts. The TFTs exhibit electron and hole charge carrier mobilities of 30-50 cm{sup 2}/V s and 10-15 cm{sup 2}/V s, respectively. In this work, the electrical characteristics of the ambipolar {mu}c-Si:H TFTs are described by a simple analytical model that takes the ambipolar charge transport into account. The analytical expressions are used to model the transfer curves, the potential and the net surface charge along the channel of the TFTs. The electrical model provides insights into the electronic transport of ambipolar {mu}c-Si:H TFTs.

Knipp, Dietmar; Marinkovic, M. [Electronic Devices and Nanophotonics Laboratory, Jacobs University Bremen, 28759 Bremen (Germany); Chan, Kah-Yoong [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); Faculty of Engineering, Multimedia University, Cyberjaya, 63100 Selangor (Malaysia); Gordijn, Aad [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); Stiebig, Helmut [IEF5-Photovoltaics, Research Center Juelich, 52425 Juelich (Germany); Malibu Solar GmbH and Co. KG, 33609 Bielefeld (Germany)

2011-01-15T23:59:59.000Z

8

Status of Amorphous and Crystalline Thin Film Silicon Solar Cell Activities  

DOE Green Energy (OSTI)

This paper reviews the recent activities and accomplishments of the national Amorphous Silicon Team and a (crystalline) thin-film-Si subteam that was implemented in 2002 to research solar cell devices based on thin crystalline Si based layers. This paper reports the evolution of team organization, the technical highlights from the recent team meetings, and an outlook on commercialization potential.

von Roedern, B.

2003-05-01T23:59:59.000Z

9

Selective Formation of Size-Controlled Silicon Nanocrystals by Photosynthesis in SiO Nanoparticle Thin Film  

Science Conference Proceedings (OSTI)

The SiOx thin film with a thickness of about 1 mum was formed on a GaAs substrate by bar-coating with the organic solution of the SiOx nanoparticles (~40 nm). The as-formed SiOx thin film consists of the SiOx ... Keywords: ${hbox{SiO}}_{x}$ , Nanocrystal, Raman, photosynthesis, self- limiting, silicon

Changyong Chen; S. Kimura; S. Nozaki; H. Ono; K. Uchida

2006-11-01T23:59:59.000Z

10

Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells  

E-Print Network (OSTI)

Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells. de Bariloche, Argentina 3 ECN Solar Energy, High Tech Campus, Building 5, 5656 AE Eindhoven energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar

Dunin-Borkowski, Rafal E.

11

In situ measurements of stress evolution in silicon thin films during  

NLE Websites -- All DOE Office Websites (Extended Search)

In situ measurements of stress evolution in silicon thin films during In situ measurements of stress evolution in silicon thin films during electrochemical lithiation and delithiation Title In situ measurements of stress evolution in silicon thin films during electrochemical lithiation and delithiation Publication Type Journal Article Year of Publication 2010 Authors Sethuraman, Vijay A., Michael J. Chon, Maxwell Shimshak, Venkat Srinivasan, and Pradeep R. Guduru Journal Journal of Power Sources Volume 195 Start Page 5062 Issue 15 Pagination 5062-5066 Date Published 08/2010 Keywords In situ stress measurement, Lithium-ion battery, Mechanical dissipation, Multi-beam optical sensor (MOS), Open-circuit relaxation, Silicon anode Abstract We report in situ measurements of stress evolution in a silicon thin-film electrode during electrochemical lithiation and delithiation by using the multi-beam optical sensor (MOS) technique. Upon lithiation, due to substrate constraint, the silicon electrode initially undergoes elastic deformation, resulting in rapid rise of compressive stress. The electrode begins to deform plastically at a compressive stress of ca. -1.75 GPa; subsequent lithiation results in continued plastic strain, dissipating mechanical energy. Upon delithiation, the electrode first undergoes elastic straining in the opposite direction, leading to a tensile stress of ca. 1 GPa; subsequently, it deforms plastically during the rest of delithiation. The plastic flow stress evolves continuously with lithium concentration. Thus, mechanical energy is dissipated in plastic deformation during both lithiation and delithiation, and it can be calculated from the stress measurements; we show that it is comparable to the polarization loss. Upon current interruption, both the film stress and the electrode potential relax with similar time constants, suggesting that stress contributes significantly to the chemical potential of lithiated silicon.

12

Low-cost, deterministic quasi-periodic photonic structures for light trapping in thin film silicon solar cells  

E-Print Network (OSTI)

Light trapping has been an important issue for thin film silicon solar cells because of the low absorption coefficient in the near infrared range. In this paper, we present a photonic structure which combines anodic aluminum ...

Sheng, Xing

13

Amorphous silicon/polycrystalline thin film solar cells  

DOE Patents (OSTI)

An improved photovoltaic solar cell is described including a p-type amorphous silicon layer, intrinsic amorphous silicon, and an n-type polycrystalline semiconductor such as cadmium sulfide, cadmium zinc sulfide, zinc selenide, gallium phosphide, and gallium nitride. The polycrystalline semiconductor has an energy bandgap greater than that of the amorphous silicon. The solar cell can be provided as a single-junction device or a multijunction device.

Ullal, H.S.

1991-03-13T23:59:59.000Z

14

Method of fabrication of display pixels driven by silicon thin film transistors  

DOE Patents (OSTI)

Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200.degree. C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA)

1999-01-01T23:59:59.000Z

15

Amorphous-silicon thin-film heterojunction solar cells  

DOE Green Energy (OSTI)

The investigation of amorphous silicon materials at MTSEC has had two major thrusts: (1) to improve the amorphous material, i.e., obtain a low state density in the gap, improve the carrier collection depth and diminish non-radiative recombinations; and (2) to attempt to understand and improve on the limitations of the junction devices while evaluating the amorphous silicon materials. In the first of these efforts, the investigation has continued to examine the modifications to the a-Si(H) network by alloying silicon with other group IVA elements, either in binary or ternary compositions, and/or by replacing the hydrogenation for defect compensation with a combination of hydrogenation and alkylation or hydrogenation and halogenation. The doped junction layers are being examined in an attempt to determine the limiting characteristics of the junctions in solar cell devices of these amorphous materials. Amorphous alloys of Si-Ge, Si-C, Si-Sn were prepared as well as ternary compositions of Si-Ge-C and Si-Sn-C. In addition, Na vapor was added to the gas feed to deposit a-Si(Na, H) films, and to prepare Si-Sn, fluoride was added along with the tin by vapor additions of SnF/sub 4/ to the gas feed. The optical properties of these materials were measured, and structural and compositional information was obtained from the IR vibrational spectra using the scanning electron microscope and from analyses using scanning Auger microscopy. Electrical measurements have included the dark conductivity and the photo conductivity under room fluorescent light and at AM1 conditions. With alloys that displayed promising photoconductive properties n-i-p devices were prepared to assess the solar cell properties. Details are presented. (WHK)

Cretella, M. C.; Gregory, J. A.; Sandstrom, D. B.; Paul, W.

1981-01-01T23:59:59.000Z

16

Physical Properties of HWCVD Microcrystalline Silicon Thin Films: Preprint  

DOE Green Energy (OSTI)

This conference paper describes Microcrystalline silicon films were grown with different thicknesses and different hydrogen dilution ratios on glass and Si substrates. Some films were deposited with a seed layer, whereas others were deposited directly on the substrate. We used atomic force microscopy, scanning electron microscopy, and X-ray diffraction to study the morphology and crystalline structure of the samples. We did not find a significant influence of the different substrates on the morphology or crystalline structure. The presence of the seed layer enhanced the crystallization process, decreasing the amount of amorphous layer present in the films. The microstructure of most films was formed by grains, with a subgrain structure. Films grown with low values of dilution ratio had (220) texture and elongated grains, whereas films deposited with high values of dilution ratio were randomly oriented and had an irregular shape.

Moutinho, H. R.; Romero, M. J.; Jiang, C. S.; Xu, Y.; Nelson, B. P.; Jones, K. M.; Mahan, A. H.; Al-Jassim, M. M.

2002-05-01T23:59:59.000Z

17

Thin film polycrystalline silicon solar cells. Second technical progress report, July 16, 1980-October 15, 1980  

DOE Green Energy (OSTI)

The objectives of this contract are to fabricate large area thin film silicon solar cells with AM1 efficiency of 10% or greater with good reproducibility and good yield and to assess the feasibility of implementing this process for manufacturing solar cells at a cost of $300/kWe. Efforts have been directed to the purification of metallurgical silicon, the preparation and characterization of substrates and epitaxial silicon layers, and the fabrication and characterization of solar cells. The partial purification of metallurgical silicon by extraction with aqua regia has been further investigated in detail, and the resulting silicon was analyzed by the atomic absorption technique. The unidirectional solidification of aqua regia-extracted metallurgical silicon on graphite was used for the preparation of substrates, and the impurity distribution in the substrate was determined and compared with the impurity content in metallurgical silicon. The effects of heat treatment on the impurity distribution in the substrate and in the epitaxial layer have also been investigated. Large area (30 to 60 cm/sup 2/) solar cells have been prepared from aqua regia-extracted metallurgical silicon substrates by depositing a p-n junction structure using the thermal reduction of trichlorosilane containing appropriate dopants. The AM1 efficiencies are about 9% for cells of 30 to 35 cm/sup 2/ area. Larger area, 60 cm/sup 2/, thin film solar cells have been fabricated for the first time, and their AM1 efficiencies are slightly higher than 8%. The spectral response, minority carrier diffusion length, and I/sub sc/-V/sub oc/ relation in a number of solr cells have been measured.

None

1980-10-01T23:59:59.000Z

18

High-Cycle Fatigue of Single-Crystal Silicon Thin Films  

E-Print Network (OSTI)

When subjected to alternating stresses, most materials degrade, e.g., suffer premature failure, due to a phenomenon known as fatigue. It is generally accepted that in brittle materials, such as ceramics, fatigue can only take place in toughened solids, i.e., premature fatigue failure would not be expected in materials such as single crystal silicon. The results of this study, however, appear to be at odds with the current understanding of brittle material fatigue. Twelve thin-film ( 20 m thick) single crystal silicon specimens were tested to failure in a controlled air environment (30 0.1 C, 50 2% relative humidity). Damage accumulation and failure of the notched cantilever beams were monitored electrically during the "fatigue life" test. Specimen lives ranged from about 10 s to 48 days, or 1 10 6 to 1 10 11 cycles before failure over stress amplitudes ranging from approximately 4 to 10 GPa. A variety of mechanisms are discussed in light of the fatigue life data and fracture surface evaluation. [642] Index Terms---Fatigue failure, MEMS devices, single-crystal silicon, thin films.

Christopher L. Muhlstein; Stuart B. Brown; Robert O. Ritchie

2001-01-01T23:59:59.000Z

19

High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing  

E-Print Network (OSTI)

One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

20

Interactions between radical growth precursors on plasma-deposited silicon thin-film surfaces  

SciTech Connect

We present a detailed analysis of the interactions between growth precursors, SiH{sub 3} radicals, on surfaces of silicon thin films. The analysis is based on a synergistic combination of density functional theory calculations on the hydrogen-terminated Si(001)-(2x1) surface and molecular-dynamics (MD) simulations of film growth on surfaces of MD-generated hydrogenated amorphous silicon (a-Si:H) thin films. In particular, the authors find that two interacting growth precursors may either form disilane (Si{sub 2}H{sub 6}) and desorb from the surface, or disproportionate, resulting in the formation of a surface dihydride (adsorbed SiH{sub 2} species) and gas-phase silane (SiH{sub 4}). The reaction barrier for disilane formation is found to be strongly dependent on the local chemical environment on the silicon surface and reduces (or vanishes) if one/both of the interacting precursors is/are in a ''fast diffusing state,'' i.e., attached to fivefold coordinated surface Si atoms. Finally, activation energy barriers in excess of 1 eV are obtained for two chemisorbed (i.e., bonded to a fourfold coordinated surface Si atom) SiH{sub 3} radicals. Activation energy barriers for disproportionation follow the same tendency, though, in most cases, higher barriers are obtained compared to disilane formation reactions starting from the same initial configuration. MD simulations confirm that disilane formation and disproportionation reactions also occur on a-Si:H growth surfaces, preferentially in configurations where at least one of the SiH{sub 3} radicals is in a ''diffusive state.'' Our results are in agreement with experimental observations and results of plasma process simulators showing that the primary source for disilane in low-power plasmas may be the substrate surface.

Bakos, Tamas; Valipa, Mayur S.; Maroudas, Dimitrios [Department of Chemical Engineering, University of Massachusetts, Amherst, Massachusetts 01003-3110 (United States)

2007-03-21T23:59:59.000Z

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Silicon ribbon growth by a capillary action shaping technique. Quarterly progress report No. 3, March 15, 1976  

DOE Green Energy (OSTI)

Objectives of the program are the technological assessment of ribbon growth of silicon by a capillary action shaping technique and economic evaluation of ribbon silicon grown by a capillary action shaping technique as low-cost silicon. The program of study included crystal growth of silicon ribbons, characterization of silicon ribbons, and economic evaluations and computer-aided simulation of ribbon growth. (WDM)

Schwuttke, G.H.; Ciszek, T.F.; Kran, A.

1976-01-01T23:59:59.000Z

22

Defect structure of web silicon ribbon  

DOE Green Energy (OSTI)

Web silicon ribbon has recently emerged as a material for the production of high efficiency solar cells. Since defects introduced during growth may influence locally minority carrier recombination rates, there is now a need to examine the defect structure in detail and to correlate it with electrical activity. This work describes initial observations made on web material by EBIC and HVEM. Although EBIC investigations have shown that dislocations emerging at the web surface enhance minority carrier recombination rates, their density is low enough (typically 10/sup 5/cm/sup -2/) to have only a small effect on the efficiency of the material as a solar cell. Since a condition for dendritic web growth is that the dendrites contain at least two twin boundaries it is usual to find that some of these boundaries extend into the web. These boundaries are formed parallel to the (111) growth surface and are found to be sites of strong electrical activity. HVEM has been used to study the defect structure at the twin boundary. Two types of dislocation networks lying on different (111) planes have been observed, presumably corresponding to two adjacent twin boundaries.

Cunningham, B.; Strunk, H.; Ast, D.

1980-10-01T23:59:59.000Z

23

High cycle fatigue of polycrystalline silicon thin films in laboratory air  

E-Print Network (OSTI)

When subjected to alternating stresses, most materials degrade, e.g., suffer premature failure, due to a phenomenon known as fatigue. It is generally accepted that in brittle materials, such as ceramics, cyclic fatigue can only take place where there is some degree of toughening, implying that premature fatigue failure would not be expected in polycrystalline silicon where such toughening is absent. However, the fatigue failure of polysilicon is reported in the present work, based on tests on thirteen thin-film (2 ”m thick) specimens cycled to failure in laboratory air (~25șC, 30-50 % relative humidity), where damage accumulation and failure of the notched cantilever beams were monitored electrically during the test. Specimen lives ranged from about 10 seconds to 34 days (5 x 10 5 to 1 x 10 11 cycles) with the stress amplitude at failure being reduced to ~50 % of the low-cycle strength for lives in excess of 10 9 cycles.

C. L. Muhlstein; S. B. Brown; R. O. Ritchie

2000-01-01T23:59:59.000Z

24

Analysis of defects at the interface between high-k thin films and (100) silicon  

Science Conference Proceedings (OSTI)

Paramagnetic defects in atomic layer deposition grown aluminium oxide thin films have been studied using electron paramagnetic resonance. Initial spectra indicate the presence of Si-db, P"b"0 and P"b"1 defects, previously observed in Si/SiO"2 structures. ... Keywords: Aluminium oxide, Defects, EPR, High-k, Interfaces, Thin films

B. J. Jones; R. C. Barklie

2005-06-01T23:59:59.000Z

25

Amorphous Silicon(a-Si: H) Thin Film Based Omnidirectional Control Solar Powered Vehicle  

Science Conference Proceedings (OSTI)

Through the paper, our goal is to drive a car with the help of thin film based solar cell. Mechanical and Electrical parts are assembled thereby. The main objective of this project is to collect maximum solar energy from the solar spectrum and use that ... Keywords: Thin film Photovoltaic, Single p-i-n Junction, Steering Mechanism, H-Bridge, Gear motor

Abdullah Moinuddin; Md. Jahidul Hoque; Jony C. Sarker; Akhter Zia

2012-03-01T23:59:59.000Z

26

Combinatorial Approach to Thin-Film Silicon Materials and Devices: Preprint  

DOE Green Energy (OSTI)

We apply combinatorial approaches to thin-film Si materials and device research. Our hot-wire chemical vapor deposition chamber is fitted with substrate xyz translation, a motorized shutter, and interchangable shadow masks to implement various combinatorial methods. For example, we have explored, in detail, the transition region through which thin Si changes from amorphous to microcrystalline silicon. This transition is very sensitive to deposition parameters such as hydrogen-to-silane dilution of the source gas, chamber pressure, and substrate temperature. A material library, on just a few substrates, led to a three-dimensional map of the transition as it occurs in our deposition system. This map guides our scientific studies and enables us to use several distinct transition materials in our solar-cell optimization research. We also grew thickness-graded wedge samples spanning the amorphous-to-microcrystalline Si transition. These single stripes map the temporal change of the thin silicon phase onto a single spatial dimension. Therefore, the structural, optical, and electrical properties can easily be studied through the phase transition. We have examined the nature of the phase change on the wedges with Raman spectroscopy, atomic force microscopy, extended x-ray absorption fine structure (EXAFS), x-ray absorption near-edge spectroscopy (XANES), ultraviolet reflectivity, and other techniques. Combinatorial techniques also accelerate our device research. In solar cells, for example, the combinatorial approach has significantly accelerated the optimization process of p-, i-, n-, and buffer layers through wide exploration of the complex space of growth parameters and layer thicknesses. Again, only a few deposition runs are needed. It has also been useful to correlate the materials properties of single layers in a device to their performance in the device. We achieve this by depositing layers that extend beyond the device dimensions to permit independent characterization of the layers. Not only has the combinatorial approach greatly increased the rate of materials and device experimentation in our laboratory, it has also been a powerful tool leading to a better understanding of structure-property relationships in thin film Si.

Wang, Q.; Moutinho, H.; To, B.; Perkins, J.; Ginley, D.; Branz, H. M.; Tessler, L. R.; Han, D.

2003-04-01T23:59:59.000Z

27

NREL: Photovoltaics Research - Polycrystalline Thin-Film Materials...  

NLE Websites -- All DOE Office Websites (Extended Search)

in the area of polycrystalline thin-film materials and devices. Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

28

Thin-film polycrystalline silicon solar cells. Quarterly report no. 3, October 16, 1980-January 15, 1981  

DOE Green Energy (OSTI)

The objectives of the project are: 1) to develop cell fabrication procedures to further define the maximum capabilities of the conducting oxide/silicon heterojunction solar cells; 2) to optimize the spray fabrication technique for making reproducible high efficiency cells; 3) to assess the stability and the projected lifetime of the cell structure; 4) to identify through appropriate measurements the effects of grain boundaries and intragrain defects on the electronic transport mechanisms in thin-film polycrystalline silicon; and 5) to determine the feasibility of a large-scale fabrication process. Progress is reported.

Ghosh, A. K.; Feng, T.; Eustace, D. J.; Maruska, H. P.

1981-01-01T23:59:59.000Z

29

Structural Properties Studies of Zinc Oxide Thin Film Grown on Silicon Carbide by Means of X-ray Diffraction Technique  

Science Conference Proceedings (OSTI)

In this work, the structural properties of the zinc oxide (ZnO) thin film on silicon carbide (6H-SiC) grown by radio frequency sputtering technique are investigated thoroughly by means of X-ray diffraction (XRD) technique. Both conventional XRD phase analysis and rocking curve measurements are carried out in order to determine the crystalline structure and the crystalline quality of the ZnO sample. From the phase analysis, intense peaks correspond to ZnO(002), iC(006) and their multiple reflections, i.e. ZnO(004) and SiC(0012) are observed. This result suggests that the ZnO thin film is in wurzite structure. Through the simulation of XRD rocking curve of the ZnO(002) peak, the lattice mismatch of 5.49% is obtained.

Ching, C. G.; Ng, S. S.; Hassan, Z.; Hassan, H. Abu; Al-Hardan, N. H.; Abdullah, M. J. [Nano-optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800, Penang (Malaysia)

2011-03-30T23:59:59.000Z

30

Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor  

E-Print Network (OSTI)

The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films deposited at low substrate temperature for devices such as thin film transistors (TFTs). The effect of the deposition parameters such as doping gas concentration, substrate temperature, hydrogen dilution, helium dilution, power density, and pressure at 50 kHz rf frequency on the films' characteristics were analyzed. The films' electrical property was characterized by its dark resistivity. The chemical composition and bonding characteristics were discussed. p-channel TFTs were fabricated with these optimized films. Three different levels of dopant concentrations in the channel were used to detect the dopant effect on the TFT properties. Doping resulted in the increase of film deposition rate. The low film deposition rate at the high temperature deposition corresponds to a dense structured film. The increase of gas phase H? concentration could increase H? etching of the weak bonds in the film, which is consistent with the decrease of the deposition rate. Film's dark conductivity is determined by the atomic B concentration in the film, the substrate temperature, the ion bombardment effect, the surface morphology, and the gas phase and film hydrogen concentration. At high power density and high pressure plasma condition, film with a high deposition rate shows a high conductivity. However, excessive ion bombardment effect, e.g. in powdery plasma region, limits the further increase of the conductivity. Film deposited with He dilution demonstrates a higher conductivity compared to the H? dilution counterpart. This might be attributed to a more effective ion bombardment effect of the former. Powder generation in the plasma significantly affects the conductivity of He diluted film compared to the H? diluted ones, which might be due to the less H? etching effect at the He dilution deposition. The output and transfer characteristics show the normal p-channel TFTs behavior. TFT characteristics, such as mobility, threshold voltage, and on-off current ratio were affected by the doping gas concentration in the channel layer and the deposition process.

Nominanda, Helinda

2004-01-01T23:59:59.000Z

31

Development of Commercial Technology for Thin Film Silicon Solar Cells on Glass: Cooperative Research and Development Final Report, CRADA Number CRD-07-209  

DOE Green Energy (OSTI)

NREL has conducted basic research relating to high efficiency, low cost, thin film silicon solar cell design and the method of making solar cells. Two patents have been issued to NREL in the above field. In addition, specific process and metrology tools have been developed by NREL. Applied Optical Sciences Corp. (AOS) has expertise in the manufacture of solar cells and has developed its own unique concentrator technology. AOS wants to complement its solar cell expertise and its concentrator technology by manufacturing flat panel thin film silicon solar cell panels. AOS wants to take NREL's research to the next level, using it to develop commercially viable flat pane, thin film silicon solar cell panels. Such a development in equipment, process, and metrology will likely produce the lowest cost solar cell technology for both commercial and residential use. NREL's fundamental research capability and AOS's technology and industrial background are complementary to achieve this product development.

Sopori, B.

2013-03-01T23:59:59.000Z

32

Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction  

DOE Patents (OSTI)

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Toet, Daniel (Mountain View, CA); Sigmon, Thomas W. (Albuquerque, NM)

2005-08-23T23:59:59.000Z

33

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction  

DOE Patents (OSTI)

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Toet, Daniel (Mountain View, CA); Sigmon, Thomas W. (Albuquerque, NM)

2003-01-01T23:59:59.000Z

34

The Effects of Damage on Hydrogen-Implant-Induced Thin-Film Separation from Bulk Silicon Carbide  

DOE Green Energy (OSTI)

Exfoliation of Sic by hydrogen implantation and subsequent annealing forms the basis for a thin-film separation process which, when combined with hydrophilic wafer bonding, can be exploited to produce silicon-carbide-on-insulator, SiCOI. Sic thin films produced by this process exhibit unacceptably high resistivity because defects generated by the implant neutralize electrical carriers. Separation occurs because of chemical interaction of hydrogen with dangling bonds within microvoids created by the implant, and physical stresses due to gas-pressure effects during post-implant anneal. Experimental results show that exfoliation of Sic is dependent upon the concentration of implanted hydrogen, but the damage generated by the implant approaches a point when exfoliation is, in fact, retarded. This is attributed to excessive damage at the projected range of the implant which inhibits physical processes of implant-induced cleaving. Damage is controlled independently of hydrogen dosage by elevating the temperature of the SiC during implant in order to promote dynamic annealing. The resulting decrease in damage is thought to promote growth of micro-cracks which form a continuous cleave. Channeled H{sup +} implantation enhances the cleaving process while simultaneously minimizing residual damage within the separated film. It is shown that high-temperature irradiation and channeling each reduces the hydrogen fluence required to affect separation of a thin film and results in a lower concentration of defects. This increases the potential for producing SiC01 which is sufficiently free of defects and, thus, more easily electrically activated.

Gregory, R.B.; Holland, O.W.; Thomas, D.K.; Wetteroth, T.A.; Wilson, S.R.

1999-04-05T23:59:59.000Z

35

Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films  

Science Conference Proceedings (OSTI)

In micro-/nanomachined devices and systems, aluminum nitride (AlN) thin films are widely used due to their piezoelectric properties. This work evaluates the potential of modifying the interface between the AlN thin film and the silicon (Si) wafer serving as bottom electrode for optimized crystallographic orientation and, hence, improved electrical and piezoelectric properties. The films were analyzed using temperature-dependant leakage current measurements, transmission electron microscopy, and x-ray diffraction. By preconditioning of the Si substrate surface applying sputter etching prior to film deposition, leakage current levels are substantially decreased and an increased (002) orientation of the AlN grains is observed.

Schneider, M.; Bittner, A.; Patocka, F.; Schmid, U. [Department for Microsystems Technology, Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse 7, A-1040 Vienna (Austria); Stoeger-Pollach, M. [University Service Center for Transmission Electron Microscopy (USTEM), Vienna University of Technology, Wiedner Hauptstrasse 8-10/052, 1040 Vienna (Austria); Halwax, E. [Institute of Chemical Technologies and Analytics, Vienna University of Technology, Getreidemarkt 9, A-1060 Vienna (Austria)

2012-11-26T23:59:59.000Z

36

Producer-Focused Life Cycle Assessment of Thin-Film Silicon Photovoltaic Systems  

E-Print Network (OSTI)

microcrystalline- silicon photovoltaic cell, B) range ofpayback of roof mounted photovoltaic cells. Boustead, I. andmicrocrystalline-silicon photovoltaic cell, B) range of

Zhang, Teresa Weirui

2011-01-01T23:59:59.000Z

37

SunShot Initiative: Thin Film Photovoltaics Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Film Photovoltaics Research Thin Film Photovoltaics Research to someone by E-mail Share SunShot Initiative: Thin Film Photovoltaics Research on Facebook Tweet about SunShot Initiative: Thin Film Photovoltaics Research on Twitter Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Google Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Delicious Rank SunShot Initiative: Thin Film Photovoltaics Research on Digg Find More places to share SunShot Initiative: Thin Film Photovoltaics Research on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Thin Film Photovoltaics Research The U.S. Department of Energy (DOE) supports research and development of

38

Experimental Investigation of Size Effects on the Thermal Conductivity of Silicon-Germanium Alloy Thin Films  

E-Print Network (OSTI)

We experimentally investigate the role of size effects and boundary scattering on the thermal conductivity of silicon-germanium alloys. The thermal conductivities of a series of epitaxially grown Si[subscript 1-x] Ge[subscript ...

Cheaito, Ramez

39

Low emissivity high-temperature tantalum thin film coatings for silicon devices  

E-Print Network (OSTI)

The authors study the use of thin ( ? 230?nm) tantalum (Ta) layers on silicon (Si) as a low emissivity (high reflectivity) coating for high-temperature Si devices. Such coatings are critical to reduce parasitic radiation ...

Rinnerbauer, Veronika

40

Thin film polycrystalline silicon solar cells. Quarterly report No. 1, October 1-December 31, 1979  

DOE Green Energy (OSTI)

The MoSi/sub 2/ separation layer growth rate has been studied as a function of time and temperature. The presence of small amounts of O/sub 2/ in the silicon deposition ambient were found to inhibit the growth rate of the MoSi/sub 2/ layer and also to affect the reliability of shear separation. Void formation in silicon at the Si-MoSi/sub 2/ interface, due predominantly to diffusion of silicon through the MoSi/sub 2/ layer was observed. This is believed to be responsible for shear separation occurring in the silicon film. Gas chromatograhic procedures were developed for characterizing the silicon deposition process. Coherent twin bundles in the grain-enhanced silicon films were not found to adversely influence solar cell efficiency. Several 1 cm x 2 cm solar cells were fabricated. Performance characteristics of these cells are discussed; the best device had a conversion efficiency of 10.7% (under simulated AM1 illumination) with V/sub OC/ = 0.545 V, J/sub SC/ = 28.65 mA/cm/sup 2/ and FF = 68.3%.

Sarma, K.R.; Rice, M.J.; Legge, R.

1979-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Exploring the parameter space of disc shaped silver nanoparticles for thin film silicon photovoltaics  

E-Print Network (OSTI)

We numerically simulate, using finite-difference time-domain, the optical properties of silver nano discs deposited on the front surface of silicon solar cells. We explore the effect of each of the parameters of such a system, in order to draw some general design rules for the subsequent fabrication of such structures.

Figeys, Bruno

2011-01-01T23:59:59.000Z

42

Development of Thin Film Silicon Solar Cell Using Inkjet Printed Silicon and Other Inkjet Processes: Cooperative Research and Development Final Report, CRADA Number CRD-07-260  

Science Conference Proceedings (OSTI)

The cost of silicon photovoltaics (Si-PV) can be greatly lowered by developing thin-film crystalline Si solar cells on glass or an equally lower cost substrate. Typically, Si film is deposited by thermal evaporation, plasma enhanced chemical vapor deposition, and sputtering. NREL and Silexos have worked under a CRADA to develop technology to make very low cost solar cells using liquid organic precursors. Typically, cyclopentasilane (CPS) is deposited on a glass substrate and then converted into an a-Si film by UV polymerization followed by low-temperature optical process that crystallizes the amorphous layer. This technique promises to be a very low cost approach for making a Si film.

Sopori, B.

2012-04-01T23:59:59.000Z

43

Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout  

SciTech Connect

We describe the characteristics of thin (1 {mu}m) and thick (> 30 {mu}m) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-ray, {gamma} rays and thermal neutrons. For x-ray, {gamma} ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For thermal neutron detection we use thin (2{approximately}5 {mu}m) gadolinium converters on 30 {mu}m thick a-Si:H diodes. For direct detection of minimum ionizing particles and others with high resistance to radiation damage, we use the thick p-i-n diode arrays. Diode and amorphous silicon readouts as well as polysilicon pixel amplifiers are described.

Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Wildermuth, D. (Lawrence Berkeley Lab., CA (United States)); Goodman, C. (Air Techniques Corp., Hicksville, New York (United States)); Fujieda, I. (NEC Corp., Tokyo (Japan))

1992-07-01T23:59:59.000Z

44

Thin, High Lifetime Silicon Wafers with No Sawing; Re-crystallization in a Thin Film Capsule  

SciTech Connect

The project fits within the area of renewable energy called photovoltaics (PV), or the generation of electricity directly from sunlight using semiconductor devices. PV has the greatest potential of any renewable energy technology. The vast majority of photovoltaic modules are made on crystalline silicon wafers and these wafers accounts for the largest fraction of the cost of a photovoltaic module. Thus, a method of making high quality, low cost wafers would be extremely beneficial to the PV industry The industry standard technology creates wafers by casting an ingot and then sawing wafers from the ingot. Sawing rendered half of the highly refined silicon feedstock as un-reclaimable dust. Being a brittle material, the sawing is actually a type of grinding operation which is costly both in terms of capital equipment and in terms of consumables costs. The consumables costs associated with the wire sawing technology are particularly burdensome and include the cost of the wire itself (continuously fed, one time use), the abrasive particles, and, waste disposal. The goal of this project was to make wafers directly from molten silicon with no sawing required. The fundamental concept was to create a very low cost (but low quality) wafer of the desired shape and size and then to improve the quality of the wafer by a specialized thermal treatment (called re-crystallization). Others have attempted to create silicon sheet by recrystallization with varying degrees of success. Key among the difficulties encountered by others were: a) difficulty in maintaining the physical shape of the sheet during the recrystallization process and b) difficulty in maintaining the cleanliness of the sheet during recrystallization. Our method solved both of these challenges by encapsulating the preform wafer in a protective capsule prior to recrystallization (see below). The recrystallization method developed in this work was extremely effective at maintaining the shape and the cleanliness of the wafer. In addition, it was found to be suitable for growing very large crystals. The equipment used was simple and inexpensive to operate. Reasonable solar cells were fabricated on re-crystallized material.

Emanuel Sachs Tonio Buonassisi

2013-01-16T23:59:59.000Z

45

Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing  

SciTech Connect

We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 {mu}m, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

Machida, Emi [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192 (Japan); Research Fellowships of the Japan Society for the Promotion of Science, Japan Society for the Promotion of Science, 1-8 Chiyoda, Tokyo 102-8472 (Japan); Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192 (Japan); Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332-0012 (Japan); Ikenoue, Hiroshi [Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka 819-0395 (Japan)

2012-12-17T23:59:59.000Z

46

Characterization of Amorphous Silicon Thin Films and PV Devices: Final Technical Report, January 1998 - October 2001  

DOE Green Energy (OSTI)

This report describes the most significant results of the three phases: (1) development of a second harmonic detection technique for electron spin resonance (ESR) and optically excited ESR (LESR) in a-Si:H and related alloys, (2) discovery of universal kinetics for the decay of optically excited electrons and holes in a-Si:H and related alloys at low temperatures, (3) first detection of optically excited band-tail electrons and holes in hydrogenated amorphous germanium (a-Ge:H), (4) first ESR study of the kinetics for the production of silicon dangling bonds in a-Si:H at low temperatures, and (5) determination from 1H NMR that there exists an order of magnitude more molecular hydrogen (H2) in a-Si:H than previously measured.

Taylor, P. C.

2002-03-01T23:59:59.000Z

47

Solar Control Thin Films Laboratory  

NLE Websites -- All DOE Office Websites (Extended Search)

Sputtering equipment Solar Control Thin Films Laboratory The Solar Control Thin Films lab develops novel thin film coatings, deposition technologies, and device systems for...

48

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Annual subcontract report, May 1985 - Jul 1986  

DOE Green Energy (OSTI)

A study was undertaken of the optoelectronic properties of amorphous silicon-hydrogen thin films deposited from disilane at high deposition rates. The information derived from this study was used to fabricate amorphous silicon solar cells with efficiencies exceeding 7%. The intrinsic layer of these solar cells was deposited at 15 angstroms/second. Material properties investigated included dark conductivity, photoconductivity, minority carrier diffusion length, and density of states. The solar cells properties characterized were absolute quantum yield and simulated global AM 1.5 efficiencies. Investigations were undertaken utilizing optical and infrared spectroscopy to optimize the microstructures of the intrinsic amorphous silicon. That work was sponsored by the New York State Energy Research and Development Authority. The information was used to optimize the intrinsic layer of amorphous silicon solar cells, resulting in AM 1.5 efficiencies exceeding 7%.

Wiesmann, H.; Dolan, J.; Fricano, G.; Danginis, V.

1987-02-01T23:59:59.000Z

49

Silicon ribbon growth by a capillary action shaping technique. Quarterly technical progress report No. 2  

DOE Green Energy (OSTI)

Progress during the second quarter of the contractual effort is described. The work performed related mainly to ribbon growth by a capillary action shaping technique and to ribbon characterization. Actual progress in the crystal growth area includes the evaluation of 10 potential die materials other than carbon and the process development for 25-mm-wide ribon. From the die study it is concluded that boron carbide, silicon carbide, and silicon nitride may warrant further investigation as die materials. Process development for 25-mm ribbon growth resulted in ribbons of superior surface quality. Potential ribbongrowth problems encountered and discussed include a boron doping anomaly and frozen-in stresses in ribbons. The characterization effort concentrated on the development of a solar-cell process to be used for ribbon characterization. Material requirements and detailed process procedures are given. Solar cells fabricated by this process are compared with commercially available solar cells and compare favorably. A transmission electron microscopy study of planar boundaries frequently observed in ribbon crystals is reported. (auth)

Schwuttke, G.H.; Ciszek, T.F.; Kran, A.

1975-01-01T23:59:59.000Z

50

Polycrystalline Thin Film Used in Photovoltaics  

Energy.gov (U.S. Department of Energy (DOE))

Polycrystalline thin-film cells are made of many tiny crystalline grains of semiconductor materials. The materials used in these cells have properties that are different from those of silicon.

51

Thin film polycrystalline silicon solar cells. Quarterly report No. 1, January 1, 1979-March 31, 1979  

DOE Green Energy (OSTI)

A theory capable of predicting the performance of polycrystalline silicon solar cells is formulated. It relates grain size to mobility, lifetime, diffusion length, reverse saturation current, open circuit photovoltage and fill factor. Only the diffusion lengths measured by the surface photovoltage technique for grains less than or equal to 5 ..mu..m do not agree with our theory. The reason for this discrepancy is presently being investigated. We conclude that grains greater than or equal to 100 ..mu..m are necessary to achieve efficiencies greater than or equal to 10 percent at AM1 irradiance. The calculations were performed for the case of no grain boundary passivation. At present we are investigating the improvements to be expected from grain boundary passivation. We have determined that the parameters that best fit the available data are as follows: (1) Number of surface states at grain boundaries acting as recombination centers - 1.6 x 10/sup 13//cm/sup 2/. (2) Capture cross section - 2 x 10/sup -16/ cm/sup 2/. (3) Surface recombination velocity at grain boundary - 3.2 x 10/sup 4/ cm/sec. The following types of solar cells are considered in the model: SnO/sub 2//Si Heterostructure, MIS, and p/n junction. In all types of solar cells considered, grain boundary recombination plays a dominant role, especially for small grains. Though the calculations were originally expected to yield only order of magnitude results, they have proven to be accurate for most parameters within 10 percent.

Ghosh, A.K.; Feng, T.; Maruska, H.P.; Fishman, C.

1979-01-01T23:59:59.000Z

52

The deposition of nanocrystalline TiO2 thin film on silicon using Sol-Gel technique and its characterization  

Science Conference Proceedings (OSTI)

TiO"2 thin films were deposited using Sol-Gel spin coating technique using titanium isoperoxide as the Titania precursor. The films were characterized using X-ray diffraction, capacitance voltage measurement and Raman characterization technique. The ... Keywords: Sol-Gel, Spin coating, Titanium dioxide, X-ray diffraction

Mukesh Kumar; Mukesh Kumar; Dinesh Kumar

2010-03-01T23:59:59.000Z

53

Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface  

DOE Green Energy (OSTI)

The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5+2)nm after SPC could be estimated.

Bar, M.; Wimmer, M.; Wilks, R. G.; Roczen, M.; Gerlach, D.; Ruske, F.; Lips, K.; Rech, B.; Weinhardt, L.; Blum, M.; Pookpanratana, S.; Krause, S.; Zhang, Y.; Heske, C.; Yang, W.; Denlinger, J. D.

2010-04-30T23:59:59.000Z

54

Young's modulus, Poisson's ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon  

E-Print Network (OSTI)

cyclotron resonance MBE which typically generate N2 + species with high kinetic energies. The causes of compressive stress in this case may instead be related to a trend commonly observed in vapor-deposited thin films. Such films typically experience... with the strain information hich is found to be 270±25 GPa. Residual m growth temperature and film thickness#2; d by the differential thermal contraction ic compressive stresses generated during .1063/1.2217106#5; Accurate determination of residual stresses...

Moram, M A; Barber, Z H; Humphreys, C J; Joyce, T B; Chalker, P R

2006-07-21T23:59:59.000Z

55

Photovoltaic Polycrystalline Thin-Film Cell Basics | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Polycrystalline Thin-Film Cell Basics Polycrystalline Thin-Film Cell Basics Photovoltaic Polycrystalline Thin-Film Cell Basics August 20, 2013 - 2:36pm Addthis Polycrystalline thin-film cells are made of many tiny crystalline grains of semiconductor materials. The materials used in these cells have properties that are different from those of silicon. Thin-film cells have many advantages over their thick-film counterparts. For example, they use much less material. The cell's active area is usually only 1 to 10 micrometers thick, whereas thick films typically are 100 to 300 micrometers thick. Also, thin-film cells can usually be manufactured in a large-area process, which can be an automated, continuous production process. Finally, they can be deposited on flexible substrate materials. The term thin film comes from the method used to deposit the film, not from

56

ThinFilms  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Films Thin Films Manufacturing Technologies The Thin Film laboratory provides a variety of vapor deposition processes and facilities for cooperative research and development. Available capabilities include electron beam evaporation, sputter deposition, reactive deposi- tion processes, atomic layer deposition (ALD) and specialized techniques such as focused ion beam induced chemical vapor deposition. Equipment can be reconfigured for prototyping, or it can be dedicated to long-term research, development and manufacturing. Most sputter and evaporative deposition systems are capable of depositing multiple materials. Deposition capabilities and expertise * Deposition of a large variety of thin film mate- rials * Multiple sputter deposition systems - Capable of depositing four materials in a

57

Superhydrophobic Thin Film Coatings  

Exploiting its expertise with thin films and superhydrophobic materials, ORNL has developed a simple, inexpensive way to apply and reliably bond ...

58

CARS of Thin Films  

Science Conference Proceedings (OSTI)

... as a thin film diagnostic. Surface enhanced Raman scattering, SERS, has been used to probe the interfacial region of thin polymer films on metal ...

2012-10-02T23:59:59.000Z

59

Overview and Challenges of Thin Film Solar Electric Technologies  

DOE Green Energy (OSTI)

In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

Ullal, H. S.

2008-12-01T23:59:59.000Z

60

Design, construction and testing of a high-vacuum anneal chamber for in-situ crystallisation of silicon thin-film solar cells.  

E-Print Network (OSTI)

??Thin-film solar cells on glass substrates are likely to have a bright future due to the potentially low costs and the short energy payback times.… (more)

Weber, Jürgen Wolfgang

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

A survey of thin-film solar photovoltaic industry & technologies  

E-Print Network (OSTI)

A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

Grama, Sorin

2007-01-01T23:59:59.000Z

62

NREL: Photovoltaics Research - Thin Film Photovoltaic Partnership Project  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed the United States to attain world leadership in this area of solar technology. Three national R&D teams focused on thin-film semiconductor materials: amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS) and its alloys. The Module Reliability Team and Environmental Health and Safety Team were crosscutting. The teams comprised researchers from the solar industry, academia, and NREL who focused their efforts on improving materials, devices, and manufacturing processes-all

63

Thin film hydrogen sensor  

DOE Patents (OSTI)

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

Cheng, Yang-Tse (Rochester Hills, MI); Poli, Andrea A. (Livonia, MI); Meltser, Mark Alexander (Pittsford, NY)

1999-01-01T23:59:59.000Z

64

Thin film tritium dosimetry  

DOE Patents (OSTI)

The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

Moran, Paul R. (Madison, WI)

1976-01-01T23:59:59.000Z

65

Innovative Characterization of Amorphous and Thin-Film Silicon for Improved Module Performance: 1 February 2005 - 31 July 2008  

DOE Green Energy (OSTI)

Electron spin resonance and nuclear magnetic resonance was done on amorphous silicon samples (modules with a-Si:H and a-SixGe1-x:H intrinsic layer) to study defects that contribute to Staebler-Wronski effect.

Taylor, P. C.; Williams, G. A.

2009-09-01T23:59:59.000Z

66

Research on amorphous-silicon-based thin-film photovoltaic devices: Semiannual subcontract report, 1 July 1987--31 December 1987  

DOE Green Energy (OSTI)

The objective of this work is to develop 13% (aperture area) efficient, 850-cm/sup 2/ four-terminal hybrid tandem submodules. The module design consists of a copper-indium-diselenide (CIS)-based bottom circuit and a semitransparent, thin-film silicon-hydrogen (TFS)-based top circuit. High-performance, semitransparent TFS devices and submodules were fabricated in which ZnO was used in the front and rear transparent conductors. High-performance CIS devices and submodules were also fabricated; however, the location and nature of the junction are not yet understood. Representative four-terminal hybrid tandem devices and submodules were fabricated from TFS and CIS component circuits. Optical coupling between the circuits was lower than expected, because of reflection losses at key interfaces. Efficiencies obtained for these devices and modules include 14.17% for a four-terminal, 4-cm/sup 2/ tandem cell and 12.3% for a four-terminal, tandem module. 7 refs., 90 figs.

Bottenberg, W.; Mitchell, K.; Wieting, R.

1988-05-01T23:59:59.000Z

67

Fluorination of amorphous thin-film materials with xenon fluoride  

DOE Patents (OSTI)

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

Weil, Raoul B. (Haifa, IL)

1988-01-01T23:59:59.000Z

68

Recent technological advances in thin film solar cells  

DOE Green Energy (OSTI)

High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

Ullal, H.S.; Zwelbel, K.; Surek, T.

1990-03-01T23:59:59.000Z

69

Thin films of silicon on low-cost substrates. Quarterly report No. 5, January 1-March 31, 1978  

DOE Green Energy (OSTI)

Parametric studies of silicon deposition were conducted employing the horizontal Energy Beam system. Chemical equilibrium calculations pertaining to the Energy Beam deposition conditions were performed. These calculations indicated that the reaction efficiency for hydrogen reduction of silicon tetrachloride is over 95% for any chlorosilane concentration at the Energy Beam temperature of 4300/sup 0/K. Because lower temperatures exist near the substrate surfaces, the kinetics of establishing the low temperature equilibrium will determine obtainable material efficiencies. From deposition experiments, the material efficiency was found to be strongly dependent on input chlorosilane concentrations. The highest material efficiency and growth rate obtained concurrently to date were 70% and 10 ..mu..m/min using the horizontal Energy Beam system. The Thermal Expansion Shear Separation (TESS) process for producing self supporting silicon films was further investigated.

Sarma, K.R.; Gurtler, R.W.; Baghdadi, A.; Cota, M.

1978-01-01T23:59:59.000Z

70

Thin-film amorphous silicon alloy research partnership, Phase I. Annual technical progress report, February 2, 1995--February 1, 1996  

DOE Green Energy (OSTI)

The principal objective of this R&D program is to expand, enhance and accelerate knowledge and capabilities for the development of high-performance, two-terminal multifunction amorphous silicon (a-Si) alloy modules. The near-term goal of the program is to achieve 12% stable module efficiency by 1998 using the multifunction approach. This report describes research on back reflectors of Ag/TiO{sub 2}/ZnO.

Guha, S. [United Solar Systems Corp., Troy, MI (United States)

1996-04-01T23:59:59.000Z

71

Thin Film Nanocomposites for Thermoelectric Applications  

Science Conference Proceedings (OSTI)

Presentation Title, Thin Film Nanocomposites for Thermoelectric Applications ... Abstract Scope, Thin film nanocomposites comprised of refractory metals and ...

72

NMR characterization of thin films  

SciTech Connect

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

Gerald, II, Rex E. (Brookfield, IL); Klingler, Robert J. (Glenview, IL); Rathke, Jerome W. (Homer Glen, IL); Diaz, Rocio (Chicago, IL); Vukovic, Lela (Westchester, IL)

2008-11-25T23:59:59.000Z

73

Solar photovoltaic technology: The thin film option  

DOE Green Energy (OSTI)

Photovoltaics (PV) the direct conversion of sunlight to electricity was first discovered by scientists at the Bell Labs in 1954. In the late 1960's and 1970's most of the solar cell technology has been used for space applications to power satellites. The main work horse for the PV technology has been crystalline silicon (Si) solar cells. Over the past 15 years this has led to cost reduction from $35/kWh to about $0.30/kWh at the present time. Demonstrated reliability of 20 years or more has resulted in acceptance by several utilities. However, cost reductions in crystalline Si solar cells have been limited by the cost of wafering of ingots and the attendant loss of material. A number of Si sheet solar cells are also being investigated. In the past decade the emphasis of the research and development effort has been focused on thin film solar cells, which have the potential for generating power at much lower cost of $1-2/Wp. Thin film solar cells that are presently being investigated and are generating global attention are: amorphous silicon (a-Si:H), cadmium telluride (CdTe), and copper indium diselenide (CuInSe/sub 2,/ or CIS). In the past few years, considerable progress has been; made by all three of these thin film solar cells. This paper reviews the current status and future potential of these exiting thin film solar cell technologies.

Ullal, H.S.; Zweibel, K.; Sabisky, E.S.; Surek, T.

1988-01-01T23:59:59.000Z

74

Thin film photovoltaic cell  

DOE Patents (OSTI)

A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

Meakin, John D. (Newark, DE); Bragagnolo, Julio (Newark, DE)

1982-01-01T23:59:59.000Z

75

Effects of interlayers on the scratch adhesion performance of ultra-thin films of copper and gold on silicon substrates  

SciTech Connect

Scratch testing has long been used to assess the adhesion of a film to its substrate. As film thicknesses have decreased, the need for greater precision and sensitivity in the scratch testing apparatus has increased. To this end, a nanoindenter was modified to make finely controlled, low-load scratches. Scratches at various loads and two orientations of a Berkovich scratching diamond were made in films of 100 nm of gold and 200 nm of copper, each on single crystal silicon. For each film type, samples with no interlayer, with an SiO{sub 2} interlayer, and with a TiW on SiO{sub 2} interlayer were tested. The scratch morphology was found to vary in a regular way with load, diamond orientation and interlayer material.

McAdams, S.D.; Tsui, T.Y.; Pharr, G.M. [Rice Univ., Houston, TX (United States); Oliver, W.C. [Nano Instruments, Inc., Knoxville, TN (United States)

1995-02-01T23:59:59.000Z

76

Thin-film optical initiator  

DOE Patents (OSTI)

A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

Erickson, Kenneth L. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

77

Thin film superconductor magnetic bearings  

DOE Patents (OSTI)

A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

Weinberger, Bernard R. (Avon, CT)

1995-12-26T23:59:59.000Z

78

The state of the art of thin-film photovoltaics  

DOE Green Energy (OSTI)

Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

Surek, T.

1993-10-01T23:59:59.000Z

79

Characterization of amorphous silicon thin films and PV devices: Phase 1 annual technical report: January 1998--January 1999  

DOE Green Energy (OSTI)

Major accomplishments of the previous year include: (1) an evaluation of the potential for n-type doping of a-SiS{sub x}:H and a-SiSe{sub x}:H alloys, (2) an investigation of the optically induced metastabilities in a-SiS{sub x}:H and a-SiSe{sub x}:H alloys with regard to their potential use in photovoltaic applications, and (3) a more detailed understanding of the kinetics of light-induced electron spin resonance (ESR) due to carriers trapped in localized band-tail states in a-Si:H. Also of importance are preliminary measurements of the defects and metastabilities in hot-wire samples of a-Si:H and in samples of a-Si:H made under strong hydrogen dilution. The preliminary measurements on hydrogen dilution suggest that the production of neutral silicon dangling bonds is not suppressed from the standard material even though there appears to be an improvement in the stability of cells made using the hydrogen-dilution process. The new three-chamber, load-locked plasma-enhanced chemical vapor deposition system is functioning and producing intrinsic and doped films of a-Si:H. Plans for the next year include the production of high quality devices using this new deposition system.

Taylor, P.C.

1999-10-27T23:59:59.000Z

80

Thin Films and Interfaces Committee  

Science Conference Proceedings (OSTI)

The Thin Films and Interfaces Committee is part of the Electronic, Magnetic, and Photonic Materials Division;. Our Mission: Promotes knowledge of the science ...

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Thin film photovoltaic device  

DOE Patents (OSTI)

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

Catalano, A.W.; Bhushan, M.

1982-08-03T23:59:59.000Z

82

Thin film hydrogen sensor  

DOE Green Energy (OSTI)

A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

Lauf, Robert J. (Oak Ridge, TN); Hoffheins, Barbara S. (Knoxville, TN); Fleming, Pamela H. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

83

Thin film photovoltaic device  

DOE Patents (OSTI)

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

Catalano, Anthony W. (Wilmington, DE); Bhushan, Manjul (Wilmington, DE)

1982-01-01T23:59:59.000Z

84

Thin film photovoltaic device with multilayer substrate  

DOE Patents (OSTI)

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Catalano, Anthony W. (Rushland, PA); Bhushan, Manjul (Wilmington, DE)

1984-01-01T23:59:59.000Z

85

Thin film ion conducting coating  

DOE Patents (OSTI)

Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

Goldner, Ronald B. (Lexington, MA); Haas, Terry (Sudbury, MA); Wong, Kwok-Keung (Watertown, MA); Seward, George (Arlington, MA)

1989-01-01T23:59:59.000Z

86

Thin films: Past, present, future  

DOE Green Energy (OSTI)

This report describes the characteristics of the thin film photovoltaic modules necessary for an acceptable rate of return for rural areas and underdeveloped countries. The topics of the paper include a development of goals of cost and performance for an acceptable PV system, a review of current technologies for meeting these goals, issues and opportunities in thin film technologies.

Zweibel, K.

1995-04-01T23:59:59.000Z

87

Vertically Aligned Nanocomposite Thin Films  

E-Print Network (OSTI)

Vertically aligned nanocomposite (VAN) thin films have recently stimulated significant research interest to achieve better material functionality or multifunctionalities. In VAN thin films, both phases grow epitaxially in parallel on given substrates and form a unique nano-checkerboard structure. Multiple strains, including the vertical strain which along the vertical interface and the substrate induced strain which along the film and substrate interface, exist in VAN thin films. The competition of these strains gives a promise to tune the material lattice structure and future more the nanocomposite film physical properties. Those two phases in the VAN thin films are selected based on their growth kinetics, thermodynamic stability and epitaxial growth ability on given substrates. In the present work, we investigated unique epitaxial two-phase VAN (BiFeO3)x:(Sm2O3)1-x and (La0.7Sr0.3MnO3)x:(Mn3O4)1-x thin film systems by pulsed laser deposition. These VAN thin films exhibit a highly ordered vertical columnar structure with good epitaxial quality. The strain of the two phases can be tuned by deposition parameters, e.g. deposition frequency and film composition. Their strain tunability is found to be related directly to the systematic variation of the column widths and domain structures. Their physical properties, such as dielectric loss and ferromagnetisms can be tuned systematically by this variation. The growth morphology, microstructure and material functionalities of VAN thin films can be varied by modifying the phase ratio, substrate orientation or deposition conditions. Systematic study has been done on growing (SrTiO3)0.5:(MgO)0.5 VAN thin films on SrTiO3 and MgO substrates, respectively. The variation of column width demonstrates the substrate induced strain plays another important role in the VAN thin film growth. The VAN thin films also hold promise in achieving porous thin films with ordered nanopores by thermal treatment. We selected (BiFeO3)0.5:(Sm2O3)0.5 VAN thin films as a template and get uniformly distributed bi-layered nanopores. Controllable porosity can be achieved by adjusting the microstructure of VAN (BiFeO3):(Sm2O3) thin films and the annealing parameters. In situ heating experiments within a transmission electron microscope column provide direct observations into the phases transformation, evaporation and structure reconstruction during the annealing. Systematic study in this dissertation demonstrate that the vertically aligned nanocomposite microstructure is a brand new architecture in thin films and an exciting approach that promises tunable material functionalities as well as novel nanostructures.

Bi, Zhenxing

2011-05-01T23:59:59.000Z

88

NIST Hydrogen Storage in Thin Films  

Science Conference Proceedings (OSTI)

Hydrogen Storage Optimization in Thin Film Combinatorial Alloys. ... Magnesium Thin Films," International Journal of Hydrogen Energy, doi:10.1016/j ...

2013-04-01T23:59:59.000Z

89

Thin Film and Nanostructure Processing Group Homepage  

Science Conference Proceedings (OSTI)

... The Thin Film and Nanostructure Processing Group is one of seven ... Deposition of thin films Electrodeposition of metals and alloys Evaporation of ...

2012-10-15T23:59:59.000Z

90

Metals Thin-Films Information at NIST  

Science Conference Proceedings (OSTI)

NIST Home > Metals Thin-Films Information at NIST. Metals Thin-Films Information at NIST. (the links below are a compilation ...

2010-05-24T23:59:59.000Z

91

Optical Characterization of Advanced Thin Films  

Science Conference Proceedings (OSTI)

... Recently, thin films of spun-cast poly(2,5-bis(3-alkylthiophen ... been demonstrated to exhibit exceptional hole mobilities in thin film transistors (TFTs ...

2012-10-02T23:59:59.000Z

92

Thin Film Solar Technologies | Open Energy Information  

Open Energy Info (EERE)

Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon Thin Film Solar Technologies Jump to: navigation, search Name Thin Film Solar Technologies...

93

Interfaces in Nanostructured Functional Oxide Thin Films  

Science Conference Proceedings (OSTI)

The thin film systems include high temperature superconductors (HTS), thin film solid oxide fuel cells (SOFC), and other functional oxide systems. Detailed ...

94

CFN | Thin Films Group  

NLE Websites -- All DOE Office Websites (Extended Search)

Materials Synthesis and Characterization Facility Materials Synthesis and Characterization Facility Thin-Film Processing Facility Online Manager (FOM) website FOM manual ESR for lab 1L32 (High-Resolution SEM and x-ray microanalysis) CFN Operations Safety Awareness (COSA) form for 1L32 (ESR #1) Technical article on LABE detector (Analytical SEM) Request form for off-hours access (.doc, First time only, renewals done via email) Lab Tool capabilities Primary contact Training schedule Backup contact Booking calendar Booking rules SOP 1L32 Analytical SEM Camino Thurs 10-12 PM Stein FOM yes yes Hitachi S-4800 SEM Stein Tues 1-3 PM Black FOM no yes booking calendar: yes = need to reserve tool time in calendar before using tool booking rules: yes = specific rules exist for reserving tool time SOP = standard operating procedure (basic instructions)

95

Effects of Different Precursor's Concentration on the Properties of Zinc Oxide Thin Films  

Science Conference Proceedings (OSTI)

Zinc oxide (ZnO) thin films were successfully grown on silicon substrate with different molarities, by a sol-gel method. In the process, the molarities were varied from 0.2-1.0 M and it was found that increasing in molarities had affected the structure of ZnO thin films. The properties of the thin films were characterized and studied by ultraviolet-visible spectroscopy (UV-Vis) and photoluminescence spectrometer (PL). It was found that the molarities affect the optical properties of the resultant ZnO thin films.

Malek, M. F.; Zakaria, N.; Sahdan, M. Z.; Mamat, M. H. [Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Khusaimi, Z. [NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Rusop, M. [Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)

2010-07-07T23:59:59.000Z

96

Silicon ribbon growth by a capillary action shaping technique. Quarterly technical progress report number 7  

DOE Green Energy (OSTI)

The crystal-growth method under investigation is a capillary action shaping technique. Meniscus shaping for the desired ribbon geometry occurs at the vertex of a wettable die. As ribbon growth depletes the melt meniscus, capillary action supplies replacement material. Progress in 50-mm-wide ribbon growth is detailed. Over 11 meters of uniform 50-mm-wide ribbon have been grown this quarter. Fuller advantage has been taken of the potential benefits of high melt meniscus (HMM) growth. 50-mm ribbons less than 0.27 mm in thickness were produced with zero SiC particle density, smooth reflective surfaces, and lifetimes greater than 20 ..mu..sec for electrical charge carriers. It has also been demonstrated that quartz crucibles can be used through at least four melt-down cycles. A computer analysis model of competing sheet growth techniques is presented and discussed. (WHK)

Schwuttke, G.H.; Ciszek, T.F.; Kran, A.

1977-04-01T23:59:59.000Z

97

Thin Film and nanostructure Processing Staff  

Science Conference Proceedings (OSTI)

Thin Film Nanostructure Staff Directory. John Bonevich, Group Leader. Shari Beauchamp, Office Assistant. STAFF & NRC POSTDOCS. ...

2013-06-11T23:59:59.000Z

98

Integrated photonic structures for light trapping in thin-film Si solar cells  

E-Print Network (OSTI)

We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

Sheng, Xing

99

Preparation of thin films by ablation with ANACONDA ion beam generator  

Science Conference Proceedings (OSTI)

Thin films of silicon carbide are produced by using the technology of ion beam evaporation. Various analytical methods are used to analyze film thickness, film composition and crystallization for samples obtained with different target-substrate distances.

Yatsui, K.; Jiang, W. [Nagaoka Univ. of Technology (Japan). Lab. of Beam Technology; Davis, H.A.; Olson, J.C.; Waganaar, W.J.; Rej, D. [Los Alamos National Lab., NM (United States)

1996-12-31T23:59:59.000Z

100

Polycrystalline thin-film solar cells and modules  

DOE Green Energy (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Polycrystalline thin-film solar cells and modules  

DOE Green Energy (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

102

Applications of Passive Thin Films  

DOE Green Energy (OSTI)

The physical properties of thin films affect the performance and durability of nearly every solar energy conversion device. Familiar examples of thin films for solar applications are optical materials and protective coatings. Optimized optical properties are key to cost-effective photothermal conversion where individual components must have high absorptance, reflectance, or transmittance. The protection of sensitive substrates from corrosion and/or erosion is essential to ensure adequate component and system lifetime. Such substrates range from photovoltaic materials operating near room temperature to turbine blade structural alloys in hostile environments at very high temperatures (>1,000 degrees C). Although much has been written on particular categories of thin-film materials for solar energy (for example, absorbers for receiver surfaces), to date no one has provided an overview of the spectrum of applications for passive thin films in solar energy. This work is such an overview and also reviews the material state of the art as described in the current literature. Active thin film devices such as photovoltaics and thermoeleetrics are not discussed.

Call, P. J.

1979-05-01T23:59:59.000Z

103

Uncooled thin film pyroelectric IR detector with aerogel thermal isolation  

Science Conference Proceedings (OSTI)

Uncooled pyroelectric IR imaging systems, such as night vision goggles, offer important strategic advantages in battlefield scenarios and reconnaissance surveys. Until now, the current technology for fabricating these devices has been limited by low throughput and high cost which ultimately limit the availability of these sensor devices. We have developed and fabricated an alternative design for pyroelectric IR imaging sensors that utilizes a multilayered thin film deposition scheme to create a monolithic thin film imaging element on an active silicon substrate for the first time. This approach combines a thin film pyroelectric imaging element with a thermally insulating SiO{sub 2} aerogel thin film to produce a new type of uncooled IR sensor that offers significantly higher thermal, spatial, and temporal resolutions at a substantially lower cost per unit. This report describes the deposition, characterization and optimization of the aerogel thermal isolation layer and an appropriate pyroelectric imaging element. It also describes the overall integration of these components along with the appropriate planarization, etch stop, adhesion, electrode, and blacking agent thin film layers into a monolithic structure. 19 refs., 8 figs., 6 tabs.

Ruffner, J.A.; Clem, P.G.; Tuttle, B.A. [and others

1998-01-01T23:59:59.000Z

104

Thin-film Lithium Batteries  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin-Film Battery with Lithium Anode Courtesy of Oak Ridge National Laboratory, Materials Science and Technology Division Thin-Film Lithium Batteries Resources with Additional Information The Department of Energy's 'Oak Ridge National Laboratory (ORNL) has developed high-performance thin-film lithium batteries for a variety of technological applications. These batteries have high energy densities, can be recharged thousands of times, and are only 10 microns thick. They can be made in essentially any size and shape. Recently, Teledyne licensed this technology from ORNL to make batteries for medical devices including electrocardiographs. In addition, new "textured" cathodes have been developed which have greatly increased the peak current capability of the batteries. This greatly expands the potential medical uses of the batteries, including transdermal applications for heart regulation.'

105

Semiconductor-nanocrystal/conjugated polymer thin films  

DOE Patents (OSTI)

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Alivisatos, A. Paul (Oakland, CA); Dittmer, Janke J. (Munich, DE); Huynh, Wendy U. (Munich, DE); Milliron, Delia (Berkeley, CA)

2010-08-17T23:59:59.000Z

106

Thin film-coated polymer webs  

DOE Patents (OSTI)

The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

Wenz, Robert P. (Cottage Grove, MN); Weber, Michael F. (Shoreview, MN); Arudi, Ravindra L. (Woodbury, MN)

1992-02-04T23:59:59.000Z

107

Thin Film Deposition Method for Sensor Manufacturing  

Scientists at Los Alamos National Laboratory (LANL) have developed an innovative method for gas sensor manufacturing using a thin film deposition. The thin film requires very little material and can be applied in high throughput applications.

108

Thin Film Photovoltaics - Programmaster.org  

Science Conference Proceedings (OSTI)

Thin Film Structures for Energy Efficient Systems: Thin Film Photovoltaics ... Full- inorganic Heterojunction Ink-printed Solar Cells: Seigo Ito1; 1University of Hyogo ... electrochemical impedance spectroscopy (EIS) measurements were used for ...

109

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Phase II annual subcontract report, 1 January 1985--31 January 1986  

DOE Green Energy (OSTI)

This report presents results of the second phase of research on high-efficiency, single-junction, monolithic, thin-film a-Si solar cells. Five glow-discharge deposition systems, including a new in-line, multichamber system, were used to grow both doped and undoped a-Si:H. A large number of silane and disilane gas cylinders were analyzed with a gas chromatography/mass spectroscopy system. Strong correlations were found between the breakdown voltage, the deposition rate, the diffusion length, and the conversion efficiency for varying cathode-anode separations in a DC glow-discharge deposition mode. Tin oxide films were grown by chemical vapor deposition with either tetramethyl tin (TMT) or tin tetrachloride (TTC). The best were grown with TMT, but TTC films had a more controlled texture for light trapping and provided a better contact to the p-layer. The best results were obtained with 7059 glass substrates. Efficiencies as high as 10.86% were obtained in p-i-n cells with superlattice p-layers and as high as 10.74% in cells with both superlattice p- and n-layers. Measurements showed that the boron-doping level in the p-layer can strongly affect transport in the i-layer, which can be minimized by reactive flushing before i-layer deposition. Stability of a-Si:H cells is improved by light doping. 51 refs., 64 figs., 21 tabs.

Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; Catalano, A.; D'Aiello, R.V.; Dickson, C.R.; McVeigh, J.; Newton, J.; O'Dowd, J.; Oswald, R.S.; Rajan, K.

1988-09-01T23:59:59.000Z

110

Magnetoelectric Multiferroic Thin Films and Multilayers  

Science Conference Proceedings (OSTI)

Scope, The symposium will cover thin films, single crystals, normal/relaxor ferroelectrics, piezoelectric ceramics, magnetoelectric composites, multiferroic ...

111

Magnetic behaviour of europium epitaxial thin films  

Science Conference Proceedings (OSTI)

... Magnetic behaviour of europium epitaxial thin films. Philippe Mangin, University of Nancy and NCNR. We present the magnetic ...

112

MST: Organizations: Thin Film, Vacuum, and Packaging  

NLE Websites -- All DOE Office Websites (Extended Search)

Processes & Services Electronic Fabrication Manufacturing Process Science & Technology Thin Film, Vacuum, & Packaging Organic Materials Ceramic & Glass Meso Manufacturing &...

113

Electronic processes in thin-film PV materials. Final report  

DOE Green Energy (OSTI)

The electronic and optical processes in an important class of thin-film PV materials, hydrogenated amorphous silicon (a-Si:H) and related alloys, have been investigated using several experimental techniques designed for thin-film geometries. The experimental techniques include various magnetic resonance and optical spectroscopies and combinations of these two spectroscopies. Two-step optical excitation processes through the manifold of silicon dangling bond states have been identifies as important at low excitation energies. Local hydrogen motion has been studied using nuclear magnetic resonance techniques and found to be much more rapid than long range diffusion as measured by secondary ion mass spectroscopy. A new metastable effect has been found in a-Si:H films alloyed with sulfur. Spin-one optically excited states have been unambiguously identified using optically detected electron spin resonance. Local hydrogen bonding in microcrystalline silicon films has been studied using NMR.

Taylor, P.C.; Chen, D.; Chen, S.L. [and others

1998-07-01T23:59:59.000Z

114

Carbon, oxygen and their interaction with intrinsic point defects in solar silicon ribbon material. Annual report, September 1982-September 1983  

DOE Green Energy (OSTI)

This report first provides some background information on intrinsic point defects, and on carbon and oxygen in silicon in so far as it may be relevant for the efficiency of solar cells fabricated from EFG ribbon material. We discuss the co-precipitation of carbon and oxygen and especially of carbon and silicon self interstitials. A simple model for the electrical activity of carbon-self-interstitial agglomerates is presented. We assume that the self-interstitial content of these agglomerates determines their electrical activity and that both compressive stresses (high self-interstitial content) and tensile stresses (low self-interstitial content) give rise to electrical activity of the agglomerates. The self-interstitial content of these carbon-related agglomerates may be reduced by an appropriate high-temperature treatment and enhanced by a supersaturation of self-interstitials generated during formation of the p-n junction of solar cells. It is suggested that oxygen present in supersaturation in carbon-rich silicon may be induced to form SiO/sub 2/ precipitates by self-interstitials generated during phosphorus diffusion. It is proposed that the SiO/sub 2/-Si interface of the precipates gives rise to a continuum of donor states and that these interface states are responsible for at least part of the light-enhancement effects observed in oxygen containing EFG silicon after phosphorus diffusion.

Goesele, U.; Ast, D.G.

1983-10-01T23:59:59.000Z

115

Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint  

DOE Green Energy (OSTI)

We report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. In CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.

Ullal, H. S.; von Roedern, B.

2007-09-01T23:59:59.000Z

116

Studies of pure and nitrogen-incorporated hydrogenated amorphous carbon thin films and their possible application for amorphous silicon solar cells  

Science Conference Proceedings (OSTI)

Hydrogenated amorphous carbon (a-C:H) and nitrogen-incorporated a-C:H (a-C:N:H) thin films were deposited using radio frequency-plasma-enhanced chemical vapor deposition technique and studied for their electrical, optical, and nano-mechanical properties. Introduction of nitrogen and increase of self bias enhanced the conductivity of a-C:H and a-C:N:H films, whereas current-voltage measurement reveals heterojunction formation due to their rectifying behavior. The bandgap of these films was changed over wide range from 1.9 eV to 3.45 eV by varying self bias and the nitrogen incorporation. Further, activation energy was correlated with the electronic structure of a-C:H and a-C:N:H films, and conductivity was discussed as a function of bandgap. Moreover, a-C:N:H films exhibited high hardness and elastic modulus, with maximum values as 42 GPa and 430 GPa, respectively, at -100 V. Observed fascinating electrical, optical, and nano-mechanical properties made it a material of great utility in the development of optoelectronic devices, such as solar cells. In addition, we also performed simulation study for an a-Si:H solar cell, considering a-C:H and C:N:H as window layers, and compared their performance with the a-Si:H solar cell having a-SiC:H as window layer. We also proposed several structures for the development of a near full-spectrum solar cell. Moreover, due to high hardness, a-C:N:H films can be used as a protective and encapsulate layer on solar cells, especially in n-i-p configuration on metal substrate. Nevertheless, a-C:H and a-C:N:H as a window layer can avoid the use of additional hard and protective coating and, hence, minimize the cost of the product.

Dwivedi, Neeraj [Physics of Energy Harvesting Division, National Physical Laboratory (CSIR), K.S. Krishnan Road, New Delhi 110012 (India); Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India); Kumar, Sushil [Physics of Energy Harvesting Division, National Physical Laboratory (CSIR), K.S. Krishnan Road, New Delhi 110012 (India); Malik, Hitendra K. [Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)

2012-01-01T23:59:59.000Z

117

Method for formation of thin film transistors on plastic substrates  

DOE Patents (OSTI)

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

1998-10-06T23:59:59.000Z

118

Study program to develop and evaluate die and container materials for the growth of silicon ribbons  

DOE Green Energy (OSTI)

The Large Area Silicon Sheet Growth Task objective of lowering the cost of silicon photovoltaic material requires the development of materials which exhibit improved chemical and dimensional stability in contact with molten silicon. These materials may find application as containers and/or shaping dies in processes such as edge-defined film growth. The development and evaluation of proprietary coatings of pure silicon carbide, silicon nitride and aluminum nitride on less pure hot pressed substrates of the respective ceramic materials are described. Silicon sessile drop experiments were performed on coated test specimens under controlled oxygen partial pressures. X-ray diffraction and SEM Characterization was performed prior to testing. The reaction interfaces were characterized after testing with optical and scanning electron microscopy and Auger electron spectroscopy. Increasing the oxygen partial pressure was found to increase the molten silicon contact angle, apparently because adsorbed oxygen lowers the solid-vapor interfacial free energy. Adsorbed oxygen was also found to increase the degree of attack of molten silicon upon the chemical vapor deposited coatings. Prototypic containers and dies were delivered and cost projections show that reasonably priced, coated, molten silicon resistant refractory material shapes are obtainable.

Addington, L.A.; Ownby, P.D.; Yu, B.B.; Barsoum, M.W.; Romero, H.V.; Zealer, B.G.

1979-12-01T23:59:59.000Z

119

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1996-01-01T23:59:59.000Z

120

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells. 4 figs.

Lauf, R.J.

1996-04-02T23:59:59.000Z

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

122

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents (OSTI)

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells. 4 figures.

Lauf, R.J.

1994-04-26T23:59:59.000Z

123

Structure of Silicon-Based Thin Film Solar Cell Materials: Annual Technical Progress Report, 1 April 2002--31 August 2003  

DOE Green Energy (OSTI)

The purpose of this research is to achieve a better understanding to improve materials used as the intrinsic layers of amorphous and microcrystalline silicon-based solar cells. Fundamental structural properties will be investigated on atomic and nano-scales. A powerful combination of techniques will be used: analytical high-resolution transmission electron microscopy (HRTEM), including special associated spectroscopic methods, small-angle scattering techniques (SAXS, ASAXS, SANS), and conventional wide-angle X-ray diffraction (XRD).

Williamson, D. L.

2004-01-01T23:59:59.000Z

124

Polycrystalline thin-film technology: Recent progress in photovoltaics  

DOE Green Energy (OSTI)

Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe{sub 2}), cadmium telluride (CdTe), and thin-film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin-film CuInSe{sub 2}, has made some rapid advances in terms of high efficiency and long-term reliability. For CuInSe{sub 2} power modules, a world record has been reported on a 0.4-m{sup 2} module with an aperture-area efficiency of 10.4% and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe{sub 2} modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 cm{sup 2}. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10%; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

1991-12-01T23:59:59.000Z

125

Method of producing amorphous thin films  

DOE Patents (OSTI)

Disclosed is a method of producing thin films by sintering which comprises: a. coating a substrate with a thin film of an inorganic glass forming parulate material possessing the capability of being sintered, and b. irridiating said thin film of said particulate material with a laser beam of sufficient power to cause sintering of said material below the temperature of liquidus thereof. Also disclosed is the article produced by the method claimed.

Brusasco, Raymond M. (Livermore, CA)

1992-01-01T23:59:59.000Z

126

Method of preparing high-temperature-stable thin-film resistors  

DOE Patents (OSTI)

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Raymond, L.S.

1980-11-12T23:59:59.000Z

127

Method of preparing high-temperature-stable thin-film resistors  

DOE Patents (OSTI)

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Raymond, Leonard S. (Tucson, AZ)

1983-01-01T23:59:59.000Z

128

Characterization of Micro-, Nano-, and Thin Films  

Science Conference Proceedings (OSTI)

Feb 18, 2010... CdS:In Thin Films Prepared by the Spray-Pyrolysis Technique: Shadia Ikhmayies1; Riyad Ahmad-Bitar1; 1University of Jordan

129

Enhanced Thin Film Organic Photovoltaic Devices  

A novel structure design for thin film organic photovoltaic (OPV) devices provides a system for increasing the optical absorption in the active layer. ...

130

Method of producing amorphous thin films  

DOE Patents (OSTI)

This invention dicloses a method for sintering particulate material (such as silica) with a laser beam to produce amorphous optical thin films on substrates.

Brusasco, R.M.

1991-12-31T23:59:59.000Z

131

Infrared Analysis of Advanced Thin Film Materials  

Science Conference Proceedings (OSTI)

The goals of timely and cost effective integration of these new materials into ... most widely accepted method for production monitoring of transparent thin films.

132

Polycrystalline Thin Film Solar Cell Technologies: Preprint  

DOE Green Energy (OSTI)

Rapid progress is being made by CdTe and CIGS-based thin-film PV technologies in entering commercial markets.

Ullal, H. S.

2008-12-01T23:59:59.000Z

133

Mechanical Properties of Thin Film Metallic Glass  

Science Conference Proceedings (OSTI)

Because of these and other properties, thin film metallic-glasses (TFMGs) are a promising structural material for fabricating the next generation of micro- and ...

134

Textured Ultrafine Grained Al Thin Films  

Science Conference Proceedings (OSTI)

Symposium, Fatigue and Fracture of Thin Films and Nanomaterials. Presentation Title, In-Situ ACOM-TEM Nanomechanical Testing of Textured Ultrafine ...

135

Surface Sensitive Scattering from Thin Films  

Science Conference Proceedings (OSTI)

... Thin films of few tenths of angstroms are becoming the staple of the electronic ... a powerful tool for the basic understanding of the film microstructure. ...

136

Thin Film Structures for Energy Efficient Systems  

Science Conference Proceedings (OSTI)

Thin film based energy generation and storage devices - Small scale ... Dye- sensitized Solar Cells with Anodized Aluminum Alloy-based Counter-electrodes.

137

Thin film buried anode battery  

DOE Patents (OSTI)

A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

Lee, Se-Hee (Lakewood, CO); Tracy, C. Edwin (Golden, CO); Liu, Ping (Denver, CO)

2009-12-15T23:59:59.000Z

138

Thin-Film Photovoltaic Industry  

Science Conference Proceedings (OSTI)

This report presents an overview of the thin-film (TF) photovoltaic (PV) industry as of the third quarter of 2012, a time in the midst of very rapid changes.  The TFPV industry has seen significantly greater investment in the past 5 to 10 years than in any previous time and up until recently it seemed that this investment was on track to make TFPV a much larger player in the overall PV market.  However, market dynamics have conspired to dim TFPV’s near-term prospects and ...

2012-11-30T23:59:59.000Z

139

Thin film solar energy collector  

DOE Patents (OSTI)

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

1983-11-22T23:59:59.000Z

140

Large area ceramic thin films on plastics: A versatile route via solution processing  

Science Conference Proceedings (OSTI)

A new general route for large area, submicron thick ceramic thin films (crystalline metal oxide thin films) on plastic substrates is presented, where the crystallization of films is guaranteed by a firing process. Gel films are deposited on silicon substrates with a release layer and fired to be ceramic films, followed by transferring onto plastic substrates using adhesives. The ceramic films thus fabricated on plastics exhibit a certain degree of flexibility, implying the possibility of the technique to be applied to high-throughput roll-to-roll processes. Using this technique, we successfully realized transparent anatase thin films that provide high optical reflectance and transparent indium tin oxide thin films that exhibit electrical conductivity on polycarbonate and acrylic resin substrates, respectively. Crystallographically oriented zinc oxide films and patterned zinc oxide films are also demonstrated to be realized on acrylic resin substrates.

Kozuka, H.; Yamano, A.; Uchiyama, H.; Takahashi, M. [Faculty of Chemistry, Materials and Bioengineering, Kansai University, 3-3-35 Yamate-cho, Suita, 564-8680 (Japan); Fukui, T.; Yoki, M.; Akase, T. [Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, 564-8680 (Japan)

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Thin-Film Reliability Trends Toward Improved Stability  

Science Conference Proceedings (OSTI)

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (R{sub d}) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2 {+-} 0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-01-01T23:59:59.000Z

142

Thin-Film Reliability Trends Toward Improved Stability: Preprint  

DOE Green Energy (OSTI)

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (Rd) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2+/-0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-07-01T23:59:59.000Z

143

Eddy Current Testing for Detecting Small Defects in Thin Films  

SciTech Connect

Presented here is a technique of using Eddy Current based Giant Magneto-Resistance sensor (GMR) to detect surface and sub-layered minute defects in thin films. For surface crack detection, a measurement was performed on a copper metallization of 5-10 microns thick. It was done by scanning the GMR sensor on the surface of the wafer that had two scratches of 0.2 mm, and 2.5 mm in length respectively. In another experiment, metal coatings were deposited over the layers containing five defects with known lengths such that the defects were invisible from the surface. The limit of detection (resolution), in terms of defect size, of the GMR high-resolution Eddy Current probe was studied using this sample. Applications of Eddy Current testing include detecting defects in thin film metallic layers, and quality control of metallization layers on silicon wafers for integrated circuits manufacturing.

Obeid, Simon; Tranjan, Farid M. [Electrical and Computer Engineering Department, UNCC (United States); Dogaru, Teodor [Albany Instruments, 426-O Barton Creek, Charlotte, NC 28262 (United States)

2007-03-21T23:59:59.000Z

144

Thin-film optical initiator - Energy Innovation Portal  

A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film.

145

Advances in thin-film solar cells for lightweight space photovoltaic power  

SciTech Connect

The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuInSe2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuInSe2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

Landis, G.A.; Bailey, S.G.; Flood, D.J.

1989-01-01T23:59:59.000Z

146

Thin films of mixed metal compounds  

DOE Patents (OSTI)

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

1985-01-01T23:59:59.000Z

147

Institute of Photo Electronic Thin Film Devices and Technology...  

Open Energy Info (EERE)

Place Tianjin Municipality, China Zip 300071 Sector Solar Product A thin-film solar cell research institute in China. References Institute of Photo-Electronic Thin Film Devices...

148

Daylighting control performance of a thin-film ceramic electrochromic...  

NLE Websites -- All DOE Office Websites (Extended Search)

Daylighting control performance of a thin-film ceramic electrochromic window: Field study results Title Daylighting control performance of a thin-film ceramic electrochromic...

149

Breakthroughs in Thin-Film Magnetic Devices Earn NIST ...  

Science Conference Proceedings (OSTI)

... thin films to control magnetism as a foundation for developing better sensors and memory devices. Computer hard drives that use magnetic thin-film ...

2012-12-13T23:59:59.000Z

150

Amorphous and nanocrystalline Mg2Si thin-film electrodes  

NLE Websites -- All DOE Office Websites (Extended Search)

Contact Us Department Contacts Media Contacts Amorphous and nanocrystalline Mg2Si thin-film electrodes Title Amorphous and nanocrystalline Mg2Si thin-film electrodes...

151

Thin-Film/Low-K Dielectric Constant Measurement  

Science Conference Proceedings (OSTI)

... to pursue a very different approach to dielectric thin-film characterization at ... at NIST; DOW will simply deposit and pattern the thin films on pretested ...

2010-10-05T23:59:59.000Z

152

Geometric shape control of thin film ferroelectrics and resulting structures  

DOE Patents (OSTI)

A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

153

Oxynitride Thin Film Barriers for PV Packaging  

DOE Green Energy (OSTI)

Dielectric thin-film barrier and adhesion-promoting layers consisting of silicon oxynitride materials (SiOxNy, with various stoichiometry) were investigated. For process development, films were applied to glass (TCO, conductive SnO2:F; or soda-lime), polymer (PET, polyethylene terephthalate), aluminized soda-lime glass, or PV cell (a-Si, CIGS) substrates. Design strategy employed de-minimus hazard criteria to facilitate industrial adoption and reduce implementation costs for PV manufacturers or suppliers. A restricted process window was explored using dilute compressed gases (3% silane, 14% nitrous oxide, 23% oxygen) in nitrogen (or former mixtures, and 11.45% oxygen mix in helium and/or 99.999% helium dilution) with a worst-case flammable and non-corrosive hazard classification. Method employed low radio frequency (RF) power, less than or equal to 3 milliwatts per cm2, and low substrate temperatures, less than or equal to 100 deg C, over deposition areas less than or equal to 1000 cm2. Select material properties for barrier film thickness (profilometer), composition (XPS/FTIR), optical (refractive index, %T and %R), mechanical peel strength and WVTR barrier performance are presented.

Glick, S. H.; delCueto, J. A.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

2005-11-01T23:59:59.000Z

154

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering  

Science Conference Proceedings (OSTI)

Silicon dioxide thin films have been deposited successfully on high speed steel (HSS) cutting tool substrates by means of microwave electron cyclotron resonance (MW-ECR) plasma source enhanced RF reactive magnetron sputtering of a pure silica target ... Keywords: SiO2 thin films, Electrical insulation properties, RF magnetron sputtering, Atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS)

Qiyong Zeng; Xiaofeng Zheng; Zhonghua Yu; Yunxian Cui

2010-03-01T23:59:59.000Z

155

Aging phenomena in polystyrene thin films  

E-Print Network (OSTI)

The aging behavior is investigated for thin films of atactic polystyrene through measurements of complex electric capacitance. During isothermal aging process the real part of the electric capacitance increases with aging time, while the imaginary part decreases with aging time. This result suggests that the aging time dependence of the real and imaginary parts are mainly associated with change in thickness and dielectric permittivity, respectively. In thin films, the thickness depends on thermal history of aging even above the glass transition. Memory and `rejuvenation' effects are also observed in the thin films.

Koji Fukao; Hiroki Koizumi

2008-01-05T23:59:59.000Z

156

Thin Film Deposition and Processing  

Science Conference Proceedings (OSTI)

... Applications: Tube 1 (T1), open for future upgrade. Silicon Nitride Deposition (Tube 2): Low Stress recipe. Stoichiometric recipe. ...

2013-09-17T23:59:59.000Z

157

Amorphous silicon-carbon thin films  

DOE Green Energy (OSTI)

This study has shown that it is possible to produce nearly stoichiometric films of a-SiC:H with high hydrogen content by rf sputtering in an atmosphere of argon, propane, and hydrogen. The a-SiC films adhere to a variety of substrates and exhibit better thermal stability than a-Si:H films. The index of refraction is 2.8. The optical gap energy of these films is between 2.0 and 2.2 eV. A series of isochronal annealing steps show that optical gap energies decrease, optical absorption edge widths increase, and that the minimum optical density in the low absorption region increases with annealing above 450/sup 0/C. Infrared measurements show large absorptions at 2100, 1000, 750, and 650 cm/sup -1/ corresponding to SiH stretch, CH wagging, SiC stretch, and SiH wagging vibrational modes. The CH/sub n/ stretch mode near 2900 cm/sup -1/ is very small. Isochronal annealing causes a nearly continuous decrease in the integrated intensity of the SiH stretch mode at 2100 cm/sup -1/. The 2100 absorption peak shape may indicate the presence of SiH/sub 2/ in the film. Comparison of the 2100 and 750 absorption peaks show that the Si-C bonds are more heat resistant than the Si-H bonds. Annealing experiments reveal that the decrease in optical gap energy with increasing annealing temperature is probably not due to change in the Si-H bonds. Rather, the decrease is most likely due to changes or breaks in the C-H bonds and possibly the Si-C bonds. NMR results show that the films have high hydrogen concentrations. Also, NMR results and the integrated intensity for the SiH stretch mode give correct order of magnitude determination of the number and concentration of Si-H bonds in the a-SiC:H films.

Ward, J.F.

1983-09-01T23:59:59.000Z

158

Thin film polycrystalline silicon solar cells  

DOE Green Energy (OSTI)

During the present quarter efficiency of heterostructure solar cells has been increased from 13 to 13.7% for single crystal and from 10.3 to 11.2% for polysilicon. For polysilicon the improvements can be attributed to reductions in grid-area coverage and in reflection losses and for single crystal to a combination of reduction in grid-area coverage and increase in fill factor. The heterostructure cells in both cases were IT0/n-Si solar cells. Degradation in Sn0/sub 2//n-Si solar cells can be greatly reduced to negligible proportions by proper encapsulation. The cells used in stability tests have an average initial efficiency of 11% which reduces to a value of about 10.5% after 6 months of exposure to sunlight and ambient conditions. This small degradation occurs within the first month, and the efficiency remains constant subsequently. The reduction in efficiency is due to a decrease in the open-circuit voltage only, while the short-circuit current and fill factor remain constant. The effects of grain-size on the Hall measurements in polysilicon have been analyzed and interpreted, with some modifications, using a model proposed by Bube. This modified model predicts that the measured effective Hall voltage is composed of components originating from the bulk and space-charge region. For materials with large grains, the carrier concentration is independent of the inter-grain boundary barrier, whereas the mobility is dependent on it. However, for small rains, both the carrier density and mobility depend on the barrier. These predictions are consistant with experimental results of mm-size Wacker polysilicon and ..mu..m-size NTD polysilicon.

Ghosh, A. K.; Feng, T.; Eustace, D. J.; Maruska, H. P.

1980-01-01T23:59:59.000Z

159

Integrated thin film batteries on silicon  

E-Print Network (OSTI)

Monolithic integration has been implemented successfully in complementary metal oxide semiconductor (CMOS) technology and led to improved device performance, increased reliability, and overall cost reduction. The next ...

Ariel, Nava

2005-01-01T23:59:59.000Z

160

Innovative Thin Films LLC | Open Energy Information  

Open Energy Info (EERE)

Thin Films LLC Thin Films LLC Jump to: navigation, search Name Innovative Thin Films LLC Place Toledo, Ohio Zip 43607 Product Provider of altnernative energy thin film deposition technology. Coordinates 46.440613°, -122.847838° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":46.440613,"lon":-122.847838,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Solid State Thin Film Lithium Microbatteries  

E-Print Network (OSTI)

Solid state thin film lithium microbatteries fabricated by pulsed-laser deposition (PLD) are suggested. During deposition the following process parameters must be considered, which are laser energy and fluence, laser pulse ...

Shi, Z.

162

Superhydrophobic Thin Film Symposium | ornl.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

Connect with ORNL | For Industry | Partnerships | Events and Conferences Superhydrophobic Thin Film Symposium Sep 05 2012 12:00 AM - 05:00 PM Hosted by Oak Ridge Laboratory's...

163

Polycrystalline Thin-Film Multijunction Solar Cells  

DOE Green Energy (OSTI)

We present a digest of our research on the thin-film material components that comprise the top and bottom cells of three different material systems and the tandem devices constructed from them.

Noufi, R.; Wu, X.; Abu-Shama, J.; Ramanathan, K; Dhere, R.; Zhou, J.; Coutts, T.; Contreras, M.; Gessert, T.; Ward, J. S.

2005-11-01T23:59:59.000Z

164

Thin films for geothermal sensing: Final report  

DOE Green Energy (OSTI)

The report discusses progress in three components of the geothermal measurement problem: (1) developing appropriate chemically sensitive thin films; (2) discovering suitably rugged and effective encapsulation schemes; and (3) conducting high temperature, in-situ electrochemical measurements. (ACR)

Not Available

1987-09-01T23:59:59.000Z

165

Rolling Ribbons  

E-Print Network (OSTI)

We present the results of a combined experimental and theoretical investigation of rolling elastic ribbons. Particular attention is given to characterizing the steady shapes that arise in static and dynamic rolling ...

Bush, John W. M.

166

Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films  

DOE Patents (OSTI)

A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

Brinker, Charles Jeffrey (Albuquerque, NM); Prakash, Sai Sivasankaran (Minneapolis, MN)

1999-01-01T23:59:59.000Z

167

The effect of hydrogen-plasma and PECVD-nitride deposition on bulk and surface passivation in string-ribbon silicon solar cells  

DOE Green Energy (OSTI)

We have investigated whether an in-situ hydrogen or ammonia rf-plasma treatment prior to a PECVD-nitride deposition would promote bulk defect passivation independently of surface effects. We also studied whether the predeposition of a thin silicon-nitride protective layer vbefore performing the plasma treatment would serve to minimize surface damage. We found that for the limited set of deposition conditions in of cells processed using the used five different deposition strategies and compared the resulting cell performance with that investigated so far, the direct deposition of PECVD-nitride produces the best cells on String Ribbon silicon wafers to date, with efficiencies up to 14.5%. Hydrogen and ammonia plasma pretreatments without a protective nitride layer resulted in better bulk passivation, but damaged surfaces. Pretreatments after deposition of the protective layer produced the best surface passivation, but were not effective in passivating the bulk.

Ruby, D.S. [Sandia National Labs., Albuquerque, NM (United States); Wilbanks, W.L.; Fleddermann, C.B. [New Mexico Univ., Albuquerque, NM (United States); Hanoka, J.I. [Evergreen Solar Inc., Waltham, MA (United States)

1995-12-01T23:59:59.000Z

168

Thin film absorber for a solar collector  

SciTech Connect

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, William G. (Cutchogue, NY)

1985-01-01T23:59:59.000Z

169

Thin film transistors on plastic substrates with reflective coatings for radiation protection  

DOE Patents (OSTI)

Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be used in large area low cost electronics, such as flat panel displays and portable electronics such as video cameras, personal digital assistants, and cell phones.

Wolfe, Jesse D. (Fairfield, CA); Theiss, Steven D. (Woodbury, MN); Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Wickbold, Paul (Walnut Creek, CA)

2006-09-26T23:59:59.000Z

170

Superhydrophobic Thin Film Symposium | ornl.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

Superhydrophobic Thin Film Symposium Superhydrophobic Thin Film Symposium Sep 05 2012 12:00 AM - 05:00 PM Hosted by Oak Ridge Laboratory's Partnerships Directorate and focusing on the recent LDRD Launch project work completed by Dr. Tolga Aytug and Dr. John T. Simpson (ORNL research PI's). Oak Ridge, TN Oak Ridge National Laboratory CONTACT : Email: Cassie Lopez Phone:(865) 576-9294 Add to Calendar SHARE Hosted by Oak Ridge Laboratory's Partnerships Directorate and focusing on the recent LDRD Launch project work completed by Dr. Tolga Aytug and Dr. John T. Simpson (ORNL research PI's). Purpose To share the ORNL Superhydrophonbic Thin Film technology to prospective commercial partners. Date and Time The conference will be held on the morning of Wednesday September 5th at Oak Ridge National Laboratory (ORNL) by Partnerships and Technology

171

Method for synthesizing thin film electrodes  

SciTech Connect

A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

Boyle, Timothy J. (Albuquerque, NM)

2007-03-13T23:59:59.000Z

172

Thin-film rechargeable lithium batteries  

SciTech Connect

Small thin-film rechargeable cells have been fabricated with a lithium phosphorus oxyniuide electrolyte, Li metal anode, and Li{sub 1-x}Mn{sub 2}O{sub 4} as the cathode film. The cathode films were fabricated by several different techniques resulting in both crystalline and amorphous films. These were compared by observing the cell discharge behavior. Estimates have been made for the scale-up of such a thin-film battery to meet the specifications for the electric vehicle application. The specific energy, energy density, and cycle life are expected to meet the USABC mid-term criteria. However, the areas of the thin-films needed to fabricate such a cell are very large. The required areas could be greatly reduced by operating the battery at temperatures near 100{degrees}C or by enhancing the lithium ion transport rate in the cathode material.

Dudney, N.J.; Bates, J.B.; Lubben, D.

1994-11-01T23:59:59.000Z

173

Mesoscale morphologies in polymer thin films.  

Science Conference Proceedings (OSTI)

In the midst of an exciting era of polymer nanoscience, where the development of materials and understanding of properties at the nanoscale remain a major R&D endeavor, there are several exciting phenomena that have been reported at the mesoscale (approximately an order of magnitude larger than the nanoscale). In this review article, we focus on mesoscale morphologies in polymer thin films from the viewpoint of origination of structure formation, structure development and the interaction forces that govern these morphologies. Mesoscale morphologies, including dendrites, holes, spherulites, fractals and honeycomb structures have been observed in thin films of homopolymer, copolymer, blends and composites. Following a largely phenomenological level of description, we review the kinetic and thermodynamic aspects of mesostructure formation outlining some of the key mechanisms at play. We also discuss various strategies to direct, limit, or inhibit the appearance of mesostructures in polymer thin films as well as an outlook toward potential areas of growth in this field of research.

Ramanathan, M.; Darling, S. B. (Center for Nanoscale Materials)

2011-06-01T23:59:59.000Z

174

Solution of thin film magnetization problems in type-II superconductivity  

Science Conference Proceedings (OSTI)

Keywords: critical current, numerical solution, superconductivity, thin film, variational inequality

Leonid Prigozhin

1998-07-01T23:59:59.000Z

175

Thin-film Rechargeable Lithium Batteries  

DOE R&D Accomplishments (OSTI)

Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

Dudney, N. J.; Bates, J. B.; Lubben, D.

1995-06-00T23:59:59.000Z

176

Thin-film rechargeable lithium batteries  

SciTech Connect

Thin-film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin-film battery.

Dudney, N.J.; Bates, J.B.; Lubben, D. [Oak Ridge National Lab., TN (United States). Solid State Div.

1995-06-01T23:59:59.000Z

177

Nanostructured Inorganic Thin Film Enabled Fiber Optic Sensors for ...  

Science Conference Proceedings (OSTI)

... Thin Film Enabled Fiber Optic Sensors for Gas Sensing in Energy and Environmental Systems ... Co-Doped TiO2 Nanoparticles and Thin Films for Enhanced Solar Energy Utilization ... Synthesis of Magnetic Core-TS-1 Zeolite Shell Catalyst.

178

SAW determination of surface area of thin films  

DOE Patents (OSTI)

N.sub.2 adsorption isotherms are measured from thin films on SAW devices. The isotherms may be used to determine the surface area and pore size distribution of thin films.

Frye, Gregory C. (Albuquerque, NM); Martin, Stephen J. (Albuquerque, NM); Ricco, Antonio J. (Albuquerque, NM)

1990-01-01T23:59:59.000Z

179

Using in Situ Thin Film Stress Measurements to Understand ...  

Science Conference Proceedings (OSTI)

Symposium, Nanostructured Materials for Lithium Ion Batteries and for Supercapacitors. Presentation Title, Using in Situ Thin Film Stress Measurements to ...

180

Synthesis and Characterization of Plasma Polymerized Thin Films ...  

Science Conference Proceedings (OSTI)

Presentation Title, Synthesis and Characterization of Plasma Polymerized Thin Films Deposited from Benzene and Hexamethyldisiloxane Using (PECVD) ...

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Fracture and Delamination in Thin Film Si Electrodes  

Science Conference Proceedings (OSTI)

Symposium, Nanostructured Materials for Lithium Ion Batteries and for Supercapacitors. Presentation Title, Fracture and Delamination in Thin Film Si Electrodes.

182

Magnetic properties of TM/RE bilayer thin films  

Science Conference Proceedings (OSTI)

... Magnetic properties of TM/RE bilayer thin films. I. Zoto University of Alabama. The magnetic recording technology badly ...

183

Graphene nano-ribbon waveguides  

E-Print Network (OSTI)

Graphene as a one-atom-thick platform for infrared metamaterial plays an important role in optical science and engineering. Here we study the unique properties of some plasmonic waveguides based on graphene nano-ribbon. It is found that a graphene ribbon of finite width leads to the occurrence of coupled edge mode. The single-mode region of a single freestanding graphene ribbon is identified at a fixed frequency of 30 THz. A low-loss waveguide structure, consisting of a graphene layer, a silica buffer layer and silicon substrate is proposed to reduce the propagation loss and obtain a high figure of merit for future integration of waveguide devices. Furthermore, two coupled ribbon configurations, namely, side-side coupling and top-bottom coupling, are investigated. As a device example, a nano-ring cavity of ultra-small size is designed.

He, S; He, Y

2013-01-01T23:59:59.000Z

184

Transparent Conductors and Barrier Layers for Thin Film Solar Cells:  

DOE Green Energy (OSTI)

This report describes the research undertaken to increase the efficiency of thin-film solar cells based on amorphous silicon in the so-called''superstrate structure'' (glass front surface/transparent electrically conductive oxide (TCO)/pin amorphous silicon/metal back electrode). The TCO layer must meet many requirements: high optical transparency in the wavelength region from about 350 to 900 nm, low electrical sheet resistance, stability during handling and deposition of the subsequent layers and during use, a textured (rough) surface to enhance optical absorption of red and near-infrared light, and low-resistance electrical contact to the amorphous silicon p-layer. Fluorine-doped tin oxide has been the TCO used in most commercial superstrate amorphous silicon cells. Fluorine-doped zinc oxide (ZnO:F) was later shown to be even more transparent than fluorine-doped tin oxide, as well as being more resistant to the strongly reducing conditions encountered during the deposition of amorphous silicon. Solar cells based on ZnO:F showed the expected higher currents, but the fill factors were lower than standard cells grown on tin oxide, resulting in no consistent improvement in efficiency. This problem was recently mitigated by using a new proprietary p/buffer layer combination developed at BP Solar.

Gordon, R. G.; Broomhall-Dillard, R.; Liu, X.; Pang, D.; Barton, J.

2001-12-01T23:59:59.000Z

185

Growth study of ion assisted evaporated molybdenum thin films  

Science Conference Proceedings (OSTI)

We reported optimization of ion-to-atom ratios and ion energy for growth of molybdenum thin film on oxidized silicon substrate using ion assisted electron beam evaporation system. The ion-to-atom ratio is varied by independently adjusting the ion current density and deposition rate. The structural characterization of the films is carried out by hard X-ray reflectivity. We observed improvement in film density from 85.5% to 98.2% and film roughness from {approx}2 nm to 0.84nm on {approx}26 nm thick Mo film by optimizing ion parameters. The observed results are discussed considering the effect of kinetic of adatoms during growth of film.

Yadav, P. K.; Nayak, M.; Lodha, G. S.; Rai, S. [X-ray Optics Section, Indus Synchrotrons Utilization Division, Raja Ramanna Centre For Advanced Technology, Indore-452013 (India)

2012-06-25T23:59:59.000Z

186

Available Technologies: Thinner Film Silicon Solar Cells  

Berkeley Lab scientists have designed a new approach to create highly efficient thin film silicon solar cells. This technology promises to lower solar cell material ...

187

CAT-CVD process and its application to preparation of Si-based thin films  

SciTech Connect

This is to review the present understanding on Cat-CVD (catalytic chemical vapor deposition) or hot wire CVD. Firstly, the deposition mechanism in Cat-CVD process is briefly mentioned along with key issues such as the effect of heat radiation and a method to avoid contamination from the catalyzer. Secondly, the properties of Cat-CVD Si-based thin films such as amorphous silicon (a-Si), polycrystalline silicon (poly-Si) and silicon nitride (SiN{sub x}) films are demonstrated, and finally, the feasibility of such films for industrial application is discussed.

Matsumura, Hideki; Masuda, Atsushi; Izumi, Akira

1999-07-01T23:59:59.000Z

188

Nanocrystalline Silicon Quantum Dot Light Emitting Diodes Using Metal Oxide Charge Transport Layers.  

E-Print Network (OSTI)

??Silicon-based lighting show promise for display and solid state lighting use. Here we demonstrate a novel thin film light emitting diode device using nanocrystalline silicon… (more)

Zhu, Jiayuan

2013-01-01T23:59:59.000Z

189

Polycrystalline thin films FY 1992 project report  

DOE Green Energy (OSTI)

This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting next-generation'' options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called government/industry partnerships'') that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

Zweibel, K. (ed.)

1993-01-01T23:59:59.000Z

190

Polycrystalline thin films FY 1992 project report  

DOE Green Energy (OSTI)

This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

Zweibel, K. [ed.

1993-01-01T23:59:59.000Z

191

Thin film photovoltaic panel and method  

DOE Patents (OSTI)

A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

Ackerman, Bruce (El Paso, TX); Albright, Scot P. (El Paso, TX); Jordan, John F. (El Paso, TX)

1991-06-11T23:59:59.000Z

192

Electrostatic thin film chemical and biological sensor  

DOE Patents (OSTI)

A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

Prelas, Mark A. (Columbia, MO); Ghosh, Tushar K. (Columbia, MO); Tompson, Jr., Robert V. (Columbia, MO); Viswanath, Dabir (Columbia, MO); Loyalka, Sudarshan K. (Columbia, MO)

2010-01-19T23:59:59.000Z

193

Rechargeable thin-film lithium batteries  

SciTech Connect

Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6-{mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin-film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin-film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin-film lithium batteries.

Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, Xiaohua

1993-08-01T23:59:59.000Z

194

Superconducting thin films on potassium tantalate substrates  

DOE Patents (OSTI)

A superconductive system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

Feenstra, Roeland (Oak Ridge, TN); Boatner, Lynn A. (Oak Ridge, TN)

1992-01-01T23:59:59.000Z

195

Packaging material for thin film lithium batteries  

SciTech Connect

A thin film battery including components which are capable of reacting upon exposure to air and water vapor incorporates a packaging system which provides a barrier against the penetration of air and water vapor. The packaging system includes a protective sheath overlying and coating the battery components and can be comprised of an overlayer including metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-metal-ceramic combination.

Bates, John B. (116 Baltimore Dr., Oak Ridge, TN 37830); Dudney, Nancy J. (11634 S. Monticello Rd., Knoxville, TN 37922); Weatherspoon, Kim A. (223 Wadsworth Pl., Oak Ridge, TN 37830)

1996-01-01T23:59:59.000Z

196

Annealed CVD molybdenum thin film surface  

DOE Patents (OSTI)

Molybdenum thin films deposited by pyrolytic decomposition of Mo(CO).sub.6 attain, after anneal in a reducing atmosphere at temperatures greater than 700.degree. C., infrared reflectance values greater than reflectance of supersmooth bulk molybdenum. Black molybdenum films deposited under oxidizing conditions and annealed, when covered with an anti-reflecting coating, approach the ideal solar collector characteristic of visible light absorber and infrared energy reflector.

Carver, Gary E. (Tucson, AZ); Seraphin, Bernhard O. (Tucson, AZ)

1984-01-01T23:59:59.000Z

197

Thin Film Solid Oxide Fuel Cells  

Science Conference Proceedings (OSTI)

A novel solid oxide fuel cell (SOFC) design that can be fabricated entirely using low-temperature, thin-film processing is described. Potential advantages of the cell are reduced materials costs and improved fuel-cell characteristics. The critical design feature is the use of thin (approximately equal to 50 nanometers), catalytically-active oxide layers on a < 10 micrometer thick yttria-stabilized zirconia (YSZ) supported electrolyte to minimize reaction overpotentials and ohmic losses. Doped ceria at th...

1995-03-29T23:59:59.000Z

198

Polycrystalline thin film materials and devices  

DOE Green Energy (OSTI)

Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. (Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion)

1992-10-01T23:59:59.000Z

199

Anisotropic dewetting in ultra-thin single-crystal silicon-on-insulator films  

E-Print Network (OSTI)

The single crystal silicon-on-insulator thin film materials system represents both an ideal model system for the study of anisotropic thin film dewetting as well as a technologically important system for the development ...

Danielson, David T. (David Thomas)

2008-01-01T23:59:59.000Z

200

MIS solar cells on thin polycrystalline silicon. Progress report No. 3, September 1-November 30, 1980  

DOE Green Energy (OSTI)

The first task of this project involves electron-beam deposition of thin silicon films on low cost substrates. The goal is to obtain 20 ..mu..m thick films having 20 ..mu..m diameter crystallites which may be recrystallized to > 40 ..mu..m. Material characterization and device studies are to be included in efforts to reach a 6% conversion efficiency. The second task deals with MIS solar cell fabrication on various types of silicon including poly-Si, ribbon-Si, silicon on ceramic, and thin film silicon. Conduction mechanism studies, optimum engineering design, and modification of the fabrication process are to be used to achieve 13% efficiency on Xtal-Si and 11% efficiency on poly-Si. The third task involves more detailed test procedures and includes spectral response, interface and grain boundary effects, computer analysis, materials studies, and grain boundary passivation. Progress is detailed. (WHK)

Anderson, W.A.

1980-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
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201

Fabrication Of Multilayered Thin Films Via Spin-Assembly  

NLE Websites -- All DOE Office Websites (Extended Search)

Fabrication Of Multilayered Thin Films Via Spin-Assembly Fabrication Of Multilayered Thin Films Via Spin-Assembly Fabrication Of Multilayered Thin Films Via Spin-Assembly A process of forming multilayer thin film heterostructures. Available for thumbnail of Feynman Center (505) 665-9090 Email Fabrication Of Multilayered Thin Films Via Spin-Assembly A process of forming multilayer thin film heterostructures is disclosed and includes applying a solution including a first water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species onto a substrate to form a first coating layer on the substrate, drying the first coating layer on the substrate, applying a solution including a second water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species

202

Evaluation of Thin-film Interfacial Properties Using Indentation Test  

Science Conference Proceedings (OSTI)

A thin film's reliable question is depend on interfacial characterization, so evaluating interfacial characterization is the most important things in this test. So far ...

203

Ferroelectric Thin Film Capacitors to Enable a Miniaturized Smart L ...  

Science Conference Proceedings (OSTI)

The effects ultra-violet (UV)-assisted processing and compositional grading of BST capacitor thin films will be presented and the material property trade-offs for  ...

204

Single-Crystalline Thin Film Used in Photovoltaics  

Energy.gov (U.S. Department of Energy (DOE))

Single-crystalline thin films are made from gallium arsenide (GaAs), a compound semiconductor that is a mixture of gallium and arsenic.

205

Thin film techniques for solid oxide fuel cells  

Thin film techniques for solid oxide fuel cells V.E.J. van Dieten and J. Schoonman Laboratory ... ticles stay in the hot temperature region can be ...

206

Heteroepitaxial Si Thin Films Deposited on Flexible Copper ...  

Science Conference Proceedings (OSTI)

Presentation Title, Heteroepitaxial Si Thin Films Deposited on Flexible Copper Substrates for Solar Photovoltaics. Author(s), Daniela Florentina Bogorin, Lee ...

207

Electron Beam Evaporator Systems for Thin Film Deposition  

Science Conference Proceedings (OSTI)

The Thin Film and Nanostructure Processing Group has two high-vacuum, electron beam evaporator systems for fabrication of single and multilayer ...

2012-10-23T23:59:59.000Z

208

Layer-by-Layer Assembled Thin Films for Battery Electrolytes  

Science Conference Proceedings (OSTI)

Presentation Title, Layer-by-Layer Assembled Thin Films for Battery Electrolytes ... Abstract Scope, Exponential layer-by-layer (eLBL) assembled battery ...

209

Tungsten-doped thin film materials - Energy Innovation Portal  

A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a ...

210

Thin-Film Ferroelectric Materials for Decoupling and Tunable ...  

Science Conference Proceedings (OSTI)

Symposium, ACerS Richard M. Fulrath Award Symposium. Presentation Title, Thin-Film Ferroelectric Materials for Decoupling and Tunable Capacitors. Author( s) ...

211

Development of Polyimide/SMA Thin-Film Actuator  

Science Conference Proceedings (OSTI)

Symposium, Symposium I: Biomaterials, Smart Materials and Structures. Presentation Title, Development of Polyimide/SMA Thin-Film Actuator. Author(s), Akira ...

212

Integrated Technology of Decoupling BST Thin Film Capacitors  

Science Conference Proceedings (OSTI)

Jun 16, 2007 ... The integration technology of decoupling capacitors, which contain multi-layered Cu wiring and Barium Strontium Titanate (BST) thin film ...

213

How Thin Film Processing Can Contribute to Understanding the ...  

Science Conference Proceedings (OSTI)

Presentation Title, How Thin Film Processing Can Contribute to Understanding the Materials Science of the MAX Phases. Author(s), Per Eklund, Ulf Jansson, ...

214

Fabrication of Solid Oxide Fuel Cells via Thin Film Techniques  

Science Conference Proceedings (OSTI)

We decided to use thin film techniques to solve this problem. Among various methods of lowering the operation temperature for SOFCs, adopting bi-layer ...

215

Lessons Learned in Sputtering TiNi Thin Film  

Science Conference Proceedings (OSTI)

Experimental results have been published in journals and conference proceedings, but as yet TiNi thin film is not commercially available. The author and ...

216

AMORPHOUS THIN FILMS CONSISTING OF TERNARY MgZnCa ...  

Science Conference Proceedings (OSTI)

Jul 20, 2012 ... AMORPHOUS THIN FILMS CONSISTING OF TERNARY MgZnCa-ALLOYS by K. Schlüter, C. Zamponi, U. Schürmann, N. Hort, L. Kienle, K.U. ...

217

Chemistry Chemical Analysis Thin-Films Information at NIST  

Science Conference Proceedings (OSTI)

... Method Can Affect the Use of Block Copolymer Thin Films (10/18 ... NIST Scientists Address 'Wrinkles' in Transparent Film Development (10/02/2012). ...

2010-09-24T23:59:59.000Z

218

NIST Testing Method Quickly Tells Whether Thin Films Are ...  

Science Conference Proceedings (OSTI)

... and emerging technology areas that rely on thin-film advances for ... For films less than 1 micrometer thick, mechanical-property measurements made ...

2013-01-03T23:59:59.000Z

219

Interface Adhesion and Coating Integrity of the Thin Film Au ...  

Science Conference Proceedings (OSTI)

Current scientific emphasis is on process development and optimization of thin film Au-interconnect metallization for the Bi2Te3-based TE module used for the ...

220

Development of Thin-Film Materials Technology for Energy Applications...  

NLE Websites -- All DOE Office Websites (Extended Search)

Development of Thin-Film Materials Technology for Energy Applications: High Temperature Superconductors, etc. Speaker(s): Ronald Reade Date: January 15, 2002 - 12:00pm Location:...

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


221

Bi-based Piezoelectric Thin Films via Chemical Solution Deposition  

Science Conference Proceedings (OSTI)

BNT-BKT-BMgT thin films showed very promising piezoelectric response with ... Chemical Quantification of Oxide Interfaces Using Energy-dispersive X-ray ...

222

Thermoelectric effect in very thin film Pt/Au thermocouples  

E-Print Network (OSTI)

thin films, the electrical resistivity ratio ? F /? B is BStudies of the electrical resistivity of metallic films [23,calculate the electrical resistivity and the thermoelectric

Salvadori, M.C.; Vaz, A.R.; Teixeira, F.S.; Cattani, M.; Brown, I.G.

2006-01-01T23:59:59.000Z

223

Articles including thin film monolayers and multilayers  

DOE Patents (OSTI)

This invention pertains to thin film assemblies or devices useful as sensors, nonlinear optical materials, and trace material scavengers. It claims a base substrate having an oxide surface layer, and a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate. A metal species may be provided attached to the ligand, and a multifunctional organic ligand may be provided attached to the metal species. A second metal species may be provided attached to the multifunctional ligand.

Li, DeQuan; Swanson, B.I.

1992-12-31T23:59:59.000Z

224

Thin-film rechargeable lithium batteries  

SciTech Connect

Rechargeable thin-films batteries with lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. The cathodes include TiS{sub 2}, the {omega} phase of V{sub 2}O{sub 5}, and the cubic spinel Li{sub x}Mn{sub 2}O{sub 4} with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The development of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25 C of 2 {mu}S/cm. Thin-film cells have been cycled at 100% depth of discharge using current densities of 2 to 100 {mu}A/cm{sup 2}. The polarization resistance of the cells is due to the slow insertion rate of Li{sup +} ions into the cathode. Chemical diffusion coefficients for Li{sup +} ions in the three types of cathodes have been estimated from the analysis of ac impedance measurements.

Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

1993-11-01T23:59:59.000Z

225

Rechargeable thin-film lithium batteries  

Science Conference Proceedings (OSTI)

Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

1993-09-01T23:59:59.000Z

226

Spin hall effect in paramagnetic thin films  

E-Print Network (OSTI)

Spintronics, an abbreviation of spin based electronics and also known as magneto electronics, has attracted a lot of interest in recent years. It aims to explore the role of electrons’ spins in building next generation electric devices. Using electrons’ spins rather than electrons’ charges may allow faster, lower energy cost devices. Spin Hall Effect is an important subfield of spintronics. It studies spin current, spin transport, and spin accumulation in paramagnetic systems. It can further understanding of quantum physics, device physics, and may also provide insights for spin injection, spin detection and spin manipulation in the design of the next generation spintronics devices. In this experimental work, two sets of experiments were prepared to detect the Spin Hall Effect in metallic systems. The first set of experiments aims to extract Spin Hall Effect from Double Hall Effect in micrometer size metal thin film patterns. Our experiments proved that the Spin Hall Effect signal was much smaller than the theoretically calculated value due to higher electrical resistivity in evaporated thin films. The second set of experiments employs a multi-step process. It combines micro fabrication and electrochemical method to fabricate a perpendicular ferromagnet rod as a spin injector. Process description and various techniques to improve the measurement sensitivity are presented. Measurement results in aluminum, gold and copper are presented in Chapters III, IV and V. Some new experiments are suggested in Chapters V and VI.

Xu, Huachun

2008-12-01T23:59:59.000Z

227

Apparatus for laser assisted thin film deposition  

DOE Patents (OSTI)

A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

Warner, Bruce E. (Pleasanton, CA); McLean, II, William (Oakland, CA)

1996-01-01T23:59:59.000Z

228

Thin-film Rechargeable Lithium Batteries  

DOE R&D Accomplishments (OSTI)

Rechargeable thin films batteries with lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. The cathodes include TiS{sub 2}, the {omega} phase of V{sub 2}O{sub 5}, and the cubic spinel Li{sub x}Mn{sub 2}O{sub 4} with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The development of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25 C of 2 {mu}S/cm. Thin film cells have been cycled at 100% depth of discharge using current densities of 2 to 100 {mu}A/cm{sup 2}. The polarization resistance of the cells is due to the slow insertion rate of Li{sup +} ions into the cathode. Chemical diffusion coefficients for Li{sup +} ions in the three types of cathodes have been estimated from the analysis of ac impedance measurements.

Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, X.

1993-11-00T23:59:59.000Z

229

Active superconducting devices formed of thin films  

DOE Patents (OSTI)

Active superconducting devices are formed of thin films of superconductor which include a main conduction channel which has an active weak link region. The weak link region is composed of an array of links of thin film superconductor spaced from one another by voids and selected in size and thickness such that magnetic flux can propagate across the weak link region when it is superconducting. Magnetic flux applied to the weak link region will propagate across the array of links causing localized loss of superconductivity in the links and changing the effective resistance across the links. The magnetic flux can be applied from a control line formed of a superconducting film deposited coplanar with the main conduction channel and weak link region on a substrate. The devices can be formed of any type to superconductor but are particularly well suited to the high temperature superconductors since the devices can be entirely formed from coplanar films with no overlying regions. The devices can be utilized for a variety of electrical components, including switching circuits, amplifiers, oscillators and modulators, and are well suited to microwave frequency applications.

Martens, Jon S. (Madison, WI); Beyer, James B. (Madison, WI); Nordman, James E. (Madison, WI); Hohenwarter, Gert K. G. (Madison, WI)

1991-05-28T23:59:59.000Z

230

Thin film cadmium telluride photovoltaic cells  

DOE Green Energy (OSTI)

This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

Compaan, A.; Bohn, R. (Toledo Univ., OH (United States))

1992-04-01T23:59:59.000Z

231

Thinner Film Silicon Solar Cells - Energy Innovation Portal  

Technology Marketing Summary Berkeley Lab scientists have designed a new approach to create thin film silicon solar cells with a potential increase in ...

232

Thermal Sensor Arrays for The Combinatorial Analysis of Thin Films  

E-Print Network (OSTI)

Thermal Sensor Arrays for The Combinatorial Analysis of Thin Films A dissertation presented Advisor Author Joost J. Vlassak Patrick J. McCluskey Thermal Sensor Arrays for The Combinatorial Analysis analysis of the thermophysical properties of thin films. The continuous growth of integrated circuits

233

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors  

Science Conference Proceedings (OSTI)

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (?-HfIZO) thin film transistors (TFTs). Co-sputtering-processed ?-HfIZO thin films have shown an amorphous phase in nature. ...

Sheng-Po Chang; San-Syong Shih

2012-01-01T23:59:59.000Z

234

Long-laser-pulse method of producing thin films  

DOE Patents (OSTI)

The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California. This invention relates in general to techniques for producing thin films, and in particular to a method of using pulsed laser to deposit high temperature supercoducting thin films. 5 figs.

Balooch, M.; Olander, D.R.; Russo, R.E.

1990-02-20T23:59:59.000Z

235

Organic thin film transistors with double insulator layers  

Science Conference Proceedings (OSTI)

We have investigated a double-layer structured gate dielectric for the organic thin films transistor (OTFT) with the purpose of improving the performance of the SiO"2 gate insulator. A 50nm PMMA layer was coated on top of the SiO"2 gate insulator as ... Keywords: Mobility, On/off ratio, Organic thin film transistor, PMMA

X. Liu; Y. Bai; L. Chen; F. X. Wei; X. B. Zhang; X. Y. Jiang; Zh. L. Zhang

2007-08-01T23:59:59.000Z

236

Ultrafast thin-film laser-induced breakdown spectroscopy of doped...  

NLE Websites -- All DOE Office Websites (Extended Search)

Ultrafast thin-film laser-induced breakdown spectroscopy of doped oxides Title Ultrafast thin-film laser-induced breakdown spectroscopy of doped oxides Publication Type Journal...

237

A Hyper-Elastic Thin Film Nitinol Flow Diverter for Brain Aneurysms  

Science Conference Proceedings (OSTI)

The thin film Nitinol is sputter deposited with transformation temperatures at or near body temperature (37C). The thin film Nitinol is micromachined using a lift off ...

238

Study program to develop and evaluate die and container materials for the growth of silicon ribbons. Quarterly report No. 5  

DOE Green Energy (OSTI)

Die and container material development efforts under the current program are shared among three organizations: Miami Research Laboratories (MRL) - ceramic process development and overall program management; University of missouri-Rolla (UMR) - silicon sessile drop studies with characterization of reaction products and emphasis on atmospheric effects; and Chemetal Corporation, Pacoima, California - special coatings to be applied to test coupons, die shapes, and containers provided by MRL and tested/characterized by UMR. The completion of a major hardware delivery milestone was accomplished with the delivery of three CNTD Si/sub 3/N/sub 4/ coated hot pressed Si/sub 3/N/sub 4/ crucibles to JPL. A limited characterization of the coating was performed at MRL prior to delivery. The coatings were fine grained ..cap alpha.. - Si/sub 3/N/sub 4/. It has been determined that a two piece die design will be required. At UMR the importance of the role of oxygen in influencing the attack of the CNTD materials by molten silicon has been demonstrated. The stability is greatly enhanced by maintaining the oxygen partial pressure near or below the Si + O/sub 2/ = SiO/sub 2/ equilibrium.

Ownby, P.D.; Yu, B.B.; Barsoum, M.W.

1979-01-01T23:59:59.000Z

239

Post-buckling analysis for the precisely controlled buckling of thin film encapsulated by elastomeric subsrates.  

SciTech Connect

The precisely controlled buckling of stiff thin films (e.g., Si or GaAs nano ribbons) on the patterned surface of elastomeric substrate (e.g., poly(dimethylsiloxane) (PDMS)) with periodic inactivated and activated regions was designed by Sun et al. [Sun, Y., Choi, W.M., Jiang, H., Huang, Y.Y., Rogers, J.A., 2006. Controlled buckling of semiconductor nanoribbons for stretchable electronics. Nature Nanotechnology 1, 201-207] for important applications of stretchable electronics. We have developed a post-buckling model based on the energy method for the precisely controlled buckling to study the system stretchability. The results agree with Sun et al.'s (2006) experiments without any parameter fitting, and the system can reach 120% stretchability.

Jiang, H.; Sun, Y.; Rogers, J. A.; Huang, Y.; Arizona State Univ.; Univ. of Illinois; Northwestern Univ.

2008-04-01T23:59:59.000Z

240

Low Cost Thin Film Building-Integrated Photovoltaic Systems  

DOE Green Energy (OSTI)

The goal of the program is to develop 'LOW COST THIN FILM BUILDING-INTEGRATED PV SYSTEMS'. Major focus was on developing low cost solution for the commercial BIPV and rooftop PV market and meet DOE LCOE goal for the commercial market segment of 9-12 cents/kWh for 2010 and 6-8 cents/kWh for 2015. We achieved the 2010 goal and were on track to achieve the 2015 goal. The program consists of five major tasks: (1) modules; (2) inverters and BOS; (3) systems engineering and integration; (4) deployment; and (5) project management and TPP collaborative activities. We successfully crossed all stage gates and surpassed all milestones. We proudly achieved world record stable efficiencies in small area cells (12.56% for 1cm2) and large area encapsulated modules (11.3% for 800 cm2) using a triple-junction amorphous silicon/nanocrystalline silicon/nanocrystalline silicon structure, confirmed by the National Renewable Energy Laboratory. We collaborated with two inverter companies, Solectria and PV Powered, and significantly reduced inverter cost. We collaborated with three universities (Syracuse University, University of Oregon, and Colorado School of Mines) and National Renewable Energy Laboratory, and improved understanding on nanocrystalline material properties and light trapping techniques. We jointly published 50 technical papers in peer-reviewed journals and International Conference Proceedings. We installed two 75kW roof-top systems, one in Florida and another in New Jersey demonstrating innovative designs. The systems performed satisfactorily meeting/exceeding estimated kWh/kW performance. The 50/50 cost shared program was a great success and received excellent comments from DOE Manager and Technical Monitor in the Final Review.

Dr. Subhendu Guha; Dr. Jeff Yang

2012-05-25T23:59:59.000Z

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Characterization of lithium phosphorous oxynitride thin films  

DOE Green Energy (OSTI)

Electrical and electrochemical properties of an amorphous thin-film lithium electrolyte, lithium phosphorous oxynitride (Lipon), have been studied with emphasis on the stability window vs Li metal and the behavior of the Li/Lipon interface. Ion conductivity of Lipon exhibits Arrhenius behavior at {minus}26 to +140 C, with a conductivity of 1.7 {times} 10{sup {minus}6}S/cm at 25 C and an activity energy of 0.50 {plus_minus} 0.01 eV. A stability window of 5.5 V was observed with respect to a Li{sup +}/Li reference, and no detectable reaction or degradation was evident at the Li/Lipon interface upon lithium cycling.

Yu, Xiaohua; Bates, J.B.; Jellison, G.E. Jr.

1996-01-01T23:59:59.000Z

242

Thin Film Femtosecond Laser Damage Competition  

SciTech Connect

In order to determine the current status of thin film laser resistance within the private, academic, and government sectors, a damage competition was started at the 2008 Boulder Damage Symposium. This damage competition allows a direct comparison of the current state of the art of high laser resistance coatings since they are tested using the same damage test setup and the same protocol. In 2009 a high reflector coating was selected at a wavelength of 786 nm at normal incidence at a pulse length of 180 femtoseconds. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials and layer count, and spectral results will also be shared.

Stolz, C J; Ristau, D; Turowski, M; Blaschke, H

2009-11-14T23:59:59.000Z

243

Thin films of mixed metal compounds  

DOE Patents (OSTI)

Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

Mickelsen, R.A.; Chen, W.S.

1985-06-11T23:59:59.000Z

244

Thin-film forces in pseudoemulsion films  

SciTech Connect

Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

Bergeron, V.; Radke, C.J. [California Univ., Berkeley, CA (United States). Dept. of Chemical Engineering]|[Lawrence Berkeley Lab., CA (United States)

1991-06-01T23:59:59.000Z

245

Rechargeable thin-film electrochemical generator  

DOE Patents (OSTI)

An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

Rouillard, Roger (Beloeil, CA); Domroese, Michael K. (South St. Paul, MN); Hoffman, Joseph A. (Minneapolis, MN); Lindeman, David D. (Hudson, WI); Noel, Joseph-Robert-Gaetan (St-Hubert, CA); Radewald, Vern E. (Austin, TX); Ranger, Michel (Lachine, CA); Sudano, Anthony (Laval, CA); Trice, Jennifer L. (Eagan, MN); Turgeon, Thomas A. (Fridley, MN)

2000-09-15T23:59:59.000Z

246

Titanium nitride thin films for minimizing multipactoring  

DOE Patents (OSTI)

Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.

Welch, Kimo M. (Mountain View, CA)

1979-01-01T23:59:59.000Z

247

Growth of TiO{sub 2} Thin Film on Various Substrates using RF Magnetron Sputtering  

Science Conference Proceedings (OSTI)

The conductivity of Titanium Dioxide (TiO{sub 2}) thin film fabricated using Radio Frequency (RF) Magnetron Sputtering on Silicon (Si), Indium doped--Tin Oxide (ITO) and microscope glass (M) substrates is presented in this paper. The dependant of thin film thickness and type of substrate been discussed. TiO{sub 2} was deposited using Ti target in Ar+O{sub 2}(45:10) mixture at 250 W for 45, 60, 75, 90, 105 and 120 minute. Resultant thickness varies from 295 nm to 724 nm with deposition rate 6.4 nm/min. On the other hand, resistivity, Rs value for ITO substrate is between 5.72x10{sup -7} to 1.54x10{sup -6{Omega}}.m, Si substrate range is between 3.52x10{sup -6} to 1.76x10{sup -5{Omega}}.m and M substrate range is between 99 to 332 {Omega}.m. The value of resistivity increases with the thickness of the thin film.

Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal [Microelectronic and Nanotechnology-Shamsuddin Research Center (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia (UTHM), 86400 Batu Pahat, Johor D.T. (Malaysia)

2011-03-30T23:59:59.000Z

248

Origin of stress in radio frequency magnetron sputtered zinc oxide thin films  

SciTech Connect

Highly c-axis oriented ZnO thin films have been deposited on silicon substrates by planar rf magnetron sputtering under varying pressure (10-50 mTorr) and oxygen percentage (50-100%) in the reactive gas (Ar + O{sub 2}) mixture. The as-grown films were found to be stressed over a wide range from -1 x 10{sup 11} to -2 x 10{sup 8} dyne/cm{sup 2} that in turn depends strongly on the processing conditions, and the film becomes stress free at a unique combination of sputtering pressure and reactive gas composition. Raman spectroscopy and photoluminescence (PL) analyses identified the origin of stress as lattice distortion due to defects introduced in the ZnO thin film. FTIR study reveals that Zn-O bond becomes stronger with the increase in oxygen fraction in the reactive gas mixture. The lattice distortion or stress depends on the type of defects introduced during deposition. PL spectra show the formation of a shoulder in band emission with an increase in the processing pressure and are related to the presence of stress. The ratio of band emission to defect emission decreases with the increase in oxygen percentage from 50 to 100%. The studies show a correlation of stress with the structural, vibrational, and photoluminescence properties of the ZnO thin film. The systematic study of the stress will help in the fabrication of efficient devices based on ZnO film.

Menon, Rashmi; Gupta, Vinay; Sreenivas, K. [Electronic Material and Devices Laboratory, Department of Physics and Astrophysics, University of Delhi, Delhi 11007 (India); Tan, H. H.; Jagadish, C. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

2011-03-15T23:59:59.000Z

249

Combinatorics of ribbon tableaux  

E-Print Network (OSTI)

This thesis begins with the study of a class of symmetric functions ... Which are generating functions for ribbon tableaux (hereon called ribbon functions), first defined by Lascoux, Leclerc and Thibon. Following work of ...

Lam, Thomas F. (Thomas Fun Yau)

2005-01-01T23:59:59.000Z

250

Thin films by metal-organic precursor plasma spray  

Science Conference Proceedings (OSTI)

While most plasma spray routes to coatings utilize solids as the precursor feedstock, metal-organic precursor plasma spray (MOPPS) is an area that the authors have investigated recently as a novel route to thin film materials. Very thin films are possible via MOPPS and the technology offers the possibility of forming graded structures by metering the liquid feed. The current work employs metal-organic compounds that are liquids at standard temperature-pressure conditions. In addition, these complexes contain chemical functionality that allows straightforward thermolytic transformation to targeted phases of interest. Toward that end, aluminum 3,5-heptanedionate (Al(hd){sub 3}), triethylsilane (HSi(C{sub 2}H{sub 5}){sub 3} or HSiEt{sub 3}), and titanium tetrakisdiethylamide (Ti(N(C{sub 2}H{sub 5}){sub 2}){sub 4} or Ti(NEt{sub 2}){sub 4}) were employed as precursors to aluminum oxide, silicon carbide, and titanium nitride, respectively. In all instances, the liquids contain metal-heteroatom bonds envisioned to provide atomic concentrations of the appropriate reagents at the film growth surface, thus promoting phase formation (e.g., Si-C bond in triethylsilane, Ti-N bond in titanium amide, etc.). Films were deposited using a Sulzer Metco TriplexPro-200 plasma spray system under various experimental conditions using design of experiment principles. Film compositions were analyzed by glazing incidence x-ray diffraction and elemental determination by x-ray spectroscopy. MOPPS films from HSiEt{sub 3} showed the formation of SiC phase but Al(hd){sub 3}-derived films were amorphous. The Ti(NEt{sub 2}){sub 4} precursor gave MOPPS films that appear to consist of nanosized splats of TiOCN with spheres of TiO{sub 2} anatase. While all films in this study suffered from poor adhesion, it is anticipated that the use of heated substrates will aid in the formation of dense, adherent films.

Schulz, Douglas L.; Sailer, Robert A.; Payne, Scott; Leach, James; Molz, Ronald J. [North Dakota State University, Fargo, North Dakota 58108-6050 (United States); Sulzer Metco (United States) Inc., Westbury, New York 11590-2724 (United States)

2009-07-15T23:59:59.000Z

251

Nanostructured Thin Film Electrolyte for Thin Film Solid Oxide Fuel Cells  

E-Print Network (OSTI)

Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because they are clean, reliable, and almost entirely pollution-free. SOFCs have flexible fuel selections compared with other fuel cell technologies. The main disadvantage of SOFCs is their high operating temperature (~1000șC for conventional SOFCs) which leads to cell cracking and formation of non-conducting compounds at electrolyte/electrode interfaces. Therefore, intermediate temperature SOFCs (ITSOFCs) in the range of 500-700 șC has attracted extensive research interests. To achieve high cell performance at reduced temperatures, it requires high-catalytic activity, high ionic conductivity, and comparable thermal expansion coefficient (TEC) of the cell components. To address the above issues, the research focuses on two main approaches (i.e., the interlayer approach and the electrolyte approach) in order to improve the overall cell performance. First, the design of a thin layer of a vertically-aligned nanocomposite (VAN) structure as an interlayer between the electrolyte and cathode is demonstrated. The development of the VAN structures consisted of the cathode material as a perovskite or ordered double perovskite structure, La0.5Sr0.5CoO3 (LSCO) or PrBaCo2O5 delta (PBCO), and the electrolyte material as a fluorite structure, Ce0.9Gd0.1O1.95 (CGO or GDC), were achieved for thin film solid oxide fuel cell (TFSOFCs). The VAN structure significantly improves the overall performance of the TFSOFC by increasing the interfacial area between the electrolyte and cathode and also acts as a transition layer that improves adhesion and relieves both thermal stress and lattice strain. Second, microstructural and electrical properties of Gd-doped CeO2 (GDC, Ce0.9Gd0.1O1.95) thin films electrolyte are studied for intermediate temperature solid oxide fuel cells (SOFCs). The GDC thin film electrolytes with different grain sizes and grain morphologies were prepared by varying the deposition parameters such as substrate temperature, oxygen partial pressure, target repetition rate, and laser ablation energy. The electrical property of the GDC thin film is strongly affected by the grain size. Third, bilayer electrolytes composed of a gadolinium-doped CeO2 (GDC) layer (~6 micrometer thickness) and an yttria-stabilized ZrO2 (YSZ) layer with various thicknesses (~330 nm, ~440 nm, and ~1 micrometer) are achieved by a pulsed laser deposition (PLD) technique for thin film solid oxide fuel cells (TFSOFCs). One effective approach is to incorporate YSZ thin film as a blocking layer in between the GDC and anode for preventing chemical reduction of GDC and electrical current leakage. This bilayer approach effectively improves the GDC's chemical/ mechanical stability and reduces the OCV loss under reducing conditions. The results suggest that the YSZ thin film serves as a blocking layer for preventing electrical current leakage in the GDC layer and also provides chemical, mechanical, and structural integrity in the cell, which leads to the overall enhanced performance.

Cho, Sungmee

2011-08-01T23:59:59.000Z

252

Functionalized multilayer thin films for protection against acutely toxic agents  

E-Print Network (OSTI)

The recently developed practice of spraying polyelectrolyte solutions onto a substrate in order to construct thin films via the Layer-by-Layer (LbL) technique has been further investigated and extended. In this process a ...

Krogman, Kevin Christopher

2009-01-01T23:59:59.000Z

253

Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)  

Science Conference Proceedings (OSTI)

Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

Not Available

2011-06-01T23:59:59.000Z

254

Properties and sensor performance of zinc oxide thin films  

E-Print Network (OSTI)

Reactively sputtered ZnO thin film gas sensors were fabricated onto Si wafers. The atmosphere dependent electrical response of the ZnO micro arrays was examined. The effects of processing conditions on the properties and ...

Min, Yongki, 1965-

2003-01-01T23:59:59.000Z

255

Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)  

DOE Green Energy (OSTI)

This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

Not Available

2013-06-01T23:59:59.000Z

256

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of...

257

Biological, Electronic, and Functional Thin Films and Coatings II  

Science Conference Proceedings (OSTI)

Mar 4, 2013 ... Recent Developments in Biological, Electronic, and Functional Thin Films ... Improved Mobility and Transmittance of Room Temperature ... excellent scintillator for numerous applications in lasers, optical lens and radiography.

258

Biological, Electronic, and Functional Thin Films and Coatings I  

Science Conference Proceedings (OSTI)

Mar 4, 2013... scan (PPS) and electrical impedance spectroscopy (EIS). ... Eclipse Active and Passive Solar Control Coatings: Hulya ... In this paper two novel thin film coating systems will be presented for energy conservation solar ...

259

2 Thin Films Prepared by Sequential Evaporation for Photovoltaic  

Science Conference Proceedings (OSTI)

The defects of Cu-Se di-vacancies are formed in Cu(In,Ga)Se2 thin films and influence to the solar cell performance. In this study, we have fabricated Cu(In ...

260

Shock Dynamics in Particle-Laden Thin Films  

E-Print Network (OSTI)

We present theory and experiments for thin film particle-laden flow on an incline. At higher particle concentration and inclination angle, a new phenomenon is observed in which a large particle-rich ridge forms at the ...

Dupuy, B.

2005-04-22T23:59:59.000Z

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Method for making surfactant-templated thin films  

DOE Patents (OSTI)

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (New Orleans, LA); Fan, Hong You (Albuquerque, NM)

2010-08-31T23:59:59.000Z

262

Method for making surfactant-templated thin films  

DOE Patents (OSTI)

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

2002-01-01T23:59:59.000Z

263

Direct printing of lead zirconate titanate thin films  

E-Print Network (OSTI)

Thus far, use of lead zirconate titanate (PZT) in MEMS has been limited due to the lack of process compatibility with existing MEMS manufacturing techniques. Direct printing of thin films eliminates the need for photolithographic ...

Bathurst, Stephen, 1980-

2008-01-01T23:59:59.000Z

264

Chemical vapor deposition of organosilicon and sacrificial polymer thin films  

E-Print Network (OSTI)

Chemical vapor deposition (CVD) produced films for a wide array of applications from a variety of organosilicon and organic precursors. The structure and properties of thin films were controlled by varying processing ...

Casserly, Thomas Bryan

2005-01-01T23:59:59.000Z

265

Synthesis and Patterning of Calcium and Barium Niobate Thin Films ...  

Science Conference Proceedings (OSTI)

Epitaxial CBN thin films were deposited on MgO and NSTO substrates at 800°C under 1mTorr of oxygen pressure using Pulsed Laser Deposition technique.

266

Initiated chemical vapor deposition of functional polyacrylic thin films  

E-Print Network (OSTI)

Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

Mao, Yu, 1975-

2005-01-01T23:59:59.000Z

267

Deriving Deformation Mechanisms in Nanocrystalline AuCu Thin Films  

Science Conference Proceedings (OSTI)

... in a SEM on nc gold and gold-copper thin films adherent to polymer substrate. .... Lithiation Mechanism of Individual SnO2 Nanowires in a Flooding Geometry.

268

Dry-transfer of chemical vapour deposited nanocarbon thin films  

E-Print Network (OSTI)

equipment and measurement I thank Dr Xiulia Xu, high resolution transmission electron microscopy - Dr Caterina Ducati, Mr Sai Shivareddy and Dr Jamie Warner (Oxford University) and assistance with supercapacitor manufacturing and measurement - Mr (soon... that these thin films behave, in a macroscopic sense, similar to traditional c-axis conductive graphite and deviate toward tunnel dominated conduction with increasing degrees of network disorder. Various MWCNT-based thin film field emitters were considered...

Cole, Matthew Thomas

2012-01-10T23:59:59.000Z

269

Research on polycrystalline thin-film materials, cells, and modules  

DOE Green Energy (OSTI)

The US Department of Energy (DOE) supports research activities in polycrystalline thin films through the Polycrystalline Thin-Film Program at the Solar Energy Research Institute (SERI). This program includes research and development (R D) in both copper indium diselenide and cadmium telluride thin films for photovoltaic applications. The objective of this program is to support R D of photovoltaic cells and modules that meet the DOE long-term goals of high efficiency (15%--20%), low cost ($50/m{sup 2}), and reliability (30-year life time). Research carried out in this area is receiving increased recognition due to important advances in polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules. These have become the leading thin-film materials for photovoltaics in terms of efficiency and stability. DOE has recognized this potential through a competitive initiative for the development of CuInSe{sub 2} and CdTe modules. This paper focuses on the recent progress and future directions of the Polycrystalline Thin-Film Program and the status of the subcontracted research on these promising photovoltaic materials. 26 refs., 12 figs, 1 tab.

Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

1990-11-01T23:59:59.000Z

270

Temperature effect on low-k dielectric thin films studied by ERDA  

DOE Green Energy (OSTI)

Low-k dielectric materials are becoming increasingly interesting as alternative to SiO2 with device geometries shrinking beyond the 65 nm technology node. At elevated temperatures hydrogen migration becomes an important degradation mechanism for conductivity breakdown in semiconductor devices. The possibility of hydrogen release during the fabrication process is, therefore, of great interest in the understanding of device reliability. In this study, various low-k dielectric films were subjected to thermal annealing at temperatures that are generally used for device fabrication. Elastic recoil detection analysis (ERDA) was used to investigate compositional changes and hydrogen redistribution in thin films of plasma-enhanced tetraethylortho-silicate (PETEOS), phosphorus doped silicon glass (PSG), silicon nitride (SiN) and silicon oxynitride (SiON). Except for an initial hydrogen release from the surface region in films of PETEOS and PSG, the results indicate that the elemental composition of the films was stable for at least 2 hours at 450?C.

Jensen, Jens; Possnert, Göran; Zhang, Yanwen

2008-09-23T23:59:59.000Z

271

Thin Film Packaging Solutions for High Efficiency OLED Lighting Products  

Science Conference Proceedings (OSTI)

The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology was characterized as having less than 10% change in transmission during the 15,000 hour test period; (3) demonstrated thin film encapsulation of a phosphorescent OLED device with 1,500 hours of lifetime at 60 C and 80% RH; (4) demonstrated that a thin film laminate encapsulation, in addition to the direct thin film deposition process, of a polymer OLED device was another feasible packaging strategy for OLED lighting. The thin film laminate strategy was developed to mitigate defects, demonstrate roll-to-roll process capability for high volume throughput (reduce costs) and to support a potential commercial pathway that is less dependent upon integrated manufacturing since the laminate could be sold as a rolled good; (5) demonstrated that low cost 'blue' glass substrates could be coated with a siloxane barrier layer for planarization and ion-protection and used in the fabrication of a polymer OLED lighting device. This study further demonstrated that the substrate cost has potential for huge cost reductions from the white borosilicate glass substrate currently used by the OLED lighting industry; (6) delivered four-square feet of white phosphorescent OLED technology, including novel high efficiency devices with 82 CRI, greater than 50 lm/W efficiency, and more than 1,000 hours lifetime in a product concept model shelf; (7) presented and or published more than twenty internal studies (for private use), three external presentations (OLED workshop-for public use), and five technology-related external presentations (industry conferences-for public use); and (8) issued five patent applications, which are in various maturity stages at time of publication. Delivery of thin film encapsulated white phosphorescent OLED lighting technology remains a challenging technical achievement, and it seems that commercial availability of thin, bright, white OLED light that meets market requirements will continue to require research and development effort. However, there will be glass encapsulated white OLED lighting products commercialized in niche markets during the 2008 calendar year. This commercializ

None

2008-06-30T23:59:59.000Z

272

Atmospheric Pressure Chemical Vapor Deposition of High Silica SiO2-TiO2 Antireflective Thin Films for Glass Based Solar Panels  

SciTech Connect

The atmospheric pressure chemical vapor deposition (APCVD) of SiO2-TiO2 thin films employing [[(tBuO)3Si]2O-Ti(OiPr)2], which can be prepared from commercially available materials, results in antireflective thin films on float glass under industrially relevant manufacturing conditions. It was found that while the deposition temperature had an effect on the SiO2:TiO2 ratio, the thickness was dependent on the time of deposition. This study shows that it is possible to use APCVD employing a single source precursor containing titanium and silicon to produce thin films on float glass with high SiO2:TiO2 ratios.

Klobukowski, Erik R [ORNL; Tenhaeff, Wyatt E [ORNL; McCamy, James [PPG; Harris, Caroline [PPG; Narula, Chaitanya Kumar [ORNL

2013-01-01T23:59:59.000Z

273

Understanding Thin Film Structure for the Rational Design of  

NLE Websites -- All DOE Office Websites (Extended Search)

Understanding Thin Film Structure for the Rational Design of Understanding Thin Film Structure for the Rational Design of High-performance Organic Semiconductors for Plastic Electronics Organic semiconductors are attracting considerable research interest due to their potential applications in low-cost electronics such as organic light emitting diode (OLED) displays, RF identification tags (RFID), smart cards and electronic paper. The development of p-conjugated materials, which are composed of alternating single and double chemical bonds, are the foundation of these applications. In the past decade research in this field has progressed to the extent that desirable charge transport in the organic semiconductor film in organic thin film transistors (OTFT) can be achieved through molecular design by selective placement of electron-rich, electron-withdrawing, and aromatic groups in different parts of the molecule. Although the electronic properties are easily tuned by molecular design, the molecular packing within the thin film and the film microstructure have a significant influence on the OTFT performance. Despite this importance, this interrelationship between molecular structure, thin film molecular packing and charge transport are only poorly understood.

274

Thin-film absorber for a solar collector  

DOE Green Energy (OSTI)

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, W.G.

1982-02-09T23:59:59.000Z

275

Tandem photonic-crystal thin films surpassing Lambertian light-trapping limit over broad bandwidth and angular range  

E-Print Network (OSTI)

The maximum absorption of solar radiation over the broadest range of frequencies and incident angles using the thinnest material possible has important applications for renewable-energy generation. Complete random texturing of an optically-thick film's surface to increase the path length of scattered light rays, first proposed nearly thirty years ago, has thus far remained the most effective approach for photon absorption over the widest set of conditions. Recent thin-film nanostructured designs involving resonant wave effects of photons have explored the possibility of superior performance though as of yet no proposal satisfying the dual requirements of enhanced and robust absorption over a large fraction of the solar spectrum has been made. Here using recent advances in computational electrodynamics we describe a general strategy for the design of a silicon thin film applicable to photovoltaic cells based on a quasi-resonant approach to light trapping where two partially-disordered photonic-crystal slabs, s...

Oskooi, Ardavan; Noda, Susumu

2013-01-01T23:59:59.000Z

276

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

277

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

278

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

279

Guided Self-Assembly of Gold Thin Films  

NLE Websites -- All DOE Office Websites (Extended Search)

Guided Self-Assembly of Gold Thin Films Print Guided Self-Assembly of Gold Thin Films Print Nanoparticles-man-made atoms with unique optical, electrical, and mechanical properties-have become key components in many fields of science. If nanoparticles could be coaxed into routinely assembling themselves into predictable complex structures and hierarchical patterns, devices could be mass-produced that are one thousand times smaller than today's microtechnologies. Berkeley Lab and UC Berkeley scientists have made progress toward this goal, successfully directing the self--assembly of nanoparticles into device-ready thin films, which have potential applications in fields ranging from computer memory storage to energy harvesting and storage, from catalysis to light management, and into the emerging new field of plasmonics.

280

Low Temperature Chemical Vapor Deposition Of Thin Film Magnets  

DOE Patents (OSTI)

A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

Miller, Joel S. (Salt Lake City, UT); Pokhodnya, Kostyantyn I. (Salt Lake City, UT)

2003-12-09T23:59:59.000Z

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Ultrafast laser ablation of gold thin film targets  

Science Conference Proceedings (OSTI)

Ultrafast laser ablation of a gold thin film is studied and compared with that of a bulk target, with particular emphasis given to the process of nanoparticles generation. The process is carried out in a condition where a single laser shot removes all the irradiated film spot. The experimental results evidence interesting differences and, in particular, a reduction of the nanoparticles size, and a narrowing of a factor two of their size distribution in the case of ablation of a thin film target, a feature which we relate to a more uniform heating of the target material. We thus show that ultrashort laser ablation of thin films provides a promising way of controlling plume features and nanoparticles size.

Amoruso, S.; Ausanio, G.; Bruzzese, R. [Dipartimento di Scienze Fisiche, Universita degli Studi di Napoli Federico II, Complesso Universitario di Monte S. Angelo, Via Cintia, I-80126 Napoli (Italy); CNR-SPIN, Complesso Universitario di Monte S. Angelo, Via Cintia, I-80126 Napoli (Italy); Nedyalkov, N. N.; Atanasov, P. A. [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsaridradsko shose Boulevard, Sofia 1784 (Bulgaria); Wang, X. [CNR-SPIN, Complesso Universitario di Monte S. Angelo, Via Cintia, I-80126 Napoli (Italy)

2011-12-15T23:59:59.000Z

282

Thin-film rechargeable lithium batteries for implantable devices  

DOE Green Energy (OSTI)

Thin films of LiCoO{sub 2} have been synthesized in which the strongest x-ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin-film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001 %/cycle or less. The reliability and performance of Li-LiCoO{sub 2} thin-film batteries make them attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.

Bates, J.b.; Dudney, N.J.

1997-05-01T23:59:59.000Z

283

Ruthenium-Platinum Thin Film Analysis Using Grazing Incidence X-ray Diffraction  

DOE Green Energy (OSTI)

Ruthenium (Ru, Z = 44) is a Platinum Group Metal that has a standard hexagonal close packed (HCP) crystalline structure. Platinum (Pt, Z = 78) has a face-centered cubic (FCC) crystalline structure. When these metals are co-sputtered onto a silicon substrate, creating a few nm-thin film, they form an alloy with a combination of HCP and FCC structure. Direct methanol fuel cells rely on an anode catalyst to draw hydrogen from liquid methanol. Highly efficient fuel cells based on polymer electrolyte catalysts, known as proton-exchange membrane fuel cells, have been developed, but require large amounts of a costly platinum catalyst. Thin-film nanostructure bimetallic alloys have been produced to reduce the amount of expensive Platinum needed for catalysis, and also to improve the electrochemical properties of the catalyst. Supported RuPt particles have been shown to have superior activity as anode catalysts for methanol electro-oxidation and demonstrate an improvement in resistance to poisoning in comparison to unalloyed Pt. The percentage of Ruthenium in a RuPt thin film and the process by which the alloy is produced will dictate the crystalline structure, and thus the electrochemical properties of the film. Pure Ruthenium, Pure Platinum, and eight intermediate samples at differing percent composition of Ruthenium were characterized by their X-ray diffraction patterns. The incident beam is from the Stanford Synchrotron Radiation Laboratory beam and operates at approximately a 1.4 Angstrom wavelength. The results show that 0% Ru through 46.17% Ru exhibit a majority FCC structure, 56.07% Ru and 60.61% Ru are mixed phase, and from 67.03% Ru through 100% Ru, the samples exhibit a HCP structure.

Jones, L.

2004-09-03T23:59:59.000Z

284

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents (OSTI)

A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

Mitlitsky, Fred (Livermore, CA); Truher, Joel B. (San Rafael, CA); Kaschmitter, James L. (Pleasanton, CA); Colella, Nicholas J. (Livermore, CA)

1998-02-03T23:59:59.000Z

285

Fabrication of polycrystalline thin films by pulsed laser processing  

DOE Patents (OSTI)

A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

1998-02-03T23:59:59.000Z

286

Effects of humidity during photoprocessing on thin film metallization adhesion  

SciTech Connect

Humidity effects during photoprocessing on tantalum/chromium/gold thin film networks (TFNs) were investigated. Humidity conditions at various process steps were controlled by placing either desiccant or water in handling containers for the TFNs. The TFNs photoprocessed in humid conditions had a much higher occurrence of metallization failures compared to TFNs processed in dry conditions. Ceramic surface defects were shown to cause pores in the thin films, and these pores enhanced corrosion susceptibility for the films. This study resulted in a desiccated storage process for production of TFNs.

Norwood, D.P.

1980-03-01T23:59:59.000Z

287

Method of improving field emission characteristics of diamond thin films  

DOE Patents (OSTI)

A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

Krauss, Alan R. (Naperville, IL); Gruen, Dieter M. (Downer Grove, IL)

1999-01-01T23:59:59.000Z

288

HIGHLY STABLE AMORPHOUS SILICON THIN FILM TRANSISTORS AND INTEGRATION  

E-Print Network (OSTI)

ORGANIC LIGHT EMITTING DIODE DISPLAYS ON CLEAR PLASTIC Bahman Hekmatshoar A DISSERTATION PRESENTED insensitive to the TFT threshold voltage rise which is well-known in a-Si:H devices. Organic light-emitting diodes (OLEDs) are a future technology choice for flexible displays with several advantages over liquid

289

Strained germanium thin film membrane on silicon substrate for optoelectronics  

E-Print Network (OSTI)

-temperature direct bandgap electroluminesence from Ge- on-Si light-emitting diodes," Opt. Lett. 34(8), 1198 temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate," Opt. Express 17

Miller, David A. B.

290

Initiated chemical vapor deposition of polymeric thin films : mechanism and applications  

E-Print Network (OSTI)

Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness ...

Chan, Kelvin, Ph. D. Massachusetts Institute of Technology

2005-01-01T23:59:59.000Z

291

Characterization of LiNi?.?Mn?.?O? Thin Film Cathode Prepared by Pulsed Laser Deposition  

E-Print Network (OSTI)

LiNi?.?Mn?.?O? thin films have been grown by pulsed laser deposition (PLD) on stainless steel (SS) substrates. The crystallinity and structure of thin films were investigated by X-ray diffraction (XRD). Microstructure and ...

Xia, Hui

292

Orientation of MgO thin films on Si(001) prepared by pulsed laser deposition  

E-Print Network (OSTI)

Pulsed laser deposition method was employed to grow MgO thin films with preferred orientation on bare Si(100) and SiO?/Si(100) substrates. The orientation of MgO thin films was systematically investigated by varying ...

Zhu, Tie-Jun

293

The development of a thin-film rollforming process for pharmaceutical continuous manufacturing  

E-Print Network (OSTI)

In this thesis, a continuous rollforming process for the folding of thin-films was proposed and studied as a key step in the continuous manufacturing of pharmaceutical tablets. HPMC and PEG based polymeric thin-films were ...

Slaughter, Ryan (Ryan R.)

2013-01-01T23:59:59.000Z

294

Thin-film multichip module packages for high-end IBM servers  

Science Conference Proceedings (OSTI)

A new generation of multilevel thin-film packages has been developed for IBM high-end S/390ź and AS/400ź systems. Thin-film structures in these packages are nonplanar and can be fabricated by either pattern electroplating ...

E. D. Perfecto; A. P. Giri; R. R. Shields; H. P. Longworth; J. R. Pennacchia; M. P. Jeanneret

1998-09-01T23:59:59.000Z

295

Preparation of thin film solar cells under very low pressure conditions. Final report, October 1, 1976--September 30, 1977  

DOE Green Energy (OSTI)

In this study the feasibility of fabricating backwall Schottky barrier polycrystalline solar cells under ultra-high vacuum conditions of 1 x 10/sup -10/ torr (N/sub 2/) was investigated. Thin films of electron beam vaporized silicon were deposited on cleaned metal substrates of tungsten, tantalum and hafnium. Mass spectra from the quadrapole residual gas analyzer were used to determine the partial pressure of peak heights of 13 residual gases during each processing step. During separate silicon depositions, the substrate temperature was varied between 400 and 750/sup 0/C and deposition rates between 20 and 750 A/min were used. Surface contamination and metal diffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition and annealing. Auger depth profiling, x-ray analysis, and SEM in the topographic and channeling modes, were utilized to characterize the samples with respect to silicon-metal boundary layer, interdiffusion, silicide formation and grain size of silicon. The clean metal surface was found to enhance thin film silicide growth. Fine grain silicon films were obtained for all samples that were not completely converted to a metallic silicide. Tungsten, tantalum and hafnium were found to form silicides at temperatures as low as 600/sup 0/C.

Schmidt, F.A.; Shanks, H.R.; Bevolo, A.J.; Campisi, G.J.

1977-01-01T23:59:59.000Z

296

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

DOE Green Energy (OSTI)

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

297

Development of Y-doped ZnO Thin Films via Novel Ink Jet Printing ...  

Science Conference Proceedings (OSTI)

Synthesis and Characterization of Plasma Polymerized Thin Films Deposited from Benzene and Hexamethyldisiloxane Using (PECVD) Method · Synthesis and ...

298

Some a priori estimates for a singular evolution equation arising in thin-film dynamics  

Science Conference Proceedings (OSTI)

Keywords: finite extinction time, global Harnack inequality, ill-posed problem, porous-medium equation, thin-film dynamics

Stephen H. Davis; Emmanuele DiBenedetto; David J. Diller

1996-05-01T23:59:59.000Z

299

Time-Resolved Magnetic Flux and AC-Current Distributions in Superconducting YBCO Thin Films and  

E-Print Network (OSTI)

Time-Resolved Magnetic Flux and AC-Current Distributions in Superconducting YBCO Thin Films magnetic field. We study the interaction behavior of YBCO thin films in an ac transport current and a dc the calibrated field profiles. The current density evolution in YBCO thin films is studied by TRMOI as a function

Lewis, Robert Michael

300

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b  

E-Print Network (OSTI)

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b , Ounsi of an absorbing planar photonic crystal within a thin film photovoltaic cell. The devices are based on a stack with large areas. Keywords: Photonic crystal, Photovoltaic solar cell, Thin film solar cell, Hydrogenated

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Microwave plasma assisted supersonic gas jet deposition of thin film materials  

DOE Patents (OSTI)

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

Schmitt, III, Jerome J. (New Haven, CT); Halpern, Bret L. (Bethany, CT)

1993-01-01T23:59:59.000Z

302

Identification, Characterization, and Implications of Shadow Degradation in Thin Film Solar Cells  

E-Print Network (OSTI)

that the SD is a generic reliability concern for all thin film PV technologies, however, in this paper we, USA Abstract-- We describe a comprehensive study of intrinsic reliability issue arising from partial reliability concern for thin film solar cell. Keywords ­ Thin film solar cells, voltage stress, performance

Alam, Muhammad A.

303

Thin Films and the Systems-Driven Approach  

DOE Green Energy (OSTI)

A systems-driven approach is used to discern tradeoffs between cost and efficiency improvements for various thin-film module technologies and designs. Prospects for reduced system cost via such strategies are enhanced as balance-of-systems costs decline, and some strategies are identified for greater research focus.

Zweibel, K.

2005-01-01T23:59:59.000Z

304

Method for double-sided processing of thin film transistors  

DOE Patents (OSTI)

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Yuan, Hao-Chih (Madison, WI); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI); Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI)

2008-04-08T23:59:59.000Z

305

Front and backside processed thin film electronic devices  

DOE Patents (OSTI)

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Yuan, Hao-Chih (Madison, WI); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI); Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI)

2010-10-12T23:59:59.000Z

306

Method of preparing thin film polymeric gel electrolytes  

DOE Patents (OSTI)

Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

Derzon, Dora K. (Albuquerque, NM); Arnold, Jr., Charles (Albuquerque, NM)

1997-01-01T23:59:59.000Z

307

ITO Thin Films by RF Sputtering for Ethanol Sensing  

Science Conference Proceedings (OSTI)

The sensor for detection of ethanol vapours using RF sputter deposited ITO thin film on glass and Si substrates is reported. The principle of operation is the change of resistance of ITO film on exposure to ethanol vapours. The films were annealed at ... Keywords: Indium Tin Oxide, RF sputtering, ethanol sensor

Sudhir Chandra; H. J. Pandya; A. L. Vyas

2010-07-01T23:59:59.000Z

308

Avalanches through windows: Multiscale visualization in magnetic thin films  

E-Print Network (OSTI)

Avalanches through windows: Multiscale visualization in magnetic thin films Alessandro Magni dynamics, but are strongly dependent on the size of the windows chosen. Here we investigate how to properly sub-window of the entire sample. Usually, windows of varying sizes are used, and the distributions

Sethna, James P.

309

Front and backside processed thin film electronic devices  

Science Conference Proceedings (OSTI)

This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Evans, Paul G. (Madison, WI); Lagally, Max G. (Madison, WI); Ma, Zhenqiang (Middleton, WI); Yuan, Hao-Chih (Lakewood, CO); Wang, Guogong (Madison, WI); Eriksson, Mark A. (Madison, WI)

2012-01-03T23:59:59.000Z

310

Perovskite phase thin films and method of making  

DOE Patents (OSTI)

The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

Boyle, Timothy J. (Albuquerque, NM); Rodriguez, Mark A. (Albuquerque, NM)

2000-01-01T23:59:59.000Z

311

Electroplating of Cu(Ag) thin films for interconnect applications  

Science Conference Proceedings (OSTI)

Electromigration effects in interconnect metallizations cause a need for materials with superior resistance against electromigration failure but with adequate electrical properties. In principle, Cu(Ag) alloys are potential candidates to become an interconnect ... Keywords: Copper-silver alloy thin film, Electrochemical deposition, Interconnect material

S. Strehle; S. Menzel; J. W. Bartha; K. Wetzig

2010-02-01T23:59:59.000Z

312

Nanostructured thin films for solid oxide fuel cells  

E-Print Network (OSTI)

The goals of this work were to synthesize high performance perovskite based thin film solid oxide fuel cell (TF-SOFC) cathodes by pulsed laser deposition (PLD), to study the structural, electrical and electrochemical properties of these cathodes and to establish structure-property relations for these cathodes in order to further improve their properties and design new structures. Nanostructured cathode thin films with vertically-aligned nanopores (VANP) were processed using PLD. These VANP structures enhance the oxygen-gas phase diffusivity, thus improve the overall TF-SOFC performance. La0.5Sr0.5CoO3 (LSCO) and La0.4Sr0.6Co0.8Fe0.2O3 (LSCFO) were deposited on various substrates (YSZ, Si and pressed Ce0.9Gd0.1O1.95 (CGO) disks). Microstructures and properties of the nanostructured cathodes were characterized by transmission electron microscope (TEM), high resolution TEM (HRTEM), scanning electron microscope (SEM) and electrochemical impedance spectroscopy (EIS) measurements. A thin layer of vertically-aligned nanocomposite (VAN) structure was deposited in between the CGO electrolyte and the thin film LSCO cathode layer for TF-SOFCs. The VAN structure consists of the electrolyte and the cathode materials in the composition of (CGO) 0.5 (LSCO) 0.5. The self-assembled VAN nanostructures contain highly ordered alternating vertical columns formed through a one-step thin film deposition using a PLD technique. These VAN structures significantly increase the interface area between the electrolyte and the cathode as well as the area of active triple phase boundary (TPB), thus improving the overall TF-SOFC performance at low temperatures, as low as 400oC, demonstrated by EIS measurements. In addition, the binary VAN interlayer could act as the transition layer that improves the adhesion and relieves the thermal stress and lattice strain between the cathode and the electrolyte. The microstructural properties and growth mechanisms of CGO thin film prepared by PLD technique were investigated. Thin film CGO electrolytes with different grain sizes and crystal structures were prepared on single crystal YSZ substrates under different deposition conditions. The effect of the deposition conditions such as substrate temperature and laser ablation energy on the microstructural properties of these films are examined using XRD, TEM, SEM, and optical microscope. CGO thin film deposited above 500 șC starts to show epitaxial growth on YSZ substrates. The present study suggests that substrate temperature significantly influences the microstructure of the films especially film grain size.

Yoon, Jongsik

2008-12-01T23:59:59.000Z

313

Synthesis, structural and electrochemical properties of electron beam evaporated V{sub 2}O{sub 5} thin films  

Science Conference Proceedings (OSTI)

Vanadium pentoxide is one of the most promising cathode materials because it offers high energy density, low cost, low toxicity over the other cathode materials. Its layered and open structure makes this material in thin film form well suited for electro-chemical insertion reactions with the Li ions. In the present investigation, V{sub 2}O{sub 5} thin films have been prepared by electron beam evaporation technique on gold coated silicon substrates maintained at a substrate temperature of 250 Degree-Sign C in an oxygen partial pressure of 2 Multiplication-Sign 10{sup -4} mbar. The XRD patterns exhibited three predominant diffraction peaks corresponding to (200) (001) and (400) planes of orthorhombic phase of V{sub 2}O{sub 5} with P{sub mnm} space group. The electrochemical characteristics of V{sub 2}O{sub 5} thin films with thickness of 600 nm were examined in non-aqueous region. The film exhibited step wise discharge with two plateaus. The as-deposited film delivered a discharge capacity of 70 {mu}Ah/(cm{sup 2}-{mu}m) at a current density of 30 {mu}A/cm{sup 2}. Annealing of these films at 450 Degree-Sign C exhibited a better discharge capacity of 90 {mu}Ah/(cm{sup 2}-{mu}m).

Hussain, O. M.; Rosaiah, P. [Thin Film Laboratory, Department of Physics, Sri Venkateswara University, Tirupati-517 502 (India)

2012-06-25T23:59:59.000Z

314

Institute of Photo Electronic Thin Film Devices and Technology of Nankai  

Open Energy Info (EERE)

Electronic Thin Film Devices and Technology of Nankai Electronic Thin Film Devices and Technology of Nankai University Jump to: navigation, search Name Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University Place Tianjin Municipality, China Zip 300071 Sector Solar Product A thin-film solar cell research institute in China. References Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University is a company located in Tianjin Municipality, China . References ↑ "Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University"

315

Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties  

Science Conference Proceedings (OSTI)

Thin film capacitors were fabricated by sputtering TiN-Y doped HfO{sub 2}-TiN stacks on silicon substrates. Yttrium was incorporated into the HfO{sub 2} layers by simultaneously sputtering from Y{sub 2}O{sub 3} and HfO{sub 2} sources. Electric polarization and relative permittivity measurements yield distinct ferroelectric properties as a result of low yttrium dopant concentrations in the range of 0.9-1.9 mol. %. Grazing incidence x-ray diffraction measurements show the formation of an orthorhombic phase in this range. Compared to atomic layer deposition films, the highest remanent polarization and the highest relative permittivity were obtained at significantly lower doping concentrations in these sputtered films.

Olsen, T. [NaMLab gGmbH, 01187 Dresden (Germany); Department of Electrical and Computer Engineering, University of Alberta, Edmonton T6G 2V4 (Canada); Schroeder, U.; Mueller, S.; Krause, A.; Martin, D.; Singh, A. [NaMLab gGmbH, 01187 Dresden (Germany); Mueller, J. [Fraunhofer CNT, 01099 Dresden (Germany); Geidel, M. [Institute of Semiconductors and Microsystems, Technische Universitaet Dresden, 01062 Dresden (Germany); Mikolajick, T. [NaMLab gGmbH, 01187 Dresden (Germany); Institute of Semiconductors and Microsystems, Technische Universitaet Dresden, 01062 Dresden (Germany)

2012-08-20T23:59:59.000Z

316

Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module  

SciTech Connect

We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

2013-06-01T23:59:59.000Z

317

Thin film transistors and solar cells. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search  

Science Conference Proceedings (OSTI)

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 250 citations and includes a subject term index and title list.)

NONE

1995-01-01T23:59:59.000Z

318

Thin film transistors and solar cells. (Latest citations from the US Patent Bibliographic File with Exemplary Claims). Published Search  

SciTech Connect

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 250 citations and includes a subject term index and title list.)

Not Available

1993-11-01T23:59:59.000Z

319

Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering  

SciTech Connect

The electrical and optical properties of Ta{sub x}Si{sub y}N{sub z} thin films deposited by reactive magnetron sputtering from individual Ta and Si targets were studied in order to investigate the effects of nitrogen and silicon contents on both properties and their correlation to the film microstructure. Three sets of fcc-Ta{sub x}Si{sub y}N{sub z} thin films were prepared: sub-stoichiometric Ta{sub x}Si{sub y}N{sub 0.44}, nearly stoichiometric Ta{sub x}Si{sub y}N{sub 0.5}, and over-stoichiometric Ta{sub x}Si{sub y}N{sub 0.56}. The optical properties were investigated by near-normal-incidence reflectivity and ellipsometric measurements in the optical energy range from 0.375 eV to 6.8 eV, while the d.c. electrical resistivity was measured in the van der Pauw configuration from 20 K to 300 K. The optical and electrical measurements were interpreted using the standard Drude-Lorentz model and the so-called grain boundary scattering model, respectively. The electronic properties were closely correlated with the compositional and structural modifications of the Ta{sub x}Si{sub y}N{sub z} films due to variations in the stoichiometry of the fcc-TaN{sub z} system and the addition of Si atoms. According to the nitrogen and silicon contents, fcc-Ta{sub x}Si{sub y}N{sub z} films can exhibit room temperature resistivity values ranging from 10{sup 2} {mu}{Omega} cm to about 6 Multiplication-Sign 10{sup 4} {mu}{Omega} cm. The interpretation of the experimental temperature-dependent resistivity data within the Grain Boundary Scattering model, combined with the results from optical investigations, showed that the mean electron transmission probability G and the free carriers concentration, N, are the main parameters that control the transport properties of these films. The results indicated that the correlation between electrical and optical measurements with the chemical composition and the nanostructure of the Ta{sub x}Si{sub y}N{sub z} thin films provides a pertinent and consistent description of the evolution of the Ta-Si-N system from a solid solution to a nanocomposite material due to the addition of Si atoms.

Oezer, D.; Sanjines, R. [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Condensed Matter Physics (ICMP), CH-1015 Lausanne (Switzerland); Ramirez, G.; Rodil, S. E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, CU, Mexico D.F. 04510 (Mexico)

2012-12-01T23:59:59.000Z

320

Kinetics of hydrogen desorption in surface-limited thin-film growth of SiGe alloys  

DOE Green Energy (OSTI)

The kinetics of hydrogen desorption in surface-limited thin-film growth of SiGe alloys from binary mixtures of disilane and digermane was investigated by surface differential reflectance. The hydrogen desorption process from the alloy surface was found to consist of two components. Both components are thermally activated, but the activation energies appear to equal neither the hydrogen desorption energy from pure silicon nor that from pure germanium surfaces. We suggest that the two components represent Ge- and Si-mediated hydrogen desorption, with the former being more rapid than the latter.

Sharp, J.W. (Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996 (United States)); Eres, G. (Oak Ridge National Laboratory, P. O. Box 2008, Solid State Division, Bldg. 2000 MS 6056, Oak Ridge, Tennessee 37831-6056 (United States))

1993-05-31T23:59:59.000Z

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Pulsed laser processing of high temperature superconducting thin films  

SciTech Connect

Systematic studies of the effects of pulsed laser deposition processing parameters on plume dynamics and resultant film properties have been performed. Plume angular distributions, cos{sup m}({theta}), were observed to be variable between 1 > m > 10 depending on laser energy density and spot size. Under optimized conditions, epitaxial, superconducting thin films could be grown in-situ on a variety of single-crystal substrates. High quality, 200 nm thick films were obtained at deposition rates approaching 15 nm/sec. Additionally, the patterning of YBa{sub 2}Cu{sub 3}O{sub 7-x} thin films has been achieved by a process which combines thermal oxygen diffusion and laser annealing. This process is performed under relatively mild conditions which allows the structural integrity of the films to be preserved. 9 refs., 6 figs.

Muenchausen, R.E.; Dye, R.C.; Estler, R.C.; Foltyn, S.; Garcia, A.R.; Hubbard, K.M.; Nogar, N.S.; Wu, X.D. (Los Alamos National Lab., NM (USA)); Carim, A.; Mukherjee, A.; Brueck, S.R.J. (New Mexico Univ., Albuquerque, NM (USA))

1990-01-01T23:59:59.000Z

322

Characterization of Thin Films by XAFS: Application to Spintronics Materials  

SciTech Connect

X-ray absorption fine structure (XAFS) has proven very valuable in characterizing thin films. This is illustrated with some examples from the area of diluted magnetic semiconductor (DMS) materials for spintronics applications. A promising route to DMS materials is doping of oxides such as TiO2 and ZnO with magnetic atoms such as Co. These can be grown as epitaxial thin films on various substrates. XAFS is especially valuable for characterizing the dopant atoms. The near edge region is sensitive to the symmetry of the bonding and valence of the dopants, and the extended XAFS can determine the details of the lattice site. XAFS is also valuable for detecting metallic nanoparticles. These can be difficult to detect by other methods, and can give a spurious magnetic signal. The power of XAFS is illustrated by examples from studies on Co doped ZnO films.

Heald, Steve M.; Kaspar, Tiffany C.; Droubay, Timothy; Chambers, Scott A.

2009-10-25T23:59:59.000Z

323

Organic thin film prehistory: looking towards solution phase aggregation |  

NLE Websites -- All DOE Office Websites (Extended Search)

Organic thin film prehistory: looking towards solution phase aggregation Organic thin film prehistory: looking towards solution phase aggregation Wednesday, November 6, 2013 - 3:00pm SLAC, Redtail Hawk Conference Room 108A Christopher Tassone, SSRL Polymer bulk heterojunction (BHJ) solar cells have attracted significant attention in industry and academia because of their potential for achieving large-area, light-weight, and flexible photovoltaic devices through cost-effective solution deposition techniques. These devices consist of a blend of an absorbing polymer and an electron accepting fullerene, the molecular packing and phase segregation of which heavily influence power conversion efficiency by effecting important processes such as exciton splitting, charge transport, and recombination. Understanding and utilization of molecular interactions to predicatively control the

324

Engineering Thin-Film Oxide Interfaces | Advanced Photon Source  

NLE Websites -- All DOE Office Websites (Extended Search)

Novel Materials Become Multifunctional at the Ultimate Quantum Limit Novel Materials Become Multifunctional at the Ultimate Quantum Limit Outsmarting Flu Viruses How Lead-Free Solder (Mis)Behaves under Stress Dynamics of Polymer Chains Atop Different Materials Priming the Pump in the Fight against Drug-Resistant Tuberculosis Science Highlights Archives: 2013 | 2012 | 2011 | 2010 2009 | 2008 | 2007 | 2006 2005 | 2004 | 2003 | 2002 2001 | 2000 | 1998 | Subscribe to APS Science Highlights rss feed Engineering Thin-Film Oxide Interfaces NOVEMBER 12, 2012 Bookmark and Share LAO thin films on STO substrates are depicted in the top schematics (LAO indicated by blue spheres, STO by green spheres). The top left-hand panel demonstrates a chemically broad interface resulting from conventional growth in a low pressure oxygen environment. In contrast, the top

325

Status of High Performance PV: Polycrystalline Thin-Film Tandems  

DOE Green Energy (OSTI)

The High-Performance Photovoltaic (HiPerf PV) Project was initiated by the U.S. Department of Energy to substantially increase the viability of photovoltaics (PV) for cost-competitive applications so that PV can contribute significantly to our energy supply and our environment. The HiPerf PV Project aims at exploring the ultimate performance limits of existing PV technologies, approximately doubling their sunlight-to-electricity conversion efficiencies during its course. This work includes bringing thin-film cells and modules toward 25% and 20% efficiencies, respectively, and developing multijunction concentrator cells and modules able to convert more than one-third of the sun's energy to electricity (i.e., 33% efficiency). This paper will address recent accomplishments of the NREL in-house research effort involving polycrystalline thin-film tandems, as well as the research efforts under way in the subcontracted area.

Symko-Davies, M.

2005-02-01T23:59:59.000Z

326

Thin film battery and method for making same  

DOE Patents (OSTI)

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode. Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between [minus]15 C and 150 C. 9 figs.

Bates, J.B.; Dudney, N.J.; Gruzalski, G.R.; Luck, C.F.

1994-08-16T23:59:59.000Z

327

Thin film photovoltaic device and process of manufacture  

DOE Patents (OSTI)

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Albright, S.P.; Chamberlin, R.

1997-10-07T23:59:59.000Z

328

Thin film photovoltaic device and process of manufacture  

DOE Patents (OSTI)

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

1997-10-07T23:59:59.000Z

329

Thin film photovoltaic device and process of manufacture  

DOE Patents (OSTI)

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Albright, S.P.; Chamberlin, R.

1999-02-09T23:59:59.000Z

330

Thin film photovoltaic device and process of manufacture  

DOE Patents (OSTI)

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Albright, Scot P. (Lakewood, CO); Chamberlin, Rhodes (El Paso, TX)

1999-02-09T23:59:59.000Z

331

Thin film battery and method for making same  

SciTech Connect

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

Bates, John B. (Oak Ridge, TN); Dudney, Nancy J. (Knoxville, TN); Gruzalski, Greg R. (Oak Ridge, TN); Luck, Christopher F. (Knoxville, TN)

1994-01-01T23:59:59.000Z

332

Effects of acetylacetone additions on PZT thin film processing  

SciTech Connect

Sol-gel processing methods are frequently used for the fabrication of lead zirconate titanate (PZT) thin films for many electronic applications. Our standard approach for film fabrication utilizes lead acetate and acetic acid modified metal alkoxides of zirconium and titanium in the preparation of our precursor solutions. This report highlights some of our recent results on the effects of the addition of a second chelating ligand, acetylacetone, to this process. The authors discuss the changes in film drying behavior, densification and ceramic microstructure which accompany acetylacetone additions to the precursor solution and relate the observed variations in processing behavior to differences in chemical precursor structure induced by the acetylacetone ligand. Improvements in thin film microstructure, ferroelectric and optical properties are observed when acetylacetone is added to the precursor solution.

Schwartz, R.W.; Assink, R.A.; Dimos, D.; Sinclair, M.B.; Boyle, T.J.; Buchheit, C.D.

1995-02-01T23:59:59.000Z

333

Polycrystalline thin-film module and system performance  

DOE Green Energy (OSTI)

The Module and System Performance and Engineering Project at the National Renewable Energy Laboratory (NREL) conducts in-situ technical evaluations of photovoltaic (PV) modules and systems (arrays). These evaluations on module/array performance and stability are conducted at the NREL Photovoltaic Outdoor Test Facility (OTF) in Golden, CO. The modules and arrays are located at 39.7{degree}N latitude, 105.2{degree}W longitude, and at 1,782 meters elevation. Currently, two polycrystalline thin-film technologies are the focus of the research presented here. The module structures are copper indium diselenide (CIS) from Siemens Solar Industries and cadmium telluride (CdTe) from Solar Cells, Inc. The research team is attempting to correlate individual module performance with array performance for these two polycrystalline thin-film technologies. This is done by looking at module and array performance over time. Also, temperature coefficients are determined at both the module and array level. Results are discussed.

Strand, T.; Kroposki, B.; Hansen, R.; Mrig, L.

1995-11-01T23:59:59.000Z

334

Experimental thin film deposition and surface analysis techniques  

DOE Green Energy (OSTI)

An attempt has been made to present some of the thin-film deposition and surface analysis techniques which may be useful in growing superionic conducting materials. Emphasis is made on the importance of being careful in selecting process parameters and materials in order to produce films with properties outlined in this article. Also, special care should be given to proper consideration of grain boundary effects.

Collins, W.E.; Rambabu, B.

1986-01-01T23:59:59.000Z

335

Synthesis of thin films and materials utilizing a gaseous catalyst  

Science Conference Proceedings (OSTI)

A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.

Morse, Daniel E; Schwenzer, Birgit; Gomm, John R; Roth, Kristian M; Heiken, Brandon; Brutchey, Richard

2013-10-29T23:59:59.000Z

336

Preparation of redox polymer cathodes for thin film rechargeable batteries  

DOE Patents (OSTI)

The present invention relates to the manufacture of thin film solid state electrochemical devices using composite cathodes comprising a redox polymer capable of undergoing oxidation and reduction, a polymer solid electrolyte and conducting carbon. The polymeric cathode material is formed as a composite of radiation crosslinked polymer electrolytes and radiation crosslinked redox polymers based on polysiloxane backbones with attached organosulfur side groups capable of forming sulfur-sulfur bonds during electrochemical oxidation.

Skotheim, T.A.; Lee, H.S.; Okamoto, Yoshiyuki.

1994-11-08T23:59:59.000Z

337

Growth and Characterization of Epitaxial Oxide Thin Films  

E-Print Network (OSTI)

of these morphological changes was found to be dependent on a number of factors including deposition rates, flux and energy of bombarding ions, and the average angle of incidence of Glow Discharge Glow Discharge -V (DC) Cathode (Target) Insulation Substrates Anode Vacuum... techniques such as reflected high energy electron diffraction (RHEED) and low energy electron diffraction (LEED) can give valuable information about the initial growth mechanisms and surface structure of the very thin films during growth in an in-situ manner...

Garg, Ashish

338

Optical sensors and multisensor arrays containing thin film electroluminescent devices  

DOE Patents (OSTI)

Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.

Aylott, Jonathan W. (Ann Arbor, MI); Chen-Esterlit, Zoe (Ann Arbor, MI); Friedl, Jon H. (Ames, IA); Kopelman, Raoul (Ann Arbor, MI); Savvateev, Vadim N. (Ames, IA); Shinar, Joseph (Ames, IA)

2001-12-18T23:59:59.000Z

339

Substrates suitable for deposition of superconducting thin films  

DOE Patents (OSTI)

A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

Feenstra, Roeland (Oak Ridge, TN); Boatner, Lynn A. (Oak Ridge, TN)

1993-01-01T23:59:59.000Z

340

Hysteresis in Thin-Film Rechargeable Lithium Batteries  

SciTech Connect

Discharge - charge cycling of thin-film rechargeable lithium batteries with an amorphous or nanocrystalline LiXMn2.Y04 cathode reveals evidence for a true hysteresis in the lithium insertion reaction. This is compared with an apparent hysteresis attributed to a kinetically hindered phase transition near 3 V for batteries with either a crystalline or a nanocrystalline LiJ@Yo4 cathode.

Bates, J.B.; Dudney, N.J.; Evans, C.D.; Hart, F.X.

1999-04-25T23:59:59.000Z

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Fabrication and testing of thermoelectric thin film devices  

DOE Green Energy (OSTI)

Two thin-film thermoelectric devices are experimentally demonstrated. The relevant thermal loads on the cold junction of these devices are determined. The analytical form of the equation that describes the thermal loading of the device enables one to model the performance based on the independently measured electronic properties of the films forming the devices. This model elucidates which parameters determine device performance, and how they can be used to maximize performance.

Wagner, A.V.; Foreman, R.J.; Summers, L.J.; Barbee, T.W. Jr.; Farmer, J.C. [Lawrence Livermore National Lab., CA (United States). Chemistry and Materials Science Dept.

1996-03-01T23:59:59.000Z

342

Antiguided fiber ribbon laser  

DOE Patents (OSTI)

The invention is a ribbon of an optical material with a plurality of cores that run along its length. The plurality of cores includes lasing impurity doped cores in an alternating spaced arrangement with index-modifying impurity doped cores. The ribbon comprises an index of refraction that is substantially equal to or greater than the indices of refraction of said array of lasing impurity doped cores. Index-increasing impurity doped cores promote antiguiding and leaky modes which provide more robust single "supermode" operation.

Wilcox, Russel B. (El Cerrito, CA); Page, Ralph H. (Castro Valley, CA); Beach, Raymond J. (Livermore, CA); Feit, Michael D. (Livermore, CA); Payne, Stephen A. (Castro Valley, CA)

2003-05-27T23:59:59.000Z

343

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts  

DOE Patents (OSTI)

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Jansen, Kai W. (Lawrenceville, NJ); Maley, Nagi (Exton, PA)

2000-01-01T23:59:59.000Z

344

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts  

DOE Patents (OSTI)

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Jansen, Kai W. (Lawrenceville, NJ); Maley, Nagi (Exton, PA)

2001-01-01T23:59:59.000Z

345

A large polarization in Ce-modified bismuth ferrite thin films  

Science Conference Proceedings (OSTI)

Bi{sub 0.95}Ce{sub 0.05}FeO{sub 3} (BCFO) thin films were grown on SrRuO{sub 3}/TiO{sub 2}/SiO{sub 2}/Si(100) substrates via radio frequency sputtering. The BCFO thin film has a (111) orientation with a high phase purity. Improved dielectric behavior is observed for the BCFO thin film as compared with that of pure bismuth ferrite thin film. A large remanent polarization of 2P{sub r} {approx} 183.9 {mu}C/cm{sup 2} is induced in the BCFO thin film, owing to the (111) orientation and the introduction of Ce. The local phase decomposition induced by larger depolarization fields and the oxygen vacancies dominates the fatigue resistance of the BCFO thin film.

Wang Yuanyu [College of Materials Science and Metallurgy Engineering, Guizhou University, Guiyang 550003 (China)

2011-06-15T23:59:59.000Z

346

Microwave plasma assisted supersonic gas jet deposition of thin film materials  

DOE Patents (OSTI)

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

Schmitt, J.J. III; Halpern, B.L.

1993-10-26T23:59:59.000Z

347

Deployable telescope having a thin-film mirror and metering structure  

Science Conference Proceedings (OSTI)

A deployable thin-film mirror telescope comprises a base structure and a metering structure. The base structure houses a thin-film mirror, which can be rolled for stowage and unrolled for deployment. The metering structure is coupled to the base structure and can be folded for stowage and unfolded for deployment. In the deployed state, the unrolled thin-film mirror forms a primary minor for the telescope and the unfolded metering structure positions a secondary minor for the telescope.

Krumel, Leslie J. (Cedar Crest, NM); Martin, Jeffrey W. (Albuquerque, NM)

2010-08-24T23:59:59.000Z

348

Effect of Heat Treatment on Cyclic Fatigue Properties of Thin Films of ...  

Science Conference Proceedings (OSTI)

Abstract Scope, Mobile devices, such as cellphones, notebook and tablet computers, have become daily necessities. Small switches made from thin films of ...

349

The Effects of Interfaces on the Ultrafast Irradiation of Thin Films  

Science Conference Proceedings (OSTI)

Presentation Title, The Effects of Interfaces on the Ultrafast Irradiation of Thin Films ... Abstract Scope, The ultrafast laser irradiation of bulk materials is a ...

350

Electrochemical kinetics of thin film vanadium pentoxide cathodes for lithium batteries  

E-Print Network (OSTI)

Electrochemical experiments were performed to investigate the processing-property-performance relations of thin film vanadium pentoxide cathodes used in lithium batteries. Variations in microstructures were achieved via ...

Mui, Simon C., 1976-

2005-01-01T23:59:59.000Z

351

Thin-Film Fiber Optic Sensors for Power Control and Fault Detection. Final Report  

Science Conference Proceedings (OSTI)

Described is the development of an optical current measurement device, an active power conditioning system, and sol gel type thin films for the detection of magnetic fields.

Duncan, Paul Grems

2003-09-30T23:59:59.000Z

352

Highly Transparent and Conducting ALD of Doped ZnO Thin Films ...  

Science Conference Proceedings (OSTI)

... and Conducting ALD of Doped ZnO Thin Films for TCO Applications · Hybrid Aerogel/Nanorod Functional Materials for Energy and Sensing Applications.

353

Stress Management: X-Rays Reveal Si Thin-Film Defects  

Science Conference Proceedings (OSTI)

Stress Management: X-Rays Reveal Si Thin-Film Defects. ... Advanced Photon Source, and supported in part by the Department of Energy. ...

2011-04-26T23:59:59.000Z

354

Design Method for Light Absorption Enhancement in Ultra-Thin Film ...  

Science Conference Proceedings (OSTI)

ultra-thin film organic solar cells (OSCs) to improve the light absorption. ... In the promising field of solar cells, organic solar cells (OSCs) are advantageous in its ...

355

Polycrystalline Thin Film Photovoltaics: From the Laboratory to Solar Fields; Preprint  

DOE Green Energy (OSTI)

We review the status of commercial polycrystalline thin-film solar cells and photovoltaic (PV) modules, including current and projected commercialization activities.

von Roedern, B.; Ullal, H. S.; Zweibel, K.

2006-05-01T23:59:59.000Z

356

Minutes of the 2007 Spring Meeting TMS Thin Films and Interfaces ...  

Science Conference Proceedings (OSTI)

Minutes of the 2007 Spring Meeting. TMS Thin Films and Interfaces Committee. Orlando, FL. February 25, 2007. 3:00-4:00 pm. Present: DP Field (Washington ...

357

N-1: Use of Nanostructured Sn Thin Film Anodes for Lithium Ion ...  

Science Conference Proceedings (OSTI)

XRD analyses proved that the thin film was made of nano crystalline Sn particles. The galvanostatic charge discharge results showed that the nano porous Sn ...

358

The Role of Line Defects on the Conductivity of Thin-film Yttria ...  

Science Conference Proceedings (OSTI)

Presentation Title, The Role of Line Defects on the Conductivity of Thin-film Yttria- stabilized Zirconia. Author(s), Edmund Mills, Nigel Browning, Yayoi Takamura, ...

359

Titanium Oxides Thin Film Anodes for All-Solid-State Lithium Ion ...  

Science Conference Proceedings (OSTI)

Metallic lithium is not a suitable anode material for all-solid-state thin film batteries ... Application of Biomass Waste Materials in the Nano Mineral Synthesis.

360

Aging phenomena in PMMA thin films -- memory and rejuvenation effects  

E-Print Network (OSTI)

Aging dynamics in thin films of poly(methyl methacrylate) (PMMA) have been investigated through dielectric measurements for different types of aging processes. The dielectric constant was found to decrease with increasing aging time at an aging temperature in many cases. An increase in the dielectric constant was also observed in the long time region ($\\ge$11h) near the glass transition temperature for thin films with thickness less than 26nm. In the constant rate mode including a temporary stop at a temperature $T_a$, the memory of the aging at $T_a$ was found to be kept and then to be recalled during the subsequent heating process. In the negative temperature cycling process, a strong rejuvenation effect has been observed after the temperature shift from the initial temperature $T_1$ to the second temperature $T_2$($=T_1+\\Delta T$) when $\\Delta T\\approx -20$K. Furthermore, a full memory effect has also been observed for the temperature shift from $T_2$ to $T_1$. This suggests that the aging at $T_1$ is totally independent of that at $T_2$ for $\\Delta T\\approx -20$K. As $|\\Delta T|$ decreases, the independence of the aging between the two temperatures was found to be weaken, $i.e.,$ the effective time, which is a measure of the contribution of the aging at $T_1$ to that at $T_2$, is a decreasing function of $|\\Delta T|$ in the negative region of $\\Delta T$. As the film thickness decreases from 514nm to 26nm, the $|\\Delta T|$ dependence of the effective time was found to become much stronger. The contribution of the aging at $T_2$ to that at $T_1$ disappears more rapidly with increasing $|\\Delta T|$ in thin film geometry than in the bulk state.

Koji Fukao; Aiko Sakamoto

2004-10-23T23:59:59.000Z

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Epitaxial EuO thin films on GaAs  

SciTech Connect

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57 deg., a significant remanent magnetization, and a Curie temperature of 69 K.

Swartz, A. G.; Ciraldo, J.; Wong, J. J. I.; Li Yan; Han Wei; Lin Tao; Shi, J.; Kawakami, R. K. [Department of Physics and Astronomy, University of California, Riverside, California 92521 (United States); Mack, S.; Awschalom, D. D. [Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106 (United States)

2010-09-13T23:59:59.000Z

362

Thin film solar cell including a spatially modulated intrinsic layer  

SciTech Connect

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

1989-03-28T23:59:59.000Z

363

Method for fabricating thin films of pyrolytic carbon  

DOE Patents (OSTI)

The present invention relates to a method for fabricating ultra-thin films of pyrolytic carbon. Pyrolytic carbon is vapor deposited onto a concave surface of a heated substrate to a total uniform thickness in the range of about 0.1 to 1.0 micrometer. The carbon film on the substrate is provided with a layer of adherent polymeric resin. The resulting composite film of pyrolytic carbon and polymeric resin is then easily separated from the substrate by shrinking the polymeric resin coating with thermally induced forces.

Brassell, Gilbert W. (Lenoir City, TN); Lewis, Jr., John (Oak Ridge, TN); Weber, Gary W. (Amherst, NY)

1982-01-01T23:59:59.000Z

364

Thin-film electrochemical power cells. Final report  

SciTech Connect

Fundamental properties of research cells were correlated with the projected performance of full scale power sources, considering both battery and supercapacitor concepts. In addition to establishing the data base for modelling and performance projections, the program had the additional objective of identifying loss mechanisms and degradation reactions, especially those unique to polymer thin film cell designs. Because of the intrinsic high electrode/electrolyte interface areas, interfacial reactions must be understood. Many applications require power under extreme conditions, and low temperature performance needs to be improved.

Owens, B.B.; Smyrl, W.H.

1991-01-01T23:59:59.000Z

365

Thin Film Absorbers Based on Plasmonic Phase Resonances  

E-Print Network (OSTI)

We demonstrate an efficient double-layer light absorber by exciting plasmonic phase resonances. We show that the addition of grooves can cause mode splitting of the plasmonic waveguide cavity modes and all the new resonant modes exhibit large absorptivity greater than 90%. Some of the generated absorption peaks have wide-angle characteristics. Furthermore, we find that the proposed structure is fairly insensitive to the alignment error between different layers. The proposed plasmonic nano-structure designs may have exciting potential applications in thin film solar cells, thermal emitters, novel infrared detectors, and highly sensitive bio-sensors.

Cui, Yanxia; Xu, Jun; He, Sailing; Fang, Nicholas X

2010-01-01T23:59:59.000Z

366

Pulsed laser deposition of ITO thin films and their characteristics  

SciTech Connect

The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 Multiplication-Sign 10{sup -4} {Omega} cm has been achieved in the ITO films with content of Sn 5 at %.

Zuev, D. A., E-mail: zuewda@yandex.ru; Lotin, A. A.; Novodvorsky, O. A.; Lebedev, F. V.; Khramova, O. D. [Russian Academy of Sciences, Institute on Laser and Information Technologies (Russian Federation); Petuhov, I. A.; Putilin, Ph. N.; Shatohin, A. N.; Rumyanzeva, M. N.; Gaskov, A. M. [Moscow State University, Faculty of Chemistry (Russian Federation)

2012-03-15T23:59:59.000Z

367

Drying radioactive wastewater salts using a thin film dryer  

SciTech Connect

This paper describes the operational experience in drying brines generated at a radioactive wastewater treatment facility. The brines are composed of aqueous ammonium sulfate/sodium sulfate and aqueous sodium nitrate/sodium sulfate, The brine feeds receive pretreatment to preclude dryer bridging and fouling. The dryer products are a distillate and a powder. The dryer is a vertical thin film type consisting of a steam heated cylinder with rotor. Maintenance on the dryer has been minimal. Although many operability problems have had to be overcome, dryer performance can now be said to be highly reliable.

Scully, D.E.

1998-03-19T23:59:59.000Z

368

Thin film superconductors and process for making same  

DOE Patents (OSTI)

A process for the preparation of oxide superconductors from high-viscosity non-aqueous solution is described. Solutions of lanthanide nitrates, alkaline earth nitrates and copper nitrates in a 1:2:3 stoichiometric ratio, when added to ethylene glycol containing citric acid solutions, have been used to prepare highly viscous non-aqueous solutions of metal mixed nitrates-citrates. Thin films of these compositions are produced when a layer of the viscous solution is formed on a substrate and subjected to thermal decomposition.

Nigrey, P.J.

1988-01-21T23:59:59.000Z

369

Growth of silicon sheets for photovoltaic applications  

DOE Green Energy (OSTI)

The status of silicon sheet development for photovoltaic applications is critically reviewed. Silicon sheet growth processes are classified according to their linear growth rates. The fast growth processes, which include edge-defined film-fed growth, silicon on ceramic, dendritic-web growth, and ribbon-to-ribbon growth, are comparatively ranked subject to criteria involving growth stability, sheet productivity, impurity effects, crystallinity, and solar cell results. The status of more rapid silicon ribbon growth techniques, such as horizontal ribbon growth and melt quenching, is also reviewed. The emphasis of the discussions is on examining the viability of these sheet materials as solar cell substrates for low-cost silicon photovoltaic systems.

Surek, T.

1980-12-01T23:59:59.000Z

370

Biaxial texturing of inorganic photovoltaic thin films using low energy ion beam irradiation during growth  

SciTech Connect

We describe our efforts to control the grain boundary alignment in polycrystalline thin films of silicon by using a biaxially textured template layer of CaF{sub 2} for photovoltaic device applications. We have chosen CaF{sub 2} as a candidate material due to its close lattice match with silicon and its suitability as an ion beam assisted deposition (mAD) material. We show that the CaF{sub 2} aligns biaxially at a thickness of {approx}10 nm and, with the addition of an epitaxial CaF{sub 2} layer, has an in-plane texture of {approx}15{sup o}. Deposition of a subsequent layer of Si aligns on the template layer with an in-plane texture of 10.8{sup o}. The additional improvement of in-plane texture is similar to the behavior observed in more fully characterized IBAD materials systems. A germanium buffer layer is used to assist in the epitaxial deposition of Si on CaF{sub 2} template layers and single crystal substrates. These experiments confirm that an mAD template can be used to biaxially orient polycrystalline Si.

Groves, Jaes R [Los Alamos National Laboratory; De Paula, Raymond F [Los Alamos National Laboratory; Hayes, Garrett H [STANFORD UNIV.; Li, Joel B [STANFORD UNIV.; Hammond, Robert H [STANFORD UNIV.; Salleo, Alberto [STANFORD UNIV.; Clemens, Bruce M [STANFORD UNIV.

2010-01-01T23:59:59.000Z

371

Using Thin Films to Screen Possible Scintillator Materials  

SciTech Connect

The discovery and optimization of new scintillators has traditionally been a rather slow process due to the difficulties of single crystal growth. This paper discusses the production of polycrystalline scintillator thin films (a few microns thick) which were tested in order to determine what characterizations could be made concerning a material’s ultimate potential as a scintillator prior to pursuing crystal growth. Thin films of CaF2(Eu), CeF3, and CeCl3, all known scintillators, were produced by vapor deposition. The hygroscopic CeCl3 was coated with multiple polymer-aluminum oxide bi-layers. Emission spectra peak wavelengths and decay times agreed with single crystal values. The films were too thin to measure gamma photopeaks, but using alpha energy deposition peaks, one could compare the relative photon yield/MeV between materials. The values obtained appear to give a relevant indication of a material’s light yield potential. The technique also appears useful for quickly determining the proper dopant amount for a given material.

Milbrath, Brian D.; Caggiano, Joseph A.; Engelhard, Mark H.; Joly, Alan G.; Matson, Dean W.; Nachimuthu, Ponnusamy; Olsen, Larry C.

2009-06-30T23:59:59.000Z

372

Sputter deposition for multi-component thin films  

DOE Patents (OSTI)

Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

Krauss, Alan R. (Plainfield, IL); Auciello, Orlando (Cary, NC)

1990-01-01T23:59:59.000Z

373

Issue and challenges facing rechargeable thin film lithium batteries  

Science Conference Proceedings (OSTI)

New materials hold the key to fundamental advances in energy conversion and storage, both of which are vital in order to meet the challenge of global warming and the finite nature of fossil fuels. Nanomaterials in particular offer unique properties or combinations of properties as electrodes and electrolytes in a range of energy devices. Technological improvements in rechargeable solid-state batteries are being driven by an ever-increasing demand for portable electronic devices. Lithium batteries are the systems of choice, offering high energy density, flexible, lightweight design and longer lifespan than comparable battery technologies. We present a brief historical review of the development of lithium-based thin film rechargeable batteries highlight ongoing research strategies and discuss the challenges that remain regarding the discovery of nanomaterials as electrolytes and electrodes for lithium batteries also this article describes the possible evolution of lithium technology and evaluates the expected improvements, arising from new materials to cell technology. New active materials under investigation and electrode process improvements may allow an ultimate final energy density of more than 500 Wh/L and 200 Wh/kg, in the next 5-6 years, while maintaining sufficient power densities. A new rechargeable battery technology cannot be foreseen today that surpasses this. This report will provide key performance results for thin film batteries and highlight recent advances in their development.

Patil, Arun; Patil, Vaishali; Shin, Dong Wook; Choi, Ji-Won; Paik, Dong-Soo [Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Yoon, Seok-Jin [Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)], E-mail: sjyoon@kist.re.kr

2008-08-04T23:59:59.000Z

374

Catalyst-infiltrated supporting cathode for thin-film SOFCs  

DOE Green Energy (OSTI)

The fabrication and electrochemical performance of co-fired,LSM-SYSZ [i.e., La0.65Sr0.30MnO3 (LSM) - (Sc2O3)0.1(Y2O3)0.01(ZrO2)0.89] supported thin-film cells were examined using humidified hydrogen as a fuel. Co-firing of bi-layers and tri-layers was successful at 1250 C by optimizing the amount of carbon pore formers. A power density of a factor of 2.5 higher than that recently reported for the same type of cell at 800 C [3] was obtained for a cell with cobalt infiltration into the supporting cathode: the peak power densities were 455, 389, 285, 202, 141mW/cm2 at 800, 750, 700, 650, 600 C, respectively, and in most cases power densities at 0.7V exceeded more than 90 percent of the peak output. Increasing the cathode porosity from 43 to 53 percent improved peak power densities by as much as 1.3, shifting the diffusion limitation to high current densities. Cobalt infiltration into the support improved those by as much as a factor of 2 due to a significant reduction in non-ohmic resistance. These results demonstrate that cobalt catalyst-infiltrated LSM can be effective and low-cost supporting electrodes for reduced temperature, thin film SOFCs.

Yamahara, Keiji; Jacobson, Craig P.; Visco, Steven J.; De Jonghe,Lutgard C.

2004-04-12T23:59:59.000Z

375

Amorphous carbon thin films for optoelectric device application  

Science Conference Proceedings (OSTI)

Thin films of amorphous carbon (a-C and a-C:H) have been deposited using different carbon precursor materials such as camphor--a natural source, graphite and CH{sub 4}/H{sub 2} mixture by different deposition methods, such as ion beam sputtering, pyrolysis, pulsed laser deposition and r.f. plasma CVD. The films are subjected to various standard characterization techniques in order to tailor the required structural and opto-electrical properties for device applications. The effects of deposition parameters and annealing temperatures on the properties of carbon thin films have been investigated. Both p- and n- type of carbon films have been obtained either through controlling the deposition parameters of a particular method or by doping. Solar cells of various configurations, such as n-C/p-Si, p-C/n-Si and n-C/p-C/p-Si, have been fabricated and their photoresponse characteristics are studied. An efficiency of 1.52% has been obtained, so far, for the cell of configuration n-C/p-C/p-Si. Effects of substrate temperature on the photovoltaic properties are also outlined in brief.

Soga, T.; Jimbo, T.; Krishna, K.M.; Umeno, M.

2000-01-30T23:59:59.000Z

376

Facile synthesis of porous-structured nickel oxide thin film by pulsed laser deposition  

Science Conference Proceedings (OSTI)

Porous-structured nickel oxide (PsNiO) was obtained through the oxidization of a nickel thin film. The nickel thin film was deposited using the pulsed laser deposition (PLD) method on a nickel foil as a substrate. The results show uniform PsNiO after ...

Siamak Pilban Jahromi; Nay Ming Huang; Ahmad Kamalianfar; Hong Ngee Lim; Muhamad Rasat Muhamad; Ramin Yousefi

2012-01-01T23:59:59.000Z

377

Analytical modeling and parameter extraction of top and bottom contact structures of organic thin film transistors  

Science Conference Proceedings (OSTI)

This paper proposes a structure based model of an organic thin film transistor (OTFT) and analyzes its device physics. The analytical model is developed for the top contact structure by mapping the overlap region to the resistance (in the vertical direction) ... Keywords: Analytical modeling, Contact resistance, Organic thin film transistor, Overlap region, Parameter extraction, Top and bottom contact structure, Vertical resistance

Brijesh Kumar, B. K. Kaushik, Y. S. Negi, S. Saxena, G. D. Varma

2013-09-01T23:59:59.000Z

378

Optimization of DC reactive magnetron sputtering deposition process for efficient YSZ electrolyte thin film SOFC  

E-Print Network (OSTI)

thin film SOFC H. Hidalgo1 , A.-L. Thomann1 , T. Lecas1 , J. Vulliet2 , K. Wittmann-Teneze2 , D of 350 mW.cm-2 . Keywords: Anode-Supported SOFC, Thin films, magnetron sputtering, YSZ, electrolyte 1...) into electricity. Among the different technologies [1], solid oxide fuel cells (SOFC) exhibit a high tolerance

379

Study of lithium diffusion in RF sputtered Nickel/Vanadium mixed oxides thin films  

E-Print Network (OSTI)

Study of lithium diffusion in RF sputtered NickelÁ/Vanadium mixed oxides thin films F. Artuso a lithium insertion inside RF sputtered Ni/V mixed oxides thin films have been investigated employing, showed three steps clearly involved in the intercalation mechanism of lithium in the oxide films: (i

Artuso, Florinda

380

Thin-film Lithium Niobate Contour-mode Resonators Renyuan Wang and Sunil A. Bhave  

E-Print Network (OSTI)

Thin-film Lithium Niobate Contour-mode Resonators Renyuan Wang and Sunil A. Bhave School Micro Devices, Inc. Greensboro, North Carolina, USA Abstract--This paper presents Lithium Niobate (LN this platform, we demonstrate, on a black Y136 cut Lithium Niobate thin-film, one-port high-order width

Afshari, Ehsan

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Photopyroelectric thin?film instrumentation and impulse?response detection. Part I: A theoretical model  

Science Conference Proceedings (OSTI)

Thin?film pyroelectric effect detectors provide a simple means of measuring thermal properties of solid samples. The present work reports a time?delay theoreticalmodel of thin?film pyroelectric detection which enables the recovery of thermal diffusivity and thermal conductivity information from the impulse response of the pyroelectric system.

Joan F. Power; Andreas Mandelis

1987-01-01T23:59:59.000Z

382

High Frequency Characteristicsof NanocompositeThin Film "Supercapacitors" and their Suitability For EmbeddedDecoupling  

E-Print Network (OSTI)

High Frequency Characteristicsof NanocompositeThin Film "Supercapacitors" and their Suitability, the capacitance density would be much lower. Newer capacitor concepts such as supercapacitors can overcome and the suitability of the thin film supercapacitors for high-frequency decoupling applications will be discussed. 1

Swaminathan, Madhavan

383

Hard and elastic amorphous carbon nitride thin films studied by 13 C nuclear magnetic  

E-Print Network (OSTI)

Hard and elastic amorphous carbon nitride thin films studied by 13 C nuclear magnetic resonance bonding of hard and elastic amorphous carbon nitride (a-CNx) thin films was examined using solid-state 13 on Si 001 substrates at 300 °C. Nanoindentation tests reveal a recovery of 80%, a hardness of 5 GPa

Reilly, Anne

384

Thin-Film Active Nano-PWAS for Structural Health Monitoring , Victor Giurgiutiu1  

E-Print Network (OSTI)

Thin-Film Active Nano-PWAS for Structural Health Monitoring Bin Lin1 , Victor Giurgiutiu1 , Amar S be fabricated directly to the structural substrate using thin-film nano technologies (e.g., pulsed-laser deposition, sputtering, chemical vapor deposition, etc.) Because these novel PWAS are made up of nano layers

Giurgiutiu, Victor

385

Fully Integrated Applications of Thin Films on Low Temperature Cofired Ceramic (LTCC)  

SciTech Connect

Thin film multilayers have previously been introduced on multilayer low temperature cofired ceramic (LTCC), as well as initial thin film capacitors on LTCC. The ruggedness of a multipurpose Ti-Cu-Pt-Au stack for connectivity and RF conductivity has continued to benefit fabrication and reliability in state of-the-art modules, while the capacitors have followed the traditional Metal-Insulator-Metal (MIM) style. The full integration of thin film passives with thin film connectivity traces is presented. Certain passives, such as capacitors, require specifically tailored and separately patterned thin film (multi-)layers, including a dielectric. Different capacitance values are achieved by variation of both the insulator layer thickness and the active area of the capacitor. Other passives, such as filters, require only the conductor - a single thin film multilayer. This can be patterned from the same connectivity thin film material (Ti-Cu-Pt-Au), or a specially tailored thin film material (e.g. Ti-Cu-Au) can be deposited. Both versions are described, including process and integration details. Examples are discussed, ranging from patterning for maximum tolerances, to space and performance-optimized designs. Cross-sectional issues associated with integration are also highlighted in the discussion.

Ambrose Wolf; Ken Peterson; Matt O'Keefe; Wayne Huebner; Bill Kuhn

2012-04-19T23:59:59.000Z

386

Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices  

SciTech Connect

Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

Nastasi, Michael Anthony; Wang, Yongqiang; Fraboni, Beatrice; Cosseddu, Piero; Bonfiglio, Annalisa

2013-06-11T23:59:59.000Z

387

Phase transition on CdSe thin films by changing the volume concentration of Se  

Science Conference Proceedings (OSTI)

In this work CdSe thin films were grown by chemical bath deposition (CBD)6 onto glass substrate with approximately 2000 Ć thickness. The samples have been prepared by changing the volume concentration of the solution in the range of 5-45 ... Keywords: CdSe, thin films, chemical bath, phase transitions, semiconductors

M. Rubín; J. I. Cortez; H. Juárez; E. Rosendo; T. Díaz; G. García Salgado; I. Villaverde; R. Lozada-Morales; O. Portillo-Moreno; O. Zelaya-Ngel

2007-07-01T23:59:59.000Z

388

Effect of sputter pressure on stress evolution in Ta thin films during ...  

Science Conference Proceedings (OSTI)

Abstract Scope, Tantalum thin films can be sputtered in two different phases that have ... tantalum thin films using a range of argon sputter gas pressures from 0.3 to 2.2 Pa. ... Load drop and slip step statistics in cast aluminium and magnesium microwires ... Predicting flow curve of dual-phase steels through nanoindentation.

389

Electrochemical Behavior and Li Diffusion Study of LiCoO? Thin Film Electrodes Prepared by PLD  

E-Print Network (OSTI)

Preferred c-axis oriented LiCoO? thin films were prepared on the SiO?/Si (SOS) substrates by pulsed laser deposition (PLD). Thin film electrodes without carbon and binder are ideal samples to study the electrochemical ...

Xia, H.

390

Solar Thin Films Inc formerly American United Global Inc | Open Energy  

Open Energy Info (EERE)

Films Inc formerly American United Global Inc Films Inc formerly American United Global Inc Jump to: navigation, search Name Solar Thin Films Inc (formerly American United Global Inc) Place New York, New York Zip 10038 Sector Solar Product A US-based solar manufacturing equipment supplier. References Solar Thin Films Inc (formerly American United Global Inc)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Thin Films Inc (formerly American United Global Inc) is a company located in New York, New York . References ↑ "Solar Thin Films Inc (formerly American United Global Inc)" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Thin_Films_Inc_formerly_American_United_Global_Inc&oldid=351338

391

Fluorine Induced Twinned Crystalline SnO2 Thin Films  

Science Conference Proceedings (OSTI)

Accelerated Light Induced Degradation, ALID, for Monitoring of Defects in PV Silicon ... Silicon Solar Cells Evaluated by LBIC and Equivalent Circuit Model.

392

Thin film transistors and solar cells. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search  

SciTech Connect

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

NONE

1996-04-01T23:59:59.000Z

393

Sputter deposition and characterization of lithium cobalt oxide thin films and their applications in thin-film rechargeable lithium batteries  

DOE Green Energy (OSTI)

Li Co oxide thin films were deposited by rf magnetron sputtering of a LiCoO{sub 2} target in a 3:1 Ar/O{sub 2} mixture gas. From proton-induced gamma-ray emission analysis and Rutherford backscattering spectrometry, the average composition of these films was determined to be Li{sub 1.15}CoO{sub 2.16}. X-ray powder diffraction patterns of films annealed in air at 500-700 C were consistent with regular rhombohedral structure of crystalline LiCoO{sub 2}. Discharge curves of thin film lithium cells with amoprohous LiCoO{sub 2} showed no obvious structural transition between 4.2 and 1.5 V. Shape of discharge curves of cells with polycrystalline cathodes were consistent with a two-phase voltage plateau at {similar_to}3.9 V with a relatively large capacity and two additional smaller plateaus at higher voltages. Cells with the 700 C annealed cathodes showed a capacity loss of {similar_to} after 1000 cycles between 4.2 and 3.0 V.

Wang, B.; Bates, J.B.; Luck, C.F.; Sales, B.C.; Zuhr, R.A. [Oak Ridge National Lab., TN (United States); Robertson, J.D. [Kentucky Univ., Lexington, KY (United States). Dept. of Chemistry

1996-01-01T23:59:59.000Z

394

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network (OSTI)

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells thin film work. The most pressing current need is to determine how to extend cell life, particularly

Paris-Sud XI, Université de

395

Overview and Challenges of Thin Film Solar Electric Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

and Challenges of Thin and Challenges of Thin Film Solar Electric Technologies H.S. Ullal Presented at the World Renewable Energy Congress X and Exhibition 2008 Glasgow, Scotland, United Kingdom July 19-25, 2008 Conference Paper NREL/CP-520-43355 December 2008 NOTICE The submitted manuscript has been offered by an employee of the Alliance for Sustainable Energy, LLC (ASE), a contractor of the US Government under Contract No. DE-AC36-08-GO28308. Accordingly, the US Government and ASE retain a nonexclusive royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for US Government purposes. This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any

396

Investigation of multi-layer thin films for energy storage.  

DOE Green Energy (OSTI)

We investigate here the feasibility of increasing the energy density of thin-film capacitors by construction of a multi-layer capacitor device through ablation and redeposition of the capacitor materials using a high-power pulsed ion beam. The deposition experiments were conducted on the RHEPP-1 facility at Sandia National Laboratories. The dielectric capacitor filler material was a composition of Lead-Lanthanum-Zirconium-Titanium oxide (PLZT). The energy storage can be increased by using material of intrinsically high dielectric constant, and constructing many thin layers of this material. For successful device construction, there are a number of challenging requirements including correct stoichiometric and crystallographic composition of the deposited PLZT. This report details some success in satisfying these requirements, even though the attempt at device manufacture was unsuccessful. The conclusion that 900 C temperatures are necessary to reconstitute the deposited PLZT has implications for future manufacturing capability.

Renk, Timothy Jerome; Monson, Todd

2009-01-01T23:59:59.000Z

397

Characterization of Field Exposed Thin Film Modules: Preprint  

DOE Green Energy (OSTI)

Test arrays of thin film modules have been deployed at the Solar Energy Centre near New Delhi, India since 2002-2003. Performances of these arrays were reported by O.S. Sastry [1]. This paper reports on NREL efforts to support SEC by performing detailed characterization of selected modules from the array. Modules were selected to demonstrate both average and worst case power loss over the 8 years of outdoor exposure. The modules characterized included CdTe, CIS and three different types of a-Si. All but one of the a-Si types were glass-glass construction. None of the modules had edge seals. Detailed results of these tests are presented along with our conclusions about the causes of the power loss for each technology.

Wohlgemuth, J. H.; Sastry, O. S.; Stokes, A.; Singh, Y. K.; Kumar, M.

2012-06-01T23:59:59.000Z

398

Post-growth surface smoothing of thin films of diindenoperylene  

Science Conference Proceedings (OSTI)

We applied in situ x-ray reflectivity and ultraviolet photoelectron spectroscopy to study the impact of annealing on low temperature (200 K) deposited organic thin films of diindenoperylene (DIP) on SiO{sub 2} and indium tin oxide (ITO). At 200 K, DIP is crystalline on SiO{sub 2} and amorphous on ITO. Upon heating to room temperature, the roughness of DIP is reduced on both substrates, from 1.5 nm to 0.75 nm (SiO{sub 2}) and from 0.90 nm to 0.45 nm (ITO). The smoothing is accompanied by crystallization of the surface molecules, whereas the bulk structure of the films does not strongly reorganize.

Hinderhofer, A. [Institute for Applied Physics, University of Tuebingen, Auf der Morgenstelle 10, Tuebingen 72076 (Germany); Graduate School of Advanced Integration Science, Chiba University,1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Hosokai, T. [Department of Materials and Science, Iwate University, Ueda 4-3-5, Morioka, Iwate 0208551 (Japan); Yonezawa, K.; Kato, K.; Kera, S.; Ueno, N. [Graduate School of Advanced Integration Science, Chiba University,1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Gerlach, A.; Broch, K.; Frank, C.; Schreiber, F. [Institute for Applied Physics, University of Tuebingen, Auf der Morgenstelle 10, Tuebingen 72076 (Germany); Novak, J. [Institute for Applied Physics, University of Tuebingen, Auf der Morgenstelle 10, Tuebingen 72076 (Germany); European Synchrotron Radiation Facility (ESRF), BP 220, Grenoble 38043 (France)

2012-07-16T23:59:59.000Z

399

Ultra-high current density thin-film Si diode  

DOE Patents (OSTI)

A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

Wang; Qi (Littleton, CO)

2008-04-22T23:59:59.000Z

400

A NOVEL LOW THERMAL BUDGET THIN-FILM POLYSILICON FABRICATION PROCESS FOR LARGE-AREA, HIGH-THROUGHPUT SOLAR CELL PRODUCTION  

SciTech Connect

A novel thin-film poly-Si fabrication process has been demonstrated. This low thermal budget process transforms the single- and multi-layer amorphous silicon thin films into a poly-Si structure in one simple step over a pulsed rapid thermal annealing process with the enhancement of an ultrathin Ni layer. The complete poly-Si solar cell was fabricated in a short period of time without deteriorating the underneath glass substrate. The unique vertical crystallization process including the mechanism is discussed. Influences of the dopant type and process parameters on crystal structure will be revealed. The poly-Si film structure has been proved using TEM, XRD, Raman, and XPS methods. The poly-Si solar cell structure and the performance have been examined. In principle, the new process is potentially applicable to produce large-area thin-film poly-Si solar cells at a high throughput and low cost. A critical issue in this process is to prevent the excessive dopant diffusion during crystallization. Process parameters and the cell structure have to be optimized to achieve the production goal.

Yue Kuo

2010-08-15T23:59:59.000Z

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Effect of (Bi, La)(Fe, Zn)O{sub 3} thickness on the microstructure and multiferroic properties of BiFeO{sub 3} thin films  

Science Conference Proceedings (OSTI)

The effect of Bi{sub 0.90}La{sub 0.10}Fe{sub 0.90}Zn{sub 0.10}O{sub 3} (BLFZO) thicknesses on the microstructure and multiferroic properties of BiFeO{sub 3} (BFO) thin films was investigated, and all bilayered thin films were grown on Pt-coated silicon substrates without any buffer layers by a radio frequency sputtering. A (110) orientation is dominant in all the bilayers, and two grain growth modes are identified in these bilayers by using an atomic force microscope, where different grain growth modes significantly affect their leakage behavior. The dielectric constant ({epsilon}{sub r}) of bilayers gradually increases, and magnetic properties were deteriorated with the addition of BLFZO with a higher {epsilon}{sub r} and a weaker magnetic behavior. An enhanced ferroelectric behavior of 2P{sub r} {approx} 116.2 {mu}C/cm{sup 2} and 2E{sub c} {approx} 524 kV/cm could be observed in the BFO/BLFZO bilayered thin film with 80 nm BLFZO layer owing to a higher orientation degree of (110) and an interface coupling together with a lower leakage current density. As a result, electrical properties of BFO could be tailored by modifying the thicknesses of BLFZO.

Wu Jiagang; Xiao Dingquan; Zhu Jianguo [Department of Materials Science, Sichuan University, Chengdu 610064 (China)

2012-11-01T23:59:59.000Z

402

Surface Micromachined Flexural Plate Wave Device Integrable on Silicon  

SciTech Connect

Small, reliable chemical sensors are needed for a wide range of applications, such as weapon state-of-health monitoring, nonproliferation activities, and manufacturing emission monitoring. Significant improvements in present surface acoustic wave sensors could be achieved by developing a flexural plate-wave (FPW) architecture, in which acoustic waves are excited in a thin sensor membrane. Further enhancement of device performance could be realized by integrating a piezoelectric thin film on top of the membrane. These new FPW-piezoelectric thin film devices would improve sensitivity, reduce size, enhance ruggedness and reduce the operating frequency so that the FPW devices would be compatible with standard digital microelectronics. Development of these piezoelectric thin film // FPW devices requires integration of (1) acoustic sensor technology, (2) silicon rnicromachining techniques to fabricate thin membranes, and (3) piezoelectric thin films. Two piezoelectric thin film technologies were emphasized in this study: Pb(Zr,Ti)O{sub 3} (PZT) and AlN. PZT thin films were of sufficient quality such that the first high frequency SAW measurements on PZT thin films were measured during the course of this study. Further, reasonable ferroelectric properties were obtained from PZT films deposited on Si surface micromachined FPW device membranes. Fundamental understanding of the effect of nanodimension interfacial layers on AlN thin film domain configurations and piezoelectric response was developed. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the US Department of Energy under contract DE-AC04-94AL85000.

Clem, P.G.; Dimos, D.; Garino, T.J.; Martin, S.J.; Mitchell, M.A.; Olson, W.R.; Ruffner, J.A.; Schubert, W.K.; Tuttle, B.A.

1999-01-01T23:59:59.000Z

403

Study of a hydrogen-bombardment process for molecular cross-linking within thin films  

SciTech Connect

A low-energy hydrogen bombardment method, without using any chemical additives, has been designed for fine tuning both physical and chemical properties of molecular thin films through selectively cleaving C-H bonds and keeping other bonds intact. In the hydrogen bombardment process, carbon radicals are generated during collisions between C-H bonds and hydrogen molecules carrying {approx}10 eV kinetic energy. These carbon radicals induce cross-linking of neighboring molecular chains. In this work, we focus on the effect of hydrogen bombardment on dotriacontane (C{sub 32}H{sub 66}) thin films as growing on native SiO{sub 2} surfaces. After the hydrogen bombardment, XPS results indirectly explain that cross-linking has occurred among C{sub 32}H{sub 66} molecules, where the major chemical elements have been preserved even though the bombarded thin film is washed by organic solution such as hexane. AFM results show the height of the perpendicular phase in the thin film decreases due to the bombardment. Intriguingly, Young's modulus of the bombarded thin films can be increased up to {approx}6.5 GPa, about five times of elasticity of the virgin films. The surface roughness of the thin films can be kept as smooth as the virgin film surface after thorough bombardment. Therefore, the hydrogen bombardment method shows a great potential in the modification of morphological, mechanical, and tribological properties of organic thin films for a broad range of applications, especially in an aggressive environment.

Liu, Y.; Yang, J. [Department of Mechanical and Materials Engineering, University of Western Ontario, London, Ontario (Canada); Yang, D. Q.; Nie, H.-Y.; Lau, W. M. [Surface Science Western, University of Western Ontario, London, Ontario (Canada)

2011-02-21T23:59:59.000Z

404

Thin-film alternating current nanocalorimeter for low temperatures and high magnetic fields  

SciTech Connect

Thin-film nanocalorimeter for low temperatures and high magnetic fields is described. The calorimeter is based on a commercial microchip module (thermal conductivity vacuum gauge TCG 3880 from Xensor Integration, NL). The gauge consists of submicron silicon nitride membrane with a film-thermopile and a resistive film-heater with dimensions of 50x100 {mu}m{sup 2} located at the center of the membrane. The gauge is mounted in a thermostat filled with helium exchange gas. The method of alternating current (ac) calorimetry is applied for heat capacity measurements. The noise-floor sensitivity of the calorimeter is better than 1 nJ/K below 100 K and about 3 nJ/K at 300 K. This allows for reliable measurements to be performed on sub-microgram samples. It is proved that the method is applicable for heat capacity measurements at temperatures in the range of 5-300 K and in high magnetic fields up to 8 T. We present a theoretical analysis of the thermal processes in the gauge-sample-surrounding gas system. On this basis a calibration method has been developed. We demonstrate that the technique yields correct heat capacity for test samples and that in special cases the thermal conductivity and the magnetostriction of the sample can be measured simultaneously with the heat capacity.

Minakov, A.A.; Roy, S.B.; Bugoslavsky, Y.V.; Cohen, L.F. [Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2BZ (United Kingdom)

2005-04-01T23:59:59.000Z

405

Polycrystalline Thin Film Photovoltaics: From the Laboratory to Solar Fields (Presentation)  

SciTech Connect

The conclusions of this report are that: (1) many issues how thin-film solar cells work remain unresolved, requiring further fundamental R and D effort; (2) commercial thin-film PV module production reached 29% in 2005 in the US, indicating much more rapid growth than crystalline Si PV; (3) commercial module performance is increasing based on current knowledge, more R and D will lead to further improvement; and (4) stability of thin-film modules is acceptable ({le} 1% per year power loss) if the right manufacturing processes are used for manufacturing.

von Roedern, B.; Ullal, H.; Zweibel, K.

2006-05-01T23:59:59.000Z

406

High-field magnets using high-critical-temperature superconducting thin films  

DOE Patents (OSTI)

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field.

Mitlitsky, Fred (Livermore, CA); Hoard, Ronald W. (Livermore, CA)

1994-01-01T23:59:59.000Z

407

High-field magnets using high-critical-temperature superconducting thin films  

DOE Patents (OSTI)

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla are disclosed. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field. 4 figures.

Mitlitsky, F.; Hoard, R.W.

1994-05-10T23:59:59.000Z

408

Formation of thin-film high T/sub c/ superconductors by metalorganic deposition  

Science Conference Proceedings (OSTI)

Metalorganic deposition (MOD) is a nonvacuum method of thin-film deposition which allows easy alteration of chemical components and is compatible with thin-film processing. We report the preparation of thin-film superconductors by MOD. Rutherford backscattering spectrometry was used to determine film compositions and thicknesses. Films, approximately 500 nm thick, of YBa/sub 2/Cu/sub 4/O/sub z/ (z undetermined) were deposited on single-crystal SrTiO/sub 3/. A superconducting onset temperature of 90 K was measured with 37 K the zero resistance temperature. Scanning electron microscopy revealed grain sizes approximately 250 nm in diameter.

Hamdi, A.H.; Mantese, J.V.; Micheli, A.L.; Laugal, R.C.O.; Dungan, D.F.; Zhang, Z.H.; Padmanabhan, K.R.

1987-12-21T23:59:59.000Z

409

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof  

DOE Patents (OSTI)

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Perkins, John (Boulder, CO); Van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David (Evergreen, CO); Taylor, Matthew (Golden, CO); Neuman, George A. (Holland, MI); Luten, Henry A. (Holland, MI); Forgette, Jeffrey A. (Hudsonville, MI); Anderson, John S. (Holland, MI)

2010-07-13T23:59:59.000Z

410

Thin-film CdTe and CuInSe{sub 2} photovoltaic technologies  

DOE Green Energy (OSTI)

Total-area conversion efficiency of 15%--15.8% have been achieved for thin-film CdTe and CIS solar cells. Modules with power output of 5--53 W have been demonstrated by several groups world-wide. Critical processes and reaction pathways for achieving excellent PV devices have been eluciated. Research, development and technical issues have been identified, which could result in potential improvements in device and module performance. A 1-kW thin-film CdTe array has been installed and is being tested. Multimegawatt thin-film CdTe manufacturing plants are expected to be completed in 1-2 years.

Ullal, H.S.; Zweibel, K.; von Roedern, B.G.

1993-08-01T23:59:59.000Z

411

Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application  

DOE Patents (OSTI)

A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

Hawkins, G.A.; Clarke, J.

1975-10-31T23:59:59.000Z

412

Optical and electronic properties of Ti{sub 1-x}Nb{sub x}N thin films  

Science Conference Proceedings (OSTI)

Ti{sub 1-x}Nb{sub x}N thin films with x=0, 0.26, 0.41, 0.58 and 1 were deposited on silicon (311) substrate by RF magnetron sputtering. The dielectric functions of these films were calculated by fitting measured reflectance spectra to the Drude-Lorentz model. The measured reflectance spectra exhibits a minimum in the visible region and this feature shifts to higher energy (shorter wavelength) with increase in x. The observed behavior can be modeled as the response of four Lorentz oscillators. The real part of the dielectric function is characterized by a screened plasma energy of 2.26 eV for x=0 which increased to 2.80 eV for x=0.58 in the Ti{sub 1-x}Nb{sub x}N film.

Vasu, K.; Gopikrishnan, G. M.; Krishna, M. Ghanashyam; Padmanabhan, K. A. [School of Physics, Centre for Nanotechnology, University of Hyderabad, Hyderabad-500 046 (India); School of Physics, University of Hyderabad, Hyderabad-500 046 (India); School of Physics, Centre for Nanotechnology, University of Hyderabad, Hyderabad-500 046 (India); Centre for Nanotechnology, School of Engineering Sciences and Technology, University of Hyderabad, Hyderabad-500 046 (India)

2012-06-05T23:59:59.000Z

413

Laser microfabrication and testing of silicon carbide diaphragms for MEMS applications.  

E-Print Network (OSTI)

??Laser microfabrication of silicon carbide for MEMS applications was explored. 3C-SiC and 6H-SiC were laser micromachined using various lasers. 3C-SiC thin films were patterned using… (more)

Pecholt, Benjamin

2009-01-01T23:59:59.000Z

414

Laser microfabrication and testing of silicon carbide diaphragms for MEMS applications.  

E-Print Network (OSTI)

?? Laser microfabrication of silicon carbide for MEMS applications was explored. 3C-SiC and 6H-SiC were laser micromachined using various lasers. 3C-SiC thin films were patterned… (more)

Pecholt, Benjamin Francis

2009-01-01T23:59:59.000Z

415

Rigorous extraction tunability of Si-integrated Ba{sub 0.3}Sr{sub 0.7}TiO{sub 3} thin film up to 60 GHz  

Science Conference Proceedings (OSTI)

400-nm-thick Ba{sub 0.3}Sr{sub 0.7}TiO{sub 3} thin films are deposited on high resistivity silicon by in situ radio frequency magnetron sputtering. Coplanar waveguides with 1 mum slot width are designed, with accurate knowledge frequency losses behavior, to determine ferroelectric thin-films properties up to 60 GHz. Permittivity, loss tangent, and tunability are extracted through measurements and home made finite element analysis. Tunability of 33% and 29%, with 30 V maximum applied voltage (electric field of 300 kV/cm), are measured at 5 GHz and 60 GHz, respectively, while the dielectric losses evolve from 0.5% to 5%. A brief highlight is proposed about tunable silicon integrated quarter wavelength transformer potentialities for impedance matching.

Ponchel, Freddy; Midy, Jean; Gueguan, Guillaume [ST Microelectronics, SAS 16, rue Pierre et Marie Curie, 37071 Tours (France); Legier, Jean-Fancois; Soyer, Caroline; Remiens, Denis; Lasri, Tuami [Institute of Electronics, Microelectronics, and Nanotechnology (IEMN), UMR CNRS 8520, Universite des Sciences et Technologies de Lille, 59652 Villeneuve d'Ascq Cedex (France)

2010-06-21T23:59:59.000Z

416

Structural Studies of Al:ZnO Powders and Thin Films | Stanford Synchrotron  

NLE Websites -- All DOE Office Websites (Extended Search)

Structural Studies of Al:ZnO Powders and Thin Films Structural Studies of Al:ZnO Powders and Thin Films Monday, June 18, 2012 - 2:00pm SSRL Main Conference Room 137-322 Dr. Bridget Ingham, Associate Investigator, MacDiarmid Institute for Advanced Materials & Nanotechnology Al-doped ZnO (Al:ZnO) is a promising transparent conducting oxide. We have used complementary synchrotron and laboratory techniques to study the incorporation of Al within the ZnO lattice, and measure its effect on the crystallinity of thin films prepared by sol-gel techniques, with an aim to understand how these properties affect the film conductivity. I will present recent results from Al:ZnO powders and thin films, prepared with varying Al concentrations and calcination temperatures. Solid state 27Al NMR and ex situ X-ray diffraction (XRD) were performed on Al:ZnO

417

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Program Manager, Solar Program Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be using technology pioneered at the Department of Energy's National Renewable Energy Lab (NREL). The record-breaking Cadmium-Telluride (CdTe) thin film photovoltaic technology GE has chosen for its solar panels was originally developed more than a decade ago by a team of scientists led by NREL's Xuanzhi Wu, and

418

Cu(In,Ga)Se2 Thin-Film Concentrator Solar Cells: Preprint  

DOE Green Energy (OSTI)

Presented at the 2001 NCPV Program Review Meeting: CIGS cells were designed for operation under concentrated sunlight. This is first report of polycrystalline thin-film cell with efficiency>20%.

Ward, J.; Ramanathan, K.; Hasoon, F.; Coutts, T.; Keane, J.; Moriarty, T; Noufi, R.

2001-10-01T23:59:59.000Z

419

Photovoltaic Single-Crystalline, Thin-Film Cell Basics | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Single-Crystalline, Thin-Film Cell Basics Single-Crystalline, Thin-Film Cell Basics Photovoltaic Single-Crystalline, Thin-Film Cell Basics August 20, 2013 - 2:50pm Addthis Single-crystalline thin films are made from gallium arsenide (GaAs), a compound semiconductor that is a mixture of gallium and arsenic. Gallium arsenide (GaAs) is a compound semiconductor, a mixture of gallium and arsenic. Gallium is a byproduct of the smelting of other metals, notably aluminum and zinc, and it is rarer than gold. Arsenic is not rare, but it is poisonous. Gallium arsenide has been developed for use in solar cells at about the same time that it has been developed for light-emitting diodes, lasers, and other electronic devices that use light. GaAs solar cells offer several benefits: The GaAs bandgap is 1.43 eV-nearly ideal for single-junction solar

420

Structure and Effects of Extended Defects in Polycrystalline Si Thin Films  

DOE Green Energy (OSTI)

The structure and effects of extended defects in rapid deposited polycrystalline Si thin films were studied using a combination of high-resolution transmission electron microscopy and first-principles total energy calculations.

Yan, Y.; Al-Jassim, M. M.; Wang, T. H.; Ciszek, T. F.

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

A direct thin-film path towards low-cost large-area III-V ...  

A direct thin-film path towards low-cost large-area III-V ... depending on the surface energy constraints of the nucleation ... scaling all times in ...

422

Integration of pentacene-based thin film transistors via photolithography for low and high voltage applications  

E-Print Network (OSTI)

An organic thin film transistor (OTFT) technology platform has been developed for flexible integrated circuits applications. OTFT performance is tuned by engineering the dielectric constant of the gate insulator and the ...

Smith, Melissa Alyson

2012-01-01T23:59:59.000Z

423

Micro/nano devices fabricated from Cu-Hf thin films  

DOE Patents (OSTI)

An all-metal microdevice or nanodevice such as an atomic force microscope probe is manufactured from a copper-hafnium alloy thin film having an x-ray amorphous microstructure.

Luber, Erik J; Ophus, Colin; Mitlin, David; Olsen, Brian; Harrower, Christopher; Radmilovi, Velimir

2013-06-04T23:59:59.000Z

424

Matrix-assisted pulsed laser thin film deposition by using Nd: YAG laser  

Science Conference Proceedings (OSTI)

Matrix-Assisted Pulsed Laser Evaporation (MAPLE) is a deposition technique, developed from Pulsed Laser Deposition (PLD) especially well suited for producing organic/polymeric thin films, which can take advantage from using Nd:YAG laser. Depending on ...

Francesco Bloisi; Mario Barra; Antonio Cassinese; Luciano Rosario Maria Vicari

2012-01-01T23:59:59.000Z

425

Efficient Föster energy transfer : from phosphorescent organic molecules to J-aggregate thin film  

E-Print Network (OSTI)

This thesis demonstrates the first ever use of Forster resonance energy transfer (FRET) to increase the quantum efficiency of a electrically pumped J-aggregate light emitting device (JLED). J-aggregate thin films are highly ...

Shirasaki, Yasuhiro

2008-01-01T23:59:59.000Z

426

Defect engineering of cuprous oxide thin-films for photovoltaic applications  

E-Print Network (OSTI)

Thin-film solar cells are promising for renewable-energy applications due to their low material usage and inexpensive manufacturing potential, making them compatible with terawatts-level deployment. Cuprous oxide (Cu?O) ...

Lee, Yun Seog

2013-01-01T23:59:59.000Z

427

Technological assessment of light-trapping technology for thin-film Si solar cell  

E-Print Network (OSTI)

The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was analyzed from the technology, market, and ...

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

428

Study on the Humidity Susceptibility of Thin-Film CIGS Absorber  

SciTech Connect

The report summarizes the research on the susceptibility of a thermally co-evaporated CuInGaSe2 (CIGS) thin-film absorber to humidity and its consequence on composition, morphology, electrical and electronic properties, and device efficiency.

Pern, F. J.; Egaas, B.; To, B.; Jiang, C. S.; Li, J. V.; Glynn, S.; DeHart, C.

2010-01-01T23:59:59.000Z

429

Earth abundant materials for high efficiency heterojunction thin film solar cells  

E-Print Network (OSTI)

We investigate earth abundant materials for thin-film solar cells that can meet tens of terawatts level deployment potential. Candidate materials are identified by combinatorial search, large-scale electronic structure ...

Buonassisi, Tonio

430

Interaction of stress and magnetic properties in patterned copper-nickel-copper thin films  

E-Print Network (OSTI)

In recent years, the epitaxial Cu/Ni/Cu thin film system has been extensively studied, due to its wide range of perpendicular magnetization. It has proved to be a model system to explore the interactions of strain, surface ...

Friend, Elizabeth, Ph. D. Massachusetts Institute of Technology

2007-01-01T23:59:59.000Z

431

Femtosecond transient absorption studies in cadmium selenide nanocrystal thin films prepared by chemical bath deposition method  

Science Conference Proceedings (OSTI)

Dynamics of photo-excited carrier relaxation processes in cadmium selenide nanocrystal thin films prepared by chemical bath deposition method have been studied by nondegenerate femtosecond transient pump-probe spectroscopy. The carriers were generated ...

M. C. Rath; J. A. Mondal; D. K. Palit; T. Mukherjee; H. N. Ghosh

2007-01-01T23:59:59.000Z

432

Method for making surfactant-templated, high-porosity thin films  

DOE Patents (OSTI)

An evaporation-induced self-assembly method to prepare a surfactant-templated thin film by mixing a silica sol, a surfactant, and a hydrophobic polymer and then evaporating a portion of the solvent during coating onto a substrate and then heating to form a liquid-phase, thin film material with a porosity greater than approximately 50 percent. The high porosity thin films can have dielectric constants less than 2 to be suitable for applications requiring low-dielectric constants. An interstitial compound can be added to the mixture, with the interstitial compound either covalently bonded to the pores or physically entrapped within the porous structure. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Brinker, C. Jeffrey (Albuquerque, NM); Lu, Yunfeng (San Jose, CA); Fan, Hongyou (Albuquerque, NM)

2001-01-01T23:59:59.000Z

433

Stability Issues of Transparent Conducting Oxides (TCOs) for Thin-Film Photovoltaics (Presentation)  

DOE Green Energy (OSTI)

Study of stability issues of TCOs for thin-film PV, including degradation of optical, electrical, and structural properties of TCOs in damp heat and required encapsulation to prevent moisture egress.

Pern, J.

2008-12-01T23:59:59.000Z

434

Solid state thin film battery having a high temperature lithium alloy anode  

SciTech Connect

An improved rechargeable thin-film lithium battery involves the provision of a higher melting temperature lithium anode. Lithium is alloyed with a suitable solute element to elevate the melting point of the anode to withstand moderately elevated temperatures.

Hobson, David O. (Oak Ridge, TN)

1998-01-01T23:59:59.000Z

435

Chemical vapor deposition of conjugated polymeric thin films for photonic and electronic applications  

E-Print Network (OSTI)

(cont.) Conjugated polymers have delocalized electrons along the backbone, facilitating electrical conductivity. As thin films, they are integral to organic semiconductor devices emerging in the marketplace, such as flexible ...

Lock, John P

2005-01-01T23:59:59.000Z

436

Engineering broadband and anisotropic photoluminescence emission from rare earth doped tellurite thin film photonic crystals  

E-Print Network (OSTI)

Broadband and anisotropic light emission from rare-earth doped tellurite thin films is demonstrated using Er[superscript 3+]-TeO[subscript 2] photonic crystals (PhCs). By adjusting the PhC parameters, photoluminescent light ...

Vanhoutte, Michiel

437

Design and construction of instruments for exciton diffusion characterization and for patterning of thin films  

E-Print Network (OSTI)

In this thesis the instruments explore two main aspects of organic optoelectronic devices. One instrument characterizes exciton diffusion and the other patterns organic thin films. Exciton diffusion characteristics are ...

Mendoza, Hiroshi Antonio

2012-01-01T23:59:59.000Z

438

Role of Polycrystalline Thin-Film PV Technologies in Competitive PV Module Markets: Preprint  

DOE Green Energy (OSTI)

This paper discusses the developments in thin-film PV technologies and provides an outlook on future commercial module efficiencies achievable based on today's knowledge about champion cell performance.

von Roedern, B.; Ullal, H. S.

2008-05-01T23:59:59.000Z

439

Chemical vapor deposition thin films as biopassivation coatings and directly patternable dielectrics  

E-Print Network (OSTI)

Organosilicon thin films deposited by pulsed plasma-enhanced chemical vapor deposition (PPECVD) and hot-filament chemical vapor deposition (HFCVD) were investigated as potential biopassivation coatings for neural probes. ...

Pryce Lewis, Hilton G. (Hilton Gavin), 1973-

2001-01-01T23:59:59.000Z

440

Analysis of potential applications for the templated dewetting of metal thin films  

E-Print Network (OSTI)

Thin films have a high surface-to-volume ratio and are therefore usually morphologically unstable. They tend to reduce their surface energy through transport of mass by diffusion. As a result, they decay into a collection ...

Frantzeskakis, Emmanouil

2005-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Photodarkening Effect in a-(GaSe){sub 90}Ag{sub 10} Thin Films  

Science Conference Proceedings (OSTI)

The present paper reports the laser induced changes on the optical properties of a-(GaSe){sub 90}Ag{sub 10} thin films prepared by thermal evaporation technique. Thin film samples, on glass substrate, were exposed to laser light of wavelength {lambda} = 532 nm for different exposure times, t{sub E}(t{sub E}=0{sub s}, 500 s, 1000 s and 3000 s). Optical parameters like absorption coefficient and optical energy gap of as- deposited thin film and their laser induced changes were studied at three different times of exposure. The value of absorption coefficient of these thin film increases on exposing the film to laser irradiation. The optical absorption edge shift to lower photon energy i.e. the Photodarkening (PD) effect occurs. The results have been explained on the basis of structural changes that are occurring after the laser irradiation.

Gupta, Shikha; Mustafa, F. I.; Saini, G. S. S.; Goyal, Navdeep; Tripathi, S. K. [Department of Physics, Panjab University, Chandigarh-160 014 (India)

2011-12-12T23:59:59.000Z

442

Tax Credits Give Thin-Film Solar a Big Boost | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Solar a Big Boost October 18, 2010 - 2:00pm Addthis MiaSol will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act...

443

Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)  

DOE Green Energy (OSTI)

Capabilities fact sheet for the National Center for Photovoltaics: Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide that includes scope, core competencies and capabilities, and contact/web information.

Not Available

2011-06-01T23:59:59.000Z

444

Triode electron bombardment evaporation source for ultrahigh vacuum thin film deposition  

Science Conference Proceedings (OSTI)

A new electron bombardment evaporation source for ultrahigh vacuum (UHV) thin film deposition is presented. It is based on an original electrodes configuration (modeled on that of a vacuum triode) featuring

R. Verucchi; S. Nannarone

2000-01-01T23:59:59.000Z

445

Role of point defects/defect complexes in silicon device processing. Book of abstracts, fourth workshop  

DOE Green Energy (OSTI)

The 41 abstracts are arranged into 6 sessions: impurities and defects in commercial substrates: their sources, effects on material yield, and material quality; impurity gettering in silicon: limits and manufacturability of impurity gettering and in silicon solar cells; impurity/defect passivation; new concepts in silicon growth: improved initial quality and thin films; and silicon solar cell design opportunities.

Not Available

1994-06-01T23:59:59.000Z

446

Apparatus and method for the determination of grain size in thin films  

DOE Patents (OSTI)

A method for the determination of grain size in a thin film sample comprising the steps of measuring first and second changes in the optical response of the thin film, comparing the first and second changes to find the attenuation of a propagating disturbance in the film and associating the attenuation of the disturbance to the grain size of the film. The second change in optical response is time delayed from the first change in optical response.

Maris, Humphrey J (Barrington, RI)

2000-01-01T23:59:59.000Z

447

Apparatus and method for the determination of grain size in thin films  

DOE Patents (OSTI)

A method for the determination of grain size in a thin film sample comprising the steps of measuring first and second changes in the optical response of the thin film, comparing the first and second changes to find the attenuation of a propagating disturbance in the film and associating the attenuation of the disturbance to the grain size of the film. The second change in optical response is time delayed from the first change in optical response.

Maris, Humphrey J (Barrington, RI)

2001-01-01T23:59:59.000Z

448

Development of a Thin Film Sensor for Detecting Initiation of Stress Corrosion Cracks in Stainless Steels  

Science Conference Proceedings (OSTI)

The study of initiation of intergranular stress corrosion cracking (IGSCC) has been hindered by lack of techniques to detect small cracks ranging in depth from sub-micron to several microns. The present investigation's main objective is to develop a thin film sample suitable for detecting and studying initiation of IGSCC in sensitized austenitic stainless steel. Two approaches are being investigated to produce thin films of stainless steel: pulse laser deposition (PLD) of ultrathin films (20-150 nm) usin...

2002-12-11T23:59:59.000Z

449

Free-Space Time-Domain Method for Measuring Thin Film Dielectric Properties  

DOE Patents (OSTI)

A non-contact method for determining the index of refraction or dielectric constant of a thin film on a substrate at a desired frequency in the GHz to THz range having a corresponding wavelength larger than the thickness of the thin film (which may be only a few microns). The method comprises impinging the desired-frequency beam in free space upon the thin film on the substrate and measuring the measured phase change and the measured field reflectance from the reflected beam for a plurality of incident angles over a range of angles that includes the Brewster's angle for the thin film. The index of refraction for the thin film is determined by applying Fresnel equations to iteratively calculate a calculated phase change and a calculated field reflectance at each of the plurality of incident angles, and selecting the index of refraction that provides the best mathematical curve fit with both the dataset of measured phase changes and the dataset of measured field reflectances for each incident angle. The dielectric constant for the thin film can be calculated as the index of refraction squared.

Li, Ming; Zhang, Xi-Cheng; Cho, Gyu Cheon

2000-05-02T23:59:59.000Z

450

Bi-Sr-Ca-Cu-O thin films grown by flash evaporation and pulsed laser deposition  

E-Print Network (OSTI)

Bismuth-Strontium-Calcium-Copper-Oxide (BSCCO) compounds are an important family of compounds that have one of the highest transition temperatures among all high-temperature superconductors. The compound is known to exist in three distinct phases, commonly referred to as the 2201, 2212 and 2223 phases. Of these three phases, the 2212 and 2223 phases are the most important, as their transition temperature is higher than the boiling point of liquid nitrogen. It is desirable to produce the compound in thin film form, as the bulk samples are normally polycrystalline. This thesis compares thin films produced by two techniques for depositing BSCCO in order to understand the effect of various processing parameters on the final quality of the thin films. Thin films were grown by flash evaporation at Texas A&M University, and by pulsed laser deposition (PLD) at the University of Wollongong, Australia. The latter of these techniques is widely used for growing thin films of various compounds. Single-phase 2212 films were grown on a MgO substrate using the pulsed laser deposition technique from commercially available 2212 powder. The effect of annealing on the thin films was also studied.

Ganapathy Subramanian, Santhana

2003-12-01T23:59:59.000Z

451

Method for bonding thin film thermocouples to ceramics  

DOE Patents (OSTI)

A method is provided for adhering a thin film metal thermocouple to a ceramic substrate used in an environment up to 700 degrees Centigrade, such as at a cylinder of an internal combustion engine. The method includes the steps of: depositing a thin layer of a reactive metal on a clean ceramic substrate; and depositing thin layers of platinum and a platinum-10% rhodium alloy forming the respective legs of the thermocouple on the reactive metal layer. The reactive metal layer serves as a bond coat between the thin noble metal thermocouple layers and the ceramic substrate. The thin layers of noble metal are in the range of 1-4 micrometers thick. Preferably, the ceramic substrate is selected from the group consisting of alumina and partially stabilized zirconia. Preferably, the thin layer of reactive metal is in the range of 0.015-0.030 micrometers (15-30 nanometers) thick. The preferred reactive metal is chromium. Other reactive metals may be titanium or zirconium. The thin layer of reactive metal may be deposited by sputtering in ultra high purity argon in a vacuum of approximately 2 milliTorr (0.3 Pascals).

Kreider, Kenneth G. (Potomac, MD)

1993-01-01T23:59:59.000Z

452

Supercritical fluid molecular spray thin films and fine powders  

DOE Patents (OSTI)

Solid films are deposited, or fine powders formed, by dissolving a solid material into a supercritical fluid solution at an elevated pressure and then rapidly expanding the solution through a short orifice into a region of relatively low pressure. This produces a molecular spray which is directed against a substrate to deposit a solid thin film thereon, or discharged into a collection chamber to collect a fine powder. The solvent is vaporized and pumped away. Solution pressure is varied to determine, together with flow rate, the rate of deposition and to control in part whether a film or powder is produced and the granularity of each. Solution temperature is varied in relation to formation of a two-phase system during expansion to control porosity of the film or powder. A wide variety of film textures and powder shapes are produced of both organic and inorganic compounds. Films are produced with regular textural feature dimensions of 1.0-2.0 .mu.m down to a range of 0.01 to 0.1 .mu.m. Powders are formed in very narrow size distributions, with average sizes in the range of 0.02 to 5 .mu.m.

Smith, Richard D. (Richland, WA)

1988-01-01T23:59:59.000Z

453

Hydrogen adsorption in thin films of Prussian blue analogue  

DOE Green Energy (OSTI)

Quartz crystal microbalance with dissipation (QCM-D) measurement was used to investigate the kinetics of the molecular hydrogen adsorption into thin films of prussian blue analogues - Cu{sub 3}[Co(CN){sub 6}]{sub 2} at ambient conditions. Although the equilibrium adsorption seems to be independent of the thickness, the adsorption rate substantially decreases with the thickness of the films. In addition, the reversibility of H{sub 2} adsorption into the Cu{sub 3}[Co(CN){sub 6}]{sub 2} films was investigated. The results indicate that the Cu{sub 3}[Co(CN){sub 6}]{sub 2} maily interacts with H{sub 2} molecules physically. The highest H{sub 2} uptake by the Cu{sub 3}[Co(CN){sub 6}]{sub 2} films is obtained when the gas phase is stagnant inside the testing cell. However, the unusual high H{sub 2} uptake obtained from the QCM-D measurement makes us question how reliable this analytic methodology is.

Yang, Dali [Los Alamos National Laboratory; Ding, Vivian [Los Alamos National Laboratory; Luo, Junhua [Los Alamos National Laboratory; Currier, Robert P [Los Alamos National Laboratory; Obrey, Steve [Los Alamos National Laboratory; Zhao, Yusheng [Los Alamos National Laboratory

2008-01-01T23:59:59.000Z

454

2010 Thin Film & Small Scale Mechanical Behavior Gordon Research Conference  

SciTech Connect

Over the past decades, it has been well established that the mechanical behavior of materials changes when they are confined geometrically at least in one dimension to small scale. It is the aim of the 2010 Gordon Conference on 'Thin Film and Small Scale Mechanical Behavior' to discuss cutting-edge research on elastic, plastic and time-dependent deformation as well as degradation mechanisms like fracture, fatigue and wear at small scales. As in the past, the conference will benefit from contributions from fundamental studies of physical mechanisms linked to material science and engineering reaching towards application in modern applications ranging from optical and microelectronic devices and nano- or micro-electrical mechanical systems to devices for energy production and storage. The conference will feature entirely new testing methodologies and in situ measurements as well as recent progress in atomistic and micromechanical modeling. Particularly, emerging topics in the area of energy conversion and storage, such as material for batteries will be highlighted. The study of small-scale mechanical phenomena in systems related to energy production, conversion or storage offer an enticing opportunity to materials scientists, who can provide new insight and investigate these phenomena with methods that have not previously been exploited.

Dr. Thomas Balk

2010-07-30T23:59:59.000Z

455

Thin-film fiber optic hydrogen and temperature sensor system  

DOE Patents (OSTI)

The invention discloses a sensor probe device for monitoring of hydrogen gas concentrations and temperatures by the same sensor probe. The sensor probe is constructed using thin-film deposition methods for the placement of a multitude of layers of materials sensitive to hydrogen concentrations and temperature on the end of a light transparent lens located within the sensor probe. The end of the lens within the sensor probe contains a lens containing a layer of hydrogen permeable material which excludes other reactive gases, a layer of reflective metal material that forms a metal hydride upon absorbing hydrogen, and a layer of semi-conducting solid that is transparent above a temperature dependent minimum wavelength for temperature detection. The three layers of materials are located at the distal end of the lens located within the sensor probe. The lens focuses light generated by broad-band light generator and connected by fiber-optics to the sensor probe, onto a reflective metal material layer, which passes through the semi-conducting solid layer, onto two optical fibers located at the base of the sensor probe. The reflected light is transmitted over fiber optic cables to a spectrometer and system controller. The absence of electrical signals and electrical wires in the sensor probe provides for an elimination of the potential for spark sources when monitoring in hydrogen rich environments, and provides a sensor free from electrical interferences. 3 figs.

Nave, S.E.

1998-07-21T23:59:59.000Z

456

Adhesion and Thin-Film Module Reliability: Preprint  

DOE Green Energy (OSTI)

Among the infrequently measured but essential properties for thin-film (T-F) module reliability are the interlayer adhesion and cohesion within a layer. These can be cell contact layers to glass, contact layers to the semiconductor, encapsulant to cell, glass, or backsheet, etc. We use an Instron mechanical testing unit to measure peel strengths at 90{sup o} or 180{sup o} and, in some cases, a scratch and tape pull test to evaluate inter-cell layer adhesion strengths. We present peel strength data for test specimens laminated from the three T-F technologies, before and after damp heat, and in one instance at elevated temperatures. On laminated T-F cell samples, failure can occur uniformly at any one of the many interfaces, or non-uniformly across the peel area at more than one interface. Some peel strengths are << 1 N/mm. This is far below the normal Instron mechanical testing unit Instron mechanical testing unit; glass interface values of >10 N/mm. We measure a wide range of adhesion strengths and suggest that adhesion measured under higher temperature and relative humidity conditions is more relevant for module reliability.

McMahon, T. J.; Jorgensen, G. J.

2006-05-01T23:59:59.000Z

457

Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium-tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells  

Science Conference Proceedings (OSTI)

In this article, Ga-doped Al-zinc-oxide (GAZO)/titanium-doped indium-tin-oxide (ITIO) bi-layer films were deposited onto glass substrates by direct current (dc) magnetron sputtering. The bottom ITIO film, with a thickness of 200 nm, was sputtered onto the glass substrate. The ITIO film was post-annealed at 350 deg. C for 10-120 min as a seed layer. The effect of post-annealing conditions on the morphologies, electrical, and optical properties of ITIO films was investigated. A GAZO layer with a thickness of 1200 nm was continuously sputtered onto the ITIO bottom layer. The results show that the properties of the GAZO/ITIO films were strongly dependent on the post-annealed conditions. The spectral haze (T{sub diffuse}/T{sub total}) of the GAZO/ITIO bi-layer films increases upon increasing the post-annealing time. The haze and resistivity of the GAZO/ITIO bi-layer films were improved with the post-annealed process. After optimizing the deposition and annealing parameters, the GAZO/ITIO bi-layer film has an average transmittance of 83.20% at the 400-800 nm wavelengths, a maximum haze of 16%, and the lowest resistivity of 1.04 x 10{sup -3}{Omega} cm. Finally, the GAZO/ITIO bi-layer films, as a front electrode for silicon-based thin film solar cells, obtained a maximum efficiency of 7.10%. These encouraging experimental results have potential applications in GAZO/ITIO bi-layer film deposition by in-line sputtering without the wet-etching process and enable the production of highly efficient, low-cost thin film solar cells.

Wang, Chao-Chun; Wuu, Dong-Sing; Lin, Yang-Shih; Lien, Shui-Yang; Huang, Yung-Chuan; Liu, Chueh-Yang; Chen, Chia-Fu; Nautiyal, Asheesh; Lee, Shuo-Jen [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Department of Materials Science and Engineering, MingDao University, Changhua 52345, Taiwan (China); Department of Mechanical Engineering, Yuan Ze University, Taoyuan 320, Taiwan (China)

2011-11-15T23:59:59.000Z

458

Optimization of Fabrication Process for a PDMS-SOG-Silicon Based PCR Micro Chip through System Identification Techniques  

Science Conference Proceedings (OSTI)

A polymerase chain reaction (PCR) micro-chip with integrated thin film heaters and temperature detectors has been realized on a silicon-SOG-PDMS (polydi( methyl) siloxane) platform. Accurate temperature sensing and control is important for a PCR reaction. ...

Venumadhav Korampally; Shantanu Bhattacharya; Yuanfang Gao; Sheila A. Grant; Steven B. Kleiboeker; Keshab Gangopadhyay; Jinglu Tan; Shubhra Gangopadhyay

2006-06-01T23:59:59.000Z

459

Thin Film Si Bottom Cells for Tandem Device Structures: Final Technical Report, 15 December 2003 - 15 October 2007  

DOE Green Energy (OSTI)

GIT and IEC developed thin-film Si bottom cell and showed that deposition of top cell in tandem device did not reduce bottom cell performance.

Yelundur, V.; Hegedus, S.; Rohatgi, A.; Birkmire, R.

2008-11-01T23:59:59.000Z

460

Thin film nanoporous silica and graphene based biofuel cells (iBFCs) for low-power implantable medical device applications.  

E-Print Network (OSTI)

??This thesis describes the fabrication and characterization of an inorganic catalyst based glucose Biofuel cell using nanoporous (mesoporous) silica thin-film as a functional membrane. The… (more)

Sharma, Tushar

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ribbon silicon thin-film" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Tax Credits Give Thin-Film Solar a Big Boost | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Tax Credits Give Thin-Film Solar a Big Boost Tax Credits Give Thin-Film Solar a Big Boost Tax Credits Give Thin-Film Solar a Big Boost October 18, 2010 - 2:00pm Addthis MiaSolé will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.| Photo courtesy of MiaSolé MiaSolé will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.| Photo courtesy of MiaSolé Lorelei Laird Writer, Energy Empowers What are the key facts? MiaSolé adding more than ten times its current manufacturing capacity Company expects to double or triple its workforce with expansion Expansion is funded by $101 million in Recovery Act tax credit For MiaSolé, a relative newcomer to the solar energy market, 2010 has been

462

Cu-Ga-Se Thin Films Prepared by a Combination of Electrodeposition and Evaporation Techniques  

Science Conference Proceedings (OSTI)

Cu-Ga-Se thin films were prepared using a combination of electrodeposition and evaporation techniques. A Cu-Se/Mo/glass precursor thin film was first prepared by galvanostatic electrodeposition. On top of this film three different thicknesses of Ga were deposited by evaporation. The Cu-Ga-Se thin films were formed by annealing the Ga/Cu-Se/Mo/glass thin film configuration in a tubular chamber with Se powder, at different temperatures. Thin films were characterized by X-ray diffraction (XRD), photocurrent spectroscopy (PS), inductively coupled plasma (ICP) analysis, and scanning electron microscopy (SEM). The detailed analysis from X-ray reveals that after annealing at 550 C the CuGaSe{sub 2} phase is formed when the thickness of Ga is 0.25 {mu}m, however at 0.5 {mu}m and 1.0 {mu}m Ga the formation of CuGa{sub 3}Se{sub 5} and CuGa{sub 5}Se{sub 8} phases is observed respectively. Band gap values were obtained using photocurrent spectroscopy.

Fernandez, A. M.; Turner, J. A.

2012-04-01T23:59:59.000Z

463

NIST Blue Ribbon Commission on Management and Safety ? ...  

Science Conference Proceedings (OSTI)

NIST Blue Ribbon Commission on Management and Safety – II. The NIST Blue Ribbon Commission on Management and ...

2012-08-27T23:59:59.000Z

464

NIST Blue Ribbon Commission on Management and Safety ...  

Science Conference Proceedings (OSTI)

... See NIST Blue Ribbon Commission on Management and Safety – II. NIST Blue Ribbon Commission on Management and Safety. ...

2010-10-05T23:59:59.000Z

465

COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces  

NLE Websites -- All DOE Office Websites (Extended Search)

COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces Coherent Bragg rod analyses (COBRA) experiments using synchrotron x-rays at Argonne's Advanced Photon Source (MHATT-CAT and PNC-CAT beamlines) directly revealed the sub-angstrom atomic interaction of epitaxial films with substrates. Information on how atoms in the adjoining layers of the film and substrate rearrange to mimic each other may lead to improvements in semiconductor manufacturing and the development of novel heterostructure materials, such as multilayer ferroelectrics, magnetic nanostructures and thin film superconductors. COBRA electron density map of a Gd2O3 film on a gallium arsenide substrate. The peaks correspond to folded Gd atomic positions parallel to the plane of the substrate.

466

Optical Properties of MEH-PPV Thin Films Containing ZnO Nanoparticles  

Science Conference Proceedings (OSTI)

Thin films of poly [2-methoxy-5(2'-ethyl hexyloxy)-phenylene vinylene](MEH-PPV) containing different weight percent of ZnO nanoparticles were deposited by spin coating from THF solutions and their optical properties were investigated. Optical characterization of the nanocomposite thin films were performed by Ultraviolet-Visible Spectrophotometer (UV-Vis) and Photoluminescence Spectrometer while the thickness of the thin films was measured by using Surface Profiler. The UV-Vis absorption spectra of MEH-PPV: ZnO films showed a small red shift as compared with pure MEH-PPV. Similarly, a small red shift was found in PL emission spectra with increasing the content of ZnO nanoparticles.

Zayana, N. Y. [NANO-SciTech Center (NST), Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam (Malaysia); Shariffudin, S. S. [NANO- ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam (Malaysia); Jumali, N. S.; Shaameri, Z.; Hamzah, A. S. [Organic Synthesis Research Laboratory, Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam (Malaysia); Rusop, M. [NANO-SciTech Center (NST), Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam (Malaysia); NANO- ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam (Malaysia)

2011-05-25T23:59:59.000Z

467

Method for etching thin films of niobium and niobium-containing compounds for preparing superconductive circuits  

DOE Green Energy (OSTI)

An improved method of preparing thin film superconducting electrical circuits of niobium or niobium compounds in which a thin film of the niobium or niobium compound is applied to a nonconductive substrate, and covered with a layer of photosensitive material. The sensitive material is in turn covered with a circuit pattern exposed and developed to form a mask of the circuit in photoresistive material on the surface of the film. The unmasked excess niobium film is removed by contacting the substrate with an aqueous etching solution of nitric acid, sulfuric acid and hydrogen fluoride, which will rapidly etch the niobium compound without undercutting the photoresist. A modification of the etching solution will permit thin films to be lifted from the substrate without further etching.

Kampwirth, Robert T. (Darien, IL); Schuller, Ivan K. (Woodridge, IL); Falco, Charles M. (Woodridge, IL)

1981-01-01T23:59:59.000Z

468

Laser-assisted sol-gel growth and characteristics of ZnO thin films  

SciTech Connect

ZnO thin films were grown on Si(100) substrates by a sol-gel method assisted by laser beam irradiation with a 325 nm He-Cd laser. In contrast to conventional sol-gel ZnO thin films, the surface morphology of the laser-assisted sol-gel thin films was much smoother, and the residual stress in the films was relaxed by laser irradiation. The luminescent properties of the films were also enhanced by laser irradiation, especially, by irradiation during the deposition and post-heat treatment stages. The incident laser beam is thought to play several roles, such as annihilating defects by accelerating crystallization during heat treatment, enhancing the surface migration of atoms and molecules, and relaxing the ZnO matrix structure during crystallization.

Kim, Min Su; Kim, Soaram [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749 (Korea, Republic of); Leem, Jae-Young [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749 (Korea, Republic of); Department of Nano Engineering, Inje University, Gimhae 621-749 (Korea, Republic of)

2012-06-18T23:59:59.000Z

469

Enhanced Efficiency of Light-Trapping Nanoantenna Arrays for Thin Film Solar Cells  

E-Print Network (OSTI)

We suggest a novel concept of efficient light-trapping structures for thin-film solar cells based on arrays of planar nanoantennas operating far from plasmonic resonances. The operation principle of our structures relies on the excitation of chessboard-like collective modes of the nanoantenna arrays with the field localized between the neighboring metal elements. We demonstrated theoretically substantial enhancement of solar-cell short-circuit current by the designed light-trapping structure in the whole spectrum range of the solar-cell operation compared to conventional structures employing anti-reflecting coating. Our approach provides a general background for a design of different types of efficient broadband light-trapping structures for thin-film solar-cell technologically compatible with large-area thin-film fabrication techniques.

Simovski, Constantin R; Voroshilov, Pavel M; Guzhva, Michael E; Belov, Pavel A; Kivshar, Yuri S

2013-01-01T23:59:59.000Z

470

Titanium and Magnesium Co-Alloyed Hematite Thin Films for Photoelectrochemical Water Splitting  

DOE Green Energy (OSTI)

Using a combination of density functional theory calculation and materials synthesis and characterization we examine the properties of charge-compensated Ti and Mg co-alloyed hematite thin films for the application of photoelectrochemical (PEC) water splitting. We find that the charge-compensated co-alloying results in the following effects: (1) It enhances the solubility of Mg and Ti, which leads to reduced electron effective mass and therefore increased electron mobility; (2) It tunes the carrier density and therefore allows the optimization of electrical conductivity; and (3) It reduces the density of charged defects and therefore reduces carrier recombination. As a result, the Ti and Mg co-alloyed hematite thin films exhibit improved water oxidation photocurrent magnitudes as compared to pure hematite thin films. Our results suggest that charge-compensated co-alloying is a plausible approach for engineering hematite for the application of PEC water splitting.

Tang, H.; Yin, W. J.; Matin, M. A.; Wang, H.; Deutsch, T.; Al-Jassim, M. M.; Turner, J. A.; Yan, Y.

2012-04-01T23:59:59.000Z

471

Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors  

DOE Patents (OSTI)

A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN (thin film network) manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure. All three types of resistors are temperature-stable and laser-trimmable for precise definition of resistance values.

Norwood, D.P.

1986-08-07T23:59:59.000Z

472

Evaporation system and method for gas jet deposition of thin film materials  

DOE Patents (OSTI)

A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.

Schmitt, Jerome J. (New Haven, CT); Halpern, Bret L. (Bethany, CT)

1994-01-01T23:59:59.000Z

473

Development of recrystallization and thin-film solar cell processes. Final report, October 1, 1977-September 30, 1978  

DOE Green Energy (OSTI)

The program had two thrusts: (1) based upon electron-beam thermal treatment of deposited silicon films, to increase crystallite sizes to the range thought to be useful for polycrystalline, thin-film cell fabrication; and (2) to explore the feasibility of applying the directed-energy technologies of ion implantation and pulsed electron beam activation, previously developed for silicon cell fabrication, to junction formation in III-V compounds. The culmination of the recrystallization effort was demonstrating grains broader than the 30-..mu..m film in which they were regrown. This proof of principle was accomplished by means of two-step thermal process that consisted of large-area pulsed electron beam melting followed by small-area heating in a moving DC electron beam. The pulsed beam treatment reduced the three-dimensional disorder of the initial submicrometer crystallite silicon film to one characterized by submicrometercross-section, full-film-thickness, columnar crystallites. The swept beam treatment allowed coalesence of these columnar crystallites, through directional freezing, in the melt path of the beam. It is believed that this demonstration is the first evidence of greater-than-film thickness recrystallization of useful thickness silicon films other than by extended heat treatment at greater than 1350/sup 0/C. The results of the studies on junction formation in III-V materials, while not so dramatic, have shown that low-energy ion implantation is a potentially viable alternative to liquid or vapor phase epitaxy in the fabrication of GaAs solar cells. Further, the technical feasibility of pulsed electron beam activation of ion implanted junctions in GaAs has been demonstrated. Lastly, the concept of forming front-layer windows of GaP and AlGaAs on GaAs by high-dose ion implantation has been shown to be technically feasible.

Solomon, S.J.

1979-05-01T23:59:59.000Z

474

Melt dumping in string stabilized ribbon growth  

DOE Patents (OSTI)

A method and apparatus for stabilizing the edge positions of a ribbon drawn from a melt includes the use of wettable strings drawn in parallel up through the melt surface, the ribbon being grown between the strings. A furnace and various features of the crucible used therein permit continuous automatic growth of flat ribbons without close temperature control or the need for visual inspection.

Sachs, Emanuel M. (42 Old Middlesex Rd., Belmont, MA 02178)

1986-12-09T23:59:59.000Z

475

Structure and Electrocatalysis of Sputtered RuPt Thin-film Electrodes  

DOE Green Energy (OSTI)

The structural and electrochemical properties of RuPt thin-film electrodes fabricated by RF magnetron sputtering have been investigated. Grazing incidence X-ray diffraction data show a transition from a face-centered-cubic (fcc) to hexagonal-cubic-packed (hcp) structure as Ru percentage increases. The transition occurs gradually between 32-58% Ru, which is significantly different from the bulk RuPt phase diagram. The catalytic activity of the thin-film electrodes for methanol oxidation shows a broad peak near 40-60% Ru, consistent with previous reports. The relationship between catalytic activity and film structure is discussed and contrasted with previous investigations.

Kim, T-W

2005-02-02T23:59:59.000Z

476

Dynamics of gravity driven three-dimensional thin films on hydrophilic-hydrophobic patterned substrates  

E-Print Network (OSTI)

We investigate numerically the dynamics of unstable gravity driven three-dimensional thin liquid films on hydrophilic-hydrophobic patterned substrates of longitudinal stripes and checkerboard arrangements. The thin film can be guided preferentially on hydrophilic longitudinal stripes, while fingers develop on adjacent hydrophobic stripes if their width is large enough. On checkerboard patterns, the film fingering occurs on hydrophobic domains, while lateral spreading is favoured on hydrophilic domains, providing a mechanism to tune the growth rate of the film. By means of kinematical arguments, we quantitatively predict the growth rate of the contact line on checkerboard arrangements, providing a first step towards potential techniques that control thin film growth in experimental setups.

Rodrigo Ledesma-Aguilar; Aurora Hernandez-Machado; Ignacio Pagonabarraga

2010-01-20T23:59:59.000Z

477

Cathode limited charge transport and performance of thin-film rechargeable lithium batteries  

DOE Green Energy (OSTI)

Several types of thin-film rechargeable batteries based on lithium metal anodes and amorphous V{sub 2}O{sub 5} (aV{sub 2}O{sub 5}), LiMn{sub 2}O{sub 4}, and LiCoO{sub 2} cathodes have been investigated in this laboratory. In all cases, the current density of these cells is limited by lithium ion transport in the cathodes. This paper, discusses sources of this impedance in Li-aV{sub 2}O{sub 5} and Li-LiMn{sub 2}O{sub 4} thin-film cells and their effect on cell performance.

Bates, J.B.; Hart, F.X.; Lubben, D.; Kwak, B.S.; van Zomeren, A.

1994-11-01T23:59:59.000Z

478

Investigations of CuInSe sub 2 thin films and contacts  

DOE Green Energy (OSTI)

This report describes research into electrical contacts for copper indium diselenide (CuInSe{sub 2}) polycrystalline thin films used for solar cell applications. Molybdenum contacts have historically been the most promising for heterojunction solar cells. This program studied contact stability by investigating thermally induced bilayer reactions between molybdenum and copper, indium, and selenium. Because selenization is widely used to fabricate CuInSe{sub 2} thin films for photovoltaic cells, a second part of the program investigated how the morphologies, phases, and reactions of pre-selenization Cu-In structures are affected by the deposition process and heat treatments. 7 refs., 6 figs.

Nicolet, M.A. (California Inst. of Tech., Pasadena, CA (United States))

1991-10-01T23:59:59.000Z

479

Scanning tunneling microscopic studies of SiO2 thin film supported metal nano-clusters  

E-Print Network (OSTI)

This dissertation is focused on understanding heterogeneous metal catalysts supported on oxides using a model catalyst system of SiO2 thin film supported metal nano-clusters. The primary technique applied to this study is scanning tunneling microscopy (STM). The most important constituent of this model catalyst system is the SiO2 thin film, as it must be thin and homogeneous enough to apply electron or ion based surface science techniques as well as STM. Ultra-thin SiO2 films were successfully synthesized on a Mo(112) single crystal. The electronic and geometric structure of the SiO2 thin film was investigated by STM combined with LEED, Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS). The relationship between defects on the SiO2 thin film and the nucleation and growth of metal nano-clusters was also investigated. By monitoring morphology changes during thermal annealing, it was found that the metal-support interaction is strongly dependent on the type of metal as well as on the defect density of the SiO2 thin film. Especially, it was found that oxygen vacancies and Si impurities play an important role in the formation of Pd-silicide. By substituting Ti atoms into the SiO2 thin film network, an atomically mixed TiO2-SiO2 thin film was synthesized. Furthermore, these Ti atoms play a role as heterogeneous defects, resulting in the creation of nucleation sites for Au nano-clusters. A marked increase in Au cluster density due to Ti defects was observed in STM. A TiO2-SiO2 thin film consisting of atomic Ti as well as TiOx islands was also synthesized by using higher amounts of Ti (17 %). More importantly, this oxide surface was found to have sinter resistant properties for Au nano-clusters, which are desirable in order to make highly active Au nano-clusters more stable under reaction conditions.

Min, Byoung Koun

2004-08-01T23:59:59.000Z

480

Improved Transparent Conducting Oxides Boost Performance of Thin-Film Solar Cells (Fact Sheet)  

DOE Green Energy (OSTI)

Today?s thin-film solar cells could not function without transparent conducting oxides (TCOs). TCOs act as a window, both protecting the cell and allowing light to pass through to the cell?s active layers. Until recently, TCOs were seen as a necessary, but static, layer of a thin-film photovoltaic (PV) cell. But a group of researchers at the National Renewable Energy Laboratory (NREL) has identified a pathway to producing improved TCO films that demonstrate higher infrared transparency. To do so, they have modified the TCOs in ways that did not seem possible a few years ago.

Not Available

2011-02-01T23:59:59.000Z