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Sample records for quantum hall effect

  1. Second Generation Fractional Quantum Hall Effect

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Generation Fractional Quantum Hall Effect - Sandia Energy Energy Search Icon Sandia Home ... Second Generation Fractional Quantum Hall Effect HomeHighlights - Energy Research...

  2. Unconventional Quantum Hall Effect and Tunable Spin Hall Effect...

    Office of Scientific and Technical Information (OSTI)

    to an Isolated MoS2 Trilayer Title: Unconventional Quantum Hall Effect and Tunable Spin Hall Effect in Dirac Materials: Application to an Isolated MoS2 Trilayer Authors: Li, ...

  3. Quantum Hall effects in a Weyl semimetal: Possible application...

    Office of Scientific and Technical Information (OSTI)

    Quantum Hall effects in a Weyl semimetal: Possible application in pyrochlore iridates Title: Quantum Hall effects in a Weyl semimetal: Possible application in pyrochlore iridates ...

  4. Microscopic theory of quantum anomalous Hall effect in graphene...

    Office of Scientific and Technical Information (OSTI)

    Microscopic theory of quantum anomalous Hall effect in graphene Citation Details In-Document Search Title: Microscopic theory of quantum anomalous Hall effect in graphene Authors: ...

  5. The quantum Hall effect helicity

    SciTech Connect (OSTI)

    Shrivastava, Keshav N.

    2015-04-16

    The quantum Hall effect in semiconductor heterostructures is explained by two signs in the angular momentum j=l±s and g=(2j+1)/(2l+1) along with the Landau factor (n+1/2). These modifications in the existing theories explain all of the fractional charges. The helicity which is the sign of the product of the linear momentum with the spin p.s plays an important role for the understanding of the data at high magnetic fields. In particular it is found that particles with positive sign in the spin move in one direction and those with negative sign move in another direction which explains the up and down stream motion of the particles.

  6. Robert B. Laughlin and the Fractional Quantum Hall Effect

    Office of Scientific and Technical Information (OSTI)

    In 1983, Laughlin, then at the Lawrence Livermore National Laboratory, provided the ... quantum Hall effect.'1 ' "My presence at Livermore was crucial to my work," says Laughlin. ...

  7. Robert B. Laughlin and the Fractional Quantum Hall Effect

    Office of Scientific and Technical Information (OSTI)

    Robert B. Laughlin and the Fractional Quantum Hall Effect Resources with Additional Information Robert B. Laughlin Photo Courtesy of LLNL Robert B. Laughlin shared the 1998 Nobel...

  8. Non-abelian fractional quantum hall effect for fault-resistant...

    Office of Scientific and Technical Information (OSTI)

    Non-abelian fractional quantum hall effect for fault-resistant topological quantum computation. Citation Details In-Document Search Title: Non-abelian fractional quantum hall...

  9. Fractional Quantum Hall Effect at Landau Level Filling v=4/11...

    Office of Scientific and Technical Information (OSTI)

    Fractional Quantum Hall Effect at Landau Level Filling v411. Citation Details In-Document Search Title: Fractional Quantum Hall Effect at Landau Level Filling v411. Abstract...

  10. Quantum Anomalous Hall Effect in Hg_1-yMn_yTe Quantum Wells

    SciTech Connect (OSTI)

    Liu, Chao-Xing; Qi, Xiao-Liang; Dai, Xi; Fang, Zhong; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-03-19

    The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg{sub 1-y}Mn{sub y}Te quantum wells, without the external magnetic field and the associated Landau levels. This effect arises purely from the spin polarization of the Mn atoms, and the quantized Hall conductance is predicted for a range of quantum well thickness and the concentration of the Mn atoms. This effect enables dissipationless charge current in spintronics devices.

  11. Quantum anomalous Hall effect in single-layer and bilayer graphene...

    Office of Scientific and Technical Information (OSTI)

    Quantum anomalous Hall effect in single-layer and bilayer graphene Citation Details In-Document Search Title: Quantum anomalous Hall effect in single-layer and bilayer graphene ...

  12. Quantum Hall effect in semiconductor systems with quantum dots and antidots

    SciTech Connect (OSTI)

    Beltukov, Ya. M.; Greshnov, A. A.

    2015-04-15

    The integer quantum Hall effect in systems of semiconductor quantum dots and antidots is studied theoretically as a factor of temperature. It is established that the conditions for carrier localization in quantum-dot systems favor the observation of the quantum Hall effect at higher temperatures than in quantum-well systems. The obtained numerical results show that the fundamental plateau corresponding to the transition between the ground and first excited Landau levels can be retained up to a temperature of T ∼ 50 K, which is an order of magnitude higher than in the case of quantum wells. Implementation of the quantum Hall effect at such temperatures requires quantum-dot systems with controllable characteristics, including the optimal size and concentration and moderate geometrical and composition fluctuations. In addition, ordered arrangement is desirable, hence quantum antidots are preferable.

  13. Quantum anomalous Hall effect in topological insulator memory

    SciTech Connect (OSTI)

    Jalil, Mansoor B. A.; Tan, S. G.; Siu, Z. B.

    2015-05-07

    We theoretically investigate the quantum anomalous Hall effect (QAHE) in a magnetically coupled three-dimensional-topological insulator (3D-TI) system. We apply the generalized spin-orbit coupling Hamiltonian to obtain the Hall conductivity σ{sup xy} of the system. The underlying topology of the QAHE phenomenon is then analyzed to show the quantization of σ{sup xy} and its relation to the Berry phase of the system. Finally, we analyze the feasibility of utilizing σ{sup xy} as a memory read-out in a 3D-TI based memory at finite temperatures, with comparison to known magnetically doped 3D-TIs.

  14. Quantum Hall effect in graphene decorated with disordered multilayer patches

    SciTech Connect (OSTI)

    Nam, Youngwoo; Sun, Jie Lindvall, Niclas; Kireev, Dmitry; Yurgens, August; Jae Yang, Seung; Rae Park, Chong; Woo Park, Yung

    2013-12-02

    Quantum Hall effect (QHE) is observed in graphene grown by chemical vapour deposition using platinum catalyst. The QHE is even seen in samples which are irregularly decorated with disordered multilayer graphene patches and have very low mobility (<500 cm{sup 2}V{sup −1}s{sup −1}). The effect does not seem to depend on electronic mobility and uniformity of the resulting material, which indicates the robustness of QHE in graphene.

  15. Fractionally charged skyrmions in fractional quantum Hall effect

    SciTech Connect (OSTI)

    Balram, Ajit C.; Wurstbauer, U.; Wójs, A.; Pinczuk, A.; Jain, J. K.

    2015-11-26

    The fractional quantum Hall effect has inspired searches for exotic emergent topological particles, such as fractionally charged excitations, composite fermions, abelian and nonabelian anyons and Majorana fermions. Fractionally charged skyrmions, which support both topological charge and topological vortex-like spin structure, have also been predicted to occur in the vicinity of 1/3 filling of the lowest Landau level. The fractional skyrmions, however, are anticipated to be exceedingly fragile, suppressed by very small Zeeman energies. Here we show that, slightly away from 1/3 filling, the smallest manifestations of the fractional skyrmion exist in the excitation spectrum for a broad range of Zeeman energies, and appear in resonant inelastic light scattering experiments as well-defined resonances slightly below the long wavelength spin wave mode. The spectroscopy of these exotic bound states serves as a sensitive tool for investigating the residual interaction between composite fermions, responsible for delicate new fractional quantum Hall states in this filling factor region.

  16. Hall effect in quantum critical charge-cluster glass

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bozovic, Ivan; Wu, Jie; Bollinger, Anthony T.; Sun, Yujie

    2016-04-04

    Upon doping, cuprates undergo a quantum phase transition from an insulator to a d-wave superconductor. The nature of this transition and of the insulating state is vividly debated. Here, we study the Hall effect in La2-xSrxCuO4 (LSCO) samples doped near the quantum critical point at x ≈ 0.06. Dramatic fluctuations in the Hall resistance appear below TCG ≈ 1.5 K and increase as the sample is cooled down further, signaling quantum critical behavior. We explore the doping dependence of this effect in detail, by studying a combinatorial LSCO library in which the Sr content is varied in extremely fine steps,more » Δx ≈ 0.00008. Furthermore, we observe that quantum charge fluctuations wash out when superconductivity emerges but can be restored when the latter is suppressed by applying a magnetic field, showing that the two instabilities compete for the ground state.« less

  17. PREPRINT QUASIPARTICLE AGGREGATION I N THE FRACTIONAL QUANTUM HALL EFFECT

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    91618 PREPRINT QUASIPARTICLE AGGREGATION I N THE FRACTIONAL QUANTUM HALL EFFECT R. B. Laughlin This paper was prepared for submittal to the Proceedings of the 17th International Conference on the Physics of Semi conductors San Francisco, California August 6-10, 1984 October 10, 1984 This is a preprint of a paper intended for publication in a journal or proceedings. Since changes may be made before publication, this preprint is made available with the un- derstanding that it will not be cited or

  18. Vortex equations governing the fractional quantum Hall effect

    SciTech Connect (OSTI)

    Medina, Luciano

    2015-09-15

    An existence theory is established for a coupled non-linear elliptic system, known as “vortex equations,” describing the fractional quantum Hall effect in 2-dimensional double-layered electron systems. Via variational methods, we prove the existence and uniqueness of multiple vortices over a doubly periodic domain and the full plane. In the doubly periodic situation, explicit sufficient and necessary conditions are obtained that relate the size of the domain and the vortex numbers. For the full plane case, existence is established for all finite-energy solutions and exponential decay estimates are proved. Quantization phenomena of the magnetic flux are found in both cases.

  19. Fractionally charged skyrmions in fractional quantum Hall effect

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Balram, Ajit C.; Wurstbauer, U.; Wójs, A.; Pinczuk, A.; Jain, J. K.

    2015-11-26

    The fractional quantum Hall effect has inspired searches for exotic emergent topological particles, such as fractionally charged excitations, composite fermions, abelian and nonabelian anyons and Majorana fermions. Fractionally charged skyrmions, which support both topological charge and topological vortex-like spin structure, have also been predicted to occur in the vicinity of 1/3 filling of the lowest Landau level. The fractional skyrmions, however, are anticipated to be exceedingly fragile, suppressed by very small Zeeman energies. Here we show that, slightly away from 1/3 filling, the smallest manifestations of the fractional skyrmion exist in the excitation spectrum for a broad range of Zeemanmore » energies, and appear in resonant inelastic light scattering experiments as well-defined resonances slightly below the long wavelength spin wave mode. The spectroscopy of these exotic bound states serves as a sensitive tool for investigating the residual interaction between composite fermions, responsible for delicate new fractional quantum Hall states in this filling factor region.« less

  20. Quantum corrections to conductivity under conditions of the integer quantum Hall effect

    SciTech Connect (OSTI)

    Greshnov, A. A.

    2012-06-15

    Quantum corrections to the conductivity of a two-dimensional electron gas under conditions of the integer quantum Hall effect have been studied. It is shown that violation of the one-parameter scaling under conditions of quantizing magnetic fields, {omega}{sub c}{tau} Much-Greater-Than 1, occurs at a level of the perturbation theory. The results of diagrammatic calculation of the quantum correction are in agreement with the numerical dependences of the peaks in the longitudinal conductivity on the effective size of the sample, in contrast to earlier calculations based on the unitary nonlinear {sigma}-model. Due to this, consideration of Landau quantization represents a criterion for correct description of the quantum Hall effect.

  1. Topological Hubbard Model and Its High-Temperature Quantum Hall...

    Office of Scientific and Technical Information (OSTI)

    Topological Hubbard Model and Its High-Temperature Quantum Hall Effect Title: Topological Hubbard Model and Its High-Temperature Quantum Hall Effect Authors: Neupert, Titus ; ...

  2. Engineering the quantum anomalous Hall effect in graphene with uniaxial strains

    SciTech Connect (OSTI)

    Diniz, G. S. Guassi, M. R.; Qu, F.

    2013-12-28

    We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of Rashba spin-orbit coupling and exchange field, for vanishing intrinsic spin-orbit coupling, possesses non-trivial topological phase, which is robust against the direction and modulus of the strain. Besides, we also find that the interplay between Rashba and intrinsic spin-orbit couplings results in a topological phase transition in the strained graphene. Remarkably, as the strain strength is increased beyond approximately 7%, the critical parameters of the exchange field for triggering the quantum anomalous Hall phase transition show distinct behaviors—decrease (increase) for strains along zigzag (armchair) direction. Our findings open up a new platform for manipulation of the QAHE by an experimentally accessible strain deformation of the graphene structure, with promising application on novel quantum electronic devices with high efficiency.

  3. A novel method of including Landau level mixing in numerical studies of the quantum Hall effect

    SciTech Connect (OSTI)

    Wooten, Rachel; Quinn, John; Macek, Joseph

    2013-12-04

    Landau level mixing should influence the quantum Hall effect for all except the strongest applied magnetic fields. We propose a simple method for examining the effects of Landau level mixing by incorporating multiple Landau levels into the Haldane pseudopotentials through exact numerical diagonalization. Some of the resulting pseudopotentials for the lowest and first excited Landau levels will be presented.

  4. Fractional quantum Hall effect at Landau level filling ν = 4/11

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

    2015-01-09

    In this study, we report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at ν = 3/8 and 5/13.

  5. Fractional quantum Hall effect at Landau level filling ν = 4/11

    SciTech Connect (OSTI)

    Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

    2015-01-09

    In this study, we report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at ν = 3/8 and 5/13.

  6. Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum

    SciTech Connect (OSTI)

    Arapov, Yu. G.; Gudina, S. V.; Neverov, V. N.; Podgornykh, S. M.; Popov, M. R. Harus, G. I.; Shelushinina, N. G.; Yakunin, M. V.; Mikhailov, N. N.; Dvoretsky, S. A.

    2015-12-15

    The longitudinal and Hall magnetoresistances of HgTe/HgCdTe heterostructures with an inverted energy spectrum (the HgTe quantum well width is d = 20.3 nm) are measured in the quantum-Hall-effect regime at T = 2–50 K in magnetic fields up to B = 9 T. Analysis of the temperature dependences of conductivity in the transition region between the first and second plateaus of the quantum Hall effect shows the feasibility of the scaling regime for a plateau–plateau quantum phase transition in 2D-structures on the basis of mercury telluride.

  7. Hall effect in quantum critical charge-cluster glass (Journal...

    Office of Scientific and Technical Information (OSTI)

    Upon doping, cuprates undergo a quantum phase transition from an insulator to a d-wave superconductor. The nature of this transition and of the insulating state is vividly debated. ...

  8. Phase transitions in quantum Hall multiple layer systems

    SciTech Connect (OSTI)

    Pusep, Yu A.; Fernandes dos Santos, L.; Smirnov, D.; Bakarov, A. K.; Toropov, A. I.

    2013-12-04

    Polarized photoluminescence from multiple well electron systems was studied in the regime of the integer quantum Hall effect. Two quantum Hall ferromagnetic ground states assigned to the uncorrelated miniband quantum Hall state and to the spontaneous interwell phase coherent dimer quantum Hall state were observed. The photoluminescence associated with these states exhibits features caused by finite-size skyrmions. The depolarization of the ferromagnetic ground state was observed in bilayer system.

  9. Quantum Hall effect in HgTe quantum wells at nitrogen temperatures

    SciTech Connect (OSTI)

    Kozlov, D. A. Kvon, Z. D.; Mikhailov, N. N.; Dvoretskii, S. A.; Weishäupl, S.; Krupko, Y.; Portal, J.-C.

    2014-09-29

    We report on the observation of quantized Hall plateaus in a system of two-dimensional Dirac fermions, implemented in a 6.6 nm HgTe quantum well at magnetic fields up to 34 T at nitrogen temperatures. The activation energies determined from the temperature dependence of the longitudinal resistivity are found to be almost equal for the filling factors ν of 1 and 2. This indicates that the large values of the g-factor (about 30–40) remain unchanged at very strong magnetic fields.

  10. Field effect in the quantum Hall regime of a high mobility graphene wire

    SciTech Connect (OSTI)

    Barraud, C., E-mail: cbarraud@phys.ethz.ch, E-mail: clement.barraud@univ-paris-diderot.fr; Choi, T.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zrich, CH-8093 Zrich (Switzerland); Butti, P.; Shorubalko, I. [Swiss Federal Laboratories of Materials Science and Technologies, EMPA Elect. Metrol. Reliabil. Lab., CH-8600 Dbendorf (Switzerland); Taniguchi, T.; Watanabe, K. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2014-08-21

    In graphene-based electronic devices like in transistors, the field effect applied thanks to a gate electrode allows tuning the charge density in the graphene layer and passing continuously from the electron to the hole doped regime across the Dirac point. Homogeneous doping is crucial to understand electrical measurements and for the operation of future graphene-based electronic devices. However, recently theoretical and experimental studies highlighted the role of the electrostatic edge due to fringing electrostatic field lines at the graphene edges [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008); F. T. Vasko and I. V. Zozoulenko, Appl. Phys. Lett. 97, 092115 (2010)]. This effect originates from the particular geometric design of the samples. A direct consequence is a charge accumulation at the graphene edges giving a value for the density, which deviates from the simple picture of a plate capacitor and also varies along the width of the graphene sample. Entering the quantum Hall regime would, in principle, allow probing this accumulation thanks to the extreme sensitivity of this quantum effect to charge density and the charge distribution. Moreover, the presence of an additional and counter-propagating edge channel has been predicted [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008)] giving a fundamental aspect to this technological issue. In this article, we investigate this effect by tuning a high mobility graphene wire into the quantum Hall regime in which charge carriers probe the electrostatic potential at high magnetic field close to the edges. We observe a slight deviation to the linear shift of the quantum Hall plateaus with magnetic field and we study its evolution for different filling factors, which correspond to different probed regions in real space. We discuss the possible origins of this effect including an increase of the charge density towards the edges.

  11. Position-Momentum Duality and Fractional Quantum Hall Effect in Chern Insulators

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claassen, Martin; Lee, Ching-Hua; Thomale, Ronny; Qi, Xiao-Liang; Devereaux, Thomas P

    2015-06-11

    We develop a first quantization description of fractional Chern insulators that is the dual of the conventional fractional quantum Hall (FQH) problem, with the roles of position and momentum interchanged. In this picture, FQH states are described by anisotropic FQH liquids forming in momentum-space Landau levels in a fluctuating magnetic field. The fundamental quantum geometry of the problem emerges from the interplay of single-body and interaction metrics, both of which act as momentum-space duals of the geometrical picture of the anisotropic FQH effect. We then present a novel broad class of ideal Chern insulator lattice models that act as dualsmore » of the isotropic FQH effect. The interacting problem is well-captured by Haldane pseudopotentials and affords a detailed microscopic understanding of the interplay of interactions and non-trivial quantum geometry.« less

  12. Position-Momentum Duality and Fractional Quantum Hall Effect in Chern Insulators

    SciTech Connect (OSTI)

    Claassen, Martin; Lee, Ching-Hua; Thomale, Ronny; Qi, Xiao-Liang; Devereaux, Thomas P

    2015-06-11

    We develop a first quantization description of fractional Chern insulators that is the dual of the conventional fractional quantum Hall (FQH) problem, with the roles of position and momentum interchanged. In this picture, FQH states are described by anisotropic FQH liquids forming in momentum-space Landau levels in a fluctuating magnetic field. The fundamental quantum geometry of the problem emerges from the interplay of single-body and interaction metrics, both of which act as momentum-space duals of the geometrical picture of the anisotropic FQH effect. We then present a novel broad class of ideal Chern insulator lattice models that act as duals of the isotropic FQH effect. The interacting problem is well-captured by Haldane pseudopotentials and affords a detailed microscopic understanding of the interplay of interactions and non-trivial quantum geometry.

  13. Record surface state mobility and quantum Hall effect in topological insulator thin films via interface engineering

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Koirala, Nikesh; Han, Myung -Geun; Brahlek, Matthew; Salehi, Maryam; Wu, Liang; Dai, Jixia; Waugh, Justin; Nummy, Thomas; Moon, Jisoo; Zhu, Yimei; et al

    2015-11-19

    Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)2Se3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. Furthermore, this scheme has led to the first observation of the quantum Hall effect in Bi2Se3.

  14. Record surface state mobility and quantum Hall effect in topological insulator thin films via interface engineering

    SciTech Connect (OSTI)

    Koirala, Nikesh; Han, Myung -Geun; Brahlek, Matthew; Salehi, Maryam; Wu, Liang; Dai, Jixia; Waugh, Justin; Nummy, Thomas; Moon, Jisoo; Zhu, Yimei; Dessau, Daniel; Wu, Weida; Armitage, N. Peter; Oh, Seongshik

    2015-11-19

    Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)2Se3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. Furthermore, this scheme has led to the first observation of the quantum Hall effect in Bi2Se3.

  15. Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect

    SciTech Connect (OSTI)

    Mogi, M. Yoshimi, R.; Yasuda, K.; Kozuka, Y.; Tsukazaki, A.; Takahashi, K. S.; Kawasaki, M.; Tokura, Y.

    2015-11-02

    Quantum anomalous Hall effect (QAHE), which generates dissipation-less edge current without external magnetic field, is observed in magnetic-ion doped topological insulators (TIs) such as Cr- and V-doped (Bi,Sb){sub 2}Te{sub 3}. The QAHE emerges when the Fermi level is inside the magnetically induced gap around the original Dirac point of the TI surface state. Although the size of gap is reported to be about 50 meV, the observable temperature of QAHE has been limited below 300 mK. We attempt magnetic-Cr modulation doping into topological insulator (Bi,Sb){sub 2}Te{sub 3} films to increase the observable temperature of QAHE. By introducing the rich-Cr-doped thin (1 nm) layers at the vicinity of both the surfaces based on non-Cr-doped (Bi,Sb){sub 2}Te{sub 3} films, we have succeeded in observing the QAHE up to 2 K. The improvement in the observable temperature achieved by this modulation-doping appears to be originating from the suppression of the disorder in the surface state interacting with the rich magnetic moments. Such a superlattice designing of the stabilized QAHE may pave a way to dissipation-less electronics based on the higher-temperature and zero magnetic-field quantum conduction.

  16. Intrinsic quantum anomalous Hall effect in the kagome lattice Cs2LiMn3F12

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xu, Gang; Lian, Biao; Zhang, Shou -Cheng

    2015-10-27

    In a kagome lattice, the time reversal symmetry can be broken by a staggered magnetic flux emerging from ferromagnetic ordering and intrinsic spin-orbit coupling, leading to several well-separated nontrivial Chern bands and intrinsic quantum anomalous Hall effect. Based on this idea and ab initio calculations, we propose the realization of the intrinsic quantum anomalous Hall effect in the single layer Cs2Mn3F12 kagome lattice and on the (001) surface of a Cs2LiMn3F12 single crystal by modifying the carrier coverage on it, where the band gap is around 20 meV. Furthermore, a simplified tight binding model based on the in-plane ddσ antibondingmore » states is constructed to understand the topological band structures of the system.« less

  17. Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells

    SciTech Connect (OSTI)

    Arapov, Yu. G.; Gudina, S. V. Klepikova, A. S.; Neverov, V. N.; Shelushinina, N. G.; Yakunin, M. V.

    2015-02-15

    The dependences of the longitudinal and Hall resistances on a magnetic field in the integer quantum Hall effect regime in n-InGaAs/GaAs heterostructures with a double quantum well are measured in the range of magnetic fields B = 0–16 T and temperatures T = 0.05–4.2 K, before and after infrared illumination. Analysis of the temperature dependence of the width of transitions between plateaus of the quantum Hall effect is performed in the scope of the scaling hypothesis allowing for electron-electron interaction effects.

  18. Isotropic Hall effect and ''freeze-in'' of carriers in the InGaAs self-assembled quantum wires

    SciTech Connect (OSTI)

    Kunets, Vas. P.; Prosandeev, S.; Mazur, Yu. I.; Ware, M. E.; Teodoro, M. D.; Dorogan, V. G.; Lytvyn, P. M.; Salamo, G. J.

    2011-10-15

    Using molecular beam epitaxy, we prepared an anisotropic media consisting of InGaAs quantum wires epitaxially grown on GaAs (311)A. Anisotropy is observed in the lateral conductivity and photoluminescence polarization. However, an isotropic Hall effect is observed in the same samples. We show that the Hall effect in this anisotropic heterostructure remains isotropic regardless of the change of the doping in GaAs barriers and regardless of the InGaAs coverage, whereas the conductivity anisotropy experiences a strong change under these actions. In addition, we observed an anomalous increase in carrier density, ''freeze-in,'' at low temperatures. In order to explain this, we generalized the theory of Look [D. C. Look, Phys. Rev B 42, 3578 (1990)] by considering the low field magneto-transport in anisotropic media. This theory confirms that the Hall constant remains isotropic in anisotropic semiconductor heterostructures, agreeing with our experiment and explains the anomalous behavior of carriers as a result of multi-band conductivity.

  19. Anomalous spin precession and spin Hall effect in semiconductor...

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Search Results Journal Article: Anomalous spin precession and spin Hall effect in semiconductor quantum wells Citation Details In-Document Search Title: Anomalous ...

  20. Effective Field Theory of Fractional Quantized Hall Nematics (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Effective Field Theory of Fractional Quantized Hall Nematics Citation Details In-Document Search Title: Effective Field Theory of Fractional Quantized Hall Nematics We present a Landau-Ginzburg theory for a fractional quantized Hall nematic state and the transition to it from an isotropic fractional quantum Hall state. This justifies Lifshitz-Chern-Simons theory - which is shown to be its dual - on a more microscopic basis and enables us to compute a ground state

  1. Quantum anomalous Hall effect and a nontrivial spin-texture in ultra-thin films of magnetic topological insulators

    SciTech Connect (OSTI)

    Duong, Le Quy; Das, Tanmoy; Feng, Y. P.; Lin, Hsin

    2015-05-07

    We study the evolution of quantum anomalous Hall (QAH) effect for a Z{sub 2} topological insulator (TI) thin films in a proximity induced magnetic phase by a realistic layered k·p model with interlayer coupling. We examine three different magnetic configurations in which ferromagnetic (FM) layer(s) is added either from one side (FM-TI), from both sides (FM-TI-FM), or homogeneously distributed (magnetically doped) in a TI slab. We map out the thickness-dependent topological phase diagram under various experimental conditions. The critical magnetic exchange energy for the emergence of QAH effect in the latter two cases decreases monotonically with increasing number of quintuple layers (QLs), while it becomes surprisingly independent of the film thickness in the former case. The gap size of the emergent QAH insulator depends on the non-magnetic “parent” gap of the TI thin film and is tuned by the FM exchange energy, opening a versatile possibility to achieve room-temperature QAH insulator in various topological nanomaterials. Finally, we find that the emergent spin-texture in the QAH effect is very unconventional, non-“hedgehog” type; and it exhibits a chiral out-of-plane spin-flip texture within the same valence band which is reminiscent of dynamical “skyrmion” pattern, except our results are in the momentum space.

  2. Intrinsic quantum anomalous Hall effect in the kagome lattice Cs2LiMn3F12

    SciTech Connect (OSTI)

    Xu, Gang; Lian, Biao; Zhang, Shou -Cheng

    2015-10-27

    In a kagome lattice, the time reversal symmetry can be broken by a staggered magnetic flux emerging from ferromagnetic ordering and intrinsic spin-orbit coupling, leading to several well-separated nontrivial Chern bands and intrinsic quantum anomalous Hall effect. Based on this idea and ab initio calculations, we propose the realization of the intrinsic quantum anomalous Hall effect in the single layer Cs2Mn3F12 kagome lattice and on the (001) surface of a Cs2LiMn3F12 single crystal by modifying the carrier coverage on it, where the band gap is around 20 meV. Furthermore, a simplified tight binding model based on the in-plane ddσ antibonding states is constructed to understand the topological band structures of the system.

  3. Metal-to-insulator switching in quantum anomalous Hall states

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kou, Xufeng; Pan, Lei; Wang, Jing; Fan, Yabin; Choi, Eun Sang; Lee, Wei -Li; Nie, Tianxiao; Murata, Koichi; Shao, Qiming; Zhang, Shou -Cheng; et al

    2015-10-07

    After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the six quintuple-layer (Cr0.12Bi0.26Sb0.62)2Te3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phase diagram is confirmed through themore » angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. Additionally, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.« less

  4. Metal-to-insulator switching in quantum anomalous Hall states

    SciTech Connect (OSTI)

    Kou, Xufeng; Pan, Lei; Wang, Jing; Fan, Yabin; Choi, Eun Sang; Lee, Wei -Li; Nie, Tianxiao; Murata, Koichi; Shao, Qiming; Zhang, Shou -Cheng; Wang, Kang L.

    2015-10-07

    After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the six quintuple-layer (Cr0.12Bi0.26Sb0.62)2Te3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phase diagram is confirmed through the angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. Additionally, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.

  5. Contactless measurement of alternating current conductance in quantum Hall structures

    SciTech Connect (OSTI)

    Drichko, I. L.; Diakonov, A. M.; Malysh, V. A.; Smirnov, I. Yu.; Ilyinskaya, N. D.; Usikova, A. A.; Galperin, Y. M.; Kummer, M.; Känel, H. von

    2014-10-21

    We report a procedure to determine the frequency-dependent conductance of quantum Hall structures in a broad frequency domain. The procedure is based on the combination of two known probeless methods—acoustic spectroscopy and microwave spectroscopy. By using the acoustic spectroscopy, we study the low-frequency attenuation and phase shift of a surface acoustic wave in a piezoelectric crystal in the vicinity of the electron (hole) layer. The electronic contribution is resolved using its dependence on a transverse magnetic field. At high frequencies, we study the attenuation of an electromagnetic wave in a coplanar waveguide. To quantitatively calibrate these data, we use the fact that in the quantum-Hall-effect regime the conductance at the maxima of its magnetic field dependence is determined by extended states. Therefore, it should be frequency independent in a broad frequency domain. The procedure is verified by studies of a well-characterized p-SiGe/Ge/SiGe heterostructure.

  6. Admittance of multiterminal quantum Hall conductors at kilohertz frequencies

    SciTech Connect (OSTI)

    Hernndez, C.; Consejo, C.; Chaubet, C.; Degiovanni, P.

    2014-03-28

    We present an experimental study of the low frequency admittance of quantum Hall conductors in the [100?Hz, 1?MHz] frequency range. We show that the frequency dependence of the admittance of the sample strongly depends on the topology of the contacts connections. Our experimental results are well explained within the Christen and Bttiker approach for finite frequency transport in quantum Hall edge channels taking into account the influence of the coaxial cables capacitance. In the Hall bar geometry, we demonstrate that there exists a configuration in which the cable capacitance does not influence the admittance measurement of the sample. In this case, we measure the electrochemical capacitance of the sample and observe its dependence on the filling factor.

  7. Hall-effect arc protector

    DOE Patents [OSTI]

    Rankin, Richard A.; Kotter, Dale K.

    1997-01-01

    The Hall-Effect Arc Protector is used to protect sensitive electronics from high energy arcs. The apparatus detects arcs by monitoring an electrical conductor, of the instrument, for changes in the electromagnetic field surrounding the conductor which would be indicative of a possible arcing condition. When the magnitude of the monitored electromagnetic field exceeds a predetermined threshold, the potential for an instrument damaging are exists and the control system logic activates a high speed circuit breaker. The activation of the breaker shunts the energy imparted to the input signal through a dummy load to the ground. After the arc condition is terminated, the normal signal path is restored.

  8. Hall-effect arc protector

    DOE Patents [OSTI]

    Rankin, R.A.; Kotter, D.K.

    1997-05-13

    The Hall-Effect Arc Protector is used to protect sensitive electronics from high energy arcs. The apparatus detects arcs by monitoring an electrical conductor, of the instrument, for changes in the electromagnetic field surrounding the conductor which would be indicative of a possible arcing condition. When the magnitude of the monitored electromagnetic field exceeds a predetermined threshold, the potential for an instrument damaging are exists and the control system logic activates a high speed circuit breaker. The activation of the breaker shunts the energy imparted to the input signal through a dummy load to the ground. After the arc condition is terminated, the normal signal path is restored. 2 figs.

  9. Measurement-only topological quantum computation via anyonic...

    Office of Scientific and Technical Information (OSTI)

    Subject: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANYONS; HALL EFFECT; INTERFEROMETRY; QUANTUM COMPUTERS; QUANTUM MECHANICS; QUANTUM TELEPORTATION; TOPOLOGY; ...

  10. Charge carrier coherence and Hall effect in organic semiconductors...

    Office of Scientific and Technical Information (OSTI)

    Charge carrier coherence and Hall effect in organic semiconductors Citation Details In-Document Search Title: Charge carrier coherence and Hall effect in organic semiconductors ...

  11. Reduced spin-Hall effects from magnetic proximity (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    Reduced spin-Hall effects from magnetic proximity Prev Next Title: Reduced spin-Hall effects from magnetic proximity Authors: Zhang, Wei ; Jungfleisch, Matthias B. ; Jiang, ...

  12. A spin-filter made of quantum anomalous Hall insulator nanowires

    SciTech Connect (OSTI)

    Wu, Jiansheng

    2014-07-28

    Topological end states (TES) in quantum anomalous Hall insulator nanowires can induce tunneling within the gap. Such TES are spin polarized, thus the induced current is spin polarized as well, which can be used to construct a spin-filter applied in spintronics. An interferometry device is designed to control the polarized current as well. The advantage and finite size effect on this system are discussed.

  13. The fluctuation induced Hall effect

    SciTech Connect (OSTI)

    Shen, W.; Prager, S.C.

    1993-02-01

    The fluctuation induced Hall term, [le][approximately][ovr J] [times] [approximately][ovr B][ge], has been measured in the MST reversed field pinch. The term is of interest as a possible source of current self-generation (dynamo). It is found to be non-negligible, but small in that it can account for less than 25% of the dynamo driven current.

  14. The fluctuation induced Hall effect

    SciTech Connect (OSTI)

    Shen, W.; Prager, S.C.

    1993-02-01

    The fluctuation induced Hall term, {le}{approximately}{ovr J} {times} {approximately}{ovr B}{ge}, has been measured in the MST reversed field pinch. The term is of interest as a possible source of current self-generation (dynamo). It is found to be non-negligible, but small in that it can account for less than 25% of the dynamo driven current.

  15. Formation of quantum spin Hall state on Si surface and energy gap scaling

    Office of Scientific and Technical Information (OSTI)

    with strength of spin orbit coupling (Journal Article) | SciTech Connect Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling Citation Details In-Document Search Title: Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator

  16. Precise quantization of anomalous Hall effect near zero magnetic field

    SciTech Connect (OSTI)

    Bestwick, A. J.; Fox, E. J.; Kou, Xufeng; Pan, Lei; Wang, Kang L.; Goldhaber-Gordon, D.

    2015-05-04

    In this study, we report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in the Hall resistance to within a part per 10,000 and a longitudinal resistivity under 1 Ω per square, with chiral edge transport explicitly confirmed by nonlocal measurements. Deviations from this behavior are found to be caused by thermally activated carriers, as indicated by an Arrhenius law temperature dependence. Using the deviations as a thermometer, we demonstrate an unexpected magnetocaloric effect and use it to reach near-perfect quantization by cooling the sample below the dilution refrigerator base temperature in a process approximating adiabatic demagnetization refrigeration.

  17. Fractional quantum Hall junctions and two-channel Kondo models

    SciTech Connect (OSTI)

    Sandler, Nancy P.; Fradkin, Eduardo

    2001-06-15

    A mapping between fractional quantum Hall (FQH) junctions and the two-channel Kondo model is presented. We discuss this relation in detail for the particular case of a junction of a FQH state at {nu}=1/3 and a normal metal. We show that in the strong coupling regime this junction has a non-Fermi-liquid fixed point. At this fixed point the electron Green{close_quote}s function has a branch cut and the impurity entropy is equal to S=1/2ln2. We construct the space of perturbations at the strong coupling fixed point and find that the dimension of the tunneling operator is 1/2. These properties are strongly reminiscent of the non-Fermi-liquid fixed points of a number of quantum impurity models, particularly the two-channel Kondo model. However we have found that, in spite of these similarities, the Hilbert spaces of these two systems are quite different. In particular, although in a special limit the Hamiltonians of both systems are the same, their Hilbert spaces are not since they are determined by physically distinct boundary conditions. As a consequence the spectrum of operators in the two problems is different.

  18. Formation of quantum spin Hall state on Si surface and energy...

    Office of Scientific and Technical Information (OSTI)

    Si surface and energy gap scaling with strength of spin orbit coupling Title: Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit ...

  19. AC-magnetotransport of a 2DEG in the quantum Hall regime

    SciTech Connect (OSTI)

    Hernndez, C.; Chaubet, C.

    2014-05-15

    In this paper we present an ac-magneto-transport study of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime, for frequencies in the range [100Hz, 1MHz]. We present a new approach to understand admittance measurements based in the Landauer-Buttiker formalism for QHE edge channels and taking into account the capacitance and the topology of the cables connected to the contacts used in the measurements. Our model predicts an universal behavior with the a-dimensional parameter RC? where R is the 2 wires resistance of the 2DEG, C the capacitance cables and the angular frequency, in agreement with experiments.

  20. Charge carrier coherence and Hall effect in organic semiconductors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force actingmore » on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Lastly, our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.« less

  1. Anomalous Hall effect in YIG|Pt bilayers

    SciTech Connect (OSTI)

    Meyer, Sibylle Schlitz, Richard; Geprägs, Stephan; Opel, Matthias; Huebl, Hans; Goennenwein, Sebastian T. B.; Gross, Rudolf

    2015-03-30

    We measure the ordinary and the anomalous Hall effect in a set of yttrium iron garnet|platinum (YIG|Pt) bilayers via magnetization orientation dependent magnetoresistance experiments. Our data show that the presence of the ferrimagnetic insulator YIG leads to an anomalous Hall effect like voltage in Pt, which is sensitive to both Pt thickness and temperature. Interpretation of the experimental findings in terms of the spin Hall anomalous Hall effect indicates that the imaginary part of the spin mixing conductance G{sub i} plays a crucial role in YIG|Pt bilayers. In particular, our data suggest a sign change in G{sub i} between 10 K and 300 K. Additionally, we report a higher order Hall effect contribution, which appears in thin Pt films on YIG at low temperatures.

  2. Stacking order dependence of inverse spin Hall effect and anomalous Hall effect in spin pumping experiments

    SciTech Connect (OSTI)

    Kim, Sang-Il; Seo, Min-Su; Park, Seung-Young; Kim, Dong-Jun; Park, Byong-Guk

    2015-05-07

    The dependence of the measured DC voltage on the non-magnetic material (NM) in NM/CoFeB and CoFeB/NM bilayers is studied under ferromagnetic resonance conditions in a TE{sub 011} resonant cavity. The directional change of the inverse spin Hall effect (ISHE) voltage V{sub ISHE} for the stacking order of the bilayer can separate the pure V{sub ISHE} and the anomalous Hall effect (AHE) voltage V{sub AHE} utilizing the method of addition and subtraction. The Ta and Ti NMs show a broad deviation of the spin Hall angle θ{sub ISH}, which originates from the AHE in accordance with the high resistivity of NMs. However, the Pt and Pd NMs show that the kinds of NMs with low resistivity are consistent with the previously reported θ{sub ISH} values. Therefore, the characteristics that NM should simultaneously satisfy to obtain a reasonable V{sub ISHE} value in bilayer systems are large θ{sub ISH} and low resistivity.

  3. Experimental Observation of the Inverse Spin Hall Effect at Room Temperature

    SciTech Connect (OSTI)

    Liu, Baoli; Shi, Junren; Wang, Wenxin; Zhao, Hongming; Li, Dafang; Zhang, Shoucheng; Xue, Qikun; Chen, Dongmin; /Beijing, Inst. Phys.

    2010-03-16

    We observe the inverse spin Hall effect in a two-dimensional electron gas confined in Al-GaAs/InGaAs quantum wells. Specifically, they find that an inhomogeneous spin density induced by the optical injection gives rise to an electric current transverse to both the spin polarization and its gradient. The spin Hall conductivity can be inferred from such a measurement through the Einstein relation and the onsager relation, and is found to have the order of magnitude of 0.5(e{sup 2}/h). The observation is made at the room temperature and in samples with macroscopic sizes, suggesting that the inverse spin Hall effects is a robust macroscopic transport phenomenon.

  4. Hall effect measurements on InAs nanowires

    SciTech Connect (OSTI)

    Bloemers, Ch.; Grap, T.; Lepsa, M. I.; Moers, J.; Gruetzmacher, D.; Lueth, H.; Trellenkamp, St.; Schaepers, Th.

    2012-10-08

    We have processed Hall contacts on InAs nanowires grown by molecular beam epitaxy using an electron beam lithography process with an extremely high alignment accuracy. The carrier concentrations determined from the Hall effect measurements on these nanowires are lower by a factor of about 4 in comparison with those measured by the common field-effect technique. The results are used to evaluate quantitatively the charging effect of the interface and surface states.

  5. Synchronization of spin-transfer torque oscillators by spin pumping, inverse spin Hall, and spin Hall effects

    SciTech Connect (OSTI)

    Elyasi, Mehrdad; Bhatia, Charanjit S.; Yang, Hyunsoo

    2015-02-14

    We have proposed a method to synchronize multiple spin-transfer torque oscillators based on spin pumping, inverse spin Hall, and spin Hall effects. The proposed oscillator system consists of a series of nano-magnets in junction with a normal metal with high spin-orbit coupling, and an accumulative feedback loop. We conduct simulations to demonstrate the effect of modulated charge currents in the normal metal due to spin pumping from each nano-magnet. We show that the interplay between the spin Hall effect and inverse spin Hall effect results in synchronization of the nano-magnets.

  6. Charge carrier coherence and Hall effect in organic semiconductors

    Office of Scientific and Technical Information (OSTI)

    OPEN: Charge carrier coherence and Hall effect in organic semiconductors H. T. Yi1, Y. N. Gartstein2 & V. Podzorov1-3 Received: 21 January 2016 Accepted: 29 February 2016 ...

  7. Edge-channel interferometer at the graphene quantum Hall pn junction

    SciTech Connect (OSTI)

    Morikawa, Sei; Moriya, Rai; Masubuchi, Satoru Machida, Tomoki; Watanabe, Kenji; Taniguchi, Takashi

    2015-05-04

    We demonstrate a quantum Hall edge-channel interferometer in a high-quality graphene pn junction under a high magnetic field. The co-propagating p and n quantum Hall edge channels traveling along the pn interface functions as a built-in Aharonov-Bohm-type interferometer, the interferences in which are sensitive to both the external magnetic field and the carrier concentration. The trajectories of peak and dip in the observed resistance oscillation are well reproduced by our numerical calculation that assumes magnetic flux quantization in the area enclosed by the co-propagating edge channels. Coherent nature of the co-propagating edge channels is confirmed by the checkerboard-like pattern in the dc-bias and magnetic-field dependences of the resistance oscillations.

  8. Optical detection of spin Hall effect in metals

    SciTech Connect (OSTI)

    Erve, O. M. J. van ‘t Hanbicki, A. T.; McCreary, K. M.; Li, C. H.; Jonker, B. T.

    2014-04-28

    Optical techniques have been widely used to probe the spin Hall effect in semiconductors. In metals, however, only electrical methods such as nonlocal spin valve transport, ferromagnetic resonance, or spin torque transfer experiments have been successful. These methods require complex processing techniques and measuring setups. We show here that the spin Hall effect can be observed in non-magnetic metals such as Pt and β-W, using a standard bench top magneto-optical Kerr system with very little sample preparation. Applying a square wave current and using Fourier analysis significantly improve our detection level. One can readily determine the angular dependence of the induced polarization on the bias current direction (very difficult to do with voltage detection), the orientation of the spin Hall induced polarization, and the sign of the spin Hall angle. This optical approach is free from the complications of various resistive effects, which can compromise voltage measurements. This opens up the study of spin Hall effect in metals to a variety of spin dynamic and spatial imaging experiments.

  9. Study of the effects of guide field on Hall reconnection

    SciTech Connect (OSTI)

    Tharp, T. D.; Yamada, M.; Ji, H.; Lawrence, E.; Dorfman, S.; Myers, C.; Yoo, J.; Huang, Y.-M.; Bhattacharjee, A.

    2013-05-15

    The results from guide field studies on the Magnetic Reconnection Experiment (MRX) are compared with results from Hall magnetohydrodynamic (HMHD) reconnection simulation with guide field. The quadrupole field, a signature of two-fluid reconnection at zero guide field, is modified by the presence of a finite guide field in a manner consistent with HMHD simulation. The modified Hall current profile contains reduced electron flows in the reconnection plane, which quantitatively explains the observed reduction of the reconnection rate. The present results are consistent with the hypothesis that the local reconnection dynamics is dominated by Hall effects in the collisionless regime of the MRX plasmas. While very good agreement is seen between experiment and simulations, we note that an important global feature of the experiments, a compression of the guide field by the reconnecting plasma, is not represented in the simulations.

  10. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  11. Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhou, Miao; Ming, Wenmei; Liu, Zheng; Wang, Zhengfei; Yao, Yugui; Liu, Feng

    2014-11-19

    For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a unique approach to create the large-gap 2D TI state on a semiconductor surface, based on first-principles calculations and effective Hamiltonian analysis. We show that when heavy elements with strong spin orbit coupling (SOC) such as Bi and Pb atoms are deposited on a patterned H-Si(111) surface into a hexagonal lattice, they exhibit a 2D TI state with a large energy gap of ≥0.5more » eV. The TI state arises from an intriguing substrate orbital filtering effect that selects a suitable orbital composition around the Fermi level, so that the system can be matched onto a four-band effective model Hamiltonian. Furthermore, it is found that within this model, the SOC gap does not increase monotonically with the increasing strength of SOC. These interesting results may shed new light in future design and fabrication of large-gap topological quantum states.« less

  12. Effects of Enhanced Eathode Electron Emission on Hall Thruster Operation

    SciTech Connect (OSTI)

    Y. Raitses, A. Smirnov and N. J. Fisch

    2009-04-24

    Interesting discharge phenomena are observed that have to do with the interaction between the magnetized Hall thruster plasma and the neutralizing cathode. The steadystate parameters of a highly ionized thruster discharge are strongly influenced by the electron supply from the cathode. The enhancement of the cathode electron emission above its self-sustained level affects the discharge current and leads to a dramatic reduction of the plasma divergence and a suppression of large amplitude, low frequency discharge current oscillations usually related to an ionization instability. These effects correlate strongly with the reduction of the voltage drop in the region with the fringing magnetic field between the thruster channel and the cathode. The measured changes of the plasma properties suggest that the electron emission affects the electron cross-field transport in the thruster discharge. These trends are generalized for Hall thrusters of various configurations.

  13. Robustness of fractional quantum Hall states with dipolar atoms in artificial gauge fields

    SciTech Connect (OSTI)

    Grass, T.; Baranov, M. A.; Lewenstein, M.

    2011-10-15

    The robustness of fractional quantum Hall states is measured as the energy gap separating the Laughlin ground state from excitations. Using thermodynamic approximations for the correlation functions of the Laughlin state and the quasihole state, we evaluate the gap in a two-dimensional system of dipolar atoms exposed to an artificial gauge field. For Abelian fields, our results agree well with the results of exact diagonalization for small systems but indicate that the large value of the gap predicted [Phys. Rev. Lett. 94, 070404 (2005)] was overestimated. However, we are able to show that the small gap found in the Abelian scenario dramatically increases if we turn to non-Abelian fields squeezing the Landau levels.

  14. Effects of wall electrodes on Hall effect thruster plasma

    SciTech Connect (OSTI)

    Langendorf, S. Walker, M.; Xu, K.

    2015-02-15

    This paper investigates the physical mechanisms that cause beneficial and detrimental performance effect observed to date in Hall effect thrusters with wall electrodes. It is determined that the wall electrode sheath can reduce ion losses to the wall if positioned near the anode (outside the dense region of the plasma) such that an ion-repelling sheath is able to form. The ability of the wall electrode to form an ion-repelling sheath is inversely proportional to the current drawn—if the wall electrode becomes the dominant sink for the thruster discharge current, increases in wall electrode bias result in increased local plasma potential rather than an ion-repelling sheath. A single-fluid electron flow model gives results that mimic the observed potential structures and the current-sharing fractions between the anode and wall electrodes, showing that potential gradients in the presheath and bulk plasma come at the expense of current draw to the wall electrodes. Secondary electron emission from the wall electrodes (or lack thereof) is inferred to have a larger effect if the electrodes are positioned near the exit plane than if positioned near the anode, due to the difference in energy deposition from the plasma.

  15. Hall effect in a strong magnetic field: Direct comparisons of compressible magnetohydrodynamics and the reduced Hall magnetohydrodynamic equations

    SciTech Connect (OSTI)

    Martin, L. N.; Dmitruk, P.; Gomez, D. O.

    2010-11-15

    In this work we numerically test a model of Hall magnetohydrodynamics in the presence of a strong mean magnetic field: the reduced Hall magnetohydrodynamic model (RHMHD) derived by [Gomez et al., Phys. Plasmas 15, 102303 (2008)] with the addition of weak compressible effects. The main advantage of this model lies in the reduction of computational cost. Nevertheless, up until now the degree of agreement with the original Hall MHD system and the range of validity in a regime of turbulence were not established. In this work direct numerical simulations of three-dimensional Hall MHD turbulence in the presence of a strong mean magnetic field are compared with simulations of the weak compressible RHMHD model. The results show that the degree of agreement is very high (when the different assumptions of RHMHD, such as spectral anisotropy, are satisfied). Nevertheless, when the initial conditions are isotropic but the mean magnetic field is maintained strong, the results differ at the beginning but asymptotically reach a good agreement at relatively short times. We also found evidence that the compressibility still plays a role in the dynamics of these systems, and the weak compressible RHMHD model is able to capture these effects. In conclusion the weak compressible RHMHD model is a valid approximation of the Hall MHD turbulence in the relevant physical context.

  16. Invited Article: An integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument

    SciTech Connect (OSTI)

    Kühne, P. Schubert, M. Hofmann, T.; Herzinger, C. M. Woollam, J. A.

    2014-07-15

    We report on the development of the first integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument, covering an ultra wide spectral range from 3 cm{sup −1} to 7000 cm{sup −1} (0.1–210 THz or 0.4–870 meV). The instrument comprises four sub-systems, where the magneto-cryostat-transfer sub-system enables the usage of the magneto-cryostat sub-system with the mid-infrared ellipsometer sub-system, and the far-infrared/terahertz ellipsometer sub-system. Both ellipsometer sub-systems can be used as variable angle-of-incidence spectroscopic ellipsometers in reflection or transmission mode, and are equipped with multiple light sources and detectors. The ellipsometer sub-systems are operated in polarizer-sample-rotating-analyzer configuration granting access to the upper left 3 × 3 block of the normalized 4 × 4 Mueller matrix. The closed cycle magneto-cryostat sub-system provides sample temperatures between room temperature and 1.4 K and magnetic fields up to 8 T, enabling the detection of transverse and longitudinal magnetic field-induced birefringence. We discuss theoretical background and practical realization of the integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument, as well as acquisition of optical Hall effect data and the corresponding model analysis procedures. Exemplarily, epitaxial graphene grown on 6H-SiC, a tellurium doped bulk GaAs sample and an AlGaN/GaN high electron mobility transistor structure are investigated. The selected experimental datasets display the full spectral, magnetic field and temperature range of the instrument and demonstrate data analysis strategies. Effects from free charge carriers in two dimensional confinement and in a volume material, as well as quantum mechanical effects (inter-Landau-level transitions) are observed and discussed exemplarily.

  17. Quantum valley Hall states and topological transitions in Pt(Ni, Pd)-decorated silicene: A first-principles study

    SciTech Connect (OSTI)

    Zhao, Bao; Zhang, Jiayong; Wang, Yicheng; Yang, Zhongqin

    2014-12-28

    The electronic states and topological behaviors of Pt(Ni, Pd)-decorated silicene are investigated by using an ab-initio method. All the three kinds of the adatoms prefer hollow sites of the silicene, guaranteeing the Dirac cones unbroken. The Pt(Ni, Pd)-decorated silicene systems all present quantum valley Hall (QVH) states with the gap opened exactly at the Fermi level. The gaps of the QVH states can be increased substantially by applying a positive electric field. Very fascinating phase transitions from QVH to quantum spin Hall (QSH) and then to QVH again are achieved in the Pt/Ni-decorated silicene when a negative electric field is applied. The QSH state in the Pd case with a negative electric field is, however, quenched because of relatively larger Rashba spin-orbit coupling (SOC) than the intrinsic SOC in the system. Our findings may be useful for the applications of silicene-based devices in valleytronics and spintronics.

  18. Anomalous Hall effect in magnetic disordered alloys: Effects of spin orbital coupling

    SciTech Connect (OSTI)

    Ma, L.; Gao, W. B.; Zhou, S. M.; Shi, Z.; He, P.; Miao, J.; Jiang, Y.

    2013-12-28

    For disordered ternary Fe{sub 0.5}(Pd{sub 1−x}Pt{sub x}){sub 0.5} alloy films, the anomalous Hall effect obeys the conventional scaling law ρ{sub AH}=aρ{sub xx}+bρ{sub xx}{sup 2} with the longitudinal resistivity ρ{sub xx} and anomalous Hall resistivity ρ{sub AH}. Contributed by the intrinsic term and the extrinsic side-jump one, the scattering-independent anomalous Hall conductivity b increases with increasing Pt/Pd concentration. In contrast, the skew scattering parameter a is mainly influenced by the residual resistivity. The present results will facilitate the theoretical studies of the anomalous Hall effect in magnetic disordered alloys.

  19. Perturbation analysis of ionization oscillations in Hall effect thrusters

    SciTech Connect (OSTI)

    Hara, Kentaro Sekerak, Michael J.; Boyd, Iain D.; Gallimore, Alec D.

    2014-12-15

    A perturbation analysis of ionization oscillations, which cause low frequency oscillations of the discharge plasma, in Hall effect thrusters is presented including the electron energy equation in addition to heavy-species transport. Excitation and stabilization of such oscillations, often called the breathing mode, are discussed in terms of the growth rate obtained from the linear perturbation equations of the discharge plasma. The instability induced from the ionization occurs only when the perturbation in the electron energy is included while the neutral atom flow contributes to the damping of the oscillation. Effects of the electron energy loss mechanisms such as wall heat loss, inelastic collisions, and convective heat flux are discussed. It is shown that the ionization oscillations can be damped when the electron transport is reduced and the electron temperature increases so that the energy loss to the wall stabilizes the ionization instability.

  20. All electrical manipulation of magnetization dynamics in a ferromagnet by antiferromagnets with anisotropic spin Hall effects.

    SciTech Connect (OSTI)

    Zhang, Wei; Jungfleisch, Matthias B.; Freimuth, Frank; Jiang, Wanjun; Sklenar, Joseph; Pearson, John E.; Ketterson, John B.; Mokrousov, Yuri; Hoffmann, Axel

    2015-10-06

    We investigate spin-orbit torques of metallic CuAu-I-type antiferromagnets using spin-torque ferromagnetic resonance tuned by a dc-bias current. The observed spin torques predominantly arise from diffusive transport of spin current generated by the spin Hall effect. We find a growth-orientation dependence of the spin torques by studying epitaxial samples, which may be correlated to the anisotropy of the spin Hall effect. The observed anisotropy is consistent with first-principles calculations on the intrinsic spin Hall effect. Our work suggests large tunable spin-orbit effects in magnetically-ordered materials.

  1. Ultrahigh sensitivity of anomalous Hall effect sensor based on Cr-doped

    Office of Scientific and Technical Information (OSTI)

    Bi2Te3 topological insulator thin films (Journal Article) | SciTech Connect Ultrahigh sensitivity of anomalous Hall effect sensor based on Cr-doped Bi2Te3 topological insulator thin films Citation Details In-Document Search This content will become publicly available on July 1, 2017 Title: Ultrahigh sensitivity of anomalous Hall effect sensor based on Cr-doped Bi2Te3 topological insulator thin films Anomalous Hall effect (AHE) was recently discovered in magnetic element-doped topological

  2. Single-valley quantum Hall ferromagnet in a dilute MgxZn1-xO/ZnO strongly correlated two-dimensional electron system

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kozuka, Y.; Tsukazaki, A.; Maryenko, D.; Falson, J.; Bell, C.; Kim, M.; Hikita, Y.; Hwang, H. Y.; Kawasaki, M.

    2012-02-03

    We investigate the spin susceptibility (g*m*) of dilute two-dimensional (2D) electrons confined at the MgxZn1-xO/ZnO heterointerface. Magnetotransport measurements show a four-fold enhancement of g*m*, dominated by the increase in the Landé g-factor. The g-factor enhancement leads to a ferromagnetic instability of the electron gas as evidenced by sharp resistance spikes. At high magnetic field, the large g*m* leads to full spin polarization, where we found sudden increase in resistance around the filling factors of half-integer, accompanied by complete disappearance of fractional quantum Hall (QH) states. Along with its large effective mass and the high electron mobility, our result indicates thatmore » the ZnO 2D system is ideal for investigating the effect of electron correlations in the QH regime.« less

  3. Metallization and Hall-effect of Mg{sub 2}Ge under high pressure

    SciTech Connect (OSTI)

    Li, Yuqiang; Gao, Yang; Han, Yonghao Liu, Cailong; Peng, Gang; Ke, Feng; Gao, Chunxiao; Wang, Qinglin; Ma, Yanzhang

    2015-10-05

    The electrical transport properties of Mg{sub 2}Ge under high pressure were studied with the in situ temperature-dependent resistivity and Hall-effect measurements. The theoretically predicted metallization of Mg{sub 2}Ge was definitely found around 7.4 GPa by the temperature-dependent resistivity measurement. Other two pressure-induced structural phase transitions were also reflected by the measurements. Hall-effect measurement showed that the dominant charge carrier in the metallic Mg{sub 2}Ge was hole, indicating the “bad metal” nature of Mg{sub 2}Ge. The Hall mobility and charge carrier concentration results pointed out that the electrical transport behavior in the antifluorite phase was controlled by the increase quantity of drifting electrons under high pressure, but in both anticotunnite and Ni{sub 2}In-type phases it was governed by the Hall mobility.

  4. Highly tunable quantum Hall far-infrared photodetector by use of GaAs/Al{sub x}Ga{sub 1?x}As-graphene composite material

    SciTech Connect (OSTI)

    Tang, Chiu-Chun [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Ling, D. C. [Department of Physics, Tamkang University, Tamsui Dist., New Taipei City 25137, Taiwan (China); Chi, C. C.; Chen, Jeng-Chung [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

    2014-11-03

    We have developed a highly tunable, narrow band far-infrared (FIR) photodetector which utilizes the characteristic merits of graphene and two-dimensional electron gas (2DEG) in GaAs/Al{sub x}Ga{sub 1?x}As heterostructure in the Quantum Hall states (QHS). The heterostructure surface is covered with chemical vapor-deposited graphene, which functions as a transparent top-gate to vary the electron density of the 2DEG. FIR response observed in the vicinity of integer QH regime can be effectively tuned in a wide range of 27102?cm{sup ?1} with a bias voltage less than ?1?V. In addition, we have found that the presence of graphene can genuinely modulate the photoresponse. Our results demonstrate a promising direction for realizing a tunable long-wavelength FIR detector using QHS in GaAs 2DEG/ graphene composite material.

  5. Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene

    SciTech Connect (OSTI)

    Shakouri, Kh.; Peeters, F. M. [Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen (Belgium); Vasilopoulos, P.; Vargiamidis, V. [Department of Physics, Concordia University, 7141 Sherbrooke Ouest Montral, Qubec H4B 1R6 (Canada); Hai, G.-Q. [Instituto de Fisica de So Carlos, Universidade de So Paulo, So Carlos, SP 13560-970 (Brazil)

    2014-05-26

    We study the commensurability oscillations in silicene subject to a perpendicular electric field E{sub z}, a weak magnetic field B, and a weak periodic potential V=V{sub 0}cos(Cy),C=2?/a{sub 0} with a{sub 0} its period. The field E{sub z} and/or the modulation lift the spin degeneracy of the Landau levels and lead to spin and valley resolved Weiss oscillations. The spin resolution is maximal when the field E{sub z} is replaced by a periodic one E{sub z}=E{sub 0}cos(Dy),D=2?/b{sub 0}, while the valley one is maximal for b{sub 0}?=?a{sub 0}. In certain ranges of B values, the current is fully spin or valley polarized. Additional quantum Hall conductivity plateaux arise due to spin and valley intra-Landau-level transitions.

  6. Driving and detecting ferromagnetic resonance in insulators with the spin Hall effect.

    SciTech Connect (OSTI)

    Sklenar, Joseph; Zhang, Wei; Jungfleisch, Matthias B.; Jiang, Wanjun; Chang, Houchen; Pearson, John E.; Wu, Mingzhong; Ketterson, John B.; Hoffmann, Axel

    2015-11-06

    We demonstrate the generation and detection of spin-torque ferromagnetic resonance in Pt/Y3Fe5O12 (YIG) bilayers. A unique attribute of this system is that the spin Hall effect lies at the heart of both the generation and detection processes and no charge current is passing through the insulating magnetic layer. When the YIG undergoes resonance, a dc voltage is detected longitudinally along the Pt that can be described by two components. One is the mixing of the spin Hall magnetoresistance with the microwave current. The other results from spin pumping into the Pt being converted to a dc current through the inverse spin Hall effect. The voltage is measured with applied magnetic field directions that range in-plane to nearly perpendicular. We find that for magnetic fields that are mostly out-of-plane, an imaginary component of the spin mixing conductance is required to model our data.

  7. Microscopic theory of quantum anomalous Hall effect in graphene...

    Office of Scientific and Technical Information (OSTI)

    American Physical Society Sponsoring Org: USDOE Country of Publication: United States Language: English Word Cloud More Like This Free Publicly Accessible Full Text Accepted...

  8. Quantum Anomalous Hall Effect in 2D Organic Topological Insulators...

    Office of Scientific and Technical Information (OSTI)

    American Physical Society Sponsoring Org: USDOE Country of Publication: United States Language: English Word Cloud More Like This Free Publicly Accessible Full Text Accepted...

  9. Quantum Anomalous Hall Effect in 2D Organic Topological Insulators...

    Office of Scientific and Technical Information (OSTI)

    Publisher: American Physical Society Sponsoring Org: USDOE Country of Publication: United States Language: English Word Cloud More Like This Free Publicly Accessible Full Text ...

  10. Observation of the Integer Quantum Hall Effect in Record High...

    Office of Scientific and Technical Information (OSTI)

    DOE Contract Number: DE-AC04-94AL85000 Resource Type: Journal Article Resource Relation: Journal Name: Applied Physics Letters; Related Information: Proposed for publication in ...

  11. Fractional quantum spin Hall effect in flat-band checkerboard...

    Office of Scientific and Technical Information (OSTI)

    GrantContract Number: FG02-06ER46305 Type: Publisher's Accepted Manuscript Journal Name: Physical Review B Additional Journal Information: Journal Volume: 90; Journal Issue: 8; ...

  12. Hysteretic magnetoresistance and unconventional anomalous Hall effect in the frustrated magnet TmB4

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sunku, Sai Swaroop; Kong, Tai; Ito, Toshimitsu; Canfield, Paul C.; Shastry, B. Sriram; Sengupta, Pinaki; Panagopoulos, Christos

    2016-05-11

    We study TmB4, a frustrated magnet on the Archimedean Shastry-Sutherland lattice, through magnetization and transport experiments. The lack of anisotropy in resistivity shows that TmB4 is an electronically three-dimensional system. The magnetoresistance (MR) is hysteretic at low temperature even though a corresponding hysteresis in magnetization is absent. The Hall resistivity shows unconventional anomalous Hall effect (AHE) and is linear above saturation despite a large MR. In conclusion, we propose that complex structures at magnetic domain walls may be responsible for the hysteretic MR and may also lead to the AHE.

  13. Spin Hall effect-controlled magnetization dynamics in NiMnSb

    SciTech Connect (OSTI)

    Dürrenfeld, P. Ranjbar, M.; Gerhard, F.; Gould, C.; Molenkamp, L. W.; Åkerman, J.

    2015-05-07

    We investigate the influence of a spin current generated from a platinum layer on the ferromagnetic resonance (FMR) properties of an adjacent ferromagnetic layer composed of the halfmetallic half-Heusler material NiMnSb. Spin Hall nano-oscillator devices are fabricated, and the technique of spin torque FMR is used to locally study the magnetic properties as in-plane anisotropies and resonance fields. A change in the FMR linewidth, in accordance with the additional spin torque produced by the spin Hall effect, is present for an applied dc current. For sufficiently large currents, this should yield auto-oscillations, which however are not achievable in the present device geometry.

  14. Experimental evidences of a large extrinsic spin Hall effect in AuW alloy

    SciTech Connect (OSTI)

    Laczkowski, P.; Rojas-Sánchez, J.-C.

    2014-04-07

    We report an experimental study of a gold-tungsten alloy (7 at. % W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pumping with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length of 2 nm estimated by the spin sink experiments in the lateral spin valves. With its chemical stability, high resistivity, and small induced damping, this AuW alloy may find applications in the nearest future.

  15. Spin-torque switching of a nano-magnet using giant spin hall effect

    SciTech Connect (OSTI)

    Penumatcha, Ashish V. Das, Suprem R.; Chen, Zhihong; Appenzeller, Joerg

    2015-10-15

    The Giant Spin Hall Effect(GSHE) in metals with high spin-orbit coupling is an efficient way to convert charge currents to spin currents, making it well-suited for writing information into magnets in non-volatile magnetic memory as well as spin-logic devices. We demonstrate the switching of an in-plane CoFeB magnet using a combination of GSHE and an external magnetic field. The magnetic field dependence of the critical current is used to estimate the spin hall angle with the help of a thermal activation model for spin-transfer torque switching of a nanomagnet.

  16. EX/P5-4 Two-Fluid Hall Effect on Plasma Relaxation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    EXP5-4 Two-Fluid Hall Effect on Plasma Relaxation in a High-Temperature Plasma W.X. Ding 1,3), V. Mirnov 2,3), A. F. Almagri 2,3), D.L. Brower 1,3), D. Craig 2,3), B.H. Deng 1,3), ...

  17. Magnetoresistance, electrical conductivity, and Hall effect of glassy carbon

    SciTech Connect (OSTI)

    Baker, D.F.

    1983-02-01

    These properties of glassy carbon heat treated for three hours between 1200 and 2700/sup 0/C were measured from 3 to 300/sup 0/K in magnetic fields up to 5 tesla. The magnetoresistance was generally negative and saturated with reciprocal temperature, but still increased as a function of magnetic field. The maximum negative magnetoresistance measured was 2.2% for 2700/sup 0/C material. Several models based on the negative magnetoresistance being proportional to the square of the magnetic moment were attempted; the best fit was obtained for the simplest model combining Curie and Pauli paramagnetism for heat treatments above 1600/sup 0/C. Positive magnetoresistance was found only in less than 1600/sup 0/C treated glassy carbon. The electrical conductivity, of the order of 200 (ohm-cm)/sup -1/ at room temperature, can be empirically written as sigma = A + Bexp(-CT/sup -1/4) - DT/sup -1/2. The Hall coefficient was independent of magnetic field, insensitive to temperature, but was a strong function of heat treatment temperature, crossing over from negative to positive at about 1700/sup 0/C and ranging from -0.048 to 0.126 cm/sup 3//coul. The idea of one-dimensional filaments in glassy carbon suggested by the electrical conductivity is compatible with the present consensus view of the microstructure.

  18. Observation of inverse spin Hall effect in ferromagnetic FePt alloys using spin Seebeck effect

    SciTech Connect (OSTI)

    Seki, Takeshi Takanashi, Koki; Uchida, Ken-ichi; Kikkawa, Takashi; Qiu, Zhiyong; Saitoh, Eiji

    2015-08-31

    We experimentally observed the inverse spin Hall effect (ISHE) of ferromagnetic FePt alloys. Spin Seebeck effect due to the temperature gradient generated the spin current (J{sub s}) in the FePt|Y{sub 3}Fe{sub 5}O{sub 12} (YIG) structure, and J{sub s} was injected from YIG to FePt and converted to the charge current through ISHE of FePt. The significant difference in magnetization switching fields for FePt and YIG led to the clear separation of the voltage of ISHE from that of anomalous Nernst effect in FePt. We also investigated the effect of ordering of FePt crystal structure on the magnitude of ISHE voltage in FePt.

  19. Determination of the Pt spin diffusion length by spin-pumping and spin Hall effect

    SciTech Connect (OSTI)

    Zhang, Wei; Pearson, John E.; Hoffmann, Axel; Vlaminck, Vincent; Divan, Ralu; Bader, Samuel D.

    2013-12-09

    The spin diffusion length of Pt at room temperature and at 8 K is experimentally determined via spin pumping and spin Hall effect in permalloy/Pt bilayers. Voltages generated during excitation of ferromagnetic resonance from the inverse spin Hall effect and anisotropic magnetoresistance effect were investigated with a broadband approach. Varying the Pt layer thickness gives rise to an evolution of the voltage line shape due to the superposition of the above two effects. By studying the ratio of the two voltage components with the Pt layer thickness, the spin diffusion length of Pt can be directly extracted. We obtain a spin diffusion length of ∼1.2 nm at room temperature and ∼1.6 nm at 8 K.

  20. Sheath oscillation characteristics and effect on near-wall conduction in a krypton Hall thruster

    SciTech Connect (OSTI)

    Zhang, Fengkui Kong, Lingyi; Li, Chenliang; Yang, Haiwei; Li, Wei

    2014-11-15

    Despite its affordability, the krypton Hall-effect thruster in applications always had problems in regard to performance. The reason for this degradation is studied from the perspective of the near-wall conductivity of electrons. Using the particle-in-cell method, the sheath oscillation characteristics and its effect on near-wall conduction are compared in the krypton and xenon Hall-effect thrusters both with wall material composed of BNSiO{sub 2}. Comparing these two thrusters, the sheath in the krypton-plasma thruster will oscillate at low electron temperatures. The near-wall conduction current is only produced by collisions between electrons and wall, thereby causing a deficiency in the channel current. The sheath displays spatial oscillations only at high electron temperature; electrons are then reflected to produce the non-oscillation conduction current needed for the krypton-plasma thruster. However, it is accompanied with intensified oscillations.

  1. Comparison of quantum confinement effects between quantum wires and dots

    SciTech Connect (OSTI)

    Li, Jingbo; Wang, Lin-Wang

    2004-03-30

    Dimensionality is an important factor to govern the electronic structures of semiconductor nanocrystals. The quantum confinement energies in one-dimensional quantum wires and zero-dimensional quantum dots are quite different. Using large-scale first-principles calculations, we systematically study the electronic structures of semiconductor (including group IV, III-V, and II-VI) surface-passivated quantum wires and dots. The band-gap energies of quantum wires and dots have the same scaling with diameter for a given material. The ratio of band-gap-increases between quantum wires and dots is material-dependent, and slightly deviates from 0.586 predicted by effective-mass approximation. Highly linear polarization of photoluminescence in quantum wires is found. The degree of polarization decreases with the increasing temperature and size.

  2. Enhanced spin Hall effect by electron correlations in CuBi alloys

    SciTech Connect (OSTI)

    Gu, Bo Xu, Zhuo; Mori, Michiyasu; Maekawa, Sadamichi; Ziman, Timothy

    2015-05-07

    A recent experiment in CuBi alloys obtained a large spin Hall angle (SHA) of −0.24 (Niimi et al., Phys. Rev. Lett. 109, 156602 (2012)). We find that the SHA can be dramatically enhanced by Bi impurities close to the Cu surface. The mechanisms of this enhancement are two-fold. One is that the localized impurity state on surface has a decreased hybridization and combined with Coulomb correlation effect. The other comes from the low-dimensional state of conduction electrons on surface, which results in a further enhancement of skew scattering by impurities. Furthermore, we note that a discrepancy in sign of SHA between the experiment and previous theories is simply caused by different definitions of SHA. This re-establishes skew scattering as the essential mechanism underlying the spin Hall effect in CuBi alloys.

  3. Realization of tunable spin-dependent splitting in intrinsic photonic spin Hall effect

    SciTech Connect (OSTI)

    Ling, Xiaohui; Yi, Xunong; Zhou, Xinxing; Liu, Yachao; Shu, Weixing; Wen, Shuangchun; Luo, Hailu

    2014-10-13

    We report the realization of tunable spin-dependent splitting in intrinsic photonic spin Hall effect. By breaking the rotational symmetry of a cylindrical vector beam, the intrinsic vortex phases that the two spin components of the vector beam carries, which is similar to the geometric Pancharatnam-Berry phase, are no longer continuous in the azimuthal direction, and leads to observation of spin accumulation at the opposite edge of the beam. Due to the inherent nature of the phase and independency of light-matter interaction, the observed photonic spin Hall effect is intrinsic. Modulating the topological charge of the vector beam, the spin-dependent splitting can be enhanced and the direction of spin accumulation is switchable. Our findings may provide a possible route for generation and manipulation of spin-polarized photons, and enables spin-based photonics applications.

  4. Interface effect in coupled quantum wells

    SciTech Connect (OSTI)

    Hao, Ya-Fei

    2014-06-28

    This paper intends to theoretically investigate the effect of the interfaces on the Rashba spin splitting of two coupled quantum wells. The results show that the interface related Rashba spin splitting of the two coupled quantum wells is both smaller than that of a step quantum well which has the same structure with the step quantum well in the coupled quantum wells. And the influence of the cubic Dresselhaus spin-orbit interaction of the coupled quantum wells is larger than that of a step quantum well. It demonstrates that the spin relaxation time of the two coupled quantum wells will be shorter than that of a step quantum well. As for the application in the spintronic devices, a step quantum well may be better than the coupled quantum wells, which is mentioned in this paper.

  5. Hall-effect-controlled gas dynamics in protoplanetary disks. I. Wind solutions at the inner disk

    SciTech Connect (OSTI)

    Bai, Xue-Ning

    2014-08-20

    The gas dynamics of protoplanetary disks (PPDs) is largely controlled by non-ideal magnetohydrodynamic (MHD) effects including Ohmic resistivity, the Hall effect, and ambipolar diffusion. Among these the role of the Hall effect is the least explored and most poorly understood. In this series, we have included, for the first time, all three non-ideal MHD effects in a self-consistent manner to investigate the role of the Hall effect on PPD gas dynamics using local shearing-box simulations. In this first paper, we focus on the inner region of PPDs, where previous studies (Bai and Stone 2013; Bai 2013) excluding the Hall effect have revealed that the inner disk up to ∼10 AU is largely laminar, with accretion driven by a magnetocentrifugal wind. We confirm this basic picture and show that the Hall effect modifies the wind solutions depending on the polarity of the large-scale poloidal magnetic field B{sub 0} threading the disk. When B{sub 0}⋅Ω>0, the horizontal magnetic field is strongly amplified toward the disk interior, leading to a stronger disk wind (by ∼50% or less in terms of the wind-driven accretion rate). The enhanced horizontal field also leads to much stronger large-scale Maxwell stress (magnetic braking) that contributes to a considerable fraction of the wind-driven accretion rate. When B{sub 0}⋅Ω<0, the horizontal magnetic field is reduced, leading to a weaker disk wind (by ≲ 20%) and negligible magnetic braking. Under fiducial parameters, we find that when B{sub 0}⋅Ω>0, the laminar region extends farther to ∼10-15 AU before the magnetorotational instability sets in, while for B{sub 0}⋅Ω<0, the laminar region extends only to ∼3-5 AU for a typical accretion rate of ∼10{sup –8} to10{sup –7} M {sub ☉} yr{sup –1}. Scaling relations for the wind properties, especially the wind-driven accretion rate, are provided for aligned and anti-aligned field geometries.

  6. Hall effect in the extremely large magnetoresistance semimetal WTe{sub 2}

    SciTech Connect (OSTI)

    Luo, Yongkang Dai, Y. M.; Taylor, A. J.; Yarotski, D. A.; Prasankumar, R. P.; Thompson, J. D.; Li, H.; Miao, H.; Shi, Y. G.; Ding, H.

    2015-11-02

    We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe{sub 2}. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both electron- and hole-type carriers were determined. We observed a sudden increase in the hole density below ∼160 K, which is likely associated with the temperature-induced Lifshitz transition reported by a previous photoemission study. In addition, a more pronounced reduction in electron density occurs below 50 K, giving rise to comparable electron and hole densities at low temperature. Our observations indicate a possible electronic structure change below 50 K, which might be the direct driving force of the electron-hole “compensation” and the extremely large magnetoresistance as well. Numerical simulations imply that this material is unlikely to be a perfectly compensated system.

  7. Chemical reaction at ferromagnet/oxide interface and its influence on anomalous Hall effect

    SciTech Connect (OSTI)

    Liu, Yi-Wei; Teng, Jiao E-mail: ghyu@mater.ustb.edu.cn; Zhang, Jing-Yan; Liu, Yang; Chen, Xi; Li, Xu-Jing; Feng, Chun; Wang, Hai-Cheng; Li, Ming-Hua; Yu, Guang-Hua E-mail: ghyu@mater.ustb.edu.cn; Wu, Zheng-Long

    2014-09-08

    Chemical reactions at the ferromagnet/oxide interface in [Pt/Fe]{sub 3}/MgO and [Pt/Fe]{sub 3}/SiO{sub 2} multilayers before and after annealing were investigated by X-ray photoelectron spectroscopy. The results show that Fe atoms at the Fe/MgO interface were completely oxidized in the as-grown state and significantly deoxidized after vacuum annealing. However, only some of the Fe atoms at the Fe/SiO{sub 2} interface were oxidized and rarely deoxidized after annealing. The anomalous Hall effect was modified by this interfacial chemical reaction. The saturation anomalous Hall resistance (R{sub xy}) was greatly increased in the [Pt/Fe]{sub 3}/MgO multilayers after annealing and was 350% higher than that in the as-deposited film, while R{sub xy} of the [Pt/Fe]{sub 3}/SiO{sub 2} multilayer only increased 10% after annealing.

  8. Influence of oblique magnetic field on electron cross-field transport in a Hall effect thruster

    SciTech Connect (OSTI)

    Miedzik, Jan; Daniłko, Dariusz; Barral, Serge

    2015-04-15

    The effects of the inclination of the magnetic field with respect to the channel walls in a Hall effect thruster are numerically studied with the use of a one-dimensional quasi-neutral Particle-In-Cell model with guiding center approximation of electron motion along magnetic lines. Parametric studies suggest that the incidence angle strongly influences electron transport across the magnetic field. In ion-focusing magnetic topologies, electrons collide predominantly on the side of the magnetic flux tube closer to the anode, thus increasing the electron cross-field drift. The opposite effect is observed in ion-defocussing topology.

  9. Optimal preselection and postselection in weak measurements for observing photonic spin Hall effect

    SciTech Connect (OSTI)

    Zhou, Xinxing; Li, Xing; Luo, Hailu Wen, Shuangchun

    2014-02-03

    Photonic spin Hall effect (SHE) holds great potential applications in precision metrology. How to obtain a high measurement precision is an important issue to detect the photonic SHE. In this Letter, we propose using optimal preselection and postselection in weak measurements to enhance the measurement precision. We find that the maximum weak value and pointer shift can be obtained with an optimal overlap of preselection and postselection states. These findings offer the possibility for improving the precision of weak measurements and thereby have possible applications for accurately characterizing the parameters of nanostructures.

  10. Temperature-driven band inversion in Pb?.??Sn?.??Se: Optical and Hall-effect studies

    SciTech Connect (OSTI)

    Anand, Naween; Gu, Genda; Buvaev, Sanal; Hebard, A. F.; Tanner, D. B.; Chen, Zhiguo; Li, Zhiqiang; Choudhary, Kamal; Sinnott, S. B.; Martin, C.

    2014-12-23

    Optical and Hall-effect measurements have been performed on single crystals of Pb?.??Sn?.??Se, a IV-VI mixed chalcogenide. The temperature dependent (10300 K) reflectance was measured over 407000 cm? (5870 meV) with an extension to 15,500 cm? (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via Kramers-Kronig analysis as well as by the Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the low-energy optical spectra. It is found that the valence-conduction band transition energy as well as the free carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Density function theory calculation for the electronic band structure also make similar predictions.

  11. Temperature-driven band inversion in Pb?.??Sn?.??Se: Optical and Hall-effect studies

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Anand, Naween; Gu, Genda; Buvaev, Sanal; Hebard, A. F.; Tanner, D. B.; Chen, Zhiguo; Li, Zhiqiang; Choudhary, Kamal; Sinnott, S. B.; Martin, C.

    2014-12-23

    Optical and Hall-effect measurements have been performed on single crystals of Pb?.??Sn?.??Se, a IV-VI mixed chalcogenide. The temperature dependent (10300 K) reflectance was measured over 407000 cm? (5870 meV) with an extension to 15,500 cm? (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via Kramers-Kronig analysis as well as by the Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the low-energy opticalmorespectra. It is found that the valence-conduction band transition energy as well as the free carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Density function theory calculation for the electronic band structure also make similar predictions.less

  12. Resonant cavity mode dependence of anomalous and inverse spin Hall effect

    SciTech Connect (OSTI)

    Kim, Sang-Il; Seo, Min-Su; Park, Seung-young

    2014-05-07

    The direct current electric voltage induced by the Inverse Spin Hall Effect (ISHE) and Anomalous Hall Effect (AHE) was investigated in the TE{sub 011} and TE{sub 102} cavities. The ISHE and AHE components were distinguishable through the fitting of the voltage spectrum. The unwanted AHE was minimized by placing the DUT (Device Under Test) at the center of both the TE{sub 011} and TE{sub 102} cavities. The voltage of ISHE in the TE{sub 011} cavity was larger than that in the TE{sub 102} cavity due to the higher quality factor of the former. Despite optimized centering, AHE voltage from TE{sub 011} cavity was also higher. The reason was attributed to the E-field distribution inside the cavity. In the case of the TE{sub 011} cavity, the DUT was easily exposed to the E-field in all directions. Therefore, the parasitic AHE voltage in the TE{sub 102} cavity was less sensitive than that in the TE{sub 011} cavity to decentering problem.

  13. Beta (β) tungsten thin films: Structure, electron transport, and giant spin Hall effect

    SciTech Connect (OSTI)

    Hao, Qiang; Chen, Wenzhe; Xiao, Gang

    2015-05-04

    We use a simple magnetron sputtering process to fabricate beta (β) tungsten thin films, which are capable of generating giant spin Hall effect. As-deposited thin films are always in the metastable β-W phase from 3.0 to 26.7 nm. The β-W phase remains intact below a critical thickness of 22.1 nm even after magnetic thermal annealing at 280 °C, which is required to induce perpendicular magnetic anisotropy (PMA) in a layered structure of β-W/Co{sub 40}Fe{sub 40}B{sub 20}/MgO. Intensive annealing transforms the thicker films (>22.1 nm) into the stable α-W phase. We analyze the structure and grain size of both β- and α-W thin films. Electron transport in terms of resistivity and normal Hall effect is studied over a broad temperature range of 10 K to at least 300 K on all samples. Very low switching current densities are achieved in β-W/Co{sub 40}Fe{sub 40}B{sub 20}/MgO with PMA. These basic properties reveal useful behaviors in β-W thin films, making them technologically promising for spintronic magnetic random access memories and spin-logic devices.

  14. Effect of the magnetic lenses on the electron current due to near wall conductivity in a Hall thruster

    SciTech Connect (OSTI)

    Wu Zhiwen; Liu Xiangyang; Wang Ningfei; Yu Daren

    2010-07-15

    The effect of magnetic lens on the electron current due to near wall conductivity (NWC) in a Hall thruster is studied. A Monte Carlo model is employed to simulate the effect of the large magnetic field incidence angle on the electron current. The simulation results show that the electron current due to NWC decreases in the case of large incidence. The simulation qualitatively agrees with the related experimental result. And the simulation also demonstrates that choosing the curvature angle of the magnetic field is also a key factor to design a Hall thruster with high operation performance.

  15. Detection of in-depth helical spin structures by planar Hall effect

    SciTech Connect (OSTI)

    Basaran, Ali C. Guénon, S.; Schuller, Ivan K.; Morales, R.

    2015-06-22

    We developed a method to determine the magnetic helicity and to study reversal mechanisms in exchange biased nanostructures using Planar Hall Effect (PHE). As a test case, we use an in-depth helical spin configuration that occurs during magnetization reversal in exchange coupled Ni/FeF{sub 2} heterostructures. We show the way to induce and determine the sign of the helicity from PHE measurements on a lithographically patterned cross. The helicity sign can be controlled by the angle between the externally applied magnetic field and a well-defined unidirectional anisotropy axis. Furthermore, the PHE signal reveals complex reversal features due to small deviations of the local unidirectional anisotropy axes from the crystallographic easy axis. The simulations using an incomplete domain wall model are in excellent agreement with the experimental data. These studies show that helical spin formations in nanomagnetic systems can be studied using laboratory-based magnetotransport.

  16. Extrinsic anomalous Hall effect in epitaxial Mn{sub 4}N films

    SciTech Connect (OSTI)

    Meng, M.; Wu, S. X. Ren, L. Z.; Zhou, W. Q.; Wang, Y. J.; Wang, G. L.; Li, S. W.

    2015-01-19

    Anomalous Hall effect (AHE) in ferrimagnetic Mn{sub 4}N epitaxial films grown by molecular-beam epitaxy is investigated. The longitudinal conductivity σ{sub xx} is within the superclean regime, indicating Mn{sub 4}N is a highly conducting material. We further demonstrate that the AHE signal in 40-nm-thick films is mainly due to the extrinsic contributions based on the analysis fitted by ρ{sub AH}=a′ρ{sub xx0}+bρ{sub xx}{sup 2} and σ{sub AH}∝σ{sub xx}. Our study not only provide a strategy for further theoretical work on antiperovskite manganese nitrides but also shed promising light on utilizing their extrinsic AHE to fabricate spintronic devices.

  17. Design and Implementation of a Hall Effect Sensor Array Applied to Recycling Hard Drive Magnets

    SciTech Connect (OSTI)

    Kisner, Roger; Lenarduzzi, Roberto; Killough, Stephen M; McIntyre, Timothy J

    2015-01-01

    Rare earths are an important resource for many electronic components and technologies. Examples abound including Neodymium magnets used in mobile devices and computer hard drives (HDDs), and a variety of renewable energy technologies (e.g., wind turbines). Approximately 21,000 metric tons of Neodymium is processed annually with less than 1% being recycled. An economic system to assist in the recycling of magnet material from post-consumer goods, such as Neodymium Iron Boron magnets commonly found in hard drives is presented. A central component of this recycling measurement system uses an array of 128 Hall Effect sensors arranged in two columns to detect the magnetic flux lines orthogonal to the HDD. Results of using the system to scan planar shaped objects such as hard drives to identify and spatially locate rare-earth magnets for removal and recycling from HDDs are presented. Applications of the sensor array in other identification and localization of magnetic components and assemblies will be presented.

  18. Maxwell-Garnett effective medium theory: Quantum nonlocal effects

    SciTech Connect (OSTI)

    Moradi, Afshin

    2015-04-15

    We develop the Maxwell-Garnett theory for the effective medium approximation of composite materials with metallic nanoparticles by taking into account the quantum spatial dispersion effects in dielectric response of nanoparticles. We derive a quantum nonlocal generalization of the standard Maxwell-Garnett formula, by means the linearized quantum hydrodynamic theory in conjunction with the Poisson equation as well as the appropriate additional quantum boundary conditions.

  19. Effects of Strain and Quantum Confinement in Optically Pumped...

    Office of Scientific and Technical Information (OSTI)

    Effects of Strain and Quantum Confinement in Optically Pumped Nuclear Magnetic Resonance ... Citation Details In-Document Search Title: Effects of Strain and Quantum Confinement in ...

  20. Quantum effects in the dynamics of deeply supercooled water ...

    Office of Scientific and Technical Information (OSTI)

    Quantum effects in the dynamics of deeply supercooled water Citation Details In-Document Search Title: Quantum effects in the dynamics of deeply supercooled water Authors: Agapov, ...

  1. Analysis of the spin Hall effect in CuIr alloys: Combined approach of density functional theory and Hartree-Fock approximation

    SciTech Connect (OSTI)

    Xu, Zhuo Gu, Bo; Mori, Michiyasu; Maekawa, Sadamichi; Ziman, Timothy

    2015-05-07

    We analyze the spin Hall effect in CuIr alloys in theory by the combined approach of the density functional theory (DFT) and Hartree-Fock (HF) approximation. The spin Hall angle (SHA) is obtained to be negative without the local correlation effects. After including the local correlation effects of the 5d orbitals of Ir impurities, the SHA becomes positive with realistic correlation parameters and consistent with experiment [Niimi et al., Phys. Rev. Lett. 106, 126601 (2011)]. Moreover, our analysis shows that the DFT + HF approach is a convenient and general method to study the influence of local correlation effects on the spin Hall effect.

  2. Magnetometry of micro-magnets with electrostatically defined Hall bars

    SciTech Connect (OSTI)

    Lachance-Quirion, Dany; Camirand Lemyre, Julien; Bergeron, Laurent; Sarra-Bournet, Christian; Pioro-Ladrière, Michel

    2015-11-30

    Micro-magnets are key components for quantum information processing with individual spins, enabling arbitrary rotations and addressability. In this work, characterization of sub-micrometer sized CoFe ferromagnets is performed with Hall bars electrostatically defined in a two-dimensional electron gas. Due to the ballistic nature of electron transport in the cross junction of the Hall bar, anomalies such as the quenched Hall effect appear near zero external magnetic field, thus hindering the sensitivity of the magnetometer to small magnetic fields. However, it is shown that the sensitivity of the diffusive limit can be almost completely restored at low temperatures using a large current density in the Hall bar of about 10 A/m. Overcoming the size limitation of conventional etched Hall bars with electrostatic gating enables the measurement of magnetization curves of 440 nm wide micro-magnets with a signal-to-noise ratio above 10{sup 3}. Furthermore, the inhomogeneity of the stray magnetic field created by the micro-magnets is directly measured using the gate-voltage-dependent width of the sensitive area of the Hall bar.

  3. Observation of a Macroscopically Quantum-Entangled Insulator

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... The only previously known example was the Nobel-Prize-winning discovery of the quantum Hall effect insulator in the 1980s in a two-dimensional electron system under a large ...

  4. Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures

    SciTech Connect (OSTI)

    Alegria, L. D.; Petta, J. R.; Ji, H.; Cava, R. J.; Yao, N.; Clarke, J. J.

    2014-08-04

    We demonstrate the van der Waals epitaxy of the topological insulator compound Bi{sub 2}Te{sub 3} on the ferromagnetic insulator Cr{sub 2}Ge{sub 2}Te{sub 6}. The layers are oriented with (001)Bi{sub 2}Te{sub 3}||(001)Cr{sub 2}Ge{sub 2}Te{sub 6} and (110)Bi{sub 2}Te{sub 3}||(100)Cr{sub 2}Ge{sub 2}Te{sub 6}. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi{sub 2}Te{sub 3} on Cr{sub 2}Ge{sub 2}Te{sub 6} exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr{sub 2}Ge{sub 2}Te{sub 6}. The 61 K Curie temperature of Cr{sub 2}Ge{sub 2}Te{sub 6} and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE.

  5. Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn{sub 4}N epitaxial thin film

    SciTech Connect (OSTI)

    Shen, Xi; Shigematsu, Kei; Chikamatsu, Akira Fukumura, Tomoteru; Hirose, Yasushi; Hasegawa, Tetsuya

    2014-08-18

    We report the electrical transport properties of ferrimagnetic Mn{sub 4}N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn{sub 4}N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m{sup 3}, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.

  6. Direct observation of a resolvable spin separation in the spin Hall effect of light at an air-glass interface

    SciTech Connect (OSTI)

    Ren, Jin-Li; Wang, Bo; Xiao, Yun-Feng; Gong, Qihuang; Li, Yan

    2015-09-14

    We theoretically and experimentally demonstrate that it is possible to directly observe the resolvable spin separation in the spin Hall effect of light at an air-glass interface by choosing optimal parameters. When a P-polarized light with a beam waist of 10 μm is incident around Brewster's angle, the two spin components of the reflected beam can be completely separated by eliminating the influence of the in-plane wavevector spread. This not only obviously reveals the strong impacts of the polarization state, the incident angle, the beam waist, and the in-plane wavevector spread, but also intuitively visualizes the observation of the spin Hall effect of light.

  7. Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers

    SciTech Connect (OSTI)

    Gong, Zhirui; Liu, G. B.; Yu, Hongyi; Xiao, Di; Cui, Xiaodong; Xu, Xiaodong; Yao, Wang

    2013-01-01

    In monolayer group-VI transition metal dichalcogenides, charge carriers have spin and valley degrees of freedom, both associated with magnetic moments. On the other hand, the layer degree of freedom in multilayers is associated with electrical polarization. Here we show that transition metal dichalcogenide bilayers offer an unprecedented platform to realize a strong coupling between the spin, valley and layer pseudospin of holes. Such coupling gives rise to the spin Hall effect and spin-dependent selection rule for optical transitions in inversion symmetric bilayer and leads to a variety of magnetoelectric effects permitting quantum manipulation of these electronic degrees of freedom. Oscillating electric and magnetic fields can both drive the hole spin resonance where the two fields have valley-dependent interference, making an interplay between the spin and valley as information carriers possible for potential valley-spintronic applications. We show how to realize quantum gates on the spin qubit controlled by the valley bit.

  8. Quantized spin waves in single Co/Pt dots detected by anomalous Hall effect based ferromagnetic resonance

    SciTech Connect (OSTI)

    Kikuchi, N. Furuta, M.; Okamoto, S.; Kitakami, O.; Shimatsu, T.

    2014-12-15

    Anomalous Hall effect (AHE) based ferromagnetic resonance (FMR) measurements were carried out on perpendicularly magnetized Co/Pt multilayer single dots of 0.4–3 μm in diameter. The resonance behavior was measured by detecting the decrease of perpendicular magnetization component due to magnetization precession. Resonance behavior was observed as a clear decrease of Hall voltages, and the obtained resonance fields were consistent with the results of vector-network-analyzer FMR. Spin-waves with cylindrical symmetry became significant by decreasing the dot diameter, and quantized multiple resonances were observed in the dot of 0.4 μm in diameter. The AHE based FMR proposed here is a powerful method to approach magnetization dynamics including spin waves and non-linear behavior excited in a finite nanostructure.

  9. Planar Hall effect in Y{sub 3}Fe{sub 5}O{sub 12}/IrMn films

    SciTech Connect (OSTI)

    Zhang, X. Zou, L. K.

    2014-12-29

    The planar Hall effect of IrMn on an yttrium iron garnet (YIG = Y{sub 3}Fe{sub 5}O{sub 12}) was measured in the magnetic field rotating in the film plane. The magnetic field angular dependence of planar Hall resistance (PHR) was observed in YIG/IrMn bilayer at different temperatures, while the Gd{sub 3}Ga{sub 5}O{sub 12}/IrMn film shows constant PHR for different magnetic field angles at both 10 K and 300 K. This provides evidence that IrMn has interfacial spins which can be led by ferrimagnetic layer in YIG/IrMn structure. A hysteresis can be observed in PHR-magnetic field angle loop of YIG/IrMn film at 10 K, indicative of the irreversible switching of IrMn interfacial spins at low temperature.

  10. Observation of the inverse spin Hall effect in ZnO thin films: An all-electrical approach to spin injection and detection

    SciTech Connect (OSTI)

    Prestgard, Megan C.; Tiwari, Ashutosh

    2014-03-24

    The inverse spin Hall effect (ISHE) is a newly discovered, quantum mechanical phenomenon where an applied spin current results in the generation of an electrical voltage in the transverse direction. It is anticipated that the ISHE can provide a more simple way of measuring spin currents in spintronic devices. The ISHE was first observed in noble metals that exhibit strong spin-orbit coupling. However, recently, the ISHE has been detected in conventional semiconductors (such as Si and Ge), which possess weak spin-orbit coupling. This suggests that large-spin orbit coupling is not a requirement for observing the ISHE. In this paper, we are reporting the observation of the ISHE in an alternative semiconductor material, zinc oxide (ZnO) using all-electrical means. In our study, we found that when a spin-polarized current is injected into the ZnO film from a NiFe ferromagnetic injector via an MgO tunnel barrier layer, a voltage transverse to both the direction of the current as well as its spin-polarization is generated in the ZnO layer. The polarity of this voltage signal was found to flip on reversing the direction of the injected current as well as on reversing the polarization of the current, consistent with the predictions of the ISHE process. Through careful analysis of the ISHE data, we determined a spin-Hall angle of approximately 1.651 × 10{sup −2} for ZnO, which is two orders of magnitude higher than that of silicon. Observation of a detectable room-temperature ISHE signal in ZnO via electrical injection and detection is a groundbreaking step that opens a path towards achieving transparent spin detectors for next-generation spintronic device technology.

  11. Miles Hall

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Miles Hall - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Energy Defense Waste Management Programs Advanced Nuclear Energy

  12. Significant Quantum Effects in Hydrogen Activation

    SciTech Connect (OSTI)

    Kyriakou, Georgios; Davidson, Erlend R.; Peng, Guowen; Roling, Luke T.; Singh, Suyash; Boucher, Matthew B.; Marcinkowski, Matthew D.; Mavrikakis, Manos; Michaelides, Angelos; Sykes, E. Charles H.

    2014-05-27

    Dissociation of molecular hydrogen is an important step in a wide variety of chemical, biological, and physical processes. Due to the light mass of hydrogen, it is recognized that quantum effects are often important to its reactivity. However, understanding how quantum effects impact the reactivity of hydrogen is still in its infancy. Here, we examine this issue using a well-defined Pd/Cu(111) alloy that allows the activation of hydrogen and deuterium molecules to be examined at individual Pd atom surface sites over a wide range of temperatures. Experiments comparing the uptake of hydrogen and deuterium as a function of temperature reveal completely different behavior of the two species. The rate of hydrogen activation increases at lower sample temperature, whereas deuterium activation slows as the temperature is lowered. Density functional theory simulations in which quantum nuclear effects are accounted for reveal that tunneling through the dissociation barrier is prevalent for H2 up to 190 K and for D2 up to 140 K. Kinetic Monte Carlo simulations indicate that the effective barrier to H2 dissociation is so low that hydrogen uptake on the surface is limited merely by thermodynamics, whereas the D2 dissociation process is controlled by kinetics. These data illustrate the complexity and inherent quantum nature of this ubiquitous and seemingly simple chemical process. Examining these effects in other systems with a similar range of approaches may uncover temperature regimes where quantum effects can be harnessed, yielding greater control of bond-breaking processes at surfaces and uncovering useful chemistries such as selective bond activation or isotope separation.

  13. Effect of Cusps in Time-Dependent Quantum Mechanics (Journal...

    Office of Scientific and Technical Information (OSTI)

    Effect of Cusps in Time-Dependent Quantum Mechanics Title: Effect of Cusps in Time-Dependent Quantum Mechanics Authors: Yang, Zeng-hui ; Maitra, Neepa T. ; Burke, Kieron ...

  14. HALL EFFECT CONTROLLED GAS DYNAMICS IN PROTOPLANETARY DISKS. II. FULL 3D SIMULATIONS TOWARD THE OUTER DISK

    SciTech Connect (OSTI)

    Bai, Xue-Ning

    2015-01-10

    We perform three-dimensional stratified shearing-box magnetohydrodynamic (MHD) simulations on the gas dynamics of protoplanetary disks with a net vertical magnetic flux of B {sub z0}. All three nonideal MHD effects, Ohmic resistivity, the Hall effect, and ambipolar diffusion, are included in a self-consistent manner based on equilibrium chemistry. We focus on regions toward outer disk radii, from 5 to 60 AU, where Ohmic resistivity tends to become negligible, ambipolar diffusion dominates over an extended region across the disk height, and the Hall effect largely controls the dynamics near the disk midplane. We find that at around R = 5 AU the system launches a laminar or weakly turbulent magnetocentrifugal wind when the net vertical field B {sub z0} is not too weak. Moreover, the wind is able to achieve and maintain a configuration with reflection symmetry at the disk midplane. The case with anti-aligned field polarity (Ω⋅B{sub z0}<0) is more susceptible to the magnetorotational instability (MRI) when B {sub z0} decreases, leading to an outflow oscillating in radial directions and very inefficient angular momentum transport. At the outer disk around and beyond R = 30 AU, the system shows vigorous MRI turbulence in the surface layer due to far-UV ionization, which efficiently drives disk accretion. The Hall effect affects the stability of the midplane region to the MRI, leading to strong/weak Maxwell stress for aligned/anti-aligned field polarities. Nevertheless, the midplane region is only very weakly turbulent in both cases. Overall, the basic picture is analogous to the conventional layered accretion scenario applied to the outer disk. In addition, we find that the vertical magnetic flux is strongly concentrated into thin, azimuthally extended shells in most of our simulations beyond 15 AU, leading to enhanced radial density variations know as zonal flows. Theoretical implications and observational consequences are briefly discussed.

  15. Influence of Mn concentration on magnetic topological insulator MnxBi2−xTe3 thin-film Hall-effect sensor

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ni, Y.; Zhang, Z.; Nlebedim, I. C.; Hadimani, R. L.; Jiles, D. C.

    2015-06-11

    Hall-effect (HE) sensors based on high-quality Mn-doped Bi2Te3 topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi2Te3. The sensors with low Mn concentrations, MnxBi2-xTe3, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Hall sensitivity shows weak dependence on temperature. For sensors with high Mn concentration (x = 0.23), the Hall resistance with respect to magnetic field shows a hysteretic behavior. Moreover, its sensitivity shows almost eight times as high as that ofmore »the HE sensors with low Mn concentration. The highest sensitivity can reach 43 Ω/T at very low magnetic field. This increase of Hall sensitivity is caused by the occurrence of anomalous HE (AHE) after ferromagnetic phase transition. Our work indicates that the magnetic-element-doped TIs with AHE are good candidates for HE sensors.« less

  16. Influence of Mn concentration on magnetic topological insulator MnxBi2−xTe3 thin-film Hall-effect sensor

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ni, Y.; Zhang, Z.; Nlebedim, I. C.; Hadimani, R. L.; Jiles, D. C.

    2015-06-11

    Hall-effect (HE) sensors based on high-quality Mn-doped Bi2Te3 topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi2Te3. The sensors with low Mn concentrations, MnxBi2-xTe3, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Hall sensitivity shows weak dependence on temperature. For sensors with high Mn concentration (x = 0.23), the Hall resistance with respect to magnetic field shows a hysteretic behavior. Moreover, its sensitivity shows almost eight times as high as that ofmore » the HE sensors with low Mn concentration. The highest sensitivity can reach 43 Ω/T at very low magnetic field. This increase of Hall sensitivity is caused by the occurrence of anomalous HE (AHE) after ferromagnetic phase transition. Our work indicates that the magnetic-element-doped TIs with AHE are good candidates for HE sensors.« less

  17. Quantum Transport Effects and Coherent Ultrafast Multidimensional

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Spectroscopy of Light Harvesting Photosynthetic Complexes | MIT-Harvard Center for Excitonics Transport Effects and Coherent Ultrafast Multidimensional Spectroscopy of Light Harvesting Photosynthetic Complexes March 16, 2010 at 3pm/36-428 Shaul Mukamel Department of Chemistry, University of California, Irvine shaul_001 abstract: The harvesting of solar energy and its conversion to chemical energy is essential for all forms of life. Whether quantum effects persist in the energy transport is

  18. Temperature dependence of the photo-induced inverse spin Hall effect in Au/InP hybrid structures

    SciTech Connect (OSTI)

    Khamari, Shailesh K. Porwal, S.; Dixit, V. K.; Sharma, T. K.

    2014-01-27

    Photo-induced Inverse Spin Hall Effect (ISHE) measurements on Au/InP hybrid structures are performed over a temperature range of 45 to 300 K. Dependence of the spin current density on the degree of circular polarization and also on the angle of incidence of laser beam confirms the ISHE origin of measured signal. The magnitude of ISHE increases with sample cooling. A numerical model based on the spin relaxation of non-equilibrium spin-polarized electrons is proposed for predicting the temperature dependence of ISHE. Our results indicate that the proposed device can be used as a spin photodetector over a wide temperature range.

  19. The influence of an MgO nanolayer on the planar Hall effect in NiFe films

    SciTech Connect (OSTI)

    Li, Minghua; Zhao, Zhiduo; Ma, Lin; Lu, Xiangan; Teng, Jiao; Yu, Guanghua; Yu, Guoqiang; Amiri, Pedram Khalili; Wang, Kang L.; Zhou, Wenping

    2015-03-28

    The Planar Hall Effect (PHE) in NiFe films was studied using MgO as the buffer and capping layer to reduce the shunt effect. The thermal annealing was found to be effective in increasing the sensitivity. The sensitivity of the magnetic field reached as high as 865 V/AT in a MgO (3 nm)/NiFe (5 nm)/MgO(3 nm)/Ta(3 nm) structure after annealing at 500 °C for 2 h, which is close to the sensitivity of semiconductor Hall Effect (HE) sensors. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) were used to study the sample. The results show that the top crystallization of MgO and NiFe (111) texture were improved by proper annealing. The smooth and clear bottom MgO/NiFe and top NiFe/MgO interface is evident from our data. In addition, the shunt current of Ta was decreased. These combined factors facilitate the improvement of the sensitivity of the magnetic field.

  20. Quantum gravity effects in the Kerr spacetime

    SciTech Connect (OSTI)

    Reuter, M.; Tuiran, E.

    2011-02-15

    We analyze the impact of the leading quantum gravity effects on the properties of black holes with nonzero angular momentum by performing a suitable renormalization group improvement of the classical Kerr metric within quantum Einstein gravity. In particular, we explore the structure of the horizons, the ergosphere, and the static limit surfaces as well as the phase space available for the Penrose process. The positivity properties of the effective vacuum energy-momentum tensor are also discussed and the 'dressing' of the black hole's mass and angular momentum are investigated by computing the corresponding Komar integrals. The pertinent Smarr formula turns out to retain its classical form. As for their thermodynamical properties, a modified first law of black-hole thermodynamics is found to be satisfied by the improved black holes (to second order in the angular momentum); the corresponding Bekenstein-Hawking temperature is not proportional to the surface gravity.

  1. Temperature-driven band inversion in Pb0.77Sn0.23Se: Optical and Hall effect studies

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Anand, Naween; Buvaev, Sanal; Hebard, A. F.; Tanner, D. B.; Chen, Zhiguo; Li, Zhiqiang; Choudhary, Kamal; Sinnott, S. B.; Gu, Genda; Martin, C.

    2014-12-23

    Optical and Hall-effect measurements have been performed on single crystals of Pb₀.₇₇Sn₀.₂₃Se, a IV-VI mixed chalcogenide. The temperature dependent (10–300 K) reflectance was measured over 40–7000 cm⁻¹ (5–870 meV) with an extension to 15,500 cm⁻¹ (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via Kramers-Kronig analysis as well as by the Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the low-energy opticalmore » spectra. It is found that the valence-conduction band transition energy as well as the free carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Thus, density function theory calculation for the electronic band structure also make similar predictions.« less

  2. Spin current and inverse spin Hall effect in ferromagnetic metals probed by Y{sub 3}Fe{sub 5}O{sub 12}-based spin pumping

    SciTech Connect (OSTI)

    Wang, Hailong; Du, Chunhui; Chris Hammel, P. Yang, Fengyuan

    2014-05-19

    Using ferromagnetic (FM) resonance spin pumping, we observe injection of spin currents from Y{sub 3}Fe{sub 5}O{sub 12} (YIG) films to FM metals, including Ni{sub 81}Fe{sub 19} (Py), Fe, Co, and Ni, and detection of spin currents by inverse spin Hall effect (ISHE) in the FM metals. We obtain a high effective spin mixing conductance of 6.3 × 10{sup 18} m{sup −2} in a YIG/Cu/Py trilayer and a spin Hall angle of 0.020 for Py. The spin pumping signals in Fe, Co, and Ni confirm the mechanism of ISHE in FMs is the inverse process of the anomalous Hall effect.

  3. Tuning giant anomalous Hall resistance ratio in perpendicular Hall balance

    SciTech Connect (OSTI)

    Zhang, J. Y.; Yang, G.; Wang, S. G. E-mail: ghyu@mater.ustb.edu.cn; Liu, J. L.; Wang, R. M.; Amsellem, E.; Kohn, A.; Yu, G. H. E-mail: ghyu@mater.ustb.edu.cn

    2015-04-13

    Anomalous Hall effect at room temperature in perpendicular Hall balance with a core structure of [Pt/Co]{sub 4}/NiO/[Co/Pt]{sub 4} has been tuned by functional CoO layers, where [Pt/Co]{sub 4} multilayers exhibit perpendicular magnetic anisotropy. A giant Hall resistance ratio up to 69 900% and saturation Hall resistance (R{sub S}{sup P}) up to 2590 mΩ were obtained in CoO/[Pt/Co]{sub 4}/NiO/[Co/Pt]{sub 4}/CoO system, which is 302% and 146% larger than that in the structure without CoO layers, respectively. Transmission electron microscopy shows highly textured [Co/Pt]{sub 4} multilayers and oxide layers with local epitaxial relations, indicating that the crystallographic structure has significant influence on spin dependent transport properties.

  4. Quantum nonlocal effects on optical properties of spherical nanoparticles

    SciTech Connect (OSTI)

    Moradi, Afshin

    2015-02-15

    To study the scattering of electromagnetic radiation by a spherical metallic nanoparticle with quantum spatial dispersion, we develop the standard nonlocal Mie theory by allowing for the excitation of the quantum longitudinal plasmon modes. To describe the quantum nonlocal effects, we use the quantum longitudinal dielectric function of the system. As in the standard Mie theory, the electromagnetic fields are expanded in terms of spherical vector wavefunctions. Then, the usual Maxwell boundary conditions are imposed plus the appropriate additional boundary conditions. Examples of calculated extinction spectra are presented, and it is found that the frequencies of the subsidiary peaks, due to quantum bulk plasmon excitations exhibit strong dependence on the quantum spatial dispersion.

  5. Intrinsic synchronization of an array of spin-torque oscillators driven by the spin-Hall effect

    SciTech Connect (OSTI)

    Siracusano, G. Puliafito, V.; Giordano, A.; Azzerboni, B.; Finocchio, G.; Tomasello, R.; La Corte, A.; Carpentieri, M.

    2015-05-07

    This paper micromagnetically studies the magnetization dynamics driven by the spin-Hall effect in a Platinum/Permalloy bi-layer. For a certain field and current range, the excitation of a uniform mode, characterized by a power with a spatial distribution in the whole ferromagnetic cross section, is observed. We suggest to use the ferromagnet of the bi-layer as basis for the realization of an array of spin-torque oscillators (STOs): the Permalloy ferromagnet will act as shared free layer, whereas the spacers and the polarizers are built on top of it. Following this strategy, the frequency of the uniform mode will be the same for the whole device, creating an intrinsic synchronization. The synchronization of an array of parallely connected STOs will allow to increase the output power, as necessary for technological applications.

  6. Giant spontaneous Hall effect in zero-moment Mn{sub 2}Ru{sub x}Ga

    SciTech Connect (OSTI)

    Thiyagarajah, Naganivetha; Lau, Yong-Chang; Betto, Davide; Borisov, Kiril; Coey, J. M. D.; Stamenov, Plamen; Rode, Karsten

    2015-03-23

    Spin-dependent transport properties of Mn{sub 2}Ru{sub x}Ga thin-films are studied as function of the Ru concentration and the substrate-induced strain. The large spontaneous Hall angle of 7.7% twenty times bigger than in other 3d metals is a signature of its half-metallicity. The compensation temperature where the magnetization of the two inequivalent antiferromagnetically coupled Mn sublattices cancel can be tuned by varying x or the biaxial strain. This zero-moment half metal is free from demagnetizing forces and creates no stray field, effectively removing two obstacles to integrating magnetic elements in densely packed, nanometer-scale memory elements, and millimeter-wave generators.

  7. Spin Hall magnetoresistance at Pt/CoFe{sub 2}O{sub 4} interfaces and texture effects

    SciTech Connect (OSTI)

    Isasa, Miren; Bedoya-Pinto, Amilcar; Vlez, Sal; Golmar, Federico; Snchez, Florencio; Fontcuberta, Josep; Hueso, Luis E.; Casanova, Flix

    2014-10-06

    We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe{sub 2}O{sub 4} (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR). The magnitude of the SMR depends on the interface preparation conditions, being optimal when the Pt/CFO samples are prepared in situ, in a single process. The spin-mixing interface conductance, the key parameter governing SMR and other relevant spin-dependent phenomena, such as spin pumping or spin Seebeck effect, is found to be different depending on the crystallographic orientation of CFO, highlighting the role of the composition and density of magnetic ions at the interface on spin mixing.

  8. Quantum anomalous Hall effect in single-layer and bilayer graphene...

    Office of Scientific and Technical Information (OSTI)

    B Additional Journal Information: Journal Volume: 83; Journal Issue: 15; Journal ID: ISSN 1098-0121 Publisher: American Physical Society Sponsoring Org: USDOE Country of...

  9. Non-abelian fractional quantum hall effect for fault-resistant...

    Office of Scientific and Technical Information (OSTI)

    Authors: Pan, Wei ; Thalakulam, Madhu ; Shi, Xiaoyan ; Crawford, Matthew ; Nielsen, Erik ; Cederberg, Jeffrey George Publication Date: 2013-10-01 OSTI Identifier: 1121903 Report ...

  10. Disorder Matters in the 5/2 Fractional Quantum Hall Effect (invited...

    Office of Scientific and Technical Information (OSTI)

    Close Cite: Bibtex Format Close 0 pages in this document matching the terms "" Search For Terms: Enter terms in the toolbar above to search the full text of this document for ...

  11. Disorder Matters in the 5/2 Fractional Quantum Hall Effect (invited...

    Office of Scientific and Technical Information (OSTI)

    National Laboratories contract DE-AC04-94AL85000. Outline: * Introduction * Spin ... VxyI More fractions n 1.55 x 10 cm T 50 mK 13 25 35 37 23 47 10 15 RXy(h...

  12. Anti-Zeno effect for quantum transport in disordered systems...

    Office of Scientific and Technical Information (OSTI)

    We demonstrate that repeated measurements in disordered systems can induce a quantum ... The optimal measurement interval for the anti-Zeno effect and the maximal efficiency of ...

  13. Cost-Effective Fabrication Routes for the Productionof Quantum...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Cost-Effective Fabrication Routes for the Production of Quantum Well Type Structures and Recovery of Waste Heat from Heavy Duty Trucks Automotive Thermoelectric Generators and HVAC ...

  14. Quantum dissipative effect of one dimension coupled anharmonic oscillator

    SciTech Connect (OSTI)

    Sulaiman, A.; Zen, Freddy P.

    2015-04-16

    Quantum dissipative effect of one dimension coupled anharmonic oscillator is investigated. The systems are two coupled harmonic oscillator with the different masses. The dissipative effect is studied based on the quantum state diffusion formalism. The result show that the anharmonic effect increase the amplitude but the lifetime of the oscillation depend on the damping coefficient and do not depend on the temperature.

  15. Fermilab Wilson Hall and Vicinity

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Wilson Hall and Vicinity Wilson Hall Ramsey Auditorium Booster Linac Antiproton Source Leon M. Lederman Science Education Center...

  16. Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Oveshnikov, L. N.; Kulbachinskii, V. A.; Davydov, A. B.; Aronzon, B. A.; Rozhansky, I. V.; Averkiev, N. S.; Kugel, K. I.; Tripathi, V.

    2015-11-24

    In this study, the anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gatecontrol of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHEmore » in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured.« less

  17. Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.

    SciTech Connect (OSTI)

    Oveshnikov, L. N.; Kulbachinskii, V. A.; Davydov, A. B.; Aronzon, B. A.; Rozhansky, I. V.; Averkiev, N. S.; Kugel, K. I.; Tripathi, V.

    2015-11-24

    In this study, the anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gatecontrol of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHE in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured.

  18. Spin Hall controlled magnonic microwaveguides

    SciTech Connect (OSTI)

    Demidov, V. E.; Urazhdin, S.; Rinkevich, A. B.; Reiss, G.; Demokritov, S. O.

    2014-04-14

    We use space-resolved magneto-optical spectroscopy to study the influence of spin Hall effect on the excitation and propagation of spin waves in microscopic magnonic waveguides. We find that the spin Hall effect not only increases the spin-wave propagation length, but also results in an increased excitation efficiency due to the increase of the dynamic susceptibility in the vicinity of the inductive antenna. We show that the efficiency of the propagation length enhancement is strongly dependant on the type of the excited spin-wave mode and its wavelength.

  19. Jefferson Lab Experimental Hall D

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    D Privacy and Security Notice Skip over navigation search Group This site's design is only visible in a graphical browser that supports web standards, but its content is accessible to any browser. Concerns? Hall D Navigation Hall D Main Hall D Engineering Hall D Staff Hall D Safety print version Hall D in October 2014 Related Links CEBAF at 12 GEV JLab Visitor's Center JLab Virtual Tour JLab page for scientists Experimental Hall A Experimental Hall B Experimental Hall C Hall D Task List - HDList

  20. Quantum size effects in classical hadrodynamics

    SciTech Connect (OSTI)

    Nix, J.R.

    1994-03-01

    The author discusses future directions in the development of classical hydrodynamics for extended nucleons, corresponding to nucleons of finite size interacting with massive meson fields. This new theory provides a natural covariant microscopic approach to relativistic nucleus-nucleus collisions that includes automatically spacetime nonlocality and retardation, nonequilibrium phenomena, interactions among all nucleons, and particle production. The present version of the theory includes only the neutral scalar ({sigma}) and neutral vector ({omega}) meson fields. In the future, additional isovector pseudoscalar ({pi}{sup +}, {pi}{sup {minus}}, {pi}{sup 0}), isovector vector ({rho}{sup +}, {rho}{sup {minus}}, {rho}{sup 0}), and neutral pseudoscalar ({eta}) meson fields should be incorporated. Quantum size effects should be included in the equations of motion by use of the spreading function of Moniz and Sharp, which generates an effective nucleon mass density smeared out over a Compton wavelength. However, unlike the situation in electrodynamics, the Compton wavelength of the nucleon is small compared to its radius, so that effects due to the intrinsic size of the nucleon dominate.

  1. Study of non-linear Hall effect in nitrogen-grown ZnO microstructure and the effect of H{sup +}-implantation

    SciTech Connect (OSTI)

    Kumar, Yogesh Bern, Francis; Barzola-Quiquia, Jose; Lorite, Israel; Esquinazi, Pablo

    2015-07-13

    We report magnetotransport studies on microstructured ZnO film grown by pulsed laser deposition in N{sub 2} atmosphere on a-plane Al{sub 2}O{sub 3} substrates and the effect of low energy H{sup +}-implantation. Non-linearity has been found in the magnetic field dependent Hall resistance, which decreases with temperature. We explain this effect with a two-band model assuming the conduction through two different parallel channels having different types of charge carriers. Reduced non-linearity after H{sup +}-implantation in the grown film is due to the shallow-donor effect of hydrogen giving rise to an increment in the electron density, reducing the effect of the other channel.

  2. Dependence of inverse-spin Hall effect and spin-rectified voltage on tantalum thickness in Ta/CoFeB bilayer structure

    SciTech Connect (OSTI)

    Kim, Sang-Il; Seo, Min-Su; Park, Seung-Young; Kim, Dong-Jun; Park, Byong-Guk

    2015-01-19

    Ta-layer thickness (t{sub Ta}) dependence of the measured DC voltage V from the inverse-spin Hall effect (ISHE) in Ta/CoFeB bilayer structure is experimentally investigated using the ferromagnetic resonance in the TE{sub 011} resonant cavity. The ISHE signals excluding the spin-rectified effect (SRE) were separated from the fitted curve of V against t{sub Ta}. For t{sub Ta} ≈ λ{sub Ta} (Ta-spin diffusion length = 2.7 nm), the deviation in ISHE voltage V{sub ISH} between the experimental and theoretical values is significantly increased because of the large SRE contribution, which also results in a large deviation in the spin Hall angle θ{sub SH} (from 10% to 40%). However, when t{sub Ta} ≫ λ{sub Ta}, the V{sub ISH} values are consistent with theoretical values because the SRE terms become negligible, which subsequently improves the accuracy of the obtained θ{sub SH} within 4% deviation. The results will provide an outline for an accurate estimation of the θ{sub SH} for materials with small λ value, which would be useful for utilizing the spin Hall effect in a 3-terminal spintronic devices in which magnetization can be controlled by in-plane current.

  3. Comparison of Secondary Islands in Collisional Reconnection to Hall Reconnection

    SciTech Connect (OSTI)

    Shepherd, L. S.; Cassak, P. A.

    2010-07-02

    Large-scale resistive Hall-magnetohydrodynamic simulations of the transition from Sweet-Parker (collisional) to Hall (collisionless) magnetic reconnection are presented; the first to separate secondary islands from collisionless effects. Three main results are described. There exists a regime with secondary islands but without collisionless effects, and the reconnection rate is faster than Sweet-Parker, but significantly slower than Hall reconnection. This implies that secondary islands do not cause the fastest reconnection rates. The onset of Hall reconnection ejects secondary islands from the vicinity of the X line, implying that energy is released more rapidly during Hall reconnection. Coronal applications are discussed.

  4. WORKFORCE DIVERSITY TOWN HALL

    Energy Savers [EERE]

    ... fracturing our communities." Secretary Hillary Rodham Clinton WORKFORCE DIVERSITY TOWN HALL Agenda I. Welcome Mel Williams, Jr., Associate Deputy Secretary II. Opening Remarks Dr. ...

  5. Mary Hall Salishan

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    From Hall et al, "Maximizing Multiprocessor Performance with the SUIF Compiler", IEEE Computer, Dec. 1996. 50% higher Specfp95 ratio than previously reported 3 1990s View *...

  6. Anomalous Hall effect in epitaxial ferrimagnetic anti-perovskite Mn{sub 4−x}Dy{sub x}N films

    SciTech Connect (OSTI)

    Meng, M.; Wu, S. X. Zhou, W. Q.; Ren, L. Z.; Wang, Y. J.; Wang, G. L.; Li, S. W.

    2015-08-07

    Anomalous Hall effect (AHE) has been studied for ferrimagnetic antiperovskite Mn{sub 4−x}Dy{sub x}N films grown by molecular-beam epitaxy. The introduction of Dy changes the AHE dramatically, even changes its sign, while the variations in magnetization are negligible. Two sign reversals of the AHE (negative-positive-negative) are ascribed to the variation of charge carriers as a result of Fermi surface reconstruction. We further demonstrate that the AHE current J{sub AH} is dissipationless (independent of the scattering rate), by confirming that anomalous Hall conductivity, σ{sub AH}, is proportional to the carrier density n at 5 K. Our study may provide a route to further utilize antiperovskite manganese nitrides in spintronics.

  7. Y{sub 3}Fe{sub 5}O{sub 12} spin pumping for quantitative understanding of pure spin transport and spin Hall effect in a broad range of materials (invited)

    SciTech Connect (OSTI)

    Du, Chunhui; Wang, Hailong; Hammel, P. Chris; Yang, Fengyuan

    2015-05-07

    Using Y{sub 3}Fe{sub 5}O{sub 12} (YIG) thin films grown by our sputtering technique, we study dynamic spin transport in nonmagnetic, ferromagnetic, and antiferromagnetic (AF) materials by ferromagnetic resonance spin pumping. From both inverse spin Hall effect and damping enhancement, we determine the spin mixing conductance and spin Hall angle in many metals. Surprisingly, we observe robust spin conduction in AF insulators excited by an adjacent YIG at resonance. This demonstrates that YIG spin pumping is a powerful and versatile tool for understanding spin Hall physics, spin-orbit coupling, and magnetization dynamics in a broad range of materials.

  8. Plasmon modes of metallic nanowires including quantum nonlocal effects

    SciTech Connect (OSTI)

    Moradi, Afshin

    2015-03-15

    The properties of electrostatic surface and bulk plasmon modes of cylindrical metallic nanowires are investigated, using the quantum hydrodynamic theory of plasmon excitation which allows an analytical study of quantum tunneling effects through the Bohm potential term. New dispersion relations are obtained for each type of mode and their differences with previous treatments based on the standard hydrodynamic model are analyzed in detail. Numerical results show by considering the quantum effects, as the value of wave number increases, the surface modes are slightly red-shifted first and then blue-shifted while the bulk modes are blue-shifted.

  9. Quantum effects in electron beam pumped GaAs

    SciTech Connect (OSTI)

    Yahia, M. E.; National Institute of Laser Enhanced Sciences , Cairo University ; Azzouz, I. M.; Moslem, W. M.

    2013-08-19

    Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.

  10. Tunable Pseudogap Kondo Effect and Quantum Phase Transitions...

    Office of Scientific and Technical Information (OSTI)

    We study two quantum dots embedded in the arms of an Aharonov-Bohm ring threaded by a magnetic flux. This system can be described by an effective one-impurity Anderson model with ...

  11. Effective quantum dynamics of interacting systems with inhomogeneous coupling

    SciTech Connect (OSTI)

    Lopez, C. E.; Retamal, J. C.; Christ, H.; Solano, E.

    2007-03-15

    We study the quantum dynamics of a single mode (particle) interacting inhomogeneously with a large number of particles and introduce an effective approach to find the accessible Hilbert space, where the dynamics takes place. Two relevant examples are given: the inhomogeneous Tavis-Cummings model (e.g., N atomic qubits coupled to a single cavity mode, or to a motional mode in trapped ions) and the inhomogeneous coupling of an electron spin to N nuclear spins in a quantum dot.

  12. Hall A Annual Report 2013

    SciTech Connect (OSTI)

    Dalton, Mark M.

    2014-02-01

    Report over the experimental activities in Hall A at Thomas Jefferson National Accelerator Facility during 2013.

  13. Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Laroche, Dominique; Huang, ShiHsien; Nielsen, Erik; Liu, Chee Wee; Li, Jiun -Yun; Lu, Tzu -Ming

    2015-04-08

    We report the design, the fabrication, and the magneto-transport study of an electron bilayer system embedded in an undoped Si/SiGe double-quantum-well heterostructure. Additionally, the combined Hall densities (n Hall ) ranging from 2.6 × 1010 cm-2 to 2.7 × 1011 cm-2 were achieved, yielding a maximal combined Hall mobility (μHall ) of 7.7 × 105 cm2/(V • s) at the highest density. Simultaneous electron population of both quantum wells is clearly observed through a Hall mobility drop as the Hall density is increased to nHall > 3.3 × 1010 cm-2, consistent with Schrödinger-Poisson simulations. Furthermore, the integer and fractional quantummore » Hall effects are observed in the device, and single-layer behavior is observed when both layers have comparable densities, either due to spontaneous interlayer coherence or to the symmetric-antisymmetric gap.« less

  14. Electron effective mass in Al{sub 0.72}Ga{sub 0.28}N alloys determined by mid-infrared optical Hall effect

    SciTech Connect (OSTI)

    Schöche, S. Kühne, P.; Hofmann, T.; Schubert, M.; Nilsson, D.; Kakanakova-Georgieva, A.; Janzén, E.; Darakchieva, V.

    2013-11-18

    The effective electron mass parameter in Si-doped Al{sub 0.72}Ga{sub 0.28}N is determined to be m{sup ∗}=(0.336±0.020) m{sub 0} from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m{sup ∗}=0.232 m{sub 0} for GaN, an average effective electron mass of m{sup ∗}=0.376 m{sub 0} can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E{sub 1}(TO) and one phonon mode behavior of the A{sub 1}(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.

  15. Influence of Mn concentration on magnetic topological insulator MnxBi2−xTe3 thin-film Hall-effect sensor

    SciTech Connect (OSTI)

    Ni, Y.; Zhang, Z.; Nlebedim, I. C.; Hadimani, R. L.; Jiles, D. C.

    2015-06-11

    Hall-effect (HE) sensors based on high-quality Mn-doped Bi2Te3 topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi2Te3. The sensors with low Mn concentrations, MnxBi2-xTe3, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Hall sensitivity shows weak dependence on temperature. For sensors with high Mn concentration (x = 0.23), the Hall resistance with respect to magnetic field shows a hysteretic behavior. Moreover, its sensitivity shows almost eight times as high as that of the HE sensors with low Mn concentration. The highest sensitivity can reach 43 Ω/T at very low magnetic field. This increase of Hall sensitivity is caused by the occurrence of anomalous HE (AHE) after ferromagnetic phase transition. Our work indicates that the magnetic-element-doped TIs with AHE are good candidates for HE sensors.

  16. Photon energy dependence of photo-induced inverse spin-Hall effect in Pt/GaAs and Pt/Ge

    SciTech Connect (OSTI)

    Isella, Giovanni Bottegoni, Federico; Ferrari, Alberto; Finazzi, Marco; Ciccacci, Franco

    2015-06-08

    We report the photon energy dependence of photo-induced inverse spin Hall effect (ISHE) in Pt/GaAs and Pt/Ge Schottky junctions. The experimental results are compared with a spin drift-diffusion model, which highlights the role played by the different spin lifetime in the two semiconductors, in determining the energy dependence of the ISHE signal detected in the Pt layer. The good qualitative agreement between experiments and modelling indicates that photo-induced ISHE can be used as a tool to characterize spin lifetime in semiconductors.

  17. Hall Ammendment Policy

    Broader source: Energy.gov [DOE]

    Joint statement providing interim policy on processing proposals for leasing DOE real property using the authority in 42 U.S.C. 7256, commonly referred to as the "Hall Amendment."

  18. Jefferson Lab Experimental Hall B

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hall B Privacy and Security Notice Skip over navigation search Group Please upgrade your browser. This site's design is only visible in a graphical browser that supports web standards, but its content is accessible to any browser. Concerns? Hall B Navigation Hall B Main CLAS CLAS12 Other Expts Run Info Publications Public Interest print version Hall B Main CLAS Collaboration and Hall B CLAS Collaboration Information Phonebook, Opt-in, and Database Reviews and Service Work Login Working Groups

  19. Quantum effects in unimolecular reaction dynamics

    SciTech Connect (OSTI)

    Gezelter, J.D.

    1995-12-01

    This work is primarily concerned with the development of models for the quantum dynamics of unimolecular isomerization and photodissociation reactions. We apply the rigorous quantum methodology of a Discrete Variable Representation (DVR) with Absorbing Boundary Conditions (ABC) to these models in an attempt to explain some very surprising results from a series of experiments on vibrationally excited ketene. Within the framework of these models, we are able to identify the experimental signatures of tunneling and dynamical resonances in the energy dependence of the rate of ketene isomerization. Additionally, we investigate the step-like features in the energy dependence of the rate of dissociation of triplet ketene to form {sup 3}B{sub 1} CH{sub 2} + {sup 1}{sigma}{sup +} CO that have been observed experimentally. These calculations provide a link between ab initio calculations of the potential energy surfaces and the experimentally observed dynamics on these surfaces. Additionally, we develop an approximate model for the partitioning of energy in the products of photodissociation reactions of large molecules with appreciable barriers to recombination. In simple bond cleavage reactions like CH{sub 3}COCl {yields} CH{sub 3}CO + Cl, the model does considerably better than other impulsive and statistical models in predicting the energy distribution in the products. We also investigate ways of correcting classical mechanics to include the important quantum mechanical aspects of zero-point energy. The method we investigate is found to introduce a number of undesirable dynamical artifacts including a reduction in the above-threshold rates for simple reactions, and a strong mixing of the chaotic and regular energy domains for some model problems. We conclude by discussing some of the directions for future research in the field of theoretical chemical dynamics.

  20. Unexpected edge conduction in mercury telluride quantum wells under broken time-reversal symmetry

    SciTech Connect (OSTI)

    Ma, Eric Yue; Calvo, M. Reyes; Wang, Jing; Lian, Biao; Muhlbauer, Mathias; Brune, Christoph; Cui, Yong -Tao; Lai, Keji; Kundhikanjana, Worasom; Yang, Yongliang; Baenninger, Matthias; Konig, Markus; Ames, Christopher; Buhmann, Hartmut; Leubner, Philipp; Molenkamp, Laurens W.; Zhang, Shou -Cheng; Goldhaber-Gordon, David; Kelly, Michael A.; Shen, Zhi -Xun

    2015-05-26

    The realization of quantum spin Hall effect in HgTe quantum wells is considered a milestone in the discovery of topological insulators. Quantum spin Hall states are predicted to allow current flow at the edges of an insulating bulk, as demonstrated in various experiments. A key prediction yet to be experimentally verified is the breakdown of the edge conduction under broken time-reversal symmetry. Here we first establish a systematic framework for the magnetic field dependence of electrostatically gated quantum spin Hall devices. We then study edge conduction of an inverted quantum well device under broken time-reversal symmetry using microwave impedance microscopy, and compare our findings to a non-inverted device. At zero magnetic field, only the inverted device shows clear edge conduction in its local conductivity profile, consistent with theory. Surprisingly, the edge conduction persists up to 9 T with little change. Finally, this indicates physics beyond simple quantum spin Hall model, including material-specific properties and possibly many-body effects.

  1. Unexpected edge conduction in mercury telluride quantum wells under broken time-reversal symmetry

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ma, Eric Yue; Calvo, M. Reyes; Wang, Jing; Lian, Biao; Muhlbauer, Mathias; Brune, Christoph; Cui, Yong -Tao; Lai, Keji; Kundhikanjana, Worasom; Yang, Yongliang; et al

    2015-05-26

    The realization of quantum spin Hall effect in HgTe quantum wells is considered a milestone in the discovery of topological insulators. Quantum spin Hall states are predicted to allow current flow at the edges of an insulating bulk, as demonstrated in various experiments. A key prediction yet to be experimentally verified is the breakdown of the edge conduction under broken time-reversal symmetry. Here we first establish a systematic framework for the magnetic field dependence of electrostatically gated quantum spin Hall devices. We then study edge conduction of an inverted quantum well device under broken time-reversal symmetry using microwave impedance microscopy,more » and compare our findings to a non-inverted device. At zero magnetic field, only the inverted device shows clear edge conduction in its local conductivity profile, consistent with theory. Surprisingly, the edge conduction persists up to 9 T with little change. Finally, this indicates physics beyond simple quantum spin Hall model, including material-specific properties and possibly many-body effects.« less

  2. Micro-focused Brillouin light scattering study of the magnetization dynamics driven by Spin Hall effect in a transversely magnetized NiFe nanowire

    SciTech Connect (OSTI)

    Madami, M. Carlotti, G.; Gubbiotti, G.; Tacchi, S.; Siracusano, G.; Finocchio, G.; Carpentieri, M.

    2015-05-07

    We employed micro-focused Brillouin light scattering to study the amplification of the thermal spin wave eigenmodes by means of a pure spin current, generated by the spin-Hall effect, in a transversely magnetized Pt(4 nm)/NiFe(4 nm)/SiO{sub 2}(5 nm) layered nanowire with lateral dimensions 500 × 2750 nm{sup 2}. The frequency and the cross section of both the center (fundamental) and the edge spin wave modes have been measured as a function of the intensity of the injected dc electric current. The frequency of both modes exhibits a clear redshift while their cross section is greatly enhanced on increasing the intensity of the injected dc. A threshold-like behavior is observed for a value of the injected dc of 2.8 mA. Interestingly, an additional mode, localized in the central part of the nanowire, appears at higher frequency on increasing the intensity of the injected dc above the threshold value. Micromagnetic simulations were used to quantitatively reproduce the experimental results and to investigate the complex non-linear dynamics induced by the spin-Hall effect, including the modification of the spatial profile of the spin wave modes and the appearance of the extra mode above the threshold.

  3. Quantum effects in the dynamics of deeply supercooled water

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Agapov, Alexander L.; Kolesnikov, Alexander I.; Novikov, Vladimir N.; Richert, Ranko; Sokolov, Alexei P

    2015-02-26

    In spite of its simple chemical structure, water remains one of the most puzzling liquids with many anomalies at low temperatures. Combining neutron scattering and dielectric relaxation spectroscopy, we show that quantum fluctuations are not negligible in deeply supercooled water. Our dielectric measurements reveal the anomalously weak temperature dependence of structural relaxation in vapor-deposited water close to the glass transition temperature Tg~136K. We demonstrate that this anomalous behavior can be explained well by quantum effects. In conclusion, these results have significant implications for our understanding of water dynamics.

  4. Disorder-induced anomalously signed Hall effect in crystalline GeTe/Sb{sub 2}Te{sub 3} superlattice-like materials

    SciTech Connect (OSTI)

    Tong, H.; Yu, N. N.; Yang, Z.; Cheng, X. M.; Miao, X. S.

    2015-08-21

    Opposite to the almost persistent p-type conductivity of the crystalline chalcogenides along the GeTe-Sb{sub 2}Te{sub 3} tie line, n-type Hall mobility is observed in crystalline GeTe/Sb{sub 2}Te{sub 3} superlattice-like material (SLL) with a short period length. We suggest that this unusual carrier characteristic originates from the structural disorder introduced by the lattice strain and dangling bonds at the SLL interfaces, which makes the crystalline SLLs behave like the amorphous chalcogenides. Detailed structural disorder in crystalline SLL has been studied by Raman scattering, X-ray photoelectron spectroscopy, as well as Variable-energy positron annihilation spectroscopy measurements. First-principles calculations results show that this structural disorder gives rise to three-site junctions that dominate the charge transport as the period length decreases and result in the anomalously signed Hall effect in the crystalline SLL. Our findings indicate a similar tetrahedral structure in the amorphous and crystalline states of SLLs, which can significantly reduce the entropy difference. Due to the reduced entropy loss and increased resistivity of crystalline phase introduced by disorder, it is not surprising that the SLLs exhibit extremely lower RESET current and power consumption.

  5. Determination of the normal and anomalous hall effect coefficients in ferromagnetic Ni{sub 50}Mn{sub 35}In{sub 15-x}Si{sub x} Heusler alloys at the martensitic transformation

    SciTech Connect (OSTI)

    Granovskii, A. B. Prudnikov, V. N.; Kazakov, A. P.; Zhukov, A. P.; Dubenko, I. S.

    2012-11-15

    The magnetization, the electrical resistivity, the magnetoresistance, and the Hall resistivity of Ni{sub 50}Mn{sub 35}In{sub 15-x}Si{sub x} (x = 1.0, 3.0, 4.0) Heusler alloys are studied at T = 80-320 K. The martensitic transformation in these alloys occurs at T = 220-280 K from the high-temperature ferromagnetic austenite phase into the low-temperature martensite phase having a substantially lower magnetization. A method is proposed to determine the normal and anomalous Hall effect coefficients in the presence of magnetoresistance and a possible magnetization dependence of these coefficients. The resistivity of the alloys increases jumpwise during the martensitic transformation, reaches 150-200 {mu}{Omega} cm, and is almost temperature-independent. The normal Hall effect coefficient is negative, is higher than that of nickel by an order of magnitude at T = 80 K, decreases monotonically with increasing temperature, approaches zero in austenite, and does not undergo sharp changes in the vicinity of the martensitic transformation. At x = 3, a normal Hall effect nonlinear in magnetization is detected in the immediate vicinity of the martensitic transformation. The temperature dependences of the anomalous Hall effect coefficient in both martensite and austenite and, especially, in the vicinity of the martensitic transformation cannot be described in terms of the skew scattering, the side jump, and the Karplus-Lutinger mechanisms from the anomalous Hall effect theory. The possible causes of this behavior of the magnetotransport properties in Heusler alloys are discussed.

  6. Accelerating quantum instanton calculations of the kinetic isotope effects

    SciTech Connect (OSTI)

    Karandashev, Konstantin; Vaníček, Jiří

    2015-11-21

    Path integral implementation of the quantum instanton approximation currently belongs among the most accurate methods for computing quantum rate constants and kinetic isotope effects, but its use has been limited due to the rather high computational cost. Here, we demonstrate that the efficiency of quantum instanton calculations of the kinetic isotope effects can be increased by orders of magnitude by combining two approaches: The convergence to the quantum limit is accelerated by employing high-order path integral factorizations of the Boltzmann operator, while the statistical convergence is improved by implementing virial estimators for relevant quantities. After deriving several new virial estimators for the high-order factorization and evaluating the resulting increase in efficiency, using ⋅H{sub α} + H{sub β}H{sub γ} → H{sub α}H{sub β} + ⋅ H{sub γ} reaction as an example, we apply the proposed method to obtain several kinetic isotope effects on CH{sub 4} + ⋅ H ⇌ ⋅ CH{sub 3} + H{sub 2} forward and backward reactions.

  7. Experimental Hall C | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    C Jefferson Lab has four experimental halls. Hall C is 150 feet in diameter and 60 feet tall. Hall C houses a High Momentum Spectrometer and provides space for large-installation experiments. These are stand-alone experiments requiring unique or highly specialized detectors, magnets and targeting systems. The research equipment in Hall C is used to study the weak charge of the proton, form factors of simple quark systems, the transition from hadrons to quarks and nuclei with a strange quark

  8. Energy spectrum, dissipation, and spatial structures in reduced Hall magnetohydrodynamic

    SciTech Connect (OSTI)

    Martin, L. N.; Dmitruk, P.; Gomez, D. O.

    2012-05-15

    We analyze the effect of the Hall term in the magnetohydrodynamic turbulence under a strong externally supported magnetic field, seeing how this changes the energy cascade, the characteristic scales of the flow, and the dynamics of global magnitudes, with particular interest in the dissipation. Numerical simulations of freely evolving three-dimensional reduced magnetohydrodynamics are performed, for different values of the Hall parameter (the ratio of the ion skin depth to the macroscopic scale of the turbulence) controlling the impact of the Hall term. The Hall effect modifies the transfer of energy across scales, slowing down the transfer of energy from the large scales up to the Hall scale (ion skin depth) and carrying faster the energy from the Hall scale to smaller scales. The final outcome is an effective shift of the dissipation scale to larger scales but also a development of smaller scales. Current sheets (fundamental structures for energy dissipation) are affected in two ways by increasing the Hall effect, with a widening but at the same time generating an internal structure within them. In the case where the Hall term is sufficiently intense, the current sheet is fully delocalized. The effect appears to reduce impulsive effects in the flow, making it less intermittent.

  9. Modeling the Hall Thruster

    SciTech Connect (OSTI)

    Fisch, N.J.; Fruchtman, A.

    1998-08-01

    The acceleration of the plasma in the Hall thruster to supersonic velocities is examined by the use of a steady state model. Flows that are smooth across the sonic transition plane are found. The possibility of generating flows in which the acceleration across the sonic plane is abrupt, is also studied.

  10. Band structure effects on resonant tunneling in III-V quantum...

    Office of Scientific and Technical Information (OSTI)

    in III-V quantum wells versus two-dimensional vertical heterostructures Citation Details In-Document Search Title: Band structure effects on resonant tunneling in III-V quantum ...

  11. Experimental Hall A | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Jefferson Lab has four experimental halls. Hall A is the largest of these four experimental staging areas. It is 174 feet across and 80 feet tall from the floor to the highest spot on its domed ceiling. The foundation for the hall is 35 feet below ground. Hall A is outfitted with two primary detector systems - both high-resolution spectrometers, each weighing about 3 million pounds or 1,500 short tons. The hall is used primarily for experiments that study the structure of the nucleus and the

  12. Semiclassical states, effective dynamics, and classical emergence in loop quantum cosmology

    SciTech Connect (OSTI)

    Singh, Parampreet; Vandersloot, Kevin

    2005-10-15

    We construct physical semiclassical states annihilated by the Hamiltonian constraint operator in the framework of loop quantum cosmology as a method of systematically determining the regime and validity of the semiclassical limit of the quantum theory. Our results indicate that the evolution can be effectively described using continuous classical equations of motion with nonperturbative corrections down to near the Planck scale below which the Universe can only be described by the discrete quantum constraint. These results, for the first time, provide concrete evidence of the emergence of classicality in loop quantum cosmology and also clearly demarcate the domain of validity of different effective theories. We prove the validity of modified Friedmann dynamics incorporating discrete quantum geometry effects which can lead to various new phenomenological applications. Furthermore the understanding of semiclassical states allows for a framework for interpreting the quantum wave functions and understanding questions of a semiclassical nature within the quantum theory of loop quantum cosmology.

  13. Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

    SciTech Connect (OSTI)

    Korenev, V. V. Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.

    2013-10-15

    It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots.

  14. Observation of the Kondo effect in a spin-3/2 hole quantum dot (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Observation of the Kondo effect in a spin-3/2 hole quantum dot Citation Details In-Document Search Title: Observation of the Kondo effect in a spin-3/2 hole quantum dot We report the observation of the Kondo effect in a spin-3/2 hole quantum dot formed near pinch-off in a GaAs quantum wire. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the zero-bias peak in the differential conductance splits an in-plane magnetic field and the

  15. Cylindrical geometry hall thruster

    DOE Patents [OSTI]

    Raitses, Yevgeny; Fisch, Nathaniel J.

    2002-01-01

    An apparatus and method for thrusting plasma, utilizing a Hall thruster with a cylindrical geometry, wherein ions are accelerated in substantially the axial direction. The apparatus is suitable for operation at low power. It employs small size thruster components, including a ceramic channel, with the center pole piece of the conventional annular design thruster eliminated or greatly reduced. Efficient operation is accomplished through magnetic fields with a substantial radial component. The propellant gas is ionized at an optimal location in the thruster. A further improvement is accomplished by segmented electrodes, which produce localized voltage drops within the thruster at optimally prescribed locations. The apparatus differs from a conventional Hall thruster, which has an annular geometry, not well suited to scaling to small size, because the small size for an annular design has a great deal of surface area relative to the volume.

  16. Moderate positive spin Hall angle in uranium

    SciTech Connect (OSTI)

    Singh, Simranjeet; Anguera, Marta; Barco, Enrique del E-mail: cwmsch@rit.edu; Springell, Ross; Miller, Casey W. E-mail: cwmsch@rit.edu

    2015-12-07

    We report measurements of spin pumping and the inverse spin Hall effect in Ni{sub 80}Fe{sub 20}/uranium bilayers designed to study the efficiency of spin-charge interconversion in a super-heavy element. We employ broad-band ferromagnetic resonance on extended films to inject a spin current from the Ni{sub 80}Fe{sub 20} (permalloy) into the uranium layer, which is then converted into an electric field by the inverse spin Hall effect. Surprisingly, our results suggest a spin mixing conductance of order 2 × 10{sup 19} m{sup −2} and a positive spin Hall angle of 0.004, which are both merely comparable with those of several transition metals. These results thus support the idea that the electronic configuration may be at least as important as the atomic number in governing spin pumping across interfaces and subsequent spin Hall effects. In fact, given that both the magnitude and the sign are unexpected based on trends in d-electron systems, materials with unfilled f-electron orbitals may hold additional exploration avenues for spin physics.

  17. Experimental Hall B | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and electromagnetic calorimeters for electron and neutral particle identification. Major research programs in Hall B include experiments to measure the spectrum of excited ...

  18. ARM - Welcome to Study Hall

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Barrow, Alaska Tropical Western Pacific Site Tours Contacts Students Study Hall About ARM Global Warming FAQ Just for Fun Meet our Friends Cool Sites Teachers Teachers' Toolbox ...

  19. Directions to Wilson Hall, Fermilab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Wilson Hall, the central laboratory building of Fermi National Accelerator Laboratory, as shown on the map below. Ramsey Auditorium is located at the south end of Wilson ...

  20. Experimental Hall B | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    B Jefferson Lab has four experimental halls. Hall B is the smallest of the experimental staging areas. It is 98 feet in diameter and 65 feet from floor to ceiling. Experiments that take data in Hall B employ beams of either electrons or photons. From 1995 to 2012, the heart of the Hall B physics program involved the use of the CEBAF Large Acceptance Spectrometer, or CLAS. This detector system spanned nearly the full angular range about the target and was specifically developed for the study of

  1. Experimental Hall D | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    D A fourth experimental hall, known as Hall D, is currently under construction and is scheduled to begin experiments in 2015. The Hall D project consists of an extension to the accelerator tunnel to house a new beam transport line, a dedicated magnet to tag photons created in beam-target interactions, a counting house, cryogenics plant and service buildings. When it is completed, Hall D will make it possible for scientists to study what are known as exotic mesons or hybrids. You can learn more

  2. Study of cyclotron resonance and magneto-photoluminescence of n-type modulation doped InGaAs quantum well layers and their characterizations

    SciTech Connect (OSTI)

    Kotera, N.; Tanaka, K.; Jones, E.D.

    1997-06-01

    Two-dimensional natures of energy-band and the effective mass of conduction subband in narrow InGaAs/InAlAs quantum well layers have been clarified via magneto-photoluminescence, cyclotron resonance, Shubnikov-de Haas oscillations and quantum Hall effect, interband optical transmittance, and photoluminescence. Heavy effective masses of 0.07m{sub 0} were determined in 5- and 10-nm-wide quantum wells, which were 70% larger than the bulk bandedge mass, 0.041m{sub 0}. Sheet carrier concentration in the quantum wells was as high as 1 x 10{sup 12} cm{sup {minus}2}.

  3. Fourfold symmetric planar Hall effect in epitaxial La{sub 1−x}Sr{sub x}CoO{sub 3} thin films

    SciTech Connect (OSTI)

    Cui, W. Y.; Li, P.; Bai, H. L.

    2015-04-07

    The effect of Sr concentration on the planar Hall effect (PHE) in epitaxial magnetic phase separated La{sub 1−x}Sr{sub x}CoO{sub 3} (0.07 ≤ x ≤ 0.60) thin films was studied systematically. It was found that crystalline anisotropy and spin-orbital coupling are the main contributions to the unexpected fourfold symmetric PHE. The uniaxial anisotropy field was given by H{sub uni} = 70 Oe and cubic anisotropic field H{sub cub} = 143 Oe, respectively. The magnetic anisotropy was weakened by Sr doping, which corresponds with the disappearance of the fourfold symmetry in PHE with the increasing Sr concentration. The first principle calculations proved that the contribution of Co-d orbitals to the magnetic anisotropy strongly depends on the Sr concentration. e{sub g}−d{sub x{sup 2}−y{sup 2}} and e{sub g}−d{sub 3z{sup 2}−r{sup 2}} orbitals play a dominant role in the magnetic anisotropy of the samples with x = 0.125, 0.25, while the t{sub 2g}−d{sub xy}, d{sub yz}, d{sub xz} orbitals contribute mainly to the magnetic anisotropy of the samples with x = 0.375, 0.5, 0.625.

  4. Town Hall Questions Answered

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8, 2014 CBFO Manager's weekly update to local residents Read Carlsbad Field Office Manager Joe Franco's letter to Eddy and Lea County residents for the week of April 14: at http://1.usa.gov/1mkxm7b Town Hall Questions Answered Q. What is the condition of Panel 7 right now? A. Work teams entering the underground facility as part of ongoing Phase 3 activities are still working to determine the full condition of Panel 7. Initial entries indicate good roof conditions. Q. What's the presumed reason

  5. Forest County Potawatomi Community Wundar Hall Project

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... Wundar Hall Project Wundar Hall is a 34,000 sq ft building located on the former ... by the Tribe and taken into Trust in 1990. Wundar Hall is currently not in use. ...

  6. Semianalytical quantum model for graphene field-effect transistors

    SciTech Connect (OSTI)

    Pugnaghi, Claudio; Grassi, Roberto Gnudi, Antonio; Di Lecce, Valerio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio

    2014-09-21

    We develop a semianalytical model for monolayer graphene field-effect transistors in the ballistic limit. Two types of devices are considered: in the first device, the source and drain regions are doped by charge transfer with Schottky contacts, while, in the second device, the source and drain regions are doped electrostatically by a back gate. The model captures two important effects that influence the operation of both devices: (i) the finite density of states in the source and drain regions, which limits the number of states available for transport and can be responsible for negative output differential resistance effects, and (ii) quantum tunneling across the potential steps at the source-channel and drain-channel interfaces. By comparison with a self-consistent non-equilibrium Green's function solver, we show that our model provides very accurate results for both types of devices, in the bias region of quasi-saturation as well as in that of negative differential resistance.

  7. QER- Comment of Addison Hall

    Broader source: Energy.gov [DOE]

    I and my family own land in Ashfield next to the proposed Kinder Morgan/Tennessee Pipeline route. We are opposed to the pipeline for a variety of reasons, including the highly questionable need for the proposed commodity increase and the inevitable damage to the environment and communities along the proposed route. Addison Hall for the Hall Family Trust.

  8. Anthony Kathryn Hall | Open Energy Information

    Open Energy Info (EERE)

    Anthony Kathryn Hall Jump to: navigation, search Name: Anthony & Kathryn Hall Place: United Kingdom Sector: Wind energy Product: UK-based private wind farm in Highland. References:...

  9. Measurement of XeI and XeII velocity in the near exit plane of a low-power Hall effect thruster by light induced fluorescence spectroscopy

    SciTech Connect (OSTI)

    Dancheva, Y.; Biancalana, V.; Pagano, D.; Scortecci, F.

    2013-06-15

    Near exit plane non-resonant light induced fluorescence spectroscopy is performed in a Hall effect low-power Xenon thruster at discharge voltage of 250 V and anode flow rate of 0.7 mg/s. Measurements of the axial and radial velocity components are performed, exciting the 6s{sup 2}[3/2]{sub 2}{sup o}{yields}6p{sup 2}[3/2]{sub 2} transition at 823.16 nm in XeI and the 5d[4]{sub 7/2}{yields}6p[3]{sub 5/2}{sup o} transition at 834.724 nm in XeII. No significant deviation from the thermal velocity is observed for XeI. Two most probable ion velocities are registered at a given position with respect to the thruster axis, which are mainly attributed to different areas of creation of ions inside the acceleration channel. The spatial resolution of the set-up is limited by the laser beam size (radius of the order of 0.5 mm) and the fluorescence collection optics, which have a view spot diameter of 8 mm.

  10. Kondo effect in coupled quantum dots under magnetic fields

    SciTech Connect (OSTI)

    Aono, Tomosuke; Eto, Mikio

    2001-08-15

    The Kondo effect in coupled quantum dots is investigated theoretically under magnetic fields. We show that the magnetoconductance (MC) illustrates the peak structures of Kondo resonant spectra. When the dot-dot tunneling coupling V{sub C} is smaller than the dot-lead coupling {Delta} (level broadening), Kondo resonant levels appear at the Fermi level (E{sub F}). The Zeeman splitting of the levels weakens the Kondo effect, which results in a negative MC. When V{sub C} is larger than {Delta}, the Kondo resonances form bonding and antibonding levels, located below and above E{sub F}, respectively. We observe a positive MC since the Zeeman splitting increases the overlap between the levels at E{sub F}. In the presence of antiferromagnetic spin coupling between the dots, the sign of the MC can change as a function of the gate voltage.

  11. Effective Theory of Chiral Superfluids and Superconductors

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    They are of interest in different fields such as the physics of 3He, quantum Hall physics, unconventional superconductivity and topological quantum computing. In the first part of ...

  12. Magnetoelectric transport and quantum interference effect in ultrathin manganite films

    SciTech Connect (OSTI)

    Wang, Cong; Jin, Kui-juan Gu, Lin; Lu, Hui-bin; Li, Shan-ming; Zhou, Wen-jia; Zhao, Rui-qiang; Guo, Hai-zhong; He, Meng; Yang, Guo-zhen

    2014-04-21

    The magnetoelectric transport behavior with respect to the thicknesses of ultrathin La{sub 0.9}Sr{sub 0.1}MnO{sub 3} films is investigated in detail. The metal-insulator phase transition, which has never been observed in bulk La{sub 0.9}Sr{sub 0.1}MnO{sub 3}, is found in ultrathin films with thicknesses larger than 6 unit cells. Low-temperature resistivity minima appeared in films with thicknesses less than 10 unit cells. This is attributed to the presence of quantum interference effects. These data suggest that the influence of the weak localization becomes much pronounced as the film thickness decreases from 16 to 8 unit cells.

  13. Cost-Effective Fabrication Routes for the Production of Quantum...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Quantum-Well-Type Structures and Recovoery of Waste Heat from Heavy-Duty Trucks Thermoelectric Developments for Vehicular Applications Automotive Thermoelectric Generators and HVAC

  14. Science and Energy Town Hall

    Broader source: Energy.gov [DOE]

    Watch a live broadcast of the Science & Energy Town Hall on Wednesday, January 20, 2016 from 2:30 p.m. to 3:30 p.m. EST.

  15. Sec. Chu Online Town Hall

    Office of Energy Efficiency and Renewable Energy (EERE)

    Secretary Steven Chu hosted an online town hall to discuss the clean energy and innovation agenda President Obama laid out in his 2011 State of the Union address. (January 26, 2011)

  16. Experimental Hall C | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Hall C is used to study the weak charge of the proton, form factors of simple quark systems, the transition from hadrons to quarks and nuclei with a strange quark embedded....

  17. Piezoelectric effect in InAs/InP quantum rod nanowires grown on silicon substrate

    SciTech Connect (OSTI)

    Anufriev, Roman; Chauvin, Nicolas Bru-Chevallier, Catherine; Khmissi, Hammadi; Naji, Khalid; Gendry, Michel; Patriarche, Gilles

    2014-05-05

    We report on the evidence of a strain-induced piezoelectric field in wurtzite InAs/InP quantum rod nanowires. This electric field, caused by the lattice mismatch between InAs and InP, results in the quantum confined Stark effect and, as a consequence, affects the optical properties of the nanowire heterostructure. It is shown that the piezoelectric field can be screened by photogenerated carriers or removed by increasing temperature. Moreover, a dependence of the piezoelectric field on the quantum rod diameter is observed in agreement with simulations of wurtzite InAs/InP quantum rod nanowire heterostructures.

  18. Optimization of Cylindrical Hall Thrusters

    SciTech Connect (OSTI)

    Yevgeny Raitses, Artem Smirnov, Erik Granstedt, and Nathaniel J. Fi

    2007-07-24

    The cylindrical Hall thruster features high ionization efficiency, quiet operation, and ion acceleration in a large volume-to-surface ratio channel with performance comparable with the state-of-the-art annular Hall thrusters. These characteristics were demonstrated in low and medium power ranges. Optimization of miniaturized cylindrical thrusters led to performance improvements in the 50-200W input power range, including plume narrowing, increased thruster efficiency, reliable discharge initiation, and stable operation. __________________________________________________

  19. Optimization of Cylindrical Hall Thrusters

    SciTech Connect (OSTI)

    Yevgeny Raitses, Artem Smirnov, Erik Granstedt, and Nathaniel J. Fisch

    2007-11-27

    The cylindrical Hall thruster features high ionization efficiency, quiet operation, and ion acceleration in a large volume-to-surface ratio channel with performance comparable with the state-of-the-art annular Hall thrusters. These characteristics were demonstrated in low and medium power ranges. Optimization of miniaturized cylindrical thrusters led to performance improvements in the 50-200W input power range, including plume narrowing, increased thruster efficiency, reliable discharge initiation, and stable operation.

  20. Quantum fluctuations and isotope effects in ab initio descriptions of water

    SciTech Connect (OSTI)

    Wang, Lu; Markland, Thomas E.; Ceriotti, Michele

    2014-09-14

    Isotope substitution is extensively used to investigate the microscopic behavior of hydrogen bonded systems such as liquid water. The changes in structure and stability of these systems upon isotope substitution arise entirely from the quantum mechanical nature of the nuclei. Here, we provide a fully ab initio determination of the isotope exchange free energy and fractionation ratio of hydrogen and deuterium in water treating exactly nuclear quantum effects and explicitly modeling the quantum nature of the electrons. This allows us to assess how quantum effects in water manifest as isotope effects, and unravel how the interplay between electronic exchange and correlation and nuclear quantum fluctuations determine the structure of the hydrogen bond in water.

  1. Acceleration of positrons by a relativistic electron beam in the presence of quantum effects

    SciTech Connect (OSTI)

    Niknam, A. R.; Aki, H.; Khorashadizadeh, S. M.

    2013-09-15

    Using the quantum magnetohydrodynamic model and obtaining the dispersion relation of the Cherenkov and cyclotron waves, the acceleration of positrons by a relativistic electron beam is investigated. The Cherenkov and cyclotron acceleration mechanisms of positrons are compared together. It is shown that growth rate and, therefore, the acceleration of positrons can be increased in the presence of quantum effects.

  2. Induced spin-accumulation and spin-polarization in a quantum-dot ring by using magnetic quantum dots and Rashba spin-orbit effect

    SciTech Connect (OSTI)

    Eslami, L., E-mail: Leslami@iust.ac.ir; Faizabadi, E. [School of Physics, Iran University of Science and Technology, Tehran 16846 (Iran, Islamic Republic of)

    2014-05-28

    The effect of magnetic contacts on spin-dependent electron transport and spin-accumulation in a quantum ring, which is threaded by a magnetic flux, is studied. The quantum ring is made up of four quantum dots, where two of them possess magnetic structure and other ones are subjected to the Rashba spin-orbit coupling. The magnetic quantum dots, referred to as magnetic quantum contacts, are connected to two external leads. Two different configurations of magnetic moments of the quantum contacts are considered; the parallel and the anti-parallel ones. When the magnetic moments are parallel, the degeneracy between the transmission coefficients of spin-up and spin-down electrons is lifted and the system can be adjusted to operate as a spin-filter. In addition, the accumulation of spin-up and spin-down electrons in non-magnetic quantum dots are different in the case of parallel magnetic moments. When the intra-dot Coulomb interaction is taken into account, we find that the electron interactions participate in separation between the accumulations of electrons with different spin directions in non-magnetic quantum dots. Furthermore, the spin-accumulation in non-magnetic quantum dots can be tuned in the both parallel and anti-parallel magnetic moments by adjusting the Rashba spin-orbit strength and the magnetic flux. Thus, the quantum ring with magnetic quantum contacts could be utilized to create tunable local magnetic moments which can be used in designing optimized nanodevices.

  3. Effect of noise on time-dependent quantum chaos

    SciTech Connect (OSTI)

    Ott, E.; Antonsen T.M. Jr.; Hanson, J.D.

    1984-12-03

    The dynamics of a time-dependent quantum system can be qualitatively different from that of its classical counterpart when the latter is chaotic. It is shown that small noise can strongly alter this situation.

  4. Observation of the Kondo effect in a spin-3/2 hole quantum dot...

    Office of Scientific and Technical Information (OSTI)

    Citation Details In-Document Search Title: Observation of the Kondo effect in a spin-32 hole quantum dot We report the ... OSTI Identifier: 22261852 Resource Type: Journal Article ...

  5. Physics and modeling of an end-Hall (gridless) ion source

    SciTech Connect (OSTI)

    Oudini, N.; Hagelaar, G. J. M.; Boeuf, J.-P.; Garrrigues, L.

    2011-04-01

    In an end-Hall source, an ion beam is extracted from a magnetized plasma and accelerated by the plasma electric field without grids. The principle of end-Hall sources is similar to that of Hall effect thrusters (or closed-drift thrusters), but their design is optimized for processing applications (ion beam assisted deposition or substrate cleaning) rather than propulsion. The beam divergence is larger in end-Hall ion sources, and these sources can operate at low ion energies. Although end-Hall sources are commonly used in the surface processing industry, no detailed modeling of these sources is available, and their operation is quite empirical. In this paper, a self-consistent, two-dimensional, quasineutral model of an end-Hall ion source is developed and used in order to improve the understanding of the basic physics of these plasma sources and to quantify the parameters controlling the properties of the extracted ion beam.

  6. Cost-Effective Fabrication Routes for the Productionof Quantum-Well-Type

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Structures and Recovoery of Waste Heat from Heavy-Duty Trucks | Department of Energy Productionof Quantum-Well-Type Structures and Recovoery of Waste Heat from Heavy-Duty Trucks Cost-Effective Fabrication Routes for the Productionof Quantum-Well-Type Structures and Recovoery of Waste Heat from Heavy-Duty Trucks 2005 Diesel Engine Emissions Reduction (DEER) Conference Presentations and Posters 2005_deer_willigan.pdf (494.58 KB) More Documents & Publications Cost-Effective Fabrication

  7. Jefferson Lab Experimental Hall C

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    C Privacy and Security Notice Skip over navigation search Group This site's design is only visible in a graphical browser that supports web standards, but its content is accessible to any browser. Concerns? Hall C Navigation Users Public Interest print version HES, HKS and Splitter Qweak spectrometer used to measure proton weak charge 12 GeV Upgrade Upgrade information 12 GeV Experiments SHMS-HMS User's Group User's Group mailing list Newsletter 12 GeV wiki Hall C Collaboration Information

  8. Town Hall meeting | OpenEI Community

    Open Energy Info (EERE)

    picture Submitted by Graham7781(2017) Super contributor 16 November, 2012 - 11:23 LEDS the focus of Monday's 10 a.m. Town Hall Meeting LEDS Town Hall meeting What: OpenEI's...

  9. Simulation of quantum dots size and spacing effect for intermediate band solar cell application based on InAs quantum dots arrangement in GaAs

    SciTech Connect (OSTI)

    Hendra, P. I. B. Rahayu, F. Darma, Y.

    2014-03-24

    Intermediate band solar cell (IBSC) has become a promising technology in increasing solar cell efficiency. In this work we compare absorption coefficient profile between InAs quantum dots with GaAs bulk. We calculate the efficiency of GaAs bulk and GaAs doped with 2, 5, and 10 nm InAs quantum dot. Effective distances in quantum dot arrangement based on electron tunneling consideration were also calculated. We presented a simple calculation method with low computing power demand. Results showed that arrangement of quantum dot InAs in GaAs can increase solar cell efficiency from 23.9 % initially up to 60.4%. The effective distance between two quantum dots was found 2 nm in order to give adequate distance to prevent electron tunneling and wave functions overlap.

  10. Observation of the Kondo effect in a spin-3/2 hole quantum dot

    SciTech Connect (OSTI)

    Klochan, O.; Micolich, A. P.; Hamilton, A. R.; Trunov, K.; Reuter, D.; Wieck, A. D.

    2013-12-04

    We report the observation of the Kondo effect in a spin-3/2 hole quantum dot formed near pinch-off in a GaAs quantum wire. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the zero-bias peak in the differential conductance splits an in-plane magnetic field and the splitting is independent of gate voltage. Second, the splitting rate is twice as large as that for the lowest one-dimensional subband. We show that the Zeeman splitting of the zero-bias peak is highly anisotropic and attribute this to the strong spin-orbit interaction for holes in GaAs.

  11. Stability of Hall equilibria in neutron star crusts

    SciTech Connect (OSTI)

    Marchant, Pablo; Reisenegger, Andreas; Valdivia, Juan Alejandro; Hoyos, Jaime H.

    2014-12-01

    In the solid crusts of neutron stars, the advection of the magnetic field by the current-carrying electrons, an effect known as Hall drift, should play a very important role as the ions remain essentially fixed (as long as the solid does not break). Although Hall drift preserves the magnetic field energy, it has been argued that it may drive a turbulent cascade to scales at which ohmic dissipation becomes effective, allowing a much faster decay in objects with very strong fields. On the other hand, it has been found that there are 'Hall equilibria', i.e., field configurations that are unaffected by Hall drift. Here we address the crucial question of the stability of these equilibria through axially symmetric (two-dimensional (2D)) numerical simulations of Hall drift and ohmic diffusion, with the simplifying assumption of uniform electron density and conductivity. We demonstrate the 2D stability of a purely poloidal equilibrium, for which ohmic dissipation makes the field evolve toward an attractor state through adjacent stable configurations, around which damped oscillations occur. For this field, the decay scales with the ohmic timescale. We also study the case of an unstable equilibrium consisting of both poloidal and toroidal field components that are confined within the crust. This field evolves into a stable configuration, which undergoes damped oscillations superimposed on a slow evolution toward an attractor, just as the purely poloidal one.

  12. The effect of Coulomb interactions on thermoelectric properties of quantum dots

    SciTech Connect (OSTI)

    Zimbovskaya, Natalya A.

    2014-03-14

    Thermoelectric effects in a quantum dot coupled to the source and drain charge reservoirs are explored using a nonequilibrium Green's functions formalism beyond the Hartree-Fock approximation. Thermal transport is analyzed within a linear response regime. A transition from Coulomb blockade regime to Kondo regime in thermoelectric transport through a single-level quantum dot is traced using unified approximations for the relevant Green's functions.

  13. Quantum memristors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Pfeiffer, P.; Egusquiza, I. L.; Di Ventra, M.; Sanz, M.; Solano, E.

    2016-07-06

    Technology based on memristors, resistors with memory whose resistance depends on the history of the crossing charges, has lately enhanced the classical paradigm of computation with neuromorphic architectures. However, in contrast to the known quantized models of passive circuit elements, such as inductors, capacitors or resistors, the design and realization of a quantum memristor is still missing. Here, we introduce the concept of a quantum memristor as a quantum dissipative device, whose decoherence mechanism is controlled by a continuous-measurement feedback scheme, which accounts for the memory. Indeed, we provide numerical simulations showing that memory effects actually persist in the quantummore » regime. Our quantization method, specifically designed for superconducting circuits, may be extended to other quantum platforms, allowing for memristor-type constructions in different quantum technologies. As a result, the proposed quantum memristor is then a building block for neuromorphic quantum computation and quantum simulations of non-Markovian systems.« less

  14. Reconnection dynamics with secondary tearing instability in compressible Hall plasmas

    SciTech Connect (OSTI)

    Ma, Z. W. Wang, L. C.; Li, L. J.

    2015-06-15

    The dynamics of a secondary tearing instability is systematically investigated based on compressible Hall magnetohydrodynamic. It is found that in the early nonlinear phase of magnetic reconnection before onset of the secondary tearing instability, the geometry of the magnetic field in the reconnection region tends to form a Y-type structure in a weak Hall regime, instead of an X-type structure in a strong Hall regime. A new scaling law is found that the maximum reconnection rate in the early nonlinear stage is proportional to the square of the ion inertial length (γ∝d{sub i}{sup 2}) in the weak Hall regime. In the late nonlinear phase, the thin elongated current sheet associated with the Y-type geometry of the magnetic field breaks up to form a magnetic island due to a secondary tearing instability. After the onset of the secondary tearing mode, the reconnection rate is substantially boosted by the formation of the X-type geometries of magnetic field in the reconnection regions. With a strong Hall effect, the maximum reconnection rate linearly increases with the increase of the ion inertial length (γ∝d{sub i})

  15. Out-of-Equilibrium Kondo Effect in Double Quantum Dots

    SciTech Connect (OSTI)

    Aguado, Ramon; Langreth, David C.

    2000-08-28

    The out-of-equilibrium transport properties of a double quantum dot system in the Kondo regime are studied theoretically by means of a two-impurity Anderson Hamiltonian with interimpurity hopping. The Hamiltonian is solved by means of a nonequilibrium generalization of the slave-boson mean-field theory. It is demonstrated that measurements of the differential conductance dI/dV , for appropriate values of voltages and tunneling couplings, can give a direct observation of the coherent superposition between the many-body Kondo states of each dot. For large voltages and arbitrarily large interdot tunneling, there is a critical voltage above which the physical behavior of the system again resembles that of two decoupled quantum dots. (c) 2000 The American Physical Society.

  16. Nanoconstriction-based spin-Hall nano-oscillator

    SciTech Connect (OSTI)

    Demidov, V. E.; Urazhdin, S.; Zholud, A.; Sadovnikov, A. V.; Demokritov, S. O.

    2014-10-27

    We experimentally demonstrate magnetic nano-oscillators driven by pure spin current produced by the spin Hall effect in a bow tie-shaped nanoconstriction. These devices exhibit single-mode auto-oscillation and generate highly-coherent electronic microwave signals with a significant power and the spectral linewidth as low as 6.2 MHz at room temperature. The proposed simple and flexible device geometry is amenable to straightforward implementation of advanced spintronic structures such as chains of mutually coupled spin-Hall nano-oscillators.

  17. First-principles study on the relationship between magnetic anisotropy and anomalous Hall effect of bct-Fe{sub 50}Co{sub 50}

    SciTech Connect (OSTI)

    Hyodo, Kazushige Sakuma, Akimasa; Kota, Yohei

    2014-05-07

    We studied quantitative relationship between the intrinsic anomalous Hall conductivity (σ{sub xy}) and the uniaxial magnetic anisotropy constant (K{sub u}) of bct-Fe{sub 50}Co{sub 50} using first-principles calculation because these quantities originate from spin-orbit interaction. We found that the obtained σ{sub xy} and K{sub u} with changing the axial ratio c/a (1≤c/a≤√(2)) exhibit similar behavior mainly arising from the common band mixing of the minority-spin d{sub xy} and d{sub x{sup 2}−y{sup 2}} states near the Fermi level which is sensitive to c/a.

  18. A molecular dynamics study of nuclear quantum effect on the diffusion of hydrogen in condensed phase

    SciTech Connect (OSTI)

    Nagashima, Hiroki; Tokumasu, Takashi; Tsuda, Shin-ichi; Tsuboi, Nobuyuki; Koshi, Mitsuo; Hayashie, A. Koichi

    2014-10-06

    In this paper, the quantum effect of hydrogen molecule on its diffusivity is analyzed using Molecular Dynamics (MD) method. The path integral centroid MD (CMD) method is applied for the reproduction method of time evolution of the molecules. The diffusion coefficient of liquid hydrogen is calculated using the Green-Kubo method. The simulation is performed at wide temperature region and the temperature dependence of the quantum effect of hydrogen molecule is addressed. The calculation results are compared with those of classical MD results. As a result, it is confirmed that the diffusivity of hydrogen molecule is changed depending on temperature by the quantum effect. It is clarified that this result can be explained that the dominant factor by quantum effect on the diffusivity of hydrogen changes from the swollening the potential to the shallowing the potential well around 30 K. Moreover, it is found that this tendency is related to the temperature dependency of the ratio of the quantum kinetic energy and classical kinetic energy.

  19. Tunable Pseudogap Kondo Effect and Quantum Phase Transitions in Aharonov-Bohm Interferometers

    SciTech Connect (OSTI)

    Dias Da Silva, Luis G; Sandler, Nancy; Simon, Pascal; Ingersent, Kevin; Ulloa, Sergio E

    2009-01-01

    We study two quantum dots embedded in the arms of an Aharonov-Bohm ring threaded by a magnetic flux. This system can be described by an effective one-impurity Anderson model with an energy- and flux- dependent density of states. For specific values of the flux, this density of states vanishes at the Fermi energy, yielding a controlled realization of the pseudogap Kondo effect. The conductance and trans- mission phase shifts reflect a nontrivial interplay between wave interference and interactions, providing clear signatures of quantum phase transitions between Kondo and non-Kondo ground states.

  20. Jahn-Teller versus quantum effects in the spin-orbital material LuVO3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Skoulatos, M.; Toth, S.; Roessli, B.; Enderle, M.; Habicht, K.; Sheptyakov, D.; Cervellino, A.; Freeman, P. G.; Reehuis, M.; Stunault, A.; et al

    2015-04-13

    In this article, we report on combined neutron and resonant x-ray scattering results, identifying the nature of the spin-orbital ground state and magnetic excitations in LuVO3 as driven by the orbital parameter. In particular, we distinguish between models based on orbital-Peierls dimerization, taken as a signature of quantum effects in orbitals, and Jahn-Teller distortions, in favor of the latter. In order to solve this long-standing puzzle, polarized neutron beams were employed as a prerequisite in order to solve details of the magnetic structure, which allowed quantitative intensity analysis of extended magnetic-excitation data sets. The results of this detailed study enabledmore » us to draw definite conclusions about the classical versus quantum behavior of orbitals in this system and to discard the previous claims about quantum effects dominating the orbital physics of LuVO3 and similar systems.« less

  1. Enhancement of perpendicular magnetic anisotropy and transmission of spin-Hall-effect-induced spin currents by a Hf spacer layer in W/Hf/CoFeB/MgO layer structures

    SciTech Connect (OSTI)

    Pai, Chi-Feng; Nguyen, Minh-Hai; Vilela-Leão, Luis Henrique; Buhrman, R. A.; Belvin, Carina; Ralph, D. C.

    2014-02-24

    We report that strong perpendicular magnetic anisotropy of the ferromagnetic layer in a W/CoFeB/MgO multilayer structure can be established by inserting a Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also allows transmission of spin currents generated by an in-plane charge current in the W layer to apply strong spin torque on the CoFeB, thereby enabling current-driven magnetic switching. The antidamping-like and field-like components of the spin torque exerted on a 1 nm CoFeB layer are of comparable magnitudes in this geometry. Both components originate from the spin Hall effect in the underlying W layer.

  2. Magnetic field sensing beyond the standard quantum limit under the effect of decoherence

    SciTech Connect (OSTI)

    Matsuzaki, Yuichiro; Benjamin, Simon C.; Fitzsimons, Joseph

    2011-07-15

    Entangled states can potentially be used to outperform the standard quantum limit by which every classical sensor is bounded. However, entangled states are very susceptible to decoherence, and so it is not clear whether one can really create a superior sensor to classical technology via a quantum strategy which is subject to the effect of realistic noise. This paper presents an investigation of how a quantum sensor composed of many spins is affected by independent dephasing. We adopt general noise models including non-Markovian effects, and in these noise models the performance of the sensor depends crucially on the exposure time of the sensor to the field. We have found that, by choosing an appropriate exposure time within the non-Markovian time region, an entangled sensor does actually beat the standard quantum limit. Since independent dephasing is one of the most typical sources of noise in many systems, our results suggest a practical and scalable approach to beating the standard quantum limit.

  3. Henderson Hall's Education and Career Fair

    Broader source: Energy.gov [DOE]

    Location: Smith Gym, Henderson Hall, Arlington, VAPOC: Donna FriendWebsite: http://www.mccshh.com/EducationCareerFairFall2014.html

  4. Building Green in Greensburg: City Hall Building

    Broader source: Energy.gov [DOE]

    This poster highlights energy efficiency, renewable energy, and sustainable features of the high-performing City Hall building in Greensburg, Kansas.

  5. Rebuilding It Better: Greensburg, Kansas, City Hall

    SciTech Connect (OSTI)

    D. Egan

    2010-04-13

    This document showcases the LEED-Platinum designed Greensburg City Hall, which was rebuilt green, after a massive tornado destroyed Greensburg, Kansas in May 2007.

  6. Karpman-Washimi magnetization with electron-exchange effects in quantum plasmas

    SciTech Connect (OSTI)

    Hong, Woo-Pyo; Jamil, M.; Rasheed, A.; Jung, Young-Dae

    2015-07-15

    The influence of quantum electron-exchange on the Karpman-Washimi ponderomotive magnetization is investigated in quantum plasmas. The ponderomotive magnetization and the total radiation power due to the non-stationary Karpman-Washimi interaction related to the time-varying field intensity are obtained as functions of the de Broglie wave length, Debye length, and electron-exchange parameter. The result shows that the electron-exchange effect enhances the cyclotron frequency due to the ponderomotive interactions in quantum plasmas. It is also shown that the electron-exchange effect on the Karpman-Washimi magnetization increases with increasing wave number. In addition, the Karpman-Washimi magnetization and the total radiation power increase with an increase in the ratio of the Debye length to the de Broglie wave length. In streaming quantum plasmas, it is shown that the electron-exchange effect enhances the ponderomotive magnetization below the resonant wave number and, however, suppresses the ponderomotive magnetization above the resonant wave number. The variation of the Karpman-Washimi magnetization and the radiation power due to the variation of the electron-exchange effect and plasma parameters is also discussed.

  7. Non-singular bounce scenarios in loop quantum cosmology and the effective field description

    SciTech Connect (OSTI)

    Cai, Yi-Fu; Wilson-Ewing, Edward E-mail: wilson-ewing@phys.lsu.edu

    2014-03-01

    A non-singular bouncing cosmology is generically obtained in loop quantum cosmology due to non-perturbative quantum gravity effects. A similar picture can be achieved in standard general relativity in the presence of a scalar field with a non-standard kinetic term such that at high energy densities the field evolves into a ghost condensate and causes a non-singular bounce. During the bouncing phase, the perturbations can be stabilized by introducing a Horndeski operator. Taking the matter content to be a dust field and an ekpyrotic scalar field, we compare the dynamics in loop quantum cosmology and in a non-singular bouncing effective field model with a non-standard kinetic term at both the background and perturbative levels. We find that these two settings share many important properties, including the result that they both generate scale-invariant scalar perturbations. This shows that some quantum gravity effects of the very early universe may be mimicked by effective field models.

  8. Town Hall with Secretary Moniz

    ScienceCinema (OSTI)

    Energy Secretary Ernest Moniz; Deputy Secretary of Energy Daniel Poneman

    2013-07-25

    In a town hall meeting with Department staff, Energy Secretary Ernest Moniz spoke about his plans for a reorganization of the Energy Department?s management structure. The plans will help better achieve the Department?s key priorities and those of the President, including implementing the President?s Climate Action Plan, ?all of the above? energy strategy and nuclear security agenda. After his remarks, Moniz, joined by Deputy Secretary Dan Poneman, took questions from the audience in the Forrestal Auditorium as well as email questions from other Department locations.

  9. Portland State University Shattuck Hall

    High Performance Buildings Database

    Portland, OR Portland State's Shattuck hall was originally constructed as an elementary school in 1915. In 2007 the university undertook extensive renovations of the building to bring it up to current seismic requirements. In addition to structural improvements, the design team was able to upgraded the building's aging mechanical and electrical systems, upgrade plumbing, and restore the large light wells that bring daylight into the U-shaped building. The resulting building houses Portland State's Architecture department, where students are able to learn from the exposed building systems.

  10. Town Hall with Secretary Moniz

    SciTech Connect (OSTI)

    Energy Secretary Ernest Moniz; Deputy Secretary of Energy Daniel Poneman

    2013-07-18

    In a town hall meeting with Department staff, Energy Secretary Ernest Moniz spoke about his plans for a reorganization of the Energy Department’s management structure. The plans will help better achieve the Department’s key priorities and those of the President, including implementing the President’s Climate Action Plan, “all of the above” energy strategy and nuclear security agenda. After his remarks, Moniz, joined by Deputy Secretary Dan Poneman, took questions from the audience in the Forrestal Auditorium as well as email questions from other Department locations.