National Library of Energy BETA

Sample records for quaternary borate deposits

  1. Quaternary Borate Deposits As A Geothermal Exploration Tool In...

    Open Energy Info (EERE)

    white in color and are difficult to distinguish visually from more common chloride and sulfate evaporites. For exploration for borates to be practical, it is essential to have an...

  2. Remote Detection of Quaternary Borate Deposits with ASTER Satellite...

    Open Energy Info (EERE)

    Deposits with ASTER Satellite Imagery as a Geothermal Exploration Tool Abstract In the Great Basin of the western United States, geothermal fluids are sometimes associated with...

  3. Supramolecular assembly of borate with quaternary ammonium: Crystal structure and tunable luminescent properties

    SciTech Connect (OSTI)

    Liang, Jie; Wang, Yong-gang; Wang, Ying-xia; Liao, Fu-hui; Lin, Jian-hua

    2013-04-15

    A new borate [C{sub 6}H{sub 16}N][B{sub 5}O{sub 6}(OH){sub 4}] (1) is synthesized hydrothermally by the reaction of isopropyltrimethylammonium hydroxide with boric acid. It crystallizes in the triclinic space group P-1 with the parameters a=9.1578(10) , b=9.372(9) , c=9.9812(10) , ?=66.508(2), ?=74.751(2), ?=81.893(2). The [B{sub 5}O{sub 6}(OH){sub 4}]{sup ?} anions are interlinked via hydrogen bonding forming a 3D supramolecular network containing large cavities, where reside the (CH{sub 3}){sub 3}(i-C{sub 3}H{sub 7}) N{sup +} cations. This borate shows tunable luminescent properties with temperature, heating-treatment, exciting-light, and solvents. The fluorescent intensity of 1 enhances 6-fold with decreasing the temperature from 25 K to 78 K. By treatment under different temperatures, the luminescence of 1 shifted from blue to white and the sample treated at 230 C emits bright white light to naked eyes. The hybrid borate can disperse in different solvents, and shows a red-shifted and intense emission in polar solvents. - Graphical abstract: The new quaternary ammonium borate [C{sub 6}H{sub 17}N][B{sub 5}O{sub 6}(OH){sub 4}] contains a 3D supramolecular network formed by hydrogen bond linked [B{sub 5}O{sub 6}(OH){sub 4}]{sup ?} anions and shows tunable luminescent properties with temperature, excitation light, and solvents. Highlights: ? A novel quaternary ammonium borate was synthesized. ? It possesses a supramolecular network fomed by H-bonded [B{sub 5}O{sub 6}(OH){sub 4}]{sup ?} anions. ? This borate shows tunable luminescent properties with temperature, heating treatment, excitation light, and solvents.

  4. Late Quaternary paleodune deposits in Abu Dhabi Emirate, UAF: Paleoclimatic implications

    SciTech Connect (OSTI)

    Brouwers, E.M.; Bown, T.M. (Geological Survey, Denver, CO (United States)); Hadley, D.G. (Geological Survey, Reston, VA (United States))

    1993-04-01

    Remnants of late Quaternary paleodunes are exposed near the coast of the Arabian Gulf and in large inland playas and interdunal areas in central and western Abu Dhabi Emirate over a distance of >45 km normal to the coast. Paleodunes occur south of Madinat Zayed (lat. 23[degree]35 N), which marks the northern limit of a modern dune field that grades into the mega-dune sand sea of the ar Rub al Khali, Saudi Arabia. Coastal paleodunes are composed of weakly cemented millolid foraminifers, ooids, and rounded biogenic grains, whereas inland and southward the paleodunes show a progressive increase in the proportion of eolian quartz sand. The paleodunes exhibit large-scale trough foresets in remnant exposures 0.5 to 10 m thick, indicating paleowind directions from 65[degree] to 184[degree] (dominantly southeast transport). Scattered paleoplaya remnants provide paleodune scale. Paleoplaya deposits form buttes 30--50 m high. If coeval with the Paleodunes, large-scale paleodune fields are implied (100+ m high), comparable to star dunes and sand mountains at the northwestern edge of the ar Rub al Khali. Based on U-Th isotopic analyses, the carbonate paleodune sands are >160ka and probably >250ka. The carbonate source was a shallow, nearly dry Arabian Gulf at a time when large areas were exposed during a low sea-level stand. Paleowind direction indicates that Pleistocene prevailing winds were northwesterly, the direction of the dominant (winter shamal) wind today. The geographic extend and implied magnitude of the paleodunes suggest large-scale eolian transport of carbonate sand during the Pleistocene disiccation, and admixed quartz sand identifies a youthful stage of contemporaneous evolution of the ar Rub al Khali. Wave-eroded paleodunes probably floor much of the present-day Gulf and extend beneath the modern dunes and sand mountains.

  5. Quaternary depositional history of Providenciales and West Caicos, Turks and Caicos Islands, British West Indies

    SciTech Connect (OSTI)

    Fouke, B.W.; Glenister, B.F.; Ressmeyer, P.F.; Prezbindowski, D.R.

    1985-01-01

    The Turks and Caicos Islands represent the SE limit of emergent portions of the Bahamian Platform. Providenciales and West Caicos are low-lying islands, composed of Quaternary marine and eolian carbonates, that lie near the NW margin of the Caicos Bank. Highest elevations of marine skeletal-peletal grainstones on Providenciales are 6m above present s.l.; reefs associated with marine grainstones on West Caicos are 3-4m above s.l., and allowing for growth in several meters water depth support interpretation of maximum s.l. as +6m. Marine sediments are dated as approximately 50,000 C14 Years B.P. This suggests correlation with the mid-Wisconsin s.l. maximum and implies tectonic instability. Eolian dunes achieve an elevation of 48 m on Providenciales, where they are differentiated into five systems based on geomorphology and grain composition. Oolites, now generated exclusively in the narrow swash-zone, predominate on the Bank side whereas coated pellets and skeletal grains characterize calcarenites formed in the seaward reef tract. Fall in s.l. to the late Wisconsin minimum (17,000 years, perhaps -120m) generated successively lower arcs of dunes as carbonate productivity decreased, and resulted in subaerial diagenesis as the entire Bank emerged. Spectacular karst formation during the late Wisconsin as well as earlier s.l. lows provided conduits that allow restricted marine faunas to flourish in inland lakes and sink holes.

  6. Borate Autocausticizing | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Borate Autocausticizing Borate Autocausticizing New Technology Increases Energy Efficiency of Kraft Chemical Recovery Process and Causticizing Boron-based autocausticizing is a new, cost-effective technology to recover kraft pulping chemicals. Conceptually, the technology can be used to supply part or all of the sodium hydroxide requirements of the kraft process, supplementing or replacing the lime cycle. Because the de-carbonating reactions take place directly in the recovery boiler, instead of

  7. Method of recycling lithium borate to lithium borohydride through methyl borate

    DOE Patents [OSTI]

    Filby, Evan E.

    1977-01-01

    This invention provides a method for the recycling of lithium borate to lithium borohydride which can be reacted with water to generate hydrogen for utilization as a fuel. The lithium borate by-product of the hydrogen generation reaction is reacted with hydrogen chloride and water to produce boric acid and lithium chloride. The boric acid and lithium chloride are converted to lithium borohydride through a methyl borate intermediate to complete the recycle scheme.

  8. Passive safety injection system using borated water

    DOE Patents [OSTI]

    Conway, Lawrence E.; Schulz, Terry L.

    1993-01-01

    A passive safety injection system relies on differences in water density to induce natural circulatory flow patterns which help maintain prescribed concentrations of boric acid in borated water, and prevents boron from accumulating in the reactor vessel and possibly preventing heat transfer.

  9. Hot Pot Detail - Evidence of Quaternary Faulting

    SciTech Connect (OSTI)

    Lane, Michael

    2013-06-27

    Compilation of published data, field observations and photo interpretation relevant to Quaternary faulting at Hot Pot.

  10. Hot Pot Detail - Evidence of Quaternary Faulting

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Lane, Michael

    Compilation of published data, field observations and photo interpretation relevant to Quaternary faulting at Hot Pot.

  11. Method of recycling lithium borate to lithium borohydride through diborane

    DOE Patents [OSTI]

    Filby, Evan E.

    1976-01-01

    This invention provides a method for the recycling of lithium borate to lithium borohydride which can be reacted with water to generate hydrogen for utilization as a fuel. The lithium borate by-product of the hydrogen generation reaction is reacted with hydrogen chloride and water to produce boric acid and lithium chloride. The boric acid and lithium chloride are converted to lithium borohydride through a diborane intermediate to complete the recycle scheme.

  12. Electrochemical Corrosion Testing of Borated Stainless Steel Alloys

    SciTech Connect (OSTI)

    lister, tedd e; Mizia, Ronald E

    2007-05-01

    The Department of Energy Office of Civilian Radioactive Waste Management has specified borated stainless steel manufactured to the requirements of ASTM A 887-89, Grade A, UNS S30464, to be the material used for the fabrication of the fuel basket internals of the preliminary transportation, aging, and disposal canister system preliminary design. The long-term corrosion resistance performance of this class of borated materials must be verified when exposed to expected YMP repository conditions after a waste package breach. Electrochemical corrosion tests were performed on crevice corrosion coupons of Type 304 B4 and Type 304 B5 borated stainless steels exposed to single postulated in-package chemistry at 60C. The results show low corrosion rates for the test period

  13. CADMIUM-RARE EARTH BORATE GLASS AS REACTOR CONTROL MATERIAL

    DOE Patents [OSTI]

    Ploetz, G.L.; Ray, W.E.

    1958-11-01

    A reactor control rod fabricated from a cadmiumrare earth-borate glass is presented. The rare earth component of this glass is selected from among those rare earths having large neutron capture cross sections, such as samarium, gadolinium or europium. Partlcles of this glass are then dispersed in a metal matrix by standard powder metallurgy techniques.

  14. Synthesis and studies on microhardness of alkali zinc borate glasses

    SciTech Connect (OSTI)

    Subhashini, Bhattacharya, Soumalya Shashikala, H. D. Udayashankar, N. K.

    2014-04-24

    The mixed alkali effect on zinc borate glasses have been reported. The glass systems of nominal composition 10Zn+xLi{sub 2}O+yNa{sub 2}O+80B{sub 2}O{sub 3} (x = y = 0, 5, 10, 15 mol%) were prepared using standard melt quenching method. The structural, physical and mechanical properties of the samples have been studied using X-ray diffraction(XRD), density measurement and Vickers hardness measurement, respectively. A consistent increase in the density was observed, which explains the role of the modifiers (Li{sub 2}O and Na{sub 2}O) in the network modification of borate structure. The molar volume is decreasing linearly with the alkali concentration, which is attributed to the conversion of tetrahedral boron (BO{sub 4/2}){sup −} into (BO{sub 3/2}){sup −}. The microhardness studies reveals the anisotropy nature of the material. It further confirms that the samples belong to hard glass category.

  15. Ytterbium-doped borate fluoride laser crystals and lasers

    DOE Patents [OSTI]

    Schaffers, K.I.; DeLoach, L.D.; Payne, S.A.; Keszler, D.A.

    1997-10-14

    A new class of solid state laser crystals and lasers are formed from Yb-doped borate fluoride host crystals. The general formula for the host crystals is MM{prime}(BO{sub 3})F, where M, M{prime} are monovalent, divalent aria trivalent metal cations. A particular embodiment of the invention is Yb-doped BaCaBO{sub 3}F (Yb:BCBF). BCBF and some of the related derivative crystals are capable of nonlinear frequency conversion, whereby the fundamental of the laser is converted to a longer or shorter wavelength. In this way, these new crystals can simultaneously serve as self-frequency doubling crystals and laser materials within the laser resonator. 6 figs.

  16. Ytterbium-doped borate fluoride laser crystals and lasers

    DOE Patents [OSTI]

    Schaffers, Kathleen I.; DeLoach, Laura D.; Payne, Stephen A.; Keszler, Douglas A.

    1997-01-01

    A new class of solid state laser crystals and lasers are formed from Yb-doped borate fluoride host crystals. The general formula for the host crystals is MM'(BO.sub.3)F, where M, M' are monovalent, divalent aria trivalent metal cations. A particular embodiment of the invention is Yb-doped BaCaBO.sub.3 F (Yb:BCBF). BCBF and some of the related derivative crystals are capable of nonlinear frequency conversion, whereby the fundamental of the laser is converted to a longer or shorter wavelength. In this way, these new crystals can simultaneously serve as self-frequency doubling crystals and laser materials within the laser resonator.

  17. Quaternary tectonic movements in the Argentine Puna, 24/sup 0/ to 27/sup 0/ s latitude

    SciTech Connect (OSTI)

    Strecker, M.R.; Alonso, R.; Rivelli, F.; Mon, R.

    1985-01-01

    The Puna of NW Argentina, one of the highest plateaus in the world, is the southern continuation of the Andean Altiplano geomorphic province of Peru and Bolivia. The region is not seismically active and reports of neotectonic movements are scarce. However, the areas of Salar de los Pastos Grandes, Salar del Hombre Muerto and Sierra Calalaste clearly have experienced Quaternary tectonic movements. At Salar de los Pastos Grandes, early Pleistocene lake sediments are offset by reverse faulting. At Salar del Hombre Muerto, Quaternary pyroclastic and debris-flow deposits are unconformable over sediments 5.86 m.y. old that were folded during the Pliocene-Pleistocene Diaguita deformation. Within the Quaternary sediments two separate deformational phases with reverse faulting and shallow thrusting are recognized. The timing of movement is well defined since the deformed strata are covered by a basalt flow 0.75 m.y. old. The flow in turn is affected by normal faulting. Similar normal faults associated with basalt flows were found at Sierra Calalaste. These observations are in accord with pronounced extensional movements and basaltic volcanism at the Calama-Olacapato-Toro Lineament (0.2 m.y. old flows) and might document the Quaternary transition from a compressive to an extensional tectonic regime in the southern Puna.

  18. Fusion welding of a modern borated stainless steel

    SciTech Connect (OSTI)

    Robino, C.V.; Cieslak, M.J.

    1997-01-01

    Experiments designed to assess the fabrication and service weldability of 304B4A borated stainless steel were conducted. Welding procedures and parameters for manual gas tungsten arc (GTA) welding, autogenous electron beam (EB) welding and filler-added EB welding were developed and found to be similar to those for austenitic stainless steels. Following the procedure development, four test welds were produced and evaluated by microstructural analysis and Charpy impact testing. Further samples were used for determination of the postweld heat treatment (PWHT) response of the welds. The fusion zone structure of welds in this alloy consists of primary austenite dendrites with an interdendritic eutectic-like austenite/boride constituent. Welds also show an appreciable partially molten zone that consists of the austenite/boride eutectic surrounding unmelted austenite islands. The microstructure of the EB welds was substantially finer than that of the GTA welds, and boride coarsening was not observed in the solid state heat-affected zone (HAZ) of either weld type. The impact toughness of as-welded samples was found to be relatively poor, averaging less than 10 J for both GTA and EB welds. For fusion zone notched GTA and EB samples and centerline notched EB samples, fracture generally occurred along the boundary between the partially molten and solid-state regions of the HAZ. The results of the PWHT study were very encouraging, with typical values of the impact energy for HAZ notched samples approaching 40 J, or twice the minimum code-acceptable value.

  19. Geological History of Lake Lahontan, a Quaternary Lake of Northwestern...

    Open Energy Info (EERE)

    a Quaternary Lake of Northwestern Nevada Abstract Abstract unavailable. Author Israel C. Russell Organization U.S. Geological Survey Published U.S. Government Printing...

  20. Giant landslide deposits in northwest Argentina

    SciTech Connect (OSTI)

    Fauque, L.; Strecker, M.R.; Bloom, A.L.

    1985-01-01

    Giant Quaternary landslide deposits occur along mountain fronts in the structural transition zone between the high-angle reverse-fault-bounded Sierras Pampeanas and the low-angle thrust belt of the Sierras Subandinas. There are two modes of occurrence: (1) chaotic masses without distinct geometry, and (2) masses with distinct lobate geometry similar to glacial moraines. Type (1) deposits occur where the moving rock mass followed a narrow valley and blocked the drainage. Many of these caused subsequent formation of lakes and changed the sedimentation processes on pediments at the mountain fronts. In type (2) deposits, lateral and frontal ridges are up to 10 m higher than the interior parts; in some places pressure ridges within the lobes are well preserved. Type (2) deposits show reverse grading and were deposited on relatively smooth pediments or alluvial fans. The lobate geometry strongly suggests that type (2) deposits are a product of flowage and are debris stream or sturzstrom deposits (sense of Heim, 1932 and Hsu, 1975). All investigated deposits occur in areas of demonstrated Quaternary faulting and are interpreted as the result of tectonic movements, although structural inhomogeneities in the source area may have been a significant factor for some of the landslides. No datable materials have yet been found associated with the deposits.

  1. General and Localized corrosion of Austenitic and Borated Stainless Steels in Simulated Concentrated Ground Waters

    SciTech Connect (OSTI)

    D. Fix; J. Estill; L. Wong; R. Rebak

    2004-05-28

    Boron containing stainless steels are used in the nuclear industry for applications such as spent fuel storage, control rods and shielding. It was of interest to compare the corrosion resistance of three borated stainless steels with standard austenitic alloy materials such as type 304 and 316 stainless steels. Tests were conducted in three simulated concentrated ground waters at 90 C. Results show that the borated stainless were less resistant to corrosion than the witness austenitic materials. An acidic concentrated ground water was more aggressive than an alkaline concentrated ground water.

  2. Tetrakis(1-imidazolyl) borate (BIM4) based zwitterionic and related molecules used as electron injection layers

    DOE Patents [OSTI]

    Li, Huaping; Xu, Yunhua; Bazan, Guillermo C

    2013-02-05

    Tetrakis(1-imidazolyl)borate (BIm4) based zwitterionic and/or related molecules for the fabrication of PLEDs is provided. Device performances with these materials approaches that of devices with Ba/Al cathodes for which the cathode contact is ohmic. Methods of producing such materials, and electron injection layers and devices containing these materials are also provided.

  3. Synthesis and study on the luminescence properties of cadmium borate phosphors

    SciTech Connect (OSTI)

    Annalakshmi, O.; Jose, M.T.; Venkatraman, B.; Amarendra, G.

    2014-02-01

    Highlights: Cadmium borate synthesized by solid state sintering technique. Neutron sensitivity of the material ten times that of TLD-600. Gamma sensitivity is found to be twice that of TLD-100. Gamma response is linear from 0.1 to 10{sup 3} mGy. - Abstract: Cadmium borate compound prepared through wet chemical reaction from the starting chemicals followed by high temperature solid state synthesis below the melting point to get the final TL phosphor powder. Phase purity and bond details of cadmium borate crystals are characterized using X-ray diffraction technique and infrared spectroscopy. Feasibility of these materials for radiation dosimetry applications was studied after gamma and neutron irradiation. Gamma irradiation of undoped phosphors show a single peak around 185 C whereas doping with gadolinium and silver, new more intense peak observed at 290 C. Irradiation to thermal neutrons revealed single peak around 170 C for all the phosphors. TL emission spectra and photoluminescence (PL) studies were also carried out on the phosphors. These borate materials are found to be highly sensitive to neutrons and hence can be used for neutron detection. Neutron sensitivity of the material is about ten times that of TLD-600.

  4. Synthesis, Crystal and Electronic Structure of the Quaternary Magnetic

    Office of Scientific and Technical Information (OSTI)

    EuTAl4Si2 (T = Rh and Ir) Compounds (Journal Article) | SciTech Connect Synthesis, Crystal and Electronic Structure of the Quaternary Magnetic EuTAl4Si2 (T = Rh and Ir) Compounds Citation Details In-Document Search Title: Synthesis, Crystal and Electronic Structure of the Quaternary Magnetic EuTAl4Si2 (T = Rh and Ir) Compounds Single crystals of the quaternary europium compounds EuRhAl4Si2 and EuIrAl4Si2 were synthesized by using the Al-Si binary eutectic as a flux. The structure of the two

  5. Transition metal complexes of oxazolinylboranes and cyclopentadienyl-bis(oxazolinyl)borates: Catalysts for asymmetric olefin hydroamination and acceptorless alcohol decarbonylation

    SciTech Connect (OSTI)

    Manna, Kuntal [Ames Laboratory

    2012-12-17

    The research presented and discussed in this dissertation involves the synthesis of transition metal complexes of oxazolinylboranes and cyclopentadienyl-bis(oxazolinyl)borates, and their application in catalytic enantioselective olefin hydroamination and acceptorless alcohol decarbonylation. Neutral oxazolinylboranes are excellent synthetic intermediates for preparing new borate ligands and also developing organometallic complexes. Achiral and optically active bis(oxazolinyl)phenylboranes are synthesized by reaction of 2-lithio-2-oxazolide and 0.50 equiv of dichlorophenylborane. These bis(oxazolinyl)phenylboranes are oligomeric species in solid state resulting from the coordination of an oxazoline to the boron center of another borane monomer. The treatment of chiral bis(oxazolinyl)phenylboranes with sodium cyclopentadienide provide optically active cyclopentadienyl-bis(oxazolinyl)borates H[PhB(C{sub 5}H{sub 5})(Ox{sup R}){sub 2}] [Ox{sup R} = Ox{sup 4S-iPr,Me2}, Ox{sup 4R-iPr,Me2}, Ox{sup 4S-tBu]}. These optically active proligands react with an equivalent of M(NMe{sub 2}){sub 4} (M = Ti, Zr, Hf) to afford corresponding cyclopentadienyl-bis(oxazolinyl)borato group 4 complexes {PhB(C{sub 5}H{sub 4})(Ox{sup R}){sub 2}}M(NMe{sub 2}){sub 2} in high yields. These group 4 compounds catalyze cyclization of aminoalkenes at room temperature or below, providing pyrrolidine, piperidine, and azepane with enantiomeric excesses up to 99%. Our mechanistic investigations suggest a non-insertive mechanism involving concerted C?N/C?H bond formation in the turnover limiting step of the catalytic cycle. Among cyclopentadienyl-bis(oxazolinyl)borato group 4 catalysts, the zirconium complex {PhB(C{sub 5}H{sub 4})(Ox{sup 4S-iPr,Me2}){sub 2}}Zr(NMe{sub 2}){sub 2} ({S-2}Zr(NMe{sub 2}){sub 2}) displays highest activity and enantioselectivity. Interestingly, {S-2}Zr(NMe{sub 2}){sub 2} also desymmetrizes olefin moieties of achiral non-conjugated aminodienes and aminodiynes during cyclization. The cyclization of aminodienes catalyzed by {S-2}Zr(NMe{sub 2}){sub 2} affords diastereomeric mixture of cis and trans cylic amines with high diasteromeric ratios and excellent enantiomeric excesses. Similarly, the desymmetrization of alkyne moieties in {S-2}Zr(NMe{sub 2}){sub 2}-catalyzed cyclization of aminodiynes provides corresponding cyclic imines bearing quaternary stereocenters with enantiomeric excesses up to 93%. These stereoselective desymmetrization reactions are significantly affected by concentration of the substrate, temperature, and the presence of a noncyclizable primary amine. In addition, both the diastereomeric ratios and enantiomeric excesses of the products are markedly enhanced by N-deuteration of the substrates. Notably, the cationic zirconium-monoamide complex [{S-2}Zr(NMe{sub 2})][B(C{sub 6}F{sub 5}){sub 4}] obtained from neutral {S-2}Zr(NMe{sub 2}){sub 2} cyclizes primary aminopentenes providing pyrrolidines with S-configuration; whereas {S-2}Zr(NMe{sub 2}){sub 2} provides R-configured pyrrolidines. The yttrium complex {S-2}YCH{sub 2}SiMe{sub 3} also affords S-configured pyrrolidines by cyclization of aminopentenes, however the enantiomeric excesses of products are low. An alternative optically active yttrium complex {PhB(C{sub 5}H{sub 4})(Ox{sup 4S-tBu}){sub 2}}YCH{sub 2}SiMe{sub 3} ({S-3}YCH{sub 2}SiMe{sub 3}) is synthesized, which displays highly enantioselective in the cyclization of aminoalkenes at room temperature affording S-configured cyclic amines with enantiomeric excesses up to 96%. A noninsertive mechanism involving a six-membered transition state by a concerted C?N bond formation and N?H bond cleavage is proposed for {S-3}YCH{sub 2}SiMe{sub 3} system based on the kinetic, spectroscopic, and stereochemical features. In the end, a series of bis- and tris(oxazolinyl)borato iridium and rhodium complexes are synthesized with bis(oxazolinyl)phenylborane [PhB(Ox{sup Me2}){sub 2}]{sub n}, tris(oxazolinyl)borane [B(Ox{sup Me2}){sub 3}]n, and tris(4,4-dimethyl-2-oxazolinyl)phenylborate [To{sup M}]{sup ?}. All these new an

  6. Quaternary structure of the southern Po Plain (Italy): Eustatic and tectonic implications

    SciTech Connect (OSTI)

    Farabegoli E.; Onorevoli, G. )

    1990-05-01

    The Quaternary telescoped growth pattern of the Southern Po Plain developed during the last 250,000 yr through the superimposition of six fining-upward continental sequences, which can be correlated with terraced deposits. The boundary surfaces of every cycle (base and top of gravels and/or sands), the overall thickness, the thickness of basal coarse sediments, and the related trends and deviations have been computer-gridded and contoured. Comparison between the maps of the whole Quaternary sequence and the structural map of Pliocene isobaths suggests that the sequence evolution has been controlled by the combined action of glacio-eustatic fluctuations and strong tectonics. Lowstands controlled the regional pattern of the basal surfaces, and highstands coincide with the time of accretions of the sequences. Tectonics influenced the local subsidence, and consequently, the paleogeographic setting, following a rather regular cyclic trend. Four tectonic events alternated with four pauses; each period was 20,000-50,000 years long. Thrust kinematics proceeded cyclically from the inner to outer thrust faults, giving rise to isolated grouped and joined and grouped but free tectonic elements.

  7. Stratigraphic evidence for late Quaternary dune activity near Hudson on the Piedmont of northern Colorado

    SciTech Connect (OSTI)

    Forman, S.L.; Maat, P. (Univ. of Colorado, Boulder (USA))

    1990-08-01

    Stabilized dune fields are common features near Hudson, on the Piedmont of northern Colorado. Exposures in dune and interdune sites expose a sequence of eolian sediments and paleosols that record a complex history of eolian activity during the late Quaternary. Radiocarbon and thermoluminescence age estimates on A horizons buried by eolian sand indicate that dunes were reactivated sometime between 7 and 9 ka. On the basis of morphology of surface soils, the dunes were most recently stabilized <3 ka. At present that are no data to indicate if there were multiple periods of dune movement and stabilization during the Holocene. The penultimate pre-Holocene dune-forming episode probably terminated ca. 13 ka and may be coincident with the Pinedale glaciation. The stratigraphy at interdune sites shows at least two eolian depositional events prior to the penultimate event; they were separated by periods of pedogenesis, one of which may have exceeded 40 ka. This analysis indicates that dunes in northern Colorado were active during both cold-arid and warn-arid periods in the late Quaternary.

  8. Characterization of Quaternary and suspected Quaternary faults, regional studies, Nevada and California

    SciTech Connect (OSTI)

    Anderson, R.E.; Bucknam, R.C.; Crone, A.J.; Haller, K.M.; Machette, M.N.; Personius, S.F.; Barnhard, T.P.; Cecil, M.J.; Dart, R.L.

    1995-12-31

    This report presents the results of geologic studies that help define the Quaternary history of selected faults in the region around Yucca Mountain, Nevada. These results are relevant to the seismic-design basis of a potential nuclear waste repository at Yucca Mountain. The relevancy is based, in part, on a need for additional geologic data that became apparent in ongoing studies that resulted in the identification of 51 relevant and potentially relevant individual and compound faults and fault zones in the 100-km-radius region around the Yucca Mountain site. Geologic data used to characterize the regional faults and fault zones as relevant or potentially relevant seismic sources includes age and displacement information, maximum fault lengths, and minimum distances between the fault and the Yucca Mountain site. For many of the regional faults, no paleoseismic field studies have previously been conducted, and age and displacement data are sparse to nonexistent. In November 1994, the Branch of Earthquake and Landslide Hazards entered into two Memoranda of Agreement with the Yucca Mountain Project Branch to conduct field reconnaissance, analysis, and interpretation of six relevant and six potentially relevant regional faults. This report describes the results of study of those faults exclusive of those in the Pahrump-Stewart Valley-Ash Meadows-Amargosa Valley areas. We also include results of a cursory study of faults on the west flank of the Specter Range and in the northern part of the Last Chance Range. A four-phase strategy was implemented for the field study.

  9. Photoelectrochemical study of pitting on iron in borate buffer solution containing inhibitor

    SciTech Connect (OSTI)

    Yang, M.; Chen, L.; Cai, S.

    1997-01-01

    The photoelectrochemical behavior and the susceptibility of iron to pitting in borate buffer containing chloride ions (Cl{sup {minus}}) were investigated in the presence and absence of inhibitor PC-604, which is a mixture of polyhydric alcohol phosphoric easter and polyphosphoric ester of various molecular weights. Measurements of the band gap (E{sub g}) of the passive film on iron showed inhibitor concentration and passivation time did not interfere with E{sub g}. Photocurrent and photocurrent transients increased with increasing inhibitor quantities and passivation times at constant potential. The decay time-constant of the photocurrent transient was investigated as a specific parameter of the film. Data showed this parameter was related to pitting susceptibility of the passive film on iron.

  10. Temporal and spatial variability of ooid sand shoals: Comparison of Mississippian of Kentucky and Quaternary of Bahamas

    SciTech Connect (OSTI)

    Boardman, M.R. (Miami Univ., Oxford, OH (USA))

    1989-08-01

    An examination of the lithology and topography of Andros Island, Bahamas, reveals it is a Pleistocene ooid sand shoal. A comparison with Joulters Cays (a modern ooid sand shoal directly to the north) shows that much of the original depositional topography is preserved through at least one cycle of sea level highstand and lowstand. Both the Pleistocene and the Holocene ooid sand bodies are a few kilometers to tens of kilometers wide. The total vertical relief of a single episode of Quaternary ooid sand deposition is more than 10 m and includes accumulation in tidal channels, shallow flat areas, and eolian dunes. Today, much of Andros Island is within 2 m of present sea level and is the site of a belt several kilometers wide consisting of muddy tidal flat sediments overlying an exposure surface. The site of ooid sand deposition and shoal complex formation is not continuous along shorelines, especially windward margins, but shifts abruptly along the margins of platforms as a result of minor fluctuations of sea level. Thus, it should be expected that ooid sand shoals (ancient and modern) should be in direct lateral and vertical contact with lagoons, tidal flats, and reefs. The Mississippian Slade Formation contains many of the features of Quaternary ooid sand accumulation: abrupt vertical and lateral gradations between oolitic grainstones, packstones, and lime mudstones, vertical relief of individual oolitic sedimentary packages up to 30 m (perhaps with eolian dunes) and numerous exposure surfaces of varying intensities. These characteristics suggest that this formation represents a time of rapid fluctuations of relative sea level and abrupt shifts in the sites of ooid sand shoal complexes.

  11. Synthesis and Characterization of Lithium Bis(fluoromalonato)borate (LiBFMB) for Lithium Ion Battery Applications

    SciTech Connect (OSTI)

    Liao, Chen; Han, Kee Sung; Baggetto, Loic; Hillesheim, Daniel A; Custelcean, Radu; Lee, Dr. Eun-Sung; Guo, Bingkun; Bi, Zhonghe; Jiang, Deen; Veith, Gabriel M; Hagaman, Edward {Ed} W; Brown, Gilbert M; Bridges, Craig A; Paranthaman, Mariappan Parans; Manthiram, Arumugam; Dai, Sheng; Sun, Xiao-Guang

    2014-01-01

    A new orthochelated salt, lithium bis(monofluoromalonato)borate (LiBFMB), has been synthesized and purified for the first time for application in lithium ion batteries. The presence of fluorine in the borate anion of LiBFMB increases its oxidation potential and also facilitates ion dissociation, as reflected by the ratio of ionic conductivity measured by electrochemical impedance spectroscopy ( exp) and that by ion diffusivity coefficients obtained using pulsed field gradient nuclear magnetic resonance (PFG-NMR) technique ( NMR). Half-cell tests using 5.0 V lithium nickel manganese oxide (LiNi0.5Mn1.5O4) as a cathode and EC/DMC/DEC as a solvent reveals that the impedance of the LiBFMB cell is much larger than those of LiPF6 and LiBOB based cells, which results in lower capacity and poor cycling performance of the former. XPS spectra of the cycled cathode electrode suggest that because of the stability of the LiBFMB salt, the solid electrolyte interphase (SEI) formed on the cathode surface is significantly different from those of LiPF6 and LiBOB based electrolytes, resulting in more solvent decomposition and thicker SEI layer. Initial results also indicate that using high dielectric constant solvent PC alters the surface chemistry, reduces the interfacial impedance, and enhances the performance of LiBFMB based 5.0V cell.

  12. High spin polarization in CoFeMnGe equiatomic quaternary Heusler...

    Office of Scientific and Technical Information (OSTI)

    Title: High spin polarization in CoFeMnGe equiatomic quaternary Heusler alloy We report the structure, magnetic property, and spin polarization of CoFeMnGe equiatomic...

  13. Hydrocarbon and Deposit Morphology Effects on EGR Cooler Deposit...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and Deposit Morphology Effects on EGR Cooler Deposit Stability and Removal Hydrocarbon and Deposit Morphology Effects on EGR Cooler Deposit Stability and Removal This paper reports ...

  14. Structure and optical properties of a noncentrosymmetric borate RbSr{sub 4}(BO{sub 3}){sub 3}

    SciTech Connect (OSTI)

    Xia, M.J.; Li, R.K.

    2013-01-15

    A new noncentrosymmetric borate, RbSr{sub 4}(BO{sub 3}){sub 3} (abbreviated as RSBO), has been grown from Rb{sub 2}O--B{sub 2}O{sub 3}--RbF flux and its crystal structure was determined by single crystal x-ray diffraction. It crystallizes in space group Ama2 with cell parameters of a=11.128(10) A, b=12.155(15) A, c=6.952(7) A, Z=4. The basic structural units are isolated planar BO{sub 3} groups. Second harmonic generation (SHG) test of the title compound by the Kurtz-Perry method shows that RSBO can be phase matchable with an effective SHG coefficient about two-thirds as large as that of KH{sub 2}PO{sub 4} (KDP). Finally, based on the anionic group approximation, the optical properties of the title compound are compared with those of the structure-related apatite-like compounds with the formula 'A{sub 5}(TO{sub n}){sub 3}X'. - Graphical abstract: RbSr{sub 4}(BO{sub 3}){sub 3} and some other borate NLO compounds, namely Ca{sub 5}(BO{sub 3}){sub 3}F RCa{sub 4}(BO{sub 3}){sub 3}O (R=Y or Gd) and Na{sub 3}La{sub 2}(BO{sub 3}){sub 3} can be viewed as the derivatives of apatite. They have similar formula composed of five cations and three anion groups (we call them 5/3 structures). The detailed SHG coefficients and optical properties of the apatite-like NLO crystals were compared and summarized. Highlights: Black-Right-Pointing-Pointer A new noncentrosymmetric borate RbSr{sub 4}(BO{sub 3}){sub 3} was grown from flux. Black-Right-Pointing-Pointer The RbSr{sub 4}(BO{sub 3}){sub 3} can be viewed as a derivative of the apatite-like structure. Black-Right-Pointing-Pointer The structure and its relationship to the optical properties of RbSr{sub 4}(BO{sub 3}){sub 3} are compared with other NLO crystals with apatite-like structures. Black-Right-Pointing-Pointer The basic structural units are the planar BO{sub 3} groups in the structure. Black-Right-Pointing-Pointer Second harmonic generation (SHG) test shows that RbSr{sub 4}(BO{sub 3}){sub 3} can be phase matchable with an effective SHG coefficient about two-thirds as large as that of KH{sub 2}PO{sub 4}.

  15. One-photon band gap engineering of borate glass doped with ZnO for photonics applications

    SciTech Connect (OSTI)

    Abdel-Baki, Manal; Abdel-Wahab, Fathy A.; El-Diasty, Fouad

    2012-04-01

    Lithium tungsten borate glass of the composition (0.56-x)B{sub 2}O{sub 3}-0.4Li{sub 2}O-xZnO-0.04WO{sub 3} (0 {<=}x{<=} 0.1 mol. %) is prepared for photonics applications. The glass is doped with ZnO to tune the glass absorption characteristics in a wide spectrum range (200-2500 nm). Chemical bond approach, including chemical structure, electronegativity, bond ionicity, nearest-neighbor coordination, and other chemical bonding aspect, is used to analyze and to explain the obtained glass properties such as: transmittance, absorption, electronic structure parameters (bandgap, Fermi level, and Urbach exciton-phonon coupling), Wannier free excitons excitation (applying Elliott's model), and two-photon absorption coefficient as a result of replacement of B{sub 2}O{sub 3} by ZnO.

  16. Deposition head for laser

    DOE Patents [OSTI]

    Lewis, Gary K. (Los Alamos, NM); Less, Richard M. (Los Alamos, NM)

    1999-01-01

    A deposition head for use as a part of apparatus for forming articles from materials in particulate form in which the materials are melted by a laser beam and deposited at points along a tool path to form an article of the desired shape and dimensions. The deposition head delivers the laser beam and powder to a deposition zone, which is formed at the tip of the deposition head. A controller comprised of a digital computer directs movement of the deposition zone along the tool path and provides control signals to adjust apparatus functions, such as the speed at which the deposition head moves along the tool path.

  17. direct_deposit_111609

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    PROTECT YOUR BANKING INFORMATION: DO NOT complete this form until you are ready to submit it to the Payroll Department. DIRECT DEPOSIT REQUEST Directions: 1. Provide required information neatly, legibly; 2. If Checking Account Direct Deposit, include a voided check. a. DO NOT submit a deposit slip! 3. If Savings Account Direct Deposit, include a copy of savings card. 4. Sign this form; 5. Inter-office mail it to Craft Payroll at "P238." DIRECT DEPOSITION AUTHORIZATION I hereby

  18. Quaternary history of the northeastern Bighorn Basin based on a climatically-controlled process-response model

    SciTech Connect (OSTI)

    Birdseye, R.U.

    1985-01-01

    The highest surfaces and oldest Pleistocene sediments in the northeastern Bighorn Basin are associated with the 600 kya North Kane Ash. Subsequent climatically-induced periods of aggradation and incision produced the remaining geomorphic elements. Processes associated with a typical interglacial-glacial cycle include: (1) interglacial stability with Bighorn River alluviation, pedimentation, and eolian deposition; (2) late-interglacial to early-glacial incision; (3) alluvial fan extension and increased landslide development during glacial intervals; and (4) an early-interglacial return to more stable conditions. Frequent stream captures during interglacial times were caused by the out-of-phase relationships between the Bighorn River and its tributaries. Quaternary climates of a given type have not been of equal magnitude or duration in the northeastern Bighorn Basin. The most intense glacial climates from which sediments are preserved are believed to have occurred ca. 600 kya, 440 kya an d140 kya. An abnormally dry climate existed between 400 kya and 275 kya, while extremely wet interglacial conditions prevailed about 100 kya. The last complete climatic cycle was the Bull Lake. The subsequent Holocene interglacial has been unusually dry. Thus not all Pleistocene climates have been capable of generating terraces of extensive alluvial fans.

  19. Raman and far ir spectroscopic study of quaternary ammonium polybromide fused salt phases for zinc bromine circulating electrolyte batteries

    SciTech Connect (OSTI)

    Larrabee, J.A.; Graf, K.R.; Grimes, P.G.

    1985-01-01

    The circulating electrolyte zinc bromine battery is an attractive advanced battery system. The electrolyte is a solution of zinc bromide, quaternary ammonium bromides for bromine complexation and added salts to enhance properties. Laser Raman spectroscopy and far infrared spectroscopy were used to characterize the liquid quaternary ammonium polybromide fused salt phases.

  20. Radionuclide deposition control

    DOE Patents [OSTI]

    Brehm, William F.; McGuire, Joseph C.

    1980-01-01

    The deposition of radionuclides manganese-54, cobalt-58 and cobalt-60 from liquid sodium coolant is controlled by providing surfaces of nickel or high nickel alloys to extract the radionuclides from the liquid sodium, and by providing surfaces of tungsten, molybdenum or tantalum to prevent or retard radionuclide deposition.

  1. Solution deposition assembly

    DOE Patents [OSTI]

    Roussillon, Yann; Scholz, Jeremy H; Shelton, Addison; Green, Geoff T; Utthachoo, Piyaphant

    2014-01-21

    Methods and devices are provided for improved deposition systems. In one embodiment of the present invention, a deposition system is provided for use with a solution and a substrate. The system comprises of a solution deposition apparatus; at least one heating chamber, at least one assembly for holding a solution over the substrate; and a substrate curling apparatus for curling at least one edge of the substrate to define a zone capable of containing a volume of the solution over the substrate. In another embodiment of the present invention, a deposition system for use with a substrate, the system comprising a solution deposition apparatus; at heating chamber; and at least assembly for holding solution over the substrate to allow for a depth of at least about 0.5 microns to 10 mm.

  2. Upper Pleistocene-to-Holocene depositional sequences in the north-central Gulf of Mexico

    SciTech Connect (OSTI)

    Bowland, C. ); Wood, L.J. )

    1991-03-01

    Upper Quaternary depositional sequences and their systems tracts can be delineated in the Main Pass area using minisparker seismic data. Core collected by the Gulf of Mexico Outer Shelf/Slope Research Consortium (Amoco, ARCO, BP, Chevron, Elf-Aquitaine, Exxon, Marathon, Mobil, and Texaco) sampled these systems tracts on one site in Main Pass 303. At the shelfbreak, a distinct change in depositional style occurs across the latest Wisconsinan sequence boundary. Widespread progradational systems (late highstand systems tract) below become focused into discrete depocenters with predominantly aggradational deposits (lowstand systems tract) above. Focusing was probably a result of localized high subsidence rates due to salt movement, progradation into rapidly deepening water, and, possibly, stabilization of sediment transport paths on the exposed shelf. No age-equivalent submarine canyons are present in this area. The oldest mappable systems tract is a highstand systems tract deposited during stage 3 interstadial and the early-to-middle stage 2 glacial. The overlying transgressive systems tract was deposited coeval with the stage 2-stage 1 transition. It thins in a land-ward direction, except where an updip depocenter was present. At the corehole site, the transgressive systems tract consists of fining-upward deposits ranging from medium-grained sands to clays. The transgressive systems tract includes small slope-front-fill lenses deposited on the uppermost slope above and adjacent to lowstand deltaic depocenters. These lenses likely comprise silt and clay derived from either reworking of lowstand deltas or sediment bypassing the outer shelf.

  3. Role of Anions and Reaction Conditions in the Preparation of Uranium(VI), Neptunium(VI), and Plutonium(VI) Borates

    SciTech Connect (OSTI)

    none,

    2011-02-03

    U(VI), Np(VI), and Pu(VI) borates with the formula AnO2[B8O11(OH)4] (An = U, Np, Pu) have been prepared via the reactions of U(VI) nitrate, Np(VI) perchlorate, or Pu(IV) or Pu(VI) nitrate with molten boric acid. These compounds are all isotypic and consist of a linear actinyl(VI) cation, AnO22+, surrounded by BO3 triangles and BO4 tetrahedra to create an AnO8 hexagonal bipyramidal environment. The actinyl bond lengths are consistent with actinide contraction across this series. The borate anions bridge between actinyl units to create sheets. Additional BO3 triangles and BO4 tetrahedra extend from the polyborate layers and connect these sheets together to form a three-dimensional chiral framework structure. UV-vis-NIR absorption and fluorescence spectroscopy confirms the hexavalent oxidation state in all three compounds. Bond-valence parameters are developed for Np(VI).

  4. Investigation of the sulfur and lithium to sulfur ratio threshold in stress corrosion cracking of sensitized alloy 600 in borated thiosulfate solution

    SciTech Connect (OSTI)

    Bandy, R.; Kelly, K.

    1984-07-01

    The stress corrosion cracking of sensitized Alloy 600 was investigated in aerated solutions of sodium thiosulfate generally containing 1.3% boric acid. The aim of the investigation, among others, was to determine the existence, if any, of a threshold level of sulfur, and lithium to sulfur ratio governing the SCC. Specimens were first solution annealed at 1135/sup 0/C for 45 minutes, water quenched, and then sensitized at 621/sup 0/C for 18 hours. Reverse U-bends were tested at room temperature, whereas slow strain rate and constant load tests were performed at 80/sup 0/C. All tests were performed in solutions open to the atmosphere. The results indicate that in the borated thiosulfate solution containing 7 ppM sulfur, 5 ppM lithium as lithium hydroxide is sufficient to inhibit SCC in U-bends. The occurrence of inhibition seems to correlate to the rapid increase of pH and conductivity of the solution as a result of the lithium hydroxide addition. In the slow strain rate tests in the borated solution containing 0.7 ppM lithium as lithium hydroxide, significant stress corrosion cracking is observed at a sulfur level of 30 ppb, i.e., a lithium to sulfur ratio of 23. In a parallel test in 30 ppb sulfur level but without any lithium hydroxide, the stress corrosion cracking is more severe than that in the lithiated environment, thus implying that lithium hydroxide plays some role in the stress corrosion cracking inhibition.

  5. Perspectives on Deposition Velocity

    Office of Environmental Management (EM)

    Deposition Velocity ... Going down the rabbit hole to explain that sinking feeling Brian DiNunno, Ph.D. Project Enhancement Corporation June 6 th , 2012 Discussion Framework  Development of the HSS Deposition Velocity Safety Bulletin  Broader discussion of appropriate conservatism within dispersion modeling and DOE-STD-3009 DOE-STD-3009 Dose Comparison "General discussion is provided for source term calculation and dose estimation, as well as prescriptive guidance for the latter. The

  6. Quaternary volcanism, tectonics, and sedimentation in the Idaho National Engineering Laboratory area

    SciTech Connect (OSTI)

    Hackett, W.R.; Smith, R.P.

    1992-01-01

    In this article, we discuss the regional context and describe localities for a two-day field excursion in the vicinity of the Idaho National Engineering Laboratory (INEL). We address several geologic themes: (1) Late Cenozoic, bimodal volcanism of the Eastern Snake River Plain (ESRP), (2) the regional tectonics and structural geology of the Basin and Range province to the northwest of the ESRP, (3) fluvial, lacustrine, and aeolian sedimentation in the INEL area, and (4) the influence of Quaternary volcanism and tectonics on sedimentation near the INEL.

  7. Quaternary volcanism, tectonics, and sedimentation in the Idaho National Engineering Laboratory area

    SciTech Connect (OSTI)

    Hackett, W.R.; Smith, R.P.

    1992-09-01

    In this article, we discuss the regional context and describe localities for a two-day field excursion in the vicinity of the Idaho National Engineering Laboratory (INEL). We address several geologic themes: (1) Late Cenozoic, bimodal volcanism of the Eastern Snake River Plain (ESRP), (2) the regional tectonics and structural geology of the Basin and Range province to the northwest of the ESRP, (3) fluvial, lacustrine, and aeolian sedimentation in the INEL area, and (4) the influence of Quaternary volcanism and tectonics on sedimentation near the INEL.

  8. Investigation of the Decomposition Mechanism of Lithium Bis(oxalate)borate (LiBOB) Salt in the Electrolyte of an Aprotic LiO2 Battery

    SciTech Connect (OSTI)

    Lau, Kah Chun; Lu, Jun; Low, John; Peng, Du; Wu, Huiming; Albishri, Hassan M.; Al-Hady, D. Abd; Curtiss, Larry A.; Amine, Khalil

    2014-04-01

    The stability of the lithium bis(oxalate) borate (LiBOB) salt against lithium peroxide (Li2O2) formation in an aprotic LiO2 (Liair) battery is investigated. From theoretical and experimental findings, we find that the chemical decomposition of LiBOB in electrolytes leads to the formation lithium oxalate during the discharge of a LiO2 cell. According to density functional theory (DFT) calculations, the formation of lithium oxalate as the reaction product is exothermic and therefore is thermodynamically feasible. This reaction seems to be independent of solvents used in the LiO2 cell, and therefore LiBOB is probably not suitable to be used as the salt in LiO2 cell electrolytes.

  9. Acoustic profiles and images of the Palos Verdes Margin: Implications concerning deposition from the White's Point outfall

    SciTech Connect (OSTI)

    Hampton, M A.; Karl, H; Murray, Christopher J. )

    2001-12-01

    Subbottom profiles and sidescan-sonar images collected on and around the Palos Verdes shelf show a surficial deposit interpreted to contain effluent from the White's Point diffusers, as well as showing several geologic features that affect the deposit's distribution. The effluent-affected deposit is visible in high-resolution subbottom profiles on the shelf and the adjacent San Pedro basin slope to water depths of 170 m. It has a maximum thickness of 75 cm and was mapped acoustically over an area of 10.8 km{sup 2}, which encompasses a volume of about 3.2 million m{sup 3}. The deposit's basal reflector is acoustically distinct over most of the mapped area, implying that the deposit has not been extensively mixed across its base, perhaps being relatively free of reworking since its initial deposition. Nearshore, the basal reflector is weak and fades away toward land, which could result from syndepositional intermixing of coarse native sediment (particularly from the Portuguese Bend landslide) with effluent in the high-energy nearshore zone, or postdepositionally by physical (wave) or biological mixing across the interface. The geometry of the deposit implies that effluent is dispersed primarily in a northwesterly and seaward direction from the diffusers. Dispersal across the shelf break is in some places strongly affected by topography, particularly by submarine canyons. The deposit overlies stratified and unstratified Quaternary sediment, up to 30 m thick, that in turn overlies the irregular erosional surface of deformed Miocene bedrock that crops out in places on the shelf and upper basin slope. The effluent-affected deposit rests on potentially unstable landslide deposits on the San Pedro basin slope. The acoustic profiles and side-scan images show evidence for active and inactive vents, probably of hot water and gas, some of which are within the boundary of the effluent-affected sediment deposit and could disrupt it if seepage occurs.

  10. High spin polarization in CoFeMnGe equiatomic quaternary Heusler alloy

    SciTech Connect (OSTI)

    Bainsla, Lakhan; Suresh, K. G.; Nigam, A. K.; Manivel Raja, M.; Varaprasad, B. S. D. Ch. S.; Takahashi, Y. K.; Hono, K.

    2014-11-28

    We report the structure, magnetic property, and spin polarization of CoFeMnGe equiatomic quaternary Heusler alloy. The alloy was found to crystallize in the cubic Heusler structure (prototype LiMgPdSn) with considerable amount of DO{sub 3} disorder. Thermal analysis result indicated the Curie temperature is about 750 K without any other phase transformation up to melting temperature. The magnetization value was close to that predicted by the Slater-Pauling curve. Current spin polarization of P = 0.70 ± 0.01 was deduced using point contact andreev reflection measurements. The temperature dependence of electrical resistivity has been fitted in the temperature range of 5–300 K in order to check for the half metallic behavior. Considering the high spin polarization and Curie temperature, this material appears to be promising for spintronic applications.

  11. Multi-chamber deposition system

    DOE Patents [OSTI]

    Jacobson, Richard L.; Jeffrey, Frank R.; Westerberg, Roger K.

    1989-06-27

    A system for the simultaneous deposition of different coatings onto a thin web within a large volume vacuum chamber is disclosed which chamber is provided with a plurality of deposition chambers in which the different layers are deposited onto the film as its moves from a supply roll to a finished take-up roll of coated web. The deposition chambers provided within the large vacuum chamber are provided with separate seals which minimize back diffusion of any dopant gas from adjacent deposition chambers.

  12. Multi-chamber deposition system

    DOE Patents [OSTI]

    Jacobson, Richard L.; Jeffrey, Frank R.; Westerberg, Roger K.

    1989-10-17

    A system for the simultaneous deposition of different coatings onto a thin web within a large volume vacuum chamber is disclosed which chamber is provided with a plurality of deposition chambers in which the different layers are deposited onto the film as its moves from a supply roll to a finished take-up roll of coated web. The deposition chambers provided within the large vacuum chamber are provided with separate seals which minimize back diffusion of any dopant gas from adjacent deposition chambers.

  13. Deposition System Controller

    Energy Science and Technology Software Center (OSTI)

    2005-10-01

    This software is a complete thin film deposition controller. The software takes as its input a script file that dictates enablinig/disabling of sputtering power supplies, pause times, velocities and distances to move a substrate. An emulator has been created and built into the software package that can debug in advance any deposition script and decide if there is an overrun condition, accidental infinite look, and can estimate a time for completion. All necessary process variablesmore » are data logged and recorded for later inspection. This emulator currently interfaces to a Parker-Compumotor SX6 stepper moror indexer, but the software is written in such a way that it is easily modifiable for interface to othe brand and models of motor drivers. Other process I/O variables may be easily added. The software uses any multifunction DAQ card from National Instruments via their free NIDAQ API package, but again, the software is written such that othe brand DAQ cards may be used.« less

  14. Evaluation of precipitates used in strainer head loss testing : Part III. Long-term aluminum hydroxide precipitation tests in borated water.

    SciTech Connect (OSTI)

    Bahn, C. B.; Kasza, K. E.; Shack, W. J.; Natesan, K.; Klein, P.

    2011-05-01

    Long-term aluminum (Al) hydroxide precipitation tests were conducted in slightly alkaline solutions containing 2500 ppm boron. The solution temperature was cycled to obtain a temperature history more representative of emergency core cooling system temperatures after a loss-of-coolant accident. The observed Al precipitation boundary was close to predicted results for amorphous precipitates, which are higher than the solubility expected for crystalline forms. Bench-scale and loop head loss test results under various conditions were successfully combined into single map in a temperature - 'pH + p[Al]{sub T}' domain, which yielded two bounding lines for Al hydroxide solubility in borated alkaline water that depend on whether or not loop head loss tests with Al alloy coupons are included. Precipitates were observed to form either as fine, cloudy suspensions, which showed very little tendency to settle, or as flocculated precipitates. The flocculation tendency of the precipitates can be qualitatively explained by a colloid stability theory or a phase diagram for protein solutions.

  15. Biocompatible Coating (Parylene) Deposition System

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Metal Containing Diamond-Like Carbon Deposition System Varshni Singh and Jost Goettert Center for Advanced Microstructures & Devices, Louisiana State University, 6980 Jefferson Hwy., Baton Rouge, LA-70806 Summary CAMD/LSU received funds from the Board of Regents' Enhancement Program for modifying and upgrading of a diamond like carbon (DLC) deposition system. This included a magnetron with shield, DC power supply and pulsing unit, mass flow controllers and in-situ thin film deposition

  16. Momentum Deposition in Curvilinear Coordinates

    SciTech Connect (OSTI)

    Cleveland, Mathew Allen; Lowrie, Robert Byron; Rockefeller, Gabriel M.; Thompson, Kelly Glen; Wollaber, Allan Benton

    2015-08-03

    The momentum imparted into a material by thermal radiation deposition is an important physical process in astrophysics and inertial confinement fusion (ICF) simulations. In recent work we presented a new method of evaluating momentum deposition that relies on the combination of a time-averaged approximation and a numerical integration scheme. This approach robustly and efficiently evaluates the momentum deposition in spherical geometry. Future work will look to extend this approach to 2D cylindrical geometries.

  17. P-odd, P-even, and T-odd asymmetries in true quaternary fission of nuclei

    SciTech Connect (OSTI)

    Kadmensky, S. G., E-mail: kadmensky@phys.vsu.ru; Titova, L. V. [Voronezh State University (Russian Federation)] [Voronezh State University (Russian Federation)

    2013-04-15

    The coefficients of P-odd, P-even, and T -odd asymmetries for a third and a fourth prescission particle emitted in the true quaternary fission of nuclei that was induced by polarized cold neutrons were studied on the basis of quantum-mechanical fission theory. By using non-evaporation (nonadiabatic) mechanisms of light-particle emission, these coefficients were compared with the analogous coefficients for prescission third particles emitted in the ternary fission of nuclei.

  18. Carbonate Deposition | Open Energy Information

    Open Energy Info (EERE)

    Alteration Products Carbonate deposits come in many forms and sometimes develop into spectacular colorful terraces such as these at Mammoth Hot Springs in Yellowstone National...

  19. Degradation of Imidazolium- and Quaternary Ammonium-Functionalized Poly(fluorenyl ether ketone sulfone) Anion Exchange Membranes

    SciTech Connect (OSTI)

    Chen, DY; Hickner, MA

    2012-11-01

    Imidazolium and quaternary ammonium-functionalized poly(fluorenyl ether ketone sulfone)s were synthesized successfully with the same degree of cationic functionalization and identical polymer backbones for a comparative study of anion exchange membranes (AEMs) for solid-state alkaline membrane fuel cells (AMFCs). Both anion exchange membranes were synthesized using a new methyl-containing monomer that avoided the use of toxic chloromethylation reagents. The polymer chemical structures were confirmed by H-1 NMR and FTIR. The derived AEMs were fully characterized by water uptake, anion conductivity, stability under aqueous basic conditions, and thermal stability. Interestingly, both the cationic groups and the polymer backbone were found to be degraded in 1 M NaOH solution at 60 degrees C over 48 h as measured by changes of ion exchange capacity and intrinsic viscosity. Imidazolium-functionalized poly(fluorenyl ether ketone sulfone)s had similar aqueous alkaline stability to quaternary ammonium-functionalized materials at 60 degrees C but much lower stability at 80 degrees C. This work demonstrates that quaternary ammonium and imidazolium cationic groups are not stable on poly(arylene ether sulfone) backbones under relatively mild conditions. Additionally, the poly(arylene ether sulfone) backbone, which is one of the most common polymers used in ion exchange membrane applications, is not stable in the types of molecular configurations analyzed.

  20. New insulating antiferromagnetic quaternary iridates MLa10Ir4O24 (M=Sr, Ba)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhao, Qingbiao; Han, Fei; Stoumpos, Constantinos C.; Han, Tian -Heng; Li, Hao; Mitchell, J. F.

    2015-07-01

    Recently, oxides of Ir4+ have received renewed attention in the condensed matter physics community, as it has been reported that certain iridates have a strongly spin-orbital coupled (SOC) electronic state, Jeff = ½, that defines the electronic and magnetic properties. The canonical example is the Ruddlesden-Popper compound Sr2IrO4, which has been suggested as a potential route to a new class of high temperature superconductor due to the formal analogy between Jeff = ½ and the S = ½ state of the cuprate superconductors. The quest for other iridium oxides that present tests of the underlying SOC physics is underway. Inmore » this spirit, here we report the synthesis and physical properties of two new quaternary tetravalent iridates, MLa10Ir4O24 (M = Sr, Ba). The crystal structure of both compounds features isolated IrO6 octahedra in which the electronic configuration of Ir is d5. As a result, both compounds order antiferromagnetically despite the lack of obvious superexchange pathways, and resistivity measurement shows that SrLa10Ir4O24 is an insulator.« less

  1. Variable temperature semiconductor film deposition

    DOE Patents [OSTI]

    Li, Xiaonan; Sheldon, Peter

    1998-01-01

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  2. Variable temperature semiconductor film deposition

    DOE Patents [OSTI]

    Li, X.; Sheldon, P.

    1998-01-27

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  3. Deposited films with improved microstructures

    DOE Patents [OSTI]

    Patten, James W.; Moss, Ronald W.; McClanahan, Edwin D.

    1984-01-01

    Methods for improving microstructures of line-of-sight deposited films are described. Columnar growth defects ordinarily produced by geometrical shadowing during deposition of such films are eliminated without resorting to post-deposition thermal or mechanical treatments. The native, as-deposited coating qualities, including homogeneity, fine grain size, and high coating-to-substrate adherence, can thus be retained. The preferred method includes the steps of emitting material from a source toward a substrate to deposit a coating non-uniformly on the substrate surface, removing a portion of the coating uniformly over the surface, again depositing material onto the surface, but from a different direction, and repeating the foregoing steps. The quality of line-of-sight deposited films such as those produced by sputtering, progressively deteriorates as the angle of incidence between the flux and the surface becomes increasingly acute. Depositing non-uniformly, so that the coating becomes progressively thinner as quality deteriorates, followed by uniformly removing some of the coating, such as by resputtering, eliminates the poor quality portions, leaving only high quality portions of the coating. Subsequently sputtering from a different direction applies a high quality coating to other regions of the surface. Such steps can be performed either simultaneously or sequentially to apply coatings of a uniformly high quality, closed microstructure to three-dimensional or large planar surfaces.

  4. Direct Deposit Form | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Direct Deposit Form Direct Deposit Form PDF icon Direct Deposit Form More Documents & Publications Employee In-Processing Forms Agreement for Minority Financial Institutions Participation in the Bank Deposit Financial Assistance Program Agreement for Minority Financial Institutions Participation in the Bank Deposit Financial Assistance Program

  5. Particle deposition in ventilation ducts

    SciTech Connect (OSTI)

    Sippola, Mark R.

    2002-09-01

    Exposure to airborne particles is detrimental to human health and indoor exposures dominate total exposures for most people. The accidental or intentional release of aerosolized chemical and biological agents within or near a building can lead to exposures of building occupants to hazardous agents and costly building remediation. Particle deposition in heating, ventilation and air-conditioning (HVAC) systems may significantly influence exposures to particles indoors, diminish HVAC performance and lead to secondary pollutant release within buildings. This dissertation advances the understanding of particle behavior in HVAC systems and the fates of indoor particles by means of experiments and modeling. Laboratory experiments were conducted to quantify particle deposition rates in horizontal ventilation ducts using real HVAC materials. Particle deposition experiments were conducted in steel and internally insulated ducts at air speeds typically found in ventilation ducts, 2-9 m/s. Behaviors of monodisperse particles with diameters in the size range 1-16 {micro}m were investigated. Deposition rates were measured in straight ducts with a fully developed turbulent flow profile, straight ducts with a developing turbulent flow profile, in duct bends and at S-connector pieces located at duct junctions. In straight ducts with fully developed turbulence, experiments showed deposition rates to be highest at duct floors, intermediate at duct walls, and lowest at duct ceilings. Deposition rates to a given surface increased with an increase in particle size or air speed. Deposition was much higher in internally insulated ducts than in uninsulated steel ducts. In most cases, deposition in straight ducts with developing turbulence, in duct bends and at S-connectors at duct junctions was higher than in straight ducts with fully developed turbulence. Measured deposition rates were generally higher than predicted by published models. A model incorporating empirical equations based on the experimental measurements was applied to evaluate particle losses in supply and return duct runs. Model results suggest that duct losses are negligible for particle sizes less than 1 {micro}m and complete for particle sizes greater than 50 {micro}m. Deposition to insulated ducts, horizontal duct floors and bends are predicted to control losses in duct systems. When combined with models for HVAC filtration and deposition to indoor surfaces to predict the ultimate fates of particles within buildings, these results suggest that ventilation ducts play only a small role in determining indoor particle concentrations, especially when HVAC filtration is present. However, the measured and modeled particle deposition rates are expected to be important for ventilation system contamination.

  6. MACCS2/Deposition Velocity Workshop

    Broader source: Energy.gov [DOE]

    The Department of Energy’s Chief of Nuclear Safety hosted a MACCS2/Deposition Velocity Workshop on June 5-6, 2012, in Germantown, Maryland. Approximately 70 participants attended. The purpose of...

  7. Chemical enhancement of surface deposition

    DOE Patents [OSTI]

    Patch, Keith D.; Morgan, Dean T.

    1997-07-29

    A method and apparatus for increasing the deposition of ions onto a surface, such as the adsorption of uranium ions on the detecting surface of a radionuclide detector. The method includes the step of exposing the surface to a complexing agent, such as a phosphate ion solution, which has an affinity for the dissolved species to be deposited on the surface. This provides, for example, enhanced sensitivity of the radionuclide detector.

  8. Vapor deposition of hardened niobium

    DOE Patents [OSTI]

    Blocher, Jr., John M.; Veigel, Neil D.; Landrigan, Richard B.

    1983-04-19

    A method of coating ceramic nuclear fuel particles containing a major amount of an actinide ceramic in which the particles are placed in a fluidized bed maintained at ca. 800.degree. to ca. 900.degree. C., and niobium pentachloride vapor and carbon tetrachloride vapor are led into the bed, whereby niobium metal is deposited on the particles and carbon is deposited interstitially within the niobium. Coating apparatus used in the method is also disclosed.

  9. Chemical enhancement of surface deposition

    DOE Patents [OSTI]

    Patch, K.D.; Morgan, D.T.

    1997-07-29

    A method and apparatus are disclosed for increasing the deposition of ions onto a surface, such as the adsorption of uranium ions on the detecting surface of a radionuclide detector. The method includes the step of exposing the surface to a complexing agent, such as a phosphate ion solution, which has an affinity for the dissolved species to be deposited on the surface. This provides, for example, enhanced sensitivity of the radionuclide detector. 16 figs.

  10. Deposition > Complex Oxides > Research > The Energy Materials...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Analysis Nanoparticles Nanostructured Systems Deposition Deposition Veeco GEN10 MBE system dedicated to the growth of oxide heterostructures being installed in Duffield Lab at...

  11. Methods of electrophoretic deposition for functionally graded...

    Office of Scientific and Technical Information (OSTI)

    Methods of electrophoretic deposition for functionally graded porous nanostructures and ... and depositing the material onto surfaces of the particles of the impurity to form ...

  12. Geologic Characterization of Young Alluvial Basin-Fill Deposits from Drill Hole Data in Yucca Flat, Nye County, Nevada.

    SciTech Connect (OSTI)

    Donald S. Sweetkind; Ronald M. Drake II

    2007-01-22

    Yucca Flat is a topographic and structural basin in the northeastern part of the Nevada Test Site (NTS) in Nye County, Nevada, that has been the site of numerous underground nuclear tests; many of these tests occurred within the young alluvial basin-fill deposits. The migration of radionuclides to the Paleozoic carbonate aquifer involves passage through this thick, heterogeneous section of Tertiary and Quaternary rock. An understanding of the lateral and vertical changes in the material properties of young alluvial basin-fill deposits will aid in the further development of the hydrogeologic framework and the delineation of hydrostratigraphic units and hydraulic properties required for simulating ground-water flow in the Yucca Flat area. This report by the U.S. Geological Survey, in cooperation with the U.S. Department of Energy, presents data and interpretation regarding the three-dimensional variability of the shallow alluvial aquifers in areas of testing at Yucca Flat, data that are potentially useful in the understanding of the subsurface flow system. This report includes a summary and interpretation of alluvial basin-fill stratigraphy in the Yucca Flat area based on drill hole data from 285 selected drill holes. Spatial variations in lithology and grain size of the Neogene basin-fill sediments can be established when data from numerous drill holes are considered together. Lithologic variations are related to different depositional environments within the basin including alluvial fan, channel, basin axis, and playa deposits.

  13. TULSA UNIVERSITY PARAFFIN DEPOSITION PROJECTS

    SciTech Connect (OSTI)

    Cem Sarica; Michael Volk

    2004-06-01

    As oil and gas production moves to deeper and colder water, subsea multiphase production systems become critical for economic feasibility. It will also become increasingly imperative to adequately identify the conditions for paraffin precipitation and predict paraffin deposition rates to optimize the design and operation of these multi-phase production systems. Although several oil companies have paraffin deposition predictive capabilities for single-phase oil flow, these predictive capabilities are not suitable for the multiphase flow conditions encountered in most flowlines and wellbores. For deepwater applications in the Gulf of Mexico, it is likely that multiphase production streams consisting of crude oil, produced water and gas will be transported in a single multiphase pipeline to minimize capital cost and complexity at the mudline. Existing single-phase (crude oil) paraffin deposition predictive tools are clearly inadequate to accurately design these pipelines, because they do not account for the second and third phases, namely, produced water and gas. The objective of this program is to utilize the current test facilities at The University of Tulsa, as well as member company expertise, to accomplish the following: enhance our understanding of paraffin deposition in single and two-phase (gas-oil) flows; conduct focused experiments to better understand various aspects of deposition physics; and, utilize knowledge gained from experimental modeling studies to enhance the computer programs developed in the previous JIP for predicting paraffin deposition in single and two-phase flow environments. These refined computer models will then be tested against field data from member company pipelines.

  14. Vapor deposition of thin films

    SciTech Connect (OSTI)

    Smith, D.C.; Pattillo, S.G.; Laia, J.R. Jr.; Sattelberger, A.P.

    1990-10-05

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl){sub 3}, iridium(allyl){sub 3}, molybdenum(allyl){sub 4}, tungsten(allyl){sub 4}, rhenium (allyl){sub 4}, platinum(allyl){sub 2}, or palladium(allyl){sub 2} are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  15. Fluidized bed deposition of diamond

    DOE Patents [OSTI]

    Laia, Jr., Joseph R.; Carroll, David W.; Trkula, Mitchell; Anderson, Wallace E.; Valone, Steven M.

    1998-01-01

    A process for coating a substrate with diamond or diamond-like material including maintaining a substrate within a bed of particles capable of being fluidized, the particles having substantially uniform dimensions and the substrate characterized as having different dimensions than the bed particles, fluidizing the bed of particles, and depositing a coating of diamond or diamond-like material upon the substrate by chemical vapor deposition of a carbon-containing precursor gas mixture, the precursor gas mixture introduced into the fluidized bed under conditions resulting in excitation mechanisms sufficient to form the diamond coating.

  16. Vapor deposition of thin films

    DOE Patents [OSTI]

    Smith, David C. (Los Alamos, NM); Pattillo, Stevan G. (Los Alamos, NM); Laia, Jr., Joseph R. (Los Alamos, NM); Sattelberger, Alfred P. (Los Alamos, NM)

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  17. Vacuum vapor deposition gun assembly

    DOE Patents [OSTI]

    Zeren, Joseph D.

    1985-01-01

    A vapor deposition gun assembly includes a hollow body having a cylindrical outer surface and an end plate for holding an adjustable heat sink, a hot hollow cathode gun, two magnets for steering the plasma from the gun into a crucible on the heat sink, and a shutter for selectively covering and uncovering the crucible.

  18. Deposition

    National Nuclear Security Administration (NNSA)

    Reporting Company 866.488.DEPO www.CapitalReportingCompany.com 1 DEPARTMENT OF ENERGY 1 2 PROPOSED CHANGES FOR DOE PART 810 3 ASSISTANCE TO FOREIGN NUCLEAR ACTIVITIES 4 5 NNSA - SNOPR ROLLOUT MEETING 6 7 Department of Energy 8 1000 Independence Avenue, S.W. 9 Forrestal Building 10 Washington, D.C. 11 12 13 Monday, August 5, 2013 14 1:00 p.m. 15 16 17 18 19 Reported by: Natalia Thomas, 20 Capital Reporting Company 21 22 Capital Reporting Company 866.488.DEPO www.CapitalReportingCompany.com 2 A P

  19. Deposition

    National Nuclear Security Administration (NNSA)

    ... 9 take a look at a rule that really no longer reflected 10 how proliferation was being conducted or how we saw 11 proliferation and, yet, also how industry was moving 12 forward. ...

  20. [Climate implications of terrestrial paleoclimate]. Quaternary Sciences Center, Desert Research Institute annual report, fiscal year 1994/1995

    SciTech Connect (OSTI)

    Wigand, P.E.

    1995-12-31

    The objective of this study is to collect terrestrial climate indicators for paleoclimate synthesis. The paleobiotic and geomorphic records are being examined for the local and regional impact of past climates to assess Yucca Mountain`s suitability as a high-level nuclear waste repository. In particular these data are being used to provide estimates of the timing, duration and extremes of past periods of moister climate for use in hydrological models of local and regional recharge that are being formulated by USGS and other hydrologists for the Yucca Mountain area. The project includes botanical, faunal, and geomorphic components that will be integrated to accomplish this goal. To this end personnel at the Quaternary Sciences Center of the Desert Research Institute in Reno, Nevada are conducting the following activities: Analyses of packrat middens; Analysis of pollen samples; and Determination of vegetation climate relationships.

  1. Chemical vapor deposition of sialon

    DOE Patents [OSTI]

    Landingham, R.L.; Casey, A.W.

    A laminated composite and a method for forming the composite by chemical vapor deposition are described. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200/sup 0/C; and impinging a gas containing N/sub 2/, SiCl/sub 4/, and AlCl/sub 3/ on the surface.

  2. Zinc deposition in acid electrolytes

    SciTech Connect (OSTI)

    McBreen, J.; Gannon, E.

    1981-01-01

    In the past decade, two aqueous zinc/halogen batteries, the zinc/chlorine, and the zinc/bromine systems, have been considered for load-leveling and vehicular applications. Even though considerable progress has been made in engineering these batteries, several problems related to the zinc electrode have yet to be solved. These are related to the growth of dendritic zinc and a maldistribution of the zinc deposit that can occur during cycling. Both problems are exacerbated by recharge of the battery after partial discharge of the zinc deposit. A survey of the literature indicates that a more desireable zinc morphology can be achieved by use of inorganic additives, fluorinated surfactants, and A-C modulation of the charging current. In this investigation, the deposition of zinc from zinc bromide and zinc chloride electrolytes was investigated under conditions that precluded dendrite growth. The techniques used were cyclic voltammetry, the potential step technique and scanning electron microscopy. The variables investigated were the substrate (zinc and dense graphite), electrolyte pH, inorganic additives (Pb/sup + +/ and Bi/sup 3 +/) and A-V modulation of the charging potential by superimposed square waves.

  3. Crediting Tritium Deposition in Accident Analysis

    SciTech Connect (OSTI)

    Murphy, C.E. Jr.

    2001-06-20

    This paper describes the major aspects of tritium dispersion phenomenology, summarizes deposition attributes of the computer models used in the DOE Complex for tritium dispersion, and recommends an approach to account for deposition in accident analysis.

  4. Microstructural Evolution of EGR Cooler Deposits

    Broader source: Energy.gov [DOE]

    Characterize the thermo-physical properties of the deposit under different operating conditions on model EGR cooler tube and determine the long-term changes in deposit properties due to thermal cycling and water/HC condensation

  5. Success Story: Chrome Deposit Corporation | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Success Story: Chrome Deposit Corporation Success Story: Chrome Deposit Corporation This case study describes how Chrome Deposit Corporation was able to reduce plant-wide energy ...

  6. Ion beam assisted deposition of thermal barrier coatings

    DOE Patents [OSTI]

    Youchison, Dennis L.; McDonald, Jimmie M.; Lutz, Thomas J.; Gallis, Michail A.

    2010-11-23

    Methods and apparatus for depositing thermal barrier coatings on gas turbine blades and vanes using Electron Beam Physical Vapor Deposition (EBPVD) combined with Ion Beam Assisted Deposition (IBAD).

  7. Chemical vapor deposition of epitaxial silicon

    DOE Patents [OSTI]

    Berkman, Samuel

    1984-01-01

    A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

  8. Metal deposition using seed layers

    DOE Patents [OSTI]

    Feng, Hsein-Ping; Chen, Gang; Bo, Yu; Ren, Zhifeng; Chen, Shuo; Poudel, Bed

    2013-11-12

    Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

  9. Chemical vapor deposition of sialon

    DOE Patents [OSTI]

    Landingham, Richard L.; Casey, Alton W.

    1982-01-01

    A laminated composite and a method for forming the composite by chemical vapor deposition. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200.degree. C.; and impinging a gas containing in a flowing atmosphere of air N.sub.2, SiCl.sub.4, and AlCl.sub.3 on the surface.

  10. Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths

    SciTech Connect (OSTI)

    Park, Seoung-Hwan; Pak, Y. Eugene; Park, Chang Young; Mishra, Dhaneshwar; Yoo, Seung-Hyun; Cho, Yong-Hee Shim, Mun-Bo; Kim, Sungjin

    2015-05-14

    Electronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (??quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light.

  11. Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition

    SciTech Connect (OSTI)

    Mackus, A. J. M.; Sanden, M. C. M. van de; Kessels, W. M. M.; Mulders, J. J. L.

    2010-06-15

    An approach for direct-write fabrication of high-purity platinum nanostructures has been developed by combining nanoscale lateral patterning by electron beam induced deposition (EBID) with area-selective deposition of high quality material by atomic layer deposition (ALD). Because virtually pure, polycrystalline Pt nanostructures are obtained, the method extends the application possibilities of EBID, whereas compared to other area-selective ALD approaches, a much higher resolution is attainable; potentially down to sub-10 nm lateral dimensions.

  12. Modeling particle deposition on HVAC heat exchangers

    SciTech Connect (OSTI)

    Siegel, J.A.; Nazaroff, W.W.

    2002-01-01

    Fouling of fin-and-tube heat exchangers by particle deposition leads to diminished effectiveness in supplying ventilation and air conditioning. This paper explores mechanisms that cause particle deposition on heat exchanger surfaces. We present a model that accounts for impaction, diffusion, gravitational settling, and turbulence. Simulation results suggest that some submicron particles deposit in the heat exchanger core, but do not cause significant performance impacts. Particles between 1 and 10 {micro}m deposit with probabilities ranging from 1-20% with fin edge impaction representing the dominant mechanism. Particles larger than 10 {micro}m deposit by impaction on refrigerant tubes, gravitational settling on fin corrugations, and mechanisms associated with turbulent airflow. The model results agree reasonably well with experimental data, but the deposition of larger particles at high velocities is underpredicted. Geometric factors, such as discontinuities in the fins, are hypothesized to be responsible for the discrepancy.

  13. Probabilities for the emission of light particles and their energy and angular distributions for true quaternary nuclear fission

    SciTech Connect (OSTI)

    Kadmensky, S. G., E-mail: kadmensky@phys.vsu.ru; Titova, L. V. [Voronezh State University (Russian Federation)] [Voronezh State University (Russian Federation)

    2013-01-15

    On the basis of quantum-mechanical fission theory, the features of true quaternary nuclear fission are studied by treating this fission process as a sequence of three processes following one another in the course of time. The first two processes are the escape of the first and then the second of the two light particles emitted from the neck of a fissioning nucleus because of a nonadiabatic character of the collective deformation motion of this nucleus. Finally, the third process is the separation of the fissioning nucleus into two rather heavy fission fragments. The differences that arise in the emission probabilities and in the angular and energy distributions upon going over from the first emitted to the second emitted prescission third and fourth particles are analyzed by invoking experimental data on the spontaneous and thermalneutron-induced fission of nuclei, and it is shown that these differences are caused by the changes both in the geometric configuration of the fissioning nucleus and in the shell structure of its neck after the first prescission particle is emitted from it.

  14. Mechanosynthesis, deposition and characterization of CZTS and CZTSe materials for solar cell applications

    SciTech Connect (OSTI)

    Shyju, T.S.; Anandhi, S.; Suriakarthick, R.; Gopalakrishnan, R.; Kuppusami, P.

    2015-07-15

    Mechanosynthesis of nanocrystalline powders of CZTS and CZTSe by ball milling technique and the physical properties of thermally evaporated CZTS and CZTSe thin films as a function of substrate temperature are investigated. Nanocrystalline Cu–Zn–Tin–Sulphide (CZTS) and Cu–Zn–Tin–Selenide (CZTSe) powders synthesized by ball milling at different milling time using the source materials of Cu, Zn, Sn, S (or) Se in the ratio 2:1:1:4 are investigated. The above synthesized powder was thermally evaporated on glass substrate kept at room temperature and 673 K under a vacuum of 10{sup −6} mbar to prepare quaternary compound semiconducting thin films in a single step process. The synthesized powder and deposited CZTS and CZTSe thin films belong to tetragonal crystal system. Raman spectra reveal that the synthesized nanocrystals are pure without any secondary phases. A gradual reduction in optical bandgap of films was observed with increasing substrate temperature due to increased crystallinity of the films. The changes in surface morphology of the films with respect to substrate temperature were studied by scanning electron microscopy and atomic force microscopy. Electrical studies indicate that the deposited films have p-type conductivity. - Highlights: • Nanocrystalline powders of CZTS and CZTSe are synthesized by ball milling technique. • The ball milled powder was thermally evaporated on glass at room temperature and 673 K. • Raman spectroscopy reveals that the synthesized nanocrystals are pure without any secondary phases. • SEM and AFM micrographs illustrate the granular type of growth and the roughness and particle sizes obtained at the substrate temperature of 673 K are higher than those obtained in the room temperature. • Hall coefficient obtained for the film confirms the p-type conductivity. • A gradual reduction in optical bandgap was observed with increasing substrate temperature.

  15. Selective deposition of nanostructured ruthenium oxide using...

    Office of Scientific and Technical Information (OSTI)

    Title: Selective deposition of nanostructured ruthenium oxide using Tobacco mosaic virus for micro-supercapacitors in solid Nafion electrolyte Authors: Gnerlich, Markus ; Ben-Yoav, ...

  16. Hydrothermally Deposited Rock | Open Energy Information

    Open Energy Info (EERE)

    at Paleochori, Milos, Greece. http:www.photovolcanica.comVolcanoInfoMilosMilos.html Hydrothermally deposited rock includes rocks and minerals that have precipitated from...

  17. Other Hydrothermal Deposits | Open Energy Information

    Open Energy Info (EERE)

    Capping Other Hydrothermal Alteration Products Colorful hydrothermal deposits dot the landscape at the Hverir Geothermal Area, Iceland. Photo by Darren Atkins User-specified field...

  18. Hygroscopic La[B{sub 5}O{sub 8}(OH)]NO{sub 3}·2H{sub 2}O: Insight into the evolution of borate fundamental building blocks

    SciTech Connect (OSTI)

    Zhao, Biao-Chun; Sun, Wei; Ren, Wei-Jian; Huang, Ya-Xi; Li, Zucheng; Pan, Yuanming; Mi, Jin-Xiao

    2013-10-15

    Borates have exceptionally diverse fundamental building blocks (FBBs), but factors controlling the formation of borate FBBs are poorly understood. The title compound La[B{sub 5}O{sub 8}(OH)]NO{sub 3}·2H{sub 2}O crystallizes in the space group P2{sub 1}/n with a=6.5396(12) Å, b=15.550(3) Å, c=10.6719(19) Å, β=90.44(1)° and Z=4 at 173(2) K. Its structure has been refined from single-crystal X-ray diffraction data to R{sub 1}=0.049 (for 2465) and wR{sub 2}=0.173 (for 2459 I>2σ(I)). This structure analysis and first-principles calculations show that the change of the FBB from 3Δ2□ in the title compound to 2Δ3□ in La[B{sub 5}O{sub 8}(OH)(H{sub 2}O)]NO{sub 3}·2H{sub 2}O is accompanied by a rotation of the NO{sub 3} group. FTIR, Rietveld and thermal analysis results show that the hygroscopic title compound is partially changed to La[B{sub 5}O{sub 8}(OH)(H{sub 2}O)]NO{sub 3}·2H{sub 2}O, with the conversion of [BO{sub 3}] to [BO{sub 3}(H{sub 2}O)] by water absorption. - Graphical abstract: The change of fundamental building blocks from La[B{sub 5}O{sub 8}(OH)]NO{sub 3}·2H{sub 2}O to La[B{sub 5}O{sub 8}(OH)(H{sub 2}O)]NO{sub 3}·2H{sub 2}O is accompanied by a rotation of the NO{sub 3} group . Display Omitted - Highlights: • Synthesis of a new hydrous lanthanum polyborate nitrate. • Single-crystal XRD structure with the 3Δ2⎕ FBB and an oriented NO{sub 3} group. • DFT calculations locate the H positions in three lanthanide polyborate nitrates. • Rietveld, FTIR and DFT results show hygroscopicity changes the FBBs.

  19. Metal thin film growth on multimetallic surfaces: From quaternary metallic glass to binary crystal

    SciTech Connect (OSTI)

    Jing, Dapeng

    2010-12-15

    The work presented in this thesis mainly focuses on the nucleation and growth of metal thin films on multimetallic surfaces. First, we have investigated the Ag film growth on a bulk metallic glass surface. Next, we have examined the coarsening and decay of bilayer Ag islands on NiAl(110) surface. Third, we have investigated the Ag film growth on NiAl(110) surface using low-energy electron diffraction (LEED). At last, we have reported our investigation on the epitaxial growth of Ni on NiAl(110) surface. Some general conclusions can be drawn as follows. First, Ag, a bulk-crystalline material, initially forms a disordered wetting layer up to 4-5 monolayers on Zr-Ni-Cu-Al metallic glass. Above this coverage, crystalline 3D clusters grow, in parallel with the flatter regions. The cluster density increases with decreasing temperature, indicating that the conditions of island nucleation are far-from-equilibrium. Within a simple model where clusters nucleate whenever two mobile Ag adatoms meet, the temperature-dependence of cluster density yields a (reasonable) upper limit for the value of the Ag diffusion barrier on top of the Ag wetting layer of 0.32 eV. Overall, this prototypical study suggests that it is possible to grow films of a bulk-crystalline metal that adopt the amorphous character of a glassy metal substrate, if film thickness is sufficiently low. Next, the first study of coarsening and decay of bilayer islands has been presented. The system was Ag on NiAl(110) in the temperature range from 185 K to 250 K. The coarsening behavior, has some similarities to that seen in the Ag(110) homoepitaxial system studied by Morgenstern and co-workers. At 185 K and 205 K, coarsening of Ag islands follows a Smoluchowski ripening pathway. At 205 K and 250 K, the terrace diffusion limited Ostwald ripening dominants. The experimental observed temperature for the transition from SR to OR is 205 K. The SR exhibits anisotropic island diffusion and the OR exhibits 1D decay of island length while keeping the corresponding island width constant. Third, LEED indicates that, up to about 6 BL (12 ML), the Ag film adopts the (110) structure on lattice matched NiAl(110) surface, supporting the previous assignment based upon island heights measured in STM. Starting at 4.5 to 6 BL, (111) diffraction pattern is detected. This is also in agreement with previous STM study. Careful examinations of the LEED patterns reveal the slight difference in lattice constants between bulk Ag and bulk NiAl. At last, we performed STM studies of Ni deposition on NiAl(110) in the temperature range from 200 K to 400 K. Ni forms 'dense' Ni(100)-like islands on NiAl(110) with a zig-zag shaped stripe feature which is probably due to strain relief. DFT analysis provides insights into the island growth shapes, which are rationalized by the thermodynamics and kinetics of the film growth process. For thick Ni films (coverage exceeding 6 ML), a Ni(111)-like structure developed. Traditional MF theory is applied to analyze island density at 200 K. Deviation from homogeneous nucleation behavior for island size distribution and island density reveals the presence of heterogeneous nucleation mediated by the Ni antisite point defects on NiAl(110) surface.

  20. Optical Properties of Zn(O,S) Thin Films Deposited by RF Sputtering, Atomic Layer Deposition, and Chemical Bath Deposition: Preprint

    SciTech Connect (OSTI)

    Li, J.; Glynn, S.; Christensen, S.; Mann, J.; To, B.; Ramanathan, K.; Noufi, R.; Furtak, T. E.; Levi, D.

    2012-06-01

    Zn(O,S) thin films 27 - 100 nm thick were deposited on glass or Cu(InxGa1-x)Se2/Molybdenum/glass with RF sputtering, atomic layer deposition, and chemical bath deposition.

  1. Ammonia release method for depositing metal oxides

    DOE Patents [OSTI]

    Silver, G.L.; Martin, F.S.

    1994-12-13

    A method is described for depositing metal oxides on substrates which is indifferent to the electrochemical properties of the substrates and which comprises forming ammine complexes containing metal ions and thereafter effecting removal of ammonia from the ammine complexes so as to permit slow precipitation and deposition of metal oxide on the substrates. 1 figure.

  2. Ammonia release method for depositing metal oxides

    DOE Patents [OSTI]

    Silver, Gary L.; Martin, Frank S.

    1994-12-13

    A method of depositing metal oxides on substrates which is indifferent to the electrochemical properties of the substrates and which comprises forming ammine complexes containing metal ions and thereafter effecting removal of ammonia from the ammine complexes so as to permit slow precipitation and deposition of metal oxide on the substrates.

  3. Atomic Layer Deposition | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic Layer Deposition New nanophase thin film materials with properties tailored to specifically meet the needs of industry New software simulates ALD over multiple length scale, saving industry time and money on developing specialized tools PDF icon Atomic_Layer_Deposition

  4. Chemical vapor deposition of mullite coatings

    DOE Patents [OSTI]

    Sarin, Vinod (Lexington, MA); Mulpuri, Rao (Boston, MA)

    1998-01-01

    This invention is directed to the creation of crystalline mullite coatings having uniform microstructure by chemical vapor deposition (CVD). The process comprises the steps of establishing a flow of reactants which will yield mullite in a CVD reactor, and depositing a crystalline coating from the reactant flow. The process will yield crystalline coatings which are dense and of uniform thickness.

  5. EGR Cooler Deposit Analysis | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Analysis of fouling and performance of exhaust gas recirculation (EGR) coolers as a function of EGR flow rate, inlet gas and coolant temperatures, soot level, and hydrocarbon concentration PDF icon deer11_lance.pdf More Documents & Publications Materials Issues Associated with EGR Systems (Agreement ID:18571) Microstructural Evolution of EGR Cooler Deposits Characterization of Field-Aged Exhaust Gas Recirculation Cooler Deposits

  6. Defect-Tolerant Diffusion Channels for Mg2+ Ions in Ribbon-Type Borates: Structural Insights into Potential Battery Cathodes MgVBO4 and Mgx Fe2–xB2O5

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bo, Shou-Hang; Grey, Clare P.; Khalifah, Peter G.

    2015-06-10

    The reversible room temperature intercalation of Mg2+ ions is difficult to achieve, but may offer substantial advantages in the design of next-generation batteries if this electrochemical process can be successfully realized. Two types of quadruple ribbon-type transition metal borates (MgxFe2-xB2O5 and MgVBO4) with high theoretical capacities (186 mAh/g and 360 mAh/g) have been synthesized and structurally characterized through the combined Rietveld refinement of synchrotron and time-of-flight neutron diffraction data. Neither MgVBO4 nor MgxFe2-xB2O5 can be chemically oxidized at room temperature, though Mg can be dynamically removed from the latter phase at elevated temperatures (approximately 200 - 500 °C). Findingsmore »show that Mg diffusion in the MgxFe2-xB2O5 structure is more facile for the inner two octahedral sites than for the two outer octahedral sites in the ribbons, a result supported by both the refined site occupancies after Mg removal and by bond valence sum difference map calculations of diffusion paths in the pristine material. Mg diffusion in this pyroborate MgxFe2-xB2O5 framework is also found to be tolerant to the presence of Mg/Fe disorder since Mg ions can diffuse through interstitial channels which bypass Fe-containing sites.« less

  7. Defect-Tolerant Diffusion Channels for Mg2+ Ions in Ribbon-Type Borates: Structural Insights into Potential Battery Cathodes MgVBO4 and Mgx Fe2–xB2O5

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bo, Shou-Hang; Grey, Clare P.; Khalifah, Peter G.

    2015-06-10

    The reversible room temperature intercalation of Mg2+ ions is difficult to achieve, but may offer substantial advantages in the design of next-generation batteries if this electrochemical process can be successfully realized. Two types of quadruple ribbon-type transition metal borates (MgxFe2-xB2O5 and MgVBO4) with high theoretical capacities (186 mAh/g and 360 mAh/g) have been synthesized and structurally characterized through the combined Rietveld refinement of synchrotron and time-of-flight neutron diffraction data. Neither MgVBO4 nor MgxFe2-xB2O5 can be chemically oxidized at room temperature, though Mg can be dynamically removed from the latter phase at elevated temperatures (approximately 200 - 500 °C). Findingsmore » show that Mg diffusion in the MgxFe2-xB2O5 structure is more facile for the inner two octahedral sites than for the two outer octahedral sites in the ribbons, a result supported by both the refined site occupancies after Mg removal and by bond valence sum difference map calculations of diffusion paths in the pristine material. Mg diffusion in this pyroborate MgxFe2-xB2O5 framework is also found to be tolerant to the presence of Mg/Fe disorder since Mg ions can diffuse through interstitial channels which bypass Fe-containing sites.« less

  8. Apparatus for gas-metal arc deposition

    DOE Patents [OSTI]

    Buhrmaster, Carol L.; Clark, Denis E.; Smartt, Herschel B.

    1991-01-01

    Apparatus for gas-metal arc deposition of metal, metal alloys, and metal matrix composites. The apparatus contains an arc chamber for confining a D.C. electrical arc discharge, the arc chamber containing an outlet orifice in fluid communication with a deposition chamber having a deposition opening in alignment with the orifice for depositing metal droplets on a coatable substrate. Metal wire is passed continuously into the arc chamber in alignment with the orifice. Electric arcing between the metal wire anode and the orifice cathode produces droplets of molten metal from the wire which pass through the orifice and into the deposition chamber for coating a substrate exposed at the deposition opening. When producing metal matrix composites, a suspenion of particulates in an inert gas enters the deposition chamber via a plurality of feed openings below and around the orifice so that reinforcing particulates join the metal droplets to produce a uniform mixture which then coats the exposed substrate with a uniform metal matrix composite.

  9. Method for gas-metal arc deposition

    DOE Patents [OSTI]

    Buhrmaster, Carol L.; Clark, Denis E.; Smartt, Herschel B.

    1990-01-01

    Method and apparatus for gas-metal arc deposition of metal, metal alloys, and metal matrix composites. The apparatus contains an arc chamber for confining a D.C. electrical arc discharge, the arc chamber containing an outlet orifice in fluid communication with a deposition chamber having a deposition opening in alignment wiht the orifice for depositing metal droplets on a coatable substrate. Metal wire is passed continuously into the arc chamber in alignment with the orifice. Electric arcing between the metal wire anode and the orifice cathode produces droplets of molten metal from the wire which pass through the orifice and into the deposition chamber for coating a substrate exposed at the deposition opening. When producing metal matrix composites, a suspension of particulates in an inert gas enters the deposition chamber via a plurality of feed openings below and around the orifice so that reinforcing particulates join the metal droplets to produce a uniform mixture which then coats the exposed substrate with a uniform metal matrix composite.

  10. Method for gas-metal arc deposition

    DOE Patents [OSTI]

    Buhrmaster, C.L.; Clark, D.E.; Smartt, H.B.

    1990-11-13

    Method and apparatus for gas-metal arc deposition of metal, metal alloys, and metal matrix composites are disclosed. The apparatus contains an arc chamber for confining a D.C. electrical arc discharge, the arc chamber containing an outlet orifice in fluid communication with a deposition chamber having a deposition opening in alignment with the orifice for depositing metal droplets on a coatable substrate. Metal wire is passed continuously into the arc chamber in alignment with the orifice. Electric arcing between the metal wire anode and the orifice cathode produces droplets of molten metal from the wire which pass through the orifice and into the deposition chamber for coating a substrate exposed at the deposition opening. When producing metal matrix composites, a suspension of particulates in an inert gas enters the deposition chamber via a plurality of feed openings below and around the orifice so that reinforcing particulates join the metal droplets to produce a uniform mixture which then coats the exposed substrate with a uniform metal matrix composite. 1 fig.

  11. Photobiomolecular deposition of metallic particles and films

    DOE Patents [OSTI]

    Hu, Zhong-Cheng

    2005-02-08

    The method of the invention is based on the unique electron-carrying function of a photocatalytic unit such as the photosynthesis system I (PSI) reaction center of the protein-chlorophyll complex isolated from chloroplasts. The method employs a photo-biomolecular metal deposition technique for precisely controlled nucleation and growth of metallic clusters/particles, e.g., platinum, palladium, and their alloys, etc., as well as for thin-film formation above the surface of a solid substrate. The photochemically mediated technique offers numerous advantages over traditional deposition methods including quantitative atom deposition control, high energy efficiency, and mild operating condition requirements.

  12. Polymer-assisted aqueous deposition of metal oxide films (Patent...

    Office of Scientific and Technical Information (OSTI)

    Polymer-assisted aqueous deposition of metal oxide films Title: Polymer-assisted aqueous deposition of metal oxide films An organic solvent-free process for deposition of metal ...

  13. Source replenishment device for vacuum deposition

    DOE Patents [OSTI]

    Hill, Ronald A. (Albuquerque, NM)

    1988-01-01

    A material source replenishment device for use with a vacuum deposition apparatus. The source replenishment device comprises an intermittent motion producing gear arrangement disposed within the vacuum deposition chamber. An elongated rod having one end operably connected to the gearing arrangement is provided with a multiarmed head at the opposite end disposed adjacent the heating element of the vacuum deposition apparatus. An inverted U-shaped source material element is releasably attached to the outer end of each arm member whereby said multiarmed head is moved to locate a first of said material elements above said heating element, whereupon said multiarmed head is lowered to engage said material element with the heating element and further lowered to release said material element on the heating element. After vaporization of said material element, second and subsequent material elements may be provided to the heating element without the need for opening the vacuum deposition apparatus to the atmosphere.

  14. Source replenishment device for vacuum deposition

    DOE Patents [OSTI]

    Hill, R.A.

    1986-05-15

    A material source replenishment device for use with a vacuum deposition apparatus is described. The source replenishment device comprises an intermittent motion producing gear arrangement disposed within the vacuum deposition chamber. An elongated rod having one end operably connected to the gearing arrangement is provided with a multiarmed head at the opposite end disposed adjacent the heating element of the vacuum deposition apparatus. An inverted U-shaped source material element is releasably attached to the outer end of each arm member whereby said multiarmed head is moved to locate a first of said material elements above said heating element, whereupon said multiarmed head is lowered to engage said material element with the heating element and further lowered to release said material element on the heating element. After vaporization of said material element, second and subsequent material elements may be provided to the heating element without the need for opening the vacuum deposition apparatus to the atmosphere.

  15. Polymer-assisted deposition of films

    DOE Patents [OSTI]

    McCleskey, Thomas M.; Burrell; Anthony K.; Jia; Quanxi; Lin; Yuan

    2009-10-20

    A polymer assisted deposition process for deposition of metal oxide films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films and the like. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  16. Polymer-assisted deposition of films

    DOE Patents [OSTI]

    McCleskey, Thomas M.; Burrell, Anthony K.; Jia, Quanxi; Lin, Yuan

    2008-04-29

    A polymer assisted deposition process for deposition of metal oxide films is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  17. Method of deposition by molecular beam epitaxy

    DOE Patents [OSTI]

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  18. Energy deposition in STARFIRE reactor components

    SciTech Connect (OSTI)

    Gohar, Y.; Brooks, J.N.

    1985-04-01

    The energy deposition in the STARFIRE commercial tokamak reactor was calculated based on detailed models for the different reactor components. The heat deposition and the 14 MeV neutron flux poloidal distributions in the first wall were obtained. The poloidal surface heat load distribution in the first wall was calculated from the plasma radiation. The Monte Carlo method was used for the calculation to allow an accurate modeling for the reactor geometry.

  19. Semiconductor assisted metal deposition for nanolithography applications

    DOE Patents [OSTI]

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2001-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  20. Semiconductor assisted metal deposition for nanolithography applications

    DOE Patents [OSTI]

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2002-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  1. Method of deposition by molecular beam epitaxy

    DOE Patents [OSTI]

    Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

    1995-01-10

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.

  2. Geology and Mineral Deposits of Churchill County, Nevada | Open...

    Open Energy Info (EERE)

    Mineral Deposits of Churchill County, Nevada Jump to: navigation, search OpenEI Reference LibraryAdd to library Report: Geology and Mineral Deposits of Churchill County, Nevada...

  3. Precursors for the polymer-assisted deposition of films (Patent...

    Office of Scientific and Technical Information (OSTI)

    A polymer assisted deposition process for deposition of metal oxide films is presented. The process includes solutions of one or more metal precursor and soluble polymers having ...

  4. Low-temperature plasma-deposited silicon epitaxial films: Growth...

    Office of Scientific and Technical Information (OSTI)

    Low-temperature plasma-deposited silicon epitaxial films: Growth and properties Citation Details In-Document Search Title: Low-temperature plasma-deposited silicon epitaxial films:...

  5. Development and Characterization of a Spray Deposited CNT/PVDF...

    Office of Scientific and Technical Information (OSTI)

    of a Spray Deposited CNTPVDF Thin Film. Citation Details In-Document Search Title: Development and Characterization of a Spray Deposited CNTPVDF Thin Film. Abstract not provided. ...

  6. Chrome Deposit Corporation and the University of Delaware IAC...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Chrome Deposit Corporation and the University of Delaware IAC: Another Energy Efficiency Success Story Chrome Deposit Corporation and the University of Delaware IAC: Another Energy ...

  7. Precursors for the polymer-assisted deposition of films (Patent...

    Office of Scientific and Technical Information (OSTI)

    Precursors for the polymer-assisted deposition of films Citation Details In-Document Search Title: Precursors for the polymer-assisted deposition of films A polymer assisted ...

  8. Detection and Control of Deposition on Pendant Tubes in Kraft...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Detection and Control of Deposition on Pendant Tubes in Kraft Chemical Recovery Boilers Detection and Control of Deposition on Pendant Tubes in Kraft Chemical Recovery Boilers ...

  9. Solvothermal Thin Film Deposition of Electron Blocking Layers...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solvothermal Thin Film Deposition of Electron Blocking Layers Home > Research > ANSER Research Highlights > Solvothermal Thin Film Deposition of Electron Blocking Layers...

  10. Spatial atomic layer deposition on flexible substrates using...

    Office of Scientific and Technical Information (OSTI)

    Spatial atomic layer deposition on flexible substrates using a modular rotating cylinder reactor Citation Details In-Document Search Title: Spatial atomic layer deposition on...

  11. Atomic Layer Deposition for Stabilization of Amorphous Silicon...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atomic Layer Deposition for Stabilization of Amorphous Silicon Anodes Atomic Layer Deposition for Stabilization of Amorphous Silicon Anodes 2012 DOE Hydrogen and Fuel Cells Program ...

  12. Eulerian CFD Models to Predict Thermophoretic Deposition of Soot...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Eulerian CFD Models to Predict Thermophoretic Deposition of Soot Particles in EGR Coolers Eulerian CFD Models to Predict Thermophoretic Deposition of Soot Particles in EGR Coolers ...

  13. CFD Analysis of Particle Deposition During DPF Filtration Processes...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Analysis of Particle Deposition During DPF Filtration Processes CFD Analysis of Particle Deposition During DPF Filtration Processes A 3-D DPF model is developed to predict ...

  14. Atomic Layer Deposition of Metal Sulfide Materials | Argonne...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic Layer Deposition of Metal Sulfide Materials Title Atomic Layer Deposition of Metal Sulfide Materials Publication Type Journal Article Year of Publication 2015 Authors...

  15. Crystal structures of two novel borate compounds MgInBO{sub 4} and MgIn{sub 7/8}B{sub 7/8}O{sub 29/8}

    SciTech Connect (OSTI)

    Li, H.K. [School of Materials Science and Engineering, Central South University, Changsha, Hunan 410083 (China); Science Center for Phase Diagram and Materials Design and Manufacture, Central South University, Changsha, Hunan 410083 (China); Cai, G.M., E-mail: caigemei@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha, Hunan 410083 (China); Science Center for Phase Diagram and Materials Design and Manufacture, Central South University, Changsha, Hunan 410083 (China); Fan, J.J.; Jin, Z.P. [School of Materials Science and Engineering, Central South University, Changsha, Hunan 410083 (China); Science Center for Phase Diagram and Materials Design and Manufacture, Central South University, Changsha, Hunan 410083 (China); Zhou, T.T.; Chen, X.L. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2013-06-15

    Two novel borate compounds MgInBO{sub 4} and MgIn{sub 7/8}B{sub 7/8}O{sub 29/8}, have been synthesized via solid-state reactions, and their crystal structures have been solved and refined from powder X-ray diffraction data. The compound MgInBO{sub 4}, which was obtained at 1190 C, belongs to the warwickite family. It crystallizes in the Pnma space group (no. 62) with a=9.5443(1) , b=3.2771(1) , c=9.5228(1) , and Z=4. The fundamental building units are liner Mg(In)O{sub 6}[In(Mg)]{sub 2}O{sub 10}Mg(In)O{sub 6} chains and isolated BO{sub 3} triangles. The low-temperature phase, MgIn{sub 7/8}B{sub 7/8}O{sub 29/8}, whose crystal structure is solved ab initio by the charge-flipping method with standard chemical formula MgInBO{sub 4}, was prepared at 1080 C. It crystallizes in the P12{sub 1}/n1 space group (no. 14) with a=17.0976(1) , b=3.2504(1) , c=5.3387(1) , ?=96.0829(3), and Z=4. The structure of MgIn{sub 7/8}B{sub 7/8}O{sub 29/8} contains [In(2)/Mg(2)]{sub 2}O{sub 10} groups, MgO{sub 6}InO{sub 6} infinite ribbons and isolated BO{sub 3} triangles. The experiments and the differential thermal analysis (DTA) show the decompositions of MgInBO{sub 4} and MgIn{sub 7/8}B{sub 7/8}O{sub 29/8} happen at about 1220 C and 1180 C, respectively. The comparative crystal chemistry from MgIn{sub 7/8}B{sub 7/8}O{sub 29/8} to MgInBO{sub 4} has been discussed. Infrared spectra and UVvis diffuse reflectance spectra of MgInBO{sub 4} and MgIn{sub 7/8}B{sub 7/8}O{sub 29/8} were measured. - Graphical abstract: The structural transformation from the monoclinic MgIn{sub 7/8}B{sub 7/8}O{sub 29/8} (P12{sub 1}/n1) to the orthorhombic MgInBO{sub 4} (Pnma). - Highlights: Two novel borate compounds MgInBO{sub 4} and MgIn{sub 7/8}B{sub 7/8}O{sub 29/8} have been synthesized via solid-state reactions for the first time. The crystal structures of MgInBO{sub 4} and MgIn{sub 7/8}B{sub 7/8}O{sub 29/8} have been solved and refined from powder X-ray diffraction data. The possible crystal chemical analysis from MgIn{sub 7/8}B{sub 7/8}O{sub 29/8} to MgInBO{sub 4} is discussed. Infrared spectra and UVvis diffuse reflectance spectra of MgInBO{sub 4} and MgIn{sub 7/8}B{sub 7/8}O{sub 29/8} have been measured.

  16. Hydrocarbon and Deposit Morphology Effects on EGR Cooler Deposit Stability and Removal

    Broader source: Energy.gov [DOE]

    This paper reports on studies carried out at ORNL to examine the shear force required to remove particles from a well-developed EGR cooler deposit.

  17. Apparatus for laser assisted thin film deposition

    DOE Patents [OSTI]

    Warner, Bruce E.; McLean, II, William

    1996-01-01

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

  18. Patterns of permeability in eolian deposits

    SciTech Connect (OSTI)

    Goggin, D.J.; Chandler, M.A.; Kocurek, G.; Lake, L.W.

    1988-06-01

    The eolian, Jurassic Page sandstone of northeastern Arizona is marked by a highly ordered heterogeneity. The heterogeneity is expressed by the intricate association of stratification types, which are a direct result of the depositional processes. The dominant stratification types in eolian reservoirs are grainflow, grainfall, and wind-ripple deposits, which form on the lee faces of migrating dunes; interdune deposits, which form between migrating dunes; and extra-erg deposits, which occur sporadically when other depositional environments encroach upon an eolian system. These stratification types each have a unique permeability range, which implies that the fluid migration routes in eolian reservoirs will be dictated by the geometry and types of stratification present. One of the most important aspects of this study is the correlation of qualitative geologic descriptions with quantitative variables such as permeability. About 2,000 measurements were made with a field minipermeameter on an outcrop of the Page sandstone. These data show that three distinct permeability modes directly relate to the different stratification types.

  19. Apparatus for laser assisted thin film deposition

    DOE Patents [OSTI]

    Warner, B.E.; McLean, W. II

    1996-02-13

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

  20. Microsoft Word - Deposition Request Form Rev10-12.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Substrate Description ( substrate provided by user) Total Number of Substrates: Deposition Specifications Film FunctionApplication:**...

  1. Method and apparatus for conducting variable thickness vapor deposition

    DOE Patents [OSTI]

    Nesslage, G.V.

    1984-08-03

    A method of vapor depositing metal on a substrate in variable thickness comprises conducting the deposition continuously without interruption to avoid formation of grain boundaries. To achieve reduced deposition in specific regions a thin wire or ribbon blocking body is placed between source and substrate to partially block vapors from depositing in the region immediately below.

  2. Chemical vapor deposition of group IIIB metals

    DOE Patents [OSTI]

    Erbil, Ahmet

    1989-01-01

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) ##STR1## where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions.

  3. Chemical vapor deposition of group IIIB metals

    DOE Patents [OSTI]

    Erbil, A.

    1989-11-21

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

  4. Forming aspheric optics by controlled deposition

    DOE Patents [OSTI]

    Hawryluk, Andrew M.

    1998-01-01

    An aspheric optical element formed by depositing material onto a spherical surface of an optical element by controlled deposition to form an aspheric surface of desired shape. A reflecting surface, single or multi-layer, can then be formed on the aspheric surface by evaporative or sputtering techniques. Aspheric optical elements are suitable for deep ultra-violet (UV) and x-ray wavelengths. The reflecting surface may, for example, be a thin (.about.100 nm) layer of aluminum, or in some cases the deposited modifying layer may function as the reflecting surface. For certain applications, multi-layer reflective surfaces may be utilized, such as chromium-carbon or tungsten-carbon multi-layer, with the number of layers and thickness being determined by the intended application.

  5. Forming aspheric optics by controlled deposition

    DOE Patents [OSTI]

    Hawryluk, A.M.

    1998-04-28

    An aspheric optical element is disclosed formed by depositing material onto a spherical surface of an optical element by controlled deposition to form an aspheric surface of desired shape. A reflecting surface, single or multi-layer, can then be formed on the aspheric surface by evaporative or sputtering techniques. Aspheric optical elements are suitable for deep ultra-violet (UV) and x-ray wavelengths. The reflecting surface may, for example, be a thin ({approx}100 nm) layer of aluminum, or in some cases the deposited modifying layer may function as the reflecting surface. For certain applications, multi-layer reflective surfaces may be utilized, such as chromium-carbon or tungsten-carbon multi-layer, with the number of layers and thickness being determined by the intended application. 4 figs.

  6. Line-of-sight deposition method

    DOE Patents [OSTI]

    Patten, James W.; McClanahan, Edwin D.; Bayne, Michael A.

    1981-01-01

    A line-of-sight method of depositing a film having substantially 100% of theoretical density on a substrate. A pressure vessel contains a target source having a surface thereof capable of emitting particles therefrom and a substrate with the source surface and the substrate surface positioned such that the source surface is substantially parallel to the direction of the particles impinging upon the substrate surface, the distance between the most remote portion of the substrate surface receiving the particles and the source surface emitting the particles in a direction parallel to the substrate surface being relatively small. The pressure in the vessel is maintained less than about 5 microns to prevent scattering and permit line-of-sight deposition. By this method the angles of incidence of the particles impinging upon the substrate surface are in the range of from about 45.degree. to 90.degree. even when the target surface area is greatly expanded to increase the deposition rate.

  7. Line-of-sight deposition method

    DOE Patents [OSTI]

    Patten, J.W.; McClanahan, E.D.; Bayne, M.A.

    1980-04-16

    A line-of-sight method of depositing a film having substantially 100% of theoretical density on a substrate. A pressure vessel contains a target source having a surface thereof capable of emitting particles therefrom and a substrate with the source surface and the substrate surface positioned such that the source surface is substantially parallel to the direction of the particles impinging upon the substrate surface, the distance between the most remote portion of the substrate surface receiving the particles and the source surface emitting the particles in a direction parallel to the substrate surface being relatively small. The pressure in the vessel is maintained less than about 5 microns to prevent scattering and permit line-of-sight deposition. By this method the angles of incidence of the particles impinging upon the substrate surface are in the range of from about 45/sup 0/ to 90/sup 0/ even when the target surface area is greatly expanded to increase the deposition rate.

  8. Supplemental heating of deposition tooling shields

    DOE Patents [OSTI]

    Ohlhausen, James A. (Albuquerque, NM); Peebles, Diane E. (Albuquerque, NM); Hunter, John A. (Albuquerque, NM); Eckelmeyer, Kenneth H. (Albuquerque, NM)

    2000-01-01

    A method of reducing particle generation from the thin coating deposited on the internal surfaces of a deposition chamber which undergoes temperature variation greater than 100.degree. C. comprising maintaining the temperature variation of the internal surfaces low enough during the process cycle to keep thermal expansion stresses between the coating and the surfaces under 500 MPa. For titanium nitride deposited on stainless steel, this means keeping temperature variations under approximately 70.degree. C. in a chamber that may be heated to over 350.degree. C. during a typical processing operation. Preferably, a supplemental heater is mounted behind the upper shield and controlled by a temperature sensitive element which provides feedback control based on the temperature of the upper shield.

  9. Glow discharge plasma deposition of thin films

    DOE Patents [OSTI]

    Weakliem, Herbert A. (Pennington, NJ); Vossen, Jr., John L. (Bridgewater, NJ)

    1984-05-29

    A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

  10. Liquid injection plasma deposition method and apparatus

    DOE Patents [OSTI]

    Kong, Peter C.; Watkins, Arthur D.

    1999-01-01

    A liquid injection plasma torch deposition apparatus for depositing material onto a surface of a substrate may comprise a plasma torch for producing a jet of plasma from an outlet nozzle. A plasma confinement tube having an inlet end and an outlet end and a central bore therethrough is aligned with the outlet nozzle of the plasma torch so that the plasma jet is directed into the inlet end of the plasma confinement tube and emerges from the outlet end of the plasma confinement tube. The plasma confinement tube also includes an injection port transverse to the central bore. A liquid injection device connected to the injection port of the plasma confinement tube injects a liquid reactant mixture containing the material to be deposited onto the surface of the substrate through the injection port and into the central bore of the plasma confinement tube.

  11. Liquid injection plasma deposition method and apparatus

    DOE Patents [OSTI]

    Kong, P.C.; Watkins, A.D.

    1999-05-25

    A liquid injection plasma torch deposition apparatus for depositing material onto a surface of a substrate may comprise a plasma torch for producing a jet of plasma from an outlet nozzle. A plasma confinement tube having an inlet end and an outlet end and a central bore therethrough is aligned with the outlet nozzle of the plasma torch so that the plasma jet is directed into the inlet end of the plasma confinement tube and emerges from the outlet end of the plasma confinement tube. The plasma confinement tube also includes an injection port transverse to the central bore. A liquid injection device connected to the injection port of the plasma confinement tube injects a liquid reactant mixture containing the material to be deposited onto the surface of the substrate through the injection port and into the central bore of the plasma confinement tube. 8 figs.

  12. Method for deposition of a conductor in integrated circuits

    DOE Patents [OSTI]

    Creighton, J.R.; Dominguez, F.; Johnson, A.W.; Omstead, T.R.

    1997-09-02

    A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten. 2 figs.

  13. Method for deposition of a conductor in integrated circuits

    DOE Patents [OSTI]

    Creighton, J. Randall; Dominguez, Frank; Johnson, A. Wayne; Omstead, Thomas R.

    1997-01-01

    A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten.

  14. Polymer-assisted deposition of films

    DOE Patents [OSTI]

    McCleskey,Thomas M.; Burrell,Anthony K.; Jia,Quanxi; Lin,Yuan

    2012-02-28

    A polymer assisted deposition process for deposition of metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be conformal on a variety of substrates including non-planar substrates. In some instances, the films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  15. Ruthenium / aerogel nanocomposits via Atomic Layer Deposition

    SciTech Connect (OSTI)

    Biener, J; Baumann, T F; Wang, Y; Nelson, E J; Kucheyev, S O; Hamza, A V; Kemell, M; Ritala, M; Leskela, M

    2006-08-28

    We present a general approach to prepare metal/aerogel nanocomposites via template directed atomic layer deposition (ALD). In particular, we used a Ru ALD process consisting of alternating exposures to bis(cyclopentadienyl)ruthenium (RuCp{sub 2}) and air at 350 C to deposit metallic Ru nanoparticles on the internal surfaces of carbon and silica aerogels. The process does not affect the morphology of the aerogel template and offers excellent control over metal loading by simply adjusting the number of ALD cycles. We also discuss the limitations of our ALD approach, and suggest ways to overcome these.

  16. Exploring the electronic structure and optical properties of the quaternary selenide compound, Ba{sub 4}Ga{sub 4}SnSe{sub 12}: For photovoltaic applications

    SciTech Connect (OSTI)

    Azam, Sikander; Khan, Saleem Ayaz; Goumri-Said, Souraya

    2015-09-15

    Due to huge demand on discovering new materials for energy, we used first-principle calculations to explore the electronic structure and optical properties of a recent quaternary selenide, namely Ba{sub 4}Ga{sub 4}SnSe{sub 12}. The electronic structure and the optical properties of Ba{sub 4}Ga{sub 4}SnSe{sub 12} were calculated through a reliable approach of Engle Vosko-GGA (EV-GGA). We found that Ba{sub 4}Ga{sub 4}SnSe{sub 12} has a direct band gap of 2.14 eV positioned at Γ. Acquiring the fundamental characteristics of Ba{sub 4}Ga{sub 4}SnSe{sub 12,} we studied the linear optical properties like dielectric function in the energy range of 0–14 eV. From the dielectric function we noticed a weak directional anisotropy for the two components. The absorption spectrum indicates the possibility of greater multiple direct and indirect inter-band transitions in the visible regions and shows similar behavior with experimental spectrum. Ba{sub 4}Ga{sub 4}SnSe{sub 12} can be used as shielding material from UV radiations. Present study predicts that the Ba{sub 4}Ga{sub 4}SnSe{sub 12} is promising for photovoltaic applications due to their high absorption of solar radiations and photoconductivity in the visible range. - Graphical abstract: Interesting quaternary selenide compound, Ba{sub 4}Ga{sub 4}SnSe{sub 12}, for photovoltaic applications. - Highlights: • Ba{sub 4}Ga{sub 4}SnSe{sub 12} is a quaternary selenide designed for PV and thermoelectric. • Ba{sub 4}Ga{sub 4}SnSe{sub 12} has a direct band gap of 2.14 eV. • Ba{sub 4}Ga{sub 4}SnSe{sub 12,} has a maximum reflectivity in the visible and UV regions.

  17. Dual ion beam assisted deposition of biaxially textured template layers

    DOE Patents [OSTI]

    Groves, James R.; Arendt, Paul N.; Hammond, Robert H.

    2005-05-31

    The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

  18. Chemical vapor deposition of aluminum oxide

    DOE Patents [OSTI]

    Gordon, Roy; Kramer, Keith; Liu, Xinye

    2000-01-01

    An aluminum oxide film is deposited on a heated substrate by CVD from one or more alkylaluminum alkoxide compounds having composition R.sub.n Al.sub.2 (OR').sub.6-n, wherein R and R' are alkyl groups and n is in the range of 1 to 5.

  19. Plasma deposition of amorphous metal alloys

    DOE Patents [OSTI]

    Hays, Auda K. (Albuquerque, NM)

    1986-01-01

    Amorphous metal alloy coatings are plasma-deposited by dissociation of vapors of organometallic compounds and metalloid hydrides in the presence of a reducing gas, using a glow discharge. Tetracarbonylnickel, phosphine, and hydrogen constitute a typical reaction mixture of the invention, yielding a NiPC alloy.

  20. Atomic layer deposition of nanoporous biomaterials.

    SciTech Connect (OSTI)

    Narayan, R. J.; Adiga, S. P.; Pellin, M. J.; Curtiss, L. A.; Stafslien, S.; Chisholm, B.; Monteiro-Riviere, N. A.; Brigmon, R. L.; Elam, J. W.; Univ. of North Carolina; North Carolina State Univ.; Eastman Kodak Co.; North Dakota State Univ.; SRL

    2010-03-01

    Due to its chemical stability, uniform pore size, and high pore density, nanoporous alumina is being investigated for use in biosensing, drug delivery, hemodialysis, and other medical applications. In recent work, we have examined the use of atomic layer deposition for coating the surfaces of nanoporous alumina membranes. Zinc oxide coatings were deposited on nanoporous alumina membranes using atomic layer deposition. The zinc oxide-coated nanoporous alumina membranes demonstrated antimicrobial activity against Escherichia coli and Staphylococcus aureus bacteria. These results suggest that atomic layer deposition is an attractive technique for modifying the surfaces of nanoporous alumina membranes and other nanostructured biomaterials. Nanoporous alumina, also known as anodic aluminum oxide (AAO), is a nanomaterial that exhibits several unusual properties, including high pore densities, straight pores, small pore sizes, and uniform pore sizes. In 1953, Keller et al. showed that anodizing aluminum in acid electrolytes results in a thick layer of nearly cylindrical pores, which are arranged in a close-packed hexagonal cell structure. More recently, Matsuda & Fukuda demonstrated preparation of highly ordered platinum and gold nanohole arrays using a replication process. In this study, a negative structure of nanoporous alumina was initially fabricated and a positive structure of a nanoporous metal was subsequently fabricated. Over the past fifteen years, nanoporous alumina membranes have been used as templates for growth of a variety of nanostructured materials, including nanotubes, nanowires, nanorods, and nanoporous membranes.

  1. Defect distributions in weld-deposited cladding

    SciTech Connect (OSTI)

    Li, Y.Y.; Mabe, W.R.

    1998-11-01

    Defect distributions in stainless steel and nickel-chromium alloy weld-deposited cladding over a low alloy steel base were characterized by destructive evaluation (DE). An evaluation of the observed defects was conducted to characterize the defects by type or classification. Size distributions of cladding defect types were developed from the information obtained. This paper presents the results of the cladding evaluation.

  2. Plasma deposition of amorphous metal alloys

    DOE Patents [OSTI]

    Hays, A.K.

    1979-07-18

    Amorphous metal alloy coatings are plasma-deposited by dissociation of vapors of organometallic compounds and metalloid hydrides in the presence of a reducing gas, using a glow discharge. Tetracarbonylnickel, phosphine, and hydrogen constitute a typical reaction mixture of the invention, yielding a NiPC alloy.

  3. Low-temperature grown quaternary Heusler-compound Co{sub 2}Mn{sub 1-x}Fe{sub x}Si films on Ge(111)

    SciTech Connect (OSTI)

    Yamada, S.; Murakami, T.; Hamaya, K.; Varaprasad, B.; Rajanikanth, A.; Hono, K.; Takahashi, Y. K.; Miyao, M.

    2011-04-01

    Highly ordered quaternary Co{sub 2}Mn{sub 1-x}Fe{sub x}Si films on Ge(111) are explored for spintronic device applications on Si-large-scale integrated circuit (LSI) platform. By using low-temperature molecular beam epitaxy techniques, relatively large magnetic moments are demonstrated for x between 0.50 and 1.0 despite extremely low temperature growth of 130 deg. C. Also, L2{sub 1}-ordered crystal structures can be realized even on a group-IV semiconductor substrate, Ge, compatible with Si-LSI technologies. By the point contact Andreev reflection method, the spin polarization of Co{sub 2}Mn{sub 0.5}Fe{sub 0.5}Si films is estimated to be P= 0.58 {+-} 0.02. We believe that this study will be a first step for integration of high-performance spintronic applications with next ultra LSI.

  4. AGING EFFECTS ON THE PROPERTIES OF IMIDAZOLIUM, QUATERNARY AMMONIUM, PYRIDINIUM AND PYRROLIDINIUM-BASED IONIC LIQUIDS USED IN FUEL AND ENERGY PRODUCTION

    SciTech Connect (OSTI)

    Fox, E.

    2013-08-13

    Ionic liquids are often cited for their excellent thermal stability, a key property for their use as solvents and in the chemical processing of biofuels. However, there has been little supporting data on the long term aging effect of temperature on these materials. Imizadolium, quaternary ammonium, pyridinium, and pyrrolidnium-based ionic liquids with the bis(trifluoromethylsulfonyl)imide and bis(perfluoroethylsulfonyl)imide anions were aged for 2520 hours (15 weeks) at 200�C in air to determine the effects of an oxidizing environment on their chemical structure and thermal stability over time. It was found that the minor changes in the cation chemistry could greatly affect the properties of the ILs over time.

  5. Selectivity Control in Synergistic Liquid-Liquid Anion Exchange of Univalent Anions via Structure-Specific Cooperativity between Quaternary Ammonium Cations and Anion Receptors

    SciTech Connect (OSTI)

    Borman, Christopher J; Bonnesen, Peter V; Moyer, Bruce A

    2012-01-01

    Two anion receptors enhance liquid-liquid anion exchange when added to quaternary alkylammonium chloride anion exchangers, but with a striking dependence upon the structure of the alkylammonium cation. Two anion receptors were investigated, meso-octamethylcalix[4]pyrrole (C4P) and the bisthiourea tweezer 1,1'-(propane-1,3-diyl)bis(3-(4-sec-butylphenyl)thiourea (BTU). C4P has the unique ability in its cone anion-binding conformation to accept an appropriately sized electropositive species in the resulting cup formed by its four electron-rich pyrrole groups, while BTU is not expected to be predisposed for a specific host-guest interaction with the quaternary ammonium cations. It was therefore hypothesized that synergism between C4P and methyltri(C8,10)alkylammonium chloride (Aliquat 336) would be uniquely pronounced owing to insertion of the methyl group of the Aliquat cation into the C4P cup, and we present herein data supporting this expectation. While synergism is comparatively weak for both exchangers with the BTU receptor, synergism between C4P and Aliquat 336 is indeed so strong that anion exchange prefers chloride over more extractable nitrate and trifluoroacetate, effectively overcoming the ubiquitous Hofmeister bias. A thermochemical analysis of synergistic anion exchange has been provided for the first time, unraveling the observed selectivity behavior and resulting in the estimation of binding constants for C4P with the ion pairs of A336+ with Cl , Br , OAcF3 , NO3 , and I . The uniquely strong positive cooperativity between A336 and C4P underscores the advantage of a supramolecular approach in the design of synergistic anion exchange systems.

  6. Forest Products | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Borate Autocausticizing Screenable Pressure-Sensitive Adhesives MultiWave(tm) Automated Sorting System for Efficient Recycling Detection and Control of Deposition on Pendant Tubes ...

  7. Carrier localization and in-situ annealing effect on quaternary Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaAs quantum wells grown by Sb pre-deposition

    SciTech Connect (OSTI)

    Thoma, Jiri; Huyet, Guillaume; Tyndall National Institute, UCC, Lee Maltings, Cork ; Liang, Baolai; Huffaker, Diana L.; Lewis, Liam; Hegarty, Stephen P.

    2013-03-18

    Using temperature-dependent photoluminescence spectroscopy, we have investigated and compared intrinsic InGaAs, intrinsic GaInAsSb, and p-i-n junction GaInAsSb quantum wells (QWs) embedded in GaAs barriers. Strong carrier localization inside the intrinsic GaInAsSb/GaAs QW has been observed together with its decrease inside the p-i-n sample. This is attributed to the effect of an in-situ annealing during the top p-doped AlGaAs layer growth at an elevated temperature of 580 Degree-Sign C, leading to Sb-atom diffusion and even atomic redistribution. High-resolution X-ray diffraction measurements and the decrease of both maximum localization energy and full delocalization temperature in the p-i-n QW sample further corroborated this conclusion.

  8. Method for depositing layers of high quality semiconductor material

    DOE Patents [OSTI]

    Guha, Subhendu; Yang, Chi C.

    2001-08-14

    Plasma deposition of substantially amorphous semiconductor materials is carried out under a set of deposition parameters which are selected so that the process operates near the amorphous/microcrystalline threshold. This threshold varies as a function of the thickness of the depositing semiconductor layer; and, deposition parameters, such as diluent gas concentrations, must be adjusted as a function of layer thickness. Also, this threshold varies as a function of the composition of the depositing layer, and in those instances where the layer composition is profiled throughout its thickness, deposition parameters must be adjusted accordingly so as to maintain the amorphous/microcrystalline threshold.

  9. Filtered cathodic arc deposition apparatus and method

    DOE Patents [OSTI]

    Krauss, Alan R.

    1999-01-01

    A filtered cathodic arc deposition method and apparatus for the production of highly dense, wear resistant coatings which are free from macro particles. The filtered cathodic arc deposition apparatus includes a cross shaped vacuum chamber which houses a cathode target having an evaporable surface comprised of the coating material, means for generating a stream of plasma, means for generating a transverse magnetic field, and a macro particle deflector. The transverse magnetic field bends the generated stream of plasma in the direction of a substrate. Macro particles are effectively filtered from the stream of plasma by traveling, unaffected by the transverse magnetic field, along the initial path of the plasma stream to a macro particle deflector. The macro particle deflector has a preformed surface which deflects macro particles away from the substrate.

  10. Process for depositing Cr-bearing layer

    DOE Patents [OSTI]

    Ellis, Timothy W.; Lograsso, Thomas A.; Eshelman, Mark A.

    1995-05-09

    A method of applying a Cr-bearing layer to a substrate, comprises introducing an organometallic compound, in vapor or solid powder form entrained in a carrier gas to a plasma of an inductively coupled plasma torch or device to thermally decompose the organometallic compound and contacting the plasma and the substrate to be coated so as to deposit the Cr-bearing layer on the substrate. A metallic Cr, Cr alloy or Cr compound such as chromium oxide, nitride and carbide can be provided on the substrate. Typically, the organometallic compound is introduced to an inductively coupled plasma torch that is disposed in ambient air so to thermally decompose the organometallic compound in the plasma. The plasma is directed at the substrate to deposit the Cr-bearing layer or coating on the substrate.

  11. Ultrashort pulse laser deposition of thin films

    DOE Patents [OSTI]

    Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

    2002-01-01

    Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

  12. Surface acoustic wave dust deposition monitor

    DOE Patents [OSTI]

    Fasching, G.E.; Smith, N.S. Jr.

    1988-02-12

    A system is disclosed for using the attenuation of surface acoustic waves to monitor real time dust deposition rates on surfaces. The system includes a signal generator, a tone-burst generator/amplifier connected to a transmitting transducer for converting electrical signals into acoustic waves. These waves are transmitted through a path defining means adjacent to a layer of dust and then, in turn, transmitted to a receiving transducer for changing the attenuated acoustic wave to electrical signals. The signals representing the attenuated acoustic waves may be amplified and used in a means for analyzing the output signals to produce an output indicative of the dust deposition rates and/or values of dust in the layer. 8 figs.

  13. Methods for patterned deposition on a substrate

    DOE Patents [OSTI]

    Rye, Robert R. (Albuquerque, NM); Ricco, Antonio J. (Albuquerque, NM); Hampden-Smith, M. J. (Albuquerque, NM); Kodas, T. T. (Albuquerque, NM)

    1995-01-01

    A method is described for patterned depositions of a material onto a substrate. A surface of a polymeric substrate is first etched so as to form an etched layer having enhanced adhesions characteristics and then selected portions of the etched layer are removed so as to define a pattern having enhanced and diminished adhesion characteristics for the deposition of a conductor onto the remaining etched layer. In one embodiment, a surface of a PTFE substrate is chemically etched so as to improve the adhesion of copper thereto. Thereafter, selected portions of the etched surface are irradiated with a laser beam so as to remove the etched selected portions of the etched surface and form patterns of enhanced and diminished adhesion of copper thereto.

  14. Methods for patterned deposition on a substrate

    DOE Patents [OSTI]

    Rye, R.R.; Ricco, A.J.; Hampden-Smith, M.J.; Kodas, T.T.

    1995-01-10

    A method is described for patterned depositions of a material onto a substrate. A surface of a polymeric substrate is first etched so as to form an etched layer having enhanced adhesions characteristics and then selected portions of the etched layer are removed so as to define a pattern having enhanced and diminished adhesion characteristics for the deposition of a conductor onto the remaining etched layer. In one embodiment, a surface of a PTFE substrate is chemically etched so as to improve the adhesion of copper thereto. Thereafter, selected portions of the etched surface are irradiated with a laser beam so as to remove the etched selected portions of the etched surface and form patterns of enhanced and diminished adhesion of copper thereto. 5 figures.

  15. Substrate heater for thin film deposition

    DOE Patents [OSTI]

    Foltyn, Steve R. (111 Beryl St., Los Alamos, NM 87544)

    1996-01-01

    A substrate heater for thin film deposition of metallic oxides upon a target substrate configured as a disk including means for supporting in a predetermined location a target substrate configured as a disk, means for rotating the target substrate within the support means, means for heating the target substrate within the support means, the heating means about the support means and including a pair of heating elements with one heater element situated on each side of the predetermined location for the target substrate, with one heater element defining an opening through which desired coating material can enter for thin film deposition and with the heating means including an opening slot through which the target substrate can be entered into the support means, and, optionally a means for thermal shielding of the heating means from surrounding environment is disclosed.

  16. Process for depositing Cr-bearing layer

    DOE Patents [OSTI]

    Ellis, T.W.; Lograsso, T.A.; Eshelman, M.A.

    1995-05-09

    A method of applying a Cr-bearing layer to a substrate, comprises introducing an organometallic compound, in vapor or solid powder form entrained in a carrier gas to a plasma of an inductively coupled plasma torch or device to thermally decompose the organometallic compound and contacting the plasma and the substrate to be coated so as to deposit the Cr-bearing layer on the substrate. A metallic Cr, Cr alloy or Cr compound such as chromium oxide, nitride and carbide can be provided on the substrate. Typically, the organometallic compound is introduced to an inductively coupled plasma torch that is disposed in ambient air so to thermally decompose the organometallic compound in the plasma. The plasma is directed at the substrate to deposit the Cr-bearing layer or coating on the substrate. 7 figs.

  17. Apparatus and method for photochemical vapor deposition

    DOE Patents [OSTI]

    Jackson, Scott C.; Rocheleau, Richard E.

    1987-03-31

    A photochemical vapor deposition apparatus includes a reactor housing having a window in one wall above a reaction chamber in the housing. A transparent curtain divides the reaction chamber into a reaction zone and a flush zone. At least one substrate is mounted in the reaction zone in light communication with the window so that ultraviolet radiation may penetrate through the window into the reaction zone. The window is kept clear by a gas flowing through the flush zone.

  18. DEPOSITION OF METAL ON NONMETAL FILAMENT

    DOE Patents [OSTI]

    Magel, T.T.

    1959-02-10

    A method is described for purifying metallic uranium by passing a halogen vapor continuously over the impure uranium to form uranium halide vapor and immediately passing the halide vapor into contact with a nonmetallic refractory surface which is at a temperature above the melting point of uranium metal. The halide is decomposed at the heated surface depositing molten metal, which collects and falls into a receiver below.

  19. Electrostatic force assisted deposition of graphene

    DOE Patents [OSTI]

    Liang, Xiaogan

    2011-11-15

    An embodiment of a method of depositing graphene includes bringing a stamp into contact with a substrate over a contact area. The stamp has at least a few layers of the graphene covering the contact area. An electric field is developed over the contact area. The stamp is removed from the vicinity of the substrate which leaves at least a layer of the graphene substantially covering the contact area.

  20. Stationary phase deposition based on onium salts

    DOE Patents [OSTI]

    Wheeler, David R.; Lewis, Patrick R.; Dirk, Shawn M.; Trudell, Daniel E.

    2008-01-01

    Onium salt chemistry can be used to deposit very uniform thickness stationary phases on the wall of a gas chromatography column. In particular, the stationary phase can be bonded to non-silicon based columns, especially microfabricated metal columns. Non-silicon microfabricated columns may be manufactured and processed at a fraction of the cost of silicon-based columns. In addition, the method can be used to phase-coat conventional capillary columns or silicon-based microfabricated columns.

  1. Nanotube array controlled carbon plasma deposition

    SciTech Connect (OSTI)

    Qian, Shi; Cao, Huiliang; Liu, Xuanyong; Ding, Chuanxian

    2013-06-17

    Finding approaches to control the elementary processes of plasma-solid interactions and direct the fluxes of matter at nano-scales becomes an important aspect in science. This letter reports that, by taking advantages of the spacing characteristics of discrete TiO{sub 2} nanotube arrays, the flying trajectories and the subsequent implantation and deposition manner of energetic carbon ions can be directed and controlled to fabricate hollow conical arrays. The study provides an alternative method for plasma nano-manufacturing.

  2. Chemical deposition methods using supercritical fluid solutions

    DOE Patents [OSTI]

    Sievers, Robert E.; Hansen, Brian N.

    1990-01-01

    A method for depositing a film of a desired material on a substrate comprises dissolving at least one reagent in a supercritical fluid comprising at least one solvent. Either the reagent is capable of reacting with or is a precursor of a compound capable of reacting with the solvent to form the desired product, or at least one additional reagent is included in the supercritical solution and is capable of reacting with or is a precursor of a compound capable of reacting with the first reagent or with a compound derived from the first reagent to form the desired material. The supercritical solution is expanded to produce a vapor or aerosol and a chemical reaction is induced in the vapor or aerosol so that a film of the desired material resulting from the chemical reaction is deposited on the substrate surface. In an alternate embodiment, the supercritical solution containing at least one reagent is expanded to produce a vapor or aerosol which is then mixed with a gas containing at least one additional reagent. A chemical reaction is induced in the resulting mixture so that a film of the desired material is deposited.

  3. Precursors for the polymer-assisted deposition of films (Patent...

    Office of Scientific and Technical Information (OSTI)

    Precursors for the polymer-assisted deposition of films Citation Details In-Document Search Title: Precursors for the polymer-assisted deposition of films You are accessing a ...

  4. Solvothermal Thin Film Deposition of Electron Blocking Layers | ANSER

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Center | Argonne-Northwestern National Laboratory Solvothermal Thin Film Deposition of Electron Blocking Layers Home > Research > ANSER Research Highlights > Solvothermal Thin Film Deposition of Electron Blocking Layers

  5. Microstructure, Phase Formation, and Stress of Reactively-Deposited Metal

    Office of Scientific and Technical Information (OSTI)

    Hydride Thin Films (Technical Report) | SciTech Connect Microstructure, Phase Formation, and Stress of Reactively-Deposited Metal Hydride Thin Films Citation Details In-Document Search Title: Microstructure, Phase Formation, and Stress of Reactively-Deposited Metal Hydride Thin Films This document summarizes research of reactively deposited metal hydride thin films and their properties. Reactive deposition processes are of interest, because desired stoichiometric phases are created in a

  6. Formation of amorphous metal alloys by chemical vapor deposition

    DOE Patents [OSTI]

    Mullendore, A.W.

    1988-03-18

    Amorphous alloys are deposited by a process of thermal dissociation of mixtures of organometallic compounds and metalloid hydrides,e.g., transition metal carbonyl, such as nickel carbonyl and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit. 1 fig.

  7. Formation of amorphous metal alloys by chemical vapor deposition

    DOE Patents [OSTI]

    Mullendore, Arthur W.

    1990-01-01

    Amorphous alloys are deposited by a process of thermal dissociation of mixtures or organometallic compounds and metalloid hydrides, e.g., transition metal carbonyl such as nickel carbonyl, and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit.

  8. NREL: Process Development and Integration Laboratory - Materials Deposition

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Device Fabrication in the Atmospheric Processing Platform Materials Deposition and Device Fabrication in the Atmospheric Processing Platform This page provides details on materials deposition and device fabrication in the Atmospheric Processing platform. The four techniques highlighted are robotic inkjet printing, large-area ultrasonic spray deposition, sputtering, and thermal evaporator deposition. Photo of the shiny back of the glove box behind a close-up of an unenclosed inkjet

  9. Advanced Evaporative Deposition System with Embedded Heater Element and

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shutter - Energy Innovation Portal Advanced Evaporative Deposition System with Embedded Heater Element and Shutter Colorado State University Contact CSU About This Technology Technology Marketing Summary A device for evaporative deposition of thin films that offers more efficient heating and greater deposition control. Key features include an embedded heater element and a shutter system. Description Typical evaporative deposition systems can be used for close space sublimation (CSS) or

  10. Low-Temperature Engineering Algorithm of Deposition Risk

    Energy Science and Technology Software Center (OSTI)

    1992-12-08

    LEADER is designed to qualitatively predict the potential coal ash deposition in an utility boiler in convective pass heat exchange surfaces below 1850 F. This program concentrates on those deposits which develop their strength through sulfation and not silicate sintering. Massive deposits that form on the upstream sides of boiler tubes at higher temperatures are not considered in this model.

  11. Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition

    SciTech Connect (OSTI)

    Park, Taeyong; Lee, Jaesang; Park, Jingyu; Jeon, Heeyoung; Jeon, Hyeongtag; Lee, Ki-Hoon; Cho, Byung-Chul; Kim, Moo-Sung; Ahn, Heui-Bok

    2012-01-15

    Ruthenium thin films were deposited on argon plasma-treated SiO{sub 2} and untreated SiO{sub 2} substrates by remote plasma atomic layer deposition using bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp){sub 2}] as a Ru precursor and ammonia plasma as a reactant. The results of in situ Auger electron spectroscopy (AES) analysis indicate that the initial transient region of Ru deposition was decreased by Ar plasma treatment at 400 deg. C, but did not change significantly at 300 deg. C The deposition rate exhibited linearity after continuous film formation and the deposition rates were about 1.7 A/cycle and 0.4 A/cycle at 400 deg. C and 300 deg. C, respectively. Changes of surface energy and polar and dispersive components were measured by the sessile drop test. The quantity of surface amine groups was measured from the surface nitrogen concentration with AES. Furthermore, the Ar plasma-treated SiO{sub 2} contained more amine groups and less hydroxyl groups on the surface than on untreated SiO{sub 2}. Auger spectra exhibited chemical shifts by Ru-O bonding, and larger shifts were observed on untreated substrates due to the strong adhesion of Ru films.

  12. Cr-doped scandium borate laser

    DOE Patents [OSTI]

    Chai, Bruce H.; Lai, Shui T.; Long, Margaret N.

    1989-01-01

    A broadly wavelength-tunable laser is provided which comprises as the laser medium a single crystal of MBO.sub.3 :Cr.sup.3+, where M is selected from the group of Sc, In and Lu. The laser may be operated over a broad temperature range from cryogenic temperatures to elevated temperatures. Emission is in a spectral range from red to infrared, and the laser is useful in the fields of defense, communications, isotope separation, photochemistry, etc.

  13. High-rate reactive sputter deposition of zirconium dioxide (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Journal Article: High-rate reactive sputter deposition of zirconium dioxide Citation Details In-Document Search Title: High-rate reactive sputter deposition of zirconium dioxide Using an improved reactive sputter deposition technique, zirconium dioxide is deposited on cooled and uncooled substrates at low, medium, and high rates of 51.7, 95.4, and 152.4 nm/min, respectively. The films are deposited by sputtering a Zr target in an oxygen--argon plasma. The Zr target

  14. Vapor-deposited porous films for energy conversion

    DOE Patents [OSTI]

    Jankowski, Alan F.; Hayes, Jeffrey P.; Morse, Jeffrey D.

    2005-07-05

    Metallic films are grown with a "spongelike" morphology in the as-deposited condition using planar magnetron sputtering. The morphology of the deposit is characterized by metallic continuity in three dimensions with continuous and open porosity on the submicron scale. The stabilization of the spongelike morphology is found over a limited range of the sputter deposition parameters, that is, of working gas pressure and substrate temperature. This spongelike morphology is an extension of the features as generally represented in the classic zone models of growth for physical vapor deposits. Nickel coatings were deposited with working gas pressures up 4 Pa and for substrate temperatures up to 1000 K. The morphology of the deposits is examined in plan and in cross section views with scanning electron microscopy (SEM). The parametric range of gas pressure and substrate temperature (relative to absolute melt point) under which the spongelike metal deposits are produced appear universal for other metals including gold, silver, and aluminum.

  15. Electronic structure, magnetism, and antisite disorder in CoFeCrGe and CoMnCrAl quaternary Heusler alloys

    SciTech Connect (OSTI)

    Enamullah, .; Venkateswara, Y.; Gupta, Sachin; Varma, Manoj Raama; Singh, Prashant; Suresh, K. G.; Alam, Aftab

    2015-12-10

    In this study, we present a combined theoretical and experimental study of two quaternary Heusler alloys CoFeCrGe (CFCG) and CoMnCrAl (CMCA), promising candidates for spintronics applications. Magnetization measurement shows the saturation magnetization and transition temperature to be 3 μB, 866 K and 0.9 μB, 358 K for CFCG and CMCA respectively. The magnetization values agree fairly well with our theoretical results and also obey the Slater-Pauling rule, a prerequisite for half metallicity. A striking difference between the two systems is their structure; CFCG crystallizes in fully ordered Y-type structure while CMCA has L21 disordered structure. The antisite disorder adds a somewhat unique property to the second compound, which arises due to the probabilistic mutual exchange of Al positions with Cr/Mn and such an effect is possibly expected due to comparable electronegativities of Al and Cr/Mn. Ab initio simulation predicted a unique transition from half metallic ferromagnet to metallic antiferromagnet beyond a critical excess concentration of Al in the alloy.

  16. Electronic structure, magnetism, and antisite disorder in CoFeCrGe and CoMnCrAl quaternary Heusler alloys

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Enamullah, .; Venkateswara, Y.; Gupta, Sachin; Varma, Manoj Raama; Singh, Prashant; Suresh, K. G.; Alam, Aftab

    2015-12-10

    In this study, we present a combined theoretical and experimental study of two quaternary Heusler alloys CoFeCrGe (CFCG) and CoMnCrAl (CMCA), promising candidates for spintronics applications. Magnetization measurement shows the saturation magnetization and transition temperature to be 3 μB, 866 K and 0.9 μB, 358 K for CFCG and CMCA respectively. The magnetization values agree fairly well with our theoretical results and also obey the Slater-Pauling rule, a prerequisite for half metallicity. A striking difference between the two systems is their structure; CFCG crystallizes in fully ordered Y-type structure while CMCA has L21 disordered structure. The antisite disorder adds amore » somewhat unique property to the second compound, which arises due to the probabilistic mutual exchange of Al positions with Cr/Mn and such an effect is possibly expected due to comparable electronegativities of Al and Cr/Mn. Ab initio simulation predicted a unique transition from half metallic ferromagnet to metallic antiferromagnet beyond a critical excess concentration of Al in the alloy.« less

  17. Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

    SciTech Connect (OSTI)

    Huang, Jie; Lucero, Antonio T.; Cheng, Lanxia; Kim, Jiyoung; Hwang, Hyeon Jun; Ha, Min-Woo

    2015-03-23

    In this study, we have deposited organic-inorganic hybrid semiconducting hydroquinone (HQ)/zinc oxide (ZnO) superlattices using molecular-atomic layer deposition, which enables accurate control of film thickness, excellent uniformity, and sharp interfaces at a low deposition temperature (150 °C). Self-limiting growth of organic layers is observed for the HQ precursor on ZnO surface. Nano-laminates were prepared by varying the number of HQ to ZnO cycles in order to investigate the physical and electrical effects of different HQ to ZnO ratios. It is indicated that the addition of HQ layer results in enhanced mobility and reduced carrier concentration. The highest Hall mobility of approximately 2.3 cm{sup 2}/V·s and the lowest n-type carrier concentration of approximately 1.0 × 10{sup 18}/cm{sup 3} were achieved with the organic-inorganic superlattice deposited with a ratio of 10 ZnO cycles to 1 HQ cycle. This study offers an approach to tune the electrical transport characteristics of ALD ZnO matrix thin films using an organic dopant. Moreover, with organic embedment, this nano-laminate material may be useful for flexible electronics.

  18. Synthesis and mechanical properties of CrMoC{sub x}N{sub 1-x} coatings deposited by a hybrid coating system

    SciTech Connect (OSTI)

    Yun, Ji Hwan; Heo, Su Jeong; Kim, Kwang Ryul; Kim, Kwang Ho

    2008-01-15

    Quaternary CrMoC{sub x}N{sub 1-x} coatings were deposited on steel substrates (AISI D2) and Si wafers by a hybrid coating system combining an arc-ion plating technique and a dc reactive magnetron sputtering technique using Cr and Mo targets in an Ar/N{sub 2}/CH{sub 4} gaseous mixture. The carbon content of CrMoC{sub x}N{sub 1-x} coatings was linearly increased with increasing CH{sub 4}/(CH{sub 4}+N{sub 2}) gas flow rate ratio. The maximum hardness of 44 GPa was obtained from the CrMoC{sub x}N{sub 1-x} coatings containing a carbon content of x=0.33 with a residual stress of -4.4 GPa. The average friction coefficient of Cr-Mo-N coatings was 0.42, and it is decreased to 0.31 after applying CrMoC{sub x}N{sub 1-x} coatings. This result was caused by the formation of a carbon-rich transfer layer that acted as a solid lubricant to reduce contact between the coating surface and steel ball. The microstructure of the coatings was investigated by x-ray diffraction, scanning electron microscopy, and x-ray photoelectron spectroscopy. In this work, the microstructure and mechanical properties of the CrMoC{sub x}N{sub 1-x} coatings were systematically investigated with the instrumental analyses.

  19. Electro-deposition of superconductor oxide films

    DOE Patents [OSTI]

    Bhattacharya, Raghu N.

    2001-01-01

    Methods for preparing high quality superconducting oxide precursors which are well suited for further oxidation and annealing to form superconducting oxide films. The method comprises forming a multilayered superconducting precursor on a substrate by providing an electrodeposition bath comprising an electrolyte medium and a substrate electrode, and providing to the bath a plurality of precursor metal salts which are capable of exhibiting superconducting properties upon subsequent treatment. The superconducting precursor is then formed by electrodepositing a first electrodeposited (ED) layer onto the substrate electrode, followed by depositing a layer of silver onto the first electrodeposited (ED) layer, and then electrodepositing a second electrodeposited (ED) layer onto the Ag layer. The multilayered superconducting precursor is suitable for oxidation at a sufficient annealing temperature in air or an oxygen-containing atmosphere to form a crystalline superconducting oxide film.

  20. Method and apparatus for electrospark deposition

    DOE Patents [OSTI]

    Bailey, Jeffrey A.; Johnson, Roger N.; Park, Walter R.; Munley, John T.

    2004-12-28

    A method and apparatus for controlling electrospark deposition (ESD) comprises using electrical variable waveforms from the ESD process as a feedback parameter. The method comprises measuring a plurality of peak amplitudes from a series of electrical energy pulses delivered to an electrode tip. The maximum peak value from among the plurality of peak amplitudes correlates to the contact force between the electrode tip and a workpiece. The method further comprises comparing the maximum peak value to a set point to determine an offset and optimizing the contact force according to the value of the offset. The apparatus comprises an electrode tip connected to an electrical energy wave generator and an electrical signal sensor, which connects to a high-speed data acquisition card. An actuator provides relative motion between the electrode tip and a workpiece by receiving a feedback drive signal from a processor that is operably connected to the actuator and the high-speed data acquisition card.

  1. Vacuum deposition and curing of liquid monomers

    DOE Patents [OSTI]

    Affinito, J.D.

    1995-03-07

    The present invention is the formation of solid polymer layers under vacuum. More specifically, the present invention is the use of ``standard`` polymer layer-making equipment that is generally used in an atmospheric environment in a vacuum, and degassing the monomer material prior to injection into the vacuum. Additional layers of polymer or metal or oxide may be vacuum deposited onto solid polymer layers. Formation of polymer layers under a vacuum improves material and surface characteristics, and subsequent quality of bonding to additional layers. Further advantages include use of less to no photoinitiator for curing, faster curing, fewer impurities in the polymer electrolyte, as well as improvement in material properties including no trapped gas resulting in greater density, and reduced monomer wetting angle that facilitates spreading of the monomer and provides a smoother finished surface.

  2. Vacuum deposition and curing of liquid monomers

    DOE Patents [OSTI]

    Affinito, John D. (Richland, WA)

    1993-01-01

    The present invention is the formation of solid polymer layers under vacuum. More specifically, the present invention is the use of "standard" polymer layer-making equipment that is generally used in an atmospheric environment in a vacuum, and degassing the monomer material prior to injection into the vacuum. Additional layers of polymer or metal may be vacuum deposited onto solid polymer layers. Formation of polymer layers under a vacuum improves material and surface characteristics, and subsequent quality of bonding to additional layers. Further advantages include use of less to no photoinitiator for curing, faster curing, fewer impurities in the polymer electrolyte, as well as improvement in material properties including no trapped gas resulting in greater density, and reduced monomer wetting angle that facilitates spreading of the monomer and provides a smoother finished surface.

  3. Vacuum deposition and curing of liquid monomers

    DOE Patents [OSTI]

    Affinito, John D. (Kennewick, WA)

    1995-01-01

    The present invention is the formation of solid polymer layers under vacuum. More specifically, the present invention is the use of "standard" polymer layer-making equipment that is generally used in an atmospheric environment in a vacuum, and degassing the monomer material prior to injection into the vacuum. Additional layers of polymer or metal or oxide may be vacuum deposited onto solid polymer layers. Formation of polymer layers under a vacuum improves material and surface characteristics, and subsequent quality of bonding to additional layers. Further advantages include use of less to no photoinitiator for curing, faster curing, fewer impurities in the polymer electrolyte, as well as improvement in material properties including no trapped gas resulting in greater density, and reduced monomer wetting angle that facilitates spreading of the monomer and provides a smoother finished surface.

  4. Vacuum deposition and curing of liquid monomers

    DOE Patents [OSTI]

    Affinito, J.D.

    1993-11-09

    The present invention is the formation of solid polymer layers under vacuum. More specifically, the present invention is the use of standard polymer layer-making equipment that is generally used in an atmospheric environment in a vacuum, and degassing the monomer material prior to injection into the vacuum. Additional layers of polymer or metal may be vacuum deposited onto solid polymer layers. Formation of polymer layers under a vacuum improves material and surface characteristics, and subsequent quality of bonding to additional layers. Further advantages include use of less to no photoinitiator for curing, faster curing, fewer impurities in the polymer electrolyte, as well as improvement in material properties including no trapped gas resulting in greater density, and reduced monomer wetting angle that facilitates spreading of the monomer and provides a smoother finished surface.

  5. Nanostructure templating using low temperature atomic layer deposition

    DOE Patents [OSTI]

    Grubbs, Robert K.; Bogart, Gregory R.; Rogers, John A.

    2011-12-20

    Methods are described for making nanostructures that are mechanically, chemically and thermally stable at desired elevated temperatures, from nanostructure templates having a stability temperature that is less than the desired elevated temperature. The methods comprise depositing by atomic layer deposition (ALD) structural layers that are stable at the desired elevated temperatures, onto a template employing a graded temperature deposition scheme. At least one structural layer is deposited at an initial temperature that is less than or equal to the stability temperature of the template, and subsequent depositions made at incrementally increased deposition temperatures until the desired elevated temperature stability is achieved. Nanostructure templates include three dimensional (3D) polymeric templates having features on the order of 100 nm fabricated by proximity field nanopatterning (PnP) methods.

  6. Deposition method for producing silicon carbide high-temperature semiconductors

    DOE Patents [OSTI]

    Hsu, George C.; Rohatgi, Naresh K.

    1987-01-01

    An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

  7. Inhomogeneity smoothing using density valley formed by ion beam deposition

    Office of Scientific and Technical Information (OSTI)

    in ICF fuel pellet (Journal Article) | SciTech Connect Inhomogeneity smoothing using density valley formed by ion beam deposition in ICF fuel pellet Citation Details In-Document Search Title: Inhomogeneity smoothing using density valley formed by ion beam deposition in ICF fuel pellet We study the beam non-uniformity smoothing effect of the radiation transport in the density valley formed by an ion-beam deposition in an ion-beam inertial confinement fusion pellets by numerical simulation.

  8. Atmospheric Pressure Deposition for Electrochromic Windows | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Atmospheric Pressure Deposition for Electrochromic Windows Atmospheric Pressure Deposition for Electrochromic Windows Emerging Technologies Project for the 2013 Building Technologies Office's Program Peer Review PDF icon emrgtech22_tenent_040413.pdf More Documents & Publications NREL senior scientist, Robert Tenent, Ph.D., with equipment for low cost processing (deposition) of window coatings materials. Dynamic Windows Low-Cost Solutions for Dynamic Window Material CX-003799:

  9. EGR Cooler Fouling - Visualization of Deposition and Removal...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    EGR Cooler Fouling - Visualization of Deposition and Removal Mechanis Presents experimental data on exhaust gas recirculation(EGR) cooler fouling using new test apparatus that...

  10. Liquid-Phase Deposition of Silicon Nanocrystal Films - Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Liquid-Phase Deposition of Silicon Nanocrystal Films University of Minnesota DOE Grant Recipients Contact GRANT About This Technology Technology Marketing Summary Silicon ...

  11. OLEDWORKS DEVELOPS INNOVATIVE HIGH-PERFORMANCE DEPOSITION TECHNOLOGY...

    Energy Savers [EERE]

    high-performance deposition technology that addresses two major aspects of this manufacturing cost: the expense of organic materials per area of useable product, and the...

  12. Quick, Efficient Film Deposition for Nanomaterials - Energy Innovation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Quick, Efficient Film Deposition for Nanomaterials Oak Ridge National Laboratory Contact ORNL About This Technology Publications: PDF Document Publication Quick, Efficient Film ...

  13. System and Method for Sealing a Vapor Deposition Source - Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    costs and minimizes system downtime for cleaning Applications and Industries Thin film solar Deposition of any thin film Patents and Patent Applications ID Number Title and...

  14. Method of depositing a high-emissivity layer

    DOE Patents [OSTI]

    Wickersham, Charles E.; Foster, Ellis L.

    1983-01-01

    A method of depositing a high-emissivity layer on a substrate comprising RF sputter deposition of a carbide-containing target in an atmosphere of a hydrocarbon gas and a noble gas. As the carbide is deposited on the substrate the hydrocarbon gas decomposes to hydrogen and carbon. The carbon deposits on the target and substrate causing a carbide/carbon composition gradient to form on the substrate. At a sufficiently high partial pressure of hydrocarbon gas, a film of high-emissivity pure carbon will eventually form over the substrate.

  15. Deposition of Graded Thermal Barrier Coatings for Gas Turbine...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Find More Like This Return to Search Deposition of Graded Thermal Barrier Coatings for Gas Turbine Blades Sandia National Laboratories Contact SNL About This Technology ...

  16. Rhyolites and Associated Deposits of the Valles-Toledo Caldera...

    Open Energy Info (EERE)

    Complex Jump to: navigation, search OpenEI Reference LibraryAdd to library Journal Article: Rhyolites and Associated Deposits of the Valles-Toledo Caldera Complex Abstract...

  17. Electroless Atomic Layer Deposition: A Scalable Approach to Surface...

    Office of Scientific and Technical Information (OSTI)

    Title: Electroless Atomic Layer Deposition: A Scalable Approach to Surface Modified Metal Powders. Abstract not provided. Authors: Cappillino, Patrick ; Robinson, David ; El Gabaly ...

  18. Plasma sprayed and electrospark deposited zirconium metal diffusion barrier coatings

    SciTech Connect (OSTI)

    Hollis, Kendall J; Pena, Maria I

    2010-01-01

    Zirconium metal coatings applied by plasma spraying and electrospark deposition (ESD) have been investigated for use as diffusion barrier coatings on low enrichment uranium fuel for research nuclear reactors. The coatings have been applied to both stainless steel as a surrogate and to simulated nuclear fuel uranium-molybdenum alloy substrates. Deposition parameter development accompanied by coating characterization has been performed. The structure of the plasma sprayed coating was shown to vary with transferred arc current during deposition. The structure of ESD coatings was shown to vary with the capacitance of the deposition equipment.

  19. Deposition of dopant impurities and pulsed energy drive-in

    DOE Patents [OSTI]

    Wickboldt, Paul; Carey, Paul G.; Smith, Patrick M.; Ellingboe, Albert R.

    2008-01-01

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

  20. A radon progeny deposition model (Journal Article) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    by the long half life (22 y) of sup 210Pb on sensitive locations of a detector. ... RADIATION; CLEAN ROOMS; DEPOSITION; HALF-LIFE; PROGENY; RADIATION DETECTORS; RADON; ...

  1. Spatial correlation of energy deposition events in irradiated...

    Office of Scientific and Technical Information (OSTI)

    events in irradiated liquid water Citation Details In-Document Search Title: Spatial correlation of energy deposition events in irradiated liquid water You are accessing a ...

  2. Spatial correlation of energy deposition events in irradiated...

    Office of Scientific and Technical Information (OSTI)

    events in irradiated liquid water Citation Details In-Document Search Title: Spatial correlation of energy deposition events in irradiated liquid water Monte Carlo electron ...

  3. Deposition of dopant impurities and pulsed energy drive-in

    DOE Patents [OSTI]

    Wickboldt, P.; Carey, P.G.; Smith, P.M.; Ellingboe, A.R.

    1999-06-29

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique is disclosed. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques. 2 figs.

  4. Deposition of dopant impurities and pulsed energy drive-in

    DOE Patents [OSTI]

    Wickboldt, Paul; Carey, Paul G.; Smith, Patrick M.; Ellingboe, Albert R.

    1999-01-01

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

  5. Atomic Layer Deposition and in Situ Characterization of Ultraclean...

    Office of Scientific and Technical Information (OSTI)

    Hydroxide Citation Details In-Document Search Title: Atomic Layer Deposition and in Situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide Authors: Kozen,...

  6. Evaluation of Wax Deposition and Its Control During Production...

    Office of Scientific and Technical Information (OSTI)

    Title: Evaluation of Wax Deposition and Its Control During Production of Alaska North Slope Oils Due to increasing oil demand, oil companies are moving into arctic environments and ...

  7. Analysis Of Hot Springs And Associated Deposits In Yellowstone...

    Open Energy Info (EERE)

    Spaceborne Thermal Emission and Reflection Radiometer (ASTER) and the Airborne VisibleIR Image Spectrometer (AVIRIS) data were used to characterize hot spring deposits in the...

  8. USE OF ATOMIC LAYER DEPOSITION OF FUNCTIONALIZATION OF NANOPOROUS BIOMATERIALS

    SciTech Connect (OSTI)

    Brigmon, R.; Narayan, R.; Adiga, S.; Pellin, M.; Curtiss, L.; Stafslien, S.; Chisholm, B.; Monteiro-Riviere, N.; Elam, J.

    2010-02-08

    Due to its chemical stability, uniform pore size, and high pore density, nanoporous alumina is being investigated for use in biosensing, drug delivery, hemodialysis, and other medical applications. In recent work, we have examined the use of atomic layer deposition for coating the surfaces of nanoporous alumina membranes. Zinc oxide coatings were deposited on nanoporous alumina membranes using atomic layer deposition. The zinc oxide-coated nanoporous alumina membranes demonstrated antimicrobial activity against Escherichia coli and Staphylococcus aureus bacteria. These results suggest that atomic layer deposition is an attractive technique for modifying the surfaces of nanoporous alumina membranes and other nanostructured biomaterials.

  9. Liquid Metal Heat Exchanger for Geologic Deposits - Energy Innovation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Liquid Metal Heat Exchanger for Geologic Deposits Oak Ridge National Laboratory Contact ... The apparatus provides more efficient heat transfer than existing technologies for ...

  10. Hydrogen Absorption Induced Metal Deposition on Palladium and...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hydrogen Absorption Induced Metal Deposition on Palladium and Palladium-Alloy Particles Brookhaven National Laboratory Contact BNL About This Technology

    High resolution...

  11. A radon progeny deposition model (Journal Article) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    However, existing models have not explored the impact of some environmental factors important for low background experiments. A test stand has been constructed to deposit radon ...

  12. Active Geothermal Systems And Associated Gold Deposits In The...

    Open Energy Info (EERE)

    Geothermal Systems And Associated Gold Deposits In The Great Basin Jump to: navigation, search OpenEI Reference LibraryAdd to library Conference Paper: Active Geothermal Systems...

  13. Fabrication of Conductive Paths on a Fused Deposition Modeling Substrate using Inkjet Deposition

    SciTech Connect (OSTI)

    Zhou, Wenchao; List, III, Frederick Alyious; Duty, Chad E.; Babu, Sudarsanam Suresh

    2015-01-15

    Inkjet deposition is one of the most attractive fabrication techniques for producing cost efficient and lightweight electronic devices on various substrates with low environmental impact. Fused Deposition Modeling (FDM) is one of the most used and reliable additive manufacturing processes by extrusion of wire-shaped thermoplastic materials, which provides an opportunity for embedding printed electronics into mechanical structures during the building process and enables the design of compact smart structures that can sense and adapt to their own state and the environment. This paper represents one of the first explorations of integrating inkjet deposition of silver nanoparticle inks with the FDM process for making compact electro-mechanical structures. Three challenges have been identified and investigated, including the discontinuity of the printed lines resulting from the irregular surface of the FDM substrate, the non-conductivity of the printed lines due to the particle segregation during the droplet drying process, and the slow drying process caused by the skinning effect . Two different techniques are developed in this paper to address the issue of continuity of the printed lines, including surface ironing and a novel thermal plow technique that plows a channel in the FDM substrate to seal off the pores in the substrate and contain the deposited inks. Two solutions are also found for obtaining conductivity from the continuous printed lines, including porous surface coating and using a more viscous ink with larger nanoparticle size. Then the effects of the printing and post-processing parameters on the conductivity are examined. It is found that post-processing is a dominant factor in determining the conductivity of the printed lines.

  14. Fabrication of Conductive Paths on a Fused Deposition Modeling Substrate using Inkjet Deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhou, Wenchao; List, III, Frederick Alyious; Duty, Chad E.; Babu, Sudarsanam Suresh

    2015-01-15

    Inkjet deposition is one of the most attractive fabrication techniques for producing cost efficient and lightweight electronic devices on various substrates with low environmental impact. Fused Deposition Modeling (FDM) is one of the most used and reliable additive manufacturing processes by extrusion of wire-shaped thermoplastic materials, which provides an opportunity for embedding printed electronics into mechanical structures during the building process and enables the design of compact smart structures that can sense and adapt to their own state and the environment. This paper represents one of the first explorations of integrating inkjet deposition of silver nanoparticle inks with the FDMmore » process for making compact electro-mechanical structures. Three challenges have been identified and investigated, including the discontinuity of the printed lines resulting from the irregular surface of the FDM substrate, the non-conductivity of the printed lines due to the particle segregation during the droplet drying process, and the slow drying process caused by the skinning effect . Two different techniques are developed in this paper to address the issue of continuity of the printed lines, including surface ironing and a novel thermal plow technique that plows a channel in the FDM substrate to seal off the pores in the substrate and contain the deposited inks. Two solutions are also found for obtaining conductivity from the continuous printed lines, including porous surface coating and using a more viscous ink with larger nanoparticle size. Then the effects of the printing and post-processing parameters on the conductivity are examined. It is found that post-processing is a dominant factor in determining the conductivity of the printed lines.« less

  15. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

    DOE Patents [OSTI]

    Lowden, Richard A.

    1994-01-01

    A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.

  16. Sputter deposition for multi-component thin films

    DOE Patents [OSTI]

    Krauss, A.R.; Auciello, O.

    1990-05-08

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

  17. Sputter deposition for multi-component thin films

    DOE Patents [OSTI]

    Krauss, Alan R.; Auciello, Orlando

    1990-01-01

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

  18. Electroplating method for producing ultralow-mass fissionable deposits

    DOE Patents [OSTI]

    Ruddy, Francis H.

    1989-01-01

    A method for producing ultralow-mass fissionable deposits for nuclear reactor dosimetry is described, including the steps of holding a radioactive parent until the radioactive parent reaches secular equilibrium with a daughter isotope, chemically separating the daughter from the parent, electroplating the daughter on a suitable substrate, and holding the electroplated daughter until the daughter decays to the fissionable deposit.

  19. Methods for making deposited films with improved microstructures

    DOE Patents [OSTI]

    Patten, James W.; Moss, Ronald W.; McClanahan, Edwin D.

    1982-01-01

    Methods for improving microstructures of line-of-sight deposited films are described. Columnar growth defects ordinarily produced by geometrical shadowing during deposition of such films are eliminated without resorting to post-deposition thermal or mechanical treatments. The native, as-deposited coating qualities, including homogeneity, fine grain size, and high coating-to-substrate adherence, can thus be retained. The preferred method includes the steps of emitting material from a source toward a substrate to deposit a coating non-uniformly on the substrate surface, removing a portion of the coating uniformly over the surface, again depositing material onto the surface, but from a different direction, and repeating the foregoing steps. The quality of line-of-sight deposited films such as those produced by sputtering, progressively deteriorates as the angle of incidence between the flux and the surface becomes increasingly acute. Depositing non-uniformly, so that the coating becomes progressively thinner as quality deteriorates, followed by uniformly removing some of the coating, such as by resputtering, eliminates the poor quality portions, leaving only high quality portions of the coating. Subsequently sputtering from a different direction applies a high quality coating to other regions of the surface. Such steps can be performed either simultaneously or sequentially to apply coatings of a uniformly high quality, closed microstructure to three-dimensional or larger planar surfaces.

  20. Method of depositing epitaxial layers on a substrate

    DOE Patents [OSTI]

    Goyal, Amit

    2003-12-30

    An epitaxial article and method for forming the same includes a substrate having a textured surface, and an electrochemically deposited substantially single orientation epitaxial layer disposed on and in contact with the textured surface. The epitaxial article can include an electromagnetically active layer and an epitaxial buffer layer. The electromagnetically active layer and epitaxial buffer layer can also be deposited electrochemically.

  1. Method of and apparatus for determining deposition-point temperature

    DOE Patents [OSTI]

    Mansure, Arthur J.; Spates, James J.; Martin, Stephen J.

    1998-01-01

    Acoustic-wave sensor apparatus and method for analyzing a normally liquid petroleum-based composition for monitoring deposition-point temperature. The apparatus includes at least one acoustic-wave device such as SAW, QCM, FPM, TSM or APM type devices in contact with the petroleum-based composition for sensing or detecting the surface temperature at which deposition occurs and/or rate of deposition as a function of temperature by sensing an accompanying change in frequency, phase shift, damping voltage or damping current of an electrical oscillator to a known calibrated condition. The acoustic wave device is actively cooled to monitor the deposition of constituents such as paraffins by determining the point at which solids from the liquid composition begin to form on the acoustic wave device. The acoustic wave device can be heated to melt or boil off the deposits to reset the monitor and the process can be repeated.

  2. How to make deposition of images a reality

    SciTech Connect (OSTI)

    Guss, J. Mitchell; McMahon, Brian

    2014-10-01

    An analysis is performed of the technical and financial challenges to be overcome if deposition of primary experimental data is to become routine. The IUCr Diffraction Data Deposition Working Group is investigating the rationale and policies for routine deposition of diffraction images (and other primary experimental data sets). An information-management framework is described that should inform policy directions, and some of the technical and other issues that need to be addressed in an effort to achieve such a goal are analysed. In the near future, routine data deposition could be encouraged at one of the growing number of institutional repositories that accept data sets or at a generic data-publishing web repository service. To realise all of the potential benefits of depositing diffraction data, specialized archives would be preferable. Funding such an initiative will be challenging.

  3. Method of and apparatus for determining deposition-point temperature

    DOE Patents [OSTI]

    Mansure, A.J.; Spates, J.J.; Martin, S.J.

    1998-10-27

    Acoustic-wave sensor apparatus and method are disclosed for analyzing a normally liquid petroleum-based composition for monitoring deposition-point temperature. The apparatus includes at least one acoustic-wave device such as SAW, QCM, FPM, TSM or APM type devices in contact with the petroleum-based composition for sensing or detecting the surface temperature at which deposition occurs and/or rate of deposition as a function of temperature by sensing an accompanying change in frequency, phase shift, damping voltage or damping current of an electrical oscillator to a known calibrated condition. The acoustic wave device is actively cooled to monitor the deposition of constituents such as paraffins by determining the point at which solids from the liquid composition begin to form on the acoustic wave device. The acoustic wave device can be heated to melt or boil off the deposits to reset the monitor and the process can be repeated. 5 figs.

  4. COAL-FIRED UTILITY BOILERS: SOLVING ASH DEPOSITION PROBLEMS

    SciTech Connect (OSTI)

    Christopher J. Zygarlicke; Donald P. McCollor; Steven A. Benson; Jay R. Gunderson

    2001-04-01

    The accumulation of slagging and fouling ash deposits in utility boilers has been a source of aggravation for coal-fired boiler operators for over a century. Many new developments in analytical, modeling, and combustion testing methods in the past 20 years have made it possible to identify root causes of ash deposition. A concise and comprehensive guidelines document has been assembled for solving ash deposition as related to coal-fired utility boilers. While this report accurately captures the current state of knowledge in ash deposition, note that substantial research and development is under way to more completely understand and mitigate slagging and fouling. Thus, while comprehensive, this document carries the title ''interim,'' with the idea that future work will provide additional insight. Primary target audiences include utility operators and engineers who face plant inefficiencies and significant operational and maintenance costs that are associated with ash deposition problems. Pulverized and cyclone-fired coal boilers are addressed specifically, although many of the diagnostics and solutions apply to other boiler types. Logic diagrams, ash deposit types, and boiler symptoms of ash deposition are used to aid the user in identifying an ash deposition problem, diagnosing and verifying root causes, determining remedial measures to alleviate or eliminate the problem, and then monitoring the situation to verify that the problem has been solved. In addition to a step-by-step method for identifying and remediating ash deposition problems, this guideline document (Appendix A) provides descriptions of analytical techniques for diagnostic testing and gives extensive fundamental and practical literature references and addresses of organizations that can provide help in alleviating ash deposition problems.

  5. Risk assessment based on point source deposition

    SciTech Connect (OSTI)

    Chadwick, G.F.

    1997-12-31

    The International Joint Commission (IJC) in a recently published report states that various clean-up techniques have resulted in significantly cleaner lakes than 20 years ago. Both the US EPA and Environment Canada have passed laws that require emissions controls on significant sources of contaminants. Improved emission controls have played a large part in the reduced pollution levels to the Great Lakes. Improved controls have significantly reduced the pollutants deposited to both land and water. This paper will discuss a Risk Analysis for the emissions from a Hospital in Rochester, New York. Current New York Department of Environmental Conservation (DEC) regulations require emission controls on such incinerators. This hospital has added both a scrubber and a bag house to control emissions. Twenty years ago, such incinerators, like many other emission sources would not have had control devices. New York`s Department of Environmental Conservation requires, as part of the Permitting process, that an Impact Analysis and if required, a multipathway Health Risk Assessment (HRA) be performed for all Medical Waste Incinerators before a Permit can be issued. This insures that the emissions will not create a health hazard to humans. Such an analysis was performed for a new 1,000 lb/hr Medical Waste Incinerator (MWI) installed in the North-East part of Rochester, New York. An Air Quality Impact Assessment (AQIA) based on an actual stack test indicated that this facility`s dioxin emissions would exceed the NY DEC Guideline levels. The Carcinogenic Risk (of death) for our most exposed individual (MEI) was calculated to be 8.75 E{sup {minus}06} (<1:100,000). The Hazard Index calculated for this MEI was 0.43. Hazard Index`s less then 1 are considered a reasonable risk. Health risk assessments are by design, very conservative. EPA sources have concluded that calculated death risks between one (1) and one hundred (100) per million are not excessive.

  6. Fluorine contamination in yttrium-doped barium zirconate film deposited by atomic layer deposition

    SciTech Connect (OSTI)

    An Jihwan; Beom Kim, Young; Sun Park, Joong; Hyung Shim, Joon; Guer, Turgut M.; Prinz, Fritz B.

    2012-01-15

    The authors have investigated the change of chemical composition, crystallinity, and ionic conductivity in fluorine contaminated yttrium-doped barium zirconate (BYZ) fabricated by atomic layer deposition (ALD). It has been identified that fluorine contamination can significantly affect the conductivity of the ALD BYZ. The authors have also successfully established the relationship between process temperature and contamination and the source of fluorine contamination, which was the perfluoroelastomer O-ring used for vacuum sealing. The total removal of fluorine contamination was achieved by using all-metal sealed chamber instead of O-ring seals.

  7. Atomic and molecular layer deposition for surface modification

    SciTech Connect (OSTI)

    Vh-Nissi, Mika; Sievnen, Jenni; Salo, Erkki; Heikkil, Pirjo; Kentt, Eija; Johansson, Leena-Sisko; Koskinen, Jorma T.; Harlin, Ali

    2014-06-01

    Atomic and molecular layer deposition (ALD and MLD, respectively) techniques are based on repeated cycles of gassolid surface reactions. A partial monolayer of atoms or molecules is deposited to the surface during a single deposition cycle, enabling tailored film composition in principle down to molecular resolution on ideal surfaces. Typically ALD/MLD has been used for applications where uniform and pinhole free thin film is a necessity even on 3D surfaces. However, thin even non-uniform atomic and molecular deposited layers can also be used to tailor the surface characteristics of different non-ideal substrates. For example, print quality of inkjet printing on polymer films and penetration of water into porous nonwovens can be adjusted with low-temperature deposited metal oxide. In addition, adhesion of extrusion coated biopolymer to inorganic oxides can be improved with a hybrid layer based on lactic acid. - Graphical abstract: Print quality of a polylactide film surface modified with atomic layer deposition prior to inkjet printing (360 dpi) with an aqueous ink. Number of printed dots illustrated as a function of 0, 5, 15 and 25 deposition cycles of trimethylaluminum and water. - Highlights: ALD/MLD can be used to adjust surface characteristics of films and fiber materials. Hydrophobicity after few deposition cycles of Al{sub 2}O{sub 3} due to e.g. complex formation. Same effect on cellulosic fabrics observed with low temperature deposited TiO{sub 2}. Different film growth and oxidation potential with different precursors. Hybrid layer on inorganic layer can be used to improve adhesion of polymer melt.

  8. Method for depositing high-quality microcrystalline semiconductor materials

    DOE Patents [OSTI]

    Guha, Subhendu; Yang, Chi C.; Yan, Baojie

    2011-03-08

    A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

  9. Electrostatic particle trap for ion beam sputter deposition

    DOE Patents [OSTI]

    Vernon, Stephen P.; Burkhart, Scott C.

    2002-01-01

    A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.

  10. Carbon nanotube forests growth using catalysts from atomic layer deposition

    SciTech Connect (OSTI)

    Chen, Bingan; Zhang, Can; Esconjauregui, Santiago; Xie, Rongsi; Zhong, Guofang; Robertson, John; Bhardwaj, Sunil; Cepek, Cinzia

    2014-04-14

    We have grown carbon nanotubes using Fe and Ni catalyst films deposited by atomic layer deposition. Both metals lead to catalytically active nanoparticles for growing vertically aligned nanotube forests or carbon fibres, depending on the growth conditions and whether the substrate is alumina or silica. The resulting nanotubes have narrow diameter and wall number distributions that are as narrow as those grown from sputtered catalysts. The state of the catalyst is studied by in-situ and ex-situ X-ray photoemission spectroscopy. We demonstrate multi-directional nanotube growth on a porous alumina foam coated with Fe prepared by atomic layer deposition. This deposition technique can be useful for nanotube applications in microelectronics, filter technology, and energy storage.

  11. Geology of the Florida Canyon gold deposit, Pershing County,...

    Open Energy Info (EERE)

    Pershing County, Nevada, in: Gold and Silver Deposits of Western Nevada Authors Hastings, J.S., Burkhart, T.H., and Richardson and R.E. Published Geological Society of Nevada 1993...

  12. Fabrication of solid oxide fuel cell by electrochemical vapor deposition

    DOE Patents [OSTI]

    Riley, B.; Szreders, B.E.

    1988-04-26

    In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (/approximately/1100/degree/ /minus/ 1300/degree/C) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20--50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

  13. Method of depositing buffer layers on biaxially textured metal...

    Office of Scientific and Technical Information (OSTI)

    eu; gd; tb; tm; resup1subx; resup2sub1-xsub2; osub3; buffer; layer; deposited; sol-gel; metal-organic; decomposition; laminate; article; layer; ybco; resup1subx; ...

  14. Fabrication of solid oxide fuel cell by electrochemical vapor deposition

    DOE Patents [OSTI]

    Brian, Riley; Szreders, Bernard E.

    1989-01-01

    In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (approximately 1100.degree.-1300.degree. C.) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20-50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

  15. Programmable nanometer-scale electrolytic metal deposition and depletion

    DOE Patents [OSTI]

    Lee, James Weifu; Greenbaum, Elias

    2002-09-10

    A method of nanometer-scale deposition of a metal onto a nanostructure includes the steps of: providing a substrate having thereon at least two electrically conductive nanostructures spaced no more than about 50 .mu.m apart; and depositing metal on at least one of the nanostructures by electric field-directed, programmable, pulsed electrolytic metal deposition. Moreover, a method of nanometer-scale depletion of a metal from a nanostructure includes the steps of providing a substrate having thereon at least two electrically conductive nanostructures spaced no more than about 50 .mu.m apart, at least one of the nanostructures having a metal disposed thereon; and depleting at least a portion of the metal from the nanostructure by electric field-directed, programmable, pulsed electrolytic metal depletion. A bypass circuit enables ultra-finely controlled deposition.

  16. Surface treatment of nanocrystal quantum dots after film deposition

    DOE Patents [OSTI]

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

  17. Methods of coping with silica deposition - the PNOC experience

    SciTech Connect (OSTI)

    Candelaria, M.N.R.; Garcia, S.E.; Baltazar, A.D.J. Jr.; Solis, R.P.

    1996-12-31

    Several methods of coping with silica deposition from geothermal waters have been undertaken by PNOC-EDC to maximize Power Output from these fluids. Initially, the problem of amorphous silica deposition in surface pipelines and the reinjection well was prevented by operating the production separators at pressures higher or equal to amorphous silica saturation. However, increasing demands for additional power and stringent environmental controls have dictated the need to find alternative methods of coping with silica deposition. Several options have been studied and tested to be able to optimize fluid utilization for production. These include: acid treatment polymerization and deposition of silica in surface ponds or sumps, and chemical inhibition. As each brine is unique, methodologies used for mitigation of the silica problem have been varied.

  18. Particle deposition in ventilation ducts: Connectors, bends anddeveloping flow

    SciTech Connect (OSTI)

    Sippola, Mark R.; Nazaroff, William W.

    2004-03-01

    In ventilation duct flow the turbulent flow profile is commonly disturbed or not fully developed and these conditions are likely to influence particle deposition to duct surfaces. Particle deposition rates at eight S-connectors, in two 90{sup o} duct bends and in two ducts where the turbulent flow profile was not fully developed were measured in a laboratory duct system with both galvanized steel and internally insulated ducts with hydraulic diameters of 15.2 cm. In the steel duct system, experiments with nominal particle diameters of 1, 3, 5, 9 and 16 {micro}m were conducted at each of three nominal air speeds: 2.2, 5.3 and 9.0 m/s. In the insulated duct system, deposition of particles with nominal diameters of 1, 3, 5, 8 and 13 {micro}m was measured at nominal air speeds of 2.2, 5.3 and 8.8 m/s. Fluorescent techniques were used to directly measure the deposition velocities of monodisperse fluorescent particles to duct surfaces. Deposition at S-connectors, in bends and in straight ducts with developing turbulence was often greater than deposition in straight ducts with fully developed turbulence for equal particle sizes, air speeds and duct surface orientations. Deposition rates at all locations were found to increase with an increase in particle size or air speed. High deposition rates at S-connectors resulted from impaction and these rates were nearly independent of the orientation of the S-connector. Deposition rates in the two 90{sup o} bends differed by more than an order of magnitude in some cases, probably because of the difference in turbulence conditions at the bend inlets. In straight steel ducts where the turbulent flow profile was developing, the deposition enhancement relative to fully developed turbulence generally increased with air speed and decreased with downstream distance from the duct inlet. This enhancement was greater at the duct ceiling and wall than at the duct floor. In insulated ducts, deposition enhancement was less pronounced overall than in steel ducts. Trends that were observed in steel ducts were present, but weaker, in insulated ducts.

  19. Chrome Deposit Corporation and the University of Delaware IAC: Another

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Efficiency Success Story | Department of Energy Chrome Deposit Corporation and the University of Delaware IAC: Another Energy Efficiency Success Story Chrome Deposit Corporation and the University of Delaware IAC: Another Energy Efficiency Success Story November 2, 2011 - 2:11pm Addthis Pictured left to right: University of Delaware students Joseph Camp and Nicole Suto; Keith Goossen, director of the Industrial Assessment Center; and Cesar Duarte, University of Delaware grad student.

  20. Electroless Atomic Layer Deposition: A Scalable Approach to Surface

    Office of Scientific and Technical Information (OSTI)

    Modified Metal Powders. (Journal Article) | SciTech Connect Electroless Atomic Layer Deposition: A Scalable Approach to Surface Modified Metal Powders. Citation Details In-Document Search Title: Electroless Atomic Layer Deposition: A Scalable Approach to Surface Modified Metal Powders. Abstract not provided. Authors: Cappillino, Patrick ; Robinson, David ; El Gabaly Marquez, Farid ; Sugar, Joshua Daniel ; Cai, Trevor ; Stickney, John ; Liu, Zhi Publication Date: 2014-01-01 OSTI Identifier:

  1. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

    DOE Patents [OSTI]

    Lowden, R.A.

    1994-04-05

    A process for chemical vapor deposition of crystalline silicon nitride is described which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide. 5 figures.

  2. Method of depositing buffer layers on biaxially textured metal substrates

    Office of Scientific and Technical Information (OSTI)

    (Patent) | SciTech Connect Method of depositing buffer layers on biaxially textured metal substrates Citation Details In-Document Search Title: Method of depositing buffer layers on biaxially textured metal substrates × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in energy

  3. Methods of electrophoretic deposition for functionally graded porous

    Office of Scientific and Technical Information (OSTI)

    nanostructures and systems thereof (Patent) | SciTech Connect Methods of electrophoretic deposition for functionally graded porous nanostructures and systems thereof Citation Details In-Document Search Title: Methods of electrophoretic deposition for functionally graded porous nanostructures and systems thereof In one embodiment, an aerogel includes a layer of shaped particles having a particle packing density gradient in a thickness direction of the layer, wherein the shaped particles are

  4. Orderly Deposition of Uncontaminated Graphene - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Technologies Industrial Technologies Advanced Materials Advanced Materials Find More Like This Return to Search Orderly Deposition of Uncontaminated Graphene Lawrence Berkeley National Laboratory Contact LBL About This Technology Technology Marketing SummaryXiaogan Liang of Berkeley Lab has invented an inexpensive, high-throughput process for depositing pure few-layer-graphene (FLG) in a desired pattern onto substrates, such as silicon wafers. This method uses electrostatic forces to

  5. The Electrical Properties of Native and Deposited Thin Aluminum Oxide

    Office of Scientific and Technical Information (OSTI)

    Layers on Aluminum: Hydration Effects (Conference) | SciTech Connect Conference: The Electrical Properties of Native and Deposited Thin Aluminum Oxide Layers on Aluminum: Hydration Effects Citation Details In-Document Search Title: The Electrical Properties of Native and Deposited Thin Aluminum Oxide Layers on Aluminum: Hydration Effects × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical

  6. Optical and infrared properties of glancing angle deposited nanostructured

    Office of Scientific and Technical Information (OSTI)

    tungsten films (Journal Article) | SciTech Connect Optical and infrared properties of glancing angle deposited nanostructured tungsten films Citation Details In-Document Search Title: Optical and infrared properties of glancing angle deposited nanostructured tungsten films Authors: Ungaro, Craig [1] ; Shah, Ankit [1] ; Kravchenko, Ivan I [2] ; Hensley, Dale K [2] ; Gray, Stephen K. [3] ; Gupta, Mool C. [1] + Show Author Affiliations University of Virginia, Charlottesville ORNL Argonne

  7. Precursors for the polymer-assisted deposition of films

    DOE Patents [OSTI]

    McCleskey, Thomas M.; Burrell, Anthony K.; Jia, Quanxi; Lin, Yuan

    2013-09-10

    A polymer assisted deposition process for deposition of metal oxide films is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  8. Process for thin film deposition of cadmium sulfide

    DOE Patents [OSTI]

    Muruska, H. Paul; Sansregret, Joseph L.; Young, Archie R.

    1982-01-01

    The present invention teaches a process for depositing layers of cadmium sulfide. The process includes depositing a layer of cadmium oxide by spray pyrolysis of a cadmium salt in an aqueous or organic solvent. The oxide film is then converted into cadmium sulfide by thermal ion exchange of the O.sup.-2 for S.sup.-2 by annealing the oxide layer in gaseous sulfur at elevated temperatures.

  9. EGR Cooler Fouling - Visualization of Deposition and Removal Mechanis |

    Broader source: Energy.gov (indexed) [DOE]

    Department of Energy Presents experimental data on exhaust gas recirculation(EGR) cooler fouling using new test apparatus that allows for in-situ observation of deposition and removal processes PDF icon deer11_styles.pdf More Documents & Publications Factors Impacting EGR Cooler Fouling - Main Effects and Interactions Materials Issues Associated with EGR Systems (Agreement ID:18571) EGR Cooler Deposit Analysis

  10. Eulerian CFD Models to Predict Thermophoretic Deposition of Soot Particles

    Broader source: Energy.gov (indexed) [DOE]

    in EGR Coolers | Department of Energy This paper describes an Eulerian axisymmetric method in Fluent(R) to predict the overall heat transfer reduction of a surrogate tube due to thermophoretic deposition of submicron particles. PDF icon deer11_abarham.pdf More Documents & Publications Vehicle Technologies Office Merit Review 2014: Materials Issues Associated with EGR Systems (Agreement ID:18571) Project ID:18518 EGR Cooler Fouling - Visualization of Deposition and Removal Mechanis EGR

  11. Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations

    SciTech Connect (OSTI)

    Salinger, A.G.; Shadid, J.N.; Hutchinson, S.A.

    1998-01-01

    A numerical analysis of the deposition of gallium from trimethylgallium (TMG) and arsine in a horizontal CVD reactor with tilted susceptor and a three inch diameter rotating substrate is performed. The three-dimensional model includes complete coupling between fluid mechanics, heat transfer, and species transport, and is solved using an unstructured finite element discretization on a massively parallel computer. The effects of three operating parameters (the disk rotation rate, inlet TMG fraction, and inlet velocity) and two design parameters (the tilt angle of the reactor base and the reactor width) on the growth rate and uniformity are presented. The nonlinear dependence of the growth rate uniformity on the key operating parameters is discussed in detail. Efficient and robust algorithms for massively parallel reacting flow simulations, as incorporated into our analysis code MPSalsa, make detailed analysis of this complicated system feasible.

  12. 1987 wet deposition temporal and spatial patterns in North America

    SciTech Connect (OSTI)

    Simpson, J.C.; Olsen, A.R.

    1990-03-01

    The focus of this report is on North American wet deposition temporal patterns from 1979 to 1987 and spatial patterns for 1987. The report investigates the patterns of annual precipitation-weighted average concentration and annual deposition for nine ion species: hydrogen, sulfate, nitrate, ammonium, calcium, chloride, sodium, potassium, and magnesium. Data are from the Acid Deposition System (ADS) for the statistical reporting of North American deposition data which includes the National Atmospheric Deposition Program/National Trends Network (NADP/NTN), the MAP3S precipitation chemistry network, the Utility Acid Precipitation Study Program (UAPSP), the Canadian Precipitation Monitoring Network (CAPMoN), and the daily and 4-weekly Acidic Precipitation in Ontario Study (APIOS-D and APIOS-C). Mosaic maps, based on surface estimation using kriging, display concentration and deposition spatial patterns of pH, hydrogen, sulfate, nitrate, ammonium, and calcium ion species for 1987 annual, winter, and summer periods. The temporal pattern analyses use a subset of 39 sites over a 9-year (1979--1987) period and an expanded subset of 140 sites with greater spatial coverage over a 6-year (1982--1987) period. 68 refs., 15 figs., 15 tabs.

  13. 1986 wet deposition temporal and spatial patterns in North America

    SciTech Connect (OSTI)

    Olsen, A.R.

    1989-07-01

    The focus of this report is on North American wet deposition temporal patterns from 1979 to 1986 and spatial patterns for 1986. The report provides statistical distribution summaries of annual precipitation-weighted average concentration and annual deposition for nine ion species: hydrogen, sulfate, nitrate, ammonium, calcium, chloride, sodium, potassium, and magnesium. The data in the report are from the Acid Depositing System (ADS) for the statistical reporting of North American deposition data. Isopleth maps, based on surface estimation using kriging, display concentration and deposition spatial patterns of pH, hydrogen, sulfate, nitrate, ammonium, and calcium ion species for 1986 annual, winter, and summer periods. The temporal pattern analyses use a subset of 30 sites over an 8-year (1979-1986) period and an expanded subset of 137 sites with greater spatial coverage over a 5-year (1982-1986) period. The 8-year period represents the longest period with wet deposition monitoring data unavailable that has a sufficient number of sites with data of known quality to allow a descriptive summary of annual temporal patterns. 19 refs., 105 figs., 29 tabs.

  14. Process maps for plasma spray. Part II: Deposition and properties

    SciTech Connect (OSTI)

    XIANGYANG,JIANG; MATEJICEK,JIRI; KULKARNI,ANAND; HERMAN,HERBERT; SAMPATH,SANJAY; GILMORE,DELWYN L.; NEISER JR.,RICHARD A

    2000-03-28

    This is the second paper of a two part series based on an integrated study carried out at the State University of New York at Stony Brook and Sandia National Laboratories. The goal of the study is the fundamental understanding of the plasma-particle interaction, droplet/substrate interaction, deposit formation dynamics and microstructure development as well as the deposit property. The outcome is science-based relationships, which can be used to link processing to performance. Molybdenum splats and coatings produced at 3 plasma conditions and three substrate temperatures were characterized. It was found that there is a strong mechanical/thermal interaction between droplet and substrate, which builds up the coatings/substrate adhesion. Hardness, thermal conductivity, and modulus increase, while oxygen content and porosity decrease with increasing particle velocity. Increasing deposition temperature resulted in dramatic improvement in coating thermal conductivity and hardness as well as increase in coating oxygen content. Indentation reveals improved fracture resistance for the coatings prepared at higher deposition temperature. Residual stress was significantly affected by deposition temperature, although not significant by particle energy within the investigated parameter range. Coatings prepared at high deposition temperature with high-energy particles suffered considerably less damage in wear tests. Possible mechanisms behind these changes are discussed within the context of relational maps which are under development.

  15. Natural mercury isotope variation in coal deposits and organic soils

    SciTech Connect (OSTI)

    Abir, Biswas; Joel D. Blum; Bridget A. Bergquist; Gerald J. Keeler; Zhouqing Xie

    2008-11-15

    There is a need to distinguish among sources of Hg to the atmosphere in order to more fully understand global Hg pollution. In this study we investigate whether coal deposits within the United States, China, and Russia-Kazakhstan, which are three of the five greatest coal-producing regions, have diagnostic Hg isotopic fingerprints that can be used to discriminate among Hg sources. We also investigate the Hg isotopic composition of modern organic soil horizons developed in areas distant from point sources of Hg in North America. Mercury stored in coal deposits displays a wide range of both mass dependent fractionation and mass independent fractionation. {delta}{sup 202}Hg varies in coals by 3{per_thousand} and {Delta}{sup 201}Hg varies by 0.9{per_thousand}. Combining these two Hg isotope signals results in what may be a unique isotopic 'fingerprint' for many coal deposits. Mass independent fractionation of mercury has been demonstrated to occur during photochemical reactions of mercury. This suggests that Hg found in most coal deposits was subjected to photochemical reduction near the Earth's surface prior to deposition. The similarity in MDF and MIF of modern organic soils and coals from North America suggests that Hg deposition from coal may have imprinted an isotopic signature on soils. This research offers a new tool for characterizing mercury inputs from natural and anthropogenic sources to the atmosphere and provides new insights into the geochemistry of mercury in coal and soils. 35 refs., 2 figs., 1 tab.

  16. Multi-model Mean Nitrogen and Sulfur Deposition from the Atmospheric...

    Office of Scientific and Technical Information (OSTI)

    Multi-model Mean Nitrogen and Sulfur Deposition from the Atmospheric Chemistry and Climate ... Title: Multi-model Mean Nitrogen and Sulfur Deposition from the Atmospheric Chemistry and ...

  17. Method and apparatus for removing and preventing window deposition during photochemical vapor deposition (photo-CVD) processes

    DOE Patents [OSTI]

    Tsuo, Simon; Langford, Alison A.

    1989-01-01

    Unwanted build-up of the film deposited on the transparent light-transmitting window of a photochemical vacuum deposition (photo-CVD) chamber is eliminated by flowing an etchant into the part of the photolysis region in the chamber immediately adjacent the window and remote from the substrate and from the process gas inlet. The respective flows of the etchant and the process gas are balanced to confine the etchant reaction to the part of the photolysis region proximate to the window and remote from the substrate. The etchant is preferably one that etches film deposit on the window, does not etch or affect the window itself, and does not produce reaction by-products that are deleterious to either the desired film deposited on the substrate or to the photolysis reaction adjacent the substrate.

  18. Method and apparatus for removing and preventing window deposition during photochemical vapor deposition (photo-CVD) processes

    DOE Patents [OSTI]

    Tsuo, S.; Langford, A.A.

    1989-03-28

    Unwanted build-up of the film deposited on the transparent light-transmitting window of a photochemical vacuum deposition (photo-CVD) chamber is eliminated by flowing an etchant into the part of the photolysis region in the chamber immediately adjacent the window and remote from the substrate and from the process gas inlet. The respective flows of the etchant and the process gas are balanced to confine the etchant reaction to the part of the photolysis region proximate to the window and remote from the substrate. The etchant is preferably one that etches film deposit on the window, does not etch or affect the window itself, and does not produce reaction by-products that are deleterious to either the desired film deposited on the substrate or to the photolysis reaction adjacent the substrate. 3 figs.

  19. Ash Deposit Formation and Deposit Properties. A Comprehensive Summary of Research Conducted at Sandia's Combustion Research Facility

    SciTech Connect (OSTI)

    Larry L. Baxter

    2000-08-01

    This report summarizes experimental and theoretical work performed at Sandia's Combustion Research Facility over the past eight years on the fate of inorganic material during coal combustion. This work has been done under four broad categories: coal characterization, fly ash formation, ash deposition, and deposit property development. The objective was to provide sufficient understanding of these four areas to be able to predict coal behavior in current and advanced conversion systems. This work has led to new characterization techniques for fuels that provide, for the first time, systematic and species specific information regarding the inorganic material. The transformations of inorganic material during combustion can be described in terms of the net effects of the transformations of these individual species. Deposit formation mechanisms provide a framework for predicting deposition rates for abroad range of particle sizes. Predictions based on these rates many times are quite accurate although there are important exceptions. A rigorous framework for evaluating deposit has been established. Substantial data have been obtained with which to exercise this framework, but this portion of the work is less mature than is any other. Accurate prediction of deposit properties as functions of fuel properties, boiler design, and boiler operating conditions represents the single most critical area where additional research is needed.

  20. Uranium deposition study on aluminum: results of early tests

    SciTech Connect (OSTI)

    Hughes, M.R.; Nolan, T.A.

    1984-06-19

    Laboratory experiments to quantify uranium compound deposition on Aluminum 3003 test coupons have been initiated. These experiments consist of exposing the coupons to normal assay UF/sub 6/ (0.7% /sup 235/U) in nickel reaction vessels under various conditions of UF/sub 6/ pressure, temperature, and time. To-date, runs from 5 minutes to 2000 hr have been completed at a UF/sub 6/ pressure of 100 torr and at a temperature of 60/sup 0/C. Longer exposure times are in progress. Initial results indicated that a surface film of uranium, primarily as uranyl fluoride (UO/sub 2/F/sub 2/), is deposited very soon after exposure to UF/sub 6/. In a five minute UF/sub 6/ exposure at a temperature of 60/sup 0/C, an average of 2.9 ..mu..g U/cm/sup 2/ was deposited; after 24 hr the deposit typically increased to 5.0 ..mu..g/cm/sup 2/ and then increased to 10.4 ..mu..g/cm/sup 2/ after 2000 hr. This amount of deposit (at 2000 hr exposure) would contribute roughly 10 to 20% to the total 186 keV gamma signal obtained from a GCEP product header pipe being operated at UF/sub 6/ pressures of 2 to 5 torr. The amount of isotopic exchange which would occur in the deposit in the event that HEU and LEU productions were alternated is considered. It is felt that isotopic exchange would not occur to any significant amount within the fixed deposit during relatively short HEU production periods since the HEU would be present primarily as adsorbed UF/sub 6/ molecules on the surface of the deposit. The adsorbed HEU molecules would be removed by evacuation and diluted by LEU production. Major increases in the deposit count would be observed if a leak occurred or moisture was introduced into the system while HEU was being produced.

  1. Electron microscopy study of direct laser deposited IN718

    SciTech Connect (OSTI)

    Ding, R.G.; Huang, Z.W.; Li, H.Y.; Mitchell, I.; Baxter, G.; Bowen, P.

    2015-08-15

    The microstructure of direct laser deposited (DLD) IN718 has been investigated in detail using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results confirm that the dendrite core microstructure can be linked to the cooling rate experienced during the deposition. A ~ 100 μm wide δ partially dissolved region in the IN718 substrate was observed close to the substrate/deposit boundary. In the deposited IN718, γ/Laves eutectic constituent is the predominant minor microconstituent. Irregular and regular (small) (Nb,Ti)C carbides and a mixture of the carbides and Laves were observed. Most M{sub 3}B{sub 2} borides were nucleated around a (Nb,Ti)C carbide. Needles of δ phase precipitated from the Laves phase were also observed. A complex constituent (of Laves, δ, α-Cr, γ″, and γ matrix) is reported in IN718 for the first time. The formation of α-Cr particles could be related to Cr rejection during the formation and growth of Cr-depleted δ phase. - Highlights: • Secondary phases in IN718 deposits were identified using electron diffraction and EDS. • MC, M{sub 3}B{sub 2}, γ/Laves eutectic and γ/NbC/Laves eutectic were observed. • Needle-like δ phases were precipitated from the Laves phase. • A complex constituent (Laves, δ, α-Cr, γ″ and γ) was reported for the first time.

  2. MODELING OF THERMOPHORETIC SOOT DEPOSITION ANDHYDROCARBON CONDENSATION IN EGR COOLERS

    SciTech Connect (OSTI)

    Abarham, Mehdi; Hoard, John W.; Assanis, Dennis; Styles, Dan; Curtis, Eric W.; Ramesh, Nitia; Sluder, Scott; Storey, John Morse

    2009-01-01

    EGR coolers are effective to reduce NOx emissions from diesel engines due to lower intake charge temperature. EGR cooler fouling reduces heat transfer capacity of the cooler significantly and increases pressure drop across the cooler. Engine coolant provided at 40-90 C is used to cool EGR coolers. The presence of a cold surface in the cooler causes particulate soot deposition and hydrocarbon condensation. The experimental data also indicates that the fouling is mainly caused by soot and hydrocarbons. In this study, a 1-D model is extended to simulate particulate soot and hydrocarbon deposition on a concentric tube EGR cooler with a constant wall temperature. The soot deposition caused by thermophoresis phenomena is taken into account the model. Condensation of a wide range of hydrocarbon molecules are also modeled but the results show condensation of only heavy molecules at coolant temperature. Thermal properties of fouled layer are calculated based on mass fraction of deposited soot and hydrocarbons. The experiments with the same conditions ran to validate the model. Hot EGR gases flow through the inner pipe and the coolant circulates around it in the outer pipe to keep a constant wall temperature. Effectiveness, deposited soot mass, condensed hydrocarbon mass, and pressure drop across the cooler are the parameters that have been compared. The results of the model are in a reasonably good agreement with the experimental results although there are some fields that need to be studied in future to improve the model.

  3. Concept for lightweight spaced-based deposition technology

    SciTech Connect (OSTI)

    Fulton, Michael; Anders, Andre

    2006-02-28

    In this contribution we will describe a technology path to very high quality coatings fabricated in the vacuum of space. To accomplish the ambitious goals set out in NASA's Lunar-Mars proposal, advanced thin-film deposition technology will be required. The ability to deposit thin-film coatings in the vacuum of lunar-space could be extremely valuable for executing this new space mission. Developing lightweight space-based deposition technology (goal:<300 g, including power supply) will enable the future fabrication and repair of flexible large-area space antennae and fixed telescope mirrors for lunar-station observatories. Filtered Cathodic Arc (FCA) is a proven terrestrial energetic thin-film deposition technology that does not need any processing gas but is well suited for ultra-high vacuum operation. Recently, miniaturized cathodic arcs have already been developed and considered for space propulsion. It is proposed to combine miniaturized pulsed FCA technology and robotics to create a robust, enabling space-based deposition system for the fabrication, improvement, and repair of thin films, especially of silver and aluminum, on telescope mirrors and eventually on large area flexible substrates. Using miniature power supplies with inductive storage, the typical low-voltage supply systems used in space are adequate. It is shown that high-value, small area coatings are within the reach of existing technology, while medium and large area coatings are challenging in terms of lightweight technology and economics.

  4. Nanosecond laser-induced phase transitions in pulsed laser deposition-deposited GeTe films

    SciTech Connect (OSTI)

    Sun, Xinxing Thelander, Erik; Lorenz, Pierre; Gerlach, Jürgen W.; Decker, Ulrich; Rauschenbach, Bernd

    2014-10-07

    Phase transformations between amorphous and crystalline states induced by irradiation of pulsed laser deposition grown GeTe thin films with nanosecond laser pulses at 248 nm and pulse duration of 20 ns are studied. Structural and optical properties of the Ge-Te phase-change films were studied by X-ray diffraction and optical reflectivity measurements as a function of the number of laser pulses between 0 and 30 pulses and of the laser fluence up to 195 mJ/cm². A reversible phase transition by using pulse numbers ≥ 5 at a fluence above the threshold fluence between 11 and 14 mJ/cm² for crystallization and single pulses at a fluence between 162 and 182 mJ/cm² for amorphization could be proved. For laser fluences from 36 up to 130 mJ/cm², a high optical contrast of 14.7% between the amorphous and crystalline state is measured. A simple model is used that allows the discussion on the distribution of temperature in dependency on the laser fluence.

  5. Plasma deposited diamond-like carbon films for large neutralarrays

    SciTech Connect (OSTI)

    Brown, I.G.; Blakely, E.A.; Bjornstad, K.A.; Galvin, J.E.; Monteiro, O.R.; Sangyuenyongpipat, S.

    2004-07-15

    To understand how large systems of neurons communicate, we need to develop methods for growing patterned networks of large numbers of neurons. We have found that diamond-like carbon thin films formed by energetic deposition from a filtered vacuum arc carbon plasma can serve as ''neuron friendly'' substrates for the growth of large neural arrays. Lithographic masks can be used to form patterns of diamond-like carbon, and regions of selective neuronal attachment can form patterned neural arrays. In the work described here, we used glass microscope slides as substrates on which diamond-like carbon was deposited. PC-12 rat neurons were then cultured on the treated substrates and cell growth monitored. Neuron growth showed excellent contrast, with prolific growth on the treated surfaces and very low growth on the untreated surfaces. Here we describe the vacuum arc plasma deposition technique employed, and summarize results demonstrating that the approach can be used to form large patterns of neurons.

  6. Deposition of device quality low H content, amorphous silicon films

    DOE Patents [OSTI]

    Mahan, A.H.; Carapella, J.C.; Gallagher, A.C.

    1995-03-14

    A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.

  7. Deposition of device quality low H content, amorphous silicon films

    DOE Patents [OSTI]

    Mahan, Archie H.; Carapella, Jeffrey C.; Gallagher, Alan C.

    1995-01-01

    A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH.sub.4) over a high temperature, 2000.degree. C., tungsten (W) filament in the proximity of a high temperature, 400.degree. C., substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20-30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content.

  8. The NSLS-II Multilayer Laue Lens Deposition System

    SciTech Connect (OSTI)

    Conley, R.; Bouet, N.; Biancarosa, J.; Shen, Q.; Boas, L.; Feraca, J.; Rosenbaum, L.

    2009-08-02

    The NSLS-II[1] program has a requirement for an unprecedented level of x-ray nanofocusing and has selected the wedged multilayer Laue lens[2,3] (MLL) as the optic of choice to meet this goal. In order to fabricate the MLL a deposition system is required that is capable of depositing depth-graded and laterally-graded multilayers with precise thickness control over many thousands of layers, with total film growth in one run up to 100?m thick or greater. This machine design expounds on the positive features of a rotary deposition system[4] constructed previously for MLLs and will contain multiple stationary, horizontally-oriented magnetron sources where a transport will move a substrate back and forth in a linear fashion over shaped apertures at well-defined velocities to affect a multilayer coating.

  9. Low Speed Carbon Deposition Process for Hermetic Optical Fibers

    SciTech Connect (OSTI)

    ABRAMCZYK,JAROSLAW; ARTHUR,SARA E. TALLANT,DAVID R.; HIKANSSON,ADAM S.; LINDHOLM,ERIC A.; LO,JIE

    1999-09-29

    For optical fibers used in adverse environments, a carbon coating is frequently deposited on the fiber surface to prevent water and hydrogen ingression that lead respectively to strength degradation through fatigue and hydrogen-induced attenuation. The deposition of a hermetic carbon coating onto an optical fiber during the draw process holds a particular challenge when thermally-cured specialty coatings are subsequently applied because of the slower drawing rate. In this paper, we report on our efforts to improve the low-speed carbon deposition process by altering the composition and concentration of hydrocarbon precursor gases. The resulting carbon layers have been analyzed for electrical resistance, Raman spectra, coating thickness, and surface roughness, then compared to strength data and dynamic fatigue behavior.

  10. Influence of substrate temperature and deposition rate on the structure of erbium films deposited on glass and a -C substrates

    SciTech Connect (OSTI)

    Savaloni, H.; Player, M.A.; Gu, E.; Marr, G.V. )

    1992-01-01

    The structure of erbium films of 600 nm thickness deposited onto carbon ({ital a}-C) and glass substrates at 0.55 and 2.5 nm/s deposition rates for varying substrate temperatures is investigated. The cross section and surface structures are examined by electron microscope. Energy-dispersive x-ray diffraction is utilized for the structure analysis of these films. Results are compared with the results presented in H. Savaloni, M. A. Player, E. Gu, and G. V. Marr (to be published), for erbium films on molybdenum substrates. It is found that to produce films with strong preferred orientation on glass substrates low deposition rate (0.55 nm/s) is favorable. This is opposite to erbium on molybdenum substrates. The grain size of erbium films produced at higher deposition rate is much larger than those at lower deposition rate. The structure of thin films has implications for performance of multilayer reflectors, and preferred orientation may have other applications to x-ray instrumentation.

  11. Method of depositing buffer layers on biaxially textured metal substrates

    Office of Scientific and Technical Information (OSTI)

    (Patent) | SciTech Connect Method of depositing buffer layers on biaxially textured metal substrates Citation Details In-Document Search Title: Method of depositing buffer layers on biaxially textured metal substrates A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0 Authors: Beach, David B. [1] ; Morrell, Jonathan S. [1] ; Paranthaman, Mariappan [1] ; Chirayil, Thomas [1] ; Specht,

  12. Paragenesis and Geochronology of the Nopal I Uranium Deposit, Mexico

    SciTech Connect (OSTI)

    M. Fayek; M. Ren

    2007-02-14

    Uranium deposits can, by analogy, provide important information on the long-term performance of radioactive waste forms and radioactive waste repositories. Their complex mineralogy and variable elemental and isotopic compositions can provide important information, provided that analyses are obtained on the scale of several micrometers. Here, we present a structural model of the Nopal I deposit as well as petrography at the nanoscale coupled with preliminary U-Th-Pb ages and O isotopic compositions of uranium-rich minerals obtained by Secondary Ion Mass Spectrometry (SIMS). This multi-technique approach promises to provide ''natural system'' data on the corrosion rate of uraninite, the natural analogue of spent nuclear fuel.

  13. Atomic Layer Deposition of L-Alanine Polypeptide

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Fu, Yaqin; Li, Binsong; Jiang, Ying-Bing; Dunphy, Darren R.; Tsai, Andy; Tam, Siu-Yue; Fan, Hongyou Y.; Zhang, Hongxia; Rogers, David; Rempe, Susan; et al

    2014-10-30

    L-Alanine polypeptide thin films were synthesized via atomic layer deposition (ALD). Rather, instead of using an amino acid monomer as the precursor, an L-alanine amino acid derivatized with a protecting group was used to prevent self-polymerization, increase the vapor pressure, and allow linear cycle-by-cycle growth emblematic of ALD. Moreover, the successful deposition of a conformal polypeptide film has been confirmed by FTIR, TEM, and Mass Spectrometry, and the ALD process has been extended to polyvaline.

  14. Defect-Tolerant Diffusion Channels for Mg2+ Ions in Ribbon-Type Borates: Structural Insights into Potential Battery Cathodes MgVBO4 and Mgx Fe2–xB2O5

    SciTech Connect (OSTI)

    Bo, Shou-Hang; Grey, Clare P.; Khalifah, Peter G.

    2015-06-10

    The reversible room temperature intercalation of Mg2+ ions is difficult to achieve, but may offer substantial advantages in the design of next-generation batteries if this electrochemical process can be successfully realized. Two types of quadruple ribbon-type transition metal borates (MgxFe2-xB2O5 and MgVBO4) with high theoretical capacities (186 mAh/g and 360 mAh/g) have been synthesized and structurally characterized through the combined Rietveld refinement of synchrotron and time-of-flight neutron diffraction data. Neither MgVBO4 nor MgxFe2-xB2O5 can be chemically oxidized at room temperature, though Mg can be dynamically removed from the latter phase at elevated temperatures (approximately 200 - 500 °C). Findings show that Mg diffusion in the MgxFe2-xB2O5 structure is more facile for the inner two octahedral sites than for the two outer octahedral sites in the ribbons, a result supported by both the refined site occupancies after Mg removal and by bond valence sum difference map calculations of diffusion paths in the pristine material. Mg diffusion in this pyroborate MgxFe2-xB2O5 framework is also found to be tolerant to the presence of Mg/Fe disorder since Mg ions can diffuse through interstitial channels which bypass Fe-containing sites.

  15. Chemical vapor deposition of fluorine-doped zinc oxide

    DOE Patents [OSTI]

    Gordon, Roy G.; Kramer, Keith; Liang, Haifan

    2000-06-06

    Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

  16. R&D ERL: Photocathode Deposition and Transport System

    SciTech Connect (OSTI)

    Pate, D.; Ben-Zvi, I.; Rao, T.; Burrill, R.; Todd, R.; Smedley, J.; Holmes, D.

    2010-01-01

    The purpose of the photocathode deposition and transport system is to (1) produce a robust, high yield multialkali photocathode and (2) have a method of transporting the multialkali photocathode for insertion into a super conducting RF electron gun. This process is only successful if a sufficient quantum efficiency lifetime of the cathode, which is inserted in the SRF electron gun, is maintained. One important element in producing a multialkali photocathode is the strict vacuum requirements of 10{sup -11} torr to assure success in the production of longlived photocathodes that will not have their QE or lifetime depleted due to residual gas poisoning in a poor vacuum. A cutaway view of our third generation deposition system is shown in figure 1. There are certain design criteria and principles required. One must be able to install, remove, rejuvenate and replace a cathode without exposing the source or cathode to atmosphere. The system must allow one to deposit Cs, K, and Sb on a cathode tip surface at pressures in the 10{sup -10} to 10{sup -9} torr range. The cathode needs to be heated to as high as 850 C for cleaning and maintained at 130 C to 150 C during deposition. There should also be the capability for in-situ QE measurements. In addition the preparation of dispenser photocathodes must be accounted for, thus requiring an ion source for cathode cleaning. Finally the transport cart must be mobile and be able to negotiate the ERL facility labyrinth.

  17. Polymer-assisted aqueous deposition of metal oxide films

    DOE Patents [OSTI]

    Li, DeQuan; Jia, Quanxi

    2003-07-08

    An organic solvent-free process for deposition of metal oxide thin films is presented. The process includes aqueous solutions of necessary metal precursors and an aqueous solution of a water-soluble polymer. After a coating operation, the resultant coating is fired at high temperatures to yield optical quality metal oxide thin films.

  18. Development of Highly Selective Oxidation Catalysts by Atomic Layer Deposition

    Broader source: Energy.gov [DOE]

    This factsheet describes a research project whose goal is to use Atomic Layer Deposition to construct nanostructured catalysts to improve the effectiveness of oxidative dehydrogenation of alkanes. More effective catalysts could enable higher specific conversion rates and result in drastic energy savings - up to 25 trillion Btu per year by 2020.

  19. Molecular layer deposition of alucone films using trimethylaluminum and hydroquinone

    SciTech Connect (OSTI)

    Choudhury, Devika; Sarkar, Shaibal K.; Mahuli, Neha

    2015-01-01

    A hybrid organicinorganic polymer film grown by molecular layer deposition (MLD) is demonstrated here. Sequential exposures of trimethylaluminum [Al(CH{sub 3}){sub 3}] and hydroquinone [C{sub 6}H{sub 4}(OH){sub 2}] are used to deposit the polymeric films, which is a representative of a class of aluminum oxide polymers known as alucones. In-situ quartz crystal microbalance (QCM) studies are employed to determine the growth characteristics. An average growth rate of 4.1 per cycle at 150?C is obtained by QCM and subsequently verified with x-ray reflectivity measurements. Surface chemistry during each MLD-half cycle is studied in depth by in-situ Fourier transform infrared (FTIR) vibration spectroscopy. Self limiting nature of the reaction is confirmed from both QCM and FTIR measurements. The conformal nature of the deposit, typical for atomic layer deposition and MLD, is verified with transmission electron microscopy imaging. Secondary ion mass spectroscopy measurements confirm the uniform elemental distribution along the depth of the films.

  20. Process for depositing hard coating in a nozzle orifice

    DOE Patents [OSTI]

    Flynn, P.L.; Giammarise, A.W.

    1991-10-29

    The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance to erosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice's interior surfaces by the vapor deposited coating formed from the reaction gas. 2 figures.

  1. Apparatus for depositing hard coating in a nozzle orifice

    DOE Patents [OSTI]

    Flynn, P.L.; Giammarise, A.W.

    1995-02-21

    The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance to erosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice`s interior surfaces by the vapor deposited coating formed from the reaction gas. 2 figs.

  2. Apparatus for depositing hard coating in a nozzle orifice

    DOE Patents [OSTI]

    Flynn, Paul L.; Giammarise, Anthony W.

    1995-01-01

    The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance to erosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice's interior surfaces by the vapor deposited coating formed from the reaction gas.

  3. Process for depositing hard coating in a nozzle orifice

    DOE Patents [OSTI]

    Flynn, Paul L.; Giammarise, Anthony W.

    1991-01-01

    The present invention is directed to a process for coating the interior surfaces of an orifice in a substrate that forms a slurry fuel injection nozzle. In a specific embodiment, the nozzle is part of a fuel injection system for metering a coal-water slurry into a large, medium-speed, multi-cylinder diesel engine. In order to retard erosion of the orifice, the substrate is placed in a chemical vapor deposition (CVD) reaction chamber. A reaction gas is passed into the chamber at a gas temperature below its reaction temperature and is directed through the orifice in the substrate. The gas reaction temperature is a temperature at and above which the reaction gas deposits as a coating, and the reaction gas is of a composition whereby improved resistance toerosion by flow of the particulates in the slurry fuel is imparted by the deposited coating. Only the portion of the substrate in proximity to the orifice to be coated is selectively heated to at least the gas reaction temperature for effecting coating of the orifice's interior surfaces by the vapor deposited coating formed from the reaction gas.

  4. Nitrogen Deposition: A Component of Global Change Analyses

    SciTech Connect (OSTI)

    Norby, Richard J.

    1997-12-31

    The global cycles of carbon and nitrogen are being perturbed by human activities that increase the transfer from large pools of nonreactive forms of the elements to reactive forms that are essential to the functioning of the terrestrial biosphere. The cycles are closely linked at all scales, and global change analyses must consider carbon and nitrogen cycles together. The increasing amount of nitrogen originating from fossil fuel combustion and deposited to terrestrial ecosystems as nitrogen oxides could increase the capacity of ecosystems to sequester carbon thereby removing some of the excess carbon dioxide from the atmosphere and slowing the development of greenhouse warming. Several global and ecosystem models have calculated the amount of carbon sequestration that can be attributed to nitrogen deposition based on assumptions about the allocation of nitrogen among ecosystem components with different carbon-nitrogen ratios. They support the premise that nitrogen deposition is responsible for a an increasing terrestrial carbon sink since industrialization began, but there are large uncertainties related to the continued capacity of ecosystems to retain exogenous nitrogen. Whether terrestrial ecosystems continue to sequester additional carbon will depend in part on their response to increasing atmospheric carbon dioxide concentrations, which is widely thought to be constrained by limited nitrogen availability. Ecosystem models generally support the conclusion that the responses of ecosystems to increasing concentrations of carbon dioxide will be larger, and the range of possible responses will be wider, in ecosystems with increased nitrogen inputs originating as atmospheric deposition.

  5. Direct chemical vapor deposition of graphene on dielectric surfaces

    DOE Patents [OSTI]

    Zhang, Yuegang; Ismach, Ariel

    2014-04-29

    A substrate is provided that has a metallic layer on a substrate surface of a substrate. A film made of a two dimensional (2-D) material, such as graphene, is deposited on a metallic surface of the metallic layer. The metallic layer is dewet and/or removed to provide the film on the substrate surface.

  6. Method of depositing wide bandgap amorphous semiconductor materials

    DOE Patents [OSTI]

    Ellis, Jr., Frank B.; Delahoy, Alan E.

    1987-09-29

    A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.

  7. Aerosol chemical vapor deposition of metal oxide films

    DOE Patents [OSTI]

    Ott, Kevin C.; Kodas, Toivo T.

    1994-01-01

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said FIELD OF THE INVENTION The present invention relates to the field of film coating deposition techniques, and more particularly to the deposition of multicomponent metal oxide films by aerosol chemical vapor deposition. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  8. Enhanced selectivity of zeolites by controlled carbon deposition

    DOE Patents [OSTI]

    Nenoff, Tina M.; Thoma, Steven G.; Kartin, Mutlu

    2006-05-09

    A method for carbonizing a zeolite comprises depositing a carbon coating on the zeolite pores by flowing an inert carrier gas stream containing isoprene through a regenerated zeolite at elevated temperature. The carbonized zeolite is useful for the separation of light hydrocarbon mixtures due to size exclusion and the differential adsorption properties of the carbonized zeolite.

  9. An Optimized Nanoparticle Separator Enabled by Electron Beam Induced Deposition

    SciTech Connect (OSTI)

    Fowlkes, Jason Davidson [ORNL; Doktycz, Mitchel John [ORNL; Rack, P. D. [University of Tennessee, Knoxville (UTK)

    2010-01-01

    Size based separations technologies will inevitably benefit from advances in nanotechnology. Direct write nanofabrication provides a useful mechanism to deposit/etch nanoscale elements in environments otherwise inaccessible to conventional nanofabrication techniques. Here, electron beam induced deposition (EBID) was used to deposit an array of nanoscale features in a 3D environment with minimal material proximity effects outside the beam interaction region (BIR). Specifically, the membrane component of a nanoparticle separator was fabricated by depositing a linear array of sharply tipped nanopillars, with a singular pitch, designed for sub 50nm nanoparticle permeability. The nanopillar membrane was used in a dual capacity to control the flow of nanoparticles in the transaxial direction of the array while facilitating the sealing of the cellular sized compartment in the paraxial direction. An optimized growth recipe resulted which (1) maximized the growth efficiency of the membrane (which minimizes proximity effects), (2) preserved the fidelity of spacing between nanopillars (which maximizes the size based gating quality of the membrane) while (3) maintaining sharp nanopillar apexes for impaling an optically transparent polymeric lid critical for device sealing.

  10. Prevention of deleterious deposits in a coal liquefaction system

    DOE Patents [OSTI]

    Carr, Norman L.; Prudich, Michael E.; King, Jr., William E.; Moon, William G.

    1984-07-03

    A process for preventing the formation of deleterious coke deposits on the walls of coal liquefaction reactor vessels involves passing hydrogen and a feed slurry comprising feed coal and recycle liquid solvent to a coal liquefaction reaction zone while imparting a critical mixing energy of at least 3500 ergs per cubic centimeter of reaction zone volume per second to the reacting slurry.

  11. Method of deposition of silicon carbide layers on substrates

    DOE Patents [OSTI]

    Angelini, P.; DeVore, C.E.; Lackey, W.J.; Blanco, R.E.; Stinton, D.P.

    1982-03-19

    A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at 800 to 1050/sup 0/C when the substrates have been confined within a suitable coating environment.

  12. Deposition of biological aerosols on HVAC heat exchangers

    SciTech Connect (OSTI)

    Siegel, Jeffrey; Walker, Ian

    2001-09-01

    Many biologically active materials are transported as bioaerosols 1-10 {micro}m in diameter. These particles can deposit on cooling and heating coils and lead to serious indoor air quality problems. This paper investigates several of the mechanisms that lead to aerosol deposition on fin and tube heat exchangers. A model has been developed that incorporates the effects of several deposition mechanisms, including impaction, Brownian and turbulent diffusion, turbophoresis, thermophoresis, diffusiophoresis, and gravitational settling. The model is applied to a typical range of air velocities that are found in commercial and residential HVAC systems 1 - 6 m/s (200 - 1200 ft/min), particle diameters from 1 - 8 {micro}m, and fin spacings from 3.2 - 7.9 fins/cm (8 - 16 fins/inch or FPI). The results from the model are compared to results from an experimental apparatus that directly measures deposition on a 4.7 fins/cm (12 FPI) coil. The model agrees reasonably well with this measured data and suggests that cooling coils are an important sink for biological aerosols and consequently a potential source of indoor air quality problems.

  13. CHEMICAL SOLUTION DEPOSITION BASED OXIDE BUFFERS AND YBCO COATED CONDUCTORS

    SciTech Connect (OSTI)

    Paranthaman, Mariappan Parans

    2011-01-01

    We have reviewed briefly the growth of buffer and high temperature superconducting oxide thin films using a chemical solution deposition (CSD) method. In the Rolling-Assisted Biaxially Textured Substrates (RABiTS) process, developed at Oak Ridge National Laboratory, utilizes the thermo mechanical processing to obtain the flexible, biaxially oriented copper, nickel or nickel-alloy substrates. Buffers and Rare Earth Barium Copper Oxide (REBCO) superconductors have been deposited epitaxially on the textured nickel alloy substrates. The starting substrate serves as a template for the REBCO layer, which has substantially fewer weak links. Buffer layers play a major role in fabricating the second generation REBCO wire technology. The main purpose of the buffer layers is to provide a smooth, continuous and chemically inert surface for the growth of the REBCO film, while transferring the texture from the substrate to the superconductor layer. To achieve this, the buffer layers need to be epitaxial to the substrate, i.e. they have to nucleate and grow in the same bi-axial texture provided by the textured metal foil. The most commonly used RABiTS multi-layer architectures consist of a starting template of biaxially textured Ni-5 at.% W (Ni-W) substrate with a seed (first) layer of Yttrium Oxide (Y2O3), a barrier (second) layer of Yttria Stabilized Zirconia (YSZ), and a Cerium Oxide (CeO2) cap (third) layer. These three buffer layers are generally deposited using physical vapor deposition (PVD) techniques such as reactive sputtering. On top of the PVD template, REBCO film is then grown by a chemical solution deposition. This article reviews in detail about the list of oxide buffers and superconductor REBCO films grown epitaxially on single crystal and/or biaxially textured Ni-W substrates using a CSD method.

  14. Fundamental studies of the mechanisms of slag deposit formation: Final report

    SciTech Connect (OSTI)

    Austin, L.G.; Benson, S.; Rabinovich, A.; Tangsathitkulchai, M.; Schobert H.H.

    1987-07-01

    The kinetics of ash deposition on utility boilers have been studied. A heated tube furnace system was used in the study. Areas of consideration in the deposition mechanics were: close space knowledge of chemical composition and distribution of inorganic constituents in coal, transformations and reactions of the inorganic constituents in the flame, ash transport mechanisms, initial adhesion of ash particles to heat transfer surfaces and subsequently to each other to form a deposit, and further interactions of the deposited ash to grow a strong deposit. Interactions of deposited ash that cause changes in physical and chemical properties in an aged deposit are due to processes such as sintering, chemical reactions, and melting. The degree of these changes increases as the deposit grows from the heat transfer surfaces where it forms. All of these changes during the deposit formation process are coal-specific and are strongly dependent on the boiler configuration and operating conditions. 18 refs., 55 figs., 42 tabs.

  15. Underpotential deposition-mediated layer-by-layer growth of thin films

    DOE Patents [OSTI]

    Wang, Jia Xu; Adzic, Radoslav R.

    2015-05-19

    A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves the use of underpotential deposition of a first element to mediate the growth of a second material by overpotential deposition. Deposition occurs between a potential positive to the bulk deposition potential for the mediating element where a full monolayer of mediating element forms, and a potential which is less than, or only slightly greater than, the bulk deposition potential of the material to be deposited. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis. This process is especially suitable for the formation of a catalytically active layer on core-shell particles for use in energy conversion devices such as fuel cells.

  16. Electroactive polyaniline film deposited from nonaqueous media; Effect of mixed organic solvent on polyaniline deposition and its battery performance

    SciTech Connect (OSTI)

    Osaka, T.; Nakajima, T.; Shiota, K.; Momma, T. )

    1991-10-01

    This paper reports on electroactive polyaniline (PAn) films which were deposited from PC (propylene carbonate)-Ec (thylene carbonate) and PC-DME (1, 2-dimethoxyethane) mixed polymerization solutions containing aniline, CF{sub 3}COOH, and LiClO{sub 4}. Higher dielectric constant solvents are necessary to deposit the PAn film where protons, dissociated from the acid, initiate the polymerization of aniline. Various PAn films deposited in the PC, the PC-EC (50 mole percent), and the PC-DME (50 volume percent) solutions were used for the cathode materials of the rechargeable lithium batteries. Charge capacity and discharge ability of the Li/PAn batteries in the PC-LiClO{sub 4} electrolyte solution are almost the same, regardless of the polymerization solvents such as PC {approx} PC-EC {ge} PC-DME and PC-EC {ge} PC-DME {approx} PC. The mixed solvent electrolyte solution effect on the Li/PAn (polymerized in the PC solution) batteries becomes much larger such as PC-DME {gt} PC-EC {gt} PC. Moreover, the electrochemical kinetic factors of the PAn films deposited in the various mixed polymerization solutions and also in the different electrolytes were experimentally determined by measuring the ac impedance. The results of the ac impedance analysis of each PAn film correlate well with the battery performances of Li/PAn cells.

  17. Inert gas enhanced laser-assisted purification of platinum electron-beam-induced deposits

    SciTech Connect (OSTI)

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; Fowlkes, Jason Davidson; Rack, Philip D.

    2015-06-30

    Electron-beam-induced deposition patterns, with composition of PtC5, were purified using a pulsed laser-induced purification reaction to erode the amorphous carbon matrix and form pure platinum deposits. Enhanced mobility of residual H2O molecules via a localized injection of inert Ar–H2 (4%) is attributed to be the reactive gas species for purification of the deposits. Surface purification of deposits was realized at laser exposure times as low as 0.1 s. The ex situ purification reaction in the deposit interior was shown to be rate-limited by reactive gas diffusion into the deposit, and deposit contraction associated with the purification process caused some loss of shape retention. To circumvent the intrinsic flaws of the ex situ anneal process, in situ deposition and purification techniques were explored that resemble a direct write atomic layer deposition (ALD) process. First, we explored a laser-assisted electron-beam-induced deposition (LAEBID) process augmented with reactive gas that resulted in a 75% carbon reduction compared to standard EBID. Lastly, a sequential deposition plus purification process was also developed and resulted in deposition of pure platinum deposits with high fidelity and shape retention.

  18. ZrN coatings deposited by high power impulse magnetron sputtering and cathodic arc techniques

    SciTech Connect (OSTI)

    Purandare, Yashodhan Ehiasarian, Arutiun; Hovsepian, Papken; Santana, Antonio

    2014-05-15

    Zirconium nitride (ZrN) coatings were deposited on 1??m finish high speed steel and 316L stainless steel test coupons. Cathodic Arc (CA) and High Power Impulse Magnetron Sputtering (HIPIMS) + Unbalanced Magnetron Sputtering (UBM) techniques were utilized to deposit coatings. CA plasmas are known to be rich in metal and gas ions of the depositing species as well as macroparticles (droplets) emitted from the arc sports. Combining HIPIMS technique with UBM in the same deposition process facilitated increased ion bombardment on the depositing species during coating growth maintaining high deposition rate. Prior to coating deposition, substrates were pretreated with Zr{sup +} rich plasma, for both arc deposited and HIPIMS deposited coatings, which led to a very high scratch adhesion value (L{sub C2}) of 100 N. Characterization results revealed the overall thickness of the coatings in the range of 2.5??m with hardness in the range of 3040?GPa depending on the deposition technique. Cross-sectional transmission electron microscopy and tribological experiments such as dry sliding wear tests and corrosion studies have been utilized to study the effects of ion bombardment on the structure and properties of these coatings. In all the cases, HIPIMS assisted UBM deposited coating fared equal or better than the arc deposited coatings, the reasons being discussed in this paper. Thus H+U coatings provide a good alternative to arc deposited where smooth, dense coatings are required and macrodroplets cannot be tolerated.

  19. Inert gas enhanced laser-assisted purification of platinum electron-beam-induced deposits

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; Fowlkes, Jason Davidson; Rack, Philip D.

    2015-06-30

    Electron-beam-induced deposition patterns, with composition of PtC5, were purified using a pulsed laser-induced purification reaction to erode the amorphous carbon matrix and form pure platinum deposits. Enhanced mobility of residual H2O molecules via a localized injection of inert Ar–H2 (4%) is attributed to be the reactive gas species for purification of the deposits. Surface purification of deposits was realized at laser exposure times as low as 0.1 s. The ex situ purification reaction in the deposit interior was shown to be rate-limited by reactive gas diffusion into the deposit, and deposit contraction associated with the purification process caused some lossmore » of shape retention. To circumvent the intrinsic flaws of the ex situ anneal process, in situ deposition and purification techniques were explored that resemble a direct write atomic layer deposition (ALD) process. First, we explored a laser-assisted electron-beam-induced deposition (LAEBID) process augmented with reactive gas that resulted in a 75% carbon reduction compared to standard EBID. Lastly, a sequential deposition plus purification process was also developed and resulted in deposition of pure platinum deposits with high fidelity and shape retention.« less

  20. Process for electrolytic deposition of metals on zirconium materials

    DOE Patents [OSTI]

    Donaghy, Robert E.

    1979-01-30

    A process for the electrolytic deposition of a metal layer on an article comprised of zirconium or a zirconium alloy is disclosed. The article is activated in an aged aqueous solution comprising from about 10 to about 20 grams per liter ammonium bifluoride and from about 0.75 to about 2 grams per liter of sulfuric acid. The solution is aged by immersion of pickled zirconium in the solution for at least about 10 minutes. The loosely adhering film formed on the article in the activating step is removed and the article is contacted with an electrolytic plating solution containing the metal to be deposited on the article in the presence of an electrode receiving current.

  1. Process for electroless deposition of metals on zirconium materials

    DOE Patents [OSTI]

    Donaghy, Robert E.

    1978-01-01

    A process for the electroless deposition of a metal layer on an article comprised of zirconium or a zirconium alloy is disclosed. The article is activated in an aged aqueous solution comprising from about 10 to about 20 grams per liter ammonium bifluoride and from about 0.75 to about 2 grams per liter of sulfuric acid. The solution is aged by immersion of pickled zirconium in the solution for at least about 10 minutes. The loosely adhering film formed on the article in the activating step is removed and the article is contacted with an electroless plating solution containing the metal to be deposited on the article upon sufficient contact with the article.

  2. PROCESS FOR THE RECOVERY AND PURIFICATION OF URANIUM DEPOSITS

    DOE Patents [OSTI]

    Carter, J.M.; Kamen, M.D.

    1958-10-14

    A process is presented for recovering uranium values from UCl/sub 4/ deposits formed on calutrons. Such deposits are removed from the calutron parts by an aqueous wash solution which then contains the uranium values in addition to the following impurities: Ni, Cu, Fe, and Cr. This impurity bearing wash solution is treated with an oxidizing agent, and the oxidized solution is then treated with ammonia in order to precipitate the uranium as ammonium diuranate. The metal impurities of iron and chromium, which form insoluble hydroxides, are precipitated along with the uranium values. The precipitate is separated from the solution, dissolved in acid, and the solution again treated with ammonia and ammonium carbonate, which results in the precipitation of the metal impurities as hydroxides while the uranium values remain in solution.

  3. Apparatus and process for deposition of hard carbon films

    DOE Patents [OSTI]

    Nyaiesh, Ali R.; Garwin, Edward L.

    1989-01-01

    A process and an apparatus for depositing thin, amorphous carbon films having extreme hardness on a substrate is described. An enclosed chamber maintained at less than atmospheric pressure houses the substrate and plasma producing elements. A first electrode is comprised of a cavity enclosed within an RF coil which excites the plasma. A substrate located on a second electrode is excited by radio frequency power applied to the substrate. A magnetic field confines the plasma produced by the first electrode to the area away from the walls of the chamber and focuses the plasma onto the substrate thereby yielding film deposits having higher purity and having more rapid buildup than other methods of the prior art.

  4. Freeze drying for gas chromatography stationary phase deposition

    DOE Patents [OSTI]

    Sylwester, Alan P.

    2007-01-02

    The present disclosure relates to methods for deposition of gas chromatography (GC) stationary phases into chromatography columns, for example gas chromatography columns. A chromatographic medium is dissolved or suspended in a solvent to form a composition. The composition may be inserted into a chromatographic column. Alternatively, portions of the chromatographic column may be exposed or filled with the composition. The composition is permitted to solidify, and at least a portion of the solvent is removed by vacuum sublimation.

  5. Selective deposition of nanostructured ruthenium oxide using Tobacco mosaic

    Office of Scientific and Technical Information (OSTI)

    virus for micro-supercapacitors in solid Nafion electrolyte (Journal Article) | SciTech Connect Title: Selective deposition of nanostructured ruthenium oxide using Tobacco mosaic virus for micro-supercapacitors in solid Nafion electrolyte Authors: Gnerlich, Markus ; Ben-Yoav, Hadar ; Culver, James ; Ketchum, D ; Ghodssi, Reza Publication Date: 2015-10-01 OSTI Identifier: 1210848 DOE Contract Number: SC0001160 Resource Type: Journal Article Resource Relation: Journal Name: Journal of Power

  6. Selective deposition of nanostructured ruthenium oxide using Tobacco mosaic

    Office of Scientific and Technical Information (OSTI)

    virus for micro-supercapacitors in solid Nafion electrolyte (Journal Article) | SciTech Connect This content will become publicly available on June 5, 2017 Title: Selective deposition of nanostructured ruthenium oxide using Tobacco mosaic virus for micro-supercapacitors in solid Nafion electrolyte Authors: Gnerlich, Markus Search SciTech Connect for author "Gnerlich, Markus" Search SciTech Connect for ORCID "0000000163589906" Search orcid.org for ORCID

  7. Substrates suitable for deposition of superconducting thin films

    DOE Patents [OSTI]

    Feenstra, Roeland; Boatner, Lynn A.

    1993-01-01

    A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

  8. Molten carbonate fuel cell reduction of nickel deposits

    DOE Patents [OSTI]

    Smith, James L. (Lemont, IL); Zwick, Stanley A. (Darien, IL)

    1987-01-01

    A molten carbonate fuel cell with anode and cathode electrodes and an eleolyte formed with two tile sections, one of the tile sections being adjacent the anode and limiting leakage of fuel gas into the electrolyte with the second tile section being adjacent the cathode and having pores sized to permit the presence of oxygen gas in the electrolyte thereby limiting the formation of metal deposits caused by the reduction of metal compositions migrating into the electrolyte from the cathode.

  9. Methodology for Improved Adhesion for Deposited Fluorinated Transparent

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Conducting Oxide Films on a Substrate - Energy Innovation Portal Advanced Materials Advanced Materials Find More Like This Return to Search Methodology for Improved Adhesion for Deposited Fluorinated Transparent Conducting Oxide Films on a Substrate National Renewable Energy Laboratory Contact NREL About This Technology Technology Marketing Summary Transparent conducting films (TCF) are typically used in various photovoltaic and display devices. Inorganic films typically consist of

  10. MODELING TRITIUM TRANSPORT, DEPOSITION AND RE-EMISSION

    SciTech Connect (OSTI)

    Viner, B.

    2012-04-03

    The atmospheric release of tritium oxide (HTO) potentially impacts human health, typically through inhalation or absorption. Due to HTO's similarity to water, vegetation will absorb HTO by solution in the leaf water and then re-emit it, creating a number of secondary sources of HTO. Currently, models used for emergency response at Savannah River Site incorporate the transport and deposition of HTO but do not provide estimates for its potential re-emission from vegetation or soil surface though re-emission could result in prolonged exposure and greater than predicted dose for an individual downwind. A simple model of HTO transport, deposition and re-emission has been developed to examine the potential increase in exposure and dose. The model simulates an initial release of HTO that moves with a mean wind and expands through diffusion as a Gaussian puff. Deposition is modeled using previous estimates of deposition velocity for HTO and re-emission is modeled using a time constant that describes how quickly HTO is transferred between the surface and atmosphere. Additional puffs are created to simulate re-emission of HTO as well as horizontal diffusion across model grid cells. An evaluation of field data indicates that the use of a re-emission module tends to improve model predictions through improved prediction of peak concentration magnitude and location. When considering dose, nearly all of the released material is included in the dose calculation when re-emission is included. Although exposure to HTO through re-emission occurs over a few hours, the incremental increase in dose is relatively small because the atmospheric concentration of re-emitted HTO is much lower than the initial release.

  11. Understanding the Initial Stages of Reversible Mg Deposition and Stripping

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Inorganic Nonaqueous Electrolytes - Joint Center for Energy Storage Research April 8, 2015, Research Highlights Understanding the Initial Stages of Reversible Mg Deposition and Stripping in Inorganic Nonaqueous Electrolytes MgCl+ Desolvation Diagram Scientific Achievement The chemical species at the Mg-anode surface in the presence of Magnesium Aluminum-Chloro complex (MACC) electrolyte were identified. While solvent molecules (THF and DME) are loosely bound at the Mg(0001) surface, the

  12. Mechanisms controlling soil carbon sequestration under atmospheric nitrogen deposition

    SciTech Connect (OSTI)

    R.L. Sinsabaugh; D.R. Zak; D.L. Moorhead

    2008-02-19

    Increased atmospheric nitrogen (N) deposition can alter the processing and storage of organic carbon in soils. In 2000, we began studying the effects of simulated atmospheric N deposition on soil carbon dynamics in three types of northern temperate forest that occur across a wide geographic range in the Upper Great Lakes region. These ecosystems range from 100% oak in the overstory (black oak-white oak ecosystem; BOWO) to 0% overstory oak (sugar maple-basswood; SMBW) and include the sugar maple-red oak ecosystem (SMRO) that has intermediate oak abundance. The leaf litter biochemistry of these ecosystems range from highly lignified litter (BOWO) to litter of low lignin content (SMBW). We selected three replicate stands of each ecosystem type and established three plots in each stand. Each plot was randomly assigned one of three levels of N deposition (0, 30 & 80 kg N ha-1 y-1) imposed by adding NaNO3 in six equal increments applied over the growing season. Through experiments ranging from the molecular to the ecosystem scales, we produced a conceptual framework that describes the biogeochemistry of soil carbon storage in N-saturated ecosystems as the product of interactions between the composition of plant litter, the composition of the soil microbial community and the expression of extracellular enzyme activities. A key finding is that atmospheric N deposition can increase or decrease the soil C storage by modifying the expression of extracellular enzymes by soil microbial communities. The critical interactions within this conceptual framework have been incorporated into a new class of simulations called guild decomposition models.

  13. CFD Analysis of Particle Deposition During DPF Filtration Processes |

    Broader source: Energy.gov (indexed) [DOE]

    This file contains a sample pledge form and instructions for completing a paper donation through the CFC. PDF icon CFCNCA Fall 2012 Sample Pledge Form.pdf More Documents & Publications CFCNCA Sample Pledge Form 2012 CFCNCA Catalog of Caring DOE F 3630.1 Rights and Benefits of Reservists Called to Active Duty Department of Energy

    3-D DPF model is developed to predict thermo-physical properties during filtration processes and to quantitatively investigate particle deposition regarding

  14. Rhodium coated mirrors deposited by magnetron sputtering for fusion applications

    SciTech Connect (OSTI)

    Marot, L.; De Temmerman, G.; Oelhafen, P.; Covarel, G.; Litnovsky, A.

    2007-10-15

    Metallic mirrors will be essential components of all optical spectroscopy and imaging systems for ITER plasma diagnostics. Any change in the mirror performance, in particular, its reflectivity, due to erosion of the surface by charge exchange neutrals or deposition of impurities will influence the quality and reliability of the detected signals. Due to its high reflectivity in the visible wavelength range and its low sputtering yield, rhodium appears as an attractive material for first mirrors in ITER. However, the very high price of the raw material calls for using it in the form of a film deposited onto metallic substrates. The development of a reliable technique for the preparation of high reflectivity rhodium films is therefore of the highest importance. Rhodium layers with thicknesses of up to 2 {mu}m were produced on different substrates of interest (Mo, stainless steel, Cu) by magnetron sputtering. Produced films exhibit a low roughness and crystallite size of about 10 nm with a dense columnar structure. No impurities were detected on the surface after deposition. Scratch tests demonstrate that adhesion properties increase with substrate hardness. Detailed optical characterizations of Rh-coated mirrors as well as results of erosion tests performed both under laboratory conditions and in the TEXTOR tokamak are presented in this paper.

  15. Apparatus for depositing a low work function material

    DOE Patents [OSTI]

    Balooch, Mehdi; Dinh, Long N.; Siekhaus, Wigbert J.

    2006-10-10

    Short-wavelength photons are used to ablate material from a low work function target onto a suitable substrate. The short-wavelength photons are at or below visible wavelength. The elemental composition of the deposit is controlled by the composition of the target and the gaseous environment in which the ablation process is performed. The process is carried out in a deposition chamber to which a short-wavelength laser is mounted and which includes a substrate holder which can be rotated, tilted, heated, or cooled. The target material is mounted onto a holder that spins the target during laser ablation. In addition, the deposition chamber is provided with a vacuum pump, an external gas supply with atomizer and radical generator, a gas generator for producing a flow of molecules on the substrate, and a substrate cleaning device, such as an ion gun. The substrate can be rotated and tilted, for example, whereby only the tip of an emitter can be coated with a low work function material.

  16. Supercritical fluid molecular spray film deposition and powder formation

    DOE Patents [OSTI]

    Smith, Richard D.

    1986-01-01

    Solid films are deposited, or fine powders formed, by dissolving a solid material into a supercritical fluid solution at an elevated pressure and then rapidly expanding the solution through a short orifice into a region of relatively low pressure. This produces a molecular spray which is directed against a substrate to deposit a solid thin film thereon, or discharged into a collection chamber to collect a fine powder. Upon expansion and supersonic interaction with background gases in the low pressure region, any clusters of solvent are broken up and the solvent is vaporized and pumped away. Solute concentration in the solution is varied primarily by varying solution pressure to determine, together with flow rate, the rate of deposition and to control in part whether a film or powder is produced and the granularity of each. Solvent clustering and solute nucleation are controlled by manipulating the rate of expansion of the solution and the pressure of the lower pressure region. Solution and low pressure region temperatures are also controlled.

  17. Microenergetic shock initiation studies on deposited films of PETN.

    SciTech Connect (OSTI)

    Long, Gregory T.; Knepper, Robert; Jones, David Alexander; Brundage, Aaron L.; Trott, Wayne Merle; Wixom, Ryan R.; Tappan, Alexander Smith

    2009-07-01

    Films of the high explosive PETN (pentaerythritol tetranitrate) up to 500-{micro}m thick have been deposited through physical vapor deposition, with the intent of creating well-defined samples for shock-initiation studies. PETN films were characterized with surface profilometry, scanning electron microscopy, x-ray diffraction, and focused ion beam nanotomography. These high-density films were subjected to strong shocks in both the in-plane and out-of-plane orientations. Initiation behavior was monitored with high-speed framing and streak camera photography. Direct initiation with a donor explosive (either RDX with binder, or CL-20 with binder) was possible in both orientations, but with the addition of a thin aluminum buffer plate (in-plane configuration only), initiation proved to be difficult due to the attenuated shock and the high density of the PETN films. Mesoscale models of microenergetic samples were created using the shock physics code CTH and compared with experimental results. The results of these experiments will be discussed in the context of small sample geometry, deposited film morphology, and density.

  18. Continuous production of nanostructured particles using spatial atomic layer deposition

    SciTech Connect (OSTI)

    Ommen, J. Ruud van Kooijman, Dirkjan; Niet, Mark de; Talebi, Mojgan; Goulas, Aristeidis

    2015-03-15

    In this paper, the authors demonstrate a novel spatial atomic layer deposition (ALD) process based on pneumatic transport of nanoparticle agglomerates. Nanoclusters of platinum (Pt) of ?1?nm diameter are deposited onto titania (TiO{sub 2}) P25 nanoparticles resulting to a continuous production of an active photocatalyst (0.120.31?wt. % of Pt) at a rate of about 1?g min{sup ?1}. Tuning the precursor injection velocity (1040?m s{sup ?1}) enhances the contact between the precursor and the pneumatically transported support flows. Decreasing the chemisorption temperature (from 250 to 100?C) results in more uniform distribution of the Pt nanoclusters as it decreases the reaction rate as compared to the rate of diffusion into the nanoparticle agglomerates. Utilizing this photocatalyst in the oxidation reaction of Acid Blue 9 showed a factor of five increase of the photocatalytic activity compared to the native P25 nanoparticles. The use of spatial particle ALD can be further expanded to deposition of nanoclusters on porous, micron-sized particles and to the production of coreshell nanoparticles enabling the robust and scalable manufacturing of nanostructured powders for catalysis and other applications.

  19. Vacuum deposited polymer films: Past, present, and future applications

    SciTech Connect (OSTI)

    Affinito, J.; Martin, P.; Gross, M.; Bennett, W.

    1994-11-01

    Two extremely high rate processes have been developed for the vacuum deposition of polymer thin films. Dubbed the PML (for Polymer Multi-Layer) and LML (for Liquid Multi-Layer) processes, the PML technique was originally developed for the manufacture of polymer/aluminum surface mount capacitors while the LML method arose from a need to fabricate lithium polymer batteries. These processes have since been found to be compatible with most other vacuum deposition techniques in, integrated, in-line coating processes. Battelle has developed an extensive program, and a great deal of hardware, to pursue a wide variety of PML and LML applications which integrate these two process technologies with other, conventional, vacuum deposition methods. The historical development of the technologies is reviewed and the Battelle PML/LML facilities are described. Current Battelle work involving solar thermal control films, PML QWOTs, and polymer/metal high reflectors are also discussed. Battelle PML work that is just starting, involving non-linear optical materials/devices, lithium polymer battery fabrication, electrochromic devices, and polymer/oxide multilayers, is discussed as well.

  20. Method of physical vapor deposition of metal oxides on semiconductors

    DOE Patents [OSTI]

    Norton, David P.

    2001-01-01

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  1. Colloidal spray method for low cost thin coating deposition

    DOE Patents [OSTI]

    Pham, Ai-Quoc; Glass, Robert S.; Lee, Tae H.

    2002-01-01

    A dense or porous coating of material is deposited onto a substrate by forcing a colloidal suspension through an ultrasonic nebulizer and spraying a fine mist of particles in a carrier medium onto a sufficiently heated substrate. The spraying rate is essentially matched to the evaporation rate of the carrier liquid from the substrate to produce a coating that is uniformly distributed over the surface of the substrate. Following deposition to a sufficient coating thickness, a single sintering step may be used to produce a dense ceramic coating. Using this method, coatings ranging in thickness from about one to several hundred microns can be obtained. By using a plurality of compounds in the colloidal suspension, coatings of mixed composition can be obtained. By using a plurality of solutions and separate pumps and a single or multiple ultrasonic nebulizer(s), and varying the individual pumping rates and/or the concentrations of the solutions, a coating of mixed and discontinuously graded (e.g., stepped) or continuously graded layers may be obtained. This method is particularly useful for depositing ceramic coatings. Dense ceramic coating materials on porous substrates are useful in providing improved electrode performance in devices such as high power density solid oxide fuel cells. Dense ceramic coatings obtained by the invention are also useful for gas turbine blade coatings, sensors, steam electrolyzers, etc. The invention has general use in preparation of systems requiring durable and chemically resistant coatings, or coatings having other specific chemical or physical properties.

  2. Colloidal spray method for low cost thin coating deposition

    DOE Patents [OSTI]

    Pham, Ai-Quoc; Glass, Robert S.; Lee, Tae H.

    2005-01-25

    A dense or porous coating of material is deposited onto a substrate by forcing a colloidal suspension through an ultrasonic nebulizer and spraying a fine mist of particles in a carrier medium onto a sufficiently heated substrate. The spraying rate is essentially matched to the evaporation rate of the carrier liquid from the substrate to produce a coating that is uniformly distributed over the surface of the substrate. Following deposition to a sufficient coating thickness, a single sintering step may be used to produce a dense ceramic coating. Using this method, coatings ranging in thickness from about one to several hundred microns can be obtained. By using a plurality of compounds in the colloidal suspension, coatings of mixed composition can be obtained. By using a plurality of solutions and separate pumps and a single or multiple ultrasonic nebulizer(s), and varying the individual pumping rates and/or the concentrations of the solutions, a coating of mixed and discontinuously graded (e.g., stepped) or continuously graded layers may be obtained. This method is particularly useful for depositing ceramic coatings. Dense ceramic coating materials on porous substrates are useful in providing improved electrode performance in devices such as high power density solid oxide fuel cells. Dense ceramic coatings obtained by the invention are also useful for gas turbine blade coatings, sensors, steam electrolyzers, etc. The invention has general use in preparation of systems requiring durable and chemically resistant coatings, or coatings having other specific chemical or physical properties.

  3. Nitrogen Deposition to and Cycling in a Deciduous Forest

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Pryor, Sara C.; Barthelmie, Rebecca J.; Carreiro, Margaret; Davis, Melissa L.; Hartley, Anne; Jensen, Bjame; Oliphant, Andrew; Randolph, Melissa J. C.; Schoof, Justin T.

    2001-01-01

    The project described here seeks to answer questions regarding the role increased nitrogen (N) deposition is playing in enhanced carbon (C) sequestration in temperate mid-latitude forests, using detailed measurements from an AmeriFlux tower in southern Indiana (Morgan-Monroe State Forest, or MMSF). The measurements indicate an average atmosphere-surface N flux of approximately 6 mg-N m -2 day -1 during the 2000 growing season, with approximately 40% coming from dry deposition of ammonia (NH 3 ), nitric acid (HNO 3 ), and particle-bound N. Wet deposition and throughfall measurements indicate significant canopy uptake of N (particularly NH 4 +) at themore » site, leading to a net canopy exchange (NCE) of –6 kg-N ha -1 for the growing season. These data are used in combination with data on the aboveground C:N ratio, litterfall flux, and soil net N mineralization rates to indicate the level of potential perturbation of C sequestration at this site.« less

  4. Quantitative study on the chemical solution deposition of zinc oxysulfide

    SciTech Connect (OSTI)

    Reinisch, Michael; Perkins, Craig L.; Steirer, K. Xerxes

    2015-11-21

    Zinc Oxysulfide (ZnOS) has demonstrated potential in the last decade to replace CdS as a buffer layer material since it is a wide-band-gap semiconductor with performance advantages over CdS (Eg = 2.4 eV) in the near UV-range for solar energy conversion. However, questions remain on the growth mechanisms of chemical bath deposited ZnOS. In this study, a detailed model is employed to calculate solubility diagrams that describe simple conditions for complex speciation control using only ammonium hydroxide without additional base. For these conditions, ZnOS is deposited via aqueous solution deposition on a quartz crystal microbalance in a continuous flow cell. Data is used to analyze the growth rate dependence on temperature and also to elucidate the effects of dimethylsulfoxide (DMSO) when used as a co-solvent. Activation energies (EA) of ZnOS are calculated for different flow rates and solution compositions. As a result, the measured EA relationships are affected by changes in the primary growth mechanism when DMSO is included.

  5. Studies on atomic layer deposition of IRMOF-8 thin films

    SciTech Connect (OSTI)

    Salmi, Leo D. Heikkil, Mikko J.; Vehkamki, Marko; Puukilainen, Esa; Ritala, Mikko; Sajavaara, Timo

    2015-01-15

    Deposition of IRMOF-8 thin films by atomic layer deposition was studied at 260320?C. Zinc acetate and 2,6-naphthalenedicarboxylic acid were used as the precursors. The as-deposited amorphous films were crystallized in 70% relative humidity at room temperature resulting in an unknown phase with a large unit cell. An autoclave with dimethylformamide as the solvent was used to recrystallize the films into IRMOF-8 as confirmed by grazing incidence x-ray diffraction. The films were further characterized by high temperature x-ray diffraction (HTXRD), field emission scanning electron microscopy, Fourier transform infrared spectroscopy (FTIR), time-of-flight elastic recoil detection analysis (TOF-ERDA), nanoindentation, and energy-dispersive x-ray spectroscopy. HTXRD measurements revealed similar behavior to bulk IRMOF-8. According to TOF-ERDA and FTIR, composition of the films was similar to IRMOF-8. Through-porosity was confirmed by loading the films with palladium using Pd(thd){sub 2} (thd?=?2,2,6,6-tetramethyl-3,5-heptanedionato) as the precursor.

  6. Method for materials deposition by ablation transfer processing

    DOE Patents [OSTI]

    Weiner, K.H.

    1996-04-16

    A method in which a thin layer of semiconducting, insulating, or metallic material is transferred by ablation from a source substrate, coated uniformly with a thin layer of said material, to a target substrate, where said material is desired, with a pulsed, high intensity, patternable beam of energy. The use of a patternable beam allows area-selective ablation from the source substrate resulting in additive deposition of the material onto the target substrate which may require a very low percentage of the area to be covered. Since material is placed only where it is required, material waste can be minimized by reusing the source substrate for depositions on multiple target substrates. Due to the use of a pulsed, high intensity energy source the target substrate remains at low temperature during the process, and thus low-temperature, low cost transparent glass or plastic can be used as the target substrate. The method can be carried out atmospheric pressures and at room temperatures, thus eliminating vacuum systems normally required in materials deposition processes. This invention has particular application in the flat panel display industry, as well as minimizing materials waste and associated costs. 1 fig.

  7. Method for materials deposition by ablation transfer processing

    DOE Patents [OSTI]

    Weiner, Kurt H.

    1996-01-01

    A method in which a thin layer of semiconducting, insulating, or metallic material is transferred by ablation from a source substrate, coated uniformly with a thin layer of said material, to a target substrate, where said material is desired, with a pulsed, high intensity, patternable beam of energy. The use of a patternable beam allows area-selective ablation from the source substrate resulting in additive deposition of the material onto the target substrate which may require a very low percentage of the area to be covered. Since material is placed only where it is required, material waste can be minimized by reusing the source substrate for depositions on multiple target substrates. Due to the use of a pulsed, high intensity energy source the target substrate remains at low temperature during the process, and thus low-temperature, low cost transparent glass or plastic can be used as the target substrate. The method can be carried out atmospheric pressures and at room temperatures, thus eliminating vacuum systems normally required in materials deposition processes. This invention has particular application in the flat panel display industry, as well as minimizing materials waste and associated costs.

  8. Quantitative study on the chemical solution deposition of zinc oxysulfide

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Reinisch, Michael; Perkins, Craig L.; Steirer, K. Xerxes

    2015-11-21

    Zinc Oxysulfide (ZnOS) has demonstrated potential in the last decade to replace CdS as a buffer layer material since it is a wide-band-gap semiconductor with performance advantages over CdS (Eg = 2.4 eV) in the near UV-range for solar energy conversion. However, questions remain on the growth mechanisms of chemical bath deposited ZnOS. In this study, a detailed model is employed to calculate solubility diagrams that describe simple conditions for complex speciation control using only ammonium hydroxide without additional base. For these conditions, ZnOS is deposited via aqueous solution deposition on a quartz crystal microbalance in a continuous flow cell.more » Data is used to analyze the growth rate dependence on temperature and also to elucidate the effects of dimethylsulfoxide (DMSO) when used as a co-solvent. Activation energies (EA) of ZnOS are calculated for different flow rates and solution compositions. As a result, the measured EA relationships are affected by changes in the primary growth mechanism when DMSO is included.« less

  9. Inkjet Deposition of Layer-by-Layer Assembled Films

    SciTech Connect (OSTI)

    Andres, C. M.; Kotov, Nicholas A.

    2010-09-23

    Layer-by-layer assembly (LBL) can create advanced composites with exceptional properties unavailable by other means, but the laborious deposition process and multiple dipping cycles hamper their utilization in microtechnologies and electronics. Multiple rinse steps provide both structural control and thermodynamic stability to LBL multilayers, but they significantly limit their practical applications and contribute significantly to the processing time and waste. Here we demonstrate that by employing inkjet technology one can deliver the necessary quantities of LBL components required for film buildup without excess, eliminating the need for repetitive rinsing steps. This feature differentiates this approach from all other recognized LBL modalities. Using a model system of negatively charged gold nanoparticles and positively charged poly(diallyldimethylammonium) chloride, the material stability, nanoscale control over thickness, and particle coverage offered by the inkjet LBL technique are shown to be equal or better than the case of multilayers made with traditional dipping cycles. The opportunity for fast deposition of complex metallic patterns using a simple inkjet printer is also shown. The additive nature of LBL deposition based on the formation of insoluble nanoparticle-polyelectrolyte complexes of various compositions provides an excellent opportunity for versatile, multicomponent, and noncontact patterning for the simple production of stratified patterns that are much needed in advanced devices.

  10. Droplet sizes, dynamics and deposition in vertical annular flow

    SciTech Connect (OSTI)

    Lopes, J C.B.; Dukler, A E

    1985-10-01

    The role of droplets in vertical upwards annular flow is investigated, focusing on the droplet size distributions, dynamics, and deposition phenomena. An experimental program was performed based on a new laser optical technique developed in these laboratories and implemented here for annular flow. This permitted the simultaneous measurement of droplet size, axial and radial velocity. The dependence of droplet size distributions on flow conditions is analyzed. The Upper-Log Normal function proves to be a good model for the size distribution. The mechanism controlling the maximum stable drop size was found to result from the interaction of the pressure fluctuations of the turbulent flow of the gas core with the droplet. The average axial droplet velocity showed a weak dependence on gas rates. This can be explained once the droplet size distribution and droplet size-velocity relationship are analyzed simultaneously. The surprising result from the droplet conditional analysis is that larger droplet travel faster than smaller ones. This dependence cannot be explained if the drag curves used do not take into account the high levels of turbulence present in the gas core in annular flow. If these are considered, then interesting new situations of multiplicity and stability of droplet terminal velocities are encountered. Also, the observed size-velocity relationship can be explained. A droplet deposition is formulated based on the particle inertia control. This permitted the calculation of rates of drop deposition directly from the droplet size and velocities data.

  11. Dendrite-free Li deposition using trace-amounts of water as an...

    Office of Scientific and Technical Information (OSTI)

    Dendrite-free Li deposition using trace-amounts of water as an electrolyte additive ... Title: Dendrite-free Li deposition using trace-amounts of water as an electrolyte additive ...

  12. Sol-gel deposition of buffer layers on biaxially textured metal...

    Office of Scientific and Technical Information (OSTI)

    Sol-gel deposition of buffer layers on biaxially textured metal substances Citation Details In-Document Search Title: Sol-gel deposition of buffer layers on biaxially textured ...

  13. Microreactor-Assisted Nanomaterial Deposition for Photovoltaic Thin-Film Production

    SciTech Connect (OSTI)

    2009-03-01

    This factsheet describes a research project whose goal is to develop and demonstrate a scalable microreactor-assisted nanomaterial deposition pilot platform for the production, purification, functionalization, and solution deposition of nanomaterials for PV applications.

  14. Liquid precursor for deposition of copper selenide and method of preparing the same

    DOE Patents [OSTI]

    Curtis, Calvin J.; Miedaner, Alexander; Franciscus Antonius Maria Van Hest, Marinus; Ginley, David S.; Hersh, Peter A.; Eldada, Louay; Stanbery, Billy J.

    2015-09-08

    Liquid precursors containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and methods of depositing a precursor on a substrate are also disclosed.

  15. Alkali-metal/alkaline-earth-metal fluorine beryllium borate NaSr{sub 3}Be{sub 3}B{sub 3}O{sub 9}F{sub 4} with large nonlinear optical properties in the deep-ultraviolet region

    SciTech Connect (OSTI)

    Reshak, A. H.; Huang, Hongwei; Kamarudin, H.; Auluck, S.

    2015-02-28

    The linear optical response and second harmonic generation (SHG) in alkali-metal/alkaline-earth-metal fluorine beryllium borate NaSr{sub 3}Be{sub 3}B{sub 3}O{sub 9}F{sub 4} are investigated by means of density functional theory. Calculations are performed using four types of exchange correlations: Ceperley-Alder local density approximation, Perdew Burke and Ernzerhof general gradient approximation, Engel-Vosko generalized gradient approximation, and the recently modified Becke-Johnson potential (mBJ). The mBJ approach brings the calculated band gap (7.20 eV) in excellent agreement with the experimental one (7.28 eV). The calculated values of the uniaxial anisotropy δε=−0.076 and the birefringence Δn(0)=0.052 indicate considerable anisotropy in the linear optical properties, which makes it favorable for the second harmonic generation. The dominant component of the second harmonic generation is χ{sub 111}{sup (2)}(ω). The value of |χ{sub 111}{sup (2)}(ω)| is about 1.2 pm/V at λ = 1064 nm in agreement with previous calculations. To analyze the origin of the high SHG of NaSr{sub 3}Be{sub 3}B{sub 3}O{sub 9}F{sub 4} single crystals, we have correlated the features of |χ{sub 111}{sup (2)}(ω)| spectra with the features of ε{sub 2}(ω) spectra as a function of ω/2 and ω. From the calculated dominant component |χ{sub 111}{sup (2)}(ω)|, we find that the microscopic first hyperpolarizability, β{sub 111}, the vector components along the dipole moment direction is 0.5 × 10{sup −30} esu at static limit and 0.6 × 10{sup −30} esu at λ = 1064 nm.

  16. Property transformation of graphene with Al{sub 2}O{sub 3} films deposited directly by atomic layer deposition

    SciTech Connect (OSTI)

    Zheng, Li; Cao, Duo; Wang, Zhongjian; Xia, Chao [State Key Laboratory of Functional Materials for Informatics, SIMIT, Chinese Academy of Sciences, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Cheng, Xinhong, E-mail: xh-cheng@mail.sim.ac.cn; Yu, Yuehui [State Key Laboratory of Functional Materials for Informatics, SIMIT, Chinese Academy of Sciences, Shanghai 200050 (China); Shen, Dashen [University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States)

    2014-01-13

    Al{sub 2}O{sub 3} films are deposited directly onto graphene by H{sub 2}O-based atomic layer deposition (ALD), and the films are pinhole-free and continuously cover the graphene surface. The growth process of Al{sub 2}O{sub 3} films does not introduce any detective defects in graphene, suppresses the hysteresis effect and tunes the graphene doping to n-type. The self-cleaning of ALD growth process, together with the physically absorbed H{sub 2}O and oxygen-deficient ALD environment consumes OH{sup ?} bonds, suppresses the p-doping of graphene, shifts Dirac point to negative gate bias and enhances the electron mobility.

  17. Maskless deposition technique for the physical vapor deposition of thin film and multilayer coatings with subnanometer precision and accuracy

    DOE Patents [OSTI]

    Vernon, Stephen P.; Ceglio, Natale M.

    2000-01-01

    The invention is a method for the production of axially symmetric, graded and ungraded thickness thin film and multilayer coatings that avoids the use of apertures or masks to tailor the deposition profile. A motional averaging scheme permits the deposition of uniform thickness coatings independent of the substrate radius. Coating uniformity results from an exact cancellation of substrate radius dependent terms, which occurs when the substrate moves at constant velocity. If the substrate is allowed to accelerate over the source, arbitrary coating profiles can be generated through appropriate selection and control of the substrate center of mass equation of motion. The radial symmetry of the coating profile is an artifact produced by orbiting the substrate about its center of mass; other distributions are obtained by selecting another rotation axis. Consequently there is a direct mapping between the coating thickness and substrate equation of motion which can be used to tailor the coating profile without the use of masks and apertures.

  18. Deposition of sodium sulfate from salt-seeded combustion gases of a high velocity burner rig

    SciTech Connect (OSTI)

    Santoro, G.J.; Goekoglu, S.A.; Kohl, F.J.; Stearns, C.A.; Rusner, D.E.

    1984-09-01

    This paper addresses the corrosion which is caused on vanes and blades by combustion products in the hot section of turbine engines. Such deposits cause an accelerated metal wastage called hot corrosion. The mechanism of sodium sulfate deposition was studied under controlled lab conditions. Deposition rates and dew point temperatures were determined. These tests, along with thermodynamic and transport calculations, were used in the interpretation of the deposition results.

  19. Hot-filament chemical vapor deposition chamber and process with multiple gas inlets

    DOE Patents [OSTI]

    Deng, Xunming; Povolny, Henry S.

    2004-06-29

    A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode inside the confinement cup is used to generate plasma for film deposition. The method is used to deposit advanced thin films (such as silicon based thin films) at a high quality and at a high deposition rate.

  20. Passivation layer on polyimide deposited by combined plasma immersion ion implantation and deposition and cathodic vacuum arc technique

    SciTech Connect (OSTI)

    Han, Z. J.; Tay, B. K.; Sze, J. Y.; Ha, P. C. T.

    2007-05-15

    A thin passivation layer of aluminum oxide was deposited on polyimide by using the combined plasma immersion ion implantation and deposition (PIII and D) and cathodic vacuum arc technique. X-ray photoelectron spectroscopy C 1s spectra showed that the carbonyl bond (C=O) and ether group (C-O-C and C-N-C) presented in pristine polyimide were damaged by implantation of aluminum ions and deposition of an aluminum oxide passivation layer. O 1s and Al 2p spectra confirmed the formation of a thin aluminum oxide passivation layer. This passivation layer can be implemented in aerospace engineering where polyimide may suffer degradation from fast atomic oxygen in the low-earth-orbit environment. To test the protection of this passivation layer to energetic oxygen ions, a plasma-enhanced chemical vapor deposition system was used to simulate the oxygen-ion irradiation, and the results showed that a higher weight occurred for passivated samples compared to pristine ones. X-ray diffraction showed that Al peaks were presented on the surface region, but no aluminum oxide peak was detected. The authors then concluded that Al clusters were formed in polyimide besides aluminum oxide, which was in an x-ray amorphous state. Furthermore, contact-angle measurements showed a reduced contact angle for passivated polyimide from a pristine value of 78 deg. to 20 deg. by using deionized water. Several discussions have been made on the surface chemical and structural property changes by using the combined PIII and D and cathodic vacuum arc technique.

  1. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, III, Jerome J. (New Haven, CT); Halpern, Bret L. (Bethany, CT)

    1993-01-01

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

  2. Apparatus and method for selective area deposition of thin films on electrically biased substrates

    DOE Patents [OSTI]

    Zuhr, Raymond A. (Oak Ridge, TN); Haynes, Tony E. (Knoxville, TN); Golanski, Andrzej (Cheylas, FR)

    1994-01-01

    An ion beam deposition process for selective area deposition on a polarized substrate uses a potential applied to the substrate which allows the ionized particles to reach into selected areas for film deposition. Areas of the substrate to be left uncoated are held at a potential that repells the ionized particles.

  3. Apparatus and method for selective area deposition of thin films on electrically biased substrates

    DOE Patents [OSTI]

    Zuhr, R.A.; Haynes, T.E.; Golanski, A.

    1999-06-08

    An ion beam deposition process for selective area deposition on a polarized substrate uses a potential applied to the substrate which allows the ionized particles to reach into selected areas for film deposition. Areas of the substrate to be left uncoated are held at a potential that repels the ionized particles. 3 figs.

  4. Apparatus and method for selective area deposition of thin films on electrically biased substrates

    DOE Patents [OSTI]

    Zuhr, Raymond A. (Oak Ridge, TN); Haynes, Tony E. (Knoxville, TN); Golanski, Andrzej (Le Cheylas, FR)

    1999-01-01

    An ion beam deposition process for selective area deposition on a polarized substrate uses a potential applied to the substrate which allows the ionized particles to reach into selected areas for film deposition. Areas of the substrate to be left uncoated are held at a potential that repells the ionized particles.

  5. Surface smoothing effect of an amorphous thin film deposited by atomic layer deposition on a surface with nano-sized roughness

    SciTech Connect (OSTI)

    Lau, W. S. Wan, X.; Xu, Y.; Wong, H.; Zhang, J.; Luo, J. K.; Institute of Renewable Energy and Environment Technology, Bolton University, Deane Road, Bolton BL3 5 AB

    2014-02-15

    Previously, Lau (one of the authors) pointed out that the deposition of an amorphous thin film by atomic layer deposition (ALD) on a substrate with nano-sized roughness probably has a surface smoothing effect. In this letter, polycrystalline zinc oxide deposited by ALD onto a smooth substrate was used as a substrate with nano-sized roughness. Atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) were used to demonstrate that an amorphous aluminum oxide thin film deposited by ALD can reduce the surface roughness of a polycrystalline zinc oxide coated substrate.

  6. Improved process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition

    DOE Patents [OSTI]

    Lackey, W.J. Jr.; Caputo, A.J.

    1984-09-07

    A specially designed apparatus provides a steep thermal gradient across the thickness of fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

  7. Palladium catalysts synthesized by atomic layer deposition for methanol decomposition.

    SciTech Connect (OSTI)

    Elam, J. W.; Feng, H.; Stair, P. C.; Libera, J. A.; Setthapun, W.; Northwestern Univ.

    2010-05-25

    Atomic layer deposition (ALD) palladium films were deposited at 200 C on various ALD metal oxide surfaces using sequential exposures to Pd(II) hexafluoroacetylacetonate (Pd(hfac)2) and formalin. In situ quartz crystal microbalance measurements as well as ex situ measurements performed on planar substrates revealed that the Pd growth begins with a relatively slow nucleation process and accelerates once an adequate amount of Pd has deposited on the surface. Furthermore, the Pd nucleation is faster on ALD ZnO surfaces compared to ALD Al2O3 surfaces. ALD was utilized to synthesize highly dispersed, uniform Pd nanoparticles (1 to 2 nm in diameter) on ALD ZnO and Al2O3 coated mesoporous silica gel, and the catalytic performances of these samples were compared in the methanol decomposition reaction. The ALD Pd-Al2O3 showed high activity and hydrogen selectivity at relatively low temperatures while the ALD Pd-ZnO showed very low activity as well as quick deactivation. In situ extended X-ray absorption fine structure (EXAFS) measurement revealed that the Pd supported on ZnO 'dissolves' into the substrate during the methanol decomposition reaction which accounts for the gradual disappearance of its catalytic activity. By applying one cycle of ALD Al2O3 on top of the Pd-ZnO catalyst, the activity was enhanced and the catalyst deactivation was mitigated. This Al2O3 overcoating method stabilizes the Pd-ZnO and effectively prevents the dissolution of Pd into the ZnO substrate.

  8. Chemical surface deposition of ultra-thin semiconductors

    DOE Patents [OSTI]

    McCandless, Brian E.; Shafarman, William N.

    2003-03-25

    A chemical surface deposition process for forming an ultra-thin semiconducting film of Group IIB-VIA compounds onto a substrate. This process eliminates particulates formed by homogeneous reactions in bath, dramatically increases the utilization of Group IIB species, and results in the formation of a dense, adherent film for thin film solar cells. The process involves applying a pre-mixed liquid coating composition containing Group IIB and Group VIA ionic species onto a preheated substrate. Heat from the substrate causes a heterogeneous reaction between the Group IIB and VIA ionic species of the liquid coating composition, thus forming a solid reaction product film on the substrate surface.

  9. Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition

    SciTech Connect (OSTI)

    Nam, Youngwoo, E-mail: youngwoo.nam@chalmers.se [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Sun, Jie; Lindvall, Niclas; Yurgens, August [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Jae Yang, Seung; Rae Park, Chong [Department of Materials Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of); Woo Park, Yung [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

    2014-01-13

    We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.

  10. Method of depositing a catalyst on a fuel cell electrode

    DOE Patents [OSTI]

    Dearnaley, Geoffrey; Arps, James H.

    2000-01-01

    Fuel cell electrodes comprising a minimal load of catalyst having maximum catalytic activity and a method of forming such fuel cell electrodes. The method comprises vaporizing a catalyst, preferably platinum, in a vacuum to form a catalyst vapor. A catalytically effective amount of the catalyst vapor is deposited onto a carbon catalyst support on the fuel cell electrode. The electrode preferably is carbon cloth. The method reduces the amount of catalyst needed for a high performance fuel cell electrode to about 0.3 mg/cm.sup.2 or less.

  11. Formation of carbon deposits from coal in an arc plasma

    SciTech Connect (OSTI)

    Wang, B.; Tian, Y.; Zhang, Y.; Zhu, S.; Lu, Y.; Zhang, Y.; Xie, K.

    2007-07-01

    The issue of deposited carbon (DC) on a reactor wall during the production of acetylene by the coal/arc plasma process is a potential obstacle for the industrialization process. The formation mechanism of DC is very difficult to reveal because the high complexity of coal and the volatile matter. Combining with quenching technique, the methane, liquid petroleum gas and benzene were employed as the model materials to roughly act as the light gas, chain and aromatic subcomponents of volatile matter, and then the reasonable formation mechanism of DC was subtly speculated accordingly.

  12. Theoretical study of energy deposition in ionization chambers for tritium measurements

    SciTech Connect (OSTI)

    Chen, Zhilin; Peng, Shuming; Meng, Dan; He, Yuehong; Wang, Heyi

    2013-10-15

    Energy deposition in ionization chambers has been theoretically studied for tritium measurements in gaseous form. A one-dimension model is introduced to establish the quantitative relationship between energy deposition rate and many factors, including carrier gas, gas pressure, wall material, chamber size, and gas temperature. Energy deposition rate has been calculated at pressure varying from 5 kPa to 500 kPa based on some approximations. It is found that energy deposition rate varies greatly for different parameters, especially at low gas pressure. For the same chamber, energy deposition rate in argon is much higher than in deuterium, as much as 70.7% higher at 5 kPa. Gold plated chamber gives highest energy deposition rate in the calculations while aluminum chamber results in the lowest. As chamber size gets smaller, β ray emitted by tritium will deposit less energy in the sensitive region of the chamber. For chambers flowing through with the same gas, energy deposition rate in a 10 L chamber is 23.9% higher than in a 0.05 L chamber at 5 kPa. Gas temperature also places slight influence on energy deposition rate, and 373 K will lead to 6.7% lower deposition rate than 233 K at 5 kPa. In addition, experiments have been performed to obtain energy deposition rate in a gold plated chamber, which show good accordance with theoretical calculations.

  13. Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique

    SciTech Connect (OSTI)

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong

    2011-03-30

    Zinc oxide (ZnO) is a very promising material for emerging large area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 100 nm to 1020 nm were deposited on silicon (Si) substrate. The deposition pressure was varied from 12 mTorr to 25 mTorr. The influences of the film thickness and the deposition pressure on structural properties of the ZnO films were investigated using Mahr surface profilometer and atomic force microscopy (AFM). The experimental results reveal that the film thickness and the deposition pressure play significant role in the structural formation of the deposited ZnO thin films. ZnO films deposited on Si substrates are promising for variety of thin-film sensor applications.

  14. Process for ion-assisted laser deposition of biaxially textured layer on substrate

    DOE Patents [OSTI]

    Russo, Richard E.; Reade, Ronald P.; Garrison, Stephen M.; Berdahl, Paul

    1995-01-01

    A process for depositing a biaxially aligned intermediate layer over a non-single crystal substrate is disclosed which permits the subsequent deposition thereon of a biaxially oriented superconducting film. The process comprises depositing on a substrate by laser ablation a material capable of being biaxially oriented and also capable of inhibiting the migration of substrate materials through the intermediate layer into such a superconducting film, while simultaneously bombarding the substrate with an ion beam. In a preferred embodiment, the deposition is carried out in the same chamber used to subsequently deposit a superconducting film over the intermediate layer. In a further aspect of the invention, the deposition of the superconducting layer over the biaxially oriented intermediate layer is also carried out by laser ablation with optional additional bombardment of the coated substrate with an ion beam during the deposition of the superconducting film.

  15. Process for ion-assisted laser deposition of biaxially textured layer on substrate

    DOE Patents [OSTI]

    Russo, R.E.; Reade, R.P.; Garrison, S.M.; Berdahl, P.

    1995-07-11

    A process for depositing a biaxially aligned intermediate layer over a non-single crystal substrate is disclosed which permits the subsequent deposition thereon of a biaxially oriented superconducting film. The process comprises depositing on a substrate by laser ablation a material capable of being biaxially oriented and also capable of inhibiting the migration of substrate materials through the intermediate layer into such a superconducting film, while simultaneously bombarding the substrate with an ion beam. In a preferred embodiment, the deposition is carried out in the same chamber used to subsequently deposit a superconducting film over the intermediate layer. In a further aspect of the invention, the deposition of the superconducting layer over the biaxially oriented intermediate layer is also carried out by laser ablation with optional additional bombardment of the coated substrate with an ion beam during the deposition of the superconducting film. 8 figs.

  16. Long-term elemental dry deposition fluxes measured around Lake Michigan with an automated dry deposition sampler

    SciTech Connect (OSTI)

    Shahin, U. Yi, S.M.; Paode, R.D.; Holsen, T.M.

    2000-05-15

    Long-term measurements of mass and elemental dry deposition (MG, Al, V, Cr, Mn, Ni, Co, Cu, Zn, As, Sr, Mo, Cd, Sb, Ba, and Pb) were made with an automated dry deposition sampler (Eagle II) containing knife-edge surrogate surfaces during the Lake Michigan Mass Balance/Mass Budget Study. Measurements were made over a roughly 700-day period in Chicago, IL; in South Haven and Sleeping Bear Dunes, MI; and over Lake Michigan on the 68th Street drinking water intake cribs from December 1993 to October 1995. Average mass fluxes in Chicago, South Haven, Sleeping Bear Dunes, and the 68th Street crib were 65, 10, 3.6, and 12 mg m{sup {minus}2} day{sup {minus}1}, respectively. Primarily crustal elemental fluxes were significantly smaller than the mass fluxes but higher than primarily anthropogenic elemental fluxes. For example, the average elemental flux of Al in Chicago, South Haven, Sleeping Bear Dunes, and the 68th Street crib were 1.0, 0.34, 0.074, and 0.34 mg m{sup {minus}2}day{sup {minus}1}, respectively. The average Pb fluxes in Chicago, South Haven, Sleeping Bear Dunes, and the 68th Street crib were 0.038, 0.023, 0.035, and 0.032 mg m{sup {minus}2}day{sup {minus}1}, respectively. The measured fluxes at the various sites were used to calculate the dry deposition loadings to the lake. These estimated fluxes were highest for Mg and lowest for Cd.

  17. Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

    SciTech Connect (OSTI)

    Zhang, Yijun; Liu, Ming E-mail: wren@mail.xjtu.edu.cn Ren, Wei E-mail: wren@mail.xjtu.edu.cn; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang E-mail: wren@mail.xjtu.edu.cn

    2015-05-07

    One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe{sub 3}O{sub 4} thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe{sub 3}O{sub 4} thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H{sub 2}/Ar at 400 °C, the as-grown α−Fe{sub 2}O{sub 3} sample is reduced to Fe{sub 3}O{sub 4} phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications.

  18. Plasma and Ion Assistance in Physical Vapor Deposition: AHistorical Perspective

    SciTech Connect (OSTI)

    Anders, Andre

    2007-02-28

    Deposition of films using plasma or plasma-assist can betraced back surprisingly far, namely to the 18th century for arcs and tothe 19th century for sputtering. However, only since the 1960s thecoatings community considered other processes than evaporation for largescale commercial use. Ion Plating was perhaps the first importantprocess, introducing vapor ionization and substrate bias to generate abeam of ions arriving on the surface of the growing film. Ratherindependently, cathodic arc deposition was established as an energeticcondensation process, first in the former Soviet Union in the 1970s, andin the 1980s in the Western Hemisphere. About a dozen various ion-basedcoating technologies evolved in the last decades, all characterized byspecific plasma or ion generation processes. Gridded and gridless ionsources were taken from space propulsion and applied to thin filmdeposition. Modeling and simulation have helped to make plasma and ionseffects to be reasonably well understood. Yet--due to the complex, oftennon-linear and non-equilibrium nature of plasma and surfaceinteractions--there is still a place for the experience plasma"sourcerer."

  19. Calculations of turbidite deposits and tsunamis from submarine landslides

    SciTech Connect (OSTI)

    Gisler, Galen R; Weaver, Robert P; Gittings, Michael L

    2009-01-01

    Great underwater landslides like Storegga off the Norwegian coast leave massive deposits on the seafloor and must produce enormous tsunamis. Such events have occurred on continental slopes worldwide, and continue to do so. Triggers for such slides include earthquakes, gas hydrate releases, and underwater volcanos. We have petformed a numerical study of such landslides using the multi-material compressible hydrocode Sage in order to understand the relationship between the rheology of the slide material, the configuration of the resulting deposits on the seafloor, and the tsunami that is produced. Instabilities in the fluid-fluid mixing between slide material and seawater produce vortices and swirls with sizes that depend on the rheology of the slide material. These dynamical features of the flow may be preserved as ridges when the sliding material finally stops. Thus studying the configuration of the ridges in prehistoric slides may give us measures of the circumstances under which the slide was initiated. As part of this study, we have also done a convergence test showing that the slide velocity is sensitive to the resolution adopted in the simulation, but that extrapolation to infinite resolution is possible, and can yield good velocities. We will present two-dimensional simulations of schematic underwater slides for our study of rheology, and a three-dimensional simulation in bathymetric conditions that resemble the pre-Storegga Norwegian margin.

  20. Swimming motility reduces Azotobacter vinelandii deposition to silica surfaces

    SciTech Connect (OSTI)

    Lu, Nanxi; Massoudieh, Arash; Liang, Xiaomeng; Hu, Dehong; Kamai, Tamir; Ginn, Timothy R.; Zilles, Julie L.; Nguyen, Thanh H.

    2015-09-16

    The role of swimming motility on bacterial transport and fate in porous media was evaluated. We present microscopic evidence showing that strong swimming motility reduces attachment of Azotobacter vinelandii cells to silica surfaces. Applying global and cluster statistical analyses to microscopic videos taken under non-flow conditions, wild type, flagellated A. vinelandii strain DJ showed strong swimming ability with an average speed of 13.1 ?m/s, DJ77 showed impaired swimming averaged at 8.7 ?m/s, and both the non-flagellated JZ52 and chemically treated DJ cells were non-motile. Quantitative analyses of trajectories observed at different distances above the collector of a radial stagnation point flow cell (RSPF) revealed that both swimming and non-swimming cells moved with the flow when at a distance of at least 20 ?m from the collector surface. Near the surface, DJ cells showed both horizontal and vertical movement diverging them from reaching surfaces, while chemically treated DJ cells moved with the flow to reach surfaces, suggesting that strong swimming reduced attachment. In agreement with the RSPF results, the deposition rates obtained for two-dimensional multiple-collector micromodels were also lowest for DJ, while DJ77 and JZ52 showed similar values. Strong swimming specifically reduced deposition on the upstream surfaces of the micromodel collectors.

  1. Preparation of cuxinygazsen precursor films and powders by electroless deposition

    DOE Patents [OSTI]

    Bhattacharya, Raghu N.; Batchelor, Wendi Kay; Wiesner, Holm; Ramanathan, Kannan; Noufi, Rommel

    1999-01-01

    A method for electroless deposition of Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3) precursor films and powders onto a metallic substrate comprising: preparing an aqueous bath solution of compounds selected from the group consisting of: I) a copper compound, a selenium compound, an indium compound and gallium compound; II) a copper compound, a selenium compound and an indium compound; III) a selenium compound, and indium compound and a gallium compound; IV) a selenium compound and a indium compound; and V) a copper compound and selenium compound; each compound being present in sufficient quantity to react with each other to produce Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3); adjusting the pH of the aqueous bath solution to an acidic value by the addition of a dilute acid; and initiating an electroless reaction with an oxidizing counterelectrode for a sufficient time to cause a deposit of Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3) from the aqueous bath solution onto a metallic substrate.

  2. Transpiring wall supercritical water oxidation reactor salt deposition studies

    SciTech Connect (OSTI)

    Haroldsen, B.L.; Mills, B.E.; Ariizumi, D.Y.; Brown, B.G.

    1996-09-01

    Sandia National Laboratories has teamed with Foster Wheeler Development Corp. and GenCorp, Aerojet to develop and evaluate a new supercritical water oxidation reactor design using a transpiring wall liner. In the design, pure water is injected through small pores in the liner wall to form a protective boundary layer that inhibits salt deposition and corrosion, effects that interfere with system performance. The concept was tested at Sandia on a laboratory-scale transpiring wall reactor that is a 1/4 scale model of a prototype plant being designed for the Army to destroy colored smoke and dye at Pine Bluff Arsenal in Arkansas. During the tests, a single-phase pressurized solution of sodium sulfate (Na{sub 2}SO{sub 4}) was heated to supercritical conditions, causing the salt to precipitate out as a fine solid. On-line diagnostics and post-test observation allowed us to characterize reactor performance at different flow and temperature conditions. Tests with and without the protective boundary layer demonstrated that wall transpiration provides significant protection against salt deposition. Confirmation tests were run with one of the dyes that will be processed in the Pine Bluff facility. The experimental techniques, results, and conclusions are discussed.

  3. Growth and characterization of lithium yttrium borate single crystals

    SciTech Connect (OSTI)

    Singh, A. K.; Singh, S. G.; Tyagi, M.; Desai, D. G.; Sen, Shashwati

    2014-04-24

    Single crystals of 0.1% Ce doped Li{sub 6}Y(BO{sub 3}){sub 3} have been grown using the Czochralski technique. The photoluminescence study of these crystals shows a broad emission at ? 420 nm corresponding to Ce{sub 3+} emission from 5d?4f energy levels. The decay profile of this emission shows a fast response of ? 28 ns which is highly desirable for detector applications.

  4. Development of a silicate-nitrite-borate corrosion inhibitor

    SciTech Connect (OSTI)

    Taylor, P.A.

    1982-11-29

    A corrosion inhibitor consisting of 1000 mg/L nitrite (NO/sub 2//sup -/), 500 mg/L silicate (SiO/sub 2/), 300 mg/L boron as a pH buffer, 50 mg/L of a biocide, and 5 mg/L tolyltriazole in deionized water was developed for use in the machine-cooling water system of the Department of Energy's Gas Centrifuge Enrichment Plant (GCEP) at Portsmouth, Ohio. Corrosion tests in this solution using six different types of metals, including 6061 aluminum, have failed to show any corrosion at the 0.05-..mu../y (0.002-mil/y) detection limit. The use of deionized water for this inhibitor solution is strongly recommended for any system containing aluminum because the presence of 30 mg/L of chloride ions is known to cause pitting in 6061 aluminum. The purity of the corrosion inhibitor can be maintained by using a small mixed-bed demineralizer in the water system. The demineralizer originally loads up with sodium and silicate ions, which then exchange for any contaminating ions-such as calcium, magnesium, or chromate-that might enter the corrosion-inhibitor solution.

  5. Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates with increased stability using the hot wire filament technique

    DOE Patents [OSTI]

    Molenbroek, Edith C.; Mahan, Archie Harvin; Gallagher, Alan C.

    2000-09-26

    A method or producing hydrogenated amorphous silicon on a substrate, comprising the steps of: positioning the substrate in a deposition chamber at a distance of about 0.5 to 3.0 cm from a heatable filament in the deposition chamber; maintaining a pressure in said deposition chamber in the range of about 10 to 100 millitorr and pressure times substrate-filament spacing in the range of about 10 to 100 millitorr-cm, heating the filament to a temperature in the range of about 1,500 to 2,000.degree. C., and heating the substrate to a surface temperature in the range of about 280 to 475.degree. C.; and flowing silicohydride gas into the deposition chamber with said heated filament, decomposing said silicohydride gas into silicon and hydrogen atomic species and allowing products of gas reactions between said atomic species and the silicohydride gas to migrate to and deposit on said substrate while adjusting and maintaining said pressure times substrate-filament spacing in said deposition chamber at a value in said 10 to 100 millitorr range to produce statistically about 3 to 50 atomic collisions between the silicon and hydrogen atomic species migrating to said substrate and undecomposed molecules of the silane or other silicohydride gas in the deposition chamber.

  6. Raman spectra of Cu{sub 2}B{sup II}C{sup IV}X{sub 4}{sup VI} magnetic quaternary semiconductor compounds with tetragonal stannite type structure

    SciTech Connect (OSTI)

    Rincón, C. Quintero, M.; Power, Ch.; Moreno, E.; Quintero, E.; Morocoima, M.; Henao, J. A.; Macías, M. A.

    2015-05-28

    A comparative study of the Raman spectra of Cu{sub 2}B{sup II}C{sup IV}S{sub 4}{sup VI} and Cu{sub 2}B{sup II}C{sup IV}Se{sub 4}{sup VI}(where B = Mn or Fe) magnetic quaternary semiconductor compounds with stannite-type structure (I4{sup ¯}2m) has been done. Most of the fourteen Raman lines expected for these materials were observed in the spectra. The two strongest lines observed have been assigned to the IR inactive A{sub 1}{sup 1} and A{sub 1}{sup 2} stannite modes that originated from the motion of the S or Se anion around the Cu and C{sup IV} cations remaining at rest. The shift in the frequency of these two lines of about 150 cm{sup −1} to lower energies observed in Cu{sub 2}B{sup II}C{sup IV}Se{sub 4}{sup VI} compounds as compared to those in Cu{sub 2}B{sup II}C{sup IV}S{sub 4}{sup VI} ones, can then be explained as due to the anion mass effect. Based on the fact that values of these frequencies depend mainly on anion mass and bond-stretching forces between nearest-neighbor atoms, the vibrational frequencies v{sup ¯}(A{sub 1}{sup 2}) and v{sup ¯}(A{sub 1}{sup 2}) of both modes for several Cu{sub 2}B{sup II}C{sup IV}X{sub 4}{sup VI} stannite compounds (where X = S, Se, or Te) very close to the experimental data reported for these materials were calculated from a simple model that relates these stretching forces to the anion-cation bond-distances.

  7. Electrochemical Deposition of Iron Nanoneedles on Titanium Oxide Nanotubes

    SciTech Connect (OSTI)

    Gan Y. X.; Zhang L.; Gan B.J.

    2011-10-01

    Iron as a catalyst has wide applications for hydrogen generation from ammonia, photodecomposition of organics, and carbon nanotube growth. Tuning the size and shape of iron is meaningful for improving the catalysis efficiency. It is the objective of this work to prepare nanostructured iron with high surface area via electrochemical deposition. Iron nanoneedles were successfully electrodeposited on Ti supported TiO2 nanotube arrays in a chlorine-based electrolyte containing 0.15 M FeCl2 {center_dot} 4H2O and 2.0 M HCl. Transmission electron microscopic analysis reveals that the average length of the nanoneedles is about 200 nm and the thickness is about 10 nm. It has been found that a high overpotential at the cathode made of Ti/TiO2 nanotube arrays is necessary for the formation of the nanoneedles. Cyclic voltammetry test indicates that the electrodeposition of iron nanoneedles is a concentration-limited process.

  8. Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

    DOE Patents [OSTI]

    Miller, Joel S.; Pokhodnya, Kostyantyn I.

    2003-12-09

    A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

  9. Atomic Layer Deposition for the Conformal Coating of Nanoporous Materials

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Elam, Jeffrey W.; Xiong, Guang; Han, Catherine Y.; Wang, H. Hau; Birrell, James P.; Welp, Ulrich; Hryn, John N.; Pellin, Michael J.; Baumann, Theodore F.; Poco, John F.; et al

    2006-01-01

    Amore » tomic layer deposition ( ALD ) is ideal for applying precise and conformal coatings over nanoporous materials. We have recently used ALD to coat two nanoporous solids: anodic aluminum oxide ( AAO ) and silica aerogels. AAO possesses hexagonally ordered pores with diameters d ∼ 40 nm and pore length L ∼ 70 microns. The AAO membranes were coated by ALD to fabricate catalytic membranes that demonstrate remarkable selectivity in the oxidative dehydrogenation of cyclohexane.dditional AAO membranes coated with ALD Pd films show promise as hydrogen sensors. Silica aerogels have the lowest density and highest surface area of any solid material. Consequently, these materials serve as an excellent substrate to fabricate novel catalytic materials and gas sensors by ALD .« less

  10. Electroless deposition process for zirconium and zirconium alloys

    DOE Patents [OSTI]

    Donaghy, Robert E.; Sherman, Anna H.

    1981-01-01

    A method is disclosed for preventing stress corrosion cracking or metal embrittlement of a zirconium or zirconium alloy container that is to be coated on the inside surface with a layer of a metal such as copper, a copper alloy, nickel, or iron and used for holding nuclear fuel material as a nuclear fuel element. The zirconium material is etched in an etchant solution, desmutted mechanically or ultrasonically, oxidized to form an oxide coating on the zirconium, cleaned in an aqueous alkaline cleaning solution, activated for electroless deposition of a metal layer and contacted with an electroless metal plating solution. This method provides a boundary layer of zirconium oxide between the zirconium container and the metal layer.

  11. Electroless deposition process for zirconium and zirconium alloys

    DOE Patents [OSTI]

    Donaghy, R. E.; Sherman, A. H.

    1981-08-18

    A method is disclosed for preventing stress corrosion cracking or metal embrittlement of a zirconium or zirconium alloy container that is to be coated on the inside surface with a layer of a metal such as copper, a copper alloy, nickel, or iron and used for holding nuclear fuel material as a nuclear fuel element. The zirconium material is etched in an etchant solution, desmutted mechanically or ultrasonically, oxidized to form an oxide coating on the zirconium, cleaned in an aqueous alkaline cleaning solution, activated for electroless deposition of a metal layer and contacted with an electroless metal plating solution. This method provides a boundary layer of zirconium oxide between the zirconium container and the metal layer. 1 fig.

  12. Electrocatalysts by atomic layer deposition for fuel cell applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cheng, Niancai; Shao, Yuyan; Liu, Jun; Sun, Xueliang

    2016-01-22

    Here, fuel cells are a promising technology solution for reliable and clean energy because they offer high energy conversion efficiency and low emission of pollutants. However, high cost and insufficient durability are considerable challenges for widespread adoption of polymer electrolyte membrane fuel cells (PEMFCs) in practical applications. Current PEMFCs catalysts have been identified as major contributors to both the high cost and limited durability. Atomic layer deposition (ALD) is emerging as a powerful technique for solving these problems due to its exclusive advantages over other methods. In this review, we summarize recent developments of ALD in PEMFCs with a focusmore » on design of materials for improved catalyst activity and durability. New research directions and future trends have also been discussed.« less

  13. Vacuum deposition and curing of liquid monomers apparatus

    DOE Patents [OSTI]

    Affinito, John D. (Kennewick, WA)

    1996-01-01

    The present invention is the formation of solid polymer layers under vacuum. More specifically, the present invention is the use of "standard" polymer layer-making equipment that is generally used in an atmospheric environment in a vacuum, and degassing the monomer material prior to injection into the vacuum. Additional layers of polymer or metal or oxide may be vacuum deposited onto solid polymer layers. Formation of polymer layers under a vacuum improves material and surface characteristics, and subsequent quality of bonding to additional layers. Further advantages include use of less to no photoinitiator for curing, faster curing, fewer impurities in the polymer electrolyte, as well as improvement in material properties including no trapped gas resulting in greater density, and reduced monomer wetting angle that facilitates spreading of the monomer and provides a smoother finished surface.

  14. Vacuum deposition and curing of liquid monomers apparatus

    DOE Patents [OSTI]

    Affinito, J.D.

    1996-08-20

    The present invention is the formation of solid polymer layers under vacuum. More specifically, the present invention is the use of ``standard`` polymer layer-making equipment that is generally used in an atmospheric environment in a vacuum, and degassing the monomer material prior to injection into the vacuum. Additional layers of polymer or metal or oxide may be vacuum deposited onto solid polymer layers. Formation of polymer layers under a vacuum improves material and surface characteristics, and subsequent quality of bonding to additional layers. Further advantages include use of less to no photoinitiator for curing, faster curing, fewer impurities in the polymer electrolyte, as well as improvement in material properties including no trapped gas resulting in greater density, and reduced monomer wetting angle that facilitates spreading of the monomer and provides a smoother finished surface. 3 figs.

  15. Purification and deposition of silicon by an iodide disproportionation reaction

    DOE Patents [OSTI]

    Wang, Tihu; Ciszek, Theodore F.

    2002-01-01

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  16. Properties of zirconia thin films deposited by laser ablation

    SciTech Connect (OSTI)

    Cancea, V. N.; Filipescu, M.; Colceag, D.; Dinescu, M.; Mustaciosu, C.

    2013-11-13

    Zirconia thin films have been deposited by laser ablation of a ceramic ZrO{sub 2} target in vacuum or in oxygen background at 0.01 mbar. The laser beam generated by an ArF laser (λ=193 nm, ν=40 Hz) has been focalized on the target through a spherical lens at an incident angle of 45°. The laser fluence has been established to a value from 2.0 to 3.4 Jcm{sup −2}. A silicon (100) substrate has been placed parallel to the target, at a distance of 4 cm, and subsequently has been heated to temperatures ranging between 300 °C and 600 °C. Thin films morphology has been characterized by atomic force microscopy and secondary ion mass spectrometry. Biocompatibility of these thin films has been assessed by studying the cell attachment of L929 mouse fibroblasts.

  17. Effects of acidic deposition on paint: A chamber study

    SciTech Connect (OSTI)

    Spence, J.W.; Lemmons, T.J.; Hou, Y.; Schadt, R.J.; Fornes, R.E.

    1993-08-01

    Exterior acrylic latex and alkyd architectural coatings were exposed to different conditions in a chamber exposure system involving simulated sunlight, dew, and photochemical smog-containing sulfur dioxide (SO2). A simulated sunlight exposure of the coating films in the presence of clean air was also incorporated into the experimental design. Changes in surface features after 1,370 hours of exposure were characterized by scanning electron microscope (SEM) and energy dispersive analysis of x-rays (EDAX). Gaseous species that deposited to the films were determined by ion chromatography of the dew collections. Color-change measurements of the exposed films were recorded as Delta E values. Latex and alkyd films that were formulated with calcium carbonate (CACO3) as an extender pigment were found to undergo the most change in surface features, composition, and color.

  18. Degradation of Thermal Barrier Coatings from Deposits and Its Mitigation

    SciTech Connect (OSTI)

    Nitin Padture

    2011-12-31

    Ceramic thermal barrier coatings (TBCs) used in gas-turbine engines afford higher operating temperatures, resulting in enhanced efficiencies and performance. However, in the case of syngas-fired engines, fly ash particulate impurities that may be present in syngas can melt on the hotter TBC surfaces and form glassy deposits. These deposits can penetrate the TBCs leading to their failure. In experiments using lignite fly ash to simulate these conditions we show that conventional TBCs of composition 93wt% ZrO{sub 2} + 7wt% Y{sub 2}O{sub 3} (7YSZ) fabricated using the air plasma spray (APS) process are completely destroyed by the molten fly ash. The molten fly ash is found to penetrate the full thickness of the TBC. The mechanisms by which this occurs appear to be similar to those observed in degradation of 7YSZ TBCs by molten calcium-magnesium-aluminosilicate (CMAS) sand and by molten volcanic ash in aircraft engines. In contrast, APS TBCs of Gd{sub 2Zr{sub 2}O{sub 7} composition are highly resistant to attack by molten lignite fly ash under identical conditions, where the molten ash penetrates ~25% of TBC thickness. This damage mitigation appears to be due to the formation of an impervious, stable crystalline layer at the fly ash/Gd{sub 2}Zr{sub 2}O{sub 7} TBC interface arresting the penetrating moltenfly- ash front. Additionally, these TBCs were tested using a rig with thermal gradient and simultaneous accumulation of ash. Modeling using an established mechanics model has been performed to illustrate the modes of delamination, as well as further opportunities to optimize coating microstructure. Transfer of the technology was developed in this program to all interested parties.

  19. Reactive multilayers fabricated by vapor deposition. A critical review

    SciTech Connect (OSTI)

    Adams, D. P.

    2014-10-02

    The reactive multilayer thin films are a class of energetic materials that continue to attract attention for use in joining applications and as igniters. Generally composed of two reactants, these heterogeneous solids can be stimulated by an external source to promptly release stored chemical energy in a sudden emission of light and heat. In our critical review article, results from recent investigations of these materials are discussed. Discussion begins with a brief description of the vapor deposition techniques that provide accurate control of layer thickness and film composition. More than 50 reactive film compositions have been reported to date, with most multilayers fabricated by magnetron sputter deposition or electron-beam evaporation. In later sections, we review how multilayer ignition threshold, reaction rate, and total heat are tailored via thin film design. For example, planar multilayers with nanometer-scale periodicity exhibit rapid, self-sustained reactions with wavefront velocities up to 100 m/s. Numeric and analytical models have elucidated many of the fundamental processes that underlie propagating exothermic reactions while demonstrating how reaction rates vary with multilayer design. Recent, time-resolved diffraction and imaging studies have further revealed the phase transformations and the wavefront dynamics associated with propagating chemical reactions. Many reactive multilayers (e.g., Co/Al) form product phases that are consistent with published equilibrium phase diagrams, yet a few systems, such as Pt/Al, develop metastable products. The final section highlights current and emerging applications of reactive multilayers. Examples include reactive Ni(V)/Al and Pd/Al multilayers which have been developed for localized soldering of heat-sensitive components.

  20. Reactive multilayers fabricated by vapor deposition. A critical review

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Adams, D. P.

    2014-10-02

    The reactive multilayer thin films are a class of energetic materials that continue to attract attention for use in joining applications and as igniters. Generally composed of two reactants, these heterogeneous solids can be stimulated by an external source to promptly release stored chemical energy in a sudden emission of light and heat. In our critical review article, results from recent investigations of these materials are discussed. Discussion begins with a brief description of the vapor deposition techniques that provide accurate control of layer thickness and film composition. More than 50 reactive film compositions have been reported to date, withmore » most multilayers fabricated by magnetron sputter deposition or electron-beam evaporation. In later sections, we review how multilayer ignition threshold, reaction rate, and total heat are tailored via thin film design. For example, planar multilayers with nanometer-scale periodicity exhibit rapid, self-sustained reactions with wavefront velocities up to 100 m/s. Numeric and analytical models have elucidated many of the fundamental processes that underlie propagating exothermic reactions while demonstrating how reaction rates vary with multilayer design. Recent, time-resolved diffraction and imaging studies have further revealed the phase transformations and the wavefront dynamics associated with propagating chemical reactions. Many reactive multilayers (e.g., Co/Al) form product phases that are consistent with published equilibrium phase diagrams, yet a few systems, such as Pt/Al, develop metastable products. The final section highlights current and emerging applications of reactive multilayers. Examples include reactive Ni(V)/Al and Pd/Al multilayers which have been developed for localized soldering of heat-sensitive components.« less

  1. Characterization of selective tungsten films prepared by photo-chemical vapor deposition

    SciTech Connect (OSTI)

    Fang, Y.K.; Hwang, S.B.; Sun, C.Y. )

    1991-06-01

    This paper reports on selective photo-chemical vapor deposition (CVD) of tungsten films decomposed by direct photoexcitation of WF{sub 6}. Film deposition rate increased with increasing temperature but was only slightly dependent on WF{sub 6} gas concentration. The selectivity deteriorated with increasing deposition temperature, WF{sub 6} concentration, and deposition time. Typically, in order to achieve selectivity, the flow rate of WF{sub 6} must be lower than 35 sccm and the deposition temperature must be lower than 230{degrees}C. No encroachment and self-limited thickness problems were found as in the low-pressure chemical vapor deposition method. In general, tungsten films prepared by photo-CVD were amorphous as observed by x-ray diffraction analysis. After annealing, the tungsten had a polycrystalline structure with a resistivity of 18 {mu}{Omega}-cm.

  2. Filamentous carbon catalytic deposition of coal-tar pitch fraction on corundum

    SciTech Connect (OSTI)

    Martynkova, G.S.; Supova, M.

    2007-01-15

    Our work was focused on deposition of volatile hydrocarbons of carbonaceous precursor on corundum wafer, taking advantage of a metallic catalyst incorporated in precursor. Coal tar-pitch, namely a fraction soluble in toluene, served as precursor material for deposition of filamentous material. The toluene-soluble fraction of tar-pitch originally contained metallic particles of iron and nickel. During heat treatment up to 1000{sup o}C, metallic particles accompanied the volatile hydrocarbons conducive to forming a filamentous deposit. The deposit obtained demonstrates a semicrystalline material that has an irregular filamentous structure with an average filament diameter of 30 {mu}m. The presence of catalysts after the deposition process was proved in the deposit but catalysts were not found in the residuum.

  3. Process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition

    DOE Patents [OSTI]

    Lackey, Jr., Walter J.; Caputo, Anthony J.

    1986-01-01

    A chemical vapor deposition (CVD) process for preparing fiber-reinforced ceramic composites. A specially designed apparatus provides a steep thermal gradient across the thickness of a fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

  4. Process for depositing I-125 onto a substrate used to manufacture I-125 sources

    DOE Patents [OSTI]

    McGovern, James J.; Olynyk, Joseph M.

    1988-01-01

    The invention relates to a process for depositing I-125 on a substrate which comprises contacting a predetermined surface area of substrate with Xe-125 gas, whereby the Xe-125 decays to I-125 and the I-125 in turn deposits as a solid on the surface of the substrate, the contact being for a time sufficient to deposit at least about 1 microcurie of I-125. I-125 is thereby deposited in a relatively uniform amount over the surface area of the substrate. The substrate is then assayed to determine how much I-125 has been deposited. The substrate is then divided into pieces of measured surface area, each piece therefore containing a measured amount of deposited I-125, and each piece can then be used in the manufacture of an I-125 source.

  5. Sol-gel deposition of buffer layers on biaxially textured metal substances

    Office of Scientific and Technical Information (OSTI)

    (Patent) | SciTech Connect Sol-gel deposition of buffer layers on biaxially textured metal substances Citation Details In-Document Search Title: Sol-gel deposition of buffer layers on biaxially textured metal substances A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing

  6. Recommended Tritium Oxide Deposition Velocity For Use In Savannah River Site Safety Analyses

    SciTech Connect (OSTI)

    Lee, P. L.; Murphy, C. E.; Viner, B. J.; Hunter, C. H.

    2012-07-31

    This report documents the results of examining the deposition velocity of water to forests, the residence time of HTO in forests, and the relation between deposition velocity and residence time with specific consideration given to the topography and experimental work performed at SRS. A simple mechanistic model is used to obtain plausible deposition velocity and residence time values where experimental data are not available and recommendations are made for practical application in a safety analysis model.

  7. Mathematical modeling of silica deposition in Tongonan-I reinjection wells, Philippines

    SciTech Connect (OSTI)

    Malate, R.C.M.; O`Sullivan, M.J.

    1993-10-01

    Mathematical models of silica deposition are derived using the method of characteristics for the problem of variable rate injection into a well producing radially symmetric flow. Solutions are developed using the first order rate equation of silica deposition suggested by Rimstidt and Barnes (1980). The changes in porosity and permeability resulting from deposition are included in the models. The models developed are successfully applied in simulating the changes in injection capacity in some of the reinjection wells in Tongonan geothermal field, Philippines.

  8. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOE Patents [OSTI]

    Schmitt, J.J. III; Halpern, B.L.

    1993-10-26

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

  9. Vehicle Technologies Office Merit Review 2014: Atomic Layer Deposition for Stabilization of Silicon Anodes

    Broader source: Energy.gov [DOE]

    Presentation given by NREL at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about atomic layer deposition for...

  10. Solar-induced chemical vapor deposition of diamond-type carbon films

    DOE Patents [OSTI]

    Pitts, J. Roland; Tracy, C. Edwin; King, David E.; Stanley, James T.

    1994-01-01

    An improved chemical vapor deposition method for depositing transparent continuous coatings of sp.sup.3 -bonded diamond-type carbon films, comprising: a) providing a volatile hydrocarbon gas/H.sub.2 reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and b) directing a concentrated solar flux of from about 40 to about 60 watts/cm.sup.2 through said reactant mixture to produce substrate temperatures of about 750.degree. C. to about 950.degree. C. to activate deposition of the film on said substrate.

  11. High rate chemical vapor deposition of carbon films using fluorinated gases

    DOE Patents [OSTI]

    Stafford, Byron L.; Tracy, C. Edwin; Benson, David K.; Nelson, Arthur J.

    1993-01-01

    A high rate, low-temperature deposition of amorphous carbon films is produced by PE-CVD in the presence of a fluorinated or other halide gas. The deposition can be performed at less than 100.degree. C., including ambient room temperature, with a radio frequency plasma assisted chemical vapor deposition process. With less than 6.5 atomic percent fluorine incorporated into the amorphous carbon film, the characteristics of the carbon film, including index of refraction, mass density, optical clarity, and chemical resistance are within fifteen percent (15%) of those characteristics for pure amorphous carbon films, but the deposition rates are high.

  12. Automated video-microscopic imaging and data acquisition system for colloid deposition measurements

    DOE Patents [OSTI]

    Abdel-Fattah, Amr I.; Reimus, Paul W.

    2004-12-28

    A video microscopic visualization system and image processing and data extraction and processing method for in situ detailed quantification of the deposition of sub-micrometer particles onto an arbitrary surface and determination of their concentration across the bulk suspension. The extracted data includes (a) surface concentration and flux of deposited, attached and detached colloids, (b) surface concentration and flux of arriving and departing colloids, (c) distribution of colloids in the bulk suspension in the direction perpendicular to the deposition surface, and (d) spatial and temporal distributions of deposited colloids.

  13. Transmission electron microscopy of whiskers and hillocks formed on Al films deposited onto a glass

    SciTech Connect (OSTI)

    Saka, H.; Fujino, S.; Kuroda, K. [Department of Quantum Engineering, Nagoya University, Nagoya 464-01 (Japan); Tsujimoto, K.; Tsuji, S. [Display Technology, IBM Japan, Ltd., Shimotsuruma, Yamato, Kanagawa 242 (Japan); Takatsuji, H. [Display Technology, IBM Japan, Ltd., Ichimiyake, Yasu-gun, Shiga 520-23 (Japan)

    1998-01-05

    Whiskers and hillocks formed on an Al film deposited onto a glass substrate have been observed by means of a variety of transmission electron microscopy technique.

  14. Mn deposition on Ni{sub 2}MnGa(100) (Journal Article) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    The spot profile analysis indicates that after 0.2 monolayer (ML) deposition, the LEED ... (c) 2012 American Institute of Physics; Country of input: International Atomic Energy ...

  15. Energy deposition, heat flow, and rapid solidification during laser and electron beam irradiation of materials

    SciTech Connect (OSTI)

    White, C.W.; Aziz, M.J.

    1985-10-01

    The fundamentals of energy deposition, heat flow, and rapid solidification during energy deposition from lasers and electron beams is reviewed. Emphasis is placed on the deposition of energy from pulsed sources (10 to 100 ns pulse duration time) in order to achieve high heating and cooling rates (10/sup 8/ to 10/sup 10/ /sup 0/C/s) in the near surface region. The response of both metals and semiconductors to pulsed energy deposition is considered. Guidelines are presented for the choice of energy source, wavelength, and pulse duration time.

  16. A x-ray radiography-densitometry technique for the quantitative determination of metal deposit profiles

    SciTech Connect (OSTI)

    Will, F.G.; Iacovangelo, C.D.

    1984-03-01

    The application of x-ray radiography in conjunction with high resolution optical densitometry for the quantitative determination of metal deposit profiles parallel and perpendicular to the substrate surface is described. The principles of the technique and the range of its applicability are discussed. The technique is applied to the study of zinc deposition on highly porous carbon foams from circulating aqueous zinc bromide solutions. The effect of substrate pore size on the zinc distribution is explored. Zinc is found to deposit predominantly on the porous substrate/electrolyte and substrate/current collector interfaces. Smaller pore size favors smoother and more uniform deposits throughout the substrate.

  17. Solar-induced chemical vapor deposition of diamond-type carbon films

    DOE Patents [OSTI]

    Pitts, J.R.; Tracy, C.E.; King, D.E.; Stanley, J.T.

    1994-09-13

    An improved chemical vapor deposition method for depositing transparent continuous coatings of sp[sup 3]-bonded diamond-type carbon films, comprises: (a) providing a volatile hydrocarbon gas/H[sub 2] reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and (b) directing a concentrated solar flux of from about 40 to about 60 watts/cm[sup 2] through said reactant mixture to produce substrate temperatures of about 750 C to about 950 C to activate deposition of the film on said substrate. 11 figs.

  18. Preparation of membranes using solvent-less vapor deposition followed by in-situ polymerization

    DOE Patents [OSTI]

    O'Brien, Kevin C.; Letts, Stephan A.; Spadaccini, Christopher M.; Morse, Jeffrey C.; Buckley, Steven R.; Fischer, Larry E.; Wilson, Keith B.

    2010-07-13

    A system of fabricating a composite membrane from a membrane substrate using solvent-less vapor deposition followed by in-situ polymerization. A first monomer and a second monomer are directed into a mixing chamber in a deposition chamber. The first monomer and the second monomer are mixed in the mixing chamber providing a mixed first monomer and second monomer. The mixed first monomer and second monomer are solvent-less vapor deposited onto the membrane substrate in the deposition chamber. The membrane substrate and the mixed first monomer and second monomer are heated to produce in-situ polymerization and provide the composite membrane.

  19. Preparation of membranes using solvent-less vapor deposition followed by in-situ polymerization

    DOE Patents [OSTI]

    O'Brien, Kevin C.; Letts, Stephan A.; Spadaccini, Christopher M.; Morse, Jeffrey C.; Buckley, Steven R.; Fischer, Larry E.; Wilson, Keith B.

    2012-01-24

    A system of fabricating a composite membrane from a membrane substrate using solvent-less vapor deposition followed by in-situ polymerization. A first monomer and a second monomer are directed into a mixing chamber in a deposition chamber. The first monomer and the second monomer are mixed in the mixing chamber providing a mixed first monomer and second monomer. The mixed first monomer and second monomer are solvent-less vapor deposited onto the membrane substrate in the deposition chamber. The membrane substrate and the mixed first monomer and second monomer are heated to produce in-situ polymerization and provide the composite membrane.

  20. Influence of deposition variables on LPCVD tungsten films deposited by the WF/sub 6//Si reduction

    SciTech Connect (OSTI)

    Tracy, M.E.

    1985-01-01

    In an effort to isolate and study the Si reduction of WF/sub 6/ by the reduction reaction 2 WF/sub 6/ + 3 Si ..-->.. 2 W + 3 SiF/sub 4/, a systematic study of the influence of temperature, substrate doping, deposition time and variable flow rates of tungsten hexafluoride (WF/sub 6/) was conducted. The effect of varying these parameters on film thickness, layer resistivity, encroachment and adhesion was investigated. A set of operating conditions has been defined that yield stable, adherent, self-limiting films of -100A thickness that are free from encroachment. Film quality was found to be relatively insensitive to moderate variations in process parameters, a favorable indication in terms of process integration and manufacturability.

  1. Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

    SciTech Connect (OSTI)

    Elliot, Alan J. E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z. E-mail: jwu@ku.edu; Yu, Haifeng; Zhao, Shiping

    2014-07-15

    Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ?1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

  2. A simple method to deposit palladium doped SnO{sub 2} thin films using plasma enhanced chemical vapor deposition technique

    SciTech Connect (OSTI)

    Kim, Young Soon; Wahab, Rizwan; Shin, Hyung-Shik [School of Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Ansari, S. G.; Ansari, Z. A. [Center for Interdisciplinary Research in Basic Sciences, Jamia Millia Islamia, Jamia Nagar, New Delhi 110025 (India)

    2010-11-15

    This work presents a simple method to deposit palladium doped tin oxide (SnO{sub 2}) thin films using modified plasma enhanced chemical vapor deposition as a function of deposition temperature at a radio frequency plasma power of 150 W. Stannic chloride (SnCl{sub 4}) was used as precursor and oxygen (O{sub 2}, 100 SCCM) (SCCM denotes cubic centimeter per minute at STP) as reactant gas. Palladium hexafluroacetyleacetonate (Pd(C{sub 5}HF{sub 6}O{sub 2}){sub 2}) was used as a precursor for palladium. Fine granular morphology was observed with tetragonal rutile structure. A peak related to Pd{sub 2}Sn is observed, whose intensity increases slightly with deposition temperature. Electrical resistivity value decreased from 8.6 to 0.9 m{Omega} cm as a function of deposition temperature from 400 to 600 deg. C. Photoelectron peaks related to Sn 3d, Sn 3p3, Sn 4d, O 1s, and C 1s were detected with varying intensities as a function of deposition temperature.

  3. Low temperature junction growth using hot-wire chemical vapor deposition

    DOE Patents [OSTI]

    Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

    2014-02-04

    A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

  4. Chemical vapor deposition of W-Si-N and W-B-N

    DOE Patents [OSTI]

    Fleming, James G.; Roherty-Osmun, Elizabeth Lynn; Smith, Paul M.; Custer, Jonathan S.; Jones, Ronald V.; Nicolet, Marc-A.; Madar, Roland; Bernard, Claude

    1999-01-01

    A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

  5. Chemical vapor deposition of W-Si-N and W-B-N

    DOE Patents [OSTI]

    Fleming, J.G.; Roherty-Osmun, E.L.; Smith, P.M.; Custer, J.S.; Jones, R.V.; Nicolet, M.; Madar, R.; Bernard, C.

    1999-06-29

    A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF[sub 6], either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications. 10 figs.

  6. Liquid precursor for deposition of indium selenide and method of preparing the same

    DOE Patents [OSTI]

    Curtis, Calvin J.; Miedaner, Alexander; van Hest, Marinus Franciscus Antonius Maria; Ginley, David S.; Hersh, Peter A.; Eldada, Louay; Stanbery, Billy J.

    2015-09-22

    Liquid precursors containing indium and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and method of depositing a liquid precursor on a substrate are also disclosed.

  7. High Gradient Accelerator Cavities Using Atomic Layer Deposition

    SciTech Connect (OSTI)

    Ives, Robert Lawrence; Parsons, Gregory; Williams, Philip; Oldham, Christopher; Mundy, Zach; Dolgashev, Valery

    2014-12-09

    In the Phase I program, Calabazas Creek Research, Inc. (CCR), in collaboration with North Carolina State University (NCSU), fabricated copper accelerator cavities and used Atomic Layer Deposition (ALD) to apply thin metal coatings of tungsten and platinum. It was hypothesized that a tungsten coating would provide a robust surface more resistant to arcing and arc damage. The platinum coating was predicted to reduce processing time by inhibiting oxides that form on copper surfaces soon after machining. Two sets of cavity parts were fabricated. One was coated with 35 nm of tungsten, and the other with approximately 10 nm of platinum. Only the platinum cavity parts could be high power tested during the Phase I program due to schedule and funding constraints. The platinum coated cavity exhibit poor performance when compared with pure copper cavities. Not only did arcing occur at lower power levels, but the processing time was actually longer. There were several issues that contributed to the poor performance. First, machining of the base copper cavity parts failed to achieve the quality and cleanliness standards specified to SLAC National Accelerator Center. Secondly, the ALD facilities were not configured to provide the high levels of cleanliness required. Finally, the nanometer coating applied was likely far too thin to provide the performance required. The coating was ablated or peeled from the surface in regions of high fields. It was concluded that the current ALD process could not provide improved performance over cavities produced at national laboratories using dedicated facilities.

  8. Method of depositing buffer layers on biaxially textured metal substrates

    DOE Patents [OSTI]

    Beach, David B. (Knoxville, TN); Morrell, Jonathan S. (Knoxville, TN); Paranthaman, Mariappan (Knoxville, TN); Chirayil, Thomas (Knoxville, TN); Specht, Eliot D. (Knoxville, TN); Goyal, Amit (Knoxville, TN)

    2002-08-27

    A laminate article comprises a substrate and a biaxially textured (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer over the substrate, wherein 0deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sup.1.sub.x RE.sup.2.sub.(1-x)).sub.2 O.sub.3 buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

  9. Growth of graphene underlayers by chemical vapor deposition

    SciTech Connect (OSTI)

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu; Charlie Johnson, A. T.

    2013-11-15

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called inverted wedding cake stacking in multilayer graphene growth.

  10. Apparatus and method for depositing coating onto porous substrate

    DOE Patents [OSTI]

    Isenberg, A.O.; Zymboly, G.E.

    1986-09-02

    Disclosed is an apparatus for forming a chemically vapor deposited coating on a porous substrate where oxygen from a first gaseous reactant containing a source of oxygen permeates through the pores of the substrate to react with a second gaseous reactant that is present on the other side of the substrate. The apparatus includes means for controlling the pressure and flow rate of each gaseous reactant, a manometer for measuring the difference in pressure between the gaseous reactants on each side of the substrate, and means for changing the difference in pressure between the gaseous reactants. Also disclosed is a method of detecting and closing cracks in the coating by reducing the pressure difference between the two gaseous reactants whenever the pressure difference falls suddenly after gradually rising, then again increasing the pressure difference on the two gases. The attack by the by-products of the reaction on the substrate are reduced by maintaining the flow rate of the first reactant through the pores of the substrate. 1 fig.

  11. Electrochemically deposited BiTe-based nanowires for thermoelectric applications

    SciTech Connect (OSTI)

    Ng, Inn-Khuan; Kok, Kuan-Ying; Rahman, Che Zuraini Che Ab; Saidin, Nur Ubaidah; Ilias, Suhaila Hani; Choo, Thye-Foo

    2014-02-12

    Nanostructured materials systems such as thin-films and nanowires (NWs) are promising for thermoelectric power generation and refrigeration compared to traditional counterparts in bulk, due to their enhanced thermoelectric figures-of-merit. BiTe and its derivative compounds, in particular, are well-known for their near-room temperature thermoelectric performance. In this work, both the binary and ternary BiTe-based nanowires namely, BiTe and BiSbTe, were synthesized using template-assisted electrodeposition. Diameters of the nanowires were controlled by the pore sizes of the anodised alumina (AAO) templates used. Systematic study on the compositional change as a function of applied potential was carried out via Linear Sweep Voltanmetry (LSV). Chemical compositions of the nanowires were studied using Energy Dispersive X-ray Spectrometry (EDXS) and their microstructures evaluated using diffraction and imaging techniques. Results from chemical analysis on the nanowires indicated that while the Sb content in BiSbTe nanowires increased with more negative deposition potentials, the formation of Te{sup 0} and Bi{sub 2}Te{sub 3} were favorable at more positive potentials.

  12. Apparatus and method for depositing coating onto porous substrate

    DOE Patents [OSTI]

    Isenberg, Arnold O.; Zymboly, Gregory E.

    1986-01-01

    Disclosed is an apparatus for forming a chemically vapor deposited coating on a porous substrate where oxygen from a first gaseous reactant containing a source of oxygen permeates through the pores of the substrate to react with a second gaseous reactant that is present on the other side of the substrate. The apparatus includes means for controlling the pressure and flow rate of each gaseous reactant, a manometer for measuring the difference in pressure between the gaseous reactants on each side of the substrate, and means for changing the difference in pressure between the gaseous reactants. Also disclosed is a method of detecting and closing cracks in the coating by reducing the pressure difference between the two gaseous reactants whenever the pressure difference falls suddenly after gradually rising, then again increasing the pressure difference on the two gases. The attack by the by-products of the reaction on the substrate are reduced by maintaining the flow rate of the first reactant through the pores of the substrate.

  13. Fuel, lubricant and additive effects in combustion chamber deposit formation

    SciTech Connect (OSTI)

    Kelemen, S.R.; Homan, H.S.

    1996-10-01

    CCD causes octane requirement increase (ORI) and can potentially contributes to exhaust emissions and combustion chamber deposit interference (CCDI). Experiments were conducted to identify the separate fuel, lubricant and additive contributions to the amount and composition of CCD. CCD originates from multiple sources. Gasoline hydrocarbon components, gasoline additives, engine lubricant, and atmospheric nitrogen contribute to CCD in different ways. With some fuels the engine lubricant is the main contributor to CCD and this is shown by the high ash level in the CCD. For other fuels CCD is predominantly organic. Significant amounts of nitrogen were found in the CCD even when the fuel and lubricant were nitrogen free. The pyrolysis reactivity of different CCDs was studied to gain an understanding about the transformations that potentially happen over longer times and lower temperatures on the combustion chamber walls. In all cases during mild pyrolysis (375{degrees}C) there was a substantial increase in the level of aromatic carbon and a decrease in the level of organic oxygen. The largest increases in the amount of aromatic carbon occurred for CCDs that were the least aromatic.

  14. Sensing system for detection and control of deposition on pendant tubes in recovery and power boilers

    DOE Patents [OSTI]

    Kychakoff, George; Afromowitz, Martin A; Hugle, Richard E

    2005-06-21

    A system for detection and control of deposition on pendant tubes in recovery and power boilers includes one or more deposit monitoring sensors operating in infrared regions and about 4 or 8.7 microns and directly producing images of the interior of the boiler. An image pre-processing circuit (95) in which a 2-D image formed by the video data input is captured, and includes a low pass filter for performing noise filtering of said video input. An image segmentation module (105) for separating the image of the recovery boiler interior into background, pendant tubes, and deposition. An image-understanding unit (115) matches derived regions to a 3-D model of said boiler. It derives a 3-D structure the deposition on pendant tubes in the boiler and provides the information about deposits to the plant distributed control system (130) for more efficient operation of the plant pendant tube cleaning and operating systems.

  15. Method for continuous control of composition and doping of pulsed laser deposited films by pressure control

    DOE Patents [OSTI]

    Lowndes, Douglas H.; McCamy, James W.

    1996-01-01

    A method for growing a deposit upon a substrate of semiconductor material involves the utilization of pulsed laser deposition techniques within a low-pressure gas environment. The substrate and a target of a first material are positioned within a deposition chamber and a low-pressure gas atmosphere is developed within the chamber. The substrate is then heated, and the target is irradiated, so that atoms of the target material are ablated from the remainder of the target, while atoms of the gas simultaneously are adsorbed on the substrate/film surface. The ablated atoms build up upon the substrate, together with the adsorbed gas atoms to form the thin-film deposit on the substrate. By controlling the pressure of the gas of the chamber atmosphere, the composition of the formed deposit can be controlled, and films of continuously variable composition or doping can be grown from a single target of fixed composition.

  16. Method for continuous control of composition and doping of pulsed laser deposited films

    DOE Patents [OSTI]

    Lowndes, Douglas H.; McCamy, James W.

    1995-01-01

    A method for growing a deposit upon a substrate of semiconductor material involves the utilization of pulsed laser deposition techniques within a low-pressure gas environment. The substrate and a target of a first material are positioned within a deposition chamber and a low-pressure gas atmosphere is developed within the chamber. The substrate is then heated, and the target is irradiated, so that atoms of the target material are ablated from the remainder of the target, while atoms of the gas simultaneously are adsorbed on the substrate/film surface. The ablated atoms build up upon the substrate, together with the adsorbed gas atoms to form the thin-film deposit on the substrate. By controlling the pressure of the gas of the chamber atmosphere, the composition of the formed deposit can be controlled, and films of continuously variable composition or doping can be grown from a single target of fixed composition.

  17. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing,more » between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.« less

  18. Deposition of metallic gallium on re-crystallized ceramic material during focused ion beam milling

    SciTech Connect (OSTI)

    Muoz-Tabares, J.A.; Reyes-Gasga, J.

    2013-12-15

    We report a new kind of artifact observed in the preparation of a TEM sample of zirconia by FIB, which consists in the deposition of metallic gallium nano-dots on the TEM sample surface. High resolution TEM images showed a microstructure of fine equiaxed grains of ? 5 nm, with some of them possessing two particular characteristics: high contrast and well-defined fast Fourier transform. These grains could not be identified as any phase of zirconia but it was possible to identify them as gallium crystals in the zone axis [110]. Based on HRTEM simulations, the possible orientations between zirconia substrate and deposited gallium are discussed in terms of lattice mismatch and oxygen affinity. - Highlights: We show a new type of artifact induced during preparation of TEM samples by FIB. Deposition of Ga occurs due to its high affinity for oxygen. Materials with small grain size (? 5 nm) could promote Ga deposition. Small grain size permits the elastic accommodation of deposited Ga.

  19. High power pulsed magnetron sputtering: A method to increase deposition rate

    SciTech Connect (OSTI)

    Raman, Priya McLain, Jake; Ruzic, David N; Shchelkanov, Ivan A.

    2015-05-15

    High power pulsed magnetron sputtering (HPPMS) is a state-of-the-art physical vapor deposition technique with several industrial applications. One of the main disadvantages of this process is its low deposition rate. In this work, the authors report a new magnetic field configuration, which produces deposition rates twice that of conventional magnetron's dipole magnetic field configuration. Three different magnet pack configurations are discussed in this paper, and an optimized magnet pack configuration for HPPMS that leads to a higher deposition rate and nearly full-face target erosion is presented. The discussed magnetic field produced by a specially designed magnet assembly is of the same size as the conventional magnet assembly and requires no external fields. Comparison of deposition rates with different power supplies and the electron trapping efficiency in complex magnetic field arrangements are discussed.

  20. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.

  1. Geometry, lateral variability, and preservation of downlapped regressive shelf deposits, eastern Tyrrhenian Margin, Italy

    SciTech Connect (OSTI)

    Field, M.E. ); Trincardi, F. )

    1990-05-01

    The shelf of the eastern Tyrrhenian margin changes substantially in width, shelf-break depth, and sea-floor steepness over relatively short distances, largely due to marked lateral changes in geologic structure. Remnants of late Pleistocene prograded coastal deposits are locally preserved on the middle and outer parts of this complex shelf. Through the authors studies of these prograded deposits they recognize two major controls on the distribution, lateral extent, thickness, and preservation potential. First, prograded (downlapped) deposits formed only where the physiographic shelf break was deeper than the lowstand shoreline, thus providing accommodation space for the lowstand deposits. Second, the proximity and relative size of sediment sources and the local coastal dispersal system influenced the geometry of the deposit. Mid-shelf and shelf-margin bodies composed of seaward-steepening downlapping reflectors were deposited as thin-to-thick continuous prograding sheets over an irregular eroded shelf surface and onto the shelf edge during the last fall and lowstand of sea level. A dearth of sediment at the end of lowstand conditions led to a switch from deposition to erosion. During sea level rise, shoreface erosion produced a major marine erosional (ravinement) surface landward of the 120-m isobath, and much, and in many places all, of the downlapping deposit was removed. Preservation of downlapping deposits is largely a function of their thickness. Thick continuous deposits are common on the shelf edge, whereas on the mid-shelf only thin remnants are preserved locally where depressions or morphologic steps were present in the shelf surface.

  2. Geology of uranium deposits in the southern part of the Rocky Mountain province of Colorado

    SciTech Connect (OSTI)

    Malan, R.C.

    1983-07-01

    This report summarizes the geology of uranium deposits in the southern part of the Rocky Mountains of Colorado, an area of about 20,000 square miles. In January 1966, combined ore reserves and ore production at 28 uranium deposits were about 685,000 tons of ore averaging 0.24 percent U/sub 3/O/sub 8/ (3.32 million pounds U/sub 3/O/sub 8/). About half of these deposits each contain <1,000 tons of ore. The two largest deposits, the Pitch in the Marshall Pass locality southwest of Salida and the T-1 in the Cochetopa locality southeast of Gunnison, account for about 90 percent of all production and available reserves. The probability in excellent for major expansion of reserves in Marshall Pass and is favorable at a few other vein localities. There are six types of uranium deposits, and there were at least four ages of emplacement of these deposits in the southern part of the Colorado Rockies. There are eight types of host rocks of eight different ages. Veins and stratiform deposits each account for about 40 percent of the total number of deposits, but the veins of early and middle Tertiary age account for nearly all of the total reserves plus production. The remaining 20 percent of the deposits include uraniferous pegmatites, irregular disseminations in porphyry, and other less important types. The wall rocks at the large Tertiary vein deposits in the southern part of the Rocky Mountains of Colorado are Paleozoic and Mesozoic sedimentary rocks, whereas Precambrian metamorphic wall rocks predominate at the large veins in the Front Range of the northern Colorado Rockies. Metallogenetic considerations and tectonic influences affecting the distribution of uranium in Colorado and in adjacent portions of the western United States are analyzed.

  3. Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering

    SciTech Connect (OSTI)

    Jagannadham, Kasichainula

    2015-05-15

    Nitride films of Ti, Cr, and W were deposited using reactive magnetron sputtering from metal targets in argon and nitrogen plasma. TiN films with (200) orientation were achieved on silicon (100) at the substrate temperature of 500 and 600?C. The films were polycrystalline at lower temperature. An amorphous interface layer was observed between the TiN film and Si wafer deposited at 600?C. TiN film deposited at 600?C showed the nitrogen to Ti ratio to be near unity, but films deposited at lower temperature were nitrogen deficient. CrN film with (200) orientation and good stoichiometry was achieved at 600?C on Si(111) wafer but the film deposited at 500?C showed cubic CrN and hexagonal Cr{sub 2}N phases with smaller grain size and amorphous back ground in the x-ray diffraction pattern. An amorphous interface layer was not observed in the cubic CrN film on Si(111) deposited at 600?C. Nitride film of tungsten deposited at 600?C on Si(100) wafer was nitrogen deficient, contained both cubic W{sub 2}N and hexagonal WN phases with smaller grain size. Nitride films of tungsten deposited at 500?C were nonstoichiometric and contained cubic W{sub 2}N and unreacted W phases. There was no amorphous phase formed along the interface for the tungsten nitride film deposited at 600?C on the Si wafer. Thermal conductivity and interface thermal conductance of all the nitride films of Ti, Cr, and W were determined by transient thermoreflectance technique. The thermal conductivity of the films as function of deposition temperature, microstructure, nitrogen stoichiometry and amorphous interaction layer at the interface was determined. Tungsten nitride film containing both cubic and hexagonal phases was found to exhibit much higher thermal conductivity and interface thermal conductance. The amorphous interface layer was found to reduce effective thermal conductivity of TiN and CrN films.

  4. Improved Formulations for Air-Surface Exchanges Related to National Security Needs: Dry Deposition Models

    SciTech Connect (OSTI)

    Droppo, James G.

    2006-07-01

    The Department of Homeland Security and others rely on results from atmospheric dispersion models for threat evaluation, event management, and post-event analyses. The ability to simulate dry deposition rates is a crucial part of our emergency preparedness capabilities. Deposited materials pose potential hazards from radioactive shine, inhalation, and ingestion pathways. A reliable characterization of these potential exposures is critical for management and mitigation of these hazards. A review of the current status of dry deposition formulations used in these atmospheric dispersion models was conducted. The formulations for dry deposition of particulate materials from am event such as a radiological attack involving a Radiological Detonation Device (RDD) is considered. The results of this effort are applicable to current emergency preparedness capabilities such as are deployed in the Interagency Modeling and Atmospheric Assessment Center (IMAAC), other similar national/regional emergency response systems, and standalone emergency response models. The review concludes that dry deposition formulations need to consider the full range of particle sizes including: 1) the accumulation mode range (0.1 to 1 micron diameter) and its minimum in deposition velocity, 2) smaller particles (less than .01 micron diameter) deposited mainly by molecular diffusion, 3) 10 to 50 micron diameter particles deposited mainly by impaction and gravitational settling, and 4) larger particles (greater than 100 micron diameter) deposited mainly by gravitational settling. The effects of the local turbulence intensity, particle characteristics, and surface element properties must also be addressed in the formulations. Specific areas for improvements in the dry deposition formulations are 1) capability of simulating near-field dry deposition patterns, 2) capability of addressing the full range of potential particle properties, 3) incorporation of particle surface retention/rebound processes, and. 4) development of dry deposition formulations applicable to urban areas. Also to improve dry deposition modeling capabilities, atmospheric dispersion models in which the dry deposition formulations are imbedded need better source-term plume initialization and improved in-plume treatment of particle growth processes. Dry deposition formulations used in current models are largely inapplicable to the complex urban environment. An improved capability is urgently needed to provide surface-specific information to assess local exposure hazard levels in both urban and non-urban areas on roads, buildings, crops, rivers, etc. A model improvement plan is developed with a near-term and far-term component. Despite some conceptual limitations, the current formulations for particle deposition based on a resistance approach have proven to provide reasonable dry deposition simulations. For many models with inadequate dry deposition formulations, adding or improving a resistance approach will be the desirable near-term update. Resistance models however are inapplicable aerodynamically very rough surfaces such as urban areas. In the longer term an improved parameterization of dry deposition needs to be developed that will be applicable to all surfaces, and in particular urban surfaces.

  5. DEPOSITION VELOCITY ESTIMATION WITH THE GENII V2 SOFTWARE

    SciTech Connect (OSTI)

    Hutchins, H.

    2012-04-23

    In 2010, the Department of Energy (DOE) Chief of Nuclear Safety and Office of Health, Safety and Security (HSS), with the support of industry experts in atmospheric sciences and accident dose consequences analysis, performed detailed analyses of the basis for the dry deposition velocity (DV) values used in the MACCS2 computer code. As a result of these analyses, DOE concluded that the historically used default DV values of 1 centimeter/second (cm/s) for unfiltered/unmitigated releases and 0.1 cm/s for filtered/mitigated releases may not be reasonably conservative for all DOE sites and accident scenarios. HSS recently issued Safety Bulletin 2011-02, Accident Analysis Parameter Update, recommending the use of the newly developed default DV, 0.1 cm/s for an unmitigated/unfiltered release. Alternatively site specific DV values can be developed using GENII version 2 (GENII v2) computer code. Key input parameters for calculating DV values include surface roughness, maximum wind speed for calm, particle size, particle density and meteorological data (wind speed and stability class). This paper will include reasonably conservative inputs, and a truncated parametric study. In lieu of the highly-conservative recommended DV value (0.1cm/s) for unmitigated/unfiltered release, GENII v2 has been used to justify estimated 95th percentile DV values. Also presented here are atmospheric dilution factors ({chi}/Q values) calculated with the MACCS2 code using the DV values form GENII v2, {chi}/Q values calculated directly with GENII v2, and a discussion of these results compare with one another. This paper will give an overview of the process of calculating DV with GENII v2 including a discussion of the sensitivity of input parameters.

  6. Electrowetting on plasma-deposited fluorocarbon hydrophobic films for biofluid transport in microfluidics

    SciTech Connect (OSTI)

    Bayiati, P.; Tserepi, A.; Petrou, P. S.; Kakabakos, S. E.; Misiakos, K.; Gogolides, E. [Institute of Microelectronics-NCSR 'Demokritos', POB 60228, 153 10 Aghia Paraskevi, Attiki (Greece); Institute of Radioisotopes and Radiodiagnostic Products-NCSR 'Demokritos', POB 60228, 153 10 Aghia Paraskevi, Attiki (Greece); Institute of Microelectronics-NCSR 'Demokritos', POB 60228, 153 10 Aghia Paraskevi, Attiki (Greece)

    2007-05-15

    The present work focuses on the plasma deposition of fluorocarbon (FC) films on surfaces and the electrostatic control of their wettability (electrowetting). Such films can be employed for actuation of fluid transport in microfluidic devices, when deposited over patterned electrodes. Here, the deposition was performed using C{sub 4}F{sub 8} and the plasma parameters that permit the creation of films with optimized properties desirable for electrowetting were established. The wettability of the plasma-deposited surfaces was characterized by means of contact angle measurements (in the static and dynamic mode). The thickness of the deposited films was probed in situ by means of spectroscopic ellipsometry, while the surface roughness was provided by atomic force microscopy. These plasma-deposited FC films in combination with silicon nitride, a material of high dielectric constant, were used to create a dielectric structure that requires reduced voltages for successful electrowetting. Electrowetting experiments using protein solutions were conducted on such optimized dielectric structures and were compared with similar structures bearing commercial spin-coated Teflon registered amorphous fluoropolymer (AF) film as the hydrophobic top layer. Our results show that plasma-deposited FC films have desirable electrowetting behavior and minimal protein adsorption, a requirement for successful transport of biological solutions in 'digital' microfluidics.

  7. Thick adherent dielectric films on plastic substrates and method for depositing same

    DOE Patents [OSTI]

    Wickboldt, Paul; Ellingboe, Albert R.; Theiss, Steven D.; Smith, Patrick M.

    2002-01-01

    Thick adherent dielectric films deposited on plastic substrates for use as a thermal barrier layer to protect the plastic substrates from high temperatures which, for example, occur during laser annealing of layers subsequently deposited on the dielectric films. It is desirable that the barrier layer has properties including: a thickness of 1 .mu.m or greater, adheres to a plastic substrate, does not lift-off when cycled in temperature, has few or no cracks and does not crack when subjected to bending, resistant to lift-off when submersed in fluids, electrically insulating and preferably transparent. The thick barrier layer may be composed, for example, of a variety of dielectrics and certain metal oxides, and may be deposited on a variety of plastic substrates by various known deposition techniques. The key to the method of forming the thick barrier layer on the plastic substrate is maintaining the substrate cool during deposition of the barrier layer. Cooling of the substrate maybe accomplished by the use of a cooling chuck on which the plastic substrate is positioned, and by directing cooling gas, such as He, Ar and N.sub.2, between the plastic substrate and the cooling chucks. Thick adherent dielectric films up to about 5 .mu.m have been deposited on plastic substrates which include the above-referenced properties, and which enable the plastic substrates to withstand laser processing temperatures applied to materials deposited on the dielectric films.

  8. A review of basic phenomena and techniques for sputter-deposition of high temperature superconducting films

    SciTech Connect (OSTI)

    Auciello, O. North Carolina State Univ., Raleigh, NC . Dept. of Materials Science and Engineering); Ameen, M.S.; Kingon, A.I.; Lichtenwalner, D.J. . Dept. of Materials Science and Engineering); Krauss, A.R. )

    1990-01-01

    The processes involved in plasma and ion beam sputter-deposition of high temperature superconducting thin films are critically reviewed. Recent advances in the development of these techniques are discussed in relation to basic physical phenomena, specific to each technique, which must be understood before high quality films can be produced. Control of film composition is a major issue in sputter-deposition of multicomponent materials. Low temperature processing of films is a common goal for each technique, particularly in relation to integrating high temperature superconducting films with the current microelectronics technology. It has been understood for some time that for Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} deposition, the most intensely studied high-{Tc} compound, incorporation of sufficient oxygen into the film during deposition is necessary to produce as-deposited superconducting films at relatively substrate temperatures. Recent results have shown that with the use of suitable buffer layers, high quality Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} sputtered films can be obtained on Si substrates without the need for post-deposition anneal processing. This review is mainly focussed on issues related to sputter-deposition of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} thin films, although representative results concerning the bismuth and thallium based compounds are included. 143 refs., 11 figs.

  9. Method For Plasma Source Ion Implantation And Deposition For Cylindrical Surfaces

    DOE Patents [OSTI]

    Fetherston, Robert P. , Shamim, Muhammad M. , Conrad, John R.

    1997-12-02

    Uniform ion implantation and deposition onto cylindrical surfaces is achieved by placing a cylindrical electrode in coaxial and conformal relation to the target surface. For implantation and deposition of an inner bore surface the electrode is placed inside the target. For implantation and deposition on an outer cylindrical surface the electrode is placed around the outside of the target. A plasma is generated between the electrode and the target cylindrical surface. Applying a pulse of high voltage to the target causes ions from the plasma to be driven onto the cylindrical target surface. The plasma contained in the space between the target and the electrode is uniform, resulting in a uniform implantation or deposition of the target surface. Since the plasma is largely contained in the space between the target and the electrode, contamination of the vacuum chamber enclosing the target and electrodes by inadvertent ion deposition is reduced. The coaxial alignment of the target and the electrode may be employed for the ion assisted deposition of sputtered metals onto the target, resulting in a uniform coating of the cylindrical target surface by the sputtered material. The independently generated and contained plasmas associated with each cylindrical target/electrode pair allows for effective batch processing of multiple cylindrical targets within a single vacuum chamber, resulting in both uniform implantation or deposition, and reduced contamination of one target by adjacent target/electrode pairs.

  10. Experiments measuring particle deposition from fully developed turbulent flow in ventilation ducts

    SciTech Connect (OSTI)

    Sippola, Mark R.; Nazaroff, William W.

    2003-08-01

    Particle deposition in ventilation ducts influences particle exposures of building occupants and may lead to a variety of indoor air quality concerns. Experiments have been performed in a laboratory to study the effects of particle size and air speed on deposition rates of particles from turbulent air flows in galvanized steel and internally insulated ducts with hydraulic diameters of 15.2 cm. The duct systems were constructed of materials typically found in commercial heating, ventilating and air conditioning (HVAC) systems. In the steel duct system, experiments with nominal particle sizes of 1, 3, 5, 9 and 16 {micro}m were conducted at each of three nominal air speeds: 2.2, 5.3 and 9.0 m/s. In the insulated duct system, deposition rates of particles with nominal sizes of 1, 3, 5, 8 and 13 {micro}m were measured at nominal air speeds of 2.2, 5.3 and 8.8 m/s. Fluorescent techniques were used to directly measure the deposition velocities of monodisperse fluorescent particles to duct surfaces (floor, wall and ceiling) at two straight duct sections where the turbulent flow profile was fully developed. In steel ducts, deposition rates were higher to the duct floor than to the wall, which were, in turn, greater than to the ceiling. In insulated ducts, deposition was nearly the same to the duct floor, wall and ceiling for a given particle size and air speed. Deposition to duct walls and ceilings was greatly enhanced in insulated ducts compared to steel ducts. Deposition velocities to each of the three duct surface orientations in both systems were found to increase with increasing particle size or air velocity over the ranges studied. Deposition rates measured in the current experiments were in general agreement with the limited observations of similar systems by previous researchers.

  11. Tectonic controls on deposition and preservation of Pennsylvanian Tensleep Formation, Bighorn basin, Wyoming

    SciTech Connect (OSTI)

    Kelly Anne, O.; Horne, J.C.; Wheeler, D.M.; Musgrave, C.E.

    1986-08-01

    During deposition of the Tensleep Formation, a shallow, semirestricted portion of a major seaway that occupied the geosynclinal area to the west extended into the area of the present-day Bighorn basin. Limiting the transgression of this sea was the Beartooth high on the north and the Bighorn high on the east and southeast. On the western side of the area, a southerly extension of the Yellowstone high restricted circulation. The lower Tensleep Formation (Desmoinesian), characterized by extensive marine influence, was deposited as coastal sand dunes and interdunes over subaerially exposed structural highs. These deposits grade basinward into shoreface sandstones, which in turn grade into sandstones and carbonates of the shelf environment. During deposition of upper Tensleep strata (Missourian through Virgilian), marine waters were less widespread. The Greybull arch, a northeast-trending feature in the northern part of the area, was uplifted, dividing the shallow sea into two parts. The upper Tensleep Formation was deposited as a terrestrial sand sea over the Bighorn high. Coastal dunes and interdunes were deposited seaward of the sand seas and over the Beartooth high, the Greybull arch, and the southerly extension of the Yellowstone high. These deposits grade basinward into clastic shoreface deposits. Following Tensleep deposition, the region underwent southward tilting, which caused exposure and erosion of the Tensleep Formation. The resulting unconformity surface was deeply incised by a dendritic drainage system that controlled the thickness of the formation. The Greybull arch and the Bighorn high acted as significant drainage divides, over which very little of the formation was preserved.

  12. Texture evolution in nanocrystalline iron films deposited using biased magnetron sputtering

    SciTech Connect (OSTI)

    Vetterick, G.; Taheri, M. L.; Baldwin, J. K.; Misra, A.

    2014-12-21

    Fe thin films were deposited on sodium chloride (NaCl) substrates using magnetron sputtering to investigate means of texture control in free standing metal films. The Fe thin films were studied using transmission electron microscopy equipped with automated crystallographic orientation microscopy. Using this technique, the microstructure of each film was characterized in order to elucidate the effects of altering deposition parameters. The natural tendency for Fe films grown on (100) NaCl is to form a randomly oriented nanocrystalline microstructure. By careful selection of substrate and deposition conditions, it is possible to drive the texture of the film toward a single (100) orientation while retaining the nanocrystalline microstructure.

  13. Massive sulfide deposits and hydrothermal solutions: incremental reaction modeling of mineral precipitation and sulfur isotopic evolution

    SciTech Connect (OSTI)

    Janecky, D.R.

    1986-01-01

    Incremental reaction path modeling of chemical and sulfur isotopic reactions occurring in active hydrothermal vents on the seafloor, in combination with chemical and petrographic data from sulfide samples from the seafloor and massive sulfide ore deposits, allows a detailed examination of the processes involved. This paper presents theoretical models of reactions of two types: (1) adiabatic mixing between hydrothermal solution and seawater, and (2) reaction of hydrothermal solution with sulfide deposit materials. In addition, reaction of hydrothermal solution with sulfide deposit minerals and basalt in feeder zones is discussed.

  14. CHARACTERIZATION OF DWPF MELTER OFF-GAS QUENCHER AND STEAM ATOMIZED SCRUBBER DEPOSIT SAMPLES

    SciTech Connect (OSTI)

    Zeigler, K; Ned Bibler, N

    2007-06-06

    This report summarizes the results from the characterization of deposits from the inlets of the primary off-gas Quencher and Steam Atomized Scrubber (SAS) in the Defense Waste Processing Facility (DWPF), as requested by a technical assistance request. DWPF requested elemental analysis and compound identification to help determine the potential causes for the substance formation. This information will be fed into Savannah River National Laboratory modeling programs to determine if there is a way to decrease the formation of the deposits. The general approach to the characterization of these samples included x-ray diffraction (XRD), scanning electron microscopy (SEM), and chemical analysis. The following conclusions are drawn from the analytical results found in this report: (1) The deposits are not high level waste glass from the DWPF melt pool based on comparison of the compositions of deposits to the composition of a sample of glass taken from the pour stream of the melter during processing of Sludge Batch 3. (2) Chemical composition results suggest that the deposits are probably a combination of sludge and frit particles entrained in the off-gas. (3) Gamma emitters, such as Co-60, Cs-137, Eu-154, Am-241, and Am-243 were detected in both the Quencher and SAS samples with Cs-137 having the highest concentration of the gamma emitters. (4) No evidence existed for accumulation of fissile material (U-233, U-235, and Pu-239) relative to Fe in either deposit. (5) XRD results indicated both samples were primarily amorphorous and contained some crystals of the iron oxides, hematite and magnetite (Fe{sub 2}O{sub 3} and Fe(Fe{sub 2}O{sub 4})), along with sodium nitrate (NaNO{sub 3}). The other main crystalline compound in the SAS deposit was mercurous chloride. The main crystalline compound in the Quencher deposit was a uranium oxide compound. These are all sludge components. (6) SEM analysis of the Quencher deposit revealed crystalline uranium compounds within the sample. SEM analysis of the SAS sample could not be performed due to the presence of a significant concentration of Hg in the sample. (7) Essentially all the Na and the S in the off-gas samples were soluble in water. (8) The main soluble anion was NO{sub 3}{sup -} with SO{sub 4}{sup 2-} being second. (9) In contrast to the results for the off-gas deposits analyzed in 2003, soluble compounds of fluoride and chloride were detected; however, their concentrations in the Quencher and SAS deposits were less than one weight percent. (10) The results suggest that the S is primarily in the deposits as the sulfate anion.

  15. Fundamental studies of the mechanisms of slag deposit formation: Studies on initiation, growth and sintering in the formation of utility boiler deposits: Topical technical report

    SciTech Connect (OSTI)

    Tangsathitkulchai, M.; Austin, L.G.

    1986-03-01

    Three laboratory-scale devices were utilized to investigate the mechanisms of the initiation, growth and sintering process involved in the formation of boiler deposits. Sticking apparatus investigations were conducted to study deposit initiation by comparing the adhesion behavior of the ash drops on four types of steel-based heat exchanger materials under the conditions found in a utility boiler and an entrained slagging gasifier. In addition, the adhesion behavior of the ash drops on a reduced steel surface were investigated. All the ash drops studied in this investigation were produced from bituminous coals.

  16. Contamination due to memory effects in filtered vacuum arc plasma deposition systems

    SciTech Connect (OSTI)

    Martins, D.R.; Salvadori, M.C.; Verdonck, P.; Brown, I.G.

    2002-08-13

    Thin film synthesis by filtered vacuum arc plasma deposition is a widely used technique with a number of important emerging technological applications. A characteristic feature of the method is that during the deposition process not only is the substrate coated by the plasma, but the plasma gun itself and the magnetic field coil and/or vacuum vessel section constituting the macroparticle filter are also coated to some extent. If then the plasma gun cathode is changed to a new element, there can be a contamination of the subsequent film deposition by sputtering from various parts of the system of the previous coating species. We have experimentally explored this effect and compared our results with theoretical estimates of sputtering from the SRIM (Stopping and Range of Ions in Matter) code. We find film contamination of order 10-4 - 10-3, and the memory of the prior history of the deposition hardware can be relatively long-lasting.

  17. Niobium Thin Film Coating on a 500-MHz Copper Cavity by Plasma Deposition

    SciTech Connect (OSTI)

    Haipeng Wang; Genfa Wu; H. Phillips; Robert Rimmer; Anne-Marie Valente; Andy Wu

    2005-05-16

    A system using an Electron Cyclotron Resonance (ECR) plasma source for the deposition of a thin niobium film inside a copper cavity for superconducting accelerator applications has been designed and is being constructed. The system uses a 500-MHz copper cavity as both substrate and vacuum chamber. The ECR plasma will be created to produce direct niobium ion deposition. The central cylindrical grid is DC biased to control the deposition energy. This paper describes the design of several subcomponents including the vacuum chamber, RF supply, biasing grid and magnet coils. Operational parameters are compared between an operating sample deposition system and this system. Engineering work progress toward the first plasma creation will be reported here.

  18. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, Alan F.; Makowiecki, Daniel M.; Rambach, Glenn D.; Randich, Erik

    1999-01-01

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  19. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, Alan F.; Makowiecki, Daniel M.; Rambach, Glenn D.; Randich, Erik

    1998-01-01

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  20. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

    1998-05-19

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

  1. Evaluation of CALPUFF nitrogen deposition modeling in the Chesapeake Bay Watershed Area using NADP data

    SciTech Connect (OSTI)

    Garrison, M.; Mayes, P.; Sherwell, J.

    1998-12-31

    The CALMET/CALPUFF modeling system has been used to estimate nitrogen deposition in an area surrounding Baltimore and the northern portion of the Chesapeake Bay. Comprehensive NO{sub x} emissions inventories and meteorological data bases have been developed to conduct the modeling. This paper discusses the results of an evaluation of predicted nitrogen wet deposition rates compared to measured rates at two NADP/NTN sites in Maryland, Wye and White Rock. Underprediction of wet deposition rates is investigated through the use of sensitivity and diagnostic evaluations of model performance. A suggested change to the calculation of NO{sub x} transformation rates involving an alternative specification of minimum NO{sub x} concentrations was made to CALPUFF and the performance evaluation was re-done. Results of the new evaluation show significantly improved model performance, and therefore the modification is tentatively proposed for use in further applications of CALPUFF to the assessment of nitrogen deposition in the Chesapeake Bay watershed.

  2. Dendrite-Free Li Deposition Using Trace-Amounts of Water as an...

    Office of Scientific and Technical Information (OSTI)

    Using Trace-Amounts of Water as an Electrolyte Additive Citation Details In-Document Search Title: Dendrite-Free Li Deposition Using Trace-Amounts of Water as an Electrolyte ...

  3. Dendrite-Free Lithium Deposition with Self-Aligned Nanorod Structure...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    December 2, 2014, Research Highlights Dendrite-Free Lithium Deposition with Self-Aligned ... of dendrite-free lithium films with self-aligned and highly-compacted nanorod structure. ...

  4. Atomic oxygen flux determined by mixed-phase Ag/Ag2O deposition

    SciTech Connect (OSTI)

    Kaspar, Tiffany C.; Droubay, Timothy C.; Chambers, Scott A.

    2010-11-01

    The flux of atomic oxygen generated in a electron cyclotron resonance (ECR) microwave plasma source was quantified by two different methods. The commonly applied approach of monitoring the frequency change of a silver-coated quartz crystal microbalance (QCM) deposition rate monitor as the silver is oxidized was found to underestimate the atomic oxygen flux by an order of magnitude compared to a more direct deposition approach. In the mixed-phase Ag/Ag2O deposition method, silver films were deposited in the presence of the plasma such that the films were partially oxidized to Ag2O; x-ray photoelectron spectroscopy (XPS) was utilized for quantification of the oxidized fraction. The inaccuracy of the QCM oxidation method was tentatively attributed to efficient catalytic recombination of O atoms on the silver surface.

  5. A Study Of Scale Deposition- An Analogue Of Meso- To Epithermal...

    Open Energy Info (EERE)

    Study Of Scale Deposition- An Analogue Of Meso- To Epithermal Ore Formation In The Volcano Of Milos, Aegean Arc, Greece Jump to: navigation, search OpenEI Reference LibraryAdd to...

  6. The influence of deposits on palladium cathodes in D[sub 2]O electrolysis

    SciTech Connect (OSTI)

    Lihn, C.J.; Wan, C.C.; Wan, C.M.; Perng, T.P. )

    1993-11-01

    Platinum and silicon have been found deposited on the palladium cathode during the electrolysis of a 0.1 M LiOD solution with a platinum anode in a glass cell. Various techniques including surface analysis, cyclic voltammetry, and electrochemical permeation were used to study the surface deposits, electrochemical deuterium-sorption behavior, and permeation rate of deuterium into palladium, respectively. It was shown that palladium cathodes were contaminated by platinum and silicon deposits after a certain period of electrolysis. These deposits could affect the electrochemical processes during electrolysis. The contamination may be a cause of the sporadic results reported in [open quotes]cold fusion[close quotes] research. 18 refs., 15 figs.

  7. In situ method for recovering hydrocarbon from subterranean oil shale deposits

    SciTech Connect (OSTI)

    Friedman, R.H.

    1987-11-03

    This patent describes in situ method for recovering hydrocarbons from subterranean oil shale deposits, the deposits comprising mineral rock and kerogen, comprising (a) penetrating the oil shale deposit with at least one well; (b) forming a zone of fractured and/or rubbilized oil shale material adjacent the well by hydraulic or explosive fracturing; (c) introducing a hydrogen donor solvent including tetralin into the portion of the oil shale formation treated in step (b) in a volume sufficient to fill substantially all of the void space created by the fracturing and rubbilizing treatment; (d) applying hydrogen to the tetralin and maintaining a predetermined pressure for a predetermined period of time sufficient to cause disintegration of the oil shale material; (e) thereafter introducing an oxidative environment into the portion of the oil shale deposit (f) producing the solvent in organic fragments to the surface of the earth, and (g) separating the organic fragments from the solvent.

  8. Double-sided reel-to-reel metal-organic chemical vapor deposition...

    Office of Scientific and Technical Information (OSTI)

    chemical vapor deposition system of YBasub 2Cusub 3Osub 7- thin films Citation Details In-Document Search Title: Double-sided reel-to-reel metal-organic chemical vapor ...

  9. Geological and geochemical aspects of uranium deposits. A selected, annotated bibliography

    SciTech Connect (OSTI)

    Garland, P.A.; Thomas, J.M.; Brock, M.L.; Daniel, E.W.

    1980-06-01

    A bibliography of 479 references encompassing the fields of uranium and thorium geochemistry and mineralogy, geology of uranium deposits, uranium mining, and uranium exploration techniques has been compiled by the Ecological Sciences Information Center of Oak Ridge National Laboratory. The bibliography was produced for the National Uranium Resource Evaluation Program, which is funded by the Grand Junction Office of the Department of Energy. The references contained in the bibliography have been divided into the following eight subject categories: (1) geology of deposits, (2) geochemistry, (3) genesis O deposits, (4) exploration, (5) mineralogy, (6) uranium industry, (7) reserves and resources, and (8) geology of potential uranium-bearing areas. All categories specifically refer to uranium and thorium; the last category contains basic geologic information concerning areas which the Grand Junction Office feels are particularly favorable for uranium deposition. The references are indexed by author, geographic location, quadrangle name, geoformational feature, taxonomic name, and keyword.

  10. Niobium thin film coating on a 500-MHz copper cavity by plasma deposition

    SciTech Connect (OSTI)

    Haipeng Wang; Genfa Wu; H. Phillips; Robert Rimmer; Anne-Marie Valente; Andy Wu

    2005-05-16

    A system using an Electron Cyclotron Resonance (ECR) plasma source for the deposition of a thin niobium film inside a copper cavity for superconducting accelerator applications has been designed and is being constructed. The system uses a 500-MHz copper cavity as both substrate and vacuum chamber. The ECR plasma will be created to produce direct niobium ion deposition. The central cylindrical grid is DC biased to control the deposition energy. This paper describes the design of several subcomponents including the vacuum chamber, RF supply, biasing grid and magnet coils. Operational parameters are compared between an operating sample deposition system and this system. Engineering work progress toward the first plasma creation will be reported here.

  11. A new model for predicting the fouling deposit weight of coal

    SciTech Connect (OSTI)

    Yeakel, J.D. ); Finkelman, R.B. )

    1988-06-01

    One of the major problems associated with coal combustion is the buildup of sintered ash deposits in the convective passes of boilers. These deposits, referred to as fouling deposits, can drastically reduce heat transfer, cause erosion by channelizing gas flow, and contribute to the corrosion of exposed metal surfaces. Downtime for cleaning fouled commercial boilers can be a multi-million-dollar expense. Utility boilers generally are designed to burn coal that falls within a specific fouling behavior range. Therefore, to minimize the deleterious effects of boiler fouling and to maximize boiler efficiency, it is necessary to anticipate or assess the fouling characteristics of a coal prior to combustion. This paper introduces a new method for predicting fouling deposit weights by using commonly available coal quality data. The authors have developed a modified concept of the coal quality characteristics that influence fouling. This concept evolved from a review of the literature and from the statistical analysis of results from 44 combustion tests.

  12. Surface roughness and interface width scaling of magnetron sputter deposited Ni/Ti multilayers

    SciTech Connect (OSTI)

    Maidul Haque, S.; Biswas, A.; Tokas, R. B.; Bhattacharyya, D.; Sahoo, N. K.; Bhattacharya, Debarati

    2013-09-14

    Using an indigenously built r.f. magnetron sputtering system, several single layer Ti and Ni films have been deposited at varying deposition conditions. All the samples have been characterized by Grazing Incidence X-ray Reflectivity (GIXR) and Atomic Force Microscopy to estimate their thickness, density, and roughness and a power law dependence of the surface roughness on the film thickness has been established. Subsequently, at optimized deposition condition of Ti and Ni, four Ni/Ti multilayers of 11-layer, 21-layer, 31-layer, and 51-layer having different bilayer thickness have been deposited. The multilayer samples have been characterized by GIXR and neutron reflectivity measurements and the experimental data have been fitted assuming an appropriate sample structure. A power law correlation between the interface width and bilayer thickness has been observed for the multilayer samples, which was explained in the light of alternate roughening/smoothening of multilayers and assuming that at the interface the growth restarts every time.

  13. Age And Nature Of Deposits On The Submarine Flanks Of Piton De...

    Open Energy Info (EERE)

    Age And Nature Of Deposits On The Submarine Flanks Of Piton De La Fournaise (Reunion Island) Jump to: navigation, search OpenEI Reference LibraryAdd to library Journal Article: Age...

  14. OLEDWORKS DEVELOPS INNOVATIVE HIGH-PERFORMANCE DEPOSITION TECHNOLOGY TO REDUCE MANUFACTURING COST OF OLED LIGHTING

    Broader source: Energy.gov [DOE]

    The high manufacturing cost of OLED lighting is a major barrier to the growth of the emerging OLED lighting industry. OLEDWorks is developing high-performance deposition technology that addresses...

  15. Fracture properties of atomic layer deposited aluminum oxide free-standing membranes

    SciTech Connect (OSTI)

    Berdova, Maria Rontu, Ville; Franssila, Sami; Ylivaara, Oili M. E.; Puurunen, Riikka L.; Trm, Pekka T.

    2015-01-01

    The fracture strength of Al{sub 2}O{sub 3} membranes deposited by atomic layer deposition at 110, 150, 200, and 300?C was investigated. The fracture strength was found to be in the range of 2.253.00?GPa using Weibull statistics and nearly constant as a function of deposition temperature. This strength is superior to common microelectromechanical systems materials such as diamondlike carbon, SiO{sub 2}, or SiC. As-deposited membranes sustained high cycling pressure loads >10 bar/s without fracture. Films featured, however, significant reduction in the resistance to failure after annealing (800?C) or high humidity (95%, 60?C) treatments.

  16. RECOMMENDED TRITIUM OXIDE DEPOSITION VELOCITY FOR USE IN SAVANNAH RIVER SITE SAFETY ANALYSES

    SciTech Connect (OSTI)

    Lee, P.; Murphy, C.; Viner, B.; Hunter, C.; Jannik, T.

    2012-04-03

    The Defense Nuclear Facilities Safety Board (DNFSB) has recently questioned the appropriate value for tritium deposition velocity used in the MELCOR Accident Consequence Code System Ver. 2 (Chanin and Young 1998) code when estimating bounding dose (95th percentile) for safety analysis (DNFSB 2011). The purpose of this paper is to provide appropriate, defensible values of the tritium deposition velocity for use in Savannah River Site (SRS) safety analyses. To accomplish this, consideration must be given to the re-emission of tritium after deposition. Approximately 85% of the surface area of the SRS is forested. The majority of the forests are pine plantations, 68%. The remaining forest area is 6% mixed pine and hardwood and 26% swamp hardwood. Most of the path from potential release points to the site boundary is through forested land. A search of published studies indicate daylight, tritiated water (HTO) vapor deposition velocities in forest vegetation can range from 0.07 to 2.8 cm/s. Analysis of the results of studies done on an SRS pine plantation and climatological data from the SRS meteorological network indicate that the average deposition velocity during daylight periods is around 0.42 cm/s. The minimum deposition velocity was determined to be about 0.1 cm/s, which is the recommended bounding value. Deposition velocity and residence time (half-life) of HTO in vegetation are related by the leaf area and leaf water volume in the forest. For the characteristics of the pine plantation at SRS the residence time corresponding to the average, daylight deposition velocity is 0.4 hours. The residence time corresponding to the night-time deposition velocity of 0.1 cm/s is around 2 hours. A simple dispersion model which accounts for deposition and re-emission of HTO vapor was used to evaluate the impact on exposure to the maximally exposed offsite individual (MOI) at the SRS boundary (Viner 2012). Under conditions that produce the bounding, 95th percentile MOI exposure, i.e., low wind speed, weak turbulence, night, low deposition velocity, the effect of deposition and re-emission on MOI exposure was found to be very small. The exposure over the two hour period following arrival of the plume was found to be decreased by less than 0.05 %. Furthermore the sensitivity to deposition velocity was low. Increasing deposition velocity to 0.5 cm/s reduced exposure to 0.3 %. After a 24 hour period, an MOI would have been exposed to all of the released material. Based on the low sensitivity of MOI exposure to the value of deposition velocity when re-emission is considered, it is appropriately conservative to use a 0.0 cm/s effective deposition velocity for safety analysis in the MACCS2 code.

  17. Computer modeling of Y-Ba-Cu-O thin film deposition and growth

    SciTech Connect (OSTI)

    Burmester, C.; Gronsky, R. ); Wille, L. . Dept. of Physics)

    1991-07-01

    The deposition and growth of epitaxial thin films of YBa{sub 2}Cu{sub 3}O{sub 7} are modeled by means of Monte Carlo simulations of the deposition and diffusion of Y, Ba, and Cu oxide particles. This complements existing experimental characterization techniques to allow the study of kinetic phenomena expected to play a dominant role in the inherently non-equilibrium thin film deposition process. Surface morphologies and defect structures obtained in the simulated films are found to closely resemble those observed experimentally. A systematic study of the effects of deposition rate and substrate temperature during in-situ film fabrication reveals that the kinetics of film growth can readily dominate the structural formation of the thin film. 16 refs., 4 figs.

  18. Germanium films by polymer-assisted deposition (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Germanium films by polymer-assisted deposition Citation Details In-Document Search Title: Germanium films by polymer-assisted deposition Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first

  19. Multi-model Mean Nitrogen and Sulfur Deposition from the Atmospheric

    Office of Scientific and Technical Information (OSTI)

    Chemistry and Climate Model Intercomparison Project (ACCMIP): Evaluation of Historical and Projected Future Changes (Journal Article) | SciTech Connect Multi-model Mean Nitrogen and Sulfur Deposition from the Atmospheric Chemistry and Climate Model Intercomparison Project (ACCMIP): Evaluation of Historical and Projected Future Changes Citation Details In-Document Search Title: Multi-model Mean Nitrogen and Sulfur Deposition from the Atmospheric Chemistry and Climate Model Intercomparison

  20. Method of controllong the deposition of hydrogenated amorphous silicon and apparatus therefor

    DOE Patents [OSTI]

    Hanak, Joseph J. (Lawrenceville, NJ)

    1985-06-25

    An improved method and apparatus for the controlled deposition of a layer of hydrogenated amorphous silicon on a substrate. Means is provided for the illumination of the coated surface of the substrate and measurement of the resulting photovoltage at the outermost layer of the coating. Means is further provided for admixing amounts of p type and n type dopants to the reactant gas in response to the measured photovoltage to achieve a desired level and type of doping of the deposited layer.

  1. The impact of solution agglomeration on the deposition of self-assembled

    Office of Scientific and Technical Information (OSTI)

    monolayers (Journal Article) | SciTech Connect Journal Article: The impact of solution agglomeration on the deposition of self-assembled monolayers Citation Details In-Document Search Title: The impact of solution agglomeration on the deposition of self-assembled monolayers × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI

  2. An electroless approach to atomic layer deposition on noble metal powders.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Conference: An electroless approach to atomic layer deposition on noble metal powders. Citation Details In-Document Search Title: An electroless approach to atomic layer deposition on noble metal powders. Abstract not provided. Authors: Cappillino, Patrick ; Robinson, David ; Sugar, Joshua Daniel ; El Gabaly Marquez, Farid ; Cai, Trevor ; Liu, Zhi ; Stickney, John Publication Date: 2014-03-01 OSTI Identifier: 1140790 Report Number(s): SAND2014-2265C 505441 DOE

  3. Ozone-Based Atomic Layer Deposition of Crystalline V2O5Films for High

    Office of Scientific and Technical Information (OSTI)

    Performance Electrochemical Energy Storage (Journal Article) | SciTech Connect Ozone-Based Atomic Layer Deposition of Crystalline V2O5Films for High Performance Electrochemical Energy Storage Citation Details In-Document Search Title: Ozone-Based Atomic Layer Deposition of Crystalline V2O5Films for High Performance Electrochemical Energy Storage Authors: Chen, Xinyi ; Pomerantseva, Ekaterina ; Banerjee, P ; Gregorczyk, Keith ; Ghodssi, Reza ; Rubloff, Gary W Publication Date: 2012-04-10 OSTI

  4. Polycrystalline TiO2(B) Nanosheet Films Deposited via Langmuir-Blodgett

    Office of Scientific and Technical Information (OSTI)

    Method. (Conference) | SciTech Connect Polycrystalline TiO2(B) Nanosheet Films Deposited via Langmuir-Blodgett Method. Citation Details In-Document Search Title: Polycrystalline TiO2(B) Nanosheet Films Deposited via Langmuir-Blodgett Method. Abstract not provided. Authors: Biedermann, Laura ; Kotula, Paul Gabriel ; Beechem Iii, Thomas Edwin ; Chan, Calvin ; Dylla, Anthony ; Stevenson, Keith Publication Date: 2014-03-01 OSTI Identifier: 1140906 Report Number(s): SAND2014-1720C 505110 DOE

  5. Polymer-assisted deposition of films and preparation of carbon nanotube

    Office of Scientific and Technical Information (OSTI)

    arrays using the films (Patent) | SciTech Connect Polymer-assisted deposition of films and preparation of carbon nanotube arrays using the films Citation Details In-Document Search Title: Polymer-assisted deposition of films and preparation of carbon nanotube arrays using the films Carbon nanotubes were prepared by coating a substrate with a coating solution including a suitable solvent, a soluble polymer, a metal precursor having a first metal selected from iron, nickel, cobalt, and

  6. Proof-of-principle of high-fidelity coupled CRUD deposition and cycle

    Office of Scientific and Technical Information (OSTI)

    depletion simulation (Journal Article) | SciTech Connect Proof-of-principle of high-fidelity coupled CRUD deposition and cycle depletion simulation Citation Details In-Document Search This content will become publicly available on August 30, 2017 Title: Proof-of-principle of high-fidelity coupled CRUD deposition and cycle depletion simulation Authors: Walter, Daniel J. ; Kendrick, Brian K. ; Petrov, Victor ; Manera, Annalisa ; Collins, Benjamin ; Downar, Thomas Publication Date: 2015-11-01

  7. Atomic-Layer Deposition on Noble Metal Powders. (Conference) | SciTech

    Office of Scientific and Technical Information (OSTI)

    Connect Atomic-Layer Deposition on Noble Metal Powders. Citation Details In-Document Search Title: Atomic-Layer Deposition on Noble Metal Powders. Abstract not provided. Authors: Robinson, David ; Cappillino, Patrick. ; Salloum, Maher N. ; Sugar, Joshua Daniel ; El Gabaly Marquez, Farid ; Sheridan, Leah B. ; Jagannathan, Kaushik ; Benson, David M. ; Stickney, John L. Publication Date: 2014-10-01 OSTI Identifier: 1241747 Report Number(s): SAND2014-18364PE 537921 DOE Contract Number:

  8. Dendrite-free Li deposition using trace-amounts of water as an electrolyte

    Office of Scientific and Technical Information (OSTI)

    additive (Journal Article) | SciTech Connect Dendrite-free Li deposition using trace-amounts of water as an electrolyte additive Citation Details In-Document Search This content will become publicly available on May 13, 2017 Title: Dendrite-free Li deposition using trace-amounts of water as an electrolyte additive Authors: Qian, Jiangfeng ; Xu, Wu ; Bhattacharya, Priyanka ; Engelhard, Mark ; Henderson, Wesley A. ; Zhang, Yaohui ; Zhang, Ji-Guang Publication Date: 2015-07-01 OSTI Identifier:

  9. ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N.

    2009-11-03

    The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

  10. Dendrite-Free Li Deposition Using Trace-Amounts of Water as an Electrolyte

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Additive - Joint Center for Energy Storage Research April 25, 2015, Research Highlights Dendrite-Free Li Deposition Using Trace-Amounts of Water as an Electrolyte Additive Dendrite growth leads to low CE and safety issues of Li anode. Trace amount of water enables dendrite-free Li deposition. Scientific Achievement Residual water (H2O) present in nonaqueous electrolytes has been widely regarded as a detrimental factor for lithium (Li) batteries. However, dendrite-free Li film can be obtained

  11. Underpotential Deposition-Mediated Layer-by-Layer Growth of Thin Films -

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy Innovation Portal Startup America Startup America Hydrogen and Fuel Cell Hydrogen and Fuel Cell Find More Like This Return to Search Underpotential Deposition-Mediated Layer-by-Layer Growth of Thin Films Brookhaven National Laboratory Contact BNL About This Technology Publications: PDF Document Publication Overpotential deposition of Ag monolayer and bilayer on Au( 1 1 1) mediated by Pb adlayer (236 KB) <p> Increase in catalytic activity for the oxygen reduction reaction (ORR)

  12. Linking deposit morphology and clogging in subsurface remediation: Final Technical Report

    SciTech Connect (OSTI)

    Mays, David C.

    2013-12-11

    Groundwater is a crucial resource for water supply, especially in arid and semiarid areas of the United States west of the 100th meridian. Accordingly, remediation of contaminated groundwater is an important application of science and technology, particularly for the U.S. Department of Energy (DOE), which oversees a number of groundwater remediation sites from Cold War era mining. Groundwater remediation is complex, because it depends on identifying, locating, and treating contaminants in the subsurface, where remediation reactions depend on interacting geological, hydrological, geochemical, and microbiological factors. Within this context, permeability is a fundamental concept, because it controls the rates and pathways of groundwater flow. Colloid science is intimately related to permeability, because when colloids are present (particles with equivalent diameters between 1 nanometer and 10 micrometers), changes in hydrological or geochemical conditions can trigger a detrimental reduction in permeability called clogging. Accordingly, clogging is a major concern in groundwater remediation. Several lines of evidence suggest that clogging by colloids depends on (1) colloid deposition, and (2) deposit morphology, that is, the structure of colloid deposits, which can be quantified as a fractal dimension. This report describes research, performed under a 2-year, exploratory grant from the DOE’s Subsurface Biogeochemical Research (SBR) program. This research employed a novel laboratory technique to simultaneously measure flow, colloid deposition, deposit morphology, and permeability in a flow cell, and also collected field samples from wells at the DOE’s Old Rifle remediation site. Field results indicate that suspended solids at the Old Rifle site have fractal structures. Laboratory results indicate that clogging is associated with colloid deposits with smaller fractal dimensions, in accordance with previous studies on initially clean granular media. Preliminary modeling has identified the deposit radius of gyration as a candidate variable to account for clogging as a function of (1) colloid accumulation and (2) deposit morphology.

  13. Sealable stagnation flow geometries for the uniform deposition of materials and heat

    DOE Patents [OSTI]

    McCarty, Kevin F. (Livermore, CA); Kee, Robert J. (Livermore, CA); Lutz, Andrew E. (Alamo, CA); Meeks, Ellen (Livermore, CA)

    2001-01-01

    The present invention employs a constrained stagnation flow geometry apparatus to achieve the uniform deposition of materials or heat. The present invention maximizes uniform fluxes of reactant gases to flat surfaces while minimizing the use of reagents and finite dimension edge effects. This results, among other things, in large area continuous films that are uniform in thickness, composition and structure which is important in chemical vapor deposition processes such as would be used for the fabrication of semiconductors.

  14. Laser energy deposition and its dynamic uniformity for direct-drive capsules

    SciTech Connect (OSTI)

    Xu, Yan; Wu, SiZhong; Zheng, WuDi

    2015-04-15

    The total laser energy deposition of multi-laser-beam irradiation is not only associated with the dynamic behavior of capsule but also the time-dependent angular distribution of the energy deposition of each beam around its axis. The dynamic behavior of laser energy deposition does not linearly respond to the dynamic behavior of laser irradiation. The laser energy deposition uniformity determines the symmetry of implosion. The dynamic behavior of laser energy deposition non-uniformity in OMEGA for laser with square beam shape intensity profile is investigated. In the case of smaller laser spot, the initial non-uniformity caused by laser beam overlap is very high. The shell asymmetry caused by the high initial laser irradiation non-uniformity is estimated by the extent of distortion of shock front which is not as severe as expected before the shock driven by main pulse arrives. This suggests that the large initial non-uniformity due to smaller laser spot is one of the elements that seed disturbance before the main pulse. The rms of laser energy deposition during the main pulse remains above 2%. Since the intensity of main driving pulse usually is several times higher than that of picket pulses, the non-uniformity in main pulse period may jeopardize the symmetrical implosion. When dynamic behavior of capsule is considered, the influence of beam pointing error, the target positioning error, and beam-to-beam power unbalance is quite different for the case of static capsule.

  15. Al{sub 2}O{sub 3} multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition

    SciTech Connect (OSTI)

    Jung, Hyunsoo [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Samsung Display Co. Ltd., Tangjeong, Chungcheongnam-Do 336-741 (Korea, Republic of); Jeon, Heeyoung [Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Choi, Hagyoung; Ham, Giyul; Shin, Seokyoon [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Jeon, Hyeongtag, E-mail: hjeon@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2014-02-21

    Al{sub 2}O{sub 3} films deposited by remote plasma atomic layer deposition have been used for thin film encapsulation of organic light emitting diode. In this study, a multi-density layer structure consisting of two Al{sub 2}O{sub 3} layers with different densities are deposited with different deposition conditions of O{sub 2} plasma reactant time. This structure improves moisture permeation barrier characteristics, as confirmed by a water vapor transmission rate (WVTR) test. The lowest WVTR of the multi-density layer structure was 4.7 10{sup ?5} gm{sup ?2} day{sup ?1}, which is one order of magnitude less than WVTR for the reference single-density Al{sub 2}O{sub 3} layer. This improvement is attributed to the location mismatch of paths for atmospheric gases, such as O{sub 2} and H{sub 2}O, in the film due to different densities in the layers. This mechanism is analyzed by high resolution transmission electron microscopy, elastic recoil detection, and angle resolved X-ray photoelectron spectroscopy. These results confirmed that the multi-density layer structure exhibits very good characteristics as an encapsulation layer via location mismatch of paths for H{sub 2}O and O{sub 2} between the two layers.

  16. Method of monitoring photoactive organic molecules in-situ during gas-phase deposition of the photoactive organic molecules

    DOE Patents [OSTI]

    Forrest, Stephen R.; Vartanian, Garen; Rolin, Cedric

    2015-06-23

    A method for in-situ monitoring of gas-phase photoactive organic molecules in real time while depositing a film of the photoactive organic molecules on a substrate in a processing chamber for depositing the film includes irradiating the gas-phase photoactive organic molecules in the processing chamber with a radiation from a radiation source in-situ while depositing the film of the one or more organic materials and measuring the intensity of the resulting photoluminescence emission from the organic material. One or more processing parameters associated with the deposition process can be determined from the photoluminescence intensity data in real time providing useful feedback on the deposition process.

  17. Optical characteristics of nanocrystalline Al{sub x}Ga{sub 1?x}N thin films deposited by hollow cathode plasma-assisted atomic layer deposition

    SciTech Connect (OSTI)

    Goldenberg, Eda; Ozgit-Akgun, Cagla; Biyikli, Necmi; Kemal Okyay, Ali

    2014-05-15

    Gallium nitride (GaN), aluminum nitride (AlN), and Al{sub x}Ga{sub 1?x}N films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200?C on c-plane sapphire and Si substrates. The dependence of film structure, absorption edge, and refractive index on postdeposition annealing were examined by x-ray diffraction, spectrophotometry, and spectroscopic ellipsometry measurements, respectively. Well-adhered, uniform, and polycrystalline wurtzite (hexagonal) GaN, AlN, and Al{sub x}Ga{sub 1?x}N films were prepared at low deposition temperature. As revealed by the x-ray diffraction analyses, crystallite sizes of the films were between 11.7 and 25.2?nm. The crystallite size of as-deposited GaN film increased from 11.7 to 12.1 and 14.4?nm when the annealing duration increased from 30?min to 2?h (800?C). For all films, the average optical transmission was ?85% in the visible (VIS) and near infrared spectrum. The refractive indices of AlN and Al{sub x}Ga{sub 1?x}N were lower compared to GaN thin films. The refractive index of as-deposited films decreased from 2.33 to 2.02 (??=?550?nm) with the increased Al content x (0???x???1), while the extinction coefficients (k) were approximately zero in the VIS spectrum (>400?nm). Postdeposition annealing at 900?C for 2?h considerably lowered the refractive index value of GaN films (2.331.92), indicating a significant phase change. The optical bandgap of as-deposited GaN film was found to be 3.95?eV, and it decreased to 3.90?eV for films annealed at 800?C for 30?min and 2?h. On the other hand, this value increased to 4.1?eV for GaN films annealed at 900?C for 2?h. This might be caused by Ga{sub 2}O{sub 3} formation and following phase change. The optical bandgap value of as-deposited Al{sub x}Ga{sub 1?x}N films decreased from 5.75 to 5.25?eV when the x values decreased from 1 to 0.68. Furthermore, postdeposition annealing did not affect the bandgap of Al-rich films.

  18. Aerial photographic interpretation of lineaments and faults in late cenozoic deposits in the Eastern part of the Benton Range 1:100,000 quadrangle and the Goldfield, Last Chance Range, Beatty, and Death Valley Junction 1:100,000 quadrangles, Nevada and California

    SciTech Connect (OSTI)

    Reheis, M.C.; Noller, J.S.

    1991-09-01

    Lineaments and faults in Quaternary and late Tertiary deposits in the southern part of the Walker Lane are potentially active and form patterns that are anomalous with respect to the typical fault patterns in most of the Great Basin. Little work has been done to identify and characterize these faults, with the exception of those in the Death Valley-Furnace Creek (DVFCFZ) fault system and those in and near the Nevada Test Site. Four maps at a scale of 1:100,000 summarize the existing knowledge about these lineaments and faults based on extensive aerial-photo interpretation, limited field investigations, and published geologic maps. The lineaments and faults in all four maps can be divided geographically into two groups. The first group includes west- to north-trending lineaments and faults associated with the DVFCFZ and with the Pahrump fault zone in the Death Valley Junction quadrangle. The second group consists of north- to east-northeast-trending lineaments and faults in a broad area that lies east of the DVFCFZ and north of the Pahrump fault zone. Preliminary observations of the orientations and sense of slip of the lineaments and faults suggest that the least principle stress direction is west-east in the area of the first group and northwest-southeast in the area of the second group. The DVFCFZ appears to be part of a regional right-lateral strike-slip system. The DVFCFZ steps right, accompanied by normal faulting in an extensional zone, to the northern part of the Walker Lane a the northern end of Fish Lake Valley (Goldfield quadrangle), and appears to step left, accompanied by faulting and folding in a compressional zone, to the Pahrump fault zone in the area of Ash Meadows (Death Valley Junction quadrangle). 25 refs.

  19. Nanoscale compositional analysis of NiTi shape memory alloy films deposited by DC magnetron sputtering

    SciTech Connect (OSTI)

    Sharma, S. K.; Mohan, S.; Bysakh, S.; Kumar, A.; Kamat, S. V.

    2013-11-15

    The formation of surface oxide layer as well as compositional changes along the thickness for NiTi shape memory alloy thin films deposited by direct current magnetron sputtering at substrate temperature of 300 °C in the as-deposited condition as well as in the postannealed (at 600 °C) condition have been thoroughly studied by using secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, and scanning transmission electron microscopy-energy dispersive x-ray spectroscopy techniques. Formation of titanium oxide (predominantly titanium dioxide) layer was observed in both as-deposited and postannealed NiTi films, although the oxide layer was much thinner (8 nm) in as-deposited condition. The depletion of Ti and enrichment of Ni below the oxide layer in postannealed films also resulted in the formation of a graded microstructure consisting of titanium oxide, Ni{sub 3}Ti, and B2 NiTi. A uniform composition of B2 NiTi was obtained in the postannealed film only below a depth of 200–250 nm from the surface. Postannealed film also exhibited formation of a ternary silicide (Ni{sub x}Ti{sub y}Si) at the film–substrate interface, whereas no silicide was seen in the as-deposited film. The formation of silicide also caused a depletion of Ni in the film in a region ∼250–300 nm just above the film substrate interface.

  20. Unusual behavior in magnesium-copper cluster matter produced by helium droplet mediated deposition

    SciTech Connect (OSTI)

    Emery, S. B. Little, B. K.; Xin, Y.; Ridge, C. J.; Lindsay, C. M.; Buszek, R. J.; Boatz, J. A.; Boyle, J. M.

    2015-02-28

    We demonstrate the ability to produce core-shell nanoclusters of materials that typically undergo intermetallic reactions using helium droplet mediated deposition. Composite structures of magnesium and copper were produced by sequential condensation of metal vapors inside the 0.4 K helium droplet baths and then gently deposited onto a substrate for analysis. Upon deposition, the individual clusters, with diameters ∼5 nm, form a cluster material which was subsequently characterized using scanning and transmission electron microscopies. Results of this analysis reveal the following about the deposited cluster material: it is in the un-alloyed chemical state, it maintains a stable core-shell 5 nm structure at sub-monolayer quantities, and it aggregates into unreacted structures of ∼75 nm during further deposition. Surprisingly, high angle annular dark field scanning transmission electron microscopy images revealed that the copper appears to displace the magnesium at the core of the composite cluster despite magnesium being the initially condensed species within the droplet. This phenomenon was studied further using preliminary density functional theory which revealed that copper atoms, when added sequentially to magnesium clusters, penetrate into the magnesium cores.