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Sample records for quantum dots improve

  1. Nontoxic quantum dot research improves solar cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nontoxic quantum dot research improves solar cells Nontoxic quantum dot research improves solar cells Solar cells made with low-cost, nontoxic copper-based quantum dots can achieve...

  2. Nontoxic quantum dot research improves solar cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJessework usesofPublications64NewsroomNontoxic quantum dot research improves

  3. Hierarchically Structured ZnO Nanorods-Nanosheets for Improved Quantum-Dot-Sensitized Solar Cells

    E-Print Network [OSTI]

    Cao, Guozhong

    Hierarchically Structured ZnO Nanorods-Nanosheets for Improved Quantum-Dot-Sensitized Solar Cells NR-NS photoelectrode for constructing CdS/ CdSe quantum-dot-sensitized solar cells (QDSCs). This hierarchical structure had two advantages in improving the power conversion efficiency (PCE) of the solar cells

  4. Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers

    E-Print Network [OSTI]

    Jalali. Bahram

    Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico optical, electrical, and spectral response characteristics of three-stack InAs/GaAs quantum dot solar

  5. Quantum Dots: Theory

    SciTech Connect (OSTI)

    Vukmirovic, Nenad; Wang, Lin-Wang

    2009-11-10

    This review covers the description of the methodologies typically used for the calculation of the electronic structure of self-assembled and colloidal quantum dots. These are illustrated by the results of their application to a selected set of physical effects in quantum dots.

  6. Improved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering by nanoparticles

    E-Print Network [OSTI]

    Yu, Edward T.

    of QDs in the context of our work is attractive for achieving long wavelength absorption in solar cells enhancement at all infrared wave- lengths in the device photocurrent spectrum. Epitaxial layer structuresImproved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering

  7. TiO2 Nanotubes with a ZnO Thin Energy Barrier for Improved Current Efficiency of CdSe Quantum-Dot-Sensitized Solar Cells

    SciTech Connect (OSTI)

    Lee, W.; Kang, S. H.; Kim, J. Y.; Kolekar, G. B.; Sung, Y. E.; Han, S. H.

    2009-01-01

    This paper reports the formation of a thin ZnO energy barrier between a CdSe quantum dot (Q dots) sensitizer and TiO{sub 2} nanotubes (TONTs) for improved current efficiency of Q dot-sensitized solar cells. The formation of a ZnO barrier between TONTs and the Q dot sensitizer increased the short-circuit current under illumination and also reduced the dark current in a dark environment. The power conversion efficiency of Q dot-sensitized TONT solar cells increased by 25.9% in the presence of the ZnO thin layer due to improved charge-collecting efficiency and reduced recombination.

  8. A quantum dot heterojunction photodetector

    E-Print Network [OSTI]

    Arango, Alexi Cosmos, 1975-

    2005-01-01

    This thesis presents a new device architecture for photodetectors utilizing colloidally grown quantum dots as the principle photo-active component. We implement a thin film of cadmium selenide (CdSe) quantum dot sensitizers, ...

  9. Surface treatment of nanocrystal quantum dots after film deposition

    DOE Patents [OSTI]

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

  10. Nanoscale engineering boosts performance of quantum dot light...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Quantum dot light emitting diodes Nanoscale engineering boosts performance of quantum dot light emitting diodes Quantum dots are nano-sized semiconductor particles whose emission...

  11. Promising future of quantum dots explored in conference

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Promising future of quantum dots explored Promising future of quantum dots explored in conference Researchers are gathering to reflect on two decades of quantum dot research at a...

  12. Improvement of the quality of graphene-capped InAs/GaAs quantum dots

    SciTech Connect (OSTI)

    Othmen, Riadh, E-mail: othmenriadh@yahoo.fr; Rezgui, Kamel; Ajlani, Hosni; Oueslati, Meherzi [Faculté des Sciences de Tunis, Université de Tunis El Manar, Campus, 2092 El Manar Tunis (Tunisia); Cavanna, Antonella; Madouri, Ali [CNRS/LPN, Route de Nozay, F-91460 Marcoussis (France); Arezki, Hakim; Gunes, Fethullah [Laboratoire de Génie Electrique de Paris, 11, rue Joliot Curie Plateau de Moulon, 91192 Gif sur Yvette (France)

    2014-06-07

    In this paper, we study the transfer of graphene onto InAs/GaAs quantum dots (QDs). The graphene is first grown on Cu foils by chemical vapor deposition and then polymer Polymethyl Methacrylate (PMMA) is deposited on the top of graphene/Cu. High quality graphene sheet has been obtained by lowering the dissolving rate of PMMA using vapor processing. Uncapped as well as capped graphene InAs/GaAs QDs have been studied using optical microscopy, scanning electron microscopy, and Raman spectroscopy. We gather from this that the average shifts ?? of QDs Raman peaks are reduced compared to those previously observed in graphene and GaAs capped QDs. The encapsulation by graphene makes the indium atomic concentration intact in the QDs by the reduction of the strain effect of graphene on QDs and the migration of In atoms towards the surface. This gives us a new hetero-structure graphene–InAs/GaAs QDs wherein the graphene plays a key role as a cap layer.

  13. All inorganic colloidal quantum dot LEDs

    E-Print Network [OSTI]

    Wood, Vanessa Claire

    2007-01-01

    This thesis presents the first colloidal quantum dot light emitting devices (QD-LEDs) with metal oxide charge transport layers. Colloidally synthesized quantum dots (QDs) have shown promise as the active material in ...

  14. Engineering a Robust Photovoltaic Device with Quantum Dots and Bacteriorhodopsin

    E-Print Network [OSTI]

    Renugopalakrishnan, Venkatesan

    We present a route toward a radical improvement in solar cell efficiency using resonant energy transfer and sensitization of semiconductor metal oxides with a light-harvesting quantum dot (QD)/bacteriorhodopsin (bR) layer ...

  15. Quantum Dot Light Emitting Diode

    SciTech Connect (OSTI)

    Keith Kahen

    2008-07-31

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m2, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  16. Quantum Dot Light Emitting Diode

    SciTech Connect (OSTI)

    Kahen, Keith

    2008-07-31

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m{sup 2}, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  17. & Vesicles |Hot Paper| Unilamellar Vesicles from Amphiphilic Graphene Quantum Dots

    E-Print Network [OSTI]

    Jelinek, Raz

    & Vesicles |Hot Paper| Unilamellar Vesicles from Amphiphilic Graphene Quantum Dots Sukhendu Nandi] Abstract: Graphene quantum dots (GQDs) have attracted considerable interest due to their unique Graphene quantum dots (GQDs) are carbon nanoparticles con- sisting of crystalline graphitic cores

  18. Sandia Energy - 'Giant' Nanocrystal Quantum Dots

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    'Giant' Nanocrystal Quantum Dots: A New Class of Optical Nanomaterials for Light Emission Applications (Video Pending) Speaker: Jennifer Hollingsworth, Los Alamos National...

  19. The Statistical Theory of Quantum Dots

    E-Print Network [OSTI]

    Y. Alhassid

    2001-02-15

    A quantum dot is a sub-micron-scale conducting device containing up to several thousand electrons. Transport through a quantum dot at low temperatures is a quantum-coherent process. This review focuses on dots in which the electron's dynamics are chaotic or diffusive, giving rise to statistical properties that reflect the interplay between one-body chaos, quantum interference, and electron-electron interactions. The conductance through such dots displays mesoscopic fluctuations as a function of gate voltage, magnetic field, and shape deformation. The techniques used to describe these fluctuations include semiclassical methods, random-matrix theory, and the supersymmetric nonlinear $\\sigma$ model. In open dots, the approximation of noninteracting quasiparticles is justified, and electron-electron interactions contribute indirectly through their effect on the dephasing time at finite temperature. In almost-closed dots, where conductance occurs by tunneling, the charge on the dot is quantized, and electron-electron interactions play an important role. Transport is dominated by Coulomb blockade, leading to peaks in the conductance that at low temperatures provide information on the dot's ground-state properties. Several statistical signatures of electron-electron interactions have been identified, most notably in the dot's addition spectrum. The dot's spin, determined partly by exchange interactions, can also influence the fluctuation properties of the conductance. Other mesoscopic phenomena in quantum dots that are affected by the charging energy include the fluctuations of the cotunneling conductance and mesoscopic Coulomb blockade.

  20. Temperature-Dependent Electron Transport in Quantum Dot Photovoltaics

    E-Print Network [OSTI]

    Padilla, Derek

    2013-01-01

    4.4 Photovoltaics in Practice . . . . . . . . . . . . . .milestones. Quantum dot photovoltaics is in the bottom-rightIN QUANTUM DOT PHOTOVOLTAICS A dissertation submitted in

  1. Enhanced Performance of CdS/CdSe Quantum Dot Cosensitized Solar Cells via Homogeneous Distribution of Quantum Dots in TiO2

    E-Print Network [OSTI]

    Cao, Guozhong

    , simply increasing film thickness did not make significant contribution to improving solar cell efficiencyEnhanced Performance of CdS/CdSe Quantum Dot Cosensitized Solar Cells via Homogeneous Distribution cosensitized solar cells. The CdS and CdSe quantum dots were prepared on TiO2 mesoporous film through

  2. Imaging Electrons in Few-Electron Quantum Dots

    E-Print Network [OSTI]

    Imaging Electrons in Few-Electron Quantum Dots A thesis presented by Parisa Fallahi to The Division Electrons in Few-Electron Quantum Dots Abstract Electrons in a one-electron quantum dot were imaged the tip-induced shift of the electron energy state in the dot. A technique for extracting the amplitude

  3. Quantum dots Orientation-Dependent Optical-Polarization Properties

    E-Print Network [OSTI]

    Quantum dots Orientation-Dependent Optical-Polarization Properties of Single Quantum Dots. Bakkers, Leo P. Kouwenhoven, and Val Zwiller Semiconductor quantum dots (QDs) are sources of single[1 studies, the InP section following dot growth was reduced, while for the samples used in our experiments

  4. Photodetectors based on colloidal quantum dots

    E-Print Network [OSTI]

    Oertel, David C. (David Charles)

    2007-01-01

    Inspired by recent work demonstrating photocurrent enhancement in quantum-dot (QD) solids via post-deposition chemical annealing and by recent successes incorporating single monolayers of QDs in light-emitting devices ...

  5. Synthesis and characterization of infrared quantum dots

    E-Print Network [OSTI]

    Harris, Daniel Kelly

    2014-01-01

    This thesis focuses on the development of synthetic methods to create application ready quantum dots (QDs) in the infrared for biological imaging and optoelectronic devices. I concentrated primarily on controlling the size ...

  6. Peptide coated quantum dots for biological applications

    E-Print Network [OSTI]

    2006-01-01

    23] W. C. W. Chan and S. M. Nie, “Quantum dot bioconjugatesThe resultant inorganic NIR QDOTs were also peptide-coatedInstitute of Health under Grant NIH 5 R01 EB000312. Asterisk

  7. First principle thousand atom quantum dot calculations

    SciTech Connect (OSTI)

    Wang, Lin-Wang; Li, Jingbo

    2004-03-30

    A charge patching method and an idealized surface passivation are used to calculate the single electronic states of IV-IV, III-V, II-VI semiconductor quantum dots up to a thousand atoms. This approach scales linearly and has a 1000 fold speed-up compared to direct first principle methods with a cost of eigen energy error of about 20 meV. The calculated quantum dot band gaps are parametrized for future references.

  8. Comparison of quantum confinement effects between quantum wires and dots

    SciTech Connect (OSTI)

    Li, Jingbo; Wang, Lin-Wang

    2004-03-30

    Dimensionality is an important factor to govern the electronic structures of semiconductor nanocrystals. The quantum confinement energies in one-dimensional quantum wires and zero-dimensional quantum dots are quite different. Using large-scale first-principles calculations, we systematically study the electronic structures of semiconductor (including group IV, III-V, and II-VI) surface-passivated quantum wires and dots. The band-gap energies of quantum wires and dots have the same scaling with diameter for a given material. The ratio of band-gap-increases between quantum wires and dots is material-dependent, and slightly deviates from 0.586 predicted by effective-mass approximation. Highly linear polarization of photoluminescence in quantum wires is found. The degree of polarization decreases with the increasing temperature and size.

  9. Thermoelectric transport through strongly correlated quantum dots

    E-Print Network [OSTI]

    T. A. Costi; V. Zlatic

    2010-07-08

    The thermoelectric properties of strongly correlated quantum dots, described by a single level Anderson model coupled to conduction electron leads, is investigated using Wilson's numerical renormalization group method. We calculate the electronic contribution, $K_{\\rm e}$, to the thermal conductance, the thermopower, $S$, and the electrical conductance, $G$, of a quantum dot as a function of both temperature, $T$, and gate voltage, ${\\rm v}_g$, for strong, intermediate and weak Coulomb correlations, $U$, on the dot. For strong correlations and in the Kondo regime, we find that the thermopower exhibits two sign changes, at temperatures $T_{1}({\\rm v}_g)$ and $T_{2}({\\rm v}_g)$ with $T_{1}< T_{2}$. Such sign changes in $S(T)$ are particularly sensitive signatures of strong correlations and Kondo physics. The relevance of this to recent thermopower measurements of Kondo correlated quantum dots is discussed. We discuss the figure of merit, power factor and the degree of violation of the Wiedemann-Franz law in quantum dots. The extent of temperature scaling in the thermopower and thermal conductance of quantum dots in the Kondo regime is also assessed.

  10. Hybrid mode-locking in a 40 GHz monolithic quantum dot laser G. Fiol,1,a

    E-Print Network [OSTI]

    Vladimirov, Andrei G.

    Hybrid mode-locking in a 40 GHz monolithic quantum dot laser G. Fiol,1,a D. Arsenijevi,1 D. Bimberg; accepted 30 November 2009; published online 5 January 2010 Hybrid mode-locking in monolithic quantum dot QD of hybrid mode-locking ML , a commonly used technique for improving quality of mode- locked pulses

  11. Mechanism for thermoelectric figure-of-merit enhancement in regimented quantum dot superlattices

    E-Print Network [OSTI]

    Mechanism for thermoelectric figure-of-merit enhancement in regimented quantum dot superlattices propose a mechanism for enhancement of the thermoelectric figure-of-merit in regimented quantum dot, as a result, to the thermoelectric figure-of-merit enhancement. To maximize the improvement, one has to tune

  12. Improving PbS Quantum Dot Solar Cell Power Conversion Efficiency to an NREL-Certified 4.4% (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-01-01

    Transition metal oxide improves overall efficiency and maintains performance with inexpensive metals. A research team at the National Renewable Energy Laboratory (NREL) has demonstrated that inserting a transition metal oxide (TMO) between the lead sulfide (PbS) quantum dot (QD) layer and the metal electrode eliminates the Schottky barrier that impedes efficient hole extraction and thereby improves the overall conversion efficiency. This allows for inexpensive metals such as Al to be employed without loss of performance. n-type TMOs consisting of molybdenum oxide (MoO{sub x}) and vanadium oxide (V{sub 2}O{sub x}) were used as an efficient hole extraction layer (HEL) in heterojunction ZnO/PbS QD solar cells. A 4.4% NREL-certified device was reported based on the MoO{sub x} HEL with Al as the back contact material, representing a more than 65% efficiency improvement compared with the case of Au contacting the PbS QD layer directly. The team finds the acting mechanism of the HEL to be a dipole formed at the MoO{sub x} and PbS interface, which enhances band bending to allow efficient hole extraction from the valence band of the PbS layer by MoO{sub x}. The carrier transport to the metal anode is likely enhanced through shallow gap states in the MoO{sub x} layer.

  13. Nanostructured architectures for colloidal quantum dot solar cells

    E-Print Network [OSTI]

    Jean, Joel, S.M. Massachusetts Institute of Technology

    2013-01-01

    This thesis introduces a novel ordered bulk heterojunction architecture for colloidal quantum dot (QD) solar cells. Quantum dots are solution-processed nanocrystals whose tunable bandgap energies make them a promising ...

  14. Electron tunneling and spin relaxation in a lateral quantum dot

    E-Print Network [OSTI]

    Amasha, Sami

    2008-01-01

    We report measurements that use real-time charge sensing to probe a single-electron lateral quantum dot. The charge sensor is a quantum point contact (QPC) adjacent to the dot and the sensitivity is comparable to other ...

  15. Quantum Dot-Based Cell Motility Assay

    SciTech Connect (OSTI)

    Gu, Weiwei; Pellegrino, Teresa; Parak Wolfgang J; Boudreau,Rosanne; Le Gros, Mark A.; Gerion, Daniele; Alivisatos, A. Paul; Larabell, Carolyn A.

    2005-06-06

    Because of their favorable physical and photochemical properties, colloidal CdSe/ZnS-semiconductor nanocrystals (commonly known as quantum dots) have enormous potential for use in biological imaging. In this report, we present an assay that uses quantum dots as markers to quantify cell motility. Cells that are seeded onto a homogeneous layer of quantum dots engulf and absorb the nanocrystals and, as a consequence, leave behind a fluorescence-free trail. By subsequently determining the ratio of cell area to fluorescence-free track area, we show that it is possible to differentiate between invasive and noninvasive cancer cells. Because this assay uses simple fluorescence detection, requires no significant data processing, and can be used in live-cell studies, it has the potential to be a powerful new tool for discriminating between invasive and noninvasive cancer cell lines or for studying cell signaling events involved in migration.

  16. Bilayer graphene quantum dot defined by topgates

    SciTech Connect (OSTI)

    Müller, André; Kaestner, Bernd; Hohls, Frank; Weimann, Thomas; Pierz, Klaus; Schumacher, Hans W., E-mail: hans.w.schumacher@ptb.de [Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany)

    2014-06-21

    We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK, the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.

  17. Single-dot optical emission from ultralow density well-isolated InP quantum dots

    SciTech Connect (OSTI)

    Ugur, A.; Hatami, F.; Masselink, W. T.; Vamivakas, A. N.; Lombez, L.; Atatuere, M.

    2008-10-06

    We demonstrate a straightforward way to obtain single well-isolated quantum dots emitting in the visible part of the spectrum and characterize the optical emission from single quantum dots using this method. Self-assembled InP quantum dots are grown using gas-source molecular-beam epitaxy over a wide range of InP deposition rates, using an ultralow growth rate of about 0.01 atomic monolayers/s, a quantum-dot density of 1 dot/{mu}m{sup 2} is realized. The resulting isolated InP quantum dots embedded in an InGaP matrix are individually characterized without the need for lithographical patterning and masks on the substrate. Such low-density quantum dots show excitonic emission at around 670 nm with a linewidth limited by instrument resolution. This system is applicable as a single-photon source for applications such as quantum cryptography.

  18. Scalable quantum computer architecture with coupled donor-quantum dot qubits

    DOE Patents [OSTI]

    Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey

    2014-08-26

    A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

  19. Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

    E-Print Network [OSTI]

    Ludwig-Maximilians-Universität, München

    Mechanical nanomanipulation of single strain-induced semiconductor quantum dots C. Obermu¨ller, A of single strain-induced Ga0.9In0.1As quantum dots. This was achieved by scanning a metal coated tapered of the dots2 owing to the lattice mismatch between the materials. In this case the InP islands are acting

  20. Mode Competition in Dual-Mode Quantum Dots Semiconductor Microlaser

    E-Print Network [OSTI]

    Chusseau, Laurent; Viktorovitch, P; Letartre, Xavier

    2013-01-01

    This paper describes the modeling of quantum dots lasers with the aim of assessing the conditions for stable cw dual-mode operation when the mode separation lies in the THz range. Several possible models suited for InAs quantum dots in InP barriers are analytically evaluated, in particular quantum dots electrically coupled through a direct exchange of excitation by the wetting layer or quantum dots optically coupled through the homogeneous broadening of their optical gain. A stable dual-mode regime is shown possible in all cases when quantum dots are used as active layer whereas a gain medium of quantum well or bulk type inevitably leads to bistable behavior. The choice of a quantum dots gain medium perfectly matched the production of dual-mode lasers devoted to THz generation by photomixing.

  1. Mode Competition in Dual-Mode Quantum Dots Semiconductor Microlaser

    E-Print Network [OSTI]

    Laurent Chusseau; Fabrice Philippe; P. Viktorovitch; Xavier Letartre

    2013-03-07

    This paper describes the modeling of quantum dots lasers with the aim of assessing the conditions for stable cw dual-mode operation when the mode separation lies in the THz range. Several possible models suited for InAs quantum dots in InP barriers are analytically evaluated, in particular quantum dots electrically coupled through a direct exchange of excitation by the wetting layer or quantum dots optically coupled through the homogeneous broadening of their optical gain. A stable dual-mode regime is shown possible in all cases when quantum dots are used as active layer whereas a gain medium of quantum well or bulk type inevitably leads to bistable behavior. The choice of a quantum dots gain medium perfectly matched the production of dual-mode lasers devoted to THz generation by photomixing.

  2. Geometric spin manipulation in semiconductor quantum dots

    SciTech Connect (OSTI)

    Prabhakar, Sanjay Melnik, Roderick; Inomata, Akira

    2014-04-07

    We propose a method to flip the spin completely by an adiabatic transport of quantum dots. We show that it is possible to flip the spin by inducing a geometric phase on the spin state of a quantum dot. We estimate the geometric spin flip time (approximately 2 ps) which turned out to be much shorter than the experimentally reported decoherence time (approximately 100 ns) that would provide an alternative means of fliping the spin before reaching decoherence. It is important that both the Rashba coupling and the Dresselhaus coupling are present for inducing a phase necessary for spin flip. If one of them is absent, the induced phase is trivial and irrelevant for spin-flip.

  3. Electronic structure of self-assembled InAs quantum dots in InP: An anisotropic quantum-dot system

    E-Print Network [OSTI]

    Ludwig-Maximilians-Universität, München

    Electronic structure of self-assembled InAs quantum dots in InP: An anisotropic quantum-dot system properties of InAs dots in GaAs for example, Refs. 1­3 and InP dots in GaxIn1 xP.4 An interesting quantum dot; revised manuscript received 9 March 1999 The electronic structure of self-assembled InAs quantum dots

  4. Deposition of colloidal quantum dots by microcontact printing for LED display technology

    E-Print Network [OSTI]

    Kim, LeeAnn

    2006-01-01

    This thesis demonstrates a new deposition method of colloidal quantum dots within a quantum dot organic light-emitting diode (QD-LED). A monolayer of quantum dots is microcontact printed as small as 20 ,Lm lines as well ...

  5. Sandia Energy - Research Challenge 2: Quantum Dots and Phosphors

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2: Quantum Dots and Phosphors Home Energy Research EFRCs Solid-State Lighting Science EFRC Our SSLS EFRC's Scientific Research Challenges and Publications Research Challenge 2:...

  6. Predicted Ultrafast Single Qubit Operations in Semiconductor Quantum Dots

    E-Print Network [OSTI]

    Pryor, C E

    2002-01-01

    Several recently proposed implementations of scalable quantum computation rely on the ability to manipulate the spin polarization of individual electrons in semiconductors. The most rapid single-spin-manipulation technique to date relies on the generation of an effective magnetic field via a spin-sensitive optical Stark effect. This approach has been used to split spin states in colloidal CdSe quantum dots and to manipulate ensembles of spins in ZnMnSe quantum wells with femtosecond optical pulses. Here we report that the process will produce a coherent rotation of spin in quantum dots containing a single electron. The calculated magnitude of the effective magnetic field depends on the dot bandgap and the strain. We predict that in InAs/InP dots, for reasonable experimental parameters, the magnitude of the rotation is sufficient and the intrinsic error is low enough for them to serve as elements of a quantum dot based quantum computer.

  7. Predicted Ultrafast Single Qubit Operations in Semiconductor Quantum Dots

    E-Print Network [OSTI]

    C. E. Pryor; M. E. Flatté

    2002-11-25

    Several recently proposed implementations of scalable quantum computation rely on the ability to manipulate the spin polarization of individual electrons in semiconductors. The most rapid single-spin-manipulation technique to date relies on the generation of an effective magnetic field via a spin-sensitive optical Stark effect. This approach has been used to split spin states in colloidal CdSe quantum dots and to manipulate ensembles of spins in ZnMnSe quantum wells with femtosecond optical pulses. Here we report that the process will produce a coherent rotation of spin in quantum dots containing a single electron. The calculated magnitude of the effective magnetic field depends on the dot bandgap and the strain. We predict that in InAs/InP dots, for reasonable experimental parameters, the magnitude of the rotation is sufficient and the intrinsic error is low enough for them to serve as elements of a quantum dot based quantum computer.

  8. Controlling quantum dot energies using submonolayer bandstructure engineering

    SciTech Connect (OSTI)

    Yu, L.; Law, S.; Wasserman, D.; Jung, D.; Lee, M. L.; Shen, J.; Cha, J. J.

    2014-08-25

    We demonstrate control of energy states in epitaxially-grown quantum dot structures formed by stacked submonolayer InAs depositions via engineering of the internal bandstructure of the dots. Transmission electron microscopy of the stacked sub-monolayer regions shows compositional inhomogeneity, indicative of the presence of quantum dots. The quantum dot ground state is manipulated not only by the number of deposited InAs layers, but also by control of the thickness and material composition of the spacing layers between submonolayer InAs depositions. In this manner, we demonstrate the ability to shift the quantum dot ground state energy at 77?K from 1.38?eV to 1.88?eV. The results presented offer a potential avenue towards enhanced control of dot energies for a variety of optoelectronic applications.

  9. Comment on "Analysis of quantum coherent semiconductor quantum dot p-i-n junction photovoltaic cells"

    E-Print Network [OSTI]

    Scully, Marlan O

    2010-01-01

    This is a comment on PRL paper by A.P. Kirk "Analysis of quantum coherent semiconductor quantum dot p-i-n junction photovoltaic cells"

  10. Design and fabrication of quantum-dot lasers

    E-Print Network [OSTI]

    Nabanja, Sheila

    2008-01-01

    Semiconductor lasers using quantum-dots in their active regions have been reported to exhibit significant performance advantages over their bulk semiconductor and quantum-well counterparts namely: low threshold current, ...

  11. Semiconductor Few-Electron Quantum Dots as Spin Qubits

    E-Print Network [OSTI]

    the experimental steps we have taken towards using a single electron spin, trapped in a semiconductor quantum dot detector is pushed to a faster regime (100 kHz), to detect single electron tunnel events in real time. WeSemiconductor Few-Electron Quantum Dots as Spin Qubits J.M. Elzerman1,2 , R. Hanson1 , L.H.W. van

  12. Hyperfine interactions in silicon quantum dots

    E-Print Network [OSTI]

    Assali, Lucy V C; Capaz, Rodrigo B; Koiller, Belita; Hu, Xuedong; Sarma, S Das

    2010-01-01

    We present an all-electron calculation of the hyperfine parameters for conduction electrons in Si, showing that: (i) all parameters scale linearly with the spin density at a $^{29}$Si site; (ii) the isotropic term is over 30 times larger than the anisotropic part; (iii) conduction electron charge density at a Si nucleus is consistent with experimental estimates; (iv) Overhauser fields in natural Si quantum dots (QDs) are two orders of magnitude smaller than in GaAs QDs. This reinforces the outstanding performance of Si in keeping spin coherence and opens access to reliable quantitative information aiming at spintronic applications.

  13. Numerical simulation of optical feedback on a quantum dot lasers

    SciTech Connect (OSTI)

    Al-Khursan, Amin H., E-mail: ameen_2all@yahoo.com [Thi-Qar University, Nassiriya Nanotechnology Research Laboratory (NNRL), Science College (Iraq); Ghalib, Basim Abdullattif [Babylon University, Laser Physics Department, Science College for Women (Iraq); Al-Obaidi, Sabri J. [Al-Mustansiriyah University, Physics Department, Science College (Iraq)

    2012-02-15

    We use multi-population rate equations model to study feedback oscillations in the quantum dot laser. This model takes into account all peculiar characteristics in the quantum dots such as inhomogeneous broadening of the gain spectrum, the presence of the excited states on the quantum dot and the non-confined states due to the presence of wetting layer and the barrier. The contribution of quantum dot groups, which cannot follow by other models, is simulated. The results obtained from this model show the feedback oscillations, the periodic oscillations which evolves to chaos at higher injection current of higher feedback levels. The frequency fluctuation is attributed mainly to wetting layer with a considerable contribution from excited states. The simulation shows that is must be not using simple rate equation models to express quantum dots working at excited state transition.

  14. Electron states in semiconductor quantum dots

    SciTech Connect (OSTI)

    Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.

    2014-11-28

    In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.

  15. Competing interactions in semiconductor quantum dots

    SciTech Connect (OSTI)

    van den Berg, R.; Brandino, G. P.; El Araby, O.; Konik, R. M.; Gritsev, V.; Caux, J. -S.

    2014-10-01

    We introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions at longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.

  16. Competing interactions in semiconductor quantum dots

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    van den Berg, R.; Brandino, G. P.; El Araby, O.; Konik, R. M.; Gritsev, V.; Caux, J. -S.

    2014-10-01

    We introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions at longer times. Onmore »the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.« less

  17. Photocurrent extraction efficiency in colloidal quantum dot photovoltaics

    SciTech Connect (OSTI)

    Kemp, K. W.; Wong, C. T. O.; Hoogland, S. H.; Sargent, E. H.

    2013-11-18

    The efficiency of photocurrent extraction was studied directly inside operating Colloidal Quantum Dot (CQD) photovoltaic devices. A model was derived from first principles for a thin film p-n junction with a linearly spatially dependent electric field. Using this model, we were able to clarify the origins of recent improvement in CQD solar cell performance. From current-voltage diode characteristics under 1 sun conditions, we extracted transport lengths ranging from 39 nm to 86 nm for these materials. Characterization of the intensity dependence of photocurrent extraction revealed that the dominant loss mechanism limiting the transport length is trap-mediated recombination.

  18. Quantum Dot Spin Cellular Automata for Realizing a Quantum Processor

    E-Print Network [OSTI]

    Abolfazl Bayat; Charles E. Creffield; John H. Jefferson; Michael Pepper; Sougato Bose

    2015-09-09

    We show how "single" quantum dots, each hosting a singlet-triplet qubit, can be placed in arrays to build a spin quantum cellular automaton. A fast ($\\sim 10$ ns) deterministic coherent singlet-triplet filtering, as opposed to current incoherent tunneling/slow-adiabatic based quantum gates (operation time $\\sim 300$ ns), can be employed to produce a two-qubit gate through capacitive (electrostatic) coupling that can operate over significant distances. This is the coherent version of the widely discussed charge and nano-magnet cellular automata and would offer speed, reduce dissipation, perform quantum computation, while interfacing smoothly with its classical counterpart. This combines the best of two worlds -- the coherence of spin pairs known from quantum technologies, and the strength and range of electrostatic couplings from the charge based classical cellular automata.

  19. Midwave infrared quantum dot avalanche photodiode David A. Ramirez,a

    E-Print Network [OSTI]

    Hayat, Majeed M.

    Midwave infrared quantum dot avalanche photodiode David A. Ramirez,a Jiayi Shao, Majeed M. Hayat . In the device, called the quantum dot avalanche photodiode, an intersubband quantum dots-in-a-well detector for any quantum dot detector. © 2010 American Institute of Physics. doi:10.1063/1.3520519 Single

  20. WIGNER MOLECULES IN SEMICONDUCTOR QUANTUM DOTS AND TRAPPED ULTRACOLD BOSONIC CLOUDS

    E-Print Network [OSTI]

    Yannouleas, Constantine

    WIGNER MOLECULES IN SEMICONDUCTOR QUANTUM DOTS AND TRAPPED ULTRACOLD BOSONIC CLOUDS Constantine], with a focus on the strongly correlated regime of electrons in two-dimensional semiconductor quantum dots (QDs dot [3]; (3) fractional-quantum-Hall-effect analogies and differences in graphene quantum dots at zero

  1. Photovoltaic quantum dot quantum cascade infrared photodetector A. V. Barve and S. Krishna

    E-Print Network [OSTI]

    Krishna, Sanjay

    Photovoltaic quantum dot quantum cascade infrared photodetector A. V. Barve and S. Krishna Citation subject to AIP license or copyright; see http://apl.aip.org/about/rights_and_permissions #12;Photovoltaic) Design and characterization of a quantum dot quantum cascade detector for photovoltaic midwave infrared

  2. Entanglement distribution for a practical quantum-dot-based quantum processor architecture

    E-Print Network [OSTI]

    Timothy P. Spiller; Irene D'Amico; Brendon W. Lovett

    2007-04-13

    We propose a quantum dot architecture for enabling universal quantum information processing. Quantum registers, consisting of arrays of vertically stacked self-assembled semiconductor quantum dots, are connected by chains of in-plane self-assembled dots. We propose an entanglement distributor, a device for producing and distributing maximally entangled qubits on demand, communicated through in-plane dot chains. This enables the transmission of entanglement to spatially separated register stacks, providing a resource for the realisation of a sizeable quantum processor built from coupled register stacks of practical size. Our entanglement distributor could be integrated into many of the present proposals for self-assembled quantum dot-based quantum computation. Our device exploits the properties of simple, relatively short, spin-chains and does not require microcavities. Utilizing the properties of self-assembled quantum dots, after distribution the entanglement can be mapped into relatively long lived spin qubits and purified, providing a flexible, distributed, off-line resource.

  3. L d l l f ti iLandau level formation inLandau level formation inLandau level formation in G h t d tGraphene quantum dotsGraphene quantum dotsGraphene quantum dots

    E-Print Network [OSTI]

    Rotter, Stefan

    Graphene quantum dotsGraphene quantum dotsGraphene quantum dots 1 2 Florian Libisch Stefan Rotter Johannes . 50nm graphene 0 2 0 2010 50nm graphene d k ] 0.2 quantum dot A K K' li Hydrogen-terminated yk V H q measure of K K tt i iCalculate parametric scattering inp evolution of L li d d f / h g experimentevolution

  4. Factorization of Dirac Equation and Graphene Quantum Dot

    E-Print Network [OSTI]

    Youness Zahidi; Ahmed Jellal; Hocine Bahlouli; Mohammed El Bouziani

    2014-05-14

    We consider a quantum dot described by a cylindrically symmetric 2D Dirac equation. The potentials representing the quantum dot are taken to be of different types of potential configuration, scalar, vector and pseudo-scalar to enable us to enrich our study. Using various potential configurations, we found that in the presence of a mass term an electrostatically confined quantum dot can accommodate true bound states, which is in agreement with previous work. The differential cross section associated with one specific potential configuration has been computed and discussed as function of the various potential parameters.

  5. Designing Small Silicon Quantum Dots with Low Reorganization Energy

    E-Print Network [OSTI]

    Zang, Xiaoning

    2015-01-01

    A first principles, excited state analysis is carried out to identify ways of producing silicon quantum dots with low excitonic reorganization energy. These focus on the general strategy of either reducing or constraining exciton-phonon coupling, and four approaches are explored. The results can be implemented in quantum dot solids to mitigate polaronic effects and increase the lifetime of coherent excitonic superpositions. It is demonstrated that such designs can also be used to alter the shape of the spectral density for reorganization so as to reduce the rates of both decoherence and dissipation. The results suggest that it may be possible to design quantum dot solids that support partially coherent exciton transport.

  6. Steering of a Bosonic Mode with a Double Quantum Dot

    E-Print Network [OSTI]

    T. Brandes; N. Lambert

    2003-02-13

    We investigate the transport and coherence properties of a double quantum dot coupled to a single damped boson mode. Our numerically results reveal how the properties of the boson distribution can be steered by altering parameters of the electronic system such as the energy difference between the dots. Quadrature amplitude variances and the Wigner function are employed to illustrate how the state of the boson mode can be controlled by a stationary electron current through the dots.

  7. Optimal tunneling enhances the quantum photovoltaic effect in double quantum dots

    E-Print Network [OSTI]

    Wang, Chen

    We investigate the quantum photovoltaic effect in double quantum dots by applying the nonequilibrium quantum master equation. A drastic suppression of the photovoltaic current is observed near the open circuit voltage, ...

  8. R&D Magazine: Windows into Solar Power Sources with Quantum Dots

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Dots R&D Magazine: Windows into Solar Power Sources with Quantum Dots A luminescent solar concentrator is an emerging sunlight harvesting technology that has the potential to...

  9. Quantum dot conjugates in a sub-micrometer fluidic channel

    DOE Patents [OSTI]

    Stavis, Samuel M.; Edel, Joshua B.; Samiee, Kevan T.; Craighead, Harold G.

    2010-04-13

    A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of selected wavelength was used to excite multiple species of quantum dots and organic molecules, and the emission spectra were resolved without significant signal rejection. Quantum dots were then conjugated with organic molecules and detected to demonstrate efficient multicolor detection. PCH was used to analyze coincident detection and to characterize the degree of binding. The use of a small fluidic channel to detect quantum dots as fluorescent labels was shown to be an efficient technique for multiplexed single molecule studies. Detection of single molecule binding events has a variety of applications including high throughput immunoassays.

  10. Hybrid organic/quantum dot thin film structures and devices

    E-Print Network [OSTI]

    Coe-Sullivan, Seth (Seth Alexander)

    2005-01-01

    Organic light emitting diodes have undergone rapid advancement over the course of the past decade. Similarly, quantum dot synthesis has progressed to the point that room temperature highly efficient photoluminescence can ...

  11. Quantum Dot Tracers for Use in Engineered Geothermal Systems

    Broader source: Energy.gov [DOE]

    DOE Geothermal Peer Review 2010 - Presentation. Project objective: To develop and demonstrate a new class of tracers?semiconductor nanoparticles(quantum dots)?that offer great promise for use in characterizing fracture networks in EGS reservoirs.

  12. Intrinsic phonon decoherence and quantum gates in coupled lateral quantum dot charge qubits

    E-Print Network [OSTI]

    Markus J. Storcz; Udo Hartmann; Sigmund Kohler; Frank K. Wilhelm

    2005-07-28

    Recent experiments by Hayashi et al. [Phys. Rev. Lett. 91, 226804 (2003)] demonstrate coherent oscillations of a charge quantum bit (qubit) in laterally defined quantum dots. We study the intrinsic electron-phonon decoherence and gate performance for the next step: a system of two coupled charge qubits. The effective decoherence model contains properties of local as well as collective decoherence. Decoherence channels can be classified by their multipole moments, which leads to different low-energy spectra. It is shown that due to the super-Ohmic spectrum, the gate quality is limited by the single-qubit Hadamard gates. It can be significantly improved, by using double-dots with weak tunnel coupling.

  13. Los Alamos Quantum Dots for Solar, Display Technology

    SciTech Connect (OSTI)

    Klimov, Victor

    2015-04-13

    Quantum dots are ultra-small bits of semiconductor matter that can be synthesized with nearly atomic precision via modern methods of colloidal chemistry. Their emission color can be tuned by simply varying their dimensions. Color tunability is combined with high emission efficiencies approaching 100 percent. These properties have recently become the basis of a new technology – quantum dot displays – employed, for example, in the newest generation of e-readers and video monitors.

  14. Fluorescence from a quantum dot and metallic nanosphere hybrid system

    SciTech Connect (OSTI)

    Schindel, Daniel G. [Department of Mathematics and Statistics, University of Winnipeg, 515 Portage Avenue, Winnipeg, MB, R3B 2E9 (Canada); Singh, Mahi R. [Department of Physics and Astronomy, University of Western Ontario, 1151 Richmond Street, London, ON, N6A 3K7 (Canada)

    2014-03-31

    We present energy absorption and interference in a quantum dot-metallic nanosphere system embedded on a dielectric substrate. A control field is applied to induce dipole moments in the nanosphere and the quantum dot, and a probe field is applied to monitor absorption. Dipole moments in the quantum dot or the metal nanosphere are induced, both by the external fields and by each other's dipole fields. Thus, in addition to direct polarization, the metal nanosphere and the quantum dot will sense one another via the dipole-dipole interaction. The density matrix method was used to show that the absorption spectrum can be split from one peak to two peaks by the control field, and this can also be done by placing the metal sphere close to the quantum dot. When the two are extremely close together, a self-interaction in the quantum dot produces an asymmetry in the absorption peaks. In addition, the fluorescence efficiency can be quenched by the addition of a metal nanosphere. This hybrid system could be used to create ultra-fast switching and sensing nanodevices.

  15. Atomic and Molecular Quantum Theory Course Number: C561 10 Quantum Confinement in "Quantum dots", Thomas Fermi

    E-Print Network [OSTI]

    Iyengar, Srinivasan S.

    "niche" area called quantum dots. 1. A quantum dot is a very small chunk of semiconductor material with quantum-like properties. These are any effects that the bulk form of the same material does not possess quantum mechanical proper- ties and discrete energy levels. 3. As a first approximation these materials

  16. Version 5; 7 October 1999 Quantum dots induced by strain from buried and surface stressors

    E-Print Network [OSTI]

    Davies, John H.

    induced by strain from buried, self-assembled dot InP stressor InGaAs quantum well GaAs substrate GaVersion 5; 7 October 1999 Quantum dots induced by strain from buried and surface stressors John H 93106­4170 (Dated: 8 November 1999) Abstract Quantum dots can be induced in a quantum well by strain

  17. Pauli-blocking imaging of single strain-induced semiconductor quantum dots

    E-Print Network [OSTI]

    Ludwig-Maximilians-Universität, München

    19 March 1999 The photoluminescence PL of InP strained-induced quantum dots in a GaInAs/GaAs quantumPauli-blocking imaging of single strain-induced semiconductor quantum dots C. Obermu¨ller, A of the electronic properties of self-assembled semiconductor quantum dots.2 High resolu- tion PL microscopy can

  18. Analysis of the efficiency of intermediate band solar cells based on quantum dot supercrystals

    SciTech Connect (OSTI)

    Heshmati, S; Golmohammadi, S; Abedi, K; Taleb, H

    2014-03-28

    We have studied the influence of the quantum-dot (QD) width and the quantum-dot conduction band (QD-CB) offset on the efficiency of quantum-dot intermediate band solar cells (QD-IBSCs). Simulation results demonstrate that with increasing QD-CB offset and decreasing QD width, the maximum efficiency is achieved. (laser applications and other topics in quantum electronics)

  19. Magnetic field induced quantum dot brightening in liquid crystal synergized magnetic and semiconducting nanoparticle composite assemblies

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Amaral, Jose Jussi; Wan, Jacky; Rodarte, Andrea L.; Ferri, Christopher; Quint, Makiko T.; Pandolfi, Ronald J.; Scheibner, Michael; Hirst, Linda S.; Ghosh, Sayantani

    2014-10-22

    The design and development of multifunctional composite materials from artificial nano-constituents is one of the most compelling current research areas. This drive to improve over nature and produce ‘meta-materials’ has met with some success, but results have proven limited with regards to both the demonstration of synergistic functionalities and in the ability to manipulate the material properties post-fabrication and in situ. Here, magnetic nanoparticles (MNPs) and semiconducting quantum dots (QDs) are co-assembled in a nematic liquid crystalline (LC) matrix, forming composite structures in which the emission intensity of the quantum dots is systematically and reversibly controlled with a small appliedmore »magnetic field (« less

  20. Colloidal Quantum Dot Solar Cells Exploiting Hierarchical Structuring Andre J. Labelle,

    E-Print Network [OSTI]

    Sargent, Edward H. "Ted"

    -tuned CQDs offer the prospect of readily fabricated tandem and multijunction cells to provide improvedColloidal Quantum Dot Solar Cells Exploiting Hierarchical Structuring Andre J. Labelle, Susanna M: Extremely thin-absorber solar cells offer low materials utilization and simplified manufacture but require

  1. Solution-processed colloidal quantum dot photovoltaics: A perspective Ratan Debnath,a

    E-Print Network [OSTI]

    Sargent, Edward H. "Ted"

    ) photovol- taic devices offer considerable promise as a third-generation photovoltaic candidateInGaSe2, offer dramatically improved costs per square meter, but at the price of lower efficiencies. Third-generationSolution-processed colloidal quantum dot photovoltaics: A perspective Ratan Debnath,a Osman Bakrbc

  2. Surface Induced Magnetism in Quantum Dots

    SciTech Connect (OSTI)

    Meulenberg, R W; Lee, J I

    2009-08-20

    The study of nanometer sized semiconductor crystallites, also known as quantum dots (QDs), has seen rapid advancements in recent years in scientific disciplines ranging from chemistry, physics, biology, materials science, and engineering. QD materials of CdSe, ZnSe, InP, as well as many others, can be prepared in the size range of 1-10 nm producing uniform, nearly monodisperse materials that are typically coated with organic molecules [1-3]. The strength of charge carrier confinement, which dictates the size-dependent properties, in these QDs depends on the nature of the material and can be correlated to the Bohr radius for the system of interest. For instance, the Bohr radius for CdSe is {approx} 5 nm, while in the more covalent structure of InP, the Bohr radius approaches {approx} 10 nm. The study of CdSe QDs has been particularly extensive during the last decade because they exhibit unique and tunable optical properties and are readily synthesized with high-crystallinity and narrow size dispersions. Although the core electronic properties of CdSe are explained in terms of the quantum confinement model, experimental efforts to elucidate the surface structure of these materials have been limited. Typically, colloidal CdSe QDs are coated with an organic surfactant, which typically consists of an organo-phosphine, -thiol, or -amine, that has the function of energetically relaxing defect states via coordination to partially coordinated surface atoms. The organic surfactant also acts to enhance carrier confinement and prevent agglomeration of the particles. Chemically, it has been shown that the bonding of the surfactant to the CdSe QD occurs through Cd atoms resulting cleavage of the Se atoms and formation of a Cd-rich (i.e. non-stoichiometric) particle [5].

  3. On-chip generation and guiding of quantum light from a site-controlled quantum dot

    SciTech Connect (OSTI)

    Jamil, Ayesha; Farrer, Ian; Griffiths, Jonathan P.; Jones, Geb A. C.; Ritchie, David A.; Skiba-Szymanska, Joanna; Kalliakos, Sokratis; Ward, Martin B.; Ellis, David J. P.; Shields, Andrew J.; Schwagmann, Andre; Brody, Yarden; Cambridge Research Laboratory, Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge, CB4 0GZ

    2014-03-10

    We demonstrate the emission and routing of single photons along a semiconductor chip originating from carrier recombination in an actively positioned InAs quantum dot. Device–scale arrays of quantum dots are formed by a two–step regrowth process. We precisely locate the propagating region of a unidirectional photonic crystal waveguide with respect to the quantum dot nucleation site. Under pulsed optical excitation, the multiphoton emission probability from the waveguide's exit is 12%?±?5% before any background correction. Our results are a major step towards the deterministic integration of a quantum emitter with the waveguiding components of photonic quantum circuits.

  4. Nonclassical Radiation from a Single Quantum Dot P. Michler1

    E-Print Network [OSTI]

    Buratto, Steve

    Nonclassical Radiation from a Single Quantum Dot P. Michler1 ) (a, b), A. Imamoglu (a), A. Kiraz (a nature of radiation and provides direct evi- dence that the emission source is a single two-level quantum of a single atom in an atomic beam [1] and from a single ion which has been stored in a radiofrequency trap [2

  5. Symmetry causes a huge conductance peak in double quantum dots

    E-Print Network [OSTI]

    Robert S. Whitney; P. Marconcini; M. Macucci

    2009-02-18

    We predict a huge interference effect contributing to the conductance through large ultra-clean quantum dots of chaotic shape. When a double-dot structure is made such that the dots are the mirror-image of each other, constructive interference can make a tunnel barrier located on the symmetry axis effectively transparent. We show (via theoretical analysis and numerical simulation) that this effect can be orders of magnitude larger than the well-known universal conductance fluctuations and weak-localization (both less than a conductance quantum). A small magnetic field destroys the effect, massively reducing the double-dot conductance; thus a magnetic field detector is obtained, with a similar sensitivity to a SQUID, but requiring no superconductors.

  6. Investigation of the Emission Properties of Quantum Dot-thermoresponsive Polymer Nanocomposite Hydrogels with Temperature 

    E-Print Network [OSTI]

    Juriani, Ameet Rajkumar

    2011-08-08

    This thesis presents a novel method for the preparation of quantum dot-thermoresponsive polymer nanocomposite hydrogels. The quantum dots (QD’s) were synthesized in a microwave reactor using a high temperature organometallic synthesis procedure...

  7. Size-Dependent Optoelectronic Properties and Controlled Doping of Semiconductor Quantum Dots

    E-Print Network [OSTI]

    Engel, Jesse Hart

    2013-01-01

    Quantum Dots by Jesse Hart Engel A dissertation submitted inCopyright 2013 by Jesse Hart Engel Abstract Size-DependentQuantum Dots by Jesse Hart Engel Doctor of Philosophy in

  8. Synthesis and structural characterization of ZnTe/ZnSe core/shell tunable quantum dots

    E-Print Network [OSTI]

    Guan, Juan

    2008-01-01

    Colloidal semiconductor nanocrystals or quantum dots have attracted much attention recently with their unique optical properties. Here we present a novel approach to synthesize ZnTe/ZnSe core/shell tunable quantum dots. ...

  9. Fabrication and optimization of light emitting devices with core-shell quantum dots

    E-Print Network [OSTI]

    Song, Katherine Wei

    2013-01-01

    Quantum dot light emitting devices (QD-LEDs) are promising options for the next generation of solid state lighting, color displays, and other optoelectronic applications. Overcoating quantum dots (QDs) -- semiconducting ...

  10. An Investigation on Gel Electrophoresis with Quantum Dots End-labeled DNA 

    E-Print Network [OSTI]

    Chen, Xiaojia

    2009-05-15

    explored manipulating DNA fragments by end labeling DNA molecules with quantum dot nanocrystals. The quantum dot-DNA conjugates can be further modified through binding interactions with biotinylated single-stranded DNA primers. Single molecule visualization...

  11. Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix

    DOE Patents [OSTI]

    Forrest, Stephen R. (Ann Arbor, MI)

    2008-08-19

    A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunneling barrier to require a charge carrier (an electron or a hole) at a base of the tunneling barrier in the organic matrix to perform quantum mechanical tunneling to reach the respective quantum dot. A first quantum state in each quantum dot is between a lowest unoccupied molecular orbital (LUMO) and a highest occupied molecular orbital (HOMO) of the organic matrix. Wave functions of the first quantum state of the plurality of quantum dots may overlap to form an intermediate band.

  12. A prototype silicon double quantum dot with dispersive microwave readout

    SciTech Connect (OSTI)

    Schmidt, A. R. Henry, E.; Namaan, O.; Siddiqi, I.; Lo, C. C.; Wang, Y.-T.; Bokor, J.; Yablonovitch, E.; Li, H.; Greenman, L.; Whaley, K. B.; Schenkel, T.

    2014-07-28

    We present a unique design and fabrication process for a lateral, gate-confined double quantum dot in an accumulation mode metal-oxide-semiconductor (MOS) structure coupled to an integrated microwave resonator. All electrostatic gates for the double quantum dot are contained in a single metal layer, and use of the MOS structure allows for control of the location of the two-dimensional electron gas via the location of the accumulation gates. Numerical simulations of the electrostatic confinement potential are performed along with an estimate of the coupling of the double quantum dot to the microwave resonator. Prototype devices are fabricated and characterized by transport measurements of electron confinement and reflectometry measurements of the microwave resonator.

  13. Physica E 34 (2006) 488492 Molecular states in a one-electron double quantum dot

    E-Print Network [OSTI]

    Ludwig-Maximilians-Universität, München

    2006-01-01

    2006 Abstract The transport spectrum of a strongly tunnel-coupled one-electron double quantum dot.20.Jc Keywords: Double quantum dot; Single electron tunneling; Delocalization; Molecular states of electrons trapped in a double quantum dot (DQD) down to N ¼ 1 [4­7]. Here, we study the transport spectrum

  14. Quantum dots and etch-induced depletion of a silicon two-dimensional electron gas

    E-Print Network [OSTI]

    Coppersmith, Susan N.

    Quantum dots and etch-induced depletion of a silicon two-dimensional electron gas L. J. Klein, K. L coupled quantum dots containing individual electrons whose spins act as qubits.4 We have made recent in a silicon quantum dot can be held constant for up to 11 hours. This fulfills an important milestone towards

  15. FEW ELECTRON QUANTUM DOTS IN InAs/InP CORE SHELL NANOWIRES

    E-Print Network [OSTI]

    Nygård, Jesper

    with a thin shell of InP, are explored as a system where a quantum dot can be defined and probed electricallyFEW ELECTRON QUANTUM DOTS IN InAs/InP CORE SHELL NANOWIRES By Shivendra Upadhyay Delft University . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.3 Quantum dots in disordered nanowires . . . . . . . . . . . . . . . . . 14 3 Fabrication 16 3

  16. Self-organized formation of quantum dots of a material on a substrate

    DOE Patents [OSTI]

    Zhang, Zhenyu (232 Long Bow Rd., Knoxville, TN 37922); Wendelken, John F. (925 Suwanee Rd., Knoxville, TN 37923); Chang, Ming-Che (F4-2, No. 178 Sec 5 Minsheng East Rd., Taipei, TW); Pai, Woei Wu (1F, No. 17, Alley 11, Lane 202, Ming Chyuan Rd., Pan Chou City, Taipei County, TW)

    2001-01-01

    Systems and methods are described for fabricating arrays of quantum dots. A method for making a quantum dot device, includes: forming clusters of atoms on a substrate; and charging the clusters of atoms such that the clusters of atoms repel one another. The systems and methods provide advantages because the quantum dots can be ordered with regard to spacing and/or size.

  17. Photovoltaic performance of ultra-small PbSe quantum dots

    E-Print Network [OSTI]

    Ma, Wanli

    2014-01-01

    Y; Alivisatos, AP, Photovoltaic Devices Employing TernaryPhotovoltaic performance of ultra-small PbSe quantum dotsquantum dot, solar cell, photovoltaic, quantum size effect

  18. Optical control of the emission direction of a quantum dot

    SciTech Connect (OSTI)

    Luxmoore, I. J.; Wasley, N. A.; Fox, A. M.; Skolnick, M. S.; Ramsay, A. J.; Thijssen, A. C. T.; Oulton, R.; Hugues, M.; CNRS-CRHEA, rue Bernard Grégory, 06560 Valbonne

    2013-12-09

    Using the helicity of a non-resonant excitation laser, control over the emission direction of an InAs/GaAs quantum dot is demonstrated. The quantum dot is located off-center in a crossed-waveguide structure, such that photons of opposite circular polarization are emitted into opposite waveguide directions. By preferentially exciting spin-polarized excitons, the direction of emission can therefore be controlled. The directional control is quantified by using the ratio of the intensity of the light coupled into the two waveguides, which reaches a maximum of ±35%.

  19. NANO EXPRESS Open Access Improvement of performance of InAs quantum

    E-Print Network [OSTI]

    Yu, Edward T.

    in this material system. Record effi- ciencies around 40% [2] are achieved in triple junction cells with an InNANO EXPRESS Open Access Improvement of performance of InAs quantum dot solar cell by inserting A new measure to enhance the performance of InAs quantum dot solar cell is proposed and measured. One

  20. Surround-gated vertical nanowire quantum dots M. H. M. van Weert,1

    E-Print Network [OSTI]

    arsenide phosphide InAsP quantum dots embedded in vertical surround-gated indium phosphide InP nanowires dots. The InAsP quantum dots, embedded in InP nanowires, are grown in the vapor-liquid-solid mode usingSurround-gated vertical nanowire quantum dots M. H. M. van Weert,1 M. den Heijer,1 M. P. van Kouwen

  1. Height control of self-assembled quantum dots by strain engineering during capping

    SciTech Connect (OSTI)

    Grossi, D. F., E-mail: d.grossi@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB, Eindhoven (Netherlands); Smereka, P. [Department of Mathematics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Keizer, J. G. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB, Eindhoven (Netherlands); Australian Research Council Centre of Excellence for Quantum Computation and Communications, School of Physics, University of New South Wales, Sydney 2052 (Australia); Ulloa, J. M. [Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politecnica de Madrid, Avenida Complutense 30, 28040 Madrid (Spain)

    2014-10-06

    Strain engineering during the capping of III-V quantum dots has been explored as a means to control the height of strained self-assembled quantum dots. Results of Kinetic Monte Carlo simulations are confronted with cross-sectional Scanning Tunnel Microscopy (STM) measurements performed on InAs quantum dots grown by molecular beam epitaxy. We studied InAs quantum dots that are capped by In{sub x}Ga{sub (1?x)}As layers of different indium compositions. Both from our realistic 3D kinetic Monte Carlo simulations and the X-STM measurements on real samples, a trend in the height of the capped quantum dot is found as a function of the lattice mismatch between the quantum dot material and the capping layer. Results obtained on additional material combinations show a generic role of the elastic energy in the control of the quantum dot morphology by strain engineering during capping.

  2. Hyperbolic metamaterials based on quantum-dot plasmon-resonator

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Hyperbolic metamaterials based on quantum-dot plasmon-resonator nanocomposites S. V. Zhukovsky,1, T function as multilayer hyperbolic metamateri- als. Depending on the thickness of the spacer between (2011)] and confirms that hyperbolic metamaterials are capable of increasing the radiative decay rate

  3. Quantum-Dot Cellular Automata SPICE Macro Model Northeastern University

    E-Print Network [OSTI]

    Ayers, Joseph

    and majority voter. A full-adder is designed with QCA cells using the SPICE model as a test vehicle describes a SPICE model development method- ology for Quantum-Dot Cellular Automata (QCA) cells and presents a SPICE model for QCA cells. The model is val- idated by simulating the basic logic gates such as inverter

  4. Folded-Light-Path Colloidal Quantum Dot Solar Cells

    E-Print Network [OSTI]

    Sargent, Edward H. "Ted"

    Folded-Light-Path Colloidal Quantum Dot Solar Cells Ghada I. Koleilat*, Illan J. Kramer*, Chris T-processed solar cells offer the promise of low cost, large-area processing, and, prospectively, high solar power solar cell performance20,21 . Results In the present work, we sought to increase the interaction

  5. Cavity Enhancement of Single Quantum Dot Emission in the Blue

    E-Print Network [OSTI]

    2009-12-27

    Abstract Cavity-enhanced single-photon emission in the blue spectral region was measured from single InGaN/GaN quantum dots. The low-Q microcavities used were characterized using micro-reflectance spectroscopy where the source was the enhanced blue...

  6. Quantum dot-based nanomaterials for biological imaging

    E-Print Network [OSTI]

    Zimmer, John P. (John Philip)

    2006-01-01

    Quantum dot-based fluorescent probes were synthesized and applied to biological imaging in two distinct size regimes: (1) 100-1000 nm and (2) < 10 nm in diameter. The larger diameter range was accessed by doping CdSe/ZnS ...

  7. Polarization entangled photons from quantum dots embedded in nanowires

    E-Print Network [OSTI]

    Tobias Huber; Ana Predojevi?; Milad Khoshnegar; Dan Dalacu; Philip J. Poole; Hamed Majedi; Gregor Weihs

    2014-06-02

    We present a first measurement of photon polarization entanglement from the biexciton to ground state cascade of a single InAsP quantum dot embedded in an InP nanowire. We observe a fidelity of 0.76(2) to a reference maximally entangled state as well as a concurrence of 0.57(6).

  8. Molecular Imaging: Physics and Bioapplications of Quantum Dots

    E-Print Network [OSTI]

    Michalet, Xavier

    the tech- niques used to interface these inorganic materials to the bio- logical world. It concludes 8.3.6 Lasers, LED, and Photovoltaic Cells 117 8.4 Synthesis of Colloidal Nanocrystals 119 8.4.1 Synthesis 119 8.4.2 Solubilization 120 8.4.3 Functionalization 121 8.5 Applications of Quantum Dot

  9. Depleted-Heterojunction Colloidal Quantum Dot Solar Cells

    E-Print Network [OSTI]

    Sargent, Edward H. "Ted"

    -processed single-junction cells and also multijunction architectures. Size-effect tuning also en- ables the useDepleted-Heterojunction Colloidal Quantum Dot Solar Cells Andras G. Pattantyus-Abraham,, Illan J requires thick, high-purity solar cells with correspondingly long carrier transport lengths;3 organic

  10. Statistical theory of Coulomb blockade oscillations: Quantum chaos in quantum dots

    SciTech Connect (OSTI)

    Jalabert, R.A.; Stone, A.D.; Alhassid, Y. (Center for Theoretical Physics, Sloane Physics Laboratory, Yale University, New Haven, Connecticut 06511 (United States))

    1992-06-08

    We develop a statistical theory of the amplitude of Coulomb blockade oscillations in semiconductor quantum dots based on the hypothesis that chaotic dynamics in the dot potential leads to behavior described by random-matrix theory. Breaking time-reversal symmetry is predicted to cause an experimentally observable change in the distribution of amplitudes. The theory is tested numerically and good agreement is found.

  11. Fluorescence resonance energy transfer measured by spatial photon migration in CdSe-ZnS quantum dots colloidal systems as a function of concentration

    SciTech Connect (OSTI)

    Azevedo, G.; Monte, A. F. G.; Reis, A. F.; Messias, D. N.

    2014-11-17

    The study of the spatial photon migration as a function of the concentration brings into attention the problem of the energy transfer in quantum dot embedded systems. By measuring the photon propagation and its spatial dependence, it is possible to understand the whole dynamics in a quantum dot system, and also improve their concentration dependence to maximize energy propagation due to radiative and non-radiative processes. In this work, a confocal microscope was adapted to scan the spatial distribution of photoluminescence from CdSe-ZnS core-shell quantum dots in colloidal solutions. The energy migration between the quantum dots was monitored by the direct measurement of the photon diffusion length, according to the diffusion theory. We observed that the photon migration length decreases by increasing the quantum dot concentration, this kind of behavior has been regarded as a signature of Förster resonance energy transfer in the system.

  12. Spins in few-electron quantum dots Center for Spintronics and Quantum Computation, University of California,

    E-Print Network [OSTI]

    Zumbühl, Dominik

    Spins in few-electron quantum dots R. Hanson* Center for Spintronics and Quantum Computation these subjects are directly relevant for the fields of quantum information processing and spintronics with single spins i.e., single spintronics . DOI: 10.1103/RevModPhys.79.1217 PACS number s : 73.63.Kv, 03.67.Lx, 85

  13. Lead Telluride Quantum Dot Solar Cells Displaying External Quantum Efficiencies Exceeding 120%

    E-Print Network [OSTI]

    Böhm, Marcus L.; Jellicoe, Tom C.; Tabachnyk, Maxim; Davis, Nathaniel J. L. K.; Wisnivesky-Rocca-Rivarola, Florencia; Ducati, Caterina; Ehrler, Bruno; Bakulin, Artem A.; Greenham, Neil C.

    2015-10-21

    Multiple exciton generation (MEG) in semiconducting quantum dots is a process which produces multiple charge-carrier pairs from a single excitation. MEG is a possible route to bypass the Shockley-Queisser limit in single-junction solar cells...

  14. Edge states in graphene quantum dots: Fractional quantum Hall effect analogies and differences at zero magnetic field

    E-Print Network [OSTI]

    Yannouleas, Constantine

    quantum Hall effect FQHE in two-dimensional 2D semiconductor heterostruc- tures in the presence of a high in finite 2D electronic systems, such as semiconductor quantum dots QDs under high B, ledEdge states in graphene quantum dots: Fractional quantum Hall effect analogies and differences

  15. Nanoscale optical positioning of single quantum dots for bright and pure single-photon emission

    E-Print Network [OSTI]

    Luca Sapienza; Marcelo Davanco; Antonio Badolato; Kartik Srinivasan

    2015-08-05

    Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth results in an essentially random in-plane spatial distribution of quantum dots, presenting a challenge in creating devices that exploit the strong interaction of single quantum dots with highly confined optical modes. Here, we present a photoluminescence imaging approach for locating single quantum dots with respect to alignment features with an average position uncertainty technology for the creation of optimized single quantum dot devices. To that end, we create quantum dot single-photon sources, based on a circular Bragg grating geometry, that simultaneously exhibit high collection efficiency (48 % +/- 5 % into a 0.4 numerical aperture lens, close to the theoretically predicted value of 50 %), low multiphoton probability (g(2)(0) <1 %), and a significant Purcell enhancement factor (~ 3).

  16. Final LDRD report : infrared detection and power generation using self-assembled quantum dots.

    SciTech Connect (OSTI)

    Cederberg, Jeffrey George; Ellis, Robert; Shaner, Eric Arthur

    2008-02-01

    Alternative solutions are desired for mid-wavelength and long-wavelength infrared radiation detection and imaging arrays. We have investigated quantum dot infrared photodetectors (QDIPs) as a possible solution for long-wavelength infrared (8 to 12 {mu}m) radiation sensing. This document provides a summary for work done under the LDRD 'Infrared Detection and Power Generation Using Self-Assembled Quantum Dots'. Under this LDRD, we have developed QDIP sensors and made efforts to improve these devices. While the sensors fabricated show good responsivity at 80 K, their detectivity is limited by high noise current. Following efforts concentrated on how to reduce or eliminate this problem, but with no clear path was identified to the desired performance improvements.

  17. NREL Certifies First All-Quantum-Dot Photovoltaic Cell; Demonstrates Stability, Performance (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-02-01

    Researchers at the National Renewable Energy Laboratory (NREL) have certified the first all-quantum-dot photovoltaic cell, which was based on lead sulfide and demonstrated reasonable quantum dot solar cell performance for an initial efficiency measurement along with good stability. The certified open-circuit voltage of the quantum dot cell is greater than that possible from bulk lead sulfide because of quantum confinement.

  18. High Efficiency Colloidal Quantum Dot Phosphors

    SciTech Connect (OSTI)

    Kahen, Keith

    2013-12-31

    The project showed that non-Cd containing, InP-based nanocrystals (semiconductor materials with dimensions of ~6 nm) have high potential for enabling next-generation, nanocrystal-based, on chip phosphors for solid state lighting. Typical nanocrystals fall short of the requirements for on chip phosphors due to their loss of quantum efficiency under the operating conditions of LEDs, such as, high temperature (up to 150 °C) and high optical flux (up to 200 W/cm2). The InP-based nanocrystals invented during this project maintain high quantum efficiency (>80%) in polymer-based films under these operating conditions for emission wavelengths ranging from ~530 to 620 nm. These nanocrystals also show other desirable attributes, such as, lack of blinking (a common problem with nanocrystals which limits their performance) and no increase in the emission spectral width from room to 150 °C (emitters with narrower spectral widths enable higher efficiency LEDs). Prior to these nanocrystals, no nanocrystal system (regardless of nanocrystal type) showed this collection of properties; in fact, other nanocrystal systems are typically limited to showing only one desirable trait (such as high temperature stability) but being deficient in other properties (such as high flux stability). The project showed that one can reproducibly obtain these properties by generating a novel compositional structure inside of the nanomaterials; in addition, the project formulated an initial theoretical framework linking the compositional structure to the list of high performance optical properties. Over the course of the project, the synthetic methodology for producing the novel composition was evolved to enable the synthesis of these nanomaterials at a cost approximately equal to that required for forming typical conventional nanocrystals. Given the above results, the last major remaining step prior to scale up of the nanomaterials is to limit the oxidation of these materials during the tens of thousands of hours of LED operation. Once the LED phosphor lifetime specifications are met, these nanocrystals will enable white LEDs for solid state lighting to simultaneously have increased efficiency and improved light quality, in addition to enabling the creation of custom light spectrums. These improvements to white LEDs will help accelerate the adoption of SSL, leading to large savings in US and worldwide energy costs.

  19. Charge transport in nanopatterned PbS colloidal quantum dot arrays

    E-Print Network [OSTI]

    Ray, Nirat

    2015-01-01

    In this thesis, we study charge transport in nanopatterned arrays of PbS colloidal quantum dots using conventional two-probe measurements and an integrated charge sensor. PbS dots are synthesized in solution with an organic ...

  20. Nanoparticle-induced light scattering for improved performance of quantum-well solar cells

    E-Print Network [OSTI]

    Yu, Edward T.

    in the application of semiconductor nanostructures, including quantum-well structures,1 nanowires,2 and quantum dots3Nanoparticle-induced light scattering for improved performance of quantum-well solar cells D performance of InP/InGaAsP quantum-well waveguide solar cells via light scattering from deposited dielectric

  1. Quasi-periodic quantum dot arrays produced by electrochemical synthesis

    SciTech Connect (OSTI)

    Bandyopadhyay, S.; Miller, A.E.; Yue, D.F.; Banerjee, G.; Ricker, R.E.; Jones, S.; Eastman, J.A.; Baugher, E.; Chandrasekhar, M.

    1994-06-01

    We discuss a ``gentle`` electrochemical technique for fabricating quasi-periodic quantum dot arrays. The technique exploits a self-organizing phenomenon to produce quasi-periodic arrangement of dots and provides excellent control over dot size and interdot spacing. Unlike conventional nanolithography, it does not cause radiation damage to the structures during exposure to pattern delineating beams (e-beam, ion-beam or x-ray). Moreover, it does not require harsh processing steps like reactive ion etching, offers a minimum feature size of {approximately}40 {angstrom}, allows the fabrication of structures on nonplanar surfaces (e.g. spherical or cylindrical substrates), is amenable to mass production (millions of wafers can be processed simultaneously) and is potentially orders of magnitude cheaper than conventional nanofabrication. In this paper, we describe our initial results and show the promise of this technique for low-cost and high-yield nanosynthesis.

  2. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

    SciTech Connect (OSTI)

    Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2011-07-15

    Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

  3. Charging dynamics of a floating gate transistor with site-controlled quantum dots

    SciTech Connect (OSTI)

    Maier, P. Hartmann, F.; Emmerling, M.; Schneider, C.; Höfling, S.; Kamp, M.; Worschech, L.

    2014-08-04

    A quantum dot memory based on a GaAs/AlGaAs quantum wire with site-controlled InAs quantum dots was realized by means of molecular beam epitaxy and etching techniques. By sampling of different gate voltage sweeps for the determination of charging and discharging thresholds, it was found that discharging takes place at short time scales of ?s, whereas several seconds of waiting times within a distinct negative gate voltage range were needed to charge the quantum dots. Such quantum dot structures have thus the potential to implement logic functions comprising charge and time dependent ingredients such as counting of signals or learning rules.

  4. Simulation of quantum dots size and spacing effect for intermediate band solar cell application based on InAs quantum dots arrangement in GaAs

    SciTech Connect (OSTI)

    Hendra, P. I. B. Rahayu, F. Darma, Y.

    2014-03-24

    Intermediate band solar cell (IBSC) has become a promising technology in increasing solar cell efficiency. In this work we compare absorption coefficient profile between InAs quantum dots with GaAs bulk. We calculate the efficiency of GaAs bulk and GaAs doped with 2, 5, and 10 nm InAs quantum dot. Effective distances in quantum dot arrangement based on electron tunneling consideration were also calculated. We presented a simple calculation method with low computing power demand. Results showed that arrangement of quantum dot InAs in GaAs can increase solar cell efficiency from 23.9 % initially up to 60.4%. The effective distance between two quantum dots was found 2 nm in order to give adequate distance to prevent electron tunneling and wave functions overlap.

  5. Optical, electronic, and structural properties of uncoupled and close-packed arrays of InP quantum dots

    SciTech Connect (OSTI)

    Micic, O.I.; Jones, K.M.; Cahill, A.; Nozik, A.J.

    1998-12-03

    Solid films consisting of close-packed arrays of InP quantum dots have been prepared by slowly evaporating colloidal solutions of InP quantum dots. The diameters of the quantum dots were controlled to be between about 30 to 60 {angstrom}; size-selective precipitation yielded a size distribution of about 10% about the mean diameter. The arrays show regions of hexagonal order, as well as disordered regions. Oxide layers can form irreversibly on the quantum dot surface and limit the effectiveness of the size-selective precipitation. Photoluminescence spectra obtained from close-packed films of InP quantum dots formed from quantum dots with a single mean diameter and from a mixture of two quantum dot sizes show that energy transfer occurs from the photoexcited smaller quantum dots to the larger quantum dots. The efficiency of this energy transfer process is high.

  6. Increased InAs quantum dot size and density using bismuth as a surfactant

    SciTech Connect (OSTI)

    Dasika, Vaishno D.; Krivoy, E. M.; Nair, H. P.; Maddox, S. J.; Park, K. W.; Yu, E. T.; Bank, S. R.; Jung, D.; Lee, M. L.

    2014-12-22

    We have investigated the growth of self-assembled InAs quantum dots using bismuth as a surfactant to control the dot size and density. We find that the bismuth surfactant increases the quantum dot density, size, and uniformity, enabling the extension of the emission wavelength with increasing InAs deposition without a concomitant reduction in dot density. We show that these effects are due to bismuth acting as a reactive surfactant to kinetically suppress the surface adatom mobility. This mechanism for controlling quantum dot density and size has the potential to extend the operating wavelength and enhance the performance of various optoelectronic devices.

  7. Quantum Interference Induced Photon Blockade in a Coupled Single Quantum Dot-Cavity System

    E-Print Network [OSTI]

    Jing Tang; Weidong Geng; Xiulai Xu

    2015-03-18

    We propose an experimental scheme to implement a strong photon blockade with a single quantum dot coupled to a nanocavity. The photon blockade effect can be tremendously enhanced by driving the cavity and the quantum dot simultaneously with two classical laser fields. This enhancement of photon blockade is ascribed to the quantum interference effect to avoid two-photon excitation of the cavity field. Comparing with Jaynes-Cummings model, the second-order correlation function at zero time delay $g^{(2)}(0)$ in our scheme can be reduced by two orders of magnitude and the system sustains a large intracavity photon number. A red (blue) cavity-light detuning asymmetry for photon quantum statistics with bunching or antibunching characteristics is also observed. The photon blockade effect has a controllable flexibility by tuning the relative phase between the two pumping laser fields and the Rabi coupling strength between the quantum dot and the pumping field. Moreover, the photon blockade scheme based on quantum interference mechanism does not require a strong coupling strength between the cavity and the quantum dot, even with the pure dephasing of the system. This simple proposal provides an effective way for potential applications in solid state quantum computation and quantum information processing.

  8. Single-electron shuttle based on a silicon quantum dot

    E-Print Network [OSTI]

    K. W. Chan; M. Mottonen; A. Kemppinen; N. S. Lai; K. Y. Tan; W. H. Lim; A. S. Dzurak

    2011-10-05

    We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source and to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency f_p. Current plateaus at integer levels of ef_p are observed up to f_p = 240 MHz operation frequencies. The observed results are explained by a sequential tunneling model which suggests that the electron gas may be heated substantially by the ac driving voltage.

  9. Facile synthesis and photoluminescence mechanism of graphene quantum dots

    SciTech Connect (OSTI)

    Yang, Ping; Zhou, Ligang; Zhang, Shenli; Pan, Wei Shen, Wenzhong; Wan, Neng

    2014-12-28

    We report a facile hydrothermal synthesis of intrinsic fluorescent graphene quantum dots (GQDs) with two-dimensional morphology. This synthesis uses glucose, concentrate sulfuric acid, and deionized water as reagents. Concentrated sulfuric acid is found to play a key role in controlling the transformation of as-prepared hydrothermal products from amorphous carbon nanodots to well-crystallized GQDs. These GQDs show typical absorption characteristic for graphene, and have nearly excitation-independent ultraviolet and blue intrinsic emissions. Temperature-dependent PL measurements have demonstrated strong electron-electron scattering and electron-phonon interactions, suggesting a similar temperature behavior of GQDs to inorganic semiconductor quantum dots. According to optical studies, the ultraviolet emission is found to originate from the recombination of electron-hole pairs localized in the C=C bonds, while the blue emission is from the electron transition of sp{sup 2} domains.

  10. Resonant scattering of surface plasmon polaritons by dressed quantum dots

    SciTech Connect (OSTI)

    Huang, Danhong; Cardimona, Dave; Easter, Michelle; Gumbs, Godfrey; Maradudin, A. A.; Lin, Shawn-Yu; Zhang, Xiang

    2014-06-23

    The resonant scattering of surface plasmon-polariton waves (SPP) by embedded semiconductor quantum dots above the dielectric/metal interface is explored in the strong-coupling regime. In contrast to non-resonant scattering by a localized dielectric surface defect, a strong resonant peak in the spectrum of the scattered field is predicted that is accompanied by two side valleys. The peak height depends nonlinearly on the amplitude of SPP waves, reflecting the feedback dynamics from a photon-dressed electron-hole plasma inside the quantum dots. This unique behavior in the scattered field peak strength is correlated with the occurrence of a resonant dip in the absorption spectrum of SPP waves due to the interband photon-dressing effect. Our result on the scattering of SPP waves may be experimentally observable and applied to spatially selective illumination and imaging of individual molecules.

  11. Induced spin-accumulation and spin-polarization in a quantum-dot ring by using magnetic quantum dots and Rashba spin-orbit effect

    SciTech Connect (OSTI)

    Eslami, L., E-mail: Leslami@iust.ac.ir; Faizabadi, E. [School of Physics, Iran University of Science and Technology, Tehran 16846 (Iran, Islamic Republic of)

    2014-05-28

    The effect of magnetic contacts on spin-dependent electron transport and spin-accumulation in a quantum ring, which is threaded by a magnetic flux, is studied. The quantum ring is made up of four quantum dots, where two of them possess magnetic structure and other ones are subjected to the Rashba spin-orbit coupling. The magnetic quantum dots, referred to as magnetic quantum contacts, are connected to two external leads. Two different configurations of magnetic moments of the quantum contacts are considered; the parallel and the anti-parallel ones. When the magnetic moments are parallel, the degeneracy between the transmission coefficients of spin-up and spin-down electrons is lifted and the system can be adjusted to operate as a spin-filter. In addition, the accumulation of spin-up and spin-down electrons in non-magnetic quantum dots are different in the case of parallel magnetic moments. When the intra-dot Coulomb interaction is taken into account, we find that the electron interactions participate in separation between the accumulations of electrons with different spin directions in non-magnetic quantum dots. Furthermore, the spin-accumulation in non-magnetic quantum dots can be tuned in the both parallel and anti-parallel magnetic moments by adjusting the Rashba spin-orbit strength and the magnetic flux. Thus, the quantum ring with magnetic quantum contacts could be utilized to create tunable local magnetic moments which can be used in designing optimized nanodevices.

  12. A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots

    E-Print Network [OSTI]

    D. M. Zajac; T. M. Hazard; X. Mi; K. Wang; J. R. Petta

    2015-02-05

    We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

  13. Computational models for the berry phase in semiconductor quantum dots

    SciTech Connect (OSTI)

    Prabhakar, S. Melnik, R. V. N.; Sebetci, A.

    2014-10-06

    By developing a new model and its finite element implementation, we analyze the Berry phase low-dimensional semiconductor nanostructures, focusing on quantum dots (QDs). In particular, we solve the Schrödinger equation and investigate the evolution of the spin dynamics during the adiabatic transport of the QDs in the 2D plane along circular trajectory. Based on this study, we reveal that the Berry phase is highly sensitive to the Rashba and Dresselhaus spin-orbit lengths.

  14. Reducing charge trapping in PbS colloidal quantum dot solids

    SciTech Connect (OSTI)

    Balazs, D. M.; Nugraha, M. I.; Bisri, S. Z.; Loi, M. A., E-mail: m.a.loi@rug.nl [Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747AG (Netherlands); Sytnyk, M.; Heiss, W. [Institute for Semiconductor and Solid State Physics, University of Linz, Altenbergerstr. 69, Linz 4040 (Austria)

    2014-03-17

    Understanding and improving charge transport in colloidal quantum dot solids is crucial for the development of efficient solar cells based on these materials. In this paper, we report high performance field-effect transistors based on lead-sulfide colloidal quantum dots (PbS CQDs) crosslinked with 3-mercaptopropionic acid (MPA). Electron mobility up to 0.03 cm{sup 2}/Vs and on/off ratio above 10{sup 5} was measured; the later value is the highest in the literature for CQD Field effect transistors with silicon-oxide gating. This was achieved by using high quality material and preventing trap generation during fabrication and measurement. We show that air exposure has a reversible p-type doping effect on the devices, and that intrinsically MPA is an n-type dopant for PbS CQDs.

  15. Surface acoustic wave controlled carrier injection into self-assembled quantum dots and quantum posts

    E-Print Network [OSTI]

    Hubert J. Krenner; Stefan Völk; Florian J. R. Schülein; Florian Knall; Achim Wixforth; Dirk Reuter; Andreas D. Wieck; Hyochul Kim; Tuan A. Truong; Pierre M. Petroff

    2011-10-20

    We report on recent progress in the acousto-electrical control of self-assembled quantum dot and quantum post using radio frequency surface acoustic waves (SAWs). We show that the occupancy state of these optically active nanostructures can be controlled via the SAW-induced dissociation of photogenerated excitons and the resulting sequential bipolar carrier injection which strongly favors the formation of neutral excitons for quantum posts in contrast to conventional quantum dots. We demonstrate high fidelity preparation of the neutral biexciton which makes this approach suitable for deterministic entangled photon pair generation. The SAW driven acoustic charge conveyance is found to be highly efficient within the wide quantum well surrounding the quantum posts. Finally we present the direct observation of acoustically triggered carrier injection into remotely positioned, individual quantum posts which is required for a low-jitter SAW-triggered single photon source.

  16. Semiconductor quantum dots enhanced graphene/CdTe heterostructure solar cells by photo-induced doping

    E-Print Network [OSTI]

    Li, Xiaoqiang; Wang, Peng; Xu, Zhijuan; Zhong, Huikai; Wu, Zhiqian; Lin, Shisheng

    2015-01-01

    Photo-induced doping is employed into graphene based solar cell through designing of a novel type of solar cell based on graphene/CdTe Schottky heterostructure. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe heterostructure, the performance of the graphene/CdTe solar cell is improved by about 50%. Photo-induced doping is mainly accounted for this enhancement, as evidenced by resistance, photoluminescence and quantum efficiency measurements. This work demonstrates a general and feasible way of designing novel type of solar cells based on two dimensional materials/semiconductor heterostructures.

  17. Formation of long-range ordered quantum dots arrays in amorphous matrix by ion beam irradiation

    SciTech Connect (OSTI)

    Buljan, M.; Bogdanovic-Radovic, I.; Karlusic, M.; Desnica, U. V.; Radic, N.; Dubcek, P.; Drazic, G.; Salamon, K.; Bernstorff, S.; Holy, V.

    2009-08-10

    We demonstrate the production of a well ordered three-dimensional array of Ge quantum dots in amorphous silica matrix. The ordering is achieved by ion beam irradiation and annealing of a multilayer film. Structural analysis shows that quantum dots nucleate along the direction of the ion beam used for irradiation, while the mutual distance of the quantum dots is determined by the diffusion properties of the multilayer material rather than the distances between traces of ions that are used for irradiation.

  18. Photoluminescence spectral study of single CdSe/ZnS Colloidal Nanocrystals in Poly(methyl methacrylate) and Quantum Dots molecules

    E-Print Network [OSTI]

    Shen, Yaoming

    2008-01-01

    in self- assembled inp quantum dots in gainp. Phys. Rev. B,in self-assembled inp quantum dots. Phys. Rev. Lett. , 86(also been observed in InP quantum dots in a Ga x In 1?x P

  19. Investigation of quantum confinement behavior of zinc sulphide quantum dots synthesized via various chemical methods

    SciTech Connect (OSTI)

    Jose, Meera, E-mail: gunasekaran@karunya.edu; Sakthivel, T., E-mail: gunasekaran@karunya.edu; Chandran, Hrisheekesh T., E-mail: gunasekaran@karunya.edu; Nivea, R., E-mail: gunasekaran@karunya.edu; Gunasekaran, V., E-mail: gunasekaran@karunya.edu [Nanomaterials Research Lab, Department of Nanoscience and Technology, Karunya University, Coimbatore - 641 114, Tamil Nadu (India)

    2014-10-15

    In this work, undoped and Ag-doped ZnS quantum dots were synthesized using various chemical methods. The products were characterized using X-ray diffraction (XRD), UV-visible spectroscopy and Photoluminescence spectroscopy. Our results revealed that the size of the as-prepared samples range from 1–6 nm in diameter and have a cubic zinc-blende structure. Also, we observed the emission of different wavelength of light from different sized quantum dots of the same material due to quantum confinement effect. The results will be presented in detail and ZnS can be a potential candidate for optical device development and applications.

  20. A Graphene Quantum Dot with a Single Electron Transistor as Integrated Charge Sensor

    E-Print Network [OSTI]

    Ling-Jun Wang; Gang Cao; Tao Tu; Hai-Ou Li; Cheng Zhou; Xiao-Jie Hao; Zhan Su; Guang-Can Guo; Guo-Ping Guo; Hong-Wen Jiang

    2010-08-28

    We have developed an etching process to fabricate a quantum dot and a nearby single electron transistor as a charge detector in a single layer graphene. The high charge sensitivity of the detector is used to probe Coulomb diamonds as well as excited spectrum in the dot, even in the regime where the current through the quantum dot is too small to be measured by conventional transport means. The graphene based quantum dot and integrated charge sensor serve as an essential building block to form a solid-state qubit in a nuclear-spin-free quantum world.

  1. Understanding colloidal quantum dot excitation with solution photon correlation fourier spectroscopy

    E-Print Network [OSTI]

    Heathcote, S. Leigh (Stephanie Leigh)

    2015-01-01

    Colloidal quantum dots (CQDs) have useful absorption and emission properties but exist in inhomogenous batches. Solution photon correlation fourier spectroscopy (S-PCFS) combines interferometry with fluorescence correlation ...

  2. Intracellular Tracking of Single Native Molecules with Electroporation-Delivered Quantum Dots

    E-Print Network [OSTI]

    Lu, Chang

    Intracellular Tracking of Single Native Molecules with Electroporation-Delivered Quantum Dots Chen Sun, Zhenning Cao, Min Wu, and Chang Lu*,,§ School of Biomedical Engineering and Sciences, Virginia

  3. The Architecture of Colloidal Quantum Dot Solar Cells: Materials to Illan J. Kramer and Edward H. Sargent*

    E-Print Network [OSTI]

    Sargent, Edward H. "Ted"

    builds upon the improvements of each previous generation, thus representing a "family tree" of solar cellThe Architecture of Colloidal Quantum Dot Solar Cells: Materials to Devices Illan J. Kramer. Measuring and Modeling CQD Solar Cells 863 2.1. Solar Cell Characterization Considerations 864 2.2. Drift

  4. Excited-state spectroscopy of InP quantum dots

    SciTech Connect (OSTI)

    Bertram, D.; Micic, O.I.; Nozik, A.J.

    1998-02-01

    We have measured low-temperature size-selective photoluminescence excitation spectra of high-quality InP quantum dots prepared by collodial chemistry. A set of samples with mean emission energies in the range from 1.9 to 2.2 eV was investigated. All samples have a size distribution of about 10{percent}, resulting in an inhomogeneously broadened photoluminescence lineshape. Due to the finite size distribution, spectra were collected at different detection wavelengths to reveal the energies of the excited excitonic states. The size dependence of the quantization energies of InP nanoparticles was determined by measuring photoluminescence excitation at different detection energies within one sample. Up to eight excited-state transitions in a set of seven samples were observed, as the estimated quantum dot size was scanned from 1.8 to 4.0 nm. A comparison of the observed peaks with a six-band {bold k}{center_dot}{bold p} calculation is given. In contrast to the successful interpretation in the case of CdSe, no agreement between the calculated and the observed excited-state energies is achieved. {copyright} {ital 1998} {ital The American Physical Society}

  5. Applicability of the {bold k}{center_dot}{bold p} method to the electronic structure of quantum dots

    SciTech Connect (OSTI)

    Fu, H.; Wang, L.; Zunger, A.

    1998-04-01

    The {bold k}{center_dot}{bold p} method has become the {open_quotes}standard model{close_quotes} for describing the electronic structure of nanometer-size quantum dots. In this paper we perform parallel {bold k}{center_dot}{bold p} (6{times}6 and 8{times}8) and direct-diagonalization pseudopotential studies on spherical quantum dots of an ionic material{emdash}CdSe, and a covalent material{emdash}InP. By using an equivalent input in both approaches, i.e., starting from a given atomic pseudopotential and deriving from it the Luttinger parameters in {bold k}{center_dot}{bold p} calculation, we investigate the effect of the different underlying wave-function representations used in {bold k}{center_dot}{bold p} and in the more exact pseudopotential direct diagonalization. We find that (i) the 6{times}6{bold k}{center_dot}{bold p} envelope function has a distinct (odd or even) parity, while atomistic wave function is parity-mixed. The 6{times}6{bold k}{center_dot}{bold p} approach produces an incorrect order of the highest valence states for both InP and CdSe dots: the p-like level is above the s-like level. (ii) It fails to reveal that the second conduction state in small InP dots is folded from the L point in the Brillouin zone. Instead, all states in {bold k}{center_dot}{bold p} are described as {Gamma}-like. (iii) The {bold k}{center_dot}{bold p} overestimates the confinement energies of both valence states and conduction states. A wave-function projection analysis shows that the principal reasons for these {bold k}{center_dot}{bold p} errors in dots are (a) use of restricted basis set, and (b) incorrect {ital bulk} dispersion relation. Error (a) can be reduced only by increasing the number of basis functions. Error (b) can be reduced by altering the {bold k}{center_dot}{bold p} implementation so as to bend upwards the second lowest bulk band, and to couple the conduction band into the s-like dot valence state. Our direct diagonalization approach provides an accurate and practical replacement to the standard model in that it is rather general, and can be performed simply on a standard workstation. {copyright} {ital 1998} {ital The American Physical Society}

  6. Excited-State Relaxation in PbSe Quantum Dots

    SciTech Connect (OSTI)

    An, J. M.; Califano, M.; Franceschetti, A.; Zunger, A.

    2008-01-01

    In solids the phonon-assisted, nonradiative decay from high-energy electronic excited states to low-energy electronic excited states is picosecond fast. It was hoped that electron and hole relaxation could be slowed down in quantum dots, due to the unavailability of phonons energy matched to the large energy-level spacings ('phonon-bottleneck'). However, excited-state relaxation was observed to be rather fast ({le}1 ps) in InP, CdSe, and ZnO dots, and explained by an efficient Auger mechanism, whereby the excess energy of electrons is nonradiatively transferred to holes, which can then rapidly decay by phonon emission, by virtue of the densely spaced valence-band levels. The recent emergence of PbSe as a novel quantum-dot material has rekindled the hope for a slow down of excited-state relaxation because hole relaxation was deemed to be ineffective on account of the widely spaced hole levels. The assumption of sparse hole energy levels in PbSe was based on an effective-mass argument based on the light effective mass of the hole. Surprisingly, fast intraband relaxation times of 1-7 ps were observed in PbSe quantum dots and have been considered contradictory with the Auger cooling mechanism because of the assumed sparsity of the hole energy levels. Our pseudopotential calculations, however, do not support the scenario of sparse hole levels in PbSe: Because of the existence of three valence-band maxima in the bulk PbSe band structure, hole energy levels are densely spaced, in contradiction with simple effective-mass models. The remaining question is whether the Auger decay channel is sufficiently fast to account for the fast intraband relaxation. Using the atomistic pseudopotential wave functions of Pb{sub 2046}Se{sub 2117} and Pb{sub 260}Se{sub 249} quantum dots, we explicitly calculated the electron-hole Coulomb integrals and the P {yields} S electron Auger relaxation rate. We find that the Auger mechanism can explain the experimentally observed P {yields} S intraband decay time scale without the need to invoke any exotic relaxation mechanisms.

  7. Towards a feasible implementation of quantum neural networks using quantum dots

    E-Print Network [OSTI]

    M. V. Altaisky; N. N. Zolnikova; N. E. Kaputkina; V. A. Krylov; Yu. E. Lozovik; N. S. Dattani

    2015-03-17

    We propose an implementation of quantum neural networks using an array of single-electron quantum dots with dipole-dipole interactions. We demonstrate that this implementation is both feasible and versatile by studying it within the framework of GaAs based quantum dot qubits coupled to a reservoir of acoustic phonons; a system whose decoherence properties have been experimentally and theoretically characterized with meticulous detail, and is considered one of the most accurately understood open quantum systems. Using numerically exact Feynman integral calculations, we have found that the quantum coherence in our neural networks survive for several ns even at liquid nitrogen temperatures (77 K), which is three orders of magnitude higher than current implementations which are based on SQUIDs operating at temperatures in the mK range. Furthermore, the previous quantum dot based proposals required control via manipulating the phonon bath, which is extremely difficult in real experiments. An advantage of our implementation is that it can be easily controlled, since dipole-dipole interaction strengths can be changed via the spacing between the dots and applying external fields.

  8. Probing the size and environment induced phase transformation in CdSe quantum dots

    SciTech Connect (OSTI)

    Karakoti, Ajay S.; Sanghavi, Shail P.; Nachimuthu, Ponnusamy; Yang, Ping; Thevuthasan, Suntharampillai

    2011-11-17

    The structural and electronic properties of CdSe quantum dots in toluene and drop-casted on Si wafer were investigated by in-situ micro X-ray diffraction, X-ray photoelectron spectroscopy and UV-Vis absorption and emission spectroscopy. The in-situ micro diffraction data show that the CdSe quantum dots capped with TOPO or hexadecylamine (HDA) in toluene exhibit predominantly wurtzite crystal structure, which undergoes a phase transformation to zinc blende crystal structure following drop casting on Si and this phase transition increases with decreasing the size of the CdSe quantum dots. Decreasing the size of quantum dots also increases the Se vacancies that facilitate the phase transformation. The X-ray photoelectron spectra show a systematic increase in the core level binding energies of Cd 3d and Se 3d, the band gap and the Cd/Se ratio as the size of the quantum dots decreases from 6.6nm to 2.1nm. This is attributed to the quantum confinement of CdSe crystallites by the capping ligands in toluene which increases with decreasing the size of the quantum dots. However, drop-casting quantum dots on Si alter the density and arrangement of capping ligands and solvent molecules on the quantum dots which causes significant phase transformation.

  9. Grazing-incidence small-angle X-ray scattering: application to the study of quantum dot lattices

    SciTech Connect (OSTI)

    Buljan, Maja Radi?, Nikola; Bernstorff, Sigrid; Draži?, Goran; Bogdanovi?-Radovi?, Iva; Holý, Václav

    2012-01-01

    The modelling of grazing-incidence small-angle X-ray scattering (GISAXS) from three-dimensional quantum dot lattices is described. The ordering of quantum dots in three-dimensional quantum dot lattices is investigated by grazing-incidence small-angle X-ray scattering (GISAXS). Theoretical models describing GISAXS intensity distributions for three general classes of lattices of quantum dots are proposed. The classes differ in the type of disorder of the positions of the quantum dots. The models enable full structure determination, including lattice type, lattice parameters, the type and degree of disorder in the quantum dot positions and the distributions of the quantum dot sizes. Applications of the developed models are demonstrated using experimentally measured data from several types of quantum dot lattices formed by a self-assembly process.

  10. Quantum Dot Solar Cells with Multiple Exciton Generation

    SciTech Connect (OSTI)

    Hanna, M. C.; Beard, M. C.; Johnson, J. C.; Murphy, J.; Ellingson, R. J.; Nozik, A. J.

    2005-11-01

    We have measured the quantum yield of the multiple exciton generation (MEG) process in quantum dots (QDs) of the lead-salt semiconductor family (PbSe, PbTe, and PbS) using fs pump-probe transient absorption measurements. Very high quantum yields (up to 300%) for charge carrier generation from MEG have been measured in all of the Pb-VI QDs. We have calculated the potential maximum performance of various MEG QD solar cells in the detailed balance limit. We examined a two-cell tandem PV device with singlet fission (SF), QD, and normal dye (N) absorbers in the nine possible series-connected combinations to compare the tandem combinations and identify the combinations with the highest theoretical efficiency. We also calculated the maximum efficiency of an idealized single-gap MEG QD solar cell with M multiplications and its performance under solar concentration.

  11. What the Blank Makes Quantum Dots Blink?

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservationBio-Inspired SolarAbout /Two0Photos andSeminars andWeylWhat the Blank Makes Quantum

  12. Detecting quantum-coherent nanomechanical oscillations using the current-noise spectrum of a double quantum dot

    E-Print Network [OSTI]

    Neill Lambert; Franco Nori

    2008-12-17

    We consider a nanomechanical resonator coupled to a double quantum dot. We demonstrate how the finite-frequency current noise spectrum through the double quantum dot can be used to distinguish classical and quantum behaviour in the nearby nano-electromechanical resonator. We also show how the full frequency current noise spectrum gives important information on the combined double quantum dot-resonator energy spectrum. Finally, we point out regimes where the quantum state of the resonator becomes squeezed, and also examine the cross-correlated electron-phonon current noise.

  13. GeSi intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia)

    E-Print Network [OSTI]

    Ge­Si intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia) Laboratori December 1999 Exploiting Ge K-edge x-ray absorption spectroscopy we provide direct evidence of Si­Ge intermixing in self-organized strained and unstrained Ge quantum dots on Si, and provide a quantitative

  14. Shot-Noise Detection in a Carbon Nanotube Quantum Dot E. Onac,1,* F. Balestro,1,

    E-Print Network [OSTI]

    Shot-Noise Detection in a Carbon Nanotube Quantum Dot E. Onac,1,* F. Balestro,1, B. Trauzettel,1-chip detection scheme for high frequency signals is used to detect noise generated by a quantum dot formed in a single wall carbon nanotube. The noise detection is based on photon assisted tunneling

  15. Fate of Spin Doublets in Quantum Dot with Many Interacting Electrons. M. Brodsky1

    E-Print Network [OSTI]

    Finkelstein, Gleb

    Fate of Spin Doublets in Quantum Dot with Many Interacting Electrons. M. Brodsky1 , G. Finkelstein1 Abstract: Using the Single Electron Capacitance Spectroscopy, we study the energies required to add electrons to a quantum dot in a broad range of electron occupancy N. Following evolution of these energies

  16. An environmental impact assessment of quantum dot photovoltaics (QDPV) from raw material acquisition through use

    E-Print Network [OSTI]

    Illinois at Chicago, University of

    of cumulative energy supply (Michaels, 2008). The demand for solar energy has enabled the funding of research: Life cycle assessment Quantum dots Nanophotovoltaics Quantum dot photovoltaic modules Solar energy to overcome two current barriers of solar technology: low efficiencies and high manufacturing costs. If higher

  17. Uptake, Translocation, and Transformation of Quantum Dots with Cationic versus Anionic Coatings by Populus deltoides nigra

    E-Print Network [OSTI]

    Alvarez, Pedro J.

    Uptake, Translocation, and Transformation of Quantum Dots with Cationic versus Anionic Coatings Supporting Information ABSTRACT: Manipulation of the organic coatings of nano- particles such as quantum dotsSe/CdZnS QDs coated with cationic polyethylenimine (PEI) (35.3 ± 6.6 nm) or poly(ethylene glycol) of anionic

  18. A highly efficient (>6%) Cd1xMnxSe quantum dot sensitized solar cell

    E-Print Network [OSTI]

    Cao, Guozhong

    , suffer from high cost of manufacturing and installation. Now the focus is on next generation solar cellsA highly efficient (>6%) Cd1ÀxMnxSe quantum dot sensitized solar cell Jianjun Tian,*a Lili Lv,a Chengbin Fei,b Yajie Wang,b Xiaoguang Liua and Guozhong Cao*bc Quantum dot sensitized solar cells (QDSCs

  19. Light extraction analysis and enhancement in a quantum dot light emitting diode

    E-Print Network [OSTI]

    Wu, Shin-Tson

    Light extraction analysis and enhancement in a quantum dot light emitting diode Ruidong Zhu outcoupling and angular performance of quantum dot light emitting diode (QLED). To illustrate the design principles, we use a red QLED as an example and compare its performance with an organic light emitting diode

  20. Coulomb Oscillations and Hall Effect in Quasi-2D Graphite Quantum Dots

    E-Print Network [OSTI]

    McEuen, Paul L.

    Coulomb Oscillations and Hall Effect in Quasi-2D Graphite Quantum Dots J. Scott Bunch, Yuval Yaish-temperature electrical transport measurements on gated, quasi-2D graphite quantum dots. In devices with low contact of graphene, a zero band gap semiconductor with two linearly dispersing bands that touch at the corners

  1. Perovskite Quantum Dots Modeled Using ab Initio and Replica Exchange Molecular Dynamics

    E-Print Network [OSTI]

    Sargent, Edward H. "Ted"

    Perovskite Quantum Dots Modeled Using ab Initio and Replica Exchange Molecular Dynamics Andrei Buin halide perovskites have recently attracted tremen- dous attention at both the experimental. Here we investigate perovskite quantum dots from theory, predicting an upper bound of the Bohr radius

  2. Nuclear spin relaxation probed by a single quantum dot A. K. Huttel,1

    E-Print Network [OSTI]

    Ludwig-Maximilians-Universität, München

    Nuclear spin relaxation probed by a single quantum dot A. K. Hu¨ttel,1 J. Weber,1 A. W. Holleitner February 2004 We present measurements on nuclear spin relaxation probed by a single quantum dot formed the electronic to the nuclear spin system. Applying electron spin resonance, the transfer mechanism is suppressed

  3. Depleted-heterojunction colloidal quantum dot photovoltaics employing low-cost electrical contacts

    E-Print Network [OSTI]

    Sargent, Edward H. "Ted"

    solution-processed single-junction cells and also multijunction architectures.1 Size-effect tuning also of depleted-heterojunction colloidal quantum dot solar cells, we describe herein a strategy that replaces energy conver- sion. Recently, colloidal quantum dot CQD solar cells were reported that reached above 5

  4. GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response

    E-Print Network [OSTI]

    Jalali. Bahram

    into existing multijunction cells either as a means to increase the current or efficiency by using low band gapGaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

  5. Quantum computation with moving quantum dots generated by surface acoustic waves

    E-Print Network [OSTI]

    X. Shi; M. Zhang; L. F. Wei

    2011-02-15

    Motivated by the recent experimental observations [M. Kataoka et al., Phys. Rev. Lett. {\\bf102}, 156801 (2009)], we propose here an theoretical approach to implement quantum computation with bound states of electrons in moving quantum dots generated by the driving of surface acoustic waves. Differing from static quantum dots defined by a series of static electrodes above the two-dimensional electron gas (2DEG), here a single electron is captured from a 2DEG-reservoir by a surface acoustic wave (SAW) and then trapped in a moving quantum dot (MQD) transporting across a quasi-one dimensional channel (Q1DC), wherein all the electrons have been excluded out by the actions of the surface gates. The flying qubit introduced here is encoded by the two lowest adiabatic levels of the electron in the MQD, and the Rabi oscillation between these two levels could be implemented by applying finely-selected microwave pulses to the surface gates. By using the Coulomb interaction between the electrons in different moving quantum dots, we show that a desirable two-qubit operation, i.e., i-SWAP gate, could be realized. Readouts of the present flying qubits are also feasible with the current single-electron detected technique.

  6. Physica E 35 (2006) 278284 Spectroscopy of molecular states in a few-electron double quantum dot

    E-Print Network [OSTI]

    Ludwig-Maximilians-Universität, München

    2006-01-01

    . In particular, the tunnel splitting of the double well potential for up to one trapped electron is unambiguously the trapping potential of a single quantum dot, a strongly tunnel-coupled double quantum dot can be defined reserved. PACS: 73.21.La; 73.23.Hk; 73.20.Jc Keywords: Double quantum dot; Single electron tunneling

  7. Counting statistics of coherent population trapping in quantum dots C. W. Groth, B. Michaelis, and C. W. J. Beenakker

    E-Print Network [OSTI]

    tunneling between three quantum dots can trap an electron in a coherent superposition of charge on two, is based on destructive interference of single-electron tunnel- ing between three quantum dots see Fig. 1 . The trapped state is a coherent superposition of the electronic charge in two of these quantum dots, so

  8. Dynamic Nuclear Spin Polarization in the Resonant Laser Excitation of an InGaAs Quantum Dot

    E-Print Network [OSTI]

    Ludwig-Maximilians-Universität, München

    Dynamic Nuclear Spin Polarization in the Resonant Laser Excitation of an InGaAs Quantum Dot A. Ho transitions in self-assembled quantum dots leads to nuclear spin polarization that is qualitatively different, we demonstrate that nuclear spin polarization manifests itself in quantum dots subjected to finite

  9. Water-soluble luminescent quantum dots and biomolecular conjugates thereof and related compositions and methods of use

    DOE Patents [OSTI]

    Nie, Shuming; Chan, Warren C. W.; Emory, Stephen

    2007-03-20

    The present invention provides a water-soluble luminescent quantum dot, a biomolecular conjugate thereof and a composition comprising such a quantum dot or conjugate. Additionally, the present invention provides a method of obtaining a luminescent quantum dot, a method of making a biomolecular conjugate thereof, and methods of using a biomolecular conjugate for ultrasensitive nonisotopic detection in vitro and in vivo.

  10. Quasiresonant excitation of InP/InGaP quantum dots using second harmonic generated in a photonic crystal cavity

    E-Print Network [OSTI]

    Vuckovic, Jelena

    Quasiresonant excitation of InP/InGaP quantum dots using second harmonic generated in a photonic://apl.aip.org/about/rights_and_permissions #12;Quasiresonant excitation of InP/InGaP quantum dots using second harmonic generated in a photonic applications. Resonant or quasiresonant excitation of single quantum dots provides greater single photon

  11. Water-soluble luminescent quantum dots and biomolecular conjugates thereof and related compositions and method of use

    DOE Patents [OSTI]

    Nie, Shuming (Bloomington, IN); Chan, Warren C. W. (Bloomington, IN); Emory, Steven R. (Los Alamos, NM)

    2002-01-01

    The present invention provides a water-soluble luminescent quantum dot, a biomolecular conjugate thereof and a composition comprising such a quantum dot or conjugate. Additionally, the present invention provides a method of obtaining a luminescent quantum dot, a method of making a biomolecular conjugate thereof, and methods of using a biomolecular conjugate for ultrasensitive nonisotopic detection in vitro and in vivo.

  12. Nonequilibrium stabilization of charge states in double quantum dots

    E-Print Network [OSTI]

    Udo Hartmann; Frank K. Wilhelm

    2004-04-29

    We analyze the decoherence of charge states in double quantum dots due to cotunneling. The system is treated using the Bloch-Redfield generalized master equation for the Schrieffer-Wolff transformed Hamiltonian. We show that the decoherence, characterized through a relaxation $\\tau_{r}$ and a dephasing time $\\tau_{\\phi}$, can be controlled through the external voltage and that the optimum point, where these times are maximum, is not necessarily in equilibrium. We outline the mechanism of this nonequilibrium-induced enhancement of lifetime and coherence. We discuss the relevance of our results for recent charge qubit experiments.

  13. Activation of molecular catalysts using semiconductor quantum dots

    DOE Patents [OSTI]

    Meyer, Thomas J. (Chapel Hill, NC); Sykora, Milan (Los Alamos, NM); Klimov, Victor I. (Los Alamos, NM)

    2011-10-04

    Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.

  14. Thermal transport through non-ideal Andreev quantum dots

    E-Print Network [OSTI]

    Pedro Vidal

    2015-01-07

    We consider the scenario of thermal transport through two types of Andreev quantum dots which are coupled to two leads, belonging to the Class D and Class C symmetry classes. Using the random matrix description we derive the joint probability density function (j.p.d.f.) in term of Hypergeometric Function of Matrix Arguments when we consider one lead to be attached ideally and one lead non ideally. For the class C ensemble we derive a more explicit representation of the j.p.d.f. which results in a new type of random matrix model.

  15. Computational modeling of electrophotonics nanomaterials: Tunneling in double quantum dots

    SciTech Connect (OSTI)

    Vlahovic, Branislav Filikhin, Igor

    2014-10-06

    Single electron localization and tunneling in double quantum dots (DQD) and rings (DQR) and in particular the localized-delocalized states and their spectral distributions are considered in dependence on the geometry of the DQDs (DQRs). The effect of violation of symmetry of DQDs geometry on the tunneling is studied in details. The cases of regular and chaotic geometries are considered. It will be shown that a small violation of symmetry drastically affects localization of electron and that anti-crossing of the levels is the mechanism of tunneling between the localized and delocalized states in DQRs.

  16. Photoluminescence-enhanced biocompatible quantum dots by phospholipid functionalization

    SciTech Connect (OSTI)

    Shi Yunfeng; He Peng Zhu Xinyuan

    2008-10-02

    A simple two-step strategy using phospholipid (PPL) to functionalize core/shell CdSe/ZnS quantum dots (QDs) has been described. The experimental data show that the use of S-H terminated PPL results not only in the high colloidal stability of core/shell CdSe/ZnS QDs in the aqueous phase, but also in the significant enhancement of photoluminescence. The degree of the enhancement is a function of the PPL-CdSe/ZnS QDs sample concentration. These results might be promising for future biological platform in new devices ranging from photovoltaic cells to biosensors and other devices.

  17. Solid-state photonic interfaces using semiconductor quantum dots

    E-Print Network [OSTI]

    Boyer de la Giroday, Antoine

    2012-02-07

    . Rev. Lett. 106, 216802 (2011) 5. Coherent entangled light generated by quantum dots in the presence of nuclear magnetic fields R.M. Stevenson, C.L. Salter, A. Boyer de la Giroday, I. Farrer, C.A. Nicoll, D.A. Ritchie, and A.J. Shields arXiv:1103.2969v1... Bragg reflectors (DBRs) surround- ing the cavity region made of a GaAs spacer layer containing the QDs. Each DBR consists of alternating layers of high- and low-refractive index materi- als (respectively GaAs with n = 3.54 and AlAs n = 2.97 in our case...

  18. Charge-transfer dynamics in multilayered PbS and PbSe quantum dot architectures

    SciTech Connect (OSTI)

    Xu, F.; Ma, X.; Haughn, C. R.; Doty, M. F.; Cloutier, S. G.

    2014-02-03

    We demonstrate control of the charge transfer process in PbS and PbSe quantum dot assemblies. We first demonstrate efficient charge transfer from donor quantum dots to acceptor quantum dots in a multi-layer PbSe cascade structure. Then, we assemble type-I and type-II heterostructures using both PbS and PbSe quantum dots via careful control of the band alignment. In type-I structures, photo-generated carriers are transferred and localized in the smaller bandgap (acceptor) quantum dots, resulting in a significant luminescence enhancement. In contrast, a significant luminescence quenching and shorter emission lifetime confirms an efficient separation of photo-generated carriers in the type-II architecture.

  19. Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

    DOE Patents [OSTI]

    Forrest, Stephen R. (Ann Arbor, MI); Wei, Guodan (Ann Arbor, MI)

    2010-07-06

    A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

  20. Enhanced sequential carrier capture into individual quantum dots and quantum posts controlled by surface acoustic waves

    E-Print Network [OSTI]

    Stefan Völk; Florian J. R. Schülein; Florian Knall; Dirk Reuter; Andreas D. Wieck; Tuan A. Truong; Hyochul Kim; Pierre M. Petroff; Achim Wixforth; Hubert J. Krenner

    2010-11-19

    Individual self-assembled Quantum Dots and Quantum Posts are studied under the influence of a surface acoustic wave. In optical experiments we observe an acoustically induced switching of the occupancy of the nanostructures along with an overall increase of the emission intensity. For Quantum Posts, switching occurs continuously from predominantely charged excitons (dissimilar number of electrons and holes) to neutral excitons (same number of electrons and holes) and is independent on whether the surface acoustic wave amplitude is increased or decreased. For quantum dots, switching is non-monotonic and shows a pronounced hysteresis on the amplitude sweep direction. Moreover, emission of positively charged and neutral excitons is observed at high surface acoustic wave amplitudes. These findings are explained by carrier trapping and localization in the thin and disordered two-dimensional wetting layer on top of which Quantum Dots nucleate. This limitation can be overcome for Quantum Posts where acoustically induced charge transport is highly efficient in a wide lateral Matrix-Quantum Well.

  1. Photo-Activated Luminescence of CdSe Quantum Dot Monolayers S. R. Cordero, P. J. Carson, R. A. Estabrook, G. F. Strouse, and S. K. Buratto*

    E-Print Network [OSTI]

    Photo-Activated Luminescence of CdSe Quantum Dot Monolayers S. R. Cordero, P. J. Carson, R. A passivation is even more critical in quantum dot solids where inter-dot coupling reduces the QY of the film

  2. Cooling a nanomechanical resonator by a triple quantum dot

    E-Print Network [OSTI]

    Li, Zeng-Zhao; Lam, Chi-Hang; You, J Q

    2012-01-01

    We propose an approach for achieving ground-state cooling of a nanomechanical resonator (NAMR) capacitively coupled to a triple quantum dot (TQD). This TQD is an electronic analog of a three-level atom in $\\Lambda$ configuration which allows an electron to enter it via lower-energy states and to exit only from a higher-energy state. By tuning the degeneracy of the two lower-energy states in the TQD, an electron can be trapped in a dark state caused by destructive quantum interference between the two tunneling pathways to the higher-energy state. Therefore, ground-state cooling of an NAMR can be achieved when electrons absorb readily and repeatedly energy quanta from the NAMR for excitations.

  3. Cooling a nanomechanical resonator by a triple quantum dot

    E-Print Network [OSTI]

    Zeng-Zhao Li; Shi-Hua Ouyang; Chi-Hang Lam; J. Q. You

    2012-05-26

    We propose an approach for achieving ground-state cooling of a nanomechanical resonator (NAMR) capacitively coupled to a triple quantum dot (TQD). This TQD is an electronic analog of a three-level atom in $\\Lambda$ configuration which allows an electron to enter it via lower-energy states and to exit only from a higher-energy state. By tuning the degeneracy of the two lower-energy states in the TQD, an electron can be trapped in a dark state caused by destructive quantum interference between the two tunneling pathways to the higher-energy state. Therefore, ground-state cooling of an NAMR can be achieved when electrons absorb readily and repeatedly energy quanta from the NAMR for excitations.

  4. Quantum Interference Induced Photon Blockade in a Coupled Single Quantum Dot-Cavity System

    E-Print Network [OSTI]

    Tang, Jing; Xu, Xiulai

    2015-01-01

    We propose an experimental scheme to implement a strong photon blockade with a single quantum dot coupled to a nanocavity. The photon blockade effect can be tremendously enhanced by driving the cavity and the quantum dot simultaneously with two classical laser fields. This enhancement of photon blockade is ascribed to the quantum interference effect to avoid two-photon excitation of the cavity field. Comparing with Jaynes-Cummings model, the second-order correlation function at zero time delay $g^{(2)}(0)$ in our scheme can be reduced by two orders of magnitude and the system sustains a large intracavity photon number. A red (blue) cavity-light detuning asymmetry for photon quantum statistics with bunching or antibunching characteristics is also observed. The photon blockade effect has a controllable flexibility by tuning the relative phase between the two pumping laser fields and the Rabi coupling strength between the quantum dot and the pumping field. Moreover, the photon blockade scheme based on quantum in...

  5. Colloidal quantum dot solar cells on curved and flexible substrates

    SciTech Connect (OSTI)

    Kramer, Illan J.; Moreno-Bautista, Gabriel; Minor, James C.; Kopilovic, Damir; Sargent, Edward H.

    2014-10-20

    Colloidal quantum dots (CQDs) are semiconductor nanocrystals synthesized with, processed in, and deposited from the solution phase, potentially enabling low-cost, facile manufacture of solar cells. Unfortunately, CQD solar cell reports, until now, have only explored batch-processing methods—such as spin-coating—that offer limited capacity for scaling. Spray-coating could offer a means of producing uniform colloidal quantum dot films that yield high-quality devices. Here, we explore the versatility of the spray-coating method by producing CQD solar cells in a variety of previously unexplored substrate arrangements. The potential transferability of the spray-coating method to a roll-to-roll manufacturing process was tested by spray-coating the CQD active layer onto six substrates mounted on a rapidly rotating drum, yielding devices with an average power conversion efficiency of 6.7%. We further tested the manufacturability of the process by endeavoring to spray onto flexible substrates, only to find that spraying while the substrate was flexed was crucial to achieving champion performance of 7.2% without compromise to open-circuit voltage. Having deposited onto a substrate with one axis of curvature, we then built our CQD solar cells onto a spherical lens substrate having two axes of curvature resulting in a 5% efficient device. These results show that CQDs deposited using our spraying method can be integrated to large-area manufacturing processes and can be used to make solar cells on unconventional shapes.

  6. Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory

    E-Print Network [OSTI]

    Tang, Jian-Shun; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

    2015-01-01

    Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by Duan-Lukin-Cirac-Zoller protocol, many improved quantum-repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multi-photons (multi-photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with $1$, $20$ and $100$ narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scal...

  7. Effect of swift heavy ion irradiation on bare and coated ZnS quantum dots

    SciTech Connect (OSTI)

    Chowdhury, S. Hussain, A.M.P.; Ahmed, G.A.; Singh, F.; Avasthi, D.K.; Choudhury, A.

    2008-12-01

    The present study compares structural and optical modifications of bare and silica (SiO{sub 2}) coated ZnS quantum dots under swift heavy ion (SHI) irradiation. Bare and silica coated ZnS quantum dots were prepared following an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. X-ray diffraction (XRD) and transmission electron microscopy (TEM) study of the samples show the formation of almost spherical ZnS quantum dots. The UV-Vis absorption spectra reveal blue shift relative to bulk material in absorption energy while photoluminescence (PL) spectra suggests that surface state and near band edge emissions are dominating in case of bare and coated samples, respectively. Swift heavy ion irradiation of the samples was carried out with 160 MeV Ni{sup 12+} ion beam with fluences 10{sup 12} to 10{sup 13} ions/cm{sup 2}. Size enhancement of bare quantum dots after irradiation has been indicated in XRD and TEM analysis of the samples which has also been supported by optical absorption spectra. However similar investigations on irradiated coated quantum dots revealed little change in quantum dot size and emission. The present study thus shows that the coated ZnS quantum dots are stable upon SHI irradiation compared to the bare one.

  8. Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

    SciTech Connect (OSTI)

    Pinto, S. R. C.; Ramos, M. M. D.; Gomes, M. J. M.; Buljan, M.; Chahboun, A.; Roldan, M. A.; Molina, S. I.; Bernstorff, S.; Varela, M.; Pennycook, S. J.; Barradas, N. P.; Alves, E.

    2012-04-01

    In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

  9. Observations of Rabi oscillations in a non-polar InGaN quantum dot

    E-Print Network [OSTI]

    Reid, Benjamin P. L.; Kocher, Claudius; Zhu, Tongtong; Oehler, Fabrice; Emery, Robert; Chan, Christopher C. S.; Oliver, Rachel A.; Taylor, Robert A.

    2014-07-03

    . A pattern of such apertures was sufficient to enable optical isolation of single quantum dots. The samples were mounted in a continuous helium flow cryostat (Janis ST-500) with a feedback loop temperature controller (Lakeshore 331) enabling cooling... to sustain excitonic emission at high temperatures, evidenced by single photon emission at 200K from InGaN [8] and at 300K from GaN quantum dots [9]. Demonstration of coherent control of quantum dot qubit states in the III-nitride system has been hampered...

  10. Far off-resonant coupling between photonic crystal microcavity and single quantum dot with resonant excitation

    SciTech Connect (OSTI)

    Banihashemi, Mehdi; Ahmadi, Vahid, E-mail: v-ahmadi@modares.ac.ir [Department of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, P.O. Box 14115-194 (Iran, Islamic Republic of)] [Department of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, P.O. Box 14115-194 (Iran, Islamic Republic of); Nakamura, Tatsuya; Kojima, Takanori; Kojima, Kazunobu; Noda, Susumu [Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510 (Japan)] [Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510 (Japan)

    2013-12-16

    In this paper, we experimentally demonstrate that with sub-nanowatt coherent s-shell excitation of a single InAs quantum dot, off-resonant coupling of 4.1?nm is possible between L3 photonic crystal microcavity and the quantum dot at 50?K. This resonant excitation reduces strongly the effect of surrounding charges to quantum dot, multiexciton complexes and pure dephasing. It seems that this far off-resonant coupling is the result of increased number of acoustical phonons due to high operating temperature of 50?K. The 4.1?nm detuning is the largest amount for this kind of coupling.

  11. Red light-emitting diodes based on InP/GaP quantum dots

    SciTech Connect (OSTI)

    Hatami, F.; Lordi, V.; Harris, J.S.; Kostial, H.; Masselink, W.T.

    2005-05-01

    The growth, fabrication, and device characterization of InP quantum-dot light-emitting diodes based on GaP are described and discussed. The diode structures are grown on gallium phosphide substrates using gas-source molecular-beam epitaxy and the active region of the diode consists of self-assembled InP quantum dots embedded in a GaP matrix. Red electroluminescence originating from direct band-gap emission from the InP quantum dots is observed at low temperatures.With increasing temperature, however, the emission line shifts to the longer wavelength. The emission light is measured to above room temperature.

  12. Whispering gallery modes in quantum dot-embedded dielectric microspheres for tagless remote refractometric sensing 

    E-Print Network [OSTI]

    Pang, Shuo

    2008-10-10

    coating. The CdSe/Zns core/shell quantum dots are prepared colloidally via organometallic synthesis. In these experiments, green quantum dots with an emission peak at 530nm are used. The absorption and emission spectra are shown in Figure 9. 23... stream_source_info Shuo.pdf.txt stream_content_type text/plain stream_size 66833 Content-Encoding UTF-8 stream_name Shuo.pdf.txt Content-Type text/plain; charset=UTF-8 WHISPERING GALLERY MODES IN QUANTUM DOT...

  13. The use of bulk states to accelerate the band edge statecalculation of a semiconductor quantum dot

    SciTech Connect (OSTI)

    Vomel, Christof; Tomov, Stanimire Z.; Wang, Lin-Wang; Marques,Osni A.; Dongarra, Jack J.

    2006-05-10

    We present a new technique to accelerate the convergence of the folded spectrum method in empirical pseudopotential band edge state calculations for colloidal quantum dots. We use bulk band states of the materials constituent of the quantum dot to construct initial vectors and a preconditioner. We apply these to accelerate the convergence of the folded spectrum method for the interior states at the top of the valence and the bottom of the conduction band. For large CdSe quantum dots, the number of iteration steps until convergence decreases by about a factor of 4 compared to previous calculations.

  14. Heralded entanglement of two distant quantum dot spins via optical interference

    E-Print Network [OSTI]

    Li-Bo Chen; Wen Yang; Zhang-Qi Yin

    2015-05-19

    We present a proposal for heralded entanglement between two quantum dots via Hong--Ou--Mandel effect. Each of the quantum dots, drived off-resonance by two lasers, can be entangled with the coherent cavity mode. The output photons from the two coherent cavity modes interfering by a beamsplitter, we could entangle the two QDs with nearly unit success probability. Our scheme requires neither direct coupling between qubits nor the detection of single photons. Moreover the quantum dots do not need to have the same frequencies and coupling constants.

  15. Engineering of quantum dot photon sources via electro-elastic fields

    E-Print Network [OSTI]

    Rinaldo Trotta; Armando Rastelli

    2015-03-01

    The possibility to generate and manipulate non-classical light using the tools of mature semiconductor technology carries great promise for the implementation of quantum communication science. This is indeed one of the main driving forces behind ongoing research on the study of semiconductor quantum dots. Often referred to as artificial atoms, quantum dots can generate single and entangled photons on demand and, unlike their natural counterpart, can be easily integrated into well-established optoelectronic devices. However, the inherent random nature of the quantum dot growth processes results in a lack of control of their emission properties. This represents a major roadblock towards the exploitation of these quantum emitters in the foreseen applications. This chapter describes a novel class of quantum dot devices that uses the combined action of strain and electric fields to reshape the emission properties of single quantum dots. The resulting electro-elastic fields allow for control of emission and binding energies, charge states, and energy level splittings and are suitable to correct for the quantum dot structural asymmetries that usually prevent these semiconductor nanostructures from emitting polarization-entangled photons. Key experiments in this field are presented and future directions are discussed.

  16. Nanoscale optical positioning of single quantum dots for bright, pure, and on-demand single-photon emission

    E-Print Network [OSTI]

    Sapienza, Luca; Badolato, Antonio; Srinivasan, Kartik

    2015-01-01

    Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth results in an essentially random in-plane spatial distribution of quantum dots, presenting a challenge in creating devices that exploit the strong interaction of single quantum dots with highly confined optical modes. Here, we present a photoluminescence imaging approach for locating single quantum dots with respect to alignment features with an average (minimum) position uncertainty < 30 nm (< 10 nm), which represents an enabling technology for the creation of optimized single quantum dot devices. To that end, we create quantum dot single-photon sources, based on a circular Bragg grating geometry, that simultaneously exhibit high collection efficiency (48 % +/- 5 % into a 0.4 numerical aperture lens, close to the theoretically predicted value of 50 %), low multiphoton prob...

  17. Gate-Tunable Graphene Quantum Dot and Dirac Oscillator

    E-Print Network [OSTI]

    Abdelhadi Belouad; Ahmed Jellal; Youness Zahidi

    2015-05-29

    We obtain the solution of the Dirac equation in (2+1) dimensions in the presence of a constant magnetic field normal to the plane together with a two-dimensional Dirac-oscillator potential coupling. We study the energy spectrum of graphene quantum dot (QD) defined by electrostatic gates. We give discussions of our results based on different physical settings, whether the cyclotron frequency is similar or larger/smaller compared to the oscillator frequency. This defines an effective magnetic field that produces the effective quantized Landau levels. We study analytically such field in gate-tunable graphene QD and show that our structure allow us to control the valley degeneracy. Finally, we compare our results with already published work and also discuss the possible applications of such QD.

  18. Gate-Tunable Graphene Quantum Dot and Dirac Oscillator

    E-Print Network [OSTI]

    Belouad, Abdelhadi; Zahidi, Youness

    2015-01-01

    We obtain the solution of the Dirac equation in (2+1) dimensions in the presence of a constant magnetic field normal to the plane together with a two-dimensional Dirac-oscillator potential coupling. We study the energy spectrum of graphene quantum dot (QD) defined by electrostatic gates. We give discussions of our results based on different physical settings, whether the cyclotron frequency is similar or larger/smaller compared to the oscillator frequency. This defines an effective magnetic field that produces the effective quantized Landau levels. We study analytically such field in gate-tunable graphene QD and show that our structure allow us to control the valley degeneracy. Finally, we compare our results with already published work and also discuss the possible applications of such QD.

  19. Interaction of graphene quantum dots with bulk semiconductor surfaces

    SciTech Connect (OSTI)

    Mohapatra, P. K.; Singh, B. P.; Kushavah, Dushyant; Mohapatra, J.

    2015-05-15

    Highly luminescent graphene quantum dots (GQDs) are synthesized through thermolysis of glucose. The average lateral size of the synthesized GQDs is found to be ?5 nm. The occurrence of D and G band at 1345 and 1580 cm{sup ?1} in Raman spectrum confirms the presence of graphene layers. GQDs are mostly consisting of 3 to 4 graphene layers as confirmed from the AFM measurements. Photoluminescence (PL) measurement shows a distinct broadening of the spectrum when GQDs are on the semiconducting bulk surface compared to GQDs in water. The time resolved PL measurement shows a significant shortening in PL lifetime due to the substrate interaction on GQDs compared to the GQDs in solution phase.

  20. Numerical study of quasiparticle lifetime in quantum dots

    E-Print Network [OSTI]

    Alejandro M. F. Rivas; Eduardo R. Mucciolo; Alex Kamenev

    2001-09-25

    The decay rate of quasiparticles in quantum dots is studied through the real time calculation of the single-particle Green function in the self-consistent approximation. The method avoids exact diagonalization, transforming the problem into a system of coupled non-linear integral equations which may be solved iteratively. That allows us to study systems larger than previously treated in the literature. Our results for the inverse participation ratio of many-body states show that the threshold energy for the quasiparticle disintegration is $E^\\ast \\sim \\sqrt{g} \\Delta$. The delocalization transition is soft rather than sharp. Three different regimes as function of the effective interaction strength may be clearly identified at high energies.

  1. Valley pair qubits in double quantum dots of gapped graphene

    E-Print Network [OSTI]

    G. Y. Wu; N. -Y. Lue; L. Chang

    2011-07-03

    The rise of graphene opens a new door to qubit implementation, as discussed in the recent proposal of valley pair qubits in double quantum dots of gapped graphene (Wu et al., arXiv: 1104.0443 [cond-mat.mes-hall]). The work here presents the comprehensive theory underlying the proposal. It discusses the interaction of electrons with external magnetic and electric fields in such structures. Specifically, it examines a strong, unique mechanism, i.e., the analogue of the 1st-order relativistic effect in gapped graphene. This mechanism is state mixing free and allows, together with the electrically tunable exchange coupling, a fast, all-electric manipulation of qubits via electric gates, in the time scale of ns. The work also looks into the issue of fault tolerance in a typical case, yielding at 10oK a long qubit coherence time (~O(ms)).

  2. Soliton nanoantennas in two-dimensional arrays of quantum dots

    E-Print Network [OSTI]

    Gligori?, G; Hadžievski, Lj; Slepyan, G Ya; Malomed, B A

    2015-01-01

    We consider two-dimensional (2D) arrays of self-organized semiconductor quantum dots (QDs) strongly interacting with electromagnetic field in the regime of Rabi oscillations. The QD array built of two-level states is modelled by two coupled systems of discrete nonlinear Schr\\"{o}dinger equations. Localized modes in the form of single-peaked fundamental and vortical stationary Rabi solitons and self-trapped breathers have been found. The results for the stability, mobility and radiative properties of the Rabi modes suggest a concept of a self-assembled 2D \\textit{% soliton-based nano-antenna}, which should be stable against imperfections In particular, we discuss the implementation of such a nano-antenna in the form of surface plasmon solitons in graphene, and illustrate possibilities to control their operation by means of optical tools.

  3. Location deterministic biosensing from quantum-dot-nanowire assemblies

    SciTech Connect (OSTI)

    Liu, Chao [Materials Science and Engineering Program, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Kim, Kwanoh [Department of Mechanical Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Fan, D. L., E-mail: dfan@austin.utexas.edu [Materials Science and Engineering Program, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, University of Texas at Austin, Austin, Texas 78712 (United States)

    2014-08-25

    Semiconductor quantum dots (QDs) with high fluorescent brightness, stability, and tunable sizes, have received considerable interest for imaging, sensing, and delivery of biomolecules. In this research, we demonstrate location deterministic biochemical detection from arrays of QD-nanowire hybrid assemblies. QDs with diameters less than 10?nm are manipulated and precisely positioned on the tips of the assembled Gold (Au) nanowires. The manipulation mechanisms are quantitatively understood as the synergetic effects of dielectrophoretic (DEP) and alternating current electroosmosis (ACEO) due to AC electric fields. The QD-nanowire hybrid sensors operate uniquely by concentrating bioanalytes to QDs on the tips of nanowires before detection, offering much enhanced efficiency and sensitivity, in addition to the position-predictable rationality. This research could result in advances in QD-based biomedical detection and inspires an innovative approach for fabricating various QD-based nanodevices.

  4. Fluorescence quenching of CdSe quantum dots on graphene

    SciTech Connect (OSTI)

    Guo, Xi Tao; Hua Ni, Zhen, E-mail: zhni@seu.edu.cn; Yan Nan, Hai; Hui Wang, Wen [Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189 (China)] [Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189 (China); Yan Liao, Chun [Physics Department, National Photoelectric Technology and Functional Materials and Application of Science and Technology International Cooperation Base, Northwest University, Xi'an 710069 (China)] [Physics Department, National Photoelectric Technology and Functional Materials and Application of Science and Technology International Cooperation Base, Northwest University, Xi'an 710069 (China); Zhang, Yan; Wei Zhao, Wei [Jiangsu Key Laboratory for Design and Fabrication of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189 (China)] [Jiangsu Key Laboratory for Design and Fabrication of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189 (China)

    2013-11-11

    We studied systematically the fluorescence quenching of CdSe quantum dots (QDs) on graphene and its multilayers, as well as graphene oxide (GO) and reduced graphene oxide (rGO). Raman intensity of QDs was used as a quantitatively measurement of its concentration in order to achieve a reliable quenching factor (QF). It was found that the QF of graphene (?13.1) and its multilayers is much larger than rGO (?4.4), while GO (?1.5) has the lowest quenching efficiency, which suggests that the graphitic structure is an important factor for quenching the fluorescence of QDs. It was also revealed that the QF of graphene is not strongly dependent on its thicknesses.

  5. Experimental demonstration of clocked single-electron switching in quantum-dot cellular automata

    E-Print Network [OSTI]

    Orlov, Alexei

    tunnel junctions where the location of an excess electron is defined by electrostatic potentials on gates, the electrons remain trapped on the dots regardless of the state of the input signal. Although semiconductorExperimental demonstration of clocked single-electron switching in quantum-dot cellular automata

  6. Control of Nanostructures and Interfaces of Metal Oxide Semiconductors for Quantum-Dots-Sensitized Solar Cells

    E-Print Network [OSTI]

    Cao, Guozhong

    for the solar cells, solar fuel, photo catalyst, and energy storage devices due to their excellent photoelectric-Dots-Sensitized Solar Cells Jianjun Tian, and Guozhong Cao*,,§ Beijing Institute of Nanoenergy and Nanosystems, Chinese for the quantum dots sensitized solar cells (QDSCs), owing to their large specific surface area for loading

  7. Pseudopotential study of electron-hole excitations in colloidal free-standing InAs quantum dots

    SciTech Connect (OSTI)

    Williamson, A. J.; Zunger, Alex

    2000-01-15

    Excitonic spectra are calculated for free-standing, surface passivated, InAs quantum dots using atomic pseudopotentials for the single-particle states and screened Coulomb interactions for the two-body terms. We present an analysis of the single particle states involved in each excitation in terms of their angular momenta and Bloch-wave parentage. We find that (i) in agreement with other pseudopotential studies of CdSe and InP quantum dots, but in contrast to k{center_dot}p calculations, the dot wave functions exhibit strong odd-even angular momentum envelope function mixing (e.g., s with p) and large valence-conduction coupling. (ii) While the pseudopotential approach produced very good agreement with experiment for free-standing, colloidal CdSe and InP dots, and for self-assembled (GaAs-embedded) InAs dots, here the predicted spectrum does not agree well with the measured (ensemble average over dot sizes) spectra. (1) Our calculated excitonic gap is larger than the photoluminescence measured one, and (2) while the spacing between the lowest excitons is reproduced, the spacings between higher excitons is not fit well. Discrepancy (1) could result from surface state emission. As for (2), agreement is improved when account is taken of the finite-size distribution in the experimental data. (iii) We find that the single-particle gap scales as R{sup -1.01} (not R{sup -2}), that the screened (unscreened) electron-hole Coulomb interaction scales as R{sup -1.79} (R{sup -0.7}), and that the excitonic gap scales as R{sup -0.9}. These scaling laws are different from those expected from simple models. (c) 2000 The American Physical Society.

  8. Quantum chaos in quantum dots coupled to bosons

    E-Print Network [OSTI]

    S. Ahadpour; N. Hematpour

    2012-07-24

    Chaos transition, as an important topic, has become an active research subject in non-linear science. By considering a Dicke Hamiltonian coupled to a bath of harmonic oscillator, we have been able to introduce a logistic map with quantum corrections. Some basic dynamical properties, such as Lyapunov exponents and bifurcation diagram of the model are studied. we show that in this model, the transition from integrable motion to periodic, chaotic and hyperchaotic as the control parameter $r$ is increased.

  9. Cryogenic spectroscopy of ultra-low density colloidal lead chalcogenide quantum dots on chip-scale optical cavities towards single quantum dot near-infrared cavity QED

    E-Print Network [OSTI]

    Ranojoy Bose; Jie Gao; James F. McMillan; Alex D. Williams; Chee Wei Wong

    2009-11-09

    We present evidence of cavity quantum electrodynamics from a sparse density of strongly quantum-confined Pb-chalcogenide nanocrystals (between 1 and 10) approaching single-dot levels on moderately high-Q mesoscopic silicon optical cavities. Operating at important near-infrared (1500-nm) wavelengths, large enhancements are observed from devices and strong modifications of the QD emission are achieved. Saturation spectroscopy of coupled QDs is observed at 77K, highlighting the modified nanocrystal dynamics for quantum information processing.

  10. Development of low-temperature solution-processed colloidal quantum dot-based solar cells

    E-Print Network [OSTI]

    Chang, Liang-Yi, Ph. D. Massachusetts Institute of Technology

    2013-01-01

    Solution-processed solar cells incorporating organic semiconductors and inorganic colloidal quantum dots (QDs) are potential alternatives to conventional solar cells fabricated via vacuum or high-temperature sintering ...

  11. QUANTUM DOTS Elliott H. Lieb \\Lambda and Jan Philip Solovej \\Lambda\\Lambda

    E-Print Network [OSTI]

    QUANTUM DOTS Elliott H. Lieb \\Lambda and Jan Philip Solovej \\Lambda\\Lambda Department shown that a Thomas­Fermi type theory for the ground state is asymptotically correct when N and B tend

  12. Efficiency loss mechanisms in colloidal quantum-dot light-emitting diodes

    E-Print Network [OSTI]

    Shirasaki, Yasuhiro

    2013-01-01

    Saturated and tunable emission colors make colloidal quantum-dot light-emitting diodes (QD-LEDs) interesting for the next generation of display and lighting technologies. However, there still remain various hurdles to the ...

  13. Quantum Dots Promise to Significantly Boost Solar Cell Efficiencies (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-08-01

    In the search for a third generation of solar-cell technologies, a leading candidate is the use of 'quantum dots' -- tiny spheres of semiconductor material measuring only about 2-10 billionths of a meter in diameter. Quantum dots have the potential to dramatically increase the efficiency of converting sunlight into energy -- perhaps even doubling it in some devices -- because of their ability to generate more than one bound electron-hole pair, or exciton, per incoming photon. NREL has produced quantum dots using colloidal suspensions; then, using molecular self-assembly, they have been fabricated into the first-ever quantum-dot solar cells. While these devices operate with only 4.4% efficiency, they demonstrate the capability for low-cost manufacturing.

  14. Luminescent, quantum dot-based anti-reflective coatings for crystalline silicon photovoltaics

    E-Print Network [OSTI]

    Bruer, Garrett (Garrett A.)

    2010-01-01

    This thesis demonstrates and evaluates the potential application of luminescent quantum dot/polymer solutions on crystalline silicon photovoltaics. After spin coating the QD/polymer onto silicon photodiodes, an increase ...

  15. IEEE TRANSACTIONS ON NANOBIOSCIENCE, VOL. 5, NO. 4, DECEMBER 2006 231 Peptide Coated Quantum Dots for

    E-Print Network [OSTI]

    Michalet, Xavier

    IEEE TRANSACTIONS ON NANOBIOSCIENCE, VOL. 5, NO. 4, DECEMBER 2006 231 Peptide Coated Quantum Dots and 5­8 are available online at http://ieeexplore. ieee.org. Digital Object Identifier 10.1109/TNB.2006

  16. Mechanistic Insights into the Formation of InP Quantum Dots

    E-Print Network [OSTI]

    Allen, Peter M.

    The molecular mechanism of InP colloidal quantum dot (QD) syntheses was investigated by NMR spectroscopy. Unlike methods for monodisperse PbSe and CdSe, existing InP syntheses result in total depletion of molecular phosphorous ...

  17. Two photon luminescence from quantum dots using broad and narrowband ultrafast laser pulses 

    E-Print Network [OSTI]

    Balasubramanian, Haribhaskar

    2009-05-15

    semiconductor nanocrystals or quantum dots (QD’s) both theoretically and experimentally. Compared to standard organic dyes, QD’s possess a relatively broad, uniform spectral response that enables better use of the full bandwidth from the broadband laser...

  18. Solar Hydrogen Production Using Carbon Quantum Dots and a Molecular Nickel Catalyst

    E-Print Network [OSTI]

    Martindale, Benjamin C. M.; Hutton, Georgina A. M.; Caputo, Christine A.; Reisner, Erwin

    2015-04-13

    Carbon quantum dots (CQDs) are established as excellent photosensitizers in combination with a molecular catalyst for solar light driven hydrogen production in aqueous solution. The inexpensive CQDs can be prepared by straightforward thermolysis...

  19. Developing an array of site-controlled pyramidal quantum dots emitting polarization-entangled photons

    SciTech Connect (OSTI)

    Juska, G.; Dimastrodonato, V.; Mereni, L. O.; Gocalinska, A.; Pelucchi, E. [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland)

    2013-12-04

    We present a site-controlled, highly symmetric quantum dot system with a density of at least 15 % of polarization-entangled photon emitters. Fidelity values of the entangled state as high as 0.721±0.043 were found.

  20. Narrow-Band Absorption-Enhanced Quantum Dot/J-Aggregate Conjugates

    E-Print Network [OSTI]

    Walker, Brian J.

    We report narrow-band absorption enhancement of semiconductor nanocrystals via Förster resonance energy transfer from cyanine J-aggregates. These J-aggregated dyes associate electrostatically with short quantum-dot (QD) ...

  1. The physics and chemistry of transport in CdSe quantum dot solids

    E-Print Network [OSTI]

    Jarosz, Mirna, 1981-

    2004-01-01

    Semiconductor quantum dots (QDs) have tunable opto-electronic properties and can be chemically synthesized and manipulated with ease, making them a promising novel material for many diverse applications. An understanding ...

  2. Efficient light emitting devices utilizing CdSe(ZnS) quantum dots in organic host matrices

    E-Print Network [OSTI]

    Coe-Sullivan, Seth (Seth Alexander)

    2002-01-01

    We demonstrate efficient electroluminescence from thin film structures containing core-shell CdSe(ZnS) quantum dots dispersed in molecular organic host materials. In the most efficient devices, excitons are created on the ...

  3. Electrical excitation of colloidally synthesized quantum dots in metal oxide structures

    E-Print Network [OSTI]

    Wood, Vanessa Claire

    2010-01-01

    This thesis develops methods for integrating colloidally synthesized quantum dots (QDs) and metal oxides in optoelectronic devices, presents three distinct light emitting devices (LEDs) with metal oxides surrounding a QD ...

  4. R&D Magazine: Windows into Solar Power Sources with Quantum Dots

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    30, 2015 R&D Magazine: Windows into Solar Power Sources with Quantum Dots A luminescent solar concentrator is an emerging sunlight harvesting technology that has the potential to...

  5. Enhanced ripening behavior of Mg-doped CdSe quantum dots

    E-Print Network [OSTI]

    Kim, Tae-Geun

    In this study, CdO and Mg acetate were added into a mixture of paraffin oil and oleic acid (45:5) by 5 and 1 mEnhanced ripening behavior of Mg-doped CdSe quantum dots Yun-Mo Sung,a) Woo-Chul Kwak, and Woong November 2007; accepted 24 March 2008) Pure CdSe and Mg-doped CdSe nanocrystal quantum dots were

  6. Reach of Environmental Influences on the Indistinguishability of Single Photons from Quantum Dots

    E-Print Network [OSTI]

    Huber, Tobias; Föger, Daniel; Solomon, Glenn; Weihs, Gregor

    2015-01-01

    In this letter, we present a detailed, all optical study of the influence of different excitation schemes on the indistinguishability of single photons from a single InAs quantum dot. For this study, we measure the Hong-Ou-Mandel interference of consecutive photons from the spontaneous emission of an InAs quantum dot state under various excitation schemes and different excitation conditions and give a comparison.

  7. Electronic waiting-time distribution of a quantum-dot spin valve

    E-Print Network [OSTI]

    Björn Sothmann

    2014-10-27

    We discuss the electronic waiting-time distribution of a quantum-dot spin valve, i.e. a single-level quantum dot coupled to two ferromagnetic electrodes with magnetizations that can point in arbitrary directions. We demonstrate that the rich transport physics of this setup such as dynamical channel blockade and spin precession in an interaction-driven exchange field shows up in the waiting-time distribution and analyze the conditions necessary to observe the various effects.

  8. Quantum Dot–Bridge–Fullerene Heterodimers with Controlled Photoinduced Electron Transfer

    SciTech Connect (OSTI)

    Cotlet, M.; Xu, Z.

    2011-06-27

    A series of donor-bridge-acceptor systems in the form of core/shell CdSe/ZnS quantum dot-bridge-fullerene heterodimers (see picture) with varying bridge length and varying quantum dot size were self-assembled by a surface-based stepwise method to demonstrate control of the rate and of the magnitude of fluctuations of photoinduced electron transfer at the single-molecule level.

  9. Final Progress Report for Project Entitled: Quantum Dot Tracers for Use in Engineered Geothermal Systems

    SciTech Connect (OSTI)

    Rose, Peter; Bartl, Michael; Reimus, Paul; Williams, Mark; Mella, Mike

    2015-09-12

    The objective of this project was to develop and demonstrate a new class of tracers that offer great promise for use in characterizing fracture networks in EGS reservoirs. From laboratory synthesis and testing through numerical modeling and field demonstrations, we have demonstrated the amazing versatility and applicability of quantum dot tracers. This report summarizes the results of four years of research into the design, synthesis, and characterization of semiconductor nanocrystals (quantum dots) for use as geothermal tracers.

  10. Quantum Dot Solar Cells: High Efficiency through Multiple Exciton Generation

    SciTech Connect (OSTI)

    Hanna, M. C.; Ellingson, R. J.; Beard, M.; Yu, P.; Micic, O. I.; Nozik, A. J.; c.

    2005-01-01

    Impact ionization is a process in which absorbed photons in semiconductors that are at least twice the bandgap can produce multiple electron-hole pairs. For single-bandgap photovoltaic devices, this effect produces greatly enhanced theoretical thermodynamic conversion efficiencies that range from 45-85%, depending upon solar concentration, the cell temperature, and the number of electron-hole pairs produced per photon. For quantum dots (QDs), electron-hole pairs exist as excitons. We have observed astoundingly efficient multiple exciton generation (MEG) in QDs of PbSe (bulk Eg = 0.28 eV), ranging in diameter from 3.9 to 5.7nm (Eg = 0.73, 0.82, and 0.91 eV, respectively). The effective masses of electron and holes are about equal in PbSe, and the onset for efficient MEG occurs at about three times the QD HOMO-LUMO transition (its ''bandgap''). The quantum yield rises quickly after the onset and reaches 300% at 4 x Eg (3.64 eV) for the smallest QD; this means that every QD in the sample produces three electron-hole pairs/photon.

  11. Revolutionary Method for Increasing the Efficiency of White Light Quantum Dot LEDs

    SciTech Connect (OSTI)

    Duty, Chad E [ORNL; Bennett, Charlee J C [ORNL; Sabau, Adrian S [ORNL; Jellison Jr, Gerald Earle [ORNL; Boudreaux, Philip R [ORNL; Walker, Steven C [ORNL; Ott, Ronald D [ORNL

    2011-01-01

    Covering a light-emitting diode (LED) with quantum dots (QDs) can produce a broad spectrum of white light. However, current techniques for applying QDs to LEDs suffer from a high density of defects and a non-uniform distribution of QDs, which respec-tively diminish the efficiency and quality of emitted light. Oak Ridge National Laboratory (ORNL) has the unique capability to thermally anneal QD structures at extremely high power densities for very short durations. This process, called pulse thermal proc-essing (PTP), reduces the number of point defects while main-taining the size and shape of the original QD nanostructure. Therefore, the efficiency of the QD wavelength conversion layer is improved without altering the emission spectrum defined by the size distribution of the quantum dot nanoparticles. The cur-rent research uses a thermal model to predict annealing tempera-tures during PTP and demonstrates up to a 300% increase in pho-toluminescence for QDs on passive substrates

  12. Magnetic field induced quantum dot brightening in liquid crystal synergized magnetic and semiconducting nanoparticle composite assemblies

    SciTech Connect (OSTI)

    Amaral, Jose Jussi; Wan, Jacky; Rodarte, Andrea L.; Ferri, Christopher; Quint, Makiko T.; Pandolfi, Ronald J.; Scheibner, Michael; Hirst, Linda S.; Ghosh, Sayantani

    2014-10-22

    The design and development of multifunctional composite materials from artificial nano-constituents is one of the most compelling current research areas. This drive to improve over nature and produce ‘meta-materials’ has met with some success, but results have proven limited with regards to both the demonstration of synergistic functionalities and in the ability to manipulate the material properties post-fabrication and in situ. Here, magnetic nanoparticles (MNPs) and semiconducting quantum dots (QDs) are co-assembled in a nematic liquid crystalline (LC) matrix, forming composite structures in which the emission intensity of the quantum dots is systematically and reversibly controlled with a small applied magnetic field (<100 mT). This magnetic field-driven brightening, ranging between a two- to three-fold peak intensity increase, is a truly cooperative effect: the LC phase transition creates the co-assemblies, the clustering of the MNPs produces LC re-orientation at atypical low external field, and this re-arrangement produces compaction of the clusters, resulting in the detection of increased QD emission. These results demonstrate a synergistic, reversible, and an all-optical process to detect magnetic fields and additionally, as the clusters are self-assembled in a fluid medium, they offer the possibility for these sensors to be used in broad ranging fluid-based applications.

  13. A finite element analysis of a silicon based double quantum dot structure

    E-Print Network [OSTI]

    S. Rahman; J. Gorman; C. H. W. Barnes; D. A. Williams; H. P. Langtangen

    2006-04-06

    We present the results of a finite-element solution of the Laplace equation for the silicon-based trench-isolated double quantum-dot and the capacitively-coupled single-electron transistor device architecture. This system is a candidate for charge and spin-based quantum computation in the solid state, as demonstrated by recent coherent-charge oscillation experiments. Our key findings demonstrate control of the electric potential and electric field in the vicinity of the double quantum-dot by the electric potential applied to the in-plane gates. This constitutes a useful theoretical analysis of the silicon-based architecture for quantum information processing applications.

  14. Quantum coherence in semiconductor nanostructures for improved lasers and detectors.

    SciTech Connect (OSTI)

    Chow, Weng Wah Dr. (; .); Lyo, Sungkwun Kenneth; Cederberg, Jeffrey George; Modine, Normand Arthur; Biefeld, Robert Malcolm

    2006-02-01

    The potential for implementing quantum coherence in semiconductor self-assembled quantum dots has been investigated theoretically and experimentally. Theoretical modeling suggests that coherent dynamics should be possible in self-assembled quantum dots. Our experimental efforts have optimized InGaAs and InAs self-assembled quantum dots on GaAs for demonstrating coherent phenomena. Optical investigations have indicated the appropriate geometries for observing quantum coherence and the type of experiments for observing quantum coherence have been outlined. The optical investigation targeted electromagnetically induced transparency (EIT) in order to demonstrate an all optical delay line.

  15. Photo-modulated thin film transistor based on dynamic charge transfer within quantum-dots-InGaZnO interface

    SciTech Connect (OSTI)

    Liu, Xiang; Yang, Xiaoxia; Liu, Mingju; Tao, Zhi; Wei, Lei Li, Chi Zhang, Xiaobing; Wang, Baoping; Dai, Qing; Nathan, Arokia

    2014-03-17

    The temporal development of next-generation photo-induced transistor across semiconductor quantum dots and Zn-related oxide thin film is reported in this paper. Through the dynamic charge transfer in the interface between these two key components, the responsibility of photocurrent can be amplified for scales of times (?10{sup 4}?A/W 450?nm) by the electron injection from excited quantum dots to InGaZnO thin film. And this photo-transistor has a broader waveband (from ultraviolet to visible light) optical sensitivity compared with other Zn-related oxide photoelectric device. Moreover, persistent photoconductivity effect can be diminished in visible waveband which lead to a significant improvement in the device's relaxation time from visible illuminated to dark state due to the ultrafast quenching of quantum dots. With other inherent properties such as integrated circuit compatible, low off-state current and high external quantum efficiency resolution, it has a great potential in the photoelectric device application, such as photodetector, phototransistor, and sensor array.

  16. Zeeman energy and spin relaxation in a one-electron quantum dot

    E-Print Network [OSTI]

    R. Hanson; B. Witkamp; L. M. K. Vandersypen; L. H. Willems van Beveren; J. M. Elzerman; L. P. Kouwenhoven

    2003-11-10

    We have measured the relaxation time, T1, of the spin of a single electron confined in a semiconductor quantum dot (a proposed quantum bit). In a magnetic field, applied parallel to the two-dimensional electron gas in which the quantum dot is defined, Zeeman splitting of the orbital states is directly observed by measurements of electron transport through the dot. By applying short voltage pulses, we can populate the excited spin state with one electron and monitor relaxation of the spin. We find a lower bound on T1 of 50 microseconds at 7.5 T, only limited by our signal-to-noise ratio. A continuous measurement of the charge on the dot has no observable effect on the spin relaxation.

  17. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

    SciTech Connect (OSTI)

    Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep

    2013-01-28

    We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

  18. Evaluating charge noise acting on semiconductor quantum dots in the circuit quantum electrodynamics architecture

    SciTech Connect (OSTI)

    Basset, J.; Stockklauser, A.; Jarausch, D.-D.; Frey, T.; Reichl, C.; Wegscheider, W.; Wallraff, A.; Ensslin, K.; Ihn, T.

    2014-08-11

    We evaluate the charge noise acting on a GaAs/GaAlAs based semiconductor double quantum dot dipole-coupled to the voltage oscillations of a superconducting transmission line resonator. The in-phase (I) and the quadrature (Q) components of the microwave tone transmitted through the resonator are sensitive to charging events in the surrounding environment of the double dot with an optimum sensitivity of 8.5×10{sup ?5}?e/?(Hz). A low frequency 1/f type noise spectrum combined with a white noise level of 6.6×10{sup ?6} e{sup 2}/Hz above 1?Hz is extracted, consistent with previous results obtained with quantum point contact charge detectors on similar heterostructures. The slope of the 1/f noise allows to extract a lower bound for the double-dot charge qubit dephasing rate which we compare to the one extracted from a Jaynes-Cummings Hamiltonian approach. The two rates are found to be similar emphasizing that charge noise is the main source of dephasing in our system.

  19. Prediction of a strain-induced conduction-band minimum in embedded quantum dots

    SciTech Connect (OSTI)

    Williamson, A.J.; Zunger, A.; Canning, A.

    1998-02-01

    Free-standing InP quantum dots have previously been theoretically and experimentally shown to have a direct band gap across a large range of experimentally accessible sizes. We demonstrated that when these dots are embedded coherently within a GaP barrier material, the effects of quantum confinement in conjunction with coherent strain suggest there will be a critical diameter of dot ({approx}60 {Angstrom}), above which the dot is direct, type I, and below which it is indirect, type II. However, the strain in the system acts to produce another conduction state with an even lower energy, in which electrons are localized in small pockets at the interface between the InP dot and the GaP barrier. Since this conduction state is GaP X{sub 1c} derived and the highest occupied valence state is InP, {Gamma} derived, the fundamental transition is predicted to be indirect in both real and reciprocal space ({open_quotes}type II{close_quotes}) for all dot sizes. This effect is peculiar to the strained dot, and is absent in the freestanding dot. {copyright} {ital 1998} {ital The American Physical Society}

  20. Quantum-Dots Based Electrochemical Immunoassay of Interleukin-1?

    SciTech Connect (OSTI)

    Wu, Hong; Liu, Guodong; Wang, Jun; Lin, Yuehe

    2007-07-01

    We describe a quantum-dot (QD, CdSe@ZnS)-based electrochemical immunoassay to detect a protein biomarker, interleukin-1? (IL-1?). QD conjugated with anti-IL-1? antibody was used as a label in an immunorecognition event. After a complete sandwich immunoreaction among the primary IL-1? antibody (immobilized on the avidin-modified magnetic beads), IL-1?, and the QD-labeled secondary antibody, QD labels were attached to the magnetic-bead surface through the antibody-antigen immunocomplex. Electrochemical stripping analysis of the captured QDs was used to quantify the concentration of IL-1? after an acid-dissolution step. The streptavidin-modified magnetic beads and the magnetic separation platform were used to integrate a facile antibody immobilization (through a biotin/streptavidin interaction) with immunoreactions and the isolation of immunocomplexes from reaction solutions in the assay. The voltammetric response is highly linear over the range of 0.5 to 50 ng mL-1 IL 1?, and the limit of detection is estimated to be 0.3 ng mL-1 (18 pM). This QD-based electrochemical immunoassay shows great promise for rapid, simple, and cost-effective analysis of protein biomarkers.

  1. g-factor anisotropy in nanowire-based InAs quantum dots

    SciTech Connect (OSTI)

    D'Hollosy, Samuel; Fábián, Gábor; Baumgartner, Andreas; Schönenberger, Christian; Nygård, Jesper

    2013-12-04

    The determination and control of the electron g-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the g-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the g-factor from the splitting of Kondo resonances and find that it varies continuously in the range between |g*| = 5 and 15.

  2. Fast Electrical Control of a Quantum Dot Strongly Coupled to a Nano-resonator

    E-Print Network [OSTI]

    Andrei Faraon; Arka Majumdar; Hyochul Kim; Pierre Petroff; Jelena Vuckovic

    2009-06-03

    The resonance frequency of an InAs quantum dot strongly coupled to a GaAs photonic crystal cavity was electrically controlled via quantum confined Stark effect. Stark shifts up to 0.3meV were achieved using a lateral Schottky electrode that created a local depletion region at the location of the quantum dot. We report switching of a probe laser coherently coupled to the cavity up to speeds as high as 150MHz, limited by the RC constant of the transmission line. The coupling rate and the magnitude of the Stark shift with electric field were investigated while coherently probing the system.

  3. Advanced method for increasing the efficiency of white light quantum dot LEDs

    SciTech Connect (OSTI)

    Duty, Chad E [ORNL; Bennett, Charlee J C [ORNL; Sabau, Adrian S [ORNL; Jellison Jr, Gerald Earle [ORNL; Boudreaux, Philip R [ORNL; Walker, Steven C [ORNL; Ott, Ronald D [ORNL

    2011-01-01

    Covering a light-emitting diode (LED) with quantum dots (QDs) can produce a broad spectrum of white light. However, current techniques for applying QDs to LEDs suffer from a high density of defects and a non-uniform distribution of QDs, which, respectively, diminish the efficiency and quality of emitted light. Oak Ridge National Laboratory (ORNL) has the unique capability to thermally anneal QD structures at extremely high power densities for very short durations. This process, called pulse thermal processing (PTP), reduces the number of point defects while maintaining the size and shape of the original QD nanostructure. Therefore, the efficiency of the QD wavelength conversion layer is improved without altering the emission spectrum defined by the size distribution of theQD nanoparticles. The current research uses a thermal model to predict annealing temperatures during PTP and demonstrates up to a 300% increase in photoluminescence for QDs on passive substrates.

  4. Seeding of InP islands on InAs quantum dot templates

    SciTech Connect (OSTI)

    Medeiros-Ribeiro, G.; Maltez, R. L.; Bernussi, A. A.; Ugarte, D.; de Carvalho, W.

    2001-06-01

    The ability of stacking layers of islands and their corresponding alignment have prompted a number of studies. The main focus so far has been on stacking self-assembled quantum dot (QD) layers of the same material and composition. Our goal is to create systems of coupled QDs of different electronic properties, aiming at hybridization of their different electronic levels. In this work, we investigate the early stages of the coupling of alternate InAs{endash}InP QD layers through a GaAs spacer layer. We have found that by using an InAs layer containing QDs as seeds, we can control the size, shape and density of InP islands by varying the spacer thickness. We have observed a significant improvement of the InP island size uniformity, as well as an induced size reduction, thus providing an extra degree of tunability previously available only through growth kinetics. {copyright} 2001 American Institute of Physics.

  5. Inhibition of plasmonically enhanced interdot energy transfer in quantum dot solids via photo-oxidation

    SciTech Connect (OSTI)

    Sadeghi, S. M.; Nejat, A.; West, R. G.

    2012-11-15

    We studied the impact of photophysical and photochemical processes on the interdot Forster energy transfer in monodisperse CdSe/ZnS quantum dot solids. For this, we investigated emission spectra of CdSe/ZnS quantum dot solids in the vicinity of gold metallic nanoparticles coated with chromium oxide. The metallic nanoparticles were used to enhance the rate of the energy transfer between the quantum dots, while the chromium oxide coating led to significant increase of their photo-oxidation rates. Our results showed that irradiation of such solids with a laser beam can lead to unique spectral changes, including narrowing and blue shift. We investigate these effects in terms of inhibition of the plasmonically enhanced interdot energy transfer between quantum dots via the chromium-oxide accelerated photo-oxidation process. We demonstrate this considering energy-dependent rate of the interdot energy transfer process, plasmonic effects, and the way photo-oxidation enhances non-radiative decay rates of quantum dots with different sizes.

  6. Semiconductor Quantum Dots and Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells

    SciTech Connect (OSTI)

    Nozik, Arthur J.; Beard, Matthew C.; Luther, Joseph M.; Law, Matt; Ellingson, Randy J.; Johnson, Justin C.

    2010-10-14

    Here, we will first briefly summarize the general principles of QD synthesis using our previous work on InP as an example. Then we will focus on QDs of the IV-VI Pb chalcogenides (PbSe, PbS, and PbTe) and Si QDs because these were among the first QDs that were reported to produce multiple excitons upon absorbing single photons of appropriate energy (a process we call multiple exciton generation (MEG)). We note that in addition to Si and the Pb-VI QDs, two other semiconductor systems (III-V InP QDs(56) and II-VI core-shell CdTe/CdSe QDs(57)) were very recently reported to also produce MEG. Then we will discuss photogenerated carrier dynamics in QDs, including the issues and controversies related to the cooling of hot carriers and the magnitude and significance of MEG in QDs. Finally, we will discuss applications of QDs and QD arrays in novel quantum dot PV cells, where multiple exciton generation from single photons could yield significantly higher PV conversion efficiencies.

  7. Tuning the Optical Properties of Nanoscale Materials on Surfaces Through Controlled Exchange Reactions on Cadmium Selenide Quantum Dots and Patterning of Gold and QD Nanoparticle Arrays 

    E-Print Network [OSTI]

    Pravitasari, Arika

    2013-11-11

    This work focused on the integration of CdSe quantum dots (QDs) and Au nanoparticles (NPs) as building blocks for the development of quantum dot and plasmonic based optical and sensing devices. The manipulation of nanomaterials ...

  8. NREL Researchers Demonstrate External Quantum Efficiency Surpassing 100% in a Quantum Dot Solar Cell (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-12-01

    A new device that produces and collects multiple electrons per photon could yield inexpensive, high-efficiency photovoltaics. A new device developed through research at the National Renewable Energy Laboratory (NREL) reduces conventional losses in photovoltaic (PV) solar cells, potentially increasing the power conversion efficiency-but not the cost-of the solar cells. Solar cells convert optical energy from the sun into usable electricity; however, almost 50% of the incident energy is lost as heat with present-day technologies. High-efficiency, multi-junction cells reduce this heat loss, but their cost is significantly higher. NREL's new device uses excess energy in solar photons to create extra charges rather than heat. This was achieved using 5-nanometer-diameter quantum dots of lead selenide (PbSe) tightly packed into a film. The researchers chemically treated the film, and then fabricated a device that yielded an external quantum efficiency (number of electrons produced per incident photon) exceeding 100%, a value beyond that of all current solar cells for any incident photon. Quantum dots are known to efficiently generate multiple excitons (a bound electron-hole pair) per absorbed high-energy photon, and this device definitively demonstrates the collection of multiple electrons per photon in a PV cell. The internal quantum efficiency corrects for photons that are not absorbed in the photoactive layer and shows that the PbSe film generates 30% to 40% more electrons in the high-energy spectral region than is possible with a conventional solar cell. While the unoptimized overall power conversion efficiency is still low (less than 5%), the results have important implications for PV because such high quantum efficiency can lead to more electrical current produced than possible using present technologies. Furthermore, this fabrication is also amenable to inexpensive, high-throughput roll-to-roll manufacturing.

  9. Complete All-Optical Quantum Control of Electron Spins in InAs/GaAs Quantum Dot Molecule

    E-Print Network [OSTI]

    Guy Z. Cohen

    2015-01-08

    The spin states of electrons and holes confined in InAs quantum dot molecules have recently come to fore as a promising system for the storage or manipulation of quantum information. We describe here a feasible scheme for complete quantum optical control of two electron spin qubits in two vertically-stacked singly-charged InAs quantum dots coupled by coherent electron tunneling. With an applied magnetic field transverse to the growth direction, we construct a universal set of gates that corresponds to the possible Raman transitions between the spin states. We detail the procedure to decompose a given two-qubit unitary operation, so as to realize it with a successive application of up to 8 of these gates. We give the pulse shapes for the laser pulses used to implement this universal set of gates and demonstrate the realization of the two-qubit quantum Fourier transform with fidelity of 0.881 and duration of 414 ps. Our proposal therefore offers an accessible path to universal computation in quantum dot molecules and points to the advantages of using pulse shaping incoherent manipulation of optically active quantum dots to mitigate the negative effects of unintended dynamics and spontaneous emission.

  10. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect (OSTI)

    Prestat, E., E-mail: eric.prestat@gmail.com; Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A., E-mail: andre.barski@cea.com [INAC, SP2M, CEA and Université Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France)

    2014-03-10

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  11. Single photoelectron spin detection and angular momentum transfer in a gate defined quantum dot

    E-Print Network [OSTI]

    Takafumi Fujita; Kazuhiro Morimoto; Haruki Kiyama; Giles Allison; Marcus Larsson; Arne Ludwig; Sascha R. Valentin; Andreas D. Wieck; Akira Oiwa; Seigo Tarucha

    2015-04-14

    Recent innovations in fabricating nanoscale confined spin systems have enabled investigation of fundamental quantum correlations between single quanta of photons and matter states. Realization of quantum state transfer from photon polarization to electron spin using gate defined quantum dots (QDs) may give evidence of preserved coherence of angular momentum basis states at the photon-spin interface. The interface would enlarge the concept of quantum information technology, in which single photogenerated electron spins are manipulated with the dots, but this remains a serious challenge. Here, we report the detection of single electron spins generated by polarized single photons via a double QD (DQD) to verify the angular momentum transfer from single photons to single electrons. Pauli spin blockade (PSB) is used to project the photoelectron spin state onto the up or down spin state. Our result promises the realization of coherent quantum state transfer and development of hybrid photon and spin quantum technology.

  12. Non-Hermitian scattering theory: Resonant tunneling probability amplitude in a quantum dot Hadas Barkay, Edvardas Narevicius, and Nimrod Moiseyev*

    E-Print Network [OSTI]

    Narevicius, Edvardas

    properties of quantum dots, phenomena such as tunneling of electrons must be characterized. Phase, in a manner that enabled them to control the potential of the electrons trapped in it by varying the plungerNon-Hermitian scattering theory: Resonant tunneling probability amplitude in a quantum dot Hadas

  13. Statistics of Coulomb-blockade peak spacings for a partially open quantum dot A. Kaminski and L. I. Glazman

    E-Print Network [OSTI]

    Glazman, Leonid

    Statistics of Coulomb-blockade peak spacings for a partially open quantum dot A. Kaminski and L. I by a sum of two terms. The first one is the electrostatic charging energy, which does not fluctuate all interactions except the charging energy are ignored . For a disordered or chaotic quantum dot

  14. Graphene quantum dots: Beyond a Dirac billiard Florian Libisch,1 Christoph Stampfer,2 and Joachim Burgdrfer1

    E-Print Network [OSTI]

    Florian, Libisch

    Graphene quantum dots: Beyond a Dirac billiard Florian Libisch,1 Christoph Stampfer,2 and Joachim confinement effects in phase-coherent graphene quantum dots with linear dimensions of 10­40 nm. We determine.45.Mt, 73.23. b, 81.05.Uw I. INTRODUCTION Graphene,1,2 the first true two-dimensional 2D solid

  15. Coupled electromechanical effects in wurtzite quantum dots with wetting layers in gate controlled electric fields: The multiband case

    E-Print Network [OSTI]

    Melnik, Roderick

    Coupled electromechanical effects in wurtzite quantum dots with wetting layers in gate controlled quantifies the electromechanical effects on the band structure of wurtzite quantum dots. c Systematic study online 25 September 2012 a b s t r a c t We quantify the influence of coupled electromechanical effects

  16. Large-Area (over 50 cm 50 cm) Freestanding Films of Colloidal InP/ ZnS Quantum Dots

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Large-Area (over 50 cm × 50 cm) Freestanding Films of Colloidal InP/ ZnS Quantum Dots Evren of flexible, freestanding films of InP/ZnS quantum dots (QDs) using fatty acid ligands across very large areas avoiding the need for ligand exchange. When pumped by a blue LED, these Cd-free QD films allow for high

  17. High-Efficiency Photoelectrocatalytic Hydrogen Generation Enabled by Palladium Quantum Dots-Sensitized TiO2 Nanotube Arrays

    E-Print Network [OSTI]

    Lin, Zhiqun

    High-Efficiency Photoelectrocatalytic Hydrogen Generation Enabled by Palladium Quantum Dots of hydrogen as a potential fuel for renewable energy.1 Among the various catalysts, the noble metal palladium ABSTRACT: TiO2 nanotube arrays (TNTAs) sensitized by palladium quantum dots (Pd QDs) exhibit highly

  18. Energy levels of double triangular graphene quantum dots

    SciTech Connect (OSTI)

    Liang, F. X.; Jiang, Z. T. Zhang, H. Y.; Li, S.; Lv, Z. T.

    2014-09-28

    We investigate theoretically the energy levels of the coupled double triangular graphene quantum dots (GQDs) based on the tight-binding Hamiltonian model. The double GQDs including the ZZ-type, ZA-type, and AA-type GQDs with the two GQDs having the zigzag or armchair boundaries can be coupled together via different interdot connections, such as the direct coupling, the chains of benzene rings, and those of carbon atoms. It is shown that the energy spectrum of the coupled double GQDs is the amalgamation of those spectra of the corresponding two isolated GQDs with the modification triggered by the interdot connections. The interdot connection is inclined to lift up the degeneracies of the energy levels in different degree, and as the connection changes from the direct coupling to the long chains, the removal of energy degeneracies is suppressed in ZZ-type and AA-type double GQDs, which indicates that the two coupled GQDs are inclined to become decoupled. Then we consider the influences on the spectra of the coupled double GQDs induced by the electric fields applied on the GQDs or the connection, which manifests as the global spectrum redistribution or the local energy level shift. Finally, we study the symmetrical and asymmetrical energy spectra of the double GQDs caused by the substrates supporting the two GQDs, clearly demonstrating how the substrates affect the double GQDs' spectrum. This research elucidates the energy spectra of the coupled double GQDs, as well as the mechanics of manipulating them by the electric field and the substrates, which would be a significant reference for designing GQD-based devices.

  19. Decoherence and Quantum Interference assisted electron trapping in a quantum dot

    E-Print Network [OSTI]

    Ahmed El Halawany; Michael N. Leuenberger

    2013-08-08

    We present a theoretical model for the dynamics of an electron that gets trapped by means of decoherence and quantum interference in the central quantum dot (QD) of a semiconductor nanoring (NR) made of five QDs, between 100 K and 300 K. The electron's dynamics is described by a master equation with a Hamiltonian based on the tight-binding model, taking into account electron-LO phonon interaction (ELOPI). Based on this configuration, the probability to trap an electron with no decoherence is almost 27%. In contrast, the probability to trap an electron with decoherence is 70% at 100 K, 63% at 200 K and 58% at 300 K. Our model provides a novel method of trapping an electron at room temperature.

  20. Engineering quantum dots for electrical control of the fine structure splitting

    E-Print Network [OSTI]

    Pooley, M A; Farrer, I; Ritchie, D A; Shields, A J

    2015-01-01

    We have studied the variation in fine-structure splitting (FSS) under application of vertical electric field in a range of quantum dots grown by different methods. In each sample we confirm that this energy splitting changes linearly over the field range we can access. We conclude that this linear tuning is a general feature of self-assembled quantum dots, observed under different growth conditions, emission wavelengths and in different material systems. Statistical measurements of characteristic parameters such as emission energy, Stark shift and FSS tuning are presented which may provide a guide for future attempts to increase the yield of quantum dots that can be tuned to a minimal value of FSS with vertical electric field.

  1. Engineering quantum dots for electrical control of the fine structure splitting

    E-Print Network [OSTI]

    M. A. Pooley; A. J. Bennett; I. Farrer; D. A. Ritchie; A. J. Shields

    2015-07-22

    We have studied the variation in fine-structure splitting (FSS) under application of vertical electric field in a range of quantum dots grown by different methods. In each sample we confirm that this energy splitting changes linearly over the field range we can access. We conclude that this linear tuning is a general feature of self-assembled quantum dots, observed under different growth conditions, emission wavelengths and in different material systems. Statistical measurements of characteristic parameters such as emission energy, Stark shift and FSS tuning are presented which may provide a guide for future attempts to increase the yield of quantum dots that can be tuned to a minimal value of FSS with vertical electric field.

  2. Mn solid solutions in self-assembled Ge/Si (001) quantum dot heterostructures

    SciTech Connect (OSTI)

    Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jamet, M. [Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)

    2012-12-10

    Heteroepitaxial Ge{sub 0.98}Mn{sub 0.02} quantum dots (QDs) on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was observed, with no indicators of second phase formation in the surface morphology. We show that Mn forms a dilute solid solution in the Ge quantum dot layer, and a significant fraction of the Mn partitions into a sparse array of buried, Mn-enriched silicide precipitates directly underneath a fraction of the Ge superdomes. The magnetic response from the ultra-thin film indicates the absence of robust room temperature ferromagnetism, perhaps due to anomalous intermixing of Si into the Ge quantum dots.

  3. Microscopic model for intersubband gain from electrically pumped quantum-dot structures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Michael, Stephan; Chow, Weng Wah; Schneider, Han Christian

    2014-10-03

    We study theoretically the performance of electrically pumped self-organized quantum dots as a gain material in the mid-IR range at room temperature. We analyze an AlGaAs/InGaAs based structure composed of dots-in-a-well sandwiched between two quantum wells. We numerically analyze a comprehensive model by combining a many-particle approach for electronic dynamics with a realistic modeling of the electronic states in the whole structure. We investigate the gain both for quasi-equilibrium conditions and current injection. Comparing different structures, we find that steady-state gain can only be realized by an efficient extraction process, which prevents an accumulation of electrons in continuum states, thatmore »make the available scattering pathways through the quantum dot active region too fast to sustain inversion.« less

  4. Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

    2015-09-08

    In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. We report ultra-fast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects ofmore »electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices.« less

  5. High fidelity ac gate operations of the quantum dot hybrid qubit

    E-Print Network [OSTI]

    Clement H. Wong

    2015-10-20

    Semiconductor quantum dots in silicon are promising qubits because of long spin coherence times and their potential for scalability. However, such qubits with complete electrical control and fidelities above the threshold for quantum error correction have not yet been achieved. We show theoretically that the threshold fidelity can be achieved with ac gate operation of the quantum dot hybrid qubit. Formed by three electrons in a double dot, this qubit is electrically controlled, does not require magnetic fields, and runs at GHz gate speeds. We analyze the decoherence caused by 1/f charge noise in this qubit, find parameters that minimize the charge noise dependence in the qubit frequency, and determine the optimal working points for ac gate operations that drive the detuning and tunnel coupling.

  6. Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix

    SciTech Connect (OSTI)

    Gruzintsev, A. N. Emelchenko, G. A.; Masalov, V. M.; Yakimov, E. E.; Barthou, C.; Maitre, A.

    2009-02-15

    The effect of the photonic band gap in the photonic crystal, the synthesized SiO{sub 2} opal with embedded CdSe/ZnS quantum dots, on its luminescence in the visible spectral region is studied. It is shown that the position of the photonic band gap in the luminescence and reflectance spectra for the infiltrated opal depends on the diameter of the constituent nanospheres and on the angle of recording the signal. The optimal conditions for embedding the CdSe/ZnS quantum dots from the solution into the opal matrix are determined. It is found that, for the opal-CdSe/ZnS nanocomposites, the emission intensity decreases and the luminescence decay time increases in the spatial directions, in which the spectral positions of the photonic band gap and the luminescence peak of the quantum dots coincide.

  7. Design of quantum dot lattices in amorphous matrices by ion beam irradiation

    SciTech Connect (OSTI)

    Buljan, M.; Bogdanovic-Radovic, I.; Karlusic, M.; Desnica, U. V.; Radic, N.; Jaksic, M.; Salamon, K.; Drazic, G.; Bernstorff, S.; Holy, V.

    2011-10-15

    We report on the highly controllable self-assembly of semiconductor quantum dots and metallic nanoparticles in a solid amorphous matrix, induced by ion beam irradiation of an amorphous multilayer. We demonstrate experimentally and theoretically a possibility to tune the basic structural properties of the quantum dots in a wide range. Furthermore, the sizes, distances, and arrangement type of the quantum dots follow simple equations dependent on the irradiation and the multilayer properties. We present a Monte Carlo model for the simulation and prediction of the structural properties of the materials formed by this method. The presented results enable engineering and simple production of functional materials or simple devices interesting for applications in nanotechnology.

  8. Colloidal quantum dot solar cells on curved and flexible substrates Illan J. Kramer, Gabriel Moreno-Bautista, James C. Minor, Damir Kopilovic, and Edward H. Sargent

    E-Print Network [OSTI]

    Sargent, Edward H. "Ted"

    .1063/1.4810176 Impact of CdSe/ZnS quantum dot spectrum converters on InGaP/GaAs/Ge multi-junction solar cells J. VacColloidal quantum dot solar cells on curved and flexible substrates Illan J. Kramer, Gabriel Moreno Articles you may be interested in Efficient, air-stable colloidal quantum dot solar cells encapsulated

  9. Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    used to measure the strain in InAs quantum dots grown in InP with a spatial resolution of 1 nmQuantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been

  10. The impact of disorder on charge transport in three dimensional quantum dot resonant tunneling structures

    SciTech Connect (OSTI)

    Puthen-Veettil, B. Patterson, R.; König, D.; Conibeer, G.; Green, M. A.

    2014-10-28

    Efficient iso-entropic energy filtering of electronic waves can be realized through nanostructures with three dimensional confinement, such as quantum dot resonant tunneling structures. Large-area deployment of such structures is useful for energy selective contacts but such configuration is susceptible to structural disorders. In this work, the transport properties of quantum-dot-based wide-area resonant tunneling structures, subject to realistic disorder mechanisms, are studied. Positional variations of the quantum dots are shown to reduce the resonant transmission peaks while size variations in the device are shown to reduce as well as broaden the peaks. Increased quantum dot size distribution also results in a peak shift to lower energy which is attributed to large dots dominating transmission. A decrease in barrier thickness reduces the relative peak height while the overall transmission increases dramatically due to lower “series resistance.” While any shift away from ideality can be intuitively expected to reduce the resonance peak, quantification allows better understanding of the tolerances required for fabricating structures based on resonant tunneling phenomena/.

  11. InP quantum dots: Electronic structure, surface effects, and the redshifted emission

    SciTech Connect (OSTI)

    Fu, H.; Zunger, A.

    1997-07-01

    We present pseudopotential plane-wave electronic-structure calculations on InP quantum dots in an effort to understand quantum confinement and surface effects and to identify the origin of the long-lived and redshifted luminescence. We find that (i) unlike the case in small GaAs dots, the lowest unoccupied state of InP dots is the {Gamma}{sub 1c}-derived direct state rather than the X{sub 1c}-derived indirect state and (ii) unlike the prediction of {bold k}{center_dot}{bold p} models, the highest occupied state in InP dots has a 1sd-type envelope function rather than a (dipole-forbidden) 1pf envelope function. Thus explanations (i) and (ii) to the long-lived redshifted emission in terms of an orbitally forbidden character can be excluded. Furthermore, (iii) fully passivated InP dots have no surface states in the gap. However, (iv) removal of the anion-site passivation leads to a P dangling bond (DB) state just above the valence band, which will act as a trap for photogenerated holes. Similarly, (v) removal of the cation-site passivation leads to an In dangling-bond state below the conduction band. While the energy of the In DB state depends only weakly on quantum size, its radiative lifetime increases with quantum size. The calculated {approximately}300-meV redshift and the {approximately}18 times longer radiative lifetime relative to the dot-interior transition for the 26-{Angstrom} dot with an In DB are in good agreement with the observations of full-luminescence experiments for unetched InP dots. Yet, (vi) this type of redshift due to surface defect is inconsistent with that measured in {ital selective} excitation for HF-etched InP dots. (vii) The latter type of ({open_quotes}resonant{close_quotes}) redshift is compatible with the calculated {ital screened} singlet-triplet splitting in InP dots, suggesting that the slow emitting state seen in selective excitation could be a triplet state. {copyright} {ital 1997} {ital The American Physical Society}

  12. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  13. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  14. Graphene quantum dots for valley-based quantum computing: A feasibility study

    E-Print Network [OSTI]

    G. Y. Wu; N. -Y. Lue; L. Chang

    2011-04-21

    At the center of quantum computing1 realization is the physical implementation of qubits - two-state quantum information units. The rise of graphene2 has opened a new door to the implementation. Because graphene electrons simulate two-dimensional relativistic particles with two degenerate and independent energy valleys,3 a novel degree of freedom (d.o.f.), namely, the valley state of an electron, emerges as a new information carrier.4 Here, we expand the Loss-DiVincenzo quantum dot (QD) approach in electron spin qubits,5,6 and investigate the feasibility of double QD (DQD) structures in gapful graphene as "valley qubits", with the logic 0 / 1 states represented by the "valley" singlet / triplet pair. This generalization is characterized by 1) valley relaxation time ~ O(ms), and 2) electric qubit manipulation on the time scale ~ ns, based on the 1st-order "relativistic effect" unique in graphene. A potential for valley-based quantum computing is present.

  15. Quasiresonant Excitation of InP/InGaP Quantum Dots Using Second Harmonic Generated in a Photonic Crystal Cavity

    E-Print Network [OSTI]

    Buckley, Sonia; Hatami, Fariba; Vuckovic, Jelena

    2012-01-01

    Indistinguishable single photons are necessary for quantum information processing applications. Resonant or quasiresonant excitation of single quantum dots provides greater single photon indistinguishability than incoherent pumping, but is also more challenging experimentally. Here, we demonstrate high signal to noise quasiresonant excitation of InP/InGaP quantum dots. The excitation is provided via second harmonic generated from a telecommunications wavelength laser resonant with the fundamental mode of a photonic crystal cavity, fabricated at twice the quantum dot transition wavelength. The second harmonic is generated using the \\chi(2) nonlinearity of the InGaP material matrix.

  16. Quasiresonant Excitation of InP/InGaP Quantum Dots Using Second Harmonic Generated in a Photonic Crystal Cavity

    E-Print Network [OSTI]

    Sonia Buckley; Kelley Rivoire; Fariba Hatami; Jelena Vuckovic

    2012-10-03

    Indistinguishable single photons are necessary for quantum information processing applications. Resonant or quasiresonant excitation of single quantum dots provides greater single photon indistinguishability than incoherent pumping, but is also more challenging experimentally. Here, we demonstrate high signal to noise quasiresonant excitation of InP/InGaP quantum dots. The excitation is provided via second harmonic generated from a telecommunications wavelength laser resonant with the fundamental mode of a photonic crystal cavity, fabricated at twice the quantum dot transition wavelength. The second harmonic is generated using the \\chi(2) nonlinearity of the InGaP material matrix.

  17. Longitudinal wave function control in single quantum dots with an applied magnetic field

    E-Print Network [OSTI]

    Shuo Cao; Jing Tang; Yunan Gao; Yue Sun; Kangsheng Qiu; Yanhui Zhao; Min He; Jin-An Shi; Lin Gu; David A. Williams; Weidong Sheng; Kuijuan Jin; Xiulai Xu

    2015-01-29

    Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots.

  18. Effect of matrix on InAs self-organized quantum dots on InP substrate

    SciTech Connect (OSTI)

    Ustinov, V.M.; Weber, E.R.; Ruvimov, S.; Liliental-Weber, Z.; Zhukov, A.E.; Egorov, A.Y.; Kovsh, A.R.; Tsatsulnikov, A.F.; Kopev, P.S.

    1998-01-01

    InAs self-organized quantum dots in In{sub 0.53}Ga{sub 0.47}As and In{sub 0.52}Al{sub 0.48}As matrices have been grown on InP substrates by molecular beam epitaxy. The dot size in InGaAs has been found to be 3{endash}4 times larger, but the areal density about an order of magnitude smaller than that in InAlAs. Low-temperature photoluminescence (PL) of the InAs/InGaAs quantum dots is characterized by a narrow (35 meV) PL line as compared to that of InAs/InAlAs quantum dots (170 meV). Quantum dot formation increases the carrier localization energy as compared to quantum well structures with the same InAs thickness in a similar manner for both InAs/InGaAs and InAs/InAlAs structures. The effect of the barrier band gap on the optical transition energy is qualitatively the same for quantum well and quantum dot structures. The results demonstrate a possibility of controlling the quantum dot emission wavelength by varying the matrix composition. {copyright} {ital 1998 American Institute of Physics.}

  19. Scalable quantum computing based on stationary spin qubits in coupled quantum dots inside double-sided optical microcavities

    E-Print Network [OSTI]

    Hai-Rui Wei; Fu-Guo Deng

    2014-12-12

    Quantum logic gates are the key elements in quantum computing. Here we investigate the possibility of achieving a scalable and compact quantum computing based on stationary electron-spin qubits, by using the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics. We design the compact quantum circuits for implementing universal and deterministic quantum gates for electron-spin systems, including the two-qubit CNOT gate and the three-qubit Toffoli gate. They are compact and economic, and they do not require additional electron-spin qubits. Moreover, our devices have good scalability and are attractive as they both are based on solid-state quantum systems and the qubits are stationary. They are feasible with the current experimental technology, and both high fidelity and high efficiency can be achieved when the ratio of the side leakage to the cavity decay is low.

  20. Manipulation of electron orbitals in hard-wall InAs/InP nanowire quantum dots

    E-Print Network [OSTI]

    Roddaro, Stefano; Ercolani, Daniele; Sorba, Lucia; Beltram, Fabio

    2010-01-01

    We present a novel technique for the manipulation of the energy spectrum of hard-wall InAs/InP nanowire quantum dots. By using two local gate electrodes, we induce a strong electric dipole moment on the dot and demonstrate the controlled modification of its electronic orbitals. Our approach allows us to dramatically enhance the single-particle energy spacing between the first two quantum levels in the dot and thus to increment the working temperature of our InAs/InP single-electron transistors. Our devices display a very robust modulation of the conductance even at liquid nitrogen temperature, while allowing an ultimate control of the electron filling down to the last free carrier. Potential further applications of the technique to time-resolved spin manipulation are also discussed.

  1. Manipulation of electron orbitals in hard-wall InAs/InP nanowire quantum dots

    E-Print Network [OSTI]

    Stefano Roddaro; Andrea Pescaglini; Daniele Ercolani; Lucia Sorba; Fabio Beltram

    2010-12-22

    We present a novel technique for the manipulation of the energy spectrum of hard-wall InAs/InP nanowire quantum dots. By using two local gate electrodes, we induce a strong electric dipole moment on the dot and demonstrate the controlled modification of its electronic orbitals. Our approach allows us to dramatically enhance the single-particle energy spacing between the first two quantum levels in the dot and thus to increment the working temperature of our InAs/InP single-electron transistors. Our devices display a very robust modulation of the conductance even at liquid nitrogen temperature, while allowing an ultimate control of the electron filling down to the last free carrier. Potential further applications of the technique to time-resolved spin manipulation are also discussed.

  2. Coherent control and interplay of three-electron spin states in a triple quantum dot

    E-Print Network [OSTI]

    Gaudreau, L; Kam, A; Aers, G C; Studenikin, S A; Zawadzki, P; Pioro-Ladrière, M; Wasilewski, Z R; Sachrajda, A S

    2011-01-01

    Spin qubits involving one or two spins have emerged as potential building blocks for quantum information processing applications, resulting in many double quantum dot (DQD) studies. Coherent control of a two-electron spin qubit close to the singlet/triplet (S/T+) anticrossing through Landau-Zener-St\\"uckelberg (LZS) oscillations has been studied theoretically and demonstrated experimentally in DQDs. Recent advances with triple quantum dot (TQD) technology have suggested additional advantages, such as their potential for encoding quantum information, that may soon be possible. Towards these goals we demonstrate, for for first time, the coherent manipulation of three-particle spin states in a TQD where all three spins play a role.

  3. Effect of parameter variations on the static and dynamic behaviour of a self-assembled quantum-dot laser using circuit-level modelling

    SciTech Connect (OSTI)

    Razm-Pa, M; Emami, F

    2015-01-31

    We report a new circuit model for a self-assembled quantum-dot (SAQD) laser made of InGaAs/GaAs structures. The model is based on the excited state and standard rate equations, improves the previously suggested circuit models and also provides and investigates the performance of this kind of laser. The carrier dynamic effects on static and dynamic characteristics of a SAQD laser are analysed. The phonon bottleneck problem is simulated. Quantum-dot lasers are shown to be quite sensitive to the crystal quality outside and inside quantum dots. The effects of QD coverage factor, inhomogeneous broadening, the physical source of which is the size fluctuation of quantum dots formed by self-assembly of atoms, and cavity length on the SAQD laser characteristics are analysed. The results of simulation show that an increase in the cavity length and in the QD coverage factor results in the growth of the output power. On the other hand, an increase in the coverage factor and a degradation of inhomogeneous broadening lead to an increase in the modulation bandwidth. The effect of the QD height (cylindrical shape) and stripe width of the laser cavity on QD laser modulation is also analysed. (lasers)

  4. Spectral multiplexing using quantum dot tagged microspheres with diffusing colloidal probe microscopy 

    E-Print Network [OSTI]

    Muthukumar, Shankarapandian

    2009-05-15

    Se/ZnS quantum dots is shown in Figure 11. A stirrer was connected to a stir bar made of aluminium to stir the reaction sample. A heating mantle filled with a bismuth alloy served as the heat bath. A temperature probe and controller were used to monitor...

  5. Photophysics of dopamine-modified quantum dots and effects on biological

    E-Print Network [OSTI]

    Minarik, William

    between a small molecule (the neurotransmitter dopamine) and CdSe/ZnS QDs. QD­dopamine conjugates label that has been studied extensively for the creation of solar cells and optoelectronic devices (see ref. 1 established with CdSe and CdSe/ZnS quantum dots (QDs)3­5 , its application to living systems has not yet been

  6. Role of Symmetry Breaking on the Optical Transitions in Lead-Salt Quantum Dots

    E-Print Network [OSTI]

    Van Stryland, Eric

    Role of Symmetry Breaking on the Optical Transitions in Lead-Salt Quantum Dots Gero Nootz to explain optical transitions in lead-salt QDs. Thus, while the band anisotropy of the bulk semiconductor functions. These studies clarify the controversy of the origin of spectral features in lead-salt QDs

  7. Study of the self-organization processes in lead sulfide quantum dots

    SciTech Connect (OSTI)

    Tarasov, S. A., E-mail: SATarasov@mail.ru; Aleksandrova, O. A.; Maksimov, A. I.; Maraeva, E. V.; Matyushkin, L. B.; Men’kovich, E. A.; Moshnikov, V. A. [St. Petersburg Electrotechnical University LETI (Russian Federation); Musikhin, S. F. [St. Petersburg State Polytechnic University (Russian Federation)

    2014-12-15

    A procedure is described for the synthesis of nanoparticles based on lead chalcogenides. The procedure combines the synthesis of colloidal quantum dots (QDs) in aqueous solutions with simultaneous organization of the QDs into ordered arrays. The processes of the self-organization of QDs are analyzed at the nano- and microscopic levels by the photoluminescence method, atomic-force microscopy, and optical microscopy.

  8. Controlled placement of colloidal quantum dots in sub-15 nm clusters

    E-Print Network [OSTI]

    Han, Hee-Sun

    We demonstrated a technique to control the placement of 6 nm-diameter CdSe and 5 nm-diameter CdSe/CdZnS colloidal quantum dots (QDs) through electron-beam lithography. This QD-placement technique resulted in an average of ...

  9. Deep-level transient spectroscopy of InAs/GaAs quantum dot superlattices

    SciTech Connect (OSTI)

    Sobolev, M. M.; Nevedomskii, V. N.; Zolotareva, R. V.; Vasil'ev, A. P.; Ustinov, V. M.

    2014-02-21

    Deep level transient spectroscopy (DLTS) has been applied to study the carrier emission from states of a 10-layer system of tunnel-coupled vertically correlated quantum dots (VCQDs) in p-n InAs/GaAs heterostructures with different widths of GaAs spacers under varied reverse bias (U{sub r}) and filling voltage pulse U{sub f}.

  10. High-harmonic generation by quantum-dot nanorings Ioan Bldea,1,

    E-Print Network [OSTI]

    Moiseyev, Nimrod

    High-harmonic generation by quantum-dot nanorings Ioan Bâldea,1, * Ashish K. Gupta,2, Lorenz S with a circularly polarized light. The results show that the high-harmonic generation (HHG) spectra obtained from of the high-order harmonics is studied, and it is shown that it can increase the intensity of the high

  11. Shot noise in tunneling through a quantum dot array G. Kiesslich*; 1

    E-Print Network [OSTI]

    Hohls, Frank

    Shot noise in tunneling through a quantum dot array G. Kiesslich*; 1 , A. Wacker1 , E. Schæll1 , A 2003 PACS 72.70.+m, 73.40.Gk, 73.63.Kv The shot noise suppression in a sample containing a layer be qualitatively reproduced by an analy- tical expression. 1 Introduction Shot noise measurements provide

  12. Shot noise in tunneling through a single InAs quantum dot Frank Hohls

    E-Print Network [OSTI]

    Hohls, Frank

    Shot noise in tunneling through a single InAs quantum dot Frank Hohls , André Nauen , Niels Maire by measuring the shot noise of the current. We observe an approximately linear voltage dependence of both the shot noise, characterized by the Fano factor, and the tunneling current itself. We ascribe

  13. Shot noise in self-assembled InAs quantum dots A. Nauen,1,

    E-Print Network [OSTI]

    Hohls, Frank

    Shot noise in self-assembled InAs quantum dots A. Nauen,1, * I. Hapke-Wurst,1 F. Hohls,1 U. Zeitler Braunschweig, Germany Received 10 July 2002; published 4 October 2002 We investigate the noise properties-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias

  14. Enhanced quantum dot optical down-conversion using asymmetric 2D photonic crystals

    E-Print Network [OSTI]

    Cunningham, Brian

    -performance crosslinked colloidal quantum-dot light-emitting diodes," Nat. Photonics 3(6), 341­345 (2009). 10. D. Englund. Medvedev, M. Kazes, S. H. Kan, and U. Banin, "Efficient near-infrared polymer nanocrystal light- emitting diodes," Science 295(5559), 1506­1508 (2002). 8. V. Wood, M. J. Panzer, J. L. Chen, M. S. Bradley, J. E

  15. Lateral redistribution of excitons in CdSeZnSe quantum dots M. Strassburg,a)

    E-Print Network [OSTI]

    Nabben, Reinhard

    of quantum dot QD structures strongly depends on the growth conditions and the material system. Pronounced- neously QD ensemble we chose a system with well-known optical and structural properties.13­15 A single formed in a Stranski­Krastanow-like mode pro- vide for 3D confinement, i.e., QD states. Despite

  16. Cu2ZnSnS4 nanocrystals and graphene quantum dots for photovoltaics Xukai Xinab

    E-Print Network [OSTI]

    Lin, Zhiqun

    Cu2ZnSnS4 nanocrystals and graphene quantum dots for photovoltaics Jun Wang,a Xukai Xinab advances in the synthesis and utilization of CZTS nanocrystals and colloidal GQDs for photovoltaics emerged to achieve low cost, high perfor- mance photovoltaics, including organic solar cells,2­6 dye

  17. Tandem colloidal quantum dot solar cells employing a graded recombination layer

    E-Print Network [OSTI]

    Sargent, Edward H. "Ted"

    -based photodetectors1­5 and photovoltaic6­12 devices to be tailored. Multi-junction solar cells made from a combi- bandgap single-junction solar cells. In principle it also allows tandem and multi-junction cellsTandem colloidal quantum dot solar cells employing a graded recombination layer Xihua Wang1 , Ghada

  18. Excitonic enhancement of nonradiative energy transfer to bulk silicon with the hybridization of cascaded quantum dots

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Excitonic enhancement of nonradiative energy transfer to bulk silicon with the hybridization energy transfer to bulk silicon with the hybridization of cascaded quantum dots Aydan Yeltik,1 Burak sensitization of silicon through nonradiative energy transfer (NRET) of the excitons in an energy

  19. Color-tunable light emitting diodes based on quantum dot suspension

    E-Print Network [OSTI]

    Wu, Shin-Tson

    Color-tunable light emitting diodes based on quantum dot suspension Zhenyue Luo, Haiwei Chen, Yifan March 2015 We propose a color-tunable light emitting diode (LED) consisting of a blue LED as the light, rendering and metamerism; (230.3670) Light-emitting diodes. http://dx.doi.org/10.1364/AO.54.002845 1

  20. Synthesis and optical properties of cadmium selenide quantum dots for white light-emitting diode application

    SciTech Connect (OSTI)

    Xu, Xianmei; Wang, Yilin; Gule, Teri; Luo, Qiang [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Zhou, Liya, E-mail: zhouliyatf@163.com [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Gong, Fuzhong [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China)

    2013-03-15

    Highlights: ? Stable CdSe QDs were synthesized by the one-step and two-level process respectively. ? The fabricated white LEDs show good white balance. ? CdSe QDs present well green to yellow band luminescence. ? CdSe QDs displayed a broad excitation band. - Abstract: Yellow light-emitting cadmium selenide quantum dots were synthesized using one-step and two-step methods in an aqueous medium. The structural luminescent properties of these quantum dots were investigated. The obtained cadmium selenide quantum dots displayed a broad excitation band suitable for blue or near-ultraviolet light-emitting diode applications. White light-emitting diodes were fabricated by coating the cadmium selenide samples onto a 460 nm-emitting indium gallium nitrite chip. Both samples exhibited good white balance. Under a 20 mA working current, the white light-emitting diode fabricated via the one-step and two-step methods showed Commission Internationale de l’Éclairage coordinates at (0.27, 0.23) and (0.27, 0.33), respectively, and a color rendering index equal to 41 and 37, respectively. The one-step approach was simpler, greener, and more effective than the two-step approach. The one-step approach can be enhanced by combining cadmium selenide quantum dots with proper phosphors.

  1. Transport spectroscopy of disordered graphene quantum dots etched into a single graphene flake

    E-Print Network [OSTI]

    Zumbühl, Dominik

    Transport spectroscopy of disordered graphene quantum dots etched into a single graphene flake of sizes 45, 60 and 80 nm etched with an Ar/O2-plasma into a single graphene sheet, allowing a size comparison avoiding effects from different graphene flakes. The transport gaps and addition energies increase

  2. Whispering-Gallery Modes in Quantum Dot Embedded Microspheres for Sensing Applications 

    E-Print Network [OSTI]

    Beier, Hope T.

    2011-02-22

    that shift position with variations in the local index of refraction sampled by the evanescent tail of the WGMs. To excite these WGMs, we embed quantum dots (QDs) in the periphery of polystyrene microspheres to serve as local light sources. By coupling...

  3. Intermediate-band solar cells based on quantum dot supracrystals Q. Shao and A. A. Balandina

    E-Print Network [OSTI]

    parameter in the photovoltaic PV solar cell technology. It is defined as = FFVocJsc Pin , 1 where FFIntermediate-band solar cells based on quantum dot supracrystals Q. Shao and A. A. Balandina Nano to implement the intermediate-band solar cell with the efficiency exceeding the Shockley-Queisser limit

  4. Theoretical performance of solar cell based on mini-bands quantum dots

    SciTech Connect (OSTI)

    Aly, Abou El-Maaty M. E-mail: ashraf.nasr@gmail.com; Nasr, A. E-mail: ashraf.nasr@gmail.com

    2014-03-21

    The tremendous amount of research in solar energy is directed toward intermediate band solar cell for its advantages compared with the conventional solar cell. The latter has lower efficiency because the photons have lower energy than the bandgap energy and cannot excite mobile carriers from the valence band to the conduction band. On the other hand, if mini intermediate band is introduced between the valence and conduction bands, then the smaller energy photons can be used to promote charge carriers transfer to the conduction band and thereby the total current increases while maintaining a large open circuit voltage. In this article, the influence of the new band on the power conversion efficiency for structure of quantum dots intermediate band solar cell is theoretically investigated and studied. The time-independent Schrödinger equation is used to determine the optimum width and location of the intermediate band. Accordingly, achievement of a maximum efficiency by changing the width of quantum dots and barrier distances is studied. Theoretical determination of the power conversion efficiency under the two different ranges of QD width is presented. From the obtained results, the maximum power conversion efficiency is about 70.42%. It is carried out for simple cubic quantum dot crystal under fully concentrated light. It is strongly dependent on the width of quantum dots and barrier distances.

  5. Electric-field-controlled spin reversal in a quantum dot with ferromagnetic contacts

    E-Print Network [OSTI]

    Loss, Daniel

    realization of this tunnelling-induced spin splitting in a carbon-nanotube quantum dot coupled to ferromagnetic nickel electrodes with a strong tunnel coupling ensuring a sizeable exchange field. As charge and reversed merely by tuning the gate voltage. Since their discovery, carbon nanotubes (CNTs) have been

  6. Engineering the quantum point contact response to single-electron charging in a few-electron quantum-dot circuit

    E-Print Network [OSTI]

    -electron quantum-dot circuit L.-X. Zhang and J. P. Leburtona) Beckman Institute for Advanced Science & Technology Project, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands (Received 3 May =e2 /h (which is halfway between pinch off and the first con- ductance plateau G0=2e2 /h) gives

  7. Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells

    SciTech Connect (OSTI)

    Lu, Y. F.; Cao, X. A.

    2014-11-17

    CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique, and their optical properties were tuned by bandgap and strain engineering. 3-monolayer (ML) CdSe QWs emitted blue photoluminescence at 467?nm with a spectral full-width-at-half-maximum of ?30?nm. With a 3 ML ZnS cladding layer, which also acts as a passivating and strain-compensating layer, the QDQWs acquired a ?35% quantum yield of the QW emission. Blue and green electroluminescence (EL) was obtained from QDQW light-emitting devices with 3–4.5 ML CdSe QWs. It was found that as the peak blueshifted, the overall EL was increasingly dominated by defect state emission due to poor hole injection into the QDQWs. The weak EL was also attributed to strong field-induced charge separation resulting from the unique QDQW geometry, weakening the oscillator strength of optical transitions.

  8. Single InAs quantum dot coupled to different 'environments' in one wafer for quantum photonics

    SciTech Connect (OSTI)

    Yu, Ying; Shang, Xiang-Jun; Li, Mi-Feng; Zha, Guo-Wei; Xu, Jian-Xing; Wang, Li-Juan; Wang, Guo-Wei; Ni, Hai-Qiao; Dou, Xiuming; Sun, Baoquan; Niu, Zhi-Chuan

    2013-05-20

    Self assembled small InAs quantum dots (SQDs) were formed in various densities and environments using gradient InAs deposition on a non-rotating GaAs substrate. Two SQD environments (SQD I and SQD II) were characterized. SQD I featured SQDs surrounded by large QDs, and SQD II featured individual SQDs in the wetting layer (WL). Micro-photoluminescence of single QDs embedded in a cavity under various excitation powers and electric fields gave insight into carrier transport processes. Potential fluctuations of the WL in SQD II, induced by charge redistribution, show promise for charge-tunable QD devices; SQD I shows higher luminescence intensity as a single-photon source.

  9. Simulation of a broadband nano-biosensor based on an onion-like quantum dot-quantum well structure

    SciTech Connect (OSTI)

    Absalan, H; SalmanOgli, A; Rostami, R

    2013-07-31

    The fluorescence resonance energy transfer is studied between modified quantum-dots and quantum-wells used as a donor and an acceptor. Because of the unique properties of quantum dots, including diverse surface modification flexibility, bio-compatibility, high quantum yields and wide absorption, their use as nano-biosensors and bio-markers used in diagnosis of cancer is suggested. The fluorescence resonance energy transfer is simulated in a quantum dot-quantum well system, where the energy can flow from donor to acceptor. If the energy transfer can be either turned on or off by a specific interaction, such as interaction with any dyes, a molecular binding event or a cleavage reaction, a sensor can be designed (under assumption that the healthy cells have a known effect or unyielding effect on output parameters while cancerous cells, due to their pandemic optical properties, can impact the fluorescence resonance energy transfer parameters). The developed nano-biosensor can operate in a wide range of wavelengths (310 - 760 nm). (laser applications in biology and medicine)

  10. Supplementary Document CdSe quantum dot synthesis

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    dots is given as follows. Cadmium oxide, CdO (Acros Org.); oleic acid, OA (JT Baker); 1-octadecene, ODE. The cadmium stock solution has been prepared by mixing CdO, OA and ODE. The mixture is evacuated by raising-type (boron-doped) with a resistivity of 0.1-1 ·cm. The nanopillar diameter is defined by the nanosphere

  11. Toxicological studies of semiconductor quantum dots on immune cells.

    SciTech Connect (OSTI)

    Ricken, James Bryce; Rios, Lynette; Poschet, Jens Fredrich; Bachand, Marlene; Bachand, George David; Greene, Adrienne Celeste; Carroll-Portillo, Amanda

    2008-11-01

    Nanoengineered materials hold a vast promise of enabling revolutionary technologies, but also pose an emerging and potentially serious threat to human and environmental health. While there is increasing knowledge concerning the risks posed by engineered nanomaterials, significant inconsistencies exist within the current data based on the high degree of variability in the materials (e.g., synthesis method, coatings, etc) and biological test systems (e.g., cell lines, whole organism, etc). In this project, we evaluated the uptake and response of two immune cell lines (RAW macrophage and RBL mast cells) to nanocrystal quantum dots (Qdots) with different sizes and surface chemistries, and at different concentrations. The basic experimental design followed a 2 x 2 x 3 factorial model: two Qdot sizes (Qdot 520 and 620), two surface chemistries (amine 'NH{sub 2}' and carboxylic acid 'COOH'), and three concentrations (0, 1 nM, and 1 {micro}M). Based on this design, the following Qdots from Evident Technologies were used for all experiments: Qdot 520-COOH, Qdot 520-NH{sub 2}, Qdot 620-COOH, and Qdot 620-NH{sub 2}. Fluorescence and confocal imaging demonstrated that Qdot 620-COOH and Qdot 620-NH{sub 2} nanoparticles had a greater level of internalization and cell membrane association in RAW and RBL cells, respectively. From these data, a two-way interaction between Qdot size and concentration was observed in relation to the level of cellular uptake in RAW cells, and association with RBL cell membranes. Toxicity of both RBL and RAW cells was also significantly dependent on the interaction of Qdot size and concentration; the 1 {micro}M concentrations of the larger, Qdot 620 nanoparticles induced a greater toxic effect on both cell lines. The RBL data also demonstrate that Qdot exposure can induce significant toxicity independent of cellular uptake. A significant increase in TNF-{alpha} and decrease in IL-10 release was observed in RAW cells, and suggested that Qdot exposure induced a pro-inflammatory response. In contrast, significant decreases in both TNF-{alpha} and IL-4 releases were observed in RBL cells, which is indicative of a suppressed inflammatory response. The changes in cytokine release observed in RAW and RBL cells were primarily dependent on Qdot concentration and independent of size and surface chemistry. Changes in the activity of superoxide dismutase were observed in RAW, but not RBL cells, suggesting that RAW cells were experiencing oxidative stress induced by Qdot exposure. Overall, our results demonstrate that the uptake/association and biomolecular response of macrophage and mast cells is primarily driven by an interaction between Qdot size and concentration. Based on these findings, a more detailed understanding of how size directly impacts cellular interactions and response will be critical to developing predictive models of Qdot toxicity.

  12. Photo-induced conductance fluctuations in mesoscopic Ge/Si systems with quantum dots

    SciTech Connect (OSTI)

    Stepina, N. P.; Dvurechenskii, A. V.; Nikiforov, A. I.; Moers, J.; Gruetzmacher, D.

    2014-08-20

    We study the evolution of electron transport in strongly localized mesoscopic system with quantum dots under small photon flux. Exploring devices with narrow transport channels lead to the observation of giant fluctuations of the photoconductance, which is attributed to the strong dependence of hopping current on the filling of dots by holes. In our experiments, single-photon mode operation is indicated by the linear dependence of the frequency of photo-induced fluctuations on the light intensity and the step-like response of conductance on the pulse excitation. The effect of the light wavelength, measurement temperature, size of the conductive channel on the device efficiency are considered.

  13. Spontaneous emission control of single quantum dots by electromechanical tuning of a photonic crystal cavity

    E-Print Network [OSTI]

    Midolo, L; Hoang, T B; Xia, T; van Otten, F W M; Li, L H; Linfield, E; Lermer, M; Höfling, S; Fiore, A

    2012-01-01

    We demonstrate the control of the spontaneous emission rate of single InAs quantum dots embedded in a double-membrane photonic crystal cavity by the electromechanical tuning of the cavity resonance. Controlling the separation between the two membranes with an electrostatic field we obtain the real-time spectral alignment of the cavity mode to the excitonic line and we observe an enhancement of the spontaneous emission rate at resonance. The cavity has been tuned over 13 nm without shifting the exciton energies. A spontaneous emission enhancement of 4.5 has been achieved with a coupling efficiency of the dot to the mode 92%.

  14. Full counting statistics as a probe of quantum coherence in a side-coupled double quantum dot system

    SciTech Connect (OSTI)

    Xue, Hai-Bin

    2013-12-15

    We study theoretically the full counting statistics of electron transport through side-coupled double quantum dot (QD) based on an efficient particle-number-resolved master equation. It is demonstrated that the high-order cumulants of transport current are more sensitive to the quantum coherence than the average current, which can be used to probe the quantum coherence of the considered double QD system. Especially, quantum coherence plays a crucial role in determining whether the super-Poissonian noise occurs in the weak inter-dot hopping coupling regime depending on the corresponding QD-lead coupling, and the corresponding values of super-Poissonian noise can be relatively enhanced when considering the spins of conduction electrons. Moreover, this super-Poissonian noise bias range depends on the singly-occupied eigenstates of the system, which thus suggests a tunable super-Poissonian noise device. The occurrence-mechanism of super-Poissonian noise can be understood in terms of the interplay of quantum coherence and effective competition between fast-and-slow transport channels. -- Highlights: •The FCS can be used to probe the quantum coherence of side-coupled double QD system. •Probing quantum coherence using FCS may permit experimental tests in the near future. •The current noise characteristics depend on the quantum coherence of this QD system. •The super-Poissonian noise can be enhanced when considering conduction electron spin. •The side-coupled double QD system suggests a tunable super-Poissonian noise device.

  15. Non-adiabatic quantum pumping by a randomly moving quantum dot

    E-Print Network [OSTI]

    Stanislav Derevyanko; Daniel Waltner

    2015-06-22

    We look at the time dependent fluctuations of the electrical charge in an open 1D quantum system represented by a quantum dot experiencing random lateral motion. In essentially non-adiabatic settings we study both diffusive and ballistic (Levy) regimes of the barrier motion where the electric current as well as the net pumped electric charge experience random fluctuations over the static background. We show that in the large-time limit, $t \\to \\infty$, the wavefunction is naturally separated into the Berry-phase component (resulting from the singular part of the wave amplitude in the co-moving frame) and the non-adiabatic correction (arising from fast oscillating, slow decaying tails of the same amplitude). Based on this separation we report two key results: Firstly, the disorder averaged wave function and current are asymptotically mainly determined by the same Berry phase contribution that applies in the case of adiabatic motion. Secondly, after a short transition period the pumped electric charge exhibits fluctuations that grow much faster than predicted by the adiabatic theory. We also derive the exact expressions for the average propagator (in the co-moving basis representation) for the diffusive and ballistic types of motion considered.

  16. Single-photon nonlinear optics with a quantum dot in a waveguide

    E-Print Network [OSTI]

    Javadi, A; Arcari, M; Hansen, S L; Midolo, L; Mahmoodian, S; Kiršansk?, G; Pregnolato, T; Lee, E H; Song, J D; Stobbe, S; Lodahl, P

    2015-01-01

    Strong nonlinear interactions between photons enable logic operations for both classical and quantum-information technology. Unfortunately, nonlinear interactions are usually feeble and therefore all-optical logic gates tend to be inefficient. A quantum emitter deterministically coupled to a propagating mode fundamentally changes the situation, since each photon inevitably interacts with the emitter, and highly correlated many-photon states may be created . Here we show that a single quantum dot in a photonic-crystal waveguide can be utilized as a giant nonlinearity sensitive at the single-photon level. The nonlinear response is revealed from the intensity and quantum statistics of the scattered photons, and contains contributions from an entangled photon-photon bound state. The quantum nonlinearity will find immediate applications for deterministic Bell-state measurements and single-photon transistors and paves the way to scalable waveguide-based photonic quantum-computing architectures.

  17. Single-photon nonlinear optics with a quantum dot in a waveguide

    E-Print Network [OSTI]

    A. Javadi; I. Söllner; M. Arcari; S. L. Hansen; L. Midolo; S. Mahmoodian; G. Kiršansk?; T. Pregnolato; E. H. Lee; J. D. Song; S. Stobbe; P. Lodahl

    2015-04-26

    Strong nonlinear interactions between photons enable logic operations for both classical and quantum-information technology. Unfortunately, nonlinear interactions are usually feeble and therefore all-optical logic gates tend to be inefficient. A quantum emitter deterministically coupled to a propagating mode fundamentally changes the situation, since each photon inevitably interacts with the emitter, and highly correlated many-photon states may be created . Here we show that a single quantum dot in a photonic-crystal waveguide can be utilized as a giant nonlinearity sensitive at the single-photon level. The nonlinear response is revealed from the intensity and quantum statistics of the scattered photons, and contains contributions from an entangled photon-photon bound state. The quantum nonlinearity will find immediate applications for deterministic Bell-state measurements and single-photon transistors and paves the way to scalable waveguide-based photonic quantum-computing architectures.

  18. Probing the structural dependency of photoinduced properties of colloidal quantum dots using metal-oxide photo-active substrates

    SciTech Connect (OSTI)

    Patty, Kira; Campbell, Quinn; Hamilton, Nathan; West, Robert G.; Sadeghi, Seyed M.; Mao, Chuanbin

    2014-09-21

    We used photoactive substrates consisting of about 1 nm coating of a metal oxide on glass substrates to investigate the impact of the structures of colloidal quantum dots on their photophysical and photochemical properties. We showed during irradiation these substrates can interact uniquely with such quantum dots, inducing distinct forms of photo-induced processes when they have different cores, shells, or ligands. In particular, our results showed that for certain types of core-shell quantum dot structures an ultrathin layer of a metal oxide can reduce suppression of quantum efficiency of the quantum dots happening when they undergo extensive photo-oxidation. This suggests the possibility of shrinking the sizes of quantum dots without significant enhancement of their non-radiative decay rates. We show that such quantum dots are not influenced significantly by Coulomb blockade or photoionization, while those without a shell can undergo a large amount of photo-induced fluorescence enhancement via such blockade when they are in touch with the metal oxide.

  19. Quantum Dot Targeting with Lipoic Acid Ligase and HaloTag for Single-Molecule Imaging on Living Cells

    E-Print Network [OSTI]

    Liu, Daniel S.

    We present a methodology for targeting quantum dots to specific proteins on living cells in two steps. In the first step, Escherichia coli lipoic acid ligase (LplA) site-specifically attaches 10-bromodecanoic acid onto a ...

  20. Selective turn-on fluorescence detection of cyanide in water using hydrophobic CdSe quantum dots 

    E-Print Network [OSTI]

    Dryden D.T.F.; Mareque-Rivas J.C.; Galve-Gasion J.A.; Stevenson E.I.; Touceda-Varela A.

    2008-05-01

    The ability of 2,2'-bipyridine-bound copper(II) ions to quench the photoluminescence of hydrophobic CdSe quantum dots is used to create a novel, selective turn-on fluorescence cyanide sensor.

  1. Self-interaction-free density-functional theoretical study of the electronic structure of spherical and vertical quantum dots

    E-Print Network [OSTI]

    Jiang, T. F.; Tong, Xiao-Min; Chu, Shih-I

    2001-01-09

    We study the electronic structure and shell-filling effects of both spherical and vertical quantum dots by means of the density functional theory (DFT) with optimized effective potential (OEP) and self-interaction-correction (SIC) recently developed...

  2. Optical studies of colloidal quantum dots : optical trapping with plasmonic nanoapertures and thermal recovery from photoinduced dimming

    E-Print Network [OSTI]

    Jensen, Russell Andrew

    2015-01-01

    This doctoral research has been defined by two main goals. The first has been to develop single colloidal quantum dot (QD) absorption as a new spectroscopic tool for investigating single QD electronic properties, dynamics, ...

  3. Layer-by-layer surface manipulation and biointegration of quantum dots : assembly of nanostructured DNA delivery vehicles

    E-Print Network [OSTI]

    Jaffar, Saeeda Mahdi

    2005-01-01

    Objectives: The aims of this investigation are to (i) prepare hybrid quantum dot (QD)-polymer compleses, (ii) maniplulate structural and chemical properties of the hybrids and characterize their effects on biocompatibility, ...

  4. Microsphere Light-Scattering Layer Assembled by ZnO Nanosheets for the Construction of High Efficiency (>5%) Quantum Dots

    E-Print Network [OSTI]

    Cao, Guozhong

    for CdS/CdSe quantum dot cosensitized solar cells (QDSCs) with a power conversion efficiency (PCE Efficiency (>5%) Quantum Dots Sensitized Solar Cells Jianjun Tian,*, Lili Lv, Xuyang Wang, Chengbin Fei. As a result, the solar cell displayed Jsc of 17.13 mA/cm2 , Voc of 0.56 V, FF of 0.53, and PCE of 5.08%, one

  5. The operation principle of the well in quantum dot stack infrared photodetector

    SciTech Connect (OSTI)

    Lee, Jheng-Han; Wu, Zong-Ming [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liao, Yu-Min; Wu, Yuh-Renn [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Lin, Shih-Yen [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Taipei 115299, Taiwan (China); Lee, Si-Chen, E-mail: sclee@cc.ee.ntu.edu.tw [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China)

    2013-12-28

    The well in the quantum dot stack infrared photodetector (WD-QDIP) is proposed which can be operated at high temperature ?230?K. The operation principle of this device is investigated, including the carrier transport and the enhancement in the photocurrent. The WD-QDIPs with different well numbers are fabricated to study the mechanisms. It is realized that the carrier transport from the emitter to the collector in traditional quantum dot infrared photodetectors consists of two channels deduced from current-voltage characteristics and dark current activation energy at different temperatures. At temperatures below 77?K, the current transports through the InAs quantum dot channel, whereas at temperatures higher than 77?K, the current is dominated by the GaAs leakage channel. In addition, the non-equilibrium situation at low temperatures is also observed owing to the presence of photovoltaic phenomenon. The carrier distribution inside the QDs is simulated to investigate the reasons for the increase of photocurrent. Based on the simulation and the photocurrent response, the hot carrier (electron) scattering effect by the insertion of a quantum well layer is inferred as the most probable reason that lead to the enhancement of the response and regarded as the key factor to achieve high- temperature operation.

  6. Longitudinal wave function control in single quantum dots with an applied magnetic field

    E-Print Network [OSTI]

    Cao, Shuo; Gao, Yunan; Sun, Yue; Qiu, Kangsheng; Zhao, Yanhui; He, Min; Shi, Jin-An; Gu, Lin; Williams, David A; Sheng, Weidong; Jin, Kuijuan; Xu, Xiulai

    2015-01-01

    Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted...

  7. Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures

    SciTech Connect (OSTI)

    Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M., E-mail: zmjiang@fudan.edu.cn [State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433 (China); Chen, D. D.; Xu, F. [SHU-SolarE R and D Lab, Department of Physics, College of Science, Shanghai University, Shanghai 200444 (China)

    2014-07-14

    Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488?nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325?nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

  8. Group-V intermixing in InAs/InP quantum dots

    SciTech Connect (OSTI)

    Chia, C.K.; Chua, S.J.; Tripathy, S.; Dong, J.R.

    2005-01-31

    Postgrowth intermixing in InAs/InP quantum dot (QD) structures have been investigated by rapid thermal annealing and laser irradiation techniques. In both cases, room-temperature photoluminescence (PL) measured from the QD structures after intermixing shows a substantial blueshift accompanied by an improvement in PL intensity and a reduction in linewidth. In the case of impurity free vacancy disordering, an energy shift of up to 350 meV has been achieved. The maximum differential energy shift for samples capped with SiO{sub 2} and SiN{sub x} dielectrics was found to be 90 meV. On the other hand, laser-induced intermixing allows differential energy shifts of more than 250 meV in this material system. Micro-Raman measurement shows the appearance of InAs-type and InP-type optical phonon peaks from laser-annealed InAs/InP QDs due to the exchange of As and P at the QD interfaces.

  9. Chains of quantum dot molecules grown on Si surface pre-patterned by ion-assisted nanoimprint lithography

    SciTech Connect (OSTI)

    Smagina, Zh. V.; Stepina, N. P., E-mail: stepina@isp.nsc.ru; Zinovyev, V. A.; Kuchinskaya, P. A. [Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrenteva 13, 630090 Novosibirsk (Russian Federation); Novikov, P. L.; Dvurechenskii, A. V. [Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrenteva 13, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, Pirogova, 2, 630090 Novosibirsk (Russian Federation)

    2014-10-13

    An original approach based on the combination of nanoimprint lithography and ion irradiation through mask has been developed for fabrication of large-area periodical pattern on Si(100). Using the selective etching of regions amorphized by ion irradiation ordered structures with grooves and ridges were obtained. The shape and depth of the relief were governed by ion energy and by the number of etching stages as well. Laterally ordered chains of Ge quantum dots were fabricated by molecular beam epitaxy of Ge on the pre-patterned Si substrates. For small amount of Ge deposited chains contain separate quantum dot molecules. The increase of deposition amount leads to overlapping of quantum dot molecules with formation of dense homogeneous chains of quantum dots. It was shown that the residual irradiation-induced bulk defects underneath the grooves suppress nucleation of Ge islands at the bottom of grooves. On pre-patterned substrates with whole defect regions, etched quantum dots grow at the bottom of grooves. The observed location of Ge quantum dots is interpreted in terms of local strain-mediated surface chemical potential which controls the sites of islands nucleation. The local chemical potential is affected by additional strain formed by the residual defects. It was shown by molecular dynamics calculations that these defects form the compressive strain at the bottom of grooves.

  10. Quantum dot nonlinearity through cavity-enhanced feedback with a charge memory

    E-Print Network [OSTI]

    Morten P. Bakker; Thomas Ruytenberg; Wolfgang Loffler; Ajit V. Barve; Larry Coldren; Martin P. van Exter; Dirk Bouwmeester

    2015-03-27

    In an oxide apertured quantum dot (QD) micropillar cavity-QED system, we found strong QD hysteresis effects and lineshape modifications even at very low intensities corresponding to less than 0.001 intracavity photons. We attribute this to the excitation of charges by the intracavity field; charges that get trapped at the oxide aperture, where they screen the internal electric field and blueshift the QD transition. This in turn strongly modulates light absorption by cavity QED effects, eventually leading to the observed hysteresis and lineshape modifications. The cavity also enables us to observe the QD dynamics in real time, and all experimental data agrees well with a power-law charging model. This effect can serve as a novel tuning mechanism for quantum dots.

  11. All-electrical single-electron shuttle in a silicon quantum dot

    E-Print Network [OSTI]

    Chan, K W; Kemppinen, A; Lai, N S; Tan, K Y; Lim, W H; Dzurak, A S

    2011-01-01

    We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source and to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency fp. Current plateaus at integer levels of efp are observed up to fp = 240 MHz operation frequencies. The observed results are explained by a sequential tunneling model which suggests that the electron gas may be heated substantially by the ac driving voltage.

  12. Decision making based on optical excitation transfer via near-field interactions between quantum dots

    SciTech Connect (OSTI)

    Naruse, Makoto, E-mail: naruse@nict.go.jp [Photonic Network Research Institute, National Institute of Information and Communications Technology, 4-2-1 Nukui-kita, Koganei, Tokyo 184-8795 (Japan); Nomura, Wataru; Ohtsu, Motoichi [Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); Aono, Masashi [Earth-Life Science Institute, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguru-ku, Tokyo 152-8550 (Japan); PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi-shi, Saitama 332-0012 (Japan); Sonnefraud, Yannick; Drezet, Aurélien; Huant, Serge [Université Grenoble Alpes, Inst. NEEL, F-38000 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Kim, Song-Ju [WPI Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-10-21

    Optical near-field interactions between nanostructured matters, such as quantum dots, result in unidirectional optical excitation transfer when energy dissipation is induced. This results in versatile spatiotemporal dynamics of the optical excitation, which can be controlled by engineering the dissipation processes and exploited to realize intelligent capabilities such as solution searching and decision making. Here, we experimentally demonstrate the ability to solve a decision making problem on the basis of optical excitation transfer via near-field interactions by using colloidal quantum dots of different sizes, formed on a geometry-controlled substrate. We characterize the energy transfer behavior due to multiple control light patterns and experimentally demonstrate the ability to solve the multi-armed bandit problem. Our work makes a decisive step towards the practical design of nanophotonic systems capable of efficient decision making, one of the most important intellectual attributes of the human brain.

  13. Controlling circular polarization of light emitted by quantum dots using chiral photonic crystal slab

    E-Print Network [OSTI]

    Lobanov, S V; Gippius, N A; Maksimov, A A; Filatov, E V; Tartakovskii, I I; Kulakovskii, V D; Weiss, T; Schneider, C; Geßler, J; Kamp, M; Höfling, S

    2015-01-01

    Polarization properties of the emission have been investigated for quantum dots embedded in chiral photonic crystal structures made of achiral planar GaAs waveguides. A modification of the electromagnetic mode structure due to the chiral grating fabricated by partial etching of the waveguide layer has been shown to result in a high circular polarization degree $\\rho_c$ of the quantum dot emission in the absence of external magnetic field. The physical nature of the phenomenon can be understood in terms of the reciprocity principle taking into account the structural symmetry. At the resonance wavelength, the magnitude of $|\\rho_c|$ is predicted to exceed 98%. The experimentally achieved value of $|\\rho_c|=81$% is smaller, which is due to the contribution of unpolarized light scattered by grating defects, thus breaking its periodicity. The achieved polarization degree estimated removing the unpolarized nonresonant background from the emission spectra can be estimated to be as high as 96%, close to the theoretic...

  14. Inverted Singlet-Triplet Qubit Coded on a Two-Electron Double Quantum Dot

    E-Print Network [OSTI]

    Sebastian Mehl; David P. DiVincenzo

    2014-11-26

    The $s_z=0$ spin configuration of two electrons confined at a double quantum dot (DQD) encodes the singlet-triplet qubit (STQ). We introduce the inverted STQ (ISTQ) that emerges from the setup of two quantum dots (QDs) differing significantly in size and out-of-plane magnetic fields. The strongly confined QD has a two-electron singlet ground state, but the weakly confined QD has a two-electron triplet ground state in the $s_z=0$ subspace. Spin-orbit interactions act nontrivially on the $s_z=0$ subspace and provide universal control of the ISTQ together with electrostatic manipulations of the charge configuration. GaAs and InAs DQDs can be operated as ISTQs under realistic noise conditions.

  15. Tuning photoluminescence of reduced graphene oxide quantum dots from blue to purple

    SciTech Connect (OSTI)

    Liu, Fuchi; Tang, Tao; Feng, Qian; Li, Ming; Liu, Yuan; Tang, Nujiang Zhong, Wei; Du, Youwei

    2014-04-28

    Reduced graphene oxide quantum dots (rGOQDs) were synthesized by annealing GOQDs in H{sub 2} atmosphere. The photoluminescence (PL) properties of GOQDs and the rGOQDs samples were investigated. The results showed that compared to GOQDs, a blue to purple tunable PL of rGOQDs can be obtained by regulating the annealing temperature. The increase fraction of the newly formed isolated sp{sup 2} clusters may be responsible for the observed tunable PL.

  16. Fluctuation Phenomena in Chaotic Dirac Quantum Dots: Artificial Atoms on Graphene Flakes

    E-Print Network [OSTI]

    J. G. G. S. Ramos; M. S. Hussein; A. L. R. Barbosa

    2015-10-02

    We develop the stub model for the Dirac Quantum Dot, an electron confining device on a grapheme surface. Analytical results for the average conductance and the correlation functions are obtained and found in agreement with those found previously using semiclassical calculation. Comparison with available data are presented. The results reported here demonstrate the applicability of Random Matrix Theory in the case of Dirac electrons confined in a stadium.

  17. Fluctuation Phenomena in Chaotic Dirac Quantum Dots: Artificial Atoms on Graphene Flakes

    E-Print Network [OSTI]

    Ramos, J G G S; Barbosa, A L R

    2015-01-01

    We develop the stub model for the Dirac Quantum Dot, an electron confining device on a grapheme surface. Analytical results for the average conductance and the correlation functions are obtained and found in agreement with those found previously using semiclassical calculation. Comparison with available data are presented. The results reported here demonstrate the applicability of Random Matrix Theory in the case of Dirac electrons confined in a stadium.

  18. Enhancement of photoluminescence in ZnS/ZnO quantum dots interfacial heterostructures

    SciTech Connect (OSTI)

    Rajalakshmi, M.; Sohila, S.; Ramesh, R.; Bhalerao, G.M.

    2012-09-15

    Highlights: ? ZnS/ZnO quantum dots (QDs) were synthesized by controlled oxidation of ZnS nanoparticles. ? Interfacial heterostructure formation of ZnS/ZnO QDs is seen in HRTEM. ? Enormous enhancement of UV emission (?10 times) in ZnS/ZnO QDs heterostructure is observed. ? Phonon confinement effect is seen in the Raman spectrum. -- Abstract: ZnS/ZnO quantum dots (QDs) were synthesized by controlled oxidation of ZnS nanoparticles. HRTEM image showed small nanocrystals of size 4 nm and the magnified image of single quantum dot shows interfacial heterostructure formation. The optical absorption spectrum shows a blue shift of 0.19 and 0.23 eV for ZnO and ZnS QDs, respectively. This is due to the confinement of charge carries within the nanostructures. Enormous enhancement in UV emission (10 times) is reported which is attributed to interfacial heterostructure formation. Raman spectrum shows phonons of wurtzite ZnS and ZnO. Phonon confinement effect is seen in the Raman spectrum wherein LO phonon peaks of ZnS and ZnO are shifted towards lower wavenumber side and are broadened.

  19. Spectral properties of a hybrid-qubit model based on a two-dimensional quantum dot

    E-Print Network [OSTI]

    Alba Y. Ramos; Omar Osenda

    2015-03-27

    The design and study of hybrid qubits is driven by their ability to get along the best of charge qubits and of spin qubits, {\\em i.e.} the speed of operation of the former and the very slow decoherence rates of the latter ones. There are several proposals to implement hybrid qubits, this works focuses on the spectral properties of an one-electron hybrid qubit. By design, the information would be stored in the electronic spin and the switching between the qubit basis states would be achieved using an external ac electric field. The electron is confined in a two-dimensional quantum dot, whose confining potential is given by a quartic potential, features that are typical of GaAS quantum dots. Besides the confining potential that characterizes the quantum dot there are two static magnetic fields applied to the system, one is a large constant Zeeman field and the other one has a constant gradient. We study the spectral properties of the model Hamiltonian, a Scr\\"odinger-Pauli Hamiltonian with realistic parameters, using the Ritz method. In particular, we look for regions of the parameter space where the lowest eigenenergies and their eigenfunctions allow to define a qubit which is stable under perturbations to the design parameters. We put special attention to the constraints that the design imposes over the magnetic fields, the tuning of the energy gap between the qubit states and the expectation value of the spin operator where the information would be stored.

  20. Ab Initio Simulation of Charge Transfer at the Semiconductor Quantum Dot/TiO 2 Interface in Quantum Dot-Sensitized Solar Cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xin, Xukai; Li, Bo; Jung, Jaehan; Yoon, Young Jun; Biswas, Rana; Lin, Zhiqun

    2014-07-24

    Quantum dot-sensitized solar cells (QDSSCs) have emerged as a promising solar architecture for next-generation solar cells. The QDSSCs exhibit a remarkably fast electron transfer from the quantum dot (QD) donor to the TiO2 acceptor with size quantization properties of QDs that allows for the modulation of band energies to control photoresponse and photoconversion efficiency of solar cells. In order to understand the mechanisms that underpin this rapid charge transfer, the electronic properties of CdSe and PbSe QDs with different sizes on the TiO2 substrate are simulated using a rigorous ab initio density functional method. Our method capitalizes on localized orbitalmore »basis set, which is computationally less intensive. Quite intriguingly, a remarkable set of electron bridging states between QDs and TiO2 occurring via the strong bonding between the conduction bands of QDs and TiO2 is revealed. Such bridging states account for the fast adiabatic charge transfer from the QD donor to the TiO2 acceptor, and may be a general feature for strongly coupled donor/acceptor systems. All the QDs/TiO2 systems exhibit type II band alignments, with conduction band offsets that increase with the decrease in QD size. This facilitates the charge transfer from QDs donors to TiO2 acceptors and explains the dependence of the increased charge transfer rate with the decreased QD size.« less

  1. Temperature-Dependent Electron Transport in Quantum Dot Photovoltaics

    E-Print Network [OSTI]

    Padilla, Derek

    2013-01-01

    semiconductor clusters: materials syn- thesis, quantum size effects, and photophysical properties.Semiconductor Properties 2.1 Electronic Bands in Bulk Materials . . . . . . . . . . .of material thermal properties. Chapter 3 Semiconductor

  2. Microchemical systems for the synthesis of nanostructures : quantum dots

    E-Print Network [OSTI]

    Baek, Jinyoung

    2012-01-01

    We have developed a continuous multi-stage high-temperature and high-pressure microfluidic system. High-pressure conditions enabled the use low molecular weight solvents that have previously not been available for quantum ...

  3. Sandia Energy - Sandia Develops a Synthesis of Quantum Dots that...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    that Increases the Quantum Yield to 95.5% White light-emitting diodes (LEDs) based on blue indium-gallium-nitride (InGaN) LEDs that excite yellow-green-emitting...

  4. Showcasing the research of quantum dot sensitized solar cells from Prof. J.J.Tian's and Prof. G.Z.Cao's lab,

    E-Print Network [OSTI]

    Cao, Guozhong

    O2 nanosheets (NSs) was investigated for CdS/CdSe quantum dot co-sensitized solar cells. ZnO NRs States. Title: ZnO/TiO2 nanocable structured photoelectrodes for CdS/CdSe quantum dot co-sensitized solarShowcasing the research of quantum dot sensitized solar cells from Prof. J.J.Tian's and Prof. G

  5. InAs/InGaAsP Quantum Dots Emitting at 1.5 m for Applications in E.S. Semenova1,*

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    As quantum dots (QDs) in an InGaAsP matrix on an InP wafer is described. A new approach to shift the emissionInAs/InGaAsP Quantum Dots Emitting at 1.5 µµµµm for Applications in Lasers E.S. Semenova1,* , I and associated carrier dynamic properties [1] of quantum dots (QDs) make them highly interesting for ultrafast

  6. Investigating the chemical and morphological evolution of GaAs capped InAs/InP quantum dots emitting at 1.5 mm using aberration-corrected

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    s t r a c t The emission wavelength of InAs quantum dots grown on InP has been shown to shiftInvestigating the chemical and morphological evolution of GaAs capped InAs/InP quantum dots microscopy A3. Metalorganic vapour-phase epitaxy A3. Quantum dots B2. Semiconducting III/V materials a b

  7. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode

    SciTech Connect (OSTI)

    Mehta, M.; Michaelis de Vasconcellos, S.; Zrenner, A.; Meier, C. [Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), University of Paderborn, Warburger Street 100, 33098 Paderborn (Germany); Reuter, D.; Wieck, A. D. [Applied Solid State Physics, Ruhr-University of Bochum, Universitaetsstr. 150, 44780 Bochum (Germany)

    2010-10-04

    We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski-Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.

  8. Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices

    SciTech Connect (OSTI)

    Peleshchak, R. M.; Guba, S. K.; Kuzyk, O. V.; Kurilo, I. V.; Dankiv, O. O.

    2013-03-15

    The distribution of hydrostatic strains in Bi{sup 3+}-doped InAs quantum dots embedded in a GaAs matrix are calculated in the context of the deformation-potential model. The dependences of strains in the material of spherical InAs quantum dots with substitutional (Bi {yields} As) and interstitial (Bi) impurities on the quantum-dot size are derived. The qualitative correlation of the model with the experiment is discussed. The data on the effect of doping on the morphology of self-assembled InAs:Bi quantum dots in a GaAs matrix are obtained.

  9. Quantum dynamics of two quantum dots coupled through localized plasmons: An intuitive and accurate quantum optics approach using quasinormal modes

    E-Print Network [OSTI]

    Rong-Chun Ge; Stephen Hughes

    2015-11-17

    We study the quantum dynamics of two quantum dots (QDs) or artificial atoms coupled through the fundamental localized plasmon of a gold nanorod resonator. We derive an intuitive and efficient time-local master equation, in which the effect of the metal nanorod is taken into consideration self-consistently using a quasinormal mode (QNM) expansion technique of the photon Green function. Our efficient QNM technique offers an alternative and more powerful approach over the standard Jaynes-Cummings model, where the radiative decay, nonradiative decay, and spectral reshaping effect of the electromagnetic environment is rigorously included in a clear and transparent way. We also show how one can use our approach to compliment the approximate Jaynes-Cummings model in certain spatial regimes where it is deemed to be valid. We then present a study of the quantum dynamics and photoluminescence spectra of the two plasmon-coupled QDs. We first explore the non-Markovian regime, which is found to be important only on the ultrashort time scale of the plasmon mode which is about 40$\\,$fs. For the field free evolution case of excited QDs near the nanorod, we demonstrate how spatially separated QDs can be effectively coupled through the plasmon resonance and we show how frequencies away from the plasmon resonance can be more effective for coherently coupling the QDs. Despite the strong inherent dissipation of gold nanoresonators, we show that qubit entanglements as large as 0.7 can be achieved from an initially separate state, which has been limited to less than 0.5 in previous work for weakly coupled reservoirs. We also study the superradiance and subradiance decay dynamics of the QD pair. Finally, we investigate the rich quantum dynamics of QDs that are incoherently pumped, ...

  10. Atomic and Molecular Quantum Theory Course Number: C561 C A Measurement is a Projection or a "dot" product (or inner

    E-Print Network [OSTI]

    Iyengar, Srinivasan S.

    of obtaining these measurements is basically a dot product. The dot product can also be interpreted as a proAtomic and Molecular Quantum Theory Course Number: C561 C A Measurement is a Projection or a "dot" product (or inner product)!! 1. Lets go back and consider the Stern Gerlach experiment that we studied

  11. Effects of linear and nonlinear piezoelectricity on the electronic properties of InAs/GaAs quantum dots

    E-Print Network [OSTI]

    Vanderbilt, David

    Effects of linear and nonlinear piezoelectricity on the electronic properties of InAs/GaAs quantum linear piezoelectric ef- fect into account and demonstrating important electronic consequences of the piezoelectric effect on electronic and optical properties of quantum dots and find that the quadratic and linear

  12. Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers

    SciTech Connect (OSTI)

    Karni, O. Mikhelashvili, V.; Eisenstein, G.; Kuchar, K. J.; Capua, A.; S?k, G.; Misiewicz, J.; Ivanov, V.; Reithmaier, J. P.

    2014-03-24

    We report on a characterization of fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Multi-wavelength pump-probe measurements were used to determine gain recovery rates, following a powerful optical pump pulse, at various wavelengths for different bias levels and pump excitation powers. The recovery was dominated by coupling between the electronic states in the quantum-dots and the high energy carrier reservoir via capture and escape mechanisms. These processes determine also the wavelength dependencies of gain saturation depth and the asymptotic gain recovery level. Unlike quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their quasi zero-dimensional nature.

  13. Near-Infrared Localized Surface Plasmon Resonances Arising from Free Carriers in Doped Quantum Dots

    SciTech Connect (OSTI)

    Jain, Prashant K.; Luther, Joey; Ewers, Trevor; Alivisatos, A. Paul

    2010-10-12

    Quantum confinement of electronic wavefunctions in semiconductor quantum dots (QDs) yields discrete atom-like and tunable electronic levels, thereby allowing the engineering of excitation and emission spectra. Metal nanoparticles, on the other hand, display strong resonant interactions with light from localized surface plasmon resonance (LSPR) oscillations of free carriers, resulting in enhanced and geometrically tunable absorption and scattering resonances. The complementary attributes of these nanostructures lends strong interest toward integration into hybrid nanostructures to explore enhanced properties or the emergence of unique attributes arising from their interaction. However, the physicochemical interface between the two components can be limiting for energy transfer and synergistic coupling within such a hybrid nanostructure. Therefore, it is advantageous to realize both attributes, i.e., LSPRs and quantum confinement within the same nanostructure. Here, we describe well-defined LSPRs arising from p-type carriers in vacancy-doped semiconductor quantum dots. This opens up possibilities for light harvesting, non-linear optics, optical sensing and manipulation of solid-state processes in single nanocrystals.

  14. Exciton fine-structure splitting of telecom wavelength single quantum dots: statistics and external strain tuning

    E-Print Network [OSTI]

    Luca Sapienza; Ralph N. E. Malein; Christopher E. Kuklewicz; Peter E. Kremer; Kartik Srinivasan; Andrew Griffiths; Edmund Clarke; Ming Gong; Richard J. Warburton; Brian D. Gerardot

    2013-09-18

    In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1\\mu m eV are measured and manipulated. We observe varied response of the splitting to the external strain, including positive and negative tuning slopes, different tuning ranges, and linear and parabolic dependencies, indicating that these physical parameters depend strongly on the unique microscopic structure of the individual quantum dot. To better understand the experimental results, we apply a phenomenological model describing the exciton polarization and fine-structure splitting under uniaxial strain. The model predicts that, with an increased experimental strain tuning range, the fine-structure can be effectively canceled for select telecom wavelength dots using uniaxial strain. These results are promising for the generation of on-demand entangled photon pairs at telecom wavelengths.

  15. Nonlinear Michelson interferometer for improved quantum metrology

    E-Print Network [OSTI]

    Alfredo Luis; Ángel Rivas

    2015-04-21

    We examine nonlinear quantum detection via a Michelson interferometer embedded in a gas with Kerr nonlinearity. The interferometer is illuminated by pulses of classical light. This strategy combines the robustness against practical imperfections of classical light with the improvement provided by nonlinear detection. Regarding ultimate quantum limits, we stress that, as a difference with linear schemes, the nonlinearity introduces pulse duration as a new variable into play along with the energy resources.

  16. Improvements in communication complexity using quantum entanglement 

    E-Print Network [OSTI]

    Kamat, Angad Mohandas

    2008-10-10

    Entanglement. (August 2008) Angad Mohandas Kamat, B. Tech., National Institute of Technology, Warangal, India Chair of Advisory Committee: Dr. Andreas Klappenecker Quantum computing resources have been known to provide speed-ups in com- putational complexity...: Chair of Committee, Andreas Klappenecker Committee Members, Jennifer L. Welch Alexander Sprintson Head of Department, Valerie E. Taylor August 2008 Major Subject: Computer Science iii ABSTRACT Improvements in Communication Complexity Using Quantum...

  17. Indium tin oxide (ITO) was used as a hole conductor for quantum dot sensitized solar cells (QDSSC) and optimization of the deposition of ITO was investigated. To determine optimal voltage for electrochemically assisted deposition (EAD) of ITO, linear swee

    E-Print Network [OSTI]

    Abstract Indium tin oxide (ITO) was used as a hole conductor for quantum dot sensitized solar cells sensitized solar cells - Quantum dot sensitized solar cells could be much less costly than traditional solar

  18. Violation of Bell's inequality with a quantum dot in a tapered nanowire waveguide

    E-Print Network [OSTI]

    Klaus D. Jöns; Lucas Schweickert; Marijn A. M. Versteegh; Dan Dalacu; Philip J. Poole; Angelo Gulinatti; Andrea Giudice; Val Zwiller; Michael E. Reimer

    2015-10-13

    We present a bright and directional polarization-entangled photon-pair source generated by a photonic nanostructure that violates Bell's inequality. The solid-state quantum light source is an InAsP quantum dot in a tapered InP nanowire waveguide. Utilizing quasi-resonant excitation at the wurtzite InP nanowire resonance reduces multi-photon emission resulting in an entanglement fidelity of $F=0.835\\,\\pm\\,0.004$ without temporal post-selection. The performed Bell test using the Clauser-Horne-Shimony-Holt inequality reveals clear violation ($S_{\\text{CHSH}}>2$) of the local hidden variable theory by 3.5 standard deviations and highlights the possible application in source-independent quantum key distribution.

  19. Sandia Energy - Research Challenge 2: Quantum Dots and Phosphors

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory ofDid youOxygenLaboratory Fellows JerryPredictive SimulationQuantum1:2:

  20. Strong Electromechanical Coupling of an Atomic Force Microscope Cantilever to a Quantum Dot Steven D. Bennett, Lynda Cockins, Yoichi Miyahara, Peter Grutter, and Aashish A. Clerk

    E-Print Network [OSTI]

    Grütter, Peter

    Strong Electromechanical Coupling of an Atomic Force Microscope Cantilever to a Quantum Dot Steven [2]. Electromechanical systems that have attracted considerable attention recently include quantum. In this Letter we study strong coupling effects, both theoretically and experimentally, in an electromechanical

  1. HaloTag protein-mediated specific labeling of living cells with quantum dots Min-kyung So, Hequan Yao 1

    E-Print Network [OSTI]

    Rao, Jianghong

    as quantum dots, QDs). Semiconductor QDs are a class of new material intermediate be- tween small molecules and bulk size materials, and possess unique electrical and optical properties due to the quantum

  2. Vanishing fine structure splittings in telecom wavelength quantum dots grown on (111)A surfaces by droplet epitaxy

    E-Print Network [OSTI]

    X. Liu; N. Ha; H. Nakajima; T. Mano; T. Kuroda; B. Urbaszek; H. Kumano; I. Suemune; Y. Sakuma; K. Sakoda

    2014-06-18

    The emission cascade of a single quantum dot is a promising source of entangled photons. A prerequisite for this source is the use of a symmetric dot analogous to an atom in a vacuum, but the simultaneous achievement of structural symmetry and emission in a telecom band poses a challenge. Here we report the growth and characterization of highly symmetric InAs/InAlAs quantum dots self-assembled on C3v symmetric InP(111)A. The broad emission spectra cover the O (1.3 micron-m), C (1.55 micron-m), and L (1.6 micron-m) telecom bands. The distribution of the fine-structure splittings is considerably smaller than those reported in previous works on dots at similar wavelengths. The presence of dots with degenerate exciton lines is further confirmed by the optical orientation technique. Thus, our dot systems are expected to serve as efficient entangled photon emitters for long-distance fiber-based quantum key distribution.

  3. Influence of Cationic Precursors on CdS Quantum-Dot-Sensitized Solar Cell Prepared by Successive Ionic Layer Adsorption and

    E-Print Network [OSTI]

    Cao, Guozhong

    for QDSCs, CdS/CdSe-QD- cosensitized solar cells are most attractive and recently have been reportedInfluence of Cationic Precursors on CdS Quantum-Dot-Sensitized Solar Cell Prepared by Successive (QDs) onto porous oxide films for quantum-dot-sensitized solar cell (QDSC) applications. In this work

  4. Quantum dot formation on a strain-patterned epitaxial thin film S. M. Wise, J. S. Lowengrub, and J. S. Kim

    E-Print Network [OSTI]

    Lowengrub, John

    Quantum dot formation on a strain-patterned epitaxial thin film S. M. Wise, J. S. Lowengrub, and J. Voorhees Materials Science and Engineering Department, Northwestern University, Evanston, Illinois 60208 as a potential pathway for the formation of ordered quantum dot QD arrays. Recent experimental work has suggested

  5. FA12 Nanoscale Devices & Systems MS Exam Solution 1. For small semiconductor quantum dot structures, the single-electron charging energy can

    E-Print Network [OSTI]

    California at San Diego, University of

    FA12 Nanoscale Devices & Systems MS Exam Solution 1. For small semiconductor quantum dot structures, the single-electron charging energy can become comparable to the quantum confinement energies in the dot effective mass 0 * 5.0 mmp , where m0 is the free electron mass. An infinite potential energy barrier

  6. Nanocrystal quantum dots: building blocks for tunable optical amplifiers and lasers

    SciTech Connect (OSTI)

    Mikhailovsky, A. A.; Malko, A. V.; Klimov, V. I.; Leatherdale, C. A.; Eisler, H-J.; Bawendi, M.; Hollingsworth, J. A.

    2001-01-01

    We study optical processes relevant to optical amplification and lasing in CdSe nanocrystal quantum dots (NQD). NQDs are freestanding nanoparticles prepared using solution-based organometallic reactions originally developed for the Cd chalcogenides, CdS, CdSe and CdTe [J. Am. Chem. Soc. 115, 8706 (1993)]. We investigate NQDs with diameters ranging from 2 to 8 nm. Due to strong quantum confinement, they exhibit size-dependent spectral tunability over an energy range as wide as several hundred meV. We observe a strong effect of the matrix/solvent on optical gain properties of CdSe NQDs. In most of the commonly used solvents (such as hexane and toluene), gain is suppressed due to strong photoinduced absorption associated with carriers trapped at solvent-related interface states. In contrast, matrix-free close packed NQD films (NQD solids) exhibit large optical gain with a magnitude that is sufficiently high for the optical gain to successfully compete with multiparticle Auger recombination [Science 287, 10117 (2000)]. These films exhibit narrowband stimulated emission at both cryogenic and room temperature, and the emission color is tunable with dot size [Science 290, 314 (2000)]. Moreover, the NQD films can be incorporated into microcavities of different geometries (micro-spheres, wires, tubes) that produce lasing in whispering gallery modes. The facile preparation, chemical flexibility and wide-range spectral tunability due to strong quantum confinement are the key advantages that should motivate research into NQD applications in optical amplifiers and lasers.

  7. Quantum-dot all-optical logic in a structured vacuum

    SciTech Connect (OSTI)

    Ma Xun; John, Sajeev [Department of Physics, University of Toronto, Toronto, M5S 1A7 (Canada)

    2011-07-15

    We demonstrate multiwavelength channel optical logic operations on the Bloch vector of a quantum two-level system in the structured electromagnetic vacuum of a bimodal photonic crystal waveguide. This arises through a bichromatic strong-coupling effect that enables unprecedented control over single quantum-dot (QD) excitation through two beams of ultrashort femtojoule pulses. The second driving pulse (signal) with slightly different frequency and weaker strength than the first (holding) pulse leads to controllable strong modulation of the QD Bloch vector evolution path. This occurs through resonant coupling of the signal pulse with the Mollow sideband transitions created by the holding pulse. The movement of the Mollow sidebands during the passage of the holding pulse leads to an effective chirping in transition frequency seen by the signal. Bloch vector dynamics in the rotating frame of the signal pulse and within the dressed-state basis created by the holding pulse reveals that this chirped coupling between the signal pulse and the Mollow sidebands leads to either augmentation or negation of the final quantum-dot population (after pulse passage) compared to the outcome of the holding pulse alone and depending on the relative frequencies of the pulses. By making use of this extra degree of freedom for ultrafast control of QD excitations, applications in ultrafast all-optical logic and, or, and not gates are proposed in the presence of significant (0.1) THz nonradiative dephasing and (about 1%) inhomogeneous broadening.

  8. Flowing versus Static Conditions for Measuring Multiple Exciton Generation in PbSe Quantum Dots

    SciTech Connect (OSTI)

    Midgett, Aaron G. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States); Hillhouse, Hugh W. [Univ. of Washington, Seattle, WA (United States); Hughes, Barbara K. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States); Nozik, Arthur J. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States); Beard, Matthew C. [Univ. of Colorado, Boulder, CO (United States)

    2010-09-22

    Recent reports question the validity of pulsed fs-laser experiments for measuring the photon-to-exciton quantum yields (QYs) that result from multiple exciton generation (MEG). The repetitive nature of these experiments opens up an alternative relaxation pathway that may produce artificially high results. We present transient-absorption (TA) data for 4.6 and 6.6 nm diameter PbSe quantum dots (QDs) at a variety of pump photon energies. The data are collected under laminar flow conditions with volumetric flow rates ranging from 0 to 150 mL/min (resulting in Reynolds numbers up to 460). The results are modeled with a spatially resolved population balance of generation, recombination, convective replacement, and accumulation of long-lived excited QDs. By comparing the simulations and experiments, the steady-state population of the long-lived QD-excited states and their kinetics are determined for different experimental conditions. We also improve upon reported photon-to-exciton QYs for PbSe QDs. We find differences in the observed TA dynamics between flowing and static conditions that depend upon photon fluence, pump photon energy, and quality of the QD surfaces. For excitation energies below 2 Eg, independent of QD size or photon fluence, we observe no flow rate dependence in the TA dynamics. At excitation energies of h? > 3 Eg, we observe differences between static and flowing conditions that are most pronounced for high photon fluences. At 3.7 Eg and for 4.6 nm PbSe QDs we find a QY of 1.2 ± 0.1 and at 4.5 Eg the QY is 1.55 ± 0.05. With 6.6 nm QDs excited at 4.7 Eg we observe no difference between static and flowing conditions and find a QY of 1.61 ± 0.05. We also find that by treating the surface of QDs, we can decrease the charging probability (Pg ? 5 × 10-5) by a factor of 3-4. The observed variations suggest that different QD samples vary regarding their susceptibility to the creation of long-lived states.

  9. Synthesis of indium sulphide quantum dots in perfluoronated ionomer membrane

    SciTech Connect (OSTI)

    Sumi, R. [Centre for Nanotechnology Research, VIT University, Vellore (India); Warrier, Anita R.; Vijayan, C. [Department of Physics, Indian Institute of Technology, Chennai (India)

    2014-01-28

    In this paper, we demonstrate a simple and efficient method for synthesis of ?-indium sulphide (In{sub 2}S{sub 3}) nanoparticles embedded in an ionomer matrix (nafion membrane). The influence of reaction temperature on structural, compositional and optical properties of these films were analysed using X-Ray Diffraction, EDAX, UV-Vis absorption spectroscopy and photoluminescence studies. Average particle diameter was estimated using modified effective mass approximation method. Absorption spectra of In{sub 2}S{sub 3} nanoparticles show blue shift compared to bulk In{sub 2}S{sub 3}, indicating strong quantum size confinement effects. PL emission in the wavelength range 530–600 nm was recorded using a 488 nm line from an Ar{sup +} laser as the excitation source.

  10. Increased InAs quantum dot size and density using bismuth as a surfactant Vaishno D. Dasika, E. M. Krivoy, H. P. Nair, S. J. Maddox, K. W. Park, D. Jung, M. L. Lee, E. T. Yu, and S. R.

    E-Print Network [OSTI]

    Yu, Edward T.

    As quantum dots grown by solid-source molecular beam epitaxy on InP(001) Appl. Phys. Lett. 89, 123112 (2006Increased InAs quantum dot size and density using bismuth as a surfactant Vaishno D. Dasika, E. M by the AIP Publishing Articles you may be interested in RHEED transients during InAs quantum dot growth

  11. Monovalent, reduced-size quantum dots for imaging

    E-Print Network [OSTI]

    . The small size improved access of QD-labeled glutamate receptors to neuronal synapses, and monovalency small QDs (sQDs) had a hydrodynamic diameter of 11.1 ± 0.1 nm, not much larger than an immunoglobulinQDs or commercial streptavidin-QD605 (hydro- dynamic diameter 21.2 ± 0.2 nm; Supplementary Fi

  12. Decoherence by electromagnetic fluctuations in double-quantum-dot charge qubits

    E-Print Network [OSTI]

    Diego C. B. Valente; Eduardo R. Mucciolo; F. K. Wilhelm

    2010-09-24

    We discuss decoherence due to electromagnetic fluctuations in charge qubits formed by two lateral quantum dots. We use an effective circuit model to evaluate correlations of voltage fluctuations in the qubit setup. These correlations allows us to estimate energy (T1) and phase (T2) relaxation times of the the qubit system. Our theoretical estimate of the quality factor due to dephasing by electromagnetic fluctuations yields values much higher than those found in recent experiments, indicating that other sources of decoherence play a dominant role.

  13. Resolved Sideband Emission of InAs/GaAs Quantum Dots Strained by Surface Acoustic Waves

    E-Print Network [OSTI]

    Michael Metcalfe; Stephen M. Carr; Andreas Muller; Glenn S. Solomon; John Lawall

    2010-08-13

    The dynamic response of InAs/GaAs self-assembled quantum dots (QDs) to strain is studied experimentally by periodically modulating the QDs with a surface acoustic wave and measuring the QD fluorescence with photoluminescence and resonant spectroscopy. When the acoustic frequency is larger than the QD linewidth, we resolve phonon sidebands in the QD fluorescence spectrum. Using a resonant pump laser, we have demonstrated optical frequency conversion via the dynamically modulated QD, which is the physical mechanism underlying laser sideband cooling a nanomechanical resonator by means of an embedded QD.

  14. Highly polarized light emission by isotropic quantum dots integrated with magnetically aligned segmented nanowires

    SciTech Connect (OSTI)

    Uran, Can; Erdem, Talha; Guzelturk, Burak; Perkgöz, Nihan Kosku; Jun, Shinae; Jang, Eunjoo; Demir, Hilmi Volkan

    2014-10-06

    In this work, we demonstrate a proof-of-concept system for generating highly polarized light from colloidal quantum dots (QDs) coupled with magnetically aligned segmented Au/Ni/Au nanowires (NWs). Optical characterizations reveal that the optimized QD-NW coupled structures emit highly polarized light with an s-to p-polarization (s/p) contrast as high as 15:1 corresponding to a degree of polarization of 0.88. These experimental results are supported by the finite-difference time-domain simulations, which demonstrate the interplay between the inter-NW distance and the degree of polarization.

  15. Mid infrared optical properties of Ge/Si quantum dots with different doping level

    SciTech Connect (OSTI)

    Sofronov, A. N.; Firsov, D. A.; Vorobjev, L. E.; Shalygin, V. A.; Panevin, V. Yu.; Vinnichenko, M. Ya.; Tonkikh, A. A.; Danilov, S. N.

    2013-12-04

    Optical characterization of the Ge/Si quantum dots using equilibrium and photo-induced absorption spectroscopy in the mid-infrared spectral range was performed in this work. Equilibrium absorption spectra were measured in structures with various doping levels for different light polarizations. Photo-induced absorption spectra measured in undoped structure under interband optical excitation of non-equilibrium charge carriers demonstrate the same features as doped sample in equilibrium conditions. Hole energy spectrum was determined from the analysis of experimental data.

  16. Shaping the composition profiles in heteroepitaxial quantum dots: Interplay of thermodynamic and kinetic effects

    SciTech Connect (OSTI)

    Georgiou, C.; Leontiou, T.; Kelires, P. C.

    2014-07-15

    Atomistic Monte Carlo simulations, coupling thermodynamic and kinetic effects, resolve a longstanding controversy regarding the origin of composition profiles in heteroepitaxial SiGe quantum dots. It is shown that profiles with cores rich in the unstrained (Si) component derive from near-equilibrium processes and intraisland diffusion. Profiles with cores rich in the strained (Ge) component are of nonequilibrium nature, i.e., they are strain driven but kinetically limited. They are shaped by the distribution of kinetic barriers of atomic diffusion in the islands. The diffusion pathways are clearly revealed for the first time. Geometrical kinetics play a minor role.

  17. High excitation power photoluminescence studies of ultra-low density GaAs quantum dots

    SciTech Connect (OSTI)

    Sonnenberg, D.; Graf, A.; Paulava, V.; Heyn, Ch.; Hansen, W. [Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg (Germany)

    2013-12-04

    We fabricate GaAs epitaxial quantum dots (QDs) by filling of self-organized nanoholes in AlGaAs. The QDs are fabricated under optimized process conditions and have ultra-low density in the 10{sup 6} cm{sup ?2} regime. At low excitation power the optical emission of single QDs exhibit sharp excitonic lines, which are attributed to the recombination of excitonic and biexcitonic states. High excitation power measurements reveal surprisingly broad emission lines from at least six QD shell states.

  18. Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby

    DOE Patents [OSTI]

    Semonin, Octavi Escala; Luther, Joseph M; Beard, Matthew C; Chen, Hsiang-Yu

    2014-04-01

    A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

  19. Cascaded exciton emission of an individual strain-induced quantum dot

    E-Print Network [OSTI]

    Schülein, F J R; Riikonen, J; Mattila, M; Sopanen, M; Lipsanen, H; Finley, J J; Wixforth, A; Krenner, H J; 10.1063/1.3216807

    2010-01-01

    Single strain-induced quantum dots are isolated for optical experiments by selective removal of the inducing InP islands from the sample surface. Unpolarized emission of single, bi- and triexciton transitions are identified by power-dependent photoluminescence spectroscopy. Employing time-resolved experiments performed at different excitation powers we find a pronounced shift of the rise and decay times of these different transitions as expected from cascaded emission. Good agreement is found for a rate equation model for a three step cascade.

  20. Cascaded exciton emission of an individual strain-induced quantum dot

    E-Print Network [OSTI]

    F. J. R. Schülein; A. Laucht; J. Riikonen; M. Mattila; M. Sopanen; H. Lipsanen; J. J. Finley; A. Wixforth; H. J. Krenner

    2009-08-12

    Single strain-induced quantum dots are isolated for optical experiments by selective removal of the inducing InP islands from the sample surface. Unpolarized emission of single, bi- and triexciton transitions are identified by power-dependent photoluminescence spectroscopy. Employing time-resolved experiments performed at different excitation powers we find a pronounced shift of the rise and decay times of these different transitions as expected from cascaded emission. Good agreement is found for a rate equation model for a three step cascade.

  1. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  2. Generation of three polarization-correlated photons from a single semiconductor quantum dot

    SciTech Connect (OSTI)

    Arashida, Y.; Ogawa, Y.; Minami, F. [Department of Physics, Tokyo Institute of Technology, Oh-okayama 2-12-1, Tokyo (Japan)

    2013-12-04

    We performed polarization-resolved cross-correlation measurements on a radiative cascade of a charged tri-exciton in a single quantum dot. Photoluminescence spectra showed rich peaks arising from the formation of charged excitonic complexes. The energy structure in the cascade transition of a charged tri-exciton was explained by the exchange interaction. By using one transition pathway of the cascade, whose intermediate states form spin-triplet states, we succeeded in generating three polarization-correlated photons with circular polarization.

  3. Determination of the Exciton Binding Energy in CdSe Quantum Dots

    SciTech Connect (OSTI)

    Meulenberg, R; Lee, J; Wolcott, A; Zhang, J; Terminello, L; van Buuren, T

    2009-10-27

    The exciton binding energy (EBE) in CdSe quantum dots (QDs) has been determined using x-ray spectroscopy. Using x-ray absorption and photoemission spectroscopy, the conduction band (CB) and valence band (VB) edge shifts as a function of particle size have been determined and combined to obtain the true band gap of the QDs (i.e. without and exciton). These values can be compared to the excitonic gap obtained using optical spectroscopy to determine the EBE. The experimental EBE results are compared with theoretical calculations on the EBE and show excellent agreement.

  4. Charge transport and memristive properties of graphene quantum dots embedded in poly(3-hexylthiophene) matrix

    SciTech Connect (OSTI)

    Cosmin Obreja, Alexandru; Cristea, Dana; Radoi, Antonio; Gavrila, Raluca; Comanescu, Florin; Kusko, Cristian; Mihalache, Iuliana

    2014-08-25

    We show that graphene quantum dots (GQD) embedded in a semiconducting poly(3-hexylthiophene) polymeric matrix act as charge trapping nanomaterials. In plane current-voltage (I-V) measurements of thin films realized from this nanocomposite deposited on gold interdigitated electrodes revealed that the GQD enhanced dramatically the hole transport. I-V characteristics exhibited a strong nonlinear behavior and a pinched hysteresis loop, a signature of a memristive response. The transport properties of this nanocomposite were explained in terms of a trap controlled space charge limited current mechanism.

  5. Coherence and degree of time-bin entanglement from quantum dots

    E-Print Network [OSTI]

    Tobias Huber; Laurin Ostermann; Maximilian Prilmüller; Glenn S. Solomon; Helmut Ritsch; Gregor Weihs; Ana Predojevi?

    2015-06-08

    We report on the generation of time-bin entangled photon pairs from a semiconductor quantum dot via pulsed resonant biexciton generation. Based on theoretical modeling we optimized the duration of the excitation pulse to minimize the laser-induced dephasing and increase the biexciton-to-background single exciton occupation probability. This results in a high degree of entanglement with a concurrence of up to 0.78(6) and a 0.88(3) overlap with a maximally entangled state. Theoretical simulations also indicate a power dependent nature of the dephasing during the laser excitation that limits the coherence of the excitation process.

  6. Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot

    SciTech Connect (OSTI)

    Deshpande, Saniya; Frost, Thomas; Hazari, Arnab; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109 (United States)

    2014-10-06

    We demonstrate a semiconductor quantum dot based electrically pumped single-photon source operating at room temperature. Single photons emitted in the red spectral range from single In{sub 0.4}Ga{sub 0.6}N/GaN quantum dots exhibit a second-order correlation value g{sup (2)}(0) of 0.29, and fast recombination lifetime ?1.3 ±0.3 ns at room temperature. The single-photon source can be driven at an excitation repetition rate of 200?MHz.

  7. Liquid-phase plasma synthesis of silicon quantum dots embedded in carbon matrix for lithium battery anodes

    SciTech Connect (OSTI)

    Wei, Ying [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); College of Chemistry and Chemical Engineering, Bohai University, Jinzhou 121000 (China); Yu, Hang; Li, Haitao; Ming, Hai; Pan, Keming; Huang, Hui [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); Liu, Yang, E-mail: yangl@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); Kang, Zhenhui, E-mail: zhkang@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China)

    2013-10-15

    Graphical abstract: - Highlights: • Silicon quantum dots embedded in carbon matrix (SiQDs/C) were fabricated. • SiQDs/C exhibits excellent battery performance as anode materials with high specific capacity. • The good performance was attributed to the marriage of small sized SiQDs and carbon. - Abstract: Silicon quantum dots embedded in carbon matrix (SiQDs/C) nanocomposites were prepared by a novel liquid-phase plasma assisted synthetic process. The SiQDs/C nanocomposites were demonstrated to show high specific capacity, good cycling life and high coulmbic efficiency as anode materials for lithium-ion battery.

  8. Energy-selective optical excitation and detection in InAs/InP quantum dot ensembles using a one-dimensional optical microcavity

    SciTech Connect (OSTI)

    Gamouras, A.; Britton, M.; Khairy, M. M.; Mathew, R.; Hall, K. C.; Dalacu, D.; Poole, P.; Poitras, D.; Williams, R. L.

    2013-12-16

    We demonstrate the selective optical excitation and detection of subsets of quantum dots (QDs) within an InAs/InP ensemble using a SiO{sub 2}/Ta{sub 2}O{sub 5}-based optical microcavity. The low variance of the exciton transition energy and dipole moment tied to the narrow linewidth of the microcavity mode is expected to facilitate effective qubit encoding and manipulation in a quantum dot ensemble with ease of quantum state readout relative to qubits encoded in single quantum dots.

  9. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

    SciTech Connect (OSTI)

    Khmissi, H.; Baira, M.; Bouzaieene, L.; Saidi, F.; Maaref, H. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Sfaxi, L. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Universite de Sousse Faculte des Sciences de Monastir, Avenue de l'Environnement 5019 Monastir (Tunisia); Bru-Chevallier, C. [Institut des Nanotechnologies de Lyon (INL), CNRS UMR-5270, INSA-LYON, 7, Avenue Jean Capelle, Bat. Blaise Pascal, 69621 Villeurbanne (France)

    2011-03-01

    Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E{sub 1}-HH{sub 1}) and the first excited state (E{sub 2}-HH{sub 2}). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

  10. Localized surface plasmon and exciton interaction in silver-coated cadmium sulphide quantum dots

    SciTech Connect (OSTI)

    Ghosh, P.; Rustagi, K. C.; Vasa, P.; Singh, B. P.

    2015-05-15

    Localized surface plasmon and exciton coupling has been investigated on colloidal solutions of silver-coated CdS nanoparticles (NPs), synthesized by gamma irradiation. Two broad photoluminescence (PL) bands (blue/red) corresponding to band to band and defect state transitions have been observed for the bare and coated samples. In case of bare CdS NPs, the intensity of the red PL peak is about ten times higher than the blue PL peak intensity. However, on coating the CdS NPs with silver, the peak intensity of the blue PL band gets enhanced and becomes equal to that of the red PL band. High-resolution transmission electron microscopic (HRTEM) images adequately demonstrate size distribution of these metal/semiconductor nanocomposites. UV-Vis absorption studies show quantum confinement effect in these semiconductor quantum dot (SQD) systems. Absorption spectrum of silver-coated SQDs shows signature of surface plasmon-exciton coupling which has been theoretically verified.

  11. Epitaxial lift-off of quantum dot enhanced GaAs single junction solar cells

    SciTech Connect (OSTI)

    Bennett, Mitchell F.; Bittner, Zachary S.; Forbes, David V.; Hubbard, Seth M.; Rao Tatavarti, Sudersena; Wibowo, Andree; Pan, Noren; Chern, Kevin; Phillip Ahrenkiel, S.

    2013-11-18

    InAs/GaAs strain-balanced quantum dot (QD) n-i-p solar cells were fabricated by epitaxial lift-off (ELO), creating thin and flexible devices that exhibit an enhanced sub-GaAs bandgap current collection extending into the near infrared. Materials and optical analysis indicates that QD quality after ELO processing is preserved, which is supported by transmission electron microscopy images of the QD superlattice post-ELO. Spectral responsivity measurements depict a broadband resonant cavity enhancement past the GaAs bandedge, which is due to the thinning of the device. Integrated external quantum efficiency shows a QD contribution to the short circuit current density of 0.23?mA/cm{sup 2}.

  12. Light-assisted recharging of graphene quantum dots in fluorographene matrix

    SciTech Connect (OSTI)

    Antonova, I. V. [A.V. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Acad. Lavrentiev Avenue 13, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Pirogov Street 2, Novosibirsk 630090 (Russian Federation); Nebogatikova, N. A.; Prinz, V. Ya. [A.V. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Acad. Lavrentiev Avenue 13, Novosibirsk 630090 (Russian Federation); Popov, V. I.; Smagulova, S. A. [North - East Federal University, Yakutsk (Russian Federation)

    2014-10-07

    In the present study, the charge transient spectroscopy was used to analyze the transient relaxation of charges in graphene and bilayer-graphene quantum dot (QD) systems formed by chemical functionalization of graphene and few-layer graphene layers. A set of activation energies (one to three different values) for the emission of charges from QDs sized 50 to 70 nm, most likely proceeding via the thermal activation of charge carriers from QD quantum confinement levels, were deduced from measurements performed in the dark. Daylight illumination of samples during measurements was found to result in a strong decrease of the activation energies and in an involvement of an athermal process in the charge relaxation phenomenon. The time of the light-assisted emission of charge carriers from QDs proved to be two to four orders of magnitude shorter than the time of their emission from QDs under no-illumination conditions.

  13. Edge states in graphene quantum dots: Fractional quantum Hall effect analogies and differences at zero magnetic field

    E-Print Network [OSTI]

    Igor Romanovsky; Constantine Yannouleas; Uzi Landman

    2009-01-15

    We investigate the way that the degenerate manifold of midgap edge states in quasicircular graphene quantum dots with zig-zag boundaries supports, under free-magnetic-field conditions, strongly correlated many-body behavior analogous to the fractional quantum Hall effect (FQHE), familiar from the case of semiconductor heterostructures in high magnetic fields. Systematic exact-diagonalization (EXD) numerical studies are presented for the first time for 5 graphene REMs exhibit in all instances a single (0,N) polygonal-ring molecular (crystalline) structure, with all the electrons localized on the edge. Disruptions in the zig-zag boundary condition along the circular edge act effectively as impurities that pin the electron molecule, yielding single-particle densities with broken rotational symmetry that portray directly the azimuthal localization of the edge electrons.

  14. Nonequilibrium thermal effects on exciton time correlations in coupled semiconductor quantum dots

    SciTech Connect (OSTI)

    Castillo, J. C.; Rodríguez, F. J.; Quiroga, L.

    2013-12-04

    Theoretical guides to test 'macroscopic realism' in solid-state systems under quantum control are highly desirable. Here, we report on the evolution of a Leggett-Garg inequality (LGI), a combination of two-time correlations, in an out-of-equilibrium set up consisting of two interacting excitons confined in separate semiconductor quantum dots which are coupled to independent baths at different temperatures (T{sub 1} ? T{sub 2}). In a Markovian steady-state situation we found a rich variety of dynamical behaviors in different sectors of the average temperature (T{sub M}?=?(T{sub 1}+T{sub 2})/2) vs. coupling strength to the reservoirs (?) space parameter. For high T{sub M} and ? values the LGI is not violated, as expected. However, by decreasing T{sub M} or ? a sector of parameters appears where the LGI is violated at thermal equilibrium (T{sub 1} = T{sub 2}) and the violation starts decreasing when the system is moved out of the equilibrium. Surprisingly, at even lower T{sub M} values, for any ?, there is an enhancement of the LGI violation by exposing the system to a temperature gradient, i.e. quantum correlations increase in a nonequilibrium thermal situation. Results on LGI violations in a steady-state regime are compared with other non-locality-dominated quantum correlation measurements, such as concurrence and quantum discord, between the two excitons under similar temperature gradients.

  15. High color rendering index white light emitting diodes fabricated from a combination of carbon dots and zinc copper indium sulfide quantum dots

    SciTech Connect (OSTI)

    Sun, Chun; Liu, Wenyan; Zhang, Xiaoyu; Zhang, Yu E-mail: wyu6000@gmail.com; Wang, Yu; Kalytchuk, Sergii; Kershaw, Stephen V.; Rogach, Andrey L.; Zhang, Tieqiang; Zhao, Jun; Yu, William W. E-mail: wyu6000@gmail.com

    2014-06-30

    In a line with most recent trends in developing non-toxic fluorescent nanomaterials, we combined blue emissive carbon dots with green and red emissive zinc copper indium sulfide (ZCIS) core/shell quantum dots (QDs) to achieve white light-emitting diodes (WLEDs) with a high color rendering index of 93. This indicates that ZCIS QDs, with their broad emission bands, can be employed to effectively make up the emission of carbon dots in the yellow and red regions to produce WLEDs in the wide region of color temperature by tuning the volume ratio of these constituting luminophores. Their electroluminescence characteristics including color rendering index, Commission Internationale de l'Eclairage (CIE) color coordinates, and color temperatures were evaluated as a function of forward current. The CIE-1931 chromaticity coordinates of the as-prepared WLEDs, exhibiting good stability, were slightly shifted from (0.321, 0.312) at 10?mA to (0.351, 0.322) at 30?mA, which was mainly caused by the different thermal quenching coefficients of carbon dots and ZCIS QDs.

  16. Strong exciton-photon coupling with colloidal quantum dots in a high-Q bilayer microcavity

    SciTech Connect (OSTI)

    Giebink, Noel C; Wiederrecht, Gary P.; Wasielewski, Michael R

    2011-01-01

    We demonstrate evanescently coupled bilayer microcavities with Q -factors exceeding 250 fabricated by a simple spin-coating process. The cavity architecture consists of a slab waveguide lying upon a low refractive index spacer layer supported by a glass substrate. For a lossless guide layer, the cavity Q depends only on the thickness of the low index spacer and in principle can reach arbitrarily high values. We demonstrate the versatility of this approach by constructing cavities with a guide layer incorporating CdSe/ZnS core/shell quantum dots, where we observe strong coupling and hybridization between the 1S(e)-1S{sub 3/2} (h) and 1S(e)-2S{sub 3/2} (h) exciton states mediated by the cavity photon. This technique greatly simplifies the fabrication of high-Q planar microcavities for organic and inorganic quantum dot thin films and opens up new opportunities for the study of nonlinear optical phenomena in these materials.

  17. Effect of Ligands on Characteristics of (CdSe)13 Quantum Dot

    SciTech Connect (OSTI)

    Gao, Yang; Zhou, Bo; Kang, Seung-gu; Xin, Minsi; Yang, Ping; Dai, Xing; Wang, Zhigang; Zhou, Ruhong

    2014-01-01

    The widespread applications of quantum dots (QDs) have spurred an increasing interest in the study of their coating ligands, which can not only protect the electronic structures of the central QDs, but also control their permeability through biological membranes with both size and shape. In this work, we have used density functional theory (DFT) to investigate the electronic structures of (CdSe)13 passivated by OPMe2(CH2)nMe ligands with different lengths and various numbers of branches (Me=methyl group, n = 0, 1-3). Our results show that the absorption peak in the ultraviolet-visible (UV-vis) spectra displays a clear blue-shift, on the scale of ~100 nm, upon the binding of ligands. Once the total number of ligands bound with (CdSe)13 reached a saturated number (9 or 10), no more blue-shift occurred in the absorption peak in the UV-vis spectra. On the other hand, the aliphatic chain length of ligands has a negligible effect on the optical properties of the QD core. Analyses of the bonding characteristics confirm that optical transitions are dominantly governed by the central QD core rather than the organic passivation. Interestingly, the density of states (DOS) share similar characteristics as vibrational spectra, even though there is no coordination vibration mode between the ligands and the central QD. These findings might provide insights on the material design for the passivation of quantum dots for biomedical applications.

  18. Quantum Dot Light Enhancement Substrate for OLED Solid-State Lighting

    SciTech Connect (OSTI)

    James Perkins; Matthew Stevenson; Gagan Mahan; Seth Coe-Sullivan; Peter Kazlas

    2011-01-21

    With DOE Award No. DE-EE00000628, QD Vision developed and demonstrated a cost-competitive solution for increasing the light extraction efficiency of OLEDs with efficient and stable color rendering index (CRI) for solid state lighting (SSL). Solution processable quantum dot (QD) films were integrated into OLED ITO-glass substrates to generate tunable white emission from blue emitting OLED) devices as well as outcouple light from the ITO film. This QD light-enhancement substrate (QD-LED) technology demonstrated a 60% increase in OLED forward light out-coupling, a value which increases to 76% when considering total increase in multi-directional light output. The objective for the first year was an 80% increase in light output. This project seeks to develop and demonstrate a cost-competitive solution for realizing increased extraction efficiency organic light emitting devices (OLEDs) with efficient and stable color rendering index (CRI) for SSL. Solution processible quantum dot (QD) films will be utilized to generate tunable white emission from blue emitting phosphorescent OLED (Ph-OLED) devices.

  19. Quantum-Size Effects on the Pressure-Induced Direct-to-Indirect Band-Gap Transition in InP Quantum Dots

    SciTech Connect (OSTI)

    Fu, H.; Zunger, A.

    1998-06-01

    We predict that the difference in quantum confinement energies of {Gamma} -like and X -like conduction states in a covalent quantum dot will cause the direct-to-indirect transition to occur at substantially lower pressure than in the bulk material. Furthermore, the first-order transition in the bulk is predicted to become, for certain dot sizes, a second-order transition. Measurements of the {open_quotes}anticrossing gap{close_quotes} could thus be used to obtain unique information on the {Gamma}-X- L intervalley coupling, predicted here to be surprisingly large (50{endash}100thinspthinspmeV). {copyright} {ital 1998} {ital The American Physical Society}

  20. Gigahertz bandwidth electrical control over a dark exciton-based memory bit in a single quantum dot

    E-Print Network [OSTI]

    Ludwig-Maximilians-Universität, München

    the electron charge trapped in a single quantum dot. Our wafer structure gives us absolute control over electric fields applied between the back contact and the Schottky gate control electron tunneling from, forcing an electron spin-flip followed by recombination as a bright neutral exciton, or by charging

  1. Charge Relaxation in a Single-Electron Si=SiGe Double Quantum Dot C. Payette,1

    E-Print Network [OSTI]

    Petta, Jason

    relaxation time T1 of a single electron trapped in an accumulation mode Si=SiGe double quantum dot systematically measure the interdot relaxation time T1 of a single electron trapped in a Si DQD as a function- assisted tunneling (PAT) to probe the energy level structure of the single-electron system, demonstrating

  2. Measuring charge trap occupation and energy level in CdSe/ZnS quantum dots using a scanning tunneling microscope

    E-Print Network [OSTI]

    Hummon, M. R.

    We use a scanning tunneling microscope to probe single-electron charging phenomena in individual CdSe/ZnS (core/shell) quantum dots (QDs) at room temperature. The QDs are deposited on top of a bare Au thin film and form a ...

  3. Green route synthesis of high quality CdSe quantum dots for applications in light emitting devices

    SciTech Connect (OSTI)

    Bera, Susnata, E-mail: susnata.bera@gmail.com [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Singh, Shashi B. [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Ray, S.K., E-mail: physkr@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2012-05-15

    Investigation was made on light emitting diodes fabricated using CdSe quantum dots. CdSe quantum dots were synthesized chemically using olive oil as the capping agent, instead of toxic phosphine. Room temperature photoluminescence investigation showed sharp 1st excitonic emission peak at 568 nm. Bi-layer organic/inorganic (P3HT/CdSe) hybrid light emitting devices were fabricated by solution process. The electroluminescence study showed low turn on voltage ({approx}2.2 V) .The EL peak intensity was found to increase by increasing the operating current. - Graphical abstract: Light emitting diode was fabricated using CdSe quantum dots using olive oil as the capping agent, instead of toxic phosphine. Bi-layer organic/inorganic (P3HT/CdSe) hybrid light emitting device shows strong electroluminescence in the range 630-661 nm. Highlights: Black-Right-Pointing-Pointer CdSe Quantum dots were synthesized using olive oil as the capping agent. Black-Right-Pointing-Pointer Light emitting device was fabricated using CdSe QDs/P3HT polymer heterojunction. Black-Right-Pointing-Pointer The I-V characteristics study showed low turn on voltage at {approx}2.2 V. Black-Right-Pointing-Pointer The EL peak intensity increases with increasing the operating current.

  4. InAs(ZnCdS) Quantum Dots Optimized for Biological Imaging in the Near-Infrared

    E-Print Network [OSTI]

    Allen, Peter M.

    We present the synthesis of InAs quantum dots (QDs) with a ZnCdS shell with bright and stable emission in the near-infrared (NIR, 700?900 nm) region for biological imaging applications. We demonstrate how NIR QDs can image ...

  5. Substrate-and Time-Dependent Photoluminescence of Quantum Dots Inside the Ultrathin Polymer LbL Film

    E-Print Network [OSTI]

    Lin, Zhiqun

    of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, and DepartmentSubstrate- and Time-Dependent Photoluminescence of Quantum Dots Inside the Ultrathin Polymer Lb of Materials Science and Engineering, Iowa State UniVersity, Ames, Iowa 50011 ReceiVed December 20, 2006

  6. Adiabatic many-body state preparation and information transfer in quantum dot arrays

    E-Print Network [OSTI]

    Umer Farooq; Abolfazl Bayat; Stefano Mancini; Sougato Bose

    2015-04-27

    Quantum simulation of many-body systems are one of the most interesting tasks of quantum technology. Among them is the preparation of a many-body system in its ground state when the vanishing energy gap makes the cooling mechanisms ineffective. Adiabatic theorem, as an alternative to cooling, can be exploited for driving the many-body system to its ground state. In this paper, we study two most common disorders in quantum dot arrays, namely exchange coupling fluctuations and hyperfine interaction, in adiabatically preparation of ground state in such systems. We show that the adiabatic ground state preparation is highly robust against those disorder effects making it good analog simulator. Moreover, we also study the adiabatic classical information transfer, using singlet-triplet states, across a spin chain. In contrast to ground state preparation the transfer mechanism is highly affected by disorder and in particular, the hyperfine interaction is very destructive for the performance. This suggests that for communication tasks across such arrays adiabatic evolution is not as effective and quantum quenches could be preferable.

  7. Photonic spatial Bell-state analysis for robust quantum secure direct communication using quantum dot-cavity systems

    E-Print Network [OSTI]

    Bao-Cang Ren; Hai-Rui Wei; Ming Hua; Tao Li; Fu-Guo Deng

    2013-03-30

    Recently, experiments showed that the spatial-mode states of entangled photons are more robust than their polarization-mode states in quantum communications. Here we construct a complete and deterministic protocol for analyzing the spatial Bell states using the interaction between a photon and an electron spin in a charged quantum dot inside a one-side micropillar microcavity. A quantum nondemolition detector (QND) for checking the parity of a two-photon system can be constructed with the giant optical Faraday rotation in this solid state system. With this parity-check QND, we present a complete and deterministic proposal for the analysis of the four spatial-mode Bell states. Moreover, we present a robust two-step quantum secure direct communication protocol based on the spatial-mode Bell states and the photonic spatial Bell-state analysis. Our analysis shows that our BSA proposal works in both the strong and the weak coupling regimes if the side leakage and cavity loss rate is small.

  8. Finite-size scaling analysis of spin correlations and fluctuations of two quantum dots in a T-shape geometry

    SciTech Connect (OSTI)

    Heidrich-Meisner, Fabian; Martins, G. B.; Al Hassanieh, Khaled A; Feiguin, A. E.; Dagotto, Elbio R

    2008-01-01

    The study of interacting nanostructures such as quantum dots is a playground for several novel numerical approaches. Recently developed methods such as the time-dependent density matrix renormalization approach or the embedded-cluster approximation rely on the numerical solution of clusters of finite-size. For the interpretation of numerical results, it is important to understand finite-size and boundary effects. Here, we study spin fluctuations and spin spin correlations of two dots coupled in a T-shape geometry. Depending on odd even effects, quite different results emerge from clusters that do not differ much in size. r 2007 Elsevier B.V. All rights reserved.

  9. Shot noise of charge current in a quantum dot responded by rotating and oscillating magnetic fields

    SciTech Connect (OSTI)

    Zhao, Hong-Kang Zou, Wei-Ke; Chen, Qiao

    2014-09-07

    We have investigated the shot noise and Fano factor of the dynamic spin-polarized quantum dot under the perturbations of a rotating magnetic field (RMF), and an oscillating magnetic field (OMF) by employing the non-equilibrium Green's function approach. The shot noise is enhanced from sub-Poissonian to super-Poissonian due to the application of RMF and OMF, and it is controlled sensitively by the tilt angle ? of RMF. The magnitude of shot noise increases as the photon energy ?? of OMF increases, and its valley eventually is reversed to peaks as the photon energy is large enough. Double-peak structure of Fano factor is exhibited as the frequency of OMF increases to cover a large regime. The Zeeman energy ?{sub 0}B{sub 0} acts as an effective gate bias to exhibit resonant behavior, and novel peak emerges associated with the applied OMF.

  10. Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

    SciTech Connect (OSTI)

    Yerino, Christopher D.; Jung, Daehwan; Lee, Minjoo Larry; Simmonds, Paul J.; Liang, Baolai; Huffaker, Diana L.; Schneider, Christian; Unsleber, Sebastian; Vo, Minh; Kamp, Martin; Höfling, Sven

    2014-12-22

    Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6??eV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.

  11. Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots

    SciTech Connect (OSTI)

    Zhang, Lei, E-mail: mejswu@ust.hk; Chen, Haibin, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk; Wu, Jingshen, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong and Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong); Bi, Xianghong, E-mail: takubatch@gmail.com [Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong)

    2014-05-15

    Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence.

  12. Charge Relaxation in a Single Electron Si/SiGe Double Quantum Dot

    E-Print Network [OSTI]

    K. Wang; C. Payette; Y. Dovzhenko; P. W. Deelman; J. R. Petta

    2013-04-15

    We measure the interdot charge relaxation time T_1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals the presence of a low lying excited state. We systematically measure T_1 as a function of detuning and interdot tunnel coupling and show that it is tunable over four orders of magnitude, with a maximum of 45 microseconds for our device configuration. Measured relaxation times are consistent with a phonon mediated energy relaxation process and indicate that low lying excited states may have important implications in the development of silicon spin qubits.

  13. Emission Properties from ZnO Quantum Dots Dispersed in SiO{sub 2} Matrix

    SciTech Connect (OSTI)

    Panigrahi, Shrabani; Basak, Durga

    2011-07-15

    Dispersion of ZnO quantum dots in SiO{sub 2} matrix has been achieved in two techniques based on StOeber method to form ZnO QDs-SiO{sub 2} nanocomposites. Sample A is formed with random dispersion by adding tetraethyl orthosilicate (TEOS) to an ethanolic solution of ZnO nanoparticles and sample B is formed with a chain-like ordered dispersion by adding ZnO nanoparticles to an already hydrolyzed ethanolic TEOS solution. The photoluminescence spectra of the as-grown nanocomposites show strong emission in the ultraviolet region. When annealed at higher temperature, depending on the sample type, these show strong red or white emission. Interestingly, when the excitation is removed, the orderly dispersed ZnO QDs-SiO{sub 2} composite shows a very bright blue fluorescence visible by naked eyes for few seconds indicating their promise for display applications.

  14. Excitonic enhancement of nonradiative energy transfer to bulk silicon with the hybridization of cascaded quantum dots

    SciTech Connect (OSTI)

    Yeltik, Aydan; Guzelturk, Burak; Akhavan, Shahab; Ludwig Hernandez-Martinez, Pedro; Volkan Demir, Hilmi

    2013-12-23

    We report enhanced sensitization of silicon through nonradiative energy transfer (NRET) of the excitons in an energy-gradient structure composed of a cascaded bilayer of green- and red-emitting CdTe quantum dots (QDs) on bulk silicon. Here NRET dynamics were systematically investigated comparatively for the cascaded energy-gradient and mono-dispersed QD structures at room temperature. We show experimentally that NRET from the QD layer into silicon is enhanced by 40% in the case of an energy-gradient cascaded structure as compared to the mono-dispersed structures, which is in agreement with the theoretical analysis based on the excited state population-depopulation dynamics of the QDs.

  15. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  16. Fluorescence modulation in single CdSe quantum dots by moderate applied electric fields

    SciTech Connect (OSTI)

    LeBlanc, Sharonda J. [Department of Physics and Optical Science, University of North Carolina at Charlotte, 9201 University City Boulevard, Charlotte, North Carolina 28223 (United States); Department of Mechanical Engineering and Engineering Science, University of North Carolina at Charlotte, 9201 University City Boulevard, Charlotte, North Carolina 28223 (United States); McClanahan, Mason R.; Moyer, Tully; Moyer, Patrick J. [Department of Physics and Optical Science, University of North Carolina at Charlotte, 9201 University City Boulevard, Charlotte, North Carolina 28223 (United States); Jones, Marcus [Department of Chemistry, University of North Carolina at Charlotte, 9201 University City Boulevard, Charlotte, North Carolina 28223 (United States)

    2014-01-21

    Single molecule time-resolved fluorescence spectroscopy of CdSe/ZnS core-shell quantum dots (QDs) under the influence of moderate applied electric fields reveals distributed emission from states which are neither fully on nor off and pronounced changes in the excited state decay. The data suggest that a 54?kV/cm applied electric field causes small perturbations to the QD surface charge distribution, effectively increasing the surface trapping probability and resulting in the appearance of gray states. We present simultaneous blinking and fluorescence decay results for two sets of QDs, with and without an applied electric field. Further kinetic modeling analysis suggests that a single trapped charged cannot be responsible for a blinking off event.

  17. Photo-instability of CdSe/ZnS quantum dots in poly(methylmethacrylate) film

    SciTech Connect (OSTI)

    Zhang, Hongyi; Liu, Yu; Ye, Xiaoling; Chen, Yonghai

    2013-12-28

    The photo-instability of CdSe/ZnS quantum dots (QDs) has been studied under varied conditions. We discussed the main features of the evolution of photoluminescence (PL) intensity and energy at different laser powers, which showed critical dependences on the environment. The PL red shift in a vacuum showed strong temperature dependence, from which we concluded that the thermal activation energy for trapping states of the charge carriers was about 14.7 meV. Furthermore, the PL spectra showed asymmetric evolution during the laser irradiation, for which two possible explanations were discussed. Those results provided a comprehensive picture for the photo-instability of the colloidal QDs under different conditions.

  18. Composite materials with metal oxide attached to lead chalcogenide nanocrystal quantum dots with linkers

    DOE Patents [OSTI]

    Fuke, Nobuhiro; Koposov, Alexey Y; Sykora, Milan; Hoch, Laura

    2014-12-16

    Composite materials useful for devices such as photoelectrochemical solar cells include a substrate, a metal oxide film on the substrate, nanocrystalline quantum dots (NQDs) of lead sulfide, lead selenide, and lead telluride, and linkers that attach the NQDs to the metal oxide film. Suitable linkers preserve the 1s absorption peak of the NQDs. A suitable linker has a general structure A-B-C where A is a chemical group adapted for binding to a MO.sub.x and C is a chemical group adapted for binding to a NQD and B is a divalent, rigid, or semi-rigid organic spacer moiety. Other linkers that preserve the 1s absorption peak may also be used.

  19. Strongly modified four-wave mixing in a coupled semiconductor quantum dot-metal nanoparticle system

    SciTech Connect (OSTI)

    Paspalakis, Emmanuel; Evangelou, Sofia; Kosionis, Spyridon G.; Terzis, Andreas F.

    2014-02-28

    We study the four-wave mixing effect in a coupled semiconductor quantum dot-spherical metal nanoparticle structure. Depending on the values of the pump field intensity and frequency, we find that there is a critical distance that changes the form of the spectrum. Above this distance, the four-wave mixing spectrum shows an ordinary three-peaked form and the effect of controlling its magnitude by changing the interparticle distance can be obtained. Below this critical distance, the four-wave mixing spectrum becomes single-peaked; and as the interparticle distance decreases, the spectrum is strongly suppressed. The behavior of the system is explained using the effective Rabi frequency that creates plasmonic metaresonances in the hybrid structure. In addition, the behavior of the effective Rabi frequency is explained via an analytical solution of the density matrix equations.

  20. Effect of geometry and composition on the intraband transitions of holes in quantum dots

    SciTech Connect (OSTI)

    Singh, Satish Kumar Kumar, Jitendra

    2014-12-28

    The effect of shape and size anisotropy on unipolar intraband transitions of holes in quantum dots (QDs) is studied. The optical matrix elements are calculated for transitions of holes in valence band. To get the optical matrix elements, energy eigenvalues and eigenvectors are calculated using 4?×?4 Luttinger Hamiltonian in the effective mass approximation. The formulation is applied to InGaAs/GaAs QD with parabolic confinement potential in xy-plane. The optical matrix elements for intraband hole transitions are calculated for x and y polarised light. The transitions are considered from ground state to other excited states. The effect of In concentration on optical matrix elements is also investigated. It is important to note that the transitions of holes are governed by the character of initial and final states for different light polarisations that give specific transition selection rules. It is found that the polarisation is strongly dependent on the in-plane anisotropy of the QDs.

  1. Wavelength-tunable colloidal quantum dot laser on ultra-thin flexible glass

    SciTech Connect (OSTI)

    Foucher, C.; Guilhabert, B.; Laurand, N.; Dawson, M. D. [Institute of Photonics, SUPA, University of Strathclyde, Glasgow (United Kingdom)

    2014-04-07

    A mechanically flexible and wavelength-tunable laser with an ultra-thin glass membrane as substrate is demonstrated. The optically pumped hybrid device has a distributed feedback cavity that combines a colloidal quantum dot gain film with a grating-patterned polymeric underlayer, all on a 30-?m thick glass sheet. The total thickness of the structure is only 75??m. The hybrid laser has an average threshold fluence of 450?±?80??J/cm{sup 2} (for 5-ns excitation pulses) at an emitting wavelength of 607?nm. Mechanically bending the thin-glass substrate enables continuous tuning of the laser emission wavelength over an 18-nm range, from 600?nm to 618?nm. The correlation between the wavelength tunability and the mechanical properties of the thin laser structure is verified theoretically and experimentally.

  2. Ge{sub 1-x}Mn{sub x} heteroepitaxial quantum dots: Growth, morphology, and magnetism

    SciTech Connect (OSTI)

    Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jamet, M. [Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)

    2013-02-21

    Heteroepitaxial Ge{sub 1-x}Mn{sub x} quantum dots (QDs) were grown on Si (001) by molecular beam epitaxial co-deposition, with x = 0 to 0.10, in order to explore the interaction between Mn content, surface morphological evolution, and magnetism. Morphological evolution typical of the Ge/Si (001) system was observed, where the effect of Mn on surface morphology is surprisingly minimal at low Mn content, with no obvious surface morphological indicators of second phase formation. As the Mn content increases, secondary phase formation becomes evident, appearing to heterogeneously nucleate on or within Ge QDs. Still higher Mn concentrations lead to extensive second phase formation interspersed with an array of Ge QDs. Although ferromagnetism up to 220 K is observed, likely arising from intermetallic precipitates, there is no clear evidence for room-temperature ferromagnetism associated with a dilute magnetic solution phase.

  3. Spin polarized current from multiply-coupled rings with Zeeman-split quantum dots

    SciTech Connect (OSTI)

    Hedin, Eric R.; Joe, Yong S.

    2014-03-21

    We investigate transmission resonances and conductance properties of multiple, serially connected, direct-contact nanoscale rings using the tight-binding model. Quantum dots (QDs) are embedded in the two arms of each ring, and Zeeman-splitting of the QD energy levels is incorporated into the system Hamiltonian. Transmission bands develop as the number of rings in series increases, with a band-gap which is sensitive to the degree of Zeeman splitting and the initial settings of the QD site energy values. The current vs. voltage characteristics of the system can be modulated between Ohmic and semiconducting as a function of the Zeeman splitting. In addition, spin-polarized current results for selected ranges of the Fermi energy.

  4. InAs quantum dot morphology after capping with In, N, Sb alloyed thin films

    SciTech Connect (OSTI)

    Keizer, J. G.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven (Netherlands); Ulloa, J. M.; Utrilla, A. D. [Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2014-02-03

    Using a thin capping layer to engineer the structural and optical properties of InAs/GaAs quantum dots (QDs) has become common practice in the last decade. Traditionally, the main parameter considered has been the strain in the QD/capping layer system. With the advent of more exotic alloys, it has become clear that other mechanisms significantly alter the QD size and shape as well. Larger bond strengths, surfactants, and phase separation are known to act on QD properties but are far from being fully understood. In this study, we investigate at the atomic scale the influence of these effects on the morphology of capped QDs with cross-sectional scanning tunneling microscopy. A broad range of capping materials (InGaAs, GaAsSb, GaAsN, InGaAsN, and GaAsSbN) are compared. The QD morphology is related to photoluminescence characteristics.

  5. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Giddings, A. D.; Prosa, T. J.; Larson, D. J. [CAMECA Instruments, Inc., 5500 Nobel Drive, Madison, Wisconsin 53711 (United States); Mano, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  6. Optical nonlinearity for few-photon pulses on a quantum dot-pillar cavity device

    E-Print Network [OSTI]

    Vivien Loo; Christophe Arnold; Olivier Gazzano; Aristide Lemaitre; Isabelle Sagnes; Olivier Krebs; Paul Voisin; Pascale Senellart; Loïc Lanco

    2012-08-03

    Giant optical nonlinearity is observed under both continuous-wave and pulsed excitation in a deterministically-coupled quantum dot-micropillar system, in a pronounced strong-coupling regime. Using absolute reflectivity measurements we determine the critical intracavity photon number as well as the input and output coupling efficiencies of the device. Thanks to a near-unity input-coupling efficiency, we demonstrate a record nonlinearity threshold of only 8 incident photons per pulse. The output-coupling efficiency is found to strongly influence this nonlinearity threshold. We show how the fundamental limit of single-photon nonlinearity can be attained in realistic devices, which would provide an effective interaction between two coincident single photons.

  7. Kondo effect in double quantum dots with interdot repulsion J. Mravlje,1 A. Ramsak,2,1 and T. Rejec1,2,3

    E-Print Network [OSTI]

    Ramsak, Anton

    behavior.27­31 Here n1,n2 corresponds to occupancies n1 and n2 of the two dots. The simultaneous presence,21 Similar behavior was also found in particular regimes of a triple quantum dot system.22 Here we focus

  8. VOLUME 87, NUMBER 25 P H Y S I C A L R E V I E W L E T T E R S 17 DECEMBER 2001 Coherent Coupling of Two Quantum Dots Embedded in an Aharonov-Bohm Interferometer

    E-Print Network [OSTI]

    Ludwig-Maximilians-Universität, München

    of Two Quantum Dots Embedded in an Aharonov-Bohm Interferometer A. W. Holleitner,1,* C. R. Decker,1 H quantum dots. In an intermediate coupling regime we study molecular states of the double dot and extract focus on coherently coupled states within the double quantum dot, first evidence of which has been found

  9. Low-density InP-based quantum dots emitting around the 1.5??m telecom wavelength range

    SciTech Connect (OSTI)

    Yacob, M.; Reithmaier, J. P.; Benyoucef, M.

    2014-01-13

    The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces lattice matched to InP using post-growth annealing by solid-source molecular beam epitaxy. Clearly spatially separated QDs with a dot density of about 5?×?10{sup 8} cm{sup ?2} are obtained by using a special capping technique after the dot formation process. High-resolution micro-photoluminescence performed on optimized QD structures grown on distributed Bragg reflector exhibits single QD emissions around 1.5??m with narrow excitonic linewidth below 50??eV, which can be used as single photon source in the telecom wavelength range.

  10. Nanotechnology for Solar-hydrogen Production via Photoelectrochemical Water-splitting: Design, Synthesis, Characterization, and Application of Nanomaterials and Quantum Dots 

    E-Print Network [OSTI]

    Alenzi, Naser D.

    2012-02-14

    vapor deposition, template-based fabrication (porous anodic aluminium oxide membrane), drop casting, dip coating, wet coating were used to synthesize and fabricate the nanomaterials and quantum dots.Both bottom-up and top-down synthesis techniques...

  11. Entanglement generation in a system of two atomic quantum dots coupled to a pool of interacting bosons

    E-Print Network [OSTI]

    Anna Posazhennikova; Reinhard Birmuske; Martin Bruderer; Wolfgang Belzig

    2012-12-12

    We discuss entanglement generation in a closed system of one or two atomic quantum dots (qubits) coupled via Raman transitions to a pool of cold interacting bosons. The system exhibits rich entanglement dynamics, which we analyze in detail in an exact quantum mechanical treatment of the problem. The bipartite setup of only one atomic quantum dot coupled to a pool of bosons turns out to be equivalent to two qubits which easily get entangled being initially in a product state. We show that both the number of bosons in the pool and the boson-boson interaction crucially affect the entanglement characteristics of the system. The tripartite system of two atomic quantum dots and a pool of bosons reduces to a qubit-qutrit-qubit realization. We consider entanglement possibilities of the pure system as well as of reduced ones by tracing out one of the constituents, and show how the entanglement can be controlled by varying system parameters. We demonstrate that the qutrit, as expected, plays a leading role in entangling of the two qubits and the maximum entanglement depends in a nontrivial way on the pool characteristics.

  12. Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

    SciTech Connect (OSTI)

    Ziouche, K. E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Bougrioua, Z. E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Lejeune, P.; Lasri, T.; Leclercq, D.; Savelli, G.; Hauser, D.; Michon, P.-M.

    2014-07-28

    This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (?SIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a factor up to 10 compared to the one of standard polysilicon layers that are usually used for IR sensor applications. A presentation of several TE layers, QDSL and polysilicon, is given before to describe the fabrication of the thermopile-based sensors. The theoretical values of the sensitivity to irradiance of ?SIR can be predicted thanks to an analytical model. These findings are used to interpret the experimental measurements versus the nature of the TE layer exploited in the devices. The use of nanostructured QDSL as the main material in ?SIR thermopile has brought a sensitivity improvement of about 28% consistent with theoretical predictions. The impact of QDSL low thermal conductivity is damped by the contribution of the thermal conductivity of all the other sub-layers that build up the device.

  13. Photophysics of (CdSe)ZnS Colloidal Quantum Dots in an Aqueous Environment Stabilized with Amino Acids and Genetically-Modified Proteins

    SciTech Connect (OSTI)

    Ai, X.; Xu, Q.; Jones, M.; Song, Q.; Ding, S.-Y.; Ellingson, R. J.; Himmel, M.; Rumbles, G.

    2007-01-01

    Using a combination of two amino acids, histidine and N-acetyl-cysteine, to replace the original organic capping groups of (CdSe)ZnS quantum dots, water-soluble and highly luminescent (CdSe)ZnS quantum dots have been successfully prepared at pH 8. Characterization by steady-state and time-resolved photoluminescence spectroscopy, and transient absorption spectroscopy, demonstrate that the electronic properties of these quantum dots exceed those of the original as-synthesized samples dissolved in a more-conventional organic solvent. Furthermore, these amino acid-stabilized quantum dots have been assembled onto a cellulose substrate via cellulose binding proteins that specifically bind to cellulose and was genetically engineered to harbor dual hexahistidine tags at the N- and C-termini to confer binding with the zinc(II) on the quantum dot surface. The spectroscopic measurements show that the protein-bound quantum dots continue to retain their desirable electronic properties when bound on the substrate. Meanwhile, the specific and very selective binding properties of the proteins have remained effective. (1)Select optimal greenhouse gas (GHG) and petroleum reduction strategies for each fleet location, (2)Meet or exceed Federal fleet GHG and petroleum reduction requirements outlined in the Guidance, (3)Acquire vehicles to support these strategies while minimizing fleet size and vehicle miles traveled (VMT), (4)Refine strategies based on agency performance.

  14. Ordering mechanism of stacked CdSe/ZnS{sub x}Se{sub 1-x} quantum dots: A combined reciprocal-space and real-space approach

    SciTech Connect (OSTI)

    Schmidt, Th.; Roventa, E.; Clausen, T.; Flege, J. I.; Alexe, G.; Rosenauer, A.; Hommel, D.; Falta, J.; Bernstorff, S.; Kuebel, C.

    2005-11-15

    The vertical and lateral ordering of stacked CdSe quantum dot layers embedded in ZnS{sub x}Se{sub 1-x} has been investigated by means of grazing incidence small angle x-ray scattering and transmission electron microscopy. Different growth parameters have been varied in order to elucidate the mechanisms leading to quantum dot correlation. From the results obtained for different numbers of quantum dot layers, we conclude on a self-organized process which leads to increasing ordering for progressive stacking. The dependence on the spacer layer thickness indicates that strain induced by lattice mismatch drives the ordering process, which starts to break down for too thick spacer layers in a thickness range from 45 to 80 A. Typical quantum dot distances in a range from about 110 to 160 A have been found. A pronounced anisotropy of the quantum dot correlation has been observed, with the strongest ordering along the [110] direction. Since an increased ordering is found with increasing growth temperature, the formation of stacking faults as an additional mechanism for quantum dot alignment can be ruled out.

  15. Electronic and optical properties of single excitons and biexcitons in type-II quantum dot nanocrystals

    SciTech Connect (OSTI)

    Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2014-05-21

    In this study, a detailed investigation of the electronic and optical properties (i.e., binding energies, absorption wavelength, overlap of the electron-hole wave functions, recombination oscillator strength, etc.) of an exciton and a biexciton in CdTe/CdSe core/shell type-II quantum dot heterostructures has been carried out in the frame of the single band effective mass approximation. In order to determine the electronic properties, we have self-consistently solved the Poisson-Schrödinger equations in the Hartree approximation. We have considered all probable Coulomb interaction effects on both energy levels and also on the corresponding wave functions for both single exciton and biexciton. In addition, we have taken into account the quantum mechanical exchange-correlation effects in the local density approximation between same kinds of particles for biexciton. Also, we have examined the effect of the ligands and dielectric mismatch on the electronic and optical properties. We have used a different approximation proposed by Sahin and Koc [Appl. Phys. Lett. 102, 183103 (2013)] for the recombination oscillator strength of the biexciton for bound and unbound cases. The results obtained have been presented comparatively as a function of the shell thicknesses and probable physical reasons in behind of the results have been discussed in a detail.

  16. Optical pulse dynamics for quantum-dot logic operations in a photonic-crystal waveguide

    SciTech Connect (OSTI)

    Ma, Xun; John, Sajeev [Department of Physics, University of Toronto, Toronto, Ontario, M5S 1A7 Canada (Canada)

    2011-11-15

    We numerically demonstrate all-optical logic operations with quantum dots (QDs) embedded in a bimodal photonic-crystal waveguide using Maxwell-Bloch equations in a slowly varying envelope approximation (SVEA). The two-level QD excitation level is controlled by one or more femtojoule optical driving pulses passing through the waveguide. Specific logic operations depend on the relative pulse strengths and their detunings from an inhomogeneouslly broadened (about 1% for QD transitions centered at 1.5 {mu}m) QD transition. This excitation controlled two-level medium then determines passage of subsequent probe optical pulses. Envelope equations for electromagnetic waves in the linear dispersion and cutoff waveguide modes are derived to simplify solution of the coupled Maxwell-Bloch equations in the waveguide. These determine the quantum mechanical evolution of the QD excitation and its polarization, driven by classical electromagnetic (EM) pulses near a sharp discontinuity in the EM density of states of the bimodal waveguide. Different configurations of the driving pulses lead to distinctive relations between driving pulse strength and probe pulse passage, representing all-optical logic and, or, and not operations. Simulation results demonstrate that such operations can be done on picosecond time scales and within a waveguide length of about 10 {mu}m in a photonic-band-gap (PBG) optical microchip.

  17. Experimental demonstration of a latch in clocked quantum-dot cellular automata

    E-Print Network [OSTI]

    Orlov, Alexei

    by capacitively coupled gates. The middle dot acts as an adjustable barrier to control single-electron tunneling to one of the end dots depending on the input.8 Finally, when the clock is high, the electron is trapped floating micron-size metal dots, connected in series by multiple tunnel junctions and controlled

  18. InAs quantum dot growth on Al{sub x}Ga{sub 1?x}As by metalorganic vapor phase epitaxy for intermediate band solar cells

    SciTech Connect (OSTI)

    Jakomin, R.; Kawabata, R. M. S.; Souza, P. L.; Mourão, R. T.; Pires, M. P.; Micha, D. N.

    2014-09-07

    InAs quantum dot multilayers have been grown using Al{sub x}Ga{sub 1?x}As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x?=?0.3 and InAs dot vertical dimensions of 5?nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

  19. Frequency stabilization of the zero-phonon line of a quantum dot via phonon-assisted active feedback

    SciTech Connect (OSTI)

    Hansom, Jack; Schulte, Carsten H. H.; Matthiesen, Clemens; Stanley, Megan J.; Atatüre, Mete

    2014-10-27

    We report on the feedback stabilization of the zero-phonon emission frequency of a single InAs quantum dot. The spectral separation of the phonon-assisted component of the resonance fluorescence provides a probe of the detuning between the zero-phonon transition and the resonant driving laser. Using this probe in combination with active feedback, we stabilize the zero-phonon transition frequency against environmental fluctuations. This protocol reduces the zero-phonon fluorescence intensity noise by a factor of 22 by correcting for environmental noise with a bandwidth of 191?Hz, limited by the experimental collection efficiency. The associated sub-Hz fluctuations in the zero-phonon central frequency are reduced by a factor of 7. This technique provides a means of stabilizing the quantum dot emission frequency without requiring access to the zero-phonon emission.

  20. Ultrafast single-electron transfer in coupled quantum dots driven by a few-cycle chirped pulse

    SciTech Connect (OSTI)

    Yang, Wen-Xing, E-mail: wenxingyang2@126.com [Department of Physics, Southeast University, Nanjing 210096 (China); Institute of Photonics Technologies, National Tsing-Hua University, Hsinchu 300, Taiwan (China); Chen, Ai-Xi [Department of Applied Physics, School of Basic Science, East China Jiaotong University, Nanchang 330013 (China); Bai, Yanfeng [Department of Physics, Southeast University, Nanjing 210096 (China); Lee, Ray-Kuang [Institute of Photonics Technologies, National Tsing-Hua University, Hsinchu 300, Taiwan (China)

    2014-04-14

    We theoretically study the ultrafast transfer of a single electron between the ground states of a coupled double quantum dot (QD) structure driven by a nonlinear chirped few-cycle laser pulse. A time-dependent Schrödinger equation without the rotating wave approximation is solved numerically. We demonstrate numerically the possibility to have a complete transfer of a single electron by choosing appropriate values of chirped rate parameters and the intensity of the pulse. Even in the presence of the spontaneous emission and dephasing processes of the QD system, high-efficiency coherent transfer of a single electron can be obtained in a wide range of the pulse parameters. Our results illustrate the potential to utilize few-cycle pulses for the excitation in coupled quantum dot systems through the nonlinear chirp parameter control, as well as a guidance in the design of experimental implementation.

  1. CdSe self-assembled quantum dots with ZnCdMgSe barriers emitting throughout the visible spectrum

    SciTech Connect (OSTI)

    Perez-Paz, M. Noemi; Zhou Xuecong; Munoz, Martin; Lu Hong; Sohel, Mohammad; Tamargo, Maria C.; Jean-Mary, Fleumingue; Akins, Daniel L.

    2004-12-27

    Self-assembled quantum dots of CdSe with ZnCdMgSe barriers have been grown by molecular beam epitaxy on InP substrates. The optical and microstructural properties were investigated using photoluminescence (PL) and atomic force microscopy (AFM) measurements. Control and reproducibility of the quantum dot (QD) size leading to light emission throughout the entire visible spectrum range has been obtained by varying the CdSe deposition time. Longer CdSe deposition times result in a redshift of the PL peaks as a consequence of an increase of QD size. AFM studies demonstrate the presence of QDs in uncapped structures. A comparison of this QD system with CdSe/ZnSe shows that not only the strain but also the chemical properties of the system play an important role in QD formation.

  2. Metamorphic approach to single quantum dot emission at 1.55 {mu}m on GaAs substrate

    SciTech Connect (OSTI)

    Semenova, E. S.; Hostein, R.; Patriarche, G.; Mauguin, O.; Largeau, L.; Robert-Philip, I.; Beveratos, A.; Lemaitre, A.

    2008-05-15

    We report on the fabrication and the characterization of InAs quantum dots (QDs) embedded in an indium rich In{sub 0.42}Ga{sub 0.58}As metamorphic matrix grown on a GaAs substrate. Growth conditions were chosen so as to minimize the number of threading dislocations and other defects produced during the plastic relaxation. Sharp and bright lines, originating from the emission of a few isolated single quantum dots, were observed in microphotoluminescence around 1.55 {mu}m at 5 K. They exhibit, in particular, a characteristic exciton/biexciton behavior. These QDs could offer an interesting alternative to other approaches as InAs/InP QDs for the realization of single photon emitters at telecom wavelengths.

  3. Longitudinal and transverse exciton spin relaxation times in single InP/InAsP/InP nanowire quantum dots

    E-Print Network [OSTI]

    Sasakura, H; Dorenbos, S N; Akopian, N; van Kouwen, M P; Motohisa, J; Kobayashi, Y; Kumano, H; Kondo, K; Tomioka, K; Fukui, T; Suemune, I; Zwiller, V

    2011-01-01

    We have investigated the optical properties of a single InAsP quantum dot embedded in a standing InP nanowire. A regular array of nanowires was fabricated by epitaxial growth and electron-beam patterning. The elongation of transverse exciton spin relaxation time of the exciton state with decreasing excitation power was observed by first-order photon correlation measurements. This behavior is well explained by the motional narrowing mechanism induced by Gaussian fluctuations of environmental charges in the InP nanowire. The longitudinal exciton spin relaxation time was evaluated by the degree of the random polarization of emission originating from exciton state confined in a single nanowire quantum dots by using Mueller Calculus based on Stokes parameters representation.

  4. Pseudopotential calculations of electron and hole addition spectra of InAs, InP, and Si quantum dots

    SciTech Connect (OSTI)

    Franceschetti, Alberto; Zunger, Alex

    2000-07-15

    The electron and hole addition energies, the quasiparticle gap, and the optical gap of InAs, InP, and Si quantum dots are calculated using microscopic pseudopotential wave functions. The effects of the dielectric mismatch between the quantum dot and the surrounding material are included using a realistic profile for the dielectric constant {epsilon}(r). We find that the addition energies and the quasiparticle gap depend strongly on the dielectric constant of the environment {epsilon}{sub out}, while the optical gap is rather insensitive to {epsilon}{sub out}. We compare our results with recent tunneling spectroscopy measurements for InAs nanocrystals, finding excellent agreement. Our calculations for the addition energies and the quasiparticle gap of InP and Si nanocrystals serve as predictions for future experiments. (c) 2000 The American Physical Society.

  5. Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing

    SciTech Connect (OSTI)

    Nie, D.; Mei, T.; Xu, C. D.; Dong, J. R.

    2006-09-25

    Inductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600 deg. C for 30 s. The annealing results in a maximum differential band-gap blueshift of 106 nm but a thermal shift of only 10 nm. Band-gap halftones are obtained by controlling the amount of near-surface defects via wet chemical etching on the plasma-exposed InP cap layer. No degradation of quantum-dot crystal quality due to the process has been observed as evidenced by photoluminescence intensity.

  6. Tunable photoluminescence of self-assembled GeSi quantum dots by B{sup +} implantation and rapid thermal annealing

    SciTech Connect (OSTI)

    Chen, Yulu; Wu, Shan; Ma, Yinjie; Fan, Yongliang; Yang, Xinju; Zhong, Zhenyang; Jiang, Zuimin

    2014-06-21

    The layered GeSi quantum dots (QDs) are grown on (001) Si substrate by molecular beam epitaxy. The photoluminescence (PL) peak of the as-grown GeSi quantum dots has obvious blue shift and enhancement after processed by ion implantation and rapid thermal annealing. It is indicated that the blue shift is originated from the interdiffusion of Ge and Si at the interface between QDs and the surrounding matrix. The dependence of PL intensity on the excitation power shows that there are the nonradiative centers of shallow local energy levels from the point defects caused by the ion implantation, but not removed by the rapid thermal annealing. The tunable blue shift of the PL position from the 1300?nm to 1500?nm region may have significant application value in the optical communication.

  7. Energy-Tunable Quantum Dot with Minimal Fine Structure Created by Using Simultaneous Electric and Magnetic Fields

    E-Print Network [OSTI]

    M. A. Pooley; A. J. Bennett; R. M. Stevenson; A. J. Shields; I. Farrer; D. A. Ritchie

    2015-07-28

    The neutral biexciton cascade of single quantum dots is a promising source of entangled photon pairs. The character of the entangled state is determined by the energy difference between the excitonic eigenstates known as fine-structure splitting (FSS). Here we reduce the magnitude of the FSS by simultaneously using two independent tuning mechanisms: in-plane magnetic field and vertical electric field. We observe that there exists a minimum possible FSS in each quantum dot which is independent of these tuning mechanisms. However, with simultaneous application of electric and magnetic fields, we show the FSS can be reduced to its minimum value as the energy of emission is tuned over several meV with a 5-T magnet.

  8. Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

    SciTech Connect (OSTI)

    Cohen, Eyal; Yochelis, Shira; Westreich, Ohad; Shusterman, Sergey; Kumah, Divine P.; Clarke, Roy; Yacoby, Yizhak; Paltiel, Yossi

    2011-09-06

    We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were grown by the droplet heteroepitaxy (DHE) technique and their structural and compositional properties are compared with those of dots grown by the strain-driven Stranski-Krastanov method. Our results show that the Ga diffusion into the DHE-grown dots is somewhat larger; however, other characteristics such as the composition of the dots uppermost layers, the interlayer spacing, and the bowing of the atomic layers are similar.

  9. Ligand Removal from CdS Quantum Dots for Enhanced Photocatalytic H2 Generation in pH Neutral Water

    E-Print Network [OSTI]

    Chang, Christina M.; Orchard, Katherine L.; Martindale, Benjamin C. M.; Reisner, Erwin

    2015-06-19

    .rsc.org/   Ligand  Removal  from  CdS  Quantum  Dots  for  Enhanced  Photocatalytic  H2  Generation  in  pH  Neutral  Water  Christina  M.  Chang,†  Katherine  L.  Orchard,†  Benjamin  C.  M.  Martindale  and...   such   as   the   cobaloxime   CoP  (Figure  1)  and  semiconductor  light  absorbers  such  as  BiVO4  (for  use   in   tandem   with   a   QD   for   full   water   splitting)   display  optimal   activity   around  pH  7...

  10. Enhanced photocatalytic performance of g-C{sub 3}N{sub 4} with BiOCl quantum dots modification

    SciTech Connect (OSTI)

    Zheng, Chun-zhi Zhang, Chun-yong Zhang, Guo-hua Zhao, De-jian Wang, Ya-zhen

    2014-07-01

    Highlights: • Novel BiOCl quantum dots modified g-C{sub 3}N{sub 4} photocatalyst was synthesized. • BiOCl-g-C{sub 3}N{sub 4} showed much higher photocatalytic activity than pure g-C{sub 3}N{sub 4} and BiOCl. • High separation efficiency of photoinduced carriers results in the enhanced performance. - Abstract: Novel BiOCl quantum dots modified g-C{sub 3}N{sub 4} photocatalyst was synthesized by a one-step chemical bath method at low temperature. The photocatalyst was characterized using X-ray diffraction, high-resolution transmission microscopy UV–visible light diffusion reflectance spectrometry, and photoluminescence spectroscopy. The results indicated that BiOCl quantum dots were dispersed on g-C{sub 3}N{sub 4} to form heterojunction structures with high specific surface area. BiOCl-g-C{sub 3}N{sub 4} showed much higher photocatalytic activity than pure g-C{sub 3}N{sub 4} and BiOCl for rhodamine B degradation. The enhanced performance was induced by the high separation efficiency of photoinduced carriers.

  11. Charge state control in single InAs/GaAs quantum dots by external electric and magnetic fields

    SciTech Connect (OSTI)

    Tang, Jing; Cao, Shuo; Gao, Yunan; Sun, Yue; Jin, Kuijuan; Xu, Xiulai; Geng, Weidong; Williams, David A.

    2014-07-28

    We report a photoluminescence (PL) spectroscopy study of charge state control in single self-assembled InAs/GaAs quantum dots by applying electric and/or magnetic fields at 4.2?K. Neutral and charged exciton complexes were observed under applied bias voltages from ?0.5?V to 0.5?V by controlling the carrier tunneling. The highly negatively charged exciton emission becomes stronger with increasing pumping power, arising from the fact that electrons have a smaller effective mass than holes and are more easily captured by the quantum dots. The integrated PL intensity of negatively charged excitons is affected significantly by a magnetic field applied along the sample growth axis. This observation is explained by a reduction in the electron drift velocity caused by an applied magnetic field, which increases the probability of non-resonantly excited electrons being trapped by localized potentials at the wetting layer interface, and results in fewer electrons distributed in the quantum dots. The hole drift velocity is also affected by the magnetic field, but it is much weaker.

  12. Proposal for efficient mode converter based on cavity quantum electrodynamics dark mode in a semiconductor quantum dot coupled to a bimodal microcavity

    SciTech Connect (OSTI)

    Li, Jiahua [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Fundamental Physical Quantities Measurement of Ministry of Education, Wuhan 430074 (China); Yu, Rong, E-mail: yurong321@126.com [School of Science, Hubei Province Key Laboratory of Intelligent Robot, Wuhan Institute of Technology, Wuhan 430073 (China); Ma, Jinyong; Wu, Ying, E-mail: yingwu2@163.com [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2014-10-28

    The ability to engineer and convert photons between different modes in a solid-state approach has extensive technological implications not only for classical communication systems but also for future quantum networks. In this paper, we put forward a scheme for coherent mode conversion of optical photons by utilizing the intermediate coupling between a single quantum dot and a bimodal photonic crystal microcavity via a waveguide. Here, one mode of the photonic crystal microcavity is coherently driven by an external single-frequency continuous-wave laser field and the two cavity modes are not coupled to each other due to their orthogonal polarizations. The undriven cavity mode is thus not directly coupled to the input driving laser and the only way it can get light is via the quantum dot. The influences of the system parameters on the photon-conversion efficiency are analyzed in detail in the limit of weak probe field and it is found that high photon-conversion efficiency can be achieved under appropriate conditions. It is shown that the cavity dark mode, which is a superposition of the two optical modes and is decoupled from the quantum dot, can appear in such a hybrid optical system. We discuss the properties of the dark mode and indicate that the formation of the dark mode enables the efficient transfer of optical fields between the two cavity modes.

  13. Synthesis of cadmium telluride quantum wires and the similarity of their band gaps to those of equidiameter cadmium telluride quantum dots

    SciTech Connect (OSTI)

    Wang, Lin-Wang; Sun, Jianwei; Wang, Lin-Wang; Buhro, William E.

    2008-07-11

    High-quality colloidal CdTe quantum wires having purposefully controlled diameters in the range of 5-11 nm are grown by the solution-liquid-solid (SLS) method, using Bi-nanoparticle catalysts, cadmium octadecylphosphonate and trioctylphosphine telluride as precursors, and a TOPO solvent. The wires adopt the wurtzite structure, and grow along the [002] direction (parallel to the c axis). The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to the experimental results for high-quality CdTe quantum dots. In contrast to the predictions of an effective-mass approximation, particle-in-a-box model, and previous experimental results from CdSe and InP dot-wire comparisons, the band gaps of CdTe dots and wires of like diameter are found to be experimentally indistinguishable. The present results are analyzed using density functional theory under the local-density approximation by implementing a charge-patching method. The higher-level theoretical analysis finds the general existence of a threshold diameter, above which dot and wire band gaps converge. The origin and magnitude of this threshold diameter is discussed.

  14. High-performance deep ultraviolet photodetectors based on ZnO quantum dot assemblies

    SciTech Connect (OSTI)

    Xu, Xiaoyong; Xu, Chunxiang E-mail: jghu@yzu.edu.cn; Hu, Jingguo E-mail: jghu@yzu.edu.cn

    2014-09-14

    A high-performance ZnO quantum dots (QDs)-based ultraviolet (UV) photodetector has been successfully fabricated via the self-assembly of QDs on the Au interdigital electrode. The broadened band gap in ZnO QDs makes the device has the highly selective response for the deep UV detection. The unique QD-QD junction barriers similar to back-to-back Schottky barriers dominate the conductance of the QD network and the UV light-induced barrier-height modulation plays a crucial role in enhancing the photoresponsivity and the response speed. Typically, the as-fabricated device exhibits the fast response and recovery times of within 1 s, the deep UV selectivity of less than 340 nm, and the stable repeatability with on/off current ratio over 10³, photoresponsivity of 5.04×10²A/W, and photocurrent gain of 1.9×10³, demonstrating that the ZnO QD network is a superior building block for deep UV photodetectors.

  15. Heat generation by electronic current in a quantum dot spin-valve

    SciTech Connect (OSTI)

    Chi, Feng; Sun, Lian-Liang; Guo, Yu

    2014-10-28

    Electric-current-induced heat generation in an interacting single-level quantum dot connected to ferromagnetic leads with noncollinear magnetizations is theoretically investigated. We find that when the two leads' spin polarization rates are identical and much smaller than unit, the magnitude of the heat generation is almost monotonously enhanced as the angle between the leads' magnetic moments is varied from zero to ?, while the magnitude of the electric current is continuously suppressed. Moreover, the properties of the heat generation depend on the lead's spin polarization rate in different ways when the angle is varied. If at least one of the leads' spin polarization rate approaches to unit, the spin-valve effect of the heat generation is identical to that of the electric current. Now the previously found negative differential of the heat generation disappears when the angle approaches to ?. As compared to the current, the heat generation is more sensitive to the system's asymmetry when one of the electrodes is half-metallic in noncollinear configurations.

  16. Cytotoxicity of InP/ZnS quantum dots related to reactive oxygen species generation.

    SciTech Connect (OSTI)

    Chibli, H.; Carlini, L.; Park, S.; Dimitrijevic, N. M.; Nadeau, J. L.

    2011-01-01

    Indium phosphide (InP) quantum dots (QDs) have emerged as a presumably less hazardous alternative to cadmium-based particles, but their cytotoxicity has not been well examined. Although their constituent elements are of very low toxicity to cells in culture, they nonetheless exhibit phototoxicity related to generation of reactive oxygen species by excited electrons and/or holes interacting with water and molecular oxygen. Using spin-trap electron paramagnetic resonance (EPR) spectroscopy and reporter assays, we find a considerable amount of superoxide and a small amount of hydroxyl radical formed under visible illumination of biocompatible InP QDs with a single ZnS shell, comparable to what is seen with CdTe. A double thickness shell reduces the reactive oxygen species concentration approximately two-fold. Survival assays in five cell lines correspondingly indicate a distinct reduction in toxicity with the double-shell InP QDs. Toxicity varies significantly across cell lines according to the efficiency of uptake, being overall significantly less than what is seen with CdTe or CdSe/ZnS. This indicates that InP QDs are a useful alternative to cadmium-containing QDs, while remaining capable of electron-transfer processes that may be undesirable or which may be exploited for photosensitization applications.

  17. Electron-correlation driven capture and release in double quantum dots

    E-Print Network [OSTI]

    Federico M. Pont; Annika Bande; Lorenz S. Cederbaum

    2014-12-29

    We recently predicted that the interatomic Coulombic electron capture (ICEC) process, a long-range electron correlation driven capture process, is achievable in gated double quantum dots (DQDs) [F. M. Pont, A. Bande, L. S. Cederbaum, Phys. Rev. B {\\bf 88} 241304(R)(2013)]. In ICEC an incoming electron is captured by one QD and the excess energy is used to remove an electron from the neighboring QD. In this work we present systematic full three-dimensional electron dynamics calculations in quasi-one dimensional model potentials that allow for a detailed understanding of the connection between the DQD geometry and the reaction probability for the ICEC process. Investigation of the electronic structure of various DQD geometries that are capable of undergoing the ICEC process clarify the offspring of its remarkably high probability in the presence of two electron resonances. The quasi-one dimensional geometry allows to construct an effective one-dimensional model whose results compare very well with those obtained using the full calculations.

  18. Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    SciTech Connect (OSTI)

    Lu, Q.; Zhuang, Q.; Hayton, J.; Yin, M.; Krier, A.

    2014-07-21

    There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1??m have been demonstrated and characterized. The gain was determined to be 2.9?cm{sup ?1} per QD layer, and the waveguide loss was ?15?cm{sup ?1} at 4?K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T{sub 0}?=?101?K below 50?K, but decreased to 48?K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs{sub 0.61}Sb{sub 0.13}P{sub 0.26} lower cladding layer and an upper n{sup +} InAs plasmon cladding layer which resulted in a maximum operating temperature (T{sub max}) of 120?K in pulsed mode, which is the highest reported to date.

  19. ThermoElectric Transport Properties of a Chain of Quantum Dots with Self-Consistent Reservoirs

    E-Print Network [OSTI]

    Philippe A. Jacquet

    2009-02-13

    We introduce a model for charge and heat transport based on the Landauer-Buttiker scattering approach. The system consists of a chain of $N$ quantum dots, each of them being coupled to a particle reservoir. Additionally, the left and right ends of the chain are coupled to two particle reservoirs. All these reservoirs are independent and can be described by any of the standard physical distributions: Maxwell-Boltzmann, Fermi-Dirac and Bose-Einstein. In the linear response regime, and under some assumptions, we first describe the general transport properties of the system. Then we impose the self-consistency condition, i.e. we fix the boundary values (T_L,\\mu_L) and (T_R,mu_R), and adjust the parameters (T_i,mu_i), for i = 1,...,N, so that the net average electric and heat currents into all the intermediate reservoirs vanish. This condition leads to expressions for the temperature and chemical potential profiles along the system, which turn out to be independent of the distribution describing the reservoirs. We also determine the average electric and heat currents flowing through the system and present some numerical results, using random matrix theory, showing that these currents are typically governed by Ohm and Fourier laws.

  20. Giant Nanocrystal Quantum Dots as Stable and Efficient Down-Conversion

    Office of Scientific and Technical Information (OSTI)

    Dots as Stable and Efficient Down-Conversion Phosphor for LED based Solid State Lighting Kundu, Janardan Los Alamos National Laboratory; Ghosh, Yagnaseni Los Alamos...

  1. Bio-distribution and metabolic paths of silica coated CdSeS quantum dots

    SciTech Connect (OSTI)

    Chen Zhen; Chen Hu; Meng Huan; Xing Gengmei Gao Xueyun; Sun Baoyun; Shi Xiaoli; Yuan Hui; Zhang Chengcheng; Liu Ru; Zhao Feng

    2008-08-01

    With the rapid development of quantum dot (QD) technology, water-soluble QDs have the prospect of being used as a biological probe for specific diagnoses, but their biological behaviors in vivo are little known. Our recent in vivo studies concentrated on the bio-kinetics of QDs coated by hydroxyl group modified silica networks (the QDs are 21.3 {+-} 2.0 nm in diameter and have maximal emission at 570 nm). Male ICR mice were intravenously given the water-soluble QDs with a single dose of 5 nmol/mouse. Inductively coupled plasma-mass spectrometry was used to measure the {sup 111}Cd content to indicate the concentration of QDs in plasma, organs, and excretion samples collected at predetermined time intervals. Meanwhile, the distribution and aggregation state of QDs in tissues were also investigated by pathological examination and differential centrifugation. The plasma half-life and clearance of QDs were 19.8 {+-} 3.2 h and 57.3 {+-} 9.2 ml/h/kg, respectively. The liver and kidney were the main target organs for QDs. The QDs metabolized in three paths depending on their distinct aggregated states in vivo. A fraction of free QDs, maintaining their original form, could be filtered by glomerular capillaries and excreted via urine as small molecules within five days. Most QDs bound to protein and aggregated into larger particles that were metabolized in the liver and excreted via feces in vivo. After five days, 8.6% of the injected dose of aggregated QDs still remained in hepatic tissue and it was difficult for this fraction to clear.

  2. Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning

    SciTech Connect (OSTI)

    Petz, C. W.; Floro, J. A.; Yang, D.; Levy, J.

    2012-04-02

    Artificially ordered quantum dot (QD) arrays, where confined carriers can interact via direct exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in ultra-high vacuum (UHV), forming ordered arrays of nanoscale SiC precipitates that have been suggested to template subsequent epitaxial Ge growth to form ordered QD arrays. We show that 3C-SiC nanodots form, in cube-on-cube epitaxial registry with the Si substrate. The SiC nanodots are fully relaxed by misfit dislocations and exhibit small lattice rotations with respect to the substrate. Ge overgrowth at elevated deposition temperatures, followed by Si capping, results in expulsion of the Ge from SiC template sites due to the large chemical and lattice mismatch between Ge and C. Maintaining an epitaxial, low-defectivity Si matrix around the quantum dots is important for creating reproducible electronic and spintronic coupling of states localized at the QDs.

  3. Raman scattering as a tool for the evaluation of strain in GaN/AlN quantum dots: The effect of capping

    SciTech Connect (OSTI)

    Cros, A.; Cantarero, A.; Garro, N.; Coraux, J.; Daudin, B.

    2007-10-15

    The strain state of GaN/AlN quantum dots grown on 6H-SiC has been investigated as a function of AlN capping thickness by three different techniques. On the one hand, resonant Raman scattering allowed the detection of the A{sub 1}(LO) quasiconfined mode. It was found that its frequency increases with AlN deposition, while its linewidth did not evolve significantly. Available experiments of multiwavelength anomalous diffraction and diffraction anomalous fine structure on the same samples provided the determination of the wurtzite lattice parameters a and c of the quantum dots. A very good agreement is found between resonant Raman scattering and x-ray measurements, especially concerning the in-plane strain state. The results demonstrate the adequacy of Raman scattering, in combination with the deformation potential and biaxial approximations, to determine quantitatively values of strain in GaN quantum dot layers.

  4. Can Quantum Entanglement Detection Schemes Improve Search?

    E-Print Network [OSTI]

    Luís Tarrataca; Andreas Wichert

    2015-02-06

    Quantum computation, in particular Grover's algorithm, has aroused a great deal of interest since it allows for a quadratic speedup to be obtained in search procedures. Classical search procedures for an $N$ element database require at most $O(N)$ time complexity. Grover's algorithm is able to find a solution with high probability in $O(\\sqrt{N})$ time through an amplitude amplification scheme. In this work we draw elements from both classical and quantum computation to develop an alternative search proposal based on quantum entanglement detection schemes. In 2002, Horodecki and Ekert proposed an efficient method for direct detection of quantum entanglement. Our proposition to quantum search combines quantum entanglement detection alongside entanglement inducing operators. Grover's quantum search relies on measuring a quantum superposition after having applied a unitary evolution. We deviate from the standard method by focusing on fine-tuning a unitary operator in order to infer the solution with certainty. Our proposal sacrifices space for speed and depends on the mathematical properties of linear positive maps $\\Lambda$ which have not been operationally characterized. Whether such a $\\Lambda$ can be easily determined remains an open question.

  5. Self-organized arrays of graphene and few-layer graphene quantum dots in fluorographene matrix: Charge transient spectroscopy

    SciTech Connect (OSTI)

    Antonova, Irina V., E-mail: antonova@isp.nsc.ru [Rzhanov Institute of Semiconductor Physics, SB RAS, Lavrentiev Avenue 13, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Pirogov st. 2, Novosibirsk 630090 (Russian Federation); Nebogatikova, Nadezhda A.; Prinz, Victor Ya. [Rzhanov Institute of Semiconductor Physics, SB RAS, Lavrentiev Avenue 13, Novosibirsk 630090 (Russian Federation)

    2014-05-12

    Arrays of graphene or few-layer graphene quantum dots (QDs) embedded in a partially fluorinated graphene matrix were created by chemical functionalization of layers. Charge transient spectroscopy employed for investigation of obtained QD systems (size 20–70 nm) has allowed us to examine the QD energy spectra and the time of carrier emission (or charge relaxation) from QDs as a function of film thickness. It was found that the characteristic time of carrier emission from QDs decreased markedly (by about four orders of magnitude) on increasing the QD thickness from one graphene monolayer to 3 nm. Daylight-assisted measurements also demonstrate a strong decrease of the carrier emission time.

  6. Hyperfine-induced hysteretic funnel structure in spin blockaded tunneling current of coupled vertical quantum dots at low magnetic field

    SciTech Connect (OSTI)

    Leary, A.; Wicha, A.; Harack, B.; Coish, W. A.; Hilke, M.; Yu, G.; Gupta, J. A.; Payette, C.; Austing, D. G.

    2013-12-04

    We outline the properties of the hyperfine-induced funnel structure observed in the two-electron spin blockade region of a weakly coupled vertical double quantum dot device. Hysteretic steps in the leakage current occur due to dynamic nuclear polarization when either the bias voltage or the magnetic field is swept up and down. When the bias voltage is swept, an intriguing ?3 mT wide cusp near 0 T appears in the down-sweep position, and when the magnetic field is swept, the current at 0 T can be switched from 'low' to 'high' as the bias is increased.

  7. Room temperature spontaneous emission enhancement from quantum dots in photonic crystal slab cavities in the telecommunications C-band

    E-Print Network [OSTI]

    Hostein, Richard; Larqué, Matthieu; Lee, Ko-Hsin; Talneau, Anne; Gratiet, Luc Le; Robert-Philip, Isabelle; Sagnes, Isabelle; Beveratos, Alexios; 10.1063/1.3104855

    2009-01-01

    We report on the control of the spontaneous emission dynamics from InAsP self-assembled quantum dots emitting in the telecommunications C-band and weakly coupled to the mode of a double heterostructure cavity etched on a suspended InP membrane at room temperature. The quality factor of the cavity mode is 44x10^3 with an ultra-low modal volume of the order of 1.2 lambda/n)^3, inducing an enhancement of the spontaneous emission rate of up a factor of 2.8 at 300 K.

  8. Room temperature spontaneous emission enhancement from quantum dots in photonic crystal slab cavities in the telecommunications C-band

    E-Print Network [OSTI]

    Richard Hostein; Rémy Braive; Matthieu Larqué; Ko-Hsin Lee; Anne Talneau; Luc Le Gratiet; Isabelle Robert-Philip; Isabelle Sagnes; Alexios Beveratos

    2009-03-25

    We report on the control of the spontaneous emission dynamics from InAsP self-assembled quantum dots emitting in the telecommunications C-band and weakly coupled to the mode of a double heterostructure cavity etched on a suspended InP membrane at room temperature. The quality factor of the cavity mode is 44x10^3 with an ultra-low modal volume of the order of 1.2 lambda/n)^3, inducing an enhancement of the spontaneous emission rate of up a factor of 2.8 at 300 K.

  9. Bound state energies and wave functions of spherical quantum dots in presence of a confining potential model

    E-Print Network [OSTI]

    Sameer M. Ikhdair

    2011-10-03

    We obtain the exact energy spectra and corresponding wave functions of the radial Schr\\"odinger equation (RSE) for any (n,l) state in the presence of a combination of psudoharmonic, Coulomb and linear confining potential terms using an exact analytical iteration method. The interaction potential model under consideration is Cornell-modified plus harmonic (CMpH) type which is a correction form to the harmonic, Coulomb and linear confining potential terms. It is used to investigates the energy of electron in spherical quantum dot and the heavy quarkonia (QQ-onia).

  10. Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier

    SciTech Connect (OSTI)

    Ip, Alexander H.; Labelle, André J.; Sargent, Edward H.

    2013-12-23

    Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells.

  11. Pulsed Electrical Spin Injection into InGaAs Quantum Dots: Studies of the Electroluminescence Polarization Dynamics

    SciTech Connect (OSTI)

    Asshoff, P.; Loeffler, W.; Fluegge, H.; Zimmer, J.; Mueller, J.; Westenfelder, B.; Hu, D. Z.; Schaadt, D. M.; Kalt, H.; Hetterich, M. [Institut fuer Angewandte Physik and DFG Center for Functional Nanostructures (CFN), Universitaet Karlsruhe, 76131 Karlsruhe (Germany)

    2010-01-04

    We present time-resolved studies of the spin polarization dynamics during and after initialization through pulsed electrical spin injection into InGaAs quantum dots embedded in a p-i-n-type spin-injection light-emitting diode. Experiments are performed with pulse widths in the nanosecond range and a time-resolved single photon counting setup is used to detect the subsequent electroluminescence. We find evidence that the achieved spin polarization shows an unexpected temporal behavior, attributed mainly to many-carrier and non-equilibrium effects in the device.

  12. Effective Landé factor in a GaMnAs quantum dot; with the effects of sp-d exchange on a bound polaron

    SciTech Connect (OSTI)

    Lalitha, D., E-mail: a.john.peter@gmail.com; Peter, A. John, E-mail: a.john.peter@gmail.com [Dept. of Physics, Government Arts College, Melur-625106, Tamilnadu (India)

    2014-04-24

    The effective g-factor of conduction (valence) band electron (hole) is obtained in the GaMnAs quantum dot. Magneto bound polaron in a GaMnAs/Ga{sub 0.6}Al{sub 0.4}As quantum dot is investigated with the inclusion of exchange interaction effects due to Mn alloy content and the geometrical confinement. The spin polaronic energy of the heavy hole exciton is studied with the spatial confinement using a mean field theory in the presence of magnetic field strength.

  13. Quantitative multiplex detection of biomarkers on a waveguide-based biosensor using quantum dots

    SciTech Connect (OSTI)

    Xie, Hongzhi; Mukundan, Harshini; Martinez, Jennifer S; Swanson, Basil I; Anderson, Aaron S; Grace, Kevin

    2009-01-01

    The quantitative, simultaneous detection of multiple biomarkers with high sensitivity and specificity is critical for biomedical diagnostics, drug discovery and biomarker characterization [Wilson 2006, Tok 2006, Straub 2005, Joos 2002, Jani 2000]. Detection systems relying on optical signal transduction are, in general, advantageous because they are fast, portable, inexpensive, sensitive, and have the potential for multiplex detection of analytes of interest. However, conventional immunoassays for the detection of biomarkers, such as the Enzyme Linked Immunosorbant Assays (ELISAs) are semi-quantitative, time consuming and insensitive. ELISA assays are also limited by high non-specific binding, especially when used with complex biological samples such as serum and urine (REF). Organic fluorophores that are commonly used in such applications lack photostability and possess a narrow Stoke's shift that makes simultaneous detection of multiple fluorophores with a single excitation source difficult, thereby restricting their use in multiplex assays. The above limitations with traditional assay platforms have resulted in the increased use of nanotechnology-based tools and techniques in the fields of medical imaging [ref], targeted drug delivery [Caruthers 2007, Liu 2007], and sensing [ref]. One such area of increasing interest is the use of semiconductor quantum dots (QDs) for biomedical research and diagnostics [Gao and Cui 2004, Voura 2004, Michalet 2005, Chan 2002, Jaiswal 2004, Gao 2005, Medintz 2005, So 2006 2006, Wu 2003]. Compared to organic dyes, QDs provide several advantages for use in immunoassay platforms, including broad absorption bands with high extinction coefficients, narrow and symmetric emission bands with high quantum yields, high photostablility, and a large Stokes shift [Michalet 2005, Gu 2002]. These features prompted the use of QDs as probes in biodetection [Michalet 2005, Medintz 2005]. For example, Jaiswal et al. reported long term multiple color imaging of live cells using QD-bioconjugates [Jaiswal 2003]. Gao [Gao 2004] and So [So 2006] have used QDs as probes for in-vivo cancer targeting and imaging. Medintz et al. reported self-assembled QD-based biosensors for detection of analytes based on energy transfer [Medintz 2003]. Others have developed an approach for multiplex optical encoding of biomolecules using QDs [Han 2001]. Immunoassays have also benefited from the advantages of QDs. Recently, dihydrolipoic acid (DHLA) capped-QDs have been attached to antibodies and used as fluorescence reporters in plate-based multiplex immunoassays [Goodman 2004]. However, DHLA-QDs are associated with low quantum efficiency and are unstable at neutral pH. These problems limit the application of this technology to the sensitive detection of biomolecules, especially in complex biological samples. Thus, the development of a rapid, sensitive, quantitative, and specific multiplex platform for the detection of biomarkers in difficult samples remains an elusive target. The goal stated above has applications in many fields including medical diagnostics, biological research, and threat reduction. The current decade alone has seen the development of a need to rapidly and accurately detect potential biological warfare agents. For example, current methods for the detection of anthrax are grossly inadequate for a variety of reasons including long incubation time (5 days from time of exposure to onset of symptoms) and non-specific ('flu-like') symptoms. When five employees of the United State Senate were exposed to B. anthracis in the mail (2001), only one patient had a confirmed diagnosis before death. Since then, sandwich immunoassays using both colorimetric and fluorescence detectors have been developed for key components of the anthrax lethal toxin, namely protective antigen (PA), lethal factor (LF), and the edema factor [Mourez 2001]. While these platforms were successful in assays against anthrax toxins, the sensitivity was poor. Furthermore, no single platform exists for the simultaneous and quantitative detection of mul

  14. Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

    SciTech Connect (OSTI)

    Himwas, C.; Songmuang, R.; Le Si Dang; Bleuse, J.; Monroy, E.; Rapenne, L.; Sarigiannidou, E.

    2012-12-10

    We report on the structural and optical properties of AlGaN/AlN quantum dot (QD) superlattices synthesized by plasma-assisted molecular-beam epitaxy. Modifying the composition and geometry of the QDs, the peak emission wavelength can be shifted from 320 nm to 235 nm while keeping the internal quantum efficiency larger than 30%. The efficient carrier confinement is confirmed by the stability of the photoluminescence (PL) intensity and decay time, from low temperature up to 100 K. Above this threshold, the PL intensity decreases and the radiative lifetime increases due to carrier thermalization. We also identified the intraband electronic transition between the ground level of the conduction band and the first excited state confined along the growth axis (s-p{sub z}).

  15. Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001)

    SciTech Connect (OSTI)

    Dupuy, E.; Regreny, P.; Robach, Y.; Gendry, M.; Chauvin, N.; Tranvouez, E.; Bremond, G.; Bru-Chevallier, C.; Patriarche, G.

    2006-09-18

    The authors report on a postgrowth method to obtain low density InAs/InP(001) quantum dots by solid-source molecular beam epitaxy. They used an approach based on the ripening of the InAs sticks, which is triggered by the sample cooling under arsenic overpressure, before InP capping. Atomic force microscopy images show the evolution of InAs islands from sticks oriented along the [1-10] direction to dot-shaped islands with a density that can be reduced to about 2x10{sup 9} dots/cm{sup 2}. Macro- and microphotoluminescence reveal that these diluted InAs dots exhibit a strong spatial confinement and emit in the 1.55 {mu}m range.

  16. Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

    SciTech Connect (OSTI)

    Dey, Anup; Maiti, Biswajit; Chanda, Debasree

    2014-04-14

    A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k{sup ?}) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg{sub 1?x}Cd{sub x}Te, and In{sub 1?x}Ga{sub x}As{sub y}P{sub 1?y} lattice matched to InP, as example of III–V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

  17. Quantum dot ternary-valued full-adder: Logic synthesis by a multiobjective design optimization based on a genetic algorithm

    SciTech Connect (OSTI)

    Klymenko, M. V.; Remacle, F., E-mail: fremacle@ulg.ac.be [Department of Chemistry, B6c, University of Liege, B4000 Liege (Belgium)

    2014-10-28

    A methodology is proposed for designing a low-energy consuming ternary-valued full adder based on a quantum dot (QD) electrostatically coupled with a single electron transistor operating as a charge sensor. The methodology is based on design optimization: the values of the physical parameters of the system required for implementing the logic operations are optimized using a multiobjective genetic algorithm. The searching space is determined by elements of the capacitance matrix describing the electrostatic couplings in the entire device. The objective functions are defined as the maximal absolute error over actual device logic outputs relative to the ideal truth tables for the sum and the carry-out in base 3. The logic units are implemented on the same device: a single dual-gate quantum dot and a charge sensor. Their physical parameters are optimized to compute either the sum or the carry out outputs and are compatible with current experimental capabilities. The outputs are encoded in the value of the electric current passing through the charge sensor, while the logic inputs are supplied by the voltage levels on the two gate electrodes attached to the QD. The complex logic ternary operations are directly implemented on an extremely simple device, characterized by small sizes and low-energy consumption compared to devices based on switching single-electron transistors. The design methodology is general and provides a rational approach for realizing non-switching logic operations on QD devices.

  18. Spin filtering in a double quantum dot device: Numerical renormalization group study of the internal structure of the Kondo state

    SciTech Connect (OSTI)

    Vernek, E.; Büsser, C. A.; Anda, E. V.; Feiguin, A. E.; Martins, G. B.

    2014-03-31

    A double quantum dot device, connected to two channels that only interact through interdot Coulomb repulsion, is analyzed using the numerical renormalization group technique. Using a two-impurity Anderson model, and realistic parameter values [S. Amasha, A. J. Keller, I. G. Rau, A. Carmi, J. A. Katine, H. Shtrikman, Y. Oreg, and D. Goldhaber-Gordon, Phys. Rev. Lett. 110, 046604 (2013)], it is shown that, by applying a moderate magnetic field and independently adjusting the gate potential of each quantum dot at half-filling, a spin-orbital SU(2) Kondo state can be achieved where the Kondo resonance originates from spatially separated parts of the device. Our results clearly link this spatial separation effect to currents with opposing spin polarizations in each channel, i.e., the device acts as a spin filter. In addition, an experimental probe of this polarization effect is suggested, pointing to the exciting possibility of experimentally probing the internal structure of an SU(2) Kondo state.

  19. INSTITUTE for QUANTUM STRUCTURES AND DEVICES

    E-Print Network [OSTI]

    Plotkin, Steven S.

    , and #12;the design and fabrication of quantum devices based on magnetic, quantum dot, and superconducting

  20. Mesoporous TiO2 beads for high efficiency CdS/ CdSe quantum dot co-sensitized solar cells

    E-Print Network [OSTI]

    Cao, Guozhong

    Mesoporous TiO2 beads for high efficiency CdS/ CdSe quantum dot co-sensitized solar cells Ru Zhou-sensitized solar cell (QDSC) application. The photoanode films were composed of submicrometer-sized beads consisting of packed TiO2 nanocrystallites. A power conversion efficiency up to 4.05% has been achieved

  1. SU(2) and SU(4) Kondo effects in carbon nanotube quantum dots A. Makarovski,1 A. Zhukov,1 J. Liu,2 and G. Finkelstein1

    E-Print Network [OSTI]

    Finkelstein, Gleb

    stays p-type "leads" . Therefore, a quantum dot is formed within a nanotube, de- fined by p-n and n-p junctions. As a result, a Coulomb blockade sets in at low temperatures Fig. 1 . Figure 1 shows conductance-n junction transparency grows with Vgate, resulting in an enhancement of the Kondo effect in each successive

  2. Numerical analysis of the quantum dots on o#normal incidence ion sputtered surfaces Emmanuel O. Yewande, # Reiner Kree, + and Alexander K. Hartmann #

    E-Print Network [OSTI]

    Peinke, Joachim

    The size­tunable atomic­like properties of (e.g. II­VI and III­V) semiconductor nanocrystals have diverse the same power­law scaling exponents of the dot characteristics for two di#erent sets of ion­material ap­ plications. These properties arise from the quantum con­ finement of electrons or holes

  3. The Quantum Energy Density: Improved E

    SciTech Connect (OSTI)

    Krogel, Jaron; Yu, Min; Kim, Jeongnim; Ceperley, David M.

    2013-01-01

    We establish a physically meaningful representation of a quantum energy density for use in Quantum Monte Carlo calculations. The energy density operator, dened in terms of Hamiltonian components and density operators, returns the correct Hamiltonian when integrated over a volume containing a cluster of particles. This property is demonstrated for a helium-neon \\gas," showing that atomic energies obtained from the energy density correspond to eigenvalues of isolated systems. The formation energies of defects or interfaces are typically calculated as total energy dierences. Using a model of delta-doped silicon (where dopant atoms form a thin plane) we show how interfacial energies can be calculated more eciently with the energy density, since the region of interest is small. We also demonstrate how the energy density correctly transitions to the bulk limit away from the interface where the correct energy is obtainable from a separate total energy calculation.

  4. The Quantum Energy Density: Improved Efficiency for Quantum Monte Carlo

    E-Print Network [OSTI]

    Krogel, Jaron T; Kim, Jeongnim; Ceperley, David M

    2013-01-01

    We establish a physically meaningful representation of a quantum energy density for use in Quantum Monte Carlo calculations. The energy density operator, defined in terms of Hamiltonian components and density operators, returns the correct Hamiltonian when integrated over a volume containing a cluster of particles. This property is demonstrated for a helium-neon "gas," showing that atomic energies obtained from the energy density correspond to eigenvalues of isolated systems. The formation energies of defects or interfaces are typically calculated as total energy differences. Using a model of delta-doped silicon (where dopant atoms form a thin plane) we show how interfacial energies can be calculated more efficiently with the energy density, since the region of interest is small. We also demonstrate how the energy density correctly transitions to the bulk limit away from the interface where the correct energy is obtainable from a separate total energy calculation.

  5. Ultrafast Population Switching of Quantum Dots in a Structured Vacuum Xun Ma and Sajeev John

    E-Print Network [OSTI]

    John, Sajeev

    optical pulses in a 3D photonic band gap waveguide. This is the result of giant Mollow splitting caused. In a 3D PBG material with suitable waveguide architectures, the coherent coupling of Q dots to an external field can be made several orders of magnitudes stronger [11,12]. Strong light localization in 3D

  6. Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering: A self-ordered quantum dot crystal

    SciTech Connect (OSTI)

    Sritirawisarn, N.; Otten, F. W. M. van; Eijkemans, T. J.; Noetzel, R.

    2008-09-29

    Multilayer-stacked linear InAs quantum dot (QD) arrays are created on InAs/InGaAsP superlattice templates formed by self-organized anisotropic strain engineering on InP (100) substrates in chemical beam epitaxy. Stacking of the QD arrays with identical emission wavelength in the 1.55 {mu}m region at room temperature is achieved through the insertion of ultrathin GaAs interlayers beneath the QDs with increasing interlayer thickness in successive layers. The increment in the GaAs interlayer thickness compensates the QD size/wavelength increase during strain correlated stacking. This is the demonstration of a three-dimensionally self-ordered QD crystal with fully controlled structural and optical properties.

  7. Improving Quantum Clocks via Semidefinite Programming

    E-Print Network [OSTI]

    Michael Mullan; Emanuel Knill

    2011-07-26

    The accuracies of modern quantum logic clocks have surpassed those of standard atomic fountain clocks. These clocks also provide a greater degree of control, because before and after clock queries, we are able to apply chosen unitary operations and measurements. Here, we take advantage of these choices and present a numerical technique designed to increase the accuracy of these clocks. We use a greedy approach, minimizing the phase variance of a noisy classical oscillator with respect to a perfect frequency standard after an interrogation step; we do not optimize over successive interrogations or the probe times. We consider arbitrary prior frequency knowledge and compare clocks with varying numbers of ions and queries interlaced with unitary control. Our technique is based on the semidefinite programming formulation of quantum query complexity, a method first developed in the context of deriving algorithmic lower bounds. The application of semidefinite programming to an inherently continuous problem like that considered here requires discretization; we derive bounds on the error introduced and show that it can be made suitably small.

  8. Intersubband absorption in CdSe/Zn{sub x}Cd{sub y}Mg{sub 1-x-y}Se self-assembled quantum dot multilayers

    SciTech Connect (OSTI)

    Shen, A.; Lu, H.; Charles, W.; Yokomizo, I.; Tamargo, M. C.; Franz, K. J.; Gmachl, C.; Zhang, S. K.; Zhou, X.; Alfano, R. R.; Liu, H. C.

    2007-02-12

    The authors report the observation of intersubband absorption in multilayers of CdSe/Zn{sub x}Cd{sub y}Mg{sub 1-x-y}Se self-assembled quantum dots. The samples were grown by molecular beam epitaxy on InP substrates. For samples with the CdSe dot layers doped with Cl and with the deposited CdSe equivalent layer thickness between 5.2 and 6.9 ML, peak absorption between 2.5 and 3.5 {mu}m was observed. These materials are promising for intersubband devices operating in the mid- and near-infrared ranges.

  9. Evidence of significant down-conversion in a Si-based solar cell using CuInS{sub 2}/ZnS core shell quantum dots

    SciTech Connect (OSTI)

    Gardelis, Spiros Nassiopoulou, Androula G.

    2014-05-05

    We report on the increase of up to 37.5% in conversion efficiency of a Si-based solar cell after deposition of light-emitting Cd-free, CuInS{sub 2}/ZnS core shell quantum dots on the active area of the cell due to the combined effect of down-conversion and the anti- reflecting property of the dots. We clearly distinguished the effect of down-conversion from anti-reflection and estimated an enhancement of up to 10.5% in the conversion efficiency due to down-conversion.

  10. Super-dense array of Ge quantum dots grown on Si(100) by low-temperature molecular beam epitaxy

    SciTech Connect (OSTI)

    Talochkin, A. B., E-mail: tal@isp.nsc.ru; Shklyaev, A. A. [A.V. Rzhanov Institute of Semiconductor Physics, Lavrentyev Avenue 13, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Mashanov, V. I. [A.V. Rzhanov Institute of Semiconductor Physics, Lavrentyev Avenue 13, Novosibirsk 630090 (Russian Federation)

    2014-04-14

    Ge layer grown on Si(100) at the low temperature of ?100?°C by molecular beam epitaxy is studied using scanning tunneling microscopy and Raman spectroscopy. It is found that crystalline and pseudomorphic to the Si substrate Ge islands are formed at the initial growth stage. The islands acquire the base size of 1.2–2.6?nm and they form arrays with the super-high density of (5–8)?×?10{sup 12}?cm{sup ?2} at 1–2?nm Ge coverages. Such a density is at least 10 times higher than that of Ge “hut” clusters grown via the Stranski-Krastanov growth mode. It is shown that areas between the crystalline Ge islands are filled with amorphous Ge, which is suggested to create potential barrier for holes localized within the islands. As a result, crystalline Ge quantum dots appear being isolated from each other.

  11. Influence of Gaussian white noise on the frequency-dependent first nonlinear polarizability of doped quantum dot

    SciTech Connect (OSTI)

    Ganguly, Jayanta; Ghosh, Manas

    2014-05-07

    We investigate the profiles of diagonal components of frequency-dependent first nonlinear (?{sub xxx} and ?{sub yyy}) optical response of repulsive impurity doped quantum dots. We have assumed a Gaussian function to represent the dopant impurity potential. This study primarily addresses the role of noise on the polarizability components. We have invoked Gaussian white noise consisting of additive and multiplicative characteristics (in Stratonovich sense). The doped system has been subjected to an oscillating electric field of given intensity, and the frequency-dependent first nonlinear polarizabilities are computed. The noise characteristics are manifested in an interesting way in the nonlinear polarizability components. In case of additive noise, the noise strength remains practically ineffective in influencing the optical responses. The situation completely changes with the replacement of additive noise by its multiplicative analog. The replacement enhances the nonlinear optical response dramatically and also causes their maximization at some typical value of noise strength that depends on oscillation frequency.

  12. Cascaded emission of linearly polarized single photons from positioned InP/GaInP quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Unsleber, S.; Baumann, V.; Schneider, C.; Höfling, S.; Kamp, M.; Gschrey, M.; Rodt, S.; Reitzenstein, S.

    2013-11-04

    We report on the optical characterization of site-controlled InP/GaInP quantum dots (QDs). Spatially resolved low temperature cathodoluminescence proves the long-range ordering of the buried emitters, revealing a yield of ?90% of optically active, positioned QDs and a strong suppression of emitters on interstitial positions. The emission of single QDs shows a pronounced degree of linear polarization along the [0,?1,1] crystal axis with an average degree of polarization of 94%. Photon correlation measurements of the emission from a single QD indicate the single-photon character of the exciton and biexciton emission lines as well as the cascaded nature of the photon pair.

  13. Regular and irregular dynamics of Dirac-Weyl wavepackets in a mesoscopic quantum dot at the edge of topological insulator

    E-Print Network [OSTI]

    D. V. Khomitsky; A. A. Chubanov; A. A. Konakov

    2015-01-06

    The dynamics of Dirac-Weyl spin-polarized wavepackets driven by periodic electric field is considered for the electrons in a mesoscopic quantum dot formed at the edge of two-dimensional HgTe/CdTe topological insulator with Dirac-Weyl massless energy spectra, where the motion of carriers is less sensitive to disorder and impurity potentials. It is found that the interplay of strongly coupled spin and charge degrees of freedom creates the regimes of both regular and irregular dynamics with certain universal properties manifested both in the clean limit and in the presence of the moderate disorder. The disorder influence is predicted to enhance the in-plane spin relaxation, leading to possibility of establishing novel types of driven evolution in nanostructures formed in the topological insulators.

  14. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  15. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  16. Blinking suppression of CdTe quantum dots on epitaxial graphene and the analysis with Marcus electron transfer

    SciTech Connect (OSTI)

    Hirose, Takuya; Tamai, Naoto, E-mail: tamai@kwansei.ac.jp [Department of Chemistry, School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337 (Japan); Kutsuma, Yasunori; Kurita, Atsusi; Kaneko, Tadaaki [Department of Physics, School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337 (Japan)

    2014-08-25

    We have prepared epitaxial graphene by a Si sublimation method from 4H-SiC. Single-particle spectroscopy of CdTe quantum dots (QDs) on epitaxial graphene covered with polyvinylpyrrolidone (PVP) or polyethylene glycol (PEG) showed the suppression of luminescence blinking and ?10 times decreased luminescence intensity as compared with those on a glass. The electronic coupling constant, H{sub 01}, between CdTe QDs and graphene was calculated to be (3.3?±?0.4)?×?10{sup 2?}cm{sup ?1} in PVP and (3.7?±?0.8)?×?10{sup 2?}cm{sup ?1} in PEG based on Marcus theory of electron transfer and Tang-Marcus model of blinking with statistical distribution.

  17. Characterization of electrospray ion-beam-deposited CdSe/ZnS quantum dot thin films from a colloidal solution

    SciTech Connect (OSTI)

    Tani, Yuki; Kobayashi, Satoshi; Kawazoe, Hiroshi

    2008-07-15

    Colloidal semiconductor quantum dot (QD) nanocrystals can be deposited in the form of inorganic thin films using the ion beam direct deposition method. To simultaneously preserve the nanocrystal configuration and remove the organics derived from the ligand and solvent, the authors used an electrospray technique and an ion beam technique. These techniques provided a soft-ionization process to obtain nanocrystalline ions and a collision process to attain a nonequilibrium state of the deposits, respectively. Because of the nature of the soft-ionization process, the electrospray phenomenon resulted in various forms of QD ions that depended on the preparation of the colloidal solution source and spraying conditions. The authors concentrated on finding operational conditions of the system that deposited thin films with reduced organics concentrations by examining the correlation between fast Fourier transform infrared absorption spectroscopy and photoluminescence intensity. The morphology of the deposited films was observed using an atomic force microscope.

  18. Covalent Coupling of Organophosphorus Hydrolase Loaded Quantum Dots to Carbon Nanotube/Au Nanocomposite for Enhanced Detection of Methyl Parathion

    SciTech Connect (OSTI)

    Du, Dan; Chen, Wenjuan; Zhang, Weiying; Liu, Deli; Li, Haibing; Lin, Yuehe

    2010-02-15

    An amperometric biosensor for highly selective and sensitive determination of methyl parathion (MP) was developed based on dual signal amplification: (1) a large amount of introduced enzyme on the electrode surface and (2) synergistic effects of nanoparticles towards enzymatic catalysis. The fabrication process includes (1) electrochemical deposition of gold nanoparticles by a multi-potential step technique at multiwalled carbon nanotube (MWCNT) film pre-cast on a glassy carbon electrode and (2) immobilization of methyl parathion degrading enzyme (MPDE) onto a modified electrode through CdTe quantum dots (CdTe QDs) covalent attachment. The introduced MWCNT and gold nanoparticles significantly increased the surface area and exhibited synergistic effects towards enzymatic catalysis. CdTe QDs are further used as carriers to load a large amount of enzyme. As a result of these two important enhancement factors, the proposed biosensor exhibited extremely sensitive, perfectly selective, and rapid response to methyl parathion in the absence of a mediator.

  19. Double capping of molecular beam epitaxy grown InAs/InP quantum dots studied by cross-sectional scanning tunneling microscopy

    SciTech Connect (OSTI)

    Ulloa, J. M.; Koenraad, P. M.; Gapihan, E.; Letoublon, A.; Bertru, N.

    2007-08-13

    Cross-sectional scanning tunneling microscopy was used to study at the atomic scale the double capping process of self-assembled InAs/InP quantum dots (QDs) grown by molecular beam epitaxy on a (311)B substrate. The thickness of the first capping layer is found to play a mayor role in determining the final results of the process. For first capping layers up to 3.5 nm, the height of the QDs correspond to the thickness of the first capping layer. Nevertheless, for thicknesses higher than 3.5 nm, a reduction in the dot height compared to the thickness of the first capping layer is observed. These results are interpreted in terms of a transition from a double capping to a classical capping process when the first capping layer is thick enough to completely cover the dots.

  20. Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H{sup ?}) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectors

    SciTech Connect (OSTI)

    Mandal, A.; Ghadi, H.; Mathur, K.L.; Basu, A.; Subrahmanyam, N.B.V.; Singh, P.; Chakrabarti, S.

    2013-08-01

    Graphical abstract: - Abstract: Here we propose a carrier transport mechanism for low energy H{sup ?} ions implanted InAs/GaAs quantum dot infrared photodetectors supportive of the experimental results obtained. Dark current density suppression of up to four orders was observed in the implanted quantum dot infrared photodetectors, which further demonstrates that they are effectively operational. We concentrated on determining how defect-related material and structural changes attributed to implantation helped in dark current density reduction for InAs/GaAs quantum dot infrared photodetectors. This is the first study to report the electrical carrier transport mechanism of H{sup ?} ion-implanted InAs/GaAs quantum dot infrared photodetectors.